SEMATECH EUVL mask program status

Science.gov (United States)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been

Status of EUVL mask development in Europe (Invited Paper)

Science.gov (United States)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

Negative-tone imaging with EUV exposure toward 13nm hp

Science.gov (United States)

Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Yamamoto, Kei; Goto, Takahiro

2016-03-01

Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using a specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm2. Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm2 to 24 mJ/cm2. On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photo-acid generator (PAG) and polymer. Conventional EUV absorber comprises of organic compounds is

Method for the manufacture of phase shifting masks for EUV lithography

Science.gov (United States)

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

2006-04-04

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Challenges of anamorphic high-NA lithography and mask making

Science.gov (United States)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10

Metal Oxide Nanoparticle Photoresists for EUV Patterning

KAUST Repository

Jiang, Jing

2014-01-01

© 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

International Nuclear Information System (INIS)

Brose, S.; Danylyuk, S.; Juschkin, L.; Dittberner, C.; Bergmann, K.; Moers, J.; Panaitov, G.; Trellenkamp, St.; Loosen, P.; Grützmacher, D.

2012-01-01

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm). The masks and filters with free standing areas up to 1000 × 1000 μm 2 and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. - Highlights: ► Broadband transmission masks for EUV proximity and interference lithography. ► Technology for free standing niobium membranes with areas up to 1 mm 2 . ► High density patterns with periods of 100 nm and structure sizes below 40 nm. ► Measured diffraction efficiency at 11 nm is in agreement with the theory. ► Produced masks can be effectively used with wavelengths between 6 nm and 17 nm.

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Science.gov (United States)

van Setten, Eelco; Bottiglieri, Gerardo; de Winter, Laurens; McNamara, John; Rusu, Paul; Lubkoll, Jan; Rispens, Gijsbert; van Schoot, Jan; Neumann, Jens Timo; Roesch, Matthias; Kneer, Bernhard

2017-10-01

To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore's law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non

Imaging and Patterning on Nanometer Scale Using Coherent EUV Light

International Nuclear Information System (INIS)

Wachulak, P.W.; Fiedorowicz, H.; Bartnik, A.; Marconi, M.C.; Menoni, C.S.; Rocca, J.J.

2010-01-01

Extreme ultraviolet (EUV) covers wavelength range from about 5 nm to 50 nm. That is why EUV is especially applicable for imaging and patterning on nanometer scale length. In the paper periodic nanopatterning realized by interference lithography and high resolution holographic nanoimaging performed in a Gabor in-line scheme are presented. In the experiments a compact table top EUV laser was used. Preliminary studies on using a laser plasma EUV source for nanoimaging are presented as well. (author)

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

Science.gov (United States)

Buitrago, Elizabeth; Fallica, Roberto; Fan, Daniel; Karim, Waiz; Vockenhuber, Michaela; van Bokhoven, Jeroen A.; Ekinci, Yasin

2016-09-01

Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

Mask Materials and Designs for Extreme Ultra Violet Lithography

Science.gov (United States)

Kim, Jung Sik; Ahn, Jinho

2018-03-01

Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

e-beam induced EUV photomask repair: a perfect match

Science.gov (United States)

Waiblinger, M.; Kornilov, K.; Hofmann, T.; Edinger, K.

2010-05-01

Due to the updated ITRS roadmap EUV might enter the market as a productive solution for the 32 nm node1. Since the EUV-photomask is used as mirror and no longer as transitive device the severity of different defect types has changed significantly. Furthermore the EUV-photomask material stack is much more complex than the conventional 193nm photomask materials which expand the field of critical defect types even further. In this paper we will show, that "classical" 193 mask repair processes cannot be applied to EUV material. We will show the performance of a new repair process based on the novel ebeam repair tool MeRiT® HR 32. Furthermore this process will be applied on real EUV mask defects and the success of these repairs confirmed by wafer prints.

Metal Oxide Nanoparticle Photoresists for EUV Patterning

KAUST Repository

Jiang, Jing; Chakrabarty, Souvik; Yu, Mufei; Ober, Christopher K.

2014-01-01

© 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

Science.gov (United States)

Thibaut, Sophie; Raley, Angélique; Lazarrino, Frederic; Mao, Ming; De Simone, Danilo; Piumi, Daniele; Barla, Kathy; Ko, Akiteru; Metz, Andrew; Kumar, Kaushik; Biolsi, Peter

2018-04-01

The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost but retain their inherent variability and process complexity. EUV lithography offers a much desired path that allows for direct print of line and space at 36nm pitch and below and effectively addresses issues like cycle time, intra-level overlay and mask count costs associated with multi-patterning. However it also brings its own sets of challenges. One of the major barrier to high volume manufacturing implementation has been hitting the 250W power exposure required for adequate throughput [1]. Enabling patterning using a lower dose resist could help move us closer to the HVM throughput targets assuming required performance for roughness and pattern transfer can be met. As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.

Masks for extreme ultraviolet lithography

International Nuclear Information System (INIS)

Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

1998-01-01

In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

KAUST Repository

Kryask, Marie

2013-01-01

Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.

Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

KAUST Repository

Jiang, Jing; Zhang, Ben; Yu, Mufei; Li, Li; Neisser, Mark; Sung Chun, Jun; Giannelis, Emmanuel P.; Ober, Christopher K.

2015-01-01

© 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.

Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

International Nuclear Information System (INIS)

Cardinale, G. F.; Henderson, C. C.; Goldsmith, J. E. M.; Mangat, P. J. S.; Cobb, J.; Hector, S. D.

1999-01-01

In two separate experiments, we have successfully demonstrated the transfer of dense- and loose-pitch line/space (L/S) photoresist features, patterned with extreme ultraviolet (EUV) lithography, into an underlying hard mask material. In both experiments, a deep-UV photoresist (∼90 nm thick) was spin cast in bilayer format onto a hard mask (50-90 nm thick) and was subsequently exposed to EUV radiation using a 10x reduction EUV exposure system. The EUV reticle was fabricated at Motorola (Tempe, AZ) using a subtractive process with Ta-based absorbers on Mo/Si multilayer mask blanks. In the first set of experiments, following the EUV exposures, the L/S patterns were transferred first into a SiO 2 hard mask (60 nm thick) using a reactive ion etch (RIE), and then into polysilicon (350 nm thick) using a triode-coupled plasma RIE etcher at the University of California, Berkeley, microfabrication facilities. The latter etch process, which produced steep (>85 degree sign ) sidewalls, employed a HBr/Cl chemistry with a large (>10:1) etch selectivity of polysilicon to silicon dioxide. In the second set of experiments, hard mask films of SiON (50 nm thick) and SiO 2 (87 nm thick) were used. A RIE was performed at Motorola using a halogen gas chemistry that resulted in a hard mask-to-photoresist etch selectivity >3:1 and sidewall profile angles ≥85 degree sign . Line edge roughness (LER) and linewidth critical dimension (CD) measurements were performed using Sandia's GORA(c) CD digital image analysis software. Low LER values (6-9 nm, 3σ, one side) and good CD linearity (better than 10%) were demonstrated for the final pattern-transferred dense polysilicon L/S features from 80 to 175 nm. In addition, pattern transfer (into polysilicon) of loose-pitch (1:2) L/S features with CDs≥60 nm was demonstrated. (c) 1999 American Vacuum Society

Overcoming etch challenges related to EUV based patterning (Conference Presentation)

Science.gov (United States)

Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

2017-04-01

Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

Integrated approach to improving local CD uniformity in EUV patterning

Science.gov (United States)

Liang, Andrew; Hermans, Jan; Tran, Timothy; Viatkina, Katja; Liang, Chen-Wei; Ward, Brandon; Chuang, Steven; Yu, Jengyi; Harm, Greg; Vandereyken, Jelle; Rio, David; Kubis, Michael; Tan, Samantha; Dusa, Mircea; Singhal, Akhil; van Schravendijk, Bart; Dixit, Girish; Shamma, Nader

2017-03-01

Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies. Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development. Illumination

Prospects of DUV OoB suppression techniques in EUV lithography

Science.gov (United States)

Park, Chang-Min; Kim, Insung; Kim, Sang-Hyun; Kim, Dong-Wan; Hwang, Myung-Soo; Kang, Soon-Nam; Park, Cheolhong; Kim, Hyun-Woo; Yeo, Jeong-Ho; Kim, Seong-Sue

2014-04-01

Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor's requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are identified as risks for CDU and Overlay: Infrared (IR) and deep ultraviolet (DUV) out of band (OOB) radiations from laser produced plasma (LPP) EUV source. IR from plasma generating CO2 laser that causes optics heating and wafer overlay error is well suppressed by introducing grating on collector to diffract IR off the optical axis and is the effect has been confirmed by operation of pre-production tool (NXE3100). EUV and DUV OOB which are reflected from mask black boarder (BB) are root causes of EUV-specific CD error at the boundaries of exposed shots which would result in the problem of CDU out of spec unless sufficiently suppressed. Therefore, control of DUV OOB reflection from the mask BB is one of the key technologies that must be developed prior to EUV mass production. In this paper, quantitative assessment on the advantage and the disadvantage of potential OOB solutions will be discussed. EUV and DUV OOB impacts on wafer CDs are measured from NXE3100 & NXE3300 experiments. Significant increase of DUV OOB impact on CD from NXE3300 compared with NXE3100 is observed. There are three ways of technology being developed to suppress DUV OOB: spectral purity filter (SPF) as a scanner solution, multi-layer etching as a solution on mask, and resist top-coating as a process solution. PROs and CONs of on-scanner, on-mask, and on-resist solution for the mass production of EUV lithography will be discussed.

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Science.gov (United States)

Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

2010-04-01

Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

Phase-enhanced defect sensitivity for EUV mask inspection

Science.gov (United States)

Wang, Yow-Gwo; Miyakawa, Ryan; Chao, Weilun; Goldberg, Kenneth; Neureuther, Andy; Naulleau, Patrick

2014-10-01

In this paper, we present a complete study on mask blank and patterned mask inspection utilizing the Zernike phase contrast method. The Zernike phase contrast method provides in-focus inspection ability to study phase defects with enhanced defect sensitivity. However, the 90 degree phase shift in the pupil will significantly reduce the amplitude defect signal at focus. In order to detect both types of defects with a single scan, an optimized phase shift instead of 90 degree on the pupil plane is proposed to achieve an acceptable trade-off on their signal strengths. We can get a 70% of its maximum signal strength at focus for both amplitude and phase defects with a 47 degree phase shift. For SNR, the tradeoff between speckle noise and signal strength has to be considered. The SNR of phase and amplitude defects at focus can both reach 11 with 13 degree phase shift and 50% apodization. Moreover, the simulation results on patterned mask inspection of partially hidden phase defects with die-to-database inspection approach on the blank inspection tool show that the improvement of the Zernike phase method is more limited. A 40% enhancement of peak signal strength can be achieved with the Zernike phase contrast method when the defect is centered in the space, while the enhancement drops to less than 10% when it is beneath the line.

Driving down defect density in composite EUV patterning film stacks

Science.gov (United States)

Meli, Luciana; Petrillo, Karen; De Silva, Anuja; Arnold, John; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex; Durrant, Danielle; Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Kawakami, Shinichiro; Matsunaga, Koichi

2017-03-01

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL. In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

Science.gov (United States)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

EQ-10 electrodeless Z-pinch EUV source for metrology applications

Science.gov (United States)

Gustafson, Deborah; Horne, Stephen F.; Partlow, Matthew J.; Besen, Matthew M.; Smith, Donald K.; Blackborow, Paul A.

2011-11-01

With EUV Lithography systems shipping, the requirements for highly reliable EUV sources for mask inspection and resist outgassing are becoming better defined, and more urgent. The sources needed for metrology applications are very different than that needed for lithography; brightness (not power) is the key requirement. Suppliers for HVM EUV sources have all resources working on high power and have not entered the smaller market for metrology. Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinchTM light source since 19951. The source is currently being used for metrology, mask inspection, and resist development2-4. These applications require especially stable performance in both output power and plasma size and position. Over the last 6 years Energetiq has made many source modifications which have included better thermal management to increase the brightness and power of the source. We now have introduced a new source that will meet requirements of some of the mask metrology first generation tools; this source will be reviewed.

EUV lithography

CERN Document Server

Bakshi, Vivek

2018-01-01

Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current 193-nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists. This book covers the fundamental and latest status of all aspects of EUVL used in the field. Since 2008, when SPIE Press published the first edition of EUVL Lithography, much progress has taken place in the development of EUVL as the choice technology for next-generation lithography. In 2008, EUVL was a prime contender to replace 193-nm-based optical lithography in leading-edge computer chip making, but not everyone was convinced at that point. Switching from 193-nm to 13.5-nm wavelengths was a much bigger jump than the industry had attempted before. It brought several difficult challenges in all areas of lithography-light source, scanner, mask, mask handling, optics, optics metrology, resist, c...

Actinic Mask Inspection at the ALS Initial Design Review

International Nuclear Information System (INIS)

Barty, A; Chapman, H; Sweeney, D; Levesque, R; Bokor, J; Gullikson, E; Jong, S; Liu, Y; Yi, M; Denbeaux, G; Goldberg, K; Naulleau, P; Denham, P; Rekawa, S; Baston, P; Tackaberry, R; Barale, P

2003-01-01

configured so that the collected data emulates the aerial image of a stepper system, thereby enabling rapid evaluation of mask defects and patterning without the need for a resist exposure step. The main uses of the microscope in this mode would be: (a) Review of multilayer and pattern defects to determine their printability; (b) Defect review following a repair process to assess the success of the operation; (c) Investigation of the effects of illumination and NA on the printed image; (d) Process window analysis of defects and other mask features; and (e) Characterizing defects on both patterned and unpatterned masks (i.e. blanks). An essential characteristic of operation in this mode is that the illumination and imaging conditions through focus should emulate as accurately as possible that of a production stepper system. This mode is designed for local review of defects over a small sub-field of the mask; therefore it is not necessary to have the same high-speed throughput required for defect inspection mode. We first describe some technical background relating to EUV masks and defect scanning, with the aim of defining the context of the tool and experiments to be performed. We then present an overview of several candidate optical system configurations for achieve the above objectives, and analyze the ability of each system to achieve the stated project goals. Of key importance is throughput and sensitivity in inspection mode, whilst in AIM mode key points are spatial resolution and the ability to perform stepper emulation imaging. We then down-select the best candidate from this set of solutions to one system, which is then investigated in further detail with a view to producing a preliminary tool design and estimates of overall system performance

EUV blank defect and particle inspection with high throughput immersion AFM with 1nm 3D resolution

NARCIS (Netherlands)

Es, M.H. van; Sadeghian Marnani, H.

2016-01-01

Inspection of EUV mask substrates and blanks is demanding. We envision this is a good target application for massively parallel Atomic Force Microscopy (AFM). We envision to do a full surface characterization of EUV masks with AFM enabling 1nm true 3D resolution over the entire surface. The limiting

Actinic imaging of native and programmed defects on a full-field mask

Energy Technology Data Exchange (ETDEWEB)

Mochi, I.; Goldberg, K. A.; Fontaine, B. La; Tchikoulaeva, A.; Holfeld, C.

2010-03-12

We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMA TECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength (13.4 nm) actinic microscope, are compared with mask and printed-wafer images collected with scanning electron microscopy (SEM) and deep ultraviolet (DUV) inspection tools. We observed that defects that appear to be opaque in the SEM can be highly transparent to EUV light, and inversely, defects that are mostly transparent to the SEM can be highly opaque to EUV. The nature and composition of these defects, whether they appear on the top surface, within the multilayer coating, or on the substrate as buried bumps or pits, influences both their significance when printed, and their detectability with the available techniques. Actinic inspection quantitatively predicts the characteristics of printed defect images in ways that may not be possible with non-EUV techniques. As a quantitative example, we investigate the main structural characteristics of a buried pit defect based on EUV through-focus imaging.

Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

International Nuclear Information System (INIS)

Spector, S. J.; White, D. L.; Tennant, D. M.; Ocola, L. E.; Novembre, A. E.; Peabody, M. L.; Wood, O. R. II

1999-01-01

We have developed two new methods for at-wavelength inspection of mask blanks for extreme-ultraviolet (EUV) lithography. In one method an EUV photoresist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. In the second method, the photoresist is applied to an EUV transparent membrane that is placed in close proximity to the mask and then exposed and developed. Both reflectivity defects and phase defects alter the exposure of the resist, resulting in mounds of resist at defect sites that can then be located by visual inspection. In the direct application method, a higher contrast resist was shown to increase the height of the mounds, thereby improving the sensitivity of the technique. In the membrane method, a holographic technique was used to reconstruct an image of the mask, revealing the presence of very small defects, approximately 0.2 μm in size. The demonstrated clean transfer of phase and amplitude defects to resist features on a membrane will be important when flagging defects in an automatic inspection tool. (c) 1999 American Vacuum Society

Feasibility of compensating for EUV field edge effects through OPC

Science.gov (United States)

Maloney, Chris; Word, James; Fenger, Germain L.; Niroomand, Ardavan; Lorusso, Gian F.; Jonckheere, Rik; Hendrickx, Eric; Smith, Bruce W.

2014-04-01

As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optical system for operation. This requirement causes EUV specific effects such as shadowing. The absorber physically shadows the reflective multilayer (ML) on an EUV reticle resulting in pattern fidelity degradation. To reduce this degradation, a thinner absorber may help. Yet, as the absorber thickness decreases, reflectivity increases in the `dark' region around the image field, resulting in a loss of contrast. The region around the edge of the die on the mask of unpatterned absorber material deposited on top of ML, known as the image border, is also susceptible to undesirable reflections in an ideally dark region. For EUVL to be enabled for high-volume manufacturing (HVM), reticle masking (REMA) blades are used to shield light from the image border to allow for the printing of densely spaced die. When die are printed densely, the image border of each neighboring die will overlap with the edge of a given die resulting in an increase of dose that overexposes features at the edge of the field. This effect is convolved with a fingerprint from the edge of the REMA blades. This phenomenon will be referred to as a field edge effect. One such mitigation strategy that has been investigated to reduce the field edge effect is to fully remove the ML along the image border to ensure that no actinic-EUV radiation can be reflected onto neighboring die. This has proven to suppress the effect, but residual out-of-band radiation still provides additional dose to features near the image border, especially in the corners where three neighboring fields overlap. Measurements of dense contact holes (CHs) have been made along the image border with and without a ML-etched border at IMEC in collaboration with Micron using the ASML NXE:3100. The

Masking Period Patterns & Forward Masking for Speech-Shaped Noise: Age-related effects

Science.gov (United States)

Grose, John H.; Menezes, Denise C.; Porter, Heather L.; Griz, Silvana

2015-01-01

Objective The purpose of this study was to assess age-related changes in temporal resolution in listeners with relatively normal audiograms. The hypothesis was that increased susceptibility to non-simultaneous masking contributes to the hearing difficulties experienced by older listeners in complex fluctuating backgrounds. Design Participants included younger (n = 11), middle-aged (n = 12), and older (n = 11) listeners with relatively normal audiograms. The first phase of the study measured masking period patterns for speech-shaped noise maskers and signals. From these data, temporal window shapes were derived. The second phase measured forward-masking functions, and assessed how well the temporal window fits accounted for these data. Results The masking period patterns demonstrated increased susceptibility to backward masking in the older listeners, compatible with a more symmetric temporal window in this group. The forward-masking functions exhibited an age-related decline in recovery to baseline thresholds, and there was also an increase in the variability of the temporal window fits to these data. Conclusions This study demonstrated an age-related increase in susceptibility to non-simultaneous masking, supporting the hypothesis that exacerbated non-simultaneous masking contributes to age-related difficulties understanding speech in fluctuating noise. Further support for this hypothesis comes from limited speech-in-noise data suggesting an association between susceptibility to forward masking and speech understanding in modulated noise. PMID:26230495

EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

Energy Technology Data Exchange (ETDEWEB)

Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

2009-08-01

Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

Masking Period Patterns and Forward Masking for Speech-Shaped Noise: Age-Related Effects.

Science.gov (United States)

Grose, John H; Menezes, Denise C; Porter, Heather L; Griz, Silvana

2016-01-01

The purpose of this study was to assess age-related changes in temporal resolution in listeners with relatively normal audiograms. The hypothesis was that increased susceptibility to nonsimultaneous masking contributes to the hearing difficulties experienced by older listeners in complex fluctuating backgrounds. Participants included younger (n = 11), middle-age (n = 12), and older (n = 11) listeners with relatively normal audiograms. The first phase of the study measured masking period patterns for speech-shaped noise maskers and signals. From these data, temporal window shapes were derived. The second phase measured forward-masking functions and assessed how well the temporal window fits accounted for these data. The masking period patterns demonstrated increased susceptibility to backward masking in the older listeners, compatible with a more symmetric temporal window in this group. The forward-masking functions exhibited an age-related decline in recovery to baseline thresholds, and there was also an increase in the variability of the temporal window fits to these data. This study demonstrated an age-related increase in susceptibility to nonsimultaneous masking, supporting the hypothesis that exacerbated nonsimultaneous masking contributes to age-related difficulties understanding speech in fluctuating noise. Further support for this hypothesis comes from limited speech-in-noise data, suggesting an association between susceptibility to forward masking and speech understanding in modulated noise.

Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

Science.gov (United States)

Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

2012-03-01

Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

Modulation cues influence binaural masking-level difference in masking-pattern experiments.

Science.gov (United States)

Nitschmann, Marc; Verhey, Jesko L

2012-03-01

Binaural masking patterns show a steep decrease in the binaural masking-level difference (BMLD) when masker and signal have no frequency component in common. Experimental threshold data are presented together with model simulations for a diotic masker centered at 250 or 500 Hz and a bandwidth of 10 or 100 Hz masking a sinusoid interaurally in phase (S(0)) or in antiphase (S(π)). Simulations with a binaural model, including a modulation filterbank for the monaural analysis, indicate that a large portion of the decrease in the BMLD in remote-masking conditions may be due to an additional modulation cue available for monaural detection. © 2012 Acoustical Society of America

Enabling laboratory EUV research with a compact exposure tool

Science.gov (United States)

Brose, Sascha; Danylyuk, Serhiy; Tempeler, Jenny; Kim, Hyun-su; Loosen, Peter; Juschkin, Larissa

2016-03-01

In this work we present the capabilities of the designed and realized extreme ultraviolet laboratory exposure tool (EUVLET) which has been developed at the RWTH-Aachen, Chair for the Technology of Optical Systems (TOS), in cooperation with the Fraunhofer Institute for Laser Technology (ILT) and Bruker ASC GmbH. Main purpose of this laboratory setup is the direct application in research facilities and companies with small batch production, where the fabrication of high resolution periodic arrays over large areas is required. The setup can also be utilized for resist characterization and evaluation of its pre- and post-exposure processing. The tool utilizes a partially coherent discharge produced plasma (DPP) source and minimizes the number of other critical components to a transmission grating, the photoresist coated wafer and the positioning system for wafer and grating and utilizes the Talbot lithography approach. To identify the limits of this approach first each component is analyzed and optimized separately and relations between these components are identified. The EUV source has been optimized to achieve the best values for spatial and temporal coherence. Phase-shifting and amplitude transmission gratings have been fabricated and exposed. Several commercially available electron beam resists and one EUV resist have been characterized by open frame exposures to determine their contrast under EUV radiation. Cold development procedure has been performed to further increase the resist contrast. By analyzing the exposure results it can be demonstrated that only a 1:1 copy of the mask structure can be fully resolved by the utilization of amplitude masks. The utilized phase-shift masks offer higher 1st order diffraction efficiency and allow a demagnification of the mask structure in the achromatic Talbot plane.

Fundamentals of EUV resist-inorganic hardmask interactions

Science.gov (United States)

Goldfarb, Dario L.; Glodde, Martin; De Silva, Anuja; Sheshadri, Indira; Felix, Nelson M.; Lionti, Krystelle; Magbitang, Teddie

2017-03-01

High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin (<5nm) inorganic HMs can provide higher etch selectivity, lower post-etch LWR, decreased defectivity and wet strippability compared to spin-on hybrid HMs (e.g., SiARC), however such novel layers can induce resist adhesion failure and resist residue. Therefore, a fundamental understanding of EUV resist-inorganic HM interactions is needed in order to optimize the EUV resist interfacial behavior. In this paper, novel materials and processing techniques are introduced to characterize and improve the EUV resist-inorganic HM interface. HM surface interactions with specific EUV resist components are evaluated for open-source experimental resist formulations dissected into its individual additives using EUV contrast curves as an effective characterization method to determine post-development residue formation. Separately, an alternative adhesion promoter platform specifically tailored for a selected ultrathin inorganic HM based on amorphous silicon (aSi) is presented and the mitigation of resist delamination is exemplified for the cases of positive-tone and negative-tone development (PTD, NTD). Additionally, original wafer priming hardware for the deposition of such novel adhesion promoters is unveiled. The lessons learned in this work can be directly applied to the engineering of EUV resist materials and processes specifically designed to work on such novel HMs.

Sub 20nm particle inspection on EUV mask blanks

NARCIS (Netherlands)

Bussink, P.G.W.; Volatier, J.B.; Walle, P. van der; Fritz, E.C.; Donck, J.C.J. van der

2016-01-01

The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The detection principle of this system is dark-field microscopy. The performance of the system has been improved via model-based design. Through our model of the scattering

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

Science.gov (United States)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2013-04-01

As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

Self-aligned blocking integration demonstration for critical sub-30nm pitch Mx level patterning with EUV self-aligned double patterning

Science.gov (United States)

Raley, Angélique; Lee, Joe; Smith, Jeffrey T.; Sun, Xinghua; Farrell, Richard A.; Shearer, Jeffrey; Xu, Yongan; Ko, Akiteru; Metz, Andrew W.; Biolsi, Peter; Devilliers, Anton; Arnold, John; Felix, Nelson

2018-04-01

We report a sub-30nm pitch self-aligned double patterning (SADP) integration scheme with EUV lithography coupled with self-aligned block technology (SAB) targeting the back end of line (BEOL) metal line patterning applications for logic nodes beyond 5nm. The integration demonstration is a validation of the scalability of a previously reported flow, which used 193nm immersion SADP targeting a 40nm pitch with the same material sets (Si3N4 mandrel, SiO2 spacer, Spin on carbon, spin on glass). The multi-color integration approach is successfully demonstrated and provides a valuable method to address overlay concerns and more generally edge placement error (EPE) as a whole for advanced process nodes. Unbiased LER/LWR analysis comparison between EUV SADP and 193nm immersion SADP shows that both integrations follow the same trend throughout the process steps. While EUV SADP shows increased LER after mandrel pull, metal hardmask open and dielectric etch compared to 193nm immersion SADP, the final process performance is matched in terms of LWR (1.08nm 3 sigma unbiased) and is only 6% higher than 193nm immersion SADP for average unbiased LER. Using EUV SADP enables almost doubling the line density while keeping most of the remaining processes and films unchanged, and provides a compelling alternative to other multipatterning integrations, which present their own sets of challenges.

Pattern transfer with stabilized nanoparticle etch masks

International Nuclear Information System (INIS)

Hogg, Charles R; Majetich, Sara A; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A

2013-01-01

Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO x substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. (paper)

Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

KAUST Repository

Chakrabarty, Souvik; Ouyang, Christine; Krysak, Marie; Trikeriotis, Markos; Cho, Kyoungyoung; Giannelis, Emmanuel P.; Ober, Christopher K.

2013-01-01

DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.

Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

KAUST Repository

Chakrabarty, Souvik

2013-04-01

DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.

Analysis and characterization of contamination in EUV reticles

Science.gov (United States)

Okoroanyanwu, Uzodinma; Dittmar, Kornelia; Fahr, Torsten; Wallow, Tom; La Fontaine, Bruno; Wood, Obert; Holfeld, Christian; Bubke, Karsten; Peters, Jan-Hendrik

2010-04-01

A host of complementary imaging techniques (Scanning Electron Microscopy), surface analytical technique (Auger Electron Spectroscopy, AES), chemical analytical and speciation techniques (Grazing Incidence Reflectance Fourier-Transform Infrared Spectroscopy, GIR-FTIR; and Raman spectroscopy) have been assessed for their sensitivity and effectiveness in analyzing contamination on three EUV reticles that were contaminated to varying degrees. The first reticle was contaminated as a result of its exposure experience on the SEMATECH EUV Micro Exposure Tool (MET) at Lawrence Berkeley National Laboratories, where it was exposed to up to 80 hours of EUV radiation. The second reticle was a full-field reticle, specifically designed to monitor molecular contamination, and exposed to greater than 1600J/cm2 of EUV radiation on the ASML Alpha Demo Tool (ADT) in Albany Nanotech in New York. The third reticle was intentionally contaminated with hydrocarbons in the Microscope for Mask Imaging and Contamination Studies (MIMICS) tool at the College of Nanoscale Sciences of State University of New York at Albany. The EUV reflectivities of some of these reticles were measured on the Advanced Light Source EUV Reflectomer at Lawrence Berkeley National Laboratories and PTB Bessy in Berlin, respectively. Analysis and characterization of thin film contaminants on the two EUV reticles exposed to varying degrees of EUV radiation in both MET and ADT confirm that the two most common contamination types are carbonization and surface oxidation, mostly on the exposed areas of the reticle, and with the MET being significantly more susceptible to carbon contamination than the ADT. While AES in both surface scanning and sputter mode is sensitive and efficient in analyzing thin contaminant films (of a few nanometers), GIRFTIR is sensitive to thick films (of order of a 100 nm or more on non-infra-red reflecting substrates), Raman spectroscopy is not compatible with analyzing such contaminants because of

Using excitation patterns to predict auditory masking

NARCIS (Netherlands)

Heijden, van der M.L.; Kohlrausch, A.G.

1992-01-01

We investigated how well auditory masking can be predicted from excitation patterns. For this purpose, a quantitative model proposed by Moore and Glasberg (1987) and Glasberg and Moore (1990) was used to calculate excitation patterns evoked by stationary sounds. We performed simulations of a number

A pattern-based method to automate mask inspection files

Science.gov (United States)

Kamal Baharin, Ezni Aznida Binti; Muhsain, Mohamad Fahmi Bin; Ahmad Ibrahim, Muhamad Asraf Bin; Ahmad Noorhani, Ahmad Nurul Ihsan Bin; Sweis, Jason; Lai, Ya-Chieh; Hurat, Philippe

2017-03-01

Mask inspection is a critical step in the mask manufacturing process in order to ensure all dimensions printed are within the needed tolerances. This becomes even more challenging as the device nodes shrink and the complexity of the tapeout increases. Thus, the amount of measurement points and their critical dimension (CD) types are increasing to ensure the quality of the mask. In addition to the mask quality, there is a significant amount of manpower needed when the preparation and debugging of this process are not automated. By utilizing a novel pattern search technology with the ability to measure and report match region scan-line (edge) measurements, we can create a flow to find, measure and mark all metrology locations of interest and provide this automated report to the mask shop for inspection. A digital library is created based on the technology product and node which contains the test patterns to be measured. This paper will discuss how these digital libraries will be generated and then utilized. As a time-critical part of the manufacturing process, this can also reduce the data preparation cycle time, minimize the amount of manual/human error in naming and measuring the various locations, reduce the risk of wrong/missing CD locations, and reduce the amount of manpower needed overall. We will also review an example pattern and how the reporting structure to the mask shop can be processed. This entire process can now be fully automated.

Using synchrotron light to accelerate EUV resist and mask materials learning

Science.gov (United States)

Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Jones, Gideon; McClinton, Brittany; Miyakawa, Ryan; Mochi, Iacopo; Montgomery, Warren; Rekawa, Seno; Wallow, Tom

2011-03-01

As commercialization of extreme ultraviolet lithography (EUVL) progresses, direct industry activities are being focused on near term concerns. The question of long term extendibility of EUVL, however, remains crucial given the magnitude of the investments yet required to make EUVL a reality. Extendibility questions are best addressed using advanced research tools such as the SEMATECH Berkeley microfield exposure tool (MET) and actinic inspection tool (AIT). Utilizing Lawrence Berkeley National Laboratory's Advanced Light Source facility as the light source, these tools benefit from the unique properties of synchrotron light enabling research at nodes generations ahead of what is possible with commercial tools. The MET for example uses extremely bright undulator radiation to enable a lossless fully programmable coherence illuminator. Using such a system, resolution enhancing illuminations achieving k1 factors of 0.25 can readily be attained. Given the MET numerical aperture of 0.3, this translates to an ultimate resolution capability of 12 nm. Using such methods, the SEMATECH Berkeley MET has demonstrated resolution in resist to 16-nm half pitch and below in an imageable spin-on hard mask. At a half pitch of 16 nm, this material achieves a line-edge roughness of 2 nm with a correlation length of 6 nm. These new results demonstrate that the observed stall in ultimate resolution progress in chemically amplified resists is a materials issue rather than a tool limitation. With a resolution limit of 20-22 nm, the CAR champion from 2008 remains as the highest performing CAR tested to date. To enable continued advanced learning in EUV resists, SEMATECH has initiated a plan to implement a 0.5 NA microfield tool at the Advanced Light Source synchrotron facility. This tool will be capable of printing down to 8-nm half pitch.

Laser micromachined wax-covered plastic paper as both sputter deposition shadow masks and deep-ultraviolet patterning masks for polymethylmethacrylate-based microfluidic systems

KAUST Repository

Fan, Yiqiang

2013-12-16

We report a technically innovative method of fabricating masks for both deep-ultraviolet (UV) patterning and metal sputtering on polymethylmethacrylate (PMMA) for microfluidic systems. We used a CO2 laser system to cut the required patterns on wax-covered plastic paper; the laser-patterned wax paper will either work as a mask for deep-UV patterning or as a mask for metal sputtering. A microfluidic device was also fabricated to demonstrate the feasibility of this method. The device has two layers: the first layer is a 1-mm thick PMMA substrate that was patterned by deep-UV exposure to create microchannels. The mask used in this process was the laser-cut wax paper. The second layer, also a 1-mm thick PMMA layer, was gold sputtered with patterned wax paper as the shadow mask. These two pieces of PMMA were then bonded to form microchannels with exposed electrodes. This process is a simple and rapid method for creating integrated microfluidic systems that do not require cleanroom facilities.

Development for 2D pattern quantification method on mask and wafer

Science.gov (United States)

Matsuoka, Ryoichi; Mito, Hiroaki; Toyoda, Yasutaka; Wang, Zhigang

2010-03-01

We have developed the effective method of mask and silicon 2-dimensional metrology. The aim of this method is evaluating the performance of the silicon corresponding to Hotspot on a mask. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. 2-dimensional Shape quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. On the other hand, there is roughness in the silicon shape made from a mass-production line. Moreover, there is variation in the silicon shape. For this reason, quantification of silicon shape is important, in order to estimate the performance of a pattern. In order to quantify, the same shape is equalized in two dimensions. And the method of evaluating based on the shape is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. It is possible to analyze variability of the edge of the same position with high precision. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and

Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection

Science.gov (United States)

Malloy, Matt; Thiel, Brad; Bunday, Benjamin D.; Wurm, Stefan; Jindal, Vibhu; Mukhtar, Maseeh; Quoi, Kathy; Kemen, Thomas; Zeidler, Dirk; Eberle, Anna Lena; Garbowski, Tomasz; Dellemann, Gregor; Peters, Jan Hendrik

2015-09-01

The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to their limits. In parallel, gaps in mask inspection capability are growing as new generations of mask technologies are developed to support these sub-10nm wafer manufacturing requirements. In particular, the challenges associated with nanoimprint and extreme ultraviolet (EUV) mask inspection require new strategies that enable fast inspection at high sensitivity. The tradeoffs between sensitivity and throughput for optical and e-beam inspection are well understood. Optical inspection offers the highest throughput and is the current workhorse of the industry for both wafer and mask inspection. E-beam inspection offers the highest sensitivity but has historically lacked the throughput required for widespread adoption in the manufacturing environment. It is unlikely that continued incremental improvements to either technology will meet tomorrow's requirements, and therefore a new inspection technology approach is required; one that combines the high-throughput performance of optical with the high-sensitivity capabilities of e-beam inspection. To support the industry in meeting these challenges SUNY Poly SEMATECH has evaluated disruptive technologies that can meet the requirements for high volume manufacturing (HVM), for both the wafer fab [1] and the mask shop. Highspeed massively parallel e-beam defect inspection has been identified as the leading candidate for addressing the key gaps limiting today's patterned defect inspection techniques. As of late 2014 SUNY Poly SEMATECH completed a review, system analysis, and proof of concept evaluation of multiple e-beam technologies for defect inspection. A champion approach has been identified based on a multibeam technology from Carl Zeiss. This paper includes a discussion on the

Multiple beam mask writers: an industry solution to the write time crisis

Science.gov (United States)

Litt, Lloyd C.

2010-09-01

The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

Automatic pattern localization across layout database and photolithography mask

Science.gov (United States)

Morey, Philippe; Brault, Frederic; Beisser, Eric; Ache, Oliver; Röth, Klaus-Dieter

2016-03-01

Advanced process photolithography masks require more and more controls for registration versus design and critical dimension uniformity (CDU). The distribution of the measurement points should be distributed all over the whole mask and may be denser in areas critical to wafer overlay requirements. This means that some, if not many, of theses controls should be made inside the customer die and may use non-dedicated patterns. It is then mandatory to access the original layout database to select patterns for the metrology process. Finding hundreds of relevant patterns in a database containing billions of polygons may be possible, but in addition, it is mandatory to create the complete metrology job fast and reliable. Combining, on one hand, a software expertise in mask databases processing and, on the other hand, advanced skills in control and registration equipment, we have developed a Mask Dataprep Station able to select an appropriate number of measurement targets and their positions in a huge database and automatically create measurement jobs on the corresponding area on the mask for the registration metrology system. In addition, the required design clips are generated from the database in order to perform the rendering procedure on the metrology system. This new methodology has been validated on real production line for the most advanced process. This paper presents the main challenges that we have faced, as well as some results on the global performances.

Metal layer mask patterning by force microscopy lithography

International Nuclear Information System (INIS)

Filho, H.D. Fonseca; Mauricio, M.H.P.; Ponciano, C.R.; Prioli, R.

2004-01-01

The nano-lithography of a metallic surface in air by atomic force microscopy while operated in contact mode and equipped with a diamond tip is presented. The aluminum mask was prepared by thermal deposition on arsenic sulfide films. The analysis of the scratches performed by the tip on the metallic mask show that the depth of the lithographed pattern increases with the increase of the applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth and width decreases. Nano-indentations performed with the diamond tip show that the plastically deformed surface increases with the increase of the duration of the applied force. The use of the nano-lithography method to create nano-structures is discussed

Radiometry for the EUV lithography; Radiometrie fuer die EUV-Lithographie

Energy Technology Data Exchange (ETDEWEB)

Scholze, Frank [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany). Arbeitsgruppe ' EUV-Radiometrie' ; Laubis, Christian; Barboutis, Annett; Buchholz, Christian; Fischer, Andreas; Puls, Jana; Stadelhoff, Christian

2014-12-15

The EUV reflectrometry at the PTB storage BESSY I and BESSY II is described. Results on the reflectivities of some EUV mirrors are presented. Finally the spectral sensitivities of different photodiodes used as EUV detectors are presented. (HSI)

High-NA EUV lithography enabling Moore's law in the next decade

Science.gov (United States)

van Schoot, Jan; Troost, Kars; Bornebroek, Frank; van Ballegoij, Rob; Lok, Sjoerd; Krabbendam, Peter; Stoeldraijer, Judon; Loopstra, Erik; Benschop, Jos P.; Finders, Jo; Meiling, Hans; van Setten, Eelco; Kneer, Bernhard; Kuerz, Peter; Kaiser, Winfried; Heil, Tilmann; Migura, Sascha; Neumann, Jens Timo

2017-10-01

While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their activities on a EUV exposure tool with Numerical Aperture of 0.55. The purpose of this scanner, targeting an ultimate resolution of 8nm, is to extend Moore's law throughout the next decade. A novel, anamorphic lens design, capable of providing the required Numerical Aperture has been investigated; This lens will be paired with new, faster stages and more accurate sensors enabling Moore's law economical requirements, as well as the tight focus and overlay control needed for future process nodes. The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling. Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution. This paper presents an overview of the target specifications, key technology innovations and imaging simulations demonstrating the advantages as compared to 0.33NA and showing the capabilities of the next generation EUV systems.

Roughness characterization of EUV multilayer coatings and ultra-smooth surfaces by light scattering

Science.gov (United States)

Trost, M.; Schröder, S.; Lin, C. C.; Duparré, A.; Tünnermann, A.

2012-09-01

Optical components for the extreme ultraviolet (EUV) face stringent requirements for surface finish, because even small amounts of surface and interface roughness can cause significant scattering losses and impair image quality. In this paper, we investigate the roughness evolution of Mo/Si multilayers by analyzing the scattering behavior at a wavelength of 13.5 nm as well as taking atomic force microscopy (AFM) measurements before and after coating. Furthermore, a new approach to measure substrate roughness is presented, which is based on light scattering measurements at 405 nm. The high robustness and sensitivity to roughness of this method are illustrated using an EUV mask blank with a highspatial frequency roughness of as low as 0.04 nm.

Improvements in the EQ-10 electrodeless Z-pinch EUV source for metrology applications

Science.gov (United States)

Horne, Stephen F.; Gustafson, Deborah; Partlow, Matthew J.; Besen, Matthew M.; Smith, Donald K.; Blackborow, Paul A.

2011-04-01

Now that EUV lithography systems are beginning to ship into the fabs for next generation chips it is more critical that the EUV infrastructure developments are keeping pace. Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinch™ light source since 2005. The source is currently being used for metrology, mask inspection, and resist development. These applications require especially stable performance in both power and source size. Over the last 5 years Energetiq has made many source modifications which have included better thermal management as well as high pulse rate operation6. Recently we have further increased the system power handling and electrical pulse reproducibility. The impact of these modifications on source performance will be reported.

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Science.gov (United States)

Kozawa, Takahiro; Oizumi, Hiroaki; Itani, Toshiro; Tagawa, Seiichi

2010-11-01

The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.

Objective for EUV microscopy, EUV lithography, and x-ray imaging

Science.gov (United States)

Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

2016-05-03

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

The future of EUV lithography: enabling Moore's Law in the next decade

Science.gov (United States)

Pirati, Alberto; van Schoot, Jan; Troost, Kars; van Ballegoij, Rob; Krabbendam, Peter; Stoeldraijer, Judon; Loopstra, Erik; Benschop, Jos; Finders, Jo; Meiling, Hans; van Setten, Eelco; Mika, Niclas; Dredonx, Jeannot; Stamm, Uwe; Kneer, Bernhard; Thuering, Bernd; Kaiser, Winfried; Heil, Tilmann; Migura, Sascha

2017-03-01

While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their development activities on a EUV exposure tool with Numerical Aperture greater than 0.5. The purpose of this scanner, targeting a resolution of 8nm, is to extend Moore's law throughout the next decade. A novel, anamorphic lens design, has been developed to provide the required Numerical Aperture; this lens will be paired with new, faster stages and more accurate sensors enabling Moore's law economical requirements, as well as the tight focus and overlay control needed for future process nodes. The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling, and possibly in the metrology concepts. Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution. This paper presents an overview of the key technology innovations and infrastructure requirements for the next generation EUV systems.

Limitations of patterning thin films by shadow mask high vacuum chemical vapor deposition

International Nuclear Information System (INIS)

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2014-01-01

A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was employed to grow titanium dioxide (TiO 2 ) patterns onto silicon. The directed nature of precursor transport – which originates from the high vacuum environment during the process – allows shading certain regions on the substrate by shadow masks and thus depositing patterned thin films. While the use of such masks is an emerging field in stencil or shadow mask lithography, their use for structuring thin films within HV-CVD has not been reported so far. The advantage of the employed technique is the precise control of lateral spacing and of the distance between shading mask and substrate surface which is achieved by manufacturing them directly on the substrate. As precursor transport takes place in the molecular flow regime, the precursor impinging rates (and therefore the film growth rates) on the surface can be simulated as function of the reactor and shading mask geometry using a comparatively simple mathematical model. In the current contribution such a mathematical model, which predicts impinging rates on plain or shadow mask structured substrates, is presented. Its validity is confirmed by TiO 2 -deposition on plain silicon substrates (450 °C) using titanium tetra isopropoxide as precursor. Limitations of the patterning process are investigated by the deposition of TiO 2 on structured substrates and subsequent shadow mask lift-off. The geometry of the deposits is according to the mathematical model. Shading effects due to the growing film enables to fabricate deposits with predetermined variations in topography and non-flat top deposits which are complicated to obtain by classical clean room processes. As a result of the enhanced residual pressure of decomposition products and titanium precursors and the

Novel EUV photoresist for sub-7nm node (Conference Presentation)

Science.gov (United States)

Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

2017-04-01

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

Hybrid mask for deep etching

KAUST Repository

Ghoneim, Mohamed T.

2017-08-10

Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

Exploration of BEOL line-space patterning options at 12 nm half-pitch and below

Science.gov (United States)

Decoster, S.; Lazzarino, F.; Petersen Barbosa Lima, L.; Li, W.; Versluijs, J.; Halder, S.; Mallik, A.; Murdoch, G.

2018-03-01

While the semiconductor industry is almost ready for high-volume manufacturing of the 7 nm technology node, research centers are defining and troubleshooting the patterning options for the 5 nm technology node (N5) and below. The target dimension for imec's N5 BEOL applications is 20-24 nm Metal Pitch (MP), which requires Self-Aligned multiple (Double/Quadruple/Octuple) Patterning approaches (SAxP) in combination with EUV or immersion lithography at 193 nm. There are numerous technical challenges to enable gratings at the hard mask level such as good uniformity across wafer, low line edge/width roughness (LER/LWR), large process window, and all of this at low cost. An even greater challenge is to transfer these gratings into the dielectric material at such critical dimensions, where increased line edge roughness, line wiggling and even pattern collapse can be expected for materials with small mechanical stability such as highly porous low-k dielectrics. In this work we first compare three different patterning options for 12 nm half-pitch gratings at the hard mask level: EUV-based SADP and 193i-based SAQP and SAOP. This comparison will be based on process window, line edge/width roughness and cost. Next, the transfer of 12 nm line/space gratings in the dielectric material is discussed and presented. The LER of the dielectric lines is investigated as a function of the dielectric material, the trench depth, and the stress in the sacrificial hard mask. Finally, we elaborate on the different options to enable scaling down from 24 nm MP to 16 nm MP, and demonstrate 8 nm line/space gratings with 193i-based SAOP.

EUV microexposures at the ALS using the 0.3-NA MET projection optics

International Nuclear Information System (INIS)

Naulleau, Patrick; Goldberg, Kenneth A.; Anderson, Erik; Cain, Jason P.; Denham, Paul; Hoef, Brian; Jackson, Keith; Morlens, Anne-Sophie; Rekawa, Seno; Dean, Kim

2005-01-01

The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure Tool (MET) optic has given rise to a new class of ultra-high resolution microexposure stations. Once such printing station has been developed and implemented at Lawrence Berkeley National Laboratory's Advanced Light Source. This flexible printing station utilizes a programmable coherence illuminator providing real-time pupil-fill control for advanced EUV resist and mask development. The Berkeley exposure system programmable illuminator enables several unique capabilities. Using dipole illumination out to σ=1, the Berkeley tool supports equal-line-space printing down to 12 nm, well beyond the capabilities of similar tools. Using small-sigma illumination combined with the central obscuration of the MET optic enables the system to print feature sizes that are twice as small as those coded on the mask. In this configuration, the effective 10x-demagnification for equal lines and spaces reduces the mask fabrication burden for ultra-high-resolution printing. The illuminator facilitates coherence studies such as the impact of coherence on line-edge roughness (LER) and flare. Finally the illuminator enables novel print-based aberration monitoring techniques as described elsewhere in these proceedings. Here we describe the capabilities of the new MET printing station and present system characterization results. Moreover, we present the latest printing results obtained in experimental resists. Limited by the availability of high-resolution photoresists, equal line-space printing down to 25 nm has been demonstrated as well as isolated line printing down to 29 nm with an LER of approaching 3 nm

Contrast matching of line gratings obtained with NXE3XXX and EUV- interference lithography

Science.gov (United States)

Tasdemir, Zuhal; Mochi, Iacopo; Olvera, Karen Garrido; Meeuwissen, Marieke; Yildirim, Oktay; Custers, Rolf; Hoefnagels, Rik; Rispens, Gijsbert; Fallica, Roberto; Vockenhuber, Michaela; Ekinci, Yasin

2017-10-01

Extreme UV lithography (EUVL) has gained considerable attention for several decades as a potential technology for the semiconductor industry and it is now close to being adopted in high-volume manufacturing. At Paul Scherrer Institute (PSI), we have focused our attention on EUV resist performance issues by testing available high-performance EUV resists in the framework of a joint collaboration with ASML. For this purpose, we use the grating-based EUV-IL setup installed at the Swiss Light Source (SLS) at PSI, in which a coherent beam with 13.5 nm wavelength is used to produce a periodic aerial image with virtually 100% contrast and large depth of focus. Interference lithography is a relatively simple technique and it does not require many optical components, therefore the unintended flare is minimized and the aerial image is well-defined sinusoidal pattern. For the collaborative work between PSI and ASML, exposures are being performed on the EUV-IL exposure tool at PSI. For better quantitative comparison to the NXE scanner results, it is targeted to determine the actual NILS of the EUV-IL exposure tool at PSI. Ultimately, any resist-related metrology must be aligned and compared with the performance of EUV scanners. Moreover, EUV-IL is a powerful method for evaluating the resist performance and a resist which performs well with EUV-IL, shows, in general, also good performance with NXE scanners. However, a quantitative prediction of the performance based on EUV-IL measurements has not been possible due to the differences in aerial image formation. In this work, we aim to study the performance of EUV resists with different aerial images. For this purpose, after the real interference pattern exposure, we overlay a flat field exposure to emulate different levels of contrast. Finally, the results are compared with data obtained from EUV scanner. This study will enable not only match the data obtained from EUV- IL at PSI with the performance of NXE scanners, but also a

AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs

International Nuclear Information System (INIS)

Feng, W; Pan, J Q; Yang, H; Hou, L P; Zhou, F; Zhao, L J; Zhu, H L; Wang, W

2006-01-01

We have performed a narrow stripe selective growth of oxide-free AlGaInAs waveguides on InP substrates patterned with pairs of SiO 2 mask stripes under optimized growth conditions. The mask stripe width varied from 0 to 40 μm, while the window region width between a pair of mask stripes was fixed at 1.5, 2.5 or 3.5 μm. Flat and smooth AlGaInAs waveguides covered by specific InP layers are successfully grown on substrates patterned with different mask designs. The thickness enhancement ratio and the photoluminescence (PL) spectrum of the AlGaInAs narrow stripe waveguides are strongly dependent on the mask stripe width and the window region width. In particular, a large PL wavelength shift of 79 nm and a PL FWHM of less than 64 meV are obtained simultaneously with a small mask stripe width varying from 0 to 40 μm when the window region width is 1.5 μm. We present some possible interpretations of the experimental observations in considering both the migration effect from a masked region and the lateral vapour diffusion effect

EUVS Sounding Rocket Payload

Science.gov (United States)

Stern, Alan S.

1996-01-01

During the first half of this year (CY 1996), the EUVS project began preparations of the EUVS payload for the upcoming NASA sounding rocket flight 36.148CL, slated for launch on July 26, 1996 to observe and record a high-resolution (approx. 2 A FWHM) EUV spectrum of the planet Venus. These preparations were designed to improve the spectral resolution and sensitivity performance of the EUVS payload as well as prepare the payload for this upcoming mission. The following is a list of the EUVS project activities that have taken place since the beginning of this CY: (1) Applied a fresh, new SiC optical coating to our existing 2400 groove/mm grating to boost its reflectivity; (2) modified the Ranicon science detector to boost its detective quantum efficiency with the addition of a repeller grid; (3) constructed a new entrance slit plane to achieve 2 A FWHM spectral resolution; (4) prepared and held the Payload Initiation Conference (PIC) with the assigned NASA support team from Wallops Island for the upcoming 36.148CL flight (PIC held on March 8, 1996; see Attachment A); (5) began wavelength calibration activities of EUVS in the laboratory; (6) made arrangements for travel to WSMR to begin integration activities in preparation for the July 1996 launch; (7) paper detailing our previous EUVS Venus mission (NASA flight 36.117CL) published in Icarus (see Attachment B); and (8) continued data analysis of the previous EUVS mission 36.137CL (Spica occultation flight).

MC1R studies in dogs with melanistic mask or brindle patterns.

Science.gov (United States)

Schmutz, S M; Berryere, T G; Ellinwood, N M; Kerns, J A; Barsh, G S

2003-01-01

Black mask is a characteristic pattern in which red, yellow, tan, fawn, or brindle dogs exhibit a melanistic muzzle which may extend up onto the ears. Melanistic mask is inherited in several breeds as an autosomal dominant trait, and appears to be a fixed trait in a few breeds of dogs. A MC1R nonsense mutation, R306ter, has been shown to cause a completely red or yellow coat color in certain breeds such as Irish setters, yellow Labrador retrievers, and golden retrievers. The amino acid sequence for the melanocortin receptor 1 gene (MC1R) was examined in 17 dogs with melanistic masks from seven breeds, 19 dogs without melanistic masks, and 7 dogs in which their coat color made the mask difficult to distinguish. We also examined nine brindle dogs of four breeds, including three dogs who also had a black mask. No consistent amino acid change was observed in the brindle dogs. All dogs with a melanistic mask had at least one copy of a valine substitution for methionine at amino acid 264 (M264V) and none were homozygous for the premature stop codon (R306ter). These results suggest that black mask, but not brindle, is caused by a specific MC1R allele.

Robust design of broadband EUV multilayer beam splitters based on particle swarm optimization

International Nuclear Information System (INIS)

Jiang, Hui; Michette, Alan G.

2013-01-01

A robust design idea for broadband EUV multilayer beam splitters is introduced that achieves the aim of decreasing the influence of layer thickness errors on optical performances. Such beam splitters can be used in interferometry to determine the quality of EUVL masks by comparing with a reference multilayer. In the optimization, particle swarm techniques were used for the first time in such designs. Compared to conventional genetic algorithms, particle swarm optimization has stronger ergodicity, simpler processing and faster convergence

An investigation into scalability and compliance for triple patterning with stitches for metal 1 at the 14nm node

Science.gov (United States)

Cork, Christopher; Miloslavsky, Alexander; Friedberg, Paul; Luk-Pat, Gerry

2013-04-01

Lithographers had hoped that single patterning would be enabled at the 20nm node by way of EUV lithography. However, due to delays in EUV readiness, double patterning with 193i lithography is currently relied upon for volume production for the 20nm node's metal 1 layer. At the 14nm and likely at the 10nm node, LE-LE-LE triple patterning technology (TPT) is one of the favored options [1,2] for patterning local interconnect and Metal 1 layers. While previous research has focused on TPT for contact mask, metal layers offer new challenges and opportunities, in particular the ability to decompose design polygons across more than one mask. The extra flexibility offered by the third mask and ability to leverage polygon stitching both serve to improve compliance. However, ensuring TPT compliance - the task of finding a 3-color mask decomposition for a design - is still a difficult task. Moreover, scalability concerns multiply the difficulty of triple patterning decomposition which is an NP-complete problem. Indeed previous work shows that network sizes above a few thousand nodes or polygons start to take significantly longer times to compute [3], making full chip decomposition for arbitrary layouts impractical. In practice Metal 1 layouts can be considered as two separate problem domains, namely: decomposition of standard cells and decomposition of IP blocks. Standard cells typically include only a few 10's of polygons and should be amenable to fast decomposition. Successive design iterations should resolve compliance issues and improve packing density. Density improvements are multiplied repeatedly as standard cells are placed multiple times. IP blocks, on the other hand, may involve very large networks. This paper evaluates multiple approaches to triple patterning decomposition for the Metal 1 layer. The benefits of polygon stitching, in particular, the ability to resolve commonly encountered non-compliant layout configurations and improve packing density, are weighed

Laser micromachined wax-covered plastic paper as both sputter deposition shadow masks and deep-ultraviolet patterning masks for polymethylmethacrylate-based microfluidic systems

KAUST Repository

Fan, Yiqiang; Li, Huawei; Yi, Ying; Foulds, Ian G.

2013-01-01

We report a technically innovative method of fabricating masks for both deep-ultraviolet (UV) patterning and metal sputtering on polymethylmethacrylate (PMMA) for microfluidic systems. We used a CO2 laser system to cut the required patterns on wax

Vector wave diffraction pattern of slits masked by polarizing devices

Indian Academy of Sciences (India)

This calls for a systematic study of diffraction properties of different apertures using polarization-sensitive devices. In the present paper, we have studied the Fraunhofer diffraction pattern of slits masked by different kinds of polarizing devices which introduce a phase difference between the two orthogonal components of the ...

Mask roughness and its implications for LER at the 22- and 16-nm nodes

Energy Technology Data Exchange (ETDEWEB)

Naulleau, Patrick; George, Simi A.; McClinton, Brittany M.

2010-02-16

Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks.

Science.gov (United States)

Ramakrishnan, Saminathan; Subramaniam, Sivaraman; Stewart, A Francis; Grundmeier, Guido; Keller, Adrian

2016-11-16

DNA origami has become a widely used method for synthesizing well-defined nanostructures with promising applications in various areas of nanotechnology, biophysics, and medicine. Recently, the possibility to transfer the shape of single DNA origami nanostructures into different materials via molecular lithography approaches has received growing interest due to the great structural control provided by the DNA origami technique. Here, we use ordered monolayers of DNA origami nanostructures with internal cavities on mica surfaces as molecular lithography masks for the fabrication of regular protein patterns over large surface areas. Exposure of the masked sample surface to negatively charged proteins results in the directed adsorption of the proteins onto the exposed surface areas in the holes of the mask. By controlling the buffer and adsorption conditions, the protein coverage of the exposed areas can be varied from single proteins to densely packed monolayers. To demonstrate the versatility of this approach, regular nanopatterns of four different proteins are fabricated: the single-strand annealing proteins Redβ and Sak, the iron-storage protein ferritin, and the blood protein bovine serum albumin (BSA). We furthermore demonstrate the desorption of the DNA origami mask after directed protein adsorption, which may enable the fabrication of hierarchical patterns composed of different protein species. Because selectivity in adsorption is achieved by electrostatic interactions between the proteins and the exposed surface areas, this approach may enable also the large-scale patterning of other charged molecular species or even nanoparticles.

Development of amorphous silicon based EUV hardmasks through physical vapor deposition

Science.gov (United States)

De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

2017-10-01

Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

What's in a mask? Information masking with forward and backward visual masks.

Science.gov (United States)

Davis, Chris; Kim, Jeesun

2011-10-01

Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.

Towards a contamination-tolerant EUV power sensor

NARCIS (Netherlands)

Veldhoven, J. van; Putten, M. van; Nieuwkoop, E.; Huijser, T.; Maas, D.J.

2015-01-01

In EUV Lithography short-, mid- and long-term control over in-band EUV power is needed for high-yield IC production. Existing sensors can be unstable over time due to contamination and/or degradation. TNO goal: to conceive a stable EUV power sensor. Sensitive to in-band EUV, negligible degradation,

Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy.

Science.gov (United States)

Lin, Jingquan; Weber, Nils; Escher, Matthias; Maul, Jochen; Han, Hak-Seung; Merkel, Michael; Wurm, Stefan; Schönhense, Gerd; Kleineberg, Ulf

2008-09-29

A photoemission electron microscope based on a new contrast mechanism "interference contrast" is applied to characterize extreme ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of standing wave field) on surface of multilayer in the local region of a phase defect is necessary to obtain best visibility of the defect on mask blank. A comparative experiment reveals superiority of the interference contrast photoemission electron microscope (Extreme UV illumination) over a topographic contrast one (UV illumination with Hg discharge lamp) in detecting extreme ultraviolet mask blank phase defects. A depth-resolved detection of a mask blank defect, either by measuring anti-node peak shift in the EUV-PEEM image under varying inspection wavelength condition or by counting interference fringes with a fixed illumination wavelength, is discussed.

Mask-free and programmable patterning of graphene by ultrafast laser direct writing

International Nuclear Information System (INIS)

Chen, Hao-Yan; Han, Dongdong; Tian, Ye; Shao, Ruiqiang; Wei, Shu

2014-01-01

Graphical abstract: - Highlights: • We present a mask-free and programmable patterning of graphene. • Ultrafast laser can homogeneously reduce graphene oxides into micropatterns. • Desired graphene micropatterns could be created on flexible substrates. • Laser exposure duration shows influence on the conductivity of reduced graphene. • The method holds promise for fabrication and integration of graphene electronics. - Abstract: Reported here is a mask-free and programmable patterning of graphene by using femtosecond laser direct writing on graphene oxide (GO) films. Take advantage of the ultrahigh instantaneous intensity of the femtosecond laser pulse, and especially its nonlinear interactions with materials, the GO could be efficiently reduced under atmospheric condition at room temperature. Moreover, the designability of femtosecond laser direct writing (FsLDW) technique allow making graphene micropatterns arbitrarily according to the preprogrammed structures, which provides the feasibility for rational design, flexible fabrication and integration of graphene-based micro-devices. Raman spectra show that the reduced and patterned region is very homogeneous, which is confirmed by the almost consistent I D /I G ratio. The novel graphene patterning technique would provide a technical support for the development of graphene-based micro-devices for future electronics

Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists

KAUST Repository

Jiang, Jing

2015-03-19

Ligand stabilized metal oxide nanoparticle resists are promising candidates for EUV lithography due to their high sensitivity for high-resolution patterning and high etching resistance. As ligand exchange is responsible for the patterning mechanism, we systematically studied the influence of ligand structures of metal oxide EUV nanoparticles on their sensitivity and dissolution behavior. ZrO2 nanoparticles were protected with various aromatic ligands with electron withdrawing and electron donating groups. These nanoparticles have lower sensitivity compared to those with aliphatic ligands suggesting the structures of these ligands is more important than their pka on resist sensitivity. The influence of ligand structure was further studied by comparing the nanoparticles’ solubility for a single type ligand to mixtures of ligands. The mixture of nanoparticles showed improved pattern quality. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Novel EUV resist materials design for 14nm half pitch and below

Science.gov (United States)

Tsubaki, Hideaki; Tarutani, Shinji; Fujimori, Toru; Takizawa, Hiroo; Goto, Takahiro

2014-04-01

Polymers with a different Tg and activation energy were prepared to clarify influences of acid diffusion on resolution at 15 nm half-pitch (hp) and 14 nm hp using a EUV micro-field exposure tool (MET) at LBNL. Resolution on such a narrow pattern was limited by collapse and pinching. Clear relationship between pinching numbers and polymer Tg indicates that acid diffusion is one of major contributors on the pinching. In addition, polymers with a low thermal activation energy (Ea) on deprotection were effective for reducing pinching. This is probably originated from its high chemically amplification character even in low post-exposure bake (PEB) temperature to obtain both large chemical contrast and short acid diffusion. On the other hand, a good correlation between a cleanable outgassing amount and Ea indicates trade-off relationship between outgassing and resolution. Advantages of n-butyl acetate (nBA) developer have been investigated in viewpoint of dissolution uniformity. Surface roughness of a non-patterned resist film at half-exposed area, which was well correlated with LWR, was measured by AFM as indicator of uniformity in development process. To avoid any differences in resist chemistry other than development process, cross linking negative tone resist was applied for this study. The surface roughness obtained by nBA, which is conventional negative-tone imaging (NTI) developer, was 32 % lower than that obtained by 2.38 % TMAH solution. NTI resist system with a nBA developer and optimized resist reduced LWR from 4.8 nm to 3.0 nm in comparison with conventional positive tone resist with a 2.38 % TMAH developer. In addition, advantage on semi-dense trench patterning was well defined. New EUV sensitizer with 1.15 times higher EUV absorption resulted in 1.15 times higher acid yield by EUV exposure. Lithography performance of the new EUV sensitizer has been investigated by MET at SEMATECH Albany. Sensitivity was indeed improved from 20 mJ/cm2 to 17 mJ/cm2 according

Patterning techniques for next generation IC's

Science.gov (United States)

Balasinski, A.

2007-12-01

Reduction of linear critical dimensions (CDs) beyond 45 nm would require significant increase of the complexity of pattern definition process. In this work, we discuss the key successor methodology to the current optical lithography, the Double Patterning Technique (DPT). We compare the complexity of CAD solutions, fab equipment, and wafer processing with its competitors, such as the nanoimprint (NIL) and the extreme UV (EUV) techniques. We also look ahead to the market availability for the product families enabled using the novel patterning solutions. DPT is often recognized as the most viable next generation lithography as it utilizes the existing equipment and processes and is considered a stop-gap solution before the advanced NIL or EUV equipment is developed. Using design for manufacturability (DfM) rules, DPT can drive the k1 factor down to 0.13. However, it faces a variety of challenges, from new mask overlay strategies, to layout pattern split, novel OPC, increased CD tolerances, new etch techniques, as well as long processing time, all of which compromise its return on investment (RoI). In contrast, it can be claimed e.g., that the RoI is the highest for the NIL but this technology bears significant risk. For all novel patterning techniques, the key questions remain: when and how should they be introduced, what is their long-term potential, when should they be replaced, and by what successor technology. We summarize the unpublished results of several panel discussions on DPT at the recent SPIE/BACUS conferences.

Image differencing using masked CCD

International Nuclear Information System (INIS)

Rushbrooke, J.G.; Ansorge, R.E.; Webber, C.J. St. J.

1987-01-01

A charge coupled device has some of its ''pixels'' masked by a material which is opaque to the radiation to which the device is to be exposed, each masked region being employed as a storage zone into which the charge pattern from the unmasked pixels can be transferred to enable a subsequent charge pattern to be established on further exposure of the unmasked pixels. The components of the resulting video signal corresponding to the respective charge patterns read-out from the CCD are subtracted to produce a video signal corresponding to the difference between the two images which formed the respective charge patterns. Alternate rows of pixels may be masked, or chequer-board pattern masking may be employed. In an X-ray imaging system the CCD is coupled to image intensifying and converting means. (author)

Rapid Stencil Mask Fabrication Enabled One-Step Polymer-Free Graphene Patterning and Direct Transfer for Flexible Graphene Devices.

Science.gov (United States)

Yong, Keong; Ashraf, Ali; Kang, Pilgyu; Nam, SungWoo

2016-04-27

We report a one-step polymer-free approach to patterning graphene using a stencil mask and oxygen plasma reactive-ion etching, with a subsequent polymer-free direct transfer for flexible graphene devices. Our stencil mask is fabricated via a subtractive, laser cutting manufacturing technique, followed by lamination of stencil mask onto graphene grown on Cu foil for patterning. Subsequently, micro-sized graphene features of various shapes are patterned via reactive-ion etching. The integrity of our graphene after patterning is confirmed by Raman spectroscopy. We further demonstrate the rapid prototyping capability of a stretchable, crumpled graphene strain sensor and patterned graphene condensation channels for potential applications in sensing and heat transfer, respectively. We further demonstrate that the polymer-free approach for both patterning and transfer to flexible substrates allows the realization of cleaner graphene features as confirmed by water contact angle measurements. We believe that our new method promotes rapid, facile fabrication of cleaner graphene devices, and can be extended to other two dimensional materials in the future.

Update on EUV radiometry at PTB

Science.gov (United States)

Laubis, Christian; Barboutis, Annett; Buchholz, Christian; Fischer, Andreas; Haase, Anton; Knorr, Florian; Mentzel, Heiko; Puls, Jana; Schönstedt, Anja; Sintschuk, Michael; Soltwisch, Victor; Stadelhoff, Christian; Scholze, Frank

2016-03-01

The development of technology infrastructure for EUV Lithography (EUVL) still requires higher levels of technology readiness in many fields. A large number of new materials will need to be introduced. For example, development of EUV compatible pellicles to adopt an approved method from optical lithography for EUVL needs completely new thin membranes which have not been available before. To support these developments, PTB with its decades of experience [1] in EUV metrology [2] provides a wide range of actinic and non actinic measurements at in-band EUV wavelengths as well as out of band. Two dedicated, complimentary EUV beamlines [3] are available for radiometric [4,5] characterizations benefiting from small divergence or from adjustable spot size respectively. The wavelength range covered reaches from below 1 nm to 45 nm [6] for the EUV beamlines [7] to longer wavelengths if in addition the VUV beamline is employed. The standard spot size is 1 mm by 1 mm with an option to go as low as 0.1 mm to 0.1 mm. A separate beamline offers an exposure setup. Exposure power levels of 20 W/cm2 have been employed in the past, lower fluencies are available by attenuation or out of focus exposure. Owing to a differential pumping stage, the sample can be held under defined gas conditions during exposure. We present an updated overview on our instrumentation and analysis capabilities for EUV metrology and provide data for illustration.

High resolution shadow mask patterning in deep holes and its application to an electrical wafer feed-through

NARCIS (Netherlands)

Burger, G.J.; Burger, G.J.; Smulders, E.J.T.; Berenschot, Johan W.; Lammerink, Theodorus S.J.; Fluitman, J.H.J.; Imai, S.

1995-01-01

This paper presents a technique to pattern materials in deep holes and/or on non-planar substrate surfaces. A rather old technique, E-beam evaporation of metals through a shadow mask, is used [1]. The realisation of high resolution shadow masks using micromachining techniques is described. Further,

Interaction of Object Binding Cues in Binaural Masking Pattern Experiments.

Science.gov (United States)

Verhey, Jesko L; Lübken, Björn; van de Par, Steven

2016-01-01

Object binding cues such as binaural and across-frequency modulation cues are likely to be used by the auditory system to separate sounds from different sources in complex auditory scenes. The present study investigates the interaction of these cues in a binaural masking pattern paradigm where a sinusoidal target is masked by a narrowband noise. It was hypothesised that beating between signal and masker may contribute to signal detection when signal and masker do not spectrally overlap but that this cue could not be used in combination with interaural cues. To test this hypothesis an additional sinusoidal interferer was added to the noise masker with a lower frequency than the noise whereas the target had a higher frequency than the noise. Thresholds increase when the interferer is added. This effect is largest when the spectral interferer-masker and masker-target distances are equal. The result supports the hypothesis that modulation cues contribute to signal detection in the classical masking paradigm and that these are analysed with modulation bandpass filters. A monaural model including an across-frequency modulation process is presented that account for this effect. Interestingly, the interferer also affects dichotic thresholds indicating that modulation cues also play a role in binaural processing.

EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

Science.gov (United States)

Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

2018-01-01

The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

Dry etching technologies for reflective multilayer

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Ionospheric Change and Solar EUV Irradiance

Science.gov (United States)

Sojka, J. J.; David, M.; Jensen, J. B.; Schunk, R. W.

2011-12-01

The ionosphere has been quantitatively monitored for the past six solar cycles. The past few years of observations are showing trends that differ from the prior cycles! Our good statistical relationships between the solar radio flux index at 10.7 cm, the solar EUV Irradiance, and the ionospheric F-layer peak density are showing indications of divergence! Present day discussion of the Sun-Earth entering a Dalton Minimum would suggest change is occurring in the Sun, as the driver, followed by the Earth, as the receptor. The dayside ionosphere is driven by the solar EUV Irradiance. But different components of this spectrum affect the ionospheric layers differently. For a first time the continuous high cadence EUV spectra from the SDO EVE instrument enable ionospheric scientists the opportunity to evaluate solar EUV variability as a driver of ionospheric variability. A definitive understanding of which spectral components are responsible for the E- and F-layers of the ionosphere will enable assessments of how over 50 years of ionospheric observations, the solar EUV Irradiance has changed. If indeed the evidence suggesting the Sun-Earth system is entering a Dalton Minimum periods is correct, then the comprehensive EVE solar EUV Irradiance data base combined with the ongoing ionospheric data bases will provide a most fortuitous fiduciary reference baseline for Sun-Earth dependencies. Using the EVE EUV Irradiances, a physics based ionospheric model (TDIM), and 50 plus years of ionospheric observation from Wallops Island (Virginia) the above Sun-Earth ionospheric relationship will be reported on.

Analytical techniques for mechanistic characterization of EUV photoresists

Science.gov (United States)

Grzeskowiak, Steven; Narasimhan, Amrit; Murphy, Michael; Ackerman, Christian; Kaminsky, Jake; Brainard, Robert L.; Denbeaux, Greg

2017-03-01

Extreme ultraviolet (EUV, 13.5 nm) lithography is the prospective technology for high volume manufacturing by the microelectronics industry. Significant strides towards achieving adequate EUV source power and availability have been made recently, but a limited rate of improvement in photoresist performance still delays the implementation of EUV. Many fundamental questions remain to be answered about the exposure mechanisms of even the relatively well understood chemically amplified EUV photoresists. Moreover, several groups around the world are developing revolutionary metal-based resists whose EUV exposure mechanisms are even less understood. Here, we describe several evaluation techniques to help elucidate mechanistic details of EUV exposure mechanisms of chemically amplified and metal-based resists. EUV absorption coefficients are determined experimentally by measuring the transmission through a resist coated on a silicon nitride membrane. Photochemistry can be evaluated by monitoring small outgassing reaction products to provide insight into photoacid generator or metal-based resist reactivity. Spectroscopic techniques such as thin-film Fourier transform infrared (FTIR) spectroscopy can measure the chemical state of a photoresist system pre- and post-EUV exposure. Additionally, electrolysis can be used to study the interaction between photoresist components and low energy electrons. Collectively, these techniques improve our current understanding of photomechanisms for several EUV photoresist systems, which is needed to develop new, better performing materials needed for high volume manufacturing.

Solar EUV irradiance for space weather applications

Science.gov (United States)

Viereck, R. A.

2015-12-01

Solar EUV irradiance is an important driver of space weather models. Large changes in EUV and x-ray irradiances create large variability in the ionosphere and thermosphere. Proxies such as the F10.7 cm radio flux, have provided reasonable estimates of the EUV flux but as the space weather models become more accurate and the demands of the customers become more stringent, proxies are no longer adequate. Furthermore, proxies are often provided only on a daily basis and shorter time scales are becoming important. Also, there is a growing need for multi-day forecasts of solar EUV irradiance to drive space weather forecast models. In this presentation we will describe the needs and requirements for solar EUV irradiance information from the space weather modeler's perspective. We will then translate these requirements into solar observational requirements such as spectral resolution and irradiance accuracy. We will also describe the activities at NOAA to provide long-term solar EUV irradiance observations and derived products that are needed for real-time space weather modeling.

Reflective masks for extreme ultraviolet lithography

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Khanh Bao [Univ. of California, Berkeley, CA (United States)

1994-05-01

Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

Surface roughness control by extreme ultraviolet (EUV) radiation

Science.gov (United States)

Ahad, Inam Ul; Obeidi, Muhannad Ahmed; Budner, Bogusław; Bartnik, Andrzej; Fiedorowicz, Henryk; Brabazon, Dermot

2017-10-01

Surface roughness control of polymeric materials is often desirable in various biomedical engineering applications related to biocompatibility control, separation science and surface wettability control. In this study, Polyethylene terephthalate (PET) polymer films were irradiated with Extreme ultraviolet (EUV) photons in nitrogen environment and investigations were performed on surface roughness modification via EUV exposure. The samples were irradiated at 3 mm and 4 mm distance from the focal spot to investigate the effect of EUV fluence on topography. The topography of the EUV treated PET samples were studied by AFM. The detailed scanning was also performed on the sample irradiated at 3 mm. It was observed that the average surface roughness of PET samples was increased from 9 nm (pristine sample) to 280 nm and 253 nm for EUV irradiated samples. Detailed AFM studies confirmed the presence of 1.8 mm wide period U-shaped channels in EUV exposed PET samples. The walls of the channels were having FWHM of about 0.4 mm. The channels were created due to translatory movements of the sample in horizontal and transverse directions during the EUV exposure. The increased surface roughness is useful for many applications. The nanoscale channels fabricated by EUV exposure could be interesting for microfluidic applications based on lab-on-a-chip (LOC) devices.

Evaluation of EUV resist performance using interference lithography

Science.gov (United States)

Buitrago, E.; Yildirim, O.; Verspaget, C.; Tsugama, N.; Hoefnagels, R.; Rispens, G.; Ekinci, Y.

2015-03-01

Extreme ultraviolet lithography (EUVL) stands as the most promising solution for the fabrication of future technology nodes in the semiconductor industry. Nonetheless, the successful introduction of EUVL into the extremely competitive and stringent high-volume manufacturing (HVM) phase remains uncertain partly because of the still limiting performance of EUV resists below 16 nm half-pitch (HP) resolution. Particularly, there exists a trade-off relationship between resolution (half-pitch), sensitivity (dose) and line-edge roughness (LER) that can be achieved with existing materials. This trade-off ultimately hampers their performance and extendibility towards future technology nodes. Here we present a comparative study of highly promising chemically amplified resists (CARs) that have been evaluated using the EUV interference lithography (EUV-IL) tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). In this study we have focused on the performance qualification of different resists mainly for 18 nm and 16 nm half-pitch line/space resolution (L/S = 1:1). Among the most promising candidates tested, there are a few choices that allow for 16 nm HP resolution to be achieved with high exposure latitude (up to ~ 33%), low LER (down to 3.3 nm or ~ 20% of critical dimension CD) and low dose-to-size (or best-energy, BE) < 41 mJ/cm2 values. Patterning was even demonstrated down to 12 nm HP with one of CARs (R1UL1) evaluated for their extendibility beyond the 16 nm HP resolution. 11 nm HP patterning with some pattern collapse and well resolved patterns down 12 nm were also demonstrated with another CAR (R15UL1) formulated for 16 nm HP resolution and below. With such resist it was possible even to obtain a small process window for 14 nm HP processing with an EL ~ 8% (BE ~ 37 mJ/cm2, LER ~ 4.5 nm). Though encouraging, fulfilling all of the requirements necessary for high volume production, such as high resolution, low LER, high photon

Overlay improvement by exposure map based mask registration optimization

Science.gov (United States)

Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

2015-03-01

Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density

Design and fabrication of advanced EUV diffractive elements

Energy Technology Data Exchange (ETDEWEB)

Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

2003-11-16

As extreme ultraviolet (EUV) lithography approaches commercial reality, the development of EUV-compatible diffractive structures becomes increasingly important. Such devices are relevant to many aspects of EUV technology including interferometry, illumination, and spectral filtering. Moreover, the current scarcity of high power EUV sources makes the optical efficiency of these diffractive structures a paramount concern. This fact has led to a strong interest in phase-enhanced diffractive structures. Here we describe recent advancements made in the fabrication of such devices.

Direct EUV/X-Ray Modulation of the Ionosphere During the August 2017 Total Solar Eclipse

Science.gov (United States)

Mrak, Sebastijan; Semeter, Joshua; Drob, Douglas; Huba, J. D.

2018-05-01

The great American total solar eclipse of 21 August 2017 offered a fortuitous opportunity to study the response of the atmosphere and ionosphere using a myriad of ground instruments. We have used the network of U.S. Global Positioning System receivers to examine perturbations in maps of ionospheric total electron content (TEC). Coherent large-scale variations in TEC have been interpreted by others as gravity wave-induced traveling ionospheric disturbances. However, the solar disk had two active regions at that time, one near the center of the disk and one at the edge, which resulted in an irregular illumination pattern in the extreme ultraviolet (EUV)/X-ray bands. Using detailed EUV occultation maps calculated from the National Aeronautics and Space Administration Solar Dynamics Observatory Atmospheric Imaging Assembly images, we show excellent agreement between TEC perturbations and computed gradients in EUV illumination. The results strongly suggest that prominent large-scale TEC disturbances were consequences of direct EUV modulation, rather than gravity wave-induced traveling ionospheric disturbances.

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and

The lithographer's dilemma: shrinking without breaking the bank

Science.gov (United States)

Levinson, Harry J.

2013-10-01

It can no longer be assumed that the lithographic scaling which has previously driven Moore's Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

EUV laser produced and induced plasmas for nanolithography

Science.gov (United States)

Sizyuk, Tatyana; Hassanein, Ahmed

2017-10-01

EUV produced plasma sources are being extensively studied for the development of new technology for computer chips production. Challenging tasks include optimization of EUV source efficiency, producing powerful source in 2 percentage bandwidth around 13.5 nm for high volume manufacture (HVM), and increasing the lifetime of collecting optics. Mass-limited targets, such as small droplet, allow to reduce contamination of chamber environment and mirror surface damage. However, reducing droplet size limits EUV power output. Our analysis showed the requirement for the target parameters and chamber conditions to achieve 500 W EUV output for HVM. The HEIGHTS package was used for the simulations of laser produced plasma evolution starting from laser interaction with solid target, development and expansion of vapor/plasma plume with accurate optical data calculation, especially in narrow EUV region. Detailed 3D modeling of mix environment including evolution and interplay of plasma produced by lasers from Sn target and plasma produced by in-band and out-of-band EUV radiation in ambient gas, used for the collecting optics protection and cleaning, allowed predicting conditions in entire LPP system. Effect of these conditions on EUV photon absorption and collection was analyzed. This work is supported by the National Science Foundation, PIRE project.

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

Science.gov (United States)

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Effect of mask dead space and occlusion of mask holes on delivery of nebulized albuterol.

Science.gov (United States)

Berlinski, Ariel

2014-08-01

Infants and children with respiratory conditions are often prescribed bronchodilators. Face masks are used to facilitate the administration of nebulized therapy in patients unable to use a mouthpiece. Masks incorporate holes into their design, and their occlusion during aerosol delivery has been a common practice. Masks are available in different sizes and different dead volumes. The aim of this study was to compare the effect of different degrees of occlusion of the mask holes and different mask dead space on the amount of nebulized albuterol available at the mouth opening in a model of a spontaneously breathing child. A breathing simulator mimicking infant (tidal volume [VT] = 50 mL, breathing frequency = 30 breaths/min, inspiratory-expiratory ratio [I:E] = 1:3), child (VT = 155 mL, breathing frequency = 25 breaths/min, I:E = 1:2), and adult (VT = 500 mL, breathing frequency = 15 breaths/min, I:E = 1:2) breathing patterns was connected to a collection filter hidden behind a face plate. A pediatric size mask and an adult size mask connected to a continuous output jet nebulizer were sealed to the face plate. Three nebulizers were loaded with albuterol sulfate (2.5 mg/3 mL) and operated with 6 L/min compressed air for 5 min. Experiments were repeated with different degrees of occlusion (0%, 50%, and 90%). Albuterol was extracted from the filter and measured with a spectrophotometer at 276 nm. Occlusion of the holes in the large mask did not increase the amount of albuterol in any of the breathing patterns. The amount of albuterol captured at the mouth opening did not change when the small mask was switched to the large mask, except with the breathing pattern of a child, and when the holes in the mask were 50% occluded (P = .02). Neither decreasing the dead space of the mask nor occluding the mask holes increased the amount of nebulized albuterol captured at the mouth opening.

Photolithography-free laser-patterned HF acid-resistant chromium-polyimide mask for rapid fabrication of microfluidic systems in glass

International Nuclear Information System (INIS)

Zamuruyev, Konstantin O; Zrodnikov, Yuriy; Davis, Cristina E

2017-01-01

Excellent chemical and physical properties of glass, over a range of operating conditions, make it a preferred material for chemical detection systems in analytical chemistry, biology, and the environmental sciences. However, it is often compromised with SU8, PDMS, or Parylene materials due to the sophisticated mask preparation requirements for wet etching of glass. Here, we report our efforts toward developing a photolithography-free laser-patterned hydrofluoric acid-resistant chromium-polyimide tape mask for rapid prototyping of microfluidic systems in glass. The patterns are defined in masking layer with a diode-pumped solid-state laser. Minimum feature size is limited to the diameter of the laser beam, 30 µ m; minimum spacing between features is limited by the thermal shrinkage and adhesive contact of the polyimide tape to 40 µ m. The patterned glass substrates are etched in 49% hydrofluoric acid at ambient temperature with soft agitation (in time increments, up to 60 min duration). In spite of the simplicity, our method demonstrates comparable results to the other current more sophisticated masking methods in terms of the etched depth (up to 300 µ m in borosilicate glass), feature under etch ratio in isotropic etch (∼1.36), and low mask hole density. The method demonstrates high yield and reliability. To our knowledge, this method is the first proposed technique for rapid prototyping of microfluidic systems in glass with such high performance parameters. The proposed method of fabrication can potentially be implemented in research institutions without access to a standard clean-room facility. (paper)

The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

Science.gov (United States)

Hector, Scott

2005-11-01

The extension of optical projection lithography through immersion to patterning features with half pitch face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

Reusable High Aspect Ratio 3-D Nickel Shadow Mask

Science.gov (United States)

Shandhi, M.M.H.; Leber, M.; Hogan, A.; Warren, D.J.; Bhandari, R.; Negi, S.

2017-01-01

Shadow Mask technology has been used over the years for resistless patterning and to pattern on unconventional surfaces, fragile substrate and biomaterial. In this work, we are presenting a novel method to fabricate high aspect ratio (15:1) three-dimensional (3D) Nickel (Ni) shadow mask with vertical pattern length and width of 1.2 mm and 40 μm respectively. The Ni shadow mask is 1.5 mm tall and 100 μm wide at the base. The aspect ratio of the shadow mask is 15. Ni shadow mask is mechanically robust and hence easy to handle. It is also reusable and used to pattern the sidewalls of unconventional and complex 3D geometries such as microneedles or neural electrodes (such as the Utah array). The standard Utah array has 100 active sites at the tip of the shaft. Using the proposed high aspect ratio Ni shadow mask, the Utah array can accommodate 300 active sites, 200 of which will be along and around the shaft. The robust Ni shadow mask is fabricated using laser patterning and electroplating techniques. The use of Ni 3D shadow mask will lower the fabrication cost, complexity and time for patterning out-of-plane structures. PMID:29056835

Random mask optimization for fast neutron coded aperture imaging

Energy Technology Data Exchange (ETDEWEB)

McMillan, Kyle [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Univ. of California, Los Angeles, CA (United States); Marleau, Peter [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Brubaker, Erik [Sandia National Lab. (SNL-CA), Livermore, CA (United States)

2015-05-01

In coded aperture imaging, one of the most important factors determining the quality of reconstructed images is the choice of mask/aperture pattern. In many applications, uniformly redundant arrays (URAs) are widely accepted as the optimal mask pattern. Under ideal conditions, thin and highly opaque masks, URA patterns are mathematically constructed to provide artifact-free reconstruction however, the number of URAs for a chosen number of mask elements is limited and when highly penetrating particles such as fast neutrons and high-energy gamma-rays are being imaged, the optimum is seldom achieved. In this case more robust mask patterns that provide better reconstructed image quality may exist. Through the use of heuristic optimization methods and maximum likelihood expectation maximization (MLEM) image reconstruction, we show that for both point and extended neutron sources a random mask pattern can be optimized to provide better image quality than that of a URA.

Low-defect reflective mask blanks for extreme ultraviolet lithography

International Nuclear Information System (INIS)

Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Ray-Chaudhuri, A; Walton, C.

1999-01-01

Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA road map well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm ampersand sup2; at sign 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm ampersand sup2; for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm ampersand sup2; in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10 -2 /cm ampersand sup2; level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling

Extreme ultraviolet patterning of tin-oxo cages

Science.gov (United States)

Haitjema, Jarich; Zhang, Yu; Vockenhuber, Michaela; Kazazis, Dimitrios; Ekinci, Yasin; Brouwer, Albert M.

2017-07-01

We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These cage molecules were already known to function as a negative tone photoresist for EUV radiation, but in this work, we significantly optimized their performance. Our results show that sensitivity and resolution are only meaningful photoresist parameters if the process conditions are optimized. We focus on contrast curves of the materials using large area EUV exposures and patterning of the cages using EUV interference lithography. It is shown that baking steps, such as postexposure baking, can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. A layer thickness increase reduced the necessary dose to induce a solubility change but decreased the patterning quality. The patterning experiments were affected by minor changes in processing conditions such as an increased rinsing time. In addition, we show that the anions of the cage can influence the sensitivity and quality of the patterning, probably through their effect on physical properties of the materials.

Generation of mask patterns for diffractive optical elements using MathematicaTM

International Nuclear Information System (INIS)

OShea, D.C.

1996-01-01

The generation of binary and grayscale masks used in the fabrication of diffractive optical elements is usually performed using a proprietary piece of software or a computer-aided drafting package. Once the pattern is computed or designed, it must be output to a plotting or imaging system that will produce a reticle plate. This article describes a number of short Mathematica modules that can be used to generate binary and grayscale patterns in a PostScript-compatible format. Approaches to ensure that the patterns are directly related to the function of the element and the design wavelength are discussed. A procedure to preserve the scale of the graphic output when it is transferred to another application is given. Examples of surfaces for a 100 mm effective focal length lens and an Alvarez surface are given. copyright 1996 American Institute of Physics

First environmental data from the EUV engineering test stand

Science.gov (United States)

Klebanoff, Leonard E.; Malinowski, Michael E.; Grunow, Philip A.; Clift, W. Miles; Steinhaus, Chip; Leung, Alvin H.; Haney, Steven J.

2001-08-01

The first environmental data from the Engineering Test Stand (ETS) has been collected. Excellent control of high-mass hydrocarbons has been observed. This control is a result of extensive outgas testing of components and materials, vacuum compatible design of the ETS, careful cleaning of parts and pre-baking of cables and sub assemblies where possible, and clean assembly procedures. As a result of the hydrocarbon control, the residual ETS vacuum environment is rich in water vapor. Analysis of witness plate data indicates that the ETS environment does not pose a contamination risk to the optics in the absence of EUV irradiation. However, with EUV exposure, the water rich environment can lead to EUV- induced water oxidation of the Si-terminated Mo/Si optics. Added ethanol can prevent optic oxidation, allowing carbon growth via EUV cracking of low-level residual hydrocarbons to occur. The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable.

Spectro-temporal modulation masking patterns reveal frequency selectivity.

Science.gov (United States)

Oetjen, Arne; Verhey, Jesko L

2015-02-01

The present study investigated the possibility that the human auditory system demonstrates frequency selectivity to spectro-temporal amplitude modulations. Threshold modulation depth for detecting sinusoidal spectro-temporal modulations was measured using a generalized masked threshold pattern paradigm with narrowband masker modulations. Four target spectro-temporal modulations were examined, differing in their temporal and spectral modulation frequencies: a temporal modulation of -8, 8, or 16 Hz combined with a spectral modulation of 1 cycle/octave and a temporal modulation of 4 Hz combined with a spectral modulation of 0.5 cycles/octave. The temporal center frequencies of the masker modulation ranged from 0.25 to 4 times the target temporal modulation. The spectral masker-modulation center-frequencies were 0, 0.5, 1, 1.5, and 2 times the target spectral modulation. For all target modulations, the pattern of average thresholds for the eight normal-hearing listeners was consistent with the hypothesis of a spectro-temporal modulation filter. Such a pattern of modulation-frequency sensitivity was predicted on the basis of psychoacoustical data for purely temporal amplitude modulations and purely spectral amplitude modulations. An analysis of separability indicates that, for the present data set, selectivity in the spectro-temporal modulation domain can be described by a combination of a purely spectral and a purely temporal modulation filter function.

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

Science.gov (United States)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

printability of defects at wafer level and automates the process of defect dispositioning from images captured using high resolution inspection machine. It first eliminates false defects due to registration, focus errors, image capture errors and random noise caused during inspection. For the remaining real defects, actual mask-like contours are generated using the Calibre® ILT solution [1][2], which is enhanced to predict the actual mask contours from high resolution defect images. It enables accurate prediction of defect contours, which is not possible from images captured using inspection machine because some information is already lost due to optical effects. Calibre's simulation engine is used to generate images at wafer level using scanner optical conditions and mask-like contours as input. The tool then analyses simulated images and predicts defect printability. It automatically calculates maximum CD variation and decides which defects are severe to affect patterns on wafer. In this paper, we assess the printability of defects for the mask of advanced technology nodes. In particular, we will compare the recovered mask contours with contours extracted from SEM image of the mask and compare simulation results with AIMSTM for a variety of defects and patterns. The results of printability assessment and the accuracy of comparison are presented in this paper. We also suggest how this method can be extended to predict printability of defects identified on EUV photomasks.

Computing Challenges in Coded Mask Imaging

Science.gov (United States)

Skinner, Gerald

2009-01-01

This slide presaentation reviews the complications and challenges in developing computer systems for Coded Mask Imaging telescopes. The coded mask technique is used when there is no other way to create the telescope, (i.e., when there are wide fields of view, high energies for focusing or low energies for the Compton/Tracker Techniques and very good angular resolution.) The coded mask telescope is described, and the mask is reviewed. The coded Masks for the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL) instruments are shown, and a chart showing the types of position sensitive detectors used for the coded mask telescopes is also reviewed. Slides describe the mechanism of recovering an image from the masked pattern. The correlation with the mask pattern is described. The Matrix approach is reviewed, and other approaches to image reconstruction are described. Included in the presentation is a review of the Energetic X-ray Imaging Survey Telescope (EXIST) / High Energy Telescope (HET), with information about the mission, the operation of the telescope, comparison of the EXIST/HET with the SWIFT/BAT and details of the design of the EXIST/HET.

EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV?

Science.gov (United States)

Gabor, Allen H.; Brendler, Andrew C.; Brunner, Timothy A.; Chen, Xuemei; Culp, James A.; Levinson, Harry J.

2018-03-01

The relationship between edge placement error, semiconductor design-rule determination and predicted yield in the era of EUV lithography is examined. This paper starts with the basics of edge placement error and then builds up to design-rule calculations. We show that edge placement error (EPE) definitions can be used as the building blocks for design-rule equations but that in the last several years the term "EPE" has been used in the literature to refer to many patterning errors that are not EPE. We then explore the concept of "Good Fields"1 and use it predict the n-sigma value needed for design-rule determination. Specifically, fundamental yield calculations based on the failure opportunities per chip are used to determine at what n-sigma "value" design-rules need to be tested to ensure high yield. The "value" can be a space between two features, an intersect area between two features, a minimum area of a feature, etc. It is shown that across chip variation of design-rule important values needs to be tested at sigma values between seven and eight which is much higher than the four-sigma values traditionally used for design-rule determination. After recommending new statistics be used for design-rule calculations the paper examines the impact of EUV lithography on sources of variation important for design-rule calculations. We show that stochastics can be treated as an effective dose variation that is fully sampled across every chip. Combining the increased within chip variation from EUV with the understanding that across chip variation of design-rule important values needs to not cause a yield loss at significantly higher sigma values than have traditionally been looked at, the conclusion is reached that across-wafer, wafer-to-wafer and lot-to-lot variation will have to overscale for any technology introducing EUV lithography where stochastic noise is a significant fraction of the effective dose variation. We will emphasize stochastic effects on edge placement

Enhancing native defect sensitivity for EUV actinic blank inspection: optimized pupil engineering and photon noise study

Science.gov (United States)

Wang, Yow-Gwo; Neureuther, Andrew; Naulleau, Patrick

2016-03-01

In this paper, we discuss the impact of optimized pupil engineering and photon noise on native defect sensitivity in EUV actinic blank inspection. Native defects include phase-dominated defects, absorber defects, and defects with a combination of phase and absorption behavior. First, we extend the idea of the Zernike phase contrast (ZPC) method and study the impact of optimum phase shift in the pupil plane on native defect sensitivity, showing a 23% signal-to-noise ratio (SNR) enhancement compare to bright field (BF) for a phase defect with 20% absorption. We also describe the possibility to increase target defect SNR on target defect sizes at the price of losing the sensitivity on smaller (non-critical) defects. Moreover, we show the advantage of the optimized phase contrast (OZPC) method over BF EUV actinic blank inspection. A single focus scan from OZPC has better inspection efficiency over BF. Second, we make a detailed comparison between the phase contrast with apodization (AZPC) method and dark field (DF) method based on defect sensitivity in the presence of both photon shot noise and camera noise. Performance is compared for a variety of photon levels, mask roughness conditions, and combinations of defect phase and absorption.

Robust source and mask optimization compensating for mask topography effects in computational lithography.

Science.gov (United States)

Li, Jia; Lam, Edmund Y

2014-04-21

Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.

Silver nanowires as the current collector for a flexible in-plane micro-supercapacitor via a one-step, mask-free patterning strategy

Science.gov (United States)

Liu, Lang; Li, Han-Yu; Yu, Yao; Liu, Lin; Wu, Yue

2018-02-01

The fabrication of a current collector-contained in-plane micro-supercapacitor (MSC) usually requires the patterning of the current collector first and then subsequent patterning of the active material with the assistance of a photoresist and mask. However, this two-step patterning process is too complicated and the photoresist used is harmful to the properties of nanomaterials. Here, we demonstrate a one-step, mask-free strategy to pattern the current collector and the active material at the same time, for the fabrication of an all-solid-state flexible in-plane MSC. Silver nanowires (AgNWs) are used as the current collector. An atmospheric pressure pulsed cold micro-plasma-jet is used to realize the one-step, mask-free production of interdigitated multi-walled carbon nanotube (MWCNT)/AgNW electrodes. Remarkably, the fabricated MWCNT/AgNW-based MSC shows good flexibility and excellent rate capability. Moreover, the performance of properties including cyclic stability, equivalent series resistance, relaxation time and energy/power densities of the MWCNT/AgNW-based MSC are significantly enhanced by the presence of the AgNW current collector.

Extreme Ultraviolet (EUV) induced surface chemistry on Ru

NARCIS (Netherlands)

Liu, Feng; Sturm, Jacobus Marinus; Lee, Christopher James; Bijkerk, Frederik

2013-01-01

EUV photon induced surface chemistry can damage multilayer mirrors causing reflectivity loss and faster degradation. EUV photo chemistry involves complex processes including direct photon induced surface chemistry and secondary electron radiation chemistry. Current cleaning techniques include dry

EUV tools: hydrogen gas purification and recovery strategies

Science.gov (United States)

Landoni, Cristian; Succi, Marco; Applegarth, Chuck; Riddle Vogt, Sarah

2015-03-01

The technological challenges that have been overcome to make extreme ultraviolet lithography (EUV) a reality have been enormous1. This vacuum driven technology poses significant purity challenges for the gases employed for purging and cleaning the scanner EUV chamber and source. Hydrogen, nitrogen, argon and ultra-high purity compressed dry air (UHPCDA) are the most common gases utilized at the scanner and source level. Purity requirements are tighter than for previous technology node tools. In addition, specifically for hydrogen, EUV tool users are facing not only gas purity challenges but also the need for safe disposal of the hydrogen at the tool outlet. Recovery, reuse or recycling strategies could mitigate the disposal process and reduce the overall tool cost of operation. This paper will review the types of purification technologies that are currently available to generate high purity hydrogen suitable for EUV applications. Advantages and disadvantages of each purification technology will be presented. Guidelines on how to select the most appropriate technology for each application and experimental conditions will be presented. A discussion of the most common approaches utilized at the facility level to operate EUV tools along with possible hydrogen recovery strategies will also be reported.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

Science.gov (United States)

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Determination of the CD performance and carbon contamination of an EUV mask by using a coherent scattering microscopy/in-situ contamination system

International Nuclear Information System (INIS)

Doh, Jonggul; Jeong, Changyoung; Lee, Sangsul; Lee, Jaeuk; Cha, Hansun; Ahn, Jinho; Lee, Donggun; Kim, Seongsue; Cho, Hanku; Rah, Seungyu

2010-01-01

The impact of carbon contamination on imaging performance was analyzed using an in-situ accelerated contamination system (ICS) combined with coherent scattering microscopy (CSM) at the 11B extreme ultraviolet lithography (EUVL) beamline of the Pohang Accelerator Laboratory (PAL). The CSM/ICS is composed of the CSM for measuring imaging properties and the ICS for accelerating the carbon contamination. The CD (critical dimension) and the reflectivity of the mask were compared before and after carbon contamination through acceleration exposure. The reflectivity degradation was 1.3%, 2.1%, and 2.5% after 1-, 2-, and 3-hour exposures, respectively, due to carbon contamination of 5, 10, and 20 nm as measured by using a Zygo interferometer. The mask CD change of an 88-nm line and space pattern was analyzed using CSM and CD SEM (scanning electron microscope), and the result showed a similar trend, but a different absolute value. This difference confirmed the importance of the actinic inspection technique, which employs exactly the same imaging condition as the exposure tool.

Patterning 45nm flash/DRAM contact hole mask with hyper-NA immersion lithography and optimized illumination

Science.gov (United States)

Chen, Ting; Van Den Broeke, Doug; Hsu, Stephen; Park, Sangbong; Berger, Gabriel; Coskun, Tamer; de Vocht, Joep; Corcoran, Noel; Chen, Fung; van der Heijden, Eddy; Finders, Jo; Engelen, Andre; Socha, Robert

2006-03-01

Patterning contact-hole mask for Flash/DRAM is probably one of the most challenging tasks for design rule below 50nm due to the extreme low-k I printing conditions common in the memory designs. When combined with optical proximity corrections (OPC) to the mask, using optimized illumination has become a viable part of the production lithography process for 65nm node. At k Ipitch design rules. Here we use 6% attPSM mask for simulation and actual exposure in ASML XT 1400i (NA=0.93) and 1700i (NA=1.2) respectively. We begin with the illumination source optimization using full vector high-NA calculation (VHNA) with production resist stack and all manufacturability requirements for the source shaping diffractive optical element (DOE) are accounted for during the source optimization. Using the optimized source, IML TM technology based scattering bars (SB) placement together with model based OPC (MOPC) are applied to the original contact-hole design. In-focus printing and process latitude simulations are used to gauge the performance and manufacturability of the final optimized process, which includes the optimized mask, optimized source and required imaging settings. Our results show that for the 130nm pitch Flash contact-hole patterns, on ASML XT 1400i at NA=0.93, both optimized illumination source and immersion lithography are necessary in order to achieve manufacturability. The worst-case depth of focus (DOF) before SB and MOPC is 100-130nm at 6% EL, without common process window (PW) and with MOPC, the worst-case DOF is >200nm at 6% EL. The latter is in excellent agreement with the wafer results from ASML XT 1400i, and the predicated CDs match well with the measured at isolated, medium and dense pitch contact-holes to within 5nm. For the 120nm pitch Flash contact patterns, ASML XT 1700i at NA=1.2 must be used, together with optimized illumination source, to achieve the same or better process latitude (worst-case DOF at 6% EL), and for the Flash pattern used, further

Challenges and solutions ensuring EUVL photomask integrity

Science.gov (United States)

Brux, O.; Dreß, P.; Schmalfuß, H.; Jonckheere, R.; Koolen-Hermkens, W.

2012-06-01

Industry roadmaps indicate that the introduction of Extreme Ultraviolet Lithography (EUVL) is on track for high volume manufacturing. Although, there has been significant progress in each of the individual subsets of the EUVL infrastructure, the absolute management of the process outside of the scanner and up to the point-of-exposure has been highlighted as critical requirement for the adoption of EUVL. Significant changes in the EUV system environment and mask architecture are driving a zero process tolerance level. Any unforeseen contamination introduced to the scanner environment from the EUV mask could cause considerable downtime and yield loss. Absolute mask integrity at the point-of-exposure must be guaranteed. EUV mask cleaning processes-of-record have been developed and introduced to the industry [1]. The issue is not longer "how to clean the mask" but, "how to keep it clean". With the introduction of EUVL, mask cleanliness extends out beyond the traditional mask cleaning tool. Complete control of contamination and/or particles during transportation, handling and storage will require a holistic approach to mask management. A new environment specifically for EUV mask integrity must be developed and fully tested for the sub 16nm half-pitch node introduction. The SUSS MaskTrack Pro (MTP) InSync was introduced as the solution for EUV mask integrity. SUSS demonstrated the fully automated handling of EUV masks into and out of a Dual Pod System [2]. Intrinsic cleanliness of each individual handling and storage step of the inner pod (EIP) and EUV mask inside the MTP InSync Tool was investigated and reported. A target specification of a PRP cleaning by measuring particles down to 150nm size. A dynamic capture rate of larger 97% at 200nm particle size based on PSLs was achieved; for EIP cleaning, a dry-cleaning technology is under investigation. During feasibility studies high particle removal efficiency (PRE) results larger 99% has been achieved for particles down

Absorption and Emission of EUV Radiation by the Local ISM

Science.gov (United States)

Paresce, F.

1984-01-01

The Berkeley extreme ultraviolet radiation (EUV) telescope flown on the Apollo Soyuz mission in July, 1975 established the existence of a measurable flux of EUV (100 lambda or = or = 1000 A) originating from sources outside the solar system. White dwarfs, flare stars and cataclysmic variables were dicovered to be relatively intense compact sources of EUV photons. Moreover, this and other subsequent experiments have strongly suggested the presence of a truly diffuse component of the FUV radiation field possibly due to thermal emission from hot interstellar gas located in the general vicinity of the Sun. Closer to the H1, 912 A edge, the effect of a few hot O and B stars has been shown to be very important in establishing the interstellar flux density. All these results imply that the local interstellar medium (ISM) is immersed in a non-negligible EUV radiation field which, because of the strong coupling between EUV photons and matter, will play a crucial role in determining its physical structure. The available information on the local ISM derived from the limited EUV observations carried out so far is assembled and analyzed. These include measurements of the spectra of bright EUV sources that reveal clear evidence of H photo absorption at lambda 400 A and of the He ionization edge at 228 A.

Modular EUV Source for the next generation lithography

International Nuclear Information System (INIS)

Sublemontier, O.; Rosset-Kos, M.; Ceccotti, T.; Hergott, J.F.; Auguste, Th.; Normand, D.; Schmidt, M.; Beaumont, F.; Farcage, D.; Cheymol, G.; Le Caro, J.M.; Cormont, Ph.; Mauchien, P.; Thro, P.Y.; Skrzypczak, J.; Muller, S.; Marquis, E.; Barthod, B.; Gaurand, I.; Davenet, M.; Bernard, R.

2011-01-01

The present work, performed in the frame of the EXULITE project, was dedicated to the design and characterization of a laser-plasma-produced extreme ultraviolet (EUV) source prototype at 13.5 nm for the next generation lithography. It was conducted in cooperation with two laboratories from CEA, ALCATEL and THALES. One of our approach originalities was the laser scheme modularity. Six Nd:YAG laser beams were focused at the same time on a xenon filament jet to generate the EUV emitting plasma. Multiplexing has important industrial advantages and led to interesting source performances in terms of in-band power, stability and angular emission properties with the filament jet target. A maximum conversion efficiency (CE) value of 0.44% in 2π sr and 2% bandwidth was measured, which corresponds to a maximum in band EUV mean power of 7.7 W at a repetition rate of 6 kHz. The EUV emission was found to be stable and isotropic in these conditions. (authors)

Characterization of laser-produced plasma EUV light

International Nuclear Information System (INIS)

Mizoguchi, Hakaru; Endo, Akira; Takabayashi, Yuichi; Sasaki, Akira; Komori, Hiroshi; Suganuma, Takashi

2005-01-01

Resolution of optical microlithography process becomes smaller and smaller. Wavelength of the light source for these optical lithography reduced from KrF, ArF to F2 to meet the resolution requirement. Recently EUV is spotlighted as promising candidate for next generation lithography light source. This paper summarizes the requirement and studies of experiments and simulation to improve the convention efficiency of EUV light source. (author)

Design criteria for small coded aperture masks in gamma-ray astronomy

International Nuclear Information System (INIS)

Sembay, S.; Gehrels, N.

1990-01-01

Most theoretical work on coded aperture masks in X-ray and low-energy γ-ray astronomy has concentrated on masks with large numbers of elements. For γ-ray spectrometers in the MeV range, the detector plane usually has only a few discrete elements, so that masks with small numbers of elements are called for. For this case it is feasible to analyse by computer all the possible mask patterns of given dimension to find the ones that best satisfy the desired performance criteria. In this paper we develop a particular set of performance criteria for comparing the flux sensitivities, source positioning accuracies and transparencies of different mask patterns. We then present the results of such a computer analysis for masks up to dimension 5x5 unit cell and conclude that there is a great deal of flexibility in one's choice of mask pattern for each dimension. (orig.)

Multi-part mask for implanting workpieces

Science.gov (United States)

Webb, Aaron P.; Carlson, Charles T.

2016-05-10

A multi-part mask has a pattern plate, which includes a planar portion that has the desired aperture pattern to be used during workpiece processing. The multi-part mask also has a mounting frame, which is used to hold the pattern plate. Prior to assembly, the pattern plate has an aligning portion, which has one or more holes through which reusable alignment pins are inserted. These alignment pins enter kinematic joints disposed on the mounting frame, which serve to precisely align the pattern plate to the mounting frame. After the pattern plate has been secured to the mounting frame, the aligning portion can be detached from the pattern plate. The alignment pins can be reused at a later time. In some embodiments, the pattern plate can later be removed from the mounting frame, so that the mounting frame may be reused.

At-wavelength interferometry of high-NA diffraction-limited EUV optics

International Nuclear Information System (INIS)

Goldberg, Kenneth A.; Naulleau, Patrick; Rekawa, Senajith; Denham, Paul; Liddle, J. Alexander; Anderson, Erik; Jackson, Keith; Bokor, Jeffrey; Attwood, David

2003-01-01

Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub(angstrom)-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed

APPLICATION OF EQUIPMENT FOR AUTOMATIC CONTROL OF PLANAR STRUCTURES IN MANUFACTURING MASTER MASKS OF INTEGRATED CIRCUITS ON PHOTO-MASKS

Directory of Open Access Journals (Sweden)

S. M. Avakov

2007-01-01

Full Text Available Following the concept of defect-free manufacturing of master masks of IC on photo-masks, two Belarusian sets of optomechanical equipment for 0,3 5 p and 90 nanometers are presented in the paper. Each of the sets comprises:   • Multi-channel laser pattern generator; • Automatic mask defect inspection system; • Laser-based mask defect repair system.The paper contains description of automatic mask defect inspection process during photo-mask manufacturing and respective basic technological operations of the processes.Advantages of a complex approach to the development of a set of opto-mechanical equipment for defect-free manufacturing of photo-masks have been analyzed in the paper. 

Compact laser-produced plasma EUV sources for processing polymers and nanoimaging

International Nuclear Information System (INIS)

Fiedorowicz, H.; Bartnik, A.; Jarocki, R.; Kostecki, J.; Szczurek, M.; Wachulak, P.

2010-01-01

Complete text of publication follows. Extreme ultraviolet (EUV) can be produced form a high-temperature plasma generated by interaction of high power laser pulses with matter. Laser plasma EUV sources are considered to be used in various applications in physics, material science, biomedicine, and technology. In the paper new compact laser plasma EUV sources developed for processing polymers and imaging are presented. The sources are based on a gas puff target formed by pulsed injection of a small amount of gas under high-pressure into a laser focus region. The use of the gas puff target instead of a solid target allows for efficient generation of EUV radiation without debris production. The compact laser plasma EUV source based on a gas puff target was developed for metrology applications. The EUV source developed for processing polymers is equipped with a grazing incidence axisymmetrical ellipsoidal mirror to focus EUV radiation in the relatively broad spectral range with the strong maximum near 10 nm. The size of the focal spot is about 1.3 mm in diameter with the maximum fluence up to 70 mJ/cm 2 . EUV radiation in the wavelength range of about 5 to 50 nm is produced by irradiation of xenon or krypton gas puff target with a Nd:YAG laser operating at 10 Hz and delivering 4 ns pulses of energy up to 0.8 J per pulse. The experiments on EUV irradiation of various polymers have been performed. Modification of polymer surfaces was achieved, primarily due to direct photo-etching with EUV photons and formation of micro- and nanostructures onto the surface. The mechanism of the interaction is similar to the UV laser ablation where energetic photons cause chemical bonds of the polymer chain to be broken. However, because of very low penetration depth of EUV radiation, the interaction region is limited to a very thin surface layer (<100 nm). This makes it possible to avoid degradation of bulk material caused by deeply penetrating UV radiation. The results of the studies

Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

Science.gov (United States)

Ye, Dong; Wu, Shu-Qun; Yu, Yao; Liu, Lin; Lu, Xin-Pei; Wu, Yue

2014-03-01

In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10 μm. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

International Nuclear Information System (INIS)

Ye, Dong; Yu, Yao; Liu, Lin; Wu, Shu-Qun; Lu, Xin-Pei; Wu, Yue

2014-01-01

In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10 μm. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics

Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

Energy Technology Data Exchange (ETDEWEB)

Ye, Dong; Yu, Yao, E-mail: ensiyu@mail.hust.edu.cn; Liu, Lin [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Shu-Qun; Lu, Xin-Pei [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Yue [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)

2014-03-10

In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10 μm. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

Fast mask writers: technology options and considerations

Science.gov (United States)

Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

2011-04-01

The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

At-wavelength interferometry of high-NA diffraction-limited EUV optics

Energy Technology Data Exchange (ETDEWEB)

Goldberg, Kenneth A.; Naulleau, Patrick; Rekawa, Senajith; Denham, Paul; Liddle, J. Alexander; Anderson, Erik; Jackson, Keith; Bokor, Jeffrey; Attwood, David

2003-08-01

Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub{angstrom}-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed.

Development of a EUV Test Facility at the Marshall Space Flight Center

Science.gov (United States)

West, Edward; Pavelitz, Steve; Kobayashi, Ken; Robinson, Brian; Cirtain, Johnathan; Gaskin, Jessica; Winebarger, Amy

2011-01-01

This paper will describe a new EUV test facility that is being developed at the Marshall Space Flight Center (MSFC) to test EUV telescopes. Two flight programs, HiC - high resolution coronal imager (sounding rocket) and SUVI - Solar Ultraviolet Imager (GOES-R), set the requirements for this new facility. This paper will discuss those requirements, the EUV source characteristics, the wavelength resolution that is expected and the vacuum chambers (Stray Light Facility, Xray Calibration Facility and the EUV test chamber) where this facility will be used.

Surface Inhomogeneities of the White Dwarf in the Binary EUVE J2013+400

Science.gov (United States)

Vennes, Stephane

We propose to study the white dwarf in the binary EUVE J2013+400. The object is paired with a dMe star and new extreme ultraviolet (EUV) observations will offer critical insights into the properties of the white dwarf. The binary behaves, in every other aspects, like its siblings EUVE J0720-317 and EUVE J1016-053 and new EUV observations will help establish their class properties; in particular, EUV photometric variations in 0720-317 and 1016-053 over a period of 11 hours and 57 minutes, respectively, are indicative of surface abundance inhomogeneities coupled with the white dwarfs rotation period. These variations and their large photospheric helium abundance are best explained by a diffusion-accretion model in which time-variable accretion and possible coupling to magnetic poles contribute to abundance variations across the surface and possibly as a function of depth. EUV spectroscopy will also enable a study of the helium abundance as a function of depth and a detailed comparison with theoretical diffusion profile.

Interactions between concentric form-from-structure and face perception revealed by visual masking but not adaptation

Science.gov (United States)

Feczko, Eric; Shulman, Gordon L.; Petersen, Steven E.; Pruett, John R.

2014-01-01

Findings from diverse subfields of vision research suggest a potential link between high-level aspects of face perception and concentric form-from-structure perception. To explore this relationship, typical adults performed two adaptation experiments and two masking experiments to test whether concentric, but not nonconcentric, Glass patterns (a type of form-from-structure stimulus) utilize a processing mechanism shared by face perception. For the adaptation experiments, subjects were presented with an adaptor for 5 or 20 s, prior to discriminating a target. In the masking experiments, subjects saw a mask, then a target, and then a second mask. Measures of discriminability and bias were derived and repeated measures analysis of variance tested for pattern-specific masking and adaptation effects. Results from Experiment 1 show no Glass pattern-specific effect of adaptation to faces; results from Experiment 2 show concentric Glass pattern masking, but not adaptation, may impair upright/inverted face discrimination; results from Experiment 3 show concentric and radial Glass pattern masking impaired subsequent upright/inverted face discrimination more than translational Glass pattern masking; and results from Experiment 4 show concentric and radial Glass pattern masking impaired subsequent face gender discrimination more than translational Glass pattern masking. Taken together, these findings demonstrate interactions between concentric form-from-structure and face processing, suggesting a possible common processing pathway. PMID:24563526

Cell patterning on a glass surface by a mask-assisted ion implantation

Energy Technology Data Exchange (ETDEWEB)

Jung, Chan-Hee; Kim, Dong-Ki; Hwang, In-Tae; Lim, Youn-Mook; Kim, Hae-Kyoung; Nho, Young-Chang [Radiation Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup-si, Jeollabuk-do 580-185 (Korea, Republic of); Choi, Jae-Hak [Radiation Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup-si, Jeollabuk-do 580-185 (Korea, Republic of)], E-mail: jaehakchoi@kaeri.re.kr

2009-04-15

A simple patterning method of cells on a glass has been developed by using ion implantation. The glass was implanted through a pattern mask with 150 keV Ar ions in the absence or presence of oxygen. Surface properties of the ion-implanted glass were investigated by means of X-ray photoelectron spectroscopy, contact angle measurement and cell culture test. The results showed that more hydrophilic groups were formed on the glass surface implanted in the presence of oxygen. Thus, the glass surface implanted in the presence of oxygen showed lower contact angle compared with the glass surface implanted in the absence of oxygen. The cells were strongly adhered to and proliferated on the ion-implanted regions of the glass. The cell population was found to be the highest on the glass implanted at a fluence of 1 x 10{sup 16} ions/cm{sup 2} in the presence of oxygen.

Expanding the printable design space for lithography processes utilizing a cut mask

Science.gov (United States)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

Simulation-based MDP verification for leading-edge masks

Science.gov (United States)

Su, Bo; Syrel, Oleg; Pomerantsev, Michael; Hagiwara, Kazuyuki; Pearman, Ryan; Pang, Leo; Fujimara, Aki

2017-07-01

For IC design starts below the 20nm technology node, the assist features on photomasks shrink well below 60nm and the printed patterns of those features on masks written by VSB eBeam writers start to show a large deviation from the mask designs. Traditional geometry-based fracturing starts to show large errors for those small features. As a result, other mask data preparation (MDP) methods have become available and adopted, such as rule-based Mask Process Correction (MPC), model-based MPC and eventually model-based MDP. The new MDP methods may place shot edges slightly differently from target to compensate for mask process effects, so that the final patterns on a mask are much closer to the design (which can be viewed as the ideal mask), especially for those assist features. Such an alteration generally produces better masks that are closer to the intended mask design. Traditional XOR-based MDP verification cannot detect problems caused by eBeam effects. Much like model-based OPC verification which became a necessity for OPC a decade ago, we see the same trend in MDP today. Simulation-based MDP verification solution requires a GPU-accelerated computational geometry engine with simulation capabilities. To have a meaningful simulation-based mask check, a good mask process model is needed. The TrueModel® system is a field tested physical mask model developed by D2S. The GPU-accelerated D2S Computational Design Platform (CDP) is used to run simulation-based mask check, as well as model-based MDP. In addition to simulation-based checks such as mask EPE or dose margin, geometry-based rules are also available to detect quality issues such as slivers or CD splits. Dose margin related hotspots can also be detected by setting a correct detection threshold. In this paper, we will demonstrate GPU-acceleration for geometry processing, and give examples of mask check results and performance data. GPU-acceleration is necessary to make simulation-based mask MDP verification

New method of 2-dimensional metrology using mask contouring

Science.gov (United States)

Matsuoka, Ryoichi; Yamagata, Yoshikazu; Sugiyama, Akiyuki; Toyoda, Yasutaka

2008-10-01

We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, this edge detection method is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. This method realizes two-dimensional metrology for refined pattern that had been difficult to measure conventionally by utilizing high precision contour profile. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. This is to say, demands for quality is becoming strenuous because of enormous quantity of data growth with increasing of refined pattern on photo mask manufacture. In the result, massive amount of simulated error occurs on mask inspection that causes lengthening of mask production and inspection period, cost increasing, and long delivery time. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method of a DFM solution using two-dimensional metrology for refined pattern.

EUV and Magnetic Activities Associated with Type-I Solar Radio Bursts

Science.gov (United States)

Li, C. Y.; Chen, Y.; Wang, B.; Ruan, G. P.; Feng, S. W.; Du, G. H.; Kong, X. L.

2017-06-01

Type-I bursts ( i.e. noise storms) are the earliest-known type of solar radio emission at the meter wavelength. They are believed to be excited by non-thermal energetic electrons accelerated in the corona. The underlying dynamic process and exact emission mechanism still remain unresolved. Here, with a combined analysis of extreme ultraviolet (EUV), radio and photospheric magnetic field data of unprecedented quality recorded during a type-I storm on 30 July 2011, we identify a good correlation between the radio bursts and the co-spatial EUV and magnetic activities. The EUV activities manifest themselves as three major brightening stripes above a region adjacent to a compact sunspot, while the magnetic field there presents multiple moving magnetic features (MMFs) with persistent coalescence or cancelation and a morphologically similar three-part distribution. We find that the type-I intensities are correlated with those of the EUV emissions at various wavelengths with a correlation coefficient of 0.7 - 0.8. In addition, in the region between the brightening EUV stripes and the radio sources there appear consistent dynamic motions with a series of bi-directional flows, suggesting ongoing small-scale reconnection there. Mainly based on the induced connection between the magnetic motion at the photosphere and the EUV and radio activities in the corona, we suggest that the observed type-I noise storms and the EUV brightening activities are the consequence of small-scale magnetic reconnection driven by MMFs. This is in support of the original proposal made by Bentley et al. ( Solar Phys. 193, 227, 2000).

Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL

Science.gov (United States)

Jang, Il-Yong; Huh, Sung-Min; Moon, Seong-Yong; Woo, Sang-Gyun; Lee, Jin-Kwan; Moon, Sang Heup; Cho, HanKu

2008-10-01

A patterned TaN substrate, which is candidate for a mask absorber in extreme ultra-violet lithography (EUVL), was etched to have inclined sidewalls by using a Faraday cage system under the condition of a 2-step process that allowed the high etch selectivity of TaN over the resist. The sidewall angle (SWA) of the patterned substrate, which was in the shape of a parallelogram after etching, could be controlled by changing the slope of a substrate holder that was placed in the Faraday cage. The performance of an EUV mask, which contained the TaN absorber of an oblique pattern over the molybdenum/silicon multi-layer, was simulated for different cases of SWA. The results indicated that the optical properties, such as the critical dimension (CD), an offset in the CD bias between horizontal and vertical patterns (H-V bias), and a shift in the image position on the wafer, could be controlled by changing the SWA of the absorber stack. The simulation result showed that the effect of the SWA on the optical properties became more significant at larger thicknesses of the absorber and smaller sizes of the target CD. Nevertheless, the contrast of the aerial images was not significantly decreased because the shadow effect caused by either sidewall of the patterned substrate cancelled with each other.

Method for making a single-step etch mask for 3D monolithic nanostructures

International Nuclear Information System (INIS)

Grishina, D A; Harteveld, C A M; Vos, W L; Woldering, L A

2015-01-01

Current nanostructure fabrication by etching is usually limited to planar structures as they are defined by a planar mask. The realization of three-dimensional (3D) nanostructures by etching requires technologies beyond planar masks. We present a method for fabricating a 3D mask that allows one to etch three-dimensional monolithic nanostructures using only CMOS-compatible processes. The mask is written in a hard-mask layer that is deposited on two adjacent inclined surfaces of a Si wafer. By projecting in a single step two different 2D patterns within one 3D mask on the two inclined surfaces, the mutual alignment between the patterns is ensured. Thereby after the mask pattern is defined, the etching of deep pores in two oblique directions yields a three-dimensional structure in Si. As a proof of concept we demonstrate 3D mask fabrication for three-dimensional diamond-like photonic band gap crystals in silicon. The fabricated crystals reveal a broad stop gap in optical reflectivity measurements. We propose how 3D nanostructures with five different Bravais lattices can be realized, namely cubic, tetragonal, orthorhombic, monoclinic and hexagonal, and demonstrate a mask for a 3D hexagonal crystal. We also demonstrate the mask for a diamond-structure crystal with a 3D array of cavities. In general, the 2D patterns on the different surfaces can be completely independently structured and still be in perfect mutual alignment. Indeed, we observe an alignment accuracy of better than 3.0 nm between the 2D mask patterns on the inclined surfaces, which permits one to etch well-defined monolithic 3D nanostructures. (paper)

Bubble masks for time-encoded imaging of fast neutrons.

Energy Technology Data Exchange (ETDEWEB)

Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John T.; Sweany, Melinda; Throckmorton, Daniel J.

2013-09-01

Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is inducedtypically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gapsbubblespropagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

Performance of 100-W HVM LPP-EUV source

Science.gov (United States)

Mizoguchi, Hakaru; Nakarai, Hiroaki; Abe, Tamotsu; Nowak, Krzysztof M.; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Hori, Tsukasa; Kodama, Takeshi; Shiraishi, Yutaka; Yanagida, Tatsuya; Soumagne, Georg; Yamada, Tsuyoshi; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi

2015-08-01

At Gigaphoton Inc., we have developed unique and original technologies for a carbon dioxide laser-produced tin plasma extreme ultraviolet (CO2-Sn-LPP EUV) light source, which is the most promising solution for high-power high-volume manufacturing (HVM) EUV lithography at 13.5 nm. Our unique technologies include the combination of a pulsed CO2 laser with Sn droplets, the application of dual-wavelength laser pulses for Sn droplet conditioning, and subsequent EUV generation and magnetic field mitigation. Theoretical and experimental data have clearly shown the advantage of our proposed strategy. Currently, we are developing the first HVM light source, `GL200E'. This HVM light source will provide 250-W EUV power based on a 20-kW level pulsed CO2 laser. The preparation of a high average-power CO2 laser (more than 20 kW output power) has been completed in cooperation with Mitsubishi Electric Corporation. Recently, we achieved 140 W at 50 kHz and 50% duty cycle operation as well as 2 h of operation at 100 W of power level. Further improvements are ongoing. We will report the latest status and the challenge to reach stable system operation of more than 100 W at about 4% conversion efficiency with 20-μm droplets and magnetic mitigation.

Simulation based mask defect repair verification and disposition

Science.gov (United States)

Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

2009-10-01

As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple

Negative-tone imaging with EUV exposure for 14nm hp and beyond

Science.gov (United States)

Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Fujimori, Toru; Momota, Makoto; Goto, Takahiro

2015-03-01

Manipulation of dissolution properties by changing organic solvent developer and rinse material provides a novel technology to obtain fine pattern beyond the limitation of imaging system based on alkaline developer. QCM study showed no swelling character in negative-tone imaging (NTI) process even for current developer of n-butyl acetate (nBA). Actually, NTI process has shown advantages on resolution and line-width roughness (LWR) in loose pitch around 30 ~ 45 nm hp as a consequence of its non-swelling character. On the other hand, bridge and collapse limited its resolution below 20 nm hp, indicating that non-negligible amount of swelling still exists for tight pitch resolution. We investigated effects of solubility parameter of organic solvents on resolution below 20 nm hp. A bridge was reduced with a decrease in the solubility parameter dp from nBA. On the other hand, much lower dp caused film remaining due to its extremely slow Rmax. Based on these results, we newly developed FN-DP301 containing organic solvent with smaller dp than nBA. Although rinse solvent gave negligible effects on bridge, there is a clear improvement on pattern collapse only in case of using new rinse solvent of FN-RP311. Lithographic performances of NTI process using nBA and FN-DP301 together with the other organic solvents were described in this paper under exposures with an E-beam and a EUV light. It is emphasized that 14 nm hp resolution was obtained only using FN-DP301 as a developer and FN-RP311 as a rinse under E-beam exposure. NTI showed 43% faster photospeed in comparison with PTI at 16 nm hp, indicating that NTI is applicable to obtain high throughput with maintaining resolution. In addition, sub-20 nm trench was obtained using NTI without bridge under EUV exposure, all of which are attributed to the low swelling character of NTI process. Similarly, NTI was able to print 20 nm dots using NXE:3100 with only a little peeling. Conversely CH patterning was significantly worse with NTI

Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

International Nuclear Information System (INIS)

Liu Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Tittonen, Ilkka; Grigoras, Kestutis

2013-01-01

A novel aluminum oxide (Al 2 O 3 ) hard mask fabrication process with nanoscale resolution is introduced. The Al 2 O 3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al 2 O 3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga + ) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al 2 O 3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga + FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al 2 O 3 mask protects the underlying silicon from Ga + ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated. (paper)

Mask fabrication process

Science.gov (United States)

Cardinale, Gregory F.

2000-01-01

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Advanced 0.3-NA EUV lithography capabilities at the ALS

International Nuclear Information System (INIS)

Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A.; Hoef, Brian; Jackson, Keith

2005-01-01

For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines

Progress in coherent lithography using table-top extreme ultraviolet lasers

Science.gov (United States)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution

Mix-and-match considerations for EUV insertion in N7 HVM

Science.gov (United States)

Chen, Xuemei; Gabor, Allen; Samudrala, Pavan; Meyers, Sheldon; Hosler, Erik; Johnson, Richard; Felix, Nelson

2017-03-01

An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.

Rapid iconic erasure without masking.

Science.gov (United States)

Tijus, Charles Albert; Reeves, Adam

2004-01-01

We report on the erasure of the iconic memory of an array of 12 black letters flashed on a continuously- present white field. Erasure is accomplished by replacing the 16 ms letter array (frame 1) with a blank white frame for 16 ms (frame 2). The letter array returns in frame 3, with from one to six letters missing. Report of the missing letters is accurate without the blank white frame but is impoverished with it, as if interposing the blank erases the icon. Erasure occurs without any obvious luminance masking, 'mud splashes', pattern masking (backward, forward, or metacontrast), lateral masking, or masking by object substitution. Erasure is greatly decreased if the blank is presented one frame earlier or later. We speculate that erasure is due to a rapid reset of the icon produced by an informational mis-match.

Study of shape evaluation for mask and silicon using large field of view

Science.gov (United States)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2010-09-01

We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of

Integration of mask and silicon metrology in DFM

Science.gov (United States)

Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

2009-03-01

We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

Plasma-based EUV light source

Science.gov (United States)

Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

2010-11-02

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Extension of optical lithography by mask-litho integration with computational lithography

Science.gov (United States)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Ferromagnetic shadow mask for spray coating of polymer patterns

DEFF Research Database (Denmark)

Keller, Stephan Sylvest; Bosco, Filippo; Boisen, Anja

2013-01-01

We present the fabrication of a wafer-scale shadow mask with arrays of circular holes with diameters of 150–400 μm. Standard UV photolithography is used to define 700 μm thick SU-8 structures followed by electroplating of nickel and etching of the template. The ferromagnetic properties of the sha......We present the fabrication of a wafer-scale shadow mask with arrays of circular holes with diameters of 150–400 μm. Standard UV photolithography is used to define 700 μm thick SU-8 structures followed by electroplating of nickel and etching of the template. The ferromagnetic properties...

Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons

Science.gov (United States)

Pollentier, I.; Tirumala Venkata, A.; Gronheid, R.

2014-04-01

EUV photoresists are considered as a potential source of optics contamination, since they introduce irradiation-induced outgassing in the EUV vacuum environment. Therefore, before these resists can be used on e.g. ASML NXE:3100 or NXE:3300, they need to be tested in dedicated equipment according to a well-defined procedure, which is based on exposing a witness sample (WS) in the vicinity of a simultaneously exposed resist as it outgasses. Different system infrastructures are used at multiple sites (e.g. NIST, CNSE, Sematech, EIDEC, and imec) and were calibrated to each other by a detailed test plan. Despite this detailed tool qualifications, a first round robin comparison of identical materials showed inconsistent outgas test results, and required further investigation by a second round robin. Since the resist exposure mode is different at the various locations (some sites are using EUV photons while others use E-gun electrons), this difference has always a point of concern for variability of test results. In this work we compare the outgas test results from EUV photon and electron exposure using the resist materials of the second round robin. Since the imec outgas tester allows both exposure methods on the resist, a within-system comparison is possible and showed limited variation between photon and electron exposure mode. Therefore the system-to-system variability amongst the different outgas test sites is expected to be related to other parameters than the electron/photon exposure mode. Initial work showed that the variability might be related to temperature, E-gun emission excursion, and/or residual outgassing scaled by different wafer areas at the different sites.

X ray reflection masks: Manufacturing, characterization and first tests

Science.gov (United States)

Rahn, Stephen

1992-09-01

SXPL (Soft X-ray Projection Lithography) multilayer mirrors are characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors with a 2d in the region of 14 nm were characterized by Cu-k(alpha) grazing incidence as well as soft X-ray normal incidence reflectivity measurements. The multilayer mirrors were patterned by reactive ion etching with CF4 using a photoresist as etch mask, thus producing X-ray reflection masks. The masks were tested at the synchrotron radiation laboratory of the electron accelerator ELSA. A double crystal X-ray monochromator was modified so as to allow about 0.5 sq cm of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto a resist and structure sizes down to 8 micrometers were nicely reproduced. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

The EUVE Mission at UCB: Squeezing More From Less

Science.gov (United States)

Stroozas, B. A.; Cullison, J. L.; McDonald, K. E.; Nevitt, R.; Malina, R. F.

2000-05-01

With 8 years on orbit, and over three years in an outsourced mode at U.C. Berkeley (UCB), NASA's Extreme Ultraviolet Explorer (EUVE) continues to be a highly mature and productive scientific mission. The EUVE satellite is extremely stable and exhibits little degradation in its original scientific capabilities, and science data return continues to be at the >99% level. The Project's very small, dedicated, innovative, and relatively cheap ( \\$1 million/year) support team at UCB continues to validate the success of NASA's outsourcing "experiment" while providing a very high science-per-dollar return on NASA's investment with no significant additional risk to the flight systems. The EUVE mission still has much more to offer in terms of important and exciting scientific discoveries as well as mission operations innovations. To highlight this belief the EUVE team at UCB continues to find creative ways to do more with less -- to squeeze the maximum out of available funds -- in NASA's "cheaper, better, faster" environment. This paper provides an overview of the EUVE mission's past, current, and potential future efforts toward automating and integrating its multi-functional data processing systems in proposal management, observation planning, mission operations and engineering, and the processing, archival, and delivery of raw telemetry and science data products. The paper will also discuss the creative allocation of the Project's few remaining personnel resources who support both core mission functions and new innovations, while at the same time minimizing overall risk and stretching the available budget. This work is funded through NASA/UCB Cooperative Agreement NCC5-138.

A survey of practice patterns in the use of laryngeal mask by pediatric anesthesiologists.

Science.gov (United States)

Patel, Anuradha; Clark, Scott R; Schiffmiller, Moshe; Schoenberg, Catherine; Tewfik, George

2015-11-01

Laryngeal mask is frequently the airway device of choice in routine general anesthesia for many procedures in children. Several studies have described the use of laryngeal masks in unconventional situations. This survey was undertaken to assess how laryngeal masks are being used by pediatric anesthesiologists. The 40-question electronic survey using SurveyMonkey™ was sent to 2740 members of the Society for Pediatric Anesthesia (SPA). This survey assessed the age, work environment, types of practice, and training levels, as well as clinical situations in which the practitioners use laryngeal masks across different pediatric age groups. Seven hundred and forty-three (27.1%) responses were obtained. The use of laryngeal mask increased as the patient age increased in nearly every queried situation. The practitioners routinely utilize laryngeal masks in a variety of challenging scenarios, such as in patients with a recent upper respiratory infection, in the difficult airway, remote locations, and long-duration surgeries. A small percentage of pediatric anesthesiologists use laryngeal masks in laparoscopic surgery and prone position procedures. Pediatric anesthesiologists are using laryngeal masks in both routine and challenging/unconventional situations. Although many of the uses for laryngeal masks are not explicitly stated in the manufacturer guidelines, literature and current practice support the use of laryngeal masks in several of these scenarios. © 2015 John Wiley & Sons Ltd.

Automatic circuit analysis based on mask information

International Nuclear Information System (INIS)

Preas, B.T.; Lindsay, B.W.; Gwyn, C.W.

1976-01-01

The Circuit Mask Translator (CMAT) code has been developed which converts integrated circuit mask information into a circuit schematic. Logical operations, pattern recognition, and special functions are used to identify and interconnect diodes, transistors, capacitors, and resistances. The circuit topology provided by the translator is compatible with the input required for a circuit analysis program

Nanoimaging using soft X-ray and EUV laser-plasma sources

Science.gov (United States)

Wachulak, Przemyslaw; Torrisi, Alfio; Ayele, Mesfin; Bartnik, Andrzej; Czwartos, Joanna; Węgrzyński, Łukasz; Fok, Tomasz; Fiedorowicz, Henryk

2018-01-01

In this work we present three experimental, compact desk-top imaging systems: SXR and EUV full field microscopes and the SXR contact microscope. The systems are based on laser-plasma EUV and SXR sources based on a double stream gas puff target. The EUV and SXR full field microscopes, operating at 13.8 nm and 2.88 nm wavelengths are capable of imaging nanostructures with a sub-50 nm spatial resolution and short (seconds) exposure times. The SXR contact microscope operates in the "water-window" spectral range and produces an imprint of the internal structure of the imaged sample in a thin layer of SXR sensitive photoresist. Applications of such desk-top EUV and SXR microscopes, mostly for biological samples (CT26 fibroblast cells and Keratinocytes) are also presented. Details about the sources, the microscopes as well as the imaging results for various objects will be presented and discussed. The development of such compact imaging systems may be important to the new research related to biological, material science and nanotechnology applications.

Atomic hydrogen cleaning of EUV multilayer optics

Science.gov (United States)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Å/hr for sputtered carbon and 40 Å/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning

Mitigating mask roughness via pupil filtering

Science.gov (United States)

Baylav, B.; Maloney, C.; Levinson, Z.; Bekaert, J.; Vaglio Pret, A.; Smith, B.

2014-03-01

The roughness present on the sidewalls of lithographically defined patterns imposes a very important challenge for advanced technology nodes. It can originate from the aerial image or the photoresist chemistry/processing [1]. The latter remains to be the dominant group in ArF and KrF lithography; however, the roughness originating from the mask transferred to the aerial image is gaining more attention [2-9], especially for the imaging conditions with large mask error enhancement factor (MEEF) values. The mask roughness contribution is usually in the low frequency range, which is particularly detrimental to the device performance by causing variations in electrical device parameters on the same chip [10-12]. This paper explains characteristic differences between pupil plane filtering in amplitude and in phase for the purpose of mitigating mask roughness transfer under interference-like lithography imaging conditions, where onedirectional periodic features are to be printed by partially coherent sources. A white noise edge roughness was used to perturbate the mask features for validating the mitigation.

FIRST SIMULTANEOUS OBSERVATION OF AN H{alpha} MORETON WAVE, EUV WAVE, AND FILAMENT/PROMINENCE OSCILLATIONS

Energy Technology Data Exchange (ETDEWEB)

Asai, Ayumi; Isobe, Hiroaki [Unit of Synergetic Studies for Space, Kyoto University, Yamashina, Kyoto 607-8471 (Japan); Ishii, Takako T.; Kitai, Reizaburo; Ichimoto, Kiyoshi; UeNo, Satoru; Nagata, Shin' ichi; Morita, Satoshi; Nishida, Keisuke; Shibata, Kazunari [Kwasan and Hida Observatories, Kyoto University, Yamashina, Kyoto 607-8471 (Japan); Shiota, Daikou [Advanced Science Institute, RIKEN, Wako, Saitama 351-0198 (Japan); Oi, Akihito [College of Science, Ibaraki University, Mito, Ibaraki 310-8512 (Japan); Akioka, Maki, E-mail: asai@kwasan.kyoto-u.ac.jp [Hiraiso Solar Observatory, National Institute of Information and Communications Technology, Hitachinaka, Ibaraki 311-1202 (Japan)

2012-02-15

We report on the first simultaneous observation of an H{alpha} Moreton wave, the corresponding EUV fast coronal waves, and a slow and bright EUV wave (typical EIT wave). We observed a Moreton wave, associated with an X6.9 flare that occurred on 2011 August 9 at the active region NOAA 11263, in the H{alpha} images taken by the Solar Magnetic Activity Research Telescope at Hida Observatory of Kyoto University. In the EUV images obtained by the Atmospheric Imaging Assembly on board the Solar Dynamic Observatory we found not only the corresponding EUV fast 'bright' coronal wave, but also the EUV fast 'faint' wave that is not associated with the H{alpha} Moreton wave. We also found a slow EUV wave, which corresponds to a typical EIT wave. Furthermore, we observed, for the first time, the oscillations of a prominence and a filament, simultaneously, both in the H{alpha} and EUV images. To trigger the oscillations by the flare-associated coronal disturbance, we expect a coronal wave as fast as the fast-mode MHD wave with the velocity of about 570-800 km s{sup -1}. These velocities are consistent with those of the observed Moreton wave and the EUV fast coronal wave.

Well-defined EUV wave associated with a CME-driven shock

Science.gov (United States)

Cunha-Silva, R. D.; Selhorst, C. L.; Fernandes, F. C. R.; Oliveira e Silva, A. J.

2018-05-01

Aims: We report on a well-defined EUV wave observed by the Extreme Ultraviolet Imager (EUVI) on board the Solar Terrestrial Relations Observatory (STEREO) and the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). The event was accompanied by a shock wave driven by a halo CME observed by the Large Angle and Spectrometric Coronagraph (LASCO-C2/C3) on board the Solar and Heliospheric Observatory (SOHO), as evidenced by the occurrence of type II bursts in the metric and dekameter-hectometric wavelength ranges. We investigated the kinematics of the EUV wave front and the radio source with the purpose of verifying the association between the EUV wave and the shock wave. Methods: The EUV wave fronts were determined from the SDO/AIA images by means of two appropriate directions (slices). The heights (radial propagation) of the EUV wave observed by STEREO/EUVI and of the radio source associated with the shock wave were compared considering the whole bandwidth of the harmonic lane of the radio emission, whereas the speed of the shock was estimated using the lowest frequencies of the harmonic lane associated with the undisturbed corona, using an appropriate multiple of the Newkirk (1961, ApJ, 133, 983) density model and taking into account the H/F frequency ratio fH/fF = 2. The speed of the radio source associated with the interplanetary shock was determined using the Mann et al. (1999, A&A, 348, 614) density model. Results: The EUV wave fronts determined from the SDO/AIA images revealed the coexistence of two types of EUV waves, a fast one with a speed of 560 km s-1, and a slower one with a speed of 250 km s-1, which corresponds approximately to one-third of the average speed of the radio source ( 680 km s-1). The radio signature of the interplanetary shock revealed an almost constant speed of 930 km s-1, consistent with the linear speed of the halo CME (950 km s-1) and with the values found for the accelerating coronal shock ( 535-823 km s-1

EUV-angle resolved scatter (EUV-ARS): a new tool for the characterization of nanometre structures

Science.gov (United States)

Fernández Herrero, Analía.; Mentzel, Heiko; Soltwisch, Victor; Jaroslawzew, Sina; Laubis, Christian; Scholze, Frank

2018-03-01

The advance of the semiconductor industry requires new metrology methods, which can deal with smaller and more complex nanostructures. Particularly for inline metrology a rapid, sensitive and non destructive method is needed. Small angle X-ray scattering under grazing incidence has already been investigated for this application and delivers significant statistical information which tracks the profile parameters as well as their variations, i.e. roughness. However, it suffers from the elongated footprint at the sample. The advantage of EUV radiation, with its longer wavelengths, is that larger incidence angles can be used, resulting in a significant reduction of the beam footprint. Targets with field sizes of 100 μm and smaller are accessible with our experimental set-up. We present a new experimental tool for the measurement of small structures based on the capabilities of soft X-ray and EUV scatterometry at the PTB soft X-ray beamline at the electron storage ring BESSY II. PTB's soft X-ray radiometry beamline uses a plane grating monochromator, which covers the spectral range from 0.7 nm to 25 nm and was especially designed to provide highly collimated radiation. An area detector covers the scattered radiation from a grazing exit angle up to an angle of 30° above the sample horizon and the fluorescence emission can be detected with an energy dispersive X-ray silicon drift detector. In addition, the sample can be rotated and linearly moved in vacuum. This new set-up will be used to explore the capabilities of EUV-scatterometry for the characterization of nanometre-sized structures.

Polymer Masks for nanostructuring of graphene

DEFF Research Database (Denmark)

Shvets, Violetta

This PhD project is a part of Center for Nanostructured Graphene (CNG) activities. The aim of the project is to develop a new lithography method for creation of highly ordered nanostructures with as small as possible feature and period sizes. The method should be applicable for graphene nanostruc...... demonstrated the opening of what could be interpreted as a band gap....... polymer masks is developed. Mask fabrication is realized by microtoming of 30-60 nm thin sections from pre-aligned polymer monoliths with different morphologies. The resulting polymer masks are then transferred to both silicon and graphene substrates. Hexagonally packed hole patterns with 10 nm hole...

EUV sources for the alpha-tools

Science.gov (United States)

Pankert, Joseph; Apetz, Rolf; Bergmann, Klaus; Damen, Marcel; Derra, Günther; Franken, Oliver; Janssen, Maurice; Jonkers, Jeroen; Klein, Jürgen; Kraus, Helmar; Krücken, Thomas; List, Andreas; Loeken, Micheal; Mader, Arnaud; Metzmacher, Christof; Neff, Willi; Probst, Sven; Prümmer, Ralph; Rosier, Oliver; Schwabe, Stefan; Seiwert, Stefan; Siemons, Guido; Vaudrevange, Dominik; Wagemann, Dirk; Weber, Achim; Zink, Peter; Zitzen, Oliver

2006-03-01

In this paper, we report on the recent progress of the Philips Extreme UV source. The Philips source concept is based on a discharge plasma ignited in a Sn vapor plume that is ablated by a laser pulse. Using rotating electrodes covered with a regenerating tin surface, the problems of electrode erosion and power scaling are fundamentally solved. Most of the work of the past year has been dedicated to develop a lamp system which is operating very reliably and stable under full scanner remote control. Topics addressed were the development of the scanner interface, a dose control system, thermo-mechanical design, positional stability of the source, tin handling, and many more. The resulting EUV source-the Philips NovaTin(R) source-can operate at more than 10kW electrical input power and delivers 200W in-band EUV into 2π continuously. The source is very small, so nearly 100% of the EUV radiation can be collected within etendue limits. The lamp system is fully automated and can operate unattended under full scanner remote control. 500 Million shots of continuous operation without interruption have been realized, electrode lifetime is at least 2 Billion shots. Three sources are currently being prepared, two of them will be integrated into the first EUV Alpha Demonstration tools of ASML. The debris problem was reduced to a level which is well acceptable for scanner operation. First, a considerable reduction of the Sn emission of the source has been realized. The debris mitigation system is based on a two-step concept using a foil trap based stage and a chemical cleaning stage. Both steps were improved considerably. A collector lifetime of 1 Billion shots is achieved, after this operating time a cleaning would be applied. The cleaning step has been verified to work with tolerable Sn residues. From the experimental results, a total collector lifetime of more than 10 Billion shots can be expected.

EB and EUV lithography using inedible cellulose-based biomass resist material

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Patterning of self-assembled monolayers by phase-shifting mask and its applications in large-scale assembly of nanowires

Energy Technology Data Exchange (ETDEWEB)

Gao, Fan; Zhang, Dakuan; Wang, Jianyu; Sheng, Yun; Wang, Xinran; Chen, Kunji; Zhou, Minmin [Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Yan, Shancheng [Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China); Shen, Jiancang; Pan, Lijia; Shi, Yi, E-mail: yshi@nju.edu.cn [Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Micro-structures, Nanjing University, Nanjing 210093 (China)

2015-01-26

A nonselective micropatterning method of self-assembled monolayers (SAMs) based on laser and phase-shifting mask (PSM) is demonstrated. Laser beam is spatially modulated by a PSM, and periodic SAM patterns are generated sequentially through thermal desorption. Patterned wettability is achieved with alternating hydrophilic/hydrophobic stripes on octadecyltrichlorosilane monolayers. The substrate is then used to assemble CdS semiconductor nanowires (NWs) from a solution, obtaining well-aligned NWs in one step. Our results show valuably the application potential of this technique in engineering SAMs for integration of functional devices.

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

Science.gov (United States)

Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

Theoretical study of magnetic pattern replication by He+ ion irradiation through stencil masks

International Nuclear Information System (INIS)

Devolder, T.; Chappert, C.; Bernas, H.

2002-01-01

We have developed an irradiation technique that allows us to tune the magnetic properties of Co/Pt multilayers without affecting their roughness. The planarity and the ability to independently control nanostructure size and coercivity make our technique very appealing for magnetic recording. We study the irradiation-induced 1:1 replication of features drilled in a stencil mask. Both the 'gap' G between the magnetic film and the mask, and the aspect ratio (AR) of the mask features are analyzed, in view of the ion straggling in the mask resulting in collateral damages. Optimal gap is such that D<< G<< D/tan(α) (typically 0.1<< G<<25 μm), where the D is the feature size. The replication quality is best for AR≥3. Since the allowed gap interval is wide, we anticipate that mask fast positioning will be possible for the applications to magnetic recording

Extreme ultraviolet (EUV) solar spectral irradiance (SSI) for ionospheric application - history and contemporary state-of-art

Science.gov (United States)

Schmidtke, G.; Jacobi, Ch.; Nikutowski, B.; Erhardt, Ch.

2014-11-01

After a historical survey of space related EUV measurements in Germany and the role of Karl Rawer in pursuing this work, we describe present developments in EUV spectroscopy and provide a brief outlook on future activities. The group of Karl Rawer has performed the first scientific space project in Western Europe on 19th October 1954. Then it was decided to include the field of solar EUV spectroscopy in ionospheric investigations. Starting in 1957 an intensified development of instrumentation was going on to explore solar EUV radiation, atmospheric airglow and auroral emissions until the institute had to stop space activities in the early nineteen-eighties. EUV spectroscopy was continued outside of the institute during eight years. This area of work was supported again by the institute developing the Auto-Calibrating Spectrometers (SolACES) for a mission on the International Space Station (ISS). After more than six years in space the instrument is still in operation. Meanwhile the work on the primary task also to validate EUV data available from other space missions has made good progress. The first results of validating those data and combine them into one set of EUV solar spectral irradiance are very promising. It will be recommended for using it by the science and application community. Moreover, a new low-cost type of an EUV spectrometer is presented for monitoring the solar EUV radiation. It shall be further developed for providing EUV-TEC data to be applied in ionospheric models replacing the Covington index F10.7. Applying these data for example in the GNSS signal evaluation a more accurate determination of GNSS receiver positions is expected for correcting the propagation delays of navigation signals traveling through the ionosphere from space to earth. - Latest results in the field of solar EUV spectroscopy are discussed, too.

Stellar and Laboratory XUV/EUV Line Ratios in Fe XVIII and Fe XIX

Science.gov (United States)

Träbert, Elmar; Beiersdorfer, P.; Clementson, J.

2011-09-01

A so-called XUV excess has been suspected with the relative fluxes of Fe XVIII and Fe XIX lines in XUV and EUV spectra of the star Capella as observed by the Chandra spacecraft [1] when comparing the observations with simulations of stellar spectra based on APEC or FAC. We have addressed this problem by laboratory studies using the Livermore electron beam ion trap (EBIT). Our understanding of the EBIT spectrum is founded on work by Brown et al. [2]. The electron density of the electron beam in an EBIT is compatible to the density in energetic stellar flares. In our experiments, the relative detection efficiencies of two flat-field grating spectrographs operating in the EUV (near 100 Å) and XUV (near 16 Å) ranges have been determined using the calculated branching ratio of 1-3 and 2-3 transition in the H-like spectrum O VIII. FAC calculations assuming several electron beam energies and electron densities serve to correct the EBIT observations for the Maxwellian excitation in a natural plasma. In the EUV, the line intensity pattern predicted by FAC agrees reasonably well with the laboratory and Capella observations. In the XUV wavelength range, agreement of laboratory and astrophysical line intensities is patchy. The spectral simulation results from FAC are much closer to stellar and laboratory observation than those obtained by APEC. Instead of claiming an XUV excess, the XUV/EUV line intensities can be explained by a somewhat higher temperature of Capella than the previously assumed T=6 MK. This work was performed under the auspices of the USDoE by LLNL under Contract DE-AC52-07NA27344 and was supported by the NASA under work order NNH07AF81I issued by the APRA Program. E.T. acknowledges support by DFG Germany. 1. P. Desai et al., ApJ 625, L59 (2005). 2. G. V. Brown et al., ApJS 140, 589 (2002).

Masking interrupts figure-ground signals in V1.

Science.gov (United States)

Lamme, Victor A F; Zipser, Karl; Spekreijse, Henk

2002-10-01

In a backward masking paradigm, a target stimulus is rapidly (figure-ground segregation can be recorded. Here, we recorded from awake macaque monkeys, engaged in a task where they had to detect figures from background in a pattern backward masking paradigm. We show that the V1 figure-ground signals are selectively and fully suppressed at target-mask intervals that psychophysically result in the target being invisible. Initial response transients, signalling the features that make up the scene, are not affected. As figure-ground modulations depend on feedback from extrastriate areas, these results suggest that masking selectively interrupts the recurrent interactions between V1 and higher visual areas.

Mechanical and thermal modeling of the SCALPEL mask

International Nuclear Information System (INIS)

Martin, C. J.; Semke, W. H.; Dicks, G. A.; Engelstad, R. L.; Lovell, E. G.; Liddle, J. A.; Novembre, A. E.

1999-01-01

Scattering with angular limitation projection electron-beam lithography (SCALPEL) is being developed by Lucent Technologies for sub-130 nm lithography. The mask fabrication and exposure processes produce mask distortions that result in pattern placement errors. In order to understand these distortions, and determine how to reduce them to levels consistent with the error budget, structural and heat transfer finite element models have been generated to simulate the mechanical and thermal response of the mask. In addition, sensitivity studies of the distortions due to key design parameters that may be used to refine the SCALPEL mask configuration have been conducted. (c) 1999 American Vacuum Society

PROJECTION EFFECTS IN CORONAL DIMMINGS AND ASSOCIATED EUV WAVE EVENT

Energy Technology Data Exchange (ETDEWEB)

Dissauer, K.; Temmer, M.; Veronig, A. M.; Vanninathan, K. [IGAM/Institute of Physics, University of Graz, Universitätsplatz 5/II, A-8010 Graz (Austria); Magdalenić, J., E-mail: karin.dissauer@uni-graz.at [Solar-Terrestrial Center of Excellence-SIDC, Royal Observatory of Belgium, Av. Circulaire 3, B-1180 Brussels (Belgium)

2016-10-20

We investigate the high-speed ( v > 1000 km s{sup −1}) extreme-ultraviolet (EUV) wave associated with an X1.2 flare and coronal mass ejection (CME) from NOAA active region 11283 on 2011 September 6 (SOL2011-09-06T22:12). This EUV wave features peculiar on-disk signatures; in particular, we observe an intermittent “disappearance” of the front for 120 s in Solar Dynamics Observatory ( SDO )/AIA 171, 193, 211 Å data, whereas the 335 Å filter, sensitive to hotter plasmas ( T ∼ 2.5 MK), shows a continuous evolution of the wave front. The eruption was also accompanied by localized coronal dimming regions. We exploit the multi-point quadrature position of SDO and STEREO-A , to make a thorough analysis of the EUV wave evolution, with respect to its kinematics and amplitude evolution and reconstruct the SDO line-of-sight (LOS) direction of the identified coronal dimming regions in STEREO-A . We show that the observed intensities of the dimming regions in SDO /AIA depend on the structures that are lying along their LOS and are the combination of their individual intensities, e.g., the expanding CME body, the enhanced EUV wave, and the CME front. In this context, we conclude that the intermittent disappearance of the EUV wave in the AIA 171, 193, and 211 Å filters, which are channels sensitive to plasma with temperatures below ∼2 MK is also caused by such LOS integration effects. These observations clearly demonstrate that single-view image data provide us with limited insight to correctly interpret coronal features.

Simulating Visual Pattern Detection and Brightness Perception Based on Implicit Masking

Directory of Open Access Journals (Sweden)

Yang Jian

2007-01-01

Full Text Available A quantitative model of implicit masking, with a front-end low-pass filter, a retinal local compressive nonlinearity described by a modified Naka-Rushton equation, a cortical representation of the image in the Fourier domain, and a frequency-dependent compressive nonlinearity, was developed to simulate visual image processing. The model algorithm was used to estimate contrast sensitivity functions over 7 mean illuminance levels ranging from 0.0009 to 900 trolands, and fit to the contrast thresholds of 43 spatial patterns in the Modelfest study. The RMS errors between model estimations and experimental data in the literature were about 0.1 log unit. In addition, the same model was used to simulate the effects of simultaneous contrast, assimilation, and crispening. The model results matched the visual percepts qualitatively, showing the value of integrating the three diverse perceptual phenomena under a common theoretical framework.

Metal oxide multilayer hard mask system for 3D nanofabrication

Science.gov (United States)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

High performance EUV multilayer structures insensitive to capping layer optical parameters.

Science.gov (United States)

Pelizzo, Maria Guglielmina; Suman, Michele; Monaco, Gianni; Nicolosi, Piergiorgio; Windt, David L

2008-09-15

We have designed and tested a-periodic multilayer structures containing protective capping layers in order to obtain improved stability with respect to any possible changes of the capping layer optical properties (due to oxidation and contamination, for example)-while simultaneously maximizing the EUV reflection efficiency for specific applications, and in particular for EUV lithography. Such coatings may be particularly useful in EUV lithographic apparatus, because they provide both high integrated photon flux and higher stability to the harsh operating environment, which can affect seriously the performance of the multilayer-coated projector system optics. In this work, an evolutive algorithm has been developed in order to design these a-periodic structures, which have been proven to have also the property of stable performance with respect to random layer thickness errors that might occur during coating deposition. Prototypes have been fabricated, and tested with EUV and X-ray reflectometry, and secondary electron spectroscopy. The experimental results clearly show improved performance of our new a-periodic coatings design compared with standard periodic multilayer structures.

High-resolution, high-throughput, positive-tone patterning of poly(ethylene glycol by helium beam exposure through stencil masks.

Directory of Open Access Journals (Sweden)

Eliedonna E Cacao

Full Text Available In this work, a collimated helium beam was used to activate a thiol-poly(ethylene glycol (SH-PEG monolayer on gold to selectively capture proteins in the exposed regions. Protein patterns were formed at high throughput by exposing a stencil mask placed in proximity to the PEG-coated surface to a broad beam of helium particles, followed by incubation in a protein solution. Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy (ATR-FTIR spectra showed that SH-PEG molecules remain attached to gold after exposure to beam doses of 1.5-60 µC/cm(2 and incubation in PBS buffer for one hour, as evidenced by the presence of characteristic ether and methoxy peaks at 1120 cm(-1 and 2870 cm(-1, respectively. X-ray Photoelectron Spectroscopy (XPS spectra showed that increasing beam doses destroy ether (C-O bonds in PEG molecules as evidenced by the decrease in carbon C1s peak at 286.6 eV and increased alkyl (C-C signal at 284.6 eV. XPS spectra also demonstrated protein capture on beam-exposed PEG regions through the appearance of a nitrogen N1s peak at 400 eV and carbon C1s peak at 288 eV binding energies, while the unexposed PEG areas remained protein-free. The characteristic activities of avidin and horseradish peroxidase were preserved after attachment on beam-exposed regions. Protein patterns created using a 35 µm mesh mask were visualized by localized formation of insoluble diformazan precipitates by alkaline phosphatase conversion of its substrate bromochloroindoyl phosphate-nitroblue tetrazolium (BCIP-NBT and by avidin binding of biotinylated antibodies conjugated on 100 nm gold nanoparticles (AuNP. Patterns created using a mask with smaller 300 nm openings were detected by specific binding of 40 nm AuNP probes and by localized HRP-mediated deposition of silver nanoparticles. Corresponding BSA-passivated negative controls showed very few bound AuNP probes and little to no enzymatic formation of diformazan precipitates or silver

Demagnifying electron projection with grid masks

International Nuclear Information System (INIS)

Politycki, A.; Meyer, A.

1978-01-01

Tightly toleranced micro- and submicrostructures with smooth edges were realized by using transmission masks with an improved supporting grid (width of traverses 0.8 μm). Local edge shift due to the proximity effect is kept at a minimum. Supporting grids with stil narrower traverses (0.5 μm) were prepared by generating the grid pattern by electron beam writing. Masks of this kind allow projection at a demagnification ratio of 1:4, resulting in large image fields. (orig.) [de

Characterization of EUV induced carbon films using laser-generated surface acoustic waves

NARCIS (Netherlands)

Chen, Juequan; Lee, Christopher James; Louis, Eric; Bijkerk, Frederik; Kunze, Reinhard; Schmidt, Hagen; Schneider, Dieter; Moors, Roel

2009-01-01

The deposition of carbon layers on the surfaces of optics exposed to extreme ultraviolet (EUV) radiation has been observed in EUV lithography. It has become of critical importance to detect the presence of the carbon layer in the order of nanometer thickness due to carbon's extremely strong

Proximity effect on patterning characteristics of hole patterns in synchrotron radiation lithography

International Nuclear Information System (INIS)

Somemura, Yoh; Deguchi, Kimiyoshi; Miyoshi, Kazunori

1994-01-01

This paper reports the results of analyzing the proximity effect on the patterning characteristics for plural neighboring hole patterns in synchrotron radiation lithography. Fresnel diffraction simulation was used and pattern replication experiments were performed with pattern pitch, proximity gap, and mask contrast as parameters. Even when the pattern pitch (hole:space) is 1:1, pattern sizes down to 0.2 μm can be replicated with a large dose margin under a large proximity gap condition up to 40 μm, irrespective of the mask contrast. A low-contrast (2.5) mask has an advantage over the conventional-contrast (7) mask in that it allows the use of a larger proximity gap when replicating hole patterns with a size of 0.1-0.2 μm. Moreover, the phase-shifting mask we previously proposed improves the exposure latitude and widens the proximity gap, so that it is possible to use a 20-μm gap to replicate 0.1-μm hole patterns for a pitch of 1:1 and to use a 30-μm gap for a pitch of 1:2. (author)

EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

Science.gov (United States)

Putna, E. Steve; Younkin, Todd R.; Leeson, Michael; Caudillo, Roman; Bacuita, Terence; Shah, Uday; Chandhok, Manish

2011-04-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 22nm half pitch node and beyond. According to recent assessments made at the 2010 EUVL Symposium, the readiness of EUV materials remains one of the top risk items for EUV adoption. The main development issue regarding EUV resists has been how to simultaneously achieve high resolution, high sensitivity, and low line width roughness (LWR). This paper describes our strategy, the current status of EUV materials, and the integrated post-development LWR reduction efforts made at Intel Corporation. Data collected utilizing Intel's Micro- Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits <=22nm half-pitch (HP) L/S resolution at <=11.3mJ/cm2 with <=3nm LWR.

Joint optimization of source, mask, and pupil in optical lithography

Science.gov (United States)

Li, Jia; Lam, Edmund Y.

2014-03-01

Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

Cycle time reduction by Html report in mask checking flow

Science.gov (United States)

Chen, Jian-Cheng; Lu, Min-Ying; Fang, Xiang; Shen, Ming-Feng; Ma, Shou-Yuan; Yang, Chuen-Huei; Tsai, Joe; Lee, Rachel; Deng, Erwin; Lin, Ling-Chieh; Liao, Hung-Yueh; Tsai, Jenny; Bowhill, Amanda; Vu, Hien; Russell, Gordon

2017-07-01

The Mask Data Correctness Check (MDCC) is a reticle-level, multi-layer DRC-like check evolved from mask rule check (MRC). The MDCC uses extended job deck (EJB) to achieve mask composition and to perform a detailed check for positioning and integrity of each component of the reticle. Different design patterns on the mask will be mapped to different layers. Therefore, users may be able to review the whole reticle and check the interactions between different designs before the final mask pattern file is available. However, many types of MDCC check results, such as errors from overlapping patterns usually have very large and complex-shaped highlighted areas covering the boundary of the design. Users have to load the result OASIS file and overlap it to the original database that was assembled in MDCC process on a layout viewer, then search for the details of the check results. We introduce a quick result-reviewing method based on an html format report generated by Calibre® RVE. In the report generation process, we analyze and extract the essential part of result OASIS file to a result database (RDB) file by standard verification rule format (SVRF) commands. Calibre® RVE automatically loads the assembled reticle pattern and generates screen shots of these check results. All the processes are automatically triggered just after the MDCC process finishes. Users just have to open the html report to get the information they need: for example, check summary, captured images of results and their coordinates.

High-Resolution EUV Spectroscopy of White Dwarfs

Science.gov (United States)

Kowalski, Michael P.; Wood, K. S.; Barstow, M. A.

2014-01-01

We compare results of high-resolution EUV spectroscopic measurements of the isolated white dwarf G191-B2B and the binary system Feige 24 obtained with the J-PEX (Joint Plasmadynamic Experiment), which was sponsored jointly by the U.S. Naval Research Laboratory and NASA. J-PEX delivers the world's highest resolution in EUV and does so at high effective area (e.g., more effective area in a sounding rocket than is available with Chandra at adjacent energies, but in a waveband Chandra cannot reach). The capability J-PEX represents is applicable to the astrophysics of hot plasmas in stellar coronae, white dwarfs and the ISM. G191-B2B and Feige 24 are quite distinct hot white dwarf systems having in common that they are bright in the portion of the EUV where He emission features and edges occur, hence they can be exploited to probe both the stellar atmosphere and the ISM, separating those components by model-fitting that sums over all relevant (He) spectral features in the band. There is evidence from these fits that atmospheric He is being detected but the result is more conservatively cast as a pair of upper limits. We discuss how longer duration satellite observations with the same instrumentation could increase exposure to detect atmospheric He in these and other nearby hot white dwarfs.

Active mask segmentation of fluorescence microscope images.

Science.gov (United States)

Srinivasa, Gowri; Fickus, Matthew C; Guo, Yusong; Linstedt, Adam D; Kovacević, Jelena

2009-08-01

We propose a new active mask algorithm for the segmentation of fluorescence microscope images of punctate patterns. It combines the (a) flexibility offered by active-contour methods, (b) speed offered by multiresolution methods, (c) smoothing offered by multiscale methods, and (d) statistical modeling offered by region-growing methods into a fast and accurate segmentation tool. The framework moves from the idea of the "contour" to that of "inside and outside," or masks, allowing for easy multidimensional segmentation. It adapts to the topology of the image through the use of multiple masks. The algorithm is almost invariant under initialization, allowing for random initialization, and uses a few easily tunable parameters. Experiments show that the active mask algorithm matches the ground truth well and outperforms the algorithm widely used in fluorescence microscopy, seeded watershed, both qualitatively, as well as quantitatively.

Physical processes in EUV sources for microlithography

International Nuclear Information System (INIS)

Banine, V Y; Swinkels, G H P M; Koshelev, K N

2011-01-01

The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL tool operates at a wavelength of 13.5 nm, which requires the following new developments. - The light production mechanism changes from conventional lamps and lasers to relatively high-temperature emitting plasmas. - The light transport, mainly refractive for deep ultraviolet (DUV), should be reflective for EUV. - The source specifications as derived from the customer requirements on wafer throughput mean that the output EUV source power has to be hundreds of watts. This in its turn means that tens to hundreds of kilowatts of dissipated power has to be managed in a relatively small volume. - In order to keep lithography costs as low as possible, the lifetime of the components should be as long as possible and at least of the order of thousands of hours. This poses a challenge for the sources, namely how to design and manufacture components robust enough to withstand the intense environment of high heat dissipation, flows of several keV ions as well as the atomic and particular debris within the source vessel. - As with all lithography tools, the imaging requirements demand a narrow illumination bandwidth. Absorption of materials at EUV wavelengths is extreme with extinguishing lengths of the order of tens of nanometres, so the balance between high transmission and spectral purity requires careful engineering. All together, EUV lithography sources present technological challenges in various fields of physics such as plasma, optics and material science. These challenges are being tackled by the source manufacturers and investigated extensively in the research facilities around the world. An overview of the published results on the topic as well as the analyses of the physical processes behind the proposed solutions will be presented in this paper. (topical review)

Propagation of resist heating mask error to wafer level

Science.gov (United States)

Babin, S. V.; Karklin, Linard

2006-10-01

As technology is approaching 45 nm and below the IC industry is experiencing a severe product yield hit due to rapidly shrinking process windows and unavoidable manufacturing process variations. Current EDA tools are unable by their nature to deliver optimized and process-centered designs that call for 'post design' localized layout optimization DFM tools. To evaluate the impact of different manufacturing process variations on final product it is important to trace and evaluate all errors through design to manufacturing flow. Photo mask is one of the critical parts of this flow, and special attention should be paid to photo mask manufacturing process and especially to mask tight CD control. Electron beam lithography (EBL) is a major technique which is used for fabrication of high-end photo masks. During the writing process, resist heating is one of the sources for mask CD variations. Electron energy is released in the mask body mainly as heat, leading to significant temperature fluctuations in local areas. The temperature fluctuations cause changes in resist sensitivity, which in turn leads to CD variations. These CD variations depend on mask writing speed, order of exposure, pattern density and its distribution. Recent measurements revealed up to 45 nm CD variation on the mask when using ZEP resist. The resist heating problem with CAR resists is significantly smaller compared to other types of resists. This is partially due to higher resist sensitivity and the lower exposure dose required. However, there is no data yet showing CD errors on the wafer induced by CAR resist heating on the mask. This effect can be amplified by high MEEF values and should be carefully evaluated at 45nm and below technology nodes where tight CD control is required. In this paper, we simulated CD variation on the mask due to resist heating; then a mask pattern with the heating error was transferred onto the wafer. So, a CD error on the wafer was evaluated subject to only one term of the

Masking of Time-Frequency Patterns in Applications of Passive Underwater Target Detection

Directory of Open Access Journals (Sweden)

Jüri Sildam

2010-01-01

Full Text Available Spectrogram analysis of acoustical sounds for underwater target classification is utilized when loud nonstationary interference sources overlap with a signal of interest in time but can be separated in time-frequency (TF domain. We propose a signal masking method which in a TF plane combines local statistical and morphological features of the signal of interest. A dissimilarity measure D of adjacent TF cells is used for local estimation of entropy H, followed by estimation of ΔH=Htc−Hfc entropy difference, where Hfc is calculated along the time axis at a mean frequency fc and Htc is calculated along the frequency axis at a mean time tc of the TF window, respectively. Due to a limited number of points used in ΔH estimation, the number of possible ΔH values, which define a primary mask, is also limited. A secondary mask is defined using morphological operators applied to, for example, H and ΔH. We demonstrate how primary and secondary masks can be used for signal detection and discrimination, respectively. We also show that the proposed approach can be generalized within the framework of Genetic Programming.

Masked priming effect reflects evidence accumulated by the prime.

Science.gov (United States)

Kinoshita, Sachiko; Norris, Dennis

2010-01-01

In the same-different match task, masked priming is observed with the same responses but not different responses. Norris and Kinoshita's (2008) Bayesian reader account of masked priming explains this pattern based on the same principle as that explaining the absence of priming for nonwords in the lexical decision task. The pattern of priming follows from the way the model makes optimal decisions in the two tasks; priming does not depend on first activating the prime and then the target. An alternative explanation is in terms of a bias towards responding "same" that exactly counters the facilitatory effect of lexical access. The present study tested these two views by varying both the degree to which the prime predicts the response and the visibility of the prime. Unmasked primes produced effects expected from the view that priming is influenced by the degree to which the prime predicts the response. In contrast, with masked primes, the size of priming for the same response was completely unaffected by predictability. These results rule out response bias as an explanation of the absence of masked priming for different responses and, in turn, indicate that masked priming is not a consequence of automatic lexical access of the prime.

TESIS experiment on EUV imaging spectroscopy of the Sun

Science.gov (United States)

Kuzin, S. V.; Bogachev, S. A.; Zhitnik, I. A.; Pertsov, A. A.; Ignatiev, A. P.; Mitrofanov, A. M.; Slemzin, V. A.; Shestov, S. V.; Sukhodrev, N. K.; Bugaenko, O. I.

2009-03-01

TESIS is a set of solar imaging instruments in development by the Lebedev Physical Institute of the Russian Academy of Science, to be launched aboard the Russian spacecraft CORONAS-PHOTON in December 2008. The main goal of TESIS is to provide complex observations of solar active phenomena from the transition region to the inner and outer solar corona with high spatial, spectral and temporal resolution in the EUV and Soft X-ray spectral bands. TESIS includes five unique space instruments: the MgXII Imaging Spectroheliometer (MISH) with spherical bent crystal mirror, for observations of the Sun in the monochromatic MgXII 8.42 Å line; the EUV Spectoheliometer (EUSH) with grazing incidence difraction grating, for the registration of the full solar disc in monochromatic lines of the spectral band 280-330 Å; two Full-disk EUV Telescopes (FET) with multilayer mirrors covering the band 130-136 and 290-320 Å; and the Solar EUV Coronagraph (SEC), based on the Ritchey-Chretien scheme, to observe the inner and outer solar corona from 0.2 to 4 solar radii in spectral band 290-320 Å. TESIS experiment will start at the rising phase of the 24th cycle of solar activity. With the advanced capabilities of its instruments, TESIS will help better understand the physics of solar flares and high-energy phenomena and provide new data on parameters of solar plasma in the temperature range 10-10K. This paper gives a brief description of the experiment, its equipment, and its scientific objectives.

Active Mask Segmentation of Fluorescence Microscope Images

OpenAIRE

Srinivasa, Gowri; Fickus, Matthew C.; Guo, Yusong; Linstedt, Adam D.; Kovačević, Jelena

2009-01-01

We propose a new active mask algorithm for the segmentation of fluorescence microscope images of punctate patterns. It combines the (a) flexibility offered by active-contour methods, (b) speed offered by multiresolution methods, (c) smoothing offered by multiscale methods, and (d) statistical modeling offered by region-growing methods into a fast and accurate segmentation tool. The framework moves from the idea of the “contour” to that of “inside and outside”, or, masks, allowing for easy mul...

Mask design and fabrication in coded aperture imaging

International Nuclear Information System (INIS)

Shutler, Paul M.E.; Springham, Stuart V.; Talebitaher, Alireza

2013-01-01

We introduce the new concept of a row-spaced mask, where a number of blank rows are interposed between every pair of adjacent rows of holes of a conventional cyclic difference set based coded mask. At the cost of a small loss in signal-to-noise ratio, this can substantially reduce the number of holes required to image extended sources, at the same time increasing mask strength uniformly across the aperture, as well as making the mask automatically self-supporting. We also show that the Finger and Prince construction can be used to wrap any cyclic difference set onto a two-dimensional mask, regardless of the number of its pixels. We use this construction to validate by means of numerical simulations not only the performance of row-spaced masks, but also the pixel padding technique introduced by in ’t Zand. Finally, we provide a computer program CDSGEN.EXE which, on a fast modern computer and for any Singer set of practical size and open fraction, generates the corresponding pattern of holes in seconds

EUV spectrum of highly charged tungsten ions in electron beam ion trap

International Nuclear Information System (INIS)

Sakaue, H.A.; Kato, D.; Murakami, I.; Nakamura, N.

2016-01-01

We present spectra of highly charged tungsten ions in the extreme ultra-violet (EUV) by using electron beam ion traps. The electron energy dependence of spectra was investigated for electron energy from 540 to 1370 eV. Previously unreported lines were presented in the EUV range, and comparing the wavelengths with theoretical calculations identified them. (author)

Fabrication of micro- and nano-structured materials using mask-less processes

International Nuclear Information System (INIS)

Roy, Sudipta

2007-01-01

Micro- and nano-scale devices are used in electronics, micro-electro- mechanical, bio-analytical and medical components. An essential step for the fabrication of such small scale devices is photolithography. Photolithography requires a master mask to transfer micrometre or sub-micrometre scale patterns onto a substrate. The requirement of a physical, rigid mask can impede progress in applications which require rapid prototyping, flexible substrates, multiple alignment and 3D fabrication. Alternative technologies, which do not require the use of a physical mask, are suitable for these applications. In this paper mask-less methods of micro- and nano-scale fabrication have been discussed. The most common technique, which is the laser direct imaging (LDI), technique has been applied to fabricate micrometre scale structures on printed circuit boards, glass and epoxy. LDI can be combined with chemical methods to deposit metals, inorganic materials as well as some organic entities at the micrometre scale. Inkjet technology can be used to fabricate micrometre patterns of etch resists, organic transistors as well as arrays for bioanalysis. Electrohydrodynamic atomisation is used to fabricate micrometre scale ceramic features. Electrochemical methodologies offer a variety of technical solutions for micro- and nano-fabrication owing to the fact that electron charge transfer can be constrained to a solid-liquid interface. Electrochemical printing is an adaptation of inkjet printing which can be used for rapid prototyping of metallic circuits. Micro-machining using nano-second voltage pulses have been used to fabricate high precision features on metals and semiconductors. Optimisation of reactor, electrochemistry and fluid flow (EnFACE) has also been employed to transfer micrometre scale patterns on a copper substrate. Nano-scale features have been fabricated by using specialised tools such as scanning tunnelling microscopy, atomic force microscopy and focused ion beam. The

How the global layout of the mask influences masking strength.

Science.gov (United States)

Ghose, Tandra; Hermens, Frouke; Herzog, Michael H

2012-12-10

In visual backward masking, the perception of a target is influenced by a trailing mask. Masking is usually explained by local interactions between the target and the mask representations. However, recently it has been shown that the global spatial layout of the mask rather than its local structure determines masking strength (Hermens & Herzog, 2007). Here, we varied the mask layout by spatial, luminance, and temporal cues. We presented a vernier target followed by a mask with 25 elements. Performance deteriorated when the length of the two mask elements neighboring the target vernier was doubled. However, when the length of every second mask element was doubled, performance improved. When the luminance of the neighboring elements was doubled, performance also deteriorated but no improvement in performance was observed when every second element had a double luminance. For temporal manipulations, a complex nonmonotonic masking function was observed. Hence, changes in the mask layout by spatial, luminance, and temporal cues lead to highly different results.

Studies of EUV contamination mitigation

Science.gov (United States)

Graham, Samual, Jr.; Malinowski, Michael E.; Steinhaus, Chip; Grunow, Philip A.; Klebanoff, Leonard E.

2002-07-01

Carbon contamination removal was investigated using remote RF-O2, RF-H2, and atomic hydrogen experiments. Samples consisted of silicon wafers coated with 100 Angstrom sputtered carbon, as well as bare Si-capped Mo/Si optics. Samples were exposed to atomic hydrogen or RF plasma discharges at 100 W, 200 W, and 300 W. Carbon removal rate, optic oxidation rate, at-wavelength (13.4 nm) peak reflectance, and optic surface roughness were characterized. Data show that RF- O2 removes carbon at a rate approximately 6 times faster RF- H2 for a given discharge power. However, both cleaning techniques induce Mo/Si optic degradation through the loss of reflectivity associated with surface oxide growth for RF-O2 and an unknown mechanism with hydrogen cleaning. Atomic hydrogen cleaning shows carbon removal rates sufficient for use as an in-situ cleaning strategy for EUVoptics with less risk of optic degradation from overexposures than RF-discharge cleaning. While hydrogen cleaning (RF and atomic) of EUV optics has proven effective in carbon removal, attempts to dissociate hydrogen in co-exposures with EUV radiation have resulted in no detectable removal of carbon contamination.

Noninvasive CPAP with face mask: comparison among new air-entrainment masks and the Boussignac valve.

Science.gov (United States)

Mistraletti, Giovanni; Giacomini, Matteo; Sabbatini, Giovanni; Pinciroli, Riccardo; Mantovani, Elena S; Umbrello, Michele; Palmisano, Debora; Formenti, Paolo; Destrebecq, Anne L L; Iapichino, Gaetano

2013-02-01

The performances of 2 noninvasive CPAP systems (high flow and low flow air-entrainment masks) were compared to the Boussignac valve in 3 different scenarios. Scenario 1: pneumatic lung simulator with a tachypnea pattern (tidal volume 800 mL at 40 breaths/min). Scenario 2: Ten healthy subjects studied during tidal breaths and tachypnea. Scenario 3: Twenty ICU subjects enrolled for a noninvasive CPAP session. Differences between set and effective CPAP level and F(IO(2)), as well as the lowest airway pressure and the pressure swing around the imposed CPAP level, were analyzed. The lowest airway pressure and swing were correlated to the pressure-time product (area of the airway pressure curve below the CPAP level) measured with the simulator. P(aO(2)) was a subject's further performance index. Lung simulator: Boussignac F(IO(2)) was 0.54, even if supplied with pure oxygen. The air-entrainment masks had higher swing than the Boussignac (P = .007). Pressure-time product correlated better with pressure swing (Spearman correlation coefficient [ρ] = 0.97) than with lowest airway pressure (ρ = 0.92). In healthy subjects, the high-flow air-entrainment mask showed lower difference between set and effective F(IO(2)) (P mask had lower swing than the Boussignac valve (P = .03) with similar P(aO(2)) increase. High-flow air-entrainment mask showed the best performance in human subjects. During high flow demand, the Boussignac valve delivered lower than expected F(IO(2)) and showed higher dynamic hyper-pressurization than the air-entrainment masks. © 2013 Daedalus Enterprises.

Highly Stable, Large Format EUV Imager, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Higher detection efficiency and better radiation tolerance imagers are needed for the next generation of EUV instruments. Previously, CCD technology has demonstrated...

A New Relationship Between Soft X-Rays and EUV Flare Light Curves

Science.gov (United States)

Thiemann, Edward

2016-05-01

Solar flares are the result of magnetic reconnection in the solar corona which converts magnetic energy into kinetic energy resulting in the rapid heating of solar plasma. As this plasma cools, it emits radiation at different EUV wavelengths when the dropping temperature passes a line’s temperature of formation. This results in a delay in the emissions from cooler EUV lines relative to hotter EUV lines. Therefore, characterizing how this hot plasma cools is important for understanding how the corresponding geo-effective extreme ultraviolet (EUV) irradiance evolves in time. I present a simple new framework in which to study flare cooling by using a Lumped Element Thermal Model (LETM). LETM is frequently used in science and engineering to simplify a complex multi-dimensional thermal system by reducing it to a 0-D thermal circuit. For example, a structure that conducts heat out of a system is simplified with a resistive element and a structure that allows a system to store heat is simplified with a capacitive element. A major advantage of LETM is that the specific geometry of a system can be ignored, allowing for an intuitive analysis of the major thermal processes. I show that LETM is able to accurately reproduce the temporal evolution of cooler flare emission lines based on hotter emission line evolution. In particular, it can be used to predict the evolution of EUV flare light curves using the NOAA X-Ray Sensor (XRS).

EUV-VUV photochemistry in the upper atmospheres of Titan and the early Earth

Science.gov (United States)

Imanaka, H.; Smith, M. A.

2010-12-01

Titan, the organic-rich moon of Saturn, possesses a thick atmosphere of nitrogen, globally covered with organic haze layers. The recent Cassini’s INMS and CAPS observations clearly demonstrate the importance of complex organic chemistry in the ionosphere. EUV photon radiation is the major driving energy source there. Our previous laboratory study of the EUV-VUV photolysis of N2/CH4 gas mixtures demonstrates a unique role of nitrogen photoionization in the catalytic formation of complex hydrocarbons in Titan’s upper atmosphere (Imanaka and Smith, 2007, 2009). Such EUV photochemistry could also have played important roles in the formation of complex organic molecules in the ionosphere of the early Earth. It has been suggested that the early Earth atmosphere may have contained significant amount of reduced species (CH4, H2, and CO) (Kasting, 1990, Pavlov et al., 2001, Tian et al., 2005). Recent experimental study, using photon radiation at wavelengths longer than 110 nm, demonstrates that photochemical organic haze could have been generated from N2/CO2 atmospheres with trace amounts of CH4 or H2 (Trainer et al., 2006, Dewitt et al., 2009). However, possible EUV photochemical processes in the ionosphere are not well understood. We have investigated the effect of CO2 in the possible EUV photochemical processes in simulated reduced early Earth atmospheres. The EUV-VUV photochemistry using wavelength-tunable synchrotron light between 50 - 150 nm was investigated for gas mixtures of 13CO2/CH4 (= 96.7/3.3) and N2/13CO2/CH4 (= 90/6.7/3.3). The onsets of unsaturated hydrocarbon formation were observed at wavelengths shorter than the ionization potentials of CO2 and N2, respectively. This correlation indicates that CO2 can play a similar catalytic role to N2 in the formation of heavy organic species, which implies that EUV photochemistry might have significant impact on the photochemical generation of organic haze layers in the upper atmosphere of the early Earth.

The EUV Helium Spectrum in the Quiet Sun: A By-Product of Coronal Emission?

Science.gov (United States)

Andretta, Vincenzo; DelZanna, Giulio; Jordan, Stuart D.; Oegerle, William (Technical Monitor)

2002-01-01

In this paper we test one of the mechanisms proposed to explain the intensities and other observed properties of the solar helium spectrum, and in particular of its Extreme-Ultraviolet (EUV) resonance lines. The so-called Photoionisation-Recombination (P-R) mechanism involves photoionisation of helium atoms and ions by EUV coronal radiation, followed by recombination cascades. We present calibrated measurements of EUV flux obtained with the two CDS spectrometers on board SOHO, in quiescent solar regions. We were able to obtain an essentially complete estimate of the total photoionizing flux in the wavelength range below 504 A (the photoionisation threshold for He(I)), as well as simultaneous measurements with the same instruments of the intensities of the strongest EUV helium lines: He(II) lambda304, He(I) lambda584, and He(I) lambda537. We find that there are not enough EUV photons to account for the observed helium line intensities. More specifically, we conclude that He(II) intensities cannot be explained by the P-R mechanism. Our results, however, leave open the possibility that the He(I) spectrum could be formed by the P-R mechanism, with the He(II) lambda304 line as a significant photoionizating source.

EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs

Science.gov (United States)

Putna, E. Steve; Younkin, Todd R.; Chandhok, Manish; Frasure, Kent

2009-03-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 32nm half-pitch node and beyond. Readiness of EUV materials is currently one high risk area according to assessments made at the 2008 EUVL Symposium. The main development issue regarding EUV resist has been how to simultaneously achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the strategy and current status of EUV resist development at Intel Corporation. Data is presented utilizing Intel's Micro-Exposure Tool (MET) examining the feasibility of establishing a resist process that simultaneously exhibits <=30nm half-pitch (HP) L/S resolution at <=10mJ/cm2 with <=4nm LWR.

Influence of mask type and mask position on the effectiveness of bag-mask ventilation in a neonatal manikin.

Science.gov (United States)

Deindl, Philipp; O'Reilly, Megan; Zoller, Katharina; Berger, Angelika; Pollak, Arnold; Schwindt, Jens; Schmölzer, Georg M

2014-01-01

Anatomical face mask with an air cushion rim might be placed accidentally in a false orientation on the newborn's face or filled with various amounts of air during neonatal resuscitation. Both false orientation as well as variable filling may reduce a tight seal and therefore hamper effective positive pressure ventilation (PPV). We aimed to measure the influence of mask type and mask position on the effectiveness of PPV. Twenty neonatal staff members delivered PPV to a modified, leak-free manikin. Resuscitation parameters were recorded using a self-inflatable bag PPV with an Intersurgical anatomical air cushion rim face mask (IS) and a size 0/1 Laerdal round face mask. Three different positions of the IS were tested: correct position, 90° and 180° rotation in reference to the midline of the face. IS masks in each correct position on the face but with different inflation of the air cushion (empty, 10, 20 and 30 mL). Mask leak was similar with mask rotation to either 90° or 180° but significantly increased from 27 (13-73) % with an adequate filled IS mask compared to 52 (16-83) % with an emptied air cushion rim. Anatomical-shaped face mask had similar mask leaks compared to round face mask. A wrongly positioned anatomical-shaped mask does not influence mask leak. Mask leak significantly increased once the air cushion rim was empty, which may cause failure in mask PPV.

Design decisions from the history of the EUVE science payload

Science.gov (United States)

Marchant, W.

1993-01-01

Some of the design issues that arose during the development of the EUVE science payload and solutions to the problems involved are examined. In particular, attention is given to the use of parallel and serial busses, the selection of the the ROM approach for software storage and execution, implementation of memory error detection and correction, and the selection of command structures. The early design decisions paid off in the timely delivery of the scientific payload and in the successful completion of the survey phase of the EUVE science mission.

The inner-relationship of hard X-ray and EUV bursts during solar flares

International Nuclear Information System (INIS)

Emslie, A.G.; Brown, J.C.; Donnelly, R.F.

1978-01-01

A comparison is made between the flux-versus-time profile in the EUV band and the thick target electron flux profile as inferred from hard X-rays for a number of moderately large solar flares. This complements Kane and Donnelly's (1971) study of small flares. The hard X-ray data are from ESRO TD-1A and the EUV inferred from SFD observations. Use of a chi 2 minimising method shows that the best overall fit between the profile fine structures obtains for synchronism to < approximately 5 s which is within the timing accuracy. This suggests that neither conduction nor convection is fast enough as the primary mechanism of energy transport into the EUV flare and rather favours heating by the electrons themselves or by some MHD wave process much faster than acoustic waves. The electron power deposited, for a thick target model, is however far greater than the EUV luminosity for any reasonable assumptions about the area and depth over which EUV is emitted. This means that either most of the power deposited is conducted away to the optical flare or that only a fraction < approximately 1-10% of the X-ray emitting electrons are injected downwards. Recent work on Hα flare heating strongly favours the latter alternative - i.e. that electrons are mostly confined in the corona. (Auth.)

EUV multilayer mirrors with enhanced stability

Science.gov (United States)

Benoit, Nicolas; Yulin, Sergiy; Feigl, Torsten; Kaiser, Norbert

2006-08-01

The application of multilayer optics in EUV lithography requires not only the highest possible normal-incidence reflectivity but also a long-term thermal and radiation stability at operating temperatures. This requirement is most important in the case of the collector mirror of the illumination system close to the EUV source where a short-time decrease in reflectivity is most likely. Mo/Si multilayer mirrors, designed for high normal reflectivity at the wavelength of 13.5 nm and deposited by dc magnetron sputtering, were directly exposed to EUV radiation without mitigation system. They presented a loss of reflectivity of more than 18% after only 8 hours of irradiation by a Xe-discharge source. Another problem of Mo/Si multilayers is the instability of reflectivity and peak wavelength under high heat load. It becomes especially critical at temperatures above 200°C, where interdiffusion between the molybdenum and the silicon layers is observed. The development of high-temperature multilayers was focused on two alternative Si-based systems: MoSi II/Si and interface engineered Mo/C/Si/C multilayer mirrors. The multilayer designs as well as the deposition parameters of all systems were optimized in terms of high peak reflectivity (>= 60 %) at a wavelength of 13.5 nm and high thermal stability. Small thermally induced changes of the MoSi II/Si multilayer properties were found but they were independent of the annealing time at all temperatures examined. A wavelength shift of -1.7% and a reflectivity drop of 1.0% have been found after annealing at 500°C for 100 hours. The total degradation of optical properties above 650°C can be explained by a recrystallization process of MoSi II layers.

Plasma sources for EUV lithography exposure tools

International Nuclear Information System (INIS)

Banine, Vadim; Moors, Roel

2004-01-01

The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13-14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components

Orthopedic treatment of Class III malocclusion with rapid maxillary expansion combined with a face mask: a cephalometric assessment of craniofacial growth patterns

Directory of Open Access Journals (Sweden)

Daniella Torres Tagawa

2012-06-01

Full Text Available OBJECTIVE: The aim of this prospective study was to assess potential changes in the cephalometric craniofacial growth pattern of 17 children presenting Angle Class III malocclusion treated with a Haas-type expander combined with a face mask. METHODS: Lateral cephalometric radiographs were taken at beginning (T1 and immediately after removal of the appliances (T2, average of 11 months of treatment. Linear and angular measurements were used to evaluate the cranial base, dentoskeletal changes and facial growth pattern. RESULTS: The length of the anterior cranial base experienced a reduction while the posterior cranial base assumed a more vertical position at T1. Some maxillary movement occurred, there was no rotation of the palatal plane, there was a slight clockwise rotation of the mandible, although not significant. The ANB angle increased, thereby improving the relationship between the jaws; dentoalveolar compensation was more evident in the lower incisors. Five out of 12 cases (29.41% showed the following changes: In one case the pattern became more horizontal and in four cases more vertical. CONCLUSIONS: It was concluded after a short-term assessment that treatment with rapid maxillary expansion (RME associated with a face mask was effective in the correction of Class III malocclusion despite the changes in facial growth pattern observed in a few cases.

Clay Mask Workshop

Science.gov (United States)

Gamble, David L.

2012-01-01

Masks can represent so many things, such as emotions (happy, sad, fearful) and power. The familiar "comedy and tragedy" masks, derived from ancient Greek theater, are just one example from mask history. Death masks from the ancient Egyptians influenced the ancient Romans into creating similar masks for their departed. Masks can represent many…

Dry etching technologies for the advanced binary film

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Mechanically and electrically robust metal-mask design for organic CMOS circuits

Science.gov (United States)

Shintani, Michihiro; Qin, Zhaoxing; Kuribara, Kazunori; Ogasahara, Yasuhiro; Hiromoto, Masayuki; Sato, Takashi

2018-04-01

The design of metal masks for fabricating organic CMOS circuits requires the consideration of not only the electrical property of the circuits, but also the mechanical strength of the masks. In this paper, we propose a new design flow for metal masks that realizes coanalysis of the mechanical and electrical properties and enables design exploration considering the trade-off between the two properties. As a case study, we apply a “stitching technique” to the mask design of a ring oscillator and explore the best design. With this technique, mask patterns are divided into separate parts using multiple mask layers to improve the mechanical strength at the cost of high resistance of the vias. By a numerical experiment, the design trade-off of the stitching technique is quantitatively analyzed, and it is demonstrated that the proposed flow is useful for the exploration of the designs of metal masks.

venice: Mask utility

Science.gov (United States)

Coupon, Jean

2018-02-01

venice reads a mask file (DS9 or fits type) and a catalogue of objects (ascii or fits type) to create a pixelized mask, find objects inside/outside a mask, or generate a random catalogue of objects inside/outside a mask. The program reads the mask file and checks if a point, giving its coordinates, is inside or outside the mask, i.e. inside or outside at least one polygon of the mask.

Lithographic measurement of EUV flare in the 0.3-NA Micro Exposure Tool optic at the Advanced Light Source

International Nuclear Information System (INIS)

Cain, Jason P.; Naulleau, Patrick; Spanos, Costas J.

2005-01-01

The level of flare present in a 0.3-NA EUV optic (the MET optic) at the Advanced Light Source at Lawrence Berkeley National Laboratory is measured using a lithographic method. Photoresist behavior at high exposure doses makes analysis difficult. Flare measurement analysis under scanning electron microscopy (SEM) and optical microscopy is compared, and optical microscopy is found to be a more reliable technique. In addition, the measured results are compared with predictions based on surface roughness measurement of the MET optical elements. When the fields in the exposure matrix are spaced far enough apart to avoid influence from surrounding fields and the data is corrected for imperfect mask contrast and aerial image proximity effects, the results match predicted values quite well. The amount of flare present in this optic ranges from 4.7% for 2 (micro)m features to 6.8% for 500 nm features

Accuracy and performance of 3D mask models in optical projection lithography

Science.gov (United States)

Agudelo, Viviana; Evanschitzky, Peter; Erdmann, Andreas; Fühner, Tim; Shao, Feng; Limmer, Steffen; Fey, Dietmar

2011-04-01

Different mask models have been compared: rigorous electromagnetic field (EMF) modeling, rigorous EMF modeling with decomposition techniques and the thin mask approach (Kirchhoff approach) to simulate optical diffraction from different mask patterns in projection systems for lithography. In addition, each rigorous model was tested for two different formulations for partially coherent imaging: The Hopkins assumption and rigorous simulation of mask diffraction orders for multiple illumination angles. The aim of this work is to closely approximate results of the rigorous EMF method by the thin mask model enhanced with pupil filtering techniques. The validity of this approach for different feature sizes, shapes and illumination conditions is investigated.

EUV source development for high-volume chip manufacturing tools

Science.gov (United States)

Stamm, Uwe; Yoshioka, Masaki; Kleinschmidt, Jürgen; Ziener, Christian; Schriever, Guido; Schürmann, Max C.; Hergenhan, Guido; Borisov, Vladimir M.

2007-03-01

Xenon-fueled gas discharge produced plasma (DPP) sources were integrated into Micro Exposure Tools already in 2004. Operation of these tools in a research environment gave early learning for the development of EUV sources for Alpha and Beta-Tools. Further experiments with these sources were performed for basic understanding on EUV source technology and limits, especially the achievable power and reliability. The intermediate focus power of Alpha-Tool sources under development is measured to values above 10 W. Debris mitigation schemes were successfully integrated into the sources leading to reasonable collector mirror lifetimes with target of 10 billion pulses due to the effective debris flux reduction. Source collector mirrors, which withstand the radiation and temperature load of Xenon-fueled sources, have been developed in cooperation with MediaLario Technologies to support intermediate focus power well above 10 W. To fulfill the requirements for High Volume chip Manufacturing (HVM) applications, a new concept for HVM EUV sources with higher efficiency has been developed at XTREME technologies. The discharge produced plasma (DPP) source concept combines the use of rotating disk electrodes (RDE) with laser exited droplet targets. The source concept is called laser assisted droplet RDE source. The fuel of these sources has been selected to be Tin. The conversion efficiency achieved with the laser assisted droplet RDE source is 2-3x higher compared to Xenon. Very high pulse energies well above 200 mJ / 2π sr have been measured with first prototypes of the laser assisted droplet RDE source. If it is possible to maintain these high pulse energies at higher repetition rates a 10 kHz EUV source could deliver 2000 W / 2π sr. According to the first experimental data the new concept is expected to be scalable to an intermediate focus power on the 300 W level.

Software-based data path for raster-scanned multi-beam mask lithography

Science.gov (United States)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales

Oxidation and metal contamination of EUV optics

NARCIS (Netherlands)

Sturm, Jacobus Marinus; Liu, Feng; Pachecka, Malgorzata; Lee, Christopher James; Bijkerk, Frederik

2013-01-01

The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) for printing smaller features on chips. One of the hallenges is to optimally control the contamination of the multilayer mirrors used in the imaging system. The aim of this project is generating fundamental understanding

Reconstruction of the solar EUV irradiance from 1996 to 2010 based on SOHO/EIT images

Directory of Open Access Journals (Sweden)

Haberreiter Margit

2014-01-01

Full Text Available The solar Extreme UltraViolet (EUV spectrum has important effects on the Earth’s upper atmosphere. For a detailed investigation of these effects it is important to have a consistent data series of the EUV spectral irradiance available. We present a reconstruction of the solar EUV irradiance based on SOHO/EIT images, along with synthetic spectra calculated using different coronal features which represent the brightness variation of the solar atmosphere. The EIT images are segmented with the SPoCA2 tool which separates the features based on a fixed brightness classification scheme. With the SOLMOD code we then calculate intensity spectra for the 10–100 nm wavelength range and each of the coronal features. Weighting the intensity spectra with the area covered by each of the features yields the temporal variation of the EUV spectrum. The reconstructed spectrum is then validated against the spectral irradiance as observed with SOHO/SEM. Our approach leads to good agreement between the reconstructed and the observed spectral irradiance. This study is an important step toward understanding variations in the solar EUV spectrum and ultimately its effect on the Earth’s upper atmosphere.

Electron beam mask writer EBM-9500 for logic 7nm node generation

Science.gov (United States)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

Rates of initial acceptance of PAP masks and outcomes of mask switching.

Science.gov (United States)

Bachour, Adel; Vitikainen, Pirjo; Maasilta, Paula

2016-05-01

Recently, we noticed a considerable development in alleviating problems related to positive airway pressure (PAP) masks. In this study, we report on the initial PAP mask acceptance rates and the effects of mask switching on mask-related symptoms. We prospectively collected all cases of mask switching in our sleep unit for a period of 14 months. At the time of the study, we used ResMed™ CPAP devices and masks. Mask switching was defined as replacing a mask used for at least 1 day with another type of mask. Changing to a different size but keeping the same type of mask did not count as mask switching. Switching outcomes were considered failed if the initial problem persisted or reappeared during the year that followed switching. Our patient pool was 2768. We recorded 343 cases of mask switching among 267 patients. Of the 566 patients who began new PAP therapy, 108 (39 women) had switched masks, yielding an initial mask acceptance rate of 81 %. The reason for switching was poor-fit/uncomfortable mask in 39 %, leak-related in 30 %, outdated model in 25 %, and nasal stuffiness in 6 % of cases; mask switching resolved these problems in 61 %. Mask switching occurred significantly (p = 0.037) more often in women and in new PAP users. The odds ratio for abandoning PAP therapy within 1 year after mask switching was 7.2 times higher (interval 4.7-11.1) than not switching masks. The initial PAP mask acceptance rate was high. Patients who switched their masks are at greater risk for abandoning PAP therapy.

Characterizing dusty argon-acetylene plasmas as a first step to understand dusty EUV environments

NARCIS (Netherlands)

Wetering, van de F.M.J.H.; Nijdam, S.; Kroesen, G.M.W.

2012-01-01

In extreme ultraviolet (EUV) lithography, ionic and particulate debris coming from the plasma source plays an important role. We started up a project looking at the principles of particle formation in plasmas and the interaction with EUV radiation. To this end, we study a low-pressure (10 Pa)

Coronal magnetic fields inferred from IR wavelength and comparison with EUV observations

Directory of Open Access Journals (Sweden)

Y. Liu

2009-07-01

Full Text Available Spectropolarimetry using IR wavelength of 1075 nm has been proved to be a powerful tool for directly mapping solar coronal magnetic fields including transverse component directions and line-of-sight component intensities. Solar tomography, or stereoscopy based on EUV observations, can supply 3-D information for some magnetic field lines in bright EUV loops. In a previous paper \\citep{liu08} the locations of the IR emission sources in the 3-D coordinate system were inferred from the comparison between the polarization data and the potential-field-source-surface (PFSS model, for one of five west limb regions in the corona (Lin et al., 2004. The paper shows that the region with the loop system in the active region over the photospheric area with strong magnetic field intensity is the region with a dominant contribution to the observed Stokes signals. So, the inversion of the measured Stokes parameters could be done assuming that most of the signals come from a relatively thin layer over the area with a large photospheric magnetic field strength. Here, the five limb coronal regions are studied together in order to study the spatial correlation between the bright EUV loop features and the inferred IR emission sources. It is found that, for the coronal regions above the stronger photospheric magnetic fields, the locations of the IR emission sources are closer to or more consistent with the bright EUV loop locations than those above weaker photospheric fields. This result suggests that the structures of the coronal magnetic fields observed at IR and EUV wavelengths may be different when weak magnetic fields present there.

Structural colour printing from a reusable generic nanosubstrate masked for the target image

International Nuclear Information System (INIS)

Rezaei, M; Jiang, H; Kaminska, B

2016-01-01

Structural colour printing has advantages over traditional pigment-based colour printing. However, the high fabrication cost has hindered its applications in printing large-area images because each image requires patterning structural pixels in nanoscale resolution. In this work, we present a novel strategy to print structural colour images from a pixelated substrate which is called a nanosubstrate. The nanosubstrate is fabricated only once using nanofabrication tools and can be reused for printing a large quantity of structural colour images. It contains closely packed arrays of nanostructures from which red, green, blue and infrared structural pixels can be imprinted. To print a target colour image, the nanosubstrate is first covered with a mask layer to block all the structural pixels. The mask layer is subsequently patterned according to the target colour image to make apertures of controllable sizes on top of the wanted primary colour pixels. The masked nanosubstrate is then used as a stamp to imprint the colour image onto a separate substrate surface using nanoimprint lithography. Different visual colours are achieved by properly mixing the red, green and blue primary colours into appropriate ratios controlled by the aperture sizes on the patterned mask layer. Such a strategy significantly reduces the cost and complexity of printing a structural colour image from lengthy nanoscale patterning into high throughput micro-patterning and makes it possible to apply structural colour printing in personalized security features and data storage. In this paper, nanocone array grating pixels were used as the structural pixels and the nanosubstrate contains structures to imprint the nanocone arrays. Laser lithography was implemented to pattern the mask layer with submicron resolution. The optical properties of the nanocone array gratings are studied in detail. Multiple printed structural colour images with embedded covert information are demonstrated. (paper)

Structural colour printing from a reusable generic nanosubstrate masked for the target image

Science.gov (United States)

Rezaei, M.; Jiang, H.; Kaminska, B.

2016-02-01

Structural colour printing has advantages over traditional pigment-based colour printing. However, the high fabrication cost has hindered its applications in printing large-area images because each image requires patterning structural pixels in nanoscale resolution. In this work, we present a novel strategy to print structural colour images from a pixelated substrate which is called a nanosubstrate. The nanosubstrate is fabricated only once using nanofabrication tools and can be reused for printing a large quantity of structural colour images. It contains closely packed arrays of nanostructures from which red, green, blue and infrared structural pixels can be imprinted. To print a target colour image, the nanosubstrate is first covered with a mask layer to block all the structural pixels. The mask layer is subsequently patterned according to the target colour image to make apertures of controllable sizes on top of the wanted primary colour pixels. The masked nanosubstrate is then used as a stamp to imprint the colour image onto a separate substrate surface using nanoimprint lithography. Different visual colours are achieved by properly mixing the red, green and blue primary colours into appropriate ratios controlled by the aperture sizes on the patterned mask layer. Such a strategy significantly reduces the cost and complexity of printing a structural colour image from lengthy nanoscale patterning into high throughput micro-patterning and makes it possible to apply structural colour printing in personalized security features and data storage. In this paper, nanocone array grating pixels were used as the structural pixels and the nanosubstrate contains structures to imprint the nanocone arrays. Laser lithography was implemented to pattern the mask layer with submicron resolution. The optical properties of the nanocone array gratings are studied in detail. Multiple printed structural colour images with embedded covert information are demonstrated.

High-radiance LDP source for mask inspection and beam line applications (Conference Presentation)

Science.gov (United States)

Teramoto, Yusuke; Santos, Bárbara; Mertens, Guido; Kops, Ralf; Kops, Margarete; von Wezyk, Alexander; Bergmann, Klaus; Yabuta, Hironobu; Nagano, Akihisa; Ashizawa, Noritaka; Taniguchi, Yuta; Yamatani, Daiki; Shirai, Takahiro; Kasama, Kunihiko

2017-04-01

High-throughput actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. One of the key technologies to realize such inspection tools is a high-radiance EUV source of which radiance is supposed to be as high as 100 W/mm2/sr. Ushio is developing laser-assisted discharge-produced plasma (LDP) sources. Ushio's LDP source is able to provide sufficient radiance as well as cleanliness, stability and reliability. Radiance behind the debris mitigation system was confirmed to be 120 W/mm2/sr at 9 kHz and peak radiance at the plasma was increased to over 200 W/mm2/sr in the recent development which supports high-throughput, high-precision mask inspection in the current and future technology nodes. One of the unique features of Ushio's LDP source is cleanliness. Cleanliness evaluation using both grazing-incidence Ru mirrors and normal-incidence Mo/Si mirrors showed no considerable damage to the mirrors other than smooth sputtering of the surface at the pace of a few nm per Gpulse. In order to prove the system reliability, several long-term tests were performed. Data recorded during the tests was analyzed to assess two-dimensional radiance stability. In addition, several operating parameters were monitored to figure out which contributes to the radiance stability. The latest model that features a large opening angle was recently developed so that the tool can utilize a large number of debris-free photons behind the debris shield. The model was designed both for beam line application and high-throughput mask inspection application. At the time of publication, the first product is supposed to be in use at the customer site.

Alternative method for variable aspect ratio vias using a vortex mask

Science.gov (United States)

Schepis, Anthony R.; Levinson, Zac; Burbine, Andrew; Smith, Bruce W.

2014-03-01

Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this

Considerations for pattern placement error correction toward 5nm node

Science.gov (United States)

Yaegashi, Hidetami; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Koike, Kyohei; Maslow, Mark John; Timoshkov, Vadim; Kiers, Ton; Di Lorenzo, Paolo; Fonseca, Carlos

2017-03-01

Multi-patterning has been adopted widely in high volume manufacturing as 193 immersion extension, and it becomes realistic solution of nano-order scaling. In fact, it must be key technology on single directional (1D) layout design [1] for logic devise and it becomes a major option for further scaling technique in SAQP. The requirement for patterning fidelity control is getting savior more and more, stochastic fluctuation as well as LER (Line edge roughness) has to be micro-scopic observation aria. In our previous work, such atomic order controllability was viable in complemented technique with etching and deposition [2]. Overlay issue form major potion in yield management, therefore, entire solution is needed keenly including alignment accuracy on scanner and detectability on overlay measurement instruments. As EPE (Edge placement error) was defined as the gap between design pattern and contouring of actual pattern edge, pattern registration in single process level must be considerable. The complementary patterning to fabricate 1D layout actually mitigates any process restrictions, however, multiple process step, symbolized as LELE with 193-i, is burden to yield management and affordability. Recent progress of EUV technology is remarkable, and it is major potential solution for such complicated technical issues. EUV has robust resolution limit and it must be definitely strong scaling driver for process simplification. On the other hand, its stochastic variation such like shot noise due to light source power must be resolved with any additional complemented technique. In this work, we examined the nano-order CD and profile control on EUV resist pattern and would introduce excellent accomplishments.

The monaural temporal window based on masking period pattern data in school-aged children and adults.

Science.gov (United States)

Buss, Emily; He, Shuman; Grose, John H; Hall, Joseph W

2013-03-01

Several lines of evidence indicate that auditory temporal resolution improves over childhood, whereas other data implicate the development of processing efficiency. The present study used the masking period pattern paradigm to examine the maturation of temporal processing in normal-hearing children (4.8 to 10.7 yrs) compared to adults. Thresholds for a brief tone were measured at 6 temporal positions relative to the period of a 5-Hz quasi-square-wave masker envelope, with a 20-dB modulation depth, as well as in 2 steady maskers. The signal was a pure tone at either 1000 or 6500 Hz, and the masker was a band of noise, either spectrally wide or narrow (21.3 and 1.4 equivalent rectangular bandwidths, respectively). Masker modulation improved thresholds more for wide than narrow bandwidths, and adults tended to receive more benefit from modulation than young children. Fits to data for the wide maskers indicated a change in window symmetry with development, reflecting relatively greater backward masking for the youngest listeners. Data for children >6.5 yrs of age appeared more adult-like for the 6500- than the 1000-Hz signal. Differences in temporal window asymmetry with listener age cannot be entirely explained as a consequence of a higher criterion for detection in children, a form of inefficiency.

The implementation of Mask-Ed: reflections of academic participants.

Science.gov (United States)

Reid-Searl, Kerry; Levett-Jones, Tracy; Cooper, Simon; Happell, Brenda

2014-09-01

This paper profiles the findings from a study that explored the perspectives and experiences of nurse educators who implemented a novel simulation approach termed Mask-Ed. The technique involves the educator wearing a silicone mask and or body parts and transforming into a character. The premise of this approach is that the masked educator has domain specific knowledge related to the simulation scenario and can transmit this to learners in a way that is engaging, realistic, spontaneous and humanistic. Nurse educators charged with the responsibility of implementing Mask-Ed in three universities were invited to participate in the study by attending an introductory workshop, implementing the technique and then journaling their experiences, insights and perspectives over a 12 month period. The journal entries were then thematically analysed. Key themes were categorised under the headings of Preparation, Implementation and Impact; Reflexivity and Responsiveness; Student Engagement and Ownership; and Teaching and Learning. Mask-Ed is a simulation approach which allows students to interact with the 'characters' in humanistic ways that promote person-centred care and therapeutic communication. This simulation approach holds previously untapped potential for a range of learning experiences, however, to be effective, adequate resourcing, training, preparation and practice is required. Copyright © 2014 Elsevier Ltd. All rights reserved.

Critical parameters influencing the EUV-induced damage of Ru-capped multilayer mirrors

International Nuclear Information System (INIS)

Hill, S B; Ermanoski, I; Tarrio, C; Lucatorto, T B; Madey, T E; Bajt, S; Fang, M; Chandhok, M

2007-01-01

Ongoing endurance testing of Ru-capped multilayer mirrors (MLMs) at the NIST synchrotron facility has revealed that the damage resulting from EUV irradiation does not always depend on the exposure conditions in an intuitive way. Previous exposures of Ru-capped MLMs to EUV radiation in the presence of water vapor demonstrated that the mirror damage rate actually decreases with increasing water pressure. We will present results of recent exposures showing that the reduction in damage for partial pressures of water up to 5 x 10 -6 Torr is not the result of a spatially uniform decrease in damage across the Gaussian intensity distribution of the incident EUV beam. Instead we observe a drop in the damage rate in the center of the exposure spot where the intensity is greatest, while the reflectivity loss in the wings of the intensity distribution appears to be independent of water partial pressure. (See Fig. 1.) We will discuss how the overall damage rate and spatial profile can be influenced by admixtures of carbon-containing species (e.g., CO, CO 2 , C 6 H 6 ) at partial pressures one-to-two orders of magnitude lower than the water vapor partial pressure. An investigation is underway to find the cause of the non-Gaussian damage profile. Preliminary results and hypotheses will be discussed. In addition to high-resolution reflectometry of the EUV-exposure sites, the results of surface analysis such as XPS will be presented. We will also discuss how the bandwidth and time structure of incident EUV radiation may affect the rate of reflectivity degradation. Although the observations presented here are based on exposures of Ru-capped MLMs, unless novel capping layers are similarly characterized, direct application of accelerated testing results could significantly overestimate mirror lifetime in the production environment

Comparison of face masks in the bag-mask ventilation of a manikin.

Science.gov (United States)

Redfern, D; Rassam, S; Stacey, M R; Mecklenburgh, J S

2006-02-01

We conducted a study investigating the effectiveness of four face mask designs in the bag-mask ventilation of a special manikin adapted to simulate a difficult airway. Forty-eight anaesthetists volunteered to bag-mask ventilate the manikin for 3 min with four different face masks. The primary outcome of the study was to calculate mean percentage leak from the face masks over 3 min. Anaesthetists were also asked to rate the face masks using a visual analogue score. The single-use scented intersurgical face mask had the lowest mean leak (20%). This was significantly lower than the mean leak from the single-use, cushioned 7,000 series Air Safety Ltd. face mask (24%) and the reusable silicone Laerdal face mask (27%) but not significantly lower than the mean leak from the reusable anatomical intersurgical face mask (23%). There was a large variation in both performance and satisfaction between anaesthetists with each design. This highlights the importance of having a variety of face masks available for emergency use.

The JWST/NIRCam Coronagraph: Mask Design and Fabrication

Science.gov (United States)

Krista, John E.; Balasubramanian, Kunjithapatha; Beichman, Charles A.; Echternach, Pierre M.; Green, Joseph J.; Liewer, Kurt M.; Muller, Richard E.; Serabyn, Eugene; Shaklan, Stuart B.; Trauger, John T.;

Use of molecular oxygen to reduce EUV-induced carbon contamination of optics

Science.gov (United States)

Malinowski, Michael E.; Grunow, Philip A.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.

2001-08-01

Carbon deposition and removal experiments on Mo/Si multilayer mirror (MLM) samples were performed using extreme ultraviolet (EUV) light on Beamline 12.0.1.2 of the Advanced Light Source, Lawrence Berkeley National Laboratory (LBNL). Carbon (C) was deposited onto Mo/Si multilayer mirror (MLM) samples when hydrocarbon vapors where intentionally introduced into the MLM test chamber in the presence of EUV at 13.44 nm (92.3eV). The carbon deposits so formed were removed by molecular oxygen + EUV. The MLM reflectivities and photoemission were measured in-situ during these carbon deposition and cleaning procedures. Auger Electron Spectroscopy (AES) sputter-through profiling of the samples was performed after experimental runs to help determine C layer thickness and the near-surface compositional-depth profiles of all samples studied. EUV powers were varied from ~0.2mW/mm2 to 3mW/mm2(at 13.44 nm) during both deposition and cleaning experiments and the oxygen pressure ranged from ~5x10-5 to 5x10-4 Torr during the cleaning experiments. C deposition rates as high as ~8nm/hr were observed, while cleaning rates as high as ~5nm/hr could be achieved when the highest oxygen pressure were used. A limited set of experiments involving intentional oxygen-only exposure of the MLM samples showed that slow oxidation of the MLM surface could occur.

Deposition, characterization, patterning and mechanistic study of inorganic resists for next-generation nanolithography

Science.gov (United States)

Luo, Feixiang

HafSOx films. Based on this experiment, we found that an insoluble Hf-O-Hf network is eventually formed after film exposure and development by the removal of SOx, OH, and H2O, and the cross-linking of HfxOy nanoparticles. Using photoemission and complementary Raman results, and knowing that both free and bound peroxide co-exist in the precursor solution, we confirmed that there is a specific peroxide stoichiometry needed in the film to chelate to Hf. Sulfate groups were found to act as the spacers between metal oxide nanoparticles to prevent early stage nanoparticle aggregation in the as-deposited films. Too much sulfate sacrifices resist sensitivity, while too little promotes undesired nanoparticle cross-linking during film preparation. In EUV lithography, low energy secondary electron activation had been suggested as a mechanism explaining how film exposure to EUV photons through a mask can result in a patterned film, but this hypothesis lacked experimental evidence. We constructed a low energy electron beam exposure system, exposed HafSOx resists with electrons with energy ranging from 2 eV to 100 eV, and then characterized the film changes after the exposure. Surprisingly, we found electrons with an energy as low as 2 eV can activate the film if given a sufficient electron dose. Electrons with a lower energy require higher doses to fully activate the resist. Our results strongly support the hypothesis that relatively low energy secondary electrons are central in the mechanism responsible for patterning, in this case by interacting with peroxyl species bound to Hf in the films. With the recent arrival of a state-of-art Zeiss-Orion helium ion beam microscope at Rutgers, we also tested the patterning performance of a HafSOx resist with 30 keV He+ ions. (HIBL = helium ion beam lithography). 30 keV He ions were found to be 50-100 more sensitive than 30 keV electrons at patterning HafSOx, and this boost was attributed to the higher stopping power of helium ions compared

Abnormal auditory forward masking pattern in the brainstem response of individuals with Asperger syndrome

Directory of Open Access Journals (Sweden)

Johan Källstrand

2010-05-01

Full Text Available Johan Källstrand1, Olle Olsson2, Sara Fristedt Nehlstedt1, Mia Ling Sköld1, Sören Nielzén21SensoDetect AB, Lund, Sweden; 2Department of Clinical Neuroscience, Section of Psychiatry, Lund University, Lund, SwedenAbstract: Abnormal auditory information processing has been reported in individuals with autism spectrum disorders (ASD. In the present study auditory processing was investigated by recording auditory brainstem responses (ABRs elicited by forward masking in adults diagnosed with Asperger syndrome (AS. Sixteen AS subjects were included in the forward masking experiment and compared to three control groups consisting of healthy individuals (n = 16, schizophrenic patients (n = 16 and attention deficit hyperactivity disorder patients (n = 16, respectively, of matching age and gender. The results showed that the AS subjects exhibited abnormally low activity in the early part of their ABRs that distinctly separated them from the three control groups. Specifically, wave III amplitudes were significantly lower in the AS group than for all the control groups in the forward masking condition (P < 0.005, which was not the case in the baseline condition. Thus, electrophysiological measurements of ABRs to complex sound stimuli (eg, forward masking may lead to a better understanding of the underlying neurophysiology of AS. Future studies may further point to specific ABR characteristics in AS individuals that separate them from individuals diagnosed with other neurodevelopmental diseases.Keywords: asperger syndrome, auditory brainstem response, forward masking, psychoacoustics

Masked priming for the comparative evaluation of camouflage conspicuity.

Science.gov (United States)

Brunyé, Tad T; Eddy, Marianna D; Cain, Matthew S; Hepfinger, Lisa B; Rock, Kathryn

2017-07-01

Human observer test and evaluation of camouflage patterns is critical for understanding relative pattern conspicuity against a range of background scenes. However, very few validated methodologies exist for this purpose, and those that do carry several limitations. Five experiments examined whether masked priming with a dot probe could be used to reliably differentiate camouflage patterns. In each experiment, participants were primed with a camouflaged target appearing on the left or right of the screen, and then made a speeded response to a dot probe appearing on the same (congruent) or different (incongruent) side. Across experiments we parametrically varied prime duration between 35, 42, 49, 56, and 63 ms. Results demonstrated that as prime duration increased, a response time disadvantage for incongruent trials emerged with certain camouflage patterns. Interestingly, the most conspicuous patterns showed behavioral differences at a relatively brief (49 ms) prime duration, whereas behavioral differences were only found at longer prime durations for less conspicuous patterns; this overall results pattern matched that predicted by a visual salience model. Together, we demonstrate the viability of masked priming for the test and evaluation of camouflage patterns, and correlated outcomes for saliency models and primed object processing. Published by Elsevier Ltd.

40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

NARCIS (Netherlands)

Luttge, R.; Adam, D.; Burkhardt, F.; Hoke, F.; Schacke, H.; Schmidt, M.; Wolf, H.; Schmidt, A.

1999-01-01

High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG

An optimized OPC and MDP flow for reducing mask write time and mask cost

Science.gov (United States)

Yang, Ellyn; Li, Cheng He; Park, Se Jin; Zhu, Yu; Guo, Eric

2010-09-01

In the process of optical proximity correction, layout edge or fragment is migrating to proper position in order to minimize edge placement error (EPE). During this fragment migration, several factors other than EPE can be also taken into account as a part of cost function for optimal fragment displacement. Several factors are devised in favor of OPC stability, which can accommodate room for high mask error enhancement factor (MEEF), lack of process window, catastrophic pattern failure such as pinch/bridge and improper fragmentation. As technology node becomes finer, there happens conflict between OPC accuracy and stability. Especially for metal layers, OPC has focused on the stability by loss of accurate OPC results. On this purpose, several techniques have been introduced, which are target smoothing, process window aware OPC, model-based retargeting and adaptive OPC. By utilizing those techniques, OPC enables more stabilized patterning, instead of realizing design target exactly on wafer. Inevitably, post-OPC layouts become more complicated because those techniques invoke additional edge, or fragments prior to correction or during OPC iteration. As a result, jogs of post OPC layer can be dramatically increased, which results in huge number of shot count after data fracturing. In other words, there is trade-off relationship between data complexity and various methods for OPC stability. In this paper, those relationships have been investigated with respect to several technology nodes. The mask shot count reduction is achieved by reducing the number of jogs with which EPE difference are within pre-specified value. The effect of jog smoothing on OPC output - in view of OPC performance and mask data preparation - was studied quantitatively for respective technology nodes.

Estimation and control of large-scale systems with an application to adaptive optics for EUV lithography

NARCIS (Netherlands)

Haber, A.

2014-01-01

Extreme UltraViolet (EUV) lithography is a new technology for production of integrated circuits. In EUV lithographic machines, optical elements are heated by absorption of exposure energy. Heating induces thermoelastic deformations of optical elements and consequently, it creates wavefront

Visual masking & schizophrenia

Directory of Open Access Journals (Sweden)

Michael H. Herzog

2015-06-01

Full Text Available Visual masking is a frequently used tool in schizophrenia research. Visual masking has a very high sensitivity and specificity and masking paradigms have been proven to be endophenotypes. Whereas masking is a powerful technique to study schizophrenia, the underlying mechanisms are discussed controversially. For example, for more than 25 years, masking deficits of schizophrenia patients were mainly attributed to a deficient magno-cellular system (M-system. Here, we show that there is very little evidence that masking deficits are magno-cellular deficits. We will discuss the magno-cellular and other approaches in detail and highlight their pros and cons.

Nanosphere Lithography of Chitin and Chitosan with Colloidal and Self-Masking Patterning

Directory of Open Access Journals (Sweden)

Rakkiyappan Chandran

2018-02-01

Full Text Available Complex surface topographies control, define, and determine the properties of insect cuticles. In some cases, these nanostructured materials are a direct extension of chitin-based cuticles. The cellular mechanisms that generate these elaborate chitin-based structures are unknown, and involve complicated cellular and biochemical “bottom-up” processes. We demonstrated that a synthetic “top-down” fabrication technique—nanosphere lithography—generates surfaces of chitin or chitosan that mimic the arrangement of nanostructures found on the surface of certain insect wings and eyes. Chitin and chitosan are flexible and biocompatible abundant natural polymers, and are a sustainable resource. The fabrication of nanostructured chitin and chitosan materials enables the development of new biopolymer materials. Finally, we demonstrated that another property of chitin and chitosan—the ability to self-assemble nanosilver particles—enables a novel and powerful new tool for the nanosphere lithographic method: the ability to generate a self-masking thin film. The scalability of the nanosphere lithographic technique is a major limitation; however, the silver nanoparticle self-masking enables a one-step thin-film cast or masking process, which can be used to generate nanostructured surfaces over a wide range of surfaces and areas.

Performance of one hundred watt HVM LPP-EUV source

Science.gov (United States)

Mizoguchi, Hakaru; Nakarai, Hiroaki; Abe, Tamotsu; Nowak, Krzysztof M.; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Hori, Tsukasa; Kodama, Takeshi; Shiraishi, Yutaka; Yanagida, Tatsuya; Soumagne, Georg; Yamada, Tsuyoshi; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi

2015-03-01

We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as: combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting, and mitigation with magnetic field, have been developed in Gigaphoton Inc. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. Based on these data we are developing first practical source for HVM - "GL200E". This data means 250W EUV power will be able to realize around 20kW level pulsed CO2 laser. We have reported engineering data from our recent test such around 43W average clean power, CE=2.0%, with 100kHz operation and other data 19). We have already finished preparation of higher average power CO2 laser more than 20kW at output power cooperate with Mitsubishi Electric Corporation 14). Recently we achieved 92W with 50kHz, 50% duty cycle operation 20). We have reported component technology progress of EUV light source system. We report promising experimental data and result of simulation of magnetic mitigation system in Proto #1 system. We demonstrated several data with Proto #2 system: (1) emission data of 140W in burst under 70kHz 50% duty cycle during 10 minutes. (2) emission data of 118W in burst under 60kHz 70% duty cycle during 10 minutes. (3) emission data of 42W in burst under 20kHz 50% duty cycle (10000pls/0.5ms OFF) during 3 hours (110Mpls). Also we report construction of Pilot #1 system. Final target is week level operation with 250W EUV power with CE=4%, more than 27kW CO2 laser power by the end of Q2 of 2015.

EUV lithographic radiation grafting of thermo-responsive hydrogel nanostructures

International Nuclear Information System (INIS)

Farquet, Patrick; Padeste, Celestino; Solak, Harun H.; Guersel, Selmiye Alkan; Scherer, Guenther G.; Wokaun, Alexander

2007-01-01

Nanostructures of the thermoresponsive poly(N-isopropyl acrylamide) (PNIPAAm) and of PNIPAAm-block-poly(acrylic acid) copolymers were produced on poly(tetrafluoroethylene-co-ethyelene) (ETFE) films using extreme ultraviolet (EUV) lithographic exposure with subsequent graft-polymerization. The phase transition of PNIPAAm nanostructures at the low critical solution temperature (LCST) at 32 deg. C was imaged by atomic force microscopy (AFM) phase contrast measurements in pure water. Results show a higher phase contrast for samples measured below the LCST temperature than for samples above the LCST, proving that the soft PNIPAAm hydrogel transforms into a much more compact conformation above the LCST. EUV lithographic exposures were combined with the reversible addition-fragment chain transfer (RAFT)-mediated polymerization using cyanoisopropyl dithiobenzoate (CPDB) as chain transfer agent to synthesize PNIPAAm block-copolymer nanostructures

X-ray masks

International Nuclear Information System (INIS)

Greenwood, J.C.; Satchell, D.W.

1984-01-01

In semiconductor manufacture, where X-ray irradiation is used, a thin silicon membrane can be used as an X-ray mask. This membrane has areas on which are patterns to define the regions to be irradiated. These regions are of antireflection material. With the thin, in the order of 3 microns, membranes used, fragility is a problem. Hence a number of ribs of silicon are formed integral with the membrane, and which are relatively thick, 5 to 10 microns. The ribs may be formed by localised deeper boron deposition followed by a selective etch. (author)

Review on the solar spectral variability in the EUV for space weather purposes

Directory of Open Access Journals (Sweden)

J. Lilensten

2008-02-01

Full Text Available The solar XUV-EUV flux is the main energy source in the terrestrial diurnal thermosphere: it produces ionization, dissociation, excitation and heating. Accurate knowledge of this flux is of prime importance for space weather. We first list the space weather applications that require nowcasting and forecasting of the solar XUV-EUV flux. We then review present models and discuss how they account for the variability of the solar spectrum. We show why the measurement of the full spectrum is difficult, and why it is illusory to retrieve it from its atmospheric effects. We then address the problem of determining a set of observations that are adapted for space weather purposes, in the frame of ionospheric studies. Finally, we review the existing and future space experiments that are devoted to the observation of the solar XUV-EUV spectrum.

Nasal mask ventilation is better than face mask ventilation in edentulous patients.

Science.gov (United States)

Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

2016-01-01

Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients.

INTERACTION OF LASER RADIATION WITH MATTER. LASER PLASMA High-power EUV (13.5 nm) light source

Science.gov (United States)

Borisov, Vladimir M.; Borisova, Galina N.; Vinokhodov, Aleksandr Yu; Zakharov, S. V.; Ivanov, Aleksandr S.; Kiryukhin, Yurii B.; Mishchenko, Valentin A.; Prokof'ev, Aleksandr V.; Khristoforov, Oleg B.

2010-10-01

Characteristics of a discharge-produced plasma (DPP) light source in the spectral band 13.5±0.135 nm, developed for Extreme Ultra Violet (EUV) lithography, are presented. EUV light is generated by DPP in tin vapour formed between rotating disk electrodes. The discharge is ignited by a focused laser beam. The EUV power 1000 W/(2π sr) in the spectral band 13.5±0.135 nm was achieved with input power about of ~63 kW to the plasma at a pulse repetition rate ~7 kHz . The results of numerical simulation are compared with the experimental data.

Green binary and phase shifting mask

Science.gov (United States)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing

Science.gov (United States)

Ashe, Brian; Deverich, Christina; Rabidoux, Paul A.; Peck, Barbara; Petrillo, Karen E.; Angelopoulos, Marie; Huang, Wu-Song; Moreau, Wayne M.; Medeiros, David R.

2002-03-01

The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch process to produce patterns in chrome. ZEP was employed for dry etch processing to meet the requirements of shrinking dimensions, optical proximity corrections and phase shift masks. However, ZEP offers low contrast, marginal etch resistance, organic solvent development, and concerns regarding resist heating with its high dose requirements1. Chemically Amplified Resist (CAR) systems are a very good choice for dimensions less than 180nm because of their high sensitivity and contrast, high resolution, dry etch resistance, aqueous development, and process latitude2. KRS-XE was developed as a high contrast CA resist based on ketal protecting groups that eliminate the need for post exposure bake (PEB). This resist can be used for a variety of electron beam exposures, and improves the capability to fabricate masks for devices smaller than 180nm. Many factors influence the performance of resists in mask making such as post apply bake, exposure dose, resist develop, and post exposure bake. These items will be discussed as well as the use of reactive ion etching (RIE) selectivity and pattern transfer.

Binaural masking level differences in nonsimultanuous masking

NARCIS (Netherlands)

Kohlrausch, A.G.; Fassel, R.; Gilkey, R.H.; Anderson, T.R.

1997-01-01

This chapter investigates the extent to which binaural unmasking occurs with nonsimultaneous presentation of masker and signal, particularly in forward masking. The majority of previous studies that addressed this question found that there is a substantial binaural masking level difference (BMLD) in

"The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

Science.gov (United States)

Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

2015-01-01

Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

Equipment to fabricate a masking layer on a carrier by means of soft X-ray

International Nuclear Information System (INIS)

Smith, H.I.; Spears, D.L.; Stern, E.

1978-01-01

The equipment is to improve the pattern multiplication technique for producing e.g. microminiature current rings. It uses soft X-radiation (2 to 20 A) from an Al anticathode. The mask consists of a Si layer penetrable by X-rays and an opaque pattern layer of Au to limit the mask pattern. Polymethyl metacrylate is suitable as sensitive layer for X-radiation, which is coated on a carrier. The sensitive layer can be prepared from methyl isobutyl ketone and isopropyl alcohol. (ORU/ORU) [de

Inter- and intra-observer reliability of masking in plantar pressure measurement analysis.

Science.gov (United States)

Deschamps, K; Birch, I; Mc Innes, J; Desloovere, K; Matricali, G A

2009-10-01

Plantar pressure measurement is an important tool in gait analysis. Manual placement of small masks (masking) is increasingly used to calculate plantar pressure characteristics. Little is known concerning the reliability of manual masking. The aim of this study was to determine the reliability of masking on 2D plantar pressure footprints, in a population with forefoot deformity (i.e. hallux valgus). Using a random repeated-measure design, four observers identified the third metatarsal head on a peak-pressure barefoot footprint, using a small mask. Subsequently, the location of all five metatarsal heads was identified, using the same size of masks and the same protocol. The 2D positional variation of the masks and the peak pressure (PP) and pressure time integral (PTI) values of each mask were calculated. For single-masking the lowest inter-observer reliability was found for the distal-proximal direction, causing a clear, adverse impact on the reliability of the pressure characteristics (PP and PTI). In the medial-lateral direction the inter-observer reliability could be scored as high. Intra-observer reliability was better and could be scored as high or good for both directions, with a correlated improved reliability of the pressure characteristics. Reliability of multi-masking showed a similar pattern, but overall values tended to be lower. Therefore, small sized masking in order to define pressure characteristics in the forefoot should be done with care.

Latest developments on EUV reticle and pellicle research and technology at TNO

Science.gov (United States)

Verberk, Rogier; Koster, Norbert; te Sligte, Edwin; Staring, Wilbert

2017-06-01

At TNO an extensive EUV optics life time program has been running for over 15 years together with our partners ASML and Carl Zeiss. This has contributed to the upcoming introduction of EUV High Volume Manufacturing (HVM). To further help the industry with the introduction of EUV, TNO has worked on extending their facilities with a number of reticle and pellicle research infrastructure facilities. In this paper we will show some of the facilities that are available at TNO and shortly introduce their capabilities. Recently we have opened our EBL2 facility, which is an EUV Beam Line (EBL2) meant for studying the effects of high power EUV illumination on optics, reticles and pellicles up to the power roadmap of 500 W at intermediate Focus (IF). This facility is open to users from all over the world and is beneficial for the industry in helping developing alternative capping layers and contamination control strategies for optics lifetime, new absorber materials, pellicles and resists. The EBL2 system has seen first light in December 2016 and is now in the final stage of acceptance testing and qualification. It is expected that the system will be fully operational in the third quarter of 2017, and available for users. It is possible to transfer reticles to and from the EBL2 by means of the reticle handler using the dual pod interface. This secures backside cleanliness to NXE standards and thus enables wafer printing on a NXE tool in a later stage after the exposures and inspection at EBL2. Besides EBL2, a high performance and ultra-clean reticle handler is available at TNO. This handler incorporates our particle scanner Rapid Nano 4 for front side inspection of reticle blanks with a detection limit down to 20 nm particles. Attached to the handler is also an Optical Coherence Tomography (OCT) inspection tool for back-side reticle or pellicle inspection with a resolution down to 1 micron.

Performance improvement of two-dimensional EUV spectroscopy based on high frame rate CCD and signal normalization method

International Nuclear Information System (INIS)

Zhang, H.M.; Morita, S.; Ohishi, T.; Goto, M.; Huang, X.L.

2014-01-01

In the Large Helical Device (LHD), the performance of two-dimensional (2-D) extreme ultraviolet (EUV) spectroscopy with wavelength range of 30-650A has been improved by installing a high frame rate CCD and applying a signal intensity normalization method. With upgraded 2-D space-resolved EUV spectrometer, measurement of 2-D impurity emission profiles with high horizontal resolution is possible in high-density NBI discharges. The variation in intensities of EUV emission among a few discharges is significantly reduced by normalizing the signal to the spectral intensity from EUV_—Long spectrometer which works as an impurity monitor with high-time resolution. As a result, high resolution 2-D intensity distribution has been obtained from CIV (384.176A), CV(2x40.27A), CVI(2x33.73A) and HeII(303.78A). (author)

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Time Variabilities of Solar Wind Ion Fluxes and of X-ray and EUV Emissions from Comet Hyakutake

Science.gov (United States)

Neugebauer, M.; Cravens, T.; Lisse, C.; Ipavich, F.; von Steiger, R.; Shah, P.; Armstrong, T.

1999-01-01

Observations of X-ray and extreme ultraviolet (EUV) emissions from comet C/Hyakutake 1996 B2 made by the Rontgen X-ray satellite (ROSAT) and the Extreme Ultraviolet Explorer (EUVE) revealed a total X-ray luminosity of about 500 MW.

Measurements of monopolar and bipolar current spreads using forward-masking with a fixed probe.

Science.gov (United States)

Bingabr, Mohamed G; Espinoza-Varas, Blas; Sigdel, Saroj

2014-05-01

This research employed a forward-masking paradigm to estimate the current spread of monopolar (MP) and bipolar (BP) maskers, with current amplitudes adjusted to elicit the same loudness. Since the spatial separation between active and return electrodes is smaller in BP than in MP configurations, the BP current spread is more localized and presumably superior in terms of speech intelligibility. Because matching the loudness requires higher current in BP than in MP stimulation, previous forward-masking studies show that BP current spread is not consistently narrower across subjects or electrodes within a subject. The present forward-masking measures of current spread differ from those of previous studies by using the same BP probe electrode configuration for both MP and BP masker configurations, and adjusting the current levels of the MP and BP maskers so as to match them in loudness. With this method, the estimate of masker current spread would not be contaminated by differences in probe current spread. Forward masking was studied in four cochlear implant patients, two females and two males, with speech recognition scores higher than 50%; that is, their auditory-nerve survival status was more than adequate to carry out the experiments. The data showed that MP and BP masker configurations produce equivalent masking patterns (and current spreads) in three participants. A fourth participant displayed asymmetrical patterns with enhancement rather than masking in some cases, especially when the probe and masker were at the same location. This study showed equivalent masking patterns for MP and BP maskers when the BP masker current amplitude was increased to match the loudness of the MP masker, and the same BP probe configuration is used with both maskers. This finding could help to explain why cochlear implant users often fail to accrue higher speech intelligibility benefit from BP stimulation.

Diagnostic system for EUV radiation measurements from dense xenon plasma generated by MPC

International Nuclear Information System (INIS)

Petrov, Yu.V.; Garkusha, I.E.; Solyakov, D.G.; Marchenko, A.K.; Chebotarev, V.V.; Ladygina, M.S.; Staltsov, V.V.; Yelisyeyev, D.V.; Hassanein, A.

2011-01-01

Magnetoplasma compressor (MPC) of compact geometry has been designed and tested as a source of EUV radiation. In present paper diagnostic system for registration of EUV radiation is described. It was applied for radiation measurements in different operation modes of MPC. The registration system was designed on the base of combination of different types of AXUV photodiodes. Possibility to minimize the influence of electrons and ions flows from dense plasma stream on AXUV detector performance and results of the measurements has been discussed.

EUV multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror

NARCIS (Netherlands)

Huang, Qiushi; Louis, Eric; Bijkerk, Frederik; de Boer, Meint J.; von Blanckenhagen, G.

2016-01-01

A multilayer mirror (M) reflecting extreme ultraviolet (EUV) radiation from a first wave-length range in a EUV spectral region comprises a substrate (SUB) and a stack of layers (SL) on the substrate, the stack of layers comprising layers comprising a low index material and a high index material, the

Uncertainties in (E)UV model atmosphere fluxes

Science.gov (United States)

Rauch, T.

2008-04-01

Context: During the comparison of synthetic spectra calculated with two NLTE model atmosphere codes, namely TMAP and TLUSTY, we encounter systematic differences in the EUV fluxes due to the treatment of level dissolution by pressure ionization. Aims: In the case of Sirius B, we demonstrate an uncertainty in modeling the EUV flux reliably in order to challenge theoreticians to improve the theory of level dissolution. Methods: We calculated synthetic spectra for hot, compact stars using state-of-the-art NLTE model-atmosphere techniques. Results: Systematic differences may occur due to a code-specific cutoff frequency of the H I Lyman bound-free opacity. This is the case for TMAP and TLUSTY. Both codes predict the same flux level at wavelengths lower than about 1500 Å for stars with effective temperatures (T_eff) below about 30 000 K only, if the same cutoff frequency is chosen. Conclusions: The theory of level dissolution in high-density plasmas, which is available for hydrogen only should be generalized to all species. Especially, the cutoff frequencies for the bound-free opacities should be defined in order to make predictions of UV fluxes more reliable.

Negating HIO-induced metal and carbide EUV surface contamination

NARCIS (Netherlands)

Sturm, Jacobus Marinus; Gleeson, Michael; van de Kruijs, Robbert Wilhelmus Elisabeth; Lee, Christopher James; Kleyn, A.W.; Bijkerk, Frederik

2011-01-01

The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.

Design specific joint optimization of masks and sources on a very large scale

Science.gov (United States)

Lai, K.; Gabrani, M.; Demaris, D.; Casati, N.; Torres, A.; Sarkar, S.; Strenski, P.; Bagheri, S.; Scarpazza, D.; Rosenbluth, A. E.; Melville, D. O.; Wächter, A.; Lee, J.; Austel, V.; Szeto-Millstone, M.; Tian, K.; Barahona, F.; Inoue, T.; Sakamoto, M.

2011-04-01

Joint optimization (JO) of source and mask together is known to produce better SMO solutions than sequential optimization of the source and the mask. However, large scale JO problems are very difficult to solve because the global impact of the source variables causes an enormous number of mask variables to be coupled together. This work presents innovation that minimize this runtime bottleneck. The proposed SMO parallelization algorithm allows separate mask regions to be processed efficiently across multiple CPUs in a high performance computing (HPC) environment, despite the fact that a truly joint optimization is being carried out with source variables that interact across the entire mask. Building on this engine a progressive deletion (PD) method was developed that can directly compute "binding constructs" for the optimization, i.e. our method can essentially determine the particular feature content which limits the process window attainable by the optimum source. This method allows us to minimize the uncertainty inherent to different clustering/ranking methods in seeking an overall optimum source that results from the use of heuristic metrics. An objective benchmarking of the effectiveness of different pattern sampling methods was performed during postoptimization analysis. The PD serves as a golden standard for us to develop optimum pattern clustering/ranking algorithms. With this work, it is shown that it is not necessary to exhaustively optimize the entire mask together with the source in order to identify these binding clips. If the number of clips to be optimized exceeds the practical limit of the parallel SMO engine one can starts with a pattern selection step to achieve high clip count compression before SMO. With this LSSO capability one can address the challenging problem of layout-specific design, or improve the technology source as cell layouts and sample layouts replace lithography test structures in the development cycle.

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

Science.gov (United States)

Manouras, Theodoros; Kazazis, Dimitrios; Koufakis, Eleftherios; Ekinci, Yasin; Vamvakaki, Maria; Argitis, Panagiotis

2018-03-01

The main target of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, the main chain of which is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used nonchemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and non- satisfactory process reliability are the usual problems encountered in acid catalysed materials based on main chain scission. In our material design the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high resolution patterning and overall processing characteristics that make them strong candidates for industrial use upon further optimization.

Microwave, EUV, and X-ray observations of active region loops and filaments

International Nuclear Information System (INIS)

Schmahl, E.

1980-01-01

Until the advent of X-ray and EUV observations of coronal structures, radio observers were forced to rely on eclipse and coronagraph observations in white light and forbidden coronal lines for additional diagnostics of the high temperature microwave sources. While these data provided enough material for theoretical insight into the physics of active regions, there was no way to make direct, simultaneous comparison of coronal structures on the disk as seen at microwave and optical wavelengths. This is now possible, and therefore the author summarizes the EUV and X-ray observations indicating at each point the relevance to microwaves. (Auth.)

Competing for Consciousness: Prolonged Mask Exposure Reduces Object Substitution Masking

Science.gov (United States)

Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

2011-01-01

In object substitution masking (OSM) a sparse, temporally trailing 4-dot mask impairs target identification, even though it has different contours from, and does not spatially overlap with the target. Here, we demonstrate a previously unknown characteristic of OSM: Observers show reduced masking at prolonged (e.g., 640 ms) relative to intermediate…

Masking and Partial Masking in Listeners with a High-Frequency Hearing Loss

NARCIS (Netherlands)

Smits, J.T.S.; Duifhuis, H.

1982-01-01

3 listeners with sensorineural hearing loss ranging from moderate to moderate-severe starting at frequencies higher than 1 kHz participated in two masking experiments and a partial masking experiment. In the first masking experiment, fM = 1 kHz and LM = 50 dB SPL, higher than normal masked

AUTOMATIC LUNG NODULE SEGMENTATION USING AUTOSEED REGION GROWING WITH MORPHOLOGICAL MASKING (ARGMM AND FEATURE EX-TRACTION THROUGH COMPLETE LOCAL BINARY PATTERN AND MICROSCOPIC INFORMATION PATTERN

Directory of Open Access Journals (Sweden)

Senthil Kumar

2015-04-01

Full Text Available An efficient Autoseed Region Growing with Morphological Masking(ARGMM is imple-mented in this paper on the Lung CT Slice to segment the 'Lung Nodules',which may be the potential indicator for the Lung Cancer. The segmentation of lung nodules car-ried out in this paper through Multi-Thresholding, ARGMM and Level Set Evolution. ARGMM takes twice the time compared to Level Set, but still the number of suspected segmented nodules are doubled, which make sure that no potential cancerous nodules go unnoticed at the earlier stages of diagnosis. It is very important not to panic the patient by finding the presence of nodules from Lung CT scan. Only 40 percent of nod-ules can be cancerous. Hence, in this paper an efficient Shape and Texture analysis is computed to quantitatively describe the segmented lung nodules. The Frequency spectrum of the lung nodules is developed and its frequency domain features are com-puted. The Complete Local binary pattern of lung nodules is computed in this paper by constructing the combine histogram of Sign and Magnitude Local Binary Patterns. Lo-cal Configuration Pattern is also determined in this work for lung nodules to numeri-cally model the microscopic information of nodules pattern.

Vitreous carbon mask substrate for X-ray lithography

Science.gov (United States)

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Comparing Response Times and Error Rates in a Simultaneous Masking Paradigm

Directory of Open Access Journals (Sweden)

F Hermens

2014-08-01

Full Text Available In simultaneous masking, performance on a foveally presented target is impaired by one or more flanking elements. Previous studies have demonstrated strong effects of the grouping of the target and the flankers on the strength of masking (e.g., Malania, Herzog & Westheimer, 2007. These studies have predominantly examined performance by measuring offset discrimination thresholds as a measure of performance, and it is therefore unclear whether other measures of performance provide similar outcomes. A recent study, which examined the role of grouping on error rates and response times in a speeded vernier offset discrimination task, similar to that used by Malania et al. (2007, suggested a possible dissociation between the two measures, with error rates mimicking threshold performance, but response times showing differential results (Panis & Hermens, 2014. We here report the outcomes of three experiments examining this possible dissociation, and demonstrate an overall similar pattern of results for error rates and response times across a broad range of mask layouts. Moreover, the pattern of results in our experiments strongly correlates with threshold performance reported earlier (Malania et al., 2007. Our results suggest that outcomes in a simultaneous masking paradigm do not critically depend on the outcome measure used, and therefore provide evidence for a common underlying mechanism.

Akathisia masked by hypokinesia.

Science.gov (United States)

Tuisku, K; Lauerma, H; Holi, M M; Honkonen, T; Rimon, R

2000-07-01

Here, we will discuss the concept of subjective akathisia and present a patient case. Our patient was suffering from neuroleptic-induced hypokinesia and akathisia at the same time. The typical motor manifestations of akathisia were masked by hypokinesia, which made the diagnosis difficult. However, the subjective symptoms of akathisia were evident and distressing. Although not observable to bare eye, the pathognomonic pattern of motor activity detected in akathisia was demonstrated by actometric recording. Changing the conventional neuroleptic to an atypical one brought relief to the subjective symptoms of akathisia and hypokinesia, while the motor activity was clearly diminished in actometric recording. Actometric recording may be useful in diagnosing akathisia masked by hypokinesia, but the typical subjective symptoms of akathisia should not be ignored, even when actometry is not available to demonstrate the missing motor component of akathisia. Not only akathisia defined by DSM-IV but also subjective akathisia should be adequately treated to relieve the subjective distress, and to diminish the unfavorable effects on psychotic symptoms, behavior, and drug compliance.

2013 mask industry survey

Science.gov (United States)

Malloy, Matt

2013-09-01

A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

Effects of hard mask etch on final topography of advanced phase shift masks

Science.gov (United States)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

A preliminary estimate of the EUVE cumulative distribution of exposure time on the unit sphere. [Extreme Ultra-Violet Explorer

Science.gov (United States)

Tang, C. C. H.

1984-01-01

A preliminary study of an all-sky coverage of the EUVE mission is given. Algorithms are provided to compute the exposure of the celestial sphere under the spinning telescopes, taking into account that during part of the exposure time the telescopes are blocked by the earth. The algorithms are used to give an estimate of exposure time at different ecliptic latitudes as a function of the angle of field of view of the telescope. Sample coverage patterns are also given for a 6-month mission.

Emission spectra of photoionized plasmas induced by intense EUV pulses: Experimental and theoretical investigations

Science.gov (United States)

Saber, Ismail; Bartnik, Andrzej; Skrzeczanowski, Wojciech; Wachulak, Przemysław; Jarocki, Roman; Fiedorowicz, Henryk

2017-03-01

Experimental measurements and numerical modeling of emission spectra in photoionized plasma in the ultraviolet and visible light (UV/Vis) range for noble gases have been investigated. The photoionized plasmas were created using laser-produced plasma (LPP) extreme ultraviolet (EUV) source. The source was based on a gas puff target; irradiated with 10ns/10J/10Hz Nd:YAG laser. The EUV radiation pulses were collected and focused using grazing incidence multifoil EUV collector. The laser pulses were focused on a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of gases resulted in a formation of low temperature photoionized plasmas emitting radiation in the UV/Vis spectral range. Atomic photoionized plasmas produced this way consisted of atomic and ionic with various ionization states. The most dominated observed spectral lines originated from radiative transitions in singly charged ions. To assist in a theoretical interpretation of the measured spectra, an atomic code based on Cowan's programs and a collisional-radiative PrismSPECT code have been used to calculate the theoretical spectra. A comparison of the calculated spectral lines with experimentally obtained results is presented. Electron temperature in plasma is estimated using the Boltzmann plot method, by an assumption that a local thermodynamic equilibrium (LTE) condition in the plasma is validated in the first few ionization states. A brief discussion for the measured and computed spectra is given.

Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

International Nuclear Information System (INIS)

Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran; BongChul, Kang; HyunChul, Kim

2015-01-01

Highlights: • A new patterning method for ITO thin film is introduced. • Gold thin film is important in decrease spikes formed in ITO patterning process. • The laser pulse width occupies a significant effect the patterning surface quality. • Etching process is the effective method to remove the spikes at rims of pattern. • A considerable improvement over patterning quality is obtained by proposed method. - Abstract: In this paper, an indium–tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass–ITO–gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated

Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

Energy Technology Data Exchange (ETDEWEB)

Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran [High Safety Vehicle Core Technology Research Center, Department of Mechanical & Automotive Engineering, Inje University, Gimhae (Korea, Republic of); BongChul, Kang, E-mail: kbc@kumoh.ac.kr [Department of Inteligent Mechanical Engineering, Kumoh National Institute of Technology, Gumi (Korea, Republic of); HyunChul, Kim, E-mail: mechkhc@inje.ac.kr [High Safety Vehicle Core Technology Research Center, Department of Mechanical & Automotive Engineering, Inje University, Gimhae (Korea, Republic of)

2015-05-01

Highlights: • A new patterning method for ITO thin film is introduced. • Gold thin film is important in decrease spikes formed in ITO patterning process. • The laser pulse width occupies a significant effect the patterning surface quality. • Etching process is the effective method to remove the spikes at rims of pattern. • A considerable improvement over patterning quality is obtained by proposed method. - Abstract: In this paper, an indium–tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass–ITO–gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated.

Enhancement of EUV emission from a liquid microjet target by use of dual laser pulses

Science.gov (United States)

Higashiguchi, Takeshi; Rajyaguru, Chirag; Koga, Masato; Kawasaki, Keita; Sasaki, Wataru; Kubodera, Shoichi; Kikuchi, Takashi; Yugami, Noboru; Kawata, Shigeo; Andreev, Alexander A.

2005-03-01

Extreme ultraviolet (EUV) radiation at the wavelength of around 13nm waws observed from a laser-produced plasma using continuous water-jet. Strong dependence of the conversion efficiency (CE) on the laser focal spot size and jet diameter was observed. The EUV CE at a given laser spot size and jet diameter was further enhanced using double laser pulses, where a pre-pulse was used for initial heating of the plasma.

Solar Tornadoes Triggered by Interaction between Filaments and EUV Jets

Energy Technology Data Exchange (ETDEWEB)

Chen, Huadong; Zhang, Jun; Ma, Suli [Key Laboratory of Solar Activity, National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China); Yan, Xiaoli [Yunnan Observatories, Chinese Academy of Sciences, Kunming 650011 (China); Xue, Jianchao, E-mail: hdchen@nao.cas.cn, E-mail: zjun@nao.cas.cn [Key Laboratory for Dark Matter and Space Science, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China)

2017-05-20

We investigate the formations and evolutions of two successive solar tornadoes in/near AR 12297 during 2015 March 19–20. Recurrent EUV jets close to two filaments were detected along a large-scale coronal loop prior to the appearances of the tornadoes. Under the disturbances from the activities, the filaments continually ascended and finally interacted with the loops tracked by the jets. Subsequently, the structures of the filaments and the loop were merged together, probably via magnetic reconnections, and formed tornado-like structures with a long spiral arm. Our observations suggest that solar tornadoes can be triggered by the interaction between filaments and nearby coronal jets, which has rarely been reported before. At the earlier development phase of the first tornado, about 30 small-scale sub-jets appeared in the tornado’s arm, accompanied by local EUV brightenings. They have an ejection direction approximately vertical to the axis of the arm and a typical maximum speed of ∼280 km s{sup −1}. During the ruinations of the two tornadoes, fast plasma outflows from the strong EUV brightenings inside tornadoes are observed, in company with the untangling or unwinding of the highly twisted tornado structures. These observational features indicate that self reconnections probably occurred between the tangled magnetic fields of the tornadoes and resulted in the rapid disintegrations and disappearances of the tornadoes. According to the reconnection theory, we also derive the field strength of the tornado core to be ∼8 G.

Solar Tornadoes Triggered by Interaction between Filaments and EUV Jets

International Nuclear Information System (INIS)

Chen, Huadong; Zhang, Jun; Ma, Suli; Yan, Xiaoli; Xue, Jianchao

2017-01-01

We investigate the formations and evolutions of two successive solar tornadoes in/near AR 12297 during 2015 March 19–20. Recurrent EUV jets close to two filaments were detected along a large-scale coronal loop prior to the appearances of the tornadoes. Under the disturbances from the activities, the filaments continually ascended and finally interacted with the loops tracked by the jets. Subsequently, the structures of the filaments and the loop were merged together, probably via magnetic reconnections, and formed tornado-like structures with a long spiral arm. Our observations suggest that solar tornadoes can be triggered by the interaction between filaments and nearby coronal jets, which has rarely been reported before. At the earlier development phase of the first tornado, about 30 small-scale sub-jets appeared in the tornado’s arm, accompanied by local EUV brightenings. They have an ejection direction approximately vertical to the axis of the arm and a typical maximum speed of ∼280 km s −1 . During the ruinations of the two tornadoes, fast plasma outflows from the strong EUV brightenings inside tornadoes are observed, in company with the untangling or unwinding of the highly twisted tornado structures. These observational features indicate that self reconnections probably occurred between the tangled magnetic fields of the tornadoes and resulted in the rapid disintegrations and disappearances of the tornadoes. According to the reconnection theory, we also derive the field strength of the tornado core to be ∼8 G.

Solar Tornadoes Triggered by Interaction between Filaments and EUV Jets

Science.gov (United States)

Chen, Huadong; Zhang, Jun; Ma, Suli; Yan, Xiaoli; Xue, Jianchao

2017-05-01

We investigate the formations and evolutions of two successive solar tornadoes in/near AR 12297 during 2015 March 19-20. Recurrent EUV jets close to two filaments were detected along a large-scale coronal loop prior to the appearances of the tornadoes. Under the disturbances from the activities, the filaments continually ascended and finally interacted with the loops tracked by the jets. Subsequently, the structures of the filaments and the loop were merged together, probably via magnetic reconnections, and formed tornado-like structures with a long spiral arm. Our observations suggest that solar tornadoes can be triggered by the interaction between filaments and nearby coronal jets, which has rarely been reported before. At the earlier development phase of the first tornado, about 30 small-scale sub-jets appeared in the tornado’s arm, accompanied by local EUV brightenings. They have an ejection direction approximately vertical to the axis of the arm and a typical maximum speed of ˜280 km s-1. During the ruinations of the two tornadoes, fast plasma outflows from the strong EUV brightenings inside tornadoes are observed, in company with the untangling or unwinding of the highly twisted tornado structures. These observational features indicate that self reconnections probably occurred between the tangled magnetic fields of the tornadoes and resulted in the rapid disintegrations and disappearances of the tornadoes. According to the reconnection theory, we also derive the field strength of the tornado core to be ˜8 G.

SU-8 negative photoresist for optical mask manufacturing

Science.gov (United States)

Bogdanov, Alexei L.

2000-06-01

The requirements for better control, linearity, and uniformity of critical dimension (CD) on photomasks in fabrication of 180 and 150 nm generation devices result in increasing demand for thinner, more etching durable, and more sensitive e-beam resists. Novolac based resists with chemical amplification have been a choice for their sensitivity and stability during etching. However, difficult CD control due to the acid catalyzer diffusion and quite narrow post exposure bake (PEB) process window are some of the major drawbacks of these resists. SU-8 is recently introduced to the market negative photoresist. High sensitivity, fairly good adhesion properties, and relatively simple processing of SU-8 make it a good substitution for novolac based chemically amplified negative e-beam resists in optical mask manufacturing. The replacement of traditional chemically amplified resists by SU- 8 can increase the process latitude and reduce resist costs. Among the obvious drawbacks of SU-8 are the use of solvent- based developer and demand of oxygen plasma for resist removal. In this paper the use of SU-8 for optical mask manufacturing is reported. All steps of resist film preparation, exposure and development are paid a share of attention. Possibilities to use reactive ion etching (RIE) with oxygen in order to increase resist mask contrast are discussed. Special exposure strategy (pattern outlining) was employed to further improve the edge definition. The resist PEB temperature and time were studied to estimate their weight in overall CD control performance. Specially designed test patterns with 0.25 micrometer design rule could be firmly transferred into a chromium layer both by wet etching and ion milling. Influence of exposure dose variation on the pattern CD change was studied.

4-D modeling of CME expansion and EUV dimming observed with STEREO/EUVI

Directory of Open Access Journals (Sweden)

M. J. Aschwanden

2009-08-01

Full Text Available This is the first attempt to model the kinematics of a CME launch and the resulting EUV dimming quantitatively with a self-consistent model. Our 4-D-model assumes self-similar expansion of a spherical CME geometry that consists of a CME front with density compression and a cavity with density rarefaction, satisfying mass conservation of the total CME and swept-up corona. The model contains 14 free parameters and is fitted to the 25 March 2008 CME event observed with STEREO/A and B. Our model is able to reproduce the observed CME expansion and related EUV dimming during the initial phase from 18:30 UT to 19:00 UT. The CME kinematics can be characterized by a constant acceleration (i.e., a constant magnetic driving force. While the observations of EUVI/A are consistent with a spherical bubble geometry, we detect significant asymmetries and density inhomogeneities with EUVI/B. This new forward-modeling method demonstrates how the observed EUV dimming can be used to model physical parameters of the CME source region, the CME geometry, and CME kinematics.

Study of EUV induced defects on few-layer graphene

NARCIS (Netherlands)

Gao, An; Rizo, P.J.; Zoethout, E.; Scaccabarozzi, L.; Lee, Christopher James; Banine, V.; Bijkerk, Frederik

2012-01-01

Defects in graphene greatly affect its properties1-3. Radiation induced-defects may reduce the long-term survivability of graphene-based nano-devices. Here, we expose few-layer graphene to extreme ultraviolet (EUV, 13.5nm) radiation and show there is a power-dependent increase in defect density. We

Formation dynamics of UV and EUV induced hydrogen plasma

NARCIS (Netherlands)

Dolgov, A.A.; Lee, Christopher James; Yakushev, O.; Lopaev, D.V.; Abrikosov, A.; Krivtsun, V.M.; Zotovich, A.; Bijkerk, F.

2014-01-01

The comparative study of the dynamics of ultraviolet (UV) and extreme ultraviolet (EUV) induced hydrogen plasma was performed. It was shown that for low H2 pressures and bias voltages, the dynamics of the two plasmas are significantly different. In the case of UV radiation, the plasma above the

Response of inorganic materials to laser - plasma EUV radiation focused with a lobster eye collector

Science.gov (United States)

Bartnik, Andrzej; Fiedorowicz, Henryk; Jarocki, Roman; Kostecki, Jerzy; Szczurek, Miroslaw; Havlikova, Radka; Pína, Ladislav; Švéda, Libor; Inneman, Adolf

2007-05-01

A single photon of EUV radiation carries enough energy to break any chemical bond or excite electrons from inner atomic shells. It means that the radiation regardless of its intensity can modify chemical structure of molecules. It is the reason that the radiation even with low intensity can cause fragmentation of long chains of organic materials and desorption of small parts from their surface. In this work interaction of EUV radiation with inorganic materials was investigated. Different inorganic samples were irradiated with a 10 Hz laser - plasma EUV source based on a gas puff target. The radiation was focused on a sample surface using a lobster eye collector. Radiation fluence at the surface reached 30 mJ/cm2 within a wavelength range 7 - 20 nm. In most cases there was no surface damage even after several minutes of irradiation. In some cases there could be noticed discolouration of an irradiated surface or evidences of thermal effects. In most cases however luminescent and scattered radiation was observed. The luminescent radiation was emitted in different wavelength ranges. It was recorded in a visible range of radiation and also in a wide wavelength range including UV, VUV and EUV. The radiation was especially intense in a case of non-metallic chemical compounds.

Impact of MSD and mask manufacture errors on 45nm-node lithography

Science.gov (United States)

Han, Chunying; Li, Yanqiu; Liu, Lihui; Guo, Xuejia; Wang, Xuxia; Yang, Jianhong

2012-10-01

Critical Dimension Uniformity (CDU) is quite sensitive in 45nm node lithography and beyond, thus, more attentions should be paid on the controlling of CDU. Moving Standard Deviation (MSD) and Mask Manufacture Errors (MMEs) including the Mask Critical Dimension Error (MCDE), Mask Transmittance Error (MTE) and Mask Phase Error (MPE) are the two important factors influencing CDU. The study on the impact of MSD and MMEs is a helpful way to improve the lithographic quality. Previous researches often emphasize on the single impact of MSD or MMEs, however the impact of both of them usually exists simultaneously. The studies on the co-impact of MSD and MMEs are more significant. In this paper, the impact and the cross-talk between MSD and MMEs on Critical Dimension (CD) and Exposure Latitude verse Depth of Focus (EL-DOF) for different pattern under various illumination conditions have been evaluated by simulation, which is carried on PROLITHTM X3 and in-house software IntLitho. And then, the MSD's tolerance with the existence of MMEs is discussed. The simulation results show that CD error caused by the co-existence of MSD and MMEs is not the simple algebraic sum of the individual CD error caused by MSD or MMEs. The CD error becomes more pronounced when the MSD and MMEs interact with each other. The studies on the tolerance reveal that the tolerance of MSD decreases due to MMEs' existence and mainly depends on the mask pattern's pitch.

Optical modeling of Fresnel zoneplate microscopes

International Nuclear Information System (INIS)

Naulleau, Patrick P.; Mochi, Iacopo; Goldberg, Kenneth A.

2011-01-01

Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and aerial-image microscopy performed near the 13.5 nm wavelength. Arguably the most cost-effective and rapid path to proliferating this capability is through the development of Fresnel zoneplate-based microscopes. Given the relative obscurity of such systems, however, modeling tools are not necessarily optimized to deal with them and their imaging properties are poorly understood. Here we present a modeling methodology to analyze zoneplate microscopes based on commercially available optical modeling software and use the technique to investigate the imaging performance of an off-axis EUV microscope design. The modeling predicts that superior performance can be achieved by tilting the zoneplate, making it perpendicular to the chief ray at the center of the field, while designing the zoneplate to explicitly work in that tilted plane. Although the examples presented here are in the realm of EUV mask inspection, the methods described and analysis results are broadly applicable to zoneplate microscopes in general, including full-field soft-x-ray microscopes routinely used in the synchrotron community.

Discharge plasmas as EUV Sources for Future Micro Lithography

Science.gov (United States)

Kruecken, Thomas

2007-08-01

Future extreme ultraviolet (EUV) lithography will require very high radiation intensities in a narrow wavelength range around 13.5 nm, which is most efficiently emitted as line radiation by highly ionized heavy particles. Currently the most intense EUV sources are based on xenon or tin gas discharges. After having investigated the limits of a hollow cathode triggered xenon pinch discharge Philips Extreme UV favors a laser triggered tin vacuum spark discharge. Plasma and radiation properties of these highly transient discharges will be compared. Besides simple MHD-models the ADAS software package has been used to generate important atomic and spectral data of the relevant ion stages. To compute excitation and radiation properties, collisional radiative equilibria of individual ion stages are computed. For many lines opacity effects cannot be neglected. In the xenon discharges the optical depths allow for a treatment based on escape factors. Due to the rapid change of plasma parameters the abundancies of the different ionization stages must be computed dynamically. This requires effective ionization and recombination rates, which can also be supplied by ADAS. Due to very steep gradients (up to a couple orders of magnitude per mm) the plasma of tin vacuum spark discharges is very complicated. Therefore we shall describe here only some technological aspects of our tin EUV lamp: The electrode system consists of two rotating which are pulled through baths of molten tin such that a tin film remains on their surfaces. With a laser pulse some tin is ablated from one of the wheels and travels rapidly through vacuum towards the other rotating wheel. When the tin plasma reaches the other electrodes it ignites and the high current phase starts, i.e. the capacitor bank is unloaded, the plasma is pinched and EUV is radiated. Besides the good spectral properties of tin this concept has some other advantages: Erosion of electrodes is no severe problem as the tin film is

Mask alignment system for semiconductor processing

Science.gov (United States)

Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.; Grant, Christopher N.

2017-02-14

A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered onto the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.

2012 Mask Industry Survey

Science.gov (United States)

Malloy, Matt; Litt, Lloyd C.

2012-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

Binary Masking & Speech Intelligibility

DEFF Research Database (Denmark)

Boldt, Jesper

The purpose of this thesis is to examine how binary masking can be used to increase intelligibility in situations where hearing impaired listeners have difficulties understanding what is being said. The major part of the experiments carried out in this thesis can be categorized as either experime......The purpose of this thesis is to examine how binary masking can be used to increase intelligibility in situations where hearing impaired listeners have difficulties understanding what is being said. The major part of the experiments carried out in this thesis can be categorized as either...... experiments under ideal conditions or as experiments under more realistic conditions useful for real-life applications such as hearing aids. In the experiments under ideal conditions, the previously defined ideal binary mask is evaluated using hearing impaired listeners, and a novel binary mask -- the target...... binary mask -- is introduced. The target binary mask shows the same substantial increase in intelligibility as the ideal binary mask and is proposed as a new reference for binary masking. In the category of real-life applications, two new methods are proposed: a method for estimation of the ideal binary...

Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design

Science.gov (United States)

Wang, Ruoping; Grobman, Warren D.; Reich, Alfred J.; Thompson, Matthew A.

2002-03-01

In this paper we introduce the concept and design of a novel phase shift mask technology, Polarized Phase Shift Mask (P:PSM). The P:PSM technology utilizes non-interference between orthogonally polarized light sources to avoid undesired destructive interference seen in conventional two-phase shift mask technology. Hence P:PSM solves the well-known 'phase edge' or 'phase conflict' problem. By obviating the 2nd exposure and 2nd mask in current Complementary Phase Shift Mask (C:PSM) technology, this single mask/single exposure technology offers significant advantages towards photolithography process as well as pattern design. We use examples of typical design and process difficulties associated with the C:PSM technology to illustrate the advantages of the P:PSM technology. We present preliminary aerial image simulation results that support the potential of this new reticle technology for enhanced design flexibility. We also propose possible mask structures and manufacturing methods for building a P:PSM.

Traditional Chinese Masks Reveal Customs

Institute of Scientific and Technical Information of China (English)

1996-01-01

CHINESE masks are undoubtedly an important component in the worldwide mask culture. Minority nationality masks are a major component of China’s mask culture. Traditional Chinese masks, or nuo, represent a cultural component which originated from religious rites in prehistoric times. Various types of nuo are highly valuable for studies of Chinese customs.

Resist-based measurement of contrast transfer function in a 0.3-NA microfield optic

International Nuclear Information System (INIS)

Cain, Jason P.; Naulleau, Patrick; Spanos, Costas J.

2005-01-01

Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patterning, the projection optics must be of extremely high quality in order to meet this potential. One key metric of the projection optic quality is the contrast transfer function (CTF), which is a measure of the aerial image contrast as a function of pitch. A static microfield exposure tool based on the 0.3-NA MET optic and operating at a wavelength of 13.5 nm has been installed at the Advanced Light Source, a synchrotron facility at the Lawrence Berkeley National Laboratory. This tool provides a platform for a wide variety of research into EUV lithography. In this work we present resist-based measurements of the contrast transfer function for the MET optic. These measurements are based upon line/space patterns printed in several different EUV photoresists. The experimental results are compared with the CTF in aerial-image simulations using the aberrations measured in the projection optic using interferometry. In addition, the CTF measurements are conducted for both bright-field and dark-field mask patterns. Finally, the orientation dependence of the CTF is measured in order to evaluate the effect of non-rotationally symmetric lens aberrations. These measurements provide valuable information in interpreting the results of other experiments performed using the MET and similar systems

Simulation study of CD variation caused by field edge effects and out-of-band radiation in EUVL

Science.gov (United States)

Gao, Weimin; Niroomand, Ardavan; Lorusso, Gian F.; Boone, Robert; Lucas, Kevin; Demmerle, Wolfgang

2013-09-01

Although extreme ultraviolet lithography (EUVL) remains a promising candidate for semiconductor device manufacturing of the 1x nm half pitch node and beyond, many technological burdens have to be overcome. The "field edge effect" in EUVL is one of them. The image border region of an EUV mask,also known as the "black border" (BB), reflects a few percent of the incident EUV light, resulting in a leakage of light into neighboring exposure fields, especially at the corner of the field where three adjacent exposures take place. This effect significantly impacts on CD uniformity (CDU) across the exposure field. To avoid this phenomenon, a light-shielding border is introduced by etching away the entire absorber and multi-layer (ML)at the image border region of the EUV mask. In this paper, we present a method of modeling the field edge effect (also called the BB effect) by using rigorous lithography simulation with a calibrated resist model. An additional "flare level" at the field edge is introduced on top of the exposure tool flare map to account for the BB effect. The parameters in this model include the reflectivity and the width of the BB, which are mainly determining the leakage of EUV light and its influence range, respectively. Another parameter is the transition width which represents the half shadow effect of the reticle masking blades. By setting the corresponding parameters, the simulation results match well the experimental results obtained at the imec's NXE:3100 EUV exposure tool. Moreover, these results indicate that the out-of-band (OoB) radiation also contributes to the CDU. Using simulation we can also determine the OoB effect rigorouslyusing the methodology of an "effective mask blank". The study in this paper demonstrates that the impact of BB and OoB effects on CDU can be well predicted by simulations.

Study of CD variation caused by the black border effect and out-of-band radiation in extreme ultraviolet lithography

Science.gov (United States)

Gao, Weimin; Niroomand, Ardavan; Lorusso, Gian F.; Boone, Robert; Lucas, Kevin; Demmerle, Wolfgang

2014-04-01

Although extreme ultraviolet lithography (EUVL) remains a promising candidate for semiconductor device manufacturing of the 1× nm half pitch node and beyond, many technological burdens have to be overcome. The "field edge effect" in EUVL is one of them. The image border region of an EUV mask, also known as the "black border" (BB), reflects a few percent of the incident EUV light, resulting in a leakage of light into neighboring exposure fields, especially at the corner of the field where three adjacent exposures take place. This effect significantly impacts on critical dimension (CD) uniformity (CDU) across the exposure field. To avoid this phenomenon, a light-shielding border is introduced by etching away the entire absorber and multilayer at the image border region of the EUV mask. We present a method of modeling the field edge effect (also called the BB effect) by using rigorous lithography simulation with a calibrated resist model. An additional "flare level" at the field edge is introduced on top of the exposure tool flare map to account for the BB effect. The parameters in this model include the reflectivity and the width of the BB, which are mainly determining the leakage of EUV light and its influence range, respectively. Another parameter is the transition width which represents the half shadow effect of the reticle masking blades. By setting the corresponding parameters, the simulation results match well the experimental results obtained at the IMEC's NXE:3100 EUV exposure tool. Moreover, these results indicate that the out-of-band (OoB) radiation also contributes to the CDU. Using simulation, we can also determine the OoB effect rigorously using the methodology of an "effective mask blank." The study demonstrates that the impact of BB and OoB effects on CDU can be well predicted by simulations.

Auditory Time-Frequency Masking for Spectrally and Temporally Maximally-Compact Stimuli.

Science.gov (United States)

Necciari, Thibaud; Laback, Bernhard; Savel, Sophie; Ystad, Sølvi; Balazs, Peter; Meunier, Sabine; Kronland-Martinet, Richard

2016-01-01

Many audio applications perform perception-based time-frequency (TF) analysis by decomposing sounds into a set of functions with good TF localization (i.e. with a small essential support in the TF domain) using TF transforms and applying psychoacoustic models of auditory masking to the transform coefficients. To accurately predict masking interactions between coefficients, the TF properties of the model should match those of the transform. This involves having masking data for stimuli with good TF localization. However, little is known about TF masking for mathematically well-localized signals. Most existing masking studies used stimuli that are broad in time and/or frequency and few studies involved TF conditions. Consequently, the present study had two goals. The first was to collect TF masking data for well-localized stimuli in humans. Masker and target were 10-ms Gaussian-shaped sinusoids with a bandwidth of approximately one critical band. The overall pattern of results is qualitatively similar to existing data for long maskers. To facilitate implementation in audio processing algorithms, a dataset provides the measured TF masking function. The second goal was to assess the potential effect of auditory efferents on TF masking using a modeling approach. The temporal window model of masking was used to predict present and existing data in two configurations: (1) with standard model parameters (i.e. without efferents), (2) with cochlear gain reduction to simulate the activation of efferents. The ability of the model to predict the present data was quite good with the standard configuration but highly degraded with gain reduction. Conversely, the ability of the model to predict existing data for long maskers was better with than without gain reduction. Overall, the model predictions suggest that TF masking can be affected by efferent (or other) effects that reduce cochlear gain. Such effects were avoided in the experiment of this study by using maximally

Respiratory source control using a surgical mask: An in vitro study.

Science.gov (United States)

Patel, Rajeev B; Skaria, Shaji D; Mansour, Mohamed M; Smaldone, Gerald C

2016-07-01

Cough etiquette and respiratory hygiene are forms of source control encouraged to prevent the spread of respiratory infection. The use of surgical masks as a means of source control has not been quantified in terms of reducing exposure to others. We designed an in vitro model using various facepieces to assess their contribution to exposure reduction when worn at the infectious source (Source) relative to facepieces worn for primary (Receiver) protection, and the factors that contribute to each. In a chamber with various airflows, radiolabeled aerosols were exhaled via a ventilated soft-face manikin head using tidal breathing and cough (Source). Another manikin, containing a filter, quantified recipient exposure (Receiver). The natural fit surgical mask, fitted (SecureFit) surgical mask and an N95-class filtering facepiece respirator (commonly known as an "N95 respirator") with and without a Vaseline-seal were tested. With cough, source control (mask or respirator on Source) was statistically superior to mask or unsealed respirator protection on the Receiver (Receiver protection) in all environments. To equal source control during coughing, the N95 respirator must be Vaseline-sealed. During tidal breathing, source control was comparable or superior to mask or respirator protection on the Receiver. Source control via surgical masks may be an important adjunct defense against the spread of respiratory infections. The fit of the mask or respirator, in combination with the airflow patterns in a given setting, are significant contributors to source control efficacy. Future clinical trials should include a surgical mask source control arm to assess the contribution of source control in overall protection against airborne infection.

Constructing optimized binary masks for reservoir computing with delay systems

Science.gov (United States)

Appeltant, Lennert; van der Sande, Guy; Danckaert, Jan; Fischer, Ingo

2014-01-01

Reservoir computing is a novel bio-inspired computing method, capable of solving complex tasks in a computationally efficient way. It has recently been successfully implemented using delayed feedback systems, allowing to reduce the hardware complexity of brain-inspired computers drastically. In this approach, the pre-processing procedure relies on the definition of a temporal mask which serves as a scaled time-mutiplexing of the input. Originally, random masks had been chosen, motivated by the random connectivity in reservoirs. This random generation can sometimes fail. Moreover, for hardware implementations random generation is not ideal due to its complexity and the requirement for trial and error. We outline a procedure to reliably construct an optimal mask pattern in terms of multipurpose performance, derived from the concept of maximum length sequences. Not only does this ensure the creation of the shortest possible mask that leads to maximum variability in the reservoir states for the given reservoir, it also allows for an interpretation of the statistical significance of the provided training samples for the task at hand.

The EUV Spectrum of Sunspot Plumes Observed by SUMER on ...

Indian Academy of Sciences (India)

tribpo

Abstract. We present results from sunspot observations obtained by. SUMER on SOHO. In sunspot plumes the EUV spectrum differs from the quiet Sun; continua are observed with different slopes and intensities; emission lines from molecular hydrogen and many unidentified species indicate unique plasma conditions ...

Effect of solar UV/EUV heating on the intensity and spatial distribution of Jupiter's synchrotron radiation

Science.gov (United States)

Kita, H.; Misawa, H.; Tsuchiya, F.; Tao, C.; Morioka, A.

2013-10-01

We analyzed the Very Large Array archived data observed in 2000 to determine whether solar ultraviolet (UV)/extreme ultraviolet (EUV) heating of the Jovian thermosphere causes variations in the total flux density and dawn-dusk asymmetry (the characteristic differences between the peak emissions at dawn and dusk) of Jupiter's synchrotron radiation (JSR). The total flux density varied by 10% over 6 days of observations and accorded with theoretical expectations. The average dawn-dusk peak emission ratio indicated that the dawn side emissions were brighter than those on the dusk side and this was expected to have been caused by diurnal wind induced by the solar UV/EUV. The daily variations in the dawn-dusk ratio did not correspond to the solar UV/EUV, and this finding did not support the theoretical expectation that the dawn-dusk ratio and diurnal wind velocity varies in correspondence with the solar UV/EUV. We tried to determine whether the average dawn-dusk ratio could be explained by a reasonable diurnal wind velocity. We constructed an equatorial brightness distribution model of JSR using the revised Divine-Garrett particle distribution model and used it to derive a relation between the dawn-dusk ratio and diurnal wind velocity. The estimated diurnal wind velocity reasonably corresponded to a numerical simulation of the Jovian thermosphere. We also found that realistic changes in the diurnal wind velocity could not cause the daily variations in the dawn-dusk ratio. Hence, we propose that the solar UV/EUV related variations were below the detection limit and some other processes dominated the daily variations in the dawn-dusk ratio.

Unmasking Zorro: functional importance of the facial mask in the Masked Shrike (Lanius nubicus)

OpenAIRE

Reuven Yosef; Piotr Zduniak; Piotr Tryjanowski

2012-01-01

The facial mask is a prominent feature in the animal kingdom. We hypothesized that the facial mask of shrikes allows them to hunt into the sun, which accords them detection and surprise-attack capabilities. We conducted a field experiment to determine whether the mask facilitated foraging while facing into the sun. Male shrikes with white-painted masks hunted facing away from the sun more than birds with black-painted masks, which are the natural color, and more than individuals in the contro...

Partial tripolar cochlear implant stimulation: Spread of excitation and forward masking in the inferior colliculus.

Science.gov (United States)

Bierer, Julie Arenberg; Bierer, Steven M; Middlebrooks, John C

2010-12-01

This study examines patterns of neural activity in response to single biphasic electrical pulses, presented alone or following a forward masking pulse train, delivered by a cochlear implant. Recordings were made along the tonotopic axis of the central nucleus of the inferior colliculus (ICC) in ketamine/xylazine anesthetized guinea pigs. The partial tripolar electrode configuration was used, which provided a systematic way to vary the tonotopic extent of ICC activation between monopolar (broad) and tripolar (narrow) extremes while maintaining the same peak of activation. The forward masking paradigm consisted of a 200 ms masker pulse train (1017 pulses per second) followed 10 ms later by a single-pulse probe stimulus; the current fraction of the probe was set to 0 (monopolar), 1 (tripolar), or 0.5 (hybrid), and the fraction of the masker was fixed at 0.5. Forward masking tuning profiles were derived from the amount of masking current required to just suppress the activity produced by a fixed-level probe. These profiles were sharper for more focused probe configurations, approximating the pattern of neural activity elicited by single (non-masked) pulses. The result helps to bridge the gap between previous findings in animals and recent psychophysical data. Copyright © 2010 Elsevier B.V. All rights reserved.

The Diagnostics of the kappa-Distributions from EUV Spectra

Czech Academy of Sciences Publication Activity Database

Dzifčáková, Elena; Kulinová, Alena

2010-01-01

Roč. 263, 1-2 (2010), s. 25-41 ISSN 0038-0938 R&D Projects: GA ČR GA205/09/1705 Grant - others:VEGA(SK) 1/0069/08 Institutional research plan: CEZ:AV0Z10030501 Keywords : EUV spectra * non- thermal distributions * plasma diagnostics Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics Impact factor: 3.386, year: 2010

Spectroscopic studies of xenon EUV emission in the 40-80 nm wavelength range using an absolutely calibrated monochromator

Energy Technology Data Exchange (ETDEWEB)

Merabet, H [Mathematic and Sciences Unit, Dhofar University, Salalah 211, Sultanate of (Oman); Bista, R [Department of Physics, University of Nevada Reno, Reno, NV 89557 (United States); Bruch, R [Department of Physics, University of Nevada Reno, Reno, NV 89557 (United States); Fuelling, S [Department of Physics, University of Nevada Reno, Reno, NV 89557 (United States)

2007-03-01

We have measured and identified numerous Extreme UltraViolet (EUV) radiative line structures arising from xenon (Xe) ions in charge state q = 1 to 10 in the wavelength range 40-80 nm. To obtain reasonable intensities of different charged Xe ions, we have used a compact microwave plasma source which was designed and developed at the Lawrence Berkeley National Laboratory (LBNL). The EUV emission of the ECR plasma has been measured by a 1.5 m grazing incidence monochromator that was absolutely calibrated in the 10-80 nm wavelength range using well known and calibrated EUV light at the Advanced Light Source (ALS), LBNL. This calibration has enabled us to determine absolute intensities of previously measured EUV radiative lines in the wavelengths regions investigated for different ionization stages of Xe. In addition, emission spectra of xenon ions for corresponding measured lines have been calculated. The calculations have been carried out within the relativistic Hartree-Fock (HF) approximation. Results of calculations are found to be in good agreement with current and available experimental and theoretical data.

Set Size and Mask Duration Do Not Interact in Object-Substitution Masking

Science.gov (United States)

Argyropoulos, Ioannis; Gellatly, Angus; Pilling, Michael; Carter, Wakefield

2013-01-01

Object-substitution masking (OSM) occurs when a mask, such as four dots that surround a brief target item, onsets simultaneously with the target and offsets a short time after the target, rather than simultaneously with it. OSM is a reduction in accuracy of reporting the target with the temporally trailing mask, compared with the simultaneously…

Controlled Patterning of Plasmonic Dimers by Using an Ultrathin Nanoporous Alumina Membrane as a Shadow Mask.

Science.gov (United States)

Hao, Qi; Huang, Hao; Fan, Xingce; Yin, Yin; Wang, Jiawei; Li, Wan; Qiu, Teng; Ma, Libo; Chu, Paul K; Schmidt, Oliver G

2017-10-18

We report on design and fabrication of patterned plasmonic dimer arrays by using an ultrathin anodic aluminum oxide (AAO) membrane as a shadow mask. This strategy allows for controllable fabrication of plasmonic dimers where the location, size, and orientation of each particle in the dimer pairs can be independently tuned. Particularly, plasmonic dimers with ultrasmall nanogaps down to the sub-10 nm scale as well as a large dimer density up to 1.0 × 10 10 cm -2 are fabricated over a centimeter-sized area. The plasmonic dimers exhibit significant surface-enhanced Raman scattering (SERS) enhancement with a polarization-dependent behavior, which is well interpreted by finite-difference time-domain (FDTD) simulations. Our results reveal a facile approach for controllable fabrication of large-area dimer arrays, which is of fundamental interest for plasmon-based applications in surface-enhanced spectroscopy, biochemical sensing, and optoelectronics.

EUV stimulated emission from MgO pumped by FEL pulses

Directory of Open Access Journals (Sweden)

Philippe Jonnard

2017-09-01

Full Text Available Stimulated emission is a fundamental process in nature that deserves to be investigated and understood in the extreme ultra-violet (EUV and x-ray regimes. Today, this is definitely possible through high energy density free electron laser (FEL beams. In this context, we give evidence for soft-x-ray stimulated emission from a magnesium oxide solid target pumped by EUV FEL pulses formed in the regime of travelling-wave amplified spontaneous emission in backward geometry. Our results combine two effects separately reported in previous works: emission in a privileged direction and existence of a material-dependent threshold for the stimulated emission. We develop a novel theoretical framework, based on coupled rate and transport equations taking into account the solid-density plasma state of the target. Our model accounts for both observed mechanisms that are the privileged direction for the stimulated emission of the Mg L2,3 characteristic emission and the pumping threshold.

Optical, UV, and EUV Oscillations of SS Cygni in Outburst

Science.gov (United States)

Mauche, Christopher W.

2004-07-01

I provide a review of observations in the optical, UV (HST), and EUV (EUVE and Chandra LETG) of the rapid periodic oscillations of nonmagnetic, disk-accreting, high mass-accretion rate cataclysmic variables (CVs), with particular emphasis on the dwarf nova SS Cyg in outburst. In addition, I drawn attention to a correlation, valid over nearly six orders of magnitude in frequency, between the frequencies of the quasi-periodic oscillations (QPOs) of white dwarf, neutron star, and black hole binaries. This correlation identifies the high frequency quasi-coherent oscillations (so-called ``dwarf nova oscillations'') of CVs with the kilohertz QPOs of low mass X-ray binaries (LMXBs), and the low frequency and low coherence QPOs of CVs with the horizontal branch oscillations (or the broad noise component identified as such) of LMXBs. Assuming that the same mechanisms produce the QPOs of white dwarf, neutron star, and black hole binaries, this correlation has important implications for QPO models.

Mask strategy at International SEMATECH

Science.gov (United States)

Kimmel, Kurt R.

2002-08-01

International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for its member companies to realize the International Technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. The largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. The development strategy at International SEMATCH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International Technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

Electron cyclotron resonance ion stream etching of tantalum for x-ray mask absorber

International Nuclear Information System (INIS)

Oda, Masatoshi; Ozawa, Akira; Yoshihara, Hideo

1993-01-01

Electron cyclotron resonance ion stream etching of Ta film was investigated for preparing x-ray mask absorber patterns. Ta is etched by the system at a high rate and with high selectivity. Using Cl 2 as etching gas, the etch rate decreases rapidly with decreasing pattern width below 0.5 μm and large undercutting is observed. The problems are reduced by adding Ar or O 2 gas to the Cl 2 . Etching with a mixture of Cl 2 and O 2 produces highly accurate Ta absorber patterns for x-ray masks. The pattern width dependence of the etch rate and the undercutting were simulated with a model that takes account of the angular distribution of active species incident on the sample. The experimental results agree well with those calculated assuming that the incidence angles are distributed between -36 degrees and 36 degrees. The addition of O 2 or Ar enhances ion assisted etching. 16 refs., 16 figs

Patterning control strategies for minimum edge placement error in logic devices

Science.gov (United States)

Mulkens, Jan; Hanna, Michael; Slachter, Bram; Tel, Wim; Kubis, Michael; Maslow, Mark; Spence, Chris; Timoshkov, Vadim

2017-03-01

In this paper we discuss the edge placement error (EPE) for multi-patterning semiconductor manufacturing. In a multi-patterning scheme the creation of the final pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. We describe the fidelity of the final pattern in terms of EPE, which is defined as the relative displacement of the edges of two features from their intended target position. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As an experimental test vehicle we use the 7-nm logic device patterning process flow as developed by IMEC. This patterning process is based on Self-Aligned-Quadruple-Patterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography. The computational metrology method to determine EPE is explained. It will be shown that ArF to EUV overlay, CDU from the individual process steps, and local CD and placement of the individual pattern features, are the important contributors. Based on the error budget, we developed an optimization strategy for each individual step and for the final pattern. Solutions include overlay and CD metrology based on angle resolved scatterometry, scanner actuator control to enable high order overlay corrections and computational lithography optimization to minimize imaging induced pattern placement errors of devices and metrology targets.

Evaluation of taste-masking effects of pharmaceutical sweeteners with an electronic tongue system.

Science.gov (United States)

Choi, Du Hyung; Kim, Nam Ah; Nam, Tack Soo; Lee, Sangkil; Jeong, Seong Hoon

2014-03-01

Electronic tongue systems have been developed for taste measurement of bitter drug substances in accurate taste comparison to development palatable oral formulations. This study was to evaluate the taste masking effect of conventional pharmaceutical sweeteners such as neohesperidin dihydrochalcone, sucrose, sucralose and aspartame. The model drugs were acetaminophen, ibuprofen, tramadol hydrochloride, and sildenafil citrate (all at 20 mM). The degree of bitterness was measured by a multichannel taste sensor system (an electronic tongue). The data was collected by seven sensors and analyzed by a statistical method of principal components analysis (PCA). The effect of taste masking excipient was dependent on the type of model drug. Changing the concentration of taste masking excipients affected the sensitivity of taste masking effect according to the type of drug. As the excipient concentration increased, the effect of taste masking increased. Moreover, most of the sensors showed a concentration-dependent pattern of the taste-masking agents as higher concentration provided higher selectivity. This might indicate that the sensors can detect small concentration changes of a chemical in solution. These results suggest that the taste masking could be evaluated based on the data of the electronic tongue system and that the formulation development process could be performed in a more efficient way.

The relationship between masking and short-term consolidation during recall from visual working memory.

Science.gov (United States)

Ricker, Timothy J; Sandry, Joshua

2018-04-10

The presentation of a similar but irrelevant stimulus immediately following presentation of a memory item is called masking. Masking is known to reduce performance on working memory tests. This is the type of memory used to hold information in mind for brief periods of time for use in ongoing cognition. Two approaches to understanding masking effects have been proposed in different literatures. Working memory researchers often assume that the reduction in working memory performance after masking is because masking interferes with a transient sensory representation that is needed to complete consolidation into a working memory state. Researchers focused on the attentional blink, a finding that attention cannot be directed to new stimuli during working memory consolidation, have an alternative theory. Attentional blink researchers assume that masking slows the short-term consolidation process, thereby extending the length of the attentional blink. In two experiments, we contrast these two approaches to explaining masking effects and investigate the validity of both hypotheses. Some aspects of both approaches are validated, but neither theoretical perspective alone sufficiently explains the entire pattern of results. © 2018 New York Academy of Sciences.

Solar Cycle Variation of Microwave Polar Brightening and EUV Coronal Hole Observed by Nobeyama Radioheliograph and SDO/AIA

Science.gov (United States)

Kim, Sujin; Park, Jong-Yeop; Kim, Yeon-Han

2017-08-01

We investigate the solar cycle variation of microwave and extreme ultraviolet (EUV) intensity in latitude to compare microwave polar brightening (MPB) with the EUV polar coronal hole (CH). For this study, we used the full-sun images observed in 17 GHz of the Nobeyama Radioheliograph from 1992 July to 2016 November and in two EUV channels of the Atmospheric Imaging Assembly (AIA) 193 Å and 171 Å on the Solar Dynamics Observatory (SDO) from 2011 January to 2016 November. As a result, we found that the polar intensity in EUV is anti-correlated with the polar intensity in microwave. Since the depression of EUV intensity in the pole is mostly owing to the CH appearance and continuation there, the anti-correlation in the intensity implies the intimate association between the polar CH and the MPB. Considering the report of tet{gopal99} that the enhanced microwave brightness in the CH is seen above the enhanced photospheric magnetic field, we suggest that the pole area during the solar minimum has a stronger magnetic field than the quiet sun level and such a strong field in the pole results in the formation of the polar CH. The emission mechanism of the MPB and the physical link with the polar CH are not still fully understood. It is necessary to investigate the MPB using high resolution microwave imaging data, which can be obtained by the high performance large-array radio observatories such as the ALMA project.

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

Science.gov (United States)

Xu, Yongan; Faure, Tom; Viswanathan, Ramya; Lobb, Granger; Wistrom, Richard; Burns, Sean; Hu, Lin; Graur, Ioana; Bleiman, Ben; Fischer, Dan; Mignot, Yann; Sakamoto, Yoshifumi; Toda, Yusuke; Bolton, John; Bailey, Todd; Felix, Nelson; Arnold, John; Colburn, Matthew

2016-04-01

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

NARCIS (Netherlands)

Huang, Qiushi; Medvedev, Viacheslav; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Louis, Eric; Bijkerk, Frederik

2017-01-01

Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV

Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

International Nuclear Information System (INIS)

Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

2009-01-01

This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

Material design of negative-tone polyphenol resist for EUV and EB lithography

Science.gov (United States)

Kojima, Kyoko; Mori, Shigeki; Shiono, Daiju; Hada, Hideo; Onodera, Junichi

2007-03-01

In order to enable design of a negative-tone polyphenol resist using polarity-change reaction, five resist compounds (3M6C-MBSA-BLs) with different number of functional group of γ-hydroxycarboxyl acid were prepared and evaluated by EB lithography. The resist using mono-protected compound (3M6C-MBSA-BL1a) showed 40-nm hp resolution at an improved dose of 52 μC/cm2 probably due to removal of a non-protected polyphenol while the sensitivity of the resist using a compound of protected ratio of 1.1 on average with distribution of different protected ratio was 72 μC/cm2. For evaluation of the di-protected compound based resist, a di-protected polyphenol was synthesized by a newly developed synthetic route of 3-steps reaction, which is well-suited for mass production. The resist using di-protected compound (3M6C-MBSA-BL2b) also showed 40-nm hp resolution at a dose of 40 μC/cm2, which was faster than that of mono-protected resist. Fundamental EUV lithographic evaluation of the resist using 3M6C-MBSA-BL2b by an EUV open frame exposure tool (EUVES-7000) gave its estimated optimum sensitivity of 7 mJ/cm2 and a proof of fine development behavior without any swelling.

Masks in Pedagogical Practice

Science.gov (United States)

Roy, David

2016-01-01

In Drama Education mask work is undertaken and presented as both a methodology and knowledge base. There are numerous workshops and journal articles available for teachers that offer knowledge or implementation of mask work. However, empirical examination of the context or potential implementation of masks as a pedagogical tool remains…

Keeping African Masks Real

Science.gov (United States)

Waddington, Susan

2012-01-01

Art is a good place to learn about our multicultural planet, and African masks are prized throughout the world as powerfully expressive artistic images. Unfortunately, multicultural education, especially for young children, can perpetuate stereotypes. Masks taken out of context lose their meaning and the term "African masks" suggests that there is…

Lensless digital holography with diffuse illumination through a pseudo-random phase mask.

Science.gov (United States)

Bernet, Stefan; Harm, Walter; Jesacher, Alexander; Ritsch-Marte, Monika

2011-12-05

Microscopic imaging with a setup consisting of a pseudo-random phase mask, and an open CMOS camera, without an imaging objective, is demonstrated. The pseudo random phase mask acts as a diffuser for an incoming laser beam, scattering a speckle pattern to a CMOS chip, which is recorded once as a reference. A sample which is afterwards inserted somewhere in the optical beam path changes the speckle pattern. A single (non-iterative) image processing step, comparing the modified speckle pattern with the previously recorded one, generates a sharp image of the sample. After a first calibration the method works in real-time and allows quantitative imaging of complex (amplitude and phase) samples in an extended three-dimensional volume. Since no lenses are used, the method is free from lens abberations. Compared to standard inline holography the diffuse sample illumination improves the axial sectioning capability by increasing the effective numerical aperture in the illumination path, and it suppresses the undesired so-called twin images. For demonstration, a high resolution spatial light modulator (SLM) is programmed to act as the pseudo-random phase mask. We show experimental results, imaging microscopic biological samples, e.g. insects, within an extended volume at a distance of 15 cm with a transverse and longitudinal resolution of about 60 μm and 400 μm, respectively.

Temperature rise of the mask-resist assembly during LIGA exposure

International Nuclear Information System (INIS)

Ting, Aili

2004-01-01

Deep X-ray lithography on PMMA resist is used in the LIGA process. The resist is exposed to synchrotron X-rays through a patterned mask and then is developed in a liquid developer to make high aspect ratio microstructures. The limitations in dimensional accuracies of the LIGA generated microstructure originate from many sources, including synchrotron and X-ray physics, thermal and mechanical properties of mask and resist, and from the kinetics of the developer. This work addresses the thermal analysis and temperature rise of the mask-resist assembly during exposure in air at the Advanced Light Source (ALS) synchrotron. The concern is that dimensional errors generated at the mask and the resist due to thermal expansion will lower the accuracy of the lithography. We have developed a three-dimensional finite-element model of the mask and resist assembly that includes a mask with absorber, a resist with substrate, three metal holders, and a water-cooling block. We employed the LIGA exposure-development software LEX-D to calculate volumetric heat sources generated in the assembly by X-ray absorption and the commercial software ABAQUS to calculate heat transfer including thermal conduction inside the assembly, natural and forced convection, and thermal radiation. at assembly outer and/or inner surfaces. The calculations of assembly maximum temperature. have been compared with temperature measurements conducted at ALS. In some of these experiments, additional cooling of the assembly was produced by forced nitrogen flow ('nitrogen jets') directed at the mask surface. The temperature rise in the silicon mask and the mask holder comes directly from the X-ray absorption, but nitrogen jets carry away a significant portion of heat energy from the mask surface, while natural convection carries away negligibly small amounts energy from the holder. The temperature rise in PMMA resist is mainly from heat conducted from the silicon substrate backward to the resist and from the inner

Auditory Time-Frequency Masking for Spectrally and Temporally Maximally-Compact Stimuli.

Directory of Open Access Journals (Sweden)

Thibaud Necciari

Full Text Available Many audio applications perform perception-based time-frequency (TF analysis by decomposing sounds into a set of functions with good TF localization (i.e. with a small essential support in the TF domain using TF transforms and applying psychoacoustic models of auditory masking to the transform coefficients. To accurately predict masking interactions between coefficients, the TF properties of the model should match those of the transform. This involves having masking data for stimuli with good TF localization. However, little is known about TF masking for mathematically well-localized signals. Most existing masking studies used stimuli that are broad in time and/or frequency and few studies involved TF conditions. Consequently, the present study had two goals. The first was to collect TF masking data for well-localized stimuli in humans. Masker and target were 10-ms Gaussian-shaped sinusoids with a bandwidth of approximately one critical band. The overall pattern of results is qualitatively similar to existing data for long maskers. To facilitate implementation in audio processing algorithms, a dataset provides the measured TF masking function. The second goal was to assess the potential effect of auditory efferents on TF masking using a modeling approach. The temporal window model of masking was used to predict present and existing data in two configurations: (1 with standard model parameters (i.e. without efferents, (2 with cochlear gain reduction to simulate the activation of efferents. The ability of the model to predict the present data was quite good with the standard configuration but highly degraded with gain reduction. Conversely, the ability of the model to predict existing data for long maskers was better with than without gain reduction. Overall, the model predictions suggest that TF masking can be affected by efferent (or other effects that reduce cochlear gain. Such effects were avoided in the experiment of this study by using

Lithography-based automation in the design of program defect masks

Science.gov (United States)

Vakanas, George P.; Munir, Saghir; Tejnil, Edita; Bald, Daniel J.; Nagpal, Rajesh

2004-05-01

In this work, we are reporting on a lithography-based methodology and automation in the design of Program Defect masks (PDM"s). Leading edge technology masks have ever-shrinking primary features and more pronounced model-based secondary features such as optical proximity corrections (OPC), sub-resolution assist features (SRAF"s) and phase-shifted mask (PSM) structures. In order to define defect disposition specifications for critical layers of a technology node, experience alone in deciding worst-case scenarios for the placement of program defects is necessary but may not be sufficient. MEEF calculations initiated from layout pattern data and their integration in a PDM layout flow provide a natural approach for improvements, relevance and accuracy in the placement of programmed defects. This methodology provides closed-loop feedback between layout and hard defect disposition specifications, thereby minimizing engineering test restarts, improving quality and reducing cost of high-end masks. Apart from SEMI and industry standards, best-known methods (BKM"s) in integrated lithographically-based layout methodologies and automation specific to PDM"s are scarce. The contribution of this paper lies in the implementation of Design-For-Test (DFT) principles to a synergistic interaction of CAD Layout and Aerial Image Simulator to drive layout improvements, highlight layout-to-fracture interactions and output accurate program defect placement coordinates to be used by tools in the mask shop.

Masks: The Artist in Me

Science.gov (United States)

Skophammer, Karen

2009-01-01

Whether masks are made from cardboard, papier-mache, metal, wood, leather, fabric, clay or any combination of these materials, they bring out the artist in people. Young children like to wear masks when they play to pretend they were another person or animal. Masks let them fantasize and be creative. The author's students made masks representing…

Reflectance Tuning at Extreme Ultraviolet (EUV) Wavelengths with Active Multilayer Mirrors

NARCIS (Netherlands)

Bayraktar, Muharrem; Lee, Christopher James; van Goor, F.A.; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Bijkerk, Frederik

2011-01-01

At extreme ultraviolet (EUV) wavelengths the refractive power of transmission type optical components is limited, therefore reflective components are used. Reflective optics (multilayer mirrors) usually consist of many bilayers and each bilayer is composed of a high and a low refractive index

Supreme Laryngeal Mask Airway versus Face Mask during Neonatal Resuscitation: A Randomized Controlled Trial.

Science.gov (United States)

Trevisanuto, Daniele; Cavallin, Francesco; Nguyen, Loi Ngoc; Nguyen, Tien Viet; Tran, Linh Dieu; Tran, Chien Dinh; Doglioni, Nicoletta; Micaglio, Massimo; Moccia, Luciano

2015-08-01

To assess the effectiveness of supreme laryngeal mask airway (SLMA) over face mask ventilation for preventing need for endotracheal intubation at birth. We report a prospective, randomized, parallel 1:1, unblinded, controlled trial. After a short-term educational intervention on SLMA use, infants ≥34-week gestation and/or expected birth weight ≥1500 g requiring positive pressure ventilation (PPV) at birth were randomized to resuscitation by SLMA or face mask. The primary outcome was the success rate of the resuscitation devices (SLMA or face mask) defined as the achievement of an effective PPV preventing the need for endotracheal intubation. We enrolled 142 patients (71 in SLMA and 71 in face mask group, respectively). Successful resuscitation rate was significantly higher with the SLMA compared with face mask ventilation (91.5% vs 78.9%; P = .03). Apgar score at 5 minutes was significantly higher in SLMA than in face mask group (P = .02). Neonatal intensive care unit admission rate was significantly lower in SLMA than in face mask group (P = .02). No complications related to the procedure occurred. In newborns with gestational age ≥34 weeks and/or expected birth weight ≥1500 g needing PPV at birth, the SLMA is more effective than face mask to prevent endotracheal intubation. The SLMA is effective in clinical practice after a short-term educational intervention. Registered with ClinicalTrials.gov: NCT01963936. Copyright © 2015 Elsevier Inc. All rights reserved.

Normal incidence spectrophotometer using high density transmission grating technology and highly efficiency silicon photodiodes for absolute solar EUV irradiance measurements

Science.gov (United States)

Ogawa, H. S.; Mcmullin, D.; Judge, D. L.; Korde, R.

1992-01-01

New developments in transmission grating and photodiode technology now make it possible to realize spectrometers in the extreme ultraviolet (EUV) spectral region (wavelengths less than 1000 A) which are expected to be virtually constant in their diffraction and detector properties. Time dependent effects associated with reflection gratings are eliminated through the use of free standing transmission gratings. These gratings together with recently developed and highly stable EUV photodiodes have been utilized to construct a highly stable normal incidence spectrophotometer to monitor the variability and absolute intensity of the solar 304 A line. Owing to its low weight and compactness, such a spectrometer will be a valuable tool for providing absolute solar irradiance throughout the EUV. This novel instrument will also be useful for cross-calibrating other EUV flight instruments and will be flown on a series of Hitchhiker Shuttle Flights and on SOHO. A preliminary version of this instrument has been fabricated and characterized, and the results are described.

Application of Laser Plasma Sources of Soft X-rays and Extreme Ultraviolet (EUV) in Imaging, Processing Materials and Photoionization Studies

Science.gov (United States)

Fiedorowicz, H.; Bartnik, A.; Wachulak, P. W.; Jarocki, R.; Kostecki, J.; Szczurek, M.; Ahad, I. U.; Fok, T.; Szczurek, A.; Wȩgrzyński, Ł.

In the paper we present new applications of laser plasma sources of soft X-rays and extreme ultraviolet (EUV) in various areas of plasma physics, nanotechnology and biomedical engineering. The sources are based on a gas puff target irradiated with nanosecond laser pulses from commercial Nd: YAG lasers, generating pulses with time duration from 1 to 10 ns and energies from 0.5 to 10 J at a 10 Hz repetition rate. The targets are produced with the use of a double valve system equipped with a special nozzle to form a double-stream gas puff target which allows for high conversion efficiency of laser energy into soft X-rays and EUV without degradation of the nozzle. The sources are equipped with various optical systems to collect soft X-ray and EUV radiation and form the radiation beam. New applications of these sources in imaging, including EUV tomography and soft X-ray microscopy, processing of materials and photoionization studies are presented.

Spectroscopic modeling for tungsten EUV spectra

International Nuclear Information System (INIS)

Murakami, Izumi; Kato, Daiji; Sakaue, Hiroyuki A.; Suzuki, Chihiro; Morita, Shigeru; Goto, Motoshi; Sasaki, Akira; Nakamura, Nobuyuki; Yamamoto, Norimasa; Koike, Fumihiro

2014-01-01

We have constructed an atomic model for tungsten extreme ultraviolet (EUV) spectra to reconstruct characteristic spectral feature of unresolved transition array (UTA) observed at 4-7 nm for tungsten ions. In the tungsten atomic modeling, we considered fine-structure levels with the quantum principal number n up to 6 as the atomic structure and calculated the electron-impact collision cross sections by relativistic distorted-wave method, using HULLAC atomic code. We measured tungsten EUV spectra in Large Helical Device (LHD) and Compact Electron Beam Ion Trap device (CoBIT) and compared them with the model calculation. The model successfully explain series of emission peaks at 1.5-3.5 nm as n=5-4 and 6-4 transitions of W"2"4"+ - W"3"2"+ measured in CoBIT and LHD and the charge state distributions were estimated for LHD plasma. The UTA feature observed at 4-7 nm was also successfully reconstructed with our model. The peak at ∼5 nm is produced mainly by many 4f-4d transition of W"2"2"+ - W"3"5"+ ions, and the second peak at ∼6 nm is produced by 4f-4d transition of W"2"5"+ - W"2"8"+ ions, and 4d-4p inner-shell transitions, 4p"54d"n"+"1 - 4p"64d"n, of W"2"9"+ - W"3"5"+ ions. These 4d-4p inner-shell transitions become strong since we included higher excited states such as 4p"54d"n4f state, which ADAS atomic data set does not include for spectroscopic modeling with fine structure levels. (author)

Determination of line profiles on nano-structured surfaces using EUV and x-ray scattering

Science.gov (United States)

Soltwisch, Victor; Wernecke, Jan; Haase, Anton; Probst, Jürgen; Schoengen, Max; Krumrey, Michael; Scholze, Frank; Pomplun, Jan; Burger, Sven

2014-09-01

Non-imaging techniques like X-ray scattering are supposed to play an important role in the further development of CD metrology for the semiconductor industry. Grazing Incidence Small Angle X-ray Scattering (GISAXS) provides directly assessable information on structure roughness and long-range periodic perturbations. The disadvantage of the method is the large footprint of the X-ray beam on the sample due to the extremely shallow angle of incidence. This can be overcome by using wavelengths in the extreme ultraviolet (EUV) spectral range, EUV small angle scattering (EUVSAS), which allows for much steeper angles of incidence but preserves the range of momentum transfer that can be observed. Generally, the potentially higher momentum transfer at shorter wavelengths is counterbalanced by decreasing diffraction efficiency. This results in a practical limit of about 10 nm pitch for which it is possible to observe at least the +/- 1st diffraction orders with reasonable efficiency. At the Physikalisch-Technische Bundesanstalt (PTB), the available photon energy range extends from 50 eV up to 10 keV at two adjacent beamlines. PTB commissioned a new versatile Ellipso-Scatterometer which is capable of measuring 6" square substrates in a clean, hydrocarbon-free environment with full flexibility regarding the direction of the incident light polarization. The reconstruction of line profiles using a geometrical model with six free parameters, based on a finite element method (FEM) Maxwell solver and a particle swarm based least-squares optimization yielded consistent results for EUV-SAS and GISAXS. In this contribution we present scatterometry data for line gratings and consistent reconstruction results of the line geometry for EUV-SAS and GISAXS.

The prevalence effect in lateral masking and its relevance for visual search.

Science.gov (United States)

Geelen, B P; Wertheim, A H

2015-04-01

In stimulus displays with or without a single target amid 1,644 identical distractors, target prevalence was varied between 20, 50 and 80 %. Maximum gaze deviation was measured to determine the strength of lateral masking in these arrays. The results show that lateral masking was strongest in the 20 % prevalence condition, which differed significantly from both the 50 and 80 % prevalence conditions. No difference was observed between the latter two. This pattern of results corresponds to that found in the literature on the prevalence effect in visual search (stronger lateral masking corresponding to longer search times). The data add to similar findings reported earlier (Wertheim et al. in Exp Brain Res, 170:387-402, 2006), according to which the effects of many well-known factors in visual search correspond to those on lateral masking. These were the effects of set size, disjunctions versus conjunctions, display area, distractor density, the asymmetry effect (Q vs. O's) and viewing distance. The present data, taken together with those earlier findings, may lend credit to a causal hypothesis that lateral masking could be a more important mechanism in visual search than usually assumed.

Observations and predictions of EUV emission from classical novae

International Nuclear Information System (INIS)

Starrfield, S.; Truran, J.W.; Sparks, W.M.; Krautter, J.

1989-01-01

Theoretical modeling of novae in outburst predicts that they should be active emitters of radiation both in the EUV and soft X-ray wavelengths twice during the outburst. The first time is very early in the outburst when only an all sky survey can detect them. This period lasts only a few hours. They again become bright EUV and soft X-ray emitters late in the outburst when the remnant object becomes very hot and is still luminous. The predictions imply both that a nova can remain very hot for months to years and that the peak temperature at this time strongly depends upon the mass of the white dwarf. It is important to observe novae at these late times because a measurement of both the flux and temperature can provide information about the mass of the white dwarf, the tun-off time scale, and the energy budget of the outburst. We review the existing observations of novae in late stages of their outburst and present some newly obtained data for GQ Mus 1983. We then provide results of new hydrodynamic simulations of novae in outburst and compare the predictions to the observations. 43 refs., 6 figs

Gestalt grouping and common onset masking.

Science.gov (United States)

Kahan, Todd A; Mathis, Katherine M

2002-11-01

A four-dot mask that surrounds and is presented simultaneously with a briefly presented target will reduce a person's ability to identity that target if the mask persists beyond target offset and attention is divided (Enns & Di Lollo, 1997, 2000). This masking effect, referred to as common onset masking, reflects reentrant processing in the visual system and can best be explained with a theory of object substitution (Di Lollo, Enns, & Rensink, 2000). In the present experiments, we investigated whether Gestalt grouping variables would influence the strength of common onset masking. The results indicated that (1) masking was impervious to grouping by form, similarity of color, position, luminance polarity, and common region and (2) masking increased with the number of elements in the masking display.

Study of crystalline thin films and nanofibers by means of the laser–plasma EUV-source based microscopy

International Nuclear Information System (INIS)

Wachulak, P.W.; Bartnik, A.; Baranowska-Korczyc, A.; Pánek, D.; Brůža, P.; Kostecki, J.; Węgrzyński, Ł.; Jarocki, R.; Szczurek, M.; Fronc, K.; Elbaum, D.; Fiedorowicz, H.

2013-01-01

New developments in nanoscience and nanotechnology require nanometer scale resolution imaging tools and techniques such as an extreme ultraviolet (EUV) and soft X-ray (SXR) microscopy, based on Fresnel zone plates. In this paper, we report on applications of a desk-top microscopy using a laser-plasma EUV source based on a gas-puff target for studies of morphology of thin silicon membranes coated with NaCl crystals and samples composed of ZnO nanofibers

EUV soft X-ray characterization of a FEL multilayer optics damaged by multiple shot laser beam

International Nuclear Information System (INIS)

Giglia, A.; Mahne, N.; Bianco, A.; Svetina, C.; Nannarone, S.

2011-01-01

We have investigated the damaging effects of a femtosecond pulsed laser beam with 400 nm wavelength on a Mo/Si EUV multilayer. The exposures have been done in vacuum with multiple pulses (5 pulses/mm 2 ) of 120 fs varying the laser fluence in the 38-195 mJ/cm 2 range. The analysis of the different irradiated regions has been performed ex-situ by means of different techniques, including specular and diffuse reflectivity, X-ray photoemission spectroscopy (XPS) and total electron yield (TEY) in the EUV and soft X-ray range. Surface images have been acquired by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results clearly indicate a progressive degradation of the EUV multilayer performances with the increase of the laser fluence. Spectroscopic analysis allowed to correlate the decrease of reflectivity with the degradation of the multilayer stacking, ascribed to Mo-Si intermixing at the Mo/Si interfaces of the first layers, close to the surface of the mirror.

A serendipitous observation of the gamma-ray burst GRB 921013b field with EUVE

DEFF Research Database (Denmark)

Castro-Tirado, A.J.; Gorosabel, J.; Bowyer, S.

1999-01-01

hours after the burst is 1.8 x10(-16) erg s(-1) cm(-2) after correction for absorption by the Galactic interstellar medium. Even if we exclude an intrinsic absorption, this is well below the detection limit of the EUVE measurement. Although it is widely accepted that gamma-ray bursts are at cosmological......We report a serendipitous extreme ultraviolet observation by EUVE of the field containing GRB 921013b, similar to 11 hours after its occurrence. This burst was detected on 1992 October 13 by the WATCH and PHEBUS on Granat, and by the GRB experiment on Ulysses. The lack of any transient (or...

Analysis of Ozone (O₃ and Erythemal UV (EUV measured by TOMS in the equatorial African belt

Directory of Open Access Journals (Sweden)

Øyvind Frette

2010-03-01

Full Text Available We presented time series of total ozone column amounts (TOCAs and erythemal UV (EUV doses derived from measurements by TOMS (Total Ozone Mapping Spectrometer instruments on board the Nimbus-7 (N7 and the Earth Probe (EP satellites for three locations within the equatorial African belt for the period 1979 to 2000. The locations were Dar-es-Salaam (6.8° S, 39.26° E in Tanzania, Kampala (0.19° N, 32.34° E in Uganda, and Serrekunda (13.28° N, 16.34° W in Gambia. Equatorial Africa has high levels of UV radiation, and because ozone shields UV radiation from reaching the Earth’s surface, there is a need to monitor TOCAs and EUV doses. In this paper we investigated the trend of TOCAs and EUV doses, the effects of annual and solar cycles on TOCAs, as well as the link between lightning and ozone production in the equatorial African belt. We also compared clear-sky simulated EUV doses with the corresponding EUV doses derived from TOMS measurements. The TOCAs were found to vary in the ranges 243 DU − 289 DU, 231 DU − 286 DU, and 236 DU − 296 DU, with mean values of 266.9 DU, 260.9 DU, and 267.8 DU for Dar-es-Salaam, Kampala and Serrekunda, respectively. Daily TOCA time series indicated that Kampala had the lowest TOCA values, which we attributed to the altitude effect. There were two annual ozone peaks in Dar-es-Salaam and Kampala, and one annual ozone peak in Serrekunda. The yearly TOCA averages showed an oscillation within a five-year period. We also found that the EUV doses were stable at all three locations for the period 1979−2000, and that Kampala and Dar-es-Salaam were mostly cloudy throughout the year, whereas Serrekunda was mostly free from clouds. It was also found that clouds were among the major factors determining the level of EUV reaching the Earth´s surface. Finally, we noted that during rainy seasons, horizontal advection effects augmented by lightning activity may be responsible for enhanced ozone production in the tropics.

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

International Nuclear Information System (INIS)

Li Yi-Gui; Yang Chun-Sheng; Liu Jing-Quan; Sugiyama Susumu

2011-01-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm 2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost. (cross-disciplinary physics and related areas of science and technology)

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

Science.gov (United States)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Mechanical alignment of substrates to a mask

Science.gov (United States)

Webb, Aaron P.; Carlson, Charles T.; Honan, Michael; Amato, Luigi G.; Grant, Christopher Neil; Strassner, James D.

2016-11-08

A plurality of masks is attached to the underside of a mask frame. This attachment is made such that each mask can independently move relative to the mask frame in three directions. This relative movement allows each mask to adjust its position to align with respective alignment pins disposed on a working surface. In one embodiment, each mask is attached to the mask frame using fasteners, where the fasteners have a shaft with a diameter smaller than the diameter of the mounting hole disposed on the mask. A bias element may be used to allow relative movement between the mask and the mask frame in the vertical direction. Each mask may also have kinematic features to mate with the respective alignment pins on the working surface.

Comparison of Ventilation With One-Handed Mask Seal With an Intraoral Mask Versus Conventional Cuffed Face Mask in a Cadaver Model: A Randomized Crossover Trial.

Science.gov (United States)

Amack, Andrew J; Barber, Gary A; Ng, Patrick C; Smith, Thomas B; April, Michael D

2017-01-01

We compare received minute volume with an intraoral mask versus conventional cuffed face mask among medics obtaining a 1-handed mask seal on a cadaver model. This study comprised a randomized crossover trial of adult US Army combat medic volunteers participating in a cadaver laboratory as part of their training. We randomized participants to obtain a 1-handed mask seal during ventilation of a fresh unembalmed cadaver, first using either an intraoral airway device or conventional cuffed face mask. Participants obtained a 1-handed mask seal while a ventilator delivered 10 standardized 750-mL breaths during 1 minute. After a 5-minute rest period, they repeated the study with the alternative mask. The primary outcome measure was received minute volume as measured by a respirometer. Of 27 recruited participants, all completed the study. Median received minute volume was higher with the intraoral mask compared with conventional cuffed mask by 1.7 L (95% confidence interval 1.0 to 1.9 L; Pcadaver model. The intraoral mask may prove a useful airway adjunct for ventilation. Copyright © 2016 American College of Emergency Physicians. Published by Elsevier Inc. All rights reserved.

Large-scale double-patterning compliant layouts for DP engine and design rule development

Science.gov (United States)

Cork, Christopher; Lucas, Kevin; Hapli, John; Raffard, Herve; Barnes, Levi

2009-03-01

Double Patterning is seen as the prime technology to keep Moore's law on path while EUV technology is still maturing into production worthiness. As previously seen for alternating-Phase Shift Mask technology[1], layout compliance of double patterning is not trivial [2,3] and blind shrinks of anything but the most simplistic existing layouts, will not be directly suitable for double patterning. Evaluating a production worthy double patterning engine with highly non-compliant layouts would put unrealistic expectations on that engine and provide metrics with poor applicability for eventual large designs. The true production use-case would be for designs that have at least some significant double patterning compliance already enforced at the design stage. With this in mind a set of ASIC design blocks of different sizes and complexities were created that were double patterning compliant. To achieve this, a set of standard cells were generated, which individually and in isolation were double patterning compliant, for multiple layers simultaneously. This was done using the automated Standard Cell creation tool CadabraTM [4]. To create a full ASIC, however, additional constraints were added to make sure compliance would not be broken across the boundaries between standard cells when placed next to each other [5]. These standard cells were then used to create a variety of double patterning compliant ASICs using iCCompilerTM to place the cells correctly. Now with a compliant layout, checks were made to see if the constraints made at the micro level really do ensure a fully compliant layout on the whole chip and if the coloring engine could cope with such large datasets. A production worthy double patterning engine is ideally distributable over multiple processors [6,7] so that fast turn-around time can be achievable on even the largest designs. We demonstrate the degree of linearity of scaling achievable with our double patterning engine. These results can be understood

Through-mask anodization of titania dot- and pillar-like nanostructures on bulk Ti substrates using a nanoporous anodic alumina mask

International Nuclear Information System (INIS)

Sjoestroem, Terje; Su Bo; Fox, Neil

2009-01-01

Nanosized surface topography on an implant material has the capability of stimulating the acceptance of the material in its host surrounding. Fine-tuning of nanotopography feature size has been shown to trigger differentiation of mesenchymal stem cells into bone cells in vitro. For this purpose we have created well defined nanosized titania dot- and pillar-like structures on mechanically polished Ti substrates using a through-mask anodization technique with an anodic porous alumina template. The anodization technique allowed the titania structure dimensions to be precisely tuned in the range 15-140 nm in a single electrolyte system. The fabricated surfaces serve as good model surfaces for precise studies of in vitro cell behaviour. The through-mask anodization technique was used directly on bulk Ti surfaces, thus demonstrating a potential application for patterning of actual Ti implant surfaces.

Ensuring Confidentiality of Geocoded Health Data: Assessing Geographic Masking Strategies for Individual-Level Data.

Science.gov (United States)

Zandbergen, Paul A

2014-01-01

Public health datasets increasingly use geographic identifiers such as an individual's address. Geocoding these addresses often provides new insights since it becomes possible to examine spatial patterns and associations. Address information is typically considered confidential and is therefore not released or shared with others. Publishing maps with the locations of individuals, however, may also breach confidentiality since addresses and associated identities can be discovered through reverse geocoding. One commonly used technique to protect confidentiality when releasing individual-level geocoded data is geographic masking. This typically consists of applying a certain amount of random perturbation in a systematic manner to reduce the risk of reidentification. A number of geographic masking techniques have been developed as well as methods to quantity the risk of reidentification associated with a particular masking method. This paper presents a review of the current state-of-the-art in geographic masking, summarizing the various methods and their strengths and weaknesses. Despite recent progress, no universally accepted or endorsed geographic masking technique has emerged. Researchers on the other hand are publishing maps using geographic masking of confidential locations. Any researcher publishing such maps is advised to become familiar with the different masking techniques available and their associated reidentification risks.

Ensuring Confidentiality of Geocoded Health Data: Assessing Geographic Masking Strategies for Individual-Level Data

Directory of Open Access Journals (Sweden)

Paul A. Zandbergen

2014-01-01

Full Text Available Public health datasets increasingly use geographic identifiers such as an individual’s address. Geocoding these addresses often provides new insights since it becomes possible to examine spatial patterns and associations. Address information is typically considered confidential and is therefore not released or shared with others. Publishing maps with the locations of individuals, however, may also breach confidentiality since addresses and associated identities can be discovered through reverse geocoding. One commonly used technique to protect confidentiality when releasing individual-level geocoded data is geographic masking. This typically consists of applying a certain amount of random perturbation in a systematic manner to reduce the risk of reidentification. A number of geographic masking techniques have been developed as well as methods to quantity the risk of reidentification associated with a particular masking method. This paper presents a review of the current state-of-the-art in geographic masking, summarizing the various methods and their strengths and weaknesses. Despite recent progress, no universally accepted or endorsed geographic masking technique has emerged. Researchers on the other hand are publishing maps using geographic masking of confidential locations. Any researcher publishing such maps is advised to become familiar with the different masking techniques available and their associated reidentification risks.

Mask quality assessment

Science.gov (United States)

Regis, Larry; Paulson, Neil; Reynolds, James A.

1994-02-01

Product quality and timely delivery are two of the most important parameters, determining the success of a mask manufacturing facility. Because of the sensitivity of this data, however, very little is known about industry performance in these areas. Using Arthur Andersen & Co. to protect contributor identity, the authors have conducted a blind quality survey of mask shops which represents over 75% of the total merchant and captive mask volume in the US. Quantities such as return rate, plate survival yield, performance to schedule and reason for return were requested from 1988 through Q2 1993. Data is analyzed and conclusions are presented.

Attenuated phase-shift mask (PSM) blanks for flat panel display

Science.gov (United States)

Kageyama, Kagehiro; Mochizuki, Satoru; Yamakawa, Hiroyuki; Uchida, Shigeru

2015-10-01

The fine pattern exposure techniques are required for Flat Panel display applications as smart phone, tablet PC recently. The attenuated phase shift masks (PSM) are being used for ArF and KrF photomask lithography technique for high end pattern Semiconductor applications. We developed CrOx based large size PSM blanks that has good uniformity on optical characteristics for FPD applications. We report the basic optical characteristics and uniformity, stability data of large sized CrOx PSM blanks.

An etching mask and a method to produce an etching mask

DEFF Research Database (Denmark)

2016-01-01

The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

Compact and Light-Weight Solar Spaceflight Instrument Designs Utilizing Newly Developed Miniature Free-Standing Zone Plates: EUV Radiometer and Limb-Scanning Monochromator

Science.gov (United States)

Seely, J. F.; McMullin, D. R.; Bremer, J.; Chang, C.; Sakdinawat, A.; Jones, A. R.; Vest, R.

2014-12-01

Two solar instrument designs are presented that utilize newly developed miniature free-standing zone plates having interconnected Au opaque bars and no support membrane resulting in excellent long-term stability in space. Both instruments are based on a zone plate having 4 mm outer diameter and 1 to 2 degree field of view. The zone plate collects EUV radiation and focuses a narrow bandpass through a pinhole aperture and onto a silicon photodiode detector. As a miniature radiometer, EUV irradiance is accurately determined from the zone plate efficiency and the photodiode responsivity that are calibrated at the NIST SURF synchrotron facility. The EUV radiometer is pointed to the Sun and measures the absolute solar EUV irradiance in high time cadence suitable for solar physics and space weather applications. As a limb-scanning instrument in low earth orbit, a miniature zone-plate monochromator measures the extinction of solar EUV radiation by scattering through the upper atmosphere which is a measure of the variability of the ionosphere. Both instruments are compact and light-weight and are attractive for CubeSats and other missions where resources are extremely limited.

Enhanced performance of an EUV light source (λ = 84 nm) using short-pulse excitation of a windowless dielectric barrier discharge in neon

International Nuclear Information System (INIS)

Carman, R J; Kane, D M; Ward, B K

2010-01-01

The electrical and optical characteristics of a dielectric barrier discharge (DBD) based neon excimer lamp generating output in the extreme ultraviolet (EUV) spectral range (λ = 84 nm) have been investigated experimentally. We report a detailed comparison of lamp performance for both pulsed and sinusoidal voltage excitation waveforms, using otherwise identical operating conditions. The results show that pulsed voltage excitation yields a ∼50% increase in the overall electrical to EUV conversion efficiency compared with sinusoidal waveforms, when operating in the pressure range 500-900 mbar. Pulsed operation allows greater control of parameters associated with the temporal evolution of the EUV pulse shapes (risetime, instantaneous peak power). The Ne DBD based source is also found to be highly monochromatic with respect to its spectral output from the second continuum band at λ ∼ 84 nm (5 nm FWHM). This continuum band dominates the spectral emission over the wavelength range 30-550 nm. Lamp performance; as measured by the overall EUV output energy, electrical to EUV conversion efficiency and spectral purity at λ ∼ 84 nm; improves with increasing gas pressure up to p = 900 mbar.

Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 μm

Science.gov (United States)

Ohnuma, Hidetoshi; Kawahira, Hiroichi

1998-09-01

An automatic alternative phase shift mask (PSM) pattern layout tool has been newly developed. This tool is dedicated for embedded DRAM in logic device to shrink gate line width with improving line width controllability in lithography process with a design rule below 0.18 micrometers by the KrF excimer laser exposure. The tool can crete Levenson type PSM used being coupled with a binary mask adopting a double exposure method for positive photo resist. By using graphs, this tool automatically creates alternative PSM patterns. Moreover, it does not give any phase conflicts. By adopting it to actual embedded DRAM in logic cells, we have provided 0.16 micrometers gate resist patterns at both random logic and DRAM areas. The patterns were fabricated using two masks with the double exposure method. Gate line width has been well controlled under a practical exposure-focus window.

Rocket flight of a multilayer coated high-density EUV toroidal grating

Science.gov (United States)

Keski-Kuha, Ritva A. M.; Thomas, Roger J.; Davila, Joseph M.

1992-01-01

A multilayer coated high density toroidal grating was flown on a sounding rocket experiment in the Solar EUV Rocket Telescope and Spectrograph (SERTS) instrument. To our knowledge this is the first space flight of a multilayer coated grating. Pre-flight performance evaluation showed that the application of a 10-layer Ir/Si multilayer coating to the 3600 l/mm blazed toroidal replica grating produced a factor of 9 enhancement in peak efficiency near the design wavelength around 30 nm in first order over the standard gold coating, with a measured EUV efficiency that peaked at 3.3 percent. In addition, the grating's spectral resolution of better than 5000 was maintained. The region of enhanced grating efficiency due to the multilayer coating is clearly evident in the flight data. Within the bandpass of the multilayer coating, the recorded film densities were roughly equivalent to those obtained with a factor of six longer exposure on the previous flight of the SERTS instrument.

Embedded top-coat for reducing the effect out of band radiation in EUV lithography

Science.gov (United States)

Du, Ke; Siauw, Meiliana; Valade, David; Jasieniak, Marek; Voelcker, Nico; Trefonas, Peter; Thackeray, Jim; Blakey, Idriss; Whittaker, Andrew

2017-03-01

Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure

Mask_explorer: A tool for exploring brain masks in fMRI group analysis.

Science.gov (United States)

Gajdoš, Martin; Mikl, Michal; Mareček, Radek

2016-10-01

Functional magnetic resonance imaging (fMRI) studies of the human brain are appearing in increasing numbers, providing interesting information about this complex system. Unique information about healthy and diseased brains is inferred using many types of experiments and analyses. In order to obtain reliable information, it is necessary to conduct consistent experiments with large samples of subjects and to involve statistical methods to confirm or reject any tested hypotheses. Group analysis is performed for all voxels within a group mask, i.e. a common space where all of the involved subjects contribute information. To our knowledge, a user-friendly interface with the ability to visualize subject-specific details in a common analysis space did not yet exist. The purpose of our work is to develop and present such interface. Several pitfalls have to be avoided while preparing fMRI data for group analysis. One such pitfall is spurious non-detection, caused by inferring conclusions in the volume of a group mask that has been corrupted due to a preprocessing failure. We describe a MATLAB toolbox, called the mask_explorer, designed for prevention of this pitfall. The mask_explorer uses a graphical user interface, enables a user-friendly exploration of subject masks and is freely available. It is able to compute subject masks from raw data and create lists of subjects with potentially problematic data. It runs under MATLAB with the widely used SPM toolbox. Moreover, we present several practical examples where the mask_explorer is usefully applied. The mask_explorer is designed to quickly control the quality of the group fMRI analysis volume and to identify specific failures related to preprocessing steps and acquisition. It helps researchers detect subjects with potentially problematic data and consequently enables inspection of the data. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

EUV emission stimulated by use of dual laser pulses from continus liquid microjet targets

Science.gov (United States)

Higashiguchi, Takeshi; Rajyaguru, Chirag; Sasaki, Wataru; Kubodera, Shoichi

2004-11-01

A continuous water-jet or water-jet mixed with LiF with several tens μm diameter was formed in a vacuum chamber through a small capillary nozzle. Usage of two laser pulses is an efficient way to produce EUV emission, since a density and temperature of a plasma formed by the first laser pulse are regulated by the second laser pulse. By adjusting the delay of the second pulse, one could maximize the EUV emission. A subpicosecond Ti:Sapphire laser at a wavelength of 800 nm produced a maximum energy around 30 mJ. The beam was divided by a Michelson interferometer, which produced two laser pulses with energies of 5 mJ. The pulse duration was adjusted around 300 fs (FWHM). Both beams were focused on a micro-jet using a lens with a focal length of 15 cm. The delay time between the two pulses was varied from 100 to 800 ps by use of an optical delay line. Clear enhancement of the EUV emission yield was observed when the delay between the two pulses was around 500 ps. The experimentally observed delay agrees reasonably well with that of a plasma to expand to its critical density of 10^21 cm-3.

Simultaneous pure-tone masking : the dependence of masking asymmetries on intensity

NARCIS (Netherlands)

Vogten, L.L.M.

1978-01-01

Phase locking between probe and masker was used in a series of pure-tone masking experiments. The masker was a stationary sine wave of variable frequency; the probe a fixed-frequency tone burst. We have observed that for small frequency separation the masking behaves asymmetrically around the probe

Development of a fully automated adaptive unsharp masking technique in digital chest radiograph

International Nuclear Information System (INIS)

Abe, Katsumi; Katsuragawa, Shigehiko; Sasaki, Yasuo

1991-01-01

We are developing a fully automated adaptive unsharp masking technique with various parameters depending on regional image features of a digital chest radiograph. A chest radiograph includes various regions such as lung fields, retrocardiac area and spine in which their texture patterns and optical densities are extremely different. Therefore, it is necessary to enhance image contrast of each region by each optimum parameter. First, we investigated optimum weighting factors and mask sizes of unsharp masking technique in a digital chest radiograph. Then, a chest radiograph is automatically divided into three segments, one for the lung field, one for the retrocardiac area, and one for the spine, by using histogram analysis of pixel values. Finally, high frequency components of the lung field and retrocardiac area are selectively enhanced with a small mask size and mild weighting factors which are previously determined as optimum parameters. In addition, low frequency components of the spine are enhanced with a large mask size and adequate weighting factors. This processed image shows excellent depiction of the lung field, retrocardiac area and spine simultaneously with optimum contrast. Our image processing technique may be useful for diagnosis of chest radiographs. (author)

Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs

Science.gov (United States)

Keens, Simon; Rossa, Bernhard; Frei, Marcel

2016-03-01

As the semiconductor industry proceeds to develop ever better sources of extreme ultraviolet (EUV) light for photolithography applications, two distinct technologies have come to prominence: Tin-plasma and free electron laser (FEL) sources. Tin plasma sources have been in development within the industry for many years, and have been widely reported. Meanwhile, FELs represent the most promising alternative to create high power EUV frequencies and, while tin-plasma source development has been ongoing, such lasers have been continuously developed by academic institutions for use in fundamental research programmes in conjunction with universities and national scientific institutions. This paper follows developments in the field of academic FELs, and presents information regarding novel technologies, specifically in the area of RF design strategy, that may be incorporated into future industrial FEL systems for EUV lithography in order to minimize the necessary investment and operational costs. It goes on to try to assess the cost-benefit of an alternate RF design strategy, based upon previous studies.

High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

International Nuclear Information System (INIS)

Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

2007-01-01

Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

The EUV-observatory TESIS on board Coronas-Photon: scientific goals and initial plan of observations

Science.gov (United States)

Bogachev, Sergey

The TESIS a EUV-observatory for solar research from space will be launched in 2008 September on board the satellite Coronas-Photon from cosmodrome Plesetsk. TESIS is a project of Lebedev Physical Institute of Russian Academy of Science with contribution from Space Research Center of Polish Academy of Science (the spectrometer SphinX). The experiment will focus on quasi-monochromatic imaging of the Sun and XUV spectroscopy of solar plasma. The scientific payload of TESIS contains five instruments: (1) Bragg crystal spectroheliometer for Sun monochromatic imaging in the line MgXII 8.42 A, (2) the normal-incidence Herschelian EUV telescopes with a resolution of 1.7 arc sec operated in lines FeXXII 133 A, FeIX 171 A and HeII 304 A, (3) the EUV imaging spectrometer, (4) the wide-field Ritchey-Chretien coronograph and (5) the X-ray spectrometer SphinX. The TESIS will focus on coordinated study of solar activity from the transition region to the outer corona up to 4 solar radii in wide temperature range from 5*104 to 2*107 K. We describe the scientific goals of the TESIS and its initial plan of observations.

Broadband transmission grating spectrometer for measuring the emission spectrum of EUV sources

NARCIS (Netherlands)

Bayraktar, Muharrem; Bastiaens, Hubertus M.J.; Bruineman, Caspar; Vratzov, Boris; Bijkerk, Frederik

2016-01-01

Extreme ultraviolet (EUV) light sources and their optimization for emission within a narrow wavelength band are essential in applications such as photolithography. Most light sources however also emit radiation outside this wavelength band and have a spectrum extending up to deep ultraviolet (DUV)

Masked Photocathode for Photoinjector

International Nuclear Information System (INIS)

Qiang, Ji

2010-01-01

In this research note, we propose a scheme to insert a photocathode inside a photoinjector for generating high brightness electron beam. Instead of mounting the photocathode onto the electrode, a masked electrode with small hole is used to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material very simple by rotating the photocathode behind the mask into the hole. This will significantly increase the usage lifetime of a photocathode. Furthermore, this also helps reduce the dark current or secondary electron emission from the photocathode. The hole on the mask also provides a transverse cut-off to the Gaussian laser profile which can be beneficial from the beam dynamics point of view.

Modeling off-frequency binaural masking for short- and long-duration signals.

Science.gov (United States)

Nitschmann, Marc; Yasin, Ifat; Henning, G Bruce; Verhey, Jesko L

2017-08-01

Experimental binaural masking-pattern data are presented together with model simulations for 12- and 600-ms signals. The masker was a diotic 11-Hz wide noise centered on 500 Hz. The tonal signal was presented either diotically or dichotically (180° interaural phase difference) with frequencies ranging from 400 to 600 Hz. The results and the modeling agree with previous data and hypotheses; simulations with a binaural model sensitive to monaural modulation cues show that the effect of duration on off-frequency binaural masking-level differences is mainly a result of modulation cues which are only available in the monaural detection of long signals.

Design of Data Masking Architecture and Analysis of Data Masking Techniques for Testing

OpenAIRE

Ravikumar G K,; Manjunath T. N,; Ravindra S. Hegadi,; Archana.R.A

2011-01-01

Data masking is the process of obscuring-masking, specific data elements within data stores. It ensures that sensitive data is replaced with realistic but not real data. The goal is that sensitive customer information is not available outside of the authorized environment. Data masking is typically done while provisioning nonproduction environments so that copies created to support test and development processes are not exposing sensitive information and thus avoiding risks of leaking. Maskin...

Mask ventilation with two different face masks in the delivery room for preterm infants: a randomized controlled trial.

Science.gov (United States)

Cheung, D; Mian, Q; Cheung, P-Y; O'Reilly, M; Aziz, K; van Os, S; Pichler, G; Schmölzer, G M

2015-07-01

If an infant fails to initiate spontaneous breathing after birth, international guidelines recommend a positive pressure ventilation (PPV). However, PPV by face mask is frequently inadequate because of leak between the face and mask. Despite a variety of available face masks, none have been prospectively compared in a randomized fashion. We aimed to evaluate and compare leak between two commercially available round face masks (Fisher & Paykel (F&P) and Laerdal) in preterm infants mask PPV in the delivery room routinely had a flow sensor placed between the mask and T-piece resuscitator. Infants were randomly assigned to receive PPV with either a F&P or Laerdal face mask. All resuscitators were trained in the use of both face masks. We compared mask leak, airway pressures, tidal volume and ventilation rate between the two groups. Fifty-six preterm infants (n=28 in each group) were enrolled; mean±s.d. gestational age 28±3 weeks; birth weight 1210±448 g; and 30 (52%) were male. Apgar scores at 1 and 5 min were 5±3 and 7±2, respectively. Infants randomized to the F&P face mask and Laerdal face mask had similar mask leak (30 (25-38) versus 35 (24-46)%, median (interquartile range), respectively, P=0.40) and tidal volume (7.1 (4.9-8.9) versus 6.6 (5.2-8.9) ml kg(-1), P=0.69) during PPV. There were no significant differences in ventilation rate, inflation time or airway pressures between groups. The use of either face mask during PPV in the delivery room yields similar mask leak in preterm infants <33 weeks gestational age.

Uses of microchannel plate intensified detectors for imaging applications in the X-ray, EUV and visible wavelength regions

International Nuclear Information System (INIS)

Read, P.D.; Carter, M.K.; Pike, C.D.; Harrison, R.A.; Kent, B.J.; Swinyard, B.M.; Patchett, B.E.; Redfern, R.M.; Shearer, A.; Colhoun, M.

1997-01-01

The Rutherford Appleton laboratory photon counting detector (RALPCD) has been refined to meet project requirements for a flexible imaging arrangement with applications at X-ray, EUV and visible wavelengths. The basic detector design comprises commercially available high gain microchannel plate intensifiers fibre optically coupled to CID or CCD cameras, to form a modular detector arrangement with the appropriate RAL detection and centroiding software. Frames of data from the cameras are detected and centroided in a transputer or C40 parallel processor array where correction algorithms use look up tables to produce pattern free images at high resolution. Data from completed applications are used to illustrate the performance and future advances are discussed. (orig.)

Self-Rescue Mask Training

CERN Multimedia

2013-01-01

Nine new self-rescue mask instructors have been trained since early 2013, which provides CERN with a total of 26 self-rescue mask instructors to date. This will allow us to meet the increasing training needs caused by the Long Shut Down LS1.   The self-rescue mask instructors have trained 1650 persons in 2012 and about 500 persons since the beginning of the year on how to wear the masks properly. We thank all the instructors and all the persons that made this training possible. Please remember that the self-rescue masks training sessions are scheduled as follows: Basic course: Tuesday and Thursday mornings (2 sessions – 8.30 AM and 10.30 AM), duration:  1.30 hour, in French and English – registration via CERN online training catalogue – Course code 077Y00. Refresher training : Monday mornings (2 sessions – 8.30 AM and 10.30 AM), duration: 1.30 hour , in French and English – registration via CERN online training catalogue &...

Development and test of model apparatus of non-contact spin processor for photo mask production applying radial-type superconducting magnetic bearing

International Nuclear Information System (INIS)

Saito, Kimiyo; Fukui, Satoshi; Maezawa, Masaru; Ogawa, Jun; Oka, Tetsuo; Sato, Takao

2013-01-01

Highlights: ► We develop test spinner for non-contact spinning process in photo mask production. ► This test spinner shows improved spinning ability compared with our previous one. ► Large vertical movement of turn table still occurs during acceleration. ► Method to control vertical movement of turn table should be developed in next step. -- Abstract: In semiconductor devices, miniaturization of circuit patterning on wafers is required for higher integrations of circuit elements. Therefore, very high tolerance and quality are also required for patterning of microstructures of photo masks. The deposition of particulate dusts generated from mechanical bearings of the spin processor in the patterns of the photo mask is one of main causes of the deterioration of pattern preciseness. In our R and D, application of magnetic bearing utilizing bulk high temperature superconductors to the spin processors has been proposed. In this study, we develop a test spinner for the non-contact spinning process in the photo mask production system. The rotation test by using this test spinner shows that this test spinner accomplishes the improvement of the spinning ability compared with the test spinner developed in our previous study. This paper describes the rotation test results of the new test spinner applying the magnetic bearing with bulk high temperature superconductors

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

2016-08-01

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

Inner shell transitions of BrI in the EUV

Energy Technology Data Exchange (ETDEWEB)

Mazzoni, M [Florence Univ. (Italy). Ist. di Astronomia; Pettini, M [Osservatorio Astrofisico di Arcetri, Florence (Italy)

1981-10-12

The EUV line spectrum originating from transitions of the inner 3d shell of neutral atomic bromine has been observed in absorption. Fano parameters have been derived for the three autoionized resonances nd/sup 10/(n + 1)s/sup 2/(n + 1)p/sup 5/ /sup 2/P-nd/sup 9/(n + 1)s/sup 2/(n + 1)p/sup 62/D observed in both bromine (n = 3) and iodine (n = 4) spectra.

Immobilization of biomolecules onto surfaces according to ultraviolet light diffraction patterns

International Nuclear Information System (INIS)

Bjoern Petersen, Steffen; Kold di Gennaro, Ane; Neves-Petersen, Maria Teresa; Skovsen, Esben; Parracino, Antonietta

2010-01-01

We developed a method for immobilization of biomolecules onto thiol functionalized surfaces according to UV diffraction patterns. UV light-assisted molecular immobilization proceeds through the formation of free, reactive thiol groups that can bind covalently to thiol reactive surfaces. We demonstrate that, by shaping the pattern of the UV light used to induce molecular immobilization, one can control the pattern of immobilized molecules onto the surface. Using a single-aperture spatial mask, combined with the Fourier transforming property of a focusing lens, we show that submicrometer (0.7 μm) resolved patterns of immobilized prostate-specific antigen biomolecules can be created. If a dual-aperture spatial mask is used, the results differ from the expected Fourier transform pattern of the mask. It appears as a superposition of two diffraction patterns produced by the two apertures, with a fine structured interference pattern superimposed.

How do different brands of size 1 laryngeal mask airway compare with face mask ventilation in a dedicated laryngeal mask airway teaching manikin?

Science.gov (United States)

Tracy, Mark Brian; Priyadarshi, Archana; Goel, Dimple; Lowe, Krista; Huvanandana, Jacqueline; Hinder, Murray

2018-05-01

International neonatal resuscitation guidelines recommend the use of laryngeal mask airway (LMA) with newborn infants (≥34 weeks' gestation or >2 kg weight) when bag-mask ventilation (BMV) or tracheal intubation is unsuccessful. Previous publications do not allow broad LMA device comparison. To compare delivered ventilation of seven brands of size 1 LMA devices with two brands of face mask using self-inflating bag (SIB). 40 experienced neonatal staff provided inflation cycles using SIB with positive end expiratory pressure (PEEP) (5 cmH 2 O) to a specialised newborn/infant training manikin randomised for each LMA and face mask. All subjects received prior education in LMA insertion and BMV. 12 415 recorded inflations for LMAs and face masks were analysed. Leak detected was lowest with i-gel brand, with a mean of 5.7% compared with face mask (triangular 42.7, round 35.7) and other LMAs (45.5-65.4) (p<0.001). Peak inspiratory pressure was higher with i-gel, with a mean of 28.9 cmH 2 O compared with face mask (triangular 22.8, round 25.8) and other LMAs (14.3-22.0) (p<0.001). PEEP was higher with i-gel, with a mean of 5.1 cmH 2 O compared with face mask (triangular 3.0, round 3.6) and other LMAs (0.6-2.6) (p<0.001). In contrast to other LMAs examined, i-gel had no insertion failures and all users found i-gel easy to use. This study has shown dramatic performance differences in delivered ventilation, mask leak and ease of use among seven different brands of LMA tested in a manikin model. This coupled with no partial or complete insertion failures and ease of use suggests i-gel LMA may have an expanded role with newborn resuscitation as a primary resuscitation device. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2018. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

Combined mask and illumination scheme optimization for robust contact patterning on 45nm technology node flash memory devices

Science.gov (United States)

Vaglio Pret, Alessandro; Capetti, Gianfranco; Bollin, Maddalena; Cotti, Gina; De Simone, Danilo; Cantù, Pietro; Vaccaro, Alessandro; Soma, Laura

2008-03-01

Immersion Lithography is the most important technique for extending optical lithography's capabilities and meeting the requirements of Semiconductor Roadmap. The introduction of immersion tools has recently allowed the development of 45nm technology node in single exposure. Nevertheless the usage of hyper-high NA scanners (NA > 1), some levels still remain very critical to be imaged with sufficient process performances. For memory devices, contact mask is for sure the most challenging layer. Aim of this paper is to present the lithographic assessment of 193nm contact holes process, with k I value of ~0.30 using NA 1.20 immersion lithography (minimum pitch is 100nm). Different issues will be reported, related to mask choices (Binary or Attenuated Phase Shift) and illuminator configurations. First phase of the work will be dedicated to a preliminary experimental screening on a simple test case in order to reduce the variables in the following optimization sections. Based on this analysis we will discard X-Y symmetrical illuminators (Annular, C-Quad) due to poor contrast. Second phase will be dedicated to a full simulation assessment. Different illuminators will be compared, with both mask type and several mask biases. From this study, we will identify some general trends of lithography performances that can be used for the fine tuning of the RET settings. The last phase of the work will be dedicated to find the sensitivity trends for one of the analyzed illuminators. In particular we study the effect of Numerical Aperture, mask bias in both X and Y direction and poles sigma ring-width and centre.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Integral characteristics of spectra of ions important for EUV lithography

International Nuclear Information System (INIS)

Karazija, R; Kucas, S; Momkauskaite, A

2006-01-01

The emission spectrum corresponding to the 4p 5 4d N+1 + 4p 6 4d N-1 4f → 4p 6 4d N transition array is concentrated in a narrow interval of wavelengths. That is due to the existence of an approximate selection rule and quenching of some lines by configuration mixing. Thus such emission of elements near Z = 50 is considered to be the main candidate for the EUV lithography source at λ = 13.5 nm. In the present work the regularities of these transition arrays are considered using their integral characteristics: average energy, total line strength, variance and interval of array containing some part of the total transition probability. Calculations for various ions of elements In, Sn, Sb, Te, I and Xe have been performed in a two-configuration pseudorelativistic approximation, which describes fairly well the main features of the spectra. The variation in the values of the main integral characteristics of the spectra with atomic number and ionization degree gives the possibility of comparing quantitatively the suitability of the emission of various ions for EUV lithography

UNDERCOVER EUV SOLAR JETS OBSERVED BY THE INTERFACE REGION IMAGING SPECTROGRAPH

Energy Technology Data Exchange (ETDEWEB)

Chen, N.-H. [Korea Astronomy and Space Science Institute, Daejeon (Korea, Republic of); Innes, D. E. [Max-Planck-Institut für Sonnensystemforschung, D-37077 Göttingen (Germany)

2016-12-10

It is well-known that extreme ultraviolet (EUV) emission emitted at the solar surface is absorbed by overlying cool plasma. Especially in active regions, dark lanes in EUV images suggest that much of the surface activity is obscured. Simultaneous observations from the Interface Region Imaging Spectrograph, consisting of UV spectra and slit-jaw images (SJI), give vital information with sub-arcsecond spatial resolution on the dynamics of jets not seen in EUV images. We studied a series of small jets from recently formed bipole pairs beside the trailing spot of active region 11991, which occurred on 2014 March 5 from 15:02:21 UT to 17:04:07 UT. Collimated outflows with bright roots were present in SJI 1400 Å (transition region) and 2796 Å (upper chromosphere) that were mostly not seen in Atmospheric Imaging Assembly (AIA) 304 Å (transition region) and AIA 171 Å (lower corona) images. The Si iv spectra show a strong blue wing enhancement, but no red wing, in the line profiles of the ejecta for all recurrent jets, indicating outward flows without twists. We see two types of Mg ii line profiles produced by the jets spires: reversed and non-reversed. Mg ii lines remain optically thick, but turn optically thin in the highly Doppler shifted wings. The energy flux contained in each recurrent jet is estimated using a velocity differential emission measure technique that measures the emitting power of the plasma as a function of the line-of-sight velocity. We found that all the recurrent jets release similar energy (10{sup 8} erg cm{sup −2} s{sup −1}) toward the corona and the downward component is less than 3%.

Oral mask ventilation is more effective than face mask ventilation after nasal surgery.

Science.gov (United States)

Yazicioğlu, Dilek; Baran, Ilkay; Uzumcugil, Filiz; Ozturk, Ibrahim; Utebey, Gulten; Sayın, M Murat

2016-06-01

To evaluate and compare the face mask (FM) and oral mask (OM) ventilation techniques during anesthesia emergence regarding tidal volume, leak volume, and difficult mask ventilation (DMV) incidence. Prospective, randomized, crossover study. Operating room, training and research hospital. American Society of Anesthesiologists physical status I and II adult patients scheduled for nasal surgery. Patients in group FM-OM received FM ventilation first, followed by OM ventilation, and patients in group OM-FM received OM ventilation first, followed by FM ventilation, with spontaneous ventilation after deep extubation. The FM ventilation was applied with the 1-handed EC-clamp technique. The OM was placed only over the mouth, and the 1-handed EC-clamp technique was used again. A child's size FM was used for the OM ventilation technique, the mask was rotated, and the inferior part of the mask was placed toward the nose. The leak volume (MVleak), mean airway pressure (Pmean), and expired tidal volume (TVe) were assessed with each mask technique for 3 consecutive breaths. A mask ventilation grade ≥3 was considered DMV. DMV occurred more frequently during FM ventilation (75% with FM vs 8% with OM). In the FM-first sequence, the mean TVe was 249±61mL with the FM and 455±35mL with the OM (P=.0001), whereas in the OM-first sequence, it was 276±81mL with the FM and 409±37mL with the OM (P=.0001). Regardless of the order used, the OM technique significantly decreased the MVleak and increased the TVe when compared to the FM technique. During anesthesia emergence after nasal surgery the OM may offer an effective ventilation method as it decreases the incidence of DMV and the gas leak around the mask and provides higher tidal volume delivery compared with FM ventilation. Copyright © 2016 Elsevier Inc. All rights reserved.

Micro- and Nanoprocessing of Polymers Using a Laser Plasma Extreme Ultraviolet Source

International Nuclear Information System (INIS)

Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Kostecki, J.; Rakowski, R.; Szczurek, A.; Szczurek, M.

2010-01-01

Laser plasma with temperature of the order of tens eV can be an efficient source of extreme ultraviolet (EUV). The radiation can be focused using different kind of optics, giving sufficient fluence for some applications. In this work we present results of investigations concerning applications of a laser plasma EUV source based on a double stream gas puff target. The source was equipped with two different grazing incidence collectors. One of them was a multifoil collector, the second one was an axisymmetrical ellipsoidal collector. The multifoil mirror was used mainly in experiments concerning micromachining of organic polymers by direct photo-etching. The experiments were performed for different polymers that were irradiated through a fine metal grid as a contact mask. The smallest element of a pattern structure obtained in this way was 5 μm, while the structure height was 50 μm giving an aspect ratio about 10. The laser-plasma EUV source equipped with the axisymmetrical ellipsoidal collector was used for surface modification of organic polymers and inorganic solids. The surface morphology after irradiation was investigated. Different forms of micro- and nanostructures were obtained depending on material and irradiation conditions. (author)

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

Science.gov (United States)

Pack, Robert C.; Standiford, Keith; Lukanc, Todd; Ning, Guo Xiang; Verma, Piyush; Batarseh, Fadi; Chua, Gek Soon; Fujimura, Akira; Pang, Linyong

2014-10-01

A methodology is described wherein a calibrated model-based `Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

A very small and super strong zebra pattern burst at the beginning of a solar flare

Energy Technology Data Exchange (ETDEWEB)

Tan, Baolin; Tan, Chengming; Zhang, Yin; Huang, Jing; Yan, Yihua [Key Laboratory of Solar Activity, National Astronomical Observatories of Chinese Academy of Sciences, Beijing 100012 (China); Mészárosová, Hana; Karlický, Marian, E-mail: bltan@nao.cas.cn [Astronomical Institute of the Academy of Sciences of the Czech Republic, Ondřejov 15165 (Czech Republic)

2014-08-01

Microwave emission with spectral zebra pattern structures (ZPs) is frequently observed in solar flares and the Crab pulsar. The previous observations show that ZP is a structure only overlapped on the underlying broadband continuum with slight increments and decrements. This work reports an unusually strong ZP burst occurring at the beginning of a solar flare observed simultaneously by two radio telescopes located in China and the Czech Republic and by the EUV telescope on board NASA's satellite Solar Dynamics Observatory on 2013 April 11. It is a very short and super strong explosion whose intensity exceeds several times that of the underlying flaring broadband continuum emission, lasting for just 18 s. EUV images show that the flare starts from several small flare bursting points (FBPs). There is a sudden EUV flash with extra enhancement in one of these FBPs during the ZP burst. Analysis indicates that the ZP burst accompanying an EUV flash is an unusual explosion revealing a strong coherent process with rapid particle acceleration, violent energy release, and fast plasma heating simultaneously in a small region with a short duration just at the beginning of the flare.

Fourier phasing with phase-uncertain mask

International Nuclear Information System (INIS)

Fannjiang, Albert; Liao, Wenjing

2013-01-01

Fourier phasing is the problem of retrieving Fourier phase information from Fourier intensity data. The standard Fourier phase retrieval (without a mask) is known to have many solutions which cause the standard phasing algorithms to stagnate and produce wrong or inaccurate solutions. In this paper Fourier phase retrieval is carried out with the introduction of a randomly fabricated mask in measurement and reconstruction. Highly probable uniqueness of solution, up to a global phase, was previously proved with exact knowledge of the mask. Here the uniqueness result is extended to the case where only rough information about the mask’s phases is assumed. The exponential probability bound for uniqueness is given in terms of the uncertainty-to-diversity ratio of the unknown mask. New phasing algorithms alternating between the object update and the mask update are systematically tested and demonstrated to have the capability of recovering both the object and the mask (within the object support) simultaneously, consistent with the uniqueness result. Phasing with a phase-uncertain mask is shown to be robust with respect to the correlation in the mask as well as the Gaussian and Poisson noises. (paper)

Summation versus suppression in metacontrast masking: On the potential pitfalls of using metacontrast masking to assess perceptual-motor dissociation.

Science.gov (United States)