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Sample records for euv extreme ultraviolet

  1. Surface roughness control by extreme ultraviolet (EUV) radiation

    Science.gov (United States)

    Ahad, Inam Ul; Obeidi, Muhannad Ahmed; Budner, Bogusław; Bartnik, Andrzej; Fiedorowicz, Henryk; Brabazon, Dermot

    2017-10-01

    Surface roughness control of polymeric materials is often desirable in various biomedical engineering applications related to biocompatibility control, separation science and surface wettability control. In this study, Polyethylene terephthalate (PET) polymer films were irradiated with Extreme ultraviolet (EUV) photons in nitrogen environment and investigations were performed on surface roughness modification via EUV exposure. The samples were irradiated at 3 mm and 4 mm distance from the focal spot to investigate the effect of EUV fluence on topography. The topography of the EUV treated PET samples were studied by AFM. The detailed scanning was also performed on the sample irradiated at 3 mm. It was observed that the average surface roughness of PET samples was increased from 9 nm (pristine sample) to 280 nm and 253 nm for EUV irradiated samples. Detailed AFM studies confirmed the presence of 1.8 mm wide period U-shaped channels in EUV exposed PET samples. The walls of the channels were having FWHM of about 0.4 mm. The channels were created due to translatory movements of the sample in horizontal and transverse directions during the EUV exposure. The increased surface roughness is useful for many applications. The nanoscale channels fabricated by EUV exposure could be interesting for microfluidic applications based on lab-on-a-chip (LOC) devices.

  2. Extreme ultraviolet (EUV) degradation of poly(olefin sulfone)s: Towards applications as EUV photoresists

    International Nuclear Information System (INIS)

    Lawrie, Kirsten; Blakey, Idriss; Blinco, James; Gronheid, Roel; Jack, Kevin; Pollentier, Ivan; Leeson, Michael J.; Younkin, Todd R.; Whittaker, Andrew K.

    2011-01-01

    Poly(olefin sulfone)s, formed by the reaction of sulfur dioxide (SO 2 ) and an olefin, are known to be highly susceptible to degradation by radiation and thus have been identified as candidate materials for chain scission-based extreme ultraviolet lithography (EUVL) resist materials. In order to investigate this further, the synthesis and characterisation of two poly(olefin sulfone)s namely poly(1-pentene sulfone) (PPS) and poly(2-methyl-1-pentene sulfone) (PMPS), was achieved and the two materials were evaluated for possible chain scission EUVL resist applications. It was found that both materials possess high sensitivities to EUV photons; however; the rates of outgassing were extremely high. The only observed degradation products were found to be SO 2 and the respective olefin suggesting that depolymerisation takes place under irradiation in a vacuum environment. In addition to depolymerisation, a concurrent conversion of SO 2 moieties to a sulfide phase was observed using XPS.

  3. Extreme Ultraviolet (EUV) induced surface chemistry on Ru

    NARCIS (Netherlands)

    Liu, Feng; Sturm, Jacobus Marinus; Lee, Christopher James; Bijkerk, Frederik

    2013-01-01

    EUV photon induced surface chemistry can damage multilayer mirrors causing reflectivity loss and faster degradation. EUV photo chemistry involves complex processes including direct photon induced surface chemistry and secondary electron radiation chemistry. Current cleaning techniques include dry

  4. Reflectance Tuning at Extreme Ultraviolet (EUV) Wavelengths with Active Multilayer Mirrors

    NARCIS (Netherlands)

    Bayraktar, Muharrem; Lee, Christopher James; van Goor, F.A.; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Bijkerk, Frederik

    2011-01-01

    At extreme ultraviolet (EUV) wavelengths the refractive power of transmission type optical components is limited, therefore reflective components are used. Reflective optics (multilayer mirrors) usually consist of many bilayers and each bilayer is composed of a high and a low refractive index

  5. Divertor extreme ultraviolet (EUV) survey spectroscopy in DIII-D

    Science.gov (United States)

    McLean, Adam; Allen, Steve; Ellis, Ron; Jarvinen, Aaro; Soukhanovskii, Vlad; Boivin, Rejean; Gonzales, Eduardo; Holmes, Ian; Kulchar, James; Leonard, Anthony; Williams, Bob; Taussig, Doug; Thomas, Dan; Marcy, Grant

    2017-10-01

    An extreme ultraviolet spectrograph measuring resonant emissions of D and C in the lower divertor has been added to DIII-D to help resolve an 2X discrepancy between bolometrically measured radiated power and that predicted by boundary codes for DIII-D, JET and ASDEX-U. With 290 and 450 gr/mm gratings, the DivSPRED spectrometer, an 0.3 m flat-field McPherson model 251, measures ground state transitions for D (the Lyman series) and C (e.g., C IV, 155 nm) which account for >75% of radiated power in the divertor. Combined with Thomson scattering and imaging in the DIII-D divertor, measurements of position, temperature and fractional power emission from plasma components are made and compared to UEDGE/SOLPS-ITER. Mechanical, optical, electrical, vacuum, and shielding aspects of DivSPRED are presented. Work supported under USDOE Cooperative Agreement DE-FC02-04ER54698 and DE-AC52-07NA27344, and by the LLNL Laboratory Directed R&D Program, project #17-ERD-020.

  6. Extreme ultraviolet (EUV) and FUV calibration facility for special sensor ultraviolet limb imager (SSULI)

    Science.gov (United States)

    Boyer, Craig N.; Osterman, Steven N.; Thonnard, Stefan E.; McCoy, Robert P.; Williams, J. Z.; Parker, S. E.

    1994-09-01

    A facility for calibrating far ultraviolet and extreme ultraviolet instruments has recently been completed at the Naval Research Laboratory. Our vacuum calibration vessel is 2-m in length, 1.67-m in diameter, and can accommodate optical test benches up to 1.2-m wide by 1.5-m in length. A kinematically positioned frame with four axis precision pointing capability of 10 microns for linear translation and .01 degrees for rotation is presently used during vacuum optical calibration of SSULI. The chamber was fabricated from 304 stainless steel and polished internally to reduce surface outgassing. A dust-free environment is maintained at the rear of the vacuum chamber by enclosing the 2-m hinged vacuum access door in an 8 ft. by 8 ft. class 100 clean room. Every effort was made to obtain an oil-free environment within the vacuum vessel. Outgassing products are continually monitored with a 1 - 200 amu residual gas analyzer. An oil-free claw and vane pump evacuates the chamber to 10-2 torr through 4 in. diameter stainless steel roughing lines. High vacuum is achieved and maintained with a magnetically levitated 480 l/s turbo pump and a 3000 l/s He4 cryopump. Either of two vacuum monochrometers, a 1-m f/10.4 or a 0.2-m f/4.5 are coaxially aligned with the optical axis of the chamber and are used to select single UV atomic resonance lines from a windowless capillary or penning discharge UV light source. A calibrated channeltron detector is coaxially mounted with the SSULI detector during calibration. All vacuum valves, the cooling system for the cryopump compressor, and the roughing pump are controlled through optical fibers which are interfaced to a computer through a VME board. Optical fibers were chosen to ensure that complete electrical isolation is maintained between the computer and the vacuum system valves-solenoids and relays.

  7. Design, conception, and metrology of Extreme Ultraviolet multilayers mirrors resistant environments of space and EUV sources

    International Nuclear Information System (INIS)

    Hecquet, Ch.

    2009-03-01

    The Extreme Ultraviolet Spectrum (EUV) wavelengths, which range between 13 nm and 40 nm, have many applications in science and technology. These have been developed for example in plasma physics (high order harmonics sources, X ray lasers). The work presented is about the design, the fabrication and the metrology of periodic multilayer mirrors. The main motivation of this study is to establish a cycle of development taking into account both the optical properties of reflective coatings (reflectivity, spectral selectivity, attenuation) and their behaviour under various environments. To improve the spectral selectivity, new multilayer periodic structures have been developed. They are characterized by a bimodal reflectance profile with adjustable attenuation. The effect of environment on the stability of performance is especially critical for the optical collection. The addition of material barriers has stabilized the performance of the peak reflectivity for over 200 h at 400 C deg. and it reduces the influence of other factors of instability on the reflectance. In addition, all structures have been fabricated successfully and evaluated in severe environments. (author)

  8. Design, conception, and metrology of Extreme Ultraviolet multilayers mirrors resistant environments of space and EUV sources; Conception, realisation et metrologie de miroirs multicouches pour l'extreme ultraviolet resistants aux environnements du spatial et des sources EUV

    Energy Technology Data Exchange (ETDEWEB)

    Hecquet, Ch.

    2009-03-15

    The Extreme Ultraviolet Spectrum (EUV) wavelengths, which range between 13 nm and 40 nm, have many applications in science and technology. These have been developed for example in plasma physics (high order harmonics sources, X ray lasers). The work presented is about the design, the fabrication and the metrology of periodic multilayer mirrors. The main motivation of this study is to establish a cycle of development taking into account both the optical properties of reflective coatings (reflectivity, spectral selectivity, attenuation) and their behaviour under various environments. To improve the spectral selectivity, new multilayer periodic structures have been developed. They are characterized by a bimodal reflectance profile with adjustable attenuation. The effect of environment on the stability of performance is especially critical for the optical collection. The addition of material barriers has stabilized the performance of the peak reflectivity for over 200 h at 400 C deg. and it reduces the influence of other factors of instability on the reflectance. In addition, all structures have been fabricated successfully and evaluated in severe environments. (author)

  9. Extreme Ultraviolet Explorer Bright Source List

    Science.gov (United States)

    Malina, Roger F.; Marshall, Herman L.; Antia, Behram; Christian, Carol A.; Dobson, Carl A.; Finley, David S.; Fruscione, Antonella; Girouard, Forrest R.; Hawkins, Isabel; Jelinsky, Patrick

    1994-01-01

    Initial results from the analysis of the Extreme Ultraviolet Explorer (EUVE) all-sky survey (58-740 A) and deep survey (67-364 A) are presented through the EUVE Bright Source List (BSL). The BSL contains 356 confirmed extreme ultraviolet (EUV) point sources with supporting information, including positions, observed EUV count rates, and the identification of possible optical counterparts. One-hundred twenty-six sources have been detected longward of 200 A.

  10. Application of Laser Plasma Sources of Soft X-rays and Extreme Ultraviolet (EUV) in Imaging, Processing Materials and Photoionization Studies

    Science.gov (United States)

    Fiedorowicz, H.; Bartnik, A.; Wachulak, P. W.; Jarocki, R.; Kostecki, J.; Szczurek, M.; Ahad, I. U.; Fok, T.; Szczurek, A.; Wȩgrzyński, Ł.

    In the paper we present new applications of laser plasma sources of soft X-rays and extreme ultraviolet (EUV) in various areas of plasma physics, nanotechnology and biomedical engineering. The sources are based on a gas puff target irradiated with nanosecond laser pulses from commercial Nd: YAG lasers, generating pulses with time duration from 1 to 10 ns and energies from 0.5 to 10 J at a 10 Hz repetition rate. The targets are produced with the use of a double valve system equipped with a special nozzle to form a double-stream gas puff target which allows for high conversion efficiency of laser energy into soft X-rays and EUV without degradation of the nozzle. The sources are equipped with various optical systems to collect soft X-ray and EUV radiation and form the radiation beam. New applications of these sources in imaging, including EUV tomography and soft X-ray microscopy, processing of materials and photoionization studies are presented.

  11. Extreme ultraviolet (EUV) solar spectral irradiance (SSI) for ionospheric application - history and contemporary state-of-art

    Science.gov (United States)

    Schmidtke, G.; Jacobi, Ch.; Nikutowski, B.; Erhardt, Ch.

    2014-11-01

    After a historical survey of space related EUV measurements in Germany and the role of Karl Rawer in pursuing this work, we describe present developments in EUV spectroscopy and provide a brief outlook on future activities. The group of Karl Rawer has performed the first scientific space project in Western Europe on 19th October 1954. Then it was decided to include the field of solar EUV spectroscopy in ionospheric investigations. Starting in 1957 an intensified development of instrumentation was going on to explore solar EUV radiation, atmospheric airglow and auroral emissions until the institute had to stop space activities in the early nineteen-eighties. EUV spectroscopy was continued outside of the institute during eight years. This area of work was supported again by the institute developing the Auto-Calibrating Spectrometers (SolACES) for a mission on the International Space Station (ISS). After more than six years in space the instrument is still in operation. Meanwhile the work on the primary task also to validate EUV data available from other space missions has made good progress. The first results of validating those data and combine them into one set of EUV solar spectral irradiance are very promising. It will be recommended for using it by the science and application community. Moreover, a new low-cost type of an EUV spectrometer is presented for monitoring the solar EUV radiation. It shall be further developed for providing EUV-TEC data to be applied in ionospheric models replacing the Covington index F10.7. Applying these data for example in the GNSS signal evaluation a more accurate determination of GNSS receiver positions is expected for correcting the propagation delays of navigation signals traveling through the ionosphere from space to earth. - Latest results in the field of solar EUV spectroscopy are discussed, too.

  12. Spectral filter for splitting a beam with electromagnetic radiation having wavelengths in the extreme ultraviolet (EUV) or soft X-Ray (Soft X) and the infrared (IR) wavelength range

    NARCIS (Netherlands)

    van Goor, F.A.; Bijkerk, Frederik; van den Boogaard, Toine; van den Boogaard, A.J.R.; van der Meer, R.

    2012-01-01

    Spectral filter for splitting the primary radiation from a generated beam with primary electromagnetic radiation having a wavelength in the extreme ultraviolet (EUV radiation) or soft X-ray (soft X) wavelength range and parasitic radiation having a wavelength in the infrared wavelength range (IR

  13. The Dual-channel Extreme Ultraviolet Continuum Experiment: Sounding Rocket EUV Observations of Local B Stars to Determine Their Potential for Supplying Intergalactic Ionizing Radiation

    Science.gov (United States)

    Erickson, Nicholas; Green, James C.; France, Kevin; Stocke, John T.; Nell, Nicholas

    2018-06-01

    We describe the scientific motivation and technical development of the Dual-channel Extreme Ultraviolet Continuum Experiment (DEUCE). DEUCE is a sounding rocket payload designed to obtain the first flux-calibrated spectra of two nearby B stars in the EUV 650-1150Å bandpass. This measurement will help in understanding the ionizing flux output of hot B stars, calibrating stellar models and commenting on the potential contribution of such stars to reionization. DEUCE consists of a grazing incidence Wolter II telescope, a normal incidence holographic grating, and the largest (8” x 8”) microchannel plate detector ever flown in space, covering the 650-1150Å band in medium and low resolution channels. DEUCE will launch on December 1, 2018 as NASA/CU sounding rocket mission 36.331 UG, observing Epsilon Canis Majoris, a B2 II star.

  14. A preliminary estimate of the EUVE cumulative distribution of exposure time on the unit sphere. [Extreme Ultra-Violet Explorer

    Science.gov (United States)

    Tang, C. C. H.

    1984-01-01

    A preliminary study of an all-sky coverage of the EUVE mission is given. Algorithms are provided to compute the exposure of the celestial sphere under the spinning telescopes, taking into account that during part of the exposure time the telescopes are blocked by the earth. The algorithms are used to give an estimate of exposure time at different ecliptic latitudes as a function of the angle of field of view of the telescope. Sample coverage patterns are also given for a 6-month mission.

  15. Elastic modulus of Extreme Ultraviolet exposed single-layer graphene

    NARCIS (Netherlands)

    Mund, Baibhav Kumar; Gao, An; Sturm, Jacobus Marinus; Lee, Christopher James; Bijkerk, Frederik

    2015-01-01

    Highly transparent membranes are required for a number of applications, such as protective coatings for components in Extreme Ultraviolet (EUV) lithography, beam splitters (EUV pump-probe experiments), transmission gratings, and reticles. Graphene is an excellent candidate due to its high tensile

  16. Infrared diffractive filtering for extreme ultraviolet multilayer Bragg reflectors

    NARCIS (Netherlands)

    Medvedev, Viacheslav; van den Boogaard, Toine; van der Meer, R.; Yakshin, Andrey; Louis, Eric; Krivtsun, V.M.; Bijkerk, Frederik

    2013-01-01

    Abstract: We report on the development of a hybrid mirror realized by integrating an EUV-reflecting multilayer coating with a lamellar grating substrate. This hybrid irror acts as an efficient Bragg reflector for extreme ultraviolet (EUV) radiation at a given wavelength while simultaneously

  17. Extreme ultraviolet spectral irradiance measurements since 1946

    Science.gov (United States)

    Schmidtke, G.

    2015-03-01

    In the physics of the upper atmosphere the solar extreme ultraviolet (EUV) radiation plays a dominant role controlling most of the thermospheric/ionospheric (T/I) processes. Since this part of the solar spectrum is absorbed in the thermosphere, platforms to measure the EUV fluxes became only available with the development of rockets reaching altitude levels exceeding 80 km. With the availability of V2 rockets used in space research, recording of EUV spectra started in 1946 using photographic films. The development of pointing devices to accurately orient the spectrographs toward the sun initiated intense activities in solar-terrestrial research. The application of photoelectric recording technology enabled the scientists placing EUV spectrometers aboard satellites observing qualitatively strong variability of the solar EUV irradiance on short-, medium-, and long-term scales. However, as more measurements were performed more radiometric EUV data diverged due to the inherent degradation of the EUV instruments with time. Also, continuous recording of the EUV energy input to the T/I system was not achieved. It is only at the end of the last century that there was progress made in solving the serious problem of degradation enabling to monitore solar EUV fluxes with sufficient radiometric accuracy. The data sets available allow composing the data available to the first set of EUV data covering a period of 11 years for the first time. Based on the sophisticated instrumentation verified in space, future EUV measurements of the solar spectral irradiance (SSI) are promising accuracy levels of about 5% and less. With added low-cost equipment, real-time measurements will allow providing data needed in ionospheric modeling, e.g., for correcting propagation delays of navigation signals from space to earth. Adding EUV airglow and auroral emission monitoring by airglow cameras, the impact of space weather on the terrestrial T/I system can be studied with a spectral terrestrial

  18. Plans for the extreme ultraviolet explorer data base

    Science.gov (United States)

    Marshall, Herman L.; Dobson, Carl A.; Malina, Roger F.; Bowyer, Stuart

    1988-01-01

    The paper presents an approach for storage and fast access to data that will be obtained by the Extreme Ultraviolet Explorer (EUVE), a satellite payload scheduled for launch in 1991. The EUVE telescopes will be operated remotely from the EUVE Science Operation Center (SOC) located at the University of California, Berkeley. The EUVE science payload consists of three scanning telescope carrying out an all-sky survey in the 80-800 A spectral region and a Deep Survey/Spectrometer telescope performing a deep survey in the 80-250 A spectral region. Guest Observers will remotely access the EUVE spectrometer database at the SOC. The EUVE database will consist of about 2 X 10 to the 10th bytes of information in a very compact form, very similar to the raw telemetry data. A history file will be built concurrently giving telescope parameters, command history, attitude summaries, engineering summaries, anomalous events, and ephemeris summaries.

  19. Stellar extreme ultraviolet astronomy

    International Nuclear Information System (INIS)

    Cash, W.C. Jr.

    1978-01-01

    The design, calibration, and launch of a rocket-borne imaging telescope for extreme ultraviolet astronomy are described. The telescope, which employed diamond-turned grazing incidence optics and a ranicon detector, was launched November 19, 1976, from the White Sands Missile Range. The telescope performed well and returned data on several potential stellar sources of extreme ultraviolet radiation. Upper limits ten to twenty times more sensitive than previously available were obtained for the extreme ultraviolet flux from the white dwarf Sirius B. These limits fall a factor of seven below the flux predicted for the star and demonstrate that the temperature of Sirius B is not 32,000 K as previously measured, but is below 30,000 K. The new upper limits also rule out the photosphere of the white dwarf as the source of the recently reported soft x-rays from Sirius. Two other white dwarf stars, Feige 24 and G191-B2B, were observed. Upper limits on the flux at 300 A were interpreted as lower limits on the interstellar hydrogen column densities to these stars. The lower limits indicate interstellar hydrogen densitites of greater than .02 cm -3 . Four nearby stars (Sirius, Procyon, Capella, and Mirzam) were observed in a search for intense low temperature coronae or extended chromospheres. No extreme ultraviolet radiation from these stars was detected, and upper limits to their coronal emisson measures are derived

  20. Telescience - Concepts and contributions to the Extreme Ultraviolet Explorer mission

    Science.gov (United States)

    Marchant, Will; Dobson, Carl; Chakrabarti, Supriya; Malina, Roger F.

    1987-01-01

    It is shown how the contradictory goals of low-cost and fast data turnaround characterizing the Extreme Ultraviolet Explorer (EUVE) mission can be achieved via the early use of telescience style transparent tools and simulations. The use of transparent tools reduces the parallel development of capability while ensuring that valuable prelaunch experience is not lost in the operations phase. Efforts made to upgrade the 'EUVE electronics' simulator are described.

  1. Extreme Ultraviolet Stokesmeter for Pulsed Magneto-Optics

    Directory of Open Access Journals (Sweden)

    Mabel Ruiz-Lopez

    2015-02-01

    Full Text Available Several applications in material science and magnetic holography using extreme ultraviolet (EUV radiation require the measurement of the degree and state of polarization. In this work, an instrument to measure simultaneously both parameters from EUV pulses is presented. The instrument determines the Stokes parameters after a reflection on an array of multilayer mirrors at the Brewster angle. The Stokesmeter was tested at Swiss Light Source at different EUV wavelengths. The experimental Stokes patterns of the source were compared with the simulated pattern.

  2. Absolute calibration of a SPRED [Spectrometer Recording Extended Domain] EUV [extreme ultraviolet] spectrograph for use on the DIII-D tokamak

    International Nuclear Information System (INIS)

    Wood, R.D.; Allen, S.L.

    1988-01-01

    We have performed an absolute intensity calibration of a SPRED multichannel EUV spectrograph using synchrotron radiation from the NBS SURF-II electron storage ring. The calibration procedure and results for both a survey grating (450 g/mm) and a high-resolution (2100 g/mm) grating are presented. The spectrograph is currently in use on the DIII-D tokamak with a tangential line-of-sight at the plasma midplane. Data is first acquired and processed by a microcomputer; the absolute line intensities are then sent to the DIII-D database for comparison with data from other diagnostics. Representative data from DIII-D plasma operations will be presented. 6 refs., 3 figs., 1 tab

  3. Masks for extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

    1998-01-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

  4. Dynamical structure of extreme ultraviolet macrospicules

    Science.gov (United States)

    Karovska, Margarita; Habbal, Shadia Rifai

    1994-01-01

    We describe the substructures forming the macrospicules and their temporal evolution, as revealed by the application of an image enhancement algorithm to extreme ultraviolet (EUV) observations of macrospicules. The enhanced images uncover, for the first time, the substructures forming the column-like structures within the macrospicules and the low-lying arches at their base. The spatial and temporal evolution of macrospicules clearly show continuous interaction between these substructures with occasional ejection of plasma following a ballistic trajectory. We comment on the importance of these results for planning near future space observations of macrospicules with better temporal and spatial resolution.

  5. Graphene defect formation by extreme ultraviolet generated photoelectrons

    NARCIS (Netherlands)

    Gao, An; Lee, Christopher James; Bijkerk, Frederik

    2014-01-01

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy

  6. Extreme ultraviolet interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Goldberg, Kenneth A. [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-12-01

    EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical dimension and smaller. In order to achieve diffraction-limited performance, all-reflective multilayer-coated lithographic imaging systems operating near 13-nm wavelength and 0.1 NA have system wavefront tolerances of 0.27 nm, or 0.02 waves RMS. Owing to the highly-sensitive resonant reflective properties of multilayer mirrors and extraordinarily tight tolerances set forth for their fabrication, EUV optical systems require at-wavelength EUV interferometry for final alignment and qualification. This dissertation discusses the development and successful implementation of high-accuracy EUV interferometric techniques. Proof-of-principle experiments with a prototype EUV point-diffraction interferometer for the measurement of Fresnel zoneplate lenses first demonstrated sub-wavelength EUV interferometric capability. These experiments spurred the development of the superior phase-shifting point-diffraction interferometer (PS/PDI), which has been implemented for the testing of an all-reflective lithographic-quality EUV optical system. Both systems rely on pinhole diffraction to produce spherical reference wavefronts in a common-path geometry. Extensive experiments demonstrate EUV wavefront-measuring precision beyond 0.02 waves RMS. EUV imaging experiments provide verification of the high-accuracy of the point-diffraction principle, and demonstrate the utility of the measurements in successfully predicting imaging performance. Complementary to the experimental research, several areas of theoretical investigation related to the novel PS/PDI system are presented. First-principles electromagnetic field simulations of pinhole diffraction are conducted to ascertain the upper limits of measurement accuracy and to guide selection of the pinhole diameter. Investigations of the relative merits of different PS/PDI configurations accompany a general study of the most significant sources

  7. The creation of radiation dominated plasmas using laboratory extreme ultra-violet lasers

    Science.gov (United States)

    Tallents, G. J.; Wilson, S.; West, A.; Aslanyan, V.; Lolley, J.; Rossall, A. K.

    2017-06-01

    Ionization in experiments where solid targets are irradiated by high irradiance extreme ultra-violet (EUV) lasers is examined. Free electron degeneracy effects on ionization in the presence of a high EUV flux of radiation is shown to be important. Overlap of the physics of such plasmas with plasma material under compression in indirect inertial fusion is explored. The design of the focusing optics needed to achieve high irradiance (up to 1014 Wcm-2) using an EUV capillary laser is presented.

  8. Coherence techniques at extreme ultraviolet wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chang [Univ. of California, Berkeley, CA (United States)

    2002-01-01

    The renaissance of Extreme Ultraviolet (EUV) and soft x-ray (SXR) optics in recent years is mainly driven by the desire of printing and observing ever smaller features, as in lithography and microscopy. This attribute is complemented by the unique opportunity for element specific identification presented by the large number of atomic resonances, essentially for all materials in this range of photon energies. Together, these have driven the need for new short-wavelength radiation sources (e.g. third generation synchrotron radiation facilities), and novel optical components, that in turn permit new research in areas that have not yet been fully explored. This dissertation is directed towards advancing this new field by contributing to the characterization of spatial coherence properties of undulator radiation and, for the first time, introducing Fourier optical elements to this short-wavelength spectral region. The first experiment in this dissertation uses the Thompson-Wolf two-pinhole method to characterize the spatial coherence properties of the undulator radiation at Beamline 12 of the Advanced Light Source. High spatial coherence EUV radiation is demonstrated with appropriate spatial filtering. The effects of small vertical source size and beamline apertures are observed. The difference in the measured horizontal and vertical coherence profile evokes further theoretical studies on coherence propagation of an EUV undulator beamline. A numerical simulation based on the Huygens-Fresnel principle is performed.

  9. Design, fabrication, and characterization of high-efficiency extreme ultraviolet diffusers

    Energy Technology Data Exchange (ETDEWEB)

    Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

    2004-02-19

    As the development of extreme ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, makes it very difficult to implement many components that are commonplace in the longer wavelength regimes. One such example is the diffuser often implemented with ordinary ground glass in the visible light regime. Here we demonstrate the fabrication of reflective EUV diffusers with high efficiency within a controllable bandwidth. Using these techniques we have fabricated diffusers with efficiencies exceeding 10% within a moderate angular single-sided bandwidth of approximately 0.06 radians.

  10. Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas

    International Nuclear Information System (INIS)

    Zhao, H. Y.; Zhao, H. W.; Sun, L. T.; Zhang, X. Z.; Wang, H.; Ma, B. H.; Li, X. X.; Zhu, Y. H.; Sheng, L. S.; Zhang, G. B.; Tian, Y. C.

    2008-01-01

    Extreme ultraviolet lithography (EUVL) is considered as the most promising solution at and below dynamic random access memory 32 nm half pitch among the next generation lithography, and EUV light sources with high output power and sufficient lifetime are crucial for the realization of EUVL. However, there is no EUV light source completely meeting the requirements for the commercial application in lithography yet. Therefore, ECR plasma is proposed as a novel concept EUV light source. In order to investigate the feasibility of ECR plasma as a EUV light source, the narrow band EUV power around 13.5 nm emitted by two highly charged ECR ion sources--LECR2M and SECRAL--was measured with a calibrated EUV power measurement tool. Since the emission lines around 13.5 nm can be attributed to the 4d-5p transitions of Xe XI or the 4d-4f unresolved transition array of Sn VIII-XIII, xenon plasma was investigated. The dependence of the EUV throughput and the corresponding conversion efficiency on the parameters of the ion source, such as the rf power and the magnetic confinement configurations, were preliminarily studied

  11. Kr photoionized plasma induced by intense extreme ultraviolet pulses

    Science.gov (United States)

    Bartnik, A.; Wachulak, P.; Fiedorowicz, H.; Skrzeczanowski, W.

    2016-04-01

    Irradiation of any gas with an intense EUV (extreme ultraviolet) radiation beam can result in creation of photoionized plasmas. The parameters of such plasmas can be significantly different when compared with those of the laser produced plasmas (LPP) or discharge plasmas. In this work, the photoionized plasmas were created in a krypton gas irradiated using an LPP EUV source operating at a 10 Hz repetition rate. The Kr gas was injected into the vacuum chamber synchronously with the EUV radiation pulses. The EUV beam was focused onto a Kr gas stream using an axisymmetrical ellipsoidal collector. The resulting low temperature Kr plasmas emitted electromagnetic radiation in the wide spectral range. The emission spectra were measured either in the EUV or an optical range. The EUV spectrum was dominated by emission lines originating from Kr III and Kr IV ions, and the UV/VIS spectra were composed from Kr II and Kr I lines. The spectral lines recorded in EUV, UV, and VIS ranges were used for the construction of Boltzmann plots to be used for the estimation of the electron temperature. It was shown that for the lowest Kr III and Kr IV levels, the local thermodynamic equilibrium (LTE) conditions were not fulfilled. The electron temperature was thus estimated based on Kr II and Kr I species where the partial LTE conditions could be expected.

  12. Characteristics of extreme ultraviolet emission from high-Z plasmas

    International Nuclear Information System (INIS)

    Ohashi, H.; Higashiguchi, T.; Suzuki, Y.; Kawasaki, M.; Suzuki, C.; Tomita, K.; Nishikino, M.; Fujioka, S.; Endo, A.; Li, B.; Otsuka, T.; Dunne, P.; O'Sullivan, G.

    2016-01-01

    We demonstrate the extreme ultraviolet (EUV) and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6.x nm and the water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on high-Z plasma UTA source, coupled to multilayer mirror optics. (paper)

  13. Plasma control for efficient extreme ultra-violet source

    International Nuclear Information System (INIS)

    Takahashi, Kensaku; Nakajima, Mitsuo; Kawamura, Tohru; Shiho, Makoto; Hotta, Eiki; Horioka, Kazuhiko

    2008-01-01

    To generate a high efficiency extreme-ultraviolet (EUV) source, effects of plasma shape for controlling radiative plasmas based on xenon capillary discharge are experimentally investigated. The radiation characteristics observed via tapered capillary discharge are compared with those of straight one. From the comparison, the long emission period and different plasma behaviors of tapered capillary discharge are confirmed. This means that control of the plasma geometry is effective for prolonging the EUV emission period. This result also indicates that the plasma shape control seems to have a potential for enhancing the conversion efficiency. (author)

  14. Characteristics of extreme ultraviolet emission from high-Z plasmas

    Science.gov (United States)

    Ohashi, H.; Higashiguchi, T.; Suzuki, Y.; Kawasaki, M.; Suzuki, C.; Tomita, K.; Nishikino, M.; Fujioka, S.; Endo, A.; Li, B.; Otsuka, T.; Dunne, P.; O'Sullivan, G.

    2016-03-01

    We demonstrate the extreme ultraviolet (EUV) and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6.x nm and the water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on high-Z plasma UTA source, coupled to multilayer mirror optics.

  15. NEW SOLAR EXTREME-ULTRAVIOLET IRRADIANCE OBSERVATIONS DURING FLARES

    International Nuclear Information System (INIS)

    Woods, Thomas N.; Hock, Rachel; Eparvier, Frank; Jones, Andrew R.; Chamberlin, Phillip C.; Klimchuk, James A.; Didkovsky, Leonid; Judge, Darrell; Mariska, John; Warren, Harry; Schrijver, Carolus J.; Webb, David F.; Bailey, Scott; Tobiska, W. Kent

    2011-01-01

    New solar extreme-ultraviolet (EUV) irradiance observations from the NASA Solar Dynamics Observatory (SDO) EUV Variability Experiment provide full coverage in the EUV range from 0.1 to 106 nm and continuously at a cadence of 10 s for spectra at 0.1 nm resolution and even faster, 0.25 s, for six EUV bands. These observations can be decomposed into four distinct characteristics during flares. First, the emissions that dominate during the flare's impulsive phase are the transition region emissions, such as the He II 30.4 nm. Second, the hot coronal emissions above 5 MK dominate during the gradual phase and are highly correlated with the GOES X-ray. A third flare characteristic in the EUV is coronal dimming, seen best in the cool corona, such as the Fe IX 17.1 nm. As the post-flare loops reconnect and cool, many of the EUV coronal emissions peak a few minutes after the GOES X-ray peak. One interesting variation of the post-eruptive loop reconnection is that warm coronal emissions (e.g., Fe XVI 33.5 nm) sometimes exhibit a second large peak separated from the primary flare event by many minutes to hours, with EUV emission originating not from the original flare site and its immediate vicinity, but rather from a volume of higher loops. We refer to this second peak as the EUV late phase. The characterization of many flares during the SDO mission is provided, including quantification of the spectral irradiance from the EUV late phase that cannot be inferred from GOES X-ray diagnostics.

  16. Extreme ultra-violet movie camera for imaging microsecond time scale magnetic reconnection

    International Nuclear Information System (INIS)

    Chai, Kil-Byoung; Bellan, Paul M.

    2013-01-01

    An ultra-fast extreme ultra-violet (EUV) movie camera has been developed for imaging magnetic reconnection in the Caltech spheromak/astrophysical jet experiment. The camera consists of a broadband Mo:Si multilayer mirror, a fast decaying YAG:Ce scintillator, a visible light block, and a high-speed visible light CCD camera. The camera can capture EUV images as fast as 3.3 × 10 6 frames per second with 0.5 cm spatial resolution. The spectral range is from 20 eV to 60 eV. EUV images reveal strong, transient, highly localized bursts of EUV radiation when magnetic reconnection occurs

  17. Extreme ultra-violet movie camera for imaging microsecond time scale magnetic reconnection

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Kil-Byoung; Bellan, Paul M. [Applied Physics, Caltech, 1200 E. California Boulevard, Pasadena, California 91125 (United States)

    2013-12-15

    An ultra-fast extreme ultra-violet (EUV) movie camera has been developed for imaging magnetic reconnection in the Caltech spheromak/astrophysical jet experiment. The camera consists of a broadband Mo:Si multilayer mirror, a fast decaying YAG:Ce scintillator, a visible light block, and a high-speed visible light CCD camera. The camera can capture EUV images as fast as 3.3 × 10{sup 6} frames per second with 0.5 cm spatial resolution. The spectral range is from 20 eV to 60 eV. EUV images reveal strong, transient, highly localized bursts of EUV radiation when magnetic reconnection occurs.

  18. Extreme ultraviolet spectroscopy of low pressure helium microwave driven discharges

    Science.gov (United States)

    Espinho, Susana; Felizardo, Edgar; Tatarova, Elena; Alves, Luis Lemos

    2016-09-01

    Surface wave driven discharges are reliable plasma sources that can produce high levels of vacuum and extreme ultraviolet radiation (VUV and EUV). The richness of the emission spectrum makes this type of discharge a possible alternative source in EUV/VUV radiation assisted applications. However, due to challenging experimental requirements, publications concerning EUV radiation emitted by microwave plasmas are scarce and a deeper understanding of the main mechanisms governing the emission of radiation in this spectral range is required. To this end, the EUV radiation emitted by helium microwave driven plasmas operating at 2.45 GHz has been studied for low pressure conditions. Spectral lines from excited helium atoms and ions were detected via emission spectroscopy in the EUV/VUV regions. Novel data concerning the spectral lines observed in the 23 - 33 nm wavelength range and their intensity behaviour with variation of the discharge operational conditions are presented. The intensity of all the spectral emissions strongly increases with the microwave power delivered to the plasma up to 400 W. Furthermore, the intensity of all the ion spectral emissions in the EUV range decreases by nearly one order of magnitude as the pressure was raised from 0.2 to 0.5 mbar. Work funded by FCT - Fundacao para a Ciencia e a Tecnologia, under Project UID/FIS/50010/2013 and grant SFRH/BD/52412/2013 (PD-F APPLAuSE).

  19. A search for thermal extreme ultraviolet radiation from nearby pulsars

    International Nuclear Information System (INIS)

    Greenstein, G.; Margon, B.

    1977-01-01

    We present the first extreme ultraviolet (100-1000 A) observations of radio pulsars. Using an EUV telescope carried aboard the Apollo-Soyuz mission, data were acquired on the nearby pulsars PSR 1133 + 16, 1451 - 68 and 1929 + 10. The data are interpreted to set limits on the effective temperatures of the neutron stars, yielding T 5 K in the best cases, and the limits compared with theoretical predictions. (orig./BJ) [de

  20. Tomographic extreme-ultraviolet spectrographs: TESS.

    Science.gov (United States)

    Cotton, D M; Stephan, A; Cook, T; Vickers, J; Taylor, V; Chakrabarti, S

    2000-08-01

    We describe the system of Tomographic Extreme Ultraviolet (EUV) SpectrographS (TESS) that are the primary instruments for the Tomographic Experiment using Radiative Recombinative Ionospheric EUV and Radio Sources (TERRIERS) satellite. The spectrographs were designed to make high-sensitivity {80 counts/s)/Rayleigh [one Rayleigh is equivalent to 10(6) photons/(4pi str cm(2)s)}, line-of-sight measurements of the oi 135.6- and 91.1-nm emissions suitable for tomographic inversion. The system consists of five spectrographs, four identical nightglow instruments (for redundancy and added sensitivity), and one instrument with a smaller aperture to reduce sensitivity and increase spectral resolution for daytime operation. Each instrument has a bandpass of 80-140 nm with approximately 2- and 1-nm resolution for the night and day instruments, respectively. They utilize microchannel-plate-based two-dimensional imaging detectors with wedge-and-strip anode readouts. The instruments were designed, fabricated, and calibrated at Boston University, and the TERRIERS satellite was launched on 18 May 1999 from Vandenberg Air Force Base, California.

  1. Evidence for a New Class of Extreme Ultraviolet Sources

    Science.gov (United States)

    Maoz, Dan; Ofek, Eran O.; Shemi, Amotz

    1997-01-01

    Most of the sources detected in the extreme ultraviolet (EUV; 100-600 A) by the ROSAT/WFC and EUVE all-sky surveys have been identified with active late-type stars and hot white dwarfs that are near enough to the Earth to escape absorption by interstellar gas. However, about 15 per cent of EUV sources are as yet unidentified with any optical counterparts. We examine whether the unidentified EUV sources may consist of the same population of late-type stars and white dwarfs. We present B and R photometry of stars in the fields of seven of the unidentified EUV sources. We detect in the optical the entire main-sequence and white dwarf population out to the greatest distances where they could still avoid absorption. We use color-magnitude diagrams to demonstrate that, in most of the fields, none of the observed stars has the colours and magnitudes of late-type dwarfs at distances less than 100 pc. Similarly, none of the observed stars is a white dwarf within 500 pc that is hot enough to be a EUV emitter. The unidentified EUV sources we study are not detected in X-rays, while cataclysmic variables, X-ray binaries, and active galactic nuclei generally are. We conclude that some of the EUV sources may be a new class of nearby objects, which are either very faint at optical bands or which mimic the colours and magnitudes of distant late-type stars or cool white dwarfs. One candidate for optically faint objects is isolated old neutron stars, slowly accreting interstellar matter. Such neutron stars are expected to be abundant in the Galaxy, and have not been unambiguously detected.

  2. Laser-produced plasma-extreme ultraviolet light source for next generation lithography

    International Nuclear Information System (INIS)

    Nishihara, Katsunobu; Nishimura, Hiroaki; Gamada, Kouhei; Murakami, Masakatsu; Mochizuki, Takayasu; Sasaki, Akira; Sunahara, Atsushi

    2005-01-01

    Extreme ultraviolet (EUV) lithography is the most promising candidate for the next generation lithography for the 45 nm technology node and below. EUV light sources under consideration use 13.5 nm radiations from multicharged xenon, tin and lithium ions, because Mo/Si multiplayer mirrors have high reflectivity at this wavelength. A review of laser-produced plasma (LPP) EUV light sources is presented with a focus on theoretical and experimental studies under the auspices of the Leading Project promoted by MEXT. We discuss three theoretical topics: atomic processes in the LPP-EUV light source, conversion efficiency from laser light to EUV light at 13.5 nm wave-length with 2% bound width, and fast ion spectra. The properties of EUV emission from tin and xenon plasmas are also shown based on experimental results. (author)

  3. Extreme ultraviolet lithography: A few more pieces of the puzzle

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Christopher N. [Univ. of California, Berkeley, CA (United States)

    2009-05-20

    The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology. Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing. Photoresist. Two new methods of quantifying the deprotection blur of EUV photoresists are described and experimentally demonstrated. The deprotection blur, LER, and sensitivity parameters of several EUV photoresists are quantified simultaneously as base weight percent, photoacid generator (PAG) weight percent, and post-exposure bake (PEB) temperature are varied. Two surprising results are found: (1) changing base weight percent does not significantly affect the deprotection blur of EUV photoresist, and (2) increasing PAG weight percent can simultaneously reduce LER and E-size in EUV photoresist. The latter result motivates the development of an EUV exposure statistics model that includes the effects of photon shot noise, the PAG spatial distribution, and the changing of the PAG distribution during the exposure. In addition, a shot noise + deprotection blur model is used to show that as deprotection blur becomes large relative to the size of the printed feature, LER reduction from improved counting statistics becomes dominated by an increase in LER due to reduced deprotection contrast. Metrology. Finally, this

  4. Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film

    Science.gov (United States)

    Hijikata, Hayato; Kozawa, Takahiro; Tagawa, Seiichi; Takei, Satoshi

    2009-06-01

    A bottom extreme-ultraviolet-sensitive coating (BESC) for evaluation of the absorption coefficients of ultrathin films such as extreme ultraviolet (EUV) resists was developed. This coating consists of a polymer, crosslinker, acid generator, and acid-responsive chromic dye and is formed by a conventional spin-coating method. By heating the film after spin-coating, a crosslinking reaction is induced and the coating becomes insoluble. A typical resist solution can be spin-coated on a substrate covered with the coating film. The evaluation of the linear absorption coefficients of polymer films was demonstrated by measuring the EUV absorption of BESC substrates on which various polymers were spin-coated.

  5. Nonlinear wave-mixing processes in the extreme ultraviolet

    International Nuclear Information System (INIS)

    Misoguti, L.; Christov, I. P.; Backus, S.; Murnane, M. M.; Kapteyn, H. C.

    2005-01-01

    We present data from two-color high-order harmonic generation in a hollow waveguide, that suggest the presence of a nonlinear-optical frequency conversion process driven by extreme ultraviolet light. By combining the fundamental and second harmonic of an 800 nm laser in a hollow-core fiber, with varying relative polarizations, and by observing the pressure and power scaling of the various harmonic orders, we show that the data are consistent with a picture where we drive the process of high-harmonic generation, which in turn drives four-wave frequency mixing processes in the extreme EUV. This work promises a method for extending nonlinear optics into the extreme ultraviolet region of the spectrum using an approach that has not previously been considered, and has compelling implications for generating tunable light at short wavelengths

  6. Extreme ultraviolet patterning of tin-oxo cages

    Science.gov (United States)

    Haitjema, Jarich; Zhang, Yu; Vockenhuber, Michaela; Kazazis, Dimitrios; Ekinci, Yasin; Brouwer, Albert M.

    2017-07-01

    We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These cage molecules were already known to function as a negative tone photoresist for EUV radiation, but in this work, we significantly optimized their performance. Our results show that sensitivity and resolution are only meaningful photoresist parameters if the process conditions are optimized. We focus on contrast curves of the materials using large area EUV exposures and patterning of the cages using EUV interference lithography. It is shown that baking steps, such as postexposure baking, can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. A layer thickness increase reduced the necessary dose to induce a solubility change but decreased the patterning quality. The patterning experiments were affected by minor changes in processing conditions such as an increased rinsing time. In addition, we show that the anions of the cage can influence the sensitivity and quality of the patterning, probably through their effect on physical properties of the materials.

  7. Low-debris, efficient laser-produced plasma extreme ultraviolet source by use of a regenerative liquid microjet target containing tin dioxide (SnO2) nanoparticles

    Science.gov (United States)

    Higashiguchi, Takeshi; Dojyo, Naoto; Hamada, Masaya; Sasaki, Wataru; Kubodera, Shoichi

    2006-05-01

    We demonstrated a low-debris, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO2) nanoparticles. By using a low SnO2 concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris.

  8. Low-debris, efficient laser-produced plasma extreme ultraviolet source by use of a regenerative liquid microjet target containing tin dioxide (SnO2) nanoparticles

    International Nuclear Information System (INIS)

    Higashiguchi, Takeshi; Dojyo, Naoto; Hamada, Masaya; Sasaki, Wataru; Kubodera, Shoichi

    2006-01-01

    We demonstrated a low-debris, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO 2 ) nanoparticles. By using a low SnO 2 concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris

  9. Ultimate waveform reproducibility of extreme-ultraviolet pulses by high-harmonic generation in quartz

    Science.gov (United States)

    Garg, M.; Kim, H. Y.; Goulielmakis, E.

    2018-05-01

    Optical waveforms of light reproducible with subcycle precision underlie applications of lasers in ultrafast spectroscopies, quantum control of matter and light-based signal processing. Nonlinear upconversion of optical pulses via high-harmonic generation in gas media extends these capabilities to the extreme ultraviolet (EUV). However, the waveform reproducibility of the generated EUV pulses in gases is inherently sensitive to intensity and phase fluctuations of the driving field. We used photoelectron interferometry to study the effects of intensity and carrier-envelope phase of an intense single-cycle optical pulse on the field waveform of EUV pulses generated in quartz nanofilms, and contrasted the results with those obtained in gas argon. The EUV waveforms generated in quartz were found to be virtually immune to the intensity and phase of the driving field, implying a non-recollisional character of the underlying emission mechanism. Waveform-sensitive photonic applications and precision measurements of fundamental processes in optics will benefit from these findings.

  10. EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

    Science.gov (United States)

    Attwood, David

    2004-12-01

    The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical

  11. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    International Nuclear Information System (INIS)

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-01-01

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  12. Spin-on-glass coatings for the generation of super-polishedsubstrates for extreme ultraviolet optics

    Energy Technology Data Exchange (ETDEWEB)

    Salmassi, Farhad; Naulleau, Patrick P.; Gullikson, Eric M.

    2005-01-01

    Substrates intended for use as extreme ultraviolet (EUV) optics have extremely stringent requirements in terms of finish. These requirements can dramatically increase the cost and fabrication time, especially when non-conventional shapes, such as toroids, are required. Here we present a spin-on-glass resist process capable of generating super-polished parts from inexpensive substrates. The method has been used to render diamond-turned substrates compatible for use as EUV optics. Toroidal diamond-turned optics with starting rms roughness in the 3.3 to 3.7 nm range have been smoothed to the 0.4 to 0.6 nm range. EUV reflectometry characterization of these optics has demonstrated reflectivities of approximately 63%.

  13. Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source.

    Science.gov (United States)

    Higashiguchi, Takeshi; Hamada, Masaya; Kubodera, Shoichi

    2007-03-01

    A regenerative tin liquid microjet target was developed for a high average power extreme ultraviolet (EUV) source. The diameter of the target was smaller than 160 microm and good vacuum lower than 0.5 Pa was maintained during the operation. A maximum EUV conversion efficiency of 1.8% at the Nd:yttrium-aluminum-garnet laser intensity of around 2 x 10(11) Wcm(2) with a spot diameter of 175 microm (full width at half maximum) was observed. The angular distribution of the EUV emission remained almost isotropic, whereas suprathermal ions mainly emerged toward the target normal.

  14. Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source

    Science.gov (United States)

    Higashiguchi, Takeshi; Hamada, Masaya; Kubodera, Shoichi

    2007-03-01

    A regenerative tin liquid microjet target was developed for a high average power extreme ultraviolet (EUV) source. The diameter of the target was smaller than 160 μm and good vacuum lower than 0.5 Pa was maintained during the operation. A maximum EUV conversion efficiency of 1.8% at the Nd:yttrium-aluminum-garnet laser intensity of around 2×1011 W/cm2 with a spot diameter of 175 μm (full width at half maximum) was observed. The angular distribution of the EUV emission remained almost isotropic, whereas suprathermal ions mainly emerged toward the target normal.

  15. Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source

    International Nuclear Information System (INIS)

    Higashiguchi, Takeshi; Hamada, Masaya; Kubodera, Shoichi

    2007-01-01

    A regenerative tin liquid microjet target was developed for a high average power extreme ultraviolet (EUV) source. The diameter of the target was smaller than 160 μm and good vacuum lower than 0.5 Pa was maintained during the operation. A maximum EUV conversion efficiency of 1.8% at the Nd:yttrium-aluminum-garnet laser intensity of around 2x10 11 W/cm 2 with a spot diameter of 175 μm (full width at half maximum) was observed. The angular distribution of the EUV emission remained almost isotropic, whereas suprathermal ions mainly emerged toward the target normal

  16. An Extreme-ultraviolet Wave Generating Upward Secondary Waves in a Streamer-like Solar Structure

    Science.gov (United States)

    Zheng, Ruisheng; Chen, Yao; Feng, Shiwei; Wang, Bing; Song, Hongqiang

    2018-05-01

    Extreme-ultraviolet (EUV) waves, spectacular horizontally propagating disturbances in the low solar corona, always trigger horizontal secondary waves (SWs) when they encounter the ambient coronal structure. We present the first example of upward SWs in a streamer-like structure after the passing of an EUV wave. This event occurred on 2017 June 1. The EUV wave happened during a typical solar eruption including a filament eruption, a coronal mass ejection (CME), and a C6.6 flare. The EUV wave was associated with quasi-periodic fast propagating (QFP) wave trains and a type II radio burst that represented the existence of a coronal shock. The EUV wave had a fast initial velocity of ∼1000 km s‑1, comparable to high speeds of the shock and the QFP wave trains. Intriguingly, upward SWs rose slowly (∼80 km s‑1) in the streamer-like structure after the sweeping of the EUV wave. The upward SWs seemed to originate from limb brightenings that were caused by the EUV wave. All of the results show that the EUV wave is a fast-mode magnetohydrodynamic (MHD) shock wave, likely triggered by the flare impulses. We suggest that part of the EUV wave was probably trapped in the closed magnetic fields of the streamer-like structure, and upward SWs possibly resulted from the release of slow-mode trapped waves. It is believed that the interplay of the strong compression of the coronal shock and the configuration of the streamer-like structure is crucial for the formation of upward SWs.

  17. Estimation and control of large-scale systems with an application to adaptive optics for EUV lithography

    NARCIS (Netherlands)

    Haber, A.

    2014-01-01

    Extreme UltraViolet (EUV) lithography is a new technology for production of integrated circuits. In EUV lithographic machines, optical elements are heated by absorption of exposure energy. Heating induces thermoelastic deformations of optical elements and consequently, it creates wavefront

  18. Design and fabrication of advanced EUV diffractive elements

    Energy Technology Data Exchange (ETDEWEB)

    Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

    2003-11-16

    As extreme ultraviolet (EUV) lithography approaches commercial reality, the development of EUV-compatible diffractive structures becomes increasingly important. Such devices are relevant to many aspects of EUV technology including interferometry, illumination, and spectral filtering. Moreover, the current scarcity of high power EUV sources makes the optical efficiency of these diffractive structures a paramount concern. This fact has led to a strong interest in phase-enhanced diffractive structures. Here we describe recent advancements made in the fabrication of such devices.

  19. Imaging and Patterning on Nanometer Scale Using Coherent EUV Light

    International Nuclear Information System (INIS)

    Wachulak, P.W.; Fiedorowicz, H.; Bartnik, A.; Marconi, M.C.; Menoni, C.S.; Rocca, J.J.

    2010-01-01

    Extreme ultraviolet (EUV) covers wavelength range from about 5 nm to 50 nm. That is why EUV is especially applicable for imaging and patterning on nanometer scale length. In the paper periodic nanopatterning realized by interference lithography and high resolution holographic nanoimaging performed in a Gabor in-line scheme are presented. In the experiments a compact table top EUV laser was used. Preliminary studies on using a laser plasma EUV source for nanoimaging are presented as well. (author)

  20. Extreme Ultraviolet Imaging Telescope (EIT)

    Science.gov (United States)

    Lemen, J. R.; Freeland, S. L.

    1997-01-01

    Efforts concentrated on development and implementation of the SolarSoft (SSW) data analysis system. From an EIT analysis perspective, this system was designed to facilitate efficient reuse and conversion of software developed for Yohkoh/SXT and to take advantage of a large existing body of software developed by the SDAC, Yohkoh, and SOHO instrument teams. Another strong motivation for this system was to provide an EIT analysis environment which permits coordinated analysis of EIT data in conjunction with data from important supporting instruments, including Yohkoh/SXT and the other SOHO coronal instruments; CDS, SUMER, and LASCO. In addition, the SSW system will support coordinated EIT/TRACE analysis (by design) when TRACE data is available; TRACE launch is currently planned for March 1998. Working with Jeff Newmark, the Chianti software package (K.P. Dere et al) and UV /EUV data base was fully integrated into the SSW system to facilitate EIT temperature and emission analysis.

  1. Optical proximity correction for anamorphic extreme ultraviolet lithography

    Science.gov (United States)

    Clifford, Chris; Lam, Michael; Raghunathan, Ananthan; Jiang, Fan; Fenger, Germain; Adam, Kostas

    2017-10-01

    The change from isomorphic to anamorphic optics in high numerical aperture (NA) extreme ultraviolet (EUV) scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated, and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking (MRC). OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs which are more tolerant to mask errors.

  2. Telescience - Concepts And Contributions To The Extreme Ultraviolet Explorer Mission

    Science.gov (United States)

    Marchant, Will; Dobson, Carl; Chakrabarti, Supriya; Malina, Roger F.

    1987-10-01

    A goal of the telescience concept is to allow scientists to use remotely located instruments as they would in their laboratory. Another goal is to increase reliability and scientific return of these instruments. In this paper we discuss the role of transparent software tools in development, integration, and postlaunch environments to achieve hands on access to the instrument. The use of transparent tools helps to reduce the parallel development of capability and to assure that valuable pre-launch experience is not lost in the operations phase. We also discuss the use of simulation as a rapid prototyping technique. Rapid prototyping provides a cost-effective means of using an iterative approach to instrument design. By allowing inexpensive produc-tion of testbeds, scientists can quickly tune the instrument to produce the desired scientific data. Using portions of the Extreme Ultraviolet Explorer (EUVE) system, we examine some of the results of preliminary tests in the use of simulation and tran-sparent tools. Additionally, we discuss our efforts to upgrade our software "EUVE electronics" simulator to emulate a full instrument, and give the pros and cons of the simulation facilities we have developed.

  3. Extreme Ultraviolet Emission Spectrum of CO_2 Induced by Electron Impact at 200 eV

    Science.gov (United States)

    Kanik, I.; Ajello, J. M.; James, G. K.

    1993-01-01

    We present the extreme ultraviolet (EUV) emission spectrum of CO_2 induced by electronimpact at 200 eV. There are 36 spectral features which are identified with a resolution of 0.5 nmover the wavelength range of 40 to 125 nm. Absolute emission cross sections were obtained for eachof these features. The EUV emission spectrum induced by electron impact consist of atomicmultiplets of CI,II and OI,II,III as well as CO and CO^+ molecular band systems produced bydissociative excitation. The CI (119.4 nm) multiplet is the strongest feature of CI with a peak crosssection of 3.61 x 10^(-19) cm^2 at 200 eV. The strongest feature of OI in the EUV spectrum is theOI (99.0 nm) multiplet with a peak cross section of 3.59 x 10^(-19) cm^2 at 200 eV.

  4. Exploring the temporally resolved electron density evolution in extreme ultra-violet induced plasmas

    International Nuclear Information System (INIS)

    Van der Horst, R M; Beckers, J; Nijdam, S; Kroesen, G M W

    2014-01-01

    We measured the electron density in an extreme ultra-violet (EUV) induced plasma. This is achieved in a low-pressure argon plasma by using a method called microwave cavity resonance spectroscopy. The measured electron density just after the EUV pulse is 2.6 × 10 16  m −3 . This is in good agreement with a theoretical prediction from photo-ionization, which yields a density of 4.5 × 10 16  m −3 . After the EUV pulse the density slightly increases due to electron impact ionization. The plasma (i.e. electron density) decays in tens of microseconds. (fast track communication)

  5. Methods and apparatus for use with extreme ultraviolet light having contamination protection

    Science.gov (United States)

    Chilese, Francis C.; Torczynski, John R.; Garcia, Rudy; Klebanoff, Leonard E.; Delgado, Gildardo R.; Rader, Daniel J.; Geller, Anthony S.; Gallis, Michail A.

    2016-07-12

    An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

  6. Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

    NARCIS (Netherlands)

    Dolgov, A.; Lopaev, D.; Lee, Christopher James; Zoethout, E.; Medvedev, Viacheslav; Yakushev, O.; Bijkerk, Frederik

    2015-01-01

    Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiation from a pulsed tin plasma discharge. Our studies show that the film is chemically inert and has characteristics that

  7. New type of discharge-produced plasma source for extreme ultraviolet based on liquid tin jet electrodes

    NARCIS (Netherlands)

    Koshelev, K.N.; Krivtsun, V.M.; Ivanov, V.; Yakushev, O.; Chekmarev, A.; Koloshnikov, V.; Snegirev, E.; Medvedev, Viacheslav

    2012-01-01

    A new approach for discharge-produced plasma (DPP) extreme ultraviolet (EUV) sources based on the usage of two liquid metallic alloy jets as discharge electrodes has been proposed and tested. Discharge was ignited using laser ablation of one of the cathode jets. A system with two jet electrodes was

  8. Three new extreme ultraviolet spectrometers on NSTX-U for impurity monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Weller, M. E., E-mail: weller4@llnl.gov; Beiersdorfer, P.; Soukhanovskii, V. A.; Magee, E. W.; Scotti, F. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    2016-11-15

    Three extreme ultraviolet (EUV) spectrometers have been mounted on the National Spherical Torus Experiment–Upgrade (NSTX-U). All three are flat-field grazing-incidence spectrometers and are dubbed X-ray and Extreme Ultraviolet Spectrometer (XEUS, 8–70 Å), Long-Wavelength Extreme Ultraviolet Spectrometer (LoWEUS, 190–440 Å), and Metal Monitor and Lithium Spectrometer Assembly (MonaLisa, 50–220 Å). XEUS and LoWEUS were previously implemented on NSTX to monitor impurities from low- to high-Z sources and to study impurity transport while MonaLisa is new and provides the system increased spectral coverage. The spectrometers will also be a critical diagnostic on the planned laser blow-off system for NSTX-U, which will be used for impurity edge and core ion transport studies, edge-transport code development, and benchmarking atomic physics codes.

  9. Laser-assisted vacuum arc extreme ultraviolet source: a comparison of picosecond and nanosecond laser triggering

    Science.gov (United States)

    Beyene, Girum A.; Tobin, Isaac; Juschkin, Larissa; Hayden, Patrick; O'Sullivan, Gerry; Sokell, Emma; Zakharov, Vassily S.; Zakharov, Sergey V.; O'Reilly, Fergal

    2016-06-01

    Extreme ultraviolet (EUV) light generation by hybrid laser-assisted vacuum arc discharge plasmas, utilizing Sn-coated rotating-disc-electrodes, was investigated. The discharge was initiated by localized ablation of the liquid tin coating of the cathode disc by a laser pulse. The laser pulse, at 1064 nm, was generated by Nd:YAG lasers with variable energy from 1 to 100 mJ per pulse. The impact of shortening the laser pulse from 7 ns to 170 ps on the EUV generation has been investigated in detail. The use of ps pulses resulted in an increase in emission of EUV radiation. With a fixed discharge energy of ~4 J, the EUV conversion efficiency tends to plateau at ~2.4  ±  0.25% for the ps laser pulses, while for the ns pulses, it saturates at ~1.7  ±  0.3%. Under similar discharge and laser energy conditions, operating the EUV source with the ps-triggering resulted also in narrower spectral profiles of the emission in comparison to ns-triggering. The results indicate an advantage in using ps-triggering in laser-assisted discharges to produce brighter plasmas required for applications such as metrology.

  10. Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

    International Nuclear Information System (INIS)

    Brose, S.; Danylyuk, S.; Juschkin, L.; Dittberner, C.; Bergmann, K.; Moers, J.; Panaitov, G.; Trellenkamp, St.; Loosen, P.; Grützmacher, D.

    2012-01-01

    Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm). The masks and filters with free standing areas up to 1000 × 1000 μm 2 and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. - Highlights: ► Broadband transmission masks for EUV proximity and interference lithography. ► Technology for free standing niobium membranes with areas up to 1 mm 2 . ► High density patterns with periods of 100 nm and structure sizes below 40 nm. ► Measured diffraction efficiency at 11 nm is in agreement with the theory. ► Produced masks can be effectively used with wavelengths between 6 nm and 17 nm.

  11. Progress in coherent lithography using table-top extreme ultraviolet lasers

    Science.gov (United States)

    Li, Wei

    Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution

  12. Enhancement of conversion efficiency of extreme ultraviolet radiation from a liquid aqueous solution microjet target by use of dual laser pulses

    Science.gov (United States)

    Higashiguchi, Takeshi; Dojyo, Naoto; Hamada, Masaya; Kawasaki, Keita; Sasaki, Wataru; Kubodera, Shoichi

    2006-03-01

    We demonstrated a debris-free, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO II) nano-particles. By using a low SnO II concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris.

  13. Extreme Ultraviolet Emission Lines of Iron Fe XI-XIII

    Science.gov (United States)

    Lepson, Jaan; Beiersdorfer, P.; Brown, G. V.; Liedahl, D. A.; Brickhouse, N. S.; Dupree, A. K.

    2013-04-01

    The extreme ultraviolet (EUV) spectral region (ca. 20--300 Å) is rich in emission lines from low- to mid-Z ions, particularly from the middle charge states of iron. Many of these emission lines are important diagnostics for astrophysical plasmas, providing information on properties such as elemental abundance, temperature, density, and even magnetic field strength. In recent years, strides have been made to understand the complexity of the atomic levels of the ions that emit the lines that contribute to the richness of the EUV region. Laboratory measurements have been made to verify and benchmark the lines. Here, we present laboratory measurements of Fe XI, Fe XII, and Fe XIII between 40-140 Å. The measurements were made at the Lawrence Livermore electron beam ion trap (EBIT) facility, which has been optimized for laboratory astrophysics, and which allows us to select specific charge states of iron to help line identification. We also present new calculations by the Hebrew University - Lawrence Livermore Atomic Code (HULLAC), which we also utilized for line identification. We found that HULLAC does a creditable job of reproducing the forest of lines we observed in the EBIT spectra, although line positions are in need of adjustment, and line intensities often differed from those observed. We identify or confirm a number of new lines for these charge states. This work was supported by the NASA Solar and Heliospheric Program under Contract NNH10AN31I and the DOE General Plasma Science program. Work was performed in part under the auspices of the Department of Energy by Lawrence Livermore National Laboratory under Contract DEAC52-07NA27344.

  14. Time Variabilities of Solar Wind Ion Fluxes and of X-ray and EUV Emissions from Comet Hyakutake

    Science.gov (United States)

    Neugebauer, M.; Cravens, T.; Lisse, C.; Ipavich, F.; von Steiger, R.; Shah, P.; Armstrong, T.

    1999-01-01

    Observations of X-ray and extreme ultraviolet (EUV) emissions from comet C/Hyakutake 1996 B2 made by the Rontgen X-ray satellite (ROSAT) and the Extreme Ultraviolet Explorer (EUVE) revealed a total X-ray luminosity of about 500 MW.

  15. Low-defect reflective mask blanks for extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Ray-Chaudhuri, A; Walton, C.

    1999-01-01

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA road map well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm ampersand sup2; at sign 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm ampersand sup2; for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm ampersand sup2; in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10 -2 /cm ampersand sup2; level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling

  16. Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy.

    Science.gov (United States)

    Lin, Jingquan; Weber, Nils; Escher, Matthias; Maul, Jochen; Han, Hak-Seung; Merkel, Michael; Wurm, Stefan; Schönhense, Gerd; Kleineberg, Ulf

    2008-09-29

    A photoemission electron microscope based on a new contrast mechanism "interference contrast" is applied to characterize extreme ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of standing wave field) on surface of multilayer in the local region of a phase defect is necessary to obtain best visibility of the defect on mask blank. A comparative experiment reveals superiority of the interference contrast photoemission electron microscope (Extreme UV illumination) over a topographic contrast one (UV illumination with Hg discharge lamp) in detecting extreme ultraviolet mask blank phase defects. A depth-resolved detection of a mask blank defect, either by measuring anti-node peak shift in the EUV-PEEM image under varying inspection wavelength condition or by counting interference fringes with a fixed illumination wavelength, is discussed.

  17. Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

    International Nuclear Information System (INIS)

    Spector, S. J.; White, D. L.; Tennant, D. M.; Ocola, L. E.; Novembre, A. E.; Peabody, M. L.; Wood, O. R. II

    1999-01-01

    We have developed two new methods for at-wavelength inspection of mask blanks for extreme-ultraviolet (EUV) lithography. In one method an EUV photoresist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. In the second method, the photoresist is applied to an EUV transparent membrane that is placed in close proximity to the mask and then exposed and developed. Both reflectivity defects and phase defects alter the exposure of the resist, resulting in mounds of resist at defect sites that can then be located by visual inspection. In the direct application method, a higher contrast resist was shown to increase the height of the mounds, thereby improving the sensitivity of the technique. In the membrane method, a holographic technique was used to reconstruct an image of the mask, revealing the presence of very small defects, approximately 0.2 μm in size. The demonstrated clean transfer of phase and amplitude defects to resist features on a membrane will be important when flagging defects in an automatic inspection tool. (c) 1999 American Vacuum Society

  18. Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

    Science.gov (United States)

    Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

    2012-03-01

    Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

  19. EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

    Science.gov (United States)

    Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

    2018-01-01

    The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

  20. Large-solid-angle illuminators for extreme ultraviolet lithography with laser plasmas

    International Nuclear Information System (INIS)

    Kubiak, G.D.; Tichenor, D.A.; Sweatt, W.C.; Chow, W.W.

    1995-06-01

    Laser Plasma Sources (LPSS) of extreme ultraviolet radiation are an attractive alternative to synchrotron radiation sources for extreme ultraviolet lithography (EUVL) due to their modularity, brightness, and modest size and cost. To fully exploit the extreme ultraviolet power emitted by such sources, it is necessary to capture the largest possible fraction of the source emission half-sphere while simultaneously optimizing the illumination stationarity and uniformity on the object mask. In this LDRD project, laser plasma source illumination systems for EUVL have been designed and then theoretically and experimentally characterized. Ellipsoidal condensers have been found to be simple yet extremely efficient condensers for small-field EUVL imaging systems. The effects of aberrations in such condensers on extreme ultraviolet (EUV) imaging have been studied with physical optics modeling. Lastly, the design of an efficient large-solid-angle condenser has been completed. It collects 50% of the available laser plasma source power at 14 nm and delivers it properly to the object mask in a wide-arc-field camera

  1. Design and performance of capping layers for extreme-ultraviolet multilayer mirrors

    International Nuclear Information System (INIS)

    Bajt, Sasa; Chapman, Henry N.; Nguyen, Nhan; Alameda, Jennifer; Robinson, Jeffrey C.; Malinowski, Michael; Gullikson, Eric; Aquila, Andrew; Tarrio, Charles; Grantham, Steven

    2003-01-01

    Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity above 69% at 13.2 nm, which is suitable for EUVL projection optics and has been tested with accelerated electron-beam and extreme-ultraviolet (EUV) light in a water-vapor environment. Based on accelerated exposure results, we calculated multilayer lifetimes for all reflective mirrors in a typical commercial EUVL tool and concluded that Ru-capped multilayers have ∼40x longer lifetimes than Si-capped multilayers, which translates to 3 months to many years, depending on the mirror dose

  2. Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

    Science.gov (United States)

    Kozawa, Takahiro; Oizumi, Hiroaki; Itani, Toshiro; Tagawa, Seiichi

    2010-11-01

    The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.

  3. Characterization of EUV induced carbon films using laser-generated surface acoustic waves

    NARCIS (Netherlands)

    Chen, Juequan; Lee, Christopher James; Louis, Eric; Bijkerk, Frederik; Kunze, Reinhard; Schmidt, Hagen; Schneider, Dieter; Moors, Roel

    2009-01-01

    The deposition of carbon layers on the surfaces of optics exposed to extreme ultraviolet (EUV) radiation has been observed in EUV lithography. It has become of critical importance to detect the presence of the carbon layer in the order of nanometer thickness due to carbon's extremely strong

  4. Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

    Science.gov (United States)

    Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

    2016-07-01

    Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated

  5. AN AUTOMATIC DETECTION METHOD FOR EXTREME-ULTRAVIOLET DIMMINGS ASSOCIATED WITH SMALL-SCALE ERUPTION

    Energy Technology Data Exchange (ETDEWEB)

    Alipour, N.; Safari, H. [Department of Physics, University of Zanjan, P.O. Box 45195-313, Zanjan (Iran, Islamic Republic of); Innes, D. E. [Max-Planck Institut fuer Sonnensystemforschung, 37191 Katlenburg-Lindau (Germany)

    2012-02-10

    Small-scale extreme-ultraviolet (EUV) dimming often surrounds sites of energy release in the quiet Sun. This paper describes a method for the automatic detection of these small-scale EUV dimmings using a feature-based classifier. The method is demonstrated using sequences of 171 Angstrom-Sign images taken by the STEREO/Extreme UltraViolet Imager (EUVI) on 2007 June 13 and by Solar Dynamics Observatory/Atmospheric Imaging Assembly on 2010 August 27. The feature identification relies on recognizing structure in sequences of space-time 171 Angstrom-Sign images using the Zernike moments of the images. The Zernike moments space-time slices with events and non-events are distinctive enough to be separated using a support vector machine (SVM) classifier. The SVM is trained using 150 events and 700 non-event space-time slices. We find a total of 1217 events in the EUVI images and 2064 events in the AIA images on the days studied. Most of the events are found between latitudes -35 Degree-Sign and +35 Degree-Sign . The sizes and expansion speeds of central dimming regions are extracted using a region grow algorithm. The histograms of the sizes in both EUVI and AIA follow a steep power law with slope of about -5. The AIA slope extends to smaller sizes before turning over. The mean velocity of 1325 dimming regions seen by AIA is found to be about 14 km s{sup -1}.

  6. Advanced materials for multilayer mirrors for extreme ultraviolet solar astronomy.

    Science.gov (United States)

    Bogachev, S A; Chkhalo, N I; Kuzin, S V; Pariev, D E; Polkovnikov, V N; Salashchenko, N N; Shestov, S V; Zuev, S Y

    2016-03-20

    We provide an analysis of contemporary multilayer optics for extreme ultraviolet (EUV) solar astronomy in the wavelength ranges: λ=12.9-13.3  nm, λ=17-21  nm, λ=28-33  nm, and λ=58.4  nm. We found new material pairs, which will make new spaceborne experiments possible due to the high reflection efficiencies, spectral resolution, and long-term stabilities of the proposed multilayer coatings. In the spectral range λ=13  nm, Mo/Be multilayer mirrors were shown to demonstrate a better ratio of reflection efficiency and spectral resolution compared with the commonly used Mo/Si. In the spectral range λ=17-21  nm, a new multilayer structure Al/Si was proposed, which had higher spectral resolution along with comparable reflection efficiency compared with the commonly used Al/Zr multilayer structures. In the spectral range λ=30  nm, the Si/B4C/Mg/Cr multilayer structure turned out to best obey reflection efficiency and long-term stability. The B4C and Cr layers prevented mutual diffusion of the Si and Mg layers. For the spectral range λ=58  nm, a new multilayer Mo/Mg-based structure was developed; its reflection efficiency and long-term stability have been analyzed. We also investigated intrinsic stresses inherent for most of the multilayer structures and proposed possibilities for stress elimination.

  7. Micro- and Nanoprocessing of Polymers Using a Laser Plasma Extreme Ultraviolet Source

    International Nuclear Information System (INIS)

    Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Kostecki, J.; Rakowski, R.; Szczurek, A.; Szczurek, M.

    2010-01-01

    Laser plasma with temperature of the order of tens eV can be an efficient source of extreme ultraviolet (EUV). The radiation can be focused using different kind of optics, giving sufficient fluence for some applications. In this work we present results of investigations concerning applications of a laser plasma EUV source based on a double stream gas puff target. The source was equipped with two different grazing incidence collectors. One of them was a multifoil collector, the second one was an axisymmetrical ellipsoidal collector. The multifoil mirror was used mainly in experiments concerning micromachining of organic polymers by direct photo-etching. The experiments were performed for different polymers that were irradiated through a fine metal grid as a contact mask. The smallest element of a pattern structure obtained in this way was 5 μm, while the structure height was 50 μm giving an aspect ratio about 10. The laser-plasma EUV source equipped with the axisymmetrical ellipsoidal collector was used for surface modification of organic polymers and inorganic solids. The surface morphology after irradiation was investigated. Different forms of micro- and nanostructures were obtained depending on material and irradiation conditions. (author)

  8. TEMPERATURE AND EXTREME-ULTRAVIOLET INTENSITY IN A CORONAL PROMINENCE CAVITY AND STREAMER

    Energy Technology Data Exchange (ETDEWEB)

    Kucera, T. A. [NASA/GSFC, Code 671, Greenbelt, MD 20771 (United States); Gibson, S. E.; Schmit, D. J. [HAO/NCAR, P.O. Box 3000, Boulder, CO 80307-3000 (United States); Landi, E. [Department of Atmospheric, Oceanic and Space Science, Space Research Building, University of Michigan, 2455 Hayward St., Ann Arbor, MI 48109-2143 (United States); Tripathi, D. [Inter-University Centre for Astronomy and Astrophysics, Post Bag-4, Ganeshkhind, Pune University Campus, Pune 411 007 (India)

    2012-09-20

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 August 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model predictions to the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) Mark 4 K-coronameter. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude-dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude-dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the EUV line intensities by a factor of 4-10, without overestimating pB. We discuss this difference in terms of filling factors and uncertainties in density diagnostics and elemental abundances.

  9. Compact 13.5-nm free-electron laser for extreme ultraviolet lithography

    Directory of Open Access Journals (Sweden)

    Y. Socol

    2011-04-01

    Full Text Available Optical lithography has been actively used over the past decades to produce more and more dense integrated circuits. To keep with the pace of the miniaturization, light of shorter and shorter wavelength was used with time. The capabilities of the present 193-nm UV photolithography were expanded time after time, but it is now believed that further progress will require deployment of extreme ultraviolet (EUV lithography based on the use of 13.5-nm radiation. However, presently no light source exists with sufficient average power to enable high-volume manufacturing. We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energy-recovery linac (ERL. The proposed 40×20  m^{2} facility, using MW-scale consumption from the power grid, is estimated to provide about 5 kW of average EUV power. We elaborate the self-amplified spontaneous emission (SASE option, which is presently technically feasible. A regenerative-amplifier option is also discussed. The proposed design is based on a short-period (2–3 cm undulator. The corresponding electron beam energy is about 0.5–1.0 GeV. The proposed accelerator consists of a photoinjector, a booster, and a multiturn ERL.

  10. THE INFLUENCE OF THE EXTREME ULTRAVIOLET SPECTRAL ENERGY DISTRIBUTION ON THE STRUCTURE AND COMPOSITION OF THE UPPER ATMOSPHERE OF EXOPLANETS

    Energy Technology Data Exchange (ETDEWEB)

    Guo, J. H. [Yunnan Observatories, Chinese Academy of Sciences, P.O. Box 110, Kunming 650011 (China); Ben-Jaffel, Lotfi, E-mail: guojh@ynao.ac.cn, E-mail: bjaffel@iap.fr [Sorbonne Universités, UPMC Univ. Paris 6 et CNRS, UMR 7095, Institut Astrophysique de Paris, F-75014 Paris (France)

    2016-02-20

    By varying the profiles of stellar extreme ultraviolet (EUV) spectral energy distributions (SEDs), we tested the influences of stellar EUV SEDs on the physical and chemical properties of an escaping atmosphere. We apply our model to study four exoplanets: HD 189733b, HD 209458b, GJ 436b, and Kepler-11b. We find that the total mass loss rates of an exoplanet, which are determined mainly by the integrated fluxes, are moderately affected by the profiles of the EUV SED, but the composition and species distributions in the atmosphere can be dramatically modified by the different profiles of the EUV SED. For exoplanets with a high hydrodynamic escape parameter (λ), the amount of atomic hydrogen produced by photoionization at different altitudes can vary by one to two orders of magnitude with the variation of stellar EUV SEDs. The effect of photoionization of H is prominent when the EUV SED is dominated by the low-energy spectral region (400–900 Å), which pushes the transition of H/H{sup +} to low altitudes. In contrast, the transition of H/H{sup +} moves to higher altitudes when most photons are concentrated in the high-energy spectral region (50–400 Å). For exoplanets with a low λ, the lower temperatures of the atmosphere make many chemical reactions so important that photoionization alone can no longer determine the composition of the escaping atmosphere. For HD 189733b, it is possible to explain the time variability of Lyα between 2010 and 2011 by a change in the EUV SED of the host K-type star, yet invoking only thermal H i in the atmosphere.

  11. Extreme ultraviolet observations of coronal holes. II

    International Nuclear Information System (INIS)

    Bohlin, J.D.; Sheeley, N.R. Jr.

    1978-01-01

    Extreme-ultraviolet Skylab and ground-based solar magnetic field data have been combined to study the origin and evolution of coronal holes. It is shown that holes exist only within the large-scale unipolar magnetic cells into which the solar surface is divided at any given time. A well-defined boundary zone usually exists between the edge of a hole and the neutral line which marks the edge of its magnetic cell. This boundary zone is the region across which a cell is connected by magnetic arcades with adjacent cells of opposite polarity. Three pieces of observational evidence are offered to support the hypothesis that the magnetic lines of force from a hole are open. Kitt Peak magnetograms are used to show that, at least on a relative scale, the average field strengths within holes are quite variable, but indistinguishable from the field strengths in other quiet parts of the Sun's surface. Finally it is shown that the large, equatorial holes characteristic of the declining phase of the last solar cycle during Skylab (1973-74) were all formed as a result of the mergence of bipolar magnetic regions (BMR's), confirming an earlier hypothesis by Timothy et al. (1975). Systematic application of this model to the different aspects of the solar cycle correctly predicts the occurrence of both large, equatorial coronal holes (the 'M-regions' which cause recurrent geomagnetic storms) and the polar cap holes. (Auth.)

  12. Reflective masks for extreme ultraviolet lithography

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Khanh Bao [Univ. of California, Berkeley, CA (United States)

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  13. An extreme ultraviolet wave associated with a failed eruption observed by the Solar Dynamics Observatory

    Science.gov (United States)

    Zheng, R.; Jiang, Y.; Yang, J.; Bi, Y.; Hong, J.; Yang, B.; Yang, D.

    2012-05-01

    Aims: Taking advantage of the high temporal and spatial resolution of the Solar Dynamics Observatory (SDO) observations, we present an extreme ultraviolet (EUV) wave associated with a failed filament eruption that generated no coronal mass ejection (CME) on 2011 March 1. We aim at understanding the nature and origin of this EUV wave. Methods: Combining the high-quality observations in the photosphere, the chromosphere, and the corona, we studied the characteristics of the wave and its relations to the associated eruption. Results: The event occurred at an ephemeral region near a small active region. The continuous magnetic flux cancelation in the ephemeral region produced pre-eruption brightenings and two EUV jets, and excited the filament eruption, accompanying it with a microflare. After the eruption, the filament material appeared far from the eruption center, and the ambient loops seemed to be intact. It was evident that the filament eruption had failed and was not associated with a CME. The wave happened just after the north jet arrived, and apparently emanated ahead of the north jet, far from the eruption center. The wave propagated at nearly constant velocities in the range of 260-350 km s-1, with a slight negative acceleration in the last phase. Remarkably, the wave continued to propagate, and a loop in its passage was intact when wave and loop met. Conclusions: Our analysis confirms that the EUV wave is a true wave, which we interpret as a fast-mode wave. In addition, the close temporal and spatial relationship between the wave and the jet provides evidence that the wave was likely triggered by the jet when the CME failed to happen. Three movies are available in electronic form at http://www.aanda.org

  14. Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

    Science.gov (United States)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2013-04-01

    As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

  15. Nanoscale inhomogeneity and photoacid generation dynamics in extreme ultraviolet resist materials

    Science.gov (United States)

    Wu, Ping-Jui; Wang, Yu-Fu; Chen, Wei-Chi; Wang, Chien-Wei; Cheng, Joy; Chang, Vencent; Chang, Ching-Yu; Lin, John; Cheng, Yuan-Chung

    2018-03-01

    The development of extreme ultraviolet (EUV) lithography towards the 22 nm node and beyond depends critically on the availability of resist materials that meet stringent control requirements in resolution, line edge roughness, and sensitivity. However, the molecular mechanisms that govern the structure-function relationships in current EUV resist systems are not well understood. In particular, the nanoscale structures of the polymer base and the distributions of photoacid generators (PAGs) should play a critical roles in the performance of a resist system, yet currently available models for photochemical reactions in EUV resist systems are exclusively based on homogeneous bulk models that ignore molecular-level details of solid resist films. In this work, we investigate how microscopic molecular organizations in EUV resist affect photoacid generations in a bottom-up approach that describes structure-dependent electron-transfer dynamics in a solid film model. To this end, molecular dynamics simulations and stimulated annealing are used to obtain structures of a large simulation box containing poly(4-hydroxystyrene) (PHS) base polymers and triphenylsulfonium based PAGs. Our calculations reveal that ion-pair interactions govern the microscopic distributions of the polymer base and PAG molecules, resulting in a highly inhomogeneous system with nonuniform nanoscale chemical domains. Furthermore, the theoretical structures were used in combination of quantum chemical calculations and the Marcus theory to evaluate electron transfer rates between molecular sites, and then kinetic Monte Carlo simulations were carried out to model electron transfer dynamics with molecular structure details taken into consideration. As a result, the portion of thermalized electrons that are absorbed by the PAGs and the nanoscale spatial distribution of generated acids can be estimated. Our data reveal that the nanoscale inhomogeneous distributions of base polymers and PAGs strongly affect the

  16. Formation dynamics of UV and EUV induced hydrogen plasma

    NARCIS (Netherlands)

    Dolgov, A.A.; Lee, Christopher James; Yakushev, O.; Lopaev, D.V.; Abrikosov, A.; Krivtsun, V.M.; Zotovich, A.; Bijkerk, F.

    2014-01-01

    The comparative study of the dynamics of ultraviolet (UV) and extreme ultraviolet (EUV) induced hydrogen plasma was performed. It was shown that for low H2 pressures and bias voltages, the dynamics of the two plasmas are significantly different. In the case of UV radiation, the plasma above the

  17. Oxidation and metal contamination of EUV optics

    NARCIS (Netherlands)

    Sturm, Jacobus Marinus; Liu, Feng; Pachecka, Malgorzata; Lee, Christopher James; Bijkerk, Frederik

    2013-01-01

    The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) for printing smaller features on chips. One of the hallenges is to optimally control the contamination of the multilayer mirrors used in the imaging system. The aim of this project is generating fundamental understanding

  18. EUV spectrum of highly charged tungsten ions in electron beam ion trap

    International Nuclear Information System (INIS)

    Sakaue, H.A.; Kato, D.; Murakami, I.; Nakamura, N.

    2016-01-01

    We present spectra of highly charged tungsten ions in the extreme ultra-violet (EUV) by using electron beam ion traps. The electron energy dependence of spectra was investigated for electron energy from 540 to 1370 eV. Previously unreported lines were presented in the EUV range, and comparing the wavelengths with theoretical calculations identified them. (author)

  19. EUV multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror

    NARCIS (Netherlands)

    Huang, Qiushi; Louis, Eric; Bijkerk, Frederik; de Boer, Meint J.; von Blanckenhagen, G.

    2016-01-01

    A multilayer mirror (M) reflecting extreme ultraviolet (EUV) radiation from a first wave-length range in a EUV spectral region comprises a substrate (SUB) and a stack of layers (SL) on the substrate, the stack of layers comprising layers comprising a low index material and a high index material, the

  20. Characterizing dusty argon-acetylene plasmas as a first step to understand dusty EUV environments

    NARCIS (Netherlands)

    Wetering, van de F.M.J.H.; Nijdam, S.; Kroesen, G.M.W.

    2012-01-01

    In extreme ultraviolet (EUV) lithography, ionic and particulate debris coming from the plasma source plays an important role. We started up a project looking at the principles of particle formation in plasmas and the interaction with EUV radiation. To this end, we study a low-pressure (10 Pa)

  1. Development of a thinned back-illuminated CMOS active pixel sensor for extreme ultraviolet spectroscopy and imaging in space science

    International Nuclear Information System (INIS)

    Waltham, N.R.; Prydderch, M.; Mapson-Menard, H.; Pool, P.; Harris, A.

    2007-01-01

    We describe our programme to develop a large-format, science-grade, monolithic CMOS active pixel sensor for future space science missions, and in particular an extreme ultraviolet (EUV) spectrograph for solar physics studies on ESA's Solar Orbiter. Our route to EUV sensitivity relies on adapting the back-thinning and rear-illumination techniques first developed for CCD sensors. Our first large-format sensor consists of 4kx3k 5 μm pixels fabricated on a 0.25 μm CMOS imager process. Wafer samples of these sensors have been thinned by e2v technologies with the aim of obtaining good sensitivity at EUV wavelengths. We present results from both front- and back-illuminated versions of this sensor. We also present our plans to develop a new sensor of 2kx2k 10 μm pixels, which will be fabricated on a 0.35 μm CMOS process. In progress towards this goal, we have designed a test-structure consisting of six arrays of 512x512 10 μm pixels. Each of the arrays has been given a different pixel design to allow verification of our models, and our progress towards optimizing a design for minimal system readout noise and maximum dynamic range. These sensors will also be back-thinned for characterization at EUV wavelengths

  2. EUV lithography

    CERN Document Server

    Bakshi, Vivek

    2018-01-01

    Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current 193-nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists. This book covers the fundamental and latest status of all aspects of EUVL used in the field. Since 2008, when SPIE Press published the first edition of EUVL Lithography, much progress has taken place in the development of EUVL as the choice technology for next-generation lithography. In 2008, EUVL was a prime contender to replace 193-nm-based optical lithography in leading-edge computer chip making, but not everyone was convinced at that point. Switching from 193-nm to 13.5-nm wavelengths was a much bigger jump than the industry had attempted before. It brought several difficult challenges in all areas of lithography-light source, scanner, mask, mask handling, optics, optics metrology, resist, c...

  3. Efficient extreme ultraviolet plasma source generated by a CO2 laser and a liquid xenon microjet target

    Science.gov (United States)

    Ueno, Yoshifumi; Ariga, Tatsuya; Soumagne, George; Higashiguchi, Takeshi; Kubodera, Shoichi; Pogorelsky, Igor; Pavlishin, Igor; Stolyarov, Daniil; Babzien, Marcus; Kusche, Karl; Yakimenko, Vitaly

    2007-05-01

    We demonstrated efficacy of a CO2-laser-produced xenon plasma in the extreme ultraviolet (EUV) spectral region at 13.5nm at variable laser pulse widths between 200ps and 25ns. The plasma target was a 30μm liquid xenon microjet. To ensure the optimum coupling of CO2 laser energy with the plasma, they applied a prepulse yttrium aluminum garnet laser. The authors measured the conversion efficiency (CE) of the 13.5nm EUV emission for different pulse widths of the CO2 laser. A maximum CE of 0.6% was obtained for a CO2 laser pulse width of 25ns at an intensity of 5×1010W/cm2.

  4. Efficient extreme ultraviolet plasma source generated by a CO2 laser and a liquid xenon microjet target

    International Nuclear Information System (INIS)

    Ueno, Yoshifumi; Ariga, Tatsuya; Soumagne, George; Higashiguchi, Takeshi; Kubodera, Shoichi; Pogorelsky, Igor; Pavlishin, Igor; Stolyarov, Daniil; Babzien, Marcus; Kusche, Karl; Yakimenko, Vitaly

    2007-01-01

    We demonstrated efficacy of a CO 2 -laser-produced xenon plasma in the extreme ultraviolet (EUV) spectral region at 13.5 nm at variable laser pulse widths between 200 ps and 25 ns. The plasma target was a 30 μm liquid xenon microjet. To ensure the optimum coupling of CO 2 laser energy with the plasma, they applied a prepulse yttrium aluminum garnet laser. The authors measured the conversion efficiency (CE) of the 13.5 nm EUV emission for different pulse widths of the CO 2 laser. A maximum CE of 0.6% was obtained for a CO 2 laser pulse width of 25 ns at an intensity of 5x10 10 W/cm 2

  5. FIBRILLAR CHROMOSPHERIC SPICULE-LIKE COUNTERPARTS TO AN EXTREME-ULTRAVIOLET AND SOFT X-RAY BLOWOUT CORONAL JET

    International Nuclear Information System (INIS)

    Sterling, Alphonse C.; Moore, Ronald L.; Harra, Louise K.

    2010-01-01

    We observe an erupting jet feature in a solar polar coronal hole, using data from Hinode/Solar Optical Telescope (SOT), Extreme Ultraviolet Imaging Spectrometer (EIS), and X-Ray Telescope (XRT), with supplemental data from STEREO/EUVI. From extreme-ultraviolet (EUV) and soft X-ray (SXR) images we identify the erupting feature as a blowout coronal jet: in SXRs it is a jet with a bright base, and in EUV it appears as an eruption of relatively cool (∼50,000 K) material of horizontal size scale ∼30'' originating from the base of the SXR jet. In SOT Ca II H images, the most pronounced analog is a pair of thin (∼1'') ejections at the locations of either of the two legs of the erupting EUV jet. These Ca II features eventually rise beyond 45'', leaving the SOT field of view, and have an appearance similar to standard spicules except that they are much taller. They have velocities similar to that of 'type II' spicules, ∼100 km s -1 , and they appear to have spicule-like substructures splitting off from them with horizontal velocity ∼50 km s -1 , similar to the velocities of splitting spicules measured by Sterling et al. Motions of splitting features and of other substructures suggest that the macroscopic EUV jet is spinning or unwinding as it is ejected. This and earlier work suggest that a subpopulation of Ca II type II spicules are the Ca II manifestation of portions of larger scale erupting magnetic jets. A different subpopulation of type II spicules could be blowout jets occurring on a much smaller horizontal size scale than the event we observe here.

  6. Laboratory calibration of density-dependent lines in the extreme ultraviolet spectral region

    Science.gov (United States)

    Lepson, J. K.; Beiersdorfer, P.; Gu, M. F.; Desai, P.; Bitter, M.; Roquemore, L.; Reinke, M. L.

    2012-05-01

    We have been making spectral measurements in the extreme ultraviolet (EUV) from different laboratory sources in order to investigate the electron density dependence of various astrophysically important emission lines and to test the atomic models underlying the diagnostic line ratios. The measurement are being performed at the Livermore EBIT-I electron beam ion trap, the National Spherical Torus Experiment (NSTX) at Princeton, and the Alcator C-Mod tokamak at the Massachusetts Institute of Technology, which together span an electron density of four orders of magnitude and which allow us to test the various models at high and low density limits. Here we present measurements of Fe XXII and Ar XIV, which include new data from an ultra high resolution (λ/Δλ >4000) spectrometer at the EBIT-I facility. We found good agreement between the measurements and modeling calculations for Fe XXII, but poorer agreement for Ar XIV.

  7. A volume-limited ROSAT survey of extreme ultraviolet emission from all nondegenerate stars within 10 parsecs

    Science.gov (United States)

    Wood, Brian E.; Brown, Alexander; Linsky, Jeffrey L.; Kellett, Barry J.; Bromage, Gordon E.; Hodgkin, Simon T.; Pye, John P.

    1994-01-01

    We report the results of a volume-limited ROSAT Wide Field Camera (WFC) survey of all nondegenerate stars within 10 pc. Of the 220 known star systems within 10 pc, we find that 41 are positive detections in at least one of the two WFC filter bandpasses (S1 and S2), while we consider another 14 to be marginal detections. We compute X-ray luminosities for the WFC detections using Einstein Imaging Proportional Counter (IPC) data, and these IPC luminosities are discussed along with the WFC luminosities throughout the paper for purposes of comparison. Extreme ultraviolet (EUV) luminosity functions are computed for single stars of different spectral types using both S1 and S2 luminosities, and these luminosity functions are compared with X-ray luminosity functions derived by previous authors using IPC data. We also analyze the S1 and S2 luminosity functions of the binary stars within 10 pc. We find that most stars in binary systems do not emit EUV radiation at levels different from those of single stars, but there may be a few EUV-luminous multiple-star systems which emit excess EUV radiation due to some effect of binarity. In general, the ratio of X-ray luminosity to EUV luminosity increases with increasing coronal emission, suggesting that coronally active stars have higher coronal temperatures. We find that our S1, S2, and IPC luminosities are well correlated with rotational velocity, and we compare activity-rotation relations determined using these different luminosities. Late M stars are found to be significantly less luminous in the EUV than other late-type stars. The most natural explanation for this results is the concept of coronal saturation -- the idea that late-type stars can emit only a limited fraction of their total luminosity in X-ray and EUV radiation, which means stars with very low bolometric luminosities must have relatively low X-ray and EUV luminosities as well. The maximum level of coronal emission from stars with earlier spectral types is studied

  8. Design considerations of 10 kW-scale, extreme ultraviolet SASE FEL for lithography

    CERN Document Server

    Pagani, C; Schneidmiller, E A; Yurkov, M V

    2001-01-01

    The semiconductor industry growth is driven to a large extent by steady advancements in microlithography. According to the newly updated industry road map, the 70 nm generation is anticipated to be available in the year 2008. However, the path to get there is not clear. The problem of construction of extreme ultraviolet (EUV) quantum lasers for lithography is still unsolved: progress in this field is rather moderate and we cannot expect a significant breakthrough in the near future. Nevertheless, there is clear path for optical lithography to take us to sub-100 nm dimensions. Theoretical and experimental work in Self-Amplified Spontaneous Emission (SASE) Free Electron Lasers (FEL) physics and the physics of superconducting linear accelerators over the last 10 years has pointed to the possibility of the generation of high-power optical beams with laser-like characteristics in the EUV spectral range. Recently, there have been important advances in demonstrating a high-gain SASE FEL at 100 nm wavelength (J. Andr...

  9. Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

    Science.gov (United States)

    Fallica, Roberto; Stowers, Jason K.; Grenville, Andrew; Frommhold, Andreas; Robinson, Alex P. G.; Ekinci, Yasin

    2016-07-01

    The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.

  10. Analysis of buried interfaces in multilayer mirrors using grazing incidence extreme ultraviolet reflectometry near resonance edges.

    Science.gov (United States)

    Sertsu, M G; Nardello, M; Giglia, A; Corso, A J; Maurizio, C; Juschkin, L; Nicolosi, P

    2015-12-10

    Accurate measurements of optical properties of multilayer (ML) mirrors and chemical compositions of interdiffusion layers are particularly challenging to date. In this work, an innovative and nondestructive experimental characterization method for multilayers is discussed. The method is based on extreme ultraviolet (EUV) reflectivity measurements performed on a wide grazing incidence angular range at an energy near the absorption resonance edge of low-Z elements in the ML components. This experimental method combined with the underlying physical phenomenon of abrupt changes of optical constants near EUV resonance edges enables us to characterize optical and structural properties of multilayers with high sensitivity. A major advantage of the method is to perform detailed quantitative analysis of buried interfaces of multilayer structures in a nondestructive and nonimaging setup. Coatings of Si/Mo multilayers on a Si substrate with period d=16.4  nm, number of bilayers N=25, and different capping structures are investigated. Stoichiometric compositions of Si-on-Mo and Mo-on-Si interface diffusion layers are derived. Effects of surface oxidation reactions and carbon contaminations on the optical constants of capping layers and the impact of neighboring atoms' interactions on optical responses of Si and Mo layers are discussed.

  11. Thermal conduction properties of Mo/Si multilayers for extreme ultraviolet optics

    Science.gov (United States)

    Bozorg-Grayeli, Elah; Li, Zijian; Asheghi, Mehdi; Delgado, Gil; Pokrovsky, Alexander; Panzer, Matthew; Wack, Daniel; Goodson, Kenneth E.

    2012-10-01

    Extreme ultraviolet (EUV) lithography requires nanostructured optical components, whose reliability can be influenced by radiation absorption and thermal conduction. Thermal conduction analysis is complicated by sub-continuum electron and phonon transport and the lack of thermal property data. This paper measures and interprets thermal property data, and their evolution due to heating exposure, for Mo/Si EUV mirrors with 6.9 nm period and Mo/Si thickness ratios of 0.4/0.6 and 0.6/0.4. We use time-domain thermoreflectance and the 3ω method to estimate the thermal resistance between the Ru capping layer and the Mo/Si multilayers (RRu-Mo/Si = 1.5 m2 K GW-1), as well as the out-of-plane thermal conductivity (kMo/Si 1.1 W m-1 K-1) and thermal anisotropy (η = 13). This work also reports the impact of annealing on thermal conduction in a co-deposited MoSi2 layer, increasing the thermal conductivity from 1.7 W m-1 K-1 in the amorphous phase to 2.8 W m-1 K-1 in the crystalline phase.

  12. On the Importance of the Flare's Late Phase for the Solar Extreme Ultraviolet Irradiance

    Science.gov (United States)

    Woods, Thomas N.; Eparvier, Frank; Jones, Andrew R.; Hock, Rachel; Chamberlin, Phillip C.; Klimchuk, James A.; Didkovsky, Leonid; Judge, Darrell; Mariska, John; Bailey, Scott; hide

    2011-01-01

    The new solar extreme ultraviolet (EUV) irradiance observations from NASA Solar Dynamics Observatory (SDO) have revealed a new class of solar flares that are referred to as late phase flares. These flares are characterized by the hot 2-5 MK coronal emissions (e.g., Fe XVI 33.5 nm) showing large secondary peaks that appear many minutes to hours after an eruptive flare event. In contrast, the cool 0.7-1.5 MK coronal emissions (e.g., Fe IX 17.1 nm) usually dim immediately after the flare onset and do not recover until after the delayed second peak of the hot coronal emissions. We refer to this period of 1-5 hours after the fl amrea sin phase as the late phase, and this late phase is uniquely different than long duration flares associated with 2-ribbon flares or large filament eruptions. Our analysis of the late phase flare events indicates that the late phase involves hot coronal loops near the flaring region, not directly related to the original flaring loop system but rather with the higher post-eruption fields. Another finding is that space weather applications concerning Earth s ionosphere and thermosphere need to consider these late phase flares because they can enhance the total EUV irradiance flare variation by a factor of 2 when the late phase contribution is included.

  13. Extreme ultraviolet emission and confinement of tin plasmas in the presence of a magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Amitava, E-mail: roy@fzu.cz, E-mail: aroy@barc.gov.in [School of Nuclear Engineering and Center for Materials Under Extreme Environment(CMUXE), Purdue University, West Lafayette, Indiana 47907 (United States); HiLASE Project, Department of Diode-pumped Lasers, Institute of Physics of the ASCR, Na Slovance 2, 18221 Prague (Czech Republic); Murtaza Hassan, Syed; Harilal, Sivanandan S.; Hassanein, Ahmed [School of Nuclear Engineering and Center for Materials Under Extreme Environment(CMUXE), Purdue University, West Lafayette, Indiana 47907 (United States); Endo, Akira; Mocek, Tomas [HiLASE Project, Department of Diode-pumped Lasers, Institute of Physics of the ASCR, Na Slovance 2, 18221 Prague (Czech Republic)

    2014-05-15

    We investigated the role of a guiding magnetic field on extreme ultraviolet (EUV) and ion emission from a laser produced Sn plasma for various laser pulse duration and intensity. For producing plasmas, planar slabs of pure Sn were irradiated with 1064 nm, Nd:YAG laser pulses with varying pulse duration (5–15 ns) and intensity. A magnetic trap was fabricated with the use of two neodymium permanent magnets which provided a magnetic field strength ∼0.5 T along the plume expansion direction. Our results indicate that the EUV conversion efficiency do not depend significantly on applied axial magnetic field. Faraday Cup ion analysis of Sn plasma show that the ion flux reduces by a factor of ∼5 with the application of an axial magnetic field. It was found that the plasma plume expand in the lateral direction with peak velocity measured to be ∼1.2 cm/μs and reduced to ∼0.75 cm/μs with the application of an axial magnetic field. The plume expansion features recorded using fast photography in the presence and absence of 0.5 T axial magnetic field are simulated using particle-in-cell code. Our simulation results qualitatively predict the plasma behavior.

  14. Mode Conversion of a Solar Extreme-ultraviolet Wave over a Coronal Cavity

    Energy Technology Data Exchange (ETDEWEB)

    Zong, Weiguo [Key Laboratory of Space Weather, National Center for Space Weather, China Meteorological Administration, Beijing 100081 (China); Dai, Yu, E-mail: ydai@nju.edu.cn [Key Laboratory of Modern Astronomy and Astrophysics (Nanjing University), Ministry of Education, Nanjing 210023 (China)

    2017-01-10

    We report on observations of an extreme-ultraviolet (EUV) wave event in the Sun on 2011 January 13 by Solar Terrestrial Relations Observatory and Solar Dynamics Observatory in quadrature. Both the trailing edge and the leading edge of the EUV wave front in the north direction are reliably traced, revealing generally compatible propagation velocities in both perspectives and a velocity ratio of about 1/3. When the wave front encounters a coronal cavity near the northern polar coronal hole, the trailing edge of the front stops while its leading edge just shows a small gap and extends over the cavity, meanwhile getting significantly decelerated but intensified. We propose that the trailing edge and the leading edge of the northward propagating wave front correspond to a non-wave coronal mass ejection component and a fast-mode magnetohydrodynamic wave component, respectively. The interaction of the fast-mode wave and the coronal cavity may involve a mode conversion process, through which part of the fast-mode wave is converted to a slow-mode wave that is trapped along the magnetic field lines. This scenario can reasonably account for the unusual behavior of the wave front over the coronal cavity.

  15. Probing the Production of Extreme-ultraviolet Late-phase Solar Flares Using the Model Enthalpy-based Thermal Evolution of Loops

    Science.gov (United States)

    Dai, Yu; Ding, Mingde

    2018-04-01

    Recent observations in extreme-ultraviolet (EUV) wavelengths reveal an EUV late phase in some solar flares that is characterized by a second peak in warm coronal emissions (∼3 MK) several tens of minutes to a few hours after the soft X-ray (SXR) peak. Using the model enthalpy-based thermal evolution of loops (EBTEL), we numerically probe the production of EUV late-phase solar flares. Starting from two main mechanisms of producing the EUV late phase, i.e., long-lasting cooling and secondary heating, we carry out two groups of numerical experiments to study the effects of these two processes on the emission characteristics in late-phase loops. In either of the two processes an EUV late-phase solar flare that conforms to the observational criteria can be numerically synthesized. However, the underlying hydrodynamic and thermodynamic evolutions in late-phase loops are different between the two synthetic flare cases. The late-phase peak due to a long-lasting cooling process always occurs during the radiative cooling phase, while that powered by a secondary heating is more likely to take place in the conductive cooling phase. We then propose a new method for diagnosing the two mechanisms based on the shape of EUV late-phase light curves. Moreover, from the partition of energy input, we discuss why most solar flares are not EUV late flares. Finally, by addressing some other factors that may potentially affect the loop emissions, we also discuss why the EUV late phase is mainly observed in warm coronal emissions.

  16. Study of CD variation caused by the black border effect and out-of-band radiation in extreme ultraviolet lithography

    Science.gov (United States)

    Gao, Weimin; Niroomand, Ardavan; Lorusso, Gian F.; Boone, Robert; Lucas, Kevin; Demmerle, Wolfgang

    2014-04-01

    Although extreme ultraviolet lithography (EUVL) remains a promising candidate for semiconductor device manufacturing of the 1× nm half pitch node and beyond, many technological burdens have to be overcome. The "field edge effect" in EUVL is one of them. The image border region of an EUV mask, also known as the "black border" (BB), reflects a few percent of the incident EUV light, resulting in a leakage of light into neighboring exposure fields, especially at the corner of the field where three adjacent exposures take place. This effect significantly impacts on critical dimension (CD) uniformity (CDU) across the exposure field. To avoid this phenomenon, a light-shielding border is introduced by etching away the entire absorber and multilayer at the image border region of the EUV mask. We present a method of modeling the field edge effect (also called the BB effect) by using rigorous lithography simulation with a calibrated resist model. An additional "flare level" at the field edge is introduced on top of the exposure tool flare map to account for the BB effect. The parameters in this model include the reflectivity and the width of the BB, which are mainly determining the leakage of EUV light and its influence range, respectively. Another parameter is the transition width which represents the half shadow effect of the reticle masking blades. By setting the corresponding parameters, the simulation results match well the experimental results obtained at the IMEC's NXE:3100 EUV exposure tool. Moreover, these results indicate that the out-of-band (OoB) radiation also contributes to the CDU. Using simulation, we can also determine the OoB effect rigorously using the methodology of an "effective mask blank." The study demonstrates that the impact of BB and OoB effects on CDU can be well predicted by simulations.

  17. Fundamentals of EUV resist-inorganic hardmask interactions

    Science.gov (United States)

    Goldfarb, Dario L.; Glodde, Martin; De Silva, Anuja; Sheshadri, Indira; Felix, Nelson M.; Lionti, Krystelle; Magbitang, Teddie

    2017-03-01

    High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin (<5nm) inorganic HMs can provide higher etch selectivity, lower post-etch LWR, decreased defectivity and wet strippability compared to spin-on hybrid HMs (e.g., SiARC), however such novel layers can induce resist adhesion failure and resist residue. Therefore, a fundamental understanding of EUV resist-inorganic HM interactions is needed in order to optimize the EUV resist interfacial behavior. In this paper, novel materials and processing techniques are introduced to characterize and improve the EUV resist-inorganic HM interface. HM surface interactions with specific EUV resist components are evaluated for open-source experimental resist formulations dissected into its individual additives using EUV contrast curves as an effective characterization method to determine post-development residue formation. Separately, an alternative adhesion promoter platform specifically tailored for a selected ultrathin inorganic HM based on amorphous silicon (aSi) is presented and the mitigation of resist delamination is exemplified for the cases of positive-tone and negative-tone development (PTD, NTD). Additionally, original wafer priming hardware for the deposition of such novel adhesion promoters is unveiled. The lessons learned in this work can be directly applied to the engineering of EUV resist materials and processes specifically designed to work on such novel HMs.

  18. Analytical techniques for mechanistic characterization of EUV photoresists

    Science.gov (United States)

    Grzeskowiak, Steven; Narasimhan, Amrit; Murphy, Michael; Ackerman, Christian; Kaminsky, Jake; Brainard, Robert L.; Denbeaux, Greg

    2017-03-01

    Extreme ultraviolet (EUV, 13.5 nm) lithography is the prospective technology for high volume manufacturing by the microelectronics industry. Significant strides towards achieving adequate EUV source power and availability have been made recently, but a limited rate of improvement in photoresist performance still delays the implementation of EUV. Many fundamental questions remain to be answered about the exposure mechanisms of even the relatively well understood chemically amplified EUV photoresists. Moreover, several groups around the world are developing revolutionary metal-based resists whose EUV exposure mechanisms are even less understood. Here, we describe several evaluation techniques to help elucidate mechanistic details of EUV exposure mechanisms of chemically amplified and metal-based resists. EUV absorption coefficients are determined experimentally by measuring the transmission through a resist coated on a silicon nitride membrane. Photochemistry can be evaluated by monitoring small outgassing reaction products to provide insight into photoacid generator or metal-based resist reactivity. Spectroscopic techniques such as thin-film Fourier transform infrared (FTIR) spectroscopy can measure the chemical state of a photoresist system pre- and post-EUV exposure. Additionally, electrolysis can be used to study the interaction between photoresist components and low energy electrons. Collectively, these techniques improve our current understanding of photomechanisms for several EUV photoresist systems, which is needed to develop new, better performing materials needed for high volume manufacturing.

  19. Calibration of windowless photodiode for extreme ultraviolet pulse energy measurement

    Czech Academy of Sciences Publication Activity Database

    Koláček, Karel; Schmidt, Jiří; Štraus, Jaroslav; Frolov, Oleksandr

    2015-01-01

    Roč. 54, č. 35 (2015), s. 10454-10459 ISSN 1559-128X R&D Projects: GA MŠk(CZ) LG13029 Institutional support: RVO:61389021 Keywords : Photodetectors * Soft-X-ray * Extreme ultraviolet * Detection * Filters * Metrology Subject RIV: BH - Optics , Masers, Lasers Impact factor: 1.598, year: 2015

  20. Maximum material thickness for extreme ultra-violet and X-ray backlighter probing of dense plasma

    International Nuclear Information System (INIS)

    Huang, H.; Tallents, G.J.

    2008-01-01

    Extreme ultra-violet (EUV) lasers, X-ray lasers and other backlighter sources can be used to probe high-energy density materials if their brightness can overcome self-emission from the material. We investigate the maximum plasma thickness of aluminum, silicon and iron that can be probed with EUV or X-ray photons of energy 89-1243 eV before self-emission from the plasma overwhelms the backlighter output. For a uniform plasma, backlighter transmission decreases exponentially with increasing thickness of the material following Beer's law at a rate dependent on the plasma opacity. We evaluate the plasma opacity with the Los Alamos TOPS opacity data. The self-emission is assumed to be either that of a black body to arise from a plasma in LTE or to only consist of free-free and free-bound emission. It is shown that at higher plasma temperature (≥40 eV), EUV radiation (e.g. photon energy=89 eV) can probe a greater thickness of plasma than X-ray radiation (e.g. photon energy=1243 eV)

  1. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    Energy Technology Data Exchange (ETDEWEB)

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus [Laser-Laboratorium-Goettingen e.V., Hans-Adolf-Krebs-Weg 1, D-37077 Goettingen (Germany); John, Joachim; Malinowski, Pawel E. [Interuniversity MicroElectronic Center (IMEC), Kapeldreef 75, B-3001 Leuven (Belgium)

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  2. Broadband transmission grating spectrometer for measuring the emission spectrum of EUV sources

    NARCIS (Netherlands)

    Bayraktar, Muharrem; Bastiaens, Hubertus M.J.; Bruineman, Caspar; Vratzov, Boris; Bijkerk, Frederik

    2016-01-01

    Extreme ultraviolet (EUV) light sources and their optimization for emission within a narrow wavelength band are essential in applications such as photolithography. Most light sources however also emit radiation outside this wavelength band and have a spectrum extending up to deep ultraviolet (DUV)

  3. Negating HIO-induced metal and carbide EUV surface contamination

    NARCIS (Netherlands)

    Sturm, Jacobus Marinus; Gleeson, Michael; van de Kruijs, Robbert Wilhelmus Elisabeth; Lee, Christopher James; Kleyn, A.W.; Bijkerk, Frederik

    2011-01-01

    The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.

  4. Study of EUV induced defects on few-layer graphene

    NARCIS (Netherlands)

    Gao, An; Rizo, P.J.; Zoethout, E.; Scaccabarozzi, L.; Lee, Christopher James; Banine, V.; Bijkerk, Frederik

    2012-01-01

    Defects in graphene greatly affect its properties1-3. Radiation induced-defects may reduce the long-term survivability of graphene-based nano-devices. Here, we expose few-layer graphene to extreme ultraviolet (EUV, 13.5nm) radiation and show there is a power-dependent increase in defect density. We

  5. Plasma-assisted cleaning of extreme UV optics

    NARCIS (Netherlands)

    Dolgov, Alexandr Alexeevich

    2018-01-01

    Plasma-assisted cleaning of extreme UV optics EUV-induced surface plasma chemistry of photo-active agents The next generation of photolithography, extreme ultraviolet (EUV) lithography, makes use of 13.5 nm radiation. The ionizing photon flux, and vacuum requirements create a challenging operating

  6. System performance modeling of extreme ultraviolet lithographic thermal issues

    International Nuclear Information System (INIS)

    Spence, P. A.; Gianoulakis, S. E.; Moen, C. D.; Kanouff, M. P.; Fisher, A.; Ray-Chaudhuri, A. K.

    1999-01-01

    Numerical simulation is used in the development of an extreme ultraviolet lithography Engineering Test Stand. Extensive modeling was applied to predict the impact of thermal loads on key lithographic parameters such as image placement error, focal shift, and loss of CD control. We show that thermal issues can be effectively managed to ensure that their impact on lithographic performance is maintained within design error budgets. (c) 1999 American Vacuum Society

  7. Extreme-Ultraviolet Vortices from a Free-Electron Laser

    Directory of Open Access Journals (Sweden)

    Primož Rebernik Ribič

    2017-08-01

    Full Text Available Extreme-ultraviolet vortices may be exploited to steer the magnetic properties of nanoparticles, increase the resolution in microscopy, and gain insight into local symmetry and chirality of a material; they might even be used to increase the bandwidth in long-distance space communications. However, in contrast to the generation of vortex beams in the infrared and visible spectral regions, production of intense, extreme-ultraviolet and x-ray optical vortices still remains a challenge. Here, we present an in-situ and an ex-situ technique for generating intense, femtosecond, coherent optical vortices at a free-electron laser in the extreme ultraviolet. The first method takes advantage of nonlinear harmonic generation in a helical undulator, producing vortex beams at the second harmonic without the need for additional optical elements, while the latter one relies on the use of a spiral zone plate to generate a focused, micron-size optical vortex with a peak intensity approaching 10^{14}  W/cm^{2}, paving the way to nonlinear optical experiments with vortex beams at short wavelengths.

  8. Berkeley extreme-ultraviolet airglow rocket spectrometer - BEARS

    Science.gov (United States)

    Cotton, D. M.; Chakrabarti, S.

    1992-01-01

    The Berkeley EUV airglow rocket spectrometer (BEARS) instrument is described. The instrument was designed in particular to measure the dominant lines of atomic oxygen in the FUV and EUV dayglow at 1356, 1304, 1027, and 989 A, which is the ultimate source of airglow emissions. The optical and mechanical design of the instrument, the detector, electronics, calibration, flight operations, and results are examined.

  9. The Extreme Ultraviolet Flux of Very Low Mass Stars

    Science.gov (United States)

    Drake, Jeremy

    2017-09-01

    The X-ray and EUV emission of stars is vital for understanding the atmospheres and evolution of their planets. The coronae of dwarf stars later than M6 behave differently to those of earlier spectral types and are more X-ray dim and radio bright. Too faint to have been observed by EUVE, their EUV behavior is currently highly uncertain. We propose to observe a small sample of late M dwarfs using the off-axis HRC-S thin Al" filter that is sensitive to EUV emission in the 50-200 A range. The measured fluxes will be used to understand the amount of cooler coronal plasma present, and extend X-ray-EUV flux relations to the latest stellar types.

  10. Enhancement of EUV emission from a liquid microjet target by use of dual laser pulses

    Science.gov (United States)

    Higashiguchi, Takeshi; Rajyaguru, Chirag; Koga, Masato; Kawasaki, Keita; Sasaki, Wataru; Kubodera, Shoichi; Kikuchi, Takashi; Yugami, Noboru; Kawata, Shigeo; Andreev, Alexander A.

    2005-03-01

    Extreme ultraviolet (EUV) radiation at the wavelength of around 13nm waws observed from a laser-produced plasma using continuous water-jet. Strong dependence of the conversion efficiency (CE) on the laser focal spot size and jet diameter was observed. The EUV CE at a given laser spot size and jet diameter was further enhanced using double laser pulses, where a pre-pulse was used for initial heating of the plasma.

  11. Novel EUV photoresist for sub-7nm node (Conference Presentation)

    Science.gov (United States)

    Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

    2017-04-01

    Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

  12. EUV mask manufacturing readiness in the merchant mask industry

    Science.gov (United States)

    Green, Michael; Choi, Yohan; Ham, Young; Kamberian, Henry; Progler, Chris; Tseng, Shih-En; Chiou, Tsann-Bim; Miyazaki, Junji; Lammers, Ad; Chen, Alek

    2017-10-01

    As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process "stress testing" to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for

  13. Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Cardinale, G. F.; Henderson, C. C.; Goldsmith, J. E. M.; Mangat, P. J. S.; Cobb, J.; Hector, S. D.

    1999-01-01

    In two separate experiments, we have successfully demonstrated the transfer of dense- and loose-pitch line/space (L/S) photoresist features, patterned with extreme ultraviolet (EUV) lithography, into an underlying hard mask material. In both experiments, a deep-UV photoresist (∼90 nm thick) was spin cast in bilayer format onto a hard mask (50-90 nm thick) and was subsequently exposed to EUV radiation using a 10x reduction EUV exposure system. The EUV reticle was fabricated at Motorola (Tempe, AZ) using a subtractive process with Ta-based absorbers on Mo/Si multilayer mask blanks. In the first set of experiments, following the EUV exposures, the L/S patterns were transferred first into a SiO 2 hard mask (60 nm thick) using a reactive ion etch (RIE), and then into polysilicon (350 nm thick) using a triode-coupled plasma RIE etcher at the University of California, Berkeley, microfabrication facilities. The latter etch process, which produced steep (>85 degree sign ) sidewalls, employed a HBr/Cl chemistry with a large (>10:1) etch selectivity of polysilicon to silicon dioxide. In the second set of experiments, hard mask films of SiON (50 nm thick) and SiO 2 (87 nm thick) were used. A RIE was performed at Motorola using a halogen gas chemistry that resulted in a hard mask-to-photoresist etch selectivity >3:1 and sidewall profile angles ≥85 degree sign . Line edge roughness (LER) and linewidth critical dimension (CD) measurements were performed using Sandia's GORA(c) CD digital image analysis software. Low LER values (6-9 nm, 3σ, one side) and good CD linearity (better than 10%) were demonstrated for the final pattern-transferred dense polysilicon L/S features from 80 to 175 nm. In addition, pattern transfer (into polysilicon) of loose-pitch (1:2) L/S features with CDs≥60 nm was demonstrated. (c) 1999 American Vacuum Society

  14. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ling; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang [Institute of Plasma Physics Chinese Academy of Sciences, Hefei 230026, Anhui (China); Morita, Shigeru; Ohishi, Tetsutarou; Goto, Motoshi [National Institute for Fusion Science, Toki 509-5292, Gifu (Japan); Department of Fusion Science, Graduate University for Advanced Studies, Toki 509-5292, Gifu (Japan); Dong, Chunfeng [Southwestern Institute of Physics, Chengdu 610041, Sichuan (China); and others

    2015-12-15

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm{sup 2} and pixel numbers of 1024 × 255 (26 × 26 μm{sup 2}/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ{sub 0} = 3-4 pixels, where Δλ{sub 0} is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification.

  15. The Formation of a Power Multi-Pulse Extreme Ultraviolet Radiation in the Pulse Plasma Diode of Low Pressure

    Directory of Open Access Journals (Sweden)

    Ievgeniia V. Borgun

    2013-01-01

    Full Text Available In this paper results are presented on experimental studies of the temporal characteristics of spike extreme ultraviolet (EUV radiation in the spectral range of 12.2 ÷ 15.8 nm from the anode region of high-current (I = 40 kA pulsed discharges in tin vapor. It is observed that the intense multi-spike radiation in this range arises at an inductive stage of the discharge. It has been shown that the radiation spikes correlate with the sharp increase of active resistance and of pumped power, due to plasma heating by an electron beam, formed in the double layer of charged particles. It has been observed that for large number of spikes the conversion efficiency of pumped energy into radiationat double layer formation is essentially higher in comparison with collisional heating.

  16. GLOBAL SIMULATION OF AN EXTREME ULTRAVIOLET IMAGING TELESCOPE WAVE

    International Nuclear Information System (INIS)

    Schmidt, J. M.; Ofman, L.

    2010-01-01

    We use the observation of an Extreme Ultraviolet Imaging Telescope (EIT) wave in the lower solar corona, seen with the two Solar Terrestrial Relations Observatory (STEREO) spacecraft in extreme ultraviolet light on 2007 May 19, to model the same event with a three-dimensional (3D) time-depending magnetohydrodynamic (MHD) code that includes solar coronal magnetic fields derived with Wilcox Solar Observatory magnetogram data, and a solar wind outflow accelerated with empirical heating functions. The model includes a coronal mass ejection (CME) of Gibson and Low flux rope type above the reconstructed active region with parameters adapted from observations to excite the EIT wave. We trace the EIT wave running as circular velocity enhancement around the launching site of the CME in the direction tangential to the sphere produced by the wave front, and compute the phase velocities of the wave front. We find that the phase velocities are in good agreement with theoretical values for a fast magnetosonic wave, derived with the physical parameters of the model, and with observed phase speeds of an incident EIT wave reflected by a coronal hole and running at about the same location. We also produce in our 3D MHD model the observed reflection of the EIT wave at the coronal hole boundary, triggered by the magnetic pressure difference between the wave front hitting the hole and the boundary magnetic fields of the coronal hole, and the response of the coronal hole, which leads to the generation of secondary reflected EIT waves radiating away in different directions than the incident EIT wave. This is the first 3D MHD model of an EIT wave triggered by a CME that includes realistic solar magnetic field, with results comparing favorably to STEREO Extreme Ultraviolet Imager observations.

  17. Absorption and Emission of EUV Radiation by the Local ISM

    Science.gov (United States)

    Paresce, F.

    1984-01-01

    The Berkeley extreme ultraviolet radiation (EUV) telescope flown on the Apollo Soyuz mission in July, 1975 established the existence of a measurable flux of EUV (100 lambda or = or = 1000 A) originating from sources outside the solar system. White dwarfs, flare stars and cataclysmic variables were dicovered to be relatively intense compact sources of EUV photons. Moreover, this and other subsequent experiments have strongly suggested the presence of a truly diffuse component of the FUV radiation field possibly due to thermal emission from hot interstellar gas located in the general vicinity of the Sun. Closer to the H1, 912 A edge, the effect of a few hot O and B stars has been shown to be very important in establishing the interstellar flux density. All these results imply that the local interstellar medium (ISM) is immersed in a non-negligible EUV radiation field which, because of the strong coupling between EUV photons and matter, will play a crucial role in determining its physical structure. The available information on the local ISM derived from the limited EUV observations carried out so far is assembled and analyzed. These include measurements of the spectra of bright EUV sources that reveal clear evidence of H photo absorption at lambda 400 A and of the He ionization edge at 228 A.

  18. Rabi oscillations in extreme ultraviolet ionization of atomic argon

    Science.gov (United States)

    Flögel, Martin; Durá, Judith; Schütte, Bernd; Ivanov, Misha; Rouzée, Arnaud; Vrakking, Marc J. J.

    2017-02-01

    We demonstrate Rabi oscillations in nonlinear ionization of argon by an intense femtosecond extreme ultraviolet (XUV) laser field produced by high-harmonic generation. We monitor the formation of A r2 + as a function of the time delay between the XUV pulse and an additional near-infrared (NIR) femtosecond laser pulse, and show that the population of an A r+* intermediate resonance exhibits strong modulations both due to an NIR laser-induced Stark shift and XUV-induced Rabi cycling between the ground state of A r+ and the A r+* excited state. Our experiment represents a direct experimental observation of a Rabi-cycling process in the XUV regime.

  19. THE HIGH-RESOLUTION EXTREME-ULTRAVIOLET SPECTRUM OF N{sub 2} BY ELECTRON IMPACT

    Energy Technology Data Exchange (ETDEWEB)

    Heays, A. N. [Leiden Observatory, Leiden University, P.O. Box 9513, 2300 RA Leiden (Netherlands); Ajello, J. M.; Aguilar, A. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Lewis, B. R.; Gibson, S. T., E-mail: heays@strw.leidenuniv.nl [Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2014-04-01

    We have analyzed high-resolution (FWHM = 0.2 Å) extreme-ultraviolet (EUV, 800-1350 Å) laboratory emission spectra of molecular nitrogen excited by an electron impact at 20 and 100 eV under (mostly) optically thin, single-scattering experimental conditions. A total of 491 emission features were observed from N{sub 2} electronic-vibrational transitions and atomic N I and N II multiplets and their emission cross sections were measured. Molecular emission was observed at vibrationally excited ground-state levels as high as v'' = 17, from the a {sup 1}Π {sub g} , b {sup 1}Π {sub u} , and b'{sup 1}Σ {sub u} {sup +} excited valence states and the Rydberg series c'{sub n} {sub +1} {sup 1}Σ {sub u} {sup +}, c{sub n} {sup 1}Π {sub u} , and o{sub n} {sup 1}Π {sub u} for n between 3 and 9. The frequently blended molecular emission bands were disentangled with the aid of a sophisticated and predictive quantum-mechanical model of excited states that includes the strong coupling between valence and Rydberg electronic states and the effects of predissociation. Improved model parameters describing electronic transition moments were obtained from the experiment and allowed for a reliable prediction of the vibrationally summed electronic emission cross section, including an extrapolation to unobserved emission bands and those that are optically thick in the experimental spectra. Vibrationally dependent electronic excitation functions were inferred from a comparison of emission features following 20 and 100 eV electron-impact collisional excitation. The electron-impact-induced fluorescence measurements are compared with Cassini Ultraviolet Imaging Spectrograph observations of emissions from Titan's upper atmosphere.

  20. Photoionization capable, extreme and vacuum ultraviolet emission in developing low temperature plasmas in air

    NARCIS (Netherlands)

    Stephens, J.; Fierro, A.; Beeson, S.; Laity, G.; Trienekens, D.; Joshi, R.P.; Dickens, J.; Neuber, A.

    2016-01-01

    Experimental observation of photoionization capable extreme ultraviolet and vacuum ultraviolet emission from nanosecond timescale, developing low temperature plasmas (i.e. streamer discharges) in atmospheric air is presented. Applying short high voltage pulses enabled the observation of the onset of

  1. Electron-hole pairs generated in ZrO2 nanoparticle resist upon exposure to extreme ultraviolet radiation

    Science.gov (United States)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2018-02-01

    Metal oxide nanoparticle resists have attracted much attention as the next-generation resist used for the high-volume production of semiconductor devices. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In this study, the energy deposition in a zirconium oxide (ZrO2) nanoparticle resist was investigated. The numbers of electron-hole pairs generated in a ZrO2 core and an methacrylic acid (MAA) ligand shell upon exposure to 1 mJ cm-2 (exposure dose) extreme ultraviolet (EUV) radiations were theoretically estimated to be 0.16 at most and 0.04-0.17 cm2 mJ-1, respectively. By comparing the calculated distribution of electron-hole pairs with the line-and-space patterns of the ZrO2 nanoparticle resist fabricated by an EUV exposure tool, the number of electron-hole pairs required for the solubility change of the resist films was estimated to be 1.3-2.2 per NP. NP denotes a nanoparticle consisting of a metal oxide core with a ligand shell. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in the metal oxide core for the chemical change of ligand molecules.

  2. Extreme Ultraviolet Process Optimization for Contact Layer of 14 nm Node Logic and 16 nm Half Pitch Memory Devices

    Science.gov (United States)

    Tseng, Shih-En; Chen, Alek

    2012-06-01

    Extreme ultraviolet (EUV) lithography is considered the most promising single exposure technology at the 27 nm half-pitch node and beyond. The imaging performance of ASML TWINSCAN NXE:3100 has been demonstrated to be able to resolve 26 nm Flash gate layer and 16 nm static random access memory (SRAM) metal layer with a 0.25 numerical aperture (NA) and conventional illumination. Targeting for high volume manufacturing, ASML TWINSCAN NXE:3300B, featuring a 0.33 NA lens with off-axis illumination, will generate a higher contrast aerial image due to improved diffraction order collection efficiency and is expected to reduce target dose via mask biasing. This work performed a simulation to determine how EUV high NA imaging benefits the mask rule check trade-offs required to achieve viable lithography solutions in two device application scenarios: a 14 nm node 6T-SRAM contact layer and a 16 nm half-pitch NAND Flash staggered contact layer. In each application, the three-dimensional mask effects versus Kirchhoff mask were also investigated.

  3. High intensity vacuum ultraviolet and extreme ultraviolet production by noncollinear mixing in laser vaporized media

    Energy Technology Data Exchange (ETDEWEB)

    Todt, Michael A.; Albert, Daniel R.; Davis, H. Floyd, E-mail: hfd1@cornell.edu [Baker Laboratory, Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301 (United States)

    2016-06-15

    A method is described for generating intense pulsed vacuum ultraviolet (VUV) and extreme ultraviolet (XUV) laser radiation by resonance enhanced four-wave mixing of commercial pulsed nanosecond lasers in laser vaporized mercury under windowless conditions. By employing noncollinear mixing of the input beams, the need of dispersive elements such as gratings for separating the VUV/XUV from the residual UV and visible beams is eliminated. A number of schemes are described, facilitating access to the 9.9–14.6 eV range. A simple and convenient scheme for generating wavelengths of 125 nm, 112 nm, and 104 nm (10 eV, 11 eV, and 12 eV) using two dye lasers without the need for dye changes is described.

  4. The Extreme Ultraviolet spectrometer on bard the Hisaki satellite

    Science.gov (United States)

    Yoshioka, K.; Murakami, G.; Yamazaki, A.; Tsuchiya, F.; Kagitani, M.; Kimura, T.; Yoshikawa, I.

    2017-12-01

    The extreme ultraviolet spectroscope EXCEED (EXtrem ultraviolet spetrosCope for ExosphEric Dynamics) on board the Hisaki satellite was launched in September 2013 from the Uchinoura space center, Japan. It is orbiting around the Earth with an orbital altitude of around 950-1150 km. This satellite is dedicated to and optimized for observing the atmosphere and magnetosphere of terrestrial planets such as Mercury, Venus, Mars, as well as Jupiter. The instrument consists of an off axis parabolic entrance mirror, switchable slits with multiple filters and shapes, a toroidal grating, and a photon counting detector, together with a field of view guiding camera. The design goal is to achieve a large effective area but with high spatial and spectral resolution. Based on the after-launch calibration, the spectral resolution of EXCEED is found to be 0.3-0.5 nm FWHM (Full Width at Half Maximum) over the entire spectral band, and the spatial resolution is around 17". The evaluated effective area is larger than 1cm2. In this presentation, the basic concept of the instrument design and the observation technique are introduced. The current status of the spacecraft and its future observation plan are also shown.

  5. EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

    Science.gov (United States)

    Putna, E. Steve; Younkin, Todd R.; Leeson, Michael; Caudillo, Roman; Bacuita, Terence; Shah, Uday; Chandhok, Manish

    2011-04-01

    The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 22nm half pitch node and beyond. According to recent assessments made at the 2010 EUVL Symposium, the readiness of EUV materials remains one of the top risk items for EUV adoption. The main development issue regarding EUV resists has been how to simultaneously achieve high resolution, high sensitivity, and low line width roughness (LWR). This paper describes our strategy, the current status of EUV materials, and the integrated post-development LWR reduction efforts made at Intel Corporation. Data collected utilizing Intel's Micro- Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits <=22nm half-pitch (HP) L/S resolution at <=11.3mJ/cm2 with <=3nm LWR.

  6. X-rays and extreme ultraviolet radiation principles and applications

    CERN Document Server

    Attwood, David

    2016-01-01

    With this fully updated second edition, readers will gain a detailed understanding of the physics and applications of modern X-ray and EUV radiation sources. Taking into account the most recent improvements in capabilities, coverage is expanded to include new chapters on free electron lasers (FELs), laser high harmonic generation (HHG), X-ray and EUV optics, and nanoscale imaging; a completely revised chapter on spatial and temporal coherence; and extensive discussion of the generation and applications of femtosecond and attosecond techniques. Readers will be guided step by step through the mathematics of each topic, with over 300 figures, 50 reference tables and 600 equations enabling easy understanding of key concepts. Homework problems, a solutions manual for instructors, and links to YouTube lectures accompany the book online. This is the 'go-to' guide for graduate students, researchers and industry practitioners interested in X-ray and EUV interaction with matter.

  7. Method for the protection of extreme ultraviolet lithography optics

    Science.gov (United States)

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  8. Absolute measurement of undulator radiation in the extreme ultraviolet

    International Nuclear Information System (INIS)

    Maezawa, H.; Kitamura, H.; Sasaki, T.; Mitani, S.; Osaka City Univ.; Suzuki, Y.; Kanamori, H.; Tamamushi, S.; Tokyo Univ.; Mikuni, A.; Tokyo Univ., Tanashi

    1983-01-01

    The spectral brightness of undulator radiation emitted by the model PMU-1 incorporated in the SOR-RING, the dedicated synchrotron radiation source in Tokyo, has been studied in the extreme ultraviolet region from 21.6 to 72.9 eV as a function of the electron energy #betta#, the field parameter K, and the angle of observation THETA in the absolute scale. A series of measurements covering the first and the second harmonic component of undulator radiation was compared with the fundamental formula lambdasub(n)=lambda 0 /2n#betta# 2 (1+K 2 /2+#betta# 2 THETA 2 ), and the effects of finite emittance were studied. The brightness at the first peak was smaller than the theoretical value, while an enhanced second harmonic component was observed. (orig.)

  9. Laser waveform control of extreme ultraviolet high harmonics from solids.

    Science.gov (United States)

    You, Yong Sing; Wu, Mengxi; Yin, Yanchun; Chew, Andrew; Ren, Xiaoming; Gholam-Mirzaei, Shima; Browne, Dana A; Chini, Michael; Chang, Zenghu; Schafer, Kenneth J; Gaarde, Mette B; Ghimire, Shambhu

    2017-05-01

    Solid-state high-harmonic sources offer the possibility of compact, high-repetition-rate attosecond light emitters. However, the time structure of high harmonics must be characterized at the sub-cycle level. We use strong two-cycle laser pulses to directly control the time-dependent nonlinear current in single-crystal MgO, leading to the generation of extreme ultraviolet harmonics. We find that harmonics are delayed with respect to each other, yielding an atto-chirp, the value of which depends on the laser field strength. Our results provide the foundation for attosecond pulse metrology based on solid-state harmonics and a new approach to studying sub-cycle dynamics in solids.

  10. Study of crystalline thin films and nanofibers by means of the laser–plasma EUV-source based microscopy

    International Nuclear Information System (INIS)

    Wachulak, P.W.; Bartnik, A.; Baranowska-Korczyc, A.; Pánek, D.; Brůža, P.; Kostecki, J.; Węgrzyński, Ł.; Jarocki, R.; Szczurek, M.; Fronc, K.; Elbaum, D.; Fiedorowicz, H.

    2013-01-01

    New developments in nanoscience and nanotechnology require nanometer scale resolution imaging tools and techniques such as an extreme ultraviolet (EUV) and soft X-ray (SXR) microscopy, based on Fresnel zone plates. In this paper, we report on applications of a desk-top microscopy using a laser-plasma EUV source based on a gas-puff target for studies of morphology of thin silicon membranes coated with NaCl crystals and samples composed of ZnO nanofibers

  11. Near infrared and extreme ultraviolet light pulses induced modifications of ultrathin Co films

    Directory of Open Access Journals (Sweden)

    Jan Kisielewski

    2017-05-01

    Full Text Available We report on comparative study of magnetic properties of Pt/Co/Pt trilayers after irradiation with different light sources. Ultrathin Pt/Co/Pt films were deposited by molecular beam epitaxy technique on sapphire (0001 substrates. Pt buffers were grown at room temperature (RT and at 750°C (high temperature, HT. The samples were irradiated with a broad range of light energy densities (up to film ablation using two different single pulse irradiation sources: (i 40 fs laser with 800 nm wavelength and (ii 3 ns laser-plasma source of extreme ultraviolet (EUV with the most intense emission centered at 11 nm. The light pulse-driven irreversible structural and as a consequence, magnetic modifications were investigated using polar magneto-optical Kerr effect-based microscopy and atomic and magnetic force microscopies. The light pulse-induced transitions from the out-of-plane to in-plane magnetization state, and from in-plane to out-of-plane, were observed for both types of samples and irradiation methods. Diagrams of the magnetic states as a function of the Co layer thickness and energy density of the absorbed femtosecond pulses were constructed for the samples with both the RT and HT buffers. The energy density range responsible for the creation of the out-of-plane magnetization was wider for the HT than for RT buffer. This is correlated with the higher (for HT crystalline quality and much smoother Pt/Co surface deduced from the X-ray diffraction studies. Submicrometer magnetic domains were observed in the irradiated region while approaching the out-of-plane magnetization state. Changes of Pt/Co/Pt structures are discussed for both types of light pulses.

  12. High brightness extreme ultraviolet (at 13.5 nm) emission from time-of-flight controlled discharges with coaxial fuel injection

    International Nuclear Information System (INIS)

    Hosokai, Tomonao; Horioka, Kazuhiko; Hotta, Eiki; Yokoyama, Takuma; Sato, Hiroto; Zhidkov, Alexei

    2008-01-01

    Extreme ultraviolet (EUV) emission from discharge produced plasma with the coaxial injection of fuel vapor (tin and lithium) produced by laser ablation is experimentally studied. Multiple plasma pinches preceding a strong and long recombination radiation of EUV are observed in the first half cycle of a sinusoidal discharge current. Due to the time-of-flight control type of the discharge, the shape of pinch radiation pulses is almost identical. With the coaxial injection of time-of-flight controlled discharges, the highest brightness of EUV emission (maximum extracted energy of 244.3 mJ/2π sr per pulse with the emitter size of ∼1x0.3 mm 2 in full width at half maximum) is provided with efficiency exceeding 2% of deposited energy into the plasma (or 1% of dissipated energy in the discharge) due to a much better matching with the optimal plasma parameters in the recombination regime and a decrease in the off-duty factor. Stability of emitting plasma of the repetitive pinches is essentially improved with use of a second laser pulse

  13. Plasma-based EUV light source

    Science.gov (United States)

    Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

    2010-11-02

    Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

  14. EUV observations of the active Sun from the Havard experiment on ATM

    International Nuclear Information System (INIS)

    Noyes, R.W.; Foukal, P.V.; Huber, M.C.E.; Reeves, E.M.; Schmahl, E.J.; Timothy, J.G.; Vernazza, J.E.; Withbroe, G.L.

    1975-01-01

    The authors review some preliminary results from the Harvard College Observatory Extreme Ultraviolet Spectroheliometer on ATM that pertain to solar activity. The results reviewed are described in more detail in other papers referred to in the text. They first describe the instrument and its capabilities, and then turm to results on active regions, sunspots, flares, EUV bright points, coronal holes, and prominences. (Auth.)

  15. Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

    NARCIS (Netherlands)

    Huang, Qiushi; Medvedev, Viacheslav; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Louis, Eric; Bijkerk, Frederik

    2017-01-01

    Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV

  16. Physical processes in EUV sources for microlithography

    International Nuclear Information System (INIS)

    Banine, V Y; Swinkels, G H P M; Koshelev, K N

    2011-01-01

    The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL tool operates at a wavelength of 13.5 nm, which requires the following new developments. - The light production mechanism changes from conventional lamps and lasers to relatively high-temperature emitting plasmas. - The light transport, mainly refractive for deep ultraviolet (DUV), should be reflective for EUV. - The source specifications as derived from the customer requirements on wafer throughput mean that the output EUV source power has to be hundreds of watts. This in its turn means that tens to hundreds of kilowatts of dissipated power has to be managed in a relatively small volume. - In order to keep lithography costs as low as possible, the lifetime of the components should be as long as possible and at least of the order of thousands of hours. This poses a challenge for the sources, namely how to design and manufacture components robust enough to withstand the intense environment of high heat dissipation, flows of several keV ions as well as the atomic and particular debris within the source vessel. - As with all lithography tools, the imaging requirements demand a narrow illumination bandwidth. Absorption of materials at EUV wavelengths is extreme with extinguishing lengths of the order of tens of nanometres, so the balance between high transmission and spectral purity requires careful engineering. All together, EUV lithography sources present technological challenges in various fields of physics such as plasma, optics and material science. These challenges are being tackled by the source manufacturers and investigated extensively in the research facilities around the world. An overview of the published results on the topic as well as the analyses of the physical processes behind the proposed solutions will be presented in this paper. (topical review)

  17. Optical studies of noctilucent clouds in the extreme ultraviolet

    Directory of Open Access Journals (Sweden)

    J. Hedin

    2008-05-01

    Full Text Available In order to better understand noctilucent clouds (NLC and their sensitivity to the variable environment of the polar mesosphere, more needs to be learned about the actual cloud particle population. Optical measurements are today the only means of obtaining information about the size of mesospheric ice particles. In order to efficiently access particle sizes, scattering experiments need to be performed in the Mie scattering regime, thus requiring wavelengths of the order of the particle size. Previous studies of NLC have been performed at wavelengths down to 355 nm from the ground and down to about 200 nm from rockets and satellites. However, from these measurements it is not possible to access the smaller particles in the mesospheric ice population. This current lack of knowledge is a major limitation when studying important questions about the nucleation and growth processes governing NLC and related particle phenomena in the mesosphere. We show that NLC measurements in the extreme ultraviolet, in particular using solar Lyman-α radiation at 121.57 nm, are an efficient way to further promote our understanding of NLC particle size distributions. This applies both to global measurements from satellites and to detailed in situ studies from sounding rockets. Here, we present examples from recent rocket-borne studies that demonstrate how ambiguities in the size retrieval at longer wavelengths can be removed by invoking Lyman-α. We discuss basic requirements and instrument concepts for future rocket-borne NLC missions. In order for Lyman-α radiation to reach NLC altitudes, high solar elevation and, hence, daytime conditions are needed. Considering the effects of Lyman-α on NLC in general, we argue that the traditional focus of rocket-borne NLC missions on twilight conditions has limited our ability to study the full complexity of the summer mesopause environment.

  18. Analysis of extreme ultraviolet spectra from laser produced rhenium plasmas

    Science.gov (United States)

    Wu, Tao; Higashiguchi, Takeshi; Li, Bowen; Suzuki, Yuhei; Arai, Goki; Dinh, Thanh-Hung; Dunne, Padraig; O'Reilly, Fergal; Sokell, Emma; Liu, Luning; O'Sullivan, Gerry

    2015-08-01

    Extreme ultraviolet spectra of highly-charged rhenium ions were observed in the 1-7 nm region using two Nd:YAG lasers with pulse lengths of 150 ps and 10 ns, respectively, operating at a number of laser power densities. The maximum focused peak power density was 2.6 × 1014 W cm-2 for the former and 5.5 × 1012 W cm-2 for the latter. The Cowan suite of atomic structure codes and unresolved transition array (UTA) approach were used to calculate and interpret the emission properties of the different spectra obtained. The results show that n = 4-n = 4 and n = 4-n = 5 UTAs lead to two intense quasi-continuous emission bands in the 4.3-6.3 nm and 1.5-4.3 nm spectral regions. As a result of the different ion stage distributions in the plasmas induced by ps and ns laser irradiation the 1.5-4.3 nm UTA peak moves to shorter wavelength in the ps laser produced plasma spectra. For the ns spectrum, the most populated ion stage during the lifetime of this plasma that could be identified from the n = 4-n = 5 transitions was Re23+ while for the ps plasma the presence of significantly higher stages was demonstrated. For the n = 4-n = 4 4p64dN-4p54dN+1 + 4p64dN-14f transitions, the 4d-4f transitions contribute mainly in the most intense 4.7-5.5 nm region while the 4p-4d subgroup gives rise to a weaker feature in the 4.3-4.7 nm region. A number of previously unidentified spectral features produced by n = 4-n = 5 transitions in the spectra of Re XVI to Re XXXIX are identified.

  19. ULTRAVIOLET AND EXTREME-ULTRAVIOLET EMISSIONS AT THE FLARE FOOTPOINTS OBSERVED BY ATMOSPHERE IMAGING ASSEMBLY

    Energy Technology Data Exchange (ETDEWEB)

    Qiu Jiong; Longcope, Dana W.; Liu Wenjuan [Department of Physics, Montana State University, Bozeman, MT 59717-3840 (United States); Sturrock, Zoe [Department of Applied Mathematics, University of St. Andrews (United Kingdom); Klimchuk, James A. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

    2013-09-01

    A solar flare is composed of impulsive energy release events by magnetic reconnection, which forms and heats flare loops. Recent studies have revealed a two-phase evolution pattern of UV 1600 A emission at the feet of these loops: a rapid pulse lasting for a few seconds to a few minutes, followed by a gradual decay on timescales of a few tens of minutes. Multiple band EUV observations by the Atmosphere Imaging Assembly further reveal very similar signatures. These two phases represent different but related signatures of an impulsive energy release in the corona. The rapid pulse is an immediate response of the lower atmosphere to an intense thermal conduction flux resulting from the sudden heating of the corona to high temperatures (we rule out energetic particles due to a lack of significant hard X-ray emission). The gradual phase is associated with the cooling of hot plasma that has been evaporated into the corona. The observed footpoint emission is again powered by thermal conduction (and enthalpy), but now during a period when approximate steady-state conditions are established in the loop. UV and EUV light curves of individual pixels may therefore be separated into contributions from two distinct physical mechanisms to shed light on the nature of energy transport in a flare. We demonstrate this technique using coordinated, spatially resolved observations of UV and EUV emissions from the footpoints of a C3.2 thermal flare.

  20. EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs

    Science.gov (United States)

    Putna, E. Steve; Younkin, Todd R.; Chandhok, Manish; Frasure, Kent

    2009-03-01

    The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 32nm half-pitch node and beyond. Readiness of EUV materials is currently one high risk area according to assessments made at the 2008 EUVL Symposium. The main development issue regarding EUV resist has been how to simultaneously achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the strategy and current status of EUV resist development at Intel Corporation. Data is presented utilizing Intel's Micro-Exposure Tool (MET) examining the feasibility of establishing a resist process that simultaneously exhibits <=30nm half-pitch (HP) L/S resolution at <=10mJ/cm2 with <=4nm LWR.

  1. At-wavelength interferometry of high-NA diffraction-limited EUV optics

    Energy Technology Data Exchange (ETDEWEB)

    Goldberg, Kenneth A.; Naulleau, Patrick; Rekawa, Senajith; Denham, Paul; Liddle, J. Alexander; Anderson, Erik; Jackson, Keith; Bokor, Jeffrey; Attwood, David

    2003-08-01

    Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub{angstrom}-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed.

  2. At-wavelength interferometry of high-NA diffraction-limited EUV optics

    International Nuclear Information System (INIS)

    Goldberg, Kenneth A.; Naulleau, Patrick; Rekawa, Senajith; Denham, Paul; Liddle, J. Alexander; Anderson, Erik; Jackson, Keith; Bokor, Jeffrey; Attwood, David

    2003-01-01

    Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub(angstrom)-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed

  3. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hong; Duan, Lian; Lan, Hui [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Wang, Xinbing, E-mail: xbwang@hust.edu.cn; Chen, Ziqi; Zuo, Duluo [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lu, Peixiang [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-05-21

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  4. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    International Nuclear Information System (INIS)

    Chen, Hong; Duan, Lian; Lan, Hui; Wang, Xinbing; Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-01-01

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data

  5. EUV tools: hydrogen gas purification and recovery strategies

    Science.gov (United States)

    Landoni, Cristian; Succi, Marco; Applegarth, Chuck; Riddle Vogt, Sarah

    2015-03-01

    The technological challenges that have been overcome to make extreme ultraviolet lithography (EUV) a reality have been enormous1. This vacuum driven technology poses significant purity challenges for the gases employed for purging and cleaning the scanner EUV chamber and source. Hydrogen, nitrogen, argon and ultra-high purity compressed dry air (UHPCDA) are the most common gases utilized at the scanner and source level. Purity requirements are tighter than for previous technology node tools. In addition, specifically for hydrogen, EUV tool users are facing not only gas purity challenges but also the need for safe disposal of the hydrogen at the tool outlet. Recovery, reuse or recycling strategies could mitigate the disposal process and reduce the overall tool cost of operation. This paper will review the types of purification technologies that are currently available to generate high purity hydrogen suitable for EUV applications. Advantages and disadvantages of each purification technology will be presented. Guidelines on how to select the most appropriate technology for each application and experimental conditions will be presented. A discussion of the most common approaches utilized at the facility level to operate EUV tools along with possible hydrogen recovery strategies will also be reported.

  6. Ni-Al Alloys as Alternative EUV Mask Absorber

    Directory of Open Access Journals (Sweden)

    Vu Luong

    2018-03-01

    Full Text Available Extreme ultraviolet (EUV lithography is being industrialized as the next candidate printing technique for high-volume manufacturing of scaled down integrated circuits. At mask level, the combination of EUV light at oblique incidence, absorber thickness, and non-uniform mirror reflectance through incidence angle, creates photomask-induced imaging aberrations, known as mask 3D (M3D effects. A possible mitigation for the M3D effects in the EUV binary intensity mask (BIM, is to use mask absorber materials with high extinction coefficient κ and refractive coefficient n close to unity. We propose nickel aluminide alloys as a candidate BIM absorber material, and characterize them versus a set of specifications that a novel EUV mask absorber must meet. The nickel aluminide samples have reduced crystallinity as compared to metallic nickel, and form a passivating surface oxide layer in neutral solutions. Composition and density profile are investigated to estimate the optical constants, which are then validated with EUV reflectometry. An oxidation-induced Al L2 absorption edge shift is observed, which significantly impacts the value of n at 13.5 nm wavelength and moves it closer to unity. The measured optical constants are incorporated in an accurate mask model for rigorous simulations. The M3D imaging impact of the nickel aluminide alloy mask absorbers, which predict significant M3D reduction in comparison to reference absorber materials. In this paper, we present an extensive experimental methodology flow to evaluate candidate mask absorber materials.

  7. Analysis of extreme ultraviolet spectra from laser produced rhenium plasmas

    International Nuclear Information System (INIS)

    Wu, Tao; Dunne, Padraig; O’Reilly, Fergal; Sokell, Emma; Liu, Luning; O’Sullivan, Gerry; Higashiguchi, Takeshi; Suzuki, Yuhei; Arai, Goki; Dinh, Thanh-Hung; Li, Bowen

    2015-01-01

    Extreme ultraviolet spectra of highly-charged rhenium ions were observed in the 1–7 nm region using two Nd:YAG lasers with pulse lengths of 150 ps and 10 ns, respectively, operating at a number of laser power densities. The maximum focused peak power density was 2.6 × 10 14 W cm −2 for the former and 5.5 × 10 12 W cm −2 for the latter. The Cowan suite of atomic structure codes and unresolved transition array (UTA) approach were used to calculate and interpret the emission properties of the different spectra obtained. The results show that n = 4-n = 4 and n = 4-n = 5 UTAs lead to two intense quasi-continuous emission bands in the 4.3–6.3 nm and 1.5–4.3 nm spectral regions. As a result of the different ion stage distributions in the plasmas induced by ps and ns laser irradiation the 1.5–4.3 nm UTA peak moves to shorter wavelength in the ps laser produced plasma spectra. For the ns spectrum, the most populated ion stage during the lifetime of this plasma that could be identified from the n = 4-n = 5 transitions was Re 23+ while for the ps plasma the presence of significantly higher stages was demonstrated. For the n = 4-n = 4 4p 6 4d N -4p 5 4d N+1  + 4p 6 4d N−1 4f transitions, the 4d-4f transitions contribute mainly in the most intense 4.7–5.5 nm region while the 4p-4d subgroup gives rise to a weaker feature in the 4.3–4.7 nm region. A number of previously unidentified spectral features produced by n = 4-n = 5 transitions in the spectra of Re XVI to Re XXXIX are identified. (paper)

  8. Surface Inhomogeneities of the White Dwarf in the Binary EUVE J2013+400

    Science.gov (United States)

    Vennes, Stephane

    We propose to study the white dwarf in the binary EUVE J2013+400. The object is paired with a dMe star and new extreme ultraviolet (EUV) observations will offer critical insights into the properties of the white dwarf. The binary behaves, in every other aspects, like its siblings EUVE J0720-317 and EUVE J1016-053 and new EUV observations will help establish their class properties; in particular, EUV photometric variations in 0720-317 and 1016-053 over a period of 11 hours and 57 minutes, respectively, are indicative of surface abundance inhomogeneities coupled with the white dwarfs rotation period. These variations and their large photospheric helium abundance are best explained by a diffusion-accretion model in which time-variable accretion and possible coupling to magnetic poles contribute to abundance variations across the surface and possibly as a function of depth. EUV spectroscopy will also enable a study of the helium abundance as a function of depth and a detailed comparison with theoretical diffusion profile.

  9. Extreme ultraviolet resist materials for sub-7 nm patterning

    KAUST Repository

    Li, Li; Liu, Xuan; Pal, Shyam; Wang, Shulan; Ober, Christopher K.; Giannelis, Emmanuel P.

    2017-01-01

    Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

  10. Extreme ultraviolet resist materials for sub-7 nm patterning.

    Science.gov (United States)

    Li, Li; Liu, Xuan; Pal, Shyam; Wang, Shulan; Ober, Christopher K; Giannelis, Emmanuel P

    2017-08-14

    Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

  11. Extreme ultraviolet resist materials for sub-7 nm patterning

    KAUST Repository

    Li, Li

    2017-06-26

    Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore\\'s law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

  12. Repair of ultraviolet light-induced damage in Micrococcus radiophilus, and extremely resistant microorganism

    International Nuclear Information System (INIS)

    Lavin, M.F.; Jenkins, A.; Kidson, C.

    1976-01-01

    Repair of ultraviolet radiation damage was examined in an extremely radioresistant organism, Micrococcus radiophilus. Measurement of the number of thymine-containing dimers formed as a function of ultraviolet dose suggests that the ability of this organism to withstand high doses of ultraviolet radiation (20,000 ergs/mm 2 ) is not related to protective screening by pigments. M. radiophilus carries out a rapid excision of thymine dimers at doses of ultraviolet light up to 10,000 ergs/mm 2 . Synthesis of deoxyribonucleic acid is reduced after irradiation, but after removal of photodamage the rate approaches that in unirradiated cells. A comparison is drawn with Micrococcus luteus and M. radiodurans. We conclude that the extremely high resistance to ultraviolet irradiation in M. radiophilus is at least partly due to the presence of an efficient excision repair system

  13. Sub-50-as isolated extreme ultraviolet continua generated by 1.6-cycle near-infrared pulse combined with double optical gating scheme

    Science.gov (United States)

    Oguri, Katsuya; Mashiko, Hiroki; Ogawa, Tatsuya; Hanada, Yasutaka; Nakano, Hidetoshi; Gotoh, Hideki

    2018-04-01

    We demonstrate the generation of ultrabroad bandwidth attosecond continua extending to sub-50-as duration in the extreme ultraviolet (EUV) region based on a 1.6-cycle Ti:sapphire laser pulse. The combination of the amplitude gating scheme with a sub-two-cycle driver pulse and the double optical gating scheme achieves the continuum generation with a bandwidth of 70 eV at the full width at half maximum near the peak photon energy of 140 eV, which supports a Fourier-transform-limited pulse duration as short as 32 as. The carrier-envelope-phase (CEP) dependence of the attosecond continua shows a single-peak structure originating from the half-cycle cut-off at appropriate CEP values, which strongly indicates the generation of a single burst of an isolated attosecond pulse. Our approach suggests a possibility for isolated sub-50-as pulse generation in the EUV region by compensating for the intrinsic attosecond chirp with a Zr filter.

  14. A serendipitous observation of the gamma-ray burst GRB 921013b field with EUVE

    DEFF Research Database (Denmark)

    Castro-Tirado, A.J.; Gorosabel, J.; Bowyer, S.

    1999-01-01

    hours after the burst is 1.8 x10(-16) erg s(-1) cm(-2) after correction for absorption by the Galactic interstellar medium. Even if we exclude an intrinsic absorption, this is well below the detection limit of the EUVE measurement. Although it is widely accepted that gamma-ray bursts are at cosmological......We report a serendipitous extreme ultraviolet observation by EUVE of the field containing GRB 921013b, similar to 11 hours after its occurrence. This burst was detected on 1992 October 13 by the WATCH and PHEBUS on Granat, and by the GRB experiment on Ulysses. The lack of any transient (or...

  15. Normal incidence spectrophotometer using high density transmission grating technology and highly efficiency silicon photodiodes for absolute solar EUV irradiance measurements

    Science.gov (United States)

    Ogawa, H. S.; Mcmullin, D.; Judge, D. L.; Korde, R.

    1992-01-01

    New developments in transmission grating and photodiode technology now make it possible to realize spectrometers in the extreme ultraviolet (EUV) spectral region (wavelengths less than 1000 A) which are expected to be virtually constant in their diffraction and detector properties. Time dependent effects associated with reflection gratings are eliminated through the use of free standing transmission gratings. These gratings together with recently developed and highly stable EUV photodiodes have been utilized to construct a highly stable normal incidence spectrophotometer to monitor the variability and absolute intensity of the solar 304 A line. Owing to its low weight and compactness, such a spectrometer will be a valuable tool for providing absolute solar irradiance throughout the EUV. This novel instrument will also be useful for cross-calibrating other EUV flight instruments and will be flown on a series of Hitchhiker Shuttle Flights and on SOHO. A preliminary version of this instrument has been fabricated and characterized, and the results are described.

  16. Performance improvement of two-dimensional EUV spectroscopy based on high frame rate CCD and signal normalization method

    International Nuclear Information System (INIS)

    Zhang, H.M.; Morita, S.; Ohishi, T.; Goto, M.; Huang, X.L.

    2014-01-01

    In the Large Helical Device (LHD), the performance of two-dimensional (2-D) extreme ultraviolet (EUV) spectroscopy with wavelength range of 30-650A has been improved by installing a high frame rate CCD and applying a signal intensity normalization method. With upgraded 2-D space-resolved EUV spectrometer, measurement of 2-D impurity emission profiles with high horizontal resolution is possible in high-density NBI discharges. The variation in intensities of EUV emission among a few discharges is significantly reduced by normalizing the signal to the spectral intensity from EUV_—Long spectrometer which works as an impurity monitor with high-time resolution. As a result, high resolution 2-D intensity distribution has been obtained from CIV (384.176A), CV(2x40.27A), CVI(2x33.73A) and HeII(303.78A). (author)

  17. From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

    Science.gov (United States)

    Buitrago, Elizabeth; Fallica, Roberto; Fan, Daniel; Karim, Waiz; Vockenhuber, Michaela; van Bokhoven, Jeroen A.; Ekinci, Yasin

    2016-09-01

    Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

  18. Wave-mixing with high-order harmonics in extreme ultraviolet region

    International Nuclear Information System (INIS)

    Dao, Lap Van; Dinh, Khuong Ba; Le, Hoang Vu; Gaffney, Naylyn; Hannaford, Peter

    2015-01-01

    We report studies of the wave-mixing process in the extreme ultraviolet region with two near-infrared driving and controlling pulses with incommensurate frequencies (at 1400 nm and 800 nm). A non-collinear scheme for the two beams is used in order to spatially separate and to characterise the properties of the high-order wave-mixing field. We show that the extreme ultraviolet frequency mixing can be treated by perturbative, very high-order nonlinear optics; the modification of the wave-packet of the free electron needs to be considered in this process

  19. Performance of 100-W HVM LPP-EUV source

    Science.gov (United States)

    Mizoguchi, Hakaru; Nakarai, Hiroaki; Abe, Tamotsu; Nowak, Krzysztof M.; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Hori, Tsukasa; Kodama, Takeshi; Shiraishi, Yutaka; Yanagida, Tatsuya; Soumagne, Georg; Yamada, Tsuyoshi; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi

    2015-08-01

    At Gigaphoton Inc., we have developed unique and original technologies for a carbon dioxide laser-produced tin plasma extreme ultraviolet (CO2-Sn-LPP EUV) light source, which is the most promising solution for high-power high-volume manufacturing (HVM) EUV lithography at 13.5 nm. Our unique technologies include the combination of a pulsed CO2 laser with Sn droplets, the application of dual-wavelength laser pulses for Sn droplet conditioning, and subsequent EUV generation and magnetic field mitigation. Theoretical and experimental data have clearly shown the advantage of our proposed strategy. Currently, we are developing the first HVM light source, `GL200E'. This HVM light source will provide 250-W EUV power based on a 20-kW level pulsed CO2 laser. The preparation of a high average-power CO2 laser (more than 20 kW output power) has been completed in cooperation with Mitsubishi Electric Corporation. Recently, we achieved 140 W at 50 kHz and 50% duty cycle operation as well as 2 h of operation at 100 W of power level. Further improvements are ongoing. We will report the latest status and the challenge to reach stable system operation of more than 100 W at about 4% conversion efficiency with 20-μm droplets and magnetic mitigation.

  20. Modular EUV Source for the next generation lithography

    International Nuclear Information System (INIS)

    Sublemontier, O.; Rosset-Kos, M.; Ceccotti, T.; Hergott, J.F.; Auguste, Th.; Normand, D.; Schmidt, M.; Beaumont, F.; Farcage, D.; Cheymol, G.; Le Caro, J.M.; Cormont, Ph.; Mauchien, P.; Thro, P.Y.; Skrzypczak, J.; Muller, S.; Marquis, E.; Barthod, B.; Gaurand, I.; Davenet, M.; Bernard, R.

    2011-01-01

    The present work, performed in the frame of the EXULITE project, was dedicated to the design and characterization of a laser-plasma-produced extreme ultraviolet (EUV) source prototype at 13.5 nm for the next generation lithography. It was conducted in cooperation with two laboratories from CEA, ALCATEL and THALES. One of our approach originalities was the laser scheme modularity. Six Nd:YAG laser beams were focused at the same time on a xenon filament jet to generate the EUV emitting plasma. Multiplexing has important industrial advantages and led to interesting source performances in terms of in-band power, stability and angular emission properties with the filament jet target. A maximum conversion efficiency (CE) value of 0.44% in 2π sr and 2% bandwidth was measured, which corresponds to a maximum in band EUV mean power of 7.7 W at a repetition rate of 6 kHz. The EUV emission was found to be stable and isotropic in these conditions. (authors)

  1. EUV lithographic radiation grafting of thermo-responsive hydrogel nanostructures

    International Nuclear Information System (INIS)

    Farquet, Patrick; Padeste, Celestino; Solak, Harun H.; Guersel, Selmiye Alkan; Scherer, Guenther G.; Wokaun, Alexander

    2007-01-01

    Nanostructures of the thermoresponsive poly(N-isopropyl acrylamide) (PNIPAAm) and of PNIPAAm-block-poly(acrylic acid) copolymers were produced on poly(tetrafluoroethylene-co-ethyelene) (ETFE) films using extreme ultraviolet (EUV) lithographic exposure with subsequent graft-polymerization. The phase transition of PNIPAAm nanostructures at the low critical solution temperature (LCST) at 32 deg. C was imaged by atomic force microscopy (AFM) phase contrast measurements in pure water. Results show a higher phase contrast for samples measured below the LCST temperature than for samples above the LCST, proving that the soft PNIPAAm hydrogel transforms into a much more compact conformation above the LCST. EUV lithographic exposures were combined with the reversible addition-fragment chain transfer (RAFT)-mediated polymerization using cyanoisopropyl dithiobenzoate (CPDB) as chain transfer agent to synthesize PNIPAAm block-copolymer nanostructures

  2. Driving down defect density in composite EUV patterning film stacks

    Science.gov (United States)

    Meli, Luciana; Petrillo, Karen; De Silva, Anuja; Arnold, John; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex; Durrant, Danielle; Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Kawakami, Shinichiro; Matsunaga, Koichi

    2017-03-01

    Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL. In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

  3. The EUVE Mission at UCB: Squeezing More From Less

    Science.gov (United States)

    Stroozas, B. A.; Cullison, J. L.; McDonald, K. E.; Nevitt, R.; Malina, R. F.

    2000-05-01

    With 8 years on orbit, and over three years in an outsourced mode at U.C. Berkeley (UCB), NASA's Extreme Ultraviolet Explorer (EUVE) continues to be a highly mature and productive scientific mission. The EUVE satellite is extremely stable and exhibits little degradation in its original scientific capabilities, and science data return continues to be at the >99% level. The Project's very small, dedicated, innovative, and relatively cheap ( \\$1 million/year) support team at UCB continues to validate the success of NASA's outsourcing "experiment" while providing a very high science-per-dollar return on NASA's investment with no significant additional risk to the flight systems. The EUVE mission still has much more to offer in terms of important and exciting scientific discoveries as well as mission operations innovations. To highlight this belief the EUVE team at UCB continues to find creative ways to do more with less -- to squeeze the maximum out of available funds -- in NASA's "cheaper, better, faster" environment. This paper provides an overview of the EUVE mission's past, current, and potential future efforts toward automating and integrating its multi-functional data processing systems in proposal management, observation planning, mission operations and engineering, and the processing, archival, and delivery of raw telemetry and science data products. The paper will also discuss the creative allocation of the Project's few remaining personnel resources who support both core mission functions and new innovations, while at the same time minimizing overall risk and stretching the available budget. This work is funded through NASA/UCB Cooperative Agreement NCC5-138.

  4. Non-Gaussian Velocity Distributions in Solar Flares from Extreme Ultraviolet Lines: A Possible Diagnostic of Ion Acceleration

    International Nuclear Information System (INIS)

    Jeffrey, Natasha L. S.; Fletcher, Lyndsay; Labrosse, Nicolas

    2017-01-01

    In a solar flare, a large fraction of the magnetic energy released is converted rapidly to the kinetic energy of non-thermal particles and bulk plasma motion. This will likely result in non-equilibrium particle distributions and turbulent plasma conditions. We investigate this by analyzing the profiles of high temperature extreme ultraviolet emission lines from a major flare (SOL2014-03-29T17:44) observed by the EUV Imaging Spectrometer (EIS) on Hinode . We find that in many locations the line profiles are non-Gaussian, consistent with a kappa distribution of emitting ions with properties that vary in space and time. At the flare footpoints, close to sites of hard X-ray emission from non-thermal electrons, the κ index for the Fe xvi 262.976 Å line at 3 MK takes values of 3–5. In the corona, close to a low-energy HXR source, the Fe xxiii 263.760 Å line at 15 MK shows κ values of typically 4–7. The observed trends in the κ parameter show that we are most likely detecting the properties of the ion population rather than any instrumental effects. We calculate that a non-thermal ion population could exist if locally accelerated on timescales ≤0.1 s. However, observations of net redshifts in the lines also imply the presence of plasma downflows, which could lead to bulk turbulence, with increased non-Gaussianity in cooler regions. Both interpretations have important implications for theories of solar flare particle acceleration.

  5. Shrinking the Synchrotron : Tabletop Extreme Ultraviolet Absorption of Transition-Metal Complexes

    NARCIS (Netherlands)

    Zhang, Kaili; Lin, Ming Fu; Ryland, Elizabeth S.; Verkamp, Max A.; Benke, Kristin; De Groot, Frank M F; Girolami, Gregory S.; Vura-Weis, Josh

    2016-01-01

    We show that the electronic structure of molecular first-row transition-metal complexes can be reliably measured using tabletop high-harmonic XANES at the metal M2,3 edge. Extreme ultraviolet photons in the 50-70 eV energy range probe 3p → 3d transitions, with the same selection rules as soft X-ray

  6. Plasma sources for EUV lithography exposure tools

    International Nuclear Information System (INIS)

    Banine, Vadim; Moors, Roel

    2004-01-01

    The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13-14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components

  7. X ray and EUV spectroscopic measurements of highly charged tungsten ions relevant to fusion plasmas

    International Nuclear Information System (INIS)

    Radtke, R; Biedermann, C; Mandelbaum, P; Schwob, J L

    2007-01-01

    Using high-resolution x ray and extreme ultraviolet (EUV) spectrometry, the line emission of W 28+ - W 50+ ions was measured at the Berlin Electron Beam Ion Trap (EBIT). Our study encompasses a wide range of wavelengths (5-800 A) and includes the observation of electric and magnetic dipole lines. The results of our measurements are compared with predicted transition wavelengths from ab initioatomic structure calculations

  8. Optical properties and electronic transitions of zinc oxide, ferric oxide, cerium oxide, and samarium oxide in the ultraviolet and extreme ultraviolet

    DEFF Research Database (Denmark)

    Pauly, N; Yubero, F; Espinós, J P

    2017-01-01

    Optical properties and electronic transitions of four oxides, namely zinc oxide, ferric oxide, cerium oxide, and samarium oxide, are determined in the ultraviolet and extreme ultraviolet by reflection electron energy loss spectroscopy using primary electron energies in the range 0.3-2.0 ke...

  9. The EUV spectrophotometer on Atmosphere Explorer.

    Science.gov (United States)

    Hinteregger, H. E.; Bedo, D. E.; Manson, J. E.

    1973-01-01

    An extreme ultraviolet (EUV) spectrophotometer for measurements of solar radiation at wavelengths ranging from 140 to 1850 A will be included in the payload of each of the three Atmosphere-Explorer (AE) missions, AE-C, -D, and -E. The instrument consists of 24 grating monochromators, 12 of which can be telecommanded either to execute 128-step scans each covering a relatively small section of the total spectrophotometer wavelength range or to maintain fixed (command-selected) wavelength positions. The remaining 12 nonscan monochromators operate at permanently fixed wavelengths and view only a small fraction of the solar disk except for one viewing the whole sun in H Lyman alpha. Ten of the 12 scan-capable monochromators also view the entire solar disk since their primary function is to measure the total fluxes independent of the distribution of sources across the solar disk.

  10. Spectral lines and characteristic of temporal variations in photoionized plasmas induced with laser-produced plasma extreme ultraviolet source

    Science.gov (United States)

    Saber, I.; Bartnik, A.; Wachulak, P.; Skrzeczanowski, W.; Jarocki, R.; Fiedorowicz, H.

    2017-11-01

    Spectral lines for Kr/Ne/H2 photoionized plasma in the ultraviolet and visible (UV/Vis) wavelength ranges have been created using a laser-produced plasma (LPP) EUV source. The source is based on a double-stream gas puff target irradiated with a commercial Nd:YAG laser. The laser pulses were focused onto a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Spectral lines from photoionization in neutral Kr/Ne/H2 and up to few charged states were observed. The intense emission lines were associated with the Kr transition lines. Experimental and theoretical investigations on intensity variations for some ionic lines are presented. A decrease in the intensity with the delay time between the laser pulse and the spectrum acquisition was revealed. Electron temperature and electron density in the photoionized plasma have been estimated from the characteristic emission lines. Temperature was obtained using Boltzmann plot method, assuming that the population density of atoms and ions are considered in a local thermodynamic equilibrium (LTE). Electron density was calculated from the Stark broadening profile. The temporal evaluation of the plasma and the way of optimizing the radiation intensity of LPP EUV sources is discussed.

  11. PROJECTION EFFECTS IN CORONAL DIMMINGS AND ASSOCIATED EUV WAVE EVENT

    Energy Technology Data Exchange (ETDEWEB)

    Dissauer, K.; Temmer, M.; Veronig, A. M.; Vanninathan, K. [IGAM/Institute of Physics, University of Graz, Universitätsplatz 5/II, A-8010 Graz (Austria); Magdalenić, J., E-mail: karin.dissauer@uni-graz.at [Solar-Terrestrial Center of Excellence-SIDC, Royal Observatory of Belgium, Av. Circulaire 3, B-1180 Brussels (Belgium)

    2016-10-20

    We investigate the high-speed ( v > 1000 km s{sup −1}) extreme-ultraviolet (EUV) wave associated with an X1.2 flare and coronal mass ejection (CME) from NOAA active region 11283 on 2011 September 6 (SOL2011-09-06T22:12). This EUV wave features peculiar on-disk signatures; in particular, we observe an intermittent “disappearance” of the front for 120 s in Solar Dynamics Observatory ( SDO )/AIA 171, 193, 211 Å data, whereas the 335 Å filter, sensitive to hotter plasmas ( T ∼ 2.5 MK), shows a continuous evolution of the wave front. The eruption was also accompanied by localized coronal dimming regions. We exploit the multi-point quadrature position of SDO and STEREO-A , to make a thorough analysis of the EUV wave evolution, with respect to its kinematics and amplitude evolution and reconstruct the SDO line-of-sight (LOS) direction of the identified coronal dimming regions in STEREO-A . We show that the observed intensities of the dimming regions in SDO /AIA depend on the structures that are lying along their LOS and are the combination of their individual intensities, e.g., the expanding CME body, the enhanced EUV wave, and the CME front. In this context, we conclude that the intermittent disappearance of the EUV wave in the AIA 171, 193, and 211 Å filters, which are channels sensitive to plasma with temperatures below ∼2 MK is also caused by such LOS integration effects. These observations clearly demonstrate that single-view image data provide us with limited insight to correctly interpret coronal features.

  12. Slowly varying component of extreme ultraviolet solar radiation and its relation to solar radio radiation

    Science.gov (United States)

    Chapman, R. D.; Neupert, W. M.

    1974-01-01

    A study of the correlations between solar EUV line fluxes and solar radio fluxes has been carried out. A calibration for the Goddard Space Flight Center EUV spectrum is suggested. The results are used to obtain an equation for the absolute EUV flux for several lines in the 150- to 400-A region and the total flux of 81 intense lines in the region, the 2800-MHz radio flux being used as independent variable.

  13. Tabletop single-shot extreme ultraviolet Fourier transform holography of an extended object.

    Science.gov (United States)

    Malm, Erik B; Monserud, Nils C; Brown, Christopher G; Wachulak, Przemyslaw W; Xu, Huiwen; Balakrishnan, Ganesh; Chao, Weilun; Anderson, Erik; Marconi, Mario C

    2013-04-22

    We demonstrate single and multi-shot Fourier transform holography with the use of a tabletop extreme ultraviolet laser. The reference wave was produced by a Fresnel zone plate with a central opening that allowed the incident beam to illuminate the sample directly. The high reference wave intensity allows for larger objects to be imaged compared to mask-based lensless Fourier transform holography techniques. We obtain a spatial resolution of 169 nm from a single laser pulse and a resolution of 128 nm from an accumulation of 20 laser pulses for an object ~11x11μm(2) in size. This experiment utilized a tabletop extreme ultraviolet laser that produces a highly coherent ~1.2 ns laser pulse at 46.9 nm wavelength.

  14. Extreme ultraviolet observations of G191-B2B and the local interstellar medium with the Hopkins Ultraviolet Telescope

    Science.gov (United States)

    Kimble, Randy A.; Davidsen, Arthur F.; Blair, William P.; Bowers, Charles W.; Van Dyke Dixon, W.; Durrance, Samuel T.; Feldman, Paul D.; Ferguson, Henry C.; Henry, Richard C.; Kriss, Gerard A.

    1993-01-01

    During the Astro-l mission in 1990 December, the Hopkins Ultraviolet Telescope (HUT) was used to observe the extreme ultraviolet spectrum (415-912 A) of the hot DA white dwarf GI91-B2B. Absorption by neutral helium shortward of the 504 A He I absorption edge is clearly detected in the raw spectrum. Model fits to the observed spectrum require interstellar neutral helium and neutral hydrogen column densities of 1.45 +/- 0.065 x 10 exp 17/sq cm and 1.69 +/- 0.12 x 10 exp 18/sq cm, respectively. Comparison of the neutral columns yields a direct assessment of the ionization state of the local interstellar cloud surrounding the Sun. The neutral hydrogen to helium ratio of 11.6 +/- 1.0 observed by HUT strongly contradicts the widespread view that hydrogen is much more ionized than helium in the local interstellar medium, a view which has motivated some exotic theoretical explanations for the supposed high ionization.

  15. A NOISE ADAPTIVE FUZZY EQUALIZATION METHOD FOR PROCESSING SOLAR EXTREME ULTRAVIOLET IMAGES

    Energy Technology Data Exchange (ETDEWEB)

    Druckmueller, M., E-mail: druckmuller@fme.vutbr.cz [Institute of Mathematics, Faculty of Mechanical Engineering, Brno University of Technology, Technicka 2, 616 69 Brno (Czech Republic)

    2013-08-15

    A new image enhancement tool ideally suited for the visualization of fine structures in extreme ultraviolet images of the corona is presented in this paper. The Noise Adaptive Fuzzy Equalization method is particularly suited for the exceptionally high dynamic range images from the Atmospheric Imaging Assembly instrument on the Solar Dynamics Observatory. This method produces artifact-free images and gives significantly better results than methods based on convolution or Fourier transform which are often used for that purpose.

  16. Extreme Ultraviolet Imaging of Electron Heated Targets in Petawatt Laser Experiments

    International Nuclear Information System (INIS)

    Ma, T.; MacPhee, A.; Key, M.; Akli, K.; Mackinnon, A.; Chen, C.; Barbee, T.; Freeman, R.; King, J.; Link, A.; Offermann, D.; Ovchinnikov, V.; Patel, P.; Stephens, R.; VanWoerkom, L.; Zhang, B.; Beg, F.

    2007-01-01

    The study of the transport of electrons, and the flow of energy into a solid target or dense plasma, is instrumental in the development of fast ignition inertial confinement fusion. An extreme ultraviolet (XUV) imaging diagnostic at 256 eV and 68 eV provides information about heating and energy deposition within petawatt laser-irradiated targets. XUV images of several irradiated solid targets are presented

  17. Extreme ultraviolet spectroscopy of highly charged argon ions at the Berlin EBIT

    International Nuclear Information System (INIS)

    Biedermann, C; Radtke, R; Fussmann, G; Allen, F I

    2007-01-01

    Extreme ultraviolet radiation from highly charged argon was investigated at the Berlin Electron Beam Ion Trap with a 2 m grazing incidence spectrometer. Lines in the wavelength range 150 to 660 A originating from C-like Ar 12+ to Li-like Ar 15+ ions have been identified and are compared with database information from solar line lists and predictions. Line ratios for the observed resonance, intercombination and forbidden lines offer important diagnostic capabilities for low density, hot plasmas

  18. Spontaneous and artificial direct nanostructuring of solid surface by extreme ultraviolet laser with nanosecond pulses

    Czech Academy of Sciences Publication Activity Database

    Koláček, Karel; Schmidt, Jiří; Štraus, Jaroslav; Frolov, Oleksandr; Prukner, Václav; Melich, Radek; Psota, Pavel

    2016-01-01

    Roč. 34, č. 1 (2016), s. 11-22 ISSN 0263-0346 Institutional support: RVO:61389021 Keywords : Extreme ultraviolet (XUV) interferometer * Aspheric interferometer mirrors * Multilayer reflection coating for 46.9 nm * Ar8+ laser application * XUV direct nanostructuring Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.420, year: 2016 http://dx.doi.org/10.1017/S0263034615000786

  19. The EUV Helium Spectrum in the Quiet Sun: A By-Product of Coronal Emission?

    Science.gov (United States)

    Andretta, Vincenzo; DelZanna, Giulio; Jordan, Stuart D.; Oegerle, William (Technical Monitor)

    2002-01-01

    In this paper we test one of the mechanisms proposed to explain the intensities and other observed properties of the solar helium spectrum, and in particular of its Extreme-Ultraviolet (EUV) resonance lines. The so-called Photoionisation-Recombination (P-R) mechanism involves photoionisation of helium atoms and ions by EUV coronal radiation, followed by recombination cascades. We present calibrated measurements of EUV flux obtained with the two CDS spectrometers on board SOHO, in quiescent solar regions. We were able to obtain an essentially complete estimate of the total photoionizing flux in the wavelength range below 504 A (the photoionisation threshold for He(I)), as well as simultaneous measurements with the same instruments of the intensities of the strongest EUV helium lines: He(II) lambda304, He(I) lambda584, and He(I) lambda537. We find that there are not enough EUV photons to account for the observed helium line intensities. More specifically, we conclude that He(II) intensities cannot be explained by the P-R mechanism. Our results, however, leave open the possibility that the He(I) spectrum could be formed by the P-R mechanism, with the He(II) lambda304 line as a significant photoionizating source.

  20. A New Relationship Between Soft X-Rays and EUV Flare Light Curves

    Science.gov (United States)

    Thiemann, Edward

    2016-05-01

    Solar flares are the result of magnetic reconnection in the solar corona which converts magnetic energy into kinetic energy resulting in the rapid heating of solar plasma. As this plasma cools, it emits radiation at different EUV wavelengths when the dropping temperature passes a line’s temperature of formation. This results in a delay in the emissions from cooler EUV lines relative to hotter EUV lines. Therefore, characterizing how this hot plasma cools is important for understanding how the corresponding geo-effective extreme ultraviolet (EUV) irradiance evolves in time. I present a simple new framework in which to study flare cooling by using a Lumped Element Thermal Model (LETM). LETM is frequently used in science and engineering to simplify a complex multi-dimensional thermal system by reducing it to a 0-D thermal circuit. For example, a structure that conducts heat out of a system is simplified with a resistive element and a structure that allows a system to store heat is simplified with a capacitive element. A major advantage of LETM is that the specific geometry of a system can be ignored, allowing for an intuitive analysis of the major thermal processes. I show that LETM is able to accurately reproduce the temporal evolution of cooler flare emission lines based on hotter emission line evolution. In particular, it can be used to predict the evolution of EUV flare light curves using the NOAA X-Ray Sensor (XRS).

  1. Advanced 0.3-NA EUV lithography capabilities at the ALS

    International Nuclear Information System (INIS)

    Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A.; Hoef, Brian; Jackson, Keith

    2005-01-01

    For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines

  2. Reconstruction of the solar EUV irradiance from 1996 to 2010 based on SOHO/EIT images

    Directory of Open Access Journals (Sweden)

    Haberreiter Margit

    2014-01-01

    Full Text Available The solar Extreme UltraViolet (EUV spectrum has important effects on the Earth’s upper atmosphere. For a detailed investigation of these effects it is important to have a consistent data series of the EUV spectral irradiance available. We present a reconstruction of the solar EUV irradiance based on SOHO/EIT images, along with synthetic spectra calculated using different coronal features which represent the brightness variation of the solar atmosphere. The EIT images are segmented with the SPoCA2 tool which separates the features based on a fixed brightness classification scheme. With the SOLMOD code we then calculate intensity spectra for the 10–100 nm wavelength range and each of the coronal features. Weighting the intensity spectra with the area covered by each of the features yields the temporal variation of the EUV spectrum. The reconstructed spectrum is then validated against the spectral irradiance as observed with SOHO/SEM. Our approach leads to good agreement between the reconstructed and the observed spectral irradiance. This study is an important step toward understanding variations in the solar EUV spectrum and ultimately its effect on the Earth’s upper atmosphere.

  3. Impurity study of TMX using ultraviolet spectroscopy

    International Nuclear Information System (INIS)

    Allen, S.L.; Strand, O.T.; Moos, H.W.; Fortner, R.J.; Nash, T.J.; Dietrich, D.D.

    1981-01-01

    An extreme ultraviolet (EUV) study of the emissions from intrinsic and injected impurities in TMX is presented. Two survey spectrographs were used to determine that the major impurities present were oxygen, nitrogen, carbon, and titanium. Three absolutely-calibrated monochromators were used to measure the time histories and radial profiles of these impurity emissions in the central cell and each plug. Two of these instruments were capable of obtaining radial profiles as a function of time in a single shot

  4. Emission spectra of photoionized plasmas induced by intense EUV pulses: Experimental and theoretical investigations

    Science.gov (United States)

    Saber, Ismail; Bartnik, Andrzej; Skrzeczanowski, Wojciech; Wachulak, Przemysław; Jarocki, Roman; Fiedorowicz, Henryk

    2017-03-01

    Experimental measurements and numerical modeling of emission spectra in photoionized plasma in the ultraviolet and visible light (UV/Vis) range for noble gases have been investigated. The photoionized plasmas were created using laser-produced plasma (LPP) extreme ultraviolet (EUV) source. The source was based on a gas puff target; irradiated with 10ns/10J/10Hz Nd:YAG laser. The EUV radiation pulses were collected and focused using grazing incidence multifoil EUV collector. The laser pulses were focused on a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of gases resulted in a formation of low temperature photoionized plasmas emitting radiation in the UV/Vis spectral range. Atomic photoionized plasmas produced this way consisted of atomic and ionic with various ionization states. The most dominated observed spectral lines originated from radiative transitions in singly charged ions. To assist in a theoretical interpretation of the measured spectra, an atomic code based on Cowan's programs and a collisional-radiative PrismSPECT code have been used to calculate the theoretical spectra. A comparison of the calculated spectral lines with experimentally obtained results is presented. Electron temperature in plasma is estimated using the Boltzmann plot method, by an assumption that a local thermodynamic equilibrium (LTE) condition in the plasma is validated in the first few ionization states. A brief discussion for the measured and computed spectra is given.

  5. EUV and Magnetic Activities Associated with Type-I Solar Radio Bursts

    Science.gov (United States)

    Li, C. Y.; Chen, Y.; Wang, B.; Ruan, G. P.; Feng, S. W.; Du, G. H.; Kong, X. L.

    2017-06-01

    Type-I bursts ( i.e. noise storms) are the earliest-known type of solar radio emission at the meter wavelength. They are believed to be excited by non-thermal energetic electrons accelerated in the corona. The underlying dynamic process and exact emission mechanism still remain unresolved. Here, with a combined analysis of extreme ultraviolet (EUV), radio and photospheric magnetic field data of unprecedented quality recorded during a type-I storm on 30 July 2011, we identify a good correlation between the radio bursts and the co-spatial EUV and magnetic activities. The EUV activities manifest themselves as three major brightening stripes above a region adjacent to a compact sunspot, while the magnetic field there presents multiple moving magnetic features (MMFs) with persistent coalescence or cancelation and a morphologically similar three-part distribution. We find that the type-I intensities are correlated with those of the EUV emissions at various wavelengths with a correlation coefficient of 0.7 - 0.8. In addition, in the region between the brightening EUV stripes and the radio sources there appear consistent dynamic motions with a series of bi-directional flows, suggesting ongoing small-scale reconnection there. Mainly based on the induced connection between the magnetic motion at the photosphere and the EUV and radio activities in the corona, we suggest that the observed type-I noise storms and the EUV brightening activities are the consequence of small-scale magnetic reconnection driven by MMFs. This is in support of the original proposal made by Bentley et al. ( Solar Phys. 193, 227, 2000).

  6. Production of narrowband tunable extreme-ultraviolet radiation by noncollinear resonance-enhanced four-wave mixing

    NARCIS (Netherlands)

    Hannemann, S.; Hollenstein, U.; van Duijn, E.J.; Ubachs, W.M.G.

    2005-01-01

    Fourier-transform-limited extreme-ultraviolet (XUV) radiation (bandwidth ≲300 MHz) tunable around 91 nm is produced by use of two-photon resonance-enhanced four-wave mixing on the Kr resonance at 94 093 cm

  7. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    Energy Technology Data Exchange (ETDEWEB)

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  8. Development of a free-electron laser user facility for the extreme ultraviolet

    International Nuclear Information System (INIS)

    Newnam, B.E.

    1987-01-01

    A free-electron laser user facility for scientific experimentation in the extreme ultraviolet is being developed at Los Alamos. A series of laser oscillators and amplifiers, driven by a single, rf linear accelerator, will generate broadly tunable, picosecond-pulse, coherent radiation from 1 nm to 400 nm. The design and output parameters of this facility are described, comparison with synchrotron radiation sources is made, and recent progress in developing the three primary components (electron beam, undulator, and resonator mirrors) is reviewed, and various categories of scientific applications are indicated

  9. Attosecond extreme ultraviolet generation in cluster by using spatially inhomogeneous field

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Liqiang, E-mail: lqfeng-lngy@126.com [College of Science, Liaoning University of Technology, Jinzhou, 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics Chinese Academy of Sciences, Dalian 116023 (China); Liu, Hang [School of Chemical and Environmental Engineering, Liaoning University of Technology, Jinzhou 121000 (China)

    2015-01-15

    A promising method to generate the attosecond extreme ultraviolet (XUV) sources has been theoretically investigated emerging from the two-dimensional Ar{sup +} cluster driven by the spatially inhomogeneous field. The results show that with the introduction of the Ar{sup +} cluster model, not only the harmonic cutoffs are enhanced, but also the harmonic yields are reinforced. Furthermore, by properly moderating the inhomogeneity as well as the laser parameters of the inhomogeneous field, the harmonic cutoff can be further extended. As a result, three almost linearly polarized XUV pulses with durations of 40 as, 42 as, and 45 as can be obtained.

  10. High-efficiency collector design for extreme-ultraviolet and x-ray applications

    International Nuclear Information System (INIS)

    Zocchi, Fabio E.

    2006-01-01

    A design of a two-reflection mirror for nested grazing-incidence optics is proposed in which maximum overall reflectivity is achieved by making the two grazing-incidence angles equal for each ray. The design is proposed mainly for application to nonimaging collector optics for extreme-ultraviolet microlithography where the radiation emitted from a hot plasma source needs to be collected and focused on the illuminator optics. For completeness, the design of a double-reflection mirror with equal reflection angles is also briefly outlined for the case of an object at infinity for possible use in x-ray applications

  11. Extreme-ultraviolet wavelength and lifetime measurements in highly ionized krypton

    CERN Document Server

    Kukla, K W; Vogt, C M V; Berry, H G; Dunford, R W; Curtis, L J; Cheng, S

    2005-01-01

    We have studied the spectrum of highly ionized krypton in the extreme-ultraviolet wavelength region (50-300 Aa), using beam-foil excitation of fast krypton ions at the Argonne ATLAS accelerator facility. We report measurements of transition wavelengths and excited-state lifetimes for n=2 states in the lithiumlike, berylliumlike, and boronlike ions, Kr/sup 31+,32+,33+/. Excited state lifetimes ranging from 10 ps to 3 ns were measured by acquiring time- of-flight-delayed spectra with a position-sensitive multichannel detector.

  12. Final Report: Spectral Analysis of L-shell Data in the Extreme Ultraviolet from Tokamak Plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Lepson, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Jernigan, J. Garrett [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Beiersdorfer, P. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-02-05

    We performed detailed analyses of extreme ultraviolet spectra taken by Lawrence Livermore National Laboratory on the National Spherical Torus Experiment at Princeton Plasma Physics Laboratory and on the Alcator CKmod tokamak at the M.I.T. Plasma Science and Fusion Center. We focused on the emission of iron, carbon, and other elements in several spectral band pass regions covered by the Atmospheric Imaging Assembly on the Solar Dynamics Observatory. We documented emission lines of carbon not found in currently used solar databases and demonstrated that this emission was due to charge exchange.

  13. Dissociative multiple ionization of diatomic molecules by extreme-ultraviolet free-electron-laser pulses

    DEFF Research Database (Denmark)

    Madsen, Lars Bojer; Leth, Henriette Astrup

    2011-01-01

    Nuclear dynamics in dissociative multiple ionization processes of diatomic molecules exposed to extreme-ultraviolet free-electron-laser pulses is studied theoretically using the Monte Carlo wave packet approach. By simulated detection of the emitted electrons, the model reduces a full propagation...... of the system to propagations of the nuclear wave packet in one specific electronic charge state at a time. Suggested ionization channels can be examined, and kinetic energy release spectra for the nuclei can be calculated and compared with experiments. Double ionization of O2 is studied as an example, and good...

  14. High-efficiency collector design for extreme-ultraviolet and x-ray applications.

    Science.gov (United States)

    Zocchi, Fabio E

    2006-12-10

    A design of a two-reflection mirror for nested grazing-incidence optics is proposed in which maximum overall reflectivity is achieved by making the two grazing-incidence angles equal for each ray. The design is proposed mainly for application to nonimaging collector optics for extreme-ultraviolet microlithography where the radiation emitted from a hot plasma source needs to be collected and focused on the illuminator optics. For completeness, the design of a double- reflection mirror with equal reflection angles is also briefly outlined for the case of an object at infinity for possible use in x-ray applications.

  15. Stellar observations with the Voyager EUV objective grating spectrograph

    International Nuclear Information System (INIS)

    Holberg, J.B.; Polidan, R.S.; Barry, D.C.

    1986-01-01

    During the periods of interplanetary cruise the Voyager ultraviolet spectrometers are used to provide unique and otherwise unobtainable observations in the extreme ultraviolet (EUV, 500 to 1200) and the far ultraviolet (FUV, 912 to 1220 A). These observations include the spectra of hot stellar sources as well as emission from the interplanetary medium. Recent results of note include: (1) extensive spectrophotometric coverage of a superoutburst of the dwarf nova VW Hydri, which showed a clear 1/2 day delay in the outburst at 1000 A relative to that observed in the optical and a curious dip in the FUV light curve near maximum light. The Voyager observations were part of a comprehensive and highly successful campaign involving EXOSAT, IUE and ground based observations of this dwarf nova; (2) a comprehensive study of Be star spectra and variability. These results show the critical importance of FUV observations in the study of the effects of stellar rotation in hot stars; (3) the detection of a strong O VI absorption feature in the spectrum of the PG 1159-like object H1504+65. This detection along with the optical identification of weak O IV lines was a key to the interpretation of this object; which is of extremely high (>150,000K) temperature and appears to be a unique example of a stellar atmosphere devoid of H and He; (4) an analysis of an extremely long duration spectrum of the EUV and FUV sky background, which establishes important new upper limits on both continuum and line emission. This result also provide the first detection of interplanetary Lyman gamma

  16. PERSISTENCE MAPPING USING EUV SOLAR IMAGER DATA

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, B. J. [NASA Goddard Space Flight Center, Code 671, Greenbelt, MD 20771 (United States); Young, C. A., E-mail: barbara.j.thompson@nasa.gov [NASA Goddard Space Flight Center, Code 670, Greenbelt, MD 20771 (United States)

    2016-07-01

    We describe a simple image processing technique that is useful for the visualization and depiction of gradually evolving or intermittent structures in solar physics extreme-ultraviolet imagery. The technique is an application of image segmentation, which we call “Persistence Mapping,” to isolate extreme values in a data set, and is particularly useful for the problem of capturing phenomena that are evolving in both space and time. While integration or “time-lapse” imaging uses the full sample (of size N ), Persistence Mapping rejects ( N − 1)/ N of the data set and identifies the most relevant 1/ N values using the following rule: if a pixel reaches an extreme value, it retains that value until that value is exceeded. The simplest examples isolate minima and maxima, but any quantile or statistic can be used. This paper demonstrates how the technique has been used to extract the dynamics in long-term evolution of comet tails, erupting material, and EUV dimming regions.

  17. Integrated approach to improving local CD uniformity in EUV patterning

    Science.gov (United States)

    Liang, Andrew; Hermans, Jan; Tran, Timothy; Viatkina, Katja; Liang, Chen-Wei; Ward, Brandon; Chuang, Steven; Yu, Jengyi; Harm, Greg; Vandereyken, Jelle; Rio, David; Kubis, Michael; Tan, Samantha; Dusa, Mircea; Singhal, Akhil; van Schravendijk, Bart; Dixit, Girish; Shamma, Nader

    2017-03-01

    Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies. Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development. Illumination

  18. Free-electron laser emission architecture impact on extreme ultraviolet lithography

    Science.gov (United States)

    Hosler, Erik R.; Wood, Obert R.; Barletta, William A.

    2017-10-01

    Laser-produced plasma (LPP) EUV sources have demonstrated ˜125 W at customer sites, establishing confidence in EUV lithography (EUVL) as a viable manufacturing technology. However, for extension to the 3-nm technology node and beyond, existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half-field exposures) and/or EUV multipatterning (requiring increased wafer throughput proportional to the number of exposure passes). Both development paths will require a substantial increase in EUV source power to maintain the economic viability of the technology, creating an opportunity for free-electron laser (FEL) EUV sources. FEL-based EUV sources offer an economic, high-power/single-source alternative to LPP EUV sources. Should FELs become the preferred next-generation EUV source, the choice of FEL emission architecture will greatly affect its operational stability and overall capability. A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) self-amplified spontaneous emission, (2) regenerative amplifier, or (3) self-seeding. Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provides a framework for future FEL design and enablement for EUVL applications.

  19. Characterization of extreme ultraviolet emission from tin-droplets irradiated with Nd:YAG laser plasmas

    International Nuclear Information System (INIS)

    Aota, T; Nakai, Y; Fujioka, S; Shimomura, M; Nishimura, H; Nishihara, N; Miyanaga, N; Izawa, Y; Mima, K; Fujiwara, E

    2008-01-01

    EUV emission from spherical and planer targets were precisely characterized as an experimental database for use in EUV source generation at high repetition rates. In the single-shot base experiments, conversion efficiency as high as those for the plasma geometry has been demonstrated. The integrated experiment was made with 10 Hz plasma generation, obtained conversion efficiency is low mainly due to unstable positioning of the droplets

  20. EUV multilayer defect compensation (MDC) by absorber pattern modification: from theory to wafer validation

    Science.gov (United States)

    Pang, Linyong; Hu, Peter; Satake, Masaki; Tolani, Vikram; Peng, Danping; Li, Ying; Chen, Dongxue

    2011-11-01

    According to the ITRS roadmap, mask defects are among the top technical challenges to introduce extreme ultraviolet (EUV) lithography into production. Making a multilayer defect-free extreme ultraviolet (EUV) blank is not possible today, and is unlikely to happen in the next few years. This means that EUV must work with multilayer defects present on the mask. The method proposed by Luminescent is to compensate effects of multilayer defects on images by modifying the absorber patterns. The effect of a multilayer defect is to distort the images of adjacent absorber patterns. Although the defect cannot be repaired, the images may be restored to their desired targets by changing the absorber patterns. This method was first introduced in our paper at BACUS 2010, which described a simple pixel-based compensation algorithm using a fast multilayer model. The fast model made it possible to complete the compensation calculations in seconds, instead of days or weeks required for rigorous Finite Domain Time Difference (FDTD) simulations. Our SPIE 2011 paper introduced an advanced compensation algorithm using the Level Set Method for 2D absorber patterns. In this paper the method is extended to consider process window, and allow repair tool constraints, such as permitting etching but not deposition. The multilayer defect growth model is also enhanced so that the multilayer defect can be "inverted", or recovered from the top layer profile using a calibrated model.

  1. EIT: Solar corona synoptic observations from SOHO with an Extreme-ultraviolet Imaging Telescope

    Science.gov (United States)

    Delaboudiniere, J. P.; Gabriel, A. H.; Artzner, G. E.; Michels, D. J.; Dere, K. P.; Howard, R. A.; Catura, R.; Stern, R.; Lemen, J.; Neupert, W.

    1988-01-01

    The Extreme-ultraviolet Imaging Telescope (EIT) of SOHO (solar and heliospheric observatory) will provide full disk images in emission lines formed at temperatures that map solar structures ranging from the chromospheric network to the hot magnetically confined plasma in the corona. Images in four narrow bandpasses will be obtained using normal incidence multilayered optics deposited on quadrants of a Ritchey-Chretien telescope. The EIT is capable of providing a uniform one arc second resolution over its entire 50 by 50 arc min field of view. Data from the EIT will be extremely valuable for identifying and interpreting the spatial and temperature fine structures of the solar atmosphere. Temporal analysis will provide information on the stability of these structures and identify dynamical processes. EIT images, issued daily, will provide the global corona context for aid in unifying the investigations and in forming the observing plans for SOHO coronal instruments.

  2. Operation of a free-electron laser from the extreme ultraviolet to the water window

    Science.gov (United States)

    Ackermann, W.; Asova, G.; Ayvazyan, V.; Azima, A.; Baboi, N.; Bähr, J.; Balandin, V.; Beutner, B.; Brandt, A.; Bolzmann, A.; Brinkmann, R.; Brovko, O. I.; Castellano, M.; Castro, P.; Catani, L.; Chiadroni, E.; Choroba, S.; Cianchi, A.; Costello, J. T.; Cubaynes, D.; Dardis, J.; Decking, W.; Delsim-Hashemi, H.; Delserieys, A.; di Pirro, G.; Dohlus, M.; Düsterer, S.; Eckhardt, A.; Edwards, H. T.; Faatz, B.; Feldhaus, J.; Flöttmann, K.; Frisch, J.; Fröhlich, L.; Garvey, T.; Gensch, U.; Gerth, Ch.; Görler, M.; Golubeva, N.; Grabosch, H.-J.; Grecki, M.; Grimm, O.; Hacker, K.; Hahn, U.; Han, J. H.; Honkavaara, K.; Hott, T.; Hüning, M.; Ivanisenko, Y.; Jaeschke, E.; Jalmuzna, W.; Jezynski, T.; Kammering, R.; Katalev, V.; Kavanagh, K.; Kennedy, E. T.; Khodyachykh, S.; Klose, K.; Kocharyan, V.; Körfer, M.; Kollewe, M.; Koprek, W.; Korepanov, S.; Kostin, D.; Krassilnikov, M.; Kube, G.; Kuhlmann, M.; Lewis, C. L. S.; Lilje, L.; Limberg, T.; Lipka, D.; Löhl, F.; Luna, H.; Luong, M.; Martins, M.; Meyer, M.; Michelato, P.; Miltchev, V.; Möller, W. D.; Monaco, L.; Müller, W. F. O.; Napieralski, O.; Napoly, O.; Nicolosi, P.; Nölle, D.; Nuñez, T.; Oppelt, A.; Pagani, C.; Paparella, R.; Pchalek, N.; Pedregosa-Gutierrez, J.; Petersen, B.; Petrosyan, B.; Petrosyan, G.; Petrosyan, L.; Pflüger, J.; Plönjes, E.; Poletto, L.; Pozniak, K.; Prat, E.; Proch, D.; Pucyk, P.; Radcliffe, P.; Redlin, H.; Rehlich, K.; Richter, M.; Roehrs, M.; Roensch, J.; Romaniuk, R.; Ross, M.; Rossbach, J.; Rybnikov, V.; Sachwitz, M.; Saldin, E. L.; Sandner, W.; Schlarb, H.; Schmidt, B.; Schmitz, M.; Schmüser, P.; Schneider, J. R.; Schneidmiller, E. A.; Schnepp, S.; Schreiber, S.; Seidel, M.; Sertore, D.; Shabunov, A. V.; Simon, C.; Simrock, S.; Sombrowski, E.; Sorokin, A. A.; Spanknebel, P.; Spesyvtsev, R.; Staykov, L.; Steffen, B.; Stephan, F.; Stulle, F.; Thom, H.; Tiedtke, K.; Tischer, M.; Toleikis, S.; Treusch, R.; Trines, D.; Tsakov, I.; Vogel, E.; Weiland, T.; Weise, H.; Wellhöfer, M.; Wendt, M.; Will, I.; Winter, A.; Wittenburg, K.; Wurth, W.; Yeates, P.; Yurkov, M. V.; Zagorodnov, I.; Zapfe, K.

    2007-06-01

    We report results on the performance of a free-electron laser operating at a wavelength of 13.7 nm where unprecedented peak and average powers for a coherent extreme-ultraviolet radiation source have been measured. In the saturation regime, the peak energy approached 170 µJ for individual pulses, and the average energy per pulse reached 70 µJ. The pulse duration was in the region of 10 fs, and peak powers of 10 GW were achieved. At a pulse repetition frequency of 700 pulses per second, the average extreme-ultraviolet power reached 20 mW. The output beam also contained a significant contribution from odd harmonics of approximately 0.6% and 0.03% for the 3rd (4.6 nm) and the 5th (2.75 nm) harmonics, respectively. At 2.75 nm the 5th harmonic of the radiation reaches deep into the water window, a wavelength range that is crucially important for the investigation of biological samples.

  3. Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

    Energy Technology Data Exchange (ETDEWEB)

    Ziani, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France); Delmotte, F., E-mail: Franck.Delmotte@InstitutOptique.fr [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Le Paven-Thivet, C. [Institut d' Electronique et de Télécommunications de Rennes (IETR) UMR-CNRS 6164, Université de Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex France (France); Meltchakov, E.; Jérome, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Roulliay, M. [Institut des Sciences Moléculaires d’Orsay UMR 8214, Univ Paris Sud, 91405 Orsay France (France); Bridou, F. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Gasc, K. [Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France)

    2014-02-03

    In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B{sub 4}C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source.

  4. Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

    International Nuclear Information System (INIS)

    Ziani, A.; Delmotte, F.; Le Paven-Thivet, C.; Meltchakov, E.; Jérome, A.; Roulliay, M.; Bridou, F.; Gasc, K.

    2014-01-01

    In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B 4 C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source

  5. CAN A NANOFLARE MODEL OF EXTREME-ULTRAVIOLET IRRADIANCES DESCRIBE THE HEATING OF THE SOLAR CORONA?

    Energy Technology Data Exchange (ETDEWEB)

    Tajfirouze, E.; Safari, H. [Department of Physics, University of Zanjan, P.O. Box 45195-313, Zanjan (Iran, Islamic Republic of)

    2012-01-10

    Nanoflares, the basic units of impulsive energy release, may produce much of the solar background emission. Extrapolation of the energy frequency distribution of observed microflares, which follows a power law to lower energies, can give an estimation of the importance of nanoflares for heating the solar corona. If the power-law index is greater than 2, then the nanoflare contribution is dominant. We model a time series of extreme-ultraviolet emission radiance as random flares with a power-law exponent of the flare event distribution. The model is based on three key parameters: the flare rate, the flare duration, and the power-law exponent of the flare intensity frequency distribution. We use this model to simulate emission line radiance detected in 171 A, observed by Solar Terrestrial Relation Observatory/Extreme-Ultraviolet Imager and Solar Dynamics Observatory/Atmospheric Imaging Assembly. The observed light curves are matched with simulated light curves using an Artificial Neural Network, and the parameter values are determined across the active region, quiet Sun, and coronal hole. The damping rate of nanoflares is compared with the radiative losses cooling time. The effect of background emission, data cadence, and network sensitivity on the key parameters of the model is studied. Most of the observed light curves have a power-law exponent, {alpha}, greater than the critical value 2. At these sites, nanoflare heating could be significant.

  6. Compact laser-produced plasma EUV sources for processing polymers and nanoimaging

    International Nuclear Information System (INIS)

    Fiedorowicz, H.; Bartnik, A.; Jarocki, R.; Kostecki, J.; Szczurek, M.; Wachulak, P.

    2010-01-01

    Complete text of publication follows. Extreme ultraviolet (EUV) can be produced form a high-temperature plasma generated by interaction of high power laser pulses with matter. Laser plasma EUV sources are considered to be used in various applications in physics, material science, biomedicine, and technology. In the paper new compact laser plasma EUV sources developed for processing polymers and imaging are presented. The sources are based on a gas puff target formed by pulsed injection of a small amount of gas under high-pressure into a laser focus region. The use of the gas puff target instead of a solid target allows for efficient generation of EUV radiation without debris production. The compact laser plasma EUV source based on a gas puff target was developed for metrology applications. The EUV source developed for processing polymers is equipped with a grazing incidence axisymmetrical ellipsoidal mirror to focus EUV radiation in the relatively broad spectral range with the strong maximum near 10 nm. The size of the focal spot is about 1.3 mm in diameter with the maximum fluence up to 70 mJ/cm 2 . EUV radiation in the wavelength range of about 5 to 50 nm is produced by irradiation of xenon or krypton gas puff target with a Nd:YAG laser operating at 10 Hz and delivering 4 ns pulses of energy up to 0.8 J per pulse. The experiments on EUV irradiation of various polymers have been performed. Modification of polymer surfaces was achieved, primarily due to direct photo-etching with EUV photons and formation of micro- and nanostructures onto the surface. The mechanism of the interaction is similar to the UV laser ablation where energetic photons cause chemical bonds of the polymer chain to be broken. However, because of very low penetration depth of EUV radiation, the interaction region is limited to a very thin surface layer (<100 nm). This makes it possible to avoid degradation of bulk material caused by deeply penetrating UV radiation. The results of the studies

  7. Solar Cycle Variation of Microwave Polar Brightening and EUV Coronal Hole Observed by Nobeyama Radioheliograph and SDO/AIA

    Science.gov (United States)

    Kim, Sujin; Park, Jong-Yeop; Kim, Yeon-Han

    2017-08-01

    We investigate the solar cycle variation of microwave and extreme ultraviolet (EUV) intensity in latitude to compare microwave polar brightening (MPB) with the EUV polar coronal hole (CH). For this study, we used the full-sun images observed in 17 GHz of the Nobeyama Radioheliograph from 1992 July to 2016 November and in two EUV channels of the Atmospheric Imaging Assembly (AIA) 193 Å and 171 Å on the Solar Dynamics Observatory (SDO) from 2011 January to 2016 November. As a result, we found that the polar intensity in EUV is anti-correlated with the polar intensity in microwave. Since the depression of EUV intensity in the pole is mostly owing to the CH appearance and continuation there, the anti-correlation in the intensity implies the intimate association between the polar CH and the MPB. Considering the report of tet{gopal99} that the enhanced microwave brightness in the CH is seen above the enhanced photospheric magnetic field, we suggest that the pole area during the solar minimum has a stronger magnetic field than the quiet sun level and such a strong field in the pole results in the formation of the polar CH. The emission mechanism of the MPB and the physical link with the polar CH are not still fully understood. It is necessary to investigate the MPB using high resolution microwave imaging data, which can be obtained by the high performance large-array radio observatories such as the ALMA project.

  8. Spectroscopic modeling for tungsten EUV spectra

    International Nuclear Information System (INIS)

    Murakami, Izumi; Kato, Daiji; Sakaue, Hiroyuki A.; Suzuki, Chihiro; Morita, Shigeru; Goto, Motoshi; Sasaki, Akira; Nakamura, Nobuyuki; Yamamoto, Norimasa; Koike, Fumihiro

    2014-01-01

    We have constructed an atomic model for tungsten extreme ultraviolet (EUV) spectra to reconstruct characteristic spectral feature of unresolved transition array (UTA) observed at 4-7 nm for tungsten ions. In the tungsten atomic modeling, we considered fine-structure levels with the quantum principal number n up to 6 as the atomic structure and calculated the electron-impact collision cross sections by relativistic distorted-wave method, using HULLAC atomic code. We measured tungsten EUV spectra in Large Helical Device (LHD) and Compact Electron Beam Ion Trap device (CoBIT) and compared them with the model calculation. The model successfully explain series of emission peaks at 1.5-3.5 nm as n=5-4 and 6-4 transitions of W"2"4"+ - W"3"2"+ measured in CoBIT and LHD and the charge state distributions were estimated for LHD plasma. The UTA feature observed at 4-7 nm was also successfully reconstructed with our model. The peak at ∼5 nm is produced mainly by many 4f-4d transition of W"2"2"+ - W"3"5"+ ions, and the second peak at ∼6 nm is produced by 4f-4d transition of W"2"5"+ - W"2"8"+ ions, and 4d-4p inner-shell transitions, 4p"54d"n"+"1 - 4p"64d"n, of W"2"9"+ - W"3"5"+ ions. These 4d-4p inner-shell transitions become strong since we included higher excited states such as 4p"54d"n4f state, which ADAS atomic data set does not include for spectroscopic modeling with fine structure levels. (author)

  9. Bright high-repetition-rate source of narrowband extreme-ultraviolet harmonics beyond 22 eV

    Energy Technology Data Exchange (ETDEWEB)

    Wang, He [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Xu, Yiming [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Ulonska, Stefan [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Robinson, Joseph S. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Ranitovic, Predrag [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Kaindl, Robert A. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

    2015-06-11

    Novel table-top sources of extreme-ultraviolet light based on high-harmonic generation yield unique insight into the fundamental properties of molecules, nanomaterials or correlated solids, and enable advanced applications in imaging or metrology. Extending high-harmonic generation to high repetition rates portends great experimental benefits, yet efficient extreme-ultraviolet conversion of correspondingly weak driving pulses is challenging. In this article, we demonstrate a highly-efficient source of femtosecond extreme-ultraviolet pulses at 50-kHz repetition rate, utilizing the ultraviolet second-harmonic focused tightly into Kr gas. In this cascaded scheme, a photon flux beyond ≈3 × 1013 s-1 is generated at 22.3 eV, with 5 × 10-5 conversion efficiency that surpasses similar harmonics directly driven by the fundamental by two orders-of-magnitude. The enhancement arises from both wavelength scaling of the atomic dipole and improved spatio-temporal phase matching, confirmed by simulations. Finally, spectral isolation of a single 72-meV-wide harmonic renders this bright, 50-kHz extreme-ultraviolet source a powerful tool for ultrafast photoemission, nanoscale imaging and other applications.

  10. Direct EUV/X-Ray Modulation of the Ionosphere During the August 2017 Total Solar Eclipse

    Science.gov (United States)

    Mrak, Sebastijan; Semeter, Joshua; Drob, Douglas; Huba, J. D.

    2018-05-01

    The great American total solar eclipse of 21 August 2017 offered a fortuitous opportunity to study the response of the atmosphere and ionosphere using a myriad of ground instruments. We have used the network of U.S. Global Positioning System receivers to examine perturbations in maps of ionospheric total electron content (TEC). Coherent large-scale variations in TEC have been interpreted by others as gravity wave-induced traveling ionospheric disturbances. However, the solar disk had two active regions at that time, one near the center of the disk and one at the edge, which resulted in an irregular illumination pattern in the extreme ultraviolet (EUV)/X-ray bands. Using detailed EUV occultation maps calculated from the National Aeronautics and Space Administration Solar Dynamics Observatory Atmospheric Imaging Assembly images, we show excellent agreement between TEC perturbations and computed gradients in EUV illumination. The results strongly suggest that prominent large-scale TEC disturbances were consequences of direct EUV modulation, rather than gravity wave-induced traveling ionospheric disturbances.

  11. EB and EUV lithography using inedible cellulose-based biomass resist material

    Science.gov (United States)

    Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

    2016-03-01

    The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

  12. Use of molecular oxygen to reduce EUV-induced carbon contamination of optics

    Science.gov (United States)

    Malinowski, Michael E.; Grunow, Philip A.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.

    2001-08-01

    Carbon deposition and removal experiments on Mo/Si multilayer mirror (MLM) samples were performed using extreme ultraviolet (EUV) light on Beamline 12.0.1.2 of the Advanced Light Source, Lawrence Berkeley National Laboratory (LBNL). Carbon (C) was deposited onto Mo/Si multilayer mirror (MLM) samples when hydrocarbon vapors where intentionally introduced into the MLM test chamber in the presence of EUV at 13.44 nm (92.3eV). The carbon deposits so formed were removed by molecular oxygen + EUV. The MLM reflectivities and photoemission were measured in-situ during these carbon deposition and cleaning procedures. Auger Electron Spectroscopy (AES) sputter-through profiling of the samples was performed after experimental runs to help determine C layer thickness and the near-surface compositional-depth profiles of all samples studied. EUV powers were varied from ~0.2mW/mm2 to 3mW/mm2(at 13.44 nm) during both deposition and cleaning experiments and the oxygen pressure ranged from ~5x10-5 to 5x10-4 Torr during the cleaning experiments. C deposition rates as high as ~8nm/hr were observed, while cleaning rates as high as ~5nm/hr could be achieved when the highest oxygen pressure were used. A limited set of experiments involving intentional oxygen-only exposure of the MLM samples showed that slow oxidation of the MLM surface could occur.

  13. Nano-structuring of solid surface by extreme ultraviolet Ar8+ laser

    Czech Academy of Sciences Publication Activity Database

    Koláček, Karel; Štraus, Jaroslav; Schmidt, Jiří; Frolov, Oleksandr; Prukner, Václav; Shukurov, A.; Holý, V.; Sobota, Jaroslav; Fořt, Tomáš

    2012-01-01

    Roč. 30, č. 1 (2012), s. 57-63 ISSN 0263-0346. [International Conference on the Frontiers of Plasma Physics and Technology/5./. Singapore , 18.04.2011-22.04.2011] R&D Projects: GA MŠk LA08024; GA MŠk(CZ) LC528; GA AV ČR KAN300100702 Institutional research plan: CEZ:AV0Z20430508 Institutional support: RVO:68081731 ; RVO:61389021 Keywords : Ablation by EUV radiation * application of Ar8+ laser * nano-patterning by EUV radiation * , nano-structuring by EUV radiation Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UPT-D) Impact factor: 2.016, year: 2012

  14. EUV stimulated emission from MgO pumped by FEL pulses

    Directory of Open Access Journals (Sweden)

    Philippe Jonnard

    2017-09-01

    Full Text Available Stimulated emission is a fundamental process in nature that deserves to be investigated and understood in the extreme ultra-violet (EUV and x-ray regimes. Today, this is definitely possible through high energy density free electron laser (FEL beams. In this context, we give evidence for soft-x-ray stimulated emission from a magnesium oxide solid target pumped by EUV FEL pulses formed in the regime of travelling-wave amplified spontaneous emission in backward geometry. Our results combine two effects separately reported in previous works: emission in a privileged direction and existence of a material-dependent threshold for the stimulated emission. We develop a novel theoretical framework, based on coupled rate and transport equations taking into account the solid-density plasma state of the target. Our model accounts for both observed mechanisms that are the privileged direction for the stimulated emission of the Mg L2,3 characteristic emission and the pumping threshold.

  15. Roughness characterization of EUV multilayer coatings and ultra-smooth surfaces by light scattering

    Science.gov (United States)

    Trost, M.; Schröder, S.; Lin, C. C.; Duparré, A.; Tünnermann, A.

    2012-09-01

    Optical components for the extreme ultraviolet (EUV) face stringent requirements for surface finish, because even small amounts of surface and interface roughness can cause significant scattering losses and impair image quality. In this paper, we investigate the roughness evolution of Mo/Si multilayers by analyzing the scattering behavior at a wavelength of 13.5 nm as well as taking atomic force microscopy (AFM) measurements before and after coating. Furthermore, a new approach to measure substrate roughness is presented, which is based on light scattering measurements at 405 nm. The high robustness and sensitivity to roughness of this method are illustrated using an EUV mask blank with a highspatial frequency roughness of as low as 0.04 nm.

  16. Plasma Surface Interactions Common to Advanced Fusion Wall Materials and EUV Lithography - Lithium and Tin

    Science.gov (United States)

    Ruzic, D. N.; Alman, D. A.; Jurczyk, B. E.; Stubbers, R.; Coventry, M. D.; Neumann, M. J.; Olczak, W.; Qiu, H.

    2004-09-01

    Advanced plasma facing components (PFCs) are needed to protect walls in future high power fusion devices. In the semiconductor industry, extreme ultraviolet (EUV) sources are needed for next generation lithography. Lithium and tin are candidate materials in both areas, with liquid Li and Sn plasma material interactions being critical. The Plasma Material Interaction Group at the University of Illinois is leveraging liquid metal experimental and computational facilities to benefit both fields. The Ion surface InterAction eXperiment (IIAX) has measured liquid Li and Sn sputtering, showing an enhancement in erosion with temperature for light ion bombardment. Surface Cleaning of Optics by Plasma Exposure (SCOPE) measures erosion and damage of EUV mirror samples, and tests cleaning recipes with a helicon plasma. The Flowing LIquid surface Retention Experiment (FLIRE) measures the He and H retention in flowing liquid metals, with retention coefficients varying between 0.001 at 500 eV to 0.01 at 4000 eV.

  17. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

    Energy Technology Data Exchange (ETDEWEB)

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

    2009-08-01

    Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

  18. Extreme Ultraviolet Solar Images Televised In-Flight with a Rocket-Borne SEC Vidicon System.

    Science.gov (United States)

    Tousey, R; Limansky, I

    1972-05-01

    A TV image of the entire sun while an importance 2N solar flare was in progress was recorded in the extreme ultraviolet (XUV) radiation band 171-630 A and transmitted to ground from an Aerobee-150 rocket on 4 November 1969 using S-band telemetry. The camera tube was a Westinghouse Electric Corporation SEC vidicon, with its fiber optic faceplate coated with an XUV to visible conversion layer of p-quaterphenyl. The XUV passband was produced by three 1000-A thick aluminum filters in series together with the platinized reflecting surface of the off-axis paraboloid that imaged the sun. A number of images were recorded with integration times between 1/30 see and 2 sec. Reconstruction of pictures was enhanced by combining several to reduce the noise.

  19. Mapping the spectral phase of isolated attosecond pulses by extreme-ultraviolet emission spectrum.

    Science.gov (United States)

    Liu, Candong; Zeng, Zhinan; Li, Ruxin; Xu, Zhizhan; Nisoli, Mauro

    2015-04-20

    An all-optical method is proposed for the measurement of the spectral phase of isolated attosecond pulses. The technique is based on the generation of extreme-ultraviolet (XUV) radiation in a gas by the combination of an attosecond pulse and a strong infrared (IR) pulse with controlled electric field. By using a full quantum simulation, we demonstrate that, for particular temporal delays between the two pulses, the IR field can drive back to the parent ions the photoelectrons generated by the attosecond pulse, thus leading to the generation of XUV photons. It is found that the generated XUV spectrum is notably sensitive to the chirp of the attosecond pulse, which can then be reliably retrieved. A classical quantum-path analysis is further used to quantitatively explain the main features exhibited in the XUV emission.

  20. Correlated proton-electron hole dynamics in protonated water clusters upon extreme ultraviolet photoionization

    Directory of Open Access Journals (Sweden)

    Zheng Li

    2016-07-01

    Full Text Available The ultrafast nuclear and electronic dynamics of protonated water clusters H+(H2On after extreme ultraviolet photoionization is investigated. In particular, we focus on cluster cations with n = 3, 6, and 21. Upon ionization, two positive charges are present in the cluster related to the excess proton and the missing electron, respectively. A correlation is found between the cluster's geometrical conformation and initial electronic energy with the size of the final fragments produced. For situations in which the electron hole and proton are initially spatially close, the two entities become correlated and separate in a time-scale of 20 to 40 fs driven by strong non-adiabatic effects.

  1. Correlated proton-electron hole dynamics in protonated water clusters upon extreme ultraviolet photoionization

    Science.gov (United States)

    Li, Zheng; Vendrell, Oriol

    2016-01-01

    The ultrafast nuclear and electronic dynamics of protonated water clusters H+(H2O)n after extreme ultraviolet photoionization is investigated. In particular, we focus on cluster cations with n = 3, 6, and 21. Upon ionization, two positive charges are present in the cluster related to the excess proton and the missing electron, respectively. A correlation is found between the cluster's geometrical conformation and initial electronic energy with the size of the final fragments produced. For situations in which the electron hole and proton are initially spatially close, the two entities become correlated and separate in a time-scale of 20 to 40 fs driven by strong non-adiabatic effects. PMID:26798842

  2. Complementary ion and extreme ultra-violet spectrometer for laser-plasma diagnosis.

    Science.gov (United States)

    Ter-Avetisyan, S; Ramakrishna, B; Doria, D; Sarri, G; Zepf, M; Borghesi, M; Ehrentraut, L; Stiel, H; Steinke, S; Priebe, G; Schnürer, M; Nickles, P V; Sandner, W

    2009-10-01

    Simultaneous detection of extreme ultra-violet (XUV) and ion emission along the same line of sight provides comprehensive insight into the evolution of plasmas. This type of combined spectroscopy is applied to diagnose laser interaction with a spray target. The use of a micro-channel-plate detector assures reliable detection of both XUV and ion signals in a single laser shot. The qualitative analysis of the ion emission and XUV spectra allows to gain detailed information about the plasma conditions, and a correlation between the energetic proton emission and the XUV plasma emission can be suggested. The measured XUV emission spectrum from water spray shows efficient deceleration of laser accelerated electrons with energies up to keV in the initially cold background plasma and the collisional heating of the plasma.

  3. Complementary ion and extreme ultra-violet spectrometer for laser-plasma diagnosis

    International Nuclear Information System (INIS)

    Ter-Avetisyan, S.; Ramakrishna, B.; Doria, D.; Sarri, G.; Zepf, M.; Borghesi, M.; Ehrentraut, L.; Stiel, H.; Steinke, S.; Schnuerer, M.; Nickles, P. V.; Sandner, W.; Priebe, G.

    2009-01-01

    Simultaneous detection of extreme ultra-violet (XUV) and ion emission along the same line of sight provides comprehensive insight into the evolution of plasmas. This type of combined spectroscopy is applied to diagnose laser interaction with a spray target. The use of a micro-channel-plate detector assures reliable detection of both XUV and ion signals in a single laser shot. The qualitative analysis of the ion emission and XUV spectra allows to gain detailed information about the plasma conditions, and a correlation between the energetic proton emission and the XUV plasma emission can be suggested. The measured XUV emission spectrum from water spray shows efficient deceleration of laser accelerated electrons with energies up to keV in the initially cold background plasma and the collisional heating of the plasma.

  4. Extreme sensitivity to ultraviolet light in the fungal pathogen causing white-nose syndrome of bats.

    Science.gov (United States)

    Palmer, Jonathan M; Drees, Kevin P; Foster, Jeffrey T; Lindner, Daniel L

    2018-01-02

    Bat white-nose syndrome (WNS), caused by the fungal pathogen Pseudogymnoascus destructans, has decimated North American hibernating bats since its emergence in 2006. Here, we utilize comparative genomics to examine the evolutionary history of this pathogen in comparison to six closely related nonpathogenic species. P. destructans displays a large reduction in carbohydrate-utilizing enzymes (CAZymes) and in the predicted secretome (~50%), and an increase in lineage-specific genes. The pathogen has lost a key enzyme, UVE1, in the alternate excision repair (AER) pathway, which is known to contribute to repair of DNA lesions induced by ultraviolet (UV) light. Consistent with a nonfunctional AER pathway, P. destructans is extremely sensitive to UV light, as well as the DNA alkylating agent methyl methanesulfonate (MMS). The differential susceptibility of P. destructans to UV light in comparison to other hibernacula-inhabiting fungi represents a potential "Achilles' heel" of P. destructans that might be exploited for treatment of bats with WNS.

  5. High-resolution Fourier-transform extreme ultraviolet photoabsorption spectroscopy of 14N15N

    Science.gov (United States)

    Heays, A. N.; Dickenson, G. D.; Salumbides, E. J.; de Oliveira, N.; Joyeux, D.; Nahon, L.; Lewis, B. R.; Ubachs, W.

    2011-12-01

    The first comprehensive high-resolution photoabsorption spectrum of 14N15N has been recorded using the Fourier-transform spectrometer attached to the Desirs beamline at the Soleil synchrotron. Observations are made in the extreme ultraviolet and span 100 000-109 000 cm-1 (100-91.7 nm). The observed absorption lines have been assigned to 25 bands and reduced to a set of transition energies, f values, and linewidths. This analysis has verified the predictions of a theoretical model of N2 that simulates its photoabsorption and photodissociation cross section by solution of an isotopomer independent formulation of the coupled-channel Schrödinger equation. The mass dependence of predissociation linewidths and oscillator strengths is clearly evident and many local perturbations of transition energies, strengths, and widths within individual rotational series have been observed.

  6. Invisible marking system by extreme ultraviolet radiation: the new frontier for anti-counterfeiting tags

    International Nuclear Information System (INIS)

    Lazzaro, P. Di; Bollanti, S.; Flora, F.; Mezi, L.; Murra, D.; Torre, A.; Bonfigli, F.; Montereali, R.M.; Vincenti, M.A.

    2016-01-01

    We present a marking technology which uses extreme ultraviolet radiation to write invisible patterns on tags based on alkali fluoride thin films. The shape of the pattern is pre-determined by a mask (in the case of contact lithography) or by a suitable mirror (projection lithography). Tags marked using this method offer a much better protection against fakes than currently available anti-counterfeiting techniques. The complexity and cost of this technology can be tailored to the value of the good to be protected, leaving, on the other hand, the specific reading technique straightforward. So far, we have exploited our invisible marking to tag artworks, identity cards, electrical components, and containers of radioactive wastes. Advantages and limits of this technology are discussed in comparison with the anti-counterfeiting systems available in the market.

  7. Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths.

    Science.gov (United States)

    Mojarad, Nassir; Fan, Daniel; Gobrecht, Jens; Ekinci, Yasin

    2014-04-15

    Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

  8. The Preflight Photometric Calibration of the Extreme-Ultraviolet Imaging Telescope EIT

    Science.gov (United States)

    Dere, K. P.; Moses, J. D.; Delaboudiniere, J. -P.; Brunaud, J.; Carabetian, C.; Hochedez, J. -F.; Song, X. Y.; Catura, R. C.; Clette, F.; Defise, J. -M.

    2000-01-01

    This paper presents the preflight photometric calibration of the Extreme-ultraviolet Imaging Telescope (EIT) aboard the Solar and Heliospheric Observatory (SOHO). The EIT consists of a Ritchey-Chretien telescope with multilayer coatings applied to four quadrants of the primary and secondary mirrors, several filters and a backside-thinned CCD detector. The quadrants of the EIT optics were used to observe the Sun in 4 wavelength bands that peak near 171, 195, 284, and 304 . Before the launch of SOHO, the EIT mirror reflectivities, the filter transmissivities and the CCD quantum efficiency were measured and these values are described here. The instrumental throughput in terms of an effective area is presented for each of the various mirror quadrant and filter wheel combinations. The response to a coronal plasma as a function of temperature is also determined and the expected count rates are compared to the count rates observed in a coronal hole, the quiet Sun and an active region.

  9. A novel technique to measure intensity fluctuations in EUV images and to detect coronal sound waves nearby active regions

    Science.gov (United States)

    Stenborg, G.; Marsch, E.; Vourlidas, A.; Howard, R.; Baldwin, K.

    2011-02-01

    Context. In the past years, evidence for the existence of outward-moving (Doppler blue-shifted) plasma and slow-mode magneto-acoustic propagating waves in various magnetic field structures (loops in particular) in the solar corona has been found in ultraviolet images and spectra. Yet their origin and possible connection to and importance for the mass and energy supply to the corona and solar wind is still unclear. There has been increasing interest in this problem thanks to the high-resolution observations available from the extreme ultraviolet (EUV) imagers on the Solar TErrestrial RElationships Observatory (STEREO) and the EUV spectrometer on the Hinode mission. Aims: Flows and waves exist in the corona, and their signatures appear in EUV imaging observations but are extremely difficult to analyse quantitatively because of their weak intensity. Hence, such information is currently available mostly from spectroscopic observations that are restricted in their spatial and temporal coverage. To understand the nature and origin of these fluctuations, imaging observations are essential. Here, we present measurements of the speed of intensity fluctuations observed along apparently open field lines with the Extreme UltraViolet Imagers (EUVI) onboard the STEREO mission. One aim of our paper is to demonstrate that we can make reliable kinematic measurements from these EUV images, thereby complementing and extending the spectroscopic measurements and opening up the full corona for such an analysis. Another aim is to examine the assumptions that lead to flow versus wave interpretation for these fluctuations. Methods: We have developed a novel image-processing method by fusing well established techniques for the kinematic analysis of coronal mass ejections (CME) with standard wavelet analysis. The power of our method lies with its ability to recover weak intensity fluctuations along individual magnetic structures at any orientation , anywhere within the full solar disk , and

  10. EUV beam splitter for use in the wavelength region around 6 nm

    International Nuclear Information System (INIS)

    Takenaka, Hisataka; Ichimaru, Satoshi; Gullikson, E.M.

    2005-01-01

    Extreme ultraviolet (EUV) beam splitters for use at a wavelength of around 6 nm were fabricated. The designs were optimized for Cr/C multilayers and incident angles of 45 deg. and 80 deg. . Measurements revealed the reflectivity of a Cr/C beam splitter to be 3.3% and the transmittance to be 5.6% at a wavelength of 6.36 nm and an incident angle of 45 deg. . The reflectivity of a Cr/C beam splitter was 5.8% and the transmittance was 6.6% at a wavelength of 6.15 nm and an incident angle of 80 deg.

  11. Extreme ultra-violet emission spectroscopy of highly charged gadolinium ions with an electron beam ion trap

    International Nuclear Information System (INIS)

    Ohashi, Hayato; Nakamura, Nobuyuki; Sakaue, Hiroyuki A

    2013-01-01

    We present extreme ultra-violet emission spectra of highly charged gadolinium ions obtained with an electron beam ion trap at electron energies of 0.53–1.51 keV. The electron energy dependence of the spectra in the 5.7–11.3 nm range is compared with calculation with the flexible atomic code. (paper)

  12. Thermal deformation prediction in reticles for extreme ultraviolet lithography based on a measurement-dependent low-order model

    NARCIS (Netherlands)

    Bikcora, C.; Weiland, S.; Coene, W.M.J.

    2014-01-01

    In extreme ultraviolet lithography, imaging errors due to thermal deformation of reticles are becoming progressively intolerable as the source power increases. Despite this trend, such errors can be mitigated by adjusting the wafer and reticle stages based on a set of predicted deformation-induced

  13. A giant planet undergoing extreme-ultraviolet irradiation by its hot massive-star host.

    Science.gov (United States)

    Gaudi, B Scott; Stassun, Keivan G; Collins, Karen A; Beatty, Thomas G; Zhou, George; Latham, David W; Bieryla, Allyson; Eastman, Jason D; Siverd, Robert J; Crepp, Justin R; Gonzales, Erica J; Stevens, Daniel J; Buchhave, Lars A; Pepper, Joshua; Johnson, Marshall C; Colon, Knicole D; Jensen, Eric L N; Rodriguez, Joseph E; Bozza, Valerio; Novati, Sebastiano Calchi; D'Ago, Giuseppe; Dumont, Mary T; Ellis, Tyler; Gaillard, Clement; Jang-Condell, Hannah; Kasper, David H; Fukui, Akihiko; Gregorio, Joao; Ito, Ayaka; Kielkopf, John F; Manner, Mark; Matt, Kyle; Narita, Norio; Oberst, Thomas E; Reed, Phillip A; Scarpetta, Gaetano; Stephens, Denice C; Yeigh, Rex R; Zambelli, Roberto; Fulton, B J; Howard, Andrew W; James, David J; Penny, Matthew; Bayliss, Daniel; Curtis, Ivan A; DePoy, D L; Esquerdo, Gilbert A; Gould, Andrew; Joner, Michael D; Kuhn, Rudolf B; Labadie-Bartz, Jonathan; Lund, Michael B; Marshall, Jennifer L; McLeod, Kim K; Pogge, Richard W; Relles, Howard; Stockdale, Christopher; Tan, T G; Trueblood, Mark; Trueblood, Patricia

    2017-06-22

    The amount of ultraviolet irradiation and ablation experienced by a planet depends strongly on the temperature of its host star. Of the thousands of extrasolar planets now known, only six have been found that transit hot, A-type stars (with temperatures of 7,300-10,000 kelvin), and no planets are known to transit the even hotter B-type stars. For example, WASP-33 is an A-type star with a temperature of about 7,430 kelvin, which hosts the hottest known transiting planet, WASP-33b (ref. 1); the planet is itself as hot as a red dwarf star of type M (ref. 2). WASP-33b displays a large heat differential between its dayside and nightside, and is highly inflated-traits that have been linked to high insolation. However, even at the temperature of its dayside, its atmosphere probably resembles the molecule-dominated atmospheres of other planets and, given the level of ultraviolet irradiation it experiences, its atmosphere is unlikely to be substantially ablated over the lifetime of its star. Here we report observations of the bright star HD 195689 (also known as KELT-9), which reveal a close-in (orbital period of about 1.48 days) transiting giant planet, KELT-9b. At approximately 10,170 kelvin, the host star is at the dividing line between stars of type A and B, and we measure the dayside temperature of KELT-9b to be about 4,600 kelvin. This is as hot as stars of stellar type K4 (ref. 5). The molecules in K stars are entirely dissociated, and so the primary sources of opacity in the dayside atmosphere of KELT-9b are probably atomic metals. Furthermore, KELT-9b receives 700 times more extreme-ultraviolet radiation (that is, with wavelengths shorter than 91.2 nanometres) than WASP-33b, leading to a predicted range of mass-loss rates that could leave the planet largely stripped of its envelope during the main-sequence lifetime of the host star.

  14. Enabling laboratory EUV research with a compact exposure tool

    Science.gov (United States)

    Brose, Sascha; Danylyuk, Serhiy; Tempeler, Jenny; Kim, Hyun-su; Loosen, Peter; Juschkin, Larissa

    2016-03-01

    In this work we present the capabilities of the designed and realized extreme ultraviolet laboratory exposure tool (EUVLET) which has been developed at the RWTH-Aachen, Chair for the Technology of Optical Systems (TOS), in cooperation with the Fraunhofer Institute for Laser Technology (ILT) and Bruker ASC GmbH. Main purpose of this laboratory setup is the direct application in research facilities and companies with small batch production, where the fabrication of high resolution periodic arrays over large areas is required. The setup can also be utilized for resist characterization and evaluation of its pre- and post-exposure processing. The tool utilizes a partially coherent discharge produced plasma (DPP) source and minimizes the number of other critical components to a transmission grating, the photoresist coated wafer and the positioning system for wafer and grating and utilizes the Talbot lithography approach. To identify the limits of this approach first each component is analyzed and optimized separately and relations between these components are identified. The EUV source has been optimized to achieve the best values for spatial and temporal coherence. Phase-shifting and amplitude transmission gratings have been fabricated and exposed. Several commercially available electron beam resists and one EUV resist have been characterized by open frame exposures to determine their contrast under EUV radiation. Cold development procedure has been performed to further increase the resist contrast. By analyzing the exposure results it can be demonstrated that only a 1:1 copy of the mask structure can be fully resolved by the utilization of amplitude masks. The utilized phase-shift masks offer higher 1st order diffraction efficiency and allow a demagnification of the mask structure in the achromatic Talbot plane.

  15. Sparkling extreme-ultraviolet bright dots observed with Hi-C

    International Nuclear Information System (INIS)

    Régnier, S.; Alexander, C. E.; Walsh, R. W.; Winebarger, A. R.; Cirtain, J.; Golub, L.; Korreck, K. E.; Weber, M.; Mitchell, N.; Platt, S.; De Pontieu, B.; Title, A.; Kobayashi, K.; Kuzin, S.; DeForest, C. E.

    2014-01-01

    Observing the Sun at high time and spatial scales is a step toward understanding the finest and fundamental scales of heating events in the solar corona. The high-resolution coronal (Hi-C) instrument has provided the highest spatial and temporal resolution images of the solar corona in the EUV wavelength range to date. Hi-C observed an active region on 2012 July 11 that exhibits several interesting features in the EUV line at 193 Å. One of them is the existence of short, small brightenings 'sparkling' at the edge of the active region; we call these EUV bright dots (EBDs). Individual EBDs have a characteristic duration of 25 s with a characteristic length of 680 km. These brightenings are not fully resolved by the SDO/AIA instrument at the same wavelength; however, they can be identified with respect to the Hi-C location of the EBDs. In addition, EBDs are seen in other chromospheric/coronal channels of SDO/AIA, which suggests a temperature between 0.5 and 1.5 MK. Based on their frequency in the Hi-C time series, we define four different categories of EBDs: single peak, double peak, long duration, and bursty. Based on a potential field extrapolation from an SDO/HMI magnetogram, the EBDs appear at the footpoints of large-scale, trans-equatorial coronal loops. The Hi-C observations provide the first evidence of small-scale EUV heating events at the base of these coronal loops, which have a free magnetic energy of the order of 10 26 erg.

  16. Laser-induced extreme UV radiation sources for manufacturing next-generation integrated circuits

    International Nuclear Information System (INIS)

    Borisov, V M; Vinokhodov, A Yu; Ivanov, A S; Kiryukhin, Yu B; Mishchenko, V A; Prokof'ev, A V; Khristoforov, O B

    2009-01-01

    The development of high-power discharge sources emitting in the 13.5±0.135-nm spectral band is of current interest because they are promising for applications in industrial EUV (extreme ultraviolet) lithography for manufacturing integrated circuits according to technological precision standards of 22 nm and smaller. The parameters of EUV sources based on a laser-induced discharge in tin vapours between rotating disc electrodes are investigated. The properties of the discharge initiation by laser radiation at different wavelengths are established and the laser pulse parameters providing the maximum energy characteristics of the EUV source are determined. The EUV source developed in the study emits an average power of 276 W in the 13.5±0.135-nm spectral band on conversion to the solid angle 2π sr in the stationary regime at a pulse repetition rate of 3000 Hz. (laser applications and other topics in quantum electronics)

  17. EUVS Sounding Rocket Payload

    Science.gov (United States)

    Stern, Alan S.

    1996-01-01

    During the first half of this year (CY 1996), the EUVS project began preparations of the EUVS payload for the upcoming NASA sounding rocket flight 36.148CL, slated for launch on July 26, 1996 to observe and record a high-resolution (approx. 2 A FWHM) EUV spectrum of the planet Venus. These preparations were designed to improve the spectral resolution and sensitivity performance of the EUVS payload as well as prepare the payload for this upcoming mission. The following is a list of the EUVS project activities that have taken place since the beginning of this CY: (1) Applied a fresh, new SiC optical coating to our existing 2400 groove/mm grating to boost its reflectivity; (2) modified the Ranicon science detector to boost its detective quantum efficiency with the addition of a repeller grid; (3) constructed a new entrance slit plane to achieve 2 A FWHM spectral resolution; (4) prepared and held the Payload Initiation Conference (PIC) with the assigned NASA support team from Wallops Island for the upcoming 36.148CL flight (PIC held on March 8, 1996; see Attachment A); (5) began wavelength calibration activities of EUVS in the laboratory; (6) made arrangements for travel to WSMR to begin integration activities in preparation for the July 1996 launch; (7) paper detailing our previous EUVS Venus mission (NASA flight 36.117CL) published in Icarus (see Attachment B); and (8) continued data analysis of the previous EUVS mission 36.137CL (Spica occultation flight).

  18. The Sandia laser plasma extreme ultraviolet and soft x-ray (XUV) light source

    International Nuclear Information System (INIS)

    Tooman, T.P.

    1986-01-01

    Laser produced plasmas have been shown to be extremely bright sources of extreme ultraviolet and soft x-ray (XUV) radiation; however, certain practical difficulties have hindered the development of this source as a routinely usable laboratory device. To explore solutions to these difficulties, Sandia has constructed an XUV laser plasma source (LASPS) with the intention of developing an instrument that can be used for experiments requiring intense XUV radiation from 50-300 eV. The driving laser for this source is a KrF excimer with a wavelength of 248 nm, divergence of 200 μrad, pulse width of 23 ns at 20 Hz and typical pulse energy of 500 mJ which allows for good energy coupling to the plasma at moderate (10/sup 12/ W cm/sup 2/) power densities. This source has been pulsed approximately 2 x 10/sup 5/ times, demonstrating good tolerance to plasma debris. The source radiates from the visible to well above 1000 eV, however, to date attention has been concentrated on the 50-300 eV region. In this paper, spectral data and plasma images for both stainless steel and gold targets are presented with the gold target yielding a 200 μm plasma and reradiating 3.9% of the pump energy into 15-73 eV band, a flux of 1.22 x 10/sup 13/ photons/pulse/eV into 2π sr. Further efforts will expand these measurements to rare earth targets and to higher spectral energies. A special high throughput wide angle XUV (50-300 eV) monochromator and associated optics is being concurrently developed to collect the plasma radiation, perform energy dispersion and focus the radiation onto the experimental area

  19. Electron impact collision strengths and transition rates for extreme ultraviolet emission from Xe10+

    International Nuclear Information System (INIS)

    Shen Yunfeng; Gao Cheng; Zeng Jiaolong

    2009-01-01

    The energy levels, oscillator strengths, and electron impact collision strengths are calculated for the Xe 10+ ion using the configuration interaction scheme implemented by the Flexible Atomic Code. These data pertain to the 3917 levels belonging to the following configurations: 4s 2 4p 6 4d 8 , 4s 2 4p 6 4d 7 4f, 4s 2 4p 6 4d 7 5l (l = s, p, d, or f), 4s 2 4p 5 4d 9 , 4s 2 4p 5 4d 8 4f, 4s 2 4p 5 4d 8 5l, 4s 2 4p 6 4d 6 5s5p, 4s 2 4p 6 4d 6 5p5d. Configuration interactions among these configurations are included in the calculation. Collision strengths are obtained at 10 scattered electron energies (1-1000 eV) and are tabulated here at five representative energies of 10, 50, 100, 500, and 1000 eV. Effective collision strengths are obtained by assuming a Maxwellian electron velocity distribution at 10 temperatures ranging from 10 to 100 eV, and are tabulated at five representative temperatures of 10, 30, 50, 70 and 100 eV in this work. The whole data set should be useful for research involving extreme ultraviolet emission from Xe 10+

  20. Femtosecond tracking of carrier relaxation in germanium with extreme ultraviolet transient reflectivity

    Science.gov (United States)

    Kaplan, Christopher J.; Kraus, Peter M.; Ross, Andrew D.; Zürch, Michael; Cushing, Scott K.; Jager, Marieke F.; Chang, Hung-Tzu; Gullikson, Eric M.; Neumark, Daniel M.; Leone, Stephen R.

    2018-05-01

    Extreme ultraviolet (XUV) transient reflectivity around the germanium M4 ,5 edge (3 d core-level to valence transition) at 30 eV is advanced to obtain the transient dielectric function of crystalline germanium [100] on femtosecond to picosecond time scales following photoexcitation by broadband visible-to-infrared (VIS/NIR) pulses. By fitting the transient dielectric function, carrier-phonon induced relaxations are extracted for the excited carrier distribution. The measurements reveal a hot electron relaxation rate of 3.2 ±0.2 ps attributed to the X -L intervalley scattering and a hot hole relaxation rate of 600 ±300 fs ascribed to intravalley scattering within the heavy hole (HH) band, both in good agreement with previous work. An overall energy shift of the XUV dielectric function is assigned to a thermally induced band gap shrinkage by formation of acoustic phonons, which is observed to be on a timescale of 4-5 ps, in agreement with previously measured optical phonon lifetimes. The results reveal that the transient reflectivity signal at an angle of 66∘ with respect to the surface normal is dominated by changes to the real part of the dielectric function, due to the near critical angle of incidence of the experiment (66∘-70∘) for the range of XUV energies used. This work provides a methodology for interpreting XUV transient reflectivity near core-level transitions, and it demonstrates the power of the XUV spectral region for measuring ultrafast excitation dynamics in solids.

  1. THE EXTREME ULTRAVIOLET DEFICIT AND MAGNETICALLY ARRESTED ACCRETION IN RADIO-LOUD QUASARS

    Energy Technology Data Exchange (ETDEWEB)

    Punsly, Brian, E-mail: brian.punsly1@verizon.net [1415 Granvia Altamira, Palos Verdes Estates, CA 90274 (United States); ICRANet, Piazza della Repubblica, I-65100 10 Pescara (Italy)

    2014-12-20

    The Hubble Space Telescope composite quasar spectra presented in Telfer et al. show a significant deficit of emission in the extreme ultraviolet for the radio-loud component of the quasar population (RLQs) compared to the radio-quiet component of the quasar population. The composite quasar continuum emission between 1100 Å and ∼580 Å is generally considered to be associated with the innermost regions of the accretion flow onto the central black hole. The deficit between 1100 Å and 580 Å in RLQs has a straightforward interpretation as a missing or a suppressed innermost region of local energy dissipation in the accretion flow. It is proposed that this can be the result of islands of large-scale magnetic flux in RLQs that are located close to the central black hole that remove energy from the accretion flow as Poynting flux (sometimes called magnetically arrested accretion). These magnetic islands are natural sites for launching relativistic jets. Based on the Telfer et al. data and the numerical simulations of accretion flows in Penna et al., the magnetic islands are concentrated between the event horizon and an outer boundary of <2.8 M (in geometrized units) for rapidly rotating black holes and <5.5 M for modestly rotating black holes.

  2. USING HINODE/EXTREME-ULTRAVIOLET IMAGING SPECTROMETER TO CONFIRM A SEISMOLOGICALLY INFERRED CORONAL TEMPERATURE

    International Nuclear Information System (INIS)

    Marsh, M. S.; Walsh, R. W.

    2009-01-01

    The Extreme-Ultraviolet Imaging Spectrometer on board the HINODE satellite is used to examine the loop system described in Marsh et al. by applying spectroscopic diagnostic methods. A simple isothermal mapping algorithm is applied to determine where the assumption of isothermal plasma may be valid, and the emission measure locii technique is used to determine the temperature profile along the base of the loop system. It is found that, along the base, the loop has a uniform temperature profile with a mean temperature of 0.89 ± 0.09 MK which is in agreement with the temperature determined seismologically in Marsh et al., using observations interpreted as the slow magnetoacoustic mode. The results further strengthen the slow mode interpretation, propagation at a uniform sound speed, and the analysis method applied in Marsh et al. It is found that it is not possible to discriminate between the slow mode phase speed and the sound speed within the precision of the present observations.

  3. Classification of mini-dimmings associated with extreme ultraviolet eruptions by using graph theory

    Directory of Open Access Journals (Sweden)

    S Bazargan

    2016-09-01

    Full Text Available Coronal dimmings in both micro and macro scales, can be observed by extreme ultraviolet images, recorded from Solar Dynamics Observatory or Atmospheric Imaging Assembly (SDO/AIA. Mini-dimmings are sometimes associated with wave-like brightening, called coronal mass ejections. Here, the sun full disk images with 171 Å wavelenght, cadence of 2.5, and  0.6 arcsec cell size, were taken on 3 March 2012, then the obtained data were analyzed. Using Zernike Moment and Support Vector Machine (SVM, mini dimmings are detected. 538 active region events, 680 coronal hole events and 723 quiet sun events have been recognized using algorithm. The position, time duration and spatial expansion of these events were computed .The eruptive dimmings have a more spatial development than thermal dimmings after eruptions. This is evident in their graph characteristics length. Then, using graph theory, eruptive and thermal mini-dimmings were classified, with 13% error, for 200 dimmings. 68 dimmings were classified as thermal, and 132 as eruptive. To do this, evolution of graph characteristic length were used.

  4. Desorption/ablation of lithium fluoride induced by extreme ultraviolet laser radiation

    Directory of Open Access Journals (Sweden)

    Blejchař Tomáš

    2016-06-01

    Full Text Available The availability of reliable modeling tools and input data required for the prediction of surface removal rate from the lithium fluoride targets irradiated by the intense photon beams is essential for many practical aspects. This study is motivated by the practical implementation of soft X-ray (SXR or extreme ultraviolet (XUV lasers for the pulsed ablation and thin film deposition. Specifically, it is focused on quantitative description of XUV laser-induced desorption/ablation from lithium fluoride, which is a reference large band-gap dielectric material with ionic crystalline structure. Computational framework was proposed and employed here for the reconstruction of plume expansion dynamics induced by the irradiation of lithium fluoride targets. The morphology of experimentally observed desorption/ablation craters were reproduced using idealized representation (two-zone approximation of the laser fluence profile. The calculation of desorption/ablation rate was performed using one-dimensional thermomechanic model (XUV-ABLATOR code taking into account laser heating and surface evaporation of the lithium fluoride target occurring on a nanosecond timescale. This step was followed by the application of two-dimensional hydrodynamic solver for description of laser-produced plasma plume expansion dynamics. The calculated plume lengths determined by numerical simulations were compared with a simple adiabatic expansion (blast-wave model.

  5. Langmuir probe measurement of the bismuth plasma plume formed by an extreme-ultraviolet pulsed laser

    International Nuclear Information System (INIS)

    Pira, P; Burian, T; Kolpaková, A; Tichý, M; Kudrna, P; Daniš, S; Wild, J; Juha, L; Lančok, J; Vyšín, L; Civiš, S; Zelinger, Z; Kubát, P

    2014-01-01

    Properties of the plasma plume produced on a bismuth (Bi) target irradiated by a focused extreme-ultraviolet (XUV) capillary-discharge laser beam were investigated. Langmuir probes were used in both single- and double-probe arrangements to determine the electron temperature and the electron density, providing values of 1–3 eV and ∼10 13 –10 14  m −3 , respectively. Although the temperatures seem to be comparable with values obtained in ablation plasmas produced by conventional, long-wavelength lasers, the density is significantly lower. This finding indicates that the desorption-like phenomena are responsible for the plume formation rather than the ablation processes. A very thin Bi film was prepared on an MgO substrate by pulsed XUV laser deposition. The non-uniform, sub-monolayer character of the deposited bismuth film confirms the Langmuir probe's observation of the desorption-like erosion induced by the XUV laser on the primary Bi target. (paper)

  6. The quiet Sun extreme ultraviolet spectrum observed in normal incidence by the SOHO Coronal Diagnostic Spectrometer

    CERN Document Server

    Brooks, D H; Fludra, A; Harrison, R A; Innes, D E; Landi, E; Landini, M; Lang, J; Lanzafame, A C; Loch, S D; McWhirter, R W P; Summers, H P; Thompson, W T

    1999-01-01

    The extreme ultraviolet quiet Sun spectrum, observed at normal incidence by the Coronal Diagnostic Spectrometer on the SOHO spacecraft, is presented. The spectrum covers the wavelength ranges 308-381 AA and 513-633 AA and is based $9 on data recorded at various positions on the solar disk between October 1996 and February 1997. Datasets at twelve of these `positions' were judged to be free from active regions and data faults and selected for detailed study. A $9 constrained maximum likelihood spectral line fitting code was used to analyse the spectral features. In all over 200 spectrum lines have been measured and about 50 186584dentified. The line identification process consisted of a $9 number of steps. Firstly assignment of well known lines was made and used to obtain the primary wavelength calibration. Variations of wavelengths with position were used to assess the precision of calibration achievable. Then, an $9 analysis method first used in studies with the CHASE experiment, was applied to the new obser...

  7. Extreme-ultraviolet limb spectra of a prominence observed from SKYLAB

    International Nuclear Information System (INIS)

    Mariska, J.T.; Doschek, G.A.; Feldman, U.

    1979-01-01

    Line profiles of extreme ultraviolet emission lines observed in a solar prominence at positions above the white-light limb with the NRL slit spectrograph on Skylab are discussed. Absolute line intensities and full widths at half-maximum are presented for lines formed over the temperature range approx.1 x 10 4 to 2.2 x 10 5 K. The volume emission measures calculated using resonance line intensities are greater than quiet-Sun emission measures at the same height above the limb and indicate a somewhat different distribution of material with temperature in the prominence compared to the quiet-Sun emission measure at +8''. Electron densities in the prominence determined using the calculated emission measures and the intensities of density-sensitive intersystem lines are between the quiet-Sun electron density and half the quiet-Sun electron density. Random mass-motion velocities calculated from the measured full widths at half-maximum show a range of velocities. For T/sub e/> or approx. =4 x 10 4 K, the nonthermal velocity decreases with increasing height in the prominence. For T/sub e/ 4 K, the calculated mass motions are near zero. From the He II 1640 A line profile we derive an average temperature of 27,000 K for the region in which He II is emitted

  8. Effect of solar UV/EUV heating on the intensity and spatial distribution of Jupiter's synchrotron radiation

    Science.gov (United States)

    Kita, H.; Misawa, H.; Tsuchiya, F.; Tao, C.; Morioka, A.

    2013-10-01

    We analyzed the Very Large Array archived data observed in 2000 to determine whether solar ultraviolet (UV)/extreme ultraviolet (EUV) heating of the Jovian thermosphere causes variations in the total flux density and dawn-dusk asymmetry (the characteristic differences between the peak emissions at dawn and dusk) of Jupiter's synchrotron radiation (JSR). The total flux density varied by 10% over 6 days of observations and accorded with theoretical expectations. The average dawn-dusk peak emission ratio indicated that the dawn side emissions were brighter than those on the dusk side and this was expected to have been caused by diurnal wind induced by the solar UV/EUV. The daily variations in the dawn-dusk ratio did not correspond to the solar UV/EUV, and this finding did not support the theoretical expectation that the dawn-dusk ratio and diurnal wind velocity varies in correspondence with the solar UV/EUV. We tried to determine whether the average dawn-dusk ratio could be explained by a reasonable diurnal wind velocity. We constructed an equatorial brightness distribution model of JSR using the revised Divine-Garrett particle distribution model and used it to derive a relation between the dawn-dusk ratio and diurnal wind velocity. The estimated diurnal wind velocity reasonably corresponded to a numerical simulation of the Jovian thermosphere. We also found that realistic changes in the diurnal wind velocity could not cause the daily variations in the dawn-dusk ratio. Hence, we propose that the solar UV/EUV related variations were below the detection limit and some other processes dominated the daily variations in the dawn-dusk ratio.

  9. Discharge plasmas as EUV Sources for Future Micro Lithography

    Science.gov (United States)

    Kruecken, Thomas

    2007-08-01

    Future extreme ultraviolet (EUV) lithography will require very high radiation intensities in a narrow wavelength range around 13.5 nm, which is most efficiently emitted as line radiation by highly ionized heavy particles. Currently the most intense EUV sources are based on xenon or tin gas discharges. After having investigated the limits of a hollow cathode triggered xenon pinch discharge Philips Extreme UV favors a laser triggered tin vacuum spark discharge. Plasma and radiation properties of these highly transient discharges will be compared. Besides simple MHD-models the ADAS software package has been used to generate important atomic and spectral data of the relevant ion stages. To compute excitation and radiation properties, collisional radiative equilibria of individual ion stages are computed. For many lines opacity effects cannot be neglected. In the xenon discharges the optical depths allow for a treatment based on escape factors. Due to the rapid change of plasma parameters the abundancies of the different ionization stages must be computed dynamically. This requires effective ionization and recombination rates, which can also be supplied by ADAS. Due to very steep gradients (up to a couple orders of magnitude per mm) the plasma of tin vacuum spark discharges is very complicated. Therefore we shall describe here only some technological aspects of our tin EUV lamp: The electrode system consists of two rotating which are pulled through baths of molten tin such that a tin film remains on their surfaces. With a laser pulse some tin is ablated from one of the wheels and travels rapidly through vacuum towards the other rotating wheel. When the tin plasma reaches the other electrodes it ignites and the high current phase starts, i.e. the capacitor bank is unloaded, the plasma is pinched and EUV is radiated. Besides the good spectral properties of tin this concept has some other advantages: Erosion of electrodes is no severe problem as the tin film is

  10. Enhanced performance of an EUV light source (λ = 84 nm) using short-pulse excitation of a windowless dielectric barrier discharge in neon

    International Nuclear Information System (INIS)

    Carman, R J; Kane, D M; Ward, B K

    2010-01-01

    The electrical and optical characteristics of a dielectric barrier discharge (DBD) based neon excimer lamp generating output in the extreme ultraviolet (EUV) spectral range (λ = 84 nm) have been investigated experimentally. We report a detailed comparison of lamp performance for both pulsed and sinusoidal voltage excitation waveforms, using otherwise identical operating conditions. The results show that pulsed voltage excitation yields a ∼50% increase in the overall electrical to EUV conversion efficiency compared with sinusoidal waveforms, when operating in the pressure range 500-900 mbar. Pulsed operation allows greater control of parameters associated with the temporal evolution of the EUV pulse shapes (risetime, instantaneous peak power). The Ne DBD based source is also found to be highly monochromatic with respect to its spectral output from the second continuum band at λ ∼ 84 nm (5 nm FWHM). This continuum band dominates the spectral emission over the wavelength range 30-550 nm. Lamp performance; as measured by the overall EUV output energy, electrical to EUV conversion efficiency and spectral purity at λ ∼ 84 nm; improves with increasing gas pressure up to p = 900 mbar.

  11. Resist image quality control via acid diffusion constant and/or photodecomposable quencher concentration in the fabrication of 11 nm half-pitch line-and-space patterns using extreme-ultraviolet lithography

    Science.gov (United States)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2018-05-01

    Extreme-ultraviolet (EUV) lithography will be applied to the high-volume production of semiconductor devices with 16 nm half-pitch resolution and is expected to be extended to that of devices with 11 nm half-pitch resolution. With the reduction in the feature sizes, the control of acid diffusion becomes a significant concern. In this study, the dependence of resist image quality on T PEB D acid and photodecomposable quencher concentration was investigated by the Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. Here, T PEB and D acid are the postexposure baking (PEB) time and the acid diffusion constant, respectively. The resist image quality of 11 nm line-and-space patterns is discussed in terms of line edge roughness (LER) and stochastic defect generation. For the minimization of LER, it is necessary to design and control not only the photodecomposable quencher concentration but also T PEB D acid. In this case, D acid should be adjusted to be 0.3–1.5 nm2 s‑1 for a PEB time of 60 s with optimization of the balance among LER and stochastic pinching and bridging. Even if it is difficult to decrease D acid to the range of 0.3–1.5 nm2 s‑1, the image quality can still be controlled via only the photodecomposable quencher concentration, although LER and stochastic pinching and bridging are slightly increased. In this case, accurate control of the photodecomposable quencher concentration and the reduction in the initial standard deviation of the number of protected units are required.

  12. Automated Identification of Coronal Holes from Synoptic EUV Maps

    Science.gov (United States)

    Hamada, Amr; Asikainen, Timo; Virtanen, Ilpo; Mursula, Kalevi

    2018-04-01

    Coronal holes (CHs) are regions of open magnetic field lines in the solar corona and the source of the fast solar wind. Understanding the evolution of coronal holes is critical for solar magnetism as well as for accurate space weather forecasts. We study the extreme ultraviolet (EUV) synoptic maps at three wavelengths (195 Å/193 Å, 171 Å and 304 Å) measured by the Solar and Heliospheric Observatory/Extreme Ultraviolet Imaging Telescope (SOHO/EIT) and the Solar Dynamics Observatory/Atmospheric Imaging Assembly (SDO/AIA) instruments. The two datasets are first homogenized by scaling the SDO/AIA data to the SOHO/EIT level by means of histogram equalization. We then develop a novel automated method to identify CHs from these homogenized maps by determining the intensity threshold of CH regions separately for each synoptic map. This is done by identifying the best location and size of an image segment, which optimally contains portions of coronal holes and the surrounding quiet Sun allowing us to detect the momentary intensity threshold. Our method is thus able to adjust itself to the changing scale size of coronal holes and to temporally varying intensities. To make full use of the information in the three wavelengths we construct a composite CH distribution, which is more robust than distributions based on one wavelength. Using the composite CH dataset we discuss the temporal evolution of CHs during the Solar Cycles 23 and 24.

  13. Spectroscopic studies of xenon EUV emission in the 40-80 nm wavelength range using an absolutely calibrated monochromator

    Energy Technology Data Exchange (ETDEWEB)

    Merabet, H [Mathematic and Sciences Unit, Dhofar University, Salalah 211, Sultanate of (Oman); Bista, R [Department of Physics, University of Nevada Reno, Reno, NV 89557 (United States); Bruch, R [Department of Physics, University of Nevada Reno, Reno, NV 89557 (United States); Fuelling, S [Department of Physics, University of Nevada Reno, Reno, NV 89557 (United States)

    2007-03-01

    We have measured and identified numerous Extreme UltraViolet (EUV) radiative line structures arising from xenon (Xe) ions in charge state q = 1 to 10 in the wavelength range 40-80 nm. To obtain reasonable intensities of different charged Xe ions, we have used a compact microwave plasma source which was designed and developed at the Lawrence Berkeley National Laboratory (LBNL). The EUV emission of the ECR plasma has been measured by a 1.5 m grazing incidence monochromator that was absolutely calibrated in the 10-80 nm wavelength range using well known and calibrated EUV light at the Advanced Light Source (ALS), LBNL. This calibration has enabled us to determine absolute intensities of previously measured EUV radiative lines in the wavelengths regions investigated for different ionization stages of Xe. In addition, emission spectra of xenon ions for corresponding measured lines have been calculated. The calculations have been carried out within the relativistic Hartree-Fock (HF) approximation. Results of calculations are found to be in good agreement with current and available experimental and theoretical data.

  14. Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

    Science.gov (United States)

    Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

    2016-03-01

    Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and

  15. Well-defined EUV wave associated with a CME-driven shock

    Science.gov (United States)

    Cunha-Silva, R. D.; Selhorst, C. L.; Fernandes, F. C. R.; Oliveira e Silva, A. J.

    2018-05-01

    Aims: We report on a well-defined EUV wave observed by the Extreme Ultraviolet Imager (EUVI) on board the Solar Terrestrial Relations Observatory (STEREO) and the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). The event was accompanied by a shock wave driven by a halo CME observed by the Large Angle and Spectrometric Coronagraph (LASCO-C2/C3) on board the Solar and Heliospheric Observatory (SOHO), as evidenced by the occurrence of type II bursts in the metric and dekameter-hectometric wavelength ranges. We investigated the kinematics of the EUV wave front and the radio source with the purpose of verifying the association between the EUV wave and the shock wave. Methods: The EUV wave fronts were determined from the SDO/AIA images by means of two appropriate directions (slices). The heights (radial propagation) of the EUV wave observed by STEREO/EUVI and of the radio source associated with the shock wave were compared considering the whole bandwidth of the harmonic lane of the radio emission, whereas the speed of the shock was estimated using the lowest frequencies of the harmonic lane associated with the undisturbed corona, using an appropriate multiple of the Newkirk (1961, ApJ, 133, 983) density model and taking into account the H/F frequency ratio fH/fF = 2. The speed of the radio source associated with the interplanetary shock was determined using the Mann et al. (1999, A&A, 348, 614) density model. Results: The EUV wave fronts determined from the SDO/AIA images revealed the coexistence of two types of EUV waves, a fast one with a speed of 560 km s-1, and a slower one with a speed of 250 km s-1, which corresponds approximately to one-third of the average speed of the radio source ( 680 km s-1). The radio signature of the interplanetary shock revealed an almost constant speed of 930 km s-1, consistent with the linear speed of the halo CME (950 km s-1) and with the values found for the accelerating coronal shock ( 535-823 km s-1

  16. Spin-resolved photoelectron spectroscopy using femtosecond extreme ultraviolet light pulses from high-order harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Plötzing, M.; Adam, R., E-mail: r.adam@fz-juelich.de; Weier, C.; Plucinski, L.; Schneider, C. M. [Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), 52425 Jülich (Germany); Eich, S.; Emmerich, S.; Rollinger, M.; Aeschlimann, M. [University of Kaiserslautern and Research Center OPTIMAS, 67663 Kaiserslautern (Germany); Mathias, S. [Georg-August-Universität Göttingen, I. Physikalisches Institut, 37077 Göttingen (Germany)

    2016-04-15

    The fundamental mechanism responsible for optically induced magnetization dynamics in ferromagnetic thin films has been under intense debate since almost two decades. Currently, numerous competing theoretical models are in strong need for a decisive experimental confirmation such as monitoring the triggered changes in the spin-dependent band structure on ultrashort time scales. Our approach explores the possibility of observing femtosecond band structure dynamics by giving access to extended parts of the Brillouin zone in a simultaneously time-, energy- and spin-resolved photoemission experiment. For this purpose, our setup uses a state-of-the-art, highly efficient spin detector and ultrashort, extreme ultraviolet light pulses created by laser-based high-order harmonic generation. In this paper, we present the setup and first spin-resolved spectra obtained with our experiment within an acquisition time short enough to allow pump-probe studies. Further, we characterize the influence of the excitation with femtosecond extreme ultraviolet pulses by comparing the results with data acquired using a continuous wave light source with similar photon energy. In addition, changes in the spectra induced by vacuum space-charge effects due to both the extreme ultraviolet probe- and near-infrared pump-pulses are studied by analyzing the resulting spectral distortions. The combination of energy resolution and electron count rate achieved in our setup confirms its suitability for spin-resolved studies of the band structure on ultrashort time scales.

  17. Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light

    Science.gov (United States)

    Menoni, Carmen S [Fort Collins, CO; Rocca, Jorge J [Fort Collins, CO; Vaschenko, Georgiy [San Diego, CA; Bloom, Scott [Encinitas, CA; Anderson, Erik H [El Cerrito, CA; Chao, Weilun [El Cerrito, CA; Hemberg, Oscar [Stockholm, SE

    2011-04-26

    Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.

  18. Extreme ultraviolet fluorescence spectroscopy of pure and core-shell rare gas clusters at FLASH

    Energy Technology Data Exchange (ETDEWEB)

    Schroedter, Lasse

    2013-08-15

    The interaction of rare gas clusters with short-wavelength radiation of free-electron lasers (FELs) has been studied extensively over the last decade by means of electron and ion time-of-flight spectroscopy. This thesis describes the design and construction of a fluorescence spectrometer for the extreme ultraviolet (XUV) spectral range and discusses the cluster experiments performed at FLASH, the Free-electron LAser in Hamburg. Fluorescence of xenon and of argon clusters was studied, both in dependence on the FEL pulse intensity and on the cluster size. The FEL wavelength was set to the giant 4d-resonance of xenon at 13.5 nm and the FEL pulse intensity reached peak values of 2.7.10{sup 15} W/cm{sup 2}. For xenon clusters, charge states of at least 11+ were identified. For argon, charge states up to 7+ were detected. The cluster-size dependent study revealed a decrease of the fluorescence yield per atom with increasing cluster size. This decrease is explained with the help of a geometric model. It assumes that virtually the entire fluorescence yield stems from shells of ions on the cluster surface, whereas ions in the cluster core predominantly recombine non-radiatively with electrons. However, the detailed analysis of fluorescence spectra from clusters consisting of a core of Xe atoms and a surrounding shell of argon atoms shows that, in fact, a small fraction of the fluorescence signal comes from Xe ions in the cluster core. Interestingly, these ions are as highly charged as the ions in the shells of a pure Xe cluster. This result goes beyond the current understanding of charge and energy transfer processes in these systems and points toward the observation of ultrafast charging dynamics in a time window where mass spectrometry is inherently blind. (orig.)

  19. Extreme ultraviolet fluorescence spectroscopy of pure and core-shell rare gas clusters at FLASH

    International Nuclear Information System (INIS)

    Schroedter, Lasse

    2013-08-01

    The interaction of rare gas clusters with short-wavelength radiation of free-electron lasers (FELs) has been studied extensively over the last decade by means of electron and ion time-of-flight spectroscopy. This thesis describes the design and construction of a fluorescence spectrometer for the extreme ultraviolet (XUV) spectral range and discusses the cluster experiments performed at FLASH, the Free-electron LAser in Hamburg. Fluorescence of xenon and of argon clusters was studied, both in dependence on the FEL pulse intensity and on the cluster size. The FEL wavelength was set to the giant 4d-resonance of xenon at 13.5 nm and the FEL pulse intensity reached peak values of 2.7.10 15 W/cm 2 . For xenon clusters, charge states of at least 11+ were identified. For argon, charge states up to 7+ were detected. The cluster-size dependent study revealed a decrease of the fluorescence yield per atom with increasing cluster size. This decrease is explained with the help of a geometric model. It assumes that virtually the entire fluorescence yield stems from shells of ions on the cluster surface, whereas ions in the cluster core predominantly recombine non-radiatively with electrons. However, the detailed analysis of fluorescence spectra from clusters consisting of a core of Xe atoms and a surrounding shell of argon atoms shows that, in fact, a small fraction of the fluorescence signal comes from Xe ions in the cluster core. Interestingly, these ions are as highly charged as the ions in the shells of a pure Xe cluster. This result goes beyond the current understanding of charge and energy transfer processes in these systems and points toward the observation of ultrafast charging dynamics in a time window where mass spectrometry is inherently blind. (orig.)

  20. Ionization and dissociation dynamics of vinyl bromide probed by femtosecond extreme ultraviolet transient absorption spectroscopy

    International Nuclear Information System (INIS)

    Lin, Ming-Fu; Neumark, Daniel M.; Gessner, Oliver; Leone, Stephen R.

    2014-01-01

    Strong-field induced ionization and dissociation dynamics of vinyl bromide, CH 2 =CHBr, are probed using femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy. Strong-field ionization is initiated with an intense femtosecond, near infrared (NIR, 775 nm) laser field. Femtosecond XUV pulses covering the photon energy range of 50-72 eV probe the subsequent dynamics by measuring the time-dependent spectroscopic features associated with transitions of the Br (3d) inner-shell electrons to vacancies in molecular and atomic valence orbitals. Spectral signatures are observed for the depletion of neutral C 2 H 3 Br, the formation of C 2 H 3 Br + ions in their ground (X ~ ) and first excited (A ~ ) states, the production of C 2 H 3 Br ++ ions, and the appearance of neutral Br ( 2 P 3/2 ) atoms by dissociative ionization. The formation of free Br ( 2 P 3/2 ) atoms occurs on a timescale of 330 ± 150 fs. The ionic A ~ state exhibits a time-dependent XUV absorption energy shift of ∼0.4 eV within the time window of the atomic Br formation. The yield of Br atoms correlates with the yield of parent ions in the A ~ state as a function of NIR peak intensity. The observations suggest that a fraction of vibrationally excited C 2 H 3 Br + (A ~ ) ions undergoes intramolecular vibrational energy redistribution followed by the C–Br bond dissociation. The C 2 H 3 Br + (X ~ ) products and the majority of the C 2 H 3 Br ++ ions are relatively stable due to a deeper potential well and a high dissociation barrier, respectively. The results offer powerful new insights about orbital-specific electronic processes in high field ionization, coupled vibrational relaxation and dissociation dynamics, and the correlation of valence hole-state location and dissociation in polyatomic molecules, all probed simultaneously by ultrafast table-top XUV spectroscopy

  1. Determination of line profiles on nano-structured surfaces using EUV and x-ray scattering

    Science.gov (United States)

    Soltwisch, Victor; Wernecke, Jan; Haase, Anton; Probst, Jürgen; Schoengen, Max; Krumrey, Michael; Scholze, Frank; Pomplun, Jan; Burger, Sven

    2014-09-01

    Non-imaging techniques like X-ray scattering are supposed to play an important role in the further development of CD metrology for the semiconductor industry. Grazing Incidence Small Angle X-ray Scattering (GISAXS) provides directly assessable information on structure roughness and long-range periodic perturbations. The disadvantage of the method is the large footprint of the X-ray beam on the sample due to the extremely shallow angle of incidence. This can be overcome by using wavelengths in the extreme ultraviolet (EUV) spectral range, EUV small angle scattering (EUVSAS), which allows for much steeper angles of incidence but preserves the range of momentum transfer that can be observed. Generally, the potentially higher momentum transfer at shorter wavelengths is counterbalanced by decreasing diffraction efficiency. This results in a practical limit of about 10 nm pitch for which it is possible to observe at least the +/- 1st diffraction orders with reasonable efficiency. At the Physikalisch-Technische Bundesanstalt (PTB), the available photon energy range extends from 50 eV up to 10 keV at two adjacent beamlines. PTB commissioned a new versatile Ellipso-Scatterometer which is capable of measuring 6" square substrates in a clean, hydrocarbon-free environment with full flexibility regarding the direction of the incident light polarization. The reconstruction of line profiles using a geometrical model with six free parameters, based on a finite element method (FEM) Maxwell solver and a particle swarm based least-squares optimization yielded consistent results for EUV-SAS and GISAXS. In this contribution we present scatterometry data for line gratings and consistent reconstruction results of the line geometry for EUV-SAS and GISAXS.

  2. Atomic structure calculations and identification of EUV and SXR spectral lines in Sr XXX

    International Nuclear Information System (INIS)

    Goyal, Arun; Khatri, Indu; Aggarwal, Sunny; Singh, A.K.; Mohan, Man

    2015-01-01

    We report an extensive theoretical study of atomic data for Sr XXX in a wide range with L-shell electron excitations to the M-shell. We have calculated energy levels, wave-function compositions and lifetimes for lowest 113 fine structure levels and wavelengths of an extreme Ultraviolet (EUV) and soft X-ray (SXR) transitions. We have employed multi-configuration Dirac Fock method (MCDF) approach within the framework of Dirac–Coulomb Hamiltonian including quantum electrodynamics (QED) and Breit corrections. We have also presented the radiative data for electric and magnetic dipole (E1, M1) and quadrupole (E2, M2) transitions from the ground state. We have made comparisons with available energy levels compiled by NIST and achieve good agreement. But due to inadequate data in the literature, analogous relativistic distorted wave calculations have also been performed using flexible atomic code (FAC) to assess the reliability and accuracy of our results. Additionally, we have provided new atomic data for Sr XXX which is not published elsewhere in the literature and we believe that our results may be beneficial in fusion plasma research and astrophysical investigations and applications. - Highlights: • 113 Lowest levels for Sr XXX are calculated. • Extreme Ultraviolet (EUV) and soft-X ray (SXR) spectral lines are identified. • Wavelengths of EUV and SXR spectral lines are reported. • E1, E2, M1 and M2 transition rates, oscillator strengths and lines strengths for lowest 113 levels are presented. • Lifetimes for lowest 113 fine structure levels are provided

  3. Development of a EUV Test Facility at the Marshall Space Flight Center

    Science.gov (United States)

    West, Edward; Pavelitz, Steve; Kobayashi, Ken; Robinson, Brian; Cirtain, Johnathan; Gaskin, Jessica; Winebarger, Amy

    2011-01-01

    This paper will describe a new EUV test facility that is being developed at the Marshall Space Flight Center (MSFC) to test EUV telescopes. Two flight programs, HiC - high resolution coronal imager (sounding rocket) and SUVI - Solar Ultraviolet Imager (GOES-R), set the requirements for this new facility. This paper will discuss those requirements, the EUV source characteristics, the wavelength resolution that is expected and the vacuum chambers (Stray Light Facility, Xray Calibration Facility and the EUV test chamber) where this facility will be used.

  4. Development of the RAIDS extreme ultraviolet wedge and strip detector. [Remote Atmospheric and Ionospheric Detector System

    Science.gov (United States)

    Kayser, D. C.; Chater, W. T.; Christensen, A. B.; Howey, C. K.; Pranke, J. B.

    1988-01-01

    In the next few years the Remote Atmospheric and Ionospheric Detector System (RAIDS) package will be flown on a Tiros spacecraft. The EUV spectrometer experiment contains a position-sensitive detector based on wedge and strip anode technology. A detector design has been implemented in brazed alumina and kovar to provide a rugged bakeable housing and anode. A stack of three 80:1 microchannel plates is operated at 3500-4100 V. to achieve a gain of about 10 to the 7th. The top MCP is to be coated with MgF for increased quantum efficiency in the range of 50-115 nm. A summary of fabrication techniques and detector performance characteristics is presented.

  5. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-01

    A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  6. Responsivity calibration of the extreme ultraviolet spectrometer in the range of 175-435 Å

    Directory of Open Access Journals (Sweden)

    B. Tu

    2017-04-01

    Full Text Available We reported the relative responsivity calibration of the grazing-incidence flat-field EUV spectrometer between 175 and 435 Å by means of two methods. The first method is implemented by measuring the diffraction efficiency of the grating with synchrotron radiation light source. Considering the transmission efficiency and quantum efficiency of the other optical components in the spectrometer, the total responsivity was then obtained. The second one was carried out by measuring line emissions from C3+, N4+ and O3+ ions at Shanghai high temperature super conductor electron beam ion trap (SH-HtscEBIT. The EUV spectra were also simulated theoretically via a collisional radiative model. In the calculation, the second-order relativistic many-body perturbation theory approach based on the flexible atomic code was used to calculate the energy levels and transition rates; the close-coupling R-matrix approach and relativistic distorted wave method were utilized to calculate the collision strength of electron impact excitation. In comparison with the spectroscopic measurements at EBIT device, the differences between the measured and simulated relative line intensities were obtained. The responsivity calibration for the spectrometer was then achieved by a 3rd degree polynomial function fitting. Our measurement shows that the responsivity between 175 and 435 Å varies by factor of ∼ 46. The two results of calibration demonstrated a consistency within an average deviation of 24%. In addition, an evaluation of our calculations on C iv, N v and O iv line emissions in this wavelength region was given.

  7. Formation of a fine-dispersed liquid-metal target under the action of femto- and picosecond laser pulses for a laser-plasma radiation source in the extreme ultraviolet range

    Energy Technology Data Exchange (ETDEWEB)

    Vinokhodov, A Yu; Krivokorytov, M S [EUV Labs, Ltd., Troitsk, Moscow (Russian Federation); Koshelev, K N; Krivtsun, V M; Sidelnikov, Yu V; Medvedev, V V; Kompanets, V O; Melnikov, A A; Chekalin, S V [Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow (Russian Federation)

    2016-01-31

    We report the results of studying the dynamics of deformation and fragmentation of liquid-metal droplets under the action of ultrashort laser pulses. The experiments have been performed to optimise the shape of the droplet target used in extreme ultraviolet (EUV) radiation sources based on the laser-produced plasma using the pre-pulse technology. The pre-pulse is generated by a system incorporating a master Ti : sapphire oscillator and a regenerative amplifier, allowing one to vary the pulse duration from 50 fs to 50 ps. The power density of laser radiation at the droplet target, averaged over the pulse duration and spatial coordinates, has reached 3 × 10{sup 15} W cm{sup -2}. The production of liquid-metal droplets has been implemented by means of a droplet generator based on a nozzle with a ring piezoceramic actuator. The droplet material is the eutectic indium – tin alloy. The droplet generator could operate in the droplet and jet regime with a maximal rate of stable operation 5 and 150 kHz, respectively. The spatial stability of droplet position σ = 1% – 2% of its diameter is achieved. The size of the droplets varied within 30 – 70 μm, their velocity was 2 – 8 m s{sup -1} depending on the operation regime. (interaction of laser radiation with matter. laser plasma)

  8. Spatio-temporal coherence of free-electron laser radiation in the extreme ultraviolet determined by a Michelson interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Hilbert, V.; Rödel, C.; Zastrau, U., E-mail: ulf.zastrau@uni-jena.de [Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena (Germany); Brenner, G.; Düsterer, S.; Dziarzhytski, S.; Harmand, M.; Przystawik, A.; Redlin, H.; Toleikis, S. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Döppner, T.; Ma, T. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States); Fletcher, L. [Department of Physics, University of California, Berkeley, California 94720 (United States); Förster, E. [Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena (Germany); Helmholtz-Institut Jena, Fröbelstieg 3, 07743 Jena (Germany); Glenzer, S. H.; Lee, H. J. [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Hartley, N. J. [Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Kazak, L.; Komar, D.; Skruszewicz, S. [Institut für Physik, Universität Rostock, 18051 Rostock (Germany); and others

    2014-09-08

    A key feature of extreme ultraviolet (XUV) radiation from free-electron lasers (FELs) is its spatial and temporal coherence. We measured the spatio-temporal coherence properties of monochromatized FEL pulses at 13.5 nm using a Michelson interferometer. A temporal coherence time of (59±8) fs has been determined, which is in good agreement with the spectral bandwidth given by the monochromator. Moreover, the spatial coherence in vertical direction amounts to about 15% of the beam diameter and about 12% in horizontal direction. The feasibility of measuring spatio-temporal coherence properties of XUV FEL radiation using interferometric techniques advances machine operation and experimental studies significantly.

  9. Counter-streaming flows in a giant quiet-Sun filament observed in the extreme ultraviolet

    Science.gov (United States)

    Diercke, A.; Kuckein, C.; Verma, M.; Denker, C.

    2018-03-01

    Aim. The giant solar filament was visible on the solar surface from 2011 November 8-23. Multiwavelength data from the Solar Dynamics Observatory (SDO) were used to examine counter-streaming flows within the spine of the filament. Methods: We use data from two SDO instruments, the Atmospheric Imaging Assembly (AIA) and the Helioseismic and Magnetic Imager (HMI), covering the whole filament, which stretched over more than half a solar diameter. Hα images from the Kanzelhöhe Solar Observatory (KSO) provide context information of where the spine of the filament is defined and the barbs are located. We apply local correlation tracking (LCT) to a two-hour time series on 2011 November 16 of the AIA images to derive horizontal flow velocities of the filament. To enhance the contrast of the AIA images, noise adaptive fuzzy equalization (NAFE) is employed, which allows us to identify and quantify counter-streaming flows in the filament. We observe the same cool filament plasma in absorption in both Hα and EUV images. Hence, the counter-streaming flows are directly related to this filament material in the spine. In addition, we use directional flow maps to highlight the counter-streaming flows. Results: We detect counter-streaming flows in the filament, which are visible in the time-lapse movies in all four examined AIA wavelength bands (λ171 Å, λ193 Å, λ304 Å, and λ211 Å). In the time-lapse movies we see that these persistent flows lasted for at least two hours, although they became less prominent towards the end of the time series. Furthermore, by applying LCT to the images we clearly determine counter-streaming flows in time series of λ171 Å and λ193 Å images. In the λ304 Å wavelength band, we only see minor indications for counter-streaming flows with LCT, while in the λ211 Å wavelength band the counter-streaming flows are not detectable with this method. The diverse morphology of the filament in Hα and EUV images is caused by different absorption

  10. Evaluation of EUV resist performance using interference lithography

    Science.gov (United States)

    Buitrago, E.; Yildirim, O.; Verspaget, C.; Tsugama, N.; Hoefnagels, R.; Rispens, G.; Ekinci, Y.

    2015-03-01

    Extreme ultraviolet lithography (EUVL) stands as the most promising solution for the fabrication of future technology nodes in the semiconductor industry. Nonetheless, the successful introduction of EUVL into the extremely competitive and stringent high-volume manufacturing (HVM) phase remains uncertain partly because of the still limiting performance of EUV resists below 16 nm half-pitch (HP) resolution. Particularly, there exists a trade-off relationship between resolution (half-pitch), sensitivity (dose) and line-edge roughness (LER) that can be achieved with existing materials. This trade-off ultimately hampers their performance and extendibility towards future technology nodes. Here we present a comparative study of highly promising chemically amplified resists (CARs) that have been evaluated using the EUV interference lithography (EUV-IL) tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). In this study we have focused on the performance qualification of different resists mainly for 18 nm and 16 nm half-pitch line/space resolution (L/S = 1:1). Among the most promising candidates tested, there are a few choices that allow for 16 nm HP resolution to be achieved with high exposure latitude (up to ~ 33%), low LER (down to 3.3 nm or ~ 20% of critical dimension CD) and low dose-to-size (or best-energy, BE) < 41 mJ/cm2 values. Patterning was even demonstrated down to 12 nm HP with one of CARs (R1UL1) evaluated for their extendibility beyond the 16 nm HP resolution. 11 nm HP patterning with some pattern collapse and well resolved patterns down 12 nm were also demonstrated with another CAR (R15UL1) formulated for 16 nm HP resolution and below. With such resist it was possible even to obtain a small process window for 14 nm HP processing with an EL ~ 8% (BE ~ 37 mJ/cm2, LER ~ 4.5 nm). Though encouraging, fulfilling all of the requirements necessary for high volume production, such as high resolution, low LER, high photon

  11. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Laser-induced extreme UV radiation sources for manufacturing next-generation integrated circuits

    Science.gov (United States)

    Borisov, V. M.; Vinokhodov, A. Yu; Ivanov, A. S.; Kiryukhin, Yu B.; Mishchenko, V. A.; Prokof'ev, A. V.; Khristoforov, O. B.

    2009-10-01

    The development of high-power discharge sources emitting in the 13.5±0.135-nm spectral band is of current interest because they are promising for applications in industrial EUV (extreme ultraviolet) lithography for manufacturing integrated circuits according to technological precision standards of 22 nm and smaller. The parameters of EUV sources based on a laser-induced discharge in tin vapours between rotating disc electrodes are investigated. The properties of the discharge initiation by laser radiation at different wavelengths are established and the laser pulse parameters providing the maximum energy characteristics of the EUV source are determined. The EUV source developed in the study emits an average power of 276 W in the 13.5±0.135-nm spectral band on conversion to the solid angle 2π sr in the stationary regime at a pulse repetition rate of 3000 Hz.

  12. OBSERVATIONS OF FIVE-MINUTE SOLAR OSCILLATIONS IN THE CORONA USING THE EXTREME ULTRAVIOLET SPECTROPHOTOMETER (ESP) ON BOARD THE SOLAR DYNAMICS OBSERVATORY EXTREME ULTRAVIOLET VARIABILITY EXPERIMENT (SDO/EVE)

    International Nuclear Information System (INIS)

    Didkovsky, L.; Judge, D.; Wieman, S.; Kosovichev, A. G.; Woods, T.

    2011-01-01

    We report on the detection of oscillations in the corona in the frequency range corresponding to five-minute acoustic modes of the Sun. The oscillations have been observed using soft X-ray measurements from the Extreme Ultraviolet Spectrophotometer (ESP) of the Extreme Ultraviolet Variability Experiment on board the Solar Dynamics Observatory. The ESP zeroth-order channel observes the Sun as a star without spatial resolution in the wavelength range of 0.1-7.0 nm (the energy range is 0.18-12.4 keV). The amplitude spectrum of the oscillations calculated from six-day time series shows a significant increase in the frequency range of 2-4 mHz. We interpret this increase as a response of the corona to solar acoustic (p) modes and attempt to identify p-mode frequencies among the strongest peaks. Due to strong variability of the amplitudes and frequencies of the five-minute oscillations in the corona, we study how the spectrum from two adjacent six-day time series combined together affects the number of peaks associated with the p-mode frequencies and their amplitudes. This study shows that five-minute oscillations of the Sun can be observed in the corona in variations of the soft X-ray emission. Further investigations of these oscillations may improve our understanding of the interaction of the oscillation modes with the solar atmosphere, and the interior-corona coupling, in general.

  13. Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

    KAUST Repository

    Jiang, Jing; Zhang, Ben; Yu, Mufei; Li, Li; Neisser, Mark; Sung Chun, Jun; Giannelis, Emmanuel P.; Ober, Christopher K.

    2015-01-01

    © 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.

  14. A study of the terrestrial thermosphere by remote sensing of OI dayglow in the far and extreme ultraviolet

    International Nuclear Information System (INIS)

    Cotton, D.M.

    1991-01-01

    The upper region of the Earth's atmosphere, the thermosphere, is a key part of the coupled solar-terrestrial system. An important method of obtaining information in the this region is through analysis of radiation excited through the interactions of the thermosphere with solar ionizing, extreme and far ultraviolet radiation. This dissertation presents one such study by the remote sensing of OI in the far and extreme ultraviolet dayglow. The research program included the development construction, and flight of a sounding rocket spectrometer to test this current understanding of the excitation and transport mechanisms of the OI 1356, 1304, 1027, and 989 angstrom emissions. This data set was analyzed using current electron and radiative transport models with the purpose of checking the viability of OI remote sensing; that is, whether existing models and input parameters are adequate to predict these detailed measurements. From discrepancies between modeled and measured emissions, inferences about these input parameters were made. Among other things, the data supports a 40% optically thick cascade contribution to the 1304 angstrom emission. From upper lying states corresponding to 1040, 1027 and 989 angstrom about half of this cascade has been accounted for in this study. There is also evidence that the Lyman β airglow from the geo-corona contributes a significant proportion (30-50%) to the OI 1027 angstrom feature. Furthermore, the photoelectron contribution to the 1027 angstrom feature appears to be underestimated in the current models by a factor of 20

  15. Measurements of EUV coronal holes and open magnetic flux

    International Nuclear Information System (INIS)

    Lowder, C.; Qiu, J.; Leamon, R.; Liu, Y.

    2014-01-01

    Coronal holes are regions on the Sun's surface that map the footprints of open magnetic field lines. We have developed an automated routine to detect and track boundaries of long-lived coronal holes using full-disk extreme-ultraviolet (EUV) images obtained by SOHO/EIT, SDO/AIA, and STEREO/EUVI. We measure coronal hole areas and magnetic flux in these holes, and compare the measurements with calculations by the potential field source surface (PFSS) model. It is shown that, from 1996 through 2010, the total area of coronal holes measured with EIT images varies between 5% and 17% of the total solar surface area, and the total unsigned open flux varies between (2-5)× 10 22 Mx. The solar cycle dependence of these measurements is similar to the PFSS results, but the model yields larger hole areas and greater open flux than observed by EIT. The AIA/EUVI measurements from 2010-2013 show coronal hole area coverage of 5%-10% of the total surface area, with significant contribution from low latitudes, which is under-represented by EIT. AIA/EUVI have measured much enhanced open magnetic flux in the range of (2-4)× 10 22 Mx, which is about twice the flux measured by EIT, and matches with the PFSS calculated open flux, with discrepancies in the location and strength of coronal holes. A detailed comparison between the three measurements (by EIT, AIA-EUVI, and PFSS) indicates that coronal holes in low latitudes contribute significantly to the total open magnetic flux. These low-latitude coronal holes are not well measured with either the He I 10830 line in previous studies, or EIT EUV images; neither are they well captured by the static PFSS model. The enhanced observations from AIA/EUVI allow a more accurate measure of these low-latitude coronal holes and their contribution to open magnetic flux.

  16. Measurements of EUV coronal holes and open magnetic flux

    Energy Technology Data Exchange (ETDEWEB)

    Lowder, C.; Qiu, J.; Leamon, R. [Department of Physics, Montana State University, Bozeman, MT 59717 (United States); Liu, Y., E-mail: clowder@solar.physics.montana.edu [W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, CA 94305 (United States)

    2014-03-10

    Coronal holes are regions on the Sun's surface that map the footprints of open magnetic field lines. We have developed an automated routine to detect and track boundaries of long-lived coronal holes using full-disk extreme-ultraviolet (EUV) images obtained by SOHO/EIT, SDO/AIA, and STEREO/EUVI. We measure coronal hole areas and magnetic flux in these holes, and compare the measurements with calculations by the potential field source surface (PFSS) model. It is shown that, from 1996 through 2010, the total area of coronal holes measured with EIT images varies between 5% and 17% of the total solar surface area, and the total unsigned open flux varies between (2-5)× 10{sup 22} Mx. The solar cycle dependence of these measurements is similar to the PFSS results, but the model yields larger hole areas and greater open flux than observed by EIT. The AIA/EUVI measurements from 2010-2013 show coronal hole area coverage of 5%-10% of the total surface area, with significant contribution from low latitudes, which is under-represented by EIT. AIA/EUVI have measured much enhanced open magnetic flux in the range of (2-4)× 10{sup 22} Mx, which is about twice the flux measured by EIT, and matches with the PFSS calculated open flux, with discrepancies in the location and strength of coronal holes. A detailed comparison between the three measurements (by EIT, AIA-EUVI, and PFSS) indicates that coronal holes in low latitudes contribute significantly to the total open magnetic flux. These low-latitude coronal holes are not well measured with either the He I 10830 line in previous studies, or EIT EUV images; neither are they well captured by the static PFSS model. The enhanced observations from AIA/EUVI allow a more accurate measure of these low-latitude coronal holes and their contribution to open magnetic flux.

  17. The first detection of ionized helium in the local ISM - EUVE and IUE spectroscopy of the hot DA white dwarf GD 246

    Science.gov (United States)

    Vennes, Stephane; Dupuis, Jean; Rumph, Todd; Drake, Jeremy; Bowyer, Stuart; Chayer, Pierre; Fontaine, Gilles

    1993-01-01

    We report observations of the extreme ultraviolet spectrum of the hot degenerate star GD 246 obtained with the EUVE. Our initial attempt at modeling the photospheric emission from the white dwarf reveals a relatively uncontaminated pure H spectrum in the range above 200 A, allowing a study of interstellar continuum absorption features in the line of sight of GD 246. Modeling of the He I autoionization transition discussed by Rumph et al. (1993), and the EUV continuum using the white dwarf as a source of background radiation provides measurements of both neutral and, for the first time, singly ionized He column densities in the local ISM (LISM). We estimate the He ionization fraction He II/(He I + He II) at roughly 25 percent with a total He column of 1.40-1.65 x 10 exp 18/sq cm. We have measured and compared H I column densities from the saturated Ly-alpha ISM absorption in IUE high-dispersion spectroscopy and from EUV continuum absorption: the two measurements are in good agreement with a total H column of 1.2-1.6 x 10 exp 19/sq cm. We discuss some implications for the nature of the LISM, particularly in the context of current models of the EUV radiation field.

  18. Heights integrated model as instrument for simulation of hydrodynamic, radiation transport, and heat conduction phenomena of laser-produced plasma in EUV applications.

    Energy Technology Data Exchange (ETDEWEB)

    Sizyuk, V.; Hassanein, A.; Morozov, V.; Sizyuk, T.; Mathematics and Computer Science

    2007-01-16

    The HEIGHTS integrated model has been developed as an instrument for simulation and optimization of laser-produced plasma (LPP) sources relevant to extreme ultraviolet (EUV) lithography. The model combines three general parts: hydrodynamics, radiation transport, and heat conduction. The first part employs a total variation diminishing scheme in the Lax-Friedrich formulation (TVD-LF); the second part, a Monte Carlo model; and the third part, implicit schemes with sparse matrix technology. All model parts consider physical processes in three-dimensional geometry. The influence of a generated magnetic field on laser plasma behavior was estimated, and it was found that this effect could be neglected for laser intensities relevant to EUV (up to {approx}10{sup 12} W/cm{sup 2}). All applied schemes were tested on analytical problems separately. Benchmark modeling of the full EUV source problem with a planar tin target showed good correspondence with experimental and theoretical data. Preliminary results are presented for tin droplet- and planar-target LPP devices. The influence of three-dimensional effects on EUV properties of source is discussed.

  19. High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

    Science.gov (United States)

    Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

    2015-03-01

    We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

  20. Photoionization of atoms and molecules by intense EUV-FEL pulses and FEL seeded by high-order harmonic of ultrashort laser pulses

    International Nuclear Information System (INIS)

    Iwasaki, Atsushi; Owada, Shigeki; Yamanouchi, Kaoru; Sato, Takahiro; Nagasono, Mitsuru; Yabashi, Makina; Ishikawa, Tetsuya; Togashi, Tadashi; Takahashi, Eiji J.; Midorikawa, Katsumi; Aoyama, Makoto; Yamakawa, Koichi; Kannari, Fumihiko; Yagishita, Akira

    2012-01-01

    The advantages of SPring-8 Compact SASE Source as a light source for spectroscopic measurements in the extreme ultraviolet (EUV) wavelength region are introduced by referring to our recent study of non-linear photoionization processes of He, in which the absolute two-photon ionization cross sections of He at four different wavelengths in the 54 - 62 nm region were determined using intense pulses of the free-election laser (FEL). In addition, our recent effort to generate intense full-coherent EUV light pulses are introduced, in which significant amplification of the 13th harmonic of ultrashort laser pulses at 800 nm was achieved by FEL seeded with the 13th harmonic. (author)

  1. FIRST MEASUREMENTS OF THE MASS OF CORONAL MASS EJECTIONS FROM THE EUV DIMMING OBSERVED WITH STEREO EUVI A+B SPACECRAFT

    International Nuclear Information System (INIS)

    Aschwanden, Markus J.; Nitta, Nariaki V.; Wuelser, Jean-Pierre; Lemen, James R.; Sandman, Anne; Vourlidas, Angelos; Colaninno, Robin C.

    2009-01-01

    The masses of coronal mass ejections (CMEs) have traditionally been determined from white-light coronagraphs (based on Thomson scattering of electrons), as well as from extreme ultraviolet (EUV) dimming observed with one spacecraft. Here we develop an improved method of measuring CME masses based on EUV dimming observed with the dual STEREO/EUVI spacecraft in multiple temperature filters that includes three-dimensional volume and density modeling in the dimming region and background corona. As a test, we investigate eight CME events with previous mass determinations from STEREO/COR2, of which six cases are reliably detected with the Extreme Ultraviolet Imager (EUVI) using our automated multi-wavelength detection code. We find CME masses in the range of m CME = (2-7) x 10 15 g. The agreement between the two EUVI/A and B spacecraft is m A /m B = 1.3 ± 0.6 and the consistency with white-light measurements by COR2 is m EUVI /m COR2 = 1.1 ± 0.3. The consistency between EUVI and COR2 implies no significant mass backflows (or inflows) at r sun and adequate temperature coverage for the bulk of the CME mass in the range of T ∼ 0.5-3.0 MK. The temporal evolution of the EUV dimming allows us to also model the evolution of the CME density n e (t), volume V(t), height-time h(t), and propagation speed v(t) in terms of an adiabatically expanding self-similar geometry. We determine e-folding EUV dimming times of t D = 1.3 ± 1.4 hr. We test the adiabatic expansion model in terms of the predicted detection delay (Δt ∼ 0.7 hr) between EUVI and COR2 for the fastest CME event (2008 March 25) and find good agreement with the observed delay (Δt ∼ 0.8 hr).

  2. Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs

    Science.gov (United States)

    Keens, Simon; Rossa, Bernhard; Frei, Marcel

    2016-03-01

    As the semiconductor industry proceeds to develop ever better sources of extreme ultraviolet (EUV) light for photolithography applications, two distinct technologies have come to prominence: Tin-plasma and free electron laser (FEL) sources. Tin plasma sources have been in development within the industry for many years, and have been widely reported. Meanwhile, FELs represent the most promising alternative to create high power EUV frequencies and, while tin-plasma source development has been ongoing, such lasers have been continuously developed by academic institutions for use in fundamental research programmes in conjunction with universities and national scientific institutions. This paper follows developments in the field of academic FELs, and presents information regarding novel technologies, specifically in the area of RF design strategy, that may be incorporated into future industrial FEL systems for EUV lithography in order to minimize the necessary investment and operational costs. It goes on to try to assess the cost-benefit of an alternate RF design strategy, based upon previous studies.

  3. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-02

    A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W -1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W -1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W -1 to 1915 A W -1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  4. Atomic processes and equation of state of high Z plasmas for EUV sources and their effects on the spatial and temporal evolution of the plasmas

    Science.gov (United States)

    Sasaki, Akira; Sunahara, Atushi; Furukawa, Hiroyuki; Nishihara, Katsunobu; Nishikawa, Takeshi; Koike, Fumihiro

    2016-03-01

    Laser-produced plasma (LPP) extreme ultraviolet (EUV) light sources have been intensively investigated due to potential application to next-generation semiconductor technology. Current studies focus on the atomic processes and hydrodynamics of plasmas to develop shorter wavelength sources at λ = 6.x nm as well as to improve the conversion efficiency (CE) of λ = 13.5 nm sources. This paper examines the atomic processes of mid-z elements, which are potential candidates for λ = 6.x nm source using n=3-3 transitions. Furthermore, a method to calculate the hydrodynamics of the plasmas in terms of the initial interaction between a relatively weak prepulse laser is presented.

  5. Spatial-Resolved Measurement and Analysis of Extreme-Ultraviolet Emission Spectra from Laser-Produced Al Plasmas

    International Nuclear Information System (INIS)

    Cao Shi-Quan; Su Mao-Gen; Sun Dui-Xiong; Min Qi; Dong Chen-Zhong

    2016-01-01

    Extreme ultraviolet emission from laser-produced Al plasma is experimentally and theoretically investigated. Spatial-evolution emission spectra are measured by using the spatio-temporally resolved laser produced plasma technique. Based on the assumptions of a normalized Boltzmann distribution among the excited states and a steady-state collisional-radiative model, we succeed in reproducing the spectra at different detection positions, which are in good agreement with experiments. The decay curves about the electron temperature and electron density, as well as the fractions of individual Al ions and average ionization stage with increasing the detection distance are obtained by comparison with the experimental measurements. These parameters are critical points for deeply understanding the expanding and cooling of laser produced plasmas in vacuum. (paper)

  6. The extreme ultraviolet spectrum of G191 - B2B and the ionization of the local interstellar medium

    International Nuclear Information System (INIS)

    Green, J.; Jelinsky, P.; Bowyer, S.

    1990-01-01

    The measurement of the extreme ultraviolet spectrum of the nearby hot white dwarf G191 - B2B is reported. The results are used to derive interstellar neutral column densities of 1.6 + or - 0.2 x 10 to the 18th/sq cm and 9.8 + 2.8 or - 2.6 x 10 to the 16th/sq cm for H I and He I, respectively. This ratio of neutral hydrogen to neutral helium indicates that the ionization of hydrogen along the line of sight is less than about 30 percent unless significant helium ionization is present. The scenario in which the hydrogen is highly ionized and the helium is neutral is ruled out by this observation. 54 refs

  7. The extreme ultraviolet spectrum of G191 - B2B and the ionization of the local interstellar medium

    Science.gov (United States)

    Green, James; Jelinsky, Patrick; Bowyer, Stuart

    1990-01-01

    The measurement of the extreme ultraviolet spectrum of the nearby hot white dwarf G191 - B2B is reported. The results are used to derive interstellar neutral column densities of 1.6 + or - 0.2 x 10 to the 18th/sq cm and 9.8 + 2.8 or - 2.6 x 10 to the 16th/sq cm for H I and He I, respectively. This ratio of neutral hydrogen to neutral helium indicates that the ionization of hydrogen along the line of sight is less than about 30 percent unless significant helium ionization is present. The scenario in which the hydrogen is highly ionized and the helium is neutral is ruled out by this observation.

  8. Characteristics of soft x-ray and extreme ultraviolet (XUV) emission from laser-produced highly charged rhodium ions

    Science.gov (United States)

    Barte, Ellie Floyd; Hara, Hiroyuki; Tamura, Toshiki; Gisuji, Takuya; Chen, When-Bo; Lokasani, Ragava; Hatano, Tadashi; Ejima, Takeo; Jiang, Weihua; Suzuki, Chihiro; Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry; Sasaki, Akira; Higashiguchi, Takeshi; Limpouch, Jiří

    2018-05-01

    We have characterized the soft x-ray and extreme ultraviolet (XUV) emission of rhodium (Rh) plasmas produced using dual pulse irradiation by 150-ps or 6-ns pre-pulses, followed by a 150-ps main pulse. We have studied the emission enhancement dependence on the inter-pulse time separation and found it to be very significant for time separations less than 10 ns between the two laser pulses when using 6-ns pre-pulses. The behavior using a 150-ps pre-pulse was consistent with such plasmas displaying only weak self-absorption effects in the expanding plasma. The results demonstrate the advantage of using dual pulse irradiation to produce the brighter plasmas required for XUV applications.

  9. Plasma radiation dynamics with the upgraded Absolute Extreme Ultraviolet tomographical system in the Tokamak à Configuration Variable

    Energy Technology Data Exchange (ETDEWEB)

    Tal, B.; Nagy, D.; Veres, G. [Institute for Particle and Nuclear Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Association EURATOM, P. O. Box 49, H-1525 Budapest (Hungary); Labit, B.; Chavan, R.; Duval, B. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association EURATOM-Confédération Suisse, EPFL SB CRPP, Station 13, CH-1015 Lausanne (Switzerland)

    2013-12-15

    We introduce an upgraded version of a tomographical system which is built up from Absolute Extreme Ultraviolet-type (AXUV) detectors and has been installed on the Tokamak à Configuration Variable (TCV). The system is suitable for the investigation of fast radiative processes usually observed in magnetically confined high-temperature plasmas. The upgrade consists in the detector protection by movable shutters, some modifications to correct original design errors and the improvement in the data evaluation techniques. The short-term sensitivity degradation of the detectors, which is caused by the plasma radiation itself, has been monitored and found to be severe. The results provided by the system are consistent with the measurements obtained with the usual plasma radiation diagnostics installed on TCV. Additionally, the coupling between core plasma radiation and plasma-wall interaction is revealed. This was impossible with other available diagnostics on TCV.

  10. Charge coupled devices vs. microchannel plates in the extreme and far ultraviolet - A comparison based on the latest laboratory measurements

    Science.gov (United States)

    Vallerga, J.; Lampton, M.

    1988-01-01

    While microchannel plates (MCPs) have been established as imaging photon counters in the EUV and FUV for some years, CCDs are associated with low light level sensing at visible and near-IR wavelengths. Attention is presently given to recent proposals for CCDs' use as EUV and FUV detectors with quantum efficiencies sometimes exceeding those of MCPs; quantum resolution, format size, dynamic range, and long-term stability are also used as bases of comparison, for the cases of both space-based astronomical and spectroscopic applications.

  11. Cold-target recoil-ion momentum spectroscopy for diagnostics of high harmonics of the extreme-ultraviolet free-electron laser light source at SPring-8

    International Nuclear Information System (INIS)

    Liu, X.-J.; Fukuzawa, H.; Pruemper, G.; Ueda, K.; Okunishi, M.; Shimada, K.; Motomura, K.; Saito, N.; Iwayama, H.; Nagaya, K.; Yao, M.; Rudenko, A.; Ullrich, J.; Foucar, L.; Czasch, A.; Schmidt-Boecking, H.; Doerner, R.; Nagasono, M.; Higashiya, A.; Yabashi, M.

    2009-01-01

    We have developed a cold-target recoil-ion momentum spectroscopy apparatus dedicated to the experiments using the extreme-ultraviolet light pulses at the free-electron laser facility, SPring-8 Compact SASE Source test accelerator, in Japan and used it to measure spatial distributions of fundamental, second, and third harmonics at the end station.

  12. SWAP OBSERVATIONS OF THE LONG-TERM, LARGE-SCALE EVOLUTION OF THE EXTREME-ULTRAVIOLET SOLAR CORONA

    Energy Technology Data Exchange (ETDEWEB)

    Seaton, Daniel B.; De Groof, Anik; Berghmans, David; Nicula, Bogdan [Royal Observatory of Belgium-SIDC, Avenue Circulaire 3, B-1180 Brussels (Belgium); Shearer, Paul [Department of Mathematics, 2074 East Hall, University of Michigan, 530 Church Street, Ann Arbor, MI 48109-1043 (United States)

    2013-11-01

    The Sun Watcher with Active Pixels and Image Processing (SWAP) EUV solar telescope on board the Project for On-Board Autonomy 2 spacecraft has been regularly observing the solar corona in a bandpass near 17.4 nm since 2010 February. With a field of view of 54 × 54 arcmin, SWAP provides the widest-field images of the EUV corona available from the perspective of the Earth. By carefully processing and combining multiple SWAP images, it is possible to produce low-noise composites that reveal the structure of the EUV corona to relatively large heights. A particularly important step in this processing was to remove instrumental stray light from the images by determining and deconvolving SWAP's point-spread function from the observations. In this paper, we use the resulting images to conduct the first-ever study of the evolution of the large-scale structure of the corona observed in the EUV over a three year period that includes the complete rise phase of solar cycle 24. Of particular note is the persistence over many solar rotations of bright, diffuse features composed of open magnetic fields that overlie polar crown filaments and extend to large heights above the solar surface. These features appear to be related to coronal fans, which have previously been observed in white-light coronagraph images and, at low heights, in the EUV. We also discuss the evolution of the corona at different heights above the solar surface and the evolution of the corona over the course of the solar cycle by hemisphere.

  13. Dynamics of the spatial electron density distribution of EUV-induced plasmas

    Science.gov (United States)

    van der Horst, R. M.; Beckers, J.; Osorio, E. A.; Banine, V. Y.

    2015-11-01

    We studied the temporal evolution of the electron density distribution in a low pressure pulsed plasma induced by high energy extreme ultraviolet (EUV) photons using microwave cavity resonance spectroscopy (MCRS). In principle, MCRS only provides space averaged information about the electron density. However, we demonstrate here the possibility to obtain spatial information by combining multiple resonant modes. It is shown that EUV-induced plasmas, albeit being a rather exotic plasma, can be explained by known plasma physical laws and processes. Two stages of plasma behaviour are observed: first the electron density distribution contracts, after which it expands. It is shown that the contraction is due to cooling of the electrons. The moment when the density distribution starts to expand is related to the inertia of the ions. After tens of microseconds, the electrons reached the wall of the cavity. The speed of this expansion is dependent on the gas pressure and can be divided into two regimes. It is shown that the acoustic dominated regime the expansion speed is independent of the gas pressure and that in the diffusion dominated regime the expansion depends reciprocal on the gas pressure.

  14. Dynamics of the spatial electron density distribution of EUV-induced plasmas

    International Nuclear Information System (INIS)

    Van der Horst, R M; Beckers, J; Banine, V Y; Osorio, E A

    2015-01-01

    We studied the temporal evolution of the electron density distribution in a low pressure pulsed plasma induced by high energy extreme ultraviolet (EUV) photons using microwave cavity resonance spectroscopy (MCRS). In principle, MCRS only provides space averaged information about the electron density. However, we demonstrate here the possibility to obtain spatial information by combining multiple resonant modes. It is shown that EUV-induced plasmas, albeit being a rather exotic plasma, can be explained by known plasma physical laws and processes. Two stages of plasma behaviour are observed: first the electron density distribution contracts, after which it expands. It is shown that the contraction is due to cooling of the electrons. The moment when the density distribution starts to expand is related to the inertia of the ions. After tens of microseconds, the electrons reached the wall of the cavity. The speed of this expansion is dependent on the gas pressure and can be divided into two regimes. It is shown that the acoustic dominated regime the expansion speed is independent of the gas pressure and that in the diffusion dominated regime the expansion depends reciprocal on the gas pressure. (fast track communication)

  15. Laser-produced plasma EUV source using a colloidal microjet target containing tin dioxide nanoparticles

    Science.gov (United States)

    Higashiguchi, Takeshi; Dojyo, Naoto; Sasaki, Wataru; Kubodera, Shoichi

    2006-10-01

    We realized a low-debris laser-produced plasma extreme ultraviolet (EUV) source by use of a colloidal microjet target, which contained low-concentration (6 wt%) tin-dioxide nanoparticles. An Nd:YAG laser was used to produce a plasma at the intensity on the order of 10^11 W/cm^2. The use of low concentration nanoparticles in a microjet target with a diameter of 50 μm regulated the neutral debris emission from a target, which was monitored by a silicon witness plate placed 30 cm apart from the source in a vacuum chamber. No XPS signals of tin and/or oxygen atoms were observed on the plate after ten thousand laser exposures. The low concentration nature of the target was compensated and the conversion efficiency (CE) was improved by introducing double pulses of two Nd:YAG lasers operated at 532 and 1064 nm as a result of controlling the micro-plasma characteristics. The EUV CE reached its maximum of 1.2% at the delay time of approximately 100 ns with the main laser intensiy of 2 x10^11 W/cm^2. The CE value was comparable to that of a tin bulk target, which, however, produced a significant amount of neutral debris.

  16. Development of amorphous silicon based EUV hardmasks through physical vapor deposition

    Science.gov (United States)

    De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

    2017-10-01

    Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

  17. Correlations between variations in solar EUV and soft X-ray irradiance and photoelectron energy spectra observed on Mars and Earth

    Science.gov (United States)

    Peterson, W. K.; Brain, D. A.; Mitchell, D. L.; Bailey, S. M.; Chamberlin, P. C.

    2013-11-01

    extreme ultraviolet (EUV; 10-120 nm) and soft X-ray (XUV; 0-10 nm) radiation are major heat sources for the Mars thermosphere as well as the primary source of ionization that creates the ionosphere. In investigations of Mars thermospheric chemistry and dynamics, solar irradiance models are used to account for variations in this radiation. Because of limited proxies, irradiance models do a poor job of tracking the significant variations in irradiance intensity in the EUV and XUV ranges over solar rotation time scales when the Mars-Sun-Earth angle is large. Recent results from Earth observations show that variations in photoelectron energy spectra are useful monitors of EUV and XUV irradiance variability. Here we investigate photoelectron energy spectra observed by the Mars Global Surveyor (MGS) Electron Reflectometer (ER) and the FAST satellite during the interval in 2005 when Earth, Mars, and the Sun were aligned. The Earth photoelectron data in selected bands correlate well with calculations based on 1 nm resolution observations above 27 nm supplemented by broadband observations and a solar model in the 0-27 nm range. At Mars, we find that instrumental and orbital limitations to the identifications of photoelectron energy spectra in MGS/ER data preclude their use as a monitor of solar EUV and XUV variability. However, observations with higher temporal and energy resolution obtained at lower altitudes on Mars might allow the separation of the solar wind and ionospheric components of electron energy spectra so that they could be used as reliable monitors of variations in solar EUV and XUV irradiance than the time shifted, Earth-based, F10.7 index currently used.

  18. Correlations Between Variations in Solar EUV and Soft X-Ray Irradiance and Photoelectron Energy Spectra Observed on Mars and Earth

    Science.gov (United States)

    Peterson, W. K.; Brain, D. A.; Mitchell, D. L.; Bailey, S. M.; Chamberlin, P. C.

    2013-01-01

    Solar extreme ultraviolet (EUV; 10-120 nm) and soft X-ray (XUV; 0-10 nm) radiation are major heat sources for the Mars thermosphere as well as the primary source of ionization that creates the ionosphere. In investigations of Mars thermospheric chemistry and dynamics, solar irradiance models are used to account for variations in this radiation. Because of limited proxies, irradiance models do a poor job of tracking the significant variations in irradiance intensity in the EUV and XUV ranges over solar rotation time scales when the Mars-Sun-Earth angle is large. Recent results from Earth observations show that variations in photoelectron energy spectra are useful monitors of EUV and XUV irradiance variability. Here we investigate photoelectron energy spectra observed by the Mars Global Surveyor (MGS) Electron Reflectometer (ER) and the FAST satellite during the interval in 2005 when Earth, Mars, and the Sun were aligned. The Earth photoelectron data in selected bands correlate well with calculations based on 1 nm resolution observations above 27 nm supplemented by broadband observations and a solar model in the 0-27 nm range. At Mars, we find that instrumental and orbital limitations to the identifications of photoelectron energy spectra in MGS/ER data preclude their use as a monitor of solar EUV and XUV variability. However, observations with higher temporal and energy resolution obtained at lower altitudes on Mars might allow the separation of the solar wind and ionospheric components of electron energy spectra so that they could be used as reliable monitors of variations in solar EUV and XUV irradiance than the time shifted, Earth-based, F(10.7) index currently used.

  19. MULTI-VIEWPOINT OBSERVATIONS OF A WIDELY DISTRIBUTED SOLAR ENERGETIC PARTICLE EVENT: THE ROLE OF EUV WAVES AND WHITE-LIGHT SHOCK SIGNATURES

    Energy Technology Data Exchange (ETDEWEB)

    Kouloumvakos, A.; Patsourakos, S.; Nindos, A. [Section of Astrogeophysics, Department of Physics, University of Ioannina, 45110 Ioannina (Greece); Vourlidas, A. [The Johns Hopkins University Applied Physics Laboratory, Laurel, MD 20723 (United States); Anastasiadis, A.; Sandberg, I. [Institute for Astronomy, Astrophysics, Space Applications and Remote Sensing, National Observatory of Athens, 15236 Penteli (Greece); Hillaris, A. [Section of Astrophysics, Astronomy and Mechanics, Department of Physics, National and Kapodistrian University of Athens, 15783 Athens (Greece)

    2016-04-10

    On 2012 March 7, two large eruptive events occurred in the same active region within 1 hr from each other. Each consisted of an X-class flare, a coronal mass ejection (CME), an extreme-ultraviolet (EUV) wave, and a shock wave. The eruptions gave rise to a major solar energetic particle (SEP) event observed at widely separated (∼120°) points in the heliosphere. From multi-viewpoint energetic proton recordings we determine the proton release times at STEREO B and A (STB, STA) and the first Lagrange point (L1) of the Sun–Earth system. Using EUV and white-light data, we determine the evolution of the EUV waves in the low corona and reconstruct the global structure and kinematics of the first CME’s shock, respectively. We compare the energetic proton release time at each spacecraft with the EUV waves’ arrival times at the magnetically connected regions and the timing and location of the CME shock. We find that the first flare/CME is responsible for the SEP event at all three locations. The proton release at STB is consistent with arrival of the EUV wave and CME shock at the STB footpoint. The proton release time at L1 was significantly delayed compared to STB. Three-dimensional modeling of the CME shock shows that the particle release at L1 is consistent with the timing and location of the shock’s western flank. This indicates that at L1 the proton release did not occur in low corona but farther away from the Sun. However, the extent of the CME shock fails to explain the SEP event observed at STA. A transport process or a significantly distorted interplanetary magnetic field may be responsible.

  20. EUV high resolution imager on-board solar orbiter: optical design and detector performances

    Science.gov (United States)

    Halain, J. P.; Mazzoli, A.; Rochus, P.; Renotte, E.; Stockman, Y.; Berghmans, D.; BenMoussa, A.; Auchère, F.

    2017-11-01

    The EUV high resolution imager (HRI) channel of the Extreme Ultraviolet Imager (EUI) on-board Solar Orbiter will observe the solar atmospheric layers at 17.4 nm wavelength with a 200 km resolution. The HRI channel is based on a compact two mirrors off-axis design. The spectral selection is obtained by a multilayer coating deposited on the mirrors and by redundant Aluminum filters rejecting the visible and infrared light. The detector is a 2k x 2k array back-thinned silicon CMOS-APS with 10 μm pixel pitch, sensitive in the EUV wavelength range. Due to the instrument compactness and the constraints on the optical design, the channel performance is very sensitive to the manufacturing, alignments and settling errors. A trade-off between two optical layouts was therefore performed to select the final optical design and to improve the mirror mounts. The effect of diffraction by the filter mesh support and by the mirror diffusion has been included in the overall error budget. Manufacturing of mirror and mounts has started and will result in thermo-mechanical validation on the EUI instrument structural and thermal model (STM). Because of the limited channel entrance aperture and consequently the low input flux, the channel performance also relies on the detector EUV sensitivity, readout noise and dynamic range. Based on the characterization of a CMOS-APS back-side detector prototype, showing promising results, the EUI detector has been specified and is under development. These detectors will undergo a qualification program before being tested and integrated on the EUI instrument.

  1. UNDERCOVER EUV SOLAR JETS OBSERVED BY THE INTERFACE REGION IMAGING SPECTROGRAPH

    Energy Technology Data Exchange (ETDEWEB)

    Chen, N.-H. [Korea Astronomy and Space Science Institute, Daejeon (Korea, Republic of); Innes, D. E. [Max-Planck-Institut für Sonnensystemforschung, D-37077 Göttingen (Germany)

    2016-12-10

    It is well-known that extreme ultraviolet (EUV) emission emitted at the solar surface is absorbed by overlying cool plasma. Especially in active regions, dark lanes in EUV images suggest that much of the surface activity is obscured. Simultaneous observations from the Interface Region Imaging Spectrograph, consisting of UV spectra and slit-jaw images (SJI), give vital information with sub-arcsecond spatial resolution on the dynamics of jets not seen in EUV images. We studied a series of small jets from recently formed bipole pairs beside the trailing spot of active region 11991, which occurred on 2014 March 5 from 15:02:21 UT to 17:04:07 UT. Collimated outflows with bright roots were present in SJI 1400 Å (transition region) and 2796 Å (upper chromosphere) that were mostly not seen in Atmospheric Imaging Assembly (AIA) 304 Å (transition region) and AIA 171 Å (lower corona) images. The Si iv spectra show a strong blue wing enhancement, but no red wing, in the line profiles of the ejecta for all recurrent jets, indicating outward flows without twists. We see two types of Mg ii line profiles produced by the jets spires: reversed and non-reversed. Mg ii lines remain optically thick, but turn optically thin in the highly Doppler shifted wings. The energy flux contained in each recurrent jet is estimated using a velocity differential emission measure technique that measures the emitting power of the plasma as a function of the line-of-sight velocity. We found that all the recurrent jets release similar energy (10{sup 8} erg cm{sup −2} s{sup −1}) toward the corona and the downward component is less than 3%.

  2. Electronic structure, excitation properties, and chemical transformations of extreme ultra-violet resist materials

    Science.gov (United States)

    Rangan, Sylvie; Bartynski, Robert A.; Narasimhan, Amrit; Brainard, Robert L.

    2017-07-01

    The electronic structure of extreme ultra violet resist materials and of their individual components, two polymers and two photoacid generators (PAGs), is studied using a combination of x-ray and UV photoemission spectroscopies, electron energy loss spectroscopy, and ab-initio techniques. It is shown that simple molecular models can be used to understand the electronic structure of each sample and describe the experimental data. Additionally, effects directly relevant to the photochemical processes are observed: low energy loss processes are observed for the phenolic polymer containing samples that should favor thermalization of electrons; PAG segregation is measured at the surface of the resist films that could lead to surface inhomogeneities; both PAGs are found to be stable upon irradiation in the absence of the polymer, contrasting with a high reactivity that can be followed upon x-ray irradiation of the full resist.

  3. An extreme ultraviolet Michelson interferometer for experiments at free-electron lasers

    International Nuclear Information System (INIS)

    Hilbert, Vinzenz; Fuchs, Silvio; Paulus, Gerhard G.; Zastrau, Ulf; Blinne, Alexander; Feigl, Torsten; Kämpfer, Tino; Rödel, Christian; Uschmann, Ingo; Wünsche, Martin; Förster, Eckhart

    2013-01-01

    We present a Michelson interferometer for 13.5 nm soft x-ray radiation. It is characterized in a proof-of-principle experiment using synchrotron radiation, where the temporal coherence is measured to be 13 fs. The curvature of the thin-film beam splitter membrane is derived from the observed fringe pattern. The applicability of this Michelson interferometer at intense free-electron lasers is investigated, particularly with respect to radiation damage. This study highlights the potential role of such Michelson interferometers in solid density plasma investigations using, for instance, extreme soft x-ray free-electron lasers. A setup using the Michelson interferometer for pseudo-Nomarski-interferometry is proposed

  4. An extreme ultraviolet Michelson interferometer for experiments at free-electron lasers.

    Science.gov (United States)

    Hilbert, Vinzenz; Blinne, Alexander; Fuchs, Silvio; Feigl, Torsten; Kämpfer, Tino; Rödel, Christian; Uschmann, Ingo; Wünsche, Martin; Paulus, Gerhard G; Förster, Eckhart; Zastrau, Ulf

    2013-09-01

    We present a Michelson interferometer for 13.5 nm soft x-ray radiation. It is characterized in a proof-of-principle experiment using synchrotron radiation, where the temporal coherence is measured to be 13 fs. The curvature of the thin-film beam splitter membrane is derived from the observed fringe pattern. The applicability of this Michelson interferometer at intense free-electron lasers is investigated, particularly with respect to radiation damage. This study highlights the potential role of such Michelson interferometers in solid density plasma investigations using, for instance, extreme soft x-ray free-electron lasers. A setup using the Michelson interferometer for pseudo-Nomarski-interferometry is proposed.

  5. X-RAY AND EUV OBSERVATIONS OF SIMULTANEOUS SHORT AND LONG PERIOD OSCILLATIONS IN HOT CORONAL ARCADE LOOPS

    International Nuclear Information System (INIS)

    Kumar, Pankaj; Cho, Kyung-Suk; Nakariakov, Valery M.

    2015-01-01

    We report decaying quasi-periodic intensity oscillations in the X-ray (6–12 keV) and extreme-ultraviolet (EUV) channels (131, 94, 1600, 304 Å) observed by the Fermi Gamma-ray Burst Monitor and Solar Dynamics Observatory/Atmospheric Imaging Assembly (AIA), respectively, during a C-class flare. The estimated periods of oscillation and decay time in the X-ray channel (6–12 keV) were about 202 and 154 s, respectively. A similar oscillation period was detected at the footpoint of the arcade loops in the AIA 1600 and 304 Å channels. Simultaneously, AIA hot channels (94 and 131 Å) reveal propagating EUV disturbances bouncing back and forth between the footpoints of the arcade loops. The period of the oscillation and decay time were about 409 and 1121 s, respectively. The characteristic phase speed of the wave is about 560 km s −1 for about 115 Mm of loop length, which is roughly consistent with the sound speed at the temperature about 10–16 MK (480–608 km s −1 ). These EUV oscillations are consistent with the Solar and Heliospheric Observatory/Solar Ultraviolet Measurement of Emitted Radiation Doppler-shift oscillations interpreted as the global standing slow magnetoacoustic wave excited by a flare. The flare occurred at one of the footpoints of the arcade loops, where the magnetic topology was a 3D fan-spine with a null-point. Repetitive reconnection at this footpoint could have caused the periodic acceleration of non-thermal electrons that propagated to the opposite footpoint along the arcade and that are precipitating there, causing the observed 202 s periodicity. Other possible interpretations, e.g., the second harmonics of the slow mode, are also discussed

  6. X-RAY AND EUV OBSERVATIONS OF SIMULTANEOUS SHORT AND LONG PERIOD OSCILLATIONS IN HOT CORONAL ARCADE LOOPS

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pankaj; Cho, Kyung-Suk [Korea Astronomy and Space Science Institute (KASI), Daejeon, 305-348 (Korea, Republic of); Nakariakov, Valery M., E-mail: pankaj@kasi.re.kr [Centre for Fusion, Space and Astrophysics, Department of Physics, University of Warwick, CV4 7AL (United Kingdom)

    2015-05-01

    We report decaying quasi-periodic intensity oscillations in the X-ray (6–12 keV) and extreme-ultraviolet (EUV) channels (131, 94, 1600, 304 Å) observed by the Fermi Gamma-ray Burst Monitor and Solar Dynamics Observatory/Atmospheric Imaging Assembly (AIA), respectively, during a C-class flare. The estimated periods of oscillation and decay time in the X-ray channel (6–12 keV) were about 202 and 154 s, respectively. A similar oscillation period was detected at the footpoint of the arcade loops in the AIA 1600 and 304 Å channels. Simultaneously, AIA hot channels (94 and 131 Å) reveal propagating EUV disturbances bouncing back and forth between the footpoints of the arcade loops. The period of the oscillation and decay time were about 409 and 1121 s, respectively. The characteristic phase speed of the wave is about 560 km s{sup −1} for about 115 Mm of loop length, which is roughly consistent with the sound speed at the temperature about 10–16 MK (480–608 km s{sup −1}). These EUV oscillations are consistent with the Solar and Heliospheric Observatory/Solar Ultraviolet Measurement of Emitted Radiation Doppler-shift oscillations interpreted as the global standing slow magnetoacoustic wave excited by a flare. The flare occurred at one of the footpoints of the arcade loops, where the magnetic topology was a 3D fan-spine with a null-point. Repetitive reconnection at this footpoint could have caused the periodic acceleration of non-thermal electrons that propagated to the opposite footpoint along the arcade and that are precipitating there, causing the observed 202 s periodicity. Other possible interpretations, e.g., the second harmonics of the slow mode, are also discussed.

  7. Fiscal 2000 survey and research achievement report on the survey and research on next-generation EUVL (extreme ultraviolet lithography) technology; 2000 nendo jisedai EUVL (Extreme Ultra-Violet Lithography) gijutsu chosa kenkyu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    While surveys of technical progress and tasks of EUVL in Japan and overseas are under way for submitting a proposition for the industrialization of EUVL technology by expatiating the results of the EUVL research and development program scheduled to be complete in fiscal 2001, the future of EUVL is considered. The survey results are summarized in five chapters which involve (1) the outlines of survey and research results, (2) technical trends of lithography, (3) systems for EUVL research and development in the world, and (5) the conclusion. In chapter (4), light sources, systems (exposure devices), masks, resists, and other element technologies are investigated. The survey results about light sources involve the background against which their development is described, performance that an extreme ultraviolet ray source is requested to have, candidate EUVL light sources, their technical features and tasks they present, and the latest trends overseas. Concerning the exposure device, the body (device constitution), stage, sensor, projection system, and the irradiation system are investigated. As for masks, the outline of a EUVL mask, masking substrate, multilayer film fabrication, masking pattern formation, and other tasks for development are investigated. (NEDO)

  8. EUV sources for the alpha-tools

    Science.gov (United States)

    Pankert, Joseph; Apetz, Rolf; Bergmann, Klaus; Damen, Marcel; Derra, Günther; Franken, Oliver; Janssen, Maurice; Jonkers, Jeroen; Klein, Jürgen; Kraus, Helmar; Krücken, Thomas; List, Andreas; Loeken, Micheal; Mader, Arnaud; Metzmacher, Christof; Neff, Willi; Probst, Sven; Prümmer, Ralph; Rosier, Oliver; Schwabe, Stefan; Seiwert, Stefan; Siemons, Guido; Vaudrevange, Dominik; Wagemann, Dirk; Weber, Achim; Zink, Peter; Zitzen, Oliver

    2006-03-01

    In this paper, we report on the recent progress of the Philips Extreme UV source. The Philips source concept is based on a discharge plasma ignited in a Sn vapor plume that is ablated by a laser pulse. Using rotating electrodes covered with a regenerating tin surface, the problems of electrode erosion and power scaling are fundamentally solved. Most of the work of the past year has been dedicated to develop a lamp system which is operating very reliably and stable under full scanner remote control. Topics addressed were the development of the scanner interface, a dose control system, thermo-mechanical design, positional stability of the source, tin handling, and many more. The resulting EUV source-the Philips NovaTin(R) source-can operate at more than 10kW electrical input power and delivers 200W in-band EUV into 2π continuously. The source is very small, so nearly 100% of the EUV radiation can be collected within etendue limits. The lamp system is fully automated and can operate unattended under full scanner remote control. 500 Million shots of continuous operation without interruption have been realized, electrode lifetime is at least 2 Billion shots. Three sources are currently being prepared, two of them will be integrated into the first EUV Alpha Demonstration tools of ASML. The debris problem was reduced to a level which is well acceptable for scanner operation. First, a considerable reduction of the Sn emission of the source has been realized. The debris mitigation system is based on a two-step concept using a foil trap based stage and a chemical cleaning stage. Both steps were improved considerably. A collector lifetime of 1 Billion shots is achieved, after this operating time a cleaning would be applied. The cleaning step has been verified to work with tolerable Sn residues. From the experimental results, a total collector lifetime of more than 10 Billion shots can be expected.

  9. THE MUSCLES TREASURY SURVEY. II. INTRINSIC LY α AND EXTREME ULTRAVIOLET SPECTRA OF K AND M DWARFS WITH EXOPLANETS

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, Allison; France, Kevin; Loyd, R. O. Parke [Laboratory for Atmospheric and Space Physics, University of Colorado, 600 UCB, Boulder, CO 80309 (United States); Linsky, Jeffrey L. [JILA, University of Colorado and NIST, 440 UCB, Boulder, CO 80309 (United States); Redfield, Seth [Astronomy Department and Van Vleck Observatory, Wesleyan University, Middletown, CT 06459-0123 (United States); Schneider, P. Christian [European Space Research and Technology Centre (ESA/ESTEC), Keplerlaan 1, 2201 AZ Noordwijk (Netherlands); Wood, Brian E. [Naval Research Laboratory, Space Science Division, Washington, DC 20375 (United States); Brown, Alexander [Center for Astrophysics and Space Astronomy, University of Colorado, 389 UCB, Boulder, CO 80309 (United States); Froning, Cynthia [Dept. of Astronomy C1400, University of Texas, Austin, TX 78712 (United States); Miguel, Yamila [Laboratoire Lagrange, Universite de Nice-Sophia Antipolis, Observatoire de la Cote d’Azur, CNRS, Blvd de l’Observatoire, CS 34229, F-06304 Nice cedex 4 (France); Rugheimer, Sarah [Department of Earth and Environmental Sciences, Irvine Building, University of St. Andrews, St. Andrews KY16 9AL (United Kingdom); Walkowicz, Lucianne, E-mail: allison.youngblood@colorado.edu [The Adler Planetarium, 1300 S Lakeshore Dr, Chicago, IL 60605 (United States)

    2016-06-20

    The ultraviolet (UV) spectral energy distributions (SEDs) of low-mass (K- and M-type) stars play a critical role in the heating and chemistry of exoplanet atmospheres, but are not observationally well-constrained. Direct observations of the intrinsic flux of the Ly α line (the dominant source of UV photons from low-mass stars) are challenging, as interstellar H i absorbs the entire line core for even the closest stars. To address the existing gap in empirical constraints on the UV flux of K and M dwarfs, the MUSCLES Hubble Space Telescope Treasury Survey has obtained UV observations of 11 nearby M and K dwarfs hosting exoplanets. This paper presents the Ly α and extreme-UV spectral reconstructions for the MUSCLES targets. Most targets are optically inactive, but all exhibit significant UV activity. We use a Markov Chain Monte Carlo technique to correct the observed Ly α profiles for interstellar absorption, and we employ empirical relations to compute the extreme-UV SED from the intrinsic Ly α flux in ∼100 Å bins from 100–1170 Å. The reconstructed Ly α profiles have 300 km s{sup −1} broad cores, while >1% of the total intrinsic Ly α flux is measured in extended wings between 300 and 1200 km s{sup −1}. The Ly α surface flux positively correlates with the Mg ii surface flux and negatively correlates with the stellar rotation period. Stars with larger Ly α surface flux also tend to have larger surface flux in ions formed at higher temperatures, but these correlations remain statistically insignificant in our sample of 11 stars. We also present H i column density measurements for 10 new sightlines through the local interstellar medium.

  10. SPECTROSCOPIC OBSERVATIONS OF CONTINUOUS OUTFLOWS AND PROPAGATING WAVES FROM NOAA 10942 WITH EXTREME ULTRAVIOLET IMAGING SPECTROMETER/HINODE

    International Nuclear Information System (INIS)

    Nishizuka, N.; Hara, H.

    2011-01-01

    We focused on 'sit-and-stare' observations of an outflow region at the edge of active region NOAA 10942 on 2007 February 20 obtained by the Extreme ultraviolet Imaging Spectrometer on board Hinode. We analyzed the data above the base of the outflow and found both continuous outflows and waves, which propagate from the base of the outflow. The spectra at the base of the outflow and at higher locations show different properties. The line profiles show blue-side asymmetry at the base of the outflow where nonthermal broadening becomes large because of fast upflows generated by heating events. On the other hand, at higher locations line profiles are symmetric and the intensity disturbances vary in phase with the velocity disturbances. The correlations between the intensity and velocity disturbances become noticeable at higher locations, so this indicates evidence of (at least locally) upward propagating slow-mode waves along the outflow. We also found a transient oscillation of different period in the wavelet spectrum. This indicates that a different wave is additionally observed during a limited period. High cadence spectroscopic observations revealed intermittent signatures of nonthermal velocities. Each of them seems to correspond to the base of the propagating disturbances. Furthermore, a jet was captured by the sit-and-stare observations across the slit. The similarity of line profiles of the outflow and the jet may indicate that the flows and waves originate in unresolved explosive events in the lower atmosphere of the corona.

  11. Excluded volume effects caused by high concentration addition of acid generators in chemically amplified resists used for extreme ultraviolet lithography

    Science.gov (United States)

    Kozawa, Takahiro; Watanabe, Kyoko; Matsuoka, Kyoko; Yamamoto, Hiroki; Komuro, Yoshitaka; Kawana, Daisuke; Yamazaki, Akiyoshi

    2017-08-01

    The resolution of lithography used for the high-volume production of semiconductor devices has been improved to meet the market demands for highly integrated circuits. With the reduction in feature size, the molecular size becomes non-negligible in the resist material design. In this study, the excluded volume effects caused by adding high-concentration acid generators were investigated for triphenylsulfonium nonaflate. The resist film density was measured by X-ray diffractometry. The dependences of absorption coefficient and protected unit concentration on acid generator weight ratio were calculated from the measured film density. Using these values, the effects on the decomposition yield of acid generators, the protected unit fluctuation, and the line edge roughness (LER) were evaluated by simulation on the basis of sensitization and reaction mechanisms of chemically amplified extreme ultraviolet resists. The positive effects of the increase in acid generator weight ratio on LER were predominant below the acid generator weight ratio of 0.3, while the negative effects became equivalent to the positive effects above the acid generator weight ratio of 0.3 owing to the excluded volume effects.

  12. Characterization of extreme ultraviolet light-emitting plasmas from a laser-excited fluorine containing liquid polymer jet target

    International Nuclear Information System (INIS)

    Abel, B.; Assmann, J.; Faubel, M.; Gaebel, K.; Kranzusch, S.; Lugovoj, E.; Mann, K.; Missalla, T.; Peth, Ch.

    2004-01-01

    The operation of a liquid polymer jet laser-plasma target and the characterization of the absolute x-ray emission in the extreme ultraviolet wavelength window from 9-19 nm is reported. The target is a liquid polymer (perfluoro-polyether) that is exposed to pulsed and focused laser light at 532 nm in the form of a thin, liquid microjet (d=40 to 160 μm) in vacuum. The spectral brightness of the source in the 13 nm range is relatively high because a large fraction of radiative energy is emitted in one single line only, which is assigned to be the 2p-3d F VII doublet at 12.8 nm, with a laser energy conversion efficiency of 0.45% (2π sr, 2% bandwidth) in our initial experiment. A further increase of the relative emission has been found in the wavelength range between 7 and 17 nm when the jet diameter was increased from 40 to 160 μm. The two-dimensional spatial profile of the source plasma (d=40 to 50 μm) has been analyzed with a pinhole camera

  13. Thermal transport studies using extreme ultraviolet spectroscopy: Final technical report, 5 March 1986-30 June 1987

    International Nuclear Information System (INIS)

    Griem, H.R.

    1987-12-01

    Thermal transport was investigated in laser-produced plasmas using spectroscopic measurements in the extreme ultraviolet. Theoretical work in collaboration with the University of Rochester allowed comparisons to be made of experimental spectra to a lagrangian hydrodynamic code. Results showed that transport is influenced by thermal flux inhibition in addition to non-uniformities in the laser irradiation. This work is a continuation of last year's project in which the main thermal transport results are reported. Very rich spectra were obtained in these experiments which yielded additional information on the ablating plasmas. A doppler shift was observed for neonlike titanium lines relative to higher ionization states of Ti. This shift is attributed to differences in expansion velocities between different charge states of Ti. A detailed report discussing this effect is attached. New lines were identified for Ti XXI and Ti XIX from these spectra in the wavelength region from 12 to 15 /angstrom/. The new heliumlike lines of Ti can exhibit population inversion and are candidates for x-ray laser experiments. A preprint of this paper is attached. Finally, line ratios of Ti XIX and Ti XX were employed to determine electron densities and temperatures. A report is also attached discussing these results

  14. Preliminary result on quantitative analysis using Zn-like tungsten EUV spectrum in Large Helical Device

    International Nuclear Information System (INIS)

    Morita, Shigeru; Dong, Chunfeng; Wang, Erhui

    2013-01-01

    Tungsten study through visible, vacuum ultraviolet (VUV) and extreme ultraviolet (EUV) spectroscopy has been recently started in Large Helical Device (LHD) for developing the diagnostic method in International Thermonuclear Experimental Reactor (ITER) and understanding the tungsten transport in helical system. In order to study the tungsten spectra from core plasmas of LHD, several tungsten spectra are observed in EUV range by injecting a carbon pellet with tungsten. Zn-like tungsten spectrum with 4p-4s transition is clearly identified at 60.9Å in high-temperature phase (T_e ≥ 2.3 keV) of NBI discharges in addition to several unresolved transition arrays with 6g-4f, 5g-4f, 5f-4d, 5g-4f, 4f-4d and 4d-4p transitions in range of 10-70Å. Radial profile of the Zn-like tungsten is also successfully observed with enough intensity in order of 10"1"6 photons.cm"-"2.s"-"1. The radial emissivity profile reconstructed from the chord-integrated intensity profile is analyzed with combination of HULLAC code for emission coefficient calculation of the Zn-like transition and impurity transport code included ADPAK code for calculation of ionization and recombination rate coefficients. Thus, a total tungsten ion density of 3.5x10"1"0 cm"-"3 at the plasma center is reasonably obtained in discharge with central electron density of 4x10"1"3 cm"-"3 as the first experimental trial. The present result demonstrates that the Zn-like 4p-4s transition is applicable to the tungsten diagnostics in high-temperature plasmas. (author)

  15. Extreme ultraviolet and soft x-ray diagnostics of high-temperature plasmas. Annual progress report, June 1, 1976--May 31, 1977

    International Nuclear Information System (INIS)

    Moos, H.W.; Armstrong, L. Jr.; Fastie, W.G.

    1977-01-01

    The results of the research program at this laboratory from mid February 1976 until January 31, 1977, are described. The four major research areas of the program: diagnostic studies of magnetically confined high temperature plasmas, supporting laboratory studies, theoretical studies of highly ionized atoms, and instrument development are discussed. Spatially resolved ultraviolet measurements on Elmo Bumpy Torus have determined impurity confinement times. The measured oxygen densities and fluxes are being determined at Alcator; the spectroscopic studies show that hydrogen discharges in this tokamak have an effective Z close to one. A laboratory study of the Penning discharge between 100 and 300 A shows that it is a bright source for evaluation of EUV diagnostic instrumentation. Design of a multispatial element spectrometer system is complete and construction has begun. A spectrophotometer compatible with both types of facilities is available for absolute intensity calibration transfer from the NBS SURF II facility to ERDA plasma facilities. Computer programs needed for relativistic calculation of transition probabilities and wavelengths have been completed and applied to calculations in the Li, Be, Ar, and K isoelectronic sequences

  16. Radiometry for the EUV lithography; Radiometrie fuer die EUV-Lithographie

    Energy Technology Data Exchange (ETDEWEB)

    Scholze, Frank [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany). Arbeitsgruppe ' EUV-Radiometrie' ; Laubis, Christian; Barboutis, Annett; Buchholz, Christian; Fischer, Andreas; Puls, Jana; Stadelhoff, Christian

    2014-12-15

    The EUV reflectrometry at the PTB storage BESSY I and BESSY II is described. Results on the reflectivities of some EUV mirrors are presented. Finally the spectral sensitivities of different photodiodes used as EUV detectors are presented. (HSI)

  17. A problem to be solved for tungsten diagnostics through EUV spectroscopy in fusion devices

    International Nuclear Information System (INIS)

    Morita, S.; Murakami, I.; Sakaue, H.A.; Dong, C.F.; Goto, M.; Kato, D.; Oishi, T.; Huang, X.L.; Wang, E.H.

    2013-01-01

    Tungsten spectra have been observed from Large Helical Device (LHD) in extreme ultraviolet (EUV) wavelength ranges of 10-650Å. When the electron temperature is less than 2keV, the EUV spectra from plasma core are dominated by unresolved transition array (UTA) composing of a lot of spectral lines, e.g., 6g-4f, 5g-4f, 5f-4d and 5p-4d transitions for W"+"2"4"-"+"3"3 in 15-35Å. In order to understand the UTA spectrum, the EUV spectra measured from LHD plasmas are compared to those measured from Compact electron Beam Ion Trap (CoBIT), in which the electron beam is operated with monoenergetic energy of E_e ≤ 2keV. The tungsten spectra from LHD are well analyzed based on the knowledge from CoBIT tungsten spectra. The collisional-radiative (C-R) model has been developed to explain the UTA spectra from LHD in details. Radial profiles of EUV spectra from highly ionized tungsten ions have been measured and analyzed by impurity transport simulation code with ADPAK atomic database to examine the ionization balance determined by ionization and recombination rate coefficients. If the electron temperature is higher than 2keV, Zn-like WXLV (W"4"4"+) and Cu-like WXLVI (W"4"5"+) spectra can be observed in LHD. Such ions of W"4"4"+ and W"4"5"+ can exhibit much simpler atomic configuration compared to other ionization stages of tungsten. Quantitative analysis of the tungsten density is attempted for the first time on the radial profile of Zn-like WXLV (W"4"4"+) 4p-4s transition measured at 60.9Å, based on the emission rate coefficient calculated with HULLAC code. As a result, a total tungsten ion density of 3.5x10"1"0 cm"-"3 at the plasma center of LHD is reasonably obtained. Finally, the present problem for tungsten diagnostics in fusion plasmas is summarized. (author)

  18. EUV-driven ionospheres and electron transport on extrasolar giant planets orbiting active stars

    Science.gov (United States)

    Chadney, J. M.; Galand, M.; Koskinen, T. T.; Miller, S.; Sanz-Forcada, J.; Unruh, Y. C.; Yelle, R. V.

    2016-03-01

    The composition and structure of the upper atmospheres of extrasolar giant planets (EGPs) are affected by the high-energy spectrum of their host stars from soft X-rays to the extreme ultraviolet (EUV). This emission depends on the activity level of the star, which is primarily determined by its age. In this study, we focus upon EGPs orbiting K- and M-dwarf stars of different ages - ɛ Eridani, AD Leonis, AU Microscopii - and the Sun. X-ray and EUV (XUV) spectra for these stars are constructed using a coronal model. These spectra are used to drive both a thermospheric model and an ionospheric model, providing densities of neutral and ion species. Ionisation - as a result of stellar radiation deposition - is included through photo-ionisation and electron-impact processes. The former is calculated by solving the Lambert-Beer law, while the latter is calculated from a supra-thermal electron transport model. We find that EGP ionospheres at all orbital distances considered (0.1-1 AU) and around all stars selected are dominated by the long-lived H+ ion. In addition, planets with upper atmospheres where H2 is not substantially dissociated (at large orbital distances) have a layer in which H3+ is the major ion at the base of the ionosphere. For fast-rotating planets, densities of short-lived H3+ undergo significant diurnal variations, with the maximum value being driven by the stellar X-ray flux. In contrast, densities of longer-lived H+ show very little day/night variability and the magnitude is driven by the level of stellar EUV flux. The H3+ peak in EGPs with upper atmospheres where H2 is dissociated (orbiting close to their star) under strong stellar illumination is pushed to altitudes below the homopause, where this ion is likely to be destroyed through reactions with heavy species (e.g. hydrocarbons, water). The inclusion of secondary ionisation processes produces significantly enhanced ion and electron densities at altitudes below the main EUV ionisation peak, as

  19. Spitzer Infrared Spectrograph Observations of the Galactic Center: Quantifying the Extreme Ultraviolet/Soft X-ray Fluxes

    Science.gov (United States)

    Simpson, Janet P.

    2018-04-01

    It has long been shown that the extreme ultraviolet spectrum of the ionizing stars of H II regions can be estimated by comparing the observed line emission to detailed models. In the Galactic Center (GC), however, previous observations have shown that the ionizing spectral energy distribution (SED) of the local photon field is strange, producing both very low excitation ionized gas (indicative of ionization by late O stars) and also widespread diffuse emission from atoms too highly ionized to be found in normal H II regions. This paper describes the analysis of all GC spectra taken by Spitzer's Infrared Spectrograph and downloaded from the Spitzer Heritage Archive. In it, H II region densities and abundances are described, and serendipitously discovered candidate planetary nebulae, compact shocks, and candidate young stellar objects are tabulated. Models were computed with Cloudy, using SEDs from Starburst99 plus additional X-rays, and compared to the observed mid-infrared forbidden and recombination lines. The ages inferred from the model fits do not agree with recent proposed star formation sequences (star formation in the GC occurring along streams of gas with density enhancements caused by close encounters with the black hole, Sgr A*), with Sgr B1, Sgr C, and the Arches Cluster being all about the same age, around 4.5 Myr old, with similar X-ray requirements. The fits for the Quintuplet Cluster appear to give a younger age, but that could be caused by higher-energy photons from shocks from stellar winds or from a supernova.

  20. Chromospheric Evaporation in an M1.8 Flare Observed by the Extreme-ultraviolet Imaging Spectrometer (EIS) on Hinode

    Science.gov (United States)

    Doschek, G. A.; Warren, H. P.

    2012-12-01

    We discuss observations of chromospheric evaporation for a flare that occurred on 9 March 2012 near 03:30 UT obtained from the Extreme-ultraviolet Imaging Spectrometer (EIS) on the Hinode spacecraft. This was a multiple event with a strong energy input that reached the M1.8 class when observed by EIS. EIS was in raster mode and fortunately the slit reached almost the exact location of a significant energy input. Also, fortunately EIS obtained a full-CCD spectrum of the flare, i.e., the entire CCD was readout so that data were obtained for about the 500 lines identified in the EIS wavelength ranges. Chromospheric evaporation characterized by 150-200 km/s upflows was observed in several locations in multi-million degree spectral lines of flare ions such as Fe XXII, Fe XXIII, Fe XXIV, with simultaneous 20 - 60 km/s upflows in a host of million degree coronal lines from ions such as Fe XI - Fe XVI. The behavior of cooler, transition region ions such as O VI, Fe VIII, He II, and Fe X is more complex. At a point close to strong energy input, the flare ions reveal an isothermal source with a temperature close to 14 MK. At this point there is a strong downflow in cooler active region lines from ions such as Fe XIII and Fe XIV. Electron densities were obtained from density sensitive lines ratios from Fe XIII and Fe XIV. The results to be presented are refined from the preliminary data given above and combined with context AIA observations for a comparison with predictions of models of chromospheric evaporation as envisaged in the Standard Flare Model.

  1. Transition state region in the A-Band photodissociation of allyl iodide—A femtosecond extreme ultraviolet transient absorption study

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacherjee, Aditi, E-mail: abhattacherjee@berkeley.edu, E-mail: andrewattar@berkeley.edu; Attar, Andrew R., E-mail: abhattacherjee@berkeley.edu, E-mail: andrewattar@berkeley.edu [Department of Chemistry, University of California, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Leone, Stephen R., E-mail: srl@berkeley.edu [Department of Chemistry, University of California, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-03-28

    Femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy based on a high-harmonic generation source is used to study the 266 nm induced A-band photodissociation dynamics of allyl iodide (CH{sub 2} =CHCH{sub 2}I). The photolysis of the C—I bond at this wavelength produces iodine atoms both in the ground ({sup 2}P{sub 3/2}, I) and spin-orbit excited ({sup 2}P{sub 1/2}, I*) states, with the latter as the predominant channel. Using XUV absorption at the iodine N{sub 4/5} edge (45–60 eV), the experiments constitute a direct probe of not only the long-lived atomic iodine reaction products but also the fleeting transition state region of the repulsive n{sub I}σ{sup ∗}{sub C—I} excited states. Specifically, three distinct features are identified in the XUV transient absorption spectrum at 45.3 eV, 47.4 eV, and 48.4 eV (denoted transients A, B, and C, respectively), which arise from the repulsive valence-excited nσ{sup ∗} states and project onto the high-lying core-excited states of the dissociating molecule via excitation of 4d(I) core electrons. Transients A and B originate from 4d(I) → n(I) core-to-valence transitions, whereas transient C is best assigned to a 4d(I) →σ{sup ∗}(C—I) transition. The measured differential absorbance of these new features along with the I/I* branching ratios known from the literature is used to suggest a more definitive assignment, albeit provisional, of the transients to specific dissociative states within the A-band manifold. The transients are found to peak around 55 fs–65 fs and decay completely by 145 fs–185 fs, demonstrating the ability of XUV spectroscopy to map the evolution of reactants into products in real time. The similarity in the energies of transients A and B with analogous features observed in methyl iodide [Attar et al. J. Phys. Chem. Lett. 6, 5072, (2015)] together with the new observation of transient C in the present work provides a more complete picture of the valence electronic

  2. CHROMOSPHERIC EVAPORATION IN AN M1.8 FLARE OBSERVED BY THE EXTREME-ULTRAVIOLET IMAGING SPECTROMETER ON HINODE

    International Nuclear Information System (INIS)

    Doschek, G. A.; Warren, H. P.; Young, P. R.

    2013-01-01

    We discuss observations of chromospheric evaporation for a complex flare that occurred on 2012 March 9 near 03:30 UT obtained from the Extreme-ultraviolet Imaging Spectrometer (EIS) on board the Hinode spacecraft. This was a multiple event with a strong energy input that reached the M1.8 class when observed by EIS. EIS was in raster mode and fortunately the slit was almost at the exact location of a significant energy input. Also, EIS obtained a full-CCD spectrum of the flare, i.e., the entire CCD was readout so that data were obtained for about the 500 lines identified in the EIS wavelength ranges. Chromospheric evaporation characterized by 150-200 km s –1 upflows was observed in multiple locations in multi-million degree spectral lines of flare ions such as Fe XXII, Fe XXIII, and Fe XXIV, with simultaneous 20-60 km s –1 upflows in million degree coronal lines from ions such as Fe XII-Fe XVI. The behavior of cooler, transition region ions such as O VI, Fe VIII, He II, and Fe X is more complex, but upflows were also observed in Fe VIII and Fe X lines. At a point close to strong energy input in space and time, the flare ions Fe XXII, Fe XXIII, and Fe XXIV reveal an isothermal source with a temperature close to 14 MK and no strong blueshifted components. At this location there is a strong downflow in cooler active region lines from ions such as Fe XIII and Fe XIV, on the order of 200 km s –1 . We speculate that this downflow may be evidence of the downward shock produced by reconnection in the current sheet seen in MHD simulations. A sunquake also occurred near this location. Electron densities were obtained from density sensitive lines ratios from Fe XIII and Fe XIV. Atmospheric Imaging Assembly (AIA) observations from the Solar Dynamics Observatory are used with JHelioviewer to obtain a qualitative overview of the flare. However, AIA data are not presented in this paper. In summary, spectroscopic data from EIS are presented that can be used for predictive

  3. Chromospheric Evaporation in an M1.8 Flare Observed by the Extreme-ultraviolet Imaging Spectrometer on Hinode

    Science.gov (United States)

    Doschek, G. A.; Warren, H. P.; Young, P. R.

    2013-04-01

    We discuss observations of chromospheric evaporation for a complex flare that occurred on 2012 March 9 near 03:30 UT obtained from the Extreme-ultraviolet Imaging Spectrometer (EIS) on board the Hinode spacecraft. This was a multiple event with a strong energy input that reached the M1.8 class when observed by EIS. EIS was in raster mode and fortunately the slit was almost at the exact location of a significant energy input. Also, EIS obtained a full-CCD spectrum of the flare, i.e., the entire CCD was readout so that data were obtained for about the 500 lines identified in the EIS wavelength ranges. Chromospheric evaporation characterized by 150-200 km s-1 upflows was observed in multiple locations in multi-million degree spectral lines of flare ions such as Fe XXII, Fe XXIII, and Fe XXIV, with simultaneous 20-60 km s-1 upflows in million degree coronal lines from ions such as Fe XII-Fe XVI. The behavior of cooler, transition region ions such as O VI, Fe VIII, He II, and Fe X is more complex, but upflows were also observed in Fe VIII and Fe X lines. At a point close to strong energy input in space and time, the flare ions Fe XXII, Fe XXIII, and Fe XXIV reveal an isothermal source with a temperature close to 14 MK and no strong blueshifted components. At this location there is a strong downflow in cooler active region lines from ions such as Fe XIII and Fe XIV, on the order of 200 km s-1. We speculate that this downflow may be evidence of the downward shock produced by reconnection in the current sheet seen in MHD simulations. A sunquake also occurred near this location. Electron densities were obtained from density sensitive lines ratios from Fe XIII and Fe XIV. Atmospheric Imaging Assembly (AIA) observations from the Solar Dynamics Observatory are used with JHelioviewer to obtain a qualitative overview of the flare. However, AIA data are not presented in this paper. In summary, spectroscopic data from EIS are presented that can be used for predictive tests of

  4. Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

    Science.gov (United States)

    Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

    2007-03-01

    The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

  5. Off-limb EUV observations of the solar corona and transients with the CORONAS-F/SPIRIT telescope-coronagraph

    Directory of Open Access Journals (Sweden)

    V. Slemzin

    2008-10-01

    Full Text Available The SPIRIT telescope aboard the CORONAS-F satellite (in orbit from 26 July 2001 to 5 December 2005, observed the off-limb solar corona in the 175 Å (Fe IX, X and XI lines and 304 Å (He II and Si XI lines bands. In the coronagraphic mode the mirror was tilted to image the corona at the distance of 1.1...5 Rsun from the solar center, the outer occulter blocked the disk radiation and the detector sensitivity was enhanced. This intermediate region between the fields of view of ordinary extreme-ultraviolet (EUV telescopes and most of the white-light (WL coronagraphs is responsible for forming the streamer belt, acceleration of ejected matter and emergence of slow and fast solar wind. We present here the results of continuous coronagraphic EUV observations of the solar corona carried out during two weeks in June and December 2002. The images showed a "diffuse" (unresolved component of the corona seen in both bands, and non-radial, ray-like structures seen only in the 175 Å band, which can be associated with a streamer base. The correlations between latitudinal distributions of the EUV brightness in the corona and at the limb were found to be high in 304 Å at all distances and in 175 Å only below 1.5 Rsun. The temporal correlation of the coronal brightness along the west radial line, with the brightness at the underlying limb region was significant in both bands, independent of the distance. On 2 February 2003 SPIRIT observed an expansion of a transient associated with a prominence eruption seen only in the 304 Å band. The SPIRIT data have been compared with the corresponding data of the SOHO LASCO, EIT and UVCS instruments.

  6. FORMATION OF S-BEARING SPECIES BY VUV/EUV IRRADIATION OF H{sub 2}S-CONTAINING ICE MIXTURES: PHOTON ENERGY AND CARBON SOURCE EFFECTS

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Y.-J.; Juang, K.-J.; Qiu, J.-M.; Chu, C.-C.; Yih, T.-S. [Department of Physics, National Central University, Jhongli City, Taoyuan County 32054, Taiwan (China); Nuevo, M. [NASA Ames Research Center, Moffett Field, CA 94035 (United States); Jiménez-Escobar, A.; Muñoz Caro, G. M. [Centro de Astrobiología, INTA-CSIC, Torrejón de Ardoz, E-28850 Madrid (Spain); Wu, C.-Y. R. [Space Sciences Center and Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-1341 (United States); Fung, H.-S. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Ip, W.-H. [Graduate Institute of Astronomy, National Central University, Jhongli City, Taoyuan County 32049, Taiwan (China)

    2015-01-10

    Carbonyl sulfide (OCS) is a key molecule in astrobiology that acts as a catalyst in peptide synthesis by coupling amino acids. Experimental studies suggest that hydrogen sulfide (H{sub 2}S), a precursor of OCS, could be present in astrophysical environments. In the present study, we used a microwave-discharge hydrogen-flow lamp, simulating the interstellar UV field, and a monochromatic synchrotron light beam to irradiate CO:H{sub 2}S and CO{sub 2}:H{sub 2}S ice mixtures at 14 K with vacuum ultraviolet (VUV) or extreme ultraviolet (EUV) photons in order to study the effect of the photon energy and carbon source on the formation mechanisms and production yields of S-containing products (CS{sub 2}, OCS, SO{sub 2}, etc.). Results show that (1) the photo-induced OCS production efficiency in CO:H{sub 2}S ice mixtures is higher than that of CO{sub 2}:H{sub 2}S ice mixtures; (2) a lower concentration of H{sub 2}S enhances the production efficiency of OCS in both ice mixtures; and (3) the formation pathways of CS{sub 2} differ significantly upon VUV and EUV irradiations. Furthermore, CS{sub 2} was produced only after VUV photoprocessing of CO:H{sub 2}S ices, while the VUV-induced production of SO{sub 2} occurred only in CO{sub 2}:H{sub 2}S ice mixtures. More generally, the production yields of OCS, H{sub 2}S{sub 2}, and CS{sub 2} were studied as a function of the irradiation photon energy. Heavy S-bearing compounds were also observed using mass spectrometry during the warm-up of VUV/EUV-irradiated CO:H{sub 2}S ice mixtures. The presence of S-polymers in dust grains may account for the missing sulfur in dense clouds and circumstellar environments.

  7. FORMATION OF S-BEARING SPECIES BY VUV/EUV IRRADIATION OF H2S-CONTAINING ICE MIXTURES: PHOTON ENERGY AND CARBON SOURCE EFFECTS

    International Nuclear Information System (INIS)

    Chen, Y.-J.; Juang, K.-J.; Qiu, J.-M.; Chu, C.-C.; Yih, T.-S.; Nuevo, M.; Jiménez-Escobar, A.; Muñoz Caro, G. M.; Wu, C.-Y. R.; Fung, H.-S.; Ip, W.-H.

    2015-01-01

    Carbonyl sulfide (OCS) is a key molecule in astrobiology that acts as a catalyst in peptide synthesis by coupling amino acids. Experimental studies suggest that hydrogen sulfide (H 2 S), a precursor of OCS, could be present in astrophysical environments. In the present study, we used a microwave-discharge hydrogen-flow lamp, simulating the interstellar UV field, and a monochromatic synchrotron light beam to irradiate CO:H 2 S and CO 2 :H 2 S ice mixtures at 14 K with vacuum ultraviolet (VUV) or extreme ultraviolet (EUV) photons in order to study the effect of the photon energy and carbon source on the formation mechanisms and production yields of S-containing products (CS 2 , OCS, SO 2 , etc.). Results show that (1) the photo-induced OCS production efficiency in CO:H 2 S ice mixtures is higher than that of CO 2 :H 2 S ice mixtures; (2) a lower concentration of H 2 S enhances the production efficiency of OCS in both ice mixtures; and (3) the formation pathways of CS 2 differ significantly upon VUV and EUV irradiations. Furthermore, CS 2 was produced only after VUV photoprocessing of CO:H 2 S ices, while the VUV-induced production of SO 2 occurred only in CO 2 :H 2 S ice mixtures. More generally, the production yields of OCS, H 2 S 2 , and CS 2 were studied as a function of the irradiation photon energy. Heavy S-bearing compounds were also observed using mass spectrometry during the warm-up of VUV/EUV-irradiated CO:H 2 S ice mixtures. The presence of S-polymers in dust grains may account for the missing sulfur in dense clouds and circumstellar environments

  8. Evaluating EUV mask pattern imaging with two EUV microscopes

    International Nuclear Information System (INIS)

    Goldberg, Kenneth A.; Takase, Kei; Naulleau, Patrick P.; Han, Hakseung; Barty, Anton; Kinoshita, Hiroo; Hamamoto, Kazuhiro

    2008-01-01

    Aerial image measurement plays a key role in the development of patterned reticles for each generation of lithography. Studying the field transmitted (reflected) from EUV masks provides detailed information about potential disruptions caused by mask defects, and the performance of defect repair strategies, without the complications of photoresist imaging. Furthermore, by measuring the continuously varying intensity distribution instead of a thresholded, binary resist image, aerial image measurement can be used as feedback to improve mask and lithography system modeling methods. Interest in EUV, at-wavelength, aerial image measurement lead to the creation of several research tools worldwide. These tools are used in advanced mask development work, and in the evaluation of the need for commercial at-wavelength inspection tools. They describe performance measurements of two such tools, inspecting the same EUV mask in a series of benchmarking tests that includes brightfield and darkfield patterns. One tool is the SEMATECH Berkeley Actinic Inspection Tool (AIT) operating on a bending magnet beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. The AIT features an EUV Fresnel zoneplate microscope that emulates the numerical aperture of a 0.25-NA stepper, and projects the aerial image directly onto a CCD camera, with 700x magnification. The second tool is an EUV microscope (EUVM) operating at the NewSUBARU synchrotron in Hyogo, Japan. The NewSUBARU tool projects the aerial image using a reflective, 30x Schwarzschild objective lens, followed by a 10-200x x-ray zooming tube. The illumination conditions and the imaging etendue are different for the two tools. The benchmarking measurements were used to determine many imaging and performance properties of the tools, including resolution, modulation transfer function (MTF), aberration magnitude, aberration field-dependence (including focal-plane tilt), illumination uniformity, line-edge roughness, and flare

  9. Low-k films modification under EUV and VUV radiation

    International Nuclear Information System (INIS)

    Rakhimova, T V; Rakhimov, A T; Mankelevich, Yu A; Lopaev, D V; Kovalev, A S; Vasil'eva, A N; Zyryanov, S M; Kurchikov, K; Proshina, O V; Voloshin, D G; Novikova, N N; Krishtab, M B; Baklanov, M R

    2014-01-01

    Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum ultraviolet (VUV) emission with 13.5, 58.4, 106, 147 and 193 nm wavelengths and fluences up to 6 × 10 18  photons cm −2 is studied experimentally and theoretically to reveal the damage mechanism and the most ‘damaging’ spectral region. Organosilicate glass (OSG) and organic low-k films with k-values of 1.8–2.5 and porosity of 24–51% are used in these experiments. The Si–CH 3 bonds depletion is used as a criterion of VUV damage of OSG low-k films. It is shown that the low-k damage is described by two fundamental parameters: photoabsorption (PA) cross-section σ PA and effective quantum yield φ of Si–CH 3 photodissociation. The obtained σ PA and φ values demonstrate that the effect of wavelength is defined by light absorption spectra, which in OSG materials is similar to fused silica. This is the reason why VUV light in the range of ∼58–106 nm having the highest PA cross-sections causes strong Si–CH 3 depletion only in the top part of the films (∼50–100 nm). The deepest damage is observed after exposure to 147 nm VUV light since this emission is located at the edge of Si–O absorption, has the smallest PA cross-section and provides extensive Si–CH 3 depletion over the whole film thickness. The effective quantum yield slowly increases with the increasing porosity but starts to grow quickly when the porosity exceeds the critical threshold located close to a porosity of ∼50%. The high degree of pore interconnectivity of these films allows easy movement of the detached methyl radicals. The obtained results have a fundamental character and can be used for prediction of ULK material damage under VUV light with different wavelengths. (paper)

  10. Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

    Science.gov (United States)

    Huang, Qiushi; Medvedev, Viacheslav; van de Kruijs, Robbert; Yakshin, Andrey; Louis, Eric; Bijkerk, Fred

    2017-03-01

    Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV experiments. Both planar and three dimensional multilayer structures have been developed to tailor the spectral response in a wide wavelength range. For the planar multilayer optics, different layered schemes are explored. Stacks of periodic multilayers and capping layers are demonstrated to achieve multi-channel reflection or suppression of the reflective properties. Aperiodic multilayer structures enable broadband reflection both in angles and wavelengths, with the possibility of polarization control. The broad wavelength band multilayer is also used to shape attosecond pulses for the study of ultrafast phenomena. Narrowband multilayer monochromators are delivered to bridge the resolution gap between crystals and regular multilayers. High spectral purity multilayers with innovated anti-reflection structures are shown to select spectrally clean XUV radiation from broadband X-ray sources, especially the plasma sources for EUV lithography. Significant progress is also made in the three dimensional multilayer optics, i.e., combining micro- and nanostructures with multilayers, in order to provide new freedom to tune the spectral response. Several kinds of multilayer gratings, including multilayer coated gratings, sliced multilayer gratings, and lamellar multilayer gratings are being pursued for high resolution and high efficiency XUV spectrometers/monochromators, with their advantages and disadvantages, respectively. Multilayer diffraction optics are also developed for spectral purity enhancement. New structures like gratings, zone plates, and pyramids that obtain full suppression of the unwanted radiation and high XUV reflectance are reviewed. Based on the present achievement

  11. Temperature and EUV Intensity in a Coronal Prominence Cavity and Streamer

    Science.gov (United States)

    Kucera, T. A.; Gibson, S.E.; Schmit, D. J.; Landi, E.; Tripathi, D.

    2012-01-01

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 Aug. 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model prediction of the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) MK4. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the line intensities by a factor of 4-10, while overestimating pB data by no more than a factor of 1.4. One possible explanation for this is that there may be a significant amount of material at temperatures outside of the range log T(K) approximately equals 5.8 - 6.7 in both the cavity and the streamer.

  12. Simultaneous EUV and radio observations of bidirectional plasmoids ejection during magnetic reconnection

    Science.gov (United States)

    Kumar, Pankaj; Cho, Kyung-Suk

    2013-09-01

    We present a multiwavelength study of the X-class flare, which occurred in active region (AR) NOAA 11339 on 3 November 2011. The extreme ultraviolet (EUV) images recorded by SDO/AIA show the activation of a remote filament (located north of the AR) with footpoint brightenings about 50 min prior to the flare's occurrence. The kinked filament rises up slowly, and after reaching a projected height of ~49 Mm, it bends and falls freely near the AR, where the X-class flare was triggered. Dynamic radio spectrum from the Green Bank Solar Radio Burst Spectrometer (GBSRBS) shows simultaneous detection of both positive and negative drifting pulsating structures (DPSs) in the decimetric radio frequencies (500-1200 MHz) during the impulsive phase of the flare. The global negative DPSs in solar flares are generally interpreted as a signature of electron acceleration related to the upward-moving plasmoids in the solar corona. The EUV images from AIA 94 Å reveal the ejection of multiple plasmoids, which move simultaneously upward and downward in the corona during the magnetic reconnection. The estimated speeds of the upward- and downward-moving plasmoids are ~152-362 and ~83-254 km s-1, respectively. These observations strongly support the recent numerical simulations of the formation and interaction of multiple plasmoids due to tearing of the current-sheet structure. On the basis of our analysis, we suggest that the simultaneous detection of both the negative and positive DPSs is most likely generated by the interaction or coalescence of the multiple plasmoids moving upward and downward along the current-sheet structure during the magnetic reconnection process. Moreover, the differential emission measure (DEM) analysis of the active region reveals a hot flux-rope structure (visible in AIA 131 and 94 Å) prior to the flare initiation and ejection of the multitemperature plasmoids during the flare impulsive phase. Movie is available in electronic form at http://www.aanda.org

  13. A proposed new method for the determination of the solar irradiance at EUV wavelength range

    Science.gov (United States)

    Feldman, Uri; Doschek, G. A.; Seely, J. F.; Landi, E.; Dammasch, I.

    The solar irradiance in the far ultraviolet (FUV) and extreme ultraviolet (EUV) and its time variability are important inputs to geospace models. It provides the primary mechanism for heating the earth's upper atmosphere and creating the ionosphere. Understanding various space weather phenomena requires reliable detailed knowledge of the solar EUV irradiance. Ideally one would like to have a single well-calibrated, high-resolution spectrometer that can continuously monitor the solar irradiance over the relevant wavelengths range. Since this is much too difficult to accomplish, a number of monitoring instruments were constructed in the past, each covering a fraction of the required wavelength range. Assembling solar irradiance from measurements by a number of instruments is extremely difficult and is usually plagued by large uncertainties. To overcome some of the difficulties resulting from such procedures, empirical models have been developed that rely in large part on solar activity levels as proxies. In recent years a different approach has been established for the determination of the solar irradiance, an approach independent of irradiance observations. The new approach is based on the line intensities calculated from emission measure (EM) distributions across the solar surface. The EM distributions are derived from spatially and spectrally resolved measurements of line intensities and describe the temperature and density structure of the basic large scale features of the solar atmosphere, specifically coronal holes, quiet Sun, and active regions. Recently, as a result of detailed analysis of solar upper atmosphere (SUA) spectra recorded by SUMER/SoHO it was discovered that, in contrast to earlier beliefs, the solar EM in 3x105 -4x106 K plasmas does not appear to vary continuously with temperature as previously assumed. Instead it appears to be composed of isothermal structures where each can attain but one of the following four main temperatures: 5x105 , 9x105

  14. Contrast matching of line gratings obtained with NXE3XXX and EUV- interference lithography

    Science.gov (United States)

    Tasdemir, Zuhal; Mochi, Iacopo; Olvera, Karen Garrido; Meeuwissen, Marieke; Yildirim, Oktay; Custers, Rolf; Hoefnagels, Rik; Rispens, Gijsbert; Fallica, Roberto; Vockenhuber, Michaela; Ekinci, Yasin

    2017-10-01

    Extreme UV lithography (EUVL) has gained considerable attention for several decades as a potential technology for the semiconductor industry and it is now close to being adopted in high-volume manufacturing. At Paul Scherrer Institute (PSI), we have focused our attention on EUV resist performance issues by testing available high-performance EUV resists in the framework of a joint collaboration with ASML. For this purpose, we use the grating-based EUV-IL setup installed at the Swiss Light Source (SLS) at PSI, in which a coherent beam with 13.5 nm wavelength is used to produce a periodic aerial image with virtually 100% contrast and large depth of focus. Interference lithography is a relatively simple technique and it does not require many optical components, therefore the unintended flare is minimized and the aerial image is well-defined sinusoidal pattern. For the collaborative work between PSI and ASML, exposures are being performed on the EUV-IL exposure tool at PSI. For better quantitative comparison to the NXE scanner results, it is targeted to determine the actual NILS of the EUV-IL exposure tool at PSI. Ultimately, any resist-related metrology must be aligned and compared with the performance of EUV scanners. Moreover, EUV-IL is a powerful method for evaluating the resist performance and a resist which performs well with EUV-IL, shows, in general, also good performance with NXE scanners. However, a quantitative prediction of the performance based on EUV-IL measurements has not been possible due to the differences in aerial image formation. In this work, we aim to study the performance of EUV resists with different aerial images. For this purpose, after the real interference pattern exposure, we overlay a flat field exposure to emulate different levels of contrast. Finally, the results are compared with data obtained from EUV scanner. This study will enable not only match the data obtained from EUV- IL at PSI with the performance of NXE scanners, but also a

  15. Overcoming etch challenges related to EUV based patterning (Conference Presentation)

    Science.gov (United States)

    Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

    2017-04-01

    Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

  16. Surface modification of organic polymer by dual action of extreme ultraviolet/visible-near infrared ultrashort pulses

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; Polan, Jiří; Homer, Pavel; Jakubczak, Krzysztof; Rus, Bedřich; Kim, I. J.; Kim, C. M.; Lee, G.H.; Nam, C. H.; Hájková, Věra; Chalupský, Jaromír; Juha, Libor

    2009-01-01

    Roč. 105, č. 2 (2009), 026105/1-026105/3 ISSN 0021-8979 R&D Projects: GA AV ČR KAN300100702; GA MŠk(CZ) LC528; GA MŠk LA08024; GA ČR GC202/07/J008 Institutional research plan: CEZ:AV0Z10100523 Keywords : high-speed optical techniques * polymers * surface structure * ultraviolet radiation effects Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.072, year: 2009

  17. Extreme-UV electrical discharge source

    Science.gov (United States)

    Fornaciari, Neal R.; Nygren, Richard E.; Ulrickson, Michael A.

    2002-01-01

    An extreme ultraviolet and soft x-ray radiation electric capillary discharge source that includes a boron nitride housing defining a capillary bore that is positioned between two electrodes one of which is connected to a source of electric potential can generate a high EUV and soft x-ray radiation flux from the capillary bore outlet with minimal debris. The electrode that is positioned adjacent the capillary bore outlet is typically grounded. Pyrolytic boron nitride, highly oriented pyrolytic boron nitride, and cubic boron nitride are particularly suited. The boron nitride capillary bore can be configured as an insert that is encased in an exterior housing that is constructed of a thermally conductive material. Positioning the ground electrode sufficiently close to the capillary bore outlet also reduces bore erosion.

  18. EUV properties of two diffraction gratings

    International Nuclear Information System (INIS)

    Cotton, D.; Chakrabarti, S.; Edelstein, J.; Pranke, J.; Christensen, A.B.

    1988-01-01

    The efficiency and scattering characteristics of a mechanically ruled grating (MRG) and a holographically ruled grating (HRG) are presented. One of these gratings will be employed in the Extreme Ultraviolet Spectrometer, an instrument of the Remote Atmospheric and Ionospheric Detector System to be flown aboard a TIROS satellite in 1991. The HRG showed much less Lyman alpha scattering, while the MRG had the better efficiency over most of the spectral range covered. 8 refs

  19. Study on the resistance of haloferax radiotolerans, an extreme Halophilic archaebacterium from Uromia lake against ultraviolet (UV) light and 60Co gamma-rays

    International Nuclear Information System (INIS)

    Asgarni, E.; Shirzad, M.; Soudi, M. R.; Shahmohammadi, H. R.; Falsafi, T.

    2006-01-01

    In this work, the capacity of an extreme halophilic archaebacterium, isolated from Uromia lake, Haloferax radiotolerans to withstand the lethal effects of ultraviolet light (UV),and 60 Co r-rays has been studied. The resistibility of this organism against the DNA-damaging agents was evaluated by calculating of the survival fractions at different dose rates of W and 60 Co r-rays radiations and compared with those of Escherichia coli B/r (a radioresistant strain of E. coli). D 37 values for Haloferax radiotolerans and E. coli B/r were 23 1, and 9 J/m 2 , respectively, by exposure to the UV light. They were 645, and 99 Gy, respectively, by exposure to 60 Co r-rays. Against these agents, Haloferax radiotolerans shows much more resistance compare to that of E. coli B/r. This is categorized as the first report of resistibility in the member of Archaea

  20. Harmonium: A pulse preserving source of monochromatic extreme ultraviolet (30–110 eV radiation for ultrafast photoelectron spectroscopy of liquids

    Directory of Open Access Journals (Sweden)

    J. Ojeda

    2016-03-01

    Full Text Available A tuneable repetition rate extreme ultraviolet source (Harmonium for time resolved photoelectron spectroscopy of liquids is presented. High harmonic generation produces 30–110 eV photons, with fluxes ranging from ∼2 × 1011 photons/s at 36 eV to ∼2 × 108 photons/s at 100 eV. Four different gratings in a time-preserving grating monochromator provide either high energy resolution (0.2 eV or high temporal resolution (40 fs between 30 and 110 eV. Laser assisted photoemission was used to measure the temporal response of the system. Vibrational progressions in gas phase water were measured demonstrating the ∼0.2 eV energy resolution.

  1. Prospects of DUV OoB suppression techniques in EUV lithography

    Science.gov (United States)

    Park, Chang-Min; Kim, Insung; Kim, Sang-Hyun; Kim, Dong-Wan; Hwang, Myung-Soo; Kang, Soon-Nam; Park, Cheolhong; Kim, Hyun-Woo; Yeo, Jeong-Ho; Kim, Seong-Sue

    2014-04-01

    Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor's requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are identified as risks for CDU and Overlay: Infrared (IR) and deep ultraviolet (DUV) out of band (OOB) radiations from laser produced plasma (LPP) EUV source. IR from plasma generating CO2 laser that causes optics heating and wafer overlay error is well suppressed by introducing grating on collector to diffract IR off the optical axis and is the effect has been confirmed by operation of pre-production tool (NXE3100). EUV and DUV OOB which are reflected from mask black boarder (BB) are root causes of EUV-specific CD error at the boundaries of exposed shots which would result in the problem of CDU out of spec unless sufficiently suppressed. Therefore, control of DUV OOB reflection from the mask BB is one of the key technologies that must be developed prior to EUV mass production. In this paper, quantitative assessment on the advantage and the disadvantage of potential OOB solutions will be discussed. EUV and DUV OOB impacts on wafer CDs are measured from NXE3100 & NXE3300 experiments. Significant increase of DUV OOB impact on CD from NXE3300 compared with NXE3100 is observed. There are three ways of technology being developed to suppress DUV OOB: spectral purity filter (SPF) as a scanner solution, multi-layer etching as a solution on mask, and resist top-coating as a process solution. PROs and CONs of on-scanner, on-mask, and on-resist solution for the mass production of EUV lithography will be discussed.

  2. Configuration interaction calculations and excitation rates of X-ray and EUV transitions in sulfurlike manganese

    Energy Technology Data Exchange (ETDEWEB)

    El-Maaref, A.A., E-mail: ahmed.maaref@azhar.edu.eg; Saddeek, Y.B.; Abou halaka, M.M.

    2017-02-15

    Highlights: • Fine-structure calculations of sulfurlike Mn have been performed using configuration interaction technique, CI. • The relativistic effects, Breit-Pauli Hameltonian, have been correlated to the CI calculations. • Excitation rates by electron impact of the Mn X ion have been evaluated up to ionization potential. - Abstract: Fine-structure calculations of energies and transition parameters have been performed using the configuration interaction technique (CI) as implemented in CIV3 code for sulfurlike manganese, Mn X. The calculations are executed in an intermediate coupling scheme using the Breit-Pauli Hamiltonian. As well as, energy levels and oscillator strengths are calculated using LANL code, where the calculations by LANL have been used to estimate the accuracy of the present CI calculations. The calculated energy levels, oscillator strengths, and lifetimes are in reasonable agreement with the published experimental and theoretical values. Electron impact excitation rates of the transitions emit soft X-ray and extreme ultraviolet (EUV) wavelengths have been evaluated. The level population densities are calculated using the collisional radiative model (CRM), as well. The collisional excitation rates and collision strengths have been calculated in the electron temperature range ≤ the ionization potential, ∼1–250 eV.

  3. Atomic structure calculations and identification of EUV and SXR spectral lines in Sr XXX

    Science.gov (United States)

    Goyal, Arun; Khatri, Indu; Aggarwal, Sunny; Singh, A. K.; Mohan, Man

    2015-08-01

    We report an extensive theoretical study of atomic data for Sr XXX in a wide range with L-shell electron excitations to the M-shell. We have calculated energy levels, wave-function compositions and lifetimes for lowest 113 fine structure levels and wavelengths of an extreme Ultraviolet (EUV) and soft X-ray (SXR) transitions. We have employed multi-configuration Dirac Fock method (MCDF) approach within the framework of Dirac-Coulomb Hamiltonian including quantum electrodynamics (QED) and Breit corrections. We have also presented the radiative data for electric and magnetic dipole (E1, M1) and quadrupole (E2, M2) transitions from the ground state. We have made comparisons with available energy levels compiled by NIST and achieve good agreement. But due to inadequate data in the literature, analogous relativistic distorted wave calculations have also been performed using flexible atomic code (FAC) to assess the reliability and accuracy of our results. Additionally, we have provided new atomic data for Sr XXX which is not published elsewhere in the literature and we believe that our results may be beneficial in fusion plasma research and astrophysical investigations and applications.

  4. Analyses of the Sn IX-Sn XII spectra in the EUV region

    International Nuclear Information System (INIS)

    Churilov, S S; Ryabtsev, A N

    2006-01-01

    The Sn IX-Sn XII spectra excited in a vacuum spark have been analysed in the 130-160 A wavelength region. The analysis was based on the energy parameter extrapolation in the isonuclear Sn VI-VIII and Sn XIII-XIV sequence. 266 spectral lines belonging to the 4d m -(4d m-1 4f+4p 5 4d m+1 ) (m=6-3) transition arrays were classified in the Sn IX-Sn XII spectra for the first time. All 18 level energies of the 4d 3 configuration and 39 level energies of the strongly interacting 4d 2 4f and 4p 5 4d 4 configurations were established in the Sn XII spectrum. The energy differences between the majority of the 4d m levels and about 40 levels of the 4d m-1 4f+4p 5 4d m+1 configurations were determined in each of the Sn IX, Sn X and Sn XI spectra (m=6-4). As a result, all intense lines were classified in the 130-140 A region relevant to the extreme ultraviolet (EUV) lithography. It was shown that the most of the intense lines in the 2% bandwidth at 135 A belong to the transitions in the Sn XI-Sn XIII spectra

  5. Microbial survival of space vacuum and extreme ultraviolet irradiation: strain isolation and analysis during a rocket flight.

    Science.gov (United States)

    Saffary, Roya; Nandakumar, Renu; Spencer, Dennis; Robb, Frank T; Davila, Joseph M; Swartz, Marvin; Ofman, Leon; Thomas, Roger J; DiRuggiero, Jocelyne

    2002-09-24

    We have recovered new isolates from hot springs, in Yellowstone National Park and the Kamchatka Peninsula, after gamma-irradiation and exposure to high vacuum (10(-6) Pa) of the water and sediment samples. The resistance to desiccation and ionizing radiation of one of the isolates, Bacillus sp. strain PS3D, was compared to that of the mesophilic bacterium, Deinococcus radiodurans, a species well known for its extraordinary resistance to desiccation and high doses of ionizing radiation. Survival of these two microorganisms was determined in real and simulated space conditions, including exposure to extreme UV radiation (10-100 nm) during a rocket flight. We found that up to 15 days of desiccation alone had little effect on the viability of either bacterium. In contrast, exposure to space vacuum ( approximately 10(-6) Pa) decreased cell survival by two and four orders of magnitude for Bacillus sp. strain PS3D and D. radiodurans, respectively. Simultaneous exposure to space vacuum and extreme UV radiation further decreased the survival of both organisms, compared to unirradiated controls. This is the first report on the isolated effect of extreme UV at 30 nm on cell survival. Extreme UV can only be transmitted through high vacuum, therefore its penetration into the cells may only be superficial, suggesting that in contrast to near UV, membrane proteins rather than DNA were damaged by the radiation.

  6. INTERACTION OF LASER RADIATION WITH MATTER. LASER PLASMA High-power EUV (13.5 nm) light source

    Science.gov (United States)

    Borisov, Vladimir M.; Borisova, Galina N.; Vinokhodov, Aleksandr Yu; Zakharov, S. V.; Ivanov, Aleksandr S.; Kiryukhin, Yurii B.; Mishchenko, Valentin A.; Prokof'ev, Aleksandr V.; Khristoforov, Oleg B.

    2010-10-01

    Characteristics of a discharge-produced plasma (DPP) light source in the spectral band 13.5±0.135 nm, developed for Extreme Ultra Violet (EUV) lithography, are presented. EUV light is generated by DPP in tin vapour formed between rotating disk electrodes. The discharge is ignited by a focused laser beam. The EUV power 1000 W/(2π sr) in the spectral band 13.5±0.135 nm was achieved with input power about of ~63 kW to the plasma at a pulse repetition rate ~7 kHz . The results of numerical simulation are compared with the experimental data.

  7. Injection of harmonics generated in gas in a free-electron laser providing intense and coherent extreme-ultraviolet light

    Energy Technology Data Exchange (ETDEWEB)

    Lambert, G; Garzella, D; Labat, M; Carre, B; Bougeard, M; Salieres, P; Merdji, H; Gobert, O [CEA Saclay, DSM, DRECAM, Serv. Photons Atomes Mol., F-91191 Gif sur Yvette, (France); Lambert, G; Hara, T; Tanikawa, T; Kitamura, H; Shintake, T; Tanaka, Y; Tahara, K [RIKEN SPring Centre, Harima Inst., Hyogo 679-5148, (Japan); Lambert, G; Labat, M; Chubar, O; Couprie, M E [Groupe Magnetisme et Insertion, Synchrotron Soleil, F-91192 Gif sur Yvette, (France); Hara, T; Kitamura, H; Shintake, T; Inoue, S; Tanaka, Y [XFEL Project Head Office, RIKEN, Hyogo 679-5148, (Japan)

    2008-07-01

    Conventional synchrotron radiation sources enable the structure of matter to be studied at near-atomic spatial resolution and picosecond temporal resolution. Free-electron lasers promise to extend this down to femtosecond timescales. The process by which free-electron lasers amplify synchrotron light-known as self-amplified spontaneous emission - is only partially temporally coherent, but this can be improved by seeding it with an external laser. Here we explore the use of seed light produced by high-order harmonic generation in a gas, covering wavelengths from the ultraviolet to soft X-rays. Using the SPring-8 Compact SASE Source test accelerator, we demonstrate an increase of three orders of magnitude in the intensity of the fundamental radiation at 160 nm, halving of the free-electron laser saturation length, and the generation of nonlinear harmonics at 54 nm and 32 nm. The low seed level used in this demonstration suggests that nonlinear harmonic schemes should enable the generation of fully coherent soft X-rays at wavelengths down to the so-called 'water window', vital for the study of biological samples. (authors)

  8. The absolute photoionization cross sections of helium, neon, argon and krypton in the extreme vacuum ultraviolet region of the spectrum

    International Nuclear Information System (INIS)

    West, J.B.; Marr, G.V.

    1976-01-01

    An experiment has been set up at the Daresbury Synchrotron Radiation Facility to make absolute absorption cross section measurements over a wide range of photon energies. New data are reported for helium, neon, argon and krypton over the range 340 to 40 A which are believed to be reliable to +- 5%. A critical evaluation of published cross section data has been carried out to produce best value data from the ionization thresholds throughout the vacuum ultraviolet and x-ray region. Agreement with theoretical calculations on helium is demonstrated to be within +- 2 to 3% from threshold down to the double ionization threshold at 79 eV. Comparison with recent calculations of photoionization cross sections has shown that the effect of electron correlations is significant for the heavier inert gases. Contrary to previous claims, the position of the M shell maximum in krypton is located at 184 +- 10 eV in good agreement with r.p.a.e. calculations. Oscillator strength sum rules have been examined and their moments calculated. Discrepancies developing towards the heavier inert gases suggests a decrease in polarizabilities and other atomic factors from those predicted by Hartree-Fock calculations. (author)

  9. Reply to “Comment on ‘Ultrafast Demagnetization Measurements Using Extreme Ultraviolet Light: Comparison of Electronic and Magnetic Contributions’ ”

    Directory of Open Access Journals (Sweden)

    Emrah Turgut

    2013-09-01

    Full Text Available In the following, we show that the conclusions of our article titled “Ultrafast Demagnetization Measurements Using Extreme Ultraviolet Light: Comparison of Electronic and Magnetic Contributions” are correct. The Comment of Vodungbo et al. argues that a unique determination of the refractive index variation over time is not possible using the data set presented in our paper. Furthermore, it was suggested that the lack of uniqueness allows for the possibility of a very specific time-dependent trajectory of the refractive index in the complex plane that could give rise to a large nonmagnetic modulation of the measured asymmetry, in spite of a negligible change in the s-polarized reflectivity. In this Reply, we conclusively show that any nonmagnetic contribution to the measured asymmetry is indeed negligible (<2%, below the noise level of the magnetic-asymmetry measurements. First, we use a few additional measurements to unambiguously rule out the presence of any nonmagnetic contributions to the signal. Second, we show that the scenario proposed by Vodungbo et al. would require both exotic time and energy dependences of the refractive index near the M edge that are extremely unlikely (virtually impossible in real materials. Thus, the conclusions of our original article are preserved.

  10. Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

    Science.gov (United States)

    Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

    2011-11-01

    Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle

  11. Studies of EUV contamination mitigation

    Science.gov (United States)

    Graham, Samual, Jr.; Malinowski, Michael E.; Steinhaus, Chip; Grunow, Philip A.; Klebanoff, Leonard E.

    2002-07-01

    Carbon contamination removal was investigated using remote RF-O2, RF-H2, and atomic hydrogen experiments. Samples consisted of silicon wafers coated with 100 Angstrom sputtered carbon, as well as bare Si-capped Mo/Si optics. Samples were exposed to atomic hydrogen or RF plasma discharges at 100 W, 200 W, and 300 W. Carbon removal rate, optic oxidation rate, at-wavelength (13.4 nm) peak reflectance, and optic surface roughness were characterized. Data show that RF- O2 removes carbon at a rate approximately 6 times faster RF- H2 for a given discharge power. However, both cleaning techniques induce Mo/Si optic degradation through the loss of reflectivity associated with surface oxide growth for RF-O2 and an unknown mechanism with hydrogen cleaning. Atomic hydrogen cleaning shows carbon removal rates sufficient for use as an in-situ cleaning strategy for EUVoptics with less risk of optic degradation from overexposures than RF-discharge cleaning. While hydrogen cleaning (RF and atomic) of EUV optics has proven effective in carbon removal, attempts to dissociate hydrogen in co-exposures with EUV radiation have resulted in no detectable removal of carbon contamination.

  12. Remote Sensing of the Upper Atmosphere and the Ionosphere in the Extreme and Far Ultraviolet: Results from the LITES Experiment aboard the IS

    Science.gov (United States)

    Finn, S. C.; Chakrabarti, S.; Stephan, A. W.; Geddes, G.; Budzien, S. A.; Cook, T.; Aryal, S.; Martel, J.; Galkin, I. A.; Erickson, P. J.

    2017-12-01

    The Limb-Imaging Ionospheric and Thermospheric Extreme-ultraviolet Spectrograph (LITES) was launched as part of the Space Test Program Houston #5 (STP-H5) payload aboard a commercial resupply flight on February 19, 2017 and was subsequently installed on the International Space Station (ISS). LITES is an imaging spectrograph that spans the 60 - 140 nm wavelength range at 1 nm spectral resolution and samples tangent altitudes 150 - 350 km with 0.2° angular resolution. LITES, in combination with the GPS Radio Occultation and Ultraviolet Photometry - Colocated (GROUP-C) experiment, which includes a GPS receiver and a nadir viewing 135.6 nm photometer, jointly collect new information on the thermosphere and the ionosphere using simultaneous UV and radio emissions. LITES, which uses standard stars to perform in-flight calibration, observes altitude profiles of day and night airglow emissions that are being used to infer thermospheric and ionospheric density profiles. Furthermore, due to the inclination of the ISS, LITES has also observed auroral spectrum and their altitude and spatial variations. Finally, geomagnetic storm effects on its UV emissions can be used to remotely sense their effects on the upper atmospheric morphology. These ISS observations,which are complement to the upcoming ICON and GOLD NASA missions, are focused on ionosphere-atmosphere coupling and global-scale atmospheric response to space weather observed from higher altitudes . We will present an overview of the LITES instrument, some early results from the first few months of operations. We will also summarize the advantages in calibration and validation activities that are possible through space-based LITES, GROUP-C and stellar measurements and simultaneous ground-based optical and radar observations.

  13. Temporal variations of electron density and temperature in Kr/Ne/H2 photoionized plasma induced by nanosecond pulses from extreme ultraviolet source

    Science.gov (United States)

    Saber, I.; Bartnik, A.; Wachulak, P.; Skrzeczanowski, W.; Jarocki, R.; Fiedorowicz, H.

    2017-06-01

    Spectral investigations of low-temperature photoionized plasmas created in a Kr/Ne/H2 gas mixture were performed. The low-temperature plasmas were generated by gas mixture irradiation using extreme ultraviolet pulses from a laser-plasma source. Emission spectra in the ultraviolet/visible range from the photoionized plasmas contained lines that mainly corresponded to neutral atoms and singly charged ions. Temporal variations in the plasma electron temperature and electron density were studied using different characteristic emission lines at various delay times. Results, based on Kr II lines, showed that the electron temperature decreased from 1.7 to 0.9 eV. The electron densities were estimated using different spectral lines at each delay time. In general, except for the Hβ line, in which the electron density decreased from 3.78 × 1016 cm-3 at 200 ns to 5.77 × 1015 cm-3 at 2000 ns, most of the electron density values measured from the different lines were of the order of 1015 cm-3 and decreased slightly while maintaining the same order when the delay time increased. The time dependences of the measured and simulated intensities of a spectral line of interest were also investigated. The validity of the partial or full local thermodynamic equilibrium (LTE) conditions in plasma was explained based on time-resolved electron density measurements. The partial LTE condition was satisfied for delay times in the 200 ns to 1500 ns range. The results are summarized, and the dominant basic atomic processes in the gas mixture photoionized plasma are discussed.

  14. Towards a contamination-tolerant EUV power sensor

    NARCIS (Netherlands)

    Veldhoven, J. van; Putten, M. van; Nieuwkoop, E.; Huijser, T.; Maas, D.J.

    2015-01-01

    In EUV Lithography short-, mid- and long-term control over in-band EUV power is needed for high-yield IC production. Existing sensors can be unstable over time due to contamination and/or degradation. TNO goal: to conceive a stable EUV power sensor. Sensitive to in-band EUV, negligible degradation,

  15. A study on EUV reticle surface molecular contamination under different storage conditions in a HVM foundry fab

    Science.gov (United States)

    Singh, SherJang; Yatzor, Brett; Taylor, Ron; Wood, Obert; Mangat, Pawitter

    2017-03-01

    The prospect of EUVL (Extreme Ultraviolet Lithography) insertion into HVM (High Volume Manufacturing) has never been this promising. As technology is prepared for "lab to fab" transition, it becomes important to comprehend challenges associated with integrating EUVL infrastructure within existing high volume chip fabrication processes in a foundry fab. The existing 193nm optical lithography process flow for reticle handling and storage in a fab atmosphere is well established and in-fab reticle contamination concerns are mitigated with the reticle pellicle. However EUVL reticle pellicle is still under development and if available, may only provide protection against particles but not molecular contamination. HVM fab atmosphere is known to be contaminated with trace amounts of AMC's (Atmospheric Molecular Contamination). If such contaminants are organic in nature and get absorbed on the reticle surface, EUV photon cause photo-dissociation resulting into carbon generation which is known to reduce multilayer reflectivity and also degrades exposure uniformity. Chemical diffusion and aggregation of other ions is also reported under the e-beam exposure of a EUV reticle which is known to cause haze issues in optical lithography. Therefore it becomes paramount to mitigate absorbed molecular contaminant concerns on EUVL reticle surface. In this paper, we have studied types of molecular contaminants that are absorbed on an EUVL reticle surface under HVM fab storage and handling conditions. Effect of storage conditions (gas purged vs atmospheric) in different storage pods (Dual pods, Reticle Clamshells) is evaluated. Absorption analysis is done both on ruthenium capping layer as well as TaBN absorber. Ru surface chemistry change as a result of storage is also studied. The efficacy of different reticle cleaning processes to remove absorbed contaminant is evaluated as well.

  16. Update on EUV radiometry at PTB

    Science.gov (United States)

    Laubis, Christian; Barboutis, Annett; Buchholz, Christian; Fischer, Andreas; Haase, Anton; Knorr, Florian; Mentzel, Heiko; Puls, Jana; Schönstedt, Anja; Sintschuk, Michael; Soltwisch, Victor; Stadelhoff, Christian; Scholze, Frank

    2016-03-01

    The development of technology infrastructure for EUV Lithography (EUVL) still requires higher levels of technology readiness in many fields. A large number of new materials will need to be introduced. For example, development of EUV compatible pellicles to adopt an approved method from optical lithography for EUVL needs completely new thin membranes which have not been available before. To support these developments, PTB with its decades of experience [1] in EUV metrology [2] provides a wide range of actinic and non actinic measurements at in-band EUV wavelengths as well as out of band. Two dedicated, complimentary EUV beamlines [3] are available for radiometric [4,5] characterizations benefiting from small divergence or from adjustable spot size respectively. The wavelength range covered reaches from below 1 nm to 45 nm [6] for the EUV beamlines [7] to longer wavelengths if in addition the VUV beamline is employed. The standard spot size is 1 mm by 1 mm with an option to go as low as 0.1 mm to 0.1 mm. A separate beamline offers an exposure setup. Exposure power levels of 20 W/cm2 have been employed in the past, lower fluencies are available by attenuation or out of focus exposure. Owing to a differential pumping stage, the sample can be held under defined gas conditions during exposure. We present an updated overview on our instrumentation and analysis capabilities for EUV metrology and provide data for illustration.

  17. EUV mask process specifics and development challenges

    Science.gov (United States)

    Nesladek, Pavel

    2014-07-01

    EUV lithography is currently the favorite and most promising candidate among the next generation lithography (NGL) technologies. Decade ago the NGL was supposed to be used for 45 nm technology node. Due to introduction of immersion 193nm lithography, double/triple patterning and further techniques, the 193 nm lithography capabilities was greatly improved, so it is expected to be used successfully depending on business decision of the end user down to 10 nm logic. Subsequent technology node will require EUV or DSA alternative technology. Manufacturing and especially process development for EUV technology requires significant number of unique processes, in several cases performed at dedicated tools. Currently several of these tools as e.g. EUV AIMS or actinic reflectometer are not available on site yet. The process development is done using external services /tools with impact on the single unit process development timeline and the uncertainty of the process performance estimation, therefore compromises in process development, caused by assumption about similarities between optical and EUV mask made in experiment planning and omitting of tests are further reasons for challenges to unit process development. Increased defect risk and uncertainty in process qualification are just two examples, which can impact mask quality / process development. The aim of this paper is to identify critical aspects of the EUV mask manufacturing with respect to defects on the mask with focus on mask cleaning and defect repair and discuss the impact of the EUV specific requirements on the experiments needed.

  18. Using synchrotron light to accelerate EUV resist and mask materials learning

    Science.gov (United States)

    Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Jones, Gideon; McClinton, Brittany; Miyakawa, Ryan; Mochi, Iacopo; Montgomery, Warren; Rekawa, Seno; Wallow, Tom

    2011-03-01

    As commercialization of extreme ultraviolet lithography (EUVL) progresses, direct industry activities are being focused on near term concerns. The question of long term extendibility of EUVL, however, remains crucial given the magnitude of the investments yet required to make EUVL a reality. Extendibility questions are best addressed using advanced research tools such as the SEMATECH Berkeley microfield exposure tool (MET) and actinic inspection tool (AIT). Utilizing Lawrence Berkeley National Laboratory's Advanced Light Source facility as the light source, these tools benefit from the unique properties of synchrotron light enabling research at nodes generations ahead of what is possible with commercial tools. The MET for example uses extremely bright undulator radiation to enable a lossless fully programmable coherence illuminator. Using such a system, resolution enhancing illuminations achieving k1 factors of 0.25 can readily be attained. Given the MET numerical aperture of 0.3, this translates to an ultimate resolution capability of 12 nm. Using such methods, the SEMATECH Berkeley MET has demonstrated resolution in resist to 16-nm half pitch and below in an imageable spin-on hard mask. At a half pitch of 16 nm, this material achieves a line-edge roughness of 2 nm with a correlation length of 6 nm. These new results demonstrate that the observed stall in ultimate resolution progress in chemically amplified resists is a materials issue rather than a tool limitation. With a resolution limit of 20-22 nm, the CAR champion from 2008 remains as the highest performing CAR tested to date. To enable continued advanced learning in EUV resists, SEMATECH has initiated a plan to implement a 0.5 NA microfield tool at the Advanced Light Source synchrotron facility. This tool will be capable of printing down to 8-nm half pitch.

  19. Photoionized plasmas induced in neon with extreme ultraviolet and soft X-ray pulses produced using low and high energy laser systems

    Czech Academy of Sciences Publication Activity Database

    Bartnik, A.; Wachulak, P.; Fok, T.; Wergrzynski, L.; Fiedorowicz, H.; Pisarczyk, T.; Chodukowski, T.; Kalinowska, Z.; Dudžák, Roman; Dostál, Jan; Krouský, Eduard; Skála, Jiří; Ullschmied, Jiří; Hřebíček, Jan; Medřík, Tomáš

    2015-01-01

    Roč. 22, č. 4 (2015), č. článku 043302. ISSN 1070-664X R&D Projects: GA MŠk LM2010014 Institutional support: RVO:61389021 Keywords : photoionized plasmas * laser plasma * EUV Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.207, year: 2015 http://scitation.aip.org/content/aip/journal/pop/22/4/10.1063/1.4919024

  20. A Long-Term Dissipation of the EUV He ii (30.4 nm) Segmentation in Full-Disk Solar Images

    Science.gov (United States)

    Didkovsky, Leonid

    2018-06-01

    Some quiet-Sun days observed by the Atmospheric Imaging Assembly (AIA) on-board the Solar Dynamics Observatory (SDO) during the time interval in 2010 - 2017 were used to continue our previous analyses reported by Didkovsky and Gurman ( Solar Phys. 289, 153, 2014a) and Didkovsky, Wieman, and Korogodina ( Solar Phys. 292, 32, 2017). The analysis consists of determining and comparing spatial spectral ratios (spectral densities over some time interval) from spatial (segmentation-cell length) power spectra. The ratios were compared using modeled compatible spatial frequencies for spectra from the Extreme ultraviolet Imaging Telescope (EIT) on-board the Solar and Heliospheric Observatory (SOHO) and from AIA images. With the new AIA data added to the EIT data we analyzed previously, the whole time interval from 1996 to 2017 reported here is approximately the length of two "standard" solar cycles (SC). The spectral ratios of segmentation-cell dimension structures show a significant and steady increase with no detected indication of SC-related returns to the values that characterize the SC minima. This increase in spatial power at high spatial frequencies is interpreted as a dissipation of medium-size EUV network structures to smaller-size structures in the transition region. Each of the latest ratio changes for 2010 through 2017 spectra calculated for a number of consecutive short-term intervals has been converted into monthly mean ratio (MMR) changes. The MMR values demonstrate variable sign and magnitudes, thus confirming the solar nature of the changes. These changes do not follow a "typical" trend of instrumental degradation or a long-term activity profile from the He ii (30.4 nm) irradiance measured by the Extreme ultraviolet Spectrophotometer (ESP) either. The ESP is a channel of the Extreme ultraviolet Variability Experiment (EVE) on-board SDO.

  1. High-resolution extreme ultraviolet spectroscopy of G191-B2B: structure of the stellar photosphere and the surrounding interstellar medium

    Science.gov (United States)

    Barstow, M. A.; Cruddace, R. G.; Kowalski, M. P.; Bannister, N. P.; Yentis, D.; Lapington, J. S.; Tandy, J. A.; Hubeny, I.; Schuh, S.; Dreizler, S.; Barbee, T. W.

    2005-10-01

    We have continued our detailed analysis of the high-resolution (R= 4000) spectroscopic observation of the DA white dwarf G191-B2B, obtained by the Joint Astrophysical Plasmadynamic Experiment (J-PEX) normal incidence sounding rocket-borne telescope, comparing the observed data with theoretical predictions for both homogeneous and stratified atmosphere structures. We find that the former models give the best agreement over the narrow waveband covered by J-PEX, in conflict with what is expected from previous studies of the lower resolution but broader wavelength coverage Extreme Ultraviolet Explorer spectra. We discuss the possible limitations of the atomic data and our understanding of the stellar atmospheres that might give rise to this inconsistency. In our earlier study, we obtained an unusually high ionization fraction for the ionized HeII present along the line of sight to the star. In the present paper, we obtain a better fit when we assume, as suggested by Space Telescope Imaging Spectrograph results, that this HeII resides in two separate components. When one of these is assigned to the local interstellar cloud, the implied He ionization fraction is consistent with measurements along other lines of sight. However, the resolving power and signal-to-noise available from the instrument configuration used in this first successful J-PEX flight are not sufficient to clearly identify and prove the existence of the two components.

  2. Photoionization of resonantly driven atomic states by an extreme ultraviolet-free-electron laser: intensity dependence and renormalization of Rabi frequencies

    International Nuclear Information System (INIS)

    Kaiser, B; Brand, A; Glässl, M; Vagov, A; Axt, V M; Pietsch, U

    2013-01-01

    We analyze theoretically the high intensity photoionization dynamics of a system with two atomic states resonantly coupled by coherent extreme ultraviolet laser radiation that also gives rise to the ionization. The ground state occupation of such a system is shown to exhibit damped Rabi oscillations. The corresponding ionization, which is responsible for the damping, scales almost linearly with the field intensity when the pulse length exceeds the Rabi period. For shorter pulses a quadratic scaling is found. The Rabi frequency is shifted compared to its value for an isolated two-level system. The shift increases with excitation intensity and can acquire a high percentage of the unrenormalized frequency at high intensities. Analytical results obtained within a simplified solvable model demonstrate that the damping and the shift both result from the coupling of the discrete states to the ionization continuum and are therefore closely related. Numerical simulations for a two-electron system reveal at high intensities the importance of off-resonant ionization channels. (paper)

  3. High-order nonlinear optical processes in ablated carbon-containing materials: Recent approaches in development of the nonlinear spectroscopy using harmonic generation in the extreme ultraviolet range

    Science.gov (United States)

    Ganeev, R. A.

    2017-08-01

    The nonlinear spectroscopy using harmonic generation in the extreme ultraviolet range became a versatile tool for the analysis of the optical, structural and morphological properties of matter. The carbon-contained materials have shown the advanced properties among other studied species, which allowed both the definition of the role of structural properties on the nonlinear optical response and the analysis of the fundamental features of carbon as the attractive material for generation of coherent short-wavelength radiation. We review the studies of the high-order harmonic generation by focusing ultrashort pulses into the plasmas produced during laser ablation of various organic compounds. We discuss the role of ionic transitions of ablated carbon-containing molecules on the harmonic yield. We also show the similarities and distinctions of the harmonic and plasma spectra of organic compounds and graphite. We discuss the studies of the generation of harmonics up to the 27th order (λ = 29.9 nm) of 806 nm radiation in the boron carbide plasma and analyze the advantages and disadvantages of this target compared with the ingredients comprising B4C (solid boron and graphite) by comparing plasma emission and harmonic spectra from three species. We also show that the coincidence of harmonic and plasma emission wavelengths in most cases does not cause the enhancement or decrease of the conversion efficiency of this harmonic.

  4. A Partnership between English Language Learners and a Team of Rocket Scientists: EPO for the NASA SDO Extreme-Ultraviolet Variability Experiment (EVE)

    Science.gov (United States)

    Buhr, S. M.; Eparvier, F.; McCaffrey, M.; Murillo, M.

    2007-12-01

    Recent immigrant high school students were successfully engaged in learning about Sun-Earth connections through a partnership with the NASA SDO Extreme-Ultraviolet Variability Experiment (EVE) project. The students were enrolled in a pilot course as part of the Math, Engineering and Science Achievement MESA) program. For many of the students, this was the only science option available to them due to language limitations. The English Language Learner (ELL) students doubled their achievement on a pre- and post-assessment on the content of the course. Students learned scientific content and vocabulary in English with support in Spanish, attended field trips, hosted scientist speakers, built and deployed space weather monitors as part of the Stanford SOLAR project, and gave final presentations in English, showcasing their new computer skills. Teachers who taught the students in other courses noted gains in the students' willingness to use English in class and noted gains in math skills. The MESA-EVE course won recognition as a Colorado MESA Program of Excellence and is being offered again in 2007-08. The course has been broken into modules for use in shorter after-school environments, or for use by EVE scientists who are outside of the Boulder area. Other EVE EPO includes professional development for teachers and content workshops for journalists.

  5. A Partnership between English Language Learners and a Team of Rocket Scientists: EPO for the NASA SDO Extreme Ultraviolet Variability Experiment (EVE)

    Science.gov (United States)

    Buhr, S. M.; McCaffrey, M. S.; Eparvier, F.; Murillo, M.

    2008-05-01

    Recent immigrant high school students were successfully engaged in learning about Sun-Earth connections through a partnership with the NASA Solar Dynamics Observatory Extreme Ultraviolet Variability Experiment (EVE) project. The students were enrolled in a pilot course as part of the Math, Engineering and Science Achievement (MESA) program. The English Language Learner (ELL) students doubled their achievement on a pre- and post- assessment on the content of the course. Students learned scientific content and vocabulary in English with support in Spanish, attended field trips, hosted scientist speakers, built antenna and deployed space weather monitors as part of the Stanford SOLAR project, and gave final presentations in English, showcasing their new computer skills. Teachers who taught the students in other courses noted gains in the students' willingness to use English in class and noted gains in math skills. The course has been broken into modules for use in shorter after-school environments, or for use by EVE scientists who are outside of the Boulder area. Video footage of "The Making of a Satellite", and "All About EVE" is completed for use in the kits. Other EVE EPO includes upcoming professional development for teachers and content workshops for journalists.

  6. Wavefront measurement of single-mode quantum cascade laser beam for seed application in laser-produced plasma extreme ultraviolet system.

    Science.gov (United States)

    Nowak, Krzysztof M; Ohta, Takeshi; Suganuma, Takashi; Yokotsuka, Toshio; Fujimoto, Junichi; Mizoguchi, Hakaru

    2012-12-01

    Quantum cascade laser (QCL) is a very attractive seed source for a multikilowatt pulsed CO2 lasers applied for driving extreme ultraviolet emitting plasmas. In this Letter, we investigate output beam properties of a QCL designed to address P18 and P20 lines of 10.6 micron band of CO2 molecule. In particular, output beam quality and stability are investigated for the first time. A well-defined linear polarization and a single-mode operation enabled a use of phase retrieval method for full description of QCL output beam. A direct, multi-image numerical phase retrieval technique was developed and successfully applied to the measured intensity patterns of a QCL beam. Very good agreement between the measured and reconstructed beam profiles was observed at distances ranging from QCL aperture to infinity, proving a good understanding of the beam propagation. The results also confirm a high spatial coherence and high stability of the beam parameters, the features expected from an excellent seed source.

  7. Contrasting behavior of covalent and molecular carbon allotropes exposed to extreme ultraviolet and soft x-ray free-electron laser radiation

    Science.gov (United States)

    Toufarová, M.; Hájková, V.; Chalupský, J.; Burian, T.; Vacík, J.; Vorlíček, V.; Vyšín, L.; Gaudin, J.; Medvedev, N.; Ziaja, B.; Nagasono, M.; Yabashi, M.; Sobierajski, R.; Krzywinski, J.; Sinn, H.; Störmer, M.; Koláček, K.; Tiedtke, K.; Toleikis, S.; Juha, L.

    2017-12-01

    All carbon materials, e.g., amorphous carbon (a-C) coatings and C60 fullerene thin films, play an important role in short-wavelength free-electron laser (FEL) research motivated by FEL optics development and prospective nanotechnology applications. Responses of a-C and C60 layers to the extreme ultraviolet (SPring-8 Compact SASE Source in Japan) and soft x-ray (free-electron laser in Hamburg) free-electron laser radiation are investigated by Raman spectroscopy, differential interference contrast, and atomic force microscopy. A remarkable difference in the behavior of covalent (a-C) and molecular (C60) carbonaceous solids is demonstrated under these irradiation conditions. Low thresholds for ablation of a fullerene crystal (estimated to be around 0.15 eV/atom for C60 vs 0.9 eV/atom for a-C in terms of the absorbed dose) are caused by a low cohesive energy of fullerene crystals. An efficient mechanism of the removal of intact C60 molecules from the irradiated crystal due to Coulomb repulsion of fullerene-cage cation radicals formed by the ionizing radiation is revealed by a detailed modeling.

  8. Nonlinear Dichroism in Back-to-Back Double Ionization of He by an Intense Elliptically Polarized Few-Cycle Extreme Ultraviolet Pulse.

    Science.gov (United States)

    Ngoko Djiokap, J M; Manakov, N L; Meremianin, A V; Hu, S X; Madsen, L B; Starace, Anthony F

    2014-11-28

    Control of double ionization of He by means of the polarization and carrier-envelope phase (CEP) of an intense, few-cycle extreme ultraviolet (XUV) pulse is demonstrated numerically by solving the six-dimensional two-electron, time-dependent Schrödinger equation for He interacting with an elliptically polarized XUV pulse. Guided by perturbation theory (PT), we predict the existence of a nonlinear dichroic effect (∝I^{3/2}) that is sensitive to the CEP, ellipticity, peak intensity I, and temporal duration of the pulse. This dichroic effect (i.e., the difference of the two-electron angular distributions for opposite helicities of the ionizing XUV pulse) originates from interference of first- and second-order PT amplitudes, allowing one to probe and control S- and D-wave channels of the two-electron continuum. We show that the back-to-back in-plane geometry with unequal energy sharing is an ideal one for observing this dichroic effect that occurs only for an elliptically polarized, few-cycle attosecond pulse.

  9. Optimized qualification protocol on particle cleanliness for EUV mask infrastructure

    Science.gov (United States)

    van der Donck, J. C. J.; Stortelder, J. K.; Derksen, G. B.

    2011-11-01

    With the market introduction of the NXE:3100, Extreme Ultra Violet Lithography (EUVL) enters a new stage. Now infrastructure in the wafer fabs must be prepared for new processes and new materials. Especially the infrastructure for masks poses a challenge. Because of the absence of a pellicle reticle front sides are exceptionally vulnerable to particles. It was also shown that particles on the backside of a reticle may cause tool down time. These effects set extreme requirements to the cleanliness level of the fab infrastructure for EUV masks. The cost of EUV masks justifies the use of equipment that is qualified on particle cleanliness. Until now equipment qualification on particle cleanliness have not been carried out with statistically based qualification procedures. Since we are dealing with extreme clean equipment the number of observed particles is expected to be very low. These particle levels can only be measured by repetitively cycling a mask substrate in the equipment. Recent work in the EUV AD-tool presents data on added particles during load/unload cycles, reported as number of Particles per Reticle Pass (PRP). In the interpretation of the data, variation by deposition statistics is not taken into account. In measurements with low numbers of added particles the standard deviation in PRP number can be large. An additional issue is that particles which are added in the routing outside the equipment may have a large impact on the testing result. The number mismatch between a single handling step outside the tool and the multiple cycling in the equipment makes accuracy of measurements rather complex. The low number of expected particles, the large variation in results and the combined effect of added particles inside and outside the equipment justifies putting good effort in making a test plan. Without a proper statistical background, tests may not be suitable for proving that equipment qualifies for the limiting cleanliness levels. Other risks are that a

  10. Solar EUV irradiance for space weather applications

    Science.gov (United States)

    Viereck, R. A.

    2015-12-01

    Solar EUV irradiance is an important driver of space weather models. Large changes in EUV and x-ray irradiances create large variability in the ionosphere and thermosphere. Proxies such as the F10.7 cm radio flux, have provided reasonable estimates of the EUV flux but as the space weather models become more accurate and the demands of the customers become more stringent, proxies are no longer adequate. Furthermore, proxies are often provided only on a daily basis and shorter time scales are becoming important. Also, there is a growing need for multi-day forecasts of solar EUV irradiance to drive space weather forecast models. In this presentation we will describe the needs and requirements for solar EUV irradiance information from the space weather modeler's perspective. We will then translate these requirements into solar observational requirements such as spectral resolution and irradiance accuracy. We will also describe the activities at NOAA to provide long-term solar EUV irradiance observations and derived products that are needed for real-time space weather modeling.

  11. Uncovering New Thermal and Elastic Properties of Nanostructured Materials Using Coherent EUV Light

    Science.gov (United States)

    Hernandez Charpak, Jorge Nicolas

    Advances in nanofabrication have pushed the characteristic dimensions of nanosystems well below 100nm, where physical properties are often significantly different from their bulk counterparts, and accurate models are lacking. Critical technologies such as thermoelectrics for energy harvesting, nanoparticle-mediated thermal therapy, nano-enhanced photovoltaics, and efficient thermal management in integrated circuits depend on our increased understanding of the nanoscale. However, traditional microscopic characterization tools face fundamental limits at the nanoscale. Theoretical efforts to build a fundamental picture of nanoscale thermal dynamics lack experimental validation and still struggle to account for newly reported behaviors. Moreover, precise characterization of the elastic behavior of nanostructured systems is needed for understanding the unique physics that become apparent in small-scale systems, such as thickness-dependent or fabrication-dependent elastic properties. In essence, our ability to fabricate nanosystems has outstripped our ability to understand and characterize them. In my PhD thesis, I present the development and refinement of coherent extreme ultraviolet (EUV) nanometrology, a novel tool used to probe material properties at the intrinsic time- and length-scales of nanoscale dynamics. By extending ultrafast photoacoustic and thermal metrology techniques to very short probing wavelengths using tabletop coherent EUV beams from high-harmonic upconversion (HHG) of femtosecond lasers, coherent EUV nanometrology allows for a new window into nanoscale physics, previously unavailable with traditional techniques. Using this technique, I was able to probe both thermal and acoustic dynamics in nanostructured systems with characteristic dimensions below 50nm with high temporal (sub-ps) and spatial (size and spacing of the nanoscale heat sources with the phonon spectrum of a material. This makes our technique one of the only experimental routes to

  12. Initiation and early evolution of the coronal mass ejection on 2009 May 13 from extreme-ultraviolet and white-light observations

    International Nuclear Information System (INIS)

    Reva, A. A.; Ulyanov, A. S.; Bogachev, S. A.; Kuzin, S. V.

    2014-01-01

    We present the results of the observations of a coronal mass ejection (CME) that occurred on 2009 May 13. The most important feature of these observations is that the CME was observed from the very early stage (the solar surface) up to a distance of 15 solar radii (R ☉ ). Below 2 R ☉ , we used the data from the TESIS extreme-ultraviolet telescopes obtained in the Fe 171 Å and He 304 Å lines, and above 2 R ☉ , we used the observations of the LASCO C2 and C3 coronagraphs. The CME was formed at a distance of 0.2-0.5R ☉ from the Sun's surface as a U-shaped structure, which was observed both in the 171 Å images and in the white light. Observations in the He 304 Å line showed that the CME was associated with an erupting prominence, which was not located above—as the standard model predicts—but rather in the lowest part of the U-shaped structure close to the magnetic X point. The prominence location can be explained with the CME breakout model. Estimates showed that CME mass increased with time. The CME trajectory was curved—its heliolatitude decreased with time. The CME started at a latitude of 50° and reached the ecliptic plane at distances of 2.5 R ☉ . The CME kinematics can be divided into three phases: initial acceleration, main acceleration, and propagation with constant velocity. After the CME, onset GOES registered a sub-A-class flare.

  13. Initiation and Early Evolution of the Coronal Mass Ejection on 2009 May 13 from Extreme-ultraviolet and White-light Observations

    Science.gov (United States)

    Reva, A. A.; Ulyanov, A. S.; Bogachev, S. A.; Kuzin, S. V.

    2014-10-01

    We present the results of the observations of a coronal mass ejection (CME) that occurred on 2009 May 13. The most important feature of these observations is that the CME was observed from the very early stage (the solar surface) up to a distance of 15 solar radii (R ⊙). Below 2 R ⊙, we used the data from the TESIS extreme-ultraviolet telescopes obtained in the Fe 171 Å and He 304 Å lines, and above 2 R ⊙, we used the observations of the LASCO C2 and C3 coronagraphs. The CME was formed at a distance of 0.2-0.5R ⊙ from the Sun's surface as a U-shaped structure, which was observed both in the 171 Å images and in the white light. Observations in the He 304 Å line showed that the CME was associated with an erupting prominence, which was not located above—as the standard model predicts—but rather in the lowest part of the U-shaped structure close to the magnetic X point. The prominence location can be explained with the CME breakout model. Estimates showed that CME mass increased with time. The CME trajectory was curved—its heliolatitude decreased with time. The CME started at a latitude of 50° and reached the ecliptic plane at distances of 2.5 R ⊙. The CME kinematics can be divided into three phases: initial acceleration, main acceleration, and propagation with constant velocity. After the CME, onset GOES registered a sub-A-class flare.

  14. Initiation and early evolution of the coronal mass ejection on 2009 May 13 from extreme-ultraviolet and white-light observations

    Energy Technology Data Exchange (ETDEWEB)

    Reva, A. A.; Ulyanov, A. S.; Bogachev, S. A.; Kuzin, S. V., E-mail: reva.antoine@gmail.com [Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskij Prospekt, 119991 Moscow (Russian Federation)

    2014-10-01

    We present the results of the observations of a coronal mass ejection (CME) that occurred on 2009 May 13. The most important feature of these observations is that the CME was observed from the very early stage (the solar surface) up to a distance of 15 solar radii (R {sub ☉}). Below 2 R {sub ☉}, we used the data from the TESIS extreme-ultraviolet telescopes obtained in the Fe 171 Å and He 304 Å lines, and above 2 R {sub ☉}, we used the observations of the LASCO C2 and C3 coronagraphs. The CME was formed at a distance of 0.2-0.5R {sub ☉} from the Sun's surface as a U-shaped structure, which was observed both in the 171 Å images and in the white light. Observations in the He 304 Å line showed that the CME was associated with an erupting prominence, which was not located above—as the standard model predicts—but rather in the lowest part of the U-shaped structure close to the magnetic X point. The prominence location can be explained with the CME breakout model. Estimates showed that CME mass increased with time. The CME trajectory was curved—its heliolatitude decreased with time. The CME started at a latitude of 50° and reached the ecliptic plane at distances of 2.5 R {sub ☉}. The CME kinematics can be divided into three phases: initial acceleration, main acceleration, and propagation with constant velocity. After the CME, onset GOES registered a sub-A-class flare.

  15. Ionospheric Change and Solar EUV Irradiance

    Science.gov (United States)

    Sojka, J. J.; David, M.; Jensen, J. B.; Schunk, R. W.

    2011-12-01

    The ionosphere has been quantitatively monitored for the past six solar cycles. The past few years of observations are showing trends that differ from the prior cycles! Our good statistical relationships between the solar radio flux index at 10.7 cm, the solar EUV Irradiance, and the ionospheric F-layer peak density are showing indications of divergence! Present day discussion of the Sun-Earth entering a Dalton Minimum would suggest change is occurring in the Sun, as the driver, followed by the Earth, as the receptor. The dayside ionosphere is driven by the solar EUV Irradiance. But different components of this spectrum affect the ionospheric layers differently. For a first time the continuous high cadence EUV spectra from the SDO EVE instrument enable ionospheric scientists the opportunity to evaluate solar EUV variability as a driver of ionospheric variability. A definitive understanding of which spectral components are responsible for the E- and F-layers of the ionosphere will enable assessments of how over 50 years of ionospheric observations, the solar EUV Irradiance has changed. If indeed the evidence suggesting the Sun-Earth system is entering a Dalton Minimum periods is correct, then the comprehensive EVE solar EUV Irradiance data base combined with the ongoing ionospheric data bases will provide a most fortuitous fiduciary reference baseline for Sun-Earth dependencies. Using the EVE EUV Irradiances, a physics based ionospheric model (TDIM), and 50 plus years of ionospheric observation from Wallops Island (Virginia) the above Sun-Earth ionospheric relationship will be reported on.

  16. A Compact Extreme Ultraviolet Imager

    Data.gov (United States)

    National Aeronautics and Space Administration — Just how far can one shrink a solar/heliospheric image??? — Can you shrink it small enough to fit on a cube-sat? What can we image — successfully — from a cube-sat?...

  17. EUV Spectra of High Z Impurities from Large Helical Device and Atomic Data

    International Nuclear Information System (INIS)

    Kato, T.; Suzuki, C.; Funaba, H.; Sato, K.; Murakami, I.; Kato, D.; Sakaue, H.; O’Sullivan, G.; Harte, C.; White, J.; D’Arcy, R.; Tanuma, H.; Nakamura, N.

    2017-01-01

    The results of experiments on high Z impurity injection in the Large Helical Device at the National Institute for Fusion Science are described. Spectra from Xe, Sn and W ions were recorded in the extreme ultraviolet spectral region. Two different situations were observed in the case of Xe and Sn, depending on whether or not the plasma underwent radiative collapse. If the plasma was stable, the spectrum consisted of a number of strong lines and in both cases the strongest contribution was from 4p - 4d transitions of Cu-like ions. If the plasma underwent radiative collapse in each case it was dominated by an intense unresolved transition array with some strong lines overlapping it resulting from 4p 6 4d m - 4p 5 4d m+1 + 4p 6 4d m-1 4f transitions. For tungsten, radiative collapse was not observed though the spectrum here was dominated by the same array which lies between 4.5 and 7 nm with some additional contribution at the same wavelength from 4d 10 4f m - 4d 9 4f m+1 and 4d 10 4f m - 4d 10 4f m-1 5d transitions in lower stages also. From observation and comparison with other sources, it is shown that the spectra are dominated by resonance transitions to the ground state of the emitting ions, in marked contrast to results from charge exchange spectra that had been recorded to assist with ion stage separation. In the case of tungsten, no sharp lines are seen though the profile of the unresolved array structure changes with plasma temperature and the origin of these changes can be traced to differences in the populations of contributing ions. New assignments for lines of Xe XVIII, Sn XIX and Sn XVII of 4p - 4d transitions are listed in Tables. Strong lines of W, Xe and Sn ions in EUV range are also tabulated. (author)

  18. A two-step method for fast and reliable EUV mask metrology

    Science.gov (United States)

    Helfenstein, Patrick; Mochi, Iacopo; Rajendran, Rajeev; Yoshitake, Shusuke; Ekinci, Yasin

    2017-03-01

    One of the major obstacles towards the implementation of extreme ultraviolet lithography for upcoming technology nodes in semiconductor industry remains the realization of a fast and reliable detection methods patterned mask defects. We are developing a reflective EUV mask-scanning lensless imaging tool (RESCAN), installed at the Swiss Light Source synchrotron at the Paul Scherrer Institut. Our system is based on a two-step defect inspection method. In the first step, a low-resolution defect map is generated by die to die comparison of the diffraction patterns from areas with programmed defects, to those from areas that are known to be defect-free on our test sample. In a later stage, a die to database comparison will be implemented in which the measured diffraction patterns will be compared to those calculated directly from the mask layout. This Scattering Scanning Contrast Microscopy technique operates purely in the Fourier domain without the need to obtain the aerial image and, given a sufficient signal to noise ratio, defects are found in a fast and reliable way, albeit with a location accuracy limited by the spot size of the incident illumination. Having thus identified rough locations for the defects, a fine scan is carried out in the vicinity of these locations. Since our source delivers coherent illumination, we can use an iterative phase-retrieval method to reconstruct the aerial image of the scanned area with - in principle - diffraction-limited resolution without the need of an objective lens. Here, we will focus on the aerial image reconstruction technique and give a few examples to illustrate the capability of the method.

  19. Mask-induced aberration in EUV lithography

    Science.gov (United States)

    Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

    2009-04-01

    We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

  20. Metal Oxide Nanoparticle Photoresists for EUV Patterning

    KAUST Repository

    Jiang, Jing

    2014-01-01

    © 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.

  1. Phosphorus-based compounds for EUV multilayer optics materials

    NARCIS (Netherlands)

    Medvedev, Viacheslav; Yakshin, Andrey; van de Kruijs, Robbert Wilhelmus Elisabeth; Bijkerk, Frederik

    2015-01-01

    We have evaluated the prospects of phosphorus-based compounds in extreme ultraviolet multilayer optics. Boron phosphide (BP) is suggested to be used as a spacer material in reflective multilayer optics operating just above the L-photoabsorption edge of P (λ ≈9.2 nm). Mo, Ag, Ru, Rh, and Pd were

  2. Extreme ultraviolet and soft x-ray diagnostics of high-temperature plasmas. Annual progress report, June 1, 1977--May 31, 1978

    International Nuclear Information System (INIS)

    Moos, H.W.; Armstrong, L. Jr.; Fastie, W.G.

    1978-01-01

    Spatial scans of Alcator Tokamak have led to a more direct determination of the oxygen and nitrogen concentrations. These scans have also shown that grad B and curvature drifts are significant transport mechanisms in this device. Spatial scans of Elmo Bumpy Torus from both the top and the side have produced two dimensional plots of the impurity concentrations. Preliminary results from 2XIIB show that oxygen is the dominant impurity; nitrogen, carbon, and titanium are also present. The Spatial Imaging Detector System is discussed; construction is complete and it is being prepared for installation on a plasma machine. EUV photometric calibration techiques at this laboratory are described. The accuracy and stability of this calibration is discussed. Theoretical calculations of relativistic transition rates and energies have continued, and studies of electron-impact ionization and excitation cross sections have begun

  3. Metal Oxide Nanoparticle Photoresists for EUV Patterning

    KAUST Repository

    Jiang, Jing; Chakrabarty, Souvik; Yu, Mufei; Ober, Christopher K.

    2014-01-01

    © 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have

  4. Objective for EUV microscopy, EUV lithography, and x-ray imaging

    Science.gov (United States)

    Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

    2016-05-03

    Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

  5. Very short-term reactive forecasting of the solar ultraviolet index using an extreme learning machine integrated with the solar zenith angle.

    Science.gov (United States)

    Deo, Ravinesh C; Downs, Nathan; Parisi, Alfio V; Adamowski, Jan F; Quilty, John M

    2017-05-01

    Exposure to erythemally-effective solar ultraviolet radiation (UVR) that contributes to malignant keratinocyte cancers and associated health-risk is best mitigated through innovative decision-support systems, with global solar UV index (UVI) forecast necessary to inform real-time sun-protection behaviour recommendations. It follows that the UVI forecasting models are useful tools for such decision-making. In this study, a model for computationally-efficient data-driven forecasting of diffuse and global very short-term reactive (VSTR) (10-min lead-time) UVI, enhanced by drawing on the solar zenith angle (θ s ) data, was developed using an extreme learning machine (ELM) algorithm. An ELM algorithm typically serves to address complex and ill-defined forecasting problems. UV spectroradiometer situated in Toowoomba, Australia measured daily cycles (0500-1700h) of UVI over the austral summer period. After trialling activations functions based on sine, hard limit, logarithmic and tangent sigmoid and triangular and radial basis networks for best results, an optimal ELM architecture utilising logarithmic sigmoid equation in hidden layer, with lagged combinations of θ s as the predictor data was developed. ELM's performance was evaluated using statistical metrics: correlation coefficient (r), Willmott's Index (WI), Nash-Sutcliffe efficiency coefficient (E NS ), root mean square error (RMSE), and mean absolute error (MAE) between observed and forecasted UVI. Using these metrics, the ELM model's performance was compared to that of existing methods: multivariate adaptive regression spline (MARS), M5 Model Tree, and a semi-empirical (Pro6UV) clear sky model. Based on RMSE and MAE values, the ELM model (0.255, 0.346, respectively) outperformed the MARS (0.310, 0.438) and M5 Model Tree (0.346, 0.466) models. Concurring with these metrics, the Willmott's Index for the ELM, MARS and M5 Model Tree models were 0.966, 0.942 and 0.934, respectively. About 57% of the ELM model

  6. Spectroscopy of the extreme ultraviolet dayglow at 6.5A resolution - Atomic and ionic emissions between 530 and 1240A

    Science.gov (United States)

    Gentieu, E. P.; Feldman, P. D.; Meier, R. R.

    1979-01-01

    EUV spectra (530-1500A) of the day airglow in up, down and horizontal aspect orientations have been obtained with 6.5A resolution and a limiting sensitivity of 5R from a rocket experiment. Below 834A the spectrum is rich in previously unobserved OII transitions connecting with 4S(0), 2D(0), and 2P(0) states. Recent broad-band photometric observations of geocoronal HeI 584A emission in terms of the newly observed OII emissions are shown. The OI 989A and OI 1304A emissions exhibit similar dependence on altitude and viewing geometry with the OI 989A brightness 1/15 that of OI 1340. Emission at 1026A is identified as geocoronal HI Lyman beta rather than OI multiplet emission and observed intensities agree well with model estimates. An unexpectedly high NI 1200/NI 1134A brightness ratio is evidence of a significant contribution from photodissociative excitation of N2 to the NI 1200A source function.

  7. Validation of Earth atmosphere models using solar EUV observations from the CORONAS and PROBA2 satellites in occultation mode

    Science.gov (United States)

    Slemzin, Vladimir; Ulyanov, Artyom; Gaikovich, Konstantin; Kuzin, Sergey; Pertsov, Andrey; Berghmans, David; Dominique, Marie

    2016-02-01

    Aims: Knowledge of properties of the Earth's upper atmosphere is important for predicting the lifetime of low-orbit spacecraft as well as for planning operation of space instruments whose data may be distorted by atmospheric effects. The accuracy of the models commonly used for simulating the structure of the atmosphere is limited by the scarcity of the observations they are based on, so improvement of these models requires validation under different atmospheric conditions. Measurements of the absorption of the solar extreme ultraviolet (EUV) radiation in the upper atmosphere below 500 km by instruments operating on low-Earth orbits (LEO) satellites provide efficient means for such validation as well as for continuous monitoring of the upper atmosphere and for studying its response to the solar and geomagnetic activity. Method: This paper presents results of measurements of the solar EUV radiation in the 17 nm wavelength band made with the SPIRIT and TESIS telescopes on board the CORONAS satellites and the SWAP telescope on board the PROBA2 satellite in the occulted parts of the satellite orbits. The transmittance profiles of the atmosphere at altitudes between 150 and 500 km were derived from different phases of solar activity during solar cycles 23 and 24 in the quiet state of the magnetosphere and during the development of a geomagnetic storm. We developed a mathematical procedure based on the Tikhonov regularization method for solution of ill-posed problems in order to retrieve extinction coefficients from the transmittance profiles. The transmittance profiles derived from the data and the retrieved extinction coefficients are compared with simulations carried out with the NRLMSISE-00 atmosphere model maintained by Naval Research Laboratory (USA) and the DTM-2013 model developed at CNES in the framework of the FP7 project ATMOP. Results: Under quiet and slightly disturbed magnetospheric conditions during high and low solar activity the extinction coefficients

  8. Laser-produced lithium plasma as a narrow-band extended ultraviolet radiation source for photoelectron spectroscopy.

    Science.gov (United States)

    Schriever, G; Mager, S; Naweed, A; Engel, A; Bergmann, K; Lebert, R

    1998-03-01

    Extended ultraviolet (EUV) emission characteristics of a laser-produced lithium plasma are determined with regard to the requirements of x-ray photoelectron spectroscopy. The main features of interest are spectral distribution, photon flux, bandwidth, source size, and emission duration. Laser-produced lithium plasmas are characterized as emitters of intense narrow-band EUV radiation. It can be estimated that the lithium Lyman-alpha line emission in combination with an ellipsoidal silicon/molybdenum multilayer mirror is a suitable EUV source for an x-ray photoelectron spectroscopy microscope with a 50-meV energy resolution and a 10-mum lateral resolution.

  9. Highly Stable, Large Format EUV Imager, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Higher detection efficiency and better radiation tolerance imagers are needed for the next generation of EUV instruments. Previously, CCD technology has demonstrated...

  10. EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

    Science.gov (United States)

    Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

    2010-04-01

    Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

  11. Atomic hydrogen cleaning of EUV multilayer optics

    Science.gov (United States)

    Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

    2003-06-01

    Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Å/hr for sputtered carbon and 40 Å/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning

  12. EUV lines observed with EIS/Hinode in a solar prominence

    Science.gov (United States)

    Labrosse, N.; Schmieder, B.; Heinzel, P.; Watanabe, T.

    2011-07-01

    Context. During a multi-wavelength observation campaign with Hinode and ground-based instruments, a solar prominence was observed for three consecutive days as it crossed the western limb of the Sun in April 2007. Aims: We report on observations obtained on 26 April 2007 using EIS (Extreme ultraviolet Imaging Spectrometer) on Hinode. They are analysed to provide a qualitative diagnostic of the plasma in different parts of the prominence. Methods: After correcting for instrumental effects, the rasters at different wavelengths are presented. Several regions within the same prominence are identified for further analysis. Selected profiles for lines with formation temperatures between log (T) = 4.7 and log (T) = 6.3, as well as their integrated intensities, are given. The profiles of coronal, transition region, and He ii lines are discussed. We pay special attention to the He ii line, which is blended with coronal lines. Results: Some quantitative results are obtained by analysing the line profiles. They confirm that depression in EUV lines can be interpreted in terms of two mechanisms: absorption of coronal radiation by the hydrogen and neutral helium resonance continua, and emissivity blocking. We present estimates of the He ii line integrated intensity in different parts of the prominence according to different scenarios for the relative contribution of absorption and emissivity blocking to the coronal lines blended with the He ii line. We estimate the contribution of the He ii 256.32 Å line to the He ii raster image to vary between ~44% and 70% of the raster's total intensity in the prominence according to the different models used to take into account the blending coronal lines. The inferred integrated intensities of the He ii 256 Å line are consistent with the theoretical intensities obtained with previous 1D non-LTE radiative transfer calculations, yielding a preliminary estimate of the central temperature of 8700 K, a central pressure of 0.33 dyn cm-2, and a

  13. EUV multilayer mirrors with enhanced stability

    Science.gov (United States)

    Benoit, Nicolas; Yulin, Sergiy; Feigl, Torsten; Kaiser, Norbert

    2006-08-01

    The application of multilayer optics in EUV lithography requires not only the highest possible normal-incidence reflectivity but also a long-term thermal and radiation stability at operating temperatures. This requirement is most important in the case of the collector mirror of the illumination system close to the EUV source where a short-time decrease in reflectivity is most likely. Mo/Si multilayer mirrors, designed for high normal reflectivity at the wavelength of 13.5 nm and deposited by dc magnetron sputtering, were directly exposed to EUV radiation without mitigation system. They presented a loss of reflectivity of more than 18% after only 8 hours of irradiation by a Xe-discharge source. Another problem of Mo/Si multilayers is the instability of reflectivity and peak wavelength under high heat load. It becomes especially critical at temperatures above 200°C, where interdiffusion between the molybdenum and the silicon layers is observed. The development of high-temperature multilayers was focused on two alternative Si-based systems: MoSi II/Si and interface engineered Mo/C/Si/C multilayer mirrors. The multilayer designs as well as the deposition parameters of all systems were optimized in terms of high peak reflectivity (>= 60 %) at a wavelength of 13.5 nm and high thermal stability. Small thermally induced changes of the MoSi II/Si multilayer properties were found but they were independent of the annealing time at all temperatures examined. A wavelength shift of -1.7% and a reflectivity drop of 1.0% have been found after annealing at 500°C for 100 hours. The total degradation of optical properties above 650°C can be explained by a recrystallization process of MoSi II layers.

  14. Femtosecond induced transparency and absorption in the extreme ultraviolet by coherent coupling of the He 2s2p (1Po) and 2p2 (1Se) double excitation states with 800 nm light

    International Nuclear Information System (INIS)

    Loh, Z.-H.; Greene, C.H.; Leone, S.R.

    2007-01-01

    Femtosecond high-order harmonic transient absorption spectroscopy is used to observe electromagnetically induced transparency-like behavior as well as induced absorption in the extreme ultraviolet by laser dressing of the He 2s2p ( 1 P 0 ) and 2p 2 ( 1 S e ) double excitation states with an intense 800 nm field. Probing in the vicinity of the 1s 2 → 2s2p transition at 60.15 eV reveals the formation of an Autler-Townes doublet due to coherent coupling of the double excitation states. Qualitative agreement with the experimental spectra is obtained only when optical field ionization of both double excitation states into the N = 2 continuum is included in the theoretical model. Because the Fano q-parameter of the unperturbed probe transition is finite, the laser-dressed He atom exhibits both enhanced transparency and absorption at negative and positive probe energy detunings, respectively

  15. e-beam induced EUV photomask repair: a perfect match

    Science.gov (United States)

    Waiblinger, M.; Kornilov, K.; Hofmann, T.; Edinger, K.

    2010-05-01

    Due to the updated ITRS roadmap EUV might enter the market as a productive solution for the 32 nm node1. Since the EUV-photomask is used as mirror and no longer as transitive device the severity of different defect types has changed significantly. Furthermore the EUV-photomask material stack is much more complex than the conventional 193nm photomask materials which expand the field of critical defect types even further. In this paper we will show, that "classical" 193 mask repair processes cannot be applied to EUV material. We will show the performance of a new repair process based on the novel ebeam repair tool MeRiT® HR 32. Furthermore this process will be applied on real EUV mask defects and the success of these repairs confirmed by wafer prints.

  16. Ultraviolet Extensions

    Science.gov (United States)

    2008-01-01

    [figure removed for brevity, see original site] Side-by-Side Comparison Click on image for larger view This ultraviolet image from NASA's Galaxy Evolution Explorer shows the Southern Pinwheel galaxy, also know as Messier 83 or M83. It is located 15 million light-years away in the southern constellation Hydra. Ultraviolet light traces young populations of stars; in this image, young stars can be seen way beyond the main spiral disk of M83 up to 140,000 light-years from its center. Could life exist around one of these far-flung stars? Scientists say it's unlikely because the outlying regions of a galaxy are lacking in the metals required for planets to form. The image was taken at scheduled intervals between March 15 and May 20, 2007. It is one of the longest-exposure, or deepest, images ever taken of a nearby galaxy in ultraviolet light. Near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow, and far-ultraviolet light is blue. What Lies Beyond the Edge of a Galaxy The side-by-side comparison shows the Southern Pinwheel galaxy, or M83, as seen in ultraviolet light (right) and at both ultraviolet and radio wavelengths (left). While the radio data highlight the galaxy's long, octopus-like arms stretching far beyond its main spiral disk (red), the ultraviolet data reveal clusters of baby stars (blue) within the extended arms. The ultraviolet image was taken by NASA's Galaxy Evolution Explorer between March 15 and May 20, 2007, at scheduled intervals. Back in 2005, the telescope first photographed M83 over a shorter period of time. That picture was the first to reveal far-flung baby stars forming up to 63,000 light-years from the edge of the main spiral disk. This came as a surprise to astronomers because a galaxy's outer territory typically lacks high densities of star-forming materials. The newest picture of M83 from the Galaxy Evolution Explorer is shown at the right, and was taken over a longer period of time. In fact, it is one of the

  17. The mutagenic effect of near ultraviolet light on the nvs strains of Aspergillus nidulans in the presence of 8-metoxypsoralen or angelicin

    International Nuclear Information System (INIS)

    Muronets, E.M.; Kovtunenko, L.V.; Kameneva, S.V.

    1980-01-01

    The mutual mutagenic effect of long-wave ultraviolet radiation (EUV) with angelicin which forms monoadducts in DNA and 8-metoxypsoralen (8 MOP) which forms monoadducts and joints, on conidia of uvs- and uvs+ strains of Aspergillus nidulans, is studied. The two types of interaction are shown to induce mutations intensively. Mutation induction with angelicin shows the role of psoralen pyrimidine monoadducts in mutagenesis. The technique of fractionated EUV radiation and studying the effect of monoadduct repair effectiveness on mutation output permits to prove that interthread DNA joints induced by 8-MOP+EUV are also highly mutagenous. The products of UVS/2, 20b, 26 genes which take part in the excision of DNA damages do not take part in the formation of mutations induced in aspergil by furocoumarine + EUV. The products of uvs 19, 20a genes which take part in the postreplicative DNA reduction are neccessary for the repair of premutation damages induced by furocoumarine + EUV

  18. Ultraviolet sterilization

    International Nuclear Information System (INIS)

    Schenck, G.O.

    1987-01-01

    Artificial ultraviolet radiation sources can supply bactericidal energy in such a high dosage that in less than a second a higher degree of disinfection is accomplished than by sun irradiation in hours. Bacteria, viruses, phages, and organic micropollutants can be degraded by photochemical wet combustion down to and below detection limits of organic carbon. There are no known ultraviolet-resistant microorganisms. There are limitations to ultraviolet treatment which can often be overcome by adequate technical measures. Unlike other water purification processes, ultraviolet irradiation only exterminates living organisms. The radiation must be able to penetrate to the objects of the kill; in a dose large enough to kill, and long enough to kill and prevent new growth. Contrary to filters, ultraviolet flow-through reactors do not restrict free flow significantly. In contrast to distillation, ultraviolet irradiation imposes no phase changes to the water. Used as a sequence in ultrapure water systems, maintenance requirements are virtually nonexistent; because of the absence of dissolved and particulate matter in purified water, mechanical cleaning of the photoreactor chambers is not essential. The process is highly economical; energy consumption is low and supervision minimal. 103 refs., 45 figs., 15 tabs

  19. EUV laser produced and induced plasmas for nanolithography

    Science.gov (United States)

    Sizyuk, Tatyana; Hassanein, Ahmed

    2017-10-01

    EUV produced plasma sources are being extensively studied for the development of new technology for computer chips production. Challenging tasks include optimization of EUV source efficiency, producing powerful source in 2 percentage bandwidth around 13.5 nm for high volume manufacture (HVM), and increasing the lifetime of collecting optics. Mass-limited targets, such as small droplet, allow to reduce contamination of chamber environment and mirror surface damage. However, reducing droplet size limits EUV power output. Our analysis showed the requirement for the target parameters and chamber conditions to achieve 500 W EUV output for HVM. The HEIGHTS package was used for the simulations of laser produced plasma evolution starting from laser interaction with solid target, development and expansion of vapor/plasma plume with accurate optical data calculation, especially in narrow EUV region. Detailed 3D modeling of mix environment including evolution and interplay of plasma produced by lasers from Sn target and plasma produced by in-band and out-of-band EUV radiation in ambient gas, used for the collecting optics protection and cleaning, allowed predicting conditions in entire LPP system. Effect of these conditions on EUV photon absorption and collection was analyzed. This work is supported by the National Science Foundation, PIRE project.

  20. Grazing incidence EUV study of the Alcator tokamaks

    International Nuclear Information System (INIS)

    Castracane, J.

    1982-01-01

    The use of impurity radiation to examine plasma conditions is a well known technique. To gain access, however, to the hot, central portion of the plasma created in the present confinement machines it is necessary to be able to observe radiation from medium and heavy elements such as molybdenum and iron. These impurities radiate primarily in the extreme ultra violet region of the spectrum and can play a role in the power balance of the tokamak. Radiation from highly ionized molybdenum was examined on the Alcator A and C tokamaks using a photometrically calibrated one meter grazing incidence monochromator. On Alcator A, a pseudo-continuum of Mo emissions in the 60 to 100 A ranges were seen to comprise 17% of the radiative losses from the plasma. This value closely matched measurements by a broad band bolometer array. Following these preliminary measurements, the monochromator was transferred to Alcator C for a more thorough examination of EUV emissions. Deviations from predicted scaling laws for energy confinement time vs density were observed on this machine

  1. EUV emission from Kr and Xe capillary discharge plasmas

    International Nuclear Information System (INIS)

    Juschkin, L.; Ellwi, S.; Kunze, H-J.; Chuvatin, A.; Zakharov, S.V.

    2002-01-01

    Kr and Xe plasmas are very intensive emitters in the spectral range of 100-150 A, which is relevant for a number of applications (for example microlithography). We present investigations of the extreme utraviolet (EUV) emission from a slow capillary discharge with Kr and Xe fillings. The emission of Kr ions (Kr VIII to Kr XI) within the range of 70-150 A consists of three bands of lines of about 10 A width with maxima at 116, 103 and 86 A. Xe emission bands of about 15 A width have their maxima at 136 and 115 A (Xe IX to Xe XII). The radiation duration in this spectral range is ∼150 ns for both elements. At the optimum conditions, the Kr emission at 103 A is 2-3 times more intense than the Xe emission at 136 A. The measured spectral energy of Kr radiation is about 0.1 J sr -1 A -1 . Experimental results are compared with numerical modellings of the dynamics and emission of the capillary discharge plasma, which enables the determination of plasma parameters and the future use of the codes as additional instruments for plasma diagnostics. (author)

  2. Analysis and characterization of contamination in EUV reticles

    Science.gov (United States)

    Okoroanyanwu, Uzodinma; Dittmar, Kornelia; Fahr, Torsten; Wallow, Tom; La Fontaine, Bruno; Wood, Obert; Holfeld, Christian; Bubke, Karsten; Peters, Jan-Hendrik

    2010-04-01

    A host of complementary imaging techniques (Scanning Electron Microscopy), surface analytical technique (Auger Electron Spectroscopy, AES), chemical analytical and speciation techniques (Grazing Incidence Reflectance Fourier-Transform Infrared Spectroscopy, GIR-FTIR; and Raman spectroscopy) have been assessed for their sensitivity and effectiveness in analyzing contamination on three EUV reticles that were contaminated to varying degrees. The first reticle was contaminated as a result of its exposure experience on the SEMATECH EUV Micro Exposure Tool (MET) at Lawrence Berkeley National Laboratories, where it was exposed to up to 80 hours of EUV radiation. The second reticle was a full-field reticle, specifically designed to monitor molecular contamination, and exposed to greater than 1600J/cm2 of EUV radiation on the ASML Alpha Demo Tool (ADT) in Albany Nanotech in New York. The third reticle was intentionally contaminated with hydrocarbons in the Microscope for Mask Imaging and Contamination Studies (MIMICS) tool at the College of Nanoscale Sciences of State University of New York at Albany. The EUV reflectivities of some of these reticles were measured on the Advanced Light Source EUV Reflectomer at Lawrence Berkeley National Laboratories and PTB Bessy in Berlin, respectively. Analysis and characterization of thin film contaminants on the two EUV reticles exposed to varying degrees of EUV radiation in both MET and ADT confirm that the two most common contamination types are carbonization and surface oxidation, mostly on the exposed areas of the reticle, and with the MET being significantly more susceptible to carbon contamination than the ADT. While AES in both surface scanning and sputter mode is sensitive and efficient in analyzing thin contaminant films (of a few nanometers), GIRFTIR is sensitive to thick films (of order of a 100 nm or more on non-infra-red reflecting substrates), Raman spectroscopy is not compatible with analyzing such contaminants because of

  3. Experimental and theoretical study on emission spectra of a nitrogen photoionized plasma induced by intense EUV pulses

    Directory of Open Access Journals (Sweden)

    Saber Ismail

    2018-01-01

    Full Text Available Spectral lines of low-temperature nitrogen photoionized plasma were investigated. The photoionized plasma was created in the result of irradiation N2 gas using laser plasma EUV radiation pulses. The source was based on a 10J/10ns Nd:YAG (λ = 1064 nm laser system and a gas puff target. The EUV radiation pulses were collected and focused using a grazing incidence multifoil EUV collector. The emission spectra were measured in the ultraviolet and visible (UV/Vis range. It was found that the plasma emission lines in the lower region of the UV range are relativley weak. Nonetheless, a part of the spectra contains strong molecular band in the 300 - 430 nm originated from second positive and first negative systems band transitions of nitrogen. These molecular band transitions were identified using a code for study the diatomic molecules, LIFBASE. The vibrational band of Δv = 0 and ±1 transitions were significantly populated than of that with Δv = ±2 and 3 transitions. A comparison of the calculated and measured spectrum is presented. With an assumption of a local thermodynamic equilibrium (LTE, the vibrational temperature was determined from the integrated band intensities with the help of the Boltzmann plot method and compared to the temperature predicted by SPECAIR and LIFBASE simulations. A summary of the results and the variations in the vibrational temperatures was discussed.

  4. Experimental and theoretical study on emission spectra of a nitrogen photoionized plasma induced by intense EUV pulses

    Science.gov (United States)

    Saber, Ismail; Bartnik, Andrzej; Skrzeczanowski, Wojciech; Wachulak, Przemyslaw; Jarocki, Roman; Fiedorowicz, Henryk; Limpouch, Jiri

    2018-01-01

    Spectral lines of low-temperature nitrogen photoionized plasma were investigated. The photoionized plasma was created in the result of irradiation N2 gas using laser plasma EUV radiation pulses. The source was based on a 10J/10ns Nd:YAG (λ = 1064 nm) laser system and a gas puff target. The EUV radiation pulses were collected and focused using a grazing incidence multifoil EUV collector. The emission spectra were measured in the ultraviolet and visible (UV/Vis) range. It was found that the plasma emission lines in the lower region of the UV range are relativley weak. Nonetheless, a part of the spectra contains strong molecular band in the 300 - 430 nm originated from second positive and first negative systems band transitions of nitrogen. These molecular band transitions were identified using a code for study the diatomic molecules, LIFBASE. The vibrational band of Δv = 0 and ±1 transitions were significantly populated than of that with Δv = ±2 and 3 transitions. A comparison of the calculated and measured spectrum is presented. With an assumption of a local thermodynamic equilibrium (LTE), the vibrational temperature was determined from the integrated band intensities with the help of the Boltzmann plot method and compared to the temperature predicted by SPECAIR and LIFBASE simulations. A summary of the results and the variations in the vibrational temperatures was discussed.

  5. EUV and radio spectrum of coronal holes

    Energy Technology Data Exchange (ETDEWEB)

    Chiuderi Drago, F [Osservatorio Astrofisico di Arcetri, Florence (Italy)

    1980-03-01

    From the intensity of 19 EUV lines whose formation temperature anti T ranges from 3 x 10/sup 4/ to 1.4 x 10/sup 6/, two different models of the transition region and corona for the cell-centre and the network are derived. It is shown that both these models give radio brightness temperatures systematically higher than the observed ones. An agreement with radio data can be found only with lines formed at low temperature (anti T < 8.5 x 10/sup 5/) by decreasing the coronal temperature and the emission measure. The possibility of resolving the discrepancy by using different ion abundances has also been investigated with negative results.

  6. TIMED solar EUV experiment: preflight calibration results for the XUV photometer system

    Science.gov (United States)

    Woods, Thomas N.; Rodgers, Erica M.; Bailey, Scott M.; Eparvier, Francis G.; Ucker, Gregory J.

    1999-10-01

    The Solar EUV Experiment (SEE) on the NASA Thermosphere, Ionosphere, and Mesosphere Energetics and Dynamics (TIMED) mission will measure the solar vacuum ultraviolet (VUV) spectral irradiance from 0.1 to 200 nm. To cover this wide spectral range two different types of instruments are used: a grating spectrograph for spectra between 25 and 200 nm with a spectral resolution of 0.4 nm and a set of silicon soft x-ray (XUV) photodiodes with thin film filters as broadband photometers between 0.1 and 35 nm with individual bandpasses of about 5 nm. The grating spectrograph is called the EUV Grating Spectrograph (EGS), and it consists of a normal- incidence, concave diffraction grating used in a Rowland spectrograph configuration with a 64 X 1024 array CODACON detector. The primary calibrations for the EGS are done using the National Institute for Standards and Technology (NIST) Synchrotron Ultraviolet Radiation Facility (SURF-III) in Gaithersburg, Maryland. In addition, detector sensitivity and image quality, the grating scattered light, the grating higher order contributions, and the sun sensor field of view are characterized in the LASP calibration laboratory. The XUV photodiodes are called the XUV Photometer System (XPS), and the XPS includes 12 photodiodes with thin film filters deposited directly on the silicon photodiodes' top surface. The sensitivities of the XUV photodiodes are calibrated at both the NIST SURF-III and the Physikalisch-Technische Bundesanstalt (PTB) electron storage ring called BESSY. The other XPS calibrations, namely the electronics linearity and field of view maps, are performed in the LASP calibration laboratory. The XPS and solar sensor pre-flight calibration results are primarily discussed as the EGS calibrations at SURF-III have not yet been performed.

  7. Compact and Light-Weight Solar Spaceflight Instrument Designs Utilizing Newly Developed Miniature Free-Standing Zone Plates: EUV Radiometer and Limb-Scanning Monochromator

    Science.gov (United States)

    Seely, J. F.; McMullin, D. R.; Bremer, J.; Chang, C.; Sakdinawat, A.; Jones, A. R.; Vest, R.

    2014-12-01

    Two solar instrument designs are presented that utilize newly developed miniature free-standing zone plates having interconnected Au opaque bars and no support membrane resulting in excellent long-term stability in space. Both instruments are based on a zone plate having 4 mm outer diameter and 1 to 2 degree field of view. The zone plate collects EUV radiation and focuses a narrow bandpass through a pinhole aperture and onto a silicon photodiode detector. As a miniature radiometer, EUV irradiance is accurately determined from the zone plate efficiency and the photodiode responsivity that are calibrated at the NIST SURF synchrotron facility. The EUV radiometer is pointed to the Sun and measures the absolute solar EUV irradiance in high time cadence suitable for solar physics and space weather applications. As a limb-scanning instrument in low earth orbit, a miniature zone-plate monochromator measures the extinction of solar EUV radiation by scattering through the upper atmosphere which is a measure of the variability of the ionosphere. Both instruments are compact and light-weight and are attractive for CubeSats and other missions where resources are extremely limited.

  8. Characterization of laser-produced plasma EUV light

    International Nuclear Information System (INIS)

    Mizoguchi, Hakaru; Endo, Akira; Takabayashi, Yuichi; Sasaki, Akira; Komori, Hiroshi; Suganuma, Takashi

    2005-01-01

    Resolution of optical microlithography process becomes smaller and smaller. Wavelength of the light source for these optical lithography reduced from KrF, ArF to F2 to meet the resolution requirement. Recently EUV is spotlighted as promising candidate for next generation lithography light source. This paper summarizes the requirement and studies of experiments and simulation to improve the convention efficiency of EUV light source. (author)

  9. ILT optimization of EUV masks for sub-7nm lithography

    Science.gov (United States)

    Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

    2017-06-01

    The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

  10. First environmental data from the EUV engineering test stand

    Science.gov (United States)

    Klebanoff, Leonard E.; Malinowski, Michael E.; Grunow, Philip A.; Clift, W. Miles; Steinhaus, Chip; Leung, Alvin H.; Haney, Steven J.

    2001-08-01

    The first environmental data from the Engineering Test Stand (ETS) has been collected. Excellent control of high-mass hydrocarbons has been observed. This control is a result of extensive outgas testing of components and materials, vacuum compatible design of the ETS, careful cleaning of parts and pre-baking of cables and sub assemblies where possible, and clean assembly procedures. As a result of the hydrocarbon control, the residual ETS vacuum environment is rich in water vapor. Analysis of witness plate data indicates that the ETS environment does not pose a contamination risk to the optics in the absence of EUV irradiation. However, with EUV exposure, the water rich environment can lead to EUV- induced water oxidation of the Si-terminated Mo/Si optics. Added ethanol can prevent optic oxidation, allowing carbon growth via EUV cracking of low-level residual hydrocarbons to occur. The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable.

  11. Classification and printability of EUV mask defects from SEM images

    Science.gov (United States)

    Cho, Wonil; Price, Daniel; Morgan, Paul A.; Rost, Daniel; Satake, Masaki; Tolani, Vikram L.

    2017-10-01

    Classification and Printability of EUV Mask Defects from SEM images EUV lithography is starting to show more promise for patterning some critical layers at 5nm technology node and beyond. However, there still are many key technical obstacles to overcome before bringing EUV Lithography into high volume manufacturing (HVM). One of the greatest obstacles is manufacturing defect-free masks. For pattern defect inspections in the mask-shop, cutting-edge 193nm optical inspection tools have been used so far due to lacking any e-beam mask inspection (EBMI) or EUV actinic pattern inspection (API) tools. The main issue with current 193nm inspection tools is the limited resolution for mask dimensions targeted for EUV patterning. The theoretical resolution limit for 193nm mask inspection tools is about 60nm HP on masks, which means that main feature sizes on EUV masks will be well beyond the practical resolution of 193nm inspection tools. Nevertheless, 193nm inspection tools with various illumination conditions that maximize defect sensitivity and/or main-pattern modulation are being explored for initial EUV defect detection. Due to the generally low signal-to-noise in the 193nm inspection imaging at EUV patterning dimensions, these inspections often result in hundreds and thousands of defects which then need to be accurately reviewed and dispositioned. Manually reviewing each defect is difficult due to poor resolution. In addition, the lack of a reliable aerial dispositioning system makes it very challenging to disposition for printability. In this paper, we present the use of SEM images of EUV masks for higher resolution review and disposition of defects. In this approach, most of the defects detected by the 193nm inspection tools are first imaged on a mask SEM tool. These images together with the corresponding post-OPC design clips are provided to KLA-Tencor's Reticle Decision Center (RDC) platform which provides ADC (Automated Defect Classification) and S2A (SEM

  12. Photodissociation of aligned CH3I and C6H3F2I molecules probed with time-resolved Coulomb explosion imaging by site-selective extreme ultraviolet ionization.

    Science.gov (United States)

    Amini, Kasra; Savelyev, Evgeny; Brauße, Felix; Berrah, Nora; Bomme, Cédric; Brouard, Mark; Burt, Michael; Christensen, Lauge; Düsterer, Stefan; Erk, Benjamin; Höppner, Hauke; Kierspel, Thomas; Krecinic, Faruk; Lauer, Alexandra; Lee, Jason W L; Müller, Maria; Müller, Erland; Mullins, Terence; Redlin, Harald; Schirmel, Nora; Thøgersen, Jan; Techert, Simone; Toleikis, Sven; Treusch, Rolf; Trippel, Sebastian; Ulmer, Anatoli; Vallance, Claire; Wiese, Joss; Johnsson, Per; Küpper, Jochen; Rudenko, Artem; Rouzée, Arnaud; Stapelfeldt, Henrik; Rolles, Daniel; Boll, Rebecca

    2018-01-01

    We explore time-resolved Coulomb explosion induced by intense, extreme ultraviolet (XUV) femtosecond pulses from a free-electron laser as a method to image photo-induced molecular dynamics in two molecules, iodomethane and 2,6-difluoroiodobenzene. At an excitation wavelength of 267 nm, the dominant reaction pathway in both molecules is neutral dissociation via cleavage of the carbon-iodine bond. This allows investigating the influence of the molecular environment on the absorption of an intense, femtosecond XUV pulse and the subsequent Coulomb explosion process. We find that the XUV probe pulse induces local inner-shell ionization of atomic iodine in dissociating iodomethane, in contrast to non-selective ionization of all photofragments in difluoroiodobenzene. The results reveal evidence of electron transfer from methyl and phenyl moieties to a multiply charged iodine ion. In addition, indications for ultrafast charge rearrangement on the phenyl radical are found, suggesting that time-resolved Coulomb explosion imaging is sensitive to the localization of charge in extended molecules.

  13. Actinic inspection of multilayer defects on EUV masks

    International Nuclear Information System (INIS)

    Barty, A; Liu, Y; Gullikson, E; Taylor, J S; Wood, O

    2005-01-01

    The production of defect-free mask blanks, and the development of techniques for inspecting and qualifying EUV mask blanks, remains a key challenge for EUV lithography. In order to ensure a reliable supply of defect-free mask blanks, it is necessary to develop techniques to reliably and accurately detect defects on un-patterned mask blanks. These inspection tools must be able to accurately detect all critical defects whilst simultaneously having the minimum possible false-positive detection rate. There continues to be improvement in high-speed non-actinic mask blank inspection tools, and it is anticipated that these tools can and will be used by industry to qualify EUV mask blanks. However, the outstanding question remains one of validating that non-actinic inspection techniques are capable of detecting all printable EUV defects. To qualify the performance of non-actinic inspection tools, a unique dual-mode EUV mask inspection system has been installed at the Advanced Light Source (ALS) synchrotron at Lawrence Berkeley National Laboratory. In high-speed inspection mode, whole mask blanks are scanned for defects using 13.5-nm wavelength light to identify and map all locations on the mask that scatter a significant amount of EUV light. In imaging, or defect review mode, a zone plate is placed in the reflected beam path to image a region of interest onto a CCD detector with an effective resolution on the mask of 100-nm or better. Combining the capabilities of the two inspection tools into one system provides the unique capability to determine the coordinates of native defects that can be used to compare actinic defect inspection with visible light defect inspection tools under commercial development, and to provide data for comparing scattering models for EUV mask defects

  14. Spectrometer system for diffuse extreme ultraviolet radiation

    Science.gov (United States)

    Labov, Simon E.

    1989-01-01

    A unique grazing incidence spectrometer system has been designed to study diffuse line emission between 80 and 650 A with 10-30 A resolution. The minimum detectable emission line strength during a 5-min observation ranges from 100-2000 ph/sq cm sec str. The instrument uses mechanically ruled reflection gratings placed in front of a linear array of mirrors. These mirrors focus the spectral image on microchannel plate detectors located behind thin filters. The field of view is 40 min of arc by 15 deg, and there is no spatial imaging. This instrument has been fabricated, calibrated, and successfully flown on a sounding rocket to observe the astronomical background radiation.

  15. Laser techniques for extreme-ultraviolet spectroscopy

    International Nuclear Information System (INIS)

    Harris, S.E.; Young, J.F.; Caro, R.G.; Falcone, R.W.; Holmgren, D.E.; Walker, D.J.; Wang, J.C.; Rothenberg, J.E.; Willison, J.R.

    1983-06-01

    In this paper we describe several techniques for using lasers to study core-excited energy levels in the spectral region between 10 eV and 100 eV. We are particularly interested in levels that are metastable against autoionization and, in some cases, against both autoionization and radiation

  16. Design decisions from the history of the EUVE science payload

    Science.gov (United States)

    Marchant, W.

    1993-01-01

    Some of the design issues that arose during the development of the EUVE science payload and solutions to the problems involved are examined. In particular, attention is given to the use of parallel and serial busses, the selection of the the ROM approach for software storage and execution, implementation of memory error detection and correction, and the selection of command structures. The early design decisions paid off in the timely delivery of the scientific payload and in the successful completion of the survey phase of the EUVE science mission.

  17. Solar ultraviolet hazards

    International Nuclear Information System (INIS)

    Azmah Ali

    1995-01-01

    The paper discussed the following subjects: the sources of ultraviolet radiation, solar ultraviolet radiation definition, effects of over exposure to solar ultraviolet radiation, exposure limits and radiation protection of this radiation

  18. Multichannel euv spectroscopy of high temperature plasmas

    International Nuclear Information System (INIS)

    Fonck, R.J.

    1983-11-01

    Spectroscopy of magnetically confined high temperature plasmas in the visible through x-ray spectral ranges deals primarily with the study of impurity line radiation or continuum radiation. Detailed knowledge of absolute intensities, temporal behavior, and spatial distributions of the emitted radiation is desired. As tokamak facilities become more complex, larger, and less accessible, there has been an increased emphasis on developing new instrumentation to provide such information in a minimum number of discharges. The availability of spatially-imaging detectors for use in the vacuum ultraviolet region (especially the intensified photodiode array) has generated the development of a variety of multichannel spectrometers for applications on tokamak facilities

  19. Mask Materials and Designs for Extreme Ultra Violet Lithography

    Science.gov (United States)

    Kim, Jung Sik; Ahn, Jinho

    2018-03-01

    Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

  20. The EUV Spectrum of Sunspot Plumes Observed by SUMER on ...

    Indian Academy of Sciences (India)

    tribpo

    Abstract. We present results from sunspot observations obtained by. SUMER on SOHO. In sunspot plumes the EUV spectrum differs from the quiet Sun; continua are observed with different slopes and intensities; emission lines from molecular hydrogen and many unidentified species indicate unique plasma conditions ...

  1. Sub 20nm particle inspection on EUV mask blanks

    NARCIS (Netherlands)

    Bussink, P.G.W.; Volatier, J.B.; Walle, P. van der; Fritz, E.C.; Donck, J.C.J. van der

    2016-01-01

    The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The detection principle of this system is dark-field microscopy. The performance of the system has been improved via model-based design. Through our model of the scattering

  2. Benchmarking EUV mask inspection beyond 0.25 NA

    International Nuclear Information System (INIS)

    Goldberg, Kenneth A.; Mochi, Iacopo; Anderson, Erik H.; Rekawa, Seno B.; Kemp, Charles D.; Huh, S.; Han, H.-S.; Naulleau, P.; Gunion, R.F.

    2008-01-01

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is an EUV-wavelength mask inspection microscope designed for direct aerial image measurements, and pre-commercial EUV mask research. Operating on a synchrotron bending magnet beamline, the AIT uses an off-axis Fresnel zoneplate lens to project a high-magnification EUV image directly onto a CCD camera. We present the results of recent system upgrades that have improved the imaging resolution, illumination uniformity, and partial coherence. Benchmarking tests show image contrast above 75% for 100-nm mask features, and significant improvements and across the full range of measured sizes. The zoneplate lens has been replaced by an array of user-selectable zoneplates with higher magnification and NA values up to 0.0875, emulating the spatial resolution of a 0.35-NA 4 x EUV stepper. Illumination uniformity is above 90% for mask areas 2-(micro)m-wide and smaller. An angle-scanning mirror reduces the high coherence of the synchrotron beamline light source giving measured σ values of approximately 0.125 at 0.0875 NA

  3. Development of high power pumping system for capillary discharge EUV laser

    International Nuclear Information System (INIS)

    Sakai, Yusuke; Komatsu, Takanori; Watanabe, Masato; Okino, Akitoshi; Hotta, Eiki

    2008-01-01

    Development of high power pumping system for capillary discharge soft X-ray laser is reported. The pulsed power system consists of a 2.2 μF LC generator, a 2:54 step-up transformer and a 3 nF water capacitor. Taking advantage of high efficiency configuration, step-up ratio of water capacitor voltage to LC generator initial voltage is about 40 times. Consequently, obtained water capacitor voltage reaches about 450 kV when LC generator was charged to 12.5 kV. As a consequent, possibility of charging a water capacitor to 1 MV is demonstrated. With this extremely compact system, discharge current could be increased to nearly 100 kA through moderately long capillary, which leads to generation of high-density and high-temperature plasma column in order to realize EUV laser. (author)

  4. Ultraviolet radiation

    International Nuclear Information System (INIS)

    Hawk, J.

    1986-01-01

    Ultraviolet radiation (UVR) from the sun or artificial sources is reflected or transmitted at the surface of the skin, about 5% of normally incident rays being directly reflected. The transmitted fraction is scattered, photochemically absorbed or dissipated as heat within the skin, or passes from it to contribute to the variable total amount of reflected and transmitted radiation. The UVR absorbers in skin are not definitely known, but DNA is a definite target and probably lipoprotein membranes, RNA, proteins, mucopolysaccharides, elastin and collagen. Photochemical or free radical damage to absorber or nearby organelles leads to pharmacological, ultrastructural, histological and clinical changes. Most frequent DNA damage is pyrimidine dimer formation, apparently inhibiting cell function and replication. This is largely enzymatically repaired in man in the dark by excision repair, post-replication repair and possible other enzymatic mechanisms, and at least in some organisms by light-induced photoreactivation repair. UVR exposure causes well recognized acute and chronic clinical syndromes in man. These are discussed in this paper

  5. Observations of Local ISM Emission with the Berkeley EUV/FUV Shuttle Telescope

    Science.gov (United States)

    Martin, C.; Bowyer, S.

    1984-01-01

    The Berkeley extreme ultraviolet/far ultraviolet shuttle telescope (BEST) will be launched on the Space Shuttle as part of the NASA UVX project. The Berkeley spectrometer will make observations of the cosmic diffuse background in the 600 to 1900 A band, with a spectral resolution of 10 A. The sensitivity and spectral resolution of the instrument make it ideal for the study of components of the interstellar medium in the 10 to the 4th power to 10 to the 6th power K range.

  6. Mask characterization for CDU budget breakdown in advanced EUV lithography

    Science.gov (United States)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2012-11-01

    As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget

  7. Optical, UV, and EUV Oscillations of SS Cygni in Outburst

    Science.gov (United States)

    Mauche, Christopher W.

    2004-07-01

    I provide a review of observations in the optical, UV (HST), and EUV (EUVE and Chandra LETG) of the rapid periodic oscillations of nonmagnetic, disk-accreting, high mass-accretion rate cataclysmic variables (CVs), with particular emphasis on the dwarf nova SS Cyg in outburst. In addition, I drawn attention to a correlation, valid over nearly six orders of magnitude in frequency, between the frequencies of the quasi-periodic oscillations (QPOs) of white dwarf, neutron star, and black hole binaries. This correlation identifies the high frequency quasi-coherent oscillations (so-called ``dwarf nova oscillations'') of CVs with the kilohertz QPOs of low mass X-ray binaries (LMXBs), and the low frequency and low coherence QPOs of CVs with the horizontal branch oscillations (or the broad noise component identified as such) of LMXBs. Assuming that the same mechanisms produce the QPOs of white dwarf, neutron star, and black hole binaries, this correlation has important implications for QPO models.

  8. Negative-tone imaging with EUV exposure for 14nm hp and beyond

    Science.gov (United States)

    Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Fujimori, Toru; Momota, Makoto; Goto, Takahiro

    2015-03-01

    Manipulation of dissolution properties by changing organic solvent developer and rinse material provides a novel technology to obtain fine pattern beyond the limitation of imaging system based on alkaline developer. QCM study showed no swelling character in negative-tone imaging (NTI) process even for current developer of n-butyl acetate (nBA). Actually, NTI process has shown advantages on resolution and line-width roughness (LWR) in loose pitch around 30 ~ 45 nm hp as a consequence of its non-swelling character. On the other hand, bridge and collapse limited its resolution below 20 nm hp, indicating that non-negligible amount of swelling still exists for tight pitch resolution. We investigated effects of solubility parameter of organic solvents on resolution below 20 nm hp. A bridge was reduced with a decrease in the solubility parameter dp from nBA. On the other hand, much lower dp caused film remaining due to its extremely slow Rmax. Based on these results, we newly developed FN-DP301 containing organic solvent with smaller dp than nBA. Although rinse solvent gave negligible effects on bridge, there is a clear improvement on pattern collapse only in case of using new rinse solvent of FN-RP311. Lithographic performances of NTI process using nBA and FN-DP301 together with the other organic solvents were described in this paper under exposures with an E-beam and a EUV light. It is emphasized that 14 nm hp resolution was obtained only using FN-DP301 as a developer and FN-RP311 as a rinse under E-beam exposure. NTI showed 43% faster photospeed in comparison with PTI at 16 nm hp, indicating that NTI is applicable to obtain high throughput with maintaining resolution. In addition, sub-20 nm trench was obtained using NTI without bridge under EUV exposure, all of which are attributed to the low swelling character of NTI process. Similarly, NTI was able to print 20 nm dots using NXE:3100 with only a little peeling. Conversely CH patterning was significantly worse with NTI

  9. Performance of one hundred watt HVM LPP-EUV source

    Science.gov (United States)

    Mizoguchi, Hakaru; Nakarai, Hiroaki; Abe, Tamotsu; Nowak, Krzysztof M.; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Hori, Tsukasa; Kodama, Takeshi; Shiraishi, Yutaka; Yanagida, Tatsuya; Soumagne, Georg; Yamada, Tsuyoshi; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi

    2015-03-01

    We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as: combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting, and mitigation with magnetic field, have been developed in Gigaphoton Inc. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. Based on these data we are developing first practical source for HVM - "GL200E". This data means 250W EUV power will be able to realize around 20kW level pulsed CO2 laser. We have reported engineering data from our recent test such around 43W average clean power, CE=2.0%, with 100kHz operation and other data 19). We have already finished preparation of higher average power CO2 laser more than 20kW at output power cooperate with Mitsubishi Electric Corporation 14). Recently we achieved 92W with 50kHz, 50% duty cycle operation 20). We have reported component technology progress of EUV light source system. We report promising experimental data and result of simulation of magnetic mitigation system in Proto #1 system. We demonstrated several data with Proto #2 system: (1) emission data of 140W in burst under 70kHz 50% duty cycle during 10 minutes. (2) emission data of 118W in burst under 60kHz 70% duty cycle during 10 minutes. (3) emission data of 42W in burst under 20kHz 50% duty cycle (10000pls/0.5ms OFF) during 3 hours (110Mpls). Also we report construction of Pilot #1 system. Final target is week level operation with 250W EUV power with CE=4%, more than 27kW CO2 laser power by the end of Q2 of 2015.

  10. TESIS experiment on EUV imaging spectroscopy of the Sun

    Science.gov (United States)

    Kuzin, S. V.; Bogachev, S. A.; Zhitnik, I. A.; Pertsov, A. A.; Ignatiev, A. P.; Mitrofanov, A. M.; Slemzin, V. A.; Shestov, S. V.; Sukhodrev, N. K.; Bugaenko, O. I.

    2009-03-01

    TESIS is a set of solar imaging instruments in development by the Lebedev Physical Institute of the Russian Academy of Science, to be launched aboard the Russian spacecraft CORONAS-PHOTON in December 2008. The main goal of TESIS is to provide complex observations of solar active phenomena from the transition region to the inner and outer solar corona with high spatial, spectral and temporal resolution in the EUV and Soft X-ray spectral bands. TESIS includes five unique space instruments: the MgXII Imaging Spectroheliometer (MISH) with spherical bent crystal mirror, for observations of the Sun in the monochromatic MgXII 8.42 Å line; the EUV Spectoheliometer (EUSH) with grazing incidence difraction grating, for the registration of the full solar disc in monochromatic lines of the spectral band 280-330 Å; two Full-disk EUV Telescopes (FET) with multilayer mirrors covering the band 130-136 and 290-320 Å; and the Solar EUV Coronagraph (SEC), based on the Ritchey-Chretien scheme, to observe the inner and outer solar corona from 0.2 to 4 solar radii in spectral band 290-320 Å. TESIS experiment will start at the rising phase of the 24th cycle of solar activity. With the advanced capabilities of its instruments, TESIS will help better understand the physics of solar flares and high-energy phenomena and provide new data on parameters of solar plasma in the temperature range 10-10K. This paper gives a brief description of the experiment, its equipment, and its scientific objectives.

  11. The Diagnostics of the kappa-Distributions from EUV Spectra

    Czech Academy of Sciences Publication Activity Database

    Dzifčáková, Elena; Kulinová, Alena

    2010-01-01

    Roč. 263, 1-2 (2010), s. 25-41 ISSN 0038-0938 R&D Projects: GA ČR GA205/09/1705 Grant - others:VEGA(SK) 1/0069/08 Institutional research plan: CEZ:AV0Z10030501 Keywords : EUV spectra * non- thermal distributions * plasma diagnostics Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics Impact factor: 3.386, year: 2010

  12. EUV source development for high-volume chip manufacturing tools

    Science.gov (United States)

    Stamm, Uwe; Yoshioka, Masaki; Kleinschmidt, Jürgen; Ziener, Christian; Schriever, Guido; Schürmann, Max C.; Hergenhan, Guido; Borisov, Vladimir M.

    2007-03-01

    Xenon-fueled gas discharge produced plasma (DPP) sources were integrated into Micro Exposure Tools already in 2004. Operation of these tools in a research environment gave early learning for the development of EUV sources for Alpha and Beta-Tools. Further experiments with these sources were performed for basic understanding on EUV source technology and limits, especially the achievable power and reliability. The intermediate focus power of Alpha-Tool sources under development is measured to values above 10 W. Debris mitigation schemes were successfully integrated into the sources leading to reasonable collector mirror lifetimes with target of 10 billion pulses due to the effective debris flux reduction. Source collector mirrors, which withstand the radiation and temperature load of Xenon-fueled sources, have been developed in cooperation with MediaLario Technologies to support intermediate focus power well above 10 W. To fulfill the requirements for High Volume chip Manufacturing (HVM) applications, a new concept for HVM EUV sources with higher efficiency has been developed at XTREME technologies. The discharge produced plasma (DPP) source concept combines the use of rotating disk electrodes (RDE) with laser exited droplet targets. The source concept is called laser assisted droplet RDE source. The fuel of these sources has been selected to be Tin. The conversion efficiency achieved with the laser assisted droplet RDE source is 2-3x higher compared to Xenon. Very high pulse energies well above 200 mJ / 2π sr have been measured with first prototypes of the laser assisted droplet RDE source. If it is possible to maintain these high pulse energies at higher repetition rates a 10 kHz EUV source could deliver 2000 W / 2π sr. According to the first experimental data the new concept is expected to be scalable to an intermediate focus power on the 300 W level.

  13. Inner shell transitions of BrI in the EUV

    Energy Technology Data Exchange (ETDEWEB)

    Mazzoni, M [Florence Univ. (Italy). Ist. di Astronomia; Pettini, M [Osservatorio Astrofisico di Arcetri, Florence (Italy)

    1981-10-12

    The EUV line spectrum originating from transitions of the inner 3d shell of neutral atomic bromine has been observed in absorption. Fano parameters have been derived for the three autoionized resonances nd/sup 10/(n + 1)s/sup 2/(n + 1)p/sup 5/ /sup 2/P-nd/sup 9/(n + 1)s/sup 2/(n + 1)p/sup 62/D observed in both bromine (n = 3) and iodine (n = 4) spectra.

  14. Solar Tornadoes Triggered by Interaction between Filaments and EUV Jets

    International Nuclear Information System (INIS)

    Chen, Huadong; Zhang, Jun; Ma, Suli; Yan, Xiaoli; Xue, Jianchao

    2017-01-01

    We investigate the formations and evolutions of two successive solar tornadoes in/near AR 12297 during 2015 March 19–20. Recurrent EUV jets close to two filaments were detected along a large-scale coronal loop prior to the appearances of the tornadoes. Under the disturbances from the activities, the filaments continually ascended and finally interacted with the loops tracked by the jets. Subsequently, the structures of the filaments and the loop were merged together, probably via magnetic reconnections, and formed tornado-like structures with a long spiral arm. Our observations suggest that solar tornadoes can be triggered by the interaction between filaments and nearby coronal jets, which has rarely been reported before. At the earlier development phase of the first tornado, about 30 small-scale sub-jets appeared in the tornado’s arm, accompanied by local EUV brightenings. They have an ejection direction approximately vertical to the axis of the arm and a typical maximum speed of ∼280 km s −1 . During the ruinations of the two tornadoes, fast plasma outflows from the strong EUV brightenings inside tornadoes are observed, in company with the untangling or unwinding of the highly twisted tornado structures. These observational features indicate that self reconnections probably occurred between the tangled magnetic fields of the tornadoes and resulted in the rapid disintegrations and disappearances of the tornadoes. According to the reconnection theory, we also derive the field strength of the tornado core to be ∼8 G.

  15. Solar Tornadoes Triggered by Interaction between Filaments and EUV Jets

    Science.gov (United States)

    Chen, Huadong; Zhang, Jun; Ma, Suli; Yan, Xiaoli; Xue, Jianchao

    2017-05-01

    We investigate the formations and evolutions of two successive solar tornadoes in/near AR 12297 during 2015 March 19-20. Recurrent EUV jets close to two filaments were detected along a large-scale coronal loop prior to the appearances of the tornadoes. Under the disturbances from the activities, the filaments continually ascended and finally interacted with the loops tracked by the jets. Subsequently, the structures of the filaments and the loop were merged together, probably via magnetic reconnections, and formed tornado-like structures with a long spiral arm. Our observations suggest that solar tornadoes can be triggered by the interaction between filaments and nearby coronal jets, which has rarely been reported before. At the earlier development phase of the first tornado, about 30 small-scale sub-jets appeared in the tornado’s arm, accompanied by local EUV brightenings. They have an ejection direction approximately vertical to the axis of the arm and a typical maximum speed of ˜280 km s-1. During the ruinations of the two tornadoes, fast plasma outflows from the strong EUV brightenings inside tornadoes are observed, in company with the untangling or unwinding of the highly twisted tornado structures. These observational features indicate that self reconnections probably occurred between the tangled magnetic fields of the tornadoes and resulted in the rapid disintegrations and disappearances of the tornadoes. According to the reconnection theory, we also derive the field strength of the tornado core to be ˜8 G.

  16. Solar Tornadoes Triggered by Interaction between Filaments and EUV Jets

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Huadong; Zhang, Jun; Ma, Suli [Key Laboratory of Solar Activity, National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China); Yan, Xiaoli [Yunnan Observatories, Chinese Academy of Sciences, Kunming 650011 (China); Xue, Jianchao, E-mail: hdchen@nao.cas.cn, E-mail: zjun@nao.cas.cn [Key Laboratory for Dark Matter and Space Science, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China)

    2017-05-20

    We investigate the formations and evolutions of two successive solar tornadoes in/near AR 12297 during 2015 March 19–20. Recurrent EUV jets close to two filaments were detected along a large-scale coronal loop prior to the appearances of the tornadoes. Under the disturbances from the activities, the filaments continually ascended and finally interacted with the loops tracked by the jets. Subsequently, the structures of the filaments and the loop were merged together, probably via magnetic reconnections, and formed tornado-like structures with a long spiral arm. Our observations suggest that solar tornadoes can be triggered by the interaction between filaments and nearby coronal jets, which has rarely been reported before. At the earlier development phase of the first tornado, about 30 small-scale sub-jets appeared in the tornado’s arm, accompanied by local EUV brightenings. They have an ejection direction approximately vertical to the axis of the arm and a typical maximum speed of ∼280 km s{sup −1}. During the ruinations of the two tornadoes, fast plasma outflows from the strong EUV brightenings inside tornadoes are observed, in company with the untangling or unwinding of the highly twisted tornado structures. These observational features indicate that self reconnections probably occurred between the tangled magnetic fields of the tornadoes and resulted in the rapid disintegrations and disappearances of the tornadoes. According to the reconnection theory, we also derive the field strength of the tornado core to be ∼8 G.

  17. High-Resolution EUV Spectroscopy of White Dwarfs

    Science.gov (United States)

    Kowalski, Michael P.; Wood, K. S.; Barstow, M. A.

    2014-01-01

    We compare results of high-resolution EUV spectroscopic measurements of the isolated white dwarf G191-B2B and the binary system Feige 24 obtained with the J-PEX (Joint Plasmadynamic Experiment), which was sponsored jointly by the U.S. Naval Research Laboratory and NASA. J-PEX delivers the world's highest resolution in EUV and does so at high effective area (e.g., more effective area in a sounding rocket than is available with Chandra at adjacent energies, but in a waveband Chandra cannot reach). The capability J-PEX represents is applicable to the astrophysics of hot plasmas in stellar coronae, white dwarfs and the ISM. G191-B2B and Feige 24 are quite distinct hot white dwarf systems having in common that they are bright in the portion of the EUV where He emission features and edges occur, hence they can be exploited to probe both the stellar atmosphere and the ISM, separating those components by model-fitting that sums over all relevant (He) spectral features in the band. There is evidence from these fits that atmospheric He is being detected but the result is more conservatively cast as a pair of upper limits. We discuss how longer duration satellite observations with the same instrumentation could increase exposure to detect atmospheric He in these and other nearby hot white dwarfs.

  18. Simulated solar wind plasma interaction with the Martian exosphere: influence of the solar EUV flux on the bow shock and the magnetic pile-up boundary

    Directory of Open Access Journals (Sweden)

    R. Modolo

    2006-12-01

    Full Text Available The solar wind plasma interaction with the Martian exosphere is investigated by means of 3-D multi-species hybrid simulations. The influence of the solar EUV flux on the bow shock and the magnetic pile-up boundary is examined by comparing two simulations describing the two extreme states of the solar cycle. The hybrid formalism allows a kinetic description of each ions species and a fluid description of electrons. The ionization processes (photoionization, electron impact and charge exchange are included self-consistently in the model where the production rate is computed locally, separately for each ionization act and for each neutral species. The results of simulations are in a reasonable agreement with the observations made by Phobos 2 and Mars Global Surveyor spacecraft. The position of the bow shock and the magnetic pile-up boundary is weakly dependent of the solar EUV flux. The motional electric field creates strong asymmetries for the two plasma boundaries.

  19. Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons

    Science.gov (United States)

    Pollentier, I.; Tirumala Venkata, A.; Gronheid, R.

    2014-04-01

    EUV photoresists are considered as a potential source of optics contamination, since they introduce irradiation-induced outgassing in the EUV vacuum environment. Therefore, before these resists can be used on e.g. ASML NXE:3100 or NXE:3300, they need to be tested in dedicated equipment according to a well-defined procedure, which is based on exposing a witness sample (WS) in the vicinity of a simultaneously exposed resist as it outgasses. Different system infrastructures are used at multiple sites (e.g. NIST, CNSE, Sematech, EIDEC, and imec) and were calibrated to each other by a detailed test plan. Despite this detailed tool qualifications, a first round robin comparison of identical materials showed inconsistent outgas test results, and required further investigation by a second round robin. Since the resist exposure mode is different at the various locations (some sites are using EUV photons while others use E-gun electrons), this difference has always a point of concern for variability of test results. In this work we compare the outgas test results from EUV photon and electron exposure using the resist materials of the second round robin. Since the imec outgas tester allows both exposure methods on the resist, a within-system comparison is possible and showed limited variation between photon and electron exposure mode. Therefore the system-to-system variability amongst the different outgas test sites is expected to be related to other parameters than the electron/photon exposure mode. Initial work showed that the variability might be related to temperature, E-gun emission excursion, and/or residual outgassing scaled by different wafer areas at the different sites.

  20. Surface modification by EUV laser beam based on capillary discharge

    Czech Academy of Sciences Publication Activity Database

    Frolov, Oleksandr; Koláček, Karel; Schmidt, Jiří; Štraus, Jaroslav; Prukner, Václav; Shukurov, A.

    -, č. 58 (2011), s. 484-487 ISSN 2010-376X. [International Conference on Fusion and Plasma Physics. Bali, Indonésie, 26.10.2011-28.10.2011] R&D Projects: GA AV ČR KAN300100702; GA MŠk LA08024; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z20430508 Keywords : soft x-ray * EUV * laser * radiation * source * capillary * discharge * plasma * ablation * surface modification Subject RIV: BL - Plasma and Gas Discharge Physics http://www.waset.org/journals/waset/v58/v58-99.pdf

  1. EUV-angle resolved scatter (EUV-ARS): a new tool for the characterization of nanometre structures

    Science.gov (United States)

    Fernández Herrero, Analía.; Mentzel, Heiko; Soltwisch, Victor; Jaroslawzew, Sina; Laubis, Christian; Scholze, Frank

    2018-03-01

    The advance of the semiconductor industry requires new metrology methods, which can deal with smaller and more complex nanostructures. Particularly for inline metrology a rapid, sensitive and non destructive method is needed. Small angle X-ray scattering under grazing incidence has already been investigated for this application and delivers significant statistical information which tracks the profile parameters as well as their variations, i.e. roughness. However, it suffers from the elongated footprint at the sample. The advantage of EUV radiation, with its longer wavelengths, is that larger incidence angles can be used, resulting in a significant reduction of the beam footprint. Targets with field sizes of 100 μm and smaller are accessible with our experimental set-up. We present a new experimental tool for the measurement of small structures based on the capabilities of soft X-ray and EUV scatterometry at the PTB soft X-ray beamline at the electron storage ring BESSY II. PTB's soft X-ray radiometry beamline uses a plane grating monochromator, which covers the spectral range from 0.7 nm to 25 nm and was especially designed to provide highly collimated radiation. An area detector covers the scattered radiation from a grazing exit angle up to an angle of 30° above the sample horizon and the fluorescence emission can be detected with an energy dispersive X-ray silicon drift detector. In addition, the sample can be rotated and linearly moved in vacuum. This new set-up will be used to explore the capabilities of EUV-scatterometry for the characterization of nanometre-sized structures.

  2. Avoiding unstable regions in the design space of EUV mirror systems comprising high-order aspheric surfaces

    NARCIS (Netherlands)

    Marinescu, O.; Bociort, F.; Braat, J.

    2004-01-01

    When Extreme Ultraviolet mirror systems having several high-order aspheric surfaces are optimized, the configurations often enter into highly unstable regions of the parameter space. Small changes of system parameters lead then to large changes in ray paths, and therefore optimization algorithms

  3. EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV?

    Science.gov (United States)

    Gabor, Allen H.; Brendler, Andrew C.; Brunner, Timothy A.; Chen, Xuemei; Culp, James A.; Levinson, Harry J.

    2018-03-01

    The relationship between edge placement error, semiconductor design-rule determination and predicted yield in the era of EUV lithography is examined. This paper starts with the basics of edge placement error and then builds up to design-rule calculations. We show that edge placement error (EPE) definitions can be used as the building blocks for design-rule equations but that in the last several years the term "EPE" has been used in the literature to refer to many patterning errors that are not EPE. We then explore the concept of "Good Fields"1 and use it predict the n-sigma value needed for design-rule determination. Specifically, fundamental yield calculations based on the failure opportunities per chip are used to determine at what n-sigma "value" design-rules need to be tested to ensure high yield. The "value" can be a space between two features, an intersect area between two features, a minimum area of a feature, etc. It is shown that across chip variation of design-rule important values needs to be tested at sigma values between seven and eight which is much higher than the four-sigma values traditionally used for design-rule determination. After recommending new statistics be used for design-rule calculations the paper examines the impact of EUV lithography on sources of variation important for design-rule calculations. We show that stochastics can be treated as an effective dose variation that is fully sampled across every chip. Combining the increased within chip variation from EUV with the understanding that across chip variation of design-rule important values needs to not cause a yield loss at significantly higher sigma values than have traditionally been looked at, the conclusion is reached that across-wafer, wafer-to-wafer and lot-to-lot variation will have to overscale for any technology introducing EUV lithography where stochastic noise is a significant fraction of the effective dose variation. We will emphasize stochastic effects on edge placement

  4. Integral characteristics of spectra of ions important for EUV lithography

    International Nuclear Information System (INIS)

    Karazija, R; Kucas, S; Momkauskaite, A

    2006-01-01

    The emission spectrum corresponding to the 4p 5 4d N+1 + 4p 6 4d N-1 4f → 4p 6 4d N transition array is concentrated in a narrow interval of wavelengths. That is due to the existence of an approximate selection rule and quenching of some lines by configuration mixing. Thus such emission of elements near Z = 50 is considered to be the main candidate for the EUV lithography source at λ = 13.5 nm. In the present work the regularities of these transition arrays are considered using their integral characteristics: average energy, total line strength, variance and interval of array containing some part of the total transition probability. Calculations for various ions of elements In, Sn, Sb, Te, I and Xe have been performed in a two-configuration pseudorelativistic approximation, which describes fairly well the main features of the spectra. The variation in the values of the main integral characteristics of the spectra with atomic number and ionization degree gives the possibility of comparing quantitatively the suitability of the emission of various ions for EUV lithography

  5. Uncertainties in (E)UV model atmosphere fluxes

    Science.gov (United States)

    Rauch, T.

    2008-04-01

    Context: During the comparison of synthetic spectra calculated with two NLTE model atmosphere codes, namely TMAP and TLUSTY, we encounter systematic differences in the EUV fluxes due to the treatment of level dissolution by pressure ionization. Aims: In the case of Sirius B, we demonstrate an uncertainty in modeling the EUV flux reliably in order to challenge theoreticians to improve the theory of level dissolution. Methods: We calculated synthetic spectra for hot, compact stars using state-of-the-art NLTE model-atmosphere techniques. Results: Systematic differences may occur due to a code-specific cutoff frequency of the H I Lyman bound-free opacity. This is the case for TMAP and TLUSTY. Both codes predict the same flux level at wavelengths lower than about 1500 Å for stars with effective temperatures (T_eff) below about 30 000 K only, if the same cutoff frequency is chosen. Conclusions: The theory of level dissolution in high-density plasmas, which is available for hydrogen only should be generalized to all species. Especially, the cutoff frequencies for the bound-free opacities should be defined in order to make predictions of UV fluxes more reliable.

  6. Observations and predictions of EUV emission from classical novae

    International Nuclear Information System (INIS)

    Starrfield, S.; Truran, J.W.; Sparks, W.M.; Krautter, J.

    1989-01-01

    Theoretical modeling of novae in outburst predicts that they should be active emitters of radiation both in the EUV and soft X-ray wavelengths twice during the outburst. The first time is very early in the outburst when only an all sky survey can detect them. This period lasts only a few hours. They again become bright EUV and soft X-ray emitters late in the outburst when the remnant object becomes very hot and is still luminous. The predictions imply both that a nova can remain very hot for months to years and that the peak temperature at this time strongly depends upon the mass of the white dwarf. It is important to observe novae at these late times because a measurement of both the flux and temperature can provide information about the mass of the white dwarf, the tun-off time scale, and the energy budget of the outburst. We review the existing observations of novae in late stages of their outburst and present some newly obtained data for GQ Mus 1983. We then provide results of new hydrodynamic simulations of novae in outburst and compare the predictions to the observations. 43 refs., 6 figs

  7. Feasibility of compensating for EUV field edge effects through OPC

    Science.gov (United States)

    Maloney, Chris; Word, James; Fenger, Germain L.; Niroomand, Ardavan; Lorusso, Gian F.; Jonckheere, Rik; Hendrickx, Eric; Smith, Bruce W.

    2014-04-01

    As EUV Lithography (EUVL) continues to evolve, it offers a possible solution to the problems of additional masks and lithography steps that drive up the cost and complexity of 193i multiple patterning. EUVL requires a non-telecentric reflective optical system for operation. This requirement causes EUV specific effects such as shadowing. The absorber physically shadows the reflective multilayer (ML) on an EUV reticle resulting in pattern fidelity degradation. To reduce this degradation, a thinner absorber may help. Yet, as the absorber thickness decreases, reflectivity increases in the `dark' region around the image field, resulting in a loss of contrast. The region around the edge of the die on the mask of unpatterned absorber material deposited on top of ML, known as the image border, is also susceptible to undesirable reflections in an ideally dark region. For EUVL to be enabled for high-volume manufacturing (HVM), reticle masking (REMA) blades are used to shield light from the image border to allow for the printing of densely spaced die. When die are printed densely, the image border of each neighboring die will overlap with the edge of a given die resulting in an increase of dose that overexposes features at the edge of the field. This effect is convolved with a fingerprint from the edge of the REMA blades. This phenomenon will be referred to as a field edge effect. One such mitigation strategy that has been investigated to reduce the field edge effect is to fully remove the ML along the image border to ensure that no actinic-EUV radiation can be reflected onto neighboring die. This has proven to suppress the effect, but residual out-of-band radiation still provides additional dose to features near the image border, especially in the corners where three neighboring fields overlap. Measurements of dense contact holes (CHs) have been made along the image border with and without a ML-etched border at IMEC in collaboration with Micron using the ASML NXE:3100. The

  8. Use of gas-phase ethanol to mitigate extreme UV/water oxidation of extreme UV optics

    Science.gov (United States)

    Klebanoff, L. E.; Malinowski, M. E.; Clift, W. M.; Steinhaus, C.; Grunow, P.

    2004-03-01

    A technique is described that uses a gas-phase species to mitigate the oxidation of a Mo/Si multilayer optic caused by either extreme UV (EUV) or electron-induced dissociation of adsorbed water vapor. It is found that introduction of ethanol (EtOH) into a water-rich gas-phase environment inhibits oxidation of the outermost Si layer of the Mo/Si EUV reflective coating. Auger electron spectroscopy, sputter Auger depth profiling, EUV reflectivity, and photocurrent measurements are presented that reveal the EUV/water- and electron/water-derived optic oxidation can be suppressed at the water partial pressures used in the tests (~2×10-7-2×10-5 Torr). The ethanol appears to function differently in two time regimes. At early times, ethanol decomposes on the optic surface, providing reactive carbon atoms that scavenge reactive oxygen atoms before they can oxidize the outermost Si layer. At later times, the reactive carbon atoms form a thin (~5 Å), possibly self-limited, graphitic layer that inhibits water adsorption on the optic surface. .

  9. Rocket-borne EUV-visible emission measurements

    International Nuclear Information System (INIS)

    Schmidtke, G.; Baker, K.D.; Stasek, G.

    1982-01-01

    Two rocket-borne experiments for measuring EUV atmospheric emissions have been conducted. The first measured emissions at 391.4 nm and 557.7 nm, and the second measured emissions in the range from 50 to 650 nm. Height profiles of selected auroral emissions from atomic oxygen at 130.4 nm (exhibiting resonant radiation diffusion) and from atomic oxygen at 557.7 nm, and from neutral and ionized molecular nitrogen are shown. Some details of the recorded spectra are given. In the shorter wavelength regions, emissions from atomic oxygen and nitrogen dominate. Over 140 nm, Lyman-Birge-Hopfield bands, second positive bands and Vegard-Kaplan bands of molecular nitrogen contribute most strongly except for some atomic lines. The Lyman-Birge-Hopfield bands of molecular nitrogen are relatively weak during the auroral arc as compared to the diffuse aurora

  10. Impulsive EUV bursts observed in C IV with OSO-8

    International Nuclear Information System (INIS)

    Grant Athay, R.; White, O.R.; Lites, B.W.

    1980-01-01

    Time sequences of profiles of the lambda 1548 line of C IV containing 51 EUV bursts observed in or near active regions are analyzed to determine the brightness. Doppler shift and line broadening characteristics of the bursts. The bursts have mean lifetimes of approximately 150s, and mean increases in brightness at burst maximum of four-fold as observed with a field of view of 2'' x 20''. Mean burst diameters are estimated to be 3'', or smaller. All but three of the bursts show Doppler shift with velocities sometimes exceeding 75 km s -1 ; 31 are dominated by red shifts and 17 are dominated by blue shifts. Approximately half of the latter group have red-shifted precursors. We interpret the bursts as prominence material, such as surges and coronal rain, moving through the field of view of the spectrometer. (orig.)

  11. Actinic inspection of EUV reticles with arbitrary pattern design

    Science.gov (United States)

    Mochi, Iacopo; Helfenstein, Patrick; Rajeev, Rajendran; Fernandez, Sara; Kazazis, Dimitrios; Yoshitake, Shusuke; Ekinci, Yasin

    2017-10-01

    The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.

  12. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  13. Analysis of a Failed Eclipse Plasma Ejection Using EUV Observations

    Science.gov (United States)

    Tavabi, E.; Koutchmy, S.; Bazin, C.

    2018-03-01

    The photometry of eclipse white-light (W-L) images showing a moving blob is interpreted for the first time together with observations from space with the PRoject for On Board Autonomy (PROBA-2) mission (ESA). An off-limb event seen with great details in W-L was analyzed with the SWAP imager ( Sun Watcher using Active pixel system detector and image Processing) working in the EUV near 174 Å. It is an elongated plasma blob structure of 25 Mm diameter moving above the east limb with coronal loops under. Summed and co-aligned SWAP images are evaluated using a 20-h sequence, in addition to the 11 July, 2010 eclipse W-L images taken from several sites. The Atmospheric Imaging Assembly (AIA) instrument on board the Solar Dynamics Observatory (SDO) recorded the event suggesting a magnetic reconnection near a high neutral point; accordingly, we also call it a magnetic plasmoid. The measured proper motion of the blob shows a velocity up to 12 km s^{-1}. Electron densities of the isolated condensation (cloud or blob or plasmoid) are photometrically evaluated. The typical value is 108 cm^{-3} at r=1.7 R_{⊙}, superposed on a background corona of 107 cm^{-3} density. The mass of the cloud near its maximum brightness is found to be 1.6×10^{13} g, which is typically 0.6×10^{-4} of the overall mass of the corona. From the extrapolated magnetic field the cloud evolves inside a rather broad open region but decelerates, after reaching its maximum brightness. The influence of such small events for supplying material to the ubiquitous slow wind is noticed. A precise evaluation of the EUV photometric data, after accurately removing the stray light, suggests an interpretation of the weak 174 Å radiation of the cloud as due to resonance scattering in the Fe IX/X lines.

  14. Detecting EUV transients in near real time with ALEXIS

    Energy Technology Data Exchange (ETDEWEB)

    Roussel-Dupre`, D.; Bloch, J.J.; Theiler, J.; Pfafman, T.; Beauchesne, B.

    1995-12-31

    The Array of Low Energy X-ray Imaging Sensors (ALEXIS) experiment consists of a mini-satellite containing six wide angle EUV/ultrasoft X-ray telescopes (Priedhorsky et al. 1989, and Bloch et al. 1994). Its scientific objective is to map out the sky in three narrow ({Delta}E/E {approx} 5%) bandpasses around 66, 71, and 93 eV. During each 50 second satellite rotation period the six telescopes, each with a 30{degrees} field, of:view and a spatial resolution of 0.25{degrees}, scan most of the antisolar hemisphere of the sky. The project is a collaborative effort between Los Alamos National Laboratory, Sandia National Laboratory, and the University of California-Berkeley Space Sciences Laboratory. It is controlled entirely from a small ground station located at Los Alamos. The mission was launched on a Pegasus Air Launched Vehicle on April 25, 1993. An incident at launch delayed our ability to properly analyze the data until November of 1994. In January of 1995, we brought on line automated software to routinely carry out the transient search. After the data is downlinked from the satellite, the software processes and transforms it into sky maps that are automatically searched for new sources. The software then sends the results of these searches by e-mail to the science team within two hours of the downlink. This system has successfully detected the Cataclysmic Variables VW Hyi, U Gem and AR UMa in outburst, and has detected at least two unidentified short duration EUV transients (Roussel-Dupre et al 1995, Roussel-Dupre 1995).

  15. Photodetector of ultraviolet radiation

    International Nuclear Information System (INIS)

    Dorogan, V.; Branzari, V.; Vieru, T.; Manole, M.; Canter, V.

    2000-01-01

    The invention relates to photodetectors on base of semiconductors of ultraviolet radiation and may be used in optoelectronic system for determining the intensity and the dose of ultraviolet radiation emitted by the Sun or other sources. Summary of the invention consists in the fact that in the photodetector of ultraviolet radiation the superficial potential barrier is divided into two identical elements, electrically isolated each of the other, one of them being covered with a layer of transparent material for visible and infrared radiation and absorption the ultra violet radiation. The technical result consists in mutual compensation of visible and infrared components of the radiation spectrum

  16. Mix-and-match considerations for EUV insertion in N7 HVM

    Science.gov (United States)

    Chen, Xuemei; Gabor, Allen; Samudrala, Pavan; Meyers, Sheldon; Hosler, Erik; Johnson, Richard; Felix, Nelson

    2017-03-01

    An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.

  17. Diagnostic system for EUV radiation measurements from dense xenon plasma generated by MPC

    International Nuclear Information System (INIS)

    Petrov, Yu.V.; Garkusha, I.E.; Solyakov, D.G.; Marchenko, A.K.; Chebotarev, V.V.; Ladygina, M.S.; Staltsov, V.V.; Yelisyeyev, D.V.; Hassanein, A.

    2011-01-01

    Magnetoplasma compressor (MPC) of compact geometry has been designed and tested as a source of EUV radiation. In present paper diagnostic system for registration of EUV radiation is described. It was applied for radiation measurements in different operation modes of MPC. The registration system was designed on the base of combination of different types of AXUV photodiodes. Possibility to minimize the influence of electrons and ions flows from dense plasma stream on AXUV detector performance and results of the measurements has been discussed.

  18. Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

    KAUST Repository

    Kryask, Marie

    2013-01-01

    Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.

  19. Computational approach on PEB process in EUV resist: multi-scale simulation

    Science.gov (United States)

    Kim, Muyoung; Moon, Junghwan; Choi, Joonmyung; Lee, Byunghoon; Jeong, Changyoung; Kim, Heebom; Cho, Maenghyo

    2017-03-01

    For decades, downsizing has been a key issue for high performance and low cost of semiconductor, and extreme ultraviolet lithography is one of the promising candidates to achieve the goal. As a predominant process in extreme ultraviolet lithography on determining resolution and sensitivity, post exposure bake has been mainly studied by experimental groups, but development of its photoresist is at the breaking point because of the lack of unveiled mechanism during the process. Herein, we provide theoretical approach to investigate underlying mechanism on the post exposure bake process in chemically amplified resist, and it covers three important reactions during the process: acid generation by photo-acid generator dissociation, acid diffusion, and deprotection. Density functional theory calculation (quantum mechanical simulation) was conducted to quantitatively predict activation energy and probability of the chemical reactions, and they were applied to molecular dynamics simulation for constructing reliable computational model. Then, overall chemical reactions were simulated in the molecular dynamics unit cell, and final configuration of the photoresist was used to predict the line edge roughness. The presented multiscale model unifies the phenomena of both quantum and atomic scales during the post exposure bake process, and it will be helpful to understand critical factors affecting the performance of the resulting photoresist and design the next-generation material.

  20. Detection of Quasi-Periodic Pulsations in Solar EUV Time Series

    Science.gov (United States)

    Dominique, M.; Zhukov, A. N.; Dolla, L.; Inglis, A.; Lapenta, G.

    2018-04-01

    Quasi-periodic pulsations (QPPs) are intrinsically connected to the mechanism of solar flares. They are regularly observed in the impulsive phase of flares since the 1970s. In the past years, the studies of QPPs regained interest with the advent of a new generation of soft X-ray/extreme ultraviolet radiometers that pave the way for statistical surveys. Since the amplitude of QPPs in these wavelengths is rather small, detecting them implies that the overall trend of the time series needs to be removed before applying any Fourier or wavelet transform. This detrending process is known to produce artificial detection of periods that must then be distinguished from real ones. In this paper, we propose a set of criteria to help identify real periods and discard artifacts. We apply these criteria to data taken by the Extreme Ultraviolet Variability Experiment (EVE)/ESP onboard the Solar Dynamics Observatory (SDO) and the Large Yield Radiometer (LYRA) onboard the PRoject for On-Board Autonomy 2 (PROBA2) to search for QPPs in flares stronger than M5.0 that occurred during Solar Cycle 24.

  1. Mandelbrot's Extremism

    NARCIS (Netherlands)

    Beirlant, J.; Schoutens, W.; Segers, J.J.J.

    2004-01-01

    In the sixties Mandelbrot already showed that extreme price swings are more likely than some of us think or incorporate in our models.A modern toolbox for analyzing such rare events can be found in the field of extreme value theory.At the core of extreme value theory lies the modelling of maxima

  2. System integration and performance of the EUV engineering test stand

    International Nuclear Information System (INIS)

    Tichenor, Daniel A.; Ray-Chaudhuri, Avijit K.; Replogle, William C.; Stulen, Richard H.; Kubiak, Glenn D.; Rockett, Paul D.; Klebanoff, Leonard E.; Jefferson, Karen L.; Leung, Alvin H.; Wronosky, John B.; Hale, Layton C.; Chapman, Henry N.; Taylor, John S.; Folta, James A.; Montcalm, Claude; Soufli, Regina; Spiller, Eberhard; Blaedel, Kenneth; Sommargren, Gary E.; Sweeney, Donald W.; Naulleau, Patrick; Goldberg, Kenneth A.; Gullikson, Eric M.; Bokor, Jeffrey; Batson, Phillip J.; Attwood, David T.; Jackson, Keith H.; Hector, Scott D.; Gwyn, Charles W.; Yan, Pei-Yang; Yan, P.

    2001-01-01

    The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k 1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for full-field images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features

  3. Breakout Reconnection Observed by the TESIS EUV Telescope

    Science.gov (United States)

    Reva, A. A.; Ulyanov, A. S.; Shestov, S. V.; Kuzin, S. V.

    2016-01-01

    We present experimental evidence of the coronal mass ejection (CME) breakout reconnection, observed by the TESIS EUV telescope. The telescope could observe solar corona up to 2 R⊙ from the Sun center in the Fe 171 Å line. Starting from 2009 April 8, TESIS observed an active region (AR) that had a quadrupolar structure with an X-point 0.5 R⊙ above photosphere. A magnetic field reconstructed from the Michelson Doppler Imager data also has a multipolar structure with an X-point above the AR. At 21:45 UT on April 9, the loops near the X-point started to move away from each other with a velocity of ≈7 km s-1. At 01:15 UT on April 10, a bright stripe appeared between the loops, and the flux in the GOES 0.5-4 Å channel increased. We interpret the loops’ sideways motion and the bright stripe as evidence of the breakout reconnection. At 01:45 UT, the loops below the X-point started to slowly move up. At 15:10 UT, the CME started to accelerate impulsively, while at the same time a flare arcade formed below the CME. After 15:50 UT, the CME moved with constant velocity. The CME evolution precisely followed the breakout model scenario.

  4. BREAKOUT RECONNECTION OBSERVED BY THE TESIS EUV TELESCOPE

    Energy Technology Data Exchange (ETDEWEB)

    Reva, A. A.; Ulyanov, A. S.; Shestov, S. V.; Kuzin, S. V., E-mail: reva.antoine@gmail.com [Lebedev Physical Institute, Russian Academy of Sciences (Russian Federation)

    2016-01-10

    We present experimental evidence of the coronal mass ejection (CME) breakout reconnection, observed by the TESIS EUV telescope. The telescope could observe solar corona up to 2 R{sub ⊙} from the Sun center in the Fe 171 Å line. Starting from 2009 April 8, TESIS observed an active region (AR) that had a quadrupolar structure with an X-point 0.5 R{sub ⊙} above photosphere. A magnetic field reconstructed from the Michelson Doppler Imager data also has a multipolar structure with an X-point above the AR. At 21:45 UT on April 9, the loops near the X-point started to move away from each other with a velocity of ≈7 km s{sup −1}. At 01:15 UT on April 10, a bright stripe appeared between the loops, and the flux in the GOES 0.5–4 Å channel increased. We interpret the loops’ sideways motion and the bright stripe as evidence of the breakout reconnection. At 01:45 UT, the loops below the X-point started to slowly move up. At 15:10 UT, the CME started to accelerate impulsively, while at the same time a flare arcade formed below the CME. After 15:50 UT, the CME moved with constant velocity. The CME evolution precisely followed the breakout model scenario.

  5. BREAKOUT RECONNECTION OBSERVED BY THE TESIS EUV TELESCOPE

    International Nuclear Information System (INIS)

    Reva, A. A.; Ulyanov, A. S.; Shestov, S. V.; Kuzin, S. V.

    2016-01-01

    We present experimental evidence of the coronal mass ejection (CME) breakout reconnection, observed by the TESIS EUV telescope. The telescope could observe solar corona up to 2 R ⊙ from the Sun center in the Fe 171 Å line. Starting from 2009 April 8, TESIS observed an active region (AR) that had a quadrupolar structure with an X-point 0.5 R ⊙ above photosphere. A magnetic field reconstructed from the Michelson Doppler Imager data also has a multipolar structure with an X-point above the AR. At 21:45 UT on April 9, the loops near the X-point started to move away from each other with a velocity of ≈7 km s −1 . At 01:15 UT on April 10, a bright stripe appeared between the loops, and the flux in the GOES 0.5–4 Å channel increased. We interpret the loops’ sideways motion and the bright stripe as evidence of the breakout reconnection. At 01:45 UT, the loops below the X-point started to slowly move up. At 15:10 UT, the CME started to accelerate impulsively, while at the same time a flare arcade formed below the CME. After 15:50 UT, the CME moved with constant velocity. The CME evolution precisely followed the breakout model scenario

  6. RCI Simulation for EUV spectra from Sn ions

    International Nuclear Information System (INIS)

    Kagawa, T; Tanuma, H; Ohashi, H; Nishihara, K

    2007-01-01

    Using the relativistic-configuration-interaction atomic structure code, RCI simulations for EUV spectra from Sn 10+ , Sn 11+ and Sn 12+ ions are carried out, where it is assumed that each ion is embedded in a LTE plasma with the electron temperature of 30 eV. To make clear assignment of the measured spectra, the value of the excitation energy limit, which is introduced to limit the number of excited states in the simulation, is changed to see the excitation-energy-limit dependence of the spectral shape. The simulated spectra are obtained as a superposition of line intensities due to all possible transitions between two states whose excitation energy from the ground state is lower than the excitation energy limit assumed. The RCI simulated spectra are compared to the spectra measured with the chargeexchange- collision experiment in which a rare gas such as Xe or He as a target is bombarded by a charge-selected tin ion. Applicability of the LTE model to a decay model in the charge exchange collision experiment is also discussed

  7. The EUV chromospheric network in the quiet Sun

    International Nuclear Information System (INIS)

    Reeves, E.M.

    1976-01-01

    Investigations on the structure and intensity of the chromospheric network from quiet solar regions have been carried out with EUV data obtained from the Harvard spectroheliometer on the Apollo Telescope Mount of Skylab. The distribution of intensities within supergranulation cell interiors follows a near normal function, where the standard deviation exceeds the value expected from the counting rate, which indicates fine-scale structure below the 5 arc sec resolution of the data. The intensities from the centers of supergranulation cells appear to be the same in both quiet regions and coronal holes, although the network is significantly different in the two types of regions. The average halfwidth of the network elements was measured as 10 arc sec, and was independent of the temperature of formation of the observing line for 3.8< logTsub(e)<5.8. The contrast between the network and the centers of cells is greatest for lines with logTsub(e)approximately5.2, where the network contributes approximately 75% of the intensity of quiet solar regions. The contrast and fractional intensity contributions decrease to higher and lower temperatures characteristic of the corona and chromosphere. (Auth.)

  8. High efficiency multilayer blazed gratings for EUV and soft X-rays: Recent developments

    International Nuclear Information System (INIS)

    Voronov, Dmitriy; Ahn, Minseung; Anderson, Erik; Cambie, Rossana; Chang, Chih-Hao; Goray, Leonid; Gullikson, Eric; Heilmann, Ralf; Salmassi, Farhad; Schattenburg, Mark; Warwick, Tony; Yashchuk, Valeriy; Padmore, Howard

    2011-01-01

    Multilayer coated blazed gratings with high groove density are the best candidates for use in high resolution EUV and soft x-ray spectroscopy. Theoretical analysis shows that such a grating can be potentially optimized for high dispersion and spectral resolution in a desired high diffraction order without significant loss of diffraction efficiency. In order to realize this potential, the grating fabrication process should provide a perfect triangular groove profile and an extremely smooth surface of the blazed facets. Here we report on recent progress achieved at the Advanced Light Source (ALS) in fabrication of high quality multilayer coated blazed gratings. The blazed gratings were fabricated using scanning beam interference lithography followed by wet anisotropic etching of silicon. A 200 nm period grating coated with a Mo/Si multilayer composed with 30 bi-layers demonstrated an absolute efficiency of 37.6percent in the 3rd diffraction order at 13.6 nm wavelength. The groove profile of the grating was thoroughly characterized with atomic force microscopy before and after the multilayer deposition. The obtained metrology data were used for simulation of the grating efficiency with the vector electromagnetic PCGrate-6.1 code. The simulations showed that smoothing of the grating profile during the multilayer deposition is the main reason for efficiency losses compared to the theoretical maximum. Investigation of the grating with cross-sectional transmission electron microscopy revealed a complex evolution of the groove profile in the course of the multilayer deposition. Impact of the shadowing and smoothing processes on growth of the multilayer on the surface of the sawtooth substrate is discussed.

  9. The inner-relationship of hard X-ray and EUV bursts during solar flares

    International Nuclear Information System (INIS)

    Emslie, A.G.; Brown, J.C.; Donnelly, R.F.

    1978-01-01

    A comparison is made between the flux-versus-time profile in the EUV band and the thick target electron flux profile as inferred from hard X-rays for a number of moderately large solar flares. This complements Kane and Donnelly's (1971) study of small flares. The hard X-ray data are from ESRO TD-1A and the EUV inferred from SFD observations. Use of a chi 2 minimising method shows that the best overall fit between the profile fine structures obtains for synchronism to < approximately 5 s which is within the timing accuracy. This suggests that neither conduction nor convection is fast enough as the primary mechanism of energy transport into the EUV flare and rather favours heating by the electrons themselves or by some MHD wave process much faster than acoustic waves. The electron power deposited, for a thick target model, is however far greater than the EUV luminosity for any reasonable assumptions about the area and depth over which EUV is emitted. This means that either most of the power deposited is conducted away to the optical flare or that only a fraction < approximately 1-10% of the X-ray emitting electrons are injected downwards. Recent work on Hα flare heating strongly favours the latter alternative - i.e. that electrons are mostly confined in the corona. (Auth.)

  10. Registration performance on EUV masks using high-resolution registration metrology

    Science.gov (United States)

    Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

    2016-10-01

    Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

  11. Ultraviolet radiation and immunosuppression.

    LENUS (Irish Health Repository)

    Murphy, G M

    2009-11-01

    Ultraviolet (UV) radiation is a complete carcinogen. The effects of UV radiation are mediated via direct damage to cellular DNA in the skin and suppression of image surveillance mechanisms. In the context of organ transplantation, addiction of drugs which suppress the immune system add greatly to the carcinogenicity of UV radiation. This review considers the mechanisms of such effects.

  12. Ultraviolet fire detector

    Science.gov (United States)

    Turnage, J. E.; Linford, R. M. F.; Cornish, S. D.

    1976-01-01

    System is capable of detecting ultraviolet light emitted by match size flame at distance of 10 ft. System is not affected by high energy or particulate radiation and is therefore particularly suited for applications around nuclear plants and X-ray equipment.

  13. Psoriasis and ultraviolet radiation

    International Nuclear Information System (INIS)

    Farber, E.M.; Nall, L.

    1993-01-01

    Prevention and detection screening programs as a public health service in curtailing the ever-increasing incidence of all forms of skin cancer are reviewed. The effect of solar and artificial ultraviolet radiation on the general population and persons with psoriasis is examined. 54 refs

  14. FIRST SIMULTANEOUS OBSERVATION OF AN H{alpha} MORETON WAVE, EUV WAVE, AND FILAMENT/PROMINENCE OSCILLATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Asai, Ayumi; Isobe, Hiroaki [Unit of Synergetic Studies for Space, Kyoto University, Yamashina, Kyoto 607-8471 (Japan); Ishii, Takako T.; Kitai, Reizaburo; Ichimoto, Kiyoshi; UeNo, Satoru; Nagata, Shin' ichi; Morita, Satoshi; Nishida, Keisuke; Shibata, Kazunari [Kwasan and Hida Observatories, Kyoto University, Yamashina, Kyoto 607-8471 (Japan); Shiota, Daikou [Advanced Science Institute, RIKEN, Wako, Saitama 351-0198 (Japan); Oi, Akihito [College of Science, Ibaraki University, Mito, Ibaraki 310-8512 (Japan); Akioka, Maki, E-mail: asai@kwasan.kyoto-u.ac.jp [Hiraiso Solar Observatory, National Institute of Information and Communications Technology, Hitachinaka, Ibaraki 311-1202 (Japan)

    2012-02-15

    We report on the first simultaneous observation of an H{alpha} Moreton wave, the corresponding EUV fast coronal waves, and a slow and bright EUV wave (typical EIT wave). We observed a Moreton wave, associated with an X6.9 flare that occurred on 2011 August 9 at the active region NOAA 11263, in the H{alpha} images taken by the Solar Magnetic Activity Research Telescope at Hida Observatory of Kyoto University. In the EUV images obtained by the Atmospheric Imaging Assembly on board the Solar Dynamic Observatory we found not only the corresponding EUV fast 'bright' coronal wave, but also the EUV fast 'faint' wave that is not associated with the H{alpha} Moreton wave. We also found a slow EUV wave, which corresponds to a typical EIT wave. Furthermore, we observed, for the first time, the oscillations of a prominence and a filament, simultaneously, both in the H{alpha} and EUV images. To trigger the oscillations by the flare-associated coronal disturbance, we expect a coronal wave as fast as the fast-mode MHD wave with the velocity of about 570-800 km s{sup -1}. These velocities are consistent with those of the observed Moreton wave and the EUV fast coronal wave.

  15. EUV blank defect and particle inspection with high throughput immersion AFM with 1nm 3D resolution

    NARCIS (Netherlands)

    Es, M.H. van; Sadeghian Marnani, H.

    2016-01-01

    Inspection of EUV mask substrates and blanks is demanding. We envision this is a good target application for massively parallel Atomic Force Microscopy (AFM). We envision to do a full surface characterization of EUV masks with AFM enabling 1nm true 3D resolution over the entire surface. The limiting

  16. Review on the solar spectral variability in the EUV for space weather purposes

    Directory of Open Access Journals (Sweden)

    J. Lilensten

    2008-02-01

    Full Text Available The solar XUV-EUV flux is the main energy source in the terrestrial diurnal thermosphere: it produces ionization, dissociation, excitation and heating. Accurate knowledge of this flux is of prime importance for space weather. We first list the space weather applications that require nowcasting and forecasting of the solar XUV-EUV flux. We then review present models and discuss how they account for the variability of the solar spectrum. We show why the measurement of the full spectrum is difficult, and why it is illusory to retrieve it from its atmospheric effects. We then address the problem of determining a set of observations that are adapted for space weather purposes, in the frame of ionospheric studies. Finally, we review the existing and future space experiments that are devoted to the observation of the solar XUV-EUV spectrum.

  17. Construction, calibration, and application of a compact spectrophotometer for EUV(300-2500 A) plasma diagnostics

    International Nuclear Information System (INIS)

    Moos, H.W.; Chen, K.I.; Terry, J.L.

    1979-01-01

    A 400-mm normal incidence concave grating spectrophotometer, specifically designed for plasma diagnostics, is described. The wavelength drive, in which the grating is translated as well as rotated, is discussed in detail; the wavelength linearity of the sine drive and methods of improving it are analyzed. The instrument can be used in any orientation, is portable under vacuum, and quite rugged. The construction techniques utilized produce a high quality vacuum making the instrument compatible with both high purity plasma devices and synchrotron radiation sources. The photometric sensitivity calibration was found to be very stable during extended use on high temperature plasma devices. The applications of the instrument to diagnose plasmas in two tokamaks and a mirror device are decribed. A facility used for photometric calibration of extreme ultraviolet (lambda>300-A) spectrophotometers against NBS standard diodes is described. The instrumental calibration obtained using this facility was checked by using synchrotron radiation from SURF II; very good agreement was observed

  18. Polarization control of high order harmonics in the EUV photon energy range.

    Science.gov (United States)

    Vodungbo, Boris; Barszczak Sardinha, Anna; Gautier, Julien; Lambert, Guillaume; Valentin, Constance; Lozano, Magali; Iaquaniello, Grégory; Delmotte, Franck; Sebban, Stéphane; Lüning, Jan; Zeitoun, Philippe

    2011-02-28

    We report the generation of circularly polarized high order harmonics in the extreme ultraviolet range (18-27 nm) from a linearly polarized infrared laser (40 fs, 0.25 TW) focused into a neon filled gas cell. To circularly polarize the initially linearly polarized harmonics we have implemented a four-reflector phase-shifter. Fully circularly polarized radiation has been obtained with an efficiency of a few percents, thus being significantly more efficient than currently demonstrated direct generation of elliptically polarized harmonics. This demonstration opens up new experimental capabilities based on high order harmonics, for example, in biology and materials science. The inherent femtosecond time resolution of high order harmonic generating table top laser sources renders these an ideal tool for the investigation of ultrafast magnetization dynamics now that the magnetic circular dichroism at the absorption M-edges of transition metals can be exploited.

  19. Extreme cosmos

    CERN Document Server

    Gaensler, Bryan

    2011-01-01

    The universe is all about extremes. Space has a temperature 270°C below freezing. Stars die in catastrophic supernova explosions a billion times brighter than the Sun. A black hole can generate 10 million trillion volts of electricity. And hypergiants are stars 2 billion kilometres across, larger than the orbit of Jupiter. Extreme Cosmos provides a stunning new view of the way the Universe works, seen through the lens of extremes: the fastest, hottest, heaviest, brightest, oldest, densest and even the loudest. This is an astronomy book that not only offers amazing facts and figures but also re

  20. Microwave, EUV, and X-ray observations of active region loops and filaments

    International Nuclear Information System (INIS)

    Schmahl, E.

    1980-01-01

    Until the advent of X-ray and EUV observations of coronal structures, radio observers were forced to rely on eclipse and coronagraph observations in white light and forbidden coronal lines for additional diagnostics of the high temperature microwave sources. While these data provided enough material for theoretical insight into the physics of active regions, there was no way to make direct, simultaneous comparison of coronal structures on the disk as seen at microwave and optical wavelengths. This is now possible, and therefore the author summarizes the EUV and X-ray observations indicating at each point the relevance to microwaves. (Auth.)