WorldWideScience

Sample records for epitaxial silicon carbide

  1. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  2. Electronic properties of epitaxial 6H silicon carbide

    International Nuclear Information System (INIS)

    Wessels, B.W.; Gatos, H.C.

    1977-01-01

    The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

  3. Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

    International Nuclear Information System (INIS)

    Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.

    2004-01-01

    We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample

  4. Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

    International Nuclear Information System (INIS)

    Kukushkin, S A; Osipov, A V

    2017-01-01

    The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

  5. Spin-injection into epitaxial graphene on silicon carbide

    Science.gov (United States)

    Konishi, Keita; Cui, Zhixin; Hiraki, Takahiro; Yoh, Kanji

    2013-09-01

    We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 Å) and a ferromagnetic Co (600 Å) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement.

  6. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

  7. The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide

    International Nuclear Information System (INIS)

    De Heer, Walt A

    2012-01-01

    Graphene electronics was officially invented at the Georgia Institute of Technology in 2003 after experimental and theoretical research on graphene properties starting from 2001. This paper focuses on the motivation and events leading to the invention of graphene electronics, as well as on recent developments. Graphene electronics was originally conceived as a new electronics paradigm to incorporate the room-temperature ballistic and coherent properties of carbon nanotubes in a patternable electronic material. Graphene on silicon carbide was chosen as the most suitable material. Other electronics schemes, involving transferred (exfoliated and chemical vapor deposition-produced) graphitic materials, that operate in the diffusive regime may not be competitive with standard methods and may therefore not significantly impact electronics. In recent years, epitaxial graphene has improved to the point where graphene electronics according to the original concept appears to be within reach. Beyond electronics, epitaxial graphene research has led to important developments in graphene physics in general and has become a leading platform for graphene science as well.

  8. Quantitative analysis of the epitaxial recrystallization effect induced by swift heavy ions in silicon carbide

    International Nuclear Information System (INIS)

    Benyagoub, A.

    2015-01-01

    This paper discusses recent results on the recrystallization effect induced by swift heavy ions (SHI) in pre-damaged silicon carbide. The recrystallization kinetics was followed by using increasing SHI fluences and by starting from different levels of initial damage within the SiC samples. The quantitative analysis of the data shows that the recrystallization rate depends drastically on the local amount of crystalline material: it is nil in fully amorphous regions and becomes more significant with increasing amount of crystalline material. For instance, in samples initially nearly half-disordered, the recrystallization rate per incident ion is found to be 3 orders of magnitude higher than what it is observed with the well-known IBIEC process using low energy ions. This high rate can therefore not be accounted for by the existing IBIEC models. Moreover, decreasing the electronic energy loss leads to a drastic reduction of the recrystallization rate. A comprehensive quantitative analysis of all the experimental results shows that the SHI induced high recrystallization rate can only be explained by a mechanism based on the melting of the amorphous zones through a thermal spike process followed by an epitaxial recrystallization initiated from the neighboring crystalline regions if the size of the latter exceeds a certain critical value. This quantitative analysis also reveals that recent molecular dynamics calculations supposed to reproduce this phenomenon are wrong since they overestimated the recrystallization rate by a factor ∼40.

  9. Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Taioli, Simone [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Physics, University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (Italy); Department of Chemistry, University of Bologna, Bologna (Italy); Garberoglio, Giovanni [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Simonucci, Stefano [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (Italy); Department of Physics, University of Camerino, Camerino (Italy); Beccara, Silvio a [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Physics, University of Trento, Trento (Italy); Aversa, Lucrezia [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento (Italy); Nardi, Marco [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento (Italy); Institut fuer Physik, Humboldt-Universitaet zu Berlin, Berlin (Germany); Verucchi, Roberto [Institute of Materials for Electronics and Magnetism, FBK-CNR, Trento (Italy); Iannotta, Salvatore [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Parma (Italy); Dapor, Maurizio [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Materials Engineering and Industrial Technologies, University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Padova (Italy); and others

    2013-01-28

    In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical perturbations and, for sufficient velocity, disruption of molecular bonds, and cage breaking with formation of nanostructures with different stoichiometric character. We show that in these out-of-equilibrium conditions, it is necessary to go beyond the standard implementations of density functional theory, as ab initio methods based on the Born-Oppenheimer approximation fail to capture the excited-state dynamics. In particular, we analyse the Si-C{sub 60} collision within the non-adiabatic nuclear dynamics framework, where stochastic hops occur between adiabatic surfaces calculated with time-dependent density functional theory. This theoretical description of the C{sub 60} impact on the Si surface is in good agreement with our experimental findings.

  10. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    2014-01-01

    Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding...... short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account...

  11. Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

    International Nuclear Information System (INIS)

    Meziere, Jerome; Pons, Michel; Cioccio, Lea Di; Blanquet, Elisabeth; Ferret, Pierre; Dedulle, Jean-Marc; Baillet, Francis; Pernot, Etienne; Anikin, Michail; Madar, Roland; Billon, Thierry

    2004-01-01

    High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show that this modelling approach could provide information on fabrication and characterization for the improvement of the knowledge of the growth history. Recent results of our integrated research programme on SiC, taking into account the fabrication, process modelling and characterization, will be presented

  12. Tunneling Spectroscopy Studies of Epitaxial Graphene on Silicon Carbide(0001) and Its Interfaces

    Science.gov (United States)

    Sandin, Andreas Axel Tomas

    A two dimensional network of sp2 bonded carbon atoms is defined as graphene. This novel material possesses remarkable electronic properties due to its unique band structure at the vicinity of the Fermi energy. The toughest challenge to bring use of graphene electronic properties in device geometries is that graphene is exceptionally sensitive to its electrical environment for integration into macroscopic system of electrical contacts and substrates. One of the most promising substrates for graphene is the polar surfaces of SiC for the reason it can be grown epitaxially by sublimating Si from the top-most SiC atomic layers. In this work, the interfaces of graphene grown on the Si-terminated polar surface SiC(0001) is studied in UHV using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), low energy electron diffraction (LEED) and auger electron Spectroscopy (AES). STM is used image the graphene surface and interfaces with the capability of atomic resolution. LEED is used to study surface atomic reciprocal ordering and AES is used to determine surface atomic composition during the graphene formation. Interfacial layer (Buffer layer), Single layer graphene and bilayer graphene are identified electronically by means of probing the first member of the image potential derived state. This state is found by dZ/dV spectroscopy in the high energy unoccupied states and is exceptionally sensitive to electrostatic changes to the surface which is detected by energy shifts of image potential states (IPS). This sensitivity is utilized to probe the graphene screening of external electric fields by varying the electric field in the tunneling junction and addresses the fact that charged impurity scattering is likely to be crucial for epitaxial graphene on SiC(0001) when it comes to transport parameters. Shifts of IPS energy position has also been used verify work function changes for identification of several Sodium Intercalation structures of epitaxial

  13. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  14. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  15. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  16. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  17. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  18. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  19. Muonium states in silicon carbide

    International Nuclear Information System (INIS)

    Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

    1986-01-01

    Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

  20. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  1. Graphene ribbon growth on structured silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Stoehr, Alexander; Link, Stefan; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover (Germany); Niu, Yuran [MAX IV Laboratory, Lund University (Sweden); present address: School of Physics and Astronomy, Cardiff University (United Kingdom); Zakharov, Alexei A. [MAX IV Laboratory, Lund University (Sweden); Chen, Chaoyu; Avila, Jose; Asensio, Maria C. [Synchrotron SOLEIL and Universite Paris-Saclay, Gif sur Yvette (France)

    2017-11-15

    Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES). (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  3. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  4. Method of fabricating porous silicon carbide (SiC)

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  5. Joining of porous silicon carbide bodies

    Science.gov (United States)

    Bates, Carl H.; Couhig, John T.; Pelletier, Paul J.

    1990-05-01

    A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

  6. An improved method of preparing silicon carbide

    International Nuclear Information System (INIS)

    Baney, R.H.

    1979-01-01

    A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

  7. Silicon carbide microsystems for harsh environments

    CERN Document Server

    Wijesundara, Muthu B J

    2011-01-01

    Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

  8. Irradiation and annealing of p-type silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  9. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  10. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  11. Silicon Carbide Power Devices and Integrated Circuits

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  12. Low temperature CVD deposition of silicon carbide

    International Nuclear Information System (INIS)

    Dariel, M.; Yeheskel, J.; Agam, S.; Edelstein, D.; Lebovits, O.; Ron, Y.

    1991-04-01

    The coating of graphite on silicon carbide from the gaseous phase in a hot-well, open flow reactor at 1150degC is described. This study constitutes the first part of an investigation of the process for the coating of nuclear fuel by chemical vapor deposition (CVD)

  13. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

  14. Visible light emission from porous silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang

    2017-01-01

    Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...

  15. An improved method for preparing silicon carbide

    International Nuclear Information System (INIS)

    Baney, R.H.

    1980-01-01

    A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 1600 0 C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH 3 ) 2 Si units and from 40 to 100 mole percent of CH 3 Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)

  16. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  17. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  18. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  19. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  20. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  1. Silicon Carbide Corrugated Mirrors for Space Telescopes, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

  2. Position-controlled epitaxial III-V nanowires on silicon

    NARCIS (Netherlands)

    Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

  3. All-solid-state supercapacitors on silicon using graphene from silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

    2016-05-02

    Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

  4. All-solid-state supercapacitors on silicon using graphene from silicon carbide

    International Nuclear Information System (INIS)

    Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

    2016-01-01

    Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

  5. Nondestructive neutron activation analysis of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Vandergraaf, T. T.; Wikjord, A. G.

    1973-10-15

    Instrumentel neutron activation analysis was used to determine trace constituents in silicon carbide. Four commercial powders of different origin, an NBS reference material, and a single crystal were characterized. A total of 36 activation species were identified nondestructively by high resolution gamma spectrometry; quantitative results are given for 12 of the more predominant elements. The limitations of the method for certain elements are discussed. Consideration is given to the depression of the neutron flux by impurities with large neutron absorption cross sections. Radiation fields from the various specimens were estimated assuming all radionuclides have reached their saturation activities. (auth)

  6. Crack propagation and fracture in silicon carbide

    International Nuclear Information System (INIS)

    Evans, A.G.; Lange, F.F.

    1975-01-01

    Fracture mechanics and strength studies performed on two silicon carbides - a hot-pressed material (with alumina) and a sintered material (with boron) - have shown that both materials exhibit slow crack growth at room temperature in water, but only the hot-pressed material exhibits significant high temperature slow crack growth (1000 to 1400 0 C). A good correlation of the observed fracture behaviour with the crack growth predicted from the fracture mechanics parameters shows that effective failure predictions for this material can be achieved using macro-fracture mechanics data. (author)

  7. Influence of nanometric silicon carbide on phenolic resin composites ...

    Indian Academy of Sciences (India)

    Abstract. This paper presents a preliminary study on obtaining and characterization of phenolic resin-based com- posites modified with nanometric silicon carbide. The nanocomposites were prepared by incorporating nanometric silicon carbide (nSiC) into phenolic resin at 0.5, 1 and 2 wt% contents using ultrasonication to ...

  8. Development of silicon carbide composites for fusion

    International Nuclear Information System (INIS)

    Snead, L.L.

    1993-01-01

    The use of silicon carbide composites for structural materials is of growing interest in the fusion community. However, radiation effects in these materials are virtually unexplored, and the general state of ceramic matrix composites for nonnuclear applications is still in its infancy. Research into the radiation response of the most popular silicon carbide composite, namely, the chemically vapor-deposited (CVD) SiC-carbon-Nicalon fiber system is discussed. Three areas of interest are the stability of the fiber and matrix materials, the stability of the fiber-matrix interface, and the true activation of these open-quotes reduced activityclose quotes materials. Two methods are presented that quantitatively measure the effect of radiation on fiber and matrix elastic modulus as well as the fiber-matrix interfacial strength. The results of these studies show that the factor limiting the radiation performance of the CVD SiC-carbon-Nicalon system is degradation of the Nicalon fiber, which leads to a weakened carbon interface. The activity of these composites is significantly higher than expected and is dominated by impurity isotopes. 52 refs., 12 figs., 3 tabs

  9. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  10. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  11. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  12. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  13. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

  14. Method of producing silicon carbide articles

    International Nuclear Information System (INIS)

    Milewski, J.V.

    1985-01-01

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity

  15. Stored energy in irradiated silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Burchell, T.D. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

  16. Neutron irradiation induced amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Hay, J.C.

    1998-01-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

  17. Single Photon Sources in Silicon Carbide

    International Nuclear Information System (INIS)

    Brett Johnson

    2014-01-01

    Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

  18. Visible light emission from porous silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang

    2017-01-01

    Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...... lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured...... by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications....

  19. White light emission from engineered silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan

    Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

  20. Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix

    International Nuclear Information System (INIS)

    Baney, Ronald

    2008-01-01

    The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process

  1. Silver diffusion through silicon carbide in microencapsulated nuclear fuels TRISO

    International Nuclear Information System (INIS)

    Cancino T, F.; Lopez H, E.

    2013-10-01

    The silver diffusion through silicon carbide is a challenge that has persisted in the development of microencapsulated fuels TRISO (Tri structural Isotropic) for more than four decades. The silver is known as a strong emitter of gamma radiation, for what is able to diffuse through the ceramic coatings of pyrolytic coal and silicon carbide and to be deposited in the heat exchangers. In this work we carry out a recount about the art state in the topic of the diffusion of Ag through silicon carbide in microencapsulated fuels and we propose the role that the complexities in the grain limit can have this problem. (Author)

  2. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  3. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Science.gov (United States)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  4. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  5. Lattice location of impurities in silicon Carbide

    CERN Document Server

    AUTHOR|(CDS)2085259; Correia Martins, João Guilherme

    The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them difficult contaminants to avoid. Once in SiC they easily form deep levels, either when in the isolated form or when forming complexes with other defects. On the other hand, using intentional TM doping, it is possible to change the electrical, optical and magnetic properties of SiC. TMs such as chromium, manganese or iron have been considered as possible candidates for magnetic dopants in SiC, if located on silicon lattice sites. All these issues can be explored by investigating the lattice site of implanted TMs. This thesis addresses the lattice location and thermal stability of the implanted TM radioactive probes 56Mn, 59Fe, 65Ni and 111Ag in both cubic 3C- and hexagonal 6H SiC polytypes by means of emission cha...

  6. Synthesis of carbon fibre-reinforced, silicon carbide composites by ...

    Indian Academy of Sciences (India)

    carbon fibre (Cf) reinforced, silicon carbide matrix composites which are ... eral applications, such as automotive brakes, high-efficiency engine systems, ... The PIP method is based on the use of organo metallic pre-ceramic precursors.

  7. Single-Event Effects in Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  8. Growth and intercalation of graphene on silicon carbide studied by low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speck, Florian; Ostler, Markus; Wanke, Martina; Seyller, Thomas [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Technische Universitaet Chemnitz, Institut fuer Physik (Germany); Besendoerfer, Sven [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Krone, Julia [Technische Universitaet Chemnitz, Institut fuer Physik (Germany)

    2017-11-15

    Based on its electronic, structural, chemical, and mechanical properties, many potential applications have been proposed for graphene. In order to realize these visions, graphene has to be synthesized, grown, or exfoliated with properties that are determined by the targeted application. Growth of so-called epitaxial graphene on silicon carbide by sublimation of silicon in an argon atmosphere is one particular method that could potentially lead to electronic applications. In this contribution we summarize our recent work on different aspects of epitaxial graphene growth and interface manipulation by intercalation, which was performed by a combination of low-energy electron microscopy, low-energy electron diffraction, atomic force microscopy and photoelectron spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  10. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  11. Silicon carbide and its use as a radiation detector material

    International Nuclear Information System (INIS)

    Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

    2008-01-01

    We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

  12. Multifunctional epitaxial systems on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968 (United States); Prater, John Thomas [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-09-15

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin

  13. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  14. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  15. Optical characterisation of cubic silicon carbide

    International Nuclear Information System (INIS)

    Jackson, S.M.

    1998-09-01

    The varied properties of Silicon Carbide (SiC) are helping to launch the material into many new applications, particularly in the field of novel semiconductor devices. In this work, the cubic form of SiC is of interest as a basis for developing integrated optical components. Here, the formation of a suitable SiO 2 buried cladding layer has been achieved by high dose oxygen ion implantation. This layer is necessary for the optical confinement of propagating light, and hence optical waveguide fabrication. Results have shown that optical propagation losses of the order of 20 dB/cm are obtainable. Much of this loss can be attributed to mode leakage and volume scattering. Mode leakage is a function of the effective oxide thickness, and volume scattering related to the surface layer damage. These parameters have been shown to be controllable and so suggests that further reduction in the waveguide loss is feasible. Analysis of the layer growth mechanism by RBS, XTEM and XPS proves that SiO 2 is formed, and that the extent, of formation depends on implant dose and temperature. The excess carbon generated is believed to exit the oxide layer by a number of varying mechanisms. The result of this appears to be a number of stable Si-C-O intermediaries that, form regions to either depth extreme of the SiO 2 layer. Early furnace tests suggest a need to anneal at, temperatures approaching the melting point of the silicon substrate, and that the quality of the virgin material is crucial in controlling the resulting oxide growth. (author)

  16. Precision Surface Grinding of Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Mohamed Konneh

    2016-12-01

    Full Text Available Silicon carbide (SiC is well known for its excellent material properties, high durability, high wear resistance, light weight and extreme hardness. Among the engineering applications of this material, it is an excellent candidate for optic mirrors used in an Airbone Laser (ABL device. However, the low fracture toughness and extreme brittleness characteristics of SiC are predominant factors for its poor machinability. This paper presents surface grinding of SiC using diamond cup wheels to assess the performance of diamond grits with respect to the roughness produced on the machined surfaces and also the morphology of the ground work-piece. Resin bonded diamond cup wheels of grit sizes 46 µm, 76 µm and 107 µm; depth of cut of 10 µm, 20 µm and 30 µm; and feed rate of 2 mm/min, 12 mm/min and 22 mm/min were used during this machining investigation. It has been observed that the 76 grit performs better in terms of low surface roughness value and morphology.

  17. The etching behaviour of silicon carbide compacts

    International Nuclear Information System (INIS)

    Jepps, N.W.; Page, T.F.

    1981-01-01

    A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

  18. Creating and Controlling Single Spins in Silicon Carbide

    Science.gov (United States)

    Christle, David

    Silicon carbide (SiC) is a well-established commercial semiconductor used in high-power electronics, optoelectronics, and nanomechanical devices, and has recently shown promise for semiconductor-based implementations of quantum information technologies. In particular, a set of divacancy-related point defects have improved coherence properties relative to the prominent nitrogen-vacancy center in diamond, are addressable at near-telecom wavelengths, and reside in a material for which there already exist advanced growth, doping, and microfabrication capabilities. These properties suggest divacancies in SiC have compelling advantages for photonics and micromechanical applications, yet their relatively recent discovery means crucial aspects of their fundamental physics for these applications are not well understood. I will review our progress on manipulating spin defects in SiC, and discuss efforts towards isolating and controlling them at the single defect limit. In particular, our most recent experimental results demonstrate isolation and control of long-lived (T2 = 0 . 9 ms) divacancies in a form of SiC that can be grown epitaxially on silicon. By studying the time-resolved photoluminescence of a single divacancy, we reveal its fundamental orbital structure and characterize in detail the dynamics of its special optical cycle. Finally, we probe individual divacancies using resonant laser techniques and reveal an efficient spin-photon interface with figures of merit comparable to those reported for NV centers in diamond. These results suggest a pathway towards photon-mediated entanglement of SiC defect spins over long distances. This work was supported by NSF, AFOSR, the Argonne CNM, the Knut & Alice Wallenberg Foundation, the Linköping Linnaeus Initiative, the Swedish Government Strategic Research Area, and the Ministry of Education, Science, Sports and Culture of Japan.

  19. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    International Nuclear Information System (INIS)

    Cockeram, B.V.

    1999-01-01

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

  20. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  1. Epitaxial III-V nanowires on silicon for vertical devices

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

  2. Sintering of nano crystalline α silicon carbide by doping with boron ...

    Indian Academy of Sciences (India)

    Unknown

    tions, they concluded that either reaction sintering or liquid phase .... α-6H silicon carbide single crystal by three different laboratories ... silicon carbide particles by the overall reaction .... layer displacement is likely to occur in such a manner as.

  3. Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

    Science.gov (United States)

    Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

    2018-03-01

    Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

  4. Enhanced optical performance of electrochemically etched porous silicon carbide

    International Nuclear Information System (INIS)

    Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

    2013-01-01

    Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

  5. Effect of hydrogen on the microstructure of silicon carbide

    International Nuclear Information System (INIS)

    Fischman, G.S.

    1985-01-01

    The effect of hydrogenation on the microstructure of a pressureless sintered silicon carbide was studied. Samples which were annealed in a 40:60 mole % H 2 :Ar atmosphere at 1400 0 C for 50 hours were microstructurally compared with unannealed samples and samples that had been annealed in a similar manner but using an argon atmosphere. The results were also compared with microstructural results obtained from in situ studies using both hydrogen and argon atmospheres. These results were compared with a thermodynamic model which was constructed using a free energy minimization technique. The observed effects of hydrogenation were surface decarburization and amorphization throughout the silicon carbide material. Other observations include the thermally induced growth of microcrystalline silicon and accelerated amorphization around the silicon microcrystals in samples used in hydrogen in situ studies. An analysis of the microstructure of the reference material was also performed

  6. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  7. Ultrafast nonlinear response of silicon carbide to intense THz fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Kaltenecker, Korbinian J.

    2017-01-01

    We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes...

  8. Influence of nanometric silicon carbide on phenolic resin composites

    Indian Academy of Sciences (India)

    The results highlight the positive effect of the nanometric silicon carbide addition in phenolic resin on mechanical, thermo-mechanical and tribological performance, improving their strength, stiffness and abrasive properties. The best results were obtained for 1 wt% nSiC, proving that this value is the optimum nanometric ...

  9. Sintering of nano crystalline o silicon carbide doping with

    Indian Academy of Sciences (India)

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by ...

  10. Synthesis and investigation of silicon carbide nanowires by HFCVD ...

    Indian Academy of Sciences (India)

    Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour .... −5. Torr by mechanical and dif- fusion vacuum pumps, then high purity H2 gas was fed into it. ... to standard PDF card numbers of 01-074-2307 and 01-.

  11. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  12. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    Energy Technology Data Exchange (ETDEWEB)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  13. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    International Nuclear Information System (INIS)

    Nagle, Dennis; Zhang, Dajie

    2009-01-01

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm -3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  14. Investigation of magnetism in aluminum-doped silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Chegel, Raad

    2013-11-01

    The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

  15. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  16. Sintering of nano crystalline α silicon carbide by doping with boron ...

    Indian Academy of Sciences (India)

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together ...

  17. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  18. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  19. Revised activation estimates for silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Cheng, E.T.; Mann, F.M.

    1996-10-01

    Recent progress in nuclear data development for fusion energy systems includes a reevaluation of neutron activation cross sections for silicon and aluminum. Activation calculations using the newly compiled Fusion Evaluated Nuclear Data Library result in calculated levels of {sup 26}Al in irradiated silicon that are about an order of magnitude lower than the earlier calculated values. Thus, according to the latest internationally accepted nuclear data, SiC is much more attractive as a low activation material, even in first wall applications.

  20. Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

    International Nuclear Information System (INIS)

    Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

    1984-01-01

    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

  1. Novel fabrication of silicon carbide based ceramics for nuclear applications

    Science.gov (United States)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  2. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  3. Linear electro-optic effect in cubic silicon carbide

    Science.gov (United States)

    Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping; Spencer, Michael G.

    1991-01-01

    The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

  4. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0

  5. Oxidation of mullite-zirconia-alumina-silicon carbide composites

    International Nuclear Information System (INIS)

    Baudin, C.; Moya, J.S.

    1990-01-01

    This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization

  6. Progress in Studies on Carbon and Silicon Carbide Nanocomposite Materials

    International Nuclear Information System (INIS)

    Xiao, P.; Chen, J.; Xian-feng, X.

    2010-01-01

    Silicon carbide nanofiber and carbon nanotubes are introduced. The structure and application of nanotubers (nanofibers) in carbon/carbon composites are emphatically presented. Due to the unique structure of nanotubers (nanofibers), they can modify the microstructure of pyrocarbon and induce the deposition of pyrocarbon with high text in carbon/carbon composites. So the carbon/carbon composites modified by CNT/CNF have more excellent properties.

  7. High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

    International Nuclear Information System (INIS)

    McNallan, M.

    1993-01-01

    Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

  8. Emission of blue light from hydrogenated amorphous silicon carbide

    Science.gov (United States)

    Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

    1994-04-01

    THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

  9. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    Science.gov (United States)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  10. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    International Nuclear Information System (INIS)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

    2014-01-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

  11. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  12. Silicon carbide MOSFET integrated circuit technology

    Energy Technology Data Exchange (ETDEWEB)

    Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Krishnamurthy, V.; Hennessy, W.; Michon, G. [General Electric Co., Schenectady, NY (United States). Corporate Research and Development Center

    1997-07-16

    The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the World`s first SiC analog IC - a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included characterization of the SiC/SiO{sub 2} interface using thermally grown oxides: high temperature (350 C) reliability studies of thermally grown oxides: ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes: epitaxial layer characterization: N channel inversion and depletion mode MOSFETs; device isolation methods and finally integrated circuit design, fabrication and testing of the World`s first monolithic SiC operational amplifier IC. These studies defined a SiC n-channel depletion mode MOSFET IC technology and outlined tasks required to improve all types of SiC devices. For instance, high temperature circuit drift instabilities at 350 C were discovered and characterized. This type of instability needs to be understood and resolved because it affects the high temperature reliability of other types of SiC devices. Improvements in SiC wafer surface quality and the use of deposited oxides instead of thermally grown SiO{sub 2} gate dielectrics will probably be required for enhanced reliability. The slow reverse recovery time exhibited by n{sup +}-p diodes formed by N ion implantation is a problem that needs to be resolved for all types of planar bipolar devices. The reproducibility of acceptor implants needs to be improved before CMOS ICs and many types of power device structures will be manufacturable. (orig.) 51 refs.

  13. Production of technical silicon and silicon carbide from rice-husk

    Directory of Open Access Journals (Sweden)

    A. Z. Issagulov

    2014-10-01

    Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

  14. Silicon Carbide Emitter Turn-Off Thyristor

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2008-01-01

    Full Text Available A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 A/cm2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 W/cm2 conduction and the 100 W/cm2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV and higher frequency (10 kHz are needed.

  15. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Tanaka, Satoru; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-09-15

    Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

  16. Thermogravimetric analysis of silicon carbide-silicon nitride fibers at ambient to 1000 C in air

    Science.gov (United States)

    Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis of silicon carbide-silicon nitride fibers was carried out at ambient to 1000 C in air. The weight loss over this temperature range was negligible. In addition, the oxidative stability at high temperature for a short period of time was determined. Fibers heated at 1000 C in air for fifteen minutes showed negligible weight loss (i.e., less than 1 percent).

  17. Detonation Synthesis of Alpha-Variant Silicon Carbide

    Science.gov (United States)

    Langenderfer, Martin; Johnson, Catherine; Fahrenholtz, William; Mochalin, Vadym

    2017-06-01

    A recent research study has been undertaken to develop facilities for conducting detonation synthesis of nanomaterials. This process involves a familiar technique that has been utilized for the industrial synthesis of nanodiamonds. Developments through this study have allowed for experimentation with the concept of modifying explosive compositions to induce synthesis of new nanomaterials. Initial experimentation has been conducted with the end goal being synthesis of alpha variant silicon carbide (α-SiC) in the nano-scale. The α-SiC that can be produced through detonation synthesis methods is critical to the ceramics industry because of a number of unique properties of the material. Conventional synthesis of α-SiC results in formation of crystals greater than 100 nm in diameter, outside nano-scale. It has been theorized that the high temperature and pressure of an explosive detonation can be used for the formation of α-SiC in the sub 100 nm range. This paper will discuss in detail the process development for detonation nanomaterial synthesis facilities, optimization of explosive charge parameters to maximize nanomaterial yield, and introduction of silicon to the detonation reaction environment to achieve first synthesis of nano-sized alpha variant silicon carbide.

  18. DC characteristics and parameters of silicon carbide high-voltage power BJTs

    International Nuclear Information System (INIS)

    Patrzyk, Joanna; Zarębski, Janusz; Bisewski, Damian

    2016-01-01

    The paper shows the static characteristics and operating parameters of the bipolar power transistors made of silicon carbide and for comparison their equivalents made of classical silicon technology. The characteristics and values of selected operating parameters with special emphasis on the effect of temperature and operating point of considered devices are discussed. Quantitative as well as qualitative differences between the characteristics of the transistor made of silicon and silicon carbide are indicated as well

  19. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  20. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    Science.gov (United States)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  1. Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

    Energy Technology Data Exchange (ETDEWEB)

    Webb, Matthew J., E-mail: matthew.webb@cantab.net; Lundstedt, Anna; Grennberg, Helena [Department of Chemistry—BMC, Uppsala University, Box 576, SE-751 23 Uppsala (Sweden); Polley, Craig; Niu, Yuran; Zakharov, Alexei A.; Balasubramanian, Thiagarajan [MAX IV Laboratory, Lund University, 22100 Lund (Sweden); Dirscherl, Kai [DFM—Danish Fundamental Metrology, Matematiktorvet 307, DK-2800 Lyngby (Denmark); Burwell, Gregory; Guy, Owen J. [College of Engineering, Faraday Tower, Singleton Park, Swansea University, Swansea SA2 8PP (United Kingdom); Palmgren, Pål [VG Scienta Scientific AB, Box 15120, Vallongatan 1, SE-750 15 Uppsala (Sweden); Yakimova, Rositsa [Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-08-25

    By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.

  2. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  3. DECODING THE MESSAGE FROM METEORITIC STARDUST SILICON CARBIDE GRAINS

    International Nuclear Information System (INIS)

    Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate

    2013-01-01

    Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analyzed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analyzed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carries the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modeling of dust condensation in stellar winds as a function of the metallicity.

  4. A comparative study of the constitutive models for silicon carbide

    Science.gov (United States)

    Ding, Jow-Lian; Dwivedi, Sunil; Gupta, Yogendra

    2001-06-01

    Most of the constitutive models for polycrystalline silicon carbide were developed and evaluated using data from either normal plate impact or Hopkinson bar experiments. At ISP, extensive efforts have been made to gain detailed insight into the shocked state of the silicon carbide (SiC) using innovative experimental methods, viz., lateral stress measurements, in-material unloading measurements, and combined compression shear experiments. The data obtained from these experiments provide some unique information for both developing and evaluating material models. In this study, these data for SiC were first used to evaluate some of the existing models to identify their strength and possible deficiencies. Motivated by both the results of this comparative study and the experimental observations, an improved phenomenological model was developed. The model incorporates pressure dependence of strength, rate sensitivity, damage evolution under both tension and compression, pressure confinement effect on damage evolution, stiffness degradation due to damage, and pressure dependence of stiffness. The model developments are able to capture most of the material features observed experimentally, but more work is needed to better match the experimental data quantitatively.

  5. Hydrogen adsorption in metal-decorated silicon carbide nanotubes

    Science.gov (United States)

    Singh, Ram Sevak; Solanki, Ankit

    2016-09-01

    Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

  6. Ion beam figuring of CVD silicon carbide mirrors

    Science.gov (United States)

    Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

    2017-11-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  7. Low-temperature synthesis of silicon carbide powder using shungite

    International Nuclear Information System (INIS)

    Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

    2017-01-01

    The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

  8. Stress envelope of silicon carbide composites at elevated temperatures

    International Nuclear Information System (INIS)

    Nozawa, Takashi; Kim, Sunghun; Ozawa, Kazumi; Tanigawa, Hiroyasu

    2014-01-01

    To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case

  9. Stress envelope of silicon carbide composites at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan); Kim, Sunghun [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Ozawa, Kazumi; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan)

    2014-10-15

    To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case.

  10. Low-temperature synthesis of silicon carbide powder using shungite

    Energy Technology Data Exchange (ETDEWEB)

    Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

    2017-07-01

    The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

  11. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  12. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Directory of Open Access Journals (Sweden)

    Gammon P.M.

    2017-01-01

    Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

  13. Ultrathin, epitaxial cerium dioxide on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Flege, Jan Ingo, E-mail: flege@ifp.uni-bremen.de; Kaemena, Björn; Höcker, Jan; Schmidt, Thomas; Falta, Jens [Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany); Bertram, Florian [Photon Science, Deutsches Elektronensynchrotron (DESY), Notkestraße 85, 22607 Hamburg (Germany); Wollschläger, Joachim [Department of Physics, University of Osnabrück, Barbarastraße 7, 49069 Osnabrück (Germany)

    2014-03-31

    It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce{sub 2}O{sub 3} film may very effectively be converted at room temperature to almost fully oxidized CeO{sub 2} by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.

  14. Charge collection properties of heavily irradiated epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

    2005-01-01

    Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

  15. Charge collection properties of heavily irradiated epitaxial silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

    2005-12-01

    Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

  16. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  17. Degradation of Silicon Carbide Reflective Surfaces in the LEO Environment

    Science.gov (United States)

    Mileti, Sandro; Coluzzi, Plinio; Marchetti, Mario

    2009-01-01

    Space mirrors in Low Earth Orbit (LEO) encounter a degradation problem caused by the impact of atomic oxygen (ATOX) in the space environment. This paper presents an experiment of the atomic oxygen impact degradation and UV synergic effects on ground simulation. The experiment was carried out in a dedicated ATOX simulation vacuum chamber. As target materials, a polished CVD Beta-silicon carbide (SiC) coating was investigated. The selection of silicon carbide is due to its high potential candidate as a mirror layer substrate material for its good reflectance at UV wavelengths and excellent thermal diffusivity. It has highly desirable mechanical and thermal properties and can achieve an excellent surface finish. The deposition of the coatings were on carbon-based material substrate; i.e., silicon impregnated carbon fiber composite (C/SiC). Mechanical and thermal properties of the coatings such as hardness and Coefficient of Thermal Expansion (CTE) were achieved. Several atomic oxygen impact angles were studied tilting the target samples respect to the flux direction. The various impact angles permitted to analyze the different erosion rates and typologies which the mirrors would encounter in LEO environment. The degradation was analyzed in various aspects. Macroscopic mass loss per unit area, surface roughness and morphology change were basically analyzed. The exposed surfaces of the materials were observed through a Scanning Electron Microscope (SEM). Secondly, optical diagnostic of the surfaces were performed in order to investigate their variation in optical properties as the evaluation of reflectance degradation. The presence of micro-cracks caused by shrinkage, grinding, polishing or thermal cycling and the porosity in the coatings, could have led to the undercutting phenomenon. Observation of uprising of undercutting was also conducted. Remarks are given regarding capabilities in short-term mission exposures to the LEO environment of this coating.

  18. TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

    International Nuclear Information System (INIS)

    Wong-Leung, J.; FitzGerald, J.D.

    2002-01-01

    Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

  19. X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

    1998-01-01

    The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

  20. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  1. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    Science.gov (United States)

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  2. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

  3. Decomposition of silicon carbide at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Daviau, Kierstin; Lee, Kanani K. M.

    2017-11-01

    We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

  4. Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.; Luchinin, V. V. [St. Petersburg State Electrotechnical University LETI (Russian Federation); Sledziewski, T. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany); Reshanov, S. A.; Schöner, A. [Ascatron AB (Sweden); Krieger, M. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany)

    2016-01-15

    The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

  5. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  6. TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

    Directory of Open Access Journals (Sweden)

    V. N. Kovalevsky

    2010-01-01

    Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

  7. Synthesis and characterisation of star polymer/silicon carbide nanocomposites

    International Nuclear Information System (INIS)

    Majewski, Peter; Choudhury, Namita Roy; Spori, Doris; Wohlfahrt, Ellen; Wohlschloegel, Markus

    2006-01-01

    A new type of composite material's preparation and property are reported in this paper. The composite was formed by solution blending a styrene ethylene butylenes (SEBS) star polymer with silicon carbide at various compositions. The composites were characterised using spectroscopic, microscopic and thermal techniques. Photo-acoustic Fourier transform infrared spectroscopy (PA-FT-IR) and transmission electron microscopy (TEM) results show that the SiC resides uniformly in the organic network. Thermogravimetric analysis (TGA) of the hybrid shows that the thermal stability of the composite is higher than that of the star polymer. The maximum decomposition temperature increases by 73 deg. C. Dynamic mechanical analysis (DMA) of the hybrid shows that the storage modulus of the star polymer increases after the composite formation, indicating the existence of thermodynamically stable SiC nanoparticles mostly in the micro-phase separated multiarm structure of the polymer

  8. Body of Knowledge for Silicon Carbide Power Electronics

    Science.gov (United States)

    Boomer, Kristen; Lauenstein, Jean-Marie; Hammoud, Ahmad

    2016-01-01

    Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

  9. Structures of sub-monolayered silicon carbide films

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to π*-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s → π* peak intensities, it is elucidated that the direction of the π*-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC x film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite

  10. Generation of damage cross section for silicon carbide

    International Nuclear Information System (INIS)

    Chang, Jonghwa; Lee, Wonjae

    2013-01-01

    There is practically no cross section library for current reactor physics codes which will be used for DPA calculation. Silicon carbide(SiC) is an important material used in gas-cooled reactor, advanced nuclear fuel, and fusion applications. There are more than 200 polytypes of SiC. However β-SiC, which is produced under 1700 .deg. C, is the polytype interesting for a nuclear application. This work has been carried out under the Korea-US I-NERI program supported by Korea Ministry of Education Science and Technology and US Department of Energy. Authors express gratitude to C. S. Gil of KAERI nuclear data center for NJOY processing

  11. High yield silicon carbide pre-ceramic polymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Polysilanes which are substituted with (CH 3 ) 3 SiO-groups are useful for the preparation in high yields of fine grained silicon carbide ceramic materials. They consist of 0 to 60 mole % (CH 3 ) 2 Si units and 100 to 40 mole % CH 3 Si units, all Si valences not satisfied by CH 3 groups or Si atoms being directed to groups (CH 3 ) 3 SiO-, which siloxane groups amount to 23 to 61 weight % of the polysilane. They are prepared by reaction of the corresponding chloro- or bromo-methyl polysilanes with at least the stoichiometric amounts of (CH 3 ) 3 SiOSi(CH 3 ) 3 and water in the presence of a strong acid. (author)

  12. Distribution and characterization of iron in implanted silicon carbide

    International Nuclear Information System (INIS)

    Bentley, J.; Romana, L.J.; Horton, L.L.; McHargue, C.J.

    1991-01-01

    Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal α-silicon carbide implanted at room temperature with 160 keV 57 Fe ions to fluences of 1, 3, and 6 x 10 16 ions/cm 2 . Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Moessbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600 degrees C with some redistribution of the implanted iron

  13. Application of silicon carbide to synchrotron-radiation mirrors

    International Nuclear Information System (INIS)

    Takacs, P.Z.; Hursman, T.L.; Williams, J.T.

    1983-09-01

    Damage to conventional mirror materials exposed to the harsh synchrotron radiation (SR) environment has prompted the SR user community to search for more suitable materials. Next-generation insertion devices, with their attendant flux increases, will make the problem of mirror design even more difficult. A parallel effort in searching for better materials has been underway within the laser community for several years. The technology for dealing with high thermal loads is highly developed among laser manufacturers. Performance requirements for laser heat exchangers are remarkably similar to SR mirror requirements. We report on the application of laser heat exchanger technology to the solution of typical SR mirror design problems. The superior performance of silicon carbide for laser applications is illustrated by various material trades studies, and its superior performance for SR applications is illustrated by means of model calculations

  14. Broadband antireflective silicon carbide surface produced by cost-effective method

    DEFF Research Database (Denmark)

    Argyraki, Aikaterini; Ou, Yiyu; Ou, Haiyan

    2013-01-01

    A cost-effective method for fabricating antireflective subwavelength structures on silicon carbide is demonstrated. The nanopatterning is performed in a 2-step process: aluminum deposition and reactive ion etching. The effect, of the deposited aluminum film thickness and the reactive ion etching...... conditions, on the average surface reflectance and nanostructure landscape have been investigated systematically. The average reflectance of silicon carbide surface is significantly suppressed from 25.4% to 0.05%, under the optimal experimental conditions, in the wavelength range of 390-784 nm. The presence...... of stochastic nanostructures also changes the wetting properties of silicon carbide surface from hydrophilic (47°) to hydrophobic (108°)....

  15. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    Energy Technology Data Exchange (ETDEWEB)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

  16. The suitability of silicon carbide for photocatalytic water oxidation

    Science.gov (United States)

    Aslam, M.; Qamar, M. T.; Ahmed, Ikram; Rehman, Ateeq Ur; Ali, Shahid; Ismail, I. M. I.; Hameed, Abdul

    2018-04-01

    Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is widely used in the manufacturing industry. Despite the semiconducting nature and morphology-tuned band gap, its efficacy as photocatalysts has not been thoroughly investigated. The current study reports the synthesis, characterization and the evaluation of the capability of silicon carbide for hydrogen generation from water splitting. The optical characterization of the as-synthesized powder exposed the formation of multi-wavelength absorbing entities in synthetic process. The structural analysis by XRD and the fine microstructure analysis by HRTEM revealed the cubic 3C-SiC (β-SiC) and hexagonal α-polymorphs (2H-SiC and 6H-SiC) as major and minor phases, respectively. The Mott-Schottky analysis verified the n-type nature of the material with the flat band potential of - 0.7 V. In the electrochemical evaluation, the sharp increase in the peak currents in various potential ranges, under illumination, revealed the plausible potential of the material for the oxidation of water and generation of hydrogen. The generation of hydrogen and oxygen, as a consequence of water splitting in the actual photocatalytic experiments, was observed and measured. A significant increase in the yield of hydrogen was noticed in the presence of methanol as h + scavenger, whereas a retarding effect was offered by the Fe3+ entities that served as e - scavengers. The combined effect of both methanol and Fe3+ ions in the photocatalytic process was also investigated. Besides hydrogen gas, the other evolved gasses such as methane and carbon monoxide were also measured to estimate the mechanism of the process.

  17. Nondestructive ultrasonic characterization of armor grade silicon carbide

    Science.gov (United States)

    Portune, Andrew Richard

    Ceramic materials have traditionally been chosen for armor applications for their superior mechanical properties and low densities. At high strain rates seen during ballistic events, the behavior of these materials relies upon the total volumetric flaw concentration more so than any single anomalous flaw. In this context flaws can be defined as any microstructural feature which detriments the performance of the material, potentially including secondary phases, pores, or unreacted sintering additives. Predicting the performance of armor grade ceramic materials depends on knowledge of the absolute and relative concentration and size distribution of bulk heterogeneities. Ultrasound was chosen as a nondestructive technique for characterizing the microstructure of dense silicon carbide ceramics. Acoustic waves interact elastically with grains and inclusions in large sample volumes, and were well suited to determine concentration and size distribution variations for solid inclusions. Methodology was developed for rapid acquisition and analysis of attenuation coefficient spectra. Measurements were conducted at individual points and over large sample areas using a novel technique entitled scanning acoustic spectroscopy. Loss spectra were split into absorption and scattering dominant frequency regimes to simplify analysis. The primary absorption mechanism in polycrystalline silicon carbide was identified as thermoelastic in nature. Correlations between microstructural conditions and parameters within the absorption equation were established through study of commercial and custom engineered SiC materials. Nonlinear least squares regression analysis was used to estimate the size distributions of boron carbide and carbon inclusions within commercial SiC materials. This technique was shown to additionally be capable of approximating grain size distributions in engineered SiC materials which did not contain solid inclusions. Comparisons to results from electron microscopy

  18. Characterisation of nuclear dispersion fuels. The non-destructive examination of silicon carbide by selenium immersion

    Energy Technology Data Exchange (ETDEWEB)

    Ambler, J.F.R.; Ferguson, I.F.

    1974-07-15

    The non-destructive microscopic examination of silicon-carbide-coated spheres containing uranium carbide, which involves immersing the coated spheres in selenium, is particularly suited for the examination of flaws in the coats but it is not possible to measure coating thicknesses by this method. Some coats are found to be opaque and this is related to their porosity. (auth)

  19. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

  20. Extended vapor-liquid-solid growth of silicon carbide nanowires.

    Science.gov (United States)

    Rajesh, John Anthuvan; Pandurangan, Arumugam

    2014-04-01

    We developed an alloy catalytic method to explain extended vapor-liquid-solid (VLS) growth of silicon carbide nanowires (SiC NWs) by a simple thermal evaporation of silicon and activated carbon mixture using lanthanum nickel (LaNi5) alloy as catalyst in a chemical vapor deposition process. The LaNi5 alloy binary phase diagram and the phase relationships in the La-Ni-Si ternary system were play a key role to determine the growth parameters in this VLS mechanism. Different reaction temperatures (1300, 1350 and 1400 degrees C) were applied to prove the established growth process by experimentally. Scanning electron microscopy and transmission electron microscopy studies show that the crystalline quality of the SiC NWs increases with the temperature at which they have been synthesized. La-Ni alloyed catalyst particles observed on the top of the SiC NWs confirms that the growth process follows this extended VLS mechanism. The X-ray diffraction and confocal Raman spectroscopy analyses demonstrate that the crystalline structure of the SiC NWs was zinc blende 3C-SiC. Optical property of the SiC NWs was investigated by photoluminescence technique at room temperature. Such a new alloy catalytic method may be extended to synthesis other one-dimensional nanostructures.

  1. Electronic properties of intrinsic and doped amorphous silicon carbide films

    International Nuclear Information System (INIS)

    Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

    2006-01-01

    Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

  2. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  3. The Affordable Pre-Finishing of Silicon Carbide for Optical Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Creare proposes to develop a novel, laser-assisted, pre-finishing process for chemical vapor deposition (CVD) coated silicon-carbide ceramics. Our innovation will...

  4. Low-Cost, Silicon Carbide Replication Technique for LWIR Mirror Fabrication, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG proposes an innovative optical manufacturing approach that will enable the low-cost fabrication of lightweighted, Long Wave Infrared (LWIR) Silicon Carbide (SiC)...

  5. The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

  6. The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

  7. Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

    Science.gov (United States)

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

    2017-07-07

    Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

  8. Formation of Porous Silicon Carbide and its Suitability as a Chemical and Temperature Detector

    National Research Council Canada - National Science Library

    Rittenhouse, Tilghman

    2004-01-01

    .... A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC the electroless process does not require electrical contact during etching...

  9. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  10. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  11. Dependence of silicon carbide coating properties on deposition parameters: preliminary report

    International Nuclear Information System (INIS)

    Lauf, R.J.; Braski, D.N.

    1980-05-01

    Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide, which acts as a pressure vessel and provides containment of metallic fission products. The silicon carbide (SiC) is deposited by the thermal decomposition of methyltrichlorosilane (CH 3 SiCl 3 or MTS) in an excess of hydrogen. The purpose of the current study is to determine how the deposition variables affect the structure and properties of the SiC layer

  12. Threshold irradiation dose for amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  13. A study on the development of silicon carbide materials for nuclear application

    International Nuclear Information System (INIS)

    Won, Dong Yeon; Kim, Chan Jung; Lee, Jae Choon; Kim, Joon Hyung; Lim, Kyung Soo; Kim, Ki Baik

    1987-12-01

    Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)

  14. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  15. Flexural strength of proof-tested and neutron-irradiated silicon carbide

    Science.gov (United States)

    Price, R. J.; Hopkins, G. R.

    1982-08-01

    Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

  16. Vaporization thermodynamics and enthalpy of formation of aluminum silicon carbide

    International Nuclear Information System (INIS)

    Behrens, R.G.; Rinehart, G.H.

    1984-01-01

    The vaporization thermodynamics of aluminum silicon carbide was investigated using Knudsen effusion mass spectrometry. Vaporization occurred incongruently to give Al(g), SiC(s), and graphite as reaction products. The vapor pressure of aluminum above (Al 4 SiC 4 + SiC + C) was measured using graphite effusion cells with orifice areas between 1.1 X 10 -2 and 3.9 X 10 -4 cm 2 . The vapor pressure of aluminum obtained between 1427 and 1784 K using an effusion cell with the smallest orifice area, 3.9 X 10 -4 cm 2 , is expressed as log p (Pa) = - (18567 + or - 86) (K/T) + (12.143 + or - 0.054) The third-law calculation of the enthalpy change for the reaction Al 4 SiC 4 (s) = 4Al(g) + SiC(hex) + 3C(s) using the present aluminum pressures gives ΔH 0 (298.15 K) = (1455 + or - 79) kJ /SUP ./ mol -1 . The corresponding second-law result is ΔH 0 (298.15 K) = (1456 + or - 47) kJ /SUP ./ mol -1 . The standard enthalpy of formation of Al 4 SiC 4 (s) from the elements calculated from the present vaporization enthalpy (third-law calculation) and the enthalpies of formation of Al(g) and hexagonal SiC is ΔH 0 /SUB f/ (298.15 K) = -(221 + or - 85) kJ /SUP ./ mol -1 . The standard enthalpy of formation of Al 4 SiC 4 (s) from its constituent carbides Al 4 C 3 (s) and SiC(c, hex) is calculated to be ΔH 0 (298.15 K) = (38 + or - 92) KJ /SUP ./ mol -1

  17. Use of epitaxial silicon diodes in photon dosimetry

    International Nuclear Information System (INIS)

    Pereira, Lilian Nunes

    2013-01-01

    In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

  18. Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion

    International Nuclear Information System (INIS)

    Rueschenschmidt, K.; Bracht, H.; Stolwijk, N.A.; Laube, M.; Pensl, G.; Brandes, G.R.

    2004-01-01

    Diffusion of 13 C and 30 Si in silicon carbide was performed with isotopically enriched 4H- 28 Si 12 C/ nat SiC heterostructures which were grown by chemical vapor phase epitaxy. After diffusion annealing at temperatures between 2000 deg. C and 2200 deg. C the 30 Si and 13 C profiles were measured by means of secondary ion mass spectrometry. We found that the Si and C diffusivity is of the same order of magnitude but several orders of magnitude lower than earlier data reported in the literature. Both Si and C tracer diffusion coefficients are in satisfactory agreement with the native point defect contribution to self-diffusion deduced from B diffusion in SiC. This reveals that the native defect which mediates B diffusion also controls self-diffusion. Assuming that B atoms within the extended tail region of B profiles are mainly dissolved on C sites, we propose that B diffuses via the kick-out mechanism involving C interstitials. Accordingly, C diffusion should proceed mainly via C interstitials. The mechanism of Si diffusion remains unsolved but Si may diffuse via both Si vacancies and interstitials, with the preference for either species depending on the doping level

  19. Thermodynamic analysis of thermal plasma process of composite zirconium carbide and silicon carbide production from zircon concentrates

    International Nuclear Information System (INIS)

    Kostic, Z.G.; Stefanovic, P.Lj.; Pavlovic; Pavlovic, Z.N.; Zivkovic, N.V.

    2000-01-01

    Improved zirconium ceramics and composites have been invented in an effort to obtain better resistance to ablation at high temperature. These ceramics are suitable for use as thermal protection materials on the exterior surfaces of spacecraft, and in laboratory and industrial environments that include flows of hot oxidizing gases. Results of thermodynamic consideration of the process for composite zirconium carbide and silicon carbide ultrafine powder production from ZrSiO 4 in argon thermal plasma and propane-butane gas as reactive quenching reagents are presented in the paper. (author)

  20. Epitaxial growth of CZT(S,Se) on silicon

    Science.gov (United States)

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  1. Atomistic simulation of rapid compression of fractured silicon carbide

    International Nuclear Information System (INIS)

    Romano, A.; Li, J.; Yip, S.

    2006-01-01

    Deformation mechanisms of a crack in silicon carbide under high-rate compression are investigated by molecular dynamics simulation. The penny-shaped crack is in tension throughout the simulation while a variable compression is applied in an in-plane direction. Two different mechanisms of crack-tip response are observed: (1) At low tension, a disordered band forms from the crack surface in the direction orthogonal to the compression, which grows as the compressional force is increased in a manner suggesting a stress-induced transition from an ordered to a disordered phase. Moreover the crack is observed to close. (2) At a tension sufficient to allow the crack to remain open, the compressional stress induces formation of disordered regions along the boundaries of the opened crack, which grow and merge into a band as the compression proceeds. This process is driven by bending of the initial crack, which transforms into a curved slit. This mechanism induces incorporation of fragments of perfect crystal into the disordered band. Similar mechanisms have been experimentally observed to occur in porous SiC under high-strain rate compression

  2. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  3. Fracture properties of hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Matsuda, Y.; King, S.W.; Bielefeld, J.; Xu, J.; Dauskardt, R.H.

    2012-01-01

    The cohesive fracture properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films in moist environments are reported. Films with stoichiometric compositions (C/Si ≈ 1) exhibited a decreasing cohesive fracture energy with decreasing film density similar to other silica-based hybrid organic–inorganic films. However, lower density a-SiC:H films with non-stoichiometric compositions (C/Si ≈ 5) exhibited much higher cohesive fracture energy than the films with higher density stoichiometric compositions. One of the non-stoichiometric films exhibited fracture energy (∼9.5 J m −2 ) greater than that of dense silica glasses. The increased fracture energy was due to crack-tip plasticity, as demonstrated by significant pileup formation during nanoindentation and a fracture energy dependence on film thickness. The a-SiC:H films also exhibited a very low sensitivity to moisture-assisted cracking compared with other silica-based hybrid films. A new atomistic fracture model is presented to describe the observed moisture-assisted cracking in terms of the limited Si-O-Si suboxide bond formation that occurs in the films.

  4. Silicon carbide composites as fusion power reactor structural materials

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L., E-mail: SneadLL@ORNL.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Nozawa, T. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, 2-4 Shirakata Shirane, Tokai, Ibaraki 319-1195 (Japan); Ferraris, M. [Politecnico di Torino-DISMIC c. Duca degli Abruzzi, 24I-10129 Torino (Italy); Katoh, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Shinavski, R. [Hypertherm HTC, 18411 Gothard St., Units A/B/C, Huntington Beach, CA 92648 (United States); Sawan, M. [University of Wisconsin, Madison 417 Engineering Research Building, 1500 Engineering Drive Madison, WI 53706-1687 (United States)

    2011-10-01

    Silicon carbide was first proposed as a low activation fusion reactor material in the mid 1970s. However, serious development of this material did not begin until the early 1990s, driven by the emergence of composite materials that provided enhanced toughness and an implied ability to use these typically brittle materials in engineering application. In the decades that followed, SiC composite system was successfully transformed from a poorly performing curiosity into a radiation stable material of sufficient maturity to be considered for near term nuclear and non-nuclear systems. In this paper the recent progress in the understanding and of basic phenomenon related to the use of SiC and SiC composite in fusion applications will be presented. This work includes both fundamental radiation effects in SiC and engineering issues such as joining and general materials properties. Additionally, this paper will briefly discuss the technological gaps remaining for the practical application of this material system in fusion power devices such as DEMO and beyond.

  5. Evaluation of CVD silicon carbide for synchrotron radiation mirrors

    International Nuclear Information System (INIS)

    Takacs, P.Z.

    1981-07-01

    Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods

  6. Evolution of Shock Waves in Silicon Carbide Rods

    International Nuclear Information System (INIS)

    Balagansky, I. A.; Balagansky, A. I.; Razorenov, S. V.; Utkin, A. V.

    2006-01-01

    Evolution of shock waves in self-bonded silicon carbide bars in the shape of 20 mm x 20 mm square prisms of varying lengths (20 mm, 40 mm, and 77.5 mm) is investigated. The density and porosity of the test specimens were 3.08 g/cm3 and 2%, respectively. Shock waves were generated by detonating a cylindrical shaped (d=40 mm and 1=40 mm) stabilized RDX high explosive charge of density 1.60 g/cm3. Embedded manganin gauges at various distances from the impact face were used to monitor the amplitude of shock pressure profiles. Propagation velocity of the stress pulse was observed to be equal to the elastic bar wave velocity of 11 km/s and was independent of the amplitude of the impact pulse. Strong fuzziness of the stress wave front is observed. This observation conforms to the theory on the instability of the shock formation in a finite size elastic body. This phenomenon of wave front fuzziness may be useful for desensitization of heterogeneous high explosives

  7. Preparation of silicon carbide nanowires via a rapid heating process

    International Nuclear Information System (INIS)

    Li Xintong; Chen Xiaohong; Song Huaihe

    2011-01-01

    Silicon carbide (SiC) nanowires were fabricated in a large quantity by a rapid heating carbothermal reduction of a novel resorcinol-formaldehyde (RF)/SiO 2 hybrid aerogel in this study. SiC nanowires were grown at 1500 deg. C for 2 h in an argon atmosphere without any catalyst via vapor-solid (V-S) process. The β-SiC nanowires were characterized by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), high-resolution transmission electron microscope (HRTEM) equipped with energy dispersive X-ray (EDX) facility, Fourier transformed infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA). The analysis results show that the aspect ratio of the SiC nanowires via the rapid heating process is much larger than that of the sample produced via gradual heating process. The SiC nanowires are single crystalline β-SiC phase with diameters of about 20-80 nm and lengths of about several tens of micrometers, growing along the [1 1 1] direction with a fringe spacing of 0.25 nm. The role of the interpenetrating network of RF/SiO 2 hybrid aerogel in the carbothermal reduction was discussed and the possible growth mechanism of the nanowires is analyzed.

  8. Thermodynamic calculations for chemical vapor deposition of silicon carbide

    International Nuclear Information System (INIS)

    Minato, Kazuo; Fukuda, Kousaku; Ikawa, Katsuichi

    1985-03-01

    The composition of vapor and condensed phases at equilibrium and CVD phase diagrams were calculated for the CH 3 SiCl 3 -H 2 -Ar system using a computer code SOLGASMIX-PV, which is based on the free energy minimization method. These calculations showed that β-SiC, β-SiC+C(s), β-SiC+Si(s), β-SiC+Si(l), Si(s), Si(l), or C(s) would be deposited depending on deposition parameters. In the CH 3 SiCl 3 -Ar system, condensed phase was found to be β-SiC+C(s) or C(s). Comparing the calculated CVD phase diagrams with the experimental results from the literature, β-SiC+C(s) and β-SiC+Si(s) were deposited in the experiments at the high temperature (more than 2000K) and low temperature (less than 1700K) parts of a resion, respectively, where only β-SiC would be deposited in the calculations. These are remakable results to consider the deposition mechanism of silicon carbide. (author)

  9. Silicon carbide optics for space and ground based astronomical telescopes

    Science.gov (United States)

    Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

    2012-09-01

    Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

  10. Ductile mode grinding of reaction-bonded silicon carbide mirrors.

    Science.gov (United States)

    Dong, Zhichao; Cheng, Haobo

    2017-09-10

    The demand for reaction-bonded silicon carbide (RB-SiC) mirrors has escalated recently with the rapid development of space optical remote sensors used in astronomy or Earth observation. However, RB-SiC is difficult to machine due to its high hardness. This study intends to perform ductile mode grinding to RB-SiC, which produces superior surface integrity and fewer subsurface damages, thus minimizing the workload of subsequent lapping and polishing. For this purpose, a modified theoretical model for grain depth of cut of grinding wheels is presented, which correlates various processing parameters and the material characteristics (i.e., elastic module) of a wheel's bonding matrix and workpiece. Ductile mode grinding can be achieved as the grain depth of cut of wheels decreases to be less than the critical cut depth of workpieces. The theoretical model gives a roadmap to optimize the grinding parameters for ductile mode grinding of RB-SiC and other ultra-hard brittle materials. Its feasibility was validated by experiments. With the optimized grinding parameters for RB-SiC, the ductile mode grinding produced highly specular surfaces (with roughness of ∼2.2-2.8  nm Ra), which means the material removal mechanism of RB-SiC is dominated by plastic deformation rather than brittle fracture. Contrast experiments were also conducted on fused silica, using the same grinding parameters; this produced only very rough surfaces, which further validated the feasibility of the proposed model.

  11. CLASSiC: Cherenkov light detection with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Adriani, Oscar [Physics Dept., University of Florence, Via Sansone 1, 50019, Sesto Fiorentino (Italy); INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Albergo, Sebastiano [Physics Dept., University of Catania, Via Santa Sofia 64, 95123 Catania (Italy); INFN dep. of Catania, Via Santa Sofia 64, 95123 Catania (Italy); D' Alessandro, Raffaello [Physics Dept., University of Florence, Via Sansone 1, 50019, Sesto Fiorentino (Italy); INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Lenzi, Piergiulio [INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Sciuto, Antonella [CNR-IMM, VIII Strada 5, Zona Industriale, Catania (Italy); INFN dep. of Catania, Via Santa Sofia 64, 95123 Catania (Italy); Starodubtsev, Oleksandr [INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Tricomi, Alessia [Physics Dept., University of Catania, Via Santa Sofia 64, 95123 Catania (Italy); INFN dep. of Catania, Via Santa Sofia 64, 95123 Catania (Italy)

    2017-02-11

    We present the CLASSiC R&D for the development of a silicon carbide (SiC) based avalanche photodiode for the detection of Cherenkov light. SiC is a wide-bandgap semiconductor material, which can be used to make photodetectors that are insensitive to visible light. A SiC based light detection device has a peak sensitivity in the deep UV, making it ideal for Cherenkov light. Moreover, the visible blindness allows such a device to disentangle Cherenkov light and scintillation light in all those materials that scintillate above 400 nm. Within CLASSiC, we aim at developing a device with single photon sensitivity, having in mind two main applications. One is the use of the SiC APD in a new generation ToF PET scanner concept, using the Cherenov light emitted by the electrons following 511 keV gamma ray absorption as a time-stamp. Cherenkov is intrinsically faster than scintillation and could provide an unprecedentedly precise time-stamp. The second application concerns the use of SiC APD in a dual readout crystal based hadronic calorimeter, where the Cherenkov component is used to measure the electromagnetic fraction on an event by event basis. We will report on our progress towards the realization of the SiC APD devices, the strategies that are being pursued toward the realization of these devices and the preliminary results on prototypes in terms of spectral response, quantum efficiency, noise figures and multiplication.

  12. Morphology of silicon carbide formed by chemical vapour deposition

    International Nuclear Information System (INIS)

    Pampuch, R.; Stobierski, L.

    1977-01-01

    Silicon carbide polycrystalline layers and particulate crystals were obtained in a modified van Arkel-de Boer apparatus on SiC-covered graphite and molybdenum susceptors. Gaseous SiCl 4 + CCl 4 + H 2 reactive mixtures with Si/C mole ratios varying between 0.9 and 1.4 and with Cl/Cl + H ratios varying between 2.10 -5 and 1.10 -3 were used. The morphology and structure of SiC products obtained at temperatures between 1400 and 1900 0 C and input gas flow rates between 5.10 -4 and 6.10 -2 moles per hour have been systematically investigated by scanning electronmicrographs, X-rays (using the Laue, Weissenberg, and rotation photographers), IR-spectra, and under the polarising microscope. The ranges of temperature and input gas flow rates in which the given habits and forms of the SiC products are formed have been assessed. The habits of the particulate crystals as function of temperature have been interpreted in terms of the existing theories of heterogeneous nucleation assuming layer growth of the crystals by two-dimensional nucleation. The influence of the composition of the gaseous mixtures upon the formation of the 2H polytype as well as the probable reasons for the common occurrence of stacking fault twins in the 3C polytype have been discussed. (author)

  13. Processes and applications of silicon carbide nanocomposite fibers

    International Nuclear Information System (INIS)

    Shin, D G; Cho, K Y; Riu, D H; Jin, E J

    2011-01-01

    Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al 2 O 3 . Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

  14. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  15. Observations of silicon carbide by high resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, D.J.; Jepps, N.W.; Page, T.F.

    1978-01-01

    High resolution transmission electron microscopy techniques, principally involving direct lattice imaging, have been used as part of a study of the crystallography and phase transformation mechanics of silicon carbide polytypes. In particular, the 3C (cubic) and 6H (hexagonal) polytypes have been examined together with partially transformed structural mixtures. Although direct observation of two-dimensional atomic structures was not possible at an operating voltage of 100 kV, considerable microstructural information has been obtained by careful choice of the experimental conditions. In particular, tilted beam observations of the 0.25 nm lattice fringes have been made in the 3C polytype for two different brace 111 brace plane arrays in order to study the dimensions and coherency of finely-twinned regions together with brace 0006 brace and brace 1 0 bar1 2 brace lattice images in the 6H polytype which allow the detailed stacking operations to be resolved. Lower resolution lattice images formed with axial illumination have also been used to study the nature of the 3C → 6H transformation and results are presented showing that the transformation interface may originate with fine twinning of the 3C structure followed by growth of the resultant 6H regions. Observations have been made of the detailed stepped structure of this interface together with the stacking fault distribution in the resultant 6H material. (author)

  16. Processes and applications of silicon carbide nanocomposite fibers

    Energy Technology Data Exchange (ETDEWEB)

    Shin, D G; Cho, K Y; Riu, D H [Nanomaterials Team, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Guemcheon-gu, Seoul 153-801 (Korea, Republic of); Jin, E J, E-mail: dhriu15@seoultech.ac.kr [Battelle-Korea Laborotary, Korea University, Anamdong, Seongbuk-gu, Seoul (Korea, Republic of)

    2011-10-29

    Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and {gamma}-Al{sub 2}O{sub 3}. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

  17. Processes and applications of silicon carbide nanocomposite fibers

    Science.gov (United States)

    Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

    2011-10-01

    Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

  18. Synthesis of silicon carbide by carbothermal reduction of silica

    International Nuclear Information System (INIS)

    Abel, Joao Luis

    2009-01-01

    The production of silicon carbide (SiC) in an industrial scale still by carbothermal reduction of silica. This study aims to identify, in a comparative way, among the common reducers like petroleum coke, carbon black, charcoal and graphite the carbothermal reduction of silica from the peat. It is shown, that the peat, also occurs in nature together with high purity silica sand deposits, where the proximity of raw materials and their quality are key elements that determine the type, purity and cost of production of SiC. Tests were running from samples produced in the electric resistance furnace with controlled atmosphere at temperatures of 1550 degree C, 1600 degree C and 1650 degree C, both the precursors and products of reaction of carbothermal reduction were characterized by applying techniques of X-ray diffraction, scanning electron microscopy (SEM) and Energy-Dispersive X-ray analysis Spectroscopy (EDS). The results showed the formation of SiC for all common reducers, as well as for peat, but it was not possible to realize clearly the difference between them, being necessary, specific tests. (author)

  19. The preparation method of solid boron solution in silicon carbide in the form of micro powder

    International Nuclear Information System (INIS)

    Pampuch, R.; Stobierski, L.; Lis, J.; Bialoskorski, J.; Ermer, E.

    1993-01-01

    The preparation method of solid boron solution in silicon carbide in the form of micro power has been worked out. The method consists in introducing mixture of boron, carbon and silicon and heating in the atmosphere of inert gas to the 1573 K

  20. Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

    Science.gov (United States)

    Neudeck, Philip G.

    1998-01-01

    The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

  1. Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

    International Nuclear Information System (INIS)

    Artamanov, V.V.; Valakh, M.Ya.; Klyui, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

    1998-01-01

    The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiO x precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered

  2. Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

    Science.gov (United States)

    Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

    2018-05-01

    We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

  3. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-08-01

    Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

  4. Test setup for long term reliability investigation of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

    2013-01-01

    Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

  5. Effects of silicon carbide on the phase developments in mullite-carbon ceramic composite

    Directory of Open Access Journals (Sweden)

    Fatai Olufemi ARAMIDE

    2017-12-01

    Full Text Available The effects of the addition of silicon carbide and sintering temperatures on the phases developed, in sintered ceramic composite produced from kaolin and graphite was investigated. The kaolin and graphite of known mineralogical composition were thoroughly blended with 4 and 8 vol % silicon carbide. From the homogeneous mixture of kaolin, graphite and silicon carbide, standard samples were prepared via uniaxial compaction. The test samples produced were subjected to firing (sintering at 1300°C, 1400°C and 1500°C. The sintered samples were characterized for the developed phases using x‐ray diffractometry analysis, microstructural morphology using ultra‐high resolution field emission scanning electron microscope (UHRFEGSEM. It was observed that microstructural morphology of the samples revealed the evolution of mullite, cristobalite and microcline. The kaolinite content of the raw kaolin undergoes transformation into mullite and excess silica, the mullite and the silica phases contents increased with increased sintering temperature. It is also generally observed that the graphite content progressively reduced linearly with increased sintering temperature. It is concluded that silicon carbide acts as anti-oxidant for the graphite, this anti-oxidant effect was more effective at 4 vol % silicon carbide.

  6. Advanced Silicon Carbide from Molecular Engineering and Actinide Fuels

    International Nuclear Information System (INIS)

    Meyer, D.J.M.; Garcia, J.; Guillaneux, D.; Wong-Chi-Man, M.; Moreau, J.J.E.

    2008-01-01

    In the frame of nuclear fuels studies for generation IV, carbides or oxycarbides assemblies are one of the engaged material for high temperature reactors. The design of the fuels is not yet defined but some structures are actually considered with SiC as matrix for the actinide fuel. In this work we have studied the synthesis of a multi-scale structure controlled SiC matrix using molecular silicon organometallic precursors. The aim of this work was to develop a way to obtain multi-scale SiC matrix material which could be engineered to fit in any fuel structure defined for generation IV fuels. The control of this multi-scale structure was done using several simulation methods specific of the low temperature solution synthesis of the precursor. In a first step, we have focused our effort on the synthesis of the SiC material. A first level of template was successfully done by the use of solid silica 500 nm balls. A second level of template was studied by the use of meso-porous silica, structured at a 50 nm level. At least, supra-molecular simulation in non aqueous media was considered with the difficulty to build a molecular assembly (inverse micelles). In a second step, we have functionalized the primary silane phase with actinide complexing agent in order to blend directly the actinide inside this primary phase in a controlled way. During these studies, a new one pot synthesis route to obtain the functionalized primary silane phase was developed. (authors)

  7. Quantum Control and Entanglement of Spins in Silicon Carbide

    Science.gov (United States)

    Klimov, Paul

    Over the past several decades silicon carbide (SiC) has matured into a versatile material platform for high-power electronics and optoelectronic and micromechanical devices. Recent advances have also established SiC as a promising host for quantum technologies based on the spin of intrinsic defects, with the potential of leveraging existing device fabrication protocols alongside solid-state quantum control. Among these defects are the divacancies and related color centers, which have ground-state electron-spin triplets with coherence times as long as one millisecond and built-in optical interfaces operating near the telecommunication wavelengths. This rapidly developing field has prompted research into the SiC material host to understand how defect-bound electron spins interact with their surrounding nuclear spin bath. Although nuclear spins are a major source of decoherence in color-center spin systems, they are also a valuable resource since they can have coherence times that are orders of magnitude longer than electron spins. In this talk I will discuss our recent efforts to interface defect-bound electron spins in SiC with the nuclear spins of naturally occurring 29Si and 13C isotopic defects. I will discuss how the hyperfine interaction can be used to strongly initialize them, to coherently control them, to read them out, and to produce genuine electron-nuclear ensemble entanglement, all at ambient conditions. These demonstrations motivate further research into spins in SiC for prospective quantum technologies. In collaboration with A. Falk, D. Christle, K. Miao, H. Seo, V. Ivady, A. Gali, G. Galli, and D. D. Awschalom. This research was supported by the AFOSR, the NSF DMR-1306300, and the NSF Materials Research Science and Engineering Center.

  8. Fabrication and Mechanical Properties of Silicon Carbide Micropillars

    International Nuclear Information System (INIS)

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun; Kim, Don Jin

    2011-01-01

    Silicon carbide (SiC) has outstanding thermal and mechanical properties under high temperature and high neutron irradiation. SiC and SiC/SiC composites have been proposed as a promising candidate material for structural components in fusion reactors. Characterization of the mechanical properties such as fracture strength is important in ensuring the reliability of these ceramic structures. This study demonstrates a micro-compression test of SiC micropillars which are fabricated by mask and dryetching technique. Our fabrication method involves lithographic pattering of spun and baked photoresist on chemically vapor-deposited (CVD) polycrystalline beta-SiC substrates, followed by lift-off process of electroplated metal into the prescribed photoresist template. This metal works as an etch cap for inductively coupled plasma (ICP) etching. Our fabrication method enables the production of more than a few hundred micropillars under an identical fabrication condition, which is a great benefit for the statistical analysis of the fracture properties of brittle ceramic materials. The diameters of fabricated SiC micropillars range from 6 down to 0.5 μm. The ratio of micropillar diameter to height is set to 1:3 ∼ 1:4. Uniaxial compression tests have been conducted using flat punch nanoindentation at room temperature. We observed the specimen size effect on the measured fracture stress of SiC micropillars. In this paper we present the results of the micro-compression tests of SiC micropillars with the diameters of 0.8 and 2.6 μm

  9. Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

    Science.gov (United States)

    Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

    2018-02-01

    Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

  10. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  11. Melting of Grey Cast Iron Based on Steel Scrap Using Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Stojczew A.

    2014-08-01

    Full Text Available The paper presents the issue of synthetic cast iron production in the electric induction furnace exclusively on the steel scrap base. Silicon carbide and synthetic graphite were used as carburizers. The carburizers were introduced with solid charge or added on the liquid metal surface. The chemical analysis of the produced cast iron, the carburization efficiency and microstructure features were presented in the paper. It was stated that ferrosilicon can be replaced by silicon carbide during the synthetic cast iron melting process. However, due to its chemical composition (30% C and 70% Si which causes significant silicon content in iron increase, the carbon deficit can be partly compensated by the carburizer introduction. Moreover it was shown that the best carbon and silicon assimilation rate is obtained where the silicon carbide is being introduced together with solid charge. When it is thrown onto liquid alloy surface the efficiency of the process is almost two times less and the melting process lasts dozen minutes long. The microstructure of the cast iron produced with the silicon carbide shows more bulky graphite flakes than inside the microstructure of cast iron produced on the pig iron base.

  12. Preparation And Characterization Of Silicon Carbide Foam By Using In-Situ Generated Polyurethane Foam

    Directory of Open Access Journals (Sweden)

    Shalini Saxena

    2015-08-01

    Full Text Available Abstract The open cell silicon carbide SiC foam was prepared using highly crosslinked hybrid organic- inorganic polymer resin matrix. As inorganic polymer polycarbosilane was taken and organic resin was taken as a mixture of epoxy resin and diisocyanates. The resultant highly crosslinked hybrid resin matrix on heating and subsequently on pyrolysis yielded open cell silicon carbide foam. The hybrid resin matrix was characterized by Fourier transform Infrared Spectroscopy FT-IR and thermal properties i.e. Thermogravimetric analysis TGA amp Differential Scanning Calorimetry DSC were also studied. The morphological studies of silicon carbide ceramic foam were carried out using X-ray Spectroscopy XRD amp Scanning Electron Microscopy SEM.

  13. GRANULATION TRIALS OF WASTE THE DUST SILICON CARBIDE FOR UTILIZATION IN METALLURGY

    Directory of Open Access Journals (Sweden)

    Gabriel Borowski

    2016-09-01

    Full Text Available The article presents the results of laboratory granulation tests of dust silicon carbide and the results of research on the selection of the binder and the properties of the granules obtained. The research material was a waste of the silicon carbide powder with a high fragmentation, mixed with a cement or an organic modified starch specimen. Six tests were performed in a disc granulator with 100 cm in diameter. In each series of trial specified: the type and share of the binder, the diameter of the granules, tenderness, type of structure and mechanical properties. Good granules of silicon carbide obtained with the addition of cement binder with 4% of the mass fraction and at least 24 hours of seasoning. The binder should be added twice by powdering, first in a stirred granulator, and again after manufacture. It was found that the resulting granules may be used as a replacement of ferrosilicon in the process of steelmaking.

  14. A re-examination of two-step lateral stress history in silicon carbide

    International Nuclear Information System (INIS)

    Dandekar, Dattatraya P.

    2004-01-01

    The observed two-step lateral stress history in silicon carbide, SiC-B under plane shock wave propagation [N. K. Bourne, J. Millett, and I. Pickup, J. Appl. Phys. 81, 6019 (1997)] is attributed to a delayed failure in SiC-B due to propagation of a slow moving front traveling behind the main shock wave. According to this attribution, the first lower magnitude, step corresponds to the lateral stress in intact shock compressed silicon carbide as a result of the fast moving plane shock wave. The second step of higher magnitude, observed after a few hundred nanoseconds, corresponds to the lateral stress in failed silicon carbide due to propagation of the slower moving front. The current analysis, takes into account additional relevant existing results dealing with shock response of SiC-B, and shows that the suggested explanation for the observed phenomenon remains in doubt

  15. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    Science.gov (United States)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  16. Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

    Science.gov (United States)

    Singh, M.; Leonhardt, T. A.

    1995-01-01

    Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

  17. Epitaxial graphene electronic structure and transport

    International Nuclear Information System (INIS)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

    2010-01-01

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  18. Low-temperature epitaxy of silicon by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, B. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany); Dogan, P. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)], E-mail: pinar.dogan@hmi.de; Sieber, I.; Fenske, F.; Gall, S. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)

    2007-07-16

    In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T{sub s} = 500-650 deg. C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T{sub s} and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.

  19. Observations on infiltration of silicon carbide compacts with an aluminium alloy

    Science.gov (United States)

    Asthana, R.; Rohatgi, P. K.

    1992-01-01

    The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

  20. High frequency three-phase PWM grid connected drive using silicon-carbide switches

    DEFF Research Database (Denmark)

    Kouchaki, Alireza; Pedersen, Jacob Lykke; Nymand, Morten

    2016-01-01

    This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared with the ......This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared...

  1. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  2. Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

    Science.gov (United States)

    Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

  3. Nucleation of Small Silicon Carbide Dust Clusters in AGB Stars

    Energy Technology Data Exchange (ETDEWEB)

    Gobrecht, David; Cristallo, Sergio; Piersanti, Luciano [Osservatorio Astronomico di Teramo, INAF, I-64100 Teramo (Italy); Bromley, Stefan T. [Departament de Cincia de Materials i Química Fisica and Institut de Química Terica i Computacional (IQTCUB),Universitat de Barcelona, E-08028 Barcelona (Spain)

    2017-05-10

    Silicon carbide (SiC) grains are a major dust component in carbon-rich asymptotic giant branch stars. However, the formation pathways of these grains are not fully understood. We calculate ground states and energetically low-lying structures of (SiC){sub n}, n = 1, 16 clusters by means of simulated annealing and Monte Carlo simulations of seed structures and subsequent quantum-mechanical calculations on the density functional level of theory. We derive the infrared (IR) spectra of these clusters and compare the IR signatures to observational and laboratory data. According to energetic considerations, we evaluate the viability of SiC cluster growth at several densities and temperatures, characterizing various locations and evolutionary states in circumstellar envelopes. We discover new, energetically low-lying structures for Si{sub 4}C{sub 4}, Si{sub 5}C{sub 5}, Si{sub 15}C{sub 15}, and Si{sub 16}C{sub 16} and new ground states for Si{sub 10}C{sub 10} and Si{sub 15}C{sub 15}. The clusters with carbon-segregated substructures tend to be more stable by 4–9 eV than their bulk-like isomers with alternating Si–C bonds. However, we find ground states with cage geometries resembling buckminsterfullerens (“bucky-like”) for Si{sub 12}C{sub 12} and Si{sub 16}C{sub 16} and low-lying stable cage structures for n ≥ 12. The latter findings thus indicate a regime of cluster sizes that differ from small clusters as well as from large-scale crystals. Thus—and owing to their stability and geometry—the latter clusters may mark a transition from a quantum-confined cluster regime to a crystalline, solid bulk-material. The calculated vibrational IR spectra of the ground-state SiC clusters show significant emission. They include the 10–13 μ m wavelength range and the 11.3 μm feature inferred from laboratory measurements and observations, respectively, although the overall intensities are rather low.

  4. Fabrication and Characterization of Silicon Carbide Epoxy Composites

    Science.gov (United States)

    Townsend, James

    Nanoscale fillers can significantly enhance the performance of composites by increasing the extent of filler-to-matrix interaction. Thus far, the embedding of nanomaterials into composites has been achieved, but the directional arrangement has proved to be a challenging task. Even with advances in in-situ and shear stress induced orientation, these methods are both difficult to control and unreliable. Therefore, the fabrication of nanomaterials with an ability to orient along a magnetic field is a promising pathway to create highly controllable composite systems with precisely designed characteristics. To this end, the goal of this dissertation is to develop magnetically active nanoscale whiskers and study the effect of the whiskers orientation in a polymer matrix on the nanocomposite's behavior. Namely, we report the surface modification of silicon carbide whiskers (SiCWs) with magnetic nanoparticles and fabrication of SiC/epoxy composite materials. The magnetic nanoparticles attachment to the SiCWs was accomplished using polyelectrolyte polymer-to-polymer complexation. The "grafting to" and adsorption techniques were used to attach the polyelectrolytes to the surface of the SiCWs and magnetic nanoparticles. The anchored polyelectrolytes were polyacrylic acid (PAA) and poly(2-vinylpyridine) (P2VP). Next, the SiC/epoxy composites incorporating randomly oriented and magnetically oriented whiskers were fabricated. The formation of the composite was studied to determine the influence of the whiskers' surface composition on the epoxy curing reaction. After curing, the composites' thermal and thermo-mechanical properties were studied. These properties were related to the dispersion and orientation of the fillers in the composite samples. The obtained results indicated that the thermal and thermo-mechanical properties could be improved by orienting magnetically-active SiCWs inside the matrix. Silanization, "grafting to", adsorption, and complexation were used to modify

  5. Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Naderi, N., E-mail: naderi.phd@gmail.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2013-03-05

    Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

  6. Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

    International Nuclear Information System (INIS)

    Naderi, N.; Hashim, M.R.

    2013-01-01

    Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

  7. Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

    Science.gov (United States)

    Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

    2011-10-01

    The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

  8. Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

    2011-01-01

    We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

  9. Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

    Science.gov (United States)

    Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

    1975-01-01

    Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

  10. All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

    Directory of Open Access Journals (Sweden)

    D. Simin

    2016-07-01

    Full Text Available We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-^{28}SiC and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100  nT/sqrt[Hz] within a volume of 3×10^{-7}mm^{3} at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3  mm^{3}, the projection noise limit is below 100  fT/sqrt[Hz].

  11. Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications

    International Nuclear Information System (INIS)

    Schnabel, Manuel

    2015-01-01

    Tandem solar cells consist of multiple individual solar cells stacked in order of increasing bandgap, with the cell with highest bandgap towards the incident light. This allows photons to be absorbed in the cell that will convert them to electricity with the greatest efficiency, and is the only solar cell concept to surpass the theoretical efficiency limit of a conventional solar cell so far. This work is concerned with the development of silicon nanocrystals (Si NCs) embedded in silicon carbide, which are expected to have a higher bandgap than bulk Si due to quantum confinement, for use in the top cell of a two-junction tandem cell. Charge carrier transport and recombination were investigated as a function of various parameters. Distortion of luminescence spectra by optical interference was highlighted and a robust model to describe transport of majority carriers was developed. Furthermore, a range of processing steps required to produce a Si NC-based tandem cell were studied, culminating in the preparation of the first Si NC-based tandem cells. The resulting cells exhibited open-circuit voltages of 900 mV, demonstrating tandem cell functionality.

  12. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    Science.gov (United States)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  13. Radiation damage in proton-irradiated epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Lange, Joern

    2009-07-01

    In this work radiation hardness of 75 μm, 100 μm and 150 μm thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10 14 cm -2 and 10 16 cm -2 was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10 15 cm -2 . The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10 15 cm -2 . During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with α-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

  14. Radiation damage in proton-irradiated epitaxial silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lange, Joern

    2009-07-15

    In this work radiation hardness of 75 {mu}m, 100 {mu}m and 150 {mu}m thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10{sup 14} cm{sup -2} and 10{sup 16} cm{sup -2} was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10{sup 15} cm{sup -2}. The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10{sup 15} cm{sup -2}. During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with {alpha}-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

  15. Vapor phase epitaxy of silicon on meso porous silicon for deposition on economical substrate and low cost photovoltaic application

    International Nuclear Information System (INIS)

    Quoizola, S.

    2003-01-01

    The silicon is more and more used in the industry. Meanwhile the production cost is a problem to solve to develop the photovoltaic cells production. This thesis presents a new technology based on the use of a meso-porous silicon upper layer,to grow the active silicon layer of 50 μm width. The photovoltaic cell is then realized, the device is removed and placed on a low cost substrate. The silicon substrate of beginning can be used again after cleaning. The first chapter presents the operating and the characteristics of the silicon photovoltaic cell. The second chapter is devoted to the growth technique, the vapor phase epitaxy, and the third chapter to the epitaxy layer. The chapter four deals with the porous silicon and the structure chosen in this study. The chapter five is devoted to the characterization of the epitaxy layer on porous silicon. The photovoltaic cells realized on these layers are presented in the last chapter. (A.L.B.)

  16. Covalently Attached Organic Monolayers onto Silicon Carbide from 1-Alkynes: Molecular Structure and Tribological Properties

    NARCIS (Netherlands)

    Pujari, S.P.; Scheres, L.M.W.; Weidner, T.; Baio, J.E.; Cohen Stuart, M.A.; Rijn, van C.J.M.; Zuilhof, H.

    2013-01-01

    In order to achieve improved tribological and wear properties at semiconductor interfaces, we have investigated the thermal grafting of both alkylated and fluorine-containing ((CxF2x+1)–(CH2)n-) 1-alkynes and 1-alkenes onto silicon carbide (SiC). The resulting monolayers display static water contact

  17. Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

    2008-01-01

    The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

  18. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

  19. Parameters optimization, microstructure and micro-hardness of silicon carbide laser deposited on titanium alloy

    CSIR Research Space (South Africa)

    Adebiyia, DI

    2016-06-01

    Full Text Available Silicon carbide (SiC), has excellent mechanical properties such as high hardness and good wear resistance, and would have been a suitable laser-coating material for titanium alloy to enhance the poor surface hardness of the alloy. However, SiC has...

  20. Abrasive wear behavior of heat-treated ABC-silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da; Ritchie, Robert O.; De Jonghe, Lutgard C.

    2002-06-17

    Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

  1. Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

    International Nuclear Information System (INIS)

    Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

    2006-01-01

    SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

  2. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  3. Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

    International Nuclear Information System (INIS)

    Miyoshi, K.; Buckley, D.H.

    1978-04-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide

  4. Silicon carbide production by Self-Propagating High Temperature (SHS) technique

    International Nuclear Information System (INIS)

    Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

    1997-01-01

    Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

  5. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  6. Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

    International Nuclear Information System (INIS)

    Huang Li; Xu Wen-Yan; Que Yan-De; Mao Jin-Hai; Meng Lei; Pan Li-Da; Li Geng; Wang Ye-Liang; Du Shi-Xuan; Gao Hong-Jun; Liu Yun-Qi

    2013-01-01

    Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. (topical review - low-dimensional nanostructures and devices)

  7. Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

    2007-07-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

  8. High yield silicon carbide from alkylated or arylated pre-ceramic polymer

    International Nuclear Information System (INIS)

    Baney, R.H.; Gaul, J.H.

    1982-01-01

    Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

  9. Doping of silicon carbide by ion implantation; Dopage du carbure de silicium par implantation ionique

    Energy Technology Data Exchange (ETDEWEB)

    Gimbert, J

    1999-03-04

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  10. A new metal electrocatalysts supported matrix: Palladium nanoparticles supported silicon carbide nanoparticles and its application for alcohol electrooxidation

    International Nuclear Information System (INIS)

    Dai Hong; Chen Yanling; Lin Yanyu; Xu Guifang; Yang Caiping; Tong Yuejin; Guo Longhua; Chen Guonan

    2012-01-01

    In this paper, we propose a facile approach for palladium nanoparticles load using silicon carbide nanoparticles as the new supported matrix and a familiar NaBH 4 as reducer. Detailed X-ray photoelectron spectrum (XPS) and transmission electron microscopy (TEM) analysis of the resultant products indicated that palladium nanoparticles are successfully immobilized onto the surface of the silicon carbide nanoparticles with uniform size distribution between 5 and 7 nm. The relative electrochemical characterization clearly demonstrated excellent electrocatalytic activity of this material toward alcohol in alkaline electrolytes. Investigation on the characteristics of the electrocatalytic activity of this material further indicated that the palladium nanoparticles supporting on SiC are very promising for direct alcohol fuel cells (DMFCs), biosensor and electronic devices. Moreover, it was proved that silicon carbide nanoparticles with outstanding properties as support for catalysis are of strong practical interest. And the silicon carbide could perform attractive role in adsorbents, electrodes, biomedical applications, etc.

  11. High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

  12. Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses

    International Nuclear Information System (INIS)

    Gemini, Laura; Hashida, Masaki; Shimizu, Masahiro; Miyasaka, Yasuhiro; Inoue, Shunsuke; Tokita, Shigeki; Sakabe, Shuji; Limpouch, Jiri; Mocek, Tomas

    2013-01-01

    Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material

  13. Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Leparoux, S. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)], E-mail: susanne.leparoux@empa.ch; Diot, C. [Consultant, allee de Mozart 10, F-92300 Chatillon (France); Dubach, A. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Vaucher, S. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)

    2007-10-15

    When a powder mixture of diamond and silicon is heated by microwaves, heteroepitaxial growth of SiC is observed on the (1 1 1) as well as on the (1 0 0) faces of the diamond. The SiC over-layer was characterized by X-ray diffraction and scanning electron microscopy. High-resolution scanning electron microscopy shows the presence of triangular silicon carbide on the (1 1 1) faces of diamond while prismatic crystals are found on the (1 0 0) faces. The crystal growth seems to be favored in the plane parallel to the face (1 1 1)

  14. Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

    International Nuclear Information System (INIS)

    Leparoux, S.; Diot, C.; Dubach, A.; Vaucher, S.

    2007-01-01

    When a powder mixture of diamond and silicon is heated by microwaves, heteroepitaxial growth of SiC is observed on the (1 1 1) as well as on the (1 0 0) faces of the diamond. The SiC over-layer was characterized by X-ray diffraction and scanning electron microscopy. High-resolution scanning electron microscopy shows the presence of triangular silicon carbide on the (1 1 1) faces of diamond while prismatic crystals are found on the (1 0 0) faces. The crystal growth seems to be favored in the plane parallel to the face (1 1 1)

  15. Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

    NARCIS (Netherlands)

    Nguyen, Duc Minh

    2010-01-01

    In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser

  16. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    Science.gov (United States)

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  17. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  18. Corrosion behaviour of 2124 aluminium alloy-silicon carbide metal matrix composites in sodium chloride environment

    International Nuclear Information System (INIS)

    Singh, Nirbhay; Vadera, K.K.; Ramesh Kumar, A.V.; Singh, R.S.; Monga, S.S.; Mathur, G.N.

    1999-01-01

    Aluminium alloy based particle reinforced metal matrix composites (MMCs) are being considered for a range of applications. Their mechanical properties have been investigated in detail, but more information about their corrosion resistance is needed. In this investigation, the corrosion behaviour of silicon carbide particulates (SiC p )-2124 aluminium metal matrix composites was studied in 3 wt% sodium chloride solution by means of electrochemical technique and optical microscope. The effects of weight percentages and particle size of silicon carbide particulates on corrosion behaviour of the composite were studied in NaCl and it was observed that corrosion rate increases linearly with the increasing weight percentage of SiC p . The corrosion rate of the MMC increases by increasing the size of SiC particles. Anodization improved corrosion resistance of the composites. (author)

  19. Surface/subsurface observation and removal mechanisms of ground reaction bonded silicon carbide

    Science.gov (United States)

    Yao, Wang; Zhang, Yu-Min; Han, Jie-cai; Zhang, Yun-long; Zhang, Jian-han; Zhou, Yu-feng; Han, Yuan-yuan

    2006-01-01

    Reaction Bonded Silicon Carbide (RBSiC) has long been recognized as a promising material for optical applications because of its unique combination of favorable properties and low-cost fabrication. Grinding of silicon carbide is difficult because of its high hardness and brittleness. Grinding often induces surface and subsurface damage, residual stress and other types of damage, which have great influence on the ceramic components for optical application. In this paper, surface integrity, subsurface damage and material removal mechanisms of RBSiC ground using diamond grinding wheel on creep-feed surface grinding machine are investigated. The surface and subsurface are studied with scanning electron microscopy (SEM) and optical microscopy. The effects of grinding conditions on surface and subsurface damage are discussed. This research links the surface roughness, surface and subsurface cracks to grinding parameters and provides valuable insights into the material removal mechanism and the dependence of grind induced damage on grinding conditions.

  20. Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

    International Nuclear Information System (INIS)

    Cheng Qijin; Xu, S.

    2007-01-01

    Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X≤33%) in the gas mixture employed in our experiments

  1. Fine defective structure of silicon carbide powders obtained from different starting materials

    Directory of Open Access Journals (Sweden)

    Tomila T.V.

    2006-01-01

    Full Text Available The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency νTO is presented.

  2. Creation of leak-proof silicon carbide diffusion barriers by means of pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Reinecke, A.-M.; Lustfeld, M.; Lippmann, W., E-mail: wolfgang.lippmann@tu-dresden.de; Hurtado, A.

    2014-05-01

    TRISO (tristructural isotropic) coated fuel particles are a crucial element of the HTR safety concept. While TRISO coated particles have been proven as a very efficient barrier for a large range of fission products in HTR experimental reactors, some particular fission products could still diffuse at a considerable rate. Most importantly, radioactive silver {sup 110m}Ag was found to be released from coated particles. In future HTRs with active components like a gas turbine in the primary circuit, such silver contamination may severely limit maintainability of these parts with the result of reduced life-time performance. So far, experimental analyses on silver diffusion through silicon carbide have led to contradictory results. In this work, an alternative method was used to generate silicon carbide layers as a basis for analysis of silver diffusion. With pulsed laser deposition (PLD), it is possible to generate coatings of different materials and various kinds of compounds. In particular, this technology allows the generation of layers very well defined with respect to their composition, purity and density. The microstructure can precisely be manipulated through various parameters. Based on different silicon carbide coatings with well-defined properties, we are going to investigate the silver diffusion process. Our goal is to derive the properties of an ideal silicon carbide coating preventing silver diffusion entirely. In this paper we present the major aspects of our work creating crystalline SiC layers as well as silver and CsI layers both on plane and spherical substrates. Analyses with X-ray diffraction, X-ray spectrometry and secondary ion mass spectrometry show that complex multilayer systems comprising a graphite substrate, a crystalline SiC layer and an intermediate silver layer were successfully created. Major challenges to approach in the future are the handling of high-level intrinsic stresses forming in the layer structure as well as the high vapour

  3. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  4. Performance of biomorphic Silicon Carbide as particulate filter in diesel boilers.

    Science.gov (United States)

    Orihuela, M Pilar; Gómez-Martín, Aurora; Becerra, José A; Chacartegui, Ricardo; Ramírez-Rico, Joaquín

    2017-12-01

    Biomorphic Silicon Carbide (bioSiC) is a novel porous ceramic material with excellent mechanical and thermal properties. Previous studies have demonstrated that it may be a good candidate for its use as particle filter media of exhaust gases at medium or high temperature. In order to determine the filtration efficiency of biomorphic Silicon Carbide, and its adequacy as substrate for diesel particulate filters, different bioSiC-samples have been tested in the flue gases of a diesel boiler. For this purpose, an experimental facility to extract a fraction of the boiler exhaust flow and filter it under controlled conditions has been designed and built. Several filter samples with different microstructures, obtained from different precursors, have been tested in this bench. The experimental campaign was focused on the measurement of the number and size of particles before and after placing the samples. Results show that the initial efficiency of filters made from natural precursors is severely determined by the cutting direction and associated microstructure. In biomorphic Silicon Carbide derived from radially cut wood, the initial efficiency of the filter is higher than 95%. Nevertheless, when the cut of the wood is axial, the efficiency depends on the pore size and the permeability, reaching in some cases values in the range 70-90%. In this case, the presence of macropores in some of the samples reduces their efficiency as particle traps. In continuous operation, the accumulation of particles within the porous media leads to the formation of a soot cake, which improves the efficiency except in the case when extra-large pores exist. For all the samples, after a few operation cycles, capture efficiency was higher than 95%. These experimental results show the potential for developing filters for diesel boilers based on biomorphic Silicon Carbide. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

    International Nuclear Information System (INIS)

    Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

    2005-01-01

    Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

  6. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  7. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  8. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  9. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  10. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    Science.gov (United States)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  11. Synthesis and investigation of silicon carbide nanowires by HFCVD

    Indian Academy of Sciences (India)

    We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of ...

  12. REFEL silicon carbide. The development of a ceramic for a nuclear engineering application

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, P.; Shennan, J. V.

    1974-10-15

    REFEL silicon carbide is a strong, uniform, fine-grain material which retains its strength and is stable in an oxidizing environment up to 1400 deg C. REFEL silicon carbide tube can be produced in quantity and by a combination of process controls, visual examination, NDT and proof testing, a very consistent product can be made. The material was developed as a nuclear fuel cladding capable of operating at temperatures o 1100 deg C in a CO2-cooled reactor and the combination of excellent physical, mechanical and chemical properties together with product consistency ave confirmed the feasibility of this application. In a series of irradiation experiments, REFEL silicon carbide clad fuel pins have behaved predictably. At irradiation temperatures below about 800 deg C, the thermal conductivity falls sharply, the associate thermal stress increases, and the probability of failure, for the same rating, increases. It has been demonstrated theoretically that this effect can be overcome by halving the tube wall thickness. In addition to the thermal stress enhancement, the strength and Weibull modulus also fall under irradiation and consequently the safe working stress is reduced, Calculations show that in the absence of irradiation a fourfold increase in rating cold be tolerated. Thus, the material should have excellent thermal stress resistance in non-nuclear applications such as gas turbine components. (auth)

  13. Comparative Evaluations and Microstructure: Mechanical Property Relations of Sintered Silicon Carbide Consolidated by Various Techniques

    Science.gov (United States)

    Barick, Prasenjit; Chatterjee, Arya; Majumdar, Bhaskar; Saha, Bhaskar Prasad; Mitra, Rahul

    2018-04-01

    A comparative evaluation between pressureless or self-sintered silicon carbide (SSiC), hot-pressed silicon carbide (HP-SiC), and spark plasma-sintered silicon carbide (SPS-SiC) has been carried out with emphasis on examination of their microstructures and mechanical properties. The effect of sample dimensions on density and properties of SPS-SiC has been also examined. Elastic modulus, flexural strength, and fracture toughness measured by indentation or testing of single-edge notched beam specimens have been found to follow the following trend, HP-SiC > SSiC > SPS-SiC. The SPS-SiC samples have shown size-dependent densification and mechanical properties, with the smaller sample exhibiting superior properties. The mechanical properties of sintered SiC samples appear to be influenced by relative density, grain size, and morphology, as well as the existence of intergranular glassy phase. Studies of fracture surface morphologies have revealed the mechanism of failure to be transgranular in SSiC or HP-SiC, and intergranular in case of SPS-SiC, indicating the dominating influence of grain size and α-SiC formation with high aspect ratio.

  14. Study of nano-metric silicon carbide powder sintering. Application to fibers processing

    International Nuclear Information System (INIS)

    Malinge, A.

    2011-01-01

    Silicon carbide ceramic matrix composites (SiCf/SiCm) are of interest for high temperature applications in aerospace or nuclear components for their relatively high thermal conductivity and low activation under neutron irradiation. While most of silicon carbide fibers are obtained through the pyrolysis of a poly-carbo-silane precursor, sintering of silicon carbide nano-powders seems to be a promising route to explore. For this reason, pressureless sintering of SiC has been studied. Following the identification of appropriate sintering aids for the densification, optimization of the microstructure has been achieved through (i) the analysis of the influence of operating parameters and (ii) the control of the SiC β a SiC α phase transition. Green fibers have been obtained by two different processes involving the extrusion of SiC powder dispersion in polymer solution or the coagulation of a water-soluble polymer containing ceramic particles. Sintering of these green fibers led to fibers of around fifty microns in diameter. (author) [fr

  15. Fabrication of p-type porous GaN on silicon and epitaxial GaN

    OpenAIRE

    Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

    2013-01-01

    Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

  16. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2017-03-15

    Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

  17. Molecular dynamics studies of radiation effects in silicon carbide

    International Nuclear Information System (INIS)

    Diaz de la Rubia, T.; Caturla, M.J.; Tobin, M.

    1995-01-01

    We discuss results of molecular dynamics computer simulation studies of 3 keV and 5 keV displacement cascades in β-SIC, and compare them to results of 5 keV cascades in pure silicon. The SiC simulations are performed with the Tersoff potential. For silicon we use the Stillinger-Weber potential. Simulations were carried out for Si recoils in 3 dimensional cubic computational cells With periodic boundary conditions and up to 175,616 atoms. The cascade lifetime in SiC is found to be extremely short. This, combined with the high melting temperature of SiC, precludes direct lattice amorphization during the cascade. Although large disordered regions result, these retain their basic crystalline structure. These results are in contrast with observations in pure silicon where direct-impact amorphization from the cascade is seen to take place. The SiC results also show anisotropy in the number of Si and C recoils as well as in the number of replacements in each sublattice. Details of the damage configurations obtained will be discussed

  18. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  19. Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

    Science.gov (United States)

    Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

    2018-01-01

    Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

  20. Multi-quantum spin resonances of intrinsic defects in silicon carbide

    International Nuclear Information System (INIS)

    Georgy Astakhov

    2014-01-01

    We report the observation of multi-quantum microwave absorption and emission, induced by the optical excitation of silicon vacancy related defects in silicon carbide (SiC). In particular, we observed two-quantum transitions from +3/2 to -1/2 and from -3/2 to +1/2 spin sublevels, unambiguously indicating the spin S = 3/2 ground state. Our findings may have implications for a broad range of quantum applications. On one hand, a single silicon vacancy defect is a potential source of indistinguishable microwave photon pairs due to the two-quantum emission process. On the other hand, the two-quantum absorption can be used generate a population inversion, which is a prerequisite to fabricate solid-state maser and quantum microwave amplifier. This opens a new platform cavity quantum electrodynamics experiments and quantum information processing on a single chip. (author)

  1. Epitaxial Growth of Germanium on Silicon for Light Emitters

    Directory of Open Access Journals (Sweden)

    Chengzhao Chen

    2012-01-01

    Full Text Available This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

  2. Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

    International Nuclear Information System (INIS)

    Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

    1987-01-01

    Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

  3. Band structure of germanium carbides for direct bandgap silicon photonics

    Energy Technology Data Exchange (ETDEWEB)

    Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2016-08-07

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  4. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Science.gov (United States)

    Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

    2017-10-01

    An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

  5. Disorder in silicon films grown epitaxially at low temperature

    International Nuclear Information System (INIS)

    Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

    2003-01-01

    Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

  6. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    Science.gov (United States)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  7. Densification of silicon and zirconium carbides by a new process: spark plasma sintering

    International Nuclear Information System (INIS)

    Guillard, F.

    2006-12-01

    Materials research for suitable utilization in 4. generation nuclear plants needs new ways to densify testing components. Two carbides, silicon and zirconium carbide seems to be the most suitable choice due to their mechanical, thermal and neutron-transparency properties against next nuclear plant specifications. Nevertheless one main difficulty remains, which is densifying them even at high temperature. Spark Plasma Sintering a new metal-, ceramic- and composite-sintering process has been used to densify both SiC and ZrC. Understanding bases of mass transport mechanisms in SPS have been studied. Composites and interfaces have been processed and analyzed. This manuscript reports original results on SiC and ZrC ceramics sintered with commercial powder started, without additives. (author)

  8. Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

    Directory of Open Access Journals (Sweden)

    Mauguin O.

    2012-11-01

    Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

  9. Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

    Science.gov (United States)

    Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

    2013-01-01

    When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

  10. Use of spectroscopic techniques for the chemical analysis of biomorphic silicon carbide ceramics

    International Nuclear Information System (INIS)

    Pavon, J.M. Cano; Alonso, E. Vereda; Cordero, M.T. Siles; Torres, A. Garcia de; Lopez-Cepero, J.M.

    2005-01-01

    Biomorphic silicon carbide ceramics are a new class of materials prepared by several complex processing steps including pre-processing (shaping, drying, high-temperature pyrolysis in an inert atmosphere) and reaction with liquid silicon to obtain silicon-carbide. The results of industrial process of synthesis (measured by the SiC content) must be evaluated by means of fast analytical methods. In the present work, diverse samples of biomorphic ceramics derived from wood are studied for to evaluate the capability of the different analytical techniques (XPS, LIBS, FT-IR and also atomic spectroscopy applied to previously dissolved samples) for the analysis of these materials. XPS and LIBS gives information about the major components, whereas XPS and FT-IR can be used to evaluate the content of SiC. On the other hand, .the use of atomic techniques (as ICP-MS and ETA-AAS) is more adequate for the analysis of metal ions, specially at trace level. The properties of ceramics depend decisively of the content of chemical elements. Major components found were C, Si, Al, S, B and Na in all cases. Previous dissolution of the samples was optimised by acid attack in an oven under microwave irradiation

  11. Fluidized bed deposition and evaluation of silicon carbide coatings on microspheres

    International Nuclear Information System (INIS)

    Federer, J.I.

    1977-01-01

    The fuel element for the HTGR is an array of closely packed fuel microspheres in a carbonaceous matrix. A coating of dense silicon carbide (SiC), along with pyrocarbon layers, is deposited on the fueled microspheres to serve as a barrier against diffusion of fission products. The microspheres are coated with silicon carbide in a fluidized bed by reaction of methyltrichlorosilane (CH 3 SiCl 3 or MTS) and hydrogen at elevated temperatures. The principal variables of coating temperature and reactant gas composition (H 2 /MTS ratio) have been correlated with coating rate, morphology, stoichiometry, microstructure, and density. The optimum temperature for depositing highly dense coatings is in the range 1475 to 1675 0 C. Lower temperatures result in silicon-rich deposits, while higher temperatures may cause unacceptable porosity. The optimum H 2 /MTS ratio for highly dense coatings is 20 or more (approximately 5% MTS or less). The amount of grown-in porosity increases as the H 2 /MTS ratio decreases below 20. The requirement that the H 2 /MTS ratio be about 20 or more imposes a practical restraint on coating rate, since increasing the total flow rate would eventually expel microspheres from the coating tube. Evaluation of stoichiometry, morphology, and microstructure support the above mentioned optimum conditions of temperature and reactant gas composition. 18 figures, 3 tables

  12. High temperature Hexoloy{trademark} SX silicon carbide. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan, G.V.; Lau, S.K.; Storm, R.S. [Carborundum Co., Niagara Falls, NY (United States)

    1994-09-01

    HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

  13. Electronic structures of ultra-thin silicon carbides deposited on graphite

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

  14. Joining silicon carbide to austenitic stainless steel through diffusion welding; Stellingen behorende bij het proefschrift

    Energy Technology Data Exchange (ETDEWEB)

    Krugers, Jan-Paul

    1993-01-19

    In this thesis, the results are presented of a study dealing with joining silicon carbide to austenitic stainless steel AIS316 by means of diffusion welding. Welding experiments were carried out without and with the use of a metallic intermediate, like copper, nickel and copper-nickel alloys at various conditions of process temperature, process time, mechanical pressure and interlayer thickness. Most experiments were carried out in high vacuum. For reasons of comparison, however, some experiments were also carried out in a gas shielded environment of 95 vol.% Ar and 5 vol.% H2.

  15. Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Ou, Yiyu

    light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... rendering performance and a much longer material lifetime compared with the commonly used wavelength-conversion material like Phosphors. In this thesis, f-SiC with different doping concentrations are analyzed and optimized in order to enhance the quantum efficiency. On the other hand, semiconductor...

  16. Radiation stable, hybrid, chemical vapor infiltration/preceramic polymer joining of silicon carbide components

    Energy Technology Data Exchange (ETDEWEB)

    Khalifa, Hesham E., E-mail: hesham.khalifa@ga.com [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States); Koyanagi, Takaaki [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge 37831, TN (United States); Jacobsen, George M.; Deck, Christian P.; Back, Christina A. [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States)

    2017-04-15

    This paper reports on a nuclear-grade joining material for bonding of silicon carbide-based components. The joint material is fabricated via a hybrid preceramic polymer, chemical vapor infiltration process. The joint is comprised entirely of β-SiC and results in excellent mechanical and permeability performance. The joint strength, composition, and microstructure have been characterized before and after irradiation to 4.5 dpa at 730 °C in the High Flux Isotope Reactor. The hybrid preceramic polymer-chemical vapor infiltrated joint exhibited complete retention of shear strength and no evidence of microstructural evolution or damage was detected following irradiation.

  17. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  18. Effect of hot isostatic pressing on the properties of sintered alpha silicon carbide

    Science.gov (United States)

    Watson, G. K.; Moore, T. J.; Millard, M. L.

    1985-01-01

    Two lots of alpha silicon carbide were isostatically hot-pressed under 138 MPa for 2 h in Ar at temperatures up to 2200 C. Nearly theoretically dense specimens resulted. Hot isostatic pressing increased both room-temperature strength and 1200 C strength, and resulted in improved reliability. One lot of material which was pressed at 2200 C showed increases of about 20 percent in room-temperature strength and about 50 percent in 1200 C flexural strength; the Weibull modulus improved about 100 percent.

  19. Microstructure and orientation effects on properties of discontinuous silicon carbide/aluminum composites

    Science.gov (United States)

    Mcdanels, D. L.; Hoffman, C. A.

    1984-01-01

    Composite panels containing up to 40 vol % discontinuous silicon carbide SiC whisker, nodule, or particulate reinforcement in several aluminum matrices are commercially fabricated and the mechanical properties and microstructual characteristics are evaluated. The yield and tensile strengths and the ductility are controlled primarily by the matrix alloy, the temper condition, and the reinforcement content. Particulate and nodule reinforcements are as effective as whisker reinforcement. Increased ductility is attributed to purer, more uniform starting materials and to more mechanical working during fabrication. Comparing mechanical properties with those of other aluminum alloys shows that these low cost, lightweight composites demonstrate very good potential for application to aerospace structures.

  20. Latest Advances in the Generation of Single Photons in Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Albert Boretti

    2016-06-01

    Full Text Available The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

  1. The effect of fiber microstructure on evolution of residual stresses in silicon carbide/titanium aluminide composites

    Science.gov (United States)

    Pindera, Marek-Jerzy; Freed, Alan D.

    1992-01-01

    This paper examines the effect of the morphology of the SCS6 silicon carbide fiber on the evolution of residual stresses in SiC/Ti composites. A micromechanics model based on the concentric cylinder concept is presented which is used to calculate residual stresses in a SiC/Ti composite during axisymmetric cooling by a spatially uniform temperature change. The silicon carbide fiber is modeled as a layered material with five distinct transversely isotropic and orthotropic, elastic layers, whereas the titanium matrix is taken to be isotropic, with temperature-dependent elastoplastic properties. The results arc compared with those obtained based on the assumption that the silicon carbide fiber is isotropic and homogeneous.

  2. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  3. Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

    2016-07-01

    Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

  4. Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

    International Nuclear Information System (INIS)

    Emelchenko, G.A.; Zhokhov, A.A.; Masalov, V.M.; Kudrenko, E.A.; Tereshenko, A.N.; Steinman, E.A.; Khodos, I.I.; Zinenko, V.I.; Agafonov, Yu.A.

    2011-01-01

    Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

  5. Locking of electron spin coherence above 20 ms in natural silicon carbide

    Science.gov (United States)

    Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

    2017-04-01

    We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

  6. Silicon carbide hollow fiber membranes: obtainment and characterization; Membranas de fibra oca de carbeto de silicio: obtencao e caracterizacao

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, S.S.L.; Ferreira, R.S.B.; Araujo, B.A.; Medeiros, K.M.; Lucena, H.L.; Araujo, E.M., E-mail: sandriely_sonaly@hotmail.com [Universidade Federal de Campina Grande (UFCG), PB (Brazil). Departamento de Engenharia de Materiais

    2016-07-01

    Silicon carbide is a promising material for the production of membranes due to its high melting temperature, thermal shock resistance, excellent mechanical and chemical stability. So, this study aims to characterize silicon carbide membranes in order to apply them in the separation of oil-water. A solution (SiC + PES + 1-Methyl- 2-Pyrrolidone) and through the extrusion technique by immersion precipitation membranes were obtained with hollow fiber geometry was prepared. And then sintered at 1500 ° C. For the characterization analyzes were made XRD, FTIR and SEM to evaluate the morphology and composition of the membranes obtained before and after sintering. (author)

  7. Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

    Science.gov (United States)

    Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

    2018-06-01

    Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

  8. Wide-bandgap epitaxial heterojunction windows for silicon solar cells

    Science.gov (United States)

    Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

    1990-01-01

    It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

  9. Device for fracturing silicon-carbide coatings on nuclear-fuel particles

    Science.gov (United States)

    Turner, L.J.; Willey, M.G.; Tiegs, S.M.; Van Cleve, J.E. Jr.

    This invention is a device for fracturing particles. It is designed especially for use in hot cells designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel materials, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

  10. Method for fracturing silicon-carbide coatings on nuclear-fuel particles

    Science.gov (United States)

    Turner, Lloyd J.; Willey, Melvin G.; Tiegs, Sue M.; Van Cleve, Jr., John E.

    1982-01-01

    This invention is a device for fracturing particles. It is designed especially for use in "hot cells" designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel material, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

  11. Application of La-ZSM-5 Coated Silicon Carbide Foam Catalyst for Toluene Methylation with Methanol

    Directory of Open Access Journals (Sweden)

    Debarpita Ghosal

    2015-07-01

    Full Text Available The performance of toluene methylation reaction was studied on H-ZSM-5 catalyst modified with La, Ce and Nb at different percentage loading. It was found that 10% metal loading produced the best performance in the reaction in terms of toluene conversion. The catalyst was coated on silicon carbide foam support which showed better conversion than the pelleted catalyst. Again, among the treated and untreated H-ZSM-5, the La-ZSM-5 catalyst is chosen for the reaction for its highest selectivity towards xylene, the main product. All catalysts were characterized in terms of surface properties, SEM, XRD and NH3-TPD. Kinetic study was done on La-ZSM-5 catalyst with 10% loading. In this kineticstudy, Langmuir Hinshelwood kinetic model with surface reaction as rate controlling step was selected as the rate equation. The activation energy was found to be 47 kJ/mol. © 2015 BCREC UNDIP. All rights reserved. Received: 9th December 2014; Revised: 27th April 2015; Accepted: 29th April 2015  How to Cite: Ghosal, D., Basu, J.K., Sengupta, S. (2015. Application of La-ZSM-5 Coated Silicon Carbide Foam Catalyst for Toluene Methylation with Methanol. Bulletin of Chemical Reaction Engineering & Catalysis, 10 (2: 201-209. (doi:10.9767/bcrec.10.2.7872.201-209 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.10.2.7872.201-209  

  12. Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors

    Science.gov (United States)

    Kim, Myeongjin; Yoo, Youngjae; Kim, Jooheon

    2014-11-01

    Synthesis of microsphere silicon carbide/nanoneedle MnO2 (SiC/N-MnO2) composites for use as high-performance materials in supercapacitors is reported herein. The synthesis procedure involves the initial treatment of silicon carbide (SiC) with hydrogen peroxide to obtain oxygen-containing functional groups to provide anchoring sites for connection of SiC and the MnO2 nanoneedles (N-MnO2). MnO2 nanoneedles are subsequently formed on the SiC surface. The morphology and microstructure of the as-prepared composites are characterized via X-ray diffractometry, field-emission scanning electron microscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. The characterizations indicate that MnO2 nanoneedles are homogeneously formed on the SiC surface in the composite. The capacitive properties of the as-prepared SiC/N-MnO2 electrodes are evaluated using cyclic voltammetry, galvanostatic charge/discharge testing, and electrochemical impedance spectroscopy in a three-electrode experimental setup using a 1-M Na2SO4 aqueous solution as the electrolyte. The SiC/N-MnO2(5) electrode, for which the MnO2/SiC feed ratio is 5:1, displays a specific capacitance as high as 273.2 F g-1 at 10 mV s-1.

  13. Microstructures of beta-silicon carbide after irradiation creep deformation at elevated temperatures

    International Nuclear Information System (INIS)

    Katoh, Yutai; Kondo, Sosuke; Snead, Lance L.

    2008-01-01

    Microstructures of silicon carbide were examined by transmission electron microscopy (TEM) after creep deformation under neutron irradiation. Thin strip specimens of polycrystalline and monocrystalline, chemically vapor-deposited, beta-phase silicon carbide were irradiated in the high flux isotope reactor to 0.7-4.2 dpa at nominal temperatures of 640-1080 deg. C in an elastically pre-strained bend stress relaxation configuration with the initial stress of ∼100 MPa. Irradiation creep caused permanent strains of 0.6 to 2.3 x 10 -4 . Tensile-loaded near-surface portions of the crept specimens were examined by TEM. The main microstructural features observed were dislocation loops in all samples, and appeared similar to those observed in samples irradiated in non-stressed conditions. Slight but statistically significant anisotropy in dislocation loop microstructure was observed in one irradiation condition, and accounted for at least a fraction of the creep strain derived from the stress relaxation. The estimated total volume of loops accounted for 10-45% of the estimated total swelling. The results imply that the early irradiation creep deformation of SiC observed in this work was driven by anisotropic evolutions of extrinsic dislocation loops and matrix defects with undetectable sizes

  14. Single Side Electrolytic In-Process Dressing (ELID) Grinding with Lapping Kinematics of Silicon Carbide

    Science.gov (United States)

    Khoshaim, Ahmed Bakr

    The demand for Silicon Carbide ceramics (SiC) has increased significantly in the last decade due to its reliable physical and chemical properties. The silicon carbide is widely used for aerospace segments in addition to many uses in the industry. Sometimes, a single side grinding is preferable than conventional grinding, for it has the ability to produce flat ceramics. However, the manufacturing cost is still high because of the high tool wear and long machining time. Part of the solution is to use electrolytic in process dressing (ELID) to reduce the processing time. The study on ELID single side grinding of ceramics has never been attempted before. The study involves four variables with three levels each. One of the variables, which is the eccentricity, is being investigated for the first time on ceramics. A full factorial design, for both the surface roughness and material removal rate, guides to calculate mathematical models that can predict future results. Three grinding wheel mesh sizes are used. An investigation of the influence of different grain size on the results can then be evaluated. The kinematics of the process was studied based on eccentricity in order to optimize the pattern of the diamond grains. The experiment is performed with the assist of the proposed specialized ELID fluid, TRIM C270E.

  15. On the characterisation of the dynamic compressive behaviour of silicon carbides subjected to isentropic compression experiments

    Directory of Open Access Journals (Sweden)

    Zinszner Jean-Luc

    2015-01-01

    Full Text Available Ceramic materials are commonly used as protective materials particularly due to their very high hardness and compressive strength. However, the microstructure of a ceramic has a great influence on its compressive strength and on its ballistic efficiency. To study the influence of microstructural parameters on the dynamic compressive behaviour of silicon carbides, isentropic compression experiments have been performed on two silicon carbide grades using a high pulsed power generator called GEPI. Contrary to plate impact experiments, the use of the GEPI device and of the lagrangian analysis allows determining the whole loading path. The two SiC grades studied present different Hugoniot elastic limit (HEL due to their different microstructures. For these materials, the experimental technique allowed evaluating the evolution of the equivalent stress during the dynamic compression. It has been observed that these two grades present a work hardening more or less pronounced after the HEL. The densification of the material seems to have more influence on the HEL than the grain size.

  16. Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2015-03-23

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

  17. Development of nano-structured silicon carbide ceramics: from synthesis of the powder to sintered ceramics

    International Nuclear Information System (INIS)

    Reau, A.

    2008-12-01

    The materials used inside future nuclear reactors will be subjected to very high temperature and neutrons flux. Silicon carbide, in the form of SiC f /SiC nano-structured composite is potentially interesting for this type of application. It is again necessary to verify the contribution of nano-structure on the behaviour of this material under irradiation. To verify the feasibility and determine the properties of the matrix, it was envisaged to produce it by powder metallurgy from SiC nanoparticles. The objective is to obtain a fully dense nano-structured SiC ceramic without additives. For that, a parametric study of the phases of synthesis and agglomeration was carried out, the objective of which is to determine the active mechanisms and the influence of the key parameters. Thus, studying the nano-powder synthesis by laser pyrolysis allowed to produce, with high production rates, homogeneous batches of SiC nanoparticles whose size can be adjusted between 15 and 90 nm. These powders have been densified by an innovating method: Spark Plasma Sintering (SPS). The study and the optimization of the key parameters allowed the densification of silicon carbide ceramic without sintering aids while preserving the nano-structure of material. The thermal and mechanical properties of final materials were studied in order to determine the influence of the microstructure on their properties. (author)

  18. Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Wang, Xiongfei

    2016-01-01

    This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influ......This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then......, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance...... of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed...

  19. UV laser ablation of silicon carbide ring surfaces for mechanical seal applications

    Science.gov (United States)

    Daurelio, Giuseppe; Bellosi, Alida; Sciti, Diletta; Chita, Giuseppe; Allegretti, Didio; Guerrini, Fausto

    2000-02-01

    Silicon carbide ceramic seal rings are treated by KrF excimer laser irradiation. Surface characteristics, induced by laser treatment, depend upon laser fluence, the number of laser pulses, their energy and frequency, the rotation rate of the ring and the processing atmosphere. It was ascertained that silicon carbide has to be processed under an inert atmosphere to avoid surface oxidation. Microstructural analyses of surface and cross section of the laser processed samples showed that the SiC surface is covered by a scale due to the melting/resolidification processes. At high fluence there are no continuous scales on the surfaces; materials is removed by decomposition/vaporization and the ablation depth is linearly dependent on the number of pulses. Different surface morphologies are observed. The evolution of surface morphology and roughness is discussed with reference to compositions, microstructure and physical and optical properties of the ceramic material and to laser processing parameters. Preliminary results on tribological behavior of the treated seals are reported.

  20. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  1. Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

    International Nuclear Information System (INIS)

    Uchino, T; Gili, E; Ashburn, P; Tan, L; Buiu, O; Hall, S

    2012-01-01

    A vertical MOSFET (VMOST) incorporating an epitaxial channel and a drain junction in a stacked silicon-insulator structure is presented. In this device structure, an oxide layer near the drain junction edge (referred to as a junction stop) acts as a dopant diffusion barrier and consequently a shallow drain junction is formed to suppress short channel effects. To investigate the scalability of this device, a simulation study in the sub-100 nm regime calibrated to measured results on the fabricated devices is carried out. The use of an epitaxial channel delivers 50% higher drive current due to the higher mobility of the retrograde channel and the junction stop structure delivers improvements of threshold voltage roll-off and drain-induced barrier lowering compared with a conventional VMOST. (fast track communication)

  2. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    Science.gov (United States)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  3. Increasing the radiation resistance of single-crystal silicon epitaxial layers

    Directory of Open Access Journals (Sweden)

    Kurmashev Sh. D.

    2014-12-01

    Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

  4. Investigation of the silicon ion density during molecular beam epitaxy growth

    CERN Document Server

    Eifler, G; Ashurov, K; Morozov, S

    2002-01-01

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate betw...

  5. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  6. Effect of metallic coating on the properties of copper-silicon carbide composites

    Science.gov (United States)

    Chmielewski, M.; Pietrzak, K.; Teodorczyk, M.; Nosewicz, S.; Jarząbek, D.; Zybała, R.; Bazarnik, P.; Lewandowska, M.; Strojny-Nędza, A.

    2017-11-01

    In the presented paper a coating of SiC particles with a metallic layer was used to prepare copper matrix composite materials. The role of the layer was to protect the silicon carbide from decomposition and dissolution of silicon in the copper matrix during the sintering process. The SiC particles were covered by chromium, tungsten and titanium using Plasma Vapour Deposition method. After powder mixing of components, the final densification process via Spark Plasma Sintering (SPS) method at temperature 950 °C was provided. The almost fully dense materials were obtained (>97.5%). The microstructure of obtained composites was studied using scanning electron microscopy as well as transmission electron microscopy. The microstructural analysis of composites confirmed that regardless of the type of deposited material, there is no evidence for decomposition process of silicon carbide in copper. In order to measure the strength of the interface between ceramic particles and the metal matrix, the micro tensile tests have been performed. Furthermore, thermal diffusivity was measured with the use of the laser pulse technique. In the context of performed studies, the tungsten coating seems to be the most promising solution for heat sink application. Compared to pure composites without metallic layer, Cu-SiC with W coating indicate the higher tensile strength and thermal diffusitivy, irrespective of an amount of SiC reinforcement. The improvement of the composite properties is related to advantageous condition of Cu-SiC interface characterized by well homogenity and low porosity, as well as individual properties of the tungsten coating material.

  7. Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2017-01-01

    Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

  8. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  9. Encapsulating of high-level radioactive waste with use of pyrocarbon and silicon carbide coatings

    International Nuclear Information System (INIS)

    Chernikov, A.

    2007-01-01

    It is known that high-level radioactive waste (HLW) constitute a real danger to biosphere, especially that their part, which contains transuranium and long-lived radionuclides resulting during reprocessing of nuclear fuel industrial and power reactors. Such waste contains approximately 99 % of long-lived fission products and transplutonium elements. At present, the concept of multi barrier protection of biosphere from radioactive waste is generally acknowledged. The main barriers are the physicochemical form of waste and enclosing strata of geological formation at places of waste-disposal. Applied methods of solidification of HLW with preparation of phosphatic and borosilicate glasses do not guarantee in full measure safety of places of waste-disposal of solidified waste in geological formations during thousand years. One promising way to improve HLW handling safety is placing of radionuclides in mineral-like matrixes similar to natural materials. The other possible way to increase safety of HLW disposal places is suggested for research by experts of Russian research institutes, for example, in the proposal for the Project of ISTC and considered in the present report, is to introduce an additional barrier on a radionuclides migration path by coating of HLW particles. Unique protective properties of pyrocarbon and silicon carbide such as low coefficients of diffusion of gaseous and solid fission products and high chemical and radiation stability [1] attract attention to these materials for coating of solidified HLW. The objective of the Project is the development of method of HLW encapsulating with use of pyrocarbon and silicon carbide coatings. To gain this end main direction of researches, including analysis of various encapsulation processes of fractionated HLW, and expected results are presented. Realization of the Project will allow to prove experimentally the efficiency of the proposed approach in the solution of the problem of HLW conditioning and ecological

  10. Estimate of toxically influence of silicon carbide nanoparticles according histopatologycal changes

    Directory of Open Access Journals (Sweden)

    Grozdanov Anita

    2013-07-01

    Full Text Available Taking in consideration a very wide application of nanoparticules in different industrial sectors due to their remarkable properties for implementation in different products, very important part for future development of nanotechology is following a histopatologycal changes provoke of this material.Silicon carbide (SiC as ceramic material with high thermal conductivity, high stability, good wear resistance and small thermal expansion coefficient is very applied in ceramic’s industry, power electronics, biomaterials, pharmaceutics etc. Histopathological changes of SiC particles were investigate on 4 weeks old female Wistar rats divided into four groups (two control and two experimental groups, sacrificed 2, 7 and 14 days after treatment. Histopathological diagnosis was performed on heart, liver, spleen, kidneys, lung, brain, gastrointestinal tract, using standard Hematoxilin-eosin staining methods. The main toxicological influences of SiC were observed on liver, lungs and gastrointestinal tract.

  11. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Pay Jun [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan); Manufacturing Process Department, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100, Durian Tunggal, Melaka (Malaysia); Yan, Jiwang, E-mail: yan@mech.keio.ac.jp [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Hiyoshi 3-14-1, Kohoku-ku, Yokohama, 223-8522 (Japan); Kuriyagawa, Tsunemoto [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan)

    2013-07-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  12. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    International Nuclear Information System (INIS)

    Liew, Pay Jun; Yan, Jiwang; Kuriyagawa, Tsunemoto

    2013-01-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  13. Power monitoring in space nuclear reactors using silicon carbide radiation detectors

    Science.gov (United States)

    Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

    2005-01-01

    Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

  14. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    Directory of Open Access Journals (Sweden)

    Sangchoel Kim

    2013-10-01

    Full Text Available We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5 layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  15. Tuning the thermal conductivity of silicon carbide by twin boundary: a molecular dynamics study

    International Nuclear Information System (INIS)

    Liu, Qunfeng; Wang, Liang; Shen, Shengping; Luo, Hao

    2017-01-01

    Silicon carbide (SiC) is a semiconductor with excellent mechanical and physical properties. We study the thermal transport in SiC by using non-equilibrium molecular dynamics simulations. The work is focused on the effects of twin boundaries and temperature on the thermal conductivity of 3C-SiC. We find that compared to perfect SiC, twinned SiC has a markedly reduced thermal conductivity when the twin boundary spacing is less than 100 nm. The Si–Si twin boundary is more effective to phonon scattering than the C–C twin boundary. We also find that the phonon scattering effect of twin boundary decreases with increasing temperature. Our findings provide insights into the thermal management of SiC-based electronic devices and thermoelectric applications. (paper)

  16. Joining of silicon carbide using interlayer with matching coefficient of thermal expansion

    International Nuclear Information System (INIS)

    Perham, T.

    1996-11-01

    The primary objective of this study is to develop a technique for joining a commercially available Silicon Carbide that gives good room temperature strength and the potential for good high temperature strength. One secondary objective is that the joining technique be adaptable to SiC f /SiC composites and/or Nickel based superalloys, and another secondary objective is that the materials provide good neutron irradiation resistance and low activation for potential application inside nuclear fusion reactors. The joining techniques studied here are: (1) reaction bonding with Al-Si/Si/SiC/C; (2) reaction/infiltration with calcium aluminum silicate; (3) ion exchange mechanism to form calcium hexaluminate (a refractory cement); and (4) oxide frit brazing with cordierite

  17. A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Valentín, L. A.; Betancourt, J.; Fonseca, L. F., E-mail: luis.fonseca@upr.edu [Department of Physics University of Puerto Rico, Rio Piedras (Puerto Rico); Pettes, M. T.; Shi, L. [Department of Mechanical Engineering, The University of Texas at Austin, Texas 78712 (United States); Soszyński, M.; Huczko, A. [Department of Chemistry, Warsaw University, Pasteur 1 Str., 02-093 Warsaw (Poland)

    2013-11-14

    The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.

  18. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Luo, Haoze; Iannuzzo, Francesco

    2017-01-01

    the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal......-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies...... decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more...

  19. Telescope and mirrors development for the monolithic silicon carbide instrument of the osiris narrow angle camera

    Science.gov (United States)

    Calvel, Bertrand; Castel, Didier; Standarovski, Eric; Rousset, Gérard; Bougoin, Michel

    2017-11-01

    The international Rosetta mission, now planned by ESA to be launched in January 2003, will provide a unique opportunity to directly study the nucleus of comet 46P/Wirtanen and its activity in 2013. We describe here the design, the development and the performances of the telescope of the Narrow Angle Camera of the OSIRIS experiment et its Silicon Carbide telescope which will give high resolution images of the cometary nucleus in the visible spectrum. The development of the mirrors has been specifically detailed. The SiC parts have been manufactured by BOOSTEC, polished by STIGMA OPTIQUE and ion figured by IOM under the prime contractorship of ASTRIUM. ASTRIUM was also in charge of the alignment. The final optical quality of the aligned telescope is 30 nm rms wavefront error.

  20. Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, J.; Qadri, S. N.; Caldwell, J. D. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, District of Columbia 20375 (United States)

    2015-09-14

    Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reaction between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.

  1. EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

    Science.gov (United States)

    Karray, Fekri; Kassiba, Abdelhadi

    2012-06-01

    Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

  2. High-temperature mechanical properties of a uniaxially reinforced zircon-silicon carbide composite

    International Nuclear Information System (INIS)

    Singh, R.N.

    1990-01-01

    This paper reports that mechanical properties of a monolithic zircon ceramic and zircon-matrix composites uniaxially reinforced with either uncoated or BN-coated silicon carbide monofilaments were measured in flexure between 25 degrees and 1477 degrees C. Monolithic zircon ceramics were weak and exhibited a brittle failure up to abut 1300 degrees C. An increasing amount of the plastic deformation was observed before failure above about 1300 degrees C. In contrast, composites reinforced with either uncoated or BN-coated Sic filaments were stronger and tougher than the monolithic zircon at all test temperatures between 25 degrees and 1477 degrees. The ultimate strength and work-of-fracture of composite samples decreased with increasing temperature. A transgranular matrix fracture was shown by the monolithic and composite samples tested up to about 1200 degrees C, whereas an increasing amount of the intergranular matrix fracture was displayed above 1200 degrees C

  3. Quantum Chemistry, and Eclectic Mix: From Silicon Carbide to Size Consistency

    Energy Technology Data Exchange (ETDEWEB)

    Rintelman, Jamie Marie [Iowa State Univ., Ames, IA (United States)

    2004-12-19

    Chemistry is a field of great breadth and variety. It is this diversity that makes for both an interesting and challenging field. My interests have spanned three major areas of theoretical chemistry: applications, method development, and method evaluation. The topics presented in this thesis are as follows: (1) a multi-reference study of the geometries and relative energies of four atom silicon carbide clusters in the gas phase; (2) the reaction of acetylene on the Si(100)-(2x1) surface; (3) an improvement to the Effective Fragment Potential (EFP) solvent model to enable the study of reactions in both aqueous and nonaqueous solution; and (4) an evaluation of the size consistency of Multireference Perturbation Theory (MRPT). In the following section, the author briefly discusses two topics central to, and present throughout, this thesis: Multi-reference methods and Quantum Mechanics/Molecular Mechanics (QM/MM) methods.

  4. Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

    International Nuclear Information System (INIS)

    Lutsenko, Vadym G.

    2008-01-01

    Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes

  5. Interaction of noble-metal fission products with pyrolytic silicon carbide

    International Nuclear Information System (INIS)

    Lauf, R.J.; Braski, D.N.

    1982-01-01

    Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain layers of pyrolytic carbon and silicon carbide, which act as a miniature pressure vessel and form the primary fission product barrier. Of the many fission products formed during irradiation, the noble metals are of particular interest because they interact significantly with the SiC layer and their concentrations are somewhat higher in the low-enriched uranium fuels currently under consideration. To study fission product-SiC interactions, particles of UO 2 or UC 2 are doped with fission product elements before coating and are then held in a thermal gradient up to several thousand hours. Examination of the SiC coatings by TEM-AEM after annealing shows that silver behaves differently from the palladium group

  6. Development of polishing methods for Chemical Vapor Deposited Silicon Carbide mirrors for synchrotron radiation

    International Nuclear Information System (INIS)

    Fuchs, B.A.; Brown, N.J.

    1987-01-01

    Material properties of Chemical Vapor Deposited Silicon Carbide (CVD SiC) make it ideal for use in mirrors for synchrotron radiation experiments. We developed methods to grind and polish flat samples of CVD SiC down to measured surface roughness values as low as 1.1 Angstroms rms. We describe the processing details, including observations we made during trial runs with alternative processing recipes. We conclude that pitch polishing using progressively finer diamond abrasive, augmented with specific water based lubricants and additives, produces superior results. Using methods based on these results, a cylindrical and a toroidal mirror, each about 100 x 300mm, were respectively finished by Continental Optical and Frank Cooke, Incorporated. WYCO Interferometry shows these mirrors have surface roughness less than 5.7 Angstroms rms. These mirrors have been installed on the LLNL/UC X-ray Calibration and Standards Facility at the Stanford Synthrotron Radiation Laboratory

  7. The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions

    Science.gov (United States)

    Ieshkin, A. E.; Kireev, D. S.; Ermakov, Yu. A.; Trifonov, A. S.; Presnov, D. E.; Garshev, A. V.; Anufriev, Yu. V.; Prokhorova, I. G.; Krupenin, V. A.; Chernysh, V. S.

    2018-04-01

    The gas cluster ion beam technique was used for the silicon carbide crystal surface smoothing. The effect of processing by two inert cluster ions, argon and xenon, was quantitatively compared. While argon is a standard element for GCIB, results for xenon clusters were not reported yet. Scanning probe microscopy and high resolution transmission electron microscopy techniques were used for the analysis of the surface roughness and surface crystal layer quality. The gas cluster ion beam processing results in surface relief smoothing down to average roughness about 1 nm for both elements. It was shown that xenon as the working gas is more effective: sputtering rate for xenon clusters is 2.5 times higher than for argon at the same beam energy. High resolution transmission electron microscopy analysis of the surface defect layer gives values of 7 ± 2 nm and 8 ± 2 nm for treatment with argon and xenon clusters.

  8. Use of Silicon Carbide as Beam Intercepting Device Material: Tests, Issues and Numerical Simulations

    CERN Document Server

    Delonca, M; Gil Costa, M; Vacca, A

    2014-01-01

    Silicon Carbide (SiC) stands as one of the most promising ceramic material with respect to its thermal shock resistance and mechanical strengths. It has hence been considered as candidate material for the development of higher performance beam intercepting devices at CERN. Its brazing with a metal counterpart has been tested and characterized by means of microstructural and ultrasound techniques. Despite the positive results, its use has to be evaluated with care, due to the strong evidence in literature of large and permanent volumetric expansion, called swelling, under the effect of neutron and ion irradiation. This may cause premature and sudden failure, and can be mitigated to some extent by operating at high temperature. For this reason limited information is available for irradiation below 100°C, which is the typical temperature of interest for beam intercepting devices like dumps or collimators. This paper describes the brazing campaign carried out at CERN, the results, and the theoretical and numeric...

  9. Environmental effects on the tensile strength of chemically vapor deposited silicon carbide fibers

    Science.gov (United States)

    Bhatt, R. T.; Kraitchman, M. D.

    1985-01-01

    The room temperature and elevated temperature tensile strengths of commercially available chemically vapor-deposited (CVD) silicon carbide fibers were measured after 15 min heat treatment to 1600 C in various environments. These environments included oxygen, air, argon and nitrogen at one atmosphere and vacuum at 10/9 atmosphere. Two types of fibers were examined which differed in the SiC content of their carbon-rich coatings. Threshold temperature for fiber strength degradation was observed to be dependent on the as-received fiber-flaw structure, on the environment and on the coating. Fractographic analyses and flexural strength measurements indicate that tensile strength losses were caused by surface degradation. Oxidation of the surface coating is suggested as one possible degradation mechanism. The SiC fibers containing the higher percentage of SiC near the surface of the carbon-rich coating show better strength retention and higher elevated temperature strength.

  10. High-temperature effect of hydrogen on sintered alpha-silicon carbide

    Science.gov (United States)

    Hallum, G. W.; Herbell, T. P.

    1986-01-01

    Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrision at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

  11. Stark tuning and electrical charge state control of single divacancies in silicon carbide

    Science.gov (United States)

    de las Casas, Charles F.; Christle, David J.; Ul Hassan, Jawad; Ohshima, Takeshi; Son, Nguyen T.; Awschalom, David D.

    2017-12-01

    Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects and hinders their coupling to optical cavities. Here, we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show that both 975 nm and 1130 nm excitation can prepare their neutral charge state with near unity efficiency.

  12. Nanoparticles and nanorods of silicon carbide from the residues of corn

    Science.gov (United States)

    Qadri, S. B.; Gorzkowski, E.; Rath, B. B.; Feng, J.; Qadri, S. N.; Kim, H.; Caldwell, J. D.; Imam, M. A.

    2015-01-01

    We have investigated the thermally induced transformation of various residues of the corn plant into nanoparticles and nanorods of different silicon carbide (SiC) polytypes. This has been accomplished by both microwave-induced and conventional furnace pyrolysis in excess of 1450 °C in an inert atmosphere. This simple process of producing nanoparticles of different polytypes of SiC from the corn plant opens a new method of utilizing agricultural waste to produce viable industrial products that are technologically important for nanoelectronics, molecular sensors, nanophotonics, biotechnology, and other mechanical applications. Using x-ray and Raman scattering characterization, we have demonstrated that the processed samples of corn husk, leaves, stalks, and cob consist of SiC nanostructures of the 2H, 3C, 4H, and 6H polytypes.

  13. EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

    Energy Technology Data Exchange (ETDEWEB)

    Karray, Fekri [Laboratoire des materiaux Ceramiques Composites et Polymeres, Faculte des Sciences de Sfax, BP 802, 3018 Sfax (Tunisia); Kassiba, Abdelhadi, E-mail: kassiba@univ-lemans.fr [Institute of Molecules and Materials of Le Mans (I3M), UMR-CNRS 6283, Universite du Maine, 72085 Le Mans (France)

    2012-06-15

    Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

  14. SILICON CARBIDE MICRO-DEVICES FOR COMBUSTION GAS SENSING UNDER HARSH CONDITIONS

    Energy Technology Data Exchange (ETDEWEB)

    Ruby N. Ghosh; Peter Tobias; Roger G. Tobin

    2004-04-01

    A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. Robust metallization and electrical contacting techniques have been developed for device operation at elevated temperatures. To characterize the time response of the sensor responses in the millisecond range, a conceptually new apparatus has been built. Software has been developed to cope with the requirements of fast sensor control and data recording. In addition user friendly software has been developed to facilitate use of the SiC sensors for industrial process control applications.

  15. Effect of Liquid Phase Content on Thermal Conductivity of Hot-Pressed Silicon Carbide Ceramics

    International Nuclear Information System (INIS)

    Lim, Kwang-Young; Jang, Hun; Lee, Seung-Jae; Kim, Young-Wook

    2015-01-01

    Silicon carbide (SiC) is a promising material for Particle-Based Accident Tolerant (PBAT) fuel, fission, and fusion power applications due to its superior physical and thermal properties such as low specific mass, low neutron cross section, excellent radiation stability, low coefficient of thermal expansion, and high thermal conductivity. Thermal conductivity of PBAT fuel is one of very important factors for plant safety and energy efficiency of nuclear reactors. In the present work, the effect of Y 2 O 3 -Sc 2 O 3 content on the microstructure and thermal properties of the hot pressed SiC ceramics have been investigated. Suppressing the β to α phase transformation of SiC ceramics is beneficial in increasing the thermal conductivity of liquid-phase sintered SiC ceramics. Developed SiC ceramics with Y 2 O 3 -Sc 2 O 3 additives are very useful for thermal conductivity on matrix material of the PBAT fuel

  16. Performance of Silicon carbide whisker reinforced ceramic inserts on Inconel 718 in end milling process

    International Nuclear Information System (INIS)

    Reddy, M M; Joshua, C X H

    2016-01-01

    An experimental investigation is planned in order to study the machinability of Inconel 718 with silicon carbide whisker reinforced ceramic inserts in end milling process. The relationship between the cutting speed, feed rate, and depth of cut against the response factors are studied to show the level of significance of each parameter. The cutting parameters are optimized by using Taguchi method. Implementing analysis of variance, the parameter which influences the surface roughness the most is determined to be the cutting speed, followed by the feed rate and depth of cut. Meanwhile, the optimal cutting condition is determined to have high cutting speed, low feed rate, and high depth of cut in the range of selected parameters. (paper)

  17. Stress testing on silicon carbide electronic devices for prognostics and health management.

    Energy Technology Data Exchange (ETDEWEB)

    Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

    2011-01-01

    Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

  18. 5 kW bidirectional grid-connected drive using silicon-carbide switches: Control

    DEFF Research Database (Denmark)

    Kouchaki, Alireza; Lazar, Radu; Pedersen, Jacob Lykke

    2017-01-01

    his paper presents a controller design for a fully silicon-carbide (SiC) based bidirectional three-phase grid-connected PWM drive. For drive applications, controller must be robust and fast to be able to provide power flow in both directions. In this paper, proportional resonance (PR) current con...... magnet motor. Different tests will be conducted to evaluate the performance of the controllers in both generative and regenerative mode. It is shown that the controller can provide a good dynamic response to load changes for both direction of power flow.......-phase rectifier with switching frequency of 45 kHz will be tested. The test is done by connecting it to a grid simulator and the load is a resistive load. In the second test the rectifier will be connected to the grid via an auto-transformer and load is a 7.5kW SiC based drive which is connected to a permanent...

  19. Thermal shock behaviour of mullite-bonded porous silicon carbide ceramics with yttria addition

    International Nuclear Information System (INIS)

    Ding Shuqiang; Zeng Yuping; Jiang Dongliang

    2007-01-01

    Thermal shock resistance of mullite (3Al 2 O 3 · 2SiO 2 )-bonded porous silicon carbide (SiC) ceramics with 3.0 wt% yttria (Y 2 O 3 ) addition was evaluated by a water-quenching technique. The thermal shock damage was investigated as a function of the quenching temperature, quenching cycles and specimen thickness. The residual flexural strength of the quenched specimens decreases with increasing quenching temperature and specimen thickness due to the larger thermal stress caused by thermal shock. However, quenching cycles at the temperature difference of 1200 deg. C have no effect on the residual strength since the same thermal stress was produced in repeated thermal shock processes. The good thermal shock damage resistance of the specimens is contributed mainly by the low strength and moderate elastic modulus. Moreover, the pores prevent the continuous propagation of cracks and alleviate further damage

  20. Ab initio density functional theory investigation of Li-intercalated silicon carbide nanotube bundles

    International Nuclear Information System (INIS)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2009-01-01

    We present the results of ab initio density functional theory calculations on the energetic, and geometric and electronic structure of Li-intercalated (6,6) silicon carbide nanotube (SiCNT) bundles. Our results show that intercalation of lithium leads to the significant changes in the geometrical structure. The most prominent effect of Li intercalation on the electronic band structure is a shift of the Fermi energy which occurs as a result of charge transfer from lithium to the SiCNTs. All the Li-intercalated (6,6) SiCNT bundles are predicted to be metallic representing a substantial change in electronic properties relative to the undoped bundle, which is a wide band gap semiconductor. Both inside of the nanotube and the interstitial space are susceptible for intercalation. The present calculations suggest that the SiCNT bundle is a promising candidate for the anode material in battery applications.

  1. Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-10-01

    By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius.

  2. Ab initio density functional theory investigation of Li-intercalated silicon carbide nanotube bundles

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2009-06-01

    We present the results of ab initio density functional theory calculations on the energetic, and geometric and electronic structure of Li-intercalated ( 6,6) silicon carbide nanotube (SiCNT) bundles. Our results show that intercalation of lithium leads to the significant changes in the geometrical structure. The most prominent effect of Li intercalation on the electronic band structure is a shift of the Fermi energy which occurs as a result of charge transfer from lithium to the SiCNTs. All the Li-intercalated ( 6,6) SiCNT bundles are predicted to be metallic representing a substantial change in electronic properties relative to the undoped bundle, which is a wide band gap semiconductor. Both inside of the nanotube and the interstitial space are susceptible for intercalation. The present calculations suggest that the SiCNT bundle is a promising candidate for the anode material in battery applications.

  3. Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

    International Nuclear Information System (INIS)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-01-01

    By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius

  4. Ab initio density functional theory investigation of Li-intercalated silicon carbide nanotube bundles

    Energy Technology Data Exchange (ETDEWEB)

    Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), PO Box 19395-5531, Tehran (Iran, Islamic Republic of)], E-mail: moradian.rostam@gmail.com; Behzad, Somayeh; Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2009-06-15

    We present the results of ab initio density functional theory calculations on the energetic, and geometric and electronic structure of Li-intercalated (6,6) silicon carbide nanotube (SiCNT) bundles. Our results show that intercalation of lithium leads to the significant changes in the geometrical structure. The most prominent effect of Li intercalation on the electronic band structure is a shift of the Fermi energy which occurs as a result of charge transfer from lithium to the SiCNTs. All the Li-intercalated (6,6) SiCNT bundles are predicted to be metallic representing a substantial change in electronic properties relative to the undoped bundle, which is a wide band gap semiconductor. Both inside of the nanotube and the interstitial space are susceptible for intercalation. The present calculations suggest that the SiCNT bundle is a promising candidate for the anode material in battery applications.

  5. The effect of carbon mole ratio on the fabrication of silicon carbide

    Directory of Open Access Journals (Sweden)

    Sutham Niyomwas

    2008-03-01

    Full Text Available Silicon Carbide (SiC particles were synthesized by self-propagating high temperature synthesis (SHS from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of carbon mole ratio on the precursor mixture (C/SiO2/Mg: 1/1/2 to 3/1/2 and on the SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the SiC particles.

  6. Diorganosilacetylene-alt-diorganosilvinylene polymers and a process densifying porous silicon-carbide bodies

    Science.gov (United States)

    Barton, Thomas J.; Ijadi-Maghsoodi, Sina; Pang, Yi

    1994-05-17

    The present invention provides linear organosilicon polymers including acetylene and vinylene moieties, and a process for their preparation. These diorganosilacetylene-alt-diorganosilvinylene linear polymers can be represented by the formula: --[--(R.sup.1)(R.sup.2)Si--C.tbd.C--(R.sup.3)(R.sup.4)Si--CH=CH--].sub.n-- , wherein n.gtoreq.2; and each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently selected from the group consisting of hydrogen, halogen, alkyl, alkenyl, aryl, and aralkyl radicals. The polymers are soluble in organic solvents, air stable, and can be pulled into fibers or cast into films. They can be thermally converted into silicon carbide ceramic materials.

  7. Compressive deformation of liquid phase-sintered porous silicon carbide ceramics

    Directory of Open Access Journals (Sweden)

    Taro Shimonosono

    2014-12-01

    Full Text Available Porous silicon carbide ceramics were fabricated by liquid phase sintering with 1 wt% Al2O3–1 wt% Y2O3 additives during hot-pressing at 1400–1900 °C. The longitudinal strain at compressive fracture increased at a higher porosity and was larger than the lateral strain. The compressive Young's modulus and the strain at fracture depended on the measured direction, and increased with the decreased specific surface area due to the formation of grain boundary. However, the compressive strength and the fracture energy were not sensitive to the measured direction. The compressive strength of a porous SiC compact increased with increasing grain boundary area. According to the theoretical modeling of the strength–grain boundary area relation, it is interpreted that the grain boundary of a porous SiC compact is fractured by shear deformation rather than by compressive deformation.

  8. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  9. X-ray powder diffraction analysis of liquid-phase-sintered silicon carbide ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz, A.L.; Sanchez-Bajo, F. [Universidad de Extremadura, Badajoz (Spain). Dept. de Electronica e Ingenieria Electromecanica; Cumbrera, F.L. [Universidad de Extremadura, Badajoz (Spain). Dept. de Fisica

    2002-07-01

    In an attempt to gain a comprehensive understanding of the microstructural evolution in liquid-phase-sintered silicon carbide ceramics, the effect of the starting {beta}-SiC powder has been studied. Pellets of two different {beta}-SiC starting powders were sintered with simultaneous additions of Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} at 1950 C for 1 hour in flowing argon atmosphere. Here we have used X-ray diffraction to obtain the relative abundance of the resulting SiC polytypes after sintering. The significant influence of the defects concentration on the {beta} to {alpha} transformation rate has been determined using the Rietveld method. (orig.)

  10. Silver diffusion through silicon carbide in microencapsulated nuclear fuels TRISO; Difusion de plata a traves de carburo de silicio en combustibles nucleares microencapsulados TRISO

    Energy Technology Data Exchange (ETDEWEB)

    Cancino T, F.; Lopez H, E., E-mail: Felix.cancino@cinvestav.edu.mx [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Saltillo, Av. Industria Metalurgica No. 1062, Col. Ramos Arizpe, 25900 Saltillo, Coahuila (Mexico)

    2013-10-15

    The silver diffusion through silicon carbide is a challenge that has persisted in the development of microencapsulated fuels TRISO (Tri structural Isotropic) for more than four decades. The silver is known as a strong emitter of gamma radiation, for what is able to diffuse through the ceramic coatings of pyrolytic coal and silicon carbide and to be deposited in the heat exchangers. In this work we carry out a recount about the art state in the topic of the diffusion of Ag through silicon carbide in microencapsulated fuels and we propose the role that the complexities in the grain limit can have this problem. (Author)

  11. Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

    2014-09-01

    The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

  12. A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries.

    Science.gov (United States)

    Chen, Bing-Hong; Chuang, Shang-I; Liu, Wei-Ren; Duh, Jenq-Gong

    2015-12-30

    In this study, a jumbo silicon/silicon carbide (Si/SiC) composite (JSC), a novel anode material source, was extracted from solar power industry cutting waste and used as a material for lithium-ion batteries (LIBs), instead of manufacturing the nanolized-Si. Unlike previous methods used for preventing volume expansion and solid electrolyte interphase (SEI), the approach proposed here simply entails applying surface modification to JSC-based electrodes by using nitrogen-atmospheric pressure plasma jet (N-APPJ) treatment process. Surface organic bonds were rearranged and N-doped compounds were formed on the electrodes through applying different plasma treatment durations, and the qualitative examinations of before/after plasma treatment were identified by X-ray photoelectron spectroscopy (XPS) and electron probe microanalyzer (EPMA). The surface modification resulted in the enhancement of electrochemical performance with stable capacity retention and high Coulombic efficiency. In addition, depth profile and scanning electron microscope (SEM) images were executed to determine the existence of Li-N matrix and how the nitrogen compounds change the surface conditions of the electrodes. The N-APPJ-induced rapid surface modification is a major breakthrough for processing recycled waste that can serve as anode materials for next-generation high-performance LIBs.

  13. FLiNaK compatibility studies with Inconel 600 and silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Yoder, Graydon L., E-mail: yodergljr@ornl.gov [Oak Ridge National Laboratory, Bldg. 5700, MS 6167 Bethel Valley Rd., Oak Ridge, TN 37831 (United States); Heatherly, Dennis; Wilson, Dane [Oak Ridge National Laboratory, Bldg. 5700, MS 6167 Bethel Valley Rd., Oak Ridge, TN 37831 (United States); Caja, Mario [Electrochemical Systems, Inc. (ESI), 9320 Collingwood Rd., Knoxville, TN 37922 (United States)

    2016-10-15

    Highlights: • A versatile experimental design has been developed to examine liquid fluoride salt materials compatibility behavior. • Samples of silicon carbide and a grafoil/nickel spiral wound gasket were exposed to FLiNaK salt at 700 °C for 90 days and showed no degradation. • Alloy 600 showed material effects penetrating up to 300 μm below the salt interface after exposure to the salt for 90 days at 700 °C. • Comparison of the Alloy 600 corrosion results with existing data indicated that results were comparable to the few corrosion results available for Alloy 600. • Sapphire viewing windows incorporated in the experiment showed fogging by condensed salt components at the highest test temperatures. - Abstract: A small liquid fluoride salt test apparatus has been constructed and testing has been conducted to examine the compatibility of silicon carbide (SiC), Inconel 600 and a spiral wound gasket material in FLiNaK, the ternary eutectic alkaline metal fluoride salt mixture. These tests were conducted to evaluate materials and sealing systems that could be used in fluoride salt systems. Three months of testing at 700 °C was conducted to assure that these materials and seals would be acceptable when operating under prototypic operating conditions. The SiC specimens showed little or no change over the test period, while the spiral wound gasket material did not show any degradation except that salt might have been seeping into the outermost spirals of the gasket. The Inconel 600 specimens showed regions of voiding which penetrated the specimen surface to about 250 μm in depth. Analysis indicated that the salt had leached chrome from the Inconel surface, as was expected for this material.

  14. Analysis of obsydians and films of silicon carbide by RBS technique

    International Nuclear Information System (INIS)

    Franco S, F.

    1998-01-01

    Motivated by archaeological interest this work is presented, which consist in the characterization of obsydian samples from different mineral sites in Mexico and films of silicon carbide, undertaken by an Ion Beam Analysis: RBS (Rutherford Back Scattering). As part of an intensive investigation of obsydian in Mesoamerica by anthropologists from Mexico National Institute of Anthropology and History, 818 samples were collected from different volcanic sources in Central Mexico for the purpose of establishing a data bank of element concentrations of each source. Part of this collection was analyzed by Neutron activation analysis and most of the important elements concentrations reported. In the first part of this work, the non-destructive IBA technique, RBS are used to analyze obsydian samples. The last part is an analysis of thin films of silicon carbide as a part of a research program of the Universidad Nacional Autonoma de Mexico and ININ. The application of this technique were carried out at the IF-UNAM, and the analysis was performed at laboratories of the ININ Nuclear Centre facilities. The samples considered in this work were mounted on a sample holder designed for the purpose of exposing each sample to the alpha particles beam. This RBS analysis was carried out with an ET Tandem accelerator at the IF UNAM. The spectrometry was carried out with employing a Si(Li) detector set at 15 degrees in relation to the target normal. The mean projectile energy was 2.00 MeV, and the beam profile was about 4 mm in diameter. As results were founded elemental concentrations of a set of samples from ten different sources: Altotonga (Veracruz), Penjamo (Guanajuato), Otumba (Mexico), Zinapecuaro (MIchoacan), Ucareo (Michoacan), Tres Cabezas (Puebla), Sierra Navajas (Hidalgo), Zaragoza (Puebla), Guadalupe Victoria (Puebla) and Oyameles (Puebla). The mean values are accompanied by errors expressed as one standard devistion of the mean for each element

  15. The fabrication of quantum wires in silicon utilising the characteristics of solid phase epitaxial regrowth of crystalline silicon

    International Nuclear Information System (INIS)

    Liu, A.C.Y.; McCallum, J.C.

    1998-01-01

    The process of solid phase epitaxy (SPE) in semiconductor materials is one which has been intensively researched due to possible applications in the semiconductor industry. SPE is a solid phase transformation, in which an amorphous layer can be recrystallized either through heating or a combination of heating and ion bombardment. The transformation is believed to occur exclusively at the interface between the amorphous and crystalline layers, with individual atoms from the amorphous phase being incorporated into the crystalline phase by some point defect mechanism. The process has been observed to follow an Arrhenius temperature dependence. A wafer silicon was subjected to a multi-energy silicon implant through a fine nickel grid to amorphise region to a depth of 5μm creating an array of amorphous wells. Metal impurity atoms were then implanted in this region at energy of 500 keV. Samples were examined using an optical microscope and the Alphastep profiler at RMIT. It was confirmed that burgeoning wells were about 2 μm wide and rose about 0.01 μm above the silicon substrate

  16. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    International Nuclear Information System (INIS)

    Pomaska, M.; Beyer, W.; Neumann, E.; Finger, F.; Ding, K.

    2015-01-01

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO x :H/intrinsic a-SiO x :H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO x :H/a-SiO x :H stack a promising front layer configuration • Void expansion at a-SiO x :H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  17. Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface

    International Nuclear Information System (INIS)

    Pal, Debdas; Hoag, David; Barter, Margaret

    2012-01-01

    Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H 2 0/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 Ω. The lower series resistance (5.6–5.9 Ω) and near 1 ideality factor (1.03–1.06) of the Schottky devices indicated the good quality of the epitaxial layer. (paper)

  18. Investigation of the silicon ion density during molecular beam epitaxy growth

    Science.gov (United States)

    Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

    2002-05-01

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

  19. A clean measurement of the hydrogen retardation of the rate of solid phase epitaxy in silicon

    International Nuclear Information System (INIS)

    Liu, A.C.Y.; McCallum, J.C.

    1999-01-01

    The rate retarding effects of the impurity hydrogen on solid phase epitaxy (SPE) in silicon have yet to be completely understood. Existing measurements of this behaviour do not coincide exactly, however, several features have attained prominence. Firstly, a linear decrease in the SPE rate is detected up until a certain concentration of hydrogen. Subsequent to this point the rate remains almost constant at around half the intrinsic rate. It is conjectured that the hydrogen bonds to and passivates the defects whose agency enables the incorporation of atoms from the amorphous phase to the crystalline. This rate reduction increases until the defect population is saturated. At this point the reduction in rate ceases. Secondly, a dependence on temperature has not been consolidated, in contrast with the trends observed with the doping species. Here a method is proposed for producing a controlled concentration of hydrogen for the advancing amorphous/crystalline interface to encounter during epitaxy. A bubble layer is formed in crystalline silicon approximately 0.6μm beneath the surface through the implantation of hydrogen at 65 keV with fluences of 4 x 10 16 /cm 2 and 3 x 10 16 /cm 2 and annealing for 1 hour at 850 deg C in dry argon. The anneal doesn't out gas all the introduced hydrogen, leaving a remnant gas pressure in the bubbles. The hydrogen implants at the two fluences should yield two samples with different amounts of hydrogen trapped in the bubbles. A buried amorphous layer is created to encompass the bubble layer containing this residual contaminant through silicon self implantation at appropriate energies and fluences. The progress of the front interface of the buried amorphous layer is monitored by time resolved reflectivity (TRR) as SPE is effected at various temperatures

  20. Theoretical study of silicon carbide under irradiation at the nano scale: classical and ab initio modelling

    International Nuclear Information System (INIS)

    Lucas, G.

    2006-10-01

    The behaviour of silicon carbide under irradiation has been studied using classical and ab initio simulations, focusing on the nano scale elementary processes. First, we have been interested in the calculation of threshold displacement energies, which are difficult to determine both experimentally and theoretically, and also the associated Frenkel pairs. In the framework of this thesis, we have carried out simulations in classical and ab initio molecular dynamics. For the classical approach, two types of potentials have been used: the Tersoff potential, which led to non satisfactory results, and a new one which has been developed during this thesis. This potential allows a better modelling of SiC under irradiation than most of the empirical potentials available for SiC. It is based on the EDIP potential, initially developed to describe defects in silicon, that we have generalized to SiC. For the ab initio approach, the feasibility of the calculations has been validated and average energies of 19 eV for the C and 38 eV for the Si sublattices have been determined, close to the values empirically used in the fusion community. The results obtained with the new potential EDIP are globally in agreement with those values. Finally, the elementary processes involved in the crystal recovery have been studied by calculating the stability of the created Frenkel pairs and determining possible recombination mechanisms with the nudged elastic band method. (author)

  1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Tuttle, Blair R. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2015-06-15

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  2. 3C-Silicon Carbide Microresonators for Timing and Frequency Reference

    Directory of Open Access Journals (Sweden)

    Graham S. Wood

    2016-11-01

    Full Text Available In the drive to miniaturise and integrate reference oscillator components, microelectromechanical systems (MEMS resonators are excellent candidates to replace quartz crystals. Silicon is the most utilised resonator structural material due to its associated well-established fabrication processes. However, when operation in harsh environments is required, cubic silicon carbide (3C-SiC is an excellent candidate for use as a structural material, due to its robustness, chemical inertness and high temperature stability. In order to actuate 3C-SiC resonators, electrostatic, electrothermal and piezoelectric methods have been explored. Both electrothermal and piezoelectric actuation can be accomplished with simpler fabrication and lower driving voltages, down to 0.5 V, compared to electrostatic actuation. The vibration amplitude at resonance can be maximised by optimising the design and location of the electrodes. Electrical read out of the resonator can be performed with electrostatic or piezoelectric transduction. Finally, a great deal of research has focused on tuning the resonant frequency of a 3C-SiC resonator by adjusting the DC bias applied to the electrodes, with a higher (up to 160-times tuning range for electrothermal tuning compared to piezoelectric tuning. Electrothermal tuning lowers the frequency, while piezoelectric tuning can be used to raise the frequency.

  3. X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

    2011-01-01

    Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

  4. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  5. Fabrication and characterization of reaction bonded silicon carbide/carbon nanotube composites

    International Nuclear Information System (INIS)

    Thostenson, Erik T; Karandikar, Prashant G; Chou, T.-W.

    2005-01-01

    Carbon nanotubes have generated considerable excitement in the scientific and engineering communities because of their exceptional mechanical and physical properties observed at the nanoscale. Carbon nanotubes possess exceptionally high stiffness and strength combined with high electrical and thermal conductivities. These novel material properties have stimulated considerable research in the development of nanotube-reinforced composites (Thostenson et al 2001 Compos. Sci. Technol. 61 1899, Thostenson et al 2005 Compos. Sci. Technol. 65 491). In this research, novel reaction bonded silicon carbide nanocomposites were fabricated using melt infiltration of silicon. A series of multi-walled carbon nanotube-reinforced ceramic matrix composites (NT-CMCs) were fabricated and the structure and properties were characterized. Here we show that carbon nanotubes are present in the as-fabricated NT-CMCs after reaction bonding at temperatures above 1400 deg. C. Characterization results reveal that a very small volume content of carbon nanotubes, as low as 0.3 volume %, results in a 75% reduction in electrical resistivity of the ceramic composites. A 96% decrease in electrical resistivity was observed for the ceramics with the highest nanotube volume fraction of 2.1%

  6. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  7. Silicon carbide-silicon as a support material for oxygen evolution reaction in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Petrushina, Irina; Christensen, Erik

    cells. In the present work a commercial SiC-Si, produced by the Acheson process, with a fraction of free silicon around 20% wt. was investigated as a catalyst support for anode electrocatalyst in PEM steam electrolysers. This electrocatalyst system was characterized using several techniques such as XRD......, cyclic voltammetry, SEM, EDX and steady state electrochemical polarisation in a working PEM steam electrolyser. Several SiC-Si-IrO2 electrodes have been prepared and tested. The iridium oxide content at the electrode active layer varied from x=0.2 to x=1, corresponding to the general formula (1-x...... for phosphoric acid doped membrane steam electrolysers....

  8. Friction and Wear of Metals With a Single-Crystal Abrasive Grit of Silicon Carbide - Effect of Shear Strength of Metal

    National Research Council Canada - National Science Library

    Miyoshi, Kazuhisa

    1978-01-01

    An investigation was conducted to examine the removal and plastic deformation of metal as a function of the metal properties when the metal is in sliding contact with a single-crystal abrasive grit of silicon carbide...

  9. Silicon carbide recovered from photovoltaic industry waste as photocatalysts for hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Hu, Yu [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Zeng, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Zhong, Lin, E-mail: zhonglin@scu.edu.cn [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Liu, Kewei; Cao, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Li, Wei [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Yan, Hongjian, E-mail: hjyan@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China)

    2017-05-05

    Highlights: • SiC was recovered from photovoltaic industry waste. • The recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides. • The recovered SiC shows photocatalytic H{sub 2} evolution from water. - Abstract: In recent years, the focus on creating a dependable and efficient means to recycle or recover the valuable parts from the waste material has drawn significantly attention as an environmentally friendly way to deal with the industrial wastes. The silicon carbide (SiC) crystalline is one of reusable material in the slurry wastes generated during wafer slicing. Here we report the use of recovered SiC from the slurry wastes as photocatalysts to produce hydrogen in the presence of Na{sub 2}SO{sub 3}-Na{sub 2}S as electron donor. The recovered SiC were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy spectra (XPS), UV–vis (UV–vis) spectroscopy, and photoluminescence (PL) spectroscopy. The morphology of SiC loaded with 1 wt% Pt as cocatalyst by thermal-reduction method was observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM). The experimental results reveal that the recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides on the surface of the SiC. The highest hydrogen production rate is 191.8 μmol h{sup −1} g{sup −1}. This study provides a way to recycle crystalline SiC from the discharged waste in the photovoltaic industry and reuse it as photocatalyst to yield hydrogen with the advantage of low energy consumption, low pollution and easy operation.

  10. Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

    International Nuclear Information System (INIS)

    Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

    2006-01-01

    The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

  11. Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

    1999-01-01

    Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

  12. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    Science.gov (United States)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  13. Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

    International Nuclear Information System (INIS)

    Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

    2007-01-01

    We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

  14. Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

    International Nuclear Information System (INIS)

    Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

    2013-01-01

    We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

  15. Effective synthesis of silicon carbide nanotubes by microwave heating of blended silicon dioxide and multi-walled carbon nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Tony, Voo Chung Sung; Voon, Chun Hong; Lee, Chang Chuan and others, E-mail: chvoon@unimap.edu.my [Institute of Nano Electronic Engineering, University Malaysia (Malaysia)

    2017-11-15

    Silicon carbide nanotube (SiCNTs) has been proven as a suitable material for wide applications in high power, elevated temperature and harsh environment. For the first time, we reported in this article an effective synthesis of SiCNTs by microwave heating of SiO{sub 2} and MWCNTs in molar ratio of 1:1, 1:3, 1:5 and 1:7. Blend of SiO{sub 2} and MWCNTs in the molar ratio of 1:3 was proven to be the most suitable for the high yield synthesis of β-SiCNTs as confirmed by X-ray diffraction pattern. Only SiCNTs were observed from the blend of MWCNTs and SiO{sub 2} in the molar ratio of 1:3 from field emission scanning electron microscopy imaging. High magnification transmission electron microscopy showed that tubular structure of MWCNT was preserved with the inter-planar spacing of 0.25 nm. Absorption bands of Si-C bond were detected at 803 cm-1 in Fourier transform infrared spectrum. Thermal gravimetric analysis revealed that SiCNTs from ratio of 1:3 showed the lowest weight loss. Thus, our synthetic process indicates high yield conversion of SiO{sub 2} and MWCNTs to SiCNTs was achieved for blend of SiO{sub 2} and MWCNTs in molar ratio of 1:3. (author)

  16. Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

    CERN Document Server

    Lange, Jörn; Fretwurst, Eckhart; Klanner, Robert; Lindström, Gunnar

    2010-01-01

    Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and $\\alpha$-particles with optional absorbers) were used to locate the CM region close to the p$^+$-implantation. The dependence of CM on material, thickness of the epitaxial layer, annealing and temperature was studied. The collected charge in the CM regime was found to be proportional to the deposited charge, uniform over the diode area and stable over a period of several days. Randomly occurring micro discharges at high voltages turned out to be the largest challenge for operation of the dio...

  17. Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

    Science.gov (United States)

    Sullivan, Roy M.

    2016-01-01

    The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

  18. Silicon Carbide Defect Qubits/Quantum Memory with Field-Tuning: OSD Quantum Science and Engineering Program (QSEP)

    Science.gov (United States)

    2017-08-01

    TECHNICAL REPORT 3073 August 2017 Silicon Carbide Defect Qubits/Quantum Memory with Field-tuning: OSD Quantum Science and Engineering Program...Quantum Science and Engineering Program) by the Advanced Concepts and Applied Research Branch (Code 71730), the Energy and Environmental Sustainability...the Secretary of Defense (OSD) Quantum Science and Engineering Program (QSEP). Their collaboration topic was to examine the effect of electric-field

  19. Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

    Science.gov (United States)

    Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

    2014-01-01

    This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

  20. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  1. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Science.gov (United States)

    Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

    2013-12-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  2. Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2009-12-01

    By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

  3. Thermo-Mechanical Properties of Unsaturated Polyester Reinforced with SiliconCarbide Powder And with Chopped Glass Fiber

    Directory of Open Access Journals (Sweden)

    Bushra Hosnie Musa

    2018-02-01

    Full Text Available The work studied the effectoffine silicon carbide (SiC powder with (0,3,5,7wt % on the thermal conductivity and mechanical properties of unsaturated polyester composite in the presence of a fixed amount of chopped glass fiber. The hand lay-up technique was employed to preparethe required samples. Results showed that tensile, impact strength and thermal conductivity increased with increasing the weight fraction of reinforced materials.

  4. [Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

    Science.gov (United States)

    Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

    2013-06-01

    Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

  5. Reaction sintering of a clay-containing silicon nitride bonded silicon carbide refractory

    International Nuclear Information System (INIS)

    Swenser, S.P.; Cheng, Y.B.

    1998-01-01

    Aspects of the reaction sequence for the reaction bonding of a cast refractory, which in the green state was composed of 79 wt-% SiC grit, 16 wt-% Si powder and 5 wt-% clay were established. As it was fired up to 1600 deg C in flowing N 2 (g), weight gains were noted and phase evolution was monitored by X-ray diffraction. However, details of the reaction sequence were not determined directly from this material because several reaction-bonding processes occurred simultaneously. Reaction features were ascertained by contrasting the weight changes and phase evolution in the refractory with those observed during reaction-bonding of (a) Si and clay without the SiC and (b) SiC and clay without the Si. In addition to silicon nitridation and the development of sialon phases by silicothermal and carbothermal reduction-nitridation processes, indirect evidence suggested that α-Si 3 N 4 formed by the carbothermal reduction-nitridation (CRN) of SiO(g). Copyright (1998) Australasian Ceramic Society

  6. High temperature monitoring of silicon carbide ceramics by confocal energy dispersive X-ray fluorescence spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Li, Fangzuo; Liu, Zhiguo; Sun, Tianxi, E-mail: stx@bnu.edu.cn

    2016-04-15

    Highlights: • X-ray scattering was used for monitoring oxidation situation of SiC ceramics. • A calibration curve was obtained. • The confocal X-ray scattering technology was based on polycapillary X-ray optics. • The variations of contents of components of SiC ceramics were obtained. - Abstract: In the present work, we presented an alternative method for monitoring of the oxidation situation of silicon carbide (SiC) ceramics at various high temperatures in air by measuring the Compton-to-Rayleigh intensity ratios (I{sub Co}/I{sub Ra}) and effective atomic numbers (Z{sub eff}) of SiC ceramics with the confocal energy dispersive X-ray fluorescence (EDXRF) spectrometer. A calibration curve of the relationship between I{sub Co}/I{sub Ra} and Z{sub eff} was established by using a set of 8 SiC calibration samples. The sensitivity of this approach is so high that it can be easily distinguished samples of Z{sub eff} differing from each other by only 0.01. The linear relationship between the variation of Z{sub eff} and the variations of contents of C, Si and O of SiC ceramics were found, and the corresponding calculation model of the relationship between the ΔZ and the ΔC{sub C}, ΔC{sub Si}, and ΔC{sub O} were established. The variation of contents of components of the tested SiC ceramics after oxidation at high temperature was quantitatively calculated based on the model. It was shown that the results of contents of carbon, silicon and oxygen obtained by this method were in good agreement with the results obtained by XPS, giving values of relative deviation less than 1%. It was concluded that the practicality of this proposed method for monitoring of the oxidation situation of SiC ceramics at high temperatures was acceptable.

  7. Helium interaction with vacancy-type defects created in silicon carbide single crystal

    Science.gov (United States)

    Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.

    2013-05-01

    Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

  8. Mechanical and thermal properties of phthalonitrile resin reinforced with silicon carbide particles

    International Nuclear Information System (INIS)

    Derradji, Mehdi; Ramdani, Noureddine; Zhang, Tong; Wang, Jun; Feng, Tian-tian; Wang, Hui; Liu, Wen-bin

    2015-01-01

    Highlights: • SiC microparticles improve the mechanical properties of phthalonitrile resin. • Excellent thermal stability achieved by adding SiC particles in phthalonitrile resin. • Adding 20 wt.% of SiC microparticles increases the T g by 38 °C. • Silane coupling agent can enhance the adhesion and dispersion of particles/matrix. - Abstract: A new type of composite based on phthalonitrile resin reinforced with silicon carbide (SiC) microparticles was prepared. For various weight ratios ranging between 0% and 20%, the effect of the micro-SiC particles on the mechanical and thermal properties has been studied. Results from thermal analysis revealed that the starting decomposition temperature and the residual weight were significantly improved upon adding the reinforcing phase. At the maximum micro-SiC loading, dynamic mechanical analysis (DMA) showed an important enhancement in both the storage modulus and glass transition temperature (T g ), reaching 3.1 GPa and 338 °C, respectively. The flexural strength and modulus as well as the microhardness were significantly enhanced by adding the microfillers. Tensile test revealed enhancements in the composites toughness upon adding the microparticles. Polarization optical microscope (POM) and scanning electron microscope (SEM) analysis confirmed that mechanical and thermal properties improvements are essentially attributed to the good dispersion and adhesion between the particles and the resin

  9. Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kollo, Lauri, E-mail: lauri.kollo@staff.ttu.e [Laboratory of Advanced Materials Processing, EMPA, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Department of Materials Engineering, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Leparoux, Marc; Bradbury, Christopher R.; Jaeggi, Christian [Laboratory of Advanced Materials Processing, EMPA, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Carreno-Morelli, Efrain; Rodriguez-Arbaizar, Mikel [University of Applied Sciences of Western Switzerland, Design and Materials Unit, 1950 Sion (Switzerland)

    2010-01-21

    High-energy planetary milling was used for mixing aluminium powders with 1 vol.% of silicon carbide (SiC) nanoparticles. A number of milling parameters were modified for constituting the relationship between the energy input from the balls and the hardness of the bulk nanocomposite materials. It was shown that mixing characteristics and reaction kinetics with stearic acid as process control agent can be estimated by normalised input energy from the milling bodies. For this, the additional parameter characterising the vial filling was determined experimentally. Depending on the ball size, a local minimum in filling parameter was found, laying at 25 or 42% filling of the vial volume for the balls with diameter of 10 and 20 mm, respectively. These regions should be avoided to achieve the highest milling efficiency.After a hot compaction, fourfold difference of hardness for different milling conditions was detected. Therewith the hardness of the Al-1 vol.% nanoSiC composite could be increased from 47 HV{sub 0.5} of pure aluminium to 163 HV{sub 0.5} when milling at the highest input energy levels.

  10. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

    Science.gov (United States)

    Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance L.

    2016-03-01

    Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

  11. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  12. Helium interaction with vacancy-type defects created in silicon carbide single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Linez, F., E-mail: florence.linez@aalto.fi [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France); Gilabert, E. [CENBG, U.R.A. 451 CNRS, Université de Bordeaux I, BP120, Le Haut Vigneau, 33175 Gradignan Cedex (France); Debelle, A. [CSNSM, Univ. Paris-Sud, CNRS-IN2P3, 91405 Orsay Campus (France); Desgardin, P.; Barthe, M.-F. [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France)

    2013-05-15

    Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H–SiC single crystals have been implanted with 50 keV-He ions at 2 × 10{sup 14} and 10{sup 15} cm{sup −2} and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

  13. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S. [U.S. Army Research Laboratory, WMRD, Aberdeen Proving Ground, Maryland 21005 (United States); Shanholtz, E. R. [ORISE, Belcamp, Maryland 21017 (United States)

    2016-07-14

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  14. Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide

    International Nuclear Information System (INIS)

    Rawski, M.; Zuk, J.; Kulik, M.; Drozdziel, A.; Pyszniak, K.; Turek, M.; Lin, L.; Prucnal, S.

    2011-01-01

    Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500 o C Al + ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600 o C) thermal annealing. (author)

  15. Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling.

    Science.gov (United States)

    Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

    2017-01-28

    Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 10 3 to 10 4  s -1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones.This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'. © 2016 The Author(s).

  16. Effect of laser pulsed radiation on the properties of implanted layers of silicon carbide

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Voron'ko, O.N.; Nojbert, F.; Potapov, E.N.

    1984-01-01

    Results are presented of investigation into pulsed laser radiation effects on the layers of GH polytype silicon carbide converted to amorphous state by implantation of boron and aluminium ions. The implantation doses were selected to be 5x10 16 for boron and 5x10 15 cm -2 for aluminium, with the ion energies being 60 and 80 keV, respectively. The samples annealed under nanosecond regime are stated to posseys neither photoluminescence (PL) nor cathodoluminescence (CL). At the same time the layers annealed in millisecond regime have a weak PL at 100 K and CL at 300 K. The PL and CL are observed in samples, laser-annealed at radiation energy density above 150-160 J/cm 2 in case of boron ion implantation and 100-120 J/cm 2 in case of aluminium ion implantation. Increasing the radiation energy density under the nanosecond regime of laser annealing results in the surface evaporation due to superheating of amorphous layers. Increasing the energy density above 220-240 J/cm 2 results in destruction of the samples

  17. Effect of gamma radiation on the electrical properties of Polyaniline/silicon carbide heterojunctions

    International Nuclear Information System (INIS)

    Felix, Jorlandio F.; Cunha, Diego L. da; Aziz, Mohsin; Silva, Eronides F. da; Taylor, David; Henini, Mohamed; Azevedo, Walter M. de

    2014-01-01

    Polyaniline thin films have been deposited by a very simple technique on p-type Silicon Carbide (SiC) substrates to fabricate heterojunctions devices with good electrical properties. In this work two heterojunctions devices of Polyaniline (PANI) on p-type 4H–SiC and 6H–SiC substrates were electrically characterized using current- voltage (I-V) in the temperature range 20–430 K Capacitance–frequency (C-f) measurements. Furthermore, impedance and capacitance measurements are carried out to study the effect of gamma irradiation on these devices. Additionally, we demonstrate not only the ease of fabrication of PANI/p-SiC heterostructures, but also we show strong indication that these heterostructures have potential applications as sensors of gamma irradiation. - Highlights: • We demonstrate the fabrication of PANI/p-SiC devices with good electrical properties. • The electrical characteristics of the devices present good reproducibility. • We show that the PANI/p-SiC devices are good candidates for gamma irradiation sensors

  18. Rapid Chemical Vapor Infiltration of Silicon Carbide Minicomposites at Atmospheric Pressure.

    Science.gov (United States)

    Petroski, Kenneth; Poges, Shannon; Monteleone, Chris; Grady, Joseph; Bhatt, Ram; Suib, Steven L

    2018-02-07

    The chemical vapor infiltration technique is one of the most popular for the fabrication of the matrix portion of a ceramic matrix composite. This work focuses on tailoring an atmospheric pressure deposition of silicon carbide onto carbon fiber tows using the methyltrichlorosilane (CH 3 SiCl 3 ) and H 2 deposition system at atmospheric pressure to create minicomposites faster than low pressure systems. Adjustment of the flow rate of H 2 bubbled through CH 3 SiCl 3 will improve the uniformity of the deposition as well as infiltrate the substrate more completely as the flow rate is decreased. Low pressure depositions conducted at 50 Torr deposit SiC at a rate of approximately 200 nm*h -1 , while the atmospheric pressure system presented has a deposition rate ranging from 750 nm*h -1 to 3.88 μm*h -1 . The minicomposites fabricated in this study had approximate total porosities of 3 and 6% for 10 and 25 SCCM infiltrations, respectively.

  19. Theoretical studies of the lithium atom on the silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Yu, Guolong; Chen, Na; Wang, Feifei; Xie, Yiqun; Ye, Xiang; Gu, Xiao

    2014-01-01

    Based on density functional theory method, we have investigated structural, electronic, and magnetic properties of lithium (Li) atom adsorbed on silicon carbide (SiC) zigzag (9,0) and armchair (5,5) nanotubes. Effective adsorptions are found on both inner- and outer-side of the SiC nanotubes, with adsorption energies ranging from 1.03 to 1.71 eV. Interestingly, we have found that SiC nanotubes exhibit different behaviors with several Li adsorption sites. Li adsorptions on the s-Si and s-H sites of the outer surface and all the five sites of the inner surface in zigzag (9,0) nanotube emerge metallic features, whereas adsorptions on other sides of (9,0) and all sites of armchair (5,5) SiC nanotubes show semiconducting characters. The calculating results also indicate that lithium adsorptions on most sites of SiC nanotubes yield spontaneous magnetization, where net magnetic moment is 1 μ B . Additionally, spin density of states, spin density distribution, and charge density difference are also calculated to investigate the electronic and magnetic properties of SiC nanotubes induced by Li adsorption

  20. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    International Nuclear Information System (INIS)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S.; Shanholtz, E. R.

    2016-01-01

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  1. Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

    Science.gov (United States)

    Erzar, Benjamin

    2017-01-01

    Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s−1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual–Forquin–Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue ‘Experimental testing and modelling of brittle materials at high strain rates’. PMID:27956504

  2. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    Directory of Open Access Journals (Sweden)

    Nick Baker

    2017-03-01

    Full Text Available In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs, it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

  3. Additive Manufacturing of Silicon Carbide-Based Ceramic Matrix Composites: Technical Challenges and Opportunities

    Science.gov (United States)

    Singh, Mrityunjay; Halbig, Michael C.; Grady, Joseph E.

    2016-01-01

    Advanced SiC-based ceramic matrix composites offer significant contributions toward reducing fuel burn and emissions by enabling high overall pressure ratio (OPR) of gas turbine engines and reducing or eliminating cooling air in the hot-section components, such as shrouds, combustor liners, vanes, and blades. Additive manufacturing (AM), which allows high value, custom designed parts layer by layer, has been demonstrated for metals and polymer matrix composites. However, there has been limited activity on additive manufacturing of ceramic matrix composites (CMCs). In this presentation, laminated object manufacturing (LOM), binder jet process, and 3-D printing approaches for developing ceramic composite materials are presented. For the laminated object manufacturing (LOM), fiber prepreg laminates were cut into shape with a laser and stacked to form the desired part followed by high temperature heat treatments. For the binder jet, processing optimization was pursued through silicon carbide powder blending, infiltration with and without SiC nano powder loading, and integration of fibers into the powder bed. Scanning electron microscopy was conducted along with XRD, TGA, and mechanical testing. Various technical challenges and opportunities for additive manufacturing of ceramics and CMCs will be presented.

  4. Neutron detection performance of silicon carbide and diamond detectors with incomplete charge collection properties

    Energy Technology Data Exchange (ETDEWEB)

    Hodgson, M., E-mail: michael.hodgson@becq.co.uk [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Lohstroh, A.; Sellin, P. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomas, D. [NPL, Teddington TW11 0LW (United Kingdom)

    2017-03-01

    The benefits of neutron detection and spectroscopy with carbon based, wide band gap, semiconductor detectors have previously been discussed within the literature. However, at the time of writing there are still limitations with these detectors related to availability, cost, size and perceived quality. This study demonstrates that lower quality materials—indicated by lower charge collection efficiency (CCE), poor resolution and polarisation effect—available at wafer scale and lower cost, can fulfil requirements for fast neutron detection and spectroscopy for fluxes over several orders of magnitude, where only coarse energy discrimination is required. In this study, a single crystal diamond detector (D-SC, with 100% CCE), a polycrystalline diamond (D-PC, with ≈4% CCE) and semi-insulating silicon carbide (SiC-SI, with ≈35% CCE) have been compared for alpha and fast neutron performance. All detectors demonstrated alpha induced polarisation effects in the form of a change of both energy peak position and count rate with irradiation time. Despite these operational issues the ability to detect fast neutrons and distinguish neutron energies was observed. This performance was demonstrated over a wide dynamic range (500–40,000 neutrons/s), with neutron induced polarisation being demonstrated in D-PC and SiC-SI at high fluxes.

  5. A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

    Science.gov (United States)

    Yang, Jie

    2013-01-01

    In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 °C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 °C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance. PMID:23377189

  6. Silicon carbide detectors for diagnostics of ion emission from laser plasmas

    International Nuclear Information System (INIS)

    Musumeci, Paolo; Zimbone, Massimo; Calcagno, Lucia; Cutroneo, Maria; Torrisi, Lorenzo; Velyhan, Andry

    2014-01-01

    Silicon carbide (SiC) detectors have been employed to analyze the multi-MeV ions generated from laser plasma. The irradiation was performed with the iodine laser of Prague Asterix Laser System Laboratory operating at 10 16  W cm −2 pulse intensity. Thin metallic and polymeric targets were irradiated and the produced plasmas were monitored in the forward direction. The use of SiC detectors ensures the cutting of the visible and soft UV radiation emitted from plasma, enhancing the sensitivity to protons and very fast heavy ions. The time-of-flight spectra obtained by irradiating polymeric films with high laser pulse energy produce protons with energy in the range 1.0–2.5 MeV and all the charge states of carbon ions. The metallic Al target allows achieving energy up to 3.0 MeV for protons and 40 MeV for Al ions. All the results reveal the high performances of these detectors in terms of resolution and response time. (paper)

  7. Modeling chemical and topological disorder in irradiation-amorphized silicon carbide

    International Nuclear Information System (INIS)

    Yuan Xianglong; Hobbs, Linn W.

    2002-01-01

    In order to explore the relationship of chemical disorder to topological disorder during irradiation-induced amorphization of silicon carbide, a topological analysis of homonuclear bond distribution, atom coordination number and network ring size distribution has been carried out for imposed simulated disorder, equilibrated with molecular dynamics (MD) procedures utilizing a Tersoff potential. Starting configurations included random atom positions, β-SiC coordinates chemically disordered over a range of chemical disorder parameters and atom coordinates generated from earlier MD simulations of embedded collision cascades. For random starting positions in embedded simulations, the MD refinement converged to an average Si coordination of 4.3 and an average of 1.4 Si-Si and 1.0 C-C bonds per Si and C site respectively. A chemical disorder threshold was observed (χ≡N C-C /N Si-C >0.3-0.4), below which range MD equilibration resulted in crystalline behavior at all temperatures and above which a glass transition was observed. It was thus concluded that amorphization is driven by a critical concentration of homonuclear bonds. About 80% of the density change at amorphization was attributable to threshold chemical disorder, while significant topological changes occurred only for larger values of the chemical disorder parameter

  8. Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics study

    International Nuclear Information System (INIS)

    Malerba, L.; Perlado, J.M.

    2002-01-01

    Studying the effects of radiation in silicon carbide (SiC) is important for its possible use in both nuclear and electronic technology. One of the most important parameters to describe radiation damage in a material is the threshold displacement energy (TDE). In this paper, the computational technique known as molecular dynamics (MD) is used to determine the TDE's along different crystallographic directions for Si and C atoms in SiC, also allowing for irradiation temperature effects, and to study in detail the mechanisms of atomic displacement production in this material. For this purpose, the widely tested Tersoff potential, implemented in a MD code optimized to study the interaction of high-energy ions with crystals, is used to describe the interatomic forces in SiC. It is found that it is difficult to define a single threshold for this material. Instead, the introduction of two thresholds, upper and lower, becomes necessary. These two thresholds delimit an uncertainty band, within which the displacement may or may not be produced, because the Frenkel pairs generated in such a transferred-kinetic-energy range are metastable. The Arrhenius law expressing the lifetime of one of these metastable defects has also been deduced from the simulation. Finally, on the basis of the results of the simulation, possible values for the recombination distance and the average threshold energy (E d,Si and E d,C ) in SiC are proposed and discussed

  9. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zi-Bo; Xu, Xu [Yangzhou University, College of Environmental Science and Engineering, Yangzhou, Jiangsu (China); Bai, Shu-Li [Wuyi University, College of Chemical and Environmental Engineering, Jiangmen, Guangdong (China); Guan, Yu-Jiang; Jiang, Sheng-Tao [Taizhou University, Environmental Engineering, Taizhou, Zhejiang (China)

    2017-03-15

    The aim of this work was to study the preparation of SiC-supported V{sub 2}O{sub 5} catalysts and the kinetics on selective catalytic reduction for NO with NH{sub 3} on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V{sub 2}O{sub 5} existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH{sub 3} has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH{sub 3}, first-order with respect to NO, and half-order to O{sub 2}. Apparent activation energy for the reduction reaction was found to be 38 kJ mol{sup -1}. The prepared materials are stable and reusable. (orig.)

  10. Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

    Science.gov (United States)

    Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

    2017-01-01

    Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s-1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'.

  11. Electromagnetic local density of states in graphene-covered porous silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Ting [Department of Physics, Nanchang University, Nanchang 330031 (China); Wang, Tong-Biao, E-mail: tbwang@ncu.edu.cn [Department of Physics, Nanchang University, Nanchang 330031 (China); Liao, Qing-Hua; Liu, Jiang-Tao; Yu, Tian-Bao [Department of Physics, Nanchang University, Nanchang 330031 (China); Liu, Nian-Hua [Institute for Advanced Study, Nanchang University, Nanchang 330031 (China)

    2017-06-21

    Surface phonon polariton supported by silicon carbide (SiC) can be strongly coupled with graphene plasmon in the graphene-covered SiC bulk. The spectrum of the electromagnetic local density of states exhibits two peaks whose positions can be tuned by the chemical potential of graphene. In this work, we study the electromagnetic local density of states in the proximity of a graphene-covered SiC with periodic hole arrays. The well-known peak from the coupling of surface polariton supported by SiC and graphene plasmon splits into two. With increased volume ratio of holes, one of the split peak shifts towards high frequencies, whereas the other moves towards low frequencies. The dependence of split-peak positions on the chemical potential and permittivity of filling materials in the holes are also investigated. This study offers another method of modulating the electromagnetic local density of states. - Highlights: • The electromagnetic local density of states in the proximity of graphene-covered anisotropic SiC is firstly studied. • The peak from resonance of surface phonon polaritons in the EM-LDOS spectrum can be split into two. • The split peaks can be tuned by chemical potential, filling factor, and filling materials. • Our results provide a new method to modulate the EM-LDOS.

  12. Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

    Directory of Open Access Journals (Sweden)

    Philip G. Neudeck

    2016-12-01

    Full Text Available The prolonged operation of semiconductor integrated circuits (ICs needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the ∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks electrical operation of two silicon carbide (4H-SiC junction field effect transistor (JFET ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus.

  13. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States); Zarkadoula, Eva [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sachan, Ritesh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Army Research Office, Triangle Park, NC (United States); Ostrouchov, Christopher [Univ. of Tennessee, Knoxville, TN (United States); Liu, Peng [Univ. of Tennessee, Knoxville, TN (United States); Shandong Univ., Jinan (China); Wang, Xue -lin [Shandong Univ., Jinan (China); Zhang, Shuo [Lanzhou Univ., Gansu Province (China); Wang, Tie Shan [Lanzhou Univ., Gansu Province (China); Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-10-16

    Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In the intermediate energy regime, energetic particles simultaneously deposit a significant amount of energy to both electronic and atomic subsystems of silicon carbide (SiC). Here we show that defect evolution in SiC closely depends on the electronic-to-nuclear energy loss ratio (Se/Sn), nuclear stopping powers (dE/dxnucl), electronic stopping powers (dE/dxele), and the temporal and spatial coupling of electronic and atomic subsystem for energy dissipation. The integrated experiments and simulations reveal that: (1) increasing Se/Sn slows damage accumulation; (2) the transient temperatures during the ionization-induced thermal spike increase with dE/dxele, which causes efficient damage annealing along the ion trajectory; and (3) for more condensed displacement damage within the thermal spike, damage production is suppressed due to the coupled electronic and atomic dynamics. Ionization effects are expected to be more significant in materials with covalent/ionic bonding involving predominantly well-localized electrons. Here, insights into the complex electronic and atomic correlations may pave the way to better control and predict SiC response to extreme energy deposition

  14. Fabrication and characterization of joined silicon carbide cylindrical components for nuclear applications

    Science.gov (United States)

    Khalifa, H. E.; Deck, C. P.; Gutierrez, O.; Jacobsen, G. M.; Back, C. A.

    2015-02-01

    The use of silicon carbide (SiC) composites as structural materials in nuclear applications necessitates the development of a viable joining method. One critical application for nuclear-grade joining is the sealing of fuel within a cylindrical cladding. This paper demonstrates cylindrical joint feasibility using a low activation nuclear-grade joint material comprised entirely of β-SiC. While many papers have considered joining material, this paper takes into consideration the joint geometry and component form factor, as well as the material performance. Work focused specifically on characterizing the strength and permeability performance of joints between cylindrical SiC-SiC composites and monolithic SiC endplugs. The effects of environment and neutron irradiation were not evaluated in this study. Joint test specimens of different geometries were evaluated in their as-fabricated state, as well as after being subjected to thermal cycling and partial mechanical loading. A butted scarf geometry supplied the best combination of high strength and low permeability. A leak rate performance of 2 × 10-9 mbar l s-1 was maintained after thermal cycling and partial mechanical loading and sustained applied force of 3.4 kN, or an apparent strength of 77 MPa. This work shows that a cylindrical SiC-SiC composite tube sealed with a butted scarf endplug provides out-of-pile strength and permeability performance that meets light water reactor design requirements.

  15. Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

    Science.gov (United States)

    Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

    2011-06-10

    An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

  16. Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting.

    Science.gov (United States)

    Goel, Saurav; Luo, Xichun; Reuben, Robert L; Rashid, Waleed Bin

    2011-11-11

    Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear.

  17. Fast digitization and discrimination of prompt neutron and photon signals using a novel silicon carbide detector

    International Nuclear Information System (INIS)

    Brandon W. Blackburn; James T. Johnson; Scott M. Watson; David L. Chichester; James L. Jones; Frank H. Ruddy; John G. Seidel; Robert W. Flammang

    2007-01-01

    Current requirements of some Homeland Security active interrogation projects for the detection of Special Nuclear Material (SNM) necessitate the development of faster inspection and acquisition capabilities. In order to do so, fast detectors which can operate during and shortly after intense interrogation radiation flashes are being developed. Novel silicon carbide (SiC) semiconductor Schottky diodes have been utilized as robust neutron and photon detectors in both pulsed photon and pulsed neutron fields and are being integrated into active inspection environments to allow exploitation of both prompt and delayed emissions. These detectors have demonstrated the capability of detecting both photon and neutron events during intense photon flashes typical of an active inspection environment. Beyond the inherent insensitivity of SiC to gamma radiation, fast digitization and processing has demonstrated that pulse shape discrimination (PSD) in combination with amplitude discrimination can further suppress unwanted gamma signals and extract fast neutron signatures. Usable neutron signals have been extracted from mixed radiation fields where the background has exceeded the signals of interest by >1000:1

  18. Technical and cost advantages of silicon carbide telescopes for small-satellite imaging applications

    Science.gov (United States)

    Kasunic, Keith J.; Aikens, Dave; Szwabowski, Dean; Ragan, Chip; Tinker, Flemming

    2017-09-01

    Small satellites ("SmallSats") are a growing segment of the Earth imaging and remote sensing market. Designed to be relatively low cost and with performance tailored to specific end-use applications, they are driving changes in optical telescope assembly (OTA) requirements. OTAs implemented in silicon carbide (SiC) provide performance advantages for space applications but have been predominately limited to large programs. A new generation of lightweight and thermally-stable designs is becoming commercially available, expanding the application of SiC to small satellites. This paper reviews the cost and technical advantages of an OTA designed using SiC for small satellite platforms. Taking into account faceplate fabrication quilting and surface distortion after gravity release, an optimized open-back SiC design with a lightweighting of 70% for a 125-mm SmallSat-class primary mirror has an estimated mass area density of 2.8 kg/m2 and an aspect ratio of 40:1. In addition, the thermally-induced surface error of such optimized designs is estimated at λ/150 RMS per watt of absorbed power. Cost advantages of SiC include reductions in launch mass, thermal-management infrastructure, and manufacturing time based on allowable assembly tolerances.

  19. Evaluation of neutron irradiated near-stoichiometric silicon carbide fiber composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Katoh, Y.; Kohyama, A.; Bailey, J.L.; Vaughn, N.L.; Lowden, R.A.

    2000-01-01

    Composites have been fabricated by chemical vapor infiltration of silicon carbide (SiC) into SiC-based fiber preforms. Fibers were Ceramic Grade Nicalon TM , Hi-Nicalon TM and Hi-Nicalon TM Type-S. Results are presented for two parallel studies on the effects of neutron irradiation on these materials. In the first study, neutron irradiation induced changes in mechanical properties, as measured by bend testing, for Hi-Nicalon TM fiber materials of varied interphase structures is measured. Results indicate that both the Ceramic Grade Nicalon TM and Hi-Nicalon TM materials degrade substantially under irradiation, though the higher oxygen content Ceramic Grade fiber degrades more rapidly and more substantially. Of the three interfaces studied in the Hi-Nicalon TM system, the multilayer SiC is the most radiation resistant. At a dose of ∼1 dpa the mechanical property degradation of the Hi-Nicalon TM composite is consistent with a fiber densification-induced debonding. At a dose of 10 dpa the properties continue to degrade raising the question of degradation in the CVD SiC matrix as well. Low-dose results on the Hi-Nicalon TM Type-S fabricated material are encouraging, as they appear to not lose, and perhaps slightly increase, in ultimate bend strength. This result is consistent with the supposition that as the oxygen content in SiC-based fibers is reduced, the irradiation stability and hence composite performance under irradiation will improve

  20. Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

    Science.gov (United States)

    Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

  1. DC electrical conductivity of silicon carbide ceramics and composites for flow channel insert applications

    International Nuclear Information System (INIS)

    Katoh, Y.; Kondo, S.; Snead, L.L.

    2009-01-01

    High purity chemically vapor-deposited silicon carbide (SiC) and 2D continuous SiC fiber, chemically vapor-infiltrated SiC matrix composites with pyrocarbon interphases were examined. Specifically, temperature dependent (RT to 800 deg. C) electrical conductivity and the influence of neutron irradiation were measured. The influence of neutron irradiation on electrical properties appeared very strong for the SiC of this study, typically resulting in orders lower ambient conductivity and steeper temperature dependency of this conductivity. For the 2D composites, through-thickness (normal to the fiber axis') electrical conductivity was dominated by bypass conduction via interphase network at relatively low temperatures, whereas conduction through SiC constituents dominated at higher temperatures. Through-thickness electrical conductivity of neutron-irradiated 2D SiC composites with thin PyC interphase, currently envisioned for flow channel insert application, will likely in the order of 10 S/m at the appropriate operating temperature. Mechanisms of electrical conduction in the composites and irradiation-induced modification of electrical conductivity of the composites and their constituents are discussed.

  2. Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI

    Directory of Open Access Journals (Sweden)

    John E. Cunningham

    2012-04-01

    Full Text Available We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm2 at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics.

  3. Development of thin pixel detectors on epitaxial silicon for HEP experiments

    International Nuclear Information System (INIS)

    Boscardin, Maurizio; Calvo, Daniela; Giacomini, Gabriele; Wheadon, Richard; Ronchin, Sabina; Zorzi, Nicola

    2013-01-01

    The foreseen luminosity of the new experiments in High Energy Physics will require that the innermost layer of vertex detectors will be able to sustain fluencies up to 10 16 n eq /cm 2 . Moreover, in many experiments there is a demand for the minimization of the material budget of the detectors. Therefore, thin pixel devices fabricated on n-type silicon are a natural choice to fulfill these requirements due to their rad-hard performances and low active volume. We present an R and D activity aimed at developing a new thin hybrid pixel device in the framework of PANDA experiments. The detector of this new device is a p-on-n pixel sensor realized starting from epitaxial silicon wafers and back thinned up to 50–100 μm after process completion. We present the main technological steps and some electrical characterization on the fabricated devices before and after back thinning and after bump bonding to the front-end electronics

  4. Development of thin pixel detectors on epitaxial silicon for HEP experiments

    Energy Technology Data Exchange (ETDEWEB)

    Boscardin, Maurizio, E-mail: boscardi@fbk.eu [FBK, CMM, Via Sommarive 18, I-38123 Povo, Trento (Italy); Calvo, Daniela [INFN and Dipartimento di Fisica, Università di Torino, Via Pietro Giuria, I-10125 Torino (Italy); Giacomini, Gabriele [FBK, CMM, Via Sommarive 18, I-38123 Povo, Trento (Italy); Wheadon, Richard [INFN and Dipartimento di Fisica, Università di Torino, Via Pietro Giuria, I-10125 Torino (Italy); Ronchin, Sabina; Zorzi, Nicola [FBK, CMM, Via Sommarive 18, I-38123 Povo, Trento (Italy)

    2013-08-01

    The foreseen luminosity of the new experiments in High Energy Physics will require that the innermost layer of vertex detectors will be able to sustain fluencies up to 10{sup 16} n{sub eq}/cm{sup 2}. Moreover, in many experiments there is a demand for the minimization of the material budget of the detectors. Therefore, thin pixel devices fabricated on n-type silicon are a natural choice to fulfill these requirements due to their rad-hard performances and low active volume. We present an R and D activity aimed at developing a new thin hybrid pixel device in the framework of PANDA experiments. The detector of this new device is a p-on-n pixel sensor realized starting from epitaxial silicon wafers and back thinned up to 50–100 μm after process completion. We present the main technological steps and some electrical characterization on the fabricated devices before and after back thinning and after bump bonding to the front-end electronics.

  5. Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction

    International Nuclear Information System (INIS)

    Dadgar, A; Schulze, F; Wienecke, M; Gadanecz, A; Blaesing, J; Veit, P; Hempel, T; Diez, A; Christen, J; Krost, A

    2007-01-01

    GaN-on-silicon is a low-cost alternative to growth on sapphire or SiC. Today epitaxial growth is usually performed on Si(111), which has a threefold symmetry. The growth of single crystalline GaN on Si(001), the material of the complementary metal oxide semiconductor (CMOS) industry, is more difficult due to the fourfold symmetry of this Si surface leading to two differently aligned domains. We show that breaking the symmetry to achieve single crystalline growth can be performed, e.g. by off-oriented substrates to achieve single crystalline device quality GaN layers. Furthermore, an exotic Si orientation for GaN growth is Si(110), which we show is even better suited as compared to Si(111) for the growth of high quality GaN-on-silicon with a nearly threefold reduction in the full width at half maximum (FWHM) of the (1 1-bar 0 0)ω-scan. It is found that a twofold surface symmetry is in principal suitable for the growth of single crystalline GaN on Si

  6. Characterization of 150μm thick epitaxial silicon detectors from different producers after proton irradiation

    International Nuclear Information System (INIS)

    Hoedlmoser, H.; Moll, M.; Haerkoenen, J.; Kronberger, M.; Trummer, J.; Rodeghiero, P.

    2007-01-01

    Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150μm thick EPI silicon diodes irradiated with 24GeV/c protons up to a fluence of 3x10 15 p/cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV/IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences (5x10 13 p/cm 2 ) in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3x10 15 p/cm 2 for n-type devices whereas p-type diodes undergo type inversion from p- to n-type for fluences higher than ∼2x10 14 p/cm 2

  7. Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

    CERN Document Server

    Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

    2007-01-01

    Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

  8. Silicon carbide devices: more reliability for transmission and distribution systems; Dispositivos de SiC: mais confiabilidade para sistemas de transmissao e distribuicao

    Energy Technology Data Exchange (ETDEWEB)

    Basset, Roger; Ballad, John [Areva T and D Tecnology Centre (United Kingdom)

    2006-05-15

    The silicon carbide power semiconductors will represent an essential role in relation to electrical nets in the future. Counting with higher voltage levels, more rapid commutations and allowing higher temperatures then the current silicon semiconductors, they will result in power electronic equipment with lower dissipation and smaller amount of components, becoming more compacts and reliable.

  9. Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

    Science.gov (United States)

    Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

    2016-01-15

    The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

    International Nuclear Information System (INIS)

    McCallum, J.C.

    1999-01-01

    Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

  11. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  12. THE IMPACT OF THE METHOD OF UNDERLAY SURFACE PROCESSING ON THE DEVELOPMENT OF DEFECTS IN EPITAXIAL COMPOSITIONS IN THE COURSE OF SILICON PHOTO-TRANSDUCERS PRODUCTION

    Directory of Open Access Journals (Sweden)

    Zoya Nikonova

    2017-06-01

    Full Text Available For the production of silicon photo-transducers (PhT the acquisition of epitaxial compositions (EC with high resistivity of working layer. One of the main parameters characterizing the quality of EC is the density of dislocation and other structural defects. Great impact on the development of defects during epitaxial growth is produced by the quality of underlay preparation before that. Multiple research of relatively thin (less than 20-30 microns epitaxial layers demonstrated, that contamination or damages of underlay surface cause the development of defects of wrapping, counterparts, macroscopic protuberances in the growing layer. During inverted epitaxy there are no high requirements as for structural perfection of epitaxial layer as far as in PhT, produced on the basis of EC for which inverted silicon structures (ISS serve with the working layer of mono-crystal substrate. Therefore in inverted epitaxy it is the problem of the development in the course of defects growth not in epitaxial layer, but in underlay, that becomes the major one. The processes of the development of defects in underlay in the course of growing thick (approximately 300 microns epitaxial layer are scarcely researched by now. Scientists sustained the idea that when using dislocation-free underlays for growing in the working layer of ISS there are dislocations with the density of 103 sm-2 and more. Thus, investigation of the factors that determine the development of dislocations in underlay in the process of epitaxy, has now gained great practical value.

  13. Properties of forced convection experimental with silicon carbide based nano-fluids

    Science.gov (United States)

    Soanker, Abhinay

    With the advent of nanotechnology, many fields of Engineering and Science took a leap to the next level of advancements. The broad scope of nanotechnology initiated many studies of heat transfer and thermal engineering. Nano-fluids are one such technology and can be thought of as engineered colloidal fluids with nano-sized colloidal particles. There are different types of nano-fluids based on the colloidal particle and base fluids. Nano-fluids can primarily be categorized into metallic, ceramics, oxide, magnetic and carbon based. The present work is a part of investigation of the thermal and rheological properties of ceramic based nano-fluids. alpha-Silicon Carbide based nano-fluid with Ethylene Glycol and water mixture 50-50% volume concentration was used as the base fluid here. This work is divided into three parts; Theoretical modelling of effective thermal conductivity (ETC) of colloidal fluids, study of Thermal and Rheological properties of alpha-SiC nano-fluids, and determining the Heat Transfer properties of alpha-SiC nano-fluids. In the first part of this work, a theoretical model for effective thermal conductivity (ETC) of static based colloidal fluids was formulated based on the particle size, shape (spherical), thermal conductivity of base fluid and that of the colloidal particle, along with the particle distribution pattern in the fluid. A MATLAB program is generated to calculate the details of this model. The model is specifically derived for least and maximum ETC enhancement possible and thereby the lower and upper bounds was determined. In addition, ETC is also calculated for uniform colloidal distribution pattern. Effect of volume concentration on ETC was studied. No effect of particle size was observed for particle sizes below a certain value. Results of this model were compared with Wiener bounds and Hashin- Shtrikman bounds. The second part of this work is a study of thermal and rheological properties of alpha-Silicon Carbide based nano

  14. Evaluation of the mechanical performance of silicon carbide in TRISO fuel at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Rohbeck, Nadia, E-mail: nadia.rohbeck@manchester.ac.uk; Xiao, Ping, E-mail: p.xiao@manchester.ac.uk

    2016-09-15

    The HTR design envisions fuel operating temperatures of up to 1000 °C and in case of an accident even 1600 °C are conceivable. To ensure safety in all conditions a thorough understanding of the impact of an extreme temperature environment is necessary. This work assesses the high temperature mechanical performance of the silicon carbide (SiC) layer within the tristructural-isotropic (TRISO) fuel particle as it poses the main barrier against fission product release into the primary circuit. Therefore, simulated fuel was fabricated by fluidized bed chemical vapour deposition; varying the deposition conditions resulted in strongly differing SiC microstructures for the various samples. Subsequently the TRISO particles were annealed in inert atmosphere at temperatures ranging from 1600 °C up to 2200 °C. Scanning electron microscopy and Raman spectroscopy showed that strong disintegration of the SiC layer occurred from 2100 °C onwards, but initial signs of porosity formation were visible already at 1800 °C. Still, the elastic modulus and hardness as measured by nanoindentation were hardly impaired. After annealing stoichiometric SiC coatings showed a reduction in fracture strength as determined by a modified crush test, however the actual annealing temperature from 1600 °C to 2000 °C had no measureable effect. Furthermore, a technique was developed to measure the elastic modulus and hardness in situ up to 500 °C using a high temperature nanoindentation facility. This approach allows conducting tests while the specimen and indenter tip are heated to a specific measurement temperature, thus obtaining reliable values for the temperature dependent mechanical properties of the material. For the SiC layer in TRISO particles it was found that the elastic modulus decreased slightly from room temperature up to 500 °C, whereas the hardness was reduced more severely to approximately half of its ambient temperature value.

  15. High-temperature stability of laser-joined silicon carbide components

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, Marion, E-mail: marion.herrmann@tu-dresden.de; Lippmann, Wolfgang; Hurtado, Antonio

    2013-11-15

    Silicon carbide is recommended for applications in energy technology due to its good high-temperature corrosion resistance, mechanical durability, and abrasion resistance. The prerequisite for use is often the availability of suitable technologies for joining or sealing the components. A laser-induced process using fillers and local heating of the components represents a possible low-cost option. Investigations in which yttrium aluminosilicate glass was used for laser-induced brazing of SiC components of varying geometry are presented. A four-point bending strength of 112 MPa was found for these joints. In burst tests, laser-joined components were found to withstand internal pressures of up to 54 MPa. Helium leak tests yielded leak rates of less than 10{sup –8} mbar l s{sup −1}, even after 300 h at 900 °C. In contrast, the assemblies showed an increased leak rate after annealing at 1050 °C. The short process time of the laser technique – in the range of a few seconds to a few minutes – results in high temperature gradients and transients. SEM analysis showed that the filler in the seam predominantly solidifies in a glassy state. Crystallization occurred during later thermal loading of the joined components, with chemical equilibrium being established. Differences in seam structures yielded from different cooling rates in the laser process could not be equalized by annealing. The results demonstrated the long-term stability of laser-brazed SiC assemblies to temperatures in the range of glass transformation (900 °C) of the yttrium aluminosilicate filler. In technological investigations, the suitability of the laser joining technique for sealing of SiC components with a geometry approximating that of a fuel element sleeve pin (pin) in a gas-cooled fast reactor was proven.

  16. Limited inflammatory response in rats after acute exposure to a silicon carbide nanoaerosol

    Energy Technology Data Exchange (ETDEWEB)

    Laloy, J., E-mail: julie.laloy@unamur.be [University of Namur (UNamur), Department of Pharmacy, Namur Nanosafety Centre (NNC), Namur Research Institute for Life Sciences NARILIS (Belgium); Lozano, O. [University of Namur (UNamur), Research Centre in Physics of Matter and Radiation (PMR), Namur Nanosafety Centre NNC, Namur Research Institute for Life Sciences NARILIS (Belgium); Alpan, L.; Masereel, B. [University of Namur (UNamur), Department of Pharmacy, Namur Nanosafety Centre (NNC), Namur Research Institute for Life Sciences NARILIS (Belgium); Toussaint, O. [University of Namur (UNamur), Laboratory of Cellular Biochemistry and Biology (URBC), Namur Nanosafety Centre NNC, Namur Research Institute for Life Sciences NARILIS (Belgium); Dogné, J. M. [University of Namur (UNamur), Department of Pharmacy, Namur Nanosafety Centre (NNC), Namur Research Institute for Life Sciences NARILIS (Belgium); Lucas, S. [University of Namur (UNamur), Research Centre in Physics of Matter and Radiation (PMR), Namur Nanosafety Centre NNC, Namur Research Institute for Life Sciences NARILIS (Belgium)

    2015-08-15

    Inhalation represents the major route of human exposure to manufactured nanomaterials (NMs). Assessments are needed about the potential risks of NMs from inhalation on different tissues and organs, especially the respiratory tract. The aim of this limited study is to determine the potential acute pulmonary toxicity in rats exposed to a dry nanoaerosol of silicon carbide (SiC) nanoparticles (NPs) in a whole-body exposure (WBE) model. The SiC nanoaerosol is composed of a bimodal size distribution of 92.8 and 480 nm. The exposure concentration was 4.91 mg/L, close to the highest recommended concentration of 5 mg/L by the Organisation for Economic Co-operation and Development. Rats were exposed for 6 h to a stable and reproducible SiC nanoaerosol under real-time measurement conditions. A control group was exposed to the filtered air used to create the nanoaerosol. Animals were sacrificed immediately, 24 or 72 h after exposure. The bronchoalveolar lavage fluid from rat lungs was recovered. Macrophages filled with SiC NPs were observed in the rat lungs. The greatest load of SiC and macrophages filled with SiC were observed on the rat lungs sacrificed 24 h after acute exposure. A limited acute inflammatory response was found up to 24 h after exposure characterized by a lactate dehydrogenase and total protein increase or presence of inflammatory cells in pulmonary lavage. For this study a WBE model has been developed, it allows the simultaneous exposure of six rats to a nanoaerosol and six rats to clean-filtered air. The nanoaerosol was generated using a rotating brush system (RBG-1000) and analyzed with an electrical low pressure impactor in real time.

  17. Linear electro-optical behavior of hybrid nanocomposites based on silicon carbide nanocrystals and polymer matrices

    Science.gov (United States)

    Bouclé, J.; Kassiba, A.; Makowska-Janusik, M.; Herlin-Boime, N.; Reynaud, C.; Desert, A.; Emery, J.; Bulou, A.; Sanetra, J.; Pud, A. A.; Kodjikian, S.

    2006-11-01

    An electro-optical activity has been recently reported for hybrid nanocomposite thin films where inorganic silicon carbide nanocrystals (ncSiC) are incorporated into polymer matrices. The role of the interface SiC polymer is suggested as the origin of the observed second order nonlinear optical susceptibility in the hybrid materials based on poly-(methylmethacrylate) (PMMA) or poly-( N -vinylcarbazole) matrices. In this work, we report an analysis of the electro-optical response of this hybrid system as a function of the ncSiC content and surface state in order to precise the interface effect in the observed phenomenon. Two specific ncSiC samples with similar morphology and different surface states are incorporated in the PMMA matrix. The effective Pockels parameters of the corresponding hybrid nanocomposites have been estimated up to 7.59±0.74pm/V ( 1wt.% of ncSiC in the matrix). The interfacial region ncSiC polymer is found to play the main role in the observed effect. Particularly, the electronic defects on the ncSiC nanocrystal surface modify the interfacial electrical interactions between the two components. The results are interpreted and discussed on the basis of the strong influence of these active centers in the interfacial region at the nanoscale, which are found to monitor the local hyperpolarizabilities and the macroscopic nonlinear optical susceptibilities. This approach allows us to complete the description and understanding of the electro-optical response in the hybrid SiC /polymer systems.

  18. Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

    Science.gov (United States)

    Khorsandi, Behrooz

    There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

  19. Abundances of presolar silicon carbide grains in primitive meteorites determined by NanoSIMS

    Science.gov (United States)

    Davidson, Jemma; Busemann, Henner; Nittler, Larry R.; Alexander, Conel M. O.'D.; Orthous-Daunay, François-Régis; Franchi, Ian A.; Hoppe, Peter

    2014-08-01

    It has been suggested that the matrices of all chondrites are dominated by a common material with Ivuna-like (CI) abundances of volatiles, presolar grains and insoluble organic matter (IOM) (e.g., Alexander, 2005). However, matrix-normalized abundances of presolar silicon carbide (SiC) grains estimated from their noble gas components show significant variations in even the most primitive chondrites (Huss and Lewis, 1995; Huss et al., 2003), in contradiction to there being a common chondrite matrix material. Here we report presolar SiC abundances determined by NanoSIMS raster ion imaging of IOM extracted from primitive members of different meteorite groups. We show that presolar SiC abundance determinations are comparable between NanoSIMS instruments located at three different institutes, between residues prepared by different demineralization techniques, and between microtomed and non-microtomed samples. Our derived SiC abundances in CR chondrites are comparable to those found in the CI chondrites (∼30 ppm) and are much higher than previously determined by noble gas analyses. The revised higher CR SiC abundances are consistent with the CRs being amongst the most primitive chondrites in terms of the isotopic compositions and disordered nature of their organic matter. Similar abundances between CR1, CR2, and CR3 chondrites indicate aqueous alteration on the CR chondrite parent body has not progressively destroyed SiC grains in them. A low SiC abundance for the reduced CV3 RBT 04133 can be explained by parent body thermal metamorphism at an estimated temperature of ∼440 °C. Minor differences between primitive members of other meteorite classes, which did not experience such high temperatures, may be explained by prolonged oxidation at lower temperatures under which SiC grains formed outer layers of SiO2 that were not thermodynamically stable, leading to progressive degassing/destruction of SiC.

  20. Surface modification of silicon carbide with silane coupling agent and hexadecyl iodiele

    Energy Technology Data Exchange (ETDEWEB)

    Shang, Xujing, E-mail: shangxujing@tju.edu.cn; Zhu, Yumei, E-mail: zymtju@163.com; Li, Zhihong, E-mail: lzhtju@163.com

    2017-02-01

    Highlights: • A novel universal method was performed to enhance hydrophobicity of SiC powder. • The modification effects of KH550 and KH590 were compared and the optimum reaction parameters were established. • Hexadecyl iodiele was successfully grafted on the surface of SiC-KH590 powder. • Surface changes on SiC powder before and after modification were analyzed via FTIR, XPS, SEM. • The related reaction mechanisms were discussed. - Abstract: In this paper, two kinds of silane coupling agents, namely 3-aminopropyl triethoxysilane (KH550) and 3-mercaptopropyl trimethoxysilane (KH590), were adopted as preliminary modifiers to improve the hydrophobic surface properties of silicon carbide (SiC) powder for the first step. The factors that influence the modification effects were investigated by measuring the contact angle. The results showed that KH590 has a better effect than KH550 for the hydrophobic modification of SiC, and the contact angle improved most after SiC powder was reacted with 0.3 g KH590 at 75 °C in aqueous/alcohol solution for 4 h. On account of further enhancement of hydrophobicity, the study was focused on utilizing nucleophilic substitution between KH590 and hexadecyl iodiele to extend the length of alkyl chain. Compared with using KH590 alone, SiC powder modified by KH590 and hexadecyl iodiele showed better water resistance with an increase of contact angle from 106.8° to 127.5°. The Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectra (XPS) as well as X-ray diffraction (XRD) analysis results showed that KH550/KH590 and hexadecyl iodiele can be covalently bonded to the surface of SiC powder without altering its crystal configuration. This methodology may provide a new way of the modification of inorganic materials in further.

  1. Mullite-based coating on silicon carbide refractory obtained from PMSQ [poly(methylsilsesquioxane)

    International Nuclear Information System (INIS)

    Machado, Glauson Aparecido Ferreira

    2017-01-01

    Silicon carbide (SiC) presents low thermal expansion, high strength and thermal conductivity. For this reason it is used as kiln furniture for materials sintering. On the other hand, SiC degrades at high temperature under aggressive atmosphere. The use of protective coatings can avoid the right exposition of SiC surface to the furnace atmosphere. Mullite can be a suitable material as protective coating because of its high corrosion resistance and thermal expansion coefficient matching that of SiC (4,7 x 10 -6 /°C e 5,3 x 10 -6 /°C, respectively). In the present work a mullite coating obtained from ceramic precursor polymer and aluminium powder was studied to be applied over SiC refractories. Compositions were prepared with 10, 20, 30 and 50% (vol.) of aluminium powder added to the polymer. They were used aluminium powders with different distributions sizes These compositions were heat treated at different thermal cycles to determine a suitable condition to obtain a high mullite content. The composition with 20% of the smaller particle size Al powder was selected and used to be applied as a suspension over SiC refractory. The applied suspension, after dried, crosslinked and heat treated, formed a mullite coating over SiC refractory. Cycles of thermal shock were performed in coated and uncoated SiC samples to compare each other. They were carried out 26 cycles of thermal shock, in the following conditions: 600°C/30 min. and air cooling to room temperature. After each thermal shock, samples were analysed by mean of optical and electron microscopy, elastic modulus was also determined. After thermal shock cycles the coating presented good adhesion and no significant damage were observed. (author)

  2. Separation of silicon carbide-coated fertile and fissile particles by gas classification

    International Nuclear Information System (INIS)

    Vaughen, V.C.A.

    1976-07-01

    The separation of 235 U and 233 U in the reprocessing of HTGR fuels is a key feature of the feed-breed fuel cycle concept. This is attained in the Fort St. Vrain (FSV) reactor by coating the fissile (Th- 235 U) particles and the fertile (Th- 233 U) particles separately with silicon carbide (SiC) layers to contain the fission products and to protect the kernels from burning in the head-end reprocessing steps. Pneumatic (gas) classification based on size and density differences is the reference process for separating the SiC-coated particles into fissile and fertile streams for subsequent handling. Terminal velocities have been calculated for the +- 2 sigma ranges of particle sizes and densities for ''Fissile B''--''Fertile A'' particles used in the FSV reactor. Because of overlapping particle fractions, a continuous pneumatic separator appears infeasible; however, a batch separation process can be envisioned. Changing the gas from air to CO 2 and/or the temperature to 300 0 C results in less than 10 percent change in calculated terminal velocities. Recently reported work in gas classification is discussed in light of the theoretical calculations. The pneumatic separation of fissile and fertile particles needs more study, specifically with regard to (1) measuring the recoveries and separation efficiencies of actual fissile and fertile fractions in the tests of the pneumatic classifiers; and (2) improving the contactor design or flowsheet to avoid apparent flow separation or flooding problems at the feed point when using the feed rates required for the pilot plant

  3. Evaluation of the Mechanical Performance of Silicon Carbide in TRISO Fuel at High Temperatures

    International Nuclear Information System (INIS)

    Rohbeck, N.; Xiao, P.

    2014-01-01

    The HTR design envisions fuel operating temperatures of up to 1000°C and in case of an accident even 1600°C are conceivable. To ensure safety in all conditions a thorough understanding of the impact of an extreme temperature environment is necessary. This work assesses the high temperature mechanical performance of the silicon carbide (SiC) layer within the tristructural-isotropic (TRISO) fuel particle as it poses the main barrier against fission product release into the primary circuit. Therefore simulated fuel was fabricated by fluidized bed chemical vapour deposition; varying the deposition conditions resulted in strongly differing SiC microstructures for the various samples. Subsequently the TRISO particles were annealed in inert atmosphere at temperatures ranging from 1600°C up to 2200°C. Scanning electron microscopy and Raman spectroscopy showed that strong disintegration of the SiC layer occurred from 2100°C onwards, but initial signs of porosity formation were visible already at 1800°C. Still, the elastic modulus and hardness as measured by nanoindentation were hardly impaired. After annealing stoichiometric SiC coatings showed a reduction in fracture strength as determined by a modified crush test, however the actual annealing temperature from 1600°C to 2000°C had no measureable effect. Furthermore, a technique was developed to measure the elastic modulus and hardness in-situ up to 500°C using a high temperature nanoindentation facility. This approach allows conducting numerous tests on small sample volumes and thus promises to improve our knowledge of irradiation effects on the mechanical properties. For the SiC layer in TRISO particles it was found that the elastic modulus decreased slightly from room temperature up to 500°C, whereas the hardness was reduced more severely to approximately half of its ambient temperature value. (author)

  4. Evaluation of the mechanical performance of silicon carbide in TRISO fuel at high temperatures

    International Nuclear Information System (INIS)

    Rohbeck, Nadia; Xiao, Ping

    2016-01-01

    The HTR design envisions fuel operating temperatures of up to 1000 °C and in case of an accident even 1600 °C are conceivable. To ensure safety in all conditions a thorough understanding of the impact of an extreme temperature environment is necessary. This work assesses the high temperature mechanical performance of the silicon carbide (SiC) layer within the tristructural-isotropic (TRISO) fuel particle as it poses the main barrier against fission product release into the primary circuit. Therefore, simulated fuel was fabricated by fluidized bed chemical vapour deposition; varying the deposition conditions resulted in strongly differing SiC microstructures for the various samples. Subsequently the TRISO particles were annealed in inert atmosphere at temperatures ranging from 1600 °C up to 2200 °C. Scanning electron microscopy and Raman spectroscopy showed that strong disintegration of the SiC layer occurred from 2100 °C onwards, but initial signs of porosity formation were visible already at 1800 °C. Still, the elastic modulus and hardness as measured by nanoindentation were hardly impaired. After annealing stoichiometric SiC coatings showed a reduction in fracture strength as determined by a modified crush test, however the actual annealing temperature from 1600 °C to 2000 °C had no measureable effect. Furthermore, a technique was developed to measure the elastic modulus and hardness in situ up to 500 °C using a high temperature nanoindentation facility. This approach allows conducting tests while the specimen and indenter tip are heated to a specific measurement temperature, thus obtaining reliable values for the temperature dependent mechanical properties of the material. For the SiC layer in TRISO particles it was found that the elastic modulus decreased slightly from room temperature up to 500 °C, whereas the hardness was reduced more severely to approximately half of its ambient temperature value.

  5. Silicon Carbide Found in K/T Boundary Layer: Implication for Asteroid Collision with Planet Earth

    Science.gov (United States)

    Leung, I. S.; Tsao, C.

    2016-12-01

    An event at the end of the Cretaceous Period 65.5 m.y. ago produced an impact structure 300 km in diameter designated the Chicxulub Crater, located partly on the Yucatan Peninsula and the Caribbian Sea floor. Mass extinction following that event killed 75% of Earth's living species, including dinosaurs. To this date, the killer space object has not been identified, but it was frequently conjectured to be a comet or an asteroid. The goal of our study was to search for evidence which might implicate the culprit. The Chicxulub impact caused extensive wildfires producing Ir-rich dust fallouts in worldwide localities, among which the least contaminated by land-derived sediments may be situated on deep ocean floors. Our study is based on a sample of pelagic clay from the giant piston core LL44-GPC3 taken from the Pacific Plate, north of the Hawaiian Islands (Woods Hole Oceanographic Institution). The 1-cm thick Ir-rich layer was located at a downcore depth of 1055-1056 cm below sea floor. From a 5 cubic cm sample provided by Jim Broda, we found 29 impact glass spherules and 4 silicon carbide (SiC) crystals. SiC has been reported in carbonaceous meteorites. Our findings of SiC in the K/T boundary layer seem to implicate that an asteroid having composition akin to that of carbonaceous chondrites might have been the killer projectile during the Chicxulub event. However, impact by a comet cannot be ruled out, since the mineralogy of cometary dust is as yet unknown.

  6. Dependence of Fracture Toughness on Crystallographic Orientation in Single-Crystalline Cubic (β) Silicon Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Pharr, M.; Katoh, Y.; Bei, H.

    2006-01-01

    Along with other desirable properties, the ability of silicon carbide (SiC) to retain high strength after elevated temperature exposures to neutron irradiation renders it potentially applicable in fusion and advanced fission reactors. However, properties of the material such as room temperature fracture toughness must be thoroughly characterized prior to such practical applications. The objective of this work is to investigate the dependence of fracture toughness on crystallographic orientation for single-crystalline β-SiC. X-ray diffraction was first performed on the samples to determine the orientation of the crystal. Nanoindentation was used to determine a hardness of 39.1 and 35.2 GPa and elastic modulus of 474 and 446 GPa for the single-crystalline and polycrystalline samples, respectively. Additionally, crack lengths and indentation diagonals were measured via a Vickers micro-hardness indenter under a load of 100 gf for different crystallographic orientations with indentation diagonals aligned along fundamental cleavage planes. Upon examination of propagation direction of cracks, the cracks usually did not initiate and propagate from the corners of the indentation where the stresses are concentrated but instead from the indentation sides. Such cracks clearly moved along the {1 1 0} family of planes (previously determined to be preferred cleavage plane), demonstrating that the fracture toughness of SiC is comparatively so much lower along this set of planes that the lower energy required to cleave along this plane overpowers the stress-concentration at indentation corners. Additionally, fracture toughness in the <1 1 0> direction was 1.84 MPa·m1/2, lower than the 3.46 MPa·m1/2 measured for polycrystalline SiC (which can serve as an average of a spectrum of orientations), further demonstrating that single-crystalline β-SiC has a strong fracture toughness anisotropy.

  7. Edge reconstruction effect in pristine and H-passivated zigzag silicon carbide nanoribbons.

    Science.gov (United States)

    Lou, Ping

    2011-10-14

    The edge reconstruction effect of the zigzag silicon carbide nanoribbons (zz SiC NRs) to a stable line of alternatively fused seven and five membered rings without and with H passivation have been studied using first principles density functional theory (DFT). The both side's edges of the pristine SiC are respectively terminated by Si and C atoms and are called the Si-edge and the C-edge, respectively. In the un-passivated systems, the C-edge reconstructed (Crc) could effectively lower the edge energy of the system, while the Si-edge reconstructed (Sirc) could raise the edge energy of the system. Thus, the Crc edge is the best edge for the edge reconstruction of the system, while the both edge reconstructed (brc) system is the metastability. Moreover, the brc system has a nonmagnetic metallic state, whereas the Crc system, as well as Sirc system, has a ferromagnetic metallic state. The edge reconstructed destroys the magnetic moment of the corresponding edge atoms. The magnetic moment arises from the unreconstructed zigzag edges. The pristine zz edge system has a ferrimagnetic metallic state. However, in the H-passivated systems, the unreconstructed zigzag edge (zz-H) is the best edge. The Crc-H system is the metastability. The Sirc-H system has only slightly higher energy than the Crc-H system, whereas the brc-H system of the pristine SiC NR has the highest edge energy. Thus, the H passivation would prevent the occurrence of edge reconstruction. Moreover, H passivation induces a metal-semiconductor transition in the zz and brc SiC NRs. Additionally, except for brc-H system which has non-magnetic semiconducting state, the zz-H, Crc-H, and Sirc-H systems have the magnetic state.

  8. Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pallon, J., E-mail: jan.pallon@nuclear.lu.se [Division of Nuclear Physics, Physics Department, Lund University, Box 118, SE-221 00 Lund (Sweden); Syväjärvi, M. [Linköping University, Department of Physics, Chemistry and Biology, SE-58183 Linköping (Sweden); Graphensic AB, Teknikringen 1F, SE-58330 Linköping (Sweden); Wang, Q. [Sensor System, ACREO Swedish ICT AB, Box 1070, SE-164 25 Kista (Sweden); Yakimova, R.; Iakimov, T. [Linköping University, Department of Physics, Chemistry and Biology, SE-58183 Linköping (Sweden); Graphensic AB, Teknikringen 1F, SE-58330 Linköping (Sweden); Elfman, M.; Kristiansson, P.; Nilsson, E.J.C.; Ros, L. [Division of Nuclear Physics, Physics Department, Lund University, Box 118, SE-221 00 Lund (Sweden)

    2016-03-15

    Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

  9. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

    Science.gov (United States)

    Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Assessment of Silicon Carbide Composites for Advanced Salt-Cooled Reactors

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [ORNL; Wilson, Dane F [ORNL; Forsberg, Charles W [ORNL

    2007-09-01

    The Advanced High-Temperature Reactor (AHTR) is a new reactor concept that uses a liquid fluoride salt coolant and a solid high-temperature fuel. Several alternative fuel types are being considered for this reactor. One set of fuel options is the use of pin-type fuel assemblies with silicon carbide (SiC) cladding. This report provides (1) an initial viability assessment of using SiC as fuel cladding and other in-core components of the AHTR, (2) the current status of SiC technology, and (3) recommendations on the path forward. Based on the analysis of requirements, continuous SiC fiber-reinforced, chemically vapor-infiltrated SiC matrix (CVI SiC/SiC) composites are recommended as the primary option for further study on AHTR fuel cladding among various industrially available forms of SiC. Critical feasibility issues for the SiC-based AHTR fuel cladding are identified to be (1) corrosion of SiC in the candidate liquid salts, (2) high dose neutron radiation effects, (3) static fatigue failure of SiC/SiC, (4) long-term radiation effects including irradiation creep and radiation-enhanced static fatigue, and (5) fabrication technology of hermetic wall and sealing end caps. Considering the results of the issues analysis and the prospects of ongoing SiC research and development in other nuclear programs, recommendations on the path forward is provided in the order or priority as: (1) thermodynamic analysis and experimental examination of SiC corrosion in the candidate liquid salts, (2) assessment of long-term mechanical integrity issues using prototypical component sections, and (3) assessment of high dose radiation effects relevant to the anticipated operating condition.

  11. Toxicity of silicon carbide nanowires to sediment-dwelling invertebrates in water or sediment exposures

    Science.gov (United States)

    Mwangi, Joseph N.; Wang, Ning; Ritts, Andrew; Kunz, James L.; Ingersoll, Christopher G.; Li, Hao; Deng, Baolin

    2011-01-01

    Silicon carbide nanowires (SiCNW) are insoluble in water. When released into an aquatic environment, SiCNW would likely accumulate in sediment. The objective of this study was to assess the toxicity of SiCNW to four freshwater sediment-dwelling organisms: amphipods (Hyalella azteca), midges (Chironomus dilutus), oligochaetes (Lumbriculus variegatus), and mussels (Lampsilis siliquoidea). Amphipods were exposed to either sonicated or nonsonicated SiCNW in water (1.0 g/L) for 48 h. Midges, mussels, and oligochaetes were exposed only to sonicated SiCNW in water for 96 h. In addition, amphipods were exposed to sonicated SiCNW in whole sediment for 10 d (44% SiCNW on dry wt basis). Mean 48-h survival of amphipods exposed to nonsonicated SiCNW in water was not significantly different from the control, whereas mean survival of amphipods exposed to sonicated SiCNW in two 48-h exposures (0 or 15% survival) was significantly different from the control (90 or 98% survival). In contrast, no effect of sonicated SiCNW was observed on survival of midges, mussels, or oligochaetes. Survival of amphipods was not significantly reduced in 10-d exposures to sonicated SiCNW either mixed in the sediment or layered on the sediment surface. However, significant reduction in amphipod biomass was observed with the SiCNW either mixed in sediment or layered on the sediment surface, and the reduction was more pronounced for SiCNW layered on the sediment. These results indicated that, under the experimental conditions, nonsonicated SiCNW in water were not acutely toxic to amphipods, sonicated SiCNW in water were acutely toxic to the amphipods, but not to other organisms tested, and sonicated SiCNW in sediment affected the growth but not the survival of amphipods.

  12. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  13. Epitaxial silicon detectors for particle tracking-Radiation tolerance at extreme hadron fluences

    International Nuclear Information System (INIS)

    Lindstroem, Gunnar; Dolenc, Irena; Fretwurst, Eckhart; Hoenniger, Frank; Kramberger, Gregor; Moll, Michael; Nossarzewska, Elsbieta; Pintilie, Ioana; Roeder, Ralf

    2006-01-01

    Diodes processed on n-type epitaxial silicon with a thickness of 25, 50 and 75 μm had been irradiated with reactor neutrons and high-energy protons (24 GeV/c) up to integrated fluences of Φ eq =10 16 cm -2 . Systematic experiments on radiation-induced damage effects revealed the following results: in contrast to standard and oxygen-enriched float zone (FZ) silicon devices no space charge sign inversion was observed after irradiation. It is shown that the radiation-generated concentration of deep acceptors, dominating the behavior of n-type FZ diodes, is compensated by creation of shallow donors. Thus a positive space charge is maintained throughout the irradiation up to the highest fluence and even during prolonged elevated-temperature annealing cycles. Defect analysis studies using thermally stimulated current measurements attribute the effect to a damage-induced shallow donor at E C -0.23 eV. It is argued that, as in the case of thermal donors, oxygen dimers, out diffusing from the Cz substrate during the diode processing, are responsible precursers. Results from extensive annealing experiments at elevated temperatures are verified by comparison with prolonged room-temperature annealing. These results showed that in contrast to FZ detectors, which always have to be cooled, room-temperature storage during beam off periods of future elementary particle physics experiments would even be beneficial for n-type epi-silicon detectors. A dedicated experiment at CERN-PS had successfully proven this expectation. It was verified, that in such a scenario the depletion voltage for the epi-detector could always be kept at a moderate level throughout the full S-LHC operation (foreseen upgrade of the large hadron collider). Practically no difference with respect to FZ-silicon devices was found in the damage-induced bulk generation current. The charge trapping measured with 90 Sr electrons (mip's) is also almost identical to what was expected. A charge collection efficiency of

  14. Epitaxial silicon detectors for particle tracking-Radiation tolerance at extreme hadron fluences

    Energy Technology Data Exchange (ETDEWEB)

    Lindstroem, Gunnar [Institute for Experimental Physics, University of Hamburg, Hamburg, 22761 (Germany)]. E-mail: gunnar.lindstroem@desy.de; Dolenc, Irena [Jozef Stefan Institute, University of Ljubljana, Ljubljana, 100 (Slovenia); Fretwurst, Eckhart [Institute for Experimental Physics, University of Hamburg, Hamburg, 22761 (Germany); Hoenniger, Frank [Institute for Experimental Physics, University of Hamburg, Hamburg, 22761 (Germany); Kramberger, Gregor [Jozef Stefan Institute, University of Ljubljana, Ljubljana, 100 (Slovenia); Moll, Michael [CERN, Geneva, 1211 (Switzerland); Nossarzewska, Elsbieta [ITME, Institute for Electronocs Materials Technology, Warsaw, 01919 (Poland); Pintilie, Ioana [National Institute of Materials Physics, Bucharest, 077125 (Romania); Roeder, Ralf [CiS Institute for Microsensors gGmbH, Erfurt, 99099 (Germany)

    2006-11-30

    Diodes processed on n-type epitaxial silicon with a thickness of 25, 50 and 75 {mu}m had been irradiated with reactor neutrons and high-energy protons (24 GeV/c) up to integrated fluences of {phi} {sub eq}=10{sup 16} cm{sup -2}. Systematic experiments on radiation-induced damage effects revealed the following results: in contrast to standard and oxygen-enriched float zone (FZ) silicon devices no space charge sign inversion was observed after irradiation. It is shown that the radiation-generated concentration of deep acceptors, dominating the behavior of n-type FZ diodes, is compensated by creation of shallow donors. Thus a positive space charge is maintained throughout the irradiation up to the highest fluence and even during prolonged elevated-temperature annealing cycles. Defect analysis studies using thermally stimulated current measurements attribute the effect to a damage-induced shallow donor at E {sub C}-0.23 eV. It is argued that, as in the case of thermal donors, oxygen dimers, out diffusing from the Cz substrate during the diode processing, are responsible precursers. Results from extensive annealing experiments at elevated temperatures are verified by comparison with prolonged room-temperature annealing. These results showed that in contrast to FZ detectors, which always have to be cooled, room-temperature storage during beam off periods of future elementary particle physics experiments would even be beneficial for n-type epi-silicon detectors. A dedicated experiment at CERN-PS had successfully proven this expectation. It was verified, that in such a scenario the depletion voltage for the epi-detector could always be kept at a moderate level throughout the full S-LHC operation (foreseen upgrade of the large hadron collider). Practically no difference with respect to FZ-silicon devices was found in the damage-induced bulk generation current. The charge trapping measured with {sup 90}Sr electrons (mip's) is also almost identical to what was expected

  15. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    Directory of Open Access Journals (Sweden)

    Sofiane Khachroumi

    2010-01-01

    Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

  16. Analysis of temperature profiles and the mechanism of silicon substrate plastic deformation under epitaxial growth

    International Nuclear Information System (INIS)

    Mirkurbanov, H.A.; Sazhnev, S.V.; Timofeev, V.N.

    2004-01-01

    Full text: Thermal treatment of silicon wafers holds one of the major place in the manufacturing of semi-conductor devices. Thermal treatment includes wafer annealing, thermal oxidation, epitaxial growing etc. Quality of wafers in the high-temperature processes (900-1200 deg C) is estimated by the density of structural defects, including areas of plastic deformation, which are shown as the slip lines appearance. Such areas amount to 50-60 % of total wafer surface. The plastic deformation is caused by the thermal stresses. Experimental and theoretical researches allowed to determine thermal balance and to construct a temperature profiles throughout the plate surface. Thermal stresses are caused by temperature drop along the radius of a wafer and at the basic peripheral ring. The threshold temperature drop between center f a wafer and its peripherals (ΔT) for slip lines appearance, amounts to 15-17 deg. C. At the operating temperature of 900-1200 deg. C and ΔT>20 deg. C, the stresses reach the silicon yield point. According to the results of the researches of structure and stress profiles in a wafer, the mechanism of slip lines formation has been constructed. A source of dislocations is the rear broken layer of thickness 8-10 microns, formed after polishing. The micro-fissures with a density 10 5 -10 6 cm -2 are the sources of dislocations. Dislocations move on a surface of a wafer into a slip plane (111). On a wafer surface with orientation (111) it is possible to allocate zones where the tangential stress vector is most favorably directed with respect to a slip plane leaving on a surface, i.e. the shift stresses are maximal in the slip plane. The way to eliminate plastic deformation is to lower the temperature drop to a level of <15 deg. C and elimination of the broken layer in wafer

  17. Charge collection and space charge distribution in neutron-irradiated epitaxial silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Poehlsen, Thomas

    2010-04-15

    In this work epitaxial n-type silicon diodes with a thickness of 100 {mu}m and 150 {mu}m are investigated. After neutron irradiation with fluences between 10{sup 14} cm{sup -2} and 4 x 10{sup 15} cm{sup -2} annealing studies were performed. CV-IV curves were taken and the depletion voltage was determined for different annealing times. All investigated diodes with neutron fluences greater than 2 x 10{sup 14} cm{sup -2} showed type inversion due to irradiation. Measurements with the transient current technique (TCT) using a pulsed laser were performed to investigate charge collection effects for temperatures of -40 C, -10 C and 20 C. The charge correction method was used to determine the effective trapping time {tau}{sub eff}. Inconsistencies of the results could be explained by assuming field dependent trapping times. A simulation of charge collection could be used to determine the field dependent trapping time {tau}{sub eff}(E) and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described. Indications of charge multiplication were seen in the irradiated 100 {mu}m thick diodes for all investigated fluences at voltages above 800 V. The space charge distribution extracted from TCT measurements was compared to the results of the CV measurements and showed good agreement. (orig.)

  18. Charge collection and space charge distribution in neutron-irradiated epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Poehlsen, Thomas

    2010-04-01

    In this work epitaxial n-type silicon diodes with a thickness of 100 μm and 150 μm are investigated. After neutron irradiation with fluences between 10 14 cm -2 and 4 x 10 15 cm -2 annealing studies were performed. CV-IV curves were taken and the depletion voltage was determined for different annealing times. All investigated diodes with neutron fluences greater than 2 x 10 14 cm -2 showed type inversion due to irradiation. Measurements with the transient current technique (TCT) using a pulsed laser were performed to investigate charge collection effects for temperatures of -40 C, -10 C and 20 C. The charge correction method was used to determine the effective trapping time τ eff . Inconsistencies of the results could be explained by assuming field dependent trapping times. A simulation of charge collection could be used to determine the field dependent trapping time τ eff (E) and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described. Indications of charge multiplication were seen in the irradiated 100 μm thick diodes for all investigated fluences at voltages above 800 V. The space charge distribution extracted from TCT measurements was compared to the results of the CV measurements and showed good agreement. (orig.)

  19. Identification of {2 anti 1 anti 10} and {10 anti 10} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes

    International Nuclear Information System (INIS)

    Yoganathan, M.; Suttrop, W.; Devaty, R.P.; Choyke, W.J.

    1994-01-01

    The development of epitaxic and bulk-grown semiconductor SiC exhibiting uniform polytype phase homogeneity is critically dependent upon the accurate identification of crystallographic orientations corresponding to the desired polytype. In this paper, experimental transmission Laue photographs as well as computer-generated transmission Laue patterns are presented for {2 anti 1 anti 10} and {10 anti 10} faces of the 4H, 6H and 15R polytypes of silicon carbide. The transmission patterns permit easy recognition of polytypes and crystal orientations. (orig.)

  20. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  1. Facile synthesis of silicon carbide-titanium dioxide semiconducting nanocomposite using pulsed laser ablation technique and its performance in photovoltaic dye sensitized solar cell and photocatalytic water purification

    Energy Technology Data Exchange (ETDEWEB)

    Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Ilyas, A.M. [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Baig, Umair [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence for Scientific Research Collaboration with MIT, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2016-08-15

    Highlights: • SiC–TiO{sub 2} semiconducting nanocomposites synthesized by nanosecond PLAL technique. • Synthesized nanocomposites were morphologically and optically characterized. • Nanocomposites were applied for the photocatalytic degradation of toxic organic dye. • Photovoltaic performance was investigated in dye sensitized solar cell. - Abstract: Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and 40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO{sub 2}) to form nanocomposite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sensitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed was enhanced from 22% to 77% at 24 min under ultraviolet–visible solar spectrum in the nanocomposite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.

  2. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    International Nuclear Information System (INIS)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-01-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

  3. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  4. Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

    Science.gov (United States)

    Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

    2013-01-01

    Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

  5. Microstructure and properties of sintered silicon carbides fabricated by different methods

    International Nuclear Information System (INIS)

    Maruyama, Tadashi; Kitamura, Hideya; Iseki, Takayoshi

    1986-01-01

    Studies were made of effects of fabrication methods on the properties and microstructure of sintered silicon carbides. The specimens used in this investigation were three kinds of commercially available SiC bodies which were fabricated by reaction bonding, pressureless sintering and hot-pressing. The hot-pressed SiC contained a small amount of BeO. Measurements were carried out on density, the polytype by X-ray diffraction method and 4-point bend strength. Microstructural observation was also carried out using an optical microscope, a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results of density measurement showed that the open porosities of three specimens were negligibly small and that the density of the hot pressed SiC had nearly the theoretical density. The measurement of 4-point bend strength indicated that the reaction bonded SiC had the highest value and the hot-pressed SiC the lowest. The analysis of the polytype indicated that all the specimens consisted mainly of α-SiC of 6 H type. In the reaction bonded SiC, about 11 % of 3 C type (β-SiC) and 9 % of free Si were recognized. The average grain diameter and fracture mode of each specimen were determined from observation with an optical microscope and SEM. In the hot-pressed SiC, the fracture occurred mainly at grain boundaries, whereas it occurred mostly in grains in the reaction bonded and pressureless sintered SiC. A lot of stacking faults were observed in all the specimens with a TEM. In addition, small closed pores were often recognized in the pressureless sintered SiC. In the hot-pressed SiC, a contrast originated from strain field within grains was observed, and dislocations near grain boundaries were a characteristic feature of this material. Small short partial dislocations accompanied by stacking fault were often observed in the reaction bonded SiC. (author)

  6. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

    Energy Technology Data Exchange (ETDEWEB)

    Gryshkov, Oleksandr, E-mail: gryshkov@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Klyui, Nickolai I., E-mail: klyuini@ukr.net [College of Physics, Jilin University, 130012 Changchun (China); V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Temchenko, Volodymyr P., E-mail: tvp@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Kyselov, Vitalii S., E-mail: kyselov@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Chatterjee, Anamika, E-mail: chatterjee@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Belyaev, Alexander E., E-mail: belyaev@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Lauterboeck, Lothar, E-mail: lauterboeck@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Iarmolenko, Dmytro, E-mail: iarmolenko.dmytro@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Glasmacher, Birgit, E-mail: glasmacher@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany)

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO{sub 2}) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO{sub 2} using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO{sub 2} to the initial HA powder resulted in significant decomposition of the final HA/ZrO{sub 2} coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO{sub 2} coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of Si

  7. Unraveling the mysteries of microwave chemistry using silicon carbide reactor technology.

    Science.gov (United States)

    Kappe, C Oliver

    2013-07-16

    In the past few years, the use of microwave energy to heat chemical reactions has become an increasingly popular theme in the scientific community. This nonclassical heating technique has slowly progressed from a laboratory curiosity to an established method commonly used both in academia and in industry. Because of its efficiency, microwave heating dramatically reduces reaction times (from days and hours to minutes and seconds) and improves product purities or material properties among other advantages. Since the early days of microwave chemistry, researchers have observed rate-accelerations and, in some cases, altered product distributions as compared with reactions carried out using classical oil-bath heating. As a result, researchers have speculated that so-called specific or nonthermal microwave effects could be responsible for these differences. Much of the debate has centered on the question of whether the electromagnetic field can exert a direct influence on a chemical transformation outside of the simple macroscopic change in bulk reaction temperature. In 2009, our group developed a relatively simple "trick" that allows us to rapidly evaluate whether an observed effect seen in a microwave-assisted reaction results from a purely thermal phenomenon, or involves specific or nonthermal microwave effects. We use a microwave reaction vessel made from silicon carbide (SiC) ceramic. Because of its high microwave absorptivity, the vessel shields its contents from the electromagnetic field. As a result, we can easily mimic a conventionally heated autoclave experiment inside a microwave reactor under carefully controlled reaction conditions. The switch from an almost microwave transparent glass (Pyrex) to a strongly microwave absorbing SiC reaction vial under otherwise identical reaction conditions (temperature profiles, pressure, stirring speed) then allows us to carefully evaluate the influence of the electromagnetic field on the particular chemical transformation

  8. Comparison of diffusion coefficients and activation energies for AG diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Kim, Bong Goo; Yeo, Sung Hwan; Lee, Young Woo; Cho, Moon Sung

    2015-01-01

    The migration of silver (Ag) in silicon carbide (SiC) and 110mAg through SiC of irradiated tri-structural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is 247.4 kJ·mol -1 from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), 125.3 kJ·mol -1 from integral release experiments (annealing of irradiated TRISO fuel), 121.8 kJ·mol -1 from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and 274.8 kJ·mol -1 from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a

  9. Structure-Property Relationships in Polymer Derived Amorphous/Nano-Crystalline Silicon Carbide for Nuclear Applications

    International Nuclear Information System (INIS)

    Zunjarrao, Suraj C.; Singh, Abhishek K.; Singh, Raman P.

    2006-01-01

    Silicon carbide (SiC) is a promising candidate for several applications in nuclear reactors owing to its high thermal conductivity, high melting temperature, good chemical stability, and resistance to swelling under heavy ion bombardment. However, fabricating SiC by traditional powder processing route generally requires very high temperatures for pressureless sintering. Polymer derived ceramic materials offer unique advantages such as ability to fabricate net shaped components, incorporate reinforcements and relatively low processing temperatures. Furthermore, for SiC based ceramics fabricated using polymer infiltration process (PIP), the microstructure can be tailored by controlling the processing parameters, to get an amorphous, nanocrystalline or crystalline SiC. In this work, fabrication of polymer derived amorphous and nano-grained SiC is presented and its application as an in-core material is explored. Monolithic SiC samples are fabricated by controlled pyrolysis of allyl-hydrido-poly-carbo-silane (AHPCS) under inert atmosphere. Chemical changes, phase transformations and microstructural changes occurring during the pyrolysis process are studied as a function of the processing temperature. Polymer cross-linking and polymer to ceramic conversion is studied using infrared spectroscopy (FTIR). Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) are performed to monitor the mass loss and phase change as a function of temperature. X-ray diffraction studies are done to study the intermediate phases and microstructural changes. Variation in density is carefully monitored as a function of processing temperature. Owing to shrinkage and gas evolution during pyrolysis, precursor derived ceramics are inherently porous and composite fabrication typically involves repeated cycles of polymer re-infiltration and pyrolysis. However, there is a limit to the densification that can be achieved by this method and porosity in the final materials presents

  10. Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

    Directory of Open Access Journals (Sweden)

    Obraztsova O.

    2018-01-01

    Full Text Available Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV, wide band gap energy (3.27 eV and high thermal conductivity (4.9 W/cm·K, SiC can operate in harsh environment (high temperature, high pressure and high radiation level without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV, higher threshold displacement energy (40-50 eV and thermal conductivity (22 W/cm·K, which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD

  11. Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

    Science.gov (United States)

    Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

    2018-01-01

    Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond

  12. Dynamic tensile behavior of two-dimensional carbon fiber reinforced silicon carbide matrix composites

    International Nuclear Information System (INIS)

    Chen Xuan; Li Yulong

    2011-01-01

    Graphical abstract: The dynamic tensile behavior of 2D C/SiC composites was experimentally investigated by means of SHTB. Both the fracture surface and bundle fracture surfaces of composites were observed. The strain rate sensitivity of in-bundle interface was concluded as the dominant contributor to the strain rate sensitivity of the tensile strength. Highlights: → The tensile strength increases with strain rate. → The tensile failure strain remains independent of strain rate. → Macro-structural morphology reveals rough fracture surface under dynamic loading. → SEM morphology reveals integrated bundle pull-out under dynamic loading. → Strain rate sensitivity of in-bundle interface leads to that of the tensile strength. - Abstract: An investigation has been undertaken to determine the dynamic and quasi-static tensile behavior of two-dimensional carbon fiber reinforced silicon carbide matrix (2D-C/SiC) composites by means of the split Hopkinson tension bar and an electronic universal test machine respectively. The results indicate that the tensile strength of 2D C/SiC composites is increased at high strain rate. Furthermore, coated specimens show not only a 15% improvement in tensile strength but heightened strain rate sensitivity compared with uncoated ones. It is also shown that the tensile failure strain is strain rate insensitive and remains around 0.4%. Optical macrograph of failed specimens under dynamic loading revealed jagged fracture surfaces characterized by delamination and crack deviation, together with obvious fiber pull-out/splitting, in contrast with the smooth fracture surfaces under quasi-static loading. Scanning electron microscopy micrograph of fracture surface under dynamic loading clearly displayed integrated bundle pull-out which implies suppressed in-bundle debonding and enhanced in-bundle interfacial strengthening, in contrast with extensive in-bundle debonding under quasi-static loading. Thus we conclude that, with 2D C

  13. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

    International Nuclear Information System (INIS)

    Gryshkov, Oleksandr; Klyui, Nickolai I.; Temchenko, Volodymyr P.; Kyselov, Vitalii S.; Chatterjee, Anamika; Belyaev, Alexander E.; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-01-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO 2 ) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO 2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO 2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO 2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO 2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of SiC ceramics depend on wood

  14. Re-defining failure envelopes for silicon carbide composites based on damage process analysis by acoustic emission

    International Nuclear Information System (INIS)

    Nozawa, Takashi; Ozawa, Kazumi; Tanigawa, Hiroyasu

    2013-01-01

    A silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite is a promising candidate for a fusion DEMO blanket. To develop design codes in practical use of them, strength anisotropy is an important issue to be clarified and therefore this study aimed to evaluate the failure behavior of the SiC/SiC composites to provide a strength map. For this purpose, detailed tensile, compressive and in-plane shear failure behaviors were evaluated by the acoustic emission (AE) technique for a plain–weave (P/W) chemically vapor-infiltration (CVI) SiC/SiC composite. The AE results distinguished damage accumulation processes by separately discussing localized variations of power within a time series by wavelet analysis. Of particular emphasis is that matrix cracking occurred prior to the proportional limit stress (PLS) by both tensile and compressive tests. This is because the rough-surface of SiC fibers resulted in the strong frictional stress at the fiber/matrix (F/M) interface, showing linearity in the stress–strain curve beyond the actual matrix cracking stress (i.e., possibly no sliding of the fibers at the F/M interface). In this paper, an updated failure envelope was provided by referring the true matrix cracking stresses as more realistic and reasonable failure criteria

  15. Re-defining failure envelopes for silicon carbide composites based on damage process analysis by acoustic emission

    Energy Technology Data Exchange (ETDEWEB)

    Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp; Ozawa, Kazumi; Tanigawa, Hiroyasu

    2013-10-15

    A silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite is a promising candidate for a fusion DEMO blanket. To develop design codes in practical use of them, strength anisotropy is an important issue to be clarified and therefore this study aimed to evaluate the failure behavior of the SiC/SiC composites to provide a strength map. For this purpose, detailed tensile, compressive and in-plane shear failure behaviors were evaluated by the acoustic emission (AE) technique for a plain–weave (P/W) chemically vapor-infiltration (CVI) SiC/SiC composite. The AE results distinguished damage accumulation processes by separately discussing localized variations of power within a time series by wavelet analysis. Of particular emphasis is that matrix cracking occurred prior to the proportional limit stress (PLS) by both tensile and compressive tests. This is because the rough-surface of SiC fibers resulted in the strong frictional stress at the fiber/matrix (F/M) interface, showing linearity in the stress–strain curve beyond the actual matrix cracking stress (i.e., possibly no sliding of the fibers at the F/M interface). In this paper, an updated failure envelope was provided by referring the true matrix cracking stresses as more realistic and reasonable failure criteria.

  16. Study of irradiation effects in the silicon carbide cubic polytype by photoluminescence and electron spin resonance spectroscopies

    International Nuclear Information System (INIS)

    Lefevre, J.

    2008-01-01

    This experimental work has consisted in the study of point defects induced by an electronic irradiation in the cubic crystallographic structure of silicon carbide with low temperature photoluminescence and electron spin resonance spectroscopies. The first one of these measurement tools has allowed to estimate the displacement threshold energy in the silicon sub-lattice and then to analyze the thermal stability of the irradiation defects in the low temperature range: (10-300 K) and then in the high temperature range: (300-1400 K). Besides, on the base of a recent theoretical model, this thesis has confirmed the proposition of the isolated silicon antisite for the D1 center whose running beyond the nominal running temperature of fission nuclear reactors (generation IV), for which SiC is in part intended, seems to be particularly problematic. Measurements carried out by ESR under lighting have at last allowed to detect a new defect in its metastable spin state S=1, possibly associated to a silicon interstitial configuration. (O.M.)

  17. Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

    Science.gov (United States)

    Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

    2018-03-01

    A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

  18. Kerfless epitaxial silicon wafers with 7 ms carrier lifetimes and a wide lift-off process window

    Science.gov (United States)

    Gemmel, Catherin; Hensen, Jan; David, Lasse; Kajari-Schröder, Sarah; Brendel, Rolf

    2018-04-01

    Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing window appears to be a challenge for this process. This holds in particularly for the etching current density of the separation layer that leads to lift-off failures if it is too large or too low. Here we present kerfless PSI wafers of high electronic quality that we fabricate on weakly reorganized porous Si with etch current densities varying in a wide process window from 110 to 150 mA/cm2. We are able to detach all 17 out of 17 epitaxial wafers. All wafers exhibit charge carrier lifetimes in the range of 1.9 to 4.3 ms at an injection level of 1015 cm-3 without additional high-temperature treatment. We find even higher lifetimes in the range of 4.6 to 7.0 ms after applying phosphorous gettering. These results indicate that a weak reorganization of the porous layer can be beneficial for a large lift-off process window while still allowing for high carrier lifetimes.

  19. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Pietralunga, Silvia M. [CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano (Italy); Zani, Maurizio; Tagliaferri, Alberto [Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano (Italy)

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  20. High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, L.; Schmidt, J.; Wagner, T.A.; Bergmann, R.B. [Stuttgart Univ. (Germany). Inst. of Physical Electronics

    2001-07-01

    Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 {mu}m, obtained at a record deposition rate of 0.8 {mu}m/min and a deposition temperature of 650{sup o}C with a prebake at 810{sup o}C. A thin-film Si solar cell with a 20-{mu}m-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps. (author)