Sensitivity of low-energy incomplete fusion to various entrance-channel parameters

Science.gov (United States)

Kumar, Harish; Tali, Suhail A.; Afzal Ansari, M.; Singh, D.; Ali, Rahbar; Kumar, Kamal; Sathik, N. P. M.; Ali, Asif; Parashari, Siddharth; Dubey, R.; Bala, Indu; Kumar, R.; Singh, R. P.; Muralithar, S.

2018-03-01

The disentangling of incomplete fusion dependence on various entrance channel parameters has been made from the forward recoil range distribution measurement for the 12C+175Lu system at ≈ 88 MeV energy. It gives the direct measure of full and/or partial linear momentum transfer from the projectile to the target nucleus. The comparison of observed recoil ranges with theoretical ranges calculated using the code SRIM infers the production of evaporation residues via complete and/or incomplete fusion process. Present results show that incomplete fusion process contributes significantly in the production of α xn and 2α xn emission channels. The deduced incomplete fusion probability (F_{ICF}) is compared with that obtained for systems available in the literature. An interesting behavior of F_{ICF} with ZP ZT is observed in the reinvestigation of incomplete fusion dependency with the Coulomb factor (ZPZT), contrary to the recent observations. The present results based on (ZPZT) are found in good agreement with recent observations of our group. A larger F_{ICF} value for 12C induced reactions is found than that for 13C, although both have the same ZPZT. A nonsystematic behavior of the incomplete fusion process with the target deformation parameter (β2) is observed, which is further correlated with a new parameter (ZP ZT . β2). The projectile α -Q-value is found to explain more clearly the discrepancy observed in incomplete fusion dependency with parameters ( ZPZT) and (ZP ZT . β2). It may be pointed out that any single entrance channel parameter (mass-asymmetry or (ZPZT) or β2 or projectile α-Q-value) may not be able to explain completely the incomplete fusion process.

Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

Energy Technology Data Exchange (ETDEWEB)

Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

2016-09-15

Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

Entrance-channel effects in the population of superdeformed bands

Energy Technology Data Exchange (ETDEWEB)

Smith, G.; Haas, B.; Alderson, A.; Ali, I.; Beausang, C.W.; Bentley, M.A.; Dagnall, P.; Fallon, P.; de France, G.; Forsyth, P.D.; Huttmeier, U.; Romain, P.; Santos, D.; Twin, P.J.; Vivien, J.P. (Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 3BX (United Kingdom) Centre de Recherches Nucleaires, F-67037 Strasbourg CEDEX (France) Sciences and Engineering Research Council, Daresbury Laboratory, Warrington WA44AD (United Kingdom))

1992-01-13

In order to investigate whether entrance-channel effects influence the production of superdeformed nuclei, we have measured the yield of the yrast superdeformed band in {sup 152}Dy populated via nearly mass-symmetric ({sup 82}Se+{sup 74}Ge) and mass-asymmetric ({sup 48}Ca+{sup 108}Pd, {sup 36}S+{sup 120}Sn) fusion reactions leading to the same compound nucleus at similar excitation energies and angular momenta. Large differences in the relative intensity of the band compared with the total yield of the nucleus are observed in the various reactions. This effect indicates that the competition between fission and neutron evaporation is affected by the mode of formation of the fusing system.

High-Throughput Investigation of a Lead-Free AlN-Based Piezoelectric Material, (Mg,Hf)xAl1-xN.

Science.gov (United States)

Nguyen, Hung H; Oguchi, Hiroyuki; Van Minh, Le; Kuwano, Hiroki

2017-06-12

We conducted a high-throughput investigation of the fundamental properties of (Mg,Hf) x Al 1-x N thin films (0 piezoelectric materials. For the high-throughput investigation, we prepared composition-gradient (Mg,Hf) x Al 1-x N films grown on a Si(100) substrate at 600 °C by cosputtering AlN and MgHf targets. To measure the properties of the various compositions at different positions within a single sample, we used characterization techniques with spatial resolution. X-ray diffraction (XRD) with a beam spot diameter of 1.0 mm verified that Mg and Hf had substituted into the Al sites and caused an elongation of the c-axis of AlN from 5.00 Å for x = 0 to 5.11 Å for x = 0.24. In addition, the uniaxial crystal orientation and high crystallinity required for piezoelectric materials to be used as application devices were confirmed. The piezoelectric response microscope indicated that this c-axis elongation increased the piezoelectric coefficient almost linearly from 1.48 pm/V for x = 0 to 5.19 pm/V for x = 0.24. The dielectric constants of (Mg,Hf) x Al 1-x N were investigated using parallel plate capacitor structures with ∼0.07 mm 2 electrodes and showed a slight increase by substitution. These results verified that (Mg,Hf) x Al 1-x N is a promising material for piezoelectric-based application devices, especially for vibrational energy harvesters.

Beta decomposition of (Hf/sub x/Zr/sub 1-x/)80Nb20 ternary alloys

International Nuclear Information System (INIS)

Jones, W.B.; Taggart, R.; Polonis, D.H.

1978-01-01

The processes of beta decomposition have been examined in ternary alloys of the form (Hf/sub x/Zr/sub 1-x/) 80 Nb 20 to determine the influence of Hf additions to a basic Zr 80 Nb 20 composition. In the chill cast condition, Hf additions have been found to decrease the temperature coefficient of electrical resistivity from a value of -0.0015%/K for the binary Zr 80 Nb 20 alloy to a value of -0.011%/K for a (Hf 50 Zr 50 ) 80 Nb 20 ternary alloy. This change is explained in terms of the bcc lattice instability typical of Ti, Zr, and Hf alloys. The Hf additions enhance the kinetics of omega-phase precipitation during aging at 648 K. The aging of a (Hf 05 Zr 95 ) 80 Nb 20 alloy for 12 h results in the precipitation of a high volume fraction of cuboidal shaped omega-phase particles. A phase separation which results in the formation of solute lean discs (β/sub l/) occurs together with the precipitation of the omega-phase. These discs formed both randomly within the matrix and heterogeneously along dislocations and at grain boundaries

Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

Science.gov (United States)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-11-21

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

Fusion-fission of heavy systems: influence of the entrance channel mass assymmetry

International Nuclear Information System (INIS)

Rivet, M.F.; Alami, R.; Borderie, B.; Fuchs, H.; Gardes, D.; Gauvin, H.

1988-02-01

The influence of the entrance channel on fission processes was studied by forming the same composite system by two different target-projectile combinations ( 40 Ar + 209 Bi and 56 Fe + 187 Re, respectively). Compound nucleus fission and quasi fission were observed and the analysis was performed in the framework of the extra-extra-push model, which provides a qualitative interpretation of the results; limits for the extra-extra-push threshold are given, but problems with quantitative predictions for the extra-push are noted

Entrance skin dose on patients undergoing X-ray examinations at ...

African Journals Online (AJOL)

survey was conducted on the Entrance Skin Dose (ESD) in patients undergoing X-ray examinations [Skull Postero-Anterior (PA), Skull Lateral (LAT), Chest Postero-Anterior (PA), Chest Lateral (LAT), Abdomen Antero-Posterior (AP) and Pelvis Antero-Posterior (AP)] in five hospitals/Xray centres in Yaba, Lagos State, Nigeria ...

Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

Energy Technology Data Exchange (ETDEWEB)

Faita, F. L., E-mail: fabriciofaita@gmail.com [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC (Brazil); Silva, J. P. B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M. J. M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

2015-12-14

In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

大學多元入學制度：學生家庭社經背景與學業成就之比較 Multi-Channel College Entrance System: Relationship between Family Background, Academic Achievement and Entrance Channels

Directory of Open Access Journals (Sweden)

田芳華 Fang-Hua Tien

2009-03-01

Full Text Available 本文分析不同入學管道之大學生社經背景差異，並比較其學業成就。研究採問卷調查蒐集資料，調查母體為十二所大學之大一學生，並運用多項勝算對數模型和區間迴歸進行資料分析。研究發現為：一、在考慮性別、父母親籍貫、父親教育程度和職業及領域的情形下，母親教育程度較高者經由個人申請管道入學之機率較考試分發入學的機率大；二、當其他變項條件相同時，與攻讀人文社會領域者相比，攻讀自然理工領域者經個人申請或學校推薦管道入學的可能性較考試分發高；三、在控制性別、家庭社經地位、領域、公私立學校和學習主動性後，個人申請和推薦入學者的學業表現比考試分發者來得好。 Purposes of this research are: (1 Analyzing differences of family background among students who were admitted to colleges via different entrance channels; (2 Comparing academic achievement of college students who are enrolled via different entrance channels. A survey was conducted. The survey population is defined as the first year college students enrolling in twelve universities. Statistical methods employed in this study include multinomial logit regression and interval regression. The main findings are: (1 After controlling for the effects of gender, father’s ethnicity, mother’s ethnicity, father’s occupation, father’s education, and the respondents’ major, students of better educated mother tend to have higher chances of entering colleges via applying for admissions rather than taking entrance examination. (2 Holding other variables constant, the odds of applying for admissions to enter college compare to taking united entrance examination channel are higher among natural science and engineering students than humanities and social sciences students. (3 After considering the effects of gender, family socioeconomic status, majors, public or

Study of mass asymmetry effect in the entrance channel for deep inelastic collisions between heavy ions

International Nuclear Information System (INIS)

Agarwal, S.K.

1980-01-01

The reactions ( 52 Cr+ 56 Fe) and ( 16 O+ 92 Mo) were studied extensively to learn about the influence of the mass asymmetry of the entrance channel on Deep Inelastic Collisions (DIC). These two systems have very different entrance channel asymmetry but both of them lead to the same ensemble of nucleons. The incident energies were choosen to be 265 MeV for Cr and 187 MeV for O so that the maximum angular momentum is the same in both the cases. The experimental results of the quasi-symmetric system (Cr+Fe) show that a large number of fragments have the characteristic properties of fission fragments. However, comparison of these results with those of an asymmetric system (O+Mo), forming the same compound nucleus with higher excitation energy, leads to think that these events can not be accounted for fission. It has been shown that these events could be considered as DIC products. The distributions of different multidifferential observables were reproduced with the help of a diffusion model, and with the condition of introducing a notion of half life time of the composite system. The half-life, thus calculated, seems to vary as a function of mass asymmetry of the entrance channel: 20.10 -22 S for the system Cr+Fe, 2.10 -22 S for the system O+Mo and 10.10 -22 S for a third system 20 Ca+ 64 Ni which has an intermediate mass asymmetry. Further it seems that the evaporation residue cross section in symmetric systems is far less than what we can expect from classical calculations [fr

Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

Science.gov (United States)

Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

2018-03-01

In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

Hard magnetic off-stoichiometric (Fe,Sb){sub 2+x}Hf{sub 1-x} intermetallic phase

Energy Technology Data Exchange (ETDEWEB)

Goll, D.; Gross, T.; Loeffler, R.; Pflanz, U.; Vogel, T.; Kopp, A.; Grubesa, T.; Schneider, G. [Aalen University, Materials Research Institute (Germany)

2017-09-15

By high-throughput screening the ternary Fe-Hf-Sb system, off-stoichiometric (Fe,Sb){sub 2+x}Hf{sub 1-x} with a composition of Fe60.0-Hf26.5-Sb13.5 with high potential as hard magnetic phase is discovered. By quantitative domain structure analysis, promising intrinsic properties of J{sub s} ∝ 1 T, K{sub 1} ∝ 1.5 MJ m{sup -3} are found at room temperature. By magnetometry, bulk intrinsic properties of J{sub s} ∝ 0.7 T, K{sub 1} ∝ 1.4 MJ m{sup -3} are found. Alloying elements like Co or Mn turns out to be an effective adjusting screw on the crystal structure and ferromagnetic behavior. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Magnetic and magnetocaloric properties of itinerant-electron system Hf{sub 1−x}Ta{sub x}Fe{sub 2} (x = 0.125 and 0.175)

Energy Technology Data Exchange (ETDEWEB)

Diop, L.V.B. [Univ. Grenoble Alpes, Inst NEEL, F-38042 Grenoble (France); CNRS, Inst NEEL, F-38042 Grenoble (France); Kastil, J. [Univ. Grenoble Alpes, Inst NEEL, F-38042 Grenoble (France); CNRS, Inst NEEL, F-38042 Grenoble (France); Institute of Physics AS CR v.v.i., Na Slovance 2, 182 21 Prague 8 (Czech Republic); Isnard, O. [Univ. Grenoble Alpes, Inst NEEL, F-38042 Grenoble (France); CNRS, Inst NEEL, F-38042 Grenoble (France); Arnold, Z.; Kamarad, J. [Institute of Physics AS CR v.v.i., Na Slovance 2, 182 21 Prague 8 (Czech Republic)

2015-04-05

Highlights: • First report of the direct measurement of ΔT{sub ad} in Hf{sub 1−x}Ta{sub x}Fe{sub 2} compounds. • ΔT{sub ad} reach values of 2.5 K under μ{sub 0}ΔH = 3 T for x = 0.175 compound. • A field induced metamagnetic phase transition has been observed. - Abstract: Intrinsic magnetic properties and magnetocaloric effect (MCE) have been investigated for Hf{sub 1−x}Ta{sub x}Fe{sub 2} (x = 0.125 and 0.175) itinerant-electron compounds which exhibit a temperature-induced transition from the ferromagnetic (FM) to the antiferromagnetic (AFM) state. Upon increasing Ta concentration, the ferromagnetic ordering temperature strongly decreases with decreasing the lattice parameters and both the isothermal magnetic entropy change ΔS{sub M} and the adiabatic temperature change ΔT{sub ad} are enhanced. An adiabatic temperature change of ΔT{sub ad} = 2 and 2.5 K was observed in Hf{sub 0.875}Ta{sub 0.125}Fe{sub 2} and Hf{sub 0.825}Ta{sub 0.175}Fe{sub 2}, respectively, for a magnetic field change of 3 T. Therefore, the partial substitution of Ta for Hf is highly effective in the enhancement of the magnetocaloric effect in Hf{sub 1−x}Ta{sub x}Fe{sub 2} systems. In addition substitution can be used to tune both the transition temperature but also the magnetic transition from first toward second order type.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

Science.gov (United States)

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

2017-08-30

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

Site preference of metal atoms in Gd_5_-_xM_xTt_4 (M = Zr, Hf; Tt = Si, Ge)

International Nuclear Information System (INIS)

Yao, Jinlei; Mozharivskyj, Yurij

2011-01-01

Zirconium and hafnium were incorporated into the Gd_5Ge_4 and Gd_5Si_4 parent compounds in order to study the metal-site occupation in the M_5X_4 magnetocaloric phases (M = metals; X = p elements) family. The Gd_5_-_xZr_xGe_4 phases adopt the orthorhombic Sm_5Ge_4-type (space group Pnma) structure for x ≤ 1.49 and the tetragonal Zr_5Si_4-type (P4_12_12) structure for x ≥ 1.77. The Gd_5_-_xHf_xSi_4 compounds crystallize in the orthorhombic Gd_5Si_4-type (Pnma) structure for x ≤ 0.41 and the Zr_5Si_4-type structure for x ≥ 0.7. In both systems, single-crystal X-ray diffraction reveals that the Zr/Hf atoms preferentially occupy the slab-surface M2 and slab-center M3 sites, both of which have a significantly larger Zr/Hf population than the slab-surface M1 site. The metal-site preference, i.e. the coloring problem on the three metal sites, is discussed considering geometric and electronic effects of the local coordination environments. The analysis of the metal-site occupation in Gd_5_-_xZr_xGe_4 and Gd_5_-_xHf_xSi_4 as well as other metal-substituted M_5X_4 systems suggests that both geometric and electronic effects can be used to explain the metal-site occupation. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Experimental study of fluid flow in the entrance of a sinusoidal channel

International Nuclear Information System (INIS)

Oviedo-Tolentino, F.; Romero-Mendez, R.; Hernandez-Guerrero, A.; Giron-Palomares, B.

2008-01-01

An experimental flow visualization study of the entrance section of channels formed with sinusoidal plates was made. The experiments were conducted in a water tunnel and a laser illuminated particle tracking was used as the technique of flow visualization. The geometric parameters of the plates were maintained constant while the distance between plates, phase angle, and the Reynolds number were varied during the experiments. The flow regimes that were found in the experiments are steady, unsteady and significantly-mixed flows. Instabilities of the flow first appear near the exit of the channel, and move closer to the inlet waves as the Reynolds number grows, but in the first wave from inlet the flow is always steady. The results show that, for all other parameters fixed, the Reynolds number at which unsteady flow first appears grows with the distance between plates. The phase angle that best promotes unsteady flow depends on the average distance between plates: for certain average distance between plates, there is a phase angle that best disturbs the flow. For the set of parameters used in this experiment, a channel with eight waves is sufficiently long and the flow features presented in the first eight waves of a longer channel will be similar to what was observed here

Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x}

Energy Technology Data Exchange (ETDEWEB)

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Gloskovskii, A. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-02-10

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2−x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2−x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Hyperfine characterization of the Ba Ti{sub 1-x} Hf{sub x} O{sub 3} for x = 0.20; Caracterizacion hiperfina de Ba Ti{sub 1-x} Hf{sub x} O{sub 3} para x 0.20

Energy Technology Data Exchange (ETDEWEB)

Ayala, Alexandro; Lopez-Garcia, Alberto [La Plata Univ. Nacional (Argentina). Dept. de Fisica

1997-12-31

It is known that the cation substitution in perovskites produce changes in the macroscopic properties of these materials. A case to study is for example the influence of cation B partially substituted by cation B{sup `} when ABO{sub 3} is ferroelectric, and A B{sup `}O{sub 3} is paraelectric. In this work the system Ba Ti{sub 1-x} Hf{sub x} O{sub 3} with x = 0.05, 0.10, 0.15 and 0.20 is studied by Perturbed Angular Correlations (Pac) in order to obtain microscopic information through the electric field gradient tensor (EFG) produced by electrons close to probes. Two hyperfine quadrupole interactions were detected. One interaction associated to probes with defects originated during the nuclear processes after neutron irradiation, and the other are located in B sites. At R T, the hyperfine parameters are analyzed in terms of Hf concentration. (author). 5 refs., 2 figs., 2 tabs.

Fabrication and properties of La{sub 2-x}Gd{sub x}Hf{sub 2}O{sub 7} transparent ceramics

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhengjuan [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, Guohong, E-mail: sic_zhough@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Fang; Qin, Xianpeng [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Ai, Jianping [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Shiwei, E-mail: swwang51@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

2016-01-15

La{sub 2-x}Gd{sub x}Hf{sub 2}O{sub 7} (x=0–2.0) transparent ceramics were fabricated through vacuum sintering from nano-powders synthesized by a simple combustion method. The phase composition of the powders and final ceramics, the in-line transmittance, microstructures and density of the ceramics were investigated. With the increasing of Gd content, the ceramics maintained the cubic pyrochlore structure, and the lattice parameters decreased, whilst the densities increased linearly. All the ceramics were transparent. The highest in-line transmittance was 76.1% at 800 nm (x=1.2). With high density (7.91–8.88 g/cm{sup 3}) and effective atomic number, some of the La{sub 2-x}Gd{sub x}Hf{sub 2}O{sub 7} (x=0–2.0) transparent ceramics are promising candidates for scintillator hosts. - Highlights: • A new series of La{sub 2-x}Gd{sub x}Hf{sub 2}O{sub 7} transparent ceramics were fabricated by vacuum sintering using combustion-synthesized powders. • All the ceramics are transparent and the in-line transmittance can reach to 76.1% at 800 nm when x=1.2. • The Gd content has effects on the crystal structure, in-line transmittance, microstructures and densities of the ceramics. • With high density (7.91~8.88 g/cm3) and effective atomic number, some of the La2-xGdxHf2O7 transparent ceramics are promising candidates for scintillator hosts.

Fabrication and properties of La2-xGdxHf2O7 transparent ceramics

International Nuclear Information System (INIS)

Wang, Zhengjuan; Zhou, Guohong; Zhang, Fang; Qin, Xianpeng; Ai, Jianping; Wang, Shiwei

2016-01-01

La 2-x Gd x Hf 2 O 7 (x=0–2.0) transparent ceramics were fabricated through vacuum sintering from nano-powders synthesized by a simple combustion method. The phase composition of the powders and final ceramics, the in-line transmittance, microstructures and density of the ceramics were investigated. With the increasing of Gd content, the ceramics maintained the cubic pyrochlore structure, and the lattice parameters decreased, whilst the densities increased linearly. All the ceramics were transparent. The highest in-line transmittance was 76.1% at 800 nm (x=1.2). With high density (7.91–8.88 g/cm 3 ) and effective atomic number, some of the La 2-x Gd x Hf 2 O 7 (x=0–2.0) transparent ceramics are promising candidates for scintillator hosts. - Highlights: • A new series of La 2-x Gd x Hf 2 O 7 transparent ceramics were fabricated by vacuum sintering using combustion-synthesized powders. • All the ceramics are transparent and the in-line transmittance can reach to 76.1% at 800 nm when x=1.2. • The Gd content has effects on the crystal structure, in-line transmittance, microstructures and densities of the ceramics. • With high density (7.91~8.88 g/cm3) and effective atomic number, some of the La2-xGdxHf2O7 transparent ceramics are promising candidates for scintillator hosts.

Entrance channel dependent light-charged particle emission of the 156Er compound

International Nuclear Information System (INIS)

Liang, J.F.; Bierman, J.D.; Kelly, M.P.; Sonzogni, A.A.; Vandenbosch, R.; van Schagen, J.P.S.

1996-01-01

Light-charged particle decay from the 156 Er compound nucleus, populated by 12 C+ 144 Sm and 60 Ni+ 96 Zr at the same excitation energy, were measured in coincidence with the evaporation residues. The high energy slope of charged particle spectra for the 60 Ni-induced reaction is steeper than for the 12 C-induced reaction. Model calculations including particle evaporation during compound nucleus formation result in good agreement with the data. This suggests that the difference in the charged particle spectra between the two entrance channels is due to a longer formation time in the 60 Ni-induced reaction. 14 refs., 3 figs

Entrance channel effects and the superdeformed band in {sup 152}Dy

Energy Technology Data Exchange (ETDEWEB)

Beausang, C W; Alderson, A; Ali, I; Dagnall, P J; Fallon, P; Forsyth, P D; Smith, G; Twin, P J [Liverpool Univ. (United Kingdom); France, G de; Duchene, G; Flibotte, S; Haas, B; Romain, P; Theisen, C H; Vivien, J P [Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires; Bentley, M A [Daresbury Lab. (United Kingdom)

1992-08-01

Recent experiments on {sup 152}Dy indicate that the fraction of decays via the superdeformed (SD) band depends on the mass asymmetry in the entrance channel. Such results may indicate that the time scale for fusion is larger for mass symmetric reactions than for mass asymmetric ones, thus allowing neutron evaporation to compete better with fusion. To test this idea, one needs accurate intensity measurements of the highest member of the SD band, using a very large data set, so it is an ideal experiment for the Eurogam array. At the time of the conference, a series of experiments was being carried out using the {sup 36}S + {sup 120}Sn and {sup 82}Se + {sup 74}Ge reactions. Preliminary results were inconclusive. 7 refs., 3 figs.

Crystal structure and magnetic properties of PrCo6.8-xCuxHf0.2 compounds

International Nuclear Information System (INIS)

Luo, J; Liang, J K; Guo, Y Q; Liu, Q L; Liu, F S; Yang, L T; Zhang, Y; Rao, G H

2004-01-01

The effects of Cu substitution on the crystal structure and magnetic properties of PrCo 6.8-x Cu x Hf 0.2 (x = 0-1.0) compounds were investigated by means of x-ray powder diffraction and magnetic measurements. The as-cast PrCo 6.8-x Cu x Hf 0.2 compounds crystallize in the TbCu 7 -type structure with the space group P6/mmm. The Curie temperature and magnetic anisotropy field decrease with increasing Cu content. A spin reorientation behaviour has been observed in the PrCo 6.8-x Cu x Hf 0.2 compounds. The addition of Cu weakens the anisotropy of the Co sublattice, leading to an increase in the spin reorientation temperature with increasing content of Cu

A Computer Program Method for Estimation of Entrance Skin Dose for some Individuals Undergoing X-ray Imaging

International Nuclear Information System (INIS)

Taha, T.M.; Allehyani, S.

2012-01-01

A computer program depends on practical measurements of entrance skin dose patients undergoing radiological examinations. Physical parameters such as field size, half value layer, backscatter factor, dose output, focal film distance, focal skin distance, normal operating conditions were taken into consideration for calculation entrance skin dose. It was measured by many techniques such as Thermo-luminescence dosimeters, ionization chambers. TLD technique characterized by high precision and reproducibility of dose measurement is checked by addressing pre-readout annealing, group sorting, dose evaluation, Fifty TLD chips were annealed for 1 hour at 400 degree C followed by 2 h at 100 degree C. After exposure to constant dose from X-ray generator. 0.6 cc Ionization chamber was located at surface of water chest phantom that has dimensions of 40 cm x 40 cm x 20 cm and connected with farmer dose master. Entrance Skin Dose was calculated using the generated software by changing the physical parameters and using the measured output doses. The obtained results were compared with the reference levels of International Atomic Energy Authority. The constructed computer program provides an easy and more practical mean of estimating skin dose even before exposure. They also provide the easiest and cheapest technique can be employed in any entrance skin dose measurement

Preequilibrium GDR excitation and entrance channel angular momentum effects

International Nuclear Information System (INIS)

Sandoli, M.; Campajola, L.; De Rosa, A.; D'Onofrio, A.; La Commara, M.; Ordine, A.; Pierroutsakou, D.; Roca, V.; Romano, M.; Romoli, M.; Terrasi, F.; Trotta, M.; Cardella, G.; Papa, M.; Pappalardo, G.; Rizzo, F.; Alamanos, N.; Auger, F.; Gillibert, A.

1997-01-01

The energy spectra of the γ-rays emitted in the 35 Cl+ 92 Mo reaction at incident energy E=260 MeV were measured in coincidence with the ejectiles produced in dissipative reaction events. The cumulative energy spectrum of the γ-rays coming from the decay of the ejectiles was calculated within the statistical model and its comparison to the experimental spectrum evidences an excess in the data for E γ =8 to 12 MeV. Such an excess, fitted with a Lorentz curve, is attributed to the preequilibrium GDR γ-decay of the intermediate dinuclear system. The centroid energy of the Lorentz curve corresponds to a dipole oscillation along the symmetry axis of the system and its width is found to be comparable to that of the ground state GDR low energy component of the deformed dinucleus. The small quantal dispersion Δl=(10.3±0.1)ℎ of the entrance channel angular momentum, determined by analysing the dissipative fragment angular distribution in the framework of the Strutinsky model, is suggested to limit the broadening of the preequilibrium GDR width. (orig.)

HF band filter bank multi-carrier spread spectrum

Energy Technology Data Exchange (ETDEWEB)

Laraway, Stephen Andrew; Moradi, Hussein; Farhang-Boroujeny, Behrouz

2015-10-01

Abstract—This paper describes modifications to the filter bank multicarrier spread spectrum (FB-MC-SS) system, that was presented in [1] and [2], to enable transmission of this waveform in the HF skywave channel. FB-MC-SS is well suited for the HF channel because it performs well in channels with frequency selective fading and interference. This paper describes new algorithms for packet detection, timing recovery and equalization that are suitable for the HF channel. Also, an algorithm for optimizing the peak to average power ratio (PAPR) of the FBMC- SS waveform is presented. Application of this algorithm results in a waveform with low PAPR. Simulation results using a wide band HF channel model demonstrate the robustness of this system over a wide range of delay and Doppler spreads.

Surface characteristics of hydroxyapatite-coated layer prepared on nanotubular Ti–35Ta–xHf alloys by EB-PVD

Energy Technology Data Exchange (ETDEWEB)

Jeong, Yong-Hoon [Department of Dental Materials and Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Moon, Byung-Hak [Department of Dental Materials and Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials and Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, Columbus, OH (United States)

2013-12-31

In this study, we investigated the surface characteristics of hydroxyapatite (HA)-coated layers prepared by electron-beam physical vapor deposition (EB-PVD) on nanotubular Ti–35Ta–xHf alloys (x = 3, 7, and 15 wt.%). Ti–35Ta–xHf alloys were first prepared by arc melting. Formation of a nanotube structure on these alloys was achieved by an electrochemical method in 1 M H{sub 3}PO{sub 4} + 0.8 wt.% NaF electrolytes. The HA coatings were then deposited on the nanotubular surface by an EB-PVD method. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction (XRD). The electrochemical behavior was examined using a potentiodynamic polarization test in 0.9% NaCl solution. The Ti–35Ta–xHf alloys had an equiaxed grain structure with α″ + β phases, and the α″ phase disappeared with increases in Hf content. The Ti–35Ta–15Hf alloy showed higher β-phase peak intensity in the XRD patterns than that for the lower Hf-content alloys. A highly ordered nanotubular oxide layer was formed on the Ti–35Ta–15Hf alloy, and the tube length depended on Hf content. The HA coating surface formed at traces of the nanotubular titanium oxide layer and completely covered the tips of the nanotubes with a cluster shape. From the potentiodynamic polarization tests, the incorporation of Hf element and formation of the nanotubular structure were the main factors for achieving lower current density. In particular, the surface of the HA coating on the nanotubular structure exhibited higher corrosion resistance than that of the nanotubular titanium oxide structure without an HA coating. - Highlights: • Hydroxyapatite (HA) was coated on nanotubular Ti–35Ta–xHf alloys, using EB-PVD. • Increasing the Hf content reduced the relative proportion of α″ martensite to β-Ti in the microstructures. • The detailed nanotubular structure formed by anodization depended on alloy composition

Surface characteristics of hydroxyapatite-coated layer prepared on nanotubular Ti–35Ta–xHf alloys by EB-PVD

International Nuclear Information System (INIS)

Jeong, Yong-Hoon; Moon, Byung-Hak; Choe, Han-Cheol; Brantley, William A.

2013-01-01

In this study, we investigated the surface characteristics of hydroxyapatite (HA)-coated layers prepared by electron-beam physical vapor deposition (EB-PVD) on nanotubular Ti–35Ta–xHf alloys (x = 3, 7, and 15 wt.%). Ti–35Ta–xHf alloys were first prepared by arc melting. Formation of a nanotube structure on these alloys was achieved by an electrochemical method in 1 M H 3 PO 4 + 0.8 wt.% NaF electrolytes. The HA coatings were then deposited on the nanotubular surface by an EB-PVD method. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction (XRD). The electrochemical behavior was examined using a potentiodynamic polarization test in 0.9% NaCl solution. The Ti–35Ta–xHf alloys had an equiaxed grain structure with α″ + β phases, and the α″ phase disappeared with increases in Hf content. The Ti–35Ta–15Hf alloy showed higher β-phase peak intensity in the XRD patterns than that for the lower Hf-content alloys. A highly ordered nanotubular oxide layer was formed on the Ti–35Ta–15Hf alloy, and the tube length depended on Hf content. The HA coating surface formed at traces of the nanotubular titanium oxide layer and completely covered the tips of the nanotubes with a cluster shape. From the potentiodynamic polarization tests, the incorporation of Hf element and formation of the nanotubular structure were the main factors for achieving lower current density. In particular, the surface of the HA coating on the nanotubular structure exhibited higher corrosion resistance than that of the nanotubular titanium oxide structure without an HA coating. - Highlights: • Hydroxyapatite (HA) was coated on nanotubular Ti–35Ta–xHf alloys, using EB-PVD. • Increasing the Hf content reduced the relative proportion of α″ martensite to β-Ti in the microstructures. • The detailed nanotubular structure formed by anodization depended on alloy composition. • The

High temperature X-ray diffraction studies on HfO2-Gd2O3 system

International Nuclear Information System (INIS)

Panneerselvam, G.; Antony, M.P.; Ananthasivan, K.; Joseph, M.

2016-01-01

High temperature X-ray diffraction (HTXRD) technique is an important experimental tool for measuring thermal expansion of materials of interest. A series of solid solutions containing GdO 1.5 in HfO 2 ,Hf 1-y Gd y )O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out by using room temperature X-ray diffraction measurements. The room temperature lattice parameter estimated for (Hf 1-y Gd y )O 2 (y=0.15, 0.2, 0.3, 0.41 and 0.505) are 0.51714 nm, 0.51929 nm, 0.52359nm, 0.52789nm and 0.53241 nm, respectively. Thermal expansion coefficients and percentage linear thermal expansion of the HfO 2 -Gd 2 O 3 solid solutions containing 20 and 41 mol% GdO 1.5 were determined using HTXRD in the temperature range 298 to 1673K. The mean linear thermal expansion coefficients of the solid solutions containing 20 and 41 mol. %Gd are 11.65 x 10 -6 K -1 and 12.07 x 10 -6 K -1 , respectively. (author)

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfO{sub x} film

Energy Technology Data Exchange (ETDEWEB)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y., E-mail: qxy2001@swu.edu.cn [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2016-05-15

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfO{sub x} film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfO{sub x} matrix. Pt/Ni-NCs embedded HfO{sub x}/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 10{sup 12} electrons/cm{sup 2}, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 10{sup 4} cycles and excellent retention performance of 10{sup 5} s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

Science.gov (United States)

Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

2018-03-01

Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

TaxHf1−xB2–SiC multiphase oxidation protective coating for SiC-coated carbon/carbon composites

International Nuclear Information System (INIS)

Ren, Xuanru; Li, Hejun; Fu, Qiangang; Li, Kezhi

2014-01-01

Highlights: • Ta x Hf 1−x B 2 –SiC coating was prepared on SiC coated C/C by in-situ reaction method. • TaB 2 and HfB 2 were introduced in the form of solid solution Ta x Hf 1−x B 2 . • The coating could protect C/C for 1480 h with only 0.57% mass loss at 1773 K in air. • Oxidation layer consists of out Ta–Si–O compound layer and inner SiO 2 glass layer. • Ta–Si–O compound silicate layer presents a better stability than SiO 2 glass layer. - Abstract: A Ta x Hf 1−x B 2 –SiC coating was prepared by in-situ reaction method on SiC coated C/C composites. Ta x Hf 1−x B 2 phase is the form of solid solution between TaB 2 and HfB 2 . Isothermal oxidation behavior at 1773 K and ablation behavior of the coated C/C were tested. Ta x Hf 1−x B 2 –SiC/SiC coating could protect the C/C from oxidation at 1773 K for 1480 h and ablation above 2200 K for 40 s. During oxidation, oxides of Ta and Hf atoms exist as “pinning phases” in the compound glass layer consisted of outer Ta–Si–O compound silicate layer and inner SiO 2 glass layer, which was responsible for the excellent oxidation resistance

Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

Science.gov (United States)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-10-01

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido

Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

2010-07-01

Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

Why Do Some Estuaries Close: A Model of Estuary Entrance Morphodynamics.

Science.gov (United States)

McSweeney, S. L.; Kennedy, D. M.; Rutherfurd, I.

2014-12-01

Intermittently Closed/Open Coastal Lakes/Lagoons (ICOLLs) are a form of wave-dominated, microtidal estuary that experience periodic closure in times of low river flow. ICOLL entrance morphodynamics are complex due to the interaction between wave, tidal and fluvial processes. Managers invest substantial funds to artificially open ICOLLs as they flood surrounding property and infrastructure, and have poor water quality. Existing studies examine broad scale processes but do not identify the main drivers of entrance condition. In this research, the changes in entrance geomorphology were surveyed before and after artificial entrance openings in three ICOLLs in Victoria, Australia. Changes in morphology were related to continuous measures of sediment volume, water level, tide and wave energy. A six-stage quantitative phase model of entrance geomorphology and hydrodynamics is presented to illustrate the spatio-temporal variability in ICOLL entrance morphodynamics. Phases include: breakout; channel expansion with rapid outflow; open with tidal exchange; initial berm rebuilding with tidal attenuation; partial berm recovery with rising water levels; closed with perched water levels. Entrance breakout initiates incision of a pilot channel to the ocean, whereby basin water levels then decline and channel expansion as the headcut migrates landwards. Peak outflow velocities of 5 m/s-3 were recorded and channel dimensions increased over 6 hrs to 3.5 m deep and 140 m wide. When tidal, a clear semi-diurnal signal is superimposed upon an otherwise stable water level. Deep-water wave energy was transferred 1.8 km upstream of the rivermouth with bores present in the basin. Berm rebuilding occurred by littoral drift and cross-shore transport once outflow ceased and microscale bedform features, particularly antidunes, contributed to sediment progradation. Phase duration is dependant on how high the estuary was perched above mean sea level, tidal prism extent, and onshore sediment supply

New Intermetallic Ternary Phosphide Chalcogenide AP2-xXx (A = Zr, Hf; X = S, Se) Superconductors with PbFCl-Type Crystal Structure

Science.gov (United States)

Kitô, Hijiri; Yanagi, Yousuke; Ishida, Shigeyuki; Oka, Kunihiko; Gotoh, Yoshito; Fujihisa, Hiroshi; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi

2014-07-01

We have synthesized a series of intermetallic ternary phosphide chalcogenide superconductors, AP2-xXx (A = Zr, Hf; X = S, Se), using the high-pressure synthesis technique. These materials have a PbFCl-type crystal structure (space group P4/nmm) when x is greater than 0.3. The superconducting transition temperature Tc changes systematically with x, yielding dome-like phase diagrams. The maximum Tc is achieved at approximately x = 0.7, at which point the Tc is 6.3 K for ZrP2-xSex (x = 0.75), 5.5 K for HfP2-xSex (x = 0.7), 5.0 K for ZrP2-xSx (x = 0.675), and 4.6 K for Hfp2-xSx (x = 0.5). They are typical type-II superconductors and the upper and lower critical fields are estimated to be 2.92 T at 0 K and 0.021 T at 2 K for ZrP2-xSex (x = 0.75), respectively.

Corrosion Characteristics of Ti-29Nb-xHf Ternary Alloy for Biomaterials

Energy Technology Data Exchange (ETDEWEB)

Pak, Sun Young; Choi, Han Chul [Chosun Univ., Kwangju (Korea, Republic of)

2015-12-15

The Cp-Ti and Ti-6Al-4V alloys were widely used for dental materials due to their mechanical properties and good corrosion resistance. However, Cp-Ti was known as bio-inert materials, Ti-6Al-4V alloy has a problem such as high Young modulus, potential loss of the surrounding bone, and to the release of potentially toxic ions from the alloy. To overcome this problem, Ti alloys containing Nb and Hf elements have been used for biomaterials due to low toxicity and high corrosion resistance. Especially, alloying element of Nb was known as β phase stabilizer. The β phase alloy was widely used to replace currently used implant materials. The corrosion resistances of Ti-29Nb-xHf ternary alloys were dependent on Hf content in oral environment solution.

The influence of the entrance channel mass asymmetry on the reaction mechanism

International Nuclear Information System (INIS)

Agarwal, S.; Galin, J.; Gatty, B.; Guerreau, D.; Lefort, M.; Tarrago, X.; Babinet, R.; Girard, J.

1980-01-01

We have tried to investigate the influence of the entrance channel mass asymmetry on the reaction mechanisms associated with heavy ion collisions. Two systems, one very much asymmetric (O + Mo) and the other one almost symmetric (Cr + Fe), were studied in detail by measuring evaporation residues, deep inelastic collision products and fission fragments. An important fraction of the fragments observed in the Cr + Fe system exhibits all the characteristics of fission fragments. The analysis of these data seems to indicate that these fission like products are most likely emitted by a long lived composite system having not reached full statistical equilibrium for all the degrees of freedom. As a consequence, the fusion cross section for this symmetric system is too low as compared to predictions based on a critical distance approach for fusion, whereas the asymmetric system (O + Mo) is well understood in terms of the same model. (orig.)

Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications

Science.gov (United States)

Park, Seon-Yeong; Choe, Han-Cheol

2018-02-01

In this study, Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetrons sputtering for dental applications were studied using different experimental techniques. Mn coating films were formed on Ti-29Nb-xHf alloys by a radio frequency magnetron sputtering technique for 0, 1, 3, and 5 min at 45 W. The microstructure, composition, and phase structure of the coated alloys were examined by optical microscopy, field emission scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. The microstructure of Ti-29Nb alloy showed α" phase in the needle-like structure and Ti-29Nb-15Hf alloy showed β phase in the equiaxed structure. As the sputtering time increased, the circular particles of Mn coatings on the Ti-29Nb alloy increased at inside and outside surfaces. As the sputtering time increased, [Mn + Ca/P] ratio of the plasma electrolytic oxidized films in Ti- 29Nb-xHf alloys increased. The corrosion potential (Ecorr) of Mn coatings on the Ti-29Nb alloy showed higher than that of Mn coatings on the Ti-29Nb-15Hf alloy. The passive current density (Ipass) of the Mn coating on the Ti-29Nb alloy and Mn coatings on the Ti-29Nb-15Hf alloy was less noble than the non-Mn coated Ti-29Nb and Ti-29Nb-15Hf alloys surface.

Entrance channel influence on the formation and decay of hot nuclei

International Nuclear Information System (INIS)

Harar, S.

1987-04-01

Different entrance channels have been investigated to form very hot nuclei and to study their decay properties. i) Argon and Nickel projectiles accelerated around the Fermi energy show that central collisions induce momentum transfers to target nuclei which are proportional to the mass of the projectile and not to its velocities in the studied energy range. The preequilibrium model fits nicely the experimental results. The decay properties of the fission products for hot nuclei will be presented. Both head-on collisions and peripheral massive transfers contribute to the formation of very excited nuclei. The question of the influence of the energy deposit in the composite like system in limiting their yields is discussed. ii) Investigations have been also achieved with alpha projectiles at much higher incident energy (around 1 GeV/u). It is shown that hot and thermalized nuclei are also formed even when the nucleon-nucleon collisions are predominant. A sensitive parameter of the transition from binary fission to multifragmentation seems to be the energy deposit in the target residues rather than the projectile velocity

On the Comparative Performance Analysis of Turbo-Coded Non-Ideal Sigle-Carrier and Multi-Carrier Waveforms over Wideband Vogler-Hoffmeyer HF Channels

Directory of Open Access Journals (Sweden)

F. Genc

2014-09-01

Full Text Available The purpose of this paper is to compare the turbo-coded Orthogonal Frequency Division Multiplexing (OFDM and turbo-coded Single Carrier Frequency Domain Equalization (SC-FDE systems under the effects of Carrier Frequency Offset (CFO, Symbol Timing Offset (STO and phase noise in wide-band Vogler-Hoffmeyer HF channel model. In mobile communication systems multi-path propagation occurs. Therefore channel estimation and equalization is additionally necessary. Furthermore a non-ideal local oscillator generally is misaligned with the operating frequency at the receiver. This causes carrier frequency offset. Hence in coded SC-FDE and coded OFDM systems; a very efficient, low complex frequency domain channel estimation and equalization is implemented in this paper. Also Cyclic Prefix (CP based synchronization synchronizes the clock and carrier frequency offset.The simulations show that non-ideal turbo-coded OFDM has better performance with greater diversity than non-ideal turbo-coded SC-FDE system in HF channel.

Tangential channel for nuclear gamma-resonance spectroscopy in thermal neutron capture

International Nuclear Information System (INIS)

Belogurov, V.N.; Bondars, H.Ya.; Lapenas, A.A.; Reznikov, R.S.; Senkov, P.E.

1979-01-01

Design of a tangential reactor channel which has been made to replace the radial one in the pulsed research reactor IRT-2000 is described. It allows to use the same hole in biological reactor schielding. Characteristics of neutron and gamma-background spectra at the excit of the channel are given and compared with analogous characteristics of the radial one. The gamma background in the tangential channel is lower than in the radial channel. The gamma spectra in the Gd 155 (n, γ)Gd 156 , Gd 157 (n, γ)Gd 158 , Er 167 (n, γ)Er 168 and Hf 177 (n, γ)Hf 178 reactions show that the application of X-ray detection units BDR with the tangential channel allows to carry out the gamma spectrometry of gamma quanta emitted in the thermal neutron capture by both high and low neutron capture cross section nuclei (e.g., Gdsup(157, 155) and Er 167 , Hf 177 , respectively)

Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

International Nuclear Information System (INIS)

Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

2009-01-01

We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

Study of the gamma emission from the 31-year isomer of 178Hf induced by X-ray irradiation

International Nuclear Information System (INIS)

Collins, C.B.; Davanloo, F.; Iosif, M.C.

1999-01-01

A sample containing 6.3x10 14 nuclei of the 16 + isomer of 178 Hf having a half-life of 31 years and excitation energy of 2.446 MeV was irradiated with x-ray pulses derived from a device operated at 15mA to produce Bremsstrahlung radiation with an end point energy set to be 90 keV. Gamma-spectra of the isomeric target were taken with a Ge-detector. Intensity of the 325.5 keV (6 + →4 + transition in the ground state band of 178 Hf was found to increase by about 2%. Such an accelerated decay of the 178 Hf isomer is consistent with an integrated cross section of 3x10 -23 cm 2 ·keV if the resonant absorption takes place within the energy ranges corresponding to the maxima of the x-ray flux, either near 20 keV, or at the K emission lines of W

Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

KAUST Repository

Gandi, Appala; Schwingenschlö gl, Udo

2017-01-01

We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address

Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

2016-04-18

The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

Science.gov (United States)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

From Surface Down To Bulk X-Ray Channeling

International Nuclear Information System (INIS)

Dabagov, Sultan B.

2003-01-01

The basic point to be considered in this report is that X-ray capillary optics relies on the ability of a tapered and/or bent capillary channel to act as an X-ray waveguide. Recently several coherent phenomena associated with propagation of X-rays in capillary optical elements have been observed. In order to describe coherent phenomena of radiation propagation a quantum-wave theory of X-ray channeling was developed. Simple estimations speak on possibility of X-ray channeling in nano-scale capillaries, but with a significant change in character of channeling. In this connection, discovery of carbon nanotubes opens new opportunities to apply capillary waveguide optics. X-ray propagation in capillary micro- and nanostructures within the frame of wave approach will be discussed

GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

2016-07-11

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

La temperatura de transición en SrxBa1-xHfO3

Directory of Open Access Journals (Sweden)

López-García, A.

2002-02-01

Full Text Available In this contribution the transition temperature TC to the cubic phase in SrxBa1-xHfO3 compounds with x = 0.12, 0.25, 0.50, 0.75 and 0.88 is presented. These temperatures were deduced from the measurements of the perturbed angular correlation on tantalum probes. The purpose of this work is to study how the Sr substitution by Ba affect this temperature. The oxides BaHfO3 and SrHfO3 have at RT cubic and orthorhombic structures, respectively. The Sr-compound transform from tetragonal to cubic at TC1 ≈ 1400. From TC2 ≈ 1000K and up to TC1 the oxygen octahedra are tilted and the tilt angle decreases steadily as T approaches TC1. This rotation is originated by the interaction of strontium with oxygen because the Sr ionic radius (rSr ≈ 1.13 Å allows to be closer than Ba (rBa ≈ 1.35 Å. Then in SrxBa1-xHfO3 compounds a competition between the Ba-O interaction, 2.9502 Å apart and Sr-O interaction at a distance of 2.9098 Å in their respective pure compounds, is established.En este trabajo se presenta las temperaturas de transición TC a la estructura cúbica, en la familia de compuestos SrXBa1-XHfO3 donde x es igual a 0.12, 0.25, 0.50, 0.75 y 0.88, determinadas por medidas de la Correlación Angular Perturbada y usando al tantalio como sonda. El interés es estudiar como la sustitución de estroncio por bario modifica dicha temperatura. El BaHfO3 es cúbico a temperatura ambiente. En cambio, el SrHfO3 presenta una transición estructural de tetragonal a cúbica cuando TC1 ≈ 1400 K. Por debajo de esta temperatura y hasta TC2 ≈ 1000 K los octaedros de oxígeno están rotados uno con respecto al consecutivo, en un ángulo φ alrededor del eje z de la red tetragonal que disminuye a cero a medida que T→TC. Esta rotación está relacionada con la interacción del estroncio con el oxígeno, ya que el radio iónico del catión rSr (≈ 1.13 Å permite un mayor acercamiento entre ambos que el bario al oxígeno, pues rBa (≈ 1.35 Å. Entonces, en

Structure of 3 at.% and 9 at.% Si-doped HfO{sub 2} from combined refinement of X-ray and neutron diffraction patterns

Energy Technology Data Exchange (ETDEWEB)

Zhao, Lili [Department of Materials Science and Engineering, North Carolina State University, NC 27695 (United States); School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Hou, Dong; Usher, Tedi-Marie; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S. [Department of Materials Science and Engineering, North Carolina State University, NC 27695 (United States); Nishida, Toshikazu [Department of Electrical and Computer Engineering, University of Florida, FL 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, FL 32611 (United States); Jones, Jacob L., E-mail: jacobjones@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, NC 27695 (United States)

2015-10-15

The crystal structure of 3 at.% and 9 at.% Si-doped HfO{sub 2} powder was determined through refinements using X-ray and neutron diffraction patterns. The lattice parameters, atomic positions, dopant occupancy, and the second phase fraction were determined with high precision using a combined full pattern fitting via the Rietveld method. The results show that both 3 at.% and 9 at.% Si-doped HfO{sub 2} powder exhibit the monoclinic crystal structure with P 1 2{sub 1}/c 1 space group. Through the combined refinement, the crystal structure parameters, especially for the positions and occupancies of the lighter atoms, were more precisely determined compared to independent X-ray diffraction refinement. Although the ionic radius of Si{sup 4+} is smaller than Hf{sup 4+}, with increasing Si occupancy, the unit cell volume slightly increases; possible mechanisms for this effect are discussed. Moreover, the refined results provide evidence of the existence of a non-equilibrium phase of Hf{sub x}Si{sub 1−x}O{sub 2}. The second phase (SiO{sub 2}) fraction is determined as 0.17 at.% for 3 at.% Si-doped HfO{sub 2} powders and 1.7 at.% for 9 at.% Si-doped HfO{sub 2} powders. - Highlights: • X-ray and neutron diffraction patterns were used to determine crystal structure. • Results from independent refinements and a combined refinement were compared. • Highly precise structural parameters were obtained by the combined refinement. • Structural data of 3 at.% and 9 at.% Si-doped HfO{sub 2} are provided. • The unit cell volume slightly increases with Si concentration from 3 to 9 at.%.

Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

International Nuclear Information System (INIS)

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

2006-01-01

Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

Very large phase shift of microwave signals in a 6 nm Hf x Zr1-x O2 ferroelectric at ±3 V

Science.gov (United States)

Dragoman, Mircea; Modreanu, Mircea; Povey, Ian M.; Iordanescu, Sergiu; Aldrigo, Martino; Romanitan, Cosmin; Vasilache, Dan; Dinescu, Adrian; Dragoman, Daniela

2017-09-01

In this letter, we report for the first time very large phase shifts of microwaves in the 1-10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1-x O2 ferroelectric grown directly on a high resistivity silicon substrate. The phase shift is larger than 60° at 1 GHz and 13° at 10 GHz at maximum applied DC voltages of ±3 V, which can be supplied by a simple commercial battery. In this way, we demonstrate experimentally that the new ferroelectrics based on HfO2 could play an important role in the future development of wireless communication systems for very low power applications.

Estudio de aleaciones amorfas Hf_1-x Cu_x mediante correlaciones angulares perturbadas

OpenAIRE

Damonte, Laura Cristina

1988-01-01

Con la intención de contribuir a un mejor entendimiento de la estructura atómica local en aleaciones del tipo MT-MT, en este trabajo de tesis se realiza un estudio, mediante la aplicación de la técnica TDPAC, sobre aleaciones amorfas Hf1-x Cux (x=0.33, 0.44, 0.50, 0.59) y sus contrapartes cristalinas. Muy pocos trabajos han sido publicados sobre este sistema. El objetivo general de este trabajo es analizar el orden local en estas aleaciones, su evolución con tratamientos térmicos (r...

Measurement and monitoring of entrance exposure dose rate in X-ray image intensifier television with dose rate control

Energy Technology Data Exchange (ETDEWEB)

Klein, J [Bezirkskrankenhaus Brandenburg (German Democratic Republic)

1981-03-01

For X-ray image intensifier television operation very low entrance dose rates (about 5.2 nA/kg) are stated and demanded, respectively. These required values are often manifold exceeded in practice so that a check seems to be necessary. It is shown and proved how these measurements can be performed with simple, generally available means of measurement in the radiological practice. For ZnCdS-image intensifiers should be considered that about 13 nA/kg for the large entrance size are not to be exceeded; for the CsI type lower values (factor 1.5) are practicable because of the twofold quantum absorption efficiency. Furthermore, some tests for a semiquantitative function check of the automatic dose rate control are proposed.

Modeling of anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene metal-oxide semiconductor field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Chang, Jiwon [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

2015-06-07

Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS{sub 2} is comprehensively analyzed. Benchmarking monolayer HfS{sub 2} with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS{sub 2} than in phosphorene due to the degenerate CB valleys of monolayer HfS{sub 2}. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS{sub 2} MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS{sub 2} MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

The rotational excitation of HF by H

Science.gov (United States)

Desrousseaux, Benjamin; Lique, François

2018-06-01

The HF molecule is a key tracer of molecular hydrogen in diffuse interstellar medium (ISM). Accurate modelling of the HF abundance in such media requires one to model its excitation by both radiation and collisions. In diffuse ISM, the dominant collisional partners are atomic and molecular hydrogen. We report quantum time-independent calculations of collisional cross-sections and rate coefficients for the rotational excitation of HF by H. The reactive hydrogen exchange channels are taken into account in the scattering calculations. For the first time, HF-H rate coefficients are provided for temperature ranging from 10 to 500 K. The strongest collision-induced rotational HF transitions are those with Δj = 1, and the order of magnitude of the new HF-H rate coefficients is similar to that of the HF-H2 ones previously computed. As a first application, we simulate the excitation of HF by both H and H2 in typical diffuse ISM. We show that, depending on the rotational transition, hydrogen atoms increase or decrease the simulated excitation temperatures compared to collisional excitation only due to H2 molecules. Such results suggest that the new HF-H collisional data have to be used for properly modelling the abundance of HF in diffuse ISM.

Perturbed angular correlation study of {sup 181}Ta-doped PbTi{sub 1-x}Hf{sub x}O{sub 3} compounds

Energy Technology Data Exchange (ETDEWEB)

Alonso, R.E., E-mail: alonso@fisica.unlp.edu.ar [Instituto de Fisica La Plata, CONICET (Argentina); Facultad de Ingenieria, Universidad Nacional de La Plata, CC-67, CP 1900 La Plata (Argentina); Lopez Garcia, A.R. [Instituto de Fisica La Plata, CONICET (Argentina); Rubia, M.A. de la [Departamento de Electroceramica, Instituto de Ceramica y Vidrio (CSIC), Kelsen 5, 28040 Madrid (Spain); Departamento de Fisica Aplicada a las Tecnologias de la Informacion, ETSI Telecomunicacion (UPM), Ciudad Universitaria s/n 28040 Madrid (Spain); De Frutos, J. [Departamento de Fisica Aplicada a las Tecnologias de la Informacion, ETSI Telecomunicacion (UPM), Ciudad Universitaria s/n 28040 Madrid (Spain)

2012-07-01

In this work, the hyperfine quadrupole interaction at Ta-doped PbTi{sub 1-x}Hf{sub x}O{sub 3} polycrystalline samples is studied for the first time. Powders with x=0.25, 0.50 and 0.75 were prepared and characterized by X-ray diffraction analysis. Perturbed Angular Correlation (PAC) analyses were done as a function of temperature, using low concentration {sup 181}Ta nuclei as probes. In the ferroelectric and paraelectric phases of these compounds two sites were occupied by the probes. For each site the quadrupole frequency, asymmetry and relative distribution width parameters were obtained as a function of temperature above and below the Curie temperature (T{sub C}). One of these sites was assigned to the regular Ti-Hf site, while the other one was assigned to some kind of defect. The behavior of the hyperfine parameters as a function of temperature was analyzed in terms of a recent published phase diagram and the presence of disorder below and above T{sub C}. For the three compositions measured, the obtained hyperfine parameters present discontinuities which correspond to the ferroelectric-paraelectric phase transition. In both phases it was found broad frequency distributed interactions. The disorder in the electronic distribution would be responsible for the broad line width of the hyperfine interaction.

Mid-Latitude Mobile Wideband HF- NVIS Channel Analysis: Part 1

Science.gov (United States)

2017-09-14

commercial satellite communications (SATCOM) for beyond line-of-sight (LOS) links. However, standard HF systems operating over a 3-kHz bandwidth do not...citation of trade names and names of names of manufacturers is not to be construed as official government endorsement or approval of commercial ...Division EXECUTIVE SUMMARY High frequency (HF) links (2 to 30 MHz) are an alternative to the cost and tactical fragility of commercial satellite

OH vibrational activation and decay dynamics of CH4-OH entrance channel complexes

International Nuclear Information System (INIS)

Wheeler, Martyn D.; Tsiouris, Maria; Lester, Marsha I.; Lendvay, Gyoergy

2000-01-01

Infrared spectroscopy has been utilized to examine the structure and vibrational decay dynamics of CH 4 -OH complexes that have been stabilized in the entrance channel to the CH 4 +OH hydrogen abstraction reaction. Rotationally resolved infrared spectra of the CH 4 -OH complexes have been obtained in the OH fundamental and overtone regions using an IR-UV (infrared-ultraviolet) double-resonance technique. Pure OH stretching bands have been identified at 3563.45(5) and 6961.98(4) cm-1 (origins), along with combination bands involving the simultaneous excitation of OH stretching and intermolecular bending motions. The infrared spectra exhibit extensive homogeneous broadening arising from the rapid decay of vibrationally activated CH 4 -OH complexes due to vibrational relaxation and/or reaction. Lifetimes of 38(5) and 25(3) ps for CH 4 -OH prepared with one and two quanta of OH excitation, respectively, have been extracted from the infrared spectra. The nascent distribution of the OH products from vibrational predissociation has been evaluated by ultraviolet probe laser-induced fluorescence measurements. The dominant inelastic decay channel involves the transfer of one quantum of OH stretch to the pentad of CH 4 vibrational states with energies near 3000 cm-1. The experimental findings are compared with full collision studies of vibrationally excited OH with CH 4 . In addition, ab initio electronic structure calculations have been carried out to elucidate the minimum energy configuration of the CH 4 -OH complex. The calculations predict a C 3v geometry with the hydrogen of OH pointing toward one of four equivalent faces of the CH 4 tetrahedron, consistent with the analysis of the experimental infrared spectra. (c) 2000 American Institute of Physics

Superconducting nitride halides MNX (M = Ti, Zr, Hf; X = Cl, Br, I)

Energy Technology Data Exchange (ETDEWEB)

Schurz, Christian M.; Shlyk, Larysa; Schleid, Thomas; Niewa, Rainer [Stuttgart Univ. (Germany). Inst. fuer Anorganische Chemie

2011-07-01

Two different polymorphs of the metal nitride halides MNX (M = Ti, Zr, Hf; X = Cl, Br, I) are known to crystallize in layered structures. The two crystal structures differ in the way {sub {infinity}}{sup 2}{l_brace}X[M{sub 2}N{sub 2}]X{r_brace} slabs are stacked along the c-axes. Metal atoms and/or organic molecules can be intercalated into the van-der-Waals gap between these layers. After such an electron-doping via intercalation the prototypic band insulators change into superconductors with moderate high critical temperatures T{sub c} up to 25.5 K. This review gathers information on synthesis routes, structural characteristics and properties of the prototypic nitride halides and the derivatives after electron-doping with a focus on superconductivity. (orig.)

Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

Energy Technology Data Exchange (ETDEWEB)

Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

2014-08-15

The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

Investigation of HF-plasma-treated soft x-ray optical elements

Science.gov (United States)

Eggenstein, F.; Krivenkov, M.; Rudolph, I.; Sertsu, M. G.; Sokolov, A.; Varykhalov, A.; Wolf, J.; Zeschke, T.; Schäfers, F.

2017-09-01

The contamination of optical elements (mirrors and gratings) with carbon still is an issue when using soft x-ray synchrotron radiation. With an in-house developed HF-plasma treatment we are able to decontaminate our optics in-situ from carbon very efficiently. The cleaning device, a simple Al-antenna, is mounted in situ inside the mirror- and grating vacuum chambers. A systematic study of the HF-plasma cleaning efficiency was performed acquired with in-situ and exsitu methods for monitoring: An atomic force microscope (AFM) and a scanning tunneling microscope (STM) were used before and after the cleaning process to determine the surface morphology and roughness. Reflectivity angular scans using the reflectometer at the BESSY-II Metrology Station [1-3] allowed to estimate the thickness of the remaining Clayer after different cleaning steps and thereby helped us to determine the etching rate. Reflection spectra measurements in the range of 200 eV - 900 eV show the complete removal of Carbon from the optics without contaminating it with any other elements due to the plasma treatment. The data show that the plasma process improves the reflectivity and reduces the roughness of the surface. In addition to that, the region of the optical surface where the carbon has been removed becomes passivated.

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

He, G.; Chen, X.F.; Lv, J.G.; Fang, Z.B.; Liu, Y.M.; Zhu, K.R.; Sun, Z.Q.; Liu, M.

2015-01-01

Highlights: • Band offsets in HfTiO/InGaZnO 4 heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE v ) of sputter deposited HfTiO/InZnGaO 4 (IGZO) heterostructures. A ΔE v value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure

Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

Science.gov (United States)

Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

2016-10-01

In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

Entrance channel dependence in the population of the superdeformed bands in {sup 191}Hg and a model for the feeding mechanism

Energy Technology Data Exchange (ETDEWEB)

Lauritsen, T; Soramel, F; Khoo, T L; Janssens, R V.F.; Ahmad, I; Carpenter, M P; Liang, Y [Argonne National Lab., IL (United States); Fornal, B; Bearden, I; Benet, Ph; Daley, P; Grabowski, Z W; Maier, R [Purdue Univ., Lafayette, IN (United States); Ye, D; Garg, U; Reviol, W [Notre Dame Univ., IN (United States); Drigert, M W [Idaho National Engineering Lab., Idaho Falls, ID (United States)

1992-08-01

The population of the superdeformed bands in {sup 191} Hg has been measured for two reactions with different mass asymmetry. No entrance channel effect was observed, in contrast to similar measurements in the A=150 region. To further elucidate this problem, the entry distribution for the superdeformed band in {sup 192}Hg was measured and a monte Carlo model for the feeding was developed. The simulations suggest that the decision on trapping in the superdeformed well is made at the barrier between the normal and superdeformed wells rather than at the entry point. (author). 9 refs., 3 figs.

Study of the La-related dipole in TiN/LaO{sub x}/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Energy Technology Data Exchange (ETDEWEB)

Boujamaa, R. [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); CEA-LETI, MINATEC Campus, F38054 Grenoble (France); Laboratoire des Matériaux et du Génie Physique, CNRS, Grenoble INP, 3 parvis L. Néel, BP 257, 38016 Grenoble (France); Martinez, E.; Pierre, F.; Renault, O. [CEA-LETI, MINATEC Campus, F38054 Grenoble (France); Detlefs, B.; Zegenhagen, J. [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38000 Grenoble (France); Baudot, S. [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); Gros-Jean, M., E-mail: Mickael.Gros-Jean@st.com [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); Bertin, F. [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); Dubourdieu, C., E-mail: Catherine.Dubourdieu@ec-lyon.fr [Institut des Nanotechnologies de Lyon, CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France)

2015-04-30

Highlights: • Precise La depth distribution in gate stacks before and after annealing by MEIS. • Analysis by HAXPES of the buried high K/SiO{sub 2} interface without removing TiN gate. • Formation of La-silicate at the HfSiON/SiON interface. • Internal electrical field induced at the HfSiON/SiON interface by the La diffusion. • Increase of electric field strength with initial LaO{sub x} thickness. - Abstract: In this paper, we report the effect of high temperature annealing on the chemical and electronic structure of technologically relevant TiN/LaO{sub x}/HfSiON/SiON/Si gate stacks. Using medium energy ion scattering from the backside of the samples, a non-destructive compositional depth profile of La has been obtained, revealing the lanthanum diffusion in the SiON interface layer upon annealing. To complement this analysis, hard X-ray photoelectron spectroscopy with synchrotron radiation has been performed to investigate the chemical and electronic structure of the gate stacks. The results show clear changes in the Hf and Ti core level energy positions with respect to Si bulk, with changes in the thickness of the LaO{sub x} capping layer. We infer that La diffusion generates an internal electrical field at the La-silicate interface between HfSiON and SiON, and that its strength increases with the increase of LaO{sub x} thickness. These findings support the band alignment model based on a La-induced interfacial dipole.

Influence of the entrance channel in the fusion reaction 318 MeV 74Ge+74Ge

International Nuclear Information System (INIS)

Zhu, L.H.; Cinausero, M.; Angelis, G. de; De Poli, M.; Fioretto, E.; Gadea, A.; Napoli, D.R.; Prete, G.; Lucarelli, F.

1998-01-01

Entrance channel effects in the fusion of heavy ions have been studied by using the 74 Ge+ 74 Ge reaction at 318 MeV. The population of the yrast superdeformed band in 144 Gd shows an increase when compared with the results obtained in the more asymmetric 48 Ti+ 100 Mo reaction at 215 MeV. The relative yields of the different evaporation residues produced in the 74 Ge+ 74 Ge and in the 48 Ti+ 100 Mo reactions are very similar, with the exception of the 145,144 Gd residual nuclei (3n and 4n decay channels) which are populated with a larger yield in the symmetric reaction. Statistical model calculations reproduce qualitatively such effect if a fission delay is explicitly taken into account. Effects related to fusion barrier fluctuations seem to be important in determining the spin distributions of the compound nucleus. The spectra of the high energy γ-rays emitted in the 74 Ge+ 74 Ge reaction have been measured as a function of the γ-ray multiplicity as well as in coincidence with selected evaporation residues. They are reproduced by standard statistical model calculations with GDR parameters taken from systematics, demonstrating that, in agreement with dynamical model prediction, the emission of γ-rays from the dinucleus formed in the earlier stage of the collision is unimportant. (orig.)

STM/STS measurements of the layered superconductor β-HfNCl1-x

International Nuclear Information System (INIS)

Ekino, Toshikazu; Sugimoto, Akira; Shohara, Kazuhiro; Yamanaka, Shoji; Gabovich, Alexander M.

2010-01-01

Scanning tunneling microcopy/spectroscopy (STM/STS) measurements have been carried out on SmSI (β) type HfNCl 1-x (x∼0.3) samples with T c =24K. The STM image on the cleaved surface of ab plane at 5 K clearly reveals a triangular arrangement of bright spots. The separation of the nearest-neighbor spots, 0.369 nm, is in agreement with the a lattice parameter. The STS measurements at 5 K reveal almost constant gap values 2Δ=20meV within the area of at least 10x10nm 2 , thus demonstrating a huge ratio 2Δ/k B T c =10. This ratio is very similar to that found in high-T c oxide and organic superconductors.

Efficient UV-emitting X-ray phosphors: octahedral Zr(PO4)6 luminescence centers in potassium hafnium-zirconium phosphates K2Hf1-xZrx(PO4)2 and KHf2(1-x)Zr2x(PO4)3

International Nuclear Information System (INIS)

Torardi, C.C.; Miao, C.R.; Li, J.

2003-01-01

Potassium hafnium-zirconium phosphates, K 2 Hf 1-x Zr x (PO 4 ) 2 and KHf 2(1-x) Zr 2x (PO 4 ) 3 , are broad-band UV-emitting phosphors. At room temperature, they have emission peak maxima at approximately 322 and 305 nm, respectively, under 30 kV peak molybdenum X-ray excitation. Both phosphors demonstrate luminescence efficiencies that make them up to ∼60% as bright as commercially available CaWO 4 Hi-Plus. The solid-state and flux synthesis conditions, and X-ray excited UV luminescence of these two phosphors are discussed. Even though the two compounds have different atomic structures, they contain zirconium in the same active luminescence environment as that found in highly efficient UV-emitting BaHf 1-x Zr x (PO 4 ) 2 . All the three materials have hafnium and zirconium in octahedral coordination via oxygen-atom corner sharing with six separate PO 4 tetrahedra. This octahedral Zr(PO 4 ) 6 moiety appears to be an important structural element for efficient X-ray excited luminescence, as are the edge-sharing octahedral TaO 6 chains for tantalate emission

Performance Analysis of HF Band FB-MC-SS

Energy Technology Data Exchange (ETDEWEB)

Hussein Moradi; Stephen Andrew Laraway; Behrouz Farhang-Boroujeny

2016-01-01

Abstract—In a recent paper [1] the filter bank multicarrier spread spectrum (FB-MC-SS) waveform was proposed for wideband spread spectrum HF communications. A significant benefit of this waveform is robustness against narrow and partial band interference. Simulation results in [1] demonstrated good performance in a wideband HF channel over a wide range of conditions. In this paper we present a theoretical analysis of the bit error probably for this system. Our analysis tailors the results from [2] where BER performance was analyzed for maximum ration combining systems that accounted for correlation between subcarriers and channel estimation error. Equations are give for BER that closely match the simulated performance in most situations.

X-ray generation in an ion channel

International Nuclear Information System (INIS)

Kostyukov, I.; Kiselev, S.; Pukhov, A.

2003-01-01

X-ray generation by relativistic electrons in an ion channel is studied. The emission process is analyzed in the regime of high harmonic generation when the plasma wiggler strength is large. Like for the conventional free electron laser, the synchrotron-like broadband spectrum is generated in this regime. An asymptotic expression for the radiation spectrum of the spontaneous emission is derived. The radiation spectrum emitted from an axisymmetric monoenergetic electron beam is analyzed. The stimulated emission in the ion channel is studied and the gain of the ion-channel synchrotron-radiation laser is calculated. It is shown that the use of laser-produced ion channels leads to a much higher power of x-ray radiation than the one in a self-generated channel. In addition, the mean photon energy, the number of emitted photons and the brilliance of the photon beam increase dramatically. Three-dimensional particle-in-cell simulations of a 25-GeV electron bunch propagating in a laser-produced ion channel are made. Several GeV γ-quants are produced in a good agreement with the analytical results

Low temperature formation of higher-k cubic phase HfO{sub 2} by atomic layer deposition on GeO{sub x}/Ge structures fabricated by in-situ thermal oxidation

Energy Technology Data Exchange (ETDEWEB)

Zhang, R., E-mail: zhang@mosfet.t.u-tokyo.ac.jp [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S. [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-02-01

We have demonstrated a low temperature formation (300 °C) of higher-k HfO{sub 2} using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO{sub x} interfacial layer. It is found that the cubic phase is dominant in the HfO{sub 2} film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO{sub 2} film on a 1-nm-thick GeO{sub x} form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO{sub 2} can be induced by the formation of six-fold crystalline GeO{sub x} structures in the underlying GeO{sub x} interfacial layer.

PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKAN MIXER SETTLER

Directory of Open Access Journals (Sweden)

Dwi Biyantoro

2017-01-01

Full Text Available ABSTRAK PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKANMIXER SETTLER. Telah dilakukan pemisahanZr – Hf secara sinambung menggunakan pengaduk pengenap (mixer settler 16 stage. Larutan umpan adalah zirkon nitrat dengan kadar Zr = 30786 ppm dan Hf = 499 ppm. Ekstraktan dipakai adalah solven 60 % TBP dalam kerosen dan larutan scrubbingyang dipakai adalah asam nitrat 1 M. Umpan masuk pada stageke 5 dikontakkan secara berlawanan arah dengan solven masuk pada stage ke 16 dan larutan scrubbing masuk pada stage ke 1. Tujuan penelitian ini adalah memisahkan unsur Zr dan Hf dari hasil olah pasir zirkon menggunakan solven TBP dengan alat mixer settler16 stage. Analisis umpan dan hasil proses pemisahan untuk zirkonium (Zr dilakukan dengan menggunakan alat pendar sinar-X, sedangkananalisis unsur hafnium (Hf menggunakan Analisis Pengaktifan Neutron (APN. Parameter penelitian dilakukan dengan variasi keasaman asam nitrat dalam umpan dan variasi waktu pada berbagai laju pengadukan. Hasil penelitian pemisahan unsur Zr dengan Hf diperolehkondisi optimum pada keasaman umpan 4 N HNO3, keseimbangan dicapai setelah 3jam dan laju pengadukan 3300 rpm. Hasil ekstrak  unsur zirkon (Zr diperoleh kadar sebesar 28577 ppm dengan efisiensi 92,76 % serta kadar pengotor hafnium (Hf sebesar 95 ppm. Kata Kunci: pemisahan Zr, Hf, ekstraksi, mixer settler, alat pendar sinar-X, APN. ABSTRACT SEPARATION of Zr - Hf CONTINUOUSLY USE THE MIXER SETTLER. Separation of Zr - Hf continuously using mixer settler 16 stage has been done. The feed solution is zircon nitrate concentration of Zr = 30786 ppm  and Hf = 499 ppm. As the solvent used extractant 60 % TBP in 40 % kerosene. Nitric acid solution used srubbing 1 M. The feed entered into stage to 5 is contacted with solvents direction on the stage to 16 and the scrubbing solution enter the stage to 1. The purpose of this study is to separate Zr and Hf of the results from the process of zircon sand using solvent TBP using 16 stage

Band offsets in HfTiO/InGaZnO{sub 4} heterojunction determined by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China); Fang, Z.B., E-mail: csfzb@usx.edu.cn [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Liu, Y.M.; Zhu, K.R.; Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2015-09-05

Highlights: • Band offsets in HfTiO/InGaZnO{sub 4} heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE{sub v}) of sputter deposited HfTiO/InZnGaO{sub 4} (IGZO) heterostructures. A ΔE{sub v} value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure.

Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

2010-05-31

Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

Development of Cu-Hf-Al ternary systems and tungsten wire/particle reinforced Cu48Hf43Al9 bulk metallic glass composites for strengthening

International Nuclear Information System (INIS)

Park, Joyoung; An, Jihye; Choi-Yim, Haein

2010-01-01

Stable bulk glass forming alloys can be developed over a wide range of compositions in Cu-Hf-Al ternary systems starting from the Cu 49 Hf 42 Al 9 bulk metallic glass. Ternary Cu-Hf-Al alloys can be cast directly from the melt into copper molds to form fully amorphous strips with thicknesses of 1 to 6 mm. The maximum critical diameter of the new Cu-Hf-Al ternary alloy was 6 mm. X-ray diffraction patterns were used to confirm the amorphous nature of the ternary Cu-Hf-Al alloys. To increase the toughness of these metallic glasses, we reinforced the Cu 48 Hf 43 Al 9 bulk metallic glass-forming liquid with a 50% volume fraction of tungsten particles and an 80% volume fraction of tungsten wires with diameters of 242.4 μm. Composites with a critical diameter of 7 mm and length 70 mm were synthesized. The structure of the composites was confirmed by using X-ray diffraction (XRD), and the scanning electron microscopy (SEM). The mechanical properties of the composites were studied in compression tests. The thermal stability and the crystallization processes of the Cu-Hf-Al alloys and composites were investigated by using differential scanning calorimetry (DSC). Values of the glass transition temperature (T g ), the crystallization temperature (T x ), and the supercooled liquid region (ΔT = T x - T g ) are given in this paper.

Study of Direct-Contact HfO2/Si Interfaces

Directory of Open Access Journals (Sweden)

Noriyuki Miyata

2012-03-01

Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

Entrances and entrance halls of residential buildings in Belgrade: 1918-1941

Directory of Open Access Journals (Sweden)

Putnik Vladana

2015-01-01

Full Text Available Between the two world wars Belgrade saw a surge in housing construction, including many rental apartment buildings, so-called 'luxury city palaces'. In addition to richly decorated street façades in the style of academism, eclecticism and Art Deco, architects paid much attention to the design of entrances and entrance halls. The entrance frequently was the main element of the façade even in buildings in a moderate modernist style. Since this aspect of architectural design is scantily documented, this paper seeks to identify its main trends in the 1920s and 1930s and to establish a typology of entrances and entrance halls of residential buildings. It also outlines the parameters and social circumstances that played a role in giving special attention to this element of residential buildings, and examines whether Belgrade architects pursued a sort of total design inspired by European models.

Electric field gradients at 181Ta sites in HfOx

International Nuclear Information System (INIS)

Darriba, G.N.; Rodriguez, A.M.; Saitovitch, H.; Silva, P.R.J.; Pasquevich, A.F.

2007-01-01

In the present work we report preliminary results about the possibility to study properties of the order-disorder transition in HfO x solid solutions via the determination of the electric field gradient (EFG) at 181 Ta radioactive probes. Oxygen solution into the metal was achieved by arc melting stoichiometric amounts of metallic Hf and HfO 2 under argon atmosphere. Samples of HfO x with x=0.1 and 0.2 were prepared. Two types of samples were used for the perturbed angular correlation (PAC) experiments by doping alternatively with 181 Ta, by neutron irradiation, the metallic Hf or the hafnium oxide. The PAC results on both samples were identical, with disappearing hyperfine signals of the metal and the oxide, showing a complete diffusion of the probes independent of the way of doping. The PAC signal of the HfO x solid solution consisted in a wide distribution of EFGs due to the oxygen disorder. This scheme held even after long thermal treatments at high temperature (several days at 1273K). Annealing treatments at moderate temperature (600K) were also made. In these cases the samples were cooling at a very low rate. These results, together with those obtained by measuring samples below and above the order temperature are reported

Enthalpy of mixing of liquid Cu-Fe-Hf alloys at 1873 K

Energy Technology Data Exchange (ETDEWEB)

Agraval, Pavel; Turchanin, Mikhail [Donbass State Engineering Academy, Kramatorsk (Ukraine). Metallurgical Dept.; Dreval, Liya [Donbass State Engineering Academy, Kramatorsk (Ukraine). Metallurgical Dept.; Materials Science International Services GmbH (MSI), Stuttgart (Germany)

2016-12-15

In the ternary Cu-Fe-Hf system, the mixing enthalpies of liquid alloys were investigated at 1873 K using a high-temperature isoperibolic calorimeter. The experiments were performed along the sections x{sub Cu}/x{sub Fe} = 3/1, 1/1 at x{sub Hf} = 0-0.47 and along the section x{sub Cu}/x{sub Fe} = 1/3 at x{sub Hf} = 0-0.13. The limiting partial enthalpies of mixing of undercooled liquid hafnium in liquid Cu-Fe alloys, Δ{sub mix} anti H{sub Hf}{sup ∞}, are (-122 ± 9) kJ mol{sup -1} (section x{sub Cu}/x{sub Fe} = 3/1), (-106 ± 9) kJ mol{sup -1} (section x{sub Cu}/x{sub Fe} = 1/1), and (-105 ± 2) kJ mol{sup -1} (section x{sub Cu}/x{sub Fe} = 1/3). In the investigated composition range, the integral mixing enthalpies are sign-changing. For the integral mixing enthalpy, an analytical expression was obtained by the least squares fit of the experimental results using the Redlich-Kister-Muggianu polynomial.

Evaluation of the entrance skin dose due to paediatric chest X-rays examinations carried out at a great hospital in Rio de Janeiro city

International Nuclear Information System (INIS)

Mohamadain, K.E.M.; Azevedo, A.C.P.; Rosa, L.A.R. da; Mota, H.C.; Goncalves, O.D.; Guebel, M.R.N.

2001-01-01

A dosimetric survey in paediatric radiology is currently being carried out at the paediatric unit of a great hospital in Rio de Janeiro city, aiming the assessment of patient doses and image quality. The aim of this work was to estimate the entrance skin dose for frontal and lateral chest X-rays exposure to paediatric patients. Three examination techniques were investigated, namely PA, AP and lateral positions. For entrance skin dose evaluation, two different TL dosimeters were used, namely LiF:Mg,Ti and CaSO4:Dy. The age intervals considered were 0-1 year, 1-5 years, 5-10 years and 10-15 years. The results obtained with both dosimeters are similar and the entrance skin dose values evaluated for the different age intervals considered are compared with previous values found in Brazil and also in Europe. (author)

Assimilative model for ionospheric dynamics employing delay, Doppler, and direction of arrival measurements from multiple HF channels

Science.gov (United States)

Fridman, Sergey V.; Nickisch, L. J.; Hausman, Mark; Zunich, George

2016-03-01

We describe the development of new HF data assimilation capabilities for our ionospheric inversion algorithm called GPSII (GPS Ionospheric Inversion). Previously existing capabilities of this algorithm included assimilation of GPS total electron content data as well as assimilation of backscatter ionograms. In the present effort we concentrated on developing assimilation tools for data related to HF propagation channels. Measurements of propagation delay, angle of arrival, and the ionosphere-induced Doppler from any number of known propagation links can now be utilized by GPSII. The resulting ionospheric model is consistent with all assimilated measurements. This means that ray tracing simulations of the assimilated propagation links are guaranteed to be in agreement with measured data within the errors of measurement. The key theoretical element for assimilating HF data is the raypath response operator (RPRO) which describes response of raypath parameters to infinitesimal variations of electron density in the ionosphere. We construct the RPRO out of the fundamental solution of linearized ray tracing equations for a dynamic magnetoactive plasma. We demonstrate performance and internal consistency of the algorithm using propagation delay data from multiple oblique ionograms (courtesy of Defence Science and Technology Organisation, Australia) as well as with time series of near-vertical incidence sky wave data (courtesy of the Intelligence Advanced Research Projects Activity HFGeo Program Government team). In all cases GPSII produces electron density distributions which are smooth in space and in time. We simulate the assimilated propagation links by performing ray tracing through GPSII-produced ionosphere and observe that simulated data are indeed in agreement with assimilated measurements.

Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

International Nuclear Information System (INIS)

Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

2005-01-01

We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV

HF Interference, Procedures and Tools (Interferences HF, procedures et outils)

Science.gov (United States)

2007-06-01

the actual ambient noise floor situation. Besides these HF radio links, special units such as crisis reaction forces are using low power radios for...the origin point on the ground. For ease of arithmetic and typography , the latter option is preferable. The dipole-modelled PLT is located at x = H1

Entrance and peripheral dose measurements during radiotherapy

International Nuclear Information System (INIS)

Sulieman, A.; Kappas, K.; Theodorou, K.

2008-01-01

In vivo dosimetry of entrance dose was performed using thermoluminescent dosimeters (TLD) in order to evaluate the clinical application of the build up caps in patient dose measurements and for different treatment techniques. Peripheral dose (thyroid and skin) was measured for patients during breast radiotherapy to evaluate the probability of secondary cancer induction. TLD-100 chips were used with different Copper build up caps (for 6 MV and 15 MV photon beams from two linear accelerators. Entrance doses were measured for patients during radiotherapy course for breast, head and neck, abdomen and pelvis malignancies. The measured entrance dose for the different patients for 6 MV beams is found to be within the ±2.6% compared to the dose derived from theoretical estimation (normalized dose at D max ). The same measurements for 15 MV beams are found to be ±3 %. The perturbation value can reach up to 20% of the D max , which acts as a limitation for entrance dose measurements. An average thyroid skin dose of 3.7% of the prescribed dose was measured per treatment session while the mean skin dose breast treatment session is estimated to be 42% of D max , for both internal and external fields. These results are comparable in those of the in vivo of reported in literature. The risk of fatality due to thyroid cancer per treatment course is 3x10 -3

Evaluation of skin entrance dose imparted on pediatric patients by thorax exams

International Nuclear Information System (INIS)

Oliveira, Mercia L.; Khoury, Helen; Drexler, Guenter; GSF-National Research Center for Environment and Health, Neuherberg; Barros, Edison

2001-01-01

In this work the results of a survey of skin entrance dose imparted on pediatric patients are present. Positioning the thermo luminescence dosimeters in contact with the patient's skin, in the center of the incident X-ray beam, collected the skin entrance dose data. The patients were grouped in five age groups: infants, 1,1 to 4 years, 4,1 to 6 years, 6,1 to 10 years and older than 10 years. The results show that the average of skin entrance doses is very higher as compared to the European Community Commission reference levels and to other values found in literature. (author)

A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

International Nuclear Information System (INIS)

Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

2010-01-01

High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

On x-ray channelling in microcapillaries and nanocapillaries

CERN Document Server

Bellucci, S

2003-01-01

In this work, x-ray propagation in microsize and nanosize capillaries has been considered in the framework of a simple unified wave theory. It is shown that diminishing of the channel sizes completely changes the mode of beam transportation; that is, we obtain the transformation of surface channelling in microcapillaries to bulk channelling in nanocapillaries (nanotubes).

Performance and beam characteristics of the PANTAK THERAPAX HF225 X-ray therapy machine

Energy Technology Data Exchange (ETDEWEB)

Yiannakkaras, C; Papadopoulos, N; Christodoulides, G [Department of Medical Physics, Nicosia General Hospital, 1450 Nicosia (Cyprus)

1999-12-31

The performance and beam characteristics of the new PANTAK THERAPAX HF225 X-ray therapy machine have been measured, evaluated and discussed. Eight beam qualities within the working range of generating potentials between 50 and 225 kVp are used in our department. These beam qualities have been investigated in order to provide a data base specific to our machine. Beam Quality, Central Axis Depth Dose, Output, Relative Field Uniformity and Timer Error were investigated. (authors) 11 refs., 4 figs., 9 tabs.

Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

2013-01-01

10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

Phase1 upgrade of the CMS-HF Calorimeter

CERN Document Server

Gulmez, Erhan

2016-01-01

In this presentation, results of the Phase I upgrade of the CMS Hadron Forward Calorimeter (HF) are discussed. The CMS-HF Calorimeter was using regular PMTs. Cherenkov light produced in the quartz fibers embedded in the iron absorber was read out with the PMTs. However, occasionally, stray muons hitting the PMT windows cause Cherenkov radiation in the PMT itself and produce large signals. These large signals mimic a very high-energy particle and are tagged as important by the trigger. To reduce this problem, PMTs had to be replaced. The four-anode PMTs that were chosen have thinner windows; thereby reducing the Cherenkov radiation in the PMT window. As part of the upgrade, the read-out electronics is to be replaced so that the PMTs are read out in two channels by connecting each pair of anodes to a single channel. Information provided by these two channels will help us reject the false signals due to the stray muons since the Cherenkov radiation in the PMT window is more likely to produce a signal only in one...

Coupled-Channel Analysis of the X(3872)

International Nuclear Information System (INIS)

Coito, S.; Rupp, G.; Beveren, E. van

2010-01-01

The X(3872) is studied as an axial-vector charmonium state in the multichannel framework of the Resonance-Spectrum Expansion quark-meson model, previously applied to a variety of other puzzling mesonic resonances. Included are the open-charm pseudoscalar-vector and vector-vector channels, the most important of which is the S-wave D *0 (bar)D 0 + D *0 D 0 (bar) channel, which practically coincides with the X(3872) structure. The two free parameters of the model are tuned so as to roughly reproduce the χ c1 (3511) mass as well as the enhancement just above the D *0 (bar)D 0 /D *0 D 0 threshold. The present model is able to describe the shape of the latter data quite well. However, as no dynamical resonance pole is found, the X(3872) and X(3940) cannot be reproduced simultaneously, at this stage. A possible further improvement is discussed. (author)

Fragile X mental retardation protein controls ion channel expression and activity.

Science.gov (United States)

Ferron, Laurent

2016-10-15

Fragile X-associated disorders are a family of genetic conditions resulting from the partial or complete loss of fragile X mental retardation protein (FMRP). Among these disorders is fragile X syndrome, the most common cause of inherited intellectual disability and autism. FMRP is an RNA-binding protein involved in the control of local translation, which has pleiotropic effects, in particular on synaptic function. Analysis of the brain FMRP transcriptome has revealed hundreds of potential mRNA targets encoding postsynaptic and presynaptic proteins, including a number of ion channels. FMRP has been confirmed to bind voltage-gated potassium channels (K v 3.1 and K v 4.2) mRNAs and regulates their expression in somatodendritic compartments of neurons. Recent studies have uncovered a number of additional roles for FMRP besides RNA regulation. FMRP was shown to directly interact with, and modulate, a number of ion channel complexes. The sodium-activated potassium (Slack) channel was the first ion channel shown to directly interact with FMRP; this interaction alters the single-channel properties of the Slack channel. FMRP was also shown to interact with the auxiliary β4 subunit of the calcium-activated potassium (BK) channel; this interaction increases calcium-dependent activation of the BK channel. More recently, FMRP was shown to directly interact with the voltage-gated calcium channel, Ca v 2.2, and reduce its trafficking to the plasma membrane. Studies performed on animal models of fragile X syndrome have revealed links between modifications of ion channel activity and changes in neuronal excitability, suggesting that these modifications could contribute to the phenotypes observed in patients with fragile X-associated disorders. © 2016 The Authors. The Journal of Physiology © 2016 The Physiological Society.

Waves and tides responsible for the intermittent closure of the entrance of a small, sheltered tidal wetland at San Francisco, CA

Science.gov (United States)

Hanes, D.M.; Ward, K.; Erikson, L.H.

2011-01-01

Crissy Field Marsh (CFM; http://www.nps.gov/prsf/planyourvisit/crissy-field-marsh-and-beach.htm) is a small, restored tidal wetland located in the entrance to San Francisco Bay just east of the Golden Gate. The marsh is small but otherwise fairly typical of many such restored wetlands worldwide. The marsh is hydraulically connected to the bay and the adjacent Pacific Ocean by a narrow sandy channel. The channel often migrates and sometimes closes completely, which effectively blocks the tidal connection to the ocean and disrupts the hydraulics and ecology of the marsh. Field measurements of waves and tides have been examined in order to evaluate the conditions responsible for the intermittent closure of the marsh entrance. The most important factor found to bring about the entrance channel closure is the occurrence of large ocean waves. However, there were also a few closure events during times with relatively small offshore waves. Examination of the deep-water directional wave spectra during these times indicates the presence of a small secondary peak corresponding to long period swell from the southern hemisphere, indicating that CFM and San Francisco Bay in general may be more susceptible to long period ocean swell emanating from the south or southwest than the more common ocean waves coming from the northwest. The tidal records during closure events show no strong relationship between closures and tides, other than that closures tend to occur during multi-day periods with successively increasing high tides. It can be inferred from these findings that the most important process to the intermittent closure of the entrance to CFM is littoral sediment transport driven by the influence of ocean swell waves breaking along the CFM shoreline at oblique angles. During periods of large, oblique waves the littoral transport of sand likely overwhelms the scour potential of the tidal flow in the entrance channel. ?? 2011.

A new class of materials with promising thermoelectric properties: MNiSn (M=Ti, Zr, Hf)

Energy Technology Data Exchange (ETDEWEB)

Hohl, H; Ramirez, A P; Kaefer, W; Fess, K; Thurner, Ch; Kloc, Ch; Bucher, E

1997-07-01

TiNiSn, ZrNiSn and HfNiSn are members of a large group of intermetallic compounds which crystallize in the cubic MgAgAs-type structure. Polycrystalline samples of these compounds have been prepared and investigated for their thermoelectric properties. With thermopowers of about {minus}200 {micro}V/K and resistivities of a few m{Omega}cm, power factors S{sup 2}/{rho} as high as 38 {micro}W/K{sup 2}cm were obtained at 700 K. These remarkably high power factors are, however, accompanied by a thermal conductivity, solid solutions Zr{sub 1{minus}x}Hf{sub x}NiSn, Zr{sub 1{minus}x}Ti{sub x}NiSn, and Hf{prime}{sub 1{minus}x}Ti{sub x}NiSn were formed. The figure of merit of Zr{sub 0.5}Hf{sub 0.5}NiSn at 700 K (ZT = 0.41) exceeds the end members ZrNiSn (ZT = 0.26) and HfNiSn (ZT = 0.22).

Mechanical alloying of Hf and Fe powders

International Nuclear Information System (INIS)

Mendoza Zelis, L.; Crespo, E.; Creus, M.; Damonte, L.C.; Sanchez, F.H.; Punte, G.

1994-01-01

Pure crystalline Hf and Fe powders were mixed and milled under an argon atmosphere. The evolution of the system with milling time was followed with Moessbauer effect spectroscopy and X-ray diffraction. The results indicate that in the first stages an amorphous Fe-rich alloy was gradually formed together with a solid solution of Hf in Fe beyond the solubility limit. (orig.)

Chemical reaction at the interface between pentacene and HfO2

International Nuclear Information System (INIS)

Kang, S.J.; Yi, Y.; Kim, K.H.; Yoo, C.Y.; Moewes, A.; Cho, M.H.; Denlinger, J.D.; Whang, C.N.; Chang, G.S.

2005-01-01

The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1 eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68 eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator

Mechanical properties of ultra-thin HfO{sub 2} films studied by nano scratches tests

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En; Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321, Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei; Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2013-02-01

10-nm-thick atomic layer deposited HfO{sub 2} films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi{sub x}O{sub y} induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi{sub x}O{sub y} with increasing annealing temperatures. The existence of HfSi{sub x}O{sub y} broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi{sub x}O{sub y} induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO{sub 2} films were assessed by nano-scratch and indentation. ► Scratch depth of HfO{sub 2} films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO{sub 2} films increased with the increase of annealing temperatures.

patient entrance skin doses at minna and ibadan for common

African Journals Online (AJOL)

DR. AMINU

Entrance surface dose from two diagnostic x-ray centers in Nigeria for three common radiological examinations is .... typical ESD values for adult patients for three different ... TTX located in the region of Nigeria where regulatory activities have ...

Solid phase crystallisation of HfO2 thin films

International Nuclear Information System (INIS)

Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

2005-01-01

In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

Impacts of post-metallization annealing on the memory performance of Ti/HfO2-based resistive memory

International Nuclear Information System (INIS)

Chen, Pang-Shiu; Chen, Yu-Sheng; Lee, Heng-Yuan

2013-01-01

Impacts of post-metallization annealing (PMA) on bipolar resistance switching of Ti/HfO x stacked films were investigated. A Ti capping film as a scavenging layer with assistance of PMA is used to tune the dielectric strength of the 10-nm-thick HfO x layer. The polycrystalline microstructure of 10-nm-thick HfO x seems immune to the temperature of PMA in this work. The initial resistance and forming voltage in the Ti/HfO x devices mitigate as the increment of the annealing temperature. With enough annealing temperature (>450 °C), the device shows a good on/off ratio, high temperature operation ability and robust endurance (>10 6 cycles). Through the reaction between Ti and HfO x at 500 °C, the abundant oxygen ions are depleted from the insulator and the left charge-defects building conductive percolative paths in the dielectric layer. The operation-polarity independence of the form-free HfO x device in initial state is demonstrated. The forming-free memory with initial low resistance of 800 Ω at 0.1 V can be operated with stable bipolar resistance switching via initially positive or negative voltage sweep. The formless device with 10 nm thick HfO x also exhibits excellent nonvolatile memory performances, including enough on/off ratio, improved HRS uniformity and good high temperature retention (3 × 10 4 s at 200 °C). The results of this work suggest that the PMA temperature will affect the memory window and cycling reliability of the Ti/HfO x -based resistive memory. Optimum temperature (450 °C) will improve the memory performance of the Ti/HfO x stacked layer. (paper)

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

Energy Technology Data Exchange (ETDEWEB)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

2015-04-16

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

Post-translational regulation of P2X receptor channels: modulation by phospholipids

Directory of Open Access Journals (Sweden)

Louis-Philippe eBernier

2013-11-01

Full Text Available P2X receptor channels mediate fast excitatory signaling by ATP and play major roles in sensory transduction, neuro-immune communication and inflammatory response. P2X receptors constitute a gene family of calcium-permeable ATP-gated cation channels therefore the regulation of P2X signaling is critical for both membrane potential and intracellular calcium homeostasis. Phosphoinositides (PIPn are anionic signaling phospholipids that act as functional regulators of many types of ion channels. Direct PIPn binding was demonstrated for several ligand- or voltage-gated ion channels, however no generic motif emerged to accurately predict lipid-protein binding sites. This review presents what is currently known about the modulation of the different P2X subtypes by phospholipids and about critical determinants underlying their sensitivity to PIPn levels in the plasma membrane.All functional mammalian P2X subtypes tested, with the notable exception of P2X5, have been shown to be positively modulated by PIPn, i.e. homomeric P2X1, P2X2, P2X3, P2X4, and P2X7, as well as heteromeric P2X1/5 and P2X2/3 receptors. Based on various results reported on the aforementioned subtypes including mutagenesis of the prototypical PIPn-sensitive P2X4 and PIPn-insensitive P2X5 receptor subtypes, an increasing amount of functional, biochemical and structural evidence converges on the modulatory role of a short polybasic domain located in the proximal C-terminus of P2X subunits. This linear motif, semi-conserved in the P2X family, seems necessary and sufficient for encoding direct modulation of ATP-gated channels by PIPn. Furthermore, the physiological impact of the regulation of ionotropic purinergic responses by phospholipids on pain pathways was recently revealed in the context of native crosstalks between phospholipase C-linked metabotropic receptors and P2X receptor channels in DRG sensory neurons and microglia.

Application of in-situ nano-scanning calorimetry and X-ray diffraction to characterize Ni–Ti–Hf high-temperature shape memory alloys

Energy Technology Data Exchange (ETDEWEB)

McCluskey, Patrick J., E-mail: mccluske@ge.com [GE Global Research, One Research Circle, Niskayuna, NY 12309 (United States); Xiao, Kechao [School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138 (United States); Gregoire, John M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125 (United States); Dale, Darren [Cornell High Energy Synchrotron Source, Ithaca, NY 14853 (United States); Vlassak, Joost J. [School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138 (United States)

2015-03-10

Combinatorial nanocalorimetry and synchrotron X-ray diffraction were combined to study the martensite–austenite (M–A) phase transformation behavior of Ni–Ti–Hf shape memory alloys. A thin-film library of Ni–Ti–Hf samples with a range of compositions was deposited on a parallel nano-scanning calorimeter device using sputter deposition. Crystallization of each amorphous as-deposited sample by local heating at approximately 10{sup 4} K/s produced a nanoscale grain structure of austenite and martensite. Individual samples were then cycled through the M–A transformation, while the transformation enthalpy was measured by nanocalorimetry and the low- and high-temperature phase compositions were determined by X-ray diffraction. The techniques enable correlation of the observed behavior during thermal cycling with the thermodynamic and structural properties of the samples.

Dosimetry of Occupationally Exposed Persons in Diagnostic and Interventional Arteriography. Part 1: Assessment of Entrance Doses

International Nuclear Information System (INIS)

Kicken, P.J.H.; Kemerink, G.J.; Engelshoven, J.M.A. van

1999-01-01

The purpose of this study was to obtain representative quantitative information on exposure conditions and entrance doses of occupationally exposed persons (workers) in diagnostic and interventional arteriography. In a study in three hospitals all parameters of the X ray systems that are related to the exposure of workers were quantified with an automatic data acquisition system. Using LiF thermoluminescence dosemeters, entrance doses to workers were measured at the forehead, neck, thorax, abdomen, upper arms, hands and lower legs. Measurements were performed during 353 procedures, and it was found that exposure of workers was predominantly caused by fluoroscopy. Averaged over all procedures in the annual workload, entrance doses were below 120 μGy when an undercouch X ray tube and a mechanical contrast injector were used. For an overcouch tube the doses were higher. It is concluded that entrance doses are low, and that legally established annual dose limits are un-likely to be exceeded. (author)

Matagorda Ship Channel, Texas: Jetty Stability Study

National Research Council Canada - National Science Library

Kraus, Nicholas C; Lin, Lihwa; Batten, Brian K; Brown, Gary L

2006-01-01

.... The current has produced a large area of scour on the bay side of the inlet adjacent to the west jetty, and vessels encountering a strong along-channel and cross-channel current at the entrance...

Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

2011-09-12

We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Science for common entrance physics : answers

CERN Document Server

Pickering, W R

2015-01-01

This book contains answers to all exercises featured in the accompanying textbook Science for Common Entrance: Physics , which covers every Level 1 and 2 topic in the ISEB 13+ Physics Common Entrance exam syllabus. - Clean, clear layout for easy marking. - Includes examples of high-scoring answers with diagrams and workings. - Suitable for ISEB 13+ Mathematics Common Entrance exams taken from Autumn 2017 onwards. Also available to purchase from the Galore Park website www.galorepark.co.uk :. - Science for Common Entrance: Physics. - Science for Common Entrance: Biology. - Science for Common En

Study on the functional model of the commentation channel system of the HF station for U-70 synchrotron proton beam overbunching

International Nuclear Information System (INIS)

Balalykin, N.I.; Korenev, S.A.; Kostyuchenko, S.V.

1989-01-01

The description and test results for a functional of the system for commutation of the U-70 synchrotron overbunching HF station channels are given. In coaxial line the pass spark gap is located and in the T-joint-the short-circuit trigatron type one. The experiments were conducted at the impulse power of 100-300 kW. Types of spark gaps were selected and their characteristics were obtained. Carbon plastic proved to be the most perspective material for the electrodes. The experiments showed applicability of the layout suggested. 3 refs.; 4 figs

Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

KAUST Repository

Gandi, Appala

2017-09-18

We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address the effects of doping. While many half-Heuser alloys show excellent thermoelectric performance, the materials under study are special by supporting both n- and p-doping. We identify the reasons for this balanced thermoelectric transport and explain why experimentally p-doping is superior to n-doping. We also determine the spectrum of phonon mean free paths to guide grain refinement methods to enhance the thermoelectric figure of merit.

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

Science.gov (United States)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

P2X receptor channels in endocrine glands

Czech Academy of Sciences Publication Activity Database

Stojilkovic, S. S.; Zemková, Hana

2013-01-01

Roč. 2, č. 4 (2013), s. 173-180 ISSN 2190-460X R&D Projects: GA ČR(CZ) GBP304/12/G069 Institutional support: RVO:67985823 Keywords : ATP * purinergic P2X receptor channels * pituitary * endocrine glands Subject RIV: ED - Physiology

The robustness in dynamics of out of equilibrium bidirectional transport systems with constrained entrances

Science.gov (United States)

Sharma, Natasha; Verma, Atul Kumar; Gupta, Arvind Kumar

2018-05-01

Macroscopic and microscopic long-distance bidirectional transfer depends on connections between entrances and exits of various transport mediums. Persuaded by the associations, we introduce a small system module of Totally Asymmetric Simple Exclusion Process including oppositely directed species of particles moving on two parallel channels with constrained entrances. The dynamical rules which characterize the system obey symmetry between the two species and are identical for both the channels. The model displays a rich steady-state behavior, including symmetry breaking phenomenon. The phase diagram is analyzed theoretically within the mean-field approximation and substantiated with Monte Carlo simulations. Relevant mean-field calculations are also presented. We further compared the phase segregation with those observed in previous works, and it is examined that the structure of phase separation in proposed model is distinguished from earlier ones. Interestingly, for phases with broken symmetry, symmetry with respect to channels has been observed as the distinct particles behave differently while the similar type of particles exhibits the same conduct in the system. For symmetric phases, significant properties including currents and densities in the channels are identical for both types of particles. The effect of symmetry breaking occurrence on the Monte Carlo simulation results has also been examined based on particle density histograms. Finally, phase properties of the system having strong size dependency have been explored based on simulations findings.

Study of incomplete fusion reaction dynamics in 13C +165 Ho system and its dependence on various entrance channel parameters

Science.gov (United States)

Tali, Suhail A.; Kumar, Harish; Ansari, M. Afzal; Ali, Asif; Singh, D.; Ali, Rahbar; Giri, Pankaj K.; Linda, Sneha B.; Parashari, Siddharth; Kumar, R.; Singh, R. P.; Muralithar, S.

2018-02-01

The excitation functions for the evaporation residues populated in the interaction of 13C +165 Ho system have been measured at projectile energies ≈ 4-7 MeV/nucleon. Stacked foil activation technique followed by off-line γ-ray spectroscopy have been employed in the present work. The experimentally measured cross-sections are analyzed in the frame work of statistical model code PACE4, which takes into account only the complete fusion reaction cross-sections. The evaporation residues populated via xn and pxn channels were found to be in good agreement with the PACE4 predictions, while a significant enhancement in the measured cross-sections over PACE4 predictions is observed in case of α-emitting channels, which may be attributed to the incomplete fusion process. For the better understanding of incomplete fusion dynamics, the incomplete fusion fraction has also been deduced and its sensitivity with various entrance channel parameters like: projectile energy, mass-asymmetry, projectile structure in terms of Qα-value and Coulomb effect has been studied in the present work. The incomplete fusion fraction is found to increase with increasing the projectile energy and a strong projectile structure dependent mass-asymmetry systematic is also observed. The incomplete fusion fraction is also found to be small for more negative Qα-value projectile (13C) induced reactions as compared to less negative Qα-value projectiles (12C, 16O and 20Ne) induced reactions with the same target nucleus 165Ho. An interesting trend is obtained on further investigation of incomplete fusion dependence on Coulomb effect (ZPZT).

Investigation of new type Cu-Hf-Al bulk glassy alloys

International Nuclear Information System (INIS)

Nagy, E; Ronto, V; Solyom, J; Roosz, A

2009-01-01

In the last years new type Cu-Hf-Al ternary alloys were developed with high glass forming ability and ductility. The addition of Al to Cu-Hf alloys results in improvements in glass formation, thermal stability and mechanical properties of these alloys. We have investigated new Cu-based bulk amorphous alloys in Cu-Hf-Al ternary system. The alloys with Cu 49 Hf 42 Al 9 , Cu 46 Hf 45 Al 9 , Cu 50 Hf 42.5 Al 7.5 and Cu 50 Hf 45 Al 5 compositions were prepared by arc melting. The samples were made by centrifugal casting and were investigated by X-ray diffraction method. Thermodynamic properties were examined by differential scanning calorimetry and the structure of the crystallising phases by scanning electron microscopy. The determination of liquidus temperatures of alloys were measured by differential thermal analysis.

Comparison of entrance exposure and signal-to-noise ratio between an SBDX prototype and a wide-beam cardiac angiographic system

International Nuclear Information System (INIS)

Speidel, Michael A.; Wilfley, Brian P.; Star-Lack, Josh M.; Heanue, Joseph A.; Betts, Timothy D.; Van Lysel, Michael S.

2006-01-01

The scanning-beam digital x-ray (SBDX) system uses an inverse geometry, narrow x-ray beam, and a 2-mm thick CdTe detector to improve the dose efficiency of the coronary angiographic procedure. Entrance exposure and large-area iodine signal-to-noise ratio (SNR) were measured with the SBDX prototype and compared to that of a clinical cardiac interventional system with image intensifier (II) and charge coupled device (CCD) camera (Philips H5000, MRC-200 x-ray tube, 72 kWp max). Phantoms were 18.6-35.0 cm acrylic with an iohexol-equivalent disk placed at midthickness (35 mg/cm 2 iodine radiographic density). Imaging was performed at 15 frame/s, with the disk at mechanical isocenter and an 11-cm object-plane field width. The II/CCD system was operated in cine mode with automatic exposure control. With the SBDX prototype at maximum x-ray output (120 kVp, 24.3 kWp), the SBDX SNR was 107%-69% of the II/CCD SNR, depending on phantom thickness, and the SBDX entrance exposure rate was 10.7-9.3 R/min (9.4-8.2 cGy/min air kerma). For phantoms where an equal-kVp imaging comparison was possible (≥23.3 cm), the SBDX SNR ranged from 47% to 69% of the II/CCD SNR while delivering 6% to 9% of the II/CCD entrance exposure rate. From these measurements it was determined that the relative SBDX entrance exposure at equal SNR would be 31%-16%. Results were consistent with a model for relative entrance exposure at equal SNR, which predicted a 3-7 times reduction in entrance exposure due to SBDX's comparatively low scatter fraction (5.5%-8.1% measured, including off-focus radiation), high detector detective quantum efficiency (66%-73%, measured from 70 to 120 kVp), and large entrance field area (1.7x-2.3x, for the same object-plane field width). With improvements to the system geometry, detector, and x-ray source, SBDX technology is projected to achieve conventional cine-quality SNR over a full range of patient thicknesses, with 5-10 times lower skin dose

Assessment of entrance skin doses for patients undergoing diagnostic X-ray examinations in some major hospitals of Uttarakhand, India

International Nuclear Information System (INIS)

Uniyal, S.C.; Prasad, V.; Chaturvedi, V.; Raghuvanshi, S.; Sharma, S.D.

2016-01-01

Entrance skin dose (ESD) was calculated based on the X-ray beam output, the exposure parameters used for the actual examination and the standard value of backscatter factor. Descriptive statistics were generated from the data by using Microsoft Excel 2010. The third quartile values of ESDs obtained in this study for different X-ray projections of chest anterior-posterior (AP), chest posterior-anterior (PA), cervical spine, thoracic spine, lumber spine AP, lumber spine lateral, abdomen, KUB, pelvis, skull and knee joint were 0.79, 0.28, 1.20, 2.80, 4.26, 9.82, 2.68, 3.21, 2.69, 2.21 and 0.55 mGy respectively. The ratio of maximum to minimum ESD values ranges from 5.2 for thoracic spine to 19.76 for chest AP X-ray examinations. In general, the obtained ESD values were found to be either lower than or in agreement with the reported national/international values

Evaluation of pediatrics entrance surface air kerma during chest X-ray examinations in some Khartoum hospitals

International Nuclear Information System (INIS)

Mohamed, Hassan Ishag Yahya

2015-10-01

The aim of this study was to determine the amount of entrance surface air kerma dose in air that can reflect the amount of the risk that the children, are subjected to. The parameters that are involved in this project are x-ray tube current (mA), exposure time (sec.), and focal skin distance (FSD) in cm. ESAK is calculated using the equation: ESAK=(Output (mGy/mAs) x (100/FSD) 2 X mAs) for different examination of different patients. 65 cases were involved in this study, the results show that the ESAK mean value (0.18±0.07) mGy, (0.06±0.07) mGy, (0.045±0.017) mGy and (0.049±0.013) mGy at the hospitals (IBNIOF Omdurman, police, clinic doctor) respectively. IBNIOF presented the highest ESAK (0.18±0.07) mGy, while it was lowest in police (0.045±0.017) mGy. The estimated ESAK value were within the established international reference dose values and also the values obtained in pervious studies however, variations were observed in ESAK values among hospitals under study which could be due to the differences in exposure parameters used. Also tube output has some effect on obtained ESAK. (author)

Microstructural characterization of as-cast hf-b alloys

Directory of Open Access Journals (Sweden)

João Carlos Jânio Gigolotti

2012-04-01

Full Text Available An accurate knowledge of several metal-boron phase diagrams is important to evaluation of higher order systems such as metal-silicon-boron ternaries. The refinement and reassessment of phase diagram data is a continuous work, thus the reevaluation of metal-boron systems provides the possibility to confirm previous data from an investigation using higher purity materials and better analytical techniques. This work presents results of rigorous microstructural characterization of as-cast hafnium-boron alloys which are significant to assess the liquid composition associated to most of the invariant reactions of this system. Alloys were prepared by arc melting high purity hafnium (minimum 99.8% and boron (minimum 99.5% slices under argon atmosphere in water-cooled copper crucible with non consumable tungsten electrode and titanium getter. The phases were identified by scanning electron microscopy, using back-scattered electron image mode and X-ray diffraction. In general, a good agreement was found between our data and those from the currently accepted Hafnium-Boron phase diagram. The phases identified are αHfSS and B-RhomSS, the intermediate compounds HfB and HfB2 and the liquide L. The reactions are the eutectic L ⇔ αHfSS + HfB and L ⇔ HfB2 + B-Rhom, the peritectic L + HfB2 ⇔ HfB and the congruent formation of HfB2.

Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

International Nuclear Information System (INIS)

Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

2013-01-01

A comparative study of two kinds of oxidants (H 2 O and O 3 ) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO x ) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO x films are studied. The preliminary testing results indicate that the impurity level of HfAlO x films grown with both H 2 O and O 3 used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO x film. Additional thermal annealing effects on the properties of HfAlO x films grown with different oxidants are also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Qian, Ling-Xuan; Wu, Ze-Han; Zhang, Yi-Yu; Liu, Xing-Zhao; Li, Yan-Rong; Liu, Yuan; Song, Jia-Qi

2017-01-01

Amorphous InGaZnO 4 thin film transistors (a-IGZO TFTs) with HfLaO gate dielectrics have been widely demonstrated to possess extremely excellent electrical characteristics, and thus show great potential for applications in various next-generation electronic products. Nevertheless, the in-depth understanding of HfLaO/IGZO interfacial features is still lacking, which makes further device optimization lack clear guidance. In this work, the band alignment and interfacial chemical structure of a sputtering-prepared HfLaO/IGZO heterojunction was investigated through x-ray photoelectron spectroscopy. The valence and conduction band offsets (Δ E v and Δ E c ) at the interface were determined to be 0.57 eV and 1.48 eV, respectively. The relatively large Δ E v is mainly attributed to the formation of the interfacial layer (IL) and thus the upward band bending from IGZO to the surface of HfLaO. Furthermore, it was found that the oxygen vacancies on the surface of IGZO were significantly suppressed upon the deposition of HfLaO, which not only explained the previously reported ultrahigh performance of a-IGZO/HfLaO TFTs to some extent, but also additionally validated the formation of the IL. Our findings have successfully revealed the importance of ILs in modifying the band alignment and interfacial trap states of HfLaO/IGZO heterojunctions, thus suggesting a potential route to further optimizing a-IGZO/HfLaO TFTs so as to satisfy the requirements of next-generation technologies. (paper)

Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments

Energy Technology Data Exchange (ETDEWEB)

Li, Chih-Hung; Chung, Hantsun [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Jian-Zhang, E-mail: jchen@ntu.edu.tw [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Cheng, I-Chun, E-mail: iccheng@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-11-03

Rf-sputtered Mg{sub 0.05}Zn{sub 0.95}O thin films become amorphous/nanocrystalline with the addition of hafnium oxide. All films (thickness: ∼ 100 nm) sputter-deposited from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets are highly transparent (> 80%) from 400 to 800 nm. The Tauc bandgap ΔE (eV) increases with the Hf content. However, the bandgap decreases after thermal treatment. The reduction in the bandgap is positively correlated with the Hf content and annealing temperature. The residual stresses of films sputtered from Mg{sub 0.05}Zn{sub 0.95}O and Hf{sub 0.025}Mg{sub 0.05}Zn{sub 0.925}O targets are determined based on X-ray diffraction (XRD) data using a bi-axial stress model. The residual stresses of as-deposited films are compressive. As the annealing temperature increases, the residual stresses are relaxed and even become tensile. The bandgap narrowing after thermal treatment is attributed to the stress relaxation that changes the repulsion between the oxygen 2p and zinc 4s bands. Slight grain growth may also result in bandgap reduction because bandgap modification caused by the quantum confinement effect becomes significant in amorphous/nanocrystalline materials. The amorphous thin films reveal good thermal stability after 600 °C annealing for up to 2 h, as evidenced by the XRD and transmission spectra. - Highlights: • Thin films are sputtered from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets at room temperature. • Bandgap increases with Hf content but decreases with post-annealing temperature. • Bandgap narrowing after annealing partly results from the relaxation of stresses. • Bandgap narrowing partly results from quantum confinement effect by nanomaterials. • Hf doping increases resistivity due to the lattice disorder and enlarged bandgap.

Effects of Rh on the thermoelectric performance of the p-type Zr0.5Hf0.5Co1-xRhxSb0.99Sn0.01 half-Heusler alloys

International Nuclear Information System (INIS)

Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

2010-01-01

We show that Rh substitution at the Co site in Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 (0≤x≤1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr 0.5 Hf 0.5 RhSb 0.99 Sn 0.01 . The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 half-Heusler materials prepared by solid state reaction at 1173 K.

Nanotube formation and morphology change of Ti alloys containing Hf for dental materials use

International Nuclear Information System (INIS)

Jeong, Yong-Hoon; Lee, Kang; Choe, Han-Cheol; Ko, Yeong-Mu; Brantley, William A.

2009-01-01

In this paper, Ti-Hf (10, 20, 30 and 40 wt.%) alloys were prepared by arc melting, and subjected to heat treatment for 24 h at 1000 o C in an argon atmosphere. Formation of surface nanotubes was achieved by anodizing a Ti-Hf alloy in 1.0 M H 3 PO 4 electrolytes with small amounts of NaF at room temperature. Microstructures of the alloys and nanotube morphology were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The homogenized Ti-Hf alloys had a needle-like microstructure of α phase, and nanotubes formed on Ti-xHf alloys had the anatase phase after treatment that promoted crystallization. Uniform nanotubes formed for Hf contents up to 20 wt.%. Irregular nanotubes formed on the Ti-30Hf and Ti-40Hf alloys. The structure of the irregular layers on the Ti-30Hf and Ti-40Hf alloys had nanotubes of two sizes. Increasing the Hf content in Ti led to the formation of nanotubes with more narrow size. The pores in the nanotubes typically had a diameter ranging from 80-120 nm and a length of approximately 1.7 μm. It is concluded that nanotube morphology on Ti-Hf alloys can controlled by varying the amount of Hf.

Phase stability predictions of Cr1−x, Mx)2(Al1−y, Ay)(C1−z, Xz) (M = Ti, Hf, Zr; A = Si, X = B)

International Nuclear Information System (INIS)

Shang, Lin; Music, Denis; Baben, Moritz to; Schneider, Jochen M

2014-01-01

The phase stability of (Cr 1−x , M x ) 2 (Al 1−y , A y )(C 1−z , X z ) (M = Ti, Hf, Zr; A = Si, X = B, space group P6 3 /mmc, prototype Cr 2 AlC) was studied using ab initio calculations. Based on the energy of mixing data as well as the density of states (DOS) analysis, (Cr 1−x , Zr x ) 2 AlC and (Cr 1−x , Hf x ) 2 AlC are predicted to be unstable, whereas (Cr 1−x , Ti x ) 2 AlC, Cr 2 (Al 1−y , Si y )C and Cr 2 Al(C 1−z , B z ) are predicted to be stable or metastable. The density of states analysis reveals that small differences in the position of the Fermi level alters the phase stability: (Cr 1−x , Zr x ) 2 AlC and (Cr 1−x , Hf x ) 2 AlC are predicted to be unstable or metastable as the Fermi level lies at a peak position. While the Cr dominated DOS for (Cr 1−x , Ti x ) 2 AlC plateaus at the Fermi level indicating stability. Implications of these results for the vapour phase condensation of self-healing Cr 2 AlC based materials are discussed. (paper)

Band alignment of HfO{sub 2}/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy: Effect of CHF{sub 3} treatment

Energy Technology Data Exchange (ETDEWEB)

Liu, Xinke; He, Jiazhu; Tang, Dan; Jia, Fang; Lu, Youming, E-mail: ymlu@szu.edu.cn; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun [College of Materials Science and Engineering, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Liu, Qiang; Wen, Jiao; Yu, Wenjie, E-mail: casan@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS,865 Chang Ning Road, Shanghai 200050 (China); Pan, Jisheng [Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602 (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore)

2015-09-07

The energy band alignment between HfO{sub 2}/multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO{sub 2} was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 1.98 eV and a conduction band offset (CBO) of 2.72 eV were obtained for the HfO{sub 2}/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the HfO{sub 2}/ML-MoS{sub 2} interface were found to be 2.47 eV and 2.23 eV, respectively. The band alignment difference is believed to be dominated by the down-shift in the core level of Hf 4d and up-shift in the core level of Mo 3d, or the interface dipoles, which caused by the interfacial layer in rich of F.

In-situ atomic layer deposition growth of Hf-oxide

International Nuclear Information System (INIS)

Karavaev, Konstantin

2010-01-01

We have grown HfO 2 on Si(001) by atomic layer deposition (ALD) using HfCl 4 , TEMAHf, TDMAHf and H 2 O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl 4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO 2 . The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO 2 : contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

In-situ atomic layer deposition growth of Hf-oxide

Energy Technology Data Exchange (ETDEWEB)

Karavaev, Konstantin

2010-06-17

We have grown HfO{sub 2} on Si(001) by atomic layer deposition (ALD) using HfCl{sub 4}, TEMAHf, TDMAHf and H{sub 2}O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl{sub 4} experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO{sub 2}. The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO{sub 2}: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

Wave Climate and Littoral Sediment Transport Potential, Cape Fear River Entrance and Smith Island to Ocean Isle Beach, North Carolina

National Research Council Canada - National Science Library

Thompson, Edward

1999-01-01

Numerical model studies were conducted to assist the U.S. Army Engineer District, Wilmington, in evaluating potential plans for modifying the Cape Fear River entrance channel and in preparing General Reevaluation Reports...

Development of mathematical model for estimation of entrance surface dose in mammography

International Nuclear Information System (INIS)

Abdelgani, Yassir Mohammed Tahir

2013-05-01

Computer simulation is a convenient and frequently used tool in the study of x-ray mammography, for the design of novel detector systems, the evaluation of dose deposition, x-ray technique optimization, and other applications. An important component in the simulation process is the accurate computer generation of x-ray spectra. A computer model for the generation of x-ray spectra in the mammographic energy rang from 18 keV to 40 ke V has been developed by Boone et al. Due to the lack of QC and dose measurement tools, in addition to unavailability of medical physics, a mathematical tool was developed for estimation of patient exposure and entrance dose. The proposed model require no assumptions concerning the physics of x-ray production in an x-ray tube, but rather makes use of x-ray spectra recently measured experimentally by John M Boone (Department of Radiology, University of California). Using experimental dose measurements for specific tube voltage and tube current the generated x-ray spectra were calibrated. The spectrum calibration factors show a tube voltage dependency. From the calibrated x-ray spectrum, the exposure and entrance dose were estimated for different k Vp and m A. Results show good agreement between the measured and estimated values for tube voltage between 18 to 45 k Vp with a good correlation of nearly 1 and equal slope. The maximum estimated different between the measured and the simulated dose is approximately equal to 0.07%.(Author)

Band alignment of HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N determined by angle-resolved x-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Owen, Man Hon Samuel, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org; Bhuiyan, Maruf Amin; Yeo, Yee-Chia, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Zhang, Zheng; Pan, Ji Sheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

2014-07-21

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. The band bending near the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface was investigated, and the potential variation across the interface was taken into account in the band alignment calculation. It is observed that the binding energies for N 1s and Al 2p in In{sub 0.18}Al{sub 0.82}N decreases and the corresponding extracted valence band offsets increases with increasing θ (i.e., closer to the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface), as a result of an upward energy band bending towards the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface. The resultant valence band offset and the conduction band offset for the ALD-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface calculated was found to be 0.69 eV and 1.01 eV, respectively.

Optical metrology for analysis of lobster-eye x-ray optics

International Nuclear Information System (INIS)

Irving, Thomas H.K.; Peele, Andrew G.; Nugent, Keith A.

2003-01-01

A new method that uses optical microscopy to determine the physical structure of lobster-eye x-ray optics is described. This approach offers the ability to predict x-ray performance without having to take an x-ray measurement. An overlapping series of images of the entrance and exit faces of an optic are obtained and examined by purpose-built software. A 24-parameter description of each channel is obtained from which a quantitative analysis of all the major optic defects, except surface roughness, is performed. Results for a planar lobster-eye optic are used to illustrate this technique and discuss its abilities as well as directions for future enhancements

The need for national diagnostic reference levels: entrance surface dose measurement in intraoral radiography

International Nuclear Information System (INIS)

Mortazavi, S. M. J.; Shareghi, A.; Kavousi, A.; Ghiassi-Nejad, M.; Jafari-Zadeh, M.; Nazeri, F.; Mozdarani, H.

2004-01-01

Background: Intraoral radiographies are the most frequent X-ray examinations in humans. According to International Commission on Radiation Protection recommendations, the selection of a diagnostic reference level should be specific to a country or region. Critical organs such as thyroid gland are exposed to X-rays in intraoral radiography and these exposures should be kept as low as reasonably achievable. To assist the development of DRLs for intraoral radiography, a National Radiation Protection Department-sponsored pilot study was carried out. Materials and methods: thermoluminescent dosimetry is widely acknowledged to be the recommended method for measuring entrance surface doses. In this study, entrance surface doses was measured using LiF thermoluminescent dosimeters on the skin (either mandibular or maxillary arcs) of 40 patients. Three thermoluminescent dosimetry chips were placed on the skin of each patient. The doses were averaged for each radiography and mean entrance surface doses of all patients calculated. Results: the mean ±SD entrance surface dose at the center of the beam on the patient's skin in intraoral radiography was 1.173 ±0.606 mGy (ranged from 0.01 o 0.40 m Gy). The mean entrance surface doses for male and female patients were 1.380± 0.823, and 1.004± 0.258 respectively. No statistically significant difference was found between these means. Despite its necessity , in national level , there is no published data on the diagnostic reference levels for intraoral radiography. However, the results obtained in this study are lower than those reported by investigators in other countries. Conclusion: in IR Iran , due to lack of large scale studies, no diagnostic reference levels have been set for X-ray diagnostic procedures. Due to lack of national diagnostic reference levels, it is not possible to clarify whether in intraoral radiographies any dose reduction techniques are needed. We intend to perform similar nationwide studies to set the

Skin entrance dose for digital and film radiography in Korean dental schools

International Nuclear Information System (INIS)

Cho, Eun Sang; Choi, Kun Ho; Kim, Min Gyu; Lim, Hoi Jeong; Yoon, Suk Ja; Kang, Byung Cheol

2005-01-01

This study was aimed to compare skin entrance dose of digital radiography with that of film radiography and to show the dose reduction achievement with digital systems at 11 dental schools in Korea. Forty six intraoral radiographic systems in 11 dental schools were included in this study. Digital sensors were used in 33 systems and film was used in 13 systems. Researchers and the volunteer visited 11 dental schools in Korea. Researchers asked the radiologic technician at each school to set the exposure parameters and aiming the x-ray tube for the peri apical view of the mandibular molar of the volunteer. The skin entrance doses were measured at the same exposure parameters and distance by the technician for each system with a dosimeter (Multi-O-Meter; Unifors instruments, Billdal, Sweden). The median dose was 491.2 μGy for digital radiography and 1,205.0 μGy for film radiography. The skin entrance dose in digital radiography was significantly lower than that of film radiography (p<0.05). Fifty-nine percent skin entrance dose reduction with digital peri apical radiography was achieved over the film radiography in Korean dental schools.

Skin entrance dose for digital and film radiography in Korean dental schools

Energy Technology Data Exchange (ETDEWEB)

Cho, Eun Sang; Choi, Kun Ho; Kim, Min Gyu; Lim, Hoi Jeong; Yoon, Suk Ja; Kang, Byung Cheol [Chonnam National University College of Medicine, Gwangju (Korea, Republic of)

2005-12-15

This study was aimed to compare skin entrance dose of digital radiography with that of film radiography and to show the dose reduction achievement with digital systems at 11 dental schools in Korea. Forty six intraoral radiographic systems in 11 dental schools were included in this study. Digital sensors were used in 33 systems and film was used in 13 systems. Researchers and the volunteer visited 11 dental schools in Korea. Researchers asked the radiologic technician at each school to set the exposure parameters and aiming the x-ray tube for the peri apical view of the mandibular molar of the volunteer. The skin entrance doses were measured at the same exposure parameters and distance by the technician for each system with a dosimeter (Multi-O-Meter; Unifors instruments, Billdal, Sweden). The median dose was 491.2 {mu}Gy for digital radiography and 1,205.0 {mu}Gy for film radiography. The skin entrance dose in digital radiography was significantly lower than that of film radiography (p<0.05). Fifty-nine percent skin entrance dose reduction with digital peri apical radiography was achieved over the film radiography in Korean dental schools.

Coulomb-nuclear interference measurements of hexadecapole deformations in 168Yb and 178,180Hf

International Nuclear Information System (INIS)

Nettles, W.G.; Mississippi Coll., Clinton; Ramayya, A.V.; Hamilton, J.H.

1988-01-01

Coulomb-nuclear interference studies of 168 Yb and 178,180 Hf have been carried out with alpha particles from the Pittsburgh tandem. From coupled channel fits to the data at 18 MeV for 168 Yb and 19.5 MeV for 178,180 Hf, β 4 c values of -0.030(20), -0.166(18), and -0.180(6) were obtained, respectively. These data agree with the positive M 04 value from sub-Coulomb studies of 168 Yb but with the large negative M 04 values from sub-Coulomb studies of 178,180 Hf. (author)

Ti-catalyzed HfSiO4 formation in HfTiO4 films on SiO2 studied by Z-contrast scanning electron microscopy

Directory of Open Access Journals (Sweden)

Elizabeth Ellen Hoppe

2013-08-01

Full Text Available Hafnon (HfSiO4 as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4 on fused SiO2 is studied by atomic number (Z contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution.

Systems Tl2MoO4-E(MoO4)2, where E=Zr or Hf, and the crystal structure of Tl8Hf(MoO4)6

International Nuclear Information System (INIS)

Bazarov, B.G.; Bazarova, Ts.T.; Fedorov, K.N.; Bazarova, Zh.G.; Chimitova, O.D.; Klevtsova, R.F.; Glinskaya, L.A.

2006-01-01

Systems Tl 2 MoO 4 -E(MoO 4 ) 2 (E=Zr, Hf) were studied by X-ray diffraction, differential thermal analysis and IR spectroscopy. Formation of Tl 8 E(MoO 4 ) 6 and Tl 2 E(MoO 4 ) 2 compounds was established. Phase T-x diagrams of the Tl 2 MoO 4 -Zr(MoO 4 ) 2 system were constructed. Monocrystals were grown, and structure of Tl 8 Hf(MoO 4 ) 6 was studied. The compound is crystallized in monoclinic syngony with elementary cell parameters a=9.9688(6), b=18.830(1), c=7.8488(5) A, β=108.538(1) Deg, Z=2, sp. gr. C2/m. The isolated group [HfMo 6 O 24 ] 8- is responsible for fundamental fragment of the structure. Three varieties of crystallographically independent Tl-polyhedra fill space evenly between fragments [HfMo 6 O 24 ] 8- forming three-dimensional form [ru

Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments

Energy Technology Data Exchange (ETDEWEB)

Li, Chih-Hung; Chen, Jian-Zhang [Institute of Applied Mechanics, National Taiwan University, Taipei City 10617, Taiwan (China); Cheng, I-Chun [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

2013-08-28

HfZnO thin films with various Hf contents are sputter-deposited on glass substrates from Hf{sub x}Zn{sub 1−x}O (x = 0, 2.5, 5, 7.5, and 10 at. %) targets at room temperature. The incorporation of Hf in the ZnO film leads to the amorphorization of the materials. The amorphous structures of high-Hf-content films remain after annealing at 600 °C for 30 min. The built-in stresses of as-deposited films are compressive. As the annealing temperature increases, the stresses are relaxed and even become tensile. The films exhibit a high transmission of 80% in the visible region. The optical bandgap increases with the Hf content, but it decreases with the annealing temperature. This can be attributed to the alteration of strain (stress) status in the films and atomic substitution. The reduction of bandgap partly results from the grain growth, which is due to the quantum confinement effect of the small grains. Hf doping increases the resistivity of ZnO owing to the disorder of the material structure and the higher bandgap, which result in more carrier traps and less thermally excited carriers in the conduction bands.

Mathematics for common entrance three (extension) answers

CERN Document Server

Alexander, Serena

2015-01-01

This book contains answers to all exercises featured in the accompanying textbook Mathematics for Common Entrance Three (Extension) , which provides essential preparation for Level 3 of the ISEB 13+ Mathematics exam, as well as for CASE and other scholarship exams. - Clean, clear layout for easy marking. - Includes examples of high-scoring answers with diagrams and workings. Also available to purchase from the Galore Park website www.galorepark.co.uk :. - Mathematics for Common Entrance Three (Extension). - Mathematics for Common Entrance One. - Mathematics for Common Entrance One Answers. - M

Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

Energy Technology Data Exchange (ETDEWEB)

Ogawa, Shingo, E-mail: Shingo-Ogawa@trc.toray.co.jp [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan)

2015-12-21

The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.

Systematic study on the electronic structure and mechanical properties of X2BC (X = Mo, Ti, V, Zr, Nb, Hf, Ta and W)

International Nuclear Information System (INIS)

Bolvardi, H; Emmerlich, J; To Baben, M; Music, D; Schneider, J M; Von Appen, J; Dronskowski, R

2013-01-01

In this work the electronic structure and mechanical properties of the phases X 2 BC with X =Ti, V, Zr, Nb, Mo, Hf, Ta, W (Mo 2 BC-prototype) were studied using ab initio calculations. As the valence electron concentration (VEC) per atom is increased by substitution of the transition metal X, the six very strong bonds between the transition metal and the carbon shift to lower energies relative to the Fermi level, thereby increasing the bulk modulus to values of up to 350 GPa, which corresponds to 93% of the value reported for c-BN. Systems with higher VEC appear to be ductile as inferred from both the more positive Cauchy pressure and the larger value of the bulk to shear modulus ratio (B/G). The more ductile behavior is a result of the more delocalized interatomic interactions due to larger orbital overlap in smaller unit cells. The calculated phase stabilities show an increasing trend as the VEC is decreased. This rather unusual combination of high stiffness and moderate ductility renders X 2 BC compounds with X = Ta, Mo and W as promising candidates for protection of cutting and forming tools.

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

Science.gov (United States)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Oxidation behavior of TiC, ZrC, and HfC dispersed in oxide matrices

International Nuclear Information System (INIS)

Arun, R.; Subramanian, M.; Mehrotra, G.M.

1990-01-01

The oxidation behavior of hot pressed TiC-Al 2 O 3 , TiC-ZrO 2 , ZrC-ZrO 2 , and HfC-HfO 2 composites has been investigated at 1273 K. The oxidation of TiC, ZrC, and HfC in hot-pressed composites containing ZrO 2 and HfO 2 has been found to be extremely rapid. The kinetics of oxidation of TiC and a 90 wt% TiC-Al 2 O 3 composite appear to be faster compared to that of pure TiC. X-ray diffraction results for hot-pressed ZrC-HfO 2 and HfC-HfO 2 composites indicate partial stabilization of tetragonal ZrO 2 and HfO 2 phases in these composites

Comparison of programmed and cabled re-entrance systems. Elaboration of cabled re-entrance system for a CII 90.40

International Nuclear Information System (INIS)

Perraudeau, Jean

1976-01-01

The objective of this research thesis is to study problems related to re-entrance, and, more particularly, to study a re-entrance system for a CII 90.40 computer. Such a system can be realised under a programmed or cabled form, and both approaches are described and compared. A generalisation of this comparison is briefly proposed. As the computer already possesses a programmed re-entrance system, the author focuses on the study of the cabled re-entrance system which results in an improvement of performance and possibilities provided by this computer, particularly for its use in real time. The design, realisation and development of such a cabled system are reported. A first part reports a theoretical study on re-entrance (definition, problems, applications), a presentation of the computer, a description of the programmed re-entrance system, a presentation of the principle of the chosen cabled re-entrance system, a definition of the structure and operating mode of the cabled pile and a description of its various components, and a flowchart analysis of function execution. The second part reports the practical realisation: definition, technological overview, technology used in the cabled pile, sequencing and multiplexing principle, impulse transmission, logical layouts, and circuit adjustments. The third part presents practical example. An assessment and perspectives are finally discussed

Phase relations in the M2MoO4 - Ag2MoO4 - Hf(MoO4)2 (M=Li, Na) systems

International Nuclear Information System (INIS)

Bazarova, Zh.G.; Bazarov, B.G.; Balsanova, L.V.

2002-01-01

The M 2 MoO 4 - Ag 2 MoO 4 - Hf(MoO 4 ) 2 (M=Li, Na) systems were studied by X-ray diffraction and differential thermal analyses in the subsolidus area (450 - 500 Deg C) for the first time. The formation of the binary compound with the variable composition Li 4-x Hf 1+0.2x (MoO 4 ) 4 (0 ≤ x ≤ 0.6) in the Li 2 MoO 4 - Hf(MoO 4 ) 2 system and the ternary molybdates Li 4 Ag 2 Hf(MoO 4 ) 5 (S 1 ) and Na 2 Ag 2 Hf(MoO 4 ) 4 (S 2 ) was established and the thermal characteristics of the prepared compounds were examined. The new binary molybdate Ag 2 Hf(MoO 4 ) 3 was prepared by the reaction between Ag 2 MoO 4 and Hf(MoO 4 ) 2 [ru

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

International Nuclear Information System (INIS)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

2016-01-01

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Diverse spike-timing-dependent plasticity based on multilevel HfO x memristor for neuromorphic computing

Science.gov (United States)

Lu, Ke; Li, Yi; He, Wei-Fan; Chen, Jia; Zhou, Ya-Xiong; Duan, Nian; Jin, Miao-Miao; Gu, Wei; Xue, Kan-Hao; Sun, Hua-Jun; Miao, Xiang-Shui

2018-06-01

Memristors have emerged as promising candidates for artificial synaptic devices, serving as the building block of brain-inspired neuromorphic computing. In this letter, we developed a Pt/HfO x /Ti memristor with nonvolatile multilevel resistive switching behaviors due to the evolution of the conductive filaments and the variation in the Schottky barrier. Diverse state-dependent spike-timing-dependent-plasticity (STDP) functions were implemented with different initial resistance states. The measured STDP forms were adopted as the learning rule for a three-layer spiking neural network which achieves a 75.74% recognition accuracy for MNIST handwritten digit dataset. This work has shown the capability of memristive synapse in spiking neural networks for pattern recognition application.

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

Science.gov (United States)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

2016-06-01

The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

Science.gov (United States)

K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

2011-01-01

Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

International Nuclear Information System (INIS)

Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

2006-01-01

To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

Entrance C - Meyrin site: new access conditions

CERN Multimedia

2013-01-01

Entrance C on the Meyrin site, which drivers of motorised vehicles can use Mondays to Fridays from 7 a.m. to 9 a.m. and from 5 p.m. to 7 p.m., has been altered to include a turnstile to allow cyclists and pedestrians to use their access card to get in and out of the site from 6 a.m. until 10 p.m.   The following video illustrates how to use the new turnstile: A new type of entrance gate fitted with a number plate reader similar to that installed at the entrance to the Prévessin site should, once fully tested, allow drivers of motorised vehicles to access the site. For the time being, the conditions of use of Entrance C remain unchanged. Further information on the entry into force of new arrangements will be issued in due course. For further information about CERN entrances: CERN opening hours CERN control access GS Department

Electrical transport of bottom-up grown single-crystal Si1-xGex nanowire

International Nuclear Information System (INIS)

Yang, W F; Lee, S J; Liang, G C; Whang, S J; Kwong, D L

2008-01-01

In this work, we fabricated an Si 1-x Ge x nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si 1-x Ge x NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-x Ge x NWs. It is found that both undoped and phosphorus-doped Si 1-x Ge x NW MOSFETs exhibit p-MOS operation while enhanced performance of higher I on ∼100 nA and I on /I off ∼10 5 are achieved from phosphorus-doped Si 1-x Ge x NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec -1 was obtained by reducing HfO 2 gate dielectric thickness. A comprehensive study on SBH between the Si 1-x Ge x NW channel and Pd source/drain shows that a doped Si 1-x Ge x NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH

Phase transformation and precipitation in aged Ti-Ni-Hf high-temperature shape memory alloys

International Nuclear Information System (INIS)

Meng, X.L.; Cai, W.; Zheng, Y.F.; Zhao, L.C.

2006-01-01

More attention has been paid to ternary Ti-Ni-Hf high-temperature shape memory alloys (SMAs) due to their high phase transformation temperatures, good thermal stability and low cost. However, the Ti-Ni-Hf alloys have been found to have low ductility and only about 3% shape memory effect and these have hampered their applications. It is well known that there are three methods to improve the shape memory properties of high-temperature SMAs: (a) cold rolling + annealing; (b) adding another element to the alloy; (c) aging. These methods are not suitable to improve the properties of Ti-Ni-Hf alloys. In this paper, a method of conditioning Ni-rich Ti-Ni-Hf alloys as high-temperature SMAs by aging is presented. For Ni-rich Ti 80-x Ni x Hf 20 alloys (numbers indicate at.%) the phase transformation temperatures are on average increased by more than 100 K by aging at 823 K for 2 h. Especially for those alloys with Ni contents less than 50.6 at.%, the martensitic transformation start temperatures (M s ) are higher than 473 K after aging. Transmission electron microscopy shows the presence of (Ti + Hf) 3 Ni 4 precipitates after aging. Compared with the precipitation of Ti 3 Ni 4 particles in Ni-rich Ti-Ni alloys, the precipitation of (Ti + Hf) 3 Ni 4 particles in Ni-rich Ti-Ni-Hf alloys needs higher temperatures and longer times

Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

International Nuclear Information System (INIS)

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.

2005-01-01

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented

Thermal expansion studies on HfO2-Gd2O3 system

International Nuclear Information System (INIS)

Panneerselvam, G.; Antony, M.P.; Nagarajan, K.

2014-01-01

A series of solid solutions containing GdO 1.5 in HfO 2 , (Hf 1-y Gd y ) O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out using room temperature X-ray diffraction measurements

Fe substitution and pressure effects on superconductor Re6Hf

Science.gov (United States)

Yang, Jinhu; Guo, Yang; Wang, Hangdong; Chen, Bin

2018-04-01

Polycrystalline samples of (Re1-xFex) 6Hf were synthesized by arc-melting method and the phase purity of the samples was confirmed by powder X-ray diffraction method. In this paper, we report the Fe substitution and pressure effect on non-centrosymmetric superconductor Re6Hf. The superconducting transition temperature, TC, is confirmed by the measurements of magnetic susceptibility, electrical resistivity for x ≤ 0.22 samples with the temperature down to 2 K. We find that the TC is suppressed with the increase of Fe content. The upper critical field Hc2 is larger than the value predicted by the WHH theory and shows a linear temperature dependence down to 2 K. When upon the application of external pressure up to 2.5 GPa, the TC decreases monotonically at a rate dlnTC/dP of 0.01 GPa-1.

A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

International Nuclear Information System (INIS)

Huang, Y.J.; Shen, J.; Sun, J.F.; Yu, X.B.

2007-01-01

The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti 41.5 Zr 2.5 Hf 5 Cu 42.5-x Ni 7.5 Si 1 Sn x (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy. The activation energies for glass transition and crystallization for Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy also possesses superior mechanical properties

Qualification of a Multi-Channel Infrared Laser Absorption Spectrometer for Monitoring CO, HCl, HCN, HF, and CO2 Aboard Manned Spacecraft

Science.gov (United States)

Briggs, Ryan M.; Frez, Clifford; Forouhar, Siamak; May, Randy D.; Meyer, Marit E.; Kulis, Michael J.; Berger, Gordon M.

2015-01-01

Monitoring of specific combustion products can provide early-warning detection of accidental fires aboard manned spacecraft and also identify the source and severity of combustion events. Furthermore, quantitative in situ measurements are important for gauging levels of exposure to hazardous gases, particularly on long-duration missions where analysis of returned samples becomes impractical. Absorption spectroscopy using tunable laser sources in the 2 to 5 micrometer wavelength range enables accurate, unambiguous detection of CO, HCl, HCN, HF, and CO2, which are produced in varying amounts through the heating of electrical components and packaging materials commonly used aboard spacecraft. Here, we report on calibration and testing of a five-channel laser absorption spectrometer designed to accurately monitor ambient gas-phase concentrations of these five compounds, with low-level detection limits based on the Spacecraft Maximum Allowable Concentrations. The instrument employs a two-pass absorption cell with a total optical pathlength of 50 cm and a dedicated infrared semiconductor laser source for each target gas. We present results from testing the five-channel sensor in the presence of trace concentrations of the target compounds that were introduced using both gas sources and oxidative pyrolysis (non-flaming combustion) of solid material mixtures.

Lattice Boltzmann Simulation of the Hydrodynamic Entrance Region of Rectangular Microchannels in the Slip Regime

Directory of Open Access Journals (Sweden)

Niya Ma

2018-02-01

Full Text Available Developing a three-dimensional laminar flow in the entrance region of rectangular microchannels has been investigated in this paper. When the hydrodynamic development length is the same magnitude as the microchannel length, entrance effects have to be taken into account, especially in relatively short ducts. Simultaneously, there are a variety of non-continuum or rarefaction effects, such as velocity slip and temperature jump. The available data in the literature appearing on this issue is quite limited, the available study is the semi-theoretical approximate model to predict pressure drop of developing slip flow in rectangular microchannels with different aspect ratios. In this paper, we apply the lattice Boltzmann equation method (LBE to investigate the developing slip flow through a rectangular microchannel. The effects of the Reynolds number (1 < Re < 1000, channel aspect ratio (0 < ε < 1, and Knudsen number (0.001 < Kn < 0.1 on the dimensionless hydrodynamic entrance length, and the apparent friction factor, and Reynolds number product, are examined in detail. The numerical solution of LBM can recover excellent agreement with the available data in the literature, which proves its accuracy in capturing fundamental fluid characteristics in the slip-flow regime.

Energy saving in tunnel entrance lighting.

NARCIS (Netherlands)

Schreuder, D.A. & Swart, L.

1993-01-01

Tunnel entrances may present themselves during the day as a "black hole" in which no details can be perceived. In order to ensure safe and comfortable driving at high speeds, the entrance zone must be lit to a high luminance level. Modern tunnel lighting technology is focused on two aspects:

HF i dag

DEFF Research Database (Denmark)

Lindstrøm, Maria Duclos; Simonsen, Birgitte

2008-01-01

Notatet er lavet på baggrund af uddannelsesbiografiske dybdeinterviews med kursister på toårigt HF. Indenfor rammerne af en pilotundersøgelse identificerer notatet fire gennemgående profiler: De pragmatiske, de fagligt usikre, second chance-kursisterne, og de HF-kursister, som har HF som first...

Investigation of Size Effects to the Mixing Performance on the X-shaped Micro-Channels

Directory of Open Access Journals (Sweden)

S Tu

2016-09-01

Full Text Available Due to the developing of micro-electro-mechanical-system, MEMS, the fabrication of the microminiaturization devices becomes obviously important. The advances in the basic understanding of fluid physics have opened an era of application of fluid dynamics systems using microchannels. The purpose of this study is to research the flow transport phenomenon by employing different kinds of micro-channel sizing in X-shaped micro-channels. As the working fluid, water is injected to microchannel at different mass flow rate. Over a wide range of flow condition, 1.06 < Re < 514, in X-shaped micro-channels, the mixture performances of numerical simulation, flow visualization, and temperature distribution remain the same. At the same mass flow rate as the Reynolds number below 112.53, the biggest channel size had the slowest flow velocity and got the best mixing performance; as the Reynolds number above 112.53, the smaller the channel sizing, the lower the pressure drops and the faster velocity becomes. The transition form early from laminar flow, the unsteady flow is an advantage for mixing in the limited mixing area, therefore 0.7 mm got the best mixing performance. It is clear that the size of the channel plays an important role in the X-shaped micro-channels.

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

Science.gov (United States)

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Proton induced L{sub 1}, L{sub 2}, L{sub 3}-sub-shell X-ray production cross sections of Hf and Au

Energy Technology Data Exchange (ETDEWEB)

Bertol, A.P.L., E-mail: anapaula.bertol@gmail.com [Programa de Pós-graduação em Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Hinrichs, R. [Programa de Pós-graduação em Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Instituto de Geociências, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Vasconcellos, M.A.Z. [Programa de Pós-graduação em Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil)

2015-11-15

Experimental data for proton induced X-ray production cross sections of L-sub-shells of Hf and Au were obtained, in order to contribute to the existing data sets and to support refinements of the ECPSSR theory. X-ray emissions of mono-elemental 10 nm films of Hf and Au were excited with 0.7–1.5 MeV protons. The measured L-line spectra were fitted assuming Gaussian shapes and constraining peak positions and line widths. The transition energy values used to establish peak positions were based on values proposed in the literature, while the line widths were matched to the detector resolution, obtained independently. The intensity of each line was obtained from the adjusted areas, without the use of emission rates. The line intensities were summed in α, β, γ, and ℓ groups to validate the measurements by comparison with existing data, and in L{sub 1}, L{sub 2}, L{sub 3}-sub-shells for comparison with ECPSSR-UA theory. Ratios of the emission rates of lines of the same sub-shell were obtained and compared with the data from the literature.

Comparison of HfCl{sub 4}, HfI{sub 4}, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO{sub 2} films deposited by ALD: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Cortez-Valadez, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Fierro, C.; Farias-Mancilla, J.R. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); Vargas-Ortiz, A. [Universidad Autónoma de Sinaloa, Facultad de Ingeniería Mochis, Ciudad Universitaria, C.P. 81223 Los Mochis, Sinaloa (Mexico); Flores-Acosta, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Ramírez-Bon, R. [Centro de Investigación y Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, 76001 Querétaro, Qro. (Mexico); Enriquez-Carrejo, J.L. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); and others

2016-06-15

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO{sub 2} films grown by atomic layer deposition (ALD) after reaction with OH{sup −} ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl{sub 4} (hafnium tetrachloride), HfI{sub 4} (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

International Nuclear Information System (INIS)

Li Yongliang; Xu Qiuxia

2010-01-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Kolomiiets, Nadiia M.; Afanas' ev, Valery V.; Madia, Oreste; Stesmans, Andre [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001 Leuven (Belgium); Cott, Daire J.; Collaert, Nadine [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Thean, Aaron [Imec, Kapeldreef 75, 3001 Leuven (Belgium); National University of Singapore (Singapore)

2016-12-15

By analyzing internal photoemission of electrons from Si/SiO{sub x}-passivated Ge into insulating HfO{sub 2} we found that insertion of additional La interlayer between SiO{sub x} and HfO{sub 2} leads to dramatic increase (more than by factor of 20) of the barrier transparency. However, no measurable variation of the interface barrier height is observed suggesting that La induces intermixing of near-interface oxide stack resulting in development of additional density of states corresponding to conduction band of LaO{sub x} and HfO{sub x} sub-networks. At the same time, photoemission results indicate the presence of discrete positive charges in the near-interface oxide layer which may explain the observed ∝1 V shift of capacitance-voltage curves. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Understanding the conductive channel evolution in Na:WO3-x-based planar devices

Science.gov (United States)

Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

2015-03-01

An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the

First results on the sorption behaviour of Rutherfordium from HCl/HF containing aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Schumann, D.; Nitsche, H. [Technische Univ. Dresden (Germany); Taut, S. [Forschungszentrum Rossendorf e.V. (FZR), Dresden (Germany); Jost, D.T.; Gaeggeler, H.W. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Yakushev, A.B.; Buklanov, G.V.; Domanov, V.P.; Lien Din Thi [Joint Inst. for Nuclear Research, Dubna (Russian Federation); Kubica, B.; Misiak, R.; Szeglowski, Z. [NINP Cracow (Poland)

1997-09-01

Rutherfordium shows strong sorption on the cation exchanger DOWEX 50x8 at a concentration of 0.1 M HCl/10{sup -2} M HF. This shows that Rf behaves under these conditions differently from Hf and Zr and more like Th under these conditions. (author) 1 fig., 5 refs.

Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

International Nuclear Information System (INIS)

Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

2015-01-01

HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

2012-12-01

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

Evaluation of K x-ray escape and crosstalk in CdTe detectors and multi-channel detectors

International Nuclear Information System (INIS)

Ohtsuchi, Tetsuro; Ohmori, Koichi; Tsutsui, Hiroshi; Baba, Sueki

1995-01-01

The simple structure of CdTe semiconductor detectors facilitates their downsizing, and their possible application to radiographic sensors has been studied. The escape of K X-rays from these detectors increases with reduction of their dimensions and affects the measurements of X- and gamma-ray spectra. K X-rays also produce crosstalk in multi-channel detectors with adjacent channels. Therefore, K X-rays which escape from the detector elements degrade both the precision of energy spectra and spatial resolution. The ratios of escape peak integrated counts to total photon counts for various sizes of CdTe single detectors were calculated for gamma rays using the Monte Carlo method. Also, escape and crosstalk ratios were simulated for the CdTe multi-channel detectors. The theoretical results were tested experimentally for 59.54-keV gamma rays from a 241 Am radioactive source. Results showed that escape ratios for single detectors were strongly dependent on element size and thickness. The escape and crosstalk ratios increased with closer channel pitch. The calculated results showed a good agreement with the experimental data. The calculations made it clear that K X-rays which escaped to neighboring channels induced crosstalk more frequently at smaller channel pitch in multichannel detectors. A radiation shielding grid which blocked incident photons between the boundary channels was also tested by experiment and by calculation. It was effective in reducing the probability of escape and crosstalk

Evaluation of a Model for Predicting the Tidal Velocity in Fjord Entrances

Energy Technology Data Exchange (ETDEWEB)

Lalander, Emilia [The Swedish Centre for Renewable Electric Energy Conversion, Division of Electricity, Uppsala Univ. (Sweden); Thomassen, Paul [Team Ashes, Trondheim (Norway); Leijon, Mats [The Swedish Centre for Renewable Electric Energy Conversion, Division of Electricity, Uppsala Univ. (Sweden)

2013-04-15

Sufficiently accurate and low-cost estimation of tidal velocities is of importance when evaluating a potential site for a tidal energy farm. Here we suggest and evaluate a model to calculate the tidal velocity in fjord entrances. The model is compared with tidal velocities from Acoustic Doppler Current Profiler (ADCP) measurements in the tidal channel Skarpsundet in Norway. The calculated velocity value from the model corresponded well with the measured cross-sectional average velocity, but was shown to underestimate the velocity in the centre of the channel. The effect of this was quantified by calculating the kinetic energy of the flow for a 14-day period. A numerical simulation using TELEMAC-2D was performed and validated with ADCP measurements. Velocity data from the simulation was used as input for calculating the kinetic energy at various locations in the channel. It was concluded that the model presented here is not accurate enough for assessing the tidal energy resource. However, the simplicity of the model was considered promising in the use of finding sites where further analyses can be made.

Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

2015-01-23

HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

Relativistic electron-beam transport in curved channels

International Nuclear Information System (INIS)

Vittitoe, C.N.; Morel, J.E.; Wright, T.P.

1982-01-01

Collisionless single particle trajectories are modeled for a single plasma channel having one section curved in a circular arc. The magnetic field is developed by superposition of straight and curved channel segments. The plasma density gives charge and beam-current neutralization. High transport efficiencies are found for turning a relativistic electron beam 90 0 under reasonable conditions of plasma current, beam energy, arc radius, channel radius, and injection distributions in velocity and in position at the channel entrance. Channel exit distributions in velocity and position are found consistent with those for a straight plasma channel of equivalent length. Such transport problems are important in any charged particle-beam application constrained by large diode-to-target distance or by requirements of maximum power deposition in a confined area

Brillouin scattering, DSC, dielectric and X-ray diffraction studies of phase transitions in antiferroelectric PbHfO{sub 3}:Sn

Energy Technology Data Exchange (ETDEWEB)

Mączka, Mirosław, E-mail: m.maczka@int.pan.wroc.pl [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław 2 (Poland); Kim, Tae Hyun [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Gągor, Anna [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław 2 (Poland); Jankowska-Sumara, Irena [Institute of Physics, Pedagogical University, ul. Podchorążych 2, 30-084 Kraków (Poland); Majchrowski, Andrzej [Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Kojima, Seiji [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

2015-02-15

Highlights: • Phase transition mechanisms were studied in antiferroelectric PbHf{sub 0.975}Sn{sub 0.025}O{sub 3.} • Acoustic phonons showed anomalies at 472 and 426 K due to phase transitions. • Brillouin data showed evidence for presence of polar clusters in paraelectric phase. • An order-disorder mechanism of the PE to AFE2 transition was proved. - Abstract: Specific heat, dielectric, powder X-ray diffraction and Brillouin scattering studies of phase transitions in antiferroelectric PbHf{sub 0.975}Sn{sub 0.025}O{sub 3} crystal were performed. The specific heat data revealed clear anomalies at T{sub 1} = 473.5 and T{sub 2} = 426.3 K on cooling, which could be attributed to onset of first order phase transitions from the paraelectric (PE) phase to an intermediate antiferroelectric phase (AFE2) and the AFE2 phase to another antiferroelectric phase (AFE1), respectively. The estimated entropy changes at T{sub 1} and T{sub 2} pointed to mainly an order-disorder and displacive character of these transitions, respectively. X-ray diffraction data showed a complex superstructure of the intermediate phase with a = 11.895(6) Å, b = 11.936(4) Å, c = 8.223(3) Å at 453 K. Brillouin studies revealed pronounced softening of longitudinal acoustic (LA) mode in the PE phase associated with its broadening. The broadening and softening exhibited maximum values at T{sub 1}. Additional acoustic anomalies, that is, abrupt frequency shifts for LA and transverse acoustic (TA) modes were also observed at T{sub 2}. Brillouin scattering data also showed presence of a broad central peak (CP) that exhibited highest intensity at T{sub 1}. The observed temperature dependences of acoustic modes and CP indicate order-disorder character of the FE to AFE2 phase transition and importance of polar precursor clusters in the PE phase. The obtained data also suggest that the intermediate antiferroelectric phases in Sn{sup 4+} doped PbHfO{sub 3} and PbZrO{sub 3} may have very similar structures

HF/DF chemical labs

International Nuclear Information System (INIS)

Meinzer, R.A.

1987-01-01

This paper provides the essential details to understand and design HF/DF and related types of chemical lasers. The basic operation of the HF/DF chemical laser is described. The details of the excitation chemistry are presented and the pertinent laser physics is described. A description of the various laser components is given and the analytical models for the HF/DF chemical laser are discussed. A brief description of the chain reaction HF/DF chemical laser is offered

Analysis of sodium metal by X-ray fluorescence spectrometry (I). Determination of Hf, Mo, Nb, Ta, Ti, V and Zr; Analisis de sodio metal por espectrometria de fluorescencia de rayos X. Determinacion de Hf, Mo, Nb, Ta, Ti, V y Zr

Energy Technology Data Exchange (ETDEWEB)

Diaz-Guerra, J P

1981-07-01

A method allowing the determination of trace quantities of Hf, Mo, Nb, Ta, Ti, Vi and Zr in sodium metal previous transformation into Na{sub 2}S0{sub 4} is described. The enrichment of the impurities is performed through a coprecipitation technique in sulfuric medium by using Fe{sup 3}+ as a collector and cupferron or phenyfluorone as the precipitating reagent. The matrix influence and the best concentration of the collector (10/{mu}/ml), adequate pH (1,3 or 4, respectively) and optimum filter type (Millipore BSWP02500 or BDWP04700, respectively) have been studied, as well as the precipitation recoveries corresponding to the reagent above. It has been demonstrated the batter efficiency of the cupferron for determining all the Impurities. Detection limits range from 0.01 to 0.2 ppm., depending on the element, for samples 4 g in weight. An automatic spectrometer attached to a 16 K minicomputer and X-ray tube with a gold anode (2250-2700 W) are used. The Interferences between the lines ZrK{alpha} (2{sup n}d order) - HfL{alpha} and TiK{beta} - VK {alpha} have been studied and the respective correction coefficients have been deduced. (Author) 8 refs.

Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

Energy Technology Data Exchange (ETDEWEB)

Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

2017-12-15

HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

International Nuclear Information System (INIS)

Wang Chunyu; Donnelly, Vincent M.

2008-01-01

The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

Energy Technology Data Exchange (ETDEWEB)

Huang, Y.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shen, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: junshen@hit.edu.cn; Sun, J.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yu, X.B. [Lab of Energy Science and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: yuxuebin@hotmail.com

2007-01-16

The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 42.5-x}Ni{sub 7.5}Si{sub 1}Sn {sub x} (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy. The activation energies for glass transition and crystallization for Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy also possesses superior mechanical properties.

HF laser

International Nuclear Information System (INIS)

Suzuki, Kazuya; Iwasaki, Matae

1977-01-01

A review is made of the research and development of HF chemical laser and its related work. Many gaseous compounds are used as laser media successfully; reaction kinetics and technological problems are described. The hybrid chemical laser of HF-CO 2 system and the topics related to the isotope separation are also included. (auth.)

High-temperature grain size stabilization of nanocrystalline Fe–Cr alloys with Hf additions

Energy Technology Data Exchange (ETDEWEB)

Li, Lulu, E-mail: lli18@ncsu.edu; Saber, Mostafa; Xu, Weizong; Zhu, Yuntian; Koch, Carl C.; Scattergood, Ronald O.

2014-09-08

The influence of 1–4 at% Hf additions on the thermal stability of mechanically alloyed nanocrystalline Fe–14Cr alloys was studied in this work. XRD-calculated grain size and microhardness results were reported versus isochronal annealing treatments up to 1100 °C. Microstructural evolution was investigated using channeling contrast FIB imaging and TEM. Grain size of samples with 4 at% Hf was found to be maintained in the nanoscale range at temperatures up to 1000 °C. Zener pinning was considered as a major source of high temperature grain size stabilization. By comparing the Orowan strengthening contribution to the total hardness, the deviation of grain size predictions from the actual grain size in Fe–14Cr–4Hf suggests the presence of thermodynamic stabilization by the solute segregation to grain boundaries (GBs). A predictive thermodynamic model indicates that the thermodynamic stabilization can be expected.

Experience with ActiveX control for simple channel access

International Nuclear Information System (INIS)

Timossi, C.; Nishimura, H.; McDonald, J.

2003-01-01

Accelerator control system applications at Berkeley Lab's Advanced Light Source (ALS) are typically deployed on operator consoles running Microsoft Windows 2000 and utilize EPICS[2]channel access for data access. In an effort to accommodate the wide variety of Windows based development tools and developers with little experience in network programming, ActiveX controls have been deployed on the operator stations. Use of ActiveX controls for use in the accelerator control environment has been presented previously[1]. Here we report on some of our experiences with the use and development of these controls

A theoretical study of the molecular structures and vibrational spectra of the N 2O⋯(HF) 2

Science.gov (United States)

de Lima, Nathália B.; Ramos, Mozart N.

2012-01-01

Theoretical calculations using both the MP2 and B3LYP levels of calculation with a 6-311++G(3df,3pd) basis set have been performed to determine stable structures and molecular properties for the H-bonded complexes involving nitrous oxide (N 2O) and two HF molecules. Five complex have been characterized as minima since no imaginary frequency was found. Three complex are predicted to be relatively more stable with binding energies varying from 14 kJ mol -1 to 23 kJ mol -1 after BSSE and ZPE corrections. Our calculations have revealed that the second complexation with HF preferably occurs with the first complexed HF molecule, i.e., forming the X⋯H sbnd F⋯H sbnd F skeleton with X = O or N instead the F sbnd H⋯N sbnd N sbnd O⋯H sbnd F one. As expected, the H sbnd F chemical bonds are increased after complexation due to intermolecular charge transfer from "n" isolated pair of the X atom (X = N, O or F) to the σ ∗ anti-bonding orbital of HF. For the strongly bounded complex, the doubly complexed HF molecule acts as a bridge between the two end molecules while transferring electrons from N 2O to HF. Both possess the same amount of residual charge but with opposite signs. The H sbnd F stretching frequency of the monoprotic acid is shifted downward after complexation whereas its IR intensity is much enhanced. This increase has been adequately interpreted in terms of equilibrium hydrogen charge and charge-flux associated to the H sbnd F stretching using the CCFOM model for infrared intensities. This procedure has also allowed to analyze the new vibrational modes arising upon H-bond formation, especially those associated with the out-of-plane and in-plane HF bending modes, which are pure rotations in the HF isolated molecule.

Axial channeling of uttrarelativistic electrons

Energy Technology Data Exchange (ETDEWEB)

Telegin, V.I.; Khokonov, M.Kh. (Moskovskij Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel' skij Inst. Yadernoj Fiziki)

1982-07-01

The dynamics of motion of ultrarelativistic electrons under axial channeling conditions is investigated. The analysis is based on the solution of the kinetic equation obtained recently by Beloshitsky and Kumakhov. The particle dechanneling function is investigated as depending on the type of a crystal, particle energy and angle of entrance into the single crystal. It is found that for most of the beam the major diffusion mechanism is scattering by electrons. It is shown that an optimal depth range exists for which the fraction of channeled particles sharply increases at the expense of the quasi-channeled particles. In a number of cases the dechanneling length for crystals with high atomic numbers may be greater than that of light elements.

Axial channeling of uttrarelativistic electrons

International Nuclear Information System (INIS)

Telegin, V.I.; Khokonov, M.Kh.

1982-01-01

The dynamics of motion of ultrarelativistic electrons under axial channeling conditions is investigated. The analysis is based on the solution of the kinetic equation obtained recently by Beloshitsky and Kumakhov. The particle dechanneling function is investigated as depending on the type of a crystal, particle energy and angle of entrance into the single crystal. It is found that for most of the beam the major diffusion mechanism is scattering by electrons. It is shown that an optimal depth range exists for which the fraction of channeled particles sharply increases at the expense of the quasi-channeled particles. In a number of cases the dechanneling length for crystals with high atomic numbers may be greater than that of light elements

Dose on the entrance surface of thyroid, crystalline lens and gonads during the chest X-rays studies; Dosis en la superficie de entrada de tiroides, cristalino y gonadas durante los examenes radiologicos de torax

Energy Technology Data Exchange (ETDEWEB)

Gonzalez G, R.; Guerra M, J. A.; Pinedo S, A.; Hernandez O, M.; Duran M, H. A.; Salas L, M. A.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98000 Zacatecas (Mexico); Rivera M, T. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, IPN, Av. Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Azorin N, J. [Universidad Autonoma Metropolita, Unidad Iztapalapa, Av. San Rafael Atlixco 186, 09340 Mexico D. F. (Mexico)], e-mail: rgg_df@hotmail.com

2009-10-15

There were a measurement series in General Hospital of Fresnillo in X-rays department in areas of X-1 and X-2 ray rooms and in a neonatal intensive care unit 2, the dose was determined on the entrance surface into eyes, thyroid and gonads for patients undergoing to X-rays study of tele chest by thermoluminescent dosimetry. 5 dosemeters were used in each of the scans, found the following dose ranges 20+{sub -} 23 {mu}Gy to 350 +{sub -} 41 {mu}Gy. With results we can conclude that the used procedures and the calibration equipment are adequate. (Author)

Influence of some metal substitutions on the superconducting behaviour of molybdenum borocarbide. [Mo/sub 2-x/M/sub x/BC; M = Zr, Nb, Rh, Hf, Ta, or W

Energy Technology Data Exchange (ETDEWEB)

Lejay, P.; Chevalier, B.; Etourneau, J.; Hagenmuller, P. [Bordeaux-1 Univ., 33 - Talence (France)

1981-11-15

The superconducting properties of the Mosub(2-x)Msub(x)BC borocarbides (M equivalent to Zr, Nb, Rh, Hf, Ta, W) are reported. They have an Mo/sub 2/BC-type structure with orthorhombic symmetry and the space group Cmcm. Stoichiometric powder samples were prepared by arc melting. A large single crystal of Mo/sub 2/BC was obtained by a Czochralski-type method. The upper limit of x depends mainly on the size of the M atoms. A study of the magnetization as a function of field at different temperatures shows that all borocarbides are type II superconductors. Resistivity measurements give generally a critical temperature Tsub(cr) above 4.2 K. Tsub(cr) and the critical fields Hsub(c2) increase for rhodium substitution but decrease in other cases. For comparison the superconducting properties are discussed in terms of the valence electron concentration and the molar volume.

Alternative Mode of E-Site tRNA Binding in the Presence of a Downstream mRNA Stem Loop at the Entrance Channel.

Science.gov (United States)

Zhang, Yan; Hong, Samuel; Ruangprasert, Ajchareeya; Skiniotis, Georgios; Dunham, Christine M

2018-03-06

Structured mRNAs positioned downstream of the ribosomal decoding center alter gene expression by slowing protein synthesis. Here, we solved the cryo-EM structure of the bacterial ribosome bound to an mRNA containing a 3' stem loop that regulates translation. Unexpectedly, the E-site tRNA adopts two distinct orientations. In the first structure, normal interactions with the 50S and 30S E site are observed. However, in the second structure, although the E-site tRNA makes normal interactions with the 50S E site, its anticodon stem loop moves ∼54 Å away from the 30S E site to interact with the 30S head domain and 50S uL5. This position of the E-site tRNA causes the uL1 stalk to adopt a more open conformation that likely represents an intermediate state during E-site tRNA dissociation. These results suggest that structured mRNAs at the entrance channel restrict 30S subunit movement required during translation to slow E-site tRNA dissociation. Copyright © 2018 Elsevier Ltd. All rights reserved.

Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices.

Science.gov (United States)

Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

2015-04-14

An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO(3-x)) films on a soda-lime glass substrate, from which Na(+) diffuses into the WO(3-x) films during the deposition. The entire process of Na(+) migration driven by an alternating electric field is visualized in the Na-doped WO(3-x) films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na(+) mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.

Effect of Chemical Composition on The Microstructure and High-Temperature Properties of Ti-Ni-Hf High-Temperature Shape Memory Alloys

Energy Technology Data Exchange (ETDEWEB)

Choi, Seong-Woo; Lee, Hak-Sung; Jeon, Yeong-Min; Yeom, Jong-Taek; Kim, Seong-Woong; Park, Chan-Hee; Hong, Jae-Keun; Oh, Chang-Seok [Korea Institute of Materials Science, Changwon (Korea, Republic of); Nam, Tae-Hyun [Gyeongsang National University, Jinju (Korea, Republic of); Kim, Jeoung Han [Hanbat National University, Daejeon (Korea, Republic of)

2015-03-15

The effect of Ni and Hf content on the microstructure, phase transformation, and hot workability of Ti-Ni-Hf high-temperature shape memory alloys (SMAs) were investigated. Twelve different Ti-xNi (x=49, 50.2, 50.5, 50.8 at%)-yHf (y=10, 12, 14 at%) SMA ingots were prepared by vacuum arc re-melting, and then analyzed by SEM, DSC, TEM, and XRD after heat treatment. Precipitation behavior was mostly dependent on Ni content rather than Hf content. The effect of homogenization treatment on the particle precipitation and phase transformation behavior was studied. We also found that hot workability was greatly dependent on the solidification structure of the austenite phase.

Closed-cycle 1-kHz-pulse-repetition-frequency HF(DF) laser

Science.gov (United States)

Harris, Michael R.; Morris, A. V.; Gorton, Eric K.

1998-05-01

We describe the design and performance of a closed cycle, high pulse repetition frequency HF(DF) laser. A short duration, glow discharge is formed in a 10 SF6:1 H2(D2) gas mixture at a total pressure of approximately 110 torr. A pair of profiled electrodes define a 15 X 0.5 X 0.5 cm3 discharge volume through which gas flow is forced in the direction transverse to the optical axis. A centrifugal fan provides adequate gas flow to enable operation up to 3 kHz repetition frequency. The fan also passes the gas through a scrubber cell in which ground state HF(DF) is eliminated from the gas stream. An automated gas make-up system replenishes the spent fuel gases removed by the scrubber. Total gas admission is regulated by monitoring the system pressure, whilst the correct fuel balance is maintained through measurement of the discharge voltage. The HF(DF) generation rate is determined to be close to 5 X 1019 molecules per second per watt of laser output. Typical mean laser output powers of up to 3 watts can be delivered for extended periods of time. The primary limitation to life is found to be the discharge pre- ionization system. A distributed resistance corona pre- ionizer is shown to be advantageous when compared with an alternative arc array scheme.

Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2010-05-31

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Thermal relaxation of magnetic clusters in amorphous Hf57Fe43 alloy

International Nuclear Information System (INIS)

Pajic, Damir; Zadro, Kreso; Ristic, Ramir; Zivkovic, Ivica; Skoko, Zeljko; Babic, Emil

2007-01-01

The magnetization processes in binary magnetic/non-magnetic amorphous alloy Hf 57 Fe 43 are investigated by the detailed measurement of magnetic hysteresis loops, temperature dependence of magnetization, relaxation of magnetization and magnetic ac susceptibility, including a nonlinear term. Blocking of magnetic moments at lower temperatures is accompanied by the slow relaxation of magnetization and magnetic hysteresis loops. All of the observed properties are explained by the superparamagnetic behaviour of the single domain magnetic clusters inside the non-magnetic host, their blocking by the anisotropy barriers and thermal fluctuation over the barriers accompanied by relaxation of magnetization. From magnetic viscosity analysis based on thermal relaxation over the anisotropy barriers it is found that magnetic clusters occupy the characteristic volume from 25 up to 200 nm 3 . The validity of the superparamagnetic model of Hf 57 Fe 43 is based on the concentration of iron in the Hf 100-x Fe x system that is just below the threshold for long range magnetic ordering. This work also throws more light on the magnetic behaviour of other amorphous alloys

Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

2012-01-01

Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

HF-laser program

International Nuclear Information System (INIS)

Anon.

1978-01-01

Sandia's HF-laser program for FY 77 and FY 78 was revised in June 1977 in order to meet several new program milestones. Research progress is reported on: objective of HF oscillator-amplifier studies using H 2 -F 2 gas mixtures; characteristics of large-volume oscillator using H 2 -F 2 mixtures; characteristics of large-volume amplifier using H 2 -F 2 mixtures; experimental results of the oscillator-amplifier study; objective of high-quality discharge-initiated SF 6 -HI oscillator-preamplifier system; pin-discharge-initiated oscillator and first beam expander; fast-discharge-initiated preamplifiers; reflecting beam expanders for oscillator-preamplifier system; beam quality of discharge-initiated oscillator-preamplifier system; short pulse option for discharge initiated SF 6 -HI system; H 2 -F 2 electron-beam-initiated oscillator-preamplifier system; chamber for HF-laser focusing experiments; computer study of parasitic oscillations in HF amplifiers and oscillators; kinetics upgrade of HF-laser code; repetitivey ignited flowing H 2 -F 2 -O 2 mixtures; spontaneous detonations in multiatmosphere H 2 -F 2 -O 2 mixtures; high-pressure H 2 -F 2 laser studies; and time sequenced energy extraction on the high xenon laser

Robustness of digitally modulated signal features against variation in HF noise model

Directory of Open Access Journals (Sweden)

Shoaib Mobien

2011-01-01

Full Text Available Abstract High frequency (HF band has both military and civilian uses. It can be used either as a primary or backup communication link. Automatic modulation classification (AMC is of an utmost importance in this band for the purpose of communications monitoring; e.g., signal intelligence and spectrum management. A widely used method for AMC is based on pattern recognition (PR. Such a method has two main steps: feature extraction and classification. The first step is generally performed in the presence of channel noise. Recent studies show that HF noise could be modeled by Gaussian or bi-kappa distributions, depending on day-time. Therefore, it is anticipated that change in noise model will have impact on features extraction stage. In this article, we investigate the robustness of well known digitally modulated signal features against variation in HF noise. Specifically, we consider temporal time domain (TTD features, higher order cumulants (HOC, and wavelet based features. In addition, we propose new features extracted from the constellation diagram and evaluate their robustness against the change in noise model. This study is targeting 2PSK, 4PSK, 8PSK, 16QAM, 32QAM, and 64QAM modulations, as they are commonly used in HF communications.

High-aspect-ratio HfC nanobelts accompanied by HfC nanowires: Synthesis, characterization and field emission properties

Energy Technology Data Exchange (ETDEWEB)

Tian, Song, E-mail: tiansong22@126.com [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); School of Materials Science and Engineering, Chongqing Jiaotong University, Chongqing 400074 (China); Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Li, Hejun, E-mail: lihejun@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China)

2017-04-30

Highlights: • HfC naobelts accompanied by HfC nanowires were synthesized by a catalytic CVD method. • HfC nanobelts as a novel structure of HfC ceramic are reported for the first time. • HfC nanobelts have 100–200 μm in lengths and reach up to 10 μm in widths. • The synthesized product is promising field nanoemitters. - Abstract: As a key refractory carbide, hafnium carbide (HfC) is commonly used as structural materials while the field emission (FE) application of HfC in the field of vacuum microelectronics is almost the only one for functional material purposes. Based on its outstanding physical and chemical characteristics, HfC is identified as a potential candidate with satisfactory mechanical properties and long-term and/or high-temperature FE stability for future applications in high-performance field emitters. However, the development of HfC in various FE applications is hindered because it is not facile to fabricate large-scale low-dimensional HfC field nanoemitters. Herein, High-aspect-ratio HfC nanobelts accompanied by HfC nanowires were synthesized on a large scale by a traditional and simple catalytic chemical vapor deposition (CVD) method. Classical vapor–liquid–solid (VLS) theory was employed to explain the growth of the HfC nanowires and nanobelts along axial direction. The thin HfO{sub 2} shell and thin C layer surrounding the nanostructures might give rise to the diameter fluctuation of HfC nanowires and the width increase of HfC nanobelts in lateral direction. Field emission results show that the high-aspect-ratio HfC nanobelts accompanied by the nanowires are promising field nanoemitters, which exhibit excellent field emission properties with a fairly low turn-on field of ∼1.5 V μm{sup −1} and a low current fluctuation less than ∼10%. This suggests that HfC ceramics with high-aspect-ratio nanostructures are ideal cathode material for various field emission applications.

Interaction of N-hydroxyurea with strong proton donors: HCl and HF

Science.gov (United States)

Sałdyka, Magdalena

2014-11-01

An infrared spectroscopic and MP2/6-311++G(2d,2p) study of strong hydrogen bonded complexes of N-hydroxyurea (NH2CONHOH) with hydrogen halides (HCl and HF) trapped in solid argon matrices is reported. 1:1 and 1:2 complexes between N-hydroxyurea and hydrogen chloride, hydrogen fluoride have been identified in the NH2CONHOH/HCl/Ar, NH2CONHOH/HF/Ar matrices, respectively; their structures were determined by comparison of the spectra with the results of calculations. In the 1:1 complexes, identified for both hydrogen halide molecules, the cyclic structure stabilized by the X-H⋯O and N-H⋯X bonds is present; for the NH2CONHOH⋯HF system another isomeric 1:1 complex is also observed. Two 1:2 complexes were identified for the N-hydroxyurea-hydrogen chloride system characterised by the Cl-H⋯O and N-H⋯Cl bonds. The results of the study evidence that N-hydroxyurea is an oxygen base in the gas-phase with the carbonyl group as the strongest proton acceptor centre in the molecule.

Determination of the rate of HF hydration and the effects of HF on moisture condensation

International Nuclear Information System (INIS)

McCulla, W.H.

1982-01-01

There were four basic questions addressed in this report that relate to the HF interaction in the environment. As to whether HF hydrates in the vapor phase and what the rate of that hydration is, there seems ample evidence that HF hydrates readily in the vapor phase and the rate of that hydration is very fast, i.e., dHF/dt greater than or equal to 25 torr sec -1 . Concerning under what conditions condensation of the hydrate will occur and whether a third body is required for condensation, it was found that HF does effect the dew point or condensation of water and data was presented indicating the extent of that effect. It was also determined that condensation will occur without a third body present. Thus, in attempting to model an HF release for the Safety Analysis Report the hydration of HF and the subsequent heat released may be treated as occurring instantaneously; but the ultimate disposition of the HF will be strongly dependent upon the environmental conditions at the time of the release

Determination of the rate of HF hydration and the effects of HF on moisture condensation

Energy Technology Data Exchange (ETDEWEB)

McCulla, W H

1982-04-30

There were four basic questions addressed in this report that relate to the HF interaction in the environment. As to whether HF hydrates in the vapor phase and what the rate of that hydration is, there seems ample evidence that HF hydrates readily in the vapor phase and the rate of that hydration is very fast, i.e., dHF/dt greater than or equal to 25 torr sec/sup -1/. Concerning under what conditions condensation of the hydrate will occur and whether a third body is required for condensation, it was found that HF does effect the dew point or condensation of water and data was presented indicating the extent of that effect. It was also determined that condensation will occur without a third body present. Thus, in attempting to model an HF release for the Safety Analysis Report the hydration of HF and the subsequent heat released may be treated as occurring instantaneously; but the ultimate disposition of the HF will be strongly dependent upon the environmental conditions at the time of the release.

Further development of a facility for channeling studies: application to lattice location

International Nuclear Information System (INIS)

Lopes, D.R.

1984-08-01

Equipment modifications at the Lawrence Berkeley Laboratory (LBL) Rutherford backscattering facility, including the addition of a high precision goniometer, have been made to enhance the performance of channeling experiments. The angular divergence of the alpha particle beam was also reduced to 0 by improving the collimation. To demonstrate improved channeling capability angular scans were performed about the [100], [110], and [111] axial channels of a 3400 A (100) silicon membrane. Both the minimum yield, chi/sub min/, and the critical angle, psi/sub 1/2/, were consistent with accepted values. A preliminary investigation of the lattice location of cobalt on the (100) silicon surface was undertaken. Approximately 4.5 x 10 15 Co atoms/cm 2 were electron beam deposited on a 3900 A, HF etched silicon membrane in a system using oilless pumps. Preliminary channeling data taken approximately one month later indicated a preferred site for approximately 16% of the cobalt atoms. Channeling data obtained six months later with the new goniometer showed no evidence for a preferred site. Room temperature oxidation between experiments was observed and is thought to have affected the location of the cobalt atoms. 33 references, 15 figures

High-K rotational bands in {sup 174}Hf and {sup 175}Hf

Energy Technology Data Exchange (ETDEWEB)

Gjoerup, N L; Sletten, G [The Niels Bohr Institute, Roskilbe (Denmark); Walker, P M [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Bentley, M A [Daresbury Lab. (United Kingdom); Cullen, D M; Sharpey-Schafer, J F; Fallon, P; Smith, G [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

1992-08-01

High sensitivity experiments with {sup 48}Ca, {sup 18}O and {sup 9}Be induced reactions using the ESSA-30, TESSA-3 and NORDBALL arrays have provided extensive new information on the high spin level structures of {sup 174}Hf and {sup 175}Hf. During the series of experiments, several new bands have been found and most known bands have been extended considerably. Spin and excitation energy ranges for {sup 174}Hf are now {approx} 35 {Dirac_h} and {approx} 13 MeV, respectively, and for {sup 175}Hf ranges are {approx} 30 {Dirac_h} and {approx} 7 MeV. respectively. Several new high-K structures have been found in {sup 174}Hf and the structure of these and the already known high-K bands in both nuclei together with the new Tilted Axis Cranking approach might explain the small K-hindrances observed for K-isomers in this region. (author). 8 refs., 2 figs.

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Science.gov (United States)

Pang, Hua; Deng, Ning

2014-10-01

The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V.

Experimental and numerical study on heat transfer and pressure drop performance of Cross-Wavy primary surface channel

International Nuclear Information System (INIS)

Ma, Ting; Du, Lin-xiu; Sun, Ning; Zeng, Min; Sundén, Bengt; Wang, Qiu-wang

2016-01-01

Highlights: • Naphthalene sublimation experiments were performed for Cross-Wavy channels. • Entrance region has a small effect on unit-averaged heat transfer coefficient of Cross-Wavy channels. • Correlations of Nusselt number and friction factor in Cross-Wavy channel were obtained. • Similar Cross-Wavy channels have similar thermal hydraulic performance. - Abstract: The Cross-Wavy primary surface heat exchanger is one of the most promising candidates for microturbine recuperators. In this paper, naphthalene sublimation experiments are performed for Cross-Wavy channels in a wind tunnel. The experimental results indicate that the entrance region has a small effect on the unit-averaged heat transfer coefficient of whole Cross-Wavy channels. Correlations of Nusselt number and friction factor in the Cross-Wavy channel are obtained. However, only the Cross-Wavy channel with a large equivalent diameter is tested because the actual Cross-Wavy channels are very complicated and small. Therefore, based on the similarity rules, five Cross-Wavy channels with similar structures but different equivalent diameters are further investigated by numerical simulations. The numerical results indicate that the Cross-Wavy channels with similar structures but different equivalent diameters have similar thermal-hydraulic performance in the studied Reynolds number range.

Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

Energy Technology Data Exchange (ETDEWEB)

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine); Rogl, P. [Universitet Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University “Lvivska Politechnika” (Ukraine); Kaczorowski, D. [Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland); Krayovskyy, V. Ya. [National University “Lvivska Politechnika” (Ukraine); Stadnyk, Yu. V.; Horyn, A. M. [Ivan Franko Lviv National University (Ukraine)

2017-02-15

The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

Preparation of HfC single crystals by a floating zone technique

International Nuclear Information System (INIS)

Otani, S.; Tanaka, T.

1981-01-01

HfC single crystals have been prepared using a floating zone technique by controlling the compositions of the initial molten zone and the feed rod. The obtained crystal rods were 6 cm long and 0.9 cm in diameter. The various parts of the crystal rods have nearly constant compositions (C/Hf(ZR) = 0.956-0.977), and do not contain any free carbon. The impurities in the crystal, evaporation product, and starting material were examined by fluorescence X-ray spectroscopy. The refining effect due to evaporation was discussed. (orig.)

Beta decomposition processes in Hf-rich Hf--Nb alloys

International Nuclear Information System (INIS)

Jones, W.B.; Taggart, R.; Polonis, D.H.

1978-01-01

The decomposition of the bcc β-phase by both athermal and isothermal processes has been investigated in Hf-rich Hf--Nb alloys. An all β-phase structure is retained in chill-cast alloys containing 30 to 50 at.% Nb (Cb), although electron diffraction streaking effects and the behavior of the temperature coefficient of electrical resistivity indicate the presence of a bcc lattice instability similar to that reported in solute lean Ti and Zr alloys. Aging a Hf 0 . 65 Nb 0 . 35 alloy at 400 and 600 0 C resulted in the direct precipitation of a fine dispersion of α-phase needles; this morphology differs from the discs of transition α (α/sub t/) which Carpenter et al observed in Nb-rich Nb 0 . 68 Hf 0 . 32 . During continued aging, the needles grow selectively to form colonies or groups of needles in which both the individual needles and the groups of needles have major axes aligned along (110)/sub β/ type directions. The initial α-phase particles exhibit the Burgers orientation relationship with the parent matrix; continued aging changes the electron diffraction patterns in a way that is similar to that observed in aged Ti--Mo and Ti--Mo--Al alloys where they were attributed to the α-phase having a different crystallographic relationship to the β-phase (Type 2 α-phase). The observed changes in the electron diffraction patterns of aged Hf 0 . 65 Nb 0 . 35 cannot be described as resulting from strained Burgers α-phase

Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

International Nuclear Information System (INIS)

Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

2016-01-01

We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer

The relativistic titls of Giza pyramids' entrance-passages

Science.gov (United States)

Aboulfotouh, H.

The tilts of Giza pyramids' entrance-passages have never been considered as if they were the result of relativistic mathematical equations, and never been thought to encode the Earth's obliquity parameters. This paper presents an attempt to retrieve the method of establishing the equations that the pyramids' designer used to quantify the entrance-passages' tilts of these architectonic masterpieces. It proves that the pyramids' designer was able to include the geographic, astronomical and time parameters in one relativistic equation, encoding the date of the design of the Giza pyramids in the tilt of the entrance passage of the great pyramid.

Heat transfer and friction characteristics in steam cooled rectangular channels with rib turbulators

Energy Technology Data Exchange (ETDEWEB)

Gong, Jianying; Gao, Tieyu; Li, Guojun [Xi' an Jiaotong University, Xi' an (China)

2014-01-15

We studied the heat transfer and friction characteristics in steam-cooled rectangular channels with rib turbulators on W side or H side walls in the Reynolds number (Re) range of 10000-80000. Each of the test channels was welded by four stainless steel plates to simulate the actual geometry and heat transfer structure of blade/vane internal cooling passage. The length of the channel L was 1000 mm, the cross section of the channel was 40 mm X 80 mm, and the pitch-to-rib height ratio p/e was kept at 10. The channel blockage ratio (W/H) was 0.047. Results showed that the Nusselt number (Nu) distributions displayed different trends at the entrance region with the increase of Re for the rib turbulators on the W side walls. The heat transfer performance of the rib turbulators on the H side walls was about 24- 27% higher than that on the W side walls at the same pumping power. In addition, semi-empirical correlations for the two cases, rib turbulators on W side walls and rib turbulators on H side walls, were developed based on the heat transfer results, which could be used in the design of the internal cooling passage of new generation steam-cooled gas turbine blade/vane.

High resolution TDPAC measurements on 181Ta in Hf2Fe, Hf2Co and Hf2Rh at high temperature

International Nuclear Information System (INIS)

Cekic, B.; Koicki, S.; Ivanovic, N.; Manasijevic, M.; Koteski, V.; Marjanovic, D.

1998-01-01

The time differential perturbed angular correlation measurements (TDPAC-method ) on 181 Ta ion probe in Hf 2 Co, Hf 2 Fe and Hf 2 Rh intermetallic compounds have been performed at 1170 K, using a fast - slow time spectrometer consisting of two BaF 2 detectors. The results of the measurements show the presence of two independent electric quadrupole interactions, compatible with the crystalline structure of these polycrystalline compounds. (authors)

A DIAMANT Wedding For AFRODITE: Probing Structure and Characterizing Reaction Properties Via Charged-Particle-γ Correlations

International Nuclear Information System (INIS)

Mullins, S. M.; Murray, S. H. T.; Bark, R. A.; Gueorguieva, E.; Lawrie, J. J.; Lieder, E. O.; Lieder, R. M.; Papka, P.; Nyako, B. M.; Timar, J.; Berek, G.; Gal, J.; Kalinka, G.; Molnar, J.; Krasznahorkay, A.; Zolnai, L.; Juhasz, K.; Lipoglavsek, M.; Ntshangase, S. S.; Scheurer, J. N.

2008-01-01

The DIAMANT-AFRODITE combination has been used to investigate incomplete fusions reactions via the 13 C+ 170 Er entrance channel. The intensity of 176 Hf (populated via the α 3n exit channel) is ∼8% of 178 W (populated via 5n evaporation) which is ∼8 times stronger than that expected from complete fusion. Moreover, 2αxn exit channels leading to Yb nuclei are observed with intensities that are ∼30-to-40% of 176 Hf, for which no yield is expected from complete fusion. A comparison of the intensities from the two-α- and one-α-gated data is consistent with fragmentation of the 13 C beam into (α-α-α-n) which suggests that the population of Yb nuclei results from fusion (or ''massive transfer'') of one the break-up α-particles. A campaign of measurements is scheduled for late 2007 with further investigations planned for 2008, including the continuation of the study of superdeformation in 32 S

Isothermal cross-sections of Hf-Sc-Ga(800 deg C) and Hf-Ti-Ga (750 deg C) phase diagrams

International Nuclear Information System (INIS)

Markiv, V.Ya.; Belyavina, N.N.

1981-01-01

Isothermal cross sections of Hf-Sc-Ga (800 deg C) and Hf-Ti-Ga (750 deg C) state diagrams are plotted. The existence of two ternary Hfsub(0.1-0.8)Scsub(0.9)-sub(0.2)Ga and Hfsub(0.8)Scsub(0.2)Gasub(3) phases is stated in the Hf-Sc-Ga system. The crystal structure of these compounds investigated by the powder method belongs to the structural α-MoB and ZrAl 3 types respectively. Continuous rows of (Hf, Sc 5 Ga 5 , (Hf, Ti)Ga 3 and (Hf, Ti)Ga 2 solid solutions are formed in the investigated systems. Essential quantity of the third component dissolve binary Sc 5 Ga 4 , Sc 2 Ga 3 (15 and 30 at % Hf respectively), Hf 5 Ga 4 , HfGa 2 (20, 10 at. % Sc), Hf 5 Ga 4 , HfGa, Hf 5 Ga 3 , Hf 2 Ga 3 (48, 30, 46, 20 at. % Ti) gallides [ru

X-ray yields from high-energy heavy ions channeled through a crystal: their crystal thickness and projectile dependences

International Nuclear Information System (INIS)

Kondo, C.; Takabayashi, Y.; Muranaka, T.; Masugi, S.; Azuma, T.; Komaki, K.; Hatakeyama, A.; Yamazaki, Y.; Takada, E.; Murakami, T.

2005-01-01

X-rays emitted from Ar 17+ , Fe 24+ and Kr 35+ ions of about 400 MeV/u transmitting through a thin Si crystal of about 20 μm thickness have been measured in a planar channeling condition and compared with those in a random incident condition. We have found that the X-ray yield from Ar 17+ ions is larger for the channeling condition than for the random incidence, while those from Fe 24+ and Kr 35+ ions are rather smaller. Such tendencies are explained by considering the projectile dependences of excitation and ionization probabilities together with X-ray emission rates. A crude simulation has qualitatively reproduced these experimental results. When the crystal thickness is small, the X-ray yield is smaller in the channeling condition than in the random incident condition, because excitation is depressed. However, for thicker crystals, the X-ray yield is larger, since the survived population of projectile-bound electrons is larger due to small ionization probabilities under the channeling condition. This inversion occurs at a specific crystal thickness depending on projectile species. Whether the thickness of the used crystal is smaller or larger than the inversion thickness determines enhancement or depression of the X-ray yield in the channeling condition

Distribution of impurity states and charge transport in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Liu, Yuanfeng; Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Page, Alexander [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Sahoo, Pranati [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Stokes, Kevin [The Advanced Materials Research Institute, Department of Physics, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

2016-02-15

Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} samples strongly depends on the doping level (y value) as well as the energy levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 0.995}Sb{sub 0.005} samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors. - Graphical abstract: Electronic transport in semiconducting half-Heusler (HH) matrices containing full-Heusler (FH) nanoinclusions strongly depends on the energy distribution of impurity states within the HH matrix with respect to the magnitude of the potential energy barrier at the HH/FH interfaces. - Highlights: • Coherent nanostructures enhanced thermoelectric behavior of half-Heusler alloys. • Nanostructures act as energy filter of

Contribution of two-pore K+ channels to cardiac ventricular action potential revealed using human iPSC-derived cardiomyocytes.

Science.gov (United States)

Chai, Sam; Wan, Xiaoping; Nassal, Drew M; Liu, Haiyan; Moravec, Christine S; Ramirez-Navarro, Angelina; Deschênes, Isabelle

2017-06-01

Two-pore K + (K 2p ) channels have been described in modulating background conductance as leak channels in different physiological systems. In the heart, the expression of K 2p channels is heterogeneous with equivocation regarding their functional role. Our objective was to determine the K 2p expression profile and their physiological and pathophysiological contribution to cardiac electrophysiology. Induced pluripotent stem cells (iPSCs) generated from humans were differentiated into cardiomyocytes (iPSC-CMs). mRNA was isolated from these cells, commercial iPSC-CM (iCells), control human heart ventricular tissue (cHVT), and ischemic (iHF) and nonischemic heart failure tissues (niHF). We detected 10 K 2p channels in the heart. Comparing quantitative PCR expression of K 2p channels between human heart tissue and iPSC-CMs revealed K 2p 1.1, K 2p 2.1, K 2p 5.1, and K 2p 17.1 to be higher expressed in cHVT, whereas K 2p 3.1 and K 2p 13.1 were higher in iPSC-CMs. Notably, K 2p 17.1 was significantly lower in niHF tissues compared with cHVT. Action potential recordings in iCells after K 2p small interfering RNA knockdown revealed prolongations in action potential depolarization at 90% repolarization for K 2p 2.1, K 2p 3.1, K 2p 6.1, and K 2p 17.1. Here, we report the expression level of 10 human K 2p channels in iPSC-CMs and how they compared with cHVT. Importantly, our functional electrophysiological data in human iPSC-CMs revealed a prominent role in cardiac ventricular repolarization for four of these channels. Finally, we also identified K 2p 17.1 as significantly reduced in niHF tissues and K 2p 4.1 as reduced in niHF compared with iHF. Thus, we advance the notion that K 2p channels are emerging as novel players in cardiac ventricular electrophysiology that could also be remodeled in cardiac pathology and therefore contribute to arrhythmias. NEW & NOTEWORTHY Two-pore K + (K 2p ) channels are traditionally regarded as merely background leak channels in myriad

Precision mechanical design of an UHV-compatible artificial channel-cut x-ray monochromator

International Nuclear Information System (INIS)

Shu, D.; Narayanan, S.; Sandy, A.; Sprung, M.; Preissner, C.; Sullivan, J.

2007-01-01

A novel ultra-high-vacuum (UHV)-compatible x-ray monochromator has been designed and commissioned at the undulator beamline 8-ID-I at the Advanced Photon Source (APS) for x-ray photon correlation spectroscopy applications. To meet the challenging stability and x-ray optical requirements, the monochromator integrates two new precision angular positioning mechanisms into its crystal optics motion control system: An overconstrained weak-link mechanism that enables the positioning of an assembly of two crystals to achieve the same performance as a single channel-cut crystal, the so called 'artificial channel-cut crystal'; A ceramic motor driven in-vacuum sine-bar mechanism for the double crystal combined pitch motion. The mechanical design of the monochromator, as well as the test results of its positioning performance are presented in this paper.

Precision mechanical design of an UHV-compatible artificial channel-cut x-ray monochromator.

Energy Technology Data Exchange (ETDEWEB)

Shu, D.; Narayanan, S.; Sandy, A.; Sprung, M.; Preissner, C.; Sullivan, J.; APS Engineering Support Division

2007-01-01

A novel ultra-high-vacuum (UHV)-compatible x-ray monochromator has been designed and commissioned at the undulator beamline 8-ID-I at the Advanced Photon Source (APS) for x-ray photon correlation spectroscopy applications. To meet the challenging stability and x-ray optical requirements, the monochromator integrates two new precision angular positioning mechanisms into its crystal optics motion control system: An overconstrained weak-link mechanism that enables the positioning of an assembly of two crystals to achieve the same performance as a single channel-cut crystal, the so called 'artificial channel-cut crystal'; A ceramic motor driven in-vacuum sine-bar mechanism for the double crystal combined pitch motion. The mechanical design of the monochromator, as well as the test results of its positioning performance are presented in this paper.

Analysis of sodium metal by X-ray fluorescence spectrometry (I). Determination of Hf, Mo, Nb, Ta, Ti, V and Zr

International Nuclear Information System (INIS)

Diaz-Guerra, J. P.

1981-01-01

A method allowing the determination of trace quantities of Hf, Mo, Nb, Ta, Ti, Vi and Zr in sodium metal previous transformation into Na 2 S0 4 is described. The enrichment of the impurities is performed through a coprecipitation technique in sulfuric medium by using Fe 3 + as a collector and cupferron or phenyfluorone as the precipitating reagent. The matrix influence and the best concentration of the collector (10/μ/ml), adequate pH (1,3 or 4, respectively) and optimum filter type (Millipore BSWP02500 or BDWP04700, respectively) have been studied, as well as the precipitation recoveries corresponding to the reagent above. It has been demonstrated the batter efficiency of the cupferron for determining all the Impurities. Detection limits range from 0.01 to 0.2 ppm., depending on the element, for samples 4 g in weight. An automatic spectrometer attached to a 16 K minicomputer and X-ray tube with a gold anode (2250-2700 W) are used. The Interferences between the lines ZrKα (2 n d order) - HfLα and TiKβ - VK α have been studied and the respective correction coefficients have been deduced. (Author) 8 refs

VLF wave generation by beating of two HF waves in the ionosphere

Science.gov (United States)

Kuo, Spencer; Snyder, Arnold; Kossey, Paul; Chang, Chia-Lie; Labenski, John

2011-05-01

Theory of a beat-wave mechanism for very low frequency (VLF) wave generation in the ionosphere is presented. The VLF current is produced by beating two high power HF waves of slightly different frequencies through the nonlinearity and inhomogeneity of the ionospheric plasma. Theory also shows that the density irregularities can enhance the beat-wave generation. An experiment was conducted by transmitting two high power HF waves of 3.2 MHz and 3.2 MHz + f, where f = 5, 8, 13, and 2.02 kHz, from the HAARP transmitter. In the experiment, the ionosphere was underdense to the O-mode heater, i.e., the heater frequency f0 > foF2, and overdense or slightly underdense to the X-mode heater, i.e., f0 < fxF2 or f0 ≥ fxF2. The radiation intensity increased with the VLF wave frequency, was much stronger with the X-mode heaters, and was not sensitive to the electrojet. The strongest VLF radiation of 13 kHz was generated when the reflection layer of the X-mode heater was just slightly below the foF2 layer and the spread of the O-mode sounding echoes had the largest enhancement, suggesting an optimal setting for beat-wave generation of VLF waves by the HF heaters.

Evaluation of the effect of prepulses on HF laser-target interactions

International Nuclear Information System (INIS)

Matzen, M.K.

1979-06-01

We have assessed the effect of multinanosecond, low-power-density prepulses on the interaction of multinanosecond, 10 14 W/cm 2 , approx. 3 -μm HF laser pulses with slab targets. The emphasis is on analyzing absorption and x-ray conversion efficiency. A survey of previous experiments gives no evidence that these prepulses will affect the total absorption. However, prepulses have been observed to cause qualitative changes in both the x-ray spectrum and conversion efficiency. Numerical simulations indicate that the laser-target interaction is effectively insensitive to low-power-density prepulses. These studies imply that basic laser-target experiments with multiplexed, HF laser pulses will provide an important characterization of the interaction of long pulse, multi-line, approx. 3 μm radiation with targets. Future wavelength comparison experiments will require prepulse suppression or target isolation

Expanded GDoF-optimality Regime of Treating Interference as Noise in the $M\\times 2$ X-Channel

KAUST Repository

Gherekhloo, Soheil

2016-11-14

Treating interference as noise (TIN) as the most appropriate approach in dealing with interference and the conditions on its optimality has attracted the interest of researchers recently. However, our knowledge on necessary and sufficient conditions of TIN is restricted to a few setups with limited number of users. In this paper, we study the optimality of TIN in terms of the generalized degrees of freedom (GDoF) for a fundamental network, namely, the M× 2 X-channel. To this end, the achievable GDoF of TIN with power allocations at the transmitters is studied. It turns out that the transmit power allocation maximizing the achievable GDOF is given by on-off signaling as long as the receivers use TIN. This leads to two variants of TIN, namely, P2P-TIN and 2-IC-TIN. While in the first variant the M× 2 X-channel is reduced to a point-to-point (P2P) channel, in the second variant, the setup is reduced to a two-user interference channel in which the receivers use TIN. The optimality of these two variants is studied separately. To this end, novel genie-aided upper bounds on the capacity of the X-channel are established. The conditions on the optimality of P2P-TIN can be summarized as follows. P2P-TIN is GDoF-optimal if there exists a dominant multiple access channel or a dominant broadcast channel embedded in the X channel. Furthermore, the necessary and sufficient conditions on the GDoF-optimality of 2-IC-TIN are presented. Interestingly, it turns out that operating the M× 2 X-channel in the 2-IC-TIN mode might be still GDOF optimal, although the conditions given by Geng et al. are violated. However, 2-IC-TIN is sub-optimal if there exists a single interferer which causes sufficiently strong interference at both receivers. The comparison of the results with the state of the art shows that the GDOF optimality of TIN is expanded significantldy.

Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

International Nuclear Information System (INIS)

Scheidecker, R.W.

1979-01-01

Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

Vessel grounding in entrance channels: case studies and physical model tests

CSIR Research Space (South Africa)

Tulsi, K

2014-05-01

Full Text Available . It was found that high speed impacts of 8 to 12 knots at 10° to the channel side slopes have the potential to damage the hull and require enormous tug forces to re-float the grounded vessel....

Blockade of P2X7 receptors or pannexin-1 channels similarly attenuates postischemic damage.

Science.gov (United States)

Cisneros-Mejorado, Abraham; Gottlieb, Miroslav; Cavaliere, Fabio; Magnus, Tim; Koch-Nolte, Friederich; Scemes, Eliana; Pérez-Samartín, Alberto; Matute, Carlos

2015-05-01

The role of P2X7 receptors and pannexin-1 channels in ischemic damage remains controversial. Here, we analyzed their contribution to postanoxic depolarization after ischemia in cultured neurons and in brain slices. We observed that pharmacological blockade of P2X7 receptors or pannexin-1 channels delayed the onset of postanoxic currents and reduced their slope, and that simultaneous inhibition did not further enhance the effects of blocking either one. These results were confirmed in acute cortical slices from P2X7 and pannexin-1 knockout mice. Oxygen-glucose deprivation in cortical organotypic cultures caused neuronal death that was reduced with P2X7 and pannexin-1 blockers as well as in organotypic cultures derived from mice lacking P2X7 and pannexin 1. Subsequently, we used transient middle cerebral artery occlusion to monitor the neuroprotective effect of those drugs in vivo. We found that P2X7 and pannexin-1 antagonists, and their ablation in knockout mice, substantially attenuated the motor symptoms and reduced the infarct volume to ~50% of that in vehicle-treated or wild-type animals. These results show that P2X7 receptors and pannexin-1 channels are major mediators of postanoxic depolarization in neurons and of brain damage after ischemia, and that they operate in the same deleterious signaling cascade leading to neuronal and tissue demise.

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

Science.gov (United States)

Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

2015-06-01

High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

Defects in TiN and HfN studied by helium thermal desorption spectrometry

International Nuclear Information System (INIS)

Hoondert, W.H.B.; Thijsse, B.J.; Beuckel, A. van den

1994-01-01

Point defects in sub-stoichiometric TiN 1-x and HfN 1-x were investigated by helium thermal desorption spectrometry (300-1800K) following He + ion implantation at energies up to 3000eV. It was found that the low energy spectra are dominated by helium dissociating from the structural vacancies on the nitrogen sublattice; the activation energy for dissociation is 2.2eV for TiN. Above a few hundred electron volts the ions begin to produce several other types of defects, from which helium dissociates with activation energies in the range 2.6-4.0eV. The identity of these defects is discussed. The results for the two nitrides were similar in many respects. The most significant difference observed is that in TiN low energy He + ions generate damage on the N sublattice of a type that is not observed for HfN. Activation energies for HfN are found to be consistently 0.7eV lower than for TiN. ((orig.))

Low-noise analog readout channel for SDD in X-ray spectrometry

Science.gov (United States)

Atkin, E.; Gusev, A.; Krivchenko, A.; Levin, V.; Malankin, E.; Normanov, D.; Rotin, A.; Sagdiev, I.; Samsonov, V.

2016-01-01

A low-noise analog readout channel optimized for operation with the Silicon Drift Detectors (SDDs) with built-in JFET is presented. The Charge Sensitive Amplifier (CSA) operates in a pulse reset mode using the reset diode built-in the SDD detector. The shaper is a 6th order semi-Gaussian filter with switchable discrete shaping times. The readout channel provides the Equivalent Noise Charge (ENC) of 12e- (simulation) and input dynamic range of 30 keV . The measured energy resolution at the 5,89 keV line of a 55Fe X-ray source is 336 eV (FWHM). The channel was prototyped via Europractice in the AMS 350 nm process as miniASIC. The simulation and first measurement results are presented in the paper.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Lithographically-fabricated channel arrays for confocal x-ray fluorescence microscopy and XAFS

International Nuclear Information System (INIS)

Woll, Arthur R; Agyeman-Budu, David; Choudhury, Sanjukta; Coulthard, Ian; Hallin, Emil; Finnefrock, Adam C; Gordon, Robert; Mass, Jennifer

2014-01-01

Confocal X-ray Fluorescence Microscopy (CXRF) employs overlapping focal regions of two x-ray optics—a condenser and collector—to directly probe a 3D volume. The minimum-achievable size of this probe volume is limited by the collector, for which polycapillaries are generally the optic of choice. Recently, we demonstrated an alternative collection optic for CXRF, consisting of an array of micron-scale collimating channels, etched in silicon, and arranged like spokes of a wheel directed towards a single source position. The optic, while successful, had a working distance of only 0.2 mm and exhibited relatively low total collection efficiency, limiting its practical application. Here, we describe a new design in which the collimating channels are formed by a staggered array of pillars whose side-walls taper away from the channel axis. This approach improves both collection efficiency and working distance, while maintaining excellent spatial resolution. We illustrate these improvements with confocal XRF data obtained at the Cornell High Energy Synchrotron Source (CHESS) and the Advanced Photon Source (APS) beamline 20-ID-B.

Preparation, structure and properties of hafnium compounds in the system Hf-C-N-O

International Nuclear Information System (INIS)

Brundiers, G.D.

1975-08-01

Highly dense, homogenous and single phase hafnium carbonitride samples (with low oxygen content) were prepared in the whole concentration range of the ternary cubic carbonitrides. Stoichiometric hafnium oxicarbides were also prepared within the range of solubility. The procedure involved the hot pressing of powders of HfC, HfN, Hf, Hf-Oxide and carbon at temperatures of 3,000 0 C and pressures up to 550 kpf/cm 2 using a novel technique. Small single crystals of slightly substoichiometric HfN were also repared. The densification of the powders was studied as a function of the non-metal concentration. Carbonitrides with N/Hf ratio of 0.37 were prepared in a high temperature autoclave operating at medium pressures by the reaction of HfC with nitrogen. All the samples were characterized by density measurements, chemical, X-ray and metallographic analysis and in some cases with the aid of quantitative metallography and microprobe analysis. Typical properties investigated were lattice parameter, thermal expansion, microhardness and electrical resistivity as function of the non-metal content. For specific concentrations extreme values in the properties are attained. With the aid of the valence electron concentration (VEC) parameter, the properties can be correlated with the density of states of electrons at the Fermi level. (orig./HK) [de

Active versus passive screening for entrance control

International Nuclear Information System (INIS)

McCormick, N.J.

1976-01-01

The benefits of different entrance control actions are quantitatively assessed by defining a relative improvement index for the screening activity. Three classes of entrance control measures are investigated: the use of a purely active screening measure (such as a portal monitor), the use of a purely passive screening measure (such as personality typing), and the combined use of active and passive measures. Active entrance control measures have been studied previously [McCormick and Erdmann, Nucl. Mat. Manag. 4, (1975)] where it was determined that the relative improvement index is approximately related to the nondetection probability factor r for the protective system by (1-r + r ln r). It is shown here that the relative improvement index for a purely passive screening system also can be approximately expressed in a convenient manner. Because the probability is very small that a sabotage or diversion action would be attempted, the result for passive screening, multiplied by r, may be combined with the factor (1-r + r ln r) to give the relative improvement index for a combined, active-and-passive entrance control system. Results from simple example calculations indicate that passive screening of nuclear plant personnel or applicants for such positions is orders-of-magnitude less effective than portal monitors or reasonable improvements in them. 5 tables

ZrCu2P2 and HfCu2P2 phosphides and their crystal structure

International Nuclear Information System (INIS)

Lomnitskaya, Ya.F.

1986-01-01

Isostructural ZrCu 2 P 2 and HfCu 2 P 2 compounds are prepared for the first time. X-ray diffraction analysis (of powder, DRON-2.0 diffractometer, FeKsub(α) radiation) was used to study crystal structure of HfCu 2 P 2 phosphide belonging to the CaAl 2 Si 2 structural type (sp. group P anti 3 m 1, R=0.095). Lattice parameters the compounds are as follows: for ZrCu 2 P 2 a=0.3810(1), c=0.6184(5); for HfCu 2 P 2 a=0.3799(1), c=0.6160(2) (nm). Atomic parameters in the HfCu 2 P 2 structure and interatomic distances are determined

A Comparative Study of Entrance in Traditional and Contemporary Houses of Iran

Directory of Open Access Journals (Sweden)

Ramin Dehbandi

2017-12-01

Full Text Available In contemporary houses in Iran, because of changes in the methods of designing and building houses, importance of entrance reduced to such level that now in contemporary houses entrance is just a door. Entrance correlates indoor safe space of house and outdoors. It`s importance lays in controlling entry, exit, territory and hierarchy. Since house owners were satisfied with traditional form of entrance, it is a good idea to learn from them in designing new entrances. The purpose of this research is to find a way for designing appropriate entrances for Iranian contemporary houses. To do this at first 40 traditional houses and 40 contemporary houses in Isfahan and Kashan were selected. These two cities are from margin of desert and the origin of traditional houses of Iran. Analysis showed that blockage of visual and phonic relation, creating a space between outdoor public space and indoor private space, creating access patterns to internal spaces and traits that separate in and out were the most significant properties of traditional entrances. All these traits are ignored in contemporary entrances. Suggestions made for design include creating public meeting space in yard and creating a separate entrance space for each house in apartments.

Structural, photoluminescence and radioluminescence properties of Eu{sup 3+} doped La{sub 2}Hf{sub 2}O{sub 7} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Wahid, Kareem; Pokhrel, Madhab; Mao, Yuanbing, E-mail: yuanbing.mao@utrgv.edu

2017-01-15

This study presents the structural, optical, and radioluminescent characterization of newly synthesized europium-doped lanthanum hafnate (La{sub 2}Hf{sub 2}O{sub 7}:xmol%Eu{sup 3+}, x=0 to 35) nanoparticles (NPs) for use as phosphors and scintillation materials. Samples prepared through a combined co-precipitation and molten salt synthetic process were found to crystalize in the pyrochlore phase, a radiation tolerant structure related to the fluorite structure. These samples exhibit red luminescence under ultraviolet and X-ray excitation. Under these excitations, the optical intensity and quantum yield of the La{sub 2}Hf{sub 2}O{sub 7}:xmol%Eu{sup 3+} NPs depend on the Eu{sup 3+} concentration and are maximized at 5%. It is proposed that there is a trade-off between the quenching due to defect states/cross-relaxation and dopant concentration. An optimal dopant concentration allows the La{sub 2}Hf{sub 2}O{sub 7}:5 mol%Eu{sup 3+} NPs to show the best luminescent properties of all the samples. - Graphical abstract: Incident X-ray and UV photons interact with La{sub 2}Hf{sub 2}O{sub 7}: xmol%Eu{sup 3+}(x=1–35) nanoparticles (NPs) to yield strong red luminescence centered at 612 nm. Colored spheres inside NP diagram represent pyrochlore coordination environment of La{sub 2}Hf{sub 2}O{sub 7}:xmol%Eu{sup 3+}. Blue, red, yellow, green and black spheres represent hafnium(IV) atoms, lanthanum(III)/europium(III) atoms, oxygen atoms at 48f site, oxygen atoms at 8b site and oxygen vacancies, respectively. - Highlights: • La{sub 2}Hf{sub 2}O{sub 7}:xmol%Eu{sup 3+} (x=0–35) nanoparticles with weakly-ordered pyrochlore structures were synthesized. • Optically and X-ray excited emission spectra showed strong luminescence centered at 612 nm. • Photoluminescence quantum yield increases with doping concentration up to 5% and decreases at higher concentrations.

Crystallization and preliminary X-ray crystallographic studies of a Lys49-phospholipase A2 homologue from Bothrops pirajai venom complexed with rosmarinic acid

International Nuclear Information System (INIS)

Santos, Juliana I. dos; Santos-Filho, Norival A.; Soares, Andreimar M.; Fontes, Marcos R. M.

2010-01-01

PrTX-I, a noncatalytic and myotoxic Lys49-phospholipase A 2 from B. pirajai venom, was cocrystallized with the inhibitor rosmarinic acid from C. verbenacea. The crystals diffracted X-rays to 1.8 Å resolution and the structure was solved, indicating a remarkable electronic density for the ligand at the entrance to the hydrophobic channel. PrTX-I, a noncatalytic and myotoxic Lys49-phospholipase A 2 from Bothrops pirajai venom, was crystallized in the presence of the inhibitor rosmarinic acid (RA). This is the active compound in the methanolic extract of Cordia verbenacea, a plant that is largely used in Brazilian folk medicine. The crystals diffracted X-rays to 1.8 Å resolution and the structure was solved by molecular-replacement techniques, showing electron density that corresponds to RA molecules at the entrance to the hydrophobic channel. The crystals belong to space group P2 1 2 1 2 1 , indicating conformational changes in the structure after ligand binding: the crystals of all apo Lys49-phospholipase A 2 structures belong to space group P3 1 21, while the crystals of complexed structures belong to space groups P2 1 or P2 1 2 1 2 1

Catalytic para-xylene maximization. Part X: Toluene disproportionation on HF promoted H-ZSM-5 catalysts

Directory of Open Access Journals (Sweden)

Ahmed K. Aboul-Gheit

2012-12-01

Full Text Available H-ZSM-5 zeolite catalysts were doped with 2%, 3% and 4%HF to be used for investigating their activities and selectivities for xylenes production and for para-xylene maximization at temperatures of 300–500 °C via toluene disproportionation. This doping caused pore size modification of the H-ZSM-5 catalyst. The reaction was carried out in a fixed bed flow type reactor. The ratio of produced para-xylene relative to its thermodynamic composition reached as high as 3.29 at 300 °C on the 4%HF doped H-ZSM-5 catalyst although this catalyst possessed the lowest amount of the largest pores (3.0–5.7 nm and the smallest pores (0.4–1.7 nm. The overall activities of the catalysts were decreased with an increase in HF doping because of diffusion restriction. The kinetics of the reaction were simply treated and found to give Ea and ΔS∗ values compatible with the characterization data of the catalysts.

Evaluation of entrance surface air kerma in pediatric chest radiography

International Nuclear Information System (INIS)

Porto, L.; Lunelli, N.; Paschuk, S.; Oliveira, A.; Ferreira, J.L.; Schelin, H.; Miguel, C.; Denyak, V.; Kmiecik, C.; Tilly, J.; Khoury, H.

2014-01-01

The objective of this study was to evaluate the entrance surface air kerma in pediatric chest radiography. An evaluation of 301 radiographical examinations in anterior–posterior (AP) and posterior–anterior (PA) (166 examinations) and lateral (LAT) (135 examinations) projections was performed. The analyses were performed on patients grouped by age; the groups included ages 0–1 y, 1–5 y, 5–10 y, and 10–15 y. The entrance surface air kerma was determined with DoseCal software (Radiological Protection Center of Saint George's Hospital, London) and thermoluminescent dosimeters. Two different exposure techniques were compared. The doses received by patients who had undergone LAT examinations were 40% higher, on average, those in AP/PA examinations because of the difference in tube voltage. A large high-dose “tail” was observed for children up to 5 y old. An increase in tube potential and corresponding decrease in current lead to a significant dose reduction. The difference between the average dose values for different age ranges was not practically observed, implying that the exposure techniques are still not optimal. Exposure doses received using the higher tube voltage and lower current-time product correspond to the international diagnostic reference levels. - Highlights: • The entrance surface air kerma of chest X-ray examinations in pediatric patients was estimated. • The data were analyzed for patients aged up to 15 y, stratified by age. • The doses of LAT examinations were 40% higher than of AP/PA because of kV used. • An increase in kV with a decrease in mAs leads to significant dose reduction

Crystallization and preliminary X-ray crystallographic studies of a Lys49-phospholipase A{sub 2} homologue from Bothrops pirajai venom complexed with rosmarinic acid

Energy Technology Data Exchange (ETDEWEB)

Santos, Juliana I. dos [Departamento de Física e Biofísica, Instituto de Biociências, UNESP - Universidade Estadual Paulista, Botucatu-SP (Brazil); Instituto Nacional de Ciência e Tecnologia em Toxinas, CNPq (Brazil); Santos-Filho, Norival A.; Soares, Andreimar M. [Instituto Nacional de Ciência e Tecnologia em Toxinas, CNPq (Brazil); Departamento de Análizes Clínicas, Toxicológicas e Bromatológicas, FCFRP, USP, Ribeirão Preto-SP (Brazil); Fontes, Marcos R. M., [Departamento de Física e Biofísica, Instituto de Biociências, UNESP - Universidade Estadual Paulista, Botucatu-SP (Brazil); Instituto Nacional de Ciência e Tecnologia em Toxinas, CNPq (Brazil)

2010-06-01

PrTX-I, a noncatalytic and myotoxic Lys49-phospholipase A{sub 2} from B. pirajai venom, was cocrystallized with the inhibitor rosmarinic acid from C. verbenacea. The crystals diffracted X-rays to 1.8 Å resolution and the structure was solved, indicating a remarkable electronic density for the ligand at the entrance to the hydrophobic channel. PrTX-I, a noncatalytic and myotoxic Lys49-phospholipase A{sub 2} from Bothrops pirajai venom, was crystallized in the presence of the inhibitor rosmarinic acid (RA). This is the active compound in the methanolic extract of Cordia verbenacea, a plant that is largely used in Brazilian folk medicine. The crystals diffracted X-rays to 1.8 Å resolution and the structure was solved by molecular-replacement techniques, showing electron density that corresponds to RA molecules at the entrance to the hydrophobic channel. The crystals belong to space group P2{sub 1}2{sub 1}2{sub 1}, indicating conformational changes in the structure after ligand binding: the crystals of all apo Lys49-phospholipase A{sub 2} structures belong to space group P3{sub 1}21, while the crystals of complexed structures belong to space groups P2{sub 1} or P2{sub 1}2{sub 1}2{sub 1}.

Evaluation of six TPS algorithms in computing entrance and exit doses

Science.gov (United States)

Metwaly, Mohamed; Glegg, Martin; Baggarley, Shaun P.; Elliott, Alex

2014-01-01

Entrance and exit doses are commonly measured in in vivo dosimetry for comparison with expected values, usually generated by the treatment planning system (TPS), to verify accuracy of treatment delivery. This report aims to evaluate the accuracy of six TPS algorithms in computing entrance and exit doses for a 6 MV beam. The algorithms tested were: pencil beam convolution (Eclipse PBC), analytical anisotropic algorithm (Eclipse AAA), AcurosXB (Eclipse AXB), FFT convolution (XiO Convolution), multigrid superposition (XiO Superposition), and Monte Carlo photon (Monaco MC). Measurements with ionization chamber (IC) and diode detector in water phantoms were used as a reference. Comparisons were done in terms of central axis point dose, 1D relative profiles, and 2D absolute gamma analysis. Entrance doses computed by all TPS algorithms agreed to within 2% of the measured values. Exit doses computed by XiO Convolution, XiO Superposition, Eclipse AXB, and Monaco MC agreed with the IC measured doses to within 2%‐3%. Meanwhile, Eclipse PBC and Eclipse AAA computed exit doses were higher than the IC measured doses by up to 5.3% and 4.8%, respectively. Both algorithms assume that full backscatter exists even at the exit level, leading to an overestimation of exit doses. Despite good agreements at the central axis for Eclipse AXB and Monaco MC, 1D relative comparisons showed profiles mismatched at depths beyond 11.5 cm. Overall, the 2D absolute gamma (3%/3 mm) pass rates were better for Monaco MC, while Eclipse AXB failed mostly at the outer 20% of the field area. The findings of this study serve as a useful baseline for the implementation of entrance and exit in vivo dosimetry in clinical departments utilizing any of these six common TPS algorithms for reference comparison. PACS numbers: 87.55.‐x, 87.55.D‐, 87.55.N‐, 87.53.Bn PMID:24892349

Preparation and characterization of Ce-doped HfO2 nanoparticles

International Nuclear Information System (INIS)

Gálvez-Barboza, S.; González, L.A.; Puente-Urbina, B.A.; Saucedo-Salazar, E.M.; García-Cerda, L.A.

2015-01-01

Highlights: • Ce-doped HfO 2 nanoparticles were prepared by a modified solgel method. • Ce-doped HfO 2 nanoparticles have a semispherical shape with sizes between 6 and 11.5 nm. • The samples doped with 10% in weight of Ce directly crystallized in a cubic structure. • A quick, straightforward and effective route for the preparation of Ce-doped nanoparticles. - Abstract: A modified solgel method to synthesize Ce-doped HfO 2 nanoparticles was carried out using a precursor material prepared with cerium nitrate, hafnium chloride, citric acid and ethylene glycol. The obtained precursor material was calcined at 500 and 700 °C for 2 h in air. The influence of the concentration of Ce and the calcination temperature was studied to observe the structural and morphological changes of the obtained materials. For the characterization, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering (RS) were employed. The XRD patterns shown that the Ce-doped HfO 2 undergoes a structural transformation from monoclinic to cubic phase, which is significantly dependent on the Ce content and calcination temperature. TEM images have also confirmed the existence of semispherical nanoparticles with sizes between 6 and 11.5 nm

Reconciliation of the excess 176Hf conundrum in meteorites: Recent disturbances of the Lu-Hf and Sm-Nd isotope systematics

Science.gov (United States)

Bast, Rebecca; Scherer, Erik E.; Sprung, Peter; Mezger, Klaus; Fischer-Gödde, Mario; Taetz, Stephan; Böhnke, Mischa; Schmid-Beurmann, Hinrich; Münker, Carsten; Kleine, Thorsten; Srinivasan, Gopalan

2017-09-01

The long-lived 176Lu-176Hf and 147Sm-143Nd radioisotope systems are commonly used chronometers, but when applied to meteorites, they can reveal disturbances. Specifically, Lu-Hf isochrons commonly yield dates up to ∼300 Myr older than the solar system and varying initial 176Hf/177Hf values. We investigated this problem by attempting to construct mineral and whole rock isochrons for eucrites and angrites. Meteorites from different parent bodies exhibit similar disturbance features suggesting that a common process is responsible. Minerals scatter away from isochron regressions for both meteorite classes, with low-Hf phases such as plagioclase and olivine typically being most displaced above (or left of) reference isochrons. Relatively Hf-rich pyroxene is less disturbed but still to the point of steepening Lu-Hf errorchrons. Using our Lu-Hf and Sm-Nd data, we tested various Hf and Lu redistribution scenarios and found that decoupling of Lu/Hf from 176Hf/177Hf must postdate the accumulation of significant radiogenic 176Hf. Therefore early irradiation or diffusion cannot explain the excess 176Hf. Instead, disturbed meteorite isochrons are more likely caused by terrestrial weathering, contamination, or common laboratory procedures. The partial dissolution of phosphate minerals may predominantly remove rare earth elements including Lu, leaving relatively immobile and radiogenic Hf behind. Robust Lu-Hf (and improved Sm-Nd) meteorite geochronology will require the development of chemical or physical methods for removing unsupported radiogenic Hf and silicate-hosted terrestrial contaminants without disturbing parent-daughter ratios.

Preparation and study of the critical-mass-free plutonium ceramics with neutron poisons Hf, Gd and Li

International Nuclear Information System (INIS)

Timoefeeva, L.F.; Orlov, V.K.; Malyukov, E.E.; Molomin, V.I.; Zhmak, V.A.; Semova, E.A.; Shishkov, N.V.; Nadykto, B.A.

2002-01-01

Powder sintering was used to produce homogeneous type oxide ceramics of Pu with Hf, Gd and Li 6 . In all the ceramics, there is the number of neutron poison (Hf, Gd and Li) atoms per plutonium atom needed, according to the physical calculation, for them to be free of critical mass. PuO 2 stabilizers high-temperature modifications of cubic HfO 2 or hexagonal Gd 2 O 3 , however, at the ratio given by the physical calculation, the plutonium is insufficient for their full stabilization. Addition of yttrium oxide as an additive stabilizing the fcc phase of HfO 2 resulted in cubic solid solution (Pu, Hf, Y)O 2-x . Pu/Li/Hf and Pu/Li/Si ceramics produced by sintering of PuO 2 and compound Li 2 HfO 3 or 6 Li 4 SiO 4 powders is characterized with presence of two phases. The method of differential thermal analysis demonstrated the phase stability of (Pu-Hf, Pu-Gd, Pu-Li-Hf) oxide ceramics in the 20-1500degC temperature range. Ceramic (Pu/Li/Si) has several endothermal effects. Tests in boiling water solutions of various composition suggest that the specimens of Pu, Hf oxides and ternary oxides (Pu, Hf, Y)O 2 are less stable in weakly acidic media than in weakly alkaline medium and distilled water. The obtained results were used as a basis to estimate the assumed solid solution region boundaries for binary Hf, Pu and ternary Hf, Pu, Y oxides on the side of HfO 2 . (author)

Hardness and microstructural characterization of API 5L X70 steel pipes welded by HF/ERW process; Caracterizacao microestrutural e de dureza em tubos de aco API 5L X70 soldados pelo processo HF/ERW

Energy Technology Data Exchange (ETDEWEB)

Calcada, Mauricio Vieira; Voorwald, Herman Jacobus Cornelis; Nascimento, Marcelino Pereira do [UNESP, Guaratingueta, SP (Brazil). Faculdade de Engenharia

2010-07-01

The materials that stand in the manufacture of steel pipes are called API, that should have, high mechanical resistance, high corrosion resistance, high fatigue resistance, good weldability, and other properties. Thus, the purpose of this project was to evaluate the microstructure and hardness of welded joints by the HF/ERW process of API 5L X70 steel pipes. The microstructural analysis was performed using a surface finish with grit sizes from 220 to 25 {mu}m e polishing with diamond paste from 9 {mu}m to 0.05 {mu}m; the revelation was made with 3% Nital attack. The Vickers hardness was performed across the welded joint by 33 points to indentation. The results were: 80.5 {+-} 3.4% of ferrite and 19.5 {+-} 3.4% of perlite for microanalysis. As for hardness, the values were: 215.69 HV10 for weld line, 218.65 HV10 for ZTA and 218.95 HV10 for base metal. (author)

New Ablation-Resistant Material Candidate for Hypersonic Applications: Synthesis, Composition, and Oxidation Resistance of HfIr3-Based Solid Solution.

Science.gov (United States)

Lozanov, Victor V; Baklanova, Natalya I; Bulina, Natalia V; Titov, Anatoly T

2018-04-18

The peculiarities of the solid-state interaction in the HfC-Ir system have been studied within the 1000-1600 °C temperature range using a set of modern analytical techniques. It was stated that the interaction of HfC with iridium becomes noticeable at temperatures as low as 1000-1100 °C and results in the formation of HfIr 3 -based substitutional solid solution. The homogeneity range of the HfIr 3± x phase was evaluated and refined as HfIr 2.43 -HfIr 3.36 . The durability of the HfIr 3 -based system under extreme environmental conditions was studied. It was shown that the HfIr 3 -based material displays excellent ablation resistance under extreme environmental conditions. The benefits of the new designed material result from its relative oxygen impermeability and special microstructure similar to superalloys. The results obtained in this work allow us to consider HfIr 3 as a very promising candidate for extreme applications.

Long-term stability of beam quality and output of conventional X-ray units.

Science.gov (United States)

Fukuda, Atsushi; Matsubara, Kosuke; Miyati, Tosiaki

2015-01-01

Conventional diagnostic X-ray units are used for radiographic imaging in many countries. For obtaining entrance surface doses, a numerical dose determination method has been applied in Japan. Although this technique is effective, it has to account for errors, particularly fluctuations, due to the beam quality and output of X-ray tubes. As a part of our quality control procedures, we recorded the entrance surface air kerma, tube voltage, and half-value layer measurements made for four diagnostic X-ray tubes over a 103-week period. The entrance surface air kerma for one of the four X-ray tubes had increased significantly by 11.4 % over 1 year from its initial setting, whereas the tube voltages and half-value layers did not deviate significantly from their initial values. Medical physicists and radiological technologists should be aware of this fluctuation for diagnostic X-ray tubes and take it into consideration when calculating the entrance surface air kerma.

Network based multi-channel digital flash X-ray imaging system

International Nuclear Information System (INIS)

Wang Jingjin; Yuan Jie; Liu Yaqiang; Lin Yong; Song Zheng; Liu Keyin; Zhang Qi; Zheng Futang

2000-01-01

A network based multi-channel digital flash X-ray imaging system has been developed. It can be used to acquire and digitize orthogonal flash X-ray images in multi-interval, and to distribute the images on the network. There is no need of films and chemical process, no anxiety of waiting and no trouble of film archiving. This system is useful for testing ballistics, jet, explode, armour-piercing and fast running machines. The system composing and acquired images are presented. The software for object separating, mass calculating, 3D positioning, speed determining and cavity reconstruction are described

Network based multi-channel digital flash X-ray imaging system

International Nuclear Information System (INIS)

Wang Jingjin; Yuan Jie; Liu Yaqiang; Lin Yong; Song Zheng; Liu Keyin

2003-01-01

A network based multi-channel digital flash X-ray imaging system has been developed. It can be used to acquire and digitize orthogonal flash X-ray images in multi-interval, and to distribute the images on the network. There is no need of films and chemical process, no anxiety of waiting and no trouble of film archiving. This system is useful for testing ballistics, jet, explode, armour-piercing and fast running machines. The system composing and acquired images of terminal ballistics are presented. The software for object separating, profile calculating and 3D cavity reconstruction are described

Bolsa Bay, California, Proposed Ocean Entrance System Study. Report 2. Comprehensive Shoreline Response Computer Simulation, Bolsa Bay, California

Science.gov (United States)

1990-04-01

Southern California Bight is affected by a land-sea breeze pattern. A variation in flow is caused by the heating of the land surface during the day, and...1980). 27. The success of the inlet channel at Agua Hedionda indicates that a stable non-navigable entrance at Bolsa Chica could be feasible provided a...dual jetty system similar to Agua Hedionda is incorporated into the design. However, structures that penetrate into the active surf zone are expected

Low-Complexity Full-Diversity Detection in Two-User MIMO X Channels

KAUST Repository

Ismail, Amr

2014-01-26

Several interference cancellation (IC) schemes have been recently proposed to suppress multi-user interference for various network configurations (e.g., multiple access and X channels). However, most of these schemes trade-off diversity for implementation complexity or vice-versa. In this paper, we propose a full-diversity interference cancellation scheme in a multiple-input multiple-output (MIMO) X channel with two sources and two destinations while maintaining low decoding complexity. We provide sufficient conditions for a wide range of space-time block codes (STBCs) to achieve full-diversity gain under the so-called partial interference cancellation group decoding (PICGD) in the configuration of interest. A systematic construction is then proposed to achieve full-diversity. The constructed scheme is compared to recently proposed IC scheme in terms of performance and decoding complexity. Our IC scheme outperforms the recently proposed scheme in the case it provides higher transmission rate, while it loses slightly in the case of equal rates. In terms of decoding complexity, both schemes are equivalent.

Low-Complexity Full-Diversity Detection in Two-User MIMO X Channels

KAUST Repository

Ismail, Amr; Abediseid, Walid; Alouini, Mohamed-Slim

2014-01-01

Several interference cancellation (IC) schemes have been recently proposed to suppress multi-user interference for various network configurations (e.g., multiple access and X channels). However, most of these schemes trade-off diversity for implementation complexity or vice-versa. In this paper, we propose a full-diversity interference cancellation scheme in a multiple-input multiple-output (MIMO) X channel with two sources and two destinations while maintaining low decoding complexity. We provide sufficient conditions for a wide range of space-time block codes (STBCs) to achieve full-diversity gain under the so-called partial interference cancellation group decoding (PICGD) in the configuration of interest. A systematic construction is then proposed to achieve full-diversity. The constructed scheme is compared to recently proposed IC scheme in terms of performance and decoding complexity. Our IC scheme outperforms the recently proposed scheme in the case it provides higher transmission rate, while it loses slightly in the case of equal rates. In terms of decoding complexity, both schemes are equivalent.

Clinical trials update from the Heart Failure Society of America Meeting 2009: FAST, IMPROVE-HF, COACH galectin-3 substudy, HF-ACTION nuclear substudy, DAD-HF, and MARVEL-1.

Science.gov (United States)

Lainscak, Mitja; Coletta, Alison P; Sherwi, Nasser; Cleland, John G F

2010-02-01

This article presents findings and a commentary on late-breaking trials presented during the meeting of the Heart Failure Society of America in September 2009. Unpublished reports should be considered as preliminary, since analyses may change in the final publication. The FAST trial showed somewhat better performance of intrathoracic impedance for prediction of deterioration in patients with heart failure (HF) when compared with daily weighing. The IMPROVE-HF study reported the benefits of education on the management of patients with systolic HF. Galectin-3 appeared a useful method for improving risk stratification of patients with chronic HF in a substudy of the COACH trial. A nuclear substudy of the HF-ACTION trial failed to demonstrate that resting myocardial perfusion imaging, a measure of myocardial scar and viability, was clinically useful. A small randomized controlled trial (DAD-HF) suggested that the use of low-dose dopamine in patients with acutely decompensated HF was associated with less deterioration in renal function and less hypokalaemia. The MARVEL-1 trial raises further concerns about the safety of myoblast transplantation in ischaemic HF.

Assessment of Patients’ Entrance Skin Dose from Diagnostic X-ray Examinations at Public Hospitals of Akwa Ibom State, Nigeria

Directory of Open Access Journals (Sweden)

Esen Nsikan U

2015-07-01

Full Text Available Introduction High doses of ionizing radiation can lead to adverse health outcomes such as cancer induction in humans. Although the consequences are less evident at very low radiation doses, the associated risks are of societal importance. This study aimed at assessing entrance skin doses (ESDs in patients undergoing selected diagnostic X-ray examinations at public hospitals of Akwa Ibom State, Nigeria. Materials and Methods In total, six examinations were performed on 720 patients in this study.   CALDose_X5 software program was used in estimating ESDs based on patients’ information and technical exposure parameters. Results The estimated ESDs ranged from 0.59 to 0.61 mGy for PA and RLAT projections of the thorax, respectively. ESDs for the AP and RLAT projections of the cranium were 1.65 and 1.48 mGy, respectively. Also, ESD values for the AP view of the abdomen and pelvis were 1.89 and 1.88 mGy, respectively. The mean effective dose was within the range of 0.021-0.075 mGy for the thorax (mean= 0.037, 0.008-0.045 mGy for the cranium (mean= 0.016, 0.215-0.225 mGy for the abdomen (mean= 0.219 and 0.101-0.119 mGy for the pelvis (mean= 0.112. Conclusion The obtained results were comparable to the international reference dose levels, except for the PA projection of the thorax. Therefore, quality assurance programs are required in diagnostic X-ray units of Nigeria hospitals. The obtained findings add to the available data and can help authorities establish reference dose levels for diagnostic radiography in Nigeria.

Traffic disruption at Entrance B -TRAM- related work

CERN Multimedia

Infrastructure and General Services Department

2010-01-01

Due to work being carried out for the TRAM we inform you that vehicles coming from Geneva will be prohibited from turning left into Entrance B. This restriction will be in place for approx. 10 weeks*) starting from Monday 30 August 2010. You are highly recommended to enter CERN through Entrance A during this period even though a diversion will be put in place to allow access to CERN from Entrance B (as shown in the attached sketch). In addition, approx. 20 car parking spaces will be temporarily unavailable at the western end of the flags car park. We thank you in advance for your kind understanding. ______________ *) The exact end date of the work will be communicated in due course. GS-SEM Group

Ab initio theoretical study of dipole-bound anions of molecular complexes: (HF)3- and (HF)4- anions

Science.gov (United States)

Ramaekers, Riet; Smith, Dayle M. A.; Smets, Johan; Adamowicz, Ludwik

1997-12-01

Ab initio calculations have been performed to determine structures and vertical electron detachment energy (VDE) of the hydrogen fluoride trimer and tetramer anions, (HF)3- and (HF)4-. In these systems the excess electron is bound by the dipole field of the complex. It was determined that, unlike the neutral complexes which prefer the cyclic structures, the equilibrium geometries of the anions have "zig-zag" shapes. For both complexes the predicted VDEs are positive [210 meV and 363 meV for (HF)3- and (HF)4-, respectively], indicating that the anions are stable systems with respect to the vertical electron detachment. These results were obtained at the coupled-cluster level of theory with single, double and triple excitations [CCSD(T) method; the triple-excitation contribution in this method is calculated approximately using the perturbation approach] with the anion geometries obtained using the second-order Møller-Plesset perturbation theory (MP2) method. The same approach was also used to determine the adiabatic electron affinities (AEA) of (HF)3 and (HF)4. In addition to the electronic contribution, we also calculated the contributions (using the harmonic approximation) resulting from different zero-point vibration energies of the neutral and anionic clusters. The calculations predicted that while the AEA of (HF)3 is positive (44 meV), the AEA for (HF)4 is marginally negative (-16 meV). This suggests that the (HF)3- anion should be a stable system, while the (HF)4- is probably metastable.

Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2012-09-01

Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

Science.gov (United States)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

Effect of a dual inlet channel on cell loading in microfluidics.

Science.gov (United States)

Yun, Hoyoung; Kim, Kisoo; Lee, Won Gu

2014-11-01

Unwanted sedimentation and attachment of a number of cells onto the bottom channel often occur on relatively large-scale inlets of conventional microfluidic channels as a result of gravity and fluid shear. Phenomena such as sedimentation have become recognized problems that can be overcome by performing microfluidic experiments properly, such as by calculating a meaningful output efficiency with respect to real input. Here, we present a dual-inlet design method for reducing cell loss at the inlet of channels by adding a new " upstream inlet " to a single main inlet design. The simple addition of an upstream inlet can create a vertically layered sheath flow prior to the main inlet for cell loading. The bottom layer flow plays a critical role in preventing the cells from attaching to the bottom of the channel entrance, resulting in a low possibility of cell sedimentation at the main channel entrance. To provide proof-of-concept validation, we applied our design to a microfabricated flow cytometer system (μFCS) and compared the cell counting efficiency of the proposed μFCS with that of the previous single-inlet μFCS and conventional FCS. We used human white blood cells and fluorescent microspheres to quantitatively evaluate the rate of cell sedimentation in the main inlet and to measure fluorescence sensitivity at the detection zone of the flow cytometer microchip. Generating a sheath flow as the bottom layer was meaningfully used to reduce the depth of field as well as the relative deviation of targets in the z-direction (compared to the x-y flow plane), leading to an increased counting sensitivity of fluorescent detection signals. Counting results using fluorescent microspheres showed both a 40% reduction in the rate of sedimentation and a 2-fold higher sensitivity in comparison with the single-inlet μFCS. The results of CD4(+) T-cell counting also showed that the proposed design results in a 25% decrease in the rate of cell sedimentation and a 28% increase in

Absolute El Transition Probabilities in the Deformed Nuclei 177Yb and Hf179

International Nuclear Information System (INIS)

Malmskog, Sven G.

1964-08-01

The absolute E1-transition probabilities have been measured for two 7/2 - (514) levels populated from the short-lived isomers 177m Yb (6.4 sec) and 179m Hf (18.6 sec), a delayed coincidence set up being used for the purpose. This gave a half life of T 1/2 = (4.48 ± 0.08)x10 -9 sec for the 104 keV level in 177 Yb and T 1/2 = (1.86 ± 0.05)x10 -9 sec for the 217 keV level in 179 Hf. The result has been compared with the calculations made by Nilsson. The effect of the pairing correlation has also been taken into account. An agreement with the experimental values to within a factor of three is obtained. An extrapolated estimate of the half life for the 408.9 keV 7/2 - (514) level in 181 W gives 3x10 -11 sec

Na+-H+ exchanger and proton channel in heart failure associated with Becker and Duchenne muscular dystrophies.

Science.gov (United States)

Bkaily, Ghassan; Jacques, Danielle

2017-10-01

Cardiomyopathy is found in patients with Duchenne (DMD) and Becker (BMD) muscular dystrophies, which are linked muscle diseases caused by mutations in the dystrophin gene. Dystrophin defects are not limited to DMD but are also present in mild BMD. The hereditary cardiomyopathic hamster of the UM-X7.1 strain is a particular experimental model of heart failure (HF) leading to early death in muscular dystrophy (dystrophin deficiency and sarcoglycan mutation) and heart disease (δ-sarcoglycan deficiency and dystrophin mutation) in human DMD. Using this model, our previous work showed a defect in intracellular sodium homeostasis before the appearance of any apparent biochemical and histological defects. This was attributed to the continual presence of the fetal slow sodium channel, which was also found to be active in human DMD. Due to muscular intracellular acidosis, the intracellular sodium overload in DMD and BMD was also due to sodium influx through the sodium-hydrogen exchanger NHE-1. Lifetime treatment with an NHE-1 inhibitor prevented intracellular Na + overload and early death due to HF. Our previous work also showed that another proton transporter, the voltage-gated proton channel (Hv1), exists in many cell types including heart cells and skeletal muscle fibers. The Hv1 could be indirectly implicated in the beneficial effect of blocking NHE-1.

MO-HF-C alloy composition

International Nuclear Information System (INIS)

Whelan, E.P.; Kalns, E.

1987-01-01

This patent describes, as an article of manufacture, a cast ingot of a molybdenum-hafnium-carbon alloy consisting essentially by weight of about 0.6% to about 1% Hf, about 0.045% to about 0.08% C, and the balance essentially molybdenum. The amount of Hf and C present are substantially stoichiometric with respect to HfC and within about +-15% of stoichiometry. The ingot is characterized in that it has a substantially less tendency to crack compared to alloys containing Hf in excess of about 1% by weight and carbon in excess of 0.08% by weight, without substantial diminution in strength properties of the alloy

A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers

International Nuclear Information System (INIS)

Ingerle, D.; Meirer, F.; Zoeger, N.; Pepponi, G.; Giubertoni, D.; Steinhauser, G.; Wobrauschek, P.; Streli, C.

2010-01-01

Grazing Incidence X-ray Fluorescence Analysis (GIXRF) is a powerful technique for depth-profiling and characterization of thin layers in depths up to a few hundred nanometers. By measurement of fluorescence signals at various incidence angles Grazing Incidence X-ray Fluorescence Analysis provides information on depth distribution and total dose of the elements in the layers. The technique is very sensitive even in depths of a few nanometers. As Grazing Incidence X-ray Fluorescence Analysis does not provide unambigous depth profile information and needs a realistic input depth profile for fitting, in the context of the EC funded European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA) Grazing Incidence X-ray Fluorescence Analysis is used as a complementary technique to Secondary Ion Mass Spectrometry (SIMS) for the characterization of Ultra Shallow Junctions (USJ). A measuring chamber was designed, constructed and tested to meet the requirements of Grazing Incidence X-ray Fluorescence Analysis. A measurement protocol was developed and tested. Some results for As implants as well as Hf based high k layers on Silicon are shown. For the determination of the bulk As content of the wafers, Instrumental Neutron Activation Analysis has also been applied for comparison.

CFD analyses of coolant channel flowfields

Science.gov (United States)

Yagley, Jennifer A.; Feng, Jinzhang; Merkle, Charles L.

1993-01-01

The flowfield characteristics in rocket engine coolant channels are analyzed by means of a numerical model. The channels are characterized by large length to diameter ratios, high Reynolds numbers, and asymmetrical heating. At representative flow conditions, the channel length is approximately twice the hydraulic entrance length so that fully developed conditions would be reached for a constant property fluid. For the supercritical hydrogen that is used as the coolant, the strong property variations create significant secondary flows in the cross-plane which have a major influence on the flow and the resulting heat transfer. Comparison of constant and variable property solutions show substantial differences. In addition, the property variations prevent fully developed flow. The density variation accelerates the fluid in the channels increasing the pressure drop without an accompanying increase in heat flux. Analyses of the inlet configuration suggest that side entry from a manifold can affect the development of the velocity profile because of vortices generated as the flow enters the channel. Current work is focused on studying the effects of channel bifurcation on the flow field and the heat transfer characteristics.

Novel protective role of endogenous cardiac myocyte P2X4 receptors in heart failure.

Science.gov (United States)

Yang, Tiehong; Shen, Jian-bing; Yang, Ronghua; Redden, John; Dodge-Kafka, Kimberly; Grady, James; Jacobson, Kenneth A; Liang, Bruce T

2014-05-01

Heart failure (HF), despite continuing progress, remains a leading cause of mortality and morbidity. P2X4 receptors (P2X4R) have emerged as potentially important molecules in regulating cardiac function and as potential targets for HF therapy. Transgenic P2X4R overexpression can protect against HF, but this does not explain the role of native cardiac P2X4R. Our goal is to define the physiological role of endogenous cardiac myocyte P2X4R under basal conditions and during HF induced by myocardial infarction or pressure overload. Mice established with conditional cardiac-specific P2X4R knockout were subjected to left anterior descending coronary artery ligation-induced postinfarct or transverse aorta constriction-induced pressure overload HF. Knockout cardiac myocytes did not show P2X4R by immunoblotting or by any response to the P2X4R-specific allosteric enhancer ivermectin. Knockout hearts showed normal basal cardiac function but depressed contractile performance in postinfarct and pressure overload models of HF by in vivo echocardiography and ex vivo isolated working heart parameters. P2X4R coimmunoprecipitated and colocalized with nitric oxide synthase 3 (eNOS) in wild-type cardiac myocytes. Mice with cardiac-specific P2X4R overexpression had increased S-nitrosylation, cyclic GMP, NO formation, and were protected from postinfarct and pressure overload HF. Inhibitor of eNOS, L-N(5)-(1-iminoethyl)ornithine hydrochloride, blocked the salutary effect of cardiac P2X4R overexpression in postinfarct and pressure overload HF as did eNOS knockout. This study establishes a new protective role for endogenous cardiac myocyte P2X4R in HF and is the first to demonstrate a physical interaction between the myocyte receptor and eNOS, a mediator of HF protection. © 2014 American Heart Association, Inc.

Simultaneous analysis of rotational and vibrational-rotational spectra of DF and HF to obtain irreducible molecular constants for HF

International Nuclear Information System (INIS)

Horiai, Koui; Uehara, Hiromichi

2011-01-01

Graphical abstract: Available rotational and vibrational-rotational spectral lines of DF and HF are analyzed simultaneously using a non-Born-Oppenheimer effective Hamiltonian. Research highlights: → Simultaneous analysis of DF and HF spectral data. → Application of a non-Born-Oppenheimer effective Hamiltonian. → Twenty irreducible molecular constants for HF have been determined. - Abstract: Analytic expressions of corrections for the breakdown of the Born-Oppenheimer approximation to Dunham's Y ij with optimal parameters, i.e., determinable clusters of expansion coefficients, are applied to a data analysis of the rotational and vibrational-rotational transitions of HF reported in the literature. All the available spectral lines of the two isotopologues, DF and HF, are simultaneously fitted to a single set of molecular parameters of HF within experimental errors. Fitting of a data set of 595 spectral transitions for DF and HF has generated only 20 minimal independent parameter values, i.e., 'irreducible' molecular constants of HF, that are sufficient to precisely generate 82 Y ij coefficients and 144 band constants in total: 41 Y ij and 72 band constants each for DF and HF.

Study of the mechanical and magnetic properties of Fe{sub 61}Co{sub 10}Zr{sub 5-x}Hf{sub x}W{sub 2}Y{sub 2}B{sub 20} (x = 0 or 3) bulk amorphous and crystalline alloys

Energy Technology Data Exchange (ETDEWEB)

Nabialek, Marcin G. [Institute of Physics, Czestochowa University of Technology, 19 Armii Krajowej Av., 42-200 Czestochowa (Poland); Szota, Michal [Institute of Materials Engineering, Czestochowa University of Technology, 19 Armii Krajowej Av., 42-200 Czestochowa (Poland); Dospial, Marcin J.

2010-05-15

The microstructure, thermal stability, mechanical and magnetic properties of Fe{sub 61}Co{sub 10}Zr{sub 5-x}Hf{sub x}W{sub 2}Y{sub 2}B{sub 20} (where x = 0 or 3) bulk metallic glasses (BMG) and their crystalline equivalents were investigated. The crystalline materials were smelted on a copper mould using an electric arc; their amorphous equivalents were prepared using the induction suction casting method (ISC). All samples investigated were in the form of plates with dimensions of 10x10x0.5mm. From X-ray diffraction and Moessbauer spectroscopy, it was found that both investigated alloys prepared using this method have an amorphous structure. From magnetic measurements obtained by a vibrating sample magnetometer (VSM), it was shown that all measured samples displayed soft magnetic properties with relatively high saturation of the magnetization. The thermal stability and glass-forming ability (GFA) for investigated alloys were derived from differential scanning calorimetry (DSC) curves. The measurements of mechanical properties for amorphous alloys were found to be better than those for crystalline alloys with the same atomic composition. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study on the adducts formation of Zr and Hf chelates

International Nuclear Information System (INIS)

Ree, Chin Taik; Jung, Young Sam; Park, Jun Kown

1986-01-01

The synergistic effect observed in Zr(IV) and Hf(IV) extraction from strong perchloric acid solutions by the mixtures of 2-Thenoyltri-fluoroacetone(TTA) and Octanols is shown to be caused by the formation of a mixed complex, M(TTA) 3 XS (M=Zr(IV), HF(IV), X=ClO 4 - , S=Octanol). One of the four TTA molecules coordinated at lower HClO 4 concentration to the metal as bidendate ligand seems to be changed to monodendate due to increasing HClO 4 concentration. The monodenate TTA ligand leaves the coordination site, finally, due to the activity of perchlorate at higher concentration and the additional coordination of an Octanol molecule seems to be allowed to the vaccant site which shows the synergistic extraction phenomena. (Author)

A Robust Threshold for Iterative Channel Estimation in OFDM Systems

Directory of Open Access Journals (Sweden)

A. Kalaycioglu

2010-04-01

Full Text Available A novel threshold computation method for pilot symbol assisted iterative channel estimation in OFDM systems is considered. As the bits are transmitted in packets, the proposed technique is based on calculating a particular threshold for each data packet in order to select the reliable decoder output symbols to improve the channel estimation performance. Iteratively, additional pilot symbols are established according to the threshold and the channel is re-estimated with the new pilots inserted to the known channel estimation pilot set. The proposed threshold calculation method for selecting additional pilots performs better than non-iterative channel estimation, no threshold and fixed threshold techniques in poor HF channel simulations.

Expanded GDoF-optimality Regime of Treating Interference as Noise in the $M\\times 2$ X-Channel

KAUST Repository

Gherekhloo, Soheil; Chaaban, Anas; Sezgin, Aydin

2016-01-01

-TIN and 2-IC-TIN. While in the first variant the M× 2 X-channel is reduced to a point-to-point (P2P) channel, in the second variant, the setup is reduced to a two-user interference channel in which the receivers use TIN. The optimality of these two variants

Entrance surface dose and image quality: Comparison of adult chest and abdominal X-ray examinations in general practitioner clinics, public and private hospitals in Malaysia

International Nuclear Information System (INIS)

Hambali, A. S.; Ng, K. H.; Abdullah, B. J. J.; Wang, H. B.; Jamal, N.; Spelic, D. C.; Suleiman, O. H.

2009-01-01

This study was undertaken to compare the entrance surface dose (ESD) and image quality of adult chest and abdominal X-ray examinations conducted at general practitioner (GP) clinics, and public and private hospitals in Malaysia. The surveyed facilities were randomly selected within a given category (28 GP clinics, 20 public hospitals and 15 private hospitals). Only departmental X-ray units were involved in the survey. Chest examinations were done at all facilities, while only hospitals performed abdominal examinations. This study used the x-ray attenuation phantoms and protocols developed for the Nationwide Evaluation of X-ray Trends (NEXT) survey program in the United States. The ESD was calculated from measurements of exposure and clinical geometry. An image quality test tool was used to evaluate the low-contrast detectability and high-contrast detail performance under typical clinical conditions. The median ESD value for the adult chest X-ray examination was the highest (0.25 mGy) at GP clinics, followed by private hospitals (0.22 mGy) and public hospitals (0.17 mGy). The median ESD for the adult abdominal X-ray examination at public hospitals (3.35 mGy) was higher than that for private hospitals (2.81 mGy). Results of image quality assessment for the chest X-ray examination show that all facility types have a similar median spatial resolution and low-contrast detectability. For the abdominal X-ray examination, public hospitals have a similar median spatial resolution but larger low-contrast detectability compared with private hospitals. The results of this survey clearly show that there is room for further improvement in performing chest and abdominal X-ray examinations in Malaysia. (authors)

Relativistically Self-Channeled Femtosecond Terawatt Lasers for High-Field Physics and X-Ray Generation

Energy Technology Data Exchange (ETDEWEB)

Borisov, A.B.; Boyer, K.; Cameron, S.M.; Luk, T.S.; McPherson, A.; Nelson, T.; Rhodes, C.K.

1999-01-01

Optical channeling or refractive guiding processes involving the nonlinear interaction of intense femtosecond optical pulses with matter in the self-focussing regime has created exciting opportunities for next-generation laser plasma-based x-ray sources and directed energy applications. This fundamentally new form of extended paraxial electromagnetic propagation in nonlinear dispersive media such as underdense plasma is attributed to the interplay between normal optical diffraction and intensity-dependent nonlinear focussing and refraction contributions in the dielectric response. Superposition of these mechanisms on the intrinsic index profile acts to confine the propagating energy in a dynamic self-guiding longitudinal waveguide structure which is stable for power transmission and robust compression. The laser-driven channels are hypothesized to support a degree of solitonic transport behavior, simultaneously stable in the space and time domains (group velocity dispersion balances self-phase modulation), and are believed to be self-compensating for diffraction and dispersion over many Rayleigh lengths in contrast with the defining characteristics of conventional diffractive imaging and beamforming. By combining concentrated power deposition with well-ordered spatial localization, this phenomena will also create new possibilities for production and regulation of physical interactions, including electron beams, enhanced material coupling, and self-modulated plasma wakefields, over extended gain distances with unprecedented energy densities. Harmonious combination of short-pulse x-ray production with plasma channeling resulting from a relativistic charge displacement nonlinearity mechanism in the terawatt regime (10{sup 18} W/cm{sup 2}) has been shown to generate high-field conditions conducive to efficient multi-kilovolt x-ray amplification and peak spectral brightness. Channeled optical propagation with intense short-pulse lasers is expected to impact several

Fragile X mental retardation protein controls synaptic vesicle exocytosis by modulating N-type calcium channel density

Science.gov (United States)

Ferron, Laurent; Nieto-Rostro, Manuela; Cassidy, John S.; Dolphin, Annette C.

2014-04-01

Fragile X syndrome (FXS), the most common heritable form of mental retardation, is characterized by synaptic dysfunction. Synaptic transmission depends critically on presynaptic calcium entry via voltage-gated calcium (CaV) channels. Here we show that the functional expression of neuronal N-type CaV channels (CaV2.2) is regulated by fragile X mental retardation protein (FMRP). We find that FMRP knockdown in dorsal root ganglion neurons increases CaV channel density in somata and in presynaptic terminals. We then show that FMRP controls CaV2.2 surface expression by targeting the channels to the proteasome for degradation. The interaction between FMRP and CaV2.2 occurs between the carboxy-terminal domain of FMRP and domains of CaV2.2 known to interact with the neurotransmitter release machinery. Finally, we show that FMRP controls synaptic exocytosis via CaV2.2 channels. Our data indicate that FMRP is a potent regulator of presynaptic activity, and its loss is likely to contribute to synaptic dysfunction in FXS.

R and D toward a compact high-brilliance X-ray source based on channeling radiation

Energy Technology Data Exchange (ETDEWEB)

Piot, P.; Brau, C. A.; Gabella, W. E.; Choi, B. K.; Jarvis, J. D.; Lewellen, J. W.; Mendenhall, M. H.; Mihalcea, D. [Northern Illinois Center for Accelerator and Detector Development and Department of Physics, Northern Illinois University, DeKalb, IL 60115 (United States) and Accelerator Physics Center, Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 (United States); Dept. of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 (United States) and Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, TN 37235 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 (United States); Physics Department and Combat Systems, Naval Postgraduate School, Monterey, CA 93943 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 (United States); Northern Illinois Center for Accelerator and Detector Development and Department of Physics, Northern Illinois University, DeKalb, IL 60115 (United States)

2012-12-21

X-rays have been valuable to a large number of fields including Science, Medicine, and Security. Yet, the availability of a compact high-spectral brilliance X-ray sources is limited. A technique to produce X-rays with spectral brilliance B{approx} 10{sup 12} photons.(mm-mrd){sup -2}. (0.1% BW){sup -1}.s{sup -1} is discussed. The method is based on the generation and acceleration of a low-emittance field-emitted electron bunches. The bunches are then focused on a diamond crystal thereby producing channeling radiation. In this paper, after presenting the overarching concept, we discuss the generation, acceleration and transport of the low-emittance bunches with parameters consistent with the production of high-brilliance X-rays through channeling radiation. We especially consider the example of the Advanced Superconducting Test Accelerator (ASTA) currently in construction at Fermilab where a proof-of-principle experiment is in preparation.

R and D Toward a Compact High-Brilliance X-Ray Source Based on Channeling Radiation

International Nuclear Information System (INIS)

Piot, P.; Brau, C.A.; Gabella, W.E.; Choi, B.K.; Jarvis, J.D.; Mendenhall, M.H.; Lewellen, J.W.; Mihalcea, D.

2012-01-01

X-rays have been valuable to a large number of fields including Science, Medicine, and Security. Yet, the availability of a compact high-spectral brilliance X-ray sources is limited. A technique to produce X-rays with spectral brilliance B ∼ 10 12 photons.(mm-mrd) -2 .(0.1% BW) -1 .s -1 is discussed. The method is based on the generation and acceleration of a low-emittance field-emitted electron bunches. The bunches are then focused on a diamond crystal thereby producing channeling radiation. In this paper, after presenting the overarching concept, we discuss the generation, acceleration and transport of the low-emittance bunches with parameters consistent with the production of high-brilliance X-rays through channeling radiation. We especially consider the example of the Advanced Superconducting Test Accelerator (ASTA) currently in construction at Fermilab where a proof-of-principle experiment is in preparation.

Growth and characterization of acentric BaHf(BO{sub 3}){sub 2} and BaZr(BO{sub 3}){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Mączka, Mirosław, E-mail: m.maczka@int.pan.wroc.pl [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław 2 (Poland); Szymborska-Małek, Katarzyna; Gągor, Anna [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wrocław 2 (Poland); Majchrowski, Andrzej [Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland)

2015-05-15

Growth, single crystal X-ray diffraction, polarized Raman and infrared (IR) studies of BaHf(BO{sub 3}){sub 2} are presented. Raman and IR spectra of polycrystalline BaZr(BO{sub 3}){sub 2} are also reported to facilitate assignment of modes. BaHf(BO{sub 3}){sub 2} borate crystallizes in trigonal system, space group R3c, with lattice parameters: a=5.1540(4) Å, c=33.901(3) Å. It accommodates dolomite-like structure doubled in the c direction, which is built of alternating layers of HfO{sub 6} octahedra and BaO{sub 6} distorted trigonal prisms that are connected through borate groups. The obtained structural as well as spectroscopic data show that BaHf(BO{sub 3}){sub 2} is isostructural with BaZr(BO{sub 3}){sub 2} and the deviations from centrosymmetry is small. - Graphical abstract: Arrangement of BO{sub 3} groups in BaHf(BO{sub 3}){sub 2} along the c direction in one unit cell. Dark and light blue denote different borate groups. - Highlights: • BaHf(BO{sub 3}){sub 2} single crystals were grown. • X-ray diffraction showed that this borate crystallizes in the acentric R3c structure. • Raman and IR spectra were measured for BaHf(BO{sub 3}){sub 2} and BaZr(BO{sub 3}){sub 2}, respectively. • Assignment of modes is proposed.

Preparation and characterization of Ce-doped HfO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Gálvez-Barboza, S. [Centro de Investigación en Química Aplicada, Departamento de Materiales Avanzados, Blvd. Enrique Reyna Hermosillo #140, C.P. 25294 Saltillo, Coahuila (Mexico); Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Industria Metalúrgica # 1062 Parque Industrial, C.P. 25900 Ramos Arizpe, Coahuila (Mexico); González, L.A. [Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Industria Metalúrgica # 1062 Parque Industrial, C.P. 25900 Ramos Arizpe, Coahuila (Mexico); Puente-Urbina, B.A.; Saucedo-Salazar, E.M. [Centro de Investigación en Química Aplicada, Departamento de Materiales Avanzados, Blvd. Enrique Reyna Hermosillo #140, C.P. 25294 Saltillo, Coahuila (Mexico); García-Cerda, L.A., E-mail: luis.garcia@ciqa.edu.mx [Centro de Investigación en Química Aplicada, Departamento de Materiales Avanzados, Blvd. Enrique Reyna Hermosillo #140, C.P. 25294 Saltillo, Coahuila (Mexico)

2015-09-15

Highlights: • Ce-doped HfO{sub 2} nanoparticles were prepared by a modified solgel method. • Ce-doped HfO{sub 2} nanoparticles have a semispherical shape with sizes between 6 and 11.5 nm. • The samples doped with 10% in weight of Ce directly crystallized in a cubic structure. • A quick, straightforward and effective route for the preparation of Ce-doped nanoparticles. - Abstract: A modified solgel method to synthesize Ce-doped HfO{sub 2} nanoparticles was carried out using a precursor material prepared with cerium nitrate, hafnium chloride, citric acid and ethylene glycol. The obtained precursor material was calcined at 500 and 700 °C for 2 h in air. The influence of the concentration of Ce and the calcination temperature was studied to observe the structural and morphological changes of the obtained materials. For the characterization, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering (RS) were employed. The XRD patterns shown that the Ce-doped HfO{sub 2} undergoes a structural transformation from monoclinic to cubic phase, which is significantly dependent on the Ce content and calcination temperature. TEM images have also confirmed the existence of semispherical nanoparticles with sizes between 6 and 11.5 nm.

Progressive activation of paratrigeminal nucleus during entrance to hibernation

International Nuclear Information System (INIS)

Kilduff, T.S.; Sharp, F.R.; Heller, H.C.

1988-01-01

The paratrigeminal nucleus (Pa5) undergoes a progressive increase in its uptake of 2-[ 14 C]deoxyglucose (2DG) relative to other brain structures during entrance to hibernation in the ground squirrel. This highly significant increase results in the Pa5 becoming the most highly labeled brain region during hibernation, even though it exhibits one of the lowest levels of 2DG uptake in the brain during the nonhibernating state. The progressive activation of the Pa5 observed during entrance is reversed during arousal from hibernation. These observations and the neuroanatomical projections of the Pa5 implicate this nucleus as playing a role in the entrance and maintenance of the hibernating state

Development of HF-systems for electron storage systems

International Nuclear Information System (INIS)

Androsov, V.P.; Karnaukhov, I.M.; Popkov, Yu.P.; Reva, S.N.; Telegin, Yu.N.

1999-01-01

Development of HF systems for electron storages is described. Its final task is construction of 100 kW HF station at 699,3 MHz frequency consisting from low-power HF system, klystron amplifier, wave line for HF power transmission and accelerating section. Functional parameters of HF station are given

Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

International Nuclear Information System (INIS)

Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

2012-01-01

Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

Coulomb-nuclear interference measurements of 168Yb, 176Hf, 178Hf, and 180Hf and lifetime measurements in 186Hg

International Nuclear Information System (INIS)

Nettles, W.G.

1979-01-01

Alpha scattering measurements were performed at center-of-mass energies near the Coulomb barrier. These energies allow for nuclear as well as pure Coulomb forces to play a significant role in the excitation process. The interference of these two forces is very sensitive to the sign of the E4 ground-state moment, whereas pure Coulomb excitation is not. Systematics of the E4 moments of the rare earth mass region indicate a transition in the magnitude and sign of the reduced matrix element of the M(E4) operator between 0 + and 4 + states from small and positive to large and negative between Yb and W. Previous Coulomb-nuclear interference measurements show that this reduced matrix element for 180 Hf is large and negative. The present results agree with that conclusion. It is also shown that the above reduced matrix element for 178 Hf, like that of 180 Hf, is large and negative. The small and positive moment (matrix element) for 168 Yb is seen to be consistent with the experimental data. No conclusions are drawn for the E4 moment in 176 Hf. The measurement of nuclear lifetimes shorter than 500 ps requires the use of plastic scintilltor detectors. These detectors, however have very poor energy resolution. A system is described that uses plastic scintillators with a magnetic lens spectrometer for energy selection. The system was used to measure the lifetime of the 522-keV 0 + sate in 186 Hf. A data analysis method using higher-order distribution moments is also presented

Temporary closure of Entrance A

CERN Document Server

2007-01-01

Entrance A to the CERN site will be temporarily closed to incoming traffic between 1.30 p.m. and 6.00 p.m. on Tuesday 30 January in order to allow the information signs to be changed. Thank you for your understanding. TS/CSE Group

Highly stable thin film transistors using multilayer channel structure

KAUST Repository

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

HF Radio Angle-of-Arrival Measurements and Ionosonde Positioning

Directory of Open Access Journals (Sweden)

Lung-Chih Tsai

2014-01-01

Full Text Available Since 2010 a 2nd generation NOAA MF/HF radar, also referred to as the VIPIR ionosonde, has been operated at Hualien, Taiwan (23.8973°N, 121.5503°E. The Hualien VIPIR ionosonde is a modern ionospheric radar, fully digitizing complex signal records and using multiple parallel receiver channels for simultaneous signal measurements from multiple spaced receiving antennas. This paper considers radio direction finding based on interferometric phase measurements from a horizontal antenna array in the Hualien VIPIR ionosonde system. We applied the Hermite normal form method to solve the phase-measurement aliasing and least squares problems and improve the radio angle-of-arrival (AOA measurements. Backward ray-tracing simulation has been proposed to determine radio transmitter position. This paper presents a numerical, step by step ray-tracing method based on the IGRF superimposed onto a phenomenological ionospheric electron density model, the TaiWan Ionospheric Model (TWIM. The proposed methodology is successfully applied to locate two experimental HF radio transmitters at Longquan and Chungli with distance errors within 5 km and less than 5% of the great circle distances.

Development of EPICS channel access embedded ActiveX components for GUI development

International Nuclear Information System (INIS)

Roy, A.; Bhole, R.B.; Pal, S.

2012-01-01

The paper describes the integration of Experimental Physics and Industrial Control System (EPICS) Channel Access (CA) protocol and Microsoft ActiveX technology towards developing a generalize operator interface (OPI) building facility for Windows platform. EPICS is used as the development architecture of the control system in Superconducting Cyclotron (SCC). Considering the operators' familiarity and compatibility with third party software, it was decided to use MS-Windows platform at operator interface level in SCC during commission. Microsoft Visual Basic (VB) is used on trial basis as OPI building platform to incorporate user specific features e.g. file system access for data storage and analysis, user authentication at OPI level etc. A set of EPICS Channel Access embedded ActiveX components is developed to ease the programming complexity and reduce developmental time of the OPI for Windows platform. OPIs, developed using these components and containing hundreds of process parameters, are being used reliably over a considerable period of time. (author)

50 CFR 25.53 - Establishment of single visit entrance fees.

Science.gov (United States)

2010-10-01

... fees. 25.53 Section 25.53 Wildlife and Fisheries UNITED STATES FISH AND WILDLIFE SERVICE, DEPARTMENT OF THE INTERIOR (CONTINUED) THE NATIONAL WILDLIFE REFUGE SYSTEM ADMINISTRATIVE PROVISIONS Fees and Charges § 25.53 Establishment of single visit entrance fees. Entrance fees established for single visit...

Ion channeling

International Nuclear Information System (INIS)

Erramli, H.; Blondiaux, G.

1994-01-01

Channeling phenomenon was predicted, many years ago, by stark. The first channeling experiments were performed in 1963 by Davies and his coworkers. Parallely Robinson and Oen have investigated this process by simulating trajectories of ions in monocrystals. This technique has been combined with many methods like Rutherford Backscattering Spectrometry (R.B.S.), Particles Induced X-rays Emission (P.I.X.E) and online Nuclear Reaction (N.R.A.) to localize trace elements in the crystal or to determine crystalline quality. To use channeling for material characterization we need data about the stopping power of the incident particle in the channeled direction. The ratios of channeled to random stopping powers of silicon for irradiation in the direction have been investigated and compared to the available theoretical results. We describe few applications of ion channeling in the field of materials characterization. Special attention is given to ion channeling combined with Charged Particle Activation Analysis (C.P.A.A.) for studying the behaviour of oxygen atoms in Czochralski silicon lattices under the influence of internal gettering and in different gaseous atmospheres. Association between ion channeling and C.P.A.A was also utilised for studying the influence of the growing conditions on concentration and position of carbon atoms at trace levels in the MOVPE Ga sub (1-x) Al sub x lattice. 6 figs., 1 tab., 32 refs. (author)

Electric Response and Conductivity Mechanism in H3PO4‑Doped Polybenzimidazole-4N−HfO2 Nanocomposite Membranes for High Temperature Fuel Cells

International Nuclear Information System (INIS)

Nawn, Graeme; Vezzù, Keti; Bertasi, Federico; Pagot, Gioele; Pace, Giuseppe; Conti, Fosca; Negro, Enrico

2017-01-01

Relaxation and polarization phenomena of phosphoric acid-doped [PBI4N(HfO 2 ) x ](H 3 PO 4 ) y nanocomposite membranes for high-temperature proton-exchange membrane fuel cells are studied using Dynamic Mechanical Analysis (DMA) and Broadband Electrical Spectroscopy (BES). The membranes are obtained by casting combinations of a polybenzimidazole polymer (PBI4N) with increasing amounts of hafnium oxide nanofiller, resulting in [PBI4N(HfO 2 ) x ] hybrid systems with 0 ≤ x ≤ 0.32. Phosphoric acid at varying content levels (0 ÷ 18 wt%) is used as a doping agent, giving rise to [PBI4N(HfO 2 ) x ](H 3 PO 4 ) y membranes. DMA and BES studies lead us to determine that the electric response of the membranes is modulated by polarization phenomena and by α and β dielectric relaxation events of the polymer matrix. Additionally, the experimental results suggest that in [PBI4N(HfO 2 ) x ](H 3 PO 4 ) y membranes the conductivity occurs owing to three conductivity pathways: two mechanisms involving inter-domain proton migration phenomena by “hopping” events; and one mechanism in which proton exchange occurs between delocalization bodies. These results highlight the significant effect of the hafnium oxide nanofiller content on the conductivity of [PBI4N(HfO 2 ) x ](H 3 PO 4 ) y where, at x ≥ 0.04, demonstrates conductivity higher (9.0 × 10 −2 S/cm) than that of pristine H 3 PO 4 -doped PBI4N (4.8 × 10 −2 S/cm) at T ≥ 155 °C.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

Science.gov (United States)

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Effects of Magnetic Particles Entrance Arrangements on Mixing Efficiency of a Magnetic Bead Micromixer

Institute of Scientific and Technical Information of China (English)

Reza Kamali; Seyed Alireza Shekoohi; Alireza Binesh

2014-01-01

In this study, a computer code is developed to numerically investigate a magnetic bead micromixer under different conditions. The micromixer consists of a microchannel and numerous micro magnetic particles which enter the micromixer by fluid flows and are actuated by an alternating magnetic field normal to the main flow. An important feature of micromixer which is not considered before by researchers is the particle entrance arrangement into the micromixer. This parameter could effectively affect the micromixer efficiency. There are two general micro magnetic particle entrance arrangements in magnetic bead micromixers: determined position entrance and random position entrance. In the case of determined position entrances, micro magnetic particles enter the micromixer at specific positions of entrance cross section. However, in a random position entrance,particles enter the microchannel with no order. In this study mixing efficiencies of identical magnetic bead micromixers which only differ in particle entrance arrangement are numerically investigated and compared.The results reported in this paper illustrate that the prepared computer code can be one of the most powerful and beneficial tools for the magnetic bead micromixer performance analysis. In addition, the results show that some features of the magnetic bead micromixer are strongly affected by the entrance arrangement of the particles.

Entrance doses during lateral lumbar spine and antero-posterior abdomen examinations: generator waveform dependence

International Nuclear Information System (INIS)

Morrison, G.D.; Underwood, A.C.

1995-01-01

In North Trent, UK, an entrance dose survey of lateral lumbar spine and antero-posterior (AP) abdomen examinations has been carried out in 17 radiology departments. The survey comprised 294 lateral lumbar spine and 322 AP abdomen entrance dose measurements. The mean entrance doses were found to be approximately half of the relevant national reference entrance dose levels of 30 mGy and 10 mGy, respectively. The effect of generator waveform on entrance dose was studied by separating the generators into two types: ''pulsating potential'' (PP) generators and ''constant potential'' (CP) generators for each examination. PP generators comprised 23% of the total number of examinations. The mean entrance dose and radiographic exposure factors from CP generators were found to be significantly lower than those from PP generators. The use of CP type generators, together with low attenuation components can significantly reduce patient entrance doses for these examinations. (author)

Probing the Geometry of the Inner Vestibule of BK Channels with Sugars

Science.gov (United States)

Brelidze, Tinatin I.; Magleby, Karl L.

2005-01-01

The geometry of the inner vestibule of BK channels was probed by examining the effects of different sugars in the intracellular solution on single-channel current amplitude (unitary current). Glycerol, glucose, and sucrose decreased unitary current through BK channels in a concentration- and size-dependent manner, in the order sucrose > glucose > glycerol, with outward currents being reduced more than inward currents. The fractional decrease of outward current was more directly related to the fractional hydrodynamic volume occupied by the sugars than to changes in osmolality. For concentrations of sugars ≤1 M, the i/V plots for outward currents in the presence and absence of sugar superimposed after scaling, and increasing K+ i from 150 mM to 2 M increased the magnitudes of the i/V plots with little effect on the shape of the scaled curves. These observations suggest that sugars ≤1 M reduce outward currents mainly by entering the inner vestibule and reducing the movement of K+ through the vestibule, rather than by limiting diffusion-controlled access of K+ to the vestibule. With 2 M sucrose, the movement of K+ into the inner vestibule became diffusion limited for 150 mM K+ i and voltages >+100 mV. Increasing K+ i then relieved the diffusion limitation. An estimate of the capture radius based on the 5 pA diffusion-limited current for channels without the ring of negative charge at the entrance to the inner vestibule was 2.2 Å. Adding the radius of a hydrated K+ (6–8 Å) then gave an effective radius for the entrance to the inner vestibule of 8–10 Å. Such a functionally wide entrance to the inner vestibule together with our observation that even small concentrations of sugar in the inner vestibule reduce unitary current suggest that a wide inner vestibule is required for the large conductance of BK channels. PMID:16043773

Thermal performance of mini-channel liquid cooled cylinder based battery thermal management for cylindrical lithium-ion power battery

International Nuclear Information System (INIS)

Zhao, Jiateng; Rao, Zhonghao; Li, Yimin

2015-01-01

Highlights: • A new kind of cooling method for cylindrical batteries based on mini-channel liquid cooled cylinder (LCC) is proposed. • The capacity of reducing the T max is limited through increasing the mass flow rate. • The capability of heat dissipation is enhanced first and then weaken along with the rising of entrance size. - Abstract: Battery thermal management is a very active research focus in recent years because of its great essentiality for electric vehicles. In order to maintain the maximum temperature and local temperature difference in appropriate range, a new kind of cooling method for cylindrical batteries which is based on mini-channel liquid cooled cylinder is proposed in this paper. The effects of channel quantity, mass flow rate, flow direction and entrance size on the heat dissipation performance were investigated numerically. The results showed that the maximum temperature can be controlled under 40 °C for 42,110 cylindrical batteries when the number of mini-channel is no less than four and the inlet mass flow rate is 1 × 10 −3 kg/s. Considering both the maximum temperature and local temperature difference, the cooling style by liquid cooled cylinder can demonstrate advantages compared to natural convection cooling only when the channel number is larger than eight. The capability of reducing the maximum temperature is limited through increasing the mass flow rate. The capacity of heat dissipation is enhanced first and then weakened along with the rising of entrance size, when the inlet mass flow rate is constant

Crystal structure of the binder phase in a model HfC-TiC-Ni material

International Nuclear Information System (INIS)

Heiligers, Christiane; Neethling, Johannes H.

2008-01-01

The crystal structure of the binder phase in a model HfC-TiC-Ni sample produced by hot pressing is investigated. The nature of the binder depends on the amount of Hf and Ti that remains in solution with Ni after cooling. Four different crystal structures are identified by analysis of electron diffraction patterns obtained using transmission electron microscopy techniques and the composition of the phases determined by energy dispersive X-ray spectrometry. Three of the phases are cubic; Ni, Ni 3 (Ti,Hf) and Ni 23 (Ti,Hf) 6 with lattice parameters of 3.52 ± 0.05, 3.52 ± 0.03 and 10.70 ± 0.40 A, respectively. The hexagonal phase is an intermetallic Ni 3 Ti phase, with lattice parameters of a = b = 5.00 ± 0.20 A and c = 8.16 ± 0.20 A. The crystal structures are confirmed by simulations of the electron diffraction patterns using JEMS software

High Q-factor tunable superconducting HF circuit

CERN Document Server

Vopilkin, E A; Pavlov, S A; Ponomarev, L I; Ganitsev, A Y; Zhukov, A S; Vladimirov, V V; Letyago, A G; Parshikov, V V

2001-01-01

Feasibility of constructing a high Q-factor (Q approx 10 sup 5) mechanically tunable in a wide range of frequencies (12-63 MHz) vibration circuit of HF range was considered. The tunable circuit integrates two single circuits made using YBaCuO films. The circuit frequency is tuned by changing distance X (capacity) between substrates. Potentiality of using substrates of lanthanum aluminate, neodymium gallate and strontium titanate for manufacture of single circuits was considered. Q-factor of the circuit amounted to 68000 at resonance frequency of 6.88 MHz

High Q-factor tunable superconducting HF circuit

International Nuclear Information System (INIS)

Vopilkin, E.A.; Parafin, A.E.; Pavlov, S.A.; Ponomarev, L.I.; Ganitsev, A.Yu.; Zhukov, A.S.; Vladimirov, V.V.; Letyago, A.G.; Parshikov, V.V.

2001-01-01

Feasibility of constructing a high Q-factor (Q ∼ 10 5 ) mechanically tunable in a wide range of frequencies (12-63 MHz) vibration circuit of HF range was considered. The tunable circuit integrates two single circuits made using YBaCuO films. The circuit frequency is tuned by changing distance X (capacity) between substrates. Potentiality of using substrates of lanthanum aluminate, neodymium gallate and strontium titanate for manufacture of single circuits was considered. Q-factor of the circuit amounted to 68000 at resonance frequency of 6.88 MHz [ru

China’s Entrance to the WTO and Financial Reform

Directory of Open Access Journals (Sweden)

Ki-Soon Park

2000-09-01

Full Text Available The openness and liberalization of China’s financial market is expected to accelerate with her entrance to the WTO. China plans to carry out liberalization measures, including the expansion of the Renminbi business scope. Openness and liberalization will expedite the integration of internal and external sectors, thereby making the domestic financial market more vulnerable to environmental changes. Consequently, China should establish a strong financial system to efficiently cope with the contagion effects of an external financial crisis. However, China’s financial system is still very weak, mainly due to the enormous bad loans to SOEs (state-owned enterprises. Accordingly, the Chinese government should carry out financial reform measures such as strengthening the financial supervision system, dealing with bad bank loans and restructuring the financial institutions. On the whole, China’s entrance to the WTO is expected to have a positive influence on her financial sector by accelerating such reform policies as financial reform and SOE reform. Entrance to the WTO will make society recognize the necessity of reform and openness. The Chinese government can decide to push some difficult reform policies which would not have been considered without WTO entrance.

PAC study in the HfO2-SiO2 system

International Nuclear Information System (INIS)

Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

2010-01-01

A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

Ionosphere research with a HF/MF cubesat radio instrument

Science.gov (United States)

Kallio, Esa; Aikio, Anita; Alho, Markku; Fontell, Mathias; Harri, Ari-Matti; Kauristie, Kirsti; Kestilä, Antti; Koskimaa, Petri; Mäkelä, Jakke; Mäkelä, Miika; Turunen, Esa; Vanhamäki, Heikki; Verronen, Pekka

2017-04-01

New technology provides new possibilities to study geospace and 3D ionosphere by using spacecraft and computer simulations. A type of nanosatellites, CubeSats, provide a cost effective possibility to provide in-situ measurements in the ionosphere. Moreover, combined CubeSat observations with ground-based observations gives a new view on auroras and associated electromagnetic phenomena. Especially joint and active CubeSat - ground based observation campaigns enable the possibility of studying the 3D structure of the ionosphere. Furthermore using several CubeSats to form satellite constellations enables much higher temporal resolution. At the same time, increasing computation capacity has made it possible to perform simulations where properties of the ionosphere, such as propagation of the electromagnetic waves in the medium frequency, MF (0.3-3 MHz) and high frequency, HF (3-30 MHz), ranges is based on a 3D ionospheric model and on first-principles modelling. Electromagnetic waves at those frequencies are strongly affected by ionospheric electrons and, consequently, those frequencies can be used for studying the plasma. On the other hand, even if the ionosphere originally enables long-range telecommunication at MF and HF frequencies, the frequent occurrence of spatiotemporal variations in the ionosphere disturbs communication channels, especially at high latitudes. Therefore, study of the MF and HF waves in the ionosphere has both a strong science and technology interests. We introduce recently developed simulation models as well as measuring principles and techniques to investigate the arctic ionosphere by a polar orbiting CubeSat whose novel AM radio instrument measures HF and MF waves. The cubesat, which contains also a white light aurora camera, is planned to be launched in late 2017 (http://www.suomi100satelliitti.fi/eng). The new models are (1) a 3D ray tracing model and (2) a 3D full kinetic electromagnetic simulation. We also introduce how combining of the

Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

Energy Technology Data Exchange (ETDEWEB)

Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

2017-04-01

Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

Application of personal computer to development of entrance management system for radiating facilities

International Nuclear Information System (INIS)

Suzuki, Shogo; Hirai, Shouji

1989-01-01

The report describes a system for managing the entrance and exit of personnel to radiating facilities. A personal computer is applied to its development. Major features of the system is outlined first. The computer is connected to the gate and two magnetic card readers provided at the gate. The gate, which is installed at the entrance to a room under control, opens only for those who have a valid card. The entrance-exit management program developed is described next. The following three files are used: ID master file (random file of the magnetic card number, name, qualification, etc., of each card carrier), entrance-exit management file (random file of time of entrance/exit, etc., updated everyday), and entrance-exit record file (sequential file of card number, name, date, etc.), which are stored on floppy disks. A display is provided to show various lists including a list of workers currently in the room and a list of workers who left the room at earlier times of the day. This system is useful for entrance management of a relatively small facility. Though small in required cost, it requires only a few operators to perform effective personnel management. (N.K.)

Highly stable thin film transistors using multilayer channel structure

KAUST Repository

Nayak, Pradipta K.

2015-03-09

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

Classical theory of the Kumakhov radiation in axial channeling

International Nuclear Information System (INIS)

Khokonov, M.K.; Komarov, F.F.; Telegin, V.I.

1984-01-01

The paper considers radiation of ultrarelativistic electrons in axial channeling initially predicted by Kumakhov. The consideration is based on the results of solution of the Fokker-Planck equation. The spectral-angular characteristics of the Kumakhov radiation in thick single crystals are calculated. It is shown that in heavy single crystals the energy losses on radiation can amount to a considerable portion of the initial beam energy. The possibility of a sharp increase of radiation due to a decrease of crystal temperature is discussed. It is shown that radiation intensity in axial channeling is weakly dependent on the initial angle of the electron entrance into the channel if this angle changes within the limits of a critical one. (author)

Phase formation in the K2MoO4-Lu2(MoO4)3-Hf(MoO4)2 system and the structural study of triple molybdate K5LuHf(MoO4)6

International Nuclear Information System (INIS)

Romanova, E.Yu.; Bazarov, B.G.; Tushinova, Yu.L.; Fedorov, K.N.; Bazarova, Zh.G.; Klevtsova, R.F.; Glinskaya, L.A.

2007-01-01

Interactions in the ternary system K 2 MoO 4 -Lu 2 (MoO 4 ) 3 -Hf(MoO 4 ) 2 have been studied by X-ray powder diffraction and differential thermal analysis. A new triple (potassium lutetium hafnium) molybdate with the 5 : 1 : 2 stoichiometry has been found. Monocrystals of this molybdate have been grown. Its X-ray diffraction structure has been refined (an X8 APEX automated diffractometer, MoK α radiation, 1960 F(hkl), R = 0.0166). The trigonal unit cell has the following parameters: a = 10.6536(1) A, c = 37.8434(8) A, V=3719.75(9) A, Z = 6, space group R3-bar c. The mixed 3D framework of the structure is built of Mo tetrahedra sharing corners with two independent (Lu,Hf)O 6 octahedra. Two sorts of potassium atoms occupy large framework voids [ru

Thermal evolution of CaO-doped HfO{sub 2} films and powders

Energy Technology Data Exchange (ETDEWEB)

Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

2009-05-01

Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

Hf på VUC

DEFF Research Database (Denmark)

Pless, Mette; Hansen, Niels-Henrik Møller

. Konkret har forskningsprojektet 3 mål: At afdække hf-kursisternes tidligere uddannelsesforløb og -erfaringer, før de starter på hf på VUC.At afdække, hvordan mødet med uddannelsens studiemiljø opleves af kursisterne, og ikke mindst kursisternes oplevelse af undervisningsformer, lærere mm.At afdække, hvad...

30 CFR 18.29 - Access openings and covers, including unused lead-entrance holes.

Science.gov (United States)

2010-07-01

... lead-entrance holes. 18.29 Section 18.29 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... unused lead-entrance holes. (a) Access openings in explosion-proof enclosures will be permitted only... Figure 1 in Appendix II.) (c) Holes in enclosures that are provided for lead entrances but which are not...

Doppler shift simulation of scattered HF signals during the Tromsø HF pumping experiment on 16 February 1996

Directory of Open Access Journals (Sweden)

T. D. Borisova

2002-09-01

Full Text Available Comparisons between bistatic scatter measurements and simulation results during the Tromsø HF pumping experiment on 16 February 1996 are made. Doppler measurements of an HF diagnostic signal scattered from the field-aligned irregularities (FAIs in the auroral E-region were carried out on the London – Tromsø – St. Petersburg path at 9410 kHz from 21:00 to 22:00 UT. The scattered signals were observed both from natural and artificial ionospheric irregularities located in the vicinity of Tromsø. To simulate the Doppler frequency shifts, fd , of scattered signals, a radio channel model, named CONE, was developed. The model allows for ray tracing, group and phase paths, and Doppler frequency shift calculations. The calculated Doppler shifts were analyzed for dependence on the magnitude and direction of plasma velocities in the scattering volume. It was found that the velocity components in the north-south direction are crucial for explaining the Doppler frequency shifts of the scattered diagnostic signals. To simulate fd , real velocities obtained from the EISCAT UHF radar at an altitude of 278 km and from the digital all-sky imager during the experiment were employed. The simulation results of Doppler frequency shift variations with time are in reasonable agreement with the experimental Doppler shifts of scattered signals on the London – Tromsø – St. Petersburg path.Key words. Ionosphere (active experiments; ionospheric irregularities Radio science (ionospheric propagation

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

Science.gov (United States)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2017-10-01

We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE

XPS: A multi-channel preamplifier-shaper IC for X-ray spectroscopy

International Nuclear Information System (INIS)

Krieger, B.; Kipnis, I.; Ludewigt, B.A.

1997-11-01

An integrated circuit featuring 48 channels of charge-sensitive preamplifiers followed by variable-gain pulse shaping amplifiers is being developed as part of an x-ray spectrometer with a highly segmented detector to handle high fluxes in synchrotron experiments. Such detector systems can provide excellent energy resolution combined with one-dimensional spatial information. The IC combines many basic spectroscopy amplifier functions with a low-noise preamplifier section to produce a unique circuit capable of driving conventional ADC modules directly. An important feature of the design is the novel CR-RC 2 pulse shaper. In this section, high-linearity transconductor circuits are required in order to provide a broad range of continuously variable peaking times while still maintaining the linearity and noise performance necessary for x-ray spectroscopy. Reported here are first measurements made on the performance of a 16-channel prototype integrated circuit. At present, the preamplifier-shaper circuit achieves an equivalent input noise of 26 electrons rms at 2 micros peaking time with a 0.2 pF external capacitor, which is similar to the capacitance of a single detector element. The design was fabricated in standard 1.2 microm CMOS technology

Isoelectronic substitutions and aluminium alloying in the Ta-Nb-Hf-Zr-Ti high-entropy alloy superconductor

Science.gov (United States)

von Rohr, Fabian O.; Cava, Robert J.

2018-03-01

High-entropy alloys (HEAs) are a new class of materials constructed from multiple principal elements statistically arranged on simple crystallographic lattices. Due to the large amount of disorder present, they are excellent model systems for investigating the properties of materials intermediate between crystalline and amorphous states. Here we report the effects of systematic isoelectronic replacements, using Mo-Y, Mo-Sc, and Cr-Sc mixtures, for the valence electron count 4 and 5 elements in the body-centered cubic (BCC) Ta-Nb-Zr-Hf-Ti high-entropy alloy (HEA) superconductor. We find that the superconducting transition temperature Tc strongly depends on the elemental makeup of the alloy, and not exclusively its electron count. The replacement of niobium or tantalum by an isoelectronic mixture lowers the transition temperature by more than 60%, while the isoelectronic replacement of hafnium, zirconium, or titanium has a limited impact on Tc. We further explore the alloying of aluminium into the nearly optimal electron count [TaNb] 0.67(ZrHfTi) 0.33 HEA superconductor. The electron count dependence of the superconducting Tc for (HEA)Al x is found to be more crystallinelike than for the [TaNb] 1 -x(ZrHfTi) x HEA solid solution. For an aluminum content of x =0.4 the high-entropy stabilization of the simple BCC lattice breaks down. This material crystallizes in the tetragonal β -uranium structure type and superconductivity is not observed above 1.8 K.

Features of Crystallization of Rapidly Quenched Ni45Ti32Hf18Cu5 and Ni25Ti32Hf18Cu25 Alloys from Melt with High-Temperature Shape Memory Effect

Science.gov (United States)

Pushin, A. V.; Pushin, V. G.; Kuntsevich, T. E.; Kuranova, N. N.; Makarov, V. V.; Uksusnikov, A. N.; Kourov, N. I.

2017-12-01

A comparative study of the structure and the chemical and phase composition of Ni45Ti32Hf18Cu5 and Ni25Ti32Hf18Cu25 amorphous alloys obtained by fast-quenching of melt stream by spinning has been carried out by transmission and scanning electron microscopy and X-ray diffraction. The critical temperatures of their devitrification were determined by the data of temperatures measurements of electrical resistance. The features of the formation of ultrafine structure and the phase transformation at the vitrification depending on the regimes of heat treatment and chemical composition of alloy have been established.

Enhancement of dental x-ray images by two channel image processing

International Nuclear Information System (INIS)

Mitra, S.; Yu, T.H.

1991-01-01

In this paper, the authors develop a new algorithm for the enhancement of low-contrast details of dental X-ray images using a two channel structure. The algorithm first decomposes an input image in the frequency domain into two parts by filtering: one containing the low frequency components and the other containing the high frequency components. Then these parts are enhanced separately using a transform magnitude modifier. Finally a contrast enhanced image is formed by combining these two processed pats. The performance of the proposed algorithm is illustrated through enhancement of dental X-ray images. The algorithm can be easily implemented on a personal computer

HF Propagation sensitivity study and system performance analysis with the Air Force Coverage Analysis Program (AFCAP)

Science.gov (United States)

Caton, R. G.; Colman, J. J.; Parris, R. T.; Nickish, L.; Bullock, G.

2017-12-01

The Air Force Research Laboratory, in collaboration with NorthWest Research Associates, is developing advanced software capabilities for high fidelity simulations of high frequency (HF) sky wave propagation and performance analysis of HF systems. Based on the HiCIRF (High-frequency Channel Impulse Response Function) platform [Nickisch et. al, doi:10.1029/2011RS004928], the new Air Force Coverage Analysis Program (AFCAP) provides the modular capabilities necessary for a comprehensive sensitivity study of the large number of variables which define simulations of HF propagation modes. In this paper, we report on an initial exercise of AFCAP to analyze the sensitivities of the tool to various environmental and geophysical parameters. Through examination of the channel scattering function and amplitude-range-Doppler output on two-way propagation paths with injected target signals, we will compare simulated returns over a range of geophysical conditions as well as varying definitions for environmental noise, meteor clutter, and sea state models for Bragg backscatter. We also investigate the impacts of including clutter effects due to field-aligned backscatter from small scale ionization structures at varied levels of severity as defined by the climatologically WideBand Model (WBMOD). In the absence of additional user provided information, AFCAP relies on International Reference Ionosphere (IRI) model to define the ionospheric state for use in 2D ray tracing algorithms. Because the AFCAP architecture includes the option for insertion of a user defined gridded ionospheric representation, we compare output from the tool using the IRI and ionospheric definitions from assimilative models such as GPSII (GPS Ionospheric Inversion).

Channel Extension in Deep-Water Distributive Systems

Science.gov (United States)

Hoyal, D. C.; Sheets, B. A.

2007-12-01

The cyclic nature of channel and lobe formation in submarine fans is the result of the unstable and ephemeral nature of newly formed distributary channels. Avulsion cycles are initiated as unconfined sheet flow immediately following avulsion followed by stages of channel incision and extension, deposition of channel mouth deposits, and often channel backfilling. In contrast with those in alluvial and deltaic environments, avulsion cycles in submarine fans are relatively poorly understood due to the difficulty of observing deep ocean processes, either over short timescales needed to measure the hydrodynamics of active turbidity currents, or over longer timescales needed for the morphodynamic evolution of individual distributary channels and avulsion events. Here we report the results of over 80 experiments in a 5m x 3m x1m deep tank using saline (NaCl) density flows carrying low-density plastic sediment (SG 1.5) flowing down an inclined ramp. These experiments were designed to investigate trends observed in earlier self-organized experimental submarine fans with well-developed avulsion cycles, in which distributive lobes were observed to form on relatively high slopes. In particular, we were interested in investigating the relationship between channel extension length (distance from the inlet to the point where the flow becomes de-channelized, transitioning into a mouth-bar/lobe) and slope. The results of the experiments are clear but counter-intuitive. Channels appear to extend in discrete segments and channel extension length is inversely related to slope over a wide range of slopes (5-17 degrees). In addition, channel extension seems largely independent of inlet flow density (salt concentration) over the experimental range (10-24 g/cc). Measurements of densimetric Froude number (Fr') indicate Fr' increases downstream to near critical conditions at the channel lobe transition. Our preliminary interpretation is that distributary channels become unstable due to

The TRPC1 Ca2+-permeable channel inhibits exercise-induced protection against high-fat diet-induced obesity and type II diabetes.

Science.gov (United States)

Krout, Danielle; Schaar, Anne; Sun, Yuyang; Sukumaran, Pramod; Roemmich, James N; Singh, Brij B; Claycombe-Larson, Kate J

2017-12-15

The transient receptor potential canonical channel-1 (TRPC1) is a Ca 2+ -permeable channel found in key metabolic organs and tissues, including the hypothalamus, adipose tissue, and skeletal muscle. Loss of TRPC1 may alter the regulation of cellular energy metabolism resulting in insulin resistance thereby leading to diabetes. Exercise reduces insulin resistance, but it is not known whether TRPC1 is involved in exercise-induced insulin sensitivity. The role of TRPC1 in adiposity and obesity-associated metabolic diseases has not yet been determined. Our results show that TRPC1 functions as a major Ca 2+ entry channel in adipocytes. We have also shown that fat mass and fasting glucose concentrations were lower in TRPC1 KO mice that were fed a high-fat (HF) (45% fat) diet and exercised as compared with WT mice fed a HF diet and exercised. Adipocyte numbers were decreased in both subcutaneous and visceral adipose tissue of TRPC1 KO mice fed a HF diet and exercised. Finally, autophagy markers were decreased and apoptosis markers increased in TRPC1 KO mice fed a HF diet and exercised. Overall, these findings suggest that TRPC1 plays an important role in the regulation of adiposity via autophagy and apoptosis and that TRPC1 inhibits the positive effect of exercise on type II diabetes risk under a HF diet-induced obesity environment.

Thermal expansion studies on Hafnium titanate (HfTiO4)

International Nuclear Information System (INIS)

Panneerselvam, G.; Subramanian, G.G.S.; Antony, M.P.

2006-01-01

The lattice thermal expansion characteristics of hafnium titanate (HfTiO 4 ) have been studied by measuring the lattice parameter as a function of temperature by high temperature X-ray diffraction technique (HT-XRD) in the temperature range 298-1973K. Percentage linear thermal expansion and mean linear thermal expansion coefficients were computed from the lattice parameter data. The thermal expansion of HfTiO 4 is highly anisotropic. The expansivity along 'a' axis is large; as compared to the expansivity along 'b' axis which is negative below 1073 K. The percentage linear thermal expansion in the temperature range 298-1973 K along a, b and c axis are 2.74, 0.901 and 1.49 respectively. Thermal expansion values obtained in the present study are in reasonable agreement with the existing thermal expansion data. (author)

Substation interference on gas entrance of industrial plants

Energy Technology Data Exchange (ETDEWEB)

Freire, Paulo Edmundo; Giacommelo, Claudinei [PAIOL Engenharia, Paulinia, SP (Brazil)

2009-12-19

Industrial plants often have medium or high voltage electrical power entrance and also gas feeders. Often the main substation is located near the gas entrance, in the utilities area. When the occurrence of a phase to ground short-circuit in the substation, the pipeline and gas entrance that serves the plant may be exposed to high voltage soil potential, of the order of a few kilovolts, due to resistive coupling with the substation ground mesh. The consequences of this situation are reflected in various risks, with emphasis on: damage to the protective coating of the duct, due to the increased soil potential, in excess of its dielectric supportability (typically on the order of 5 kV); spread of potentially hazardous to duct exposed parts (valves, measuring place etc.); and damage to cathodic protection system components, as rectifier and insulating joins at gas entrance. This paper presents the investigations conducted in a factory that has a 69 kV main substation very close to the gas entrance, the order of a few meters away. The substation phase to ground short-circuit current is 7 kA, what causes a 9 kV soil potential near the gas pipe. It is presented the methodology for modeling the various elements involved in this process, the results of simulations made, arrangements been taken to reduce soil potential next to the duct to levels below 5 kV, and the measures for people and insulating joins protection. It is important to note that such problems usually will be solved with measures involving the entire grounding system of the industrial complex and also close to the duct (outside the industrial plant). The gas distribution companies should require from customers where this situation occurs, to ensure safety for people who have access to elements of its network, and for the integrity of their own ducts and cathodic protection components. The computer simulations developed for this work were made with the software Auto Grid, developed by the Canadian company Safe

Dual Gating Mechanism and Function of P2X7 Receptor Channels

Czech Academy of Sciences Publication Activity Database

Khadra, A.; Tomic, M.; Yan, Z.; Zemková, Hana; Sherman, A.; Stojilkovic, S. S.

2013-01-01

Roč. 104, č. 12 (2013), s. 2612-2621 ISSN 0006-3495 R&D Projects: GA ČR(CZ) GBP304/12/G069 Institutional support: RVO:67985823 Keywords : purinergic P2X7 receptors * ATP-gated channels * BzATP * dilation * Markov -state model Subject RIV: ED - Physiology Impact factor: 3.832, year: 2013

Study of antiferro – ferromagnetic phase coexistence in Ta doped HfFe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Bag, Pallab, E-mail: pallab@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, MP (India); Singh, Sanjay [Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata 700064 (India); Babu, P.D.; Siruguri, Vasudeva [UGC-DAE Consortium for Scientific Research, Mumbai Centre, R-5 Shed, BARC, Mumbai 400085 (India); Rawat, Rajeev [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, MP (India)

2014-09-01

First order antiferromagnetic (AFM) to ferromagnetic (FM) transition in Hf{sub 1−x}Ta{sub x}Fe{sub 2} with x∼0.225 compounds was studied by resistivity, magnetization and X-ray diffraction (XRD) measurements at low temperature. Magnetization measurements as a function of temperature and magnetic field show path dependent FM phase fraction at 5 K for x=0.225. XRD measurements at 15 K show co-existing AFM and FM phases for this composition with ∼0.9% unit cell volume difference of FM and AFM phase.

Formation of the high-spin Hf-179m2 isomer in reactor irradiations

Czech Academy of Sciences Publication Activity Database

Karamian, S. A.; Carroll, J. J.; Adam, Jindřich; Kulagin, EN.; Shabalin, EP.

2004-01-01

Roč. 14, č. 4 (2004), s. 438-441 ISSN 1054-660X R&D Projects: GA MŠk(CZ) ME 134 Keywords : reactor irradiation * high-spin Hf-179m2 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.836, year: 2004

X-ray irradiation activates K+ channels via H2O2 signaling.

Science.gov (United States)

Gibhardt, Christine S; Roth, Bastian; Schroeder, Indra; Fuck, Sebastian; Becker, Patrick; Jakob, Burkhard; Fournier, Claudia; Moroni, Anna; Thiel, Gerhard

2015-09-09

Ionizing radiation is a universal tool in tumor therapy but may also cause secondary cancers or cell invasiveness. These negative side effects could be causally related to the human-intermediate-conductance Ca2+-activated-K+-channel (hIK), which is activated by X-ray irradiation and affects cell proliferation and migration. To analyze the signaling cascade downstream of ionizing radiation we use genetically encoded reporters for H2O2 (HyPer) and for the dominant redox-buffer glutathione (Grx1-roGFP2) to monitor with high spatial and temporal resolution, radiation-triggered excursions of H2O2 in A549 and HEK293 cells. The data show that challenging cells with ≥1 Gy X-rays or with UV-A laser micro-irradiation causes a rapid rise of H2O2 in the nucleus and in the cytosol. This rise, which is determined by the rate of H2O2 production and glutathione-buffering, is sufficient for triggering a signaling cascade that involves an elevation of cytosolic Ca2+ and eventually an activation of hIK channels.

Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mogoda, A.S., E-mail: awad_mogoda@hotmail.com [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt); Ahmad, Y.H.; Badawy, W.A. [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt)

2011-04-15

Research highlights: {yields} Stain etching of p-Si in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4} was investigated. {yields} The electrical conductivity of the etched Si surfaces was measured using impedance technique. {yields} Scanning electron microscope and energy disperse X-ray were used to analyze the etched surfaces. {yields} Etching in aqueous HF solution containing HNO{sub 3} led to formation of a porous silicon layer. {yields} The formation of the porous silicon layer in HF/KMnO{sub 4} was accompanied by deposition of K{sub 2}SiF{sub 6} on the pores surfaces. - Abstract: Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO{sub 3}, while etching in HF solutions containing KMnO{sub 4} led to the formation of a porous layer and simultaneous deposition of K{sub 2}SiF{sub 6} inside the pores. The thickness of K{sub 2}SiF{sub 6} layer increases with increasing the KMnO{sub 4} concentration and decreases as the concentration of HF increases.

Ternary ceramic alloys of Zr-Ce-Hf oxides

Science.gov (United States)

Becher, P.F.; Funkenbusch, E.F.

1990-11-20

A ternary ceramic alloy is described which produces toughening of zirconia and zirconia composites through the stress transformation from tetragonal phase to monoclinic phase. This alloy, having the general formula Ce[sub x]Hf[sub y]Zr[sub 1[minus]x[minus]y]O[sub 2], is produced through the addition of appropriate amounts of ceria and hafnia to the zirconia. Typically, improved toughness is achieved with about 5 to about 15 mol % ceria and up to about 40 mol % hafnia. The preparation of alloys of these compositions are given together with data as to the densities, tetragonal phase content, hardness and fracture toughness. The alloys are useful in preparing zirconia bodies as well as reinforcing ceramic composites. 1 fig.

Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

Energy Technology Data Exchange (ETDEWEB)

Escobar, C.; Villarreal, M. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Caicedo, J.C., E-mail: jcaicedoangulo1@gmail.com [Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingeniería Mecatrónica, Universidad Militar Nueva Granada, Bogotá (Colombia); Caicedo, H.H. [Department of Bioengineering, University of Illinois at Chicago, IL 60612 (United States); Department of Anatomy and Cell Biology, University of Illinois at Chicago, IL 60612 (United States); Prieto, P. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Center of Excellence for Novel Materials, CENM, Cali (Colombia)

2013-10-31

HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN]{sub n} multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm{sup 2} and 0.094*10{sup −3} mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures.

Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

International Nuclear Information System (INIS)

Escobar, C.; Villarreal, M.; Caicedo, J.C.; Aperador, W.; Caicedo, H.H.; Prieto, P.

2013-01-01

HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN] n multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm 2 and 0.094*10 −3 mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

International Nuclear Information System (INIS)

Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

2014-01-01

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The problem of channel dependence in foil-absorption X-ray spectroscopy

International Nuclear Information System (INIS)

Rodriguez-Trelles, F.; Caputo, M.C.

1986-01-01

We analyze the interdependence among measurements of X-ray spectra in the energy range 4-60 keV by a multi-channel instrument. Two methods of estimating it are described. One gives the error magnification expected in spectrum deconvolution resulting from the covariance matrix of the products of filter transmission times detector sensitivity, evaluated over the whole accessible range of photon energies. The other is an extension of the former evaluating the covariance matrices over consecutive energy bands. This extension allows one to analyze channel dependence for each band, thus improving the prospects of filter and detector selection in the design of an experiment. We present tables showing the expected behaviors of several combinations of filters (homogeneous, heterogeneous, doublets, Ross) and detectors (flat, film, diodes). The advantages of heterogeneous filters are emphasized. (orig.)

Anion exchange behavior of Ti, Zr, Hf, Nb and Ta as homologues of Rf and Db in mixed HF-acetone solutions

International Nuclear Information System (INIS)

Aksenov, N.V.; Bozhikov, G.A.; Starodub, G.Ya.; Dmitriev, S.N.; Filosofov, D.V.; Jon Sun Jin; Radchenko, V.I.; Lebedev, N.A.; Novgorodov, A.F.

2009-01-01

We studied in detail the sorption behavior of Ti, Zr, Hf, Nb and Ta on AG 1 anion exchange resin in HF-acetone mixed solutions as a function of organic cosolvent and acid concentrations. Anion exchange behavior was found to be strongly acetone concentration dependent. The distribution coefficients of Ti, Zr, Hf and Nb increased and those of Ta decreased with increasing content of acetone in HF solutions. With increasing HF concentration, anion exchange equilibrium analysis indicated the formation of fluoride complexes of group-4 elements with charge -3 and Ta with charge -2. For Nb the slope of -2 increased up to -5. Optimal conditions for separation of the elements using AIX chromatography were found. Group-4 elements formed MF 7 3- (M = Ti, Zr, Hf) complexes whose sorption decreased Ti > Hf > Zr in reverse order of complex stability. This fact is of particular interest for studying ion exchange behavior of Rf compared to Ti. The advantages of studying chemical properties of Rf and Db in aqueous HF solutions mixed with organic solvents are briefly discussed

Study of entrance channel mass-asymmetry effect on quasi-fission

International Nuclear Information System (INIS)

Rajesh, K.K.; Musthafa, M.M.; Hajara, K.; Muhammed Shan, P.T.; Hosamani, M.M.

2016-01-01

When two different nuclear reaction channels forming same CN are compared, QF is manifested with a strong suppression of ER production for the more symmetric system. The present work compares two nuclear reaction systems leading to same CN "1"8"8Pt viz., "1"9F + "1"6"9Tm and "6"4Ni + "1"2"4Sn, and the QF contributions are estimated for both the cases. Data due to R.J. Charity et al and W.S. Freeman et al are used for calculation. Here the Z_PZ_T value for the most asymmetric system, "1"9F + "1"6"9Tm, is found to be 621 and that for the symmetric system "6"4Ni +"1"2"4Sn is found to be 1400. Theoretical calculations have been performed using statistical code PACE4

Evaluation of entrance skin dose to the skull in diagnostic radiology

International Nuclear Information System (INIS)

Mohamed, Anas Ali Elbushari

2015-12-01

Diagnostic x-ray radiology is a common diagnostic practice.Despite of its increasing hazard to human beings, imaging procedures should be achieved with less radiation dose and sufficient image quality. The aim of this study was to estimate the entrance skin dose(ESD) for patients undergoing selected diagnostic x-ray examinations in four hospitals.The study included the examinations of the skull; posterior- anterior(PA) and lateral projections. Fifty patients were enrolled in this study. ESDs were estimated from patients specific exposure parameters using established relation between output (μGy/mAs) and tube voltage(kVp). The estimated ESDs ranged from 0.0097-0.1846 mGy for skull (PA), 0.0097-0.1399 mGy for skull (LAT). These values were acceptable as compared with the international reference dose levels. This study provides additional data that can help the regulatory authority to establish reference dose levels for diagnostic radiology in Sudan.(Author)

Effective passivation of HfO{sub 2}/Ge interface by using nitrided germanate as passivation interlayer

Energy Technology Data Exchange (ETDEWEB)

Cheng, Zhi Xiang; Xu, Jing Ping; Liu, Lu; Huang, Yong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China); Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Tang, Wing Man [Department of Applied Physics, The Hong Kong Polytechnic University (China)

2017-06-15

Ge metal-oxide-semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), and HfO{sub 2}, as gate dielectric, is proposed to take advantage of both the good passivation effect by LaON and the suppressed intermixing between HfO{sub 2} and Ge by YON. As a result, superior interfacial and electrical properties are obtained, as compared to samples with only YON or LaON as IPL: high k value (19.5), low interface-state density (6.64 x 10{sup 11} cm{sup -2} eV{sup -1}) and oxide-charge density (-4.18 x 10{sup 12} cm{sup -2}), small gate leakage current (1.15 x 10{sup -4} A cm{sup -2} at V{sub g} = V{sub fb} + 1 V), and good high-field reliability. Schematic diagram (a) and C-V curves (b) of the gate stack with YON/LaON dual IPL. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Engineering geologic conditions at the sinkhole entrance to Logan Cave, Benton County, Arkansas

Science.gov (United States)

Schulz, William H.; McKenna, Jonathan P.

2004-01-01

Logan Cave, located in Benton County, Arkansas, is inhabited by several endangered and threatened species. The cave and surrounding area was designated a National Wildlife Refuge under the control of the U.S. Fish and Wildlife Service (USFWS) in 1989. Cave researchers access the cave through a steep-sided sinkhole entrance, which also is one of the two access points used by endangered bats. There is evidence of instability of one of the entrance slopes that has raised concerns that the entrance could close if slope failure was to occur. At the request of USFWS, we performed an engineering geologic investigation of the sinkhole to evaluate stability of this slope, which is comprised of soil, and other mechanisms of sediment transport into the cave entrance. The investigation included engineering geologic mapping, sampling and laboratory testing of subsurface geologic materials, and slope-stability analysis. We found that the sinkhole slope that extends into the entrance of the cave is comprised of sandy and gravelly soil to the depths explored (6.4 meters). This soil likely was deposited as alluvium within a previous, larger sinkhole. Based on properties of the alluvium, geometry of the slope, and results of finite-element slope-stability analyses, we conclude that the slope is marginally stable. Future failures of the slope probably would be relatively thin and small, thus several would be required to completely close the cave entrance. However, sediment is accumulating within the cave entrance due to foot traffic of those accessing the cave, surface-water erosion and transport, and shallow slope failures from the other sinkhole slopes. We conclude that the entrance will be closed by sediment in the future, similar to another entrance that we identified that completely closed in the past. Several measures could be taken to reduce the potential for closure of the cave entrance, including periodic sediment removal, installation of materials that reduce erosion by

Evaluation of radiological protection and dose of skin entrance in paediatric dentistry examinations

International Nuclear Information System (INIS)

Khoury, Helen Jamil; Silveira, Marcia Maria Fonseca da; Couto, Geraldo Bosco Lindoso; Brasileiro, Izabela Vanderley

2005-01-01

In this work the radiological protection conditions and dose at the entrance of pediatric patients undergoing dental intraoral radiographs were evaluated. The study was conducted in two clinics of the dentistry course at the Federal University of Pernambuco, Recife, PB, Brazil, equipped with conventional X-ray apparatus, with 60 and 70 kV. 254 exams of 113 patients between the ages of 3 to 12 years were evaluated. The skin entrance dose was estimated using TLD-100 thermoluminescent dosemeters. During the examination were also recorded information regarding the time of exposure, radiographic technique used, use of thyroid protectors and lead apron, angle and distance of the cone Locator to the patient's skin. The results showed that the input skin doses ranged from 0.3 mGy to 10mGy. The lead apron was used in 71% of exams while the thyroid shield was only used in 58% of the exams. The exposure times ranged from 0,5s to 1,5s. From the results it can be concluded that the radiological procedures are not optimized and that in some cases the patient dose is high.

Boundary conditions for plasma fluid models at the magnetic presheath entrance

International Nuclear Information System (INIS)

Loizu, J.; Ricci, P.; Halpern, F. D.; Jolliet, S.

2012-01-01

The proper boundary conditions at the magnetic presheath entrance for plasma fluid turbulence models based on the drift approximation are derived, focusing on a weakly collisional plasma sheath with T i ≪T e and a magnetic field oblique to a totally absorbing wall. First, the location of the magnetic presheath entrance is rigorously derived. Then boundary conditions at the magnetic presheath entrance are analytically deduced for v ||i , v ||e , n, φ, T e , and for the vorticity ω=∇ ⊥ 2 φ. The effects of E × B and diamagnetic drifts on the boundary conditions are also investigated. Kinetic simulations are performed that confirm the analytical results. Finally, the new set of boundary conditions is implemented in a three-dimensional global fluid code for the simulation of plasma turbulence and, as an example, the results of a tokamak scrape-off layer simulation are discussed. The framework presented can be generalized to obtain boundary conditions at the magnetic presheath entrance in more complex scenarios.

Interaction of N-hydroxyurea with strong proton donors: HCl and HF

International Nuclear Information System (INIS)

Sałdyka, Magdalena

2014-01-01

Highlights: • 1:1 and 1:2 N-hydroxyurea complexes with HCl and HF are trapped in argon matrices. • The complexes are stabilized by strong X–H⋯O bond. • Hydrogen bonds in the cyclic 1:2 complexes show strong cooperativity. • The C=O group is the strongest proton acceptor centre in the N-hydroxyurea molecule. - Abstract: An infrared spectroscopic and MP2/6-311++G(2d,2p) study of strong hydrogen bonded complexes of N-hydroxyurea (NH 2 CONHOH) with hydrogen halides (HCl and HF) trapped in solid argon matrices is reported. 1:1 and 1:2 complexes between N-hydroxyurea and hydrogen chloride, hydrogen fluoride have been identified in the NH 2 CONHOH/HCl/Ar, NH 2 CONHOH/HF/Ar matrices, respectively; their structures were determined by comparison of the spectra with the results of calculations. In the 1:1 complexes, identified for both hydrogen halide molecules, the cyclic structure stabilized by the X–H⋯O and N–H⋯X bonds is present; for the NH 2 CONHOH⋯HF system another isomeric 1:1 complex is also observed. Two 1:2 complexes were identified for the N-hydroxyurea–hydrogen chloride system characterised by the Cl–H⋯O and N–H⋯Cl bonds. The results of the study evidence that N-hydroxyurea is an oxygen base in the gas-phase with the carbonyl group as the strongest proton acceptor centre in the molecule

Interaction of N-hydroxyurea with strong proton donors: HCl and HF

Energy Technology Data Exchange (ETDEWEB)

Sałdyka, Magdalena, E-mail: magdalena.saldyka@chem.uni.wroc.pl

2014-11-24

Highlights: • 1:1 and 1:2 N-hydroxyurea complexes with HCl and HF are trapped in argon matrices. • The complexes are stabilized by strong X–H⋯O bond. • Hydrogen bonds in the cyclic 1:2 complexes show strong cooperativity. • The C=O group is the strongest proton acceptor centre in the N-hydroxyurea molecule. - Abstract: An infrared spectroscopic and MP2/6-311++G(2d,2p) study of strong hydrogen bonded complexes of N-hydroxyurea (NH{sub 2}CONHOH) with hydrogen halides (HCl and HF) trapped in solid argon matrices is reported. 1:1 and 1:2 complexes between N-hydroxyurea and hydrogen chloride, hydrogen fluoride have been identified in the NH{sub 2}CONHOH/HCl/Ar, NH{sub 2}CONHOH/HF/Ar matrices, respectively; their structures were determined by comparison of the spectra with the results of calculations. In the 1:1 complexes, identified for both hydrogen halide molecules, the cyclic structure stabilized by the X–H⋯O and N–H⋯X bonds is present; for the NH{sub 2}CONHOH⋯HF system another isomeric 1:1 complex is also observed. Two 1:2 complexes were identified for the N-hydroxyurea–hydrogen chloride system characterised by the Cl–H⋯O and N–H⋯Cl bonds. The results of the study evidence that N-hydroxyurea is an oxygen base in the gas-phase with the carbonyl group as the strongest proton acceptor centre in the molecule.

Positron annihilation studies in Hf doped YBCO

International Nuclear Information System (INIS)

Gopalan, P.; Priya, E.R.; Premila, M.; Sundar, C.S.; Gopinathan, K.P.

1992-01-01

The variation of positron lifetime and oxygen stoichiometry as a function of quench temperature has been measured in undoped and 0.5at%, 0.75at%, and 1.0 at% Hf doped YBCO. In both the undoped and Hf doped samples, the lifetime decreases and the oxygen content increases as the quench temperature is lowered from 900degC to 300degC. The lifetime in the tetragonal phase (900degC) decreases with the increase in Hf content, whereas in the orthorhombic phase (450degC) it increases. The difference in lifetime between the tetragonal and orthorhombic phases decreases with the increase in the Hf content. These trends are discussed in terms of the influence of Hf doping on the oxygen content and the positron density distribution in YBCO

Electric Field Gradients at Hf and Fe Sites in Hf2Fe Recalculated

International Nuclear Information System (INIS)

Belosevic-Cavor, J.; Cekic, B.; Novakovic, N.; Koteski, V.; Milosevic, Z.

2004-01-01

The electric field gradients (EFG) of the Hf 2 Fe intermetallic compound were calculated using the full-potential linearized augmented plain-wave (FP-LAPW) method as embodied in the WIEN 97 code. The obtained values are compared with other ab-initio calculations and on a qualitative basis with the previously reported experimental data obtained from TDPAC. The calculated results, -23.1.10 21 V/m 2 and 2.7.10 21 V/m 2 for Hf 48f and Fe 32e position, respectively, are in excellent agreement with experimental data (23.4.10 21 V/m 2 and 2.7.10 21 V/m 2 ), better than those reported in earlier calculations. The calculated EFG for Hf 16c position (4.2.10 21 V/m 2 ) is stronger than the experimental one (1.1.10 21 V/m 2 ).

Azeotrope in LiF-HfF4 system

International Nuclear Information System (INIS)

Sorokin, I.D.; Korenev, Yu.M.; Sidorov, L.N.

1975-01-01

The gaseous phase of the system LiF-HfF 4 is investigated by means of isothermal evaporation. Using experimental data, p-X diagrams are constructed for 1125, 1075, 1025, 975 and 925 K. It is shown that the azeotrope with minimum total pressure observed at 1125 K degenerates upon lowering of the temperature and entry into the heterogeneous region. At 975 K the azeotrope corresponds to the point of inflexion from the horizontal tangent on the total pressure curve. At lower temperatures azeotropic distillation is absent from the system. (author)

Modifications to improve entrance slit thermal stability for grasshopper monochromators

Science.gov (United States)

Wallace, Daniel J.; Rogers, Gregory C.; Crossley, Sherry L.

1994-08-01

As new monochromators are designed for high-flux storage rings, computer modeling and thermal engineering can be done to process increased heat loads and achieve mechanical stability. Several older monochromators, such as the Mark 2 and Mark 5 Grasshopper monochromators, which were designed in 1974, have thermal instabilities in their entrance slit mechanisms. The Grasshoppers operating with narrow slits experience closure of the entrance slit from thermal expansion. In extreme cases, the thermal expansion of the precision components has caused permanent mechanical damage, leaving the slit uncalibrated and/or inoperable. For the Mark 2 and Mark 5 Grasshopper monochromators at the Synchrotron Radiation Center, the original 440 stainless steel entrance slit jaws were retrofitted with an Invar (low expansion Fe, Ni alloy) slit jaw. To transfer the heat from the critical components, two flexible heat straps of Cu were attached. These changes allow safe operation with a 10 μm entrance slit width where the previous limit was 30 μm. After an initial 2 min equilibration, the slit remains stable to 10%, with 100 mA of beam current. Additional improvements in slit thermal stability are planned for a third Grasshopper.

Characterization of feed channel spacer performance using geometries obtained by X-ray computed tomography

KAUST Repository

Haaksman, Viktor A.; Siddiqui, Amber; Schellenberg, Carsten; Kidwell, James; Vrouwenvelder, Johannes S.; Picioreanu, Cristian

2016-01-01

design from X-ray computed tomography (CT) scans. The method revealed that the filaments of industrial spacers have a highly variable cross-section size and shape, which impact the flow characteristics in the feed channel. The pressure drop and friction

Doppler shift simulation of scattered HF signals during the Tromsø HF pumping experiment on 16 February 1996

Directory of Open Access Journals (Sweden)

T. D. Borisova

Full Text Available Comparisons between bistatic scatter measurements and simulation results during the Tromsø HF pumping experiment on 16 February 1996 are made. Doppler measurements of an HF diagnostic signal scattered from the field-aligned irregularities (FAIs in the auroral E-region were carried out on the London – Tromsø – St. Petersburg path at 9410 kHz from 21:00 to 22:00 UT. The scattered signals were observed both from natural and artificial ionospheric irregularities located in the vicinity of Tromsø. To simulate the Doppler frequency shifts, f_d , of scattered signals, a radio channel model, named CONE, was developed. The model allows for ray tracing, group and phase paths, and Doppler frequency shift calculations. The calculated Doppler shifts were analyzed for dependence on the magnitude and direction of plasma velocities in the scattering volume. It was found that the velocity components in the north-south direction are crucial for explaining the Doppler frequency shifts of the scattered diagnostic signals. To simulate f_d , real velocities obtained from the EISCAT UHF radar at an altitude of 278 km and from the digital all-sky imager during the experiment were employed. The simulation results of Doppler frequency shift variations with time are in reasonable agreement with the experimental Doppler shifts of scattered signals on the London – Tromsø – St. Petersburg path.

Key words. Ionosphere (active experiments; ionospheric irregularities Radio science (ionospheric propagation

Measurements of Channelling Radiation and its Polarization, X-Ray Excitation, together with Deviations from Landau Distributions

CERN Multimedia

2002-01-01

This experiment is a continuation of the channelling experiments PS164 and WA64. The following points are investigated : \\item a)~Radiation from channelled 1 to 10 GeV/c positrons and electrons. The results clearly show that the region of 1-10 GeV/c is a very important and interesting momentum range where the onset of relativistic effects in connection with the unharmonicity of the channelling potential can give rise to very sharp pea photon spectra which could be used as a radiation source. With a detector opening angle which is large compared to 1/@g, these peaks appear sharp only on the high energy side. If, on the other hand, only forward emitted channelling radiation is detected, nearly symmetric peaks are expected to emerge. This is measured by means of a position sentitive @g-detector, consisting of an CdTe-array. Here each detector is 0.8~x~0.8~x~3~mm|3 and act as an active converter with the final shower absorbed in a large scintillator. Hereby an angular resolution of 1/3~@g around 40~@mrad is obtai...

Supercalculators and University Entrance Calculus Examinations.

Science.gov (United States)

Hong, Ye Yoon; Thomas, Mike; Kiernan, Christine

2000-01-01

Investigates whether the use of computer algebra systems could provide a significant advantage to students taking standard university entrance calculus examinations. Indicates that supercalculators would probably provide a significant advantage, particularly for lower-achieving students. Demonstrates that it is possible to write questions in which…

Ligand Access Channels in Cytochrome P450 Enzymes: A Review

Directory of Open Access Journals (Sweden)

Philippe Urban

2018-05-01

Full Text Available Quantitative structure-activity relationships may bring invaluable information on structural elements of both enzymes and substrates that, together, govern substrate specificity. Buried active sites in cytochrome P450 enzymes are connected to the solvent by a network of channels exiting at the distal surface of the protein. This review presents different in silico tools that were developed to uncover such channels in P450 crystal structures. It also lists some of the experimental evidence that actually suggest that these predicted channels might indeed play a critical role in modulating P450 functions. Amino acid residues at the entrance of the channels may participate to a first global ligand recognition of ligands by P450 enzymes before they reach the buried active site. Moreover, different P450 enzymes show different networks of predicted channels. The plasticity of P450 structures is also important to take into account when looking at how channels might play their role.

Simbol-X Mirror Module Thermal Shields: I-Design and X-Ray Transmission

Science.gov (United States)

Collura, A.; Barbera, M.; Varisco, S.; Basso, S.; Pareschi, G.; Tagliaferri, G.; Ayers, T.

2009-05-01

The Simbol-X mission is designed to fly in formation flight configuration. As a consequence, the telescope has both ends open to space, and thermal shielding at telescope entrance and exit is required to maintain temperature uniformity throughout the mirrors. Both mesh and meshless solutions are presently under study for the shields. We discuss the design and the X-ray transmission.

Simbol-X Mirror Module Thermal Shields: I - Design and X-Ray Transmission

International Nuclear Information System (INIS)

Collura, A.; Varisco, S.; Barbera, M.; Basso, S.; Pareschi, G.; Tagliaferri, G.; Ayers, T.

2009-01-01

The Simbol-X mission is designed to fly in formation flight configuration. As a consequence, the telescope has both ends open to space, and thermal shielding at telescope entrance and exit is required to maintain temperature uniformity throughout the mirrors. Both mesh and meshless solutions are presently under study for the shields. We discuss the design and the X-ray transmission.

Effects of N{sub 2} and NH{sub 3} remote plasma nitridation on the structural and electrical characteristics of the HfO{sub 2} gate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Park, K.-S., E-mail: kunsik@etri.re.kr [RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Baek, K.-H.; Kim, D.P.; Woo, J.-C.; Do, L.-M. [RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); No, K.-S. [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)

2010-12-01

The remote plasma nitridation (RPN) of an HfO{sub 2} film using N{sub 2} and NH{sub 3} has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 deg. C show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO{sub 2} film nitrided with NH{sub 3}-RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfO{sub x}N{sub y} gate dielectric nitrided with NH{sub 3}-RPN have a smaller equivalent oxide thickness than that nitrided with N{sub 2}-RPN in spite of its thicker interfacial layer.

The University Entrance Exam that Diversified and the Problem

Science.gov (United States)

Kondo, Osamu

The percentage of students who go on to universities or junior colleges is over fifty percent which is more than half of high school students. However the nation's birthrate is in decline and the total number of university-age children shows a declining tendency. Hence we cannot expect an increase in the number of applicants in the future. On the other hand, the number of universities has been increasing year by year. The competition among universities to survive is very fierce. The diversification of entrance examination is a symbol of this competition. By diversifying entrance exams, universities aimed at the quality of excellent students in the beginning. However, they have changed their direction to pursue the quantity of students. As of Today the entrance examination is losing its original starting function which means most or all applicants can enter universities. It is time all of the universities return to its starting line.

Theoretical analysis of selectivity mechanisms in molecular transport through channels and nanopores

International Nuclear Information System (INIS)

Agah, Shaghayegh; Pasquali, Matteo; Kolomeisky, Anatoly B.

2015-01-01

Selectivity is one of the most fundamental concepts in natural sciences, and it is also critically important in various technological, industrial, and medical applications. Although there are many experimental methods that allow to separate molecules, frequently they are expensive and not efficient. Recently, a new method of separation of chemical mixtures based on utilization of channels and nanopores has been proposed and successfully tested in several systems. However, mechanisms of selectivity in the molecular transport during the translocation are still not well understood. Here, we develop a simple theoretical approach to explain the origin of selectivity in molecular fluxes through channels. Our method utilizes discrete-state stochastic models that take into account all relevant chemical transitions and can be solved analytically. More specifically, we analyze channels with one and two binding sites employed for separating mixtures of two types of molecules. The effects of the symmetry and the strength of the molecular-pore interactions are examined. It is found that for one-site binding channels, the differences in the strength of interactions for two species drive the separation. At the same time, in more realistic two-site systems, the symmetry of interaction potential becomes also important. The most efficient separation is predicted when the specific binding site is located near the entrance to the nanopore. In addition, the selectivity is higher for large entrance rates into the channel. It is also found that the molecular transport is more selective for repulsive interactions than for attractive interactions. The physical-chemical origin of the observed phenomena is discussed

Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

Science.gov (United States)

Pringle, Spencer Allen

HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any

High energy HF pulsed lasers

International Nuclear Information System (INIS)

Patterson, E.L.; Gerber, R.A.

1976-01-01

Recent experiments show that pulsed HF lasers are capable of producing high energy with good efficiency. Preliminary experiments show that the laser radiation from the high-gain medium can be controlled with a low-power probe laser beam or with low-level feedback. These results indicate that the HF laser may have potential for second-generation laser fusion experiments

Tracking magmatic processes through Zr/Hf ratios in rocks and Hf and Ti zoning in zircons: An example from the Spirit Mountain batholith, Nevada

Science.gov (United States)

Lowery, Claiborne L.E.; Miller, C.F.; Walker, B.A.; Wooden, J.L.; Mazdab, F.K.; Bea, F.

2006-01-01

Zirconium and Hf are nearly identical geochemically, and therefore most of the crust maintains near-chondritic Zr/Hf ratios of ???35-40. By contrast, many high-silica rhyolites and granites have anomalously low Zr/Hf (15-30). As zircon is the primary reservoir for both Zr and Hf and preferentially incorporates Zr, crystallization of zircon controls Zr/ Hf, imprinting low Zr/Hf on coexisting melt. Thus, low Zr/Hf is a unique fingerprint of effective magmatic fractionation in the crust. Age and compositional zonation in zircons themselves provide a record of the thermal and compositional histories of magmatic systems. High Hf (low Zr/ Hf) in zircon zones demonstrates growth from fractionated melt, and Ti provides an estimate of temperature of crystallization (TTiZ) (Watson and Harrison, 2005). Whole-rock Zr/Hf and zircon zonation in the Spirit Mountain batholith, Nevada, document repeated fractionation and thermal fluctuations. Ratios of Zr/Hf are ???30-40 for cumulates and 18-30 for high-SiO2 granites. In zircons, Hf (and U) are inversely correlated with Ti, and concentrations indicate large fluctuations in melt composition and TTiZ (>100??C) for individual zircons. Such variations are consistent with field relations and ion-probe zircon geochronology that indicate a >1 million year history of repeated replenishment, fractionation, and extraction of melt from crystal mush to form the low Zr/Hf high-SiO2 zone. ?? 2006 The Mineralogical Society.

Magnetism and Hyperfine Parameters in Iron Rich Gd_2Fe_{17-x}Si_x Intermetallics

Science.gov (United States)

Nouri, K.; Bartoli, T.; Chrobak, A.; Moscovici, J.; Bessais, L.

2018-04-01

Gd_2Fe_{17-x}Si_x (x = 0.25 , 0.5 and 1) samples were synthesized by arc melting and annealed at 1073 K for 1 week. X-ray diffraction analysis by the Rietveld method has shown that these materials crystallize in the rhombohedral Th_2Zn_{17} -type structure (space group R\\bar{3}m ). The Curie temperature increases with Si content x, whereas the unit-cell parameters decrease slightly. The temperature dependence of magnetization data revealed that Gd_2Fe_{17-x}Si_x exhibits a second-order ferromagnetic to paramagnetic phase transition in the vicinity of the Curie temperature. Exchange coupling parameters of R-R, M-M and R-M (R—rare earth, M—transition metal) have been determined from M(T) magnetization curves based on the mean field theory calculation. The magnetic entropy change Δ S_M and the relative cooling power were estimated from isothermal magnetization curves for all samples. In the proximity of {T}_C and in an applied field of 1.56 T, Δ S_M reached a maximum values of 1.38, 1.67 and 3.07 J/kg K for x = 0.25, 0.5 and 1, respectively. We have calculated the magnetic moment per Fe atom from magnetization measurements at 293 K up to 17 kOe, and it decreases with Si content. These results are verified by the Mössbauer spectrometry measurements obtained at the same temperature. The Mössbauer spectra analysis is based on the correlation between the Wigner-Seitz volume and the isomer-shift evolution of each specific site 6c, 9d, 18f, and 18h of the R\\bar{3} m structure. For all Si concentrations, the magnitude of the hyperfine fields are {H_HF}{6c} > {H_HF}{9d} > {H_HF}{18f} > {H_HF}{18h} . The mean hyperfine field decreases with the Si content.

Effects of Magnetic Particles Entrance Arrange-ments on Mixing Efficiency of a Magnetic Bead Micromixer

Institute of Scientific and Technical Information of China (English)

Reza Kamali∗; Seyed Alireza Shekoohi; Alireza Binesh

2014-01-01

In this study, a computer code is developed to numerically investigate a magnetic bead micromixer under different conditions. The micromixer consists of a microchannel and numerous micro magnetic particles which enter the micromixer by fluid flows and are actuated by an alternating magnetic field normal to the main flow. An important feature of micromixer which is not considered before by researchers is the particle entrance arrangement into the micromixer. This parameter could effectively affect the micromixer efficiency. There are two general micro magnetic particle entrance arrangements in magnetic bead micromixers: determined position entrance and random position entrance. In the case of determined position entrances, micro magnetic particles enter the micromixer at specific positions of entrance cross section. However, in a random position entrance, particles enter the microchannel with no order. In this study mixing efficiencies of identical magnetic bead micromixers which only differ in particle entrance arrangement are numerically investigated and compared. The results reported in this paper illustrate that the prepared computer code can be one of the most powerful and beneficial tools for the magnetic bead micromixer performance analysis. In addition, the results show that some features of the magnetic bead micromixer are strongly affected by the entrance arrangement of the particles.

Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

Science.gov (United States)

Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

2016-12-01

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm 2 @ (V fb  - 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on /I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO 2 . With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on , I on /I off ratio in the magnitude of 10 5 , and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.

Improved magnetic properties and thermal stabilities of Pr-Nd-Fe-B sintered magnets by Hf addition

Science.gov (United States)

Jiang, Qingzheng; Lei, Weikai; Zeng, Qingwen; Quan, Qichen; Zhang, Lili; Liu, Renhui; Hu, Xianjun; He, Lunke; Qi, Zhiqi; Ju, Zhihua; Zhong, Minglong; Ma, Shengcan; Zhong, Zhenchen

2018-05-01

Nd2Fe14B-type permanent magnets have been widely applied in various fields such as wind power, voice coil motors, and medical instruments. The large temperature dependence of coercivity, however, limits their further applications. We have systematically investigated the magnetic properties, thermal stabilities and coercivity mechanisms of the (Pr0.2Nd0.8)13Fe81-xB6Hfx (x=0, 0.5) nanocrystalline magnets fabricated by a spark plasma sintering (SPS) technique. The results indicate that the influence of Hf addition is significant on magnetic properties and thermal stabilities of the (PrNd)2Fe14B-type sintered magnets. It is shown that the sample with x = 0.5 at 300 K has much higher coercivity and remanent magnetization than those counterparts without Hf. The temperature coefficients of remanence (α) and coercivity (β) of the (Pr0.2Nd0.8)13Fe81-xB6Hfx magnets are improved significantly from -0.23 %/K, -0.57 %/K for the sample at x = 0 to -0.17 %/K, -0.49 %/K for the sample at x = 0.5 in the temperature range of 300-400 K. Furthermore, it is found out that the domain wall pinning mechanism is more likely responsible for enhancing the coercivity of the (Pr0.2Nd0.8)13Fe81-xB6Hfx magnets.

Beating HF waves to generate VLF waves in the ionosphere

Science.gov (United States)

Kuo, Spencer; Snyder, Arnold; Kossey, Paul; Chang, Chia-Lie; Labenski, John

2012-03-01

Beat-wave generation of very low frequency (VLF) waves by two HF heaters in the ionosphere is formulated theoretically and demonstrated experimentally. The heater-induced differential thermal pressure force and ponderomotive force, which dominate separately in the D and F regions of the ionosphere, drive an electron current for the VLF emission. A comparison, applying appropriate ionospheric parameters shows that the ponderomotive force dominates in beat-wave generation of VLF waves. Three experiments, one in the nighttime in the absence of D and E layers and two in the daytime in the presence of D and E layers, were performed. X mode HF heaters of slightly different frequencies were transmitted at CW full power. VLF waves at 10 frequencies ranging from 3.5 to 21.5 kHz were generated. The frequency dependencies of the daytime and nighttime radiation intensities are quite similar, but the nighttime radiation is much stronger than the daytime one at the same radiation frequency. The intensity ratio is as large as 9 dB at 11.5 kHz. An experiment directly comparing VLF waves generated by the beat-wave approach and by the amplitude modulation (AM) approach was also conducted. The results rule out the likely contribution of the AM mechanism acting on the electrojet and indicate that beat-wave in the VLF range prefers to be generated in the F region of the ionosphere through the ponderomotive nonlinearity, consistent with the theory. In the nighttime experiment, the ionosphere was underdense to the HF heaters, suggesting a likely setting for effective beat-wave generation of VLF waves by the HF heaters.

Benchmarking a computational fluid dynamics model of separated flow in a thin rectangular channel for use in predictive design analysis

International Nuclear Information System (INIS)

Stovall, T.K.; Crabtree, A.; Felde, D.

1995-01-01

The Advanced Neutron Source (ANS) reactor is being designed to provide a research tool with capabilities beyond those of any existing reactors. One portion of its state-of-the-art design requires high speed fluid flow through narrow channels between the fuel plates in the core. Experience with previous reactors has shown that fuel plate damage can occur when debris becomes lodged at the entrance to these channels. Such debris can disrupt the fluid flow to the plate surfaces and prevent adequate cooling of the fuel. Preliminary ANS designs addressed this issue by providing an unheated entrance length for each fuel plate. In theory, any flow disruption would recover within this unheated length, thus providing adequate heat removal from the downstream heated portions of the fuel plates

P2X7 on mouse T cells: one channel, many functions

Directory of Open Access Journals (Sweden)

Björn eRissiek

2015-05-01

Full Text Available The P2X7 receptor is an adenosine triphosphate (ATP-gated cation channel that is expressed by several cells of the immune system. P2X7 is best known for its proinflammatory role in promoting inflammasome formation and release of mature IL-1β by innate immune cells. Mounting evidence indicates that P2X7 is also an important regulatory receptor of murine and human T cell functions. Murine T cells express a sensitive splice variant of P2X7 that can be activated either by non-covalent binding of ATP or, in the presence of nicotinamide adenine dinucleotide (NAD+, by its covalent ADP-ribosylation catalyzed by the ecto-ADP-ribosyltransferase ARTC2.2. Prolonged activation of P2X7 by either one of these pathways triggers the induction of T cell death. Conversely, lower concentrations of ATP can activate P2X7 to enhance T cell proliferation and production of IL-2. In this review we will highlight the molecular and cellular consequences of P2X7 activation on mouse T cells and its versatile role in T cell homeostasis and activation. Further, we will discuss important differences in the function of P2X7 on human and murine T cells.

Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

Directory of Open Access Journals (Sweden)

Milić Pejović

2013-01-01

Full Text Available Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of 60Co in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5 V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

Thermoelectric properties of doped BaHfO_3

International Nuclear Information System (INIS)

Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

2016-01-01

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Prévessin site – Pedestrian and cycle entrances

CERN Multimedia

GS-IS

2013-01-01

  A second entrance for pedestrians and cyclists on Route du Maroc will be opened and the existing entrance on Chemin du Moulin des Ponts will be re-opened: - for the period 2 April to 31 October 2013, - from 7.00 a.m. to 9.00 a.m. and from 5.00 p.m. to 7.00 p.m. on working days (Monday to Friday). IMPORTANT: all users must show their access cards to the security guard as a matter of course when passing through the gates, both on entering and leaving the site.

Thermodynamics of HfCl4-KCl molten mixtures containing HfCl4 up to 33.3 mol. per cent

International Nuclear Information System (INIS)

Smirnov, M.V.; Salyulev, A.B.; Kudyakov, V.Ya.

1980-01-01

Based on measurements of saturated vapour pressure in components of melted mixtures of HfCl 4 -KCl, depending on temperature and concentration, calculated are the results of changes in activity coefficients of hafnium tetrachloride and potassium chloride on transition from diluted solutions, where the Henry law is met, to those concentrated where the law is disobeyed. Growth in the activity coefficient of HfCl 4 is due to dissociation of complex groups of HfCl 6 2- into complexes with a lesser number of ligands and decreasing relative binding energy of Hf 4+ -Cl - there. In this case, marked changes take place in partial enthalpy and entropy of hafnium tetrachloride mixing. Similar dependences are observed for potassium chloride, but they are expressed considerably weaker. Evaporation enthalpy and entropy are calculated for HfCl 4 and KCl monomers from their melted mixtures of various concentrations

Crystal structures of KM(AsF6)3 (M2+ = Mg, Co, Mn, Zn), KCu(SbF6)3 and [Co(HF)2]Sr[Sr(HF)]2-[Sr(HF)2]2[AsF6]12

International Nuclear Information System (INIS)

Mazej, Zoran; Goreshnik, Evgeny

2015-01-01

The KM(AsF 6 ) 3 (M 2+ = Mg, Co, Mn, Zn) and KCu(SbF 6 ) 3 compounds crystallize isotypically to previously known KNi(AsF 6 ) 3 . The main features of the structure of these compounds are rings of MF 6 octahedra sharing apexes with AsF 6 octahedra connected into infinite tri-dimensional frameworks. In this arrangement cavities are formed where K + cations are placed. Single crystals of CoSr 5 (AsF 6 ) 12 .8HF were obtained as one of the products after the crystallization of 3KF/CoF 2 /SrF 2 mixture in the presence of AsF 5 in anhydrous HF. The CoSr 5 (AsF 6 ) 12 .8HF is monoclinic, C/2c (No.15), with a = 26.773(5) Aa, b = 10.087(2) Aa, c = 21.141(5) Aa, β = 93.296(13) circle , V = 5699.9(19) Aa 3 at 200 K, and Z = 4. There are three crystallographically non-equivalent Sr 2+ cations in the crystal structure of CoSr 5 (AsF 6 ) 12 .8HF. The Sr1 is coordinated by ten fluorine atoms from eight different [AsF 6 ]- anions, meanwhile Sr2 and Sr3 are bound to nine fluorine atoms provided by one HF and eight AsF 6 units or by two HF and six AsF 6 units, respectively. The Co 2+ is coordinated distorted-octahedrally by six fluorine atoms from two HF molecules and four different AsF 6 units. All those moieties in the crystal structure of [Co(HF) 2 ]Sr[Sr(HF)] 2 [Sr(HF) 2 ] 2 [AsF 6 ] 12 are connected into tridimensional framework. The CoSr 5 (AsF 6 ) 12 .8HF is a unique example of compound where HF molecules are directly bound via fluorine atoms to two different metal centres.

The Unimolecular Reactions of CF3CHF2 Studied by Chemical Activation: Assignment of Rate Constants and Threshold Energies to the 1,2-H Atom Transfer, 1,1-HF and 1,2-HF Elimination Reactions, and the Dependence of Threshold Energies on the Number of F-Atom Substituents in the Fluoroethane Molecules.

Science.gov (United States)

Smith, Caleb A; Gillespie, Blanton R; Heard, George L; Setser, D W; Holmes, Bert E

2017-11-22

The recombination of CF 3 and CHF 2 radicals in a room-temperature bath gas was used to prepare vibrationally excited CF 3 CHF 2 * molecules with 101 kcal mol -1 of vibrational energy. The subsequent 1,2-H atom transfer and 1,1-HF and 1,2-HF elimination reactions were observed as a function of bath gas pressure by following the CHF 3 , CF 3 (F)C: and C 2 F 4 product concentrations by gas chromatography using a mass spectrometer as the detector. The singlet CF 3 (F)C: concentration was measured by trapping the carbene with trans-2-butene. The experimental rate constants are 3.6 × 10 4 , 4.7 × 10 4 , and 1.1 × 10 4 s -1 for the 1,2-H atom transfer and 1,1-HF and 1,2-HF elimination reactions, respectively. These experimental rate constants were matched to statistical RRKM calculated rate constants to assign threshold energies (E 0 ) of 88 ± 2, 88 ± 2, and 87 ± 2 kcal mol -1 to the three reactions. Pentafluoroethane is the only fluoroethane that has a competitive H atom transfer decomposition reaction, and it is the only example with 1,1-HF elimination being more important than 1,2-HF elimination. The trend of increasing threshold energies for both 1,1-HF and 1,2-HF processes with the number of F atoms in the fluoroethane molecule is summarized and investigated with electronic-structure calculations. Examination of the intrinsic reaction coordinate associated with the 1,1-HF elimination reaction found an adduct between CF 3 (F)C: and HF in the exit channel with a dissociation energy of ∼5 kcal mol -1 . Hydrogen-bonded complexes between HF and the H atom migration transition state of CH 3 (F)C: and the F atom migration transition state of CF 3 (F)C: also were found by the calculations. The role that these carbene-HF complexes could play in 1,1-HF elimination reactions is discussed.

XAFS atomistic insight of the oxygen gettering in Ti/HfO 2 based OxRRAM

Science.gov (United States)

Viennet, R.; Roussel, H.; Rapenne, L.; Deschanvres, J. L.; Renevier, H.; Jousseaume, V.; Jalaguier, E.; Proietti, M. G.

2018-05-01

Hafnia-based resistive memories technology has come to maturation and acceded to the market of nonvolatile memories. Nevertheless, the physical mechanisms involved in resistive switching are not yet fully understood and the numerous ab initio simulations studies have few many atomic-scale experimental counterparts. In this study we investigate the oxygen migration mechanism from an amorphous HfO2 layer to the Ti cap layer at a local scale before and after a thermal treatment. X-ray absorption spectroscopy at the Ti K edge and Hf LIII edge has been performed on samples as-deposited and annealed in Ar at 400 ∘C to mimic the back-end-of-line thermal budget (BEOL) of CMOS technology. The short-range Ti and Hf environments have been determined, showing that annealing promotes the migration of O from HfO2 to Ti, the amount of which is quantified. This provokes an expansion and an increase of atomic disorder in the Ti lattice. The nature of the oxygen gettering mechanism by the Ti metal is understood by comparing samples with increasing Ti-capping thickness. We show that the Ti getter effect has to be activated by thermal treatment and that the O diffusion takes place in a region of a few nanometers close to the Ti /HfO2 interface. Therefore, the thermal budget history and the Ti cap-layer thickness determine the oxygen vacancy content in the HfO2 layer, which in turn controls the electrical properties, especially the forming operation.

Mathematics for common entrance one answers

CERN Document Server

Alexander, Serena

2015-01-01

Enables efficient assessment of pupils' performance at Levels 1 and 2 of the ISEB 13+ Common Entrance syllabus. Clear layout saves time marking work and identifies areas requiring further attention. Includes diagrams and working where necessary, to demonstrate how to present high-scoring answers in Level 1 and 2 exams

Mathematics for common entrance two answers

CERN Document Server

Alexander, Serena

2015-01-01

Enables efficient assessment of pupils' performance at Levels 1 and 2 of the ISEB 13+ Common Entrance syllabus. Clear layout saves time marking work and identifies areas requiring further attention. Includes diagrams and working where necessary, to demonstrate how to present high-scoring answers in Level 1 and 2 exams.

Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

KAUST Repository

Ahmed, Bilal; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

KAUST Repository

Ahmed, Bilal

2015-06-01

It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zirconium Zr and hafnium Hf

International Nuclear Information System (INIS)

Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

1978-01-01

The basic methods for extracting and determining Zr(4) and Hf(4) are described. Diantipyrinemethane and its alkyl homologs selectively extract Zr and Hf from HNO 3 solutions in the presence of nitrates. Zr is selectively extracted with tetraethyldiamide of heptyl phosphoric acid (in benzene) as well as with 2-thenoyltrifluoroacetone (in an acid). The latter reagents is suitable for rapid determination of 95 Zr in a mixture with 95 Nb and other fragments. The complexometric determination of Zr is based on formation of a stable complex of Zr with EDTA. The titration is carried out in the presence of n-sulfobenzene-azo-pyrocatechol, eriochrome black T. The determination is hindered by Hf, fluoride-, phosphate-, oxalate- and tartrate-ions. The method is used for determining Zr in zircon and eudialyte ore. Zr is determined photometrically with the aid of xylenol orange, arsenazo 3 and pyrocatechol violet (in phosphorites). Hf is determined in the presence of Zr photometrically with the aid of xylenol orange or methyl-thymol blue. The method is based on Zr being masked with hydrogen peroxide in the presence of sulfate-ions

Analyses of desorbed H2O with temperature programmed desorption technique in sol-gel derived HfO2 thin films

International Nuclear Information System (INIS)

Shimizu, H.; Nemoto, D.; Ikeda, M.; Nishide, T.

2009-01-01

Hafnium oxide (HfO 2 ) is a promising material for the gate insulator in highly miniaturized silicon (Si) ultra-large-scale-integration (ULSI) devices (32 nm and beyond). In the field chemistry, a sol-gel processing has been used to fabricate HfO 2 thin film with the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. Temperature-programmed desorption (TPD) has been used not only for analyzing adsorbed gases on the surfaces of bulk sol-gel-derived HfO 2 of sol-gel-derived HfO 2 thin film fired at 350, 450, 550 and 700 deg C in sol-gel derived HfO 2 films in air is investigated using TPD, and also the material characterization of HfO 2 thin films is evaluated by X-ray diffraction (XRD) method. The dielectric constant of the films was also estimated using the capacitance-voltage (C-V) method. TPD is essentially a method of analyzing desorped gases from samples heated by infra-red light as a function of temperature under vacuum conditions using a detector of quadruple mass spectroscopy (QMS). Sol-gel-derived HfO 2 films were fabricated on 76-mm-diameter Si(100) wafers as follows. Hafnia sol solutions were prepared by dissolving HfCl 4 in NH 4 OH solution, followed by the of HCOOH. (author)

Bradykinin Contributes to Sympathetic and Pressor Responses Evoked by Activation of Skeletal Muscle Afferents P2X in Heart Failure

Directory of Open Access Journals (Sweden)

Jihong Xing

2016-11-01

Full Text Available Background/Aims: Published data suggest that purinergic P2X receptors of muscle afferent nerves contribute to the enhanced sympathetic nervous activity (SNA and blood pressure (BP responses during static exercise in heart failure (HF. In this study, we examined engagement of bradykinin (BK in regulating responses of SNA and BP evoked by P2X stimulation in rats with HF. We further examined cellular mechanisms responsible for BK. We hypothesized that BK potentiates P2X currents of muscle dorsal root ganglion (DRG neurons, and this effect is greater in HF due to upregulation of BK kinin B2 and P2X3 receptor. As a result, BK amplifies muscle afferents P2X-mediated SNA and BP responses. Methods: Renal SNA and BP responses were recorded in control rats and rats with HF. Western Blot analysis and patch-clamp methods were employed to examine the receptor expression and function of DRG neurons involved in the effects of BK. Results: BK injected into the arterial blood supply of the hindlimb muscles heightened the reflex SNA and BP responses induced by P2X activation with α,β-methylene ATP to a greater degree in HF rats. In addition, HF upregulated the protein expression of kinin B2 and P2X3 in DRG and the prior application of BK increased the magnitude of α,β-methylene ATP-induced currents in muscle DRG neurons from HF rats. Conclusion: BK plays a facilitating role in modulating muscle afferent P2X-engaged reflex sympathetic and pressor responses. In HF, P2X responsivness is augmented due to increases in expression of kinin B2 and P2X3 receptors and P2X current activity.

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

International Nuclear Information System (INIS)

Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

2015-01-01

The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

Relationship between CCR and NT-proBNP in Chinese HF patients, and their correlations with severity of HF.

Science.gov (United States)

Lu, Zhigang; Wang, Bo; Wang, Yunliang; Qian, Xueqing; Zheng, Wei; Wei, Meng

2014-01-01

To evaluate the relationship between creatinine clearance rate (CCR) and the level of N-terminal pro-B-type natriuretic peptide (NT-proBNP) in heart failure (HF) patients and their correlations with HF severity. Two hundred and one Chinese patients were grouped according to the New York Heart Association (NYHA) classification as NYHA 1-2 and 3-4 groups and 135 cases out of heart failure patients as control group. The following variables were compared among these three groups: age, sex, body mass index (BMI), smoking status, hypertension, diabetes, NT-proBNP, creatinine (Cr), uric acid (UA), left ventricular end-diastolic diameter (LVEDD), and CCR. The biomarkers of NT-proBNP, Cr, UA, LVEDD, and CCR varied significantly in the three groups, and these variables were positively correlated with the NHYA classification. The levels of NT-proBNP and CCR were closely related to the occurrence of HF and were independent risk factors for HF. At the same time, there was a significant negative correlation between the levels of NT-proBNP and CCR. The area under the receiver operating characteristic curve suggested that the NT-proBNP and CCR have high accuracy for diagnosis of HF and have clinical diagnostic value. NT-proBNP and CCR may be important biomarkers in evaluating the severity of HF.

COMPARISON OF THE TEST VARIANTS IN ENTRANCE EXAMINATIONS

Directory of Open Access Journals (Sweden)

KLŮFA, Jindřich

2016-12-01

Full Text Available The paper contains an analysis of the differences of number of points in the test in mathematics between test variants, which were used in the entrance examinations at the Faculty of Business Administration at University of Economics in Prague in 2015. The differences may arise due to the varying difficulty of variants for students, but also because of the different level of knowledge of students who write these variants. This problem we shall study in present paper. The aim of this paper is to study dependence of the results of entrance examinations in mathematics on test variants. The results obtained will be used for further improvement of the admission process at University of Economics.

Transmural expression of ion channels and transporters in human nondiseased and end-stage failing hearts

DEFF Research Database (Denmark)

Soltysinska, Ewa; Olesen, Søren-Peter; Christ, Torsten

2009-01-01

The cardiac action potential is primarily shaped by the orchestrated function of several different types of ion channels and transporters. One of the regional differences believed to play a major role in the progression and stability of the action potential is the transmural gradient of electrica...... cardiac ion channels and transporters which may in part explain the increased susceptibility to arrhythmia in end-state failing hearts....... activity across the ventricular wall. An altered balance in the ionic currents across the free wall is assumed to be a substrate for arrhythmia. A large fraction of patients with heart failure experience ventricular arrhythmia. However, the underlying substrate of these functional changes is not well......-established as expression analyses of human heart failure (HF) are sparse. We have investigated steady-state RNA levels by quantitative polymerase chain reaction of ion channels, transporters, connexin 43, and miR-1 in 11 end-stage HF and seven nonfailing (NF) hearts. The quantifications were performed on endo-, mid...

Action mechanism of hydrogen gas on deposition of HfC coating using HfCl{sub 4}-CH{sub 4}-H{sub 2}-Ar system

Energy Technology Data Exchange (ETDEWEB)

Wang, Yalei, E-mail: yaleipm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); School of Metallurgy and Environment, Central South University, Changsha, 410083 (China); Li, Zehao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Xiong, Xiang, E-mail: xiongx@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Li, Xiaobin [School of Metallurgy and Environment, Central South University, Changsha, 410083 (China); Chen, Zhaoke; Sun, Wei [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China)

2016-12-30

Highlights: • HfC coatings were deposited on C/C composites by LPCVD using HfCl4-CH4-H2-Ar system. • Action mechanism of H2 on structure and growth behavior of HfC coating was studied. • Increased H2 concentration leads to transformation in growth mechanism of coating. - Abstract: Hafnium carbide coatings were deposited on carbon/carbon composites by low pressure chemical vapor deposition using HfCl{sub 4}-CH{sub 4}-H{sub 2}-Ar system. The microstructure, mechanical and ablation resistance performance of HfC coatings deposited with various H{sub 2} concentrations were investigated. The effect of hydrogen gas on the deposition of HfC coating was also discussed. Results show that all of the deposited coatings are composed of single cubic HfC phase, the hydrogen gas acted as a crucial role in determining the preferred orientation, microstructure and growth behavior of HfC coatings. During the deposition process, the gas phase supersaturation of the reaction species can be controlled by adjusting the hydrogen gas concentration. When deposited with low hydrogen gas concentration, the coating growth was dominated by the nucleation of HfC, which results in the particle-stacked structure of HfC coating. Otherwise, the coating growth was dominated by the crystal growth at high hydrogen gas concentration, which leads to the column-arranged structure of HfC coating. Under the ablation environment, the coating C2 exhibits better configurational stability and ablation resistance. The coating structure has a significant influence on the mechanical and ablation resistance properties of HfC coating.

Charged and Neutral Particles Channeling Phenomena Channeling 2008

Science.gov (United States)

Dabagov, Sultan B.; Palumbo, Luigi

2010-04-01

On the discovery of coherent Bremsstrahlung in a single crystal at the Frascati National Laboratories / C. Barbiellini, G. P. Murtas and S. B. Dabagov -- Advances in coherent Bremsstrahlung and LPM-effect studies (to the lOOth anniversary from the birth of L. D. Landau) / N. F. Shul'ga -- Spectra of radiation and created particles at intermediate energy in oriented crystal taking into account energy loss / V. N. Baier and V. M. Katkov -- The coherent Bremsstrahlung beam at MAX-lab facility / K. Fissum ... [et al.] -- Radiation from thin, structured targets (CERN NA63) / A. Dizdar -- Hard incoherent radiation in thick crystals / N. F. Shul'ga, V. V. Syshchenko and A. I. Tarnovsky -- Coherent Bremsstrahlung in periodically deformed crystals with a complex base / A. R. Mkrtchyan, A. A. Saharian and V. V. Parazian -- Induction of coherent x-ray Bremsstrahlung in crystals under the influence of acoustic waves / A. R. Mkrtchyan and V. V. Parazian -- Coherent processes in bent single crystals / V. A. Maisheev -- Experimental and theoretical investigation of complete transfer phenomenon for media with various heat exchange coefficients / A. R. Mkrtchyan, A. E. Movsisyan and V. R. Kocharyan -- Coherent pair production in crystals / A. R. Mkrtchyan, A. A. Saharian and V. V. Parazian -- Negative particle planar and axial channeling and channeling collimation / R. A. Carrigan, Jr. -- CERN crystal-based collimation in modern hadron colliders / W. Scandale -- Studies and application of bent crystals for beam steering at 70 GeV IHEP accelerator / A. G. Afonin ... [et al.] -- Crystal collimation studies at the Tevatron (T-980) / N. V. Mokhov ... [et al.] -- Fabrication of crystals for channeling of particles in accellerators / A. Mazzolari ... [et al.] -- New possibilities to facilitate collimation of both positively and negatively charged particle beams by crystals / V. Guidi, A. Mazzolari and V. V. Tikhomirov -- Increase of probability of particle capture into the channeling

Utilization of antenna arrays in HF systems

Directory of Open Access Journals (Sweden)

Louis Bertel

2009-06-01

Full Text Available

Different applications of radio systems are based on the implementation of antenna arrays. Classically, radio direction

finding operates with a multi channel receiving system connected to an array of receiving antennas. More

recently, MIMO architectures have been proposed to increase the capacity of radio links by the use of antenna

arrays at both the transmitter and receiver.

The first part of this paper describes some novel experimental work carried out to examine the feasibility of applying

MIMO techniques for communications within the HF radio band. A detailed correlation analysis of a variety

of different antenna array configurations is presented. The second section of the paper also deals with HF

MIMO communications, focusing on the problem from a modelling point of view. The third part presents a sensitivity

analysis of different antenna array structures for HF direction finding applications. The results demonstrate

that when modelling errors, heterogeneous antenna arrays are more robust in comparison to homogeneous structures

Evaluation of 1024 channel VUV-photo-diodes for soft x-ray diagnostic applications

International Nuclear Information System (INIS)

Molvik, A.W.