Luminescence investigation of Yb3+/Er3+ codoped single LiYF4 microparticle

International Nuclear Information System (INIS)

Gao, Wei; Zheng, Hairong; He, Enjie; Lu, Ying; Gao, Fangqi

2014-01-01

Tetragonal phase LiYF 4 :Yb 3+ /Er 3+ microparticles are synthesized via facile hydrothermal method. Single LiYF 4 microparticle is excited with IR laser at 980 nm in a confocal setup, and strong green and weak red emissions are observed. It is found that single LiYF 4 :Yb 3+ /Er 3+ microparticle with sub-structure presents stronger upconversion luminescence emission and smaller intensity ratio of red to green emission than that from LiYF 4 :Yb 3+ /Er 3+ microparticle with no sub-structure. The possible mechanism, the influence of particle size and the existence of EDTA on the upconversion luminescence emission are investigated. The current study suggests that the luminescence observation with single micropaticle can effectively avoid the influence of environment and neighbor particles, which is important for investigating the luminescence properties of micro- or nano-crystals and for extending their application. - Highlights: • Single LiYF 4 microparticle is excited with IR laser at 980 nm in a confocal setup, and strong green and weak red emissions are observed. • Single LiYF 4 microparticle with different morphology exhibits different fluorescence emission intensity and intensity ratio of red to green emission. • The possible mechanism, the influence of particle size and the existence of EDTA on the upconversion emission are investigated

Ternary silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and quaternary derivatives RERh{sub 4}Si{sub 2-x}Sn{sub x} (RE = Y, Nd, Sm, Gd-Lu) - structure, chemical bonding, and solid state NMR spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Vosswinkel, Daniel; Benndorf, Christopher; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics; Matar, Samir F. [Bordeaux Univ., CNRS, ICMCB, UPR 9048, Pessac (France)

2016-11-01

The silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and silicide stannides RERh{sub 4}Si{sub 2-x}Sn{sub x}(RE = Y, Nd, Sm, Gd-Lu) were synthesized from the elements by arc-melting and subsequent annealing. The new compounds crystallize with the orthorhombic YRh{sub 4}Ge{sub 2} type structure, space group Pnma. They were characterized by X-ray powder patterns and several structures were refined from single crystal X-ray diffractometer data. The main structural motifs of this series of silicides are tricapped trigonal prisms formed by the transition metal and rare earth atoms. One of the two crystallographically independent silicon sites allows for formation of solid solutions with tin, exemplarily studied for ErRh{sub 4}Si{sub 2-x}Sn{sub x}. Electronic structure calculations reveal strong covalent Rh-Si bonding as the main stability factor. Multinuclear ({sup 29}Si, {sup 45}Sc, and {sup 89}Y) magic-angle spinning (MAS) NMR spectra of the structure representatives with diamagnetic rare-earth elements (Sc, Y, Lu) are found to be consistent with the crystallographic data and specifically confirm the selective substitution of Sn in the Si2 sites in the quaternary compounds YRh{sub 4}SiSn and LuRh{sub 4}SiSn.

Rare earth-rich cadmium compounds RE{sub 10}TCd{sub 3} (RE = Y, Tb, Dy, Ho, Er, Tm, Lu; T = Rh, Pd, Ir, Pt) with an ordered Co{sub 2}Al{sub 5}-type structure

Energy Technology Data Exchange (ETDEWEB)

Block, Theresa; Klenner, Steffen; Heletta, Lukas; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2018-04-01

Eighteen new rare earth-rich intermetallic phases RE{sub 10}TCd{sub 3} (RE = Y, Tb, Dy, Ho, Er, Tm, Lu; T = Rh, Pd, Ir, Pt) were obtained by induction melting of the elements in sealed niobium ampoules followed by annealing in muffle furnaces. All samples were characterized by X-ray powder diffraction. The structures of four representatives were refined from single-crystal X-ray diffractometer data: ordered Co{sub 2}Al{sub 5} type, P6{sub 3}/mmc, a = 951.2(1), c = 962.9(2) pm, wR = 0.0460, 595 F{sup 2} values, 20 parameters for Er{sub 10}RhCd{sub 3}; a = 945.17(4), c = 943.33(4), wR = 0.0395, 582 F{sup 2} values, 21 parameters for Lu{sub 9.89}PdCd{sub 3.11}; a = 964.16(6), c = 974.93(6) pm, wR = 0.0463, 614 F{sup 2} values, 21 parameters for Y{sub 10}Ir{sub 1.09}Cd{sub 2.91}; a = 955.33(3), c = 974.56(3) pm, wR = 0.0508, 607 F{sup 2} values, 22 refined parameters for Dy{sub 9.92}IrCd{sub 3.08}. Refinements of the occupancy parameters revealed small homogeneity ranges resulting from RE/Cd, respectively T/Cd mixing. The basic building units of the RE{sub 10}TCd{sub 3} phases are transition metal-centered RE{sub 6} trigonal prisms (TP) that are condensed with double-pairs of empty RE{sub 6} octahedra via common triangular faces. A second type of rods is formed by slightly distorted RE3 rate at Cd{sub 6}RE{sub 6} icosahedra which are condensed via Cd{sub 3} triangular faces. The shortest interatomic distances occur for RE-T, compatible with strong covalent bonding interactions. Temperature dependent magnetic susceptibility measurements were performed for RE{sub 10}RhCd{sub 3} (RE = Dy-Tm, Lu), RE{sub 10}IrCd{sub 3} (RE = Er, Tm, Lu) and RE{sub 10}PtCd{sub 3} (RE = Y, Lu). While Y{sub 10}PtCd{sub 3} and Lu{sub 10}TCd{sub 3} (T = Rh, Ir, Pt) show Pauli paramagnetic behavior, the compounds containing paramagnetic rare earth elements show Curie-Weiss behavior (the experimental magnetic moments indicate stable trivalent RE{sup 3+}) and magnetic ordering at low temperatures

Preparation of rod-like β-Si3N4 single crystal particles

International Nuclear Information System (INIS)

Hirao, K.; Tsuge, A.; Brito, M.E.; Kanzaki, S.

1994-01-01

The use of β-Si 3 N 4 particles as a seed material has been demonstrated to be effective for development of a self-reinforcing microstructure in sintered silicon nitride ceramics. We have confirmed the seeding effect and arrived at a concept that seed particles should consist of rod-like single crystals free from defects and with a large diameter. The present work describes our attempts to produce such particles with a controlled morphology and in high amount. β-Si 3 N 4 particles with a diameter of 1μm and length of 5μm were obtained by heating a mixture of α-Si 3 N 4 , SiO 2 and Y 2 O 3 , followed by acid rinse treatments to remove residual glassy phase. (orig.)

Ferromagnetism in proton irradiated 4H-SiC single crystal

Directory of Open Access Journals (Sweden)

Ren-Wei Zhou

2015-04-01

Full Text Available Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Electroluminescence of erbium in Al/α-Si:H(Er)/p-c-Si/Al structure

International Nuclear Information System (INIS)

Kon'kov, I.O.; Kuznetsov, A.N.; Pak, P.E.; Terukov, E.I.; Granitsyna, L.S.

2001-01-01

It is informed for the first time on the observation of the erbium intensive electroluminescence from the amorphous hydrated silicon layer by application of the Al/α-Si:H(Er)/p-c-Si/Al structure in the direct shift mode. The above structure is the n-p-heterostructure with the barrier values of 0.3-0.4 eV for the electrons and 0.9-1.1 eV for the holes. The electroluminescence efficiency is evaluated at the level ∼ 2 x 10 -5 . The electroluminescence effect in the Al/α-Si:H(Er)/p-c-Si/Al structure is connected with the hole tunneling from the crystal silicon by the amorphous silicon localized states with the subsequent release into the valent zone [ru

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

Science.gov (United States)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Ellipsometric studies of ErMnO₃ single crystals

DEFF Research Database (Denmark)

Babonas, G.-J.; Grivel, Jean-Claude; Reza, A.

2007-01-01

Ellipsometric studies of ErMnO3 single crystals have been carried out in the spectral range of 1-5 eV by means of photometric ellipsometers. Experimental ellipsometric data were analysed in the uniaxial crystal model. For the first time, the components of dielectric function of ErMnO3 were...

ESR studies of electron irradiated K3Ir(CN)6 in KCl single crystals

International Nuclear Information System (INIS)

Vugman, N.V.; Pinhal, N.M.

1983-01-01

ESR studies of KCl single crystals doped with small amounts of K 3 Ir(CN) 6 and submitted to a prolongued 2 MeV electron irradiation at room temperature reveal the presence of the [IR(CN) 5 Cl] 4- and [Ir(CN) 4 Cl 2 ] 4- new molecular species. Ligand spin densities and ligand field parameters are calculated from the experimental hyperfine and superhyperfine interactions and compared to previous data on the [Ir(CN) 5 ] 4- species. (Author) [pt

Thermal characterization, crystal field analysis and in-band pumped laser performance of Er doped NaY(WO(4(2 disordered laser crystals.

Directory of Open Access Journals (Sweden)

María Dolores Serrano

Full Text Available Undoped and Er-doped NaY(WO42 disordered single crystals have been grown by the Czochralski technique. The specific heat and thermal conductivity (κ of these crystals have been characterized from T = 4 K to 700 K and 360 K, respectively. It is shown that κ exhibits anisotropy characteristic of single crystals as well as a κ(T behavior observed in glasses, with a saturation mean free phonon path of 3.6 Å and 4.5 Å for propagation along a and c crystal axes, respectively. The relative energy positions and irreducible representations of Stark Er(3+ levels up to (4G(7/2 multiplet have been determined by the combination of experimental low (<10 K temperature optical absorption and photoluminescence measurements and simulations with a single-electron Hamiltonian including both free-ion and crystal field interactions. Absorption, emission and gain cross sections of the (4I(13/2↔(4I(15/2 laser related transition have been determined at 77 K. The (4I(13/2 Er(3+ lifetime (τ was measured in the temperature range of 77-300 K, and was found to change from τ (77K ≈ 4.5 ms to τ (300K ≈ 3.5 ms. Laser operation is demonstrated at 77 K and 300 K by resonantly pumping the (4I(13/2 multiplet at λ≈1500 nm with a broadband (FWHM≈20 nm diode laser source perfectly matching the 77 K crystal (4I(15/2 → (4I(13/2 absorption profile. At 77 K as much as 5.5 W of output power were obtained in π-polarized configuration with a slope efficiency versus absorbed pump power of 57%, the free running laser wavelength in air was λ≈1611 nm with the laser output bandwidth of 3.5 nm. The laser emission was tunable over 30.7 nm, from 1590.7 nm to 1621.4 nm, for the same π-polarized configuration.

Luminescence investigation of Yb{sup 3+}/Er{sup 3+} codoped single LiYF{sub 4} microparticle

Energy Technology Data Exchange (ETDEWEB)

Gao, Wei; Zheng, Hairong, E-mail: hrzheng@snnu.edu.cn; He, Enjie; Lu, Ying; Gao, Fangqi

2014-08-01

Tetragonal phase LiYF{sub 4}:Yb{sup 3+}/Er{sup 3+} microparticles are synthesized via facile hydrothermal method. Single LiYF{sub 4} microparticle is excited with IR laser at 980 nm in a confocal setup, and strong green and weak red emissions are observed. It is found that single LiYF{sub 4}:Yb{sup 3+}/Er{sup 3+} microparticle with sub-structure presents stronger upconversion luminescence emission and smaller intensity ratio of red to green emission than that from LiYF{sub 4}:Yb{sup 3+}/Er{sup 3+} microparticle with no sub-structure. The possible mechanism, the influence of particle size and the existence of EDTA on the upconversion luminescence emission are investigated. The current study suggests that the luminescence observation with single micropaticle can effectively avoid the influence of environment and neighbor particles, which is important for investigating the luminescence properties of micro- or nano-crystals and for extending their application. - Highlights: • Single LiYF{sub 4} microparticle is excited with IR laser at 980 nm in a confocal setup, and strong green and weak red emissions are observed. • Single LiYF{sub 4} microparticle with different morphology exhibits different fluorescence emission intensity and intensity ratio of red to green emission. • The possible mechanism, the influence of particle size and the existence of EDTA on the upconversion emission are investigated.

Synthesis and characterization of the novel rare earth orthophosphates Y0.5Er0.5PO4 and Y0.5Yb0.5PO4

International Nuclear Information System (INIS)

Schildhammer, Daniel; Petschnig, Lucas L.; Fuhrmann, Gerda; Heymann, Gunter; Schottenberger, Herwig; Huppertz, Hubert; Tribus, Martina

2016-01-01

The new mixed rare earth (RE) orthophosphates Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 were synthesized by a classical solid state reaction in an electrical furnace at 1200 C. As starting materials, the corresponding rare earth oxides and diammonium hydrogen phosphate were used. The powder diffraction analyses revealed that the new compounds Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 crystallize in a zircon-type structure being isostructural with the rare earth orthophosphate YPO 4 . Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 crystallize in the tetragonal space group I4 1 /amd (no. 141) with four formula units in the unit cell. The structural parameters based on Rietveld refinements are a = 687.27(2), c = 601.50(2) pm, V = 0.28412(1) nm 3 , R p = 0.0143, and R wp = 0.0186 (all data) for Y 0.5 Er 0.5 PO 4 and a = 684.61(2), c = 599.31(2) pm, V = 0.28089(2) nm 3 , R p = 0.0242, and R wp = 0.0313 (all data) for Y 0.5 Yb 0.5 PO 4 . Furthermore, the structure of Y 0.5 Er 0.5 PO 4 was refined from single-crystal X-ray diffraction data: a = 687.78(5), c = 601.85(4) pm, V = 0.28470(5) nm 3 , R 1 = 0.0165, and wR 2 = 0.0385 (all data). In both compounds, the rare earth metal ions are eightfold coordinated by oxygen atoms, forming two unique interlocking tetrahedra with two individual RE-O distances. The tetrahedral phosphate groups [PO 4 ] 3- are slightly distorted in both compounds. The individual rare earth ions share a common position (Wyckoff site 4a). The presence of two rare earth ions in the structures of the new orthophosphates Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 was additionally confirmed by single-crystal EDX spectroscopy revealing a ratio of 1:1.

Large rotating magnetocaloric effect in ErAlO3 single crystal

Directory of Open Access Journals (Sweden)

X. Q. Zhang

2017-05-01

Full Text Available Magnetic and magnetocaloric properties of ErAlO3 single crystal were investigated. Magnetization of ErAlO3 shows obvious anisotropy when magnetic field is applied along the a, b and c axes, which leads to large anisotropic magnetic entropy change. In particular, large rotating field entropy change from the b to c axis within the bc plane is obtained and reaches 9.7 J/kg K at 14 K in a field of 5 T. This suggests the possibility of using ErAlO3 single crystal for magnetic refrigerators by rotating its magnetization vector rather than moving it in and out of the magnet.

Equiatomic indides REIrIn (RE=La, Pr, Nd, Er-Yb). Crystal and electronic structure

Energy Technology Data Exchange (ETDEWEB)

Zaremba, Nazar [Ivan Franko National Univ. of Lviv (Ukraine). Dept. of Inorganic Chemistry; Technische Univ. Muenchen, Garching (Germany). Fakultaet fuer Chemie; Muts, Ihor; Zaremba, Vasyl [Ivan Franko National Univ. of Lviv (Ukraine). Dept. of Inorganic Chemistry; Hlukhyy, Viktor [Technische Univ. Muenchen, Garching (Germany). Fakultaet fuer Chemie; Stein, Sebastian; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Pavlyuk, Volodymyr [Ivan Franko National Univ. of Lviv (Ukraine). Dept. of Inorganic Chemistry; Czestochowa Jan Dlugosz Univ., Czestochowa (Poland). Inst. of Chemistry, Environmental Protection and Biotechnology

2017-10-01

The equiatomic rare earth iridium indides REIrIn (RE=La, Pr, Nd, Er-Yb) were synthesized by reaction of the elements in induction or muffle furnaces and were characterized through X-ray powder patterns. The structures of LaIr{sub 0.86}In{sub 1.14}, PrIr{sub 0.89}In{sub 1.11}, NdIr{sub 0.94}In{sub 1.06}, ErIrIn (all ZrNiAl type, P anti 62m), and YbIrIn (TiNiSi type, Pnma) were refined from single crystal X-ray diffractometer data. Refinements of the occupancy parameters revealed small degrees of solid solutions with indium substitution on the iridium sites. Chemical bonding analyses and electronic structure calculations indicate the dominance of metallic bonding in addition to partial ionic interactions between the cations and polyanions, as well as covalent contributions between the indium and iridium atoms.

K/sub 4/Si/sub 4/Te/sub 10/, the first tellurosilicate with adamantane-like Si/sub 4/Te/sub 10//sup 4 -/ anions

Energy Technology Data Exchange (ETDEWEB)

Eisenmann, B; Schaefer, H [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

1982-08-01

The new compound K/sub 4/Si/sub 4/Te/sub 10/ crystallizes in the orthorhombic system (space group Pnma) with following constants: a = 2125.8(8) pm, b = 1200.5(7) pm, c = 1060.8(7) pm. The structure is characterized by SiTe/sub 4/ tetrahedra, connected by common corners to adamantane-like Si/sub 4/Te/sub 10//sup 4 -/ units.

Growth, and magnetic study of Sm0.4Er0.6FeO3 single crystal grown by optical floating zone technique

Science.gov (United States)

Wu, Anhua; Zhao, Xiangyang; Man, Peiwen; Su, Liangbi; Kalashnikova, A. M.; Pisarev, R. V.

2018-03-01

Sm0.4Er0.6FeO3 single crystals were successfully grown by optical floating zone method; high quality samples with various orientations were manufactured. Based on these samples, Magnetic property of Sm0.4Er0.6FeO3 single crystals were investigated systemically by means of the temperature dependence of magnetization. It indicated that compositional variations not only alter the spin reorientation temperature, but also the compensation temperature of the orthoferrites. Unlike single rare earth orthoferrites, the reversal transition temperature point of Sm0.4Er0.6FeO3 increases as magnetic field increases, which is positive for designing novel spin switching or magnetic sensor device.

Epitaxial growth of matched metallic ErP0.6As0.4 layers on GaAs

International Nuclear Information System (INIS)

Guivarc'h, A.; Le Corre, A.; Gaulet, J.; Guenais, B.; Minier, M.; Ropars, G.; Badoz, P.A.; Duboz, J.Y.

1990-01-01

Successful growth of (001)ErP 0.6 As 0.4 single crystal film on (001) GaAs has been demonstrated. The epitaxial metallic layers reproducibly showed lattice mismatch below 5 10 -4 . This is, to the authors' knowledge, the first report of a stable, epitaxial and lattice-matched metal/compound semiconductor heterostructure. The ErP 0.6 As 0.4 /n-GaAs diodes yielded excellent I-V characteristics with an ideality factor of 1.1 and barrier height of 0.88 eV. For a 240 Angstrom- thick film, metallic behavior was observed with resistivities of 25 and 86 μΩcm at 1.5 K and room temperature, respectively. As the other Er compounds ErP, ErAs, ErSb and ErSi 2 , ErP 0.6 As 0.4 presents an abrupt drop in resistivity in the vicinity of the liquid helium temperature, due to a paramagnetic to antiferromagnetic phase transition

Neutron diffraction and magnetization studies of Tb0.5Er0.5 single crystal in an external magnetic field

International Nuclear Information System (INIS)

Kosugi, T.; Yamamoto, N.

1999-01-01

Complete text of publication follows. The rare earth Tb 0.5 Er 0.5 alloy exhibits a tilted helix at low temperatures [1]. However, the magnetic structures of Tb 0.5 Er 0.5 and the magnetization processes of the tilted helix are not clear. Neutron diffraction experiments in external magnetic fields and magnetization measurements of Tb 0.5 Er 0.5 single crystal have been performed. At zero magnetic field, the Tb 0.5 Er 0.5 alloy exhibited a normal helix below 170 K, a bunching normal helix below about 28 K, and finally a bunching tilted helix below about 25 K. Below about 60 K, the helical pitch 30 deg showed a lock-in feature. The magnetization measurements at low temperatures showed a four-step magnetic transition. The results are presented as a magnetic field-temperature (H-T) phase diagram. (author) [1] H. Fujii et al., J. Phys. Soc. Jpn. 50 (1981) 2939

Synthesis, vibrational characteristic and luminescence properties of Er3+in HNH4ErP3O10

Science.gov (United States)

Chékir-Mzali, Jalila; Elgharbi, Sarra; Horchani-Naifer, Karima; Férid, Mokhtar

2017-11-01

Polycrystalline powders of the triphosphate of ammonium hydrogen and erbium NH4ErHP3O10 are grown by flux method. The obtained sample was characterized by X-Ray Diffraction, Infrared and Raman spectroscopies. It was found that this compound is isostructural with NH4BiHP3O10. It crystallizes in the triclinic system, with space group P-1. The spectroscopic properties have been investigated in the UV-Vis and IR region via absorption, excitation, and emission spectra at room temperature. Also, the particle size distribution was investigated and the average crystallite size of HNH4ErP3O10 was 124.08 nm. The optical band gap energy (Eg ≈ 4.24 eV) was calculated from the diffuse reflectance by using the Kubelka-Munk function and Tauc's relation. The time-resolved luminescence of 4F9/2 emission has also been studied. The decay time was shown to be exponential with a pure radiative transition and the lifetime value for the transition 4F9/2 → 4I15/2 is found equal to 15, 4 μs. The effects of the crystal structure, NH4+ and OH groups on the lifetime have been revealed. The CIE chromaticity coordinates reveal that this phosphor can be a promising Yellow-orange emitting material.

Highly Efficient LiYF4:Yb(3+), Er(3+) Upconversion Single Crystal under Solar Cell Spectrum Excitation and Photovoltaic Application.

Science.gov (United States)

Chen, Xu; Xu, Wen; Song, Hongwei; Chen, Cong; Xia, Haiping; Zhu, Yongsheng; Zhou, Donglei; Cui, Shaobo; Dai, Qilin; Zhang, Jiazhong

2016-04-13

Luminescent upconversion is a promising way to harvest near-infrared (NIR) sunlight and transforms it into visible light that can be directly absorbed by active materials of solar cells and improve their power conversion efficiency (PCE). However, it is still a great challenge to effectively improve the PCE of solar cells with the assistance of upconversion. In this work, we demonstrate the application of the transparent LiYF4:Yb(3+), Er(3+) single crystal as an independent luminescent upconverter to improve the PCE of perovskite solar cells. The LiYF4:Yb(3+), Er(3+) single crystal is prepared by an improved Bridgman method, and its internal quantum efficiency approached to 5.72% under 6.2 W cm(-2) 980 nm excitation. The power-dependent upconversion luminescence indicated that under the excitation of simulated sunlight the (4)F(9/2)-(4)I(15/2) red emission originally results from the cooperation of a 1540 nm photon and a 980 nm photon. Furthermore, when the single crystal is placed in front of the perovskite solar cells, the PCE is enhanced by 7.9% under the irradiation of simulated sunlight by 7-8 solar constants. This work implies the upconverter not only can serve as proof of principle for improving PCE of solar cells but also is helpful to practical application.

Electric field influence on exciton absorption of Er doped and undoped InSe single crystals

International Nuclear Information System (INIS)

Guerbulak, B; Kundakci, M; Ates, A; Yildirim, M

2007-01-01

Undoped InSe and Er doped InSe (InSe:Er) single crystals were grown by using the Stockbarger method. Ingots had no cracks and voids on the surface. The absorption measurements were carried out in InSe and InSe:Er samples for U=0 and U=30 V in the temperature range 10-320 K with a step of 10 K. Electric field effects on excitons are observed in InSe and InSe:Er single crystals. The absorption edge shifted towards longer wavelengths and decreased intensity in absorption spectra under an electric field E≅5.9 kV cm -1 . The applied electric field caused a shifting and a decreasing of intensity in the absorption spectra. The shifting of the absorption edge can be explained on the basis of the Franz-Keldysh effect (FKE) or thermal heating of the sample under the electric field. At 10 and 320 K, the first exciton energies for InSe were calculated as 1.336 and 1.291 eV for zero voltage and 1.331 and 1.280 eV for electric field and InSe:Er as 1.329 and 1.251 eV for zero voltage and 1.318 and 1.248 eV for electric field, respectively

Magnetic phase transitions in Er7Rh3 studied on single crystals

International Nuclear Information System (INIS)

Tsutaoka, Takanori; Obata, Keisuke; Cheyvuth, Seng; Koyama, Keiichi

2014-01-01

Highlights: • Magnetic and electrical properties of Er 7 Rh 3 were studied on single crystals. • The magnetic phase diagram along the c-axis was constructed. • The field-induced magnetic transitions in Er 7 Rh 3 can be explained by the magnetic structure with two magnetic propagation vectors. • The anomalies of electrical resistivity can also be described by the magnetic structure in Er 7 Rh 3 . - Abstract: Magnetic phase transitions in Er 7 Rh 3 with the Th 7 Fe 3 type hexagonal structure have been studied on single crystals by measuring magnetization, magnetic susceptibility and electrical resistivity. Er 7 Rh 3 possesses antiferromagnetic state below T N = 13 K. In the ordered state, the two successive magnetic transitions at T t1 = 6.2 K and T t2 = 4.5 K were observed. Several field-induced magnetic transitions were also observed along the a- and c-axes below T N ; magnetic field H – temperature T phase diagram along the c-axis was constructed. The field-induced magnetic transitions in Er 7 Rh 3 can be explained by the magnetic structure with two magnetic propagation vectors which were derived by the previous neutron diffraction studies. Electrical resistivity shows humps just below the magnetic transition temperatures, T N and T t1 due to the super-zone gap formation at the Fermi level; these anomalies can also be described by the magnetic structure changes in Er 7 Rh 3

Properties and Crystallization Phenomena in Li2Si2O5–Ca5(PO4)3F and Li2Si2O5–Sr5(PO4)3F Glass–Ceramics Via Twofold Internal Crystallization

Science.gov (United States)

Rampf, Markus; Dittmer, Marc; Ritzberger, Christian; Schweiger, Marcel; Höland, Wolfram

2015-01-01

The combination of specific mechanical, esthetic, and chemical properties is decisive for the application of materials in prosthodontics. Controlled twofold crystallization provides a powerful tool to produce special property combinations for glass–ceramic materials. The present study outlines the potential of precipitating Ca5(PO4)3F as well as Sr5(PO4)3F as minor crystal phases in Li2Si2O5 glass–ceramics. Base glasses with different contents of CaO/SrO, P2O5, and F− were prepared within the glasses of the SiO2–Li2O–K2O–CaO/SrO–Al2O3–P2O5–F system. Preliminary studies of nucleation by means of XRD and scanning electron microscopy (SEM) of the nucleated base glasses revealed X-ray amorphous phase separation phenomena. Qualitative and quantitative crystal phase analyses after crystallization were conducted using XRD in combination with Rietveld refinement. As a main result, a direct proportional relationship between the content of apatite-forming components in the base glasses and the content of apatite in the glass–ceramics was established. The microstructures of the glass–ceramics were investigated using SEM. Microstructural and mechanical properties were found to be dominated by Li2Si2O5 crystals and quite independent of the content of the apatite present in the glass–ceramics. Biaxial strengths of up to 540 MPa were detected. Ca5(PO4)3F and Sr5(PO4)3F influence the translucency of the glass–ceramics and, hence, help to precisely tailor the properties of Li2Si2O5 glass–ceramics. The authors conclude that the twofold crystallization of Li2Si2O5–Ca5(PO4)3F or Li2Si2O5–Sr5(PO4)3F glass–ceramics involves independent solid-state reactions, which can be controlled via the chemical composition of the base glasses. The influence of the minor apatite phase on the optical properties helps to achieve new combinations of features of the glass–ceramics and, hence, displays new potential for dental applications. PMID:26389112

Excitation mechanism of Er{sup 3+} in a-Si:H; Anregungsmechanismus von Er{sup 3+} in a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Kuehne, H.

2004-07-01

The aim of this work is the examination of the optoelectronical material a-Si:H (Er). It is characterised in the good electronic properties of the a-Si:H and the emission wavelength of 1.5 micrometer of erbium which coincides with the absorbtion minimum of glasfibres. Photoluminescence measurements confirm the assumption that oxigen is necessary for the optical activation of Er{sup 3+} in addition to the symmetrical breaking of the crystal field. The flexible lattice of a-Si:H enables a high concentration of Erbium up to 5.10{sup 21}/cm{sup 3} with a quantum efficiency of the luminescence of 0.5-1.5.10{sup -4} at room temperature. Photoluminescence excitation and absorption measurements of a-Si:H (Er) show, that there is no direct excitation of the erbium ions because the absorption of the Er{sup 3+} ions is two orders of magnitude below the absorption of silicon. The excitation or the Er{sup 3+} ions takes place through the absorption in silicon with additional energy transfer to Erbium. Photoluminescence measurements are done in order to differentiate between the possible excitation channels, the intrinsic bond-bond channel and the excitation through defects. The different temperature dependence of the intensity of the intrinsic luminescence (77 K - 300 K >3 orders of magnitude) in comparison with the defect luminescence and the Erbium luminescence (both 1-1.5 orders of magnitude) shows that the energy transfer takes place over defects. Luminescence and absorption measurements with boron doped a-Si:H (Er) show no dependence of the Erbium luminescence in dependence of defect density or the electrical charge of the defects. The luminescence spectra show a break in the defect luminescence at 0.84 eV. This agrees with the first excited state of the Er{sup 3+} ion combined with a clearly smaller line width of the defect luminescence (0.18 eV in comparision with >0.3 eV in erbium free a-Si:H). This result shows the resonance of the energy transfer. The resonance is

Lu.sub.2./sub.SiO.sub.5./sub.:Ce and Y.sub.2./sub.SiO.sub.5./sub.:Ce single crystals and single crystalline film scintillators: comparisom of the luminescent and scintillation properties

Czech Academy of Sciences Publication Activity Database

Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Mareš, Jiří A.; Nikl, Martin; Kučera, M.

2013-01-01

Roč. 56, SEP (2013), s. 84-89 ISSN 1350-4487. [International Conference on Luminescent Detectors and Transformers of Ionizing Radiation 2012 /8./, LUMDETR 2012. Halle (Saale), 10.09.2012-14.09.2012] R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Lu 2 SiO 5 :Ce * Y 2 SiO 2 * single crystalline film, * single crystal * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.140, year: 2013

Tracer diffusion studies of 26Mg, 30Si and 18O in single crystal forsterite (Mg2SiO4) and of 18O in single crystal SiO2

International Nuclear Information System (INIS)

Schachtner, R.

1981-01-01

Tracer diffusion coefficients of Mg, Si and O in monocrystalline forsterite were determined by Sims as a function of temperature and crystal orientation. Former results on oxygen diffusion in SiO 2 single crystals using nuclear activation methods were confirmed by Sims data. The influence of crystal defects and impurities is discussed. (TW)

Synthesis of silicated hydroxyapatite Ca10(PO4)6-x(SiO4)x(OH)2-x

International Nuclear Information System (INIS)

Palard, Mickael; Champion, Eric; Foucaud, Sylvie

2008-01-01

The preparation of silicated hydroxyapatite Ca 10 (PO 4 ) 6-x (SiO 4 ) x (OH) 2-x (SiHA) with 0≤x≤2 was investigated using a wet precipitation method followed by a heat treatment. X-ray diffraction and Rietveld refinement, Fourier transformed IR (FTIR) spectroscopy, elemental analyses, transmission electron microscopy and thermal analyses were used to characterize the samples. The raw materials were composed of a partially silicated and carbonated apatite and a secondary minor phase containing the excess silicon. Single phase silicated hydroxyapatites, with 0≤x≤1, could be synthesized after a thermal treatment of the raw powders above 700 deg. C. The presence of carbonate groups in the raw apatite played an important role in the incorporation of silicates during heating. From the different results, the mechanisms of formation of SiHA are discussed. - Graphical abstract: The preparation of pure silicated hydroxyapatite Ca 10 (PO 4 ) 6-x (SiO 4 ) x (OH) 2-x powders with controlled silicon content was investigated. The synthesis route included a precipitation in aqueous media. It required an additional high temperature solid-state reaction to fully incorporate the silicon into the apatite crystals

Crystal and molecular structure of the coordination compounds of Er3+ with 1-(methoxydiphenylphosphoryl)-2-diphenylphosphorylbenzene [ErL21(NO3)2]2[Er(NO3)2(H2O)5]0.333(NO3)2.333 · 2.833H2O and its ethyl substituted derivative [ErL22(NO3)2][Er(NO3)5]0.5 · 0.5H2O

International Nuclear Information System (INIS)

Polyakova, I. N.; Baulin, V. E.; Ivanova, I. S.; Pyatova, E. N.; Sergienko, V. S.; Tsivadze, A. Yu.

2015-01-01

The coordination compounds of Er 3+ with 1-(methoxydiphenylphosphoryl)-2-diphenylphosphorylbenzene [ErL 2 1 (NO 3 ) 2 ] 2 [Er(NO 3 ) 2 (H 2 O) 5 ] 0.333 (NO 3 ) 2.333 · 2.833H 2 O (I) and its ethyl substituted derivative [ErL 2 2 (NO 3 ) 2 ][Er(NO 3 ) 5 ] 0.5 · 0.5H 2 O (II) are synthesized and their crystal structures are studied. I and II contain [ErL 2 (NO 3 ) 2 ] + complex cations of identical composition and close structure. The eight-vertex polyhedron of the Er atom in the shape of a distorted octahedron with two split trans vertices is formed by the O atoms of the phosphoryl groups of L ligands and nitrate anions. L ligands close nine-membered metallocycles. The structures contain spacious channels which are populated differently, namely, by disordered [Er(NO 3 ) 2 (H 2 O) 5 ] + complex cations, NO 3 − anions, and crystallization water molecules in I and disordered [Er(NO 3 ) 5 ] 2− complex anions and crystallization water molecules in II. The IR spectra of I and II are studied

Site of Er ions in silica layers codoped with Si nanoclusters and Er

International Nuclear Information System (INIS)

Pellegrino, P.; Garrido, B.; Arbiol, J.; Garcia, C.; Lebour, Y.; Morante, J.R.

2006-01-01

Silica layers implanted with Si and Er ions to various doses and annealed at 950 deg. C have been investigated by means of energy-filtered transmission electron microscopy (EFTEM) and high annular angle dark field (HAADF). EFTEM analysis reveals Si nanoclusters (Si-nc) with an average size around 3 nm for high Si content (15 at. %) whereas no clusters can be imaged for the lowest Si excess (5 at. %). Raman scattering supports that amorphous Si precipitates are present in all the samples. Moreover, the filtered images show that Er ions appear preferentially located outside the Si-nc. HAADF analysis confirms that the Er atoms form agglomerations of 5-10 nm size when the Er concentration exceeds 1x10 20 cm -3 . This observation correlates well with the reduction of the Er population excitable by Si nanoclusters, in the best case corresponding to 10% of the total. A suitable tuning of the annealing drastically reduces this deleterious effect

Growth and optical property of ZnWO4: Er3+ crystal

International Nuclear Information System (INIS)

Yang Fugui; Tu Chaoyang; Li Jianfu; Jia Guohua; Wang Hongyan; Wei Yanping; You Zhenyu; Zhu Zhaojie; Wang Yan; Lu Xiuai

2007-01-01

Good quality crystals ZnWO 4 activated with Er 3+ have been grown by means of Czochralski method and characterized using optical spectroscopy techniques. XRD, absorption spectra, fluorescence spectrum are presented and the Judd-Ofelt intensity parameters Ω 2 , Ω 4 , and Ω 6 are obtained to be 6.76x10 -20 , 0.37x10 -20 , and 0.50x10 -20 cm 2 , respectively. Along crystallographic axes, refractive indices are presented. The fluorescence decay time of the 4 I 13/2 level has also been investigated and shows an exponential behavior with a lifetime value of 5.52 ms. The crystal is potentially used for green and infrared eye-safe lasers

Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

International Nuclear Information System (INIS)

Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

1992-11-01

Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

Synthesis and characterization of the novel rare earth orthophosphates Y{sub 0.5}Er{sub 0.5}PO{sub 4} and Y{sub 0.5}Yb{sub 0.5}PO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Schildhammer, Daniel; Petschnig, Lucas L.; Fuhrmann, Gerda; Heymann, Gunter; Schottenberger, Herwig; Huppertz, Hubert [Innsbruck Univ. (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie; Tribus, Martina [Innsbruck Univ. (Austria). Inst. fuer Mineralogie und Petrographie

2016-02-01

The new mixed rare earth (RE) orthophosphates Y{sub 0.5}Er{sub 0.5}PO{sub 4} and Y{sub 0.5}Yb{sub 0.5}PO{sub 4} were synthesized by a classical solid state reaction in an electrical furnace at 1200 C. As starting materials, the corresponding rare earth oxides and diammonium hydrogen phosphate were used. The powder diffraction analyses revealed that the new compounds Y{sub 0.5}Er{sub 0.5}PO{sub 4} and Y{sub 0.5}Yb{sub 0.5}PO{sub 4} crystallize in a zircon-type structure being isostructural with the rare earth orthophosphate YPO{sub 4}. Y{sub 0.5}Er{sub 0.5}PO{sub 4} and Y{sub 0.5}Yb{sub 0.5}PO{sub 4} crystallize in the tetragonal space group I4{sub 1}/amd (no. 141) with four formula units in the unit cell. The structural parameters based on Rietveld refinements are a = 687.27(2), c = 601.50(2) pm, V = 0.28412(1) nm{sup 3}, R{sub p} = 0.0143, and R{sub wp} = 0.0186 (all data) for Y{sub 0.5}Er{sub 0.5}PO{sub 4} and a = 684.61(2), c = 599.31(2) pm, V = 0.28089(2) nm{sup 3}, R{sub p} = 0.0242, and R{sub wp} = 0.0313 (all data) for Y{sub 0.5}Yb{sub 0.5}PO{sub 4}. Furthermore, the structure of Y{sub 0.5}Er{sub 0.5}PO{sub 4} was refined from single-crystal X-ray diffraction data: a = 687.78(5), c = 601.85(4) pm, V = 0.28470(5) nm{sup 3}, R{sub 1} = 0.0165, and wR{sub 2} = 0.0385 (all data). In both compounds, the rare earth metal ions are eightfold coordinated by oxygen atoms, forming two unique interlocking tetrahedra with two individual RE-O distances. The tetrahedral phosphate groups [PO{sub 4}]{sup 3-} are slightly distorted in both compounds. The individual rare earth ions share a common position (Wyckoff site 4a). The presence of two rare earth ions in the structures of the new orthophosphates Y{sub 0.5}Er{sub 0.5}PO{sub 4} and Y{sub 0.5}Yb{sub 0.5}PO{sub 4} was additionally confirmed by single-crystal EDX spectroscopy revealing a ratio of 1:1.

Antiferromagnetic ordering of Er2NiSi3 compound

International Nuclear Information System (INIS)

Pakhira, Santanu; Mazumdar, Chandan; Ranganathan, R.

2014-01-01

Ternary intermetallics of the stoichiometric composition R 2 TX 3 , where, R = rare earth element, T = d-electron transition metal and X= p-electron element, crystallizes in hexagonal A1B 2 type crystal structure with space group P6/mmm. We report here the synthesis and basic magnetic properties of the compound Er 2 NiSi 3 . Paramagnetic to antiferromagnetic phase change occurs below 5.4 K for this compound. (author)

Giant crystal-electric-field effect and complex magnetic behavior in single-crystalline CeRh3Si2

Science.gov (United States)

Pikul, A. P.; Kaczorowski, D.; Gajek, Z.; Stȩpień-Damm, J.; Ślebarski, A.; Werwiński, M.; Szajek, A.

2010-05-01

Single-crystalline CeRh3Si2 was investigated by means of x-ray diffraction, magnetic susceptibility, magnetization, electrical resistivity, and specific-heat measurements carried out in wide temperature and magnetic field ranges. Moreover, the electronic structure of the compound was studied at room temperature by cerium core-level x-ray photoemission spectroscopy (XPS). The physical properties were analyzed in terms of crystalline electric field and compared with results of ab initio band-structure calculations performed within the density-functional theory approach. The compound was found to crystallize in the orthorhombic unit cell of the ErRh3Si2 type (space group Imma No.74, Pearson symbol: oI24 ) with the lattice parameters a=7.1330(14)Å , b=9.7340(19)Å , and c=5.6040(11)Å . Analysis of the magnetic and XPS data revealed the presence of well-localized magnetic moments of trivalent cerium ions. All the physical properties were found to be highly anisotropic over the whole temperature range studied and influenced by exceptionally strong crystalline electric field with the overall splitting of the 4f1 ground multiplet exceeding 5700 K. Antiferromagnetic order of the cerium magnetic moments at TN=4.70(1)K and their subsequent spin rearrangement at Tt=4.48(1)K manifest themselves as distinct anomalies in the temperature characteristic of all the physical properties investigated and exhibit complex evolution in an external magnetic field. A tentative magnetic B-T phase diagram, constructed for B parallel to the b axis being the easy magnetization direction, shows very complex magnetic behavior of CeRh3Si2 , similar to that recently reported for an isostructural compound CeIr3Si2 . The electronic band-structure calculations corroborated the antiferromagnetic ordering of the cerium magnetic moments and well-reproduced the experimental XPS valence-band spectrum.

The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes

International Nuclear Information System (INIS)

Lee, Su-Hwan; Kim, Dal-Ho; Kim, Ji-Heon; Lee, Gon-Sub; Park, Jea-Gun; Takeo, Katoh

2009-01-01

For applications such as solar cells and displays, transparent single-crystal Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO 2 and Si 3 N 4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal Si membranes with various thicknesses, and the thinning technology is described. For membranes with thicknesses of 18, 72 and 5000 nm, the respective optical transparent were 96.9%, 93.7% and 9% for R (red, λ = 660 nm), 96.9%, 91.4% and 1% for G (green, λ = 525 nm), and 97.0%, 93.2% and 0% for B (blue, λ = 470 nm). Organic light-emitting diodes (OLEDs) were then fabricated on transparent single-crystal Si membranes with various top Si thicknesses. OLEDs fabricated on 18, 72 and 5000 nm thick membranes and operated at 6 V demonstrated a luminance of 1350, 443 and 27 cd m -2 at the current densities of 148, 131 and 1.5 mA cm -2 , respectively.

Self-assembled infrared-luminescent Er-Si-O crystallites on silicon

International Nuclear Information System (INIS)

Isshiki, H.; Dood, M.J.A. de; Polman, A.; Kimura, T.

2004-01-01

Optically active and electrically excitable erbium complexes on silicon are made by wet-chemical synthesis. The single-crystalline Er-Si-O compound is formed by coating a Si(100) substrate with an ErCl 3 /ethanol solution, followed by rapid thermal oxidation and annealing. Room-temperature Er-related 1.53 μm photoluminescence is observed with a peak linewidth as small as 4 meV. The complexes can be excited directly into the Er intra-4f states, or indirectly, through photocarriers. Er concentrations as high as 14 at. % are achieved, incorporated in a crystalline lattice with a 0.9 nm periodicity. Thermal quenching at room temperature is only a factor 5, and the lifetime at 1.535 μm is 200 μs

Structures and luminescent properties of single-phase La{sub 5.90−x}Ba{sub 4+x}(SiO{sub 4}){sub 6−x}(PO{sub 4}){sub x}F{sub 2}:0.10Ce{sup 3+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Guo, Qingfeng; Liao, Libing, E-mail: clayl@cugb.edu.cn; Mei, Lefu, E-mail: mlf@cugb.edu.cn; Liu, Haikun

2016-04-15

A series of blue-emitting La{sub 5.90−x}Ba{sub 4+x}(SiO{sub 4}){sub 6−x}(PO{sub 4}){sub x}F{sub 2}:0.10Ce{sup 3+} (x= 0, 1, 2, and 3) phosphors with apatite structure were synthesized by a solid-state reaction. The crystal structure and the photoluminescence properties were investigated in detail. The crystallographic occupancy of Ce{sup 3+} in La{sub 2.90}Ce{sub 0.10}Ba{sub 7}(SiO{sub 4}){sub 3}(PO{sub 4}){sub 3}F{sub 2} and La{sub 5.90}Ce{sub 0.10}Ba{sub 4}(SiO{sub 4}){sub 6}F{sub 2} were studied based on Rietveld refinements results and the crystal chemistry rules. La{sub 5.90−x}Ba{sub 4+x}(SiO{sub 4}){sub 6−x}(PO{sub 4}){sub x}F{sub 2}:0.10Ce{sup 3+} exhibited strong blue light emission in the range of 407–414 nm with high thermal stability upon excitation at 276 nm. Besides, the activation energy E of La{sub 5.90}Ce{sub 0.10}Ba{sub 4}(SiO{sub 4}){sub 6}F{sub 2} and La{sub 2.90}Ce{sub 0.10}Ba{sub 7}(SiO{sub 4}){sub 3}(PO{sub 4}){sub 3}F{sub 2} phosphors were calculated to be 0.152 and 0.177 eV. These results suggest that La{sub 5.90−x}Ba{sub 4+x}(SiO{sub 4}){sub 6−x}(PO{sub 4}){sub x}F{sub 2}:0.10Ce{sup 3+} is a potential blue phosphor candidate for near-UV-pumped w-LEDs.

Growth of Bi 12SiO 20 single crystals by the pulling-down method with continuous feeding

Science.gov (United States)

Maida, Shigeru; Higuchi, Mikio; Kodaira, Kohei

1999-09-01

Bi 12SiO 20 single crystals were successfully grown by the pulling-down method with continuous feeding. As-grown crystals were amber in color and transparent, and had no cracks or inclusions. A crystal with homogeneous composition was obtained from Bi-rich feed powder having a composition of 14.1 mol% SiO 2, whereas precipitates of Bi 4Si 3O 12 were observed on the surface of a crystal grown with stoichiometric powder. The shape of the solid-liquid interface during the crystal growth was estimated to be almost flat, which was favorable to avoid core formation. Average dislocation density was 4×10 3/cm 2, which was comparable to that of Bi 12SiO 20 crystals grown by the Czochralski method.

Crystal growth and magnetic property of a new compound CeAu4Si2

International Nuclear Information System (INIS)

Nakashima, Hiroshi; Thamizhavel, Arumugam; Matsuda, Tatsuma D.; Haga, Yoshinori; Takeuchi, Tetsuya; Sugiyama, Kiyohiro; Settai, Rikio; Onuki, Yoshichika

2006-01-01

We have succeeded in growing a new ternary Ce compound CeAu 4 Si 2 . This compound crystallizes in the tetragonal crystal structure P4-bar m2 (-bar 1-bar 1-bar 5) with lattice parameters a=4.3304 -bar A and c=27.409 -bar A. The local environment around Ce atoms is similar to that of the well-known ThCr 2 Si 2 -type tetragonal structure in CeAu 2 Si 2 . Single crystals of CeAu 4 Si 2 were grown by the flux method using an Au 4.37 Si eutectic alloy as flux. Electrical resistivity, specific heat and magnetization measurements revealed a ferromagnetic ordering at T C =5.3 -bar K with a saturation moment of 1.7-bar μ B /Ce. Anisotropic features in the magnetic susceptibility and magnetization were well explained by a crystalline electric field (CEF) model. Estimated excitation energies from the ground state doublet to two excited doublets are 284 and 340-bar K, respectively

Single-crystal films of a combination of materials (co-crystal) involving DAST and IR-125 for electro-optic applications

Science.gov (United States)

Narayanan, A.; Titus, J.; Rajagopalan, H.; Vippa, P.; Thakur, M.

2006-03-01

Single-crystal film of DAST (4'-dimethylamino-N-methyl-4-stilbazolium tosylate) has been shown [1] to have exceptionally large electro-optic coefficients (r11 ˜ 770 pm/V at 633 nm). In this report, single crystal film of a combination of materials (co-crystal) involving DAST and a dye molecule IR-125 will be discussed. Modified shear method was used to prepare the co-crystal films. The film has been characterized using polarized optical microscopy, optical absorption spectroscopy and x-ray diffraction. The optical absorption spectrum has two major bands: one at about 350--600 nm corresponding to DAST and the other at about 600-900 nm corresponding to IR-125. The x-ray diffraction results show peaks involving the presence of DAST and IR-125 within the co-crystal film. Since the co-crystal has strong absorption at longer wavelengths it is expected to show higher electro-optic coefficients at longer wavelengths. Preliminary measurements at 1.55 μm indicate a high electro-optic coefficient of the co-crystal film. [1] Swamy, Kutty, Titus, Khatavkar, Thakur, Appl. Phys. Lett. 2004, 85, 4025; Kutty, Thakur, Appl. Phys. Lett. 2005, 87, 191111.

Discovery of iron group impurity ion spin states in single crystal Y{sub 2}SiO{sub 5} with strong coupling to whispering gallery photons

Energy Technology Data Exchange (ETDEWEB)

Goryachev, Maxim; Farr, Warrick G.; Carmo Carvalho, Natalia do; Creedon, Daniel L.; Le Floch, Jean-Michel [ARC Centre of Excellence for Engineered Quantum Systems, University of Western Australia, 35 Stirling Highway, Crawley WA 6009 (Australia); Probst, Sebastian [Physikalisches Institut, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Bushev, Pavel [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany); Tobar, Michael E., E-mail: michael.tobar@uwa.edu.au [ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, University of Western Australia, Crawley 6009 (Australia)

2015-06-08

Interaction of Whispering Gallery Modes (WGMs) with dilute spin ensembles in solids is an interesting paradigm of Hybrid Quantum Systems potentially beneficial for Quantum Signal Processing applications. Unexpected ion transitions are measured in single crystal Y{sub 2}SiO{sub 5} using WGM spectroscopy with large Zero Field Splittings at 14.7 GHz, 18.4 GHz, and 25.4 GHz, which also feature considerable anisotropy of the g-tensors as well as two inequivalent lattice sites, indicating spins from Iron Group Ion (IGI) impurities. The comparison of undoped and Rare-Earth doped crystals reveal that the IGIs are introduced during co-doping of Eu{sup 3+} or Er{sup 3+} with concentration at much lower levels of order 100 ppb. The strong coupling regime between an ensemble of IGI spins and WGM photons have been demonstrated at 18.4 GHz and near zero field. This approach together with useful optical properties of these ions opens avenues for “spins-in-solids” Quantum Electrodynamics.

Single crystal growth of yttrium calcium oxy borate (YCOB) crystals by flux technique and their characterization. CP-3.5

International Nuclear Information System (INIS)

Arun Kumar, R.; Senthilkumar, M.; Dhanasekaran, R.

2007-01-01

Yttrium calcium oxy borate single crystals were grown by the flux technique for the first time. Polycrystalline YCOB material was prepared by solid state reaction method. Single crystals of YCOB were grown using boron-tri-oxide flux. Several transparent single crystals of dimensions 10 x 5 x 5 mm 3 were obtained. The grown crystals were characterized by powder XRD and UV- VIS-NIR studies. The results of powder XRD confirm the crystalline structure of YCOB. The UV- VIS-NIR transmission spectrum reveals that the crystal is highly transparent (above 75%) from ultraviolet (220 nm) to near IR regions enabling it as a suitable candidate for high power UV applications

Enhanced ~2.7 µm emission investigation of Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition in Yb,Er,Pr:SrLaGa{sub 3}O{sub 7} crystal

Energy Technology Data Exchange (ETDEWEB)

Wang, Yan [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Zhang, Baotong [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); College of Materials Science and Engineering, Fujian Normal University, Fuzhou, Fujian 350007 (China); Li, Jianfu; Zhu, Zhaojie; You, Zhenyu [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Tu, Chaoyang, E-mail: tcy@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2017-03-15

The bulk crystal of 5at% Yb{sup 3+}, 20 at% Er{sup 3+} and 0.2 at% Pr{sup 3+} triply doped SrLaGa{sub 3}O{sub 7} (abbr. as Yb,Er,Pr:SLGO) was grown by the Czochralski method. The effects of co-dopant Yb{sup 3+} and Pr{sup 3+} on the spectroscopic properties and the mutual energy transfer mechanism were investigated, via the measurements of its absorption, near-infrared and mid-infrared fluorescence spectra, as well as the fluorescence decay curves of Er{sup 3+}:{sup 4}I{sub 13/2} and {sup 4}I{sub 11/2} levels at room temperature. As compared with 20at% Er{sup 3+} singly doped SrLaGa{sub 3}O{sub 7} crystal, ~2.7 µm emission intensity corresponding to Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition is enhanced greatly in the Yb,Er,Pr:SLGO crystal. Spectral analyses indicate that the sensitization of Yb{sup 3+} to Er{sup 3+} improves the ~2.7 µm emission in Yb,Er,Pr:SLGO crystal, meanwhile, the depopulation of Pr{sup 3+} from Er{sup 3+} decreases the ~1.5 µm emission and inhibits the self-termination effect. The energy transfer efficiencies of Yb{sup 3+}→Er{sup 3+} (ET1), Er{sup 3+}→Pr{sup 3+} (ET2) and Er{sup 3+}→Pr{sup 3+} (ET3) were estimated and discussed. The above results conclude that Yb,Er,Pr:SLGO crystal is a good candidate for LD pumped mid-infrared laser. - Graphical abstract: As compared with Er: SrLaGa{sub 3}O{sub 7} crystal, ~2.7 µm MIR emissions corresponding to Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition were enhanced in Yb{sup 3+}, Er{sup 3+} and Pr{sup 3+} triply doped SrLaGa{sub 3}O{sub 7} crystal owing to the sensitization of co-dopant Yb{sup 3+} via ET1, at the same time, ~1.5 µm NIR emissions were weakened owing to the depopulation of co-dopant Pr{sup 3+} via ET3.

Crystal structure of the Hg4SiS6 and Hg4SiSe6 compounds

International Nuclear Information System (INIS)

Gulay, L.D.; Olekseyuk, I.D.; Parasyuk, O.V.

2002-01-01

The crystal structures of Hg 4 SiS 6 and Hg 4 SiSe 6 compounds were investigated using X-ray powder diffraction. These compounds crystallize in the monoclinic Cc space group with the lattice parameters a=1.23020(5), b=0.71031(4), c=1.22791(4) nm, β=109.721(3) deg. for Hg 4 SiS 6 and a=1.28110(4), b=0.74034(4), c=1.27471(1) nm, β=109.605(3) deg. for Hg 4 SiSe 6 . Atomic parameters were refined in the isotropic approximation (R I =0.0571 and R I =0.0555 for the Hg 4 SiS 6 and Hg 4 SiSe 6 , respectively)

Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

Science.gov (United States)

Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

2016-08-01

Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

Magnetic properties of lithium rare-earth fluorides: Ferromagnetism in LiErF4 and LiHoF4 and crystal-field parameters at the rare-earth and Li sites

DEFF Research Database (Denmark)

Hansen, P. E.; Johansson, Torben; Nevald, Rolf

1975-01-01

Single crystals of LiErF4 and LiHoF4 have been grown and their magnetic properties measured from 1.3 K to 300 K. LiHoF4 turned out to be a nearly ideal Ising ferromagnet with TC=1.30±0.05 K and a saturation magnetization along the crystalline c axis of (6.98±0.02)μB. In LiErF4 no ordering...... was observed, but extrapolation indicates that below 0.5 K it will be ferromagnetic with the magnetic moments in the crytalline ab plane. From the susceptibilities the crystal-field parameters Bnm with (n, m)=(2, 0), (4, 0), (4, 4), (6, 0), (6, 4) have been extracted giving for Er3+ in LiErF4: 430., -985......., 1185., -5., 740.+i135. (cm-1) and for Ho3+ in LiHoF4: 470., -825., 1050., -10., 760.+i150 (cm-1). The exchange constants were found to be small compared to the dipole interactions. Furthermore the 7Li NMR spectra have been obtained in these materials as well as in LiTbF4 thereby determining the second...

Study of coexistence of ferromagnetism and superconductivity in single-crystal ErRh4B4

International Nuclear Information System (INIS)

Sinha, S.K.; Crabtree, G.W.; Hinks, D.G.; Mook, H.

1981-01-01

Neutron diffraction and resistivity measurements on single crystals of ErRh 4 B 4 have revealed that both superconductivity and ferromagnetic order coexist in this material between 0.71 and 1.2 0 K. In this intermediate phase, a linear polarized modulated structure with a wavelength of approximately 100 A is observed. The modulated moment increases faster than the ferromagnetic moment down to 0.71 K and then disappears suddenly, with loss of superconductivity and a transition to a normal ferromagnetic state. This transition is accompanied by temperature hysteresis of about 60 mK. The same hysteresis, in the inverse sense, is exhibited by the ferromagnetic component. We interpret the intermediate phase as being one of coexisting normal ferromagnetic domains and superconducting sinusoidally ordered domains. Evidence of a small percentage of small ferromagnetic regions of size approx. 100 A is also seen in both the intermediate and ferromagnetic phases. 3 figures

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Structural and Magnetothermal Properties of Compounds: Yb₅Si_xGe_4-x,Sm₅Si_xGe_4-x, EuO, and Eu₃O₄

Energy Technology Data Exchange (ETDEWEB)

Ahn, Kyunghan [Iowa State Univ., Ames, IA (United States)

2007-01-01

The family of R₅Si_xGe_4-x alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R₅Si_xGe_4-x systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R₅Si_xGe_4-x pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R₅Si_xGe_4-x systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb₅Si_xGe_4-xand Sm₅Si_xGe_4-x pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb₅Si_xGe_4-x alloys with 0 ≤ x ≤ 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R₅Si_xGe_4-x systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd₅Si₄-type structure. The magnetic properties of Yb₅Si_xGe_4-x materials are nearly composition

Comparative study of optical and scintillation properties of YVO4, (Lu0.5Y0.5)VO4, and LuVO4 single crystals

International Nuclear Information System (INIS)

Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Kochurikhin, Vladimir V.; Yoshikawa, Akira

2011-01-01

Optical and scintillation properties of YVO 4 , (Lu 0.5 Y 0.5 )VO 4 , and LuVO 4 single crystals grown by the Czochralski (CZ) method with RF heating system are compared. All vanadate crystals show high transmittance (∼80%) in the 400-900 nm wavelength range. In both photo- and radio-luminescence spectra, intense peak around 400-500 nm, which was ascribed to the transition from triplet state of VO 4 3- , was clearly observed. The main decay time component was about 38 μs (YVO 4 ), 18 μs ((Lu 0.5 Y 0.5 )VO 4 ), and 17 μs (LuVO 4 ) under 340 nm excitation. The scintillation light yields of YVO 4 , (Lu 0.5 Y 0.5 )VO 4 , and LuVO 4 crystals (obtained from the 137 Cs excited pulse height spectra) were evaluated to be about 11,200, 10,700, and 10,300 ph/MeV, respectively.

Multi-center vs. two-center bonding within the hetero-polyanion in Eu{sub 2}GaPt{sub 2} and its prototype Ca{sub 2}SiIr{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Borrmann, Horst; Grin, Yuri [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany)

2017-11-17

The compound Eu{sub 2}GaPt{sub 2} was synthesized from the elements in a sealed tantalum tube. Its Ca{sub 2}SiIr{sub 2}-type crystal structure was refined from single-crystal X-ray diffraction data: space group C2/c, a = 9.8775(6), b = 5.8621(6), c = 7.9677(5) Aa, β = 102.257(4) , R{sub F} = 0.039, 1344 observed reflections, and 25 variable parameters. The platinum (iridium) atoms in Eu{sub 2}GaPt{sub 2} and Ca{sub 2}SiIr{sub 2} form linear chains of dumbbells [2c(Pt-Pt) or 2c(Ir-Ir) bonds, respectively]. These chains are interconnected to 2D polyanions in Eu{sub 2}GaPt{sub 2} by the gallium atoms forming 4c(Ga-Pt-Ga-Pt) or by silicon atoms forming 2c(Si-Ir) bonds in Ca{sub 2}SiIr{sub 2}. The polyanion bonds to the europium (calcium) matrix via the pseudo lone-pairs at the gallium (silicon) atoms. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

FT-IR reflection spectra of single crystals: resolving phonons of different symmetry without using polarised radiation

Directory of Open Access Journals (Sweden)

METODIJA NAJDOSKI

2000-07-01

Full Text Available Fourier-transform infrared (FT-IR reflection spectra, asquired at nearnormal incidence, were recorded from single crystals belonging to six crystal systems: CsCr(SO42.12H2O (alum, cubic, K2CuCl2·2H2O (Mitscherlichite, tetragonal, CaCO3 (calcite, hexagonal, KHSO4 (mercallite, orthorhombic, CaSO4·2H2O (gypsum, monoclinic and CuSO4·5H2O (chalcantite, triclinic. The acquired IR reflection spectra were further transformed into absorption spectra, employing the Kramers-Kronig transformation. Except for the cubic alums, the spectra strongly depend on the crystal face from which they were recorded; this is a consequence of anisotropy. Phonons of a given symmetry (E-species, in tetragonal/hexagonal and B-species, in monoclinic crystals may be resolved without using a polariser. The spectrum may be simplified in the case of an orthorhombic crystal, as well. The longitudinal-optical (LO and transversal-optical (TO mode frequencies were calculated in the case of optically isotropic and the simplified spectra of optically uniaxial crystals.

Superconductivity in Ternary Rare-Earth Transition Metal Silicides and Germanides with the SCANDIUM(5) COBALT(4) SILICON(10)-TYPE Structure.

Science.gov (United States)

Berg, Linda Sue

A systematic study of the superconducting and normal state properties of some ternary rare earth transition metal silicides and germanides of the Sc(,5)Co(,4)Si(,10) -type is reported in this work. Low temperature heat capacity measurements indicate the presence of a complicated phonon density of states in these structurally complex compounds. A better description of the phonon spectrum of the high T(,c) materials, Sc(,5)Rh(,4)Si(,10), Sc(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10), given by a model proposed by Junod et al.('1), is presented and discussed. The large values of (DELTA)C/(gamma)(,n)T(,c) and the electron-phonon coupling constant for these high T(,c) compounds indicate that they are strong-coupled superconductors. Relative to other ternary superconductors, many of these materials have large Debye temperatures. The BSC theory does not seem to afford an adequate description of the supercon- ducting state in these compounds. DC electrical resistivity measurements on these compounds show resistivity behaviors deviating from those exhibited by simple metals. The (rho)(T) data for Y(,5)Ir(,4)Si(,10), Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10), indicate the presence of anomalies. Static molar magnetic susceptibility measurements performed on these compounds indicate (1) a small effective magnetic moment of 0.26(mu)(,B) on the Co atom and (2) anomalous behaviors in the Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), Y(,5)Ir(,4)Si(,10), Lu(,5)Ir(,4)Ge(,10), and Y(,5)Rh(,4)Ge(,10) data. It is suggested that the same mechanism, namely, the forma- tion of a charge- or spin-density wave, is causing the anomalous behaviors in both the resistivity and susceptibility data. Lastly, upper critical magnetic field measurements were performed on Sc(,5)Co(,4)Si(,10), Sc(,5)Rh(,4)Si(,10), Sc(,5)Ir(,4)Si(,10), Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10). Relative to the other five samples, Y(,5)Os(,4)Ge(,10) exhibits very high values for (-d

Martinandresite, Ba2(Al4Si12O32)·10H2O, a new zeolite from Wasenalp, Switzerland

Science.gov (United States)

Chukanov, Nikita V.; Zubkova, Natalia V.; Meisser, Nicolas; Ansermet, Stefan; Weiss, Stefan; Pekov, Igor V.; Belakovskiy, Dmitriy I.; Vozchikova, Svetlana A.; Britvin, Sergey N.; Pushcharovsky, Dmitry Yu.

2018-06-01

The new zeolite martinandresite, ideally Ba2(Al4Si12O32)·10H2O, was discovered in the armenite locality of Wasenalp near the Isenwegg peak, Ganter valley, Simplon region, Switzerland. The associated minerals are armenite, quartz, dickite, and chlorite. Martinandresite forms tan-coloured blocky crystals up to 8 × 5 × 3.5 mm, their aggregates up to 6 cm across, as well as cruciform twins up to 3.5 mm. The major form is {010}; the subordinate forms are {100} and {001}. Indistinct cleavage is observed, presumably on (010) and in a direction across (010). The Mohs' hardness is 4½. Density measured by flotation in heavy liquids is 2.482(5) g/cm3. Density calculated using the empirical formula is equal to 2.495 g/cm3. Martinandresite is optically biaxial, negative, α = 1.500(2), β = 1.512(2), γ = 1.515(2) ( λ = 589 nm). 2 V (meas.) = 55(10)°. The IR spectrum is given. The chemical composition of martinandresite is (wt%; electron microprobe, H2O determined by the modified Penfield method): Na2O 0.37, K2O 0.12, BaO 21.55, Al2O3 15.03, SiO2 49.86, H2O 12.57, total 99.50. The empirical formula based on 16 atoms Si + Al pfu is Na0.17K0.04Ba2.00(Al4.19Si11.81O32)H19.85O9.93. The crystal structure was determined using single-crystal X-ray diffraction data. The new mineral is orthorhombic, space group Pmmn, with a = 9.4640(5), b = 14.2288(6), c = 6.9940(4) Å, V = 941.82(8) Å3 and Z = 1. The crystal structure of martinandresite is unique and is based on the Al-Si-O tetrahedral framework containing four-, six- and eight-membered rings of tetrahedra. Si and Al are disordered between the two independent tetrahedral sites. The strongest lines of the powder X-ray diffraction pattern [ d, Å ( I, %) ( hkl)] are: 6.98 (74) (001), 6.26 (83) (011), 5.61 (100) (101), 3.933 (60) (220, 031), 3.191 (50) (112), 3.170 (62) (041), 3.005 (79) (231, 141). Martinandresite is named after Martin Andres (b. 1965), the discoverer of the armenite locality of Wasenalp.

Martinandresite, Ba2(Al4Si12O32)·10H2O, a new zeolite from Wasenalp, Switzerland

Science.gov (United States)

Chukanov, Nikita V.; Zubkova, Natalia V.; Meisser, Nicolas; Ansermet, Stefan; Weiss, Stefan; Pekov, Igor V.; Belakovskiy, Dmitriy I.; Vozchikova, Svetlana A.; Britvin, Sergey N.; Pushcharovsky, Dmitry Yu.

2017-12-01

The new zeolite martinandresite, ideally Ba2(Al4Si12O32)·10H2O, was discovered in the armenite locality of Wasenalp near the Isenwegg peak, Ganter valley, Simplon region, Switzerland. The associated minerals are armenite, quartz, dickite, and chlorite. Martinandresite forms tan-coloured blocky crystals up to 8 × 5 × 3.5 mm, their aggregates up to 6 cm across, as well as cruciform twins up to 3.5 mm. The major form is {010}; the subordinate forms are {100} and {001}. Indistinct cleavage is observed, presumably on (010) and in a direction across (010). The Mohs' hardness is 4½. Density measured by flotation in heavy liquids is 2.482(5) g/cm3. Density calculated using the empirical formula is equal to 2.495 g/cm3. Martinandresite is optically biaxial, negative, α = 1.500(2), β = 1.512(2), γ = 1.515(2) (λ = 589 nm). 2V (meas.) = 55(10)°. The IR spectrum is given. The chemical composition of martinandresite is (wt%; electron microprobe, H2O determined by the modified Penfield method): Na2O 0.37, K2O 0.12, BaO 21.55, Al2O3 15.03, SiO2 49.86, H2O 12.57, total 99.50. The empirical formula based on 16 atoms Si + Al pfu is Na0.17K0.04Ba2.00(Al4.19Si11.81O32)H19.85O9.93. The crystal structure was determined using single-crystal X-ray diffraction data. The new mineral is orthorhombic, space group Pmmn, with a = 9.4640(5), b = 14.2288(6), c = 6.9940(4) Å, V = 941.82(8) Å3 and Z = 1. The crystal structure of martinandresite is unique and is based on the Al-Si-O tetrahedral framework containing four-, six- and eight-membered rings of tetrahedra. Si and Al are disordered between the two independent tetrahedral sites. The strongest lines of the powder X-ray diffraction pattern [d, Å (I, %) (hkl)] are: 6.98 (74) (001), 6.26 (83) (011), 5.61 (100) (101), 3.933 (60) (220, 031), 3.191 (50) (112), 3.170 (62) (041), 3.005 (79) (231, 141). Martinandresite is named after Martin Andres (b. 1965), the discoverer of the armenite locality of Wasenalp.

LiCa{sub 4}Si{sub 4}N{sub 8}F and LiSr{sub 4}Si{sub 4}N{sub 8}F. Nitridosilicate fluorides with a BCT-zeolite-type network structure

Energy Technology Data Exchange (ETDEWEB)

Horky, Katrin; Schnick, Wolfgang [Department of Chemistry, Inorganic Solid-State, Chemistry, University of Munich (LMU), Butenandtstrasse 5-13, 81377, Munich (Germany)

2017-02-17

LiCa{sub 4}Si{sub 4}N{sub 8}F and LiSr{sub 4}Si{sub 4}N{sub 8}F were synthesized from Si{sub 3}N{sub 4}, LiNH{sub 2}, CaH{sub 2}/SrH{sub 2}, and LiF through a metathesis reaction in a radiofrequency furnace. The crystal structures of both compounds were solved and refined on the basis of single-crystal X-ray diffraction data [LiCa{sub 4}Si{sub 4}N{sub 8}F: P2{sub 1}/c (no. 14), a = 10.5108(3), b = 9.0217(3), c = 10.3574(3) Aa, β = 117.0152(10) , R{sub 1} = 0.0422, wR{sub 2} = 0.0724, Z = 4; LiSr{sub 4}Si{sub 4}N{sub 8}F: P4nc (no. 104), a = 9.3118(4), b = 9.3118(4), c = 5.5216(2) Aa, R{sub 1} = 0.0160, wR{sub 2} = 0.0388, Z = 2]. The silicate substructure of both compounds is built up of vertex-sharing SiN{sub 4} tetrahedra, thereby forming a structure analogous to the BCT zeolite with Ca{sup 2+}/Sr{sup 2+}, Li{sup +}, and F{sup -} ions filling the voids. The crystal structure of LiSr{sub 4}Si{sub 4}N{sub 8}F is homeotypic with that of Li{sub 2}Sr{sub 4}Si{sub 4}N{sub 8}O as it exhibits the same zeolite-type [SiN{sub 2}]{sup 2-} framework, but incorporates LiF instead of Li{sub 2}O. In contrast to the respective Sr compound, LiCa{sub 4}Si{sub 4}N{sub 8}F shows a distortion of the BCT-zeolite-type network as well as an additional site for F. Both F sites in LiCa{sub 4}Si{sub 4}N{sub 8}F exhibit different coordination spheres to LiSr{sub 4}Si{sub 4}N{sub 8}F. The title compounds are the first reported lithium alkaline-earth nitridosilicates containing fluorine. The crystal structures were confirmed by lattice-energy calculations (MAPLE), energy-dispersive X-ray spectroscopy (EDX) measurements, and powder X-ray diffraction. IR spectra confirmed the absence of N-H bonds. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

Growth and characterization of the La{sub 3}Ga{sub 4.85}Fe{sub 0.15}SiO{sub 14} piezoelectric single crystal

Energy Technology Data Exchange (ETDEWEB)

Dou, Renqin [Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Ding, Shoujun; Sun, Dunlu [Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); Zhang, Qi [Anhui Firesky Crystal Science and Technology Co. Ltd, Tongling (China); Shi, Zibin [26th Institute of China Electronics Technology Group Corporation, Chongqing (China); Wang, Jiyang [Shandong University, State Key Laboratory of Crystal Materials, Jinan (China)

2017-01-15

A new piezoelectric single crystal La{sub 3}Ga{sub 4.85}Fe{sub 0.15}SiO{sub 14} (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient k{sub eff} of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm{sup -3} by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H{sub 2}SO{sub 4} etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and ε {sub 11}, ε {sub 33}, d{sub 11}, and d{sub 14} are 20.86, 51.99, 6.5 pC/N, and -5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense. (orig.)

XRD, TEM, IR, Raman and NMR Spectroscopy of In Situ Crystallization of Lithium Disilicate Glass

Science.gov (United States)

Fuss, T.; Mogus-Milankovic, A.; Ray, C. S.; Lesher, C. E.; Youngman, R.; Day, D. E.

2006-01-01

The structure of a Li2O-2SiO2 (LS2) glass was investigated as a function of pressure and temperature up to 6 GPa and 750 C respectively, using XRD, TEM, IR, Raman and NMR spectroscopy. Glass densified at 6 GPa has an average Si-O-Si bond angle approx.7deg lower than that found in glass processed at 4.5 GPa. At 4.5 GPa, lithium disilicate crystallizes from the glass, while at 6 GPa a new high pressure form of lithium metasilicate crystallizes. The new phase, while having lithium metasilicate crystal symmetry, contains at least 4 different Si sites. NMR results for 6 GPa sample indicate the presence of Q4 species with (Q(sup 4))Si-O-Si(Q(sup 4)) bond angles of approx.157deg. This is the first reported occurrence of Q(sup 4) species with such large bond angles in alumina free alkali silicate glass. No five- or six- coordinated Si are found.

Polarised IR-microscope spectra of guanidinium hydrogensulphate single crystal.

Science.gov (United States)

Drozd, M; Baran, J

2006-07-01

Polarised IR-microscope spectra of C(NH(2))(3)*HSO(4) small single crystal samples were measured at room temperature. The spectra are discussed on the basis of oriented gas model approximation and group theory. The stretching nuOH vibration of the hydrogen bond with the Ocdots, three dots, centeredO distance of 2.603A gives characteristic broad AB-type absorption in the IR spectra. The changes of intensity of the AB bands in function of polariser angle are described. Detailed assignments for bands derived from stretching and bending modes of sulphate anions and guanidinium cations were performed. The observed intensities of these bands in polarised infrared spectra were correlated with theoretical calculation of directional cosines of selected transition dipole moments for investigated crystal. The vibrational studies seem to be helpful in understanding of physical and chemical properties of described compound and also in design of new complexes with exactly defined behaviors.

Polarized IR-microscope spectra of guanidinium hydrogenselenate single crystal.

Science.gov (United States)

Drozd, M; Baran, J

2005-10-01

The polarized IR-microscope spectra of C(NH2)3.HSeO4 small single crystal samples were measured at room temperature. The spectra are discussed with the framework of oriented gas model approximation and group theory. The stretching nuOH vibration of the hydrogen bond with the O...O distance of 2.616 A gives characteristic broad AB-type absorption in the IR spectra. The changes of intensity of the AB bands in function of polarizer angle are described. Detailed assignment for bands derived from stretching and bending modes of selenate anions and guanidinium cations were performed. The observed intensities of these bands in polarized infrared spectra were correlated with theoretical calculation of directional cosines of selected transition dipole moments for investigated crystal. The vibrational studies seem to be helpful in understanding of physical and chemical properties of described compound and also in design of new complexes with exactly defined behaviors.

Zr 2Ir 6B with an eightfold superstructure of the cubic perovskite-like boride ZrIr 3B 0.5: Synthesis, crystal structure and bonding analysis

Science.gov (United States)

Hermus, Martin; Fokwa, Boniface P. T.

2010-04-01

Single phase powder samples and single crystals of Zr 2Ir 6B were successfully synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. Superstructure reflections were observed both on powder and on single crystal diffraction data, leading to an eightfold superstructure of ZrIr 3B x phase. The new phase, which has a metallic luster, crystallizes in space group Fm3¯m (no. 225) with the lattice parameters a=7.9903(4) Å, V=510.14(4) Å 3. Its crystal structure was refined on the basis of powder as well as single crystal data. The single crystal refinement converged to R1=0.0239 and w R2=0.0624 for all 88 unique reflections and 6 parameters. Zr 2Ir 6B is isotypic to Ti 2Rh 6B and its structure can be described as a defect double perovskite, A2BB' O6, where the A site is occupied by zirconium, the B site by boron, the O site by iridium but the B' site is vacant, leading to the formation of empty and boron-filled octahedral Ir 6 clusters. According to the result of tight-binding electronic structure calculations, Ir-B and Ir-Zr interactions are mainly responsible for the structural stability of the phase. According to COHP bonding analysis, the strongest bonding occurs for the Ir-B contacts, and the Ir-Ir bonding within the empty clusters is two times stronger than that in the BIr 6 octahedra.

Synthesis, crystal structure determination and antiproliferative activity of novel 2-amino-4-aryl-4,10-dihydro[1,3,5]triazino[1,2- a]benzimidazoles

Science.gov (United States)

Hranjec, Marijana; Pavlović, Gordana; Karminski-Zamola, Grace

2012-01-01

This manuscript describes the synthesis of novel 2-amino-4-aryl-4,10-dihydro-[1,3,5]triazino[1,2- a]benzimidazoles as hydrochloride salts 4a-n and 5b which were prepared in the reaction of cyclocondensation between 2-guanidinobenzimidazole and versatile heteroaromatic aldehydes. Structures of all prepared compounds have been studied by using 1H and 13C NMR, IR and UV/Vis spectroscopy. The crystal and molecular structure of 4f was determined by X-ray diffraction on single crystals. The molecule of 2-amino-4-(4'-methylphenyl)-4,10-dihydro[1,3,5]triazino[1,2- a]benzimidazole hydrochloride 4f (C 16H 16N 5+·Cl -) exists in the solid state in one of the possible tautomeric forms, being protonated at the one of the nitrogen atoms of the 1,4-dihydrotriazine ring. The molecule is highly delocalized within the 4,10-dihydro[1,3,5]triazino[1,2- a]benzimidazole moiety with the highest deviation from the plane for the methine carbon atom and the protonated nitrogen atom of the 1,4-dihydrotriazine ring. The cations are joined via N-H⋯N hydrogen bonds into R22(8) centrosymmetric dimers. Cation dimers are further connected with Cl - ions via N-H⋯Cl and C-H⋯Cl hydrogen bonds into 2D chains spreading along the b axis. The obtained single-crystal X-ray structure determination unequivocally confirms tautomeric form of the compound present in the solid-state and can represent tantative pattern for other prepared compounds. All prepared compounds were tested on their antiproliferative activity in vitro on several human cancer cell lines. Compound 4m was the most active one (IC 50 ≈ 20 μM), while compounds 4d, 4f, 4k, 4l4m showed moderate, but non-selective, antiproliferative activity with IC 50 25-60 μM.

Crystal structures of Er4Ni13C4 and UW4C4

International Nuclear Information System (INIS)

Khalili, M.M.; Bodak, O.I.; Marusin, E.P.; Pecharskaya, A.O.

1990-01-01

Crystal structures of Er 4 Ni 13 C 4 (1) (sp.gr. Cmmm, a=1.1975(4), b=1.1694(3), c=0.3856(1) nm, Z=2) and UW 4 C 4 (2) (sp.gr. P4/m, a=0.8328(8), c=0.31345(9) nm, Z=2), relating to new types are determined. Structural type (1) is a derivative of La 2 Ni 5 C 3 structure, structural type (2) is close to UCr 4 C 4 structure

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Spectral and laser properties of Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 crystal at 1.55 µm

Science.gov (United States)

Gong, Guoliang; Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-04-01

An Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 (CNGS) crystal was grown by the Czochralski method. Spectral properties of the crystal, including the polarized absorption and fluorescence spectra, the fluorescence decay, as well as the energy transfer efficiency from Yb3+ to Er3+ were investigated in detail. End-pumped by a 976 nm diode laser, a 1556 nm continuous-wave laser with a maximum output power of 202 mW and a slope efficiency of 11.4% was achieved in the Er,Yb,Ce:CNGS crystal. The results indicate the Er,Yb,Ce:CNGS crystal is a promising 1.55 µm laser gain medium.

Optical and dielectric properties of isothermally crystallized nano-KNbO3 in Er3+-doped K2O-Nb2O5-SiO2 glasses.

Science.gov (United States)

Chaliha, Reenamoni Saikia; Annapurna, K; Tarafder, Anal; Tiwari, V S; Gupta, P K; Karmakar, Basudeb

2010-01-01

Precursor glass of composition 25K(2)O-25Nb(2)O(5)-50SiO(2) (mol%) doped with Er(2)O(3) (0.5 wt% in excess) was isothermally crystallized at 800 degrees C for 0-100 h to obtain transparent KNbO(3) nanostructured glass-ceramics. XRD, FESEM, TEM, FTIRRS, dielectric constant, refractive index, absorption and fluorescence measurements were carried out to analyze the morphology, dielectric, structure and optical properties of the glass-ceramics. The crystallite size of KNbO(3) estimated from XRD and TEM is found to vary in the range 7-23 nm. A steep rise in the dielectric constant of glass-ceramics with heat-treatment time reveals the formation of ferroelectric nanocrystalline KNbO(3) phase. The measured visible photoluminescence spectra have exhibited green emission transitions of (2)H(11/2), (4)S(3/2)-->(4)I(15/2) upon excitation at 377 nm ((4)I(15/2)-->(4)G(11/2)) absorption band of Er(3+) ions. The near infrared (NIR) emission transition (4)I(13/2)-->(4)I(15/2) is detected around 1550 nm on excitation at 980 nm ((4)I(15/2)-->(4)I(11/2)) of absorption bands of Er(3+) ions. It is observed that photoluminescent intensity at 526 nm ((2)H(11/2)-->(4)I(15/2)), 550 nm ((4)S(3/2)-->(4)I(15/2)) and 1550 nm ((4)I(13/2)-->(4)I(15/2)) initially decrease and then gradually increase with increase in heat-treatment time. The measured lifetime (tau(f)) of the (4)I(13/2)-->(4)I(15/2) transition also possesses a similar trend. The measured absorption and fluorescence spectra reveal that the Er(3+) ions gradually enter into the KNbO(3) nanocrystals. Copyright 2009 Elsevier B.V. All rights reserved.

Neutron diffraction study of single crystalline ErCo10Mo2

International Nuclear Information System (INIS)

Janssen, Y.; De Boer, F.R.; Brueck, E.; Tegus, O.; Ma, L.; Buschow, K.H.J.; Reehuis, M.

1999-01-01

Complete text of publication follows. The ferrimagnetic intermetallic compound ErCo 10 Mo 2 (Tc = 600 K) crystallizes in the tetragonal ThMn 12 -type structure (space group 14/mmm). The Co and Mo atoms may share three crystallographic sites (8f, 8i and 8j). Earlier neutron powder diffraction experiments show that Mo has a strong preference for the 8i-site and that the magnetic ordering at low temperature is planar. Furthermore ErCo 10 Mo 2 has been reported to show one [2] or more [3] spin-reorientation transitions from planar to axial magnetic ordering. Recently we succeeded in growing a single-crystalline sample of ErCo 10 Mo 2 . Magnetic measurements in 1T show one spin-reorientation transition at about 135 K. Neutron diffraction experiments were performed to investigate a possible link between the magnetic properties and the site occupation by Mo. Our results show that our sample has the Mo atoms exclusively occupying half the 8i-sites. There is no evidence for a crystallographic superstructure. Furthermore, below 150 K some reflections strongly increase due to the growing Er magnetic moment. (author)

The Tl{sub 2}S–PbS–SiS{sub 2} system and the crystal and electronic structure of quaternary chalcogenide Tl{sub 2}PbSiS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mozolyuk, M.Y.; Piskach, L.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska Street, 79010, Lviv (Ukraine); Olekseyuk, I.D.; Parasyuk, O.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, 03142, Kyiv (Ukraine)

2017-07-01

Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized in the evacuated silica ampoules by the melting and annealing technique. Phase equilibria in the system was investigated by XRD method. Isothermal section of the system was studied, and two intermediate quaternary phases were discovered to exist (Tl{sub 2}PbSiS{sub 4}, ∼Tl{sub 2}PbSi{sub 3}S{sub 8}). The quasi-binary section Tl{sub 2}SiS{sub 3}–PbS was investigated by DTA. Its phase diagram was constructed, and it was established that the equimolar compound melts incongruently at 818 K. The crystal structure of the quaternary compound Tl{sub 2}PbSiS{sub 4} was determined by X-ray powder diffraction. It crystallizes in the monoclinic space group P2{sub 1}/a with the unit-cell parameters a = 8.8141(4), b = 9.0150(5), c = 10.4383(5) Å, and β = 94.490(4)° (Tl{sub 2}PbGeS{sub 4} structure type). Reliability factors calculated in the isotropic approximation were found to be R{sub I} = 0.0564 and R{sub P} = 0.1070. The Tl{sub 2}PbSiS{sub 4} single crystal was tested with X-ray photoelectron spectroscopy. In particular, the XPS core-level and valence-band spectra were recorded for pristine and Ar{sup +}-ion bombarded surfaces of Tl{sub 2}PbSiS{sub 4}. The Tl{sub 2}PbSiS{sub 4} single crystal was found to be rather stable with respect to Ar{sup +}-ion irradiation. We have also measured the X-ray emission band depicting the energy distribution of mainly the S 3p states and compared it on a common energy scale with the XPS valence-band spectrum of the Tl{sub 2}PbSiS{sub 4} crystal. The above comparison indicates that the S 3p states contribute substantively in the upper portion of the valence band of Tl{sub 2}PbSiS{sub 4}, with their significant contributions in other portions of the valence-band region. - Highlights: • Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized. • Two intermediate quaternary phases were discovered to exist (Tl

Ternary systems Sr-{Ni,Cu}-Si: Phase equilibria and crystal structure of ternary phases

International Nuclear Information System (INIS)

Nasir, Navida; Melnychenko-Koblyuk, Nataliya; Grytsiv, Andriy; Rogl, Peter; Giester, Gerald; Wosik, Jaroslaw; Nauer, Gerhard E.

2010-01-01

Phase relations were established in the Sr-poor part of the ternary systems Sr-Ni-Si (900 deg. C) and Sr-Cu-Si (800 deg. C) by light optical microscopy, electron probe microanalysis and X-ray diffraction on as cast and annealed alloys. Two new ternary compounds SrNiSi 3 (BaNiSn 3 -type) and SrNi 9-x Si 4+x (own-type) were found in the Sr-Ni-Si system along with previously reported Sr(Ni x Si 1-x ) 2 (AlB 2 -type). The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type. At higher Si-content X-ray Rietveld refinements reveal the formation of a vacant site (□) corresponding to a formula SrNi 5.5 Si 6.5 □ 1.0 . Phase equilibria in the Sr-Cu-Si system are characterized by the compounds SrCu 2-x Si 2+x (ThCr 2 Si 2 -type), Sr(Cu x Si 1-x ) 2 (AlB 2 -type), SrCu 9-x Si 4+x (0≤x≤1.0; CeNi 8.5 Si 4.5 -type) and SrCu 13-x Si x (4≤x≤1.8; NaZn 13 -type). The latter two structure types appear within a continuous solid solution. Neither a type-I nor a type-IX clathrate compound was encountered in the Sr-{Cu,Ni}-Si systems. Structural details are furthermore given for about 14 new ternary compounds from related alloy systems with Ba. - Graphical abstract: The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type and is related to CeNi 8.5 Si 4.5 -type.

Magnetic properties of single crystalline Mn{sub 4}Si{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Gottlieb, U.; Sulpice, A.; Lambert-Andron, B.; Laborde, O

2003-10-27

A single crystal of MnSi{sub 2-x} was obtained by a modified Czochralski pulling technique in a cold copper crucible. The quality and the nature of the sample were checked by an accurate crystal structure determination, which revealed the sample to be Mn{sub 4}Si{sub 7}. Resistivity and magnetic measurements were performed on this sample in the temperature range between 2 K and room temperature and in magnetic fields up to 7.5 T. Mn{sub 4}Si{sub 7} shows a metallic behaviour and the good crystal quality was revealed by the high residual resistance ratio of 360. For the magnetic susceptibility we observed a Curie-Weiss law above about 40 K with a low effective moment of p{sub eff}=0.365 {mu}{sub B}/Mn. Below this temperature, moments order in an anisotropic helical state, and in fields above 1 T, they align with a saturation moment of p{sub sat}=0.012 {mu}{sub B}/Mn. Mn{sub 4}Si{sub 7} is a weak itinerant magnetic system that could be a good candidate for the observation of the critical quantum fluctuations expected for marginal Fermi liquids.

Laser frequency stabilization at 1.5 microns using ultranarrow inhomogeneous absorption profiles in Er3+:LiYF4

International Nuclear Information System (INIS)

Boettger, Thomas; Pryde, G.J.; Thiel, C.W.; Cone, R.L.

2007-01-01

Single-frequency diode lasers have been frequency stabilized to 1.5 kHz Allan deviation over 0.05-50 s integration times, with laser frequency drift reduced to less than 1.4 kHz/min, using the frequency reference provided by an ultranarrow inhomogeneously broadened Er 3+ : 4 I 15/2 →4 I 13/2 optical absorption transition at a vacuum wavelength of 1530.40 nm in a low-strain LiYF 4 crystal. The 130 MHz full-width at half-maximum (FWHM) inhomogeneous line width of this reference transition is the narrowest reported for a solid at 1.5 μm. Strain-induced inhomogeneous broadening was reduced by using the single isotope 7 Li and by the very similar radii of Er 3+ and the Y 3+ ions for which it substitutes. To show the practicability of cryogen-free cooling, this laser stability was obtained with the reference crystal at 5 K; moreover, this performance did not require vibrational isolation of either the laser or crystal frequency reference. Stabilization is feasible up to T=25 K where the Er 3+ absorption thermally broadens to ∼500 MHz. This stabilized laser system provides a tool for interferometry, high-resolution spectroscopy, real-time optical signal processing based on spatial spectral holography and accumulated photon echoes, secondary frequency standards, and other applications such as quantum information science requiring narrow-band light sources or coherent detection

Electronic structure and optical properties of LiGa0.5In0.5Se2 single crystal, a nonlinear optical mid-IR material

Science.gov (United States)

Lavrentyev, A. A.; Gabrelian, B. V.; Vu, Tuan V.; Isaenko, L. I.; Yelisseyev, A. P.; Khyzhun, O. Y.

2018-06-01

Measurements of X-ray photoelectron core-level and valence-band spectra for pristine and irradiated with Ar+ ions surfaces of LiGa0.5In0.5Se2 single crystal, novel nonlinear optical mid-IR selenide grown by a modified vertical Bridgman-Stockbarger technique, are reported. Electronic structure of LiGa0.5In0.5Se2 is elucidated from theoretical and experimental points of view. Notably, total and partial densities of states (DOSs) of the LiGa0.5In0.5Se2 compound are calculated based on density functional theory (DFT) using the augmented plane wave + local orbitals (APW + lo) method. In accordance with the DFT calculations, the principal contributors to the valence band are the Se 4p states, making the main input at the top and in the upper part of the band, while its bottom is dominated by contributions of the valence s states associated with Ga and In atoms. The theoretical total DOS curve peculiarities are found to be in excellent agreement with the shape of the X-ray photoelectron valence-band spectrum of the LiGa0.5In0.5Se2 single crystal. The bottom of the conduction band of LiGa0.5In0.5Se2 is formed mainly by contributions of the unoccupied Ga 4s and In 5s states in almost equal proportion, with somewhat smaller contributions of the unoccupied Se 4p states as well. Our calculations indicate that the LiGa0.5In0.5Se2 compound is a direct gap semiconductor. The principal optical constants of LiGa0.5In0.5Se2 are calculated in the present work.

Thermal expansion of the magnetorefrigerant Gd5(Si,Ge)4

NARCIS (Netherlands)

Brück, E.H.; Nazih, M.; de Visser, A.; Zhang, L.; Tegus, O.

2003-01-01

We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T0~240 K, large steps in the relative length change ÄL/L along the principle crystallographic axes are observed. The

Ternary rare-earth bismuthides RE5SiBi 2 and RE5GeBi 2 ( RE=La-Nd, Gd-Er): Stabilization of the β-Yb 5Sb 3-type structure through tetrel substitution

Science.gov (United States)

Barry, Stephen D.; Tkachuk, Andriy V.; Bie, Haiying; Blanchard, Peter E. R.; Mar, Arthur

2011-01-01

Ternary bismuthides RE5TtBi 2 containing rare-earth ( RE=La-Nd, Gd-Er) and tetrel ( Tt=Si, Ge) atoms have been prepared by arc-melting of the elements followed by annealing at 800 °C. They adopt the β-Yb 5Sb 3-type structure (Pearson symbol o P32, space group Pnma, Z=4), as revealed through analysis by single-crystal X-ray diffraction on Ce 5Si 0.869(4)Bi 2.131(4) and powder X-ray diffraction on Ce 5GeBi 2. Cell parameters for the entire series lie in the ranges of a=12.8-11.8 Å, b=9.6-9.0 Å, and c=8.4-7.9 Å. Solid solubility in Ce 5Si xBi 3- x and Pr 5Si xBi 3- x (approximately 0.9≤ x≤1.2, depending on the RE member) is much more limited compared to the antimonides, consistent with a highly ordered structure in which the two possible anion sites are essentially segregated into a smaller one occupied by Tt atoms (CN7) and a larger one occupied by Bi atoms (CN9). Band structure calculations on La 5SiBi 2 confirm the importance of La-La bonding interactions near the Fermi level. X-ray photoelectron spectra support the presence of partially anionic Bi atoms, as indicated by a small negative binding energy shift relative to elemental Bi. The Ce and Pr members undergo magnetic transitions at low temperatures, possibly involving ferromagnetic interactions, that are strongly influenced by the nature of the Tt atom.

Ternary rare-earth bismuthides RE5SiBi2 and RE5GeBi2 (RE=La-Nd, Gd-Er): Stabilization of the β-Yb5Sb3-type structure through tetrel substitution

International Nuclear Information System (INIS)

Barry, Stephen D.; Tkachuk, Andriy V.; Bie, Haiying; Blanchard, Peter E.R.; Mar, Arthur

2011-01-01

Ternary bismuthides RE 5 TtBi 2 containing rare-earth (RE=La-Nd, Gd-Er) and tetrel (Tt=Si, Ge) atoms have been prepared by arc-melting of the elements followed by annealing at 800 o C. They adopt the β-Yb 5 Sb 3 -type structure (Pearson symbol oP32, space group Pnma, Z=4), as revealed through analysis by single-crystal X-ray diffraction on Ce 5 Si 0.869(4) Bi 2.131(4) and powder X-ray diffraction on Ce 5 GeBi 2 . Cell parameters for the entire series lie in the ranges of a=12.8-11.8 A, b=9.6-9.0 A, and c=8.4-7.9 A. Solid solubility in Ce 5 Si x Bi 3-x and Pr 5 Si x Bi 3-x (approximately 0.9≤x≤1.2, depending on the RE member) is much more limited compared to the antimonides, consistent with a highly ordered structure in which the two possible anion sites are essentially segregated into a smaller one occupied by Tt atoms (CN7) and a larger one occupied by Bi atoms (CN9). Band structure calculations on La 5 SiBi 2 confirm the importance of La-La bonding interactions near the Fermi level. X-ray photoelectron spectra support the presence of partially anionic Bi atoms, as indicated by a small negative binding energy shift relative to elemental Bi. The Ce and Pr members undergo magnetic transitions at low temperatures, possibly involving ferromagnetic interactions, that are strongly influenced by the nature of the Tt atom. -- Graphical Abstract: Tetrel (Si or Ge) and Bi atoms are arranged in an ordered manner in the β-Yb 5 Sb 3 -type structure adopted by RE 5 TtBi 2 . Display Omitted

Preparation, crystallography, magnetic and magnetothermal properties of Ce₅Si_xGe_4-x alloys

Energy Technology Data Exchange (ETDEWEB)

Vijayaraghavan, Rangarajan [Iowa State Univ., Ames, IA (United States)

2005-01-01

An investigation of the crystal structure and the phase relationships in the Ce₅Si_4-xGe_x system has been carried out. The crystal structures of the single phase intermetallics were characterized using X-ray powder diffraction and subsequent refinement employing the Rietveld analysis technique was performed. The intermetallic system was found to crystallize in three distinct crystal structures. The Ce₅Si₄-based solid solution extends from x = 0 to x = 2.15 and it was found to crystallize in the well-known Zr₅Si₄-type tetragonal structure. The germanium rich alloys, where 3.1 ≤} x ≤ 4, crystallized in the Sm₅Ge₄-type orthorhombic structure. The crystal structure of the intermediate phase, when 2.35 ≤ x ≤ 2.8, was found out to be of the Gd₅Si₂Ge₂-type monoclinic structure. Microhardness tests were conducted on the samples in order to probe the trend in mechanical properties in this alloy system as a function of Ge concentration. The magnetic, thermal and magnetocaloric properties of the Ce₅Si_4-xGe_x alloy system have been investigated for x = 0, 1.0, 1.8, 2.5, 2.8, 3.5, 3.8 and 4.0. The phases with x = 0, 1.0 and 1.8 crystallize in the tetragonal Zr₅Si₄ structure and those with x = 2.5, 2.8 form in the Gd₅Si₂Ge₂-type monoclinic structure. The alloys with x = 3.5, 3.8 and 4.0 crystallize in the Sm₅Ge₄-type orthorhombic structure. The Curie temperature of the tetragonal phases increases with increasing Ge content. The ordering temperatures of the monoclinic and orthorhombic phases remain nearly unaffected by the composition, with the Curie temperatures of the latter slightly higher than those of the former. All the alloys display evidence of antiferromagnetic interactions in the ground state. The orthorhombic and the

Thermal, Spectral and Laser Properties of Er3+:Yb3+:GdMgB₅O10: A New Crystal for 1.5 μm Lasers.

Science.gov (United States)

Huang, Yisheng; Yuan, Feifei; Sun, Shijia; Lin, Zhoubin; Zhang, Lizhen

2017-12-25

A novel laser crystal of Er 3+ :Yb 3+ :GdMgB₅O 10 with dimension of 26 × 16 × 12 mm³ was grown successfully from K₂Mo₃O 10 flux by the top seeded solution growth method. The thermal diffusivity and specific heat capacity were measured to calculate the thermal conductivity of the crystal. The absorption and fluorescence properties of the crystal at room temperature were investigated in detail. The Judd-Ofelt method was used to analyze the polarized absorption spectra. The emission cross-section of the ⁴I 13/2 →⁴I 15/2 transition was calculated by the Füchtbauer-Ladenburg formula and the relevant gain cross-sections were estimated. Continuous-wave laser output of 140 mW at 1569 nm with the slope efficiency of 17.8% was demonstrated in a plano-concave resonator. The results reveal that Er 3+ :Yb 3+ :GdMgB₅O 10 crystal is a promising material for 1.5 μm lasers.

Absorption intensities and emission cross sections of principal intermanifold and inter-Stark transitions of Er3+(4f 11) in polycrystalline ceramic garnet Y3Al5O12

International Nuclear Information System (INIS)

Sardar, Dhiraj K.; Russell, Charles C. III; Gruber, John B.; Allik, Toomas H.

2005-01-01

A comparative spectroscopic study is performed on Er 3+ (4f 11 ) ions doped in polycrystalline ceramic garnet Y 3 Al 5 O 12 (YAG) and single-crystal laser rod, both containing nominal 50 at. % of Er 3+ . The standard Judd-Ofelt (JO) model is applied to the room-temperature absorption intensities of Er 3+ (4f 11 ) transitions in both hosts to obtain the phenomenological intensity parameters. These parameters are subsequently used to determine the radiative decay rates, radiative lifetimes, and branching ratios of the Er 3+ transitions from the upper multiplet manifolds to the corresponding lower-lying multiplet manifolds 2S+1 L J of Er 3+ (4f 11 ) in these garnet hosts. The emission cross sections of the intermanifold Er 3+ 4 I 13/2 → 4 I 15/2 (1.5 μm) transition as well as the principal inter-Stark transition Y 1 →Z 4 (1550 nm) within the corresponding multiplet manifolds have been determined. The room-temperature fluorescence lifetimes of the 4 I 13/2 → 4 I 15/2 (1.5 μm) transition in both polycrystalline ceramic and single-crystal YAG samples were measured. From the radiative lifetimes determined from the JO model and the measured fluorescence lifetimes, the quantum efficiencies for both samples were determined. The comparative study of Er 3+ (4f 11 ) ions performed suggests that polycrystalline ceramic YAG is an excellent alternative to single-crystal YAG rod for certain applications

Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

Science.gov (United States)

Pramann, Axel; Rienitz, Olaf

2016-06-07

A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

Crystal field in ErGa3 - a neutron spectroscopy study

International Nuclear Information System (INIS)

Murasik, A.; Czopnik, A.; Clementyev, E.; Schefer, J.

2000-01-01

The splitting of the J = 15/2 multiplet of Er in a cubic crystal field has been determined by inelastic scattering from a polycrystalline sample of ErGa 3 . On the base of observed intensities and their temperature variation we have been able to determine two crystal electric fields (CEF) parameters required for cubic symmetry. Least-squares fits of calculated crystal field transitions of the observed neutron inelastic scattering spectra taken at 12, 24, 32, 40, 50 and 80 K, gave the crystal field parameters: B 4 (7.15±0.05) x 10 -5 and B 6 = (1.28±0.05) x 1- -6 MeV yielding the Γ 7 doublet as a ground level with the overall splitting of 10.92 MeV. The results are used to calculate the temperature-depended zero field magnetization and the Schottky anomaly of the heat capacity of the ErGa 3 which yield reasonable agreement with experimental data obtained earlier. (author)

Si{sub 3}N{sub 4} optomechanical crystals in the resolved-sideband regime

Energy Technology Data Exchange (ETDEWEB)

Davanço, M., E-mail: mdavanco@nist.gov [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States); Ates, S.; Liu, Y. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Maryland NanoCenter, University of Maryland, College Park, Maryland 20742 (United States); Srinivasan, K. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

2014-01-27

We demonstrate sideband-resolved Si{sub 3}N{sub 4} optomechanical crystals supporting 10{sup 5} quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers in excess of 10{sup 4}.

Solid-state syntheses and single-crystal characterizations of three tetravalent thorium and uranium silicates

International Nuclear Information System (INIS)

Jin, Geng Bang; Soderholm, L.

2015-01-01

Colorless crystals of ThSiO 4 (huttonite) (1) and (Ca 0.5 Na 0.5 ) 2 NaThSi 8 O 20 (2) have been synthesized by the solid-state reactions of ThO 2 , CaSiO 3 , and Na 2 WO 4 at 1073 K. Green crystals of (Ca 0.5 Na 0.5 ) 2 NaUSi 8 O 20 (3) have been synthesized by the solid-state reactions of UO 2 , CaSiO 3 , and Na 2 WO 4 at 1003 K. All three compounds have been characterized by single-crystal X-ray diffraction. Compound 1 adopts a monazite-type three-dimensional condensed structure, which is built from edge- and corner-shared ThO 9 polyhedra and SiO 4 tetrahedra. Compounds 2 and 3 are isostructural and they crystallize in a steacyite-type structure. The structure consists of discrete pseudocubic [Si 8 O 20 ] 8− polyanions, which are connected by An 4+ cations into a three-dimensional framework. Each An atom coordinates to eight monodentate [Si 8 O 20 ] 8− moieties in a square antiprismatic geometry. Na + and Ca 2+ ions reside in the void within the framework. Raman spectra of 1, 2, and 3 were collected on single crystal samples. 1 displays more complex vibrational bands than thorite. Raman spectra of 2 and 3 are analogous with most of vibrational bands located at almost the same regions. - Graphical abstract: A Raman spectrum and crystal structures of (Ca 0.5 Na 0.5 ) 2 NaAnSi 8 O 20 (An=Th, U), which contain pseudocubic [Si 8 O 20 ] 8− polyanions and eight-coordinate An 4+ cations. - Highlights: • Single crystal growth of three tetravalent actinide silicates from melts. • Single-crystal structures and Raman spectra of (Ca 0.5 Na 0.5 ) 2 NaAnSi 8 O 20 (An=Th, U). • First report of Raman spectrum of huttonite on single crystal samples

Shock and Release Data on Forsterite (Mg2SiO4) Single Crystals

Science.gov (United States)

Root, S.; Townsend, J. P.; Shulenburger, L.; Davies, E.; Kraus, R. G.; Spaulding, D.; Stewart, S. T.; Jacobsen, S. B.; Mattsson, T. R.

2016-12-01

The Kepler mission has discovered numerous extra-solar rocky planets with sizes ranging from Earth-size to the super-Earths with masses 40 times larger than Earth. The solid solution series of (Mg, Fe)2SiO4 (olivine) is a major component in the mantle of Earth and likely these extra-solar rocky planets. However, understanding how the (Mg, Fe)2SiO4 system behaves at Earth like and super-Earth like pressures is still unknown. Using Sandia's Z machine facility, we shock compress single crystal forsterite, the Mg end-member of the olivine series. Solid aluminum flyers are accelerated up to 28 km/s to generate steady shock states up to 950 GPa. Release states from the Hugoniot are determined as well. In addition to experiments, we perform density functional theory (DFT) calculations to examine the potential phases along the Mg2SiO4 Hugoniot. We compare our results to other recent shock experiments on forsterite. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.

Large rotating field entropy change in ErFeO3 single crystal with angular distribution contribution

Science.gov (United States)

Huang, Ruoxiang; Cao, Shixun; Ren, Wei; Zhan, Sheng; Kang, Baojuan; Zhang, Jincang

2013-10-01

We report the rotating field entropy of ErFeO3 single-crystal in a temperature range of 3-40 K. The giant magnetic entropy change, ΔSM = -20.7 J/(kg K), and the refrigerant capacity, RC = 273.5 J/kg, are observed near T =6 K. The anisotropic constants at 6 K, K1 = 1.24× 103 J/kg, K2 = 0.74 × 103 J/kg, in the bc plane are obtained. By considering the magnetocrystalline anisotropy and Fermi-Dirac angular distribution along the orientation of spontaneous magnetization, the experimental results can be well simulated. Our present work demonstrates that ErFeO3 crystal may find practical use for low temperature anisotropic magnetic refrigeration.

A Novel Effect of CO2 Laser Induced Piezoelectricity in Ag2Ga2SiS6 Chalcogenide Crystals

Directory of Open Access Journals (Sweden)

Oleg V. Parasyuk

2016-08-01

Full Text Available We have discovered a substantial enhancement of the piezoelectric coefficients (from 10 to 78 pm/V in the chalcogenide Ag2Ga2SiS6 single crystals. The piezoelectric studies were done under the influence of a CO2 laser (wavelength 10.6 μm, time duration 200 ns, lasers with power densities varying up to 700 MW/cm2. Contrary to the earlier studies where the photoinduced piezoelectricity was done under the influence of the near IR lasers, the effect is higher by at least one order, which is a consequence of the phonon anharmonic contributions and photopolarizations. Such a discovery allows one to build infrared piezotronic devices, which may be used for the production of the IR laser tunable optoelectronic triggers and memories. This is additionally confirmed by the fact that analogous photoillumination by the near IR laser (Nd:YAG (1064 nm and Er:glass laser (1540 nm gives the obtained values of the effective piezoelectricity at of least one order less. The effect is completely reversible with a relaxation time up to several milliseconds. In order to clarify the role of free carriers, additional studies of photoelectrical spectra were done.

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Energy Technology Data Exchange (ETDEWEB)

Qiusheng, Y., E-mail: qsyan@gdut.edu.cn; Senkai, C., E-mail: senkite@sina.com; Jisheng, P., E-mail: panjisheng@gdut.edu.cn [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou, 510006 (China)

2015-03-30

Different machining processes were used in the single crystal SiC wafer machining. SEM was used to observe the surface morphology and a cross-sectional cleavages microscopy method was used for subsurface cracks detection. Surface and subsurface cracks characteristics of single crystal SiC wafer in abrasive machining were analysed. The results show that the surface and subsurface cracks system of single crystal SiC wafer in abrasive machining including radial crack, lateral crack and the median crack. In lapping process, material removal is dominated by brittle removal. Lots of chipping pits were found on the lapping surface. With the particle size becomes smaller, the surface roughness and subsurface crack depth decreases. When the particle size was changed to 1.5µm, the surface roughness Ra was reduced to 24.0nm and the maximum subsurface crack was 1.2µm. The efficiency of grinding is higher than lapping. Plastic removal can be achieved by changing the process parameters. Material removal was mostly in brittle fracture when grinding with 325# diamond wheel. Plow scratches and chipping pits were found on the ground surface. The surface roughness Ra was 17.7nm and maximum subsurface crack depth was 5.8 µm. When grinding with 8000# diamond wheel, the material removal was in plastic flow. Plastic scratches were found on the surface. A smooth surface of roughness Ra 2.5nm without any subsurface cracks was obtained. Atomic scale removal was possible in cluster magnetorheological finishing with diamond abrasive size of 0.5 µm. A super smooth surface eventually obtained with a roughness of Ra 0.4nm without any subsurface crack.

Comparative study of optical and scintillation properties of YVO{sub 4}, (Lu{sub 0.5}Y{sub 0.5})VO{sub 4}, and LuVO{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, Yutaka, E-mail: fuji-you@tagen.tohoku.ac.j [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yanagida, Takayuki; Yokota, Yuui; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kochurikhin, Vladimir V. [General Physics Institute, 38 Vavilov Street, 119991, Federation, Moscow (Russian Federation); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); NICHe, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2011-04-11

Optical and scintillation properties of YVO{sub 4}, (Lu{sub 0.5}Y{sub 0.5})VO{sub 4}, and LuVO{sub 4} single crystals grown by the Czochralski (CZ) method with RF heating system are compared. All vanadate crystals show high transmittance ({approx}80%) in the 400-900 nm wavelength range. In both photo- and radio-luminescence spectra, intense peak around 400-500 nm, which was ascribed to the transition from triplet state of VO{sub 4}{sup 3-}, was clearly observed. The main decay time component was about 38 {mu}s (YVO{sub 4}), 18 {mu}s ((Lu{sub 0.5}Y{sub 0.5})VO{sub 4}), and 17 {mu}s (LuVO{sub 4}) under 340 nm excitation. The scintillation light yields of YVO{sub 4}, (Lu{sub 0.5}Y{sub 0.5})VO{sub 4}, and LuVO{sub 4} crystals (obtained from the {sup 137}Cs excited pulse height spectra) were evaluated to be about 11,200, 10,700, and 10,300 ph/MeV, respectively.

Effect of neutron irradiation on single crystal V3Si

International Nuclear Information System (INIS)

Viswanathan, R.; Caton, R.; Cox, D.E.; Guha, A.; Sarachik, M.P.; Smith, F.W.; Testardi, L.R.

1977-01-01

We We have investigated the effect of successive neutron irradiation up to a fluence of approximately 2 x 10 19 n/cm 2 , by measurements of heat capacity, susceptibility, resistivity, acoustic velocity and neutron diffraction in a single crystal V 3 Si. We find that for low level doses (phi t greater than or equal to 3.5 x 10 18 n/cm 2 ) (a) the structural transformation is very sensitive, whereas the suerconducting transition temperature, T/sub c/, is hardly affected, and (b) except for low temperature heat capacity, most of the other measurements show very little change. For the highest fluence of 2 x 10 19 n/cm 2 used to date, the T/sub c/ dropped to 7.5 K with large changes in the linear heat capacity coefficient, magnetic susceptibility and sound velocity. These results are discussed briefly in this paper

Ion implantation effects in single crystal Si investigated by Raman spectroscopy

International Nuclear Information System (INIS)

Harriman, T.A.; Lucca, D.A.; Lee, J.-K.; Klopfstein, M.J.; Herrmann, K.; Nastasi, M.

2009-01-01

A study of the effects of Ar ion implantation on the structural transformation of single crystal Si investigated by confocal Raman spectroscopy is presented. Implantation was performed at 77 K using 150 keV Ar ++ with fluences ranging from 2 x 10 13 to 1 x 10 15 ions/cm 2 . The Raman spectra showed a progression from crystalline to highly disordered structure with increasing fluence. The 520 cm -1 c-Si peak was seen to decrease in intensity, broaden and exhibit spectral shifts indicating an increase in lattice disorder and changes in the residual stress state. In addition, an amorphous Si band first appeared as a shoulder on the 520 cm -1 peak and then shifted to lower wavenumbers as a single broadband peak with a spectral center of 465 cm -1 . Additionally, the emergence of the a-Si TA phonon band and the decrease of the c-Si 2TA and 2TO phonon bands also indicated the same structural transition from crystalline to highly disordered. The Raman results were compared to those obtained by channeling RBS.

Microstructure study of the rare-earth intermetallic compounds R₅(Si_xGe_1-x)₄ and R₅(Si_xGe_1-x)₃

Energy Technology Data Exchange (ETDEWEB)

Cao, Qing [Iowa State Univ., Ames, IA (United States)

2012-01-01

The unique combination of magnetic properties and structural transitions exhibited by many members of the R₅(Si_xGe_1-x)₄ family (R = rare earths, 0 ≤ x ≤ 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R₅(Si_xGe_1-x)₄ compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er₅Si₄ compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd₅Si₄-type orthorhombic to Gd₅Si₂Ge₂-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 °C.

Luminescence of Er3+ doped double lead halide crystals under X-ray, UV, VIS and IR excitation

Science.gov (United States)

Serazetdinov, A. R.; Smirnov, A. A.; Pustovarov, V. A.; Isaenko, L. I.

2017-09-01

Er3+ doped double lead halide crystals incorporate a number of properties making them interesting for practical use in light conducting materials. X-ray excited luminescence (XRL) spectra, photoluminescence (PL) spectra in region of 1.5-3.5 eV, photoluminescence excitation (PLE) spectra (2.75-5 eV) and anti-stokes luminescence (ASL) spectra were measured at room temperature in KPb2Cl5 (KPC) and RbPb2Br5 (RPB) matrices doped with Er3+ (1%) ions and in KPC doped with Er3++ Yb3+ ions(1:3 ratio concentration). Intraconfigurational f→f transitions are observed in Er3+ ions in most of the cases. The concrete spectrum form is strongly dependent on the excitation energy. Under 980 nm excitation upper Er3+ levels are excited, showing upconversional processes. In case of 313 nm (UV) and 365 nm (VIS) excitation self trapped exciton luminescence was detected in RPB crystal. Additional Yb3+ doping ions strongly increase quantum yield under 980 nm excitation and this doping cause insignificant influence on quantum yield under VIS or UV excitation.

Raman and optical absorption spectroscopic investigation of Yb-Er codoped phosphate glasses containing SiO2

Institute of Scientific and Technical Information of China (English)

Youkuo Chen; Lei Wen; Lili Hu; Wei Chen; Y. Guyot; G. Boulon

2009-01-01

Yb-Er codoped Na2O-Al2O3-P2Os-xSiO2 glasses containing 0 鈥? 20 mol% SiO2 were prepared successfully. The addition of SiO2 to the phosphate glass not only lengthens the bond between P5+ and non-bridging oxygen but also reduces the number of P=O bond. In contrast with silicate glass in which there is only four-fold coordinated Si4+, most probably there coexist [SiO4] tetrahedron and [SiO6] octahedron in our glasses. Within the range of 0 鈥? 20 mol% SiO2 addition, the stimulated emission cross-section of Er3+ ion only decreases no more than 10%. The Judd-Ofelt intensity parameters of Er3+, 惟.2 does not change greatly, but 惟74 and 惟6 decrease obviously with increasing SiO2 addition, because the bond between Er + and O2- is more strongly covalently bonded.

Synthesis, antityrosinase activity of curcumin analogues, and crystal structure of (1E,4E)-1,5-bis(4-ethoxyphenyl)penta-1,4-dien-3-one

Energy Technology Data Exchange (ETDEWEB)

Chantrapromma, S., E-mail: suchada.c@psu.ac.th; Ruanwas, P. [Prince of Songkla University, Department of Chemistry, Faculty of Science (Thailand); Boonnak, N. [Thaksin University, Department of Basic Science and Mathematics, Faculty of Science (Thailand); Chantrapromma, K. [Hatyai University, Faculty of Science and Technology (Thailand); Fun, H.-K. [Universiti Sains Malaysia, X-ray Crystallography Unit, School of Physics (Malaysia)

2016-12-15

Five derivatives of curcumin analogue (R = OCH{sub 2}CH{sub 3} (1), R = N(CH{sub 3}){sub 2} (2), R = 2,4,5-OCH{sub 3} (3), R = 2,4,6-OCH{sub 3} (4), and R = 3,4,5-OCH{sub 3} (5)) were synthesized and characterized by {sup 1}H NMR, FT-IR and UV–Vis spectroscopy. The synthesized derivatives were screened for antityrosinase activity, and found that 4 and 5 possess such activity. The crystal structure of 1 was determined by single crystal X-ray diffraction: monoclinic, sp. gr. P2{sub 1}/c, a = 17.5728(15) Å, b = 5.9121(5) Å, c = 19.8269(13) Å, β = 121.155(5)°, Z = 4. The molecule 1 is twisted with the dihedral angle between two phenyl rings being 15.68(10)°. In the crystal packing, the molecules 1 are linked into chains by C−H···π interactions and further stacked by π···π interactions with the centroid–centroid distance of 3.9311(13) Å.

Luminescence and scintillation timing characteristics of (Lu{sub x}Gd{sub 2−x})SiO{sub 5}:Ce single crystals

Energy Technology Data Exchange (ETDEWEB)

Yawai, Nattasuda; Chewpraditkul, Warut; Sakthong, Ongsa [Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok10140 (Thailand); Chewpraditkul, Weerapong, E-mail: weerapong.che@kmutt.ac.th [Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok10140 (Thailand); Wantong, Kriangkrai [Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok10140 (Thailand); Szczesniak, Tomasz; Swiderski, Lukasz; Moszynski, Marek [National Centre for Nuclear Research, A. Soltana 7, PL 05-400 Otwock-Swierk (Poland); Sidletskiy, Oleg [Institute for Scintillation Materials NAS of Ukraine, 60 Nauky Avenue, 61001 Kharkiv (Ukraine)

2017-02-01

The luminescence and scintillation characteristics of cerium-doped lutetium-gadolinium orthosilicate (Lu{sub x}Gd{sub 2−x}SiO{sub 5}:Ce; x=0, 0.8, 1.8) single crystals were investigated. At 662 keV γ-rays, the light yield of 29,800±3000 ph MeV{sup −1} obtained for Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce is higher than that of 20,200±2000 and 11,800±1200 ph MeV{sup −1} obtained for Lu{sub 0.8}Gd{sub 1.2}SiO{sub 5}:Ce and Gd{sub 2}SiO{sub 5}:Ce, respectively. The fast component decay time of 32, 18 and 17 ns was measured in the scintillation decay of Gd{sub 2}SiO{sub 5}:Ce, Lu{sub 0.8}Gd{sub 1.2}SiO{sub 5}:Ce and Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce, respectively. The coincidence time spectra for 511 keV annihilation quanta were measured in reference to a fast BaF{sub 2} detector and time resolution was discussed in terms of a number of photoelectrons and decay time of the fast component. The mass attenuation coefficient for studied crystals at 60 and 662 keV γ-rays was also evaluated and discussed. - Highlights: • Scintillation timing characteristics of Lu{sub x}Gd{sub 2−x}SiO{sub 5}:Ce crystals are studied. • Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce exhibits excellent light yield and timing response. • Energy resolution of 6% @662 keV is obtained for Lu{sub 0.8}Gd{sub 1.2}SiO{sub 5}:Ce. • Coincidence time resolution of 368 ps is obtained for Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce.

Growth and anisotropic spectral properties of Er:YAlO{sub 3} crystal

Energy Technology Data Exchange (ETDEWEB)

Dong Qin [Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Jiading, Shanghai 201800 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Zhao Guangjun, E-mail: zhaoguangjun@163.ne [Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Jiading, Shanghai 201800 (China); Cao Dunhua; Chen Jianyu; Ding Yuchong [Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Jiading, Shanghai 201800 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)

2010-03-18

A high quality Er{sup 3+}-doped YAlO{sub 3} single crystal has been successfully grown with the Czochralski method by a radio-frequency heating system. The polarized absorption and polarized fluorescence spectra are measured at room temperature. The effective phenomenological intensity parameters are obtained by analysis of the polarized absorption spectra with Judd-Ofelt (J-O) theory, and the results are: {Omega}{sub 2,eff}=2.83x10{sup -20}cm{sup 2},{Omega}{sub 4,eff}=1.39x10{sup -20}cm{sup 2},and{Omega}{sub 6,eff}=1.29x10{sup -20}cm{sup 2}. The spontaneous emission probabilities, fluorescence branching ratio and radiative lifetime of Er{sup 3+} ions in YAP crystal are calculated with the obtained parameters. The polarized emission cross-sections of the {sup 4}I{sub 13/2}{yields}{sup 4}I{sub 15/2} transition are calculated by both the Fuchtbauer-Ladenburg formula and the reciprocity method, and the results are compared.

Identification of Λ-like systems in Er3+:Y2SiO5 and observation of electromagnetically induced transparency

International Nuclear Information System (INIS)

Baldit, E.; Bencheikh, K.; Monnier, P.; Briaudeau, S.; Levenson, J. A.; Crozatier, V.; Lorgere, I.; Bretenaker, F.; Le Goueet, J. L.; Guillot-Noeel, O.; Goldner, Ph.

2010-01-01

Electromagnetically induced transparency (EIT) is reported in a solid-state material doped with erbium ions. In this paper we introduce the spectroscopic investigations we have conducted in order to identify the adequate Λ-like three-level systems in Er 3+ :Y 2 SiO 5 crystal, relevant for the demonstration of EIT. These results pave the way for nonlinear and quantum optics applications based on EIT at the telecom wavelength around 1.5 μm.

Magnetic structure of URhSi single crystal

Czech Academy of Sciences Publication Activity Database

Prokeš, K.; Andreev, Alexander V.; Honda, F.; Sechovský, V.

2003-01-01

Roč. 261, - (2003), s. 131-138 ISSN 0304-8853 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : URhSi single crystal * magnetization * neutron diffraction * magnetic structure determination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2003

Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

International Nuclear Information System (INIS)

Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

2015-01-01

Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

Energy Technology Data Exchange (ETDEWEB)

Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

2015-04-15

Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

Protection of p+-n-Si Photoanodes by Sputter-Deposited Ir/IrOxThin Films

DEFF Research Database (Denmark)

Mei, Bastian Timo; Seger, Brian; Pedersen, Thomas

2014-01-01

Sputter deposition of Ir/IrOx on p+-n-Si without interfacial corrosion protection layers yielded photoanodes capable of efficient water oxidation (OER) in acidic media (1 M H2SO4). Stability of at least 18 h was shown by chronoamperomety at 1.23 V versus RHE (reversible hydrogen electrode) under 38...... density of 1 mA/cm2 at 1.05 V vs. RHE. Further improvement by heat treatment resulted in a cathodic shift of 40 mV and enabled a current density of 10 mA/cm2 (requirements for a 10% efficient tandem device) at 1.12 V vs. RHS under irradiation. Thus, the simple IrOx/Ir/p+-n-Si structures not only provide...

Space growth studies of Ce-doped Bi12SiO20 single crystal

International Nuclear Information System (INIS)

Zhou, Y.F.; Wang, J.C.; Tang, L.A.; Pan, Z.L.; Chen, N.F.; Chen, W.C.; Huang, Y.Y.; He, W.

2004-01-01

Ce-doped Bi 12 SiO 20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one

A new 28Si single crystal: counting the atoms for the new kilogram definition

Science.gov (United States)

Bartl, G.; Becker, P.; Beckhoff, B.; Bettin, H.; Beyer, E.; Borys, M.; Busch, I.; Cibik, L.; D'Agostino, G.; Darlatt, E.; Di Luzio, M.; Fujii, K.; Fujimoto, H.; Fujita, K.; Kolbe, M.; Krumrey, M.; Kuramoto, N.; Massa, E.; Mecke, M.; Mizushima, S.; Müller, M.; Narukawa, T.; Nicolaus, A.; Pramann, A.; Rauch, D.; Rienitz, O.; Sasso, C. P.; Stopic, A.; Stosch, R.; Waseda, A.; Wundrack, S.; Zhang, L.; Zhang, X. W.

2017-10-01

A new single crystal from isotopically enriched silicon was used to determine the Avogadro constant N A by the x-ray-crystal density method. The new crystal, named Si28-23Pr11, has a higher enrichment than the former ‘AVO28’ crystal allowing a smaller uncertainty of the molar mass determination. Again, two 1 kg spheres were manufactured from this crystal. The crystal and the spheres were measured with improved and new methods. One sphere, Si28kg01a, was measured at NMIJ and PTB with very consistent results. The other sphere, Si28kg01b, was measured only at PTB and yielded nearly the same Avogadro constant value. The mean result for both 1 kg spheres is N A  =  6.022 140 526(70)  ×  1023 mol-1 with a relative standard uncertainty of 1.2  ×  10-8. This value deviates from the Avogadro value published in 2015 for the AVO28 crystal by about 3.9(2.1)  ×  10-8. Possible reasons for this difference are discussed and additional measurements are proposed.

Tracing crystal-field splittings in the rare-earth-based intermetallic CeIrIn5

Science.gov (United States)

Chen, Q. Y.; Wen, C. H. P.; Yao, Q.; Huang, K.; Ding, Z. F.; Shu, L.; Niu, X. H.; Zhang, Y.; Lai, X. C.; Huang, Y. B.; Zhang, G. B.; Kirchner, S.; Feng, D. L.

2018-02-01

Crystal electric field states in rare earth intermetallics show an intricate entanglement with the many-body physics that occurs in these systems and that is known to lead to a plethora of electronic phases. Here we attempt to trace different contributions to the crystal electric field (CEF) splittings in CeIrIn5, a heavy-fermion compound and member of the Ce M In5 (M = Co, Rh, Ir) family. To this end, we utilize high-resolution resonant angle-resolved photoemission spectroscopy (ARPES) and present a spectroscopic study of the electronic structure of this unconventional superconductor over a wide temperature range. As a result, we show how ARPES can be used in combination with thermodynamic measurements or neutron scattering to disentangle different contributions to the CEF splitting in rare earth intermetallics. We also find that the hybridization is stronger in CeIrIn5 than CeCoIn5 and the effects of the hybridization on the Fermi volume increase is much smaller than predicted. By providing experimental evidence for 4 f7/2 1 splittings which, in CeIrIn5, split the octet into four doublets, we clearly demonstrate the many-body origin of the so-called 4 f7/2 1 state.

Synthesis and structural characterization of Al4SiC4-homeotypic aluminum silicon oxycarbide, [Al4.4Si0.6][O1.0C2.0]C

International Nuclear Information System (INIS)

Kaga, Motoaki; Iwata, Tomoyuki; Nakano, Hiromi; Fukuda, Koichiro

2010-01-01

A new quaternary layered oxycarbide, [Al 4.39(5) Si 0.61(5) ] Σ5 [O 1.00(2) C 2.00(2) ] Σ3 C, has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound was found to be hexagonal with space group P6 3 /mmc, Z=2, and unit-cell dimensions a=0.32783(1) nm, c=2.16674(7) nm and V=0.20167(1) nm 3 . The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The maximum-entropy methods-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R wp =3.73% (S=1.20), R p =2.94%, R B =1.04% and R F =0.81%. The crystal was an inversion twin. Each twin-related individual was isostructural with Al 4 SiC 4 (space group P6 3 mc, Z=2). - Graphical abstract: A new oxycarbide discovered in the Al-Si-O-C system, Al 4 SiC 4 -homeotypic [Al 4.4 Si 0.6 ][O 1.0 C 2.0 ]C. The crystal is an inversion twin, and hence the structure is represented by a split-atom model. The three-dimensional electron density distributions are determined by the maximum-entropy methods-based pattern fitting, being consistent with the disordered structural model.

High-temperature crystal chemistry of layered calcium borosilicates: CaBSiO4(OH) (datolite), Ca4B5Si3O15(OH)5 (`bakerite') and Ca2B2SiO7 (synthetic analogue of okayamalite)

Science.gov (United States)

Krzhizhanovskaya, Maria G.; Gorelova, L. A.; Bubnova, R. S.; Pekov, I. V.; Krivovichev, S. V.

2018-05-01

The high-temperature behaviour of three Ca borosilicates has been studied by in situ powder high-temperature X-ray diffraction (HTXRD), differential scanning calorimetry and thermogravimetry in the temperature range 30-900 °C for natural samples of datolite, CaBSiO4(OH), and `bakerite', Ca4B5Si3O15(OH)5, and a synthetic analogue of okayamalite, Ca2B2SiO7. The latter was obtained by heating datolite at 800 °C for 5 h. Datolite and bakerite start to dehydroxylate above 700 and 500 °C, respectively, and decompose fully to form a high-temperature modification of okayamalite, HT-Ca2B2SiO7, and wollastonite, CaSiO3 at about 730 °C. Above 900 °C, HT-okayamalite decomposes with the formation of wollastonite, CaSiO3, and metaborate CaB2O4. The latter melts at about 990 °C. Above 1000 °C, only the existence of wollastonite, CaSiO3 and cristobalite, SiO2 was observed. According to the HTXRD data, in the temperature range 30-500 °C, datolite and `bakerite' demonstrate very similar and relatively low volumetric thermal expansion: α v = 29 and 27 × 10-6 °C-1, respectively. A high thermal expansion anisotropy ( α max/ α min 3) is caused by both the layered character of the crystal structures and the shear deformations of their monoclinic unit cells. The direction of maximum expansion is intermediate between the normal direction to the layers and the ( a + c) vector. A possible transformation mechanism from the datolite to the okayamalite structure topology is proposed from geometrical considerations. The synthetic analogue of okayamalite, Ca2B2SiO7, undergoes a reversible polymorphic transition at about 550 °C with a decrease in symmetry from tetragonal to orthorhombic. The crystal structure of the high-temperature (HT) modification of okayamalite was solved from the powder-diffraction data [900 °C: P21212, a = 7.3361(4), b = 7.1987(4), c = 4.8619(4) Å, V = 256.76(3) Å3, R wp = 6.61, R Bragg = 2.68%].

Synthesis of Bi4Si3O12 powders by a sol–gel method

International Nuclear Information System (INIS)

Xie Huidong; Jia Caixia; Jiang Yuanru; Wang Xiaochang

2012-01-01

Highlights: ► Bi 4 Si 3 O 12 were synthesized by a sol–gel method, using stoichiometric materials. ► The calcining process of the as-dried gel was studied by different analyses. ► Phase separation in the sol–gel process was found during the calcination. - Abstract: Micro-crystals of bismuth orthosilicate (Bi 4 Si 3 O 12 ) were synthesized by a sol–gel method, using stoichiometric Si(OC 2 H 5 ) 4 , Bi(NO 3 ) 3 ·5H 2 O as the precursors and acetic acid as the solvent. The calcining process of the as-dried gel was studied by total gravity/differential scanning calory (TG/DSC), X-ray diffraction (XRD) and infrared (IR) spectra. Experiments showed that single phase of Bi 4 Si 3 O 12 could be obtained by sol–gel method at a calcining temperature of 900 °C. Phase separation in the sol–gel process was found during the calcination.

Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped Lu2SiO5 crystal

International Nuclear Information System (INIS)

Li, D Z; Xu, X D; Zhou, D H; Xia, C T; Wu, F; Xu, J; Cong, Z H; Zhang, J; Tang, D Y

2011-01-01

High quality Nd 3+ -doped Lu 2 SiO 5 (Nd:LSO) crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:LSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω 2,4,6 were obtained to be 2.59, 4.90, and 5.96×10 -20 cm 2 , respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak emission cross section is 5.8 and 6.6×10 -20 cm 2 at 1075 and 1079 nm, respectively, with full width at half maximum (FWHM) of 2.8 and 5.1 nm in turn. Pumped by a laser diode, a maximum 2.54 W continuous-wave laser output has been obtained with a slope efficiency of 32%. All the results show that this crystal is a promising laser material

Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped Lu2SiO5 crystal

Science.gov (United States)

Li, D. Z.; Xu, X. D.; Zhou, D. H.; Xia, C. T.; Wu, F.; Xu, J.; Cong, Z. H.; Zhang, J.; Tang, D. Y.

2011-01-01

High quality Nd3+-doped Lu2SiO5 (Nd:LSO) crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:LSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω2,4,6 were obtained to be 2.59, 4.90, and 5.96×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak emission cross section is 5.8 and 6.6×10-20 cm2 at 1075 and 1079 nm, respectively, with full width at half maximum (FWHM) of 2.8 and 5.1 nm in turn. Pumped by a laser diode, a maximum 2.54 W continuous-wave laser output has been obtained with a slope efficiency of 32%. All the results show that this crystal is a promising laser material.

Magnetic ordering of YPd{sub 2}Si-type HoNi{sub 2}Si and ErNi{sub 2}Si compounds

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow, 119992 (Russian Federation); Isnard, O. [CNRS, Insitut. Néel, 25 Rue Des Martyrs BP166 x, F-38042 Grenoble (France); Université Grenoble Alpes, Inst. Néel, F-38042 Grenoble (France); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600 036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

2016-12-01

Magnetic properties of YPd{sub 2}Si-type HoNi{sub 2}Si and ErNi{sub 2}Si were investigated via neutron diffraction and magnetisation measurements. HoNi{sub 2}Si and ErNi{sub 2}Si show ferromagnetic-like ordering at T{sub C} of 9 K and 7 K, respectively. The paramagnetic Weiss temperatures are 9 K and 11 K and the effective magnetic moments are 10.76 μ{sub B}/fu and 9.79 μ{sub B}/fu for HoNi{sub 2}Si and ErNi{sub 2}Si compounds, respectively. The HoNi{sub 2}Si and ErNi{sub 2}Si are soft ferromagnets with saturation magnetization of 8.1 μ{sub B}/fu and 7.5 μ{sub B}/fu, respectively at 2 K and in field of 140 kOe. The isothermal magnetic entropy change, ΔS{sub m}, has a maximum value of −15.6 J/kg·K at 10 K for HoNi{sub 2}Si and −13.9 J/kg·K at 6 K for ErNi{sub 2}Si for a field change of 50 kOe. Neutron diffraction study in zero applied field shows mixed ferromagnetic-antiferromagnetic ordering of HoNi{sub 2}Si at ~9 K and its magnetic structure is a sum of a-axis ferromagnetic F{sub a}, b-axis antiferromagnetic AF{sub b} and c-axis antiferrromagnetic AF{sub c} components of Pn′a2{sub 1}′={1, m_x′/[1/2, 1/2, 1/2], 2_y′/[0, 1/2, 0], m_z/[1/2, 0, 1/2]} magnetic space group and propagation vector K{sub 0}=[0, 0, 0]. The holmium magnetic moment reaches a value of 9.23(9) μ{sub B} at 1.5 K and the unit cell of HoNi{sub 2}Si undergoes isotropic contraction around the temperature of magnetic transition. - Graphical abstract: HoNi{sub 2}Si: mixed ferro-antiferromagnet (F{sub a}+AF{sub b}+AF{sub c}){sup K0} with Pn′a2{sub 1}′ magnetic space group and K{sub 0}=[0, 0, 0] propagation vector below 10 K. - Highlights: • Ferro-antiferromagnetic ordering is observed in HoNi{sub 2}Si at 9 K and in ErNi{sub 2}Si at 7 K. • HoNi{sub 2}Si is soft ferromagnet with ΔS{sub m} of −15.6 J/kg·K at 10 K in field of 0–50 kOe. • ErNi{sub 2}Si is soft ferromagnet with ΔS{sub m} of −13.9 J/kg·K at 6 K in field of 0–50 kOe. • HoNi{sub 2}Si shows mixed F�

Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

Energy Technology Data Exchange (ETDEWEB)

Yao, Jinlei [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009 (China); Isnard, O. [Université Grenoble Alpes, Inst NEEL, BP166, Grenoble F-38042 (France); CNRS, Institut NEEL, 25 rue des martyrs, Grenoble F-38042 (France); Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Ivanova, T.I. [Physics Department, Moscow State University, Moscow 119992 (Russian Federation); Koshkid' ko, Yu.S. [International Laboratory of High Magnetic Fields and Low Temperatures, Wrocław (Poland); VSB-Technical University of Ostrava, Ostrava-Poruba 70833 (Czech Republic); Bogdanov, A.E.; Nikitin, S.A. [Physics Department, Moscow State University, Moscow 119992 (Russian Federation); Suski, W. [International Laboratory of High Magnetic Fields and Low Temperatures, Wrocław (Poland); Polish Academy of Sciences, Trzebiatowski Institute of Low Temperatures and Structure Research, P.O. Box 1410, 50-950 Wrocław 2 (Poland)

2015-02-15

Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space

Permeability and giant magnetoimpedance in Co69Fe4.5X1.5Si10B15 (X=Cr, Mn, Ni) amorphous ribbons

International Nuclear Information System (INIS)

Byon, Kwang Seok; Yu, Seong-Cho; Kim, Cheol Gi

2001-01-01

The magnetoimpedance (MI) has been measured in the amorphous ribbons of the soft ferromagnetic alloy Co 69 Fe 4.5 X 1.5 Si 10 B 15 (X=Cr, Mn, Ni) as functions of frequency (f). For all of the three samples, at low frequency, f≤5MHz, the MI ratio increases with increasing frequency, but the MI ratio decreases at high frequency, f≥5MHz. The MI profiles are not changed at low frequency regions of f≤1MHz in the amorphous ribbons. The MI ratio at high frequency of f=5MHz becomes 57% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 , but the MI ratio becomes 30% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 . The MI ratio at f=10MHz becomes 45% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 and the MI ratio becomes 23% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 , respectively. The maximum values of field sensitivity are 2.7(X=Cr), 2.5(X=Mn), 2.2(X=Ni)%/Oe for f=5MHz. [copyright] 2001 American Institute of Physics

New multicell model for describing the atomic structure of La{sub 3}Ga{sub 5}SiO{sub 14} piezoelectric crystal: Unit cells of different compositions in the same single crystal

Energy Technology Data Exchange (ETDEWEB)

Dudka, A. P., E-mail: dudka@ns.crys.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation)

2017-03-15

Accurate X-ray diffraction study of langasite (La{sub 3}Ga{sub 5}SiO{sub 14}) single crystal has been performed using the data obtained on a diffractometer equipped with a CCD area detector at 295 and 90.5 K. Within the known La{sub 3}Ga{sub 5}SiO{sub 14} model, Ga and Si cations jointly occupy the 2d site. A new model of a “multicell” consisting of two different unit cells is proposed. Gallium atoms occupy the 2d site in one of these cells, and silicon atoms occupy this site in the other cell; all other atoms correspondingly coordinate these cations. This structure implements various physical properties exhibited by langasite family crystals. The conclusions are based on processing four data sets obtained with a high resolution (sin θ/λ ≤ 1.35 Å{sup –1}), the results reproduced in repeated experiments, and the high relative precision of the study (sp. gr. P321, Z = 1; at 295 K, a = 8.1652(6) Å, c = 5.0958(5) Å, R/wR = 0.68/0.68%, 3927 independent reflections; at 90.5 K, a = 8.1559(4) Å, c = 5.0913(6) Å, R/wR = 0.92/0.93%, 3928 reflections).

Growth and characterization of Nd:Bi12SiO20 single crystal

Science.gov (United States)

Xu, Honghao; Zhang, Yuanyuan; Zhang, Huaijin; Yu, Haohai; Pan, Zhongben; Wang, Yicheng; Sun, Shangqian; Wang, Jiyang; Boughton, R. I.

2012-09-01

A Nd:Bi12SiO20 crystal was grown by the Czochralski method. The thermal properties of the crystal were systematically studied. The thermal expansion coefficient was measured to be α=11.42×10-6 K-1 over the temperature range of 295-775 K, and the specific heat and thermal diffusion coefficient were measured to be 0.243 Jg-1 k-1 and 0.584 mm2/s, respectively at 302 K. The density was measured to be 9.361 g/cm3 by the buoyancy method. The thermal conductivity of Nd:Bi12SiO20 was calculated to be 1.328 Wm-1 K-1 at room temperature (302 K). The refractive index of Nd:Bi12SiO20 was measured at room temperature at eight different wavelengths. The absorption and emission spectra were also measured at room temperature. Continuous-wave (CW) laser output of a Nd:Bi12SiO20 crystal pumped by a laser diode (LD) at 1071.5 nm was achieved with an output power of 65 mW. To our knowledge, this is the first time LD pumped laser output in this crystal has been obtained. These results show that Nd:Bi12SiO20 can serve as a laser crystal.

A single crystal study of RE{sub 14}Co{sub 3}In{sub 3} (RE = Y, Tb, Dy, Ho, Er)

Energy Technology Data Exchange (ETDEWEB)

Zaremba, V.I.; Kalychak, Y.M.; Dzevenko, M.V. [Inorganic Chemistry Dept., Ivan Franko National Univ. of Lviv (Ukraine); Rodewald, U.Ch.; Heying, B.; Poettgen, R. [Inst. fuer Anorganische und Analytische Chemie, Westfaelische Wilhelms-Univ. Muenster (Germany)

2006-01-01

The rare earth-cobalt-indides RE{sub 14}Co{sub 3}In{sub 3} (RE = Y, Tb, Dy, Ho, Er) were prepared in polycrystalline form from the elements by arc-melting. Small single crystals were grown through a special annealing sequence. The compounds were investigated on the basis of X-ray powder and single crystal data: Lu{sub 14}Co{sub 2}In{sub 3} (Gd{sub 14}Co{sub 3}In{sub 2.7}) type, P4{sub 2}/nmc, Z = 4, a = 959.0(1), c = 2319.1(5) pm, wR2 = 0.055, 2289 F{sup 2} values, 65 variables for Y{sub 13.90}Co{sub 2.99}In{sub 3.02}, a = 953.8(1), c = 2315.8(5) pm, wR2 = 0.108, 2357 F{sup 2} values, 65 variables for Tb{sub 13.92}Co{sub 3.01}In{sub 2.92}, a = 949.24(3), c = 2296.5(1) pm, wR2 = 0.129, 2518 F{sup 2} values, 65 variables for Dy{sub 13.90}Co{sub 2.97}In{sub 2.95}, a = 946.3(1), c = 2289.0(5) pm, wR2 = 0.099, 2297 F{sup 2} values, 64 variables for Ho{sub 14}Co{sub 2.80}In{sub 2.89}, and a = 941.0(1), c = 2274.2(5) pm, wR2 = 0.140, 2450 F{sup 2} values, 65 variables for Er{sub 13.83}Co{sub 2.88}In{sub 3.10}. All RE{sub 14}Co{sub 3}In{sub 3} indides show a small degree of In/Co mixing (between 7 and 16% Co) on the 4c In1 site and defects on the 8g Co1 positions (between 84 and 95% Co). Except for the holmium compound, the RE{sub 14}Co{sub 3}In{sub 3} intermetallics also reveal RE/In mixing on the 4c RE1 sites, leading to the refined compositions. The seven crystallographically independent RE sites have between 9 and 10 nearest RE neighbors. The RE{sub 14}Co{sub 3}In{sub 3} structures consist of a complex intergrowth of rare earth based polyhedra. Both cobalt sites have a distorted trigonal-prismatic rare earth coordination. An interesting feature is the In2-In2 dumb-bell with an In2-In2 distance of 300 pm (for Ho{sub 14}Co{sub 2.80}In{sub 2.89}). The crystal chemistry of the RE{sub 14}Co{sub 3}In{sub 3} indides is discussed. (orig.)

A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro’s constant

Science.gov (United States)

Abrosimov, N. V.; Aref'ev, D. G.; Becker, P.; Bettin, H.; Bulanov, A. D.; Churbanov, M. F.; Filimonov, S. V.; Gavva, V. A.; Godisov, O. N.; Gusev, A. V.; Kotereva, T. V.; Nietzold, D.; Peters, M.; Potapov, A. M.; Pohl, H.-J.; Pramann, A.; Riemann, H.; Scheel, P.-T.; Stosch, R.; Wundrack, S.; Zakel, S.

2017-08-01

A metrological challenge is currently underway to replace the present definition of the kilogram. One prerequisite for this is that the Avogadro constant, N A, which defines the number of atoms in a mole, needs to be determined with a relative uncertainty of better than 2  ×  10-8. The method applied in this case is based on the x-ray crystal density experiment using silicon crystals. The first attempt, in which silicon of natural isotopic composition was used, failed. The solution chosen subsequently was the usage of silicon highly enriched in 28Si from Russia. First, this paper reviews previous efforts from the very first beginnings to an international collaboration with the goal of producing a 28Si single crystal with a mass of 5 kg, an enrichment greater than 0.9999 and of sufficient chemical purity. Then the paper describes the activities of a follow-up project, conducted by PTB, to produce a new generation of highly enriched silicon in order to demonstrate the quasi-industrial and reliable production of more than 12 kg of the 28Si material with enrichments of five nines. The intention of this project is also to show the availability of 28Si single crystals as a guarantee for the future realisation of the redefined kilogram.

Yb5Ni4Sn10 and Yb7Ni4Sn13: New polar intermetallics with 3D framework structures

International Nuclear Information System (INIS)

Lei Xiaowu; Sun Zhongming; Li Longhua; Zhong Guohua; Hu Chunli; Mao Jianggao

2010-01-01

The title compounds have been obtained by solid state reactions of the corresponding pure elements at high temperature, and structurally characterized by single-crystal X-ray diffraction studies. Yb 5 Ni 4 Sn 10 adopts the Sc 5 Co 4 Si 10 structure type and crystallizes in the tetragonal space group P4/mbm (No. 127) with cell parameters of a=13.785(4) A, c=4.492 (2) A, V=853.7(5) A 3 , and Z=2. Yb 7 Ni 4 Sn 13 is isostructural with Yb 7 Co 4 InGe 12 and crystallizes in the tetragonal space group P4/m (No. 83) with cell parameters of a=11.1429(6) A, c=4.5318(4) A, V=562.69(7) A 3 , and Z=1. Both structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are occupied by the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic. These results are in agreement with those from temperature-dependent resistivity and magnetic susceptibility measurements. - Graphical abstract: Two new ytterbium nickel stannides, namely, Yb 5 Ni 4 Sn 10 and Yb 7 Ni 4 Sn 13 , have been synthesized and structurally characterized by single-crystal X-ray diffraction studies. Both their structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are situated by all the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic, which are in accordance with the results from temperature-dependent resistivity and magnetic susceptibility measurements.

Growth of Ba-hexaferrite films on single crystal 6-H SiC

International Nuclear Information System (INIS)

Chen Zhoahui; Yang, Aria; Yoon, S.D.; Ziemer, Katherine; Vittoria, Carmine; Harris, V.G.

2006-01-01

Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ-2θ diffraction measurements indicate a strong (0,0,2n) alignment of crystallites. The magnetization for low-pressure deposition (20mTorr) is comparable to bulk values (4πM s ∼4320G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits. c integrated circuits

Synthesis, characterization and single crystal x-ray analysis of a complex of iron(II) bis(2,4-dimethylphenyl)dithiophosphate with 4-ethylpyridine

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sandeep; Andotra, Savit; Kaur, Mandeep [University of Jammu, Department of Chemistry (India); Gupta, Vivek K.; Kant, Rajni [Department of Physics and Electronics, University of Jammu, X-ray Crystallographic Laboratory (India); Pandey, Sushil K., E-mail: kpsushil@rediffmail.com [University of Jammu, Department of Chemistry (India)

2016-09-15

Complex of iron(II) bis(2,4-dimethylphenyl)dithiophosphate with 4-ethylpyridine [((2,4- (CH{sub 3}){sub 2}C{sub 6}H{sub 3}O)2PS2)2Fe(NC{sub 5}H{sub 4}(C{sub 2}H{sub 5})-4){sub 2}] is synthesized and characterized by elemental analysis, magnetic moment, IR spectroscopy and single crystal X-ray analysis. Complex crystallizes in the monoclinic sp. gr. P2{sub 1}/n, Z = 2. Crystal structure consists of mononuclear units with Fe(II) ion chelated by four S atoms of the two diphenyldithiophosphate ligands in bidentate manner. N atoms from two 4-ethylpyridine ligands are axially coordinated to the Fe(II) atom leading to an octahedral geometry.

Magnetic SiO2/Fe3O4 colloidal crystals

International Nuclear Information System (INIS)

Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

2008-01-01

We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field

Analgesic Efficacy of a New Immediate-Release/Extended-Release Formulation of Ibuprofen: Results From Single- and Multiple-Dose Postsurgical Dental Pain Studies.

Science.gov (United States)

Christensen, Steven; Paluch, Ed; Jayawardena, Shyamalie; Daniels, Stephen; Meeves, Suzanne

2017-05-01

Analgesic effects of ibuprofen immediate-release/extended-release (IR/ER) 600-mg tablets were evaluated in 2 randomized, double-blind, placebo-controlled dental pain studies. Patients 16-40 years old with moderate-severe pain following third-molar extraction received single-dose ibuprofen 600 mg IR/ER (formulation A or B), naproxen sodium 220 mg, or placebo (2:2:2:1; study 1) or 4 doses of ibuprofen 600 mg IR/ER (formulation A) or placebo (1:1; study 2). In study 1 (n = 196), mean (standard deviation [SD]) time-weighted sum of pain intensity difference scores for placebo, ibuprofen IR/ER A, ibuprofen IR/ER B, and naproxen, respectively, were 0.05 (9.2), 16.87 (9.4), 17.34 (10.5), and 12.66 (10.0) over 0-12 hours and -0.03 (4.1), 6.57 (4.4), 7.14 (5.2), and 5.14 (5.0) over 8-12 hours (all P ibuprofen IR/ER, respectively (P ibuprofen. Gastrointestinal adverse events predominated with placebo both after study medication administration and after rescue medication use, if applicable. Ibuprofen 600 mg IR/ER provided safe and effective analgesia after single and multiple doses. © 2016, The American College of Clinical Pharmacology.

High-pressure synthesis and crystal structure of In{sub 3}B{sub 5}O{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Vitzthum, Daniela; Schauperl, Michael; Liedl, Klaus R.; Huppertz, Hubert [Univ. Innsbruck (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie

2017-03-01

Orthorhombic In{sub 3}B{sub 5}O{sub 12} was synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 12.2 GPa and 1500 C. Its structure is isotypic to the rare earth analogs RE{sub 3}B{sub 5}O{sub 12} (RE=Sc, Er-Lu). In the field of indium borate chemistry, In{sub 3}B{sub 5}O{sub 12} is the third known ternary indium borate besides InBO{sub 3} and InB{sub 5}O{sub 9}. The crystal structure of In{sub 3}B{sub 5}O{sub 12} has been determined via single-crystal X-ray diffraction data collected at room temperature. It crystallizes in the orthorhombic space group Pmna with the lattice parameters a=12.570(2), b=4.5141(4), c=12.397(2) Aa, and V=703.4(2) Aa{sup 3}. IR and Raman bands of In{sub 3}B{sub 5}O{sub 12} were theoretically determined and assigned to experimentally recorded spectra.

Properties of laser-crystallized polycrystalline SiGe thin films

Energy Technology Data Exchange (ETDEWEB)

Weizman, Moshe

2008-06-06

In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0crystallization of amorphous Si{sub 1-x}Ge{sub x} thin films with 0.3SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 04 x 10{sup 18} cm{sup -3}, which is roughly independent of the crystallization method and Ge content. The defect density for solid-phase crystallized SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

Optical study on neutron irradiation effect on hexagonal SiC single crystal

Energy Technology Data Exchange (ETDEWEB)

Okada, Moritami; Kimura, Itsurou; Kanazawa, Satoshi; Kanno, Ikuo; Kamiya, Koji [Kyoto Univ. (Japan); Nakata, Toshitake; Watanabe, Masanori; Nakagawa, Masuo; Atobe, Kozo

1996-04-01

It is well known that SiC is a higher radiation resistant semiconductor on comparison with Si and Ge. Recently, on accompanying with advancement of developing program on nuclear fission reactor on space, development of electronic element workable effectively under severe radiation environment is desired. SiC is expected as one of such elements. Therefore, because of considering importance of understanding the effect on fundamental properties of SiC electronic element under radiation environment before its development, some studies on it was executed. In this paper, according to find out induction of interesting defect center in hexagonal 4H- and 6H-SiC single crystals irradiated with reactor neutron on light absorption and SER test, outlines of these experimental results were reported. (G.K.)

Ternary phosphates in Ca3(PO4)2-Na3Ln(PO4)2 (Ln-Nd, Eu, Er) systems

International Nuclear Information System (INIS)

Lazoryak, B.I.; Ivanov, L.N.; Strunenkova, T.V.; Golubev, V.N.; Viting, B.N.

1990-01-01

Ternary phosphates, formed in Ca 3 (PO 4 ) 2 -Na 3 Ln(PO 4 ) 2 (Ln-Nd, Eu, Er) systems were investigated by the methods of X-ray phase, luminescent analyses and IR spectroscopy. 5 regions of homogeneity were found. Two of them (I and II) were distinguished for all systems. Samples in the region of up to 14.285 mol.% Na 3 Ln(PO 4 ) 2 crystallize on the basis of β-Ca 3 (PO 4 ) 2 structure, and in other homogeneity regions - on the basis of β-K 2 SO 4 structure

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

We review the observation of novel charge density wave (CDW) transitions in ternary R5Ir4Si10 compounds. A high quality single crystal of Lu5Ir4Si10 shows the formation of a commensurate CDW along -axis below 80 K in the (ℎ, 0, ) plane that coexists with BCS type superconductivity below 3.9 K. However, in a single ...

The measurement of Ksub(IC) in single crystal SiC using the indentation method

International Nuclear Information System (INIS)

Henshall, J.L.; Brookes, C.A.

1985-01-01

The present work has concentrated on investigating the underlying fracture toughness behaviour of SiC single crystals. This material was chosen because of the commercial importance of the various polycrystalline forms of SiC and the relative ready availability of reasonably sized single crystals. This study has examined the feasibility of using the indentation technique to determine Ksub(IC) in SiC single crystals. This requires much more less complex experimentation and also affords the possibility of being able to use this method to study the orientation dependence of Ksub(IC) in a similar manner to that used to investigate anisotropy in indentation hardness behaviour. A single crystal of 6H-SiC was used for all the hardness and conventional Ksub(IC) results reported here. The particular polytype and orientation were determined using the Laue X-ray method. All the measurements were made under ambient conditions. Three-point bend tests, with a 6 mm span on single edge notched beams, SENB, orientated such that the plane of the notch was brace 112-bar0 brace and the crack propagation direction were used for the conventional Ksub(IC) tests. The hardness indentations were all made on one particular SENB test piece after it had been fractured. The results are discussed. (author)

Utilization of Snail (Achatina fulica Shell Waste for Synthesis of Calcium Tartrate Tetrahydrate (CaC4H4O6.4H2O Single Crystals in Silica Gel

Directory of Open Access Journals (Sweden)

Imam Sakdi

2012-01-01

Full Text Available Snail (Achatina fulica shell waste is massively produced by many home industries in Indonesia, especially in East Java. The snail shell is known for high calcium; therefore it is potential to be used as calcium source of supernatant in the synthesis of piezoeletric material, such as single crystal of calcium tartrate tetrahydrate (CaTT. The aim of this research is to study the synthesis and characterization of CaTT or CaC4H4O6.4H2O from snail shell waste in silica gel. Supernatant solution of CaCl2 was prepared from CaO, which previously made by calcinating the shell at 1000°C, and then reacted with HCl 1,5M. Synthesis of CaTT was conducted in a single-tube reaction at room temperature in which silica gel was used as growth medium with gelling time of 10 days and growth time of 2 weeks. The pH of gel and CaCl2 concentration were varied, 3.00; 3.50; 4.00; 4.50; 5.00; and 0.27; 0.36; 0.45; 0.54 M respectively, in order to obtain optimum condition of the synthesis, which is indicated from crystal yields. The synthesized crystals were characterized by atomic adsorption spectrophotometry (AAS, infrared spectroscopy (IR and powder X-ray diffraction (XRD. Experimental data shows that optimum condition was obtained at pH of 3.50 and [CaCl2] of 0.45M with yield of 69.37%. The obtained single crystal has clear color and octahedral-like shape with size ranged between 4 – 9 mm. Analysis data by FTIR and powder XRD confirmed that the obtained crystal was CaTT single crystals with crystal system of orthorhombic.

Luminescent and laser properties of Yb Er:GdCa4O(BO3)3: a new crystal for eye-safe 1.5-μm lasers

Science.gov (United States)

Denker, B.; Galagan, B.; Ivleva, L.; Osiko, V.; Sverchkov, S.; Voronina, I.; Hellstrom, J. E.; Karlsson, G.; Laurell, F.

2004-09-01

We present for the first time 1.5-μm laser emission in Yb Er:GdCa4O(BO3)3 (GdCOB). The crystals were grown by the Czochralski method from platinum crucibles. Spectroscopic and laser tests of the crystals are described. A continuous-wave output power of 80 mW was achieved in a monolithic microchip cavity under laser-diode pumping.

Single crystal structures of the new vanadates CuMgVO{sub 4} and AgMgVO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Ben Yahia, Hamdi, E-mail: Hyahia@qf.org.qa [Research Institute of Electrochemical Energy, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, PO Box 5825, Doha (Qatar); Shikano, Masahiro, E-mail: shikano.masahiro@aist.go.jp [Research Institute of Electrochemical Energy, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Essehli, Rachid; Belharouak, Ilias [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, PO Box 5825, Doha (Qatar)

2016-08-01

The new compounds CuMgVO{sub 4} and AgMgVO{sub 4} have been synthesized by a solid state reaction route. Their crystal structures were determined from single-crystal X-ray diffraction data. CuMgVO{sub 4} crystallizes with Na{sub 2}CrO{sub 4}-type structure with space group Cmcm, a = 5.6932 (10), b = 8.7055 (15), c = 6.2789 (10) Å, V = 311.20 (9) Å{sup 3}, and Z = 4, whereas AgMgVO{sub 4} crystallizes in the maricite-type structure with space group Pnma, a = 9.4286 (14), b = 6.7465 (10), c = 5.3360 (8) Å, V = 339.42 (9) Å{sup 3}, and Z = 4. Both structures of CuMgVO{sub 4}, and AgMgVO{sub 4} contain MgO{sub 4} chains made up of edge-sharing MgO{sub 6} octahedra. In CuMgVO{sub 4} the MgO{sub 4} chains are interconnected through CuVO{sub 4} double chains made up of VO{sub 4} and CuO{sub 4} tetrahedra sharing corners and edges, however in AgMgVO{sub 4} the chains are interlinked by the VO{sub 4} and AgO{sub 4} tetrahedra sharing only corners. - Highlights: • We have been able to grow CuMgVO{sub 4} and AgMgVO{sub 4} single crystals. • We solved their crystal structures using single crystal data. • We compared the crystal structures of CuMgVO{sub 4} and AgMgVO{sub 4}.

Synthesis, crystal structure, growth, optical and third order nonlinear optical studies of 8HQ2C5N single crystal - An efficient third-order nonlinear optical material

Energy Technology Data Exchange (ETDEWEB)

Divya Bharathi, M.; Ahila, G.; Mohana, J. [Department of Physics, Presidency College, Chennai 600005 (India); Chakkaravarthi, G. [Department of Physics, CPCL Polytechnic College, Chennai 600068 (India); Anbalagan, G., E-mail: anbu24663@yahoo.co.in [Department of Nuclear Physics, University of Madras, Chennai 600025 (India)

2017-05-01

A neoteric organic third order nonlinear optical material 8-hydroxyquinolinium 2-chloro-5-nitrobenzoate dihydrate (8HQ2C5N) was grown by slow cooling technique using ethanol: water (1:1) mixed solvent. The calculated low value of average etch pit solidity (4.12 × 10{sup 3} cm{sup −2}) indicated that the title crystal contain less defects. From the single crystal X-ray diffraction data, it was endowed that 8HQ2C5N crystal belongs to the monoclinic system with centrosymmetric space group P2{sub 1}/c and the cell parameters values, a = 9.6546 (4) Ǻ, b = 7.1637(3) Ǻ, c = 24.3606 (12) Ǻ, α = γ = 90°, β = 92.458(2)° and volume = 1683.29(13) Ǻ{sup 3}. The FT-IR and FT-Raman spectrum were used to affirm the functional group of the title compound. The chemical structure of 8HQ2C5N was scrutinized by {sup 13}C and {sup 1}H NMR spectral analysis and thermal stability through the differential scanning calorimetry study. Using optical studies the lower cut-off wavelength and optical band gap of 8HQ2C5N were found to be 364 nm and 3.17 eV respectively. Using the single oscillator model suggested by Wemple – Didomenico, the oscillator energy (E{sub o}), the dispersion energy (E{sub d}) and static dielectric constant (ε{sub o}) were estimated. The third-order susceptibility were determined as Im χ{sup (3)} = 2.51 × 10{sup −5} esu and Re χ{sup (3)} = 4.46 × 10{sup −7} esu. The theoretical third-order nonlinear optical susceptibility χ{sup (3)} was calculated and the results were compared with experimental value. Photoluminescence spectrum of 8HQ2C5N crystal showed the yellow emission. The crystal had the single shot laser damage threshold of 5.562 GW/cm{sup 2}. Microhardness measurement showed that 8HQ2C5N belongs to a soft material category. - Highlights: • A new organic single crystals were grown and the crystal structure was reported. • Crystal possess, good transmittance, thermal and mechanical stability. • Single shot LDT value is found to be

Er{sub 1.33}Pt{sub 3}Ga{sub 8}: A modulated variant of the Er{sub 4}Pt{sub 9}Al{sub 24}-structure type

Energy Technology Data Exchange (ETDEWEB)

Oswald, Iain W.H. [Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); Gourdon, Olivier [Research and Development, ZS Pharma, Coppell, TX 75109 (United States); Bekins, Amy; Evans, Jess [Department of Chemistry and Biochemistry, University of Texas at Arlington, Arlington, TX 76019 (United States); Treadwell, LaRico J. [Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); Chan, Julia Y., E-mail: Julia.Chan@utdallas.edu [Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); Macaluso, Robin T., E-mail: robin.macaluso@uta.edu [Department of Chemistry and Biochemistry, University of Texas at Arlington, Arlington, TX 76019 (United States); Department of Chemistry and Biochemistry, University of Northern Colorado, Greeley, CO 80639 (United States)

2016-10-15

Single crystals of Er{sub 1.33}Pt{sub 3}Ga{sub 8} were synthesized in a molten Ga flux. Er{sub 1.33}Pt{sub 3}Ga{sub 8} can be considered to be a modulated variant of the Er{sub 4}Pt{sub 9}Al{sub 24}-structure type, where the partial occupancies are ordered. Indeed, the presence of weak satellite reflections indicates a complex organization and distribution of the Er and Ga atoms within the [ErGa] slabs. The structure has been solved based on single crystal X-ray diffraction data in the monoclinic superspace group X2/m(0β0)00 with a commensurate modulated vector q=1/3b*. Precession images also indicate diffusion in the perpendicular direction indicating a partial disorder of this arrangement from layer to layer. In addition, Er{sub 1.33}Pt{sub 3}Ga{sub 8} shows antiferromagnetic ordering at T{sub N}~5 K. - Graphical abstract: A precession image of the hk0 zone showing weak, periodic, unindexed reflections indicating modulation and representation of the commensurate [ErGa] layer showing the waving modulated occupation. - Highlights: • Single crystals of Er{sub 1.33}Pt{sub 3}Ga{sub 8} were grown from gallium flux. • The structure of Er{sub 1.33}Pt{sub 3}Ga{sub 8} is compared to Er{sub 4}Pt{sub 9}Al{sub 24}. • Structure has been solved in the monoclinic superspace group X2/m(0β0)00 with a commensurate modulated vector q=1/3b*.

Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

Science.gov (United States)

Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-01-08

A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

Scintillation characteristics of LiB3O5 and β-BaB2O4 single crystals

International Nuclear Information System (INIS)

Nazarenko, B.P.; Pedash, V.Yu.; Shekhovtsov, A.N.; Tarasov, V.A.; Zelenskaya, O.V.

2006-01-01

LiB 3 O 5 and β-BaB 2 O 4 single crystals have been grown by the top seeded solution growth technique. The optical characteristics and scintillation parameters of the grown single crystals have been tested and discussed

Laser-induced, Er3+ trace-sensitized red-to-blue photon avalanche up-conversion in Tm3+-doped LiKYF5 crystals

International Nuclear Information System (INIS)

Jouart, J P; Bouffard, M; Boulma, E; Diaf, M; Vojtenko, E N; Khaidukov, N M

2005-01-01

The results for a spectroscopic study demonstrating that the excited-state absorption(ESA) of Tm 3+ :LiKYF 5 at 648nm is dependent on the purity of starting materials used for synthesizing the crystal are presented. The Er 3+ -free LiKYF 5 crystal doped with Tm 3+ is transparent at 648 nm because the majority of the Tm 3+ ions are in the ground 3 H 6 state whatever the selective excitation intensity, whereas the Er 3+ -contaminated crystal is semi-transparent. In the second case a small increase of the excitation intensity above a certain threshold produces an abrupt enhancement of the ESA process at 648 nm as well as the blue and the green emissions that are detected. All three processes, namely ESA corresponding to the 3 F 4 (2) → 1 G 4 (2) Tm 3+ transition, the blue emission due to the 1 G 4 → 3 H 6 Tm 3+ transition and the green emission from the 4 S 3/2 Er 3+ level, are sensitized with the Tm 3+ → Er 3+ → Tm 3+ energy transfers which promote the conversion of Tm 3+ ions from the 1 G 4 and the 3 H 4 states to the metastable 3 F 4 state

Single crystal growth and low-temperature properties of Er{sub 3}Al{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Suttner, Christian; Benka, Georg; Bauer, Andreas; Pfleiderer, Christian [Physik Department, Technische Universitaet Muenchen, D-85748 Garching (Germany)

2016-07-01

In recent years, topologically non-trivial spin whirls in condensed matter systems attracted great scientific interest. Lattices of these objects, so-called magnetic skyrmion lattices, were mainly observed in Dzyaloshinskii-Moriya driven chiral magnets with the non-centrosymmetric cubic space group P2{sub 1}3. Similar spin textures, however, may in principle also arise in a large number of further compounds. We report single-crystal growth of Er{sub 3}Al{sub 2} crystallizing in the tetragonal space group P4{sub 2}/mnm by means of optical float zoning under UHV-compatible conditions. We determined the magnetic phase diagram for fields applied along different crystallographic directions using magnetization, ac susceptibility, and specific heat measurements. Several phase pockets are observed below the Neel temperature T{sub N} = 27 K, consistent with earlier reports.

Diamond turning of Si and Ge single crystals

Energy Technology Data Exchange (ETDEWEB)

Blake, P.; Scattergood, R.O.

1988-12-01

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Electrical transport of bottom-up grown single-crystal Si1-xGex nanowire

International Nuclear Information System (INIS)

Yang, W F; Lee, S J; Liang, G C; Whang, S J; Kwong, D L

2008-01-01

In this work, we fabricated an Si 1-x Ge x nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si 1-x Ge x NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-x Ge x NWs. It is found that both undoped and phosphorus-doped Si 1-x Ge x NW MOSFETs exhibit p-MOS operation while enhanced performance of higher I on ∼100 nA and I on /I off ∼10 5 are achieved from phosphorus-doped Si 1-x Ge x NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec -1 was obtained by reducing HfO 2 gate dielectric thickness. A comprehensive study on SBH between the Si 1-x Ge x NW channel and Pd source/drain shows that a doped Si 1-x Ge x NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH

Monte-Carlo-calculations for the simulation of channelling-experiments with V3Si-single-crystals

International Nuclear Information System (INIS)

Kaufmann, R.

1978-05-01

The results of channelling-investigations on single-crystals of A15-type structure, like e.g. V 3 Si, are not directly comparable to analytical model-calculations. Therefore the channelling-process was simulated in a Monte-Carlo-program on the basis of the binary-collision-model. The calculated values for the minimum yield, Chisub(min), and the critical angle, Psisub(1/2), were in good agreement with the results of experiments with 2 MeV- 4 He + -particles. The lattice damage in the range of 2,000 Angstroem at the surface after an irradiation with a fluence of 6 x 10 16 - 4 He + /cm 2 at 300 KeV could be explained by normally distributed static displacements of the V-atoms with a mean value of 0.05 A. The transverse damage structure after an irradiation with a fluence of 1.5 x 10 16 - 4 He + /cm 2 at 50 KeV could be simulated by a step profile of 50% displacements of the V-atoms with a maximum value of 0.5 Angstroem at the depth of the projected range. (orig./HPOE) [de

Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

International Nuclear Information System (INIS)

Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

2010-01-01

The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

Crystal structure of 4-RbHo(PO3)4, 4-RbTm(PO3)4 and 4-CsEr(PO3)4

International Nuclear Information System (INIS)

Maksimova, S.I.; Palkina, K.K.; Chibiskova, N.T.

1982-01-01

X-ray structural study of 4-RbLn(PO 3 ) 4 (Ln=Mo, Tm) and 4-CsEr(PO 3 ) 4 is carried out. The compounds are crystallized in monoclinic crystal system, sp. gr P2 1 /n. Parameters of their unit cell, atom coordinates, anisotropic heat parameters, interatomic distances and valent angles are given. 4-RbHo(PO 3 ) 4 , 4-RbTm(PO 3 ) 4 , 4-CsEr(PO 3 ) 4 are isostructural to previously studied TlNd(PO 3 ) and 4-RbNd(PO 3 ) 4 . Using as an example the structural type 4-M 1 Ln(PO 3 ) 4 it is shown that the change of the shortest distances Ln-Ln, M 1 -M 1 and M 1 -Ln, as well as of degree of polymorphous chain corrugation to a higher extent depends on rare earth atom dimensions, than on monovalent metal ion dimensions [ru

Crystal Structure and Hydrogen Bonding Study of (10E-2,2-Dimethyl-3,4-dihydro-2H-benzo[g]chromene-5,10-dione 10-Oxime Derived From a-Lapachone

Directory of Open Access Journals (Sweden)

Lorenzo C. Visentin

2011-01-01

Full Text Available The compound (10E-2,2-dimethyl-3,4-dihydro-2H-benzo[g]chromene-5,10-dione-10-oxime (1 was synthesized from a-lapachone and hydroxylamine chloride in alkaline medium. Single-crystals suitable for X-ray diffraction measurements were grown from an ethanol solution, and the crystal structure of the title molecule is reported for the first time. The title molecule was also characterized by 1H- and 13C-NMR in CDCl3 solution, FTIR and MS. The crystal structure of 1 shows an E stereochemistry and dimers formed through classical hydrogen bonds.

Synthesis, Crystal Structural Characterization and Biological Properties of Thiosemicarbazones of Schiff Bases Derived from 4-Acyl-2-pyrazoline-5-one

Directory of Open Access Journals (Sweden)

Arjunsinh Rana

2011-01-01

Full Text Available A novel synthesis, single crystal and biological activity of 4-acylthiosemicarbazone-3-methyl-1-(4`-methylphenyl-2-pyrazolin-5-one by condensation of 4-acyl-3-methyl-1-(4`-methylphenyl-2-pyrazolin-5-one with thiosemicarbazide was carried out. The compounds were characterized on the basis of elemental analysis, IR, 1H NMR, Mass, DSC and 13C NMR spectral data. The compounds were tested for their antibacterial activity against various gram +ve and -ve bacteria. The results were compared with the marketed drugs. The crystal structure was determined by single x-ray diffraction. 4-Acetyl thiosemicarbazone-3-methyl-1-(4`-methylphenyl-2-pyrazolin-5-one(AcPTMP-ths crystallizes in the monoclinic system, space group P21/n with a=6.0828(7Å, b=29.547(4Å, c=7.9101(15Å, α=90°, γ=95.602(15°, γ=90°, V=1414.9(4 Å3, Z=4, Dc=1.429 mg/m3 and 4-Propionylthiosemicarbazone-3-methyl-1-(4`-methylphenyl-2-pyrazolin-5-one (PropPTMP-ths crystallizes in the monoclinic system, space group P21/c with a=13.5622(10Å, b=13.3671(12Å, c=22.151(2Å, α=90°, β=93.13(7°, γ=90°, V=4010.1(6 Å3, Z=8, Dc=1.310 mg/m3. The compounds were screened for antibacterial properties and exhibited potential activity.

Spatially selective Er/Yb-doped CaF2 crystal formation by CO2 laser exposure

International Nuclear Information System (INIS)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo

2014-01-01

Highlights: • Oxyfluoride glass–ceramics containing CaF 2 nanocrystals doped with Er 3+ and Yb 3+ ions were formed on the glass surface by CO 2 laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF 2 nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO 2 laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF 2 and miner Ca 2 SiO 4 nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment

Spatially selective Er/Yb-doped CaF2 crystal formation by CO2 laser exposure

International Nuclear Information System (INIS)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo

2015-01-01

Highlights: • Oxyfluoride glass–ceramics containing CaF 2 nanocrystals doped with Er 3+ and Yb 3+ ions were formed on the glass surface by CO 2 laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF 2 nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO 2 laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF 2 and miner Ca 2 SiO 4 nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment

Ion-beam-driven amorphization of Ca2La8(SiO4)6O2 single crystals

International Nuclear Information System (INIS)

Weber, W.J.; Hess, N.J.; Wang, L.M.

1993-11-01

Single crystals of Ca 2 La 8 (SiO 4 ) 6 O 2 , with 1% Nd substituted for La, were irradiated with 0.8 MeV Ne + and 1.5 MeV Kr + ions from 15 to 773 K. The irradiations were carried out using the HVEM-Tandem Facility at Argonne National Laboratory. The structural changes and the ion fluence for complete amorphization were determined by in situ transmission electron microscopy. The ion fluence for complete amorphization increased with temperature in two stages associated with defect annealing processes. The critical temperature for amorphization increased from ∼360 K for 0.8 MeV Ne + to ∼710 K for 1.5 MeV Kr + . During in situ annealing studies, irradiation-enhanced recrystallization was observed at 923 K. Spatially-resolved fluorescence spectra of the Nd ion excited with 488.0 mn laser excitation showed marked line-broadening toward the center of the amorphous regions. Initial measurements indicate the subtle shifts of the 9 I 9/2 groundstate energy levels can be measured by pumping directly into the excited state 4 F 3/2 manifold suggesting that the line broadening observed originates from a distribution of geometrically distorted Nd sites

Novel charge density wave transition in crystals of R5Ir4Si10

Indian Academy of Sciences (India)

rate state below 55 K. The positions of these super lattice reflections can be described by modulation wave vectors q1 =(0, 0, 1/4δ), q2 =(0, 0, 1/4+δ) and q3 ..... [18] H T Stokes and D M Hatch, Isotropy subgroups of the 230 crystallographic space groups (World. Scientific, Singapore, 1988). [19] Very recently dissimilarities ...

Synthesis and characterization of Yb and Er based monosilicate powders and durability of plasma sprayed Yb2SiO5 coatings on C/C–SiC composites

International Nuclear Information System (INIS)

Khan, Zuhair S.; Zou Binglin; Huang Wenzhi; Fan Xizhi; Gu Lijian; Chen Xiaolong; Zeng Shuibing; Wang Chunjie; Cao Xueqiang

2012-01-01

Highlights: ► Ultra-pure rare-earth monosilicate powders based on Er and Yb have been fabricated by solid-state reaction. ► Spray-drying treatment results in powders with free flowing characteristics and rounded surface morphologies. ► CTEs are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 . ► Plasma spraying has been used to deposit Yb 2 SiO 5 coatings on C/C–SiC substrate. ► Coatings remain strongly intact with the substrate on thermal cycling between ∼400 °C and 1500 °C in gas burner rig experiment. - Abstract: Rare-earth silicates such as Yb 2 SiO 5 and Er 2 SiO 5 are promising environmental barrier coating materials for ceramic matrix composites. In this work, Yb 2 SiO 5 and Er 2 SiO 5 ceramic powders have been synthesized by solid-state reaction using Yb 2 O 3 , Er 2 O 3 and SiO 2 as starting materials. The fabricated powders were subjected to spray drying treatment for subsequent synthesis of coatings by plasma spraying. The spray drying resulted in well-dispersed and spherical powder particles with good flowability. Analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), thermogravimetry and differential scanning calorimetry (TGA/DSC) and dilatometry were applied to study the microstructural and thermal characteristics of the powders. Ultra-high purity monosilicate powders formed as a result of heating treatments at 1400 °C in a box furnace for 20 h. TG/DSC revealed the genesis temperatures of the silicate formation (low temperature polymorphs) and also showed that the solid-state reactions to form Yb and Er based monosilicates proceeded without any weight-loss in the tested temperature range. The values of coefficients of thermal expansion (CTE) of the fabricated compounds are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 by dilatometric measurements. Besides these studies, coating formation by plasma spraying of spray-dried Yb 2 SiO 5 powders on the ceramic

Crystal structure of the Al2CuIr phase

International Nuclear Information System (INIS)

Meshi, L.; Ezersky, V.; Kapush, D.; Grushko, B.

2010-01-01

A new ternary Al 2 CuIr phase was revealed in the Al-Cu-Ir system. It is formed below 1063 o C from the β-phase (CsCl-type structure) extending at elevated temperatures from AlIr. The crystal structure of the Al 2 CuIr phase was determined using a combination of precession electron diffraction and X-ray powder diffraction techniques. The phase has an orthorhombic C-centered unit cell with lattice parameters a = 8.1196(7) A, b = 5.0646(2) A and c = 5.18513(3) A; its crystal symmetry can be described by the Cmme (no. 67) space group (Pearson symbol oC16). The unit cell of the new phase contains 8 Al, 4 Cu and 4 Ir atoms and exhibits a new structure type. The reliability factors characterizing the Rietveld refinement procedure are: R p = 4.45%, R wp = 6.45%, R B = 3.69% and R f = 2.41%.

Site preference of metal atoms in Gd_5_-_xM_xTt_4 (M = Zr, Hf; Tt = Si, Ge)

International Nuclear Information System (INIS)

Yao, Jinlei; Mozharivskyj, Yurij

2011-01-01

Zirconium and hafnium were incorporated into the Gd_5Ge_4 and Gd_5Si_4 parent compounds in order to study the metal-site occupation in the M_5X_4 magnetocaloric phases (M = metals; X = p elements) family. The Gd_5_-_xZr_xGe_4 phases adopt the orthorhombic Sm_5Ge_4-type (space group Pnma) structure for x ≤ 1.49 and the tetragonal Zr_5Si_4-type (P4_12_12) structure for x ≥ 1.77. The Gd_5_-_xHf_xSi_4 compounds crystallize in the orthorhombic Gd_5Si_4-type (Pnma) structure for x ≤ 0.41 and the Zr_5Si_4-type structure for x ≥ 0.7. In both systems, single-crystal X-ray diffraction reveals that the Zr/Hf atoms preferentially occupy the slab-surface M2 and slab-center M3 sites, both of which have a significantly larger Zr/Hf population than the slab-surface M1 site. The metal-site preference, i.e. the coloring problem on the three metal sites, is discussed considering geometric and electronic effects of the local coordination environments. The analysis of the metal-site occupation in Gd_5_-_xZr_xGe_4 and Gd_5_-_xHf_xSi_4 as well as other metal-substituted M_5X_4 systems suggests that both geometric and electronic effects can be used to explain the metal-site occupation. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth, spectral properties, and laser demonstration of Nd:(Lu0.5Gd0.5)2SiO5 crystal

International Nuclear Information System (INIS)

Li, D Z; Xu, X D; Wu, F; Xia, C T; Zhang, J; Ma, J; Cong, Z H; Tang, D Y; Zhu, H M; Chen, X Y; Xu, J

2011-01-01

A Nd:(Lu 0.5 Gd 0.5 ) 2 SiO 5 (Nd:LGSO) crystal has been grown by the Czochralski method. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intensity parameters Ω 2,4,6 were obtained to be 5.37, 1.63, and 5.57×10 -20 cm 2 , respectively. The absorption and emission cross sections and branching ratios were calculated. The Nd:LGSO crystal reveals a broadband emission feature (FWHM = 9.8 nm), which shows potential as gain medium for ultrashort pulse lasers. The radiative and fluorescence lifetimes are 299 and 230 μs, respectively, resulting in a quantum efficiency of 77%. Pumped by a laser diode, the maximum continuous wave (CW) output power of 444 mW and a slope efficiency of 17.7% have been obtained

Growth, spectral properties, and laser demonstration of Nd:(Lu0.5Gd0.5)2SiO5 crystal

Science.gov (United States)

Li, D. Z.; Xu, X. D.; Zhang, J.; Cong, Z. H.; Tang, D. Y.; Ma, J.; Zhu, H. M.; Chen, X. Y.; Wu, F.; Xia, C. T.; Xu, J.

2011-09-01

A Nd:(Lu0.5Gd0.5)2SiO5 (Nd:LGSO) crystal has been grown by the Czochralski method. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intensity parameters Ω2,4,6 were obtained to be 5.37, 1.63, and 5.57×10-20 cm2, respectively. The absorption and emission cross sections and branching ratios were calculated. The Nd:LGSO crystal reveals a broadband emission feature (FWHM = 9.8 nm), which shows potential as gain medium for ultrashort pulse lasers. The radiative and fluorescence lifetimes are 299 and 230 μs, respectively, resulting in a quantum efficiency of 77%. Pumped by a laser diode, the maximum continuous wave (CW) output power of 444 mW and a slope efficiency of 17.7% have been obtained.

Molecular structure and vibrational spectrum of the complex [ErL(H2O)(NO3)3] (L 1,4,10,13-tetraoxi-7,16-diaza(diphenylphosphinylmethyl) cyclooctadecane

International Nuclear Information System (INIS)

Minacheva, L.Kh.; Ivanova, I.S.; Kireeva, I.K.; Sakharova, V.G.; Tsivadze, A.Yu.; Sergienko, V.S.; Baulin, V.E.

2000-01-01

Synthesis of podandocoronand on the basis of diazo-18-crown-6 (DA18K6) 1,4,10,13-tetraoxi-7,16-diazo (diphenylphosphynylmethyl)cyclooctadecane (L) and erbium nitrate complex with L of the [ErL(H 2 O)(NO 3 ) 3 ] (I) composition is described. The IR-spectra of the free ligand L and complex I are studied and interpreted.The crystals are monoclinic: a = 10.432(2), b = 19.909(4), c = 21.361(4), β = 100.39(3) Deg, V = 4364(2) A 3 , sp. gr. P2 1 /n, Z = 4, ρ = 1.617 g/cm 3 . The structure I is formed of discrete molecular complexes. The Er atom coordination number is equal to 9. Three nitrate groups are bidentate-cyclic coordinated; two of them are in trans-position to each other; the H 2 O molecule is trans-position to the third NO 3 -group. The ligand L is coordinated by metal through two oxygen phosphoryl atoms. Thus, the Er atom coordination polyhedron may be described as octahedron, if each NO 3 -group occupies one coordination position. The Er-O(L) and Er-O(NO 3 ) overage distances are equal to 2.25 and 2.43 A correspondingly. Er-O(H 2 O) - 2.29 A. The H 2 O coordinated molecule forms intermolecular hydrogen atom and two oxygen atoms of the DA18K6 macrocycle [ru

On the enhancement of Er{sup 3+} diffusion in LiNbO{sub 3} crystals by Er{sup 3+}/Ti{sup 4+} co-diffusion

Energy Technology Data Exchange (ETDEWEB)

Almeida, José Manuel Marques Martins de, E-mail: jmmma@utad.pt [INESC-TEC, Rua do Campo Alegre, 687, Porto 4169-007 (Portugal); Department of Physics, School of Science and Technology, University of Trás-os-Montes e Alto Douro, PO. Box 1013, 5001-801 Vila Real (Portugal); Sada, Cinzia [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, 35131 Padova (Italy)

2016-02-15

Highlights: • Enhancement of the diffusion of erbium ions (Er{sup 3+}) in lithium niobate crystals. • Incoherence on published results lead to need for systematic revision of literature. • Further insight into the topic of co-diffusion of Er{sup 3+}/Ti{sup 4+} ions into LiNbO{sub 3}. - Abstract: After carrying out a revision of the literature on the enhancement of Er{sup 3+} diffusion in LiNbO{sub 3} crystals by Er{sup 3+}/Ti{sup 4+} co-diffusion and analyzing our own experimental results, we conclude that no reproducible results were reported, meaning that further research on this subject is necessary.

Experimental investigation and crystal-field modeling of Er{sup 3+} energy levels in GSGG crystal

Energy Technology Data Exchange (ETDEWEB)

Gao, J.Y., E-mail: jygao1985@sina.com [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China); Sun, D.L.; Zhang, Q.L. [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China); Wang, X.F. [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Liu, W.P.; Luo, J.Q.; Sun, G.H.; Yin, S.T. [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China)

2016-06-25

The Er{sup 3+}-doped Gd{sub 3}Sc{sub 2}Ga{sub 3}O{sub 12} (Er{sup 3+}:GSGG) single crystal, a excellent medium of the mid-infrared and anti-radiation solid state laser pumped by laser diode, was grown by Czochralski method successfully. The absorption spectra were measured and analyzed in a wider spectral wavelength range of 350–1700 nm at different temperatures of 7.6, 77, 200 and 300 K. The free-ions and crystal-field parameters were fitted to the experimental energy levels with the root mean square deviation of 9.86 cm{sup −1}. According to the crystal-field calculations, 124 degenerate energy levels of Er{sup 3+} in GSGG host crystals were assigned. The fitting results of free-ions and crystal-field parameters were compared with those already reported of Er{sup 3+}:YSGG. The results indicated that the free-ions parameters for Er{sup 3+} in GSGG host are similar to those in YSGG host crystals, and the crystal-field interaction of GSGG is weaker than that of YSGG, which may result in the better laser characterization of Er{sup 3+}:GSGG crystal. - Highlights: • The efficient diode-end-pumped laser crystal Er:GSGG has been grown successfully. • The absorption spectra of Er:GSGG have been measured in range of 350–1700 nm. • The fitting result is very well for the root mean square deviation is 9.86 cm{sup −1}. • The 124 levels of Er:GSGG have been assigned from the crystal-field calculations.

Influence of phosphorous precursors on spectroscopic properties of Er3+-activated SiO2-HfO2-P2O5 planar waveguides

International Nuclear Information System (INIS)

Vasilchenko, I; Carpentiero, A; Chiappini, A; Chiasera, A; Ferrari, M; Vaccari, A; Lukowiak, A; Righini, G C; Vereshagin, V

2014-01-01

(70-x)SiO 2 -30HfO 2 -xP 2 O 5 (x= 5, 10 mol %) glass planar waveguides activated by 0.5 mol% Er 3 + ions were prepared by sol-gel route. Several phosphorous precursors have been investigated for the synthesis of a dielectric stable sol useful for the realization of planar waveguides. The waveguides were investigated by different diagnostic techniques. The optical properties such as refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 632.8 and 543.5 nm by prism coupling technique. Transmission measurements were carried out in order to assess the transparency of the deposited films. Photoluminescence measurements and lifetime decay curves of the Er 3 + transition (4 I 13/2 → 4 I 15/2 ) were performed in order to investigate the role of P 2 O 5

Synthesis, FT–IR characterization and crystal structure of aqua(5,10,15,20-tetraphenylporphyrinato-κ4Nmanganese(III trifluoromethanesulfonate

Directory of Open Access Journals (Sweden)

Wafa Harhouri

2016-05-01

Full Text Available In the title salt, [Mn(C44H28N4(H2O](CF3SO3 or [MnIII(TPP(H2O](CF3SO3 (where TPP is the dianion of 5,10,15,20-tetraphenylporphyrin, the MnIII cation is chelated by the four pyrrole N atoms of the porphyrinate anion and additionally coordinated by an aqua ligand in an apical site, completing the distorted square-pyramidal coordination environment. The average Mn—N(pyrrole bond length is 1.998 (9 Å and the Mn—O(aqua bond length is 2.1057 (15 Å. The central MnIII ion is displaced by 0.1575 (5 Å from the N4C20 mean plane of the porphyrinate anion towards the apical aqua ligand. The porphyrinate macrocycle exhibits a moderate ruffling and strong saddle deformations. In the crystal lattice, the [MnIII(TPP(H2O]+ cation and the trifluoromethanesulfonate counter-ions are arranged in alternating planes packed along [001]. The components are linked together through O—H...O hydrogen bonds and much weaker C—H...O and C—H...F interactions. The crystal packing is further stabilized by weak C—H...π interactions involving the pyrrole and phenyl rings of the porphyrin moieties.

Yb{sub 6}Ir{sub 5}Ga{sub 7} - a MgZn{sub 2} superstructure

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, 48149, Muenster (Germany)

2017-02-15

The gallide Yb{sub 6}Ir{sub 5}Ga{sub 7} was synthesized by high-frequency melting of the elements in a sealed niobium ampoule. The structure was refined from single-crystal X-ray diffractometer data: Nb{sub 6.4}Ir{sub 4}Al{sub 7.6} type, P6{sub 3}/mcm, a = 930.4(1), c = 843.0(1) pm, wR{sub 2} = 0.0597, 379 F{sup 2} values and 22 variables. Yb{sub 6}Ir{sub 5}Ga{sub 7} adopts a superstructure of the MgZn{sub 2} Laves phase by a complete ordering of the iridium and gallium atoms on the zinc substructure, i.e. the network consists of ordered and condensed Ir{sub 3}Ga and IrGa{sub 3} tetrahedra with Ir-Ga distances ranging from 260 to 265 pm. The crystal chemical details and the underlying group-subgroup scheme are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

Science.gov (United States)

Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

2010-09-01

We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

Raman characterization of 0.4 nm single-walled carbon nanotubes formed in the channels of AlPO4-5 zeolite single crystals

International Nuclear Information System (INIS)

Ye, J T; Zhai, J P; Tang, Z K

2007-01-01

In this paper, we review our recent research on ultra-small single-walled carbon nanotubes (SWNTs). Using Raman scattering as a tool, we systematically studied the pyrolysis process of carbon precursors in the channels of AlPO 4 -5 zeolite single crystals, and studied the formation process of the ultra-small SWNTs in the channels. The thermal expansion behaviour and thermal stability of these ultra-small SWNTs, either confined in the AlPO 4 -5 channels or in a freestanding environment, were also studied as a function of temperature. The in situ Raman-scattering measurement under 1 x 10 -5 mbar showed that the (3, 3) and (4, 2) tubes were totally destroyed at a temperature of about 700 K, while the (5, 0) tube can survive to 790 K. The electronic states of the 0.4 nm SWNTs were modulated by means of lithium doping. The continuous electron charge transfer from lithium atoms to the tubes was traced using Raman scattering. With increasing doping level, the radial breathing modes of these tubes shifted to higher frequency because the vibration perpendicular to the tube axis was depressed, in contrast to the conventional softening and downshift of the tangential G-mode vibrations

Crystallization and magnetic properties of a 10Li{sub 2}O–9MnO{sub 2}–16Fe{sub 2}O{sub 3}–25CaO–5P{sub 2}O{sub 5}–35SiO{sub 2} glass

Energy Technology Data Exchange (ETDEWEB)

Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80708, Taiwan (China); Cheng, Huy-Zu [Department of Materials Science and Engineering, I-Shou University, 1 123456789Hsueh-Cheng Road, Section 1, Ta-Hsu, Kaohsiung 84001, Taiwan (China); Lin, Huey-Jiuan [Department of Materials Science and Engineering, National United University, 1 Lien-Da Road, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Chien-Fu [Department of Materials Science and Engineering, I-Shou University, 1 123456789Hsueh-Cheng Road, Section 1, Ta-Hsu, Kaohsiung 84001, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da Road, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2013-06-15

The crystallization behavior and magnetic properties of 10Li{sub 2}O–9MnO{sub 2}–16Fe{sub 2}O{sub 3}–25CaO–5P{sub 2}O{sub 5}–35SiO{sub 2} (10LFS) glass have been studied using differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) to observe the crystallization behavior and a superconducting quantum interference device (SQUID) for measurements of the magnetic properties. The DTA shows that the 10LFS glass has one broad exothermic peak at approximately 674 °C and one sharp (the highest) exothermic peak at 764 °C. When the 10LFS glass crystallized at 850 °C for 4 h, the crystalline phases identified by XRD were lithium silicate (Li{sub 2}SiO{sub 3}), β-wollastonite (β-CaSiO{sub 3}), lithium orthophosphate (Li{sub 3}PO{sub 4}), magnetite (FeFe{sub 2}O{sub 4}) and triphylite (Li(Mn{sub 0.5}Fe{sub 0.5})PO{sub 4}). The SEM surface analysis revealed that the β-wollastonite and lithium silicate have a lath morphology. The TEM microstructure examination showed that the largest FeFe{sub 2}O{sub 3} particles have a size of approximately 0.3 μm. When the 10LFS glass was heat treated at 850 °C for 16 h and a magnetic field of 1000 Oe was applied, a very small remnant magnetic induction of 0.01 emu g{sup −1} and a coercive force of 50 Oe were obtained, which revealed an inverse spinel structure. - Highlights: ► The phases formed at 850 °C in the 10LFS glass-ceramics are LiSiO{sub 3}, β-CaSiO{sub 3}, Li{sub 3}PO{sub 4}, FeFe{sub 2}O{sub 4} and Li(Mn{sub 0.5}Fe{sub 0.5})PO{sub 4}. ► The β-wollastonite and lithium silicate have a lath morphology. ► When 10LFS glass-ceramics applied magnetic field showing the ferromagnetic behavior of an inverse spinel structure.

Crystallization and Martensitic Transformation Behavior of Ti-Ni-Si Alloy Ribbons Prepared via Melt Spinning.

Science.gov (United States)

Park, Ju-Wan; Kim, Yeon-Wook; Nam, Tae-Hyun

2018-09-01

Ti-(50-x)Ni-xSi (at%) (x = 0.5, 1.0, 3.0, 5.0) alloy ribbons were prepared via melt spinning and their crystallization procedure and transformation behavior were investigated using differential scanning calorimtry, X-ray diffraction, and transmission electron microscopy. Ti-Ni-Si alloy ribbons with Si content less than 1.0 at% were crystalline, whereas those with Si content more than 3.0 at% were amorphous. Crystallization occurred in the sequence of amorphous →B2 → B2 → Ti5Si4 + TiNi3 → B2 + Ti5Si4 + TiNi3 + TiSi in the Ti-47.0Ni-3.0Si alloy and amorphous →R → R + Ti5Si4 + TiNi3 → R + Ti5Si4 + TiNi3 + TiSi in the Ti-45.0Ni-5.0Si alloy. The activation energy for crystallization was 189 ±8.6 kJ/mol for the Ti-47Ni-3Si alloy and 212±8.6 kJ/mol for the Ti-45Ni-5Si alloy. One-stage B2-R transformation behavior was observed in Ti-49.5Ni-0.5Si, Ti-49.0Ni-1.0Si, and Ti-47.0Ni- 3.0Si alloy ribbons after heating to various temperatures in the range of 873 K to 1073 K. In the Ti-45.0Ni-5.0Si alloy, one-stage B2-R transformation occurred after heating to 893 K, two-stage B2-R-B19' occurred after heating to 973 K, and two-stage B2-R-B19' occurred on cooling and one-stage B19'-B2 occurred on heating, after heating to 1073 K.

Three coordination polymers constructed from 5-(4-(tetrazol-5-yl)phenyl)isophthalic acid: Synthesis, crystal structure and properties

Science.gov (United States)

Zhai, Dandan; Sun, Wujuan; Fan, Fei; Liao, Xuzhao; Chen, Sanping; Yang, Xuwu

2017-04-01

Three new coordination polymers, namely, {[Co2(TPA)(μ3-O)3]·0.5DMA}n (1), {[Co(H2TPA)(bibp)(H2O)3]·H2O}n (2) and {[Cd3(TPA)2(phen)4]·4H2O}n (3), (H3TPA = 5-(4-(tetrazol-5-yl)phenyl)isophthalic acid, bibp = 4,4'-bis(imidazolyl)biphenyl, phen = 1,10-phenanthroline and DMA = N,N-dimethylacetamide), have been synthesized under solvothermal conditions and structurally characterized by elemental analysis, IR spectroscopy, powder X-ray diffraction (PXRD) and single-crystal X-ray diffraction analysis. Polymer 1 exhibits a three-dimensional (3D) structure constructed from 5-connected secondary building units (SBUs) [Co3(μ3-O)] and 3-connected H3TPA ligands. Polymer 2 has a 1D zigzag polymer chain connected by H3TPA and bibp ligands. Polymer 3 features an unusual 3D framework with a (3,4,2)-connected {4; 6;8}{4; 62;83} topology. Moreover, the thermal stabilities of 1-3 and photoluminescence properties of 3 have been investigated. Magnetic susceptibility measurements indicate that polymers 1-2 display antiferromagnetic exchange properties.

Two anhydrous zeolite X crystal structures, Pd sub 1 sub 8 Tl sub 5 sub 6 Si sub 1 sub 0 sub 0 Al sub 9 sub 2 O sub 3 sub 8 sub 4 and Pd sub 2 sub 1 Tl sub 5 sub 0 Si sub 1 sub 0 sub 0 Al sub 9 sub 2 O sub 3 sub 8 sub 4

CERN Document Server

Yoon, B Y; Lee, S H; Kim, Y

2001-01-01

The crystal structures of fully dehydrated Pd sup 2 sup + - and Tl sup + -exchanged zeolite X, Pd sub 1 sub 8 Tl sub 5 sub 6 Si sub 1 sub 0 sub 0 Al sub 9 sub 2 O sub 3 sub 8 sub 4 (Pd sub 1 sub 8 Tl sub 5 sub 6 X, a = 24.935(4) A) and Pd sub 2 sub 1 Tl sub 5 sub 0 Si sub 1 sub 0 sub 0 Al sub 9 sub 2 O sub 3 sub 8 sub 4 (Pd sub 2 sub 1 Tl sub 5 sub 0 -X, a = 24.914(4) A), have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at 21(1) .deg. C. The crystals were prepared using an exchange solution that had a Pd(NH sub 3) sub 4 Cl sub 2 : TINO sub 3 mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05 M for 4 days. After dehydration at 360 .deg. C and 2 x 10 sup - sup 6 Torr in flowing oxygen for 2 days, the crystals were evacuated at 21(1) .deg. C for 2 hours. They were refined to the final error indices R sub 1 = 0.045 and R sub 2 = 0.038 with 344 reflections for Pd sub 1 sub 8 Tl sub 5 sub 6 -X, and R sub 1 = 0.043 and R sub 2 = 0.045 with ...

Lattice sites and stability of implanted Er in FZ and CZ Si

CERN Document Server

Wahl, U; Langouche, G; Vantomme, A

1998-01-01

We report on the lattice location of $^{167}$Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T) sites directly following 60 keV room temperature implantation at doses of 6 $\\times 10^{12}$ cm$^{-2}$. For higher doses, the as-implanted near-T fractions of Er visible by emission channeling are smaller, due to the beginning of amorphization. Following the recovery of implantation damage at 600°C, more than 70% of Er is found on near-T sites in both FZ and CZ Si. In FZ Si, Er exhibits a remarkable thermal stability and only prolonged annealing for several hours reduces the near-T fraction. On the other hand, annealing of CZ Si at 900°C for more than 10 minutes results in the majority of Er probes in sites of very low symmetry or disordered surroundings.

Synthesis, crystal structure and DFT studies of N-(4-acetyl-5,5-dimethyl-4,5-dihydro-1,3,4-thiadiazol-2-yl)acetamide

Science.gov (United States)

Gautam, P.; Gautam, D.; Chaudhary, R. P.

2013-12-01

The title compound N-(4-acetyl-5,5-dimethyl-4,5-dihydro-1,3,4-thiadiazol-2-yl)acetamide ( III) was obtained from the reaction of 2-(propan-2-ylidene)hydrazinecarbothioamide ( II) with acetic anhydride instead of formation of the desired thiosemcarbazide derivative of Meldrum acid. The structures of II and III were established by elemental analysis, IR, NMR, Mass and X-ray crystallographic studies. II crystallizes in triclinic system, sp. gr. Z = 2; III crystallizes in the monoclinic system, sp. gr. P21/ c, Z = 8. Density functional theory (DFT) calculations have been carried out for III. 1H and 13C NMR of III has been calculated and correlated with experimental results.

Synthesis, crystal structure and DFT studies of N-(4-acetyl-5,5-dimethyl-4,5-dihydro-1,3,4-thiadiazol-2-yl)acetamide

International Nuclear Information System (INIS)

Gautam, P.; Gautam, D.; Chaudhary, R. P.

2013-01-01

The title compound N-(4-acetyl-5,5-dimethyl-4,5-dihydro-1,3,4-thiadiazol-2-yl)acetamide (III) was obtained from the reaction of 2-(propan-2-ylidene)hydrazinecarbothioamide (II) with acetic anhydride instead of formation of the desired thiosemcarbazide derivative of Meldrum acid. The structures of II and III were established by elemental analysis, IR, NMR, Mass and X-ray crystallographic studies. II crystallizes in triclinic system, sp. gr. P-bar1 Z = 2; III crystallizes in the monoclinic system, sp. gr. P2 1 /c, Z = 8. Density functional theory (DFT) calculations have been carried out for III. 1 H and 13 C NMR of III has been calculated and correlated with experimental results

Optical Properties of the Fresnoite Ba2TiSi2O8 Single Crystal

Directory of Open Access Journals (Sweden)

Chuanying Shen

2017-02-01

Full Text Available In this work, using large-sized single crystals of high optical quality, the optical properties of Ba2TiSi2O8 were systematically investigated, including transmission spectra, refractive indices and nonlinear absorption properties. The crystal exhibits a high transmittance (>84% over a wide wavelength range from 340 to 2500 nm. The refractive indices in the range from 0.31256 to 1.01398 μm were measured, and Sellmeier’s equations were fitted by the least squares method. The nonlinear absorption properties were studied by using the open-aperture Z-scan technique, with a nonlinear absorption coefficient measured to be on the order of 0.257 cm/GW at the peak power density of 16.4 GW/cm2. Such high transmittance and wide transparency indicate that optical devices using the Ba2TiSi2O8crystal can be applied over a wide wavelength range. Furthermore, the small nonlinear absorption observed in Ba2TiSi2O8 will effectively increase the optical conversion efficiency, decreasing the generation of laser damage of the optical device.

Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

Science.gov (United States)

Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

2014-09-01

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

Continuously tunable cw lasing near 2.75 μm in diode-pumped Er3+ : SrF2 and Er3+ : CaF2 crystals

International Nuclear Information System (INIS)

Basiev, Tasoltan T; Orlovskii, Yu V; Polyachenkova, M V; Fedorov, Pavel P; Kuznetsov, S V; Konyushkin, V A; Osiko, Vyacheslav V; Alimov, Olimkhon K; Dergachev, Alexey Yu

2006-01-01

CW lasing is obtained in Er 3+ (5%) : CaF 2 and Er 3+ (5%) : SrF 2 crystals near 2.75 μm with 0.4 and 2 W of output powers, respectively, upon transverse diode laser pumping into the upper 4 I 11/2 laser level of erbium ions at 980 nm. Continuous tuning of the laser wavelength between 2720 and 2760 nm is realised in the Er 3+ : SrF 2 crystal. (special issue devoted to the 90th anniversary of a.m. prokhorov)

Crystal structure of zdenekite NaPbCu5(AsO4)4Cl · 5H2O

International Nuclear Information System (INIS)

Zubkova, N.V.; Pushcharovsky, D.Yu.; Sarp, H.; Teat, S. J.; MacLean, E. J.

2003-01-01

The crystal structure of the mineral zdenekite NaPbCu 5 (AsO 4 ) 4 Cl · 5H 2 O was established (Bruker SMART CCD diffractometer, synchrotron radiation, λ = 0.6843 A, R = 0.096 for 1356 reflections). Single-crystal X-ray diffraction study demonstrated that zdenekite belongs to the monoclinic system with the unit-cell parameters a = 10.023(7) A, b 19.55(1) A, c = 10.023(6) A, β = 90.02(1) deg., sp. gr. P2 1 /n, Z = 4. The structure consists of polyhedral layers parallel to the (010) plane. These layers are formed by Cuφ 5 polyhedra (φ = O, Cl, H 2 O) and AsO 4 tetrahedra. Distorted Na octahedra and Pb 7-vertex polyhedra and H 2 O molecules coordinated to these metal atoms are located between the layers

Spectral properties of Er{sup 3+}-doped CaGdAlO{sub 4} crystal for laser application around 1.55 μm

Energy Technology Data Exchange (ETDEWEB)

Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F; Luo, Z.D.; Huang, Y.D., E-mail: huyd@fjirsm.ac.cn

2014-02-05

Highlights: • Detailed spectral properties of the Er:CaGdAlO{sub 4} crystal have been investigated. • Multi-phonon relaxation rate of Er{sup 3+} ions in the Er:CaGdAlO{sub 4} crystal is estimated. • The quantum efficiency of the {sup 4}I{sub 13/2} level in the Er:CaGdAlO{sub 4} crystal is near 100%. -- Abstract: Room-temperature polarized spectral properties of the Er:CaGdAlO{sub 4} crystal are reported. The Judd–Ofelt theory was applied to analyze the polarized absorption spectra and then calculate the spontaneous emission probabilities, radiative lifetimes, and branch ratios. Room-temperature fluorescence lifetimes of the {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}F{sub 9/2}, and {sup 4}S{sub 3/2} multiplets for Er{sup 3+} ions were measured. Stimulated emission cross-sections of the {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} transition obtained by the Fuchtbauer–Ladenberg formula and the reciprocity method were compared. The results show that the Er:CaGdAlO{sub 4} crystal may be a potential gain medium for a low-threshold 1.55 μm laser.

Suppression effect of silicon (Si on Er3+ 1.54μm excitation in ZnO thin films

Directory of Open Access Journals (Sweden)

Bo Xu

2016-08-01

Full Text Available We have investigated the photoluminescence (PL characteristics of ZnO:Er thin films on Si (100 single crystal and SiO2-on-silicon (SiO2 substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS, X-ray diffraction (XRD and atomic force microscope (AFM were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS. Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT, PL (1.54μm intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er3+ 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er3+ was very low when compared with silicon nanocrystal (Si-NC. Both made the PL (1.54μm intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

Science.gov (United States)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Non-isothermal crystallization kinetics and phase transformation of Bi2O3-SiO2 glass-ceramics

Directory of Open Access Journals (Sweden)

Guo H.W.

2011-01-01

Full Text Available The Bi2O3-SiO2 (BS glass-ceramics were prepared by melt-quench technique, and the crystallization kinetics and phase transformation behavior were investigated in accordance with Kissinger and Johson-Mehl-Avrami equation, DSC, XRD and SEM. The results show that in the heat treatment process (or termed as re-crystallizing process Bi2SiO5 and Bi4Si3O12 crystals were found consequently. Respectively, the crystallization activation energies of the two crystals are Ep1=14.8kJ/mol and Ep2=34.1kJ/mol. And the average crystallization index of n1=1.73 and n2=1.38 suggested volume nucleation, one-dimensional growth and surface nucleation, one-dimensional growth from surface to the inside respectively. The meta-stable needle-like Bi2SiO5 crystals are easily to be transformed into stable prismatic Bi4Si3O12 crystals. By quenching the melt and hold in 850°C for 1h, the homogenous single Bi4Si3O12 crystals were found in the polycrystalline phase of the BS glassceramics system.

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

International Nuclear Information System (INIS)

Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S.M.

2009-01-01

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T c =51 deg. C (for pure TGS, T c =48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Science.gov (United States)

Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S. M.

2009-11-01

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 °C/min. An increase in the Curie temperature Tc=51 °C (for pure TGS, Tc=48.5 °C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Crystal Growth and Characterization of MT2Si2 Ternary Intermetallics (M = U, RE and T = 3d, 4d, 5d Transition Metals)

NARCIS (Netherlands)

Menovsky, A.A.; Moleman, A.C.; Snel, G.E.; Gortenmulder, T.J.; Palstra, T.T.M.

1986-01-01

Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified “tri-arc” Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The

Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl4O2N4

International Nuclear Information System (INIS)

Banno, Hiroki; Hanai, Takaaki; Asaka, Toru; Kimoto, Koji; Fukuda, Koichiro

2014-01-01

The crystal structure of SiAl 4 O 2 N 4 was characterized by laboratory X-ray powder diffraction (CuKα 1 ). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm 3 . The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R wp =5.05%, S (=R wp /R e )=1.21, R p =3.77%, R B =1.29% and R F =1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm −3 ) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl 4 O 2 N 4 . Highlights: • Crystal structure of SiAl 4 O 2 N 4 is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements

ACRT technique for the single crystal growth of the heavy fermion compound YbRh{sub 2}Si{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Witt, Sebastian; Kliemt, Kristin; Butzke, Constantin; Krellner, Cornelius [Goethe University Frankfurt, 60438 Frankfurt am Main (Germany)

2016-07-01

In the heavy fermion compound YbRh{sub 2}Si{sub 2} the antiferromagnetic ordering below 70 mK close to a quantum critical point is well-studied. Beneath the magnetic ordering a new phase transition was found recently at 2 mK. It is necessary to prepare large and high-quality single crystals for studying the nature of this new phase transition. Besides the optimization of the single crystal growth it is important to investigate single crystals with different isotopes at this phase transition. Here, we report the crystal growth of YbRh{sub 2}Si{sub 2} with the accelerated crucible rotation technique (ACRT). ACRT shows for other compounds, e.g. YAG (yttrium aluminum garnet, Y{sub 3}Al{sub 5}O{sub 12}), that this technique can reduce flux impurities and enhance the yield of larger crystals. We also report the attempt to receive metallic isotopes of ytterbium with metallothermic reduction. Crystals with different isotopes of silicon and ytterbium can be used for NMR measurements to investigate the underlying phenomena of quantum criticality in more detail.

New orthorhombic derivative of CaCu{sub 5}-type structure: RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho), crystal structure and some magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@general.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India)

2013-12-15

The crystal structure of new YNi{sub 4}Si-type RNi{sub 4}Si (R=Y, La, Ce, Sm, Gd–Ho) compounds has been established using powder X-ray diffraction. The YNi{sub 4}Si structure is a new structure type, which is orthorhombic derivative of CaCu{sub 5}-type structure (space group Cmmm N 65, oC12). GdNi{sub 4}Si and DyNi{sub 4}Si compounds order ferromagnetically at 25 and 19 K, respectively whereas YNi{sub 4}Si shows antiferromagnetic nature. At 15 K, DyNi{sub 4}Si shows second antiferromagnetic-like transition. The magnetic moment of GdNi{sub 4}Si at 5 K in 50 kOe field is ∼7.2 μ{sub B}/f.u. suggesting a completely ordered ferromagnetic state. The magnetocaloric effect of GdNi{sub 4}Si is calculated in terms of isothermal magnetic entropy change and it reaches the maximum value of −12.8 J/kg K for a field change of 50 kOe near T{sub C} ∼25 K. - Graphical abstract: The RNi{sub 4}Si (R=Y, La, Ce, Sm, Gd–Ho) compounds crystallize in new YNi{sub 4}Si-type structure which is orthorhombic derivative of the basic CaCu{sub 5}-type structure. GdNi{sub 4}Si and DyNi{sub 4}Si compounds show the ferromagnetic-like ordering, whereas.YNi{sub 4}Si has the antiferromagnetic nature. The GdNi{sub 4}Si demonstrates the big magnetocaloric effect near temperature of ferromagnetic ordering. The relationship between initial CaCu{sub 5}-type DyNi{sub 5} and YNi{sub 4}Si-type DyNi{sub 4}Si lattices.

Defects Identification and Effects of Annealing on Lu2(1-xY2xSiO5 (LYSO Single Crystals for Scintillation Application

Directory of Open Access Journals (Sweden)

Samuel Blahuta

2011-07-01

Full Text Available The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL in Lu2(1-xY2xSiO5 (LYSO single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ, revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

Spatially selective Er/Yb-doped CaF{sub 2} crystal formation by CO{sub 2} laser exposure

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo, E-mail: kslim@chungbuk.ac.kr

2014-10-30

Highlights: • Oxyfluoride glass–ceramics containing CaF{sub 2} nanocrystals doped with Er{sup 3+} and Yb{sup 3+} ions were formed on the glass surface by CO{sub 2} laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF{sub 2} nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO{sub 2} laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF{sub 2} and miner Ca{sub 2}SiO{sub 4} nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment.

Spatially selective Er/Yb-doped CaF{sub 2} crystal formation by CO{sub 2} laser exposure

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo, E-mail: kslim@chungbuk.ac.kr

2015-04-15

Highlights: • Oxyfluoride glass–ceramics containing CaF{sub 2} nanocrystals doped with Er{sup 3+} and Yb{sup 3+} ions were formed on the glass surface by CO{sub 2} laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF{sub 2} nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO{sub 2} laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF{sub 2} and miner Ca{sub 2}SiO{sub 4} nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment.

Synthesis, crystal structure and DFT studies of N-(4-acetyl-5,5-dimethyl-4,5-dihydro-1,3,4-thiadiazol-2-yl)acetamide

Energy Technology Data Exchange (ETDEWEB)

Gautam, P.; Gautam, D.; Chaudhary, R. P., E-mail: rpchaudhary65@gmail.com [Sant Longowal Institute of Engineering and Technology, Department of Chemistry (India)

2013-12-15

The title compound N-(4-acetyl-5,5-dimethyl-4,5-dihydro-1,3,4-thiadiazol-2-yl)acetamide (III) was obtained from the reaction of 2-(propan-2-ylidene)hydrazinecarbothioamide (II) with acetic anhydride instead of formation of the desired thiosemcarbazide derivative of Meldrum acid. The structures of II and III were established by elemental analysis, IR, NMR, Mass and X-ray crystallographic studies. II crystallizes in triclinic system, sp. gr. P-bar1 Z = 2; III crystallizes in the monoclinic system, sp. gr. P2{sub 1}/c, Z = 8. Density functional theory (DFT) calculations have been carried out for III. {sup 1}H and {sup 13}C NMR of III has been calculated and correlated with experimental results.

Crystallization and spectroscopic properties investigations of Er3+ doped transparent glass ceramics containing CaF2

International Nuclear Information System (INIS)

Hu Zhongjian; Wang Yuansheng; Ma En; Bao Feng; Yu Yunlong; Chen Daqin

2006-01-01

Transparent oxyfluoride glass ceramics with composition of 45SiO 2 -25Al 2 O 3 -5CaCO 3 -10NaF-15CaF 2 -0.5ErF 3 (in mol%) were developed through controlled crystallization of melt-quenched glass. Non-isothermal crystallization kinetics investigation showed that the average apparent activation energy E a and Avrami exponent n are about 283 kJ/mol and 2.22, respectively, indicating the crystallization a three dimensional crystal growth process controlled by the diffusion with a decreasing nucleation rate. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) observation revealed the precipitation of CaF 2 crystallites sized about 15 nm among the glass matrix after heat-treatment at 650 deg. C for 2 h. For as-made glass, no upconversion signals were detected when excited with a 30 mW diode laser at 980 nm, while strong upconversion emissions at 545, 660 and 800 nm were obtained for transparent glass ceramic under similar excitation condition

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Science.gov (United States)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Electrical conduction studies in ferric-doped KHSO 4 single crystals

Science.gov (United States)

Sharon, M.; Kalia, A. K.

1980-03-01

Direct-current conductivity of ferric-doped (138, 267, and 490 ppm) single crystals of KHSO 4 has been studied. The mechanism for the dc conduction process is discussed. It is observed that the ferric ion forms a (Fe 3+-two vacancies) complex and the enthaply for its formation is 0.09 ± 0.01 eV. It is proposed that each ferric ion removes two protons from each HSO 4 dimer. The conductivity plot shows the presence of intrinsic and extrinsic regions. It is proposed that in the intrinsic region the dimer of HSO -4 breaks reversibly to form a long-chain monomer-type structure. The conductivity in the KHSO 4 crystal is proposed to be controlled by the rotation of HSO -4 tetrahedra along the axis which contains no hydrogen atom. Isotherm calculation for the trivalent-doped system is applied to this crystal and the results are compared with Co 2+-doped KHSO 4 crystal. The distribution coefficient of ferric ion in the KHSO 4 single crystal is calculated to be 4.5 × 10 -1. Ferric ion causes tapering in the crystal growth habit of KHSO 4 and it is believed to be due to the presence of (Fe 3+-two vacancies) complex. The enthalpy values for the various other processes are as follows: enthalpy for the breakage of HSO -4 dimer ( Hi) = 1.28 ± 0.01 eV; enthalpy for the rotation of HSO -4 tetrahedron ( Hm) = 0.58 ± 0.01 eV.

Rare earth ruthenium gallides with the ideal composition Ln_2Ru_3Ga_5 (Ln = La-Nd, Sm) crystallizing with U_2Mn_3Si_5 (Sc_2Fe_3Si_5) type structure

International Nuclear Information System (INIS)

Jeitschko, Wolfgang; Schlueter, Martin

2010-01-01

The rare earth ruthenium gallides Ln_2Ru_3Ga_5 (Ln = La, Ce, Pr, Nd, Sm) were prepared by arc-melting of cold-pressed pellets of the elemental components. They crystallize with a tetragonal structure (P4/mnc, Z = 4) first reported for U_2Mn_3Si_5. The crystal structures of the cerium and samarium compounds were refined from single-crystal X-ray data, resulting in significant deviations from the ideal compositions: Ce_2Ru_2_._3_1_(_1_)Ga_5_._6_9_(_1_), a = 1135.10(8) pm, c = 580.58(6) pm, R_F = 0.022 for 742 structure factors; Sm_2Ru_2_._7_3_(_2_)Ga_5_._2_7_(_2_), a = 1132.95(9) pm, c = 562.71(6) pm, R_F = 0.026 for 566 structure factors and 32 variable parameters each. The deviations from the ideal compositions 2:3:5 are discussed. A mixed Ru/Ga occupancy occurs only for one atomic site. The displacement parameters are relatively large for atoms with mixed occupancy within their coordination shell and small for atoms with no neighboring sites of mixed occupancy. Chemical bonding is analyzed on the basis of interatomic distances. Ln-Ga bonding is stronger than Ln-Ru bonding. Ru-Ga bonding is strong and Ru-Ru bonding is weak. The Ga-Ga interactions are of similar strength as in elemental gallium. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Conversion of broadband IR radiation and structural disorder in lithium niobate single crystals with low photorefractive effect

Science.gov (United States)

Litvinova, Man Nen; Syuy, Alexander V.; Krishtop, Victor V.; Pogodina, Veronika A.; Ponomarchuk, Yulia V.; Sidorov, Nikolay V.; Gabain, Aleksei A.; Palatnikov, Mikhail N.; Litvinov, Vladimir A.

2016-11-01

The conversion of broadband IR radiation when the noncritical phase matching condition is fulfilled in lithium niobate (LiNbO3) single crystals with stoichiometric (R = Li/Nb = 1) and congruent (R = 0.946) compositions, as well as in congruent single crystals doped with zinc has been investigated. It is shown that the spectrum parameters of converted radiation, such as the conversion efficiency, spectral width and position of maximum, depend on the ordering degree of structural units of the cation sublattice along the polar axis of crystal.

Structure, magnetism, and transport of single-crystalline R NiSi3 (R = Y, Gd-Tm, Lu)

Science.gov (United States)

Arantes, Fabiana R.; Aristizábal-Giraldo, Deisy; Masunaga, Sueli H.; Costa, Fanny N.; Ferreira, Fabio F.; Takabatake, Toshiro; Mendonça-Ferreira, Leticie; Ribeiro, Raquel A.; Avila, Marcos A.

2018-04-01

We report on the physical properties of the intermetallic series R NiSi3 (R =Y , Gd-Tm, Lu). High quality single crystals with platelike morphology were grown using the Sn flux method. X-ray powder diffraction data show that this series crystallizes in the orthorhombic space group Cmmm, and Laue patterns indicate that the b axis remains perpendicular to the plane of the plates. Magnetization measurements show anisotropic antiferromagnetic ground states for R = Gd-Tm with Néel temperatures ranging from TN=2.6 K (TmNiSi3) up to 32.2 K (TbNiSi3), as well as metamagnetic transitions that in some cases appear together with hysteresis (TbNiSi3,DyNiSi3, and HoNiSi3). The easy axis changes from a axis to b axis on going from R = Gd-Ho to R = Er-Tm. All transitions from antiferromagnetic to paramagnetic states are clearly marked by sharp peaks in specific heat as well as in the derivative of resistivity measurements, which show metallic temperature dependence for all compounds and residual values in the range of 1 μ Ω cm . DyNiSi3 has two close phase transitions, while HoNiSi3 presents distinct critical temperatures for applied fields in the a or c directions (10.4 and 6.3 K, respectively), pointing to possible component-specific ordering of the local magnetic moments.

X-ray diffraction study of stacking faults in a single crystal of 2H SiC

International Nuclear Information System (INIS)

Pandey, D.; Krishna, P.

1977-01-01

The nature of random stacking faults in a heavily disordered single crystal of 2H SiC has been investigated by studying the broadening of x-ray diffraction maxima. The intensity distribution along the 10.1 reciprocal lattice row was recorded on a four-circle, computer-controlled single crystal diffractometer. The 10.1 reflections with 1 even were found to be considerably broadened showing that the stacking faults present are predominantly intrinsic faults ( both growth and deformation faults). A careful study of the half-width values of different 10.1 reflections revealed that the fault probabilities are large. Exact expressions for the diffracted intensity and the observable diffraction effects were obtained and these were then used to calculate the deformation and growth fault probabilities which were found to be 0.20 and 0.11 respectively. It is suggested that several deformation fault configurations result from a clustering of growth faults. The results obtained are compared with those obtained for 2H ZnS crystals. (author)

Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Bo; Lu, Fei, E-mail: lufei@sdu.edu.cn; Fan, Ranran [School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100 (China); Ma, Changdong [Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250100 (China)

2016-08-15

We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

Melt growth of zinc aluminate spinel single crystal by the micro-pulling down method under atmospheric pressure

Science.gov (United States)

Kamada, K.; Shoji, Y.; Yamaji, A.; Kurosawa, S.; Yokota, Yuui; Ohashi, Y.; Kim, Kyoung Jin; Ivanov, M.; Kochurikhin, V. V.; Yoshikawa, A.

2018-06-01

ZnAl2O4 crystals were grown using few starting compositions with various ZnO:AlO3/2 ratio using an Ir wire seed and Ir + Re crucible under ordinary pressure with Ar + 2%O2 atmosphere by the radiofrequency heating μ-PD furnace. The ZnAl2O4 spinel single crystal with 4 mm diameter could be successfully grown by the μ-PD method by optimization of starting melt composition considering with Zinc oxide evaporation. During 10 min of growth under normal pressure the formation of ZnAl2O4 single phase observed even at high vapor pressure of ZnO. The transmittance spectra and X-ray locking curve were measured for evaluating of grown ZnAl2O4 crystals quality.

Er3+ impurities in KTiOPO4 studied by electron paramagnetic resonance

International Nuclear Information System (INIS)

Bravo, D; MartIn, A; Carvajal, J J; Aguilo, M; DIaz, F; Lopez, F J

2006-01-01

An electron paramagnetic resonance (EPR) study of Er 3+ ions in single crystals of KTiOPO 4 (KTP) is presented. The EPR spectra show the existence of eight different Er 3+ centres. The g-matrix has been determined for all eight centres from the analysis of the angular dependences of the spectrum in three planes of the crystal. This study provides strong evidence about incorporation of erbium in the low-symmetry K + sites of KTP. Possible reasons for the appearance of such a large number of Er 3+ centres are discussed

Interaction of Ce{sub 1−x}Er{sub x}O{sub 2−y} nanoparticles with SiO{sub 2}-effect of temperature and atmosphere

Energy Technology Data Exchange (ETDEWEB)

Kepinski, L., E-mail: L.Kepinski@int.pan.wroc.pl; Krajczyk, L.; Mista, W.

2014-01-15

Morphology, microstructure and phase evolution of homogeneous, nanocrystalline Ce{sub 1−x}Er{sub x}O{sub 2−x/2} mixed oxide (x=0.3 and 0.5), prepared by microemulsion method, supported on amorphous SiO{sub 2} was studied in oxidizing and reducing atmosphere by XRD, TEM, SEM-EDS and N{sub 2} adsorption. The system is structurally and chemically stable in the oxidizing atmosphere up to 1000 °C, exhibiting only a small increase of the mean crystallite size of the oxide to ∼4 nm. At 1100 °C formation of Er silicate with unusual structure isomorphic with y-Y{sub 2}Si{sub 2}O{sub 7} (yttrialite), stabilized by Ce{sup 4+} ions was observed. In the reducing atmosphere the Ce{sub 1−x}Er{sub x}O{sub 2−x/2} reacted with SiO{sub 2} already at 900 °C, due to high affinity of the reduced Ce{sup 3+} to form a silicate phase. At higher temperature the silicate crystallized into the tetragonal, low temperature A-(Ce{sub 1−x}Er{sub x}){sub 2}Si{sub 2}O{sub 7} polymorph. Such systems, containing nanocrystalline silicate particles with Er{sup 3+} ions placed in well defined sites embedded in silica matrix, may be interesting as highly efficient active components of optical waveguides amplifiers integrated with Si microelectronics. The nanocrystalline Ce–Er–O/SiO{sub 2} system prepared by the impregnation of the silica with the aqueous solution of nitrates appeared to be chemically inhomogeneous and less stable in both oxidising and reducing atmosphere. - Graphical abstract: Structure evolution of Ce{sub 0.5}Er{sub 0.5}O{sub 1.75} in air and in H{sub 2}. Display Omitted - Highlights: • Homogeneous 3 nm Ce{sub 1−x}Er{sub x}O{sub 2−y} particles were prepared and uniformly dispersed on SiO{sub 2}. • Er diffusion to SiO{sub 2} determines the stability of the mixed oxide in air to ∼1000 °C. • Spreading of Ce{sub 1−x}Er{sub x}O{sub 2−y} onto SiO{sub 2} occurs in hydrogen at 900 °C. • Nanocrystalline A-(Ce,Er){sub 2}Si{sub 2}O{sub 7} silicate forms in H

Synthesis, spectral characteristics, and the crystal and molecular structures of 2,3-dimethyl-1-phenyl-4-(N-phthalimido)pyrazolone-5

International Nuclear Information System (INIS)

Sokol, V. I.; Strashnova, S. B.; Kovalchukova, O. V.; Sergienko, V. S.; Davydov, V. V.; Zaitsev, B. E.; Evtushenko, Yu. M.

2008-01-01

2,3-Dimethyl-1-phenyl-4-(N-phthalimido)pyrazolone-5 (I) is synthesized and isolated in the form of single crystals. The crystal structure of compound I is determined using X-ray diffraction. The phthalimide and pyrazolone rings in the molecule are not coplanar: the angle between their median planes is 56.4 o . The bond lengths in the rings level off, which indicates the delocalization of the electron density. The spectral characteristics (IR and electronic spectra) of molecule I are determined.

π–π-Induced aggregation and single-crystal fluorescence anisotropy of 5,6,10b-triazaacephenanthrylene

Directory of Open Access Journals (Sweden)

Katarzyna Ostrowska

2018-05-01

Full Text Available The structural origin of absorption and fluorescence anisotropy of the single crystal of the π-conjugated heterocyclic system 5,6,10b-triazaacephenanthrylene, TAAP, is presented in this study. X-ray analysis shows that the crystal framework in the space group P\\overline{1} is formed by centrosymmetric dimers of face-to-face mutually oriented TAAP molecules joined by π–π non-covalent interactions. The conformation of the TAAP molecule is stabilized by intramolecular C—H...N(sp2, N(sp2H...π(CN, and C—H...O(sp2 hydrogen bonds. The presence of weak π–π interactions is confirmed by quantum theory of atoms in molecules (QTAIM and non-covalent interaction (NCI analysis. The analysis of the optical spectra of TAAP in solution and in the solid state does not allow the specification of the aggregation type. DFT calculations for the dimer in the gas phase indicate that the lowest singlet excitation is forbidden by symmetry, suggesting H-type aggregation, even though the overall absorption spectrum is bathochromically shifted as for the J-type. The experimental determination of the permanent dipole moment of a TAAP molecule in 1,4-dioxane solution indicates the presence of the monomer form. The calculated absorption and emission spectra of the crystal in a simple approximation are consistent with the experimentally determined orientation of the absorption and emission transition dipole moments in TAAP single crystals. The electrostatic interaction between monomers with a permanent dipole moment (ca 4 D each could result in the unusual spectroscopic JH-aggregate behaviour of the TAAP dimer.

Decoupling of magnetism and electric transport in single-crystal (Sr1‑x A x )2IrO4 (A  =  Ca or Ba)

Science.gov (United States)

Zhao, H. D.; Terzic, J.; Zheng, H.; Ni, Y. F.; Zhang, Y.; Ye, Feng; Schlottmann, P.; Cao, G.

2018-06-01

We report a systematical structural, transport and magnetic study of Ca or Ba doped Sr2IrO4 single crystals. Isoelectronically substituting Ca2+ (up to 15%) or Ba2+ (up to 4%) ion for the Sr2+ ion provides no additional charge carriers but effectively changes the lattice parameters in Sr2IrO4. In particular, 15% Ca doping considerably reduces the c-axis and the unit cell by nearly 0.45% and 1.00%, respectively. These significant, anisotropic compressions in the lattice parameters conspicuously cause no change in the Néel temperature which remains at 240 K, but drastically reduces the electrical resistivity by up to five orders of magnitude or even precipitates a sharp insulator-to-metal transition at lower temperatures, i.e. the vanishing insulating state accompanies an unchanged Néel temperature in (Sr1‑x A x )2IrO4. This observation brings to light an intriguing difference between chemical pressure and applied pressure, the latter of which does suppress the long-range magnetic order in Sr2IrO4. This difference reveals the importance of the Ir1–O2–Ir1 bond angle and homogenous volume compression in determining the magnetic ground state. All results, along with a comparison drawn with results of Tb and La doped Sr2IrO4, underscore that the magnetic transition plays a nonessential role in the formation of the charge gap in the spin–orbit-tuned iridate.

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Energy Technology Data Exchange (ETDEWEB)

Rai, Chitharanjan, E-mail: raichitharanjan@gmail.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India); Kalpataru First Grade Science College, Tiptur 572 202 (India); Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dharmaprakash, S.M., E-mail: smdharma@yahoo.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India)

2009-11-15

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T{sub c}=51 deg. C (for pure TGS, T{sub c}=48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Anisotropy of single-crystal 3C–SiC during nanometric cutting

International Nuclear Information System (INIS)

Goel, Saurav; Stukowski, Alexander; Luo, Xichun; Agrawal, Anupam; Reuben, Robert L

2013-01-01

3C–SiC (the only polytype of SiC that resides in a diamond cubic lattice structure) is a relatively new material that exhibits most of the desirable engineering properties required for advanced electronic applications. The anisotropy exhibited by 3C–SiC during its nanometric cutting is significant, and the potential for its exploitation has yet to be fully investigated. This paper aims to understand the influence of crystal anisotropy of 3C–SiC on its cutting behaviour. A molecular dynamics simulation model was developed to simulate the nanometric cutting of single-crystal 3C–SiC in nine (9) distinct combinations of crystal orientations and cutting directions, i.e. (1 1 1) 〈−1 1 0〉, (1 1 1) 〈−2 1 1〉, (1 1 0) 〈−1 1 0〉, (1 1 0) 〈0 0 1〉, (1 1 0) 〈1 1 −2〉, (0 0 1) 〈−1 1 0〉, (0 0 1) 〈1 0 0〉, (1 1 −2) 〈1 −1 0〉 and (1 −2 0) 〈2 1 0〉. In order to ensure the reliability of the simulation results, two separate simulation trials were carried out with different machining parameters. In the first trial, a cutting tool rake angle of −25°, d/r (uncut chip thickness/cutting edge radius) ratio of 0.57 and cutting velocity of 10 m s −1 were used whereas a second trial was done using a cutting tool rake angle of −30°, d/r ratio of 1 and cutting velocity of 4 m s −1 . Both the trials showed similar anisotropic variation. The simulated orthogonal components of thrust force in 3C–SiC showed a variation of up to 45%, while the resultant cutting forces showed a variation of 37%. This suggests that 3C–SiC is highly anisotropic in its ease of deformation. These results corroborate with the experimentally observed anisotropic variation of 43.6% in Young's modulus of 3C–SiC. The recently developed dislocation extraction algorithm (DXA) [1, 2] was employed to detect the nucleation of dislocations in the MD simulations of varying cutting orientations

Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals

International Nuclear Information System (INIS)

Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.

2006-01-01

It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions

Tiberiobardiite, Cu9Al(SiO3OH2(OH12(H2O6(SO41.5·10H2O, a New Mineral Related to Chalcophyllite from the Cretaio Cu Prospect, Massa Marittima, Grosseto (Tuscany, Italy: Occurrence and Crystal Structure

Directory of Open Access Journals (Sweden)

Cristian Biagioni

2018-04-01

Full Text Available The new mineral species tiberiobardiite, ideally Cu9Al(SiO3OH2(OH12(H2O6(SO41.5·10H2O, has been discovered in the Cretaio Cu prospect, Massa Marittima, Grosseto, Tuscany, Italy, as very rare, light green, vitreous, tabular {0001}, pseudo-hexagonal crystals, up to 200 μm in size and 5 μm in thickness, associated with brochantite. Electron microprobe analysis gave (in wt %, average of 5 spot analyses: SO3 10.37, P2O5 3.41, As2O5 0.05, SiO2 8.13, Al2O3 5.54, Fe2O3 0.74, CuO 62.05, and ZnO 0.03, for a total of 90.32. Based on an idealized O content of 42 atoms per formula unit, assuming the presence of 16 H2O groups and 13.5 cations (without H, the empirical formula of tiberiobardiite is (Cu8.69Al0.21Fe0.10Σ9.00Al1.00(Si1.51P0.54Σ2.05S1.44O12.53(OH13.47·16H2O. The main diffraction lines, corresponding to multiple hkl indices, are [d in Å (relative visual intensity]: 9.4 (s, 4.67 (s, 2.576 (m, 2.330 (m, and 2.041 (mw. The crystal structure study revealed tiberiobardiite to be trigonal, space group R 3 ¯ , with unit-cell parameters a = 10.6860(4, c = 28.3239(10 Å, V = 2801.0(2 Å3, and Z = 3. The crystal structure was refined to a final R1 = 0.060 for 1747 reflections with Fo > 4σ (Fo and 99 refined parameters. Tiberiobardiite is the Si-analogue of chalcophyllite, with Si4+ replacing As5+ through the coupled substitution As5+ + O2− = Si4+ + (OH−. The name tiberiobardiite honors Tiberio Bardi (b. 1960 for his contribution to the study of the mineralogy of Tuscany.

Magnetic order of Nd5Pb3 single crystals

Science.gov (United States)

Yan, J.-Q.; Ochi, M.; Cao, H. B.; Saparov, B.; Cheng, J.-G.; Uwatoko, Y.; Arita, R.; Sales, B. C.; Mandrus, D. G.

2018-04-01

We report millimeter-sized Nd5Pb3 single crystals grown out of a Nd-Co flux. We experimentally study the magnetic order of Nd5Pb3 single crystals by measuring the anisotropic magnetic properties, electrical resistivity under high pressure up to 8 GPa, specific heat, and neutron single crystal diffraction. Two successive magnetic orders are observed at T N1  =  44 K and T N2  =  8 K. The magnetic cells can be described with a propagation vector k=(0.5, 0, 0) . Cooling below T N1, Nd1 and Nd3 order forming ferromagnetic stripes along the b-axis, and the ferromagnetic stripes are coupled antiferromagnetically along the a-axis for the k=(0.5, 0, 0) magnetic domain. Cooling below T N2, Nd2 orders antiferromagnetically to nearby Nd3 ions. All ordered moments align along the crystallographic c-axis. The magnetic order at T N1 is accompanied by a quick drop of electrical resistivity upon cooling and a lambda-type anomaly in the temperature dependence of specific heat. At T N2, no anomaly was observed in electrical resistivity but there is a weak feature in specific heat. The resistivity measurements under hydrostatic pressures up to 8 GPa suggest a possible phase transition around 6 GPa. Our first-principles band structure calculations show that Nd5Pb3 has the same electronic structure as does Y5Si3 which has been reported to be a one-dimensional electride with anionic electrons that do not belong to any atom. Our study suggests that R 5Pb3 (R  =  rare earth) can be a materials playground for the study of magnetic electrides. This deserves further study after experimental confirmation of the presence of anionic electrons.

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

Science.gov (United States)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-05-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values ( θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate ( θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

Science.gov (United States)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-04-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values (θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate (θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM

Crystal growth and dislocation etch pits observation of chalcopyrite CdSiP2

Science.gov (United States)

He, Zhiyu; Zhao, Beijun; Zhu, Shifu; Chen, Baojun; Huang, Wei; Lin, Li; Feng, Bo

2018-01-01

CdSiP2 is the only crystal that can offer Non-critical Phase Matching (NCPM) for a 1064 nm pumped optical parametric oscillation (OPO) with idler output in the 6 μm range. In this paper, a large, crack-free CdSiP2 single crystal measuring 18 mm in diameter and 65 mm in length was successfully grown by the Vertical Bridgman method (MVB) with an explosion-proof quartz ampoule. The results of lattice parameters, element composition and IR transmittance of the as-grown crystal characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDS) and Fourier transformation infrared spectrometer (FTIR) showed the as grown crystal crystallized well and the absorption coefficients at 4878 cm-1 and 2500 cm-1 were 0.14 cm-1 and 0.06 cm-1. Moreover, a new etchant composed of Br2, HCl, HNO3, CH3OH and H2O (1:800:800:400:400 in volume ratio) was prepared and the dislocation etch pits on oriented faces of as-grown CdSiP2 crystal were observed for the first time. It is found the etch pits are in rectangular structure on the (1 0 1) face, but in trigonal pyramid structure on (3 1 2) face. According to the quantities of the etch pits, the average densities of dislocation were evaluated to be 2.28 × 105/cm2 and 1.4 × 105/cm2, respectively.

Revision of the Li13Si4 structure.

Science.gov (United States)

Zeilinger, Michael; Fässler, Thomas F

2013-11-06

Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

Al{sub 4}SiC{sub 4} wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

Energy Technology Data Exchange (ETDEWEB)

Pedesseau, L., E-mail: laurent.pedesseau@insa-rennes.fr, E-mail: jacky.even@insa-rennes.fr; Even, J., E-mail: laurent.pedesseau@insa-rennes.fr, E-mail: jacky.even@insa-rennes.fr; Durand, O. [Fonctions Optiques pour les Technologies de l’Information, FOTON UMR 6082, CNRS, INSA de Rennes, 35708 Rennes (France); Modreanu, M. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Chaussende, D.; Sarigiannidou, E.; Chaix-Pluchery, O. [LMGP, CNRS, Université Grenoble Alpes, 38000 Grenoble (France)

2015-12-01

New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al{sub 4}SiC{sub 4}). A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al{sub 4}SiC{sub 4} material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al{sub 4}SiC{sub 4} material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

Structural variations and dielectric properties of (Bi1-xL ax ) 2Si O5 (0 ≤x ≤0.1 ): Polycrystallines synthesized by crystallization of Bi-Si-O and Bi-La-Si-O glasses

Science.gov (United States)

Taniguchi, Hiroki; Tatewaki, Shingo; Yasui, Shintaro; Fujii, Yasuhiro; Yamaura, Jun-ichi; Terasaki, Ichiro

2018-04-01

This paper focuses on effects of isovalent La substitution on the crystal structure and dielectric properties of ferroelectric B i2Si O5 . Polycrystalline samples of (Bi1-xL ax ) 2Si O5 are synthesized by crystallization of Bi-Si-O and Bi-La-Si-O glasses with a composition range of 0 ≤x ≤0.1 . The crystal structure changes from monoclinic to tetragonal with increasing La-substitution rate x at room temperature. This structural variation stems from the change in orientation of Si O4 tetrahedra that form one-dimensional chains when they are in the ordered configuration, thus suggesting that lone-pair electrons play an important role in sustaining one-dimensional chains of Si O4 tetrahedra. Synchronizing with the disordering of Si O4 chains, ferroelectric phase transition temperature of (Bi1-xL ax ) 2Si O5 sharply decreases as x increases, and ferroelectricity finally vanishes at around x =0.03 . The present results demonstrate that lone-pair electrons of Bi play an important role in the ferroelectricity of B i2Si O5 through propping the ordered structure of one-dimensional Si O4 chains with stereochemical activity. Furthermore, an additional phase transition has been first discovered in the low-temperature region of (Bi1-xL ax ) 2Si O5 with x ≤0.01 , where the ordered one-dimensional Si O4 chains remain.

Improved designs of Si-based quantum wells and Schottky diodes for IR detection

Energy Technology Data Exchange (ETDEWEB)

Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)

2016-08-31

Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

Improved designs of Si-based quantum wells and Schottky diodes for IR detection

International Nuclear Information System (INIS)

Moeen, M.; Kolahdouz, M.; Salemi, A.; Abedin, A.; Östling, M.; Radamson, H.H.

2016-01-01

Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10 20 cm −3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K 1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K 1/f = 4.7 × 10 −14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

Growth and physicochemical properties of second-order nonlinear optical 2-amino-5-chloropyridinium trichloroacetate single crystals

Science.gov (United States)

Renugadevi, R.; Kesavasamy, R.

2015-09-01

The growth of organic nonlinear optical (NLO) crystal 2-amino-5-chloropyridinium trichloroacetate (2A5CPTCA) has been synthesized and single crystals have been grown from methanol solvent by slow evaporation technique. The grown crystals were subjected to various characterization analyses in order to find out the suitability for device fabrication. Single crystal X-ray diffraction analysis reveals that 2A5CPTCA crystallizes in monoclinic system with the space group Cc. The grown crystal was further characterized by Fourier transform infrared spectral analysis to find out the functional groups. The nuclear magnetic resonance spectroscopy is a research technique that exploits the magnetic properties of certain atomic nuclei. The optical transparency window in the visible and near-IR (200--1100 nm) regions was found to be good for NLO applications. Thermogravimetric analysis and differential thermal analysis were used to study its thermal properties. The powder second harmonic generation efficiency measurement with Nd:YAG laser (1064 nm) radiation shows that the highest value when compared with the standard potassium dihydrogen phosphate crystal.

Revision of the Li13Si4 structure

Directory of Open Access Journals (Sweden)

Thomas F. Fässler

2013-12-01

Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

Crystal growth velocity in deeply undercooled Ni-Si alloys

Science.gov (United States)

Lü, Y. J.

2012-02-01

The crystal growth velocity of Ni95Si5 and Ni90Si10 alloys as a function of undercooling is investigated using molecular dynamics simulations. The modified imbedded atom method potential yields the equilibrium liquidus temperatures T L ≈ 1505 and 1387 K for Ni95Si5 and Ni90Si10 alloys, respectively. From the liquidus temperatures down to the deeply undercooled region, the crystal growth velocities of both the alloys rise to the maximum with increasing undercooling and then drop slowly, whereas the athermal growth process presented in elemental Ni is not observed in Ni-Si alloys. Instead, the undercooling dependence of the growth velocity can be well-described by the diffusion-limited model, furthermore, the activation energy associated with the diffusion from melt to interface increases as the concentration increases from 5 to 10 at.% Si, resulting in the remarkable decrease of growth velocity.

Heterogeneous nucleation of Mg2Si on Sr11Sb10 nucleus in Mg–x(3.5, 5 wt.%)Si–1Al alloys

International Nuclear Information System (INIS)

Wang, Hui-Yuan; Chen, Lei; Liu, Bo; Li, Xiao-Ran; Wang, Jin-Guo; Jiang, Qi-Chuan

2012-01-01

After combined additions of Sr and Sb, most primary Mg 2 Si crystals in Mg–3.5Si–1Al and Mg–5Si–1Al alloys transformed from equiaxed-dendritic shapes to octahedral morphologies; while eutectic phases also changed from Chinese script to short rod-shapes. The mechanisms of complex modification of Sr and Sb were attributed to the heterogeneous nucleation of primary Mg 2 Si on Sr 11 Sb 10 nucleus, together with change in growth manners caused by incorporation of Sb in Mg 2 Si crystals. -- Highlights: ► The Sr 11 Sb 10 is the heterogeneous nucleation of primary Mg 2 Si in Mg–3.5Si–1Al alloys. ► Some Sb atoms were incorporated by substituting Si which changed growth manners of primary Mg 2 Si. ► Primary Mg 2 Si transformed from equiaxed-dendritic to octahedral after modification. ► Eutectic phases changed from Chinese script to short rod-shapes after modification.

Study of structural and optical properties of YAG and Nd:YAG single crystals

Energy Technology Data Exchange (ETDEWEB)

Kostić, S. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Lazarević, Z.Ž., E-mail: lzorica@yahoo.com [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Radojević, V. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia); Milutinović, A.; Romčević, M.; Romčević, N.Ž. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Valčić, A. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia)

2015-03-15

Highlights: • Transparent YAG and pale pink Nd:YAG single crystals were produced by the Czochralski technique. • Growth mechanisms and shape of the liquid/solid interface and incorporation of Nd{sup 3+} were studied. • The structure of the crystals was investigated by X-ray diffraction, Raman and IR spectroscopy. • The 15 Raman and 17 IR modes were observed. • The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. - Abstract: Yttrium aluminum garnet (YAG, Y{sub 3}Al{sub 5}O{sub 12}) and yttrium aluminum garnet doped with neodymium (Nd:YAG) single crystals were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. As a result of our experiments, the transparent YAG and pale pink Nd:YAG single crystals were produced. The obtained crystals were studied by X-ray diffraction, Raman and IR spectroscopy. The crystal structure was confirmed by XRD. The 15 Raman and 17 IR modes were observed. The Raman and IR spectroscopy results are in accordance with X-ray diffraction analysis. The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. The absence of a core was confirmed by viewing polished crystal slices. Also, it is important to emphasize that the obtained Nd:YAG single crystal has a concentration of 0.8 wt.% Nd{sup 3+} that is characteristic for laser materials.

Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

2013-01-01

0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

Hydrothermal growth of PbSO4 (Anglesite) single crystal

International Nuclear Information System (INIS)

Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi

1994-01-01

Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)

Phase composition of iron-rich R-Fe-Si (R=Dy, Ho, Er) alloys

International Nuclear Information System (INIS)

Ivanova, G.V.; Makarova, G.M.; Shcherbakova, E.V.; Belozerov, E.V.

2005-01-01

Phase composition is studied in iron-rich alloys of R-Fe-Si (R=Dy, Ho, Er). In the as-cast state R 2 (Fe, Si) 17 of type Th 2 Ni 17 and R(Fe, Si) 12 compounds are observed; in the alloys of rated composition of R(Fe 0.85 Si 0.15 ) 8.5 (R=Dy, Er) a compound R 2 (Fe, Si) 17 of Th 2 Zn 17 -type is revealed as well. The annealing at 1273 K results in formation of Dy 3 (Fe, Si) 29 and also the compounds with the presumed composition of Dy 4 (Fe, Si) 41 and Ho 4 (Fe, Si) 41 . As this takes place the alloys contain a transition structure as well that represents a set of small-sized areas with various type short-range order in mutual displacement of Fe-Fe(Si) dumpbell chains. The process of phase formation at 1273 K is faced with difficulties. Even the annealing for 1000 h does not result in the state of equilibrium [ru

Bulk crystal growth and their effective third order nonlinear optical properties of 2-(4-fluorobenzylidene) malononitrile (FBM) single crystal

Science.gov (United States)

Priyadharshini, A.; Kalainathan, S.

2018-04-01

2-(4-fluorobenzylidene) malononitrile (FBM), an organic third order nonlinear (TONLO) single crystal with the dimensions of 32 × 7 × 11 mm3, has been successfully grown in acetone solution by slow evaporation technique at 35 °C. The crystal system (triclinic), space group (P-1) and crystalline purity of the titular crystal were measured by single crystal and powder X-ray diffraction, respectively. The molecular weight and the multiple functional groups of the FBM material were confirmed through the mass and FT-IR spectral analysis. UV-Vis-NIR spectral study enroles that the FBM crystal exhibits excellent transparency (83%) in the entire visible and near infra-red region with a wide bandgap 2.90 eV. The low dielectric constant (εr) value of FBM crystal is appreciable for microelectronics industry applications. Thermal stability and melting point (130.09 °C) were ascertained by TGA-DSC analysis. The laser-induced surface damage threshold (LDT) value of FBM specimen is found to be 2.14 GW/cm2, it is fairly good compared to other reported NLO crystals. The third - order nonlinear optical character of the FBM crystal was confirmed through the typical single beam Z-scan technique. All these finding authorized that the organic crystal of FBM is favorably suitable for NLO applications.

Single-Crystal-to-Single-Crystal Anion Exchange in a Gadolinium MOF: Incorporation of POMs and [AuCl4]−

Directory of Open Access Journals (Sweden)

Javier López-Cabrelles

2016-04-01

Full Text Available The encapsulation of functional molecules inside porous coordination polymers (also known as metal-organic frameworks, MOFs has become of great interest in recent years at the field of multifunctional materials. In this article, we present a study of the effects of size and charge in the anion exchange process of a Gd based MOF, involving molecular species like polyoxometalates (POMs, and [AuCl4]−. This post-synthetic modification has been characterized by IR, EDAX, and single crystal diffraction, which have provided unequivocal evidence of the location of the anion molecules in the framework.

Crystal Growth of Ca3Nb(Ga1−xAlx3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

Directory of Open Access Journals (Sweden)

Yuui Yokota

2015-08-01

Full Text Available Ca3Nb(Ga1−xAlx3Si2O14 (CNGAS single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

Energy Technology Data Exchange (ETDEWEB)

Yarema, Maksym [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Swiss Federal Laboratories for Materials Science and Technology (EMPA), Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Zaremba, Oksana; Gladyshevskii, Roman [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F. [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-12-15

The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800

Hyperfine interactions and electric dipole moments in the [16.0]1.5(v = 6), [16.0]3.5(v = 7), and X2Δ(5/2) states of iridium monosilicide, IrSi.

Science.gov (United States)

Le, Anh; Steimle, Timothy C; Morse, Michael D; Garcia, Maria A; Cheng, Lan; Stanton, John F

2013-12-19

The (6,0)[16.0]1.5-X(2)Δ(5/2) and (7,0)[16.0]3.5-X(2)Δ(5/2) bands of IrSi have been recorded using high-resolution laser-induced fluorescence spectroscopy. The field-free spectra of the (191)IrSi and (193)IrSi isotopologues were modeled to generate a set of fine, magnetic hyperfine, and nuclear quadrupole hyperfine parameters for the X(2)Δ(5/2)(v = 0), [16.0]1.5(v = 6), and [16.0]3.5 (v = 7) states. The observed optical Stark shifts for the (193)IrSi and (191)IrSi isotopologues were analyzed to produce the permanent electric dipole moments, μ(el), of -0.414(6) D and 0.782(6) D for the X(2)Δ(5/2) and [16.0]1.5 (v = 6) states, respectively. Properties of the X(2)Δ(5/2) state computed using relativistic coupled-cluster methods clearly indicate that electron correlation plays an essential role. Specifically, inclusion of correlation changes the sign of the dipole moment and is essential for achieving good accuracy for the nuclear quadrupole coupling parameter eQq0.

Chlorellestadite, Ca5(SiO4)1.5(SO4)1.5Cl, a new ellestadite- group mineral from the Shadil-Khokh volcano, South Ossetia

Science.gov (United States)

Środek, Dorota; Galuskina, Irina O.; Galuskin, Evgeny; Dulski, Mateusz; Książek, Maria; Kusz, Joachim; Gazeev, Viktor

2018-05-01

Chlorellestadite (IMA2017-013), ideally Ca5(SiO4)1.5(SO4)1.5Cl, the Cl-end member of the ellestadite group was discovered in a calcium-silicate xenolith in rhyodacite lava from the Shadil Khokh volcano, Greater Caucasus, South Ossetia. Chlorellestadite forms white, tinged with blue or green, elongate crystals up to 0.2-0.3 mm in length. Associated minerals include spurrite, larnite, chlormayenite, rondorfite, srebrodolskite, jasmundite and oldhamite. The empirical crystal chemical formula of the holotype specimen is Ca4.99Na0.01(SiO4)1.51(SO4)1.46(PO4)0.03(Cl0.61OH0.21F0.11)Σ0.93. Unit-cell parameters of chlorellestadite are: P63/m, a = 9.6002(2), c = 6.8692(2) Å, V = 548.27(3)Å3, Z = 2. Chlorellestadite has a Mohs hardness of 4-4.5 and a calculated density of 3.091 g/cm3. The cleavage is indistinct, and the mineral shows irregular fracture. The Raman spectrum of chlorellestadite is similar to the spectra of other ellestadite group minerals, with main bands located at 267 cm-1 (Ca-O vibrations), and between 471 and 630 cm-1 (SiO4 4- and SO4 2- bending vibrations) and 850-1150 cm-1 (SiO4 4- and SO4 2- stretching modes). Chlorellestadite forms in xenoliths of calcium-silicate composition when they are exposed to Cl-bearing volcanic exhalations at about 1000 °C under low pressure conditions.

Crystal growth, morphology, thermal and spectral studies of an organosulfur nonlinear optical bis(guanidinium) 5-sulfosalicylate (BG5SS) single crystals

Science.gov (United States)

Dhavamurthy, M.; Peramaiyan, G.; Babu, K. Syed Suresh; Mohan, R.

2015-04-01

Organosulfur nonlinear optical single crystals of orthorhombic bis(guanidinium) 5-sulfosalicylate (2CH6N3 +·C7H4O6S2-·H2O) with dimension 14 mm × 4 mm × 5 mm have been grown from methanol and water solvents in 1:1 ratio by the slow evaporation growth technique. The crystal structure and morphology of the crystals have been studied by single-crystal X-ray diffraction. FTIR spectroscopic studies were carried out to identify the functional groups and vibrational modes present in the grown crystals. The UV-Vis spectrum was studied to analyze the linear optical properties of the grown crystals. The thermal gravimetric analysis was conducted on the grown crystals, and the result revealed that the grown crystal is thermally stable up to 65 °C. The dielectric tensor components ɛ 11, ɛ 22 and ɛ 33 of BG5SS crystal were evaluated as a function of frequency at 40 °C. The surface laser damage threshold for the grown crystal was measured using Nd:YAG laser. Further, Vickers micro-hardness study was carried out to analyze the mechanical strength of the grown crystals for various loads.

Blue luminescence in Tm3+-doped KGd(WO4)2 single crystals

International Nuclear Information System (INIS)

Gueell, F.; Mateos, X.; Gavalda, Jna.; Sole, R.; Aguilo, M.; Diaz, F.; Massons, J.

2004-01-01

Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO 4 ) 2 single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO 4 ) 2 single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the 3 F 2 + 3 F 3 energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the 3 H 6 ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength

Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals

Energy Technology Data Exchange (ETDEWEB)

Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H

1997-07-01

The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

Temperature effect on phase states of quartz nano-crystals in silicon single crystal

International Nuclear Information System (INIS)

Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

2006-01-01

Full text: Oxygen penetrates into the silicon lattice up to the concentration of 2·10 18 cm -3 in the course of growing [1]. By the author's opinion at a low oxygen content the formation of solid solution is possible in the local defect places of the silicon single crystal lattice due to the difference in effective ion radius of oxygen and silicon (r O 0.176 and r Si = 0.065 nm). Upon reaching some critical content (∼ 10 17 cm -3 ), it becomes favorable energetically for oxygen ions to form precipitates (SiO x ) and finally a dielectric layer (stoichiometric inclusions of SiO 2 ). It was shown later that depending on the growth conditions, indeed the quartz crystal inclusions are formed in the silicon single crystals at an amount of 0.3 /0.5 wt. % [2]. However the authors did not study a phase state of the quartz inclusions. Therefore the aim of this work was to study a phase state of the quartz inclusions in silicon crystal at various temperatures. We examined the silicon single crystals grown by Czochralski technique, which were cut in (111) plane in the form of disk of 20 mm diameter and 1.5 thickness and had hole conductivity with the specific resistance ρ o ≅ 1/10 Ohm cm. The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N 0 ≅ 2/ 4·10 17 cm -3 and N B ≅ 3*10 15 cm -3 . Structure was analyzed at the set-up DRON-UM1 with high temperature supply UVD-2000 ( CuK = 0.1542 nm) at the temperatures of 300, 1173 and 1573 K measured with platinum-platinum-rhodium thermocouple. The high temperature diffraction spectrum measured at 1573 K in the angle range (2Θ≅10/70 d egree ) there is only one main structure reflection (111) with a high intensity and d/n ≅ 0.3136 nm (2 Θ≅ 28.5 d egree ) from the matrix lattice of silicon single crystal. The weak line at 2 Θ≅ 25.5 d egree ( d/n≅0.3136 nm) is β component of the main reflection (111), and the weak structure peak at 2Θ≅59 d egree ( d/n≅ 0.1568 nm

Energetic mid-IR femtosecond pulse generation by self-defocusing soliton-induced dispersive waves in a bulk quadratic nonlinear crystal

DEFF Research Database (Denmark)

Zhou, Binbin; Guo, Hairun; Bache, Morten

2015-01-01

Generating energetic femtosecond mid-IR pulses is crucial for ultrafast spectroscopy, and currently relies on parametric processes that, while efficient, are also complex. Here we experimentally show a simple alternative that uses a single pump wavelength without any pump synchronization and with...... by using large-aperture crystals. The technique can readily be implemented with other crystals and laser wavelengths, and can therefore potentially replace current ultrafast frequency-conversion processes to the mid-IR....... and without critical phase-matching requirements. Pumping a bulk quadratic nonlinear crystal (unpoled LiNbO3 cut for noncritical phase-mismatched interaction) with sub-mJ near-IR 50-fs pulses, tunable and broadband (∼ 1,000 cm−1) mid-IR pulses around 3.0 μm are generated with excellent spatio-temporal pulse...... quality, having up to 10.5 μJ energy (6.3% conversion). The mid-IR pulses are dispersive waves phase-matched to near-IR self-defocusing solitons created by the induced self-defocusing cascaded nonlinearity. This process is filament-free and the input pulse energy can therefore be scaled arbitrarily...

Upconversion luminescence of Er3+/Yb3+ doped Sr5(PO4)3OH phosphor powders

Science.gov (United States)

Mokoena, P. P.; Swart, H. C.; Ntwaeaborwa, O. M.

2018-04-01

Sr5(PO4)3OH co-doped with Er3+and Yb3+ powder phosphors were synthesized by urea combustion method. The crystal structure was analyzed using X-ray diffraction (XRD). Particle morphology was analyzed using a Jeol JSM 7800F thermal field emission scanning electron microscope (FE-SEM) and the chemical composition analysis was carried out using an Oxford Instruments AzTEC energy dispersive spectrometer (EDS) attached to the FE-SEM. Upconversion emission was measured by using a FLS980 Spectrometer equipped with a 980 nm NIR laser as the excitation source, and a photomultiplier (PMT) detector. The XRD data of the Sr5(PO4)3OH powder exhibited characteristic diffraction patterns of the hexagonal structure referenced in the standard JCPDS card number 00-033-1348. The sharp peaks revealed the formation of crystalline Sr5(PO4)3OH. The powders were made up of hexagonal nanospheres. The enhanced red emission due to the 4F9/2 → 4I15/2 transitions of Er3+ was observed and was attributed to up conversion (UC) energy transfer from Yb3+. The upconversion energy transfer mechanism from Yb3+ to Er3+ is discussed.

Hydrothermal synthesis and structural analysis of new mixed oxyanion borates: Ba11B26O44(PO4)2(OH)6, Li9BaB15O27(CO3) and Ba3Si2B6O16

Science.gov (United States)

Heyward, Carla; McMillen, Colin D.; Kolis, Joseph

2013-07-01

Several new borate compounds, Ba11B26O44(PO4)2(OH)6 (1), Li9BaB15O27(CO3) (2), and Ba3Si2B6O16 (3) were synthesized containing other hetero-oxyanion building blocks in addition to the borate frameworks. They were all prepared under hydrothermal conditions and characterized by single crystal and powder X-ray diffraction, and IR spectroscopy. Crystal data: For 1; space group P21/c, a=6.8909 (14) Å, b=13.629 (3) Å, c=25.851 (5) Å, β=90.04 (3)°; For 2; space group P-31c, a=8.8599 (13) Å, c=15.148 (3) Å; For 3; space group P-1, a=5.0414 (10) Å, b=7.5602 (15) Å, c=8.5374 (17) Å, α=77.15 (3)°, β=77.84 (3)°, γ=87.41 (3)° for 3. Compounds 1 and 2 contain isolated oxyanions [PO4]3- and [CO3]2- respectively, sitting in channels created by the borate framework, while structure 3 has the [SiO4]4- groups directly bonded to the borate groups creating a B-O-Si framework.

Tuning crystal field symmetry of hexagonal NaY0.92Yb0.05Er0.03F4 by Ti4+ codoping for high-performance upconversion

International Nuclear Information System (INIS)

Yu, Han; Huang, Qingming; Ma, En; Zhang, Xinqi; Yu, Jianchang

2014-01-01

Highlights: • Upconversion emission of Er 3+ was obviously enhanced by Ti 4+ codoped in NaYF 4 . • The upconversion luminescence lifetime was also obviously prolonged. • Na + could be induced to occupy Y 3+ sites if Ti 4+ was codoped with appropriate concentration. • The crystal field asymmetry was enhanced for better upconversion performance. • Crystal growth was prevented and small-sized NaYF 4 were obtained. - Abstract: 378 nm, 408 nm and 521 nm upconversion emissions of Er 3+ ions were obviously enhanced by Ti 4+ codoped with Yb 3+ /Er 3+ in hexagonal NaYF 4 , and the corresponding upconversion luminescence lifetimes were also prolonged, especially for 378 nm and 408 nm emissions. X-ray powder diffraction, field emission scanning electron microscope, transmission electron microscope, X-ray photoelectron spectroscopy and upconversion emission spectra were employed to explore the relationships of the structure and properties. From these characterizations we made a novel discovery that Na + could be induced to occupy Y 3+ sites for establishing valence balance of the system if Ti 4+ ions were codoped with appropriate concentration. As a result the crystal field asymmetry of NaY 0.92 Yb 0.05 Er 0.03 F 4 was enhanced and then its upconversion properties were improved because the hypersensitive electron transition of Yb 3+ /Er 3+ ions was promoted greatly. At the same time, the crystal sizes of the codoped NaYF 4 became smaller because the crystal growth was prevented by more negative charges gathering at the crystal surface. This study provides an exploration of the relationship among impurity doping, structural changes and upconversion performance, which may be useful for design and synthesis of high-performance upconversion codoping materials

Nd{sub 39}Ir{sub 10.98}In{sub 36.02}. A complex intergrowth structure with CsCl- and AlB{sub 2}-related slabs

Energy Technology Data Exchange (ETDEWEB)

Dominyuk, Nataliya; Zaremba, Vasyl' I. [Ivan Franko National Univ., Lviv (Ukraine). Dept. of Inorganic Chemistry; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2015-11-01

The ternary indide Nd{sub 39}Ir{sub 10.98}In{sub 36.02} was synthesized by arc-melting and characterized by single crystal X-ray diffraction. Nd{sub 39}Ir{sub 10.98}In{sub 36.02} crystallizes with a new structure type: Pearson code oP172, Pbam, a = 3175.4(6), b = 3762.5(8), c = 378.02(8) pm, wR2 = 0.0828, 5544 F{sup 2} values, and 262 variables. Although the structure contains 44 crystallographically independent sites, it can easily be explained as an intergrowth structure of CsCl and AlB{sub 2} related slabs. The larger indium atoms fill all distorted CsCl slabs. The trigonal prismatic (AlB{sub 2}) slabs have no uniform size. The larger ones are filled by indium and the smaller ones by the iridium atoms. Additionally, one trigonal prism shows a mixed occupancy by indium and iridium. The crystal chemistry of Nd{sub 39}Ir{sub 10.98}In{sub 36.02} is discussed in the context of other intergrowth structures with the same simple slabs.

Structural and thermodynamic similarities of phases in the Li-Tt (Tt = Si, Ge) systems: redetermination of the lithium-rich side of the Li-Ge phase diagram and crystal structures of Li17Si4.0-xGex for x = 2.3, 3.1, 3.5, and 4 as well as Li4.1Ge.

Science.gov (United States)

Zeilinger, Michael; Fässler, Thomas F

2014-10-28

A reinvestigation of the lithium-rich section of the Li-Ge phase diagram reveals the existence of two new phases, Li17Ge4 and Li4.10Ge (Li16.38Ge4). Their structures are determined by X-ray diffraction experiments of large single crystals obtained from equilibrated melts with compositions Li95Ge5 and Li85Ge15. Excess melt is subsequently removed through isothermal centrifugation at 400 °C and 530 °C, respectively. Li17Ge4 crystallizes in the space group F4[combining macron]3m (a = 18.8521(3) Å, V = 6700.1(2) Å(3), Z = 20, T = 298 K) and Li4.10Ge (Li16.38Ge4) in Cmcm (a = 4.5511(2) Å, b = 22.0862(7) Å, c = 13.2751(4) Å, V = 1334.37(8) Å(3), Z = 16, T = 123 K). Both phases are isotypic with their Si counterparts and are further representative of the Li17Pb4 and Li4.11Si structure types. Additionally, the solid solutions Li17Si4-xGex follows Vegard's law. A comparison of the GeLin coordination polyhedra shows that isolated Ge atoms are 13- and 14-coordinated in Li17Ge4, whereas in Li16.38Ge4 the Ge atoms possess coordination numbers 12 and 13. Regarding the thermodynamic stability, Li16.38Ge4 is assigned a high-temperature phase existing between ∼400 °C and 627 °C, whereas Li17Ge4 decomposes peritectically at 520-522 °C. Additionally, the decomposition of Li16.38Ge4 below ∼400 °C was found to be very sluggish. These findings are manifested by differential scanning calorimetry, long-term annealing experiments and the results from melt equilibration experiments. Interestingly, the thermodynamic properties of the lithium-rich tetrelides Li17Tt4 and Li4.1Tt (Li16.4Tt4) are very similar (Tt = Si, Ge). Besides Li15Tt4, Li14Tt6, Li12Tt7, and LiTt, the title compounds are further examples of isotypic tetrelides in the systems Li-Tt.

Tetraammineplatinum(II) aquapentachloroiridate(III) dihydrate, [Pt(NH3)4][IrCl5(H2O)