Electronic structure study of Co doped CeO2 nanoparticles using X-ray absorption fine structure spectroscopy

International Nuclear Information System (INIS)

Kumar, Shalendra; Gautam, Sanjeev; Song, T.K.; Chae, Keun Hwa; Jang, K.W.; Kim, S.S.

2014-01-01

Highlights: • The electronic structural of Co–CeO 2 nanoparticles is investigated using XAFS. • Ce M 5,4 , Ce L 3 and O K edge NEXAFS reveal that the Ce-ions are in +4 valence state. • The NEXAFS spectrum performed at Co L3,2-edge confirms Co-ion in 2+ state. • The EXAFS analysis also show that Co ions are occupying Ce position in doped CeO 2 . • The distances between Ce–O and Ce–Ce/Co in all shells decreases with Co doping. - Abstract: We investigated the electronic structure of well characterized Co doped CeO 2 nanoparticles using X-ray absorption fine structure (XAFS) spectroscopy. Near edge X-ray absorption fine structure (NEXAFS) spectra at Ce M 5,4 , Ce L 3 and O K-edge conclude that the Ce-ions are in +4 valence state in pure as well as in Co doped CeO 2 nanoparticles. The local structure around Ce-atom in Co doped CeO 2 nanoparticles was also determined using extended X-ray absorption fine structure (EXAFS) spectroscopy at Ce L 3 edge. The EXAFS analysis suggest that the inter-atomic distance of Ce–O, Ce–Ce/Co decreases with Co doping, which indicate a contraction of the lattice. The decease in Ce–O distance also reflect that there is a formation of oxygen vacancies in CeO 2 matrix. The Debye–Waller factor also shows the consistent behaviour for all the coordination shells. The atomic multiplet calculations for Co L 3,2 -edge was performed to determine the valence state, symmetry and field splitting, which reflect that Co-ions are in 2+ state and substituted at Ce-site with crystal field splitting of 10Dq=-0.57eV. The XAFS measurements reveal that the Co-ions occupy the Ce position in the CeO 2 host matrix and create a oxygen vacancy

A comparative study of the magnetization in transition metal ion doped CeO2, TiO2 and SnO2 nanoparticles

Science.gov (United States)

Apostolov, A. T.; Apostolova, I. N.; Wesselinowa, J. M.

2018-05-01

Using the microscopic s-d model taking into account anharmonic spin-phonon interactions we have studied the magnetic properties of Co and Cu ion doped CeO2 and TiO2 nanoparticles and compared them with those of SnO2. By Co-doping there is a maximum in the magnetization M(x) curve for all nanoparticles observed in the most transition metal doped ones. The s-d interaction plays an important role by the decrease of M at higher dopant concentration. We have discussed the magnetization in dependence of different model parameters. By small Cu-ion doping there are some differences. In CeO2M decreases with the Cu-concentration, whereas in TiO2 and SnO2M increases. For higher Cu dopant concentrations M(X) decreases in TiO2 nanoparticles. We obtain room temperature ferromagnetism also in Zn doped CeO2, TiO2 and SnO2 nanoparticles, i.e. in non-transition metal ion doped ones. The different behavior of M in Co and Cu doped nanoparticles is due to a combination effect of multivalent metal ions, oxygen vacancies, different radius of cation dopants, connection between lattice and magnetism, as well as competition between the s-d and d-d ferromagnetic or antiferromagnetic interactions.

Inhibition of Neuroblastoma cancer cells viability by ferromagnetic Mn doped CeO_2 monodisperse nanoparticles mediated through reactive oxygen species

International Nuclear Information System (INIS)

Abbas, Fazal; Jan, Tariq; Iqbal, Javed; Haider Naqvi, M. Sajjad; Ahmad, Ishaq

2016-01-01

Here we report the Mn doping induced effects on structural, Raman, optical, magnetic and anticancer properties of CeO_2 nanoparticles prepared via soft chemical route. Structural and microstructural results infer that the synthesized nanoparticles have single phase cubic fluorite structure of CeO_2 and that Mn doping results in enhancement of the structural defects. Scanning electron microscopy results reveal the formation of monodisperse nanoparticles having average particle size ranging from 30 to 41 nm. The optical absorbance spectroscopy analysis discloses the band gap energy tailoring of CeO_2 nanoparticles via Mn doping. Room temperature ferromagnetism (RTFM) has been found in both as-prepared and Mn doped CeO_2 nanoparticles. This RTFM of the synthesized nanoparticles have been attributed to the Mn ions and surface defects such as oxygen vacancies. Finally, the influence of Mn dopant on the cell viability and reactive oxygen species (ROS) generation levels of CeO_2 nanoparticles in the presence of healthy and cancerous cells have been studied. It has been observed that the differential cytotoxicity of the synthesized nanoparticles is strongly correlated with level of ROS generation. - Highlights: • Mn doped CeO_2 nanoparticles with cubic fluorite structure were synthesized. • Mn dopant significantly tailored the band gap of CeO_2 nanoparticles. • The synthesized nanoparticles exhibited room temperature ferromagnetic behavior. • The cytotoxicity of these nanoparticles was reported for the first time. • The synthesized nanoparticles exhibited differential cytotoxicity.

Room-temperature synthesis and characterization of porous CeO2 thin films

International Nuclear Information System (INIS)

Chu, Dewei; Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi

2012-01-01

CeO 2 thin films with hexagonal-shaped pores were successfully prepared by a facile electrodeposition at room temperature combined with an etching process. By using electrodeposited ZnO nanorods as a soft template, the morphology, and microstructure of the CeO 2 could be controlled. TEM observation indicated that as-prepared CeO 2 film is composed of nanocrystals with average size of several nanometers, while XPS analysis showed the coexistence of Ce 3+ and Ce 4+ in the film. The photoluminescence properties of CeO 2 films were measured, which showed much higher sensitivity compared to bare substrate. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Er{sup 3+}-doped fluorotellurite thin film glasses with improved photoluminescence emission at 1.53 µm

Energy Technology Data Exchange (ETDEWEB)

Morea, R. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Fernandez, T.T. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Maté, B. [Instituto de Estructura de la Materia, CSIC, Serrano 121, 28006 Madrid (Spain); Ferrer, F.J. [Centro Nacional de Aceleradores, Univ. Sevilla-CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Maffiotte, C. [CIEMAT, Departamento de Tecnología, Av. Complutense 40, 28040 Madrid (Spain); Fernandez, J.; Balda, R. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Gonzalo, J., E-mail: j.gonzalo@csic.es [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain)

2016-02-15

Transparent oxyfluoride tellurite thin film glasses have been produced at room temperature by pulsed laser deposition in O{sub 2} atmosphere from an Er-doped TeO{sub 2}–ZnO–ZnF{sub 2} bulk glass. Thin film glasses present high refractive index (n≥1.95) and good transparency (T≥80%) in the visible (λ>400 nm) and near infrared range. However, their photoluminescence (PL) performance at 1.5 μm is poor. Thermal annealing at moderate temperatures (T≤315 °C), well below glass crystallization, increases the PL intensity by more than one order of magnitude as well as the PL lifetime up to τ≈3.3 ms. Film glasses present a larger fraction of TeO{sub 3} trigonal pyramids than the bulk glass and a very large OH{sup −} content. The structure and composition of film glasses do not change upon annealing and thus the activation of the PL response is related to the improvement of the surface morphology and the significant decrease of their OH{sup −} content. - Highlights: • Transparent Er-doped fluorotellurite films are produced by pulsed laser deposition. • Post-deposition thermal treatments are required to activate Er{sup 3+} photoluminescence. • {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} emission spectrum is similar for bulk and annealed film glasses. • {sup 4}I{sub 13/2} level fluorescence decay is shorter in annealed films than in bulk glasses. • Photoluminescence response relates to hydroxyl groups concentration in film glasses.

Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO_2 thin films

International Nuclear Information System (INIS)

Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

2016-01-01

Highlights: • Ni-CeO_2 thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO_2 thin films. • XPS spectra confirmed Ni ions were present in the doped CeO_2 thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO_2 films were confirmed through VSM. - Abstract: Ni-doped CeO_2 thin films were prepared under Ar"+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO_2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO_2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO_2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO_2. XPS results confirm the presence of Ni_2_p, O_1_s and Ce and depict that cerium is present as both Ce"4"+ and Ce"3"+ oxidation states in Ce_1_−_xNi_xO_2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO_2, while a ferromagnetic behavior appeared when Ni is doped in CeO_2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

Tunable flux pinning landscapes achieved by functional ferromagnetic Fe2O3:CeO2 vertically aligned nanocomposites in YBa2Cu3O7−δ thin films

International Nuclear Information System (INIS)

Tsai, Chen-Fong; Huang, Jijie; Lee, Joon-Hwan; Khatkhatay, Fauzia; Chen, Li; Chen, Aiping; Su, Qing; Wang, Haiyan

2015-01-01

Highlights: • Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposites (VAN). • An ordered arrangement of ferromagnetic Fe 2 O 3 nanoinclusions. • Significant in-field improvement of J c (H//c) in both VAN nanolayer capped and buffered samples. • T c above 90 K and the J c sf maximized at 3.07 MA/cm 2 (75 K) and 9.2 MA/cm 2 (65 K) for 30% Fe 2 O 3 sample. - Abstract: Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposite (VAN) layers were deposited as either buffer or cap layers for YBa 2 Cu 3 O 7−δ (YBCO) thin films. The composition of Fe 2 O 3 dopants in the VAN nanolayers is controlled at 10%, 30% and 50% in order to create different arrangements of Fe 2 O 3 and CeO 2 nanopillars and therefore to tune the flux pining landscapes. The composition variation provides tunable and ordered arrangements of magnetic nanodopants and interfacial defects as pinning centers in the YBCO thin films. The superconducting property measurements show that most doped samples obtain a T c above 90 K and the J c sf measured at 75 K and 65 K maximized at 3.07 MA/cm 2 and 9.2 MA/cm 2 for 30% Fe 2 O 3 VAN doped sample. As the temperature decreased to 5 K, the sample with 50% Fe 2 O 3 VAN doped sample show the best pinning effect due to pronounced magnetic pinning effects. This work demonstrates the tunable density of magnetic pinning centers can be achieved by VAN to meet the specific pinning requirement

Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO{sub 2}:Er doped with Si-nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Wojdak, M., E-mail: m.wojdak@ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Jayatilleka, H. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario, Canada M5S 3G4 (Canada); Shah, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Kenyon, A.J., E-mail: t.kenyon@ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Gourbilleau, F.; Rizk, R. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Université de Caen, 14050 CAEN cedex (France)

2013-04-15

During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO{sub 2}:Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate. -- Highlights: ► We studied photoluminescence of Er in SiO{sub 2} thin films doped with Si nanoclusters. ► Presence of ITO layer on the top enhances photoluminescence decay rate of Er. ► The effect depends on the thickness of active film. ► Radiative rate change in proximity of ITO layer was calculated theoretically. ► The calculation results are compared with the experiment and discussed.

Optical characterization of hydrogen-free CeO2 doped DLC films deposited by unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Zhang Zhenyu; Zhou Hongxiu; Guo Dongming; Gao Hang; Kang Renke

2008-01-01

A novel kind of hydrogen-free CeO 2 doped diamond-like carbon (DLC) films with thickness of 180-200 nm were deposited on silicon by unbalanced magnetron sputtering. Reduced reflectance and increased lifetime are expected with respect to pure DLC films, making these coatings good candidates as optical protective coatings for IR windows and solar cells. X-ray photoelectron spectroscopy confirms that CeO 2 is formed within the DLC films. Auger electron spectroscopy exhibits that the C, O, and Ce elements distribute uniformly across the film thickness, and C element diffuses into the Si substrate at the interface between the substrate and film. AFM shows that nanoparticles with diameter of around 50 nm are formed on the surface of deposited films, whose surface roughness is in the range of 1.3-2.3 nm. Raman spectra show the CeO 2 doped DLC films are amorphous DLC films, and both the G frequency and relative intensity ratio I D /I G are higher than those of pure DLC films. The photoluminescence of CeO 2 doped DLC films is obviously more intense than that of a pure DLC film, which indicates a promising potential as optical protective films for solar cells and IR window

Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

Science.gov (United States)

Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

2017-09-01

Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

Ethanol Sensor of CdO/Al2O3/CeO2 Obtained from Ce-DOPED Layered Double Hydroxides with High Response and Selectivity

Science.gov (United States)

Xu, Dongmei; Guan, Meiyu; Xu, Qinghong; Guo, Ying; Wang, Yao

2013-04-01

In this paper, Ce-doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce-doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.

Spray deposited CeO2–TiO2 counter electrode for electrochromic ...

Indian Academy of Sciences (India)

Abstract. Optically passive thin films of CeO2–TiO2 mixed oxides with molar ratio of Ce/Ti of 0.05 were deposited by the spray pyrolysis technique (SPT) on a glass and fluorine-doped tin oxide (FTO)-coated glass substrates. Precur- sor solution containing cerium nitrate hexahydrate (Ce(NO3)2·6H2O) and titanium ...

Study of the defect structure of ''pure'' and doped nonstoichiometric CeO2. Final report, January 1, 1965--May 31, 1977

International Nuclear Information System (INIS)

Blumenthal, R.N.

1977-11-01

The defect structure and transport properties of defects in nonstoichiometric oxides was studied based on their electrical and thermodynamic behavior. Similar studies were also made on doped-nonstoichiometric oxides to determine the effect of the ionic radii, valence and concentration of the dopant cation on the nonstoichiometric defect structure and the transport properties of these defects. The thermodynamic and electrical property study on ''pure'' and doped-nonstoichiometric CeO 2 /sub -x/ is reviewed. The combined study of the electrical conductivity, ionic transference, and thermodynamic measurements initiated on CaO-doped CeO 2 as a function of temperature, oxygen pressure and CaO content is discussed. The results of similar measurements on CeO 2 doped with other oxides (e.g., ThO 2 , Ta 2 O 5 , etc.) which have cations with different valences and ionic radii are also discussed. The primary objective of these studies was to determine the effect of ionic radii, valence and concentration of the dopant cation on (1) the nonstoichiometric behavior, (2) the thermodynamic quantities ΔantiH/sub O 2 / and ΔantiS/sub O 2 /, (3) the nonstoichiometric defect structure, (4) the electronic and ionic conductivities, and (5) the mobility of electrons and oxygen vacancies in doped CeO 2 /sub -x/

Er3+-Al2O3 nanoparticles doping of borosilicate glass

International Nuclear Information System (INIS)

Massera, Jonathan; Petit, Laeticia; Hupa, Leena; Hupa, Mikko; Koponen, Joona; Glorieux, Benoit

2015-01-01

Novel borosilicate glasses were developed by adding in the glass batch Er 3+ -Al 2 O 3 nanoparticles synthetized by using a soft chemical method. A similar nanoparticle doping with modified chemical vapour deposition (MCVD) process was developed to increase the efficiency of the amplifying silica fibre in comparison to using MCVD and solution doping. It was shown that with the melt quench technique, a Er 3+ -Al 2 O 3 nanoparticle doping neither leads to an increase in the Er 3+ luminescence properties nor allows one to control the rare-earth chemical environment in a borosilicate glass. The site of Er 3+ in the Er 3+ -Al 2 O 3 nanoparticle containing glass seems to be similar as in glasses with the same composition prepared using standard raw materials. We suspect the Er 3+ ions to diffuse from the nanoparticles into the glass matrix. There was no clear evidence of the presence of Al 2 O 3 nanoparticles in the glasses after melting. (author)

Physical properties of nanostructured CeO2 thin films grown by SILAR method

Science.gov (United States)

Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

2018-05-01

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

A novel high-performance supercapacitor based on high-quality CeO2/nitrogen-doped reduced graphene oxide nanocomposite

Science.gov (United States)

Heydari, Hamid; Gholivand, Mohammad Bagher

2017-03-01

In this work, we have developed a novel nanocomposite via deposition of ceria (CeO2) on nitrogen-doped reduced graphene (CeO2/NRGO). NRGO was synthesized through a facile, safe, and scalable method to achieve simultaneous thermal reduction along with nitrogen doping of graphene oxide (GO) in air at much lower reaction temperature. CeO2/NRGO was prepared via a sonochemical method in which ceria nanoparticles were uniformly distributed on NRGO sheets. The structure and morphology of CeO2/NRGO nanocomposites were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR), and Raman spectroscopy. Electrochemical properties of the proposed nanocomposite electrodes were investigated by cyclic voltammetry (CV), galvanostatic charge/discharge, continuous cyclic voltammetry (CCV), and electrochemical impedance spectroscopy (EIS) measurements. CeO2-NRGO nanocomposite electrodes showed excellent supercapacitive behavior, including much higher specific capacitance (230 F g-1 at 2 mV s-1) and higher rate capability compared to pure N-graphene. The cycling stability of the electrodes was measured by continues cyclic voltammetry (CCV) technique. The CCV showed that the specific capacitance of the CeO2/NRGO and NRGO nanocomposite maintained at 94.1 and 93.2% after 4000 cycles. The results suggest its promising potential as efficient electrode material for supercapacitors.

Hydrocracking of cumene over Ni/Al 2O 3 as influenced by CeO 2 doping and γ-irradiation

Science.gov (United States)

El-Shobaky, G. A.; Doheim, M. M.; Ghozza, A. M.

2004-01-01

Cumene hydrocracking was carried out over pure and doped Ni/Al 2O 3 solids and also, on these solids after exposure to different doses of γ-rays between 0.4 and 1.6 MGy. The dopant concentration was varied between 1 and 4 mol% CeO 2. Pure and doped samples were subjected to heat treatment at 400°C and cumene hydrocracking reaction was carried out using various solids at temperatures between 250°C and 400°C by means of micropulse technique. The results showed that both CeO 2 doping and γ-irradiation of the investigated system brought about an increase in its specific surface area. γ-irradiation of pure samples increased their catalytic activities effectively. However, the doping caused a decrease in the catalytic activity. γ-irradiation of the doped samples brought about a net decrease in the catalytic activity. The catalytic reaction products over different investigated solids were ethylbenzene as a major product together with different amounts of toluene, benzene and C 1-C 3 gaseous hydrocarbons. The selectivity towards the formation of various reaction products varies with the reaction temperature, doping and γ-irradiation.

Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO2 thin films obtained by evaporation induced self-assembly method

International Nuclear Information System (INIS)

Borlaf, Mario; Caes, Sebastien; Dewalque, Jennifer; Colomer, María Teresa; Moreno, Rodrigo; Cloots, Rudi; Boschini, Frederic

2014-01-01

Polymeric sol–gel route has been used for the preparation of TiO 2 and RE 2 O 3– TiO 2 (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er 3+ and Eu 3+ was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu 3+ and Er 3+ f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO 2 mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials

Electrical and microstructural properties of Yb-doped CeO2

Directory of Open Access Journals (Sweden)

B. Matović

2014-06-01

Full Text Available Nanopowdered Ce1−xYbxO2−δ solid solutions (0 ≤ x ≤ 0.2 were synthesized by a self-propagating room temperature synthesis. XRD and SEM were used to study the properties of these materials as well as the Yb solubility in CeO2 lattice. Results showed that all the obtained powders were solid solutions with a fluorite-type crystal structure and with nanometric particle size. The average size of Ce1−xYbxO2−δ particles was approximately 3 nm. Electrochemical impedance spectroscopy for the sintered pellets depicted that it was possible to separate Rbulk and Rgb in the temperature interval of 550–800 °C. The activation energy for the bulk conduction was 1.03 eV and for grain boundary conduction was 1.14 eV. Grain boundary resistivity dominates over the other resistivities. These measurements confirmed that Yb3+-doped CeO2 material had a potential as electrolyte for intermediate-temperature solid oxide fuel cell applications.

Efficient 1.54-μm emission through Eu2+ sensitization of Er3+ in thin films of Eu2+/Er3+ codoped barium strontium silicate under broad ultraviolet light excitation

International Nuclear Information System (INIS)

Li, Leliang; Zheng, Jun; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2015-01-01

Thin films of Eu 2+ /Er 3+ codoped barium strontium silicate were deposited on a thermal oxide Si substrate by magnetron sputtering. Optical properties suggest that after a rapid annealing process, these films can lead to efficient Er 3+ emission at 1.54 μm with a lifetime of about 7.9 ms. Intense 1.54-μm light emission was achieved under broad ultraviolet light excitation through efficient energy transfer from Eu 2+ to Er 3+ . These results indicate that the Eu 2+ /Er 3+ thin films have potential applications as low cost and compact erbium doped waveguide amplifiers pumped by LEDs. - Highlights: • The Er 0.07 Eu 0.14 Sr 1.14 Ba 0.79 SiO 4 films are fabricated by magnetron sputtering. • Efficient energy transfer from Eu 2+ to Er 3+ ions by the dipole–dipole interaction. • Intense 1.54 μm emission is achieved under broad excitation spectrum. • The films have potential applications as low cost and compact EDWAs

Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

International Nuclear Information System (INIS)

Scheidecker, R.W.

1979-01-01

Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

Long afterglow property of Er"3"+ doped Ca_2SnO_4 phosphor

International Nuclear Information System (INIS)

Zhang, Dongyun; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

2016-01-01

A novel green emitting long afterglow phosphor, Er"3"+ -doped Ca_2SnO_4 (Ca_2SnO_4:Er"3"+), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er"3"+ of 2% was determined. The Ca_2SnO_4:Er"3"+ phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca_2SnO_4:2 mol% Er"3"+ phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca_2SnO_4 host with rare-earth ions (Er"3"+). - Highlights: • A novel green emitting long afterglow phosphor, Ca_2SnO_4:Er"3"+, was prepared. • An optimal doping concentration of Er"3"+ of 2% was determined. • After the UV source was turned off, the Ca_2SnO_4:Er"3"+ showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca_2SnO_4:Er"3"+. • The persistent afterglow of the Ca_2SnO_4:Er"3"+ was attributed to suitable electron or hole traps.

Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO{sub 2} thin films obtained by evaporation induced self-assembly method

Energy Technology Data Exchange (ETDEWEB)

Borlaf, Mario, E-mail: mborlaf@icv.csic.es [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Caes, Sebastien; Dewalque, Jennifer [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); Colomer, María Teresa; Moreno, Rodrigo [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Cloots, Rudi; Boschini, Frederic [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); APTIS, Institute of Physics, University of Liege, B5 Sart Tilman, 4000 Liege (Belgium)

2014-05-02

Polymeric sol–gel route has been used for the preparation of TiO{sub 2} and RE{sub 2}O{sub 3–}TiO{sub 2} (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er{sup 3+} and Eu{sup 3+} was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu{sup 3+} and Er{sup 3+} f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO{sub 2} mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials.

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

Science.gov (United States)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Synthesis, Characterization and Properties of CeO2-doped TiO2 Composite Nanocrystals

Directory of Open Access Journals (Sweden)

Oman ZUAS

2013-12-01

Full Text Available Pure TiO2 and CeO2-doped TiO2 (3 % CeO2-97 %TiO2 composite nanocrystals were synthesized via co-precipitation method and characterized using TGA, XRD, FTIR, DR-UV-vis and TEM. The XRD data revealed that the phase structure of the synthesized samples was mainly in pure anatase having crystallite size in the range of 7 nm – 11 nm. Spherical shapes with moderate aggregation of the crystal particles were observed under the TEM observation. The presence of the CeO2 at TiO2 site has not only affected morphologically but also induced the electronic property of the TiO2 by lowering the band gap energy from 3.29 eV (Eg-Ti to 3.15 eV (Eg-CeTi. Performance evaluation of the synthesized samples showed that both samples have a strong adsorption capacity toward Congo red (CR dye in aqueous solution at room temperature experiment, where  the capacity of the CeTi was higher than the Ti sample. Based on DR-UV data, the synthesized samples obtained in this study may also become promising catalysts for photo-assisted removal of synthetic dye in aqueous solution. DOI: http://dx.doi.org/10.5755/j01.ms.19.4.2732

Towards understanding the electronic structure of Fe-doped CeO2 nanoparticles with X-ray spectroscopy.

Science.gov (United States)

Wang, Wei-Cheng; Chen, Shih-Yun; Glans, Per-Anders; Guo, Jinghua; Chen, Ren-Jie; Fong, Kang-Wei; Chen, Chi-Liang; Gloter, Alexandre; Chang, Ching-Lin; Chan, Ting-Shan; Chen, Jin-Ming; Lee, Jyh-Fu; Dong, Chung-Li

2013-09-21

This study reports on the electronic structure of Fe-doped CeO2 nanoparticles (NPs), determined by coupled X-ray absorption spectroscopy and X-ray emission spectroscopy. A comparison of the local electronic structure around the Ce site with that around the Fe site indicates that the Fe substitutes for the Ce. The oxygen K-edge spectra that originated from the hybridization between cerium 4f and oxygen 2p states are sensitive to the oxidation state and depend strongly on the concentration of Fe doping. The Ce M(4,5)-edges and the Fe L(2,3)-edges reveal the variations of the charge states of Ce and Fe upon doping, respectively. The band gap is further obtained from the combined absorption-emission spectrum and decreased upon Fe doping, implying Fe doping introduces vacancies. The oxygen vacancies are induced by Fe doping and the spectrum reveals the charge transfer between Fe and Ce. Fe(3+) doping has two major effects on the formation of ferromagnetism in CeO2 nanoparticles. The first, at an Fe content of below 5%, is that the formation of Fe(3+)-Vo-Ce(3+) introduces oxygen deficiencies favoring ferromagnetism. The other, at an Fe content of over 5%, is the formation of Fe(3+)-Vo-Fe(3+), which favors antiferromagnetism, reducing the Ms. The defect structures Fe(3+)-Vo-Ce(3+) and Fe(3+)-Vo-Fe(3+) are crucial to the magnetism in these NPs and the change in Ms can be described as the effect of competitive interactions of magnetic polarons and paired ions.

An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study

Science.gov (United States)

Hussain, Fayyaz; Imran, Muhammad; Rana, Anwar Manzoor; Khalil, R. M. Arif; Khera, Ejaz Ahmad; Kiran, Saira; Javid, M. Arshad; Sattar, M. Atif; Ismail, Muhammad

2018-03-01

The aim of this study is to figure out better metal dopants for CeO2 for designing highly efficient non-volatile memory (NVM) devices. The present DFT work involves four different metals doped interstitially and substitutionally in CeO2 thin films. First principle calculations involve electron density of states (DOS) and partial density of states (PDOS), and isosurface charge densities are carried out within the plane-wave density functional theory using GGA and GGA + U approach by employing the Vienna ab initio simulation package VASP. Isosurface charge density plots confirmed that interstitial doping of Zr and Ti metals truly assists in generating conduction filaments (CFs), while substitutional doping of these metals cannot do so. Substitutional doping of W may contribute in generating CFs in CeO2 directly, but its interstitial doping improves conductivity of CeO2. However, Ni-dopant is capable of directly generating CFs both as substitutional and interstitial dopants in ceria. Such a capability of Ni appears acting as top electrode in Ni/CeO2/Pt memory devices, but its RS behavior is not so good. On inserting Zr layer to make Ni/Zr:CeO2/Pt memory stacks, Ni does not contribute in RS characteristics, but Zr plays a vital role in forming CFs by creating oxygen vacancies and forming ZrO2 interfacial layer. Therefore, Zr-doped devices exhibit high-resistance ratio of 104 and good endurance as compared to undoped devices suitable for RRAM applications.

Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

International Nuclear Information System (INIS)

Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

2010-01-01

Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

Physical Properties of Mixed Conductor Solid Oxide Fuel Cell Anodes of Doped CeO2

DEFF Research Database (Denmark)

Mogensen, Mogens Bjerg; Lindegaard, Thomas; Hansen, Uffe Rud

1994-01-01

Samples of CeO2 doped with oxides such as CaO and Gd2O3 were prepared. Their conductivities and expansions onreduction were measured at 1000°C, and the thermal expansion coefficients in the range 50 to 1000°C were determined. Theionic and electronic conductivity were derived from curves of total ...

Parametric study of up-conversion efficiency in Er-doped ceria nanoparticles under 780 nm excitation

International Nuclear Information System (INIS)

Shehata, N.; Kandas, I.; Samir, E.; Meehan, K.; Aldacher, M.

2016-01-01

This paper presents a new parametric study of the optical up-conversion process in ceria nanoparticles doped with erbium (Er-CeO 2 NPs). Under 780 nm excitation, both the possible transitions that occur between Er 3+ ions and up-conversion rate model simulation are presented. Ceria nanoparticles (CeO 2 NPs) doped with erbium are experimentally synthesized using chemical precipitation technique with post-annealing up to 900 °C with different weight ratios of erbium dopant. We found that the synthesized nanoparticles can emit both green and red emissions under 780 nm laser excitation via two-photon absorption mechanism. Then, the quantum efficiencies of both colored emissions are theoretically investigated with different parameters related to the optical conversion process and the studied material. In addition, this work offer suggested ranges for the optimum values of the studied parameters which could improve the quantum yield efficiency. Einstein coefficients for erbium hosted in ceria are discussed in details using Judd–Ofelt analysis. This promising study could be helpful in improving the up-conversion efficiency of Er-ceria nanoparticles for applications such as bio-imaging and optical-based sensors.

Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

Science.gov (United States)

Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

2015-02-01

Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

A. C. conduction behaviour in amorphous WO 3 /CEO 2 thin film ...

African Journals Online (AJOL)

A. C. conduction behaviour in amorphous WO3/CEO2 thin film. B Yagoubi, C A Hogarth, A Boukorrt. Abstract. No Abstract. Technologies Avancees Vol. 17 2005: pp. 5-8. Full Text: EMAIL FULL TEXT EMAIL FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT · http://dx.doi.org/10.4314/ta.v17i1.18478.

Enhancement of photocatalytic properties of TiO2 nanoparticles doped with CeO2 and supported on SiO2 for phenol degradation

International Nuclear Information System (INIS)

Hao, Chunjing; Li, Jing; Zhang, Zailei; Ji, Yongjun; Zhan, Hanhui; Xiao, Fangxing; Wang, Dan; Liu, Bin; Su, Fabing

2015-01-01

Highlights: • CeO 2 -TiO 2 /SiO 2 composites were prepared via a facile co-precipitation method. • Introduction of SiO 2 support increases the dispersion of CeO 2 -TiO 2 . • CeO 2 -TiO 2 /SiO 2 exhibits an enhanced photocatalytic efficiency for phenol degradation. • Ce 3+ /Ce 4+ pair coexisting in CeO 2 improves electron–hole pairs separation efficiency. - Abstract: A series of CeO 2 -TiO 2 and CeO 2 -TiO 2 /SiO 2 composites were prepared with TiCl 4 and Ce (NO 3 ) 3 ·6H 2 O as precursors via a facile co-precipitation method. The obtained samples were characterized by various techniques such as X-ray diffraction (XRD), nitrogen adsorption (N 2 -BET), Fourier transformation infrared spectrum (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV–Vis spectroscopy measurements. The results indicated that TiO 2 doped with CeO 2 and supported on SiO 2 could reduce the crystallite size, inhibit the phase transformation, enhance the thermal stability, and effectively extend the spectral response from UV to visible range. When applied to the phenol photodegradation on a homemade batch reactor with an external cooling jacket, the CeO 2 -TiO 2 /SiO 2 catalysts exhibited significantly enhanced photodegradation efficiency in comparison with commercial Degussa P25 and CeO 2 -TiO 2 . The unique catalytic properties of CeO 2 -TiO 2 /SiO 2 were ascribed to improved electron–hole pairs separation efficiency and formation of more reactive oxygen species owing to the presence of Ce 3+ /Ce 4+ , as well as high dispersion of active component of CeO 2 -TiO 2 as a result of the introduction of SiO 2 support. Furthermore, the catalysts can be easily recovered from the reaction solution by centrifugation and reused for four cycles without significant loss of activity

Nanocrystalline Sr2CeO4 thin films grown on silicon by laser ablation

International Nuclear Information System (INIS)

Perea, Nestor; Hirata, G.A.

2006-01-01

Blue-white luminescent Sr 2 CeO 4 thin films were deposited by using pulsed laser ablation (λ = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr 2 CeO 4 grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr 2 CeO 4 however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems

Controlled growth of epitaxial CeO2 thin films with self-organized nanostructure by chemical solution method

DEFF Research Database (Denmark)

Yue, Zhao; Grivel, Jean-Claude

2013-01-01

Chemical solution deposition is a versatile technique to grow oxide thin films with self-organized nanostructures. Morphology and crystallographic orientation control of CeO2 thin films grown on technical NiW substrates by a chemical solution deposition method are achieved in this work. Based...

Kinetic Monte Carlo model of defect transport and irradiation effects in La-doped CeO2

International Nuclear Information System (INIS)

Oaks, Aaron; Yun Di; Ye Bei; Chen Weiying; Stubbins, James F.

2011-01-01

A generalized Kinetic Monte Carlo code was developed to study oxygen mobility in UO 2 type nuclear fuels, using lanthanum doped CeO 2 as a surrogate material. Molecular Statics simulations were performed using interatomic potentials for CeO 2 developed by Gotte, Minervini, and Sayle to calculate local configuration-dependent oxygen vacancy migration energies. Kinetic Monte Carlo simulations of oxygen vacancy diffusion were performed at varying lanthanum dopant concentrations using the developed generalized Kinetic Monte Carlo code and the calculated configuration-dependent migration energies. All three interatomic potentials were found to confirm the lanthanum trapping effect. The results of these simulations were compared with experimental data and the Gotte potential was concluded to yield the most realistic diffusivity curve.

Photoluminescent properties of Sr2CeO4: Eu3+ and Sr2CeO4: Eu2+ phosphors suitable for near ultraviolet excitation

International Nuclear Information System (INIS)

Suresh, K.; Poornachandra Rao, N.V.; Murthy, K.V.R.

2014-01-01

Powder phosphors of 1 mol% Eu 3+ - and Eu 2+ -doped strontium cerium oxide (Sr 2 CeO 4 ) were synthesized by standard solid-state reaction method. Eu 3+ - and Eu 2+ -doped Sr 2 CeO 4 phosphors fired at 1100 ℃ for 2 h were analysed by X-ray diffraction (XRD) and photoluminescence (PL) techniques. The XRD patterns confirm that the obtained phosphors are a single phase of Sr 2 CeO 4 composed of orthorhombic structure. Room temperature PL excitation spectrum of air-heated Sr 2 CeO 4 : Eu phosphor has exhibited bands at 260, 280 and 350 nm. Whereas the excitation spectrum of Sr 2 CeO 4 : Eu phosphor heated under reducing (carbon) atmosphere exhibited single broadband range from 260 to 390 nm. The (PL) emission peaks of both the phosphors at 467 (blue), 537 (green) and 616 nm (red) generate white light under 260, 280 and 350 nm excitation wavelengths. The Commission International de l'Eclairage (CIE) colour coordinates conforms that these phosphors emitting white light. The results reveal that these phosphors are multifunctional phosphors which emit white light under these excitations that they could be used as white components for display and lamp devices and as well as possible good light-conversion phosphor LEDs under near-ultraviolet (nUV) chip. (author)

Study of the defect structure of ''pure'' and doped nonstoichiometric CeO2

International Nuclear Information System (INIS)

Blumenthal, R.N.

1975-09-01

Electrical conductivity and thermogravimetric measurements were made on Ta 2 O 5 -doped nonstoichiometric CeO 2 (i.e. Ce/sub 1-y/Ta/sub y/O/sub 2-x/ ) as a function of temperature and oxygen partial pressure. Over a limited range of temperature and nonstoichiometry, the isothermal dependence of the electrical conductivity on nonstoichiometry may be described by the equation sigma = A + Bx, where A is the electronic conductivity associated with the electronic defects produced by doping CeO 2 with Ta 2 O 5 . The electronic conductivity resulting from the nonstoichiometric defect reaction O/sup x/ + 2Ce/sub Ce//sup x/ = V 0 + 2Ce'sub Ce/ + 1 / 2 O 2 (g) is equal to Bx. The ionic conductivity may be described by the relation sigma/sub i/ = B[y+x]eμ'/sub V 0 / exp (--E/sub i//kT), and the electronic conductivity by the isothermal expressions sigma/sub e/ proportional to P/sub O 2 //sup -1/4/ and sigma/sub e/ proportional to x; x less than 3 x 10 -2 . These results are consistent with defect models involving doubly ionized oxygen vacancies. An empirical expression (i.e. Δ anti H/sub O 2 / proportional to y/2 or z/4) was obtained relating the dependence of Δ anti H/sub O 2 / on the dopant concentration of lower valent foreign cations (e.g. y/2 for Ce/sub 1-y/M/sub y/O/sub 2-y-x/ and z/4 for Ce/sub 1-z/M/sub z/O/sub 2-z/2-x/ where M = Ca, Sr and M' = Y, La). (auth)

Long afterglow property of Er{sup 3+} doped Ca{sub 2}SnO{sub 4} phosphor

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dongyun, E-mail: dyz@sit.edu.cn; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

2016-05-15

A novel green emitting long afterglow phosphor, Er{sup 3+} -doped Ca{sub 2}SnO{sub 4} (Ca{sub 2}SnO{sub 4}:Er{sup 3+}), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er{sup 3+} of 2% was determined. The Ca{sub 2}SnO{sub 4}:Er{sup 3+} phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca{sub 2}SnO{sub 4}:2 mol% Er{sup 3+} phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca{sub 2}SnO{sub 4} host with rare-earth ions (Er{sup 3+}). - Highlights: • A novel green emitting long afterglow phosphor, Ca{sub 2}SnO{sub 4}:Er{sup 3+}, was prepared. • An optimal doping concentration of Er{sup 3+} of 2% was determined. • After the UV source was turned off, the Ca{sub 2}SnO{sub 4}:Er{sup 3+} showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca{sub 2}SnO{sub 4}:Er{sup 3+}. • The persistent afterglow of the Ca{sub 2}SnO{sub 4}:Er{sup 3+} was attributed to suitable electron or hole traps.

Integration of atomic layer deposition CeO2 thin films with functional complex oxides and 3D patterns

International Nuclear Information System (INIS)

Coll, M.; Palau, A.; Gonzalez-Rosillo, J.C.; Gazquez, J.; Obradors, X.; Puig, T.

2014-01-01

We present a low-temperature, < 300 °C, ex-situ integration of atomic layer deposition (ALD) ultrathin CeO 2 layers (3 to 5 unit cells) with chemical solution deposited La 0.7 Sr 0.3 MnO 3 (LSMO) functional complex oxides for multilayer growth without jeopardizing the morphology, microstructure and physical properties of the functional oxide layer. We have also extended this procedure to pulsed laser deposited YBa 2 Cu 3 O 7 (YBCO) thin films. Scanning force microscopy, X-ray diffraction, aberration corrected scanning transmission electron microscopy and macroscopic magnetic measurements were used to evaluate the quality of the perovskite films before and after the ALD process. By means of microcontact printing and ALD we have prepared CeO 2 patterns using an ozone-robust photoresist that will avoid the use of hazardous lithography processes directly on the device components. These bilayers, CeO 2 /LSMO and CeO 2 /YBCO, are foreseen to have special interest for resistive switching phenomena in resistive random-access memory. - Highlights: • Integration of atomic layer deposition (ALD) CeO 2 layers on functional complex oxides • Resistive switching is identified in CeO 2 /La 0.7 Sr 0.3 MnO 3 and CeO 2 /YBa 2 Cu 3 O 7 bilayers. • Study of the robustness of organic polymers for area-selective ALD • Combination of ALD and micro-contact printing to obtain 3D patterns of CeO 2

Isolated centres versus defect associates in Sm3+-doped CeO2: a spectroscopic investigation

International Nuclear Information System (INIS)

Tiseanu, Carmen; Avram, Daniel; Cojocaru, Bogdan; Parvulescu, Vasile I; Vela-Gonzalez, Andrea V; Sanchez-Dominguez, Margarita

2013-01-01

The interactions between Sm 3+ and oxygen vacancies in CeO 2 are probed by the use of tuneable laser excited time-resolved photoluminescence and Raman spectroscopies. It is found that Sm 3+ (with doping concentrations of 0.1, 0.3, 1 and 5 wt%) substitutes largely for Ce 4+ in sites with cubic symmetry and the corresponding emission is sensitized via the Ce 4+ –O 2− charge-transfer band of CeO 2 . It is established from the photoluminescence spectra measured at long delay after the laser pulse that the local environment around cubic Sm 3+ centres is not changed with concentration and ceria size. In addition to cubic symmetry Sm 3+ centres, low-symmetry Sm 3+ centres tentatively assigned to the Sm 3+ –oxygen vacancy associates of nearest-neighbour type are also observed. Their emission is preferentially excited via the weak f–f absorption transitions of Sm 3+ . A relatively strong concentration-induced quenching of Sm 3+ emission was inferred from the decrease in the average emission lifetimes from 2.1 ms (0.1 wt%) to 0.87 ms (5 wt%). The local environments of Sm 3+ and Eu 3+ in CeO 2 are also compared on the basis of their emission spectra and decays. (paper)

Optimum Er concentration for in situ doped GaN visible and infrared luminescence

International Nuclear Information System (INIS)

Lee, D. S.; Heikenfeld, J.; Steckl, A. J.; Hommerich, U.; Seo, J. T.; Braud, A.; Zavada, J.

2001-01-01

GaN thin films have been doped with varying Er concentrations (0.01--10 at.%) during molecular-beam-epitaxy growth. As expected, the visible and infrared (IR) emissions, from photoluminescence (PL) and electroluminescence (EL), are a strong function of Er concentration. We report on the determination of an optimum Er doping level for PL and EL intensity. Secondary ion mass spectroscopy and Rutherford backscattering measurements showed that the Er concentration in GaN increased exponentially with Er cell temperature. PL and EL intensity of green emission at 537 and 558 nm, due to Er 4f--4f inner shell transitions, exhibited a maximum at ∼1 at.% Er. IR PL intensity at 1.54 μm, due to another Er transition, revealed the same maximum for ∼1 at.% Er concentration. PL lifetime measurements at 537 nm showed that samples with Er concentration <1 at.% had a lifetime of ∼5 μs. For Er concentration ≥1 at.%, the lifetime decreased rapidly to values below 1 μs. This concentration quenching is believed to be due to a combination of Er cross relaxation and energy transfer to GaN defects, eventually followed by precipitation. This conclusion is supported by x-ray diffraction measurements. As a result, we have determined that the optimum Er doping concentration into GaN is ∼1 at.%. Copyright 2001 American Institute of Physics

Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

2010-06-30

Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

International Nuclear Information System (INIS)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y.; Cheng, C.H.; Zhao, Y.

2008-01-01

An over 150 nm thick Sm 0.2 Ce 0.8 O 1.9-x (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T c0 = 87 K as well as J c (0 T, 77 K) ∼ 1 MA/cm 2 . These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO 2 film, which renders it a promising candidate as single buffer layer for YBCO coated conductors

Sintering Studies of Ga-Doped CeO2 (Ga-Doped PuO2 Surrogate) for Mixed Oxide Nuclear Fuel

International Nuclear Information System (INIS)

Haertling, C.; Huling, J.; Park, Y.S.

1999-01-01

Sintering studies of CeO 2 and CeO 2 + 2 wt. % Ga 2 O 3 were completed. Firing temperatures studied were 1250-1650 C with 2 to 4 hour firing soak times in air. Powders fabricated by three methods (as-received, attrition-mill and nitrite-derived) were studied. Attrition-milled CeO 2 improved densities as compared with as-received CeO 2 . Attrition-milled CeO 2 with 2 wt.% Ga 2 O 3 showed decreased densities with increasing temperatures. As-received CeO 2 with 2 wt.% Ga 2 O 3 showed a opposite trend, increasing in density with increased firing temperature. Two pellet preparation methods were studied, a one-step-press method and a two-step-press method. The two-step-press method showed greater densities at lower firing temperatures and times as compared with the one-step-press method, however for CeO 2 + 2 wt.% Ga 2 O 3 , the two methods gave equivalent results at 1650 C, 6 hr. firing conditions

Investigation on Er{sup 3+}/Ho{sup 3+} co-doped silicate glass for ~2 µm fiber lasers

Energy Technology Data Exchange (ETDEWEB)

Liu, Xueqiang; Huang, Feifei; Cheng, Jimeng; Fan, Xiaokang; Gao, Song [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Graduate School of Chinese Academy of Science, Beijing 100039 (China); Zhang, Junjie [College of Materials Science and Technology, China Jiliang University, Hangzhou 310018 (China); Hu, Lili [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Chen, Danping, E-mail: dpchen2008@aliyun.com [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2015-06-15

A stable Er{sup 3+}/Ho{sup 3+} co-doped lead silicate glass is developed. Luminescent properties are recorded under pumping with 808 and 1550 nm lasers. Energy-transfer mechanism and efficiency are analyzed. Energy-transfer efficiency from Er{sup 3+}:{sup 4}I{sub 13/2} to Ho{sup 3+}:{sup 5}I{sub 7} reaches 93.8% at 3 mol% Ho{sub 2}O{sub 3} doping concentration. Strong luminescence is detected when pumped at 1550 nm because of efficient energy transfer from Er{sup 3+}:{sup 4}I{sub 13/2} to Ho{sup 3+}:{sup 5}I{sub 7}. Peak gain coefficient at 2056 nm is detected as 1.62 cm{sup −1}. The excellent luminescent property and high stability indicate that Er{sup 3+}/Ho{sup 3+} co-doped lead silicate glass can be applied in 2 µm fiber lasers. - Highlights: • Er{sup 3+}/Ho{sup 3+} co-doped silicate glasses with high stability are prepared. • Strong luminescence is detected under pump of 1550 nm lasers owing to efficient energy transfer from Er{sup 3+} to Ho{sup 3+}. • Transfer efficiency is calculated to be 93.8% when Ho{sub 2}O{sub 3} doping concentration is up to 3 mol%. • Gain coefficient peaks at 2056 nm to be 1.62 cm{sup −1}.

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Doping-induced quantum crossover in Er2Ti2 -xSnxO7

Science.gov (United States)

Shirai, M.; Freitas, R. S.; Lago, J.; Bramwell, S. T.; Ritter, C.; Živković, I.

2017-11-01

We present the results of the investigation of magnetic properties of the Er2Ti2 -xSnxO7 series. For small doping values, the ordering temperature decreases linearly with x , while the moment configuration remains the same as in the x =0 parent compound. Around x =1.7 doping level, we observe a change in the behavior, where the ordering temperature starts to increase and new magnetic Bragg peaks appear. For the first time, we present evidence of a long-range order (LRO) in Er2Sn2O7 (x =2.0 ) below TN=130 mK. It is revealed that the moment configuration corresponds to a Palmer-Chalker type with a value of the magnetic moment significantly renormalized compared to x =0 . We discuss our results in the framework of a possible quantum phase transition occurring close to x =1.7 .

Spectroscopic properties of Er3+ and Yb3+ co-doped glass ceramics containing SrF2 nanocrystals

International Nuclear Information System (INIS)

Qiao Xvsheng; Fan Xianping; Wang Minquan; Zhang Xianghua

2009-01-01

The spectroscopic properties of Er 3+ /Yb 3+ co-doped 50SiO 2 -10Al 2 O 3 -20ZnF 2 -20SrF 2 glass and glass ceramic containing SrF 2 nanocrystals were investigated. The formation of SrF 2 nanocrystals in the glass ceramic was confirmed by XRD. The oscillator strengths for several transitions of the Er 3+ ions in the glass ceramic have been obtained and the Judd-Ofelt parameters were then determined. The XRD result and Judd-Ofelt parameters suggested that Er 3+ and Yb 3+ ions had efficiently enriched in the SrF 2 nanocrystals in the glass ceramic. The lifetime of excited states has been used to reveal the surroundings of luminescent Er 3+ and Yb 3+ and energy transfer (ET) mechanism between Er 3+ and Yb 3+ . Much stronger upconversion luminescence and longer lifetime of the Er 3+ /Yb 3+ co-doped glass ceramic were observed in comparison with the Er 3+ /Yb 3+ co-doped glass, which could be ascribed to more efficient ET from Yb 3+ to Er 3+ due to the enrichment of Yb 3+ and Er 3+ and the shortening of the distance between lanthanide ions in the precipitated SrF 2 nanocrystals.

Dependence of the up-conversion emission of Li+ co-doped Y2O3:Er3+ films with dopant concentration

International Nuclear Information System (INIS)

Meza-Rocha, A.N.; Huerta, E.F.; Caldiño, U.; Carmona-Téllez, S.; Bettinelli, M.; Speghini, A.; Pelli, S.; Righini, G.C.

2015-01-01

The effect of dopant concentration on the up-conversion emission, and in particular on the Er 3+ related green and red emissions of spray pyrolysis deposited films of Y 2 O 3 :Er 3+ co-doped with Li + , is reported. Er 3+ concentrations in the films in the range of 1.1–5.6 at% (1.5–14 at% Er 3+ in the spraying solution) were studied, as well as the effect of co-doping them with Li + . Large concentrations of Er 3+ favor the red emission, especially for contents higher than 10 at% in the spraying solution. Li + co-doping improves the green and red emissions up to 365 and 171 times, respectively, depending on the Er 3+ and Li + concentrations. - Highlights: Up-converting Y 2 O 3 :Er 3+ and Y 2 O 3 :Er 3+ , Li + films were deposited by spray pyrolysis. The effect of Li + co-doping on the green and red UC Er 3+ emission is reported. Li + co-doping improves the green and red emission up to 365 and 171 times

Spectroscopic and structural properties of polycrystalline Y{sub 2}Si{sub 2}O{sub 7} doped with Er{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Marciniak, L., E-mail: L.Marciniak@int.pan.wroc.pl [Institute for Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Hreniak, D.; Strek, W. [Institute for Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Piccinelli, F., E-mail: fabio.piccinelli@univr.it [Laboratorio di Chimica dello Stato Solido, DB, Università di Verona and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Speghini, A.; Bettinelli, M. [Laboratorio di Chimica dello Stato Solido, DB, Università di Verona and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Miritello, M., E-mail: maria.miritello@ct.infn.it [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Lo Savio, R.; Cardile, P.; Priolo, F. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy)

2016-02-15

Powders of yttrium disilicate (Y{sub 2}Si{sub 2}O{sub 7}) doped with Er{sup 3+} have been prepared by the sol–gel method. The structure of the obtained powders has been determined. Room temperature emission spectra have been recorded and excited state decay profiles have been analyzed. Differences between the spectroscopic properties of Er{sup 3+} in monoclinic α-Y{sub 2}Si{sub 2}O{sub 7} (space group P-1) and β-Y{sub 2}Si{sub 2}O{sub 7} (space group C2/m) polymorphs have been investigated and shown. The significant broadening of the emission spectra recorded for the α phase compared to the one for the β phase was discussed in terms of higher number of Y{sup 3+} sites (4) present in the α phase with respect to only one Y{sup 3+} site in the case of β phase. The higher value of the luminescence decay time of β phase (11.2 ms) compared to the α phase (8.5 ms) is associated with the higher site symmetry of β-Y{sub 2}Si{sub 2}O{sub 7}. Moreover it was found that Er{sup 3+} concentration affects the shape of the {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} emission band. It results in changes of the relative emission intensities of peaks localized at 1527 nm and 1532 nm; this indicates changes of the Y{sup 3+} sites occupation on increasing the Er{sup 3+} concentration. The luminescence lifetime was observed to decrease with the increase of Er{sup 3+} concentration. The spectroscopic results have been compared with the ones relative to thin films of Y{sub 2}Si{sub 2}O{sub 7}:Er{sup 3+} with a similar composition. The lower value of the luminescence decay time observed for thin films compared to the powder of α phase was explained with the changes of the particles packing resulting in the change of the effective refractive index.

Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study

Science.gov (United States)

Chen, Kai; Sundermann, Martin; Strigari, Fabio; Kawabata, Jo; Takabatake, Toshiro; Tanaka, Arata; Bencok, Peter; Choueikani, Fadi; Severing, Andrea

2018-04-01

Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce M4 ,5 edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs2Al10 . Both substitutions have a strong impact on the unusual high Néel temperature TN=28.5 K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs2Al10 being representative for the Re and Ir substituted compounds. The impact of electron and hole doping on the hybridization between conduction and 4 f electrons is related to the amount of f0 in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of c f -hybridization strength and enhanced TN is discussed. The direction and doping dependence of the circular dichroism strongly supports the idea of strong Kondo screening along the crystallographic a direction.

Up conversion luminescence of Yb3+–Er3+ codoped CeO2 nanocrystals with imaging applications

International Nuclear Information System (INIS)

Cho, Jung-Hyun; Bass, Michael; Babu, Suresh; Dowding, Janet M.; Self, William T.; Seal, Sudipta

2012-01-01

The effects of Yb 3+ doping on up conversion in Yb 3+ –Er 3+ co-doped cerium oxide nanocrystals are reported. Green emission around 545 and 560 nm attributed to the 2 H 11/2 , 4 S 3/2 → 4 I 15/2 transitions and red emission around 660 and 680 nm due to 4 F 9/2 → 4 I 15/2 transitions under 975 nm excitation were studied at room temperature. Both green and red emission intensities increase as the Yb 3+ concentration increases from 0%. Emission strength starts to decrease after the Yb 3+ concentration exceeds a critical amount. The green emission strength peaks around 1% Yb 3+ concentration while the red emission strength peaks around 4%. An explanation of competition between different decay mechanisms is presented to account for the luminescence dependence on Yb 3+ concentration. Also, the application of up converting nanoparticles in biomedical imaging is demonstrated. - Highlights: ► Up conversion in Yb 3+ –Er 3+ co-doped cerium oxide nanocrystals. ► Different decay mechanisms determine luminescence efficiency. ► Up converting nanoparticles in biomedical imaging is demonstrated.

Synthesis and characterization of Er3+ doped CaF2 nanoparticles

International Nuclear Information System (INIS)

Zhi Guanglin; Song Jinghong; Mei Bingchu; Zhou Weibing

2011-01-01

Highlights: → Er 3+ :CaF 2 nanoparticles were synthesized by co-precipitation method with particle size of 8-36 nm. → Increasing dopant concentration increases lattice constants and decreases grain size. → Annealing treatment has a remarkable effect on luminescence properties. → Luminescence intensity decrease with the increasing of the dopant concentration. - Abstract: Er 3+ doped CaF 2 nanoparticles were synthesized by a chemical co-precipitation method. Effect of the dopant concentrations on the structure and optical properties of the CaF 2 nanoparticles was investigated. The X-ray powder diffraction and transmission electron microscopy analysis was used to characterize the structure and morphology of the nanoparticles. The nanoparticles with different dopant concentration exhibited a sphere-like morphology with diameters of about 8-36 nm. The incorporation of Er 3+ ions into CaF 2 resulted in the decrease in grain size and deterioration of crystallinity, but enlarged the lattice constants of CaF 2 . Additional annealing treatment at 400 deg. C to the prepared CaF 2 removed the NO 3 - and OH - groups adsorbed on the particles' surfaces, and improved the optical properties of the nanoparticles. The fluorescence intensity, with a maximum at approximately 0.4 mol%, decreased with the increase in doping concentration because of concentration quenching.

Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.

Science.gov (United States)

Guo, Yanyan; Li, Ming; Hu, Lili; Zhang, Junjie

2012-01-15

The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high spontaneous transition probability A (65.26 s(-1)) and large 2.7 μm emission cross section σ(em) (9.53×10(-21) cm2) corresponding to the stimulated emission of Er3+:4I11/2→4I13/2 transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of Er3+ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

Up-conversion luminescence application in Er3+: TiO2 thin film prepared by dip coating sol-gel route

International Nuclear Information System (INIS)

Badr, Y.; Battisha, I.K.; Salah, A.; Salem, M.A.

2008-01-01

Sol-gel derived nano-crystalline titanium dioxide films doped with 1 up to 5% Er 3+ ions were prepared by dip coating sol-gel method. The coating sol was obtained by hydrolysis of Ti(OC 4 H 9 ) 4 in ethanol/HCI solution. The FT-Raman and the X-ray diffraction (XRD) were carried out to determine the crystal structure of the prepared samples. The morphology SEM and the cross-sectional of the film were used to characterize the microstructure and the thickness of the prepared film. It is shown that relative homogeneous, crack-free and transparent film was achieved via dipping process at 500 deg C. After the excitation with laser diode at wavelength 808 nm, visible (Vis) and infrared (IR) up-conversion emissions were evidenced in the thin film samples under investigation. The up-conversion was found to depend strongly on the Er 3+ ion concentrations. The visible emission was found to be at 540, 560, 590 and 640 nm for thin film. They are attributed to intra-4f transition of Er 3+ ions and assigned to the ( 2 H 11/2 + 4 S 3/2 ) and 4 F 9/2 , which are populated through excited state absorption (ESA) for 808 nm excitation. (author)

Sr2CeO4: Electronic and structural properties

International Nuclear Information System (INIS)

Rocha, Leonardo A.; Schiavon, Marco A.; Nascimento, Clebio S.; Guimarães, Luciana; Góes, Márcio S.; Pires, Ana M.; Paiva-Santos, Carlos O.

2014-01-01

Highlights: • Sr 2 CeO 4 it was obtained from the heat treatment of Ce 3+ -doped strontium oxalate. • Rietveld analysis made it possible to obtain information about crystalline structure. • Experimental band gap value was compared with theoretical obtained by Sparkle/PM7. • The materials obtained shows intense photoluminescence and scintillator properties. - Abstract: This work presents on the preparation and photoluminescent properties of Sr 2 CeO 4 obtained from the heat treatment of Ce(III)-doped strontium oxalate (10, 25 and 33 mol%). The oxalate precursors were heat treated at 1100 °C for 12 h. The structure of this photoluminescent material was evaluated by the Rietveld method. The route used in this work to prepare the materials showed to be viable when compared to other synthesis reported in the literature. The Sr 2 CeO 4 material showed a broad and intense band emission with a maximum around 485 nm. The quantitative phase analysis showed that the Sr 2 CeO 4 photoluminescent phase is the majority one compared to the impurity phases of SrCeO 3 and SrCO 3 . From all results it was possible to verify a complete elimination of the CeO 2 phase for the sample obtained from the heat treatment of oxalate precursor containing 33 mol% of cerium(III). The material showed excellent properties for possible candidate as scintillator materials, and in the improvement of efficiency of solar cells when excited in the UV–vis region. The CIE chromaticity diagram it is also reported in this work

Growth temperature dependence of flux pinning properties in ErBa2Cu3Oy thin films with nano-rods

International Nuclear Information System (INIS)

Haruta, M.; Sueyoshi, T.; Fujiyoshi, T.; Mukaida, M.; Kai, H.; Matsumoto, K.; Mele, P.; Maeda, T.; Horii, S.

2011-01-01

Nano-rods were introduced into ErBa 2 Cu 3 O y thin films to improve J c . Pinning properties depended on the growth temperature of the films. Morphology of nano-rods was affected by the growth temperature. The growth temperature is important to achieve high in-field J c 's. Irreversibility lines and distributions of local critical current density (J cl ) based on the percolation transition model were affected by the growth temperature (T s ) in 3.5 wt.%-BaNb 2 O 6 -doped ErBa 2 Cu 3 O y thin films. The vortex-Bose-glass-like state appeared by the introduction of nano-rods, and this vortex state was affected by T s . The shape and width of the J cl distribution strongly depended on T s . These results are probably caused by variations of the density and the growth direction for nano-rods reflecting T s . The growth temperature is an important factor to achieve higher critical current properties under magnetic fields for coated conductors of rare-earth-based cuprates with nano-rods.

Yb and Er co-doped Y2Ce2O7 nanoparticles: synthesis and ...

Indian Academy of Sciences (India)

much attention due to their potential applications in display .... Figure 1. XRD patterns of Yb3+ and Er3+ co-doped Y2Ce2O7 nanoparticles prepared for 4 h at different sintering .... vels relax to the ground 4I15/2 level (You et al 2012). For.

Er{sup 3+} Doping conditions of planar porous silicon waveguides

Energy Technology Data Exchange (ETDEWEB)

Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Lorrain, N., E-mail: nathalie.lorrain@univ-rennes1.fr [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France); Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France)

2009-11-15

EDX and infrared photoluminescence (IR PL) analyses performed on erbium-doped porous silicon waveguides (PSWG) were studied using different doping conditions. Both parameters of the cathodisation electrochemical method used for Er incorporation and parameters of thermal treatments required for Er optical activation were taken into consideration. Firstly, by varying the current density and the time of cathodisation, we have shown that a current density of 0.1 mA/cm{sup 2} for 10 min allows homogeneous Er doping to be achieved throughout the depth of the guiding layer. Then, the PL intensity at 1.53 {mu}m was studied as a function of the oxidation time at 900 deg. C and Er diffusion temperature for 60 min. Increasing the oxidation time up to 1 h allows PL to be enhanced due to active Si-O-Er complex formation whereas an oxidation time of 2 h induces a decrease in PL because of Er segregation. Moreover, an increase in the diffusion temperature induces an optimal distribution of optically active Si-Er-O complexes inside the crystallites. When the temperature is too high, a PSWG densification and Er segregation occurs inducing a decrease in PL due to energy transfer phenomena.

Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

International Nuclear Information System (INIS)

Chen Shaoqiang; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro; Dierre, Benjamin; Lee, Woong; Sekiguchi, Takashi

2010-01-01

Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.

Upconversion properties of Er3+/Yb3+ co-doped TeO2-TiO2-K2O glasses.

Science.gov (United States)

Su, Fangning; Deng, Zaide

2006-01-01

The Er3+/Yb3+ co-doped TeO2-TiO2-K2O glasses were prepared by conventional melting procedures, and their upconversion spectra were performed. The dependence of luminescence intensity on the ratio of Yb3+/Er3+ was studied, and the relationship between green upconversion luminescence intensity and Er3+ concentration is discussed in detail. The 546 nm green upconversion luminescence intensity is optimised in the studied glasses either when the Yb3+/Er3+ ratio is 25/1 and Er3+ concentration is 0.1 mol%, or when the Yb3+/Er3+ ratio is 10/1 and Er3+ concentration is 0.15 mol%. These glasses could be one of the potential candidates for LD pumping microchip solid-state lasers.

Photocatalytic performance of TiO2 catalysts modified by H3PW12O40, ZrO2 and CeO2

Institute of Scientific and Technical Information of China (English)

CAI Tiejun; LIAO Yuchao; PENG Zhenshan; LONG Yunfei; WEI Zongyuan; DENG Qian

2009-01-01

The binary composite photo-catalysts CeO2/TiO2, ZrO2/TiO2 and the ternary composite photo-catalysts H3PW12O40-CeO2/TiO2,H2PW12O40-ZrO2/TiO2 were prepared by sol-gel method. The catalysts were characterized by thermogravimetric-differential thermal analysis (TG-DTA), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The photocatalyfic elimination of methanol was used as model reaction to evaluate the photocatalytic activity of the composite catalysts under ultraviolet light irradiation. The effects of doped content, activation temperature, time, initial concentration of methanol and gas flow rate on the catalytic activity were investigated. The results showed that after doping a certain amount of CeO2 and ZrO2, crystaniTation process of TiO2 was restrained, particles of catalysts are smaller and more uniform. Doping ZrO2 not only significantly improved the catalytic activity, but also increased thermal stability. Doping H3PW12O40 also enhanced the catalytic activity. The catalytic activities of binary and ternary composite photocatalysts were significantly higher than tin-doped TiO2. The dynamics law of photocatalytic reaction over the binary CeO2/TiO2 and ZrO2/TiO2 catalysts has been studied. The activation energy 15.627 and 15.631 kJ/mol and pre-exponential factors 0.5176 and 0.9899 s-1 over each corresponding catalyst were obtained. This reaction accords to the first order dynamics law.

Visible and infrared photoluminescence from Er-doped SiOx

International Nuclear Information System (INIS)

Wan, J.; Sheng, C.; Lu, F.; Yuan, S.; Gong, D.W.; Liao, L.S.; Fang, Y.L.; Lin, F.; Wang, X.

1998-01-01

The annealing behaviors of photoluminescence of SiO x and Er-doped SiO x grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiO x , four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiO x , the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO 2 , disappears in the annealing temperature range of 500-900C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO 2 to Er ions. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Enhanced magnetodielectric and multiferroic properties of Er-doped bismuth ferrite nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, A.; Banerjee, M. [Department of Physics, National Institute of Technology, Durgapur 713209 (India); Basu, S., E-mail: soumen.basu@phy.nitdgp.ac.in [Department of Physics, National Institute of Technology, Durgapur 713209 (India); Mukadam, M.D.; Yusuf, S.M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Pal, M. [CSIR-Central Glass & Ceramic Research Institute, Kolkata 700032 (India)

2015-07-15

An enhancement in multiferroic properties has been achieved for chemically prepared BFO nanoparticles by doping with erbium (Er). XRD along with electron microscopy study reveals the phase purity and nanocrystalline nature of BFO. Enhancement of both the magnetic moment and resistivity is observed by virtue of Er doping. The observed enhanced magnetic moment is considered to be associated with smaller crystallite whereas increase of resistivity may be attributed to a decrease of oxygen vacancies. Doping also display an improvement of leakage behaviour and dielectric constant in nanocrystalline BFO, reflected in well-developed P-E loop. In addition, large enhancement in magnetodielectric coefficient is observed because of Er doping. Therefore, the results provide interesting approaches to improve the multiferroic properties of BFO, which has great implication towards its applications. - Highlights: • Synthesis of pure Er-doped BFO nanoparticles by chemical route. • Large increase in magnetic moment and resistivity due to Er doping. • Er doping produce well developed P-E loop and enhance polarization. • Drastic increase in dielectric constant as well as magnetodielectric coefficient observes because of Er doping.

Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

KAUST Repository

Mula, Guido

2017-07-14

Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn\\'t be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

KAUST Repository

Mula, Guido; Printemps, Tony; Licitra, Christophe; Sogne, Elisa; D’ Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele; Ricci, Pier Carlo; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea

2017-01-01

Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

Yellow light emission from Ta2O5:Er, Eu, Ce thin films deposited using a simple co-sputtering method

Directory of Open Access Journals (Sweden)

K. Miura

2015-01-01

Full Text Available Erbium, europium, and cerium co-doped tantalum oxide (Ta2O5:Er, Eu, Ce thin films were prepared using a simple co-sputtering method, and yellow light emission was observed by the naked eye from a sample annealed at 900 °C for 20 min. The hexagonal Ta2O5 phase is very important, but the hexagonal CeTa7O19 phase should be avoided to obtain strong yellow light emission from Ta2O5:Er, Eu, Ce films. The co-sputtered films can be used as high-refractive-index and yellow-light-emitting materials of autocloned photonic crystals that can be applied to novel light-emission devices, and they will also be used as anti-reflection and down-conversion layers toward high-efficiency silicon solar cells.

Upconversion and pump saturation mechanisms in Er3+/Yb3+ co-doped Y2Ti2O7 nanocrystals

International Nuclear Information System (INIS)

Wang, Fengxiao; Song, Feng; Zhang, Gong; Han, Yingdong; Li, Qiong; Tian, Jianguo; Ming, Chengguo

2014-01-01

The Er 3+ /Yb 3+ co-doped Y 2 Ti 2 O 7 nanocrystals were synthesized by the sol–gel method. X-ray diffraction, transmission electronic microscopy, and photoluminescence spectra were measured to verify the Y 2 Ti 2 O 7 nanocrystalline produced in the sample annealed at 800 °C. The anomalous slopes of the fitted line in the log-log plots for upconversion emissions and the pump-saturation effect of near-infrared emission were observed in the nanocrystalline samples. A theoretical model of practical Er 3+ /Yb 3+ co-doped system based on the rate equations were put forward and explained the experimental phenomena well

Structural, optical and electrical properties of CeO2 thin films simultaneously prepared by anodic and cathodic electrodeposition

Science.gov (United States)

Yang, Yumeng; Du, Xiaoqing; Yi, Chenxi; Liu, Jiao; Zhu, Benfeng; Zhang, Zhao

2018-05-01

CeO2 thin films were deposited on stainless steel (SS) and indium tin oxide (ITO)-coated glass by simultaneous anodic and cathodic electrodeposition, and the influence of negative potential on the formation of ceria films was studied with scanning electron microscopy, X-ray diffraction, Raman spectroscopy, van der Pauw measurements, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that CeO2 films on the anode are slightly affected by the potential, but the particle size, crystal orientation, strain, film thickness, resistivity and Ce(III) content of the films on the cathode increases with increasing potential on the SS substrate. Contradictory to the results of the SS cathode, redshift (Ed changed from 3.95 eV to 3.56 eV and Ei changed from 3.42 eV to 3.04 eV) occurring in the absorption spectrum of CeO2 deposited on the ITO-coated glass cathode indicates that the content of Ce3+ in the cathodic films is dependent on the adopted substrates and decreases as the applied potential is increased.

Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Dung, Nguyen Duc [Advanced Institute of Science and Technology, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam)

2016-11-15

We report the characteristic photoluminescence (PL) spectra of erbium ion (Er{sup 3+})-doped tin dioxide (SnO{sub 2})nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er{sup 3+} ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO{sub 2} and its average particle diameter of approximately 5 nm did not change with Er{sup 3+} ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er{sup 3+} ions. The PL excitation spectra referred to an efficient energy transfer to Er{sup 3+} ions in the presence of SnO{sub 2}nanoparticles. The most intense Er-related emission of SnO{sub 2}:Er{sup 3+} nanoparticles in near infrared region was found in samples containing an Er{sup 3+} ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO{sub 2} nanoparticles.

Dopant induced variations in microstructure and optical properties of CeO2 nanoparticles

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Lee, Jong Won; Yeon, Deuk-Ho; Jo, Yeon-Hwa; Kim, Jong Hak; Cho, Yong Soo

2011-01-01

Research highlights: → Dopant (Zr 4+ , La 3+ , and Ca 2+ ) induced phase stability, and changes in microstructure and optical properties of CeO 2 nanoparticles have been studied. → The nanoparticles were prepared by hydrothermal synthesis of nitrate solutions. → The results show modification of the unit cell parameter by -0.39, +0.83 and +0.16% for doping of 20% Zr 4+ , La 3+ , and Ca 2+ , respectively. → For each batch prepared, nanoparticles with a narrow size distribution of 5-15 nm have been obtained. These particles are single crystals mostly having polygonal two-dimensional projections. → UV-visible spectra of doped particles exhibit shift of the absorption edge and absorption peak with respect to those of the undoped ones and has been attributed to compensation of Ce 3+ and decreasing crystallite size as result of doping. -- Abstract: Nanocrystalline CeO 2 particles doped in the range of 0-20% of Ca 2+ , La 3+ , and Zr 4+ have been prepared from hydrothermal synthesis of nitrate solutions at 200 o C and the influences of the dopants on microstructure and optical properties of the nanoparticles have been investigated. The unit cell parameter is found to be modified by -0.39, +0.83 and +0.16% for doping of 20% Zr 4+ , La 3+ , and Ca 2+ , respectively. For each batch prepared, nanoparticles with a narrow size distribution of 5-15 nm have been obtained. A high-resolution transmission electron microscopy investigation reveals that these particles are single crystals mostly having hexagonal, square or circular two-dimensional projections. UV-visible spectra of doped powders exhibit shift of the absorption edge and absorption peak with respect to those of the undoped CeO 2 particles and has been attributed to compensation of Ce 3+ and decreasing crystallite size as result of doping.

Cladding-pumped 70-kW-peak-power 2-ns-pulse Er-doped fiber amplifier

Science.gov (United States)

Khudyakov, M. M.; Bubnov, M. M.; Senatorov, A. K.; Lipatov, D. S.; Guryanov, A. N.; Rybaltovsky, A. A.; Butov, O. V.; Kotov, L. V.; Likhachev, M. E.

2018-02-01

An all-fiber pulsed erbium laser with pulse width of 2.4 ns working in a MOPA configuration has been created. Cladding pumped double clad erbium doped large mode area fiber was used in the final stage amplifier. Peculiarity of the current work is utilization of custom-made multimode diode wavelength stabilized at 981+/-0.5 nm - wavelength of maximum absorption by Er ions. It allowed us to shorten Er-doped fiber down to 1.7 m and keep a reasonably high pump-to signal conversion efficiency of 8.4%. The record output peak power for all-fiber amplifiers of 84 kW was achieved within 1555.9+/-0.15 nm spectral range.

Visible emission from Er-doped SnO2 thin films deposited by sol-gel Emissão no visível de filmes finos, depositados via sol-gel, de SnO2 dopados com Er

Directory of Open Access Journals (Sweden)

L. P. Ravaro

2007-06-01

Full Text Available Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green. Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.Foi obtida emissão de filmes finos de SnO2 dopados com Er no intervalo 500-700 nm, com pico em 530 nm (verde. Esses filmes foram depositados pela técnica de molhamento via sol-gel. A geração de pares elétron-buraco na matriz de SnO2 é usada para promover a excitação do íon terra-rara. A avaliação do tamanho dos cristalitos por meio de resultados de difração de raios X indica dimensões nanoscópicas, o que pode ser relevante para a interpretação do espectro de emissão. O mecanismo de excitação elétron-buraco é também responsável pela excitação da transição no intervalo que inclui 1540 nm em pós obtidos da mesma solução precursora dos filmes. Filmes finos constituem um formato muito útil para aplicações tecnológicas, desde que permite integração em dispositivos ópticos e a aplicação de campos elétricos para operar dispositivos eletroluminescentes.

Structural, optical and photo thermal properties of Er3+:Y2O3 doped PMMA nanocomposite

Science.gov (United States)

Tabanli, Sevcan; Eryurek, Gonul

2018-02-01

Thermal decomposition technique was employed to synthesize of phosphors of yttria (Y2O3) doped with erbium (Er3+) ions. After the synthesized procedure, the nano-sized crystalline powders were annealed at 800oC for 24 h. Annealed powders were embedded in poly(methyl methacrylate) (PMMA) by free radical polymerization to fabricate nanocomposite polymer materials. The crystalline structure of the powder and doped PMMA nanocomposite samples were determined using X-ray diffraction technique. Scherrer's equation and the FW1/5/4/5M method were used to determine average crystalline size and grain size distributions, respectively. The spectroscopic properties of the powders and doped PMMA nanocomposites were studied by measuring the upconversion emission spectra under near-infrared laser excitation at room temperature. The laser-induced photo thermal behaviors of Er3+:Y2O3 nano-powders and doped PMMA nanocomposite were investigated using the fluorescence intensity ratio (FIR) technique.

Local microstructure and photoluminescence of Er-doped 12CaO·7Al2O3 powder

Institute of Scientific and Technical Information of China (English)

WANG Dan; LIU Yuxue; XU Changshan; LIU Yichun; WANG Guorui; LI Xinghua

2008-01-01

Er-doped 12CaO·7Al2O3 (C12A7:Er) powders were prepared using the sol-gel method followed by annealing inorganic precursors. X-ray diffraction (XRD), Raman and absorption spectra revealed that Er ions existed and substituted Ca2+ lattice site in C12A7. The photoluminescence of C12A7:Er at room temperature was observed in the visible and infrared region using 488 nm (2.54 eV) Ar+ line as excitation source, respectively. The sharp and intense green emission bands with multi-peaks around 520 nm and 550 nm correspond to the transitions from the excited states 2H11/2 and 4S3/2 to the ground state 4I15/2, respectively. Furthermore, red emission band around 650 nm was also observed. It was attributed to the electronic transition from excited states 4F9/2 to the ground state 4I15/2 inside 4f-shell of Er3+ ions. The intensive infrared emission at 1.54μm was attributed to the transition from the first excited states of 4I13/2 to the ground state (4I15/2). The temperature dependent photoluminescence of infrared emission showed that the integrated intensity reached a maximum value at near room temperature. The forbidden transitions of intra-4f shell electrons in free Er3+ ions were allowed in C12A7 owing to lack of the inversion symmetry in the Er3+ position in C12A7 crystal field. Our results suggested that C12A7:Er was a candidate for applications in Er-doped laser materials, and full color display.

Structural and vibrational investigations of Nb-doped TiO2 thin films

International Nuclear Information System (INIS)

Uyanga, E.; Gibaud, A.; Daniel, P.; Sangaa, D.; Sevjidsuren, G.; Altantsog, P.; Beuvier, T.; Lee, Chih Hao; Balagurov, A.M.

2014-01-01

Highlights: • We studied the evolutions of structure for TiO 2 thin film as changes with Nb doping and temperatures. • Up to 800 °C, the grain size of Nb 0.1 Ti 0.9 O 2 is smaller than for pure TiO 2 because doped Nb hinders the growth of the TiO 2 grains. • There was no formation of the rutile phase at high temperature. • Nb doped TiO 2 films have high electron densities at 400–700 °C. • Nb dope extends the absorbance spectra of TiO 2 which leads to the band gap reduce. - Abstract: Acid-catalyzed sol–gel and spin-coating methods were used to prepare Nb-doped TiO 2 thin film. In this work, we studied the effect of niobium doping on the structure, surface, and absorption properties of TiO 2 by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), Raman, and UV–vis absorption spectroscopy at various annealing temperatures. EDX spectra show that the Nb:Ti atomic ratios of the niobium-doped titania films are in good agreement with the nominal values (5 and 10%). XPS results suggest that charge compensation is achieved by the formation of Ti vacancies. Specific niobium phases are not observed, thus confirming that niobium is well incorporated into the titania crystal lattice. Thin films are amorphous at room temperature and the formation of anatase phase appeared at an annealing temperature close to 400 °C. The rutile phase was not observed even at 900 °C (XRD and Raman spectroscopy). Grain sizes and electron densities increased when the temperature was raised. Nb-doped films have higher electron densities and lower grain sizes due to niobium doping. Grain size inhibition can be explained by lattice stress induced by the incorporation of larger Nb 5+ ions into the lattice. The band gap energy of indirect transition of the TiO 2 thin films was calculated to be about 3.03 eV. After niobium doping, it decreased to 2.40 eV

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Mechanoluminescence by impulsive deformation of γ-irradiated Er-doped CaF2 crystals

International Nuclear Information System (INIS)

Brahme, Nameeta; Shukla, Manju; Bisen, D.P.; Kurrey, U.; Choubey, Anil; Kher, R.S.; Singh, Manisha

2011-01-01

An impulsive technique has been used for mechanoluminescence (ML) measurements in γ-irradiated Er doped CaF 2 crystals. When the ML is excited impulsively by the impact of moving piston on to γ-irradiated CaF 2 :Er crystals, two peaks are observed in ML intensity with time and it is seen that the peak intensities of first and second peaks (I m1 and I m2 ) increase with increasing impact velocity. However the time corresponding to first and second peaks (t m1 and t m2 ) shifts towards shorter time values with increasing impact velocity. It is also seen that the total ML intensity I Total initially increases with the impact velocity and then it attains a saturation value for higher values of the impact velocity. We have presented a theoretical explanation for the observed results. - Research highlights: → Impulsive technique has been used for mechanoluminescence (ML) studies in γ-irradiated Er doped CaF 2 crystals. → ML intensity exhibited two peaks with time (I m1 and I m2 ), where the intensity of both the peaks increased with increasing impact velocity. → The time of occurrence of the peaks (t m1 and t m2 ) reduced with increasing the impact velocity. → Total ML intensity (I Total ) first increases and then attains a saturation value with an increment in the impact velocity. → A theoretical explanation is presented to the observed results.

Polarity driven morphology of CeO2(1 0 0) islands on Cu(1 1 1)

International Nuclear Information System (INIS)

Stetsovych, O.; Beran, J.; Dvořák, F.; Mašek, K.; Mysliveček, J.; Matolín, V.

2013-01-01

Thin ceria films supported by metal substrates represent important model systems for reactivity studies in heterogeneous catalysis. Here we report the growth study of the polar CeO 2 (1 0 0) phase as part of a mixed CeO 2 (1 1 1)–CeO 2 (1 0 0) thin film supported by Cu(1 1 1). The two ceria phases grow on different areas of the substrate, what allows a reliable growth characterization of the CeO 2 (1 0 0) islands on Cu(1 1 1). Scanning tunneling microscopy measurements reveal CeO 2 (1 0 0) to grow in the form of highly dispersed three dimensional (3D) islands on a CeO 2 (1 0 0) interfacial layer. The CeO 2 (1 0 0) islands exhibit a 2 × 2 surface reconstruction. The presence of the surface reconstruction together with the highly dispersed growth of CeO 2 (1 0 0) islands corresponds to the requirement for compensation of the surface dipole moment on the CeO 2 (1 0 0). CeO 2 (1 0 0) islands are further characterized by reflection high energy electron diffraction yielding their epitaxial relations with respect to the Cu(1 1 1) substrate. The growth of well characterized CeO 2 (1 0 0) islands supported by Cu(1 1 1) represents a starting point for developing a novel template for structure-related reactivity studies of ceria based model catalysts.

The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

KAUST Repository

Hong, Nguyenhoa

2013-10-04

We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity

Science.gov (United States)

Hartmanová, Mária; Nádaždy, Vojtech; Kundracik, František; Mansilla, Catina

2013-03-01

Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance-voltage and current-voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.

Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glasses

Energy Technology Data Exchange (ETDEWEB)

Epurescu, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)], E-mail: george@nipne.ro; Vlad, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Bodea, M.A. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Vasiliu, C. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dumitrescu, O. [University Politehnica of Bucharest, Faculty of Industrial Chemistry, Science and Engineering of Oxide Materials Department, Polizu Str. 1, sect. 1, Bucharest (Romania); Niciu, H. [National Institute of Glass, Department for Laser Glass Technology, 47 Th. Pallady Str., Sect.3, Bucharest (Romania); Elisa, M. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Siraj, K.; Pedarnig, J.D.; Baeuerle, D. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Filipescu, M.; Nedelcea, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Galca, A.C. [National Institute of Materials Physics, Atomistilor 105bis, P.O. Box MG 07, RO- 77125, Magurele (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)

2009-03-01

Thin films of complex oxides have been obtained by pulsed-laser deposition (PLD) from glass targets belonging to the system Li{sub 2}O-Al{sub 2}O{sub 3}-P{sub 2}O{sub 5}-(RE){sub 2}O{sub 3}, with RE = Nd, Pr, Er. The films were deposited on quartz, silicon and ITO/glass substrates using a F{sub 2} laser ({lambda} = 157 nm, {iota} {approx} 20 ns) for ablation in vacuum. The structural, morphological and optical properties of the oxide films were investigated through IR and UV-VIS spectroscopy, Atomic Force Microscopy (AFM), Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Spectroscopic Ellipsometry. The laser wavelength was found to be the key parameter to obtain thin films with very smooth surface. In this way new possibilities are opened to grow multilayer structures for photonic applications.

ROS mediated malignancy cure performance of morphological, optical, and electrically tuned Sn doped CeO2 nanostructures

Science.gov (United States)

Abbas, Fazal; Iqbal, Javed; Maqbool, Qaisar; Jan, Tariq; Ullah, Muhammad Obaid; Nawaz, Bushra; Nazar, Mudassar; Naqvi, M. S. Hussain; Ahmad, Ishaq

2017-09-01

To grapple with cancer, implementation of differentially cytotoxic nanomedicines have gained prime attention of the researchers across the globe. Now, ceria (CeO2) at nanoscale has emerged as a cut out therapeutic agent for malignancy treatment. Keeping this in view, we have fabricated SnxCe1-xO2 nanostructures by facile, eco-friendly, and biocompatible hydrothermal method. Structural examinations via XRD and FT-IR spectroscopy have revealed single phase cubic-fluorite morphology while SEM analysis has depicted particle size ranging 30-50nm for pristine and doped nanostructures. UV-Vis spectroscopy investigation explored that Sn doping significantly tuned the band gap (eV) energies of SnxCe1-xO2 nanostructures which set up the base for tremendous cellular reactive oxygen species (ROS) generations involved in cancer cells' death. To observe cytotoxicity, synthesized nanostructures were found selectively more toxic to neuroblastoma cell lines as compared to HEK-293 healthy cells. This study anticipates that SnxCe1-xO2 nanostructures, in future, might be used as nanomedicine for safer cancer therapy.

ROS mediated malignancy cure performance of morphological, optical, and electrically tuned Sn doped CeO2 nanostructures

Directory of Open Access Journals (Sweden)

Fazal Abbas

2017-09-01

Full Text Available To grapple with cancer, implementation of differentially cytotoxic nanomedicines have gained prime attention of the researchers across the globe. Now, ceria (CeO2 at nanoscale has emerged as a cut out therapeutic agent for malignancy treatment. Keeping this in view, we have fabricated SnxCe1-xO2 nanostructures by facile, eco-friendly, and biocompatible hydrothermal method. Structural examinations via XRD and FT-IR spectroscopy have revealed single phase cubic-fluorite morphology while SEM analysis has depicted particle size ranging 30-50nm for pristine and doped nanostructures. UV-Vis spectroscopy investigation explored that Sn doping significantly tuned the band gap (eV energies of SnxCe1-xO2 nanostructures which set up the base for tremendous cellular reactive oxygen species (ROS generations involved in cancer cells’ death. To observe cytotoxicity, synthesized nanostructures were found selectively more toxic to neuroblastoma cell lines as compared to HEK-293 healthy cells. This study anticipates that SnxCe1-xO2 nanostructures, in future, might be used as nanomedicine for safer cancer therapy.

Defect Study of MgO-CaO Material Doped with CeO2

Directory of Open Access Journals (Sweden)

Han Zhang

2013-01-01

Full Text Available MgO-CaO refractories were prepared using analytical reagent chemicals of Ca(OH2 and Mg(OH2 as starting materials and CeO2 as dopant, then sintered at 1650°C for 3 h. The effect of CeO2 powders on the defect of MgO-CaO refractories was investigated. The sample characterizations were analyzed by the techniques of XRD and SEM. According to the results, with the addition of CeO2, the lattice constant of CaO increased, and the bulk density of the samples increased while apparent porosity decreased. The densification of MgO-CaO refractories was promoted obviously. In the sintering process, MgO grains grew faster than CaO, pores at the MgO-CaO grain boundaries decreased while pores in the MgO grains increased gradually, and no pores were observed in the CaO grains. The nature of the CeO2 promoting densification lies in the substitution and solution with CaO. Ce4+ approaches into CaO lattices, which enlarges the vacancy concentration of Ca2+ and accelerates the diffusion of Ca2+.

Spectroscopic properties of Er/Nd co-doped yttrium lanthanum oxide transparent ceramics pumped at 980 nm

Energy Technology Data Exchange (ETDEWEB)

Shao, Yingjie; Yang, Qiuhong, E-mail: yangqiuhong@shu.edu.cn; Gui, Yan; Yuan, Ye; Lu, Qing

2016-05-15

(Er{sub 0.01}Nd{sub x}Y{sub 0.89-x}La{sub 0.1}){sub 2}O{sub 3} (x = 0, 0.001, 0.002, 0.005, 0.01) transparent ceramics were prepared by conventional ceramic processing. The Nd{sup 3+} content dependencies of mid-infrared, near infrared and up-conversion emission of Er{sup 3+} pumped at 980 nm were fully presented. Mechanism of energy transfer between Er{sup 3+} and Nd{sup 3+} was also demonstrated. The results showed that co-doping 0.1 at% Nd{sup 3+} into 1 at% Er{sup 3+} doped yttrium lanthanum oxide transparent ceramic enhanced the 2.7 μm emission significantly and meanwhile suppressed the 1.5 μm emission effectively which indicated an improvement in population inversion between Er:{sup 4}I{sub 11/2} and Er:{sup 4}I{sub 13/2}. Moreover, green up-conversion emission of Er{sup 3+} ion also showed a great improvement by co-doping 0.1 at% Nd{sup 3+}. Those great results were attributed to energy recycle from Er:{sup 4}I{sub 13/2} to Er:{sup 4}I{sub 11/2}. The energy recycle was mainly built by the two energy transfer between Er{sup 3+} and Nd{sup 3+} (one is from Er to Nd, another is in opposite way). So, Er/Nd co-doped yttrium lanthanum oxide transparent ceramic with Nd in low concentration can be considered as a promising laser material for ∼3 μm and up-conversion laser application. - Highlights: • (Er{sub 0.01}Nd{sub x}Y{sub 0.89-x}La{sub 0.1}){sub 2}O{sub 3} transparent ceramics were prepared. • The emission of 2.7 μm of Er{sup 3+} ion was significantly enhanced as x was 0.001. • The emission of 1.5 μm of Er{sup 3+} ion was suppressed greatly by co-doping Nd{sup 3+} ion. • Mechanism of Er–Nd energy transfer was discussed by the energy sketch.

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

International Nuclear Information System (INIS)

Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

2001-01-01

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

Elevated transition temperature in Ge doped VO2 thin films

Science.gov (United States)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

2014-07-25

Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

High multi-photon visible upconversion emissions of Er3+ singly doped BiOCl microcrystals: A photon avalanche of Er3+ induced by 980 nm excitation

International Nuclear Information System (INIS)

Li, Yongjin; Song, Zhiguo; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi

2013-01-01

Under 980 nm excitation, high multi-photon upconversion (UC) emission from the 2 H 11/2 / 4 S 3/2 (green) and 4 F 9/2 (red) levels of Er 3+ ions were observed from Er 3+ singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er 3+ ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er 3+ ions doping

Luminescent and morphological study of Sr2CeO4 blue phosphor prepared from oxalate precursors

International Nuclear Information System (INIS)

Ferrari, Jefferson L.; Pires, Ana M.; Serra, Osvaldo A.; Davolos, Marian R.

2011-01-01

Luminescent and morphological studies of Sr 2 CeO 4 blue phosphor prepared from cerium-doped strontium oxalate precursor are reported. Powder samples were prepared from 5 and 25 mol% Ce 3+ -doped strontium oxalate as well as from a mechanical mixture of strontium oxalate and cerium oxalate at a 4:1 ratio, respectively. All the samples were characterized by XRD, IR, PLS, and SEM. The luminescent and structural properties of the Sr 2 CeO 4 material are little affected by the SrCO 3 remaining from precursors. The Sr 2 CeO 4 material consists in one-dimensional chains of edge-sharing CeO 6 octahedra that are linked together by Sr 2+ ions. The carbonate ion might be associated with oxygen ions of the linear chain, and also with the oxygen atoms located in the equatorial position, which consequently affects the charge transfer bands between O 2- and Ce 4+ . As observed by SEM, the morphological changes are related to each kind of precursor and thermal treatment, along with irregular powder particles within the size range 0.5-2 μm.

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

Science.gov (United States)

Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

2013-01-08

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

Planar waveguide laser in Er/Al-doped germanosilicate

DEFF Research Database (Denmark)

Guldberg-Kjær, Søren Andreas; Hübner, Jörg; Kristensen, Martin

1999-01-01

A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations.......A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations....

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

Science.gov (United States)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Raman and Fluorescence Spectroscopy of CeO2, Er2O3, Nd2O3, Tm2O3, Yb2O3, La2O3, and Tb4O7

Directory of Open Access Journals (Sweden)

Jianlan Cui

2015-01-01

Full Text Available To better understand and ascertain the mechanisms of flotation reagent interaction with rare earth (RE minerals, it is necessary to determine the physical and chemical properties of the constituent components. Seven rare earth oxides (CeO2, Er2O3, Nd2O3, Tm2O3, Yb2O3, La2O3, and Tb4O7 that cover the rare earth elements (REEs from light to heavy REEs have been investigated using Raman spectroscopy. Multiple laser sources (wavelengths of 325 nm, 442 nm, 514 nm, and 632.8 nm for the Raman shift ranges from 100 cm−1 to 5000 cm−1 of these excitations were used for each individual rare earth oxide. Raman shifts and fluorescence emission have been identified. Theoretical energy levels for Er, Nd, and Yb were used for the interpretation of fluorescence emission. The experimental results showed good agreement with the theoretical calculation for Er2O3 and Nd2O3. Additional fluorescence emission was observed with Yb2O3 that did not fit the reported energy level diagram. Tb4O7 was observed undergoing laser induced changes during examination.

Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

Radiation hardening in sol-gel derived Er3+-doped silica glasses

International Nuclear Information System (INIS)

Hari Babu, B.; León Pichel, Mónica; Ollier, Nadège; El Hamzaoui, Hicham; Bigot, Laurent; Savelii, Inna; Bouazaoui, Mohamed; Poumellec, Bertrand; Lancry, Matthieu; Ibarra, Angel

2015-01-01

The aim of the present paper is to report the effect of radiation on the Er 3+ -doped sol-gel silica glasses. A possible application of these sol-gel glasses could be their use in harsh radiation environments. The sol-gel glasses are fabricated by densification of erbium salt-soaked nanoporous silica xerogels through polymeric sol-gel technique. The radiation-induced attenuation of Er 3+ -doped sol-gel silica is found to increase with erbium content. Electron paramagnetic resonance studies reveal the presence of E′ δ point defects. This happens in the sol-gel aluminum-silica glass after an exposure to γ-rays (kGy) and in sol-gel silica glass after an exposure to electrons (MGy). The concentration levels of these point defects are much lower in γ-ray irradiated sol-gel silica glasses. When the samples are co-doped with Al, the exposure to γ-ray radiation causes a possible reduction of the erbium valence from Er 3+ to Er 2+ ions. This process occurs in association with the formation of aluminum oxygen hole centers and different intrinsic point defects

Bi-epitaxial YBa2Cu3Ox Thin Films on Tilted-axes NdGaO3 Substrates with CeO2 Seeding Layer

International Nuclear Information System (INIS)

Mozhaev, P B; Mozhaeva, J E; Jacobsen, C S; Hansen, J Bindslev; Bdikin, I K; Luzanov, V A; Kotelyanskii, I M; Zybtsev, S G

2006-01-01

Bi-epitaxial YBa 2 Cu 3 O x (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27 0 were manufactured using pulsed laser deposition on NdGaO 3 tilted-axes substrates with CeO 2 seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed

Highly scalable, resonantly cladding-pumped, Er-doped fiber laser with record efficiency.

Science.gov (United States)

Dubinskii, M; Zhang, J; Ter-Mikirtychev, V

2009-05-15

We report the performance of a resonantly cladding-pumped, Yb-free, Er-doped fiber laser. We believe this is the first reported resonantly cladding-pumped fiber-Bragg-grating-based, Er-doped, large-mode-area (LMA) fiber laser. The laser, pumped by fiber-coupled InGaAsP/InP laser diode modules at 1,532.5 nm, delivers approximately 48 W of cw output at 1,590 nm. It is believed to be the highest power ever reported from a Yb-free Er-doped LMA fiber. This fully integrated laser also has the optical-to-optical efficiency of approximately 57%, to the best of our knowledge, the highest efficiency reported for cladding-pumped unidirectionally emitting Er-doped laser.

Effect of Er doping on optical transmission and EL spectra of (Zn, Cd)S:Cu phosphors

International Nuclear Information System (INIS)

Patil, P.K.; Nandgave, J.K.; Lawangar Pawar, R.D.

1991-01-01

Powder phosphors((Znsub(0.4)Cdsub(0.6))S)doped with Cu and Er have been prepared under the inert atmosphere of argon. The optical transmission spectra of Cu doped phosphors have been investigated and explained on the basis of copper associated defect states. The improvement of optical transmission of the phosphors due to Er doping has been reported and explained. The EL emission spectrum of (Znsub(0.4)Cdsub(0.6))S:Cu:Er phosphors exhibits two broad bands characteristic of Cu. The absence of characteristic Er bands has been explained as an effect of thermal quenching of Er donor levels. (author). 9 refs., 2 figs

Epitaxial growth of Er, Ti doped LiNbO3 films prepared by sol-gel method

International Nuclear Information System (INIS)

Takahashi, Makoto; Yoshiga, Tsuyoshi; Kajitani, Naofumi; Takeda, Yuki; Sato, Shoji; Wakita, Koichi; Ohnishi, Naoyuki; Hotta, Kazutoshi; Kurachi, Masato

2006-01-01

Erbium (Er 3+ ) doped lithium niobate (LiNbO 3 ) thick films were deposited on z-cut congruent LiNbO 3 (LN) substrate by the sol-gel method from the 0.20 mol/dm 3 precursor solution containing various Er 3+ concentration and 0.10 mol/dm 3 poly(vinyl alcohol) (PVA), and their crystal characteristics were evaluated. The Er 3+ concentration in the LN film was controlled by the Er 3+ concentration in the starting solution. The orientation relationships between Er doped LN films and substrates were determined by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and (006) oriented Er doped LN epitaxial layers with parallel epitaxial relationships could be grown on the z-cut LN wafer. Moreover, it was made clear from the electron beam diffraction measurements that the film came to be polycrystalline, when the Er concentration was over 3 mol%. The refractive index of Er-doped LN films decreased with increasing Er concentration. 1.5 mol% Ti: 1.0 mol% Er LN films, which acted as a waveguide, were prepared by our so-gel method. It showed the 1530 nm emission by 980 nm excitation, which was considered to be due to the Er 3+ corresponding to the 4 I 13/2 → 4 I 15/2 transition. (author)

Luminescence of Er3+ doped double lead halide crystals under X-ray, UV, VIS and IR excitation

Science.gov (United States)

Serazetdinov, A. R.; Smirnov, A. A.; Pustovarov, V. A.; Isaenko, L. I.

2017-09-01

Er3+ doped double lead halide crystals incorporate a number of properties making them interesting for practical use in light conducting materials. X-ray excited luminescence (XRL) spectra, photoluminescence (PL) spectra in region of 1.5-3.5 eV, photoluminescence excitation (PLE) spectra (2.75-5 eV) and anti-stokes luminescence (ASL) spectra were measured at room temperature in KPb2Cl5 (KPC) and RbPb2Br5 (RPB) matrices doped with Er3+ (1%) ions and in KPC doped with Er3++ Yb3+ ions(1:3 ratio concentration). Intraconfigurational f→f transitions are observed in Er3+ ions in most of the cases. The concrete spectrum form is strongly dependent on the excitation energy. Under 980 nm excitation upper Er3+ levels are excited, showing upconversional processes. In case of 313 nm (UV) and 365 nm (VIS) excitation self trapped exciton luminescence was detected in RPB crystal. Additional Yb3+ doping ions strongly increase quantum yield under 980 nm excitation and this doping cause insignificant influence on quantum yield under VIS or UV excitation.

Spatially selective Er/Yb-doped CaF2 crystal formation by CO2 laser exposure

International Nuclear Information System (INIS)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo

2014-01-01

Highlights: • Oxyfluoride glass–ceramics containing CaF 2 nanocrystals doped with Er 3+ and Yb 3+ ions were formed on the glass surface by CO 2 laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF 2 nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO 2 laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF 2 and miner Ca 2 SiO 4 nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment

Spatially selective Er/Yb-doped CaF2 crystal formation by CO2 laser exposure

International Nuclear Information System (INIS)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo

2015-01-01

Highlights: • Oxyfluoride glass–ceramics containing CaF 2 nanocrystals doped with Er 3+ and Yb 3+ ions were formed on the glass surface by CO 2 laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF 2 nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO 2 laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF 2 and miner Ca 2 SiO 4 nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment

Structural, thermal and spectroscopic properties of highly Er3+-doped novel oxyfluoride glasses for photonic application

Energy Technology Data Exchange (ETDEWEB)

Kesavulu, C.R. [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Sreedhar, V.B.; Jayasankar, C.K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Jang, Kiwan [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo, E-mail: ssyi@silla.ac.kr [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of)

2014-03-01

Graphical abstract: - Highlights: • Er{sup 3+}-doped novel oxyfluoride glasses have been prepared by melt quenching technique. • Structural, thermal and spectroscopic properties have been carried out. • SALSFEr glasses exhibit intense green and weak red emissions at 365 nm excitation. • Major laser transition for Er{sup 3+} ion in SALSFEr glasses is {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} (1.53 μm). • These results suggest the possibility of using SALSFEr glasses as photonic devices. - Abstract: The Er{sup 3+}-doped novel oxyfluoride glasses of composition (43 − x)SiO{sub 2}–10Al{sub 2}O{sub 3}–24LiF–23SrF{sub 2}–xEr{sub 2}O{sub 3}, where x = 1.0, 2.0, 4.0 and 6.0 mol%, have been prepared by conventional melt quenching technique and are characterized through X-ray diffraction (XRD), differential thermal analysis (DTA), Raman, Fourier transform infrared (FT-IR) analysis, optical absorption spectra, visible (vis) and near-infrared (NIR) emission spectra measurements. Judd–Ofelt (JO) intensity parameters (Ω{sub λ}, λ = 2, 4 and 6) have been derived from the absorption spectrum of 1.0 mol% Er{sub 2}O{sub 3} doped glass and are in turn used to calculate radiative properties for the important luminescent levels of Er{sup 3+} ions. The studied glasses show intense green and weak red visible emissions under 365 nm excitation. The decrease in visible emission intensities with concentration of Er{sup 3+} ions has been explained due to energy transfer processes between Er{sup 3+} ions. Upon excitation at 980 nm laser diode, an intense 1.53 μm NIR emission has been observed with the maximum full width at half maximum (FWHM) for Er{sup 3+}-doped oxyfluoride glasses. The higher Er{sup 3+} ion doping capability and relatively high gain and broad emission at 1.5 μm are the most notable features of these glasses to realize efficient short-length optical amplifiers.

Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

Science.gov (United States)

Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

2017-08-01

A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

Science.gov (United States)

Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

2014-04-01

In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

Infrared emissions in MgSrAl10O17:Er3+ phosphor co-doped with Yb3+/Ba2+/Ca2+ obtained by solution combustion route

International Nuclear Information System (INIS)

Singh, Vijay; Kumar Rai, Vineet; Venkatramu, V.; Chakradhar, R.P.S.; Hwan Kim, Sang

2013-01-01

An intense infrared emitting MgSrAl 10 O 17 :Er 3+ phosphor co-doped with Yb 3+ , Ba 2+ and Ca 2+ ions have been prepared by a solution combustion method. Phase purity of the derived compounds was confirmed by X-ray diffraction technique. The vibrational properties of MgSrAl 10 O 17 phosphor was studied by Fourier transform infrared spectroscopy. The broad and strong infrared emission of Er 3+ ions at around 1.53 μm was observed upon excitation at 980 nm. Effect of co-doping with the Yb 3+ , Ba 2+ and Ca 2+ ions on the infrared luminescence intensity of Er 3+ ions and the mechanism responsible for the variation in the infrared intensity have been discussed. The results indicate that these materials may be suitable for the optical telecommunication window and wavelength division multiplexing applications. - Highlights: ► The hexagonal phase of MgSrAl 10 O 17 could be obtained by the low temperature combustion method. ► The broad and strong infrared emission of Er 3+ ions at around 1.53 μm was observed. ► Effect of co-doping with the Yb 3+ , Ba 2+ and Ca 2+ ions on the infrared luminescence intensity of Er 3+ were reported.

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Photocatalytic degradation mechanisms of self-assembled rose-flower-like CeO2 hierarchical nanostructures

International Nuclear Information System (INIS)

Sabari Arul, N.; Mangalaraj, D.; Whan Kim, Tae

2013-01-01

Hierarchical rose-flower-like CeO 2 nanostructures were formed by using solvothermal and thermal annealing processes. The CeCO 3 OH thin film was transformed into CeO 2 roses due to thermal annealing. CeO 2 nanostructured roses exhibited excellent photocatalytic activity with a degradation rate of 65% for the azo dye acid orange 7 (AO7) under ultraviolet illumination. The fitting of the absorbance maximum versus time showed that the degradation of AO7 obeyed pseudo-first-order reaction kinetics. The enhancement of the photocatalytic activity for the CeO 2 roses was attributed to the high adsorptivity resulting from the surface active sites and special 4f electron configuration.

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

Institute of Scientific and Technical Information of China (English)

Mehdi Ahmadi; Sajjad Rashidi Dafeh; Samaneh Ghazanfarpour; Mohammad Khanzadeh

2017-01-01

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester (PCBM).1％ vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method.Crystalline structure,morphology,and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction,scanning electron microscopy,transmittance electron microscopy,and UV-visible transmission spectrum.The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm.The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm.The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart.In the cells using 60 nm pure and vanadium-doped TiO2 layers,the cell using the doped layer showed much higher efficiency.It is remarkable that the extemal quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths.

Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass for waveguide amplifier application

International Nuclear Information System (INIS)

Zhao Shilong; Wang Xiuli; Fang Dawei; Xu Shiqing; Hu Lili

2006-01-01

Tungsten-tellurite glass with molar composition of 60TeO 2 -30WO 3 -10Na 2 O has been investigated for developing planar broadband waveguide amplifier application. Spectroscopic properties and thermal stability of Er 3+ -doped tungsten-tellurite glass have been discussed. The results show that the introduction of WO 3 increases significantly the glass transition temperature and the maximum phonon energy. Er 3+ -doped tungsten-tellurite glass exhibits high glass transition temperature (377 deg. C), large emission cross-section (0.91 x 10 -20 cm 2 ) at 1532 nm and broad full width at half maximum (FWHM), which make it preferable for broadband Er 3+ -doped waveguide amplifier application

Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

2016-11-30

Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

Science.gov (United States)

Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

2018-05-01

Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

Relationship between vortex pinning properties and microstructure in Ba–Nb–O-doped YBa2Cu3Oy and ErBa2Cu3Oy films

International Nuclear Information System (INIS)

Haruta, Masakazu; Saura, Keisuke; Fujita, Natsuto; Ogura, Yuta; Ichinose, Ataru; Maeda, Toshihiko; Horii, Shigeru

2013-01-01

Highlights: •Y123 and Er123 films with Ba–Nb–O nanorods were prepared by PLD. •Nanorod morphology depended on growth temperature (T s ). •Nanorod morphology was different between the Y123 and Er123 with the same T s . •Distribution of local J c depended on nanorod morphology. -- Abstract: In-field J c s were improved by introducing Ba–Nb–O (BNO)-nanorods in YBa 2 Cu 3 O y (Y123) and ErBa 2 Cu 3 O y (Er123) films. Retention of J c against the magnetic field for the BNO-doped Er123 film was superior to that for the BNO-doped Y123 film. Sharp distribution of local critical current density originating from vortex pinning by nanorods with uniform morphology was demonstrated in the Er123 film. On the other hand, fluctuating microstructures of nanorods formed in the Y123 film prepared by the same deposition conditions. Moreover, different growth temperature dependences of nanorod morphology between the Y123 and Er123 films were clarified

Photoluminescence of rare-earth ion (Eu3+, Tm3+, and Er3+)-doped and co-doped ZnNb2O6 for solar cells

Science.gov (United States)

Gao, Sen-Pei; Qian, Yan-Nan; Wang, Biao

2015-08-01

Visible converted emissions produced at an excitation of 286 nm in ZnNb2O6 ceramics doped with rare-earth ions (RE = Eu3+, Tm3+, Er3+ or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:ZnNb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped ZnNb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared NbO6 groups. Upon 286-nm excitation, Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of 5D0 → 7FJ (J = 1-4) (Eu3+), 1G4 → 3H6 (Tm3+), and 2H11/2/4S3/2 → 4I15/2 (Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 are (0.50, 0.31), (0.14, 0.19), and (0.29, 0.56), respectively. RE ion-co-doped ZnNb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:ZnNb2O6, Eu/Er:ZnNb2O6, and Tm/Er:ZnNb2O6 were calculated to be (0.29, 0.24), (0.45, 0.37), and (0.17, 0.25). Project supported by the National Natural Science Foundation of China (Grant Nos. 10572155 and 10732100) and the Research Fund for the Doctoral Program of Ministry of Education, China (Grant No. 20130171130003).

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

International Nuclear Information System (INIS)

Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

2014-01-01

Stable n-doping of WSe 2 using thin films of SiN x deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN x act to dope WSe 2 thin flakes n-type via field-induced effect. The electron concentration in WSe 2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN x through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe 2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe 2 n-MOSFETs with a mobility of ∼70 cm 2 /V s

Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO{sub 2} thin film

Energy Technology Data Exchange (ETDEWEB)

Rasoulnezhad, Hossein [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Kavei, Ghassem, E-mail: kaveighassem@gmail.com [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Ahmadi, Kamran [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Rahimipour, Mohammad Reza [Ceramic Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of)

2017-06-30

Highlights: • Combination of sonochemical and CVD methods for preparation of nanostructured carbon-doped TiO{sub 2} thin film on glass substrate, for the first time. • High transparency, monodispersity and homogeneity of the prepared thin films. • Preparation of the carbon-doped TiO{sub 2} thin films with nanorod and nanosphere morphologies. - Abstract: The present work reports the successful synthesis of the nanostructured carbon-doped TiO{sub 2} thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO{sub 2} sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO{sub 2} thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO{sub 2} to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

Photon up-converting (Yb,Er){sub 2}O{sub 3} thin films by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tuomisto, Minnea [Department of Chemistry, University of Turku (Finland); Doctoral Programme in Physical and Chemical Sciences, University of Turku Graduate School (UTUGS), Turku (Finland); Giedraityte, Zivile; Karppinen, Maarit [Department of Chemistry and Materials Science, School of Chemical Engineering, Aalto University (Finland); Lastusaari, Mika [Department of Chemistry, University of Turku (Finland); Turku University Centre for Materials and Surfaces (MatSurf), Turku (Finland)

2017-06-15

We report up-converting (Yb,Er){sub 2}O{sub 3} thin films grown with the atomic layer deposition (ALD) technique. The films are crystalline and show a homogeneous morphology with a roughness less than 1 nm for 40 nm thick films. High-intensity near-infrared (NIR) to green and red two-photon up-conversion emission is obtained with 974 nm excitation through an absorption by Yb{sup 3+}, followed by a Yb{sup 3+}-Er{sup 3+} energy transfer and emission from Er{sup 3+}. The ALD technique promises to be excellent for producing up-converting films for many applications such as near-infrared radiation absorbing layers for solar cells and sensors in point-of-care biomedical diagnostics. Schematic picture of the ALD-grown (Yb,Er){sub 2}O{sub 3} thin film including the up-conversion emission spectra. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High power density cell using nanostructured Sr-doped SmCoO3 and Sm-doped CeO2 composite powder synthesized by spray pyrolysis

Science.gov (United States)

Shimada, Hiroyuki; Yamaguchi, Toshiaki; Suzuki, Toshio; Sumi, Hirofumi; Hamamoto, Koichi; Fujishiro, Yoshinobu

2016-01-01

High power density solid oxide electrochemical cells were developed using nanostructure-controlled composite powder consisting of Sr-doped SmCoO3 (SSC) and Sm-doped CeO2 (SDC) for electrode material. The SSC-SDC nano-composite powder, which was synthesized by spray pyrolysis, had a narrow particle size distribution (D10, D50, and D90 of 0.59, 0.71, and 0.94 μm, respectively), and individual particles were spherical, composing of nano-size SSC and SDC fragments (approximately 10-15 nm). The application of the powder to a cathode for an anode-supported solid oxide fuel cell (SOFC) realized extremely fine cathode microstructure and excellent cell performance. The anode-supported SOFC with the SSC-SDC cathode achieved maximum power density of 3.65, 2.44, 1.43, and 0.76 W cm-2 at 800, 750, 700, and 650 °C, respectively, using humidified H2 as fuel and air as oxidant. This result could be explained by the extended electrochemically active region in the cathode induced by controlling the structure of the starting powder at the nano-order level.

Synthesis of Er and Er : Yb doped sol–gel derived silica glass and ...

Indian Academy of Sciences (India)

Unknown

Materials Science Centre, †Central Research Facility, Optical Fibre Unit, Indian Institute of Technology,. Kharagpur 721 302, India. MS received 1 March 2004; revised 4 July 2004. Abstract. Er3+ and Er3+ : Yb3+ doped optical quality, crack and bubble free glasses for possible use in mak- ing laser material have been ...

Cooperative upconversion as the gain-limiting factor in Er doped miniature Al2O3 optical waveguide amplifiers

International Nuclear Information System (INIS)

Kik, P.G.; Polman, A.

2003-01-01

Erbium doped Al 2 O 3 waveguide amplifiers were fabricated using two different doping methods, namely Er ion implantation into sputter deposited Al 2 O 3 , and co-sputtering from an Er 2 O 3 /Al 2 O 3 target. Although the Er concentration in both materials is almost identical (0.28 and 0.31 at. %), the amplifiers show a completely different behavior. Upon pumping with 1.48 μm, the co-sputtered waveguide shows a strong green luminescence from the 4 S 3/2 level, indicating efficient cooperative upconversion in this material. This is confirmed by pump power dependent measurements of the optical transmission at 1.53 μm and the spontaneous emission at 1.53 and 0.98 μm. All measurements can be accurately modeled using a set of rate equations that include first order and second order cooperative upconversion. The first order cooperative upconversion coefficient C 24 is found to be 3.5x10 -16 cm 3 s -1 in the co-sputtered material, two orders of magnitude higher than the value obtained in Er implanted Al 2 O 3 of 4.1x10 -18 cm 3 s -1 . It is concluded that the co-sputtering process results in a strongly inhomogeneous atomic scale spatial distribution of the Er ions. As a result, the co-sputtered waveguides do not show optical gain, while the implanted waveguides do

Electrochemical doping of mesoporous silicon with Er: the effect of the current intensity

Energy Technology Data Exchange (ETDEWEB)

Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Pinna, Elisa [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d’Armi, 09126 Cagliari (Italy)

2014-08-30

Graphical abstract: - Highlights: • A multidisciplinary approach on porous Si electrochemical Er doping is proposed. • The phenomena taking place at the large developed surface of porous silicon are studied. • Electrochemical, optical and structural characterizations are used. • The early stages of doping are studied by electrochemical impedance spectroscopy. • The dependence of the final amount of Er deposited on the current intensity and not only on the transferred charge is shown. - Abstract: There is an ongoing intense research for cost-effective Er-doped Si-based light-emitting devices at the 1.5 μm wavelength. The efficient electrochemical Er-doping of porous silicon for this purpose requires a good understanding of the phenomena involved, since those taking place at the pores inner surface control the doping process. However, almost no attention has been given, to date, to the relevant effects of the current intensity onto the doping results. In this work, the effect of the current intensity on the doping process is explored by means of electrochemical impedance spectroscopy, optical reflectivity and energy dispersive spectrometry via scanning electron microscopy. The combined analysis of all results strongly suggests that the formation of a gel-like Er ethanolate, unaffected by changes in the sample thickness, occurs from the very first stages of the doping process. Moreover, while for constant current doping processes we show that, under any given doping condition, the doping level is proportional to the transferred charge, we demonstrate that performing the doping process using different current intensities may lead to dramatically different results.

High multi-photon visible upconversion emissions of Er{sup 3+} singly doped BiOCl microcrystals: A photon avalanche of Er{sup 3+} induced by 980 nm excitation

Energy Technology Data Exchange (ETDEWEB)

Li, Yongjin; Song, Zhiguo, E-mail: songzg@kmust.edu.cn; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2013-12-02

Under 980 nm excitation, high multi-photon upconversion (UC) emission from the {sup 2}H{sub 11/2}/{sup 4}S{sub 3/2} (green) and {sup 4}F{sub 9/2} (red) levels of Er{sup 3+} ions were observed from Er{sup 3+} singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er{sup 3+} ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er{sup 3+} ions doping.

Methylene blue photocatalytic mineralization under visible irradiation on TiO{sub 2} thin films doped with chromium

Energy Technology Data Exchange (ETDEWEB)

Diaz-Uribe, Carlos; Vallejo, William, E-mail: williamvallejo@mail.uniatlantico.edu.co; Ramos, Wilkendry

2014-11-15

Graphical abstract: - Highlights: • We used an easy and inexpensive technique to dope thin films of TiO{sub 2}. • We proved that hydroxyl radicals were generated under visible light irradiation by Cr:TiO{sub 2}. • We used a Haber–Weiss reaction through Cr:TiO{sub 2} catalyst to improve the photo-mineralization process. - Abstract: We studied changes in structural, optical and photocatalytic properties of TiO{sub 2} thin films due to doping process with chromium. Powders of undoped TiO{sub 2} and chromium-doped TiO{sub 2} (Cr:TiO{sub 2}) were synthesized by sol–gel method and, thin films were deposited by doctor blade method. The properties of the thin films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR) and diffuse reflectance. The XRD patterns indicated that doping process changed the crystalline phases radio of TiO{sub 2} thin films, furthermore, the optical analysis showed that band gap value of Cr:TiO{sub 2} thin films was 31% fewer than undoped TiO{sub 2} thin films. Along, Langmuir–Hinshelwood model was used to obtain kinetic information of the photo-mineralization process; results indicated that photocatalytic activity of Cr:TiO{sub 2} thin films were four times better than undoped TiO{sub 2} thin films; finally the synergic effect was tested by addition of the H{sub 2}O{sub 2}, photocatalytic yield was improved from 26% to 61% when methylene blue photo-mineralization was assisted with slightly amount of H{sub 2}O{sub 2}.

UV light-induced thermoluminescence of Er + Li doped ZrO2

International Nuclear Information System (INIS)

Hristov, H; Arhangelova, N; Velev, V; Penev, I; Bello, M; Moschini, G; Uzunov, N

2010-01-01

Analysis of the thermoluminescence (TL) properties of ZrO 2 doped with Eu and Li has been conducted. Different quantities of lithium co-dopant have been added as Li 2 CO 3 to a mixture of ZrO 2 with 1wt% Er. Pellets sintered at a temperature of 1200 0 C have been prepared and the kinetic parameters of the phosphors have been studied after irradiation with UV light. It has been shown that the addition of 8 to 10 wt% of Li to the mixture of ZrO 2 with 1wt% Er yields a maximum intensity of the peaks at 65 0 C and at 105 0 C. Spectral emission and spectral sensitivity of the phosphors have been studied. The analysis applied to TL glow curves, obtained from the UV irradiated phosphors and kept after the irradiation at different times in a dark storage, revealed that the peaks at 65 0 C and 105 0 C have relatively long fading. It is concluded that the phosphors thus obtained possess a good sensitivity to the UV emission and could be appropriate phosphors for detection and quantitative measurements of UV light.

Dose-Dependent Effects of CeO2 on Microstructure and Antibacterial Property of Plasma-Sprayed TiO2 Coatings for Orthopedic Application

Science.gov (United States)

Zhao, Xiaobing; Liu, Gaopeng; Zheng, Hai; Cao, Huiliang; Liu, Xuanyong

2015-02-01

Titanium and its alloys have been used extensively for orthopedic and dental implants. Although these devices have achieved high rates of success, two major complications may be encountered: the lack of osseointegration and the biomaterial-related infection. Accordingly, cerium oxide (CeO2)-doped titanium oxide (TiO2) materials were coated on titanium by an atmospheric plasma spraying (APS) technique. The phase structures, morphologies, and surface chemical states of the obtained coatings were characterized by x-ray diffraction, scanning electron microscopy, and x-ray photoelectron spectroscopy techniques. The in vitro antibacterial and cytocompatibility of the materials were studied with Staphylococcus aureus ( S. aureus, ATCC25923) and osteoblast precursor cell line MC3T3-E1. The results indicated that the addition of CeO2 shifts slightly the diffraction peaks of TiO2 matrix to low angles but does not change its rutile phase structure. In addition, the CeO2/TiO2 composite coatings possess dose-dependent corrosion resistance and antimicrobial properties. And doping of 10 wt.% CeO2 exhibits the highest activity against S. aureus, improved corrosion resistance, and competitive cytocompatibility, which argues a promising option for balancing the osteogenetic and antibacterial properties of titanium implants.

Enhanced Power Conversion Efficiency of Perovskite Solar Cells with an Up-Conversion Material of Er3+-Yb3+-Li+ Tri-doped TiO2.

Science.gov (United States)

Zhang, Zhenlong; Qin, Jianqiang; Shi, Wenjia; Liu, Yanyan; Zhang, Yan; Liu, Yuefeng; Gao, Huiping; Mao, Yanli

2018-05-11

In this paper, Er 3+ -Yb 3+ -Li + tri-doped TiO 2 (UC-TiO 2 ) was prepared by an addition of Li + to Er 3+ -Yb 3+ co-doped TiO 2 . The UC-TiO 2 presented an enhanced up-conversion emission compared with Er 3+ -Yb 3+ co-doped TiO 2 . The UC-TiO 2 was applied to the perovskite solar cells. The power conversion efficiency (PCE) of the solar cells without UC-TiO 2 was 14.0%, while the PCE of the solar cells with UC-TiO 2 was increased to 16.5%, which presented an increase of 19%. The results suggested that UC-TiO 2 is an effective up-conversion material. And this study provided a route to expand the spectral absorption of perovskite solar cells from visible light to near-infrared using up-conversion materials.

A stabilized optical frequency comb based on an Er-doped fiber femtosecond laser

Science.gov (United States)

Xia, Chuanqing; Wu, Tengfei; Zhao, Chunbo; Xing, Shuai

2018-03-01

An optical frequency comb based on a 250 MHz home-made Er-doped fiber femtosecond laser is presented in this paper. The Er-doped fiber laser has a ring cavity and operates mode-locked in femtosecond regime with the technique of nonlinear polarization rotation. The pulse duration is 118 fs and the spectral width is 30 nm. A part of the femtosecond laser is amplified in Er-doped fiber amplifier before propagating through a piece of highly nonlinear fiber for expanding the spectrum. The carrier-envelope offset frequency of the comb which has a signal-to-noise ratio more than 35 dB is extracted by means of f-2f beating. It demonstrates that both carrier-envelope offset frequency and repetition frequency keep phase locked to a Rubidium atomic clock simultaneously for 2 hours. The frequency stabilized fiber combs will be increasingly applied in optical metrology, attosecond pulse generation, and absolute distance measurement.

Electrochemical and optical properties of CeO2-SnO2 and CeO2-SnO2:X (X = Li, C, Si films

Directory of Open Access Journals (Sweden)

Berton Marcos A.C.

2001-01-01

Full Text Available Thin solid films of CeO2-SnO2 (17 mol% Sn and CeO2-SnO2:X (X = Li, C and Si were prepared by the sol-gel route, using an aqueous-based process. The addition of Li, C and Si to the precursor solution leads to films with different electrochemical performances. The films were deposited by the dip-coating technique on ITO coated glass (Donnelly Glass at a speed of 10 cm/min and submitted to a final thermal treatment at 450 °C during 10 min in air. The electrochemical and optical properties of the films were determined from the cyclic voltammetry and chronoamperometry measurements using 0.1 M LiOH as supporting electrolyte. The ion storage capacity of the films was investigated using in situ spectroelectrochemical method and during the insertion/extraction process the films remained transparent. The powders were characterized by thermal analysis (DSC/TGA and X-ray diffraction.

Enhanced frequency upconversion study in Er3+/Yb3+ doped/codoped TWTi glasses

Science.gov (United States)

Azam, Mohd; Rai, Vineet Kumar

2018-04-01

Er3+/Yb3+ doped/codoped TeO2-WO3-TiO2 (TWTi) glasses have been prepared by using the melt-quenching technique. The upconversion (UC) emission spectra of the developed glasses have been recorded upon 980 nm laser excitation. Three intense UC emission bands have been observed within the green and red region centered at ˜532 nm, ˜553 nm and ˜669 nm corresponding to the 2H11/2→4I15/2, 4S3/2→4I15/2 and 4F9/2→4I15/2 transitions respectively in the singly Er3+ doped glass. On introducing Yb3+ ions in the singly Er3+ doped glass, an enhancement of about ˜ 12 times and ˜50 times in the green and red bands respectively have been observed even at low pump power ˜ 364 mW followed by two photon absorption process. Colour tunability from yellowish green to pure green colour region has been observed on varying the pump power. The prepared glass can be used to produce NIR to green upconverter and colour tunable display devices.

Eu and Sr2CeO4 : Eu phosphors suitable for near ultraviolet excitation

Indian Academy of Sciences (India)

Administrator

The study on white light phosphors suitable for near- ultraviolet (nUV) ... Rare earth ion-doped phosphors have been used in varied fields ... practical applications. .... by naked eyes. ... induced by Sr2CeO4 host matrix (Arunachalam Laxmanan.

Ultrafine Nanocrystalline CeO2@C-Containing NaAlH4 with Fast Kinetics and Good Reversibility for Hydrogen Storage.

Science.gov (United States)

Zhang, Xin; Liu, Yongfeng; Wang, Ke; Li, You; Gao, Mingxia; Pan, Hongge

2015-12-21

A nanocrystalline CeO2@C-containing NaAlH4 composite is successfully synthesized in situ by hydrogenating a NaH-Al mixture doped with CeO2@C. Compared with NaAlH4 , the as-prepared CeO2@C-containing NaAlH4 composite, with a minor amount of excess Al, exhibits significantly improved hydrogen storage properties. The dehydrogenation onset temperature of the hydrogenated [NaH-Al-7 wt % CeO2@C]-0.04Al sample is 77 °C lower than that of the pristine sample because of a reduced kinetic barrier. More importantly, the dehydrogenated sample absorbs ∼4.7 wt % hydrogen within 35 min at 100°C and 10 MPa of hydrogen. Compositional and structural analyses reveal that CeO2 is converted to CeH2 during ball milling and that the newly formed CeH2 works with the excess of Al to synergistically improve the hydrogen storage properties of NaAlH4. Our findings will aid in the rational design of novel catalyst-doped complex hydride systems with low operating temperatures, fast kinetics, and long-term cyclability. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

New CeO2 nanoparticles-based topical formulations for the skin protection against organophosphates.

Science.gov (United States)

Zenerino, Arnaud; Boutard, Tifenn; Bignon, Cécile; Amigoni, Sonia; Josse, Denis; Devers, Thierry; Guittard, Frédéric

2015-01-01

To reinforce skin protection against organophosphates (OPs), the development of new topical skin protectants (TSP) has received a great interest. Nanoparticles like cerium dioxide (CeO 2 ) known to adsorb and neutralize OPs are interesting candidates for TSP. However, NPs are difficult to disperse into formulations and they are suspected of toxicological issues. Thus, we want to study: (1) the effect of the addition of CeO 2 NPs in formulations for the skin protection (2) the impact of the doping of CeO 2 NPs by calcium; (3) the effect of two methods of dispersion of CeO 2 NPs: an O/W emulsion or a suspension of a fluorinated thickening polymer (HASE-F) grafted with these NPs. As a screening approach we used silicone membranes as a skin equivalent and Franz diffusion cells for permeation tests. The addition of pure CeO 2 NPs in both formulations permits the penetration to decrease by a 3-4-fold factor. The O/W emulsion allows is the best approach to obtain a film-forming coating with a good reproducibility of the penetration results; whereas the grafting of NPs to a thickener is the best way to obtain an efficient homogenous suspension of CeO 2 NPs with a decreased of toxicological impact but the coating is less film-forming which slightly impacts the reproducibility of the penetration results.

Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects of microstructure and chemical composition

Energy Technology Data Exchange (ETDEWEB)

Cerqueira, M.F., E-mail: fcerqueira@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Via Orabona n.4-70126 Bari (Italy); Stepikhova, M. [Institute for Physics of Microstructures RAS, 603600 Nizhnij Novgorod GSP-105 (Russian Federation); Alpuim, P.; Andres, G. [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Kozanecki, A. [Polish Academy of Sciences, Institute of Physics, PL-02668, Warsaw (Poland); Soares, M.J.; Peres, M. [Departamento de Fisica, Universidade de Aveiro, Campus de Santiago, 3700 Aveiro (Portugal)

2009-08-31

Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er{sup 3+} photoluminescence efficiency.

Flux pinning properties of ErBa2Cu3Oy thin films with BaZrO3 nanorods

International Nuclear Information System (INIS)

Haruta, M; Fujiyoshi, T; Sueyoshi, T; Dezaki, K; Ichigosaki, D; Miyahara, K; Miyagawa, R; Mukaida, M; Matsumoto, K; Yoshida, Y; Ichinose, A; Horii, S

2006-01-01

ErBa 2 Cu 3 O y (ErBCO) thin films with BaZrO 3 (BZO) nanorods were prepared by a PLD method for an enhancement of the critical current density J c . The values of J c for the ErBCO thin film containing 1.5 wt% BZO (Er15) in magnetic fields are higher than those for the ErBCO thin film containing 0.5 wt% BZO (Er05). The peaks of J c have been observed in the angular dependence of J c in both the films when the magnetic field is applied parallel to the c-axis. It has been found that the peak is attributed to the flux pinning by BZO nanorods oriented parallel to the c-axis. The vortex glass-liquid transition temperature T g and the pinning parameter m were derived by fitting observed electric transport properties to the theoretical expression based on the percolation transition model. The value of T g of Er15 is higher than that of Er05. This result indicates that the vortex glass phase extends to a higher temperature region on increasing the fraction of BZO. The peak of m has been found in the magnetic field dependence. This fact is probably due to matching the density of BZO nanorods with that of fluxoids, which was confirmed by TEM observations

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

Science.gov (United States)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Growth process and structure of Er/Si(100) thin film

International Nuclear Information System (INIS)

Fujii, S.; Michishita, Y.; Miyamae, N.; Suto, H.; Honda, S.; Okado, H.; Oura, K.; Katayama, M.

2006-01-01

The solid-phase reactive epitaxial growth processes and structures of Er/Si(100) thin films were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The as-deposited Er film grown at room temperature was transformed into crystalline rectangular-shaped islands after annealing at 900 deg. C. These islands have a hexagonal AlB 2 -type structure and the epitaxial relationship is determined to be ErSi 2 (011-bar0)[0001]//Si(100)[011-bar]. It has been revealed that the surface of the Er silicide island is terminated with an Er plane

Determinants of CEO Turnover in Publicand Private Firms in Denmark - CEO and Firm Characteristics

DEFF Research Database (Denmark)

Sponholtz, Carina

In this study we are the first to draw on longitudinal matched employer-employee data to study CEO turnover. Using this data we contribute tothe existing literature by examining the e¤ect of previously unstudied in-dividual characteristics on CEO turnover. Additionally, we are able toexamine CEO...... turnover. Finally, the inverse relationshipbetween firm performance and CEO turnover only exists in LLL firms(larger limited liability firms, both publicly and privately held), whereagency costs are assumed and found to be highest.In this study we are the first to draw on longitudinal matched employer-employee...... turnover across a variety of firm types that di¤er with re-spect to the corporate governance issues they face. Our simple methodol-ogy to define CEO turnover results in turnover rates similar to those foundpreviously. Our results indicate that CEO characteristics are an important factor in explaining CEO...

Spatially selective Er/Yb-doped CaF{sub 2} crystal formation by CO{sub 2} laser exposure

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo, E-mail: kslim@chungbuk.ac.kr

2014-10-30

Highlights: • Oxyfluoride glass–ceramics containing CaF{sub 2} nanocrystals doped with Er{sup 3+} and Yb{sup 3+} ions were formed on the glass surface by CO{sub 2} laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF{sub 2} nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO{sub 2} laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF{sub 2} and miner Ca{sub 2}SiO{sub 4} nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment.

Spatially selective Er/Yb-doped CaF{sub 2} crystal formation by CO{sub 2} laser exposure

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo, E-mail: kslim@chungbuk.ac.kr

2015-04-15

Highlights: • Oxyfluoride glass–ceramics containing CaF{sub 2} nanocrystals doped with Er{sup 3+} and Yb{sup 3+} ions were formed on the glass surface by CO{sub 2} laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF{sub 2} nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO{sub 2} laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF{sub 2} and miner Ca{sub 2}SiO{sub 4} nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment.

Optical performance of thin films produced by the pulsed laser deposition of SiAlON and Er targets

Energy Technology Data Exchange (ETDEWEB)

Camps, I., E-mail: camps@io.cfmac.csic.es [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Ramírez, J.M. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, c/Martí i Franqués 1, 08028 Barcelona (Spain); Mariscal, A.; Serna, R. [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Garrido, B. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, c/Martí i Franqués 1, 08028 Barcelona (Spain); Perálvarez, M.; Carreras, J. [IREC, Fundació Privada Institut de Recerca en Energia de Catalunya (Spain); Barradas, N.P.; Alves, L.C. [C" 2TN, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela (Portugal); Alves, E. [IPFN, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela (Portugal)

2015-05-01

Highlights: • PLD production of Er-doped thin films from a low cost commercial SiAlON target. • The role of the ablation fluence on the composition, optical properties as well as on the light emission performance at 1.5 μm. • The optimized performance is obtained for the samples deposited at the higher used ablation energy density. Further improvement was achieved through annealing. - Abstract: We report the preparation and optical performance of thin films produced by pulsed laser deposition in vacuum at room temperature, by focusing an ArF excimer laser onto two separate targets: a commercial ceramic SiAlON and a metallic Er target. As a result of the alternate deposition Er:SiAlON films were formed. The as grown films exhibited an Er-related emission peaking at 1532 nm. The role of the PLD energy density during deposition on the final matrix film was investigated, in order to achieve an optimized matrix composition with enhanced optical properties, and its effect on the light emission performance.

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

Directory of Open Access Journals (Sweden)

Xiaoyu Bi

2018-02-01

Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

New CeO2 nanoparticles-based topical formulations for the skin protection against organophosphates

Directory of Open Access Journals (Sweden)

Arnaud Zenerino

2015-01-01

Full Text Available To reinforce skin protection against organophosphates (OPs, the development of new topical skin protectants (TSP has received a great interest. Nanoparticles like cerium dioxide (CeO2 known to adsorb and neutralize OPs are interesting candidates for TSP. However, NPs are difficult to disperse into formulations and they are suspected of toxicological issues. Thus, we want to study: (1 the effect of the addition of CeO2 NPs in formulations for the skin protection (2 the impact of the doping of CeO2 NPs by calcium; (3 the effect of two methods of dispersion of CeO2 NPs: an O/W emulsion or a suspension of a fluorinated thickening polymer (HASE-F grafted with these NPs. As a screening approach we used silicone membranes as a skin equivalent and Franz diffusion cells for permeation tests. The addition of pure CeO2 NPs in both formulations permits the penetration to decrease by a 3–4-fold factor. The O/W emulsion allows is the best approach to obtain a film-forming coating with a good reproducibility of the penetration results; whereas the grafting of NPs to a thickener is the best way to obtain an efficient homogenous suspension of CeO2 NPs with a decreased of toxicological impact but the coating is less film-forming which slightly impacts the reproducibility of the penetration results.

Nanostructured nickel doped β-V{sub 2}O{sub 5} thin films for supercapacitor applications

Energy Technology Data Exchange (ETDEWEB)

Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S. [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India); Purushothaman, K.K. [Department of Physics, TRP Engineering College, Trichy (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India)

2013-07-15

Graphical abstract: - Highlights: • Nanorod with pores has been observed for 5 wt.% nickel doped β-V{sub 2}O{sub 5} thin films. • Film with 5 wt.% of nickel exhibits a specific capacitance of 417 F g{sup −1}. • These films exhibit high energy density. • The charge transfer resistance is 103 Ω. - Abstract: Interesting thin film electrodes of nickel doped vanadium pentoxide with different levels of doping (2.5–10 wt.%) are prepared on FTO and glass substrate at 300 °C using sol–gel spin coating method. The structural and morphological studies are made to understand the nature of the surface of the thin films. The electrochemical characteristics have been investigated through cyclic voltammetry and ac impedance spectroscopy measurements. The doping of nickel with β-V{sub 2}O{sub 5} has led to enhanced intercalation and deintercalation of ions. β-V{sub 2}O{sub 5} films with 5 wt.% of Ni exhibit the maximum specific capacitance of 417 F/g at a scan rate of 5 mV/s, with a good cyclic stability making it a promising candidate for supercapacitor application.

Upconversion Properties of the Er-Doped Y2O3, Bi2O3 and Sb2O3 Nanoparticles Fabricated by Pulsed Laser Ablation in Liquid Media

International Nuclear Information System (INIS)

Zamiri Reza; Bahari-Poor Hamid-Reza; Zakaria Azmi; Jorfi Raheleh; Zamiri Golnoush; Rebelo Avito; Omar Akrajas Ali

2013-01-01

Er-doped Y 2 O 3 , Bi 2 O 3 and Sb 2 O 3 nanoparticles are synthesized using pulsed laser ablation in a liquid. Ceramic targets of Y 2 O 3 :Er 3+ , Bi 2 O 3 :Er 3+ and Sb 2 O 3 :Er 3+ for ablation process are prepared by standard solid-state reaction technique and ablation is carried out in 5-ml distilled water using nanosecond Q-switched Nd:YAG laser. The morphology and size of the fabricated nanoparticles are evaluated by transmission electron microscopy and the luminescence emission properties of the prepared samples are investigated under different excitation wavelengths

CeO2-ZrO2 ceramic compounds

International Nuclear Information System (INIS)

Melo, F.C.L.; Cairo, C.A.C.; Devezas, T.C.; Nono, M.C.A.

1988-01-01

In order to study the mechanical properties of tetragonal polycrystal zirconia stabilized with ceria various powder compositions with different CeO 2 content were made. Modulus of rupture for those compounds was measured. Tetragonal retained phase was determined for samples of CeO 2 -ZrO 2 ceramics with and without superficial mechanical treatment. The experimental results allowed us to evaluate the effects of CeO 2 content and sintering temperature in the mechanical properties and tetragonal transformed phase (t→ m) in ceramics of CeO 2 -ZrO 2 systems. (author) [pt

Controlling the Er content of porous silicon using the doping current intensity

KAUST Repository

Mula, Guido

2014-07-04

The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.

Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

Directory of Open Access Journals (Sweden)

K. Durga Venkata Prasad

2016-07-01

Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi{sub 4}Ti{sub 4}O{sub 15}

Energy Technology Data Exchange (ETDEWEB)

Peng Dengfeng [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Zou Hua; Wang Xusheng; Yao Xi [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Xu Chaonan [National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Lin Jian; Sun Tiantuo [School of Material Science and Engineering, Tongji University, 4800 Cao' an Highway, Shanghai 201804 (China)

2012-12-15

Er{sup 3+} doped SrBi{sub 4}Ti{sub 4}O{sub 15} (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er{sup 3+} concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} to {sup 4}I{sub 15/2}, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d{sub 33} compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d{sub 33}. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices.

Vibration-resistant Er-doped superfluorescent fiber source incorporating a Faraday rotator mirror

Science.gov (United States)

Zhang, Enkang; Yang, Liu; Gao, Zhongxing; Xue, Bing; Zhang, Yonggang

2018-04-01

Improvement in the mean wavelength vibration stability is crucial to the realization of a high-precision fiber-optic gyroscope. We design a vibration-resistant Er-doped superfluorescent fiber source (VR-EDSFS) incorporated with a Faraday rotator mirror and compare it with the conventional Er-doped superfluorescent fiber source (ED-SFS) under different vibration conditions. As shown by experimental results, the mean wavelength vibration stability of the VR-EDSFS is much better than that of the conventional ED-SFS. Under the 1000 to 2000 Hz vibration condition, the former is just 3.4 ppm, which is about 7 ppm less than the latter over 2 h.

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Scintillation properties of Er-doped Y3Al5O12 single crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Ogino, Hiraku; Fujimoto, Yutaka; Suzuki, Akira; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Yoshikawa, Akira

2013-01-01

Er-doped Y 3 Al 5 O 12 single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er 3+ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of 4 I 15/2 to the excited states. The photo- and radio-luminescence spectra showed Er 3+ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y 3 Al 5 O 12 was estimated to be 63% of that of Bi 4 Ge 3 O 12 . -- Highlights: •Er doped Y 3 Al 5 O 12 single crystal scintillators were grown with different Er concentrations. •Optical properties associated with 4f-4f transition were evaluated. •Radio luminescence spectra measurements were performed under 5.5 MeV alpha-ray irradiation. •The highest light yield was estimated to be 63% of that of Bi 4 Ge 3 O 12 under 5.5 MeV alpha-ray irradiation

Structural and photodegradation behaviors of Fe{sup 3+}-doping TiO{sub 2} thin films prepared by a sol–gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Lin, Huey-Jiuan; Yang, Tien-Syh [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80782, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2014-10-15

Highlights: • Pure and various Fe{sup 3+}-doped TiO{sub 2} thin films have been successfully fabricated. • The phase of all thin films was single phase of anatase TiO{sub 2} when calcined at 823 K. • The crystallinity of TiO{sub 2} thin films decreased as Fe{sup 3+}-doping increased. • The photodegradation of each sample increased as the irradiation time increased. • The photodegradation increased as Fe{sup 3+}-doping increased at a fixed irradiation time. - Abstract: Pure and various Fe{sup 3+}-doping TiO{sub 2} thin films have been successfully fabricated on glass substrate prepared by a sol–gel spin coating route. The structural and photodegradation behavior of these films after calcined at various temperatures for 1 h were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrum and degradation of 1.0 × 10{sup −5} M methylene blue solution. When all thin films after calcined at 823 K for 1 h, the crystalline phase are comprised only contained single phase of anatase TiO{sub 2}. The crystallinity of various Fe{sup 3+}-doping TiO{sub 2} thin films decreases with Fe{sup 3+}-doping concentration increased. The PL intensity of all thin films also decreases with Fe{sup 3+}-doping concentration increased. When all various Fe{sup 3+}-doping TiO{sub 2} thin films after calcined at 823 K for 1 h, the photodegradation of each sample increases with irradiation time increased. Moreover, the photodegradation also increases with Fe{sup 3+}-doping concentration increased when fixed at constant irradiation time.

Improved diode performance of Ag nanoparticle dispersed Er doped In2O3 film

Science.gov (United States)

Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Mondal, Aniruddha

2018-04-01

Ag nanoparticle(NP) dispersedEr doped In2O3 film was prepared by sol-gel method followed by thermal evaporation cum glancing angle deposition technique. The Schottky contact based devicecontaining Ag NPs shows ideality factor of ˜180 at 10 K and ˜5 at 300 K, which is lesser as compared to the device that does not contain Ag NPs. The lower ideality factor value all over the temperature range makes the diode more reliable.

Spectroscopic properties of Er{sup 3+}-doped antimony oxide glass

Energy Technology Data Exchange (ETDEWEB)

Ouannes, K.; Soltani, M.T. [Laboratoire de Physique Photonique et Nanomatériaux Multifonctionnels, Université de Biskra, BP 145 RP, 07000 Biskra (Algeria); Poulain, M. [UMR 6226 – Verres et Céramiques – Campus de Beaulieu, Université' de Rennes 1, 35042 Rennes (France); Boulon, G.; Alombert-Goget, G.; Guyot, Y.; Pillonnet, A. [Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne (France); Lebbou, K., E-mail: kheireddine.lebbou@univ-lyon1.fr [Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne (France)

2014-08-01

Highlight: • As a function of Er concentration, glasses corresponding to the 60Sb{sub 2}O{sub 3}–20WO{sub 3}–(19 − x) Na{sub 2}O–1Bi{sub 2}O{sub 3}, xEr{sub 2}O{sub 3} formula were prepared. The quantum efficiency shows that this glass could be promised for laser devices. - Abstract: Spectroscopic properties of Er{sup 3+} ions have been studied in the 60Sb{sub 2}O{sub 3}–20WO{sub 3}–19Na{sub 2}O–1Bi{sub 2}O{sub 3} (SWNB) glasses doped with 0.25 and 0.50 mol% Er{sub 2}O{sub 3} respectively. The Judd–Ofelt parameters measured from the absorption spectra have been used to calculate the radiative life-time (τ{sub r}) and the stimulated emission cross section. The low phonon energy, a reduced quenching effect and a high quantum efficiency of 90% for the 1.53 μm expected laser emission into pumping at 980 nm are in favor of promising material laser application.

Solid state speciation of uranium and its local structure in Sr2CeO4 using photoluminescence spectroscopy

Science.gov (United States)

Sahu, M.; Gupta, Santosh K.; Jain, D.; Saxena, M. K.; Kadam, R. M.

2018-04-01

An effort was taken to carry our speciation study of uranium ion in technologically important cerate host Sr2CeO4 using time resolved photoluminescence spectroscopy. Such studies are not relevant only to nuclear industry but can give rich insight into fundamentals of 5f electron chemistry in solid state systems. In this work both undoped and varied amount of uranium doped Sr2CeO4 compound is synthesized using complex polymerization method and is characterized systematically using X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectroscopy and scanning electron microscopy (SEM). Both XRD and Raman spectroscopy confirmed the formation of pure Sr2CeO4 which has tendency to decompose peritectically to SrCeO3 and SrO at higher temperature. Uranium doping is confirmed by XRD. Uranium exhibits a rich chemistry owing to its variable oxidation state from +3 to +6. Each of them exhibits distinct luminescence properties either due to f-f transitions or ligand to metal charge transfer (LMCT). We have taken Sr2CeO4 as a model host lattice to understand the photophysical characteristics of uranium ion in it. Emission spectroscopy revealed the stabilization of uranium as U (VI) in the form of UO66- (octahedral uranate) in Sr2CeO4. Emission kinetics study reflects that uranate ions are not homogeneously distributed in Sr2CeO4 and it has two different environments due to its stabilization at both Sr2+ as well as Ce4+ site. The lifetime population analysis interestingly pinpointed that majority of uranate ion resided at Ce4+ site. The critical energy-transfer distance between the uranate ion was determined based on which the concentration quenching mechanism was attributed to electric multipolar interaction. These studies are very important in designing Sr2CeO4 based optoelectronic material as well exploring it for actinides studies.

Promoting effect of CeO 2 on cyclohexanol conversion over CeO 2

Indian Academy of Sciences (India)

Abstract. CeO2-ZnO materials were prepared by amorphous citrate process and characterized by TGA, XRD, UV-DRS and surface area measurements. TGA showed that the citrate precursors decompose in the range 350-550°C producing CeO2-containing catalytic materials. XRD and DRS results indicated the formation of ...

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Third-order nonlinearity of Er3+-doped lead phosphate glass

Energy Technology Data Exchange (ETDEWEB)

Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Guedes Da Silva, Ilde [ORNL; Siqueira, J. P. [Instituto de Física de São Carlos, Universidade de São Paulo, Brazil; Misoguti, L. [Instituto de Física de São Carlos, Universidade de São Paulo, Brazil; Zilio, S. C. [Instituto de Física de São Carlos, Universidade de São Paulo, Brazil; Boatner, Lynn A [ORNL

2010-01-01

The third-order optical susceptibility and dispersion of the linear refractive index of Er3+-doped lead phosphate glass were measured in the wavelength range between 400 and 1940 nm by using the spectrally resolved femtosecond Maker fringes technique. The nonlinear refractive index obtained from the third-order susceptibility was found to be five times higher than that of silica, indicating that Er3+-doped lead phosphate glass is a potential candidate to be used as the base component for the fabrication of photonic devices. For comparison purposes, the Z-scan technique was also employed to obtain the values of the nonlinear refractive index of E-doped lead phosphate glass at several wavelengths, and the values obtained using the two techniques agree to within 15%.

Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

International Nuclear Information System (INIS)

Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

2013-01-01

In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Photoluminescence study of Er-doped zinc–sodium–antimonite glasses

Energy Technology Data Exchange (ETDEWEB)

Zavadil, J., E-mail: zavadil@ufe.cz [Institute of Photonics and Electronics AS CR, Prague (Czech Republic); Ivanova, Z.G. [Institute of Solid State Physics Bulgarian Academy of Sciences, Sofia (Bulgaria); Kostka, P. [Institute of Rock Structure and Mechanics AS CR, Prague (Czech Republic); Hamzaoui, M.; Soltani, M.T. [Laboratoire de Physique Photonique et Nanomatériaux, Universite de Biskra (Algeria)

2014-10-25

Highlights: • Optical gap found at around 3.1 eV and its compositional tendency was deduced. • Emission spectra are overwhelmed by narrow 4f–4f emission bands of Er{sup 3+}. • Fine structure of emission bands at 980 and 1530 nm measured at 300 and 4 K. • Schematic energy diagram of Stark levels for 3 lowest manifolds of Er{sup 3+} is proposed. • A nature of temperature broadening of 4f–4f PL bands was discussed. - Abstract: Bulk samples of Er-doped zinc–sodium–antimonite glasses have been investigated by transmission and photoluminescence (PL) spectroscopy. Two series of compositions, (Sb{sub 2}O{sub 3}){sub 90−x}(Na{sub 2}O){sub 10}(ZnO){sub x} and (Sb{sub 2}O{sub 3}){sub 80−x}(Na{sub 2}O){sub 20}(ZnO){sub x}, doped with 0.25 mol% Er{sub 2}O{sub 3}, have been chosen for this study. Transmission spectra exhibit sharp absorption bands centred at 450, 489, 521, 545, 652, 795, 975 and 1530 nm, which correspond to absorption of Er{sup 3+} ions and they are attributed to the optical transitions from the ground state {sup 4}I{sub 15/2} to the excited states {sup 4}F{sub 5/2}, {sup 4}F{sub 7/2}, {sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, {sup 4}F{sub 9/2}, {sup 4}I{sub 9/2}, {sup 4}I{sub 11/2} and {sup 4}I{sub 13/2}, respectively. The optical gap has been found to vary from 3.09 to 3.15 eV with a tendency to decrease at higher Na{sub 2}O and/or ZnO contents. Four extrinsic bands due to OH{sup −}, Si–O, CO{sub 2}, and (CO{sub 3}){sup 2−} carbonate group vibrations have been identified in the infrared region. Emission spectra are overwhelmed by narrow 4f–4f emission bands. Fine structure of emission bands at 980 and 1530 nm, corresponding to radiative transitions from two lowest excited states of Er{sup 3+} ions to the ground state manifold have been investigated at room temperature and at 4 K. A schematic energy diagram of Stark levels splitting for the three lowest manifolds {sup 4}I{sub 11/2}, {sup 4}I{sub 13/2} and {sup 4}I{sub 15/2} has been

Concentration dependent luminescence quenching of Er{sup 3+}-doped zinc boro-tellurite glass

Energy Technology Data Exchange (ETDEWEB)

Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.; Reza Dousti, M.

2013-12-15

Understanding the mechanism of luminescence quenching in rare earth doped tellurite glass is an important issue. The Er{sup 3+}-doped boro-tellurite glasses with compositions 30B{sub 2}O{sub 3}+10ZnO+(60−x)TeO{sub 2}+xEr{sub 2}O{sub 3} (where x=0, 0.5, 1, 1.5 and 2 mol%) were prepared by melt quenching method. Structural and optical properties of the proposed glasses were characterized using XRD, FTIR, density, UV–vis-IR absorption and PL spectroscopy. The amorphous nature of these glasses was confirmed by XRD technique. The IR-spectrum reveals five absorption bands assigned to different B–O and Te–O vibrational groups. UV–vis-IR absorption spectrum exhibits seven absorption bands at 6553, 10,244, 12,547, 15,360, 19,230, 20,661 and 22,522 cm{sup −1} corresponding to {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}I{sub 9/2}, {sup 4}F{sub 9/2}, {sup 2}H{sub 11/2}, {sup 4}F{sub 7/2} and {sup 4}F{sub 3/2} excited states of Er{sup 3+} ion respectively. The optical band gap energy (E{sub opt}) corresponding to the direct and indirect allowed transitions decreased, while the Urbach energy and cut-off wavelengths are increased by the introduction of Er{sup 3+} ions. The refractive index, density and phonon cut-off edge of the samples are increased and the molar volume decreased with the further addition of dopants. The Judd–Ofelt parameter (Ω{sub 2}) decreased from 5.73 to 3.13×10{sup −20} cm{sup 2} with the increase of erbium ions concentration from 0.5 to 2 mol%. The PL spectra show green emissions for the transition from {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} excited states to {sup 4}I{sub 15/2} ground state, which show strong quenching due to the addition of Er{sup 3+} ions. -- Highlights: • Er{sup 3+}-doped zinc boro-tellurite glass has been synthesized by melt quench method. • Spectroscopic properties dependent concentration is analyzed by different techniques. • Judd–Ofelt intensity parameter (Ω{sub 2}) decreased by increase in erbium

Optical properties of highly Er{sup 3+}-doped sodium-aluminium-phosphate glasses for broadband 1.5 {mu}m emission

Energy Technology Data Exchange (ETDEWEB)

Reddy, A. Amarnath [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Babu, S. Surendra [Laser Instrumentation Design Centre, Instrument Research and Development Establishment, Dehradun 248008 (India); Pradeesh, K. [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Otton, C.J. [Valencia Nanophotonics Technology Center, Universidad Politecnica de Valencia, 46022 Valencia (Spain); Vijaya Prakash, G., E-mail: prakash@physics.iitd.ac.in [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)

2011-03-03

Research highlights: > Highly Er{sup 3+} doped phosphate glasses for the 1.54 {mu}m laser emission were explored. > Emission from these doped glasses shows larger lifetimes and quantum efficiencies. > Optical amplifier parameters are greater than other reported phosphate glasses. > The durability and obtained results are most favourable for short-length amplifiers. - Abstract: Erbium-doped Na{sub 3}Al{sub 2}P{sub 3}O{sub 12} (NAP) glasses with compositions 92NAP-(8-x)Al{sub 2}O{sub 3}-(x)Er{sub 2}O{sub 3} (where x = 2-8) were prepared and characterized for absorption, visible and NIR emission and decay time properties. Judd-Ofelt analysis has been carried out to predict radiative properties of luminescent levels of Er{sup 3+} ions. Comparatively larger photoluminescence lifetimes (7.86 ms) and larger quantum efficiencies (74%) for the laser transition, {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} (at 1.54 {mu}m) are observed. The moisture insensitivity, large Er{sup 3+} ion doping capability and relatively high-gain and broad emission at 1.5 {mu}m are the most notable features of these glasses to realize efficient short-length optical amplifiers.

Synthesis and characterization of Sr2CeO4: Eu3+ phosphor by different forms

International Nuclear Information System (INIS)

Murthy, K.V.R.; Rao, Ch. Atchyutha; Suresh, K.; Ratna Kumar, B.W.; Nageswara Rao, B.; Poornachandra Rao, N.V.; Subba Rao, B.

2011-01-01

High temperature solid state reaction method was explored to synthesize undoped Sr 2 CeO 4 and Eu 3+ RE doped Sr 2 CeO 4 phosphor using inorganic materials taking in three different forms like, form (i) Strontium Carbonate (SrCO 3 ), Cerium Oxide (CeO 2 ), (ii) Strontium Nitrate (Sr(NO 3 ) 2 ), Cerium Oxide (CeO 2 ) and (iii) Strontium Nitrate (Sr(NO 3 ) 2 ), Cerium Nitrate (Ce(NO 3 ) 3 .6(NH 2 .CO.NH 2 ) in stoichiometric proportions of Sr:Ce as 2:1 and ground into a fine powder using agate mortar and pestle about an hour. The grounded samples were placed in an alumina crucible and fired at 1200 deg C for 3 hours in a muffle furnace with a heating rate of 5 deg C/min. To investigate the crystal structure, phase, morphology and luminescent properties of the synthesized phosphors XRD, SEM, Photoluminescence (PL) spectra, TL and CIE techniques were used. The Photoluminescence (PL) emission and excitation spectra were measured by Spectrofluorophotometer (SHIMADZU, RF-5301 PC) using Xenon lamp as excitation source. To identify the crystal phase, XRD analysis was carried out with a powder diffractometer (Rigaku-D/max 2500) using CuKα radiation. The microstructures of the samples were studied using a scanning electron microscopy (SEM) (XL 30 CP Philips). All the analysis was recorded at room temperature. We have compared the results of the prepared samples by different forms. From the XRD analysis it was found that the prepared phosphors are mostly in single phase of Sr 2 CeO 4 with an orthorhombic structure. From the XRD data, using Scherrer's formula the calculated average crystallite size is (i) ∼ 28 nm (ii) ∼ 9 nm (iii) ∼ 7 nm using FWHM. This indicates that, the prepared phosphors via high temperature solid state reaction method is in nano size. Sr 2 CeO 4 exhibits photoluminescence due to the charge transfer (CT) mechanism. The sample displays a broad excitation spectrum range from ∼ 220 to 400 nm. Under 350 nm excitation, the undoped Sr 2 CeO 4 shows

Ionically conducting Er3+-doped DNA-based biomembranes for electrochromic devices

International Nuclear Information System (INIS)

Leones, R.; Fernandes, M.; Sentanin, F.; Cesarino, I.; Lima, J.F.; Zea Bermudez, V. de; Pawlicka, A.; Magon, C.J.; Donoso, J.P.; Silva, M.M.

2014-01-01

Biopolymer-based membranes have particular interest due to their biocompatibility, Biodegradability, easy extraction from natural resources and low cost. The incorporation of Er 3+ ions into natural macromolecule hosts with the purpose of producing highly efficient emitting phosphors is of widespread interest in materials science, due to their important roles in display devices. Thus, biomembranes may be viewed as innovative materials for the area of optics. This paper describes studies of luminescent material DNA-based membranes doped with erbium triflate and demonstrates that their potential technological applications may be expanded to electrochromic devices. The sample that exhibits the highest ionic conductivity is DNA 10 Er, (1.17 × 10 −5 and 7.76 × 10 −4 S.cm −1 at 30 and 100 °C, respectively). DSC, XRD and POM showed that the inclusion of the guest salt into DNA does not change significantly its amorphous nature. The overall redox stability was ca. 2.0 V indicating that these materials have an acceptable stability window for applications in solid state electrochemical devices. The EPR analysis suggested that the Er 3+ ions are distributed in various environments. A small ECD comprising a Er 3+ -doped DNA-based membrane was assembled and tested by cyclic voltammetry and chronoamperometry. These electrochemical analyses revealed a pale blue color to transparent color change and a decrease of the charge density from -4.0 to -1.2 mC.cm −2 during 4000 color/bleaching cycles

Luminescence of rare earth-doped Si-ZrO2 co-sputtered films

International Nuclear Information System (INIS)

Rozo, Carlos; Jaque, Daniel; Fonseca, Luis F.; Sole, Jose Garcia

2008-01-01

Er-doped Si-yttria-stabilized zirconia (YSZ) thin film samples were prepared by rf co-sputtering. Chemical composition of the samples was determined using energy-dispersive spectroscopy (EDS) and the structure of the films by X-ray diffraction (XRD). The samples were annealed to 700 deg. C. Photoluminescence (PL) measurements were performed for the visible and infrared. By exciting with the 488-nm-laser line the Er 3+ emissions 2 H 11/2 → 4 I 15/2 , 4 S 3/2 → 4 I 15/2 , 4 F 9/2 → 4 I 15/2 and a narrow 4 I 13/2 → 4 I 15/2 emission were observed. The 4 I 11/2 → 4 I 15/2 emissions for the same excitation wavelength were weak. Excitation wavelength dependence of the 4 I 13/2 → 4 I 15/2 emissions indicated that the emissions were due to a combination of energy transfer from Si nanoparticles (np) to Er ions and energy transfer from defects in the matrix to the Er ions for excitations resonant with the energy levels of such defects. 4 I 13/2 → 4 I 15/2 emission decay measurements show two decaying populations of Er ions according to their locations with respect to other ions or any non-radiative defects. 4 I 11/2 → 4 I 15/2 emission dependence on 4 I 13/2 → 4 I 15/2 emission showed that the former was possibly due to a combination of downconversion from higher levels of the Er ions, energy transfer from Si nanoparticles and upconversion transfer processes. We concluded that Er-doped Si-YSZ is a promising material for photonic applications being easily broadband excited using low-pumping powers

Chromium doped TiO2 sputtered thin films synthesis, physical investigations and applications

CERN Document Server

Hajjaji, Anouar; Gaidi, Mounir; Bessais, Brahim; El Khakani, My Ali

2014-01-01

This book presents co-sputtered processes ways to produce chrome doped TiO2 thin films onto various substrates such as quartz, silicon and porous silicon. Emphasis is given on the link between the experimental preparation and physical characterization in terms of Cr content. Moreover, the structural, optical and optoelectronic investigations are emphasized throughout. The book explores the potencial applications of devices based on Cr doped TiO2 thin films as gas sensors and in photocatalysis and in the photovoltaic industry. Also, this book provides extensive leads into research literature, and each chapter contains details which aim to develop awareness of the subject and the methods used. The content presented here will be useful for graduate students as well as researchers in materials science, physics, chemistry and engineering.

Co-operative energy transfer in Yb3+-Er3+ co-doped SrGdxOy upconverting phosphor

Science.gov (United States)

Kumar, Ashwini; Pathak, Trilok K.; Dhoble, S. J.; . Terblans, J. J.; Swart, H. C.

2018-04-01

Upconversion nanoparticles (UCNPs) have shown considerable interest in many fields; however, low upconversion efficiency of UCNPs is still the most severe limitation of their applications. Yb3+ and Er3+ co-doped SrGd4O7/Gd2O3(SGO) upconversion (UC) phosphors were synthesized by a modified co-precipitation process. The UC properties were investigated by direct excitation with a 980 nm laser. It was observed that the as prepared materials showed relatively strong green emission, while upon the incorporation of the Er3+ ion, there was an increase in the upconversion luminescence intensity for the red component. The effect of different doping concentration of Er3+on the emission spectra and X-ray diffraction patterns of the UC materials have also been studied. The luminescence lifetimes and Commission Internationale de L'Eclairage coordinates for these as prepared samples were determined to understand the energy transfer (ET) mechanisms occurring between Yb3+ and Er3+ in the SGO host matrix. The UC luminescence intensity as a function of laser pump power was monitored and it was confirmed that the UC process in SGO:Yb3+/Er3+is a two-photon absorption process. The findings reported here are expected to provide a better approach for understanding of the ET mechanisms in the oxide based Yb3+/Er3+ co-doped UC phosphors. This study might be helpful in precisely defined applications where optical transitions are essential criterion and this can be easily achieved by smart tuning of the emission properties of Yb3+/Er3+ co-doped UC phosphors.

Up-conversion monodispersed spheres of NaYF4:Yb3+/Er3+: green and red emission tailoring mediated by heating temperature, and greatly enhanced luminescence by Mn2+ doping.

Science.gov (United States)

Zhu, Qi; Song, Caiyun; Li, Xiaodong; Sun, Xudong; Li, Ji-Guang

2018-04-09

Submicron sized, monodispersed spheres of Mn2+, Yb3+/Er3+ and Mn2+/Yb3+/Er3+ doped α-NaYF4 were easily autoclaved from mixed solutions of the component nitrates and ammonium fluoride (NH4F), in the presence of EDTA-2Na. Detailed characterizations of the resultant phosphors were obtained using XRD, Raman spectroscopy, FE-SEM, HR-TEM, STEM, PLE/PL spectroscopy, and fluorescence decay analysis. Finer structure and better crystal perfection was observed at a higher calcination temperature, and the spherical shape and excellent dispersion of the original particles was retained at temperatures up to 600 °C. Under the 980 nm infrared excitation, the Yb3+/Er3+-doped sample (calcined at 400 °C) exhibits a stronger green emission centered at ∼524 nm (2H11/2 → 4I15/2 transition of Er3+) and a weaker red emission centered at ∼657 nm (4F9/2 → 4I15/2 transition of Er3+). A 200 °C increase in the temperature from 400 °C to 600 °C resulted in the dominant red emission originating from the 4F9/2 → 4I15/2 transition of Er3+, instead of the previously dominant green one. Mn2+ doping induced a remarkable more enhanced intensity at ∼657 nm and ∼667 nm (red emission area) than that at ∼524 nm and ∼546 nm (green emission area), because of the non-radiative energy transfer between Mn2+ and Er3+. However, a poor thermal stability was induced by Mn2+ doping. The observed upconversion luminescence of the samples calcined at 400 °C and 600 °C followed the two photon process and the four photon process, respectively.

Ionic conductivity ageing behaviour of 10 mol.% Sc2O3–1 mol.% CeO2–ZrO2 ceramics

DEFF Research Database (Denmark)

Omar, Shobit; Bonanos, Nikolaos

2010-01-01

The long-term ionic conductivity behaviour of samples of zirconia co-doped with 10 mol.% of Sc2O3 and 1 mol.% CeO2 is evaluated in oxidizing and reducing atmospheres at 600 °C. After 3,000 h, the sample kept in reducing atmospheres exhibits 20% loss in the ionic conductivity, while the sample kep...

Up-conversion mechanisms in Er{sup 3+} doped YbAG crystals

Energy Technology Data Exchange (ETDEWEB)

Kaczkan, Marcin; Borowska, Maja [Institute of Microelectronics and Optoelectronics PW, Warsaw (Poland); Malinowski, Michal [Institute of Microelectronics and Optoelectronics PW, Warsaw (Poland); Institute of Electronic Materials Technology, Warsaw (Poland); Lukasiewicz, Tadeusz; Kolodziejak, Katarzyna [Institute of Electronic Materials Technology, Warsaw (Poland)

2009-07-15

Up-conversion phenomena leading to the red, green and violet emissions in erbium doped ytterbium-aluminum garnet (YbAG) are investigated. Absorption and emission spectra and luminescence dynamics from various excited states of YbAG:Er{sup 3+} were registered. The low temperature absorption spectra were used to determine Stark levels energies of Er{sup 3+} ion in the investigated host. Emissions from the high lying excited states {sup 2}G{sub 9/2}, {sup 4}S{sub 3/2} and {sup 4}F{sub 9/2} of Er{sup 3+} were characterized under pulsed multi-photon IR excitation in the region of wavelength corresponding to the strong {sup 2}F{sub 7/2} {yields} {sup 2}F{sub 5/2} absorption transition of Yb{sup 3+} ions. Using the rate equations formalism the dynamics of the observed emissions were modeled. From the comparison of the measured and calculated decays the energy transfer rates between Yb{sup 3+} and Er{sup 3+} ions were evaluated. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Cr doping induced negative transverse magnetoresistance in C d3A s2 thin films

Science.gov (United States)

Liu, Yanwen; Tiwari, Rajarshi; Narayan, Awadhesh; Jin, Zhao; Yuan, Xiang; Zhang, Cheng; Chen, Feng; Li, Liang; Xia, Zhengcai; Sanvito, Stefano; Zhou, Peng; Xiu, Faxian

2018-02-01

The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped C d3A s2 thin films grown by molecular-beam epitaxy. With the Cr doping, C d3A s2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped C d3A s2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal C d3A s2 . The Cr-induced topological phase transition and the formation of magnetic polarons in C d3A s2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

Structural and spectroscopic studies on Er3+ doped boro-tellurite glasses

Science.gov (United States)

Selvaraju, K.; Marimuthu, K.

2012-04-01

Er3+ doped boro-tellurite glasses with the chemical composition (69-x)B2O3-xTeO2-15MgO-15K2O-1Er2O3 (where x=0, 10, 20, 30 and 40 wt%) have been prepared and their structural and spectroscopic behavior were studied and reported. The varying tellurium dioxide content in the host matrix that results, changes in structural and spectroscopic behavior around Er3+ ions are explored through XRD, FTIR, UV-VIS-NIR and luminescence measurements. The XRD pattern confirms the amorphous nature of the prepared glasses and the FTIR spectra explore the fundamental groups and the local structural units in the prepared boro-tellurite glasses. The bonding parameters (βbar and δ) have been calculated from the observed band positions of the absorption spectra to claim the ionic/covalent nature of the prepared glasses. The Judd-Ofelt (JO) intensity parameters Ωλ (λ=2, 4 and 6) were determined through experimental and calculated oscillator strengths obtained from the absorption spectra and their results are studied and compared with reported literature. The variation in the JO parameters Ωλ (λ=2, 4 and 6) with the change in chemical composition have been discussed in detail. The JO parameters have also been used to derive the important radiative properties like transition probability (A), branching ratio (βR) and peak stimulated emission cross-section (σPE) for the excited state transitions 2H9/2→4I15/2 and 2H11/2 and 4S3/2→4I15/2 of the Er3+ ions and the results were studied and reported. Using Davis and Mott theory, optical band gap energy (Eopt) values for the direct and indirect allowed transitions have been calculated and discussed along with the Urbach energy values for the prepared Er3+ doped boro-tellurite glasses in the present study. The optical properties of the prepared glasses with the change in tellurium dioxide have been studied and compared with similar results.

Designed Er(3+)-singly doped NaYF4 with double excitation bands for simultaneous deep macroscopic and microscopic upconverting bioimaging.

Science.gov (United States)

Wen, Xuanyuan; Wang, Baoju; Wu, Ruitao; Li, Nana; He, Sailing; Zhan, Qiuqiang

2016-06-01

Simultaneous deep macroscopic imaging and microscopic imaging is in urgent demand, but is challenging to achieve experimentally due to the lack of proper fluorescent probes. Herein, we have designed and successfully synthesized simplex Er(3+)-doped upconversion nanoparticles (UCNPs) with double excitation bands for simultaneous deep macroscopic and microscopic imaging. The material structure and the excitation wavelength of Er(3+)-singly doped UCNPs were further optimized to enhance the upconversion emission efficiency. After optimization, we found that NaYF4:30%Er(3+)@NaYF4:2%Er(3+) could simultaneously achieve efficient two-photon excitation (2PE) macroscopic tissue imaging and three-photon excitation (3PE) deep microscopic when excited by 808 nm continuous wave (CW) and 1480 nm CW lasers, respectively. In vitro cell imaging and in vivo imaging have also been implemented to demonstrate the feasibility and potential of the proposed simplex Er(3+)-doped UCNPs as bioprobe.

Structural and optical investigation in Er3+ doped Y2MoO6 phosphors

Science.gov (United States)

Mondal, Manisha; Rai, Vineet Kumar

2018-05-01

The Er3+ doped Y2MoO6 phosphors have been structurally and optically characterized by X-ray Diffraction (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis absorption spectroscopy and frequency upconversion (UC) emission studies. The crystal and the particles size are found to be ˜ 85 nm and ˜ 200 nm from XRD and FESEM analysis. The intense peak at ˜ 206 nm in the UV-Vis absorption spectroscopy is attributed due to the charge transfer transition between the Mo6+ and the O2- ions in the MoO4 group in the host molybdate. The frequency UC emission studies of the prepared phosphors under 980 nm diode laser excitation shows the intense UC emission in the 0.3 mol% concentrations for the Er3+ ions. In the UC emission spectra, the emission peaks at green (˜ 525 nm and ˜ 546 nm) and red (˜ 656 nm) bands are corresponding to the 2H11/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions of Er3+ ions. The mechanisms involved in the UC process have been explored with the help of energy level diagram. Moreover, the CIE point (0.31, 0.60) lie in the green colour region which indicates that the developed phosphor have suitable applications in NIR to visible upconverter and in making green light display devices.

Growth of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Aravazhi, S.; Geskus, D.; Pollnau, Markus; Worhoff, Kerstin; Agazzi, L.; Ismail, N.; Leijtens, X

2008-01-01

Rare-earth-ion-doped $KY(WO_4)_2 (KYW)$ is an important candidate for solid-state lasers. Its high refractive indices of the order of 2.0 make it attractive also for applications as integrated optical devices. Liquid phase epitaxy was employed for growing mono-crystalline KYW thin films co-doped

Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films

International Nuclear Information System (INIS)

Zribi, M.; Kanzari, M.; Rezig, B.

2008-01-01

Structural and optical properties of Na-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 deg. C in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In 6 S 7 , which disappeared on annealing above 350 deg. C. Good quality CuInS 2 :Na 0.3% films were obtained on annealing at 500 deg. C. Furthermore, we found that the absorption coefficient of Na-doped CuInS 2 thin films reached 1.5 x 10 5 cm -1 . The change in band gap of the doped samples annealed in the temperatures from 250 to 500 deg. C was in the range 0.038-0.105 eV

Molybdenum Doped SnO2 Thin Films as a Methanol Vapor Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2013-02-01

Full Text Available The molybdenum doped SnO2 thin films were synthesized by conventional spray pyrolysis route and has been investigated for the methanol vapor sensing. The structural and elemental composition analysis of thin films was carried out by X- ray diffraction and Scanning Electron Microscopy (SEM and Energy Dispersive X-ray spectroscopy (EDAX.The XRD spectrum revealed that the thin films have the polycrystalline nature with a mixed phase comprising of SnO2 and MoO3. The scanning Electron Microscopy (SEM clears that the surface morphology observed to be granular, uniformly covering the entire surface area of the thin film. The methanol vapor sensing studies were performed in dry air at the different temperatures. The influence of the concentration of Molybdenum and operating temperature on the sensor performance has been investigated.

Spectroscopic properties of Er3+-doped fluorotellurite glasses containing various modifiers

Science.gov (United States)

Burtan-Gwizdała, Bożena; Reben, Manuela; Cisowski, Jan; Grelowska, Iwona; Yousef, El Sayed; Algarni, Hamed; Lisiecki, Radosław; Nosidlak, Natalia

2017-11-01

We have investigated the optical and spectroscopic properties of new Er3+-doped fluorotellurite glasses with the basic molar composition 75%TeO2-10%P2O5-10%ZnO-5%PbF2, modified by replacing 5%TeO2 by four various metal oxides, namely MgO, PbO, SrO and CdO. The ellipsometric data have provided a Sellmeier-type dispersion relation of the refractive index of the investigated glasses. The optical absorption edge has been described within the Urbach approach, while the absorption and fluorescence spectra have been analyzed in terms of the standard Judd-Ofelt theory along with the photoluminescence decay of the 4I13/2 and 4S3/2 levels of the Er3+ ion. The absorption and emission spectra of the 4I15/2 ↔ 4I13/2 infrared transition have been analyzed within the McCumber theory to yield the peak emission cross-section and figure of merit (FOM) for the amplifier gain. It appears that the glass containing MgO as a modifier is characterized by the largest FOM suggesting that the fluorotellurite matrix with this oxide can be a good novel host for Er3+ ion doping. Finally, we propose a new simple method to calculate the mean transition energy of the McCumber approach as the arithmetic average of the barycenter wavenumbers of absorption and emission spectra.

Electroplating of erbium on steel surface in ErCl3 doped LiCl-KCl

International Nuclear Information System (INIS)

Kondo, Masatoshi; Tanaka, Teruya; Muroga, Takeo; Tsujimura, Hiroyuki; Ito, Yasuhiko

2012-01-01

The electroplating of Er metal on the reduced activation ferritic martensitic steel, JLF-1 (Fe-9Cr-2W-0.1C), in a molten salt was studied. The specimen was immersed in the molten ErCl 3 doped LiCl-KCl electrolyte. The electroplating was carried out by a constant potential electrolysis method and a pulsed current electrolysis method. It was found that the Er metal was deposited on the specimen surface due to the electrochemical reaction. (author)

Metalorganic chemical vapor deposition of Er{sub 2}O{sub 3} thin films: Correlation between growth process and film properties

Energy Technology Data Exchange (ETDEWEB)

Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

2009-02-27

Er{sub 2}O{sub 3} thin films have been grown by metalorganic chemical vapor deposition (MOCVD) at 600 deg. C on different substrates, including glass, Si (100) and sapphire (0001) using tris(isopropylcyclopentadienyl)erbium and O{sub 2}. The effects of growth parameters such as the substrate, the O{sub 2} plasma activation and the temperature of organometallic precursor injection, on the nucleation/growth kinetics and, consequently, on film properties have been investigated. Specifically, very smooth (111)-oriented Er{sub 2}O{sub 3} thin films (the root mean square roughness is 0.3 nm) are achieved on Si (100), {alpha}-Al{sub 2}O{sub 3} (0001) and amorphous glass by MOCVD. Growth under O{sub 2} remote plasma activation results in an increase in growth rate and in (100)-oriented Er{sub 2}O{sub 3} films with high refractive index and transparency in the visible photon energy range.

Highly-efficient mid-infrared CW laser operation in a lightly-doped 3 at.% Er:SrF2 single crystal.

Science.gov (United States)

Su, Liangbi; Guo, Xinsheng; Jiang, Dapeng; Wu, Qinghui; Qin, Zhipeng; Xie, Guoqiang

2018-03-05

3 at.% Er:SrF 2 laser crystals with high optical quality were successfully grown using the temperature gradient technique (TGT). The intense mid-infrared emission was observed around 2.7 μm with excitation by a 970 nm LD. Based on the Judd-Ofelt theory, the emission cross-sections of the 4 I 13/2 - 4 I 11/2 transition were calculated by using the Fuchtbauer-Ladenburg (FL) method. Efficient continuous-wave laser operation at 2.8 µm was achieved with the lightly-doped 3 at.% Er:SrF 2 crystal pumped by a 970 nm laser diode. The laser output power reached up to 1.06 W with a maximum slope efficiency of 26%.

Resonantly cladding-pumped Yb-free Er-doped LMA fiber laser with record high power and efficiency.

Science.gov (United States)

Zhang, Jun; Fromzel, Viktor; Dubinskii, Mark

2011-03-14

We report the results of our power scaling experiments with resonantly cladding-pumped Er-doped eye-safe large mode area (LMA) fiber laser. While using commercial off-the-shelf LMA fiber we achieved over 88 W of continuous-wave (CW) single transverse mode power at ~1590 nm while pumping at 1532.5 nm. Maximum observed optical-to-optical efficiency was 69%. This result presents, to the best of our knowledge, the highest power reported from resonantly-pumped Yb-free Er-doped LMA fiber laser, as well as the highest efficiency ever reported for any cladding-pumped Er-doped laser, either Yb-co-doped or Yb-free.

Upconversion improvement in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles by doping Al{sup 3+} ions

Energy Technology Data Exchange (ETDEWEB)

Zhou, Haifang [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, Jiangsu (China); Wang, Xiechun; Lai, Yunfeng; Cheng, Shuying; Zheng, Qiao; Yu, Jinlin [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China)

2017-10-15

Rare-earth ion-doped upconversion (UC) materials show great potential applications in optical and optoelectronic devices due to their novel optical properties. In this work, hexagonal KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles (NPs) were successfully synthesized by a hydrothermal method, and remarkably enhanced upconversion luminescence in green and red emission bands in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs has been achieved by doping Al{sup 3+} ions under 980 nm excitation. Compared to the aluminum-free KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs sample, the UC fluorescence intensities of the green and red emissions of NPs doped with 10 at.% Al{sup 3+} ions were significantly enhanced by 5.9 and 7.3 times, respectively. Longer lifetimes of the doped samples were observed for the {sup 4}S{sub 3/2} state and {sup 4}F{sub 9/2} state. The underlying reason for the UC enhancement by doping Al{sup 3+} ions was mainly ascribed to distortion of the local symmetry around Er{sup 3+} ions and adsorption reduction of organic ligands on the surface of NPs. In addition, the influence of doping Al{sup 3+} ions on the structure and morphology of the NPs samples was also discussed. (orig.)

Effect of oxygen partial pressure on the microstructural, optical and gas sensing characterization of nanostructured Gd doped ceria thin films deposited by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Nagaraju P.

2017-12-01

Full Text Available Microstructural properties of 10 mol% gadolinium doped ceria (CeO2 thin films that were deposited on quartz substrate at substrate temperature of 1023 K by using pulsed laser deposition with different oxygen partial pressures in the range of 50–200 mTorr. The influence of oxygen partial pressure on microstructural, morphological, optical and gas sensing characterization of the thin films was systematically studied. The microstructure of the thin films was investigated using X-ray diffraction, atomic force microscopy and Raman spectroscopy. Morphological studies have been carried out using scanning electron microscope. The experimental results confirmed that the films were polycrystalline in nature with cubic fluorite structure. Optical properties of the thin films were examined using UV–vis spectrophotometer. The optical band gap calculated from Tauc’s relation. Gas sensing characterization has been carried at different operating temperatures (room temperature to 523 K for acetone gas. Response and recovery times of the sensor were calculated using transient response plot.

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

Science.gov (United States)

Rafique, Subrina; Karim, Md Rezaul; Johnson, Jared M.; Hwang, Jinwoo; Zhao, Hongping

2018-01-01

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ˜1.2 × 1018 cm-3 and ˜9.5 × 1017 cm-3 with mobilities of ˜72 cm2/V s and ˜42 cm2/V s, respectively.

Preparation of Rare Earth Doped Alumina-Siloxane Gel and Its ER Effect

Institute of Scientific and Technical Information of China (English)

李幼荣; 张明; 周兰香; 邱关明; 井上真一; 冈本宏

2002-01-01

Poly(methyl methacrylate) (PMMA) was used to wrap alumina-siloxane sol through emulsion polymerization. A kind of suspensions with notable ER effect was produced by fully mixing the prepared microcapsule with silicon oil. Meanwhile a series of PMMA wrapped alumina-siloxane gel doped with rare earths was obtained and its ER effect was tested, like viscosity of different rare earth ion doped samples in different powder concentrations and at different temperatures, at the same time, leak current density and dielectric constant were measured. Results show that the ER effect of this suspension is remarkable, and its stability is much better. The condition of emulsion polymerization and the mechanism of effect are discussed.

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

International Nuclear Information System (INIS)

Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

2013-01-01

Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

NIR luminescent Er{sup 3+}/Yb{sup 3+} co-doped SiO{sub 2}-ZrO{sub 2} nanostructured planar and channel waveguides: Optical and structural properties

Energy Technology Data Exchange (ETDEWEB)

Cunha, Cesar dos Santos [Departamento de Quimica, Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901, Ribeirao Preto/SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Quimica de Materiais - (GPQM), Departamento de Ciencias Naturais, Universidade Federal de Sao Joao Del Rei, Campus Dom Bosco, Praca Dom Helvecio, 74, 36301-160, Sao Joao Del Rei, MG (Brazil); Oliveira, Drielly Cristina de [Departamento de Quimica, Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901, Ribeirao Preto/SP (Brazil); Maia, Lauro June Queiroz [Grupo Fisica de Materiais, Instituto de Fisica, UFG, Campus Samambaia, Caixa Postal 131, 74001-970, Goiania/GO (Brazil); Gomes, Anderson Stevens Leonidas [Departamento de Fisica, Universidade Federal de Pernambuco, Cidade Universitaria, Recife/PE, 50670-901 (Brazil); Ribeiro, Sidney Jose Lima [Laboratorio de Materiais Fotonicos, Instituto de Quimica, UNESP, Caixa Postal 355, 14801-970, Araraquara/SP (Brazil); and others

2012-09-14

Optical and structural properties of planar and channel waveguides based on sol-gel Er{sup 3+} and Yb{sup 3+} co-doped SiO{sub 2}-ZrO{sub 2} are reported. Microstructured channels with high homogeneous surface profile were written onto the surface of multilayered densified films deposited on SiO{sub 2}/Si substrates by a femtosecond laser etching technique. The densification of the planar waveguides was evaluated from changes in the refractive index and thickness, with full densification being achieved at 900 Degree-Sign C after annealing from 23 up to 500 min, depending on the ZrO{sub 2} content. Crystal nucleation and growth took place together with densification, thereby producing transparent glass ceramic planar waveguides containing rare earth-doped ZrO{sub 2} nanocrystals dispersed in a silica-based glassy host. Low roughness and crack-free surface as well as high confinement coefficient were achieved for all the compositions. Enhanced NIR luminescence of the Er{sup 3+} ions was observed for the Yb{sup 3+}-codoped planar waveguides, denoting an efficient energy transfer from the Yb{sup 3+} to the Er{sup 3+} ion. Highlights: Black-Right-Pointing-Pointer Sol-gel high NIR luminescent nanostructured planar and channel waveguides. Black-Right-Pointing-Pointer Microstructured channels written by a femtosecond laser etching technique. Black-Right-Pointing-Pointer Transparent glass ceramic with rare earth-doped ZrO{sub 2} nanocrystals in a silica host. Black-Right-Pointing-Pointer Enhanced NIR luminescence, efficient energy transfer from the Yb{sup 3+} to the Er{sup 3+} ion. Black-Right-Pointing-Pointer New planar channel waveguides to be applied as EDWA in the C telecommunication band.

Spectroscopic and structural investigation of undoped and Er{sup 3+} doped hafnium silicate layers

Energy Technology Data Exchange (ETDEWEB)

Khomenkova, L., E-mail: khomen@ukr.net [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France); V. Lashkaryov Institute of Semiconductor Physics at NASU, 41 Pr. Nauky, Kyiv 03028 (Ukraine); An, Y.-T. [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France); Khomenkov, D. [Taras Shevchenko National University of Kyiv, Faculty of Physics, 4 Pr. Hlushkov, Kyiv 03022 (Ukraine); Portier, X.; Labbé, C.; Gourbilleau, F. [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France)

2014-11-15

This paper demonstrates the functionality of radio-frequency magnetron sputtering for the fabrication of undoped and Er-doped Si-rich-HfO{sub 2} films with specific structural and spectroscopic properties. The effect of post-deposition treatment on film properties was investigated by means of Fourier-transform infrared spectroscopy, Raman scattering and photoluminescence methods, as well as Transmission Electron microscopy. It was observed that annealing treatment at 850–1000 °C causes phase separation process and the formation of HfO{sub 2}, SiO{sub 2} and pure Si phases. This process stimulates also an intense light emission in the 700–950-nm spectral range under broad band excitation. The phase separation mechanism as well as the nature of radiative transitions were discussed. Photoluminescence was ascribed to carrier recombination in silicon clusters and host defects. The appearance of silicon clusters was also confirmed by the comparison of luminescent properties of pure HfO{sub 2}, SiO{sub 2}, Si-rich-HfO{sub 2} and Si-rich-SiO{sub 2} films. Additional argument for Si clusters’ formation was obtained under investigation of Er-doped Si-rich HfO{sub 2} films. These latter demonstrated 1.54-µm Er{sup 3+} luminescence under non-resonant excitation originating from an energy transfer from Si clusters towards Er{sup 3+} ions.

Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films

NARCIS (Netherlands)

García-Revilla, S.; Valiente, R.; Romanyuk, Y.E.; Utke, I.; Pollnau, Markus

KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed. Obtained results were compared with spectra given for bulk crystals. Upconversion experiments after direct Yb3+ excitation

Effect of CeO2 addition on electrical and optical properties of lithium borate glasses

International Nuclear Information System (INIS)

Gedam, R.S.; Ramteke, D.D.

2011-01-01

Rare earth (RE) ions play an important role in modern technology as an active ion in many optical materials. RE-doped glasses were used in many optical devices because of abundant number of the absorption and emission bands arising from the transitions between the RE elements energy levels. Among all rare earth, glasses containing CeO 2 are extensively studied for scintillating applications. Radiation length of CeO 2 containing lithium silicate glasses decreases and absorption edge in transmittance shift towards longer wavelength. In the present study an attempt has been made to verify similar results in borate containing glasses. Therefore glass series 15Li 2 O-xCeO 2 -(85''x)B 2 O 3 where x= 0.25, 0.5, 0.75, 1 mol% was prepared by conventional melt quench technique. Their electrical and optical properties have been investigated. It is observed that the conductivity of these glasses decreases while density, glass transition temperature and refractive index increases with the addition of CeO 2 . The conductivity of the glasses is mostly controlled by the activation energy. Since the lithium fraction in the present series is kept constant, the decrease in conductivity for glasses may be attributed to the reduction in the number of available vacant sites for the mobile lithium ions when boron is substituted with CeO 2 . The radiation length was determined using density values and it was found to decrease with the addition of CeO 2 . The absorption coefficient a were determined near the absorption edge of different photon energy for all glass samples and plot of (αhν) 1/2 Vs. hν (Tauc's plot) is shown. It is observed that the optical band gap energy (E g Opt ) decreases with the addition of CeO 2

H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

Energy Technology Data Exchange (ETDEWEB)

Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

2017-02-28

Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

White phosphor using Yb3+-sensitized Er3+-and Tm3+-doped sol-gel derived lead-fluorosilicate transparent glass ceramic excited at 980 nm

Science.gov (United States)

Tavares, M. C. P.; da Costa, E. B.; Bueno, L. A.; Gouveia-Neto, A. S.

2018-01-01

Generation of primary colors and white light through frequency upconversion using sol-gel derived 80SiO2:20PbF2 vitroceramic phosphors doped with Er3+, Er3+/Yb3+, Tm3+/Yb3+, and Er3+/Tm3+/Yb3+ excited at 980 nm is demonstrated. For Er3+ and Er3+/Yb3+ doped samples emissions were obtained in the blue (410 nm), green (530, and 550 nm) and red (670 nm) regions, corresponding to the 2H9/2 → 4I15/2,2H11/2 → 4I15/2, 4S3/2 → 4I152 and 4F9/2 → 4I15/2 transitions of Er3+, respectively. The codoping with Yb3+ ions altered the spectral profile of most of the emissions compared to the single doped samples, resulting in changes in the emitted color, in addition to a significant increase in the emission intensity. In Tm3+/Yb3+ co-doped samples visible emissions in the blue (480 nm), and red (650 nm), corresponding to transitions 1G4 → 3H6 and 1G4 → 3F4 of Tm3+, respectively, were obtained. The emission intensity around 480 nm overcome the red emission, and luminescence showed a predominantly blue tone. White light with CIE-1931 coordinates (0.36; 0.34) was produced by homogeneously mixing up powders of heat treated at 400 °C co-doped samples 5.0Er3+/5.0Yb3+ and 0.5Tm3+/2.5Yb3+ in the mass ratio of 13%, and 87%, respectively. The measured emission spectrum for a sample resulting from the mixture showed a profile with very good agreement with the spectrum found from the superimposition of the spectra of the co-doped samples.

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Investigation of thermal stability and spectroscopic properties in Er3+ doped bismuth-boron-germanium glasses

International Nuclear Information System (INIS)

Nie Qiuhua; Lu Longjun; Dai Shixun; Xu Tiefeng; Shen Xiang; Zhang Xudong; Liang Xiaowei; Zhang Xianghua

2007-01-01

A series of Er 3+ -doped 50Bi 2 O 3 -(50-x)B 2 O 3 -xGeO 2 +0.5 wt% Er 2 O 3 (x=0, 5, 10, 15, 20 mol%) glasses were prepared. The thermal stability, absorption spectra, emission spectra and lifetime of the 4 I 13 / 2 level of Er 3+ ions were measured and studied. It is found that the absorption cross-section of Er 3+ , emission intensity and lifetime of the 4 I 13 / 2 level of Er 3+ increase with increasing GeO 2 content in the glass composition, while the fluorescence full-width at half-maximum (FWHM) at 1.5 μm of Er 3+ is about 79 nm in x=20 mol% glass sample under 970 nm pump. The obtained data suggest that this system glass can be used as a candidate host material for potential broadband optical amplifiers

Infrared emissions in MgSrAl{sub 10}O{sub 17}:Er{sup 3+} phosphor co-doped with Yb{sup 3+}/Ba{sup 2+}/Ca{sup 2+} obtained by solution combustion route

Energy Technology Data Exchange (ETDEWEB)

Singh, Vijay, E-mail: vijayjiin2006@yahoo.com [Physical Chemistry, Institute for Pure and Applied Chemistry and Center of Interface Science, University of Oldenburg, 26129 Oldenburg (Germany); Kumar Rai, Vineet [Department of Applied Physics, Indian School of Mines, Dhanbad 826 004 (India); Venkatramu, V. [Department of Physics, Yogi Vemana University, Kadapa 516 003 (India); Chakradhar, R.P.S. [CSIR-National Aerospace, Bangalore 560 017 (India); Hwan Kim, Sang [Department of Chemical Engineering, Konkuk University, Seoul 143-701 (Korea, Republic of)

2013-02-15

An intense infrared emitting MgSrAl{sub 10}O{sub 17}:Er{sup 3+} phosphor co-doped with Yb{sup 3+}, Ba{sup 2+} and Ca{sup 2+} ions have been prepared by a solution combustion method. Phase purity of the derived compounds was confirmed by X-ray diffraction technique. The vibrational properties of MgSrAl{sub 10}O{sub 17} phosphor was studied by Fourier transform infrared spectroscopy. The broad and strong infrared emission of Er{sup 3+} ions at around 1.53 {mu}m was observed upon excitation at 980 nm. Effect of co-doping with the Yb{sup 3+}{sub ,} Ba{sup 2+} and Ca{sup 2+} ions on the infrared luminescence intensity of Er{sup 3+} ions and the mechanism responsible for the variation in the infrared intensity have been discussed. The results indicate that these materials may be suitable for the optical telecommunication window and wavelength division multiplexing applications. - Highlights: Black-Right-Pointing-Pointer The hexagonal phase of MgSrAl{sub 10}O{sub 17} could be obtained by the low temperature combustion method. Black-Right-Pointing-Pointer The broad and strong infrared emission of Er{sup 3+} ions at around 1.53 {mu}m was observed. Black-Right-Pointing-Pointer Effect of co-doping with the Yb{sup 3+}{sub ,} Ba{sup 2+} and Ca{sup 2+} ions on the infrared luminescence intensity of Er{sup 3+} were reported.

Optical, structural and photocatalysis properties of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Bensouici, F., E-mail: fbensouici@yahoo.fr [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Bououdina, M.; Dakhel, A.A. [Department of Physics, College of Science, University of Bahrain, PO Box 32038 (Bahrain); Tala-Ighil, R.; Tounane, M.; Iratni, A. [Department of Physics, URMPE Unite, UMBB University, 35000 Boumerdes (Algeria); Souier, T. [Department of Physics, College of Science, Sultan Qaboos University, PO Box 36 (Oman); Liu, S.; Cai, W. [Key laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Technology, Center for Environmental and Energy Nanomaterials, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2017-02-15

Highlights: • A simple chemical route to obtain thin layers of Cu doped TiO{sub 2}. • Detailed structure analysis was carried out by Rietveld refinements. • Forming the CuO phase decreases the efficiency photocatalysis of TiO{sub 2}. - Abstract: Pure and Cu{sup +2} doped TiO{sub 2} thin films have been successfully deposited onto glass substrate by sol–gel dip-coating. The films were annealed at 450 °C for 1 h and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM-EDX), atomic force microscopy (AFM), UV–vis spectrophotometer and photocatalytic degradation of methylene blue. XRD confirmed the presence of two phases at higher Cu concentration; TiO{sub 2} anatase and CuO. AFM analysis showed that the surface roughness increases within increasing Cu content as well as the presence of large aggregates at higher Cu content. SEM observations confirmed the granular structure of the films, and EDX analysis revealed a low solubility limit (effective doping) of Cu into TiO{sub 2} lattice. It was found that the optical band gap energy decreases with increasing Cu content. At constant irradiation time, the photo-degradation of methylene blue rate decreased with increasing concentration of Cu{sup +2}.

Magnetic and structural study of Cu-doped TiO2 thin films

International Nuclear Information System (INIS)

Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

2007-01-01

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

Crystal electric field splitting of R{sup 3+}-ions in pure and Co- and Cu-doped RNi{sub 2}B{sub 2}C (R=Ho, Er, Tm)

Energy Technology Data Exchange (ETDEWEB)

Gasser, U.; Allenspach, P.; Henggeler, W.; Zolliker, M.; Furrer, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

From the crystal-electric-field (CEF) splitting of the R{sup 3+}-ions, the CEF parameters of RNi{sub 2}B{sub 2}C (R=Ho, Er, Tm) were deduced. In order to get information about the influence of the variation of the density of states (DOS) at the Fermi level (E{sub F}), CEF spectroscopy measurements with Co- and Cu-doped ErNi{sub 2}B{sub 2}C-samples were performed. (author) 1 fig., 1 tab., 1 ref.

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-01-01

We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Chunfeng Lan

2018-02-01

Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

A Humidity Sensor Based on Nb-doped Nanoporous TiO2 Thin Film

Directory of Open Access Journals (Sweden)

Mansoor Anbia

2011-11-01

Full Text Available The humidity sensing properties of the sensor fabricated from Nb-doped nanoporous TiO2 by screen-printing on the alumina substrate with Ag-Pd interdigital electrodes have been investigated. The nanoporous thin film has been prepared by sol-gel technique. The product has been characterized by X-ray diffraction and scanning electron microscopy to analyze the structure and its morphology. It is found that the impedance of this sensor changes more than four orders of magnitude in the relative humidity (RH range of 11–95 % at 25 °C. The response and recovery time of the sensor are about 19 and 25 s, respectively, during the RH variation from 11 to 95 %. The sensor shows high humidity sensitivity, rapid response and recovery, prominent stability, good repeatability and narrow hysteresis loop. These results indicate that Nb-doped nanoporous TiO2 thin films have a great potential for humidity sensing applications in room temperature operations.

Facile hydrothermal synthesis of CeO 2 nanopebbles

Indian Academy of Sciences (India)

Cerium oxide (CeO2) nanopebbles have been synthesized using a facile hydrothermal method. X-ray diffraction pattern (XRD) and transmission electron microscopy analyses confirm the presence of CeO2 nanopebbles. XRD shows the formation of cubic fluorite CeO2 and the average particle size estimated from the ...

Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

2014-01-01

In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

Effect of cerium oxide doping on the performance of CaO-based sorbents during calcium looping cycles.

Science.gov (United States)

Wang, Shengping; Fan, Shasha; Fan, Lijing; Zhao, Yujun; Ma, Xinbin

2015-04-21

A series of CaO-based sorbents were synthesized through a sol-gel method and doped with different amounts of CeO2. The sorbent with a Ca/Ce molar ratio of 15:1 showed an excellent absorption capacity (0.59 gCO2/g sorbent) and a remarkable cycle durability (up to 18 cycles). The admirable capture performance of CaCe-15 was ascribed to its special morphology formed by the doping of CeO2 and the well-distributed CeO2 particles. The sorbents doped with CeO2 possessed a loose shell-connected cross-linking structure, which was beneficial for the contact between CaO and CO2. CaO and CeO2 were dispersed homogeneously, and the existence of CeO2 also decreased the grain size of CaO. The well-dispersed CeO2, which could act as a barrier, effectively prevented the CaO crystallite from growing and sintering, thus the sorbent exhibited outstanding stability. The doping of CeO2 also improved the carbonation rate of the sorbent, resulting in a high capacity in a short period of time.

Modifying the size and uniformity of upconversion Yb/Er:NaGdF4 nanocrystals through alkaline-earth doping.

Science.gov (United States)

Lei, Lei; Chen, Daqin; Huang, Ping; Xu, Ju; Zhang, Rui; Wang, Yuansheng

2013-11-21

NaGdF4 is regarded as an ideal upconversion (UC) host material for lanthanide (Ln(3+)) activators because of its unique crystal structure, high Ln(3+) solubility, low phonon energy and high photochemical stability, and Ln(3+)-doped NaGdF4 UC nanocrystals (NCs) have been widely investigated as bio-imaging and magnetic resonance imaging agents recently. To realize their practical applications, controlling the size and uniformity of the monodisperse Ln(3+)-doped NaGdF4 UC NCs is highly desired. Unlike the routine routes by finely adjusting the multiple experimental parameters, herein we provide a facile and straightforward strategy to modify the size and uniformity of NaGdF4 NCs via alkaline-earth doping for the first time. With the increase of alkaline-earth doping content, the size of NaGdF4 NCs increases gradually, while the size-uniformity is still retained. We attribute this "focusing" of size distribution to the diffusion controlled growth of NaGdF4 NCs induced by alkaline-earth doping. Importantly, adopting the Ca(2+)-doped Yb/Er:NaGdF4 NCs as cores, the complete Ca/Yb/Er:NaGdF4@NaYF4 core-shell particles with excellent size-uniformity can be easily achieved. However, when taking the Yb/Er:NaGdF4 NCs without Ca(2+) doping as cores, they could not be perfectly covered by NaYF4 shells, and the obtained products are non-uniform in size. As a result, the UC emission intensity of the complete core-shell NCs increases by about 30 times in comparison with that of the cores, owing to the effective surface passivation of the Ca(2+)-doped cores and therefore protection of Er(3+) in the cores from the non-radiative decay caused by surface defects, whereas the UC intensity of the incomplete core-shell NCs is enhanced by only 3 times.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

International Nuclear Information System (INIS)

Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

2015-01-01

We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Science.gov (United States)

Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-02-01

We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

1.54 μm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode

International Nuclear Information System (INIS)

Zhao, W Q; Wang, P F; Ran, G Z; Ma, G L; Zhang, B R; Liu, W M; Wu, S K; Dai, L; Qin, G G

2006-01-01

By doping an erbium complex, erbium (III) 2, 4-pentanedionate (Er(acac) 3 ), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO 2 /NPB/ALQ/ ALQ:Er(acac) 3 /ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 μm emission from Er 3+ is observed. The impact of doping level of Er(acac) 3 in ALQ on 1.54 μm electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac) 3 to ALQ is found at 1:60. A competitive EL mechanism from the ALQ and Er(acac) 3 is found and the Er 3+ ions excitations are attributed to energy transfer from the ligands to Er ions

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

Science.gov (United States)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Effect of Er-doping on the structural and optical properties of Cd{sub 2}V{sub 2}O{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Lozada-Morales, R.; Cid-Garcia, A.; Palomino-Merino, R. [Benemerita Universidad Autonoma de Puebla, Postgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Av. 14, San Claudio, Col. San Manuel, Puebla (Mexico); Lopez-Calzada, G.; Jimenez-Sandoval, S. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro. 76001 (Mexico); Zayas, Ma.E. [Departamento de Investigacion en Fisica de la Universidad de Sonora, Edificio 3I, Blvd. Edificio 5 E, Luis Encinas s/n, Col. Centro, 83000 Hermosillo, Sonora (Mexico); Zelaya-Angel, O. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados, P.O. Box 14-740, Mexico D. F. 07360 (Mexico); Carmona-Rodriguez, J. [Instituto Tecnologico Superior de Poza Rica, Calle Luis Donaldo Colosio S/N, Col. Arroyo del Maiz, C.P. 93230, Poza Rica, Veracruz (Mexico); Rubio-Rosas, E. [Centro de Vinculacion Universitaria, Av. 14, San Claudio, Col. San Manuel, Puebla (Mexico); Portillo-Moreno, O. [Facultad de Ciencias Quimicas, Av. 14, San Claudio, Col. San Manuel, Puebla (Mexico)

2012-11-15

The melt-quenching method was used to prepare two groups of samples using CdO and V{sub 2}O{sub 5} as starting materials. Taking into account that a crystalline-amorphous phase transition would be expected for the CdO-V{sub 2}O{sub 5} system, a first batch was prepared varying the proportions of CdO and V{sub 2}O{sub 5} in the intervals 60-95 and 40-5 wt%, respectively. With the aim of investigating the effect of erbium in the phase transition and crystalline quality of the first group of samples, a second batch was fabricated with the same proportions of CdO and V{sub 2}O{sub 5}, with the addition of 5 wt% of Er(NO{sub 3})5H{sub 2}O as source of Er{sup 3+} ions. It was found that crystalline or amorphous samples could be obtained depending on the relative concentrations of CdO and V{sub 2}O{sub 5}, and that the borderline between amorphous and crystalline samples was affected by the incorporation of Er. From X-ray diffraction, it was possible to identify the formation of the ternary compound Cd{sub 2}V{sub 2}O{sub 7} in the crystalline cases. The Raman and infrared bands in these samples were in agreement with the lattice modes of Cd{sub 2}V{sub 2}O{sub 7}. Additionally, an improvement in the crystalline quality of Cd{sub 2}V{sub 2}O{sub 7} was obtained for the Er-doped samples. The effect of the local environment around the Er{sup 3+} ions on the room temperature photoluminescence was also investigated for the amorphous and crystalline samples. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effects of alkali ions on thermal stability and spectroscopic properties of Er{sup 3+}-doped gallogermanate glasses

Energy Technology Data Exchange (ETDEWEB)

Shi, D.M.; Zhao, Y.G.; Wang, X.F.; Liao, G.H. [Department of Materials Science and Engineering, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Zhao, C. [Department of Physics, South China University of Technology, Guangzhou 510641 (China); MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Peng, M.Y. [MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Zhang, Q.Y., E-mail: qyzhang@scut.edu.c [MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)

2011-02-01

Since information transportation capacity of optical communication network increases rapidly, new optical materials are always demanded with gain bandwidth desirably much broader than traditional erbium-doped silica fiber amplifier (EDFA). We show here in this paper the erbium-doped gallogermanate glasses with a full-width at half-maximum (FWHM) more than 50 nm. Incorporation of alkali ions such as Li{sup +}, Na{sup +}, K{sup +} into the system can on the one hand improve the thermal stability of the glasses, and on the other hand enhance the emission at 1.5 {mu}m due to the {sup 4}I{sub 13/2{yields}}{sup 4}I{sub 15/2} transition of Er{sup 3+} and suppress the upconversion process at the same time. This particularly works best for the case of K{sup +} inclusion. This work might give a general idea on controlling the Er{sup 3+} luminescence by simply adjusting the glass component and find a potential laser glass applicable to developing new broadband fiber amplifier. -- Research highlights: {yields} We report on spectroscopic properties of Er{sup 3+}-doped Ga{sub 2}O{sub 3}-GeO{sub 2}-R{sub 2}O (GGR, R=Li, Na and K) glasses for 1.53 {mu}m fiber amplifier. Effects of alkali metal ions on the thermal stability and spectroscopic properties of Er{sup 3+}-doped GGR glasses have been investigated. {yields} Incorporation of alkali ions such as Li{sup +}, Na{sup +}, K{sup +} into the system can on the one hand improve the thermal stability of the glasses, and on the other hand enhance the emission at 1.5 {mu}m due to the {sup 4}I{sub 13/2{yields}}{sup 4}I{sub 15/2} transition of Er{sup 3+} and suppress the upconversion process at the same time. This particularly works best for the case of K{sup +} inclusion. This work might give a general idea on controlling the Er{sup 3+} luminescence by simply adjusting the glass component and find a potential laser glass applicable to developing new broadband fiber amplifier.

Committee on Earth Observation Satellites (CEOS) perspectives about the GEO Supersite initiative

Science.gov (United States)

Lengert, Wolfgang; Zoffoli, Simona; Giguere, Christine; Hoffmann, Joern; Lindsay, Francis; Seguin, Guy

2014-05-01

well provide information about the satellite data provided by CEOS for the different Supersites. ASI - COSMO-Skymed CNES - SPOT-5, Pleiades CSA - Radarsat-2 DLR - TerraSAR-X, TanDEM-X ESA - ERS-1/2, Envisat, Sentinel (on behalf of EC - Copernicus) JAXA - ALOS-2, ALOS-1, J-ERS NASA - ASTER

In-situ synchrotron x-ray study of the crystallization behavior of Ce0.9La0.1O2−x thin films deposited on NiW alloy substrates by chemical solution method

DEFF Research Database (Denmark)

Yue, Zhao; Grivel, Jean-Claude; Abrahamsen, Asger Bech

2011-01-01

The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860°C, indicating that interfacial nu...... by diffusion. The success of this work demonstrates the possibility of studying crystallization behaviors of solution derived films using a non-destructive method, which has the potential of being applicable to most types of thin film samples.......The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860°C, indicating that interfacial...

Analysis of structure origin and luminescence properties of Yb(3+)-Er(3+) co-doped fluorophosphate glass.

Science.gov (United States)

Chen, Fangze; Jing, Xufeng; Wei, Tao; Wang, Fengchao; Tian, Ying; Xu, Shiqing

2014-08-14

The near infrared luminescence properties of Yb(3+)-Er(3+) co-doped fluorophosphate glasses have been investigated. The various effects on structure and 1.53 μm emission were analyzed as a function of Yb(3+) concentration. The energy transfer mechanism was proposed. High measured lifetime (10.75 ms), large effective full widths at half maximum (73.71 nm) and large gain per unit length (62.8 × 10(-)(24)cm(2)s) have been achieved in prepared glass. The present glass co-doped with 6mol% YbF3 and 2 mol% ErF3 showed magnificent luminescence properties for telecommunication application. Copyright © 2014 Elsevier B.V. All rights reserved.

Effect of iron doping on structural and optical properties of TiO2 thin film by sol–gel routed spin coating technique

Directory of Open Access Journals (Sweden)

Stephen Lourduraj

2017-08-01

Full Text Available Thin films of iron (Fe-doped titanium dioxide (Fe:TiO2 were prepared by sol–gel spin coating technique and further calcined at 450∘C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, ultraviolet–visible spectroscopy (UV–vis and atomic force microscopic (AFM techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.

Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-11-02

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

Hydrothermal synthesis of superparamagnetic and red luminescent bifunctional Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er core@shell monodisperse nanoparticles and their subsequent ligand exchange in water

Energy Technology Data Exchange (ETDEWEB)

Qin, Zhenli; Du, Sinan; Luo, Yang; Liao, Zhijian; Zuo, Fang, E-mail: polymerzf@swun.cn; Luo, Jianbin; Liu, Dong

2016-08-15

Graphical abstract: An efficient hydrothermal method was used to fabricate the superparamagnetic and red luminescent bifunctional Fe{sub 3}O{sub 4}@Mn{sup 2(*)+}-doped NaYF{sub 4}:Yb/Er nanoparticles (NPs) with core@shell structures through a seed-growth procedure. Then using PEG phosphate ligand to displace oleate from the as-synthesized NPs, hydrophilic Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er NPs with good water solubility are obtained. - Highlights: • Homogeneous size distribution of magnetic-upconversion core@shell structured nanoparticles (NPs) were synthesized. • The core@shell nanostructures were obtained by seed-growth method. • The oleic acid coated Fe{sub 3}O{sub 4} NPs were used as seeds and cores. • The magnetic-upconversion NPs emitted red luminescence under a 980 nm laser. • Synthesized magnetic-upconversion NPs were phase transferred using ligand exchange process. - Abstract: We report the use of an efficient hydrothermal method to synthesize superparamagnetic and red luminescent bifunctional Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er nanoparticles (NPs) with core@shell structures via a seed-growth procedure. Oleic acid coated Fe{sub 3}O{sub 4} (OA-Fe{sub 3}O{sub 4}) NPs were initially synthesized using a coprecipitation method. The as-synthesized OA-Fe{sub 3}O{sub 4} NPs were then used as seeds, on which the red upconversion luminescent shell (Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er) was formed. Furthermore, hydrophobic to hydrophilic surface modification of the Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er NPs was achieved via a ligand exchange method where oleic acid was displaced by a PEG phosphate ligand [PEG = poly(ethylene glycol)]. These materials were characterized by means of transmission electron microscopy (TEM), X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, and vibrating sample magnetometry (VSM). The Fe{sub 3}O{sub 4} cores were uniformly coated with a Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er

Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

International Nuclear Information System (INIS)

Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

2013-01-01

To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

Oxygen plasma effects on zero resistance behavior of Yb,Er-doped YBCO (123) based superconductors

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Helmut; Rathmann, Dirk [Department of Physics, Biophysics, and Photosynthesis, Freie Universitaet Berlin (Germany); Banko, Franziska; Steinhart, Martin [Physical Chemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany); Nordmann, Joerg; Voss, Benjamin [Inorganic Chemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany); Walder, Lorenz [Organic Chemistry, Molecular Electrochemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany)

2014-08-15

Rare-earth doped YBa{sub 2}Cu{sub 3}O{sub 7-δ} samples were synthesized starting from the corresponding oxides Y{sub 2}O{sub 3}, Yb{sub 2}O{sub 3}, Er{sub 2}O{sub 3}, CuO as well as Ba(OH){sub 2} by heating to 950 C under air. The doping concentrations were adjusted to 15 % Yb, 7 % Er and 20 % Yb, 15 % Er, respectively, with respect to the yttrium content. The orthogonal phased (123) YBCO ceramics were exposed to an oxygen plasma for 140 and 380 min. Zero resistance temperature (T{sub c,0}) was determined by measuring the resistivity-temperature dependence using a classical four point measurement approach. Under optimal conditions with respect to the material composition and the oxygen treatment an unusual high zero resistance temperature of 97.5 K (T{sub c,onset} ∼ 101 K) was achieved. This represents an increase of T{sub c,0} by 7.5 K. The oxygen treatment could not be monitored by IR spectroscopy, X-ray fluorescence spectroscopy, and X-ray powder diffraction. The results showed good reproducibility. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhancement of magnetic and ferroelectric properties of BiFeO3 by Er and transition element (Mn, Co) co-doping

International Nuclear Information System (INIS)

Han, Yumin; Mao, Weiwei; Quan, Chuye; Wang, Xingfu; Yang, Jianping; Yang, Tao; Li, Xing’ao

2014-01-01

Highlights: • BiFeO 3 , Bi 0.8 Er 0.2 FeO 3 , Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 and Bi 0.8 Er 0.2 Fe 0.9 Co 0.1 O 3 nanoparticles were prepared by sol–gel method. • The introduction of Er and Mn, Co into BiFeO 3 leads into a phase transition with reduced grain size. • The phase transformation combined with size reduction has significantly increased saturated polarization (Ps), remanent polarization (Pr) and saturated magnetization (Ms), remanent magnetization (Mr) behaviors of the doped samples with the same variation trend. • The formation of dipolar defect complexes (DDCs) in the doped samples may also contribute to the improved ferroelectric property. • Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 exhibits significantly improved ferroelectric and ferromagnetic properties. - Abstract: BiFeO 3 (BFO), Bi 0.8 Er 0.2 FeO 3 (BEFO), Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 (BEFMO) and Bi 0.8 Er 0.2 Fe 0.9 Co 0.1 O 3 (BEFCO) nanoparticles were prepared by sol–gel method having an average size of 200 nm for BFO, under100 nm for BEFO and under 60 nm for BEFMO and BEFCO. Phase transition from a rhombohedral symmetry (R3c) for BFO to an orthorhombic symmetry (Ibmm) for BEFO, BEFMO and BEFCO has been observed. The phase transformation combined with size reduction has significantly improved both ferroelectric and ferromagnetic behaviors of the doped samples in a similar way. The formation of dipolar defect complexes (DDCs) in the doped samples also contributes to the improved ferroelectric property with saturated polarization (Ps) of 0.375 μC/cm 2 and remanent polarization (Pr) of 0.244 μC/cm 2 for BEFMO. Size effect may also impact the simultaneously developed Pr for BEFMO and BEFCO. Owning to the interactions between the ferromagnetic and antiferromagnetic microdomains, improved saturated magnetization (Ms) and remanent magnetization (Mr) are also observed in BEFMO

Structural and spectroscopic studies on Er{sup 3+} doped boro-tellurite glasses

Energy Technology Data Exchange (ETDEWEB)

Selvaraju, K. [Department of Physics, Gandhigram Rural University, Gandhigram - 624 302 (India); Marimuthu, K., E-mail: mari_ram2000@yahoo.com [Department of Physics, Gandhigram Rural University, Gandhigram - 624 302 (India)

2012-04-01

Er{sup 3+} doped boro-tellurite glasses with the chemical composition (69-x)B{sub 2}O{sub 3}-xTeO{sub 2}-15MgO-15K{sub 2}O-1Er{sub 2}O{sub 3} (where x=0, 10, 20, 30 and 40 wt%) have been prepared and their structural and spectroscopic behavior were studied and reported. The varying tellurium dioxide content in the host matrix that results, changes in structural and spectroscopic behavior around Er{sup 3+} ions are explored through XRD, FTIR, UV-VIS-NIR and luminescence measurements. The XRD pattern confirms the amorphous nature of the prepared glasses and the FTIR spectra explore the fundamental groups and the local structural units in the prepared boro-tellurite glasses. The bonding parameters ({beta}{sup Macron} and {delta}) have been calculated from the observed band positions of the absorption spectra to claim the ionic/covalent nature of the prepared glasses. The Judd-Ofelt (JO) intensity parameters {Omega}{sub {lambda}} ({lambda}=2, 4 and 6) were determined through experimental and calculated oscillator strengths obtained from the absorption spectra and their results are studied and compared with reported literature. The variation in the JO parameters {Omega}{sub {lambda}} ({lambda}=2, 4 and 6) with the change in chemical composition have been discussed in detail. The JO parameters have also been used to derive the important radiative properties like transition probability (A), branching ratio ({beta}{sub R}) and peak stimulated emission cross-section ({sigma}{sub P}{sup E}) for the excited state transitions {sup 2}H{sub 9/2}{yields}{sup 4}I{sub 15/2} and {sup 2}H{sub 11/2} and {sup 4}S3{sub /2}{yields}{sup 4}I{sub 15/2} of the Er{sup 3+} ions and the results were studied and reported. Using Davis and Mott theory, optical band gap energy (E{sub opt}) values for the direct and indirect allowed transitions have been calculated and discussed along with the Urbach energy values for the prepared Er{sup 3+} doped boro-tellurite glasses in the present study. The

Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

International Nuclear Information System (INIS)

Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

2010-01-01

The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

Three mode Er3+ ring-doped fiber amplifier for mode-division multiplexed transmission

NARCIS (Netherlands)

Jung, Y.; Kang, Q.; Sleiffer, V.A.J.M.; Inan, B.; Kuschnerov, M.; Veljanovski, V.; Corbett, B.; Winfield, R.; Li, Z.; Teh, P.S.; Dhar, A.; Sahu, J.K.; Poletti, F.; Alam, S.U.; Richardson, D.J.

2013-01-01

We successfully fabricate three-mode erbium doped fiber with a confined Er3+ doped ring structure and experimentally characterize the amplifier performance with a view to mode-division multiplexed (MDM) transmission. The differential modal gain was effectively mitigated by controlling the relative

Microwave hydrothermal synthesis and upconversion properties of Yb3+/Er3+ doped YVO4 nanoparticles.

Science.gov (United States)

Kshetri, Yuwaraj K; Regmi, Chhabilal; Kim, Hak-Soo; Lee, Soo Wohn; Kim, Tae-Ho

2018-05-18

Yb 3+ and Er 3+ doped YVO 4 (Yb 3+ /Er 3+ :YVO 4 ) nanoparticles with highly efficient near-infrared to visible upconversion properties have been synthesized by microwave hydrothermal process. Uniform-sized Yb 3+ /Er 3+ :YVO 4 nanoparticles were synthesized within 1 h at 140 °C which is relatively faster than the conventional hydrothermal process. Under 980 nm laser excitation, strong green and less strong red emissions are observed which are attributed to 2 H 11/2 , 4 S 3/2 to 4 I 15/2 and 4 F 9/2 to 4 I 15/2 transitions of Er 3+ respectively. The emission intensity is found to depend strongly on the concentration of Yb 3+ . The quadratic dependence of upconversion intensity on the excitation power indicates that the upconversion process is governed by two-photon absorption process.

Microwave hydrothermal synthesis and upconversion properties of Yb3+/Er3+ doped YVO4 nanoparticles

Science.gov (United States)

Kshetri, Yuwaraj K.; Regmi, Chhabilal; Kim, Hak-Soo; Wohn Lee, Soo; Kim, Tae-Ho

2018-05-01

Yb3+ and Er3+ doped YVO4 (Yb3+/Er3+:YVO4) nanoparticles with highly efficient near-infrared to visible upconversion properties have been synthesized by microwave hydrothermal process. Uniform-sized Yb3+/Er3+:YVO4 nanoparticles were synthesized within 1 h at 140 °C which is relatively faster than the conventional hydrothermal process. Under 980 nm laser excitation, strong green and less strong red emissions are observed which are attributed to 2H11/2, 4S3/2 to 4I15/2 and 4F9/2 to 4I15/2 transitions of Er3+ respectively. The emission intensity is found to depend strongly on the concentration of Yb3+. The quadratic dependence of upconversion intensity on the excitation power indicates that the upconversion process is governed by two-photon absorption process.

Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

Directory of Open Access Journals (Sweden)

Shougui Ning

2018-02-01

Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

Photocatalytic performance of Sn-doped and undoped TiO2 nanostructured thin films under UV and vis-lights

International Nuclear Information System (INIS)

Arpac, E.; Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, Nadir; Sayilkan, H.

2007-01-01

Sn-doped and undoped nano-TiO 2 particles have been synthesized by hydrotermal process without solvent at 200 deg. C in 1 h. Nanostructure-TiO 2 based thin films have been prepared on glass substrate by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, SEM, BET and UV-vis-NIR techniques. The photocatalytic performance of the films were tested for degradation of Malachite Green dye in solution under UV and vis-lights. The results showed that (a) hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water, (b) the coated surfaces have nearly super-hydrophilic properties and (c) the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO 2 thin film

Emission properties of polymer composites doped with Er3+:Y2O3 nanopowders

Science.gov (United States)

Anders, Krzysztof; Jusza, Anna; Baran, Magdalena; Lipińska, Ludwika; Piramidowicz, Ryszard

2012-10-01

In this work we report the recent results of our investigation on visible emission properties of the PMMA-based polymer nanocomposites doped with Er3+:Y2O3 nanopowders. The set of active nanopowders, and polymer films, differing in active ions concentration, was characterized with respect of their luminescent properties in the green spectral range, available to a limited extent for semiconductor lasers. In particular - the concentration dependent emission spectra and fluorescence dynamics profiles were measured under direct (single photon) and up-converted excitation, enabling the comparison of luminescent properties of developed nanocomposite materials and original nanopowders, optimization of erbium dopant concentration as well as discussion of excitation mechanisms and analysis of the efficiency of depopulation processes.

TiO2 and Cu/TiO2 Thin Films Prepared by SPT

Directory of Open Access Journals (Sweden)

S. S. Roy

2015-12-01

Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

Ag2O dependent up-conversion luminescence properties in Tm3+/Er3+/Yb3+ co-doped oxyfluorogermanate glasses

International Nuclear Information System (INIS)

Hu, Yuebo; Qiu, Jianbei; Song, Zhiguo; Zhou, Dacheng

2014-01-01

Up-conversion (UC) luminescence properties of Ag/Tm 3+ /Er 3+ /Yb 3+ co-doped oxyfluorogermanate glasses have been studied to assess the effective role of silver nanoparticles as a sensitizer for Tm 3+ and Er 3+ ions. The X-ray diffraction patterns obtained in this work do not reveal any crystalline phase in the glass. However, the absorption spectra reveal that surface plasmons resonance band of Ag undergoes a distinct split with two maxima and a very broad absorption peak with a background that extends toward the near infrared (NIR) with the increasing of Ag 2 O added concentration. Transmission electron microscope images confirm that silver nanoparticles have been precipitated from matrix glasses and show their distribution, size, and shapes. In addition, changes in UC luminescence intensity of four emission bands 476, 524, 546, and 658 nm corresponding to 1 G 4 → 3 H 6 (Tm 3+ ), ( 2 H 11/2 , 4 S 3/2 ) → 4 I 15/2 (Er 3+ ), and 4 F 9/2 → 4 I 15/2 (Er 3+ ) transitions, respectively, as a function of silver addition to the base composition have been measured under 980 nm excitation. It is confirmed that Ag 2 O added concentration plays an important role in increasing the UC luminescence intensity; however, further increase in Ag 2 O added concentration reduces the intensity

Silver nanoparticles enhanced luminescence properties of Er³⁺ doped tellurite glasses: Effect of heat treatment

Energy Technology Data Exchange (ETDEWEB)

Fares, Hssen; Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Department of Physics, Sciences Faculty of Tunis, University Tunis ElManar 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan)

2014-09-28

Tellurite glasses doped Er³⁺ ions and containing Silver nanoparticles (Ag NPs) are prepared using melt quenching technique. The nucleation and growth of Ag NPs were controlled by a thermal annealing process. The X-ray diffraction pattern shows no sharp peak indicating an amorphous nature of the glasses. The presence of Ag NPs is confirmed from transmission electron microscopy micrograph. Absorption spectra show typical surface plasmon resonance (SPR) band of Ag NPs within the 510–550 nm range in addition to the distinctive absorption peaks of Er³⁺ ions. The Judd-Ofelt (J-O) intensity parameters, oscillator strengths, spontaneous transition probabilities, branching ratios, and radiative lifetimes were successfully calculated based on the experimental absorption spectrum and the J-O theory. It was found that the presence of silver NPs nucleated and grown during the heat annealing process improves both of the photoluminescence (PL) intensity and the PL lifetime relative to the ⁴I_13/2 → ⁴I_15/2 transition. Optimum PL enhancement was obtained after 10 h of heat-treatment. Such enhancements are mainly attributed to the strong local electric field induced by SPR of silver NPs and also to energy transfer from the surface of silver NPs to Er³⁺ ions, whereas the quenching is ascribed to the energy transfer from Er³⁺ ions to silver NPs. Using the Mc Cumber method, absorption cross-section, calculated emission cross-section, and gain cross-section for the ⁴I_13/2 → ⁴I_15/2 transition were determined and compared for the doped and co-doped glasses. The present results indicate that the glass heat-treated for 10 h has good prospect as a gain medium applied for 1.53 μm band broad and high-gain erbium-doped fiber amplifiers.

A Comparative Study of Er3+, Er3+-Eu3+, Er3+-Tb3+, and Er3+-Eu3+-Tb3+ Codoped Y2O3 Nanoparticles as Optical Heaters

Directory of Open Access Journals (Sweden)

G. A. Sobral

2015-01-01

Full Text Available Fluorescence intensity ratio (FIR technique, based on the thermal coupling of H11/22 and S3/24 energy levels of erbium ions, was used to study the optical heating behavior of rare earth doped yttrium oxide nanophosphors (Y2O3:Er3+, Y2O3:Er3+-Eu3+, Y2O3:Er3+-Tb3+, and Y2O3:Er3+-Eu3+-Tb3+ synthesized via PVA-assisted sol-gel route. The samples were optically heated by an 800 nm CW diode laser, while the upconverted green emissions were used to measure their temperatures in real time. The experimental results indicate that the studied nanoparticles are promising candidates to applications such as photothermal treatments and hyperthermia.

Laser action on rare earth doped nitride semiconductor thin layers

International Nuclear Information System (INIS)

Oussif, A.; Diaf, M.

2010-01-01

Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

Magnetic and structural study of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Torres, C.E. Rodriguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina)], E-mail: torres@fisica.unlp.edu.ar; Golmar, F. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H. [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

2007-10-31

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO{sub 2} thin films were grown by pulsed laser deposition technique on LaAlO{sub 3} substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO{sub 2}. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO{sub 2}.

Effects of Mn doping on the ferroelectric properties of PZT thin films

International Nuclear Information System (INIS)

Zhang Qi

2004-01-01

The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

High-performance thermal sensitive W-doped VO{sub 2}(B) thin film and its identification by first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Wan, Dongyun; Xiong, Ping; Chen, Lanli [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Shi, Siqi, E-mail: sqshi@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Ishaq, Ahmad [National Center for Physics, Quaid-I-Azam University, Islamabad 44000 (Pakistan); Luo, Hongjie [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Gao, Yanfeng, E-mail: yfgao@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

2017-03-01

Graphical abstract: VO{sub 2}(B) thin films with high TCR and suitable resistance were first achieved by W doping. The mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO{sub 2}(B) favors the strain control with W-doping for achieving a large TCR, which overcomes the contradiction between the high conductivity and large TCR generated by dopants in VO{sub 2}(M). - Highlights: • High performance W-doped VO{sub 2}(B) thin films were first achieved by co-sputtering. • Mechanism for performance improvement was studied by first-principles calculations. • The two-dimensional octahedral structure of VO{sub 2} (B) favors the strain control. • Achieved VO{sub 2} films possess high thermal sensitivity (TCR: −3.9%/K & R{sub 0}: 32.7 kΩ). - Abstract: VO{sub 2}(B) is currently a preferred phase structure for the application as bolometer material, which, however, suffers from low temperature-coefficient-of-resistance (TCR) values and large resistances. Here we present the combined experimental and first-principles calculations study on both doped and undoped VO{sub 2}(B) thin films enabling us to attain high TCR (−3.9%/k) and suitable square-resistance (32.7 kΩ) by controlled W doping employing the widely used magnetron sputtering technique. The TCR value is 50% larger than reported ones at the similar resistance. The underlying microscopic mechanism for the performance improvement was studied and results indicated that the introduction of extra electrons and the variation in the band structure resulting from the incorporation of W{sup 6+} ions in the VO{sub 2}(B) crystal lattice contribute to the enhancement of the electronic conductivity. Moreover, the special two-dimensional octahedral structure of monoclinic (C2/m) B-phase VO{sub 2} favors the strain control with W-doping for achieving a large TCR, which overcomes the analogous predicament between the high conductivity and large TCR

Effect of Mn doping on the structural and optical properties of ZrO2 thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.

2014-01-01

Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap

Enhanced ~2.7 µm emission investigation of Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition in Yb,Er,Pr:SrLaGa{sub 3}O{sub 7} crystal

Energy Technology Data Exchange (ETDEWEB)

Wang, Yan [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Zhang, Baotong [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); College of Materials Science and Engineering, Fujian Normal University, Fuzhou, Fujian 350007 (China); Li, Jianfu; Zhu, Zhaojie; You, Zhenyu [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Tu, Chaoyang, E-mail: tcy@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2017-03-15

The bulk crystal of 5at% Yb{sup 3+}, 20 at% Er{sup 3+} and 0.2 at% Pr{sup 3+} triply doped SrLaGa{sub 3}O{sub 7} (abbr. as Yb,Er,Pr:SLGO) was grown by the Czochralski method. The effects of co-dopant Yb{sup 3+} and Pr{sup 3+} on the spectroscopic properties and the mutual energy transfer mechanism were investigated, via the measurements of its absorption, near-infrared and mid-infrared fluorescence spectra, as well as the fluorescence decay curves of Er{sup 3+}:{sup 4}I{sub 13/2} and {sup 4}I{sub 11/2} levels at room temperature. As compared with 20at% Er{sup 3+} singly doped SrLaGa{sub 3}O{sub 7} crystal, ~2.7 µm emission intensity corresponding to Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition is enhanced greatly in the Yb,Er,Pr:SLGO crystal. Spectral analyses indicate that the sensitization of Yb{sup 3+} to Er{sup 3+} improves the ~2.7 µm emission in Yb,Er,Pr:SLGO crystal, meanwhile, the depopulation of Pr{sup 3+} from Er{sup 3+} decreases the ~1.5 µm emission and inhibits the self-termination effect. The energy transfer efficiencies of Yb{sup 3+}→Er{sup 3+} (ET1), Er{sup 3+}→Pr{sup 3+} (ET2) and Er{sup 3+}→Pr{sup 3+} (ET3) were estimated and discussed. The above results conclude that Yb,Er,Pr:SLGO crystal is a good candidate for LD pumped mid-infrared laser. - Graphical abstract: As compared with Er: SrLaGa{sub 3}O{sub 7} crystal, ~2.7 µm MIR emissions corresponding to Er{sup 3+}:{sup 4}I{sub 11/2}→{sup 4}I{sub 13/2} transition were enhanced in Yb{sup 3+}, Er{sup 3+} and Pr{sup 3+} triply doped SrLaGa{sub 3}O{sub 7} crystal owing to the sensitization of co-dopant Yb{sup 3+} via ET1, at the same time, ~1.5 µm NIR emissions were weakened owing to the depopulation of co-dopant Pr{sup 3+} via ET3.

Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Science.gov (United States)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Fabrication and electrical resistivity of Mo-doped VO2 thin films coated on graphite conductive plates by a sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Choi, W.; Jung, H.M.; Um, S. [Hanyang Univ., Seoul (Korea, Republic of). School of Mechanical Engineering

2008-07-01

Vanadium oxides (VO2) can be used in optical devices, thermochromic smart windows and sensors. This paper reported on a study in which vanadium pentoxide (V2O5) powder was prepared and mixed with Molybdenum Oxides (MoO3) to form Mo-doped and -undoped VO2 thin films by a sol-gel method on graphite conductive substrates. The micro-structure and chemical compositions of the Mo-doped and -undoped VO2 thin films was investigated using X-Ray diffraction and scanning electron microscopy. Changes in electrical resistivity were measured as a function of the stoichiometric compositions between vanadium and molybdenum. In this study. Mo-doped and -undoped VO2 thin films showed the typical metal to insulator transition (MIT), where temperature range could be adjusted by modifying the dopant atomic ratio. The through-plane substrate structure of the Mo-doped layer influences the electrical resistivity of the graphite substrate. As the amount of the molybdenum increases, the electrical resistivity of the graphite conductive substrate decreases in the lower temperature range below the freezing point of water. The experimental results showed that if carefully controlled, thermal dissipation of VO2 thin films can be used as a self-heating source to melt frozen water with the electrical current flowing through the graphite substrate. 3 refs., 3 figs.

Far-infrared spectroscopic study of CeO2 nanocrystals

Science.gov (United States)

Popović, Z. V.; Grujić-Brojčin, M.; Paunović, N.; Radonjić, M. M.; Araújo, V. D.; Bernardi, M. I. B.; de Lima, M. M.; Cantarero, A.

2015-01-01

We present the far-infrared reflectivity spectra of 5 nm-sized pure and copper-doped Ce1- x Cu x O2- y ( x = 0; 0.01 and 0.10) nanocrystals measured at room temperature in the 50-650 cm-1 spectral range. Reflectivity spectra were analyzed using the factorized form of the dielectric function, which includes the phonon and the free carriers contribution. Four oscillators with TO energies of approximately 135, 280, 370, and 490 cm-1 were included in the fitting procedure. These oscillators represent local maxima of the CeO2 phonon density of states, which is also calculated using the density functional theory. The lowest energy oscillator represents TA(L)/TA(X) phonon states, which become infrared-active E u modes at the L and X points of the Brillouin zone (BZ). The second oscillator originates from TO(Γ) phonon states. The oscillator at 400 cm-1 originates from Raman mode phonon states, which at the L point of BZ also becomes infrared-active E u mode. The last oscillator describes phonons with dominantly LO(Γ) infrared mode character. The appearance of phonon density of states related oscillators, instead of single F 2uinfrared-active mode in the far-infrared reflectivity spectra, is a consequence of the nanosized dimension of the CeO2 particles. The best fit spectra are obtained using the generalized Bruggeman model for inhomogeneous media, which takes into account the nanocrystal volume fraction and the pore shape.

Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies

Directory of Open Access Journals (Sweden)

Takashi Tsuchiya, Shogo Miyoshi, Yoshiyuki Yamashita, Hideki Yoshikawa, Kazuya Terabe, Keisuke Kobayashi and Shu Yamaguchi

2013-01-01

Full Text Available In situ hard x-ray photoemission spectroscopy (HX-PES and soft x-ray absorption spectroscopy (SX-XAS have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO2 (GDC thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chemical shift as large as 3.2 eV, corresponding to the redox window where ionic conductivity is predominant. The window width is equal to the energy gap between donor and acceptor levels of the GDC electrolyte. The Ce M-edge SX-XAS spectra also show a considerable increase of Ce3+ satellite peak intensity, corresponding to electrochemical reduction by oxide ion migration. In addition to the reversible redox reaction, two distinct phenomena by the electrochemical transport of oxide ions are observed as an irreversible reduction of the entire oxide film by O2 evolution from the GDC film to the gas phase, as well as a vigorous precipitation of oxygen gas at the bottom electrode to lift off the GDC film. These in situ spectroscopic observations describe well the electrochemical polarization behavior of a metal/GDC/metal capacitor-like two-electrode cell at room temperature.

Effects of calcium doping on the superconducting properties of top-seeded melt growth processed Y1.5Ba2-xCaxCu3Oy superconductors

International Nuclear Information System (INIS)

Park, S.D.; Kim, H.J.; Park, B.J.; Han, Y.H.; Jun, B.-H.; Lee, J.S.; Kim, C.-J.

2011-01-01

We study effects of calcium doping in melt processed Y123 superconductors. We examine a superconducting transition temperature and current density. A transition temperature and current density decreases by calcium doping. Calcium doping leads to coarseing of Y211 particles. Y211 refining effect by CeO 2 is disappreared by calcium doping. The effect of calcium doping on the superconducting properties of top seeded melt growth (TSMG) processed Y 1.5 Ba 2-x Ca x Cu 3 O y superconductors was studied in terms of calcium content (X ca ). YBa 2-x Ca x Cu 3 O 7-δ (X ca = 0, 0.005, 0.01, 0.02, 0.04, 0.1, 0.3) powders were synthesized by the powder calcination method. YBa 2-x Ca x Cu 3 O 7-δ powders were mixed with 0.25 mole Y 2 O 3 powder and 1 wt.% CeO 2 as Y 2 BaCuO 5 (Y211) refiner, and finally made into Y 1 . 5 Ba 2-x Ca x Cu 3 O y (Y1.5) + 1 wt.% CeO 2 composition. The single Y123 growth on the top surface was observed up to X ca = 0.1, while the multiple Y123 growth was observed at X ca ≥ 0.1. The superconducting transition temperature (T c ) and critical current density (J c ) of TSMG processed Y1.5 samples were inversely proportional to X ca . The Y211 size increased with increasing X ca due to the enhancement of Y211 coarsening by calcium doping. No Y211 refining effect by CeO 2 was observed in the calcium doped samples. The T c and J c decrease by calcium doping are likely to be due to the calcium incorporation with the Y123 lattice and formation of coarse Y211 particles.

Photoluminescence optimization of Er-doped SiO{sub 2} films synthesized by radiofrequency magnetron sputtering with energetic treatments during and after deposition

Energy Technology Data Exchange (ETDEWEB)

Cattaruzza, E., E-mail: cattaruz@unive.it; Battaglin, G.; Trave, E.; Visentin, F.

2011-06-01

By radiofrequency magnetron sputtering co-deposition we synthesized Er:SiO{sub 2} film 0.5 {mu}m thick on silica substrates, with Er content < 0.3 atomic %. By changing the preparation condition (during deposition we have used an additional negative bias voltage applied to the substrates for inducing a low-energy ion bombardment, with or without a contemporary heating) and by varying the thermal treatment after the synthesis (the best conditions were 1 h in the range 700-800 deg. C, in air) we have obtained an Er:SiO{sub 2} system with an intense photoluminescence emission at {lambda} = 1.54 {mu}m. The best-performing Er:SiO{sub 2} samples obtained by sputtering have shown a photoluminescence response comparable to that of the typical Er:SiO{sub 2} thin film systems obtained by conventional techniques used in applicative framework.

Mid-infrared emission and Raman spectra analysis of Er(3+)-doped oxyfluorotellurite glasses.

Science.gov (United States)

Chen, Fangze; Xu, Shaoqiong; Wei, Tao; Wang, Fengchao; Cai, Muzhi; Tian, Ying; Xu, Shiqing

2015-04-10

This paper reports on the spectroscopic and structural properties in Er(3+)-doped oxyfluorotellurite glasses. The compositional variation accounts for the evolutions of Raman spectra, Judd-Ofelt parameters, radiative properties, and fluorescent emission. It is found that, when maximum phonon energy changes slightly, phonon density plays a crucial role in quenching the 2.7 μm emission generated by the Er(3+):(4)I11/2→(4)I13/2 transition. The comparative low phonon density contributes strong 2.7 μm emission intensity. The high branching ratio (18.63%) and large emission cross section (0.95×10(-20)  cm(2)) demonstrate that oxyfluorotellurite glass contained with 50 mol.% TeO2 has potential application in the mid-infrared region laser.

Nanocrystalline Cobalt-doped SnO2 Thin Film: A Sensitive Cigarette Smoke Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2011-11-01

Full Text Available This article discusses a sensitive cigarette smoke sensor based on Cobalt doped Tin oxide (Co-SnO2 thin films deposited on glass substrate by a conventional Spray Pyrolysis technique. The Co-SnO2 thin films have been characterized by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM and Energy Dispersive X-ray Spectroscopy (EDAX. The XRD spectrum shows polycrystalline nature of the film with a mixed phase comprising of SnO2 and Co3O4. The SEM image depicts uniform granular morphology covering total substrate surface. The compositional analysis derived using EDAX confirmed presence of Co in addition to Sn and O in the film. Cigarette smoke sensing characteristics of the Co-SnO2 thin film have been studied under atmospheric condition at different temperatures and smoke concentration levels. The sensing parameters such as sensitivity, response time and recovery time are observed to be temperature dependent, exhibiting better results at 330 oC.

Thermal lens study of thermo-optical properties and concentration quenching of Er3+-doped lead pyrophosphate based glasses

Energy Technology Data Exchange (ETDEWEB)

Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil

2012-01-01

In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.

NIR to visible upconversion in Er3+/Yb3+ co-doped CaYAl3O7 phosphor obtained by solution combustion process

International Nuclear Information System (INIS)

Singh, Vijay; Rai, Vineet Kumar; Al-Shamery, Katharina; Nordmann, Joerg; Haase, Markus

2011-01-01

Using the combustion synthesis, CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared at low temperatures (550 o C) in a few minutes. Formation of the compound was confirmed by X-ray powder diffraction. Near-infrared to visible upconversion fluorescence emission in the Er 3+ doped CaYAl 3 O 7 phosphor powder has been observed. The effect of co-doping with triply ionized ytterbium in the CaYAl 3 O 7 :Er 3+ phosphor has been studied and the process involved is discussed. - Highlights: → The green emitting up-conversion CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared by easy combustion method. → The combustion method is a simple, energy saving, fast and economical viable process. → The luminescence intensity in the co-doped phosphor is enhanced by several times compared to that of the singly (Er 3+ ) doped phosphor.

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

2015-07-15

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

Synthesis, characterization and photovoltaic properties of Mn-doped Sb2S3 thin film

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Horoz Sabit

2018-03-01

Full Text Available Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs prepared by chemical bath deposition (CBD at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm becomes larger than that of undoped Sb2S3 TF (69.3 nm. It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.

Effect of CeO2 and Y2O3 on microstructure, bioactivity and degradability of laser cladding CaO-SiO2 coating on titanium alloy.

Science.gov (United States)

Li, H C; Wang, D G; Chen, C Z; Weng, F

2015-03-01

To solve the lack of strength of bulk biomaterials for load-bearing applications and improve the bioactivity of titanium alloy (Ti-6Al-4V), CaO-SiO2 coatings on titanium alloy were fabricated by laser cladding technique. The effect of CeO2 and Y2O3 on microstructure and properties of laser cladding coating was analyzed. The cross-section microstructure of ceramic layer from top to bottom gradually changes from cellular-dendrite structure to compact cellular crystal. The addition of CeO2 or Y2O3 refines the microstructure of the ceramic layer in the upper and middle regions. The refining effect on the grain is related to the kinds of additives and their content. The coating is mainly composed of CaTiO3, CaO, α-Ca2(SiO4), SiO2 and TiO2. Y2O3 inhibits the formation of CaO. After soaking in simulated body fluid (SBF), the calcium phosphate layer is formed on the coating surface, indicating the coating has bioactivity. After soaking in Tris-HCl solution, the samples doped with CeO2 or Y2O3 present a lower weight loss, indicating the addition of CeO2 or Y2O3 improves the degradability of laser cladding sample. Copyright © 2015 Elsevier B.V. All rights reserved.

Intensive up-conversion photoluminescence of Er3+-doped Bi7Ti4NbO21 ferroelectric ceramics and its temperature sensing

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Hua Zou

2014-10-01

Full Text Available The intensive up-conversion (UC photoluminescence and temperature sensing behavior of Er3+-doped Bi7Ti4NbO21(BTN ferroelectric ceramics prepared by a conventional solid-state reaction technique have been investigated. The X-ray diffraction and field emission scanning electron microscope analyses demonstrated that the Er3+-doped BTN ceramics are single phase and uniform flake-like structure. With the Er3+ ions doping, the intensive UC emission was observed without obviously changing the properties of ferroelectric. The optimal emission intensity was obtained when Er doping level was 15 mol.%. The temperature sensing behavior was studied by fluorescence intensity ratio (FIR technique of two green UC emission bands, and the experimental data fitted very well with the function of temperature in a range of 133–573 K. It suggested that the Er3+-doped BTN ferroelectric ceramics are very good candidates for applications such as optical thermometry, electro-optical devices and bio-imaging ceramics.

An investigation on the In doping of ZnO thin films by spray pyrolysis

Science.gov (United States)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

2016-05-31

Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

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K. Usharani

2015-06-01

Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

Photocatalytic activity of Al2O3-doped TiO2 thin films activated with visible light on the bacteria Escherichia coli

International Nuclear Information System (INIS)

Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Bravo-Patino, A.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

2010-01-01

Al 2 O 3 -doped TiO 2 thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. A Corning* glass was used as a substrate, in which a titanium film was deposited by sputtering. Then, a precursor sol was prepared with Ti(n-OBu) 4 and Al(s-OBu) 3 and used as the medium for EPD. Next, the thin films were sintered and, finally, characterised by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Several cultures of Escherichia coli, strain XL1-Blue, were prepared. Nine experiments were carried out. In three of them, an inoculum (a low amount of a product that contains bacteria) was prepared without a film; in the other six Al 2 O 3 -doped TiO 2 film-coated glass substrates were irradiated with visible light before they were introduced in the inoculum. The SEM and EDS results showed that TiO 2 -Al 2 O 3 films were obtained, covering all the glass substrate and with uniform size of particles forming them, and that the aluminium was distributed uniformly on the film. XRD results showed that rutile phase was obtained. By TEM, the structure of TiO 2 was demonstrated. Al 2 O 3 -doped TiO 2 thin films were successful at eliminating E. coli.

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

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Nen-Wen Pu

2015-09-01

Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

International Nuclear Information System (INIS)

Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

2015-01-01

Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

Physical and optical properties of calcium sulfate ultra-phosphate glass-doped Er2O3

Science.gov (United States)

Aliyu, Aliyu Mohammed; Hussin, R.; Deraman, Karim; Ahmad, N. E.; Danmadami, Amina M.; Yamusa, Y. A.

2018-03-01

The influence of erbium on physical and optical properties of calcium sulfate ultra-phosphate glass was investigated using conventional melt quench process. Selected samples of composition 20CaSO4 (80 - x) P2O5- xEr2O3 with 0.1 ≤x ≤ 0.9 mol.% were prepared and assessed. X-ray diffraction (XRD) techniques were used to confirm the amorphous nature of the said samples. The structural units of phosphate-based glass were assessed from Raman spectra as ultra-(Q3), meta-(Q2), pyro-(Q1) and orthophosphate (Q0) units. Depolymerization process of the glasses was testified for higher calcium oxide content and UV-visible for optical measurement. Thermal analysis have been investigated by means of thermogravimetric analysis. The results show the decomposition of materials in the temperature range of 25∘C-1000∘C. Er3+ absorption spectra were measured in the range of 400-1800nm. PL measurement was carried out in order to obtain the excitation and emission spectra of the samples. The emission spectra excited at 779nm comprises of 518nm, 550nm and 649nm of transition 4F9/2, 4S3/2 and 2H11/2 excited states to 4I15/2 ground state. In physical properties, the density calculated using Archimedes method is inversely proportional to molar volume with increase in Er3+ ions. Optical bandgap (Eg) were determined using Tauc’s plots for direct transitions where Eg (direct) decreases with increase in erbium content. The refractive index increases with decreasing molar volume; this may have a tendency for larger optical bandgap. The result obtained from the glass matrix indicates that erbium oxide-doped calcium sulfate ultra-phosphate may give important information for wider development of functional glasses.

The effects of energy transfer on the Er{sup 3+} 1.54 {mu}m luminescence in nanostructured Y{sub 2}O{sub 3} thin films with heterogeneously distributed Yb{sup 3+} and Er{sup 3+} codopants

Energy Technology Data Exchange (ETDEWEB)

Hoang, J.; Chang, J. P. [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States); Schwartz, Robert N.; Wang, Kang L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)

2012-09-15

We report the effects of heterogeneous Yb{sup 3+} and Er{sup 3+} codoping in Y{sub 2}O{sub 3} thin films on the 1535 nm luminescence. Yb{sup 3+}:Er{sup 3+}:Y{sub 2}O{sub 3} thin films were deposited using sequential radical enhanced atomic layer deposition. The Yb{sup 3+} energy transfer was investigated for indirect and direct excitation of the Yb {sup 2}F{sub 7/2} state using 488 nm and 976 nm sources, respectively, and the trends were described in terms of Forster and Dexter's resonant energy transfer theory and a macroscopic rate equation formalism. The addition of 11 at. % Yb resulted in an increase in the effective Er{sup 3+} photoluminescence (PL) yield at 1535 nm by a factor of 14 and 42 under 488 nm and 976 nm excitations, respectively. As the Er{sub 2}O{sub 3} local thickness was increased to greater than 1.1 A, PL quenching occurred due to strong local Er{sup 3+}{r_reversible} Er{sup 3+} excitation migration leading to impurity quenching centers. In contrast, an increase in the local Yb{sub 2}O{sub 3} thickness generally resulted in an increase in the effective Er{sup 3+} PL yield, except when the Er{sub 2}O{sub 3} and Yb{sub 2}O{sub 3} layers were separated by more than 2.3 A or were adjacent, where weak Yb{sup 3+}{r_reversible} Er{sup 3+} coupling or strong Yb{sup 3+}{r_reversible} Yb{sup 3+} interlayer migration occurred, respectively. Finally, it is suggested that enhanced luminescence at steady state was observed under 488 nm excitation as a result of Er{sup 3+}{yields} Yb{sup 3+} energy back transfer coupled with strong Yb{sup 3+}{r_reversible} Yb{sup 3+} energy migration.

Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

Energy Technology Data Exchange (ETDEWEB)

Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

2016-05-05

This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

Optical characterization of Er-implanted ZnO films formed by sol-gel method

International Nuclear Information System (INIS)

Fukudome, T.; Kaminaka, A.; Isshiki, H.; Saito, R.; Yugo, S.; Kimura, T.

2003-01-01

In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5 x 10 21 cm -3 . The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature

Energy transfer characteristics of silicate glass doped with Er{sup 3+}, Tm{sup 3+}, and Ho{sup 3+} for ∼2 μm emission

Energy Technology Data Exchange (ETDEWEB)

Li, Ming; Liu, Xueqiang [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Guo, Yanyan [College of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Hu, Lili [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Zhang, Junjie [College of Materials Science and Engineering, China Jiliang University, Hangzhou 310 018 (China)

2013-12-28

A Er{sup 3+}/Tm{sup 3+}/Ho{sup 3+} tri-doped silicate glass with good thermal stability is prepared by melt-quenching method. Efficient ∼2 μm emission is observed under 808 nm laser excitation. It is found that the 2.0 μm emission of Ho{sup 3+} can be enhanced under the excitation at 808 nm by incorporating Er{sup 3+} and Tm{sup 3+}. Based on the measurement of absorption spectra, the Judd–Ofelt intensity parameters, radiation emission probability, and branching ratio are calculated to evaluate the spectroscopic properties simultaneously. The maximum value of emission cross section of Ho{sup 3+} is 3.54 × 10{sup −21} cm{sup 2} at 2008 nm. Additionally, the phonon assistance and the micro-parameters in the energy transfer process are quantitatively analyzed by using Dexter model. The energy transfer coefficient from Tm{sup 3+} to Ho{sup 3+} can reach as high as 21.44 × 10{sup −40} cm{sup 6}/s, respectively. The emission property together with good thermal property indicates that Er{sup 3+}/Tm{sup 3+}/Ho{sup 3+} tri-doped silicate glass is a potential kind of laser glass for efficient 2 μm laser.

Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

International Nuclear Information System (INIS)

Mehta, B.R.

2009-01-01

Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

International Nuclear Information System (INIS)

Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

1999-01-01

It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)