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Sample records for er doped gan

  1. Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

    International Nuclear Information System (INIS)

    Chen Shaoqiang; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro; Dierre, Benjamin; Lee, Woong; Sekiguchi, Takashi

    2010-01-01

    Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.

  2. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

    National Research Council Canada - National Science Library

    Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

    2002-01-01

    The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

  3. Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

    International Nuclear Information System (INIS)

    Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

    2001-01-01

    Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

  4. Optimum Er concentration for in situ doped GaN visible and infrared luminescence

    International Nuclear Information System (INIS)

    Lee, D. S.; Heikenfeld, J.; Steckl, A. J.; Hommerich, U.; Seo, J. T.; Braud, A.; Zavada, J.

    2001-01-01

    GaN thin films have been doped with varying Er concentrations (0.01--10 at.%) during molecular-beam-epitaxy growth. As expected, the visible and infrared (IR) emissions, from photoluminescence (PL) and electroluminescence (EL), are a strong function of Er concentration. We report on the determination of an optimum Er doping level for PL and EL intensity. Secondary ion mass spectroscopy and Rutherford backscattering measurements showed that the Er concentration in GaN increased exponentially with Er cell temperature. PL and EL intensity of green emission at 537 and 558 nm, due to Er 4f--4f inner shell transitions, exhibited a maximum at ∼1 at.% Er. IR PL intensity at 1.54 μm, due to another Er transition, revealed the same maximum for ∼1 at.% Er concentration. PL lifetime measurements at 537 nm showed that samples with Er concentration <1 at.% had a lifetime of ∼5 μs. For Er concentration ≥1 at.%, the lifetime decreased rapidly to values below 1 μs. This concentration quenching is believed to be due to a combination of Er cross relaxation and energy transfer to GaN defects, eventually followed by precipitation. This conclusion is supported by x-ray diffraction measurements. As a result, we have determined that the optimum Er doping concentration into GaN is ∼1 at.%. Copyright 2001 American Institute of Physics

  5. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions

  6. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru

  7. Site-selective spectroscopy of Er in GaN

    International Nuclear Information System (INIS)

    Dierolf, V.; Sandmann, C.; Zavada, J.; Chow, P.; Hertog, B.

    2004-01-01

    We investigated different Er 3+ defect sites found in Er-doped GaN layers by site-selective combined excitation-emission spectroscopy and studied the role of these sites in different direct and multistep excitation schemes. The layers were grown by molecular beam epitaxy and were 200 nm thick. Two majority sites were found along with several minority sites. The sites strongly differ in excitation and energy transfer efficiencies as well as branching ratios during relaxation. For this reason, relative emission intensities from these sites depend strongly on emission and excitation. The sites were identified for several transitions and a comprehensive list of energy levels has been compiled. One of the minority sites appears strongly under ultraviolet excitation above the GaN band gap suggesting that this site is an excellent trap for excitation energy of electron-hole pairs

  8. Implantation doping of GaN

    International Nuclear Information System (INIS)

    Zolper, J.C.

    1996-01-01

    Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

  9. Optical excitation of Er centers in GaN epilayers grown by MOCVD

    Science.gov (United States)

    George, D. K.; Hawkins, M. D.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.; Vinh, N. Q.

    2016-02-01

    In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the 4I13/2 → 4I15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE spectra reveal an existence of two types of Er optical centers from isolated and the defect-related Er centers in GaN epilayers. These centers have different PL spectra, local defect environments, decay dynamics, and excitation cross-sections. The isolated Er optical center, which can be excited by either excitation mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be observed through band-to-band excitation but has the largest crosssection. Our results indicate pathways for efficient optical excitation of Er-doped GaN semiconductors.

  10. Excitation mechanisms of Er optical centers in GaN epilayers

    International Nuclear Information System (INIS)

    George, D. K.; Hawkins, M. D.; McLaren, M.; Vinh, N. Q.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.

    2015-01-01

    We report direct evidence of two mechanisms responsible for the excitation of optically active Er 3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 μm from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much higher excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 μm from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature

  11. The influence of Fe doping on the surface topography of GaN epitaxial material

    International Nuclear Information System (INIS)

    Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

    2015-01-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

  12. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    International Nuclear Information System (INIS)

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  13. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  14. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    International Nuclear Information System (INIS)

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-01-01

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  15. Dislocation core structures in Si-doped GaN

    International Nuclear Information System (INIS)

    Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-01-01

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8  and (10 ± 1) × 10 9  cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN

  16. Dislocation core structures in Si-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  17. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

    International Nuclear Information System (INIS)

    Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

    2014-01-01

    Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

  18. Electronic structure and optical properties of Al and Mg co-doped GaN

    International Nuclear Information System (INIS)

    Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

    2013-01-01

    The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

  19. Investigation of GaN LED with Be-implanted Mg-doped GaN layer

    International Nuclear Information System (INIS)

    Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

    2004-01-01

    We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

  20. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  1. Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

    International Nuclear Information System (INIS)

    Zhang, Yong; Li, Feng

    2017-01-01

    The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

  2. Optical properties of Mg doped p-type GaN nanowires

    Science.gov (United States)

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

    2015-06-01

    Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

  3. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  4. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    International Nuclear Information System (INIS)

    Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

    2012-01-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  5. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    International Nuclear Information System (INIS)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  6. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  7. Understanding the Room Temperature Ferromagnetism in GaN Nanowires with Pd Doping

    International Nuclear Information System (INIS)

    Manna, S; De, S K

    2011-01-01

    We report the first synthesis and characterization of 4d transition metal palladium-doped GaN nanowires (NWs). Room temperature ferromagnetism has been observed in high quality Vapor Liquid Solid (VLS) epitaxy grown undoped n-type GaN nanowires. It was proposed that this type of magnetism is due to defects which are not observed in Bulk GaN because of large formation energy of defects in bulk GaN. Here we have successfully doped 4d transition metal Pd in GaN NWs. We find fairly strong and long-range ferromagnetic coupling between Pd substituted for Ga in GaN . The results suggest that 4d metals such as Pd may also be considered as candidates for ferromagnetic dopants in semiconductors.

  8. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  9. Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

    National Research Council Canada - National Science Library

    Steckl, Andrew

    2006-01-01

    Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

  10. Effects of hydrogen on Mn-doped GaN: A first principles calculation

    International Nuclear Information System (INIS)

    Wu, M.S.; Xu, B.; Liu, G.; Lei, X.L.; Ouyang, C.Y.

    2013-01-01

    First-principles calculations based on spin density functional theory are performed to study the effects of H on the structural, electronic and magnetic properties of the Mn-doped GaN dilute magnetic semiconductors. Our results show that the interstitial H atom prefers to bond with N atom rather than Mn atom, which means that H favors to form the N–H complex rather than Mn–H complex in the Mn-doped GaN. After introducing one H atom in the system, the total magnetic moment of the Mn-doped GaN increases by 25%, from 4.0μ B to 5.0μ B . The physics mechanism of the increase of magnetic moment after hydrogenation in Mn-doped GaN is discussed

  11. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  12. Effect of light Si doping on the properties of GaN

    International Nuclear Information System (INIS)

    Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-01-01

    An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

  13. Zn doped GaN for single-photon emission

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Arne; Ledig, Johannes; Al-Suleiman, Mohamed Aid Mansur; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Peters, Silke; Racu, Ana Maria; Schmunk, Waldemar; Hofer, Helmut; Kueck, Stefan [Physikalisch Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

    2012-03-15

    In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single-photon emission, thus the density of the Zn-Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single-photon sources these Zn-Si pairs have to be incorporated into LEDs, therefore we fabricated GaN-based nano-LEDs which show electroluminescence at 430 nm (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Secondary ion mass spectrometry analysis of In-doped p-type GaN films

    International Nuclear Information System (INIS)

    Chiou, C.Y.; Wang, C.C.; Ling, Y.C.; Chiang, C.I.

    2003-01-01

    SIMS was used to investigate the isoelectronic In-doped p-type GaN films. The growth rate of the p-type GaN film decreased with increasing Mg and In doping. The Mg saturation in GaN was 3.55x10 19 atoms/cm 3 . The role of In as surfactant was evaluated by varying In concentrations and it was observed that the surface appeared smooth with increasing In incorporation. The Mg solubility in p-type GaN improved to 0.0025% molar ratio of the GaN with In incorporation. The In concentration results observed in neutron activation analysis (NAA) were found to be higher by a factor of 2.88 than that observed in SIMS and can be attributed to the difference in sensitivity of the two techniques. Good linearity in the results was observed from both techniques

  15. Modification of GaN(0001) growth kinetics by Mg doping

    International Nuclear Information System (INIS)

    Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

    2004-01-01

    We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

  16. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Science.gov (United States)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  17. Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

    International Nuclear Information System (INIS)

    Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

    2013-01-01

    Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

  18. Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

    International Nuclear Information System (INIS)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

    2013-01-01

    Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

  19. 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

    International Nuclear Information System (INIS)

    Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

    2008-01-01

    The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

  20. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    International Nuclear Information System (INIS)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-01-01

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

  1. A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

    2016-10-01

    Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

  2. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  4. Synthesis of Er and Er : Yb doped sol–gel derived silica glass and ...

    Indian Academy of Sciences (India)

    Unknown

    Materials Science Centre, †Central Research Facility, Optical Fibre Unit, Indian Institute of Technology,. Kharagpur 721 302, India. MS received 1 March 2004; revised 4 July 2004. Abstract. Er3+ and Er3+ : Yb3+ doped optical quality, crack and bubble free glasses for possible use in mak- ing laser material have been ...

  5. Covalent bonding and J-J mixing effects on the EPR parameters of Er3+ions in GaN crystal

    Institute of Scientific and Technical Information of China (English)

    柴瑞鹏; 李隆; 梁良; 庞庆

    2016-01-01

    The EPR parameters of trivalent Er3+ ions doped in hexagonal GaN crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doubletΓ6. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er3+ion and the replaced Ga3+ion apart from the intrinsic covalency of host GaN. Furthermore, the J–J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J–J mixing contribution is from the manifold 2K15/2, which accounts for about 2.5%. The next important J–J contribution arises from the crystal–field mixture between the ground state 4I15/2 and the first excited state 4I13/2, and is usually less than 0.2%. The contributions from the rest states may be ignored.

  6. Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals.

    Science.gov (United States)

    Buckeridge, J; Catlow, C R A; Scanlon, D O; Keal, T W; Sherwood, P; Miskufova, M; Walsh, A; Woodley, S M; Sokol, A A

    2015-01-09

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  7. Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

    International Nuclear Information System (INIS)

    Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

    2015-01-01

    We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

  8. Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

    Science.gov (United States)

    Buckeridge, J.; Catlow, C. R. A.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Miskufova, M.; Walsh, A.; Woodley, S. M.; Sokol, A. A.

    2015-01-01

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p -type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  9. Structural and optical properties of Si-doped GaN

    OpenAIRE

    Cremades Rodríguez, Ana Isabel; Gorgens, L.; Ambacher, O.; Stutzmann, M.; Scholz, F.

    2000-01-01

    Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress...

  10. Doping process of p-type GaN nanowires: A first principle study

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

    2017-10-01

    The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

  11. Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots

    International Nuclear Information System (INIS)

    Bodiou, L.; Braud, A.; Doualan, J.-L.; Moncorge, R.; Park, J. H.; Munasinghe, C.; Steckl, A. J.; Lorenz, K.; Alves, E.; Daudin, B.

    2009-01-01

    A comparison is presented between Eu implanted and Eu in situ doped GaN thin films showing that two predominant Eu sites are optically active around 620 nm in both types of samples with below and above bandgap excitation. One of these sites, identified as a Ga substitutional site, is common to both types of Eu doped GaN samples despite the difference in the GaN film growth method and in the doping technique. High-resolution photoluminescence (PL) spectra under resonant excitation reveal that in all samples these two host-sensitized sites are in small amount compared to the majority of Eu ions which occupy isolated Ga substitutional sites and thus cannot be excited through the GaN host. The relative concentrations of the two predominant host-sensitized Eu sites are strongly affected by the annealing temperature for Eu implanted samples and by the group III element time opening in the molecular beam epitaxy growth. Red luminescence decay characteristics for the two Eu sites reveal different excitation paths. PL dynamics under above bandgap excitation indicate that Eu ions occupying a Ga substitutional site are either excited directly into the 5 D 0 level or into higher excited levels such as 5 D 1 , while Eu ions sitting in the other site are only directly excited into the 5 D 0 level. These differences are discussed in terms of the spectral overlap between the emission band of a nearby bound exciton and the absorption bands of Eu ions. The study of Eu doped GaN quantum dots reveals the existence of only one type of Eu site under above bandgap excitation, with Eu PL dynamics features similar to Eu ions in Ga substitutional sites

  12. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

    Science.gov (United States)

    Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

    2018-05-01

    Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

  13. Influence of Si-doping on heteroepitaxially grown a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Bastek, Barbara; Noltemeyer, Martin; Hempel, Thomas; Rohrbeck, Antje; Witte, Hartmut; Veit, Peter; Blaesing, Juergen; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-Universitaet Magdeburg, FNW/IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

    2011-07-01

    Si-doped a-plane GaN samples with nominal doping levels up to 10{sup 20} cm{sup -3} were grown on r-plane sapphire by metal organic vapor phase epitaxy. Silane flow rates higher than 59 nmol/min lead to three dimensional grown crystallites as revealed by scanning electron microscopy. High resolution X-ray diffraction, photoluminescence and cathodoluminescence suggest considerably reduced defect densities in the large micrometer-sized GaN crystallites. Especially, transmission electron microscopy images verify a very low density of basal plane stacking faults less than 10{sup 4} cm{sup -1} in these crystallites consisting of heteroepitaxially grown a-plane GaN. In our presentation the influence of the Si doping on the basal plane stacking faults will be discussed.

  14. Beryllium doped p-type GaN grown by metal-organic chemical vapor depostion

    International Nuclear Information System (INIS)

    Al-Tahtamouni, T.M.; Sedhain, A.; Lin, J.Y.; Jiang, H.X.

    2010-01-01

    The authors report on the growth of Be-doped p-type GaN epilayers by metal-organic chmical vapor deposition (MOCVD). The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy. The PL spectra of Be-doped GaN epilayers ethibited two emission lines at 3.36 and 2.71 eV, which were obsent in undoped epilayers. The transition at 3.36 eV was at 3.36 and 2.71eV, which were absent in undoped epilayers. The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor Be d eg.. The transition at 2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be d eg. acceptors. Three independent measurements: (a) resistivity vs. temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band. This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN. It is thus concluded that Be could be an excellent acceptor dopant in nitride materials. (authors).

  15. The study of electronic structures and optical properties of Al-doped GaN

    International Nuclear Information System (INIS)

    Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin; Li Lisha

    2011-01-01

    The electronic structures and optical properties of undoped and Al-doped GaN (Al x Ga 1-x N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al x Ga 1-x N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

  16. Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN

    CERN Document Server

    Wahl, U; Decoster, S; Vantomme, A; Correi, J G

    2009-01-01

    A GaN thin film was implanted with 5 × 1014 cm−2 of 60 keV stable 166Er, followed by the implantation of 2 × 1013 cm−2 radioactive 167Tm (t1/2 = 9.3 d) and an annealing sequence up to 900 °C. The emission channeling (EC) technique was applied to assess the lattice location of Er following the Tm decay from the conversion electrons emitted by 167mEr, which showed that more than 50% of 167mEr occupies substitutional Ga sites. The results are briefly compared to a 167mEr lattice location experiment in a GaN sample not pre-implanted with 166Er. In addition, high-resolution X-ray diffraction (HRXRD) was used to characterize the perpendicular strain in the high-fluence implanted film. The HRXRD experiments showed that the Er implantation resulted in an increase of the c-axis lattice constant of the GaN film around 0.5–0.7%. The presence of significant disorder within the implanted region was corroborated by the fact that the EC patterns for off-normal directions exhibit a pronounced angular broadening of t...

  17. P-type doping of GaN

    International Nuclear Information System (INIS)

    Wong, R.K.

    2000-01-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

  18. P-type doping of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

    2000-04-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  19. Partially filled intermediate band of Cr-doped GaN films

    International Nuclear Information System (INIS)

    Sonoda, S.

    2012-01-01

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  20. Planar waveguide laser in Er/Al-doped germanosilicate

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas; Hübner, Jörg; Kristensen, Martin

    1999-01-01

    A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations.......A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations....

  1. Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

    Science.gov (United States)

    Sharma, Venus; Srivastava, Sunita

    2018-04-01

    Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

  2. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

    Science.gov (United States)

    Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

    2017-12-01

    Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

  3. P- and N-type implantation doping of GaN with Ca and O

    International Nuclear Information System (INIS)

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

    1996-01-01

    III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

  4. Mn doped GaN thin films and nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

    2012-01-01

    Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  5. Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

    KAUST Repository

    Ohkawa, Kazuhiro

    2017-10-24

    GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.

  6. Synthesis and characterization of silicon-doped polycrystalline GaN ...

    Indian Academy of Sciences (India)

    Silicon-doped polycrystalline GaN films were successfully deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 Pa. The films were characterized by optical as well as microstructural measurements. The optical ...

  7. Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst

    International Nuclear Information System (INIS)

    Kang, Jin-Ho; Kim, Soo Hee; Ebaid, Mohamed; Lee, June Key; Ryu, Sang-Wan

    2014-01-01

    Efficient photoelectrochemical (PEC) water splitting was demonstrated by a doping-controlled GaN photoanode coated with NiO cocatalyst. Highly doped n-GaN was sandwiched between undoped GaN layers to effectively collect electrons through ohmic contact. With zero external bias, the photocurrent density of the optimized doping profile was ∼3.5 times higher than that of the undoped GaN reference. However, the increased doping concentration degraded the photoanode stability, which was attributed to crystalline defects generated in the highly doped n-GaN. NiO cocatalyst improved the long-term stability of the photoanode because of GaN/NiO band alignment, enhancing hole transport into NiO and suppressing PEC corrosion mediated by hole crowding in GaN. This work established a design strategy for increasing the photocurrent as well as improving stability during water splitting with a GaN-based photoanode

  8. Fabrication and Characterization of Mg-Doped GaN Nanowires

    International Nuclear Information System (INIS)

    Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

    2008-01-01

    Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

  9. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  10. Doping of GaN by ion implantation: Does It Work?

    International Nuclear Information System (INIS)

    Suvkhanov, A.; Wu, W.; Price, K.; Parikh, N.; Irene, E.; Hunn, J.; Thomson, D.; Davis, R.F.; Krasnobaev, L.

    1998-04-01

    Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si + (for n-type) and 80 keV Mg + (for p-type) with various fluences from 1 x 10 12 to 7 x 10 15 ions/cm 2 at liquid nitrogen temperature (LT), room temperature (RT), and 700 C (HT). High temperature (1,200 C and 1,500 C) annealing was carried out after capping the GaN with epitaxial AlN by MOCVD to study damage recovery. Samples were capped by a layer of AlN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 C decrease the lattice disorder; hot implants above 550 C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg + (5 x 10 14 cm 2 ) implanted and annealed GaN showed two peaks: one ∼ 100 meV and another ∼ 140 meV away from the band edge

  11. Implantation induced electrical isolation of sulphur doped GaN xAs1-x layers

    International Nuclear Information System (INIS)

    Ahmed, S.; Lin, J.; Haq, A.; Sealy, B.

    2005-01-01

    The study of III-N-V semiconductor alloys, especially GaN x As 1-x has been increasing in the last few years. The strong dependence of the band gap on the nitrogen content has made this material important for a variety of applications, including long wavelength optoelectronic devices and high efficiency solar cells. We report on the effects of sulphur doping implants on the achieved electrical isolation in GaN x As 1-x layers using proton bombardment. Sulphur ions were implanted in MOCVD-grown GaN x As 1-x layers (1.4 μm thick with nominal x = 1%) with multiple energies creating approximately uniform doping profiles in the range of about 1 x 10 18 -5 x 10 19 cm -3 . Several proton implants were performed in order to find the threshold dose (minimum dose to achieve maximum sheet resistivity) for the electrical isolation of n-type GaN x As 1-x layers. Results show that the sheet resistance of n-type layers can be increased by about five orders of magnitude by proton implantation and the threshold dose to convert a conductive layer to a highly resistive one depends on the original free carrier concentration. The study of annealing temperature dependence of sheet resistivity in proton-isolated GaN x As 1-x layers shows that the electrical isolation can be preserved up to 450 and 500 deg. C when the implantation is performed at RT and 77 K with threshold dose, respectively. These results for n-type GaN x As 1-x layers are novel and have ramifications for device engineers

  12. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    International Nuclear Information System (INIS)

    Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-01-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

  13. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-05-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

  14. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

    KAUST Repository

    Young, N.G.; Farrell, R.M.; Iza, M.; Nakamura, S.; DenBaars, S.P.; Weisbuch, C.; Speck, J.S.

    2016-01-01

    We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

  15. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

    KAUST Repository

    Young, N.G.

    2016-10-01

    We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

  16. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-01-01

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  17. Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping

    International Nuclear Information System (INIS)

    Yang, Mao; Shi, Jun-jie; Zhang, Min; Zhang, Shuai; Bao, Zhi-qiang; Luo, Shao-jun; Zhou, Tie-Cheng; Zhu, Tian-cong; Li, Xiang; Li, Jia

    2013-01-01

    Both the electronic structures and the optical properties of single-walled zigzag GaN nanotubes (NTs) with Mg Ga –O N co-doping are investigated using first-principles calculations. We find that the Mg Ga –O N defect complex can exist stably in GaN NTs. The direct band gap width of the GaN NTs can be reduced by means of the Mg Ga –O N co-doping. The electrons of the valence band maximum (VBM) state are localized around the N atoms bonded with the Mg atom. The imaginary part ε 2 of the complex dielectric function of GaN NTs with Mg Ga –O N co-doping has a sharp peak closely related to the optical transitions between the VBM and conduction band minimum states. - Highlights: ► The Mg Ga –O N defect complex can exist stably in GaN NTs. ► The band gap of the GaN NTs can be reduced due to the Mg Ga –O N co-doping. ► The VBM states are localized around the N atoms bonded with the Mg atom. ► The ε 2 -plot has a peak related to the optical transition from the VBM to CBM state

  18. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    International Nuclear Information System (INIS)

    Zhao, Qian; Xiong, Zhihua; Luo, Lan; Sun, Zhenhui; Qin, Zhenzhen; Chen, Lanli; Wu, Ning

    2017-01-01

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  19. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

    2017-02-28

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  20. Circularly photostimulated electrogyration in europium- and terbium-doped GaN nanocrystals embedded in a silica xerogel matrix

    International Nuclear Information System (INIS)

    Kityk, I V; Nyk, M; Strek, W; Jablonski, J M; Misiewicz, J

    2005-01-01

    Circularly polarized optical poling was proposed and discovered for GaN nanocrystallites embedded in a silica xerogel matrix. The method consists of the creation of screw-like polarization of the medium during the interaction of two circularly polarized coherent bicolour beams. It was shown that doping of the GaN nanocrystallites by Tb 3+ and Eu 3+ ions leads to substantial enhancement of the electrogyration. The effect observed is a consequence of the superposition of nanoconfined effects and the contribution of the localized rare-earth 4f levels. The role of the anharmonic electron-phonon interaction is discussed. The photoluminescence and cathodoluminescence spectra of the GaN composites were investigated. It was demonstrated that the Eu-doped nanocrystallites give a substantially higher effect of the electrogyration compared to the Tb-doped and non-doped ones

  1. P-type doping of semipolar GaN(11 anti 22) by plasma-assisted molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Das, A.; Lahourcade, L. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Pernot, J. [Institut Neel, CNRS et Universite Joseph Fourier, Grenoble (France); Valdueza-Felip, S. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Dept. Electronica, Escuela Politecnica, Universidad de Alcala, Alcala de Henares, Madrid (Spain); Ruterana, P. [CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, Caen (France); Laufer, A.; Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen (Germany); Monroy, E.

    2010-07-15

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(11-22) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11-22). As a result, the growth widow is reduced for Mg doped layers, and we observe a certain deterioration of the surface morphology. In spite of this difficulties, homogenous Mg incorporation is achieved and layers display p -type conductivity for Mg atomic concentration higher than 7 x 10{sup 18} cm{sup -3}. Microscopy studies show no evidence of the pyramidal defects or polarity inversion domains found in Mg-doped GaN(0001). (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Spectroscopic XPEEM of highly conductive SI-doped GaN wires

    Energy Technology Data Exchange (ETDEWEB)

    Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)

    2015-12-15

    Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.

  3. The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

    Science.gov (United States)

    Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

    2018-04-01

    We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

  4. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

    2008-01-01

    Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

  5. Lattice location of Mg in GaN: a fresh look at doping limitations

    CERN Document Server

    AUTHOR|(CDS)2069243; Augustyns, Valerie; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; De Lemos Lima, Tiago Abel; Lippertz, Gertjan; Martins Correia, Joao; Castro Ribeiro Da Silva, Manuel; Kappers, Menno; Temst, Kristiaan; Vantomme, André; Da Costa Pereira, Lino Miguel

    2017-01-01

    Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p-type with 2E19 cm−3 stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350°C converts interstitial 27Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

  6. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

    International Nuclear Information System (INIS)

    Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

    1989-01-01

    Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

  7. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

    International Nuclear Information System (INIS)

    Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, M.; Mikulics, M.; Sofer, Z.

    2015-01-01

    We present a novel route for the synthesis of manganese doped GaN nanoparticles. Nanoparticles in the form of hexagonal discs were synthesized by rapid thermal treatment of manganese doped ammonium hexafluorogallate in ammonium atmosphere. The morphology of GaN:Mn nanoparticles was investigated using scanning electron microscopy. A concentration over 0.7 wt.% of Mn was observed by X-ray fluorescence and electron microprobe. Structural and electronic properties were investigated using X-ray diffraction, Raman spectroscopy and micro-photoluminescence with excitation wavelength of 325 nm and 532 nm. The magnetic properties between 4.5 K and 300 K were investigated by a superconducting quantum interference device (SQUID) magnetometer. GaN:Mn nanoparticles show a purely paramagnetic behavior which can be interpreted in terms of Mn 2+ ions exhibiting an antiferromagnetic interaction. - Highlights: • A new method for the synthesis of Mn doped GaN nanoparticles. • GaN:Mn nanoparticles form hexagonal discs. • None ferromagnetic ordering observed in GaN:Mn nanoparticles. • The concentration of Mn in GaN:Mn nanoparticles reach up to 0.8 wt.%

  8. Excimer-laser-induced activation of Mg-doped GaN layers

    International Nuclear Information System (INIS)

    Lin, Y.-J.; Liu, W.-F.; Lee, C.-T.

    2004-01-01

    In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies (i.e., V Ga H 2 ) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration

  9. Optical properties, luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

    International Nuclear Information System (INIS)

    Jadwisienczak, W.; Wisniewski, K.; Spencer, M.; Thomas, T.; Ingram, D.

    2010-01-01

    We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ∼0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu 3+ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu 3+ ion transition ( 5 D 0 → 7 F 2 ) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu 3+ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu 3+ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu 3+ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr-GaN:Eu 3+ composite. Fairly good radiation damage resistance was obtained for 1.7 x 10 12 to 5 x 10 13 cm -2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.

  10. Enhanced magnetodielectric and multiferroic properties of Er-doped bismuth ferrite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, A.; Banerjee, M. [Department of Physics, National Institute of Technology, Durgapur 713209 (India); Basu, S., E-mail: soumen.basu@phy.nitdgp.ac.in [Department of Physics, National Institute of Technology, Durgapur 713209 (India); Mukadam, M.D.; Yusuf, S.M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Pal, M. [CSIR-Central Glass & Ceramic Research Institute, Kolkata 700032 (India)

    2015-07-15

    An enhancement in multiferroic properties has been achieved for chemically prepared BFO nanoparticles by doping with erbium (Er). XRD along with electron microscopy study reveals the phase purity and nanocrystalline nature of BFO. Enhancement of both the magnetic moment and resistivity is observed by virtue of Er doping. The observed enhanced magnetic moment is considered to be associated with smaller crystallite whereas increase of resistivity may be attributed to a decrease of oxygen vacancies. Doping also display an improvement of leakage behaviour and dielectric constant in nanocrystalline BFO, reflected in well-developed P-E loop. In addition, large enhancement in magnetodielectric coefficient is observed because of Er doping. Therefore, the results provide interesting approaches to improve the multiferroic properties of BFO, which has great implication towards its applications. - Highlights: • Synthesis of pure Er-doped BFO nanoparticles by chemical route. • Large increase in magnetic moment and resistivity due to Er doping. • Er doping produce well developed P-E loop and enhance polarization. • Drastic increase in dielectric constant as well as magnetodielectric coefficient observes because of Er doping.

  11. Wideband multi-element Er-doped fiber amplifier

    International Nuclear Information System (INIS)

    Thipparapu, N K; Jain, S; May-Smith, T C; Sahu, J K

    2014-01-01

    A multi-element Er-doped fiber amplifier (MEEDFA) is demonstrated in which the gain profile is extended into the S and L bands. Each fiber element of the MEEDFA is found to provide a maximum gain of 37 dB and a noise figure of < 4 dB in the C-band. The gain profile of the amplifier is shifted towards longer wavelength by cascading fiber elements. The novel geometry of the multi-element fiber (MEF) could allow for the development of a broadband amplifier in a split-band configuration. The proposed amplifier can operate in the wavelength band of 1520 to 1595 nm (75 nm), with a minimum gain of 20 dB. (letter)

  12. Optical investigation of strain in Si-doped GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

    2001-06-25

    The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E{sub 2} mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5{times}10{sup 18}cm{sup {minus}3} both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. {copyright} 2001 American Institute of Physics.

  13. Optical investigation of strain in Si-doped GaN films

    International Nuclear Information System (INIS)

    Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

    2001-01-01

    The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E 2 mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5x10 18 cm -3 both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. [copyright] 2001 American Institute of Physics

  14. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    International Nuclear Information System (INIS)

    Flynn, Chris; Lee, William

    2014-01-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

  15. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Song, Keun Man

    2014-01-01

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2 Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers

  16. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Department of Optometry, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Song, Keun Man, E-mail: skmmec@gmail.com [Korea Advanced Nano Fab Center, Suwon, Gyeonggi 443-770 (Korea, Republic of)

    2014-01-15

    The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp{sub 2}Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor–acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples. -- Highlights: • The temperature-dependent optical characteristics of blue luminescence (BL) in Mg-doped nonpolar a-plane GaN were investigated using photoluminescence (PL) measurements. • At the highest [Mg]/[Ga] molar ratio, the BL was observed to have two distinct peaks at low temperatures. • The BL was associated with the one shallow Mg acceptor level and the two different Mg-related deep donor levels. • Strong potential fluctuations caused by high compensation level might localize the carriers.

  17. Resonant Raman and FTIR spectra of carbon doped GaN

    Science.gov (United States)

    Ito, S.; Kobayashi, H.; Araki, K.; Suzuki, K.; Sawaki, N.; Yamashita, K.; Honda, Y.; Amano, H.

    2015-03-01

    Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm line of a He-Cd laser, multiple LO phonon scattering signals up to 7th order were observed, and the A1(LO) phonon energy was determined to be 737.5 cm-1 (91.45 meV). In infrared reflectance spectra, on the other hand, a local vibration mode was found at 777.5 cm-1, which is attributed to a Ga-C bond in the GaN matrix suggesting that the C sits on an N site (CN). In spite of the strong suggestion of CN, the samples did not show p-type conduction. Possible origin of the carrier compensation is discussed in relation to the enhancement of defect related yellow luminescence in the photoluminescence spectra.

  18. Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

    International Nuclear Information System (INIS)

    Scheidecker, R.W.

    1979-01-01

    Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

  19. A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Korkmaz, Şadan

    2018-01-01

    We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

  20. Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

    International Nuclear Information System (INIS)

    Khromov, S.; Hemmingsson, C.; Monemar, B.; Hultman, L.; Pozina, G.

    2014-01-01

    Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 × 10 16 cm −3 to 6 × 10 17 cm −3 . Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at ∼3.47 eV typical for n-type GaN. In the area without pits, quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1–2 × 10 17 cm −3 is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission

  1. Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Glaser, E.R.; Murthy, M.; Freitas, J.A.; Storm, D.F.; Zhou, L.; Smith, D.J.

    2007-01-01

    Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24 GHz have been performed on a series of MBE-grown Mg-doped (10 17 -10 20 cm -3 ) GaN homoepitaxial layers. High-resolution PL at 5 K revealed intense bandedge emission with narrow linewidths (0.2-0.4 meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for GaN heteroepitaxial layers doped with [Mg]>3x10 18 cm -3 , the only visible PL observed was strong shallow donor-shallow acceptor recombination with zero phonon line at 3.27 eV. Most notably, ODMR on this emission from a sample doped with [Mg] of 1x10 17 cm -3 revealed the first evidence for the highly anisotropic g-tensor (g parallel ∼2.19, g perpendicular ∼0) expected for Mg shallow acceptors in wurtzite GaN. This result is attributed to the much reduced dislocation densities (≤5x10 6 cm -3 ) and Mg impurity concentrations compared to those characteristic of the more conventional investigated Mg-doped GaN heteroepitaxial layers

  2. Energetics and magnetism of Co-doped GaN(0001) surfaces: A first-principles study

    International Nuclear Information System (INIS)

    Qin, Zhenzhen; Xiong, Zhihua; Chen, Lanli; Qin, Guangzhao

    2014-01-01

    A comprehensive first-principles study of the energetics, electronic, and magnetic properties of Co-doped GaN(0001) thin films are presented and the effect of surface structure on the magnetic coupling between Co atoms is demonstrated. It is found that Co atoms prefer to substitute the surface Ga sites in different growth conditions. In particular, a CoN/GaN interface structure with Co atoms replacing the first Ga layer is preferred under N-rich and moderately Ga-rich conditions, while CoGa x /GaN interface is found to be energetically stable under extremely Ga-rich conditions. It is worth noted that the antiferromagnetic coupling between Co atoms is favorable in clean GaN(0001) surface, but the existence of ferromagnetism would be expected to occur as Co concentration increased in Ga-bilayer GaN(0001) surface. Our study provides the theoretical understanding for experimental research on Co-doped GaN films and might promise the Co:GaN system potential applications in spin injection devices

  3. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

    2016-02-01

    We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

  4. Highly scalable, resonantly cladding-pumped, Er-doped fiber laser with record efficiency.

    Science.gov (United States)

    Dubinskii, M; Zhang, J; Ter-Mikirtychev, V

    2009-05-15

    We report the performance of a resonantly cladding-pumped, Yb-free, Er-doped fiber laser. We believe this is the first reported resonantly cladding-pumped fiber-Bragg-grating-based, Er-doped, large-mode-area (LMA) fiber laser. The laser, pumped by fiber-coupled InGaAsP/InP laser diode modules at 1,532.5 nm, delivers approximately 48 W of cw output at 1,590 nm. It is believed to be the highest power ever reported from a Yb-free Er-doped LMA fiber. This fully integrated laser also has the optical-to-optical efficiency of approximately 57%, to the best of our knowledge, the highest efficiency reported for cladding-pumped unidirectionally emitting Er-doped laser.

  5. Controlling the Er content of porous silicon using the doping current intensity

    KAUST Repository

    Mula, Guido; Loddo, Lucy; Pinna, Elisa; Tiddia, Maria V; Mascia, Michele; Palmas, Simonetta; Ruffilli, Roberta; Falqui, Andrea

    2014-01-01

    measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes

  6. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

    International Nuclear Information System (INIS)

    Liu Yang; Yang Yongchun

    2016-01-01

    The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop. (paper)

  7. Electrochemical doping of mesoporous silicon with Er: the effect of the current intensity

    Energy Technology Data Exchange (ETDEWEB)

    Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Pinna, Elisa [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d’Armi, 09126 Cagliari (Italy)

    2014-08-30

    Graphical abstract: - Highlights: • A multidisciplinary approach on porous Si electrochemical Er doping is proposed. • The phenomena taking place at the large developed surface of porous silicon are studied. • Electrochemical, optical and structural characterizations are used. • The early stages of doping are studied by electrochemical impedance spectroscopy. • The dependence of the final amount of Er deposited on the current intensity and not only on the transferred charge is shown. - Abstract: There is an ongoing intense research for cost-effective Er-doped Si-based light-emitting devices at the 1.5 μm wavelength. The efficient electrochemical Er-doping of porous silicon for this purpose requires a good understanding of the phenomena involved, since those taking place at the pores inner surface control the doping process. However, almost no attention has been given, to date, to the relevant effects of the current intensity onto the doping results. In this work, the effect of the current intensity on the doping process is explored by means of electrochemical impedance spectroscopy, optical reflectivity and energy dispersive spectrometry via scanning electron microscopy. The combined analysis of all results strongly suggests that the formation of a gel-like Er ethanolate, unaffected by changes in the sample thickness, occurs from the very first stages of the doping process. Moreover, while for constant current doping processes we show that, under any given doping condition, the doping level is proportional to the transferred charge, we demonstrate that performing the doping process using different current intensities may lead to dramatically different results.

  8. The effect of n- and p-type doping on coherent phonons in GaN.

    Science.gov (United States)

    Ishioka, Kunie; Kato, Keiko; Ohashi, Naoki; Haneda, Hajime; Kitajima, Masahiro; Petek, Hrvoje

    2013-05-22

    The effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. We attribute this enhanced coherent amplitude to the transient depletion field screening (TDFS) excitation mechanism, which, in addition to impulsive stimulated Raman scattering (ISRS), contributes to the generation of coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at a surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

  9. Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

    International Nuclear Information System (INIS)

    Qi-Feng, Hou; Xiao-Liang, Wang; Hong-Ling, Xiao; Cui-Mei, Wang; Cui-Bai, Yang; Jin-Min, Li

    2010-01-01

    The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35eV, 1.55eV, 1.98eV, and 2.60eV are observed. It is found that the 1.98eV quenching band is dominated in all the samples and the 2.60eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60eV are discussed. It is suggested that the defect level responsible for quenching at 2.60eV plays an important role for the enhancement of resistivity

  10. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

    Science.gov (United States)

    Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

    2017-01-01

    GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

  11. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  12. Electroplating of erbium on steel surface in ErCl3 doped LiCl-KCl

    International Nuclear Information System (INIS)

    Kondo, Masatoshi; Tanaka, Teruya; Muroga, Takeo; Tsujimura, Hiroyuki; Ito, Yasuhiko

    2012-01-01

    The electroplating of Er metal on the reduced activation ferritic martensitic steel, JLF-1 (Fe-9Cr-2W-0.1C), in a molten salt was studied. The specimen was immersed in the molten ErCl 3 doped LiCl-KCl electrolyte. The electroplating was carried out by a constant potential electrolysis method and a pulsed current electrolysis method. It was found that the Er metal was deposited on the specimen surface due to the electrochemical reaction. (author)

  13. Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies

    Science.gov (United States)

    Teisseyre, Henryk; Lyons, John L.; Kaminska, Agata; Jankowski, Dawid; Jarosz, Dawid; Boćkowski, Michał; Suchocki, Andrzej; Van de Walle, Chris G.

    2017-06-01

    Effective acceptor doping of wide-band-gap semiconductors is still an outstanding problem. Beryllium has been suggested as a shallow acceptor in GaN, but despite sporadic announcements, Be-induced p-type doping has never been practically realized. Be-doped GaN possesses two luminescence bands; one at 3.38 eV and a second near 2.2 eV at an energy close to that of the parasitic yellow luminescence often found in undoped GaN crystals. We have performed high hydrostatic pressure studies of bulk, Be-doped gallium nitride crystals using the diamond anvil cell technique. We observed a splitting of the yellow luminescence line under hydrostatic pressure into two components, one which is strongly dependent on applied pressure and another whose pressure dependence is more modest. Together with hybrid functional calculations, we attribute the strongly-varying component to the beryllium-oxygen complex. The second component of the yellow luminescence possesses very similar pressure behavior to the yellow luminescence observed in undoped samples grown by the same method, behavior which we find consistent with the CN acceptor. At higher pressure, we observe the vanishing of yellow luminescence and a rapid increase in luminescence intensity of the UV line. We explain this as the pressure-induced transformation of the Be-O complex from a highly localized state with large lattice relaxation to a delocalized state with limited lattice relaxation.

  14. Three mode Er3+ ring-doped fiber amplifier for mode-division multiplexed transmission

    NARCIS (Netherlands)

    Jung, Y.; Kang, Q.; Sleiffer, V.A.J.M.; Inan, B.; Kuschnerov, M.; Veljanovski, V.; Corbett, B.; Winfield, R.; Li, Z.; Teh, P.S.; Dhar, A.; Sahu, J.K.; Poletti, F.; Alam, S.U.; Richardson, D.J.

    2013-01-01

    We successfully fabricate three-mode erbium doped fiber with a confined Er3+ doped ring structure and experimentally characterize the amplifier performance with a view to mode-division multiplexed (MDM) transmission. The differential modal gain was effectively mitigated by controlling the relative

  15. Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

    2010-01-01

    Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

  16. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  17. A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

    International Nuclear Information System (INIS)

    Xu, Liang; Wang, Lingling; Huang, Weiqing; Xiao, Wenzhi; Xiao, Gang

    2014-01-01

    First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d 0 magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.

  18. Long afterglow property of Er"3"+ doped Ca_2SnO_4 phosphor

    International Nuclear Information System (INIS)

    Zhang, Dongyun; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

    2016-01-01

    A novel green emitting long afterglow phosphor, Er"3"+ -doped Ca_2SnO_4 (Ca_2SnO_4:Er"3"+), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er"3"+ of 2% was determined. The Ca_2SnO_4:Er"3"+ phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca_2SnO_4:2 mol% Er"3"+ phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca_2SnO_4 host with rare-earth ions (Er"3"+). - Highlights: • A novel green emitting long afterglow phosphor, Ca_2SnO_4:Er"3"+, was prepared. • An optimal doping concentration of Er"3"+ of 2% was determined. • After the UV source was turned off, the Ca_2SnO_4:Er"3"+ showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca_2SnO_4:Er"3"+. • The persistent afterglow of the Ca_2SnO_4:Er"3"+ was attributed to suitable electron or hole traps.

  19. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    International Nuclear Information System (INIS)

    Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-01-01

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

  20. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  1. Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Malguth, E.; Hoffmann, A.; Phillips, M. R.

    2008-12-01

    We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5×1017, 1×1018, 1×1019, and 2×1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal T41(G)-A61(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively.

  2. Er{sup 3+} Doping conditions of planar porous silicon waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Lorrain, N., E-mail: nathalie.lorrain@univ-rennes1.fr [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France); Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B. P. 80518, 22305 Lannion Cedex (France)

    2009-11-15

    EDX and infrared photoluminescence (IR PL) analyses performed on erbium-doped porous silicon waveguides (PSWG) were studied using different doping conditions. Both parameters of the cathodisation electrochemical method used for Er incorporation and parameters of thermal treatments required for Er optical activation were taken into consideration. Firstly, by varying the current density and the time of cathodisation, we have shown that a current density of 0.1 mA/cm{sup 2} for 10 min allows homogeneous Er doping to be achieved throughout the depth of the guiding layer. Then, the PL intensity at 1.53 {mu}m was studied as a function of the oxidation time at 900 deg. C and Er diffusion temperature for 60 min. Increasing the oxidation time up to 1 h allows PL to be enhanced due to active Si-O-Er complex formation whereas an oxidation time of 2 h induces a decrease in PL because of Er segregation. Moreover, an increase in the diffusion temperature induces an optimal distribution of optically active Si-Er-O complexes inside the crystallites. When the temperature is too high, a PSWG densification and Er segregation occurs inducing a decrease in PL due to energy transfer phenomena.

  3. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

    Directory of Open Access Journals (Sweden)

    P. P. Paskov

    2017-09-01

    Full Text Available The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3 was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

  4. The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN

    International Nuclear Information System (INIS)

    Kang, Joongoo; Chang, K. J.

    2007-01-01

    We perform first-principles theoretical calculations to investigate the effect of the presence of Ga vacancy on the defect and magnetic properties of Mn-doped GaN. When a Ga vacancy (V Ga ) is introduced to the Mn ions occupying the Ga lattice sites, a charge transfer occurs from the Mn d band to the acceptor levels of V Ga , and strong Mn-N bonds are formed between the Mn ion and the N atoms in the neighborhood of V Ga . The charge transfer and chemical bonding effects significantly affect the defect and magnetic properties of Mn-doped GaN. In a Mn-V Ga complex, which consists of a Ga vacancy and one Mn ion, the dangling bond orbital of the N atom involved in the Mn-N bond is electrically deactivated, and the remaining dangling bond orbitals of V Ga lead to the shallowness of the defect level. When a Ga vacancy forms a complex with two Mn ions located at a distance of about 6 A, which corresponds to the percolation length in determining the Curie temperature in diluted Mn-doped GaN, the Mn d band is broadened and the density of states at the Fermi level is reduced due to two strong Mn-N bonds. Although the broadening and depopulation of the Mn d band weaken the ferromagnetic stability between the Mn ions, the ferromagnetism is still maintained because of the lack of antiferromagnetic superexchange interactions at the percolation length

  5. Investigation of thermal stability and spectroscopic properties in Er3+ doped bismuth-boron-germanium glasses

    International Nuclear Information System (INIS)

    Nie Qiuhua; Lu Longjun; Dai Shixun; Xu Tiefeng; Shen Xiang; Zhang Xudong; Liang Xiaowei; Zhang Xianghua

    2007-01-01

    A series of Er 3+ -doped 50Bi 2 O 3 -(50-x)B 2 O 3 -xGeO 2 +0.5 wt% Er 2 O 3 (x=0, 5, 10, 15, 20 mol%) glasses were prepared. The thermal stability, absorption spectra, emission spectra and lifetime of the 4 I 13 / 2 level of Er 3+ ions were measured and studied. It is found that the absorption cross-section of Er 3+ , emission intensity and lifetime of the 4 I 13 / 2 level of Er 3+ increase with increasing GeO 2 content in the glass composition, while the fluorescence full-width at half-maximum (FWHM) at 1.5 μm of Er 3+ is about 79 nm in x=20 mol% glass sample under 970 nm pump. The obtained data suggest that this system glass can be used as a candidate host material for potential broadband optical amplifiers

  6. Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.

    2006-01-01

    Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10 19 cm -3 range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10 18 cm -3 , even when Mg concentrations are pushed into the low 10 19 cm -3 range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10 20 cm -3 leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls formed on {1123} planes (Fig. 1a). In

  7. Controlling the Er content of porous silicon using the doping current intensity

    KAUST Repository

    Mula, Guido

    2014-07-04

    The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.

  8. A stabilized optical frequency comb based on an Er-doped fiber femtosecond laser

    Science.gov (United States)

    Xia, Chuanqing; Wu, Tengfei; Zhao, Chunbo; Xing, Shuai

    2018-03-01

    An optical frequency comb based on a 250 MHz home-made Er-doped fiber femtosecond laser is presented in this paper. The Er-doped fiber laser has a ring cavity and operates mode-locked in femtosecond regime with the technique of nonlinear polarization rotation. The pulse duration is 118 fs and the spectral width is 30 nm. A part of the femtosecond laser is amplified in Er-doped fiber amplifier before propagating through a piece of highly nonlinear fiber for expanding the spectrum. The carrier-envelope offset frequency of the comb which has a signal-to-noise ratio more than 35 dB is extracted by means of f-2f beating. It demonstrates that both carrier-envelope offset frequency and repetition frequency keep phase locked to a Rubidium atomic clock simultaneously for 2 hours. The frequency stabilized fiber combs will be increasingly applied in optical metrology, attosecond pulse generation, and absolute distance measurement.

  9. Visible and infrared photoluminescence from Er-doped SiOx

    International Nuclear Information System (INIS)

    Wan, J.; Sheng, C.; Lu, F.; Yuan, S.; Gong, D.W.; Liao, L.S.; Fang, Y.L.; Lin, F.; Wang, X.

    1998-01-01

    The annealing behaviors of photoluminescence of SiO x and Er-doped SiO x grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiO x , four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiO x , the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO 2 , disappears in the annealing temperature range of 500-900C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO 2 to Er ions. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  10. Structural, optical and photo thermal properties of Er3+:Y2O3 doped PMMA nanocomposite

    Science.gov (United States)

    Tabanli, Sevcan; Eryurek, Gonul

    2018-02-01

    Thermal decomposition technique was employed to synthesize of phosphors of yttria (Y2O3) doped with erbium (Er3+) ions. After the synthesized procedure, the nano-sized crystalline powders were annealed at 800oC for 24 h. Annealed powders were embedded in poly(methyl methacrylate) (PMMA) by free radical polymerization to fabricate nanocomposite polymer materials. The crystalline structure of the powder and doped PMMA nanocomposite samples were determined using X-ray diffraction technique. Scherrer's equation and the FW1/5/4/5M method were used to determine average crystalline size and grain size distributions, respectively. The spectroscopic properties of the powders and doped PMMA nanocomposites were studied by measuring the upconversion emission spectra under near-infrared laser excitation at room temperature. The laser-induced photo thermal behaviors of Er3+:Y2O3 nano-powders and doped PMMA nanocomposite were investigated using the fluorescence intensity ratio (FIR) technique.

  11. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  12. On Ni/Au Alloyed Contacts to Mg-Doped GaN

    Science.gov (United States)

    Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2018-01-01

    Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

  13. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

    2005-05-01

    Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Er3+-Al2O3 nanoparticles doping of borosilicate glass

    International Nuclear Information System (INIS)

    Massera, Jonathan; Petit, Laeticia; Hupa, Leena; Hupa, Mikko; Koponen, Joona; Glorieux, Benoit

    2015-01-01

    Novel borosilicate glasses were developed by adding in the glass batch Er 3+ -Al 2 O 3 nanoparticles synthetized by using a soft chemical method. A similar nanoparticle doping with modified chemical vapour deposition (MCVD) process was developed to increase the efficiency of the amplifying silica fibre in comparison to using MCVD and solution doping. It was shown that with the melt quench technique, a Er 3+ -Al 2 O 3 nanoparticle doping neither leads to an increase in the Er 3+ luminescence properties nor allows one to control the rare-earth chemical environment in a borosilicate glass. The site of Er 3+ in the Er 3+ -Al 2 O 3 nanoparticle containing glass seems to be similar as in glasses with the same composition prepared using standard raw materials. We suspect the Er 3+ ions to diffuse from the nanoparticles into the glass matrix. There was no clear evidence of the presence of Al 2 O 3 nanoparticles in the glasses after melting. (author)

  15. Scintillation properties of Er-doped Y3Al5O12 single crystals

    International Nuclear Information System (INIS)

    Yamaji, Akihiro; Ogino, Hiraku; Fujimoto, Yutaka; Suzuki, Akira; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Yoshikawa, Akira

    2013-01-01

    Er-doped Y 3 Al 5 O 12 single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er 3+ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of 4 I 15/2 to the excited states. The photo- and radio-luminescence spectra showed Er 3+ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y 3 Al 5 O 12 was estimated to be 63% of that of Bi 4 Ge 3 O 12 . -- Highlights: •Er doped Y 3 Al 5 O 12 single crystal scintillators were grown with different Er concentrations. •Optical properties associated with 4f-4f transition were evaluated. •Radio luminescence spectra measurements were performed under 5.5 MeV alpha-ray irradiation. •The highest light yield was estimated to be 63% of that of Bi 4 Ge 3 O 12 under 5.5 MeV alpha-ray irradiation

  16. Structural, thermal and spectroscopic properties of highly Er3+-doped novel oxyfluoride glasses for photonic application

    Energy Technology Data Exchange (ETDEWEB)

    Kesavulu, C.R. [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Sreedhar, V.B.; Jayasankar, C.K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Jang, Kiwan [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo, E-mail: ssyi@silla.ac.kr [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of)

    2014-03-01

    Graphical abstract: - Highlights: • Er{sup 3+}-doped novel oxyfluoride glasses have been prepared by melt quenching technique. • Structural, thermal and spectroscopic properties have been carried out. • SALSFEr glasses exhibit intense green and weak red emissions at 365 nm excitation. • Major laser transition for Er{sup 3+} ion in SALSFEr glasses is {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} (1.53 μm). • These results suggest the possibility of using SALSFEr glasses as photonic devices. - Abstract: The Er{sup 3+}-doped novel oxyfluoride glasses of composition (43 − x)SiO{sub 2}–10Al{sub 2}O{sub 3}–24LiF–23SrF{sub 2}–xEr{sub 2}O{sub 3}, where x = 1.0, 2.0, 4.0 and 6.0 mol%, have been prepared by conventional melt quenching technique and are characterized through X-ray diffraction (XRD), differential thermal analysis (DTA), Raman, Fourier transform infrared (FT-IR) analysis, optical absorption spectra, visible (vis) and near-infrared (NIR) emission spectra measurements. Judd–Ofelt (JO) intensity parameters (Ω{sub λ}, λ = 2, 4 and 6) have been derived from the absorption spectrum of 1.0 mol% Er{sub 2}O{sub 3} doped glass and are in turn used to calculate radiative properties for the important luminescent levels of Er{sup 3+} ions. The studied glasses show intense green and weak red visible emissions under 365 nm excitation. The decrease in visible emission intensities with concentration of Er{sup 3+} ions has been explained due to energy transfer processes between Er{sup 3+} ions. Upon excitation at 980 nm laser diode, an intense 1.53 μm NIR emission has been observed with the maximum full width at half maximum (FWHM) for Er{sup 3+}-doped oxyfluoride glasses. The higher Er{sup 3+} ion doping capability and relatively high gain and broad emission at 1.5 μm are the most notable features of these glasses to realize efficient short-length optical amplifiers.

  17. Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers

    DEFF Research Database (Denmark)

    Lester, Christian; Bjarklev, Anders Overgaard; Rasmussen, Thomas

    1995-01-01

    A model for Yb3+-sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths...

  18. Yb and Er co-doped Y2Ce2O7 nanoparticles: synthesis and ...

    Indian Academy of Sciences (India)

    much attention due to their potential applications in display .... Figure 1. XRD patterns of Yb3+ and Er3+ co-doped Y2Ce2O7 nanoparticles prepared for 4 h at different sintering .... vels relax to the ground 4I15/2 level (You et al 2012). For.

  19. Fabrication and properties of Er-doped nanocrystalline phase-seperated optical fibers

    Czech Academy of Sciences Publication Activity Database

    Dhar, Anirban; Kašík, Ivan; Podrazký, Ondřej; Matějec, Vlastimil

    2013-01-01

    Roč. 11, č. 1 (2013), s. 29-35 ISSN 1336-1376 R&D Projects: GA ČR GPP102/10/P554; GA ČR GAP102/10/2139 Institutional support: RVO:67985882 Keywords : Er-doping * Phase-separated glass * Nano-crystalline optical fiber Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  20. Preparation of Rare Earth Doped Alumina-Siloxane Gel and Its ER Effect

    Institute of Scientific and Technical Information of China (English)

    李幼荣; 张明; 周兰香; 邱关明; 井上真一; 冈本宏

    2002-01-01

    Poly(methyl methacrylate) (PMMA) was used to wrap alumina-siloxane sol through emulsion polymerization. A kind of suspensions with notable ER effect was produced by fully mixing the prepared microcapsule with silicon oil. Meanwhile a series of PMMA wrapped alumina-siloxane gel doped with rare earths was obtained and its ER effect was tested, like viscosity of different rare earth ion doped samples in different powder concentrations and at different temperatures, at the same time, leak current density and dielectric constant were measured. Results show that the ER effect of this suspension is remarkable, and its stability is much better. The condition of emulsion polymerization and the mechanism of effect are discussed.

  1. Third-order nonlinearity of Er3+-doped lead phosphate glass

    Energy Technology Data Exchange (ETDEWEB)

    Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Guedes Da Silva, Ilde [ORNL; Siqueira, J. P. [Instituto de Física de São Carlos, Universidade de São Paulo, Brazil; Misoguti, L. [Instituto de Física de São Carlos, Universidade de São Paulo, Brazil; Zilio, S. C. [Instituto de Física de São Carlos, Universidade de São Paulo, Brazil; Boatner, Lynn A [ORNL

    2010-01-01

    The third-order optical susceptibility and dispersion of the linear refractive index of Er3+-doped lead phosphate glass were measured in the wavelength range between 400 and 1940 nm by using the spectrally resolved femtosecond Maker fringes technique. The nonlinear refractive index obtained from the third-order susceptibility was found to be five times higher than that of silica, indicating that Er3+-doped lead phosphate glass is a potential candidate to be used as the base component for the fabrication of photonic devices. For comparison purposes, the Z-scan technique was also employed to obtain the values of the nonlinear refractive index of E-doped lead phosphate glass at several wavelengths, and the values obtained using the two techniques agree to within 15%.

  2. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

    Science.gov (United States)

    Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

    2012-04-01

    The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

  3. Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Dung, Nguyen Duc [Advanced Institute of Science and Technology, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam)

    2016-11-15

    We report the characteristic photoluminescence (PL) spectra of erbium ion (Er{sup 3+})-doped tin dioxide (SnO{sub 2})nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er{sup 3+} ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO{sub 2} and its average particle diameter of approximately 5 nm did not change with Er{sup 3+} ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er{sup 3+} ions. The PL excitation spectra referred to an efficient energy transfer to Er{sup 3+} ions in the presence of SnO{sub 2}nanoparticles. The most intense Er-related emission of SnO{sub 2}:Er{sup 3+} nanoparticles in near infrared region was found in samples containing an Er{sup 3+} ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO{sub 2} nanoparticles.

  4. Epitaxial growth of Er, Ti doped LiNbO3 films prepared by sol-gel method

    International Nuclear Information System (INIS)

    Takahashi, Makoto; Yoshiga, Tsuyoshi; Kajitani, Naofumi; Takeda, Yuki; Sato, Shoji; Wakita, Koichi; Ohnishi, Naoyuki; Hotta, Kazutoshi; Kurachi, Masato

    2006-01-01

    Erbium (Er 3+ ) doped lithium niobate (LiNbO 3 ) thick films were deposited on z-cut congruent LiNbO 3 (LN) substrate by the sol-gel method from the 0.20 mol/dm 3 precursor solution containing various Er 3+ concentration and 0.10 mol/dm 3 poly(vinyl alcohol) (PVA), and their crystal characteristics were evaluated. The Er 3+ concentration in the LN film was controlled by the Er 3+ concentration in the starting solution. The orientation relationships between Er doped LN films and substrates were determined by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and (006) oriented Er doped LN epitaxial layers with parallel epitaxial relationships could be grown on the z-cut LN wafer. Moreover, it was made clear from the electron beam diffraction measurements that the film came to be polycrystalline, when the Er concentration was over 3 mol%. The refractive index of Er-doped LN films decreased with increasing Er concentration. 1.5 mol% Ti: 1.0 mol% Er LN films, which acted as a waveguide, were prepared by our so-gel method. It showed the 1530 nm emission by 980 nm excitation, which was considered to be due to the Er 3+ corresponding to the 4 I 13/2 → 4 I 15/2 transition. (author)

  5. Photo-Hall-effect study of excitation and recombination in Fe-doped GaN

    Science.gov (United States)

    Look, David C.; Leach, Jacob H.; Metzger, Robert

    2017-02-01

    The photo-Hall-effect was applied to the study of electron dynamics in semi-insulating Fe-doped GaN. High-powered light-emitting diodes of wavelengths λ = 940, 536, 449, 402, and 365 nm were used to excite steady-state free-electron volume concentrations Δn = 105-108 cm-3, depending on λ and intensity I0. Electron lifetime τ was determined from the energy E dependence of the excited sheet electron concentration Δns through the relationship Δns = I0τA(E), where the absorbance A(E) is a known function of sample thickness d and absorption coefficient α, and the energy dependence of α is taken from a theory of deep-center photoionization. The major sample impurities were Fe, Si, and C, with [Fe] ≫ [Si] and [C]. Fitted lifetimes τ ranged from 15 to 170 ps, depending on [Fe]. It was found that Δns ∝ I0 for [Si] > [C] and ∝ I01/2 for [Si] [C], some of the neutral Fe3+ is converted to Fe2+ with ground state Fe2+(5E) and excited state Fe2+(5T2); a fit of n vs. temperature T over the range of 290-325 K in the dark establishes E5E with respect to the conduction band: ECB - E5E = 0.564 eV - β5ET, where β5E = 3.6 × 10-4 eV/K. At room temperature, 294 K, ECB - E5E = 0.46 eV and ECB - E5T2 = 0.07 eV.

  6. Microwave hydrothermal synthesis and upconversion properties of Yb3+/Er3+ doped YVO4 nanoparticles.

    Science.gov (United States)

    Kshetri, Yuwaraj K; Regmi, Chhabilal; Kim, Hak-Soo; Lee, Soo Wohn; Kim, Tae-Ho

    2018-05-18

    Yb 3+ and Er 3+ doped YVO 4 (Yb 3+ /Er 3+ :YVO 4 ) nanoparticles with highly efficient near-infrared to visible upconversion properties have been synthesized by microwave hydrothermal process. Uniform-sized Yb 3+ /Er 3+ :YVO 4 nanoparticles were synthesized within 1 h at 140 °C which is relatively faster than the conventional hydrothermal process. Under 980 nm laser excitation, strong green and less strong red emissions are observed which are attributed to 2 H 11/2 , 4 S 3/2 to 4 I 15/2 and 4 F 9/2 to 4 I 15/2 transitions of Er 3+ respectively. The emission intensity is found to depend strongly on the concentration of Yb 3+ . The quadratic dependence of upconversion intensity on the excitation power indicates that the upconversion process is governed by two-photon absorption process.

  7. Microwave hydrothermal synthesis and upconversion properties of Yb3+/Er3+ doped YVO4 nanoparticles

    Science.gov (United States)

    Kshetri, Yuwaraj K.; Regmi, Chhabilal; Kim, Hak-Soo; Wohn Lee, Soo; Kim, Tae-Ho

    2018-05-01

    Yb3+ and Er3+ doped YVO4 (Yb3+/Er3+:YVO4) nanoparticles with highly efficient near-infrared to visible upconversion properties have been synthesized by microwave hydrothermal process. Uniform-sized Yb3+/Er3+:YVO4 nanoparticles were synthesized within 1 h at 140 °C which is relatively faster than the conventional hydrothermal process. Under 980 nm laser excitation, strong green and less strong red emissions are observed which are attributed to 2H11/2, 4S3/2 to 4I15/2 and 4F9/2 to 4I15/2 transitions of Er3+ respectively. The emission intensity is found to depend strongly on the concentration of Yb3+. The quadratic dependence of upconversion intensity on the excitation power indicates that the upconversion process is governed by two-photon absorption process.

  8. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  9. Radiation hardening in sol-gel derived Er3+-doped silica glasses

    International Nuclear Information System (INIS)

    Hari Babu, B.; León Pichel, Mónica; Ollier, Nadège; El Hamzaoui, Hicham; Bigot, Laurent; Savelii, Inna; Bouazaoui, Mohamed; Poumellec, Bertrand; Lancry, Matthieu; Ibarra, Angel

    2015-01-01

    The aim of the present paper is to report the effect of radiation on the Er 3+ -doped sol-gel silica glasses. A possible application of these sol-gel glasses could be their use in harsh radiation environments. The sol-gel glasses are fabricated by densification of erbium salt-soaked nanoporous silica xerogels through polymeric sol-gel technique. The radiation-induced attenuation of Er 3+ -doped sol-gel silica is found to increase with erbium content. Electron paramagnetic resonance studies reveal the presence of E′ δ point defects. This happens in the sol-gel aluminum-silica glass after an exposure to γ-rays (kGy) and in sol-gel silica glass after an exposure to electrons (MGy). The concentration levels of these point defects are much lower in γ-ray irradiated sol-gel silica glasses. When the samples are co-doped with Al, the exposure to γ-ray radiation causes a possible reduction of the erbium valence from Er 3+ to Er 2+ ions. This process occurs in association with the formation of aluminum oxygen hole centers and different intrinsic point defects

  10. Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

    Science.gov (United States)

    Kurose, Noriko; Matsumoto, Kota; Yamada, Fumihiko; Roffi, Teuku Muhammad; Kamiya, Itaru; Iwata, Naotaka; Aoyagi, Yoshinobu

    2018-01-01

    A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1-2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.

  11. Energy transfer processes in Er-doped crystals

    International Nuclear Information System (INIS)

    Georgescu, Serban; Toma, Octavian

    2005-01-01

    In this paper, the microparameters characteristic to various energy-transfer processes in erbium doped crystals are estimated using the Dexter theory. For all the investigated processes, electric dipole-dipole interaction between donor and acceptor ions is assumed. The spectra appearing in Dexter's expression of the microparameter are simulated as a superposition of Lorentzian lines, knowing the positions of both initial and final Stark levels, and calibrated using the Judd-Ofelt model. This approach can give an estimation of the importance of the energy-transfer processes. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Highly optimized tunable Er3+-doped single longitudinal mode fiber ring laser, experiment and model

    DEFF Research Database (Denmark)

    Poulsen, Christian; Sejka, Milan

    1993-01-01

    A continuous wave (CW) tunable diode-pumped Er3+-doped fiber ring laser, pumped by diode laser at wavelengths around 1480 nm, is discussed. Wavelength tuning range of 42 nm, maximum slope efficiency of 48% and output power of 14.4 mW have been achieved. Single longitudinal mode lasing...... with a linewidth of 6 kHz has been measured. A fast model of erbium-doped fiber laser was developed and used to optimize output parameters of the laser...

  13. Comparison on different repetition rate locking methods in Er-doped fiber laser

    Science.gov (United States)

    Yang, Kangwen; Zhao, Peng; Luo, Jiang; Huang, Kun; Hao, Qiang; Zeng, Heping

    2018-05-01

    We demonstrate a systematic comparative research on the all-optical, mechanical and opto-mechanical repetition rate control methods in an Er-doped fiber laser. A piece of Yb-doped fiber, a piezoelectric transducer and an electronic polarization controller are simultaneously added in the laser cavity as different cavity length modulators. By measuring the cavity length tuning ranges, the output power fluctuations, the temporal and frequency repetition rate stability, we show that all-optical method introduces the minimal disturbances under current experimental condition.

  14. Phosphate-core silica-clad Er/Yb-doped optical fiber and cladding pumped laser.

    Science.gov (United States)

    Egorova, O N; Semjonov, S L; Velmiskin, V V; Yatsenko, Yu P; Sverchkov, S E; Galagan, B I; Denker, B I; Dianov, E M

    2014-04-07

    We present a composite optical fiber with a Er/Yb co-doped phosphate-glass core in a silica glass cladding as well as cladding pumped laser. The fabrication process, optical properties, and lasing parameters are described. The slope efficiency under 980 nm cladding pumping reached 39% with respect to the absorbed pump power and 28% with respect to the coupled pump power. Due to high doping level of the phosphate core optimal length was several times shorter than that of silica core fibers.

  15. Doping-induced quantum crossover in Er2Ti2 -xSnxO7

    Science.gov (United States)

    Shirai, M.; Freitas, R. S.; Lago, J.; Bramwell, S. T.; Ritter, C.; Živković, I.

    2017-11-01

    We present the results of the investigation of magnetic properties of the Er2Ti2 -xSnxO7 series. For small doping values, the ordering temperature decreases linearly with x , while the moment configuration remains the same as in the x =0 parent compound. Around x =1.7 doping level, we observe a change in the behavior, where the ordering temperature starts to increase and new magnetic Bragg peaks appear. For the first time, we present evidence of a long-range order (LRO) in Er2Sn2O7 (x =2.0 ) below TN=130 mK. It is revealed that the moment configuration corresponds to a Palmer-Chalker type with a value of the magnetic moment significantly renormalized compared to x =0 . We discuss our results in the framework of a possible quantum phase transition occurring close to x =1.7 .

  16. Vibration-resistant Er-doped superfluorescent fiber source incorporating a Faraday rotator mirror

    Science.gov (United States)

    Zhang, Enkang; Yang, Liu; Gao, Zhongxing; Xue, Bing; Zhang, Yonggang

    2018-04-01

    Improvement in the mean wavelength vibration stability is crucial to the realization of a high-precision fiber-optic gyroscope. We design a vibration-resistant Er-doped superfluorescent fiber source (VR-EDSFS) incorporated with a Faraday rotator mirror and compare it with the conventional Er-doped superfluorescent fiber source (ED-SFS) under different vibration conditions. As shown by experimental results, the mean wavelength vibration stability of the VR-EDSFS is much better than that of the conventional ED-SFS. Under the 1000 to 2000 Hz vibration condition, the former is just 3.4 ppm, which is about 7 ppm less than the latter over 2 h.

  17. Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

    International Nuclear Information System (INIS)

    Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

    2010-01-01

    Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

  18. Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination

    Science.gov (United States)

    Ali Deeb, Manal; Ledig, Johannes; Wei, Jiandong; Wang, Xue; Wehmann, Hergo-Heinrich; Waag, Andreas

    2017-08-01

    Three dimensional GaN structures with different crystal facets and doping types have been investigated employing the surface photo-voltage (SPV) method to monitor illumination-induced surface charge behavior using Kelvin probe force microscopy. Various photon energies near and below the GaN bandgap were used to modify the generation of electron-hole pairs and their motion under the influence of the electric field near the GaN surface. Fast and slow processes for Ga-polar c-planes on both Si-doped n-type as well as Mg-doped p-type GaN truncated pyramid micro-structures were found and their origin is discussed. The immediate positive (for n-type) and negative (for p-type) SPV response dominates at band-to-band and near-bandgap excitation, while only the slow process is present at sub-bandgap excitation. The SPV behavior for the semi-polar facets of the p-type GaN truncated pyramids has a similar characteristic to that on its c-plane, which indicates that it has a comparable band bending and no strong influence of the polarity-induced charges is detectable. The SPV behavior of the non-polar m-facets of the Si-doped n-type part of a transferred GaN column is similar to that of a clean c-plane GaN surface during illumination. However, the SPV is smaller in magnitude, which is attributed to intrinsic surface states of m-plane surfaces and their influence on the band bending. The SPV behavior of the non-polar m-facet of the slightly Mg-doped part of this GaN column is found to behave differently. Compared to c- and r-facets of p-type surfaces of GaN-light-emitting diode micro-structures, the m-plane is more chemically stable.

  19. Effect of Er doping on optical transmission and EL spectra of (Zn, Cd)S:Cu phosphors

    International Nuclear Information System (INIS)

    Patil, P.K.; Nandgave, J.K.; Lawangar Pawar, R.D.

    1991-01-01

    Powder phosphors((Znsub(0.4)Cdsub(0.6))S)doped with Cu and Er have been prepared under the inert atmosphere of argon. The optical transmission spectra of Cu doped phosphors have been investigated and explained on the basis of copper associated defect states. The improvement of optical transmission of the phosphors due to Er doping has been reported and explained. The EL emission spectrum of (Znsub(0.4)Cdsub(0.6))S:Cu:Er phosphors exhibits two broad bands characteristic of Cu. The absence of characteristic Er bands has been explained as an effect of thermal quenching of Er donor levels. (author). 9 refs., 2 figs

  20. Improved diode performance of Ag nanoparticle dispersed Er doped In2O3 film

    Science.gov (United States)

    Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Mondal, Aniruddha

    2018-04-01

    Ag nanoparticle(NP) dispersedEr doped In2O3 film was prepared by sol-gel method followed by thermal evaporation cum glancing angle deposition technique. The Schottky contact based devicecontaining Ag NPs shows ideality factor of ˜180 at 10 K and ˜5 at 300 K, which is lesser as compared to the device that does not contain Ag NPs. The lower ideality factor value all over the temperature range makes the diode more reliable.

  1. Up-conversion luminescence and local heating in Er{sup 3+} doped tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Dwivedi, Y.; Rai, S.B. [Banaras Hindu University, Laser and Spectroscopy Laboratory, Physics Department, Varanasi, UP (India)

    2012-10-15

    The present article discusses the up-conversion and thermometric properties of Er doped tellurite glass on excitation with 976 nm laser radiation. Temperature has been measured using fluorescence intensity ratio variation, in 528/548 and 801/828 nm, with temperature. Temperature at laser focus spot has been estimated by comparing the intensity ratios at different laser powers with the intensity ratio at different temperatures when sample was heated externally. (orig.)

  2. Enhanced frequency upconversion study in Er3+/Yb3+ doped/codoped TWTi glasses

    Science.gov (United States)

    Azam, Mohd; Rai, Vineet Kumar

    2018-04-01

    Er3+/Yb3+ doped/codoped TeO2-WO3-TiO2 (TWTi) glasses have been prepared by using the melt-quenching technique. The upconversion (UC) emission spectra of the developed glasses have been recorded upon 980 nm laser excitation. Three intense UC emission bands have been observed within the green and red region centered at ˜532 nm, ˜553 nm and ˜669 nm corresponding to the 2H11/2→4I15/2, 4S3/2→4I15/2 and 4F9/2→4I15/2 transitions respectively in the singly Er3+ doped glass. On introducing Yb3+ ions in the singly Er3+ doped glass, an enhancement of about ˜ 12 times and ˜50 times in the green and red bands respectively have been observed even at low pump power ˜ 364 mW followed by two photon absorption process. Colour tunability from yellowish green to pure green colour region has been observed on varying the pump power. The prepared glass can be used to produce NIR to green upconverter and colour tunable display devices.

  3. Spectroscopic and structural investigation of undoped and Er{sup 3+} doped hafnium silicate layers

    Energy Technology Data Exchange (ETDEWEB)

    Khomenkova, L., E-mail: khomen@ukr.net [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France); V. Lashkaryov Institute of Semiconductor Physics at NASU, 41 Pr. Nauky, Kyiv 03028 (Ukraine); An, Y.-T. [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France); Khomenkov, D. [Taras Shevchenko National University of Kyiv, Faculty of Physics, 4 Pr. Hlushkov, Kyiv 03022 (Ukraine); Portier, X.; Labbé, C.; Gourbilleau, F. [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France)

    2014-11-15

    This paper demonstrates the functionality of radio-frequency magnetron sputtering for the fabrication of undoped and Er-doped Si-rich-HfO{sub 2} films with specific structural and spectroscopic properties. The effect of post-deposition treatment on film properties was investigated by means of Fourier-transform infrared spectroscopy, Raman scattering and photoluminescence methods, as well as Transmission Electron microscopy. It was observed that annealing treatment at 850–1000 °C causes phase separation process and the formation of HfO{sub 2}, SiO{sub 2} and pure Si phases. This process stimulates also an intense light emission in the 700–950-nm spectral range under broad band excitation. The phase separation mechanism as well as the nature of radiative transitions were discussed. Photoluminescence was ascribed to carrier recombination in silicon clusters and host defects. The appearance of silicon clusters was also confirmed by the comparison of luminescent properties of pure HfO{sub 2}, SiO{sub 2}, Si-rich-HfO{sub 2} and Si-rich-SiO{sub 2} films. Additional argument for Si clusters’ formation was obtained under investigation of Er-doped Si-rich HfO{sub 2} films. These latter demonstrated 1.54-µm Er{sup 3+} luminescence under non-resonant excitation originating from an energy transfer from Si clusters towards Er{sup 3+} ions.

  4. Ionically conducting Er3+-doped DNA-based biomembranes for electrochromic devices

    International Nuclear Information System (INIS)

    Leones, R.; Fernandes, M.; Sentanin, F.; Cesarino, I.; Lima, J.F.; Zea Bermudez, V. de; Pawlicka, A.; Magon, C.J.; Donoso, J.P.; Silva, M.M.

    2014-01-01

    Biopolymer-based membranes have particular interest due to their biocompatibility, Biodegradability, easy extraction from natural resources and low cost. The incorporation of Er 3+ ions into natural macromolecule hosts with the purpose of producing highly efficient emitting phosphors is of widespread interest in materials science, due to their important roles in display devices. Thus, biomembranes may be viewed as innovative materials for the area of optics. This paper describes studies of luminescent material DNA-based membranes doped with erbium triflate and demonstrates that their potential technological applications may be expanded to electrochromic devices. The sample that exhibits the highest ionic conductivity is DNA 10 Er, (1.17 × 10 −5 and 7.76 × 10 −4 S.cm −1 at 30 and 100 °C, respectively). DSC, XRD and POM showed that the inclusion of the guest salt into DNA does not change significantly its amorphous nature. The overall redox stability was ca. 2.0 V indicating that these materials have an acceptable stability window for applications in solid state electrochemical devices. The EPR analysis suggested that the Er 3+ ions are distributed in various environments. A small ECD comprising a Er 3+ -doped DNA-based membrane was assembled and tested by cyclic voltammetry and chronoamperometry. These electrochemical analyses revealed a pale blue color to transparent color change and a decrease of the charge density from -4.0 to -1.2 mC.cm −2 during 4000 color/bleaching cycles

  5. Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

    International Nuclear Information System (INIS)

    Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

    1999-01-01

    It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

  6. Down-conversion luminescence and its temperature-sensing properties from Er3+-doped sodium bismuth titanate ferroelectric thin films

    Science.gov (United States)

    Wang, Shanshan; Zheng, Shanshan; Zhou, Hong; Pan, Anlian; Wu, Guangheng; Liu, Jun-ming

    2015-11-01

    Here, we demonstrate outstanding temperature-sensing properties from Na0.5Bi0.49Er0.01TiO3 (NBT:Er) thin films. The perovskite phase for them is stable in the temperature range from 80 to 440 K. Interestingly, the Er doping enhances the ferroelectric polarization and introduces local dipolar, which are positive for temperature sensing. Pumped by a 488-nm laser, the NBT:Er thin films show strong green luminescence with two bands around 525 and 548 nm. The intensity ratio I 525/ I 548 can be used for temperature sensing, and the maximum sensitivity is about 2.3 × 10-3 K-1, higher than that from Er-doped silicon oxide. These suggest NBT:Er thin film is a promising candidate for temperature sensor.

  7. P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

    Science.gov (United States)

    Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

    2017-01-01

    Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

  8. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Yang, J.; Li, X.; Le, L. C.; He, X. G.; Liu, W.; Li, X. J.; Liang, F. [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, B. S.; Yang, H. [Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Y. T.; Du, G. T. [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 (China)

    2016-03-15

    In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  9. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

    Directory of Open Access Journals (Sweden)

    P. Chen

    2016-03-01

    Full Text Available In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

  10. Spectroscopic properties of Er3+ and Yb3+ co-doped glass ceramics containing SrF2 nanocrystals

    International Nuclear Information System (INIS)

    Qiao Xvsheng; Fan Xianping; Wang Minquan; Zhang Xianghua

    2009-01-01

    The spectroscopic properties of Er 3+ /Yb 3+ co-doped 50SiO 2 -10Al 2 O 3 -20ZnF 2 -20SrF 2 glass and glass ceramic containing SrF 2 nanocrystals were investigated. The formation of SrF 2 nanocrystals in the glass ceramic was confirmed by XRD. The oscillator strengths for several transitions of the Er 3+ ions in the glass ceramic have been obtained and the Judd-Ofelt parameters were then determined. The XRD result and Judd-Ofelt parameters suggested that Er 3+ and Yb 3+ ions had efficiently enriched in the SrF 2 nanocrystals in the glass ceramic. The lifetime of excited states has been used to reveal the surroundings of luminescent Er 3+ and Yb 3+ and energy transfer (ET) mechanism between Er 3+ and Yb 3+ . Much stronger upconversion luminescence and longer lifetime of the Er 3+ /Yb 3+ co-doped glass ceramic were observed in comparison with the Er 3+ /Yb 3+ co-doped glass, which could be ascribed to more efficient ET from Yb 3+ to Er 3+ due to the enrichment of Yb 3+ and Er 3+ and the shortening of the distance between lanthanide ions in the precipitated SrF 2 nanocrystals.

  11. Electric field influence on exciton absorption of Er doped and undoped InSe single crystals

    International Nuclear Information System (INIS)

    Guerbulak, B; Kundakci, M; Ates, A; Yildirim, M

    2007-01-01

    Undoped InSe and Er doped InSe (InSe:Er) single crystals were grown by using the Stockbarger method. Ingots had no cracks and voids on the surface. The absorption measurements were carried out in InSe and InSe:Er samples for U=0 and U=30 V in the temperature range 10-320 K with a step of 10 K. Electric field effects on excitons are observed in InSe and InSe:Er single crystals. The absorption edge shifted towards longer wavelengths and decreased intensity in absorption spectra under an electric field E≅5.9 kV cm -1 . The applied electric field caused a shifting and a decreasing of intensity in the absorption spectra. The shifting of the absorption edge can be explained on the basis of the Franz-Keldysh effect (FKE) or thermal heating of the sample under the electric field. At 10 and 320 K, the first exciton energies for InSe were calculated as 1.336 and 1.291 eV for zero voltage and 1.331 and 1.280 eV for electric field and InSe:Er as 1.329 and 1.251 eV for zero voltage and 1.318 and 1.248 eV for electric field, respectively

  12. Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

    Directory of Open Access Journals (Sweden)

    Tomohiro Inaba

    2016-04-01

    Full Text Available We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures.

  13. A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy

    Science.gov (United States)

    Willoughby, W. R.; Zvanut, M. E.; Paudel, Subash; Iwinska, M.; Sochacki, T.; Bockowski, M.

    2018-04-01

    Electron paramagnetic resonance (EPR) spectroscopy was used to investigate a type of point defect present in 1019 cm-3 carbon-doped GaN substrates grown by hydride vapor phase epitaxy. A broad, isotropic resonance at g ˜ 1.987 was observed at 3.5 K, and the EPR intensity increased with illumination at energies greater than 2.75 eV and decreased with photon energies greater than 0.95 eV. The latter is consistent with a deep level of 0.95 eV above the valence band maximum and implies that the associated defect likely participates in donor compensation. The ionization energy for this defect is close to the predicted value for the (-/0) transition level of CN and transition levels associated with Ga vacancies such as VGa and VGa-ON-2H.

  14. Long afterglow property of Er{sup 3+} doped Ca{sub 2}SnO{sub 4} phosphor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dongyun, E-mail: dyz@sit.edu.cn; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

    2016-05-15

    A novel green emitting long afterglow phosphor, Er{sup 3+} -doped Ca{sub 2}SnO{sub 4} (Ca{sub 2}SnO{sub 4}:Er{sup 3+}), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er{sup 3+} of 2% was determined. The Ca{sub 2}SnO{sub 4}:Er{sup 3+} phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca{sub 2}SnO{sub 4}:2 mol% Er{sup 3+} phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca{sub 2}SnO{sub 4} host with rare-earth ions (Er{sup 3+}). - Highlights: • A novel green emitting long afterglow phosphor, Ca{sub 2}SnO{sub 4}:Er{sup 3+}, was prepared. • An optimal doping concentration of Er{sup 3+} of 2% was determined. • After the UV source was turned off, the Ca{sub 2}SnO{sub 4}:Er{sup 3+} showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca{sub 2}SnO{sub 4}:Er{sup 3+}. • The persistent afterglow of the Ca{sub 2}SnO{sub 4}:Er{sup 3+} was attributed to suitable electron or hole traps.

  15. Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

    International Nuclear Information System (INIS)

    Kusakabe, K.; Furuzuki, T.; Ohkawa, K.

    2006-01-01

    Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220cm 2 /Vs was recorded at the carrier density of 1.1x10 18 cm -3 . Temperature dependence of electrical property revealed that the peak mobility of 234cm 2 /Vs was obtained at 249K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11meV

  16. Resonantly cladding-pumped Yb-free Er-doped LMA fiber laser with record high power and efficiency.

    Science.gov (United States)

    Zhang, Jun; Fromzel, Viktor; Dubinskii, Mark

    2011-03-14

    We report the results of our power scaling experiments with resonantly cladding-pumped Er-doped eye-safe large mode area (LMA) fiber laser. While using commercial off-the-shelf LMA fiber we achieved over 88 W of continuous-wave (CW) single transverse mode power at ~1590 nm while pumping at 1532.5 nm. Maximum observed optical-to-optical efficiency was 69%. This result presents, to the best of our knowledge, the highest power reported from resonantly-pumped Yb-free Er-doped LMA fiber laser, as well as the highest efficiency ever reported for any cladding-pumped Er-doped laser, either Yb-co-doped or Yb-free.

  17. Mechanoluminescence by impulsive deformation of γ-irradiated Er-doped CaF2 crystals

    International Nuclear Information System (INIS)

    Brahme, Nameeta; Shukla, Manju; Bisen, D.P.; Kurrey, U.; Choubey, Anil; Kher, R.S.; Singh, Manisha

    2011-01-01

    An impulsive technique has been used for mechanoluminescence (ML) measurements in γ-irradiated Er doped CaF 2 crystals. When the ML is excited impulsively by the impact of moving piston on to γ-irradiated CaF 2 :Er crystals, two peaks are observed in ML intensity with time and it is seen that the peak intensities of first and second peaks (I m1 and I m2 ) increase with increasing impact velocity. However the time corresponding to first and second peaks (t m1 and t m2 ) shifts towards shorter time values with increasing impact velocity. It is also seen that the total ML intensity I Total initially increases with the impact velocity and then it attains a saturation value for higher values of the impact velocity. We have presented a theoretical explanation for the observed results. - Research highlights: → Impulsive technique has been used for mechanoluminescence (ML) studies in γ-irradiated Er doped CaF 2 crystals. → ML intensity exhibited two peaks with time (I m1 and I m2 ), where the intensity of both the peaks increased with increasing impact velocity. → The time of occurrence of the peaks (t m1 and t m2 ) reduced with increasing the impact velocity. → Total ML intensity (I Total ) first increases and then attains a saturation value with an increment in the impact velocity. → A theoretical explanation is presented to the observed results.

  18. Oxygen plasma effects on zero resistance behavior of Yb,Er-doped YBCO (123) based superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Helmut; Rathmann, Dirk [Department of Physics, Biophysics, and Photosynthesis, Freie Universitaet Berlin (Germany); Banko, Franziska; Steinhart, Martin [Physical Chemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany); Nordmann, Joerg; Voss, Benjamin [Inorganic Chemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany); Walder, Lorenz [Organic Chemistry, Molecular Electrochemistry, Institute of Chemistry of New Materials, University of Osnabrueck (Germany)

    2014-08-15

    Rare-earth doped YBa{sub 2}Cu{sub 3}O{sub 7-δ} samples were synthesized starting from the corresponding oxides Y{sub 2}O{sub 3}, Yb{sub 2}O{sub 3}, Er{sub 2}O{sub 3}, CuO as well as Ba(OH){sub 2} by heating to 950 C under air. The doping concentrations were adjusted to 15 % Yb, 7 % Er and 20 % Yb, 15 % Er, respectively, with respect to the yttrium content. The orthogonal phased (123) YBCO ceramics were exposed to an oxygen plasma for 140 and 380 min. Zero resistance temperature (T{sub c,0}) was determined by measuring the resistivity-temperature dependence using a classical four point measurement approach. Under optimal conditions with respect to the material composition and the oxygen treatment an unusual high zero resistance temperature of 97.5 K (T{sub c,onset} ∼ 101 K) was achieved. This represents an increase of T{sub c,0} by 7.5 K. The oxygen treatment could not be monitored by IR spectroscopy, X-ray fluorescence spectroscopy, and X-ray powder diffraction. The results showed good reproducibility. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Spectroscopic properties of Er3+-doped fluorotellurite glasses containing various modifiers

    Science.gov (United States)

    Burtan-Gwizdała, Bożena; Reben, Manuela; Cisowski, Jan; Grelowska, Iwona; Yousef, El Sayed; Algarni, Hamed; Lisiecki, Radosław; Nosidlak, Natalia

    2017-11-01

    We have investigated the optical and spectroscopic properties of new Er3+-doped fluorotellurite glasses with the basic molar composition 75%TeO2-10%P2O5-10%ZnO-5%PbF2, modified by replacing 5%TeO2 by four various metal oxides, namely MgO, PbO, SrO and CdO. The ellipsometric data have provided a Sellmeier-type dispersion relation of the refractive index of the investigated glasses. The optical absorption edge has been described within the Urbach approach, while the absorption and fluorescence spectra have been analyzed in terms of the standard Judd-Ofelt theory along with the photoluminescence decay of the 4I13/2 and 4S3/2 levels of the Er3+ ion. The absorption and emission spectra of the 4I15/2 ↔ 4I13/2 infrared transition have been analyzed within the McCumber theory to yield the peak emission cross-section and figure of merit (FOM) for the amplifier gain. It appears that the glass containing MgO as a modifier is characterized by the largest FOM suggesting that the fluorotellurite matrix with this oxide can be a good novel host for Er3+ ion doping. Finally, we propose a new simple method to calculate the mean transition energy of the McCumber approach as the arithmetic average of the barycenter wavenumbers of absorption and emission spectra.

  20. Synthesis and characterization of Er3+ doped CaF2 nanoparticles

    International Nuclear Information System (INIS)

    Zhi Guanglin; Song Jinghong; Mei Bingchu; Zhou Weibing

    2011-01-01

    Highlights: → Er 3+ :CaF 2 nanoparticles were synthesized by co-precipitation method with particle size of 8-36 nm. → Increasing dopant concentration increases lattice constants and decreases grain size. → Annealing treatment has a remarkable effect on luminescence properties. → Luminescence intensity decrease with the increasing of the dopant concentration. - Abstract: Er 3+ doped CaF 2 nanoparticles were synthesized by a chemical co-precipitation method. Effect of the dopant concentrations on the structure and optical properties of the CaF 2 nanoparticles was investigated. The X-ray powder diffraction and transmission electron microscopy analysis was used to characterize the structure and morphology of the nanoparticles. The nanoparticles with different dopant concentration exhibited a sphere-like morphology with diameters of about 8-36 nm. The incorporation of Er 3+ ions into CaF 2 resulted in the decrease in grain size and deterioration of crystallinity, but enlarged the lattice constants of CaF 2 . Additional annealing treatment at 400 deg. C to the prepared CaF 2 removed the NO 3 - and OH - groups adsorbed on the particles' surfaces, and improved the optical properties of the nanoparticles. The fluorescence intensity, with a maximum at approximately 0.4 mol%, decreased with the increase in doping concentration because of concentration quenching.

  1. Spectroscopic properties of Er/Nd co-doped yttrium lanthanum oxide transparent ceramics pumped at 980 nm

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Yingjie; Yang, Qiuhong, E-mail: yangqiuhong@shu.edu.cn; Gui, Yan; Yuan, Ye; Lu, Qing

    2016-05-15

    (Er{sub 0.01}Nd{sub x}Y{sub 0.89-x}La{sub 0.1}){sub 2}O{sub 3} (x = 0, 0.001, 0.002, 0.005, 0.01) transparent ceramics were prepared by conventional ceramic processing. The Nd{sup 3+} content dependencies of mid-infrared, near infrared and up-conversion emission of Er{sup 3+} pumped at 980 nm were fully presented. Mechanism of energy transfer between Er{sup 3+} and Nd{sup 3+} was also demonstrated. The results showed that co-doping 0.1 at% Nd{sup 3+} into 1 at% Er{sup 3+} doped yttrium lanthanum oxide transparent ceramic enhanced the 2.7 μm emission significantly and meanwhile suppressed the 1.5 μm emission effectively which indicated an improvement in population inversion between Er:{sup 4}I{sub 11/2} and Er:{sup 4}I{sub 13/2}. Moreover, green up-conversion emission of Er{sup 3+} ion also showed a great improvement by co-doping 0.1 at% Nd{sup 3+}. Those great results were attributed to energy recycle from Er:{sup 4}I{sub 13/2} to Er:{sup 4}I{sub 11/2}. The energy recycle was mainly built by the two energy transfer between Er{sup 3+} and Nd{sup 3+} (one is from Er to Nd, another is in opposite way). So, Er/Nd co-doped yttrium lanthanum oxide transparent ceramic with Nd in low concentration can be considered as a promising laser material for ∼3 μm and up-conversion laser application. - Highlights: • (Er{sub 0.01}Nd{sub x}Y{sub 0.89-x}La{sub 0.1}){sub 2}O{sub 3} transparent ceramics were prepared. • The emission of 2.7 μm of Er{sup 3+} ion was significantly enhanced as x was 0.001. • The emission of 1.5 μm of Er{sup 3+} ion was suppressed greatly by co-doping Nd{sup 3+} ion. • Mechanism of Er–Nd energy transfer was discussed by the energy sketch.

  2. Photoluminescence at 1.54 {mu}m of Er-doped hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bresler, Mikhail; Gusev, Oleg; Kuznetsov, Alexey; Kudoyarova, Vera; Terukov, Evgenii; Yassievich, Irina [A.F. Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Ulber, Isabell; Weiser, Gerhard [Philipps-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

    1998-05-11

    Photoluminescence (PL) and light absorption of Er-doped amorphous hydrogenated silicon samples are measured at 77-300K. The temperature dependence of luminescence of erbium ions in a-Si:H(Er) is compared with that of intrinsic PL of a-Si:H. The lifetime of excited erbium ions in this amorphous matrix changes from 20 to 8 {mu}s in this temperature range. We propose a defect-related Auger excitation (DRAE) mechanism of erbium luminescence and demonstrate that it is consistent with the whole set of our experimental results. The temperature quenching of the erbium luminescence observed above 200K, with the activation energy of 250 meV, results from the competition of the DRAE and multiphonon nonradiative defect processes for D{sup 0}+e>D{sup -} transition

  3. Fluorescence properties of Yb3+-Er3+ co-doped phosphate glasses containing silver nanoparticles

    Science.gov (United States)

    Martínez Gámez, Ma A.; Vallejo H, Miguel A.; Kiryanov, A. V.; Licea-Jiménez, L.; Lucio M, J. L.; Pérez-García, S. A.

    2018-04-01

    Er3+-Yb3+ co-doped phosphate glasses containing silver nitrate (SN), were fabricated. Transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS) analyses were used to evidence the nucleation and presence of silver nanoparticles (SNP). The basic parameters of the glasses were inspected by means of absorption and fluorescence spectra, and fluorescence lifetimes under excitation at 916 nm (in-band of Yb3+), and at 406 nm (in-band of surface plasmon resonance given by the presence of SNP). The spectra as well as estimates for the basic parameters defining the lasing/amplifying potential of the glasses were studied as a function of SN concentration. The experimental results indicate that by increasing the SN content an enhancement of Er3+/Yb3+ fluorescence takes place.

  4. Mid-infrared emission and Raman spectra analysis of Er(3+)-doped oxyfluorotellurite glasses.

    Science.gov (United States)

    Chen, Fangze; Xu, Shaoqiong; Wei, Tao; Wang, Fengchao; Cai, Muzhi; Tian, Ying; Xu, Shiqing

    2015-04-10

    This paper reports on the spectroscopic and structural properties in Er(3+)-doped oxyfluorotellurite glasses. The compositional variation accounts for the evolutions of Raman spectra, Judd-Ofelt parameters, radiative properties, and fluorescent emission. It is found that, when maximum phonon energy changes slightly, phonon density plays a crucial role in quenching the 2.7 μm emission generated by the Er(3+):(4)I11/2→(4)I13/2 transition. The comparative low phonon density contributes strong 2.7 μm emission intensity. The high branching ratio (18.63%) and large emission cross section (0.95×10(-20)  cm(2)) demonstrate that oxyfluorotellurite glass contained with 50 mol.% TeO2 has potential application in the mid-infrared region laser.

  5. Up-conversion mechanisms in Er{sup 3+} doped YbAG crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kaczkan, Marcin; Borowska, Maja [Institute of Microelectronics and Optoelectronics PW, Warsaw (Poland); Malinowski, Michal [Institute of Microelectronics and Optoelectronics PW, Warsaw (Poland); Institute of Electronic Materials Technology, Warsaw (Poland); Lukasiewicz, Tadeusz; Kolodziejak, Katarzyna [Institute of Electronic Materials Technology, Warsaw (Poland)

    2009-07-15

    Up-conversion phenomena leading to the red, green and violet emissions in erbium doped ytterbium-aluminum garnet (YbAG) are investigated. Absorption and emission spectra and luminescence dynamics from various excited states of YbAG:Er{sup 3+} were registered. The low temperature absorption spectra were used to determine Stark levels energies of Er{sup 3+} ion in the investigated host. Emissions from the high lying excited states {sup 2}G{sub 9/2}, {sup 4}S{sub 3/2} and {sup 4}F{sub 9/2} of Er{sup 3+} were characterized under pulsed multi-photon IR excitation in the region of wavelength corresponding to the strong {sup 2}F{sub 7/2} {yields} {sup 2}F{sub 5/2} absorption transition of Yb{sup 3+} ions. Using the rate equations formalism the dynamics of the observed emissions were modeled. From the comparison of the measured and calculated decays the energy transfer rates between Yb{sup 3+} and Er{sup 3+} ions were evaluated. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Spectroscopic properties of Er{sup 3+}-doped antimony oxide glass

    Energy Technology Data Exchange (ETDEWEB)

    Ouannes, K.; Soltani, M.T. [Laboratoire de Physique Photonique et Nanomatériaux Multifonctionnels, Université de Biskra, BP 145 RP, 07000 Biskra (Algeria); Poulain, M. [UMR 6226 – Verres et Céramiques – Campus de Beaulieu, Université' de Rennes 1, 35042 Rennes (France); Boulon, G.; Alombert-Goget, G.; Guyot, Y.; Pillonnet, A. [Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne (France); Lebbou, K., E-mail: kheireddine.lebbou@univ-lyon1.fr [Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne (France)

    2014-08-01

    Highlight: • As a function of Er concentration, glasses corresponding to the 60Sb{sub 2}O{sub 3}–20WO{sub 3}–(19 − x) Na{sub 2}O–1Bi{sub 2}O{sub 3}, xEr{sub 2}O{sub 3} formula were prepared. The quantum efficiency shows that this glass could be promised for laser devices. - Abstract: Spectroscopic properties of Er{sup 3+} ions have been studied in the 60Sb{sub 2}O{sub 3}–20WO{sub 3}–19Na{sub 2}O–1Bi{sub 2}O{sub 3} (SWNB) glasses doped with 0.25 and 0.50 mol% Er{sub 2}O{sub 3} respectively. The Judd–Ofelt parameters measured from the absorption spectra have been used to calculate the radiative life-time (τ{sub r}) and the stimulated emission cross section. The low phonon energy, a reduced quenching effect and a high quantum efficiency of 90% for the 1.53 μm expected laser emission into pumping at 980 nm are in favor of promising material laser application.

  7. Influence of Impurities on the Luminescence of Er3+ Doped BaTiO3 Nanophosphors

    Directory of Open Access Journals (Sweden)

    G. D. Webler

    2014-01-01

    Full Text Available The influence of the presence of barium carbonate (BaCO3 phase on the luminescence properties of barium titanate nanocrystals (BaTiO3 powders was investigated. Structural and optical characterizations of erbium (Er3+ doped BaTiO3 synthesized by the sol-emulsion-gel were performed. Using Fourier transform infrared spectroscopy and X-ray powder diffraction, we identified the presence of impurities related to BaCO3 and quantified its fraction. It was observed that the presence of BaCO3 phase, even at low levels, depletes significantly the infrared-to-visible upconverted luminescence efficiency of the produced nanopowders.

  8. Structural phase transition and magnetic properties of Er-doped BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Li, Y T; Zhang, H G; Dong, X G; Li, Q; Mao, W W; Dong, C L; Ren, S L; Li, X A; Wei, S Q

    2013-01-01

    The structural phase transition and local structural distortion of Er-doped BiFeO 3 nanoparticles have been discussed in order to understand the variation of magnetic properties in this system. The X-ray diffraction patterns and X-ray absorption fine structure of these samples demonstrate that there is structural phase transition and no obvious local structural distortion with the increasing of doping concentration. Unfortunately, no ferromagnetic properties have been observed even at a lower temperature. And the X-ray absorption spectra of Fe 2p core level of these samples are totally same, especially the energy positions do not shift which means the consistent valence states of Fe ions.

  9. Luminescence of Er3+ doped double lead halide crystals under X-ray, UV, VIS and IR excitation

    Science.gov (United States)

    Serazetdinov, A. R.; Smirnov, A. A.; Pustovarov, V. A.; Isaenko, L. I.

    2017-09-01

    Er3+ doped double lead halide crystals incorporate a number of properties making them interesting for practical use in light conducting materials. X-ray excited luminescence (XRL) spectra, photoluminescence (PL) spectra in region of 1.5-3.5 eV, photoluminescence excitation (PLE) spectra (2.75-5 eV) and anti-stokes luminescence (ASL) spectra were measured at room temperature in KPb2Cl5 (KPC) and RbPb2Br5 (RPB) matrices doped with Er3+ (1%) ions and in KPC doped with Er3++ Yb3+ ions(1:3 ratio concentration). Intraconfigurational f→f transitions are observed in Er3+ ions in most of the cases. The concrete spectrum form is strongly dependent on the excitation energy. Under 980 nm excitation upper Er3+ levels are excited, showing upconversional processes. In case of 313 nm (UV) and 365 nm (VIS) excitation self trapped exciton luminescence was detected in RPB crystal. Additional Yb3+ doping ions strongly increase quantum yield under 980 nm excitation and this doping cause insignificant influence on quantum yield under VIS or UV excitation.

  10. The impact of ScO{sub x}N{sub y} interlayers on unintentional doping and threading dislocations in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, T; Moram, M A; Rao, D V Sridhara; Li, H; Kappers, M J; Oliver, R A, E-mail: tz234@cam.ac.u [Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

    2010-02-01

    To reduce the threading dislocation density in (0001) GaN grown on c-plane sapphire, a series of samples have been grown using scandium oxynitride (ScO{sub x}N{sub y}) interlayers (ILs) on AlN-on-sapphire templates. Scanning capacitance microscopy (SCM) has been employed to investigate the unintentional doping in GaN with varying ScO{sub x}N{sub y} IL thicknesses. The use of ScO{sub x}N{sub y} ILs decreases the threading dislocation density. An unintentionally n-doped layer has been identified by SCM close to the GaN/ScO{sub x}N{sub y} interface. The average width of this conductive layer has been quantified and found to increase as the ScO{sub x}N{sub y} IL thickness increases up to 13 nm.

  11. Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

    2010-01-01

    GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

  12. Concentration dependent luminescence quenching of Er{sup 3+}-doped zinc boro-tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.; Reza Dousti, M.

    2013-12-15

    Understanding the mechanism of luminescence quenching in rare earth doped tellurite glass is an important issue. The Er{sup 3+}-doped boro-tellurite glasses with compositions 30B{sub 2}O{sub 3}+10ZnO+(60−x)TeO{sub 2}+xEr{sub 2}O{sub 3} (where x=0, 0.5, 1, 1.5 and 2 mol%) were prepared by melt quenching method. Structural and optical properties of the proposed glasses were characterized using XRD, FTIR, density, UV–vis-IR absorption and PL spectroscopy. The amorphous nature of these glasses was confirmed by XRD technique. The IR-spectrum reveals five absorption bands assigned to different B–O and Te–O vibrational groups. UV–vis-IR absorption spectrum exhibits seven absorption bands at 6553, 10,244, 12,547, 15,360, 19,230, 20,661 and 22,522 cm{sup −1} corresponding to {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}I{sub 9/2}, {sup 4}F{sub 9/2}, {sup 2}H{sub 11/2}, {sup 4}F{sub 7/2} and {sup 4}F{sub 3/2} excited states of Er{sup 3+} ion respectively. The optical band gap energy (E{sub opt}) corresponding to the direct and indirect allowed transitions decreased, while the Urbach energy and cut-off wavelengths are increased by the introduction of Er{sup 3+} ions. The refractive index, density and phonon cut-off edge of the samples are increased and the molar volume decreased with the further addition of dopants. The Judd–Ofelt parameter (Ω{sub 2}) decreased from 5.73 to 3.13×10{sup −20} cm{sup 2} with the increase of erbium ions concentration from 0.5 to 2 mol%. The PL spectra show green emissions for the transition from {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} excited states to {sup 4}I{sub 15/2} ground state, which show strong quenching due to the addition of Er{sup 3+} ions. -- Highlights: • Er{sup 3+}-doped zinc boro-tellurite glass has been synthesized by melt quench method. • Spectroscopic properties dependent concentration is analyzed by different techniques. • Judd–Ofelt intensity parameter (Ω{sub 2}) decreased by increase in erbium

  13. Spectroscopy and near infrared upconversion of Er{sup 3+}-doped TZNT glasses

    Energy Technology Data Exchange (ETDEWEB)

    Venkata Krishnaiah, K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Marques-Hueso, J. [Institute of Sensors, Signals and Systems & Institute of Photonics and Quantum Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Suresh, K.; Venkataiah, G. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Richards, B.S. [Light Technology Institute (LTI), Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe (Germany); Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Jayasankar, C.K., E-mail: ckjaya@yahoo.com [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2016-01-15

    In this paper we report on the near infrared (NIR) upconversion (UC) and spectroscopic properties of erbium (Er{sup 3+})-doped TeO{sub 2}–ZnO–Nb{sub 2}O{sub 5}–TiO{sub 2} (TZNT) oxide glasses. Judd–Ofelt theory has been applied to investigate the intensity parameters (Ω{sub λ}, λ=2, 4 and 6) which are used to derive radiative properties of the fluorescent levels. The different glasses present high refractive indices, low dispersion and Abbe numbers, as determined by variable angle spectroscopic ellipsometry. Under 980 nm excitation, the NIR emission profile and full width at half maximum have been studied in a broad range of Er{sup 3+} concentrations (0.01–3.0 mol%). On the other side, NIR UC has been obtained by exciting at 1523 nm, showing an increase of the intensity with Er{sup 3+} ion density in the studied range. The decay curves of the {sup 4}I{sub 13/2} level exhibit single exponential nature for all the different concentrations. The lifetime of the {sup 4}I{sub 13/2} level has been found to decrease (3.73–1.20 ms) after an initial increase (3.65–3.73 ms) with increasing of Er{sup 3+} ion concentration. The TZNT samples show broadband UC emission at 1.0 µm, which match with the band gap of silicon. This reveals that the investigated glasses could find application in photonics, for example non-linear optics and photovoltaic’s. - Highlights: • The Er{sup 3+}:TZNT glasses have been synthesized and optically characterized. • Refractive index and Abbe number of the TZNT glasses were measured by Ellipsometry. • Near infrared emission (1400–1600 nm) has been obtained under 980 nm excitation. • Near infrared upconversion at 980 nm has been investigated under 1523 nm excitation.

  14. Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass for waveguide amplifier application

    International Nuclear Information System (INIS)

    Zhao Shilong; Wang Xiuli; Fang Dawei; Xu Shiqing; Hu Lili

    2006-01-01

    Tungsten-tellurite glass with molar composition of 60TeO 2 -30WO 3 -10Na 2 O has been investigated for developing planar broadband waveguide amplifier application. Spectroscopic properties and thermal stability of Er 3+ -doped tungsten-tellurite glass have been discussed. The results show that the introduction of WO 3 increases significantly the glass transition temperature and the maximum phonon energy. Er 3+ -doped tungsten-tellurite glass exhibits high glass transition temperature (377 deg. C), large emission cross-section (0.91 x 10 -20 cm 2 ) at 1532 nm and broad full width at half maximum (FWHM), which make it preferable for broadband Er 3+ -doped waveguide amplifier application

  15. Spectroscopic investigation of zinc tellurite glasses doped with Yb3 + and Er3 + ions

    Science.gov (United States)

    Bilir, Gökhan; Kaya, Ayfer; Cinkaya, Hatun; Eryürek, Gönül

    2016-08-01

    This paper presents a detailed spectroscopic investigation of zinc tellurite glasses with the compositions (0.80 - x - y) TeO2 + (0.20) ZnO + xEr2O3 + yYb2O3 (x = 0, y = 0; x = 0.004, y = 0; x = 0, y = 0.05 and x = 0.004, y = 0.05 per moles). The samples were synthesized by the conventional melt quenching method. The optical absorption and emission measurements were conducted at room temperature to determine the spectral properties of lanthanides doped zinc tellurite glasses and, to study the energy transfer processes between dopant lanthanide ions. The band gap energies for both direct and indirect possible transitions and the Urbach energies were measured from the absorption spectra. The absorption spectra of the samples were analyzed by using the Judd-Ofelt approach. The effect of the ytterbium ions on the emission properties of erbium ions was investigated and the energy transfer processes between dopant ions were studied by measuring the up-conversion emission properties of the materials. The color quality parameters of obtained visible up-conversion emission were also determined as well as possibility of using the Er3 + glasses as erbium doped fiber amplifiers at 1.55 μm in infrared emission region.

  16. Spectroscopic investigation of zinc tellurite glasses doped with Yb(3+) and Er(3+) ions.

    Science.gov (United States)

    Bilir, Gökhan; Kaya, Ayfer; Cinkaya, Hatun; Eryürek, Gönül

    2016-08-05

    This paper presents a detailed spectroscopic investigation of zinc tellurite glasses with the compositions (0.80-x-y) TeO2+(0.20) ZnO+xEr2O3+yYb2O3 (x=0, y=0; x=0.004, y=0; x=0, y=0.05 and x=0.004, y=0.05 per moles). The samples were synthesized by the conventional melt quenching method. The optical absorption and emission measurements were conducted at room temperature to determine the spectral properties of lanthanides doped zinc tellurite glasses and, to study the energy transfer processes between dopant lanthanide ions. The band gap energies for both direct and indirect possible transitions and the Urbach energies were measured from the absorption spectra. The absorption spectra of the samples were analyzed by using the Judd-Ofelt approach. The effect of the ytterbium ions on the emission properties of erbium ions was investigated and the energy transfer processes between dopant ions were studied by measuring the up-conversion emission properties of the materials. The color quality parameters of obtained visible up-conversion emission were also determined as well as possibility of using the Er(3+) glasses as erbium doped fiber amplifiers at 1.55μm in infrared emission region. Copyright © 2016 Elsevier B.V. All rights reserved.

  17. Transmission electron microscopy of GaN based, doped semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pretorius, A.

    2006-07-01

    This thesis addresses the analysis of GaN based heterostructures with transmission electron microscopy (TEM). Basic properties of the material of interest are introduced in chapter 2. These include the structural and optical properties as well as an introduction to the growth methods used for the samples analysed in this work. In chapter 3 a brief theoretical treatment of TEM is given. As one main topic of this work is the determination of the In concentration in InGaN islands using strain state analysis, a detailed description of the method is given. Chapter 4 describes the results obtained for pyramidal defects present in metalorganic vapour phase epitaxy grown GaN:Mg with high dopant concentration. Based on the experimental results and the well established knowledge that GaN of inverted polarity is present inside the pyramidal defects, a variety of basal plane inversion domain boundary models was set up. From these models, HRTEM images were simulated using the multislice approach, followed by a quantitative comparison to experimentally obtained HRTEM images. Another focus of this work is the analysis of In{sub x}Ga{sub 1-x}N islands grown on GaN presented in chapter 5. Following a literature survey which describes different methods used to obtain In{sub x}Ga{sub 1-x}N islands, the first topic is the distinction of In{sub x}Ga{sub 1-x}N islands and metal droplets, which can form during growth. This is followed by the experimental results of molecular beam epitaxy and metalorganic vapour phase epitaxy grown In{sub x}Ga{sub 1-x}N island and quantum dot samples. (orig.)

  18. Thermal lens study of thermo-optical properties and concentration quenching of Er3+-doped lead pyrophosphate based glasses

    Energy Technology Data Exchange (ETDEWEB)

    Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil

    2012-01-01

    In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.

  19. Optical properties of gold nanoparticle embedded Er{sup 3+} doped lead–tellurite glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sazali, E.S.; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.; Arifin, R.; Rohani, M.S.; Awang, A.

    2014-09-01

    Highlights: • Er{sup 3+} doped lead–tellurite glass with and without GNPs has been synthesized. • The existence of Au NPs with average diameter of 6.09 nm dispersed in glass matrix. • Plasmonic effect from Au NPs exert prominent enhancement in UC. - Abstract: Enhanced optical properties of rare earth doped glasses for sundry applications are current challenges in materials science and technology. Series of gold nanoparticles (GNPs) embedded Er{sup 3+} doped TeO{sub 2}–PbO–PbO{sub 2} glasses are synthesized and the influences of GNPs on the optical behaviors are examined. XRD spectra confirm the amorphous nature of all the glass samples. TEM images display the existence of a broad distribution of spherical crystalline GNPs with average diameter ∼6.09 nm. UV–Vis–NIR spectra reveal seven absorption bands centered at 490, 526, 551, 652, 800, 982 and 1520 nm due to the absorptions from the ground state to different excited states. Two surface plasmon resonance bands of gold (Au{sup 0}) are evidenced at 556 and 585 nm. The sizable decrease in the optical band gap (2.82–1.09 eV) with the increase of GNPs concentration from 0.025 to 0.1 mol% is attributed to the generation of higher NPs nucleation sites. The intensity parameters related to the radiative transitions within 4f{sup n} configuration of Er{sup 3+} ion are determined and analyzed using Judd–Ofelt (J–O) theory. The room temperature up-conversion emission spectra under 779 nm excitations shows three peaks centered at 520, 550 and 660 nm corresponding to the transitions from {sup 2}H{sub 11/2}, {sup 4}S{sub 3/2} and {sup 4}F{sub 9/2} excited states to {sup 4}I{sub 15/2} ground state. Significant enhancement in the luminescence intensity is primarily ascribed to surface plasmon resonance mediated strong local field effect of GNPs in the proximity Er{sup 3+} ion and radiative energy transfer. The maximum enhancement are evident for green and red bands at 0.05 mol% of Au. The stimulated

  20. Investigations on luminescence behavior of Er3+/Yb3+ co-doped boro-tellurite glasses

    Science.gov (United States)

    Maheshvaran, K.; Arunkumar, S.; Venkata Krishnaiah, K.; Marimuthu, K.

    2015-01-01

    Er3+/Yb3+ co-doped boro-tellurite glasses with the chemical composition 30TeO2+(24 - x)B2O3 + 15SrO + 10BaO + 10Li2O + 10LiF + 1Er2O3 + xYb2O3 (where x = 0, 0.1, 0.5, 1 and 2 in wt%) have been prepared and their luminescence behavior were studied and reported. Absorption spectral measurements have been used to derive the Judd-Ofelt (JO) intensity parameters from the experimental and calculated oscillator strength values following the JO theory. The various lasing parameters such as stimulated emission cross-section (σEp), experimental and calculated branching ratios (βR) and radiative lifetime (τcal) for the 2H9/2 → 4I15/2, 4S3/2 → 4I15/2 and 4I13/2 → 4I15/2 emission transitions were determined using the JO intensity parameters. The absorption and emission cross-section values for the 4I13/2 → 4I15/2 emission band have been calculated using McCumbar theory and the Gain cross-section for the 4I13/2 → 4I15/2 emission transition also obtained. The upconversion emission mechanism have been studied through various energy transfer processes and the intensity of the upconversion emission transitions are found to increase with the increase in Yb3+ ion concentration. The luminescence decay curves corresponding to the 4I13/2 → 4I15/2 transition of the Er3+/Yb3+ co-doped boro-tellurite glasses under 980 nm excitation wavelength have also been studied and reported in the present work.

  1. Structural and spectroscopic studies on Er{sup 3+} doped boro-tellurite glasses

    Energy Technology Data Exchange (ETDEWEB)

    Selvaraju, K. [Department of Physics, Gandhigram Rural University, Gandhigram - 624 302 (India); Marimuthu, K., E-mail: mari_ram2000@yahoo.com [Department of Physics, Gandhigram Rural University, Gandhigram - 624 302 (India)

    2012-04-01

    Er{sup 3+} doped boro-tellurite glasses with the chemical composition (69-x)B{sub 2}O{sub 3}-xTeO{sub 2}-15MgO-15K{sub 2}O-1Er{sub 2}O{sub 3} (where x=0, 10, 20, 30 and 40 wt%) have been prepared and their structural and spectroscopic behavior were studied and reported. The varying tellurium dioxide content in the host matrix that results, changes in structural and spectroscopic behavior around Er{sup 3+} ions are explored through XRD, FTIR, UV-VIS-NIR and luminescence measurements. The XRD pattern confirms the amorphous nature of the prepared glasses and the FTIR spectra explore the fundamental groups and the local structural units in the prepared boro-tellurite glasses. The bonding parameters ({beta}{sup Macron} and {delta}) have been calculated from the observed band positions of the absorption spectra to claim the ionic/covalent nature of the prepared glasses. The Judd-Ofelt (JO) intensity parameters {Omega}{sub {lambda}} ({lambda}=2, 4 and 6) were determined through experimental and calculated oscillator strengths obtained from the absorption spectra and their results are studied and compared with reported literature. The variation in the JO parameters {Omega}{sub {lambda}} ({lambda}=2, 4 and 6) with the change in chemical composition have been discussed in detail. The JO parameters have also been used to derive the important radiative properties like transition probability (A), branching ratio ({beta}{sub R}) and peak stimulated emission cross-section ({sigma}{sub P}{sup E}) for the excited state transitions {sup 2}H{sub 9/2}{yields}{sup 4}I{sub 15/2} and {sup 2}H{sub 11/2} and {sup 4}S3{sub /2}{yields}{sup 4}I{sub 15/2} of the Er{sup 3+} ions and the results were studied and reported. Using Davis and Mott theory, optical band gap energy (E{sub opt}) values for the direct and indirect allowed transitions have been calculated and discussed along with the Urbach energy values for the prepared Er{sup 3+} doped boro-tellurite glasses in the present study. The

  2. Structural and spectroscopic studies on Er3+ doped boro-tellurite glasses

    Science.gov (United States)

    Selvaraju, K.; Marimuthu, K.

    2012-04-01

    Er3+ doped boro-tellurite glasses with the chemical composition (69-x)B2O3-xTeO2-15MgO-15K2O-1Er2O3 (where x=0, 10, 20, 30 and 40 wt%) have been prepared and their structural and spectroscopic behavior were studied and reported. The varying tellurium dioxide content in the host matrix that results, changes in structural and spectroscopic behavior around Er3+ ions are explored through XRD, FTIR, UV-VIS-NIR and luminescence measurements. The XRD pattern confirms the amorphous nature of the prepared glasses and the FTIR spectra explore the fundamental groups and the local structural units in the prepared boro-tellurite glasses. The bonding parameters (βbar and δ) have been calculated from the observed band positions of the absorption spectra to claim the ionic/covalent nature of the prepared glasses. The Judd-Ofelt (JO) intensity parameters Ωλ (λ=2, 4 and 6) were determined through experimental and calculated oscillator strengths obtained from the absorption spectra and their results are studied and compared with reported literature. The variation in the JO parameters Ωλ (λ=2, 4 and 6) with the change in chemical composition have been discussed in detail. The JO parameters have also been used to derive the important radiative properties like transition probability (A), branching ratio (βR) and peak stimulated emission cross-section (σPE) for the excited state transitions 2H9/2→4I15/2 and 2H11/2 and 4S3/2→4I15/2 of the Er3+ ions and the results were studied and reported. Using Davis and Mott theory, optical band gap energy (Eopt) values for the direct and indirect allowed transitions have been calculated and discussed along with the Urbach energy values for the prepared Er3+ doped boro-tellurite glasses in the present study. The optical properties of the prepared glasses with the change in tellurium dioxide have been studied and compared with similar results.

  3. Investigations on structural and optical behavior of Er3+ doped lead boro-tellurite glasses

    Science.gov (United States)

    Karthikeyan, P.; Suthanthirakumar, P.; Vijayakumar, R.; Marimuthu, K.

    2015-06-01

    Er3+ doped lead boro-tellurite glasses with the chemical composition (30-x)B2O3+30TeO2+23MgO+17PbF2+xEr2O3 (where x=0.05, 0.25, 0.5, and 1 in wt%) were synthesized by melt quenching technique. The structural and optical behaviors have been investigated through FTIR, absorption and emission spectral analysis. The UV-vis- NIR absorption spectra were used to calculate the bonding parameters (β ¯, δ), Judd-Ofelt intensity parameters (Ωλ, λ = 2, 4 and 6), Optical band gap and Urbach's energy of the prepared glasses. The radiative properties such as transition probability (AR), stimulated emission cross-section (σPE ), branching ratios (βR) were calculated from the luminescence spectra. The optical properties of the prepared glasses with varying Er3+ ion concentration have been studied and reported in the present work.

  4. Frequency upconversion in Er3+ doped tungsten tellurite glass containing Ag nanoparticles

    Science.gov (United States)

    Mahajan, S. K.; Parashar, J.

    2018-05-01

    The frequency upconversion emission in Er3+ doped TeO2-WO3-Li2O containing Ag nanoparticle (TWLEOAG) glasses at 980nm excitation is reported. The absorption spectra reveal not only the peaks due to Er3+ ions, but also the surface plasmon resonance band of silver NPs located around 525nm and 650 nm. The spherical AgNPs with average size ˜38 nm in the glassy matrix is evidenced from the TEM measurement. Under 980nm laser excitation upconversion emission spectra show two major emission at 550nm and 638nm originating from 4S3/2 and 4F9/2 energy levels of the Er3+ ions, respectively was observed. Upconversion emission enhancement factor 7 fold has been measured for sample heat treated during 40h. However for 18h heat treated TWLEOAG sample under 980 nm flash lamp excitation produced Intense green compare to red emission. Since the 980nm frequency is far from the AgNPs surface plasmon resonance frequency, visible emission ehancement is attributed to local field increase in proximity of the Ag NPs and not energy tranfer from NPs to emitters. Possible energy transfer upconversion mechanism has been also discussed.

  5. Structural and optical investigation in Er3+ doped Y2MoO6 phosphors

    Science.gov (United States)

    Mondal, Manisha; Rai, Vineet Kumar

    2018-05-01

    The Er3+ doped Y2MoO6 phosphors have been structurally and optically characterized by X-ray Diffraction (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis absorption spectroscopy and frequency upconversion (UC) emission studies. The crystal and the particles size are found to be ˜ 85 nm and ˜ 200 nm from XRD and FESEM analysis. The intense peak at ˜ 206 nm in the UV-Vis absorption spectroscopy is attributed due to the charge transfer transition between the Mo6+ and the O2- ions in the MoO4 group in the host molybdate. The frequency UC emission studies of the prepared phosphors under 980 nm diode laser excitation shows the intense UC emission in the 0.3 mol% concentrations for the Er3+ ions. In the UC emission spectra, the emission peaks at green (˜ 525 nm and ˜ 546 nm) and red (˜ 656 nm) bands are corresponding to the 2H11/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions of Er3+ ions. The mechanisms involved in the UC process have been explored with the help of energy level diagram. Moreover, the CIE point (0.31, 0.60) lie in the green colour region which indicates that the developed phosphor have suitable applications in NIR to visible upconverter and in making green light display devices.

  6. Identification of Ag and Cd photoluminescence in $^{111}$Ag-doped GaN

    CERN Document Server

    Stötzler, A; Deicher, M

    1999-01-01

    In order to unambiguously identify the chemical nature of Cd and Ag related optical transitions in GaN, epitaxial GaN layers were implanted with the radioactive isotope $^{111}$Ag which decays into stable $^{111}$Cd. This chemical transmutation was monitored by photoluminescence (PL) spectroscopy. Being an element specific property, the half-life of this decay was used to establish the chemical assignment of the optical transitions to a specific defect. We found that the Ag related transitions consist of a series of four single lines (1.610, 1.600, 1.594, and 1.573 eV), each accompanied by two phonon replicas separated by 63 meV. Cd produces two PL bands centered at 2.7 and 3.2 eV. Additional Cd-related single transitions at 3.341, 3.328, and 3.249 eV have been observed. Exponential fits to the PL intensities yield half-lives of $t_{1/2}^{Ag}$= (7.61$\\pm$0.27) d and $t_{1/2}^{Cd}$=(7.60$\\pm$0.27) d, respectively, in good agreement with the half-life of $^{111}$Ag of 7.45 d. (13 refs).

  7. NIR to VIS frequency upconversion luminescence properties of Er{sup 3+}-doped YPO{sub 4} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Balakrishnaiah, R. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of); Kim, Dong Woo [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yi, Soung Soo, E-mail: ssyi@silla.ac.k [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Kim, Sung Hoon [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan 617-736 (Korea, Republic of); Jang, Kiwan; Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Moon, Byung Kee; Jeong, Jung Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2010-09-01

    Different concentrations of Er{sup 3+}-doped YPO{sub 4}:Er powder phosphors have been synthesized by the conventional solid state reaction method and are characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FESEM), and upconversion emission measurements. An intense red emission band and a weak green emission band are observed under NIR excitation at 975 nm in case of samples with high dopant concentration while no upconversion emission was observed at lower Er{sup 3+} ion concentrations. The possible mechanisms involved in the upconversion process have been discussed in comparison to results with similar reported works.

  8. Investigation on Er{sup 3+}/Ho{sup 3+} co-doped silicate glass for ~2 µm fiber lasers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xueqiang; Huang, Feifei; Cheng, Jimeng; Fan, Xiaokang; Gao, Song [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Graduate School of Chinese Academy of Science, Beijing 100039 (China); Zhang, Junjie [College of Materials Science and Technology, China Jiliang University, Hangzhou 310018 (China); Hu, Lili [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Chen, Danping, E-mail: dpchen2008@aliyun.com [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2015-06-15

    A stable Er{sup 3+}/Ho{sup 3+} co-doped lead silicate glass is developed. Luminescent properties are recorded under pumping with 808 and 1550 nm lasers. Energy-transfer mechanism and efficiency are analyzed. Energy-transfer efficiency from Er{sup 3+}:{sup 4}I{sub 13/2} to Ho{sup 3+}:{sup 5}I{sub 7} reaches 93.8% at 3 mol% Ho{sub 2}O{sub 3} doping concentration. Strong luminescence is detected when pumped at 1550 nm because of efficient energy transfer from Er{sup 3+}:{sup 4}I{sub 13/2} to Ho{sup 3+}:{sup 5}I{sub 7}. Peak gain coefficient at 2056 nm is detected as 1.62 cm{sup −1}. The excellent luminescent property and high stability indicate that Er{sup 3+}/Ho{sup 3+} co-doped lead silicate glass can be applied in 2 µm fiber lasers. - Highlights: • Er{sup 3+}/Ho{sup 3+} co-doped silicate glasses with high stability are prepared. • Strong luminescence is detected under pump of 1550 nm lasers owing to efficient energy transfer from Er{sup 3+} to Ho{sup 3+}. • Transfer efficiency is calculated to be 93.8% when Ho{sub 2}O{sub 3} doping concentration is up to 3 mol%. • Gain coefficient peaks at 2056 nm to be 1.62 cm{sup −1}.

  9. Crystal growth and scintillation properties of Er-doped Lu3Al5O12 single crystals

    International Nuclear Information System (INIS)

    Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira

    2012-01-01

    Er-doped Lu 3 Al 5 O 12 (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down (μ-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under 241 Am α-ray excitation indicated host emission at approximately 350 nm and Er 3+ 4f-4f emissions. According to the pulse height spectra recorded under γ-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The γ-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 μs and 6-10 μs).

  10. Co-operative energy transfer in Yb3+-Er3+ co-doped SrGdxOy upconverting phosphor

    Science.gov (United States)

    Kumar, Ashwini; Pathak, Trilok K.; Dhoble, S. J.; . Terblans, J. J.; Swart, H. C.

    2018-04-01

    Upconversion nanoparticles (UCNPs) have shown considerable interest in many fields; however, low upconversion efficiency of UCNPs is still the most severe limitation of their applications. Yb3+ and Er3+ co-doped SrGd4O7/Gd2O3(SGO) upconversion (UC) phosphors were synthesized by a modified co-precipitation process. The UC properties were investigated by direct excitation with a 980 nm laser. It was observed that the as prepared materials showed relatively strong green emission, while upon the incorporation of the Er3+ ion, there was an increase in the upconversion luminescence intensity for the red component. The effect of different doping concentration of Er3+on the emission spectra and X-ray diffraction patterns of the UC materials have also been studied. The luminescence lifetimes and Commission Internationale de L'Eclairage coordinates for these as prepared samples were determined to understand the energy transfer (ET) mechanisms occurring between Yb3+ and Er3+ in the SGO host matrix. The UC luminescence intensity as a function of laser pump power was monitored and it was confirmed that the UC process in SGO:Yb3+/Er3+is a two-photon absorption process. The findings reported here are expected to provide a better approach for understanding of the ET mechanisms in the oxide based Yb3+/Er3+ co-doped UC phosphors. This study might be helpful in precisely defined applications where optical transitions are essential criterion and this can be easily achieved by smart tuning of the emission properties of Yb3+/Er3+ co-doped UC phosphors.

  11. Synthesis and characterization of a liquid Eu precursor (EuCp{sup pm}{sub 2}) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Brandon, E-mail: bmitchell@wcupa.edu [Department of Physics, West Chester University, West Chester, PA, 19383 (United States); Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Koizumi, Atsushi; Nunokawa, Takumi; Wakamatsu, Ryuta; Lee, Dong-gun; Saitoh, Yasuhisa; Timmerman, Dolf [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Kuboshima, Yoshinori; Mogi, Takayuki; Higashi, Shintaro; Kikukawa, Kaoru [Kojundo Chemical Laboratory Co., Ltd., 5-1-28 Chiyoda, Sakado, Saitama, 350-0284 (Japan); Ofuchi, Hironori; Honma, Tetsuo [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198 (Japan); Fujiwara, Yasufumi, E-mail: fujiwara@mat.eng.osaka-u.ac.jp [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan)

    2017-06-01

    A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu{sup 2+} to Eu{sup 3+} could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. - Highlights: • A liquid Eu precursor was synthesized and its properties were characterized. • Precursor has a low melting point and a moderately high vapor pressure. • Does not contain oxygen in its molecular structure. • Eu can changed its valance state when incorporated into GaN. • Valence state of Eu in GaN can be controlled by donor doping.

  12. Synthesis and characterization of a liquid Eu precursor (EuCppm2) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Mitchell, Brandon; Koizumi, Atsushi; Nunokawa, Takumi; Wakamatsu, Ryuta; Lee, Dong-gun; Saitoh, Yasuhisa; Timmerman, Dolf; Kuboshima, Yoshinori; Mogi, Takayuki; Higashi, Shintaro; Kikukawa, Kaoru; Ofuchi, Hironori; Honma, Tetsuo; Fujiwara, Yasufumi

    2017-01-01

    A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu 2+ to Eu 3+ could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. - Highlights: • A liquid Eu precursor was synthesized and its properties were characterized. • Precursor has a low melting point and a moderately high vapor pressure. • Does not contain oxygen in its molecular structure. • Eu can changed its valance state when incorporated into GaN. • Valence state of Eu in GaN can be controlled by donor doping.

  13. Spectral-converting behaviors of Er{sup 3+} and Er{sup 3+}–Yb{sup 3+} doped YOCl phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sangmoon, E-mail: spark@silla.ac.kr [Center for Green Fusion Technology and Department of Engineering in Energy and Applied Chemistry, Silla University, Busan 617-736 (Korea, Republic of); Cho, So-Hye [Center for Materials Architecturing, Institute of Multidisciplinary Convergence of Materials, Korea Institute of Science and Technology, Seoul 130-650 (Korea, Republic of)

    2014-01-25

    Highlights: • Luminescent materials of YOCl:Er,Yb were prepared using NH{sub 4}Cl flux. • Interesting spectral-converting behaviors were observed in the phosphors. • 980 or 1550 nm diode laser was irradiated for up-converting study. • A multi-photon process in the phosphors was calculated. -- Abstract: Luminescent materials composed of Y{sub 1−m−n}Er{sub m}Yb{sub n}OCl (m = 0.001–0.1, n = 0.005–0.1) were prepared via a solid-state reaction using NH{sub 4}Cl flux. Photoluminescence spectra, the dependence of the luminescent intensity as a function of Er{sup 3+} content, and their CIE coordinates of the Er{sup 3+}-doped layered YOCl compounds were also investigated under near-ultraviolet (NUV) and visible lights. The spectral up-converting properties of Er{sup 3+} and Er{sup 3+}–Yb{sup 3+} in YOCl phosphors were elucidated under 980 and 1550 nm diode laser irradiations. This up-conversion emission spectra and the pump power dependence versus emission intensity observed in the Y{sub 0.9}Er{sub 0.1}OCl up-conversion phosphors gave rise to one- and two-photon processes. The up-conversion mechanism of Er{sup 3+} and Yb{sup 3+} ions in YOCl was described by a schematic energy-level diagram. Through the use of these up-conversion luminescent materials, the desired emitting lights throughout the orange and red regions of the spectra were achieved.

  14. Emission spectra from AlN and GaN doped with rare earth elements

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

    2006-01-01

    Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

  15. Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

    Energy Technology Data Exchange (ETDEWEB)

    Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

    2011-07-01

    A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

  16. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

    2007-04-23

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

  17. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    International Nuclear Information System (INIS)

    Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

    2007-01-01

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

  18. Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

    Science.gov (United States)

    Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

    2018-05-01

    In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

  19. Emission properties of polymer composites doped with Er3+:Y2O3 nanopowders

    Science.gov (United States)

    Anders, Krzysztof; Jusza, Anna; Baran, Magdalena; Lipińska, Ludwika; Piramidowicz, Ryszard

    2012-10-01

    In this work we report the recent results of our investigation on visible emission properties of the PMMA-based polymer nanocomposites doped with Er3+:Y2O3 nanopowders. The set of active nanopowders, and polymer films, differing in active ions concentration, was characterized with respect of their luminescent properties in the green spectral range, available to a limited extent for semiconductor lasers. In particular - the concentration dependent emission spectra and fluorescence dynamics profiles were measured under direct (single photon) and up-converted excitation, enabling the comparison of luminescent properties of developed nanocomposite materials and original nanopowders, optimization of erbium dopant concentration as well as discussion of excitation mechanisms and analysis of the efficiency of depopulation processes.

  20. Sensitivity Enhancement of Biochemical Sensors Based on Er+3 Doped Microsphere Coupled to an External Mirror

    Directory of Open Access Journals (Sweden)

    Alireza BAHRAMPOUR

    2010-09-01

    Full Text Available In this paper we proposed an active optical sensor designed based on the Er+3-doped microsphere coupled to an external mirror. The microsphere-mirror coupling causes the degeneracy splitting of the resonance frequencies. Each of resonance frequencies splits in to two different resonance frequencies .The coupling coefficient changes as a result of altering the refractive index of surrounding medium. So, the presence of bio/chemical analytes can be detected by measuring the change of laser output power, laser frequency or the difference between frequencies of the red and blue shifted modes. In the presence of mirror at least one order of magnitude sensitivity enhancement is obtained relative to the active microsphere biochemical sensors.

  1. Study of upconversion fluorescence property of novel Er3+/Yb3+ co-doped tellurite glasses.

    Science.gov (United States)

    Xu, Tie-Feng; Li, Guang-Po; Nie, Qiu-Hua; Shen, Xiang

    2006-06-01

    Er3+/Yb3+ co-doped TeO2-B2O3-Nb2O5-ZnO (TBN) glasses were prepared. The absorption spectra and upconversion luminescence spectra of TBN glasses were measured and analyzed. The upconversion emission bands centered at 530, 546 and 658 nm were observed under the excitation at 975 nm, corresponding to the transitions of 2H11/2-->4I15/2, 4S3/2-->4I15/2 and 4F9/2-->4I15/2 respectively. The ratio of red emission to green emission increases with an increasing of Yb3+ ions concentration. According to the quadratic dependence on excitation power, the possible upconversion mechanisms and processes were discussed.

  2. Fluorescence of Er3+ doped La2S3.3Ga2S3 glasses

    International Nuclear Information System (INIS)

    Reisfeld, R.; Bornstein, A.

    1978-01-01

    In this paper the authors report the preparation and fluorescence of Er 3+ in chalcogenide glasses. In the oxide glasses it has been shown that the multiphonon transition rates of the RE are independent of the coupling between a given oxide glass and rare earth ion, but dependent exponentially on the number of phonons of highest energy bridging the emitting and next-lower level. It is of interest to establish whether changing the glass matrix will affect the amount of electron phonon coupling. In addition, because of their low phonon energy and high refractive index, the RE doped chalcogenide glasses will form a new type of fluorescent material. This may be of interest in new RE lasers. (Auth.)

  3. Synthesis of Er(III)/Yb(III)-doped BiF3 upconversion nanoparticles for use in optical thermometry.

    Science.gov (United States)

    Du, Peng; Yu, Jae Su

    2018-03-23

    The authors describe an ethylene glycol assisted precipitation method for synthesis of Er(III)/Yb(III)-doped BiF 3 nanoparticles (NPs) at room temperature. Under 980-nm light irradiation, the NPs emit upconversion (UC) emission of Er(III) ions as a result of a two-photon absorption process. The temperature-dependent green emissions (peaking at 525 and 545 nm) are used to establish an unambiguous relationship between the ratio of fluorescence intensities and temperature. The NPs have a maximum sensitivity of 6.5 × 10 -3  K -1 at 619 K and can be applied over the 291-691 K temperature range. The results indicate that these NPs are a promising candidate for optical thermometry. Graphical abstract Schematic of the room-temperature preparation of Er(III)/Yb(III)-doped BiF 3 nanoparticles with strongly temperature-dependent upconversion emission.

  4. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, Miroslav; Mikulics, M.; Sofer, Z.

    2015-01-01

    Roč. 164, Aug (2015), 108-114 ISSN 0254-0584 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * menitrides * nanostructures * magnetic properties * chemical synthesis * semiconductors Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

  5. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  6. Local microstructure and photoluminescence of Er-doped 12CaO·7Al2O3 powder

    Institute of Scientific and Technical Information of China (English)

    WANG Dan; LIU Yuxue; XU Changshan; LIU Yichun; WANG Guorui; LI Xinghua

    2008-01-01

    Er-doped 12CaO·7Al2O3 (C12A7:Er) powders were prepared using the sol-gel method followed by annealing inorganic precursors. X-ray diffraction (XRD), Raman and absorption spectra revealed that Er ions existed and substituted Ca2+ lattice site in C12A7. The photoluminescence of C12A7:Er at room temperature was observed in the visible and infrared region using 488 nm (2.54 eV) Ar+ line as excitation source, respectively. The sharp and intense green emission bands with multi-peaks around 520 nm and 550 nm correspond to the transitions from the excited states 2H11/2 and 4S3/2 to the ground state 4I15/2, respectively. Furthermore, red emission band around 650 nm was also observed. It was attributed to the electronic transition from excited states 4F9/2 to the ground state 4I15/2 inside 4f-shell of Er3+ ions. The intensive infrared emission at 1.54μm was attributed to the transition from the first excited states of 4I13/2 to the ground state (4I15/2). The temperature dependent photoluminescence of infrared emission showed that the integrated intensity reached a maximum value at near room temperature. The forbidden transitions of intra-4f shell electrons in free Er3+ ions were allowed in C12A7 owing to lack of the inversion symmetry in the Er3+ position in C12A7 crystal field. Our results suggested that C12A7:Er was a candidate for applications in Er-doped laser materials, and full color display.

  7. Photoluminescence study of Er-doped zinc–sodium–antimonite glasses

    Energy Technology Data Exchange (ETDEWEB)

    Zavadil, J., E-mail: zavadil@ufe.cz [Institute of Photonics and Electronics AS CR, Prague (Czech Republic); Ivanova, Z.G. [Institute of Solid State Physics Bulgarian Academy of Sciences, Sofia (Bulgaria); Kostka, P. [Institute of Rock Structure and Mechanics AS CR, Prague (Czech Republic); Hamzaoui, M.; Soltani, M.T. [Laboratoire de Physique Photonique et Nanomatériaux, Universite de Biskra (Algeria)

    2014-10-25

    Highlights: • Optical gap found at around 3.1 eV and its compositional tendency was deduced. • Emission spectra are overwhelmed by narrow 4f–4f emission bands of Er{sup 3+}. • Fine structure of emission bands at 980 and 1530 nm measured at 300 and 4 K. • Schematic energy diagram of Stark levels for 3 lowest manifolds of Er{sup 3+} is proposed. • A nature of temperature broadening of 4f–4f PL bands was discussed. - Abstract: Bulk samples of Er-doped zinc–sodium–antimonite glasses have been investigated by transmission and photoluminescence (PL) spectroscopy. Two series of compositions, (Sb{sub 2}O{sub 3}){sub 90−x}(Na{sub 2}O){sub 10}(ZnO){sub x} and (Sb{sub 2}O{sub 3}){sub 80−x}(Na{sub 2}O){sub 20}(ZnO){sub x}, doped with 0.25 mol% Er{sub 2}O{sub 3}, have been chosen for this study. Transmission spectra exhibit sharp absorption bands centred at 450, 489, 521, 545, 652, 795, 975 and 1530 nm, which correspond to absorption of Er{sup 3+} ions and they are attributed to the optical transitions from the ground state {sup 4}I{sub 15/2} to the excited states {sup 4}F{sub 5/2}, {sup 4}F{sub 7/2}, {sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, {sup 4}F{sub 9/2}, {sup 4}I{sub 9/2}, {sup 4}I{sub 11/2} and {sup 4}I{sub 13/2}, respectively. The optical gap has been found to vary from 3.09 to 3.15 eV with a tendency to decrease at higher Na{sub 2}O and/or ZnO contents. Four extrinsic bands due to OH{sup −}, Si–O, CO{sub 2}, and (CO{sub 3}){sup 2−} carbonate group vibrations have been identified in the infrared region. Emission spectra are overwhelmed by narrow 4f–4f emission bands. Fine structure of emission bands at 980 and 1530 nm, corresponding to radiative transitions from two lowest excited states of Er{sup 3+} ions to the ground state manifold have been investigated at room temperature and at 4 K. A schematic energy diagram of Stark levels splitting for the three lowest manifolds {sup 4}I{sub 11/2}, {sup 4}I{sub 13/2} and {sup 4}I{sub 15/2} has been

  8. UV light-induced thermoluminescence of Er + Li doped ZrO2

    International Nuclear Information System (INIS)

    Hristov, H; Arhangelova, N; Velev, V; Penev, I; Bello, M; Moschini, G; Uzunov, N

    2010-01-01

    Analysis of the thermoluminescence (TL) properties of ZrO 2 doped with Eu and Li has been conducted. Different quantities of lithium co-dopant have been added as Li 2 CO 3 to a mixture of ZrO 2 with 1wt% Er. Pellets sintered at a temperature of 1200 0 C have been prepared and the kinetic parameters of the phosphors have been studied after irradiation with UV light. It has been shown that the addition of 8 to 10 wt% of Li to the mixture of ZrO 2 with 1wt% Er yields a maximum intensity of the peaks at 65 0 C and at 105 0 C. Spectral emission and spectral sensitivity of the phosphors have been studied. The analysis applied to TL glow curves, obtained from the UV irradiated phosphors and kept after the irradiation at different times in a dark storage, revealed that the peaks at 65 0 C and 105 0 C have relatively long fading. It is concluded that the phosphors thus obtained possess a good sensitivity to the UV emission and could be appropriate phosphors for detection and quantitative measurements of UV light.

  9. Photoluminescence properties of Er{sup 3+}-doped alkaline earth titanium phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Murthy, D.V.R.; Babu, A. Mohan [Department of Physics, Sri Venkateswara University, Tirupati 517 502 (India); Jamalaiah, B.C. [Department of Physics, Sree Vidyanikethan Engineering College, Tirupati, 517 102 (India); Moorthy, L. Rama, E-mail: lrmphysics@yahoo.co.i [Department of Physics, Sri Venkateswara University, Tirupati 517 502 (India); Jayasimhadri, M.; Jang, Kiwan; Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo [Department of Photonics, Silla University, Pusan 617-736 (Korea, Republic of); Jeong, Jung Hyun [Department of Physics, Pukyong National University, Pusan 608-737 (Korea, Republic of)

    2010-02-18

    Er{sup 3+}-doped alkaline earth titanium phosphate (RTP) glasses with molar composition of 24 (NaPO{sub 3}){sub 6} + 30 KH{sub 2}PO{sub 4} + 25 TiO{sub 2} + 20 RCl{sub 2} + 1 Er{sub 2}O{sub 3} were prepared by melt quenching technique. Judd-Ofelt intensity parameters ({Omega}{sub 2,4,6}) were determined from the experimental oscillator strengths (f{sub exp}) of absorption bands. From these parameters spontaneous emission probabilities (A{sub R}), luminescence branching ratios ({beta}{sub R}) and radiative lifetimes ({tau}{sub R}) have been calculated. Visible and near infrared photoluminescence spectra has been recorded by exciting the samples at 380 and 970 nm respectively. An intense broad emission band at 1.53 {mu}m was observed corresponding to {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition. McCumber theory has been applied to determine the emission cross-sections ({sigma}{sub e}) of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition using the absorption cross-sections ({sigma}{sub a}). The lifetimes of {sup 4}S{sub 3/2} level were measured for the glasses by exciting the samples at 540 nm wavelength and the quantum efficiencies were also determined.

  10. 1.54 μm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode

    International Nuclear Information System (INIS)

    Zhao, W Q; Wang, P F; Ran, G Z; Ma, G L; Zhang, B R; Liu, W M; Wu, S K; Dai, L; Qin, G G

    2006-01-01

    By doping an erbium complex, erbium (III) 2, 4-pentanedionate (Er(acac) 3 ), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO 2 /NPB/ALQ/ ALQ:Er(acac) 3 /ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 μm emission from Er 3+ is observed. The impact of doping level of Er(acac) 3 in ALQ on 1.54 μm electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac) 3 to ALQ is found at 1:60. A competitive EL mechanism from the ALQ and Er(acac) 3 is found and the Er 3+ ions excitations are attributed to energy transfer from the ligands to Er ions

  11. Biocompatible Er, Yb co-doped fluoroapatite upconversion nanoparticles for imaging applications

    Science.gov (United States)

    Anjana, R.; K. M., Kurias; M. K., Jayaraj

    2017-08-01

    Upconversion luminescence, visible emission on infra red (IR) excitation was achieved in a biocompatible material, fluoroapatite. Fluoroapatite crystals are well known biomaterials, which is a component of tooth enamel. Also it can be considered as an excellent host material for lanthanide doping since the ionic radii of lanthanide is similar to that of calcium ion(Ca2+) hence successful incorporation of dopants within the lattice is possible. Erbium (Er), Ytterbium (Yb) co-doped fluorapatite (FAp) nanoparticles were prepared by precipitation method. The particles show intense visible emission when excited with 980 nm laser. Since upconversion luminescence is a multiphoton process the excitation power dependence on emission will give number of photons involved in the emission of single photon. Excitation power dependence studies show that two photons are involved in the emission of single photons. The value of slope was different for different emission peak because of the difference in intermediate energy level involved. The crystal structure and morphology of the particle were determined using X-ray diffractometer (XRD) and field emission scanning electron microscope (FESEM). These particles with surface functionalisation can be used for live cell imaging.

  12. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    Science.gov (United States)

    2015-03-30

    Technology and Physics of MBE. Plenum, New York. (1985) p.38 5. Shawn D. Burnham, Improved Understanding And Control Of Magnesium -Doped Gallium Nitride By...range in order to minimize Mg self-compensation or other kind of defects. The other straightforward method is to increase the magnesium concentration...tested using NaOH etching 22. The surface is resistant to the etching indicating that no polarity inversion occurs during the growth, even though Mg

  13. Photoelectrochemical reduction of carbon dioxide using Ge doped GaN nanowire photoanodes

    Directory of Open Access Journals (Sweden)

    Yichen Wang

    2015-11-01

    Full Text Available We report on the direct conversion of carbon dioxide (CO2 in a photoelectrochemical cell consisting of germanium doped gallium nitride nanowire anode and copper (Cu cathode. Various products including methane (CH4, carbon monoxide (CO, and formic acid (HCOOH were observed under light illumination. A Faradaic efficiency of ∼10% was measured for HCOOH. Furthermore, this photoelectrochemical system showed enhanced stability for 6 h CO2 reduction reaction on low cost, large area Si substrates.

  14. Dependence of the up-conversion emission of Li+ co-doped Y2O3:Er3+ films with dopant concentration

    International Nuclear Information System (INIS)

    Meza-Rocha, A.N.; Huerta, E.F.; Caldiño, U.; Carmona-Téllez, S.; Bettinelli, M.; Speghini, A.; Pelli, S.; Righini, G.C.

    2015-01-01

    The effect of dopant concentration on the up-conversion emission, and in particular on the Er 3+ related green and red emissions of spray pyrolysis deposited films of Y 2 O 3 :Er 3+ co-doped with Li + , is reported. Er 3+ concentrations in the films in the range of 1.1–5.6 at% (1.5–14 at% Er 3+ in the spraying solution) were studied, as well as the effect of co-doping them with Li + . Large concentrations of Er 3+ favor the red emission, especially for contents higher than 10 at% in the spraying solution. Li + co-doping improves the green and red emissions up to 365 and 171 times, respectively, depending on the Er 3+ and Li + concentrations. - Highlights: Up-converting Y 2 O 3 :Er 3+ and Y 2 O 3 :Er 3+ , Li + films were deposited by spray pyrolysis. The effect of Li + co-doping on the green and red UC Er 3+ emission is reported. Li + co-doping improves the green and red emission up to 365 and 171 times

  15. Cooperative upconversion as the gain-limiting factor in Er doped miniature Al2O3 optical waveguide amplifiers

    International Nuclear Information System (INIS)

    Kik, P.G.; Polman, A.

    2003-01-01

    Erbium doped Al 2 O 3 waveguide amplifiers were fabricated using two different doping methods, namely Er ion implantation into sputter deposited Al 2 O 3 , and co-sputtering from an Er 2 O 3 /Al 2 O 3 target. Although the Er concentration in both materials is almost identical (0.28 and 0.31 at. %), the amplifiers show a completely different behavior. Upon pumping with 1.48 μm, the co-sputtered waveguide shows a strong green luminescence from the 4 S 3/2 level, indicating efficient cooperative upconversion in this material. This is confirmed by pump power dependent measurements of the optical transmission at 1.53 μm and the spontaneous emission at 1.53 and 0.98 μm. All measurements can be accurately modeled using a set of rate equations that include first order and second order cooperative upconversion. The first order cooperative upconversion coefficient C 24 is found to be 3.5x10 -16 cm 3 s -1 in the co-sputtered material, two orders of magnitude higher than the value obtained in Er implanted Al 2 O 3 of 4.1x10 -18 cm 3 s -1 . It is concluded that the co-sputtering process results in a strongly inhomogeneous atomic scale spatial distribution of the Er ions. As a result, the co-sputtered waveguides do not show optical gain, while the implanted waveguides do

  16. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Fu Chen

    2017-12-01

    Full Text Available In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD. We have observed that the growth of GaN nucleation layers (NLs under N2 ambient leads to a large full width at half maximum (FWHM of (102 X-ray diffraction (XRD line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

  17. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Chen, Fu; Sun, Shichuang; Deng, Xuguang; Fu, Kai; Yu, Guohao; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

  18. Experimental demonstration of an Er-doped fiber ring laser mode-locked with a Tm–Ho co-doped fiber saturable absorber

    International Nuclear Information System (INIS)

    Tao, Mengmeng; Wu, Junjie; Wu, Yong; Yang, Pengling; Ye, Xisheng; Peng, Junsong

    2013-01-01

    Mode-locking operation of an Er-doped fiber laser with a Tm–Ho co-doped fiber saturable absorber is demonstrated for the first time. Q-switching, Q-switched mode-locking and CW mode-locking operation modes are observed sequentially with increase of the pump power. In the mode-locking operation mode, a repetition rate at the fundamental cavity frequency of 9.05 MHz is obtained with a pulse duration of 46.3 ns. By rotating the polarization controller, a repetition rate up to 887 MHz is achieved, and the pulse duration is shortened to 0.548 ns. (paper)

  19. Structural and luminescence behavior of Er(3+) ions doped Barium tellurofluoroborate glasses.

    Science.gov (United States)

    Annapoorani, K; Maheshvaran, K; Arunkumar, S; Suriya Murthy, N; Marimuthu, K

    2015-01-25

    Er(3+) doped Barium tellurofluoroborate glasses (BTFBxE) with the chemical composition (30-x)TeO2+30B2O3+20BaO+20BaF+xEr2O3 (where x=0.01, 0.05, 0.1, 0.5, 1.0 and 2.0 in wt%) were prepared following the melt quenching technique. The different vibrational modes of borates and tellurites in the prepared glasses were explored through FTIR and Raman spectra. The optical absorption spectra have been used to determine the ionic/covalent nature of the metal-ligand bond in the prepared glasses with the help of Nephelauxetic ratio (β) and bonding parameter (δ) studies. The optical band gap of direct and indirect allowed transitions were determined from Tauc's plot and the variations of band gap energy with structural arrangements were discussed. The Urbach energy values were determined and the relatively lower values of the Urbach's energy reveal the minimal degree of disorderness in the prepared glasses. The oscillator strengths (fexp and fcal) and Judd-Ofelt (JO) intensity parameters (Ω2, Ω4 and Ω6) were calculated with the application of JO theory and the trends of the JO intensity parameters are found to be Ω2>Ω6>Ω4 for all the prepared glasses with a minimum variation in Ω2 intensity parameter values. A bright green emission was observed from the (2)H11/2+(4)S3/2→ (4)I15/2 transition and the radiative properties such as transition probability (A), stimulated emission cross-section (σP(E)), branching ratio (βr) and radiative lifetime (τ) were calculated using the JO parameters. The suitability of the prepared glasses for the fabrication of photonic devices were also discussed and reported in the present work. Copyright © 2014 Elsevier B.V. All rights reserved.

  20. Modifying the size and uniformity of upconversion Yb/Er:NaGdF4 nanocrystals through alkaline-earth doping.

    Science.gov (United States)

    Lei, Lei; Chen, Daqin; Huang, Ping; Xu, Ju; Zhang, Rui; Wang, Yuansheng

    2013-11-21

    NaGdF4 is regarded as an ideal upconversion (UC) host material for lanthanide (Ln(3+)) activators because of its unique crystal structure, high Ln(3+) solubility, low phonon energy and high photochemical stability, and Ln(3+)-doped NaGdF4 UC nanocrystals (NCs) have been widely investigated as bio-imaging and magnetic resonance imaging agents recently. To realize their practical applications, controlling the size and uniformity of the monodisperse Ln(3+)-doped NaGdF4 UC NCs is highly desired. Unlike the routine routes by finely adjusting the multiple experimental parameters, herein we provide a facile and straightforward strategy to modify the size and uniformity of NaGdF4 NCs via alkaline-earth doping for the first time. With the increase of alkaline-earth doping content, the size of NaGdF4 NCs increases gradually, while the size-uniformity is still retained. We attribute this "focusing" of size distribution to the diffusion controlled growth of NaGdF4 NCs induced by alkaline-earth doping. Importantly, adopting the Ca(2+)-doped Yb/Er:NaGdF4 NCs as cores, the complete Ca/Yb/Er:NaGdF4@NaYF4 core-shell particles with excellent size-uniformity can be easily achieved. However, when taking the Yb/Er:NaGdF4 NCs without Ca(2+) doping as cores, they could not be perfectly covered by NaYF4 shells, and the obtained products are non-uniform in size. As a result, the UC emission intensity of the complete core-shell NCs increases by about 30 times in comparison with that of the cores, owing to the effective surface passivation of the Ca(2+)-doped cores and therefore protection of Er(3+) in the cores from the non-radiative decay caused by surface defects, whereas the UC intensity of the incomplete core-shell NCs is enhanced by only 3 times.

  1. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  2. New Er{sup 3+} doped antimony oxide based glasses: Thermal analysis, structural and spectral properties

    Energy Technology Data Exchange (ETDEWEB)

    Ouannes, K. [Faculté des Sciences et de la Technologie, Université de Biskra, BP 145 RP, 07000, Biskra (Algeria); Lebbou, K., E-mail: kheirreddine.lebbou@univ-lyon1.fr [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622, Villeurbanne (France); Walsh, Brian-M. [NASA Langley Research Center, Hampton, VA, 23681 (United States); Poulain, M. [UMR 6226- Verres et Céramiques – Campus de Beaulieu, Université de Rennes1, 35042, Rennes (France); Alombert-Goget, G.; Guyot, Y. [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622, Villeurbanne (France)

    2015-11-15

    The novel oxide glass compositions based on Sb{sub 2}O{sub 3} are elaborated and characterized, in the system (90-X)Sb{sub 2}O{sub 3}–10Na{sub 2}O–XBi{sub 2}O{sub 3} (SNB). We are interested in bismuth rates incorporated into the glass, its effect on the different physical properties that have been measured, and especially, in radiative and spectroscopic properties of erbium doped SNB glasses. Differential scanning calorimeter (DSC) measurements show an improvement of the stability factor,ΔT, of the glasses, which can indicate a reinforcement of the network. Both FTIR and Raman spectra have also been considered in terms of bismuth influence. As a function of composition, we have principally measured optical absorption, visible and infrared emission, and lifetime. The Judd–Ofelt parameters measured from the absorption spectra have been used to calculate the radiative lifetime (τ{sub r}) and the stimulated emission cross section. The spectroscopic quality factor χ = Ω{sub 4}/Ω{sub 6} = 0.73, low phonon energy of ∼600–700 cm{sup −1}, a reduced quenching effect, and a high quantum efficiency of 90% for the 1.53 μm measured emission, by pumping at 980 nm, are in favor of promising laser applications. - Highlights: • Glass belonging to Er-doped Sb{sub 2}O{sub 3}–Na{sub 2}O–Bi{sub 2}O{sub 3} (SNB) system are elaborated and characterized. • The intensity parameters Ωt were obtained via the Judd–Ofelt theory. • The optical properties were studied as a function of glass composition.

  3. Cladding-pumped 70-kW-peak-power 2-ns-pulse Er-doped fiber amplifier

    Science.gov (United States)

    Khudyakov, M. M.; Bubnov, M. M.; Senatorov, A. K.; Lipatov, D. S.; Guryanov, A. N.; Rybaltovsky, A. A.; Butov, O. V.; Kotov, L. V.; Likhachev, M. E.

    2018-02-01

    An all-fiber pulsed erbium laser with pulse width of 2.4 ns working in a MOPA configuration has been created. Cladding pumped double clad erbium doped large mode area fiber was used in the final stage amplifier. Peculiarity of the current work is utilization of custom-made multimode diode wavelength stabilized at 981+/-0.5 nm - wavelength of maximum absorption by Er ions. It allowed us to shorten Er-doped fiber down to 1.7 m and keep a reasonably high pump-to signal conversion efficiency of 8.4%. The record output peak power for all-fiber amplifiers of 84 kW was achieved within 1555.9+/-0.15 nm spectral range.

  4. Upconversion and pump saturation mechanisms in Er3+/Yb3+ co-doped Y2Ti2O7 nanocrystals

    International Nuclear Information System (INIS)

    Wang, Fengxiao; Song, Feng; Zhang, Gong; Han, Yingdong; Li, Qiong; Tian, Jianguo; Ming, Chengguo

    2014-01-01

    The Er 3+ /Yb 3+ co-doped Y 2 Ti 2 O 7 nanocrystals were synthesized by the sol–gel method. X-ray diffraction, transmission electronic microscopy, and photoluminescence spectra were measured to verify the Y 2 Ti 2 O 7 nanocrystalline produced in the sample annealed at 800 °C. The anomalous slopes of the fitted line in the log-log plots for upconversion emissions and the pump-saturation effect of near-infrared emission were observed in the nanocrystalline samples. A theoretical model of practical Er 3+ /Yb 3+ co-doped system based on the rate equations were put forward and explained the experimental phenomena well

  5. Analysis of structure origin and luminescence properties of Yb(3+)-Er(3+) co-doped fluorophosphate glass.

    Science.gov (United States)

    Chen, Fangze; Jing, Xufeng; Wei, Tao; Wang, Fengchao; Tian, Ying; Xu, Shiqing

    2014-08-14

    The near infrared luminescence properties of Yb(3+)-Er(3+) co-doped fluorophosphate glasses have been investigated. The various effects on structure and 1.53 μm emission were analyzed as a function of Yb(3+) concentration. The energy transfer mechanism was proposed. High measured lifetime (10.75 ms), large effective full widths at half maximum (73.71 nm) and large gain per unit length (62.8 × 10(-)(24)cm(2)s) have been achieved in prepared glass. The present glass co-doped with 6mol% YbF3 and 2 mol% ErF3 showed magnificent luminescence properties for telecommunication application. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  7. High multi-photon visible upconversion emissions of Er3+ singly doped BiOCl microcrystals: A photon avalanche of Er3+ induced by 980 nm excitation

    International Nuclear Information System (INIS)

    Li, Yongjin; Song, Zhiguo; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi

    2013-01-01

    Under 980 nm excitation, high multi-photon upconversion (UC) emission from the 2 H 11/2 / 4 S 3/2 (green) and 4 F 9/2 (red) levels of Er 3+ ions were observed from Er 3+ singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er 3+ ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er 3+ ions doping

  8. High multi-photon visible upconversion emissions of Er{sup 3+} singly doped BiOCl microcrystals: A photon avalanche of Er{sup 3+} induced by 980 nm excitation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yongjin; Song, Zhiguo, E-mail: songzg@kmust.edu.cn; Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2013-12-02

    Under 980 nm excitation, high multi-photon upconversion (UC) emission from the {sup 2}H{sub 11/2}/{sup 4}S{sub 3/2} (green) and {sup 4}F{sub 9/2} (red) levels of Er{sup 3+} ions were observed from Er{sup 3+} singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er{sup 3+} ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er{sup 3+} ions doping.

  9. Designed Er(3+)-singly doped NaYF4 with double excitation bands for simultaneous deep macroscopic and microscopic upconverting bioimaging.

    Science.gov (United States)

    Wen, Xuanyuan; Wang, Baoju; Wu, Ruitao; Li, Nana; He, Sailing; Zhan, Qiuqiang

    2016-06-01

    Simultaneous deep macroscopic imaging and microscopic imaging is in urgent demand, but is challenging to achieve experimentally due to the lack of proper fluorescent probes. Herein, we have designed and successfully synthesized simplex Er(3+)-doped upconversion nanoparticles (UCNPs) with double excitation bands for simultaneous deep macroscopic and microscopic imaging. The material structure and the excitation wavelength of Er(3+)-singly doped UCNPs were further optimized to enhance the upconversion emission efficiency. After optimization, we found that NaYF4:30%Er(3+)@NaYF4:2%Er(3+) could simultaneously achieve efficient two-photon excitation (2PE) macroscopic tissue imaging and three-photon excitation (3PE) deep microscopic when excited by 808 nm continuous wave (CW) and 1480 nm CW lasers, respectively. In vitro cell imaging and in vivo imaging have also been implemented to demonstrate the feasibility and potential of the proposed simplex Er(3+)-doped UCNPs as bioprobe.

  10. Infrared to visible upconversion luminescence in Er3+/Yb3+ co-doped CeO2 inverse opal

    International Nuclear Information System (INIS)

    Yang, Zhengwen; Wu, Hangjun; Liao, Jiayan; Li, Wucai; Song, Zhiguo; Yang, Yong; Zhou, Dacheng; Wang, Rongfei; Qiu, Jianbei

    2013-01-01

    Highlights: • UC emission of Er 3+ was modified by introducing the structure of inverse opal. • Color tuning of CeO 2 :Yb, Er inverse opal was realized by inhibition of UC emission. • Two-photon excitation processes were observed in CeO 2 :Yb, Er inverse opal. -- Abstract: Infrared to visible upconversion luminescence has been investigated in Er 3+ /Yb 3+ co-doped CeO 2 inverse opal. Under the excitation of 980 nm diode lasers, visible emissions centered at 525, 547, 561, 660 and 680 nm are observed, which are assigned to the Er 3+ transitions of 2 H 11/2 → 4 I 15/2 (525 nm), 4 S 3/2 → 4 I 15/2 (547, 561 nm), 4 F 9/2 → 4 I 15/2 (660 and 680 nm), respectively. The effect of photonic band gap on the upconversion luminescence intensity was also obtained. Additionally, the upconversion luminescence mechanism was studied. The dependence of Er 3+ upconversion emission intensity on pump power reveals that it is a two-photon excitation process

  11. Multifunctional Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles synthesized by reverse micelle method

    OpenAIRE

    Gavrilović, Tamara V.; Jovanović, Dragana J.; Lojpur, Vesna; Dramićanin, Miroslav D.

    2014-01-01

    Synthesis of Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles in reverse micelles and their multifunctional luminescence properties are presented. Using cyclohexane, Triton X-100, and n-pentanol as the oil, surfactant, and co-surfactant, respectively, crystalline nanoparticles with ~4 nm diameter are prepared at low temperatures. The particle size assessed using transmission electron microscopy is similar to the crystallite size obtained from X-ray diffraction measurements, suggesting that each ...

  12. Submicrosecond Q-Switching Er-Doped All-Fiber Ring Laser Based on Black Phosphorus

    Directory of Open Access Journals (Sweden)

    Yao Cai

    2017-01-01

    Full Text Available Black phosphorus (BP, a new two-dimensional (2D material, has been deeply developed for extensive applications in electronics and optoelectronics due to its similar physical structure to graphene and thickness dependent direct band gap. Here, we demonstrated a submicrosecond passive Q-switching Er-doped fiber laser with BP as saturable absorber (SA. The BP saturable absorber was fabricated by mechanical exfoliation method. By taking full advantage of the ultrafast relaxation time of BP-SA and careful design of compact ring cavity, we obtained stable Q-switching pulses output with a shortest duration as narrow as 742 ns. With increasing the pump power, the pulse repetition rate accreted gradually almost linearly from 9.78 to 61.25 kHz, and the pulse duration declined rapidly at lower pump power regime and retained approximate stationary at higher pump power regime from 3.05 to 0.742 μs. The experimental results indicate that BP-SA can be an effective SA for nanosecond Q-switching pulse generation.

  13. Er3+ infrared fluorescence affected by spatial distribution synchronicity of Ba2+ and Er3+ in Er3+-doped BaO–SiO2 glasses

    Directory of Open Access Journals (Sweden)

    Atsunobu Masuno

    2016-02-01

    Full Text Available Glasses with the composition xBaO–(99.9 − xSiO2–0.1ErO3/2 (0 ≤x ≤ 34.9 were fabricated by a levitation technique. The glasses in the immiscibility region were opaque due to chemical inhomogeneity, while the other glasses were colorless and transparent. The scanning electron microscope observations and electron probe microanalysis scan profiles revealed that more Er3+ ions were preferentially distributed in the regions where more Ba2+ ions existed in the chemically inhomogeneous glasses. The synchronicity of the spatial distributions of the two ions initially increased with increasing x and then decreased when the Ba2+ concentration exceeded a certain value. The peak shape and lifetime of the fluorescence at 1.55 μm depended on x as well as the spatial distribution of both ions. These results indicate that although ErOn polyhedra are preferentially coordinated with Ba2+ ions and their local structure is affected by the coordination of Ba2+, there is a maximum in the amount of Ba2+ ions that can coordinate ErOn polyhedra since the available space for Ba2+ ions is limited. These findings provide us with efficient ways to design the chemical composition of glasses with superior Er3+ fluorescence properties for optical communication network systems.

  14. Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

    Czech Academy of Sciences Publication Activity Database

    Peřina, Vratislav; Macková, Anna; Hnatowicz, Vladimír; Prajzler, V.; Machovič, V.; Matějka, P.; Schröfel, J.

    2004-01-01

    Roč. 36, č. 8 (2004), s. 952-954 ISSN 0142-2421 R&D Projects: GA ČR GA104/03/0387 Institutional research plan: CEZ:AV0Z1048901 Keywords : Er-doped GaN * luminescence * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.209, year: 2004

  15. Spectroscopy and Device Performance of Rare Earth Doped III-Nitrides

    National Research Council Canada - National Science Library

    Hommerich, Uwe

    2002-01-01

    .... Prime candidates for redgreen- blue (RGB) emission are the rare earth ions Eu3+ (red), Er3+ (green), and Tm3+ (blue). A full-color TFEL phosphor system based on RE doped GaN has been demonstrated with high brightness...

  16. Effects of alkali ions on thermal stability and spectroscopic properties of Er{sup 3+}-doped gallogermanate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shi, D.M.; Zhao, Y.G.; Wang, X.F.; Liao, G.H. [Department of Materials Science and Engineering, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Zhao, C. [Department of Physics, South China University of Technology, Guangzhou 510641 (China); MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Peng, M.Y. [MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Zhang, Q.Y., E-mail: qyzhang@scut.edu.c [MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)

    2011-02-01

    Since information transportation capacity of optical communication network increases rapidly, new optical materials are always demanded with gain bandwidth desirably much broader than traditional erbium-doped silica fiber amplifier (EDFA). We show here in this paper the erbium-doped gallogermanate glasses with a full-width at half-maximum (FWHM) more than 50 nm. Incorporation of alkali ions such as Li{sup +}, Na{sup +}, K{sup +} into the system can on the one hand improve the thermal stability of the glasses, and on the other hand enhance the emission at 1.5 {mu}m due to the {sup 4}I{sub 13/2{yields}}{sup 4}I{sub 15/2} transition of Er{sup 3+} and suppress the upconversion process at the same time. This particularly works best for the case of K{sup +} inclusion. This work might give a general idea on controlling the Er{sup 3+} luminescence by simply adjusting the glass component and find a potential laser glass applicable to developing new broadband fiber amplifier. -- Research highlights: {yields} We report on spectroscopic properties of Er{sup 3+}-doped Ga{sub 2}O{sub 3}-GeO{sub 2}-R{sub 2}O (GGR, R=Li, Na and K) glasses for 1.53 {mu}m fiber amplifier. Effects of alkali metal ions on the thermal stability and spectroscopic properties of Er{sup 3+}-doped GGR glasses have been investigated. {yields} Incorporation of alkali ions such as Li{sup +}, Na{sup +}, K{sup +} into the system can on the one hand improve the thermal stability of the glasses, and on the other hand enhance the emission at 1.5 {mu}m due to the {sup 4}I{sub 13/2{yields}}{sup 4}I{sub 15/2} transition of Er{sup 3+} and suppress the upconversion process at the same time. This particularly works best for the case of K{sup +} inclusion. This work might give a general idea on controlling the Er{sup 3+} luminescence by simply adjusting the glass component and find a potential laser glass applicable to developing new broadband fiber amplifier.

  17. NIR to visible upconversion in Er3+/Yb3+ co-doped CaYAl3O7 phosphor obtained by solution combustion process

    International Nuclear Information System (INIS)

    Singh, Vijay; Rai, Vineet Kumar; Al-Shamery, Katharina; Nordmann, Joerg; Haase, Markus

    2011-01-01

    Using the combustion synthesis, CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared at low temperatures (550 o C) in a few minutes. Formation of the compound was confirmed by X-ray powder diffraction. Near-infrared to visible upconversion fluorescence emission in the Er 3+ doped CaYAl 3 O 7 phosphor powder has been observed. The effect of co-doping with triply ionized ytterbium in the CaYAl 3 O 7 :Er 3+ phosphor has been studied and the process involved is discussed. - Highlights: → The green emitting up-conversion CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared by easy combustion method. → The combustion method is a simple, energy saving, fast and economical viable process. → The luminescence intensity in the co-doped phosphor is enhanced by several times compared to that of the singly (Er 3+ ) doped phosphor.

  18. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  19. Er –Al2O3 nanoparticles doping of borosilicate glass

    Indian Academy of Sciences (India)

    Administrator

    for determining the optical properties.2 While in homoge- ... of RE-doped single crystals (higher absorption/emission ... nanoparticles doping on the thermal, optical, structural ... The density of the bulk glass materials was measured.

  20. Parametric study of up-conversion efficiency in Er-doped ceria nanoparticles under 780 nm excitation

    International Nuclear Information System (INIS)

    Shehata, N.; Kandas, I.; Samir, E.; Meehan, K.; Aldacher, M.

    2016-01-01

    This paper presents a new parametric study of the optical up-conversion process in ceria nanoparticles doped with erbium (Er-CeO 2 NPs). Under 780 nm excitation, both the possible transitions that occur between Er 3+ ions and up-conversion rate model simulation are presented. Ceria nanoparticles (CeO 2 NPs) doped with erbium are experimentally synthesized using chemical precipitation technique with post-annealing up to 900 °C with different weight ratios of erbium dopant. We found that the synthesized nanoparticles can emit both green and red emissions under 780 nm laser excitation via two-photon absorption mechanism. Then, the quantum efficiencies of both colored emissions are theoretically investigated with different parameters related to the optical conversion process and the studied material. In addition, this work offer suggested ranges for the optimum values of the studied parameters which could improve the quantum yield efficiency. Einstein coefficients for erbium hosted in ceria are discussed in details using Judd–Ofelt analysis. This promising study could be helpful in improving the up-conversion efficiency of Er-ceria nanoparticles for applications such as bio-imaging and optical-based sensors.

  1. Upconversion properties of Er3+/Yb3+ co-doped TeO2-TiO2-K2O glasses.

    Science.gov (United States)

    Su, Fangning; Deng, Zaide

    2006-01-01

    The Er3+/Yb3+ co-doped TeO2-TiO2-K2O glasses were prepared by conventional melting procedures, and their upconversion spectra were performed. The dependence of luminescence intensity on the ratio of Yb3+/Er3+ was studied, and the relationship between green upconversion luminescence intensity and Er3+ concentration is discussed in detail. The 546 nm green upconversion luminescence intensity is optimised in the studied glasses either when the Yb3+/Er3+ ratio is 25/1 and Er3+ concentration is 0.1 mol%, or when the Yb3+/Er3+ ratio is 10/1 and Er3+ concentration is 0.15 mol%. These glasses could be one of the potential candidates for LD pumping microchip solid-state lasers.

  2. Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi{sub 4}Ti{sub 4}O{sub 15}

    Energy Technology Data Exchange (ETDEWEB)

    Peng Dengfeng [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Zou Hua; Wang Xusheng; Yao Xi [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Xu Chaonan [National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052 (Japan); Lin Jian; Sun Tiantuo [School of Material Science and Engineering, Tongji University, 4800 Cao' an Highway, Shanghai 201804 (China)

    2012-12-15

    Er{sup 3+} doped SrBi{sub 4}Ti{sub 4}O{sub 15} (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er{sup 3+} concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} to {sup 4}I{sub 15/2}, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d{sub 33} compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d{sub 33}. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices.

  3. Multifunctional Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles synthesized by reverse micelle method.

    Science.gov (United States)

    Gavrilović, Tamara V; Jovanović, Dragana J; Lojpur, Vesna; Dramićanin, Miroslav D

    2014-02-27

    Synthesis of Eu(3+)- and Er(3+)/Yb(3+)-doped GdVO4 nanoparticles in reverse micelles and their multifunctional luminescence properties are presented. Using cyclohexane, Triton X-100, and n-pentanol as the oil, surfactant, and co-surfactant, respectively, crystalline nanoparticles with ~4 nm diameter are prepared at low temperatures. The particle size assessed using transmission electron microscopy is similar to the crystallite size obtained from X-ray diffraction measurements, suggesting that each particle comprises a single crystallite. Eu(3+)-doped GdVO4 nanoparticles emit red light through downconversion upon UV excitation. Er(3+)/Yb(3+)-doped GdVO4 nanoparticles exhibit several functions; apart from the downconversion of UV radiation into visible green light, they act as upconvertors, transforming near-infrared excitation (980 nm) into visible green light. The ratio of green emissions from (2)H11/2 → (2)I15/2 and (4)S3/2 → (4)I15/2 transitions is temperature dependent and can be used for nanoscale temperature sensing with near-infrared excitation. The relative sensor sensitivity is 1.11%K(-1), which is among the highest sensitivities recorded for upconversion-luminescence-based thermometers.

  4. Multifunctional Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles synthesized by reverse micelle method

    Science.gov (United States)

    Gavrilović, Tamara V.; Jovanović, Dragana J.; Lojpur, Vesna; Dramićanin, Miroslav D.

    2014-02-01

    Synthesis of Eu3+- and Er3+/Yb3+-doped GdVO4 nanoparticles in reverse micelles and their multifunctional luminescence properties are presented. Using cyclohexane, Triton X-100, and n-pentanol as the oil, surfactant, and co-surfactant, respectively, crystalline nanoparticles with ~4 nm diameter are prepared at low temperatures. The particle size assessed using transmission electron microscopy is similar to the crystallite size obtained from X-ray diffraction measurements, suggesting that each particle comprises a single crystallite. Eu3+-doped GdVO4 nanoparticles emit red light through downconversion upon UV excitation. Er3+/Yb3+-doped GdVO4 nanoparticles exhibit several functions; apart from the downconversion of UV radiation into visible green light, they act as upconvertors, transforming near-infrared excitation (980 nm) into visible green light. The ratio of green emissions from 2H11/2 --> 2I15/2 and 4S3/2 --> 4I15/2 transitions is temperature dependent and can be used for nanoscale temperature sensing with near-infrared excitation. The relative sensor sensitivity is 1.11%K-1, which is among the highest sensitivities recorded for upconversion-luminescence-based thermometers.

  5. Bottom-up synthesis of up-converting submicron-sized Er3+-doped LiNbO3 particles

    International Nuclear Information System (INIS)

    Jardiel, T.; Caballero, A.C.; Marín-Dobrincic, M.; Cantelar, E.; Cussó, F.

    2012-01-01

    A new and simple wet chemical synthesis method is proposed to prepare submicron-sized Erbium-doped LiNbO 3 powders. The synthesis procedure comprises the co-precipitation of lithium and erbium ions from common precursors and their subsequent reaction with niobium ethoxide. A systematic characterization by means of X-Ray Diffraction (XRD), X-ray Fluorescence (XRF), Inductively Coupled Plasma (ICP-OES), Atomic Absorption (AAS), Field Emission Scanning Electron Microscopy (FE-SEM), as well as by the examination of the luminescence properties, evidence that with this method a congruent Er 3+ -doped LiNbO 3 single phase material can be obtained without using complex and time-consuming processing steps. The synthesized powders exhibit efficient IR to VIS up-conversion emissions under 974 nm pumping. -- Highlights: ► A novel chemical route to the preparation of LiNbO 3 powders has been developed. ► This process avoids complex and time-consuming processing steps. ► A congruent Er 3+ -doped LiNbO 3 single phase material can be obtained by this way. ► The luminescence properties are the expected for this composition.

  6. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    KAUST Repository

    Mula, Guido; Printemps, Tony; Licitra, Christophe; Sogne, Elisa; D’ Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele; Ricci, Pier Carlo; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea

    2017-01-01

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  7. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    KAUST Repository

    Mula, Guido

    2017-07-14

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn\\'t be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  8. Rare earth point defects in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Sanna, S.

    2007-12-14

    In this work we investigate rare earth doped GaN, by means of theoretical simulations. The huge unit cells necessary to model the experimental system, where dilute amount of rare earth ions are used, are handled with the charge self consistent density-functional based-tight binding (SCC-DFTB) calculational scheme. The method has been extended to include LDA+U and simplified self interaction corrected (SIC)-like potentials for the simulation of systems with localised and strongly correlated electrons. A set of tight-binding parameters has been created to model the interaction of GaN with some dopants, including a selection of lanthanide ions interesting due to their optical or magnetic properties (Pr, Eu, Gd, Er and Tm). The f-electrons were treated as valence electrons. A qualitatively correct description of the band gap is crucial for the simulation of rare earth doped GaN, because the luminescence intensity of the implanted samples depends on the size of the host band gap and because the rare earths could introduce charge transition levels near the conduction band. In this work these levels are calculated with the Slater-Janak (SJ) transition state model, which allows an approximate calculation of the charge transition levels by analysing the Kohn-Sham eigenvalues of the DFT. (orig.)

  9. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

    Science.gov (United States)

    Hortelano, V.; Martínez, O.; Cuscó, R.; Artús, L.; Jiménez, J.

    2016-03-01

    Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.

  10. Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

    NARCIS (Netherlands)

    Inaba, T.; Lee, D.-G.; Wakamatsu, R.; Kojima, T.; Mitchell, B.; Capretti, A.; Gregorkiewicz, T.; Koizumi, A.; Fujiwara, Y.

    2016-01-01

    We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a

  11. Study of absorption and IR-emission of Er3+, Dy3+, Tm3+ doped high-purity tellurite glasses

    Science.gov (United States)

    Motorin, S. E.; Dorofeev, V. V.; Galagan, B. I.; Sverchkov, S. E.; Koltashev, V. V.; Denker, B. I.

    2018-04-01

    A study of high-purity TeO2-ZnO based tellurite glasses doped with Er3+, Dy3+ or Tm3+ that could be used as laser media in the 2-3 μm spectral range is presented. The glasses are prepared by melting the oxides mixture inside a silica glass reactor in an atmosphere of purified oxygen. The low level of hydroxyl groups absorption allowed to measure correctly the luminescence decay characteristics of the dopants. The rare-earth ions absorption bands, the luminescence spectra and kinetic characteristics of emission from the levels 4I11/2, 4I13/2 of Er3+, 6H13/2 of Dy3+ and 3H4, 3H5, 3F4 of Tm3+ ions are investigated. The results confirm the high potential of tellurite glasses as an active media for bulk, planar waveguide and fiber lasers.

  12. Spatially selective Er/Yb-doped CaF{sub 2} crystal formation by CO{sub 2} laser exposure

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo, E-mail: kslim@chungbuk.ac.kr

    2014-10-30

    Highlights: • Oxyfluoride glass–ceramics containing CaF{sub 2} nanocrystals doped with Er{sup 3+} and Yb{sup 3+} ions were formed on the glass surface by CO{sub 2} laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF{sub 2} nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO{sub 2} laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF{sub 2} and miner Ca{sub 2}SiO{sub 4} nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment.

  13. Spatially selective Er/Yb-doped CaF{sub 2} crystal formation by CO{sub 2} laser exposure

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo, E-mail: kslim@chungbuk.ac.kr

    2015-04-15

    Highlights: • Oxyfluoride glass–ceramics containing CaF{sub 2} nanocrystals doped with Er{sup 3+} and Yb{sup 3+} ions were formed on the glass surface by CO{sub 2} laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF{sub 2} nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO{sub 2} laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF{sub 2} and miner Ca{sub 2}SiO{sub 4} nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment.

  14. Spatially selective Er/Yb-doped CaF2 crystal formation by CO2 laser exposure

    International Nuclear Information System (INIS)

    Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo

    2014-01-01

    Highlights: • Oxyfluoride glass–ceramics containing CaF 2 nanocrystals doped with Er 3+ and Yb 3+ ions were formed on the glass surface by CO 2 laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF 2 nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO 2 laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF 2 and miner Ca 2 SiO 4 nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment

  15. Spatially selective Er/Yb-doped CaF2 crystal formation by CO2 laser exposure

    International Nuclear Information System (INIS)

    Kim, Dong-Seon; Lee, Jin-Ho; Lim, Ki-Soo

    2015-01-01

    Highlights: • Oxyfluoride glass–ceramics containing CaF 2 nanocrystals doped with Er 3+ and Yb 3+ ions were formed on the glass surface by CO 2 laser and a heat gun exposure. • Most of Er and Yb ions were distributed inside CaF 2 nanocrystals and fluorine loss was observed in the EDS element maps. • IR-to-VIS upconversion emission efficiency of laser annealed glass ceramics was much increased and compared with that of the furnace-annealed glass ceramics. • Distributed volume of the glass ceramics were estimated by a confocal fluorescence microscope imaging. - Abstract: We report the glass–ceramic precipitation on the oxyfluoride glass surface by spatially selective annealing with a CO 2 laser and a heat gun exposure. X-ray diffraction analysis showed the formation of major CaF 2 and miner Ca 2 SiO 4 nanoparticles. We observed ∼100 nm nanoparticle aggregation by tunneling electron microscopy and element distribution in glass and crystal phases. Spatial distribution of glass ceramics near the glass surface was probed by confocal fluorescence microscope by using much enhanced emission from the Er ions in the laser-treated area. Strong emissions at 365 nm excitation and visible up-conversion emissions at 980 nm excitation also indicated well incorporation of Er and Yb ions into a crystalline environment

  16. Dynamics of a Dispersion-Managed Passively Mode-Locked Er-Doped Fiber Laser Using Single Wall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Norihiko Nishizawa

    2015-07-01

    Full Text Available We investigated the dynamics of a dispersion-managed, passively mode-locked, ultrashort-pulse, Er-doped fiber laser using a single-wall carbon nanotube (SWNT device. A numerical model was constructed for analysis of the SWNT fiber laser. The initial process of passive mode-locking, the characteristics of the output pulse, and the dynamics inside the cavity were investigated numerically for soliton, dissipative-soliton, and stretched-pulse mode-locking conditions. The dependencies on the total dispersion and recovery time of the SWNTs were also examined. Numerical results showed similar behavior to experimental results.

  17. Silver nanoparticles enhanced luminescence properties of Er³⁺ doped tellurite glasses: Effect of heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Fares, Hssen; Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Department of Physics, Sciences Faculty of Tunis, University Tunis ElManar 2092 (Tunisia); Gelloz, Bernard [Graduate School of Engineering, Nagoya University, 2-24-16 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan)

    2014-09-28

    Tellurite glasses doped Er³⁺ ions and containing Silver nanoparticles (Ag NPs) are prepared using melt quenching technique. The nucleation and growth of Ag NPs were controlled by a thermal annealing process. The X-ray diffraction pattern shows no sharp peak indicating an amorphous nature of the glasses. The presence of Ag NPs is confirmed from transmission electron microscopy micrograph. Absorption spectra show typical surface plasmon resonance (SPR) band of Ag NPs within the 510–550 nm range in addition to the distinctive absorption peaks of Er³⁺ ions. The Judd-Ofelt (J-O) intensity parameters, oscillator strengths, spontaneous transition probabilities, branching ratios, and radiative lifetimes were successfully calculated based on the experimental absorption spectrum and the J-O theory. It was found that the presence of silver NPs nucleated and grown during the heat annealing process improves both of the photoluminescence (PL) intensity and the PL lifetime relative to the ⁴I13/2 → ⁴I15/2 transition. Optimum PL enhancement was obtained after 10 h of heat-treatment. Such enhancements are mainly attributed to the strong local electric field induced by SPR of silver NPs and also to energy transfer from the surface of silver NPs to Er³⁺ ions, whereas the quenching is ascribed to the energy transfer from Er³⁺ ions to silver NPs. Using the Mc Cumber method, absorption cross-section, calculated emission cross-section, and gain cross-section for the ⁴I13/2 → ⁴I15/2 transition were determined and compared for the doped and co-doped glasses. The present results indicate that the glass heat-treated for 10 h has good prospect as a gain medium applied for 1.53 μm band broad and high-gain erbium-doped fiber amplifiers.

  18. Intensive up-conversion photoluminescence of Er3+-doped Bi7Ti4NbO21 ferroelectric ceramics and its temperature sensing

    Directory of Open Access Journals (Sweden)

    Hua Zou

    2014-10-01

    Full Text Available The intensive up-conversion (UC photoluminescence and temperature sensing behavior of Er3+-doped Bi7Ti4NbO21(BTN ferroelectric ceramics prepared by a conventional solid-state reaction technique have been investigated. The X-ray diffraction and field emission scanning electron microscope analyses demonstrated that the Er3+-doped BTN ceramics are single phase and uniform flake-like structure. With the Er3+ ions doping, the intensive UC emission was observed without obviously changing the properties of ferroelectric. The optimal emission intensity was obtained when Er doping level was 15 mol.%. The temperature sensing behavior was studied by fluorescence intensity ratio (FIR technique of two green UC emission bands, and the experimental data fitted very well with the function of temperature in a range of 133–573 K. It suggested that the Er3+-doped BTN ferroelectric ceramics are very good candidates for applications such as optical thermometry, electro-optical devices and bio-imaging ceramics.

  19. White phosphor using Yb3+-sensitized Er3+-and Tm3+-doped sol-gel derived lead-fluorosilicate transparent glass ceramic excited at 980 nm

    Science.gov (United States)

    Tavares, M. C. P.; da Costa, E. B.; Bueno, L. A.; Gouveia-Neto, A. S.

    2018-01-01

    Generation of primary colors and white light through frequency upconversion using sol-gel derived 80SiO2:20PbF2 vitroceramic phosphors doped with Er3+, Er3+/Yb3+, Tm3+/Yb3+, and Er3+/Tm3+/Yb3+ excited at 980 nm is demonstrated. For Er3+ and Er3+/Yb3+ doped samples emissions were obtained in the blue (410 nm), green (530, and 550 nm) and red (670 nm) regions, corresponding to the 2H9/2 → 4I15/2,2H11/2 → 4I15/2, 4S3/2 → 4I152 and 4F9/2 → 4I15/2 transitions of Er3+, respectively. The codoping with Yb3+ ions altered the spectral profile of most of the emissions compared to the single doped samples, resulting in changes in the emitted color, in addition to a significant increase in the emission intensity. In Tm3+/Yb3+ co-doped samples visible emissions in the blue (480 nm), and red (650 nm), corresponding to transitions 1G4 → 3H6 and 1G4 → 3F4 of Tm3+, respectively, were obtained. The emission intensity around 480 nm overcome the red emission, and luminescence showed a predominantly blue tone. White light with CIE-1931 coordinates (0.36; 0.34) was produced by homogeneously mixing up powders of heat treated at 400 °C co-doped samples 5.0Er3+/5.0Yb3+ and 0.5Tm3+/2.5Yb3+ in the mass ratio of 13%, and 87%, respectively. The measured emission spectrum for a sample resulting from the mixture showed a profile with very good agreement with the spectrum found from the superimposition of the spectra of the co-doped samples.

  20. Photoluminescence of rare-earth ion (Eu3+, Tm3+, and Er3+)-doped and co-doped ZnNb2O6 for solar cells

    Science.gov (United States)

    Gao, Sen-Pei; Qian, Yan-Nan; Wang, Biao

    2015-08-01

    Visible converted emissions produced at an excitation of 286 nm in ZnNb2O6 ceramics doped with rare-earth ions (RE = Eu3+, Tm3+, Er3+ or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:ZnNb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped ZnNb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared NbO6 groups. Upon 286-nm excitation, Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of 5D0 → 7FJ (J = 1-4) (Eu3+), 1G4 → 3H6 (Tm3+), and 2H11/2/4S3/2 → 4I15/2 (Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 are (0.50, 0.31), (0.14, 0.19), and (0.29, 0.56), respectively. RE ion-co-doped ZnNb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:ZnNb2O6, Eu/Er:ZnNb2O6, and Tm/Er:ZnNb2O6 were calculated to be (0.29, 0.24), (0.45, 0.37), and (0.17, 0.25). Project supported by the National Natural Science Foundation of China (Grant Nos. 10572155 and 10732100) and the Research Fund for the Doctoral Program of Ministry of Education, China (Grant No. 20130171130003).

  1. Upconversion improvement in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles by doping Al{sup 3+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Haifang [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, Jiangsu (China); Wang, Xiechun; Lai, Yunfeng; Cheng, Shuying; Zheng, Qiao; Yu, Jinlin [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China)

    2017-10-15

    Rare-earth ion-doped upconversion (UC) materials show great potential applications in optical and optoelectronic devices due to their novel optical properties. In this work, hexagonal KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles (NPs) were successfully synthesized by a hydrothermal method, and remarkably enhanced upconversion luminescence in green and red emission bands in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs has been achieved by doping Al{sup 3+} ions under 980 nm excitation. Compared to the aluminum-free KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs sample, the UC fluorescence intensities of the green and red emissions of NPs doped with 10 at.% Al{sup 3+} ions were significantly enhanced by 5.9 and 7.3 times, respectively. Longer lifetimes of the doped samples were observed for the {sup 4}S{sub 3/2} state and {sup 4}F{sub 9/2} state. The underlying reason for the UC enhancement by doping Al{sup 3+} ions was mainly ascribed to distortion of the local symmetry around Er{sup 3+} ions and adsorption reduction of organic ligands on the surface of NPs. In addition, the influence of doping Al{sup 3+} ions on the structure and morphology of the NPs samples was also discussed. (orig.)

  2. Enhancment of ferromagnetism in Ba and Er co-doped BiFeO{sub 3} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Naeimi, A.S., E-mail: naeimi.a.s@gmail.com [Department of Physics, Aliabad Katoul Branch, Islamic Azad University, Aliabad Katoul (Iran, Islamic Republic of); Dehghan, E.; Sanavi Khoshnoud, D. [Department of Physics, Semnan University, Semnan 35195-363 (Iran, Islamic Republic of); Gholizadeh, A. [School of Physics, Damghan University (DU), Damghan (Iran, Islamic Republic of)

    2015-11-01

    Bi{sub 1−y−x}Ba{sub y}Er{sub x}FeO{sub 3} [BB{sub y}E{sub x}FO, (0.13≤y≤0.17, 0≤x≤0.2)] nanoparticles were successfully synthesized by a sol–gel method. The structural, microstructural and magnetic properties have been investigated, using X-ray diffraction, Raman scattering, field emission scanning electron microscopy (FE-SEM) and magnetometry measurements at room temperature. The refinement of X-ray diffraction pattern of BB{sub 0.15}E{sub 0}FO indicates a phase transition from rhombohedral (R3c) to tetragonal (P4mm) with increasing Ba content and a transition from the coexistence of rhombohedral–tetragonal phase to orthorhombic (Pbnm) in BB{sub 0.15}E{sub x}FO samples with increasing Er concentration. The Raman analysis confirms crystal phase transition in BB{sub 0.15}E{sub x}FO compounds. The FE-SEM and TEM analysis show that the average nanoparticle size is about 50–100 nm and it decreases with Er concentration. The remnant magnetisation of BB{sub 0.15}E{sub 0.1}FO sample (M{sub r}=0.98 emu/g) is approximately two times greater than compared to BB{sub 0.15}E{sub 0}FO (M{sub r}=0.51 emu/g) that may be attributed to the collapse of spin structure and modifying exchange interactions because of Er{sup +3} doping. This enhancement in magnetic properties at room temperature can play an important role for the practical applications. - Highlights: • Bi{sub 1−y−x}Ba{sub y}Er{sub x}FeO{sub 3} nanoparticles were successfully synthesized by a sol–gel route. • X-ray diffraction and Raman spectroscopy measurements confirmed a phase transition from rhombohedral–orthorhombic. • Considerable enhancement in magnetisation of BiFeO{sub 3} is obtained with Ba and Er co-doping.

  3. ZnMoO4:Er3+,Yb3+ phosphor with controlled morphology and enhanced upconversion through alkali ions doping

    Science.gov (United States)

    Luitel, Hom Nath; Chand, Rumi; Watari, Takanori

    2018-04-01

    A facile hydrothermal method was used to synthesize ZnMoO4:Er3+,Yb3+ nanoparticles. The shapes and sizes of the nanoparticles were well tuned by simply monitoring the pH of the starting solution. Microballs consisting of agglomerated nanograins were observed at strong acidic condition. At mild pH, plates and rectangular particles were realized, while strong basic pH stabilized rods. Further increasing pH to extremely basic conditions (pH > 13), rods changed to fragile hairy structures. The nucleation and growth mechanism of nanograins to form different morphology nanoparticles were studied and illustrated. XRD patterns confirmed well crystalline, triclinic structure despite small amount of aliovalent metal ions doping. Under 980 nm excitation, the ZnMoO4:Er3+,Yb3+ nanophosphor exhibited strong green (centered at 530 and 560 nm) and weak red (centered at 660 nm) upconversion (UC) emissions. Substitution of part of the Zn2+ ions by monovalent alkali ions intensified the UC emission intensities drastically. The order of intensification was K+>Na+>Li+>Rb+>no alkali ion. When Zn2+ ions were substituted with 10 at% K+ ions, the green and red UC emissions intensities increased by more than 50 and 15 folds, respectively. Time dependent measurements confirmed efficient Yb to Er energy transfer in the ZnMoO4:Er3+,Yb3+,K+ nanophosphor. The optimized ZnMoO4:Er3+,Yb3+,K+ phosphor exhibited intense UC emissions with 0.31% quantum yield. The upconverted light is visible to naked eye while pumping by laser of less than 1 mW power and opens door for variety of novel applications.

  4. Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method

    NARCIS (Netherlands)

    Ha, N.N.; Nishikawa, A.; Fujiwara, Y.; Gregorkiewicz, T.

    We prepare and optically characterize a thin film of GaN:Eu. Room temperature intense emission band at around 620 nm is observed, corresponding to 5D0 → 7F2 electronic dipole transition of Eu3+ ions in the GaN host material. At lower temperatures, three components, at 621, 622, and 623 nm, arising

  5. Er{sup 3+}-doped fluorotellurite thin film glasses with improved photoluminescence emission at 1.53 µm

    Energy Technology Data Exchange (ETDEWEB)

    Morea, R. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Fernandez, T.T. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Maté, B. [Instituto de Estructura de la Materia, CSIC, Serrano 121, 28006 Madrid (Spain); Ferrer, F.J. [Centro Nacional de Aceleradores, Univ. Sevilla-CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Maffiotte, C. [CIEMAT, Departamento de Tecnología, Av. Complutense 40, 28040 Madrid (Spain); Fernandez, J.; Balda, R. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Gonzalo, J., E-mail: j.gonzalo@csic.es [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain)

    2016-02-15

    Transparent oxyfluoride tellurite thin film glasses have been produced at room temperature by pulsed laser deposition in O{sub 2} atmosphere from an Er-doped TeO{sub 2}–ZnO–ZnF{sub 2} bulk glass. Thin film glasses present high refractive index (n≥1.95) and good transparency (T≥80%) in the visible (λ>400 nm) and near infrared range. However, their photoluminescence (PL) performance at 1.5 μm is poor. Thermal annealing at moderate temperatures (T≤315 °C), well below glass crystallization, increases the PL intensity by more than one order of magnitude as well as the PL lifetime up to τ≈3.3 ms. Film glasses present a larger fraction of TeO{sub 3} trigonal pyramids than the bulk glass and a very large OH{sup −} content. The structure and composition of film glasses do not change upon annealing and thus the activation of the PL response is related to the improvement of the surface morphology and the significant decrease of their OH{sup −} content. - Highlights: • Transparent Er-doped fluorotellurite films are produced by pulsed laser deposition. • Post-deposition thermal treatments are required to activate Er{sup 3+} photoluminescence. • {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} emission spectrum is similar for bulk and annealed film glasses. • {sup 4}I{sub 13/2} level fluorescence decay is shorter in annealed films than in bulk glasses. • Photoluminescence response relates to hydroxyl groups concentration in film glasses.

  6. Optical properties of Er{sup 3+}-doped strontium barium niobate nanocrystals obtained by thermal treatment in glass

    Energy Technology Data Exchange (ETDEWEB)

    Haro-Gonzalez, P. [Dep. of Fisica Fundamental Experimental, Electronica y Sistemas, Universidad de La Laguna Avda Astrofisico Franscisco Sanchez, 38206 La Laguna, S/C de Tenerife (Spain)], E-mail: patharo@ull.es; Lahoz, F. [Dep. of Fisica Fundamental Experimental, Electronica y Sistemas, Universidad de La Laguna Avda Astrofisico Franscisco Sanchez, 38206 La Laguna, S/C de Tenerife (Spain); Gonzalez-Platas, J. [Dep. of Fisica Fundamental II, Universidad de La Laguna, 38206 La Laguna, S/C de Tenerife (Spain); Caceres, J.M. [Dep. of Edafologia y Geologia, Universidad de La Laguna, 38206 La Laguna, S/C de Tenerife (Spain); Gonzalez-Perez, S. [Dep. of Fisica Fundamental Experimental, Electronica y Sistemas, Universidad de La Laguna Avda Astrofisico Franscisco Sanchez, 38206 La Laguna, S/C de Tenerife (Spain); Marrero-Lopez, D. [Dep. of Quimica Inorganica, Universidad de La Laguna, 38206 La Laguna, S/C de Tenerife (Spain); Capuj, N. [Dep. of Fisica Basica, Universidad de La Laguna, 38206 La Laguna, S/C de Tenerife (Spain); Martin, I.R. [Dep. of Fisica Fundamental Experimental, Electronica y Sistemas, Universidad de La Laguna Avda Astrofisico Franscisco Sanchez, 38206 La Laguna, S/C de Tenerife (Spain)

    2008-05-15

    Measurements of the optical properties of Er{sup 3+} ions in strontium barium niobate glass and glass ceramics have been carried out. The glasses have been fabricated using a melt-quenching method, and the glass ceramic samples have been obtained from the glass precursor by a thermal treatment. The ceramic samples formed by a glassy phase, and a crystalline phase contains nanocrystals of Sr{sub 1-x}Ba{sub x}Nb{sub 2}O{sub 6} (SBN) doped with Er{sup 3+} ions with a mean size of {approx}50 nm, as confirmed with XRD. Green up-conversion emission has been obtained under excitation at 800 nm, and the temporal evolution of this emission has been reported with the purpose of determining the involved up-conversion mechanism. These optical measures have confirmed that the Er{sup 3+} ions have been incorporated into the SBN matrix, after a thermal treatment, which produced an increment of the up-conversion efficiency.

  7. Optical temperature sensing by upconversion luminescence of Er doped Bi5TiNbWO15ferroelectric materials

    Directory of Open Access Journals (Sweden)

    Hua Zou

    2014-12-01

    Full Text Available The Er3+ doped Bi5TiNbWO15 ceramics have been synthesized using conventional solid-state reaction techniques. The crystal structure, ferroelectric properties, UC emission properties and especially the temperature sensing behaviors were systematically studied. With increasing Er3+ content, the investigation of XRD pattern, the ferroelectric loop and the UC emission indicated that the Er3+ ions dopants preferentially substituted the A sites of Bi3TiNbO9 and then Bi2WO6. Based on fluorescence intensity ratio (FIR technique, the observed results implied the ceramics were promising candidates for temperature sensors in the temperature range of 175 K −550 K. More importantly, this study provided a contrast of temperature sensitivity between emission from the same part (Bi3TiNbO9 in bismuth layered-structure and emission from the different part (Bi3TiNbO9 and Bi2WO6 in bismuth layered-structure for the first time.

  8. Upconversion luminescence of Er3+/Yb3+ doped Sr5(PO4)3OH phosphor powders

    Science.gov (United States)

    Mokoena, P. P.; Swart, H. C.; Ntwaeaborwa, O. M.

    2018-04-01

    Sr5(PO4)3OH co-doped with Er3+and Yb3+ powder phosphors were synthesized by urea combustion method. The crystal structure was analyzed using X-ray diffraction (XRD). Particle morphology was analyzed using a Jeol JSM 7800F thermal field emission scanning electron microscope (FE-SEM) and the chemical composition analysis was carried out using an Oxford Instruments AzTEC energy dispersive spectrometer (EDS) attached to the FE-SEM. Upconversion emission was measured by using a FLS980 Spectrometer equipped with a 980 nm NIR laser as the excitation source, and a photomultiplier (PMT) detector. The XRD data of the Sr5(PO4)3OH powder exhibited characteristic diffraction patterns of the hexagonal structure referenced in the standard JCPDS card number 00-033-1348. The sharp peaks revealed the formation of crystalline Sr5(PO4)3OH. The powders were made up of hexagonal nanospheres. The enhanced red emission due to the 4F9/2 → 4I15/2 transitions of Er3+ was observed and was attributed to up conversion (UC) energy transfer from Yb3+. The upconversion energy transfer mechanism from Yb3+ to Er3+ is discussed.

  9. Induced defects in neutron irradiated GaN single crystals

    International Nuclear Information System (INIS)

    Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

    2005-01-01

    The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

  10. Enhanced green and red upconversion emissions in Er3+-doped boro-tellurite glass containing gold nanoparticles

    Science.gov (United States)

    Dousti, M. Reza; Amjad, Raja J.; Mahraz, Zahra Ashur S.

    2015-01-01

    Increasing the cross-section of upconversion emissions from the rare earth ions doped materials is a challenging issue. In this work, we report on the enhancement of the up-converted emissions of Er3+-doped boro-tellurite glasses containing gold nanoparticles which have been prepared by a conventional melt-quench technique. Seven absorption bands and three emission lines are observed using the UV-Vis-IR and photoluminescence spectroscopic techniques, respectively. Red emission is enhanced up to 30 times in a sample having 1 wt% of Au nanoparticles. The presence of the gold nanoparticles with average size of ∼5.74 nm is confirmed by transmission electron microscopy and corresponding surface plasmon band is observed at 630 nm in a singly-doped Au-nanoparticles embedded glass sample. A model to determine the enhancement factor of the emissions is suggested which could not describe the phenomenon for high concentrations of nanoparticles. Enhancement is attributed to the increased local field around the metal, and the results are discussed in details.

  11. Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility

    International Nuclear Information System (INIS)

    Sercheli, Mauricio da Silva

    1999-01-01

    This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er 3+ ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO 4 - , which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

  12. Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

    Science.gov (United States)

    Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

    2015-12-01

    To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

  13. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  14. Relationship between vortex pinning properties and microstructure in Ba–Nb–O-doped YBa2Cu3Oy and ErBa2Cu3Oy films

    International Nuclear Information System (INIS)

    Haruta, Masakazu; Saura, Keisuke; Fujita, Natsuto; Ogura, Yuta; Ichinose, Ataru; Maeda, Toshihiko; Horii, Shigeru

    2013-01-01

    Highlights: •Y123 and Er123 films with Ba–Nb–O nanorods were prepared by PLD. •Nanorod morphology depended on growth temperature (T s ). •Nanorod morphology was different between the Y123 and Er123 with the same T s . •Distribution of local J c depended on nanorod morphology. -- Abstract: In-field J c s were improved by introducing Ba–Nb–O (BNO)-nanorods in YBa 2 Cu 3 O y (Y123) and ErBa 2 Cu 3 O y (Er123) films. Retention of J c against the magnetic field for the BNO-doped Er123 film was superior to that for the BNO-doped Y123 film. Sharp distribution of local critical current density originating from vortex pinning by nanorods with uniform morphology was demonstrated in the Er123 film. On the other hand, fluctuating microstructures of nanorods formed in the Y123 film prepared by the same deposition conditions. Moreover, different growth temperature dependences of nanorod morphology between the Y123 and Er123 films were clarified

  15. A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

    International Nuclear Information System (INIS)

    Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

    2014-01-01

    A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

  16. Crystal growth and scintillation properties of Er-doped Lu{sub 3}Al{sub 5}O{sub 12} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sugiyama, Makoto, E-mail: makoto.sugiyama@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Totsuka, Daisuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2012-02-01

    Er-doped Lu{sub 3}Al{sub 5}O{sub 12} (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under {sup 241}Am {alpha}-ray excitation indicated host emission at approximately 350 nm and Er{sup 3+} 4f-4f emissions. According to the pulse height spectra recorded under {gamma}-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The {gamma}-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 {mu}s and 6-10 {mu}s).

  17. Study of the use of methanol-filled Er-doped suspended-core fibres in a temperature-sensing ring laser system

    International Nuclear Information System (INIS)

    Martín, J C; Berdejo, V; Vallés, J A; Sánchez-Martín, J A; Díez, A; Andrés, M V

    2013-01-01

    We report on an experimental/numerical investigation into the use of methanol-filled Er-doped suspended-core fibres (SCFs) in temperature-sensing ring laser systems. We have adopted a ring laser configuration that includes an Er-doped SCF as a temperature-dependent attenuator (TDA) with a step-index Er-doped fibre (EDF) as the laser active medium. The laser performance dependence on the temperature was measured both in continuous wave (CW) and transient regimes. CW laser output power and build-up time values are compared with those of similar laser systems based on other types of Er-doped PCFs or using other laser configurations. A notable variation of 0.73% °C −1 was achieved in CW operation. Then, by means of parameters obtained by numerically fitting the experimental results, the potential sensing performance of the laser configuration with an SCF as a TDA is studied. Moreover, two ring cavity laser configurations (with the SCF acting basically as an attenuator or also as the active media) are compared and the influence of the position of the coupler inside the ring cavity and the contribution of the erbium doping to improve the sensor features are analysed. The longer interaction lengths compatible with laser action using the Er-doped SCF as a TDA could provide variations of laser output power up to 8.6% °C −1 for 90 mW pump power and a 1 m methanol-filled SCF. (paper)

  18. Effects of a highly Si-doped GaN current spreading layer at the n+-GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cho, H. K.; Choi, R. J.; Hahn, Y. B.; Lee, H. J.; Hong, C. H.

    2004-01-01

    Highly Si-doped GaN thin current spreading layer (CSL) with various carrier concentrations were inserted before the n + -GaN/multi-quantum-well (MQW) interface controlled by the growth rate and the modulated Si-doping in InGaN/GaN blue light-emitting diodes (LEDs), and their effects were investigated by using capacitance-voltage (C-V), current-voltage (I-V), and output power measurements. The LEDs with a highly Si-doped CSL show enhanced I-V characteristics and increased output power with increasing carrier concentration up to some critical point in the CSL. This means that proper high Si-doping in some limited area before the interface may enhance the device performance through the current spreading effect.

  19. Laser action on rare earth doped nitride semiconductor thin layers

    International Nuclear Information System (INIS)

    Oussif, A.; Diaf, M.

    2010-01-01

    Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

  20. Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution

    CERN Document Server

    AUTHOR|(CDS)2070176; Wahl, Ulrich; Martins Correia, Joao; Amorim, Lígia; Silva, Daniel; Decoster, Stefan; Castro Ribeiro Da Silva, Manuel; Temst, Kristiaan; Vantomme, André

    2014-01-01

    The magnetic and electric properties of impurities in semiconductors are strongly dependent on the lattice sites which they occupy. While the majority site can often be predicted based on chemical similarities with the host elements and is usually simple to confirm experimentally, minority sites are far more complicated to predict, detect and identify. We have carried out extensive beta− emission channeling studies on the lattice location of transition metal impurities in wide-gap dilute magnetic semiconductors, namely Co and Mn in GaN and ZnO, making use of radioactive 61Co and 56Mn implanted at the ISOLDE facility at CERN. In addition to the majority occupation of cation (Ga, Zn) sites, we located significant fractions (of the order of 20%) of the Co and Mn impurities in anion (N, O) sites, which are virtually unaffected by thermal annealing up to 900 °C. Here, we present the beta− emission channeling experiments on 61Co-implanted GaN. We discuss these results in the context of our recent reports of mi...

  1. Optical properties of highly Er{sup 3+}-doped sodium-aluminium-phosphate glasses for broadband 1.5 {mu}m emission

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, A. Amarnath [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Babu, S. Surendra [Laser Instrumentation Design Centre, Instrument Research and Development Establishment, Dehradun 248008 (India); Pradeesh, K. [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Otton, C.J. [Valencia Nanophotonics Technology Center, Universidad Politecnica de Valencia, 46022 Valencia (Spain); Vijaya Prakash, G., E-mail: prakash@physics.iitd.ac.in [Nanophotonics Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)

    2011-03-03

    Research highlights: > Highly Er{sup 3+} doped phosphate glasses for the 1.54 {mu}m laser emission were explored. > Emission from these doped glasses shows larger lifetimes and quantum efficiencies. > Optical amplifier parameters are greater than other reported phosphate glasses. > The durability and obtained results are most favourable for short-length amplifiers. - Abstract: Erbium-doped Na{sub 3}Al{sub 2}P{sub 3}O{sub 12} (NAP) glasses with compositions 92NAP-(8-x)Al{sub 2}O{sub 3}-(x)Er{sub 2}O{sub 3} (where x = 2-8) were prepared and characterized for absorption, visible and NIR emission and decay time properties. Judd-Ofelt analysis has been carried out to predict radiative properties of luminescent levels of Er{sup 3+} ions. Comparatively larger photoluminescence lifetimes (7.86 ms) and larger quantum efficiencies (74%) for the laser transition, {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} (at 1.54 {mu}m) are observed. The moisture insensitivity, large Er{sup 3+} ion doping capability and relatively high-gain and broad emission at 1.5 {mu}m are the most notable features of these glasses to realize efficient short-length optical amplifiers.

  2. Infrared emissions in MgSrAl10O17:Er3+ phosphor co-doped with Yb3+/Ba2+/Ca2+ obtained by solution combustion route

    International Nuclear Information System (INIS)

    Singh, Vijay; Kumar Rai, Vineet; Venkatramu, V.; Chakradhar, R.P.S.; Hwan Kim, Sang

    2013-01-01

    An intense infrared emitting MgSrAl 10 O 17 :Er 3+ phosphor co-doped with Yb 3+ , Ba 2+ and Ca 2+ ions have been prepared by a solution combustion method. Phase purity of the derived compounds was confirmed by X-ray diffraction technique. The vibrational properties of MgSrAl 10 O 17 phosphor was studied by Fourier transform infrared spectroscopy. The broad and strong infrared emission of Er 3+ ions at around 1.53 μm was observed upon excitation at 980 nm. Effect of co-doping with the Yb 3+ , Ba 2+ and Ca 2+ ions on the infrared luminescence intensity of Er 3+ ions and the mechanism responsible for the variation in the infrared intensity have been discussed. The results indicate that these materials may be suitable for the optical telecommunication window and wavelength division multiplexing applications. - Highlights: ► The hexagonal phase of MgSrAl 10 O 17 could be obtained by the low temperature combustion method. ► The broad and strong infrared emission of Er 3+ ions at around 1.53 μm was observed. ► Effect of co-doping with the Yb 3+ , Ba 2+ and Ca 2+ ions on the infrared luminescence intensity of Er 3+ were reported.

  3. Highly sensitive formaldehyde resistive sensor based on a single Er-doped SnO_2 nanobelt

    International Nuclear Information System (INIS)

    Li, Shuanghui; Liu, Yingkai; Wu, Yuemei; Chen, Weiwu; Qin, Zhaojun; Gong, Nailiang; Yu, Dapeng

    2016-01-01

    SnO_2 nanobelts (SnO_2 NBs) and Er"3"+-doped SnO_2 nanobelts (Er–SnO_2 NBs) were synthesized by thermal evaporation. The obtained samples were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersion spectrometer (EDS), and X-ray photoelectron spectrometer (XPS). It is found that Er–SnO_2 NBs have a good morphology with smooth surface and their thickness are about 30 nm, widths between 200 nm and 600 nm, and lengths 30–80 mm. The nanobelts with good morphology were taken to develop sensors based on a single Er–SnO_2 NB/SnO_2 NB for studying sensitive properties. The results reveal that the response of a single Er–SnO_2 nanobelt device is 9 to the formaldehyde gas with a shorter response (recovery time) of 17 (25) s.

  4. Chirp-free direct modulation of 550 nm emission in Er3+ -Doped Fluoroindate glass by nonlinear feedback control

    Science.gov (United States)

    Cai, Runyu; Thitsa, Makhin; Bluiett, Althea; Brown, Ei; Hommerich, Uwe

    2017-06-01

    We propose a direct modulation method with nonlinear feedback controller which can produce chirp-free modulation of the output pulse without bulky external modulators. This work reports the design of the controller which, via a feedback loop, varies and controls the pump rate in real time by automatically adjusting the pump power to precisely modulate the emission of 550 nm in Er3+ -doped Fluoroindate glass under 1.48 μm pumping. In this interdisciplinary paper, well established theoretical tools from nonlinear control theory are applied to the dynamical system of the laser material in order to produce the desired output of the laser. The controller is simulated in MATLAB Simulink and the simulation results show that our technique yields precise modulation of the output intensity without frequency chirping. Results on both theoretical analysis of the control methodology and simulation are presented.

  5. Upconversion emission study of Er3+/Yb3+ doped barium titanate phosphor prepared by co-precipitation method

    International Nuclear Information System (INIS)

    Mahata, M.K.; Dey, R.; Kumar, K.; Rai, V.K.; Rai, S.B.

    2012-01-01

    In the present work we have successfully synthesized the Er 3+ , Yb 3+ doped barium titanate phosphor via co-precipitation synthesis method. Under 980 nm excitation, tri-color upconversion fluorescence has been observed. The Fourier Transform Infrared measurement was done to check the presence of organic impurities. In order to find out how many photons are involved in each emission band, the variation of UC emission intensity of the codoped phosphor is studied with increase in excitation power. Upconversion emission spectra show that as the annealing temperature of the powder is increased, intensity of red emission decreases and intensity of green emission increases due to the decrease in maximum phonon frequency of the host material. (author)

  6. Strong broad green UV-excited photoluminescence in rare earth (RE = Ce, Eu, Dy, Er, Yb) doped barium zirconate

    Energy Technology Data Exchange (ETDEWEB)

    Borja-Urby, R. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico); Diaz-Torres, L.A., E-mail: ditlacio@cio.mx [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico); Angeles-Chavez, C. [Instituto Mexicano del Petroleo, Ciudad de Mexico, D. F. 07730 (Mexico); Meza, O. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico)

    2011-10-25

    Highlights: > Trivalent rare earth (RE) substitution on Zr{sup 4+} sites in BaZrO{sub 3} lead to band gap narrowing. > RE substitution lead to enhanced blue-green intrinsic emission of nanocrystalline BaZrO{sub 3} > Blue-green hue of BaZrO3:RE depends on RE dopant and excitation UV wavelength > BaZrO3: Dy{sup 3+} PL chromatic coordinates correspond to pure white color coordinates of CIE 1931 model - Abstract: The wet synthesis hydrothermal method at 100 deg. C was used to elaborate barium zirconate (BaZrO{sub 3}) unpurified with 0.5 mol% of different rare earth ions (RE = Yb, Er, Dy, Eu, Ce). Morphological, structural and UV-photoluminescence properties depend on the substituted rare earth ionic radii. While the crystalline structure of RE doped BaZrO{sub 3} remains as a cubic perovskite for all substituted RE ions, its band gap changes between 4.65 and 4.93 eV. Under 267 nm excitation the intrinsic green photoluminescence of the as synthesized BaZrO{sub 3}: RE samples is considerably improved by the substitution on RE ions. For 1000 deg. C annealed samples, under 267 nm, the photoluminescence is dominated by the intrinsic BZO emission. It is interesting to notice that Dy{sup 3+}, Er{sup 3+} and Yb{sup 3+} doped samples present whitish emissions that might be useful for white light generation under 267 nm excitation. CIE color coordinates are reported for all samples.

  7. Slowdown of group velocity of light in dual-frequency laser-pumped cascade structure of Er3+-doped optical fiber at room temperature

    Science.gov (United States)

    Qiu, Wei; Yang, Yujing; Gao, Yuan; Liu, Jianjun; Lv, Pin; Jiang, Qiuli

    2018-04-01

    Slow light is demonstrated in the cascade structure of an erbium-doped fiber with two forward propagation pumps. The results of the numerical simulation of the time delay and the optimum modulation frequency complement each other. The time delay and the optimum modulation frequency depend on the pump ratio G (G  =  {{P}1480}:{{P}980} ). The discussion results of this paper show that a larger time delay of slow light propagation can be obtained in the cascade structure of Er3+-doped optical fibers with dual-frequency laser pumping. Compared to previous research methods, the dual-frequency laser-pumped cascade structure of an Er3+-doped optical fiber is more controllable. Based on our discussion the pump ratio G should be selected in order to obtain a more appropriate time delay and the slowdown of group velocity.

  8. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

    Science.gov (United States)

    Amano, Hiroshi

    2015-12-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

  9. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

    Science.gov (United States)

    Amano, Hiroshi

    2015-06-26

    This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Physical and optical properties of calcium sulfate ultra-phosphate glass-doped Er2O3

    Science.gov (United States)

    Aliyu, Aliyu Mohammed; Hussin, R.; Deraman, Karim; Ahmad, N. E.; Danmadami, Amina M.; Yamusa, Y. A.

    2018-03-01

    The influence of erbium on physical and optical properties of calcium sulfate ultra-phosphate glass was investigated using conventional melt quench process. Selected samples of composition 20CaSO4 (80 - x) P2O5- xEr2O3 with 0.1 ≤x ≤ 0.9 mol.% were prepared and assessed. X-ray diffraction (XRD) techniques were used to confirm the amorphous nature of the said samples. The structural units of phosphate-based glass were assessed from Raman spectra as ultra-(Q3), meta-(Q2), pyro-(Q1) and orthophosphate (Q0) units. Depolymerization process of the glasses was testified for higher calcium oxide content and UV-visible for optical measurement. Thermal analysis have been investigated by means of thermogravimetric analysis. The results show the decomposition of materials in the temperature range of 25∘C-1000∘C. Er3+ absorption spectra were measured in the range of 400-1800nm. PL measurement was carried out in order to obtain the excitation and emission spectra of the samples. The emission spectra excited at 779nm comprises of 518nm, 550nm and 649nm of transition 4F9/2, 4S3/2 and 2H11/2 excited states to 4I15/2 ground state. In physical properties, the density calculated using Archimedes method is inversely proportional to molar volume with increase in Er3+ ions. Optical bandgap (Eg) were determined using Tauc’s plots for direct transitions where Eg (direct) decreases with increase in erbium content. The refractive index increases with decreasing molar volume; this may have a tendency for larger optical bandgap. The result obtained from the glass matrix indicates that erbium oxide-doped calcium sulfate ultra-phosphate may give important information for wider development of functional glasses.

  12. Upconversion studies of Er3+/Yb3+ doped SrO.TiO2 borosilicate glass ceramic system

    International Nuclear Information System (INIS)

    Maheshwari, Aditya; Om Prakash; Kumar, Devendra; Rai, S.B.

    2011-01-01

    Upconversion behaviour has been studied in various matrices and fine powders of SrTiO 3 by previous workers. In present work, Er 3+ /Yb 3+ were doped in appropriate ratio in SrO.TiO 2 borosilicate glass ceramic system to study the upconversion phenomenon. Dielectric properties of this class of glass ceramic system have been extensively investigated by Thakur et al. It has been observed that both upconversion efficiency and dielectric constant increases with transformation of glass into glass ceramic. Therefore, present investigation is based upon the study of optical as well as the electrical properties of same glass ceramic system. In order to prepare different crystalline matrices, two different Er 3+ /Yb 3+ :SrO.TiO 2 borosilicate glasses with same amount of Er 2 O 3 and Yb 2 O 3 were prepared by melt quench method. Glasses were transparent with light-wine colour. Glass ceramics were prepared from the glasses by heat treatment based on DTA (Differential thermal analysis) results. Glass ceramics were fully opaque with brownish-cream colour. Powder X-ray diffraction (XRD) patterns confirmed that two different crystalline matrices, Sr 3 Ti 2 O 7 , Ti 10 O 19 and SrTiO 3 , TiO 2 were present in two glass ceramic samples respectively. Luminescence properties of glass and glass ceramic samples with 976nm laser irradiation showed that the intensities of the green and red emission increased multiple times in glass ceramic than that of the glass. Possible mechanisms responsible for upconversion eg. Energy Transfer (ET) and Excited State Absorption (ESA), were studied through laser pumping power log dependence

  13. High surface hole concentration p-type GaN using Mg implantation

    International Nuclear Information System (INIS)

    Long Tao; Yang Zhijian; Zhang Guoyi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  14. Room Temperature Erbium-Doped Yttrium Vanadate (Er:YVO4) Laser and Amplifier

    Science.gov (United States)

    2016-09-01

    10%. We maintained the LDM pump pulse duration at 5 ms, which is much longer than the Er3+ upper laser level (4I13/2) lifetime in YVO4 at RT (3 ms...of 2 ms ranging from 4 to 131 W was used to invert the gain medium. At 1.8 ms into the pump pulse, the 1603-nm seed was turned on for 500 µs. As

  15. Effect of Er doping on the superconducting properties of porous MgB2

    Indian Academy of Sciences (India)

    20 K reaches 9.7 T. These results imply that the RE element Er fills the pores, enhances the density and the grain connectivity. Hence, the ... ing elements, such as Mn, Fe, Co and Ni, which can depair ..... Lyard L, Szabó P, Klein T, Marcus J, Marcenat C, Kim K H, ... Rogado N, Hayward M A, Regan K A, Wang Y, Ong N P,.

  16. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  17. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  18. Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, Oleg; Bresler, Mikhail; Kuznetsov, Alexey; Kudoyarova, Vera; Pak, Petr; Terukov, Evgenii; Tsendin, Konstantin; Yassievich, Irina [A F Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Weiser, Gerhard [Phillips-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

    1998-05-11

    We have observed room-temperature erbium-ion electroluminescence in erbium-doped amorphous silicon. Electrical conduction through the structure is controlled by thermally activated ionization of deep D{sup -} defects in an electric field and the reverse process of capture of mobile electrons by D{sup 0} states. Defect-related Auger excitation (DRAE) is responsible for excitation of erbium ions located close to dangling-bond defects. Our experimental data are consistent with the mechanisms proposed

  19. Impact of incoherent pumping field and Er3+ ion concentration on group velocity and index of refraction in an Er3+-doped YAG crystal

    International Nuclear Information System (INIS)

    Jafarzadeh, Hossein; Asadpour, Seyyed Hossein; Soleimani, H Rahimpour

    2015-01-01

    The effect of Er 3+ ion concentration and incoherent pumping field on the refractive index and group index in an Er 3+ : YAG crystal is investigated. It is shown that under different concentrations of Er 3+ ion in the crystal, the index of refraction and absorption can be changed and a high index of refraction is accompanied by amplification in the medium. Also, it is shown that with the switching from subluminal to superluminal, or vice versa, light propagation can be obtained by different concentrations of Er 3+ ions in the crystal. (paper)

  20. Bright white upconversion luminescence from Er3+/Tm3+/Yb3+-doped titanate-based glasses prepared by aerodynamic levitation method

    Science.gov (United States)

    Zhang, Minghui; Yu, Jianding; Jiang, Wan; Liu, Yan; Ai, Fei; Wen, Haiqin; Jiang, Meng; Yu, Huimei; Pan, Xiuhong; Tang, Meibo; Gai, Lijun

    2017-10-01

    Aerodynamic levitation method was employed to prepare Er3+/Tm3+/Yb3+-doped titanate-based glasses. DTA results show that the glass performs high thermal stability with the glass transition temperature of 799 °C. The interaction among rare earth ions has been discussed by adjusting the relative concentration. Er3+ ions can quench the upconversion luminescence of Tm3+ ions. Tm3+ ions play a strong role in quenching the emissions of Er3+ and Tm3+ when the content of Tm3+ ions is greater than or equal 0.05. From the view of the ratio of red emission to green emission, Tm3+ ions can improve the red emission of Er3+ ions to some extent in contrast with the green emissions of Er3+ ions. 980 nm incident laser can be efficiently absorbed by Yb3+ ions. The relative intensity of red, green, and blue upconversion luminescence has been tuned to obtain white light. The composition with white upconversion luminescence of the color coordinate (0.291, 0.3292) has been found. Moreover, white upconversion luminescence mechanism is a two-photon process of ET, ESA, and cooperative sensitization. Rare earth ions doped titanate-based glasses with bright upconversion luminescence perform potential applications in color display, back light, et al.

  1. Enhancement of magnetic and ferroelectric properties of BiFeO3 by Er and transition element (Mn, Co) co-doping

    International Nuclear Information System (INIS)

    Han, Yumin; Mao, Weiwei; Quan, Chuye; Wang, Xingfu; Yang, Jianping; Yang, Tao; Li, Xing’ao

    2014-01-01

    Highlights: • BiFeO 3 , Bi 0.8 Er 0.2 FeO 3 , Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 and Bi 0.8 Er 0.2 Fe 0.9 Co 0.1 O 3 nanoparticles were prepared by sol–gel method. • The introduction of Er and Mn, Co into BiFeO 3 leads into a phase transition with reduced grain size. • The phase transformation combined with size reduction has significantly increased saturated polarization (Ps), remanent polarization (Pr) and saturated magnetization (Ms), remanent magnetization (Mr) behaviors of the doped samples with the same variation trend. • The formation of dipolar defect complexes (DDCs) in the doped samples may also contribute to the improved ferroelectric property. • Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 exhibits significantly improved ferroelectric and ferromagnetic properties. - Abstract: BiFeO 3 (BFO), Bi 0.8 Er 0.2 FeO 3 (BEFO), Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 (BEFMO) and Bi 0.8 Er 0.2 Fe 0.9 Co 0.1 O 3 (BEFCO) nanoparticles were prepared by sol–gel method having an average size of 200 nm for BFO, under100 nm for BEFO and under 60 nm for BEFMO and BEFCO. Phase transition from a rhombohedral symmetry (R3c) for BFO to an orthorhombic symmetry (Ibmm) for BEFO, BEFMO and BEFCO has been observed. The phase transformation combined with size reduction has significantly improved both ferroelectric and ferromagnetic behaviors of the doped samples in a similar way. The formation of dipolar defect complexes (DDCs) in the doped samples also contributes to the improved ferroelectric property with saturated polarization (Ps) of 0.375 μC/cm 2 and remanent polarization (Pr) of 0.244 μC/cm 2 for BEFMO. Size effect may also impact the simultaneously developed Pr for BEFMO and BEFCO. Owning to the interactions between the ferromagnetic and antiferromagnetic microdomains, improved saturated magnetization (Ms) and remanent magnetization (Mr) are also observed in BEFMO

  2. Enhanced infrared-to-visible up-conversion emission and temperature sensitivity in (Er3+,Yb3+, and W6+) tri-doped Bi4Ti3O12 ferroelectric oxide

    Science.gov (United States)

    Bokolia, Renuka; Mondal, Manisha; Rai, V. K.; Sreenivas, K.

    2017-02-01

    Strong up conversion (UC) luminescence at 527, 550, and 662 nm is compared under an excitation of 980 nm in single doped (Er3+), co-doped (Er3+/Yb3+), and (Er3+/Yb3+/W6+) tri-doped bismuth titanate (Bi4Ti3O12). For the co-doped system, the frequency (UC) emission intensity due to Er3+ ions is enhanced significantly in the green bands due to the efficient energy transfer from Yb3+ to Er3+ ions. Further increase in the emission intensity is seen with non-luminescent W6+ ions in the tri-doped system due to the modification in the local crystal field around the Er3+ ions, and is evidenced through a gradual change in the crystal structure of the host lattice with increasing W6+ content. The observed changes in the fluorescence lifetime and the associated energy transfer mechanisms are discussed. A progressive reduction of the lifetime of the 4S3/2 levels of Er3+ ions from 72 to 58.7 μs with the introduction of Yb3+ and W6+ dopant increases the transition probability and enhances the UC emission intensity. The efficiency of the energy transfer process ( η ) in the co-doped and tri-doped systems is found to be 9.4% and 18.6%, respectively, in comparison to the single doped system. Temperature sensing based on the fluorescence intensity ratio (FR) technique shows high sensitivity (0.0123 K-1) in the high temperature range (293 to 523 K) for an optimum content of Er3+, Yb3+, and W6+ with x = 0.03, y = 0.18, and z = 0.06 at. % in the tri-doped Bi4-x-yErxYbyTi3-zWzO12 ferroelectric composition, and is found useful for potential applications in optical thermometry.

  3. Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glasses

    Energy Technology Data Exchange (ETDEWEB)

    Epurescu, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)], E-mail: george@nipne.ro; Vlad, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Bodea, M.A. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Vasiliu, C. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dumitrescu, O. [University Politehnica of Bucharest, Faculty of Industrial Chemistry, Science and Engineering of Oxide Materials Department, Polizu Str. 1, sect. 1, Bucharest (Romania); Niciu, H. [National Institute of Glass, Department for Laser Glass Technology, 47 Th. Pallady Str., Sect.3, Bucharest (Romania); Elisa, M. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Siraj, K.; Pedarnig, J.D.; Baeuerle, D. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Filipescu, M.; Nedelcea, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Galca, A.C. [National Institute of Materials Physics, Atomistilor 105bis, P.O. Box MG 07, RO- 77125, Magurele (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)

    2009-03-01

    Thin films of complex oxides have been obtained by pulsed-laser deposition (PLD) from glass targets belonging to the system Li{sub 2}O-Al{sub 2}O{sub 3}-P{sub 2}O{sub 5}-(RE){sub 2}O{sub 3}, with RE = Nd, Pr, Er. The films were deposited on quartz, silicon and ITO/glass substrates using a F{sub 2} laser ({lambda} = 157 nm, {iota} {approx} 20 ns) for ablation in vacuum. The structural, morphological and optical properties of the oxide films were investigated through IR and UV-VIS spectroscopy, Atomic Force Microscopy (AFM), Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Spectroscopic Ellipsometry. The laser wavelength was found to be the key parameter to obtain thin films with very smooth surface. In this way new possibilities are opened to grow multilayer structures for photonic applications.

  4. Enhanced luminescence from silver nanoparticles integrated Er{sup 3+}-doped boro-tellurite glasses: Impact of annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.

    2015-11-15

    Considerable enhancement of rare earth ions luminescence intensity stimulated via metal nanoparticles (NPs) inclusion inside inorganic glass matrix opened a new avenue to achieving efficient lasing glass media. Tuning the localised surface plasmon resonance (LSPR) band of noble metal NPs through their precise size manipulation is demonstrated to be the key for such accomplishment. We report the influences of annealing (heat treatment) temperature (AT) on the down-conversion luminescence features of erbium (Er{sup 3+}) doped zinc-boro-tellurite (ZBT) glasses containing silver NPs. The AT dependent (between 390 and 450 °C) variations in refractive index and density are ascribed to the generation of non-bridging oxygen (NBO) ions. X-ray diffraction pattern confirmed the amorphous nature of the melt-quenched synthesized glass samples. TEM micrograph revealed the nucleation of Ag NPs inside the glass matrix having average diameter between 8.4 (un-annealed sample) to 11.8 nm (annealed). The UV–Vis spectra exhibited seven absorption bands corresponding to {sup 4}f–{sup 4}f transitions of Er{sup 3+} ions. Annealed samples displayed a red shift of SPR bands positioned at 550 and 580 nm. Judd–Ofelt theory is used to evaluate the intensity parameters for radiative transitions within 4f{sup n} configuration of Er{sup 3+} ion. Annealing up to 410 °C is found to stimulate the plasmonic effect through the enlargement of NPs. Consequently, the PL intensity is enhanced by a factor of 3.23 ({sup 2}H{sub 11/2} → {sup 4}I{sub 15/2}), 4.10 ({sup 4}S{sub 3/2} → {sup 4}I{sub 15/2}), and 3.79 ({sup 4}F{sub 9/2} → {sup 4}I{sub 15/2}). This achieved excellent down-conversion luminescence efficiency of proposed glasses shows their potential implementation in photonic devices and solid state lasers. - Highlights: • The changes in the physical properties are ascribed to the generation of NBO. • TEM images confirmed the presence of Ag NPs in the glass matrix. • The achieved

  5. Bifunctional behavior of Er3+ ions as the sintering additive and the fluorescent agent in Er3+ single doped γ-AlON transparent ceramics

    International Nuclear Information System (INIS)

    Wang, Ying; Xie, Xiumin; Qi, Jianqi; Wang, Shanshan; Wei, Nian; Lu, Zhongwen; Chen, Xingtao; Lu, Tiecheng

    2016-01-01

    We report on the sintering promoting and fluorescent activator roles of Er 3+ in AlON:Er 3+ transparent ceramics prepared by pressureless sintering with Er 2 O 3 and AlON powder. There shows that the transparency of samples varied with the content of Er 2 O 3 additive. The AlON:Er 3+ ceramics showed upconversion luminescence peaking at 546 nm, 662 nm and 840 nm under the 980 nm excitation due to transition of 4 S 3/2 / 2 H 11/2 → 4 I 15/2 , 4 F 9/2 → 4 I 15/2 and 4 S 3/2 / 2 H 11/2 → 4 I 13/2 of Er 3+ ions, respectively. The infrared spectra exhibited strong emission at 1534 nm corresponds to 4 I 13/2 → 4 I 15/2 transition. The mechanism of the IR and visible emission bands in AlON:Er 3+ ceramics are discussed, which suggest it should be attractive for lighting and display devices applications.

  6. Photoluminescence quenching by OH in Er- and Pr-doped glasses for 1.5 and 1.3 μm optical amplifiers

    Science.gov (United States)

    Faber, Anne J.; Simons, Dennis R.; Yan, Yingchao; de Waal, Henk

    1994-09-01

    In this paper we report on the effect of hydroxyl (OH) groups on the photoluminescence in the near IR (1.5 and 1.3 micrometers ) in rare earth (Er, Pr)-doped glasses. The 1.5 micrometers emission of Er-doped phosphate glasses was studied, before and after a special heat treatment. The luminescent lifetime of the 1.5 micrometers emission increases substantially, typically from 3 ms up to 7.2 ms for a 2 mole% Er2O3-doped phosphate glass, due to the controlled heat treatment. The increase in lifetime is ascribed to a decrease in OH- concentration, which is confirmed by IR-absorption spectroscopy. The quenching by OH is described by a simplified quenching model, which predicts the 1.5 micrometers emission lifetime as a function of Er- concentration with the OH-concentration as parameter. It appears that the larger part of the OH groups is coupled to Er ions and thus acts as quenching center. Photoluminescence quenching by OH groups is also reported for the 1.3 micrometers emission of Pr in GeS2-glasses: In pure OH-free GeS2 glass the 1.3 micrometers emission lifetime is as high as 350 microsecond(s) , for a 400 ppm dopant level. In GeS2 glasses containing only small amounts of OH (approximately 100 ppm), this lifetime is less than 200 microsecond(s) . Both examples demonstrate that for the fabrication of efficient glass optical amplifiers at the telecommunication windows 1.3 and 1.5 micrometers , the OH-impurity level of the host glass must be kept as low as possible.

  7. Observation of stable bound soliton with dual-wavelength in a passively mode-locked Er-doped fiber laser

    International Nuclear Information System (INIS)

    Zheng Yu; Tian Jin-Rong; Dong Zi-Kai; Xu Run-Qin; Li Ke-Xuan; Song Yan-Rong

    2017-01-01

    A phase-locked bound state soliton with dual-wavelength is observed experimentally in a passively mode-locked Er-doped fiber (EDF) laser with a fiber loop mirror (FLM). The pulse duration of the soliton is 15 ps and the peak-to-peak separation is 125 ps. The repetition rate of the pulse sequence is 3.47 MHz. The output power is 11.8 mW at the pump power of 128 mW, corresponding to the pulse energy of 1.52 nJ. The FLM with a polarization controller can produce a comb spectrum, which acts as a filter. By adjusting the polarization controller or varying the pump power, the central wavelength of the comb spectrum can be tuned. When it combines with the reflective spectrum of the fiber Bragg grating, the total spectrum of the cavity can be cleaved into two parts, then the bound state soliton with dual-wavelength at 1549.7 nm and 1550.4 nm is obtained. (paper)

  8. Enhancement of single particle rare earth doped NaYF4: Yb, Er emission with a gold shell

    International Nuclear Information System (INIS)

    Li, Ling; Green, Kory; Hallen, Hans; Lim, Shuang Fang

    2015-01-01

    Upconversion of infrared light to visible light has important implications for bioimaging. However, the small absorption cross-section of rare earth dopants has limited the efficiency of these anti-Stokes nanomaterials. We present enhanced excitation absorption and single particle fluorescent emission of sodium yttrium fluoride, NaYF 4 : Yb, Er based upconverting nanoparticles coated with a gold nanoshell through surface plasmon resonance. The single gold-shell coated nanoparticles show enhanced absorption in the near infrared, enhanced total emission intensity, and increased green relative to red emission. We also show differences in enhancement between single and aggregated gold shell nanoparticles. The surface plasmon resonance of the gold-shell coated nanoparticle is shown to be dependent on the shell thickness. In contrast to other reported results, our single particle experimental observations are corroborated by finite element calculations that show where the green/red emission enhancement occurs, and what portion of the enhancement is due to electromagnetic effects. We find that the excitation enhancement and green/red emission ratio enhancement occurs at the corners and edges of the doped emissive core. (paper)

  9. Miniature fiber-optic multiphoton microscopy system using frequency-doubled femtosecond Er-doped fiber laser.

    Science.gov (United States)

    Huang, Lin; Mills, Arthur K; Zhao, Yuan; Jones, David J; Tang, Shuo

    2016-05-01

    We report on a miniature fiber-optic multiphoton microscopy (MPM) system based on a frequency-doubled femtosecond Er-doped fiber laser. The femtosecond pulses from the laser source are delivered to the miniature fiber-optic probe at 1.58 µm wavelength, where a standard single mode fiber is used for delivery without the need of free-space dispersion compensation components. The beam is frequency-doubled inside the probe by a periodically poled MgO:LiNbO3 crystal. Frequency-doubled pulses at 786 nm with a maximum power of 80 mW and a pulsewidth of 150 fs are obtained and applied to excite intrinsic signals from tissues. A MEMS scanner, a miniature objective, and a multimode collection fiber are further used to make the probe compact. The miniature fiber-optic MPM system is highly portable and robust. Ex vivo multiphoton imaging of mammalian skins demonstrates the capability of the system in imaging biological tissues. The results show that the miniature fiber-optic MPM system using frequency-doubled femtosecond fiber laser can potentially bring the MPM imaging for clinical applications.

  10. Enhanced Power Conversion Efficiency of Perovskite Solar Cells with an Up-Conversion Material of Er3+-Yb3+-Li+ Tri-doped TiO2.

    Science.gov (United States)

    Zhang, Zhenlong; Qin, Jianqiang; Shi, Wenjia; Liu, Yanyan; Zhang, Yan; Liu, Yuefeng; Gao, Huiping; Mao, Yanli

    2018-05-11

    In this paper, Er 3+ -Yb 3+ -Li + tri-doped TiO 2 (UC-TiO 2 ) was prepared by an addition of Li + to Er 3+ -Yb 3+ co-doped TiO 2 . The UC-TiO 2 presented an enhanced up-conversion emission compared with Er 3+ -Yb 3+ co-doped TiO 2 . The UC-TiO 2 was applied to the perovskite solar cells. The power conversion efficiency (PCE) of the solar cells without UC-TiO 2 was 14.0%, while the PCE of the solar cells with UC-TiO 2 was increased to 16.5%, which presented an increase of 19%. The results suggested that UC-TiO 2 is an effective up-conversion material. And this study provided a route to expand the spectral absorption of perovskite solar cells from visible light to near-infrared using up-conversion materials.

  11. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    Science.gov (United States)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  12. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-01-28

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

  13. Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

    International Nuclear Information System (INIS)

    Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

    2015-01-01

    The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

  14. Upconversion emission and cathodoluminescence of Er{sup 3+}-doped NaYbF{sub 4} nanoparticles for low-temperature thermometry and field emission displays

    Energy Technology Data Exchange (ETDEWEB)

    Du, Peng; Yu, Jae Su [Kyung Hee University, Department of Electronics and Radio Engineering, Yongin (Korea, Republic of); Luo, Laihui [Ningbo University, Department of Microelectronic Science and Engineering, Ningbo (China)

    2017-03-15

    The Er{sup 3+}-doped NaYbF{sub 4} nanoparticles were fabricated by a hydrothermal method. The green and red emissions located at around 525, 542 and 657 nm corresponding to the {sup 2}H{sub 11/2} → {sup 4}I{sub 15/2}, {sup 4}S{sub 3/2} → {sup 4}I{sub 15/2} and {sup 4}F{sub 9/2} → {sup 4}I{sub 15/2} transitions of Er{sup 3+} ions, respectively, were observed when pumped at 980 nm light. Furthermore, with the help of the fluorescence intensity ratio technique, the thermometric properties of as-prepared products from the thermally coupled {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} levels of Er{sup 3+} ions were studied by analyzing temperature-dependent upconversion (UC) emission spectra. The maximum sensitivity for the Er{sup 3+}-doped NaYbF{sub 4} nanoparticles was found to be around 0.0043 K{sup -} {sup 1} with a temperature range of 93-293 K. In addition, the cathodoluminescence (CL) spectrum of the synthesized nanoparticles was nearly the same as the UC emission spectrum and the CL emission intensity did not exhibit saturation with the increase of accelerating voltage and filament current. (orig.)

  15. Upconversion emission and cathodoluminescence of Er"3"+-doped NaYbF_4 nanoparticles for low-temperature thermometry and field emission displays

    International Nuclear Information System (INIS)

    Du, Peng; Yu, Jae Su; Luo, Laihui

    2017-01-01

    The Er"3"+-doped NaYbF_4 nanoparticles were fabricated by a hydrothermal method. The green and red emissions located at around 525, 542 and 657 nm corresponding to the "2H_1_1_/_2 → "4I_1_5_/_2, "4S_3_/_2 → "4I_1_5_/_2 and "4F_9_/_2 → "4I_1_5_/_2 transitions of Er"3"+ ions, respectively, were observed when pumped at 980 nm light. Furthermore, with the help of the fluorescence intensity ratio technique, the thermometric properties of as-prepared products from the thermally coupled "2H_1_1_/_2 and "4S_3_/_2 levels of Er"3"+ ions were studied by analyzing temperature-dependent upconversion (UC) emission spectra. The maximum sensitivity for the Er"3"+-doped NaYbF_4 nanoparticles was found to be around 0.0043 K"- "1 with a temperature range of 93-293 K. In addition, the cathodoluminescence (CL) spectrum of the synthesized nanoparticles was nearly the same as the UC emission spectrum and the CL emission intensity did not exhibit saturation with the increase of accelerating voltage and filament current. (orig.)

  16. Structure-property relations in new fluorophosphate glasses singly- and co-doped with Er3+ and Yb3+

    International Nuclear Information System (INIS)

    Gonçalves, Tássia S.; Moreira Silva, Raphaell J.; Oliveira Junior, Marcos de; Ferrari, Cynthia R.; Poirier, Gäel Y.; Eckert, Hellmut; Camargo, Andrea S.S. de

    2015-01-01

    Rare earth (RE 3+ )-doped fluorophosphate glasses are among the most promising candidates for high-efficiency laser generation in the near-infrared spectral region. By proper choice of composition, these materials can combine the advantages of fluorides (low phonon energies, low refractive indices, extensive optical window, low hygroscopicity) and of oxides (high chemical and mechanical stability and high dopant solubility), resulting in enhancement of the RE 3+ emissive properties. In this work, we present the synthesis and structural/spectroscopic investigation of new glasses with composition 25BaF 2 25SrF 2 (30-x)Al(PO 3 ) 3 xAlF 3 (20-z)YF 3 :zREF 3 , where x = 20 or 15, RE = Er 3+ and/or Yb 3+ , z = 0.25–5.0 mol%. Results indicate considerable improvement of the emissive properties of both ions when compared to phosphate or even other fluorophosphate host compositions. Long excited state lifetimes (τ = 10 ms for the Er 3+ level 4 I 13/2 , and τ = 1.3 ms for the Yb 3+ level 2 F 5/2 ) imply high fluorescence quantum efficiencies η (up to 85% for both ions). Structural characterization by Raman and multinuclear solid state NMR spectroscopies indicate that the metaphosphate-type chain structure of the Al(PO 3 ) 3 vitreous framework is partially depolymerized and dominated by Q (0) and Q (1) units crosslinked by six-coordinate Al species. As revealed by 27 Al{ 31 P} rotational echo double resonance (REDOR) NMR results the average local aluminum environment of the x = 20 sample comprises 1.6 phosphate and 4.4 fluoride species. These results indicate a clear bonding preference between aluminum and phosphorus, which is consistent with the desired dominance of fluoride species in the local environment of the rare earth and alkaline earth atoms in these glasses. - Highlights: • New fluorophosphate glass composition with excellent photophysical properties. • Detailed structural insights by multinuclear solid state NMR. • Rare earth bonding preference to

  17. Gold nanoparticles assisted surface enhanced Raman scattering and luminescence of Er{sup 3+} doped zinc–sodium tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Ghoshal, S.K.; Awang, Asmahani, E-mail: asmahani_awang@yahoo.com; Sahar, M.R.; Arifin, R.

    2015-03-15

    nanoparticles embedded Er{sup 3+}-doped zinc–sodium tellurite glasses with varying concentration of Au NPs have been synthesized. • Glasses are evidenced to possess a good thermal stability with ΔT higher than 100 °C. • SPR from gold NPs exerts prominent enhancement in up-conversion emission intensity. • Excitation of surface plasmon induced the Raman enhancement.

  18. Highly matched spectrum needed for photosynthesis in Ce{sup 3+}/Er{sup 3+}/Yb{sup 3+} tri-doped oxyfluoride glass ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Weirong; Gao, Huiping [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China); Mao, Yanli, E-mail: ylmao@henu.edu.cn [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2015-11-05

    A series of oxyfluoride glass ceramics containing CaF{sub 2} nano-crystals tri-doped with Ce{sup 3+}/Er{sup 3+}/Yb{sup 3+} ions were prepared by high temperature melting method and subsequent heat treatment. The structural properties were examined by X-ray diffraction measurements. The absorption, excitation, and emission spectra of the glass ceramics were investigated. Difference in erbium emission spectra between glass and glass ceramics had been studied. The emission bands originating from the {sup 4}F{sub 9/2} state of Er{sup 3+} were enhanced when the CaF{sub 2} nano-crystal created. By down-converting the ultraviolet wavelength region (280∼400 nm) light and up-converting the near-infrared wavelength region (900∼1100 nm) light, the glass ceramics can also emit strong reddish orange emission. The emission spectra consisting of bluish violet (400∼500 nm) and reddish orange (640∼680 nm) bands match well with the action spectrum of photosynthesis and absorption spectra of chlorophylls. Our materials will be favored to promote the development of glass greenhouses for green plant. - Highlights: • Ce{sup 3+}/Er{sup 3+}/Yb{sup 3+} tri-doped oxyfluoride glass ceramics were prepared by high temperature melting method. • 668 nm red emission was obtained under 320 nm, 380 nm and 980 nm excitation, respectively. • The emission of samples matched well with the spectrum for photosynthesis.

  19. Thermoluminescence and optically stimulated luminescence properties of nanocrystalline Er3+ and Yb3+ doped Y3Al5O12 exposed to β-rays

    International Nuclear Information System (INIS)

    RodrIguez, R A; Rosa, E de la; Salas, P; Melendrez, R; Barboza-Flores, M

    2005-01-01

    The thermoluminescence (TL) and optically stimulated luminescence (OSL) characterization of Er 3+ and Yb 3+ doped Y 3 Al 5 O 12 nanocrystalline samples prepared by the precipitation process and exposed to β-rays are discussed. The TL as well as the OSL were two orders of magnitude higher in Er 3+ doped than in Yb 3+ specimens. The charge trapping and the radiative thermally stimulated recombination processes in Y 3 Al 5 O 12 : Er 3+ involve four trapping states at 166, 243, 342 and 424 deg. C, but just two trapping levels at 219 and 413 deg. C for Y 3 Al 5 O 12 : Yb 3+ at a heating rate of 10 deg. C s -1 . The photostimulation with 470 nm light causes in both phosphors a radiative recombination of the optically free charge carriers belonging to the same trapping states. The TL and the OSL as a function of radiation dose behaviour were linear in the 10-100 Gy dose range. The results provide evidence of the potential uses of these materials in radiation storage and dosimeter devices

  20. Energy transfer characteristics of silicate glass doped with Er{sup 3+}, Tm{sup 3+}, and Ho{sup 3+} for ∼2 μm emission

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ming; Liu, Xueqiang [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Guo, Yanyan [College of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Hu, Lili [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Zhang, Junjie [College of Materials Science and Engineering, China Jiliang University, Hangzhou 310 018 (China)

    2013-12-28

    A Er{sup 3+}/Tm{sup 3+}/Ho{sup 3+} tri-doped silicate glass with good thermal stability is prepared by melt-quenching method. Efficient ∼2 μm emission is observed under 808 nm laser excitation. It is found that the 2.0 μm emission of Ho{sup 3+} can be enhanced under the excitation at 808 nm by incorporating Er{sup 3+} and Tm{sup 3+}. Based on the measurement of absorption spectra, the Judd–Ofelt intensity parameters, radiation emission probability, and branching ratio are calculated to evaluate the spectroscopic properties simultaneously. The maximum value of emission cross section of Ho{sup 3+} is 3.54 × 10{sup −21} cm{sup 2} at 2008 nm. Additionally, the phonon assistance and the micro-parameters in the energy transfer process are quantitatively analyzed by using Dexter model. The energy transfer coefficient from Tm{sup 3+} to Ho{sup 3+} can reach as high as 21.44 × 10{sup −40} cm{sup 6}/s, respectively. The emission property together with good thermal property indicates that Er{sup 3+}/Tm{sup 3+}/Ho{sup 3+} tri-doped silicate glass is a potential kind of laser glass for efficient 2 μm laser.

  1. Red shift of near band edge emission in cerium implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar

    2009-01-01

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  2. Red shift of near band edge emission in cerium implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

    2009-02-21

    Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

  3. Optical gain at 1.53 {mu}m in Er{sup 3+}-Yb{sup 3+} co-doped porous silicon waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia)], E-mail: najar.adel@laposte.net; Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Lorrain, N.; Haesaert, S. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 El Manar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France)

    2008-01-15

    Erbium-ytterbium (Er-Yb)-co-doped porous silicon planar waveguides were prepared from P{sup +}-type (1 0 0) oriented silicon wafer. Erbium and ytterbium ions were electrochemically introduced into the porous structure of the waveguide core. The doping profiles of erbium and ytterbium ions were determined by EDX analysis performed on sample cross-section. The mean concentration in the guiding layer is of about 1 x 10{sup 20} cm{sup -3}. The refractive indices were measured from co-doped porous silicon and undoped waveguides after the thermal treatments. The photoluminescence (PL) peak of optically activated erbium ions at 1.53 {mu}m was recorded. The PL enhancement is the result of the energy transfer from the excited state of Yb to the state of Er. Optical losses at 1.55 {mu}m were measured on these waveguides and were of about 2 dB/cm. An internal gain at 1.53 {mu}m of 5.8 dB/cm has been measured with a pump power of 65 mW at 980 nm.

  4. Bottom-up synthesis of up-converting submicron-sized Er{sup 3+}-doped LiNbO{sub 3} particles

    Energy Technology Data Exchange (ETDEWEB)

    Jardiel, T., E-mail: jardiel@icv.csic.es [Departamento de Electroceramica, Instituto de Ceramica y Vidrio-CSIC, Kelsen 5, 28049 Madrid (Spain); Caballero, A.C. [Departamento de Electroceramica, Instituto de Ceramica y Vidrio-CSIC, Kelsen 5, 28049 Madrid (Spain); Marin-Dobrincic, M.; Cantelar, E.; Cusso, F. [Departamento de Fisica de Materiales, C-04, Facultad de Ciencias, Universidad Autonoma de Madrid, Avda. Francisco Tomas y Valiente 7, 28049 Madrid (Spain)

    2012-08-15

    A new and simple wet chemical synthesis method is proposed to prepare submicron-sized Erbium-doped LiNbO{sub 3} powders. The synthesis procedure comprises the co-precipitation of lithium and erbium ions from common precursors and their subsequent reaction with niobium ethoxide. A systematic characterization by means of X-Ray Diffraction (XRD), X-ray Fluorescence (XRF), Inductively Coupled Plasma (ICP-OES), Atomic Absorption (AAS), Field Emission Scanning Electron Microscopy (FE-SEM), as well as by the examination of the luminescence properties, evidence that with this method a congruent Er{sup 3+}-doped LiNbO{sub 3} single phase material can be obtained without using complex and time-consuming processing steps. The synthesized powders exhibit efficient IR to VIS up-conversion emissions under 974 nm pumping. -- Highlights: Black-Right-Pointing-Pointer A novel chemical route to the preparation of LiNbO{sub 3} powders has been developed. Black-Right-Pointing-Pointer This process avoids complex and time-consuming processing steps. Black-Right-Pointing-Pointer A congruent Er{sup 3+}-doped LiNbO{sub 3} single phase material can be obtained by this way. Black-Right-Pointing-Pointer The luminescence properties are the expected for this composition.

  5. GaN based nanorods for solid state lighting

    Energy Technology Data Exchange (ETDEWEB)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  6. Structural and optical studies of Er3+-doped alkali/alkaline oxide containing zinc boro-aluminosilicate glasses for 1.5 μm optical amplifier applications

    Science.gov (United States)

    Kaky, Kawa M.; Lakshminarayana, G.; Baki, S. O.; Lira, A.; Caldiño, U.; Meza-Rocha, A. N.; Falcony, C.; Kityk, I. V.; Taufiq-Yap, Y. H.; Halimah, M. K.; Mahdi, M. A.

    2017-07-01

    In the present work, we report on the optical spectral properties of Er3+-doped zinc boro-aluminosilicate glasses with an addition of 10 mol % alkali/alkaline modifier regarding the fabrication of new optical materials for optical amplifiers. A total of 10 glasses were prepared using melt-quenching technique with the compositions (40-x)B2O3 - 10SiO2 - 10Al2O3 - 30ZnO - 10Li2O - xEr2O3 and (40-x)B2O3 - 10SiO2 - 10Al2O3 - 30ZnO - 10MgO - xEr2O3 (x = 0.1, 0.25, 0.5, 1.0, and 2.0 mol %). We confirm the amorphous-like structure for all the prepared glasses using X-ray diffraction (XRD). To study the functional groups of the glass composition after the melt-quenching process, Raman spectroscopy was used, and various structural units such as triangular and tetrahedral-borates (BO3 and BO4) have been identified. All the samples were characterized using optical absorption for UV, visible and NIR regions. Judd-Ofelt (JO) intensity parameters (Ωλ, λ = 2, 4 and 6) were calculated from the optical absorption spectra of two glasses LiEr 2.0 and MgEr 2.0 (doped with 2 mol % of Er3+). JO parameters for LiEr 2.0 and MgEr 2.0 glasses follow the trend as Ω6>Ω2>Ω4. Using Judd-Ofelt intensity parameters, we obtained radiative probability A (S-1), branching ratios (β), radiative decay lifetimes τrad (μs) of emissions from excited Er+3 ions in LiEr 2.0 and MgEr 2.0 to all lower levels. Quantum efficiency (η) of 4I13/2 and 4S3/2 levels for LiEr 2.0 and MgEr 2.0 with and without 4D7/2 level was calculated using the radiative decay lifetimes τrad. (μs) and measured lifetimes τexp. (μs). We measured the visible photoluminescence under 377 nm excitation for both LiEr and MgEr glass series within the region 390-580 nm. Three bands were observed in the visible region at 407 nm, 530 nm, and 554 nm, as a result of 2H9/2 → 4I15/2, 2H11/2 → 4I15/2 and 4S3/2 → 4I15/2 transitions, respectively. Decay lifetimes for emissions at 407 nm, 530 nm, and 554 nm were measured and they show

  7. Upconversion Properties of the Er-Doped Y2O3, Bi2O3 and Sb2O3 Nanoparticles Fabricated by Pulsed Laser Ablation in Liquid Media

    International Nuclear Information System (INIS)

    Zamiri Reza; Bahari-Poor Hamid-Reza; Zakaria Azmi; Jorfi Raheleh; Zamiri Golnoush; Rebelo Avito; Omar Akrajas Ali

    2013-01-01

    Er-doped Y 2 O 3 , Bi 2 O 3 and Sb 2 O 3 nanoparticles are synthesized using pulsed laser ablation in a liquid. Ceramic targets of Y 2 O 3 :Er 3+ , Bi 2 O 3 :Er 3+ and Sb 2 O 3 :Er 3+ for ablation process are prepared by standard solid-state reaction technique and ablation is carried out in 5-ml distilled water using nanosecond Q-switched Nd:YAG laser. The morphology and size of the fabricated nanoparticles are evaluated by transmission electron microscopy and the luminescence emission properties of the prepared samples are investigated under different excitation wavelengths

  8. Highly-efficient mid-infrared CW laser operation in a lightly-doped 3 at.% Er:SrF2 single crystal.

    Science.gov (United States)

    Su, Liangbi; Guo, Xinsheng; Jiang, Dapeng; Wu, Qinghui; Qin, Zhipeng; Xie, Guoqiang

    2018-03-05

    3 at.% Er:SrF 2 laser crystals with high optical quality were successfully grown using the temperature gradient technique (TGT). The intense mid-infrared emission was observed around 2.7 μm with excitation by a 970 nm LD. Based on the Judd-Ofelt theory, the emission cross-sections of the 4 I 13/2 - 4 I 11/2 transition were calculated by using the Fuchtbauer-Ladenburg (FL) method. Efficient continuous-wave laser operation at 2.8 µm was achieved with the lightly-doped 3 at.% Er:SrF 2 crystal pumped by a 970 nm laser diode. The laser output power reached up to 1.06 W with a maximum slope efficiency of 26%.

  9. Structural, thermal, and optical properties of Er3+/Yb3+ co-doped oxyhalide tellurite glasses, glass-ceramics and ceramics

    International Nuclear Information System (INIS)

    Joshi, C.; Rai, R.N.; Rai, S.B.

    2012-01-01

    Glass-ceramics and ceramics containing nano-crystals of different phases doped with Er 3+ /Yb 3+ ions have been successfully prepared by heat treatment of the precursor oxyhalide glasses synthesized by the melt-quench method. X-ray diffraction patterns and transmission electron microscopy (TEM) images verify the precipitation of nano-crystals. Emission of Er 3+ enhances several times when Yb 3+ ion is added with the matrix. The Stark splitting and the intensity of different emission bands increase to a great extent when we approach to ceramics from glasses via glass-ceramics. The intensity of the blue and green emission bands increases much faster than the red and NIR emission bands. Intense upconversion emission observed by the naked eye has been quantified in terms of standard chromaticity diagram (CIE). Power dependence study shows that the upconversion of NIR radiation to visible radiation takes place mainly via photon avalanche (PA) process.

  10. Ag2O dependent up-conversion luminescence properties in Tm3+/Er3+/Yb3+ co-doped oxyfluorogermanate glasses

    International Nuclear Information System (INIS)

    Hu, Yuebo; Qiu, Jianbei; Song, Zhiguo; Zhou, Dacheng

    2014-01-01

    Up-conversion (UC) luminescence properties of Ag/Tm 3+ /Er 3+ /Yb 3+ co-doped oxyfluorogermanate glasses have been studied to assess the effective role of silver nanoparticles as a sensitizer for Tm 3+ and Er 3+ ions. The X-ray diffraction patterns obtained in this work do not reveal any crystalline phase in the glass. However, the absorption spectra reveal that surface plasmons resonance band of Ag undergoes a distinct split with two maxima and a very broad absorption peak with a background that extends toward the near infrared (NIR) with the increasing of Ag 2 O added concentration. Transmission electron microscope images confirm that silver nanoparticles have been precipitated from matrix glasses and show their distribution, size, and shapes. In addition, changes in UC luminescence intensity of four emission bands 476, 524, 546, and 658 nm corresponding to 1 G 4 → 3 H 6 (Tm 3+ ), ( 2 H 11/2 , 4 S 3/2 ) → 4 I 15/2 (Er 3+ ), and 4 F 9/2 → 4 I 15/2 (Er 3+ ) transitions, respectively, as a function of silver addition to the base composition have been measured under 980 nm excitation. It is confirmed that Ag 2 O added concentration plays an important role in increasing the UC luminescence intensity; however, further increase in Ag 2 O added concentration reduces the intensity

  11. 2.05 xB5m emission properties and energy transfer mechanism of germanate glass doped with Ho3+, Tm3+, and Er3+

    Science.gov (United States)

    Xu, Rongrong; Wang, Meng; Tian, Ying; Hu, Lili; Zhang, Junjie

    2011-03-01

    A new GeO2-Ga2O3-Na2O-BaO-La2O3 germanate glass doped with Ho2O3, Tm2O3, and Er2O3 has been investigated for application as a laser material at the 2 μm region. The spectroscopic properties and energy transfer mechanisms of Ho3+ sensitized by Tm3+ and Er3+ are analyzed. Based on the measurement of absorption spectra, the Judd-Ofelt intensity parameters, radiation emission probability, branching ratio, and lifetime of Ho3+ are calculated to evaluate the spectroscopic properties. The maximum value of emission cross section of Ho3+ around 2.05 μm is 8.003×10-21 cm2, which indicates that the germanate glass may provide high gain as a good medium in high-power level laser system. It is also found that the 2.05 μm emission of Ho3+:5I7→5I8 can be greatly enhanced by adding the proper amount of Er2O3 and Tm2O3 under excitation at 808 nm. With the large energy transfer coefficient, the high efficient energy transfer process among Ho3+, Tm3+, and Er3+ ions is proven.

  12. Laser-induced, Er3+ trace-sensitized red-to-blue photon avalanche up-conversion in Tm3+-doped LiKYF5 crystals

    International Nuclear Information System (INIS)

    Jouart, J P; Bouffard, M; Boulma, E; Diaf, M; Vojtenko, E N; Khaidukov, N M

    2005-01-01

    The results for a spectroscopic study demonstrating that the excited-state absorption(ESA) of Tm 3+ :LiKYF 5 at 648nm is dependent on the purity of starting materials used for synthesizing the crystal are presented. The Er 3+ -free LiKYF 5 crystal doped with Tm 3+ is transparent at 648 nm because the majority of the Tm 3+ ions are in the ground 3 H 6 state whatever the selective excitation intensity, whereas the Er 3+ -contaminated crystal is semi-transparent. In the second case a small increase of the excitation intensity above a certain threshold produces an abrupt enhancement of the ESA process at 648 nm as well as the blue and the green emissions that are detected. All three processes, namely ESA corresponding to the 3 F 4 (2) → 1 G 4 (2) Tm 3+ transition, the blue emission due to the 1 G 4 → 3 H 6 Tm 3+ transition and the green emission from the 4 S 3/2 Er 3+ level, are sensitized with the Tm 3+ → Er 3+ → Tm 3+ energy transfers which promote the conversion of Tm 3+ ions from the 1 G 4 and the 3 H 4 states to the metastable 3 F 4 state

  13. Er{sup 3+}-doped Y{sub 2}O{sub 3} obtained by polymeric precursor: Synthesis, structure and upconversion emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Perrella, Rafael V.; Santos, Daniela P. dos [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João del-Rei, MG (Brazil); Poirier, Gael Y. [Instituto de Ciência e Tecnologia, Universidade Federal de Alfenas, Cidade Universitária, 37715400 Poços de Caldas, MG (Brazil); Góes, Márcio S. [Universidade Federal da Integração Latino-Americana (UNILA), Av. Tancredo Neves, 6731 – Bloco 4, Cx P. 2044, CEP: 85867-970 Foz do Iguaçu, PR (Brazil); Ribeiro, Sidney José L. [Instituto de Química, UNESP, P.O. Box 355, 14800-970 Araraquara, SP (Brazil); Schiavon, Marco A. [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João del-Rei, MG (Brazil); and others

    2014-05-01

    The relentless pursuit for materials containing rare earth ions with photoluminescent properties has led to several studies with applications in the development of new technologies. The main focus of this work is the preparation of Er{sup 3+}-doped polycrystalline Y{sub 2}O{sub 3} with photoluminescent properties using PEG as an organic precursor and heat-treated at different temperatures. The methodology used in this synthesis is highly attractive due to its high feasibility for improved technology and low cost for preparing materials. The behavior of the viscous resin has been evaluated and the final compounds exhibited the formation of a cubic polycrystalline phase, which is able to support variations in Er{sup 3+} doping concentrations up to 10 mol%, without significant changes in the polycrystalline parameters. The values of the nanocrystallite size calculated by Scherrer's equation showed direct dependence on the heat-treatment temperature as well as the Er{sup 3+} concentration. Intense emission in the visible region under excitation at 980 nm was attributed to an upconversion phenomenon assigned to the intraconfigurational f–f transitions of Er{sup 3+} ions. The upconversion mechanism was investigated and it was demonstrated that the higher intense emission in the red region in comparison to the emission in the green region is related to the crystallite size. The studies about the intensity showed the dependence of upconversion emission of power source, indicating that two-photon are responsible for the green and red photoluminescence. These polycrystalline materials exhibit properties that make them promising for use in solar energy systems, C-telecom band or solid-state laser devices. - Highlights: • Intense red upconversion emission. • Very easy way to prepare the material. • Potential application in solar cells. • Application for C-telecom band.

  14. Effects of Er{sup 3+} and Yb{sup 3+} doping on structural and non-linear optical properties of LiNaSO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Palmero, I.C. [Departamento de Fisica Basica, Electronica y Sistemas, Universidad de La Laguna, E-38200, San Cristobal de la Laguna, Santa Cruz de Tenerife (Spain); Gonzalez-Silgo, C. [Departamento de Fisica Fundamental II, Electronica y Sistemas, Universidad de La Laguna, E-38200, San Cristobal de la Laguna, Santa Cruz de Tenerife (Spain); Torres, M.E. [Departamento de Fisica Basica, Electronica y Sistemas, Universidad de La Laguna, E-38200, San Cristobal de la Laguna, Santa Cruz de Tenerife (Spain); Marrero-Lopez, D. [Departamento de Quimica Inorganica, Electronica y Sistemas, Universidad de La Laguna, E-38200, San Cristobal de la Laguna, Santa Cruz de Tenerife (Spain); Rivera-Lopez, Fernando [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna, E-38200, San Cristobal de la Laguna, Santa Cruz de Tenerife (Spain)], E-mail: frivera@ull.es; Haro-Gonzalez, P. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna, E-38200, San Cristobal de la Laguna, Santa Cruz de Tenerife (Spain); Solans, X. [Departament de Cristallografia, Universitat de Barcelona, E-08028, Barcelona (Spain)

    2008-05-15

    We have characterized LiNaSO{sub 4} crystals doped with rare earth (RE) (Er{sup 3+} and Yb{sup 3+}) to give new insights about their structural properties relations. The samples were analyzed by X-ray single crystal diffraction and differential thermal analysis. The non-centrosymmetry was confirmed second-harmonic generation. Inductively coupled plasma (ICP) and emission experiments confirmed the nominal concentrations of the REs. Crystallographic data and two empirical models were employed to understand the structural modifications by substitution of the Na site which reduces, monotonically, the non-linear optical coefficients and the temperature of the phase transition in these crystals.

  15. A tunable narrow-line-width multi-wavelength Er-doped fiber laser based on a high birefringence fiber ring mirror and an auto-tracking filter

    Science.gov (United States)

    Jia, Xiu-jie; Liu, Yan-ge; Si, Li-bin; Guo, Zhan-cheng; Fu, Sheng-gui; Kai, Gui-yun; Dong, Xiao-yi

    2008-01-01

    A novel multi-wavelength erbium-doped fiber laser operating in C-band is proposed and successfully demonstrated. The wavelength interval between the wavelengths is about 0.22 nm. The 3 dB bandwidth of the laser is about 0.012 nm, and the output power reaches 4.8 mW. By using a high birefringence fiber ring mirror (HiBi-FLM) and a tunable FBG, the laser realizes switchable and tunable characteristic. The mode hopping can be effectively prevented. Moreover, this laser can improve wavelength stability significantly by taking advantage of an un-pumped Er3+-doped fiber at the standing-wave section. The laser can operate in stable narrow-line-width with single-, dual-wavelength, and unstable triple-wavelength output at room temperature.

  16. Optical Amplification at 1525 nm in BaYF5: 20% Yb3+, 2% Er3+ Nanocrystals Doped SU-8 Polymer Waveguide

    Directory of Open Access Journals (Sweden)

    Pengcheng Zhao

    2014-01-01

    Full Text Available We demonstrated optical amplification in BaYF5: 20% Yb3+, 2% Er3+ (BYF nanocrystals doped polymer waveguide. BYF nanocrystals with an average size of ∼13 nm were synthesized by a high-boiling solvent process. Intense 1.53 μm fluorescence was obtained in the nanocrystals under excitation at 980 nm. An optical polymer waveguide was fabricated by using BYF nanocrystals doped SU-8 polymer as the core material. A relative optical gain of ∼10.4 dB at 1525 nm was achieved in a 1.1 cm long waveguide for an input signal power of ∼0.09 mW and a pump power of ∼212 mW.

  17. Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

    Science.gov (United States)

    Zhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min

    2015-01-01

    We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm-3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

  18. Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN5/(GaN1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

    Directory of Open Access Journals (Sweden)

    Hong-xia Zhong

    2015-01-01

    Full Text Available We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN5/(GaN1 superlattice (SL, a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3 complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm−3 at room temperature in (AlN5/(GaN1 SL. Our results prove that nMgGa-ON (n = 2,3 δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

  19. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    Science.gov (United States)

    Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  20. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  1. Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

    International Nuclear Information System (INIS)

    Tan Yang; Chen Feng; Hu Lili; Xing Pengfei; Chen Yanxue; Wang Xuelin; Wang Keming

    2007-01-01

    This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er 3+ /Yb 3+ co-doped phosphate glass. The He + ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar + ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er 3+ /Yb 3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation

  2. Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

    Science.gov (United States)

    Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

    2018-04-02

    Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

  3. Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.

    Science.gov (United States)

    Guo, Yanyan; Li, Ming; Hu, Lili; Zhang, Junjie

    2012-01-15

    The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high spontaneous transition probability A (65.26 s(-1)) and large 2.7 μm emission cross section σ(em) (9.53×10(-21) cm2) corresponding to the stimulated emission of Er3+:4I11/2→4I13/2 transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of Er3+ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

  4. Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

    2010-06-30

    Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

  5. Preparation and dielectric properties of Dy, Er-doped BaZr0.2Ti0.8O3 ceramics

    International Nuclear Information System (INIS)

    Hao Sue; Sun Liang; Huang Jinxiang

    2008-01-01

    Ba(Zr x Ti 1-x )O 3 nanopowders and ceramics with different Zr/Ti ratios of 1:9; 2:8; 2.5:7.5; 3.5:6.5 and 4:6 (x = 0.1, 0.2, 0.25, 0.35, 0.4) have been prepared by sol-gel technology using inorganic zirconium as raw materials, and Zr/Ti ratio of 2:8 is determined as the best one according to the measurements of dielectric properties. So the modified Ba(Zr 0.2 ,Ti 0.8 )O 3 ceramics doped by Dy and Er (the additive content is 0.10%, 0.15%, 0.20%, 0.30% and 0.50% molar ratio, respectively) have been prepared, and the effects of rare earth on the microstructure and dielectric properties of Ba(Zr 0.2 ,Ti 0.8 )O 3 ceramics have been studied. The experimental results show that the effect of Er is better than that of Dy in improving the dielectric properties of BaZr 0.2 Ti 0.8 O 3 ceramics. When the content of Er is 0.15 mol%, the dielectric constant is the highest of 12767, while the dielectric loss is lowered to 0.011; the frequency stabilities and the temperature dependence are also better, which is suitable for application in condenser field

  6. Spectroscopic properties of Er3+/Yb3+ Co-doped zinc boro-tellurite glasses for 1.5 xB5m broadband optical amplifiers

    Science.gov (United States)

    Suthanthirakumar, P.; Karthikeyan, P.; Vijayakumar, R.; Marimuthu, K.

    2015-06-01

    A new series of Er3+/Yb3+ co-doped Zinc boro-tellurite glasses with the chemical composition (40-x-y)B2O3+ 25TeO2+20ZnO+15BaO+xYb2O3+yEr2O3 (where x = 0.1, 0.5, 1 and 3; y =1 in wt %) were prepared by melt quenching technique and their spectroscopic behavior were studied through UV-Vis-NIR absorption and NIR luminescence measurements. The bonding parameters (β ¯ and δ) and Judd-Ofelt (JO) intensity parameters Ωλ (λ=2, 4 and 6) have been calculated from the band positions of the absorption spectra. A broad near-infrared emission band at 1540 nm with a full width at half maximum around 80 nm was observed from the NIR luminescence spectra by monitoring an excitation at 980 nm. The absorption cross-section and emission cross-section for the4I13/2→4I15/2 transition of the Er3+ ions were also determined using McCumber theory and the results were discussed and reported.

  7. Judd–Ofelt modeling, emission lifetimes and non-radiative relaxation for Er{sup 3+} doped Cs{sub 2}NaYF{sub 6} elpasolite crystals

    Energy Technology Data Exchange (ETDEWEB)

    Loiko, P.A. [ITMO University, 49 Kronverkskiy pr., St. Petersburg 197101 (Russian Federation); Vilejshikova, E.V. [Center for Optical Materials and Technologies (COMT), Belarusian National Technical University, 65/17 Nezavisimosti Ave., Minsk 220013 (Belarus); Khaidukov, N.M. [N.S. Kurnakov Institute of General and Inorganic Chemistry, 31 Leninskii Prospekt, Moscow 119991 (Russian Federation); Méndez-Ramos, J. [Departamento de Física, Universidad de La Laguna, La Laguna 38206, Tenerife (Spain); Mateos, X. [Física i Cristallografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades, c/ Marcellí Domingo, s/n., Tarragona 43007 (Spain); Yumashev, K.V., E-mail: k.yumashev@tut.by [Center for Optical Materials and Technologies (COMT), Belarusian National Technical University, 65/17 Nezavisimosti Ave., Minsk 220013 (Belarus)

    2017-05-15

    Absorption and emission properties of Er{sup 3+} ions in a cubic elpasolite crystal, Cs{sub 2}NaYF{sub 6}, are modeled within the Judd-Ofelt (J-O) theory. The J-O intensity parameters have been determined: Ω{sub 2} = 0.665, Ω{sub 4} = 0.217 and Ω{sub 6} = 0.029 ×10{sup –20} cm{sup 2}. The elpasolite structure of Cs{sub 2}NaYF{sub 6} containing isolated [YF{sub 6}] polyhedra allows high Er{sup 3+} doping levels up to 100 at% without considerable concentration quenching of luminescence and exceptionally long lifetimes of the excited states (in particular, the radiative lifetimes of the {sup 4}I{sub 13/2} and {sup 4}I{sub 11/2} states are as long as 36.7 ms and 113.4 ms, respectively). It also shows weak non-radiative relaxation. Stimulated-emission cross-sections have been determined for the Er{sup 3+} transitions in Cs{sub 2}NaYF{sub 6} at ~2.7 and ~1.5 μm as well as in the visible spectral range.

  8. Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO{sub 2}:Er doped with Si-nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Wojdak, M., E-mail: m.wojdak@ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Jayatilleka, H. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario, Canada M5S 3G4 (Canada); Shah, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Kenyon, A.J., E-mail: t.kenyon@ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Gourbilleau, F.; Rizk, R. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Université de Caen, 14050 CAEN cedex (France)

    2013-04-15

    During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO{sub 2}:Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate. -- Highlights: ► We studied photoluminescence of Er in SiO{sub 2} thin films doped with Si nanoclusters. ► Presence of ITO layer on the top enhances photoluminescence decay rate of Er. ► The effect depends on the thickness of active film. ► Radiative rate change in proximity of ITO layer was calculated theoretically. ► The calculation results are compared with the experiment and discussed.

  9. Enhancing upconversion emission of Er, Yb co-doped highly transparent YF3 films by synergistic tuning nano-textured morphology and crystallinity

    International Nuclear Information System (INIS)

    Qu, Ming-Hao; Wang, Ru-Zhi; Chen, Yan; Zhang, Ying; Li, Kai-Yu; Zhou, Hua; Yan, Hui

    2014-01-01

    Highly transparent Er, Yb codoped YF 3 upconversion films were successfully prepared by electron beam deposition method. The effects of the substrate temperature on the morphology, crystallinity and emission characteristics of Er, Yb codoped YF 3 films were studied carefully. It was found that the morphology and crystallinity varied from smooth amorphous to root-intertwined polycrystalline structure with the substrate temperature increase. Besides, the emission characteristics of the films can be modulated by the synergy of their surface morphologies and crystallinities. Remarkably, a large enhancement of the upconversion emission, up to five decades while only an insignificant decrease of the optical transmittance (10% at most), was achieved by forming root-intertwined polycrystalline structures. These highly transparent upconversion films may have good potential for enhancing the conversion efficiency of wide band-gap solar cells. -- Highlights: • Er, Yb co-dopedYF 3 upconversion films have been successfully prepared. • The upconversion property can be modulated by morphology and crystallinity. • The upconversion transparent YF 3 films are promising for solar cells applications

  10. Determination of carrier diffusion length in GaN

    Science.gov (United States)

    Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

    2015-01-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

  11. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    Directory of Open Access Journals (Sweden)

    Shougui Ning

    2018-02-01

    Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  12. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  13. Spectroscopic and structural properties of polycrystalline Y{sub 2}Si{sub 2}O{sub 7} doped with Er{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Marciniak, L., E-mail: L.Marciniak@int.pan.wroc.pl [Institute for Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Hreniak, D.; Strek, W. [Institute for Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Piccinelli, F., E-mail: fabio.piccinelli@univr.it [Laboratorio di Chimica dello Stato Solido, DB, Università di Verona and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Speghini, A.; Bettinelli, M. [Laboratorio di Chimica dello Stato Solido, DB, Università di Verona and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Miritello, M., E-mail: maria.miritello@ct.infn.it [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Lo Savio, R.; Cardile, P.; Priolo, F. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy)

    2016-02-15

    Powders of yttrium disilicate (Y{sub 2}Si{sub 2}O{sub 7}) doped with Er{sup 3+} have been prepared by the sol–gel method. The structure of the obtained powders has been determined. Room temperature emission spectra have been recorded and excited state decay profiles have been analyzed. Differences between the spectroscopic properties of Er{sup 3+} in monoclinic α-Y{sub 2}Si{sub 2}O{sub 7} (space group P-1) and β-Y{sub 2}Si{sub 2}O{sub 7} (space group C2/m) polymorphs have been investigated and shown. The significant broadening of the emission spectra recorded for the α phase compared to the one for the β phase was discussed in terms of higher number of Y{sup 3+} sites (4) present in the α phase with respect to only one Y{sup 3+} site in the case of β phase. The higher value of the luminescence decay time of β phase (11.2 ms) compared to the α phase (8.5 ms) is associated with the higher site symmetry of β-Y{sub 2}Si{sub 2}O{sub 7}. Moreover it was found that Er{sup 3+} concentration affects the shape of the {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} emission band. It results in changes of the relative emission intensities of peaks localized at 1527 nm and 1532 nm; this indicates changes of the Y{sup 3+} sites occupation on increasing the Er{sup 3+} concentration. The luminescence lifetime was observed to decrease with the increase of Er{sup 3+} concentration. The spectroscopic results have been compared with the ones relative to thin films of Y{sub 2}Si{sub 2}O{sub 7}:Er{sup 3+} with a similar composition. The lower value of the luminescence decay time observed for thin films compared to the powder of α phase was explained with the changes of the particles packing resulting in the change of the effective refractive index.

  14. Up-conversion monodispersed spheres of NaYF4:Yb3+/Er3+: green and red emission tailoring mediated by heating temperature, and greatly enhanced luminescence by Mn2+ doping.

    Science.gov (United States)

    Zhu, Qi; Song, Caiyun; Li, Xiaodong; Sun, Xudong; Li, Ji-Guang

    2018-04-09

    Submicron sized, monodispersed spheres of Mn2+, Yb3+/Er3+ and Mn2+/Yb3+/Er3+ doped α-NaYF4 were easily autoclaved from mixed solutions of the component nitrates and ammonium fluoride (NH4F), in the presence of EDTA-2Na. Detailed characterizations of the resultant phosphors were obtained using XRD, Raman spectroscopy, FE-SEM, HR-TEM, STEM, PLE/PL spectroscopy, and fluorescence decay analysis. Finer structure and better crystal perfection was observed at a higher calcination temperature, and the spherical shape and excellent dispersion of the original particles was retained at temperatures up to 600 °C. Under the 980 nm infrared excitation, the Yb3+/Er3+-doped sample (calcined at 400 °C) exhibits a stronger green emission centered at ∼524 nm (2H11/2 → 4I15/2 transition of Er3+) and a weaker red emission centered at ∼657 nm (4F9/2 → 4I15/2 transition of Er3+). A 200 °C increase in the temperature from 400 °C to 600 °C resulted in the dominant red emission originating from the 4F9/2 → 4I15/2 transition of Er3+, instead of the previously dominant green one. Mn2+ doping induced a remarkable more enhanced intensity at ∼657 nm and ∼667 nm (red emission area) than that at ∼524 nm and ∼546 nm (green emission area), because of the non-radiative energy transfer between Mn2+ and Er3+. However, a poor thermal stability was induced by Mn2+ doping. The observed upconversion luminescence of the samples calcined at 400 °C and 600 °C followed the two photon process and the four photon process, respectively.

  15. Effect of natural Fe{sub 3}O{sub 4} nanoparticles on structural and optical properties of Er{sup 3+} doped tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Widanarto, W. [Physics Study Program, Jenderal Soedirman University, Jl. dr. Soeparno 61 Purwokerto 53123 (Indonesia); Sahar, M.R., E-mail: m-rahim@dfiz2.fs.utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Johor Bahru, Skudai 81310 (Malaysia); Ghoshal, S.K.; Arifin, R.; Rohani, M.S.; Hamzah, K. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Johor Bahru, Skudai 81310 (Malaysia)

    2013-01-15

    Control doping of magnetic nanoparticles and its influence on optical and structural properties of tellurite glass is important from device perspectives. Natural Fe{sub 3}O{sub 4} nanoparticles obtained by extracting and ball milling iron sand, are incorporated in the Er{sup 3+} doped tellurite glasses having composition (80-x)TeO{sub 2}{center_dot}xFe{sub 3}O{sub 4}{center_dot}18ZnO{center_dot}1Li{sub 2}O{center_dot}1Er{sub 2}O{sub 3} (0{<=}x{<=}1.5) in mol% by melt quenching method at 850 Degree-Sign C. X-Ray diffraction spectra confirms the presence of iron nanoparticles with estimated sizes 18-70 nm and an amorphous structure of the samples. Thermal and optical characterizations are made using diffential thermal analysis, ultraviolet-visible and photoluminescence spectrocopies. It is found that the presence of nanoparticles changes color and thermal stability of the glasses, which is proved by increasing thermal stability factor from 118 to 132 Degree-Sign C. Absorption spectra consist of six peaks corresponding to different transition from ground state to the excited states in which the quench of the peak associated with {sup 4}F{sub 1/2} is attributed to the effect nanoparticles. Moreover, the shift in the absorption edge from {approx}400 to {approx}500 nm indicates a significant decrease of the optical energy band gap for both direct and indirect allowed transitions and a decrease in the Urbach energy as much as 0.116 eV is observed. The room temperature down-conversion luminescence spectra obtained under 500 nm excitation exhibit two strong peaks related to excited states {sup 4}S{sub 3/2} and {sup 4}F{sub 9/2} of Er{sup 3+} ions in the absence of nanoparticles. Furthermore, embedding nanoparticles into the glass not only make the peaks weaker but the second peak completely disappears. Interestingly, the emission bands of the Er{sup 3+} ion are quenched as concentration of the magnetic nanoparticles is increased.

  16. Utilization of IR laser pumped anti-Stokes emission of Er-Yb doped systems for identification of securities

    International Nuclear Information System (INIS)

    Kuzmin, A.N.; Ryabtsev, G.I.; Ketko, G.A.; Gorelenko, A.Yu.; Demidovich, A.A.; Strek, W.; Maruszewicz, K.; Deren, P.

    1996-01-01

    In this paper we present a utilization of anti-Stokes luminescence of Er-Yb systems for identification of securities. A simple method of detection of an up-conversion phenomenon in such system by means of IR laser operating in the region 960-1010 nm is proposed. (author)

  17. Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

    International Nuclear Information System (INIS)

    Cheah, S.F.; Lee, S.C.; Ng, S.S.; Yam, F.K.; Abu Hassan, H.; Hassan, Z.

    2015-01-01

    Porous gallium nitride (GaN) thin films with different surface morphologies and free carriers properties were fabricated from Si-doped GaN thin films using ultra-violet assisted electrochemical etching approach under various etching voltages. Fluctuation of luminescence signals was observed in the photoluminescence spectra of porous GaN thin films. Taking advantage of the spectral sensitivity of infrared attenuated total reflection spectroscopy on semiconductor materials, roles of free carriers and porous structure in controlling luminescence properties of GaN were investigated thoroughly. The results revealed that enhancement in luminescence signal is not always attained upon porosification. Although porosification is correlated to the luminescence enhancement, however, free carrier is the primary factor to enhance luminescence intensity. Due to unavoidable significant reduction of free carriers from Si-doped GaN in the porosification process, control of etching depth (i.e., thickness of porous layer formed from the Si-doped layer) is critical in fabricating porous GaN thin film with enhanced luminescence response. - Highlights: • Various pore morphologies with free carrier properties are produced by Si-doped GaN. • Free carriers are important to control the luminescence signal of porous GaN. • Enhancement of luminescence signal relies on the pore depth of Si-doped layer

  18. Effect of Er-doping on the structural and optical properties of Cd{sub 2}V{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Lozada-Morales, R.; Cid-Garcia, A.; Palomino-Merino, R. [Benemerita Universidad Autonoma de Puebla, Postgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Av. 14, San Claudio, Col. San Manuel, Puebla (Mexico); Lopez-Calzada, G.; Jimenez-Sandoval, S. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro. 76001 (Mexico); Zayas, Ma.E. [Departamento de Investigacion en Fisica de la Universidad de Sonora, Edificio 3I, Blvd. Edificio 5 E, Luis Encinas s/n, Col. Centro, 83000 Hermosillo, Sonora (Mexico); Zelaya-Angel, O. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados, P.O. Box 14-740, Mexico D. F. 07360 (Mexico); Carmona-Rodriguez, J. [Instituto Tecnologico Superior de Poza Rica, Calle Luis Donaldo Colosio S/N, Col. Arroyo del Maiz, C.P. 93230, Poza Rica, Veracruz (Mexico); Rubio-Rosas, E. [Centro de Vinculacion Universitaria, Av. 14, San Claudio, Col. San Manuel, Puebla (Mexico); Portillo-Moreno, O. [Facultad de Ciencias Quimicas, Av. 14, San Claudio, Col. San Manuel, Puebla (Mexico)

    2012-11-15

    The melt-quenching method was used to prepare two groups of samples using CdO and V{sub 2}O{sub 5} as starting materials. Taking into account that a crystalline-amorphous phase transition would be expected for the CdO-V{sub 2}O{sub 5} system, a first batch was prepared varying the proportions of CdO and V{sub 2}O{sub 5} in the intervals 60-95 and 40-5 wt%, respectively. With the aim of investigating the effect of erbium in the phase transition and crystalline quality of the first group of samples, a second batch was fabricated with the same proportions of CdO and V{sub 2}O{sub 5}, with the addition of 5 wt% of Er(NO{sub 3})5H{sub 2}O as source of Er{sup 3+} ions. It was found that crystalline or amorphous samples could be obtained depending on the relative concentrations of CdO and V{sub 2}O{sub 5}, and that the borderline between amorphous and crystalline samples was affected by the incorporation of Er. From X-ray diffraction, it was possible to identify the formation of the ternary compound Cd{sub 2}V{sub 2}O{sub 7} in the crystalline cases. The Raman and infrared bands in these samples were in agreement with the lattice modes of Cd{sub 2}V{sub 2}O{sub 7}. Additionally, an improvement in the crystalline quality of Cd{sub 2}V{sub 2}O{sub 7} was obtained for the Er-doped samples. The effect of the local environment around the Er{sup 3+} ions on the room temperature photoluminescence was also investigated for the amorphous and crystalline samples. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Photoluminescence properties of Er-doped Ge–In(Ga)–S glasses modified by caesium halides

    Czech Academy of Sciences Publication Activity Database

    Ivanova, Z.G.; Zavadil, Jiří; Kostka, P.; Djouama, T.; Reinfelde, M.

    2017-01-01

    Roč. 254, č. 6 (2017), č. článku 1600662. ISSN 0370-1972 Institutional support: RVO:67985882 Keywords : caesium halides * chalcohalide glasses * erbium doping * transmission spectroscopy * photoluminiscence Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass OBOR OECD: Ceramics Impact factor: 1.674, year: 2016

  20. Photoluminescence properties of Er-doped Ge–In(Ga)–S glasses modified by caesium halides

    Czech Academy of Sciences Publication Activity Database

    Ivanova, Z.G.; Zavadil, Jiří; Kostka, Petr; Djouama, T.; Reinfelde, M.

    2017-01-01

    Roč. 254, č. 6 (2017), č. článku 1600662. ISSN 0370-1972 Institutional support: RVO:67985891 Keywords : caesium halides * chalcohalide glasses * erbium doping * transmission spectroscopy * photoluminiscence Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass OBOR OECD: Ceramics Impact factor: 1.674, year: 2016

  1. Advances in spectral conversion for photovoltaics: up-converting Er3+ doped YF3 nano-crystals in transparent glass ceramic

    Science.gov (United States)

    Marques-Hueso, Jose; Chen, Daqin; MacDougall, Sean K. W.; Wang, Yuansheng; Richards, Bryce S.

    2011-09-01

    Up- and down-conversion (UC, DC) constitute two singular routes to achieve improved energy harvesting of sunlight by changing its shape of the solar spectrum. To obtain a significant conversion rate two main challenges have to be overcome: i) the excited lanthanide ions have to emit efficiently, a target which has been better accomplished for DC materials; ii) the absorption in the lanthanide-based UC and DC layers has to be high to ensure a sizeable fraction of photons can be harvested. In this paper, we review such materials and their use as spectral converters for photovoltaics (PV), paying special attention to the UC and DC processes in lanthanide glasses in fluoride matrices. We discuss the challenges that need to be overcome in order to implement these materials in real PV devices. Finally, we will present the synthesis of erbium (Er3+) doped YF3 nano-crystals embedded in transparent glass ceramic (TGC) by melt quenching. This material presents a low phonon energy environment for the Er3+ ions due to the fluoride crystals, while the silica glass provides chemical and mechanical stability to the compound.

  2. Enhanced 2.7 μm emission from Er3+ doped oxyfluoride tellurite glasses for a diode-pump mid-infrared laser

    Directory of Open Access Journals (Sweden)

    F. F. Zhang

    2014-04-01

    Full Text Available The influence of fluoride and shielding gas (O2 or Ar on the physical and spectroscopic properties of Er3+ doped TeO2-ZnO-ZnF2 glass system is investigated. The larger electronegativity of F than O accounts for the gradual decrease of refractive index, density, and J-O parameters with increasing ZnF2. An analysis on Fourier transform infrared transmission spectra reveals that the absorption coefficient of OH− around 3 μm as low as 0.247 cm−1 can be achieved when 30 mol% ZnF2 containing sample is treated with Ar gas during glass melting process. The reduction of OH− groups combined with the low multiphonon relaxation rate (207 s−1 contributes to the enhanced emissions at 1.5 and 2.7 μm, along with prolonged lifetimes of 4I11/2 and 4I13/2 levels. A high branching ratio (17.95% corresponding to the Er3+: 4I11/2 → 4I13/2 transition, the large absorption and emission cross section (0.44 × 10−20 cm2 and 0.45 × 10−20 cm2, and good gain cross section demonstrate that oxyfluoride tellurite glass could be a promising material for a diode-pump 2.7 μm fiber laser.

  3. Thermal analyses, spectral characterization and structural interpretation of Nd3+/Er3+ ions co-doped TeO2-ZnCl2 glasses system

    Science.gov (United States)

    Ahmed, Kasim F.; Ibrahim, Saeed O.; Sahar, Md. R.; Mawlud, Saman Q.; Khizir, Hersh A.

    2017-09-01

    The Nd3+/Er3+ ions co-doped in the system of zinc-tellurite with the composition of (70-2x)TeO2-30ZnCl2-xNd2O3-xEr2O3 concentration from 1.0 to 3.0 mol% (x=1, 2 and 3) glasses were prepared by using conventional melt-quenching technique. The amorphous nature of the glass been confirmed by using X-RAY Diffraction Spectroscopy. Thermal characteristic were determined using a DTA. The obtained results discussed in terms of the glass structure. The glass structure studied by means of FTIR. Seven significant vibrational peaks around 471, 687, 742, 768, 1632, 2833 and 3378 cm-1 which correspond to the structural bonding of the glass are observed in a range of 400-4000cm-1. The peaks observed are consistent with the stretching and bending vibrations of the Te-O, TeO4 trigonal bipyramids, TeO3 trigonal pyramids, Te-O-Te and OH linkages respectively.

  4. Optical characterization, 1.5 μm emission and IR-to-visible energy upconversion in Er3+-doped fluorotellurite glasses

    International Nuclear Information System (INIS)

    Rodriguez-Mendoza, U.R.; Lalla, E.A.; Caceres, J.M.; Rivera-Lopez, F.; Leon-Luis, S.F.; Lavin, V.

    2011-01-01

    The optical properties of Er 3+ ions in a novel glass based on TeO 2 -PbF 2 -AlF 3 oxyfluoride tellurites have been investigated using steady-state and time-resolved spectroscopies as a function of the rare-earth doping concentration. Basic optical characterizations have been performed measuring and calculating the absorption and emission spectra and the cross-sections, the Judd-Ofelt intensity parameters, the radiative probabilities and the fluorescence decays and lifetimes. Special attention has been devoted to the broad 4 I 13/2 → 4 I 15/2 emission transition at around 1.53 μm since, with a wide broadening of around 70 nm and a relative long lifetime of around 3 ms compared to others glass hosts, it shows potential applications in the design of erbium-doped fiber amplifiers. The absorption, the stimulated emission and the gain cross-sections of this transition have been obtained and compared with that obtained in different hosts. Finally, infrared-to-visible upconversion processes exciting at around 800 nm have been analyzed and different mechanisms involved in the energy conversion have been proposed. - Research highlights: → Broadened emission bands and high absorption and emission cross-sections for the transition 4 I 15/2 → 4 I 13/2 suitable for EDFAs. → Efficient green upconverted emission. → High value of C DA (6) energy transfer parameter.

  5. Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

    Science.gov (United States)

    Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

    2015-02-01

    Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

  6. Nonlinear optical properties of TeO2-P2 O5- ZnO-LiNbO3 glass doped with Er3+ ions

    Science.gov (United States)

    Miedzinski, R.; Fuks-Janczarek, I.; El Sayed Said, Y.

    2016-10-01

    A series of lithium niobate LiNbO3 (LN) single crystals doped with Er3+ were grown under the same conditions by melt-quenching method. The distribution coefficients of rare-earth (RE) elements in the "crystal-melt" system of LN were determined at the beginning of the crystal growth. Their dependence on the dopant concentration in melt for 0.4 and 0.8 wt % was investigated. The procedure is applied to RE-doped lithium niobate (LiNbO3), a material of great interest for optoelectronic applications. We have obtained the real χR(3) and imaginary parts χI(3) of the third-order, nonlinear optical susceptibility to the nonlinear refractive index n2 and the nonlinear absorption coefficient β that are valid for absorbing systems. We show that nonlinear refractive or absorptive effects are the consequence of the interplay between the real and imaginary parts of the third-order susceptibilities of the materials. The method for measuring non-linear absorption coefficients and nonlinear refractive index based on well-known Z-scan is presented.

  7. Synthesis of p-type GaN nanowires.

    Science.gov (United States)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  8. Vertical GaN Devices for Power Electronics in Extreme Environments

    Science.gov (United States)

    2016-03-31

    Vertical GaN Devices for Power Electronics in Extreme Environments Isik C. Kizilyalli (1), Robert J. Kaplar (2), O. Aktas (1), A. M. Armstrong (2...electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical

  9. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Spectral and laser properties of Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 crystal at 1.55 µm

    Science.gov (United States)

    Gong, Guoliang; Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2018-04-01

    An Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 (CNGS) crystal was grown by the Czochralski method. Spectral properties of the crystal, including the polarized absorption and fluorescence spectra, the fluorescence decay, as well as the energy transfer efficiency from Yb3+ to Er3+ were investigated in detail. End-pumped by a 976 nm diode laser, a 1556 nm continuous-wave laser with a maximum output power of 202 mW and a slope efficiency of 11.4% was achieved in the Er,Yb,Ce:CNGS crystal. The results indicate the Er,Yb,Ce:CNGS crystal is a promising 1.55 µm laser gain medium.

  11. Magnetic and microwave absorption properties of rare earth ions (Sm{sup 3+}, Er{sup 3+}) doped strontium ferrite and its nanocomposites with polypyrrole

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Juhua, E-mail: luojuhua@163.com [School of Materials Engineering, Yancheng Institute of Technology, Yancheng 224051 (China); Xu, Yang; Mao, Hongkai [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2015-05-01

    M-type strontium ferrite substituted by RE (RE=Sm{sup 3+}, Er{sup 3+}) were prepared via a sol–gel method. Polypyrrole (PPy)/ferrite nanocomposites (with 20 wt% ferrite) were prepared by in situ polymerization method in the presence of ammonium persulfate. Effect of the substituted RE ions on structure, magnetic properties and microwave absorption properties were investigated by X-ray diffraction (XRD), vibrating sample magnetometer (VSM) and vector network analyzer. All XRD patterns show the single phase of strontium hexaferrite without other intermediate phases. The crystallite size of synthesized particle is within the range of 22.2–38.1 nm. The structural in character of the composites were investigated with FT-IR analysis. It shows that the ferrite successfully packed by PPy. TEM photographs show that the particle size had grown up to 50–100 nm after coating with PPy. In the magnetization for the PPy/SrSm{sub 0.3}Fe{sub 11.7}O{sub 19} (SrEr{sub 0.3}Fe{sub 11.7}O{sub 19}) composites, the coercivity (H{sub c}) of the composites both increased compared with the undoped composite while the saturation magnetization (M{sub s}) appeared opposite change with different RE ions. Considering the electromagnetic loss and impedance matching comprehensively, the Er-doped ferrite/PPy composite got the better microwave absorption performance with the maximum RL value of −24.01 dB in 13.8 GHz at 3.0 mm. And its width (<−10 dB) has reached 7.2 GHz which has covered the whole Ku band. - Highlights: • The influence of RE ions on the structure of PPy/SrRE{sub 0.3}Fe{sub 11.7}O{sub 19} is discussed. • The influence of RE ions on the magnetic properties of PPy/SrRE{sub 0.3}Fe{sub 11.7}O{sub 19} is discussed. • The influence of RE ions on electromagnetic losses of PPy/SrRE{sub 0.3}Fe{sub 11.7}O{sub 19} is discussed. • PPy/SrEr{sub 0.3}Fe{sub 11.7}O{sub 19} possessed the excellent absorption property.

  12. An optical and dielectric spectroscopy study of Er.sup.3+./sup.-doped KTaO.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Trepakov, Vladimír; Skvortsov, A.; Poletaev, N.; Potůček, Zdeněk; Nuzhnyy, Dmitry; Jastrabík, Lubomír; Dejneka, Alexandr

    2011-01-01

    Roč. 248, č. 12 (2011), s. 2908-2915 ISSN 0370-1972 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100522 Keywords : Er 3+ centres * IR spectroscopy * optical absorption photoluminescence * potassium tantalate * THz spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.316, year: 2011

  13. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  14. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    International Nuclear Information System (INIS)

    Kashiwagi, Y.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-01-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded

  15. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Science.gov (United States)

    Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  16. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. [Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Koizumi, A.; Fujiwara, Y. [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Takemura, Y.; Murahashi, K.; Ohtsuka, K. [Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan); Furuta, S. [Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  17. Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

    Science.gov (United States)

    Zhong, Hong-Xia; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-He; Huang, Pu; Ding, Yi-Min

    2014-10-01

    Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm-3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

  18. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  19. Stable Single Polarization, Single Frequency, and Linear Cavity Er-Doped Fiber Laser Using a Saturable Absorber

    International Nuclear Information System (INIS)

    Li Qi; Yan Feng-Ping; Peng Wan-Jing; Feng Su-Chun; Feng Ting; Tan Si-Yu; Liu Peng

    2013-01-01

    A simple approach for stable single polarization, single frequency, and linear cavity erbium doped fiber laser is proposed and demonstrated. A Fabry—Pérot filter, polarizer and saturable absorber are used together to ensure stable single frequency, single polarization operation. The optical signal-to-noise ratio of the laser is approximately 57 dB, and the Lorentz linewidth is 13.9 kHz. The polarization state of the laser with good stability is confirmed and the degree of polarization is >99%

  20. Structure guided GANs

    Science.gov (United States)

    Cao, Feidao; Zhao, Huaici; Liu, Pengfei

    2017-11-01

    Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.

  1. Crystal electric field splitting of R{sup 3+}-ions in pure and Co- and Cu-doped RNi{sub 2}B{sub 2}C (R=Ho, Er, Tm)

    Energy Technology Data Exchange (ETDEWEB)

    Gasser, U.; Allenspach, P.; Henggeler, W.; Zolliker, M.; Furrer, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    From the crystal-electric-field (CEF) splitting of the R{sup 3+}-ions, the CEF parameters of RNi{sub 2}B{sub 2}C (R=Ho, Er, Tm) were deduced. In order to get information about the influence of the variation of the density of states (DOS) at the Fermi level (E{sub F}), CEF spectroscopy measurements with Co- and Cu-doped ErNi{sub 2}B{sub 2}C-samples were performed. (author) 1 fig., 1 tab., 1 ref.

  2. Enhanced green upconversion by controlled ceramization of Er3+–Yb3+ co-doped sodium niobium tellurite glass–ceramics for low temperature sensors

    International Nuclear Information System (INIS)

    Suresh Kumar, J.; Pavani, K.; Graça, M.P.F.; Soares, M.J.

    2014-01-01

    Highlights: • Upconversion luminescence improved in glass–ceramics compared to host glass. • Judd–Ofelt and radiative parameters calculated. • NIR decay curve results concur the results of improved luminescence. • Temperature dependent upconversion support the use of materials for sensors. - Abstract: Tellurite based glasses are well-known for their upconversion properties besides having a disadvantage of low mechanical strength dragging them away from practical applications. The present work deals with preparation of sodium niobium tellurite (SNT) glasses using melt quenching method, in which small quantities of boron and silicon in the form of oxides are added to improve their mechanical properties. Controlled heat treatment is performed to ceramize the prepared glasses based on the thermal data given by DTA. XRD and SEM profiles of the glass–ceramics which confirmed the formation of crystalline monoclinic Sodium Tellurium Niobium Oxide (Na 1.4 Nb 3 Te 4.9 O 18 ) phase (JCPDS card No. 04–011-7556). Upconversion measurements in the visible region were made for the prepared Er 3+ –Yb 3+ co-doped glasses and glass–ceramics with 980 nm laser excitation varying the laser power and concentration of Er 3+ ions. Results showed that the upconversion luminescence intensity was enhanced by ten times in SNT glass–ceramics compared to that in the SNT glasses. Decay curves give evidence of high performance of glass–ceramics compared to glasses due to ceramization and structural changes. Temperature dependent visible upconversion was performed to test the ability of efficient SNT glass–ceramic at low temperatures and variation of upconversion intensities was studied

  3. Utilization of visible to NIR light energy by Yb"+"3, Er"+"3 and Tm"+"3 doped BiVO_4 for the photocatalytic degradation of methylene blue

    International Nuclear Information System (INIS)

    Regmi, Chhabilal; Kshetri, Yuwaraj K.; Ray, Schindra Kumar; Pandey, Ramesh Prasad; Lee, Soo Wohn

    2017-01-01

    Highlights: • Lanthanide doped BiVO_4 as highly efficient upconversion and photocatalytic material. • Well defined beads like morphology for better photocatalytic activity. • Effective utilization of NIR and visible light for efficient photocatalytic degradation of methylene blue. • Nontoxic to human cells, potential for application in biological fields. - Abstract: Lanthanide-doped BiVO_4 semiconductors with efficient photocatalytic activities over a broad range of the solar light spectrum have been synthesized by the microwave hydrothermal method using ethylenediaminetetraacetic acid (EDTA). The structural, morphological, and optical properties of the as-synthesized samples were evaluated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray powder diffraction (XRD), Raman spectroscopy, FT-IR spectroscopy, UV–vis diffuse reflectance spectroscopy (DRS), and photoluminescence spectroscopy (PL). The chemical compositions were analyzed by X-ray photoelectron spectroscopy (XPS). The toxicity of the samples was measured using Mus musculus skin melanoma cells (B16-F10 (ATCC"® CRL-6475™)) and were found to be nontoxic for human cells. The photocatalytic efficiency of the prepared samples was evaluated by methylene blue (MB) degradation. The best photocatalytic activity was shown by BiVO_4 with 6:3:3 mol percentage of Yb"+"3:Er"+"3:Tm"+"3 in all solar light spectrum. The synthesized samples possess low band gap energy and a hollow structure suitable for the better photocatalytic activity. The observed NIR photoactivity supports that the upconversion mechanism is involved in the overall photocatalytic process. Therefore, this approach provides a better alternative upconversion material for integral solar light absorption.

  4. Zn-dopant dependent defect evolution in GaN nanowires

    Science.gov (United States)

    Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

    2015-10-01

    Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta

  5. Thermal characterization, crystal field analysis and in-band pumped laser performance of Er doped NaY(WO(4(2 disordered laser crystals.

    Directory of Open Access Journals (Sweden)

    María Dolores Serrano

    Full Text Available Undoped and Er-doped NaY(WO42 disordered single crystals have been grown by the Czochralski technique. The specific heat and thermal conductivity (κ of these crystals have been characterized from T = 4 K to 700 K and 360 K, respectively. It is shown that κ exhibits anisotropy characteristic of single crystals as well as a κ(T behavior observed in glasses, with a saturation mean free phonon path of 3.6 Å and 4.5 Å for propagation along a and c crystal axes, respectively. The relative energy positions and irreducible representations of Stark Er(3+ levels up to (4G(7/2 multiplet have been determined by the combination of experimental low (<10 K temperature optical absorption and photoluminescence measurements and simulations with a single-electron Hamiltonian including both free-ion and crystal field interactions. Absorption, emission and gain cross sections of the (4I(13/2↔(4I(15/2 laser related transition have been determined at 77 K. The (4I(13/2 Er(3+ lifetime (τ was measured in the temperature range of 77-300 K, and was found to change from τ (77K ≈ 4.5 ms to τ (300K ≈ 3.5 ms. Laser operation is demonstrated at 77 K and 300 K by resonantly pumping the (4I(13/2 multiplet at λ≈1500 nm with a broadband (FWHM≈20 nm diode laser source perfectly matching the 77 K crystal (4I(15/2 → (4I(13/2 absorption profile. At 77 K as much as 5.5 W of output power were obtained in π-polarized configuration with a slope efficiency versus absorbed pump power of 57%, the free running laser wavelength in air was λ≈1611 nm with the laser output bandwidth of 3.5 nm. The laser emission was tunable over 30.7 nm, from 1590.7 nm to 1621.4 nm, for the same π-polarized configuration.

  6. Z L GAN

    Indian Academy of Sciences (India)

    Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.

  7. Infrared emissions in MgSrAl{sub 10}O{sub 17}:Er{sup 3+} phosphor co-doped with Yb{sup 3+}/Ba{sup 2+}/Ca{sup 2+} obtained by solution combustion route

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Vijay, E-mail: vijayjiin2006@yahoo.com [Physical Chemistry, Institute for Pure and Applied Chemistry and Center of Interface Science, University of Oldenburg, 26129 Oldenburg (Germany); Kumar Rai, Vineet [Department of Applied Physics, Indian School of Mines, Dhanbad 826 004 (India); Venkatramu, V. [Department of Physics, Yogi Vemana University, Kadapa 516 003 (India); Chakradhar, R.P.S. [CSIR-National Aerospace, Bangalore 560 017 (India); Hwan Kim, Sang [Department of Chemical Engineering, Konkuk University, Seoul 143-701 (Korea, Republic of)

    2013-02-15

    An intense infrared emitting MgSrAl{sub 10}O{sub 17}:Er{sup 3+} phosphor co-doped with Yb{sup 3+}, Ba{sup 2+} and Ca{sup 2+} ions have been prepared by a solution combustion method. Phase purity of the derived compounds was confirmed by X-ray diffraction technique. The vibrational properties of MgSrAl{sub 10}O{sub 17} phosphor was studied by Fourier transform infrared spectroscopy. The broad and strong infrared emission of Er{sup 3+} ions at around 1.53 {mu}m was observed upon excitation at 980 nm. Effect of co-doping with the Yb{sup 3+}{sub ,} Ba{sup 2+} and Ca{sup 2+} ions on the infrared luminescence intensity of Er{sup 3+} ions and the mechanism responsible for the variation in the infrared intensity have been discussed. The results indicate that these materials may be suitable for the optical telecommunication window and wavelength division multiplexing applications. - Highlights: Black-Right-Pointing-Pointer The hexagonal phase of MgSrAl{sub 10}O{sub 17} could be obtained by the low temperature combustion method. Black-Right-Pointing-Pointer The broad and strong infrared emission of Er{sup 3+} ions at around 1.53 {mu}m was observed. Black-Right-Pointing-Pointer Effect of co-doping with the Yb{sup 3+}{sub ,} Ba{sup 2+} and Ca{sup 2+} ions on the infrared luminescence intensity of Er{sup 3+} were reported.

  8. Dependence of upconversion emission intensity on Yb3+ concentration in Er3+/Yb3+ co-doped flake shaped Y2(MoO4)3 phosphors

    International Nuclear Information System (INIS)

    Lu Weili; Cheng Lihong; Zhong Haiyang; Sun Jiashi; Wan Jing; Tian Yue; Chen Baojiu

    2010-01-01

    Yttrium molybdate phosphors with fixed Er 3+ and various Yb 3+ concentrations were synthesized via a co-precipitation method. The crystal structure and the morphology of the phosphor were characterized by means of x-ray diffraction and field-emission scanning electron microscopy. Under 980 nm excitation, red and green upconversion emissions centred at 660, 553 and 530 nm were observed. Quantitative analyses on the dependence of upconversion emission intensity on the working current of a laser diode (LD) indicated that two-photon processes are responsible for both red and green upconversion emissions in both cases of low and high Yb 3+ concentrations. The relationship between the emission intensity ratio of 2 H 11/2 → 4 I 15/2 to 4 S 3/2 → 4 I 15/2 and the working current of the LD was studied for the samples doped with low and high Yb 3+ concentrations. Finally, a set of rate equations was established based on the possible upconversion mechanism, and an empirical formula was proposed to describe the Yb 3+ concentration dependence of upconversion emission intensity; the empirical formula fits well with the experimental data.

  9. The influence of TeO2 on thermal stability and 1.53 μm spectroscopic properties in Er(3+) doped oxyfluorite glasses.

    Science.gov (United States)

    Wang, Fengchao; Cai, Muzhi; Chen, Rong; Jing, Xufeng; Li, Bingpeng; Tian, Ying; Zhang, Junjie; Xu, Shiqing

    2015-11-05

    In this work, the thermal and spectroscopic properties of Er(3+)-doped oxyfluorite glass based on AMCSBYT (AlF3-MgF2-CaF2-SrF2-BaF2-YF3-TeO2) system for different TeO2 concentrations from 6 to 21 mol% is reported. After adding a suitable content of TeO2, the thermal ability of glass improves significantly whose ΔT and S can reach to 118 °C and 4.47, respectively. The stimulated emission cross-section reaches to 7.80×10(-21) cm(2) and the fluorescence lifetime is 12.18 ms. At the same time, the bandwidth characteristics reach to 46.41×10(-21) cm(2) nm and the gain performance is 63.73×10(-21) cm(2) ms. These results show that the optical performances of this oxyfluorite glass are very well. Hence, AMCSBYT glass with superior performances might be a useful material for applications in optical amplifier around 1.53 μm. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Crystallization and spectroscopic properties investigations of Er3+ doped transparent glass ceramics containing CaF2

    International Nuclear Information System (INIS)

    Hu Zhongjian; Wang Yuansheng; Ma En; Bao Feng; Yu Yunlong; Chen Daqin

    2006-01-01

    Transparent oxyfluoride glass ceramics with composition of 45SiO 2 -25Al 2 O 3 -5CaCO 3 -10NaF-15CaF 2 -0.5ErF 3 (in mol%) were developed through controlled crystallization of melt-quenched glass. Non-isothermal crystallization kinetics investigation showed that the average apparent activation energy E a and Avrami exponent n are about 283 kJ/mol and 2.22, respectively, indicating the crystallization a three dimensional crystal growth process controlled by the diffusion with a decreasing nucleation rate. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) observation revealed the precipitation of CaF 2 crystallites sized about 15 nm among the glass matrix after heat-treatment at 650 deg. C for 2 h. For as-made glass, no upconversion signals were detected when excited with a 30 mW diode laser at 980 nm, while strong upconversion emissions at 545, 660 and 800 nm were obtained for transparent glass ceramic under similar excitation condition

  11. Enhancement of Cerenkov luminescence imaging by dual excitation of Er(3+,Yb(3+-doped rare-earth microparticles.

    Directory of Open Access Journals (Sweden)

    Xiaowei Ma

    Full Text Available Cerenkov luminescence imaging (CLI has been successfully utilized in various fields of preclinical studies; however, CLI is challenging due to its weak luminescent intensity and insufficient penetration capability. Here, we report the design and synthesis of a type of rare-earth microparticles (REMPs, which can be dually excited by Cerenkov luminescence (CL resulting from the decay of radionuclides to enhance CLI in terms of intensity and penetration.Yb(3+- and Er(3+- codoped hexagonal NaYF4 hollow microtubes were synthesized via a hydrothermal route. The phase, morphology, and emission spectrum were confirmed for these REMPs by power X-ray diffraction (XRD, scanning electron microscopy (SEM, and spectrophotometry, respectively. A commercial CCD camera equipped with a series of optical filters was employed to quantify the intensity and spectrum of CLI from radionuclides. The enhancement of penetration was investigated by imaging studies of nylon phantoms and nude mouse pseudotumor models.the REMPs could be dually excited by CL at the wavelengths of 520 and 980 nm, and the emission peaks overlaid at 660 nm. This strategy approximately doubled the overall detectable intensity of CLI and extended its maximum penetration in nylon phantoms from 5 to 15 mm. The penetration study in living animals yielded similar results.this study demonstrated that CL can dually excite REMPs and that the overlaid emissions in the range of 660 nm could significantly enhance the penetration and intensity of CL. The proposed enhanced CLI strategy may have promising applications in the future.

  12. Synthesis and Characterization of Upconversion Fluorescent Yb3+, Er3+ Doped CsY2F7 Nano- and Microcrystals

    Directory of Open Access Journals (Sweden)

    Helmut Schäfer

    2009-01-01

    Full Text Available Cs Y2F7: 78%   Y3+, 20%   Yb3+, 2%   Er3+ nanocrystals with a mean diameter of approximately 8 nm were synthesized at   185°C in the high boiling organic solvent N-(2-hydroxyethyl-ethylenediamine (HEEDA using ammonium fluoride, the rare earth chlorides and a solution of caesium alkoxide of N-(2-hydroxyethyl-ethylenediamine in HEEDA. In parallel with this approach, a microwave assisted synthesis was carried out which forms nanocrystals of the same material, about 50 nm in size, in aqueous solution at 200∘C/8 bar starting from ammonium fluoride, the rare earth chlorides, and caesium fluoride. In case of the nanocrystals, derived from the HEEDA synthesis, TEM images reveal that the particles are separated but have a broad size distribution. Also an occurred heat-treatment of these nanocrystals (600∘C for 45 minutes led to bulk material which shows highly efficient light emission upon continuous wave (CW excitation at 978 nm. Besides the optical properties, the structure and the morphology of the three products were investigated by means of powder XRD and Rietveld method.

  13. Electron holography studies of the charge on dislocations in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Cherns, D.; Jiao, C.G.; Mokhtari, H. [H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Cai, J.; Ponce, F.A. [Department of Physics and Astronomy, Arizona State University, Tempe, AZ85287 (United States)

    2002-12-01

    The measurement of charge on dislocations in GaN by electron holography is described. Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged. It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  14. Rare-earth Doped GaN - An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion (2nd year)

    Science.gov (United States)

    2010-06-01

    temperature for two Ga fluxes: Ga = 1.5×10–7 torr BEP (blue) and Ga= 3.5×10–7 torr BEP (red). ...........................................4  Figure 4...850–1025 °C, and the Ga flux, measured as beam equivalent pressure ( BEP ), was varied from 9.8×10–6 to 5.6×10–7 torr. The secondary ion mass...temperature for two Ga fluxes: Ga = 1.5×10–7 torr beam equivalent pressure (blue) and Ga= 3.5×10–7 torr BEP (red). 3.2 Optical Studies of Nd Doped

  15. Structure-property relations in new fluorophosphate glasses singly- and co-doped with Er{sup 3+} and Yb{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Gonçalves, Tássia S.; Moreira Silva, Raphaell J.; Oliveira Junior, Marcos de; Ferrari, Cynthia R. [Physics Institute of São Carlos, University of São Paulo, São Carlos, SP 13566-590 (Brazil); Poirier, Gäel Y. [Science and Technology Institute, Federal University of Alfenas, Poços de Caldas, MG 37715-400 (Brazil); Eckert, Hellmut, E-mail: eckert@ifsc.usp.br [Physics Institute of São Carlos, University of São Paulo, São Carlos, SP 13566-590 (Brazil); Physical Chemistry Institute, Westfälische Wilhelms Universität Münster, Münster D-48149 (Germany); Camargo, Andrea S.S. de, E-mail: andreasc@ifsc.usp.br [Physics Institute of São Carlos, University of São Paulo, São Carlos, SP 13566-590 (Brazil)

    2015-05-01

    Rare earth (RE{sup 3+})-doped fluorophosphate glasses are among the most promising candidates for high-efficiency laser generation in the near-infrared spectral region. By proper choice of composition, these materials can combine the advantages of fluorides (low phonon energies, low refractive indices, extensive optical window, low hygroscopicity) and of oxides (high chemical and mechanical stability and high dopant solubility), resulting in enhancement of the RE{sup 3+} emissive properties. In this work, we present the synthesis and structural/spectroscopic investigation of new glasses with composition 25BaF{sub 2}25SrF{sub 2}(30-x)Al(PO{sub 3}){sub 3}xAlF{sub 3}(20-z)YF{sub 3}:zREF{sub 3}, where x = 20 or 15, RE = Er{sup 3+} and/or Yb{sup 3+}, z = 0.25–5.0 mol%. Results indicate considerable improvement of the emissive properties of both ions when compared to phosphate or even other fluorophosphate host compositions. Long excited state lifetimes (τ = 10 ms for the Er{sup 3+} level {sup 4}I{sub 13/2}, and τ = 1.3 ms for the Yb{sup 3+} level {sup 2}F{sub 5/2}) imply high fluorescence quantum efficiencies η (up to 85% for both ions). Structural characterization by Raman and multinuclear solid state NMR spectroscopies indicate that the metaphosphate-type chain structure of the Al(PO{sub 3}){sub 3} vitreous framework is partially depolymerized and dominated by Q{sup (0)} and Q{sup (1)} units crosslinked by six-coordinate Al species. As revealed by {sup 27}Al{"3"1P} rotational echo double resonance (REDOR) NMR results the average local aluminum environment of the x = 20 sample comprises 1.6 phosphate and 4.4 fluoride species. These results indicate a clear bonding preference between aluminum and phosphorus, which is consistent with the desired dominance of fluoride species in the local environment of the rare earth and alkaline earth atoms in these glasses. - Highlights: • New fluorophosphate glass composition with excellent photophysical properties.

  16. Enhancement of luminescence properties in Er3+ doped TeO2-Na2O-PbX (X=O and F) ternary glasses.

    Science.gov (United States)

    Kumar, Kaushal; Rai, S B; Rai, D K

    2007-04-01

    An enhancement of luminescence properties in Er3+ doped ternary glasses is observed on the addition of PbO/PbF2. The infrared to visible upconversion emission bands are observed at 410, 525, 550 and 658 nm, due to the 2H9/2-->4I15/2, 2H11/2-->4I15/2, 4S3/2-->4I15/2, 4F9/2-->4I15/2 transitions respectively, on excitation with 797 nm laser line. A detailed study reveals that the 2H9/2-->4I15/2 transition arises due to three step upconversion process while other transitions arise due to two step absorption. On excitation with 532 nm radiation, ultraviolet and violet upconversion bands centered at 380, 404, 410 and 475 nm wavelengths are observed along with one photon luminescence bands at 525, 550, 658 and 843 nm wavelengths. These bands are found due to the 4G11/2-->4I15/2, 2P3/2-->4I13/2, 2H9/2-->4I15/2, 2P3/2-->4I11/2, 2H11/2-->4I15/2, 4S3/2-->4I15/2, 4F9/2-->4I15/2 and 4S3/2-->4I13/2 transitions, respectively. Though incorporation of PbO and PbF2 both enhances fluorescence intensities however, PbF2 content has an important influence on upconversion luminescence emission. The incorporation of PbF2 enhances the red emission (658 nm) intensity by 1.5 times and the violet emission (410 nm) intensity by 2.0 times. A concentration dependence study of fluorescence reveals the rapid increase in the red (4F9/2-->4I15/2) emission intensity relative to the green (4S3/2-->4I15/2) emission with increase in the Er3+ ion concentration. This behaviour has been explained in terms of an energy transfer by relaxation between excited ions.

  17. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-12-01

    We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  18. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-12-01

    Full Text Available We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  19. New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

    Science.gov (United States)

    Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

    2018-06-01

    New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

  20. NIR luminescent Er{sup 3+}/Yb{sup 3+} co-doped SiO{sub 2}-ZrO{sub 2} nanostructured planar and channel waveguides: Optical and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Cunha, Cesar dos Santos [Departamento de Quimica, Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901, Ribeirao Preto/SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Quimica de Materiais - (GPQM), Departamento de Ciencias Naturais, Universidade Federal de Sao Joao Del Rei, Campus Dom Bosco, Praca Dom Helvecio, 74, 36301-160, Sao Joao Del Rei, MG (Brazil); Oliveira, Drielly Cristina de [Departamento de Quimica, Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901, Ribeirao Preto/SP (Brazil); Maia, Lauro June Queiroz [Grupo Fisica de Materiais, Instituto de Fisica, UFG, Campus Samambaia, Caixa Postal 131, 74001-970, Goiania/GO (Brazil); Gomes, Anderson Stevens Leonidas [Departamento de Fisica, Universidade Federal de Pernambuco, Cidade Universitaria, Recife/PE, 50670-901 (Brazil); Ribeiro, Sidney Jose Lima [Laboratorio de Materiais Fotonicos, Instituto de Quimica, UNESP, Caixa Postal 355, 14801-970, Araraquara/SP (Brazil); and others

    2012-09-14

    Optical and structural properties of planar and channel waveguides based on sol-gel Er{sup 3+} and Yb{sup 3+} co-doped SiO{sub 2}-ZrO{sub 2} are reported. Microstructured channels with high homogeneous surface profile were written onto the surface of multilayered densified films deposited on SiO{sub 2}/Si substrates by a femtosecond laser etching technique. The densification of the planar waveguides was evaluated from changes in the refractive index and thickness, with full densification being achieved at 900 Degree-Sign C after annealing from 23 up to 500 min, depending on the ZrO{sub 2} content. Crystal nucleation and growth took place together with densification, thereby producing transparent glass ceramic planar waveguides containing rare earth-doped ZrO{sub 2} nanocrystals dispersed in a silica-based glassy host. Low roughness and crack-free surface as well as high confinement coefficient were achieved for all the compositions. Enhanced NIR luminescence of the Er{sup 3+} ions was observed for the Yb{sup 3+}-codoped planar waveguides, denoting an efficient energy transfer from the Yb{sup 3+} to the Er{sup 3+} ion. Highlights: Black-Right-Pointing-Pointer Sol-gel high NIR luminescent nanostructured planar and channel waveguides. Black-Right-Pointing-Pointer Microstructured channels written by a femtosecond laser etching technique. Black-Right-Pointing-Pointer Transparent glass ceramic with rare earth-doped ZrO{sub 2} nanocrystals in a silica host. Black-Right-Pointing-Pointer Enhanced NIR luminescence, efficient energy transfer from the Yb{sup 3+} to the Er{sup 3+} ion. Black-Right-Pointing-Pointer New planar channel waveguides to be applied as EDWA in the C telecommunication band.

  1. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  2. Theoretical investigation of the more suitable rare earth to achieve high gain in waveguide based on silica containing silicon nanograins doped with either Nd³+ or Er³+ ions.

    Science.gov (United States)

    Fafin, Alexandre; Cardin, Julien; Dufour, Christian; Gourbilleau, Fabrice

    2014-05-19

    We present a comparative study of the gain achievement in a waveguide whose active layer is constituted by a silica matrix containing silicon nanograins acting as sensitizer of either neodymium ions (Nd3+) or erbium ions (Er3+). By means of an auxiliary differential equation and finite difference time domain (ADE-FDTD) approach that we developed, we investigate the steady states regime of both rare earths ions and silicon nanograins levels populations as well as the electromagnetic field for different pumping powers ranging from 1 to 104 mW/mm2. Moreover, the achievable gain has been estimated in this pumping range. The Nd3+ doped waveguide shows a higher gross gain per unit length at 1064 nm (up to 30 dB/cm) than the one with Er3+ doped active layer at 1532 nm (up to 2 dB/cm). Taking into account the experimental background losses we demonstrate that a significant positive net gain can only be achieved with the Nd3+ doped waveguide.

  3. Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

    International Nuclear Information System (INIS)

    Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

    2000-01-01

    Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

  4. Dislocation-induced nanoparticle decoration on a GaN nanowire.

    Science.gov (United States)

    Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

    2015-02-04

    GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

  5. Judd–Ofelt analysis and transition probabilities of Er{sup 3+} doped KY{sub 1−x−y}Gd{sub x}Lu{sub y}(WO{sub 4}){sub 2} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Martínez de Mendívil, Jon, E-mail: jon.martinez@uam.es [Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Lifante, Ginés [Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Pujol, Maria Cinta; Aguiló, Magdalena; Díaz, Francesc [Física i Cristalografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili, Tarragona (Spain); Cantelar, Eugenio [Departamento de Física de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain)

    2015-09-15

    In this work the transition probabilities, radiative lifetimes and branching ratios of Er{sup 3+} ions in KY{sub 1−x−y}Gd{sub x}Lu{sub y}(WO{sub 4}){sub 2} crystals have been determined. With this aim, Er{sup 3+} doped KY{sub 1−x−y}Gd{sub x}Lu{sub y}(WO{sub 4}){sub 2} crystals have been grown by means of the high temperature Top-Seeded Solution Growth. A spectroscopic analysis of Er{sup 3+} ions in this crystal has been performed following anisotropic Judd–Ofelt analysis to obtain basic spectroscopic properties. A quantum efficiency over 97% has been determined for the {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} transition, indicating that this material is adequate for the development of lasers and amplifiers working in the third telecommunication window. - Highlights: • Er{sub 0.01}:KY{sub 1−x−y}Gd{sub x}Lu{sub y}(WO{sub 4}){sub 2} crystals have been grown. • Anisotropic Judd Ofelt analysis has been carried out. • Optical transition probabilities and branching ratios have been calculated. • Radiative and non-radiative lifetimes have been obtained.

  6. Scintillation properties of Nd{sup 3+}, Tm{sup 3+}, and Er{sup 3+} doped LuF{sub 3} scintillators in the vacuum ultra violet region

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki, E-mail: yanagida@imr.tohoku.ac.jp [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Kawaguchi, Noriaki [Tokuyama Corporation Ltd., Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 Japan (Japan); Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 (Japan); Fukuda, Kentaro [Tokuyama Corporation Ltd., Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 Japan (Japan); Kurosawa, Shunsuke; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 (Japan); Taniue, Kojiro [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa-oiwakecho, Sakyo, Kyoto, 606-8502 (Japan); Sekiya, Hiroyuki [Kamioka Observatory, Institute for Cosmic Ray Research, University of Tokyo, Hida, 506-1205 (Japan); Kubo, Hidetoshi [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa-oiwakecho, Sakyo, Kyoto, 606-8502 (Japan); Yoshikawa, Akira [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 (Japan); Tanimori, Toru [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa-oiwakecho, Sakyo, Kyoto, 606-8502 (Japan)

    2011-12-11

    In order to develop novel vacuum ultra violet (VUV) emitting scintillators, we grew Nd 0.5%, Tm 0.5%, and Er 0.5% doped LuF{sub 3} scintillators by the {mu}-pulling down method, because LuF{sub 3} has a very wide band gap and Nd{sup 3+}, Tm{sup 3+}, and Er{sup 3+} luminescence centers show fast and intense 5d-4f emission in VUV region. Transmittance and X-ray induced radioluminescence were studied in these three samples using our original spectrometer made by Bunkou-Keiki company. In the VUV region, transmittance of 20-60% was achieved for all the samples. The emission peaks appeared at approximately 180, 165, and 164 nm for Nd{sup 3+}, Tm{sup 3+}, and Er{sup 3+} doped LuF{sub 3}, respectively. Using PMT R8778 (Hamamatsu), we measured their light yields under {sup 241}Am {alpha}-ray excitation. Compared with Nd:LaF{sub 3} scintillator, which has 33 photoelectrons/5.5 MeV {alpha}, Nd:LuF{sub 3} and Tm:LuF{sub 3} showed 900{+-}90 and 170{+-}20 ph/5.5 MeV-{alpha}, respectively. Only for the Nd doped one, we can detect {sup 137}Cs 662 keV {gamma}-ray photoabsorption peak and the light yield of 1200{+-}120 ph/MeV was measured. We also investigated their decay time profiles by picosecond pulse X-ray equipped streak camera, and the main decay component of Nd:LuF{sub 3} turned out to be 7.63 ns.

  7. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  8. Photoluminescence optimization of Er-doped SiO{sub 2} films synthesized by radiofrequency magnetron sputtering with energetic treatments during and after deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cattaruzza, E., E-mail: cattaruz@unive.it; Battaglin, G.; Trave, E.; Visentin, F.

    2011-06-01

    By radiofrequency magnetron sputtering co-deposition we synthesized Er:SiO{sub 2} film 0.5 {mu}m thick on silica substrates, with Er content < 0.3 atomic %. By changing the preparation condition (during deposition we have used an additional negative bias voltage applied to the substrates for inducing a low-energy ion bombardment, with or without a contemporary heating) and by varying the thermal treatment after the synthesis (the best conditions were 1 h in the range 700-800 deg. C, in air) we have obtained an Er:SiO{sub 2} system with an intense photoluminescence emission at {lambda} = 1.54 {mu}m. The best-performing Er:SiO{sub 2} samples obtained by sputtering have shown a photoluminescence response comparable to that of the typical Er:SiO{sub 2} thin film systems obtained by conventional techniques used in applicative framework.

  9. Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes

    International Nuclear Information System (INIS)

    Zhang Min; Shi Jun-Jie

    2014-01-01

    The electronic structure and magnetic properties of the transition-metal (TM) atoms (Sc—Zn, Pt and Au) doped zigzag GaN single-walled nanotubes (NTs) are investigated using first-principles spin-polarized density functional calculations. Our results show that the bindings of all TM atoms are stable with the binding energy in the range of 6–16 eV. The Sc- and V-doped GaN NTs exhibit a nonmagnetic behavior. The GaN NTs doped with Ti, Mn, Ni, Cu and Pt are antiferromagnetic. On the contrary, the Cr-, Fe-, Co-, Zn- and Au-doped GaN NTs show the ferromagnetic characteristics. The Mn- and Co-doped GaN NTs induce the largest local moment of 4μ B among these TM atoms. The local magnetic moment is dominated by the contribution from the substitutional TM atom and the N atoms bonded with it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Tung-Hsien; Hong, Franklin Chau-Nan

    2013-01-01

    Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes

  11. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  12. Spectral properties of Er{sup 3+}-doped CaGdAlO{sub 4} crystal for laser application around 1.55 μm

    Energy Technology Data Exchange (ETDEWEB)

    Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F; Luo, Z.D.; Huang, Y.D., E-mail: huyd@fjirsm.ac.cn

    2014-02-05

    Highlights: • Detailed spectral properties of the Er:CaGdAlO{sub 4} crystal have been investigated. • Multi-phonon relaxation rate of Er{sup 3+} ions in the Er:CaGdAlO{sub 4} crystal is estimated. • The quantum efficiency of the {sup 4}I{sub 13/2} level in the Er:CaGdAlO{sub 4} crystal is near 100%. -- Abstract: Room-temperature polarized spectral properties of the Er:CaGdAlO{sub 4} crystal are reported. The Judd–Ofelt theory was applied to analyze the polarized absorption spectra and then calculate the spontaneous emission probabilities, radiative lifetimes, and branch ratios. Room-temperature fluorescence lifetimes of the {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}F{sub 9/2}, and {sup 4}S{sub 3/2} multiplets for Er{sup 3+} ions were measured. Stimulated emission cross-sections of the {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} transition obtained by the Fuchtbauer–Ladenberg formula and the reciprocity method were compared. The results show that the Er:CaGdAlO{sub 4} crystal may be a potential gain medium for a low-threshold 1.55 μm laser.

  13. Determination of carrier diffusion length in p- and n-type GaN

    Science.gov (United States)

    Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

    2014-03-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

  14. Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

    International Nuclear Information System (INIS)

    San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

    2013-01-01

    The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

  15. Enhanced electrical properties, color-tunable up-conversion luminescence, and temperature sensing behaviour in Er-doped Bi3Ti1.5W0.5O9 multifunctional ferroelectric ceramics

    Science.gov (United States)

    Zhang, Ying; Li, Jun; Chai, Xiaona; Wang, Xusheng; Li, Yongxiang; Yao, Xi

    2017-03-01

    Er-doped Bi3Ti1.5W0.5O9 (BTW-x) ferroelectric ceramics were prepared by a conventional solid-state reaction synthesis method, and their structure, electrical properties, up-conversion (UC) luminescence, and temperature sensing behaviour were investigated. A high piezoelectric coefficient d33 (9.6 pC/N), a large remnant polarization Pr (12.75 μC/cm2), a high Curie temperature Tc (730.2 °C), and the optimal luminescent intensity are obtained for the samples at x = 0.05. By changing the Er doped concentration, the BTW-x ceramics are capable of generating various UC spectra and the color could be tunable from green to yellow. According to the fluorescence intensity ratio of green emissions at 532.6 nm and 549.2 nm in the temperature range from 83 K to 423 K, optical temperature sensing properties are investigated and the maximum sensing sensitivity is found to be 0.00314 K-1 at 423 K. The results conclude that BTW-x would be a candidate in high temperature sensor, fluorescence thermometry, and opto-electronic integration applications.

  16. Synthesis and optical characterization of ZrO{sub 2} pure and doped with Er{sup 3+} ions for use as thermoluminescent dosimeter; Sintesis y caracterizacion optica de ZrO{sub 2} puro y dopado con iones Er{sup 3+} para su aplicacion como dosimetro termoluminiscente

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez E, R.; Sosa F, R.; Arrieta C, A. M., E-mail: ralf_gutierrez@yahoo.com [Universidad Autonoma Metropolitana, Unidad Iztapalapa, Departamento de Fisica, Av. San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico)

    2015-10-15

    Full text: There are different natural minerals and synthetic inorganic compounds exhibiting the phenomenon of thermoluminescence (Tl); however only part of them meet the requirements for use as Tl dosimeters. In this research the synthesis and characterization of ZrO{sub 2} pure and doped with Er{sup 3+} ions are presented, at a concentration of 0.5 % mol prepared by the sol-gel method in monolithic way and transparent for its possible application as thermoluminescent dosimeter. The materials are characterized by absorption spectroscopy, emission and excitation in the region of UV-Vis-Nir, in which spectra corresponding to ZrO{sub 2} and characteristic bands of Er{sup 3+} doped are observed, identifying the mechanisms of energy transfer for the emitted radiation as one of the most important points in the Tl materials design. It was observed that the threshold dose detection and accuracy of measurements depend on the efficiency of energy conversion. In addition an analysis by scanning electron microscopy, EDS and X-ray diffraction on the morphologic and spectroscopic changes caused by the reduction of organic material is presented. These were carried out in two different drying processes: at room temperature and annealing at 500 degrees C. All these physical and chemical properties are crucial in deciding its application in dosimetry of ionizing radiation. (Author)

  17. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO{sub 2} thin films obtained by evaporation induced self-assembly method

    Energy Technology Data Exchange (ETDEWEB)

    Borlaf, Mario, E-mail: mborlaf@icv.csic.es [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Caes, Sebastien; Dewalque, Jennifer [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); Colomer, María Teresa; Moreno, Rodrigo [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Cloots, Rudi; Boschini, Frederic [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); APTIS, Institute of Physics, University of Liege, B5 Sart Tilman, 4000 Liege (Belgium)

    2014-05-02

    Polymeric sol–gel route has been used for the preparation of TiO{sub 2} and RE{sub 2}O{sub 3–}TiO{sub 2} (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er{sup 3+} and Eu{sup 3+} was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu{sup 3+} and Er{sup 3+} f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO{sub 2} mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials.

  18. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO2 thin films obtained by evaporation induced self-assembly method

    International Nuclear Information System (INIS)

    Borlaf, Mario; Caes, Sebastien; Dewalque, Jennifer; Colomer, María Teresa; Moreno, Rodrigo; Cloots, Rudi; Boschini, Frederic

    2014-01-01

    Polymeric sol–gel route has been used for the preparation of TiO 2 and RE 2 O 3– TiO 2 (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er 3+ and Eu 3+ was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu 3+ and Er 3+ f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO 2 mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials

  19. Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility; Estudo de semicondutores amorfos dopados com terras raras (Gd e Er) e de polimeros condutores atraves das tecnicas de RPE e susceptibilidade magnetica

    Energy Technology Data Exchange (ETDEWEB)

    Sercheli, Mauricio da Silva

    1999-07-01

    This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er{sup 3+} ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO{sub 4}{sup -}, which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

  20. Broadened band C-telecom and intense upconversion emission of Er{sup 3+}/Yb{sup 3+} co-doped CaYAlO{sub 4} luminescent material obtained by an easy route

    Energy Technology Data Exchange (ETDEWEB)

    Perrella, R.V.; Schiavon, M.A. [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del Rei (UFSJ), Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João del Rei, MG (Brazil); Pecoraro, E.; Ribeiro, S.J.L. [UNESP, Institute of Chemistry, P.O. Box 355, 14800-970 Araraquara, SP (Brazil); Ferrari, J.L., E-mail: ferrari@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del Rei (UFSJ), Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João del Rei, MG (Brazil)

    2016-10-15

    This work reports on photoluminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped CaYAlO{sub 4} in powder form, synthesized by an easy route using citric acid as ligand to form complex precursor. The 1.2 mol% of Yb{sup 3+} was fixed, while the amount of Er{sup 3+} changed in 0.5, 1.5 and 3 mol% in order to evaluate the photoluminescence properties as a function of the Er{sup 3+} concentration. The structural and thermal properties of the viscous solutions and powder materials obtained after the heat-treatment at 1000, 1100 and 1200 °C for 4 h were evaluated by XRD, FTIR and TG/DTA analysis. The results showed the formation of pure CaYAlO{sub 4} tetragonal crystalline phase after heat-treatment at 1100 °C and 1200 °C. Intense emission in the visible region under excitation at 980 nm was attributed to upconversion process, from Er{sup 3+} intra-configurational f–f transitions. The emissions were assigned to the transitions {sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} and {sup 4}S{sub 3/2}→{sup 4}I{sub 15/2} (green region), and {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} (red region) energy levels. The ratio between emission band integrated areas assigned to the red and green emissions increased as a function of Er{sup 3+} concentration. Under excitation at 980 nm with 100 mW of power pump, the materials also showed intense and broadening emission with maximum at 1520 nm with FWHM of 84.74 nm for the sample CaYAlO{sub 4}:1.5% Er{sup 3+}/1.2% Yb{sup 3+} heat-treated at 1000 °C for 4 h. The photoluminescence properties showed that these materials are promising for use in C-telecom band as optical amplifier biological marker or/and solid-state laser devices under excitation at 980 nm.

  1. Double NIR laser stimulation and enhancing the thermal sensitivity of Er3+/Tm3+/Nd3+ doped multilayer core-shell nanoparticles.

    Science.gov (United States)

    Ba, Zhaojing; Hu, Min; Zhao, Yiming; Wang, Yiqing; Wang, Jing; Zhang, Zhenxi

    2018-06-04

    Non-contact thermal sensors are important devices to study cellular processes and monitor temperature in vivo. Herein, a novel highly sensitive nanothermometer based on NaYF4:Yb,Er@ NaYF4@NaYF4:Yb,Tm@ NaYF4:Nd (denoted as Er@Y@Tm@Nd) was prepared by a facile solvothermal method. When excited by the NIR light of 808 and 980 nm, the as-prepared Er@Y@Tm@Nd nanoparticles could emit both blue and green light respectively, since the lanthanide cations responsible for these emissions are gathered inside this nanostructure. The green and blue light intensity ratio exhibits obvious temperature dependence in the range of the physiological temperature. Additionally, the fluorescence intensity of Er3+ and Tm3+ are also greatly enhanced due to the multilayer structure that implies avoiding the Er3+ and Tm3+ energy cross-relaxation by introduction of a NaYF4 wall between them. The as-prepared core-shell-shell-shell structure with Er3+ and Tm3+ in different layers improves dozens of times of the thermal sensitivity based on the non-thermal coupling levels of the probe: the maximum values for the sensitivity are 2.95% K-1 (IEr-521/ITm-450) and 6.30% K-1 (ITm-474/IEr-541) when excited by 980 and 808 nm laser sources respectively. These values are well above those previously reported (< 0.7% K-1), indicating that the prepared nanostructures are temperature sensors with excellent thermal sensitivity and sensitive to NIR wavelength excitation that makes them highly preferred for thermal detection. © 2018 IOP Publishing Ltd.

  2. Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

    Science.gov (United States)

    Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

    2008-10-01

    The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

  3. Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

    International Nuclear Information System (INIS)

    Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

    2008-01-01

    The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm -3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x10 19 cm -3

  4. Energy transfer between doubly doped Er3+, Tm3+and Ho3+ rare earth ions in SiO2 nanoparticles

    CSIR Research Space (South Africa)

    Dhlamini, MS

    2011-04-01

    Full Text Available + and Ho3+ ions are reported. Another emission peak in the near infra-red (NIR) region at 875 nm from Er3+ was also measured. Blue emission at 460 nm, red at 705 nm and a NIR peak in the region of 865 nmfrom Tm3+ were observed. Red, green and blue (RGB...

  5. Doping Mechanisms in Wide Bandgap Group III Nitrides

    National Research Council Canada - National Science Library

    Wessels, Bruce

    2002-01-01

    .... The main objective was to determine the factors, which limit p-type conductivity in GaN and its alloys and to develop doping techniques to increase the hole concentrations to greater than 10(exp 19)/cu cm...

  6. Fabrication and PL of Al-doped gallium nitride nanowires

    International Nuclear Information System (INIS)

    Zhou Shaomin

    2006-01-01

    Mass Al-doped GaN nanowires with an average diameter of about 50 nm and lengths up to several millimeters are fabricated by a CVD approach. The as-fabricated products have a single crystal phase and grow along the direction. The growth of Al-doped GaN nanowires is suggested for quasi-vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires, a novel strong ultraviolet PL spectrum (from 3.3 to 3.7 eV) appears with a doping Al where the Al-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail

  7. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  8. Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

    2010-07-01

    Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

  9. Efficient green and red up-conversion emissions in Er/Yb co-doped TiO{sub 2} nanopowders prepared by hydrothermal-assisted sol–gel process

    Energy Technology Data Exchange (ETDEWEB)

    Salhi, Rached, E-mail: salhi_rached@yahoo.fr [Laboratoire de chimie industrielle, Ecole Nationale d’ingénieurs de Sfax, Université de Sfax, 3018 Sfax (Tunisia); Deschanvres, Jean-Luc [Laboratoire des Matériaux et du Génie Physique, 3 Parvis Louis Néel, BP 257, 38016 Grenoble (France)

    2016-08-15

    In this work, erbium and ytterbium co-doped titanium dioxide (Er–Yb:TiO{sub 2}) nanopowders have been successfully prepared by hydrothermal-assisted sol–gel method using supercritical drying of ethyl alcohol and annealing at 500 °C for 1 h. Nanopowders were prepared with fixed 5 mol% Erbium concentration and various Ytterbium concentrations of 5 and 10 mol%. The powders were characterized by studying their structural, morphology and photo-luminescent properties. The annealing treatment at 500 °C was found to enhance the crystallinity of the TiO{sub 2} anatase structure and the upconversion (UC) emission of the nanopowders. UC emissions were investigated under 980 nm excitation, and the Er–Yb:TiO{sub 2} nanopowders exhibited the intense green (520–570 nm) and red (640–690 nm) upconverted emissions of Er ions originating from an efficient Yb–Er energy transfer process. The absolute upconversion quantum yield (UC-QY) of each nanopowders was measured for the UC emissions centered at 525, 550 and 655 nm at varying excitation power densities. UC-QY analysis has revealed that 5 mol% Er–5 mol% Yb:TiO{sub 2} nanopowders possess the highest total quantum yield of 2.8±0.1% with a power density of 16.7 W/cm{sup 2}. These results make these nanopowders promising materials for efficient upconversion in photonic applications.

  10. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  11. Study on the influence of annealing effects in GaN VPE

    International Nuclear Information System (INIS)

    Furtado, M.

    1983-06-01

    The effects of annealing that occur during VPE growth of GaN were investigated. GaN powder (and epilayers) samples were annealed in Ar, N 2 , H 2 , NH 3 , HC1 + N 2 and HC1 + H 2 (N 2 , H 2 and HC1 + N 2 ), respectively; under a range of experimental conditions of interest for preparing electroluminescent devices. Good surface appearence Zn doped epilayers were also used under N 2 in order to investigate surface morphology changes due to thermal decomposition. It was found that GaN reacts with H 2 , remains stable under NH 3 , and the effects of thermal decomposition are somewhat enhanced with HC1. The epilayers' behaviour under thermal decomposition and HC1 are interpreted by the greater stability of the (0001) crystal plane, which accounts for the improvement of the surface quality under special growth conditions. Significant observations are reported concerning GaN decomposition in different ambients [pt

  12. Up-conversion emission of Er{sup 3+}/Yb{sup 3+}co-doped BaBi{sub 2}Nb{sub 2}O{sub 9} (BBN) phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Façanha, M.X., E-mail: marcello.facanha@uece.br [Departamento de Química, Centro de Ciências, Universidade Federal do Ceará (UFC), Fortaleza, Ceará (Brazil); Faculdade de Educação de Crateús (FAEC), Universidade Estadual do Ceará (UECE), Fortaleza, Ceará (Brazil); Laboratório de Telecomunicações e Ciências e Engenharia de Materiais (LOCEM), Universidade Federal do Ceará (UFC), Fortaleza, Ceará (Brazil); Nascimento, J.P.C. do [Departamento de Química, Centro de Ciências, Universidade Federal do Ceará (UFC), Fortaleza, Ceará (Brazil); Laboratório de Telecomunicações e Ciências e Engenharia de Materiais (LOCEM), Universidade Federal do Ceará (UFC), Fortaleza, Ceará (Brazil); Silva, M.A.S., E-mail: marceloassilva@yahoo.com.br [Laboratório de Telecomunicações e Ciências e Engenharia de Materiais (LOCEM), Universidade Federal do Ceará (UFC), Fortaleza, Ceará (Brazil); and others

    2017-03-15

    On this paper, polycrystalline samples of the tetragonal systems BaBi{sub 2}Nb{sub 2}O{sub 9} (BBN) and BBN co-doped with Er{sup 3+}/Yb{sup 3+} (BBN: 0.04Er{sup 3+}yYb{sup 3+}, where y=0.02, 0.04, 0.06 and 0.08 mol%) were synthesized by the solid state method. The crystalline structure and photoluminescent properties of the ceramic phosphors were investigated by powder X-ray diffraction (PXRD), Raman spectroscopy and spectral analysis of up-conversion (UC) emission. The results reveal that all compositions crystallize in the I4/mmm space group at room temperature, and show UC green emissions (centered at 525 nm and 550 nm) and red (around 660 nm) coming from ({sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}→{sup 4}I{sub 15/2}) and ({sup 4}F{sub 9/2}→{sup 4}I{sub 15/2}) transitions, respectively, under excitation at 980 nm. Increasing variations of the Yb{sup 3+} sensitizer concentration in the host BBN, lead to a significant intensity increase in both UC emissions due to the efficiency of the energy-transfer process. The BBN: 0.04 mol%Er{sup 3+}0.08 mol%Yb{sup 3+} composition showed the higher intensity bands, thus establishing the BBN as an alternative host material for luminescent centers.

  13. Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

    International Nuclear Information System (INIS)

    Simon, Roland B.; Anaya, Julian; Kuball, Martin

    2014-01-01

    The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates

  14. Controllable synthesis and crystal structure determined upconversion luminescence properties of Tm{sup 3+} (Er{sup 3+}) ions doped YbF{sub 3} and NaYbF{sub 4} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Tao [Institute of Photonics, Faculty of Science, Ningbo University, Ningbo 315211 (China); Qin, Weiping, E-mail: wpqin@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhou, Jun [Institute of Photonics, Faculty of Science, Ningbo University, Ningbo 315211 (China)

    2014-04-01

    Graphical abstract: - Highlights: • The synthesis of YbF{sub 3} and NaYbF{sub 4} crystals was successfully fulfilled by hydrothermal method. • The phase and morphology of products were adjusted by changing the hydrothermal conditions. • Relatively enhanced ultraviolet upconversion emissions were observed in YbF{sub 3} nanocrystals. • The crystalline phase impact on the upconversion luminescence was systematically studied. - Abstract: The synthesis of YbF{sub 3} and NaYbF{sub 4} crystals was successfully fulfilled by a facial hydrothermal method. The phase and morphology of the products were adjusted by changing the surfactant additive and fluorine source and tuning the pH value of the initial solution. The products with various morphologies range from octahedral nanoparticles, corn-like nanobundles, nanospheres, microrods, and hollow microprisms were prepared at different conditions. The growth mechanism of these products has been systematically studied. Impressively, relatively enhanced high order ultraviolet (UV) upconversion (UC) luminescence was observed in Tm{sup 3+} (Er{sup 3+}) ions doped YbF{sub 3} nanocrystals (NCs) compared with NaYbF{sub 4} microcrystals under the excitation of 980 nm infrared laser. The investigation results reveal that the crystal symmetry of matrix has significant effect on the spectra and lifetimes of the doping lanthanide ions. The simply synthesized water soluble YbF{sub 3} NCs with efficient UV UC luminescence may find potential application in biochemistry.

  15. GaN への Mg イオン注入によるp 型層形成の検討

    OpenAIRE

    西城, 祐亮

    2016-01-01

    A selective area doping technology is required for making high performance GaN devices. Usually,ion implantation is used as a method of the selective area doping, but formation of the p-type conductive layer by ion implantation has been difficult for GaN. Mg-ion implanted layers in n--GaN on a high quality free-standing GaN substrate show p-type conduction after high temperature annealing at 1230°C,but Implanted layer consisted of uniform p-type crystalline area and localized crystal defect...

  16. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

    Science.gov (United States)

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

    2016-02-01

    Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

  17. Synthesis of green emission upconversion phosphor nanosheets (LaNb{sub 2}O{sub 7}) doped with Er{sup 3+} and Yb{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Takasugi, Soichi [Course of Science and Technology, Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Iida, Riku [Department of Chemistry, School of Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Tomita, Koji, E-mail: tomita@keyaki.cc.u-tokai.ac.jp [Department of Chemistry, School of Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Iwaoka, Michio [Course of Science and Technology, Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Department of Chemistry, School of Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Katagiri, Kiyofumi [Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527 (Japan); Osada, Minoru [International Center for Materials Nano architectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Kakihana, Masato [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2016-05-15

    LaNb{sub 2}O{sub 7}:Er{sup 3+},Yb{sup 3+} upconversion (UPC) phosphor nanosheets were prepared by exfoliating a KLaNb{sub 2}O{sub 7}:Er{sup 3+},Yb{sup 3+} layered compound. Highly crystalline nanosheets with a thickness and lateral size of 3.91 nm and approximately 300 nm, respectively, were obtained. The UPC emission intensity of the nanosheets was 7.6 times greater than that of mechanically milled particles (100–500 nm) of bulk KLaNb{sub 2}O{sub 7}:Er{sup 3+},Yb{sup 3+}. The UPC emission intensities of the nanosheets dispersed in different solvents (H{sub 2}O, D{sub 2}O, CH{sub 3}OH, CH{sub 2}Cl{sub 2}, and CCl{sub 4}) were measured, and the intensities were observed to decrease in the order CCl{sub 4}>CH{sub 2}Cl{sub 2}>D{sub 2}O>CH{sub 3}OH>H{sub 2}O. Because of the large surface area of the nanosheets, their emission intensity was decreased depending on the solvent's vibrational energy. - Highlights: • La{sub 0.45}Er{sub 0.05}Yb{sub 0.5}Nb{sub 2}O{sub 7} nanosheets were synthesized by a soft breakdown method (exfoliation). • The lateral size and thickness of the nanosheets were approximately 300 nm and approximately 3.91 nm, respectively. • The exfoliated nanosheets exhibited bright upconversion emission 7.6 times more intense than that of the milled sample (100–500 nm). • The nanosheets dispersed in solvents exhibited greatly different upconversion emission intensities depending on the solvent's vibrational energy.

  18. Up-conversion and near infrared luminescence in Er3+/Yb3+ co-doped glass-ceramic containing MgGa2O4 nano-crystals

    International Nuclear Information System (INIS)

    Sun, Jiaju; Yu, Lixin; Li, Fuhai; Wei, Shuilin; Li, Songchu

    2016-01-01

    The MgO–Ga 2 O 3 –SiO 2 (MG-S) glasses and nanocrystalline glass-ceramics (GCs) containing MgGa 2 O 4 nanocrystals codoped with Er 3+ and Yb 3+ were prepared by a simple sol–gel method. The formation of MgGa 2 O 4 nanocrystals in the GCs was confirmed by the X-ray diffraction (XRD). Their morphology was investigated applying high-resolution transmission electron microscopy (HRTEM). Stark splitting of near infrared (NIR) and up-conversion (UC) emission implies that the Er 3+ is incorporated into MgGa 2 O 4 nanocrystals. The effect of the MgO, Ga 2 O 3 content and sintering temperature on the structure of the prepared samples was systematically studied. Under 980 nm excitation, intense UC and NIR emission (1530 nm) were observed in the MG-S GCs by efficient energy transfer from Yb 3+ to Er 3+ . The two-photon process was confirmed to be responsible for both the green and red UC emissions. - Highlights: • It is interesting that the CIE chromaticity coordinates of the several prepared CaMO 4 :Eu samples by a hydrothermal method are very close to the standard of white light.

  19. On observation of the downconversion mechanism in Er{sup 3+}/Yb{sup 3+} co-doped tellurite glass using thermal and optical parameters

    Energy Technology Data Exchange (ETDEWEB)

    Figueiredo, M.S.; Santos, F.A. [Universidade Federal da Grande Dourados, Faculdade de Ciências Exatas e Tecnologias, Dourados, MS (Brazil); Yukimitu, K.; Moraes, J.C.S. [Universidade Estadual Paulista, UNESP, Departamento de Física e Química, Av. Brasil, 56, 15385-000 Ilha Solteira, SP (Brazil); Nunes, L.A.O. [Instituto de Física de São Carlos, Universidade de São Paulo, CP 369, 13560-970 São Carlos, SP (Brazil); Andrade, L.H.C. [Grupo de Espectroscopia Óptica e Fototérmica, Universidade Estadual de Mato Grosso do Sul, Cidade Universitária de Dourados, CP 351, Dourados, MS (Brazil); Lima, S.M., E-mail: smlima@uems.br [Grupo de Espectroscopia Óptica e Fototérmica, Universidade Estadual de Mato Grosso do Sul, Cidade Universitária de Dourados, CP 351, Dourados, MS (Brazil)

    2015-01-15

    In this work we report the observed downconversion (DC) mechanism in Er{sup 3+}/Yb{sup 3+}-codoped tellurite glasses (in mol%, 80TeO{sub 2}–10Li{sub 2}O–10TiO{sub 2}). The samples were synthesized by the conventional melt-quenching method and then studied using optical spectroscopy and thermal lens spectroscopy (TLS). These characterizations enabled investigation of the radiative and nonradiative processes involved in energy transfer from erbium to ytterbium. The visible Er{sup 3+} fluorescence intensities decreased as a function of the Yb{sup 3+} concentration, and there was a corresponding increase in the ytterbium emission at around 980 nm. Simultaneously, there was a reduction in the heat-generated due nonradiative decays (∼21%) when ytterbium was added. This temperature change was measured by TLS measurements and the results corroborate with the indicated by spectroscopic interpretation. - Highlights: • Energy transfer from erbium to ytterbium in tellurite glass. • ∼56% of cross-relaxation efficiency from Er{sup 3+} to Yb{sup 3+}. • Downconversion effect in tellurite glasses. • Downconversion effect observation by thermal lens spectroscopy.

  20. ECV profiling of GaAs and GaN HEMT heterostructures

    Science.gov (United States)

    Yakovlev, G.; Zubkov, V.

    2018-03-01

    AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

  1. Thermal quenching of the yellow luminescence in GaN

    Science.gov (United States)

    Reshchikov, M. A.; Albarakati, N. M.; Monavarian, M.; Avrutin, V.; Morkoç, H.

    2018-04-01

    We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ˜0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.

  2. Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

    Science.gov (United States)

    Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

    2015-12-01

    P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

  3. Near-infrared emission and upconversion in Er{sup 3+}-doped TeO{sub 2}–ZnO–ZnF{sub 2} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n 48013 Bilbao (Spain); Morea, R.; Gonzalo, J. [Instituto de Optica, Consejo Superior de Investigaciones Científicas CSIC, Serrano 121, 28006 Madrid (Spain); Arriandiaga, M.A. [Departamento de Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco UPV/EHU, Apartado 644, Bilbao (Spain); Fernandez, J. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Balda, R., E-mail: wupbacrr@bi.ehu.es [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain)

    2013-08-15

    We have investigated the near infrared emission and upconversion of Er{sup 3+} ions in two different compositions of glasses based on TeO{sub 2}, ZnO, and ZnF{sub 2} for different ErF{sub 3} concentrations (0.5, 1, 2, and 3 wt%). Judd–Ofelt intensity parameters have been determined and used to calculate the radiative transition probabilities and radiative lifetimes. The infrared emission at around 1532 nm corresponding to the {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} transition is broader by nearly 30 nm if compared to silica based glasses. The stimulated emission cross section is higher for the glass with the lowest content of ZnF{sub 2} which also shows higher values of the figure of merit for bandwidth. On the other hand, the lifetimes of the excited states are longer for the glass with the highest content of ZnF{sub 2}. Green and red emissions corresponding to transitions ({sup 2}H{sub 11/2},{sup 4}S{sub 3/2})→{sup 4}I{sub 15/2} and {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} have been observed under excitation at 801 nm and attributed to a two photon process. The temporal evolution of the green emission suggests the presence of excited state absorption and energy transfer upconversion processes to populate the {sup 4}S{sub 3/2} level. In the case of the red emission, its increase as ErF{sub 3} concentration increases together with its temporal behavior indicate that for ErF{sub 3} concentrations higher than 0.5 wt%, level {sup 4}F{sub 9/2} is populated by multiphonon relaxation from level {sup 4}S{sub 3/2} and energy transfer processes. -- Highlights: ► High absorption and emission cross-sections for the {sup 4}I{sub 13/2}↔{sup 4}I{sub 15/2} transition suitable for EDFAs. ► The increase of fluorine content leads to longer lifetimes of excited levels of Er{sup 3+} ions. ► Increase of the red upconversion emission with concentration due to ETU processes.

  4. Room temperature photoluminescence in crystalline/amorphous Er-doped Cd{sub 2}V{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Cid-Garcia, A. [Benemerita Universidad Autonoma de Puebla. Postgrado en Fisica Aplicada. Facultad de Ciencias Fisico-Matematicas, Mexico (Mexico); Lozada-Morales, R., E-mail: rlozada@fcfm.buap.mx [Benemerita Universidad Autonoma de Puebla. Postgrado en Fisica Aplicada. Facultad de Ciencias Fisico-Matematicas, Mexico (Mexico); Lopez-Calzada, G. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro. 76001 (Mexico); Zayas, Ma. E. [Departamento de Investigacion en Fisica de la Universidad de Sonora, Edificio 3I, Blvd. Edificio 5 E, Luis Encinas s/n, Col. Centro, 83000. Hermosillo, Sonora, Mexico (Mexico); Zelaya Angel, O. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados, P.O. Box 14-740, Mexico 07360 D. F. (Mexico); and others

    2012-06-15

    Er{sup 3+} ions were introduced into a new type of oxide matrixes prepared with different proportions of CdO and V{sub 2}O{sub 5}. The source of Er{sup 3+} employed was Er(NO{sub 3}){sub 3}{center_dot}5H{sub 2}O, which yielded an Er{sup 3+} concentration of {approx}1 at%. Depending on the reactants proportions, the samples resulted in crystalline or amorphous structures. X-ray diffraction indicated that the crystalline samples were constituted by polycrystalline Cd{sub 2}V{sub 2}O{sub 7}, in agreement with Raman spectroscopy measurements. Depending on the proportions of the component oxides, the band gap changed in the 2.49-1.77 eV energy range, as determined through photoacoustic spectroscopy. From photoluminescence spectra, the following electronic transitions of Er{sup 3+} were observed in both types of samples: {l_brace}{sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, {sup 4}F{sub 9/2}, {sup 4}I{sub 9/2}{r_brace}{yields}{sup 4}I{sub 15/2} and {sup 4}S{sub 3/2}{yields}{sup 4}I{sub 13/2}. In the case of crystalline samples manifolds, originating from the Stark effect, were measured for the {l_brace}{sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, {sup 4}F{sub 9/2}{r_brace}{yields}{sup 4}I{sub 15/2} and {sup 4}S{sub 3/2}{yields}{sup 4}I{sub 13/2} transitions. - Highlights: Black-Right-Pointing-Pointer The Cd{sub 2}V{sub 2}O{sub 7} has been fabricated in amorphous and crystalline phases. Black-Right-Pointing-Pointer The band gap of crystalline samples varied in the 2.49-2.41 eV range. Black-Right-Pointing-Pointer The absorption edge for the glasses had lower values with a minimum of 1.77 eV. Black-Right-Pointing-Pointer The {l_brace}{sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, {sup 4}F{sub 9/2}, {sup 4}I{sub 9/2}{r_brace}{yields}{sup 4}I{sub 15/2} and {sup 4}S{sub 3/2}{yields}{sup 4}I{sub 13/2,} were observed in PL.

  5. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

    2015-02-28

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  6. Structural and optical properties of Er{sup 3+} doped SiO{sub 2}–Al{sub 2}O{sub 3}–GeO{sub 2} compounds prepared by a simple route

    Energy Technology Data Exchange (ETDEWEB)

    Filho, Fausto M. Faria [Instituto de Física, Universidade Federal de Goiás-UFG, Campus II, Caixa Postal 131, CEP 74001-970 Goiânia, GO (Brazil); Gonçalves, Rogéria R. [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo-USP, Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP (Brazil); Ribeiro, Sidney J.L. [Institute of Chemistry, São Paulo State University-UNESP, Rua Professor Francisco Degni, 55, CEP 14801-970 Araraquara, SP (Brazil); Maia, Lauro J.Q., E-mail: lauro@ufg.br [Instituto de Física, Universidade Federal de Goiás-UFG, Campus II, Caixa Postal 131, CEP 74001-970 Goiânia, GO (Brazil)

    2015-04-15

    Highlights: • We developed a simple route to obtain gels and powders using GeO{sub 2}, TEOS and TMAH solution. • Al{sub 6}Ge{sub 2}O{sub 13} crystalline nanoparticles embedded in amorphous matrix were obtained. • The Al{sub 2}O{sub 3} enhance Er{sup 3+} dispersion in GeO{sub 2}–SiO{sub 2} increasing its emission and the full width at half maximum from 41 to 56 nm. • The {sup 4}I{sub 13/2} Er{sup 3+} level lifetime varies between 4.8 and 5.6 ms (1533 nm emission). - Abstract: Samples of (1 − x)[0.70SiO{sub 2} + 0.30Al{sub 2}O{sub 3}] + xGeO{sub 2} compositions, containing x = 0.05, 0.10, 0.20, 0.30, 0.40 and 0.50, and doped with 1 mol% of Er{sup 3+}, were prepared by a mixed route (sol–gel process and Pechini method). Transparent gels were synthesized and homogeneous powders were obtained by heat treatments from 800 °C to 1050 °C. The final powders were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and high-resolution transmission electron microscopy. The optical properties were studied by photoluminescence measurements in the infrared region, and the average lifetime of the metastable state {sup 4}I{sub 13/2} of Er{sup 3+} ions and the full-width at half maximum (FWHM) were determined. A silica-rich amorphous phase and nanocrystallites with orthorhombic structure of Al{sub 6}Ge{sub 2}O{sub 13} phase were obtained. The samples present a broad emission centered at around 1532 nm under excitation at 977 nm, with a FWHM of 53 nm and a lifetime of 5.6 ms. The synthesized compounds by an easy chemical procedure are potentially applicable in integrated optical systems.

  7. Optical and dielectric properties of isothermally crystallized nano-KNbO3 in Er3+-doped K2O-Nb2O5-SiO2 glasses.

    Science.gov (United States)

    Chaliha, Reenamoni Saikia; Annapurna, K; Tarafder, Anal; Tiwari, V S; Gupta, P K; Karmakar, Basudeb

    2010-01-01

    Precursor glass of composition 25K(2)O-25Nb(2)O(5)-50SiO(2) (mol%) doped with Er(2)O(3) (0.5 wt% in excess) was isothermally crystallized at 800 degrees C for 0-100 h to obtain transparent KNbO(3) nanostructured glass-ceramics. XRD, FESEM, TEM, FTIRRS, dielectric constant, refractive index, absorption and fluorescence measurements were carried out to analyze the morphology, dielectric, structure and optical properties of the glass-ceramics. The crystallite size of KNbO(3) estimated from XRD and TEM is found to vary in the range 7-23 nm. A steep rise in the dielectric constant of glass-ceramics with heat-treatment time reveals the formation of ferroelectric nanocrystalline KNbO(3) phase. The measured visible photoluminescence spectra have exhibited green emission transitions of (2)H(11/2), (4)S(3/2)-->(4)I(15/2) upon excitation at 377 nm ((4)I(15/2)-->(4)G(11/2)) absorption band of Er(3+) ions. The near infrared (NIR) emission transition (4)I(13/2)-->(4)I(15/2) is detected around 1550 nm on excitation at 980 nm ((4)I(15/2)-->(4)I(11/2)) of absorption bands of Er(3+) ions. It is observed that photoluminescent intensity at 526 nm ((2)H(11/2)-->(4)I(15/2)), 550 nm ((4)S(3/2)-->(4)I(15/2)) and 1550 nm ((4)I(13/2)-->(4)I(15/2)) initially decrease and then gradually increase with increase in heat-treatment time. The measured lifetime (tau(f)) of the (4)I(13/2)-->(4)I(15/2) transition also possesses a similar trend. The measured absorption and fluorescence spectra reveal that the Er(3+) ions gradually enter into the KNbO(3) nanocrystals. Copyright 2009 Elsevier B.V. All rights reserved.

  8. Hydrothermal synthesis of superparamagnetic and red luminescent bifunctional Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er core@shell monodisperse nanoparticles and their subsequent ligand exchange in water

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Zhenli; Du, Sinan; Luo, Yang; Liao, Zhijian; Zuo, Fang, E-mail: polymerzf@swun.cn; Luo, Jianbin; Liu, Dong

    2016-08-15

    Graphical abstract: An efficient hydrothermal method was used to fabricate the superparamagnetic and red luminescent bifunctional Fe{sub 3}O{sub 4}@Mn{sup 2(*)+}-doped NaYF{sub 4}:Yb/Er nanoparticles (NPs) with core@shell structures through a seed-growth procedure. Then using PEG phosphate ligand to displace oleate from the as-synthesized NPs, hydrophilic Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er NPs with good water solubility are obtained. - Highlights: • Homogeneous size distribution of magnetic-upconversion core@shell structured nanoparticles (NPs) were synthesized. • The core@shell nanostructures were obtained by seed-growth method. • The oleic acid coated Fe{sub 3}O{sub 4} NPs were used as seeds and cores. • The magnetic-upconversion NPs emitted red luminescence under a 980 nm laser. • Synthesized magnetic-upconversion NPs were phase transferred using ligand exchange process. - Abstract: We report the use of an efficient hydrothermal method to synthesize superparamagnetic and red luminescent bifunctional Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er nanoparticles (NPs) with core@shell structures via a seed-growth procedure. Oleic acid coated Fe{sub 3}O{sub 4} (OA-Fe{sub 3}O{sub 4}) NPs were initially synthesized using a coprecipitation method. The as-synthesized OA-Fe{sub 3}O{sub 4} NPs were then used as seeds, on which the red upconversion luminescent shell (Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er) was formed. Furthermore, hydrophobic to hydrophilic surface modification of the Fe{sub 3}O{sub 4}@Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er NPs was achieved via a ligand exchange method where oleic acid was displaced by a PEG phosphate ligand [PEG = poly(ethylene glycol)]. These materials were characterized by means of transmission electron microscopy (TEM), X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, and vibrating sample magnetometry (VSM). The Fe{sub 3}O{sub 4} cores were uniformly coated with a Mn{sup 2+}-doped NaYF{sub 4}:Yb/Er

  9. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    International Nuclear Information System (INIS)

    Patsha, Avinash; Dhara, Sandip; Tyagi, A. K.

    2015-01-01

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A 1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A 1 (LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires

  10. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    Energy Technology Data Exchange (ETDEWEB)

    Patsha, Avinash, E-mail: avinash.phy@gmail.com, E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K. [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2015-09-21

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

  11. Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

    NARCIS (Netherlands)

    de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

    2014-01-01

    We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

  12. Enhanced green upconversion by controlled ceramization of Er{sup 3+}–Yb{sup 3+} co-doped sodium niobium tellurite glass–ceramics for low temperature sensors

    Energy Technology Data Exchange (ETDEWEB)

    Suresh Kumar, J., E-mail: suresh@ua.pt; Pavani, K.; Graça, M.P.F.; Soares, M.J.

    2014-12-25

    Highlights: • Upconversion luminescence improved in glass–ceramics compared to host glass. • Judd–Ofelt and radiative parameters calculated. • NIR decay curve results concur the results of improved luminescence. • Temperature dependent upconversion support the use of materials for sensors. - Abstract: Tellurite based glasses are well-known for their upconversion properties besides having a disadvantage of low mechanical strength dragging them away from practical applications. The present work deals with preparation of sodium niobium tellurite (SNT) glasses using melt quenching method, in which small quantities of boron and silicon in the form of oxides are added to improve their mechanical properties. Controlled heat treatment is performed to ceramize the prepared glasses based on the thermal data given by DTA. XRD and SEM profiles of the glass–ceramics which confirmed the formation of crystalline monoclinic Sodium Tellurium Niobium Oxide (Na{sub 1.4}Nb{sub 3}Te{sub 4.9}O{sub 18}) phase (JCPDS card No. 04–011-7556). Upconversion measurements in the visible region were made for the prepared Er{sup 3+}–Yb{sup 3+} co-doped glasses and glass–ceramics with 980 nm laser excitation varying the laser power and concentration of Er{sup 3+} ions. Results showed that the upconversion luminescence intensity was enhanced by ten times in SNT glass–ceramics compared to that in the SNT glasses. Decay curves give evidence of high performance of glass–ceramics compared to glasses due to ceramization and structural changes. Temperature dependent visible upconversion was performed to test the ability of efficient SNT glass–ceramic at low temperatures and variation of upconversion intensities was studied.

  13. Unusual broadening of the NIR luminescence of Er{sup 3+}-doped Nb{sub 2}O{sub 5} nanocrystals embedded in silica host: Preparation and their structural and spectroscopic study for photonics applications

    Energy Technology Data Exchange (ETDEWEB)

    Aquino, Felipe Thomaz; Pereira, Rafael R. [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP (Brazil); Ferrari, Jefferson Luis [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP (Brazil); Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, 36301-160 São João Del Rei, MG (Brazil); Ribeiro, Sidney José Lima [Laboratório de Materiais Fotônicos, Instituto de Química, UNESP, Caixa Postal 355, 14801-970 Araraquara, SP (Brazil); Ferrier, Alban; Goldner, Philippe [Chimie-Paristech, Laboratoire de Chimie de la Matière Condensée de Paris, CNRS-UMR 7574, UPMC Univ Paris 06, 11 Rue Pierre et Marie Curie, 75005 Paris (France); and others

    2014-10-15

    This paper reports on the preparation of novel sol-gel erbium-doped SiO{sub 2}-based nanocomposites embedded with Nb{sub 2}O{sub 5} nanocrystals fabricated using a bottom-up method and describes their structural, morphological, and luminescence characterization. To prepare the glass ceramics, we synthesized xerogels containing Si/Nb molar ratios of 90:10 up to 50:50 at room temperature, followed by annealing at 900, 1000, or 1100 °C for 10 h. We identified crystallization accompanying host densification in all the nanocomposites with orthorhombic (T-phase) or monoclinic (M-phase) Nb{sub 2}O{sub 5} nanocrystals dispersed in the amorphous SiO{sub 2} phase, depending on the niobium content and annealing temperature. A high-intensity broadband emission in the near-infrared region assigned to the {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} transition of the Er{sup 3+} ions was registered for all the nanocomposites. The shape and the bandwidth changed with the Nb{sub 2}O{sub 5} crystalline phase, with values achieving up to 81 nm. Er{sup 3+} ions were located mainly in Nb{sub 2}O{sub 5}-rich regions, and the complex structure of the different Nb{sub 2}O{sub 5} polymorphs accounted for the broadening in the emission spectra. The materials containing the T-phase, displayed higher luminescence intensity, longer {sup 4}I{sub 13/2} lifetime and broader bandwidth. In conclusion, these nanostructured materials are potential candidates for photonic applications like optical amplifiers and WDM devices operating in the S, C, and L telecommunication bands. - Highlights: • Rare earth doped Nb{sub 2}O{sub 5} nanocrystals prepared from a bottom-up approach. • Unusual broadband NIR emission in glass ceramic system. • Structural features tuning the luminescence properties. • Potential as optical amplifiers and WDM devices. • Photonic devices operating in the S, C, and L telecommunication.

  14. Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

    Science.gov (United States)

    Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro

    2017-06-01

    Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.

  15. Utilization of visible to NIR light energy by Yb{sup +3}, Er{sup +3} and Tm{sup +3} doped BiVO{sub 4} for the photocatalytic degradation of methylene blue

    Energy Technology Data Exchange (ETDEWEB)

    Regmi, Chhabilal [Research Center for Eco-Multifunctional Nanomaterials, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kshetri, Yuwaraj K. [Department of Advanced Materials Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Ray, Schindra Kumar [Research Center for Eco-Multifunctional Nanomaterials, Sun Moon University, Chungnam 31460 (Korea, Republic of); Pandey, Ramesh Prasad [Institute of Biomolecule Reconstruction, Department of BT-Convergent Pharmaceutical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Lee, Soo Wohn, E-mail: swlee@sunmoon.ac.kr [Research Center for Eco-Multifunctional Nanomaterials, Sun Moon University, Chungnam 31460 (Korea, Republic of)

    2017-01-15

    Highlights: • Lanthanide doped BiVO{sub 4} as highly efficient upconversion and photocatalytic material. • Well defined beads like morphology for better photocatalytic activity. • Effective utilization of NIR and visible light for efficient photocatalytic degradation of methylene blue. • Nontoxic to human cells, potential for application in biological fields. - Abstract: Lanthanide-doped BiVO{sub 4} semiconductors with efficient photocatalytic activities over a broad range of the solar light spectrum have been synthesized by the microwave hydrothermal method using ethylenediaminetetraacetic acid (EDTA). The structural, morphological, and optical properties of the as-synthesized samples were evaluated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray powder diffraction (XRD), Raman spectroscopy, FT-IR spectroscopy, UV–vis diffuse reflectance spectroscopy (DRS), and photoluminescence spectroscopy (PL). The chemical compositions were analyzed by X-ray photoelectron spectroscopy (XPS). The toxicity of the samples was measured using Mus musculus skin melanoma cells (B16-F10 (ATCC{sup ®} CRL-6475™)) and were found to be nontoxic for human cells. The photocatalytic efficiency of the prepared samples was evaluated by methylene blue (MB) degradation. The best photocatalytic activity was shown by BiVO{sub 4} with 6:3:3 mol percentage of Yb{sup +3}:Er{sup +3}:Tm{sup +3} in all solar light spectrum. The synthesized samples possess low band gap energy and a hollow structure suitable for the better photocatalytic activity. The observed NIR photoactivity supports that the upconversion mechanism is involved in the overall photocatalytic process. Therefore, this approach provides a better alternative upconversion material for integral solar light absorption.

  16. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

    International Nuclear Information System (INIS)

    Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

    2012-01-01

    We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

  17. Piezo-generator integrating a vertical array of GaN nanowires.

    Science.gov (United States)

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  18. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  19. The influence of Ag content and annealing time on structural and optical properties of SGS antimony-germanate glass doped with Er3+ ions

    Science.gov (United States)

    Zmojda, J.; Kochanowicz, M.; Miluski, P.; Baranowska, A.; Basa, A.; Jadach, R.; Sitarz, M.; Dorosz, D.

    2018-05-01

    A series of erbium doped SGS antimony-germanate glass embedding silver (Ag0) nanoparticles have been synthesized by a one-step melt-quench thermochemical reduction technique. The effect of NPs concentration and annealing time on the structural and photoluminescent (PL) properties were investigated. The Raman spectra as a function of temperature measured in-situ allow to determine the structural changes in vicinity of Ag+ ions and confirmed thermochemical reduction of Ag+ ions by Sb3+ ions. The surface plasmon resonance absorption band was evidenced near 450 nm. The impact of local field effect generated by Ag0 nanoparticles (NPs) and energy transfer from surface of silver NPs to trivalent erbium ions on near-infrared and up-conversion luminescence was described in terms of enhancement and quench phenomena.

  20. Preparation of K+-Doped Core-Shell NaYF4:Yb, Er Upconversion Nanoparticles and its Application for Fluorescence Immunochromatographic Assay of Human Procalcitonin.

    Science.gov (United States)

    Tang, Jie; Lei, Lijiang; Feng, Hui; Zhang, Hongman; Han, Yuwang

    2016-11-01

    In the present study, we reported a convenient route to prepare well dispersed and functionalized K + -doped core-shell upconversion nanoparticles (UCP) by layer-by-layer (LbL) assembly of polyelectrolytes. UCP was firstly transferred to aqueous phase using cationic surfactant cetyl trimethyl ammonium bromide (CTAB) via hydrophobic interaction without removing the existing oleic acid (OA). Then the positively charged hydrophilic UCP@CTAB was further alternately deposited with negatively charged [poly (sodium 4-styrenesulfonate)] (PSS), positively charged [poly (allylamine hydrochloride)] (PAH) and negatively charged [poly (acrylic acid)] (PAA). The final carboxyl functionalized UCP@CTAB@PSS@PAH@PAA was then conjugated with monoclonal antibody1 (AB1) of procalcitonin (PCT), resulting in successful detection of PCT antigens based on the immunochromatographic assay (ICA). Linear response was achieved from 0 to 10 ng/mL, and the lowest limit of detection (LLD) was 0.18 ng/mL.

  1. A comprehensive study on gain stabilization of Er-doped fiber amplifier in C-band with uniform fiber Bragg grating-pair

    Science.gov (United States)

    Yang, Jiuru; Ma, Yu; OuYang, Yunlun; Liu, Chunyu; Zhang, Jiaxiao

    2014-07-01

    Fiber grating-pair is one of the efficient methods for gain stabilization of erbium doped fiber amplifier (EDFA) but with a gain-reduction of signals, especially in C-band. In order to overcome it, in this article, we establish a configuration of EDFA based uniform fiber grating-pair and conduct a comprehensive study on gain stabilization by varying the reflectivity, center wavelength and 3dB bandwidth of grating, and by varying the channel number and pump power. The numerical results show that under the optimal parameters of grating the gain stabilization at 1550nm is +/-0.044dB with high gain and large dynamic range.

  2. Characterisation of Cs ion implanted GaN by DLTS

    Science.gov (United States)

    Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

    2018-04-01

    Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

  3. Size dictated thermal conductivity of GaN

    Science.gov (United States)

    Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.; Talin, A. Alec; Rost, Christina M.; Maria, Jon-Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-09-01

    The thermal conductivity of n- and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 μm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (1015-1018 cm-3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends—and their overall reduction relative to bulk—are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

  4. Radiotracer Spectroscopy on Group II Acceptors in GaN

    CERN Multimedia

    2002-01-01

    The semiconductor GaN is already used for the production of high power light emitting diodes in the blue and UV spectral range. But the $\\rho$-type doping, which is usually obtained by Mg doping, is still inefficient due to compensation and passivation effects caused by defects present in the material. It is theoretically predicted, that Be is a more promising candidate for $\\rho$-doping with a lower ionization energy of 60meV. It is our goal to investigate the electrical and optical properties of Be- and Mg-related defects in GaN to clarify the problem of compensation and passivation. The used methods are standard spectroscopic methods in semiconductor physics which are improved by using radioactive isotopes. The radioactive decay of $^{7}$Be and $^{28}$Mg is used to clearly correlate different signals with Be or Mg related defects. We intend to use the spectroscopic techniques Deep Level Transient Spectroscopy (DLTS), Thermal Admittance Spectroscopy (TAS), photoluminescence (PL) and additionally Hall-effect...

  5. Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

    Science.gov (United States)

    Tuomisto, Filip; Prozheeva, Vera; Makkonen, Ilja; Myers, Thomas H.; Bockowski, Michal; Teisseyre, Henryk

    2017-11-01

    We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

  6. Dominant intrinsic acceptors in GaN and ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Saarinen, K; Hautakangas, S; Tuomisto, F [Laboratory of Physics, Helsinki University of Technology, PO Box 1100, FI-02015 TKK (Finland)

    2006-09-01

    Positron annihilation measurements reveal negatively charged Ga vacancies in n-type GaN and Zn vacancies in n-type ZnO. Positron trapping at other negative defects is not observed, indicating that cation vacancies are the dominant acceptors in these materials. The vacancy concentrations are the same as the total acceptor densities determined in Hall experiments, confirming the dominant role of the vacancy defects. The Ga vacancy in GaN is found as the main compensating centre over the range of four orders of magnitude of intentional oxygen doping.

  7. Dominant intrinsic acceptors in GaN and ZnO

    International Nuclear Information System (INIS)

    Saarinen, K; Hautakangas, S; Tuomisto, F

    2006-01-01

    Positron annihilation measurements reveal negatively charged Ga vacancies in n-type GaN and Zn vacancies in n-type ZnO. Positron trapping at other negative defects is not observed, indicating that cation vacancies are the dominant acceptors in these materials. The vacancy concentrations are the same as the total acceptor densities determined in Hall experiments, confirming the dominant role of the vacancy defects. The Ga vacancy in GaN is found as the main compensating centre over the range of four orders of magnitude of intentional oxygen doping

  8. Optical decoherence times and spectral diffusion in an Er-doped optical fiber measured by two-pulse echoes, stimulated photon echoes, and spectral hole burning

    International Nuclear Information System (INIS)

    Macfarlane, R.M.; Sun, Y.; Sellin, P.B.; Cone, R.L.

    2007-01-01

    Two-pulse and stimulated photon echoes and spectral hole burning were measured on the transition from the lowest component of the 4 I 15/2 manifold to the lowest component of 4 I 13/2 of Er 3+ in a silicate optical fiber at 1.6 K. The two-pulse echo decays gave decoherence times as long as 230 ns for magnetic fields above 2 T. A large field dependent contribution to the homogeneous line width of >2 MHz was found and interpreted in terms of coupling to magnetic tunneling modes (TLS) in the glass. The stimulated echoes measured at 2 T showed spectral diffusion of 0.8 MHz/decade of time between 0.4 and 500 μs. Spectral diffusion in this high field region is attributed to coupling to elastic TLS modes which have a distribution of flip rates in glasses. Time-resolved spectral hole burning at very low field showed stronger spectral diffusion of 5.7 MHz/decade of time, attributed to coupling to magnetic spin-elastic TLS modes

  9. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

    International Nuclear Information System (INIS)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-01-01

    Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

  10. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-02-08

    Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

  11. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

    International Nuclear Information System (INIS)

    Hwang, J. D.; Lin, C. C.; Chen, W. L.

    2006-01-01

    A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

  12. Transmission electron microscopy of defects and internal fields in GaN structures

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, H

    2001-07-01

    The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10{sup 9}/cm{sup 2}. The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In{sub 0.1}Ga{sub 0.9}N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

  13. Transmission electron microscopy of defects and internal fields in GaN structures

    International Nuclear Information System (INIS)

    Mokhtari, H.

    2001-07-01

    The main aim of this study was to understand the microstructure of GaN and InGaN/GaN and to examine electric fields around the defects, and across the quantum wells by electron holography. For this reason different types of GaN and InGaN/GaN samples have been prepared and studied. Conventional transmission electron microscopy has been used for structural study of two MBE grown GaN/GaAs samples, grown at room temperature and at 340 deg C. The structure of the samples were found to be hexagonal polycrystalline in an amorphous GaN matrix, and textured hexagonal polycrystalline material respectively. The experimental results indicate that the higher growth temperature results in a more crystalline material with a higher density of bigger grain sizes. Different types of undoped and Si doped GaN/Sapphire samples were studied, with respect to the defect structure in GaN films. GaN was found to be a highly defective material with a dislocation density of 10 9 /cm 2 . The majority of the dislocations are edge dislocations. It has been found that nanopipes are open core screw dislocations, and the population and size of the nanopipes is proportional to the Si doping concentration. Dislocation structures were found to depend on the Si doping level in the material, with higher Si doping giving a lower density of dislocations with a more random distribution. In addition some EELS, EDX and HRTEM have been performed on the nanopipes and dislocations in order to investigate Si segregation in the defects. In MBE grown GaN/In 0.1 Ga 0.9 N/GaN SQWs and MQWs, V shaped defects were found to be present in the InGaN regions, which locally reduced the width of the InGaN layers. (author)

  14. Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN

    International Nuclear Information System (INIS)

    Geng, Xuewen; Grismer, Dane A; Bohn, Paul W; Duan, Barrett K; Zhao, Liancheng

    2013-01-01

    Metal-assisted chemical etching is a facile method to produce micro-/nanostructures in the near-surface region of gallium nitride (GaN) and other semiconductors. Detailed studies of the production of porous GaN (PGaN) using different metal catalysts and GaN doping conditions have been performed in order to understand the mechanism by which metal-assisted chemical etching is accomplished in GaN. Patterned catalysts show increasing metal-assisted chemical etching activity to n-GaN in the order Ag < Au < Ir < Pt. In addition, the catalytic behavior of continuous films is compared to discontinuous island films. Continuous metal films strongly shield the surface, hindering metal-assisted chemical etching, an effect which can be overcome by using discontinuous films or increasing the irradiance of the light source. With increasing etch time or irradiance, PGaN morphologies change from uniform porous structures to ridge and valley structures. The doping type plays an important role, with metal-assisted chemical etching activity increasing in the order p-GaN < intrinsic GaN < n-GaN. Both the catalyst identity and the doping type effects are explained by the work functions and the related band offsets that affect the metal-assisted chemical etching process through a combination of different barriers to hole injection and the formation of hole accumulation/depletion layers at the metal–semiconductor interface. (paper)

  15. Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

    Science.gov (United States)

    Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

    2017-05-01

    The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

  16. Doping of III-nitride materials

    OpenAIRE

    Pampili, Pietro; Parbrook, Peter J.

    2016-01-01

    In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

  17. Undoped p-type GaN1-xSbx alloys: Effects of annealing

    Science.gov (United States)

    Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

    2016-12-01

    We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

  18. Unstable behaviour of normally-off GaN E-HEMT under short-circuit

    Science.gov (United States)

    Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

    2018-04-01

    The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

  19. Formation of Ga2O3 by the oxidation of p-type GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pinnisch, Melanie; Reppin, Daniel; Stehr, Jan; Laufer, Andreas; Hofmann, Detlev M.; Meyer, Bruno K. [1. Physikalisches Institut, Justus-Liebig-University, Giessen (Germany)

    2010-07-01

    Both GaN and Ga{sub 2}O{sub 3} are wide band gap semiconductors with energies of 3.45 eV and 4.9 eV, respectively. While GaN can be achieved p- or n-type conducting by doping, Ga{sub 2}O{sub 3} is n-type or high resistive dependent on the presence of oxygen vacancies. We studied the conversion of p-type Mg doped GaN thin films to Ga{sub 2}O{sub 3} by thermal treatments in the temperature range from 600 C to 1200 C and in different atmospheres. Changes of the film properties were studied by means of X-ray diffraction, photo-electron spectroscopy and atomic force microscopy. Optical and magnetic resonance methods were used to investigate the evolution of the dopands and defects.

  20. Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN

    Science.gov (United States)

    Mishkat-Ul-Masabih, Saadat; Luk, Ting Shan; Rishinaramangalam, Ashwin; Monavarian, Morteza; Nami, Mohsen; Feezell, Daniel

    2018-01-01

    We report the fabrication of m-plane nanoporous distributed Bragg reflectors (DBRs) on free-standing GaN substrates. The DBRs consist of 15 pairs of alternating undoped and highly doped n-type ([Si] = ˜3.7 × 1019 cm-3) GaN. Electrochemical (EC) etching was performed to convert the highly doped regions into a porous material, consequently reducing the effective refractive index of the layers. We demonstrate a DBR with peak reflectance greater than 98% at 450 nm with a stopband width of ˜72 nm. The polarization ratio of an incident polarized light source remains identical after reflection from the DBR, verifying that there is no drop in the polarization ratio due to the interfaces between the porous layers. We also quantify the porosity under various EC bias conditions for layers with different doping concentrations. The bias voltage controls the average pore diameter, while the pore density is primarily determined by the doping concentration. The results show that nanoporous DBRs on nonpolar free-standing GaN are promising candidates for high-reflectance, lattice-matched DBR mirrors for GaN-based resonant cavity devices.