Sample records for ev emission band
-
International Nuclear Information System (INIS)
Yoshida, Tomoko; Muto, Shunsuke; Yuliati, Leny; Yoshida, Hisao; Inada, Yasuhiro
2009-01-01
Correlation between the 3.1 eV emission band and local atomic configuration was systematically examined for Ge + implanted silica glass by UV-vis optical absorption spectroscopy and X-ray absorption fine structure (XAFS) analysis. The 2.7 eV emission band, commonly observed in defective silica, was replaced by the sharp and intense 3.1 eV emission band for the Ge + fluence > 2 x 10 16 cm -2 , in which UV-vis absorption spectra suggested clustering of Ge atoms with the size ∼1 nm. XAFS spectroscopy indicated that the Ge atoms were under coordinated with oxygen atoms nearly at a neutral valence state on average. The present results are consistent with the previous ESR study but imply that the small Ge clusters rather than the O=Ge: complexes (point defects) are responsible for the 3.1 eV emission band.
-
Extreme Ultraviolet Emission Spectrum of CO_2 Induced by Electron Impact at 200 eV
Kanik, I.; Ajello, J. M.; James, G. K.
1993-01-01
We present the extreme ultraviolet (EUV) emission spectrum of CO_2 induced by electronimpact at 200 eV. There are 36 spectral features which are identified with a resolution of 0.5 nmover the wavelength range of 40 to 125 nm. Absolute emission cross sections were obtained for eachof these features. The EUV emission spectrum induced by electron impact consist of atomicmultiplets of CI,II and OI,II,III as well as CO and CO^+ molecular band systems produced bydissociative excitation. The CI (119.4 nm) multiplet is the strongest feature of CI with a peak crosssection of 3.61 x 10^(-19) cm^2 at 200 eV. The strongest feature of OI in the EUV spectrum is theOI (99.0 nm) multiplet with a peak cross section of 3.59 x 10^(-19) cm^2 at 200 eV.
-
National Greenhouse Gas Emission Inventory (EV-GHG)
U.S. Environmental Protection Agency — The EV-GHG Mobile Source Data asset contains measured mobile source GHG emissions summary compliance information on light-duty vehicles, by model, for certification...
-
International Nuclear Information System (INIS)
Bandis, C.; Pate, B.B.
1995-01-01
We have recently reported that bound electron-hole pairs (Mott-Wannier excitons) are the dominant source of photoelectron emission from specially prepared [''as-polished'' C(111)-(1x1):H] negative-electron-affinity diamond surfaces for near-band-gap excitation up to 0.5 eV above threshold [C. Bandis and B. B. Pate, Phys. Rev. Lett. 74, 777 (1995)]. It was found that photoexcited excitons transport to the surface, break up, and emit their electron. In this paper, we extend the study of exciton-derived emission to include partial yield (constant final-state) analysis as well as angular distribution measurements of the photoelectric emission. In addition, we find that exciton-derived emission does not always dominate. Photoelectric emission properties of the in situ ''rehydrogenated'' (111)-(1x1):H diamond surface are characteristically different than emission observed from the as-polished (111)-(1x1):H surface. The rehydrogenated surface has additional downward band bending as compared to the as-polished surface. In confirmation of the assignment of photoelectric yield to exciton breakup emission, we find a significant enhancement of the total electron yield when the downward band bending of the hydrogenated surface is increased. The functional form of the observed total electron yield demonstrates that, in contrast to the as-polished surface, conduction-band electrons are a significant component of the observed photoelectric yield from the in situ hydrogenated (111)-(1x1):H surface. Furthermore, electron emission characteristics of the rehydrogenated surface confirms our assignment of a Fan phonon-cascade mechanism for thermalization of excitons
-
Properties of the 4.45 eV optical absorption band in LiF:Mg, Ti
International Nuclear Information System (INIS)
Nail, I.; Oster, L.; Horowitz, Y. S.; Biderman, S.; Belaish, Y.
2006-01-01
The optical absorption (OA) and thermoluminescence (TL) of dosimetric LiF:Mg,Ti (TLD-100) as well as nominally pure LiF single crystal have been studied as a function of irradiation dose, thermal and optical bleaching in order to investigate the role of the 4.45 eV OA band in low temperature TL. Computerised deconvolution was used to resolve the absorption spectrum into individual gaussian bands and the TL glow curve into glow peaks. Although the 4.45 eV OA band shows thermal decay characteristics similar to the 4.0 eV band its dose filling constant and optical bleaching properties suggest that it cannot be associated with the TL of composite peaks 4 or 5. Its presence in optical grade single crystal LiF further suggests that it is an intrinsic defect or possibly associated with chance impurities other than Mg, Ti. (authors)
-
Towards a meaningful metric for the quantification of GHG emissions of electric vehicles (EVs)
International Nuclear Information System (INIS)
Manjunath, Archana; Gross, George
2017-01-01
A key motivator for wider deployment of electric vehicles (EVs) – vehicles that are fully powered by battery charged from grid electricity – is to bring about environmental cleanliness. This goal is based on the fact that EVs produce zero tailpipe emissioon the associated carbon emissins. However, the generation and transmission of the charge electricity produce emissions that are not explicitly accounted by current measurement metrics for EV greenhouse gas (GHG) emissions and as such, the notion of environmental cleanliness of EVs becomes questionable. In this paper, we propose a comprehensive metric to quantify the actual environmental impacts of EVs. The new metric that we call the electric vehicle emissions index (EVEI) captures CO_2 emissions in the electricity production to consumption stages. Our metric is the first that provides transparency in the comparison of total emissions among various EV models, as well as in the side-by-side comparison of an EV with a gasoline vehicle (GV). Illustrative results indicate that the actual environmental impacts of an EV may show wide spatial variations and in some case, these impacts may be even greater than that of GV. Such insights that the EVEI provides may be useful in a wide range of applications, particularly in policy and incentive formulation. - Highlights: • We propose the Electric Vehicle Emission Index (EVEI) metric. • EVEI indicates the EV environmental impacts w.r.t gasoline vehicles (GVs). • Fuel economy and resource mix are the major contributors to emissions. • Results indicate EVs may prove to be dirtier than GVs in certain areas of usage. • Insights may prove to be valuable to policy and incentive formulation.
-
AlxGa1--xN/GaN band offsets determined by deep-level emission
International Nuclear Information System (INIS)
Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.
2001-01-01
We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics
-
Life-time resolved emission spectra in CdCl2 crystals
International Nuclear Information System (INIS)
Kawabata, S.; Nakagawa, H.; Kitaura, M.
2005-01-01
The emission spectrum of CdCl 2 is composed of ultraviolet (UV) and yellow (Y) bands peaking at 3.70 and 2.30 eV, respectively. In order to determine the initial states of the Y-luminescence, decay curves of the Y-emission were measured at 8K by varying emission energy in the range from 1.64 eV to 3.13 eV. The observed decay curves are composed of two or three exponential components. The values of lifetime for them were 900, 460 and 60 μs. The emission spectrum for each decay component, i.e., life-time resolved emission spectrum, was analyzed by the observed decay curves. The emission spectrum for the component of 460 μs lifetime exhibits a dominant band at 2.30 eV and a satellite band at 3.03 eV. The emission spectrum for the component of 60 μs lifetime is reproduced by the three Gaussian bands peaking at 2.21, 2.65 and 2.87 eV. For the component of 900 μs lifetime, only a single band appears at 1.73 eV. The origin of the emission bands in life-time resolved emission spectra is briefly discussed, and the initial states of Y-luminescence are explained by the excited states of a [Cd 2+ Cl - 6 ] 4- complex molecular ion. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
-
Defect studies in quartz: Composite nature of the blue and UV emissions
Energy Technology Data Exchange (ETDEWEB)
Martini, Marco, E-mail: m.martini@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via R. Cozzi 55, I-20125 Milano (Italy); INFN, Sezione di Milano Bicocca, Piazza della Scienza 1, I-20126 Milano (Italy); Fasoli, Mauro; Villa, Irene [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via R. Cozzi 55, I-20125 Milano (Italy)
2014-05-01
Quartz is an extremely diffused natural luminescence dosimeter. Thanks to the presence of traps and luminescence centres, its TSL and OSL (Thermally and Optically Stimulated Luminescence) properties have been extensively exploited. Quartz is then used for archaeological and geological dating and is one of the most useful materials for accident dosimetry. Many luminescence emissions are known to be present in the OSL and TSL of quartz. Three main emission bands are always reported, as the red, blue and UV bands, centred at around 650, 470, and 360–380 nm, respectively. Although the assignment of the luminescence emissions to specific defect centres in quartz is still undefined, a thorough analysis of the radioluminescence emissions and their response to irradiation and thermal treatments turned out to be very useful in understanding many features. Specifically, the presence of the same emission bands in natural and synthetic quartz and their dependence on the presence of extrinsic impurities is a common characteristic. The main impurities involve Al ions substituting Si ones and charge compensated by nearby either alkali ions, H{sup +}, or a hole. The emission spectra dynamics evidenced in our experiment confirm the role of Al-related centres in the luminescence properties of quartz. From the measurements presented in this paper the composite nature of the “blue” emission is confirmed. Two bands labelled as A at 2.5 eV and B at 2.8 eV contribute to the emission in this region, their behaviour being different as a function of irradiation. More complex is the picture in the UV region, where, besides the already detected C and D bands at 3.4 eV and 3.9 eV, respectively, two further emissions have been detected at 3.1 eV and 3.7 eV. Despite both the 3.4 eV and the 3.7 eV bands are shown to be affected by thermal treatments, the annealing temperature dependence of their intensity is markedly different. In fact, whereas the C band intensity, at 3.4 eV, increases
-
Defect studies in quartz: Composite nature of the blue and UV emissions
International Nuclear Information System (INIS)
Martini, Marco; Fasoli, Mauro; Villa, Irene
2014-01-01
Quartz is an extremely diffused natural luminescence dosimeter. Thanks to the presence of traps and luminescence centres, its TSL and OSL (Thermally and Optically Stimulated Luminescence) properties have been extensively exploited. Quartz is then used for archaeological and geological dating and is one of the most useful materials for accident dosimetry. Many luminescence emissions are known to be present in the OSL and TSL of quartz. Three main emission bands are always reported, as the red, blue and UV bands, centred at around 650, 470, and 360–380 nm, respectively. Although the assignment of the luminescence emissions to specific defect centres in quartz is still undefined, a thorough analysis of the radioluminescence emissions and their response to irradiation and thermal treatments turned out to be very useful in understanding many features. Specifically, the presence of the same emission bands in natural and synthetic quartz and their dependence on the presence of extrinsic impurities is a common characteristic. The main impurities involve Al ions substituting Si ones and charge compensated by nearby either alkali ions, H + , or a hole. The emission spectra dynamics evidenced in our experiment confirm the role of Al-related centres in the luminescence properties of quartz. From the measurements presented in this paper the composite nature of the “blue” emission is confirmed. Two bands labelled as A at 2.5 eV and B at 2.8 eV contribute to the emission in this region, their behaviour being different as a function of irradiation. More complex is the picture in the UV region, where, besides the already detected C and D bands at 3.4 eV and 3.9 eV, respectively, two further emissions have been detected at 3.1 eV and 3.7 eV. Despite both the 3.4 eV and the 3.7 eV bands are shown to be affected by thermal treatments, the annealing temperature dependence of their intensity is markedly different. In fact, whereas the C band intensity, at 3.4 eV, increases after
-
Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra
2018-04-01
We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.
-
Photoluminescence measurements of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As
International Nuclear Information System (INIS)
Furtado, M.T.; Weid, J.P. von der.
1984-01-01
The photoluminescence of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As, with x=0.30-0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with (h/2π)ω sub(q) approx. 35 + - 2 meV and (h/2π) ω sub(q) approx. 45 + - 2 meV are found for the optical band, yielding a zero phonon transition energy - 1.73 + - 0.02 eV and a Franck-Condon shift approx. 0.17-0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17 + - 0.04 eV. Possible mechanisms for the radiative transitions are discussed. (Author) [pt
-
Life-time resolved emission spectra in CdI2 crystals
International Nuclear Information System (INIS)
Kawabata, Seiji; Nakagawa, Hideyuki
2007-01-01
The emission spectrum of CdI 2 is composed of ultraviolet (UV), green (G) and yellow (Y and Y') bands peaking at 3.38, 2.50, 2.16 and 2.25 eV, respectively. In order to determine the initial states of the Y- and G-luminescence, decay curves have been measured at 6 and 80 K by varying emission energy. The observed decay curves are composed of two or three exponential components. These decay components were named τ 1 , τ 2 , τ 3 , τ 3' and τ 4 . The emission spectrum for each decay component, i.e., the life-time resolved emission spectrum, was constructed from the observed decay curves. At 6 K, three bands at 2.12, 2.49 and 2.64 eV are obtained for τ 1 , τ 2 and τ 3 components, respectively. At 80 K, a dominant band for the τ 4 component and a weak band for the τ 3' component appear on the same energy position at 2.25 eV. The origin of each emission band in the life-time resolved emission spectra will be briefly discussed
-
Energy Technology Data Exchange (ETDEWEB)
Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.
2017-07-15
Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very
-
Energy Technology Data Exchange (ETDEWEB)
Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra
2018-03-01
We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.
-
International Nuclear Information System (INIS)
Linganiso, Ella Cebisa; Mhlanga, Sabelo Dalton; Coville, Neil John; Mwakikunga, Bonex Wakufwa
2013-01-01
Graphical abstract: Unexpected ultra-violet (UV) emission as well as near infra-red (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions due to the smaller crystallite size of the capped NiS 2 nanostructures was also observed. Band energy and local density of states calculation for NiS 2 were used to support the experimentally observed luminescence results. The luminescence features at wavelengths of 400 nm (3.10 eV), 428 nm (2.90 eV), 447 nm (2.77 eV) and 464 nm (2.67) can be attributed to some of those electrons de-exciting from S (3p) levels down to the Ni (3d) (blue to UV emission) whereas those features at wavelengths of 710 nm (1.75 eV), 751 nm (1.65 eV), 754 nm (1.64 eV) [NiS 2 /HDA-capped NiS 2 ] and 784 nm (1.58 eV) respectively seem to result from de-excitations between either Ni(3d) or S (3s, 3p) levels and Ni–S hybridization levels (red to near IR emission). Highlights: ► Rapid solid state alloying of Ni and S from their liquid state precursor by microwaves. ► New photoluminescence data of NiS 2 system. ► Unexpected luminescence in the UV–Visible and near IR ranges for such a metal matrix alloy. ► Explanation of NiS 2 photoluminescence from ab initio calculations by electronic energy band structure and density of states. -- Abstract: Synthesis of nickel disulfide (NiS 2 ) nano-alloys capped and uncapped with hexadecylamine (HDA) was carried out. A cubic phase NiS 2 formation was confirmed by X-ray diffraction (XRD) analysis. An average crystallite size of 35 nm was obtained for the uncapped nanostructures and 9 nm was obtained for the capped nanostructures estimated using the Scherrer equation. Unexpected ultra-violet (UV) emission as well as near infrared (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions
-
Energy Technology Data Exchange (ETDEWEB)
Linganiso, Ella Cebisa [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mhlanga, Sabelo Dalton; Coville, Neil John [Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050 (South Africa); Mwakikunga, Bonex Wakufwa, E-mail: bmwakikunga@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001 (South Africa); Department of Physics and Biochemical Sciences, University of Malawi, The Polytechnic, Private Bag 303, Chichiri, Blantyre 3 (Malawi)
2013-03-05
Graphical abstract: Unexpected ultra-violet (UV) emission as well as near infra-red (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material. Enhanced UV and near IR PL emissions due to the smaller crystallite size of the capped NiS{sub 2} nanostructures was also observed. Band energy and local density of states calculation for NiS{sub 2} were used to support the experimentally observed luminescence results. The luminescence features at wavelengths of 400 nm (3.10 eV), 428 nm (2.90 eV), 447 nm (2.77 eV) and 464 nm (2.67) can be attributed to some of those electrons de-exciting from S (3p) levels down to the Ni (3d) (blue to UV emission) whereas those features at wavelengths of 710 nm (1.75 eV), 751 nm (1.65 eV), 754 nm (1.64 eV) [NiS{sub 2}/HDA-capped NiS{sub 2}] and 784 nm (1.58 eV) respectively seem to result from de-excitations between either Ni(3d) or S (3s, 3p) levels and Ni–S hybridization levels (red to near IR emission). Highlights: ► Rapid solid state alloying of Ni and S from their liquid state precursor by microwaves. ► New photoluminescence data of NiS{sub 2} system. ► Unexpected luminescence in the UV–Visible and near IR ranges for such a metal matrix alloy. ► Explanation of NiS{sub 2} photoluminescence from ab initio calculations by electronic energy band structure and density of states. -- Abstract: Synthesis of nickel disulfide (NiS{sub 2}) nano-alloys capped and uncapped with hexadecylamine (HDA) was carried out. A cubic phase NiS{sub 2} formation was confirmed by X-ray diffraction (XRD) analysis. An average crystallite size of 35 nm was obtained for the uncapped nanostructures and 9 nm was obtained for the capped nanostructures estimated using the Scherrer equation. Unexpected ultra-violet (UV) emission as well as near infrared (IR) emissions were attributed to intra-band energy state transitions that occur as a result of the porous structure of the material
-
The performance of DC restoration function for MODIS thermal emissive bands
Wang, Zhipeng; Xiong, Xiaoxiong Jack; Shrestha, Ashish
2017-09-01
The DC restore (DCR) process of MODIS instrument maintains the output of a detector at focal plane assembly (FPA) within the dynamic range of subsequent analog-to-digital converter, by adding a specific offset voltage to the output. The DCR offset value is adjusted per scan, based on the comparison of the detector response in digital number (DN) collected from the blackbody (BB) view with target DN saved as an on-board look-up table. In this work, the MODIS DCR mechanism is revisited, with the trends of DCR offset being provided for thermal emissive bands (TEB). Noticeable changes have been occasionally found which coincide with significant detector gain change due to various instrumental events such as safe-mode anomaly or FPA temperature fluctuation. In general, MODIS DCR functionality has been effective and the change of DCR offset has no impact to the quality of MODIS data. One exception is the Earth view (EV) data saturation of Aqua MODIS LWIR bands 33, 35 ad 36 during BB warm-up cool-down (WUCD) cycle which has been observed since 2008. The BB view of their detectors saturate when the BB temperature is above certain threshold so the DCR cannot work as designed. Therefore, the dark signal DN fluctuates with the cold FPA (CFPA) temperature and saturate for a few hours per WUCD cycle, which also saturate the EV data sector within the scan. The CFPA temperature fluctuation peaked in 2012 and has been reduced in recent years and the saturation phenomenon has been easing accordingly. This study demonstrates the importance of DCR to data generation.
-
Point-Defect Nature of the Ultraviolet Absorption Band in AlN
Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.
2018-05-01
We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.
-
Spectroscopic study of emission coal mineral plasma produced by laser ablation
International Nuclear Information System (INIS)
Vera, L P; Pérez, J A; Riascos, H
2014-01-01
Spectroscopic analysis of plasma produced by laser ablation of coal samples using 1064 nm radiation pulses from a Q-switched Nd:YAG on different target under air ambient, was performed. The emission of molecular band systems such as C 2 Swan System (d 3 Π g →a 3 Π u ), the First Negative System N 2 (Band head at 501,53 nm) and emission lines of the C I, C II, were investigated using the optical emission spectroscopy technique. The C 2 molecular spectra (Swan band) were analyzed to determine vibrational temperature (0,62 eV); the density and electron temperature of the plasma have been evaluated using Stark broadening and the intensity of the nitrogen emission lines N II, the found values of 1,2 eV and 2,2 x10 18 cm −3 respectively.
-
Energy Technology Data Exchange (ETDEWEB)
Tyagi, Pankaj, E-mail: pankajtyagicicdu@gmail.com
2017-04-01
Thermally evaporated stoichiometric films of red HgI{sub 2} show preferred orientation growth with either (102) or (002) orientation. The as grown films shows a change from one preferred orientation to another depending on their thickness, open-air heat-treatment and in-situ heat treatment of films. The in-situ heat-treatment of thermally evaporated stoichiometric films of red HgI{sub 2} with preferred growth of (102) orientation shows a gradual linear decrease in film thickness with in-situ heat-treatment temperature. On in-situ heat-treatment above 80 °C, it is found that HgI{sub 2} films become thinner than 900 nm, which are otherwise difficult to grow due to high vapor pressure of HgI{sub 2}. For these films the preferred orientation also changed from (102) to (002). The optical band gap (E{sub g}) also found to increase linearly with in-situ heat-treatment temperature. It is interesting to note that in-situ heat-treated films having (002) orientation had higher values of optical band gap than (102) orientation films. On combining these results with those of as grown and open-air heat-treated red HgI{sub 2} films reported in the literature, it is evident that there exists an optical band gap demarcation around 2.15 eV for red HgI{sub 2} thin films depending on their preferred orientation growth. Films with (102) orientation are found to have optical band gap less than 2.15 eV and those with (002) orientation are found to have optical band gap more than 2.15 eV. This is irrespective of the physical mean of obtaining the preferred orientation. The preferred orientation can be achieved by either physical means such as growing films with higher thickness, heat-treating them for short duration in open air or heat-treating them in-situ.
-
The infrared emission bands. III. Southern IRAS sources.
Cohen, M; Tielens, A G; Bregman, J; Witteborn, F C; Rank, D M; Allamandola, L J; Wooden, D H; de Muizon, M
1989-06-01
We present airborne 5-8 micrometers spectra of southern IRAS sources which reveal strong polycyclic aromatic hydrocarbon (PAH) emission features. The good correlation between the bands, in particular the dominant 6.2 and "7.7" micrometers features, strongly imply a common carrier, reinforcing the PAH hypothesis. However, small but detectable spectral variations exist. Planetaries have a distinctly different ratio of I(6.2)/I(7.7) than other nebulae, accompanied by a redward shift in the actual wavelength of the "7.7" micrometers peak. Further, we have detected a new feature, previously predicted from laboratory spectra of PAH molecules, at 5.2 micrometers in many of these sources. Spectra of two rare [WC 10] planetary nebular nuclei indicate a very prominent plateau of emission, linking the 6.2 and 7.7 micrometers bands. Several of our sources show definite evidence for emission structure between 14 and 23 micrometers in their IRAS Low-Resolution Spectral Atlas spectra: we attribute this structure to PAH bands. too. We have defined the "generic" spectrum of emission bands relating the mean intensities of each band to that of the strongest, near 7.7 micrometers. We have added three more planetary or protoplanetary nebulae to our correlation between 7.7 micrometers band intensity and nebular gas phase C/O ratio, namely NGC 6302, HR 4049, and the highly carbon-rich [WC 10] nucleus, CPD--56 degrees 8032. For the latter we have determined a ratio for C/O of approximately 4.8 from IUE observations. The good correlation between the intensity ratio of the "7.7" micrometers feature relative to the far-infrared dust continuum and nebular C/O also supports a carbonaceous carrier for these emission features.
-
Spectroscopic analysis of coal plasma emission produced by laser ablation
Vera-Londoño, Liliana Patricia; Pérez-Taborda, Jaime Andrés; Riascos-Landázuri, Henry
2016-01-01
An analysis of plasma produced by laser ablation using 1,064 nm of laser radiation from a Q-switched Nd:YAG on coal mineral samples under air ambient, was performed. The emission of molecular band systems such as C2 Swan System , the First Negative System N2 (Band head at 501.53 nm) and different emission lines were investigated using the optical emission spectroscopy technique. The C2 molecular spectra (Swan band) were analyzed to determine vibrational temperature (0.62 eV). The density and ...
-
International Nuclear Information System (INIS)
Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki
2002-01-01
We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively
-
Photoelectron Emission Studies in CsBr at 257 nm
International Nuclear Information System (INIS)
Maldonado, Juan R.; Liu, Zhi; Sun, Yun; Pianetta, Piero A.; Pease, Fabian W.
2006-01-01
CsBr/Cr photocathodes were found [1,2] to meet the requirements of a multi-electron beam lithography system operating with a light energy of 4.8 eV (257nm). The fact that photoemission was observed with a light energy below the reported 7.3 eV band gap for CsBr was not understood. This paper presents experimental results on the presence of intra-band gap absorption sites (IBAS) in CsBr thin film photo electron emitters, and presents a model based on IBAS to explain the observed photoelectron emission behavior at energies below band gap. A fluorescence band centered at 330 nm with a FWHM of about 0.34 eV was observed in CsBr/Cr samples under 257 nm laser illumination which can be attributed to IBAS and agrees well with previously obtained synchrotron photoelectron spectra[1] from the valence band of CsBr films
-
Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters.
Huang, Zhizhen; Huang, Yifeng; Xu, Ningsheng; Chen, Jun; She, Juncong; Deng, Shaozhi
2018-06-13
Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.
-
International Nuclear Information System (INIS)
Ohkura, H.; Carmo, L.C.S. do; Kalinowski, H.J.; Ribeiro, S.C.
1976-01-01
The emission spectrum of F centers in KCN is reported. The temperature dependence of this emission between 62 K and 178K was measured and the energy gap between the relaxed excited state and conduction band could be determined as 070 eV. Below the antiferroelectric transition temperature at 83K a blue shift in the peak of the emission spectrum is observed due partially to the internal Stark effect
-
Chao, Y; Houlton, A; Horrocks, BR; Hunt, MRC; Poolton, NRJ; Yang, J; Šiller, L
2006-01-01
The origin and stability of luminescence are critical issues for Si nanocrystals which are intended for use as biological probes. The optical luminescence of alkyl-monolayer-passivated silicon nanocrystals was studied under excitation with vacuum ultraviolet photons (5.1–23 eV). Blue and orange emission bands were observed simultaneously, but the blue band only appeared at low temperatures (8.7 eV). At 8 K, the peak wavelengths of the emission bands were 430±2 nm (blue) and 600±2 nm (orange)....
-
Optical emission of InAs nanowires
International Nuclear Information System (INIS)
Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F
2012-01-01
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)
-
Optical emission of InAs nanowires
Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.
2012-09-01
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.
-
Directory of Open Access Journals (Sweden)
K. Piskorski
2018-05-01
Full Text Available We report on the advantages of using Graphene-Insulator-Semiconductor (GIS instead of Metal-Insulator-Semiconductor (MIS structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I. Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.
-
Piskorski, K.; Passi, V.; Ruhkopf, J.; Lemme, M. C.; Przewlocki, H. M.
2018-05-01
We report on the advantages of using Graphene-Insulator-Semiconductor (GIS) instead of Metal-Insulator-Semiconductor (MIS) structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I). Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I) = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.
-
Directory of Open Access Journals (Sweden)
Sung Heo
2015-07-01
Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.
-
DISCOVERY OF SiO BAND EMISSION FROM GALACTIC B[e] SUPERGIANTS
Energy Technology Data Exchange (ETDEWEB)
Kraus, M. [Astronomický ústav, Akademie věd České republiky, Fričova 298, 251 65 Ondřejov (Czech Republic); Oksala, M. E. [LESIA, Observatoire de Paris, CNRS UMR 8109, UPMC, Université Paris Diderot, 5 place Jules Janssen, F-92190, Meudon (France); Cidale, L. S.; Arias, M. L.; Torres, A. F. [Departamento de Espectroscopía Estelar, Facultad de Ciencias Astronómicas y Geofísicas, Universidad Nacional de La Plata (Argentina); Fernandes, M. Borges, E-mail: michaela.kraus@asu.cas.cz [Observatório Nacional, Rua General José Cristino 77, 20921-400 São Cristovão, Rio de Janeiro (Brazil)
2015-02-20
B[e] supergiants (B[e]SGs) are evolved massive stars in a short-lived transition phase. During this phase, these objects eject large amounts of material, which accumulate in a circumstellar disk-like structure. The expelled material is typically dense and cool, providing the cradle for molecule and dust condensation and for a rich, ongoing chemistry. Very little is known about the chemical composition of these disks, beyond the emission from dust and CO revolving around the star on Keplerian orbits. As massive stars preserve an oxygen-rich surface composition throughout their life, other oxygen-based molecules can be expected to form. As SiO is the second most stable oxygen compound, we initiated an observing campaign to search for first-overtone SiO emission bands. We obtained high-resolution near-infrared L-band spectra for a sample of Galactic B[e]SGs with reported CO band emission. We clearly detect emission from the SiO first-overtone bands in CPD-52 9243 and indications for faint emission in HD 62623, HD 327083, and CPD-57 2874. From model fits, we find that in all these stars the SiO bands are rotationally broadened with a velocity lower than observed in the CO band forming regions, suggesting that SiO forms at larger distances from the star. Hence, searching for and analyzing these bands is crucial for studying the structure and kinematics of circumstellar disks, because they trace complementary regions to the CO band formation zone. Moreover, since SiO molecules are the building blocks for silicate dust, their study might provide insight in the early stage of dust formation.
-
Search for relation between flares and photometric variability outside of flares in EV Lac
International Nuclear Information System (INIS)
Rojzman, G.Sh.
1984-01-01
The observations of the flare star EV Lac in July-September 1981 have confirmed the existence of photometric variability outside the flares during the night. It was found that, as a rule, a slow increase of brightness in U and B bands during 1-2 hours preceded the flares. It is suggested that the variability outside the flares is the result of the variability of chpomospheric emission lines and continuum that are emitted by the chromospheric preflare formations
-
Sıdır, İsa
2017-10-01
Six new low-band-gap copolymers of donor-donor-acceptor (D-D-A) architecture have been designed using density functional theory and time-dependent density functional theory methods in order to use them in organic photovoltaic cell (OPVC). Phenanthro[3,4-d:9,10-d‧]bis([1,2,3]thiadiazole)-10,12-dicarbonitrile moiety has been used as an acceptor for all compounds. We insert benzo[1,2-b:4,5-b‧]dithiophene and N,N-diphenylbenzo[1,2-b:4,5-b‧]dithiophen-2-amine units as donor to complete designing of copolymers. In order to tuning the optical and electronic properties, we have modified the donor unit by substituted with amine, methoxyamine, N-methylenethiophen-2-amine, methoxy, alkoxy moieties. The band gap (Eg), HOMO and LUMO values and plots, open circuit voltage (VOC) as well as optical properties have been analysed for designed copolymers. The optimised copolymers exhibit low-band-gap lying in the range of 1.03-2.24 eV. DPTD-6 copolymer presents the optimal properties to be used as an active layer due to its low Eg (1.03 eV) and a moderate VOC (0.56 eV). Thus, OPVC based on this copolymer in bulk-heterojunction composites with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as an acceptor has been modelled. Eg and VOC values of composite material DPTD-6:PCBM are found as 1.32 and 0.65 eV, respectively. A model band diagram has been established for OPVC, simulating the energy transfer between active layers.
-
U.S. Environmental Protection Agency — The EV-GHG Mobile Source Data asset contains measured mobile source GHG emissions summary compliance information on light-duty vehicles, by model, for certification...
-
Anisotropic emission of the X-ray K-emission band of nitrogen in hexagonal boron nitride
International Nuclear Information System (INIS)
Tegeler, E.; Kosuch, N.; Wiech, G.; Faessler, A.
1977-05-01
The intensity distribution of the N K-emission band of hexagonal boron nitride samples with partially orientated crystallites was found to be strongly dependent upon the take-off angle of the emitted radiation. The observed emission bands can be separated unambiguously into a sigma- and a π-subband. On the basis of the directional characteristic of radiating dipoles within the layers (sigma-bondings) and perpendicular to the layers (π-bonding) the angular dependence of the intensity of the subbands is quantitatively explained. In addition the degree of orientation of the crystallites on the sample can be determined. The intensity distributions of the emission bands to be expected for single crystals and for samples without any texture are determined; in the latter case the results are found to be in good agreement with experimental results. (orig.) [de
-
Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Powders
Everitt, Henry
2013-03-01
Bulk Zinc Oxide (ZnO) is a wide band gap semiconductor with an ultraviolet direct band gap energy of 3.4 eV and a broad, defect-related visible wavelength emission band centered near 2 eV. We have shown that the external quantum efficiency can exceed 50% for this nearly white emission band that closely matches the human dark-adapted visual response. To explore the potential of ZnO as a rare earth-free white light phosphor, we investigated the mechanism of efficient defect emission in three types of ZnO powders: unannealed, annealed, and sulfur-doped. Annealing and sulfur-doping of ZnO greatly increase the strength of defect emission while suppressing the UV band edge emission. Continuous wave and ultrafast one- and two-photon excitation spectroscopy are used to examine the defect emission mechanism. Low temperature photoluminescence (PL) and PL excitation (PLE) spectra were measured for all three compounds, and it was found that bound excitons mediate the defect emission. Temperature-dependent PLE spectra for the defect and band edge emission were measured to estimate trapping and activation energies of the bound excitons and clarify the role they play in the defect emission. Time-resolved techniques were used to ascertain the role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and non-radiative traps. In unannealed ZnO we find that defect emission is suppressed and UV band edge emission is inefficient (reduced, and a high density of defects responsible for the broad visible emission are created near the surface. Interestingly, nearly identical PLE spectra are found for both the band edge and the defect emission, one of many indications that the defect emission is deeply connected to bound excitons. Quantum efficiency, also measured as a function of excitation wavelength, closely mirrors the PLE spectra for both emission bands. Sulfur-doped ZnO exhibits additional PLE and X-ray features indicative of a ZnS-rich surface
-
Nature of the emission band of Dergaon meteorite in the region ...
Indian Academy of Sciences (India)
available colour film is used to photograph the spectrum. 3. Results and discussion. Figure 1 demonstrates the general feature of the emission band system in the region. 5700–6700 Å along with the Ar+ lasing line at 5145 Å. The emission band system and its densitometer tracing as shown in figure 2 indicate the diffuse ...
-
Origin of Spectral Band Patterns in the Cosmic Unidentified Infrared Emission
Álvaro Galué, Héctor; Díaz Leines, Grisell
2017-10-01
The cosmic unidentified infrared emission (UIE) band phenomenon is generally considered as indicative of free-flying polycyclic aromatic hydrocarbon molecules in space. However, a coherent explanation of emission spectral band patterns depending on astrophysical source is yet to be resolved under this attribution. Meanwhile astronomers have restored the alternative origin as due to amorphous carbon particles, but assigning spectral patterns to specific structural elements of particles is equally challenging. Here we report a physical principle in which inclusion of nonplanar structural defects in aromatic core molecular structures (π domains) induces spectral patterns typical of the phenomenon. We show that defects in model π domains modulate the electronic-vibration coupling that activates the delocalized π -electron contribution to aromatic vibrational modes. The modulation naturally disperses C =C stretch modes in band patterns that readily resemble the UIE bands in the elusive 6 - 9 μ m range. The electron-vibration interaction mechanics governing the defect-induced band patterns underscores the importance of π delocalization in the emergence of UIE bands. We discuss the global UIE band regularity of this range as compatible with an emission from the delocalized s p2 phase, as π domains, confined in disordered carbon mixed-phase aggregates.
-
The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction
Energy Technology Data Exchange (ETDEWEB)
Li, Yapeng, E-mail: liyp1984@126.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); Li, Yingfeng [School of Electrical Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); Wang, Jianyuan [School of Nature and Applied Science, Northwestern Polytechnical University, Xi' an 710072 (China); He, Zhirong; Zhang, Yonghong; Yu, Qi; Hou, Juncai [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723001 (China)
2017-05-15
Highlights: • The carrier transport deviated from ideal thermionic emission model. • One deep level present at the interface of ZnO/n-Si(111) heterojunction. • The band offsets of ZnO/n-Si(111) heterojunction are a type-II band alignment. - Abstract: The ZnO films were deposited on the surface of n-Si(111) substrate by pulsed laser deposition for fabrication of ZnO/n-Si(111) heterojunction. The carrier transport mechanism, deep level defects and band offsets at the interface of ZnO/n-Si(111) heterojunction were investigated by current- voltage measurement, deep level transient spectroscopy, X-ray photoelectron spectroscopy, respectively. The results showed that the barrier height and ideality factor values varied in the different linear voltage range by using the thermionic emission model, which was due to the deep level participated in carrier transport. Meanwhile, it was found that one deep level appeared at the interface of ZnO/n-Si(111) heterojunction with densities of the deep level about 8.5 × 10{sup 16} cm{sup −3} and activation energies about 224 m eV, which originated from O{sup 2−} vacancies of ZnO films. In addition, the valence band offset of the ZnO/n-Si(111) heterojunction can be calculated to be −2.4 ± 0.15 eV. The conduction band offset is deduced to be −3.5 ± 0.15 eV from the valence band offset value, indicating that the band offsets of ZnO/n-Si(111) heterojunction is a type-II band alignment.
-
Optical properties of CuSe thin films - band gap determination
Directory of Open Access Journals (Sweden)
Petrović Milica
2017-01-01
Full Text Available Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III45003
-
Tunneling emission of electrons from semiconductors' valence bands in high electric fields
International Nuclear Information System (INIS)
Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.
2006-01-01
Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band
-
Study on the economic and environmental benefits of different EV powertrain topologies
International Nuclear Information System (INIS)
Wang, Bin; Xu, Min; Yang, Li
2014-01-01
Highlights: • EV powertrain topologies can be realized by flexible distributed electric motors. • Model-based design optimization method is used to analyze and evaluate the EV. • The wheel-hub drive with reducer possesses the most competitive advantages. • US06 and NYCC result in the deterioration of EVs’ cost and GHG emissions. - Abstract: Numerous feasible schemes of powertrain topology can be designed for the electric vehicles (EVs) based on the distributed configurations of the electric motors. In this study, the effects of different EV powertrain topologies on the energy efficiency, vehicle ownership cost and lifecycle greenhouse gas (GHG) emissions of EVs are investigated. Energy-based vehicle simulation model including the regenerative braking function and battery degradation prediction method is established firstly. An optimization scheme combining the energy-based vehicle simulation model is conducted to minimize the electric energy consumption under various scenarios and driving conditions. Then the vehicle ownership cost and lifecycle GHG emissions of EVs are evaluated based on Chinese EV market and electricity grid. The sensitivity analyses of EV powertrain topology are implemented based on the different vehicle weights, CO 2 intensities of electricity and all-electric ranges. Results show that EVs using the powertrain of wheel-hub drive with the gear reducer have lower energy consumption. Furthermore, the driving cycles with more aggressive acceleration/deceleration and frequently stop-and-go conditions can increase both the vehicle ownership cost and lifecycle GHG emissions simultaneously. Chinese city traffic conditions will help EVs to obtain more benefits in respect of the economy and environment
-
Direct and Indirect Electron Emission from the Green Fluorescent Protein Chromophore
Toker, Y.; Rahbek, D. B.; Klærke, B.; Bochenkova, A. V.; Andersen, L. H.
2012-09-01
Photoelectron spectra of the deprotonated green fluorescent protein chromophore have been measured in the gas phase at several wavelengths within and beyond the S0-S1 photoabsorption band of the molecule. The vertical detachment energy (VDE) was determined to be 2.68±0.1eV. The data show that the first electronically excited state is bound in the Franck-Condon region, and that electron emission proceeds through an indirect (resonant) electron-emission channel within the corresponding absorption band.
-
Zero-phonon line and fine structure of the yellow luminescence band in GaN
Reshchikov, M. A.; McNamara, J. D.; Zhang, F.; Monavarian, M.; Usikov, A.; Helava, H.; Makarov, Yu.; Morkoç, H.
2016-07-01
The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero-phonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.
-
International Nuclear Information System (INIS)
Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.
2010-01-01
In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)
-
Wu, Zengyang
2016-08-18
In this paper, spray combustion of diesel (No. 2) and diesel-gasoline blend (dieseline: 80% diesel and 20% gasoline by volume) were investigated in an optically accessible constant volume combustion chamber. Effects of ambient conditions on flame emissions were studied. Ambient oxygen concentration was varied from 12% to 21% and three ambient temperatures were selected: 800 K, 1000 K and 1200 K. An intensified CCD camera coupled with bandpass filters was employed to capture the quasi-steady state flame emissions at 430 nm and 470 nm bands. Under non-sooting conditions, the narrow-band flame emissions at 430 nm and 470 nm can be used as indicators of CH∗ (methylidyne) and HCHO∗ (formaldehyde), respectively. The lift-off length was measured by imaging the OH∗ chemiluminescence at 310 nm. Flame emission structure and intensity distribution were compared between dieseline and diesel at wavelength bands. Flame emission images show that both narrow band emissions become shorter, thinner and stronger with higher oxygen concentration and higher ambient temperature for both fuels. Areas of weak intensity are observed at the flame periphery and the upstream for both fuels under all ambient conditions. Average flame emission intensity and area were calculated for 430 nm and 470 nm narrow-band emissions. At a lower ambient temperature the average intensity increases with increasing ambient oxygen concentration. However, at the 1200 K ambient temperature condition, the average intensity is not increasing monotonically for both fuels. For most of the conditions, diesel has a stronger average flame emission intensity than dieseline for the 430 nm band, and similar phenomena can be observed for the 470 nm band with 800 K and 1200 K ambient temperatures. However, for the 1000 K ambient temperature cases, dieseline has stronger average flame emission intensities than diesel for all oxygen concentrations at 470 nm band. Flame emissions for the two bands have a
-
Photoluminescence emission spectra of Makrofol® DE 1-1 upon irradiation with ultraviolet radiation
El Ghazaly, M.; Aydarous, Abdulkadir
Photoluminescence (PL) emission spectra of Makrofol® DE 1-1 (bisphenol-A based polycarbonate) upon irradiation with ultraviolet radiation of different wavelengths were investigated. The absorption-and attenuation coefficient measurements revealed that the Makrofol® DE 1-1 is characterized by high absorbance in the energy range 6.53-4.43 eV but for a lower energy than 4.43 eV, it is approximately transparent. Makrofol® DE 1-1 samples were irradiated with ultraviolet radiation of wavelength in the range from 250 (4.28 eV) to 400 (3.10 eV) nm in step of 10 nm and the corresponding photoluminescence (PL) emission spectra were measured with a spectrofluorometer. It is found that the integrated counts and the peak height of the photoluminescence emission (PL) bands are strongly correlated with the ultraviolet radiation wavelength. They are increased at the ultraviolet radiation wavelength 280 nm and have maximum at 290 nm, thereafter they decrease and diminish at 360 nm of ultraviolet wavelength. The position of the PL emission band peak was red shifted starting from 300 nm, which increased with the increase the ultraviolet radiation wavelength. The PL bandwidth increases linearly with the increase of the ultraviolet radiation wavelength. When Makrofol® DE 1-1 is irradiated with ultraviolet radiation of short wavelength (UVC), the photoluminescence emission spectra peaks also occur in the UVC but of a relatively longer wavelength. The current new findings should be considered carefully when using Makrofol® DE 1-1 in medical applications related to ultraviolet radiation.
-
Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals
Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.
2017-10-01
We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.
-
Unidentified bands lambda lambda 6830, 7088 in symbiotic stars
Energy Technology Data Exchange (ETDEWEB)
Allen, D A [Anglo-Australian Observatory, Epping (Australia)
1980-01-01
About 60 stars are known which show broad emission bands centred at wavelengths of 6830 and 7088 A. The stars are all classified as symbiotic, since they combine high-excitation emission and M-type absorption spectra. From the behaviour of the bands in the evolution of slow novae as they approach the symbiotic phase, and from the occurrence of the bands in stars of different excitation, it is concluded that the ions responsible have ionization potentials near 100 eV. The similarity of behaviour and profile of the two suggests that both arise in the same species. No suitable identification appears possible at this time, because of the lack of data on highly ionized species. Arguments are presented which narrow the range of possibilities, the most notable argument being the absence of O VI emission. It is suggested that Fe VII or Fe VI may be responsible. In particular, it is recommended that transitions from the z/sup 3/P/sup 0/ and z/sup 1/F/sup 0/ levels of Fe VII be examined in detail. The differing, and time-varying profiles of the 6830 and 7088 bands in the stars observed are best explained in terms of velocity broadening. Velocities in excess of 1000 km s/sup -1/ are present. Rotation is a more credible form of the mass motion than expansion, because of the tendency to double profiles in these bands. If rotation is responsible, these velocities imply that the objects central to the emission nebulae are more compact than main sequence stars.
-
DEFF Research Database (Denmark)
Poolton, H.R.J.; Ozanyan, K.B.; Wallinga, J.
2002-01-01
consider what influence the band tails have on the luminescence properties of feldspar, where electrons travel through the sample prior to recombination. The work highlights the dominant role that 0.04-0.05-eV phonons play in both the luminescence excitation and emission processes of these materials...
-
International Nuclear Information System (INIS)
Kuen, I.; Howorka, F.
1983-01-01
Absolute cross sections for the excitation of optically emitting states in collisions of He + , Ne + , Ar + , Kr + , B + , He ++ , Ne ++ and Ar ++ with oxygen molecules are measured, the energy range of the ion being1 - 1800 eV Lab for the singly charged and 1 - 3600 eV for the doubly charged ions. Seven important processes can be distinguished: charge exchange excitation of O 2 + band, O I, O II, X I and X II lines (X + , X ++ being the primary ion), direct excitation of X II and double charge exchange excitations. The energy dependences of the excitation cross sections are remarkably different for different processes but similar for one process with different ions. The sum total of all cross sections together for excitations which lead to light emission is on the order of a few square angstroms at 1000 eV c.m. energy. The results are of interest for surface investigations, plasma diagnostics and laser work. (Author)
-
Exciton Emission from Bare and Alq3/Gold Coated GaN Nanorods
Mohammadi, Fatemesadat; Kuhnert, Gerd; Hommel, Detlef; Schmitzer, Heidrun; Wagner, Hans-Peter
We study the excitonic and impurity related emission in bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL). The GaN nanorods were grown by molecular beam epitaxy. Alq3 as well as Alq3/gold covered nanorods were synthesized by organic molecular beam deposition. In the near-band edge region a donor-bound-exciton (D0X) emission is observed at 3.473 eV. Another emission band at 3.275 eV reveals LO-phonon replica and is attributed to a donor-acceptor-pair (DAP) luminescence. TR PL traces at 20 K show a nearly biexponential decay for the D0X with lifetimes of approximately 180 and 800 ps for both bare and Alq3 coated nanorods. In GaN nanorods which were coated with an Alq3 film and subsequently with a 10 nm thick gold layer we observe a PL quenching of D0X and DAP band and the lifetimes of the D0X transition shorten. The quenching behaviour is partially attributed to the energy-transfer from free excitons and donor-bound-excitons to plasmon oscillations in the gold layer.
-
International Nuclear Information System (INIS)
Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo
2013-01-01
Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations
-
The quasiparticle band structure of zincblende and rocksalt ZnO.
Dixit, H; Saniz, R; Lamoen, D; Partoens, B
2010-03-31
We present the quasiparticle band structure of ZnO in its zincblende (ZB) and rocksalt (RS) phases at the Γ point, calculated within the GW approximation. The effect of the p-d hybridization on the quasiparticle corrections to the band gap is discussed. We compare three systems, ZB-ZnO which shows strong p-d hybridization and has a direct band gap, RS-ZnO which is also hybridized but includes inversion symmetry and therefore has an indirect band gap, and ZB-ZnS which shows a weaker hybridization due to a change of the chemical species from oxygen to sulfur. The quasiparticle corrections are calculated with different numbers of valence electrons in the Zn pseudopotential. We find that the Zn(20+) pseudopotential is essential for the adequate treatment of the exchange interaction in the self-energy. The calculated GW band gaps are 2.47 eV and 4.27 eV respectively, for the ZB and RS phases. The ZB-ZnO band gap is underestimated compared to the experimental value of 3.27 by ∼ 0.8 eV. The RS-ZnO band gap compares well with the experimental value of 4.5 eV. The underestimation for ZB-ZnO is correlated with the strong p-d hybridization. The GW band gap for ZnS is 3.57 eV, compared to the experimental value of 3.8 eV.
-
Emission bands of phosphorus and calculation of band structure of rare earth phosphides
International Nuclear Information System (INIS)
Al'perovich, G.I.; Gusatinskij, A.N.; Geguzin, I.I.; Blokhin, M.A.; Torbov, V.I.; Chukalin, V.I.; AN SSSR, Moscow. Inst. Novykh Khimicheskikh Problem)
1977-01-01
The method of x-ray emission spectroscopy has been used to investigate the electronic structure of monophosphides of rare-earth metals (REM). The fluorescence K bands of phosphorus have been obtained in LaP, PrP, SmP, GdP, TbP, DyP, HoP, ErP, TmP, YbP, and LuP and also the Lsub(2,3) bands of phosphorus in ErP, TmP, YbP, and LuP. Using the Green function technique involving the muffin-tin potential, the energy spectrum for ErP has been calculated in the single-electron approximation. The hystogram of electronic state distribution N(E) is compared with the experimental K and Lsub(2,3) bands of phosphorus in ErP. The agreement between the main details of N(E) and that of x-ray spectra allows to state that the model used provides a good description of the electron density distribution in crystals of REM monophosphides. In accordance with the character of the N(E) distribution the compounds under study are classified as semimetals or semiconductors with a very narrow forbidden band
-
Near-infrared emission bands of TeH and TeD
Fink, E. H.; Setzer, K. D.; Ramsay, D. A.; Vervloet, M.
1989-11-01
High-resolution emission spectra of TeH and TeD have been obtained in the region 4200 to 3600 cm -1 using a Bomem DA3.002 Fourier transform spectrometer. Analyses are given for the 0-0 and 1-1 bands of the X 22Π{1}/{2}-X 12Π{3}/{2} system of TeH and for the 0-0 band of TeD. In addition the 2-0 vibrational overtone bands of 130TeH, 128TeH, and 126TeH are observed and analyzed. Accurate molecular constants are given for the first time.
-
The composite nature of the thermoluminescence UV emission of quartz
Energy Technology Data Exchange (ETDEWEB)
Fasoli, Mauro, E-mail: mauro.fasoli@mater.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via R. Cozzi 55, I-20125 Milano (Italy); INFN, Sezione di Milano Bicocca, Piazza della Scienza 1, I-20126 Milano (Italy); Martini, Marco [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via R. Cozzi 55, I-20125 Milano (Italy); INFN, Sezione di Milano Bicocca, Piazza della Scienza 1, I-20126 Milano (Italy)
2016-05-15
The radioluminescence (RL) spectra of three types of quartz have been compared to those obtained from wavelength resolved thermally stimulated luminescence (TSL) measurements. A detailed numerical deconvolution into Gaussian components allowed to identify which of the bands are involved in either types of luminescence processes. The blue “A band” at 2.51 eV was confirmed to dominate both RL and TSL spectra in samples exposed to prolonged irradiation. The UV emission of the 110 °C TSL peak was found to be composite. Analogously to what previously reported for RL spectra, an annealing at 500 °C for 10 min induced a strong enhancement of the “C band” at 3.42 eV. This effect was particularly evident in natural and pre-irradiated quartz. A second intense UV component, the “M band” at 3.7 eV, was found to contribute to both TSL and RL spectra of samples annealed at 1000 °C for 10 min. A further broad UV emission seems to be involved only in RL emission but not in the TSL one.
-
Photo field emission spectroscopy of the tantalum band structure
International Nuclear Information System (INIS)
Kleint, Ch.; Radon, T.
1978-01-01
Photo field emission (PFE) currents of clean and barium covered tantalum tips have been measured with single lines of the mercury arc spectrum and phase-sensitive detection. Field strength and work function were determined from Fowler-Nordheim plots of the FE currents. Shoulders in the PFE current-voltage characteristics could be correlated to transitions in the band structure of tantalum according to a recently proposed two-step PFE model. A comparison with the relativistic calculations of Mattheiss and the nonrelativistic bands of Petroff and Viswanathan shows that Mattheiss' bands are more appropriate. Beside direct transitions several nondirect transitions from the different features composing the upper two density of states maxima below the Fermi edge of tantalum have been found. (Auth.)
-
Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang
2014-05-14
Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.
-
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
Energy Technology Data Exchange (ETDEWEB)
Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Vasilyeva, G. Yu.; Ivánov, Yu. L.; Zakhar’in, A. O.; Andrianov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Vorobiev, L. E.; Firsov, D. A. [Peter the Great Saint-Petersburg Polytechnic University (Russian Federation); Grigoriev, M. N. [Ustinov Baltic State Technical University “VOENMEKh” (Russian Federation); Antonov, A. V.; Ikonnikov, A. V.; Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-07-15
The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.
-
Rain effect on Aquarius L-band Emissivity and Backscatter Model Functions
Tang, W.; Yueh, S. H.; Fore, A.; Neumann, G.; Hayashi, A.
2012-12-01
Remote sensing of sea surface salinity (SSS) is being performed by Aquarius and SMOS missions, which are using L-band radiometry to sense the microwave emissions from sea surfaces. To enable accurate SSS retrieval, it is essential to correct the impact of sea surface roughness on L-band brightness temperatures. In addition, the impact of rain has to be carefully assessed and accounted for. Although the atmospheric attenuation caused by raindrops are likely negligible at 1.4GHz, other factors must be considered because they may have indirect but important contribution to the surface roughness and consequently L-band brightness temperatures. For example, the wind speed dependent roughness correction will be corrupted when rain striking the water, creating rings, stalks, and crowns from which the signal scatters. It is also unknown how long the freshwater stays at surface while through the oceanic mixing process at various regions over global oceans. We collocated the Aquarius L-band data with various wind products, including SSM/I, NCEP, ASCAT and WindSAT, as well as the SSM/I and WindSAT rain products. During the first four months of Aquarius mission, near 1.9 million pixels are identified under rain conditions by either SSM/I or WindSAT. We derived the L-band emissivity and backscatter geophysical model functions (GMF), parameterized by SSM/I and NCEP winds for rain-free conditions. However, the residual ocean surface emissivity (the Aquarius measured minus the rain-free model predictions) reveals profound resemblance with global precipitation pattern. In region dominated by rain, e.g. ITCZ, northern hemisphere storm track, and Indian Ocean partially under the influence of summer monsoon, the GMF built using rain free data underestimates excess emissivity about 0.5 to 1 K. The dependence of residual of emissivity and backscatter is shown as a function of wind speed and rain rate. A modified GMF is developed including rain rate as one of the parameters. Due to
-
Chiasera, A.; Meroni, C.; Varas, S.; Valligatla, S.; Scotognella, F.; Boucher, Y. G.; Lukowiak, A.; Zur, L.; Righini, G. C.; Ferrari, M.
2018-06-01
All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.
-
Near band edge emission characteristics of sputtered nano-crystalline ZnO films
International Nuclear Information System (INIS)
Kunj, Saurabh; Sreenivas, K.
2016-01-01
Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O_2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.
-
Near band edge emission characteristics of sputtered nano-crystalline ZnO films
Kunj, Saurabh; Sreenivas, K.
2016-05-01
Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.
-
Near band edge emission characteristics of sputtered nano-crystalline ZnO films
Energy Technology Data Exchange (ETDEWEB)
Kunj, Saurabh; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)
2016-05-06
Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.
-
Emission of ZnO:Ag nanorods obtained by ultrasonic spray pyrolysis
Energy Technology Data Exchange (ETDEWEB)
Velázquez Lozada, E., E-mail: evlozada5@yahoo.com.mx [ESIME – Instituto Politécnico Nacional, México D.F. 07738 (Mexico); Torchynska, T.V.; Casas Espinola, J.L. [ESFM – Instituto Politécnico Nacional, México D.F. 07738 (Mexico); Pérez Millan, B. [UPIITA – Instituto Politécnico Nacional, México D.F. 07738 (Mexico)
2014-11-15
Scanning electronic microscopy (SEM), X ray diffraction (XRD), photoluminescence (PL) and its temperature dependence have been studied in ZnO:Ag nanorods (NRs) prepared by the ultrasonic spray pyrolysis (USP) method. The time variation at the growth of ZnO:Ag films permits modifying the ZnO phase from the amorphous to crystalline, to change the size of ZnO:Ag NRs and to vary their emission spectra. PL spectra of ZnO:Ag NRs versus temperature has been investigated. This study reveals that the PL band related to the acceptor Ag{sub Zn} (LO phonon replicas of an acceptor bound exciton, ABE (2.877 eV)), and its second-order diffraction peak (1.44 eV) disappeared in the temperature range of 10–170 K with the formation of free exciton (FX). The PL intensity of defect related PL bands decreases monotonously in the range 10–300 K with the activation energy of 13 meV. The PL band (3.22 eV), related to the LO phonon replica of free exciton (FX-2LO) and its second-order diffraction peak (1.61 eV) increase monotonously in the range 10–300 K. FX related peak dominates in PL spectra at room temperature that testifies on the high quality of ZnO:Ag films prepared by the USP technology.
-
Energy band dispersion in photoemission spectra of argon clusters
International Nuclear Information System (INIS)
Foerstel, Marko; Mucke, Melanie; Arion, Tiberiu; Lischke, Toralf; Barth, Silko; Ulrich, Volker; Ohrwall, Gunnar; Bjoerneholm, Olle; Hergenhahn, Uwe; Bradshaw, Alex M.
2011-01-01
Using photoemission we have investigated free argon clusters from a supersonic nozzle expansion in the photon energy range from threshold up to 28 eV. Measurements were performed both at high resolution with a hemispherical electrostatic energy analyser and at lower resolution with a magnetic bottle device. The latter experiments were performed for various mean cluster sizes. In addition to the ∼1.5 eV broad 3p-derived valence band seen in previous work, there is a sharper feature at ∼15 eV binding energy. Surprisingly for non-oriented clusters, this peak shifts smoothly in binding energy over the narrow photon energy range 15.5-17.7 eV, indicating energy band dispersion. The onset of this bulk band-like behaviour could be determined from the cluster size dependence.
-
BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY
Directory of Open Access Journals (Sweden)
Hee Jae Kang2
2011-11-01
Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.
-
Enhanced native acceptor-related blue emission of ZnO thin films annealed in an oxygen ambient
International Nuclear Information System (INIS)
Shim, Eunhee; Lee, Choeun; Jung, Eiwhan; Lee, Jinyong; Kim, Doosoo; Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon
2012-01-01
The thermodynamic behaviors of charged point defects in unintentionally-doped ZnO thin films were investigated. The as-grown sample displayed two different types of blue-emission bands: one at ∼2.95 eV from native-donor zinc interstitial (Zn i ) and the other at ∼3.17 eV from native acceptor zinc vacancies (V Zn ). In the samples annealed at oxygen ambience, V Zn -related emission was dramatically enhanced, and Zn i -related emission was drastically reduced. The behavior was observed to become more apparent when the annealing temperature was increased. The results can be explained by both the increased generation probability and the lowered formation enthalpy of V Zn in an oxygen-rich environment, particularly at higher temperatures.
-
Enhanced native acceptor-related blue emission of ZnO thin films annealed in an oxygen ambient
Energy Technology Data Exchange (ETDEWEB)
Shim, Eunhee; Lee, Choeun; Jung, Eiwhan; Lee, Jinyong; Kim, Doosoo; Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon [Dongguk University, Seoul (Korea, Republic of)
2012-06-15
The thermodynamic behaviors of charged point defects in unintentionally-doped ZnO thin films were investigated. The as-grown sample displayed two different types of blue-emission bands: one at ∼2.95 eV from native-donor zinc interstitial (Zn{sub i}) and the other at ∼3.17 eV from native acceptor zinc vacancies (V{sub Zn}). In the samples annealed at oxygen ambience, V{sub Zn}-related emission was dramatically enhanced, and Zn{sub i}-related emission was drastically reduced. The behavior was observed to become more apparent when the annealing temperature was increased. The results can be explained by both the increased generation probability and the lowered formation enthalpy of V{sub Zn} in an oxygen-rich environment, particularly at higher temperatures.
-
Kaur, Avneet; Bakhshi, A. K.
2010-04-01
The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.
-
Bulk band gaps in divalent hexaborides: A soft x-ray emission study
International Nuclear Information System (INIS)
Denlinger, Jonathan D.; Gweon, Gey-Hong; Allen, James W.; Bianchi, Andrea D.; Fisk, Zachary
2001-01-01
Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and consistent with surface-sensitive angle-resolved photoemission experiments, confirm the existence of a bulk band gap and the location of the chemical potential at the bottom of the conduction band
-
DEFF Research Database (Denmark)
Jensen, Thomas Christian; Christensen, Linda
for the transport sector is announced to be a reduction of greenhouse gas emissions by 20% in 2020 compared to 2005. It is the plan to obtain part of this reduction through the EU targets of 10% renewable energy by 2020 in surface transport and a requirement for EU car producers to lower average CO2 emissions from...... to the end of 2015. More ambitious greenhouse gas reductions are announced and EV’s may contrib-ute to such targets. However, no specific target has been set for the share of electric vehicles. In order to investigate the potential role of electric vehicles (EVs), DTU transport has construct-ed a small car...
-
International Nuclear Information System (INIS)
Yater, J. E.; Shaw, J. L.; Pate, B. B.; Feygelson, T. I.
2016-01-01
Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron
-
Modeling of Electric Vehicles (EVs) for EV Grid Integration Study
DEFF Research Database (Denmark)
Wu, Qiuwei; Nielsen, Arne Hejde; Østergaard, Jacob
2010-01-01
In order to successfully integrate EVs into power systems, it is necessary to develop a detailed EV model considering both the EV users’ driving requirements and the battery charging and discharging characteristics. A generic EV model was proposed which takes into account charging and discharging...... characteristics of EV batteries, the driving distance per trip and the availability of EVs for charging and providing grid service. The charging and discharging characteristics of EV batteries were used to determine the upper and lower limits of the state of charge (SOC) of EV batteries and to calculate...... the charging and discharging power. The driving distance per trip and availability of EVs were used to reflect the driving requirements and to implement intelligent charging and discharging management....
-
Band gap of β-PtO2 from first-principles
Directory of Open Access Journals (Sweden)
Yong Yang
2012-06-01
Full Text Available We studied the band gap of β-PtO2 using first-principles calculations based on density functional theory (DFT. The results are obtained within the framework of the generalized gradient approximation (GGA, GGA+U, GW, and the hybrid functional methods. For the different types of calculations, the calculated band gap increases from ∼0.46 eV to 1.80 eV. In particular, the band gap by GW (conventional and self-consistent calculation shows a tendency of converging to ∼1.25 ± 0.05 eV. The effect of on-site Coulomb interaction on the bonding characteristics is also analyzed.
-
Analysis method and utilization mechanism of the overall value of EV charging
International Nuclear Information System (INIS)
Guo, Chunlin; Chan, Ching Chuen
2015-01-01
Highlights: • Analysis on the overall value of EV charging from a viewpoint of system. • An analytical model of the overall value of EV charging was presented. • A model was proposed to calculate the value of emission reduction by EV. • A model to evaluate the improvement in new energy utilization was given. • A utilization mechanism apt to overall optimization was proposed. - Abstract: Electric Vehicle (EV) can save energy while reducing emissions and has thus attracted the attention of both academics and industry. The cost and benefit of charging are one of the key issues in relation to EV development that has been researched extensively. But many studies are carried out from a viewpoint of some local entities rather than a global system, focus on specific types or aspects of EV charging, or use mixed models that can only be computed by computer simulation and lack physical transparency. This paper illuminated that it is necessary to consider the value of EV charging on a system scale. In order to achieve this, it presents an analytical model for analyzing the overall value of EVs, an analysis model to evaluate the reduction of pollutions relevant to photovoltaic power, and a model to transfer the intrinsic savings of wind power to the off-peak charging loads. It is estimated that EV charging has a significant positive value, providing the basis for enhanced EV subsidies. Accordingly, a utilization mechanism apt to optimize globally is proposed, upon which sustainable business models can be formed by providing adequate support, including the implementation of a peak–valley tariff, charging subsidies and one-time battery subsidies. This utilization mechanism, by taking full advantage of the operation system of power utilities to provide basic support and service, may provide new approaches to the development of EVs. The method proposed here is of important value for the systematic considerations about EV development and maybe can help broaden the
-
Modelling the impact of EVs on electricity generation, costs and CO2 emissions
International Nuclear Information System (INIS)
Calnan, P.; Deane, J.P.; Ó Gallachóir, B.P.
2013-01-01
This paper focuses on the impact of electric vehicles on electricity generation in Ireland in 2025 based on five alternative generation portfolios. The year 2025 was selected for assessment due to the information on the composition of the five generation portfolios from Eirgrid the system operator in Ireland being provided. Detailed market simulations were undertaken on the five possible generation portfolios to assess the impact of the Government targets for electric vehicles on the generation costs, emissions, generation stack and the cost to load of this additional demand. This paper also studied the impact between a standard and least cost electric vehicle loading regime to ascertain the benefits that could be achieved. The results show that gas will be the dominant source of electricity generation to load electric vehicles and that wind as an electricity source will experience a minor reduction in curtailment, with the least cost charging profile showing a more pronounced reduction. The capital benefits of the Standard and Least Cost EV load are found to be negligible. The portfolios studied generated CO 2 emissions per kilometre between 52 and 70 gCO 2 /km. All portfolios with the exception of coal were found to comply with EU regulation 443/2009. - Highlights: • This paper focuses on the impact of electric vehicles on electricity generation in Ireland in 2025. • It uses the PLEXOS software package by Energy Exemplar to model the Irish electricity market. • Government targets for electric vehicle penetration have a limited impact on the power system. • Electric vehicles will meet EU requirements in terms of emissions created per kilometre
-
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
Directory of Open Access Journals (Sweden)
E. Kasper
2012-01-01
Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
-
Energy Technology Data Exchange (ETDEWEB)
Song, Y. [Ames Laboratory, U.S. Department of Energy and Department of Chemistry, Iowa State University, Ames, Iowa 50011 (United States); Evans, M. [Ames Laboratory, U.S. Department of Energy and Department of Chemistry, Iowa State University, Ames, Iowa 50011 (United States); Ng, C. Y. [Ames Laboratory, U.S. Department of Energy and Department of Chemistry, Iowa State University, Ames, Iowa 50011 (United States); Hsu, C.-W. [Chemical Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Jarvis, G. K. [Chemical Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2000-01-15
We have obtained rotationally resolved pulsed-field ionization photoelectron (PFI-PE) spectra for O{sub 2} in the energy range of 17.05-18.13 eV, covering the ionization transitions O{sub 2}{sup +}(A {sup 2}{pi}{sub u},v{sup +}=0-12,N{sup +})(<-)O{sub 2}(X {sup 3}{sigma}{sub g}{sup -},v{sup ''}=0,N{sup ''}). Although these O{sub 2}{sup +}(A {sup 2}{pi}{sub u},v{sup +}) PFI-PE bands have significant overlaps with vibrational bands for O{sub 2}{sup +}(a {sup 4}{pi}{sub u}) and O{sub 2}{sup +}(X {sup 2}{pi}{sub g}), we have identified all the O{sub 2}{sup +}(A {sup 2}{pi}{sub u},v{sup +}=0-12) bands by simulation of spectra obtained using supersonically cooled O{sub 2} samples with rotational temperatures {approx_equal}20 and 220 K. While these v{sup +}=0-12 PFI-PE bands represent the first rotationally resolved photoelectron data for O{sub 2}{sup +}(A {sup 2}{pi}{sub u}), the PFI-PE bands for O{sub 2}{sup +}(A {sup 2}{pi}{sub u},v{sup +}=9 and 10) are the first rotationally resolved spectroscopic data for these levels. The simulation also allows the determination of accurate ionization energies, vibrational constants, and rotational constants for O{sub 2}{sup +}(A {sup 2}{pi}{sub u},v{sup +}=0-12). The analysis of the PFI-PE spectra supports the conclusion of the previous emission study that the O{sub 2}{sup +}(A {sup 2}{pi}{sub u},v{sup +}=9 and 10) states are strongly perturbed by a nearby electronic state. (c) 2000 American Institute of Physics.
-
PROBING THE IONIZATION STATES OF POLYCYCLIC AROMATIC HYDROCARBONS VIA THE 15–20 μm EMISSION BANDS
Energy Technology Data Exchange (ETDEWEB)
Shannon, M. J.; Stock, D. J.; Peeters, E., E-mail: mshann3@uwo.ca [Department of Physics and Astronomy, University of Western Ontario, London, ON, N6A 3K7 (Canada)
2015-10-01
We report new correlations between ratios of band intensities of the 15–20 μm emission bands of polycyclic aromatic hydrocarbons (PAHs) in a sample of 57 sources observed with the Spitzer/Infrared Spectrograph. This sample includes Large Magellanic Cloud point sources from the SAGE-Spec survey, nearby galaxies from the Spitzer Infrared Nearby Galaxies Survey survey, two Galactic interstellar medium cirrus sources, and the spectral maps of the Galactic reflection nebulae NGC 2023 and NGC 7023. We find that the 16.4, 17.4, and 17.8 μm band intensities are inter-correlated in all environments. In NGC 2023 and NGC 7023 these bands also correlate with the 11.0 and 12.7 μm band intensities. The 15.8 μm band correlates only with the 15–18 μm plateau and the 11.2 μm emission. We examine the spatial morphology of these bands and introduce radial cuts. We find that these bands can be spatially organized into three sets: the 12.7, 16.4, and 17.8 μm bands; the 11.2, 15.8 μm bands and the 15–18 μm plateau; and the 11.0 and 17.4 μm bands. We also find that the spatial distribution of the 12.7, 16.4, and 17.8 μm bands can be reconstructed by averaging the spatial distributions of the cationic 11.0 μm and neutral 11.2 μm bands. We conclude that the 17.4 μm band is dominated by cations, the 15.8 μm band by neutral species, and the 12.7, 16.4, and 17.8 μm bands by a combination of the two. These results highlight the importance of PAH ionization for spatially differentiating sub-populations by their 15–20 μm emission variability.
-
Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O
Energy Technology Data Exchange (ETDEWEB)
Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)
2016-09-01
We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.
-
High-energy band structure of gold
DEFF Research Database (Denmark)
Christensen, N. Egede
1976-01-01
The band structure of gold for energies far above the Fermi level has been calculated using the relativistic augmented-plane-wave method. The calculated f-band edge (Γ6-) lies 15.6 eV above the Fermi level is agreement with recent photoemission work. The band model is applied to interpret...
-
Use of IRI to Model the Effect of Ionosphere Emission on Earth Remote Sensing at L-Band
Abraham, Saji; LeVine, David M.
2004-01-01
Microwave remote sensing in the window at 1.413 GHz (L-band) set aside for passive use only is important for monitoring sea surface salinity and soil moisture. These parameters are important for understanding ocean dynamics and energy exchange between the surface and atmosphere, and both NASA and ESA plan to launch satellite sensors to monitor these parameters at L-band (Aquarius, Hydros and SMOS). The ionosphere is an important source of error for passive remote sensing at this frequency. In addition to Faraday rotation, emission from the ionosphere is also a potential source of error at L-band. As an aid for correcting for emission, a regression model is presented that relates ionosphere emission to the integrated electron density (TEC). The goal is to use TEC from sources such as TOPEX, JASON or GPS to obtain estimates of emission over the oceans where the electron density profiles needed to compute emission are not available. In addition, data will also be presented to evaluate the use of the IRI for computing emission over the ocean.
-
International Nuclear Information System (INIS)
Minar, J.; Chadov, S.; Ebert, H.; Chioncel, L.; Lichtenstein, A.; De Nadai, C.; Brookes, N.B.
2005-01-01
The influence of dynamical correlation effects on the valence band photoelectron emission of ferromagnetic Fe, Co and Ni has been investigated. Angle-resolved as well as angle-integrated valence band photoelectron emission spectra were calculated on the basis of the one-particle Green's function, which was obtained by using the fully relativistic Korringa-Kohn-Rostoker method. The correlation effects have been included in terms of the electronic self-energy which was calculated self-consistently within Dynamical Mean-Field Theory (DMFT). In addition a theoretical approach to calculate high-energy angle-resolved valence band photoelectron emission spectra is presented
-
Reflectivity of single-crystal GeS from 0.1-30 eV
International Nuclear Information System (INIS)
Wiley, J.D.; Buckel, W.J.; Braun, W.; Fehrenbach, G.W.; Himpsel, F.J.; Koch, E.E.
1976-03-01
The reflectivity of single-crystal, orthorhombic GeS has been measured at 300 K for all three polarizations in the photon energy range 0.1-30 eV. Eleven distinct peaks or shoulders are observed, about half of which can be associated with known structure in the valence-band density-of-states. A Kramers-Kronig analysis was performed, giving the optical constants and energy-loss functions in the 0-25 eV range. (orig.) [de
-
Band offsets in ITO/Ga2O3 heterostructures
Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito
2017-11-01
The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be -0.78 ± 0.30 eV, while the conduction band offset was determined to be -0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.
-
Band gap tuning of amorphous Al oxides by Zr alloying
DEFF Research Database (Denmark)
Canulescu, Stela; Jones, N. C.; Borca, C. N.
2016-01-01
minimum changes non-linearly as well.Fitting of the energy band gap values resulted in a bowing parameter of 2 eV. The band gap bowing of themixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction bandminimum of anodized Al2O3.......The optical band gap and electronic structure of amorphous Al-Zr mixed oxides, with Zr content ranging from4.8 to 21.9% were determined using vacuum ultraviolet (VUV) and X-ray absorption spectroscopy (XAS). Thelight scattering by the nano-porous structure of alumina at low wavelengths...... was estimated based on the Miescattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on Zr content deviatesfrom linearity and decreases from 7.3 eV for pure anodized Al2O3 to 6.45 eV for Al-Zr mixed oxide with Zrcontent of 21.9%. With increasing Zr content, the conduction band...
-
Liu, Xuedan; Li, Aisen; Xu, Weiqing; Ma, Zhiyong; Jia, Xinru
2018-05-08
We herein report a newly synthesized simple molecule, named TPE[double bond, length as m-dash]C4, with twisted D-A structure. TPE[double bond, length as m-dash]C4 showed two intrinsic emission bands ascribed to the locally excited (LE) state and the intramolecular charge transfer (ICT) state, respectively. In the crystal state, the LE emission band is usually observed. However, by applying hydrostatic pressure to the powder sample and the single crystal sample of TPE[double bond, length as m-dash]C4, dual-fluorescence (445 nm and 532 nm) was emerged under high pressure, owing to the pressure-induced emission band separation of the hybridized local and charge transfer excited state (HLCT). It is found that the emission of TPE[double bond, length as m-dash]C4 is generally determined by the ratio of the LE state to the ICT state. The ICT emission band is much more sensitive to the external pressure than the LE emission band. The HLCT state leads to a sample with different responsiveness to grinding and hydrostatic pressure. This study is of significance in the molecular design of such D-A type molecules and in the control of photoluminescence features by molecular structure. Such results are expected to pave a new way to further understand the relationship between the D-A molecular structure and stimuli-responsive properties.
-
Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy
International Nuclear Information System (INIS)
He, G.; Chen, X.F.; Lv, J.G.; Fang, Z.B.; Liu, Y.M.; Zhu, K.R.; Sun, Z.Q.; Liu, M.
2015-01-01
Highlights: • Band offsets in HfTiO/InGaZnO 4 heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE v ) of sputter deposited HfTiO/InZnGaO 4 (IGZO) heterostructures. A ΔE v value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure
-
Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example
Zhou, Hang
2014-03-27
We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.
-
Band-gap narrowing of TiO2 films induced by N-doping
International Nuclear Information System (INIS)
Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y.
2006-01-01
N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 o C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from X-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at 1.18 and 2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N-doping and contributes to band-gap narrowing by mixing with the O 2p valence band
-
Hard X-ray emission spectroscopy with pink beam
Energy Technology Data Exchange (ETDEWEB)
Kvashnina, Kristina O.; Rossberg, Andre; Exner, Joerg; Scheinost, Andreas C. [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Molecular Structures
2017-06-01
Valence-band X-ray emission spectroscopy (XES) with a ''pink beam'', i.e. a beam with large energy bandwidth produced by a double-multilayer monochromator, is introduced here to overcome the weak count rate of monochromatic beams produced by conventional double-crystal monochromators. Our results demonstrate that - in spite of the large bandwidth in the order of 100 eV - the high spectral resolution of the Johann-type spectrometer is maintained, while the two orders of magnitude higher flux greatly reduces the required counting time. The short working distance Johann-type X-ray emission spectrometer and multilayer monochromator is available at ROBL.
-
Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging
Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team
The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.
-
Band offsets in HfTiO/InGaZnO{sub 4} heterojunction determined by X-ray photoelectron spectroscopy
Energy Technology Data Exchange (ETDEWEB)
He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China); Fang, Z.B., E-mail: csfzb@usx.edu.cn [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Liu, Y.M.; Zhu, K.R.; Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
2015-09-05
Highlights: • Band offsets in HfTiO/InGaZnO{sub 4} heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE{sub v}) of sputter deposited HfTiO/InZnGaO{sub 4} (IGZO) heterostructures. A ΔE{sub v} value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure.
-
Energy Technology Data Exchange (ETDEWEB)
Machado, Thales R. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Sczancoski, Júlio C. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Beltrán-Mir, Héctor [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Nogueira, Içamira C. [PPGEM-IFMA, Instituto Federal de Educação, Ciência e Tecnologia do Maranhão, 65030-005 São Luís, MA (Brazil); Li, Máximo S. [IFSC-USP, Universidade de São Paulo, P.O. Box 369, 13560-970 São Carlos, SP (Brazil); Andrés, Juan [QFA-UJI, Universitat Jaume I, 12071 Castellón (Spain); Cordoncillo, Eloisa [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Longo, Elson, E-mail: elson.liec@gmail.com [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)
2017-05-15
Defect-related photoluminescence (PL) in materials have attracted interest for applications including near ultraviolet (NUV) excitable light-emitting diodes and in biomedical field. In this paper, hydroxyapatite [Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}] nanorods with intense PL bands (bluish- and yellowish-white emissions) were obtained when excited under NUV radiation at room temperature. These nanoparticles were synthesized via chemical precipitation at 90 °C followed by distinct heat treatments temperatures (200–800 °C). Intense and broad emission profiles were achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). UV–Vis spectroscopy revealed band gap energies (5.58–5.78 eV) higher than the excitation energies (~3.54 and ~2.98 eV at 350 and 415 nm, respectively), confirming the contribution of defect energy levels within the forbidden zone for PL emissions. The structural features were characterized by X-ray diffraction, Rietveld refinement, thermogravimetric analysis, and Fourier transform infrared spectroscopy. By means of these techniques, the relation between structural order-disorder induced by defects, chemical reactions at both lattice and surface of the materials as well as the PL, without activator centers, was discussed in details. - Graphical abstract: The self-activated photoluminescence emissions of chemically precipitated hydroxyapatite nanorods were improved by different heat treatment temperatures. - Highlights: • HA nanorods were synthesized with improved self-activated PL at room temperature. • PL profile and intensity dependents on the temperature of posterior heat treatments. • Bluish- and yellowish-white emissions under NUV excitation (350 and 415 nm). • Broad and intense profiles achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). • PL from the e′–h{sup •} recombination between defect energy levels within the band gap.
-
Battery management systems (BMS) optimization for electric vehicles (EVs) in Malaysia
Salehen, P. M. W.; Su'ait, M. S.; Razali, H.; Sopian, K.
2017-04-01
Following the UN Climate Change Conference 2009 in Copenhagen, Denmark, Malaysia seriously committed on "Go Green" campaign with the aim to reduce 40% GHG emission by the year 2020. Therefore, the National Green Technology Policy has been legalised in 2009 with transportation as one of its focused sectors, which include hybrid (HEVs), electric vehicles (EVs) and fuel cell vehicles with the purpose of to keep up with the worst scenario. While the number of registered cars has been increasing by 1 million yearly, the amount has doubled in the last two decades. Consequently, CO2 emission in Malaysia reaches up to 97.1% and will continue to increase mainly due to the activities in the transportation sector. Nevertheless, Malaysia is now moving towards on green car which battery-based EVs. This type of transportation mainly needs power performance optimization, which is controlled by the Batteries Management System (BMS). BMS is an essential module which leads to reliable power management, optimal power performance and safe vehicle that lead back for power optimization in EVs. Thus, this paper proposes power performance optimization for various setups of lithium-ion cathode with graphene anode using MATLAB/SIMULINK software for better management performance and extended EVs driving range.
-
Optical band gap of ZnO thin films deposited by electron beam evaporation
International Nuclear Information System (INIS)
Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.
2006-01-01
Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)
-
Sub-band-gap absorption in Ga2O3
Peelaers, Hartwin; Van de Walle, Chris G.
2017-10-01
β-Ga2O3 is a transparent conducting oxide that, due to its large bandgap of 4.8 eV, exhibits transparency into the UV. However, the free carriers that enable the conductivity can absorb light. We study the effect of free carriers on the properties of Ga2O3 using hybrid density functional theory. The presence of free carriers leads to sub-band-gap absorption and a Burstein-Moss shift in the onset of absorption. We find that for a concentration of 1020 carriers, the Fermi level is located 0.23 eV above the conduction-band minimum. This leads to an increase in the electron effective mass from 0.27-0.28 me to 0.35-0.37 me and a sub-band-gap absorption band with a peak value of 0.6 × 103 cm-1 at 3.37 eV for light polarized along the x or z direction. Both across-the-gap and free-carrier absorption depend strongly on the polarization of the incoming light. We also provide parametrizations of the conduction-band shape and the effective mass as a function of the Fermi level.
-
Broad-band tunable visible emission of sol-gel derived SiBOC ceramic thin films
International Nuclear Information System (INIS)
Karakuscu, Aylin; Guider, Romain; Pavesi, Lorenzo; Soraru, Gian Domenico
2011-01-01
Strong broad band tunable visible emission of SiBOC ceramic films is reported and the results are compared with one of boron free SiOC ceramic films. The insertion of boron into the SiOC network is verified by Fourier-Transform Infrared Spectroscopy. Optical properties are studied by photoluminescence and ultraviolet-visible spectroscopy measurements. Boron addition causes a decrease in the emission intensity attributed to defect states and shifts the emission to the visible range at lower temperatures (800-900 o C) leading to a very broad tunable emission with high external quantum efficiency.
-
Band-gap engineering of functional perovskites through quantum confinement and tunneling
DEFF Research Database (Denmark)
Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer
2015-01-01
An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...
-
The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
Directory of Open Access Journals (Sweden)
Alvi N
2011-01-01
Full Text Available Abstract In this article, the electroluminescence (EL spectra of zinc oxide (ZnO nanotubes/p-GaN light emitting diodes (LEDs annealed in different ambients (argon, air, oxygen, and nitrogen have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi appearing in the range from 620 nm (1.99 eV to 690 nm (1.79 eV, and to oxygen vacancies (Vo appearing in the range from 690 nm (1.79 eV to 750 nm (1.65 eV. The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.
-
The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
Alvi, N. H.; Ul Hasan, Kamran; Nur, Omer; Willander, Magnus
2011-12-01
In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.
-
Directory of Open Access Journals (Sweden)
Haibo Fan
2016-01-01
Full Text Available The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO of 0.61 eV and a conduction band offset (CBO of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.
-
Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys
International Nuclear Information System (INIS)
Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.
2006-01-01
Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
-
Electronic structure of multiferroic BiFeO3 by resonant soft-x-ray emission spectroscopy
Energy Technology Data Exchange (ETDEWEB)
Higuchi, Tohru; Higuchi, T.; Liu, Y.-S.; Yao, P.; Glans, P.-A.; Guo, Jinghua; Chang, C.; Wu, Z.; Sakamoto, W.; Itoh, N.; Shimura, T.; Yogo, T.; Hattori, T.
2008-07-11
The electronic structure of multiferroic BiFeO{sub 3} has been studied using soft-X-ray emission spectroscopy. The fluorescence spectra exhibit that the valence band is mainly composed of O 2p state hybridized with Fe 3d state. The band gap corresponding to the energy separation between the top of the O 2p valence band and the bottom of the Fe 3d conduction band is 1.3 eV. The soft-X-ray Raman scattering reflects the features due to charge transfer transition from O 2p valence band to Fe 3d conduction band. These findings are similar to the result of electronic structure calculation by density functional theory within the local spin-density approximation that included the effect of Coulomb repulsion between localized d states.
-
International Nuclear Information System (INIS)
Saroj, R K; Dhar, S
2014-01-01
Zinc oxide epitaxial layers have been grown on c-plane sapphire substrates by the chemical vapour deposition (CVD) technique. A structural study shows (0001)-oriented films with good crystalline quality. The temperature and excitation power dependence of the photoluminescence (PL) characteristics of these layers is studied as a function of various growth parameters, such as the growth temperature, oxygen flow rate and Zn flux, which suggest that the origin of the broad visible luminescence (VL), which peaks at 2.45 eV, is the transition between the conduction band and the Zn vacancy acceptor states. A bound excitonic transition observed at 3.32 eV in low temperature PL has been identified as an exciton bound to the neutral Zn vacancy. Our study also reveals the involvement of two activation processes in the dynamics of VL, which has been explained in terms of the fluctuation of the capture barrier height for the holes trapped in Zn vacancy acceptors. The fluctuation, which might be a result of the inhomogeneous distribution of Zn vacancies, is found to be associated with an average height of 7 and 90 meV, respectively, for the local and global maxima. (paper)
-
Band gap opening in silicene on MgBr2(0001) induced by Li and Na
Zhu, Jiajie
2014-11-12
Silicene consists of a monolayer of Si atoms in a buckled honeycomb structure and is expected to be well compatible with the current Si-based technology. However, the band gap is strongly influenced by the substrate. In this context, the structural and electronic properties of silicene on MgBr2(0001) modified by Li and Na are investigated by first-principles calculations. Charge transfer from silicene (substrate) to substrate (silicene) is found for substitutional doping (intercalation). As compared to a band gap of 0.01 eV on the pristine substrate, strongly enhanced band gaps of 0.65 eV (substitutional doping) and 0.24 eV (intercalation) are achieved. The band gap increases with the dopant concentration.
-
Synthesis of copper quantum dots by chemical reduction method and tailoring of its band gap
Directory of Open Access Journals (Sweden)
P. G. Prabhash
2016-05-01
Full Text Available Metallic copper nano particles are synthesized with citric acid and CTAB (cetyltrimethylammonium bromide as surfactant and chlorides as precursors. The particle size and surface morphology are analyzed by High Resolution Transmission Electron Microscopy. The average size of the nano particle is found to be 3 - 10 nm. The optical absorption characteristics are done by UV-Visible spectrophotometer. From the Tauc plots, the energy band gaps are calculated and because of their smaller size the particles have much higher band gap than the bulk material. The energy band gap is changed from 3.67 eV to 4.27 eV in citric acid coated copper quantum dots and 4.17 eV to 4.52 eV in CTAB coated copper quantum dots.
-
Fluctuations of approximatelly 1014 eV cosmic rays
International Nuclear Information System (INIS)
Erdoes, G.; Gombosi, T.; Kota, J.; Owens, A.J.; Somogyi, A.J.; Varga, A.
1977-06-01
It is shown that the approximately 6x10 13 eV primary cosmic ray flux, as observed in the Extensive Air Shower experiment on Musala Peak, has unexplained broad-band aperiodic fluctuations with an amplitude of 0.5%, a spectrum of 1/f, and time scales from days through a year. Possible sources of these fluctuations are discussed: instrumental drifts, data analysis techniques, meteorological effects, and scattering by interstellar electromagnetic field irregularities. (Sz.N.Z.)
-
Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles
Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.
2017-07-01
The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].
-
Energy Technology Data Exchange (ETDEWEB)
Fan, Haibo, E-mail: hbfan@nwu.edu.cn, E-mail: liusz@snnu.edu.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); School of Physics, Northwest University, Xi’an 710069 (China); Yang, Zhou; Ren, Xianpei; Gao, Fei [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Yin, Mingli [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); School of Science, Xi’an Technological University, Xi’an, Shaanxi 710062 (China); Liu, Shengzhong, E-mail: hbfan@nwu.edu.cn, E-mail: liusz@snnu.edu.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023 (China)
2016-01-15
The energy band alignment between pulsed-laser-deposited TiO{sub 2} and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO{sub 2}/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.
-
ALMA BAND 8 CONTINUUM EMISSION FROM ORION SOURCE I
Energy Technology Data Exchange (ETDEWEB)
Hirota, Tomoya; Matsumoto, Naoko [Mizusawa VLBI Observatory, National Astronomical Observatory of Japan, Osawa 2-21-1, Mitaka-shi, Tokyo 181-8588 (Japan); Machida, Masahiro N.; Matsushita, Yuko [Department of Earth and Planetary Sciences, Faculty of Sciences, Kyushu University, Motooka 744, Nishi-ku, Fukuoka-shi, Fukuoka 819-0395 (Japan); Motogi, Kazuhito; Honma, Mareki [Mizusawa VLBI Observatory, National Astronomical Observatory of Japan, Hoshigaoka2-12, Mizusawa-ku, Oshu-shi, Iwate 023-0861 (Japan); Kim, Mi Kyoung [Korea Astronomy and Space Science Institute, Hwaam-dong 61-1, Yuseong-gu, Daejeon, 305-348 (Korea, Republic of); Burns, Ross A., E-mail: tomoya.hirota@nao.ac.jp [Joint Institute for VLBI in Europe, Postbus 2, 7990 AA, Dwingeloo (Netherlands)
2016-12-20
We have measured continuum flux densities of a high-mass protostar candidate, a radio source I in the Orion KL region (Orion Source I) using the Atacama Large Millimeter/Submillimeter Array (ALMA) at band 8 with an angular resolution of 0.″1. The continuum emission at 430, 460, and 490 GHz associated with Source I shows an elongated structure along the northwest–southeast direction perpendicular to the so-called low-velocity bipolar outflow. The deconvolved size of the continuum source, 90 au × 20 au, is consistent with those reported previously at other millimeter/submillimeter wavelengths. The flux density can be well fitted to the optically thick blackbody spectral energy distribution, and the brightness temperature is evaluated to be 700–800 K. It is much lower than that in the case of proton–electron or H{sup −} free–free radiations. Our data are consistent with the latest ALMA results by Plambeck and Wright, in which the continuum emission was proposed to arise from the edge-on circumstellar disk via thermal dust emission, unless the continuum source consists of an unresolved structure with a smaller beam filling factor.
-
Crosstalk effect and its mitigation in Aqua MODIS middle wave infrared bands
Sun, Junqiang; Madhavan, Sriharsha; Wang, Menghua
2017-09-01
The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the National Aeronautics and Space Administration (NASA) Earth Observing System (EOS). The first MODIS instrument was launched in December 1999 on-board the Terra spacecraft. A follow on MODIS was launched on an afternoon orbit in 2002 and is aboard the Aqua spacecraft. Both MODIS instruments are very akin, has 36 bands, among which bands 20 to 25 are Middle Wave Infrared (MWIR) bands covering a wavelength range from approximately 3.750 μm to 4.515 μm. It was found that there was severe contamination in these bands early in mission but the effect has not been characterized and mitigated at the time. The crosstalk effect induces strong striping in the Earth View (EV) images and causes significant retrieval errors in the EV Brightness Temperature (BT) in these bands. An algorithm using a linear approximation derived from on-orbit lunar observations has been developed to correct the crosstalk effect and successfully applied to mitigate the effect in both Terra and Aqua MODIS Long Wave Infrared (LWIR) Photovoltaic (PV) bands. In this paper, the crosstalk effect in the Aqua MWIR bands is investigated and characterized by deriving the crosstalk coefficients using the scheduled Aqua MODIS lunar observations for the MWIR bands. It is shown that there are strong crosstalk contaminations among the five MWIR bands and they also have significant crosstalk contaminations from Short Wave Infrared (SWIR) bands. The crosstalk correction algorithm previously developed is applied to correct the crosstalk effect in these bands. It is demonstrated that the crosstalk correction successfully reduces the striping in the EV images and improves the accuracy of the EV BT in the five bands as was done similarly for LWIR PV bands. The crosstalk correction algorithm should thus be applied to improve both the image quality and radiometric accuracy of the Aqua MODIS MWIR bands Level 1B (L1B) products.
-
Empirical correction for PM7 band gaps of transition-metal oxides.
Liu, Xiang; Sohlberg, Karl
2016-01-01
A post-calculation correction is established for PM7 band gaps of transition-metal oxides. The correction is based on the charge on the metal cation of interest, as obtained from MOPAC PM7 calculations. Application of the correction reduces the average error in the PM7 band gap from ~3 eV to ~1 eV. The residual error after correction is shown to be uncorrelated to the Hartree-Fock method upon which PM7 is based. Graphical Abstract Comparison between calculated band gaps and experimental band gaps for binary oxides. The orange crosses are for corrected PM7 band gaps. Blue squares are uncorrected values. The orange crosses fall closer to the diagonal dashed line, showing an overall improvement of the accuracy of calculated values.
-
Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films
Energy Technology Data Exchange (ETDEWEB)
Awari, N. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); University of Groningen, 9747 AG Groningen (Netherlands); Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Fowley, C., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Green, B.; Yildirim, O.; Lindner, J.; Fassbender, J.; Deac, A. M.; Gensch, M. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Rode, K., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Lau, Y.-C.; Betto, D.; Thiyagarajah, N.; Coey, J. M. D. [CRANN, AMBER and School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Gallardo, R. A. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparíso (Chile)
2016-07-18
Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.
-
Laser induced broad band anti-Stokes white emission from LiYbF4 nanocrystals
Institute of Scientific and Technical Information of China (English)
L. Marciniak; R. Tomala; M. Stefanski; D. Hreniak; W. Strek
2016-01-01
Spectroscopic properties of tetragonal LiYbF4 nanocrystals under high dense NIR excitation at vacuum condition were in-vestigated. White, broad band emission covering whole visible part of the spectrum from LiYbF4 nanocrystals was observed. Its in-tensity strongly depended on the excitation power, excitation wavelength and ambient pressure. Temperature of the nanocrystals un-der 975 nm excitation was determined as a function of excitation power. Strong photo-induced current was observed from LiYbF4 pallet. The emission kinetic was analyzed. The mechanism of the anti-Stokes white emission was discussed in terms of the la-ser-induced charge transfer emission from Yb2+ states.
-
International Nuclear Information System (INIS)
Abbasov, Sh.M.; Allakhverdiev, K.R.; Agaverdieva, G.T.; Bakhyshov, N.A.; Nagiev, A.I.
1987-01-01
Solid solutions belonging to the Ge 1-x Si x system are among the promising semiconductor materials. There is no published information on the absorption band in the region of 0.52 eV in Ge 1-x Si x solid solutions irradiated with fast electrons. The authors determined the infrared absorption spectra, impurity photoconductivity, and Hall effect of n-type Ge 1-x Si x solid solutions doped with antimony. These solid solutions were irradiated at 77 K with 5 MeV electrons in doses up to 2 x 10 17 cm -2 . This irradiation was carried out by a method described in Ref. 3
-
Band formation in xenon-argon alloys studied by photoelectron spectroscopy
International Nuclear Information System (INIS)
Nuernberger, R.; Himpsel, F.J.; Schwentner, N.; Koch, E.E.
1977-01-01
Photoelectron energy distribution curves for Xenon-Argon alloys for concentrations ranging from 0-100% have been measured by excitation with synchrotron radiation at hupsilon = 13.8 eV, 16.5 eV and 18.0 eV. With increasing Xe concentration the gradual formation of Xe valence bands starting from the atomic Xe 5p 1 / 2 and Xe 5p 3 / 2 states is observed. Similarly with Ar the 3p states are broadened with increasing Ar concentration. Rather high concentrations of Xe or Ar are necessary in order to reach the fully developed Xe or Ar bands respectively. The results are discussed in terms of a concentration dependent tightbinding bandstructure. (orig.) [de
-
Band gap engineering of N-alloyed Ga2O3 thin films
Directory of Open Access Journals (Sweden)
Dongyu Song
2016-06-01
Full Text Available The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.
-
International Nuclear Information System (INIS)
OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.
1997-01-01
We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society
-
Energy Technology Data Exchange (ETDEWEB)
Flores, F; Aceves, M. [Instituto Nacional de Astrofisica Optica y Electronica, Mexico, D.F. (Mexico); Carrillo, J. [Benemrita Universidad Autonoma de Puebla, Puebla (Mexico); Dominguez, C. [Universida Autonoma de Barcelona, Barcelona (Spain); Falcony, C. [Instituto Politecnico Nacional, Mexico, D.F. (Mexico)
2001-10-01
We studied the photo and cathodoluminescence of Silicon Rich Oxides (SRO) obtained by ion implant of Si in thermal oxides. Doses of 10{sup 1}6 cm{sup -}2 (low dose) and 10{sup 1}7 cm{sup -}2 (high dose) and implant energy of 150 keV were used. The films were annealed for 30, 60 and 180 minutes in nitrogen at 1100 Celsius degrees. The spectra show photo and cathodoluminescence emission in the visible range, the bands in the spectra change with the conditions of ion implant and annealing. The films without thermal treatment in both dose present photoluminescence bands around 1.9 eV (band B) and 2.4 eV (band C). With the thermal treatments, the band B disappears. In the case of the films with low dose, the band C shows a blue shift and a decrease in intensity. The high dose films have a band centered in 1.7 eV (band A) that increases its intensity with annealings. The cathodoluminescence bands in all the cases are in 2.7 eV (band D) and they present changes with the thermal treatments that it seems they depend on the variation in the implant parameters. [Spanish] Se estudian las propiedades de foto y la catodoluminiscencia de peliculas de oxidos de silicio ricos en Si (Silicon Rich Oxide SRO) obtenidas por implantacion ionica de Si en oxidos termicos. Se usaron dosis de 10{sup 1}6 cm{sup -}2 (dosis baja) y 10{sup 1}7 cm{sup -}2 (dosis alta) y energia de implantacion de 150 keV. Las peliculas se sometieron a tratamientos termicos por 30, 60 y 180 minutos en nitrogeno de 1100 grados centigrados. Se encontro emision foto y catodoluminiscente en el rango visible, las bandas en los espectros cambian con las condiciones de implantacion ionica y con los tratamientos termicos. Las peliculas sin tratamiento termico en ambas dosis presentan bandas de fotoluminiscencia alrededor de 1.9 eV (banda B) y 2.4 eV (banda C). Con los tratamientos termicos, la banda B desaparece. En el caso de las peliculas con dosis baja, la banda C muestra un corrimiento hacia el azul junto con una
-
Interface dependence of band offsets in lattice-matched isovalent heterojunctions
Lambrecht, Walter R. L.; Segall, Benjamin
1990-01-01
Using a previously developed self-consistent dipole theory, we find that the interface dependence of band offsets for lattice-matched isovalent heterojunction is generally small. Specifically, we find the difference between the (001) and (110) band offsets for the common-anion heterojunctions AlP/GaP, AlAs/GaAs, AlSb/GaSb, and CdTe/HgTe to be, at most, 0.02 eV. An investigation of the various details in the calculations leads to an error estimate of +/-0.03 eV; the differences are therefore insignificant. For the noncommon-anion systems, the difference between two different bonding configurations of the (001) interface is noted. Although the differences between the various interfaces are found to be slightly larger than for the common-anion cases, the only significant difference is found to occur between the In-Sb and Ga-As (001) interfaces, where it is 0.1 eV. In this case, the (110) band offset lies midway between the two.
-
On the influence of the tundra on the EnEV
International Nuclear Information System (INIS)
Genath, B.
2004-01-01
This extensive article discusses the European General Energy-Efficiency Guidelines for Buildings that are to be implemented in national legislation by 2006. This extensive article looks at questions concerning the implementation of these guidelines, which not only limit the amount of primary energy used for heating, but also that used for air-conditioning and lighting. The new regulations are compared with the existing German EnEV energy-efficiency regulations. The advantages and the weak points of the latter are discussed. Several special cases are quoted and improvements are suggested, including the adoption of the best part-implementations from existing national regulations. The interdisciplinary approach necessary is discussed. Also the effects of the EU-EnEV on emissions trading is looked at. The situation concerning CO 2 and global warming in Russia is examined in the light of emissions-trading efforts - and even the climatic pros and cons of letting the permafrost of the tundra melt are discussed
-
Otoacoustic emissions in young adults exposed to drums noise of a college band
Directory of Open Access Journals (Sweden)
Paula Botelho da Silva
Full Text Available ABSTRACT Purpose: to identify cochlear dysfunction and occurrence of tinnitus in young adults exposed to drums noise of a college band. Methods: the sample included 50 subjects: 25 musicians (study group and 25 non-musicians (control group. The procedures included anamnesis, pure tone audiometry, acoustic impedance and Transient Evoked Otoacoustic Emissions, Distortion Product Otoacoustic Emissions and Distortion Product Otoacoustic Emissions Input-Output function. Results: positive correlation between the occurrence of tinnitus and the variables exposure time and use of personal stereos was found. Overall, the study group showed significantly lower Transient Evoked Otoacoustic Emissions, when compared to the control group. In the study group, there was a tendency toward worse response in 6 kHz(f2 in Distortion Product Otoacoustic Emissions in both ears. The Distortion Product Otoacoustic Emissions Input-Output function did not differ between groups nor did its slope. Conclusion: in general, otoacoustic emissions were worse in noise-exposed young people (study group when compared to the unexposed (control group, indicating that the test may be important in early identification of cochlear changes.
-
Conduction band offset at the InN/GaN heterojunction
International Nuclear Information System (INIS)
Wang Kejia; Lian Chuanxin; Su Ning; Jena, Debdeep; Timler, John
2007-01-01
The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ∼0.94 eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95 eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be ΔE C =1.68±0.1 eV
-
Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition
International Nuclear Information System (INIS)
Wang Qingtao; Wang Guanzhong; Jie Jiansheng; Han Xinhai; Xu Bo; Hou, J.G.
2005-01-01
(001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 deg. C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (- 0.6∼- 0.8 V). When more negative potential (- 1.0∼- 1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials - 0.6∼- 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E g ) of the ZnO film prepared at - 1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH) 2 from the film after annealing
-
Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements
Energy Technology Data Exchange (ETDEWEB)
Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro
2017-04-01
Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.
-
EXAMINING THE BROADBAND EMISSION SPECTRUM OF WASP-19b: A NEW z-BAND ECLIPSE DETECTION
Energy Technology Data Exchange (ETDEWEB)
Zhou, George; Bayliss, Daniel D. R. [Research School of Astronomy and Astrophysics, Australian National University, Cotter Rd, Weston Creek, ACT 2611 (Australia); Kedziora-Chudczer, Lucyna; Bailey, Jeremy, E-mail: george@mso.anu.edu.au [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia)
2013-09-10
WASP-19b is one of the most irradiated hot-Jupiters known. Its secondary eclipse is the deepest of all transiting planets and has been measured in multiple optical and infrared bands. We obtained a z-band eclipse observation with a measured depth of 0.080% {+-} 0.029%, using the 2 m Faulkes Telescope South, which is consistent with the results of previous observations. We combined our measurement of the z-band eclipse with previous observations to explore atmosphere models of WASP-19b that are consistent with its broadband spectrum. We use the VSTAR radiative transfer code to examine the effect of varying pressure-temperature profiles and C/O abundance ratios on the emission spectrum of the planet. We find that models with super-solar carbon enrichment best match the observations, which is consistent with previous model retrieval studies. We also include upper atmosphere haze as another dimension in the interpretation of exoplanet emission spectra and find that particles <0.5 {mu}m in size are unlikely to be present in WASP-19b.
-
Slanger, T. G.; Pejaković, D. A.; Kostko, O.; Matsiev, D.; Kalogerakis, K. S.
2017-03-01
The terrestrial dayglow displays prominent emission features from the 0-0 and 1-1 bands of the O2 Atmospheric band system in the 760-780 nm region. We present an analysis of observations in this wavelength region recorded by the Space Shuttle during the Arizona Airglow Experiment. A major conclusion is that the dominant product of O(1D) + O2 energy transfer is O2(b, v = 1), a result that corroborates our previous laboratory studies. Moreover, critical to the interpretation of dayglow is the possible interference by N2 and N2+ bands in the 760-780 nm region, where the single-most important component is the N2 1PG 3-1 band that overlaps with the O2(b-X) 0-0 band. When present, this background must be accounted for to reveal the O2(b-X) 0-0 and 1-1 bands for altitudes at which the O2 and N2/N2+ emissions coincide. Finally, we exploit the very different collisional behavior of the two lowest O2(b) vibrational levels to outline a remote sensing technique that provides information on Atmospheric composition and temperature from space-based observations of the 0-0 and 1-1 O2 atmospheric bands.
-
Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom
2014-10-10
We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.
-
Model Development for MODIS Thermal Band Electronic Crosstalk
Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghonh; Brinkman, Jake; Keller, Graziela; Xiong, Xiaoxiong
2016-01-01
MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 m. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands developed substantial issues that cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 m and band 29 at 8.5 m increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk effect is evident in the near-monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. The development of an alternative approach is very helpful for independent verification.In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically to correct the Earth brightness temperature measurements. In the model development, the detectors nonlinear response is considered. The impact of the electronic crosstalk is assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detectors nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector non-linearity, and the ratio of Earth measurements between the sending and receiving bands. The correction of the electronic cross talk can be implemented empirically from the processed bias at different brightness temperature. The implementation
-
Electronic structures and band gaps of chains and sheets based on phenylacetylene units
International Nuclear Information System (INIS)
Kondo, Masakazu; Nozaki, Daijiro; Tachibana, Masamitsu; Yumura, Takashi; Yoshizawa, Kazunari
2005-01-01
We investigate the electronic structures of polymers composed of π-conjugated phenylacetylene (PA) units, m-PA-based and p-PA-based wires, at the extended Hueckel level of theory. It is demonstrated that these conjugated systems should have a variety of electric conductance. All of the one-dimensional (1D) chains and the two-dimensional (2D) sheet based on the m-PA unit are insulators with large band gaps of 2.56 eV because there is no effective orbital interaction with neighboring chains. On the other hand, p-PA-based 1D chains have relatively small band gaps that decrease with an increase in chain width (1.17-1.74 eV) and are semiconductive. The p-PA-based sheet called 'graphyne', a 2D-limit of the p-PA-based 1D chains, shows a small band gap of 0.89 eV. The variety of band electronic structures is discussed in terms of frontier crystal orbitals
-
L-Band Microwave Emission of Soil Freeze-Thaw Process in the Third Pole Environment
Zheng, Donghai; van der Velde, R.; Su, Z.; Zeng, Y.
2017-01-01
Soil freeze-thaw transition monitoring is essential for quantifying climate change and hydrologic dynamics over cold regions, for instance, the Third Pole. We investigate the L-band (1.4 GHz) microwave emission characteristics of soil freeze-thaw cycle via analysis of tower-based brightness
-
Guo, Yuzheng; Robertson, John
2017-09-01
We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.
-
Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy
International Nuclear Information System (INIS)
Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V.
2001-01-01
The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E c ) and at 415 K (0.9 below E c ); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E c known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E c is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species
-
Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy
Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S. V.
2001-10-01
The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below Ec) and at 415 K (0.9 below Ec); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below Ec known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below Ec is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species.
-
Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy
International Nuclear Information System (INIS)
Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V.
2004-01-01
The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E c ) and at 415 K (0.9 below E c ); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E c known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E c is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species. (author)
-
Band width and multiple-angle valence-state mapping of diamond
International Nuclear Information System (INIS)
Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.
1997-01-01
The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid's many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of ±1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84 degrees cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space
-
Band width and multiple-angle valence-state mapping of diamond
Energy Technology Data Exchange (ETDEWEB)
Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J. [Lawrence Berkeley National Lab., CA (United States)] [and others
1997-04-01
The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.
-
Strongly reduced band gap in NiMn2O4 due to cation exchange
International Nuclear Information System (INIS)
Huang, Jhih-Rong; Hsu, Han; Cheng, Ching
2014-01-01
NiMn 2 O 4 is extensively used as a basis material for temperature sensors due to its negative temperature coefficient of resistance (NTCR), which is commonly attributed to the hopping mechanism involving coexisting octahedral-site Mn 4+ and Mn 3+ . Using density-functional theory + Hubbard U calculations, we identify a ferrimagnetic inverse spinel phase as the collinear ground state of NiMn 2 O 4 . By a 12.5% cation exchange, a mixed phase with slightly higher energy can be constructed, accompanied by the formation of an impurity-like band in the original 1 eV band gap. This impurity-like band reduces the gap to 0.35 eV, suggesting a possible source of NTCR. - Highlights: • Density functional based calculations were used to study collinear phase of NiMn 2 O 4 . • The ground-state structure is a ferrimagnetic inverse spinel phase. • The tetrahedral and octahedral Mn cations have ferromagnetic interactions. • A 12.5% cation exchange introduces an impurity-like band in the original 1 eV gap. • The 0.35 eV gap suggests a source of negative temperature coefficient of resistance
-
Information on 'Shikoku EV Rally Festival 99' and analysis of participating EVs
Energy Technology Data Exchange (ETDEWEB)
Miyashita, K. [Naruto Univ. of Education, Takashima (Japan)
2000-07-01
A 3 day rally was held in August 1999 in the city of Shikoku, Japan to bring electric vehicles (EVs) to the public's attention. A total of 39 EVs from 3 production series participated. This included 29 EVs converted from internal combustion engine vehicles, 5 prototype EVs and 2 hybrid electric vehicles. Thirty seven of the EVs used lead-acid batteries, one used nickel-metal hydride batteries and one used lithium-ion batteries. Each one was charged using one outlet of 3 phase 200 V, 1 phase 200 V or 1 phase 100 V at temporary charging facilities. The 340 km course ran through the city and in mountainous regions. The EVs were driven according to normal traffic rules. At the end of the rally, each EV was evaluated for their performance, hill climbing ability, and re-charging time. Several of the converted EVs drove for more than 50 km through mountainous regions using lead-acid batteries. It was determined that the poor range of EVs can be improved by an efficient daily re-charge. refs.
-
Energy Technology Data Exchange (ETDEWEB)
Pienaar, J., E-mail: jac_pienaar@hotmail.com [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Meyer, W.E.; Auret, F.D.; Coelho, S.M.M. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa)
2012-05-15
Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy ({+-}80 eV) inductively coupled plasma (ICP) etching using Ar. The defect, named EP{sub 0.31}, had an energy level 0.31 eV below the conduction band. Models of Pons and Makram-Ebeid (1979) and Ganichev and Prettl (1997) , which describe emission due to phonon assisted tunneling, were fitted to the observed electric field dependence of the emission rate. The model of Pons and Makram-Ebeid fitted the measured emission rate more accurately than Ganichev and Prettl. However the model of Ganichev and Prettl has only two parameters, while the model of Pons and Makram-Ebeid has four. Both models showed a transition in the dominant emission mechanism from a weak electron-phonon coupling below 152.5 K to a strong electron-phonon coupling above 155 K. After the application of a {chi}{sup 2} goodness of fit test, it was determined that the model of Pons and Makram-Ebeid describes the data well, while that of Ganichev and Prettl does not.
-
Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application
Dwivedi, Neeraj; Kumar, Sushil; Dayal, Saurabh; Rauthan, C. M. S.; Panwar, O. S.; Malik, Hitendra K.
2012-10-01
In this work, self bias variation, nitrogen introduction and oxygen plasma (OP) treatment approaches have been used for tailoring the band gap of hydrogenated amorphous carbon (a-C:H) thin films. The band gap of a-C:H and modified a- C:H films is varied in the range from 1.25 eV to 3.45 eV, which is found to be nearly equal to the full solar spectrum (1 eV- 3.5 eV). Hence, such a-C:H and modified a-C:H films are found to be potential candidate for the development of full spectrum solar cells. Besides this, computer aided simulation with considering variable band gap a-C:H and modified a- C:H films as window layer for amorphous silicon p-i-n solar cells is also performed by AFORS-HET software and maximum efficiency as ~14 % is realized. Since a-C:H is hard material, hence a-C:H and modified a-C:H films as window layer may avoid the use of additional hard and protective coating particularly in n-i-p configuration.
-
Energy Technology Data Exchange (ETDEWEB)
Mosquera, Edgar, E-mail: edemova@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile); Pozo, Ignacio del, E-mail: ignacio.dpf@gmail.com [Facultad de Ciencias Naturales, Matemáticas y del Medio Ambiente, Universidad Tecnológica Metropolitana, Av. José Pedro Alessandri 1242, Santiago (Chile); Morel, Mauricio, E-mail: mmorel@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile)
2013-10-15
The structure and the optical band gap of CdO–ZnO nanocomposites were studied. Characterization using X-ray diffraction (XRD), transmission electron microscopy (TEM) and diffuse reflectance spectroscopy (DRS) analysis confirms that CdO phase is present in the nanocomposites. TEM analysis confirms the formation of spheroidal nanoparticles and nanorods. The particle size was calculated from Debey–Sherrer′s formula and corroborated by TEM images. FTIR spectroscopy shows residual organic materials (aromatic/Olefinic carbon) from nanocomposites surface. CdO content was modified in the nanocomposites in function of polyvinylalcohol (PVA) added. The optical band gap is found to be red shift from 3.21 eV to 3.11 eV with the increase of CdO content. Photoluminescence (PL) measurements reveal the existence of defects in the synthesized CdO–ZnO nanocomposites. - Graphical abstract: Optical properties of ZnO, CdO and ZnO/CdO nanoparticles. Display Omitted - Highlights: • TEM analysis confirms the presence of spherical nanoparticles and nanorods. • The CdO phase is present in the nanocomposites. • The band gap of the CdO–ZnO nanocomposites is slightly red shift with CdO content. • PL emission of CdO–ZnO nanocomposite are associated to structural defects.
-
International Nuclear Information System (INIS)
Norek, Małgorzata; Michalska-Domańska, Marta; Stępniowski, Wojciech J.; Ayala, Israel; Bombalska, Aneta; Budner, Bogusław
2013-01-01
The photoluminescence (PL) properties of tin oxide nanostructures are investigated. Three samples of different morphology, induced by deposition process and various geometrical features of nanoporous anodic aluminum oxide (AAO) substrate, are analyzed. X-ray photoelectronic spectroscopy (XPS) analysis reveals the presence of two forms of tin oxide on the surface of all studied samples: SnO and SnO 2 . The former form is typical for reduced surface with bridging oxygen atoms and every other row of in-plane oxygen atoms removed. The oxygen defects give rise to a strong emission in visible region. Two intense PL peaks are observed centered at about 540 (band I) and 620 (band II) nm. The origin of these bands was ascribed to the recombination of electrons from the conduction band (band I) and shallow traps levels (band II) to the surface oxygen vacancy levels. Upon deposition of Au nanoparticles on the top of tin oxide nanostructures the emission at 540 and 620 nm disappears and a new band (band III) occurs in the range >760 nm. The PL mechanism operating in the studied systems is discussed. The tin oxide/Au nanocomposites can be used as efficient multi-band light emitters in a wide (from visible to near infrared) wavelength range.
-
Luminescence in undoped CaYAl{sub 3}O{sub 7} produced via the Pechini method
Energy Technology Data Exchange (ETDEWEB)
Bispo, Giordano F.C., E-mail: gfredericoc@gmail.com [Physics Department, Federal University of Sergipe, 49100-000 São Cristovão, SE (Brazil); Andrade, Adriano B.; S Bezerra, Claudiane dos [Physics Department, Federal University of Sergipe, 49100-000 São Cristovão, SE (Brazil); Teixeira, Verônica C.; Galante, Douglas [Brazilian Synchrotron Light Laboratory, Brazilian Center for Research in Energy and Materials, 13083-970 Campinas, SP (Brazil); Valerio, Mário E.G. [Physics Department, Federal University of Sergipe, 49100-000 São Cristovão, SE (Brazil)
2017-02-15
The luminescent properties of CaYAl{sub 3}O{sub 7} (CYAM) were carried out in undoped powder samples produced via Pechini method. The thermal analysis combined with XRD measurements showed that 1000 °C/4 h is the best condition for the CYAM synthesis. Morphological analysis showed submicrometric particles with irregular shape. Photoluminescence (PL) emission and excitation spectra were studied with excitation in the ultraviolet and vacuum ultraviolet spectral region using synchrotron radiation. The CYAM band gap energy was measured and found to be around 6.8 eV. Low intense emission band around 4.4 eV, upon excitation at 6.5 eV, was assigned to the self-trapped excitons (STE) that are generated during the VUV excitation. Three main emission bands peaking at 2.57, 2.94 and 3.23 eV are responsible for most of the PL emission and radioluminescence (RL) emission in CYAM. Time-resolved measurements under pulsed 4.7 eV light showed that the PL decay curve is composed by 3 main processes with very short lifetime, smaller than 30 ns, and a small amount of long time constant process. Time-resolved RL measurements exciting with 4056 eV photons, above the Ca K edge, showed that the decay curve is composed by two processes with time constants around 27 and 130 ns and a small component due to a long decay constant bigger. All this features allowed the identification of the main emissions centres at 2.94 and 3.23 eV to the F{sup +} centres, while the emission centre at 2.57 eV is due to the F type centre.
-
Nature of the valence band states in Bi2(Ca, Sr, La)3Cu2O8
International Nuclear Information System (INIS)
Wells, B.O.; Lindberg, P.A.P.; Shen, Z.; Dessau, D.S.; Spicer, W.E.; Lindau, I.; Mitzi, D.B.; Kapitulnik, A.
1990-01-01
We have used photoemission spectroscopy to examine the symmetry of the occupied states of the valence band for the La doped superconductor Bi 2 (Ca, Sr, La) 3 Cu 2 O 8 . While the oxygen states near the bottom of the 7 eV wide valence band exhibit predominantly O 2p z symmetry, the states at the top of the valence band extending to the Fermi level are found to have primarily O 2p x and O 2p y character. We have also examined anomalous intensity enhancements in the valence band feature for photon energies near 18 eV. These enhancements, which occur at photon energies ranging from 15.8 to 18.0 eV for the different valence band features, are not consistent with either simple final state effects or direct O2s transitions to unoccupied O2p states
-
EV City Casebook: A Look At The Global Electric Vehicle Movement
Energy Technology Data Exchange (ETDEWEB)
NONE
2012-07-01
Electric vehicles (EVs) hold the potential of transforming the way the world moves. EVs can increase energy security by diversifying the fuel mix and decreasing dependence on petroleum, while also reducing emissions of greenhouse gases and other pollutants. Just as important, EVs can unlock innovation and create new advanced industries that spur job growth and enhance economic prosperity. However, the mass deployment of EVs will require transportation systems capable of integrating and fostering this new technology. To accelerate this transition, cities and metropolitan regions around the world are creating EV-friendly ecosystems and building the foundation for widespread adoption. In recognition of the importance of urban areas in the introduction and scale-up of electric vehicles, the EV City Casebook presents informative case studies on city and regional EV deployment efforts around the world. These case studies are illustrative examples of how pioneering cities are preparing the ground for mass market EV deployment. They offer both qualitative and quantitative information on cities' EV goals, progress, policies, incentives, and lessons learned to date. The purpose of the EV City Casebook is to share experiences on EV demonstration and deployment, identify challenges and opportunities, and highlight best practices for creating thriving EV ecosystems. These studies seek to enhance understanding of the most effective policy measures to foster the uptake of electric vehicles in urban areas. The cities represented here are actively engaging in a variety of initiatives that share the goal of accelerating EV adoption. This publication is the result of an effort to coordinate those initiatives and provide a global perspective on the electric vehicle movement. This international knowledge-sharing network consists of the Electric Vehicles Initiative (EVI), a multi-government initiative of the Clean Energy Ministerial; Project Get Ready, a Rocky Mountain Institute (RMI
-
EV City Casebook: A Look At The Global Electric Vehicle Movement
Energy Technology Data Exchange (ETDEWEB)
NONE
2012-07-01
Electric vehicles (EVs) hold the potential of transforming the way the world moves. EVs can increase energy security by diversifying the fuel mix and decreasing dependence on petroleum, while also reducing emissions of greenhouse gases and other pollutants. Just as important, EVs can unlock innovation and create new advanced industries that spur job growth and enhance economic prosperity. However, the mass deployment of EVs will require transportation systems capable of integrating and fostering this new technology. To accelerate this transition, cities and metropolitan regions around the world are creating EV-friendly ecosystems and building the foundation for widespread adoption. In recognition of the importance of urban areas in the introduction and scale-up of electric vehicles, the EV City Casebook presents informative case studies on city and regional EV deployment efforts around the world. These case studies are illustrative examples of how pioneering cities are preparing the ground for mass market EV deployment. They offer both qualitative and quantitative information on cities' EV goals, progress, policies, incentives, and lessons learned to date. The purpose of the EV City Casebook is to share experiences on EV demonstration and deployment, identify challenges and opportunities, and highlight best practices for creating thriving EV ecosystems. These studies seek to enhance understanding of the most effective policy measures to foster the uptake of electric vehicles in urban areas. The cities represented here are actively engaging in a variety of initiatives that share the goal of accelerating EV adoption. This publication is the result of an effort to coordinate those initiatives and provide a global perspective on the electric vehicle movement. This international knowledge-sharing network consists of the Electric Vehicles Initiative (EVI), a multi-government initiative of the Clean Energy Ministerial; Project Get Ready, a Rocky Mountain Institute
-
Advancing non-equilibrium ARPES experiments by a 9.3 eV coherent ultrafast photon source
Energy Technology Data Exchange (ETDEWEB)
Cilento, F., E-mail: federico.cilento@elettra.eu [Elettra – Sincrotrone Trieste S.C.p.A., Strada Statale 14, km 163.5, Trieste 34149 (Italy); C.N.R. – I.O.M., Strada Statale 14, km 163.5, Trieste 34149 (Italy); Crepaldi, A. [Elettra – Sincrotrone Trieste S.C.p.A., Strada Statale 14, km 163.5, Trieste 34149 (Italy); Manzoni, G.; Sterzi, A. [Universitá degli Studi di Trieste, Via A. Valerio 2, Trieste 34127 (Italy); Zacchigna, M. [C.N.R. – I.O.M., Strada Statale 14, km 163.5, Trieste 34149 (Italy); Bugnon, Ph.; Berger, H. [Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Parmigiani, F. [Elettra – Sincrotrone Trieste S.C.p.A., Strada Statale 14, km 163.5, Trieste 34149 (Italy); Universitá degli Studi di Trieste, Via A. Valerio 2, Trieste 34127 (Italy); International Faculty, University of Köln, 50937 Köln (Germany)
2016-02-15
The quest for investigating the non-equilibrium dynamics of the band structure of strongly-correlated materials over their entire Brillouin zone is a primary objective. However, the actual ultrafast UV light sources are not suitable for addressing several critical questions in the field. Here we report on a novel light source generating sub-250 fs, 9.3 eV photon energy light pulses at 250 kHz repetition rate, obtained via third-harmonic generation in Xe of frequency-doubled 50 fs laser pulses at 1.55 eV. By reporting the measured band dispersion of a Cu(111) crystal and the non-equilibrium dynamics of the Bi{sub 2}Se{sub 3} topological insulator, we prove that this source is suitable for studying the non-equilibrium dynamics of the entire Fermi surface of several complex materials, with high signal statistics and limited space-charge effect.
-
MODIS/Aqua Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid V006
National Aeronautics and Space Administration — MODIS/Aqua Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid (MYD21A2.006). A new suite of MODIS Land Surface Temperature (LST) and Emissivity...
-
MODIS/Terra Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid V006
National Aeronautics and Space Administration — MODIS/Terra Land Surface Temperature/3-Band Emissivity 8-Day L3 Global 1km SIN Grid (MOD21A2.006). A new suite of MODIS Land Surface Temperature (LST) and Emissivity...
-
Determination of a natural valence-band offset - The case of HgTe and CdTe
Shih, C. K.; Spicer, W. E.
1987-01-01
A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.
-
Hadmojo, Wisnu Tantyo; Wibowo, Febrian Tri Adhi; Ryu, Du Yeol; Jung, In Hwan; Jang, Sung-Yeon
2017-09-27
Although the combination of wide band gap polymer donors and narrow band gap small-molecule acceptors achieved state-of-the-art performance as bulk heterojunction (BHJ) active layers for organic solar cells, there have been only several of the wide band gap polymers that actually realized high-efficiency devices over >10%. Herein, we developed high-efficiency, low-energy-loss fullerene-free organic solar cells using a weakly crystalline wide band gap polymer donor, PBDTTPD-HT, and a nonfullerene small-molecule acceptor, ITIC. The excessive intermolecular stacking of ITIC is efficiently suppressed by the miscibility with PBDTTPD-HT, which led to a well-balanced nanomorphology in the PBDTTPD-HT/ITIC BHJ active films. The favorable optical, electronic, and energetic properties of PBDTTPD-HT with respect to ITIC achieved panchromatic photon-to-current conversion with a remarkably low energy loss (0.59 eV).
-
Ab initio calculation of band alignment of epitaxial La2O3 on Si(111 substrate
Directory of Open Access Journals (Sweden)
Alberto Debernardi
2015-08-01
Full Text Available By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant (k oxide, the hexagonal La2O3 epitaxially grown with (0001-orientation on Si (111 substrate. We found that for La2O3 both the dielectric constant along the growth direction and the band gap are larger in the epitaxial film than in the bulk. By super-cell techniques we have computed the band alignment of the junction finding a valence band offset and a conduction band offset of ~1.6 eV and ~1.7 eV respectively. We demonstrate that the band alignment can be engineered by δ-doping the interface: our simulations show that, by doping the interface with S or Se monolayer, the valence (conduction band offset increases (decreases of about 0.5 eV without the formation of spurious electronic states in the semiconductor band-gap. The simulation of the critical thickness of pseudomorphic Lanthana film complete the work. Our results are relevant for the realization of a new generation of devices based on ultra-scaled complementary metal oxides semiconductors (CMOS technology.
-
Large area modules based on low band gap polymers
DEFF Research Database (Denmark)
Bundgaard, Eva; Krebs, Frederik C
2010-01-01
The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed...
-
Band offset in zinc oxy-sulfide/cubic-tin sulfide interface from X-ray photoelectron spectroscopy
Energy Technology Data Exchange (ETDEWEB)
Sanal, K.C.; Nair, P.K.; Nair, M.T.S., E-mail: mtsn@ier.unam.mx
2017-02-28
Highlights: • Zinc oxy-sulfide thin films, 175–240 nm, deposited by rf-sputtering from targets of ZnO + ZnS. • Oxygen content in thin films is enhanced 3–4 times compared with that in ZnO:ZnS targets. • Thin film ZnO{sub x}S{sub 1−x} with x = 0.88–0.27 and optical band gap 2.8–3.2 eV is suitable for solar cells. • The conduction band offset with SnS of cubic structure studied by XPS are +0.41 to −0.28 eV. - Abstract: Zinc oxy-sulfide, ZnO{sub x}S{sub 1−x}, has been found to provide better band alignment in thin film solar cells of tin sulfide of orthorhombic crystalline structure. Here we examine ZnO{sub x}S{sub 1−x}/SnS-CUB interface, in which the ZnO{sub x}S{sub 1−x} thin film was deposited by radio frequency (rf) magnetron sputtering on SnS thin film of cubic (CUB) crystalline structure with a band gap (E{sub g}) of 1.72 eV, obtained via chemical deposition. X-ray photoelectron spectroscopy provides the valence band maxima of the materials and hence places the conduction band offset of 0.41 eV for SnS-CUB/ZnO{sub 0.27}S{sub 0.73} and −0.28 eV for SnS-CUB/ZnO{sub 0.88}S{sub 0.12} interfaces. Thin films of ZnO{sub x}S{sub 1−x} with 175–240 nm in thickness were deposited from targets prepared with different ZnO to ZnS molar ratios. With the target of molar ratio of 1:13.4, the thin films are of composition ZnO{sub 0.27}S{sub 0.73} with hexagonal crystalline structure and with that of 1:1.7 ratio, it is ZnO{sub 0.88}S{sub 0.12}. The optical band gap of the ZnO{sub x}S{sub 1−x} thin films varies from 2.90 eV to 3.21 eV as the sulfur to zinc ratio in the film increases from 0.12:1 to 0.73:1 as determined from X-ray diffraction patterns. Thus, band offsets sought for absorber materials and zinc oxy-sulfide in solar cells may be achieved through a choice of ZnO:ZnS ratio in the sputtering target.
-
Photoluminescence properties of boron doped InSe single crystals
International Nuclear Information System (INIS)
Ertap, H.; Bacıoğlu, A.; Karabulut, M.
2015-01-01
Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed
-
Development of battery management systems (BMS for electric vehicles (EVs in Malaysia
Directory of Open Access Journals (Sweden)
Salehen P.M.W.
2017-01-01
Full Text Available Battery Management Systems (BMS is an electronic devices component, which is a vital fundamental device connected between the charger and the battery of the hybrid or electric vehicle (EV systems. Thus, BMS significantly enable for safety protection and reliable battery management by performing of monitoring charge control, state evaluation, reporting the data and functionalities cell balancing. To date, 97.1% of Malaysian CO2 emissions are mainly caused by transportation activities and the numbers will keep rising as numbers of registered car increase close up to 1 million yearly; double the amounts in the last two decades. The uncertainty of a battery’s performance poses a challenge to predict the extended range of EVs, which need BMS implementation of optimization of optimum power management. Hence, using MATLAB/SIMULINK software is one of the potential methods of BMS optimization with power generated by Hybrid Energy Storage system of lithium-ion battery. Therefore, this paper address through reviewing previous literatures initially focuses on the BMS optimization for EVs (car in Malaysia as prognostic technology model improvement on performance management of EVs.
-
Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy
Energy Technology Data Exchange (ETDEWEB)
Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V. E-mail: svb@physics.unipune.ernet.in
2001-10-01
The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E{sub c}) and at 415 K (0.9 below E{sub c}); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E{sub c} known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E{sub c} is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species.
-
Grain size dependent optical band gap of CdI2 films
Indian Academy of Sciences (India)
Unknown
absorption data near band edge can be fitted to an indirect band gap of 3 eV. The dependence of band gap ... while to carry out the optical studies on CdI2 films in order to .... replotted as (αhν)1/2 vs hν to determine indirect gap as shown in the ...
-
Measurement of ZnO/Al2O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy
International Nuclear Information System (INIS)
Lei Hong-Wen; Zhang Hong; Wang Xue-Min; Zhao Yan; Yan Da-Wei; Jiang Zhong-Qian; Yao Gang; Zeng Ti-Xian; Wu Wei-Dong
2013-01-01
ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy. The band offsets of the ZnO/Al 2 O 3 heterojunction are studied by in situ x-ray photoelectron spectroscopy. The valence band of Al 2 O 3 is found to be 3.59±0.05eV below that of ZnO. Together with the resulting conduction band offset of 2.04±0.05eV, this indicates that a type-I staggered band line exists at the ZnO/Al 2 O 3 heterojunction
-
Modeling charged defects inside density functional theory band gaps
International Nuclear Information System (INIS)
Schultz, Peter A.; Edwards, Arthur H.
2014-01-01
Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem
-
Red shift of near band edge emission in cerium implanted GaN
International Nuclear Information System (INIS)
Majid, Abdul; Ali, Akbar
2009-01-01
Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.
-
Red shift of near band edge emission in cerium implanted GaN
Energy Technology Data Exchange (ETDEWEB)
Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)
2009-02-21
Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.
-
Energy Technology Data Exchange (ETDEWEB)
Xu, Kaiqiang [College of Material Science and Engineering, Hunan University, Changsha, 410082 (China); Xu, Difa, E-mail: xudifa@sina.com [Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China); Zhang, Xiangchao; Luo, Zhuo; Wang, Yutang [Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China); Zhang, Shiying, E-mail: cdzhangshiying@163.com [College of Material Science and Engineering, Hunan University, Changsha, 410082 (China); Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University, Changsha, 410022 (China)
2017-01-01
Highlights: • The interstitial nitrogen doping into LiInO{sub 2} is achieved at low temperature. • The band gap narrowing to an extent of 2.8 eV from 3.5 eV is observed. • The doping favours charge carrier separation and photocatalytic activity. • Superoxide radical is the dominant active specie in the pollutant degradation. - Abstract: Element doping is a promising strategy to improve the photo-response and photocatalytic activity of semiconductor photocatalyst with a wide band gap. To reduce the band gap of LiInO{sub 2} that is considered as a novel photocatalyst, nitrogen-doped LiInO{sub 2} (N-LiInO{sub 2}) is successfully fabricated by treating LiInO{sub 2} and urea at 200 °C. It is found that interstitial instead of substitutional configurations are formed in the crystal structure of N-LiInO{sub 2} due to the low-treating temperature and rich-oxygen conditions. The interstitial N-doping forms a doping state with 0.6 eV above the valence band maximum and a defect state with 0.1 eV below the conduction band minimum, reducing the band gap of LiInO{sub 2} from 3.5 to 2.8 eV. N-LiInO{sub 2} exhibits higher photocatalytic activity towards methylene blue (MB) degradation under 380 nm light irradiation, which is 1.4 times that of pure LiInO{sub 2}. The enhanced photocatalytic activity of N-LiInO{sub 2} is attributed to the extended light absorption and the improved charge carrier separation, which result in more reactive species participating in the photcatalytic process. This work provides a further understanding on tuning the band structure of semiconductor photocatalyst by N-doping strategies.
-
Studies on keV and eV electrons in solids
International Nuclear Information System (INIS)
Schou, J.
1979-10-01
The interaction between keV or eV electrons and solids was studied. The results presented mostly concern problems in connection with electron irradiation of solids, but to some extent they also include ion-induced secondary electron emission. The experiments were mainly performed on solidified gases using 1 - 3 keV electrons. The projected range of electrons was determined in solid hydrogen, deuterium and nitrogen. The true secondary electron emission coefficient and the electron reflection coefficient of solid hydrogen, deuterium and nitrogen were measured. The escape depth of the true secondary electrons in nitrogen was determined. The angular dependence of both the reflection coefficient and the true secondary electron emission coefficient of solid hydrogen and deuterium was investigated. Both ion- and electron-induced secondary electron emission were treated theoretically on the basis of ionization cascade theory. (Auth.)
-
Energy Technology Data Exchange (ETDEWEB)
Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London, Canada N6A 3K7 (Canada)]. E-mail: msingh@uwo.ca
2007-03-26
We have investigated the switching mechanism due to the spontaneous emission cancellation in a photonic band gap (PBG) material doped with an ensemble of four-level nano-particles. The effect of the dipole-dipole interaction has also been studied. The linear susceptibility has been calculated in the mean field theory. Numerical simulations for the imaginary susceptibility are performed for a PBG material which is made from periodic dielectric spheres. It is predicted that the system can be switched between the absorbing state and the non-absorbing state by changing the resonance energy within the energy bands of the photonic band gap material.0.
-
Radioluminescence of synthetic quartz related to alkali ions
Energy Technology Data Exchange (ETDEWEB)
Martini, M., E-mail: m.martini@unimib.it [Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy); INFN-Sezione di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy); Fasoli, M. [Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy); Galli, A. [Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy); Istituto di Fotonica e Nanostrutture, IFN-CNR (Italy); Villa, I. [Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy); Guibert, P. [IRAMAT-CRP2A (Institut de recherche sur les Archeomateriaux), UMR no. 5060, CNRS-Universite Bordeaux III, F-33607 Pessac (France)
2012-04-15
The radioluminescence (RL) of synthetic quartzes (GEMMA Quartz and Crystal Company) has been measured at room temperature. Some samples were treated by electrodiffusion ('sweeping') in order to change the concentrations of alkali ions, mainly Li{sup +} and Na{sup +}, which in quartz are known to be linked to Al ions, substitutional for Si ions. The RL emission spectra show evidence of a role of alkali ions in affecting some specific emissions. All the spectra could be analysed as composed of four bands in the blue and UV region. Specifically, the well known blue emission at around 470 nm was seen to be composed by two bands at 430 nm (2.86 eV) and at 485 nm (2.53 eV). Effects of irradiation, during the RL measurements, were clearly seen only in the 'Li swept in' sample, namely an increase in the 485 nm band intensity and a decrease in the 430 nm band one. The previously reported UV emission was detected at 355 nm (3.44 eV) in all the samples, being the most intense band in the 'swept out' sample. A further UV emission was detected at 315 nm (3.94 eV), more intense in untreated samples. Possible assignments of the detected emission bands are discussed in relation to the defects of quartz, specifically focusing on the Al centres that are most affected by sweeping procedures. - Highlights: Black-Right-Pointing-Pointer Contribution to the understanding of relationships between defects in quartz and luminescence emissions. Black-Right-Pointing-Pointer Role of charge compensators at substitutional Al sites in the optical properties of quartz. Black-Right-Pointing-Pointer Evidence of the double nature of the 'blue emission' (around 470 nm).
-
Kutepov, A. A.; Feofilov, A. G.; Manuilova, R. O.; Yankovsky, V. A.; Rezac, L.; Pesnell, W. D.; Goldberg, R. A.
2008-01-01
The Accelerated Lambda Iteration (ALI) technique was developed in stellar astrophysics at the beginning of 1990s for solving the non-LTE radiative transfer problem in atomic lines and multiplets in stellar atmospheres. It was later successfully applied to modeling the non-LTE emissions and radiative cooling/heating in the vibrational-rotational bands of molecules in planetary atmospheres. Similar to the standard lambda iterations ALI operates with the matrices of minimal dimension. However, it provides higher convergence rate and stability due to removing from the iterating process the photons trapped in the optically thick line cores. In the current ALI-ARMS (ALI for Atmospheric Radiation and Molecular Spectra) code version additional acceleration of calculations is provided by utilizing the opacity distribution function (ODF) approach and "decoupling". The former allows replacing the band branches by single lines of special shape, whereas the latter treats non-linearity caused by strong near-resonant vibration-vibrational level coupling without additional linearizing the statistical equilibrium equations. Latest code application for the non-LTE diagnostics of the molecular band emissions of Earth's and Martian atmospheres as well as for the non-LTE IR cooling/heating calculations are discussed.
-
Zhou, Xue; Li, Mingzhu; Wang, Kang; Li, Huizeng; Li, Yanan; Li, Chang; Yan, Yongli; Zhao, Yongsheng; Song, Yanlin
2018-03-25
Stimulated emission in perovskite-embedded polymer opal structures is investigated. A polymer opal structure is filled with a perovskite, and perovskite photonic crystals are prepared. The spontaneous emission of the perovskite embedded in the polymer opal structures exhibits clear signatures of amplified spontaneous emission (ASE) via gain modulation. The difference in refractive-index contrast between the perovskite and the polymer opal is large enough for retaining photonic-crystals properties. The photonic band gap has a strong effect on the fluorescence emission intensity and lifetime. The stimulated emission spectrum exhibits a narrow ASE rather than a wide fluorescence peak in the thin film. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
-
Emission properties of aluminium-lithium alloy
International Nuclear Information System (INIS)
Bondarenko, G.G.; Shishkov, A.V.
1995-01-01
High secondary emission properties at comparatively low operation temperatures were obtained when investigating aluminum-lithium alloy Al - 2.2 mass % Li. The maximal value of the coefficient of secondary electron emission for alloy, activated under optimal conditions, is achieved at comparatively low energy of primary electrons, equal to 600 eV. Low value of the first critical potential (15 ± 2 eV) was obtained. It is important for operation of secondary emission cathodes. 12 refs.; 4 figs
-
International Nuclear Information System (INIS)
Li, Yapeng; Fu, Li; Sun, Jie; Ibrahim, Kurash; Wang, Jia-ou
2016-01-01
Highlights: • The valence band maximum of ITO film and MIT were measured to be 1.6 eV and 0.6 eV, respectively. • The concentration of In element presented a trend of increasing first and then decreasing from MIT to ITO. • The valence band offsets of the ITO/MIT(1 1 0) heterojunction was confirmed to be a type-II band alignment phenomenon. - Abstract: The Indium Tin Oxide (ITO) film was deposited on the surface of Hg_3In_2Te_6 (short for MIT) (1 1 0) for the fabrication of ITO/MIT(1 1 0) heterojunction by using the pulsed laser deposition method. In situ X-ray photoelectron spectroscopy was utilized to examine the band offsets and core level of ITO/MIT(1 1 0) heterojunctions. The result showed that the valence band maximum of ITO films and MIT(1 1 0) were 1.6 eV and 0.6 eV, respectively. Meanwhile, it was found that the binding energy of Te 3d, Sn 3d and Hg 4f remained unchanged during the ITO deposition process. However, the binding energy of O 1s and In 3d_5_/_2 increased about 0.3 eV and 0.2 eV, respectively, with the thickness increasing of ITO film from 3.5 nm to 5 nm. This may due to the elements diffusion at the interface region during the film growing process. According to the core level spectrum, it can be speculated that no significant chemical reaction occurred at the interface of ITO/MIT(1 1 0). In addition, the valence band offset of the ITO/MIT(1 1 0) heterojunction can be calculated to be −1 ± 0.15 eV by the means of the photoelectron spectroscopy methods. The conduction band offset is deduced to be −3.96 ± 0.15 eV from the known valence band offset value, indicating that the band offsets of ITO/MIT(1 1 0) heterojunction is a type-II band alignment.
-
EV Charging Analysis with High EV Penetration in the Nordic Region
DEFF Research Database (Denmark)
Liu, Zhaoxi; Wu, Qiuwei
This report covers the driving pattern analysis and the electric vehicle (EV) charging ananlysis of Denmark, Sweden, Norway and Finland. The contents in the report are driving pattern analysis of the passenger cars and electrical charging load profiles of EVs based on the analyzed driving patterns...
-
Detection of Time Lags between Quasar Continuum Emission Bands Based On Pan-STARRS Light Curves
Energy Technology Data Exchange (ETDEWEB)
Jiang, Yan-Fei [Kavli Institute for Theoretical Physics, University of California, Santa Barbara, CA 93106 (United States); Green, Paul J.; Pancoast, Anna; MacLeod, Chelsea L. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Greene, Jenny E. [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States); Morganson, Eric; Shen, Yue [Department of Astronomy, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Anderson, Scott F.; Ruan, John J. [Department of Astronomy, University of Washington, Box 351580, Seattle, WA 98195 (United States); Brandt, W. N.; Grier, C. J. [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); Rix, H.-W. [Max Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Protopapas, Pavlos [Institute for Applied Computational Science, John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138 (United States); Scott, Caroline [Astrophysics, Imperial College London, Blackett Laboratory, London SW7 2AZ (United Kingdom); Burgett, W. S.; Hodapp, K. W.; Huber, M. E.; Kaiser, N.; Kudritzki, R. P.; Magnier, E. A. [Institute for Astronomy, University of Hawaii, 2680 Woodlawn Drive, Honolulu HI 96822 (United States); and others
2017-02-20
We study the time lags between the continuum emission of quasars at different wavelengths, based on more than four years of multi-band ( g , r , i , z ) light curves in the Pan-STARRS Medium Deep Fields. As photons from different bands emerge from different radial ranges in the accretion disk, the lags constrain the sizes of the accretion disks. We select 240 quasars with redshifts of z ≈ 1 or z ≈ 0.3 that are relatively emission-line free. The light curves are sampled from day to month timescales, which makes it possible to detect lags on the scale of the light crossing time of the accretion disks. With the code JAVELIN , we detect typical lags of several days in the rest frame between the g band and the riz bands. The detected lags are ∼2–3 times larger than the light crossing time estimated from the standard thin disk model, consistent with the recently measured lag in NGC 5548 and microlensing measurements of quasars. The lags in our sample are found to increase with increasing luminosity. Furthermore, the increase in lags going from g − r to g − i and then to g − z is slower than predicted in the thin disk model, particularly for high-luminosity quasars. The radial temperature profile in the disk must be different from what is assumed. We also find evidence that the lags decrease with increasing line ratios between ultraviolet Fe ii lines and Mg ii, which may point to changes in the accretion disk structure at higher metallicity.
-
Spontaneous emission spectrum from a V-type three-level atom in a double-band photonic crystal
International Nuclear Information System (INIS)
Zhang Han Zhuang; Tang Sing Hai; Dong Po; He Jun
2002-01-01
The spontaneous emission spectrum from a V-type three-level atom embedded in a double-band photonic band gap (PBG) material has been investigated for the first time. Most interestingly it is shown that there is not only a black dark line, but also a narrow spontaneous line near the edges of the double photonic band. The positions of the dark line and narrow spontaneous line are near the transition from an empty upper level to a lower level. The lines stem from destructive and constructive quantum interferences, which induce population transfer between the two upper levels, in the PBG reservoirs. The effects of system parameters on the interference have been discussed in detail
-
NANO-BATTERY TECHNOLOGY FOR EV-HEV PANEL: A PIONEERING STUDY
Directory of Open Access Journals (Sweden)
Ataur Rahman
2015-11-01
Full Text Available Global trends toward CO2 reduction and resource efficiency have significantly increased the importance of lightweight materials for automobile original equipment manufacturers (OEM. CO2 reduction is a fundamental driver for a more lightweight automobile. The introduction of Electrical Vehicles (EVs is one initiative towards this end. However EVs are currently facing several weaknesses: limited driving range, battery pack heaviness, lack of safety and thermal control, high cost, and overall limited efficiency. This study presents a panel-style nano-battery technology built into an EV with CuO filler solid polymer electrolyte (SPE sandwiched by carbon fiber (CF and lithium (Li plate. In addition to this, an aluminum laminated polypropylene film is used as the electromagnetic compatibility (EMC shield. The proposed battery body panel of the EV would reduce the car weight by about 20%, with a charge and discharge capacity of 1.5 kWh (10% of car total power requirement, and provide the heat insulation for the car which would save about 10% power consumption of the air conditioning system. Therefore, the EV would be benefited by 30% in terms of energy reduction by using the proposed body. Furthermore, the proposed body is considered environmental-friendly since it is recyclable for use in a new product. However, the main limiting factors of the SPE are its thermal behavior and moderate ionic conductivity at low temperatures. The SPE temperature is maintained by controlling the battery panel charging/discharge rate. It is expected that the proposed panel-style nano-battery use in an EV would save up to 6.00 kWh in battery energy, equivalent to 2.81 liters of petrol and prevent 3.081 kg of CO2 emission for a travel distance of 100 km. KEYWORDS: epoxy resin; carbon fiber; lithium thin plate; energy generation; solid electrolyte battery
-
Theoretical studies on band structure and optical properties of 3C-SiC by FPLAPW
International Nuclear Information System (INIS)
Xu, P.; Xie, C.; Xu, F.; Pan, H.
2004-01-01
Full text: SiC has attracted more interests because of its great technological importance in microelectronic and photoelectronic devices. We have studied the band structure and optical properties of 3C-SiC by using a Full Potential Linearized Augmented Plane Waves (FPLAPW) method. The partial density of states (DOS) of Si and C atoms as well as the band structure of 3C-SiC are presented. The calculated band gap is 1.30eV, which is much less than the experimental value. It is attributed to a deficiency of the local density theory. The imaginary part of the dielectric function has been obtained directly from the band structure calculation. With the band gap correction, the real part of the dielectric function has been derived from the imaginary part by Kramers Kronig (K-K) dispersion relationship. The calculated results are in good agreement with the results measured by Petalas et al. by using ultraviolet spectroscopic ellipsometry in the photon energy range of 5eV-10eV. The band-to-band transition can be identified from the critical points exhibited in the calculated dielectric function, which is consistent with the experimental results of Petalas et al. The refractive index, extinction coefficient and reflectivity have also been calculated from obtained dielectric function, which are in agreement with the experimental results of Logothetidis and Lambrecht
-
Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3
Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito
2017-07-01
The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.
-
Band gap evaluations of metal-inserted titania nanomaterials
International Nuclear Information System (INIS)
Bashir, Sajid; Liu, Jingbo; Zhang Hui; Sun Xuhui; Guo Jinghua
2013-01-01
The electronic and crystalline properties of iron-inserted titania (Fe x Ti 1−x O 2 ) nanoparticles were measured using synchrotron-based soft X-ray spectroscopy and high-temperature X-ray powder diffraction (HT-XRD). The data from X-ray absorption and emission spectroscopy were used to examine occupied and unoccupied densities of states for O 2p and Ti/Fe 3d hybrid orbital characteristics. It was found that Fe 3+ insertion resulted in an up-shift of the band gap from 3.20 to 3.46 eV. This observation reflected site occupancy in the TiO 2 lattice by Fe dopant ions. From HT-XRD Rietveld analysis, Ti occupancy was found to be 0.92 and oxygen 1.00. In addition, the crystal structure remained anatase within a temperature range of 25–800 °C, while the lattice distortion increased due to thermal expansion.
-
Hybrid density functional theory study of Cu(In1−xGaxSe2 band structure for solar cell application
Directory of Open Access Journals (Sweden)
Xu-Dong Chen
2014-08-01
Full Text Available Cu(In1−xGaxSe2 (CIGS alloy based thin film photovoltaic solar cells have attracted more and more attention due to its large optical absorption coefficient, long term stability, low cost and high efficiency. However, the previous theoretical investigation of this material with first principle calculation cannot fulfill the requirement of experimental development, especially the accurate description of band structure and density of states. In this work, we use first principle calculation based on hybrid density functional theory to investigate the feature of CIGS, with B3LYP applied in the CuIn1−xGaxSe2 stimulation of the band structure and density of states. We report the simulation of the lattice parameter, band gap and chemical composition. The band gaps of CuGaSe2, CuIn0.25Ga0.75Se2, CuIn0.5Ga0.5Se2, CuIn0.75Ga0.25Se2 and CuInSe2 are obtained as 1.568 eV, 1.445 eV, 1.416 eV, 1.275 eV and 1.205 eV according to our calculation, which agree well with the available experimental values. The band structure of CIGS is also in accordance with the current theory.
-
Yan, Baojun; Liu, Shulin; Yang, Yuzhen; Heng, Yuekun
2016-05-01
Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn0.8Al0.2O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn0.8Al0.2O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔEV) and conduction band offset (ΔEC) for the interface of the MgO/Zn0.8Al0.2O heterostructure have been constructed. An accurate value of ΔEV = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn0.8Al0.2O, a type-II heterojunction with a ΔEC of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.
-
Directory of Open Access Journals (Sweden)
Li Zhiwei
2011-01-01
Full Text Available Abstract The valence band offset (VBO of wurtzite indium nitride/strontium titanate (InN/SrTiO3 heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.
-
Optical constants and band edge of amorphous zinc oxide thin films
International Nuclear Information System (INIS)
Khoshman, Jebreel M.; Kordesch, Martin E.
2007-01-01
The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV
-
Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F
2016-08-10
Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.
-
EV Portfolio Management and Grid Impact Study
DEFF Research Database (Denmark)
Wu, Qiuwei; Jensen, Jakob Munch; Hansen, Lars Henrik
2009-01-01
is to determine the day‐ahead charging schedules of a fleet of EVs in order to minimize the EV charging cost with EV energy constraints taken into account. In order to investigate the benefits of the spot price based EV charging scenario, two more charging scenarios have been studied as well, i.e. plug......The EV portfolio management is to develop an EV charging management algorithm in order to determine EV charging schedules with the goal of utilizing renewalbe energy production for EV charging as much as possible and ensuring that EV energy requirements for driving needs are met. According...
-
Experimental results and modeling of a dynamic hohlraum on SATURN
International Nuclear Information System (INIS)
Derzon, M.S.; Allshouse, G.O.; Deeney, C.; Leeper, R.J.; Nash, T.J.; Matuska, W.; Peterson, D.L.; MacFarlane, J.J.; Ryutov, D.D.
1998-06-01
Experiments were performed at SATURN, a high current z-pinch, to explore the feasibility of creating a hohlraum by imploding a tungsten wire array onto a low-density foam. Emission measurements in the 200--280 eV energy band were consistent with a 110--135 eV Planckian before the target shock heated, or stagnated, on-axis. Peak pinch radiation temperatures of nominally 160 eV were obtained. Measured early time x-ray emission histories and temperature estimates agree well with modeled performance in the 200--280 eV band using a 2D radiation magneto-hydrodynamics code. However, significant differences are observed in comparisons of the x-ray images and 2D simulations
-
Electric vehicles in China: emissions and health impacts.
Ji, Shuguang; Cherry, Christopher R; J Bechle, Matthew; Wu, Ye; Marshall, Julian D
2012-02-21
E-bikes in China are the single largest adoption of alternative fuel vehicles in history, with more than 100 million e-bikes purchased in the past decade and vehicle ownership about 2× larger for e-bikes as for conventional cars; e-car sales, too, are rapidly growing. We compare emissions (CO(2), PM(2.5), NO(X), HC) and environmental health impacts (primary PM(2.5)) from the use of conventional vehicles (CVs) and electric vehicles (EVs) in 34 major cities in China. CO(2) emissions (g km(-1)) vary and are an order of magnitude greater for e-cars (135-274) and CVs (150-180) than for e-bikes (14-27). PM(2.5) emission factors generally are lower for CVs (gasoline or diesel) than comparable EVs. However, intake fraction is often greater for CVs than for EVs because combustion emissions are generally closer to population centers for CVs (tailpipe emissions) than for EVs (power plant emissions). For most cities, the net result is that primary PM(2.5) environmental health impacts per passenger-km are greater for e-cars than for gasoline cars (3.6× on average), lower than for diesel cars (2.5× on average), and equal to diesel buses. In contrast, e-bikes yield lower environmental health impacts per passenger-km than the three CVs investigated: gasoline cars (2×), diesel cars (10×), and diesel buses (5×). Our findings highlight the importance of considering exposures, and especially the proximity of emissions to people, when evaluating environmental health impacts for EVs.
-
International Nuclear Information System (INIS)
Cheng, S-C; Wu, J-N; Tsai, M-R; Hsieh, W-F
2009-01-01
We suggest a better mathematical method, fractional calculus, for studying the behavior of the atom-field interaction in photonic crystals. By studying the spontaneous emission of an atom in a photonic crystal with a one-band isotropic model, we found that the long-time inducing memory of the spontaneous emission is a fractional phenomenon. This behavior could be well described by fractional calculus. The results show no steady photon-atom bound state for the atomic resonant transition frequency lying in the proximity of the allowed band edge which was encountered in a previous study (Woldeyohannes and John 2003 J. Opt. B: Quantum Semiclass. Opt. 5 R43). The correctness of this result is validated by the 'cut-off smoothing' density of photon states (DOS) with fractional calculus. By obtaining a rigorous solution without the multiple-valued problem for the system, we show that the method of fractional calculus has a logically concise property.
-
Stroosnijder, L.; Lascano, R. J.; Newton, R. W.; Vanbavel, C. H. M.
1984-01-01
A general method to use a time series of L-band emissivities as an input to a hydrological model for continuously monitoring the net rainfall and evaporation as well as the water content over the entire soil profile is proposed. The model requires a sufficiently accurate and general relation between soil emissivity and surface moisture content. A model which requires the soil hydraulic properties as an additional input, but does not need any weather data was developed. The method is shown to be numerically consistent.
-
Defect chemistry in CuGaS2 thin films: A photoluminescence study
International Nuclear Information System (INIS)
Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.
2007-01-01
In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature
-
Directory of Open Access Journals (Sweden)
Teemu Smura
Full Text Available Genetic recombination is considered to be a very frequent phenomenon among enteroviruses (Family Picornaviridae, Genus Enterovirus. However, the recombination patterns may differ between enterovirus species and between types within species. Enterovirus C (EV-C species contains 21 types. In the capsid coding P1 region, the types of EV-C species cluster further into three sub-groups (designated here as A-C. In this study, the recombination pattern of EV-C species sub-group B that contains types CVA-21, CVA-24, EV-C95, EV-C96 and EV-C99 was determined using partial 5'UTR and VP1 sequences of enterovirus strains isolated during poliovirus surveillance and previously published complete genome sequences. Several inter-typic recombination events were detected. Furthermore, the analyses suggested that inter-typic recombination events have occurred mainly within the distinct sub-groups of EV-C species. Only sporadic recombination events between EV-C species sub-group B and other EV-C sub-groups were detected. In addition, strict recombination barriers were inferred for CVA-21 genotype C and CVA-24 variant strains. These results suggest that the frequency of inter-typic recombinations, even within species, may depend on the phylogenetic position of the given viruses.
-
Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example
Zhou, Hang; Deng, Rui; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Wang, Qingxiao; Han, Yu; Wu, Tao; Liu, Lei
2014-01-01
at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014
-
Reflectance of Co- and Nb-doped BaTiO3 for photon energies from 1.8 to 70 eV
International Nuclear Information System (INIS)
Goudonnet, J.P.; Godefroy, G.; Inagaki, T.; Moretti, P.; Williams, M.W.; Arakawa, E.T.
1985-01-01
The reflectance spectra of Co- and Nb-doped BaTiO 3 crystals have been measured for photon energies from 1.8 to 70 eV. For both types of crystal, structures observed in the 1.8 to 2.3 eV range can be attributed to the presence of residual impurities. Between 2.3 and 3.2 eV the peaks in the reflectance of the Co-doped crystal are found to be of an acceptor charge transfer type. For Nb-doped crystals structures appear at the bottom of the conduction band. For energies larger than 3.2 eV the spectra are characteristic of pure BaTiO 3 crystals, in reasonable agreement with those determined by Baeuerle et al. and calculated by Michel-Calendini and Moretti. 15 refs., 4 figs., 1 tab
-
EV Charging Infrastructure Roadmap
International Nuclear Information System (INIS)
Karner, Donald; Garetson, Thomas; Francfort, Jim
2016-01-01
As highlighted in the U.S. Department of Energy's EV Everywhere Grand Challenge, vehicle technology is advancing toward an objective to ''... produce plug-in electric vehicles that are as affordable and convenient for the average American family as today's gasoline-powered vehicles ...'' [1] by developing more efficient drivetrains, greater battery energy storage per dollar, and lighter-weight vehicle components and construction. With this technology advancement and improved vehicle performance, the objective for charging infrastructure is to promote vehicle adoption and maximize the number of electric miles driven. The EV Everywhere Charging Infrastructure Roadmap (hereafter referred to as Roadmap) looks forward and assumes that the technical challenges and vehicle performance improvements set forth in the EV Everywhere Grand Challenge will be met. The Roadmap identifies and prioritizes deployment of charging infrastructure in support of this charging infrastructure objective for the EV Everywhere Grand Challenge
-
Emission variation in infrared (CdSeTe)/ZnS quantum dots conjugated to antibodies
Energy Technology Data Exchange (ETDEWEB)
Jaramillo Gómez, J.A. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico); Casas Espinola, J.L., E-mail: jlcasas@esfm.ipn.mx [ESFM – Instituto Politécnico Nacional, México D. F. 07738, México (Mexico); Douda, J. [UPIITA – Instituto Politécnico Nacional, México D. F. 07320, México (Mexico)
2014-11-15
The paper presents the photoluminescence (PL) and Raman scattering investigations of infrared CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) in nonconjugated states and after the conjugation to the anti-papilloma virus antibodies (Ab). The Raman scattering study has shown that the CdSeTe core includes two layers with different material compositions such as: CdSe{sub 0.5}Te{sub 0.5} and CdSe{sub 0.7}Te{sub 0.3}. PL spectra of nonconjugated CdSeTe/ZnS QDs are characterized by two Gaussian shape PL bands related to exciton emission in the CdSeTe core and in intermediate layer at the core/shell interface. PL spectra of bioconjugated QDs have changed essentially: the main PL band related to the core emission shifts into high energy and become asymmetric. The energy diagram of double core/shell CdSeTe/ZnS QDs has been analyzed to explain the PL spectrum of nonconjugated QDs and its transformation at the bioconjugation to the papiloma virus antibodies. It is shown that the PL spectrum transformation in bioconjugated QDs can be a powerful technique for biology and medicine.
-
High resolution krypton M/sub 4,5/ x-ray emission spectra
International Nuclear Information System (INIS)
Perera, R.C.C.; Hettrick, M.C.; Lindle, D.W.
1987-10-01
High resolution M/sub 4,5/ (3d → 4p) x-ray emission spectra from a krypton plasma were measured using a recently developed grazing-incidence reflection-grating monochromator/spectrometer with very high flux rates at extreme ultraviolet and soft x-ray wave lengths. The nominal resolving power of the instrument, E/ΔE, is about 300 in this energy range (∼80 eV). Three dipole-allowed 3d → 4p emission lines were observed at 80.98 eV, 80.35 eV and 79.73 eV. A broad peak at about 82.3 eV is tentatively assigned to transitions resulting from Kr 2+ , and effects of excitation energy on M/sub 4,5/ x-ray emission were observed. 9 refs., 3 figs., 1 tab
-
Valence band photoemission studies of clean metals
International Nuclear Information System (INIS)
Wehner, P.S.
1978-04-01
The application of Angle-Resolved Photoelectron Spectroscopy (ARPES) to crystalline solids and the utilization of such studies to illuminate several questions concerning the detailed electronic structure of such materials, are discussed. Specifically, by construction of a Direct Transition (DT) model and the utilization of energy-dependent angle-resolved normal photoemission in the photon energy range 32 eV < or = hν < or = 200 eV, the bulk band structure of copper is experimentally mapped out along three different directions in the Brillouin Zone; GAMMA to K, GAMMA to L, and GAMMA to X. In addition, various effects which influence the obtainable resolution in vector k-space, namely, thermal disorder, momentum broadening, and band mixing, are discussed and are shown to place severe limitations on the applicability of the DT model. Finally, a model for Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS) based on the symmetry of the initial-state wavefunctions is presented and compared to experimental results obtained from copper single crystals
-
NON-DETECTION OF L-BAND LINE EMISSION FROM THE EXOPLANET HD189733b
International Nuclear Information System (INIS)
Mandell, Avi M.; Deming, L. Drake; Mumma, Michael J.; Villanueva, Geronimo L.; Blake, Geoffrey A.; Knutson, Heather A.; Salyk, Colette
2011-01-01
We attempt to confirm bright non-local thermodynamic equilibrium (non-LTE) emission from the exoplanet HD 189733b at 3.25 μm, as recently reported by Swain et al. based on observations at low spectral resolving power (λ/δλ ∼ 30). Non-LTE emission lines from gas in an exoplanet atmosphere will not be significantly broadened by collisions, so the measured emission intensity per resolution element must be substantially brighter when observed at high spectral resolving power. We observed the planet before, during, and after a secondary eclipse event at a resolving power λ/δλ = 27, 000 using the NIRSPEC spectrometer on the Keck II telescope. Our spectra cover a spectral window near the peak found by Swain et al., and we compare emission cases that could account for the magnitude and wavelength dependence of the Swain et al. result with our final spectral residuals. To model the expected line emission, we use a general non-equilibrium formulation to synthesize emission features from all plausible molecules that emit in this spectral region. In every case, we detect no line emission to a high degree of confidence. After considering possible explanations for the Swain et al. results and the disparity with our own data, we conclude that an astrophysical source for the putative non-LTE emission is unlikely. We note that the wavelength dependence of the signal seen by Swain et al. closely matches the 2ν 2 band of water vapor at 300 K, and we suggest that an imperfect correction for telluric water is the source of the feature claimed by Swain et al.
-
Band gap of corundumlike α -Ga2O3 determined by absorption and ellipsometry
Segura, A.; Artús, L.; Cuscó, R.; Goldhahn, R.; Feneberg, M.
2017-07-01
The electronic structure near the band gap of the corundumlike α phase of Ga2O3 has been investigated by means of optical absorption and spectroscopic ellipsometry measurements in the ultraviolet (UV) range (400-190 nm). The absorption coefficient in the UV region and the imaginary part of the dielectric function exhibit two prominent absorption thresholds with wide but well-defined structures at 5.6 and 6.3 eV which have been ascribed to allowed direct transitions from crystal-field split valence bands to the conduction band. Excitonic effects with large Gaussian broadening are taken into account through the Elliott-Toyozawa model, which yields an exciton binding energy of 110 meV and direct band gaps of 5.61 and 6.44 eV. The large broadening of the absorption onset is related to the slightly indirect character of the material.
-
Reverdin, Charles; Thais, Frédéric; Loisel, Guillaume; Busquet, M; Bastiani-Ceccotti, S; Blenski, T; Caillaud, T; Ducret, J E; Foelsner, W; Gilles, D; Gilleron, F; Pain, J C; Poirier, M; Serres, F; Silvert, V; Soullie, G; Turck-Chieze, S; Villette, B
2012-10-01
An x-ray grating spectrometer was built in order to measure opacities in the 50 eV to 250 eV spectral range with an average spectral resolution ∼ 50. It has been used at the LULI-2000 laser facility at École Polytechnique (France) to measure the Δn = 0, n = 3 transitions of several elements with neighboring atomic number: Cr, Fe, Ni, and Cu in the same experimental conditions. Hence a spectrometer with a wide spectral range is required. This spectrometer features one line of sight looking through a heated sample at backlighter emission. It is outfitted with one toroidal condensing mirror and several flat mirrors cutting off higher energy photons. The spectral dispersion is obtained with a flatfield grating. Detection consists of a streak camera sensitive to soft x-ray radiation. Some experimental results showing the performance of this spectrometer are presented.
-
International Nuclear Information System (INIS)
Reverdin, Charles; Caillaud, T.; Gilleron, F.; Pain, J. C.; Silvert, V.; Soullie, G.; Villette, B.; Thais, Frédéric; Loisel, Guillaume; Blenski, T.; Poirier, M.; Busquet, M.; Bastiani-Ceccotti, S.; Serres, F.; Ducret, J. E.; Foelsner, W.; Gilles, D.; Turck-Chieze, S.
2012-01-01
An x-ray grating spectrometer was built in order to measure opacities in the 50 eV to 250 eV spectral range with an average spectral resolution ∼ 50. It has been used at the LULI-2000 laser facility at École Polytechnique (France) to measure the Δn = 0, n = 3 transitions of several elements with neighboring atomic number: Cr, Fe, Ni, and Cu in the same experimental conditions. Hence a spectrometer with a wide spectral range is required. This spectrometer features one line of sight looking through a heated sample at backlighter emission. It is outfitted with one toroidal condensing mirror and several flat mirrors cutting off higher energy photons. The spectral dispersion is obtained with a flatfield grating. Detection consists of a streak camera sensitive to soft x-ray radiation. Some experimental results showing the performance of this spectrometer are presented.
-
Energy Technology Data Exchange (ETDEWEB)
Reverdin, Charles; Caillaud, T.; Gilleron, F.; Pain, J. C.; Silvert, V.; Soullie, G.; Villette, B. [CEA, DAM, DIF, 91297 Arpajon (France); Thais, Frederic; Loisel, Guillaume; Blenski, T.; Poirier, M. [CEA, DSM, IRAMIS, Service Photons, Atomes et Molecules, 91191 Gif-sur-Yvette (France); Busquet, M. [ARTEP Inc, Ellicott City, Maryland 21042 (United States); Bastiani-Ceccotti, S.; Serres, F. [LULI, Ecole Polytechnique, CNRS, CEA, UPMC, route de Saclay, 91128 Palaiseau (France); Ducret, J. E. [CELIA, UMR5107, CEA, CNRS, Universite de Bordeaux, 33400 Talence (France); Foelsner, W. [Max Planck Instituet fuer Quantum Optik, 85748 Garching (Germany); Gilles, D.; Turck-Chieze, S. [CEA, DSM, IRFU, Service d' astrophysique, 91191 Gif-sur-Yvette (France)
2012-10-15
An x-ray grating spectrometer was built in order to measure opacities in the 50 eV to 250 eV spectral range with an average spectral resolution
{approx} 50. It has been used at the LULI-2000 laser facility at Ecole Polytechnique (France) to measure the {Delta}n = 0, n = 3 transitions of several elements with neighboring atomic number: Cr, Fe, Ni, and Cu in the same experimental conditions. Hence a spectrometer with a wide spectral range is required. This spectrometer features one line of sight looking through a heated sample at backlighter emission. It is outfitted with one toroidal condensing mirror and several flat mirrors cutting off higher energy photons. The spectral dispersion is obtained with a flatfield grating. Detection consists of a streak camera sensitive to soft x-ray radiation. Some experimental results showing the performance of this spectrometer are presented. -
EV Charging Infrastructure Roadmap
Energy Technology Data Exchange (ETDEWEB)
Karner, Donald [Electric Transportation Inc., Rogers, AR (United States); Garetson, Thomas [Electric Transportation Inc., Rogers, AR (United States); Francfort, Jim [Idaho National Lab. (INL), Idaho Falls, ID (United States)
2016-08-01
As highlighted in the U.S. Department of Energy’s EV Everywhere Grand Challenge, vehicle technology is advancing toward an objective to “… produce plug-in electric vehicles that are as affordable and convenient for the average American family as today’s gasoline-powered vehicles …” [1] by developing more efficient drivetrains, greater battery energy storage per dollar, and lighter-weight vehicle components and construction. With this technology advancement and improved vehicle performance, the objective for charging infrastructure is to promote vehicle adoption and maximize the number of electric miles driven. The EV Everywhere Charging Infrastructure Roadmap (hereafter referred to as Roadmap) looks forward and assumes that the technical challenges and vehicle performance improvements set forth in the EV Everywhere Grand Challenge will be met. The Roadmap identifies and prioritizes deployment of charging infrastructure in support of this charging infrastructure objective for the EV Everywhere Grand Challenge
-
Emissivity Measurements of Foam-Covered Water Surface at L-Band for Low Water Temperatures
Directory of Open Access Journals (Sweden)
En-Bo Wei
2014-11-01
Full Text Available For a foam-covered sea surface, it is difficult to retrieve sea surface salinity (SSS with L-band brightness temperature (1.4 GHz because of the effect of a foam layer with wind speeds stronger than 7 m/s, especially at low sea surface temperature (SST. With foam-controlled experiments, emissivities of a foam-covered water surface at low SST (−1.4 °C to 1.7 °C are measured for varying SSS, foam thickness, incidence angle, and polarization. Furthermore, a theoretical model of emissivity is introduced by combining wave approach theory with the effective medium approximation method. Good agreement is obtained upon comparing theoretical emissivities with those of experiments. The results indicate that foam parameters have a strong influence on increasing emissivity of a foam-covered water surface. Increments of experimental emissivities caused by foam thickness of 1 cm increase from about 0.014 to 0.131 for horizontal polarization and 0.022 to 0.150 for vertical polarization with SSS increase and SST decrease. Contributions of the interface between the foam layer and water surface to the foam layer emissivity increments are discussed for frequencies between 1 and 37 GHz.
-
Directory of Open Access Journals (Sweden)
Fuad Un-Noor
2017-08-01
Full Text Available Electric vehicles (EV, including Battery Electric Vehicle (BEV, Hybrid Electric Vehicle (HEV, Plug-in Hybrid Electric Vehicle (PHEV, Fuel Cell Electric Vehicle (FCEV, are becoming more commonplace in the transportation sector in recent times. As the present trend suggests, this mode of transport is likely to replace internal combustion engine (ICE vehicles in the near future. Each of the main EV components has a number of technologies that are currently in use or can become prominent in the future. EVs can cause significant impacts on the environment, power system, and other related sectors. The present power system could face huge instabilities with enough EV penetration, but with proper management and coordination, EVs can be turned into a major contributor to the successful implementation of the smart grid concept. There are possibilities of immense environmental benefits as well, as the EVs can extensively reduce the greenhouse gas emissions produced by the transportation sector. However, there are some major obstacles for EVs to overcome before totally replacing ICE vehicles. This paper is focused on reviewing all the useful data available on EV configurations, battery energy sources, electrical machines, charging techniques, optimization techniques, impacts, trends, and possible directions of future developments. Its objective is to provide an overall picture of the current EV technology and ways of future development to assist in future researches in this sector.
-
Czech Academy of Sciences Publication Activity Database
Cheng, S.; Tjahjono, M.; Rajarathnam, D.; Chuanzhao, L.; Lyapkalo, Ilya; Chen, D.; Garland, M.
2007-01-01
Roč. 61, č. 10 (2007), s. 1057-1062 ISSN 0003-7028 Institutional research plan: CEZ:AV0Z40550506 Keywords : infrared emission spectroscopy * liquid phase reaction * band-target entropy minimization * BTEM * emittance Subject RIV: CC - Organic Chemistry Impact factor: 1.902, year: 2007
-
Quenching and blue shift of UV emission intensity of hydrothermally grown ZnO:Mn nanorods
Energy Technology Data Exchange (ETDEWEB)
Vinod, R. [Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Junaid Bushiri, M., E-mail: junaidbushiri@gmail.com [Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Achary, Sreekumar Rajappan; Muñoz-Sanjosé, Vicente [Departamento de FisicaAplicada y Electromagnetismo, Universitat de Valencia, c/Dr. Moliner 50, Burjassot, Valencia 46100 (Spain)
2015-01-15
Highlights: • Single crystalline ZnO:Mn nanorods. • Reduced optical active defects. • Quenching and blue shift of UV emission. - Abstract: ZnO:Mn alloyed nanorods (Mn nominal concentration – 3–5 wt%) were synthesized by using hydrothermal process at an optimized growth temperature of 200 °C and a growth time of 3 h. The XRD, SEM and Raman, FTIR investigations reveal that ZnO:Mn (Mn – 3–5 wt%) retained hexagonal wurtzite crystal structure with nanorod morphology. The HRTEM and SAED analysis confirm the single crystalline nature of hydrothermally grown ZnO and ZnO:Mn (5 wt%) nanorods. The ZnO:Mn nanorods (Mn – 0–5 wt%) displayed optical band gap in the range 3.23–3.28 eV. The blue shift of UV emission peak (PL) from 393 (ZnO) to 386 nm and quenching of photoluminescence emission in ZnO:Mn is due to the Mn incorporation in ZnO lattice. Relative increase in intensity of Raman band at 660 cm{sup −1} with nominal doping of Mn 3–5 wt% in ZnO indicate that defects are introduced in ZnO:Mn system as a result of doping that leads to the quenching of photoluminescence emission at 393 nm.
-
Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films
International Nuclear Information System (INIS)
Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N
2011-01-01
The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.
-
Tunable band gap and optical properties of surface functionalized Sc2C monolayer
International Nuclear Information System (INIS)
Wang Shun; Du Yu-Lei; Liao Wen-He
2017-01-01
Using the density functional theory, we have investigated the electronic and optical properties of two-dimensional Sc 2 C monolayer with OH, F, or O chemical groups. The electronic structures reveal that the functionalized Sc 2 C monolayers are semiconductors with a band gap of 0.44–1.55 eV. The band gap dependent optical parameters, like dielectric function, absorption coefficients, reflectivity, loss function, and refraction index were also calculated for photon energy up to 20 eV. At the low-energy region, each optical parameter shifts to red, and the peak increases obviously with the increase of the energy gap. Consequently, Sc 2 C monolayer with a tunable band gap by changing the type of surface chemical groups is a promising 2D material for optoelectronic devices. (paper)
-
Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments
DEFF Research Database (Denmark)
Fernandes Cauduro, André Luis; Sombrio, C I L; Franzen, P L
2015-01-01
Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep...... level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm...... the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments....
-
Energy Technology Data Exchange (ETDEWEB)
Jiao, Wenyuan, E-mail: wyjiaonju@gmail.com; Kong, Wei; Li, Jincheng; Kim, Tong-Ho; Brown, April S. [Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 (United States); Collar, Kristen [Department of Physics, Duke University, Durham, NC, 27708 (United States); Losurdo, Maria [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy)
2016-03-15
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In{sub 0.18}Al{sub 0.82}N, 0.15 eV for In{sub 0.17}Al{sub 0.83}N, and 0.23 eV for In{sub 0.098}Al{sub 0.902}N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.
-
Directory of Open Access Journals (Sweden)
Wenyuan Jiao
2016-03-01
Full Text Available Angle-resolved X-ray photoelectron spectroscopy (XPS is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.
-
Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3
Zhang, Jiaye; Han, Shaobo; Luo, Weihuang; Xiang, Shuhuai; Zou, Jianli; Oropeza, Freddy E.; Gu, Meng; Zhang, Kelvin H. L.
2018-04-01
Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and characterization of the interface properties of a transparent heterojunction consisting of p-type NiO and n-type perovskite BaSnO3. We show that high-quality NiO thin films can be epitaxially grown on BaSnO3 with sharp interfaces because of a small lattice mismatch (˜1.3%). The diode fabricated from this heterojunction exhibits rectifying behavior with a ratio of 500. X-ray photoelectron spectroscopy reveals a type II or "staggered" band alignment with valence and conduction band offsets of 1.44 eV and 1.86 eV, respectively. Moreover, a large upward band bending potential of 0.90 eV for BaSnO3 and a downward band bending potential of 0.15 eV for NiO were observed in the interface region. Such electronic properties have important implication for optoelectronic applications as the large built-in potential provides favorable energetics for photo-generated electron-hole separation/migration.
-
Simultaneous measurements of the OH(8,3) band and 015577A airglow emissions
International Nuclear Information System (INIS)
Takahashi, H.; Sahai, Y.; Clemesha, B.R.; Simonich, D.M.; Batista, P.P.; Teixeira, N.R.
1981-01-01
Simultaneous measurements of the night airglow OH(8,3) band and OI 5577A have been made at Cachoeira Paulista (22.7 0 S, 45,2 0 W) during June-August 1976. Correlations between the nocturnal variations of these emissions and also with the OH rotational temperature are presented. It is found that OH (8,3) is correlated with the rotational temperature but with a time lag of about 1 hour. The variations of 5577A lead the OH (8,3) by about 2 to 3 hours. The rotational temperature co-varies with 5577A, rather than OH (8,3) and there is no significant time lag. Based on the correlation study, the nocturnal variations of the two emissions can be explained by the atmospheric density perturbation caused by solar tides and internal gravity waves. (Author) [pt
-
Laser-induced band-gap collapse in GaAs
Glezer, E. N.; Siegal, Y.; Huang, L.; Mazur, E.
1995-03-01
We present experimentally determined values of the dielectric constant of GaAs at photon energies of 2.2 and 4.4 eV following excitation of the sample with 1.9-eV, 70-fs laser pulses spanning a fluence range from 0 to 2.5 kJ/m2. The data show that the response of the dielectric constant to the excitation is dominated by changes in the electronic band structure and not by the optical susceptibility of the excited free carriers. The behavior of the dielectric constant indicates a drop in the average bonding-antibonding splitting of GaAs following the laser-pulse excitation. This drop in the average splitting leads to a collapse of the band gap on a picosecond time scale for excitation at fluences near the damage threshold of 1.0 kJ/m2 and on a subpicosecond time scale at higher excitation fluences. The changes in the electronic band structure result from a combination of electronic screening of the ionic potential as well as structural deformation of the lattice caused by the destabilization of the covalent bonds.
-
Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment
International Nuclear Information System (INIS)
Chen, X.F.; He, G.; Lv, J.G.; Liu, M.; Wang, P.H.; Chen, X.S.; Sun, Z.Q.
2015-01-01
The effect of nitrogen on the band offset of sputtering-derived InZnGaO 4 (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been successfully incorporated into the IGZO film. By using In 3d 5/2 , In 3d 3/2 and Ga 3d core level (CL) XPS spectra as references, values of valence band offsets (ΔE v ) of have been determined to be 2.56 ± 0.02 and 2.44 ± 0.02 eV for IGZO/Si and IGZO:N/Si heterojunctions, respectively. Using the experimental band gap of 3.59 and 3.50 eV of the IGZO/Si and IGZO:N/Si, the calculated values of conduction band offset (ΔE c ) is 0.09 ± 0.01 and 0.06 ± 0.01 eV, respectively. The results indicate that nitrogen incorporation leads to the reduction in band gap and ΔE v and the slight effect on the ΔE c has also been detected. - Highlights: • α-IGZO/Si and α-IGZO:N/Si heterostructures have been obtained by sputtering. • Nitrogen dependent ΔE v and ΔE v have been determined by XPS measurements. • Nitrogen incorporation in IGZO leads to the reduced band gap and increased ΔE v . • Nitrogen incorporation has no apparent effect on the ΔE c of α-IGZO/Si
-
How Do The EV Project Participants Feel about Charging Their EV at Home?
Energy Technology Data Exchange (ETDEWEB)
Francfort, James E. [Idaho National Lab. (INL), Idaho Falls, ID (United States)
2015-02-01
Key Observations from the Survey of the EV Project Participants; In June 2013, 72% of EV Project participants were very satisfied with their home charging experience; 21% of participants relied totally on home charging for all of their charging needs; Volt owners relied more on home charging than Leaf owners, who reported more use of away-from-home charging; 74% of participants reported that they plug in their plug-in electric vehicle (PEV) every time they park at home. Others plugged in as they determined necessary to support their driving needs; 40% of participants reported that they would not have or are unsure that in June 2013 whether they would have purchased an alternating current (AC) Level 2 electric vehicle supply equipment (EVSE) for home charging if it had not been provided by The EV Project; and 61% of participants reported that The EV Project incentive was very important or important in their decision to obtain a PEV.
-
Directory of Open Access Journals (Sweden)
Rachana Vidhi
2018-02-01
Full Text Available Electric vehicles reduce pollution only if a high percentage of the electricity mix comes from renewable sources and if the battery manufacturing takes place at a site far from the vehicle use region. Industries developed due to increased electric vehicle adoption may also cause additional air pollution. The Indian government has committed to solving New Delhi’s air pollution issues through an ambitious policy of switching 100% of the light duty consumer vehicles to electric vehicles by 2030. This policy is based on vehicle grid interaction and relies on shared mobility through the electric vehicle fleet. There are several human behavioral changes necessary to achieve 100% adoption of electric vehicles. This paper reviews different steps in the lifecycle of an electric vehicle (EV, their impact on environmental emissions, and recommends policies suitable for different socio-economic group that are relevant to the Indian market. To reduce air pollution through adoption of electric vehicles, the Indian government needs to adopt policies that increase sale of electric vehicles, increase percentage of renewable energy in the electricity mix, and prevent air pollution caused from battery manufacturing. The recommended policies can be customized for any market globally for reducing air pollution through increased adoption of electric vehicles.
-
Energy Technology Data Exchange (ETDEWEB)
Li, Yapeng [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Fu, Li, E-mail: fuli@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Sun, Jie [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072 (China); Ibrahim, Kurash; Wang, Jia-ou [Laboratory of Synchrotron Radiation, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)
2016-02-15
Highlights: • The valence band maximum of ITO film and MIT were measured to be 1.6 eV and 0.6 eV, respectively. • The concentration of In element presented a trend of increasing first and then decreasing from MIT to ITO. • The valence band offsets of the ITO/MIT(1 1 0) heterojunction was confirmed to be a type-II band alignment phenomenon. - Abstract: The Indium Tin Oxide (ITO) film was deposited on the surface of Hg{sub 3}In{sub 2}Te{sub 6} (short for MIT) (1 1 0) for the fabrication of ITO/MIT(1 1 0) heterojunction by using the pulsed laser deposition method. In situ X-ray photoelectron spectroscopy was utilized to examine the band offsets and core level of ITO/MIT(1 1 0) heterojunctions. The result showed that the valence band maximum of ITO films and MIT(1 1 0) were 1.6 eV and 0.6 eV, respectively. Meanwhile, it was found that the binding energy of Te 3d, Sn 3d and Hg 4f remained unchanged during the ITO deposition process. However, the binding energy of O 1s and In 3d{sub 5/2} increased about 0.3 eV and 0.2 eV, respectively, with the thickness increasing of ITO film from 3.5 nm to 5 nm. This may due to the elements diffusion at the interface region during the film growing process. According to the core level spectrum, it can be speculated that no significant chemical reaction occurred at the interface of ITO/MIT(1 1 0). In addition, the valence band offset of the ITO/MIT(1 1 0) heterojunction can be calculated to be −1 ± 0.15 eV by the means of the photoelectron spectroscopy methods. The conduction band offset is deduced to be −3.96 ± 0.15 eV from the known valence band offset value, indicating that the band offsets of ITO/MIT(1 1 0) heterojunction is a type-II band alignment.
-
Energy Technology Data Exchange (ETDEWEB)
Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)
2012-09-20
We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.
-
Coverdale, C A; Safronova, A S; Kantsyrev, V L; Ouart, N D; Esaulov, A A; Deeney, C; Williamson, K M; Osborne, G C; Shrestha, I; Ampleford, D J; Jones, B
2009-04-17
Experiments with cylindrical copper wire arrays at the 1-MA Zebra facility show that high temperatures exist in the precursor plasmas formed when ablated wire array material accretes on the axis prior to the stagnation of a z pinch. In these experiments, the precursor radiated approximately 20% of the >1000 eV x-ray output, and time-resolved spectra show substantial emission from Cu L-shell lines. Modeling of the spectra shows an increase in temperature as the precursor forms, up to approximately 450 eV, after which the temperature decreases to approximately 220-320 eV until the main implosion.
-
Yamada, Yasuhiro; Nakamura, Toru; Endo, Masaru; Wakamiya, Atsushi; Kanemitsu, Yoshihiko
2014-03-01
We studied the near-band-edge optical responses of solution-processed CH3NH3PbI3 on mesoporous TiO2 electrodes, which is utilized in mesoscopic heterojunction solar cells. Photoluminescence (PL) and PL excitation spectra peaks appear at 1.60 and 1.64 eV, respectively. The transient absorption spectrum shows a negative peak at 1.61 eV owing to photobleaching at the band-gap energy, indicating a direct band-gap semiconductor. On the basis of the temperature-dependent PL and diffuse reflectance spectra, we clarified that the absorption tail at room temperature is explained in terms of an Urbach tail and consistently determined the band-gap energy to be ˜1.61 eV at room temperature.
-
Zhang, Yongqin; Iman, Kory
2018-05-01
Fuel-based transportation is one of the major contributors to poor air quality in the United States. Electric Vehicle (EV) is potentially the cleanest transportation technology to our environment. This research developed a spatial suitability model to identify optimal geographic locations for installing EV charging stations for travelling public. The model takes into account a variety of positive and negative factors to identify prime locations for installing EV charging stations in Wasatch Front, Utah, where automobile emission causes severe air pollution due to atmospheric inversion condition near the valley floor. A walkable factor grid was created to store index scores from input factor layers to determine prime locations. 27 input factors including land use, demographics, employment centers etc. were analyzed. Each factor layer was analyzed to produce a summary statistic table to determine the site suitability. Potential locations that exhibit high EV charging usage were identified and scored. A hot spot map was created to demonstrate high, moderate, and low suitability areas for installing EV charging stations. A spatially well distributed EV charging system was then developed, aiming to reduce "range anxiety" from traveling public. This spatial methodology addresses the complex problem of locating and establishing a robust EV charging station infrastructure for decision makers to build a clean transportation infrastructure, and eventually improve environment pollution.
-
Environmental Justice Aspects of Exposure to PM2.5 Emissions from Electric Vehicle Use in China.
Ji, Shuguang; Cherry, Christopher R; Zhou, Wenjun; Sawhney, Rapinder; Wu, Ye; Cai, Siyi; Wang, Shuxiao; Marshall, Julian D
2015-12-15
Plug-in electric vehicles (EVs) in China aim to improve sustainability and reduce environmental health impacts of transport emissions. Urban use of EVs rather than conventional vehicles shifts transportation's air pollutant emissions from urban areas (tailpipes) to predominantly rural areas (power plants), changing the geographic distribution of health impacts. We model PM2.5-related health impacts attributable to urban EV use for 34 major cities. Our investigation focuses on environmental justice (EJ) by comparing pollutant inhalation versus income among impacted counties. We find that EVs could increase EJ challenge in China: most (~77%, range: 41-96%) emission inhalation attributable to urban EVs use is distributed to predominately rural communities whose incomes are on average lower than the cities where EVs are used. Results vary dramatically across cities depending on urban income and geography. Discriminant analysis reveals that counties with low income and high inhalation of urban EV emissions have comparatively higher agricultural employment rates, higher mortality rates, more children in the population, and lower education levels. We find that low-emission electricity sources such as renewable energy can help mitigate EJ issues raised here. Findings here are not unique to EVs, but instead are relevant for nearly all electricity-consuming technologies in urban areas.
-
Energy Technology Data Exchange (ETDEWEB)
Errandonea, D., E-mail: daniel.errandonea@uv.es [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Bandiello, E.; Segura, A. [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Hamlin, J.J.; Maple, M.B. [Department of Physics, University of California, San Diego, La Jolla, CA 92093 (United States); Rodriguez-Hernandez, P.; Muñoz, A. [Departamento de Física Fundamental II, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, MALTA ConsoliderTeam, La Laguna, 38205 Tenerife (Spain)
2014-02-25
Highlights: • Electronic and optical properties of PbCrO{sub 4} are studied under compression. • Band-gap collapses are observed and correlated with structural phase transitions. • PbCrO{sub 4} band-gap is reduced from 2.3 to 0.8 eV in a 20 GPa range. • PbCrO{sub 4} is an n-type semiconductor with donor levels associated to Frenkel defects. • A deep-to-shallow donor transformation at HP induces a large resistivity decrease. -- Abstract: The electronic transport properties and optical properties of lead(II) chromate (PbCrO{sub 4}) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO{sub 4} behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO{sub 4} as a narrow-gap semiconductor.
-
A completive survey study on the feasibility and adaptation of EVs in Beijing, China
International Nuclear Information System (INIS)
Sun, Lishan; Huang, Yuchen; Liu, Shuli; Chen, Yanyan; Yao, Liya; Kashyap, Anil
2017-01-01
Highlights: • EVs have been greatly developed with a series of encouraging policies. • The maxi mileages and braking performance still needs further improvement. • More residential and public charging piles should be in the plan and design. • APP oriented information of charging station need to be researched and developed. - Abstract: The private motor vehicles are significantly important means of transportation in modern lifestyle, however, these also contribute to a large proportion of the total air pollution and primary energy consumption. In order to develop green transportation system, it becomes imperative to use integrated technologies to achieve reduced emissions and utilize renewable energy. Electric vehicles (EVs) have been considered as one of these technologies to transform the traditional vehicle mix. However, the uptake of EV has been debated on factors like cost, performance (autonomous mileage), charging point infrastructure construction, energy saving, policy and end users’ adaptation. Present study investigates the technology feasibility (which usually refer to EVs’ cost, EV charging, supplier’s customer services quality, EV travel performance) and users’ adaptation of EV in Beijing, which is a key driver for the EV uptake into the Beijing transportation system. The relevant data have been collected and analyzed in the form of questionnaire survey around all of these factors. While considering the user perception and satisfaction, safety of charging and energy bills have also been investigated. According to the data analysis, it has been found the policy of ‘No traffic restrictions for EVs’ (the traffic restrictions means for certain date, from Monday to Friday the motor vehicles with the last register number of 1 and 6, 2 and 7, 3 and 8, 4 and 9, 5 and 0, are restricted to travel, respectively), the availability of the charging infrastructure and technical support are the most significant factors affecting the users
-
Mock, Alyssa; Korlacki, Rafał; Briley, Chad; Darakchieva, Vanya; Monemar, Bo; Kumagai, Yoshinao; Goto, Ken; Higashiwaki, Masataka; Schubert, Mathias
2017-12-01
We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β -Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75-9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition.
-
International Nuclear Information System (INIS)
Hagemann, H.J.; Gudat, W.; Kunz, C.
1975-10-01
The absorption coeffecient of VAl 3 , FeAl, NiAl, NiAl 3 , CuAl 2 , PrAl 2 and of disordered V-Al (16 at. % Al, 28 %, 41%) and Fe-Al (11%) alloys has been measured in the region of the Msub(2,3)-absorption of the transition metals and the L-absorption of Al. The strong changes of the Al spectrum in the region of the 100 eV maximum upon alloying are explained as another evidence of the EXAFS (extended X-ray absorption fine structure) nature of these structures. The broad, prominent absorption peaks from the 3p excitations in V and Fe and from the 4d excitations in Pr are influenced only little on alloying and thus appear to be of atomic origin. The fine structure at the onset of the Pr 4d-transitions is identical in the metal and the alloy but differs from that of Pr oxide. The only Msub(2,3)-edge which is detectably shifted is that if Ni (up to 2.1 eV), whereas the onset of the Al Lsub(2,3)-edge is shifted in all the alloys (up to 1.1 eV). The shifts are interpreted in accordance with X-ray fluorescence and nuclear resonance measurements as changes of the density of states in the valence band of the alloys. (orig.) [de
-
Multicolor tunable emission induced by Cu ion doping of perovskite zirconate
Energy Technology Data Exchange (ETDEWEB)
Lee, D.J. [Department of Physics, Soongsil University, Seoul 156-743 (Korea, Republic of); Lee, Y.S., E-mail: ylee@ssu.ac.kr [Department of Physics, Soongsil University, Seoul 156-743 (Korea, Republic of); Noh, H.-J. [Department of Physics, Chonnam National University, Gwangju 500-757 (Korea, Republic of)
2016-01-15
We report on a multicolor tunable emission induced by Cu ion doping of perovskite zirconate SrZrO{sub 3} with a fairly large bandgap (5.6 eV). X-ray photoelectron spectroscopy of our samples revealed the existence of two mixed valence states of the doped Cu ions, +1 and +2, with a ratio of 3:1. In photoluminescence excitation spectroscopy the absorption structures of the 3d states in monovalent Cu{sup +} and divalent Cu{sup 2+} were identified near 5 eV and 3.5 eV, respectively. Interestingly, in relation to the valence states of the Cu ions, the emission spectra depended strongly on the photo-excitation energy (E{sub ex}). For E{sub ex}<3.8 eV (UVA) two orange and green emissions were observed with the involvement of the Cu{sup 2+} state. For E{sub ex}>3.8 eV (UVB/UVC), however, the Cu{sup +} state, instead of the Cu{sup 2+} state, was dominant in the emission process, causing the visible emission to be turned into violet. Our results were indicative of the complementary role of the different Cu-ion valence states in a wide range of visible emission with respect to E{sub ex}. - Highlights: • Visible emission induced by the Cu doping of SrZrO3. • Tunable colors from orange to violet with respect to the photo-excitation energy. • Multicolor emission should be related to the mixed valence states of the doped Cu ions.
-
Energy Technology Data Exchange (ETDEWEB)
Wangkawong, Kanlayawat [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Tantraviwat, Doldet [Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center (NECTEC), Chachoengsao 24000 (Thailand); Phanichphant, Sukon [Materials Science Research Centre, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Inceesungvorn, Burapat, E-mail: binceesungvorn@gmail.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)
2015-01-01
Highlights: • Band lineup of novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} composite is determined by semidirect XPS method. • The composite forms a type-II staggered heterojunction. • Valence and conduction-band offsets are 0.2 ± 0.3 and −0.6 ± 0.3 eV, respectively. • Band lineup determination is needed for understanding charge transfer at interfaces. - Abstract: The energy band diagram and band offsets of the novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} heterojunction photocatalyst are investigated by X-ray photoelectron spectroscopy for the first time. Excluding the strain effect, the valence-band and conduction-band offsets are determined to be 0.2 ± 0.3 eV and −0.6 ± 0.3 eV, respectively. The CoTiO{sub 3}/Ag{sub 3}VO{sub 4} composite forms a type-II heterojunction, for which the photogenerated charge carriers could be effectively separated. The results suggest that determination of the energy band structure is crucial for understanding the photogenerated charge transfer mechanism at the interfaces, hence the corresponding photocatalytic activity and would also be beneficial to the design of new and efficient heterostructure-based photocatalysts.
-
Non-exhaust PM emissions from electric vehicles
Timmers, Victor R. J. H.; Achten, Peter A. J.
2016-06-01
Particulate matter (PM) exposure has been linked to adverse health effects by numerous studies. Therefore, governments have been heavily incentivising the market to switch to electric passenger cars in order to reduce air pollution. However, this literature review suggests that electric vehicles may not reduce levels of PM as much as expected, because of their relatively high weight. By analysing the existing literature on non-exhaust emissions of different vehicle categories, this review found that there is a positive relationship between weight and non-exhaust PM emission factors. In addition, electric vehicles (EVs) were found to be 24% heavier than equivalent internal combustion engine vehicles (ICEVs). As a result, total PM10 emissions from EVs were found to be equal to those of modern ICEVs. PM2.5 emissions were only 1-3% lower for EVs compared to modern ICEVs. Therefore, it could be concluded that the increased popularity of electric vehicles will likely not have a great effect on PM levels. Non-exhaust emissions already account for over 90% of PM10 and 85% of PM2.5 emissions from traffic. These proportions will continue to increase as exhaust standards improve and average vehicle weight increases. Future policy should consequently focus on setting standards for non-exhaust emissions and encouraging weight reduction of all vehicles to significantly reduce PM emissions from traffic.
-
International Nuclear Information System (INIS)
Ajimsha, R.S.; Das, Amit K.; Joshi, M.P.; Kukreja, L.M.
2014-01-01
Highlights: • Band offset studies at the interface of Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures were performed using X-ray photoelectron spectroscopy. • Valance band offsets (VBO) of these hetero-structures were obtained from respective XPS peak positions and VB spectra using Kraut's equation. • Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. • Schematic band alignment diagram for the interface of these hetero-structures has been constructed. • Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. - Abstract: We have studied the band offset and alignment of pulsed laser deposited Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures using photoelectron spectroscopy. Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures
-
Luminescence centers in bismuth orthogermanate
International Nuclear Information System (INIS)
Bordun, O.M.
2001-01-01
The luminescence and photoexcitation spectra of single crystals,ceramics,and thin films of Bi 4 Ce 3 O 1 2 are studied.The decomposition of the luminescence spectra into elementary components by the Alentsev-Fock method showed that they consist of three bands with maxima at 2.7,2.4,and 2.05 eV.The bands with maxima at 2.7 and 2.4 eV are assigned to the emission of self-trapped Frenkel excitons describing the excited state of a (BiO 6 ) 9- molecular ion. Emission bands with maxima at 2.0 5 eV are assigned to recombination on traps caused by structural defects
-
Energy Technology Data Exchange (ETDEWEB)
Evtodiev, I. [Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of); Caraman, I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Leontie, L., E-mail: lleontie@uaic.ro [Alexandru Ioan Cuza University of Iasi, Bd. Carol I, Nr. 11, RO 700506 Iasi (Romania); Rusu, D.-I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Dafinei, A. [Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania); Nedeff, V.; Lazar, G. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)
2012-03-15
Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.
-
International Nuclear Information System (INIS)
Zierau, W.; Skibowski, M.
1975-04-01
The reflection spectra of RbCl, RbBr and RbI single crystals were investigated for temperatures between 300 K and 8 K in order to study excitations from the Rb + 4p level (> approximately 16 eV) as well as the higher continuum transitions from the valence band (> approximately 10 eV). The measurements were performed by use of the synchrotron radiation of DESY. The sensitivity for detecting details of the fine structure was increased by simultaneously measuring the wavelength modulated spectra. The experimental procedure is briefly described. New spectral features have been resolved for the exciton multiplets from the Rb + 4p level. They are discussed in light of the predictions of a recent model for the Rb + 4p excitons based on ligand field theory. The continuum transitions associated with the valence band and the Rb + 4p level show characteristic structure which is compared with calculations of the joint density of states. (orig.) [de
-
International Nuclear Information System (INIS)
Gey, A.
2000-01-01
Total nuclear power generation in Germany in 1999 sums up to 169.7 billion kWh and thus almost equals the all-time high of the operating year 1997, which was at 170.4 billion kWh. Power generation in nuclear power plants has been contributing well a third of the total domestic power supply since 1988, which is about ten per cent of the national power consumption. This is one aspect of the information contained in the annual report of Deutsches Atomforum e.V. Expressing this 1999 output in terms of carbon dioxide emissions avoided, the figure is 170 million tonnes. This is equal to the annual CO2 emissions in 1999 emanating from road transport and traffic in Germany. From the very beginning of nuclear power generation in 1961 until today, aggregated nuclear power generation from uranium and plutonium fuels amounts to about 2.8 billion kWh, which means that over this period, more than two billion tonnes of carbon dioxide emissions have been avoided. (orig./CB) [de
-
Transparency and spontaneous emission in a densely doped photonic band gap material
Energy Technology Data Exchange (ETDEWEB)
Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)
2006-12-28
The susceptibility has been calculated for a photonic crystal in the presence of spontaneous cancellation and dipole-dipole interaction. The crystal is densely doped with an ensemble of four-level nano-particles in Y-type configuration. Probe and a pump laser fields are applied to manipulate the absorption coefficient of the system. The expression of the susceptibility has been calculated in the linear response regime of the probe field but nonlinear terms are included for the pump field. It is found that in the presence of spontaneous emission cancellation there is an increase in the height of the two absorption peaks however the phenomenon of electromagnetically induced transparency (EIT) is not affected. On the other hand, there is a change in the height and location of the two peaks in the presence of dipole-dipole interactions. For certain values the particle density of the system can be switched from the EIT state to the non-EIT state. It is also found that when the resonance energies for two spontaneous emission channels lie close to the band edge, the EIT phenomenon disappears.
-
On the blue emission of a novel solution-processed stilbenoid dendrimer thin film for OLED displays
Energy Technology Data Exchange (ETDEWEB)
Coya, C. [Escuela Superior de Ciencias Experimentales y Tecnologia, Universidad Rey Juan Carlos, 28933 Madrid (Spain)], E-mail: carmen.coya@urjc.es; Andres, A. de [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid (Spain); Gomez, R.; Seoane, C.; Segura, J.L. [Departamento de Quimica Organica, Facultad de Ciencias Quimicas, Universidad Complutense, 28040 Madrid (Spain)
2008-05-15
A novel blue fluorescent first generation stilbenoid dendrimer built on the 1,3,5-benzene core and endowed with a periphery of hexyloxy branches has been synthesized and is proposed as an active layer for organic light-emitting diodes processed by spin coating. In this work, we have obtained homogeneous thin films with blue emission (2.8 eV) by spin coating instead of the usual evaporation method used for low-weight molecular materials. The absorption and emission spectra of the films are analyzed and compared to that of the molecule. The obtained results show the dependence of the absorption and emission properties on the morphology and the dendrimer aggregation in the film. The effect of inter-dendrimer interactions leads to a broadening of the absorption bands and to a reduction of the threshold as the aggregation increases. The most efficient solid-state emission is for the films obtained from chloroform as solvent in the precursor solution.
-
Coherent control of spontaneous emission near a photonic band edge
International Nuclear Information System (INIS)
Woldeyohannes, Mesfin; John, Sajeev
2003-01-01
We demonstrate the coherent control of spontaneous emission for a three-level atom located within a photonic band gap (PBG) material, with one resonant frequency near the edge of the PBG. Spontaneous emission from the three-level atom can be totally suppressed or strongly enhanced depending on the relative phase between the steady-state control laser coupling the two upper levels and the pump laser pulse used to create an excited state of the atom in the form of a coherent superposition of the two upper levels. Unlike the free-space case, the steady-state inversion of the atomic system is strongly dependent on the externally prescribed initial conditions. This non-zero steady-state population is achieved by virtue of the localization of light in the vicinity of the emitting atom. It is robust to decoherence effects provided that the Rabi frequency of the control laser field exceeds the rate of dephasing interactions. As a result, such a system may be relevant for a single-atom, phase-sensitive optical memory device on the atomic scale. The protected electric dipole within the PBG provides a basis for a qubit to encode information for quantum computations. A detailed literature survey on the nature, fabrication and applications of PBG materials is presented to provide context for this research. (phd tutorial)
-
MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day V006
National Aeronautics and Space Administration — MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day (MOD21A1D.006). A new suite of MODIS Land Surface Temperature (LST) and...
-
MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day V006
National Aeronautics and Space Administration — MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Day (MYD21A1D.006). A new suite of MODIS Land Surface Temperature (LST) and...
-
MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night V006
National Aeronautics and Space Administration — MODIS/Terra Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night (MOD21A1N.006). A new suite of MODIS Land Surface Temperature (LST) and...
-
MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night V006
National Aeronautics and Space Administration — MODIS/Aqua Land Surface Temperature/3-Band Emissivity Daily L3 Global 1km SIN Grid Night (MYD21A1N.006). A new suite of MODIS Land Surface Temperature (LST) and...
-
International Nuclear Information System (INIS)
Wang, M.Q.; Marr, W.W.
1994-01-01
Electric vehicles (EVs) can reduce greenhouse gas emissions, relative to emissions from gasoline-fueled vehicles. However, those studies have not considered all aspects that determine greenhouse gas emissions from both gasoline vehicles (GVs) and EVs. Aspects often overlooked include variations in vehicle trip characteristics, inclusion of all greenhouse gases, and vehicle total fuel cycle. In this paper, we estimate greenhouse gas emission reductions for EVs, including these important aspects. We select four US cities (Boston, Chicago, Los Angeles, and Washington, D.C.) and six countries (Australia, France, Japan, Norway, the United Kingdom, and the United States) and analyze greenhouse emission impacts of EVs in each city or country. We also select six driving cycles developed around the world (i.e., the US federal urban driving cycle, the Economic Community of Europe cycle 15, the Japanese 10-mode cycle, the Los Angeles 92 cycle, the New York City cycle, and the Sydney cycle). Note that we have not analyzed EVs in high-speed driving (e.g., highway driving), where the results would be less favorable to EVs; here, EVs are regarded as urban vehicles only. We choose one specific driving cycle for a given city or country and estimate the energy consumption of four-passenger compact electric and gasoline cars in the given city or country. Finally, we estimate total fuel cycle greenhouse gas emissions of both GVs and EVs by accounting for emissions from primary energy recovery, transportation, and processing; energy product transportation; and powerplant and vehicle operations
-
Workman, Jonathan; Keiter, P.; Tierney, T.; Tierney, H.; Belle, K.; Magelssen, G.; Peterson, R.; Fryer, C.; Comley, A.; Taylor, M.
2007-11-01
Experiments were performed on the OMEGA laser system at the University of Rochester to measure radiation temperature in hohlraum-heated foams. Using x-ray absorption spectroscopy in the 3-6-keV x-ray range allows temperature determination in the range of 50-200-eV. Uranium, bismuth and gold M-shell x-ray emission were used as broadband backlighters. Backlighter absorption through heated chlorinated foam and scandium tracers were used to determine temperatures. The development of this technique in the temperature range of 100-200-eV will be used for platform development of future NIF experiments. We will present time-integrated and time-resolved measurements of x-ray emission from the backlighter materials as well as absorption measurements trough the heated tracer materials. We will also present future directions in the development of this platform.
-
Energy Technology Data Exchange (ETDEWEB)
Yan, Baojun, E-mail: yanbj@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Liu, Shulin [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Yang, Yuzhen [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Department of Physics, Nanjing University, Nanjing P. O. Box 210093 (China); Heng, Yuekun [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China)
2016-05-15
Highlights: • Band alignment of MgO/Zn{sub 0.8}Al{sub 0.2}O heterojunction were investigated systematically using charge corrected X-ray photoelectron spectroscopy. • Differential charging phenomenon is observed in determination VBOs of insulator/semiconductor heterojunction. • Valence and conduction band offsets have been determined to be 0.72 ± 0.11 eV and 3.26 ± 0.11 eV, respectively, with a type-II band line-up. - Abstract: Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn{sub 0.8}Al{sub 0.2}O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn{sub 0.8}Al{sub 0.2}O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn{sub 0.8}Al{sub 0.2}O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔE{sub V}) and conduction band offset (ΔE{sub C}) for the interface of the MgO/Zn{sub 0.8}Al{sub 0.2}O heterostructure have been constructed. An accurate value of ΔE{sub V} = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn{sub 0.8}Al{sub 0.2}O, a type-II heterojunction with a ΔE{sub C} of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.
-
Compact, self-contained enhanced-vision system (EVS) sensor simulator
Tiana, Carlo
2007-04-01
We describe the model SIM-100 PC-based simulator, for imaging sensors used, or planned for use, in Enhanced Vision System (EVS) applications. Typically housed in a small-form-factor PC, it can be easily integrated into existing out-the-window visual simulators for fixed-wing or rotorcraft, to add realistic sensor imagery to the simulator cockpit. Multiple bands of infrared (short-wave, midwave, extended-midwave and longwave) as well as active millimeter-wave RADAR systems can all be simulated in real time. Various aspects of physical and electronic image formation and processing in the sensor are accurately (and optionally) simulated, including sensor random and fixed pattern noise, dead pixels, blooming, B-C scope transformation (MMWR). The effects of various obscurants (fog, rain, etc.) on the sensor imagery are faithfully represented and can be selected by an operator remotely and in real-time. The images generated by the system are ideally suited for many applications, ranging from sensor development engineering tradeoffs (Field Of View, resolution, etc.), to pilot familiarization and operational training, and certification support. The realistic appearance of the simulated images goes well beyond that of currently deployed systems, and beyond that required by certification authorities; this level of realism will become necessary as operational experience with EVS systems grows.
-
[Research on the emission spectrum of NO molecule's γ-band system by corona discharge].
Zhai, Xiao-dong; Ding, Yan-jun; Peng, Zhi-min; Luo, Rui
2012-05-01
The optical emission spectrum of the gamma-band system of NO molecule, A2 sigma+ --> X2 pi(r), has been analyzed and calculated based on the energy structure of NO molecule' doublet states. By employing the theory of diatomic molecular Spectra, some key parameters of equations for the radiative transition intensity were evaluated theoretically, including the potentials of the doublet states of NO molecule's upper and lower energy levels, the electronic transition moments calculated by using r-centroid approximation method, and the Einstein coefficient of different vibrational and rotational levels. The simulated spectrum of the gamma-band system was calculated as a function of different vibrational and rotational temperature. Compared to the theoretical spectroscopy, the measured results were achieved from corona discharge experiments of NO and N2. The vibrational and rotational temperatures were determined approximately by fitting the measured spectral intensities with the calculated ones.
-
Shen, Wei; Han, Weijian; Wallington, Timothy J
2014-06-17
China's oil imports and greenhouse gas (GHG) emissions have grown rapidly over the past decade. Addressing energy security and GHG emissions is a national priority. Replacing conventional vehicles with electric vehicles (EVs) offers a potential solution to both issues. While the reduction in petroleum use and hence the energy security benefits of switching to EVs are obvious, the GHG benefits are less obvious. We examine the current Chinese electric grid and its evolution and discuss the implications for EVs. China's electric grid will be dominated by coal for the next few decades. In 2015 in Beijing, Shanghai, and Guangzhou, EVs will need to use less than 14, 19, and 23 kWh/100 km, respectively, to match the 183 gCO2/km WTW emissions for energy saving vehicles. In 2020, in Beijing, Shanghai, and Guangzhou EVs will need to use less than 13, 18, and 20 kWh/100 km, respectively, to match the 137 gCO2/km WTW emissions for energy saving vehicles. EVs currently demonstrated in China use 24-32 kWh/100 km. Electrification will reduce petroleum imports; however, it will be very challenging for EVs to contribute to government targets for GHGs emissions reduction.
-
Leser, William P.; Yuan, Fuh-Gwo; Leser, William P.
2013-01-01
A method of numerically estimating dynamic Green's functions using the finite element method is proposed. These Green's functions are accurate in a limited frequency range dependent on the mesh size used to generate them. This range can often match or exceed the frequency sensitivity of the traditional acoustic emission sensors. An algorithm is also developed to characterize an acoustic emission source by obtaining information about its strength and temporal dependence. This information can then be used to reproduce the source in a finite element model for further analysis. Numerical examples are presented that demonstrate the ability of the band-limited Green's functions approach to determine the moment tensor coefficients of several reference signals to within seven percent, as well as accurately reproduce the source-time function.
-
DC Fast-Charging Stations for EVs Controlled by a Local Battery Storage in Low Voltage Grids
DEFF Research Database (Denmark)
Gjelaj, Marjan; Træholt, Chresten; Hashemi Toghroljerdi, Seyedmostafa
2017-01-01
Electric Vehicles (EVs) are representing a great opportunity for major car manufacturers to invest resources in new technologies in order to support sustainable transportation and the reduction of 퐂퐎ퟐ emissions, in particular in the metropolitan areas. In recent years, the increasing penetration...
-
Modulation of band gap by an applied electric field in BN-based heterostructures
Luo, M.; Xu, Y. E.; Zhang, Q. X.
2018-05-01
First-principles density functional theory (DFT) calculations are performed on the structural and electronic properties of the SiC/BN van der Waals (vdW) heterostructures under an external electric field (E-field). Our results reveal that the SiC/BN vdW heterostructure has a direct band gap of 2.41 eV in the raw. The results also imply that electrons are likely to transfer from BN to SiC monolayer due to the deeper potential of BN monolayer. It is also observed that, by applying an E-field, ranging from -0.50 to +0.65 V/Å, the band gap decreases from 2.41 eV to zero, which presents a parabola-like relationship around 0.0 V/Å. Through partial density of states (PDOS) plots, it is revealed that, p orbital of Si, C, B, and N atoms are responsible for the significant variations of band gap. These obtained results predict that, the electric field tunable band gap of the SiC/BN vdW heterostructures carries potential applications for nanoelectronics and spintronic device applications.
-
Conduction-band valley spin splitting in single-layer H-T l2O
Ma, Yandong; Kou, Liangzhi; Du, Aijun; Huang, Baibiao; Dai, Ying; Heine, Thomas
2018-02-01
Despite numerous studies, coupled spin and valley physics is currently limited to two-dimensional (2D) transition-metal dichalcogenides (TMDCs). Here, we predict an exceptional 2D valleytronic material associated with the spin-valley coupling phenomena beyond 2D TMDCs—single-layer (SL) H-T l2O . It displays large valley spin splitting (VSS), significantly larger than that of 2D TMDCs, and a finite band gap, which are both critically attractive for the integration of valleytronics and spintronics. More importantly, in sharp contrast to all the experimentally confirmed 2D valleytronic materials, where the strong valence-band VSS (0.15-0.46 eV) supports the spin-valley coupling, the VSS in SL H-T l2O is pronounced in its conduction band (0.61 eV), but negligibly small in its valence band (21 meV), thus opening a way for manipulating the coupled spin and valley physics. Moreover, SL H-T l2O possesses extremely high carrier mobility, as large as 9.8 ×103c m2V-1s-1 .
-
Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks
Mitrovic, Ivona Z.
2011-07-01
TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.
-
International Nuclear Information System (INIS)
Medvedev, A.V.; Feoktistov, N.A.; Pevtsov, A.B.; Golubev, V.G.
2005-01-01
Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO x :H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge
-
Time-Dependent Response Versus Scan Angle for MODIS Reflective Solar Bands
Sun, Junqiang; Xiong, Xiaoxiong; Angal, Amit; Chen, Hongda; Wu, Aisheng; Geng, Xu
2014-01-01
The Moderate Resolution Imaging Spectroradiometer (MODIS) instruments currently operate onboard the National Aeronautics and Space Administration (NASA's) Terra and Aqua spacecraft, launched on December 18, 1999 and May 4, 2002, respectively. MODIS has 36 spectral bands, among which 20 are reflective solar bands (RSBs) covering a spectral range from 0.412 to 2.13 µm. The RSBs are calibrated on orbit using a solar diffuser (SD) and an SD stability monitor and with additional measurements from lunar observations via a space view (SV) port. Selected pseudo-invariant desert sites are also used to track the RSB on-orbit gain change, particularly for short-wavelength bands. MODIS views the Earth surface, SV, and the onboard calibrators using a two-sided scan mirror. The response versus scan angle (RVS) of the scan mirror was characterized prior to launch, and its changes are tracked using observations made at different angles of incidence from onboard SD, lunar, and Earth view (EV) measurements. These observations show that the optical properties of the scan mirror have experienced large wavelength-dependent degradation in both the visible and near infrared spectral regions. Algorithms have been developed to track the on-orbit RVS change using the calibrators and the selected desert sites. These algorithms have been applied to both Terra and Aqua MODIS Level 1B (L1B) to improve the EV data accuracy since L1B Collection 4, refined in Collection 5, and further improved in the latest Collection 6 (C6). In C6, two approaches have been used to derive the time-dependent RVS for MODIS RSB. The first approach relies on data collected from sensor onboard calibrators and mirror side ratios from EV observations. The second approach uses onboard calibrators and EV response trending from selected desert sites. This approach is mainly used for the bands with much larger changes in their time-dependent RVS, such as the Terra MODIS bands 1-4, 8, and 9 and the Aqua MODIS bands 8- and 9
-
International Nuclear Information System (INIS)
Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.
2015-01-01
Reflection electron energy loss spectra from some insulating materials (CaCO 3 , Li 2 CO 3 , and SiO 2 ) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO 2 , good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E gap ) 1.5 . For CaCO 3 , the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li 2 CO 3 (7.5 eV) is the first experimental estimate
-
Physical reasons of emission transformation in infrared CdSeTe/ZnS quantum dots at bioconjugation
Torchynska, T. V.
2015-04-01
The core/shell CdSeTe/ZnS quantum dots (QDs) with emission at 780-800 nm (1.55-1.60 eV) have been studied by means of photoluminescence (PL) and Raman scattering methods in the nonconjugated state and after conjugation to different antibodies (Ab): (i) mouse monoclonal [8C9] human papilloma virus Ab, anti-HPV 16-E7 Ab, (ii) mouse monoclonal [C1P5] human papilloma virus HPV16 E6+HPV18 E6 Ab, and (iii) pseudo rabies virus (PRV) Ab. The transformations of PL and Raman scattering spectra of QDs, stimulated by conjugated antibodies, have been revealed and discussed. The energy band diagram of core/shell CdSeTe/ZnS QDs has been designed that helps to analyze the PL spectra and their transformations at the bioconjugation. It is shown that the core in CdSeTe/ZnS QDs is complex and including the type II quantum well. The last fact permits to explain the nature of infrared (IR) optical transitions (1.55-1.60 eV) and the high energy PL band (1.88-1.94 eV) in the nonconjugated and bioconjugated QDs. A set of physical reasons has been analyzed with the aim to explain the transformation of PL spectra in bioconjugated QDs. Finally it is shown that two factors are responsible for the PL spectrum transformation at bioconjugation to charged antibodies: (i) the change of energy band profile in QDs and (ii) the shift of QD energy levels in the strong quantum confinement case. The effect of PL spectrum transformation is useful for the study of QD bioconjugation to specific antibodies and can be a powerful technique for early medical diagnostics.
-
The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films
Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam
2018-02-01
Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.
-
Energy Technology Data Exchange (ETDEWEB)
Siemion, Andrew P. V.; Korpela, Eric; Werthimer, Dan; Cobb, Jeff; Lebofsky, Matt; Marcy, Geoffrey W. [University of California, Berkeley, 110 Sproul Hall, Berkeley, CA 94720 (United States); Demorest, Paul; Maddalena, Ron J.; Langston, Glen [National Radio Astronomy Observatory, 520 Edgemont Rd Charlottesville, VA 22903 (United States); Howard, Andrew W. [Institute for Astronomy, University of Hawaii, 640 North A' ohoku Place, 209 Hilo, HI 96720-2700 (United States); Tarter, Jill [SETI Institute, 189 Bernardo Ave 100 Mountain View, CA 94043 (United States)
2013-04-10
We present a targeted search for narrow-band (<5 Hz) drifting sinusoidal radio emission from 86 stars in the Kepler field hosting confirmed or candidate exoplanets. Radio emission less than 5 Hz in spectral extent is currently known to only arise from artificial sources. The stars searched were chosen based on the properties of their putative exoplanets, including stars hosting candidates with 380 K > T{sub eq} > 230 K, stars with five or more detected candidates or stars with a super-Earth (R{sub p} < 3 R{sub Circled-Plus }) in a >50 day orbit. Baseband voltage data across the entire band between 1.1 and 1.9 GHz were recorded at the Robert C. Byrd Green Bank Telescope between 2011 February and April and subsequently searched offline. No signals of extraterrestrial origin were found. We estimate that fewer than {approx}1% of transiting exoplanet systems host technological civilizations that are radio loud in narrow-band emission between 1 and 2 GHz at an equivalent isotropically radiated power (EIRP) of {approx}1.5 Multiplication-Sign 10{sup 21} erg s{sup -1}, approximately eight times the peak EIRP of the Arecibo Planetary Radar, and we limit the number of 1-2 GHz narrow-band-radio-loud Kardashev type II civilizations in the Milky Way to be <10{sup -6} M{sub Sun }{sup -1}. Here we describe our observations, data reduction procedures and results.
-
Tunable band structures in digital oxides with layered crystal habits
Shin, Yongjin; Rondinelli, James M.
2017-11-01
We use density functional calculations to show that heterovalent cation-order sequences enable control over band-gap variations up to several eV and band-gap closure in the bulk band insulator LaSrAlO4. The band-gap control originates from the internal electric fields induced by the digital chemical order, which induces picoscale band bending; the electric-field magnitude is mainly governed by the inequivalent charged monoxide layers afforded by the layered crystal habit. Charge transfer and ionic relaxations across these layers play secondary roles. This understanding is used to construct and validate a descriptor that captures the layer-charge variation and to predict changes in the electronic gap in layered oxides exhibiting antisite defects and in other chemistries.
-
Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui
2018-01-01
The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).
-
Theoretical and experimental studies of the ZnSe/CuInSe2 heterojunction band offset
International Nuclear Information System (INIS)
Nelson, A.J.; Schwerdtfeger, C.R.; Wei, S.; Zunger, A.; Rioux, D.; Patel, R.; Hoechst, H.
1993-01-01
We report first-principles band structure calculations that show that ZnSe/CuInSe 2 has a significant valence band offset (VBO, ΔE v ): 0.70±0.05 eV for the relaxed interface and 0.60±0.05 eV for the coherent interface. These large values demonstrate the failure of the common anion rule. This is traced to a stronger Cu,d-Se,p level repulsion in CuInSe 2 than the Zn,d-Se,p repulsion in ZnSe. The VBO was then studied by synchrotron radiation soft x-ray photoemission spectroscopy. ZnSe overlayers were sequentially grown in steps on n-type CuInSe 2 (112) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the In 4d and Zn 3d core lines. Results of these measurements reveal that the VBO is ΔE v =0.70±0.15 eV, in good agreement with the first-principles prediction
-
Modification of band offsets of InGaZnO{sub 4}/Si heterojunction through nitrogenation treatment
Energy Technology Data Exchange (ETDEWEB)
Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); He, G., E-mail: hegang@ahu.edu.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Wang, P.H. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.S. [National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China)
2015-10-25
The effect of nitrogen on the band offset of sputtering-derived InZnGaO{sub 4} (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been successfully incorporated into the IGZO film. By using In 3d{sub 5/2}, In 3d{sub 3/2} and Ga 3d core level (CL) XPS spectra as references, values of valence band offsets (ΔE{sub v}) of have been determined to be 2.56 ± 0.02 and 2.44 ± 0.02 eV for IGZO/Si and IGZO:N/Si heterojunctions, respectively. Using the experimental band gap of 3.59 and 3.50 eV of the IGZO/Si and IGZO:N/Si, the calculated values of conduction band offset (ΔE{sub c}) is 0.09 ± 0.01 and 0.06 ± 0.01 eV, respectively. The results indicate that nitrogen incorporation leads to the reduction in band gap and ΔE{sub v} and the slight effect on the ΔE{sub c} has also been detected. - Highlights: • α-IGZO/Si and α-IGZO:N/Si heterostructures have been obtained by sputtering. • Nitrogen dependent ΔE{sub v} and ΔE{sub v} have been determined by XPS measurements. • Nitrogen incorporation in IGZO leads to the reduced band gap and increased ΔE{sub v}. • Nitrogen incorporation has no apparent effect on the ΔE{sub c} of α-IGZO/Si.
-
Secondary Use of PHEV and EV Batteries: Opportunities & Challenges (Presentation)
Energy Technology Data Exchange (ETDEWEB)
Neubauer, J.; Pesaran, A.; Howell, D.
2010-05-01
NREL and partners will investigate the reuse of retired lithium ion batteries for plug-in hybrid, hybrid, and electric vehicles in order to reduce vehicle costs and emissions and curb our dependence on foreign oil. A workshop to solicit industry feedback on the process is planned. Analyses will be conducted, and aged batteries will be tested in two or three suitable second-use applications. The project is considering whether retired PHEV/EV batteries have value for other applications; if so, what are the barriers and how can they be overcome?
-
High resolution emission Fourier transform infrared spectra of the 4p-5s and 5p-6s bands of ArH.
Baskakov, O I; Civis, S; Kawaguchi, K
2005-03-15
In the 2500-8500 cm(-1) region several strong emission bands of (40)ArH were observed by Fourier transform spectroscopy through a dc glow discharge in a mixture of argon and hydrogen. Rotational-electronic transitions of the two previously unstudied 4p-5s and 5p-6s,v = 0-0, bands of (40)ArH were measured and assigned in the 6060 and 3770 cm(-1) regions, respectively. A simultaneous fit of the emission transitions of the 4p-5s and 5p-6s bands and an extended set of transitions of the 6s-4p band observed by Dabrowski, Tokaryk, and Watson [J. Mol. Spectrosc. 189, 95 (1998)] and remeasured in the present work yielded consistent values of the spectroscopic parameters of the electronic states under investigation. In the branch of the 4p-5s band with transitions of type (Q)Q(f(3)e) we observed a narrowing in the linewidths with increasing rotational quantum number N. The rotational dependence of the linewidth is caused by predissociation of the 5s state by the repulsive ground 4s state through homogeneous coupling and changes in overlap integrals of the vibrational wave functions with the rotational level. Analysis was based on the Fermi's golden rule approximation model. In the 4p-5s band region a vibrational sequence ofv(')-v(")=1-1, 2-2, and 3-3 were recorded and a number of transitions belonging to the strongest (Q)Q(f(3)e) form branch of the 1-1 band were analyzed.
-
Bijleveld, Johan C.; Karsten, Bram P.; Mathijssen, Simon G.J.; Wienk, Martijn M.; Leeuw, Dago M. de; Janssen, René A.J.
2011-01-01
Four small band gap semiconducting copolymers based on electron deficient diketopyrrolopyrrole alternating with electron rich trimers containing furan and benzene or thiophene have been synthesized via Suzuki polymerization. The polymers have optical band gaps between 1.4 and 1.6 eV, optimized for
-
International Nuclear Information System (INIS)
Karan, Ebrahim; Asadi, Somayeh; Ntaimo, Lewis
2016-01-01
The magnitude of building- and transportation-related GHG (greenhouse gas) emissions makes the adoption of all-EVs (electric vehicles) powered with renewable power as one of the most effective strategies to reduce emission of GHGs. This paper formulates the problem of GHG mitigation strategy under uncertain conditions and optimizes the strategies in which EVs are powered by solar energy. Under a pre-specified budget, the objective is to determine the type of EV and power generation capacity of the solar system in such a way as to maximize GHG emissions reductions. The model supports the three primary solar systems: off-grid, grid-tied, and hybrid. First, a stochastic optimization model using probability distributions of stochastic variables and EV and solar system specifications is developed. The model is then validated by comparing the estimated values of the optimal strategies and actual values. It is found that the mitigation strategies in which EVs are powered by a hybrid solar system lead to the best cost-expected reduction of CO_2 emissions ratio. The results show an accuracy of about 4% for mitigation strategies in which EVs are powered by a grid-tied or hybrid solar system and 11% when applied to estimate the CO_2 emissions reductions of an off-grid system. - Highlights: • The problem of GHG mitigation is formulated as a stochastic optimization problem. • The objective is to maximize CO_2 emissions reductions within a specified budget. • The stochastic model is validated using actual data. • The results show an estimation accuracy of 4–11%.
-
EV and HP Scheduling with Network Constraints in the Nordic Region
DEFF Research Database (Denmark)
Liu, Zhaoxi; Wu, Qiuwei
Large scale deployment of electric vehicles (EVs) and heat pumps (HPs) holds great potential not only to limit the greenhouse gas (GHG) emission and fossil fuel consumption in the transportation and heating sectors but also to cope with the intermittency due to the further utilization of renewable...... energy sources (RES) in the Nordic region including Denmark, Finland, Norway and Sweden. It is therefore an important pathway to the goal of achieving a carbon neutral electric power system in the Nordic region by 2050....
-
Development of battery management systems (BMS) for electric vehicles (EVs) in Malaysia
Salehen P.M.W.; Su’ait M.S.; Razali H.; Sopian K.
2017-01-01
Battery Management Systems (BMS) is an electronic devices component, which is a vital fundamental device connected between the charger and the battery of the hybrid or electric vehicle (EV) systems. Thus, BMS significantly enable for safety protection and reliable battery management by performing of monitoring charge control, state evaluation, reporting the data and functionalities cell balancing. To date, 97.1% of Malaysian CO2 emissions are mainly caused by transportation activities and the...
-
How Do The EV Project Participants Feel About Their EVS?
Energy Technology Data Exchange (ETDEWEB)
Francfort, James E. [Idaho National Lab. (INL), Idaho Falls, ID (United States)
2015-02-01
The EV Project is an infrastructure study that enrolled over 8,000 residential participants. These participants purchased or leased a Nissan Leaf battery electric vehicle (BEV) or Chevrolet Volt extended range electric vehicle (EREV) and were among the first to explore this new electric drive technology. Collectively, BEV, EREV, and plug-in hybrid electric vehicles (PHEVs) are called plug-in electric vehicles (PEVs). The EV Project participants were very cooperative and enthusiastic about their participation in the project and very supportive in providing feedback and information. The information and attitudes of these participants concerning their experience with their PEVs were solicited using a survey in June 2013. At that time, some had up to 3 years of experience with their PEVs.
-
MODIS on-orbit thermal emissive bands lifetime performance
Madhavan, Sriharsha; Wu, Aisheng; Chen, Na; Xiong, Xiaoxiong
2016-05-01
MODerate resolution Imaging Spectroradiometer (MODIS), a leading heritage sensor in the fleet of Earth Observing System for the National Aeronautics and Space Administration (NASA) is in space orbit on two spacecrafts. They are the Terra (T) and Aqua (A) platforms. Both instruments have successfully continued to operate beyond the 6 year design life time, with the T-MODIS currently functional beyond 15 years and the A-MODIS operating beyond 13 years respectively. The MODIS sensor characteristics include a spectral coverage from 0.41 μm - 14.4 μm, of which wavelengths ranging from 3.7 μm - 14. 4 μm cover the thermal infrared region also referred to as the Thermal Emissive Bands (TEBs). The TEBs is calibrated using a v-grooved BlackBody (BB) whose temperature measurements are traceable to the National Institute of Standards and Technology temperature scales. The TEBs calibration based on the onboard BB is extremely important for its high radiometric fidelity. In this paper, we provide a complete characterization of the lifetime instrument performance of both MODIS instruments in terms of the sensor gain, the Noise Equivalent difference Temperature, key instrument telemetry such as the BB lifetime trends, the instrument temperature trends, the Cold Focal Plane telemetry and finally, the total assessed calibration uncertainty of the TEBs.
-
Mechanism of negative hydrogen ion emission from heated saline hydrides
Energy Technology Data Exchange (ETDEWEB)
Kawano, Hiroyuki; Serizawa, Naoshi; Takeda, Makiko; Hasegawa, Seiji [Ehime Univ., Matsuyama (Japan). Faculty of Science
1997-02-01
To find a clue to the mechanism of negative hydrogen ion emission from a heated sample ({approx}10 mg) of powdery saline hydride (LiH or CaH{sub 2}) deposited on a molybdenum ribbon ({approx}0.1 cm{sup 2}), both the ionic and electronic emission currents were measured as a function of sample temperature ({approx}700 - 800 K), thereby yielding {approx}10{sup -15} - 10{sup -12} A of H{sup -} after mass analysis and {approx}10{sup -7} - 10{sup -5} A of thermal electron. Thermophysical analysis of these data indicates that the desorption energy (E{sup -}) of H{sup -} and work function ({phi}) of the emitting sample surface are 5.1 {+-} 0.3 and 3.1 {+-} 0.2 eV for LiH, respectively, while E{sup -} is 7.7 {+-} 0.3 eV and {phi} is 5.0 {+-} 0.2 eV for CaH{sub 2}. Thermochemical analysis based on our simple model on the emissions indicates that the values of E{sup -} - {phi} are 2.35 and 2.31 eV for LiH and CaH{sub 2}, respectively, which are in fair agreement with the respective values (2.1 {+-} 0.3 and 2.6 {+-} 0.3 eV) determined experimentally. This agreement indicates that the emission of H{sup -} is reasonably explained by our model from the viewpoint of reaction energy. (author)
-
Hu, Tao; Hong, Jisang
2015-10-28
Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, the phosphorus has a trouble of degradation due to oxidation. Hereby, we propose that the electrical and optical anisotropic properties can be preserved by encapsulating into hexagonal boron nitride (h-BN). We found that the h-BN contributed to enhancing the band gap of the phosphorene layer. Comparing the band gap of the pristine phosphorene layer, the band gap of the phosphorene/BN(1ML) system was enhanced by 0.15 eV. It was further enhanced by 0.31 eV in the BN(1ML)/phosphorene/BN(1ML) trilayer structure. However, the band gap was not further enhanced when we increased the thickness of the h-BN layers even up to 4 MLs. Interestingly, the anisotropic effective mass and optical property were still preserved in BN/phosphorene/BN heterostructures. Overall, we predict that the capping of phosphorene by the h-BN layers can be an excellent solution to protect the intrinsic properties of the phosphorene.
-
System Architecture Design for Electric Vehicle (EV) Systems
DEFF Research Database (Denmark)
Xu, Zhao; Wu, Qiuwei; Nielsen, Arne Hejde
2010-01-01
The electric vehicle (EV) system should fulfill the energy needs of EVs to meet the EV users’ driving requirements and enable the system service from EVs to support the power system operation with high penetration of renewable energy resources (RES) by providing necessary infrastructures. In orde...
-
Energy Technology Data Exchange (ETDEWEB)
Pustovarov, V.A., E-mail: vpustovarov@bk.ru [Ural Federal University, 19 Mira Street, 620002 Yekaterinburg (Russian Federation); Smirnova, T.P.; Lebedev, M.S. [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science, Novosibirsk 630090 (Russian Federation); Gritsenko, V.A. [Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation); Novosibirsk National Research University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Kirm, M. [Institute of Physics, University of Tartu, 14c Ravila, 50411 Tartu (Estonia)
2016-02-15
Low temperature time-resolved luminescence spectra in the region of 2.5–9.5 eV under soft X-ray excitation as well as time-resolved luminescence excitation spectra in the UV–VUV region (3.7–12 eV) of solid solutions Al{sub x}Hf{sub y}O{sub 1−x−y} thin films were investigated. The values of x and Al/Hf ratio were determined from X-ray photoelectron srectroscopy data. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO{sub 2} and Al{sub 2}O{sub 3} films, respectively. Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x=4; 17; 20 at%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and ns-luminescence decay kinetics, as well as changes in the time-resolved luminescence and luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed. - Highlights: • Low temperature time−resolved PL spectra were studied in a broad range (1.5−9.5 eV). • We carried out a luminescent control of point defects (anion vacancies) and self−trapped excitons. • We observed photoluminescence of excitons bound on defects. • We observed changes of photoluminescence properties with varying ratio components.
-
Band alignment of type I at (100ZnTe/PbSe interface
Directory of Open Access Journals (Sweden)
Igor Konovalov
2016-06-01
Full Text Available A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.
-
True photonic band-gap mode-control in VCSEL structures
DEFF Research Database (Denmark)
Romstad, F.; Madsen, M.; Birkedal, Dan
2003-01-01
Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....
-
Polarimetric Emission of Rain Events: Simulation and Experimental Results at X-Band
Directory of Open Access Journals (Sweden)
Nuria Duffo
2009-06-01
Full Text Available Accurate models are used today for infrared and microwave satellite radiance simulations of the first two Stokes elements in the physical retrieval, data assimilation etc. of surface and atmospheric parameters. Although in the past a number of theoretical and experimental works have studied the polarimetric emission of some natural surfaces, specially the sea surface roughened by the wind (Windsat mission, very limited studies have been conducted on the polarimetric emission of rain cells or other natural surfaces. In this work, the polarimetric emission (four Stokes elements of a rain cell is computed using the polarimetric radiative transfer equation assuming that raindrops are described by Pruppacher-Pitter shapes and that their size distribution follows the Laws-Parsons law. The Boundary Element Method (BEM is used to compute the exact bistatic scattering coefficients for each raindrop shape and different canting angles. Numerical results are compared to the Rayleigh or Mie scattering coefficients, and to Oguchi’s ones, showing that above 1-2 mm raindrop size the exact formulation is required to model properly the scattering. Simulation results using BEM are then compared to the experimental data gathered with a X-band polarimetric radiometer. It is found that the depolarization of the radiation caused by the scattering of non-spherical raindrops induces a non-zero third Stokes parameter, and the differential phase of the scattering coefficients induces a non-zero fourth Stokes parameter.
-
SPATIALLY RESOLVED M-BAND EMISSION FROM IO’S LOKI PATERA–FIZEAU IMAGING AT THE 22.8 m LBT
Energy Technology Data Exchange (ETDEWEB)
Conrad, Albert; Veillet, Christian [LBT Observatory, University of Arizona, 933 N. Cherry Ave., Tucson, AZ 85721 (United States); Kleer, Katherine de; Pater, Imke de [University of California at Berkeley, Berkeley, CA 94720 (United States); Leisenring, Jarron; Defrère, Denis; Hinz, Philip; Skemer, Andy [University of Arizona, 1428 E. University Blvd., Tucson, AZ 85721 (United States); Camera, Andrea La; Bertero, Mario; Boccacci, Patrizia [DIBRIS, University of Genoa, Via Dodecaneso 35, I-16146 Genova (Italy); Arcidiacono, Carmelo [INAF-Osservatorio Astronomico di Bologna, via Ranzani 1, I-40127 Bologna (Italy); Hofmann, Karl-Heinz; Schertl, Dieter; Weigelt, Gerd [Max Planck Institute for Radio Astronomy, Auf dem Hügel 69, D-53121 Bonn (Germany); Kürster, Martin [Max Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Rathbun, Julie [Planetary Science Institute, 1700 E. Fort Lowell, Tucson, AZ 85719 (United States); Skrutskie, Michael [University of Virginia, 530 McCormick Road, Charlottesville, VA 22904 (United States); Spencer, John [Southwest Research Institute, 1050 Walnut Ste. Suite 300, Boulder, CO 80302 (United States); Woodward, Charles E., E-mail: aconrad@lbto.org [Minnesota Institute for Astrophysics, 116 Church St., Minneapolis, MN 55455 (United States)
2015-05-15
The Large Binocular Telescope Interferometer mid-infrared camera, LMIRcam, imaged Io on the night of 2013 December 24 UT and detected strong M-band (4.8 μm) thermal emission arising from Loki Patera. The 22.8 m baseline of the Large Binocular Telescope provides an angular resolution of ∼32 mas (∼100 km at Io) resolving the Loki Patera emission into two distinct maxima originating from different regions within Loki’s horseshoe lava lake. This observation is consistent with the presence of a high-temperature source observed in previous studies combined with an independent peak arising from cooling crust from recent resurfacing. The deconvolved images also reveal 15 other emission sites on the visible hemisphere of Io including two previously unidentified hot spots.
-
Energy Technology Data Exchange (ETDEWEB)
Gomez-Gonzalez, Miguel A., E-mail: miguel.gomez@mncn.csic.es [Museo Nacional de Ciencias Naturales, CSIC, Jose Gutierrez Abascal 2, Madrid E-28006 (Spain); Garcia-Guinea, Javier, E-mail: guinea@mncn.csic.es [Museo Nacional de Ciencias Naturales, CSIC, Jose Gutierrez Abascal 2, Madrid E-28006 (Spain); Garrido, Fernando, E-mail: fernando.garrido@mncn.csic.es [Museo Nacional de Ciencias Naturales, CSIC, Jose Gutierrez Abascal 2, Madrid E-28006 (Spain); Townsend, Peter D., E-mail: pdtownsend@gmail.com [School of Science and Technology, University of Sussex, Brighton BN1 9QH (United Kingdom); Marco, Jose-Francisco, E-mail: jfmarco@iqfr.csic.es [Instituto de Química-Física Rocasolano, CSIC, Calle Serrano 119, Madrid E-28006 (Spain)
2015-03-15
The luminescence emission at 285 nm in natural K-feldspar has been studied by Russian groups and associated with thallium ions in structural positions of K{sup +} sites as artificially thallium-doped feldspars display the same emission band. Here attention is focussed on spectra of CL emission bands centered near 285 and 560 nm from paragenetic adularia, moscovite and quartz micro-inclusions. With accesorial thallium they show clear resemblances to each other. Associated sedimentary and hydrothermal aluminosilicate samples collected from Guadalix (Madrid, Spain) were analyzed with a wide range of experimental techniques including Environmental Scanning Electron Microscopy (ESEM) with an attached X-Ray Energy-Dispersive Spectrometer (EDS) and a cathodoluminescence probe (CL) and Electron Probe Microanalysis (EPMA), X-Ray Fluorescence Spectrometry (XRF), Inductively Coupled Plasma-Optical Emission Spectrometry (ICP-OES), Differential and Thermogravimetric Analyses (DTA-TG), radioluminescence (RL), Mössbauer spectroscopy and X-Ray Photoelectron Spectrometry (XPS). The luminescence emission bands at 285 and 560 nm seem to be associated with hydrous thallium–manganese complexes bonded to potassium-bearing aluminosilicates since various minerals such as K-feldspar, moscovite and quartz micro-inclusions display similar CL spectra, accesorial thallium and hydroxyl groups. The presence of iron introduces a brown color which is attributed to submicroscopic iron oxides detectable in the optical and chemical microanalysis, but this does not contribute to the luminescence emission. The XPS Mn 2p spectrum of the adularia sample at room temperature is composed of a spin–orbit doublet plus clear shake-up satellite structure ∼4 eV above the main photoemision lines and is consistent with Mn{sup 2+} in good agreement with the observed luminescence emission at 560 nm for aluminosilicates produced by a {sup 4}T1({sup 4}G)→{sup 6}A1({sup 6}S) transition in tetrahedrally
-
Energy Technology Data Exchange (ETDEWEB)
Fang, D. Q., E-mail: fangdqphy@mail.xjtu.edu.cn; Zhang, S. L. [MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi’an Jiaotong University, Xi’an 710049 (China)
2016-01-07
The band offsets of the ZnO/anatase TiO{sub 2} and GaN/ZnO heterojunctions are calculated using the density functional theory/generalized gradient approximation (DFT/GGA)-1/2 method, which takes into account the self-energy corrections and can give an approximate description to the quasiparticle characteristics of the electronic structure of semiconductors. We present the results of the ionization potential (IP)-based and interfacial offset-based band alignments. In the interfacial offset-based band alignment, to get the natural band offset, we use the surface calculations to estimate the change of reference level due to the interfacial strain. Based on the interface models and GGA-1/2 calculations, we find that the valence band maximum and conduction band minimum of ZnO, respectively, lie 0.64 eV and 0.57 eV above those of anatase TiO{sub 2}, while lie 0.84 eV and 1.09 eV below those of GaN, which agree well with the experimental data. However, a large discrepancy exists between the IP-based band offset and the calculated natural band offset, the mechanism of which is discussed. Our results clarify band alignment of the ZnO/anatase TiO{sub 2} heterojunction and show good agreement with the GW calculations for the GaN/ZnO heterojunction.
-
Energy Technology Data Exchange (ETDEWEB)
Vos, M. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Marmitt, G. G. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970 Porto Alegre, RS (Brazil); Finkelstein, Y. [Nuclear Research Center — Negev, Beer-Sheva 84190 (Israel); Moreh, R. [Physics Department, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)
2015-09-14
Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.
-
Statistical analysis of the electronic crosstalk correction in Terra MODIS Band 27
Madhavan, Sriharsha; Sun, Junqiang; Xiong, Xiaoxiong; Wenny, Brian N.; Wu, Aisheng
2014-10-01
The first MODerate-resolution Imaging Spectroradiometer (MODIS), also known as the Proto-Flight model (PFM), is on-board the Terra spacecraft and has completed 14 years of on orbit flight as of December 18, 2013. MODIS remotely senses the Earth in 36 spectral bands, with a wavelength range from 0.4 μm to 14.4 μm. The 36 bands can be subdivided into two groups based on their spectral responsivity as Reflective Solar Bands (RSBs) and Thermal Emissive Bands (TEBs). Band 27 centered at 6.77 μm is a TEB used to study the global water vapor distribution. It was found recently that this band has been severely affected by electronic crosstalk. The electronic crosstalk magnitude, its on-orbit change and calibration impact have been well characterized in our previous studies through the use of regularly scheduled lunar observations. Further, the crosstalk correction was implemented in Earth view (EV) images and quantified the improvements of the same. However, improvements remained desirable on several fronts. Firstly, the effectiveness of the correction needed to be analyzed spatially and radiometrically over a number of scenes. Also, the temporal aspect of the correction had to be investigated in a rigorous manner. In order to address these issues, a one-orbit analysis was performed on the Level 1A (L1A) scene granules over a ten year period from 2003 through 2012. Results have been quantified statistically and show a significant reduction of image striping, as well as removal of leaked signal features from the neighboring bands. Statistical analysis was performed by analyzing histograms of the one-orbit granules at a scene and detector level before and after correction. The comprehensive analysis and results reported in this paper will be very helpful to the scientific community in understanding the impacts of crosstalk correction on various scenes and could potentially be applied for future improvements of band 27 calibration and, therefore, its retrieval for the
-
Measurements and Studies of Secondary Electron Emission of Diamond Amplified Photocathode
Energy Technology Data Exchange (ETDEWEB)
Wu,Q.
2008-10-01
The Diamond Amplified Photocathode (DAP) is a novel approach to generating electrons. By following the primary electron beam, which is generated by traditional electron sources, with an amplifier, the electron beam available to the eventual application is increased by 1 to 2 orders of magnitude in current. Diamond has a very wide band gap of 5.47eV which allows for a good negative electron affinity with simple hydrogenation, diamond can hold more than 2000MV/m field before breakdown. Diamond also provides the best rigidity among all materials. These two characters offer the capability of applying high voltage across very thin diamond film to achieve high SEY and desired emission phase. The diamond amplifier also is capable of handling a large heat load by conduction and sub-nanosecond pulse input. The preparation of the diamond amplifier includes thinning and polishing, cleaning with acid etching, metallization, and hydrogenation. The best mechanical polishing available can provide high purity single crystal diamond films with no less than 100 {micro}m thickness and <15 nm Ra surface roughness. The ideal thickness for 700MHz beam is {approx}30 {micro}m, which requires further thinning with RIE or laser ablation. RIE can achieve atomic layer removal precision and roughness eventually, but the time consumption for this procedure is very significant. Laser ablation proved that with <266nm ps laser beam, the ablation process on the diamond can easily achieve removing a few microns per hour from the surface and <100nm roughness. For amplifier application, laser ablation is an adequate and efficient process to make ultra thin diamond wafers following mechanical polishing. Hydrogenation will terminate the diamond surface with monolayer of hydrogen, and form NEA so that secondary electrons in the conduction band can escape into the vacuum. The method is using hydrogen cracker to strike hydrogen atoms onto the bare diamond surface to form H-C bonds. Two independent
-
Defect states in microcrystalline silicon probed by photoluminescence spectroscopy
International Nuclear Information System (INIS)
Merdzhanova, T.; Carius, R.; Klein, S.; Finger, F.; Dimova-Malinovska, D.
2006-01-01
Photoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (μc-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T S ), which influences mainly the defect density, and silane concentration (SC), as Key parameter to control the microstructure of the material were varied. In high quality μc-Si:H films (T S = 185-200 deg. C) a PL band ('μc'-Si-band) is observed at ∼ 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In μc-Si:H films prepared at higher T S (> 300 deg. C), an additional PL band at ∼ 0.7 eV with a width of ∼ 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at ∼ 0.7 eV with increasing SC in contrast to the observed shift of the 'μc'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'μc'-Si-band shifts to lower energies (ii) a much weaker quenching for the 0.7 eV band compared to the 'μc'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in μc-Si:H is assigned tentatively to defect-related transitions in the crystalline phase
-
Bands dispersion and charge transfer in β-BeH2
Trivedi, D. K.; Galav, K. L.; Joshi, K. B.
2018-04-01
Predictive capabilities of ab-initio method are utilised to explore bands dispersion and charge transfer in β-BeH2. Investigations are carried out using the linear combination of atomic orbitals method at the level of density functional theory. The crystal structure and related parameters are settled by coupling total energy calculations with the Murnaghan equation of state. Electronic bands dispersion from PBE-GGA is reported. The PBE-GGA, and PBE0 hybrid functional, show that β-BeH2 is a direct gap semiconductor with 1.18 and 2.40 eV band gap. The band gap slowly decreases with pressure and beyond l00 GPa overlap of conduction and valence bands at the r point is observed. Charge transfer is studied by means of Mullikan population analysis.
-
Visible luminescence peculiar to sintered silica nanoparticles: Spectral and decay properties
Energy Technology Data Exchange (ETDEWEB)
Vaccaro, L. [Dipartimento di Fisica e Chimica, Università di Palermo, Via Archirafi 36, I-90123 Palermo (Italy); Cannas, M., E-mail: marco.cannas@unipa.it [Dipartimento di Fisica e Chimica, Università di Palermo, Via Archirafi 36, I-90123 Palermo (Italy); Cangialosi, C. [Dipartimento di Fisica e Chimica, Università di Palermo, Via Archirafi 36, I-90123 Palermo (Italy); Laboratoire H. Curien, UMR CNRS 5516, Université St-Etienne, St-Etienne F-42000 (France); Spallino, L.; Gelardi, F.M. [Dipartimento di Fisica e Chimica, Università di Palermo, Via Archirafi 36, I-90123 Palermo (Italy)
2015-10-15
We report that the sintering at 1000 °C of silica nanoparticles (an average diameter of 14 nm) produces a transparent sample that exhibits a bright visible emission under UV excitation. The use of time resolved luminescence spectroscopy and a tunable laser source allows us to single out three contributions centered at 1.96 eV, 2.41 eV and 3.43 eV. The excitation spectra of these emissions evidence bell shaped bands consistent with transitions between localized defects’ states. For each emission we study the intensity and the lifetime in the temperature range from 300 K down to 10 K, thus evidencing the competition between radiative and non-radiative processes in the optical cycle of luminescent centers. The comparison with the luminescence properties of silica, both nanoparticles and bulk, points out that the observed emissions are peculiar to the sintered silica network. - Highlights: • Solid-phase sintering at 1000 °C of silica nanoparticles produces a transparent sample. • Sintered silica nanoparticles emit a bright luminescence under UV excitation. • Three emissions, centered around 2.0 V, 2.4 eV and 3.4 eV, are distinguished on the basis of the excitation and decay properties. • The observed excitation/emission bands originate from localized defect states peculiar to the sintered silica network. • The luminescence efficiency decreases with temperature due to the activation of non-radiative channels.
-
Fit for competition with ``EVS `99``; Mit ``EVS `99`` fit fuer den Wettbewerb
Energy Technology Data Exchange (ETDEWEB)
Klawunn, K.H.; Wamhof, F. [Energieversorgung Suedsachsen AG, Chemnitz (Germany)
1998-05-01
The Energieversorgung Suedsachsen AG (EVS AG) located in Chemnitz faces up to the challenges of the competitive energy market. The company launched the project ``EVS `99`` in order to achieve the essential strategic goals: increase customer loyalty, concentrate on the core business, open up new operating areas, improve the core competences. This comprehensive business re-engineering project is intended to realise by the end of the business year 1997/98 an optimisation of all essential business processes, which are to focus on customer needs, establishment of an efficient, customer-oriented organisation in line with the strategy, and design of the required management and control systems. The technical and communication systems will be based on the SAP R/3 software in order to fully exploit the optimisation potentials. (orig./CB) [Deutsch] Die Energieversorgung Suedsachsen AG (EVS AG) in Chemnitz stellt sich aktiv den Herausforderungen des Wettbewerbs. Um die strategischen Unternehmensziele Erhoehung der Kundenbindung, Konzentration auf das Kerngeschaeft, Erschliessung neuer Geschaeftsfelder und Verbesserung der Kernkompetenzen zu erreichen, wurde das Projekt `EVS `99` initiiert. Durch dieses umfassende Business-Reengineering-Projekt wird bis Ende des Geschaeftsjahres 1997/98 die Optimierung aller wesentlichen Geschaeftsprozesse und deren Ausrichtung an den Kundenanforderungen, der Aufbau einer strategiekonformen, effizienten, kundenorientierten Organisation und die Gesaltung anforderungsgerechter Fuehrungs- und Steuerungssysteme realisiert. Begleitend wird die Software SAP R/3 im Unternehmen eingefuehrt, um umfassend, d.h. bereichsuebergreifend, alle Optimierungspotentiale zu nutzen. (orig./RHM)
-
Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali
2016-01-13
Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.
-
Ocean Surface Emissivity at L-band (1.4 GHz): The Dependence on Salinity and Roughness
LeVine, D. M.; Lang, R.; Wentz, F.; Messiner, T.
2012-01-01
A characterization of the emissivity of sea water at L-band is important for the remote sensing of sea surface salinity. Measurements of salinity are currently being made in the radio astronomy band at 1.413 GHz by ESA's Soil Moisture and Ocean Salinity (SMOS) mission and NASA's Aquarius instrument aboard the Aquarius/SAC-D observatory. The goal of both missions is accuracy on the order of 0.1 psu. This requires accurate knowledge of the dielectric constant of sea water as a function of salinity and temperature and also the effect of waves (roughness). The former determines the emissivity of an ideal (i.e. flat) surface and the later is the major source of error from predictions based on a flat surface. These two aspects of the problem of characterizing the emissivity are being addressed in the context of the Aquarius mission. First, laboratory measurements are being made of the dielectric constant of sea water. This is being done at the George Washington University using a resonant cavity. In this technique, sea water of known salinity and temperature is fed into the cavity along its axis through a narrow tube. The sea water changes the resonant frequency and Q of the cavity which, if the sample is small enough, can be related to the dielectric constant of the sample. An extensive set of measurements have been conducted at 1.413 GHz to develop a model for the real and imaginary part of the dielectric constant as a function of salinity and temperature. The results are compared to the predictions of models based on parameterization of the Debye resonance of the water molecule. The models and measurements are close; however, the differences are significant for remote sensing of salinity. This is especially true at low temperatures where the sensitivity to salinity is lowest.
-
Cation substitution induced blue-shift of optical band gap in ...
Indian Academy of Sciences (India)
2017-06-09
Jun 9, 2017 ... direct optical band gap of energy 3.37 eV and a large exci- ton binding ... this method with other earth–alkaline elements like Be and. Ca and these will .... where Cij are the elastic stiffness constants whose values are given by ...
-
Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions.
Kim, Sung Wook; Lee, Jaejun; Sung, Ji Ho; Seo, Dong-jae; Kim, Ilsoo; Jo, Moon-Ho; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin
2014-07-22
Since the discovery of graphene, growth of two-dimensional (2D) nanomaterials has greatly attracted attention. However, spontaneous growth of atomic two-dimensional (2D) materials is limitedly permitted for several layered-structure crystals, such as graphene, MoS2, and h-BN, and otherwise it is notoriously difficult. Here we report the gas-phase 2D growth of silicon (Si), that is cubic in symmetry, via dendritic growth and an interdendritic filling mechanism and to form Si nanosheets (SiNSs) of 1 to 13 nm in thickness. Thin SiNSs show strong thickness-dependent photoluminescence in visible range including red, green, and blue (RGB) emissions with the associated band gap energies ranging from 1.6 to 3.2 eV; these emission energies were greater than those from Si quantum dots (SiQDs) of the similar sizes. We also demonstrated that electrically driven white, as well as blue, emission in a conventional organic light-emitting diode (OLED) geometry with the SiNS assembly as the active emitting layers. Tunable light emissions in visible range in our observations suggest practical implications for novel 2D Si nanophotonics.
-
Exciton emission from bare and hybrid plasmonic GaN nanorods
Mohammadi, Fatemesadat; Kunert, Gerd; Hommel, Detlef; Ge, Jingxuan; Duscher, Gerd; Schmitzer, Heidrun; Wagner, Hans Peter
We study the exciton emission of hybrid gold nanoparticle/Alq3 (aluminiumquinoline)/wurtzite GaN nanorods. GaN nanorods of 1.5 μm length and 250 nm diameter were grown by plasma assisted MBE. Hybrid GaN nanorods were synthesized by organic molecular beam deposition. Temperature and power dependent time integrated (TI) and time resolved (TR) photoluminescence (PL) measurements were performed on bare and hybrid structures. Bare nanorods show donor (D0,X) and acceptor bound (A0,X) exciton emission at 3.473 eV and at 3.463 eV, respectively. TR-PL trace modeling reveal lifetimes of 240 ps and 1.4 ns for the (D0,X) and (A0,X) transition. 10 nm gold coated GaN nanorods show a significant PL quenching and (D0,X) lifetime shortening which is tentatively attributed to impact ionization of (D0,X) due to hot electron injection from the gold nanoparticles. This is supported by electron energy loss spectroscopy that shows a redshift of a midgap state transition indicating a reduction of a preexisting band-bending at the nanorod surface due to positive charging of the gold nanoparticles. Inserting a nominally 5 nm thick Alq3 spacer between the nanorod and the gold reduces the PL quenching and lifetime shortening. Plasmonic nanorods with a 30 nm thick Alq3 spacer reveal lifetimes which are nearly identical to uncoated GaN nanorods.
-
Shih, Ko-Han; Chang, Yin-Jung
2018-01-01
Solar energy conversion via internal photoemission (IPE) across a planar p-type Schottky junction is quantified for aluminum (Al) and copper (Cu) in the framework of direct transitions with non-constant matrix elements. Transition probabilities and k-resolved group velocities are obtained based on pseudo-wavefunction expansions and realistic band structures using the pseudopotential method. The k-resolved number of direct transitions, hole photocurrent density, quantum yield (QY), and the power conversion efficiency (PCE) under AM1.5G solar irradiance are subsequently calculated and analyzed. For Al, the parabolic and "parallel-band" effect along the U-W-K path significantly enhances the transition rate with final energies of holes mainly within 1.41 eV below the Fermi energy. For Cu, d-state hot holes mostly generated near the upper edge of 3d bands dominate the hole photocurrent and are weekly (strongly) dependent on the barrier height (metal film thickness). Hot holes produced in the 4s band behave just oppositely to their d-state counterparts. Non-constant matrix elements are shown to be necessary for calculations of transitions due to time-harmonic perturbation in Cu. Compared with Cu, Al-based IPE in p-type Schottky shows the highest PCE (QY) up to about 0.2673% (5.2410%) at ΦB = 0.95 eV (0.5 eV) and a film thickness of 11 nm (20 nm). It is predicted that metals with relatively dispersionless d bands (such as Cu) in most cases do not outperform metals with photon-accessible parallel bands (such as Al) in photon energy conversion using a planar p-type Schottky junction.
-
Effect of Pd ion doping in the band gap of SnO{sub 2} nanoparticles: structural and optical studies
Energy Technology Data Exchange (ETDEWEB)
Nandan, Brajesh; Venugopal, B. [Pondicherry University, Centre for Nanoscience and Technology (India); Amirthapandian, S.; Panigrahi, B. K. [Indira Gandhi Centre for Atomic Research, Ion Beam and Computer Simulation Section, Materials Science Group (India); Thangadurai, P., E-mail: thangadurai.p@gmail.com [Pondicherry University, Centre for Nanoscience and Technology (India)
2013-10-15
Pd ion doping has influenced the band gap of SnO{sub 2} nanoparticles. Undoped and Pd ion-doped SnO{sub 2} nanoparticles were synthesized by chemical co-precipitation method. A tetragonal phase of SnO{sub 2} with a grain size range of 7-13 nm was obtained (studied by X-ray diffraction and transmission electron microscopy). A decreasing trend in the particle size with increasing doping concentration was observed. The presence of Pd in doped SnO{sub 2} was confirmed by chemical analysis carried out by energy-dispersive spectroscopy in the transmission electron microscope. Diffuse reflectance spectra showed a blue shift in absorption with increasing palladium concentration. Band gap of SnO{sub 2} nanoparticles was estimated from the diffuse reflectance spectra using Kubelka-Munk function and it was increasing with the increase of Pd ion concentration from 3.73 to 4.21 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. All the samples showed a broad photoluminescence emission centered at 375 nm when excited at 270 nm. A systematic study on the structural and optical properties of SnO{sub 2} nanoparticles is presented.
-
Technology Roadmaps - Electric and plug-in hybrid electric vehicles (EV/PHEV)
Energy Technology Data Exchange (ETDEWEB)
NONE
2011-06-15
The mass deployment of electric and plug-in hybrid electric vehicles (EVs and PHEVs) that rely on low greenhouse gas (GHG) emission electricity generation has great potential to significantly reduce the consumption of petroleum and other high CO2-emitting transportation fuels. The vision of the Electric and Plug-in Hybrid (EV/PHEV) Vehicles Roadmap is to achieve by 2050 the widespread adoption and use of EVs and PHEVs, which together represent more than 50% of annual LDV (light duty vehicle) sales worldwide. In addition to establishing a vision, this roadmap sets strategic goals to achieve it, and identifies the steps that need to be taken to accomplish these goals. This roadmap also outlines the roles and collaboration opportunities for different stakeholders and shows how government policy can support the overall achievement of the vision. The strategic goals for attaining the widespread adoption and use of EVs and PHEVs worldwide by 2050 cover the development of the EV/PHEV market worldwide through 2030 and involve targets that align with global targets to stabilise GHG concentrations. These technology-specific goals include the following: Set targets for electric-drive vehicle sales; Develop coordinated strategies to support the market introduction of electric-drive vehicles; Improve industry understanding of consumer needs and behaviours; Develop performance metrics for characterising vehicles; Foster energy storage RD and D initiatives to reduce costs and address resource-related issues; and, Develop and implement recharging infrastructure. The roadmap outlines additional recommendations that must be considered in order to successfully meet the technology milestones and strategic goals. These recommendations include the following: Use a comprehensive mix of policies that provide a clear framework and balance stakeholder interests; Engage in international collaboration efforts; and, Address policy and industry needs at a national level. The IEA will work in an
-
Cao, Lei; Mao, Fengfeng; Pang, Zheng; Yi, Yao; Qiu, Feng; Tian, Ruiguang; Meng, Qingling; Jia, Zhiyuan; Bi, Shengli
2015-08-01
Enterovirus-71 (EV71) is a viral pathogen that causes severe cases of hand, foot and mouth disease (HFMD) among young children, with significant mortality. Effective vaccines against HFMD are urgently required. Several EV71 virus-like particle (VLP) vaccine candidates were found to be protective in the neonatal mouse EV71 challenge model. However, to what extent the VLP vaccine protects susceptible organs against EV71 infection in vivo has remained elusive. In the present study, the comprehensive immunogenicity of a potential EV71 vaccine candidate based on VLPs was evaluated in a neonatal mouse model. Despite lower levels of neutralizing antibodies to EV71 in the sera of VLP-immunized mice compared with those in mice vaccinated with inactivated EV71, the VLP-based vaccine was shown to be able to induce immunoglobulin (Ig)G and IgA memory-associated cellular immune responses to EV71. Of note, the EV71 VLP vaccine candidate was capable of inhibiting viral proliferation in cardiac muscle, skeletal muscle, lung and intestine of immunized mice and provided effective protection against the pathological damage caused by viral attack. In particular, the VLP vaccine was able to inhibit the transportation of EV71 from the central nervous system to the muscle tissue and greatly protected muscle tissue from infection, along with recovery from the viral infection. This led to nearly 100% immunoprotective efficacy, enabling neonatal mice delivered by VLP-immunized female adult mice to survive and grow with good health. The present study provided valuable additional knowledge of the specific protective efficacy of the EV71 VLP vaccine in vivo, which also indicated that it is a promising potential candidate for being developed into an EV71 vaccine.
-
DEFF Research Database (Denmark)
Dankowski, S. U.; Streb, D.; Ruff, M.
1996-01-01
coefficients at the band gap are twice as high as for high temperature grown materials. By annealing the samples, we obtained a drastic reduced absorption coefficient below as well as above the band gap. We observed absorption changes up to 17 000 cm(-1) for LT-GaAs and 9000 cm(-1) for LT-AlGaAs taking place......Room temperature absorption spectra of low temperature molecular beam epitaxy grown GaAs (LT-GaAs) and AlGaAs (LT-AlGaAs) are reported. We performed measurements in an extended spectral range from 0.8 eV to photon energies of 2.8 eV far above the band gap. For as-grown LT-materials, the absorption...
-
Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars
2018-01-01
The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.
-
Photo electron emission microscopy of polarity-patterned materials
International Nuclear Information System (INIS)
Yang, W-C; Rodriguez, B J; Gruverman, A; Nemanich, R J
2005-01-01
This study presents variable photon energy photo electron emission microscopy (PEEM) of polarity-patterned epitaxial GaN films, and ferroelectric LiNbO 3 (LNO) single crystals and PbZrTiO 3 (PZT) thin films. The photo electrons were excited with spontaneous emission from the tunable UV free electron laser (FEL) at Duke University. We report PEEM observation of polarity contrast and measurement of the photothreshold of each polar region of the materials. For a cleaned GaN film with laterally patterned Ga- and N-face polarities, we found a higher photoelectric yield from the N-face regions compared with the Ga-face regions. Through the photon energy dependent contrast in the PEEM images of the surfaces, we can deduce that the threshold of the N-face region is less than ∼4.9 eV while that of the Ga-face regions is greater than 6.3 eV. In both LNO and PZT, bright emission was detected from the negatively poled domains, indicating that the emission threshold of the negative domain is lower than that of the positive domain. For LNO, the measured photothreshold was ∼4.6 eV at the negative domain and ∼6.2 eV at the positive domain, while for PZT, the threshold of the negative domain was less than 4.3 eV. Moreover, PEEM observation of the PZT surface at elevated temperatures displayed that the domain contrast disappeared near the Curie temperature of ∼300 deg. C. The PEEM polarity contrast of the polar materials is discussed in terms of internal screening from free carriers and defects and the external screening due to adsorbed ions
-
Photo electron emission microscopy of polarity-patterned materials
Yang, W.-C.; Rodriguez, B. J.; Gruverman, A.; Nemanich, R. J.
2005-04-01
This study presents variable photon energy photo electron emission microscopy (PEEM) of polarity-patterned epitaxial GaN films, and ferroelectric LiNbO3 (LNO) single crystals and PbZrTiO3 (PZT) thin films. The photo electrons were excited with spontaneous emission from the tunable UV free electron laser (FEL) at Duke University. We report PEEM observation of polarity contrast and measurement of the photothreshold of each polar region of the materials. For a cleaned GaN film with laterally patterned Ga- and N-face polarities, we found a higher photoelectric yield from the N-face regions compared with the Ga-face regions. Through the photon energy dependent contrast in the PEEM images of the surfaces, we can deduce that the threshold of the N-face region is less than ~4.9 eV while that of the Ga-face regions is greater than 6.3 eV. In both LNO and PZT, bright emission was detected from the negatively poled domains, indicating that the emission threshold of the negative domain is lower than that of the positive domain. For LNO, the measured photothreshold was ~4.6 eV at the negative domain and ~6.2 eV at the positive domain, while for PZT, the threshold of the negative domain was less than 4.3 eV. Moreover, PEEM observation of the PZT surface at elevated temperatures displayed that the domain contrast disappeared near the Curie temperature of ~300 °C. The PEEM polarity contrast of the polar materials is discussed in terms of internal screening from free carriers and defects and the external screening due to adsorbed ions.
-
Li, Yan; Xu, Xiaoming; Li, Yanzhang; Ding, Cong; Wu, Jing; Lu, Anhuai; Ding, Hongrui; Qin, Shan; Wang, Changqiu
2018-05-01
Rutile is the most common and stable form of TiO2 that ubiquitously existing on Earth and other terrestrial planets like Mars. Semiconducting mineral such as rutile-based photoredox reactions have been considered to play important roles in geological times. However, due to the inherent complexity in chemistry, the precision determination on band structure of natural rutile and the theoretical explanation on its solar-driven photochemistry have been hardly seen yet. Considering the multiple minor and trace elements in natural rutile, we firstly obtained the single-crystal crystallography, mineralogical composition and defects characteristic of the rutile sample by using both powder and single crystal X-ray diffraction, electron microprobe analysis and X-ray photoelectron spectroscopy. Then, the band gap was accurately determined by synchrotron-based O K-edge X-ray absorption and emission spectra, which was firstly applied to natural rutile due to its robustness on compositions and defects. The absolute band edges of the rutile sample was calculated by considering the electronegativity of the atoms, band gap and point of zero charge. Besides, after detecting the defect energy levels by photoluminescence spectra, we drew the schematic band structure of natural rutile. The band gap (2.7 eV) of natural rutile was narrower than that of synthetic rutile (3.0 eV), and the conduction and valence band edges of natural rutile at pH = pHPZC were determined to be -0.04 V and 2.66 V (vs. NHE), respectively. The defect energy levels located at nearly the middle position of the forbidden band. Further, we used theoretical calculations to verify the isomorphous substitution of Fe and V for Ti gave rise to the distortion of TiO6 octahedron and created vacancy defects in natural rutile. Based on density functional theory, the narrowed band gap was interpreted to the contribution of Fe-3d and V-3d orbits, and the defect energy state was formed by hybridization of O-2p and Fe/V/Ti-3d
-
Ramiro, I.; Villa, J.; Tablero, C.; Antolín, E.; Luque, A.; Martí, A.; Hwang, J.; Phillips, J.; Martin, A. J.; Millunchick, J.
2017-09-01
Quantum-dot (QD) intermediate-band (IB) materials are regarded as promising candidates for high-efficiency photovoltaics. The sequential two-step two-photon absorption processes that take place in these materials have been proposed to develop high-efficiency solar cells and infrared (IR) photodetectors. In this work, we experimentally and theoretically study the interrelation of the absorptivity with transitions of carriers to and from the IB in type-II GaSb/GaAs QD devices. Our devices exhibit three optical band gaps with: EL=0.49 eV ,EH=1.02 eV , and EG=1.52 eV , with the IB located 0.49 eV above the valence band. These values are well supported by semiempirical calculations of the QDs electronic structure. Through intensity-dependent two-photon photocurrent experiments, we are able to vary the filling state of the IB, thus modifying the absorptivity of the transitions to and from this band. By filling the IB with holes via E =1.32 eV or E =1.93 eV monochromatic illumination, we demonstrate an increase in the EL-related absorptivity of more than two orders of magnitude and a decrease in the EH-related absorptivity of one order of magnitude. The antisymmetrical evolution of those absorptivities is quantitatively explained by a photoinduced shift of the quasi-Fermi level of the IB. Furthermore, we report the observation of a two-photon photovoltage, i.e., the contribution of subband gap two-photon absorption to increase the open-circuit voltage of solar cells. We find that the generation of the two-photon photovoltage is related, in general, to the production of a two-photon photocurrent. However, while photons with energy close to EL participate in the production of the two-photon photocurrent, they are not effective in the production of a two-photon photovoltage. We also report the responsivity of GaSb/GaAs QD devices performing as optically triggered photodetectors. These devices exhibit an amplification factor of almost 400 in the IR spectral region. This high
-
Actual preferences for EV households in Denmark and Sweden
DEFF Research Database (Denmark)
Jensen, Anders Fjendbo; Haustein, Sonja; Cherchi, Elisabetta
, as the EV market is still quite immature in most countries, lack of data on EV users is a common problem for researchers. Data on EV purchase and use have thus often been collected by means of data from intentional statements (see e.g. Bühler et al. 2014), stated preferences (see e.g. Bunch et al. 1993......; Hidrue et al. 2011; Jensen et al. 2014) and EV vehicle trials (Golob & Gould 1998; Franke & Krems 2013; Jensen et al. 2014). While such studies have provided important insight into various areas of the EV market, the fact that the results are not based on actual behaviour means that they are subject...... to a high degree of uncertainty. Being the global EV market forerunner, Norway has a better foundation for studying the EV market based on actual EV owners. On these grounds, Klöckner et al. (2013), studied differences in car use between EV and conventional vehicle (CV) users. Also in Norway, Mersky et al...
-
Preliminary soft x-ray studies of beta-SiC
Energy Technology Data Exchange (ETDEWEB)
Shek, M.L. [Brookhaven National Lab., Upton, NY (United States); Miyano, K.E.; Ederer, D.L. [Tulane Univ., New Orleans, LA (United States). Dept. of Physics; Dong, Q.Y.; Callcott, T.A. [Tennessee Univ., Knoxville, TN (United States). Dept. of Physics
1994-06-01
We have looked at beta-SiC with soft x-ray emission and photoemission spectroscopy. From the Si L{sub 23} and C K emissions, the Si s+d-like and C p partial density of states in the bulk valence band are identified, and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3 {times} 2) Si-rich surface shows two surface-derived valence features at {approximately}{minus}2.6 and {approximately}{minus}1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2p core level components shifted by {minus}0.5 eV and {minus}1.4 eV from the bulk-like SiC Si 2p core level. We have also used the Si L{sub 23} absorption edge as a probe of the unfilled states near the conduction, band minimum.
-
Li, Zhen; Huang, Fei; Feng, Xin; Yan, Aihua; Dong, Haiming; Hu, Miao; Li, Qi
2018-06-01
A two-phase-coexistence technique offers intriguing variables to maneuver novel and enhanced functionality in a single-component material. Most importantly, new band alignment and perfect interfaces between two phases can strongly affect local photoelectronic properties. However, previous efforts to achieve two-phase coexistence were mainly restricted to specific systems and methods. Here we demonstrate a phase-transition route to acquire two-phase-coexistence niobium oxyfluoride (Nb3O7F) nanocrystals for the first time. Based on key distinguishing features of the experimental results and theoretical analysis, the phase transition of Nb3O7F involves an organic/inorganic hybrid, heat treating, Al-doping, lattice deformation and structural rearrangement. The band gap can be effectively tuned from 3.03 eV to 2.84 eV, and the VBM can be tuned from 1.49 eV to 1.69 eV according to the phase proportion. Benefiting from uniform nanocrystal size, tunable band alignment and an optimized interfacial structure, the two-phase coexistence markedly enhances visible-light harvesting and the photocatalytic performance of Nb3O7F nanocrystals. The results not only demonstrate an opportunity to explore two-phase coexistence of novel nanocrystals, but also illustrate the role of two-phase coexistence in achieving enhanced photoelectronic properties.
-
VUV action spectroscopy of protonated leucine-enkephalin peptide in the 6-14 eV range
Energy Technology Data Exchange (ETDEWEB)
Ranković, M. Lj. [Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Canon, F. [INRA, UMR1324 Centre des Sciences du Goût et de l’Alimentation, F-21000 Dijon (France); Nahon, L. [SOLEIL, l’Orme des Merisiers, St Aubin, BP48, 91192 Gif sur Yvette Cedex (France); Giuliani, A. [SOLEIL, l’Orme des Merisiers, St Aubin, BP48, 91192 Gif sur Yvette Cedex (France); INRA, UAR1008, CEPIA, Rue de la Géraudière, BP 71627, 44316 Nantes (France); Milosavljević, A. R., E-mail: vraz@ipb.ac.rs [Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
2015-12-28
We have studied the Vacuum Ultraviolet (VUV) photodissociation of gas-phase protonated leucine-enkephalin peptide ion in the 5.7 to 14 eV photon energy range by coupling a linear quadrupole ion trap with a synchrotron radiation source. We report VUV activation tandem mass spectra at 6.7, 8.4, and 12.8 eV photon energies and photodissociation yields for a number of selected fragments. The obtained results provide insight into both near VUV radiation damage and electronic properties of a model peptide. We could distinguish several absorption bands and assign them to particular electronic transitions, according to previous theoretical studies. The photodissociation yields appear to be very different for the various observed fragmentation channels, depending on both the types of fragments and their position along the peptide backbone. The present results are discussed in light of recent gas-phase spectroscopic data on peptides.
-
International Nuclear Information System (INIS)
Ogorodnikov, I.N.; Pustovarov, V.A.; Omelkov, S.I.; Isaenko, L.I.; Yelisseyev, A.P.; Goloshumova, A.A.; Lobanov, S.I.
2014-01-01
The electronic properties of single crystals of SrMgF 4 have been determined using low-temperature (10–293 K) time-resolved vacuum ultraviolet synchrotron radiation spectroscopy, far ultraviolet (3.7–36 eV) reflectance spectra and calculations for the spectra of optical functions. The bandgap of investigated compound was found at E g =12.55eV, the energy threshold for creation of the unrelaxed excitons at E n=1 =11.37eV, and the low-energy fundamental absorption edge at 10.3 eV. Two groups of photoluminescence (PL) bands have been identified: the exciton-type emissions at 2.6–3.3 and 3.3–4.2 eV and defect-related emissions at 1.8–2.6 and 4.2–5.5 eV. It was shown that PL excitation (PLE) for the exciton-type emission bands occurs mainly at the low-energy tail of the fundamental absorption of the crystal with a maximum at 10.7 eV. At excitation energies above E g the energy transfer from the host lattice to the PL emission centers is inefficient. The paper discusses the origin of the excitonic-type PLE spectra taking into account the results of modeling the PLE spectra shape in the framework of a simple diffusion theory and surface energy losses. -- Highlights: • Far-ultraviolet reflection spectra of SrMgF 4 were studied. • Photoluminescence (PL) emission and PL excitation spectra were studied. • Optical function spectra were calculated on the basis of experimental data. • Electronic structure properties of undoped SrMgF 4 crystals were determined
-
A Small Fullerene (C{sub 24}) may be the Carrier of the 11.2 μ m Unidentified Infrared Band
Energy Technology Data Exchange (ETDEWEB)
Bernstein, L. S.; Shroll, R. M. [Spectral Sciences, Inc., 4 Fourth Ave., Burlington, MA 01803 (United States); Lynch, D. K. [Thule Scientific, P.O. Box 953, Topanga, CA 90290 (United States); Clark, F. O., E-mail: larry@spectral.com, E-mail: rshroll@spectral.com, E-mail: dave@caltech.edu, E-mail: frank.clark@gmail.com [Wopeco Research, 125 South Great Road, Lincoln, MA 01773 (United States)
2017-02-20
We analyze the spectrum of the 11.2 μ m unidentified infrared band (UIR) from NGC 7027 and identify a small fullerene (C{sub 24}) as a plausible carrier. The blurring effects of lifetime and vibrational anharmonicity broadening obscure the narrower, intrinsic spectral profiles of the UIR band carriers. We use a spectral deconvolution algorithm to remove the blurring, in order to retrieve the intrinsic profile of the UIR band. The shape of the intrinsic profile—a sharp blue peak and an extended red tail—suggests that the UIR band originates from a molecular vibration–rotation band with a blue band head. The fractional area of the band-head feature indicates a spheroidal molecule, implying a nonpolar molecule and precluding rotational emission. Its rotational temperature should be well approximated by that measured for nonpolar molecular hydrogen, ∼825 K for NGC 7027. Using this temperature, and the inferred spherical symmetry, we perform a spectral fit to the intrinsic profile, which results in a rotational constant implying C{sub 24} as the carrier. We show that the spectroscopic parameters derived for NGC 7027 are consistent with the 11.2 μ m UIR bands observed for other objects. We present density functional theory (DFT) calculations for the frequencies and infrared intensities of C{sub 24}. The DFT results are used to predict a spectral energy distribution (SED) originating from absorption of a 5 eV photon, and characterized by an effective vibrational temperature of 930 K. The C{sub 24} SED is consistent with the entire UIR spectrum and is the dominant contributor to the 11.2 and 12.7 μ m bands.
-
Luminescent Properties of Surface Functionalized BaTiO₃ Embedded in Poly(methyl methacrylate).
Requena, Sebastian; Lacoul, Srijan; Strzhemechny, Yuri M
2014-01-16
As-received BaTiO₃ nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyl)triethoxysilane (APTES) and mixed with poly(methyl methacrylate)/toluene solution. The nanocomposite solution was spin coated on Si substrates to form thin films. The photoluminescence spectrum of the pure powder was composed of a bandgap emission at 3.0 eV and multiple bands centered about 2.5 eV. Surface functionalization of the BaTiO₃ powder via APTES increases overall luminescence at room temperature while only enhancing bandgap emission at low-temperature. Polymer coating of the functionalized nanoparticles significantly enhances bandgap emissions while decreasing emissions associated with near-surface lattice distortions at 2.5 eV.
-
Thermoluminescence of KI:Eu2+ Stimulated by Ultraviolet Irradiation at Different Temperatures
International Nuclear Information System (INIS)
Aguirre de Carcer, I.; Jaque, F.; Townsend, P.D.
1999-01-01
The thermoluminescence (TL) of KI:Eu 2+ after ultraviolet (254 nm) irradiation at different temperatures from -40 deg. C to +40 deg. C has been studied. Two main glow peaks and some minor features have been identified on the thermoluminescence glow curves. Irradiating at low temperature gives a strong peak at γ5 deg. C and a less pronounced one at 230 deg. C. The TL glow peak emission spectra were analysed as consisting of the addition of several Gaussian shaped emission bands. The position of the Gaussian peaks, and their widths, are coincident with divalent europium emission at different sites of the KI:Eu 2+ system. A new emission band centred at 3.05 eV, 0.16 eV FWHM for Eu 2+ has been observed from the TL emission spectra. The changes in the spectral distribution of the TL emission with irradiation temperature are discussed. (author)
-
Thermoluminescence of KCl:Eu2+ under ultraviolet irradiation at different temperatures
International Nuclear Information System (INIS)
Aguirre de Carcer, I.; Jaque, F.; Rowlands, A.P.; Townsend, P.D.
1998-01-01
The thermoluminescence of KCl:Eu 2+ ultraviolet irradiated samples has been studied at different temperatures with the aim of optimising its solar dosimetric characteristics. This was achieved by recording with a dosimeter -10 deg. C. Ultraviolet light (254 nm) irradiation under these conditions produces a high TL peak at 90 deg. C which is linear with exposure time over at least four orders of magnitude. The TL emission spectra of KCl:Eu 2+ under UV irradiation have been analysed to reveal component bands at 2.86 eV, 2.97 eV, 3.02 eV, 3.07 eV, 3.14 eV and 3.26 eV that corresponds to divalent europium impurity sites. The new peak at 3.26 eV (297 nm) had not reported before but it has to be considered in order to match the experimental TL emission. A model for the defect site of this new emission is discussed
-
Shi, Guangsha; Kioupakis, Emmanouil
2018-02-01
We apply density functional and many-body perturbation theory calculations to consistently determine and parameterize the relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn, and predict the Seebeck coefficient as a function of doping and temperature. The quasiparticle band gaps, including spin-orbit coupling effects, are determined to be 0.728 eV, 0.555 eV, and 0.142 eV for Mg2Si, Mg2Ge, and Mg2Sn, respectively. The inclusion of the semicore electrons of Mg, Ge, and Sn in the valence is found to be important for the accurate determination of the band gaps of Mg2Ge and Mg2Sn. We also developed a Luttinger-Kohn Hamiltonian and determined a set of band parameters to model the near-edge relativistic quasiparticle band structure consistently for all three compounds that can be applied for thermoelectric device simulations. Our calculated values for the Seebeck coefficient of all three compounds are in good agreement with the available experimental data for a broad range of temperatures and carrier concentrations. Our results indicate that quasiparticle corrections are necessary for the accurate determination of Seebeck coefficients at high temperatures at which bipolar transport becomes important.
-
International Nuclear Information System (INIS)
Ueno, N.; Sugita, K.; Seki, K.; Inokuchi, H.
1986-01-01
This paper describes the results of low-energy electron transmission and secondary-electron emission experiments on thin films of long-chain alkanes deposited on metal substrates. The spectral changes due to crystal-melt phase transition were measured in situ in both experiments. The ground-state energy V 0 of the quasifree electron in crystalline state was determined to be 0.5 +- 0.1 eV. The value of V 0 for the molten state was found to be negative. Further, in the crystalline state evidence is found for a direct correspondence between the transmission maxima and the high value of the density of states in the conduction bands
-
Uchida, Takayuki; Jinno, Riena; Takemoto, Shu; Kaneko, Kentaro; Fujita, Shizuo
2018-04-01
The band alignment at an α-Ga2O3/α-(Al x Ga1‑ x )2O3 heterointerface, with different Al compositions (x), grown on a c-plane sapphire substrate was evaluated by X-ray photoelectron spectroscopy. The experimental results show that the heterointerface has the type-I band discontinuity with the valence band offsets of 0.090, 0.12, and 0.14 eV, and the conduction band offsets of 0.34, 0.79, and 1.87 eV, for x values of 0.1, 0.4, and 0.8, respectively. The small band offset for the valence band is attributed to the fact that the valence band of oxides is constituted by the localized O 2p level, which is dominated by the nature of oxygen atoms. The type-I band discontinuity is desirable for a variety of heterostructure devices.
-
Directory of Open Access Journals (Sweden)
Hung-Bo Hsiao
2014-01-01
Full Text Available Enterovirus71 (EV71 is now recognized as an emerging neurotropic virus in Asia and one major causative agent of hand-foot-mouth diseases (HFMD. However potential animal models for vaccine development are limited to young mice. In this study, we used an adeno-associated virus (AAV vector to introduce the human EV71 receptors P-selectin glycoprotein ligand-1 (hPSGL1 or a scavenger receptor class-B member-2 (hSCARB2 into adult ICR mice to change their susceptibility to EV71 infection. Mice were administered AAV-hSCARB2 or AAV-hPSGL1 through intravenous and oral routes. After three weeks, expression of human SCARB2 and PSGL1 was detected in various organs. After infection with EV71, we found that the EV71 viral load in AAV-hSCARB2- or AAV-hPSGL1-transduced mice was higher than that of the control mice in both the brain and intestines. The presence of EV71 viral particles in tissues was confirmed using immunohistochemistry analysis. Moreover, inflammatory cytokines were induced in the brain and intestines of AAV-hSCARB2- or AAV-hPSGL1-transduced mice after EV71 infection but not in wild-type mice. However, neurological disease was not observed in these animals. Taken together, we successfully infected adult mice with live EV71 and induced local inflammation using an AAV delivery system.
-
Electronic transport properties of Ti-impurity band in Si
Energy Technology Data Exchange (ETDEWEB)
Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I [Departamento de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias, Fisicas, Universidad Complutense, E-28040 Madrid (Spain)
2009-04-21
In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.
-
Electronic transport properties of Ti-impurity band in Si
International Nuclear Information System (INIS)
Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I
2009-01-01
In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.
-
Yang, Dan-Dan; Li, Wei; Xiong, Wei-Wei; Li, Jian-Rong; Huang, Xiao-Ying
2018-05-01
The preparation of crystalline molecularly supertetrahedral Tn clusters with variable sizes and components is of vital importance for the fundamental study of their physicochemical properties. However, setting up an efficient method to stabilize large discrete Tn clusters is a challenge due to their high negative charges and polymerization nature. In this work, we report on the ionothermal synthesis of three discrete T4 cluster compounds, namely [Bmmim]5[(CH3)2NH2]4[NH4][M4In16S31(SH)4]·6H2O (M = Mn (1), Zn (2), Cd (3), Bmmim = 1-buty-2,3-dimethyl-imidazolium), and four discrete T5 cluster compounds, namely [Bmmim]10[NH4]3[Cu5Ga30-xInxS52(SH)4] (x = 6.6 (5), 14.5 (6), 23.8 (7), and 30 (8)). The compound [Bmmim]10[NH4]3[Cu5Ga30S52(SH)4] (4) previously reported by us features a discrete T5 cluster. The steep UV-Vis absorption edges indicate band gaps of 2.20 eV for 1, 2.64 eV for 2, 2.69 eV for 3, 3.04 eV for 4, 2.65 eV for 5, 2.48 eV for 6, 2.32 eV for 7, and 2.30 eV for 8. The compositions of T5 clusters could be varied with the ratios of Ga : In in the starting reagents, providing an opportunity to systematically control the band gaps and fluorescence performances of T5 cluster-based compounds. This research might advance the understanding of the ionothermal preparation and functionality tuning of crystalline chalcogenides.
-
International Nuclear Information System (INIS)
Abdel Rafea, M; Roushdy, N
2009-01-01
Amorphous copper oxide films were deposited using the SILAR technique. Both Cu 2 O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu 2 O is the most probable crystalline phase in the film, while Cu 2 O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu 2 O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.
-
An EV Charging Scheduling Mechanism Based on Price Negotiation
Directory of Open Access Journals (Sweden)
Baocheng Wang
2018-05-01
Full Text Available Scheduling EV user’s charging behavior based on charging price and applying renewable energy resources are the effective methods to release the load pressure of power grids brought about by the large-scale popularity of electric vehicles (EVs. This paper presents a novel approach for EV charging scheduling based on price negotiation. Firstly, the EV charging system framework based on price negotiation and renewable energy resources is discussed. Secondly, the price negotiation model is presented, including the initial price models and the conditions of transactions. Finally, an EV charging scheduling mechanism based on price negotiation (CSM-PN, including the price adjustment strategies of both the operator and EV users is proposed to seek a final transaction during multi-round price negotiation. Simulation results show that this novel approach can effectively improve the charging station operator’s income, reduce the EV users’ costs, and balance the load of the power grid while improving the efficiency of the EV charging system.
-
Directory of Open Access Journals (Sweden)
Chee Wah Tan
Full Text Available Enterovirus 71 (EV-71 is the main causative agent of hand, foot and mouth disease (HFMD. In recent years, EV-71 infections were reported to cause high fatalities and severe neurological complications in Asia. Currently, no effective antiviral or vaccine is available to treat or prevent EV-71 infection. In this study, we have discovered a synthetic peptide which could be developed as a potential antiviral for inhibition of EV-71. Ninety five synthetic peptides (15-mers overlapping the entire EV-71 capsid protein, VP1, were chemically synthesized and tested for antiviral properties against EV-71 in human Rhabdomyosarcoma (RD cells. One peptide, SP40, was found to significantly reduce cytopathic effects of all representative EV-71 strains from genotypes A, B and C tested, with IC(50 values ranging from 6-9.3 µM in RD cells. The in vitro inhibitory effect of SP40 exhibited a dose dependent concentration corresponding to a decrease in infectious viral particles, total viral RNA and the levels of VP1 protein. The antiviral activity of SP40 peptide was not restricted to a specific cell line as inhibition of EV-71 was observed in RD, HeLa, HT-29 and Vero cells. Besides inhibition of EV-71, it also had antiviral activities against CV-A16 and poliovirus type 1 in cell culture. Mechanism of action studies suggested that the SP40 peptide was not virucidal but was able to block viral attachment to the RD cells. Substitutions of arginine and lysine residues with alanine in the SP40 peptide at positions R3A, R4A, K5A and R13A were found to significantly decrease antiviral activities, implying the importance of positively charged amino acids for the antiviral activities. The data demonstrated the potential and feasibility of SP40 as a broad spectrum antiviral agent against EV-71.
-
Yamada, Takumi; Aharen, Tomoko; Kanemitsu, Yoshihiko
2018-02-01
The determination of the band gap and exciton energies of lead halide perovskites is very important from the viewpoint of fundamental physics and photonic device applications. By using photoluminescence excitation (PLE) spectra, we reveal the optical properties of CH3NH3PbCl3 single crystals in the near-band-edge energy regime. The one-photon PLE spectrum exhibits the 1 s exciton peak at 3.11 eV. On the contrary, the two-photon PLE spectrum exhibits no peak structure. This indicates photon recycling of excitonic luminescence. By analyzing the spatial distribution of the excitons and photon recycling, we obtain 3.15 eV for the band gap energy and 41 meV for the exciton binding energy.
-
Based on graphene tunable dual-band terahertz metamaterial absorber with wide-angle
Huang, Mulin; Cheng, Yongzhi; Cheng, Zhengze; Chen, Haoran; Mao, Xuesong; Gong, Rongzhou
2018-05-01
We present a wide-angle tunable dual-band terahertz (THz) metamaterial absorber (MMA) based on square graphene patch (SGP). This MMA is a simple periodic array, consisting of a dielectric substrate sandwiched with the SGP and a continuous metallic film. The designed MMA can achieve dual-band absorption by exciting fundamental and second higher-order resonance modes on SGP. The numerical simulations indicate that the absorption spectrum of the designed MMA is tuned from 0.85 THz to 1.01 THz, and from 2.84 THz to 3.37 THz when the chemical potential of the SGP is increasing from 0.4eV to 0.8eV. Moreover, it operates well in a wide-angle of the incident waves. The presented THz MMA based on the SGP could find some potential applications in optoelectronic related devices, such as sensor, emitter and wavelength selective radiators.
-
Band structure of hydrogenated Si nanosheets and nanotubes
International Nuclear Information System (INIS)
Guzman-Verri, G G; Lew Yan Voon, L C
2011-01-01
The band structures of fully hydrogenated Si nanosheets and nanotubes are elucidated by the use of an empirical tight-binding model. The hydrogenated Si sheet is a semiconductor with an indirect band gap of about 2.2 eV. The symmetries of the wavefunctions allow us to explain the origin of the gap. We predict that, for certain chiralities, hydrogenated Si nanotubes represent a new type of semiconductor, one with coexisting direct and indirect gaps of exactly the same magnitude. This behavior is different from that governed by the Hamada rule established for non-hydrogenated carbon and silicon nanotubes. A comparison to the results of an ab initio calculation is made.
-
Study of sub band gap absorption of Sn doped CdSe thin films
International Nuclear Information System (INIS)
Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.
2014-01-01
The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively
-
Study of sub band gap absorption of Sn doped CdSe thin films
Energy Technology Data Exchange (ETDEWEB)
Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)
2014-04-24
The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.
-
Booker, Edward P; Thomas, Tudor H; Quarti, Claudio; Stanton, Michael R; Dashwood, Cameron D; Gillett, Alexander J; Richter, Johannes M; Pearson, Andrew J; Davis, Nathaniel J L K; Sirringhaus, Henning; Price, Michael B; Greenham, Neil C; Beljonne, David; Dutton, Siân E; Deschler, Felix
2017-12-27
We investigate the origin of the broadband visible emission in layered hybrid lead-halide perovskites and its connection with structural and photophysical properties. We study ⟨001⟩ oriented thin films of hexylammonium (HA) lead iodide, (C 6 H 16 N) 2 PbI 4 , and dodecylammonium (DA) lead iodide, (C 12 H 28 N) 2 PbI 4 , by combining first-principles simulations with time-resolved photoluminescence, steady-state absorption and X-ray diffraction measurements on cooling from 300 to 4 K. Ultrafast transient absorption and photoluminescence measurements are used to track the formation and recombination of emissive states. In addition to the excitonic photoluminescence near the absorption edge, we find a red-shifted, broadband (full-width at half-maximum of about 0.4 eV), emission band below 200 K, similar to emission from ⟨110⟩ oriented bromide 2D perovskites at room temperature. The lifetime of this sub-band-gap emission exceeds that of the excitonic transition by orders of magnitude. We use X-ray diffraction measurements to study the changes in crystal lattice with temperature. We report changes in the octahedral tilt and lattice spacing in both materials, together with a phase change around 200 K in DA 2 PbI 4 . DFT simulations of the HA 2 PbI 4 crystal structure indicate that the low-energy emission is due to interstitial iodide and related Frenkel defects. Our results demonstrate that white-light emission is not limited to ⟨110⟩ oriented bromide 2D perovskites but a general property of this class of system, and highlight the importance of defect control for the formation of low-energy emissive sites, which can provide a pathway to design tailored white-light emitters.
-
Energy Technology Data Exchange (ETDEWEB)
Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng [School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States); Li Xiaomin; Gan Xiaoyan [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Sellers, Ian R. [Deparment of Physics, University of Oklahoma, Norman, Oklahoma 73019 (United States)
2012-12-24
A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.
-
Wang, Zhipeng; Xiong, Xiaoxiong
2017-01-01
The MODIS instruments aboard Terra and Aqua satellites are radiometrically calibrated on-orbit with a set of onboard calibrators (OBC) including a solar diffuser (SD), a blackbody (BB) and a space view (SV) port through which the detectors can view the dark space. As a whisk-broom scanning spectroradiometer, thirty-six MODIS spectral bands are assembled in the along-scan direction on four focal plane assemblies (FPA). These bands capture images of the same target sequentially with the motion of a scan mirror. Then the images are co-registered on board by delaying appropriate band dependent amount of time depending on the band locations on the FPA. While this co-registration mechanism is functioning well for the "far field" remote targets such as Earth view (EV) scenes or the Moon, noticeable band-to-band misregistration in the along-scan direction has been observed for near field targets, in particular the OBCs. In this paper, the misregistration phenomenon is presented and analyzed. It is concluded that the root cause of the misregistration is that the rotating element of the instrument, the scan mirror, is displaced from the focus of the telescope primary mirror. The amount of the misregistration is proportional to the band location on the FPA and is inversely proportional to the distance between the target and the scan mirror. The impact of this misregistration to the calibration of MODIS bands is discussed. In particular, the calculation of the detector gain coefficient m1 of bands 8-16 (412 nm 870 nm) is improved by up to 1.5% for Aqua MODIS.
-
Influence of defects on the absorption edge of InN thin films: The band gap value
Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.
2007-07-01
We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.
-
Tunable band structures of polycrystalline graphene by external and mismatch strains
Institute of Scientific and Technical Information of China (English)
Jiang-Tao Wu; Xing-Hua Shi; Yu-Jie Wei
2012-01-01
Lacking a band gap largely limits the application of graphene in electronic devices.Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene.Here,we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations.We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain.However,some particular asymmetrical GBs can open a band gap in graphene and their band structures can be substantially tuned by external strains.A maximum band gap about 0.19 eV was observed in matched-armchair GB (5,5) | (3,7) with a misorientation of θ =13° when the applied uniaxial strain increases to 9％.Although mismatch strain is inevitable in asymmetrical GBs,it has a small influence on the band gap of polycrystalline graphene.
-
Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin
2015-06-23
A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.
-
Torchynska, T.; Khomenkova, L.; Slaoui, A.
2018-04-01
Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-enhanced chemical vapor deposition. The Si content was varied by changing the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Conventional furnace annealing at 1100°C for 30 min was applied to produce the Si quantum dots (QDs) in the SiN x films. Spectroscopic ellipsometry was used to determine the refractive index of the SiN x films that allowed estimating the film's stoichiometry. Fourier transform infrared spectroscopy has been also used to confirm the stoichiometry and microstructure. Photoluminescence (PL) spectra of Si-rich SiN x films are complex. A non-monotonous variation of the different PL peaks versus Si excess contents testifies to the competition of different radiative channels. The analysis of PL spectra, measured at the different excitation light energies and variable temperatures, has revealed that the PL bands with the peaks within the range 2.1-3.0 eV are related to the carrier recombination via radiative native defects in the SiN x host. Simultaneously, the PL bands with the peaks at 1.5-2.0 eV are caused by the exciton recombination in the Si QDs of different sizes. The way to control the SiN x emission is discussed.
-
Liang, Xiao-Xuan; Freidank, Sebastian; Linz, Norbert; Paltauf, Günther; Zhang, Zhenxi; Vogel, Alfred
2017-03-01
We developed modeling tools for optical breakdown events in water that span various phases reaching from breakdown initiation via solvated electron generation, through laser induced-plasma formation and temperature evolution in the focal spot to the later phases of cavitation bubble dynamics and shock wave emission and applied them to a large parameter space of pulse durations, wavelengths, and pulse energies. The rate equation model considers the interplay of linear absorption, photoionization, avalanche ionization and recombination, traces thermalization and temperature evolution during the laser pulse, and portrays the role of thermal ionization that becomes relevant for T > 3000 K. Modeling of free-electron generation includes recent insights on breakdown initiation in water via multiphoton excitation of valence band electrons into a solvated state at Eini = 6.6 eV followed by up-conversion into the conduction band level that is located at 9.5 eV. The ability of tracing the temperature evolution enabled us to link the model of laser-induced plasma formation with a hydrodynamic model of plasma-induced pressure evolution and phase transitions that, in turn, traces bubble generation and dynamics as well as shock wave emission. This way, the amount of nonlinear energy deposition in transparent dielectrics and the resulting material modifications can be assessed as a function of incident laser energy. The unified model of plasma formation and bubble dynamics yields an excellent agreement with experimental results over the entire range of investigated pulse durations (femtosecond to nanosecond), wavelengths (UV to IR) and pulse energies.
-
International Nuclear Information System (INIS)
Iwase, Makoto; Ohkubo, Kunizo; Kubo, Shin; Idei, Hiroshi.
1996-05-01
For the measurement of electron cyclotron emission from the high temperature plasma, a band rejection filter in the range of 40-60 GHz is designed to reject the 53.2 GHz signal with large amplitude from the gyrotron for the purpose of plasma electron heating. The filter developed with ten sets of three quarters-wavelength coupled by TE 111 mode of tunable resonant cavity has rejection of 50 dB and 3 dB bandwidth of 500 MHz. The modified model of Tschebysheff type for the prediction of rejection is proposed. It is confirmed that the measured rejection as a function of frequency agrees well with the experimental results for small coupling hole, and also clarified that the rejection ratio increases for the large coupling hole. (author)
-
Energy use, cost and CO2 emissions of electric cars
van Vliet, O.; Brouwer, A.S.; Kuramochi, T.; van den Broek, M.A.; Faaij, A.P.C.
2010-01-01
We examine efficiency, costs and greenhouse gas emissions of current and future electric cars (EV), including the impact from charging EV on electricity demand and infrastructure for generation and distribution. Uncoordinated charging would increase national peak load by 7% at 30% penetration rate
-
International Nuclear Information System (INIS)
Duda, A.; Murray, C.S.
1998-01-01
Recent progress in the development of high-performance, 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 thermophotovoltaic (TPV) converters and monolithically interconnected modules (MIMs) is described. The converter structure design is based on using a lattice-matched InAs0.32P0.68/Ga0.32In0.68As/InAs0.32P0.68 double-heterostructure (DH) device, which is grown lattice-mismatched on an InP substrate, with an intervening compositionally step-graded region of InAsyP1-y. The Ga0.32In0.68As alloy has a room-temperature band gap of 0.6 eV and contains a p/n junction. The InAs0.32P0.68 layers have a room-temperature band gap of 0.96 eV and serve as passivation/confinement layers for the Ga0.32In0.68As p/n junction. InAsyP1-y step grades have yielded DH converters with superior electronic quality and performance characteristics. Details of the microstructure of the converters are presented. Converters prepared for this work were grown by atmospheric-pressure metalorganic vapor-phase epitaxy (APMOVPE) and were processed using a combination of photolithography, wet-chemical etching, and conventional metal and insulator deposition techniques. Excellent performance characteristics have been demonstrated for the 0.6-eV TPV converters. Additionally, the implementation of MIM technology in these converters has been highly successful
-
Cathodoluminescence study of anodic nanochannel alumina
Energy Technology Data Exchange (ETDEWEB)
Guo, Q.X. [Department of Electrical and Electronic Engineering, Saga University, Honjo-1, Saga, 840-8502 (Japan)]. E-mail: guoq@cc.saga-u.ac.jp; Hachiya, Y. [Department of Electrical and Electronic Engineering, Saga University, Honjo-1, Saga, 840-8502 (Japan); Tanaka, T. [Department of Electrical and Electronic Engineering, Saga University, Honjo-1, Saga, 840-8502 (Japan); Nishio, M. [Department of Electrical and Electronic Engineering, Saga University, Honjo-1, Saga, 840-8502 (Japan); Ogawa, H. [Department of Electrical and Electronic Engineering, Saga University, Honjo-1, Saga, 840-8502 (Japan)
2006-07-15
Nanochannel alumina (NCA) templates with highly ordered pore arrays were prepared by anodizing pure aluminum foil in acid solutions. Cathodoluminescence measurements reveal that a blue emission band appears at around 2.8 eV and its energy position depends on measurement temperature and pore size of NCA. The shift of the blue emission band energy with temperature is ascribed to the variations of electron-phonon interactions. X-ray absorption near-edge fine structure results show that the blue emission band shift with pore size is due to the local environment change of atoms in NCA.
-
International Nuclear Information System (INIS)
Ward, W.E.; Hersom, C.H.; Tai, C.C.; Gault, W.A.; Shepherd, G.G.; Solheim, B.H.
1994-01-01
Among the emissions viewed by the Wind Imaging Interferometer (WINDII) on the Upper Atmosphere Research Satellite (UARS) are selected lines in the (0-0) transition of the O2 atmospheric band. These lines are viewed simultaneously using a narrow band filter/wide-angle Michelson interferometer combination. The narrow band filter is used to separate the lines on the CCD (spectral-spatial scanning) and the Michelson used to modulate the emissions so that winds and rotational temperatures may be measured from the Doppler shifts and relative intensities of the lines. In this report this technique will be outlined and the on-orbit behavior since launch summarized
-
Relations between broad-band linear polarization and Ca II H and K emission in late-type dwarf stars
Huovelin, Juhani; Saar, Steven H.; Tuominen, Ilkka
1988-01-01
Broadband UBV linear polarization data acquired for a sample of late-type dwarfs are compared with contemporaneous measurements of Ca II H and K line core emission. A weighted average of the largest values of the polarization degree is shown to be the best parameter for chromospheric activity diagnosis. The average maximum polarization in the UV is found to increase from late-F to late-G stars. It is noted that polarization in the U band is considerably more sensitive to activity variations than that in the B or V bands. The results indicate that stellar magnetic fields and the resulting saturation in the Zeeman-sensitive absorption lines are the most probably source of linear polarization in late-type main-sequence stars.
-
Effects of surface condition on the work function and valence-band position of ZnSnN2
Shing, Amanda M.; Tolstova, Yulia; Lewis, Nathan S.; Atwater, Harry A.
2017-12-01
ZnSnN2 is an emerging wide band gap earth-abundant semiconductor with potential applications in photonic devices such as solar cells, LEDs, and optical sensors. We report the characterization by ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy of reactively radio-frequency sputtered II-IV-nitride ZnSnN2 thin films. For samples transferred in high vacuum, the ZnSnN2 surface work function was 4.0 ± 0.1 eV below the vacuum level, with a valence-band onset of 1.2 ± 0.1 eV below the Fermi level. The resulting band diagram indicates that the degenerate bulk Fermi level position in ZnSnN2 shifts to mid-gap at the surface due to band bending that results from equilibration with delocalized surface states within the gap. Brief (< 10 s) exposures to air, a nitrogen-plasma treatment, or argon-ion sputtering caused significant chemical changes at the surface, both in surface composition and interfacial energetics. The relative band positioning of the n-type semiconductor against standard redox potentials indicated that ZnSnN2 has an appropriate energy band alignment for use as a photoanode to effect the oxygen-evolution reaction.
-
Band anticrossing effects in highly mismatched semiconductor alloys
Energy Technology Data Exchange (ETDEWEB)
Wu, Junqiao [Univ. of California, Berkeley, CA (United States)
2002-01-01
The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs1-xNx and GaP1-xNx with x ~< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also
-
International Nuclear Information System (INIS)
Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.
2010-01-01
Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)
-
UV photon and low-energy (5--150 eV) electron-stimulated processes at environmental interfaces
International Nuclear Information System (INIS)
Orlando, T.M.
1997-01-01
Irradiation of surfaces and interfaces with low-energy (5--150 eV) electrons and ultraviolet photons occurs during the storage of ''mixed'' (chemical/radioactive) waste forms and during processing steps which involve the use of low temperature plasmas. It is well known that electron- and photon-stimulated desorption (ESD and PSD) from wide band-gap materials and interfaces can be initiated by Auger decay of deep valence and shallow core holes. This process consists of hole production, Auger decay, reversal of the Madelung potential, and ion expulsion due to the Coulomb repulsion. ESD and PSD of neutrals also occurs and involves production of electron-hole pairs and excitons. Generally, neutral yields dominate ESD and PSD cross sections, which typically vary between ∼10 -16 and 10 -22 cm 2 . The authors present results on the ESD and PSD of environmentally relevant substrates such as ZrO 2 (100), soda-glass, and NaNO 3 . The major cation thresholds and yields indicate that ESD and PSD from these complex materials involves Auger stimulated events. In particular, desorption thresholds correlate with ionization of the O(2s), Zr(4p), Si(2p) and Na(2s) levels. The near band-gap threshold energy (∼5--7 eV) for the desorption of neutrals (i.e., atomic oxygen, NO, etc) demonstrate the overall importance of self-trapped and localized excitons in both ESD and PSD of typical ceramics and oxides
-
Luminescent Properties of Surface Functionalized BaTiO3 Embedded in Poly(methyl methacrylate)
Requena, Sebastian; Lacoul, Srijan; Strzhemechny, Yuri M.
2014-01-01
As-received BaTiO3 nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyl)triethoxysilane (APTES) and mixed with poly(methyl methacrylate)/toluene solution. The nanocomposite solution was spin coated on Si substrates to form thin films. The photoluminescence spectrum of the pure powder was composed of a bandgap emission at 3.0 eV and multiple bands centered about 2.5 eV. Surface functionalization of the BaTiO3 powder via APTES increases overall luminescence at room temperature while only enhancing bandgap emission at low-temperature. Polymer coating of the functionalized nanoparticles significantly enhances bandgap emissions while decreasing emissions associated with near-surface lattice distortions at 2.5 eV. PMID:28788468
-
Luminescent Properties of Surface Functionalized BaTiO3 Embedded in Poly(methyl methacrylate
Directory of Open Access Journals (Sweden)
Sebastian Requena
2014-01-01
Full Text Available As-received BaTiO3 nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyltriethoxysilane (APTES and mixed with poly(methyl methacrylate/toluene solution. The nanocomposite solution was spin coated on Si substrates to form thin films. The photoluminescence spectrum of the pure powder was composed of a bandgap emission at 3.0 eV and multiple bands centered about 2.5 eV. Surface functionalization of the BaTiO3 powder via APTES increases overall luminescence at room temperature while only enhancing bandgap emission at low-temperature. Polymer coating of the functionalized nanoparticles significantly enhances bandgap emissions while decreasing emissions associated with near-surface lattice distortions at 2.5 eV.
-
Measurements of laser generated soft X-ray emission from irradiated gold foils
Energy Technology Data Exchange (ETDEWEB)
Davis, J. S.; Keiter, P. A.; Klein, S. R.; Drake, R. P.; Shvarts, D. [University of Michigan, 2455 Hayward St., Ann Arbor, Michigan 48109 (United States); Frank, Y.; Raicher, E.; Fraenkel, M. [Soreq Nuclear Research Center, Yavne (Israel)
2016-11-15
Soft x-ray emission from laser irradiated gold foils was measured at the Omega-60 laser system using the Dante photodiode array. The foils were heated with 2 kJ, 6 ns laser pulses and foil thicknesses were varied between 0.5, 1.0, and 2.0 μm. Initial Dante analysis indicates peak emission temperatures of roughly 100 eV and 80 eV for the 0.5 μm and 1.0 μm thick foils, respectively, with little measurable emission from the 2.0 μm foils.
-
Search for pulsed gamma rays of approx.1013 eV from NP 0532
International Nuclear Information System (INIS)
Erickson, R.A.; Fickle, R.K.; Lamb, R.C.
1976-01-01
A ground-based Cerenkov light receiver located near Ames, Iowa, was aimed at the Crab Nebula during five nights of 1975 February and March to search for γ-ray emission from NP 0532. The time distribution of detected events shows no evidence for pulsation at either the main peak or interpulse phases. Data from one of the five nights show a statistically significant level of activity as determined by a X 2 test, incompatible with events random in time at less than the 1 percent level. This result and data from neighboring nights suggest the existence of a high-energy (approximately-greater-than2 x 10 13 eV) flux, variable on a time scale less than a day, which is not at the main or interpulse phases. The pulsed photon intensity averaged over all five nights is: I (approximately-greater-than2 x 10 13 eV) =1.2(+1.4, -0.9) x 10 12 photons cm -2 s -1
-
International Nuclear Information System (INIS)
Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.
1996-01-01
The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics
-
Directional uv photoemission from (100) and (110) molybdenum surfaces
DEFF Research Database (Denmark)
Cinti, R. C.; Khoury, E. Al; Chakraverty, B. K.
1976-01-01
A study of the (100) and (110) molybdenum surfaces by directional photoemission spectroscopy is presented. Energy distribution spectra formed by photoelectrons emitted normal to the surfaces have been measured for photon energies between 10.2 and 21.2 eV. The results are discussed in terms of cal......-transition and surface-emission processes. Two extra structures are interpreted in terms of surface states or resonances: on the (100) surface, 0.5 eV below EF; on the (110) surface, 4.5 eV below EF in the s-d hybridization gap....... of calculated band structure within the framework of the K∥-conservation assumption. A good agreement is found between the main features of the experimental spectra and the emission expected from the band structure along the corresponding symmetry line in the Brillouin zone, assuming essentially direct...
-
Rocket-borne EUV-visible emission measurements
International Nuclear Information System (INIS)
Schmidtke, G.; Baker, K.D.; Stasek, G.
1982-01-01
Two rocket-borne experiments for measuring EUV atmospheric emissions have been conducted. The first measured emissions at 391.4 nm and 557.7 nm, and the second measured emissions in the range from 50 to 650 nm. Height profiles of selected auroral emissions from atomic oxygen at 130.4 nm (exhibiting resonant radiation diffusion) and from atomic oxygen at 557.7 nm, and from neutral and ionized molecular nitrogen are shown. Some details of the recorded spectra are given. In the shorter wavelength regions, emissions from atomic oxygen and nitrogen dominate. Over 140 nm, Lyman-Birge-Hopfield bands, second positive bands and Vegard-Kaplan bands of molecular nitrogen contribute most strongly except for some atomic lines. The Lyman-Birge-Hopfield bands of molecular nitrogen are relatively weak during the auroral arc as compared to the diffuse aurora
-
High-Resolution Electron-Impact Study of the Far-Ultraviolet Emission Spectrum of Molecular Hydrogen
Liu, Xian-Ming; Ahmed, Syed M.; Multari, Rosalie A.; James, Geoffrey K.; Ajello, Joseph M.
1995-01-01
The emission spectrum of molecular hydrogen produced by electron-impact excitation at 100 eV has been measured in the wavelength range 1140-1690 A. High-resolution, optically thin spectra (delta(lambda) = 0.136 A) of the far-ultraviolet (FUV) Lyman and Werner band systems have been obtained with a newly constructed 3 m spectrometer. Synthetic spectral intensities based on the transition probabilities calculated by Abgrall et al. are in very good agreement with experimentally observed intensities. Previous modeling that utilized Allison & Daigarno band transition probabilities with Hoenl-London factors breaks down when the transition moment has significant J dependence or when ro-vibrational coupling is significant. Ro-vibrational perturbation between upsilon = 14 of the B(sup 1)Sigma(sup +, sub u) state and upsilon = 3 of the C(sup 1)Pi(sub u) state and the rotational dependence of the transition moment in the bands of the Lyman system are examined. Complete high-resolution experimental reference FUV spectra, together with the model synthetic spectra based on the Abgrall transition probabilities, are presented. An improved calibration standard is obtained, and an accurate calibration of the 3 m spectrometer has been achieved.
-
Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene.
Wang, Xinquan; Wu, Zhigang
2017-01-18
It has been long sought to create magnetism out of simple non-magnetic materials, such as silicon and germanium. Here we show that intrinsic magnetism exists in bilayer silicene and germanene with no need to cut, etch, or dope. Unlike bilayer graphene, strong covalent interlayer bonding formed in bilayer silicene and germanene breaks the original π-bonding network of each layer, leaving the unbonded electrons unpaired and localized to carry magnetic moments. These magnetic moments then couple ferromagnetically within each layer while antiferromagnetically across two layers, giving rise to an infinite magnetic sheet with structural integrity and magnetic homogeneity. Furthermore, this unique magnetic ordering results in fundamental band gaps of 0.55 eV and 0.32 eV for bilayer silicene and germanene, respectively. The integration of intrinsic magnetism and spontaneous band gap opening makes bilayer silicene and germanene attractive for future nanoelectronics as well as spin-based computation and data storage.
-
Energy Technology Data Exchange (ETDEWEB)
Stock, D. J.; Peeters, E., E-mail: dstock84@gmail.com [Department of Physics and Astronomy, University of Western Ontario, London, ON, N6A 3K7 (Canada)
2017-03-10
We decompose the observed 7.7 μ m polycyclic aromatic hydrocarbon (PAH) emission complexes in a large sample of over 7000 mid-infrared spectra of the interstellar medium using spectral cubes observed with the Spitzer /IRS-SL instrument. In order to fit the 7.7 μ m PAH emission complex we invoke four Gaussian components, which are found to be very stable in terms of their peak positions and widths across all of our spectra, and subsequently define a decomposition with fixed parameters, which gives an acceptable fit for all the spectra. We see a strong environmental dependence on the interrelationships between our band fluxes—in the H ii regions all four components are intercorrelated, while in the reflection nebulae (RNs) the inner and outer pairs of bands correlate in the same manner as previously seen for NGC 2023. We show that this effect arises because the maps of RNs are dominated by emission from strongly irradiated photodissociation regions, while the much larger maps of H ii regions are dominated by emission from regions much more distant from the exciting stars, leading to subtly different spectral behavior. Further investigation of this dichotomy reveals that the ratio of two of these components (centered at 7.6 and 7.8 μ m) is linearly related to the UV-field intensity (log G {sub 0}). We find that this relationship does not hold for sources consisting of circumstellar material, which are known to have variable 7.7 μ m spectral profiles.
-
Vibrational effects on surface energies and band gaps in hexagonal and cubic ice
International Nuclear Information System (INIS)
Engel, Edgar A.; Needs, Richard J.; Monserrat, Bartomeu
2016-01-01
Surface energies of hexagonal and cubic water ice are calculated using first-principles quantum mechanical methods, including an accurate description of anharmonic nuclear vibrations. We consider two proton-orderings of the hexagonal and cubic ice basal surfaces and three proton-orderings of hexagonal ice prism surfaces, finding that vibrations reduce the surface energies by more than 10%. We compare our vibrational densities of states to recent sum frequency generation absorption measurements and identify surface proton-orderings of experimental ice samples and the origins of characteristic absorption peaks. We also calculate zero point quantum vibrational corrections to the surface electronic band gaps, which range from −1.2 eV for the cubic ice basal surface up to −1.4 eV for the hexagonal ice prism surface. The vibrational corrections to the surface band gaps are up to 12% smaller than for bulk ice.
-
Yang, Jingxiu; Zhang, Peng; Wei, Su-Huai
2018-01-04
Cs 2 AgBiBr 6 was proposed as one of the inorganic, stable, and nontoxic replacements of the methylammonium lead halides (CH 3 NH 3 PbI 3 , which is currently considered as one of the most promising light-harvesting material for solar cells). However, the wide indirect band gap of Cs 2 AgBiBr 6 suggests that its application in photovoltaics is limited. Using the first-principle calculation, we show that by controlling the ordering parameter at the mixed sublattice, the band gap of Cs 2 AgBiBr 6 can vary continuously from a wide indirect band gap of 1.93 eV for the fully ordered double-perovskite structure to a small pseudodirect band gap of 0.44 eV for the fully random alloy. Therefore, one can achieve better light absorption simply by controlling the growth temperature and thus the ordering parameters and band gaps. We also show that controlled doping in Cs 2 AgBiBr 6 can change the energy difference between ordered and disordered Cs 2 AgBiBr 6 , thus providing further control of the ordering parameters and the band gaps. Our study, therefore, provides a novel approach to carry out band structure engineering in the mixed perovskites for optoelectronic applications.
-
García-Cuesta, Esteban; de Castro, Antonio J; Galván, Inés M; López, Fernando
2014-01-01
In this work, a methodology based on the combined use of a multilayer perceptron model fed using selected spectral information is presented to invert the radiative transfer equation (RTE) and to recover the spatial temperature profile inside an axisymmetric flame. The spectral information is provided by the measurement of the infrared CO2 emission band in the 3-5 μm spectral region. A guided spectral feature selection was carried out using a joint criterion of principal component analysis and a priori physical knowledge of the radiative problem. After applying this guided feature selection, a subset of 17 wavenumbers was selected. The proposed methodology was applied over synthetic scenarios. Also, an experimental validation was carried out by measuring the spectral emission of the exhaust hot gas plume in a microjet engine with a Fourier transform-based spectroradiometer. Temperatures retrieved using the proposed methodology were compared with classical thermocouple measurements, showing a good agreement between them. Results obtained using the proposed methodology are very promising and can encourage the use of sensor systems based on the spectral measurement of the CO2 emission band in the 3-5 μm spectral window to monitor combustion processes in a nonintrusive way.
-
Magnetic dichroism in UV photoemission at off-normal emission: Study of the valence bands
International Nuclear Information System (INIS)
Venus, D.; Kuch, W.; Lin, M.; Schneider, C.M.; Ebert, H.; Kirschner, J.
1997-01-01
Magnetic dichroism of angle-resolved UV photoemission from fcc Co/Cu(001) thin films has been measured using linearly p-polarized light, and a coplanar geometry where the light and photoelectron wave vectors are antiparallel, and both are perpendicular to the in-plane sample magnetization. This geometry emphasizes information about state dispersion due to the crystalline symmetry. An orderly dispersion of the features in the magnetic dichroism over a wide range of off-normal angles of electron emission is related in detail to the bulk band structure of fcc Co. The measurements confirm the practical utility of magnetic dichroism experiments as a relatively simple complement to spin-resolved photoemission. copyright 1997 The American Physical Society
-
Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas
International Nuclear Information System (INIS)
Zhao, H. Y.; Zhao, H. W.; Sun, L. T.; Zhang, X. Z.; Wang, H.; Ma, B. H.; Li, X. X.; Zhu, Y. H.; Sheng, L. S.; Zhang, G. B.; Tian, Y. C.
2008-01-01
Extreme ultraviolet lithography (EUVL) is considered as the most promising solution at and below dynamic random access memory 32 nm half pitch among the next generation lithography, and EUV light sources with high output power and sufficient lifetime are crucial for the realization of EUVL. However, there is no EUV light source completely meeting the requirements for the commercial application in lithography yet. Therefore, ECR plasma is proposed as a novel concept EUV light source. In order to investigate the feasibility of ECR plasma as a EUV light source, the narrow band EUV power around 13.5 nm emitted by two highly charged ECR ion sources--LECR2M and SECRAL--was measured with a calibrated EUV power measurement tool. Since the emission lines around 13.5 nm can be attributed to the 4d-5p transitions of Xe XI or the 4d-4f unresolved transition array of Sn VIII-XIII, xenon plasma was investigated. The dependence of the EUV throughput and the corresponding conversion efficiency on the parameters of the ion source, such as the rf power and the magnetic confinement configurations, were preliminarily studied
-
Impact of Antibody Bioconjugation on Emission and Energy Band Profile of CdSeTe/ZnS Quantum Dots
Torchynska, T. V.; Gomez, J. A. Jaramillo; Polupan, G.; Macotela, L. G. Vega
2018-03-01
The variation of the photoluminescence (PL) and Raman scattering spectra of CdSeTe/ZnS quantum dots (QDs) on conjugation to an antibody has been investigated. Two types of CdSeTe/ZnS QD with different emission wavelength (705 nm and 800 nm) were studied comparatively before and after conjugation to anti-pseudorabies virus antibody (AB). Nonconjugated QDs were characterized by Gaussian-type PL bands. PL shifts to higher energy and asymmetric shape of PL bands was detected in PL spectra of bioconjugated QDs. The surface-enhanced Raman scattering effect was exhibited by the bioconjugated CdSeTe/ZnS QDs, indicating that the excitation light used in the Raman study generated electric dipoles in the AB molecules. The optical bandgap of the CdSeTe core was calculated numerically as a function of its radius based on an effective mass approximation model. The energy band diagrams for non- and bioconjugated CdSeTe/ZnS QDs were obtained, revealing a type II quantum well in the CdSeTe core. The calculations show that AB dipoles, excited in the bioconjugated QDs, stimulate a change in the energy band diagram of the QDs that alters the PL spectrum. These results could be useful for improving the sensitivity of QD biosensors.
-
Energy Technology Data Exchange (ETDEWEB)
Dixit, Tejendra, E-mail: phd12110211@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Palani, I.A., E-mail: palaniia@iiti.ac.in [Mechatronics and Instrumentation Lab, Department of Mechanical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India); Singh, Vipul, E-mail: vipul@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India)
2016-02-15
The room-temperature photoluminescence (PL) spectra of hydrothermally grown ZnO nanorods (NRs) coated with Au using dc sputtering and thermal evaporation were systematically investigated. Au coated (via dc sputtering) ZnO NRs were found to exhibit very large near band edge emission enhancement, on the contrary Au coated (via thermal evaporation) ZnO NRs showed suppression in the near band edge emission peak. These observed results were further confirmed by excitation intensity (EI) dependent PL spectra of different samples. Further using Raman spectra it has been observed that the longitudinal optical (LO) phonons exhibit an enhancement and a weakening by the Au coatings, using dc sputtering and thermal evaporation respectively. Finally by controlling the concentration of KMnO{sub 4} as an additive during the hydrothermal growth, selective tuning in the defect density was carried out, which was later utilized to probe the effect of defect density of the Au–ZnO plasmonic coupling. Moreover, our results strongly suggest that the EI dependent PL has a strong dependence on the metal coating technique. The findings presented in this article clearly indicate the dependence of Au–ZnO plasmonic coupling on the overall defect density and the process of Au deposition.
-
Enumeration Verification System (EVS)
Social Security Administration — EVS is a batch application that processes for federal, state, local and foreign government agencies, private companies and internal SSA customers and systems. Each...
-
Spectrum of acetylene fluorescence excited by single XUV photons
International Nuclear Information System (INIS)
Schmieder, R.W.
1982-01-01
The spectrum of visible emission from photofragments of acetylene excited by single 16.85 eV photons has been recorded for the first time. The spectrum is dominated by the Swan and Deslandres-d'Azambuja bands of C 2 and the 431.5 nm band of CH. The yields of these emissions are of the order 10 -3 photons per absorbed incident photon. The experimental conditions suggest that the emission results from primary C* 2 and CH* photofragments
-
Band Gap Engineering of Titania Systems Purposed for Photocatalytic Activity
Thurston, Cameron
Ab initio computer aided design drastically increases candidate population for highly specified material discovery and selection. These simulations, carried out through a first-principles computational approach, accurately extrapolate material properties and behavior. Titanium Dioxide (TiO2 ) is one such material that stands to gain a great deal from the use of these simulations. In its anatase form, titania (TiO2 ) has been found to exhibit a band gap nearing 3.2 eV. If titania is to become a viable alternative to other contemporary photoactive materials exhibiting band gaps better suited for the solar spectrum, then the band gap must be subsequently reduced. To lower the energy needed for electronic excitation, both transition metals and non-metals have been extensively researched and are currently viable candidates for the continued reduction of titania's band gap. The introduction of multicomponent atomic doping introduces new energy bands which tend to both reduce the band gap and recombination loss. Ta-N, Nb-N, V-N, Cr-N, Mo-N, and W-N substitutions were studied in titania and subsequent energy and band gap calculations show a favorable band gap reduction in the case of passivated systems.
-
Resonant x-ray emission from gas-phase TiCl4
International Nuclear Information System (INIS)
Hague, C.F.; Tronc, M.; De Groot, F.
1997-01-01
Resonant x-ray emission spectroscopy (RXES) has proved to be a powerful tool for studying the electronic structure of condensed matter. Over the past few years it has been used mainly for studying the valence bands of solids and condensed molecules. Very recently the advent of high brightness photon beams provided by third generation synchrotron radiation source undulators, associated with efficient x-ray emission spectrometers has made it possible to perform experiments on free diatomic molecular systems. RXE spectra of free molecules are of prime importance to gain insight into their electronic structure and bonding as they reflect the symmetry of orbitals engaged in the two-electron, two-step process with the l = 0, ±2 parity-conserving selection rule, and are free from solid state effects which can introduce difficulties in the interpretation. They provide information (more so than XAS) on the core excited states, and, when performed at fixed incident photon energy as a function of the emitted photon energy, on the electronic excitation (charge transfer, multiplet states). Moreover the anisotropy of the angular distribution of resonant x-ray emission affects the relative intensity of the emission peaks and provides information concerning the symmetries of final states. This is a preliminary report on what are the first RXE spectra of a 3d transition metal complex in the gas phase. The experiment concerns the Ti 3d →2p emission spectrum of TiCl 4 over the 450 to 470 eV region
-
EV Charging Algorithm Implementation with User Price Preference
Energy Technology Data Exchange (ETDEWEB)
Wang, Bin; Hu, Boyang; Qiu, Charlie; Chu, Peter; Gadh, Rajit
2015-02-17
in this paper, we propose and implement a smart Electric Vehicle (EV) charging algorithm to control the EV charging infrastructures according to users’ price preferences. EVSE (Electric Vehicle Supply Equipment), equipped with bidirectional communication devices and smart meters, can be remotely monitored by the proposed charging algorithm applied to EV control center and mobile app. On the server side, ARIMA model is utilized to fit historical charging load data and perform day-ahead prediction. A pricing strategy with energy bidding policy is proposed and implemented to generate a charging price list to be broadcasted to EV users through mobile app. On the user side, EV drivers can submit their price preferences and daily travel schedules to negotiate with Control Center to consume the expected energy and minimize charging cost simultaneously. The proposed algorithm is tested and validated through the experimental implementations in UCLA parking lots.
-
Pavlin, Valentina
2011-01-01
Namen diplomskega dela je podati predloge za izboljšanje nivoja poznavanja kakovosti v povezavi z uporabnostjo otroških avtosedežev. S pomočjo anketnega vprašalnika smo pridobili pomembna mnenja uporabnikov o otroških avtosedežih. Raziskava je vključevala 50 anketirancev, ki so bili naključno izbrani v eni izmed otroških trgovin. Rezultati ankete so pokazali, da uporabniki osnovno znanje o kakovosti otroških avtosedežev imajo. Na prvo mesto uvrščajo kakovost in varnost, najmanj pa se...
-
Energy Technology Data Exchange (ETDEWEB)
Singh, S.D., E-mail: devsh@rrcat.gov.in [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Nand, Mangla [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Ajimsha, R.S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Jha, S.N. [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Ganguli, Tapas [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)
2016-12-15
Highlights: • Valence band offset at NiO/MgO heterojunction is experimentally determined. • Experimentally determined value of 2.3 ± 0.4 eV is significantly larger than the predicted from theoretical calculations. • The value of valence band offset is in corroboration with that estimated from the band transitivity model. • Our result can be used to predict accurately carrier transport and electroluminescence mechanisms for heterojunction LEDs. - Abstract: Valence band offset of 2.3 ± 0.4 eV at strained NiO/MgO heterojunction is determined from photoelectron spectroscopy (PES) measurements. The determined value of valence band offset is larger than that is predicted from first principle calculations, but is in corroboration with that obtained from band transitivity rule. Our PES result indicates a larger value of the valence band offset at strained NiO/MgO heterojunction and can be used to predict accurately carrier transport and electroluminescence mechanisms for n-ZnO/MgO/p-NiO and p-NiO/MgO/n-GaN heterojunction light emitting diodes.
-
Cook, D. J.; Schlemmer, S.; Balucani, N.; Wagner, D. R.; Harrison, J. A.; Steiner, B.; Saykally, R. J.
1998-01-01
Single-photon infrared emission spectroscopy (SPIRES) has been used to measure emission spectra from polycyclic aromatic hydrocarbons (PAHs). A supersonic free-jet expansion has been used to provide emission spectra of rotationally cold and vibrationally excited naphthalene and benzene. Under these conditions, the observed width of the 3.3-micrometers (C-H stretch) band resembles the bandwidths observed in experiments in which emission is observed from naphthalene with higher rotational energy. To obtain complete coverage of IR wavelengths relevant to the unidentified infrared bands (UIRs), UV laser-induced desorption was used to generate gas-phase highly excited PAHs. Lorentzian band shapes were convoluted with the monochromator-slit function in order to determine the widths of PAH emission bands under astrophysically relevant conditions. Bandwidths were also extracted from bands consisting of multiple normal modes blended together. These parameters are grouped according to the functional groups mostly involved in the vibration, and mean bandwidths are obtained. These bandwidths are larger than the widths of the corresponding UIR bands. However, when the comparison is limited to the largest PAHs studied, the bandwidths are slightly smaller than the corresponding UIR bands. These parameters can be used to model emission spectra from PAH cations and cations of larger PAHs, which are better candidate carriers of the UIRs.
-
Band Alignment at GaN/Single-Layer WSe2 Interface
Tangi, Malleswararao
2017-02-21
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
-
Band Alignment at GaN/Single-Layer WSe2 Interface
Tangi, Malleswararao; Mishra, Pawan; Tseng, Chien-Chih; Ng, Tien Khee; Hedhili, Mohamed N.; Anjum, Dalaver H.; Alias, Mohd Sharizal; Wei, Nini; Li, Lain-Jong; Ooi, Boon S.
2017-01-01
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
-
Luminescence and excited state dynamics in Bi3+-doped LiLaP4O12 phosphates
International Nuclear Information System (INIS)
Babin, V.; Chernenko, K.; Demchenko, P.; Mihokova, E.; Nikl, M.; Pashuk, I.; Shalapska, T.; Voloshinovskii, A.; Zazubovich, S.
2016-01-01
Photo- and X-ray-excited luminescence characteristics of Bi-doped LiLaP 4 O 12 phosphates with different bismuth contents (from 1 to 25 at% in the melt) are investigated in the 4.2–300 K temperature range and compared with the characteristics of the undoped LiLaP 4 O 12 phosphate. The broad 2.95 eV emission band of LiLaP 4 O 12 :Bi excited around 5.4 eV is found to arise from the bismuth dopant. Relatively large FWHM and Stokes shift of the emission band and especially the data on the low-temperature decay kinetics of the 2.95 eV emission and its temperature dependence, indicating a very small spin-orbit splitting energy of the corresponding excited state, allow the conclusion that this emission arises from the radiative decay of the triplet state of an exciton localized around a Bi 3+ ion. No spectral bands are observed, arising from the electron transitions between the energy levels of Bi 3+ ions. Phenomenological model is proposed for the description of the excited state dynamics of the Bi 3+ -related localized exciton in LiLaP 4 O 12 :Bi and the parameters of the triplet localized exciton state are determined. Keywords: Photoluminescence; Time-resolved spectroscopy; Excited states; Bi 3+ centers; LiLaP 4 O 12 :Bi powders
-
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
Sun, Haiding; Park, Young Jae; Li, Kuang-Hui; Torres Castanedo, C. G.; Alowayed, Abdulmohsen; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang
2017-01-01
Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.
-
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
Sun, Haiding
2017-09-21
Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.
-
Takahara, Shogo; Yoshida, Tomoko; Tanabe, Tetuo; , Tatuya, Ii; Hirano, Masahiro; Okada, Moritami
2004-06-01
In order to investigate the temperature effects on the dynamic radiation damaging process, we have carried out in situ measurements of in-reactor luminescence (IRL) and gamma-ray induced luminescence (GIL) of a silica glass at temperatures ranging from 70 K to 370 K. Both luminescence spectra were found to consist of two broad emission centers at 3.1 eV and 4.1 eV with an additional temperature independent emission around 2.5 eV. The 2.5 eV emission different from the other two showed long tail to the lower energy side and was attributed to the Cherenkov radiation. The 3.1 eV band was attributed to a B 2 β oxygen deficient center on the basis of our photoluminescence measurement. The intensity of the 3.1 eV IRL increased with increasing temperature up to ca. 200 K and saturated above 200 K, which is clearly different from the reported temperature dependence of 3.1 eV photoluminescence, suggesting the existence of some different relaxation mechanism of excited electron under ionizing radiations.
-
Probe-Hole Field Emission Microscope System Controlled by Computer
Gong, Yunming; Zeng, Haishan
1991-09-01
A probe-hole field emission microscope system, controlled by an Apple II computer, has been developed and operated successfully for measuring the work function of a single crystal plane. The work functions on the clean W(100) and W(111) planes are measured to be 4.67 eV and 4.45 eV, respectively.
-
Gain flattened L-band EDFA based on upgraded C-band EDFA using forward ASE pumping in an EDF section
DEFF Research Database (Denmark)
Buxens Azcoaga, Alvaro Juan; Poulsen, Henrik Nørskov; Clausen, Anders
2000-01-01
A novel method is presented for implementing an L-band erbium doped fibre amplifier (EDFA) making use of forward amplified spontaneous emission pumping, from a commercially available c-band EDFA, in an erbium doped fibre. Tuning of the length of erbium doped fibre enables a flat gain characteristic...... to be obtained with a low noise figure over the entire L-band window....
-
International Nuclear Information System (INIS)
Filatov, D. O.; Zimovets, I. A.; Isakov, M. A.; Kuznetsov, V. P.; Kornaukhov, A. V.
2011-01-01
The method of ballistic electron emission spectroscopy is used for the first time to study the energy spectrum of Er-impurity complexes in Si. The features are observed in the ballistic electron spectra of mesa diodes based on p + -n + Si structures with a thin (∼30 nm) p + -Si:Er surface layer in the region of ballistic-electron energies eV t lower than the conduction-band-edge energy E c in this layer. They are associated with the tunnel injection of ballistic electrons from the probe of the scanning tunnel microscope to the deep donor levels of the Er-impurity complexes in the p + -Si:Er layer with subsequent thermal excitation into the conduction band and the diffusion to the p + -n + junction and the direct tunneling in it. To verify this assumption, the ballistic-electron transport was simulated in the system of the Pt probe, native-oxide layer SiO 2 -p + -Si:Er-n + , and Si substrate. By approximating the experimental ballistic-electron spectra with the modeling spectra, the ground-state energy of the Er complex in Si was determined: E d ≈ E c − 0.27 eV. The indicated value is consistent with the data published previously and obtained from the measurements of the temperature dependence of the free-carrier concentration in Si:Er layers.
-
Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se{sub 2} solar cells
Energy Technology Data Exchange (ETDEWEB)
Yang, J.; Du, H. W.; Li, Y.; Gao, M.; Wan, Y. Z.; Xu, F. [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai, 200444 (China); Ma, Z. Q., E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai, 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai, 200444 (China)
2016-08-15
The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se{sub 2} thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely V{sub Se}, In{sub Cu} and (In{sub Cu}+V{sub Cu}), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of E{sub C}-0.08, E{sub C}-0.20 and E{sub C}-0.25 eV, respectively. The In{sub Cu} and (In{sub Cu}+V{sub Cu}) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se{sub 2} layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (In{sub Cu}+V{sub Cu}) and V{sub se} defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se{sub 2} conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.
-
Energy Technology Data Exchange (ETDEWEB)
Tondu, Thomas; Belhaj, Mohamed; Inguimbert, Virginie [Onera, DESP, 2 Avenue Edouard Belin, 31400 Toulouse (France); Onera, DESP, 2 Avenue Edouard Belin, 31400 Toulouse, France and Fondation STAE, 4 allee Emile Monso, BP 84234-31432, Toulouse Cedex 4 (France); Onera, DESP, 2 Avenue Edouard Belin, 31400 Toulouse (France)
2010-09-15
Secondary electron emission yield of gold under electron impact at normal incidence below 50 eV was investigated by the classical collector method and by the Kelvin probe method. The authors show that biasing a collector to ensure secondary electron collection while keeping the target grounded can lead to primary electron beam perturbations. Thus reliable secondary electron emission yield at low primary electron energy cannot be obtained with a biased collector. The authors present two collector-free methods based on current measurement and on electron pulse surface potential buildup (Kelvin probe method). These methods are consistent, but at very low energy, measurements become sensitive to the earth magnetic field (below 10 eV). For gold, the authors can extrapolate total emission yield at 0 eV to 0.5, while a total electron emission yield of 1 is obtained at 40{+-}1 eV.
-
International Nuclear Information System (INIS)
Tondu, Thomas; Belhaj, Mohamed; Inguimbert, Virginie
2010-01-01
Secondary electron emission yield of gold under electron impact at normal incidence below 50 eV was investigated by the classical collector method and by the Kelvin probe method. The authors show that biasing a collector to ensure secondary electron collection while keeping the target grounded can lead to primary electron beam perturbations. Thus reliable secondary electron emission yield at low primary electron energy cannot be obtained with a biased collector. The authors present two collector-free methods based on current measurement and on electron pulse surface potential buildup (Kelvin probe method). These methods are consistent, but at very low energy, measurements become sensitive to the earth magnetic field (below 10 eV). For gold, the authors can extrapolate total emission yield at 0 eV to 0.5, while a total electron emission yield of 1 is obtained at 40±1 eV.
-
International Nuclear Information System (INIS)
Zhai, Hua-jin; Wang, Lai S.
2007-01-01
TiO2 is a wide-band gap semiconductor and it is an important material for photocatalysis. Here we report an experimental investigation of the electronic structure of (TiO2)n clusters and how their band gap evolves as a function of size using anion photoelectron spectroscopy (PES). PES spectra of (TiO2)n- clusters for n = 1-10 have been obtained at 193 (6.424 eV) and 157 nm (7.866 eV). The high photon energy at 157 nm allows the band gap of the TiO2 clusters to be clearly revealed up to n = 10. The band gap is observed to be strongly size-dependent for n 1 appears to be localized in a tricoordinated Ti atom, creating a single Ti3+ site and making these clusters ideal molecular models for mechanistic understanding of TiO2 surface defects and photocatalytic properties
-
New Kronig-Penney Equation Emphasizing the Band Edge Conditions
Szmulowicz, Frank
2008-01-01
The Kronig-Penney problem is a textbook example for discussing band dispersions and band gap formation in periodic layered media. For example, in photonic crystals, the behaviour of bands next to the band edges is important for further discussions of such effects as inhibited light emission, slow light and negative index of refraction. However,…
-
Xiao, Hong; Huang, Hai-Jun; Tang, Tie-Qiao
2017-12-01
Electric vehicle (EV) has become a potential traffic tool, which has attracted researchers to explore various traffic phenomena caused by EV (e.g. congestion, electricity consumption, etc.). In this paper, we study the energy consumption (including the fuel consumption and the electricity consumption) and emissions of heterogeneous traffic flow (that consists of the traditional vehicle (TV) and EV) under three traffic situations (i.e. uniform flow, shock and rarefaction waves, and a small perturbation) from the perspective of macro traffic flow. The numerical results show that the proportion of electric vehicular flow has great effects on the TV’s fuel consumption and emissions and the EV’s electricity consumption, i.e. the fuel consumption and emissions decrease while the electricity consumption increases with the increase of the proportion of electric vehicular flow. The results can help us better understand the energy consumption and emissions of the heterogeneous traffic flow consisting of TV and EV.
-
Synthesis and luminescent study of Ce3+-doped terbium–yttrium aluminum garnet
International Nuclear Information System (INIS)
Dotsenko, V.P.; Berezovskaya, I.V.; Zubar, E.V.; Efryushina, N.P.; Poletaev, N.I.; Doroshenko, Yu.A.; Stryganyuk, G.B.; Voloshinovskii, A.S.
2013-01-01
Highlights: ► Ce 3+ -doped garnets (TYAG) were prepared using nanostructured reagents. ► The Ce 3+ ions cause a very efficient yellow emission of the samples. ► The reasons for the long wavelength position of this emission are discussed. ► Contribution from Al atoms to the conduction band of TYAG is quite essential. - Abstract: Terbium–yttrium aluminum garnets (TYAG) doped with Ce 3+ ions have been prepared by solid state reactions between nanostructured oxides of aluminum and rare earths. The luminescent properties of Ce 3+ ions in (Tb 0.8 Y 0.2 ) 3(1−x) Ce 3x Al 5 O 12 (x = 0.03) have been studied upon excitation in the 2–20 eV region. The substitution of Tb 3+ for Y 3+ in the garnet structure results in broadening the emission band and shifting its maximum towards the longer wavelengths. It was found that in addition to the 4f n → 4f n−1 5d excitation bands of Ce 3+ and Tb 3+ ions, the excitation spectra for the Ce 3+ emission contain broad bands at 6.73 and ∼9.5 eV. These bands are attributed to the Ce 3+ -bound exciton formation and O 2p → Al 3s, 3p transitions, respectively. In contrast to the predictions based on the results of electronic structure calculations on Y 3 Al 5 O 12 and Tb 4 Al 2 O 9 , the threshold of interband transitions in TYAG is at high energies (⩾7.3 eV), and contributions from Al tetr and Al oct atoms to the conduction-band density of states are evaluated as quite essential.
-
Band Gap Modulated by Electronic Superlattice in Blue Phosphorene.
Zhuang, Jincheng; Liu, Chen; Gao, Qian; Liu, Yani; Feng, Haifeng; Xu, Xun; Wang, Jiaou; Zhao, Jijun; Dou, Shi Xue; Hu, Zhenpeng; Du, Yi
2018-05-22
Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.
-
Band structure of CdTe under high pressure
International Nuclear Information System (INIS)
Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.
2005-01-01
The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)
-
International Nuclear Information System (INIS)
Ibach, T.
1983-01-01
For analysing the emission and stopping of ionization electrons (σ-electrons) emitted by fast ions passing through a gas, the radial density distribution of the light emission of the (0,0) transition of two optical bands in nitrogen have been measured. The systems selected for the epxeriments are the 2nd positive system (2.PS) at 337.1 nm primarily excited by low-energy electrons of about 20 eV, and the first negative system (1.NS) at 391.4 nm excited by faster electrons and simultaneous ionization. The equipment developed for the experiments records the light emission with a telescope-type optical arrangement including interference filters, allowing high local resolution and dynamics of the measured range. The measurements have been carried out at pressures between 0.133 and 13.3 mbar, using photons of energies ranging from 270 keV to 2.8 MeV, helium 3 beams of 270 keV/u and 500 keV/u, and neon beams of 270 keV/u. Abel's inversion applied to the distance functions allows calculation of the spatial light emission density which is normalized for a gas density of 1 g/cm 3 . The profiles of the two bands indicate that the σ-electron spectrum gets harder in outward direction. Next to the beam the impact density decreases faster with increasing ion energy than the stopping power (increasing interaction range of the σ-electrons). With photon beams, about half of the whole light emission in the 1. NS, and of the ionization, is induced by primary interactions of the ion beam. This proportion decreases at constant energy per nucleon with increasing atomic number of the ions as compared with the σ-electrons. The primary σ-emission gets harder with higher atomic numbers. (orig./HP) [de
-
Calibration of VIIRS F1 Sensor Fire Detection Band Using lunar Observations
McIntire, Jeff; Efremova, Boryana; Xiong, Xiaoxiong
2012-01-01
Visible Infrared Imager Radiometer Suite (VIIRS) Fight 1 (Fl) sensor includes a fire detection band at roughly 4 microns. This spectral band has two gain states; fire detection occurs in the low gain state above approximately 345 K. The thermal bands normally utilize an on-board blackbody to provide on-orbit calibration. However, as the maximum temperature of this blackbody is 315 K, the low gain state of the 4 micron band cannot be calibrated in the same manner as the rest of the thermal bands. Regular observations of the moon provide an alternative calibration source. The lunar surface temperature has been recently mapped by the DIVINER sensor on the LRO platform. The periodic on-board high gain calibration along with the DIVINER surface temperatures was used to determine the emissivity and solar reflectance of the lunar surface at 4 microns; these factors and the lunar data are then used to fit the low gain calibration coefficients of the 4 micron band. Furthermore, the emissivity of the lunar surface is well known near 8.5 microns due to the Christiansen feature (an emissivity maximum associated with Si-O stretching vibrations) and the solar reflectance is negligible. Thus, the 8.5 micron band is used for relative calibration with the 4 micron band to de-trend any temporal variations. In addition, the remaining thermal bands are analyzed in a similar fashion, with both calculated emissivities and solar reflectances produced.
-
Origin of green luminescence in hydrothermally grown ZnO single crystals
Energy Technology Data Exchange (ETDEWEB)
Čížek, J., E-mail: jakub.cizek@mff.cuni.cz; Hruška, P.; Melikhova, O.; Procházka, I. [Department of Low-Temperature Physics, Charles University in Prague, V Holešovičkách 2, CZ-180 00, Prague 8 (Czech Republic); Valenta, J. [Department of Chemical Physics and Optics, Charles University in Prague, Ke Karlovu 3, CZ-121 16, Prague 2 (Czech Republic); Novotný, M.; Bulíř, J. [Academy of Science of the Czech Republic, Institute of Physics, Na Slovance 2, CZ-182 21 Praha 8 (Czech Republic)
2015-06-22
Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.
-
Origin of green luminescence in hydrothermally grown ZnO single crystals
International Nuclear Information System (INIS)
Čížek, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Valenta, J.; Novotný, M.; Bulíř, J.
2015-01-01
Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration
-
Origin of green luminescence in hydrothermally grown ZnO single crystals
Čížek, J.; Valenta, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Novotný, M.; Bulíř, J.
2015-06-01
Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.
-
X-ray absorption and emission study of amorphous and nanocrystalline GaN films containing buried N2
International Nuclear Information System (INIS)
Ruck, B.J.; Koo, A.; Budde, F.; Granville, S.; Trodahl, H.J.
2004-01-01
Full text: It has been predicted that amorphous gallium nitride (a-GaN) may possess a well-defined wide band gap, and is thus a potential substitute for the more expensive crystalline form used in short wavelength optoelectronic devices. Experimental investigations of disordered GaN have lent support to this prediction, but the picture is complicated because the properties of the amorphous state are not unique, and instead depend on the exact nature of the disordered structure. We have pioneered a novel ion-assisted growth technique that produces GaN films with a microstructure that ranges from nanocrystalline, with crystallite size of order 3 nm, to fully amorphous, depending on the exact growth conditions. This presentation will give an overview of our research into the properties of disordered GaN, including characterization of the physical structure of the films and their electronic energy levels, and also their photoconductive response. In particular I will focus on synchrotron radiation studies of samples with a range of different microstructures. X-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) provide particularly powerful tools for examining a sample's empty and filled electronic energy levels, respectively. The details of the absorption and emission processes make it possible to obtain atom-specific information and to investigate the symmetry of the electronic levels. An example of the information obtained is shown. The thin solid curve shows XAS data, which is a measure of the nitrogen /7-projected density of unfilled electronic states in this nanocrystalline GaN sample. The thick solid curve shows XES data from the same sample, which provides complementary information about the occupied valence band states. Although the spectral features are broader in fully amorphous films than in nanocrystalline samples, a well-defined band gap exists in both cases with magnitude similar to that of crystalline GaN. There are additional feature
-
Resonant x-ray emission from gas-phase TiCl{sub 4}
Energy Technology Data Exchange (ETDEWEB)
Hague, C.F.; Tronc, M. [Universite Pierre et Marie Curie, Paris (France); De Groot, F. [Univ. of Groningen (Netherlands)] [and others
1997-04-01
Resonant x-ray emission spectroscopy (RXES) has proved to be a powerful tool for studying the electronic structure of condensed matter. Over the past few years it has been used mainly for studying the valence bands of solids and condensed molecules. Very recently the advent of high brightness photon beams provided by third generation synchrotron radiation source undulators, associated with efficient x-ray emission spectrometers has made it possible to perform experiments on free diatomic molecular systems. RXE spectra of free molecules are of prime importance to gain insight into their electronic structure and bonding as they reflect the symmetry of orbitals engaged in the two-electron, two-step process with the l = 0, {+-}2 parity-conserving selection rule, and are free from solid state effects which can introduce difficulties in the interpretation. They provide information (more so than XAS) on the core excited states, and, when performed at fixed incident photon energy as a function of the emitted photon energy, on the electronic excitation (charge transfer, multiplet states). Moreover the anisotropy of the angular distribution of resonant x-ray emission affects the relative intensity of the emission peaks and provides information concerning the symmetries of final states. This is a preliminary report on what are the first RXE spectra of a 3d transition metal complex in the gas phase. The experiment concerns the Ti 3d {yields}2p emission spectrum of TiCl{sub 4} over the 450 to 470 eV region.
-
International Nuclear Information System (INIS)
Kang, San; Sharma, Rahul; Sim, Jae-Kwan; Lee, Cheul-Ro
2013-01-01
Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se 2 absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se 2 (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10 5 cm −1 for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS, and CGS thin films
-
Harb, Moussab
2014-01-01
We present a joint theoretical and experimental investigation of the optoelectronic properties of CuVO3, CuNbO3 and Cu 5Ta11O30 materials for potential photocatalytic and solar cell applications. In addition to the experimental results obtained by powder X-ray diffraction and UV-Vis spectroscopy of the materials synthesized under flowing N2 gas at atmospheric pressure via solid-state reactions, the electronic structure and the UV-Vis optical absorption coefficient of these compounds are predicted with high accuracy using advanced first-principles quantum methods based on DFT (including the perturbation theory approach DFPT) within the screened coulomb hybrid HSE06 exchange-correlation formalism. The calculated density of states are found to be in agreement with the UV-Vis diffuse reflectance spectra, predicting a small indirect band gap of 1.4 eV for CuVO3, a direct band gap of 2.6 eV for CuNbO3, and an indirect (direct) band gap of 2.1 (2.6) eV for Cu5Ta 11O30. It is confirmed that the Cu(i)-based multi-metal oxides possess a strong contribution of filled Cu(i) states in the valence band and of empty d0 metal states in the conduction band. Interestingly, CuVO3 with its predicted small indirect band gap of 1.4 eV shows the highest absorption coefficient in the visible range with a broad absorption edge extending to 886 nm. This novel result offers a great opportunity for this material to be an excellent candidate for solar cell applications. © the Partner Organisations 2014.
-
Fabrication and Characterization of Mg-Doped GaN Nanowires
International Nuclear Information System (INIS)
Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo
2008-01-01
Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)
-
SCUSS u- BAND EMISSION AS A STAR-FORMATION-RATE INDICATOR
Energy Technology Data Exchange (ETDEWEB)
Zhou, Zhimin; Zhou, Xu; Wu, Hong; Fan, Zhou; Jiang, Zhao-Ji; Ma, Jun; Nie, Jun-Dan; Wang, Jia-Li; Wu, Zhen-Yu; Zhang, Tian-Meng; Zou, Hu [Key Laboratory of Optical Astronomy, National Astronomical Observatories, Chinese Academy of Sciences, Beijing, 100012 (China); Fan, Xiao-Hui; Lesser, Michael [Steward Observatory, University of Arizona, Tucson, AZ 85721 (United States); Jing, Yi-Peng [Center for Astronomy and Astrophysics, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Li, Cheng; Shen, Shi-Yin [Shanghai Astronomical Observatory, Chinese Academy of Science, 80 Nandan Road, Shanghai 200030 (China); Jiang, Lin-Hua, E-mail: zmzhou@bao.ac.cn [Kavli Institute for Astronomy and Astrophysics, Peking University, Beijing 100871 (China)
2017-01-20
We present and analyze the possibility of using optical u- band luminosities to estimate star-formation rates (SFRs) of galaxies based on the data from the South Galactic Cap u band Sky Survey (SCUSS), which provides a deep u -band photometric survey covering about 5000 deg{sup 2} of the South Galactic Cap. Based on two samples of normal star-forming galaxies selected by the BPT diagram, we explore the correlations between u -band, H α , and IR luminosities by combing SCUSS data with the Sloan Digital Sky Survey and Wide-field Infrared Survey Explorer ( WISE ). The attenuation-corrected u -band luminosities are tightly correlated with the Balmer decrement-corrected H α luminosities with an rms scatter of ∼0.17 dex. The IR-corrected u luminosities are derived based on the correlations between the attenuation of u- band luminosities and WISE 12 (or 22) μ m luminosities, and then calibrated with the Balmer-corrected H α luminosities. The systematic residuals of these calibrations are tested against the physical properties over the ranges covered by our sample objects. We find that the best-fitting nonlinear relations are better than the linear ones and recommended to be applied in the measurement of SFRs. The systematic deviations mainly come from the pollution of old stellar population and the effect of dust extinction; therefore, a more detailed analysis is needed in future work.
-
X-ray photoelectron spectroscopy of high-temperature superconductor clean surfaces and interfaces
International Nuclear Information System (INIS)
Hill, D.M.
1989-01-01
X-ray photoelectron spectroscopy was used to determine the characteristic spectra for the high temperature superconductors La 1.85 Sr 0.15 CuO 4 , YBa 2 Cu 3 O 7-x , and Bi 2 Sr 2-x Ca 1+x Cu 2 O 8+y and their impurity phases. The oxidation state of Cu in all of these materials was predominantly Cu 2+ . The O 1s emission for clean surfaces was a single broad peak near 529 eV derived from emission from inequivalent O sites in the superconductors. The valence bands were a -6 eV wide manifold of Cu 3d-O 2p hybrid bands in the ∼ 1-7 eV binding energy range, with very low emission at E F arising from antibonding Cu 3d-O 2p orbitals. Emission from grain boundary and other impurity phases appeared at 531 eV for the O 1s core level, and in general ∼ 1-2 eV higher energy than the superconductor peak for other core levels except for Cu 2p. Impurity phases appeared in the valence bands as a shoulder at ∼ 5 eV. The amount of impurities detected was shown to be dependent on the fracture properties of the superconductors. All of the materials were shown to be stable under vacuum. The products and spatial extent of chemical reactions with Ag, Al, Al oxide, Au, Bi, Bi oxide, CaF 2 , Cu, Fe, Si, and Si oxide overlayers on these materials also were examined. Au, CaF 2 , and metal oxides deposited by activated oxidation during evaporation were non-reactive and non-disruptive of the superconductor surfaces. Ag overlayers were unique in that they disrupted the superconductor during deposition, but exhibited no evidence of any chemical reactions. Overlayers with an affinity for oxygen withdrew O from the superconductor. The O loss occurred preferentially from Cu atoms in the superconductor and disrupted the planar bonding structure
-
Energy Technology Data Exchange (ETDEWEB)
Shinnaka, Yoshiharu; Yasui, Chikako; Izumi, Natsuko [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Kawakita, Hideyo; Kondo, Sohei; Ikeda, Yuji; Kobayashi, Naoto; Hamano, Satoshi; Sameshima, Hiroaki; Fukue, Kei; Matsunaga, Noriyuki; Otsubo, Shogo; Takenaka, Keiichi; Watase, Ayaka; Kawanishi, Takafumi; Nakanishi, Kenshi; Nakaoka, Tetsuya [Laboratory of Infrared High-resolution Spectroscopy, Koyama Astronomical Observatory, Kyoto Sangyo University, Motoyama, Kamigamo, Kita-ku, Kyoto 603-8555 (Japan); Mizumoto, Misaki, E-mail: yoshiharu.shinnaka@nao.ac.jp, E-mail: kawakthd@cc.kyoto-su.ac.jp [Department of Astronomy, School of Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)
2017-08-01
Although high-resolution spectra of the CN red-system band are considered useful in cometary sciences, e.g., in the study of isotopic ratios of carbon and nitrogen in cometary volatiles, there have been few reports to date due to the lack of high-resolution ( R ≡ λ /Δ λ > 20,000) spectrographs in the near-infrared region around ∼1 μ m. Here, we present the high-resolution emission spectrum of the CN red-system band in comet C/2013 R1 (Lovejoy), acquired by the near-infrared high-resolution spectrograph WINERED mounted on the 1.3 m Araki telescope at the Koyama Astronomical Observatory, Kyoto, Japan. We applied our fluorescence excitation models for CN, based on modern spectroscopic studies, to the observed spectrum of comet C/2013 R1 (Lovejoy) to search for CN isotopologues ({sup 13}C{sup 14}N and {sup 12}C{sup 15}N). We used a CN fluorescence excitation model involving both a “pure” fluorescence excitation model for the outer coma and a “fully collisional” fluorescence excitation model for the inner coma region. Our emission model could reproduce the observed {sup 12}C{sup 14}N red-system band of comet C/2013 R1 (Lovejoy). The derived mixing ratio between the two excitation models was 0.94(+0.02/−0.03):0.06(+0.03/−0.02), corresponding to the radius of the collision-dominant region of ∼800–1600 km from the nucleus. No isotopologues were detected. The observed spectrum is consistent, within error, with previous estimates in comets of {sup 12}C/{sup 13}C (∼90) and {sup 14}N/{sup 15}N (∼150).
-
Cooperative emission in ion implanted Yb:YAG waveguides
Energy Technology Data Exchange (ETDEWEB)
Vazquez, G V; Desirena, H; De la Rosa, E [Centro de Investigaciones en Optica, Loma del Bosque 115, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico); Flores-Romero, E; Rickards, J; Trejo-Luna, R [Instituto de Fisica, UNAM, Apartado Postal 20364, 01000 Mexico, D. F. (Mexico); Marquez, H, E-mail: gvvazquez@cio.mx [Departamento de Optica, CICESE, Km 107 Carr. Tijuana-Ensenada, 22860 Ensenada, B. C. (Mexico)
2011-01-01
In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb{sup 3+} ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm{sup 3+} and Er{sup 3+} traces. The results include absorption and emission curves as well as decay time rates.
-
Cooperative emission in ion implanted Yb:YAG waveguides
International Nuclear Information System (INIS)
Vazquez, G V; Desirena, H; De la Rosa, E; Flores-Romero, E; Rickards, J; Trejo-Luna, R; Marquez, H
2011-01-01
In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb 3+ ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm 3+ and Er 3+ traces. The results include absorption and emission curves as well as decay time rates.
-
Whistler Triggered Upper Band Chorus Observed in Alaska
Hosseini, P.; Golkowski, M.
2017-12-01
VLF radiation from lightning discharges is one of several sources of energy injection into the inner magnetosphere from the Earth. Lightning discharges initially produce a broadband impulse or `sferic' but after propagation in the dispersive magnetosphere this waveform soon becomes quasi narrow band with the characteristic spectrographic form of the whistler. Most of the lightning induced VLF wave energy injected into the magnetosphere will be unducted with a k-vector which becomes increasingly oblique. Although unducted radiation is ubiquitous throughout the inner magnetosphere, it is generally of a low amplitude due to Landau damping and is not expected to produce strong nonlinear phenomena such as triggered emissions and chorus waves. However, VLF wave energy ducted or trapped in field-aligned plasma density enhancements can have relatively large amplitudes due to focusing and also linear cyclotron resonance growth. Therefore high amplitude ducted whistler waves can trigger a number of complex nonlinear phenomena. These include the triggering of VLF emissions and triggering of VLF hiss or chorus. Such phenomena are generally considered to result from nonlinear electron cyclotron phase trapping. Observation of such VLF emissions triggered by natural whistlers have been reported since the 1970s in Antarctica. We present observations of whistlers triggered upper band chorus emission from Alaska. Dispersion analyze of whistlers determine the L-shell range to be 4.5 clear frequency band gap between upper and lower band of the observed chorus emissions. The observations point to ducted chorus generation in the vicinity of the plasmapause boundary.
-
Kohlscheen, J.; Emirov, Y. N.; Beerbom, M. M.; Wolan, J. T.; Saddow, S. E.; Chung, G.; MacMillan, M. F.; Schlaf, R.
2003-09-01
The band lineup of p- and n-type 4H-SiC/Al interfaces was determined using x-ray photoemission spectroscopy (XPS). Al was deposited in situ on ex situ cleaned SiC substrates in several steps starting at 1.2 Å up to 238 Å nominal film thickness. Before growth and after each growth step, the sample surface was characterized in situ by XPS. The analysis of the spectral shifts indicated that during the initial deposition stages the Al films react with the ambient surface contamination layer present on the samples after insertion into vacuum. At higher coverage metallic Al clusters are formed. The band lineups were determined from the analysis of the core level peak shifts and the positions of the valence bands maxima (VBM) depending on the Al overlayer thickness. Shifts of the Si 2p and C 1s XPS core levels occurred to higher (lower) binding energy for the p-(n-)type substrates, which was attributed to the occurrence of band bending due to Fermi-level equilibration at the interface. The hole injection barrier at the p-type interface was determined to be 1.83±0.1 eV, while the n-type interface revealed an electron injection barrier of 0.98±0.1 eV. Due to the weak features in the SiC valence bands measured by XPS, the VBM positions were determined using the Si 2p peak positions. This procedure required the determination of the Si 2p-to-VBM binding energy difference (99.34 eV), which was obtained from additional measurements.
-
How Do The EV Project Participants Feel About Charging Their EV Away From Home?
Energy Technology Data Exchange (ETDEWEB)
Francfort, James E. [Idaho National Lab. (INL), Idaho Falls, ID (United States)
2015-02-01
The EV Project is an infrastructure study that enrolled over 8,000 residential participants. These participants purchased or leased a Nissan Leaf battery electric vehicle or Chevrolet Volt extended-range electric vehicle and were among the first to explore this new electric drive technology. Collectively, battery electric vehicles, extended-range electric vehicles, and plug-in hybrid electric vehicles are called PEVs. The EV Project participants were very cooperative and enthusiastic about their participation in the project and very supportive in providing feedback and information. The information and attitudes of these participants concerning their experience with their PEVs were solicited using a survey in June 2013. At that time, some had up to 3 years of experience with their PEVs.
-
Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.
2007-10-01
MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.
-
International Nuclear Information System (INIS)
Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.
2007-01-01
MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior
-
Planck 2013 results. XIV. Zodiacal emission
Ade, P A R; Armitage-Caplan, C.; Arnaud, M.; Ashdown, M.; Atrio-Barandela, F.; Aumont, J.; Baccigalupi, C.; Banday, A.J.; Barreiro, R.B.; Bartlett, J.G.; Battaner, E.; Benabed, K.; Benoit, A.; Benoit-Levy, A.; Bernard, J.P.; Bersanelli, M.; Bielewicz, P.; Bobin, J.; Bock, J.J.; Bonaldi, A.; Bond, J.R.; Borrill, J.; Bouchet, F.R.; Boulanger, F.; Bridges, M.; Bucher, M.; Burigana, C.; Butler, R.C.; Cardoso, J.F.; Catalano, A.; Chamballu, A.; Chary, R.-R.; Chen, X.; Chiang, L.Y.; Chiang, H.C.; Christensen, P.R.; Church, S.; Clements, D.L.; Colley, J.-M.; Colombi, S.; Colombo, L.P.L.; Couchot, F.; Coulais, A.; Crill, B.P.; Curto, A.; Cuttaia, F.; Danese, L.; Davies, R.D.; de Bernardis, P.; de Rosa, A.; de Zotti, G.; Delabrouille, J.; Delouis, J.M.; Desert, F.X.; Dickinson, C.; Diego, J.M.; Dole, H.; Donzelli, S.; Dore, O.; Douspis, M.; Dupac, X.; Efstathiou, G.; Ensslin, T.A.; Eriksen, H.K.; Finelli, F.; Forni, O.; Frailis, M.; Fraisse, A. A.; Franceschi, E.; Galeotta, S.; Ganga, K.; Giard, M.; Giraud-Heraud, Y.; Gonzalez-Nuevo, J.; Gorski, K.M.; Gratton, S.; Gregorio, A.; Gruppuso, A.; Hansen, F.K.; Hanson, D.; Harrison, D.; Helou, G.; Henrot-Versille, S.; Hernandez-Monteagudo, C.; Herranz, D.; Hildebrandt, S.R.; Hivon, E.; Hobson, M.; Holmes, W.A.; Hornstrup, A.; Hovest, W.; Huffenberger, K.M.; Jaffe, T.R.; Jaffe, A.H.; Jones, W.C.; Juvela, M.; Keihanen, E.; Keskitalo, R.; Kisner, T.S.; Kneissl, R.; Knoche, J.; Knox, L.; Kunz, M.; Kurki-Suonio, H.; Lagache, G.; Lahteenmaki, A.; Lamarre, J.M.; Lasenby, A.; Laureijs, R.J.; Lawrence, C.R.; Leonardi, R.; Lesgourgues, J.; Liguori, M.; Lilje, P.B.; Linden-Vornle, M.; Lopez-Caniego, M.; Lubin, P.M.; Macias-Perez, J.F.; Maffei, B.; Maino, D.; Mandolesi, N.; Maris, M.; Marshall, D.J.; Martin, P.G.; Martinez-Gonzalez, E.; Masi, S.; Massardi, M.; Matarrese, S.; Matthai, F.; Mazzotta, P.; Meinhold, P.R.; Melchiorri, A.; Mendes, L.; Mennella, A.; Migliaccio, M.; Mitra, S.; Miville-Deschenes, M.A.; Moneti, A.; Montier, L.; Morgante, G.; Mortlock, D.; Mottet, S.; Munshi, D.; Murphy, J. A.; Naselsky, P.; Nati, F.; Natoli, P.; Netterfield, C.B.; Norgaard-Nielsen, H.U.; Noviello, F.; Novikov, D.; Novikov, I.; Osborne, S.; O'Sullivan, C.; Oxborrow, C.A.; Paci, F.; Pagano, L.; Pajot, F.; Paladini, R.; Paoletti, D.; Pasian, F.; Patanchon, G.; Perdereau, O.; Perotto, L.; Perrotta, F.; Piacentini, F.; Piat, M.; Pierpaoli, E.; Pietrobon, D.; Plaszczynski, S.; Pointecouteau, E.; Polegre, A. M.; Polenta, G.; Ponthieu, N.; Popa, L.; Poutanen, T.; Pratt, G.W.; Prezeau, G.; Prunet, S.; Puget, J.L.; Rachen, J.P.; Reach, W.T.; Rebolo, R.; Reinecke, M.; Remazeilles, M.; Renault, C.; Ricciardi, S.; Riller, T.; Ristorcelli, I.; Rocha, G.; Rosset, C.; Roudier, G.; Rowan-Robinson, M.; Rusholme, B.; Sandri, M.; Santos, D.; Savini, G.; Scott, D.; Seiffert, M.D.; Shellard, E.P.S.; Smoot, G. F.; Spencer, L.D.; Starck, J.L.; Stolyarov, V.; Stompor, R.; Sudiwala, R.; Sureau, F.; Sutton, D.; Suur-Uski, A.S.; Sygnet, J.F.; Tauber, J.A.; Tavagnacco, D.; Terenzi, L.; Toffolatti, L.; Tomasi, M.; Tristram, M.; Tucci, M.; Tuovinen, J.; Umana, G.; Valenziano, L.; Valiviita, J.; Van Tent, B.; Vielva, P.; Villa, F.; Vittorio, N.; Wade, L.A.; Wandelt, B.D.; Yvon, D.; Zacchei, A.; Zonca, A.
2014-01-01
The Planck satellite provides a set of all-sky maps at nine frequencies from 30 GHz to 857 GHz. Planets, minor bodies, and diffuse interplanetary dust emission (IPD) are all observed. The IPD can be separated from Galactic and other emissions because Planck views a given point on the celestial sphere multiple times, through different columns of IPD. We use the Planck data to investigate the behaviour of zodiacal emission over the whole sky at sub-millimetre and millimetre wavelengths. We fit the Planck data to find the emissivities of the various components of the COBE zodiacal model -- a diffuse cloud, three asteroidal dust bands, a circumsolar ring, and an Earth-trailing feature. The emissivity of the diffuse cloud decreases with increasing wavelength, as expected from earlier analyses. The emissivities of the dust bands, however, decrease less rapidly, indicating that the properties of the grains in the bands are different from those in the diffuse cloud. We fit the small amount of Galactic emission seen t...
-
Band gap engineering of indium zinc oxide by nitrogen incorporation
Energy Technology Data Exchange (ETDEWEB)
Ortega, J.J., E-mail: jjosila@hotmail.com [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esq. Paseo la Bufa, Fracc. Progreso, C.P. 98060 Zacatecas (Mexico); Doctorado Institucional de Ingeniería y Ciencia de Materiales, Universidad Autónoma de San Luis Potosí, Av. Salvador Nava, Zona Universitaria, C.P. 78270 San Luis Potosí (Mexico); Aguilar-Frutis, M.A.; Alarcón, G. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Unidad Legaría, Calz. Legaría No. 694, Col. Irrigación, C.P. 11500 México D.F. (Mexico); Falcony, C. [Departamento de Física, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional campus Zacatenco, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, C.P. 07360 México D.F. (Mexico); and others
2014-09-15
Highlights: • IZON thin films were deposited by RF reactive sputtering at room temperature. • The effects of nitrogen on physical properties of IZO were analyzed. • Optical properties of IZON were studied by SE and UV–vis spectroscopy. • Adachi and classical parameters were quantitative and qualitatively congruent. • Nitrogen induces a gradual narrowing band gap from 3.5 to 2.5 eV on IZON films. - Abstract: The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N{sub 2}/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N{sub 2}/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10{sup −4} Ω cm with a carrier concentration of 5.1 × 10{sup 20} cm{sup −3}.
-
Band gap engineering of indium zinc oxide by nitrogen incorporation
International Nuclear Information System (INIS)
Ortega, J.J.; Aguilar-Frutis, M.A.; Alarcón, G.; Falcony, C.
2014-01-01
Highlights: • IZON thin films were deposited by RF reactive sputtering at room temperature. • The effects of nitrogen on physical properties of IZO were analyzed. • Optical properties of IZON were studied by SE and UV–vis spectroscopy. • Adachi and classical parameters were quantitative and qualitatively congruent. • Nitrogen induces a gradual narrowing band gap from 3.5 to 2.5 eV on IZON films. - Abstract: The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N 2 /Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N 2 /Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10 −4 Ω cm with a carrier concentration of 5.1 × 10 20 cm −3
-
DEFF Research Database (Denmark)
Duller, G.A.T.; Bøtter-Jensen, L.
1997-01-01
samples have been measured at various sample temperatures. A small but consistent shift of the peak emission wavelength to shorter wavelengths at higher temperatures is observed. However, the magnitude of this shift is sufficiently small that it will not affect measurements of the thermal activation...... energy. A systematic difference is observed between the thermal activation energies measured when using different emission wavelengths. In particular, the thermal activation energy of the emission at 400 nm is typically 0.11 eV, while that at 570 nm from the same samples is 0.03-0.05 eV. Several possible...
-
Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films
Directory of Open Access Journals (Sweden)
Martina Gilić
2017-06-01
Full Text Available Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K and UV-VIS spectroscopy (T = 300K. Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.
-
Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes
Directory of Open Access Journals (Sweden)
Si eLi
2015-02-01
Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.
-
Implementation of electronic crosstalk correction for terra MODIS PV LWIR bands
Geng, Xu; Madhavan, Sriharsha; Chen, Na; Xiong, Xiaoxiong
2015-09-01
The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the fleet of NASA's Earth Observing Systems (EOS) in space. Terra MODIS has completed 15 years of operation far exceeding its design lifetime of 6 years. The MODIS Level 1B (L1B) processing is the first in the process chain for deriving various higher level science products. These products are used mainly in understanding the geophysical changes occurring in the Earth's land, ocean, and atmosphere. The L1B code is designed to carefully calibrate the responses of all the detectors of the 36 spectral bands of MODIS and provide accurate L1B radiances (also reflectances in the case of Reflective Solar Bands). To fulfill this purpose, Look Up Tables (LUTs), that contain calibration coefficients derived from both on-board calibrators and Earth-view characterized responses, are used in the L1B processing. In this paper, we present the implementation mechanism of the electronic crosstalk correction in the Photo Voltaic (PV) Long Wave InfraRed (LWIR) bands (Bands 27-30). The crosstalk correction involves two vital components. First, a crosstalk correction modular is implemented in the L1B code to correct the on-board Blackbody and Earth-View (EV) digital number (dn) responses using a linear correction model. Second, the correction coefficients, derived from the EV observations, are supplied in the form of LUTs. Further, the LUTs contain time stamps reflecting to the change in the coefficients assessed using the Noise Equivalent difference Temperature (NEdT) trending. With the algorithms applied in the MODIS L1B processing it is demonstrated that these corrections indeed restore the radiometric balance for each of the affected bands and substantially reduce the striping noise in the processed images.
-
Study of GaN nanorods converted from β-Ga2O3
Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou
2018-05-01
We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.
-
The discovery of an O VII emission line in the ASCA spectrum of the Seyfert galaxy NGC 3783
George, I. M.; Turner, T. J.; Netzer, H.
1995-01-01
We report the first observation of an O VII 0.57 keV emission line in a Seyfert 1 galaxy. NGC 3783 was observed by ASCA twice over a period of 4 days in 1993 December. The source exhibited a approximately 30% change in intensity between the two observations, with most of the variability taking place as a result of steepening of the continuum less than or approximately equal to 1 keV. Spectra from both observations show intense absorption features in the 0.5-1.5 keV band, which can be well fitted by an ionized absorber model of solar composition, column density of 10(exp 22.2)/sq cm and ionization parameter of approximately 7-8; the strongest absorption features being due to O VII and O VIII. Two emission features are also seen in the spectra which we identify as O VII 0.57 keV (equivalent width approximately equals 36 eV) and O VIII 0.65 keV (equivalent width approximately equals 11 eV). We also show that the 3-6 keV continuum of the source is well fitted by a Gamma = 1.3-1.4 power-law continuum, a narrow neutral iron K-shell fluorescence line and a strong iron K-shell absorption edge, possibly corresponding to highly ionized iron.
-
Band gap engineering of BC2N for nanoelectronic applications
Lim, Wei Hong; Hamzah, Afiq; Ahmadi, Mohammad Taghi; Ismail, Razali
2017-12-01
The BC2N as an example of boron-carbon-nitride (BCN), has the analogous structure as the graphene and boron nitride. It is predicted to have controllable electronic properties. Therefore, the analytical study on the engineer-able band gap of the BC2N is carried out based on the schematic structure of BC2N. The Nearest Neighbour Tight Binding (NNTB) model is employed with the dispersion relation and the density of state (DOS) as the main band gap analysing parameter. The results show that the hopping integrals having the significant effect on the band gap, band structure and DOS of BC2N nanowire (BC2NNW) need to be taken into consideration. The presented model indicates consistent trends with the published computational results around the Dirac points with the extracted band gap of 0.12 eV. Also, it is distinguished that wide energy gap of boron nitride (BN) is successfully narrowed by this carbon doped material which assures the application of BC2N on the nanoelectronics and optoelectronics in the near future.
-
International Nuclear Information System (INIS)
Boyarchuk, K A; Karelin, A V; Shirokov, R V
2003-01-01
The outlook for using narrow-band spontaneous emission sources for purification of smoke gases from sulphur and nitrogen oxides is demonstrated by calculations based on a nonstationary kinetic model of the N 2 - O 2 - H 2 O - CO 2 - SO 2 mixture. The dependences of the mixture purification efficiency on the UV source power at different wavelengths, the exposure time, and the mixture temperature are calculated. It is shown that the radiation sources proposed in the paper will provide better purification of waste gases in the atmosphere. The most promising is a KrCl* lamp emitting an average power of no less than 100 W at 222 nm. (laser applications and other topics in quantum electronics)
-
Garber, Gary
2013-01-01
Filled with practical, step-by-step instructions and clear explanations for the most important and useful tasks. A concise guide full of step-by-step recipes to teach you how to build and program an advanced robot.""Instant LEGO Mindstorm EV3"" is for both the adult tinkerer who has never touched LEGO before and the experienced LEGO engineer who has evolved from Mindstorm NXT to EV3. If you are interested in entering or advising students in robot competitions such as the FIRST LEGO League, the Wold Robot Olympiad, or RoboGames, then this book is a must for you. Even if you haven't purchased yo
-
Comprehensive study of electronic polarizability and band gap of B2O3–Bi2O3–ZnO–SiO2 glass network
Directory of Open Access Journals (Sweden)
Iskandar Shahrim Mustafa
2017-10-01
Full Text Available Quaternary glasses were successfully fabricated using melt quenching technique based on the chemical compound composition (xBi2O3–(0.5−x ZnO–(0.2B2O3–(0.3SiO2, where (x=0.1, 0.2, 0.3, 0.4, 0.45 mole. The sources of SiO2 was produced from rice husk ash (RHA at 99.36% of SiO2. The Urbach energy was increased from 0.16eV to the 0.29eV as the mole of Bi2O3 increased in the glass structure. The indirect energy band gap is indicated in decrement pattern with 3.15eV towards 2.51eV. The results of Urbach energy and band gap energy that were obtained are due to the increment of Bi3+ ion in the glass network. The refractive indexes for the prepared glasses were evaluated at 2.36 to 2.54 based on the Lorentz–Lorentz formulation which correlated to the energy band gap. The calculated of molar polarizability, electronic polarizability and optical basicity exemplify fine complement to the Bi2O3 addition in the glass network. The glass sample was indicated in amorphous state.
-
Thiophene-fused tetracene diimide with low band gap and ambipolar behavior
Ye, Qun; Chang, Jingjing; Huang, Kuo-Wei; Chi, Chunyan
2011-01-01
The first tetracene diimide derivative fused with four thiophene rings, TT-TDI, was synthesized by an FeCl3 mediated oxidative cyclodehydrogenation reaction. TT-TDI exhibited a low band gap of 1.52 eV and amphoteric redox behavior. TT-TDI also showed a liquid crystalline property and ambipolar charge transport in thin film field-effect transistors. © 2011 American Chemical Society.
-
Thiophene-fused tetracene diimide with low band gap and ambipolar behavior
Ye, Qun
2011-11-18
The first tetracene diimide derivative fused with four thiophene rings, TT-TDI, was synthesized by an FeCl3 mediated oxidative cyclodehydrogenation reaction. TT-TDI exhibited a low band gap of 1.52 eV and amphoteric redox behavior. TT-TDI also showed a liquid crystalline property and ambipolar charge transport in thin film field-effect transistors. © 2011 American Chemical Society.
-
ELVIS: Comparing Electric and Conventional Vehicle Energy Consumption and CO2 Emissions
DEFF Research Database (Denmark)
Andersen, Ove; Krogh, Benjamin Bjerre; Torp, Kristian
2017-01-01
Making the transition from conventional combustion vehicles (CVs) to electric vehicles (EVs) requires the users to be comfortable with the limited range of EVs. We present a system named ELVIS that enables a direct comparison of energy/fuel consumption, CO2 emissions, and travel-time between CVs...
-
Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity
International Nuclear Information System (INIS)
Nelson, A.J.
1995-01-01
Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics
-
Directory of Open Access Journals (Sweden)
W. Z. Liu
2011-06-01
Full Text Available Single crystalline ZnO nanowires were fabricated on Si (100 substrates by catalyst-free high-pressure pulsed laser deposition. It is found that the nanowires start to form when the substrate temperature and growth pressure exceed the critical values of 700 oC and 700 Pa, and their size strongly depends on these growth conditions. That is, the aspect ratio of the nanowires decreases with increasing temperature or decreasing pressure. Such a size dependence on growth conditions was discussed in terms of surface migration and scattering of ablated atoms. Room-temperature photoluminescence spectrum of ZnO nanowires shows a dominant near-band-edge emission peak at 3.28 eV and a visible emission band centered at 2.39 eV. Temperature-dependent photoluminescence studies reveal that the former consists of the acceptor-bound exciton and free exciton emissions; while the latter varies in intensity with the aspect ratio of the nanowires and is attributed to the surface-mediated deep level emission.
-
Auroral nitric oxide concentration and infrared emission
Reidy, W. P.; Degges, T. C.; Hurd, A. G.; Stair, A. T., Jr.; Ulwick, J. C.
1982-05-01
Rocket-borne measurements of infrared auroral emission by nitric oxide are analyzed. Four rocket flights provided opportunities to measure 5.3- and 2.7-micron NO emission by means of infrared fixed band radiometers and CVF spectrometers, narrow band photometers, and incident energy spectra on various occasions. Analysis of infrared emission profiles and electron flux data indicates the NO density to be significantly enhanced with respect to midlatitude values. NO emission in the fundamental 5.3-micron band is attributed to resonance excitation by warm earth radiation, collisional excitation primarily by O atoms and chemiluminescence from the reaction of N with O2; with an energy efficiency of 0.015. The overtone band emission at 2.7 microns is accounted for by chemiluminescence produced with an energy efficiency of 0.0054. Total photon yield for the chemiluminescence reaction is estimated to range from 1.2 to 2.4 vibrational quanta per NO molecule.
-
Deep donor-acceptor pair recombination in bulk GaP studied by ODMR and DLTS techniques
International Nuclear Information System (INIS)
Awadelkarim, O.O.; Godlewski, M.; Monemar, B.
1989-01-01
Deep level transient spectroscopy (DLTS) and optically detected magnetic resonance (ODMR) are applied to study deep defect levels with photoluminescence bands observed in the near infrared region in S- and Te-doped bulk GaP crystals grown by the liquid encapsulated Czochralski method. The ODMR data suggest that the emission bands with maxima observed at 8000-8200 A (∼ 1.5 eV), common to both materials, and at 7750 A (1.6 eV), present only in GaP:Te, are due to donor-acceptor pair recombinations. The latter band, reported here for the first time, is tentatively associated with deep states observed by DLTS. (author) 19 refs., 5 figs
-
Smart EV Energy Management System to Support Grid Services
Wang, Bin
Under smart grid scenarios, the advanced sensing and metering technologies have been applied to the legacy power grid to improve the system observability and the real-time situational awareness. Meanwhile, there is increasing amount of distributed energy resources (DERs), such as renewable generations, electric vehicles (EVs) and battery energy storage system (BESS), etc., being integrated into the power system. However, the integration of EVs, which can be modeled as controllable mobile energy devices, brings both challenges and opportunities to the grid planning and energy management, due to the intermittency of renewable generation, uncertainties of EV driver behaviors, etc. This dissertation aims to solve the real-time EV energy management problem in order to improve the overall grid efficiency, reliability and economics, using online and predictive optimization strategies. Most of the previous research on EV energy management strategies and algorithms are based on simplified models with unrealistic assumptions that the EV charging behaviors are perfectly known or following known distributions, such as the arriving time, leaving time and energy consumption values, etc. These approaches fail to obtain the optimal solutions in real-time because of the system uncertainties. Moreover, there is lack of data-driven strategy that performs online and predictive scheduling for EV charging behaviors under microgrid scenarios. Therefore, we develop an online predictive EV scheduling framework, considering uncertainties of renewable generation, building load and EV driver behaviors, etc., based on real-world data. A kernel-based estimator is developed to predict the charging session parameters in real-time with improved estimation accuracy. The efficacy of various optimization strategies that are supported by this framework, including valley-filling, cost reduction, event-based control, etc., has been demonstrated. In addition, the existing simulation-based approaches do
-
Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires
Directory of Open Access Journals (Sweden)
E. Karageorgou
2014-11-01
Full Text Available SnO2 and Sn:In2O3 nanowires were grown on Si(001, and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.
-
Directory of Open Access Journals (Sweden)
Carla Bianca Luena Victorio
Full Text Available Since its identification in 1969, Enterovirus 71 (EV71 has been causing periodic outbreaks of infection in children worldwide and most prominently in the Asia-Pacific Region. Understanding the pathogenesis of Enterovirus 71 (EV71 is hampered by the virus's inability to infect small animals and replicate in their derived in vitro cultured cells. This manuscript describes the phenotypic and genotypic characteristics of two selected EV71 strains (EV71:TLLm and EV71:TLLmv, which have been adapted to replicate in mouse-derived NIH/3T3 cells, in contrast to the original parental virus which is only able to replicate in primate cell lines. The EV71:TLLm strain exhibited productive infection in all primate and rodent cell lines tested, while EV71:TLLmv exhibited greater preference for mouse cell lines. EV71:TLLmv displayed higher degree of adaptation and temperature adaptability in NIH/3T3 cells than in Vero cells, suggesting much higher fitness in NIH/3T3 cells. In comparison with the parental EV71:BS strain, the adapted strains accumulated multiple adaptive mutations in the genome resulting in amino acid substitutions, most notably in the capsid-encoding region (P1 and viral RNA-dependent RNA polymerase (3D. Two mutations, E167D and L169F, were mapped to the VP1 canyon that binds the SCARB2 receptor on host cells. Another two mutations, S135T and K140I, were located in the VP2 neutralization epitope spanning amino acids 136-150. This is the first report of human EV71 with the ability to productively infect rodent cell lines in vitro.
-
X-ray photoelectron spectroscopy and luminescent properties of Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor
Energy Technology Data Exchange (ETDEWEB)
Jafer, R.M. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 South Africa (South Africa); Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, Postal Code 11115 Omdurman (Sudan); Coetsee, E., E-mail: CoetseeE@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 South Africa (South Africa); Yousif, A. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 South Africa (South Africa); Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, Postal Code 11115 Omdurman (Sudan); Kroon, R.E.; Ntwaeaborwa, O.M.; Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 South Africa (South Africa)
2015-03-30
Highlights: • XPS results for high Bi concentration indicated the Bi 4f peaks inside the Y 3d energy range. • XPS also indicated the C{sub 2} and S{sub 6} sites in both Y{sub 2}O{sub 3} and Bi{sub 2}O{sub 3} that results in blue and green luminescence centers. • The false-color CL overlay results also proved the emission of the Bi{sup 3+} ion in the two different sites. - Abstract: X-ray photoelectron spectroscopy (XPS) results provided proof for the blue and green emission of Bi{sup 3+} in the Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor. The Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor was successfully prepared by the combustion process during the investigation of down-conversion materials for Si solar cell application. The X-ray diffraction (XRD) patterns indicated that a single-phase cubic crystal structure with the Ia3 space group was formed. X-ray photoelectron spectroscopy (XPS) showed that the Bi{sup 3+} ion replaces the Y{sup 3+} ion in two different coordination sites in the Y{sub 2}O{sub 3} crystal structure. The O 1s peak shows five peaks, two which correlate with the O{sup 2−} ion in Y{sub 2}O{sub 3} in the two different sites, two which correlate with O{sup 2−} in Bi{sub 2}O{sub 3} in the two different sites and the remaining peak relates to hydroxide. The Y 3d spectrum shows two peaks for the Y{sup 3+} ion in the Y{sub 2}O{sub 3} structure in two different sites and the Bi 4f spectrum shows the Bi{sup 3+} ion in the two different sites in Bi{sub 2}O{sub 3}. The photoluminescence (PL) results showed three broad emission bands in the blue and green regions under ultraviolet excitation, which were also present for panchromatic cathodoluminescence (CL) results. These three peaks have maxima at ∼3.4, 3.0 and 2.5 eV. The PL emission ∼3.0 eV (blue emission) showed two excitation bands centered at ∼3.7 and 3.4 eV while the PL emission at ∼2.5 eV (green emission) showed a broad excitation band from ∼4 to 3.4 eV. The panchromatic CL images were obtained
-
Band gap modification and ferroelectric properties of Bi0.5(Na,K0.5TiO3-based by Li substitution
Directory of Open Access Journals (Sweden)
Ngo Duc Quan
2014-01-01
Full Text Available We report on the reduction of band gap in Bi0.5(Na0.82-xLixK0.180.5(Ti0.95Sn0.05O3 from 2.99 eV to 2.84 eV due to the substitutions of Li+ ions to Na+ sites. In addition, the lithium substitution samples exhibit an increasing of the maximal polarizations from 21.8 to 25.7 μC/cm2. The polarization enhancement of ferroelectric and reduction of the band gaps are strongly related to the Li substitution concentration as evaluated via the electronegative between A-site and oxygen and tolerance factor. The results are promising for photovoltaic and photocatalytic applications.
-
International Nuclear Information System (INIS)
Yang, S.Y.; Man, B.Y.; Liu, M.; Chen, C.S.; Gao, X.G.; Wang, C.C.; Hu, B.
2011-01-01
Zn 1-x Co x O thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn 1-x Co x O thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V O and Zn i (V O Zn i ). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V O Zn i slightly decreased as substrate temperature increased.
-
Luminescence and excited state dynamics in Bi{sup 3+}-doped LiLaP{sub 4}O{sub 12} phosphates
Energy Technology Data Exchange (ETDEWEB)
Babin, V. [Institute of Physics AS CR, Cukrovarnicka 10, 16200 Prague (Czech Republic); Chernenko, K., E-mail: nuclearphys@yandex.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Peter the Great Saint-Petersburg Polytechnic University, Polytekhnicheskaya 29, 195251 St.Petersburg (Russian Federation); Demchenko, P. [Ivan Franko National University of Lviv, Kyryla i Mefodiya 8a, 79005 Lviv (Ukraine); Mihokova, E.; Nikl, M. [Institute of Physics AS CR, Cukrovarnicka 10, 16200 Prague (Czech Republic); Pashuk, I. [Ivan Franko National University of Lviv, Kyryla i Mefodiya 8a, 79005 Lviv (Ukraine); Shalapska, T. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Voloshinovskii, A. [Ivan Franko National University of Lviv, Kyryla i Mefodiya 8a, 79005 Lviv (Ukraine); Zazubovich, S. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia)
2016-08-15
Photo- and X-ray-excited luminescence characteristics of Bi-doped LiLaP{sub 4}O{sub 12} phosphates with different bismuth contents (from 1 to 25 at% in the melt) are investigated in the 4.2–300 K temperature range and compared with the characteristics of the undoped LiLaP{sub 4}O{sub 12} phosphate. The broad 2.95 eV emission band of LiLaP{sub 4}O{sub 12}:Bi excited around 5.4 eV is found to arise from the bismuth dopant. Relatively large FWHM and Stokes shift of the emission band and especially the data on the low-temperature decay kinetics of the 2.95 eV emission and its temperature dependence, indicating a very small spin-orbit splitting energy of the corresponding excited state, allow the conclusion that this emission arises from the radiative decay of the triplet state of an exciton localized around a Bi{sup 3+} ion. No spectral bands are observed, arising from the electron transitions between the energy levels of Bi{sup 3+} ions. Phenomenological model is proposed for the description of the excited state dynamics of the Bi{sup 3+}-related localized exciton in LiLaP{sub 4}O{sub 12}:Bi and the parameters of the triplet localized exciton state are determined. Keywords: Photoluminescence; Time-resolved spectroscopy; Excited states; Bi{sup 3+} centers; LiLaP{sub 4}O{sub 12}:Bi powders.
-
ICT Solutions to Support EV Deployment
DEFF Research Database (Denmark)
Pedersen, Anders Bro; Andersen, Peter Bach; Skov Johansen, Joachim
2013-01-01
Numerous studies and projects have proven that the electric vehicle can offer value and services that go beyond its function as a means of transportation. The value and services can, for instance, be the reduction of charging costs, adherence to grid constraints, or adjustment of charging behavior...... utilization concepts for EVs and be harmonized to obtain interoperability among numerous electric vehicle (EV) and electric vehicle supply equipment from original equipment manufacturers. This chapter describes contemporary Smart Grid communication methods in terms of requirements and specific solutions...
-
Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang
2017-10-01
Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.
-
PROBING THE FLARE ATMOSPHERES OF M DWARFS USING INFRARED EMISSION LINES
Energy Technology Data Exchange (ETDEWEB)
Schmidt, Sarah J.; Kowalski, Adam F.; Hawley, Suzanne L.; Hilton, Eric J.; Wisniewski, John P.; Tofflemire, Benjamin M., E-mail: sjschmidt@astro.washington.edu [Dominion Astrophysical Observatory, Herzberg Institute of Astrophysics, National Research Council of Canada (Canada)
2012-01-20
We present the results of a campaign to monitor active M dwarfs using infrared spectroscopy, supplemented with optical photometry and spectroscopy. We detected 16 flares during nearly 50 hr of observations on EV Lac, AD Leo, YZ CMi, and VB 8. The three most energetic flares also showed infrared emission, including the first reported detections of P{beta}, P{gamma}, He I {lambda}10830, and Br{gamma} during an M dwarf flare. The strongest flare ({Delta}u = 4.02 on EV Lac) showed emission from H{gamma}, H{delta}, He I {lambda}4471, and Ca II K in the UV/blue and P{beta}, P{gamma}, P{delta}, Br{gamma}, and He I {lambda}10830 in the infrared. The weaker flares ({Delta}u = 1.68 on EV Lac and {Delta}U = 1.38 on YZ CMi) were only observed with photometry and infrared spectroscopy; both showed emission from P{beta}, P{gamma}, and He I {lambda}10830. The strongest infrared emission line, P{beta}, occurred in the active mid-M dwarfs with a duty cycle of {approx}3%-4%. To examine the most energetic flare, we used the static NLTE radiative transfer code RH to produce model spectra based on a suite of one-dimensional model atmospheres. Using a hotter chromosphere than previous one-dimensional atmospheric models, we obtain line ratios that match most of the observed emission lines.
-
Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.
Knutson, Jeremy L; Martin, James D; Mitzi, David B
2005-06-27
Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.
-
Potential Analysis of Electric Vehicle (EV) Grid Integration
DEFF Research Database (Denmark)
Wu, Qiuwei; Nielsen, Arne Hejde; Østergaard, Jacob
2011-01-01
Electric vehicles (EVs) have been considered as distributed energy resources (DER) to handle the fluctuation from renewable energy resources (RES), especially the wind power. The intelligent management of EV charging and discharging can achieve the goal of providing up and down regulating power...
-
Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling
DEFF Research Database (Denmark)
Mazzola, Federico; Wells, Justin; Yakimova, Rosita
2013-01-01
Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the band...... of graphene that has a binding energy of more than 3:5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of states. The existence of the effect suggests a very weak coupling...
-
Inherited MST1 deficiency underlies susceptibility to EV-HPV infections.
Directory of Open Access Journals (Sweden)
Amandine Crequer
Full Text Available Epidermodysplasia verruciformis (EV is characterized by persistent cutaneous lesions caused by a specific group of related human papillomavirus genotypes (EV-HPVs in otherwise healthy individuals. Autosomal recessive (AR EVER1 and EVER2 deficiencies account for two thirds of known cases of EV. AR RHOH deficiency has recently been described in two siblings with EV-HPV infections as well as other infectious and tumoral manifestations. We report here the whole-exome based discovery of AR MST1 deficiency in a 19-year-old patient with a T-cell deficiency associated with EV-HPV, bacterial and fungal infections. MST1 deficiency has recently been described in seven patients from three unrelated kindreds with profound T-cell deficiency and various viral and bacterial infections. The patient was also homozygous for a rare ERCC3 variation. Our findings broaden the clinical range of infections seen in MST1 deficiency and provide a new genetic etiology of susceptibility to EV-HPV infections. Together with the recent discovery of RHOH deficiency, they suggest that T cells are involved in the control of EV-HPVs, at least in some individuals.
-
Radiative recombination in doped indium phosphide crystals
International Nuclear Information System (INIS)
Negreskul, V.V.; Russu, E.V.; Radautsan, S.I.; Cheban, A.G.; AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki)
1975-01-01
Photoluminiscence spectra of nondoped n-InP and their change upon doping with silicon, cadmium, zinc and copper impurities were studied. The shortest wave band at 1.41 eV is connected with radiative electron transition from a shallow donor level (probably silicon) to valent zone, while the band with maximum at 1.37 - 1.39 eV is due to radiative electron transition to an acceptor level whose energy depends upon the nature and concentration of impurity implanted. The luminescence of Light-doped p-InP crystals enables to estimate the ionization energies of acceptor levels in cadmium (Esub(a)=0.043 eV) and zinc (Esub(a)=0.027 eV). Energies of acceptor levels (0.22 and 0.40 eV) due to copper impurity are determined. Intensity of edge emission in the specimens light-doped with silicon is higher than in the nondoped n-InP crystals
-
Wurtzite gallium phosphide has a direct-band gap
Assali, S.; Zardo, I.; Plissard, S.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.
2013-01-01
Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong
-
International Nuclear Information System (INIS)
Babin, V.; Gorbenko, V.; Makhov, A.; Mares, J.A.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.
2007-01-01
At 4.2-350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics were studied under excitation in the 2.5-15 eV energy range for the undoped and Ce 3+ -doped Lu 3 Al 5 O 12 (LuAG) single-crystalline films grown by liquid phase epitaxy method from the PbO-based flux. The spectral bands arising from the single Pb 2+ -based centres were identified. The processes of energy transfer from the host lattice to Pb 2+ and Ce 3+ ions and from Pb 2+ to Ce 3+ ions were investigated. Competition between Pb 2+ and Ce 3+ ions in the processes of energy transfer from the LuAG crystal lattice was evidenced especially in the exciton absorption region. Due to overlap of the 3.61 eV emission band of Pb 2+ centres with the 3.6 eV absorption band of Ce 3+ centres, an effective nonradiative energy transfer from Pb 2+ ions to Ce 3+ ions takes place, resulting in the appearance of slower component in the luminescence decay kinetics of Ce 3+ centres and decrease of the Ce 3+ -related luminescence intensity
-
Investigation of the Band Structure of Graphene-Based Plasmonic Photonic Crystals.
Qiu, Pingping; Qiu, Weibin; Lin, Zhili; Chen, Houbo; Tang, Yixin; Wang, Jia-Xian; Kan, Qiang; Pan, Jiao-Qing
2016-09-09
In this paper, one-dimensional (1D) and two-dimensional (2D) graphene-based plasmonic photonic crystals (PhCs) are proposed. The band structures and density of states (DOS) have been numerically investigated. Photonic band gaps (PBGs) are found in both 1D and 2D PhCs. Meanwhile, graphene-based plasmonic PhC nanocavity with resonant frequency around 175 THz, is realized by introducing point defect, where the chemical potential is from 0.085 to 0.25 eV, in a 2D PhC. Also, the bending wvaguide and the beam splitter are realized by introducing the line defect into the 2D PhC.
-
Properties of the Variation of the Infrared Emission of OH/IR Stars I. The K Band Light Curves
Directory of Open Access Journals (Sweden)
Kyung-Won Suh
2009-09-01
Full Text Available To study properties of the variation of the infrared emission of OH/IR stars, we collect and analyze the infrared observational data in K band for nine OH/IR stars. We use the observational data obtained for about three decades including recent data from the two micron all sky survey (2MASS and the deep near infrared survey of the southern sky (DENIS. We use Marquardt-Levenberg algorithm to determine the pulsation period and amplitude for each star and compare them with previous results of infrared and radio investigations.
-
DEFF Research Database (Denmark)
Svane, Axel; Christensen, Niels Egede; Gorczyca, I.
2010-01-01
on the basis of the local approximation to density functional theory, although generally overestimated by 0.2–0.3 eV in comparison with experimental gap values. Details of the electronic energies and the effective masses including their pressure dependence are compared with available experimental information....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....
-
International Nuclear Information System (INIS)
Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.
2014-01-01
Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap
-
Energy Technology Data Exchange (ETDEWEB)
Schuette, A.
2001-07-01
The annual report of the Fachagentur Nachwachsende Rohstoffe e.V. outlines the state of the art and the boundary conditions of energy plant utilisation. The organisational struture of the association and its research projects are presented. [German] Der Jahresbericht der Fachagentur Nachwachsende Rohstoffe e.V. stellt Stand der Technik und Rahmenbedingungen fuer die Verwendung von Energiepflanzen dar. Die Organisation des Vereins sowie die gefoerderten Forschungsprojekte werden vorgestellt.
-
Energy Technology Data Exchange (ETDEWEB)
Kang, San; Sharma, Rahul; Sim, Jae-Kwan [Semiconductor Materials Processing Laboratory, School of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Processing Laboratory, School of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Jeonju 561-756 (Korea, Republic of)
2013-06-25
Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se{sub 2} absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se{sub 2} (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10{sup 5} cm{sup −1} for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS
-
Planck 2013 results. XIV. Zodiacal emission
DEFF Research Database (Denmark)
Ade, P. A. R.; Aghanim, N.; Armitage-Caplan, C.
2013-01-01
, three asteroidal dust bands, a circumsolar ring, and an Earth-trailing feature. The emissivity of the diuse cloud decreases with increasing wavelength, as expected from earlier analyses. The emissivities of the dust bands, however, decrease less rapidly, indicating that the properties of the grains......The Planck satellite provides a set of all-sky maps at nine frequencies from 30 GHz to 857 GHz. Planets, minor bodies, and diuse interplanetary dust emission (IPD) are all observed. The IPD can be separated from Galactic and other emissions because Planck views a given point on the celestial sphere...
-
Thiel, Charles Warren
There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence
-
Immunological Evaluation and Comparison of Different EV71 Vaccine Candidates
Directory of Open Access Journals (Sweden)
Ai-Hsiang Chou
2012-01-01
Full Text Available Enterovirus 71 (EV71 and coxsackievirus A16 (CVA16 are major causative agents of hand, foot, and mouth diseases (HFMDs, and EV71 is now recognized as an emerging neurotropic virus in Asia. Effective medications and/or prophylactic vaccines against HFMD are not available. The current results from mouse immunogenicity studies using in-house standardized RD cell virus neutralization assays indicate that (1 VP1 peptide (residues 211–225 formulated with Freund’s adjuvant (CFA/IFA elicited low virus neutralizing antibody response (1/32 titer; (2 recombinant virus-like particles produced from baculovirus formulated with CFA/IFA could elicit good virus neutralization titer (1/160; (3 individual recombinant EV71 antigens (VP1, VP2, and VP3 formulated with CFA/IFA, only VP1 elicited antibody response with 1/128 virus neutralization titer; and (4 the formalin-inactivated EV71 formulated in alum elicited antibodies that cross-neutralized different EV71 genotypes (1/640, but failed to neutralize CVA16. In contrast, rabbits antisera could cross-neutralize strongly against different genotypes of EV71 but weakly against CVA16, with average titers 1/6400 and 1/32, respectively. The VP1 amino acid sequence dissimilarity between CVA16 and EV71 could partially explain why mouse antibodies failed to cross-neutralize CVA16. Therefore, the best formulation for producing cost-effective HFMD vaccine is a combination of formalin-inactivated EV71 and CAV16 virions.
-
On a possible origin of the 2.87 eV optical transition in GaNP
International Nuclear Information System (INIS)
Buyanova, I A; Izadifard, M; Chen, W M; Xin, H P; Tu, C W
2006-01-01
Temperature dependent photoluminescence excitation spectroscopy is employed to evaluate basic physical properties of the 2.87 eV absorption peak, recently discovered for the GaN x P 1-x alloys. Whereas the appearance of this transition is found to be facilitated by incorporation of N and also H atoms, its intensity does not scale with the N content in the alloys. This questions the possible association of this feature with an N-related localized state. On the basis of the results of temperature dependent measurements, it is concluded that the state involved has a non-Γ character. Excitation of the known N-related localized states via this state is found to be non-selective, unlike that between the N-related centres. The observed properties are shown to be barely consistent with those predicted for the higher lying localized state of the isolated N atom derived from the Γ conduction band minimum (CBM). Alternative explanations for the '2.87 eV' state as being due to either a t 2 component of the X 3 c (or L 1 c ) CBM or a level arising from a complex of N and H (in some form) are also discussed
-
Energy Technology Data Exchange (ETDEWEB)
Junay, A.; Guézo, S., E-mail: sophie.guezo@univ-rennes1.fr; Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F. [Département Matériaux-Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex (France)
2015-08-28
We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.
-
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
2018-06-01
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
-
Directory of Open Access Journals (Sweden)
F. L. Freitas
2016-08-01
Full Text Available We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal AlxGayIn1–x–yN semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.
-
Energy Technology Data Exchange (ETDEWEB)
Freitas, F. L., E-mail: felipelopesfreitas@gmail.com; Marques, M.; Teles, L. K. [Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, SP (Brazil)
2016-08-15
We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal Al{sub x}Ga{sub y}In{sub 1–x–y}N semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.
-
Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.
Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian; Alsalman, Hussain; Munoz, Nini; Schutter, Brian; Spencer, Michael G
2014-08-13
The electrical properties of multilayer MoS2/graphene heterojunction transistors are investigated. Temperature-dependent I-V measurements indicate the concentration of unintentional donors in exfoliated MoS2 to be 3.57 × 10(11) cm(-2), while the ionized donor concentration is determined as 3.61 × 10(10) cm(-2). The temperature-dependent measurements also reveal two dominant donor levels, one at 0.27 eV below the conduction band and another located at 0.05 eV below the conduction band. The I-V characteristics are asymmetric with drain bias voltage and dependent on the junction used for the source or drain contact. I-V characteristics of the device are consistent with a long channel one-dimensional field-effect transistor model with Schottky contact. Utilizing devices, which have both graphene/MoS2 and Ti/MoS2 contacts, the Schottky barrier heights of both interfaces are measured. The charge transport mechanism in both junctions was determined to be either thermionic-field emission or field emission depending on bias voltage and temperature. On the basis of a thermionic field emission model, the barrier height at the graphene/MoS2 interface was determined to be 0.23 eV, while the barrier height at the Ti/MoS2 interface was 0.40 eV. The value of Ti/MoS2 barrier is higher than previously reported values, which did not include the effects of thermionic field emission.
-
International Nuclear Information System (INIS)
Liu, J. W.; Liao, M. Y.; Cheng, S. H.; Imura, M.; Koide, Y.
2013-01-01
CaF 2 films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF 2 /H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF 2 /H-diamond heterointerface. Valence and conductance band offsets of the CaF 2 /H-diamond heterojunciton are determined to be 3.7 ± 0.2 and 0.3 ± 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF 2 /H-diamond heterojunciton for the development of high power and high frequency field effect transistors.
-
ΔI=4 bifurcation in a superdeformed band: Evidence for a C4 symmetry
International Nuclear Information System (INIS)
Flibotte, S.; Andrews, H.R.; Ball, G.C.; Beausang, C.W.; Beck, F.A.; Belier, G.; Byrski, T.; Curien, D.; Dagnall, P.J.; de France, G.; Disdier, D.; Duchene, G.; Finck, C.; Haas, B.; Hackman, G.; Haslip, D.S.; Janzen, V.P.; Kharraja, B.; Lisle, J.C.; Merdinger, J.C.; Mullins, S.M.; Nazarewicz, W.; Radford, D.C.; Rauch, V.; Savajols, H.; Styczen, J.; Theisen, C.; Twin, P.J.; Vivien, J.P.; Waddington, J.C.; Ward, D.; Zuber, K.; Aberg, S.
1993-01-01
The moment of inertia of the yrast superdeformed band in 149 Gd exhibits an unexpected bifurcation at high rotational frequency. States differing by four units of angular momentum show an energy shift of about 60 eV. This indicates the remnant of a new quantum number associated with the fourfold rotational symmetry
-
VUV spectroscopy of pure LiCaAlF6 crystals
International Nuclear Information System (INIS)
Kirm, M.; True, M.; Vielhauer, S.; Zimmerer, G.; Shiran, N.V.; Shpinkov, I.; Spassky, D.; Shimamura, K.; Ichinose, N.
2005-01-01
Reflection, excitation and luminescence spectra of as-grown and X-ray irradiated high-purity LiCaAlF 6 crystals were studied in the temperature range of 10-300 K using synchrotron radiation in VUV. The intrinsic luminescence of samples at 10 K consists of a non-elementary broad band with maximum at 4.4 eV under excitation at 11.45 eV. It is ascribed to the radiative decay of self-trapped excitons. The energy gap is estimated to be 12.65 eV in LiCaAlF 6 . Under interband excitation a red shift of luminescence was observed. The electron-hole recombination leads to the emission peaking at 3.7 eV. The excitation processes and origin of overlapping emissions of LiCaAlF 6 are discussed
-
Electron emission during multicharged ion-metal surface interactions
International Nuclear Information System (INIS)
Zeijlmans van Emmichoven, P.A.; Havener, C.C.; Hughes, I.G.; Overbury, S.H.; Robinson, M.T.; Zehner, D.M.; Meyer, F.W.
1992-01-01
The electron emission during multicharged ion-metal surface interactions will be discussed. The interactions lead to the emission of a significant number of electrons. Most of these electrons have energies below 30 eV. For incident ions with innershell vacancies the emission of Auger electrons that fill these vacancies has been found to occur mainly below the surface. We will present recently measured electron energy distributions which will be used to discuss the mechanisms that lead to the emission of Auger and of low-energy electrons
-
Optimal Operation of EVs and HPs in the Nordic Power System
DEFF Research Database (Denmark)
Liu, Zhaoxi
penetration level in the market environment. • The feasibility investigation of EVs and HPs to provide frequency reserves to the Nordic power system. To accomplish the researches mentioned above, the driving patterns of the vehicles in the Nordic region and the impacts of the EV and HP demand on the day...... that both EVs and HPs can provide considerable frequency reserves to the power system along the day in the Nordic region. Vehicle-to-Grid (V2G) technologies which enable the EVs to discharge the batteries in the reserve operations can further utilize the capacity of the EVs and consequently increase...
-
Studies on the synthesis of cubic ZnS quantum dots, capping and optical–electrical characteristics
International Nuclear Information System (INIS)
Saravanan, R. Sakthi Sudar; Pukazhselvan, D.; Mahadevan, C.K.
2012-01-01
Highlights: ► Zinc acetate and sodium sulphide as reactants. Cubic QDs of size ∼3 nm in 1:3 reactant ratios with or without capping agent. ► At least 30 times smaller size while using microwave source instead of conventional heating source. ► Widening of band gap from 3.6 eV to 3.94 eV by reducing size of ZnS. ► Better conduction with lower activation energy in wide band gap ZnS. ► Thermionic emission mechanism for conduction phenomenon. - Abstract: This paper presents a comparative analysis of ZnS QDs synthesized by conventional and microwave heating techniques using zinc acetate and sodium sulphide reactants. The size of the quantum dots achieved by the latter technique (∼3 nm) is at least 30 times smaller than the former technique. Incorporation of excess Na 2 S and microwave treatment are the important factors responsible for controlling the size of ZnS nanocrystals. Furthermore, the distribution of quantum dots is highly influenced by the addition of small amount of NaOH. The UV–vis analysis reveals that the band gap can be widened up to 3.94 eV (correspond to ∼3 nm ZnS) from 3.67 eV (correspond to bulk ZnS). Surprisingly better conductivity is observed for the widest band gap ZnS of the present study; this could be due to defects/vacancies present in the system and its influence in the band structure. The higher conductivity value is supported by the smaller activation energy value, smaller dielectric constant and higher dielectric loss, etc. The conduction is further explained by thermionic emission mechanism.
-
Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films
Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang
2018-04-01
In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.
-
Energy Technology Data Exchange (ETDEWEB)
King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)
2014-09-21
In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.
-
Wang, Limin; Cao, Bingfei; Kang, Wei; Hybertsen, Mark; Maeda, Kazuhiko; Domen, Kazunari; Khalifah, Peter G
2013-08-19
Two new metal oxide semiconductors belonging to the Ag-Bi-M-O (M = Nb, Ta) chemical systems have been synthesized as candidate compounds for driving overall water splitting with visible light on the basis of cosubstitution of Ag and Bi on the A-site position of known Ca2M2O7 pyrochlores. The low-valence band edge energies of typical oxide semiconductors prevents direct water splitting in compounds with band gaps below 3.0 eV, a limitation which these compounds are designed to overcome through the incorporation of low-lying Ag 4d(10) and Bi 6s(2) states into compounds of nominal composition "AgBiM2O7". It was found that the "AgBiTa2O7" pyrochlores are in fact a solid solution with an approximate range of Ag(x)Bi(5/6)Ta2O(6.25+x/2) with 0.5 semiconductors with the onset of strong direct absorption at 2.72 and 2.96 eV, respectively. Electronic structure calculations for an ordered AgBiNb2O7 structure show that the band gap reduction and the elevation of the valence band primarily result from hybridized Ag d(10)-O 2p orbitals that lie at higher energy than the normal O 2p states in typical pyrochlore oxides. While the minimum energy gap is direct in the band structure, the lowest energy dipole allowed optical transitions start about 0.2 eV higher in energy than the minimum energy transition and involve different bands. This suggests that the minimum electronic band gap in these materials is slightly smaller than the onset energy for strong absorption in the optical measurements. The elevated valence band energies of the niobate and tantalate compounds are experimentally confirmed by the ability of these compounds to reduce 2 H(+) to H2 gas when illuminated after functionalization with a Pt cocatalyst.
-
Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5–8.5 eV
Directory of Open Access Journals (Sweden)
C. Sturm
2015-10-01
Full Text Available The dielectric tensor of Ga2O3 in the monoclinic (β phase was determined by generalized spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5 eV as well as by density functional theory calculations combined with many-body perturbation theory including quasiparticle and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are assigned to the corresponding valence bands. It is shown that the off-diagonal element of the dielectric tensor reaches values up to |εxz| ≈ 0.30 and cannot be neglected. Even in the transparent spectral range where it is quite small (|εxz| < 0.02 it causes a rotation of the dielectric axes around the symmetry axis of up to 20°.
-
Optical conductivity of Ni1 − xPtx alloys (0
Directory of Open Access Journals (Sweden)
Lina S. Abdallah
2014-01-01
Full Text Available Using spectroscopic ellipsometry and Drude-Lorentz oscillator fitting, we determined the dielectric function and optical conductivity versus photon energy from 0.76 to 6.6 eV of 10 nm thick Ni1 − xPtx alloy (0
-
Driving Pattern Analysis for Electric Vehicle (EV) Grid Integration Study
DEFF Research Database (Denmark)
Wu, Qiuwei; Nielsen, Arne Hejde; Østergaard, Jacob
2010-01-01
In order to facilitate the integration of electric vehicles (EVs) into the Danish power system, the driving data in Denmark were analyzed to extract the information of driving distances and driving time periods which were used to represent the driving requirements and the EV unavailability...... from the driving time periods to show how many cars are available for charging and discharging in each time period. The obtained EV availability data are in one hour time periods and one quarter time periods for different study purposes. The EV availability data of one hour time period are to be used...
-
International Nuclear Information System (INIS)
Yangui, A.; Pillet, S.; Mlayah, A.; Lusson, A.; Bouchez, G.; Boukheddaden, K.; Triki, S.; Abid, Y.
2015-01-01
Optical and structural properties of the organic-inorganic hybrid perovskite-type (C 6 H 11 NH 3 ) 2 [PbI 4 ] (abbreviated as C 6 PbI 4 ) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C 6 PbI 4 , revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ∼138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI 6 octahedron. The resulting incommensurate spatial modulation of the Pb–I distances (and Pb–I–Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ∼130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with targeted properties
-
Energy Technology Data Exchange (ETDEWEB)
Yangui, A. [Groupe d’Etudes de la Matière Condensée, UMR CNRS 8653-Université de Versailles Saint Quentin En Yvelines, 45 Avenue des Etats-Unis, 78035 Versailles (France); Laboratoire de Physique Appliquée, Faculté des Sciences de Sfax, Route de Soukra km 3.5 BP 1171, 3018 Sfax (Tunisia); Pillet, S. [Laboratoire de Cristallographie, Résonance Magnétique et Modélisations, UMR-CNRS 7036, Institut Jean Barriol, Université de Lorraine, BP 239, 54506 Vandoeuvre-lès-Nancy (France); Mlayah, A. [Centre d’Elaboration de Matériaux et d’Etudes Structurales (CEMES), CNRS UPR 8011-Université de Toulouse, 29 rue Jeanne Marvig 31055, Toulouse, Cedex 4 (France); Lusson, A.; Bouchez, G.; Boukheddaden, K., E-mail: Younes.abid@fss.rnu.tn, E-mail: kbo@physique.uvsq.fr [Groupe d’Etudes de la Matière Condensée, UMR CNRS 8653-Université de Versailles Saint Quentin En Yvelines, 45 Avenue des Etats-Unis, 78035 Versailles (France); Triki, S. [Laboratoire de Chimie, Electrochimie Moléculaires, Chimie Analytique, UMR CNRS 6521-Université de Bretagne Occidentale, BP 809, 29285 Brest (France); Abid, Y., E-mail: Younes.abid@fss.rnu.tn, E-mail: kbo@physique.uvsq.fr [Laboratoire de Physique Appliquée, Faculté des Sciences de Sfax, Route de Soukra km 3.5 BP 1171, 3018 Sfax (Tunisia)
2015-12-14
Optical and structural properties of the organic-inorganic hybrid perovskite-type (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] (abbreviated as C{sub 6}PbI{sub 4}) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C{sub 6}PbI{sub 4}, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ∼138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI{sub 6} octahedron. The resulting incommensurate spatial modulation of the Pb–I distances (and Pb–I–Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ∼130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with
-
Yangui, A.; Pillet, S.; Mlayah, A.; Lusson, A.; Bouchez, G.; Triki, S.; Abid, Y.; Boukheddaden, K.
2015-12-01
Optical and structural properties of the organic-inorganic hybrid perovskite-type (C6H11NH3)2[PbI4] (abbreviated as C6PbI4) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C6PbI4, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ˜138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI6 octahedron. The resulting incommensurate spatial modulation of the Pb-I distances (and Pb-I-Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ˜130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with targeted properties.
-
Proceedings of the EV2010 electric vehicles conference and trade show
Energy Technology Data Exchange (ETDEWEB)
Elwood, M. [Electric Mobility Canada, Mississauga, ON (Canada); Dubois-Phillips, M. [BC Hydro, Vancouver, BC (Canada)] (comps.)
2010-07-01
This conference provided a forum to address the challenges facing the adoption of electric vehicles (EV) in Canada. Topics of discussions ranged from the Canadian public's levels of awareness of EVs, motivators to adoption of EVs and barriers to broader acceptance and market diffusion of EVs. Five sessions related to vehicle technologies focused on vehicles and their components, energy storage, power management, testing and operating conditions. Three sessions on infrastructure and other readiness measures, focused on grid capacity and impacts, charging infrastructure and the vehicle/grid interface. Four sessions on public policies and institutional changes focused on how EVs are a critical pathway to address peak oil and greenhouse gases, and that public policy is needed to support adoption of the technology. Four sessions on commercialization and environmental impacts focused on market forecasts, the need for EVs and on business models used by EV manufacturers to promote the technology and explain the environmental benefits. The conference featured 65 presentations, of which 20 have been catalogued separately for inclusion in this database. refs., tabs., figs.
-
Optimal Coordinated EV Charging with Reactive Power Support in Constrained Distribution Grids
Energy Technology Data Exchange (ETDEWEB)
Paudyal, Sumit; Ceylan, Oğuzhan; Bhattarai, Bishnu P.; Myers, Kurt S.
2017-07-01
Electric vehicle (EV) charging/discharging can take place in any P-Q quadrants, which means EVs could support reactive power to the grid while charging the battery. In controlled charging schemes, distribution system operator (DSO) coordinates with the charging of EV fleets to ensure grid’s operating constraints are not violated. In fact, this refers to DSO setting upper bounds on power limits for EV charging. In this work, we demonstrate that if EVs inject reactive power into the grid while charging, DSO could issue higher upper bounds on the active power limits for the EVs for the same set of grid constraints. We demonstrate the concept in an 33-node test feeder with 1,500 EVs. Case studies show that in constrained distribution grids in coordinated charging, average costs of EV charging could be reduced if the charging takes place in the fourth P-Q quadrant compared to charging with unity power factor.
-
Energy Technology Data Exchange (ETDEWEB)
Bertaina, M., E-mail: bertaina@to.infn.it [Department of Physics, University of Torino and INFN, Torino (Italy); Apel, W.D. [Institut für Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Arteaga-Velázquez, J.C. [Institute of Physics and Mathematics, Universidad Michoacana de San Nicolas de Hidalgo, Morelia (Mexico); Bekk, K. [Institut für Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Blümer, J. [Institut für Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Institut für Experimentelle Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Bozdog, H. [Institut für Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Brancus, I.M. [Horia Hulubei National Institute of Physics and Nuclear Engineering, Bucharest (Romania); Cantoni, E. [Department of Physics, University of Torino and INFN, Torino (Italy); Osservatorio Astrofisico di Torino, INAF Torino (Italy); Chiavassa, A. [Department of Physics, University of Torino and INFN, Torino (Italy); Cossavella, F. [Institut für Experimentelle Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Daumiller, K. [Institut für Kernphysik, KIT – Karlsruher Institut für Technologie (Germany); Souza, V. de [Universidade São Paulo, Instituto de Física de São Carlos (Brazil); and others
2014-11-15
The shape and composition of the primary spectrum of cosmic rays are key elements to understand the origin, acceleration and propagation of the Galactic cosmic rays. Besides the well known knee and ankle features, the recent results of KASCADE-Grande indicate that the measured energy spectrum exhibits also a less pronounced but still clear deviation from a single power law between the knee and the ankle, with a spectral hardening at 2 × 10{sup 16} eV and a steepening at 10{sup 17} eV. The average mass composition gets heavier after the knee till 10{sup 17} eV where a bending of the heavy component is observed. An indication of a hardening of the light component just above 10{sup 17} eV has been measured as well. In this paper the major results obtained so far by the KASCADE-Grande experiment are reviewed.
-
Surface Resonance Bands on (001)W: Experimental Dispersion Relations
DEFF Research Database (Denmark)
Willis, R. F.; Feuerbacher, B.; Christensen, N. Egede
1977-01-01
A band of unbound surface states (resonances), located in an energy region above the vacuum threshold corresponding to an energy band gap in the electron states of the bulk crystal, has been observed by angle-resolved secondary-electron-emission spectroscopy. The experimental dispersion behavior...... is in agreement with the two-dimensional band structure of a clean (001)W surface recently proposed by Smith and Mittheiss....
-
Energy Technology Data Exchange (ETDEWEB)
Isik, Mehmet, E-mail: mehmet.isik@atilim.edu.tr [Department of Electrical and Electronics Engineering, Atilim University, 06836, Ankara (Turkey); Gasanly, Nizami [Department of Physics, Middle East Technical University, 06800, Ankara (Turkey); Virtual International Scientific Research Centre, Baku State University, 1148, Baku (Azerbaijan)
2017-04-01
Transmission and reflection measurements on GaS{sub x}Se{sub 1−x} mixed crystals (0 ≤ x ≤ 1) were carried out in the 400–1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive indices of the mixed crystals were plotted using the reflectance spectra. It was observed that refractive index decreases nearly in a linear behavior with increasing band gap energy for GaS{sub x}Se{sub 1−x} mixed crystals. Moreover, the composition ratio of the mixed crystals was obtained from the energy dispersive spectroscopy measurements. The atomic compositions of the studied crystals are well-matched with composition x increasing from 0 to 1 by intervals of 0.25. - Highlights: • Transmission and reflection experiments were performed on GaS{sub x}Se{sub 1−x} mixed crystals. • Derivative spectra of transmittance and reflectance were used for analyses. • Compositional dependence of band gap energy and refractive index were reported.
-
Cosmic rays from 1017eV to beyond 1020eV: evidence from the fly's eye experiment and ground arrays.
Sokolsky, P.
The study of cosmic rays with energies well above the knee (1015eV) of the spectrum has a long history. Beginning with the pioneering work of Linsley and the Volcano Ranch array, followed by the SUGAR, Haverah Park, Yakutsk, Akeno and AGASA array and the Fly's Eye detector, evidence has been steadily accumulating that the spectrum exhibits a change in slope near 10×1018eV. This flattening may indicate that the spectrum in this region is largely extragalactic in origin. If the sources of this spectrum are sufficiently distant, a cut-off due to the interaction of near 1020eV protons with black body photons should be observed. Recent data from the AGASA and Fly's Eye detectors have brought to bear information of spectral shape, composition and anisotropy to this study. In addition to clarifying the nature of the spectral structure, these new results lead to the surprising conclusion that nearby cosmic ray sources must exist that produce particles with energies well in excess of 1020eV. New experiments are being designed which will have the enormous apertures necessary for detecting these very rare events.
-
International Nuclear Information System (INIS)
Ekpunobi, A.J.
2005-01-01
A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg x Cd 1-x Te interface in the s 2 p 2 configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point
-
Variability of OH(3-1) and OH(6-2) emission altitude and volume emission rate from 2003 to 2011
Teiser, Georg; von Savigny, Christian
2017-08-01
In this study we report on variability in emission rate and centroid emission altitude of the OH(3-1) and OH(6-2) Meinel bands in the terrestrial nightglow based on spaceborne nightglow measurements with the SCIAMACHY (SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY) instrument on the Envisat satellite. The SCIAMACHY observations cover the time period from August 2002 to April 2012 and the nighttime observations used in this study are performed at 10:00 p.m. local solar time. Characterizing variability in OH emission altitude - particularly potential long-term variations - is important for an appropriate interpretation of ground-based OH rotational temperature measurements, because simultaneous observations of the vertical OH volume emission rate profile are usually not available for these measurements. OH emission altitude and vertically integrated emission rate time series with daily resolution for the OH(3-1) band and monthly resolution for the OH(6-2) band were analyzed using a standard multilinear regression approach allowing for seasonal variations, QBO-effects (Quasi-Biennial Oscillation), solar cycle (SC) variability and a linear long-term trend. The analysis focuses on low latitudes, where SCIAMACHY nighttime observations are available all year. The dominant sources of variability for both OH emission rate and altitude are the semi-annual and annual variations, with emission rate and altitude being highly anti-correlated. There is some evidence for a 11-year solar cycle signature in the vertically integrated emission rate and in the centroid emission altitude of both the OH(3-1) and OH(6-2) bands.
-
Luminescence spectroscopy of Rb2KTiOF5 oxyfluoride single crystals
Kozlov, A. V.; Pustovarov, V. A.; Sarychev, M. N.; Isaenko, L. I.
2017-09-01
Spectra of photoluminescence (PL) and X-ray excited luminescence (XRL) in region of 1.5-5.5 eV, PL excitation spectra using synchrotron radiation (3.7-22 eV), time-resolved impulse cathode-luminescence (ICL) spectra, the temperature depending of the XRL, decay kinetics as well as thermoluminescence curves were measured for single crystals Rb2KTiOF5, a promising nonlinear optical material. Single crystals are transparent in microwave, visible and near UV range, inter-band transition energy is Eg = 4.2 eV. Crystalline structure has two disordered mixed position O/F, phase transition in the region of 215 K. All the obtained results indicate that in luminescence spectra nonelementary band 2.2 eV is connected to the emission of self-trapped excitons. Nonelementary band 2.2 eV associated with the presence local distortion in the octahedron TiOF5. It is observed that at interband excitation in VUV region at energies more than 3.5 Eg the effect of multiplication of electronic excitations appears. That determines the high output of XRL and ICL. Luminescence methods of quality control of grown crystals are proposed.
-
International Nuclear Information System (INIS)
Ibach, T.
1983-11-01
For the analysis of the emission and deceleration mechanisms of ionisation-electrons (delta-electrons) during the passage of fast ions through gases, the radial density distribution of the light emission has been measured, which is related with the (0,0)-transitions of two optical bands in nitrogen. These measurements have been made using a small aperture limited ion beam. The first band under study is the 2. positive system at 337.1 nm excited mainly by low energy electrons around 20 eV, and the second band is the 1. negative system at 391.4 nm excited by fast electrons with simultaneous ionisation. For these measurements an experimental setup has been developed with a telescope-like optical system and interference filters to detect the emitted light with a high spacial resolution (4x10 -4 of profile width) and a high dynamic range (10 6 ). The experiments have been performed using proton beams of different energies between 270 keV and 2.8 MeV, He-3 beams with 270 keV/u and 500 keV/u and a Ne beam with 270 keV/u with gas pressures in the range between 0.133 to 13.3 mbar. Based on the method of Abel inversion the spacial light emission density is deduced from the experimental distance functions and normalized to a gas density of 1 g/cm 3 . The results show that approximately half of the total light emission in the 1. negative system and the ionisation is caused by the primary interaction of the ion beam. For the same energy per nucleon this contribution decreases relative to the contribution of the delta-electrons with increasing atomic number. In addition the delta-radiation becomes harder with increasing atomic number. Good agreement is obtained by comparison with the results of other authors, which are based on probe techniques and Monte-Carlo-calculations. (orig./HP) [de
-
A first principle study of band structure of III-nitride compounds
Energy Technology Data Exchange (ETDEWEB)
Ahmed, Rashid [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)]. E-mail: rasofi@hotmail.com; Akbarzadeh, H. [Department of Physics, Isfahan University of Technology, 841546 Isfahan (Iran, Islamic Republic of); Fazal-e-Aleem [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)
2005-12-15
The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data.
-
Development of a Control Banding Tool for Nanomaterials
Riediker, M.; Ostiguy, C.; Triolet, J.; Troisfontaine, P.; Vernez, D.; Bourdel, G.; Thieriet, N.; Cadène, A.
2012-01-01
Control banding (CB) can be a useful tool for managing the potential risks of nanomaterials. The here proposed CB, which should be part of an overall risk control strategy, groups materials by hazard and emission potential. The resulting decision matrix proposes control bands adapted to the risk potential levels and helps define an action plan. If this plan is not practical and financially feasible, a full risk assessment is launched. The hazard banding combines key concepts of nanomaterial t...
-
Ziaei, Vafa; Bredow, Thomas
2017-06-01
We study the impact of dynamical electron-phonon (el-ph) effects on the electronic band gap of ice and liquid water by accounting for frequency-dependent Fan contributions in the el-ph mediated self-energy within the many-body perturbation theory (MBPT). We find that the dynamical el-ph coupling effects greatly reduce the static el-ph band-gap correction of the hydrogen-rich molecular ice crystal from-2.46 to -0.23 eV in great contrast to the result of Monserrat et al. [Phys. Rev. B 92, 140302 (2015), 10.1103/PhysRevB.92.140302]. This is of particular importance as otherwise the static el-ph gap correction would considerably reduce the electronic band gap, leading to considerable underestimation of the intense peaks of optical absorption spectra of ice which would be in great disagreement to experimental references. By contrast, the static el-ph gap correction of liquid water is very moderate (-0.32 eV), and inclusion of dynamical effects slightly reduces the gap correction to -0.19 eV. Further, we determine the diverse sensitivity of ice and liquid water to the G W self-consistency and show that the energy-only self-consistent approach (GnWn ) exhibits large implicit vertex character in comparison to the quasiparticle self-consistent approach, for which an explicit calculation of vertex corrections is necessary for good agreement with experiment.
-
Energy distributions of atoms sputtered from alkali halides by 540 eV electrons, Ch.1
International Nuclear Information System (INIS)
Overeijnder, H.; Szymonski, M.; Haring, A.; Vries, A.E. de
1978-01-01
The emission of halogen and alkali atoms, occurring under bombardment of alkali halides with electrons has been investigated. The electron energy was 540 eV and the temperature of the target was varied between room temperature and 400 0 C. The energy distribution of the emitted neutral particles was measured with a time of flight method. It was found that either diffusing interstitial halogen atoms or moving holes dominate the sputtering process above 200 0 C. Below 150 0 C alkali halides with lattice parameters s/d >= 0.33 show emission of non-thermal halogen atoms. s is the interionic space between two halogen ions in a direction and d is the diameter of a halogen atom. In general the energy distribution of the alkali and halogen atoms is thermal above 200 0 C, but not Maxwellian. (Auth.)
-
High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.
Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J
2014-06-11
The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.
-
DEFF Research Database (Denmark)
Hu, Xiaolian; Zuo, Lijian; Fu, Weifei
2012-01-01
To increase the open circuit voltage (VOC) of polymer solar cells based on diketopyrrolopyrrole (DPP) containing polymers, the weakly electron-withdrawing thiophene-3,4-dicarboxylate unit was introduced into the polymer backbone. Two ester group functionalized DPP containing polymers, PCTDPP...... with a random structure and PDCTDPP with a regular structure, were designed and synthesized by the Stille coupling reaction. The resulting copolymers exhibit broad and strong absorption bands from 350 to 1000 nm with low optical band gaps below 1.40 eV. Through cyclic voltammetry measurements, it is found...
-
Energy Technology Data Exchange (ETDEWEB)
Klump, K N; Lassettre, E N
1977-10-01
Generalized oscillator strengths, f, for the transition A/sup 1/B/sub 2u/ reverse arrow X/sup 1/A/sub 1g/ in benzene, determined by electron impact methods, are reported as a function of the momentum change. At scattering angles down to 2.5/sup 0/ helium was used as the comparison gas. Determinations are also reported at theta = 0/sup 0/ using mercury as the comparison gas. The oscillator strength curve has both a minimum and a maximum due to the superposition of electric dipole and octupole transitions. The band envelope is studied and is shown to remain unchanged in shape but is shifted by h nu/sub 6/ approximately 0.065 eV with increasing angle due to the shift from electric dipole to octupole scattering.
-
Energy Technology Data Exchange (ETDEWEB)
Fabbri, Filippo; Rossi, Francesca; Attolini, Giovanni; Salviati, Giancarlo; Iannotta, Salvatore [IMEM-CNR Institute, Viale Usberti 37/A, I-43124 Parma (Italy); Aversa, Lucrezia; Verucchi, Roberto; Nardi, Marco [IFN-CNR Institute, Via alla Cascata 56/C-Povo, I-38123 Trento (Italy); Fukata, Naoki [International Center for Materials Nanoarchitectonics, National Institute for Materials Science and PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Dierre, Benjamin; Sekiguchi, Takashi [Nano Device Characterization Group, Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
2010-08-27
We report the influence of the native amorphous SiO{sub 2} shell on the cathodoluminescence emission of 3C-SiC/SiO{sub 2} core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO{sub 2} and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO{sub 2}-SiC interface properties is also reported.
-
Adopting Strategic Niche Management to Evaluate EV Demonstration Projects in China
Directory of Open Access Journals (Sweden)
Yixi Xue
2016-02-01
Full Text Available Electric Vehicles (EVs are considered to be a potential viable technology to address the persistent unsustainable problems in transport sector. In this paper, we focus on analyzing the transition processes of EVs in China because the sustainability of developing countries is essential for the worldwide sustainability. The two-round demonstration programs of EVs in China were analyzed by adopting the strategic niche management (SNM approach so as to find out what niche protection has been provided and which obstacles hamper the further development of EVs. The results show that the financial subsidy is the most important protective measure. However, the diffusion results of EVs in different pilot cities are greatly different. The main reason lies in the uneven geographical landscape. In addition, some obstacles were exposed during the niche internal processes including low quality of expectations and poor alignment within the network. Based on the analysis results, we develop a list of suggestions that are important to consider when developing EVs.