Maskless, resistless ion beam lithography

International Nuclear Information System (INIS)

Ji, Qing

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

Quantum lithography beyond the diffraction limit via Rabi-oscillations

Science.gov (United States)

Liao, Zeyang; Al-Amri, Mohammad; Zubairy, M. Suhail

2011-03-01

We propose a quantum optical method to do the sub-wavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi-oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. This method is expected to be realizable using current technology. This work is supported by a grant from the Qatar National Research Fund (QNRF) under the NPRP project and a grant from the King Abdulaziz City for Science and Technology (KACST).

Laser Interference Lithography

NARCIS (Netherlands)

van Wolferen, Hendricus A.G.M.; Abelmann, Leon; Hennessy, Theodore C.

In this chapter we explain how submicron gratings can be prepared by Laser Interference Lithography (LIL). In this maskless lithography technique, the standing wave pattern that exists at the intersection of two coherent laser beams is used to expose a photosensitive layer. We show how to build the

Protein assay structured on paper by using lithography

Science.gov (United States)

Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

2015-03-01

There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

From 2D Lithography to 3D Patterning

NARCIS (Netherlands)

Van Zeijl, H.W.; Wei, J.; Shen, C.; Verhaar, T.M.; Sarro, P.M.

2010-01-01

Lithography as developed for IC device fabrication is a high volume high accuracy patterning technology with strong 2 dimensional (2D) characteristics. This 2D nature makes it a challenge to integrate this technology in a 3 dimensional (3D) manufacturing environment. This article addresses the

Maskless, resistless ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Ji, Qing [Univ. of California, Berkeley, CA (United States)

2003-01-01

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O₂⁺, BF₂⁺, P⁺ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF₂⁺, over 90% of O₂⁺ and P⁺ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He⁺ beam is as high as 440 A/cm² • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O₂⁺ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O₂⁺ ions with the dose of 10¹⁵ cm^-2. The oxide can then serve as a hard mask for patterning of the Si film. The

Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2008-01-01

The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

Rapid fabrication of microfluidic chips based on the simplest LED lithography

Science.gov (United States)

Li, Yue; Wu, Ping; Luo, Zhaofeng; Ren, Yuxuan; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun

2015-05-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories.

Rapid fabrication of microfluidic chips based on the simplest LED lithography

International Nuclear Information System (INIS)

Li, Yue; Wu, Ping; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun; Luo, Zhaofeng; Ren, Yuxuan

2015-01-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories. (paper)

Investigation of the physics of diamond MEMS : diamond allotrope lithography

International Nuclear Information System (INIS)

Zalizniak, I.; Olivero, P.; Jamieson, D.N.; Prawer, S.; Reichart, P.; Rubanov, S.; Petriconi, S.

2005-01-01

We propose a novel lithography process in which ion induced phase transfomations of diamond form sacrificial layers allowing the fabrication of small structures including micro-electromechanical systems (MEMS). We have applied this novel lithography to the fabrication of diamond microcavities, cantilevers and optical waveguides. In this paper we present preliminary experiments directed at the fabrication of suspended diamond disks that have the potential for operation as optical resonators. Such structures would be very durable and resistant to chemical attack with potential applications as novel sensors for extreme environments or high temperature radiation detectors. (author). 3 refs., 3 figs

The partial coherence modulation transfer function in testing lithography lens

Science.gov (United States)

Huang, Jiun-Woei

2018-03-01

Due to the lithography demanding high performance in projection of semiconductor mask to wafer, the lens has to be almost free in spherical and coma aberration, thus, in situ optical testing for diagnosis of lens performance has to be established to verify the performance and to provide the suggesting for further improvement of the lens, before the lens has been build and integrated with light source. The measurement of modulation transfer function of critical dimension (CD) is main performance parameter to evaluate the line width of semiconductor platform fabricating ability for the smallest line width of producing tiny integrated circuits. Although the modulation transfer function (MTF) has been popularly used to evaluation the optical system, but in lithography, the contrast of each line-pair is in one dimension or two dimensions, analytically, while the lens stand along in the test bench integrated with the light source coherent or near coherent for the small dimension near the optical diffraction limit, the MTF is not only contributed by the lens, also by illumination of platform. In the study, the partial coherence modulation transfer function (PCMTF) for testing a lithography lens is suggested by measuring MTF in the high spatial frequency of in situ lithography lens, blended with the illumination of partial and in coherent light source. PCMTF can be one of measurement to evaluate the imperfect lens of lithography lens for further improvement in lens performance.

Atom lithography of Fe

NARCIS (Netherlands)

Sligte, te E.; Smeets, B.; van der Stam, K.M.R.; Herfst, R.W.; Straten, van der P.; Beijerinck, H.C.W.; Leeuwen, van K.A.H.

2004-01-01

Direct write atom lithography is a technique in which nearly resonant light is used to pattern an atom beam. Nanostructures are formed when the patterned beam falls onto a substrate. We have applied this lithography scheme to a ferromagnetic element, using a 372 nm laser light standing wave to

Design for manufacturability with advanced lithography

CERN Document Server

Yu, Bei

2016-01-01

This book introduces readers to the most advanced research results on Design for Manufacturability (DFM) with multiple patterning lithography (MPL) and electron beam lithography (EBL).  The authors describe in detail a set of algorithms/methodologies to resolve issues in modern design for manufacturability problems with advanced lithography.  Unlike books that discuss DFM from the product level, or physical manufacturing level, this book describes DFM solutions from a circuit design level, such that most of the critical problems can be formulated and solved through combinatorial algorithms. Enables readers to tackle the challenge of layout decompositions for different patterning techniques; Presents a coherent framework, including standard cell compliance and detailed placement, to enable Triple Patterning Lithography (TPL) friendly design; Includes coverage of the design for manufacturability with E-Beam lithography.

Fabrication of periodically ordered diamond nanostructures by microsphere lithography

Czech Academy of Sciences Publication Activity Database

Domonkos, Mária; Ižák, Tibor; Štolcová, L.; Proška, J.; Kromka, Alexander

2014-01-01

Roč. 251, č. 12 (2014), s. 2587-2592 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : CVD growth * diamond * microsphere lithography * selective area deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2014

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

International Nuclear Information System (INIS)

Li Yi-Gui; Yang Chun-Sheng; Liu Jing-Quan; Sugiyama Susumu

2011-01-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm 2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost. (cross-disciplinary physics and related areas of science and technology)

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

Science.gov (United States)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Combined e-beam lithography using different energies

Czech Academy of Sciences Publication Activity Database

Krátký, Stanislav; Kolařík, Vladimír; Horáček, Miroslav; Meluzín, Petr; Král, Stanislav

2017-01-01

Roč. 177, JUN (2017), s. 30-34 ISSN 0167-9317 R&D Projects: GA TA ČR TE01020233; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : grayscale e-beam lithography * mix and match process * absorbed energy density * resist sensitivity * micro-optical elements Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Nano-processes (applications on nano-scale) Impact factor: 1.806, year: 2016

Interference lithography for optical devices and coatings

Science.gov (United States)

Juhl, Abigail Therese

Interference lithography can create large-area, defect-free nanostructures with unique optical properties. In this thesis, interference lithography will be utilized to create photonic crystals for functional devices or coatings. For instance, typical lithographic processing techniques were used to create 1, 2 and 3 dimensional photonic crystals in SU8 photoresist. These structures were in-filled with birefringent liquid crystal to make active devices, and the orientation of the liquid crystal directors within the SU8 matrix was studied. Most of this thesis will be focused on utilizing polymerization induced phase separation as a single-step method for fabrication by interference lithography. For example, layered polymer/nanoparticle composites have been created through the one-step two-beam interference lithographic exposure of a dispersion of 25 and 50 nm silica particles within a photopolymerizable mixture at a wavelength of 532 nm. In the areas of constructive interference, the monomer begins to polymerize via a free-radical process and concurrently the nanoparticles move into the regions of destructive interference. The holographic exposure of the particles within the monomer resin offers a single-step method to anisotropically structure the nanoconstituents within a composite. A one-step holographic exposure was also used to fabricate self-healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester an isocyanate monomer within an acrylate matrix. Due to the periodic modulation of the index of refraction between the monomer and polymer, the coating can reflect a desired wavelength, allowing for tunable coloration. When the coating is scratched, polymerization of the liquid isocyanate is catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography offers a method of creating multifunctional self

Seamless-merging-oriented parallel inverse lithography technology

International Nuclear Information System (INIS)

Yang Yiwei; Shi Zheng; Shen Shanhu

2009-01-01

Inverse lithography technology (ILT), a promising resolution enhancement technology (RET) used in next generations of IC manufacture, has the capability to push lithography to its limit. However, the existing methods of ILT are either time-consuming due to the large layout in a single process, or not accurate enough due to simply block merging in the parallel process. The seamless-merging-oriented parallel ILT method proposed in this paper is fast because of the parallel process; and most importantly, convergence enhancement penalty terms (CEPT) introduced in the parallel ILT optimization process take the environment into consideration as well as environmental change through target updating. This method increases the similarity of the overlapped area between guard-bands and work units, makes the merging process approach seamless and hence reduces hot-spots. The experimental results show that seamless-merging-oriented parallel ILT not only accelerates the optimization process, but also significantly improves the quality of ILT.

Deep X-ray lithography for the fabrication of microstructures at ELSA

Energy Technology Data Exchange (ETDEWEB)

Pantenburg, F.J. E-mail: pantenburg@imt.fzk.de; Mohr, J

2001-07-21

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 {mu}m are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Deep X-ray lithography for the fabrication of microstructures at ELSA

Science.gov (United States)

Pantenburg, F. J.; Mohr, J.

2001-07-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 μm are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Deep X-ray lithography for the fabrication of microstructures at ELSA

International Nuclear Information System (INIS)

Pantenburg, F.J.; Mohr, J.

2001-01-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 μm are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described

Deep X-ray lithography for the fabrication of microstructures at ELSA

CERN Document Server

Pantenburg, F J

2001-01-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 mu m are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Extension of optical lithography by mask-litho integration with computational lithography

Science.gov (United States)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Lithography requirements in complex VLSI device fabrication

International Nuclear Information System (INIS)

Wilson, A.D.

1985-01-01

Fabrication of complex very large scale integration (VLSI) circuits requires continual advances in lithography to satisfy: decreasing minimum linewidths, larger chip sizes, tighter linewidth and overlay control, increasing topography to linewidth ratios, higher yield demands, increased throughput, harsher device processing, lower lithography cost, and a larger part number set with quick turn-around time. Where optical, electron beam, x-ray, and ion beam lithography can be applied to judiciously satisfy the complex VLSI circuit fabrication requirements is discussed and those areas that are in need of major further advances are addressed. Emphasis will be placed on advanced electron beam and storage ring x-ray lithography

Pattern Definition with DUV-Lithography at DTU Danchip

DEFF Research Database (Denmark)

Keil, Matthias; Khomtchenko, Elena; Nyholt, Henrik

2014-01-01

Deep ultra violet (DUV) illumination generated with the help of a KrF laser can be utilized to produce components having sizes of some hundreds of nanometers. This light source with its 248nm wavelength is exploited in the DUV-lithography equipment at DTU Danchip in order to fill the resolution gap...... - as shown in fig. 2 - utilizing the possibility of beam shape variations that enables to adapt the resolution and the depth of focus of the stepper to the requirements of the fabricated device. However, generally the highest achievable resolution is dependent on the pattern type - as e.g. pillar, line...... or hole comprising patterns -, its symmetry and the separations between the different structures. The projection lithography tool FPA-3000EX4 from Canon (max. NA=0,6; 1:5 reduction) produces patterns on the wafer within a maximum chip area of 22x22mm2 that can be stitched together with an accuracy of 3σ...

Innovative SU-8 Lithography Techniques and Their Applications

Directory of Open Access Journals (Sweden)

Jeong Bong Lee

2014-12-01

Full Text Available SU-8 has been widely used in a variety of applications for creating structures in micro-scale as well as sub-micron scales for more than 15 years. One of the most common structures made of SU-8 is tall (up to millimeters high-aspect-ratio (up to 100:1 3D microstructure, which is far better than that made of any other photoresists. There has been a great deal of efforts in developing innovative unconventional lithography techniques to fully utilize the thick high aspect ratio nature of the SU-8 photoresist. Those unconventional lithography techniques include inclined ultraviolet (UV exposure, back-side UV exposure, drawing lithography, and moving-mask UV lithography. In addition, since SU-8 is a negative-tone photoresist, it has been a popular choice of material for multiple-photon interference lithography for the periodic structure in scales down to deep sub-microns such as photonic crystals. These innovative lithography techniques for SU-8 have led to a lot of unprecedented capabilities for creating unique micro- and nano-structures. This paper reviews such innovative lithography techniques developed in the past 15 years or so.

Suspended liquid subtractive lithography: printing three dimensional channels directly into uncured PDMS

Science.gov (United States)

Helmer, D.; Voigt, A.; Wagner, S.; Keller, N.; Sachsenheimer, K.; Kotz, F.; Nargang, T. M.; Rapp, B. E.

2018-02-01

Polydimethylsiloxane (PDMS) is one of the most widely used polymers for the generation of microfluidic chips. The standard procedures of soft lithography require the formation of a new master structure for every design which is timeconsuming and expensive. All channel generated by soft lithography need to be consecutively sealed by bonding which is a process that can proof to be hard to control. Channel cross-sections are largely restricted to squares or flat-topped designs and the generation of truly three-dimensional designs is not straightforward. Here we present Suspended Liquid Subtractive Lithography (SLSL) a method for generating microfluidic channels of nearly arbitrary three-dimensional structures in PDMS that do not require master formation or bonding and give circular channel cross sections which are especially interesting for mimicking in vivo environments. In SLSL, an immiscible liquid is introduced into the uncured PDMS by a capillary mounted on a 3D printer head. The liquid forms continuous "threads" inside the matrix thus creating void suspended channel structures.

Wafer-shape metrics based foundry lithography

Science.gov (United States)

Kim, Sungtae; Liang, Frida; Mileham, Jeffrey; Tsai, Damon; Bouche, Eric; Lee, Sean; Huang, Albert; Hua, C. F.; Wei, Ming Sheng

2017-03-01

As device shrink, there are many difficulties with process integration and device yield. Lithography process control is expected to be a major challenge due to tighter overlay and focus control requirement. The understanding and control of stresses accumulated during device fabrication has becoming more critical at advanced technology nodes. Within-wafer stress variations cause local wafer distortions which in turn present challenges for managing overlay and depth of focus during lithography. A novel technique for measuring distortion is Coherent Gradient Sensing (CGS) interferometry, which is capable of generating a high-density distortion data set of the full wafer within a time frame suitable for a high volume manufacturing (HVM) environment. In this paper, we describe the adoption of CGS (Coherent Gradient Sensing) interferometry into high volume foundry manufacturing to overcome these challenges. Leveraging this high density 3D metrology, we characterized its In-plane distortion as well as its topography capabilities applied to the full flow of an advanced foundry manufacturing. Case studies are presented that summarize the use of CGS data to reveal correlations between in-plane distortion and overlay variation as well as between topography and device yield.

Immersion lithography defectivity analysis at DUV inspection wavelength

Science.gov (United States)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

Data sharing system for lithography APC

Science.gov (United States)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Lithography alternatives meet design style reality: How do they "line" up?

Science.gov (United States)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

Laser-produced plasma-extreme ultraviolet light source for next generation lithography

International Nuclear Information System (INIS)

Nishihara, Katsunobu; Nishimura, Hiroaki; Gamada, Kouhei; Murakami, Masakatsu; Mochizuki, Takayasu; Sasaki, Akira; Sunahara, Atsushi

2005-01-01

Extreme ultraviolet (EUV) lithography is the most promising candidate for the next generation lithography for the 45 nm technology node and below. EUV light sources under consideration use 13.5 nm radiations from multicharged xenon, tin and lithium ions, because Mo/Si multiplayer mirrors have high reflectivity at this wavelength. A review of laser-produced plasma (LPP) EUV light sources is presented with a focus on theoretical and experimental studies under the auspices of the Leading Project promoted by MEXT. We discuss three theoretical topics: atomic processes in the LPP-EUV light source, conversion efficiency from laser light to EUV light at 13.5 nm wave-length with 2% bound width, and fast ion spectra. The properties of EUV emission from tin and xenon plasmas are also shown based on experimental results. (author)

MANAGE INTERESTED PARTIES IN PROJECT ENVIRONMENT

Directory of Open Access Journals (Sweden)

BILOKON A. I.

2016-04-01

Full Text Available The success or failure of the project often depends on factors which related to the environment, surrounded by the project and which are outside of the direct control of the project manager. The concept of the project environment, the processes of environmental analysis of the project and the ways in which managers can identify potential problems and develop a plan of action to ensure the success of the project. The management strategy the main factors of the environment includes both organizational forms and measures which aimed at the development process. For alignment of the organizational forms of communication manager must have a clear idea: what kind of interested persons and their actions (functions need to monitor, and in what form to maintain communication (bilateral relations of interdependence. This information is key to the further construction of the formal organization that supports interaction, the definition of its functions, competencies, allocation of roles, areas of responsibility, instructions, forms and methods of work. Purpose. Summarize, analyze and form an idea of the potential of existing approaches to the management of the project environment. Object of study. Management processes of the persons, who interested in the project environment. Subject of study. Methods and tools for the project management environment.

Manipulation of heat-diffusion channel in laser thermal lithography.

Science.gov (United States)

Wei, Jingsong; Wang, Yang; Wu, Yiqun

2014-12-29

Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system.

Challenges of anamorphic high-NA lithography and mask making

Science.gov (United States)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10

Dr.LiTHO: a development and research lithography simulator

Science.gov (United States)

Fühner, Tim; Schnattinger, Thomas; Ardelean, Gheorghe; Erdmann, Andreas

2007-03-01

This paper introduces Dr.LiTHO, a research and development oriented lithography simulation environment developed at Fraunhofer IISB to flexibly integrate our simulation models into one coherent platform. We propose a light-weight approach to a lithography simulation environment: The use of a scripting (batch) language as an integration platform. Out of the great variety of different scripting languages, Python proved superior in many ways: It exhibits a good-natured learning-curve, it is efficient, available on virtually any platform, and provides sophisticated integration mechanisms for existing programs. In this paper, we will describe the steps, required to provide Python bindings for existing programs and to finally generate an integrated simulation environment. In addition, we will give a short introduction into selected software design demands associated with the development of such a framework. We will especially focus on testing and (both technical and user-oriented) documentation issues. Dr.LiTHO Python files contain not only all simulation parameter settings but also the simulation flow, providing maximum flexibility. In addition to relatively simple batch jobs, repetitive tasks can be pooled in libraries. And as Python is a full-blown programming language, users can add virtually any functionality, which is especially useful in the scope of simulation studies or optimization tasks, that often require masses of evaluations. Furthermore, we will give a short overview of the numerous existing Python packages. Several examples demonstrate the feasibility and productiveness of integrating Python packages into custom Dr.LiTHO scripts.

Plasmonic direct writing lithography with a macroscopical contact probe

Science.gov (United States)

Huang, Yuerong; Liu, Ling; Wang, Changtao; Chen, Weidong; Liu, Yunyue; Li, Ling

2018-05-01

In this work, we design a plasmonic direct writing lithography system with a macroscopical contact probe to achieve nanometer scale spots. The probe with bowtie-shaped aperture array adopts spring hinge and beam deflection method (BDM) to realize near-field lithography. Lithography results show that a macroscopical plasmonic contact probe can achieve a patterning resolution of around 75 nm at 365 nm wavelength, and demonstrate that the lithography system is promising for practical applications due to beyond the diffraction limit, low cost, and simplification of system configuration. CST calculations provide a guide for the design of recording structure and the arrangement of placing polarizer.

Driving imaging and overlay performance to the limits with advanced lithography optimization

Science.gov (United States)

Mulkens, Jan; Finders, Jo; van der Laan, Hans; Hinnen, Paul; Kubis, Michael; Beems, Marcel

2012-03-01

Immersion lithography is being extended to 22-nm and even below. Next to generic scanner system improvements, application specific solutions are needed to follow the requirements for CD control and overlay. Starting from the performance budgets, this paper discusses how to improve (in volume manufacturing environment) CDU towards 1-nm and overlay towards 3-nm. The improvements are based on deploying the actuator capabilities of the immersion scanner. The latest generation immersion scanners have extended the correction capabilities for overlay and imaging, offering freeform adjustments of lens, illuminator and wafer grid. In order to determine the needed adjustments the recipe generation per user application is based on a combination wafer metrology data and computational lithography methods. For overlay, focus and CD metrology we use an angle resolved optical scatterometer.

High-resolution imprint and soft lithography for patterning self-assembling systems

NARCIS (Netherlands)

Duan, X.

2010-01-01

This thesis contributes to the continuous development of patterning strategies in several different areas of unconventional nanofabrication. A series of soft lithography approaches (microcontact printing, nanomolding in capillaries), nanoimprint lithography (NIL), and capillary force lithography

Regular cell design approach considering lithography-induced process variations

OpenAIRE

Gómez Fernández, Sergio

2014-01-01

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards ...

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

International Nuclear Information System (INIS)

Tian, Yaolan; Isotalo, Tero J; Konttinen, Mikko P; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J

2017-01-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned. (paper)

MATCHING CONFIGURATIONS PROJECTS OF COOPERATIVE MILK COLLECTION PROJECT ENVIRONMENT

Directory of Open Access Journals (Sweden)

Анатолій Миколайович ТРИГУБА

2017-03-01

Full Text Available The condition analysis of dairy farming is done and the reasons for its degradation are revealed. The need of technologically integrated production systems projects, harvesting, and processing of milk are substantiated. A scientific methodology and the method of project design of milk provision cooperative coordination in the community of the project environment, which are based on systematic-evaluative approach and simulation are proposed. The criterion for the definition of rational parameters of objects configuration for milk provision cooperative projects in the community system is the maximum value of their product. The monetary functioning assessment of the configuration object of cooperative milk provision projects in the community is done. On the basis of the proposed method, we performed the coordination of project configuration of milk provision cooperative with the project environment of territory Zabolotsi community in Brody district of Lviv region.

X-ray lithography

International Nuclear Information System (INIS)

Malek, C.K.

1989-01-01

Any type of lithography is a means of printing a pattern. The suitable lithographic tool is defined according to what kind of application the replication technique is aimed at, that is to say, what size of pattern, on what type of substrate and how many substrates are desired. The trend in all the fields of science and fabrication is to go towards smaller dimensions. Especially in the case of advanced device fabrication in the semiconductor industry, the reduction of dimensions results in a higher density of integrated circuits that will result in lower cost per function and improved performance. Lithography is used to define areas that are usually protected by a resist pattern in relief on a substrate and is followed by a process which transfers the aerial pattern from the resist to the bulk substrate as, for example, in microelectronics, in between two steps of the process or levels that are used for selective diffusion of impurities to produce the desired electrical characteristics, etching, metallization

Progress in coherent lithography using table-top extreme ultraviolet lasers

Science.gov (United States)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, V.; Chansin, G.

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer...... are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed...... polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three...

Graphene nanoribbon superlattices fabricated via He ion lithography

International Nuclear Information System (INIS)

Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

2014-01-01

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He + -beam lithography can texture graphene with less damage

Graphene nanoribbon superlattices fabricated via He ion lithography

Energy Technology Data Exchange (ETDEWEB)

Archanjo, Braulio S., E-mail: bsarchanjo@inmetro.gov.br [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Fragneaud, Benjamin [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Física, Universidade Federal de Juiz de Fora, Juiz de Fora, MG 36036-330 (Brazil); Gustavo Cançado, Luiz [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Winston, Donald [Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States); Miao, Feng [Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States); National Laboratory of Solid State Microstructures, School of Physics, National Center of Microstructures and Quantum Manipulation, Nanjing University, Nanjing 210093 (China); Alberto Achete, Carlos [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Engenharia Metalúrgica e de Materiais, Universidade Federal do Rio de janeiro, Rio de Janeiro RJ 21941-972 (Brazil); Medeiros-Ribeiro, Gilberto [Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States)

2014-05-12

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

Photonic integrated circuits: new challenges for lithography

Science.gov (United States)

Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

2016-10-01

In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

Displacement Talbot lithography: an alternative technique to fabricate nanostructured metamaterials

Science.gov (United States)

Le Boulbar, E. D.; Chausse, P. J. P.; Lis, S.; Shields, P. A.

2017-06-01

Nanostructured materials are essential for many recent electronic, magnetic and optical devices. Lithography is the most common step used to fabricate organized and well calibrated nanostructures. However, feature sizes less than 200 nm usually require access to deep ultraviolet photolithography, e-beam lithography or soft lithography (nanoimprinting), which are either expensive, have low-throughput or are sensitive to defects. Low-cost, high-throughput and low-defect-density techniques are therefore of interest for the fabrication of nanostructures. In this study, we investigate the potential of displacement Talbot lithography for the fabrication of specific structures of interest within plasmonic and metamaterial research fields. We demonstrate that nanodash arrays and `fishnet'-like structures can be fabricated by using a double exposure of two different linear grating phase masks. Feature sizes can be tuned by varying the exposure doses. Such lithography has been used to fabricate metallic `fishnet'-like structures using a lift-off technique. This proof of principle paves the way to a low-cost, high-throughput, defect-free and large-scale technique for the fabrication of structures that could be useful for metamaterial and plasmonic metasurfaces. With the development of deep ultraviolet displacement Talbot lithography, the feature dimensions could be pushed lower and used for the fabrication of optical metamaterials in the visible range.

Low cost ESR based X-ray beamline for lithography experimentation

Energy Technology Data Exchange (ETDEWEB)

Kovacs, S.; Doumas, A.; Truncale, M. (Grumman Corp., Bethpage, NY (United States). Space and Electronics Div.)

1992-08-01

Any application of the electron storage ring (ESR) based X-ray lithography technology requires an X-ray radiation transport system to transfer the synchrotron radiation into a spectrum defined by the lithography process requirements. Structure of this transport system (i.e. the beamline) depends on the nature of the application. In this paper a beamline conceptual design will be discussed. The beamline is intended for the developmment of X-ray lithography technology. (orig.).

Interference Lithography for Vertical Photovoltaics

Science.gov (United States)

Balls, Amy; Pei, Lei; Kvavle, Joshua; Sieler, Andrew; Schultz, Stephen; Linford, Matthew; Vanfleet, Richard; Davis, Robert

2009-10-01

We are exploring low cost approaches for fabricating three dimensional nanoscale structures. These vertical structures could significantly improve the efficiency of devices made from low cost photovoltaic materials. The nanoscale vertical structure provides a way to increase optical absorption in thin photovoltaic films without increasing the electronic carrier separation distance. The target structure is a high temperature transparent template with a dense array of holes on a 400 - 600 nm pitch fabricated by a combination of interference lithography and nanoembossing. First a master was fabricated using ultraviolet light interference lithography and the pattern was transferred into a silicon wafer master by silicon reactive ion etching. Embossing studies were performed with the master on several high temperature polymers.

Integrated project support environments the ASPECT project

CERN Document Server

Brown, Alan W

1991-01-01

A major part of software engineering developments involve the use of computing tools which facilitate the management, maintenance, security, and building of long-scale software engineer projects. Consequently, there have been a proliferation of CASE tools and IPSES. This book looks at IPSES in general and the ASPECT project in particular, providing design and implementation details, as well as locating ASPECT in IPSE developments.Survey of integrated project support environments for more efficient software engineering**Description of a large scale IPSE--ASPECT**Evaluation of formal methods in

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

International Nuclear Information System (INIS)

Kehagias, N; Reboud, V; Chansin, G; Zelsmann, M; Jeppesen, C; Schuster, C; Kubenz, M; Reuther, F; Gruetzner, G; Torres, C M Sotomayor

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique

Lithography for enabling advances in integrated circuits and devices.

Science.gov (United States)

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Compact synchrotron radiation depth lithography facility

Science.gov (United States)

Knüppel, O.; Kadereit, D.; Neff, B.; Hormes, J.

1992-01-01

X-ray depth lithography allows the fabrication of plastic microstructures with heights of up to 1 mm but with the smallest possible lateral dimensions of about 1 μm. A resist is irradiated with ``white'' synchrotron radiation through a mask that is partially covered with x-ray absorbing microstructures. The plastic microstructure is then obtained by a subsequent chemical development of the irradiated resist. In order to irradiate a reasonably large resist area, the mask and the resist have to be ``scanned'' across the vertically thin beam of the synchrotron radiation. A flexible, nonexpensive and compact scanner apparatus has been built for x-ray depth lithography at the beamline BN1 at ELSA (the 3.5 GeV Electron Stretcher and Accelerator at the Physikalisches Institut of Bonn University). Measurements with an electronic water level showed that the apparatus limits the scanner-induced structure precision to not more than 0.02 μm. The whole apparatus is installed in a vacuum chamber thus allowing lithography under different process gases and pressures.

Implementation and benefits of advanced process control for lithography CD and overlay

Science.gov (United States)

Zavyalova, Lena; Fu, Chong-Cheng; Seligman, Gary S.; Tapp, Perry A.; Pol, Victor

2003-05-01

Due to the rapidly reduced imaging process windows and increasingly stingent device overlay requirements, sub-130 nm lithography processes are more severely impacted than ever by systamic fault. Limits on critical dimensions (CD) and overlay capability further challenge the operational effectiveness of a mix-and-match environment using multiple lithography tools, as such mode additionally consumes the available error budgets. Therefore, a focus on advanced process control (APC) methodologies is key to gaining control in the lithographic modules for critical device levels, which in turn translates to accelerated yield learning, achieving time-to-market lead, and ultimately a higher return on investment. This paper describes the implementation and unique challenges of a closed-loop CD and overlay control solution in high voume manufacturing of leading edge devices. A particular emphasis has been placed on developing a flexible APC application capable of managing a wide range of control aspects such as process and tool drifts, single and multiple lot excursions, referential overlay control, 'special lot' handling, advanced model hierarchy, and automatic model seeding. Specific integration cases, including the multiple-reticle complementary phase shift lithography process, are discussed. A continuous improvement in the overlay and CD Cpk performance as well as the rework rate has been observed through the implementation of this system, and the results are studied.

Applications of Cold Cathode PIG Ion Source in Lithography

International Nuclear Information System (INIS)

Bassal, N.I.

2012-01-01

The cold cathode Penning ion source (PIG) of axial type could be modified to produce ion and electron beam with a considerable amount to use it in the lithography process. Lithography is a new applications of ion/electron beam at which one can use the ion/ or electron beam as a pencil to write and draw on a metal surface. The electron beam takes 1/3 the time needed for ion beam to make good picture. So that with the help of ion/or electron beam lithography one can mark tools, parts, instruments, and equipment with names, numbers, designs, trademark or brand name in few seconds. It is an easy process, quick and an inexpensive method. Firstly, operating characteristics of this ion source is studied. Lithography application of ion source with optimum conditions is done. Later, the hardness and the tensile strength is measured and each of them increases with increasing time

Optical characterisation of photonic wire and photonic crystal waveguides fabricated using nanoimprint lithography

DEFF Research Database (Denmark)

Borel, Peter Ingo; Frandsen, Lars Hagedorn; Lavrinenko, Andrei

2006-01-01

We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography.......We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography....

Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies

Energy Technology Data Exchange (ETDEWEB)

Škriniarová, J., E-mail: jaroslava.skriniarova@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Pudiš, D. [Department of Physics, University of Žilina, Žilina (Slovakia); Andok, R. [Department of E-Beam Lithography, Institute of Informatics, Slovak Academy of Sciences, Bratislava (Slovakia); Lettrichová, I. [Department of Physics, University of Žilina, Žilina (Slovakia); Uherek, F. [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia)

2017-02-15

Highlights: • Applicability of the AZ 5214E photoresist for three different lithographies. • Useful for the fabrication of 1D and 2D periodic and irregular structures. • 2D structures with 260 nm period achieved by the laser interference lithography. • Structures with period below 500 nm achieved with the e-beam direct-write lithography. • Holes of 270 nm diameter made by the near-field scanning optical microscopy lithography. - Abstract: In this paper we show a comparison of chosen lithographies used for the AZ 5214E photoresist, which is normally UV sensitive but has also been investigated for its sensitivity to e-beam exposure. Three lithographies, the E-Beam Direct Write lithography (EBDW), laser Interference Lithography (IL) and the non-contact Near-field Scanning Optical Microscopy (NSOM) lithography, are discussed here and the results on exposed arrays of simple patterns are shown. With the EBDW and IL we achieved periods of the structures around half-micron, and we demonstrate attainability of dimensions smaller or comparable than usually achieved by a standard optical photolithography with the investigated photoresist. With the non-contact NSOM lithography structures with periods slightly above a micron were achieved.

Software-based data path for raster-scanned multi-beam mask lithography

Science.gov (United States)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales

Nanoimprint lithography for microfluidics manufacturing

Science.gov (United States)

Kreindl, Gerald; Matthias, Thorsten

2013-12-01

The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

Roll-to-roll UV imprint lithography for flexible electronics

NARCIS (Netherlands)

Maury, P.; Turkenburg, D.H.; Stroeks, N.; Giesen, P.; Barbu, I.; Meinders, E.R.; Bremen, A. van; Iosad, N.; Werf, R. van der; Onvlee, H.

2011-01-01

We propose a roll-to-roll UV imprint lithography tool as a way to pattern flexible PET foil with µm-resolution. As a way to overcome dimensional instability of the foil and its effect on overlay, a self-align approach was investigated, that permits to make several layers in a single lithography

PREVAIL: IBM's e-beam technology for next generation lithography

Science.gov (United States)

Pfeiffer, Hans C.

2000-07-01

PREVAIL - Projection Reduction Exposure with Variable Axis Immersion Lenses represents the high throughput e-beam projection approach to NGL which IBM is pursuing in cooperation with Nikon Corporation as alliance partner. This paper discusses the challenges and accomplishments of the PREVAIL project. The supreme challenge facing all e-beam lithography approaches has been and still is throughput. Since the throughput of e-beam projection systems is severely limited by the available optical field size, the key to success is the ability to overcome this limitation. The PREVAIL technique overcomes field-limiting off-axis aberrations through the use of variable axis lenses, which electronically shift the optical axis simultaneously with the deflected beam so that the beam effectively remains on axis. The resist images obtained with the Proof-of-Concept (POC) system demonstrate that PREVAIL effectively eliminates off- axis aberrations affecting both resolution and placement accuracy of pixels. As part of the POC system a high emittance gun has been developed to provide uniform illumination of the patterned subfield and to fill the large numerical aperture projection optics designed to significantly reduce beam blur caused by Coulomb interaction.

Nano lithography

CERN Document Server

Landis, Stefan

2013-01-01

Lithography is an extremely complex tool - based on the concept of "imprinting" an original template version onto mass output - originally using relatively simple optical exposure, masking, and etching techniques, and now extended to include exposure to X-rays, high energy UV light, and electron beams - in processes developed to manufacture everyday products including those in the realms of consumer electronics, telecommunications, entertainment, and transportation, to name but a few. In the last few years, researchers and engineers have pushed the envelope of fields including optics, physics,

Fabrication of Monolithic Bridge Structures by Vacuum-Assisted Capillary-Force Lithography

KAUST Repository

Kwak, Rhokyun; Jeong, Hoon Eui; Suh, Kahp Y.

2009-01-01

Monolithic bridge structures were fabricated by using capillary-force lithography (CFL), which was developed for patterning polymers over a large area by combining essential features of nanoimprint lithography and capillarity. A patterned soft mold

Hard-tip, soft-spring lithography.

Science.gov (United States)

Shim, Wooyoung; Braunschweig, Adam B; Liao, Xing; Chai, Jinan; Lim, Jong Kuk; Zheng, Gengfeng; Mirkin, Chad A

2011-01-27

Nanofabrication strategies are becoming increasingly expensive and equipment-intensive, and consequently less accessible to researchers. As an alternative, scanning probe lithography has become a popular means of preparing nanoscale structures, in part owing to its relatively low cost and high resolution, and a registration accuracy that exceeds most existing technologies. However, increasing the throughput of cantilever-based scanning probe systems while maintaining their resolution and registration advantages has from the outset been a significant challenge. Even with impressive recent advances in cantilever array design, such arrays tend to be highly specialized for a given application, expensive, and often difficult to implement. It is therefore difficult to imagine commercially viable production methods based on scanning probe systems that rely on conventional cantilevers. Here we describe a low-cost and scalable cantilever-free tip-based nanopatterning method that uses an array of hard silicon tips mounted onto an elastomeric backing. This method-which we term hard-tip, soft-spring lithography-overcomes the throughput problems of cantilever-based scanning probe systems and the resolution limits imposed by the use of elastomeric stamps and tips: it is capable of delivering materials or energy to a surface to create arbitrary patterns of features with sub-50-nm resolution over centimetre-scale areas. We argue that hard-tip, soft-spring lithography is a versatile nanolithography strategy that should be widely adopted by academic and industrial researchers for rapid prototyping applications.

Electron Beam Lithography for nano-patterning

DEFF Research Database (Denmark)

Greibe, Tine; Anhøj, Thomas Aarøe; Khomtchenko, Elena

2014-01-01

in a polymer. Electron beam lithography is a suitable method for nano-sized production, research, or development of semiconductor components on a low-volume level. Here, we present electron beam lithography available at DTU Danchip. We expertize a JEOL 9500FZ with electrons accelerated to an energy of 100ke......, the room temperature is controlled to an accuracy of 0.1 degrees in order to minimize the thermally induced drift of the beam during pattern writing. We present process results in a standard positive tone resist and pattern transfer through etch to a Silicon substrate. Even though the electron beam...... of electrons in the substrate will influence the patterning. We present solutions to overcome these obstacles....

Electron-beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. (UK)

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

Energy Technology Data Exchange (ETDEWEB)

Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee [Inha Univ, Incheon (Korea, Republic of)

2016-08-15

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

International Nuclear Information System (INIS)

Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee

2016-01-01

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed

Flexible method based on four-beam interference lithography for fabrication of large areas of perfectly periodic plasmonic arrays

Czech Academy of Sciences Publication Activity Database

Vala, Milan; Homola, Jiří

2014-01-01

Roč. 22, č. 15 (2014), s. 18778-18789 ISSN 1094-4087 R&D Projects: GA ČR GBP205/12/G118 Institutional support: RVO:67985882 Keywords : Interference lithography * Polymer substrate * Four-beam interference Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.488, year: 2014

Development of Blue Laser Direct-Write Lithography System

Directory of Open Access Journals (Sweden)

Hao-Wen Chang

2012-01-01

Full Text Available The optical lithography system researched in this study adopted the laser direct-write lithography technology with nano-positioning stage by using retailing blue ray optical pickup head contained 405nm wavelength and 0.85 numerical aperture of focus lens as the system lighting source. The system employed a photodiode received the focusing error signal reflected by the glass substrate to identify specimen position and automatic focused control with voice coil motor. The pattern substrate was loaded on a nano-positioning stage; input pattern path automatically and collocate with inner program at the same time. This research has successfully developed a blue laser lithography process system. The single spot size can be narrowed down to 3.07 μm and the linewidth is 3.3μm, time of laser control can reach to 450 ns and the exposure pattern can be controlled by program as well.

Solvent-vapor-assisted imprint lithography

NARCIS (Netherlands)

Voicu, Nicoleta E.; Ludwigs, Sabine; Crossland, Edward J. W.; Andrew, Piers; Steiner, Ullrich

2007-01-01

Sub-micrometer features are replicated into high-molecular-weight polymer resists by using solvent-assisted nanoimprint lithography (see figure). By swelling the polymer in a controlled solvent-vapor atmosphere, millibar pressures and ambient temperatures are sufficient to achieve high-fidelity

Selective binding of oligonucleotide on TiO2 surfaces modified by swift heavy ion beam lithography

International Nuclear Information System (INIS)

Vicente Pérez-Girón, J.; Hirtz, M.; McAtamney, C.; Bell, A.P.; Antonio Mas, J.; Jaafar, M.; Luis, O. de; Fuchs, H.

2014-01-01

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO 2 single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO 2 surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO 2 substrates useful for potential biosensor applications

Electron beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. 5 figs

Low-energy electron beam proximity projection lithography (LEEPL): the world's first e-beam production tool, LEEPL 3000

Science.gov (United States)

Behringer, Uwe F. W.

2004-06-01

In June 2000 ago the company Accretech and LEEPL corporation decided to develop an E-beam lithography tool for high throughput wafer exposure, called LEEPL. In an amazing short time the alpha tool was built. In 2002 the beta tool was installed at Accretech. Today the first production tool the LEEPL 3000 is ready to be shipped. The 2keV E-beam tool will be used in the first lithography strategy to expose (in mix and match mode with optical exposure tools) critical levels like gate structures, contact holes (CH), and via pattern of the 90 nm and 65 nm node. At the SEMATECH EPL workshop on September 22nd in Cambridge, England it was mentioned that the amount of these levels will increase very rapidly (8 in 2007; 13 in 2010 and 17 in 2013). The schedule of the production tool for 45 nm node is mid 2005 and for the 32 nm node 2008. The Figure 1 shows from left to right α-tool, the β-tool and the production tool LEEPL 3000. Figure 1 also shows the timetable of the 4 LEEPL forum all held in Japan.

Mask-induced aberration in EUV lithography

Science.gov (United States)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

D5.2 Project web environment

OpenAIRE

Fernie, Kate; Usher, Carol

2011-01-01

This deliverable presents a snapshot of the project web environment in July 2011. The project website http://www.digcur-education.org/eng was launched in month one of the project. The aim of this site is to provide information about the project to stakeholders and to related projects, as well as provide an Intranet for members of the project consortium. The website includes a ‘Join Us’ page to encourage interested parties to register as members of the DigCurV network, to receive the p...

X-ray lithography for micro- and nano-fabrication at ELETTRA for interdisciplinary applications

International Nuclear Information System (INIS)

Di Fabrizio, E; Fillipo, R; Cabrini, S

2004-01-01

ELETTRA (http://www.elettra.trieste.it/index.html) is a third generation synchrotron radiation source facility operating at Trieste, Italy, and hosts a wide range of research activities in advanced materials analysis and processing, biology and nano-science at several various beam lines. The energy spectrum of ELETTRA allows x-ray nano-lithography using soft (1.5 keV) and hard x-ray (10 keV) wavelengths. The Laboratory for Interdisciplinary Lithography (LIILIT) was established in 1998 as part of an Italian national initiative on micro- and nano-technology project of INFM and is funded and supported by the Italian National Research Council (CNR), INFM and ELETTRA. LILIT had developed two dedicated lithographic beam lines for soft (1.5 keV) and hard x-ray (10 keV) for micro- and nano-fabrication activities for their applications in engineering, science and bio-medical applications. In this paper, we present a summary of our research activities in micro- and nano-fabrication involving x-ray nanolithography at LILIT's soft and hard x-ray beam lines

EB and EUV lithography using inedible cellulose-based biomass resist material

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Multiple beam interference lithography: A tool for rapid fabrication of plasmonic arrays of arbitrary shaped nanomotifs

Czech Academy of Sciences Publication Activity Database

Vala, Milan; Homola, Jiří

2016-01-01

Roč. 24, č. 14 (2016), s. 15656-15665 ISSN 1094-4087 R&D Projects: GA ČR(CZ) GBP205/12/G118 Grant - others:AV ČR(CZ) AP1101 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:67985882 Keywords : displacement talbot lithography * noncoplanar beams * large areas Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.307, year: 2016

A virtual therapeutic environment with user projective agents.

Science.gov (United States)

Ookita, S Y; Tokuda, H

2001-02-01

Today, we see the Internet as more than just an information infrastructure, but a socializing place and a safe outlet of inner feelings. Many personalities develop aside from real world life due to its anonymous environment. Virtual world interactions are bringing about new psychological illnesses ranging from netaddiction to technostress, as well as online personality disorders and conflicts in multiple identities that exist in the virtual world. Presently, there are no standard therapy models for the virtual environment. There are very few therapeutic environments, or tools especially made for virtual therapeutic environments. The goal of our research is to provide the therapy model and middleware tools for psychologists to use in virtual therapeutic environments. We propose the Cyber Therapy Model, and Projective Agents, a tool used in the therapeutic environment. To evaluate the effectiveness of the tool, we created a prototype system, called the Virtual Group Counseling System, which is a therapeutic environment that allows the user to participate in group counseling through the eyes of their Projective Agent. Projective Agents inherit the user's personality traits. During the virtual group counseling, the user's Projective Agent interacts and collaborates to recover and increase their psychological growth. The prototype system provides a simulation environment where psychologists can adjust the parameters and customize their own simulation environment. The model and tool is a first attempt toward simulating online personalities that may exist only online, and provide data for observation.

The application of synchrotron radiation to X-ray lithography

International Nuclear Information System (INIS)

Spiller, E.; Eastman, D.E.; Feder, R.; Grobman, W.D.; Gudat, W.; Topalian, J.

1976-06-01

Synchrotron radiation from the German electron synchrotron DESY in Hamburg has been used for X-ray lithograpgy. Replications of different master patterns (for magnetic bubble devices, fresnel zone plates, etc.) were made using various wavelengths and exposures. High quality lines down to 500 A wide have been reproduced using very soft X-rays. The sensitivities of X-ray resists have been evaluated over a wide range of exposures. Various critical factors (heating, radiation damage, etc.) involved with X-ray lithography using synchrotron radiation have been studied. General considerations of storage ring sources designed as radiation sources for X-ray lithography are discussed, together with a comparison with X-ray tube sources. The general conclusion is that X-ray lithography using synchrotron radiation offers considerable promise as a process for forming high quality sub-micron images with exposure times as short as a few seconds. (orig.) [de

Interpreting cost of ownership for mix-and-match lithography

Science.gov (United States)

Levine, Alan L.; Bergendahl, Albert S.

1994-05-01

Cost of ownership modeling is a critical and emerging tool that provides significant insight into the ways to optimize device manufacturing costs. The development of a model to deal with a particular application, mix-and-match lithography, was performed in order to determine the level of cost savings and the optimum ways to create these savings. The use of sensitivity analysis with cost of ownership allows the user to make accurate trade-offs between technology and cost. The use and interpretation of the model results are described in this paper. Parameters analyzed include several manufacturing considerations -- depreciation, maintenance, engineering and operator labor, floorspace, resist, consumables and reticles. Inherent in this study is the ability to customize this analysis for a particular operating environment. Results demonstrate the clear advantages of a mix-and-match approach for three different operating environments. These case studies also demonstrate various methods to efficiently optimize cost savings strategies.

Computer numerical control (CNC) lithography: light-motion synchronized UV-LED lithography for 3D microfabrication

International Nuclear Information System (INIS)

Kim, Jungkwun; Allen, Mark G; Yoon, Yong-Kyu

2016-01-01

This paper presents a computer-numerical-controlled ultraviolet light-emitting diode (CNC UV-LED) lithography scheme for three-dimensional (3D) microfabrication. The CNC lithography scheme utilizes sequential multi-angled UV light exposures along with a synchronized switchable UV light source to create arbitrary 3D light traces, which are transferred into the photosensitive resist. The system comprises a switchable, movable UV-LED array as a light source, a motorized tilt-rotational sample holder, and a computer-control unit. System operation is such that the tilt-rotational sample holder moves in a pre-programmed routine, and the UV-LED is illuminated only at desired positions of the sample holder during the desired time period, enabling the formation of complex 3D microstructures. This facilitates easy fabrication of complex 3D structures, which otherwise would have required multiple manual exposure steps as in the previous multidirectional 3D UV lithography approach. Since it is batch processed, processing time is far less than that of the 3D printing approach at the expense of some reduction in the degree of achievable 3D structure complexity. In order to produce uniform light intensity from the arrayed LED light source, the UV-LED array stage has been kept rotating during exposure. UV-LED 3D fabrication capability was demonstrated through a plurality of complex structures such as V-shaped micropillars, micropanels, a micro-‘hi’ structure, a micro-‘cat’s claw,’ a micro-‘horn,’ a micro-‘calla lily,’ a micro-‘cowboy’s hat,’ and a micro-‘table napkin’ array. (paper)

Functionalized SU-8 patterned with X-ray Lithography

DEFF Research Database (Denmark)

Balslev, Søren; Romanato, F.

2005-01-01

spontaneous emission light source that couples out light normal to the chip plane. In addition we examine the influence of the x-ray irradiation on the fluorescence of thin films of dye doped SU-8. The dye embedded in the SU-8 is optically excited during, characterization by an external light source tuned......In this work we demonstrate the feasibility of x-ray lithography on SU-8 photoresist doped with the laser dye Rhodamine 6G, while retaining the photoactive properties of the embedded dye. Two kinds of structures are fabricated via soft x-ray lithography and characterized: a laser and in amplified...

Advanced Engineering Environment FY09/10 pilot project.

Energy Technology Data Exchange (ETDEWEB)

Lamph, Jane Ann; Kiba, Grant W.; Pomplun, Alan R.; Dutra, Edward G.; Sego, Abraham L.

2010-06-01

The Advanced Engineering Environment (AEE) project identifies emerging engineering environment tools and assesses their value to Sandia National Laboratories and our partners in the Nuclear Security Enterprise (NSE) by testing them in our design environment. This project accomplished several pilot activities, including: the preliminary definition of an engineering bill of materials (BOM) based product structure in the Windchill PDMLink 9.0 application; an evaluation of Mentor Graphics Data Management System (DMS) application for electrical computer-aided design (ECAD) library administration; and implementation and documentation of a Windchill 9.1 application upgrade. The project also supported the migration of legacy data from existing corporate product lifecycle management systems into new classified and unclassified Windchill PDMLink 9.0 systems. The project included two infrastructure modernization efforts: the replacement of two aging AEE development servers for reliable platforms for ongoing AEE project work; and the replacement of four critical application and license servers that support design and engineering work at the Sandia National Laboratories/California site.

Helium ion lithography principles and performance

NARCIS (Netherlands)

Drift, E. van der; Maas, D.J.

2012-01-01

Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities. Key principles and critical conditions of the technique are explained. From

Submicron three-dimensional structures fabricated by reverse contact UV nanoimprint lithography

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, Vincent; Chansin, G.

2006-01-01

The fabrication of a three-dimensional multilayered nanostructure is demonstrated with a newly developed nanofabrication technique, namely, reverse contact ultraviolet nanoimprint lithography. This technique is a combination of reverse nanoimprint lithography and contact ultraviolet lithography....... In this process, a UV cross-linkable polymer and a thermoplastic polymer are spin coated onto a patterned hybrid metal-quartz stamp. These thin polymer films are then transferred from the stamp to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light....... After separation of the stamp and the substrate, the unexposed polymer areas are rinsed away with acetone leaving behind the negative features of the original stamp with no residual layer....

Selective binding of oligonucleotide on TiO{sub 2} surfaces modified by swift heavy ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Vicente Pérez-Girón, J. [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Emerging Viruses Department Heinrich Pette Institute, Hamburg 20251 (Germany); Hirtz, M. [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); McAtamney, C.; Bell, A.P. [Advanced Microscopy Laboratory, CRANN, Trinity College Dublin, Dublin 2 (Ireland); Antonio Mas, J. [Laboratorio de Genómica del Centro de Apoyo Tecnológico, Universidad Rey Juan Carlos, Campus de Alcorcón 28922, Madrid (Spain); Jaafar, M. [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad Autónoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Luis, O. de [Nanoate, S.L. C/Poeta Rafael Morales 2, San Sebastian de los Reyes, 28702 Madrid (Spain); Departamento de Bioquímica, Fisiología y Genética Molecular, Facultad de Ciencias de la Salud, Universidad Rey Juan Carlos, Campus de Alcorcón, 28922 Madrid (Spain); Fuchs, H. [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Physical Institute and Center for Nanotechnology (CeNTech), Wilhelm-Klemm-Straße 10, University of Münster (Germany); and others

2014-11-15

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO{sub 2} single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO{sub 2} surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO{sub 2} substrates useful for potential biosensor applications.

DWDM laser arrays fabricated using thermal nanoimprint lithography on Indium Phosphide substrates

DEFF Research Database (Denmark)

Smistrup, K.; Nørregaard, J.; Mironov, A.

2013-01-01

by including a lambda quarter shift at the center of the grating. The need for phase shifts and multiple wavelengths eliminates some lithography methods such as holography. Typically, these lasers are produced by e-beam lithography (EBL). We present a production method based on thermal nanoimprint lithography...... during the imprint process and the narrow temperature window for imprint and separation (80°C and 55°C) ensures minimal issues with thermal mismatch between the InP substrate and the Si stamp. The imprinted InP wafers were processed in NeoPhotonics standard process line to create working lasers...

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

Directory of Open Access Journals (Sweden)

Manuel R. Gonçalves

2011-08-01

Full Text Available We present two routes for the fabrication of plasmonic structures based on nanosphere lithography templates. One route makes use of soft-lithography to obtain arrays of epoxy resin hemispheres, which, in a second step, can be coated by metal films. The second uses the hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy resin cast of the pillars, coated with metal films, allows us to invert the structure and obtain arrays of triangular holes within the metal. Both fabrication methods illustrate the preparation of large arrays of nanocavities within metal films at low cost.Gold films of different thicknesses were evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which can be utilized in experiments requiring light confinement.

Imprint lithography: lab curiosity or the real NGL

Science.gov (United States)

Resnick, Douglas J.; Dauksher, William J.; Mancini, David P.; Nordquist, Kevin J.; Bailey, Todd C.; Johnson, Stephen C.; Stacey, Nicholas A.; Ekerdt, John G.; Willson, C. Grant; Sreenivasan, S. V.; Schumaker, Norman E.

2003-06-01

The escalating cost for Next Generation Lithography (NGL) tools is driven in part by the need for complex sources and optics. The cost for a single NGL tool could exceed $50M in the next few years, a prohibitive number for many companies. As a result, several researchers are looking at low cost alternative methods for printing sub-100 nm features. In the mid-1990s, several resarech groups started investigating different methods for imprinting small features. Many of these methods, although very effective at printing small features across an entire wafer, are limited in their ability to do precise overlay. In 1999, Willson and Sreenivasan discovered that imprinting could be done at low pressures and at room temperatures by using low viscosity UV curable monomers. The technology is typically referred to as Step and Flash Imprint Lithography. The use of a quartz template enabled the photocuring process to occur and also opened up the potential for optical alignment of teh wafer and template. This paper traces the development of nanoimprint lithography and addresses the issues that must be solved if this type of technology is to be applied to high-density silicon integrated circuitry.

Analysis of technology and development plan on Lithography process of display industry and semiconductor

International Nuclear Information System (INIS)

2005-02-01

This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.

Wavelength selection for multilayer coatings for the lithography generation beyond extreme ultraviolet

NARCIS (Netherlands)

Makhotkin, Igor Alexandrovich; Zoethout, E.; Louis, Eric; Yakunin, A.M.; Muellender, S.; Bijkerk, Frederik

2012-01-01

Reducing the operating wavelength in advanced photolitho- graphy while maintaining the lithography machine’s produc- tivity has been a traditional way to enable improved imaging for the last 20 years. The transition from 13.5 nm to 6.5 to 6.9 nm optical lithography offers a possibility to combine

Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

KAUST Repository

Wan, Weiwei

2014-03-01

Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.

Advanced coatings for next generation lithography

Science.gov (United States)

Naujok, P.; Yulin, S.; Kaiser, N.; Tünnermann, A.

2015-03-01

Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.

A preliminary study of synchrotron light sources for x-ray lithography

International Nuclear Information System (INIS)

Hoffmann, C.R.; Bigham, C.B.; Ebrahim, N.A.; Sawicki, J.A.; Taylor, T.

1989-02-01

A preliminary study of synchrotron light sources has been made, primarily oriented toward x-ray lithography. X-ray lithography is being pursued vigorously in several countries, with a goal of manufacturing high-density computer chips (0.25 μm feature sizes), and may attain commercial success in the next decade. Many other applications of soft x-rays appear worthy of investigation as well. The study group visited synchrotron radiation facilities and had discussions with members of the synchrotron radiation community, particularly Canadians. It concluded that accelerator technology for a conventional synchrotron light source appropriate for x-ray lithography is well established and is consistent with skills and experience at Chalk River Nuclear Laboratories. Compact superconducting systems are being developed also. Their technical requirements overlap with capabilities at Chalk River. (32 refs)

SOLERAS - Solar Controlled Environment Agriculture Project. Final report, Volume 1. Project summary

Energy Technology Data Exchange (ETDEWEB)

1985-12-30

A summary of the Solar Controlled Environment Agriculture Project is presented. The design of the greenhouses include transparent double pane glass roof with channels for fluid between the panes, inner pane tinted and double pane extruded acrylic aluminized mylar shade and diffuser. Solar energy technologies provide power for water desalination, for pumping irrigation water, and for cooling and heating the controlled environment space so that crops can grow in arid lands. The project is a joint effort between the United States and Saudi Arabia. (BCS)

Simulation flow and model verification for laser direct-write lithography

Science.gov (United States)

Onanuga, Temitope; Rumler, Maximilian; Erdmann, Andreas

2017-07-01

A simulation flow for laser direct-write lithography (LDWL), a maskless lithography process in which a focused laser beam is scanned through a photoresist, is proposed. The simulation flow includes focusing of Gaussian beams, photoresist exposure, free-radical polymerization chemistry of the photoresist, and photoresist development. We applied the simulation method to investigate the scaling of feature sizes or linewidths for a varying number of exposure cycles at a total constant exposure dose. Experimental results from literature demonstrate that exposing the photoresist over multiple exposure cycles causes a reduction in linewidths. We explore possible reasons for this phenomenon and conclude that radical losses occurring between subsequent exposures provide a possible explanation of the observed effects. Furthermore, we apply the developed simulation method to analyze lithographic structures that were fabricated by a combination of LDWL and nanoimprint lithography. The simulation results agree with the experimental tendencies of a reduced likelihood of overexposures with an increase in the number of exposure cycles.

Closed-looped in situ nano processing on a culturing cell using an inverted electron beam lithography system

International Nuclear Information System (INIS)

Hoshino, Takayuki; Mabuchi, Kunihiko

2013-01-01

Highlights: ► An electron beam lithography (EBL) was used as an in situ nano processing for a living cell. ► A synchronized optics was containing an inverted EBL and an optical microscope. ► This system visualized real-time images of the EB-induced nano processing. ► We demonstrated the nano processing for a culturing cell with 200–300 nm resolution. ► Our system would be able to provide high resolution display of virtual environments. -- Abstract: The beam profile of an electron beam (EB) can be focused onto less than a nanometer spot and scanned over a wide field with extremely high speed sweeping. Thus, EB is employed for nano scale lithography in applied physics research studies and in fabrication of semiconductors. We applied a scanning EB as a control system for a living cell membrane which is representative of large scale complex systems containing nanometer size components. First, we designed the opposed co-axial dual optics containing inverted electron beam lithography (I-EBL) system and a fluorescent optical microscope. This system could provide in situ nano processing for a culturing living cell on a 100-nm-thick SiN nanomembrane, which was placed between the I-EBL and the fluorescent optical microscope. Then we demonstrated the EB-induced chemical direct nano processing for a culturing cell with hundreds of nanometer resolution and visualized real-time images of the scanning spot of the EB-induced luminescent emission and chemical processing using a high sensitive camera mounted on the optical microscope. We concluded that our closed-loop in situ nano processing would be able to provide a nanometer resolution display of virtual molecule environments to study functional changes of bio-molecule systems

Rapid biochemical functionalization of technical surfaces by means of a photobleaching-based maskless projection lithography process

Science.gov (United States)

Waldbaur, Ansgar; Waterkotte, Björn; Leuthold, Juerg; Schmitz, Katja; Rapp, Bastian E.

2013-03-01

MEMS/MOEMS based systems are increasingly applied in the biological and biomedical context, e.g. in form of biosensors or substrates for monitoring biological responses such as cell migration. For such applications, technical surfaces have to be provided with suitable biochemical functionalization. Typical functionalization procedures include wet-chemical techniques based on self-assembled monolayers of thiols on gold or silanes on glass. These processes create binary patterns and are often of limited use if spatially constrained non-binary patterns like surface bound biochemical gradients have to be provided. In order to create gradients or patterns, methods such as direct spotting or dip pen nanolithography can be used. Here, gradients can be emulated by varying the spot density or the concentration of the solutions employed. However, these methods are serial in nature and are thus of limited use if large surface areas have to be patterned. We present a technique to generate gradients of biochemical function by a photobleaching-based process allowing fast large-scale patterning. The process is based on photobleaching resulting in light-induced coupling of a fluorescently tagged biomolecule to a technical surface by concerted bleaching of the fluorophore. We custom designed a maskless projection lithography system based on a digital mirror device that allows the rapid creation of 8-bit grayscale protein patterns on any technical surface from digital data (e.g. bitmap files). We demonstrate how this process can be used to obtain patterns of several cm2 lateral size at micrometer resolution within minutes.

Charge storage in mesoscopic graphitic islands fabricated using AFM bias lithography

Energy Technology Data Exchange (ETDEWEB)

Kurra, Narendra; Basavaraja, S; Kulkarni, G U [Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064 (India); Prakash, Gyan; Fisher, Timothy S; Reifenberger, Ronald G, E-mail: kulkarni@jncasr.ac.in, E-mail: reifenbr@purdue.edu [Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States)

2011-06-17

Electrochemical oxidation and etching of highly oriented pyrolytic graphite (HOPG) has been achieved using biased atomic force microscopy (AFM) lithography, allowing patterns of varying complexity to be written into the top layers of HOPG. The graphitic oxidation process and the trench geometry after writing were monitored using intermittent contact mode AFM. Electrostatic force microscopy reveals that the isolated mesoscopic islands formed during the AFM lithography process become positively charged, suggesting that they are laterally isolated from the surrounding HOPG substrate. The electrical transport studies of these laterally isolated finite-layer graphitic islands enable detailed characterization of electrical conduction along the c-direction and reveal an unexpected stability of the charged state. Utilizing conducting-atomic force microscopy, the measured I(V) characteristics revealed significant non-linearities. Micro-Raman studies confirm the presence of oxy functional groups formed during the lithography process.

Advanced engineering environment collaboration project.

Energy Technology Data Exchange (ETDEWEB)

Lamph, Jane Ann; Pomplun, Alan R.; Kiba, Grant W.; Dutra, Edward G.; Dankiewicz, Robert J.; Marburger, Scot J.

2008-12-01

The Advanced Engineering Environment (AEE) is a model for an engineering design and communications system that will enhance project collaboration throughout the nuclear weapons complex (NWC). Sandia National Laboratories and Parametric Technology Corporation (PTC) worked together on a prototype project to evaluate the suitability of a portion of PTC's Windchill 9.0 suite of data management, design and collaboration tools as the basis for an AEE. The AEE project team implemented Windchill 9.0 development servers in both classified and unclassified domains and used them to test and evaluate the Windchill tool suite relative to the needs of the NWC using weapons project use cases. A primary deliverable was the development of a new real time collaborative desktop design and engineering process using PDMLink (data management tool), Pro/Engineer (mechanical computer aided design tool) and ProductView Lite (visualization tool). Additional project activities included evaluations of PTC's electrical computer aided design, visualization, and engineering calculations applications. This report documents the AEE project work to share information and lessons learned with other NWC sites. It also provides PTC with recommendations for improving their products for NWC applications.

Advanced engineering environment collaboration project

International Nuclear Information System (INIS)

Lamph, Jane Ann; Pomplun, Alan R.; Kiba, Grant W.; Dutra, Edward G.; Dankiewicz, Robert J.; Marburger, Scot J.

2008-01-01

The Advanced Engineering Environment (AEE) is a model for an engineering design and communications system that will enhance project collaboration throughout the nuclear weapons complex (NWC). Sandia National Laboratories and Parametric Technology Corporation (PTC) worked together on a prototype project to evaluate the suitability of a portion of PTC's Windchill 9.0 suite of data management, design and collaboration tools as the basis for an AEE. The AEE project team implemented Windchill 9.0 development servers in both classified and unclassified domains and used them to test and evaluate the Windchill tool suite relative to the needs of the NWC using weapons project use cases. A primary deliverable was the development of a new real time collaborative desktop design and engineering process using PDMLink (data management tool), Pro/Engineer (mechanical computer aided design tool) and ProductView Lite (visualization tool). Additional project activities included evaluations of PTC's electrical computer aided design, visualization, and engineering calculations applications. This report documents the AEE project work to share information and lessons learned with other NWC sites. It also provides PTC with recommendations for improving their products for NWC applications

Report of the fifth workshop on synchrotron x-ray lithography

International Nuclear Information System (INIS)

Williams, G.P.; Godel, J.B.; Brown, G.S.

1989-01-01

Semiconductors comprise a greater part of the United States economy than the aircraft, steel and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990's. X-ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x-ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x-ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the ''Exposure Tool,'' that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x-ray lithography and set a time frame, the other to focus on sources

Report of the fifth workshop on synchrotron x-ray lithography

Energy Technology Data Exchange (ETDEWEB)

Williams, G.P.; Godel, J.B. (Brookhaven National Lab., Upton, NY (USA)); Brown, G.S. (Stanford Univ., CA (USA). Stanford Synchrotron Radiation Lab.); Liebmann, W. (Suss (Karl) America, Essex Junction, VT (USA))

1989-01-01

Semiconductors comprise a greater part of the United States economy than the aircraft, steel and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990's. X-ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x-ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x-ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the Exposure Tool,'' that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x-ray lithography and set a time frame, the other to focus on sources.

Report on the fifth workshop on synchrotron x ray lithography

Science.gov (United States)

Williams, G. P.; Godel, J. B.; Brown, G. S.; Liebmann, W.

Semiconductors comprise a greater part of the United States economy than the aircraft, steel, and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990s. X ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin, and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the exposure tool, that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x ray lithography and set a time frame, the other to focus on sources.

Maskless, parallel patterning with zone-plate array lithography

International Nuclear Information System (INIS)

Carter, D. J. D.; Gil, Dario; Menon, Rajesh; Mondol, Mark K.; Smith, Henry I.; Anderson, Erik H.

1999-01-01

Zone-plate array lithography (ZPAL) is a maskless lithography scheme that uses an array of shuttered zone plates to print arbitrary patterns on a substrate. An experimental ultraviolet ZPAL system has been constructed and used to simultaneously expose nine different patterns with a 3x3 array of zone plates in a quasidot-matrix fashion. We present exposed patterns, describe the system design and construction, and discuss issues essential to a functional ZPAL system. We also discuss another ZPAL system which operates with 4.5 nm x radiation from a point source. We present simulations which show that, with our existing x-ray zone plates and this system, we should be able to achieve 55 nm resolution. (c) 1999 American Vacuum Society

Multi-level single mode 2D polymer waveguide optical interconnects using nano-imprint lithography

NARCIS (Netherlands)

Khan, M.U.; Justice, J.; Petäjä, J.; Korhonen, T.; Boersma, A.; Wiegersma, S.; Karppinen, M.; Corbett, B.

2015-01-01

Single and multi-layer passive optical interconnects using single mode polymer waveguides are demonstrated using UV nano-imprint lithography. The fabrication tolerances associated with imprint lithography are investigated and we show a way to experimentally quantify a small variation in index

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

Science.gov (United States)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

How Does a Project Manager's Level of Development Influence Conceptualizations of Project Management and the Project Development Environment?

Science.gov (United States)

Lynch, Margaret M.

2013-01-01

This study explores the meaning project managers (PMs) make of their project environment, how they lead their teams and have incorporate complexity into their project management approach. The exploration of the PM's developmental level and meaning making offers a different angle on the project management and leadership literature. The study…

Modular EUV Source for the next generation lithography

International Nuclear Information System (INIS)

Sublemontier, O.; Rosset-Kos, M.; Ceccotti, T.; Hergott, J.F.; Auguste, Th.; Normand, D.; Schmidt, M.; Beaumont, F.; Farcage, D.; Cheymol, G.; Le Caro, J.M.; Cormont, Ph.; Mauchien, P.; Thro, P.Y.; Skrzypczak, J.; Muller, S.; Marquis, E.; Barthod, B.; Gaurand, I.; Davenet, M.; Bernard, R.

2011-01-01

The present work, performed in the frame of the EXULITE project, was dedicated to the design and characterization of a laser-plasma-produced extreme ultraviolet (EUV) source prototype at 13.5 nm for the next generation lithography. It was conducted in cooperation with two laboratories from CEA, ALCATEL and THALES. One of our approach originalities was the laser scheme modularity. Six Nd:YAG laser beams were focused at the same time on a xenon filament jet to generate the EUV emitting plasma. Multiplexing has important industrial advantages and led to interesting source performances in terms of in-band power, stability and angular emission properties with the filament jet target. A maximum conversion efficiency (CE) value of 0.44% in 2π sr and 2% bandwidth was measured, which corresponds to a maximum in band EUV mean power of 7.7 W at a repetition rate of 6 kHz. The EUV emission was found to be stable and isotropic in these conditions. (authors)

Plasma sources for EUV lithography exposure tools

International Nuclear Information System (INIS)

Banine, Vadim; Moors, Roel

2004-01-01

The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13-14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components

Deep-etch x-ray lithography at the ALS: First results

Energy Technology Data Exchange (ETDEWEB)

Malek, C.K.; Jackson, K.H. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States); Brennen, R.A. [Jet Propulsion Lab., Pasadena, CA (United States)] [and others

1997-04-01

The fabrication of high-aspect-ratio and three-dimensional (3D) microstructures is of increasing interest in a multitude of applications in fields such as micromechanics, optics, and interconnect technology. Techniques and processes that enable lithography in thick materials differ from the planar technologies used in standard integrated circuit processing. Deep x-ray lithography permits extremely precise and deep proximity printing of a given pattern from a mask into a very thick resist. It requires a source of hard, intense, and well collimated x-ray radiation, as is provided by a synchrotron radiation source. The thick resist microstructures, so produced can be used as templates from which ultrahigh precision parts with high aspect ratios can be mass-produced out of a large variety of materials (metals, plastics, ceramics). This whole series of techniques and processes has been historically referred to as {open_quotes}LIGA,{close_quotes} from the German acronym for lithography, electroforming (Galvanoformung), and plastic molding (Abformung), the first development of the basic LIGA process having been performed at the Nuclear Research Center at Karlsruhe in Germany.

Drawing lithography for microneedles: a review of fundamentals and biomedical applications.

Science.gov (United States)

Lee, Kwang; Jung, Hyungil

2012-10-01

A microneedle is a three-dimensional (3D) micromechanical structure and has been in the spotlight recently as a drug delivery system (DDS). Because a microneedle delivers the target drug after penetrating the skin barrier, the therapeutic effects of microneedles proceed from its 3D structural geometry. Various types of microneedles have been fabricated using subtractive micromanufacturing methods which are based on the inherently planar two-dimensional (2D) geometries. However, traditional subtractive processes are limited for flexible structural microneedles and makes functional biomedical applications for efficient drug delivery difficult. The authors of the present study propose drawing lithography as a unique additive process for the fabrication of a microneedle directly from 2D planar substrates, thus overcoming a subtractive process shortcoming. The present article provides the first overview of the principal drawing lithography technology: fundamentals and biomedical applications. The continuous drawing technique for an ultrahigh-aspect ratio (UHAR) hollow microneedle, stepwise controlled drawing technique for a dissolving microneedle, and drawing technique with antidromic isolation for a hybrid electro-microneedle (HEM) are reviewed, and efficient biomedical applications by drawing lithography-mediated microneedles as an innovative drug and gene delivery system are described. Drawing lithography herein can provide a great breakthrough in the development of materials science and biotechnology. Copyright © 2012 Elsevier Ltd. All rights reserved.

Creating a Project-Based Learning Environment to Improve Project Management Skills of Graduate Students

Science.gov (United States)

Arantes do Amaral, Joao Alberto; Gonçalves, Paulo; Hess, Aurélio

2015-01-01

This article describes the project-based learning environment created to support project management graduate courses. The paper will focus on the learning context and procedures followed for 13 years, in 47 project-based learning MBA courses, involving approximately 1,400 students and 34 community partners.

Metal layer mask patterning by force microscopy lithography

International Nuclear Information System (INIS)

Filho, H.D. Fonseca; Mauricio, M.H.P.; Ponciano, C.R.; Prioli, R.

2004-01-01

The nano-lithography of a metallic surface in air by atomic force microscopy while operated in contact mode and equipped with a diamond tip is presented. The aluminum mask was prepared by thermal deposition on arsenic sulfide films. The analysis of the scratches performed by the tip on the metallic mask show that the depth of the lithographed pattern increases with the increase of the applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth and width decreases. Nano-indentations performed with the diamond tip show that the plastically deformed surface increases with the increase of the duration of the applied force. The use of the nano-lithography method to create nano-structures is discussed

V-groove plasmonic waveguides fabricated by nanoimprint lithography

DEFF Research Database (Denmark)

Fernandez-Cuesta, I.; Nielsen, R.B.; Boltasseva, Alexandra

2007-01-01

Propagation of channel plasmon-polariton modes in the bottom of a metal V groove has been recently demonstrated. It provides a unique way of manipulating light at nanometer length scale. In this work, we present a method based on nanoimprint lithography that allows parallel fabrication of integra...... of integrated optical devices composed of metal V grooves. This method represents an improvement with respect to previous works, where the V grooves were fabricated by direct milling of the metal, in terms of robustness and throughput. © 2007 American Vacuum Society......Propagation of channel plasmon-polariton modes in the bottom of a metal V groove has been recently demonstrated. It provides a unique way of manipulating light at nanometer length scale. In this work, we present a method based on nanoimprint lithography that allows parallel fabrication...

Embodied agents in virtual environments: The Aveiro project

NARCIS (Netherlands)

Leiviska, K.; Heylen, Dirk K.J.; Nijholt, Antinus; Poel, Mannes

2001-01-01

We present current and envisaged work on the AVEIRO project of our research group concerning virtual environments inhabited by autonomous embodied agents. These environments are being built for researching issues in human-computer interactions and intelligent agent applications. We describe the

A new lithography of functional plasma polymerized thin films

International Nuclear Information System (INIS)

Kim, Sung-O

2001-01-01

The preparation of the resist for the vacuum lithography was carried out by plasma polymerization. The resist manufactured by plasma polymerization is a monomer produced by MMA (Methyl methacrylate). The functional groups of MMA appeared in the PPMMA (Plasma Polymerized Methyl methacrylate) as well, and this was confirmed through an analysis using FT-IR. The polymerization rate increased as a function of the plasma power and decreased as a function of the system pressure. The sensitivity and contrast of the plasma polymerized thin films were 15 μC/cm2 and 4.3 respectively. The size of the pattern manufactured by Vacuum Lithography using the plasma polymerized thin films was 100 nm

Soft X-ray microscopy and lithography with synchrotron radiation

International Nuclear Information System (INIS)

Gudat, W.

1977-12-01

Considerable progress in the technique microscopy with soft X-ray radiation has been achieved in particular through the application of synchrotron radiation. Various methods which are currently being studied theoretically or already being used practically will be described briefly. Attention is focussed on the method of contact microscopy. Various biological specimens have been investigated by this method with a resolution as good as 100 A. X-ray lithography which in the technical procedure is very similar to contact microscopy gives promise for the fabrication of high quality submicron structures in electronic device production. Important factors limiting the resolution and determining the performance of contact microscopy and X-ray lithography will be discussed. (orig.) [de

Critical dimension and pattern size enhancement using pre-strained lithography

Energy Technology Data Exchange (ETDEWEB)

Hong, Jian-Wei [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Yang, Chung-Yuan [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Lo, Cheng-Yao, E-mail: chengyao@mx.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China)

2014-10-13

This paper proposes a non-wavelength-shortening-related critical dimension and pattern size reduction solution for the integrated circuit industry that entails generating strain on the substrate prior to lithography. Pattern size reduction of up to 49% was achieved regardless of shape, location, and size on the xy plane, and complete theoretical calculations and process steps are described in this paper. This technique can be applied to enhance pattern resolution by employing materials and process parameters already in use and, thus, to enhance the capability of outdated lithography facilities, enabling them to particularly support the manufacturing of flexible electronic devices with polymer substrates.

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Science.gov (United States)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

Nano-LED array fabrication suitable for future single photon lithography

International Nuclear Information System (INIS)

Mikulics, M; Hardtdegen, H

2015-01-01

We report on an alternative illumination concept for a future lithography based on single-photon emitters and important technological steps towards its implementation. Nano light-emitting diodes (LEDs) are chosen as the photon emitters. First, the development of their fabrication and their integration technology is presented, then their optical characteristics assessed. Last, size-controlled nano-LEDs, well positioned in an array, are electrically driven and utilized for illumination. Nanostructures are lithographically formed, demonstrating the feasibility of the approach. The potential of single-photon lithography to reach the ultimate scale limits in mass production is discussed. (paper)

Scanning probe lithography for nanoimprinting mould fabrication

International Nuclear Information System (INIS)

Luo Gang; Xie Guoyong; Zhang Yongyi; Zhang Guoming; Zhang Yingying; Carlberg, Patrick; Zhu Tao; Liu Zhongfan

2006-01-01

We propose a rational fabrication method for nanoimprinting moulds by scanning probe lithography. By wet chemical etching, different kinds of moulds are realized on Si(110) and Si(100) surfaces according to the Si crystalline orientation. The structures have line widths of about 200 nm with a high aspect ratio. By reactive ion etching, moulds with patterns free from the limitation of Si crystalline orientation are also obtained. With closed-loop scan control of a scanning probe microscope, the length of patterned lines is more than 100 μm by integrating several steps of patterning. The fabrication process is optimized in order to produce a mould pattern with a line width about 10 nm. The structures on the mould are further duplicated into PMMA resists through the nanoimprinting process. The method of combining scanning probe lithography with wet chemical etching or reactive ion etching (RIE) provides a resistless route for the fabrication of nanoimprinting moulds

Integration of multiple theories for the simulation of laser interference lithography processes.

Science.gov (United States)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-24

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Tunable atomic force microscopy bias lithography on electron beam induced carbonaceous platforms

Directory of Open Access Journals (Sweden)

Narendra Kurra

2013-09-01

Full Text Available Tunable local electrochemical and physical modifications on the carbonaceous platforms are achieved using Atomic force microscope (AFM bias lithography. These carbonaceous platforms are produced on Si substrate by the technique called electron beam induced carbonaceous deposition (EBICD. EBICD is composed of functionalized carbon species, confirmed through X-ray photoelectron spectroscopy (XPS analysis. AFM bias lithography in tapping mode with a positive tip bias resulted in the nucleation of attoliter water on the EBICD surface under moderate humidity conditions (45%. While the lithography in the contact mode with a negative tip bias caused the electrochemical modifications such as anodic oxidation and etching of the EBICD under moderate (45% and higher (60% humidity conditions respectively. Finally, reversible charge patterns are created on these EBICD surfaces under low (30% humidity conditions and investigated by means of electrostatic force microscopy (EFM.

Integration of multiple theories for the simulation of laser interference lithography processes

Science.gov (United States)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-01

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Managing Complex Distance Education Projects in a Telework Environment

Science.gov (United States)

Ally, Mohamed; Cleveland-Innes, Marti; Wiseman, Colin

2010-01-01

The advances of communication technologies have allowed professionals to work on distance education projects in a telework environment. Managers of these projects must have the skills to manage the projects from a distance. They must be able to select the appropriate team members to work on the project, orient team members, and monitor team…

3D Simulation of Nano-Imprint Lithography

DEFF Research Database (Denmark)

Román Marín, José Manuel; Rasmussen, Henrik K.; Hassager, Ole

2010-01-01

A proof of concept study of the feasibility of fully three-dimensional (3D) time-dependent simulation of nano-imprint lithography of polymer melt, where the polymer is treated as a structured liquid, has been presented. Considering the flow physics of the polymer as a structured liquid, we have...

Laser interference lithography with highly accurate interferometric alignment

NARCIS (Netherlands)

van Soest, Frank J.; van Wolferen, Hendricus A.G.M.; Hoekstra, Hugo; de Ridder, R.M.; Worhoff, Kerstin; Lambeck, Paul

It is shown experimentally that in laser interference lithography, by using a reference grating, respective grating layers can be positioned with high relative accuracy. A 0.001 degree angular and a few nanometers lateral resolution have been demonstrated.

Advanced engineering environment pilot project.

Energy Technology Data Exchange (ETDEWEB)

Schwegel, Jill; Pomplun, Alan R.; Abernathy, Rusty (Parametric Technology Corporation, Needham, MA)

2006-10-01

The Advanced Engineering Environment (AEE) is a concurrent engineering concept that enables real-time process tooling design and analysis, collaborative process flow development, automated document creation, and full process traceability throughout a product's life cycle. The AEE will enable NNSA's Design and Production Agencies to collaborate through a singular integrated process. Sandia National Laboratories and Parametric Technology Corporation (PTC) are working together on a prototype AEE pilot project to evaluate PTC's product collaboration tools relative to the needs of the NWC. The primary deliverable for the project is a set of validated criteria for defining a complete commercial off-the-shelf (COTS) solution to deploy the AEE across the NWC.

ILT optimization of EUV masks for sub-7nm lithography

Science.gov (United States)

Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

2017-06-01

The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

Development of nanostencil lithography and its applications for plasmonics and vibrational biospectroscopy

Science.gov (United States)

Aksu, Serap

Development of low cost nanolithography tools for precisely creating a variety of nanostructure shapes and arrangements in a high-throughput fashion is crucial for next generation biophotonic technologies. Although existing lithography techniques offer tremendous design flexibility, they have major drawbacks such as low-throughput and fabrication complexity. In addition the demand for the systematic fabrication of sub-100 nm structures on flexible, stretchable, non-planar nanoelectronic/photonic systems and multi-functional materials has fueled the research for innovative fabrication methods in recent years. This thesis research investigates a novel lithography approach for fabrication of engineered plasmonic nanostructures and metamaterials operating at visible and infrared wavelengths. The technique is called Nanostencil Lithography (NSL) and relies on direct deposition of materials through nanoapertures on a stencil. NSL enables high throughput fabrication of engineered antenna arrays with optical qualities similar to the ones fabricated by standard electron beam lithography. Moreover, nanostencils can be reused multiple times to fabricate series of plasmonic nanoantenna arrays with identical optical responses enabling high throughput manufacturing. Using nanostencils, very precise nanostructures could be fabricated with 10 nm accuracy. Furthermore, this technique has flexibility and resolution to create complex plasmonic nanostructure arrays on the substrates that are difficult to work with e-beam and ion beam lithography tools. Combining plasmonics with polymeric materials, biocompatible surfaces or curvilinear and non-planar objects enable unique optical applications since they can preserve normal device operation under large strain. In this work, mechanically tunable flexible optical materials and spectroscopy probes integrated on fiber surfaces that could be used for a wide range of applications are demonstrated. Finally, the first application of NSL

An approach to the relationship, environment-project-administration

International Nuclear Information System (INIS)

Angel Sanin, Enrique

1999-01-01

Interdisciplinary groups working in environmental management, have to deal with three different problems, understanding the regional environment in which the project will be implemented, estimating the environmental impacts and devising the environmental management plan (EMP). These three realities environment, project and management are loosely defined, their limits are not clear and, therefore, several things are mean by the same word. In this article, an attempt to express these three realities in a language with some mathematical rigor is presented, looking for precision in their meaning. Some pertinent conclusions regarding environmental management are derived from the mathematical attempt

Fabrication of three-dimensional millimeter-height structures using direct ultraviolet lithography on liquid-state photoresist for simple and fast manufacturing

Science.gov (United States)

Kim, Jungkwun; Yoon, Yong-Kyu

2015-07-01

A rapid three-dimensional (3-D) ultraviolet (UV) lithography process for the fabrication of millimeter-tall high aspect ratio complex structures is presented. The liquid-state negative-tone photosensitive polyurethane, LF55GN, has been directly photopatterned using multidirectionally projected UV light for 3-D micropattern formation. The proposed lithographic scheme enabled us to overcome the maximum height obtained with a photopatternable epoxy, SU8, which has been conventionally most commonly used for the fabrication of tall and high aspect ratio microstructures. Also, the fabrication process time has been significantly reduced by eliminating photoresist-baking steps. Computer-controlled multidirectional UV lithography has been employed to fabricate 3-D structures, where the UV-exposure substrate is dynamically tilt-rotating during UV exposure to create various 3-D ray traces in the polyurethane layer. LF55GN has been characterized to provide feasible fabrication conditions for the multidirectional UV lithography. Very tall structures including a 6-mm tall triangular slab and a 5-mm tall hexablaze have been successfully fabricated. A 4.5-mm tall air-lifted polymer-core bowtie monopole antenna, which is the tallest monopole structure fabricated by photolithography and subsequent metallization, has been successfully demonstrated. The antenna shows a resonant radiation frequency of 12.34 GHz, a return loss of 36 dB, and a 10 dB bandwidth of 7%.

RESEARCH ON COMPLEX, LARGE INDUSTRIAL PROJECTS IN TRANSNATIONAL ENVIRONMENT

Directory of Open Access Journals (Sweden)

Florin POPESCU

2016-12-01

Full Text Available More and more projects from different industrial sectors developed in transnational environment are becoming more characterized as "complex". In recent years, there has been much discussion and controversy about the complexity of the projects, and, despite what has been written and said in various papers, journals and professional conferences, more confusion than clarification was created, complexity of projects being interpreted differently from one author to another. Most of the literature studied is based on linear, analytical and rational approach, focusing on the size of project management planning and control and actually less on projects that are characterized as taking place and grow into a dynamic socio-human environment in a continuous change. This study represents a critical review of existing theoretical models found in literature, highlighting their limitations. The output of this literature study represents an integration of different approaches concerning complexity under one umbrella to provide a common understanding of the evolution of this concept.

Manipulation and simulations of thermal field profiles in laser heat-mode lithography

Science.gov (United States)

Wei, Tao; Wei, Jingsong; Wang, Yang; Zhang, Long

2017-12-01

Laser heat-mode lithography is a very useful method for high-speed fabrication of large-area micro/nanostructures. To obtain nanoscale pattern structures, one needs to manipulate the thermal diffusion channels. This work reports the manipulation of the thermal diffusion in laser heat-mode lithography and provides methods to restrain the in-plane thermal diffusion and improve the out-of-plane thermal diffusion. The thermal field profiles in heat-mode resist thin films have been given. It is found that the size of the heat-spot can be decreased by decreasing the thickness of the heat-mode resist thin films, inserting the thermal conduction layers, and shortening the laser irradiation time. The optimized laser writing strategy is also given, where the in-plane thermal diffusion is completely restrained and the out-of-plane thermal diffusion is improved. The heat-spot size is almost equal to that of the laser spot, accordingly. This work provides a very important guide to laser heat-mode lithography.

450mm wafer patterning with jet and flash imprint lithography

Science.gov (United States)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Silicon Nanowire Fabrication Using Edge and Corner Lithography

NARCIS (Netherlands)

Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof

2010-01-01

This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features

Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

Directory of Open Access Journals (Sweden)

Bin Fang

2015-01-01

Full Text Available We fabricate nanoscale spin-transfer oscillators (STOs by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.

A low cost high resolution pattern generator for electron-beam lithography

International Nuclear Information System (INIS)

Pennelli, G.; D'Angelo, F.; Piotto, M.; Barillaro, G.; Pellegrini, B.

2003-01-01

A simple, very low cost pattern generator for electron-beam lithography is presented. When it is applied to a scanning electron microscope, the system allows a high precision positioning of the beam for lithography of very small structures. Patterns are generated by a suitable software implemented on a personal computer, by using very simple functions, allowing an easy development of new writing strategies for a great adaptability to different user necessities. Hardware solutions, as optocouplers and battery supply, have been implemented for reduction of noise and disturbs on the voltages controlling the positioning of the beam

Feasibility of multi-walled carbon nanotube probes in AFM anodization lithography

International Nuclear Information System (INIS)

Choi, Ji Sun; Bae, Sukjong; Ahn, Sang Jung; Kim, Dal Hyun; Jung, Ki Young; Han, Cheolsu; Chung, Chung Choo; Lee, Haiwon

2007-01-01

Multi-walled carbon nanotube (CNT) tips were used in atomic force microscope (AFM) anodization lithography to investigate their advantages over conventional tips. The CNT tip required a larger threshold voltage than the mother silicon tip due to the Schottky barrier at the CNT-Si interface. Current-to-voltage curves distinguished the junction property between CNTs and mother tips. The CNT-platinum tip, which is more conductive than the CNT-silicon tip, showed promising results for AFM anodization lithography. Finally, the nanostructures with high aspect ratio were fabricated using a pulsed bias voltage technique as well as the CNT tip

EUV lithography : historical perspective and road ahead

NARCIS (Netherlands)

Banine, V.Y.

2014-01-01

Lithography, in the form of carved type printing, can be dated as far back as the 3rd century AD. Starting from the 19th century it played a major role as the basis for dissemination and preservation of knowledge in the form of printed books, maps, newspapers, etc. In the mid 20th century, with the

Report of the second workshop on synchrotron radiation sources for x-ray lithography

International Nuclear Information System (INIS)

Barton, M.Q.; Craft, B.; Williams, G.P.

1986-01-01

The reported workshop is part of an effort to implement a US-based x-ray lithography program. Presentations include designs for three storage rings (one superconducting and two conventional) and an overview of a complete lithography program. The background of the effort described, the need for synchrotron radiation, and the international competition in the area are discussed briefly. The technical feasibility of x-ray lithography is discussed, and synchrotron performance specifications and construction options are given, as well as a near-term plan. It is recommended that a prototype synchrotron source be built as soon as possible, and that a research and development plan on critical technologies which could improve cost effectiveness of the synchrotron source be established. It is further recommended that a small number of second generation prototype synchrotrons be distributed to IC manufacturing centers to expedite commercialization

Dynamic Properties of Individual Carbon Nanotube Emitters for Maskless Lithography

National Research Council Canada - National Science Library

Ribaya, Bryan P; Niemann, Darrell L; Makarewicz, Joseph; Gunther, Norman G; Nguyen, Cattien V; Rahman, Mahmud

2008-01-01

.... The individual CNT's low electron beam energy spread and high brightness values make it particularly desirable for advanced applications such as electron microscopy and electron beam lithography...

Performance of the IBM synchrotron X-ray source for lithography

International Nuclear Information System (INIS)

Archie, C.

1993-01-01

The compact superconducting synchrotron X-ray source at the IBM Advanced Lithography Facility in East Fishkill, New York has been in service to customers since the start of 1992. It availability during scheduled time is greater than 90%, with recent months frequently surpassing 95%. Data on the long-term behavior of the X-ray source properties and subsystem performance are now available. The full system continues to meet all specifications and even to surpass them in key areas. Measured electron beam properties such as beam size, short- and long-term positional stability, and beam life are presented. Lifetimes greater than 20 hours for typical stored beams have significantly simplified operations and increased availability compared to projections. This paper also describes some unique features of this X-ray source and goes beyond a discussion of downtime to describe the efforts behind the scenes to maintain and operate it

Biocompatibility of hydroxyapatite scaffolds processed by lithography-based additive manufacturing.

Science.gov (United States)

Tesavibul, Passakorn; Chantaweroad, Surapol; Laohaprapanon, Apinya; Channasanon, Somruethai; Uppanan, Paweena; Tanodekaew, Siriporn; Chalermkarnnon, Prasert; Sitthiseripratip, Kriskrai

2015-01-01

The fabrication of hydroxyapatite scaffolds for bone tissue engineering applications by using lithography-based additive manufacturing techniques has been introduced due to the abilities to control porous structures with suitable resolutions. In this research, the use of hydroxyapatite cellular structures, which are processed by lithography-based additive manufacturing machine, as a bone tissue engineering scaffold was investigated. The utilization of digital light processing system for additive manufacturing machine in laboratory scale was performed in order to fabricate the hydroxyapatite scaffold, of which biocompatibilities were eventually evaluated by direct contact and cell-culturing tests. In addition, the density and compressive strength of the scaffolds were also characterized. The results show that the hydroxyapatite scaffold at 77% of porosity with 91% of theoretical density and 0.36 MPa of the compressive strength are able to be processed. In comparison with a conventionally sintered hydroxyapatite, the scaffold did not present any cytotoxic signs while the viability of cells at 95.1% was reported. After 14 days of cell-culturing tests, the scaffold was able to be attached by pre-osteoblasts (MC3T3-E1) leading to cell proliferation and differentiation. The hydroxyapatite scaffold for bone tissue engineering was able to be processed by the lithography-based additive manufacturing machine while the biocompatibilities were also confirmed.

Kikori River basin project to sustain environment alongside development

International Nuclear Information System (INIS)

Price, J.B.; Power, A.P.; Henry, D.

1994-01-01

Protecting people and the environment is an essential design and operational criteria for the Kutubu Petroleum Development Project to minimize the physical, social and economic impacts on the local people and their environment in Papua New Guinea. This paper describes how Kutubu was implemented, and how World Wildlife Fund is assisting the neighboring communities to utilize their natural resources for long term benefit. The objectives and first year expectations of a three year integrated conservation and development project are identified, and the progress is summarized

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

International Nuclear Information System (INIS)

Li, Li; Zhang, Ziang; Yu, Miao; Song, Zhengxun; Weng, Zhankun; Wang, Zuobin; Li, Wenjun; Wang, Dapeng; Zhao, Le; Peng, Kuiqing

2015-01-01

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ 0  = 1064 nm. The minimal feature size is only several nanometers (sub λ 0 /100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser

Print-to-pattern dry film photoresist lithography

International Nuclear Information System (INIS)

Garland, Shaun P; Murphy, Terrence M Jr; Pan, Tingrui

2014-01-01

Here we present facile microfabrication processes, referred to as print-to-pattern dry film photoresist (DFP) lithography, that utilize the combined advantages of wax printing and DFP to produce micropatterned substrates with high resolution over a large surface area in a non-cleanroom setting. The print-to-pattern methods can be performed in an out-of-cleanroom environment making microfabrication much more accessible to minimally equipped laboratories. Two different approaches employing either wax photomasks or wax etchmasks from a solid ink desktop printer have been demonstrated that allow the DFP to be processed in a negative tone or positive tone fashion, respectively, with resolutions of 100 µm. The effect of wax melting on resolution and as a bonding material was also characterized. In addition, solid ink printers have the capacity to pattern large areas with high resolution, which was demonstrated by stacking DFP layers in a 50 mm × 50 mm woven pattern with 1 mm features. By using an office printer to generate the masking patterns, the mask designs can be easily altered in a graphic user interface to enable rapid prototyping. (technical note)

Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

International Nuclear Information System (INIS)

Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

2002-01-01

A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-(micro)m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented

UMTRA Project: Environment, Safety, and Health Plan

International Nuclear Information System (INIS)

1995-02-01

The US Department of Energy has prepared this UMTRA Project Environment, Safety, and Health (ES and H) Plan to establish the policy, implementing requirements, and guidance for the UMTRA Project. The requirements and guidance identified in this plan are designed to provide technical direction to UMTRA Project contractors to assist in the development and implementation of their ES and H plans and programs for UMTRA Project work activities. Specific requirements set forth in this UMTRA Project ES and H Plan are intended to provide uniformity to the UMTRA Project's ES and H programs for processing sites, disposal sites, and vicinity properties. In all cases, this UMTRA Project ES and H Plan is intended to be consistent with applicable standards and regulations and to provide guidance that is generic in nature and will allow for contractors' evaluation of site or contract-specific ES and H conditions. This plan specifies the basic ES and H requirements applicable to UMTRA Project ES and H programs and delineates responsibilities for carrying out this plan. DOE and contractor ES and H personnel are expected to exercise professional judgment and apply a graded approach when interpreting these guidelines, based on the risk of operations

Overview of ISTC projects related to the environment

International Nuclear Information System (INIS)

Meyer, U.

2002-01-01

The field of ENVIRONMENT is the largest of the 14 technology areas within the International Science and Technology Center (ISTC). As of June 2000, more than 160 environmental projects have been selected for funding; this equals about 19% of all approved ISTC projects, one of the highest of all ISTC application areas. Provided funds total about US $55 million, 22% of the ISTC's allocated budget. The statistics verify that ENVIRONMENT is the most active technical area in reviews and funding in the ISTC. In general terms, this fact documents the strong interest of the financing parties in environmental purposes and indicates their desire to support the effort in the development of improved processes and innovative technologies for the solution of urgent environmental problems and for their future prevention in the CIS. The content and objectives of the approved projects include the following topics: Radioactive Waste Treatment and Disposal, Monitoring and Instrumentation, Modeling and Risk Assessment, Remediation and Decontamination, Environmental Health and Safety, Seismic Monitoring, and Pollution of Air and Water. The projects are devoted to nuclear and nonnuclear environmental issues in similar proportion. (author)

An electron undulating ring for VLSI lithography

International Nuclear Information System (INIS)

Tomimasu, T.; Mikado, T.; Noguchi, T.; Sugiyama, S.; Yamazaki, T.

1985-01-01

The development of the ETL storage ring ''TERAS'' as an undulating ring has been continued to achieve a wide area exposure of synchrotron radiation (SR) in VLSI lithography. Stable vertical and horizontal undulating motions of stored beams are demonstrated around a horizontal design orbit of TERAS, using two small steering magnets of which one is used for vertical undulating and another for horizontal one. Each steering magnet is inserted into one of the periodic configulation of guide field elements. As one of useful applications of undulaing electron beams, a vertically wide exposure of SR has been demonstrated in the SR lithography. The maximum vertical deviation from the design orbit nCcurs near the steering magnet. The maximum vertical tilt angle of the undulating beam near the nodes is about + or - 2mrad for a steering magnetic field of 50 gauss. Another proposal is for hith-intensity, uniform and wide exposure of SR from a wiggler installed in TERAS, using vertical and horizontal undulating motions of stored beams. A 1.4 m long permanent magnet wiggler has been installed for this purpose in this April

Microfabrication of pre-aligned fiber bundle couplers using ultraviolet lithography of SU-8

OpenAIRE

Yang, Ren; Soper, Steven A.; Wang, Wanjun

2006-01-01

This paper describes the design, microfabrication and testing of a pre-aligned array of fiber couplers using direct UV-lithography of SU-8. The fiber coupler array includes an out-of-plane refractive microlens array and two fiberport collimator arrays. With the optical axis of the pixels parallel to the substrate, each pixel of the microlens array can be pre-aligned with the corresponding pixels of the fiberport collimator array as defined by the lithography mask design. This out-of-plane pol...

Structure formation in atom lithography using geometric collimation

NARCIS (Netherlands)

Meijer, T.; Beardmore, J.P.; Fabrie, C.G.C.H.M.; van Lieshout, J.P.; Notermans, R.P.M.J.W.; Sang, R.T.; Vredenbregt, E.J.D.; Leeuwen, van K.A.H.

2011-01-01

Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally

Combined electron beam and UV lithography in SU-8

DEFF Research Database (Denmark)

Gersborg-Hansen, Morten; Thamdrup, Lasse Højlund; Mironov, Andrej

2007-01-01

We present combined electron beam and UV lithography (CEUL) in SU-8 as a fast and flexible lithographic technique for prototyping of functional polymer devices and pattern transfer applications. CEUL is a lithographic technique suitable for defining both micrometer and nanometer scale features...

Imbalance aware lithography hotspot detection: a deep learning approach

Science.gov (United States)

Yang, Haoyu; Luo, Luyang; Su, Jing; Lin, Chenxi; Yu, Bei

2017-07-01

With the advancement of very large scale integrated circuits (VLSI) technology nodes, lithographic hotspots become a serious problem that affects manufacture yield. Lithography hotspot detection at the post-OPC stage is imperative to check potential circuit failures when transferring designed patterns onto silicon wafers. Although conventional lithography hotspot detection methods, such as machine learning, have gained satisfactory performance, with the extreme scaling of transistor feature size and layout patterns growing in complexity, conventional methodologies may suffer from performance degradation. For example, manual or ad hoc feature extraction in a machine learning framework may lose important information when predicting potential errors in ultra-large-scale integrated circuit masks. We present a deep convolutional neural network (CNN) that targets representative feature learning in lithography hotspot detection. We carefully analyze the impact and effectiveness of different CNN hyperparameters, through which a hotspot-detection-oriented neural network model is established. Because hotspot patterns are always in the minority in VLSI mask design, the training dataset is highly imbalanced. In this situation, a neural network is no longer reliable, because a trained model with high classification accuracy may still suffer from a high number of false negative results (missing hotspots), which is fatal in hotspot detection problems. To address the imbalance problem, we further apply hotspot upsampling and random-mirror flipping before training the network. Experimental results show that our proposed neural network model achieves comparable or better performance on the ICCAD 2012 contest benchmark compared to state-of-the-art hotspot detectors based on deep or representative machine leaning.

Durable diamond-like carbon templates for UV nanoimprint lithography

International Nuclear Information System (INIS)

Tao, L; Ramachandran, S; Nelson, C T; Overzet, L J; Goeckner, M; Lee, G; Hu, W; Lin, M; Willson, C G; Wu, W

2008-01-01

The interaction between resist and template during the separation process after nanoimprint lithography (NIL) can cause the formation of defects and damage to the templates and resist patterns. To alleviate these problems, fluorinated self-assembled monolayers (F-SAMs, i.e. tridecafluoro-1,1,2,2,tetrahydrooctyl trichlorosilane or FDTS) have been employed as template release coatings. However, we find that the FDTS coating undergoes irreversible degradation after only 10 cycles of UV nanoimprint processes with SU-8 resist. The degradation includes a 28% reduction in surface F atoms and significant increases in the surface roughness. In this paper, diamond-like carbon (DLC) films were investigated as an alternative material not only for coating but also for direct fabrication of nanoimprint templates. DLC films deposited on quartz templates in a plasma enhanced chemical vapor deposition system are shown to have better chemical and physical stability than FDTS. After the same 10 cycles of UV nanoimprints, the surface composition as well as the roughness of DLC films were found to be unchanged. The adhesion energy between the DLC surface and SU-8 is found to be smaller than that of FDTS despite the slightly higher total surface energy of DLC. DLC templates with 40 nm features were fabricated using e-beam lithography followed by Cr lift-off and reactive ion etching. UV nanoimprinting using the directly patterned DLC templates in SU-8 resist demonstrates good pattern transfer fidelity and easy template-resist separation. These results indicate that DLC is a promising material for fabricating durable templates for UV nanoimprint lithography

Effects of synchrotron radiation spectrum energy on polymethyl methacrylate photosensitivity to deep x-ray lithography

International Nuclear Information System (INIS)

Mekaru, Harutaka; Utsumi, Yuichi; Hattori, Tadashi

2003-01-01

Since X-ray lithography requires a high photon flux to achieve deep resist exposure, a synchrotron radiation beam, which is not monochromatized, is generally used as a light source. If the synchrotron radiation beam is monochromatized, photon flux will decrease rapidly. Because of this reason, the wavelength dependence of the resist sensitivity has not been investigated for deep X-ray lithography. Measuring the spectrum of a white beam with a Si solid-state detector (SSD) is difficult because a white beam has a high intensity and an SSD has a high sensitivity. We were able to measure the spectrum and the photocurrent of a white beam from a beam line used for deep X-ray lithography by keeping the ring current below 0.05 mA. We evaluated the characteristics of the output beam based on the measured spectrum and photocurrent, and used them to investigate the relationship between the total exposure energy and the dose-processing depth with polymethyl methacrylate (PMMA). We found that it is possible to guess the processing depth of PMMA from the total exposure energy in deep X-ray lithography. (author)

The application of phase grating to CLM technology for the sub-65nm node optical lithography

Science.gov (United States)

Yoon, Gi-Sung; Kim, Sung-Hyuck; Park, Ji-Soong; Choi, Sun-Young; Jeon, Chan-Uk; Shin, In-Kyun; Choi, Sung-Woon; Han, Woo-Sung

2005-06-01

As a promising technology for sub-65nm node optical lithography, CLM(Chrome-Less Mask) technology among RETs(Resolution Enhancement Techniques) for low k1 has been researched worldwide in recent years. CLM has several advantages, such as relatively simple manufacturing process and competitive performance compared to phase-edge PSM's. For the low-k1 lithography, we have researched CLM technique as a good solution especially for sub-65nm node. As a step for developing the sub-65nm node optical lithography, we have applied CLM technology in 80nm-node lithography with mesa and trench method. From the analysis of the CLM technology in the 80nm lithography, we found that there is the optimal shutter size for best performance in the technique, the increment of wafer ADI CD varied with pattern's pitch, and a limitation in patterning various shapes and size by OPC dead-zone - OPC dead-zone in CLM technique is the specific region of shutter size that dose not make the wafer CD increased more than a specific size. And also small patterns are easily broken, while fabricating the CLM mask in mesa method. Generally, trench method has better optical performance than mesa. These issues have so far restricted the application of CLM technology to a small field. We approached these issues with 3-D topographic simulation tool and found that the issues could be overcome by applying phase grating in trench-type CLM. With the simulation data, we made some test masks which had many kinds of patterns with many different conditions and analyzed their performance through AIMS fab 193 and exposure on wafer. Finally, we have developed the CLM technology which is free of OPC dead-zone and pattern broken in fabrication process. Therefore, we can apply the CLM technique into sub-65nm node optical lithography including logic devices.

Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

KAUST Repository

Wan, Weiwei; Lin, Liang; Xu, Yelong; Guo, Xu; Liu, Xiaoping; Ge, Haixiong; Lu, Minghui; Cui, Bo; Chen, Yanfeng

2014-01-01

manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage

Project communication management in complex environments

CERN Document Server

Ying, Zhong

2014-01-01

This unique book that deals with project communication management in complex environments, taking a leaf from China’s experience with a major earthquake in Sichuan, would be a timely contribution to fill this lacuna. Readers would be able to understand how companies and organizations that are unprepared for crisis management would react to their detriment. The lessons provided in this book are the only one of its kind to highlight the lessons for companies and organizations to prepare themselves for successful project communication management through the complexity-informed framework. Although the book is written by two building professionals, the concepts and lessons presented are generic and equally applicable for businesses outside of the construction industry; for example, for airports, resorts, hotels, shipyards, etc.

Fabrication of nanoparticle and protein nanostructures using nanoimprint lithography

NARCIS (Netherlands)

Maury, P.A.

2007-01-01

Nanoimprint lithography (NIL) was used as a tool to pattern self-assembled monolayers (SAMs) on silicon substrates because of its ability to pattern in the micrometer and nanometer ranges. The resulting polymer template behaved as a physical barrier preventing the formation of a SAM in the covered

Integrated Environment and Safety and Health Management System (ISMS) Implementation Project Plan

Energy Technology Data Exchange (ETDEWEB)

MITCHELL, R.L.

2000-01-10

The Integrated Environment, Safety and Health Management System (ISMS) Implementation Project Plan serves as the project document to guide the Fluor Hanford, Inc (FHI) and Major Subcontractor (MSC) participants through the steps necessary to complete the integration of environment, safety, and health into management and work practices at all levels.

Integrated Environment and Safety and Health Management System (ISMS) Implementation Project Plan

International Nuclear Information System (INIS)

MITCHELL, R.L.

2000-01-01

The Integrated Environment, Safety and Health Management System (ISMS) Implementation Project Plan serves as the project document to guide the Fluor Hanford, Inc (FHI) and Major Subcontractor (MSC) participants through the steps necessary to complete the integration of environment, safety, and health into management and work practices at all levels

The fabrication of nanopatterns with Au nanoparticles-embedded micelles via nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Pil; Kim, Eun-Uk; Koh, Haeng-Deog; Kang, Nam-Goo; Jung, Gun-Young; Lee, Jae-Suk, E-mail: gyjung@gist.ac.k, E-mail: jslee@gist.ac.k [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu Gwangju 500-712 (Korea, Republic of)

2009-09-09

We fabricated nanopatterns with Au nanoparticles-embedded micelles (Au-micelles) by self-assembly of block copolymers via nanoimprint lithography. The micelle structure prepared by self-assembled block copolymers was used as a template for the synthesis of Au nanoparticles (Au NPs). Au NPs were synthesized in situ inside the micelles of polystyrene-block-poly(2-vinylpyridine) (PS- b-P2VP). Au-micelles were arranged on the trenches of the polymer template, which was imprinted by nanoimprint lithography. The fabrication of line-type and dot-type nanopatterns was carried out by the combined method. In addition, multilayer nanopatterns of the Au-micelles were also proposed.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

Science.gov (United States)

Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hori, Masafumi; Gronheid, Roel

2017-04-01

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

Evaluating Students' Perceptions and Attitudes toward Computer-Mediated Project-Based Learning Environment: A Case Study

Science.gov (United States)

Seet, Ling Ying Britta; Quek, Choon Lang

2010-01-01

This research investigated 68 secondary school students' perceptions of their computer-mediated project-based learning environment and their attitudes towards Project Work (PW) using two instruments--Project Work Classroom Learning Environment Questionnaire (PWCLEQ) and Project Work Related Attitudes Instrument (PWRAI). In this project-based…

Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

Science.gov (United States)

Martin, Luc; Manakli, Serdar; Bayle, Sebastien; Belledent, Jérôme; Soulan, Sebastien; Wiedemann, Pablo; Farah, Abdi; Schiavone, Patrick

2012-03-01

Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria; MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between

Single-mode solid-state polymer dye laser fabricated with standard I-line UV lithography

DEFF Research Database (Denmark)

Balslev, Søren; Mironov, Andrej; Nilsson, Daniel

2005-01-01

We present single-mode solid-state polymer dye lasers fabricated with standard UV lithography. The lasers use a high-order Bragg grating and rely on index-tuning of a photosensitive polymer for waveguiding. The gain medium is Rhodamine 6G.......We present single-mode solid-state polymer dye lasers fabricated with standard UV lithography. The lasers use a high-order Bragg grating and rely on index-tuning of a photosensitive polymer for waveguiding. The gain medium is Rhodamine 6G....

High Excitation Efficiency of Channel Plasmon Polaritons in Tailored, UV-Lithography-Defined V-Grooves

DEFF Research Database (Denmark)

Smith, Cameron; Thilsted, Anil Haraksingh; Garcia-Ortiz, Cesar E.

2014-01-01

We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and crystallographic silicon etching. The V-shape is tailored by thermal oxidation to support confined CPPs.......We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and crystallographic silicon etching. The V-shape is tailored by thermal oxidation to support confined CPPs....

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

International Nuclear Information System (INIS)

Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

2007-01-01

Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

ENVIRONMENT PROTECTION AND ENVIRONMENT MONITORING ISSUES IN THE PROJECTS OF SUBGLACIAL LAKES STUDIES IN ANTARCTICA

Directory of Open Access Journals (Sweden)

I. A. Alekhina

2012-01-01

Full Text Available Antarctic subglacial lakes can represent extreme natural habitats for microorganisms from the position of their evolution and adaptation, as well as they can contain the information on Antarctic ice sheet history and climatic changes in their sediments. Now only direct measurements and sampling from these habitats can answer on many fundamental questions. Special precaution should be complied at penetration into these unique relic environments without unfavorable impacts and contamination. A number of recommendations were developed on levels of cleanliness and sterility during direct exploration and research of subglacial environments. Documents considered in the article are the first and necessary steps for appropriate and long-term ecological management of subglacial Antarctic environments. Today there are three projects of subglacial aquatic environment research which are in preparation and realization – the Russian project of Lake Vostok, the similar British project of Lake Ellsworth and the American project on Whillans Ice Stream. The programs of ecological stewardship for direct exploration of these lakes are discussed. All these subglacial aquatic objects of further exploration and research are so various on their structure, age and regime, that only results of all programs as a whole can help to draw us a uniform picture of a subglacial ecological system. Ecological stewardship of these should provide the minimal ecological impact with maximal scientific results. On the basis of existing documents and recommendations the general approaches and the program of ecological stewardship for Lake Vostok research are discussed. Study of drilling fluid, drilling chips, Vostok ice core and the fresh frozen water will allow to make an assessment of biological and chemical contamination as a result of the first penetration and to modify the further stewardship program for the second penetration and direct exploration of lake water.

Large-solid-angle illuminators for extreme ultraviolet lithography with laser plasmas

International Nuclear Information System (INIS)

Kubiak, G.D.; Tichenor, D.A.; Sweatt, W.C.; Chow, W.W.

1995-06-01

Laser Plasma Sources (LPSS) of extreme ultraviolet radiation are an attractive alternative to synchrotron radiation sources for extreme ultraviolet lithography (EUVL) due to their modularity, brightness, and modest size and cost. To fully exploit the extreme ultraviolet power emitted by such sources, it is necessary to capture the largest possible fraction of the source emission half-sphere while simultaneously optimizing the illumination stationarity and uniformity on the object mask. In this LDRD project, laser plasma source illumination systems for EUVL have been designed and then theoretically and experimentally characterized. Ellipsoidal condensers have been found to be simple yet extremely efficient condensers for small-field EUVL imaging systems. The effects of aberrations in such condensers on extreme ultraviolet (EUV) imaging have been studied with physical optics modeling. Lastly, the design of an efficient large-solid-angle condenser has been completed. It collects 50% of the available laser plasma source power at 14 nm and delivers it properly to the object mask in a wide-arc-field camera

Programmable imprint lithography template

Science.gov (United States)

Cardinale, Gregory F [Oakland, CA; Talin, Albert A [Livermore, CA

2006-10-31

A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

Plasmonic Lithography Utilizing Epsilon Near Zero Hyperbolic Metamaterial.

Science.gov (United States)

Chen, Xi; Zhang, Cheng; Yang, Fan; Liang, Gaofeng; Li, Qiaochu; Guo, L Jay

2017-10-24

In this work, a special hyperbolic metamaterial (HMM) metamaterial is investigated for plasmonic lithography of period reduction patterns. It is a type II HMM (ϵ ∥ 0) whose tangential component of the permittivity ϵ ∥ is close to zero. Due to the high anisotropy of the type II epsilon-near-zero (ENZ) HMM, only one plasmonic mode can propagate horizontally with low loss in a waveguide system with ENZ HMM as its core. This work takes the advantage of a type II ENZ HMM composed of aluminum/aluminum oxide films and the associated unusual mode to expose a photoresist layer in a specially designed lithography system. Periodic patterns with a half pitch of 58.3 nm were achieved due to the interference of third-order diffracted light of the grating. The lines were 1/6 of the mask with a period of 700 nm and ∼1/7 of the wavelength of the incident light. Moreover, the theoretical analyses performed are widely applicable to structures made of different materials such as silver as well as systems working at deep ultraviolet wavelengths including 193, 248, and 365 nm.

Web Environments for Group-Based Project Work in Higher Education

NARCIS (Netherlands)

Andernach, J.A.; van Diepen, N.M.; Collis, Betty; Andernach, Toine

1997-01-01

We discuss problems confronting the use of group-based project work as an instructional strategy in higher education and describe two courses in which course-specific World Wide Web (Web) environments have evolved over a series of course sequences and are used both as tool environments for

Development of compact synchrotron light source LUNA for x-ray lithography

International Nuclear Information System (INIS)

Takahashi, M.; Mandai, S.; Hoshi, Y.; Kohno, Y.

1992-01-01

A compact synchrotron light source LUNA has been developed by Ishikawajima-Harima Heavy Industries Co., Ltd. (IHI), especially for x-ray lithography. It consists of a 45-MeV linac as an electron injector and an 800-MeV synchrotron. The peak wavelength of synchrotron radiation is around 10 A. The installation of LUNA was completed in April 1989 at the Tsuchiura Facility of IHI. The synchrotron radiation was first observed in December 1989. A stored beam current of 50 mA at 800 MeV and a lifetime over 1 h have been achieved. At present, experiments are still continuing to increase the stored current and the lifetime. X-ray lithography testing is scheduled to begin in a clean room in this facility. This paper describes the outline of LUNA and the present status

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.

Science.gov (United States)

Cummins, Cian; Bell, Alan P; Morris, Michael A

2017-09-30

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO₃) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP soft template. We outline WO₃ nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO₃ nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography

Directory of Open Access Journals (Sweden)

Cian Cummins

2017-09-01

Full Text Available The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP feature patterning. An elegant route is demonstrated using directed self-assembly (DSA of BCPs for the fabrication of aligned tungsten trioxide (WO3 nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL silsesquioxane (SSQ-based trenches were utilized in order to align a cylinder forming poly(styrene-block-poly(4-vinylpyridine (PS-b-P4VP BCP soft template. We outline WO3 nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm contacted WO3 nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

Inspection of imprint lithography patterns for semiconductor and patterned media

Science.gov (United States)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

The DARPA compact Superconducting X-Ray Lithography Source features

International Nuclear Information System (INIS)

Heese, R.; Kalsi, S.; Leung, E.

1991-01-01

Under DARPA sponsorship, a compact Superconducting X-Ray Lithography Source (SXLS) is being designed and built by the Brookhaven National Laboratory (BNL) with industry participation from Grumman Corporation and General Dynamics. This source is optimized for lithography work for sub-micron high density computer chips, and is about the size of a billiard table (1.5 m x 4.0 m). The machine has a racetrack configuration with two 180 degree bending magnets being designed and built by General Dynamics under a subcontract with Grumman Corporation. The machine will have 18 photon ports which would deliver light peaked at a wave length of 10 Angstroms. Grumman is commercializing the SXLS device and plans to book orders for delivery of industrialized SXLS (ISXLS) versions in 1995. This paper will describe the major features of this device. The commercial machine will be equipped with a fully automated user-friendly control systems, major features of which are already working on a compact warm dipole ring at BNL. This ring has normal dipole magnets with dimensions identical to the SXLS device, and has been successfully commissioned

Mask Materials and Designs for Extreme Ultra Violet Lithography

Science.gov (United States)

Kim, Jung Sik; Ahn, Jinho

2018-03-01

Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

Integration of plant viruses in electron beam lithography nanostructures

International Nuclear Information System (INIS)

Alonso, Jose M; Bittner, Alexander M; Ondarçuhu, Thierry

2013-01-01

Tobacco mosaic virus (TMV) is the textbook example of a virus, and also of a self-assembling nanoscale structure. This tubular RNA/protein architecture has also found applications as biotemplate for the synthesis of nanomaterials such as wires, as tubes, or as nanoparticle assemblies. Although TMV is, being a biological structure, quite resilient to environmental conditions (temperature, chemicals), it cannot be processed in electron beam lithography (eBL) fabrication, which is the most important and most versatile method of nanoscale structuring. Here we present adjusted eBL-compatible processes that allow the incorporation of TMV in nanostructures made of positive and negative tone eBL resists. The key steps are covering TMV by polymer resists, which are only heated to 50 °C, and development (selective dissolution) in carefully selected organic solvents. We demonstrate the post-lithography biochemical functionality of TMV by selective immunocoating of the viral particles, and the use of immobilized TMV as direct immunosensor. Our modified eBL process should be applicable to incorporate a wide range of sensitive materials in nanofabrication schemes. (paper)

CAMCE: An Environment to Support Multimedia Courseware Projects.

Science.gov (United States)

Barrese, R. M.; And Others

1992-01-01

Presents results of CAMCE (Computer-Aided Multimedia Courseware Engineering) project research concerned with definition of a methodology to describe a systematic approach for multimedia courseware development. Discussion covers the CAMCE methodology, requirements of an advanced authoring environment, use of an object-based model in the CAMCE…

Eco-friendly electron beam lithography using water-developable resist material derived from biomass

Science.gov (United States)

Takei, Satoshi; Oshima, Akihiro; Wakabayashi, Takanori; Kozawa, Takahiro; Tagawa, Seiichi

2012-07-01

We investigated the eco-friendly electron beam (EB) lithography using a high-sensitive negative type of water-developable resist material derived from biomass on hardmask layer for tri-layer processes. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. The images of 200 nm line and 800 nm space pattern with exposure dose of 7.0 μC/cm2 and CF4 etching selectivity of 2.2 with hardmask layer were provided by specific process conditions.

Examination for optimization of synchrotron radiation spectrum for the x ray depth lithography

Science.gov (United States)

Dany, Raimund

1992-06-01

The effect of reducing the vertical distribution of synchrotron radiation on its spectral distribution is examined through resin irradiation. The resulting filter effect is compared to that of absorption filters. Transmission coefficients of titanium, gold, and polyamide were calculated from linear absorption coefficients with the Beer law. The use of a diaphragm in X-ray depth lithography, which is the first step of the LIGA (Lithography Galvanoforming Molding) process, is discussed. A calorimetric device for determining the synchrotron radiation power and distribution was developed and tested. Measurements at the ELSA storage ring show a strong dependence of the vertical emittance on the electron current.

„New approaches to atomic force microscope lithography on silicon"

DEFF Research Database (Denmark)

Birkelund, Karen; Thomsen, Erik Vilain; Rasmussen, Jan Pihl

1997-01-01

We have investigated new approaches to the formation of conducting nanowires on crystalline silicon surfaces using atomic force microscope (AFM) lithography. To increase processing speed and reduce wear of the AFM tip, large-scale structures are formed with a direct laser write setup, while the AFM...

High-quality global hydrogen silsequioxane contact planarization for nanoimprint lithography

NARCIS (Netherlands)

Büyükköse, S.; Vratzov, Boris; van der Wiel, Wilfred Gerard

2011-01-01

The authors present a novel global contact planarization technique based on the spin-on-glass material hydrogen silsequioxane (HSQ) and demonstrate its excellent performance on patterns of 70 nm up to several microns generated by UV-based nanoimprint lithography. The HSQ layer (∼165 nm) is spin

Reverse pattern duplication utilizing a two-step metal lift-off process via nanoimprint lithography

International Nuclear Information System (INIS)

Song, Sun-Sik; Kim, Eun-Uk; Jung, Hee-Soo; Kim, Ki-Seok; Jung, Gun-Young

2009-01-01

A two-step metal lift-off process using a selective etching recipe was demonstrated as a new technique for the reverse pattern fabrication of the features of a master stamp via a UV-based nanoimprint lithography technique. A transparent master stamp with repeated pillars (150 nm diameter at 300 nm pitch) was fabricated by using laser interference lithography and the subsequent dry-etching process. After nanoimprint lithography and the following gold (Au) lift-off process, the corresponding gold dots (20 nm height) were generated. A thin chromium layer (Cr, 5 nm) was then deposited and subjected to the aqua regia solution, which dissolved only Au dots. By using a selective wet etching recipe between gold (Au) and chromium (Cr) materials, a Cr layer with holes was reliably generated, which was used as an etching mask to transfer holes into the silicon substrate in the subsequent dry-etching process. Hole patterns with a diameter of 146 nm were inversely replicated faithfully from the master stamp with the corresponding pillars without a notable feature size distortion

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

International Nuclear Information System (INIS)

Song, Jingfeng; Lu, Haidong; Gruverman, Alexei; Ducharme, Stephen; Li, Shumin; Tan, Li

2016-01-01

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics. (paper)

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

Science.gov (United States)

Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

2016-01-08

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

Resolution Improvement and Pattern Generator Development for the Maskless Micro-Ion-Beam Reduction Lithography System

International Nuclear Information System (INIS)

Jiang, Ximan

2006-01-01

The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

International Nuclear Information System (INIS)

Brose, S.; Danylyuk, S.; Juschkin, L.; Dittberner, C.; Bergmann, K.; Moers, J.; Panaitov, G.; Trellenkamp, St.; Loosen, P.; Grützmacher, D.

2012-01-01

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm). The masks and filters with free standing areas up to 1000 × 1000 μm 2 and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. - Highlights: ► Broadband transmission masks for EUV proximity and interference lithography. ► Technology for free standing niobium membranes with areas up to 1 mm 2 . ► High density patterns with periods of 100 nm and structure sizes below 40 nm. ► Measured diffraction efficiency at 11 nm is in agreement with the theory. ► Produced masks can be effectively used with wavelengths between 6 nm and 17 nm.

[Nuclear energy and environment: review of the IAEA environmental projects].

Science.gov (United States)

Fesenko, S; Fogt, G

2012-01-01

The review of the environmental projects of the International Atomic Energy Agency is presented. Basic IAEA documents intended to protect humans and the Environment are considered and their main features are discussed. Some challenging issues in the area of protection of the Environment and man, including the impact of nuclear facilities on the environment, radioactive waste management, and remediation of the areas affected by radiological accidents, nuclear testing and sites of nuclear facilities are also discussed. The need to maintain the existing knowledge in radioecology and protection of the environment is emphasised.

Fast thermal nanoimprint lithography by a stamp with integrated heater

DEFF Research Database (Denmark)

Tormen, Massimo; Malureanu, Radu; Pedersen, Rasmus Haugstrup

2008-01-01

We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz...

Linear Fresnel zone plate based two-state alignment system for 0.25 micron x-ray lithography

International Nuclear Information System (INIS)

Chen, G.

1993-01-01

X-ray lithography has proven to be a cost effective and promising technique for fabricating Integrated Circuits (ICs) with minimum feature sizes of less than 0.25 μm. Since IC fabrication is a multilevel process, to preserve the functionality of devices, circuit patterns printed at each lithography level must match existing patterns on the wafer with an accuracy of less than 1/3 ∼ 1/5 of the minimum feature size. An alignment system is used to position the mask relative to the wafer so that mask circuit patterns can be printed on the wafer at the designed position. As the minimum printed feature size shrinks, the overlay requirements of a lithography tool become more stringent. A stepper for 0.25 μm feature device fabrication requires an overlay accuracy of 0.075 μm, of which only 0.05 μm (mean + 3σ) is allocated to its alignment system. This thesis presents the development of a linear Fresnel zone late based two-state alignment (TSA) method for a 0.25 μm x-ray lithography tool. The authors first analyze the overlay requirement in a lithography process and the error allocation to the alignment system for a 0.25 μ feature x-ray lithography tool. They then describe the principle of the two-state alignment, its computer simulation and the optimal alignment mark design. They carried out an optical bench test for the one-axes alignment setup and experimentally evaluated the performance of the system. They developed a three-axes TSA system and integrated the system with the ES-3 x-ray beamline to construct the CXrL aligner, an experimental x-ray exposure system in CXrL. They measured the alignment accuracy of the exposure system to be better than 0.035 μm (3σ) on both metal and dielectric alignment mark substrates. They also studied the effect of processing coatings on the alignment signal with different wafer mark substrates. They successfully printed the 0.5 μm gate level patterns for the first NMOS test chip at CXrL

Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

Energy Technology Data Exchange (ETDEWEB)

Duan Huigao; Zhao Jianguo; Zhang Yongzhe; Xie Erqing [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Han Li [Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)], E-mail: duanhg@gmail.com, E-mail: xieeq@lzu.edu.cn

2009-04-01

The overexposure process of poly(methyl methacrylate) (PMMA) was studied in detail using electron-beam lithography. It was found that PMMA films could be directly patterned without development due to the electron-beam-induced collapse of PMMA macromolecular chains. By analyzing the evolution of surface morphologies and compositions of the overexposed PMMA films, it was also found that the transformation of PMMA from positive to negative resist was a carbonization process, so patterned carbonaceous nanostructures could be prepared directly by overexposure of PMMA using electron-beam lithography. This simple one-step process for directly obtaining patterned carbonaceous nanostructures has promising potential application as a tool to make masks and templates, nanoelectrodes, and building blocks for MEMS and nanophotonic devices.

Programmable lithography engine (ProLE) grid-type supercomputer and its applications

Science.gov (United States)

Petersen, John S.; Maslow, Mark J.; Gerold, David J.; Greenway, Robert T.

2003-06-01

There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry and physics along with substrate, exposure, and all post-exposure processing must be considered too. Only a holistic approach to finding imaging solutions will accelerate yield and maximize performance. Since experiments are too costly in both time and money, accomplishing this takes massive amounts of accurate simulation capability. Our solution is to create a workbench that has a set of advanced user applications that utilize best-in-class simulator engines for solving litho-related DFM problems using distributive computing. Our product, ProLE (Programmable Lithography Engine), is an integrated system that combines Petersen Advanced Lithography Inc."s (PAL"s) proprietary applications and cluster management software wrapped around commercial software engines, along with optional commercial hardware and software. It uses the most rigorous lithography simulation engines to solve deep sub-wavelength imaging problems accurately and at speeds that are several orders of magnitude faster than current methods. Specifically, ProLE uses full vector thin-mask aerial image models or when needed, full across source 3D electromagnetic field simulation to make accurate aerial image predictions along with calibrated resist models;. The ProLE workstation from Petersen Advanced Lithography, Inc., is the first commercial product that makes it possible to do these intensive calculations at a fraction of a time previously available thus significantly reducing time to market for advance technology devices. In this work, ProLE is introduced, through model comparison to show why vector imaging and rigorous resist models work better than other less rigorous models, then some applications of that use our distributive computing solution are shown

Surface enhanced thermo lithography

KAUST Repository

Coluccio, Maria Laura

2017-01-13

We used electroless deposition to fabricate clusters of silver nanoparticles (NPs) on a silicon substrate. These clusters are plasmonics devices that induce giant electromagnetic (EM) field increments. When those EM field are absorbed by the metal NPs clusters generate, in turn, severe temperature increases. Here, we used the laser radiation of a conventional Raman set-up to transfer geometrical patterns from a template of metal NPs clusters into a layer of thermo sensitive Polyphthalaldehyde (PPA) polymer. Temperature profile on the devices depends on specific arrangements of silver nanoparticles. In plane temperature variations may be controlled with (i) high nano-meter spatial precision and (ii) single Kelvin temperature resolution on varying the shape, size and spacing of metal nanostructures. This scheme can be used to generate strongly localized heat amplifications for applications in nanotechnology, surface enhanced thermo-lithography (SETL), biology and medicine (for space resolved cell ablation and treatment), nano-chemistry.

Surface enhanced thermo lithography

KAUST Repository

Coluccio, Maria Laura; Alabastri, Alessandro; Bonanni, Simon; Majewska, Roksana; Dattoli, Elisabetta; Barberio, Marianna; Candeloro, Patrizio; Perozziello, Gerardo; Mollace, Vincenzo; Di Fabrizio, Enzo M.; Gentile, Francesco

2017-01-01

We used electroless deposition to fabricate clusters of silver nanoparticles (NPs) on a silicon substrate. These clusters are plasmonics devices that induce giant electromagnetic (EM) field increments. When those EM field are absorbed by the metal NPs clusters generate, in turn, severe temperature increases. Here, we used the laser radiation of a conventional Raman set-up to transfer geometrical patterns from a template of metal NPs clusters into a layer of thermo sensitive Polyphthalaldehyde (PPA) polymer. Temperature profile on the devices depends on specific arrangements of silver nanoparticles. In plane temperature variations may be controlled with (i) high nano-meter spatial precision and (ii) single Kelvin temperature resolution on varying the shape, size and spacing of metal nanostructures. This scheme can be used to generate strongly localized heat amplifications for applications in nanotechnology, surface enhanced thermo-lithography (SETL), biology and medicine (for space resolved cell ablation and treatment), nano-chemistry.

Fabrication of biomimetic dry-adhesion structures through nanosphere lithography

Science.gov (United States)

Kuo, P. C.; Chang, N. W.; Suen, Y.; Yang, S. Y.

2018-03-01

Components with surface nanostructures suitable for biomimetic dry adhesion have a great potential in applications such as gecko tape, climbing robots, and skin patches. In this study, a nanosphere lithography technique with self-assembly nanospheres was developed to achieve effective and efficient fabrication of dry-adhesion structures. Self-assembled monolayer nanospheres with high regularity were obtained through tilted dip-coating. Reactive-ion etching of the self-assembled nanospheres was used to fabricate nanostructures of different shapes and aspect ratios by varying the etching time. Thereafter, nickel molds with inverse nanostructures were replicated using the electroforming process. Polydimethylsiloxane (PDMS) nanostructures were fabricated through a gas-assisted hot-embossing method. The pulling test was performed to measure the shear adhesion on the glass substrate of a sample, and the static contact angle was measured to verify the hydrophobic property of the structure. The enhancement of the structure indicates that the adhesion force increased from 1.2 to 4.05 N/cm2 and the contact angle increased from 118.6° to 135.2°. This columnar structure can effectively enhance the adhesion ability of PDMS, demonstrating the potential of using nanosphere lithography for the fabrication of adhesive structures.

Fabrication of biopolymer cantilevers using nanoimprint lithography

DEFF Research Database (Denmark)

Keller, Stephan Sylvest; Feidenhans'l, Nikolaj Agentoft; Fisker-Bødker, Nis

2011-01-01

The biodegradable polymer poly(l-lactide) (PLLA) was introduced for the fabrication of micromechanical devices. For this purpose, thin biopolymer films with thickness around 10 μm were spin-coated on silicon substrates. Patterning of microcantilevers is achieved by nanoimprint lithography. A major...... challenge was the high adhesion between PLLA and silicon stamp. Optimized stamp fabrication and the deposition of a 125 nm thick fluorocarbon anti-stiction coating on the PLLA allowed the fabrication of biopolymer cantilevers. Resonance frequency measurements were used to estimate the Young’s modulus...

Photoinhibition superresolution lithography

Science.gov (United States)

Forman, Darren Lawrence

While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

Peer Feedback to Facilitate Project-Based Learning in an Online Environment

Science.gov (United States)

Ching, Yu-Hui; Hsu, Yu-Chang

2013-01-01

There has been limited research examining the pedagogical benefits of peer feedback for facilitating project-based learning in an online environment. Using a mixed method approach, this paper examines graduate students' participation and perceptions of peer feedback activity that supports project-based learning in an online instructional design…

Domestic offset projects in the built environment

Energy Technology Data Exchange (ETDEWEB)

Oikonomou, V.; Spijker, E.; Van der Gaast, W. [Joint Implementation Network, Laan Corpus den Hoorn 300, 9728JT Groningen (Netherlands); Flamos, A.; Spyridaki, N.A. [Department of Industrial Management, University of Piraeus, Karaoli and Dimitriou 80 Str, 185 34 Piraeus (Greece)

2012-08-15

Emission reduction activities in the European Union (EU) in- and outside the European Trading System (ETS) thus far have largely taken place separately. One possibility to combine the two is through linking Non-ETS offset project-based crediting schemes in the form of Joint Implementation or domestic offset (DO) projects with the EU ETS. Linking would allow non-ETS offset project-based CO2 credits to be traded within the ETS market. This paper discusses the merits and drawbacks of the implementation of a DO scheme in the built environment in the Netherlands. The built environment can be characterised as a sector with a great diversity and significant energy savings potential. Emphasis is paid on the modalities for estimating energy savings under DO projects. The authors discuss if next to existing EU, national or regional policies in the Netherlands, DO could spur initiatives in sub-sectors or market areas that are difficult to reach with conventional policy instruments. Thus, despite the existing policy framework in this sector, there could be still space for DO to reach the untapped energy savings potential. DO can support activities and technologies that are not covered by other policy instruments, either because they are not part of the instruments focus or are above the minimum requirements of the incumbent policy targets. It is expected that some lessons from this study in the Netherlands can be taken into account also by other countries facing similar market circumstances, which have implemented several policy instruments and are considering DO schemes as an alternative for capturing part of the untapped energy saving potential in their end use sectors. Another possible advantage of DO is that it has the potential to reduce public spending on existing policy goals, when it is considered in conjunction with existing public financing instruments. In order to tap into this potential, there are a series of hurdles in place, like additionality and the current CO2

Human-Robot Teamwork in USAR Environments: The TRADR Project

NARCIS (Netherlands)

Greeff, J. de; Hindriks, K.; Neerincx, M.A.; Kruijff-Korbayova, I.

2015-01-01

The TRADR project aims at developing methods and models for human-robot teamwork, enabling robots to operate in search and rescue environments alongside humans as teammates, rather than as tools. Through a user-centered cognitive engineering method, human-robot teamwork is analyzed, modeled,

Managing large energy and mineral resources (EMR) projects in challenging environments

Science.gov (United States)

Chanmeka, Arpamart

The viability of energy mineral resources (EMR) construction projects is contingent upon the state of the world economic climate. Oil sands projects in Alberta, Canada exemplify large EMR projects that are highly sensitive to fluctuations in the world market. Alberta EMR projects are constrained by high fixed production costs and are also widely recognized as one of the most challenging construction projects to successfully deliver due to impacts from extreme weather conditions, remote locations and issues with labor availability amongst others. As indicated in many studies, these hardships strain the industry's ability to execute work efficiently, resulting in declining productivity and mounting cost and schedule overruns. Therefore, to enhance the competitiveness of Alberta EMR projects, project teams are targeting effective management strategies to enhance project performance and productivity by countering the uniquely challenging environment in Alberta. The main purpose of this research is to develop industry wide benchmarking tailored to the specific constraints and challenges of Alberta. Results support quantitative assessments and identify the root causes of project performance and ineffective field productivity problems in the heavy industry sector capital projects. Customized metrics produced from the data collected through a web-based survey instrument were used to quantitatively assess project performance in the following dimensions: cost, schedule, change, rework, safety, engineering and construction productivity and construction practices. The system enables the industry to measure project performance more accurately, get meaningful comparisons, while establishing credible norms specific to Alberta projects. Data analysis to identify the root cause of performance problems was conducted. The analysis of Alberta projects substantiated lessons of previous studies to create an improved awareness of the abilities of Alberta-based companies to manage their

Objective for EUV microscopy, EUV lithography, and x-ray imaging

Science.gov (United States)

Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

2016-05-03

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

High throughput, high resolution enzymatic lithography process: effect of crystallite size, moisture, and enzyme concentration.

Science.gov (United States)

Mao, Zhantong; Ganesh, Manoj; Bucaro, Michael; Smolianski, Igor; Gross, Richard A; Lyons, Alan M

2014-12-08

By bringing enzymes into contact with predefined regions of a surface, a polymer film can be selectively degraded to form desired patterns that find a variety of applications in biotechnology and electronics. This so-called "enzymatic lithography" is an environmentally friendly process as it does not require actinic radiation or synthetic chemicals to develop the patterns. A significant challenge to using enzymatic lithography has been the need to restrict the mobility of the enzyme in order to maintain control of feature sizes. Previous approaches have resulted in low throughput and were limited to polymer films only a few nanometers thick. In this paper, we demonstrate an enzymatic lithography system based on Candida antartica lipase B (CALB) and poly(ε-caprolactone) (PCL) that can resolve fine-scale features, (<1 μm across) in thick (0.1-2.0 μm) polymer films. A Polymer Pen Lithography (PPL) tool was developed to deposit an aqueous solution of CALB onto a spin-cast PCL film. Immobilization of the enzyme on the polymer surface was monitored using fluorescence microscopy by labeling CALB with FITC. The crystallite size in the PCL films was systematically varied; small crystallites resulted in significantly faster etch rates (20 nm/min) and the ability to resolve smaller features (as fine as 1 μm). The effect of printing conditions and relative humidity during incubation is also presented. Patterns formed in the PCL film were transferred to an underlying copper foil demonstrating a "Green" approach to the fabrication of printed circuit boards.

Towards a Collaborative Open Environment of Project-Centred Learning

DEFF Research Database (Denmark)

Bongio, Aldo; van Bruggen, Jan; Ceri, Stefano

Nowadays, engineering studies are characterized by high mobility of students, lecturers and workforce and by the dynamics of multinational companies where “classes” or “students’ teams” composed of persons with different competencies and backgrounds, working together in projects to solve complex ...... environment. This paper proposes a COOPER framework and shows its approaches to address the various research challenges. This work is partially supported by EU/IST FP6 STREP project COOPER (contract number IST-2005-027073).......Nowadays, engineering studies are characterized by high mobility of students, lecturers and workforce and by the dynamics of multinational companies where “classes” or “students’ teams” composed of persons with different competencies and backgrounds, working together in projects to solve complex...

Lithography-based fabrication of nanopore arrays in freestanding SiN and graphene membranes

Science.gov (United States)

Verschueren, Daniel V.; Yang, Wayne; Dekker, Cees

2018-04-01

We report a simple and scalable technique for the fabrication of nanopore arrays on freestanding SiN and graphene membranes based on electron-beam lithography and reactive ion etching. By controlling the dose of the single-shot electron-beam exposure, circular nanopores of any size down to 16 nm in diameter can be fabricated in both materials at high accuracy and precision. We demonstrate the sensing capabilities of these nanopores by translocating dsDNA through pores fabricated using this method, and find signal-to-noise characteristics on par with transmission-electron-microscope-drilled nanopores. This versatile lithography-based approach allows for the high-throughput manufacturing of nanopores and can in principle be used on any substrate, in particular membranes made out of transferable two-dimensional materials.

Nanomanipulation of 2 inch wafer fabrication of vertically aligned carbon nanotube arrays by nanoimprint lithography

DEFF Research Database (Denmark)

Bu, Ian Y. Y.; Eichhorn, Volkmar; Carlson, Kenneth

2011-01-01

Carbon nanotube (CNT) arrays are typically defined by electron beam lithography (EBL), and hence limited to small areas due to the low throughput. To obtain wafer‐scale fabrication we propose large area thermal nanoimprint lithography (NIL). A 2‐inch stamp master is defined using EBL for subsequent......, efficient production of wafer‐scale/larger arrays of CNTs has been achieved. The CNTs have been deposited by wafer‐scale plasma enhanced chemical vapour deposition (PECVD) of C2H2/NH3. Substrates containing such nanotubes have been used to automate nanorobotic manipulation sequences of individual CNTs...

Fabrication of submicron structures in nanoparticle/polymer composite by holographic lithography and reactive ion etching

Science.gov (United States)

Zhang, A. Ping; He, Sailing; Kim, Kyoung Tae; Yoon, Yong-Kyu; Burzynski, Ryszard; Samoc, Marek; Prasad, Paras N.

2008-11-01

We report on the fabrication of nanoparticle/polymer submicron structures by combining holographic lithography and reactive ion etching. Silica nanoparticles are uniformly dispersed in a (SU8) polymer matrix at a high concentration, and in situ polymerization (cross-linking) is used to form a nanoparticle/polymer composite. Another photosensitive SU8 layer cast upon the nanoparticle/SU8 composite layer is structured through holographic lithography, whose pattern is finally transferred to the nanoparticle/SU8 layer by the reactive ion etching process. Honeycomb structures in a submicron scale are experimentally realized in the nanoparticle/SU8 composite.

Quadratic nonlinear optics to assess the morphology of riboflavin doped chitosan for eco-friendly lithography

Science.gov (United States)

Ray, Cédric; Caillau, Mathieu; Jonin, Christian; Benichou, Emmanuel; Moulin, Christophe; Salmon, Estelle; Maldonado, Melissa E.; Gomes, Anderson S. L.; Monnier, Virginie; Laurenceau, Emmanuelle; Leclercq, Jean-Louis; Chevolot, Yann; Delair, Thierry; Brevet, Pierre-François

2018-06-01

We report the use of the Second Harmonic Generation response from a riboflavin doped chitosan film as a characterization method of the film morphology. This film is of particular interest in the development of new and bio-sourced material for eco-friendly UV lithography. The method allows us to determine how riboflavin is distributed as a function of film depth in the sample. This possibility is of importance in order to have a better understanding of the riboflavin influence in chitosan films during the lithography process. On the contrary, linear optical techniques provide no information beyond the mere confirmation of the riboflavin presence.

Uniformity of LED light illumination in application to direct imaging lithography

Science.gov (United States)

Huang, Ting-Ming; Chang, Shenq-Tsong; Tsay, Ho-Lin; Hsu, Ming-Ying; Chen, Fong-Zhi

2016-09-01

Direct imaging has widely applied in lithography for a long time because of its simplicity and easy-maintenance. Although this method has limitation of lithography resolution, it is still adopted in industries. Uniformity of UV irradiance for a designed area is an important requirement. While mercury lamps were used as the light source in the early stage, LEDs have drawn a lot of attention for consideration from several aspects. Although LED has better and better performance, arrays of LEDs are required to obtain desired irradiance because of limitation of brightness for a single LED. Several effects are considered that affect the uniformity of UV irradiance such as alignment of optics, temperature of each LED, performance of each LED due to production uniformity, and pointing of LED module. Effects of these factors are considered to study the uniformity of LED Light Illumination. Numerical analysis is performed by assuming a serious of control factors to have a better understanding of each factor.

Fabrication of Monolithic Bridge Structures by Vacuum-Assisted Capillary-Force Lithography

KAUST Repository

Kwak, Rhokyun

2009-04-06

Monolithic bridge structures were fabricated by using capillary-force lithography (CFL), which was developed for patterning polymers over a large area by combining essential features of nanoimprint lithography and capillarity. A patterned soft mold was placed on a spin-coated UV-curable resin on a substrate. The polymer then moved into the cavity of the mold by capillary action and then solidified after exposure to UV radiation. The uncured resin was forced to migrate into the cavity of a micropatterned PDMS mold by capillarity, and then exposed to UV radiation under a high-energy mercury lamp with intensity. A rotary pump was then turned on, decreasing the air pressure in the chamber. SEM images were taken with a high-resolution SEM at an acceleration voltage greater than 15 kV. It was observed that when the air pressure was rapidly reduced to a low vacuum, the top layer moved into the nanochannels with a meniscus at the interface between the nanoscale PUA and the base structure.

New self-assembly strategies for next generation lithography

Science.gov (United States)

Schwartz, Evan L.; Bosworth, Joan K.; Paik, Marvin Y.; Ober, Christopher K.

2010-04-01

Future demands of the semiconductor industry call for robust patterning strategies for critical dimensions below twenty nanometers. The self assembly of block copolymers stands out as a promising, potentially lower cost alternative to other technologies such as e-beam or nanoimprint lithography. One approach is to use block copolymers that can be lithographically patterned by incorporating a negative-tone photoresist as the majority (matrix) phase of the block copolymer, paired with photoacid generator and a crosslinker moiety. In this system, poly(α-methylstyrene-block-hydroxystyrene)(PαMS-b-PHOST), the block copolymer is spin-coated as a thin film, processed to a desired microdomain orientation with long-range order, and then photopatterned. Therefore, selfassembly of the block copolymer only occurs in select areas due to the crosslinking of the matrix phase, and the minority phase polymer can be removed to produce a nanoporous template. Using bulk TEM analysis, we demonstrate how the critical dimension of this block copolymer is shown to scale with polymer molecular weight using a simple power law relation. Enthalpic interactions such as hydrogen bonding are used to blend inorganic additives in order to enhance the etch resistance of the PHOST block. We demonstrate how lithographically patternable block copolymers might fit in to future processing strategies to produce etch-resistant self-assembled features at length scales impossible with conventional lithography.

Human factors and technology environment in multinational project: problems and solutions

International Nuclear Information System (INIS)

Jardi Besa, X.; Munoz Cervantes, A.

2012-01-01

At the onset of nuclear projects in Spain, there was an import of nuclear technology. In a second phase, there was a transfer of technology. Subsequently, there was an adaptation of the technology. In this evolution, comparable to that of other countries, were involved several countries, overcoming the difficulties of human factors involved. The current nuclear projects multinationals have a new difficulty: the different industrial technological environments. This paper will address the organizational challenges of multinational engineering projects, in the type of project and the human factors of the participating companies.

R&D Project Valuation Considering Changes of Economic Environment: A Case of a Pharmaceutical R&D Project

Directory of Open Access Journals (Sweden)

Jung Ho Park

2018-03-01

Full Text Available R&D project valuation is important for effective R&D portfolio management through decision making, related to the firm’s R&D productivity, sustainable management. In particular, scholars have emphasized the necessities of capturing option value in R&D and developed methods of real option valuation. However, despite suggesting various real option models, there are few studies on simultaneously employing mean-reverting stochastic process and Markov regime switching to describe the evolution of cash flow and to reflect time-varying parameters resulting from changes of economic environment. Therefore, we suggest a mean-reverting binomial lattice model under Markov regime switching and apply it to evaluate clinical development with project cases of the pharmaceutical industry. This study finds that decision making can be different according to the regime condition, thus the suggested model can capture risks caused by the uncertainty of the economic environment, represented by regime switching. Further, this study simulates the model according to rate parameter from 0.00 to 1.00 and risk-free interest rates for regimes 1 and 2 from ( r 1 = 4%, r 2 = 2% to ( r 1 = 7%, r 2 = 5%, and confirms the rigidity of the model. Therefore, in practice, the mean-reverting binomial lattice model under Markov regime switching proposed in this study for R&D project valuation contributes to assisting company R&D project managers make effective decision making considering current economic environment and future changes.

Integrating nanosphere lithography in device fabrication

Science.gov (United States)

Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

2016-03-01

This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

Masks for high aspect ratio x-ray lithography

International Nuclear Information System (INIS)

Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

1997-01-01

Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding

Sequential infiltration synthesis for advanced lithography

Energy Technology Data Exchange (ETDEWEB)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih; Peng, Qing

2017-10-10

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Recent advances in X-ray lithography

International Nuclear Information System (INIS)

Cerrina, F.

1992-01-01

We report some significant developments in the area of X-ray technology, in the area of the modeling of image formation, in distortion control and in mask replication. Early simple models have been replaced by complete optical calculations based on physical optics and including all relevant factors. These models provide good agreement with the available experimental results. In the area of mask distortions, the use of finite element analysis models has clarified the roles played by the various sources of stress and explained in greater detail the origin of temperature changes. These progress have paved the way to the optimization of the exposure system and to the achievement of the large exposure latitude potential of X-ray lithography. (author)

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

Science.gov (United States)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-02-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1-1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

International Nuclear Information System (INIS)

Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

2012-01-01

In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1–1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

Deep lithography with protons Modelling and predicting the performances of a novel fabrication technology for micro-optical components

CERN Document Server

Volckaerts, B; Veretennicoff, I; Thienpont, H

2002-01-01

We developed a simulation package that predicts 3D-dose distributions in proton irradiated poly(methylmetacrylate) samples considering primary energy transfer and scattering phenomena. In this paper, we apply this code to predict the surface flatness and maximum thickness of micro-optical and mechanical structures fabricated with deep lithography with protons (DLP). We compare these simulation results with experimental data and highlight the fundamental differences between DLP and deep X-ray lithography.

Integrated lithography to prepare periodic arrays of nano-objects

International Nuclear Information System (INIS)

Sipos, Áron; Szalai, Anikó; Csete, Mária

2013-01-01

We present an integrated lithography method to prepare versatile nano-objects with variable shape and nano-scaled substructure, in wavelength-scaled periodic arrays with arbitrary symmetry. The idea is to illuminate colloid sphere monolayers by polarized beams possessing periodic lateral intensity modulations. Finite element method was applied to determine the effects of the wavelength, polarization and angle of incidence of the incoming beam, and to predict the characteristics of nano-objects, which can be fabricated on thin metal layer covered substrates due to the near-field enhancement under silica colloid spheres. The inter-object distance is controlled by varying the relative orientation of the periodic intensity modulation with respect to the silica colloid sphere monolayer. It is shown that illuminating silica colloid sphere monolayers by two interfering beams, linear patterns made of elliptical holes appear in case of linear polarization, while circularly polarized beams result in co-existent rounded objects, as more circular nano-holes and nano-crescents. The size of the nano-objects and their sub-structure is determined by the spheres diameter and by the wavelength. We present various complex plasmonic patterns made of versatile nano-objects that can be uniquely fabricated applying the inherent symmetry breaking possibilities in the integrated lithography method.

Large area nanoimprint by substrate conformal imprint lithography (SCIL)

Science.gov (United States)

Verschuuren, Marc A.; Megens, Mischa; Ni, Yongfeng; van Sprang, Hans; Polman, Albert

2017-06-01

Releasing the potential of advanced material properties by controlled structuring materials on sub-100-nm length scales for applications such as integrated circuits, nano-photonics, (bio-)sensors, lasers, optical security, etc. requires new technology to fabricate nano-patterns on large areas (from cm2 to 200 mm up to display sizes) in a cost-effective manner. Conventional high-end optical lithography such as stepper/scanners is highly capital intensive and not flexible towards substrate types. Nanoimprint has had the potential for over 20 years to bring a cost-effective, flexible method for large area nano-patterning. Over the last 3-4 years, nanoimprint has made great progress towards volume production. The main accelerator has been the switch from rigid- to wafer-scale soft stamps and tool improvements for step and repeat patterning. In this paper, we discuss substrate conformal imprint lithography (SCIL), which combines nanometer resolution, low patterns distortion, and overlay alignment, traditionally reserved for rigid stamps, with the flexibility and robustness of soft stamps. This was made possible by a combination of a new soft stamp material, an inorganic resist, combined with an innovative imprint method. Finally, a volume production solution will be presented, which can pattern up to 60 wafers per hour.

Fabrication of sub-wavelength photonic structures by nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Kontio, J.

2013-11-01

Nanoimprint lithography (NIL) is a novel but already a mature lithography technique. In this thesis it is applied to the fabrication of nanophotonic devices using its main advantage: the fast production of sub-micron features in high volume in a cost-effective way. In this thesis, fabrication methods for conical metal structures for plasmonic applications and sub-wavelength grating based broad-band mirrors are presented. Conical metal structures, nanocones, with plasmonic properties are interesting because they enable concentrating the energy of light in very tight spots resulting in very high local intensities of electromagnetic energy. The nanocone formation process is studied with several metals. Enhanced second harmonic generation using gold nanocones is presented. Bridged-nanocones are used to enhance Raman scattering from a dye solution. The sub-wavelength grating mirror is an interesting structure for photonics because it is very simple to fabricate and its reflectivity can be extended to the far infrared wavelength range. It also has polarization dependent properties which are used in this thesis to stabilize the output beam of infrared semiconductor disk laser. NIL is shown to be useful a technique in the fabrication of nanophotonic devices in the novel and rapidly growing field of plasmonics and also in more traditional, but still developing, semiconductor laser applications (orig.)

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography

International Nuclear Information System (INIS)

Li, S. P.; Lebib, A.; Peyrade, D.; Natali, M.; Chen, Y.; Lew, W. S.; Bland, J. A. C.

2001-01-01

We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified. [copyright] 2001 American Institute of Physics

Shadow edge lithography for nanoscale patterning and manufacturing

International Nuclear Information System (INIS)

Bai, John G; Chang, C-L; Chung, Jae-Hyun; Lee, Kyong-Hoon

2007-01-01

We demonstrate a wafer-scale nanofabrication method using the shadow effect in physical vapor deposition. An analytical model is presented to predict the formation of nanoscale gaps created by the shadow effect of a prepatterned edge on a deposition plane. The theoretical prediction agrees quantitatively with the widths of the fabricated nanogaps and nanochannels. In the diffusion experiments, both λ-DNA and fluorescein molecules were successfully introduced into the nanochannels. The proposed shadow edge lithography has potential to be a candidate for mass-producing nanostructures

The superconducting x-ray lithography source program at Brookhaven

Energy Technology Data Exchange (ETDEWEB)

Williams, G. P.; Heese, R. N.; Vignola, G.; Murphy, J. B.; Godel, J. B.; Hsieh, H.; Galayda, J.; Seifert, A.; Knotek, M. L.

1989-07-01

A compact electron storage ring with superconducting dipole magnets, is being developed at the National Synchrotron Light Source at Brookhaven. The parameters of the source have been optimized for its future use as an x-ray source for lithography. This first ring is a prototype which will be used to study the operating characteristics of machines of this type with particular attention being paid to low-energy injection and long beam lifetime.

Fabrication of nanochannels on polyimide films using dynamic plowing lithography

Science.gov (United States)

Stoica, Iuliana; Barzic, Andreea Irina; Hulubei, Camelia

2017-12-01

Three distinct polyimide films were analyzed from the point of view of their morphology in order to determine if their surface features can be adapted for applications where surface anisotropy is mandatory. Channels of nanometric dimensions were created on surface of the specimens by using a less common atomic force microscopy (AFM) method, namely Dynamic Plowing Lithography (DPL). The changes generated by DPL procedure were monitored through the surface texture and other functional parameters, denoting the surface orientation degree and also bearing and fluid retention properties. The results revealed that in the same nanolithography conditions, the diamine and dianhydride moieties have affected the characteristics of the nanochannels. This was explained based on the aliphatic/aromatic nature of the monomers and the backbone flexibility. The reported data are of great importance in designing custom nanostructures with enhanced anisotropy on surface of polyimide films for liquid crystal orientation or guided cell growth purposes. At the end, to track the effect of the nanolithography process on the tip sharpness, degradation and contamination, the blind tip reconstruction was performed on AFM probe, before and after lithography experiments, using TGT1 test grating AFM image.

Business dynamics of lithography at very low k1 factors

Science.gov (United States)

Harrell, Sam; Preil, Moshe E.

1999-07-01

Lithography is the largest capital investment and the largest operating cost component of leading edge semiconductor fabs. In addition, it is the dominant factor in determining the performance of a semiconductor device and is important in determining the yield and thus the economics of a semiconductor circuit. To increase competitiveness and broaden adoption of circuits and the end products in which they are used, there has been and continues to be a dramatic acceleration in the industry roadmap. A critical factor in the acceleration is driving the lithographic images to smaller feature size. There has always been economic tension between the pace of change and the resultant circuit cost. The genius of the semiconductor industry has been in its ability to balance its technology with economic factors and deliver outstanding value to those using the circuits to add value to their end products. The critical question today is whether optical lithography can be successfully and economically extended to maintain and improve the economic benefits of higher complexity circuits. In this paper we will discuss some of these significant tradeoffs required to maintain optically based lithographic progress on the roadmap at acceptable cost.

Direct modification of silicon surface by nanosecond laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Wang, Dapeng [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Wang, Zuobin, E-mail: wangz@cust.edu.cn [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Zhang, Ziang [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); Yue, Yong [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Li, Dayou [JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Maple, Carsten [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom)

2013-10-01

Periodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.

Integral characteristics of spectra of ions important for EUV lithography

International Nuclear Information System (INIS)

Karazija, R; Kucas, S; Momkauskaite, A

2006-01-01

The emission spectrum corresponding to the 4p 5 4d N+1 + 4p 6 4d N-1 4f → 4p 6 4d N transition array is concentrated in a narrow interval of wavelengths. That is due to the existence of an approximate selection rule and quenching of some lines by configuration mixing. Thus such emission of elements near Z = 50 is considered to be the main candidate for the EUV lithography source at λ = 13.5 nm. In the present work the regularities of these transition arrays are considered using their integral characteristics: average energy, total line strength, variance and interval of array containing some part of the total transition probability. Calculations for various ions of elements In, Sn, Sb, Te, I and Xe have been performed in a two-configuration pseudorelativistic approximation, which describes fairly well the main features of the spectra. The variation in the values of the main integral characteristics of the spectra with atomic number and ionization degree gives the possibility of comparing quantitatively the suitability of the emission of various ions for EUV lithography

Process competencies in a problem and project based learning environment

DEFF Research Database (Denmark)

Du, Xiangyun; Kolmos, Anette

2006-01-01

with the expected professional competencies. Based on the educational practice of PBL Aalborg Model, which is characterized by problem-orientation, project-organization and team work, this paper examines the process of developing process competencies through studying engineering in a PBL environment from...... process competencies through doing problem and project based work in teams? 2) How do students perceive their achievement of these process competencies?......Future engineers are not only required to master technological competencies concerning solving problems, producing and innovating technology, they are also expected to have capabilities of cooperation, communication, and project management in diverse social context, which are referred to as process...

The environment of the Olympic Dam project

International Nuclear Information System (INIS)

Anon.

1989-01-01

The Olympic Dam uranium/copper/gold project at Roxby Downs, South Australia, has a harsh environment with high summer temperatures, low rainfall and poor quality soils. There are no natural water courses. The vegetation is dominated by annual grasses in summer and wildflowers in winter. Red kangaroos are the most commonly sighted native mammals. The Fat-tailed Dunnart a nocturnal carniverous marsupial, is found. Eighty three bird species have been recorded. Reptiles are numerous and one amphibian occurs. A vermin eradication program aimed at rabbit control is conducted. ills

Illumination system for X-ray lithography

International Nuclear Information System (INIS)

Buckley, W.D.

1989-01-01

An X-ray lithography system is described, comprising: a point source of X-Ray radiation; a wafer plane disposed in spaced relation to the point source of X-Ray radiation; a mask disposed between the point source of X-Ray radiation and the wafer plane whereby X-Ray radiation from the point source of X-ray radiation passes through the mask to the water plane; and X-Ray absorbent means mounted between the point source of X-Ray radiation and the wafer plane, the X-Ray absorbent means being of quadratically absorption from maximum absorption at the center to minimum absorption at the edge so as to have a radial absorption gradient profile to compensate for radial flux variation of the X-Ray radiation

A simple electron-beam lithography system

DEFF Research Database (Denmark)

Mølhave, Kristian; Madsen, Dorte Nørgaard; Bøggild, Peter

2005-01-01

A large number of applications of electron-beam lithography (EBL) systems in nanotechnology have been demonstrated in recent years. In this paper we present a simple and general-purpose EBL system constructed by insertion of an electrostatic deflector plate system at the electron-beam exit...... of the column of a scanning electron microscope (SEM). The system can easily be mounted on most standard SEM systems. The tested setup allows an area of up to about 50 x 50 pm to be scanned, if the upper limit for acceptable reduction of the SEM resolution is set to 10 run. We demonstrate how the EBL system can...... be used to write three-dimensional nanostructures by electron-beam deposition. (C) 2004 Elsevier B.V. All rights reserved....

Review of vacuum systems for x-ray lithography light sources

International Nuclear Information System (INIS)

Schuchman, J.C.

1990-01-01

This paper will review and give a status report on vacuum systems for X-Ray lithography light sources. It will include conventional machines and compact machines (machines using superconducting magnets). The vacuum systems will be described and compared with regard to basic machine parameters, pumping systems, types of pumps, chamber design and material, gauging and diagnostics, and machine performane. 23 refs., 8 figs., 1 tab

Vacuum system design for a superconducting X-ray lithography light source

International Nuclear Information System (INIS)

Schuchman, J.C.

1990-01-01

A superconducting electron storage ring for X-ray lithography (SXLS) is to be built at Brookhaven National Laboratory (BNL). The goal is to design and construct a light source specifically dedicated to X-ray lithography production and which would be used as a prototype in a technology transfer to American industry. The machine will be built in two phases: phase I, a low energy ring (200 MeV, 500 mA) using all room temperature magnets which will be used primarily for low energy injection studies. Phase II will be a full energy machine (690 MeV, 500 mA) where the room temperature 180 0 dipole magnets of phase I will be replaced with superconducting magnets. The machine, with a racetrack shape and a circumference of 8.5 m, is designed to be portable and replaceable as a single unit. This paper will discuss the vacuum system design for both phases; i.e. gas desorption, warm bore vs cold bore, ion trapping, clearing electrodes, and diagnostic instrumentation. (author)

Reduction of nanowire diameter beyond lithography limits by controlled catalyst dewetting

Science.gov (United States)

Calahorra, Yonatan; Kerlich, Alexander; Amram, Dor; Gavrilov, Arkady; Cohen, Shimon; Ritter, Dan

2016-04-01

Catalyst assisted vapour-liquid-solid is the most common method to realize bottom-up nanowire growth; establishing a parallel process for obtaining nanoscale catalysts at pre-defined locations is paramount for further advancement towards commercial nanowire applications. Herein, the effect of a selective area mask on the dewetting of metallic nanowire catalysts, deposited within lithography-defined mask pinholes, is reported. It was found that thin disc-like catalysts, with diameters of 120-450 nm, were transformed through dewetting into hemisphere-like catalysts, having diameters 2-3 fold smaller; the process was optimized to about 95% yield in preventing catalyst splitting, as would otherwise be expected due to their thickness-to-diameter ratio, which was as low as 1/60. The catalysts subsequently facilitated InP and InAs nanowire growth. We suggest that the mask edges prevent surface migration mediated spreading of the dewetted metal, and therefore induce its agglomeration into a single particle. This result presents a general strategy to diminish lithography-set dimensions for NW growth, and may answer a fundamental challenge faced by bottom-up nanowire technology.

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

Energy Technology Data Exchange (ETDEWEB)

Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven, E-mail: srodt@physik.tu-berlin.de; Reitzenstein, Stephan [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Strittmatter, André [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, D-39106 Magdeburg (Germany)

2015-07-15

We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

Preparation of Octadecyltrichlorosilane Nanopatterns Using Particle Lithography: An Atomic Force Microscopy Laboratory

Science.gov (United States)

Highland, Zachary L.; Saner, ChaMarra K.; Garno, Jayne C.

2018-01-01

Experiments are described that involve undergraduates learning concepts of nanoscience and chemistry. Students prepare nanopatterns of organosilane films using protocols of particle lithography. A few basic techniques are needed to prepare samples, such as centrifuging, mixing, heating, and drying. Students obtain hands-on skills with nanoscale…

Characterizing dusty argon-acetylene plasmas as a first step to understand dusty EUV environments

NARCIS (Netherlands)

Wetering, van de F.M.J.H.; Nijdam, S.; Kroesen, G.M.W.

2012-01-01

In extreme ultraviolet (EUV) lithography, ionic and particulate debris coming from the plasma source plays an important role. We started up a project looking at the principles of particle formation in plasmas and the interaction with EUV radiation. To this end, we study a low-pressure (10 Pa)

North Central Project: Environment act proposal

International Nuclear Information System (INIS)

1992-05-01

Manitoba Hydro proposes to construct a power transmission and distribution line system to connect 12 northern Manitoba communities to the utility's central power grid. The purpose of this North Central Project (NCP) is to provide reliable and unrestricted electric service to remote communities now largely receiving limited diesel-generated power. The NCP is composed of a 138-kV transmission line running ca 350 km from the Kelsey Generating Station, ca 160 km of 25-kV distribution lines, new transformer stations at four communities, upgraded internal distribution systems within the communities, removal of existing diesel stations and restoration of the sites, modifications and additions to the Kelsey switchyard, and a communications system. The NCP is described in detail, including proposed line routes and transformer station locations, rationales for site and route selection, projected impacts on the environment and local societies, and consultations with the communities to be affected. Potential impacts are expected to be modest, with few unmitigable adverse impacts and a number of potentially significant positive benefits. Impact management measures are proposed to prevent or mitigate adverse effects and to create or enhance positive impacts such as local employment of native peoples. 49 figs., 1 tab

Report of the workshop on transferring X-ray Lithography Synchrotron (XLS) technology to industry

Energy Technology Data Exchange (ETDEWEB)

Marcuse, W.

1987-01-01

This paper reports on plans to develop an x-ray synchrotron for use in lithography. The primary concern of the present paper is technology transfer from national laboratories to private industry. (JDH)

Collaborative learning environments and collective creation in 3 weeks bside project experience

Directory of Open Access Journals (Sweden)

Carlos Javier Rodríguez Sánchez

2016-07-01

Full Text Available This  paper proposes  a  socio-critical review  and  reflection  related to collaborative learning environment as pedagogical agent and its relationship with artistic-practice communities of collective creativity. The main goal of this research is to introduce the case study 3 weeks bside project experience (3WBPE, from now on. Through participatory action research and the analysis of different concepts and their practical and theoretical aspects. In the framework of an education self-manage- ment development universe, the project pro- cess is based on a collaborative learning. It is focused on the constructions of a common discourse about the idea of territory that is represented in a publication and site specific exhibition. 3WBPE allowed setting up stanc- es that suggest a social interaction transfer related to construction of belong, participa- tion and transformation environment, ques- tion a teacher role or collective creation of a project, emphasizing the importance of pro- cess as a goal, beyond of culture artifact pro- ductions. It was dealt with dialog structures, where a social harmony supposed a personal and common reflection space about author’s stance, nigh socio-culture environments and the bond within the education, arts and visu- al culture focused in the horizontal and flexi- ble work capacity, that proposes a collabora- tive learning environment settings.

Human Activity Recognition in AAL Environments Using Random Projections

Directory of Open Access Journals (Sweden)

Robertas Damaševičius

2016-01-01

Full Text Available Automatic human activity recognition systems aim to capture the state of the user and its environment by exploiting heterogeneous sensors attached to the subject’s body and permit continuous monitoring of numerous physiological signals reflecting the state of human actions. Successful identification of human activities can be immensely useful in healthcare applications for Ambient Assisted Living (AAL, for automatic and intelligent activity monitoring systems developed for elderly and disabled people. In this paper, we propose the method for activity recognition and subject identification based on random projections from high-dimensional feature space to low-dimensional projection space, where the classes are separated using the Jaccard distance between probability density functions of projected data. Two HAR domain tasks are considered: activity identification and subject identification. The experimental results using the proposed method with Human Activity Dataset (HAD data are presented.

Human Activity Recognition in AAL Environments Using Random Projections.

Science.gov (United States)

Damaševičius, Robertas; Vasiljevas, Mindaugas; Šalkevičius, Justas; Woźniak, Marcin

2016-01-01

Automatic human activity recognition systems aim to capture the state of the user and its environment by exploiting heterogeneous sensors attached to the subject's body and permit continuous monitoring of numerous physiological signals reflecting the state of human actions. Successful identification of human activities can be immensely useful in healthcare applications for Ambient Assisted Living (AAL), for automatic and intelligent activity monitoring systems developed for elderly and disabled people. In this paper, we propose the method for activity recognition and subject identification based on random projections from high-dimensional feature space to low-dimensional projection space, where the classes are separated using the Jaccard distance between probability density functions of projected data. Two HAR domain tasks are considered: activity identification and subject identification. The experimental results using the proposed method with Human Activity Dataset (HAD) data are presented.

Gender and Diversity in a Problem and Project Based Learning Environment

DEFF Research Database (Denmark)

Du, Xiangyun

Problem and Project Based Learning (PBL) has been well used as an educational philosophy and methodology in the construction of student centered and contextualized learning environment. PBL is also regarded as an effective method in producing engineering graduates who can not only meet the needs...... on the learning experiences of engineering students in the PBL environment in Denmark. This book also attempts to question the issue of diversity in engineering education via the exploration of whether or in which ways the PBL environment is friendly to diverse groups of learners such as women....

Multilayer, Stacked Spiral Copper Inductors on Silicon with Micro-Henry Inductance Using Single-Level Lithography

Directory of Open Access Journals (Sweden)

Timothy Reissman

2012-01-01

Full Text Available We present copper structures composed of multilayer, stacked inductors (MLSIs with tens of micro-Henry inductance for use in low frequency (sub 100 MHz, power converter technology. Unique to this work is the introduction of single-level lithography over the traditional two-level approach to create each inductor layer. The result is a simplified fabrication process which results in a reduction in the number of lithography steps per inductor (metal layer and a reduction in the necessary alignment precision. Additionally, we show that this fabrication process yields strong adhesion amongst the layers, since even after a postprocess abrasion technique at the inner diameter of the inductors, no shearing occurs and connectivity is preserved. In total, three separate structures were fabricated using the single-level lithography approach, each with a three-layered, stacked inductor design but with varied geometries. Measured values for each of the structures were extracted, and the following results were obtained: inductance values of 24.74, 17.25, and 24.74 μH, self-resonances of 9.87, 5.72, and 10.58 MHz, and peak quality factors of 2.26, 2.05, and 4.6, respectively. These values are in good agreement with the lumped parameter model presented.

Layout compliance for triple patterning lithography: an iterative approach

Science.gov (United States)

Yu, Bei; Garreton, Gilda; Pan, David Z.

2014-10-01

As the semiconductor process further scales down, the industry encounters many lithography-related issues. In the 14nm logic node and beyond, triple patterning lithography (TPL) is one of the most promising techniques for Metal1 layer and possibly Via0 layer. As one of the most challenging problems in TPL, recently layout decomposition efforts have received more attention from both industry and academia. Ideally the decomposer should point out locations in the layout that are not triple patterning decomposable and therefore manual intervention by designers is required. A traditional decomposition flow would be an iterative process, where each iteration consists of an automatic layout decomposition step and manual layout modification task. However, due to the NP-hardness of triple patterning layout decomposition, automatic full chip level layout decomposition requires long computational time and therefore design closure issues continue to linger around in the traditional flow. Challenged by this issue, we present a novel incremental layout decomposition framework to facilitate accelerated iterative decomposition. In the first iteration, our decomposer not only points out all conflicts, but also provides the suggestions to fix them. After the layout modification, instead of solving the full chip problem from scratch, our decomposer can provide a quick solution for a selected portion of layout. We believe this framework is efficient, in terms of performance and designer friendly.

An integrated lithography concept with application on 45-nm ½ pitch flash memory devices

Science.gov (United States)

Dusa, Mircea; Engelen, Andre; Finders, Jo

2006-03-01

It is well accepted to judge imaging capability of an exposure tool primarily on printing equal line-spaces, at a minimum ½ pitch. Further on, combining line-space minimum ½ pitches with scanner maximum NA, defines the process k I. From a lithographer viewpoint, flash memory device is the perfect candidate to achieve lowest k I lithography for a given NA. This is justified by flash layout specific, with regular and relative simple 1-D topology of the critical layers that look like line-space gratings. In reality, flash layout presents a subtle topology and cannot be considered a simple 1-D line-space problem. Uniqueness to flash layout is the array-end zones, where pattern regularity is broken up by features with dimensions and separation of n x ½ pitch, where n is an integer number that we used in this work to manipulate litho process latitudes. Integrated lithography concept seeks to tweak flash pattern details and tune it with scanner control parameters. We introduce feature-center placement through focus and dose as the metric to characterize a cross-coupling phenomena occurring between adjacent features located at array-end of typical flash poly wordline layer. We comparedthe metric behavior with usual litho process window parameters and identified interactions with scanner CDU control parameters. We show how feature-center placement errors are direct functions of optical and physical characteristics of mask materials, attenuated PSM or binary, and of layout array-end topology. Imaging at extreme low-k I, effects from layout specifics and mask materials are best characterized by full vector, rigorous EM simulation, instead of scalar approach, typically used for OPC treatment. Predicted CDU performance of 1.2NA scanner, based on integrated lithography concept, matched very well the experimental results in printing 45nm ½ pitch flash wordline layer. Results show that 1.2NA scanner, operating at 0.28 k I could be an effective lithography solution for 45nm

Measurement of low molecular weight silicon AMC to protect UV optics in photo-lithography environments

Science.gov (United States)

Lobert, Jürgen M.; Miller, Charles M.; Grayfer, Anatoly; Tivin, Anne M.

2009-03-01

A new analytical method for semiconductor-specific applications is presented for the accurate measurement of low molecular weight, silicon-containing, organic compounds TMS, HMDSO and D3. Low molecular weight / low boiling point silicon-containing compounds are not captured for extended periods of time by traditional chemical filters but have the same potential to degrade exposure tool optical surfaces as their high molecular weight counterparts. Likewise, we show that capturing these compounds on sample traps that are commonly used for organic AMC analysis does not work for various reasons. Using the analytical method described here, TMS, HMDSO and D3 can be measured artifact-free, with at least a 50:1 peak-to-noise ratio at the method detection limit, determined through the Hubaux-Vos method and satisfying a conservative 99% statistical confidence. Method detection limits for the compounds are 1-6 ppt in air. We present calibration curve, capacity, capture efficiency, break-through and repeatability data to demonstrate robustness of method. Seventy-one real-world samples from 26 projects taken in several fab environments show that TMS is found in concentrations 100 times higher than those of HMDSO and D3. All compounds are found in all environments in concentrations ranging from zero to 12 ppm, but most concentrations were below 50 ppb. All compounds are noticeably higher in litho-bays than in sub-fabs and we found all three compounds inside of two exposure tools, suggesting cleanroom and/or tool-internal contamination sources.

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Science.gov (United States)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Playing with small objects Nano lithography and manipulation A.K. ...

Indian Academy of Sciences (India)

Table of contents. Playing with small objects Nano lithography and manipulation A.K.Raychaudhuri Department of Physics IISc · PowerPoint Presentation · Slide 3 · Slide 4 · Slide 5 · Slide 6 · Atomic Force Microscopy · Slide 8 · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Slide 15 · Slide 16 · Slide 17 · Slide 18.

A Social Contract for University-Industry Collaboration: A Case of Project-Based Learning Environment

Science.gov (United States)

Vartiainen, Tero

This study determines a social contract for a form of university-industry collaboration to a project-based learning environment in close collaboration with industry. The author's previous studies on moral conflicts in a project-based learning (PjBL) environment and his 5-year engagement in the PjBL environment are used as background knowledge, and John Rawls' veil of ignorance is used as a method in the contract formulation. Fair and impartial treatment of actors is strived for with the contract which constitutes of sets of obligations for each party, students, clients, and university (instructors) in the chosen project course. With the contract fair and impartial treatment of actors is strived for and the most dilemmatic moral conflicts are tried to be avoided. The forming of the social contract is evaluated, and implications for research and collaborations in practice are offered.

The ALIVE Project: Astronomy Learning in Immersive Virtual Environments

Science.gov (United States)

Yu, K. C.; Sahami, K.; Denn, G.

2008-06-01

The Astronomy Learning in Immersive Virtual Environments (ALIVE) project seeks to discover learning modes and optimal teaching strategies using immersive virtual environments (VEs). VEs are computer-generated, three-dimensional environments that can be navigated to provide multiple perspectives. Immersive VEs provide the additional benefit of surrounding a viewer with the simulated reality. ALIVE evaluates the incorporation of an interactive, real-time ``virtual universe'' into formal college astronomy education. In the experiment, pre-course, post-course, and curriculum tests will be used to determine the efficacy of immersive visualizations presented in a digital planetarium versus the same visual simulations in the non-immersive setting of a normal classroom, as well as a control case using traditional classroom multimedia. To normalize for inter-instructor variability, each ALIVE instructor will teach at least one of each class in each of the three test groups.

Karlsruhe Nuclear Research Center. Research and development program 1991

International Nuclear Information System (INIS)

1990-01-01

The R and D activities of the KfK are classified in 8 main research activities: 1) project nuclear fusion; 2) project pollutant mitigation in the environment; 3) solid state and materials research; 4) nuclear and elementary particle physics; 5) microtechnics e.g. X-ray lithography; 6) materials handling; 7) project nuclear safety research; 8) radioactive waste management. (orig.) [de

40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

NARCIS (Netherlands)

Luttge, R.; Adam, D.; Burkhardt, F.; Hoke, F.; Schacke, H.; Schmidt, M.; Wolf, H.; Schmidt, A.

1999-01-01

High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG

Fast or Smart? How the Use of Scrum Can Influence the Temporal Environment in a Project

DEFF Research Database (Denmark)

Scheller, Vibeke Kristine; Hvid, Helge Søndergaard; Pries-Heje, Jan

2015-01-01

A recent survey shows that 40% of all projects use, or have used, agile methods. The most commonly used agile method is Scrum, one reason being that Scrum provides mechanisms for building a healthy temporal environment for the project participants. Through a case study carried out in a Danish...... municipality we demkonstrate how the tgemporal environment in a project is influenced - enhanced as well as challenged - by the use of Scrum....

Clean solutions to the incoming wafer quality impact on lithography process yield limits in a dynamic copper/low-k research and development environment

Science.gov (United States)

Lysaght, Patrick S.; Ybarra, Israel; Sax, Harry; Gupta, Gaurav; West, Michael; Doros, Theodore G.; Beach, James V.; Mello, Jim

2000-06-01

The continued growth of the semiconductor manufacturing industry has been due, in large part, to improved lithographic resolution and overlay across increasingly larger chip areas. Optical lithography continues to be the mainstream technology for the industry with extensions of optical lithography being employed to support 180 nm product and process development. While the industry momentum is behind optical extensions to 130 nm, the key challenge will be maintaining an adequate and affordable process latitude (depth of focus/exposure window) necessary for 10% post-etch critical dimension (CD) control. If the full potential of optical lithography is to be exploited, the current lithographic systems can not be compromised by incoming wafer quality. Impurity specifications of novel Low-k dielectric materials, plating solutions, chemical-mechanical planarization (CMP) slurries, and chemical vapor deposition (CVD) precursors are not well understood and more stringent control measures will be required to meet defect density targets as identified in the National Technology Roadmap for Semiconductors (NTRS). This paper identifies several specific poor quality wafer issues that have been effectively addressed as a result of the introduction of a set of flexible and reliable wafer back surface clean processes developed on the SEZ Spin-Processor 203 configured for processing of 200 mm diameter wafers. Patterned wafers have been back surface etched by means of a novel spin process contamination elimination (SpCE) technique with the wafer suspended by a dynamic nitrogen (N2) flow, device side down, via the Bernoulli effect. Figure 1 illustrates the wafer-chuck orientation within the process chamber during back side etch processing. This paper addresses a number of direct and immediate benefits to the MicraScan IIITM deep-ultraviolet (DUV) step-and-scan system at SEMATECH. These enhancements have resulted from the resolution of three significant problems: (1) back surface

Lithography-induced limits to scaling of design quality

Science.gov (United States)

Kahng, Andrew B.

2014-03-01

Quality and value of an IC product are functions of power, performance, area, cost and reliability. The forthcoming 2013 ITRS roadmap observes that while manufacturers continue to enable potential Moore's Law scaling of layout densities, the "realizable" scaling in competitive products has for some years been significantly less. In this paper, we consider aspects of the question, "To what extent should this scaling gap be blamed on lithography?" Non-ideal scaling of layout densities has been attributed to (i) layout restrictions associated with multi-patterning technologies (SADP, LELE, LELELE), as well as (ii) various ground rule and layout style choices that stem from misalignment, reliability, variability, device architecture, and electrical performance vs. power constraints. Certain impacts seem obvious, e.g., loss of 2D flexibility and new line-end placement constraints with SADP, or algorithmically intractable layout stitching and mask coloring formulations with LELELE. However, these impacts may well be outweighed by weaknesses in design methodology and tooling. Arguably, the industry has entered a new era in which many new factors - (i) standard-cell library architecture, and layout guardbanding for automated place-and-route: (ii) performance model guardbanding and signoff analyses: (iii) physical design and manufacturing handoff algorithms spanning detailed placement and routing, stitching and RET; and (iv) reliability guardbanding - all contribute, hand in hand with lithography, to a newly-identified "design capability gap". How specific aspects of process and design enablements limit the scaling of design quality is a fundamental question whose answer must guide future RandD investment at the design-manufacturing interface. terface.

UV curing imprint lithography for micro-structure in MEMS manufacturing

International Nuclear Information System (INIS)

Ding Yucheng; Liu Hongzhong; Lu Bingheng; Qiu Zhihui

2006-01-01

Imprint lithography has been gaining popularity as a new method to fabricate microelectro mechanical systems. The main advantages of the IL are its extremely low set-up cost, high replicating accuracy and extended fabricating critical dimension. Compare to traditional optical lithography, IL has the advantages of being able to fabricate complex pattern structure with high-aspect ratio. However, the thermal and loading errors can reduce pattern transferring fidelity. In this paper, UV curing method is used in IL process which can avoid the heat distortion of tools. Additionally, a six-step loading process for template pressing into resist film is developed. The performance of this process include: the loading locus is continuous with very high accuracy (10nm), the press releasing control (accuracy up to 1 psi) can reduce and avoid the distortion of template structure and stage supports. This process can achieve a residual layer with thickness of 20nm and avoid the elastic stamp distorted (under 20nm) at the same time. The press force can reach up to 300 psi for 6 cm 2 pattern size but the friction force during demould process can be reduced to 30 psi. Experimental results reveal that it is a novel and robust process with high fidelity in micro/nano structures manufacturing

Advanced 0.3-NA EUV lithography capabilities at the ALS

International Nuclear Information System (INIS)

Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A.; Hoef, Brian; Jackson, Keith

2005-01-01

For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines

Project Selection in the Design Studio: Absence of Learning Environments

Science.gov (United States)

Basa, Inci

2010-01-01

Project selection is an essential matter of design teaching. Based on observations of a specific curriculum, the author claims that a wide repertoire of subjects including offices, restaurants, hotels, and other public places are used to prepare design students, but that schools and other "learning environments/ schools" are similarly…

Sustainable development criteria for Built Environment projects in South Africa (CSIR)

CSIR Research Space (South Africa)

Gibberd, Jeremy T

2010-01-01

Full Text Available This paper is based on work undertaken for the Gauteng Department of Agriculture and Rural Development (GDARD) developing a set of sustainable development criteria for built environment projects requiring environmental impact assessments. (Gibberd...

Results from the European Integrated Project '' New Materials for Extreme Environments (ExtreMat) ''

International Nuclear Information System (INIS)

Bolt, H.; Linsmeier, Ch.; Baluc, N.; Garcia-Rosales, G.; Gualco, G. C.; Simancik, F.

2006-01-01

The goal of the European Integrated Project '' ExtreMat '' is to provide and to industrialize new materials and their compounds for applications in extreme environments that are beyond reach with incremental materials development only. The R(and)D activities in this project aim to provide a) self-passivating protection materials for sensitive structures operated in physico-chemically aggressive environments at high temperatures; b) new heat sink materials with the capability of very efficient heat removal, often at very high temperature level; c) radiation resistant materials for very high operation temperatures; d) new processing routes for complex heterogeneous compounds that can be operated in extreme environments. Key applications for these new materials are in the sectors of fusion, advanced fission, space, and electronic applications. Further use of these materials is expected in spin-off fields, such as brake applications and energy conversion. The project started in December 2004 for a duration of five years and is supported by the European Community. The 37 project participants are from 13 EU member states and include 6 universities, 7 research institutes, 10 research centres and 14 industrial companies. Research results regarding the development of materials for application in nuclear fusion, especially on protection, heat sink, and radiation resistant materials will be presented. A view to other applications of these materials in the fields of fission, space and electronics will be given in the presentation. ExtreMat Project Partners: see http://www.extremat.org/. (author)

Development of GaN-based nanosensors using surface charge lithography

International Nuclear Information System (INIS)

Popa, Veaceslav; Braniste, Tudor; Volciuc, Olesea; Pavlidis, Dimitris; Sarua, Andrei; Kuball, Martin; Heard, Peter

2011-01-01

Semiconductor nanotechnology is a fast developing branch of modern engineering that offers perspectives for the development of electronic devices with superior parameters. A special and important niche in nanotechnology is allocated to the fabrication of nanosensors which are expected to exhibit higher sensitivity in comparison with classical microelectronic sensors. Various aspects of fabrication of GaN based nanosensors using Surface Charge Lithography are discussed and preliminary tests for gas sensors applications are presented.

A Study of Using Simulation to Overcome Obstacles That Block the Implementation of Critical Chain Project Management to Project Management Environment

OpenAIRE

Chia-Ling Huang; Rong-Kwei Li; Chih-Hung Tsai; Yi-Chan Chung; Yao-Wen Hsu

2014-01-01

Since 1997, the Critical Chain Project Management (CCPM) method has received considerable attention. Hundreds of successful CCPM cases have achieved highly reliable on-time delivery (OTD) with short project lead-time (PLT) in multi-project environments. However, two obstacles have remained, blocking the implementation of CCPM to project management (PM) society. The first has been addressed by PM practitioners, who have been less than confident that OTD and PLT can be significantly improved by...

Molecular Switch for Sub-Diffraction Laser Lithography by Photoenol Intermediate-State Cis-Trans Isomerization.

Science.gov (United States)

Mueller, Patrick; Zieger, Markus M; Richter, Benjamin; Quick, Alexander S; Fischer, Joachim; Mueller, Jonathan B; Zhou, Lu; Nienhaus, Gerd Ulrich; Bastmeyer, Martin; Barner-Kowollik, Christopher; Wegener, Martin

2017-06-27

Recent developments in stimulated-emission depletion (STED) microscopy have led to a step change in the achievable resolution and allowed breaking the diffraction limit by large factors. The core principle is based on a reversible molecular switch, allowing for light-triggered activation and deactivation in combination with a laser focus that incorporates a point or line of zero intensity. In the past years, the concept has been transferred from microscopy to maskless laser lithography, namely direct laser writing (DLW), in order to overcome the diffraction limit for optical lithography. Herein, we propose and experimentally introduce a system that realizes such a molecular switch for lithography. Specifically, the population of intermediate-state photoenol isomers of α-methyl benzaldehydes generated by two-photon absorption at 700 nm fundamental wavelength can be reversibly depleted by simultaneous irradiation at 440 nm, suppressing the subsequent Diels-Alder cycloaddition reaction which constitutes the chemical core of the writing process. We demonstrate the potential of the proposed mechanism for STED-inspired DLW by covalently functionalizing the surface of glass substrates via the photoenol-driven STED-inspired process exploiting reversible photoenol activation with a polymerization initiator. Subsequently, macromolecules are grown from the functionalized areas and the spatially coded glass slides are characterized by atomic-force microscopy. Our approach allows lines with a full-width-at-half-maximum of down to 60 nm and line gratings with a lateral resolution of 100 nm to be written, both surpassing the diffraction limit.

Reduction of nanowire diameter beyond lithography limits by controlled catalyst dewetting

International Nuclear Information System (INIS)

Calahorra, Yonatan; Kerlich, Alexander; Gavrilov, Arkady; Cohen, Shimon; Ritter, Dan; Amram, Dor

2016-01-01

Catalyst assisted vapour-liquid–solid is the most common method to realize bottom-up nanowire growth; establishing a parallel process for obtaining nanoscale catalysts at pre-defined locations is paramount for further advancement towards commercial nanowire applications. Herein, the effect of a selective area mask on the dewetting of metallic nanowire catalysts, deposited within lithography-defined mask pinholes, is reported. It was found that thin disc-like catalysts, with diameters of 120–450 nm, were transformed through dewetting into hemisphere-like catalysts, having diameters 2–3 fold smaller; the process was optimized to about 95% yield in preventing catalyst splitting, as would otherwise be expected due to their thickness-to-diameter ratio, which was as low as 1/60. The catalysts subsequently facilitated InP and InAs nanowire growth. We suggest that the mask edges prevent surface migration mediated spreading of the dewetted metal, and therefore induce its agglomeration into a single particle. This result presents a general strategy to diminish lithography-set dimensions for NW growth, and may answer a fundamental challenge faced by bottom-up nanowire technology. (paper)

Toward Project-based Learning and Team Formation in Open Learning Environments

NARCIS (Netherlands)

Spoelstra, Howard; Van Rosmalen, Peter; Sloep, Peter

2014-01-01

Open Learning Environments, MOOCs, as well as Social Learning Networks, embody a new approach to learning. Although both emphasise interactive participation, somewhat surprisingly, they do not readily support bond creating and motivating collaborative learning opportunities. Providing project-based

Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

International Nuclear Information System (INIS)

Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

2015-01-01

Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns

Motivating Students to Develop Satellites in a Problem and Project-Based Learning Environment

DEFF Research Database (Denmark)

Larsen, Jesper Abildgaard; Nielsen, Jens Frederik Dalsgaard; Zhou, Chunfang

2013-01-01

During the last decade, a total of three student satellites have been developed by engineering students in a Problem and Project-Based Learning (PBL) environment at Aalborg University (AAU), Denmark. As solving such a complex project, we emphasize that a high level of motivation is needed for the...

Latex particle template lift-up guided gold wire-networks via evaporation lithography

KAUST Repository

Lone, Saifullah; Vakarelski, Ivan Uriev; Chew, Basil; Wang, Zhihong; Thoroddsen, Sigurdur T

2014-01-01

We describe a hybrid methodology that combines a two dimensional (2D) monolayer of latex particles (with a pitch size down to 1 μm) prepared by horizontal dry deposition, lift-up of a 2D template onto flat surfaces and evaporation lithography to fabricate metal micro- and nano wire-networks. This journal is

Fabrication and Characterization of Three Dimensional Photonic Crystals Generated by Multibeam Interference Lithography

Science.gov (United States)

Chen, Ying-Chieh

2009-01-01

Multibeam interference lithography is investigated as a manufacturing technique for three-dimensional photonic crystal templates. In this research, optimization of the optical setup and the photoresist initiation system leads to a significant improvement of the optical quality of the crystal, as characterized by normal incidence optical…

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

Science.gov (United States)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

Design considerations of 10 kW-scale, extreme ultraviolet SASE FEL for lithography

CERN Document Server

Pagani, C; Schneidmiller, E A; Yurkov, M V

2001-01-01

The semiconductor industry growth is driven to a large extent by steady advancements in microlithography. According to the newly updated industry road map, the 70 nm generation is anticipated to be available in the year 2008. However, the path to get there is not clear. The problem of construction of extreme ultraviolet (EUV) quantum lasers for lithography is still unsolved: progress in this field is rather moderate and we cannot expect a significant breakthrough in the near future. Nevertheless, there is clear path for optical lithography to take us to sub-100 nm dimensions. Theoretical and experimental work in Self-Amplified Spontaneous Emission (SASE) Free Electron Lasers (FEL) physics and the physics of superconducting linear accelerators over the last 10 years has pointed to the possibility of the generation of high-power optical beams with laser-like characteristics in the EUV spectral range. Recently, there have been important advances in demonstrating a high-gain SASE FEL at 100 nm wavelength (J. Andr...

Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Science.gov (United States)

Cacouris, Theodore; Rao, Rajasekhar; Rokitski, Rostislav; Jiang, Rui; Melchior, John; Burfeindt, Bernd; O'Brien, Kevin

2012-03-01

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.

The fabrication of highly ordered silver nanodot patterns by platinum assisted nanoimprint lithography

International Nuclear Information System (INIS)

Yoo, Hae-Wook; Jung, Jin-Mi; Lee, Su-kyung; Jung, Hee-Tae

2011-01-01

Silver has been widely used for optical sensing and imaging applications which benefit from localized surface plasmon resonance (LSPR) in a nanoscale configuration. Many attempts have been made to fabricate and control silver nanostructures in order to improve the high performance in sensing and other applications. However, a fatal mechanical weakness of silver and a lack of durability in oxygen-rich conditions have disrupted the manufacturing of reproducible nanostructures by the top-down lithography approach. In this study, we suggest a steady fabrication strategy to obtain highly ordered silver nanopatterns that are able to provide tunable LSPR characteristics. By using a protecting layer of platinum on a silver surface in the lithography process, we successfully obtained large-area (2.7 x 2.7 mm 2 ) silver nanopatterns with high reproducibility. This large-area silver nanopattern was capable of enhancing the low concentration of a Cy3 fluorescence signal (∼10 -10 M) which was labeled with DNA oligomers.

X-ray lithography for micro and nanotechnology at RRCAT

International Nuclear Information System (INIS)

Shukla, Rahul; Dhamgaye, V.P.; Jain, V.K.; Lodha, G.S.

2013-01-01

At Indus-2 Soft and Deep X-ray Lithography beamline (BL-07) is functional and is capable of developing various high aspect ratio and high resolution structures at micro and nano scale. These micro and nano structures can be made to work as a mechanism, sensor, actuator and transducer for varieties of applications and serve as basic building blocks for the development of X-ray and IR optics, LASERs, lab-on-a-chip, micromanipulators and nanotechnology. To achieve these goals we have started developing high aspect ratio comb-drives, electrostatic micromotors, micro fluidic channels, X-ray optics and novel transducers for RF applications by Deep X-ray Lithography (DXRL). Comb-drive is one of most studied electrostatic device in MEMS (Micro Electro-Mechanical Systems). It can be used as a sensor, actuator, resonator, energy harvester and filter. Analysis and simulation shows that the comb actuator of aspect ratio 16 (air gap 50 μm) will produce nearly 1.25 μm displacement when DC voltage of 100 V is applied. For fabrication, first time in India, Polyimide X-ray mask is realized and exposure and development is done at BL-7 at RRCAT. The displacement increases as gap between comb finger decreases. Further refinement is in progress to get higher output from high aspect ratio (∼ 80) comb actuators (i.e. 1 μm at 5V). The other important design parameters like resonance frequency, capacitance will also be discussed. (author)

Karlsruhe Nuclear Research Center. Research and development programme 1989

International Nuclear Information System (INIS)

1988-01-01

The R and D activities of the KfK are classified in 10 main research activities: 1) Project fast breeder; 2) separation nozzle method; 3) project nuclear fusion; 4) project reprocessing and waste processing; 5) ultimate storage; 6) environment and safety; 7) solid-state and materials research; 8) nuclear and elementary particle physics; 9) microtechnics e.g. X-ray lithography; 10) materials handling. (HP) [de

75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

Science.gov (United States)

2010-12-28

... Semiconductor Products Made by Advanced Lithography Techniques and Products Containing Same; Notice of... Mexico) (``STC''), alleging a violation of section 337 in the importation, sale for [[Page 81644

Subwavelength optical lithography via classical light: A possible implementation

Science.gov (United States)

You, Jieyu; Liao, Zeyang; Hemmer, P. R.; Zubairy, M. Suhail

2018-04-01

The resolution of an interferometric optical lithography system is about the half wavelength of the illumination light. We proposed a method based on Doppleron resonance to achieve a resolution beyond half wavelength [Phys. Rev. Lett. 96, 163603 (2006), 10.1103/PhysRevLett.96.163603]. Here, we analyze a possible experimental demonstration of this method in the negatively charged silicon-vacancy (SiV-) system by considering realistic experimental parameters. Our results show that quarter wavelength resolution and beyond can be achieved in this system even in room temperature without using perturbation theory.

Optical near-field lithography on hydrogen-passivated silicon surfaces

DEFF Research Database (Denmark)

Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

1996-01-01

by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.......We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

Multichannel silicon WDM ring filters fabricated with DUV lithography

Science.gov (United States)

Lee, Jong-Moo; Park, Sahnggi; Kim, Gyungock

2008-09-01

We have fabricated 9-channel silicon wavelength-division-multiplexing (WDM) ring filters using 193 nm deep-ultraviolet (DUV) lithography and investigated the spectral properties of the ring filters by comparing the transmission spectra with and without an upper cladding. The average channel-spacing of the 9-channel WDM ring filter with a polymeric upper cladding is measured about 1.86 nm with the standard deviation of the channel-spacing about 0.34 nm. The channel crosstalk is about -30 dB, and the minimal drop loss is about 2 dB.

Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

Science.gov (United States)

Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

2013-03-01

In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

Aligned nanowire growth using lithography-assisted bonding of a polycarbonate template for neural probe electrodes

International Nuclear Information System (INIS)

Yoon, Hargsoon; Deshpande, Devesh C; Ramachandran, Vasuda; Varadan, Vijay K

2008-01-01

This research presents a fabrication method of vertically aligned nanowires on substrates using lithography-assisted template bonding (LATB) towards developing highly efficient electrodes for biomedical applications at low cost. A polycarbonate template containing cylindrical nanopores is attached to a substrate and the nanopores are selectively opened with a modified lithography process. Vertically aligned nanowires are grown by electrochemical deposition through these open pores on polyimide film and silicon substrates. The process of opening the nanopores is optimized to yield uniform growth of nanowires. The morphological, crystalline, and electrochemical properties of the resulting vertically aligned nanowires are discussed using scanning electron microscopy (SEM), x-ray diffraction (XRD), and electrochemical analysis tools. The potential application of this simple and inexpensive fabrication technology is discussed in the development of neural probe electrodes

Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

Science.gov (United States)

Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

2018-05-24

Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Science.gov (United States)

Kozawa, Takahiro; Oizumi, Hiroaki; Itani, Toshiro; Tagawa, Seiichi

2010-11-01

The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.

Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture

NARCIS (Netherlands)

Xie, S.; Luttge, R.

2014-01-01

In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We

75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

Science.gov (United States)

2010-07-27

... Advanced Lithography Techniques and Products Containing Same; Notice of Investigation AGENCY: U.S... violations of section 337 based upon the importation into the United States, the sale for importation, and the sale within the United States after importation of certain semiconductor products made by advanced...

Masks for extreme ultraviolet lithography

International Nuclear Information System (INIS)

Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

1998-01-01

In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

Focal relationships and the environment of project marketing. A literature review with suggestions for practitioners and future research

DEFF Research Database (Denmark)

Skaates, Maria Anne; Tikkanen, Henrikki

2000-01-01

of the review is upon the connection between focal relationships and the wider environment in which project marketing and systems selling takes place. First, several common definitions of projects and project marketing are presented and discussed. Second, the implications of three specific features of project......Project marketing is an important mode of business-to-business marketing today. This paper assesses recent project marketing contributions, including predominantly those of members of the (mainly European) International Network for Project Marketing and Systems Selling (INPM). The emphasis...... business - discontinuity, uniqueness, and complexity - for the focal relationship and the broader marketing environment are considered at the level of multiple projects. Third, three overlapping types of postures that project-selling firms can adopt in relation to their focal relationships...

LP DAAC MEaSUREs Project Artifact Tracking Via the NASA Earthdata Collaboration Environment

Science.gov (United States)

Bennett, S. D.

2015-12-01

The Land Processes Distributed Active Archive Center (LP DAAC) is a NASA Earth Observing System (EOS) Data and Information System (EOSDIS) DAAC that supports selected EOS Community non-standard data products such as the Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) Global Emissivity Database (GED), and also supports NASA Earth Science programs such as Making Earth System Data Records for Use in Research Environments (MEaSUREs) to contribute in providing long-term, consistent, and mature data products. As described in The LP DAAC Project Lifecycle Plan (Daucsavage, J.; Bennett, S., 2014), key elements within the Project Inception Phase fuse knowledge between NASA stakeholders, data producers, and NASA data providers. To support and deliver excellence for NASA data stewardship, and to accommodate long-tail data preservation with Community and MEaSUREs products, the LP DAAC is utilizing NASA's own Earthdata Collaboration Environment to bridge stakeholder communication divides. By leveraging a NASA supported platform, this poster describes how the Atlassian Confluence software combined with a NASA URS/Earthdata support can maintain each project's members, status, documentation, and artifact checklist. Furthermore, this solution provides a gateway for project communities to become familiar with NASA clients, as well as educating the project's NASA DAAC Scientists for NASA client distribution.

Studies on applications of functional organic-thin-films for lithography on semiconductor device production

International Nuclear Information System (INIS)

Ogawa, Kazufumi

1988-12-01

This report describes some experimental results of studies in an attempt to contribute to the development of ultra-fine lithography which is used for the manufacture of semiconductor devices with design rule below 0.5 μm, and contains (1) manufacture of the exposure apparatus, (2) establishment of the resist process technology, and (3) preparation of the resist materials. The author designed and manufactured the KrF excimer laser stepper which is supposed to be most promising for practical uses. In the resist processing technology, the water-soluble contrast enhanced lithography (CEL) process was developed and this process has advantages is that high pattern contrast and large focus depth latitude were easily obtained. Finally, for resist materials, use of Langmuir-Blodgett (LB) films was investigated since the LB technique provides the method to prepare extremely thin organic films which are uniform in molecular level, and the reaction mechanism of the LB films of unsaturated compounds under irradiation with high energy beams was elucidated. (author)

Teaching, Doing, and Sharing Project Management in a Studio Environment: The Development of an Instructional Design Open-Source Project Management Textbook

Science.gov (United States)

Randall, Daniel L.; Johnson, Jacquelyn C.; West, Richard E.; Wiley, David A.

2013-01-01

In this article, the authors present an example of a project-based course within a studio environment that taught collaborative innovation skills and produced an open-source project management textbook for the field of instructional design and technology. While innovation plays an important role in our economy, and many have studied how to teach…

Establishing an EnvironMentors Project to Guide Minority Students into Science, Technology, and Environmental Careers

Energy Technology Data Exchange (ETDEWEB)

Montague, W. E.

2003-01-24

This report of the EnvironMentors Project (TEP) for the period February 1994 through December 1998, provides a summary of activities at our program sites and of our overall organizational accomplishments. Notably, the EnvironMentors Project matched 506 teens from under-resourced neighborhoods in Washington (DC), Trenton (NJ), and Baltimore (MD) with mentors, engaged more than 1,600 members of the public in informative discussions of environmental research, and presented interactive environmental education lessons to approximately 5,700 elementary and middle school children.

X-ray lithography source (SXLS) vacuum system

International Nuclear Information System (INIS)

Schuchman, J.C.; Aloia, J.; Hsieh, H.; Kim, T.; Pjerov, S.

1989-01-01

In 1988 Brookhaven National Laboratory (BNL) was awarded a contract to design and construct a compact light source for x-ray lithography. This award is part of a technology transfer-to-American-industry program. The contract is for an electron storage ring designed for 690 MeV-500 ma operations. It has a racetrack configuration with a circumference to 8.5 meters. The machine is to be constructed in two phases. Phase I (200 MeV-500ma) will primarily be for low energy injection studies and will incorporate all room temperature magnets. For Phase II the two room temperature dipole magnets will be replaced with (4T) superconducting magnets and operation will be at 690 MeV. This paper describes the vacuum system for this machine. 9 refs

Probing Leader Cells in Endothelial Collective Migration by Plasma Lithography Geometric Confinement

OpenAIRE

Yongliang Yang; Nima Jamilpour; Baoyin Yao; Zachary S. Dean; Reza Riahi; Pak Kin Wong

2016-01-01

When blood vessels are injured, leader cells emerge in the endothelium to heal the wound and restore the vasculature integrity. The characteristics of leader cells during endothelial collective migration under diverse physiological conditions, however, are poorly understood. Here we investigate the regulation and function of endothelial leader cells by plasma lithography geometric confinement generated. Endothelial leader cells display an aggressive phenotype, connect to follower cells via pe...

All-dry resist processes for 193-nm lithography

Science.gov (United States)

Horn, Mark W.; Maxwell, Brian E.; Kunz, Roderick R.; Hibbs, Michael S.; Eriksen, Lynn M.; Palmateer, Susan C.; Forte, Anthony R.

1995-06-01

We report on two different all-dry resist schemes for 193-nm lithography, one negative tone and one positive tone. Our negative tone resist is an extension of our initial work on all-dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225-micrometers and 0.200-micrometers line and space features were obtained at a dose of approximately 58 mJ/cm2. Dry development of the exposed resist was accomplished using Cl2 chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. Recently, we have also developed an all-dry positive-tone silylation photoresist. This photoresist is a PECVD carbon-based polymer which is crosslinked by 193-nm exposure, enabling selective silylation similar to that initially reported by Hartney et al., with spin-applied polymers. In those polymers, for example polyvinylphenol, the silylation site concentration is fixed by the hydroxyl groups on the polymer precursors, thus limiting the silicon uptake per unit volume. With PECVD polymers, the total concentration of silylation sites and their depth can be tailored by varying plasma species as a function of time during the deposition. This affords the possibility of greater silicon uptake per unit volume and better depth control of the silylation profile. Figure 2 shows a SEM of 0.5-micrometers features patterned in plasma deposited silylation resist.

Nanostructured Polymer Brushes by UV-Assisted Imprint Lithography and Surface-Initiated Polymerization for Biological Functions

NARCIS (Netherlands)

Benetti, Edmondo Maria; Acikgoz, C.; Sui, Xiaofeng; Vratzov, Boris; Hempenius, Mark A.; Huskens, Jurriaan; Vancso, Gyula J.

2011-01-01

Functional polymer brush nanostructures are obtained by combining step-and-flash imprint lithography (SFIL) with controlled, surface-initiated polymerization (CSIP). Patterning is achieved at length scales such that the smallest elements have dimensions in the sub-100 nm range. The patterns exhibit

Accelerated yield learning in agressive lithography

Science.gov (United States)

Monahan, Kevin M.; Ashkenaz, Scott M.; Chen, Xing; Lord, Patrick J.; Merrill, Mark A.; Quattrini, Rich; Wiley, James N.

2000-06-01

As exposure wavelengths decrease from 248 nm to 193, 157, and even 13 nm (EUV), small process defects can cause collapse of the lithographic process window near the limits of resolution, particularly for the gate and contact structures in high- performance devices. Such sensitivity poses a challenge for lithography process module control. In this work, we show that yield loss can be caused by a combination of macro, micro, CD, and overlay defects. A defect is defined as any yield- affecting process variation. Each defect, regardless of cause, is assumed to have a specific 'kill potential.' The accuracy of the lithographic yield model can be improved by identifying those defects with the highest kill potential or, more importantly, those that pose the highest economic risk. Such economic considerations have led us to develop a simple heuristic model for understanding sampling strategies in defect metrology and for linking metrology capability to yield and profitability.

Reversible chemical patterning on stimuli-responsive polymer film: Environment-responsive lithography

International Nuclear Information System (INIS)

Ionov, Leonid; Minko, Sergiy; Stamm, Manfred; Gohy, Jean-Francois; Jerome, Robert; Scholl, Andreas

2003-01-01

We report on a novel type of chemical patterning based on thin stimuli-responsive polymer films. The basic concept is the permanent storage (writing) of a pattern, which is reversibly developed and erased upon exposure to appropriate environment, e.g., solvent, pH, and temperature. The smart surface is fabricated from the mixed brush of poly(2-vinylpyridine) and polyisoprene. The mixed brush demonstrates switching behavior upon exposure to different solvents. Cross-linking of polyisoprene via illumination through a photomask results in formation of patterns with suppressed switching. Due to the contrast in switching between illuminated and dark areas, exposure of the smart surface to different solvents causes either reversible formation or erasing of chemical contrast between the illuminated and dark areas. Thus, the pattern surface can very locally attract colloidal particles or can be wetted by water only upon exposure to the special solvent which introduces the contrast between the illuminated and dark areas. Appearance of the patterns indicates particular environment and can be used for local switching of adsorption

Application of high-resolution film for lithography to synchrotron X-ray topography

International Nuclear Information System (INIS)

Mizuno, Kaoru; Ito, Kazuyoshi; Iwami, Masayuki; Hashimoto, Eiji; Kino, Takao.

1994-01-01

A high-resolution film for lithography is applied to a detector for synchrotron radiation topography, instead of a nuclear plate. The film shows much better resolution than that of the plate although exposure time an about 500 times longer is required. The size distribution of interstitial loops grown as vacancy sources in a nearly perfect aluminum crystal after a temperature rise is examined from the while beam topograph. (author)

Classroom Environment in the Implementation of an Innovative Curriculum Project in Science Education.

Science.gov (United States)

Suarez, Mercedes; Pias, Rosa; Membiela, Pedro; Dapia, Dolores

1998-01-01

Analyzes the perceptions of students, teachers, and external observers in order to study the influence of classroom environment on the implementation of an innovative project in science education. Contains 33 references. (DDR)

New non-chemically amplified molecular resist design with switchable sensitivity for multi-lithography applications and nanopatterning

Science.gov (United States)

Thakur, Neha; Guruprasad Reddy, Pulikanti; Nandi, Santu; Yogesh, Midathala; Sharma, Satinder K.; Pradeep, Chullikkattil P.; Ghosh, Subrata; Gonsalves, Kenneth E.

2017-12-01

The development of new photoresist materials for multi-lithography applications is crucial but a challenging task for semiconductor industries. During the last few decades, given the need for new resists to meet the requirements of semiconductor industries, several research groups have developed different resist materials for specific lithography applications. In this context, we have successfully synthesized a new molecular non-chemically amplified resist (n-CAR) (C3) based on the functionalization of aromatic hydroxyl core (4,4‧-(9H-fluorene-9,9-diyl)diphenol) with radiation sensitive sulfonium triflates for various lithography applications. While, micron scale features have been developed using i-line (365 nm) and DUVL (254 nm) exposure tools, electron beam studies on C3 thin films enabled us to pattern 20 nm line features with L/3S (line/space) characteristics on the silicon substrate. The sensitivity and contrast were calculated from the contrast curve analysis as 280 µC cm-2 and 0.025 respectively. Being an important parameter for any newly developed resists, the line edge roughness (LER) of 30 nm (L/5S) features were calculated, using SUMMIT metrology package, to be 3.66  ±  0.3 nm and found to be within the acceptable range. AFM analysis further confirmed 20 nm line width with smooth pattern wall. No deformation of patterned features was observed during AFM analysis which indicated good adhesion property between patterned resists and silicon substrates.

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Compact 13.5-nm free-electron laser for extreme ultraviolet lithography

Directory of Open Access Journals (Sweden)

Y. Socol

2011-04-01

Full Text Available Optical lithography has been actively used over the past decades to produce more and more dense integrated circuits. To keep with the pace of the miniaturization, light of shorter and shorter wavelength was used with time. The capabilities of the present 193-nm UV photolithography were expanded time after time, but it is now believed that further progress will require deployment of extreme ultraviolet (EUV lithography based on the use of 13.5-nm radiation. However, presently no light source exists with sufficient average power to enable high-volume manufacturing. We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energy-recovery linac (ERL. The proposed 40×20  m^{2} facility, using MW-scale consumption from the power grid, is estimated to provide about 5 kW of average EUV power. We elaborate the self-amplified spontaneous emission (SASE option, which is presently technically feasible. A regenerative-amplifier option is also discussed. The proposed design is based on a short-period (2–3 cm undulator. The corresponding electron beam energy is about 0.5–1.0 GeV. The proposed accelerator consists of a photoinjector, a booster, and a multiturn ERL.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-06-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-04-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Medical students' perceptions of their learning environment during a mandatory research project.

Science.gov (United States)

Möller, Riitta; Ponzer, Sari; Shoshan, Maria

2017-10-20

To explore medical students´ perceptions of their learning environment during a mandatory 20-week scientific research project. This cross-sectional study was conducted between 2011 and 2013. A total of 651 medical students were asked to fill in the Clinical Learning Environment, Supervision, and Nurse Teacher (CLES+T) questionnaire, and 439 (mean age 26 years, range 21-40, 60% females) returned the questionnaire, which corresponds to a response rate of 67%. The Mann-Whitney U test or the Kruskal-Wallis test were used to compare the research environments. The item My workplace can be regarded as a good learning environment correlated strongly with the item There were sufficient meaningful learning situations (r= 0.71, psatisfaction with supervision correlated strongly with the items interaction (r=0.78, p work in close collaboration.

Application status and prospect of X-ray lithography technology

International Nuclear Information System (INIS)

Xie Changqing; Chen Dapeng; Liu Ming; Ye Tianchun; Yi Futing

2004-01-01

Because of its many merits, such as high resolution, large depth of focus, large field size, high throughput, large process latitude, easy extendibility to 50 nm and below ground rule, and so on, the Proximity X-ray Lithography (PXL) is very attractive for the 100 nm and smaller ground rule integrated circuit manufacturing. In this paper, the international research and development status of PXL is briefly introduced firstly, and both its application status and prospect in nanoelectronics research, Monolithic Microwave Integrated Circuits (MMIC) production and silicon-based Ultra Large Scale Integrated Circuits (ULSIC) production are described, and the recent research progress in home PXL is also presented briefly. (authors)

Estimation and control of large-scale systems with an application to adaptive optics for EUV lithography

NARCIS (Netherlands)

Haber, A.

2014-01-01

Extreme UltraViolet (EUV) lithography is a new technology for production of integrated circuits. In EUV lithographic machines, optical elements are heated by absorption of exposure energy. Heating induces thermoelastic deformations of optical elements and consequently, it creates wavefront

Grassroots projects aimed at the built environment: Association with neighbourhood deprivation, land-use mix and injury risk to road users.

Science.gov (United States)

Dubé, Anne Sophie; Beausoleil, Maude; Gosselin, Céline; Beaulme, Ginette; Paquin, Sophie; Pelletier, Anne; Goudreau, Sophie; Poirier, Marie-Hélène; Drouin, Louis; Gauvin, Lise

2014-07-09

1) To describe grassroots projects aimed at the built environment and associated with active transportation on the Island of Montreal; and 2) to examine associations between the number of projects and indicators of neighbourhood material and social deprivation and the built environment. We identified funding agencies and community groups conducting projects on built environments throughout the Island of Montreal. Through website consultation and a snowballing procedure, we inventoried projects that aimed at transforming built environments and that were carried out by community organizations between January 1, 2006, and November 1, 2010. We coded and validated information about project activities and created an interactive map using Geoclip software. Correlational analyses quantified associations between number of projects, neighbourhood characteristics and deprivation. A total of 134 community organizations were identified, and 183 grassroots projects were inventoried. A large number of projects were aimed at increasing awareness of/improving active or public transportation (n=95), improving road safety (n=84) and enhancing neighbourhood beautification and greening (n=69). The correlation between the presence of projects and the extent of neighbourhood material deprivation was small (Kendall's t=0.26, p<0.001), but in areas with greater social deprivation there were more projects (Kendall's t=0.38, p<0.001). Larger numbers of projects were also associated with the presence of more extensive land-use mix (Kendall's t=0.23, p<0.001) and a greater proportion of road intersections with injured pedestrians, cyclists and motor vehicle users (Kendall's t=0.43, p<0.001). There is significant community mobilization around built environments and active transportation. Investigations of the implementation processes and impacts are warranted.

Double-layer imprint lithography on wafers and foils from the submicrometer to the millimeter scale

NARCIS (Netherlands)

Moonen, P.F.; Yakimets, I.; Peter, M.; Meinders, E.R.; Huskens, J.

2011-01-01

In this paper, a thermal imprint technique, double-layer nanoimprint lithography (dlNIL), is introduced, allowing complete filling of features in the dimensional range of submicrometer to millimeter. The imprinting and filling quality of dlNIL was studied on Si substrates as a model system and

Fabrication of sub-micrometric metallic hollow-core structures by laser interference lithography

International Nuclear Information System (INIS)

Pérez, Noemí; Tavera, Txaber; Rodríguez, Ainara; Ellman, Miguel; Ayerdi, Isabel; Olaizola, Santiago M.

2012-01-01

Highlights: ► Arrays of hollow-core sub-micrometric structures are fabricated. ► Laser interference lithography is used for the pattering of the resist sacrificial layer. ► The removal of the sacrificial layer gives rise to metallic channels with a maximum crosssectional area of 0.1 μm 2 . ► These structures can be used in nanofluidics. - Abstract: This work presents the fabrication of hollow-core metallic structures with a complete laser interference lithography (LIL) process. A negative photoresist is used as sacrificial layer. It is exposed to the pattern resulting from the interference of two laser beams, which produces a structure of photoresist lines with a period of 600 nm. After development of the resist, platinum is deposited on the samples by DC sputtering and the resist is removed with acetone. The resulting metallic structures consist in a continuous platinum film that replicates the photoresist relief with a hollow core. The cross section of the channels is up to 0.1 μm 2 . The fabricated samples are characterized by FESEM and FIB. This last tool helps to provide a clear picture of the shape and size of the channels. Conveniently dimensioned, this array of metallic submicrometric channels can be used in microfluidic or IC cooling applications.

Rapid manufacturing of low-noise membranes for nanopore sensors by trans-chip illumination lithography

International Nuclear Information System (INIS)

Janssen, Xander J A; Jonsson, Magnus P; Plesa, Calin; Soni, Gautam V; Dekker, Cees; Dekker, Nynke H

2012-01-01

In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane supported on a silicon chip can be rapidly fabricated using standard microfabrication methods, chips with additional insulating layers beyond the membrane region can provide significantly lower noise levels, but at the expense of requiring more costly and time-consuming fabrication steps. Here we present a novel fabrication protocol that overcomes this issue by enabling rapid and reproducible manufacturing of low-noise membranes for nanopore experiments. The fabrication protocol, termed trans-chip illumination lithography, is based on illuminating a membrane-containing wafer from its backside such that a photoresist (applied on the wafer’s top side) is exposed exclusively in the membrane regions. Trans-chip illumination lithography permits the local modification of membrane regions and hence the fabrication of nanopore chips containing locally patterned insulating layers. This is achieved while maintaining a well-defined area containing a single thin membrane for nanopore drilling. The trans-chip illumination lithography method achieves this without relying on separate masks, thereby eliminating time-consuming alignment steps as well as the need for a mask aligner. Using the presented approach, we demonstrate rapid and reproducible fabrication of nanopore chips that contain small (12 μm × 12 μm) free-standing silicon nitride membranes surrounded by insulating layers. The electrical noise characteristics of these nanopore chips are shown to be superior to those of simpler designs without insulating layers and comparable in quality to more complex designs that are more challenging to fabricate. (paper)

Process strategies for ultra-deep x-ray lithography at the Advanced Photon Source

International Nuclear Information System (INIS)

Mancini, D.C.; Moldovan, N.; Divan, R.; De Carlo, F.; Yaeger, J.

2001-01-01

For the past five years, we have been investigating and advancing processing capabilities for deep x-ray lithography (DXRL) using synchrotron radiation from a bending magnet at the Advanced Photon Source (APS), with an emphasis on ultra-deep structures (1mm to 1cm thick). The use of higher-energy x-rays has presented many challenges in developing optimal lithographic techniques for high-aspect ratio structures: mask requirements, resist preparation, exposure, development, and post-processing. Many problems are more severe for high-energy exposure of thicker films than for sub-millimeter structures and affect resolution, processing time, adhesion, damage, and residue. A number of strategies have been created to overcome the challenges and limitations of ultra-deep x-ray lithography (UDXRL), that have resulted in the current choices for mask, substrate, and process flow at the APS. We describe our current process strategies for UDXRL, how they address the challenges presented, and their current limitations. We note especially the importance of the process parameters for use of the positive tone resist PMMA for UDXRL, and compare to the use of negative tone resists such as SU-8 regarding throughput, resolution, adhesion, damage, and post-processing.

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

Science.gov (United States)

Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

2006-03-01

In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

Surface-enhanced Raman scattering active gold nanoparticle/nanohole arrays fabricated through electron beam lithography

Science.gov (United States)

Wu, Tsunghsueh; Lin, Yang-Wei

2018-03-01

Effective surface-enhanced Raman scattering (SERS)-active substrates from gold nanoparticle and gold nanohole arrays were successfully fabricated through electron beam lithography with precise computer-aided control of the unit size and intergap distance. Their SERS performance was evaluated using 4-mercaptobenzoic acid (4-MBA). These gold arrays yielded strong SERS signals under 785 nm laser excitation. The enhancement factors for 4-MBA molecules on the prepared gold nanoparticle and nanohole arrays maxed at 1.08 × 107 and 8.61 × 106, respectively. The observed increase in SERS enhancement was attributed to the localized surface plasmon resonance (LSPR) wavelength shifting toward the near-infrared regime when the gold nanohole diameter increased, in agreement with the theoretical prediction in this study. The contribution of LSPR to the Raman enhancement from nanohole arrays deposited on fluorine-doped tin oxide glass was elucidated by comparing SERS and transmission spectra. This simple fabrication procedure, which entails employing electron beam lithography and the controllability of the intergap distance, suggests highly promising uses of nanohole arrays as functional components in sensing and photonic devices.

Site observational work plan for the UMTRA Project Site at Riverton, Wyoming. Revision 3/95

International Nuclear Information System (INIS)

1995-03-01

Ground water compliance for the Uranium Mill Tailings Remedial Action (UMTRA) Project sites, including the Riverton, Wyoming, site, is governed by the Uranium Mill Tailings Radiation Control Act and the US Environmental Protection Agency's Health and Environmental Protection Standards for Uranium and Thorium Mill Tailings. The compliance strategy proposed for this site is natural flushing in conjunction with institutional controls. The essential premise of natural flushing is that ground water movement and natural attenuation processes will reduce the detected contamination to background levels or alternate concentration limits that do not pose a risk to human health or the environment within 100 years. This document contains the following sections. Section 2.0 of this SOWP describes the requirements for meeting standards at UMTRA Project sites. Section 3.0 provides site-specific data and the related conceptual model. Section 4.0 provides the justification for the recommended ground water compliance strategy for the Riverton site. Section 5.0 provides the justification and process for collection and assessment of additional required data. Section 6.0 provides a list of the references cited. The appendixes include data on monitor wells and lithography, ground water, surface water, and sediment quality

Scalable fabrication of strongly textured organic semiconductor micropatterns by capillary force lithography.

Science.gov (United States)

Jo, Pil Sung; Vailionis, Arturas; Park, Young Min; Salleo, Alberto

2012-06-26

Strongly textured organic semiconductor micropatterns made of the small molecule dioctylbenzothienobenzothiophene (C(8)-BTBT) are fabricated by using a method based on capillary force lithography (CFL). This technique provides the C(8)-BTBT solution with nucleation sites for directional growth, and can be used as a scalable way to produce high quality crystalline arrays in desired regions of a substrate for OFET applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective Etching via Soft Lithography of Conductive Multilayered Gold Films with Analysis of Electrolyte Solutions

Science.gov (United States)

Gerber, Ralph W.; Oliver-Hoyo, Maria T.

2008-01-01

This experiment is designed to expose undergraduate students to the process of selective etching by using soft lithography and the resulting electrical properties of multilayered films fabricated via self-assembly of gold nanoparticles. Students fabricate a conductive film of gold on glass, apply a patterned resist using a polydimethylsiloxane…

Formation of isolated carbon nanofibers with hot-wire CVD using nanosphere lithography as catalyst patterning technique

NARCIS (Netherlands)

Houweling, Z.S.; Verlaan, V.; ten Grotenhuis, G.T.; Schropp, R.E.I.

2008-01-01

Recently the site-density control of carbon nanotubes (CNTs) has attracted much attention as this has become critical for its many applications. To obtain an ordered array of catalyst nanoparticles with good monodispersity nanosphere lithography (NSL) is used. These nanoparticles are tested as

Compact electron storage ring JESCOS with normalconducting or superconducting magnets for X-ray lithography

International Nuclear Information System (INIS)

Anton, F.; Klein, U.; Krischel, D.; Anderberg, B.

1992-01-01

The layouts of a normal conducting electron storage ring and a storage ring with superconducting bending magnets are presented. The storage rings have a critical wavelength of 1 nm and are designed as compact sources for X-ray lithography. Each ring fits into a shielded room with a diameter of 14 m. (author) 3 refs.; 5 figs.; 1 tab

Using a Virtual Learning Environment to Manage Group Projects: A Case Study

Science.gov (United States)

Cleary, Yvonne; Marcus-Quinn, Ann

2008-01-01

Virtual Learning Environments (VLEs) are increasingly used by Higher Education Institutions to manage and enhance teaching and learning, and research. Discussion, chat, scheduling, and other collaboration tools make VLEs especially useful systems for designing and managing complex group projects. In the spring semester of 2006, students at the…

Fabrication of hexagonal star-shaped and ring-shaped patterns arrays by Mie resonance sphere-lens-lithography

Science.gov (United States)

Liu, Xianchao; Wang, Jun; Li, Ling; Gou, Jun; Zheng, Jie; Huang, Zehua; Pan, Rui

2018-05-01

Mie resonance sphere-lens-lithography has proved to be a good candidate for fabrication of large-area tunable surface nanopattern arrays. Different patterns on photoresist surface are obtained theoretically by adjusting optical coupling among neighboring spheres with different gap sizes. The effect of light reflection from the substrate on the pattern produced on the photoresist with a thin thickness is also discussed. Sub-micron hexagonal star-shaped and ring-shaped patterns arrays are achieved with close-packed spheres arrays and spheres arrays with big gaps, respectively. Changing of star-shaped vertices is induced by different polarization of illumination. Experimental results agree well with the simulation. By using smaller resonance spheres, sub-400 nm star-shaped and ring-shaped patterns can be realized. These tunable patterns are different from results of previous reports and have enriched pattern morphology fabricated by sphere-lens-lithography, which can find application in biosensor and optic devices.

Merging Bottom-Up with Top-Down: Continuous Lamellar Networks and Block Copolymer Lithography

Science.gov (United States)

Campbell, Ian Patrick

Block copolymer lithography is an emerging nanopatterning technology with capabilities that may complement and eventually replace those provided by existing optical lithography techniques. This bottom-up process relies on the parallel self-assembly of macromolecules composed of covalently linked, chemically distinct blocks to generate periodic nanostructures. Among the myriad potential morphologies, lamellar structures formed by diblock copolymers with symmetric volume fractions have attracted the most interest as a patterning tool. When confined to thin films and directed to assemble with interfaces perpendicular to the substrate, two-dimensional domains are formed between the free surface and the substrate, and selective removal of a single block creates a nanostructured polymeric template. The substrate exposed between the polymeric features can subsequently be modified through standard top-down microfabrication processes to generate novel nanostructured materials. Despite tremendous progress in our understanding of block copolymer self-assembly, continuous two-dimensional materials have not yet been fabricated via this robust technique, which may enable nanostructured material combinations that cannot be fabricated through bottom-up methods. This thesis aims to study the effects of block copolymer composition and processing on the lamellar network morphology of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) and utilize this knowledge to fabricate continuous two-dimensional materials through top-down methods. First, block copolymer composition was varied through homopolymer blending to explore the physical phenomena surrounding lamellar network continuity. After establishing a framework for tuning the continuity, the effects of various processing parameters were explored to engineer the network connectivity via defect annihilation processes. Precisely controlling the connectivity and continuity of lamellar networks through defect engineering and

Fiscal 2000 survey and research achievement report on the survey and research on next-generation EUVL (extreme ultraviolet lithography) technology; 2000 nendo jisedai EUVL (Extreme Ultra-Violet Lithography) gijutsu chosa kenkyu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

While surveys of technical progress and tasks of EUVL in Japan and overseas are under way for submitting a proposition for the industrialization of EUVL technology by expatiating the results of the EUVL research and development program scheduled to be complete in fiscal 2001, the future of EUVL is considered. The survey results are summarized in five chapters which involve (1) the outlines of survey and research results, (2) technical trends of lithography, (3) systems for EUVL research and development in the world, and (5) the conclusion. In chapter (4), light sources, systems (exposure devices), masks, resists, and other element technologies are investigated. The survey results about light sources involve the background against which their development is described, performance that an extreme ultraviolet ray source is requested to have, candidate EUVL light sources, their technical features and tasks they present, and the latest trends overseas. Concerning the exposure device, the body (device constitution), stage, sensor, projection system, and the irradiation system are investigated. As for masks, the outline of a EUVL mask, masking substrate, multilayer film fabrication, masking pattern formation, and other tasks for development are investigated. (NEDO)

CONSTRUCTION PROJECTS VERSUS THE PROTECTION OF NATURE AND ENVIRONMENT

Directory of Open Access Journals (Sweden)

Elżbieta Hanna Szafranko

2017-02-01

Full Text Available Construction investments are related to the economic development of each country. Expansion of towns and settlements, construction, industrial, commercial and recreational objects and the communication network is necessary and results from regional development strategies. For their implementation it is necessary to prepare the area designated for their development. In many regions of our country area suitable for construction are increasingly limited, and furthermore investors often looks for an attractive investment location. For this reason, more and more construction projects dangerously close to areas of high natural value and protected and often are entering the these areas. To minimize the negative investment impact on the environment there are developed several variants of investment. Next, assessing the positive and negative effects, we choose the best, from the point of view of the surrounding environment solution. To illustrate the procedure example of analysis using the method proposed by the author, the indicator is shown.

Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells

Directory of Open Access Journals (Sweden)

Daniel Inns

2007-01-01

Full Text Available A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other nanosphere lithography method, while this batch process used for masking is much faster, making it more industrially relevant.

Rapid fabrication of microneedles using magnetorheological drawing lithography.

Science.gov (United States)

Chen, Zhipeng; Ren, Lei; Li, Jiyu; Yao, Lebin; Chen, Yan; Liu, Bin; Jiang, Lelun

2018-01-01

Microneedles are micron-sized needles that are widely applied in biomedical fields owing to their painless, minimally invasive, and convenient operation. However, most microneedle fabrication approaches are costly, time consuming, involve multiple steps, and require expensive equipment. In this study, we present a novel magnetorheological drawing lithography (MRDL) method to efficiently fabricate microneedle, bio-inspired microneedle, and molding-free microneedle array. With the assistance of an external magnetic field, the 3D structure of a microneedle can be directly drawn from a droplet of curable magnetorheological fluid. The formation process of a microneedle consists of two key stages, elasto-capillary self-thinning and magneto-capillary self-shrinking, which greatly affect the microneedle height and tip radius. Penetration and fracture tests demonstrated that the microneedle had sufficient strength and toughness for skin penetration. Microneedle arrays and a bio-inspired microneedle were also fabricated, which further demonstrated the versatility and flexibility of the MRDL method. Microneedles have been widely applied in biomedical fields owing to their painless, minimally invasive, and convenient operation. However, most microneedle fabrication approaches are costly, time consuming, involve multiple steps, and require expensive equipment. Furthermore, most researchers have focused on the biomedical applications of microneedles but have given little attention to the optimization of the fabrication process. This research presents a novel magnetorheological drawing lithography (MRDL) method to fabricate microneedle, bio-inspired microneedle, and molding-free microneedle array. In this proposed technique, a droplet of curable magnetorheological fluid (CMRF) is drawn directly from almost any substrate to produce a 3D microneedle under an external magnetic field. This method not only inherits the advantages of thermal drawing approach without the need for a mask

MEE-project: One year of public relations on the environment and energy. MEE-projekt: Een jaar voorlichten over milieu en energie

Energy Technology Data Exchange (ETDEWEB)

Anon.

1991-06-26

A final overview is presented of the MEE-project ('Milieu- En Energie projekt' or Environmental and Energy project). The MEE-project was aimed at stimulating energy saving and improving the public attitude concerning energy and the environment. The project is also considered as an employment project for the unemployed. The main target group of the project was the households in the Dutch municipality Heerhugowaard. Five persons in search of employment offered interested private households options to save energy and the environment within their own surroundings by means of information and documentation. 5610 information packets were delivered. The costs did not exceed 115,000 Dutch guilders. The overall conclusion is positive: the people of the municipality are active in trying to save energy and the environment. Four of the five project members have new and better perspectives for a job.

The impact of 14-nm photomask uncertainties on computational lithography solutions

Science.gov (United States)

Sturtevant, John; Tejnil, Edita; Lin, Tim; Schultze, Steffen; Buck, Peter; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-04-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, which must balance accuracy demands with simulation runtime boundary conditions, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned to wafer CD data over a small range around the presumed set point, it can be dangerous to do so since CD errors can alias across multiple input variables. Therefore, many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine with a simulation sensitivity study, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD Bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and awareness.

Accurate lithography simulation model based on convolutional neural networks

Science.gov (United States)

Watanabe, Yuki; Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki

2017-07-01

Lithography simulation is an essential technique for today's semiconductor manufacturing process. In order to calculate an entire chip in realistic time, compact resist model is commonly used. The model is established for faster calculation. To have accurate compact resist model, it is necessary to fix a complicated non-linear model function. However, it is difficult to decide an appropriate function manually because there are many options. This paper proposes a new compact resist model using CNN (Convolutional Neural Networks) which is one of deep learning techniques. CNN model makes it possible to determine an appropriate model function and achieve accurate simulation. Experimental results show CNN model can reduce CD prediction errors by 70% compared with the conventional model.

Mechanical design of SXLS (Superconducting X-ray Lithography Source) radio-frequency cavity

Energy Technology Data Exchange (ETDEWEB)

Mortazavi, P.; Sharma, S.; Keane, J.; Thomas, M.

1989-01-01

This paper presents the mechanical design of a Radio-Frequency (RF) cavity to be used on a compact storage ring for Superconducting X-ray Lithography Source (SXLS). Various design features of this cavity are discussed, including basic geometrical configuration, structural design, initial and operational tuning, vacuum multipactoring, power window, and damping of higher order modes. A second application of this cavity design for beam life extension in an existing storage ring is also described. 2 refs., 6 figs.

Mechanical design of SXLS [Superconducting X-ray Lithography Source] radio-frequency cavity

International Nuclear Information System (INIS)

Mortazavi, P.; Sharma, S.; Keane, J.; Thomas, M.

1989-01-01

This paper presents the mechanical design of a Radio-Frequency (RF) cavity to be used on a compact storage ring for Superconducting X-ray Lithography Source (SXLS). Various design features of this cavity are discussed, including basic geometrical configuration, structural design, initial and operational tuning, vacuum multipactoring, power window, and damping of higher order modes. A second application of this cavity design for beam life extension in an existing storage ring is also described. 2 refs., 6 figs

Low-defect reflective mask blanks for extreme ultraviolet lithography

International Nuclear Information System (INIS)

Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Ray-Chaudhuri, A; Walton, C.

1999-01-01

Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA road map well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm ampersand sup2; at sign 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm ampersand sup2; for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm ampersand sup2; in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10 -2 /cm ampersand sup2; level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling

Communication, coordination and cooperation in construction projects: business environment and human behaviours

Science.gov (United States)

Salah Alaloul, Wesam; Shahir Liew, Mohd; Zawawi, Noor Amila Wan

2017-12-01

The accomplishment of construction projects is extremely dependent on the integration of several stakeholders; therefore none of them has the control or the ability to accomplish the project alone. Each of them may influence and be influenced by the project management approach. There is no comprehensive theoretical platform for defining Communication, Coordination and Cooperation (3Cs) in the management of construction project. This paper deliberates the function of the 3Cs different theoretical perceptions. Through an analysis of selected articles from reputable academic journals in construction management, the business environment and human behaviour were identified as two main parts. A little has been done so far about the 3Cs, and how they are correlated with construction projects performance. Therefore, the objective of this paper is to explain the definitions and the association between the 3Cs. There is a significant link between communication and coordination. Coordination alternatively, is trust-based a logic of mutual and exchange. Consequently, cooperation is much more sophisticated, which needing more time and attempts.

Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching

Science.gov (United States)

Ichikawa, Takashi; Yagisawa, Takashi; Furukawa, Shinichi; Taguchi, Takafumi; Nojima, Shigeki; Murakami, Sadatoshi; Tamaoki, Naoki

2018-06-01

A topography simulation of high-aspect-ratio etching considering transports of ions and neutrals is performed, and the mechanism of reactive ion etching (RIE) residues in three-dimensional corner patterns is revealed. Limited ion flux and CF2 diffusion from the wide space of the corner is found to have an effect on the RIE residues. Cooperative simulation of lithography and topography is used to solve the RIE residue problem.

A Pilot Study: Facilitating Cross-Cultural Understanding with Project-Based Collaborative Learning in an Online Environment

Science.gov (United States)

Shadiev, Rustam; Hwang, Wu-Yuin; Huang, Yueh-Min

2015-01-01

This study investigated three aspects: how project-based collaborative learning facilitates cross-cultural understanding; how students perceive project-based collaborative learning implementation in a collaborative cyber community (3C) online environment; and what types of communication among students are used. A qualitative case study approach…

Fabrication and characterization of one- and two-dimensional regular patterns produced employing multiple exposure holographic lithography

DEFF Research Database (Denmark)

Tamulevičius, S.; Jurkevičiute, A.; Armakavičius, N.

2017-01-01

In this paper we describe fabrication and characterization methods of two-dimensional periodic microstructures in photoresist with pitch of 1.2 urn and lattice constant 1.2-4.8 μm, formed using two-beam multiple exposure holographic lithography technique. The regular structures were recorded empl...

Inventory of Federal energy-related environment and safety research for FY 1978. Volume II. Project listings and indexes

Energy Technology Data Exchange (ETDEWEB)

None

1979-12-01

This volume contains summaries of FY-1978 government-sponsored environment and safety research related to energy. Project summaries were collected by Aerospace Corporation under contract with the Department of Energy, Office of Program Coordination, under the Assistant Secretary for Environment. Summaries are arranged by log number, which groups the projects by reporting agency. The log number is a unique number assigned to each project from a block of numbers set aside for each agency. Information about the projects is included in the summary listings. This includes the project title, principal investigators, research organization, project number, contract number, supporting organization, funding level if known, related energy sources with numbers indicating percentages of effort devoted to each, and R and D categories. A brief description of each project is given, and this is followed by subject index terms that were assigned for computer searching and for generating the printed subject index in Volume IV.

Inventory of Federal energy-related environment and safety research for FY 1978. Volume II. Project listings and indexes

International Nuclear Information System (INIS)

1979-12-01

This volume contains summaries of FY-1978 government-sponsored environment and safety research related to energy. Project summaries were collected by Aerospace Corporation under contract with the Department of Energy, Office of Program Coordination, under the Assistant Secretary for Environment. Summaries are arranged by log number, which groups the projects by reporting agency. The log number is a unique number assigned to each project from a block of numbers set aside for each agency. Information about the projects is included in the summary listings. This includes the project title, principal investigators, research organization, project number, contract number, supporting organization, funding level if known, related energy sources with numbers indicating percentages of effort devoted to each, and R and D categories. A brief description of each project is given, and this is followed by subject index terms that were assigned for computer searching and for generating the printed subject index in Volume IV

Fabrication of sub-micrometric metallic hollow-core structures by laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Perez, Noemi; Tavera, Txaber [CEIT and Tecnun (University of Navarra) Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Rodriguez, Ainara [CIC Microgune, Paseo Mikeletegi 48, 20009 San Sebastian (Spain); Ellman, Miguel; Ayerdi, Isabel; Olaizola, Santiago M. [CEIT and Tecnun (University of Navarra) Manuel de Lardizabal 15, 20018 San Sebastian (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Arrays of hollow-core sub-micrometric structures are fabricated. Black-Right-Pointing-Pointer Laser interference lithography is used for the pattering of the resist sacrificial layer. Black-Right-Pointing-Pointer The removal of the sacrificial layer gives rise to metallic channels with a maximum crosssectional area of 0.1 {mu}m{sup 2}. Black-Right-Pointing-Pointer These structures can be used in nanofluidics. - Abstract: This work presents the fabrication of hollow-core metallic structures with a complete laser interference lithography (LIL) process. A negative photoresist is used as sacrificial layer. It is exposed to the pattern resulting from the interference of two laser beams, which produces a structure of photoresist lines with a period of 600 nm. After development of the resist, platinum is deposited on the samples by DC sputtering and the resist is removed with acetone. The resulting metallic structures consist in a continuous platinum film that replicates the photoresist relief with a hollow core. The cross section of the channels is up to 0.1 {mu}m{sup 2}. The fabricated samples are characterized by FESEM and FIB. This last tool helps to provide a clear picture of the shape and size of the channels. Conveniently dimensioned, this array of metallic submicrometric channels can be used in microfluidic or IC cooling applications.

Affective Architecture. Film as a Sensory Transference Tool and an Intimacy Projection Environment

DEFF Research Database (Denmark)

Petersen, Rikke Munck; Farsø, Mads

2016-01-01

, with our bodies, perceive space and project space. Through an analysis of two films, it points to the medium of film as both a tool and an environment, based on Gernot Böhme’s ‘Raum leiblicher Anwesenheit (Böhme 2006). These films illustrate how the film’s picture frame becomes almost like a skin......This paper elucidates how film may offer itself as a tool for both the representation and conception of space that can strengthen an alternative, phenomenological and transcendental position in architecture. The paper underscores that the film camera can work as a kind of amplifier of how we...... and through its surface and sound projects both a site and a near-sensual experience simultaneously. The medium of film as both tool and an environment thereby supports an extended sensory-intimate reflection on outer experiences and inner sensations that – in its audio-visual and time...

Free-electron laser emission architecture impact on extreme ultraviolet lithography

Science.gov (United States)

Hosler, Erik R.; Wood, Obert R.; Barletta, William A.

2017-10-01

Laser-produced plasma (LPP) EUV sources have demonstrated ˜125 W at customer sites, establishing confidence in EUV lithography (EUVL) as a viable manufacturing technology. However, for extension to the 3-nm technology node and beyond, existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half-field exposures) and/or EUV multipatterning (requiring increased wafer throughput proportional to the number of exposure passes). Both development paths will require a substantial increase in EUV source power to maintain the economic viability of the technology, creating an opportunity for free-electron laser (FEL) EUV sources. FEL-based EUV sources offer an economic, high-power/single-source alternative to LPP EUV sources. Should FELs become the preferred next-generation EUV source, the choice of FEL emission architecture will greatly affect its operational stability and overall capability. A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) self-amplified spontaneous emission, (2) regenerative amplifier, or (3) self-seeding. Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provides a framework for future FEL design and enablement for EUVL applications.

Thermo-curable epoxy systems for nanoimprint lithography

International Nuclear Information System (INIS)

Wu, Chun-Chang; Hsu, Steve Lien-Chung

2010-01-01

In this work, we have used solvent-free thermo-curable epoxy systems for low-pressure and moderate-temperature nanoimprint lithography (NIL). The curing kinetic parameters and conversion of diglycidyl ether of bisphenol A (DGEBA) resin with different ambient-cure 930 and 954 hardeners were studied by the isothermal DSC technique. They are useful for the study of epoxy resins in the imprinting application. The DGEBA/930 and DGEBA/954 epoxy resists can be imprinted to obtain high-density nano- and micro-scale patterns on a flexible indium tin oxide/poly(ethylene terephthalate) (ITO/PET) substrate. The DGEBA/930 epoxy resin is not only suitable for resist material, but also for plastic mold material. Highly dense nanometer patterns can be successfully imprinted using a UV-curable resist from the DGEBA/930 epoxy mold. Using the replicated DGEBA/930 epoxy mold instead of the expensive master can prevent brittle failure of the silicon molds in the NIL

Inclined nanoimprinting lithography for 3D nanopatterning

International Nuclear Information System (INIS)

Liu Zhan; Bucknall, David G; Allen, Mark G

2011-01-01

We report a non-conventional shear-force-driven nanofabrication approach, inclined nanoimprint lithography (INIL), for producing 3D nanostructures of varying heights on planar substrates in a single imprinting step. Such 3D nanostructures are fabricated by exploiting polymer anisotropic dewetting where the degree of anisotropy can be controlled by the magnitude of the inclination angle. The feature size is reduced from micron scale of the template to a resultant nanoscale pattern. The underlying INIL mechanism is investigated both experimentally and theoretically. The results indicate that the shear force generated at a non-zero inclination angle induced by the INIL apparatus essentially leads to asymmetry in the polymer flow direction ultimately resulting in 3D nanopatterns with different heights. INIL removes the requirements in conventional nanolithography of either utilizing 3D templates or using multiple lithographic steps. This technique enables various 3D nanoscale devices including angle-resolved photonic and plasmonic crystals to be fabricated.

STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY

Directory of Open Access Journals (Sweden)

Mária Domonkos

2014-10-01

Full Text Available In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The structuring of the diamond films is performed using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition, mask preparation (by the standard Langmuir-Blodgett method, mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma  using different plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of processed diamond films is characterized by scanning electron microscopy and atomic force microscope. The potential applications of such diamond structures in various fields of nanotechnology are also briefly discussed.

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

International Nuclear Information System (INIS)

Huang, H.W.; Lin, C.H.; Huang, J.K.; Lee, K.Y.; Lin, C.F.; Yu, C.C.; Tsai, J.Y.; Hsueh, R.; Kuo, H.C.; Wang, S.C.

2009-01-01

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

TiO2/ CNT hetero-structure with variable electron beam diameter suitable for nano lithography

International Nuclear Information System (INIS)

Barati, F.; Abdi, Y.; Arzi, E.

2012-01-01

We report fabrication of a novel TiO 2 /carbon nano tube based field emission device suitable for nano lithography and fabrication of transistor. The growth of carbon nano tubes is performed on silicon substrates using plasma-enhanced chemical vapor deposition method. The vertically grown carbon nano tubes are encapsulated by TiO 2 using an atmospheric pressure chemical vapor deposition system. Field emission from the carbon nano tubes is realized by mechanical polishing of the prepared nano structure. The possibility of the application of such nano structures as a lithography tool with variable electron beam diameter was investigated. The obtained results show that spot size of less than 30 nm can be obtained by applying a proper voltage on TiO 2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of this nano structure for the fabrication of field emission based field effect transistor. By applying a voltage between the gate and the cathode electrode, the emission current from carbon nano tubes shows a significant drop, indicating proper control of gate on the emission current.

Fundamental study of droplet spray characteristics in photomask cleaning for advanced lithography

Science.gov (United States)

Lu, C. L.; Yu, C. H.; Liu, W. H.; Hsu, Luke; Chin, Angus; Lee, S. C.; Yen, Anthony; Lee, Gaston; Dress, Peter; Singh, Sherjang; Dietze, Uwe

2010-09-01

The fundamentals of droplet-based cleaning of photomasks are investigated and performance regimes that enable the use of binary spray technologies in advanced mask cleaning are identified. Using phase Doppler anemometry techniques, the effect of key performance parameters such as liquid and gas flow rates and temperature, nozzle design, and surface distance on droplet size, velocity, and distributions were studied. The data are correlated to particle removal efficiency (PRE) and feature damage results obtained on advanced photomasks for 193-nm immersion lithography.

Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Zhan, Teng

2015-01-01

Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By ...

Eye Gaze Controlled Projected Display in Automotive and Military Aviation Environments

Directory of Open Access Journals (Sweden)

Gowdham Prabhakar

2018-01-01

Full Text Available This paper presents an eye gaze controlled projected display that can be used in aviation and automotive environment as a head up display. We have presented details of the hardware and software used in developing the display and an algorithm to improve performance of point and selection tasks in eye gaze controlled graphical user interface. The algorithm does not require changing layout of an interface; it rather puts a set of hotspots on clickable targets using a Simulated Annealing algorithm. Four user studies involving driving and flight simulators have found that the proposed projected display can improve driving and flying performance and significantly reduce pointing and selection times for secondary mission control tasks compared to existing interaction systems.

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

Plasmonic Nanostructures Prepared by Soft UV Nanoimprint Lithography and Their Application in Biological Sensing

Directory of Open Access Journals (Sweden)

Grégory Barbillon

2012-01-01

Full Text Available We prepared high-density plasmonic nanostructures on a glass substrate. By using soft UV nanoimprint lithography, gold nanodisks with a diameter of 65 nm were obtained on an area of 1 mm2. We tested these gold nanosensors in the biotin/streptavidin system to study their selectivity and sensitivity of detection. The prepared gold nanodisks could detect streptavidin at 10 pM.

Thermal deformation prediction in reticles for extreme ultraviolet lithography based on a measurement-dependent low-order model

NARCIS (Netherlands)

Bikcora, C.; Weiland, S.; Coene, W.M.J.

2014-01-01

In extreme ultraviolet lithography, imaging errors due to thermal deformation of reticles are becoming progressively intolerable as the source power increases. Despite this trend, such errors can be mitigated by adjusting the wafer and reticle stages based on a set of predicted deformation-induced

High performance Si immersion gratings patterned with electron beam lithography

Science.gov (United States)

Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

2014-07-01

Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

Efficient Excitation of Channel Plasmons in Tailored, UV-Lithography-Defined V-Grooves

DEFF Research Database (Denmark)

Smith, Cameron L. C.; Thilsted, Anil Haraksingh; Garcia-Ortiz, Cesar E.

2014-01-01

We demonstrate the highly efficient (>50%) conversion of freely propagating light to channel plasmon-polaritons (CPPs) in gold V-groove waveguides using compact 1.6 μm long waveguide-termination coupling mirrors. Our straightforward fabrication process, involving UV-lithography and crystallographic...... silicon etching, forms the coupling mirrors innately and ensures exceptional-quality, wafer-scale device production. We tailor the V-shaped profiles by thermal silicon oxidation in order to shift initially wedge-located modes downward into the V-grooves, resulting in well-confined CPPs suitable...

An Adaptive Approach to Managing Knowledge Development in a Project-Based Learning Environment

Science.gov (United States)

Tilchin, Oleg; Kittany, Mohamed

2016-01-01

In this paper we propose an adaptive approach to managing the development of students' knowledge in the comprehensive project-based learning (PBL) environment. Subject study is realized by two-stage PBL. It shapes adaptive knowledge management (KM) process and promotes the correct balance between personalized and collaborative learning. The…

Organising Sustainable Transition: Understanding the Product, Project and Service Domain of the Built Environment

DEFF Research Database (Denmark)

Thuesen, Christian; Koch-Ørvad, Nina; Maslesa, Esmir

2016-01-01

of three generic domains - the Project, Product and Service domain - with widely different markets, companies, business models and regulation. Besides identifying the characteristics of the different domains, the findings show that these domains are interdependent, but largely live their own lives......Sustainable transition of the built environment con struction industry is challenging the existing construction practices and business models. This article presents a framework for understanding and facilitating sustainable transition in the built environment. The framework was developed through...

Multimode Resource-Constrained Multiple Project Scheduling Problem under Fuzzy Random Environment and Its Application to a Large Scale Hydropower Construction Project

Science.gov (United States)

Xu, Jiuping

2014-01-01

This paper presents an extension of the multimode resource-constrained project scheduling problem for a large scale construction project where multiple parallel projects and a fuzzy random environment are considered. By taking into account the most typical goals in project management, a cost/weighted makespan/quality trade-off optimization model is constructed. To deal with the uncertainties, a hybrid crisp approach is used to transform the fuzzy random parameters into fuzzy variables that are subsequently defuzzified using an expected value operator with an optimistic-pessimistic index. Then a combinatorial-priority-based hybrid particle swarm optimization algorithm is developed to solve the proposed model, where the combinatorial particle swarm optimization and priority-based particle swarm optimization are designed to assign modes to activities and to schedule activities, respectively. Finally, the results and analysis of a practical example at a large scale hydropower construction project are presented to demonstrate the practicality and efficiency of the proposed model and optimization method. PMID:24550708

Multimode resource-constrained multiple project scheduling problem under fuzzy random environment and its application to a large scale hydropower construction project.

Science.gov (United States)

Xu, Jiuping; Feng, Cuiying

2014-01-01

This paper presents an extension of the multimode resource-constrained project scheduling problem for a large scale construction project where multiple parallel projects and a fuzzy random environment are considered. By taking into account the most typical goals in project management, a cost/weighted makespan/quality trade-off optimization model is constructed. To deal with the uncertainties, a hybrid crisp approach is used to transform the fuzzy random parameters into fuzzy variables that are subsequently defuzzified using an expected value operator with an optimistic-pessimistic index. Then a combinatorial-priority-based hybrid particle swarm optimization algorithm is developed to solve the proposed model, where the combinatorial particle swarm optimization and priority-based particle swarm optimization are designed to assign modes to activities and to schedule activities, respectively. Finally, the results and analysis of a practical example at a large scale hydropower construction project are presented to demonstrate the practicality and efficiency of the proposed model and optimization method.

Integration of organic based Schottly junctions into crossbar arrays by standard UV lithography

DEFF Research Database (Denmark)

Katsia, E.; Tallarida, G.; Kutrzeba-Kotowska, B.

2008-01-01

organic based Schottky diodes in a crossbar architecture, by standard UV lithography. The proposed integration route features a limited number of process steps and prevents the exposure of the active materials to UV. This approach was developed using poly(3-hexylthiophene) as a model compound...... and was successfully applied to different organic semiconductors. The electrical characteristics of the as prepared junctions reveal the successful patterning and demonstrate the compatibility of the process sequence steps with the organic materials....

An estimation method of the direct benefit of a waterlogging control project applicable to the changing environment

Science.gov (United States)

Zengmei, L.; Guanghua, Q.; Zishen, C.

2015-05-01

The direct benefit of a waterlogging control project is reflected by the reduction or avoidance of waterlogging loss. Before and after the construction of a waterlogging control project, the disaster-inducing environment in the waterlogging-prone zone is generally different. In addition, the category, quantity and spatial distribution of the disaster-bearing bodies are also changed more or less. Therefore, under the changing environment, the direct benefit of a waterlogging control project should be the reduction of waterlogging losses compared to conditions with no control project. Moreover, the waterlogging losses with or without the project should be the mathematical expectations of the waterlogging losses when rainstorms of all frequencies meet various water levels in the drainage-accepting zone. So an estimation model of the direct benefit of waterlogging control is proposed. Firstly, on the basis of a Copula function, the joint distribution of the rainstorms and the water levels are established, so as to obtain their joint probability density function. Secondly, according to the two-dimensional joint probability density distribution, the dimensional domain of integration is determined, which is then divided into small domains so as to calculate the probability for each of the small domains and the difference between the average waterlogging loss with and without a waterlogging control project, called the regional benefit of waterlogging control project, under the condition that rainstorms in the waterlogging-prone zone meet the water level in the drainage-accepting zone. Finally, it calculates the weighted mean of the project benefit of all small domains, with probability as the weight, and gets the benefit of the waterlogging control project. Taking the estimation of benefit of a waterlogging control project in Yangshan County, Guangdong Province, as an example, the paper briefly explains the procedures in waterlogging control project benefit estimation. The

Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography

Directory of Open Access Journals (Sweden)

Harutaka Mekaru

2015-02-01

Full Text Available In combination with tapered-trench-etching of Si and SU-8 photoresist, a grayscale mask for deep X-ray lithography was fabricated and passed a 10-times-exposure test. The performance of the X-ray grayscale mask was evaluated using the TERAS synchrotron radiation facility at the National Institute of Advanced Industrial Science and Technology (AIST. Although the SU-8 before photo-curing has been evaluated as a negative-tone photoresist for ultraviolet (UV and X-ray lithographies, the characteristic of the SU-8 after photo-curing has not been investigated. A polymethyl methacrylate (PMMA sheet was irradiated by a synchrotron radiation through an X-ray mask, and relationships between the dose energy and exposure depth, and between the dose energy and dimensional transition, were investigated. Using such a technique, the shape of a 26-μm-high Si absorber was transformed into the shape of a PMMA microneedle with a height of 76 μm, and done with a high contrast. Although during the fabrication process of the X-ray mask a 100-μm-pattern-pitch (by design was enlarged to 120 μm. However, with an increase in an integrated dose energy this number decreased to 99 μm. These results show that the X-ray grayscale mask has many practical applications. In this paper, the author reports on the evaluation results of SU-8 when used as a membrane material for an X-ray mask.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

Science.gov (United States)

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Supercritical CO2 drying of poly(methyl methacrylate) photoresist for deep x-ray lithography: a brief note

Science.gov (United States)

Shukla, Rahul; Abhinandan, Lala; Sharma, Shivdutt

2017-07-01

Poly(methyl methacrylate) (PMMA) is an extensively used positive photoresist for deep x-ray lithography. The post-development release of the microstructures of PMMA becomes very critical for high aspect ratio fragile and freestanding microstructures. Release of high aspect ratio comb-drive microstructure of PMMA made by one-step x-ray lithography (OXL) is studied. The effect of low-surface tension Isopropyl alcohol (IPA) over water is investigated for release of the high aspect ratio microstructures using conventional and supercritical (SC) CO2 drying. The results of conventional drying are also compared for the samples released or dried in both in-house developed and commercial SC CO2 dryer. It is found that in all cases the microstructures of PMMA are permanently deformed and damaged while using SC CO2 for drying. For free-standing high aspect ratio microstructures of PMMA made by OXL, it is advised to use low-surface tension IPA over DI water. However, this brings a limitation on the design of the microstructure.

Prospects of DUV OoB suppression techniques in EUV lithography

Science.gov (United States)

Park, Chang-Min; Kim, Insung; Kim, Sang-Hyun; Kim, Dong-Wan; Hwang, Myung-Soo; Kang, Soon-Nam; Park, Cheolhong; Kim, Hyun-Woo; Yeo, Jeong-Ho; Kim, Seong-Sue

2014-04-01

Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor's requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are identified as risks for CDU and Overlay: Infrared (IR) and deep ultraviolet (DUV) out of band (OOB) radiations from laser produced plasma (LPP) EUV source. IR from plasma generating CO2 laser that causes optics heating and wafer overlay error is well suppressed by introducing grating on collector to diffract IR off the optical axis and is the effect has been confirmed by operation of pre-production tool (NXE3100). EUV and DUV OOB which are reflected from mask black boarder (BB) are root causes of EUV-specific CD error at the boundaries of exposed shots which would result in the problem of CDU out of spec unless sufficiently suppressed. Therefore, control of DUV OOB reflection from the mask BB is one of the key technologies that must be developed prior to EUV mass production. In this paper, quantitative assessment on the advantage and the disadvantage of potential OOB solutions will be discussed. EUV and DUV OOB impacts on wafer CDs are measured from NXE3100 & NXE3300 experiments. Significant increase of DUV OOB impact on CD from NXE3300 compared with NXE3100 is observed. There are three ways of technology being developed to suppress DUV OOB: spectral purity filter (SPF) as a scanner solution, multi-layer etching as a solution on mask, and resist top-coating as a process solution. PROs and CONs of on-scanner, on-mask, and on-resist solution for the mass production of EUV lithography will be discussed.

Evaluation of EUV resist performance using interference lithography

Science.gov (United States)

Buitrago, E.; Yildirim, O.; Verspaget, C.; Tsugama, N.; Hoefnagels, R.; Rispens, G.; Ekinci, Y.

2015-03-01

Extreme ultraviolet lithography (EUVL) stands as the most promising solution for the fabrication of future technology nodes in the semiconductor industry. Nonetheless, the successful introduction of EUVL into the extremely competitive and stringent high-volume manufacturing (HVM) phase remains uncertain partly because of the still limiting performance of EUV resists below 16 nm half-pitch (HP) resolution. Particularly, there exists a trade-off relationship between resolution (half-pitch), sensitivity (dose) and line-edge roughness (LER) that can be achieved with existing materials. This trade-off ultimately hampers their performance and extendibility towards future technology nodes. Here we present a comparative study of highly promising chemically amplified resists (CARs) that have been evaluated using the EUV interference lithography (EUV-IL) tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). In this study we have focused on the performance qualification of different resists mainly for 18 nm and 16 nm half-pitch line/space resolution (L/S = 1:1). Among the most promising candidates tested, there are a few choices that allow for 16 nm HP resolution to be achieved with high exposure latitude (up to ~ 33%), low LER (down to 3.3 nm or ~ 20% of critical dimension CD) and low dose-to-size (or best-energy, BE) < 41 mJ/cm2 values. Patterning was even demonstrated down to 12 nm HP with one of CARs (R1UL1) evaluated for their extendibility beyond the 16 nm HP resolution. 11 nm HP patterning with some pattern collapse and well resolved patterns down 12 nm were also demonstrated with another CAR (R15UL1) formulated for 16 nm HP resolution and below. With such resist it was possible even to obtain a small process window for 14 nm HP processing with an EL ~ 8% (BE ~ 37 mJ/cm2, LER ~ 4.5 nm). Though encouraging, fulfilling all of the requirements necessary for high volume production, such as high resolution, low LER, high photon

High throughput nanoimprint lithography for semiconductor memory applications

Science.gov (United States)

Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

2017-03-01

Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

Science.gov (United States)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

A compact system for large-area thermal nanoimprint lithography using smart stamps

DEFF Research Database (Denmark)

Pedersen, Rasmus Haugstrup; Hansen, Ole; Kristensen, Anders

2008-01-01

We present a simple apparatus for thermal nanoimprint lithography. In this work, the stamp is designed to significantly reduce the requirements for pressure application on the external imprint system. By MEMS-based processing, an air cavity inside the stamp is created, and the required pressure...... for successful imprint is reduced. Additionally, the stamp is capable of performing controlled demolding after imprint. Due to the complexity of the stamp, a compact and cost-effective imprint apparatus can be constructed. The design and fabrication of the advanced stamp as well as the simple imprint equipment...

Vitreous carbon mask substrate for X-ray lithography

Science.gov (United States)

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Branched poly(ethyleneimine): a versatile scaffold for patterning polymer brushes by means of remote photocatalytic lithography

Science.gov (United States)

Panzarasa, Guido; Dübner, Matthias; Soliveri, Guido; Edler, Matthias; Griesser, Thomas

2017-09-01

Patterning of functional surfaces is one of the cornerstones of nanotechnology as it allows the fabrication of sensors and lab-on-a-chip devices. Here, the patterning of self-assembled monolayers of branched poly(ethyleneimine) (bPEI) on silica was achieved by means of remote photocatalytic lithography. Moreover, when 2-bromoisobutyryl-modified bPEI was used, the resulting pattern could be amplified by grafting polymer brushes by means of surface-initiated atom transfer radical polymerization. In contrast to previous reports for the patterning of bPEI, the present approach can be conducted in minutes instead of hours, reducing the exposure time to UV radiation and enhancing the overall efficiency. Furthermore, our approach is much more user-friendly, allowing a facile fabrication of patterned initiator-modified surfaces and the use of inexpensive instrumentation such as a low-power UV source and a simple photomask. Considering the versatility of bPEI as a scaffold for the development of biosensors, patterning by means of remote photocatalytic lithography will open new opportunities in a broad field of applications.

Qualification, monitoring, and integration into a production environment of the world's first fully programmable illuminator

Science.gov (United States)

McIntyre, Gregory; Corliss, Daniel; Groenendijk, Remco; Carpaij, Rene; van Niftrik, Ton; Landie, Guillaume; Tamura, Takao; Pepin, Thomas; Waddell, James; Woods, Jerry; Robinson, Chris; Tian, Kehan; Johnson, Richard; Halle, Scott; Kim, Ryoung-Han; Mclellan, Erin; Kato, Hirokazu; Scaduto, Anthony; Maier, Carl; Colburn, Matt

2011-04-01

This paper will describe the development, qualification, monitoring, and integration into a production environment of the world's first fully programmable illuminator for optical lithography. FlexRay TM, a programmable illuminator based on a MEMs multi-mirror array that was developed for TWINSCAN XT:19x0i and TWINSCAN NXT series ASML immersion scanners, was first installed in January 2010 at Albany Nanotech, with subsequent tools installed in IBM's East Fishkill Manufacturing facility. After a brief overview of the concept and benefits of FlexRay, this paper will provide a comprehensive assessment of its reliability and imaging performance. A CD-based pupil qualification (CDPQ) procedure will be introduced and shown to be an efficient and effective way to monitor pupil performance. Various CDPQ and in-resist measurement results will be described, offering convincing evidence that FlexRay reliably generates high-quality pupils and is well suited for high volume manufacturing at lithography's leading edge.

Method for the protection of extreme ultraviolet lithography optics

Science.gov (United States)

Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

2010-06-22

A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

High speed hydraulic scanner for deep x-ray lithography

International Nuclear Information System (INIS)

Milne, J.C.; Johnson, E.D.

1997-07-01

From their research and development in hard x-ray lithography, the authors have found that the conventional leadscrew driven scanner stages do not provide adequate scan speed or travel. These considerations have led the authors to develop a scanning system based on a long stroke hydraulic drive with 635 mm of travel and closed loop feedback to position the stage to better than 100 micrometers. The control of the device is through a PC with a custom LabView interface coupled to simple x-ray beam diagnostics. This configuration allows one to set a variety of scan parameters, including target dose, scan range, scan rates, and dose rate. Results from the prototype system at beamline X-27B are described as well as progress on a production version for the X-14B beamline

High speed hydraulic scanner for deep x-ray lithography

Energy Technology Data Exchange (ETDEWEB)

Milne, J.C.; Johnson, E.D.

1997-07-01

From their research and development in hard x-ray lithography, the authors have found that the conventional leadscrew driven scanner stages do not provide adequate scan speed or travel. These considerations have led the authors to develop a scanning system based on a long stroke hydraulic drive with 635 mm of travel and closed loop feedback to position the stage to better than 100 micrometers. The control of the device is through a PC with a custom LabView interface coupled to simple x-ray beam diagnostics. This configuration allows one to set a variety of scan parameters, including target dose, scan range, scan rates, and dose rate. Results from the prototype system at beamline X-27B are described as well as progress on a production version for the X-14B beamline.

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

Science.gov (United States)

Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

2016-03-01

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

Installation and initial operation of the Suss Advanced Lithography Model 4 X-ray Stepper

International Nuclear Information System (INIS)

Wells, G.M.; Wallace, J.P.; Brodsky, E.L.; Leonard, Q.J.; Reilly, M.T.; Anderson, P.D.; Lee, W.K.; Cerrina, F.; Simon, K.

1996-01-01

A Suss Advanced Lithography X-ray Stepper designed as a production tool for high throughput in the sub-quarter-micron device range has been installed and is being commissioned at the University of Wisconsin close-quote s Center for X-ray Lithography (CXrL). Illumination for the stepper is provided by a scanning beamline designed and constructed at CXrL. The beamline optical components are a gold-coated plane mirror, a 1-micron-thick silicon carbide window, and a 25-micron-thick beryllium exit window. Beamline features include synchronized scanning of the mirror and exit window, variable scan velocity to compensate for reflectivity changes as a function of incident angle, and a horizontal oscillation of the beryllium window during vertical scanning to average the effects of nonuniform beryllium window transmission. A helium purged snout transports the x-rays from the beamline exit window, to the exposure plane in the stepper. This snout is retractable to allow for the loading and unloading of masks into the stepper. The motions of the mirror, exit window, and snout are computer controlled by a LABVIEW program that communicates with the stepper control software. The design of the beamline and initial operating experiences with the beamline and stepper will be discussed. copyright 1996 American Institute of Physics

Weak interfaces for UV cure nanoimprint lithography

Science.gov (United States)

Houle, Frances; Fornof, Ann; Simonyi, Eva; Miller, Dolores; Truong, Hoa

2008-03-01

Nanoimprint lithography using a photocurable organic resist provides a means of patterning substrates with a spatial resolution in the few nm range. The usefulness of the technique is limited by defect generation during template removal, which involves fracture at the interface between the template and the newly cured polymer. Although it is critical to have the lowest possible interfacial fracture toughness (Gc less than 0.1 Jm-2) to avoid cohesive failure in the polymer, there is little understanding on how to achieve this using reacting low viscosity resist fluids. Studies of debonding of a series of free-radical cured polyhedral silsesquioxane crosslinker formulations containing selected reactive diluents from fluorosilane-coated quartz template materials will be described. At constant diluent fraction the storage modulus of cured resists follows trends in initial reaction rate, not diluent Tg. Adhesion is uncorrelated with both Tg and storage modulus. XPS studies of near-interface compositions indicate that component segregation within the resist fluid on contact with the template, prior to cure, plays a significant role in controlling the fracture process.

The fabrication of a carbon nanotube array using a catalyst-poisoning layer in the inverse nano-sphere lithography method

International Nuclear Information System (INIS)

Tsai, Tsung-Yen; Chen, Tsung-Han; Tai, Nyan-Hwa; Chang, Shih-Chin; Hsu, Hui-Chen; Joseph Palathinkal, Thomas

2009-01-01

A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.

The fabrication of a carbon nanotube array using a catalyst-poisoning layer in the inverse nano-sphere lithography method

Energy Technology Data Exchange (ETDEWEB)

Tsai, Tsung-Yen; Chen, Tsung-Han; Tai, Nyan-Hwa; Chang, Shih-Chin; Hsu, Hui-Chen; Joseph Palathinkal, Thomas, E-mail: nhtai@mx.nthu.edu.t [Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan (China)

2009-07-29

A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.

Reactive Imprint Lithography: Combined Topographical Patterning and Chemical Surface Functionalization of Polystyrene-block-poly(tert-butyl acrylate) Films

NARCIS (Netherlands)

Duvigneau, Joost; Cornelissen, Stijn; Bardajı´Valls, Nuria; Schönherr, Holger; Vancso, Gyula J.

2009-01-01

Here, reactive imprint lithography (RIL) is introduced as a new, one-step lithographic tool for the fabrication of large-area topographically patterned, chemically activated polymer platforms. Films of polystyrene-block-poly(tert-butyl acrylate) (PS-b-PtBA) are imprinted with PDMS master stamps at

Hierarchical biodiversity and environment impact assessment of South-to-North Water Diversion Project of China

OpenAIRE

Youhua Chen

2013-01-01

In this brief review, the potential environmental and biodiversity impact of South-to-North Water Diversion (SNWD) project in China on regional environments was assessed. I used the hierarchical environmental impact assessment to classify the possible impacts into three orders caused by the construction of SNWD and then presented the current research advances on each order of the impacts. Further impact assessments should be reinforced during the construction period of SNDW project for the su...

Patterned self-assembled monolayers for nanoscale lithography and the control of catalytically produced electroosmosis

Science.gov (United States)

Subramanian, Shyamala

This thesis explores two applications of self-assembled monolayers (SAMs) (a) for developing novel molecular assembly based nanolithography techniques and (b) for tailoring zeta-potential of surfaces towards achieving directional control of catalytically induced fluid flow. The first half of the thesis develops the process of molecular ruler lithography using sacrificial host structures. This is a novel hybrid nanolithography technique which combines chemical self-assembly with conventional fabrication methods for improving the resolution of existing lithography tools to sub-50 nm. Previous work related to molecular ruler lithography have shown the use of thiol-SAMs, placed one on top of the other like a molecular resist, for scaling down feature sizes. In this thesis various engineering solutions for improving the reproducibility, yield, nanoscale roughness and overall manufacturability of the process are introduced. This is achieved by introducing a sacrificial inert layer underneath the gold parent structure. This bilayer sacrificial host allows for preferential, easy and quick removal of the parent structures, isolates the parent metal from the underlying substrate and improves reproducibility of the lift-off process. Also it opens avenues for fabrication of high aspect ratio features. Also molecular layer vapor deposition method is developed for building the multilayer molecular resist via vapor phase to reduce contaminations and yield issues associated with solution phase deposition. The smallest isolated metal features produced using this process were 40 nm in width. The second half of the thesis describes application of thiol-SAMs to tailor surface properties of gold, specifically the surface charge or zeta potential. Previous work has demonstrated that the direction of movement of fluid in the vicinity of a catalytically active bimetallic junction placed in a solution of dilute hydrogen peroxide depends on the charge of the gold surface. SAMs with

Students' Perceptions of a Project-Based Organic Chemistry Laboratory Environment: A Phenomenographic Approach

Science.gov (United States)

Burrows, Nikita L.; Nowak, Montana K.; Mooring, Suazette R.

2017-01-01

Students can perceive the laboratory environment in a variety of ways that can affect what they take away from the laboratory course. This qualitative study characterizes undergraduate students' perspectives of a project-based Organic Chemistry laboratory using the theoretical framework of phenomenography. Eighteen participants were interviewed in…

VREPAR projects: the use of virtual environments in psycho-neuro-physiological assessment and rehabilitation.

Science.gov (United States)

Riva, G; Bacchetta, M; Baruffi, M; Borgomainerio, E; Defrance, C; Gatti, F; Galimberti, C; Fontaneto, S; Marchi, S; Molinari, E; Nugues, P; Rinaldi, S; Rovetta, A; Ferretti, G S; Tonci, A; Wann, J; Vincelli, F

1999-01-01

Due, in large part, to the significant advances in PC hardware that have been made over the last 3 years, PC-based virtual environments are approaching reality. Virtual Reality Environments for Psychoneurophysiological Assessment and Rehabilitation (VREPAR) are two European Community funded projects (Telematics for health-HC 1053/HC 1055, http:// www.psicologia.net) that are trying to develop a PC-based virtual reality system (PC-VRS) for the medical market that can be marketed at a price that is accessible to its possible endusers (hospitals, universities, and research centres) and that would have the modular, connectability, and interoperability characteristics that the existing systems lack. In particular, the projects are developing three hardware/software modules for the application of the PCVRS in psycho-neuro-physiological assessment and rehabilitation. The chosen development areas are eating disorders (bulimia, anorexia, and obesity), movement disorders (Parkinson's disease and torsion dystonia) and stroke disorders (unilateral neglect and hemiparesis). This article describes the rationale of the modules and the preliminary results obtained.

Fabrication of large area homogeneous metallic nanostructures for optical sensing using colloidal lithography

DEFF Research Database (Denmark)

Eriksen, René Lynge; Pors, Anders; Dreier, Jes

2010-01-01

We propose a simple and reproducible method for fabricating large area metal films with inter-connected nanostructures using a combination of colloidal lithography, metal deposition and a template stripping technique. The method is generic in the sense that it is possible to produce a variety...... to fabricate metal films with inter-connected nanostructures consisting of either partial spherical shells or the inverted structures: spherical cavities. The substrates are characterized by optical reflectance and transmittance spectroscopy. We demonstrate, in the case of partial spherical shells...

Contributions of Pakistan in the IAEA/RCA/UNDP regional project on management of marine coastal environment and its pollution

International Nuclear Information System (INIS)

Qureshi, R.M.; Mashiatullah, A.; Fazil, M.; Ahmad, E.; Tasneem, M.A.; Khan, H.A.; Sajjad, M.I.

2002-01-01

The International Atomic Energy Agency (IAEA), Vienna, launched a five years (duration: 1998 - 2002) Joint Project on 'Better Management of the Environment and Industrial Growth Through Isotope and Radiation Technology (RAS/97/030)' in co-operation with the RCA (Regional Co-operative Agreement) office, Vienna, and United Nations Development Programme (UNDP). The Marine Sub-project entitled 'Management of Marine Coastal Environment and its Pollution (RAS/8/083)' is 'Output 1.2' of this joint project. Pakistan is very actively participating in activities of the IAEA/RCA/UNDP Marine Sub-Project that were planned in two Project Formulation Meetings (PFMs) held at Manila, Philippines, during 1998. In Pakistan, various activities of the national marine pollution project are being administered by the nuclear institute namely, Pakistan Institute of Nuclear Science and Technology (PINSTECH), in collaboration with national end user institutions. To-date, Pakistan has significantly contributed in this project, both at national level and at RCA regional level. This paper highlights the progress and some accomplishments of Pakistan, up to the year 2001, for marine pollution studies related to the IAEA/RCA regional marine sub project. (author)

Interplay between Individual Creativity and Group Creativity in Problem and Project-Based Learning (PBL) Environment in Engineering Education

DEFF Research Database (Denmark)

Zhou, Chunfang; Kolmos, Anette

2013-01-01

Recent studies regard Problem and Project Based Learning (PBL) as providing a learning environment which fosters both individual and group creativity. This paper focuses on the question: In a PBL environment, how do students perceive the interplay between individual and group creativity? Empirica...

Joint optimization of source, mask, and pupil in optical lithography

Science.gov (United States)

Li, Jia; Lam, Edmund Y.

2014-03-01

Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

Uniformity across 200 mm silicon wafers printed by nanoimprint lithography

International Nuclear Information System (INIS)

Gourgon, C; Perret, C; Tallal, J; Lazzarino, F; Landis, S; Joubert, O; Pelzer, R

2005-01-01

Uniformity of the printing process is one of the key parameters of nanoimprint lithography. This technique has to be extended to large size wafers to be useful for several industrial applications, and the uniformity of micro and nanostructures has to be guaranteed on large surfaces. This paper presents results of printing on 200 mm diameter wafers. The residual thickness uniformity after printing is demonstrated at the wafer scale in large patterns (100 μm), in smaller lines of 250 nm and in sub-100 nm features. We show that a mould deformation occurs during the printing process, and that this deformation is needed to guarantee printing uniformity. However, the mould deformation is also responsible for the potential degradation of the patterns

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

2017-01-01

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James

2017-01-02

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

A poly(dimethylsiloxane)-coated flexible mold for nanoimprint lithography

International Nuclear Information System (INIS)

Lee, Nae Yoon; Kim, Youn Sang

2007-01-01

In this paper, we introduce an anti-adhesion poly(dimethylsiloxane) (PDMS)-coated flexible mold and its applications for room-temperature imprint lithography. The flexible mold is fabricated using an ultraviolet-curable prepolymer on a flexible substrate, and its surface is passivated with a thin layer of PDMS to impart an anti-adhesion property. The highly flexible mold enables conformal contact with a substrate on which a low-viscosity polymer resist is spin-cast in a thin layer. Large-area imprinting is then realized at room temperature under significantly reduced pressure. The mold was durable even after repetitive imprinting of over 200 times. Also, we show a double imprinting on the substrate with a PDMS-coated replica polymeric mold having 500 nm line patterns. This enables the formation of matrix patterns with varying feature heights in less than 7 min

Window-assisted nanosphere lithography for vacuum micro-nano-electronics

International Nuclear Information System (INIS)

Li, Nannan; Pang, Shucai; Yan, Fei; Chen, Lei; Jin, Dazhi; Xiang, Wei; Zhang, De; Zeng, Baoqing

2015-01-01

Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided a new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics

Polystyrene negative resist for high-resolution electron beam lithography

Directory of Open Access Journals (Sweden)

Ma Siqi

2011-01-01

Full Text Available Abstract We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be achieved both at 20 and 5 keV beam energies using different developers. In addition to its ultra-high resolution capability, polystyrene is a simple and low-cost resist with easy process control and practically unlimited shelf life. It is also considerably more resistant to dry etching than PMMA. With a low sensitivity, it would find applications where negative resist is desired and throughput is not a major concern.

Project CHERISH (Children in Home Environments: Regulation To Improve Safety and Health). Final Report.

Science.gov (United States)

Grubb, Paul Dallas

In 1990, Project CHERISH (Children in Home Environments: Regulation to Increase Safety and Health) enabled the Texas Department of Human Services to implement and evaluate several innovative strategies to strengthen regulation of family day care homes. This report contains descriptions of those strategies, an evaluation of their efficacy, and…

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and

A Computer-Based, Interactive Videodisc Job Aid and Expert System for Electron Beam Lithography Integration and Diagnostic Procedures.

Science.gov (United States)

Stevenson, Kimberly

This master's thesis describes the development of an expert system and interactive videodisc computer-based instructional job aid used for assisting in the integration of electron beam lithography devices. Comparable to all comprehensive training, expert system and job aid development require a criterion-referenced systems approach treatment to…

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Science.gov (United States)

Brandt, Pieter; Belledent, Jérôme; Tranquillin, Céline; Figueiro, Thiago; Meunier, Stéfanie; Bayle, Sébastien; Fay, Aurélien; Milléquant, Matthieu; Icard, Beatrice; Wieland, Marco

2014-07-01

For proximity effect correction in 5 keV e-beam lithography, three elementary building blocks exist: dose modulation, geometry (size) modulation, and background dose addition. Combinations of these three methods are quantitatively compared in terms of throughput impact and process window (PW). In addition, overexposure in combination with negative bias results in PW enhancement at the cost of throughput. In proximity effect correction by over exposure (PEC-OE), the entire layout is set to fixed dose and geometry sizes are adjusted. In PEC-dose to size (DTS) both dose and geometry sizes are locally optimized. In PEC-background (BG), a background is added to correct the long-range part of the point spread function. In single e-beam tools (Gaussian or Shaped-beam), throughput heavily depends on the number of shots. In raster scan tools such as MAPPER Lithography's FLX 1200 (MATRIX platform) this is not the case and instead of pattern density, the maximum local dose on the wafer is limiting throughput. The smallest considered half-pitch is 28 nm, which may be considered the 14-nm node for Metal-1 and the 10-nm node for the Via-1 layer, achieved in a single exposure with e-beam lithography. For typical 28-nm-hp Metal-1 layouts, it was shown that dose latitudes (size of process window) of around 10% are realizable with available PEC methods. For 28-nm-hp Via-1 layouts this is even higher at 14% and up. When the layouts do not reach the highest densities (up to 10∶1 in this study), PEC-BG and PEC-OE provide the capability to trade throughput for dose latitude. At the highest densities, PEC-DTS is required for proximity correction, as this method adjusts both geometry edges and doses and will reduce the dose at the densest areas. For 28-nm-hp lines critical dimension (CD), hole&dot (CD) and line ends (edge placement error), the data path errors are typically 0.9, 1.0 and 0.7 nm (3σ) and below, respectively. There is not a clear data path performance difference between

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Science.gov (United States)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Electron beam and mechanical lithographies as enabling factors for organic-based device fabrication

International Nuclear Information System (INIS)

Visconti, P.; Pisignano, D.; Della Torre, A.; Persano, L.; Maruccio, G.; Biasco, A.; Cingolani, R.; Rinaldi, R.

2005-01-01

Organic-based photonics and molecular electronics are attracting an increasing interest in modern science. The realization of high-resolution master structures by electron beam lithography (EBL) and their transfer to different organic functional materials by mechanical lithographies allow to fully exploit the wide flexibility of molecular systems for opto- and nanoelectronic devices. Planar nanojunctions, consisting of two metallic electrodes separated by an insulating medium, permit to test the molecular conduction properties. Since the typical size of a biomolecule is of the order of a few nanometer, hybrid molecular electronic (HME) devices need metallic electrodes separated by a nanometer-scale channel. Conversely, photonic applications often require 100 nm to 1 μm features on large areas. In this work, we report on the fabrication of both large-area periodic master structures with resolution down to 200 nm, and planar metallic electrodes with sub-10 nm separation obtained by EBL followed by metal electroplating deposition. The fabricated 3-terminal bio-nanodevices show a transistor-like behaviour with a maximum voltage gain of 0.76. Moreover, we developed a number of mechanical patterning methods, including soft hot embossing, rapid prototyping, sub-micrometer fluidics, high- and room-temperature nanoimprinting, to fabricate planar nanostructures on both biomolecular and organic materials. These allowed us a high-fidelity pattern transfer up to 100-nm scale resolution, without reducing the emission yields of light-emitting organics, thus opening the way to the one-step realization of organic-based confined optoelectronic devices

Characterization of Bragg gratings in Al2O3 waveguides fabricated by focused ion beam milling and laser interference lithography

NARCIS (Netherlands)

Ay, F.; Bernhardi, Edward; Agazzi, L.; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; de Ridder, R.M.

Optical grating cavities in Al2O3 channel waveguides were successfully defined by focused ion beam milling and laser interference lithography. Both methods are shown to be suitable for realizing resonant structures for on-chip waveguide lasers.

Unified Modeling Language description of the object-oriented multi-scale adaptive finite element method for Step-and-Flash Imprint Lithography Simulations

International Nuclear Information System (INIS)

Paszynski, Maciej; Gurgul, Piotr; Sieniek, Marcin; Pardo, David

2010-01-01

In the first part of the paper we present the multi-scale simulation of the Step-and-Flash Imprint Lithography (SFIL), a modern patterning process. The simulation utilizes the hp adaptive Finite Element Method (hp-FEM) coupled with Molecular Statics (MS) model. Thus, we consider the multi-scale problem, with molecular statics applied in the areas of the mesh where the highest accuracy is required, and the continuous linear elasticity with thermal expansion coefficient applied in the remaining part of the domain. The degrees of freedom from macro-scale element's nodes located on the macro-scale side of the interface have been identified with particles from nano-scale elements located on the nano-scale side of the interface. In the second part of the paper we present Unified Modeling Language (UML) description of the resulting multi-scale application (hp-FEM coupled with MS). We investigated classical, procedural codes from the point of view of the object-oriented (O-O) programming paradigm. The discovered hierarchical structure of classes and algorithms makes the UML project as independent on the spatial dimension of the problem as possible. The O-O UML project was defined at an abstract level, independent on the programming language used.

Metrology study of high precision mm parts made by the deep x-ray lithography (LIGA) technique

International Nuclear Information System (INIS)

Mäder, Olaf; Meyer, Pascal; Saile, Volker; Schulz, Joachim

2009-01-01

Microcomponents are increasingly applied in industrial products, e.g. smallest gears, springs or the watch industry. Apart from their small dimensions, such components are characterized by a high contour accuracy. Industry requires the tolerances to be in the µm range. Measurement of lateral dimensions in the mm range with submicrometer accuracy and precision, however, results in high requirements on measurement technology. The relevance of this problem is illustrated by the fact that the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) has launched the Collaborative Research Center 1159 on 'New Strategies of Measurement and Inspection for the Production of Microsystems and Nanostructures'. The Institut für Mikrostrukturtechnik, Karlsruhe (Institute of Microstructure Technology, Karlsruhe), produces microstructures by means of the LIG(A) technique (German acronym for lithography, electrodeposition, molding). Presently, a coordinate measurement machine equipped with an optical fiber probe to measure these microstructures is being tested. This paper will particularly focus on the precision and accuracy of the machine. The rules of measurement system analysis will be applied for this purpose. Following the elimination of the systematic error, reproducibility of deep-etch x-ray lithography will be highlighted using the LIGA production of gold gears as an example

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: kawasegi@eng.u-toyama.ac.jp; Morita, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: nmorita@eng.u-toyama.ac.jp; Yamada, Shigeru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: syamada@eng.u-toyama.ac.jp; Takano, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: takano@eng.u-toyama.ac.jp; Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: ohyama@eng.u-toyama.ac.jp; Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kami, Kochi 782-8502 (Japan)]. E-mail: momota.sadao@kochi-tech.ac.jp; Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: junt@te.noda.tus.ac.jp; Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: iwao@te.noda.tus.ac.jp

2007-01-15

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.

Facile fabrication of microfluidic surface-enhanced Raman scattering devices via lift-up lithography

Science.gov (United States)

Wu, Yuanzi; Jiang, Ye; Zheng, Xiaoshan; Jia, Shasha; Zhu, Zhi; Ren, Bin; Ma, Hongwei

2018-04-01

We describe a facile and low-cost approach for a flexibly integrated surface-enhanced Raman scattering (SERS) substrate in microfluidic chips. Briefly, a SERS substrate was fabricated by the electrostatic assembling of gold nanoparticles, and shaped into designed patterns by subsequent lift-up soft lithography. The SERS micro-pattern could be further integrated within microfluidic channels conveniently. The resulting microfluidic SERS chip allowed ultrasensitive in situ SERS monitoring from the transparent glass window. With its advantages in simplicity, functionality and cost-effectiveness, this method could be readily expanded into optical microfluidic fabrication for biochemical applications.

Low-Cost Fabrication of Hollow Microneedle Arrays Using CNC Machining and UV Lithography

DEFF Research Database (Denmark)

Lê Thanh, Hoà; Ta, B.Q.; Le The, H.

2015-01-01

In order to produce disposable microneedles for blood-collection devices in smart homecare monitoring systems, we have developed a simple low-cost scalable process for mass fabrication of sharp-tipped microneedle arrays. The key feature in this process is a design of computer numerical control......-machined aluminum sample (CAS). The inclined sidewalls on the CAS enable microfabricated traditional-shaped microneedles (TMNs) to be produced in the desired shape. This process provides significant advantages over other methods that use inclined lithography or anisotropic wet etching. TMNs with a length of 1510 mu...

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

KAUST Repository

Tu, Kun-Hua; Fernandez Martin, Eduardo; almasi, hamid; Wang, Weigang; Navas Otero, David; Ntetsikas, Konstantinos; Moschovas, Dimitrios; Avgeropoulos, Apostolos; Ross, Caroline A

2018-01-01

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

Science.gov (United States)

Buitrago, Elizabeth; Fallica, Roberto; Fan, Daniel; Karim, Waiz; Vockenhuber, Michaela; van Bokhoven, Jeroen A.; Ekinci, Yasin

2016-09-01

Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

Project Stakeholder Management in the clinical research environment: how to do it right.

Directory of Open Access Journals (Sweden)

Seithikurippu R. Pandi-Perumal

2015-05-01

Full Text Available This review introduces a conceptual framework for understanding stakeholder management in the clinical and community-based research environment. In recent years, an evolution in practice has occurred in which many applicants for public and non-governmental funding of public health research in hospital settings. Community health research projects are inherently complex, have sought to involve patients and other stakeholders in the center of the research process. Substantial evidence has now been provided that stakeholder involvement is essential for management effectiveness in clinical research. Feedback from stakeholders has critical value for research managers inasmuch as it alerts them to the social, environmental and ethical implications of research activities. Additionally those who are directly affected by program development and clinical research, the patients, their families, and others, almost universally have a strong motivation to be involved in the planning and execution of new program changes. The current overview introduces a conceptual framework for stakeholder management in the clinical research environment and offers practical suggestions for fostering meaningful stakeholder engagement. The fifth edition of PMBOK® of the Project Management Institute (PMI, has served as basis for many of the suggested guidelines that are put forward in this article.

Project Stakeholder Management in the Clinical Research Environment: How to Do it Right

Science.gov (United States)

Pandi-Perumal, Seithikurippu R.; Akhter, Sohel; Zizi, Ferdinard; Jean-Louis, Girardin; Ramasubramanian, Chellamuthu; Edward Freeman, R.; Narasimhan, Meera

2015-01-01

This review introduces a conceptual framework for understanding stakeholder management (ShM) in the clinical and community-based research environment. In recent years, an evolution in practice has occurred in many applicants for public and non-governmental funding of public health research in hospital settings. Community health research projects are inherently complex, have sought to involve patients and other stakeholders in the center of the research process. Substantial evidence has now been provided that stakeholder involvement is essential for management effectiveness in clinical research. Feedback from stakeholders has critical value for research managers inasmuch as it alerts them to the social, environmental, and ethical implications of research activities. Additionally, those who are directly affected by program development and clinical research, the patients, their families, and others, almost universally have a strong motivation to be involved in the planning and execution of new program changes. The current overview introduces a conceptual framework for ShM in the clinical research environment and offers practical suggestions for fostering meaningful stakeholder engagement. The fifth edition of PMBOK® of the Project Management Institute, has served as basis for many of the suggested guidelines that are put forward in this article. PMID:26042053

Project Stakeholder Management in the Clinical Research Environment: How to Do it Right.

Science.gov (United States)

Pandi-Perumal, Seithikurippu R; Akhter, Sohel; Zizi, Ferdinard; Jean-Louis, Girardin; Ramasubramanian, Chellamuthu; Edward Freeman, R; Narasimhan, Meera

2015-01-01

This review introduces a conceptual framework for understanding stakeholder management (ShM) in the clinical and community-based research environment. In recent years, an evolution in practice has occurred in many applicants for public and non-governmental funding of public health research in hospital settings. Community health research projects are inherently complex, have sought to involve patients and other stakeholders in the center of the research process. Substantial evidence has now been provided that stakeholder involvement is essential for management effectiveness in clinical research. Feedback from stakeholders has critical value for research managers inasmuch as it alerts them to the social, environmental, and ethical implications of research activities. Additionally, those who are directly affected by program development and clinical research, the patients, their families, and others, almost universally have a strong motivation to be involved in the planning and execution of new program changes. The current overview introduces a conceptual framework for ShM in the clinical research environment and offers practical suggestions for fostering meaningful stakeholder engagement. The fifth edition of PMBOK(®) of the Project Management Institute, has served as basis for many of the suggested guidelines that are put forward in this article.

Between a rock and a hard place: Management and implementation teams’ expectations of project managers in an agile information systems delivery environment

Directory of Open Access Journals (Sweden)

Songezo Nkukwana

2017-08-01

Objectives: This case study investigated how project managers could adapt to agile IS implementation environments to remain relevant. Specifically, the views of their key stakeholders (the management and implementation teams were elicited to provide insights into what is expected from agile project managers. Method: A qualitative, inductive content analysis approach using purposive sampling was used to identify 13 participants (comprising management and implementation team members within a large South African insurance company. Semi-structured interviews were conducted with all participants. Results: The management and implementation teams agreed that PM remains highly relevant in an agile environment for ensuring project governance including delivery, risk management, reporting and budgeting. There was, however, disagreement between the management and implementation teams on project management interaction with the implementation team. Management preferred a command and control type project manager, while the implementation team favoured a more inclusive, facilitative PM style. Conclusion: To remain viable in an agile IS project implementation environment within large corporates, project managers need to be aware of what various stakeholders expect of them. They need to retain some of the classic PM functions while adapting to the interpersonal and collaborative requirements of the agile way.

Knowledge Management in a Project Environment: Organisational CT and Project Influences

OpenAIRE

Polyaninova, Taya

2011-01-01

During a project implementation various forms of information and experience are generated within the organization. If this accumulated knowledge is not recorded and shared amongst other projects, this knowledge will be lost and no longer be available to assist future projects. This may lead to increased future projects costs as resources, time and money will be wasted on redefining the knowledge that once existed within the company. By not capturing and redeploying this knowledge, the quality...

Magnetic Nanoparticles: Material Engineering and Emerging Applications in Lithography and Biomedicine

Science.gov (United States)

Bao, Yuping; Wen, Tianlong; Samia, Anna Cristina S.; Khandhar, Amit; Krishnan, Kannan M.

2015-01-01

We present an interdisciplinary overview of material engineering and emerging applications of iron oxide nanoparticles. We discuss material engineering of nanoparticles in the broadest sense, emphasizing size and shape control, large-area self-assembly, composite/hybrid structures, and surface engineering. This is followed by a discussion of several non-traditional, emerging applications of iron oxide nanoparticles, including nanoparticle lithography, magnetic particle imaging, magnetic guided drug delivery, and positive contrast agents for magnetic resonance imaging. We conclude with a succinct discussion of the pharmacokinetics pathways of iron oxide nanoparticles in the human body –– an important and required practical consideration for any in vivo biomedical application, followed by a brief outlook of the field. PMID:26586919

Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths.

Science.gov (United States)

Mojarad, Nassir; Fan, Daniel; Gobrecht, Jens; Ekinci, Yasin

2014-04-15

Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

Retrieve polarization aberration from image degradation: a new measurement method in DUV lithography

Science.gov (United States)

Xiang, Zhongbo; Li, Yanqiu

2017-10-01

Detailed knowledge of polarization aberration (PA) of projection lens in higher-NA DUV lithographic imaging is necessary due to its impact to imaging degradations, and precise measurement of PA is conductive to computational lithography techniques such as RET and OPC. Current in situ measurement method of PA thorough the detection of degradations of aerial images need to do linear approximation and apply the assumption of 3-beam/2-beam interference condition. The former approximation neglects the coupling effect of the PA coefficients, which would significantly influence the accuracy of PA retrieving. The latter assumption restricts the feasible pitch of test masks in higher-NA system, conflicts with the Kirhhoff diffraction model of test mask used in retrieving model, and introduces 3D mask effect as a source of retrieving error. In this paper, a new in situ measurement method of PA is proposed. It establishes the analytical quadratic relation between the PA coefficients and the degradations of aerial images of one-dimensional dense lines in coherent illumination through vector aerial imaging, which does not rely on the assumption of 3-beam/2- beam interference and linear approximation. In this case, the retrieval of PA from image degradation can be convert from the nonlinear system of m-quadratic equations to a multi-objective quadratic optimization problem, and finally be solved by nonlinear least square method. Some preliminary simulation results are given to demonstrate the correctness and accuracy of the new PA retrieving model.

On-wire lithography-generated molecule-based transport junctions: a new testbed for molecular electronics.

Science.gov (United States)

Chen, Xiaodong; Jeon, You-Moon; Jang, Jae-Won; Qin, Lidong; Huo, Fengwei; Wei, Wei; Mirkin, Chad A

2008-07-02

On-wire lithography (OWL) fabricated nanogaps are used as a new testbed to construct molecular transport junctions (MTJs) through the assembly of thiolated molecular wires across a nanogap formed between two Au electrodes. In addition, we show that one can use OWL to rapidly characterize a MTJ and optimize gap size for two molecular wires of different dimensions. Finally, we have used this new testbed to identify unusual temperature-dependent transport mechanisms for alpha,omega-dithiol terminated oligo(phenylene ethynylene).

Physics-based Space Weather Forecasting in the Project for Solar-Terrestrial Environment Prediction (PSTEP) in Japan

Science.gov (United States)

Kusano, K.

2016-12-01

Project for Solar-Terrestrial Environment Prediction (PSTEP) is a Japanese nation-wide research collaboration, which was recently launched. PSTEP aims to develop a synergistic interaction between predictive and scientific studies of the solar-terrestrial environment and to establish the basis for next-generation space weather forecasting using the state-of-the-art observation systems and the physics-based models. For this project, we coordinate the four research groups, which develop (1) the integration of space weather forecast system, (2) the physics-based solar storm prediction, (3) the predictive models of magnetosphere and ionosphere dynamics, and (4) the model of solar cycle activity and its impact on climate, respectively. In this project, we will build the coordinated physics-based model to answer the fundamental questions concerning the onset of solar eruptions and the mechanism for radiation belt dynamics in the Earth's magnetosphere. In this paper, we will show the strategy of PSTEP, and discuss about the role and prospect of the physics-based space weather forecasting system being developed by PSTEP.

Electrolytic etching of fine stainless-steel pipes patterned by laser-scan lithography

Science.gov (United States)

Takahashi, Hiroshi; Sagara, Tomoya; Horiuchi, Toshiyuki

2017-07-01

Recently, it is required to develop a method for fabricating cylindrical micro-components in the field of measurement and medical engineering. Here, electrolytic etching of fine stainless-steel pipes patterned by laser-scan lithography was researched. The pipe diameter was 100 μm. At first, a pipe coated with 3-7 μm thick positive resist (tok, PMER P LA-900) was exposed to a violet laser beam with a wavelength of 408 nm (Neoark,TC20-4030-45). The laser beam was reshaped in a circle by placing a pinhole, and irradiated on the pipe by reducing the size in 1/20 using a reduction projection optics. Linearly arrayed 22 slit patterns with a width of 25 μm and a length of 175 μm were delineated in every 90-degree circumferential direction. That is, 88 slits in total were delineated at an exposure speed of 110 μm/s. In the axial direction, patterns were delineated at intervals of 90 μm. Following the pattern delineation, the pipe masked by the resist patterns was electrolytically etched. The pipe was used as an anode and an aluminum cylinder was set as a cathode around the pipe. As the electrolyte, aqueous solution of NaCl and NH4Cl was used. After etching the pipe, the resist was removed by ultrasonic cleaning in acetone. Although feasibility for fabricating multi-slit pipes was demonstrated, sizes of the etched slits were enlarged being caused by the undercut, and the shapes were partially deformed, and all the pipes were snapped at the chuck side.

The development of 8 inch roll-to-plate nanoimprint lithography (8-R2P-NIL) system

Science.gov (United States)

Lee, Lai Seng; Mohamed, Khairudin; Ooi, Su Guan

2017-07-01

Growth in semiconductor and integrated circuit industry was observed in the past decennium of years for industrial technology which followed Moore's law. The line width of nanostructure to be exposed was influenced by the essential technology of photolithography. Thus, it is crucial to have a low cost and high throughput manufacturing process for nanostructures. Nanoimprint Lithography technique invented by Stephen Y. Chou was considered as major nanolithography process to be used in future integrated circuit and integrated optics. The drawbacks of high imprint pressure, high imprint temperature, air bubbles formation, resist sticking to mold and low throughput of thermal nanoimprint lithography on silicon wafer have yet to be solved. Thus, the objectives of this work is to develop a high throughput, low imprint force, room temperature UV assisted 8 inch roll to plate nanoimprint lithography system capable of imprinting nanostructures on 200 mm silicon wafer using roller imprint with flexible mold. A piece of resist spin coated silicon wafer was placed onto vacuum chuck drives forward by a stepper motor. A quartz roller wrapped with a piece of transparent flexible mold was used as imprint roller. The imprinted nanostructures were cured by 10 W, 365 nm UV LED which situated inside the quartz roller. Heat generated by UV LED was dissipated by micro heat pipe. The flexible mold detaches from imprinted nanostructures in a 'line peeling' pattern and imprint pressure was measured by ultra-thin force sensors. This system has imprinting speed capability ranging from 0.19 mm/s to 5.65 mm/s, equivalent to imprinting capability of 3 to 20 pieces of 8 inch wafers per hour. Speed synchronization between imprint roller and vacuum chuck was achieved by controlling pulse rate supplied to stepper motor which drive the vacuum chuck. The speed different ranging from 2 nm/s to 98 nm/s is achievable. Vacuum chuck height was controlled by stepper motor with displacement of 5 nm/step.

Traditional Project Management and the Visual Workplace Environment to Improve Project Success

Science.gov (United States)

Fichera, Christopher E.

2016-01-01

A majority of large IT projects fail to meet scheduled deadlines, are over budget and do not satisfy the end user. Many projects fail in spite of utilizing traditional project management techniques. Research of project management has not identified the use of a visual workspace as a feature affecting or influencing the success of a project during…

Solid state microcavity dye lasers fabricated by nanoimprint lithography

DEFF Research Database (Denmark)

Nilsson, Daniel; Nielsen, Theodor; Kristensen, Anders

2004-01-01

propagating TE–TM modes. The laser cavity has the lateral shape of a trapezoid, supporting lasing modes by reflection on the vertical cavity walls. The solid polymer dye lasers emit laterally through one of the vertical cavity walls, when pumped optically through the top surface by means of a frequency...... doubled, pulsed Nd:YAG laser. Lasing in the wavelength region from 560 to 570 nm is observed from a laser with a side-length of 50 µm. In this proof of concept, the lasers are multimode with a mode wavelength separation of approximately 1.6 nm, as determined by the waveguide propagation constant......We present a solid state polymer microcavity dye laser, fabricated by thermal nanoimprint lithography (NIL) in a dye-doped thermoplast. The thermoplast poly-methylmethacrylate (PMMA) is used due to its high transparency in the visible range and its robustness to laser radiation. The laser dye...

Nanoparticles with tunable shape and composition fabricated by nanoimprint lithography.

Science.gov (United States)

Alayo, Nerea; Conde-Rubio, Ana; Bausells, Joan; Borrisé, Xavier; Labarta, Amilcar; Batlle, Xavier; Pérez-Murano, Francesc

2015-11-06

Cone-like and empty cup-shaped nanoparticles of noble metals have been demonstrated to provide extraordinary optical properties for use as optical nanoanntenas or nanoresonators. However, their large-scale production is difficult via standard nanofabrication methods. We present a fabrication approach to achieve arrays of nanoparticles with tunable shape and composition by a combination of nanoimprint lithography, hard-mask definition and various forms of metal deposition. In particular, we have obtained arrays of empty cup-shaped Au nanoparticles showing an optical response with distinguishable features associated with the excitations of localized surface plasmons. Finally, this route avoids the most common drawbacks found in the fabrication of nanoparticles by conventional top-down methods, such as aspect ratio limitation, blurring, and low throughput, and it can be used to fabricate nanoparticles with heterogeneous composition.

Nanoimprint Lithography on curved surfaces prepared by fused deposition modelling

International Nuclear Information System (INIS)

Köpplmayr, Thomas; Häusler, Lukas; Bergmair, Iris; Mühlberger, Michael

2015-01-01

Fused deposition modelling (FDM) is an additive manufacturing technology commonly used for modelling, prototyping and production applications. The achievable surface roughness is one of its most limiting aspects. It is however of great interest to create well-defined (nanosized) patterns on the surface for functional applications such as optical effects, electronics or bio-medical devices. We used UV-curable polymers of different viscosities and flexible stamps made of poly(dimethylsiloxane) (PDMS) to perform Nanoimprint Lithography (NIL) on FDM-printed curved parts. Substrates with different roughness and curvature were prepared using a commercially available 3D printer. The nanoimprint results were characterized by optical light microscopy, profilometry and atomic force microscopy (AFM). Our experiments show promising results in creating well-defined microstructures on the 3D-printed parts. (paper)

Nanoparticles with tunable shape and composition fabricated by nanoimprint lithography

International Nuclear Information System (INIS)

Alayo, Nerea; Bausells, Joan; Pérez-Murano, Francesc; Conde-Rubio, Ana; Labarta, Amilcar; Batlle, Xavier; Borrisé, Xavier

2015-01-01

Cone-like and empty cup-shaped nanoparticles of noble metals have been demonstrated to provide extraordinary optical properties for use as optical nanoanntenas or nanoresonators. However, their large-scale production is difficult via standard nanofabrication methods. We present a fabrication approach to achieve arrays of nanoparticles with tunable shape and composition by a combination of nanoimprint lithography, hard-mask definition and various forms of metal deposition. In particular, we have obtained arrays of empty cup-shaped Au nanoparticles showing an optical response with distinguishable features associated with the excitations of localized surface plasmons. Finally, this route avoids the most common drawbacks found in the fabrication of nanoparticles by conventional top-down methods, such as aspect ratio limitation, blurring, and low throughput, and it can be used to fabricate nanoparticles with heterogeneous composition. (paper)

Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

KAUST Repository

Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang

2013-01-01

A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half

Hazardous materials in Aquatic environments of the Mississippi River basin. Quarterly project status report, 1 January 1994--30 March 1994

Energy Technology Data Exchange (ETDEWEB)

Abdelghani, A.

1994-06-01

Projects associated with this grant for studying hazardous materials in aquatic environments of the Mississippi River Basin are reviewed and goals, progress and research results are discussed. New, one-year initiation projects are described briefly.

Fabrication of quartz microcylinders by laser interference lithography for angular optical tweezers

Science.gov (United States)

Santybayeva, Zhanna; Meghit, Afaf; Desgarceaux, Rudy; Teissier, Roland; Pichot, Frederic; de Marin, Charles; Charlot, Benoit; Pedaci, Francesco

2016-07-01

The use of optical tweezers (OTs) and spin angular momentum transfer to birefringent particles allows new mechanical measurements in systems where torque and rotation are relevant parameters at the single-molecule level. There is a growing interest in developing simple, fast, and inexpensive protocols to produce a large number of submicron scale cylinders of quartz, a positive uniaxial birefringent crystal, to be employed for such angular measurements in OTs. Here, we show that laser interference lithography, a method well known for its simplicity, fulfills these requirements and produces quartz cylindrical particles that we successfully use to apply and measure optical torque in the piconewton nm range in an optical torque wrench.

Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography

Science.gov (United States)

Liu, Sen; Glodde, Martin; Varanasi, Pushkara R.

2010-04-01

Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, concerns have been raised about their environmental impact due to their chemical persistency, bioaccumulation and toxicity. It is a general interest to find environmentally benign PAGs that are free of fluorine atoms. Here we describe the design, synthesis and characterization of a series of novel fluorine-free onium salts as PAGs for 193 nm photoresists. These PAGs demonstrated desirable physical and lithography properties when compared with PFAS-based PAGs for both dry and immersion exposures.

Alkali-developable silicone-based negative photoresist (SNP) for deep UV, electron beam, and X-ray lithographies

International Nuclear Information System (INIS)

Ban, Hiroshi; Tanaka, Akinobu; Kawai, Yoshio; Deguchi, Kimiyoshi

1989-01-01

A new silicone-based negative photoresist (SNP) developable with alkaline aqueous solutions is prepared. SNP composed of acetylated phenylsilsesquioxane oligomer and azidopyrene is applied to deep UV, electron beam (EB), and X-ray lithographies. SNP slightly swells in alkaline developers, thus exhibiting exceptionally high resolution characteristics for a negative resist. The resistance of SNP to oxygen reactive ion etching is approximately 30 times greater than that of conventional novolac resists. (author)

Challenges in Projecting Sea Level Rise impacts on the Coastal Environment of South Florida (Invited)

Science.gov (United States)

Obeysekera, J.; Park, J.; Irizarry-Ortiz, M. M.; Barnes, J. A.; Trimble, P.; Said, W.

2010-12-01

Due to flat topography, a highly transmissive groundwater aquifer, and a growing population with the associated infrastructure, South Florida’s coastal environment is one of the most vulnerable areas to sea level rise. Current projections of sea level rise and the associated storm surges will have direct impacts on coastal beaches and infrastructure, flood protection, freshwater aquifers, and both the isolated and regional wetlands. Uncertainties in current projections have made it difficult for regional and local governments to develop adaptation strategies as such measures will depend heavily on the temporal and spatial patterns of sea level rise in the coming decades. We demonstrate the vulnerability of both the built and natural environments of the coastal region and present the current efforts to understand and predict the sea level rise estimate that management agencies could employ in planning of adaptation strategies. In particular, the potential vulnerabilities of the flood control system as well as the threat to the water supply wellfields in the coastal belt will be presented. In an effort to understand the historical variability of sea level rise, we present linkages to natural phenomena such as Atlantic Multi-Decadal Oscillation, and the analytical methods we have developed to provide probabilistic projections of both mean sea level rise and the extremes.

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

Science.gov (United States)

Sturtevant, John; Tejnil, Edita; Buck, Peter D.; Schulze, Steffen; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-09-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. Many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine via simulation, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and communication between mask and OPC model experts. The simulations are done by ignoring the wafer photoresist model, and show the sensitivity of predictions to various model inputs associated with the mask. It is shown that the wafer simulations are very dependent upon the 1D/2D representation of the mask and for 3D, that the mask sidewall angle is a very sensitive factor influencing simulated wafer CD results.

Mask compensation for process flare in 193nm very low k1 lithography

Science.gov (United States)

Lee, Jeonkyu; Lee, Taehyeong; Oh, Sangjin; Kang, Chunsoo; Kim, Jungchan; Choi, Jaeseung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Do, Munhoe; Su, Irene; Song, Hua; Choi, Jung-Hoe; Fan, Yongfa; Wang, Anthony C.; Lee, Sung-Woo; Boone, Robert; Lucas, Kevin

2013-04-01

Traditional rule-based and model-based OPC methods only simulate in a very local area (generally less than 1um) to identify and correct for systematic optical or process problems. Despite this limitation, however, these methods have been very successful for many technology generations and have been a major reason for the industry being able to tremendously push down lithographic K1. This is also enabled by overall good across-exposure field lithographic process control which has been able to minimize longer range effects across the field. Now, however, the situation has now become more complex. The lithographic single exposure resolution limit with 1.35NA tools remains about 80nm pitch but the final wafer dimensions and final wafer pitches required in advanced technologies continue to scale down. This is putting severe strain on lithographic process and OPC CD control. Therefore, formerly less important 2nd order effects are now starting to have significant CD control impact if not corrected for. In this paper, we provide examples and discussion of how optical and chemical flare related effects are becoming more problematic, especially at the boundaries of large, dense memory arrays. We then introduce a practical correction method for these systematic effects which reuses some of the recent long range effect correcting OPC techniques developed for EUV pattern correction (such as EUV flare). We next provide analysis of the benefits of these OPC methods for chemical flare issues in 193nm lithography very low K1 lithography. Finally, we summarize our work and briefly mention possible future extensions.

The I.A.G. / A.I.G. SEDIBUD Book Project: Source-to-Sink Fluxes in Undisturbed Cold Environments

Science.gov (United States)

Beylich, Achim A.; Dixon, John C.; Zwolinski, Zbigniew

2015-04-01

The currently prepared SEDIBUD Book on "Source-to-Sink Fluxes in Undisturbed Cold Environments" (edited by Achim A. Beylich, John C. Dixon and Zbigniew Zwolinski and published by Cambridge University Press) is summarizing and synthesizing the achievements of the International Association of Geomorphologists` (I.A.G./A.I.G.) Working Group SEDIBUD (Sediment Budgets in Cold Environments), which has been active since 2005 (http://www.geomorph.org/wg/wgsb.html). Amplified climate change and ecological sensitivity of largely undisturbed polar and high-altitude cold climate environments have been highlighted as key global environmental issues. The effects of projected climate change will change surface environments in cold regions and will alter the fluxes of sediments, nutrients and solutes, but the absence of quantitative data and coordinated geomorphic process monitoring and analysis to understand the sensitivity of the Earth surface environment in these largely undisturbed environments is acute. Our book addresses this existing key knowledge gap. The applied approach of integrating comparable and longer-term field datasets on contemporary solute and sedimentary fluxes from a number of different defined cold climate catchment geosystems for better understanding (i) the environmental drivers and rates of contemporary denudational surface processes and (ii) possible effects of projected climate change in cold regions is unique in the field of geomorphology. Largely undisturbed cold climate environments can provide baseline data for modeling the effects of environmental change. The book synthesizes work carried out by numerous SEDIBUD Members over the last decade in numerous cold climate catchment geosystems worldwide. For reaching a global cover of different cold climate environments the book is - after providing an introduction part and a basic part on climate change in cold environments and general implications for solute and sedimentary fluxes - dealing in different

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

Science.gov (United States)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-07-01

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated

Aging effect of AlF3 coatings for 193 nm lithography

Science.gov (United States)

Zhao, Jia; Wang, Lin; Zhang, Weili; Yi, Kui; Shao, Jianda

2018-02-01

As important part of components for 193 nm lithography, AlF3 coatings deposited by resistive heating method acquire advantages like lower optical loss and higher laser damage threshold, but they also possess some disadvantages like worse stability, which is what aging effect focuses on. AlF3 single-layer coatings were deposited; optical property, surface morphology and roughness, and composition were characterized in different periods. Owing to aging effect, refractive index and extinction coefficient increased; larger and larger roughness caused more and more scattering loss, which was in the same order with absorption at 193.4 nm and part of optical loss; from composition analysis, proportional substitution of AlF3 by alumina may account for changes in refractive index as well as absorption.

Development of an MeV ion beam lithography system in Jyvaeskylae

Energy Technology Data Exchange (ETDEWEB)

Gorelick, Sergey [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)]. E-mail: Sergey.Gorelick@phys.jyu.fi; Ylimaeki, Tommi [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sajavaara, Timo [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Laitinen, Mikko [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sagari, A.R.A. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Whitlow, Harry J. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)

2007-07-15

A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaeskylae cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 {mu}m side with protons up to 6 MeV and heavy ions ({sup 20}Ne, {sup 85}Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

A 3D-printed device for polymer nanoimprint lithography

Science.gov (United States)

Caño-García, Manuel; Geday, Morten A.; Gil-Valverde, Manuel; Megías Zarco, Antonio; Otón, José M.; Quintana, Xabier

2018-02-01

Nanoimprint lithography (NIL) is an imprinting technique which has experienced an increasing popularity due to its versatility in fabrication processes. Commercial NIL machines are readily available achieving high quality results; however, these machines involve a relatively high investment. Hence, small laboratories often choose to perform NIL copies in a more rudimentary and cheaper way. A new simple system is presented in this document. It is based on two devices which can be made in-house in plastic by using a 3D printer or in aluminum. Thus, the overall manufacturing complexity is vastly reduced. The presented system includes pressure control and potentially temperature control. Replicas have been made using a sawtooth grating master with a pitch around half micrometre. High quality patterns with low density of imperfections have been achieved in 2.25 cm2 surfaces. The material chosen for the negative intermediary mould is PDMS. Tests of the imprint have been performed using the commercial hybrid polymer Ormostamp®.

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.

Science.gov (United States)

Madaria, Anuj R; Yao, Maoqing; Chi, Chunyung; Huang, Ningfeng; Lin, Chenxi; Li, Ruijuan; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2012-06-13

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.

The Effect of a Graph-Oriented Computer-Assisted Project-Based Learning Environment on Argumentation Skills

Science.gov (United States)

Hsu, P. -S.; Van Dyke, M.; Chen, Y.; Smith, T. J.

2015-01-01

The purpose of this quasi-experimental study was to explore how seventh graders in a suburban school in the United States developed argumentation skills and science knowledge in a project-based learning environment that incorporated a graph-oriented, computer-assisted application. A total of 54 students (three classes) comprised this treatment…

How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature

Science.gov (United States)

Kawada, Hiroki; Kawasaki, Takahiro; Kakuta, Junichi; Ikota, Masami; Kondo, Tsuyoshi

2018-03-01

For EUV lithography features we want to decrease the dose and/or energy of CD-SEM's probe beam because LER decreases with severe resist-material's shrink. Under such conditions, however, measured LER increases from true LER, due to LER bias that is fake LER caused by random noise in SEM image. A gap error occurs between the right and the left LERs. In this work we propose new procedures to obtain true LER by excluding the LER bias from the measured LER. To verify it we propose a LER's reference-metrology using TEM.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers

Directory of Open Access Journals (Sweden)

Cheng Huang

2012-09-01

Full Text Available A rapid and cost-effective lithographic method, polymer blend lithography (PBL, is reported to produce patterned self-assembled monolayers (SAM on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity, the molar mass of the polystyrene (PS and poly(methyl methacrylate (PMMA, and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix can be reproducibly induced. Either of the formed phases (PS or PMMA can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This “monolayer copy” of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS and (3-aminopropyltriethoxysilane (APTES, and at the same time featuring regions of bare SiOx. The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures.

Pixelgram: an application of electron-beam lithography for the security printing industry

Science.gov (United States)

Lee, Robert A.

1991-10-01

Following the development of the Catpix I diffraction gratings structure first used on the 1988 Australian plastic DLR10 banknote and more recently on the Singapore plastic DLR50 banknote, the CSIRO Australia, Division of Materials Science & Technology has developed a new optical security and anti-counterfeiting technology known as Pixelgram (or Catpix 2). The Pixelgram, which is subject to patent, is an optically variable device based on a computerized procedure for producing an optically variable version of any given input picture, e.g., a photograph. When a Pixelgram is observed under a given source, such as a fluorescent tube, the image of the original input picture appears at particular angles of view. At other angles, the image varies in both contrast and brightness and can even appear as the photographic negative of the original input picture at some angles of view. As well as its ability to generate optically variable text and graphical images, Pixelgram has the unique capability of being able to display easily recognizable small scale optically variable images of the human face of near photographic clarity. Pixelgram optical security device master plates are produced by a technique borrowed from the microelectronics industry and known as electron beam lithography. In this technique, millions of microscopic grooves are written individually by a finely focused electron beam scanning across a glass plate coated with an electron sensitive material. On a typical Pixelgram there are approximately 2,000 million individual polygons etched into the plate by the electron beam. This corresponds to more than 10,000 megabytes of binary data. The only known electron beam lithography systems that have been able to write such large data files with the required precision are the Cambridge Instruments EBMF 10.5 and EBML 300 electron beam systems.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers.

Science.gov (United States)

Huang, Cheng; Moosmann, Markus; Jin, Jiehong; Heiler, Tobias; Walheim, Stefan; Schimmel, Thomas

2012-01-01

A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This "monolayer copy" of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO(x). The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures [1].

Linear optics and projective measurements alone suffice to create large-photon-number path entanglement

International Nuclear Information System (INIS)

Lee, Hwang; Kok, Pieter; Dowling, Jonathan P.; Cerf, Nicolas J.

2002-01-01

We propose a method for preparing maximal path entanglement with a definite photon-number N, larger than two, using projective measurements. In contrast with the previously known schemes, our method uses only linear optics. Specifically, we exhibit a way of generating four-photon, path-entangled states of the form vertical bar 4,0>+ vertical bar 0,4>, using only four beam splitters and two detectors. These states are of major interest as a resource for quantum interferometric sensors as well as for optical quantum lithography and quantum holography

Review on Micro- and Nanolithography Techniques and Their Applications

Directory of Open Access Journals (Sweden)

Werayut Srituravanich

2012-01-01

Full Text Available This article reviews major micro- and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering. Micro- and nanolithography has been the key technology in manufacturing of integrated circuits and microchips in the semiconductor industry. Such a technology is also sparking a magnificent transformation of nanotechnology. The lithography techniques including photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography and scanning probe lithography are discussed. Furthermore, their applications are reviewed and summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting.

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

Directory of Open Access Journals (Sweden)

Adrian Iovan

2012-12-01

Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction

Science.gov (United States)

Ueno, Takumi; Uchino, Shou-ichi; Hattori, Keiko T.; Onozuka, Toshihiko; Shirai, Seiichiro; Moriuchi, Noboru; Hashimoto, Michiaki; Koibuchi, S.

1994-05-01

Chemical amplification negative resist system composed of a novolak resin, a carbinol and an acid generator is investigated for i-line phase-shift lithography. The reaction in this resist is based on an acid-catalyzed intramolecular dehydration reaction. The dehydration products act as aqueous-base dissolution inhibitors, and carbinol compounds in unexposed areas work as dissolution promoters. The resist composed of a novolak resin, 1,4-bis((alpha) -hydroxyisopropyl) benzene (DIOL-1) and 2- naphthoylmethyltetramethylenesulfonium triflate (PAG-2) gives the best lithographic performance in terms of sensitivity and resolution. Line-and-space patterns of 0.275 micrometers are obtained using an i-line stepper (NA:0.45) in conjunction with a phase shifting mask.

Aberration measurement of projection optics in lithographic tools based on two-beam interference theory

International Nuclear Information System (INIS)

Ma Mingying; Wang Xiangzhao; Wang Fan

2006-01-01

The degradation of image quality caused by aberrations of projection optics in lithographic tools is a serious problem in optical lithography. We propose what we believe to be a novel technique for measuring aberrations of projection optics based on two-beam interference theory. By utilizing the partial coherent imaging theory, a novel model that accurately characterizes the relative image displacement of a fine grating pattern to a large pattern induced by aberrations is derived. Both even and odd aberrations are extracted independently from the relative image displacements of the printed patterns by two-beam interference imaging of the zeroth and positive first orders. The simulation results show that by using this technique we can measure the aberrations present in the lithographic tool with higher accuracy

Aberration measurement of projection optics in lithographic tools based on two-beam interference theory.

Science.gov (United States)

Ma, Mingying; Wang, Xiangzhao; Wang, Fan

2006-11-10

The degradation of image quality caused by aberrations of projection optics in lithographic tools is a serious problem in optical lithography. We propose what we believe to be a novel technique for measuring aberrations of projection optics based on two-beam interference theory. By utilizing the partial coherent imaging theory, a novel model that accurately characterizes the relative image displacement of a fine grating pattern to a large pattern induced by aberrations is derived. Both even and odd aberrations are extracted independently from the relative image displacements of the printed patterns by two-beam interference imaging of the zeroth and positive first orders. The simulation results show that by using this technique we can measure the aberrations present in the lithographic tool with higher accuracy.

The Costa Rica GLOBE (Global Learning and Observations to Benefit the Environment) Project as a Learning Science Environment

Science.gov (United States)

Castro Rojas, María Dolores; Zuñiga, Ana Lourdes Acuña; Ugalde, Emmanuel Fonseca

2015-12-01

GLOBE is a global educational program for elementary and high school levels, and its main purpose in Costa Rica is to develop scientific thinking and interest for science in high school students through hydrology research projects that allow them to relate science with environmental issues in their communities. Youth between 12 and 17 years old from public schools participate in science clubs outside of their regular school schedule. A comparison study was performed between different groups, in order to assess GLOBE's applicability as a learning science atmosphere and the motivation and interest it generates in students toward science. Internationally applied scales were used as tools for measuring such indicators, adapted to the Costa Rican context. The results provide evidence statistically significant that the students perceive the GLOBE atmosphere as an enriched environment for science learning in comparison with the traditional science class. Moreover, students feel more confident, motivated and interested in science than their peers who do not participate in the project. However, the results were not statistically significant in this last respect.

Investigating the Quality of Project-Based Science and Technology Learning Environments in Elementary School: A Critical Review of Instruments

Science.gov (United States)

Thys, Miranda; Verschaffel, Lieven; Van Dooren, Wim; Laevers, Ferre

2016-01-01

This paper provides a systematic review of instruments that have the potential to measure the quality of project-based science and technology (S&T) learning environments in elementary school. To this end, a comprehensive literature search was undertaken for the large field of S&T learning environments. We conducted a horizontal bottom-up…

Smartphone Sensors for Stone Lithography Authentication

Directory of Open Access Journals (Sweden)

Giuseppe Schirripa Spagnolo

2014-05-01

Full Text Available Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography.

Reflective masks for extreme ultraviolet lithography

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Khanh Bao [Univ. of California, Berkeley, CA (United States)

1994-05-01

Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

Alternative nano-structured thin-film materials used as durable thermal nanoimprint lithography templates

Science.gov (United States)

Bossard, M.; Boussey, J.; Le Drogoff, B.; Chaker, M.

2016-02-01

Nanoimprint templates made of diamond-like carbon (DLC) and amorphous silicon carbide (SiC) thin films and fluorine-doped associated materials, i.e. F-DLC and F-SiC were investigated in the context of thermal nanoimprint lithography (NIL) with respect to their release properties. Their performances in terms of durability and stability were evaluated and compared to those of conventional silicon or silica molds coated with antisticking molecules applied as a self-assembled monolayer. Plasma-enhanced chemical vapor deposition parameters were firstly tuned to optimize mechanical and structural properties of the DLC and SiC thin films. The impact of the amount of fluorine dopant on the deposited thin films properties was then analyzed. A comparative analysis of DLC, F-DLC as well as SiC and F-SiC molds was then carried out over multiple imprints, performed into poly (methyl methacrylate) (PMMA) thermo-plastic resist. The release properties of un-patterned films were evaluated by the measurement of demolding energies and surface energies, associated with a systematic analysis of the mold surface contamination. These analyses showed that the developed materials behave as intrinsically easy-demolding and contamination-free molds over series of up to 40 imprints. To our knowledge, it is the first time that such a large number of imprints has been considered within an exhaustive comparative study of materials for NIL. Finally, the developed materials went through standard e-beam lithography and plasma etching processes to obtain nanoscale-patterned templates. The replicas of those patterned molds, imprinted into PMMA, were shown to be of high fidelity and good stability after several imprints.

Mask characterization for CDU budget breakdown in advanced EUV lithography

Science.gov (United States)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2012-11-01

As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget

Fabrication of tunable diffraction grating by imprint lithography with photoresist mold

Science.gov (United States)

Yamada, Itsunari; Ikeda, Yusuke; Higuchi, Tetsuya

2018-05-01

We fabricated a deformable transmission silicone [poly(dimethylsiloxane)] grating using a two-beam interference method and imprint lithography and evaluated its optical characteristics during a compression process. The grating pattern with 0.43 μm depth and 1.0 μm pitch was created on a silicone surface by an imprinting process with a photoresist mold to realize a simple, low-cost fabrication process. The first-order diffraction transmittance of this grating reached 10.3% at 632.8 nm wavelength. We also measured the relationship between the grating period and compressive stress to the fabricated elements. The grating period changed from 1.0 μm to 0.84 μm by 16.6% compression of the fabricated element in one direction, perpendicular to the grooves, and the first-order diffraction transmittance was 8.6%.

Microfocussing of synchrotron X-rays using X-ray refractive lens developed at Indus-2 deep X-ray lithography beamline

International Nuclear Information System (INIS)

Dhamgaye, V.P.; Tiwari, M.K.; Lodha, G.S.; Sawhney, K.J.S.

2014-01-01

X-ray lenses are fabricated in polymethyl methacrylate using deep X-ray lithography beamline of Indus-2. The focussing performance of these lenses is evaluated using Indus-2 and Diamond Light Source Ltd. The process steps for the fabrication of X-ray lenses and microfocussing at 10 keV at moderate and low emittance sources are compared. (author)

Inventory of Federal energy-related environment and safety research for FY 1979. Volume II. Project listings and indexes

Energy Technology Data Exchange (ETDEWEB)

None

1980-12-01

This volume contains summaries of FY 1979 government-sponsored environment and safety research related to energy arranged by log number, which groups the projects by reporting agency. The log number is a unique number assigned to each project from a block of numbers set aside for each contributing agency. Information elements included in the summary listings are project title, principal investigators, research organization, project number, contract number, supporting organization, funding level, related energy sources with numbers indicating percentages of effort devoted to each, and R and D categories. A brief description of each project is given, and this is followed by subject index terms that were assigned for computer searching and for generating the printed subject index in the back of this volume.

Inventory of Federal energy-related environment and safety research for FY 1979. Volume II. Project listings and indexes

International Nuclear Information System (INIS)

1980-12-01

This volume contains summaries of FY 1979 government-sponsored environment and safety research related to energy arranged by log number, which groups the projects by reporting agency. The log number is a unique number assigned to each project from a block of numbers set aside for each contributing agency. Information elements included in the summary listings are project title, principal investigators, research organization, project number, contract number, supporting organization, funding level, related energy sources with numbers indicating percentages of effort devoted to each, and R and D categories. A brief description of each project is given, and this is followed by subject index terms that were assigned for computer searching and for generating the printed subject index in the back of this volume

Fitting the project into the environment : Gulf Heavy Oil Red Cross Projects

International Nuclear Information System (INIS)

Sakires, D.G.; Johannesen, D.V.

1998-01-01

A reservoir delineation project by Gulf Canada's Heavy Oil Division was reviewed. The six well drilling program was completed in 1997 with minimal negative environmental impacts. The program, dubbed the Red Cross project, took place in the Northern Boreal Forest of Saskatchewan. Its success is attributed to the early involvement of the regulatory agencies in Saskatchewan, on-site environmental investigations, the development of an environmental protection plan, conscientious construction practices, a monitoring program during construction, and a pro-active reclamation plan. The project area is identified as being environmentally sensitive and important as a wildlife habitat area. This successful project demonstrated the usefulness of pre-project planning and team work between industry and the regulators. Details of the planning, construction and planned remedial reclamation actions are described. 11 refs., 2 tabs

Single mode solid state distributed feedback dye laser fabricated by grey scale electron beam lithography on dye doped SU-8 resist

DEFF Research Database (Denmark)

Balslev, Søren; Rasmussen, Torben; Shi, Peixiong

2005-01-01

We demonstrate grey scale electron beam lithography on functionalized SU-8 resist for fabrication of single mode solid state dye laser devices. The resist is doped with Rhodamine 6G perchlorate and the lasers are based on a first order Bragg grating distributed feedback resonator. The lasers...

Social Sciences, Art and Physical Activity in Leisure Environments. An Inter-Disciplinary Project for Teacher Training

Directory of Open Access Journals (Sweden)

María Belén San Pedro Veledo

2018-05-01

Full Text Available Factors such as social change and increasing urbanization processes in the early years of the 21st century have caused a reduction in the amount of time that children devote to leisure activities in the open-air, resulting in more sedentary lifestyles than children in previous decades. An education in healthy habits from early ages to increase children’s physical and mental well-being together with their level of cultural knowledge contributes to the acquisition of a Leisure Culture that allows children to perceive the close environment as a scene for learning and enjoyment. It is thus be necessary for schools to foster pedagogical experiences, taking the physical and cultural environment as teaching resources. An innovation project is proposed which will be implemented with 25 university students from the School of Teacher Training and Education at the University of Oviedo (Oviedo, Spain. The project will consist of the proposal of educational itineraries through the city of Oviedo and Mount Naranco. As teachers-to-be, students must combine knowledge of the related areas and generate inter-disciplinary activities throughout the routes that will foster respect for the environment and leisure based on culture and physical activity, attitudes that they will transmit to their own students in the future.

Competency model for the project managers of technical projects

Science.gov (United States)

Duncan, William R.

1992-05-01

Traditional job description techniques were developed to support compensation decisions for hourly wage earners in a manufacturing environment. Their resultant focus on activities performed on the job works well in this environment where the ability to perform the activity adequately is objectively verifiable by testing and observation. Although many organizations have adapted these techniques for salaried employees and service environments, the focus on activities performed has never been satisfactory. For example, stating that a project manager `prepares regular project status reports' tells us little about what to look for in a potential project manager or how to determine if a practicing project manager is ready for additional responsibilities. The concept of a `competency model' has been developed within the last decade to address this shortcoming. Competency models focus on what skills are needed to perform the tasks defined by the job description. For example, a project manager must be able to communicate well both orally and in writing in order to `prepare regular project status reports.'