WorldWideScience

Sample records for energy implantation range

  1. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  2. Ion implantation range and energy deposition codes COREL, RASE4, and DAMG2

    International Nuclear Information System (INIS)

    Brice, D.K.

    1977-07-01

    The FORTRAN codes COREL, RASE4 and DAMG2 can be used to calculate quantities associated with ion implantation range and energy deposition distributions within an amorphous target, or for ions incident far from low index directions and planes in crystalline targets. RASE4 calculates the projected range, R/sub p/, the root mean square spread in the projected range, ΔR/sub p/, and the root mean square spread of the distribution perpendicular to the projected range ΔR/sub perpendicular to/. These parameters are calculated as a function of incident ion energy, E, and the instantaneous energy of the ion, E'. They are sufficient to determine the three dimensional spatial distribution of the ions in the target in the Gaussian approximation when the depth distribution is independent of the lateral distribution. RASE4 can perform these calculations for targets having up to four different component atomic species. The code COREL is a short, economical version of RASE4 which calculates the range and straggling variables for E' = 0. Its primary use in the present package is to provide the average range and straggling variables for recoiling target atoms which are created by the incident ion. This information is used by RASE4 in calculating the redistribution of deposited energy by the target atom recoils. The code DAMG2 uses the output from RASE4 to calculate the depth distribution of energy deposition into either atomic processes or electronic processes. With other input DAMG2 can be used to calculate the depth distribution of any energy dependent interaction between the incident ions and target atoms. This report documents the basic theory behind COREL, RASE4 and DAMG2, including a description of codes, listings, and complete instructions for using the codes, and their limitations

  3. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  4. Monte carlo simulation of penetration range distribution of ion beam with low energy implanted in plant seeds

    International Nuclear Information System (INIS)

    Huang Xuchu; Hou Juan; Liu Xiaoyong

    2009-01-01

    The depth and density distribution of V + ion beam implanted into peanut seed is simulated by the Monte Carlo method. The action of ions implanted in plant seeds is studied by the classical collision theory of two objects, the electronic energy loss is calculated by Lindhard-Scharff formulation. The result indicates that the depth of 200keV V + implanted into peanut seed is 5.57μm, which agrees with experimental results, and the model is appropriate to describe this interaction. This paper provides a computational method for the depth and density distribution of ions with low energy implanted in plant seeds. (authors)

  5. COREL, Ion Implantation in Solids, Range, Straggling Using Thomas-Fermi Cross-Sections. RASE4, Ion Implantation in Solids, Range, Straggling, Energy Deposition, Recoils. DAMG2, Ion Implantation in Solids, Energy Deposition Distribution with Recoils

    International Nuclear Information System (INIS)

    Brice, D. K.

    1979-01-01

    1 - Description of problem or function: COREL calculates the final average projected range, standard deviation in projected range, standard deviation in locations transverse to projected range, and average range along path for energetic atomic projectiles incident on amorphous targets or crystalline targets oriented such that the projectiles are not incident along low index crystallographic axes or planes. RASE4 calculates the instantaneous average projected range, standard deviation in projected range, standard deviation in locations transverse to projected range, and average range along path for energetic atomic projectiles incident on amorphous targets or crystalline targets oriented such that the projectiles are not incident along low index crystallographic axes or planes. RASE4 also calculates the instantaneous rate at which the projectile is depositing energy into atomic processes (damage) and into electronic processes (electronic excitation), the average range of target atom recoils projected onto the direction of motion of the projectiles, and the standard deviation in the recoil projected range. DAMG2 calculates the distribution in depth of the energy deposited into atomic processes (damage), electronic processes (electronic excitation), or other energy-dependent quality produced by energetic atomic projectiles incident on amorphous targets or crystalline targets oriented such that the projectiles are not incident along low index crystallographic axes or planes. 2 - Method of solution: COREL: The truncated differential equation which governs the several variables being sought is solved through second-order by trapezoidal integration. The energy-dependent coefficients in the equation are obtained by rectangular integration over the Thomas-Fermi elastic scattering cross section. RASE4: The truncated differential equation which governs the range and straggling variables is solved through second-order by trapezoidal integration. The energy

  6. Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

    Energy Technology Data Exchange (ETDEWEB)

    Friedland, E., E-mail: erich.friedland@up.ac.za

    2017-01-15

    At ion energies with inelastic stopping powers less than a few keV/nm, radiation damage is thought to be due to atomic displacements by elastic collisions only. However, it is well known that inelastic processes and non-linear effects due to defect interaction within collision cascades can significantly increase or decrease damage efficiencies. The importance of these processes changes significantly along the ion trajectory and becomes negligible at some distance beyond the projected range, where damage is mainly caused by slowly moving secondary recoils. Hence, in this region amorphization energies should become independent of the ion type and only reflect the properties of the target lattice. To investigate this, damage profiles were obtained from α-particle channeling spectra of 6H-SiC wafers implanted at room temperature with ions in the mass range 84 ⩽ M ⩽ 133, employing the computer code DICADA. An average amorphization dose of (0.7 ± 0.2) dpa and critical damage energy of (17 ± 6) eV/atom are obtained from TRIM simulations at the experimentally observed boundary positions of the amorphous zones.

  7. High energy ion implantation

    International Nuclear Information System (INIS)

    Ziegler, J.F.

    1985-01-01

    High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

  8. Range distributions in multiply implanted targets

    International Nuclear Information System (INIS)

    Kostic, S.; Jimenez-Rodriguez, J.J.; Karpuzov, D.S.; Armour, D.G.; Carter, G.; Salford Univ.

    1984-01-01

    Range distributions in inhomogeneous binary targets have been investigated both theoretically and experimentally. Silicon single crystal targets [(111) orientation] were implanted with 40 keV Pb + ions to fluences in the range from 5x10 14 to 7.5x10 16 cm -2 prior to bombardment with 80 keV Kr + ions to a fluence of 5x10 15 cm -2 . The samples were analysed using high resolution Rutherford backscattering before and after the krypton implantation in order to determine the dependence of the krypton distribution on the amount of lead previously implanted. The theoretical analysis was undertaken using the formalism developed in [1] and the computer simulation was based on the MARLOWE code. The agreement between the experimental, theoretical and computational krypton profiles is very good and the results indicate that accurate prediction of ranges profiles in inhomogeneous binary targets is possible using available theoretical and computational treatments. (orig.)

  9. High energy P implants in silicon

    International Nuclear Information System (INIS)

    Raineri, V.; Cacciato, A.; Benyaich, F.; Priolo, F.; Rimini, E.; Galvagno, G.; Capizzi, S.

    1992-01-01

    Phosphorus ions in the energy range 0.25-1 MeV and in the dose range 2x10 13 -1x10 15 P/cm 2 were implanted into (100) Si single crystal at different tilt angles. In particular channeling and random conditions were investigated. For comparison some implants were performed on samples with a 2 μm thick surface amorphous layer. Chemical concentration P profiles were obtained by secondary ion mass spectrometry. Carrier concentration and mobility profile measurements were carried out by sheet resistance and Hall measurements on implanted van der Pauw patterns. Carrier concentration profiles were also obtained by spreading resistance (SR) measurements. The damage in the as-implanted samples was determined by backscattering and channeling spectrometry (RBS) as a function of the dose and implantation energy. Comparison of random implants in crystal with implants in amorphous layers shows that in the first case it is impossible to completely avoid the channeling tail. In the implants performed under channeling conditions at low doses the P profiles are flat over more than 2 μm thick layers. Furthermore, by increasing the implanted dose, the shape of the profiles dramatically changes due to the dechanneling caused by the crystal disorder. The data are discussed and compared with Monte Carlo simulations using the MARLOWE code. A simple description of the electronic energy loss provides an excellent agreement between the calculated and experimental profiles. (orig.)

  10. Long range implantation by MEVVA metal ion source

    International Nuclear Information System (INIS)

    Zhang Tonghe; Wu Yuguang; Ma Furong; Liang Hong

    2001-01-01

    Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion implantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. The implanted depth is 311.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific effect on the long-range implantation during high ion flux implantation at transient high target temperature

  11. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  12. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  13. Pulse height defect in ion implanted silicon detector for heavy ions with Z=6-28 in the energy range ∼ 0.25-2.5 MeV/u

    International Nuclear Information System (INIS)

    Diwan, P.K.; Sharma, V.; Shyam Kumar; Avasthi, D.K.

    2005-01-01

    The response of ion implanted silicon detector has been studied for heavy ions with Z= 6-28 in the energy range ∼ 0.25-2.5 MeV/u utilizing the 15UD Pelletron Accelerator facility at Nuclear Science Centre, New Delhi, India. The variation of pulse height in ion implanted silicon detector with projectile's atomic number and its energy have been investigated. It has been observed that pulse height-energy calibration for a given projectile is described well by a linear relationship indicating no pulse height defect with the variation in energy for specific Z projectile. Pulse height defect has been found to increase with increasing projectile atomic number. The mean slope of the collected charge signal versus projectile energy depends significantly on the atomic number of the projectile. (author)

  14. Increased operational range for implantable UHF RFID antennas

    NARCIS (Netherlands)

    Dubok, A.; Smolders, A.B.

    2014-01-01

    This paper discusses the main design challenges of implantable UHF RFID antennas in lossy environments. A novel cylindrical implantable antenna concept is presented. The proposed antenna shows good performance inside lossy environments, like a human body. The RFID tag is able to work in a range up

  15. Channeling effect for low energy ion implantation in Si

    International Nuclear Information System (INIS)

    Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

    1985-01-01

    Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

  16. A Hip Implant Energy Harvester

    Science.gov (United States)

    Pancharoen, K.; Zhu, D.; Beeby, S. P.

    2014-11-01

    This paper presents a kinetic energy harvester designed to be embedded in a hip implant which aims to operate at a low frequency associated with body motion of patients. The prototype is designed based on the constrained volume available in a hip prosthesis and the challenge is to harvest energy from low frequency movements (< 1 Hz) which is an average frequency during free walking of a patient. The concept of magnetic-force-driven energy harvesting is applied to this prototype considering the hip movements during routine activities of patients. The magnetic field within the harvester was simulated using COMSOL. The simulated resonant frequency was around 30 Hz and the voltage induced in a coil was predicted to be 47.8 mV. A prototype of the energy harvester was fabricated and tested. A maximum open circuit voltage of 39.43 mV was obtained and the resonant frequency of 28 Hz was observed. Moreover, the power output of 0.96 μW was achieved with an optimum resistive load of 250Ω.

  17. A Hip Implant Energy Harvester

    International Nuclear Information System (INIS)

    Pancharoen, K; Zhu, D; Beeby, S P

    2014-01-01

    This paper presents a kinetic energy harvester designed to be embedded in a hip implant which aims to operate at a low frequency associated with body motion of patients. The prototype is designed based on the constrained volume available in a hip prosthesis and the challenge is to harvest energy from low frequency movements (< 1 Hz) which is an average frequency during free walking of a patient. The concept of magnetic-force-driven energy harvesting is applied to this prototype considering the hip movements during routine activities of patients. The magnetic field within the harvester was simulated using COMSOL. The simulated resonant frequency was around 30 Hz and the voltage induced in a coil was predicted to be 47.8 mV. A prototype of the energy harvester was fabricated and tested. A maximum open circuit voltage of 39.43 mV was obtained and the resonant frequency of 28 Hz was observed. Moreover, the power output of 0.96 μW was achieved with an optimum resistive load of 250Ω

  18. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  19. Effects of H-implantation energy on the optical stability of implanted usher films under photo-irradiation

    International Nuclear Information System (INIS)

    Awazu, K.; Yasui, H.; Kasamori, M.; Ichikawa, T.; Funada, Y.; Iwaki, M.

    1999-01-01

    A study has been made on the improvement of the optical stability of urushi films under optical irradiation using ion implantation. Ion implantation of hydrogen ions in urushi films was performed with a dose of 10 15 ions/cm 2 at ion energies ranging from 0.2 to 150 keV at room temperature. The photo-irradiation onto the urushi films was carried out at irradiation energies ranging from 40 to 400 MJ/m 2 . H-implantation onto urushi films is useful for improving the optical stability under photo-irradiation when the implantation energy is larger than 60 keV

  20. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  1. High-energy ion implantation of materials

    International Nuclear Information System (INIS)

    Williams, J.M.

    1991-11-01

    High-energy ion implantation is an extremely flexible type of surface treatment technique, in that it offers the possibility of treating almost any type of target material or product with ions of almost any chemical species, or combinations of chemical species. In addition, ion implantations can be combined with variations in temperature during or after ion implantation. As a result, the possibility of approaching a wide variety of surface-related materials science problems exists with ion implantation. This paper will outline factors pertinent to application of high-energy ion implantation to surface engineering problems. This factors include fundamental advantages and limitations, economic considerations, present and future equipment, and aspects of materials science

  2. High fluence effects on ion implantation stopping and range

    International Nuclear Information System (INIS)

    Selvi, S.; Tek, Z.; Oeztarhan, A.; Akbas, N.; Brown, I.G.

    2005-01-01

    We have developed a code STOPPO which can be used to modify the more-widely used ion implantation codes to more accurately predict the mean nuclear and electronic stopping power, preferential sputtering and range of heavy ions in monatomic target materials. In our simulations an effective atomic number and effective atomic mass are introduced into conveniently available analytical stopping cross-sections and a better fitting function for preferential sputtering yield is carefully evaluated for each ion implantation. The accuracy of the code confirmed experimentally by comparison with measured Rutherford backscattering spectrometry (RBS) concentration profiles for 130 keV Zr ions implanted into Be to fluences of 1 x 10 17 , 2 x 10 17 and 4 x 10 17 ions/cm 2 . We find a steady increase in the mean nuclear and electronic stopping powers of the target; the increase in nuclear stopping power is much greater than the increase in electronic stopping power

  3. Monitoring Ion Implantation Energy Using Non-contact Characterization Methods

    Science.gov (United States)

    Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

    2011-01-01

    State-of-the-art ultra-shallow junctions are produced using extremely low ion implant energies, down to the range of 1-3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are suitable for this purpose.

  4. Vacancy supersaturations produced by high-energy ion implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.

    1998-01-01

    A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range (1/2 R p ) of MeV implants. The vacancy clustered region produced by a 2 MeV Si + implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions

  5. Implantation profile of low-energy positrons in solids

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1990-01-01

    A simple form for an implantation profile of monoenergetic, low-energy (1--10 keV) positrons in solids is presented. Materials studied include aluminum, copper, molybdenum, palladium, and gold with atomic number ranging from 13 to 79. A simple set of parameters can describe the currently used Makhov profile in slow positron studies of solids. We provide curves and tables for the parameters that can be used to describe the implantation profiles of positrons in any material with atomic number in between 13 and 79

  6. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  7. Subcutaneous Photovoltaic Infrared Energy Harvesting for Bio-Implantable Devices.

    Science.gov (United States)

    Moon, Eunseong; Blaauw, David; Phillips, Jamie D

    2017-05-01

    Wireless biomedical implantable devices on the mm-scale enable a wide range of applications for human health, safety, and identification, though energy harvesting and power generation are still looming challenges that impede their widespread application. Energy scavenging approaches to power biomedical implants have included thermal [1-3], kinetic [4-6], radio-frequency [7-11] and radiative sources [12-14]. However, the achievement of efficient energy scavenging for biomedical implants at the mm-scale has been elusive. Here we show that photovoltaic cells at the mm-scale can achieve a power conversion efficiency of more than 17 % for silicon and 31 % for GaAs under 1.06 μW/mm 2 infrared irradiation at 850 nm. Finally, these photovoltaic cells demonstrate highly efficient energy harvesting through biological tissue from ambient sunlight, or irradiation from infrared sources such as used in present-day surveillance systems, by utilizing the near infrared (NIR) transparency window between the 650 nm and 950 nm wavelength range [15-17].

  8. Low energy helium implantation of aluminum

    International Nuclear Information System (INIS)

    Wilson, K.L.; Thomas, G.J.

    1976-02-01

    A series of 20 keV He + implantations was conducted on well-annealed MARZ grade aluminum at fluxes of 6 x 10 14 and 6 x 10 13 He + /cm 2 sec. Three distinct, temperature dependent He release mechanisms were found by He re-emission measurements during implantation, and by subsequent SEM and TEM investigations. At 0.08 of the melting temperature (T/sub m/) gas re-emission rose smoothly after a critical dose of 3 x 10 17 He + /cm 2 , with extensive blistering. The intermediate temperature range (approximately 0.3 T/sub m/) was characterized by repeated flake exfoliation and bursts of He after a dose of 3 x 10 17 He + /cm 2 . Rapid He evolution, with hole formation was found above 0.7 T/sub m/. No significant differences in either gas re-emission or surface deformation were found between the two fluxes employed

  9. Energy harvesting by implantable abiotically catalyzed glucose fuel cells

    Science.gov (United States)

    Kerzenmacher, S.; Ducrée, J.; Zengerle, R.; von Stetten, F.

    Implantable glucose fuel cells are a promising approach to realize an autonomous energy supply for medical implants that solely relies on the electrochemical reaction of oxygen and glucose. Key advantage over conventional batteries is the abundant availability of both reactants in body fluids, rendering the need for regular replacement or external recharging mechanisms obsolete. Implantable glucose fuel cells, based on abiotic catalysts such as noble metals and activated carbon, have already been developed as power supply for cardiac pacemakers in the late-1960s. Whereas, in vitro and preliminary in vivo studies demonstrated their long-term stability, the performance of these fuel cells is limited to the μW-range. Consequently, no further developments have been reported since high-capacity lithium iodine batteries for cardiac pacemakers became available in the mid-1970s. In recent years research has been focused on enzymatically catalyzed glucose fuel cells. They offer higher power densities than their abiotically catalyzed counterparts, but the limited enzyme stability impedes long-term application. In this context, the trend towards increasingly energy-efficient low power MEMS (micro-electro-mechanical systems) implants has revived the interest in abiotic catalysts as a long-term stable alternative. This review covers the state-of-the-art in implantable abiotically catalyzed glucose fuel cells and their development since the 1960s. Different embodiment concepts are presented and the historical achievements of academic and industrial research groups are critically reviewed. Special regard is given to the applicability of the concept as sustainable micro-power generator for implantable devices.

  10. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  11. Electronic structure of xenon implanted with low energy in amorphous silicon

    International Nuclear Information System (INIS)

    Barbieri, P.F.; Landers, R.; Oliveira, M.H. de; Alvarez, F.; Marques, F.C.

    2007-01-01

    Electronic structure of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4 N 45 N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix

  12. Effects of high energy nitrogen implantation on stainless steel microstructure

    Science.gov (United States)

    Pelletier, H.; Mille, P.; Cornet, A.; Grob, J. J.; Stoquert, J. P.; Muller, D.

    1999-01-01

    Low energy ion implantation is known to improve chemical and mechanical surface properties of metals. This treatment is often used to enhance wear and corrosion resistance or mechanical life-time of fatigue test of stainless steel or titanium alloys. The aim of this work is to investigate these effects at higher energy, for which deeper (and still not well understood) modifications occur. High fluence (10 18 cm -2) 15N and 14N implantations at 1 MeV have been performed in the 316LL stainless steel and some specimen have been annealed in the 200-500°C temperature range. Nitrogen concentration distribution, structure, morphology and microhardness have been examined with Nuclear Resonance Analysis, Grazing Incidence X-Ray Diffraction and Nanoindentation, respectively. Precipitates of steel and chromium nitride phases and a superficial martensitic transformation can be observed, leading to a significant increase of hardness. The best result is obtained after one hour annealing at 425°C, due to a larger and more homogeneous repartition of nitride species. In this case, a near surface accumulation is observed and explained in terms of diffusion and precipitation mechanisms.

  13. Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

    Science.gov (United States)

    Fonash, S. J.

    1985-01-01

    New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

  14. Long-range effect in nitrogen ion-implanted AISI 316L stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Budzynski, P., E-mail: p.budzynski@pollub.pl

    2015-01-01

    The effect of nitrogen ion implantation on AISI 316L stainless steel was investigated. The microstructure and composition of an N implanted layer were studied by RBS, GIXRD, SEM, and EDX measurements. Friction and wear tests were also performed. The discrepancy between the measured and calculated stopped ion maximum range does not exceed 0.03 μm. After nitrogen implantation with a fluence of 5 × 10{sup 17} ion/cm{sup 2}, additional phases of expanded austenite were detected. At a 5-fold larger depth than the maximum ion range, improvement in the coefficient of friction and wear was detected. We have shown, for the first time, the long-range effect in tribological investigations. The long-range effect is caused by movement of not only defects along the depth of the sample, as assumed so far, but also nitrogen atoms.

  15. Long-range effect in nitrogen ion-implanted AISI 316L stainless steel

    Science.gov (United States)

    Budzynski, P.

    2015-01-01

    The effect of nitrogen ion implantation on AISI 316L stainless steel was investigated. The microstructure and composition of an N implanted layer were studied by RBS, GIXRD, SEM, and EDX measurements. Friction and wear tests were also performed. The discrepancy between the measured and calculated stopped ion maximum range does not exceed 0.03 μm. After nitrogen implantation with a fluence of 5 × 1017 ion/cm2, additional phases of expanded austenite were detected. At a 5-fold larger depth than the maximum ion range, improvement in the coefficient of friction and wear was detected. We have shown, for the first time, the long-range effect in tribological investigations. The long-range effect is caused by movement of not only defects along the depth of the sample, as assumed so far, but also nitrogen atoms.

  16. Low energy implantation of boron with decaborane ions

    Science.gov (United States)

    Albano, Maria Angela

    The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

  17. Transcript of the proceedings of the first Albuquerque informal range/energy workshop

    International Nuclear Information System (INIS)

    Brice, D.K.

    1981-04-01

    An informal workshop was held to discuss aspects of the calculation of range and energy deposition distributions which are of interest in ion implantation experiments. Topics covered include: problems encountered in using published range and energy deposition tabulations; some limitations in the solutions of range/energy transport equations; the effect of the scattering cross section on straggle; Monte Carlo calculations of ranges and straggling; damage studies in aluminum; simulation of heavy-ion irradiation of gold using MARLOWE; and MARLOWE calculations of range distribution parameters - dependence on input data and calculational model

  18. Structural and compositional characterization of LiNbO{sub 3} crystals implanted with high energy iron ions

    Energy Technology Data Exchange (ETDEWEB)

    Sada, C., E-mail: cinzia.sada@unipd.i [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Argiolas, N.; Bazzan, M.; Ciampolillo, M.V.; Zaltron, A.M.; Mazzoldi, P. [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Agarwal, D.C.; Avastshi, D.K. [Inter-University Accelerator Centre, Post Box-10502, New Delhi 110067 (India)

    2010-10-01

    Iron ions were implanted with a total fluence of 6 x 10{sup 17} ions/m{sup 2} into lithium niobate crystals by way of a sequential implantation at different energies of 95, 100 and 105 MeV respectively through an energy retarder Fe foil to get a uniform Fe doping of about few microns from the surface. The implanted crystals were then annealed in air in the range 200-400 {sup o}C for different durations to promote the crystalline quality that was damaged by implantation. In order to understand the basic phenomena underlying the implantation process, compositional in-depth profiles obtained by the secondary ion mass spectrometry were correlated to the structural properties of the implanted region measured by the high resolution X-ray diffraction depending on the process parameters. The optimised preparation conditions are outlined in order to recover the crystalline quality, essential for integrated photorefractive applications.

  19. Energy dependence of polymer gels in the orthovoltage energy range

    Directory of Open Access Journals (Sweden)

    Yvonne Roed

    2014-03-01

    Full Text Available Purpose: Ortho-voltage energies are often used for treatment of patients’ superficial lesions, and also for small- animal irradiations. Polymer-Gel dosimeters such as MAGAT (Methacrylic acid Gel and THPC are finding increasing use for 3-dimensional verification of radiation doses in a given treatment geometry. For mega-voltage beams, energy dependence of MAGAT has been quoted as nearly energy-independent. In the kilo-voltage range, there is hardly any literature to shade light on its energy dependence.Methods: MAGAT was used to measure depth-dose for 250 kVp beam. Comparison with ion-chamber data showed a discrepancy increasing significantly with depth. An over-response as much as 25% was observed at a depth of 6 cm.Results and Conclusion: Investigation concluded that 6 cm water in the beam resulted in a half-value-layer (HVL change from 1.05 to 1.32 mm Cu. This amounts to an effective-energy change from 81.3 to 89.5 keV. Response measurements of MAGAT at these two energies explained the observed discrepancy in depth-dose measurements. Dose-calibration curves of MAGAT for (i 250 kVp beam, and (ii 250 kVp beam through 6 cm of water column are presented showing significant energy dependence.-------------------Cite this article as: Roed Y, Tailor R, Pinksy L, Ibbott G. Energy dependence of polymer gels in the orthovoltage energy range. Int J Cancer Ther Oncol 2014; 2(2:020232. DOI: 10.14319/ijcto.0202.32 

  20. Development of a CMOS process using high energy ion implantation

    International Nuclear Information System (INIS)

    Stolmeijer, A.

    1986-01-01

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  1. MOS memory structures by very-low-energy-implanted Si in thin SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrakis, P.; Kapetanakis, E.; Normand, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Chassaing, D.; Carrada, M.; Soncini, V

    2003-08-15

    The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 deg. C) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages.

  2. Surface-conductivity enhancement of PMMA by keV-energy metal-ion implantation

    International Nuclear Information System (INIS)

    Bannister, M.E.; Hijazi, H.; Meyer, H.M.; Cianciolo, V.; Meyer, F.W.

    2014-01-01

    An experiment has been proposed to measure the neutron electric dipole moment (nEDM) with high precision at the Oak Ridge National Laboratory (ORNL) Spallation Neutron Source. One of the requirements of this experiment is the development of PMMA (Lucite) material with a sufficiently conductive surface to permit its use as a high-voltage electrode while immersed in liquid He. At the ORNL Multicharged Ion Research Facility, an R and D activity is under way to achieve suitable surface conductivity in poly-methyl methacrylate (PMMA) using metal ion implantation. The metal implantation is performed using an electron-cyclotron-resonance (ECR) ion source and a recently developed beam line deceleration module that is capable of providing high flux beams for implantation at energies as low as a few tens of eV. The latter is essential for reaching implantation fluences exceeding 1 × 10 16 cm −2 , where typical percolation thresholds in polymers have been reported. In this contribution, we report results on initial implantation of Lucite by Ti and W beams with keV energies to average fluences in the range 0.5–6.2 × 10 16 cm −2 . Initial measurements of surface-resistivity changes are reported as function of implantation fluence, energy, and sample temperature. We also report X-ray photoelectron spectroscopy (XPS) surface and depth profiling measurements of the ion implanted samples, to identify possible correlations between the near surface and depth resolved implanted W concentrations and the measured surface resistivities

  3. Implantation of keV-energy argon clusters and radiation damage in diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir; Samela, Juha; Nordlund, Kai

    2012-01-01

    We show that for impacting argon clusters, both mean projected ranges of the constituents and depths of radiation damage in diamond scale linearly with momentum. The same dependence was earlier found for keV-energy cluster implantation in graphite, thus suggesting the universality of this scaling...... law. For diamond, a good agreement for the value of displacement energy for the case of cluster impact is found by comparing the calculated target sputtering and experimentally measured depth of radiation damage....

  4. Wide-Range Highly-Efficient Wireless Power Receivers for Implantable Biomedical Sensors

    KAUST Repository

    Ouda, Mahmoud

    2016-11-01

    Wireless power transfer (WPT) is the key enabler for a myriad of applications, from low-power RFIDs, and wireless sensors, to wirelessly charged electric vehicles, and even massive power transmission from space solar cells. One of the major challenges in designing implantable biomedical devices is the size and lifetime of the battery. Thus, replacing the battery with a miniaturized wireless power receiver (WPRx) facilitates designing sustainable biomedical implants in smaller volumes for sentient medical applications. In the first part of this dissertation, we propose a miniaturized, fully integrated, wirelessly powered implantable sensor with on-chip antenna, designed and implemented in a standard 0.18μm CMOS process. As a batteryless device, it can be implanted once inside the body with no need for further invasive surgeries to replace batteries. The proposed single-chip solution is designed for intraocular pressure monitoring (IOPM), and can serve as a sustainable platform for implantable devices or IoT nodes. A custom setup is developed to test the chip in a saline solution with electrical properties similar to those of the aqueous humor of the eye. The proposed chip, in this eye-like setup, is wirelessly charged to 1V from a 5W transmitter 3cm away from the chip. In the second part, we propose a self-biased, differential rectifier with enhanced efficiency over an extended range of input power. A prototype is designed for the medical implant communication service (MICS) band at 433MHz. It demonstrates an efficiency improvement of more than 40% in the rectifier power conversion efficiency (PCE) and a dynamic range extension of more than 50% relative to the conventional cross-coupled rectifier. A sensitivity of -15.2dBm input power for 1V output voltage and a peak PCE of 65% are achieved for a 50k load. In the third part, we propose a wide-range, differential RF-to-DC power converter using an adaptive, self-biasing technique. The proposed architecture doubles

  5. Research on nitrogen implantation energy dependence of the properties of SIMON materials

    International Nuclear Information System (INIS)

    Zhang, E.X.; Sun, J.Y.; Chen, J.; Chen, M.; Zhang, Zh.X.; Li, N.; Zhang, G.Q.; Wang, X.

    2006-01-01

    With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined

  6. High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

    International Nuclear Information System (INIS)

    Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Ryssel, H.; Gyulai, J.

    1992-01-01

    A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams in the energy range from 100 keV to more than 6 MeV with currents up to 100 μA. A large variety of ion species can be implanted into silicon wafers with diameters up to 200 mm (with cassette-to-cassette loading up to 150 mm). The performance characteristics of the system are described with special emphasis on the end stations. In a first series of experiments, the range distributions of boron, phosphorus and arsenic in silicon have been measured for energies from 0.2 MeV to 10 MeV in order to get a data set for future applications. The profiles are compared to simulated data. First experimental results on lateral distribution of the dopant species are presented. (orig.)

  7. The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation

    International Nuclear Information System (INIS)

    Chan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P.; Benistant, F.; Chan, Lap

    2005-01-01

    Being able to accurately predict dopant profiles at sub-keV implant energies is critical for the microelectronic industry. Molecular Dynamics (MD), with its capability to account for multiple interactions as energy lowers, is an increasingly popular simulation method. We report our work on sub-keV implantation using MD and investigate the effect of different interatomic potentials on the range profiles. As an approximation, only pair potentials are considered in this work. Density Functional Theory (DFT) is used to calculate the pair potentials for a wide range of dopants (B, C, N, F, Si, P, Ga, Ge, As, In and Sb) in single crystalline silicon. A commonly used repulsive potential is also included in the study. Importance of the repulsive and attractive regions of the potential has been investigated with different elements and we show that a potential depicting the right attractive forces is especially important for heavy elements at low energies

  8. Formation of SiC using low energy CO2 ion implantation in silicon

    International Nuclear Information System (INIS)

    Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

    2008-01-01

    Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

  9. Damaging Effect of Low Energy N+ Implantation on Aspergillus niger Spores

    International Nuclear Information System (INIS)

    Wang Lisheng; Cai Kezhou; Cheng Maoji; Chen Lijuan; Liu Xuelan; Zhang Shuqing; Yu Zengliang

    2007-01-01

    The mutant effects of a keV range nitrogen ion (N + ) beam on enzyme-producing probiotics were studied, particularly with regard to the induction in the genome. The electron spin resonance (ESR) results showed that the signal of ESR spectrum existed in both implanted and non-implanted spores, and the yields of free radicals increased in a dose-dependent manner. The ionic etching and dilapidation of cell wall could be observed distinctly through the scanning electron microscope (SEM). The mutagenic effect on genome indicated that N + implantation could make base mutation. This study provided an insight into the roles low-energy ions might play in inducing mutagenesis of micro-organisms

  10. Damaging Effect of Low Energy N{sup +} Implantation on Aspergillus niger Spores

    Energy Technology Data Exchange (ETDEWEB)

    Lisheng, Wang [Department of Animal Science and Technology, Anhui Agricultural University, Hefei 230036 (China); Kezhou, Cai [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China); Maoji, Cheng [Department of Animal Science and Technology, Anhui Agricultural University, Hefei 230036 (China); Lijuan, Chen [Department of Animal Science and Technology, Anhui Agricultural University, Hefei 230036 (China); Xuelan, Liu [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China); Shuqing, Zhang [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China); Zengliang, Yu [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China)

    2007-06-15

    The mutant effects of a keV range nitrogen ion (N{sup +}) beam on enzyme-producing probiotics were studied, particularly with regard to the induction in the genome. The electron spin resonance (ESR) results showed that the signal of ESR spectrum existed in both implanted and non-implanted spores, and the yields of free radicals increased in a dose-dependent manner. The ionic etching and dilapidation of cell wall could be observed distinctly through the scanning electron microscope (SEM). The mutagenic effect on genome indicated that N{sup +} implantation could make base mutation. This study provided an insight into the roles low-energy ions might play in inducing mutagenesis of micro-organisms.

  11. X-ray diffraction patterns of single crystals implanted with high-energy light ions

    International Nuclear Information System (INIS)

    Wieteska, K.

    1998-01-01

    X-ray diffraction patterns of silicon and gallium arsenide single crystals implanted with high-energy protons and α-particles were studied. A various models of lattice parameter changes were analysed. The agreement between the simulation and experiment proves that the lattice parameter depth-distribution can be assumed to be proportional to vacancy distribution obtained by Monte-Carlo method and from the Biersack-Ziegler theory. Most of the X-ray experiments were performed using synchrotron source of X-ray radiation in particular in the case of back-reflection and transmission section topographic methods. The new method of direct determination of the implanted ion ranges was proposed using synchrotron radiation back-reflection section topography. A number of new interference phenomena was revealed and explained. These interferences are important in the applications of diffraction theory in studying of the real structure of implanted layers. (author)

  12. Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

    Science.gov (United States)

    Alleyne, Fatima Sierre

    One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective

  13. Non-destructive study of the ion-implantation-affected zone (the long-range effect) in titanium nitride

    International Nuclear Information System (INIS)

    Perry, A.J.; Treglio, J.R.; Schaffer, J.P.; Brunner, J.; Valvoda, V.; Rafaja, D.

    1994-01-01

    The depth to which metal ion implantation can change the structure of titanium nitride coatings is studied using two techniques - positron annihilation spectroscopy (PAS) and glancing-angle X-ray diffraction (GA-XRD) -which are normally applied to the study of bulk materials. The PAS results indicate that the depth to which vacancies are found greatly exceeds the depth at which the implanted material resides. In addition, the concentration of vacancies continues to increase with the dose of implanted ions. The GA-XRD data show that the implantation does not change the residual stress - it remains slightly tensile. Furthermore, there is an increase in the diffraction peak broadening, which is attributed to an increase in the local strain distribution resulting from the generation of a dislocation network at depths of up to several tenths of a micrometer below the implanted zone. The data support the view of a long-range effect, where metal ion implantation causes lattice defect generation within an implantation-affected zone (IAZ) to depths well beyond the implanted zone. The defective nature of the IAZ depends on the implanted dose and the acceleration voltage, as well as on the nature of the ions implanted. In the present work, there is no residual stress in the samples, so this cannot induce the IAZ. ((orig.))

  14. High-intensity low energy titanium ion implantation into zirconium alloy

    Science.gov (United States)

    Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

    2018-05-01

    This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

  15. Implanted strontium titanate single crystals for energy storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Stoeber, Max; Cherkouk, Charaf; Walter, Juliane; Strohmeyer, Ralph; Leisegang, Tilmann; Meyer, Dirk Carl [TU Bergakademie, Freiberg (Germany); Schelter, Matthias; Zosel, Jens [Kurt Schwabe Institute, Meinsberg (Germany); Prucnal, Slawomir [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2016-07-01

    A rapid increase of the demand on efficient energy storage solutions requires new approaches beyond the Li-ion technology. In particular, metal-air batteries as well as solid-state fuel cells offer a great potential for high-energy-density storage devices. Since the efficiency of such devices is significantly limited by the activation of both the oxygen reduction reaction (ORR) and the ionic and electronic conductivities, an adequate porosity as well as a controlled doping are required. The ion implantation is a key technology to achieve this goal. In this work, p- and n-doped strontium titanate (SrTiO{sub 3}) single crystals were used as oxidic materials. The oxygen exchange kinetics as well as the structural changes of the SrTiO{sub 3} crystal surface induced by the ion implantation were investigated. On one hand, the depth profile of dopant concentration and dopant valence state were determined using sputtered X-ray photoelectron spectroscopy (XPS). On the other hand, the overall oxygen exchange kinetic of the implanted SrTiO{sub 3} crystal was quantitatively described by means of coulometric titration using Zirox system (ZIROX GmbH, Germany). Furthermore, the surface morphology of the samples was investigated using atomic force microscopy (AFM).

  16. Clinical research of phacoemulsification with posterior chamber intraocular lens implantation for glaucoma with different goniosynechia ranges

    Directory of Open Access Journals (Sweden)

    Qing-Yu Li

    2016-02-01

    Full Text Available AIM:To study the effect of phacoemulsification with posterior chamber intraocular lens implantation to treat glaucoma with different angle-closure range, which may provide a better way to treat the angle-closure glaucoma.METHODS:There were 47 cases(54 eyeswith angle-closure glaucoma, and all of them underwent phacoemulsification and posterior chamber intraocular lens implantation. According to the range of goniosynechia, these patients were divided into three groups:the eyes with the range of goniosynechia≤1/2 were group A(13 eyes; the eyes with 1/23/4 were group C(23 eyes. We observed the status of anterior chamber angle and the intraocular pressure(IOPof the three groups at 2wk after operations. RESULTS:Compared to the preoperative condition, the IOP of the three groups at 2wk after operations decreased significantly. The IOP reductions of group B and C were more significant than that of group A, and the differences were significant(PPP3/4 appeared in group B; in group C, there were 5 eyes with goniosynechia>3/4, 1 eye with disappeared anterior chamber, 3 eyes with corneal edema, 1 eye with choroidal hemorrhage. The differences of postoperative complication rate among the three groups was statistically significant(PPCONCLUSION:For patients with angle closure glaucoma who have mild to moderate goniosynechia, phacoemulsification with posterior chamber intraocular lens implantation is an effective way. After operations, their closed anterior angle reopened. But to the patients with severe adhesions, there are more complications after operations, especially the glaucoma may reoccur.

  17. Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

    International Nuclear Information System (INIS)

    Whelan, S.; La Magna, A.; Privitera, V.; Mannino, G.; Italia, M.; Bongiorno, C.; Fortunato, G.; Mariucci, L.

    2003-01-01

    Excimer laser annealing (ELA) of ultra-low-energy (ULE) B-ion implanted Si has been performed. High-resolution transmission electron microscopy has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been investigated as a function of the laser energy density (melted depth), the implant dose, and the number of laser pulses (melt time). The activated and retained dose has been evaluated with spreading resistance profiling and secondary ion mass spectrometry. A significant amount of the implanted dopant was lost from the sample during ELA. However, the dopant that was retained in crystal material was fully activated following rapid resolidification. At an atomic concentration below the thermodynamic limit, the activation efficiency (dose activated/dose implanted into Si material) was a constant for a fixed melt depth, irrespective of the dose implanted and hence the total activated dose was raised as the implant dose was increased. The electrical activation was increased for high laser energy density annealing when the dopant was redistributed over a deeper range

  18. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  19. Wireless energy transfer platform for medical sensors and implantable devices.

    Science.gov (United States)

    Zhang, Fei; Hackworth, Steven A; Liu, Xiaoyu; Chen, Haiyan; Sclabassi, Robert J; Sun, Mingui

    2009-01-01

    Witricity is a newly developed technique for wireless energy transfer. This paper presents a frequency adjustable witricity system to power medical sensors and implantable devices. New witricity resonators are designed for both energy transmission and reception. A prototype platform is described, including an RF power source, two resonators with new structures, and inductively coupled input and output stages. In vitro experiments, both in open air and using a human head phantom consisting of simulated tissues, are employed to verify the feasibility of this platform. An animal model is utilized to evaluate in vivo energy transfer within the body of a laboratory pig. Our experiments indicate that witricity is an effective new tool for providing a variety of medical sensors and devices with power.

  20. Energy harvesting for human wearable and implantable bio-sensors.

    Science.gov (United States)

    Mitcheson, Paul D

    2010-01-01

    There are clear trade-offs between functionality, battery lifetime and battery volume for wearable and implantable wireless-biosensors which energy harvesting devices may be able to overcome. Reliable energy harvesting has now become a reality for machine condition monitoring and is finding applications in chemical process plants, refineries and water treatment works. However, practical miniature devices that can harvest sufficient energy from the human body to power a wireless bio-sensor are still in their infancy. This paper reviews the options for human energy harvesting in order to determine power availability for harvester-powered body sensor networks. The main competing technologies for energy harvesting from the human body are inertial kinetic energy harvesting devices and thermoelectric devices. These devices are advantageous to some other types as they can be hermetically sealed. In this paper the fundamental limit to the power output of these devices is compared as a function of generator volume when attached to a human whilst walking and running. It is shown that the kinetic energy devices have the highest fundamental power limits in both cases. However, when a comparison is made between the devices using device effectivenesses figures from previously demonstrated prototypes presented in the literature, the thermal device is competitive with the kinetic energy harvesting device when the subject is running and achieves the highest power density when the subject is walking.

  1. Range energy for heavy ions in CR-39

    International Nuclear Information System (INIS)

    Gil, L.R.; Marques, A.

    1987-01-01

    Range-energy relations in CR-39, for ions from He to Ar, are obtained after their effective nuclear charge. Comparison with earlier calculations and numerical results in the energy range 0,1 to 200 Mev/ Nucleon are also given. (M.W.O.)

  2. Variable-energy positron-beam studies of Ni implanted with He

    International Nuclear Information System (INIS)

    Lynn, K.G.; Chen, D.M.; Nielsen, B.; Pareja, R.; Myers, S.

    1986-01-01

    Variable-energy positron-beam studies have been made on well-annealed polycrystalline Ni samples implanted with 30-, 90-, and 180-keV 4 He ions. The positron-annihilation characteristics were measured with a solid-state Ge detector at a number of different incident-positron energies and after isochronal annealing at various temperatures. The Doppler broadening of the annihilation photons was found to be strongly influenced by the 4 He implantations. The data indicate that trapping of the positrons occurred predominantly at small He bubbles. The variation of the broadening with incident-positron energy was sensitive to the depth distribution of the traps. A diffusion model assuming a square concentration-defect profile was developed and analytically fitted to the parametrized momentum data. These fitted results were compared to Monte Carlo range calculations for 4 He in Ni, and fairly good agreement was found. This investigation demonstrates the capabilities of positron annihilation for nondestructive depth profiling in ion-implanted systems. In addition, it establishes parallels between the trapping behavior of positrons and that reported elsewhere for hydrogen, thereby augmenting the present level of understanding of the technologically important trapping of hydrogen by the bubbles

  3. High energy ion range and deposited energy calculation using the Boltzmann-Fokker-Planck splitting of the Boltzmann transport equation

    International Nuclear Information System (INIS)

    Mozolevski, I.E.

    2001-01-01

    We consider the splitting of the straight-ahead Boltzmann transport equation in the Boltzmann-Fokker-Planck equation, decomposing the differential cross-section into a singular part, corresponding to small energy transfer events, and in a regular one, which corresponds to large energy transfer. The convergence of implantation profile, nuclear and electronic energy depositions, calculated from the Boltzmann-Fokker-Planck equation, to the respective exact distributions, calculated from Monte-Carlo method, was exanimate in a large-energy interval for various values of splitting parameter and for different ion-target mass relations. It is shown that for the universal potential there exists an optimal value of splitting parameter, for which range and deposited energy distributions, calculated from the Boltzmann-Fokker-Planck equation, accurately approximate the exact distributions and which minimizes the computational expenses

  4. Range verification for eye proton therapy based on proton-induced x-ray emissions from implanted metal markers

    Science.gov (United States)

    La Rosa, Vanessa; Kacperek, Andrzej; Royle, Gary; Gibson, Adam

    2014-06-01

    Metal fiducial markers are often implanted on the back of the eye before proton therapy to improve target localization and reduce patient setup errors. We aim to detect characteristic x-ray emissions from metal targets during proton therapy to verify the treatment range accuracy. Initially gold was chosen for its biocompatibility properties. Proton-induced x-ray emissions (PIXE) from a 15 mm diameter gold marker were detected at different penetration depths of a 59 MeV proton beam at the CATANA proton facility at INFN-LNS (Italy). The Monte Carlo code Geant4 was used to reproduce the experiment and to investigate the effect of different size markers, materials, and the response to both mono-energetic and fully modulated beams. The intensity of the emitted x-rays decreases with decreasing proton energy and thus decreases with depth. If we assume the range to be the depth at which the dose is reduced to 10% of its maximum value and we define the residual range as the distance between the marker and the range of the beam, then the minimum residual range which can be detected with 95% confidence level is the depth at which the PIXE peak is equal to 1.96 σbkg, which is the standard variation of the background noise. With our system and experimental setup this value is 3 mm, when 20 GyE are delivered to a gold marker of 15 mm diameter. Results from silver are more promising. Even when a 5 mm diameter silver marker is placed at a depth equal to the range, the PIXE peak is 2.1 σbkg. Although these quantitative results are dependent on the experimental setup used in this research study, they demonstrate that the real-time analysis of the PIXE emitted by fiducial metal markers can be used to derive beam range. Further analysis are needed to demonstrate the feasibility of the technique in a clinical setup.

  5. Near-infrared optical properties of Yb3+-doped silicate glass waveguides prepared by double-energy proton implantation

    Science.gov (United States)

    Shen, Xiao-Liang; Zhu, Qi-Feng; Zheng, Rui-Lin; Lv, Peng; Guo, Hai-Tao; Liu, Chun-Xiao

    2018-03-01

    We report on the preparation and properties of an optical planar waveguide structure operating at 1539 nm in the Yb3+-doped silicate glass. The waveguide was formed by using (470 + 500) keV proton implantation at fluences of (1.0 + 2.0) × 1016 ions/cm2. The waveguiding characteristics including the guided-mode spectrum and the near-field image were investigated by the m-line technique and the finite-difference beam propagation method. The energy distribution for implanted protons and the refractive index profile for the proton-implanted waveguide were simulated by the stopping and range of ions in matter and the reflectivity calculation method. The proton-implanted Yb3+-doped silicate glass waveguide is a candidate for optoelectronic elements in the near-infrared region.

  6. Surface potential measurement of negative-ion-implanted insulators by analysing secondary electron energy distribution

    International Nuclear Information System (INIS)

    Toyota, Yoshitaka; Tsuji, Hiroshi; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki.

    1994-01-01

    The negative ion implantation method we have proposed is a noble technique which can reduce surface charging of isolated electrodes by a large margin. In this paper, the way to specify the surface potential of negative-ion-implanted insulators by the secondary electron energy analysis is described. The secondary electron energy distribution is obtained by a retarding field type energy analyzer. The result shows that the surface potential of fused quartz by negative-ion implantation (C - with the energy of 10 keV to 40 keV) is negatively charged by only several volts. This surface potential is extremely low compared with that by positive-ion implantation. Therefore, the negative-ion implantation is a very effective method for charge-up free implantation without charge compensation. (author)

  7. Predicting Low Energy Dopant Implant Profiles in Semiconductors using Molecular Dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    The authors present a highly efficient molecular dynamics scheme for calculating dopant density profiles in group-IV alloy, and III-V zinc blende structure materials. Their scheme incorporates several necessary methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and pair specific screened Coulomb potentials. Accumulative damage is accounted for using a Kinchin-Pease type model, inelastic energy loss is represented by a Firsov expression, and electronic stopping is described by a modified Brandt-Kitagawa model which contains a single adjustable ion-target dependent parameter. Thus, the program is easily extensible beyond a given validation range, and is therefore truly predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy and to situations where a predictive capability is required with the minimum of experimental validation. They give examples of using the code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon and gallium-arsenide. Here they can predict the experimental profile over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  8. High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

    Science.gov (United States)

    Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

    1998-05-01

    Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

  9. Comparison of visual outcomes after bilateral implantation of extended range of vision and trifocal intraocular lenses.

    Science.gov (United States)

    Ruiz-Mesa, Ramón; Abengózar-Vela, Antonio; Aramburu, Ana; Ruiz-Santos, María

    2017-06-26

    To compare visual outcomes after cataract surgery with bilateral implantation of 2 intraocular lenses (IOLs): extended range of vision and trifocal. Each group of this prospective study comprised 40 eyes (20 patients). Phacoemulsification followed by bilateral implantation of a FineVision IOL (group 1) or a Symfony IOL (group 2) was performed. The following outcomes were assessed up to 1 year postoperatively: binocular uncorrected distance visual acuity (UDVA), binocular uncorrected intermediate visual acuity (UIVA) at 60 cm, binocular uncorrected near visual acuity (UNVA) at 40 cm, spherical equivalent (SE) refraction, defocus curves, mesopic and photopic contrast sensitivity, halometry, posterior capsule opacification (PCO), and responses to a patient questionnaire. The mean binocular values in group 1 and group 2, respectively, were SE -0.15 ± 0.25 D and -0.19 ± 0.18 D; UDVA 0.01 ± 0.03 logMAR and 0.01 ± 0.02 logMAR; UIVA 0.11 ± 0.08 logMAR and 0.09 ± 0.08 logMAR; UNVA 0.06 ± 0.07 logMAR and 0.17 ± 0.06 logMAR. Difference in UNVA between IOLs (pvisual outcomes. The FineVision IOL showed better near visual acuity. Predictability of the refractive results and optical performance were excellent; all patients achieved spectacle independence. The 2 IOLs gave similar and good contrast sensitivity in photopic and mesopic conditions and low perception of halos by patients.

  10. Energy-range relations for hadrons in nuclear matter

    Science.gov (United States)

    Strugalski, Z.

    1985-01-01

    Range-energy relations for hadrons in nuclear matter exist similarly to the range-energy relations for charged particles in materials. When hadrons of GeV kinetic energies collide with atomic nuclei massive enough, events occur in which incident hadron is stopped completely inside the target nucleus without causing particle production - without pion production in particular. The stoppings are always accompanied by intensive emission of nucleons with kinetic energy from about 20 up to about 400 MeV. It was shown experimentally that the mean number of the emitted nucleons is a measure of the mean path in nuclear matter in nucleons on which the incident hadrons are stopped.

  11. Long-range outlook of energy demands and supplies

    International Nuclear Information System (INIS)

    1984-01-01

    An interim report on the long-range outlook of energy demands and supplies in Japan as prepared by an ad hoc committee, Advisory Committee for Energy was given for the period up to the year 2000. As the energy demands in terms of crude oil, the following figures are set: 460 million kl for 1990, 530 million kl for 1995, and 600 million kl for 2000. In Japan, without domestic energy resources, over 80% of the primary energy has been imported; the reliance on Middle East where political situation is unstable, for petroleum is very large. The following things are described. Background and policy; energy demands in industries, transports, and people's livelihood; energy supplies by coal, nuclear energy, petroleum, etc.; energy demand/supply outlook for 2000. (Mori, K.)

  12. Martensitic transformation of type 304 stainless steel by high-energy ion implantation

    International Nuclear Information System (INIS)

    Chayahara, A.; Satou, M.; Nakashima, S.; Hashimoto, M.; Sasaki, T.; Kurokawa, M.; Kiyama, S.

    1991-01-01

    The effect of high-energy ion implantation on the structural changes of type 304 stainless steel were investigated. Gold, copper and silicon ions with an energy of 1.5 MeV was implanted into stainless steel. The fluences were in the range from 5x10 15 to 10 17 ions/cm 2 . It was found that the structure of stainless steel was transformed form the austenitic to the martensitic structure by these ion implantations. This structural change was investigated by means of X-ray diffraction and transmission electron microscopy (TEM). The depth profile of the irradiated ions was also analyzed by secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS). The degree of martensitic transformation was found to be strongly dependent on the surface pretreatment, either mechanical or electrolytic polishing. When the surface damages or strains by mechanical polishing were present, the martensitic transformation was greatly accelerated presumably due to the combined action of ion irradiation and strain-enhanced transformation. Heavier ions exhibit a high efficiency for the transformation. (orig.)

  13. Thermal desorption and bombardment-induced release of deuterium implanted into stainless steels at low energy

    International Nuclear Information System (INIS)

    Farrell, G.; Donnelly, S.E.

    1978-01-01

    Thermal desorption spectra have been obtained for low energy (15-750 eV) deuterons implanted into types 321 and 304 stainless steel, to total fluences in the range 10 13 - 10 17 deuterons/cm 2 . In each case the spectra show a peak at about 350 K, but in the 321 steel there is a second peak in the region of 900 K, the population and peak temperature of which increase with energy. Activation energies of 0.99 and 2.39 eV and a rate constant of 7 x 10 15 /s have been derived for the peaks and it is thought that the first peak corresponds to release from sites close to the surface, while the second peak may be related to trapping at impurities such as Ti. Measurements have also been made of the release of deuterium resulting from post-implantation bombardment with hydrogen ions. It is found that depletion of the first peak in the 321 steel is the result of gas sputtering, but depletion of the second peak is the result of the formation of HD during desorption, while depletion of the peak in the 304 stainless steel also results from HD formation even though this peak is the same as the first peak in the 321 steel. Estimates have also been made of the deuterium self-sputtering cross section at various energies, which show a monotonic decrease as energy increases. (Auth.)

  14. Battery electric vehicle energy consumption modelling for range estimation

    NARCIS (Netherlands)

    Wang, J.; Besselink, I.J.M.; Nijmeijer, H.

    2017-01-01

    Range anxiety is considered as one of the major barriers to the mass adoption of battery electric vehicles (BEVs). One method to solve this problem is to provide accurate range estimation to the driver. This paper describes a vehicle energy consumption model considering the influence of weather

  15. Magnesium aluminate planar waveguides fabricated by C-ion implantation with different energies and fluences

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Lian; Yu, Xiao-Fei; Zhang, Lian; Wang, Tie-Jun; Qiao, Mei; Zhang, Jing; Liu, Peng; Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn

    2015-11-01

    We report on MgAl{sub 2}O{sub 4} planar waveguides produced using different energies and fluences of C-ion implantation at room temperature. Based on the prism coupling method and end-face coupling measurements, light could propagate in the C-ion-implanted samples. The Raman spectra results indicate that the MgAl{sub 2}O{sub 4} crystal lattice was damaged during the multi-energy C implantation process, whereas the absorption spectra were hardly affected by the C-ion implantation in the visible and infrared bands.

  16. Mass and energy deposition effects of implanted ions on solid sodium formate

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xiangqin E-mail: clshao@mail.ipp.ac.cn; Shao Chunlin; Yao Jianming; Yu Zengliang

    2000-07-01

    Solid sodium formate was implanted by low energy N{sup +}, H{sup +}, and Ar{sup +} ions. Measured with electron paramagnetic resonance (EPR) and Fourier-transform infrared (FT-IR), it was observed that new -CH{sub 2}-, -CH{sub 3}- groups and COO{sup -} radical ion were produced in the implanted sodium formate. Analyzing with the highly sensitive ninhydrin reaction, it was found that a new -NH{sub 2} functional group was formed upon N{sup +} ion implantation, and its yield increased along with implantation dose but decreased with the ion's energy.

  17. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  18. Long-range prospects of world energy demands and future energy sources

    International Nuclear Information System (INIS)

    Kozaki, Yasuji

    1998-01-01

    The long-range prospects for world energy demands are reviewed, and the major factors which are influential in relation to energy demands are discussed. The potential for various kinds of conventional and new energy sources such as fossil fuels, solar energies, nuclear fission, and fusion energies to need future energy demands is also discussed. (author)

  19. Radiation damage in urania crystals implanted with low-energy ions

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Tien Hien, E-mail: tien-hien.nguyen@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Nowicki, Lech [The Andrzej Soltan Institute for Nuclear Studies, Hoza 69, 00-681 Warsaw (Poland); Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France)

    2014-05-01

    Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO{sub 2} (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO{sub 2} crystals under irradiation unseen by the measurement of RDA.

  20. Vacancy-type defects and their annealing processes in ion-implanted Si studied by a variable-energy positron beam

    International Nuclear Information System (INIS)

    Uedono, A.; Wei, L.; Tanigawa, S.; Sugiura, J.; Ogasawara, M.

    1992-01-01

    Vacancy-type defects in B + -, P + - and Si + -ion implanted SiO 2 (43 nm)/Si(100) and Si(100) were studied by a variable-energy positron beam. Depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. For 200-keV P + -implanted specimen with a dose of 5 x 10 13 P/cm 2 , the damaged layers induced by ion-implantation were found to extend far beyond the stopping range of P-atoms. For 80-keV B + -implanted SiO 2 (43 nm)/Si(100) specimens with different ion-currents, an increase of the ion-current introduced a homogeneous amorphous layer in the subsurface region. Dominant defect species in B + - and P + -implanted specimen were identified as vacancy clusters from their annealing behavior. (author)

  1. Range and energy functions of interest in neutron dosimetry

    International Nuclear Information System (INIS)

    Bhatia, D.P.; Nagarajan, P.S.

    1978-01-01

    This report documents the energy and range functions generated and used in fast neutron interface dosimetry studies. The basic data of stopping power employed are the most recent. The present report covers a number of media mainly air, oxygen, nitrogen, polythene, graphite, bone and tissue, and a number of charged particles, namely protons, alphas, 9 Be, 11 B, 12 C, 13 C, 14 N and 16 O. These functions would be useful for generation of energy and range values for any of the above particles in any of the above media within +- 1% in any dosimetric calculations. (author)

  2. Range verification for eye proton therapy based on proton-induced x-ray emissions from implanted metal markers

    International Nuclear Information System (INIS)

    Rosa, Vanessa La; Royle, Gary; Gibson, Adam; Kacperek, Andrzej

    2014-01-01

    Metal fiducial markers are often implanted on the back of the eye before proton therapy to improve target localization and reduce patient setup errors. We aim to detect characteristic x-ray emissions from metal targets during proton therapy to verify the treatment range accuracy. Initially gold was chosen for its biocompatibility properties. Proton-induced x-ray emissions (PIXE) from a 15 mm diameter gold marker were detected at different penetration depths of a 59 MeV proton beam at the CATANA proton facility at INFN-LNS (Italy). The Monte Carlo code Geant4 was used to reproduce the experiment and to investigate the effect of different size markers, materials, and the response to both mono-energetic and fully modulated beams. The intensity of the emitted x-rays decreases with decreasing proton energy and thus decreases with depth. If we assume the range to be the depth at which the dose is reduced to 10% of its maximum value and we define the residual range as the distance between the marker and the range of the beam, then the minimum residual range which can be detected with 95% confidence level is the depth at which the PIXE peak is equal to 1.96 σ bkg , which is the standard variation of the background noise. With our system and experimental setup this value is 3 mm, when 20 GyE are delivered to a gold marker of 15 mm diameter. Results from silver are more promising. Even when a 5 mm diameter silver marker is placed at a depth equal to the range, the PIXE peak is 2.1 σ bkg . Although these quantitative results are dependent on the experimental setup used in this research study, they demonstrate that the real-time analysis of the PIXE emitted by fiducial metal markers can be used to derive beam range. Further analysis are needed to demonstrate the feasibility of the technique in a clinical setup. (paper)

  3. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  4. Optimization of High-Energy Implanter Beamline Pumping

    International Nuclear Information System (INIS)

    LaFontaine, Marvin; Pharand, Michel; Huang Yongzhang; Pokidov, Ilya; Ferrara, Joseph

    2006-01-01

    A high-energy implanter process chamber and its pumping configuration were designed to minimize the residual gas density in the endstation. A modified Nastran trade mark sign finite-element analysis (FEA) code was used to calculate the pressure distribution and gas flow within the process chamber. The modified FE method was readily applied to the internal geometry of the scan chamber, the corrector magnet waveguide, and the process chamber, which included the scan arm assembly, 300mm wafer, and plasma electron flood gun (PEF). Using the modified Nastran code, the gas flow and pressure distribution within the beamline geometry were calculated. The gas load consisted of H2, which is generated by photoresist (PR) outgassing from the 300mm wafer, and Xe from the plasma electron flood gun. Several pumping configurations were assessed, with each consisting of various locations and pumping capacities of vacuum pumps. The pressure distribution results for each configuration are presented, along with pumping efficiency results which are helpful in selecting the optimum pump configuration. The analysis results were compared to measured data, indicating a good correlation between the two

  5. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    International Nuclear Information System (INIS)

    Xu Gang; Wang Xiaoteng; Gan Cailing; Fang Yanqiong; Zhang Meng

    2012-01-01

    Highlights: ► We analyzed biological effects of N + implantation on dry Jatropha curcas seed. ► N + implantation greatly decreased seedling survival rate. ► At doses beyond 15 × 10 16 ion cm −2 , biological repair took place. ► CAT was essential for H 2 O 2 removal. POD mainly functioned as seed was severely hurt. ► HAsA–GSH cycle mainly contributed to the regeneration of HAsA. - Abstract: To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N + with energy of 25 keV was applied to treat the dry seed at six different doses. N + beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 × 10 16 to 15 × 10 16 ions cm −2 severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 × 10 16 ion cm −2 , biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 × 10 16 ions cm −2 may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA–GSH cycle appeared to be for regeneration of HAsA.

  6. Long range energy transfer in graphene hybrid structures

    International Nuclear Information System (INIS)

    Gonçalves, Hugo; Bernardo, César; Moura, Cacilda; Belsley, Michael; Schellenberg, Peter; Ferreira, R A S; André, P S; Stauber, Tobias

    2016-01-01

    In this work we quantify the distance dependence for the extraction of energy from excited chromophores by a single layer graphene flake over a large separation range. To this end hybrid structures were prepared, consisting of a thin (2 nm) layer of a polymer matrix doped with a well chosen strongly fluorescent organic molecule, followed by an un-doped spacer layer of well-defined thicknesses made of the same polymer material and an underlying single layer of pristine, undoped graphene. The coupling strength is assessed through the variation of the fluorescence decay kinetics as a function of distance between the graphene and the excited chromophore molecules. Non-radiative energy transfer to the graphene was observed at distances of up to 60 nm; a range much greater than typical energy transfer distances observed in molecular systems. (paper)

  7. Studies of ultra shallow n+-p junctions formed by low-energy As-implantation

    International Nuclear Information System (INIS)

    Girginoudi, D.; Georgoulas, N.; Thanailakis, A.; Polychroniadis, E.K.

    2004-01-01

    The generation and the evolution of extended defects in ultra-shallow n + -p junctions, formed by As ion implantation into silicon at low energies of 15, 10 and 5 keV and a dose of 1 x 10 15 cm -2 , and rapid thermal annealing (RTA) at temperatures of 650 deg. C ≤T ≤ 950 deg. C have been studied using transmission electron microscopy (TEM) measurements. The generated defects in the end-of-range region are dislocation loops, which grew larger and their density decreased with increasing annealing temperature. Reduction in the implantation energy causes a decrease in defect size and density as well as in dissolution temperature. The loops dissolved at 950 deg. C for 15 and 10 keV, whereas for 5 keV they dissolved at 850 deg. C. Arsenic transient enhanced diffusion (TED) studied by ToF-SIMS measurements was observed at temperatures above 650 deg. C for all implantation energies, with markedly less TED for the 5 keV, although As segregates near the surface region. The results suggest that the surface plays a key role on the formation and the dissolution of the dislocation loops and the As TED, by acting as a perfect sink of point defects. A significant degradation in electrical activation efficiency and a sharp increase in sheet resistance were observed at the low energy of 5 keV. In addition, the increase of temperature causes a slight decrease in electrical activation efficiency. Out-diffusion of As (10-25%) plays a significant role in the electrically active fraction of the dopant, due to the extreme proximity to the surface of high As concentrations. Junctions shallower than 40 nm, with 50-40% of the implanted dose electrically active and sheet resistance of 370-320 ohm/square, were obtained for the 5 keV. Finally, the TED during RTA was correctly simulated using a RTA model implemented in SSUPREM4 of the process simulator, including the dislocation loops and the dose loss

  8. Exploring metal artifact reduction using dual-energy CT with pre-metal and post-metal implant cadaver comparison: are implant specific protocols needed?

    NARCIS (Netherlands)

    Wellenberg, Ruud H. H.; Donders, Johanna C. E.; Kloen, Peter; Beenen, Ludo F. M.; Kleipool, Roeland P.; Maas, Mario; Streekstra, Geert J.

    2017-01-01

    To quantify and optimize metal artifact reduction using virtual monochromatic dual-energy CT for different metal implants compared to non-metal reference scans. Dual-energy CT scans of a pair of human cadaver limbs were acquired before and after implanting a titanium tibia plate, a stainless-steel

  9. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

    International Nuclear Information System (INIS)

    Holland, O.W.; El-Ghor, M.K.; White, C.W.

    1989-01-01

    Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

  10. Wide-Range Highly-Efficient Wireless Power Receivers for Implantable Biomedical Sensors

    KAUST Repository

    Ouda, Mahmoud

    2016-01-01

    for implantable devices or IoT nodes. A custom setup is developed to test the chip in a saline solution with electrical properties similar to those of the aqueous humor of the eye. The proposed chip, in this eye-like setup, is wirelessly charged to 1V from a 5W

  11. Interference fringes in synchrotron section topography of implanted silicon with a very large ion range

    International Nuclear Information System (INIS)

    Wieteska, K.; Dluzewska, K.; Wierzchowski, W.; Graeff, W.

    1997-01-01

    Silicon crystals implanted with 9 MeV protons to the dose of 5x10 17 cm -2 were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The locations of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose. (author)

  12. On the origin of apparent Z{sub 1}-oscillations in low-energy heavy-ion ranges

    Energy Technology Data Exchange (ETDEWEB)

    Wittmaack, Klaus, E-mail: wittmaack@helmholtz-muenchen.de

    2016-12-01

    It has been known for quite some time that projected ranges measured by Rutherford backscattering spectrometry for a variety of low-energy heavy ions (energy-to-mass ratio E/M{sub 1} less than ∼0.4 keV/u) exhibit significant or even pronounced deviations from the theoretically predicted smooth dependence on the projectile’s atomic number Z{sub 1}. Studied most thoroughly for silicon targets, the effect was attributed to ‘Z{sub 1} oscillations’ in nuclear stopping, in false analogy to the well established Z{sub 1} oscillations in electronic stopping of low-velocity light ions. In this study an attempt was made to get order into range data published by four different groups. To achieve the goal, the absolute values of the ranges from each group had to be (re-)adjusted by up to about ±10%. Adequate justification for this approach is provided. With the changes made, similarities and differences between the different sets of data became much more transparent than before. Very important is the finding that the distortions in heavy-ion ranges are not oscillatory in nature but mostly one-sided, reflecting element-specific transport of implanted atoms deeper into the solid. Exceptions are rare gas and alkali elements, known to exhibit bombardment induced transport towards the surface. Range distortions reported for Xe and Cs could be reproduced on the basis of the recently established rapid relocation model. The extent of transport into the bulk, observed with many other elements, notably noble metals and lanthanides, reflects their high mobility under ion bombardment. The complexity of the element specific transport phenomena became fully evident by also examining the limited number of data available for the apparent range straggling. Profile broadening was identified in several cases. One element (Eu) was found to exhibit profile narrowing. This observation suggests that implanted atoms may agglomerate at peak concentrations up to 2%, possibly a tool for

  13. Renewable Energy Opportunities at White Sands Missile Range, New Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Chvala, William D.; Solana, Amy E.; States, Jennifer C.; Warwick, William M.; Weimar, Mark R.; Dixon, Douglas R.

    2008-09-01

    The document provides an overview of renewable resource potential at White Sands Missile Range (WSMR) based primarily upon analysis of secondary data sources supplemented with limited on-site evaluations. The effort was funded by the U.S. Army Installation Management Command (IMCOM) as follow-on to the 2005 DoD Renewable Energy Assessment. This effort focuses on grid-connected generation of electricity from renewable energy sources and also ground source heat pumps (GSHPs) for heating and cooling buildings, as directed by IMCOM.

  14. Study in mutation of alfalfa genome DNA due to low energy N+ implantation using RAPD

    International Nuclear Information System (INIS)

    Chen Roulei; Song Daojun; Yu Zengliang; Li Yufeng; Liang Yunzhang

    2001-01-01

    After implanted by various dosage N + beams, germination rate of alfalfa seeds appears to be saddle line with dosage increasing. The authors have studied in mutation of genome DNA due to low energy N + implantation, and concluded that 30 differential DNA fragments have been amplified by 8 primers (S 41 , S 42 , S 45 , S 46 , S 50 , S 52 , S 56 , S 58 ) in 100 primers, moreover, number of differential DNA fragments between CK and treatments increases with dosage. Consequently, low energy ion implantation can cause mutation of alfalfa genome DNA. The more dosage it is, the more mutation alfalfa will be

  15. Energy-range relation and mean energy variation in therapeutic particle beams

    International Nuclear Information System (INIS)

    Kempe, Johanna; Brahme, Anders

    2008-01-01

    Analytical expressions for the mean energy and range of therapeutic light ion beams and low- and high-energy electrons have been derived, based on the energy dependence of their respective stopping powers. The new mean energy and range relations are power-law expressions relevant for light ion radiation therapy, and are based on measured practical ranges or known tabulated stopping powers and ranges for the relevant incident particle energies. A practical extrapolated range, R p , for light ions was defined, similar to that of electrons, which is very closely related to the extrapolated range of the primary ions. A universal energy-range relation for light ions and electrons that is valid for all material mixtures and compounds has been developed. The new relation can be expressed in terms of the range for protons and alpha particles, and is found to agree closely with experimental data in low atomic number media and when the difference in the mean ionization energy is low. The variation of the mean energy with depth and the new energy-range relation are useful for accurate stopping power and mass scattering power calculations, as well as for general particle transport and dosimetry applications

  16. Carbon and energy balances for a range of biofuels options

    Energy Technology Data Exchange (ETDEWEB)

    Elsayed, M.A.; Matthews, R.; Mortimer, N.D.

    2003-03-01

    This is the final report of a project to produce a set of baseline energy and carbon balances for a range of electricity, heat and transport fuel production systems based on biomass feedstocks. A list of 18 important biofuel technologies in the UK was selected for study of their energy and carbon balances in a consistent approach. Existing studies on these biofuel options were reviewed and their main features identified in terms of energy input, greenhouse gas emissions (carbon dioxide, methane, nitrous oxide and total), transparency and relevance. Flow charts were produced to represent the key stages of the production of biomass and its conversion to biofuels. Outputs from the study included primary energy input per delivered energy output, carbon dioxide outputs per delivered energy output, methane output per delivered energy output, nitrous oxide output per delivered energy output and total greenhouse gas requirements. The net calorific value of the biofuel is given where relevant. Biofuels studied included: biodiesel from oilseed rape and recycled vegetable oil; combined heat and power (CHP) by combustion of wood chip from forestry residues; CHP by gasification of wood chip from short rotation coppice; electricity from the combustion of miscanthus, straw, wood chip from forestry residues and wood chip from short rotation coppice; electricity from gasification of wood chip from forestry residues and wood chip from short rotation coppice; electricity by pyrolysis of wood chip from forestry residues and wood chip from short rotation coppice; ethanol from lignocellulosics, sugar beet and wheat; heat (small scale) from combustion of wood chip from forestry residues and wood chip from short rotation coppice; and rapeseed oil from oilseed rape.

  17. Modification of high density polyethylene by gold implantation using different ion energies

    Energy Technology Data Exchange (ETDEWEB)

    Nenadović, M.; Potočnik, J. [INS Vinca, Laboratory of Atomic Physics, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia); Mitrić, M. [INS Vinca, Condensed Matter Physics Laboratory, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia); Štrbac, S. [ICTM Institute of Electrochemistry, University of Belgrade, Njegoseva 12, 11001 Belgrade (Serbia); Rakočević, Z., E-mail: zlatkora@vinca.rs [INS Vinca, Laboratory of Atomic Physics, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia)

    2013-11-01

    High density polyethylene (HDPE) samples were modified by Au{sup +} ion implantation at a dose of 5 × 10{sup 15} ions cm{sup −2}, using energies of 50, 100, 150 and 200 keV. The existence of implanted gold in the near-surface region of HDPE samples was confirmed by X-ray diffraction analysis. Surface roughness and Power Spectral Density analyses based on Atomic Force Microscopy (AFM) images of the surface topography revealed that the mechanism of HDPE modification during gold ion implantation depended on the energy of gold ions. Histograms obtained from phase AFM images indicated a qualitative change in the chemical composition of the surface during implantation with gold ions with different energies. Depth profiles obtained experimentally from cross-sectional Force Modulation Microscopy images and ones obtained from a theoretical simulation are in agreement for gold ions energies lower than 100 keV. The deviation that was observed for higher energies of the gold ions is explained by carbon precipitation in the near surface region of the HDPE, which prevented the penetration of gold ions further into the depth of the sample. - Highlights: • HDPE was implanted by Au{sup +} ions using energies of 50, 100, 150 and 200 keV. • Surface composition was analyzed from phase AFM images. • FMM depth profiles are in agreement with theoretical ones for energies up to 100 keV. • A deviation is observed for higher gold ion energies.

  18. Modification of high density polyethylene by gold implantation using different ion energies

    International Nuclear Information System (INIS)

    Nenadović, M.; Potočnik, J.; Mitrić, M.; Štrbac, S.; Rakočević, Z.

    2013-01-01

    High density polyethylene (HDPE) samples were modified by Au + ion implantation at a dose of 5 × 10 15 ions cm −2 , using energies of 50, 100, 150 and 200 keV. The existence of implanted gold in the near-surface region of HDPE samples was confirmed by X-ray diffraction analysis. Surface roughness and Power Spectral Density analyses based on Atomic Force Microscopy (AFM) images of the surface topography revealed that the mechanism of HDPE modification during gold ion implantation depended on the energy of gold ions. Histograms obtained from phase AFM images indicated a qualitative change in the chemical composition of the surface during implantation with gold ions with different energies. Depth profiles obtained experimentally from cross-sectional Force Modulation Microscopy images and ones obtained from a theoretical simulation are in agreement for gold ions energies lower than 100 keV. The deviation that was observed for higher energies of the gold ions is explained by carbon precipitation in the near surface region of the HDPE, which prevented the penetration of gold ions further into the depth of the sample. - Highlights: • HDPE was implanted by Au + ions using energies of 50, 100, 150 and 200 keV. • Surface composition was analyzed from phase AFM images. • FMM depth profiles are in agreement with theoretical ones for energies up to 100 keV. • A deviation is observed for higher gold ion energies

  19. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    International Nuclear Information System (INIS)

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  20. Feasibility of proton-activated implantable markers for proton range verification using PET

    Science.gov (United States)

    Cho, Jongmin; Ibbott, Geoffrey; Gillin, Michael; Gonzalez-Lepera, Carlos; Titt, Uwe; Paganetti, Harald; Kerr, Matthew; Mawlawi, Osama

    2013-11-01

    Proton beam range verification using positron emission tomography (PET) currently relies on proton activation of tissue, the products of which decay with a short half-life and necessitate an on-site PET scanner. Tissue activation is, however, negligible near the distal dose fall-off region of the proton beam range due to their high interaction energy thresholds. Therefore Monte Carlo simulation is often supplemented for comparison with measurement; however, this also may be associated with systematic and statistical uncertainties. Therefore, we sought to test the feasibility of using long-lived proton-activated external materials that are inserted or infused into the target volume for more accurate proton beam range verification that could be performed at an off-site PET scanner. We irradiated samples of ≥98% 18O-enriched water, natural Cu foils, and >97% 68Zn-enriched foils as candidate materials, along with samples of tissue-equivalent materials including 16O water, heptane (C7H16), and polycarbonate (C16H14O3)n, at four depths (ranging from 100% to 3% of center of modulation (COM) dose) along the distal fall-off of a modulated 160 MeV proton beam. Samples were irradiated either directly or after being embedded in Plastic Water® or balsa wood. We then measured the activity of the samples using PET imaging for 20 or 30 min after various delay times. Measured activities of candidate materials were up to 100 times greater than those of the tissue-equivalent materials at the four distal dose fall-off depths. The differences between candidate materials and tissue-equivalent materials became more apparent after longer delays between irradiation and PET imaging, due to the longer half-lives of the candidate materials. Furthermore, the activation of the candidate materials closely mimicked the distal dose fall-off with offsets of 1 to 2 mm. Also, signals from the foils were clearly visible compared to the background from the activated Plastic Water® and balsa wood

  1. Ion range estimation by using dual energy computed tomography

    Energy Technology Data Exchange (ETDEWEB)

    Huenemohr, Nora; Greilich, Steffen [German Cancer Research Center (DKFZ), Heidelberg (Germany). Medical Physics in Radiation Oncology; Krauss, Bernhard [Siemens AG, Forchheim (Germany). Imaging and Therapy; Dinkel, Julien [German Cancer Research Center (DKFZ), Heidelberg (Germany). Radiology; Massachusetts General Hospital, Boston, MA (United States). Radiology; Gillmann, Clarissa [German Cancer Research Center (DKFZ), Heidelberg (Germany). Medical Physics in Radiation Oncology; University Hospital Heidelberg (Germany). Radiation Oncology; Ackermann, Benjamin [Heidelberg Ion-Beam Therapy Center (HIT), Heidelberg (Germany); Jaekel, Oliver [German Cancer Research Center (DKFZ), Heidelberg (Germany). Medical Physics in Radiation Oncology; Heidelberg Ion-Beam Therapy Center (HIT), Heidelberg (Germany); University Hospital Heidelberg (Germany). Radiation Oncology

    2013-07-01

    Inaccurate conversion of CT data to water-equivalent path length (WEPL) is one of the most important uncertainty sources in ion treatment planning. Dual energy CT (DECT) imaging might help to reduce CT number ambiguities with the additional information. In our study we scanned a series of materials (tissue substitutes, aluminum, PMMA, and other polymers) in the dual source scanner (Siemens Somatom Definition Flash). Based on the 80 kVp/140Sn kVp dual energy images, the electron densities Q{sub e} and effective atomic numbers Z{sub eff} were calculated. We introduced a new lookup table that translates the Q{sub e} to the WEPL. The WEPL residuals from the calibration were significantly reduced for the investigated tissue surrogates compared to the empirical Hounsfield-look-up table (single energy CT imaging) from (-1.0 {+-} 1.8)% to (0.1 {+-} 0.7)% and for non-tissue equivalent PMMA from -7.8% to -1.0%. To assess the benefit of the new DECT calibration, we conducted a treatment planning study for three different idealized cases based on tissue surrogates and PMMA. The DECT calibration yielded a significantly higher target coverage in tissue surrogates and phantom material (i.e. PMMA cylinder, mean target coverage improved from 62% to 98%). To verify the DECT calibration for real tissue, ion ranges through a frozen pig head were measured and compared to predictions calculated by the standard single energy CT calibration and the novel DECT calibration. By using this method, an improvement of ion range estimation from -2.1% water-equivalent thickness deviation (single energy CT) to 0.3% (DECT) was achieved. If one excludes raypaths located on the edge of the sample accompanied with high uncertainties, no significant difference could be observed. (orig.)

  2. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    Science.gov (United States)

    Xu, Gang; Wang, Xiao-teng; Gan, Cai-ling; Fang, Yan-qiong; Zhang, Meng

    2012-09-01

    To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N+ with energy of 25 keV was applied to treat the dry seed at six different doses. N+ beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 × 1016 to 15 × 1016 ions cm-2 severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 × 1016 ion cm-2, biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 × 1016 ions cm-2 may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA-GSH cycle appeared to be for regeneration of HAsA.

  3. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Isoya, J [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H; Morita, Y; Ohshima, T

    1997-03-01

    Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

  4. Surface potential measurement of insulators in negative-ion implantation by secondary electron energy-peak shift

    International Nuclear Information System (INIS)

    Nagumo, Shoji; Toyota, Yoshitaka; Tsuji, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

    1993-01-01

    Negative-ion implantation is expected to realize charge-up free implantation. In this article, about a way to specify surface potential of negative-ion implanted insulator by secondary-electron-energy distribution, its principle and preliminary experimental results are described. By a measuring system with retarding field type energy analyzer, energy distribution of secondary electron from insulator of Fused Quartz in negative-carbon-ion implantation was measured. As a result the peak-shift of its energy distribution resulted according with the surface potential of insulator. It was found that surface potential of insulator is negatively charged by only several volts. Thus, negative-ion implanted insulator reduced its surface charge-up potential (without any electron supply). Therefore negative-ion implantation is considered to be much more effective method than conventional positive-ion implantation. (author)

  5. A simple method to produce quasi-simultaneous multiple energy helium implantation

    International Nuclear Information System (INIS)

    Paszti, F.; Fried, M.; Manuaba, A.; Mezey, G.; Kotai, E.; Lohner, T.

    1982-11-01

    If a monoenergetic ion beam is bombarding a target through an absorber foil tilted continuously (i.e. its effective thickness changing continuously), the depth distribution of the implanted ions in the sample depends on the way the absorber is moving. The present paper describes a way of absorber tilting for obtaining a uniform depth distribution and its experimental verification in the case of MeV energy helium ions implanted into aluminium target. (author)

  6. Relation between total shock energy and mortality in patients with implantable cardioverter-defibrillator.

    Science.gov (United States)

    Tenma, Taro; Yokoshiki, Hisashi; Mitsuyama, Hirofumi; Watanabe, Masaya; Mizukami, Kazuya; Kamada, Rui; Takahashi, Masayuki; Sasaki, Ryo; Maeno, Motoki; Okamoto, Kaori; Chiba, Yuki; Anzai, Toshihisa

    2018-05-15

    Implantable Cardioverter-Defibrillator (ICD) shocks have been associated with mortality. However, no study has examined the relation between total shock energy and mortality. The aim of this study is to assess the association of total shock energy with mortality, and to determine the patients who are at risk of this association. Data from 316 consecutive patients who underwent initial ICD implantation in our hospital between 2000 and 2011 were retrospectively studied. We collected shock energy for 3 years from the ICD implantation, and determined the relation of shock energy on mortality after adjusting confounding factors. Eighty-seven ICD recipients experienced shock(s) within 3 years from ICD implantation and 43 patients had died during the follow-up. The amount of shock energy was significantly associated with all-cause death [adjusted hazard ratio (HR) 1.26 (per 100 joule increase), p energy accumulation (≥182 joule) was lower (p energy accumulation (energy accumulation and all-cause death was remarkable in the patients with low left ventricular ejection fraction (LVEF ≤40%) or atrial fibrillation (AF). Increase of shock energy was related to mortality in ICD recipients. This relation was evident in patients with low LVEF or AF. Copyright © 2018 Elsevier B.V. All rights reserved.

  7. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

    International Nuclear Information System (INIS)

    Camillo-Castillo, R.A.; Law, M.E.; Jones, K.S.

    2004-01-01

    As the industry continues to aggressively scale CMOS technology, the shift to lower energy ion implantation becomes essential. The consequent shallower amorphous layers result in dopant profiles that are in closer proximity to the end of range (EOR) damage and therefore a better understanding of the interaction between the dopant atoms and the EOR is required. A study is conducted on the influence of dopant profiles on the behavior of the EOR defects. Czochralski-grown silicon wafers are preamorphized with 1 x 10 15 cm -2 , 10 keV Ge + ions and subsequently implanted with 1 x 10 15 cm -2 , 1 keV B + ions. A sequence of rapid thermal and furnace anneals are performed at 750 deg. C under a nitrogen ambient for periods of 1 s up to 6 h. Plan view transmission electron microscopy (PTEM) reveals a significant difference in the defect evolution for samples with and without boron, suggesting that the boron influences the evolution of the EOR defects. The extended defects observed for samples which contain boron appear as dot-like defects which are unstable and dissolve after very short anneal times. The defect evolution however, in samples without boron follows an Oswald ripening behavior and form {3 1 1}-type defects and dislocation loops. Hall effect measurements denote a high initial activation and subsequent deactivation of the dopant atoms which is characteristic of the formation of boron interstitial clusters. Diffusion analyses via secondary ion mass spectroscopy (SIMS) support this theory

  8. Advanced Range Safety System for High Energy Vehicles

    Science.gov (United States)

    Claxton, Jeffrey S.; Linton, Donald F.

    2002-01-01

    The advanced range safety system project is a collaboration between the National Aeronautics and Space Administration and the United States Air Force to develop systems that would reduce costs and schedule for safety approval for new classes of unmanned high-energy vehicles. The mission-planning feature for this system would yield flight profiles that satisfy the mission requirements for the user while providing an increased quality of risk assessment, enhancing public safety. By improving the speed and accuracy of predicting risks to the public, mission planners would be able to expand flight envelopes significantly. Once in place, this system is expected to offer the flexibility of handling real-time risk management for the high-energy capabilities of hypersonic vehicles including autonomous return-from-orbit vehicles and extended flight profiles over land. Users of this system would include mission planners of Space Launch Initiative vehicles, space planes, and other high-energy vehicles. The real-time features of the system could make extended flight of a malfunctioning vehicle possible, in lieu of an immediate terminate decision. With this improved capability, the user would have more time for anomaly resolution and potential recovery of a malfunctioning vehicle.

  9. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  10. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    Energy Technology Data Exchange (ETDEWEB)

    Xu Gang, E-mail: xg335300@yahoo.com.cn [Center for Research and Development of Fine Chemicals, Guizhou University, Guiyang 550025 (China); Institute of Entomology, Guizhou University, Guiyang 550025 (China); Wang Xiaoteng [Department of Agricultural Resources and Environment, College of Agricultural, Guizhou University, Guiyang 550025 (China); Gan Cailing; Fang Yanqiong; Zhang Meng [College of Life Sciences, Guizhou University, Guiyang 550025 (China)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer We analyzed biological effects of N{sup +} implantation on dry Jatropha curcas seed. Black-Right-Pointing-Pointer N{sup +} implantation greatly decreased seedling survival rate. Black-Right-Pointing-Pointer At doses beyond 15 Multiplication-Sign 10{sup 16} ion cm{sup -2}, biological repair took place. Black-Right-Pointing-Pointer CAT was essential for H{sub 2}O{sub 2} removal. POD mainly functioned as seed was severely hurt. Black-Right-Pointing-Pointer HAsA-GSH cycle mainly contributed to the regeneration of HAsA. - Abstract: To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N{sup +} with energy of 25 keV was applied to treat the dry seed at six different doses. N{sup +} beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 Multiplication-Sign 10{sup 16} to 15 Multiplication-Sign 10{sup 16} ions cm{sup -2} severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 Multiplication-Sign 10{sup 16} ion cm{sup -2}, biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 Multiplication-Sign 10{sup 16} ions cm{sup -2} may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA-GSH cycle appeared to be for regeneration of HAsA.

  11. Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

    Science.gov (United States)

    Soti, G.; Wauters, F.; Breitenfeldt, M.; Finlay, P.; Kraev, I. S.; Knecht, A.; Porobić, T.; Zákoucký, D.; Severijns, N.

    2013-11-01

    Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to β particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.

  12. Studies on mass deposition effect and energy effect of biomolecules implanted by N+ ion beam

    International Nuclear Information System (INIS)

    Shao Chunlin; Yu Zengliang

    1994-05-01

    By analyzing some spectrum of tyrosine sample implanted by N + ion beam, it is deduced that the implantation N + could react with the tyrosine molecule and substitute =C 5 H- group of benzene ring to produce a N-heterocyclic compound. This compound would notably affect the residual activity of the sample. Moreover, the percentage of the product molecules to the damaged tyrosine molecules is larger than the reciprocal of the proportion of their extinction coefficients. On the other hand, by comparing the release of inorganic phosphate, it is found that the radiation sensibility for four basic nucleotides is 5'-dTMP>5'-CMP>5'-GMP>5'-AMP. to implanted nucleotides, alkali treatment and heat treatment could increase the amount of inorganic phosphate. The amount of inorganic phosphate in the nucleotide samples directly implanted by ions beam is about 60% of the total amount of inorganic phosphate that could be released from the implanted samples heated at 90 degree C for 1.75 hours. Alkali treatment could damage and split the free bases released from the implanted nucleotides, but heat treatment might repair those damaged bases. Above results prove that ions implantation to biomolecules has the mass deposition effects and energy effects

  13. Value of monoenergetic dual-energy CT (DECT) for artefact reduction from metallic orthopedic implants in post-mortem studies.

    Science.gov (United States)

    Filograna, Laura; Magarelli, Nicola; Leone, Antonio; Guggenberger, Roman; Winklhofer, Sebastian; Thali, Michael John; Bonomo, Lorenzo

    2015-09-01

    The aim of this ex vivo study was to assess the performance of monoenergetic dual-energy CT (DECT) reconstructions to reduce metal artefacts in bodies with orthopedic devices in comparison with standard single-energy CT (SECT) examinations in forensic imaging. Forensic and clinical impacts of this study are also discussed. Thirty metallic implants in 20 consecutive cadavers with metallic implants underwent both SECT and DECT with a clinically suitable scanning protocol. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. Image quality of the seven monoenergetic images and of the corresponding SECT image was assessed qualitatively and quantitatively by visual rating and measurements of attenuation changes induced by streak artefact. Qualitative and quantitative analyses showed statistically significant differences between monoenergetic DECT extrapolated images and SECT, with improvements in diagnostic assessment in monoenergetic DECT at higher monoenergies. The mean value of OPTkeV was 137.6 ± 4.9 with a range of 130 to 148 keV. This study demonstrates that monoenergetic DECT images extrapolated at high energy levels significantly reduce metallic artefacts from orthopedic implants and improve image quality compared to SECT examination in forensic imaging.

  14. Value of monoenergetic dual-energy CT (DECT) for artefact reduction from metallic orthopedic implants in post-mortem studies

    International Nuclear Information System (INIS)

    Filograna, Laura; Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo; Guggenberger, Roman; Winklhofer, Sebastian; Thali, Michael John

    2015-01-01

    The aim of this ex vivo study was to assess the performance of monoenergetic dual-energy CT (DECT) reconstructions to reduce metal artefacts in bodies with orthopedic devices in comparison with standard single-energy CT (SECT) examinations in forensic imaging. Forensic and clinical impacts of this study are also discussed. Thirty metallic implants in 20 consecutive cadavers with metallic implants underwent both SECT and DECT with a clinically suitable scanning protocol. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. Image quality of the seven monoenergetic images and of the corresponding SECT image was assessed qualitatively and quantitatively by visual rating and measurements of attenuation changes induced by streak artefact. Qualitative and quantitative analyses showed statistically significant differences between monoenergetic DECT extrapolated images and SECT, with improvements in diagnostic assessment in monoenergetic DECT at higher monoenergies. The mean value of OPTkeV was 137.6 ± 4.9 with a range of 130 to 148 keV. This study demonstrates that monoenergetic DECT images extrapolated at high energy levels significantly reduce metallic artefacts from orthopedic implants and improve image quality compared to SECT examination in forensic imaging. (orig.)

  15. Value of monoenergetic dual-energy CT (DECT) for artefact reduction from metallic orthopedic implants in post-mortem studies

    Energy Technology Data Exchange (ETDEWEB)

    Filograna, Laura [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland); Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Rome (Italy); Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Rome (Italy); Guggenberger, Roman; Winklhofer, Sebastian [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Thali, Michael John [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland)

    2015-09-15

    The aim of this ex vivo study was to assess the performance of monoenergetic dual-energy CT (DECT) reconstructions to reduce metal artefacts in bodies with orthopedic devices in comparison with standard single-energy CT (SECT) examinations in forensic imaging. Forensic and clinical impacts of this study are also discussed. Thirty metallic implants in 20 consecutive cadavers with metallic implants underwent both SECT and DECT with a clinically suitable scanning protocol. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. Image quality of the seven monoenergetic images and of the corresponding SECT image was assessed qualitatively and quantitatively by visual rating and measurements of attenuation changes induced by streak artefact. Qualitative and quantitative analyses showed statistically significant differences between monoenergetic DECT extrapolated images and SECT, with improvements in diagnostic assessment in monoenergetic DECT at higher monoenergies. The mean value of OPTkeV was 137.6 ± 4.9 with a range of 130 to 148 keV. This study demonstrates that monoenergetic DECT images extrapolated at high energy levels significantly reduce metallic artefacts from orthopedic implants and improve image quality compared to SECT examination in forensic imaging. (orig.)

  16. Quantum conductance of carbon nanotubes in a wide energy range

    International Nuclear Information System (INIS)

    Zhang, Yong

    2015-01-01

    The differential conductance of armchair and zigzag carbon nanotubes (CNTs) in a wide energy range has been numerically calculated by using the tight-binding model and the Green’s function method. The effects of the contact coupling between CNTs and electrodes on conductance have been explored. The ballistic conductance is proportional to the band numbers and has a ladder-like feature. As the increase of the contact coupling, the conductance oscillations appear and they are robust against the coupling. More importantly, on the first step of the conductance ladder, the armchair CNTs have two quasi-periodic conductance oscillations, i.e. a rapid conductance oscillation superimposed on a slow fluctuation background; while the zigzag CNTs have only one conductance oscillation. But on the second conductance step, all CNTs have two quasi-periodic conductance oscillations. The physical origin of the conductance oscillations has been revealed

  17. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  18. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

    1986-01-01

    The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

  19. Passively-switched energy harvester for increased operational range

    International Nuclear Information System (INIS)

    Liu, Tian; Livermore, Carol; Pierre, Ryan St

    2014-01-01

    This paper presents modeling and experimental validation of a new type of vibrational energy harvester that passively switches between two dynamical modes of operation to expand the range of driving frequencies and accelerations over which the harvester effectively extracts power. In both modes, a driving beam with a low resonant frequency couples into ambient vibrations and transfers their energy to a generating beam that has a higher resonant frequency. The generating beam converts the mechanical power into electrical power. In coupled-motion mode, the driving beam bounces off the generating beam. In plucked mode, the driving beam deflects the generating beam until the driving beam passes from above the generating beam to below it or vice versa. Analytical system models are implemented numerically in the time domain for driving frequencies of 3 Hz to 27 Hz and accelerations from 0.1 g to 2.6 g, and both system dynamics and output power are predicted. A corresponding switched-dynamics harvester is tested experimentally, and its voltage, power, and dynamics are recorded. In both models and experiments, coupled-motion harvesting is observed at lower accelerations, whereas plucked harvesting and/or mixed mode harvesting are observed at higher accelerations. As expected, plucked harvesting outputs greater power than coupled-motion harvesting in both simulations and experiments. The predicted (1.8 mW) and measured (1.56 mW) maximum average power levels are similar under measured conditions at 0.5 g. When the system switches to dynamics that are characteristic of higher frequencies, the difference between predicted and measured power levels is more pronounced due to non-ideal mechanical interaction between the beams’ tips. Despite the beams’ non-ideal interactions, switched-dynamics operation increases the harvester’s operating range. (paper)

  20. Application of long range energy alternative planning (LEAP) model for Thailand energy outlook 2030 : reference case

    International Nuclear Information System (INIS)

    Charusiri, W.; Eua-arporn, B.; Ubonwat, J.

    2008-01-01

    In 2004, the total energy consumption in Thailand increased 8.8 per cent, from 47,806 to 60,260 ktoe. Long-range Energy Alternatives Planning (LEAP) is an accounting tool that simulates future energy scenarios. According to a Business As Usual (BAU) case, the overall energy demand in Thailand is estimated to increase from 61,262 to 254,200 ktoe between 2004 and 2030. Commercial energy consumption, which comprises petroleum products, natural gas, coal and its products, and electricity, increased by 9.0 per cent in Thailand in 2004, and new and renewable energy increased by 7.8 per cent. Nearly 60 per cent of the total commercial energy supply in Thailand was imported and increased for a fifth year in a row. The changes in energy consumption can be attributed to population growth and increase in economic activity and development. 10 refs., 5 tabs., 14 figs

  1. Modifying the conductivity of polypyrrole through low-energy lead ion implantation

    International Nuclear Information System (INIS)

    Booth, Marsilea Adela; Leveneur, Jérôme; Costa, Alexsandro Santos; Kennedy, John; Harbison, SallyAnn; Travas-Sejdic, Jadranka

    2012-01-01

    Interest lies in the creation of novel nanocomposite materials obtained through mixing, impregnation or incorporation techniques. One such technique is ion implantation which possesses the potential for retaining properties from the base material and implanted material as well as any effects observed from combining the two. To this end low-energy (15 keV) implantation of lead ions of various fluences was performed in conducting polypyrrole films. The presence of lead-rich particles was evidenced through transmission electron microscopy. An interesting trend was observed between fluence and conductivity. Of the fluences tested, the optimum fluences of lead ion implantation in polypyrrole films for enhanced conductivity are 5 × 10 14 at. cm −2 and 2 × 10 15 at. cm −2 . The conductivity and stability appear to result from a combination of effects: polymer degradation arising from ion beam damage, an increase in charge-carriers (dications) present after implantation and precipitation of Pb-rich nanoparticles. Monitoring conductivity over time showed increased retention of conductivity levels after lead implantation. Improvements in stability for polypyrrole open avenues for application and bring polypyrrole one step closer to practical use. A mechanism is suggested for this advantageous retained conductivity. -- Highlights: ► Implanted and characterized polypyrrole films with Pb ions at different fluences. ► Samples indicate high conductivity when implanted with particular fluences. ► Increase in charge carriers and precipitation of conductive Pb-rich phase. ► Conductivity stability is higher for some implanted fluences than for pristine polypyrrole.

  2. Multi-energy ion implantation from high-intensity laser

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, Mariapompea; Torrisi, L.; Ullschmied, Jiří; Dudžák, Roman

    2016-01-01

    Roč. 61, č. 2 (2016), s. 109-113 ISSN 0029-5922. [PLASMA 2015 : International Conference on Research and Applications of Plasmas. Warsaw, 07.09.2015-11.09.2015] R&D Projects: GA MŠk(CZ) LM2011019; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389021 ; RVO:61389005 Keywords : high-intensity laser * implantation * material modification Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BL - Plasma and Gas Discharge Physics (UFP-V) Impact factor: 0.760, year: 2016

  3. The role of the substrate in the high energy boron implantation damage recovering

    International Nuclear Information System (INIS)

    Mica, I.; Di Piazza, L.; Laurin, L.; Mariani, M.; Mauri, A.G.; Polignano, M.L.; Ricci, E.; Sammiceli, F.; Spoldi, G.

    2009-01-01

    In this work the role of the Si substrate in the high energy boron implantation damage recovering is studied. The boron implants were carried out in Czochralski grown (1 0 0) polished Si substrates as well as in epitaxial Si layers grown on (1 0 0) Si by chemical vapor deposition. The boron implantation dose was 2 x 10 14 cm -2 and the implantation energy was 600 keV. The recovery annealing was a furnace annealing at 1000 deg. C for 40 min. The defects formed by high energy boron implantation have been observed with transmission electron microscopy (TEM). In order to increase the statistics some junctions were formed on the buried p-well and electrically characterized. For the epitaxial wafers it was found that the number and the size of the dislocations change according to the doping of the substrate. For the Czochralski wafers it was found that the morphology and the size of the dislocations change according to the presence of the wafer pre-annealing (whether conventional furnace annealing or Magic Denuded Zone process).

  4. Effects of energy variations of ions influencing a target on implantation

    International Nuclear Information System (INIS)

    Astakhov, V.P.; Rubtsov, V.A.; Aranovich, R.M.; Pavlov, P.V.

    1981-01-01

    In cases of phosphorus and boron ion implantation into silicon the dependence of electrophysical properties of ion-doped layers and target material near the layer boundaries on energy variation conditions of influencing ions is observed. A physical model explaining the dependence is proposed. It is found that for the target, being at room temperature, after successive annealing the qualitative characteristics of conditions (i.e. energy increase and decrease) on implantation of phosphorus ions into p-silicon and boron ions into n-silicon, as well as the value of energy stages, define rhosub(l) ion-doped layer resistivity and tausub(mc) nonequilibrium minority carrier lifetime in the base of p-n transitions. The essence of the effects observed is that for equal sets of Esub(i) ion energy values and PHIsub(i) corresponding phases at maximum energy used exceeding 30 keV, successive energy increase during implantation, when E 1 2 1 mode), leads to smaller rhosub(e) values and greater tausub(mc) than in case of successive energy decrease, when E 1 >E 2 >...E(E 2 mode) for any fixed annealing temperature. In cases when the maximum energy does not exceed 30 KeV, the E 1 and E 2 modes lead to analogous rhosub(e) and tausub(mc) values. The E 2 mode leads to enrichment of the ion-implanted layer with associations and complexes on the basis of interstitial atoms in comparison with the E 1 mode. The associations and complexes on thermal treatment are reformed into the higher-temperature interstitial complexes increasing rhosub(e) and decreasing tausub(mc). Supposition about the effect of these complexes and processes of structural transformations on annealing, hampering-improvement of structural properties of the ion-implanted layer and a crystal region bordered on it [ru

  5. Development of Linear Mode Detection for Top-down Ion Implantation of Low Energy Sb Donors

    Science.gov (United States)

    Pacheco, Jose; Singh, Meenakshi; Bielejec, Edward; Lilly, Michael; Carroll, Malcolm

    2015-03-01

    Fabrication of donor spin qubits for quantum computing applications requires deterministic control over the number of implanted donors and the spatial accuracy to within which these can be placed. We present an ion implantation and detection technique that allows us to deterministically implant a single Sb ion (donor) with a resulting volumetric distribution of performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  6. Current State and Future Perspectives of Energy Sources for Totally Implantable Cardiac Devices.

    Science.gov (United States)

    Bleszynski, Peter A; Luc, Jessica G Y; Schade, Peter; PhilLips, Steven J; Tchantchaleishvili, Vakhtang

    There is a large population of patients with end-stage congestive heart failure who cannot be treated by means of conventional cardiac surgery, cardiac transplantation, or chronic catecholamine infusions. Implantable cardiac devices, many designated as destination therapy, have revolutionized patient care and outcomes, although infection and complications related to external power sources or routine battery exchange remain a substantial risk. Complications from repeat battery replacement, power failure, and infections ultimately endanger the original objectives of implantable biomedical device therapy - eliminating the intended patient autonomy, affecting patient quality of life and survival. We sought to review the limitations of current cardiac biomedical device energy sources and discuss the current state and trends of future potential energy sources in pursuit of a lifelong fully implantable biomedical device.

  7. Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

    Energy Technology Data Exchange (ETDEWEB)

    Sangwijit, K. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Bang Khen, Chiang Mai 50290 (Thailand); Pitakrattananukool, S. [School of Science, University of Phayao, Muang, Phayao 56000 (Thailand); Anuntalabhochai, S. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand)

    2015-12-15

    Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 10{sup 12} to 1 × 10{sup 17} ions/cm{sup 2} treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

  8. Visual performance after bilateral implantation of 2 new presbyopia-correcting intraocular lenses: Trifocal versus extended range of vision.

    Science.gov (United States)

    Monaco, Gaspare; Gari, Mariangela; Di Censo, Fabio; Poscia, Andrea; Ruggi, Giada; Scialdone, Antonio

    2017-06-01

    To compare the visual outcomes and quality of vision of 2 new diffractive multifocal intraocular lenses (IOLs) with those of a monofocal IOL. Fatebenefratelli e Oftalmico Hospital, Milan, Italy. Prospective case series. Patients had bilateral cataract surgery with implantation of a trifocal IOL (Panoptix), an extended-range-of-vision IOL (Symfony), or a monofocal IOL (SN60WF). Postoperative examinations included assessing distance, intermediate, and near visual acuity; binocular defocus; intraocular and total aberrations; point-spread function (PSF); modulation transfer function (MTF); retinal straylight; and quality-of-vision (QoV) and spectacle-dependence questionnaires. Seventy-six patients (152 eyes) were assessed for study eligibility. Twenty patients (40 eyes) in each arm of the study (60 patients, 120 eyes) completed the outcome assessment. At the 4-month follow-up, the trifocal group had significantly better near visual acuity than the extended-range-of-vision group (P = .005). The defocus curve showed the trifocal IOL had better intermediate/near performance than the extended-range-of-vision IOL and both multifocal IOLs performed better than the monofocal IOL. Intragroup comparison of the total higher-order aberrations, PSF, MTF, and retinal straylight were not statistically different. The QoV questionnaire results showed no differences in dysphotopsia between the multifocal IOL groups; however, the results were significantly higher than in the monofocal IOL group. Both multifocal IOLs seemed to be good options for patients with intermediate-vision requirements, whereas the trifocal IOL might be better for patients with near-vision requirements. The significant perception of visual side effects indicates that patients still must be counseled about these effects before a multifocal IOL is implanted. Copyright © 2017 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

  9. Characterization of junctions produced by medium-energy ion implantation in silicon; Caracterisation de jonctions obtenues par implantation d'ions de moyenne energie dans le silicium

    Energy Technology Data Exchange (ETDEWEB)

    Monfret, A [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1970-07-01

    Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [French] On examine les caracteristiques de diodes obtenues par implantation d'ions bore et phosphore de 20 keV dans le silicium. On met en evidence le comportement particulier de ces diodes et on presente certaines correlations avec la technologie. L'expose comprend trois parties: - la premiere partie est consacree au calcul du profil de dopage en mode canalise ou non. - Dans la deuxieme partie, on decrit l'appareillage et les conditions experimentales d'implantation. - Dans la troisieme partie, on presente les resultats experimentaux. On propose un modele schematique pour expliquer le comportement des tenues en tension des diodes. L'etude des courants de fuite en fonction de la preparation des echantillons et des traitements thermiques permet de determiner des conditions optimales d'elaboration. Au cours de cette etude on met en evidence l'influence de deux stades de recuit: le premier a 150 deg. C pour les implantations de

  10. An accurate energy-range relationship for high-energy electron beams in arbitrary materials

    International Nuclear Information System (INIS)

    Sorcini, B.B.; Brahme, A.

    1994-01-01

    A general analytical energy-range relationship has been derived to relate the practical range, R p to the most probable energy, E p , of incident electron beams in the range 1 to 50 MeV and above, for absorbers of any atomic number. In the present study only Monte Carlo data determined with the new ITS.3 code have been employed. The standard deviations of the mean deviation from the Monte Carlo data at any energy are about 0.10, 0.12, 0.04, 0.11, 0.04, 0.03, 0.02 mm for Be, C, H 2 O, Al, Cu, Ag and U, respectively, and the relative standard deviation of the mean is about 0.5% for all materials. The fitting program gives some priority to water-equivalent materials, which explains the low standard deviation for water. A small error in the fall-off slope can give a different value for R p . We describe a new method which reduces the uncertainty in the R p determination, by fitting an odd function to the descending portion of the depth-dose curve in order to accurately determine the tangent at the inflection point, and thereby the practical range. An approximate inverse relation is given expressing the most probable energy of an electron beam as a function of the practical range. The resultant relative standard error of the energy is less than 0.7%, and the maximum energy error ΔE p is less than 0.3 MeV. (author)

  11. Defect generation/passivation by low energy hydrogen implant for silicon solar cells

    International Nuclear Information System (INIS)

    Sopori, B.L.; Zhou, T.Q.; Rozgonyi, G.A.

    1990-01-01

    Low energy ion implant is shown to produce defects in silicon. These defects include surface damage, hydrogen agglomeration, formation of platelets with (111) habit plane and decoration of dislocations. Hydrogen also produces an inversion type of surface on boron doped silicon. These effects indicate that a preferred approach for passivation is to incorporate hydrogen from the back side of the cell. A backside H + implant technique is described. The results show that degree of passivation differs for various devices. A comparison of the defect structures of hydrogenated devices indicates that the structure and the distribution of defects in the bulk of the material plays a significant role in determining the degree of passivation

  12. Radiation damage in He implanted silicon at high temperature using multi-energies

    CERN Document Server

    David, M L; Oliviero, E; Denanot, M F; Beaufort, M F; Declemy, A; Blanchard, C; Gerasimenko, N N; Barbot, J F

    2002-01-01

    He sup + ions were implanted at 800 deg. C into (1 0 0) silicon with multiple energies and selected fluences to get a number of displacement per atom constant in a large plateau. The ion-related defects have been mainly studied by transmission electron microscopy. Both the amount and the microstructure of defects have been found to be strongly dependent on the order of implants. Faceted cavities are only observed where damage overlapping occurs. The first implant provides thus nucleation sites for cavities. The generation of these sites is less efficient when using increasing energies because of damage recovery; fewer cavities are observed. Concurrently interstitial-type defects, left brace 1 1 3 right brace agglomerates, are formed. The observed state of growth of these left brace 1 1 3 right brace defects (rod-like and ribbon-like defects) is dependent on the implantation energy order but in any cases, no dislocation loops are observed even in the deepest damage region.

  13. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. (Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States)); Lynn, K.G.; Ghosh, V.; Welch, D.O. (Brookhaven National Lab., Upton, NY (United States))

    1992-01-01

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  14. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. [Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States); Lynn, K.G.; Ghosh, V.; Welch, D.O. [Brookhaven National Lab., Upton, NY (United States)

    1992-12-31

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  15. Factors affecting date of implantation, parturition, and den entry estimated from activity and body temperature in free-ranging brown bears.

    Science.gov (United States)

    Friebe, Andrea; Evans, Alina L; Arnemo, Jon M; Blanc, Stéphane; Brunberg, Sven; Fleissner, Günther; Swenson, Jon E; Zedrosser, Andreas

    2014-01-01

    Knowledge of factors influencing the timing of reproduction is important for animal conservation and management. Brown bears (Ursus arctos) are able to vary the birth date of their cubs in response to their fat stores, but little information is available about the timing of implantation and parturition in free-ranging brown bears. Body temperature and activity of pregnant brown bears is higher during the gestation period than during the rest of hibernation and drops at parturition. We compared mean daily body temperature and activity levels of pregnant and nonpregnant females during preimplantation, gestation, and lactation. Additionally we tested whether age, litter size, primiparity, environmental conditions, and the start of hibernation influence the timing of parturition. The mean date of implantation was 1 December (SD = 12), the mean date of parturition was 26 January (SD = 12), and the mean duration of the gestation period was 56 days (SD = 2). The body temperature of pregnant females was higher during the gestation and lactation periods than that of nonpregnant bears. The body temperature of pregnant females decreased during the gestation period. Activity recordings were also used to determine the date of parturition. The parturition dates calculated with activity and body temperature data did not differ significantly and were the same in 50% of the females. Older females started hibernation earlier. The start of hibernation was earlier during years with favorable environmental conditions. Dates of parturition were later during years with good environmental conditions which was unexpected. We suggest that free-ranging pregnant brown bears in areas with high levels of human activities at the beginning of the denning period, as in our study area, might prioritize investing energy in early denning than in early parturition during years with favorable environmental conditions, as a strategy to prevent disturbances caused by human.

  16. Factors affecting date of implantation, parturition, and den entry estimated from activity and body temperature in free-ranging brown bears.

    Directory of Open Access Journals (Sweden)

    Andrea Friebe

    Full Text Available Knowledge of factors influencing the timing of reproduction is important for animal conservation and management. Brown bears (Ursus arctos are able to vary the birth date of their cubs in response to their fat stores, but little information is available about the timing of implantation and parturition in free-ranging brown bears. Body temperature and activity of pregnant brown bears is higher during the gestation period than during the rest of hibernation and drops at parturition. We compared mean daily body temperature and activity levels of pregnant and nonpregnant females during preimplantation, gestation, and lactation. Additionally we tested whether age, litter size, primiparity, environmental conditions, and the start of hibernation influence the timing of parturition. The mean date of implantation was 1 December (SD = 12, the mean date of parturition was 26 January (SD = 12, and the mean duration of the gestation period was 56 days (SD = 2. The body temperature of pregnant females was higher during the gestation and lactation periods than that of nonpregnant bears. The body temperature of pregnant females decreased during the gestation period. Activity recordings were also used to determine the date of parturition. The parturition dates calculated with activity and body temperature data did not differ significantly and were the same in 50% of the females. Older females started hibernation earlier. The start of hibernation was earlier during years with favorable environmental conditions. Dates of parturition were later during years with good environmental conditions which was unexpected. We suggest that free-ranging pregnant brown bears in areas with high levels of human activities at the beginning of the denning period, as in our study area, might prioritize investing energy in early denning than in early parturition during years with favorable environmental conditions, as a strategy to prevent disturbances caused by human.

  17. Diffusion modelling of low-energy ion-implanted BF{sub 2} in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, J. [Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)], E-mail: Jerome.Marcon@univ-rouen.fr; Merabet, A. [Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, 19000 Setif (Algeria)

    2008-12-05

    We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF{sub 2}{sup +}. We have used published data for BF{sub 2}{sup +} implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data.

  18. Lab-based x-ray tomography of a cochlear implant using energy discriminating detectors for metal artefact reduction

    Science.gov (United States)

    Yokhana, Viona S. K.; Arhatari, Benedicta D.; Gureyev, Timur E.; Abbey, Brian

    2018-01-01

    X-ray computed tomography (XCT) is an important clinical diagnostic tool which is also used in a range of biological imaging applications in research. The increasing prevalence of metallic implants in medical and dental radiography and tomography has driven the demand for new approaches to solving the issue of metal artefacts in XCT. Metal artefacts occur when a highly absorbing material is imaged which is in boundary contact with one or more weakly absorbing components, such as soft-tissue. The resulting `streaking' in the reconstructed images creates significant challenges for X-ray analysis due to the non-linear dependence on the absorption properties of the sample. In this paper we introduce a new approach to removing metal artefacts which exploits the capabilities of the recently available, photon-counting PiXirad detector. Our approach works for standard lab-based polychromatic X-ray tubes and does not rely on any postprocessing of the data. The method is demonstrated using both simulated data from a test phantom and experimental data collected from a cochlear implant. The results show that by combining the individual images, which are simultaneously generated for each different energy threshold, artefact -free segmentation of the implant from the surrounding biological tissue is achieved.

  19. A CMOS frontend chip for implantable neural recording with wide voltage supply range

    International Nuclear Information System (INIS)

    Liu Jialin; Zhang Xu; Hu Xiaohui; Li Peng; Liu Ming; Chen Hongda; Guo Yatao; Li Bin

    2015-01-01

    A design for a CMOS frontend integrated circuit (chip) for neural signal acquisition working at wide voltage supply range is presented in this paper. The chip consists of a preamplifier, a serial instrumental amplifier (IA) and a cyclic analog-to-digital converter (CADC). The capacitive-coupled and capacitive-feedback topology combined with MOS-bipolar pseudo-resistor element is adopted in the preamplifier to create a −3 dB upper cut-off frequency less than 1 Hz without using a ponderous discrete device. A dual-amplifier instrumental amplifier is used to provide a low output impedance interface for ADC as well as to boost the gain. The preamplifier and the serial instrumental amplifier together provide a midband gain of 45.8 dB and have an input-referred noise of 6.7 μV rms integrated from 1 Hz to 5 kHz. The ADC digitizes the amplified signal at 12-bits precision with a highest sampling rate of 130 kS/s. The measured effective number of bits (ENOB) of the ADC is 8.7 bits. The entire circuit draws 165 to 216 μA current from the supply voltage varied from 1.34 to 3.3 V. The prototype chip is fabricated in the 0.18-μm CMOS process and occupies an area of 1.23 mm 2 (including pads). In-vitro recording was successfully carried out by the proposed frontend chip. (paper)

  20. A CMOS frontend chip for implantable neural recording with wide voltage supply range

    Science.gov (United States)

    Jialin, Liu; Xu, Zhang; Xiaohui, Hu; Yatao, Guo; Peng, Li; Ming, Liu; Bin, Li; Hongda, Chen

    2015-10-01

    A design for a CMOS frontend integrated circuit (chip) for neural signal acquisition working at wide voltage supply range is presented in this paper. The chip consists of a preamplifier, a serial instrumental amplifier (IA) and a cyclic analog-to-digital converter (CADC). The capacitive-coupled and capacitive-feedback topology combined with MOS-bipolar pseudo-resistor element is adopted in the preamplifier to create a -3 dB upper cut-off frequency less than 1 Hz without using a ponderous discrete device. A dual-amplifier instrumental amplifier is used to provide a low output impedance interface for ADC as well as to boost the gain. The preamplifier and the serial instrumental amplifier together provide a midband gain of 45.8 dB and have an input-referred noise of 6.7 μVrms integrated from 1 Hz to 5 kHz. The ADC digitizes the amplified signal at 12-bits precision with a highest sampling rate of 130 kS/s. The measured effective number of bits (ENOB) of the ADC is 8.7 bits. The entire circuit draws 165 to 216 μA current from the supply voltage varied from 1.34 to 3.3 V. The prototype chip is fabricated in the 0.18-μm CMOS process and occupies an area of 1.23 mm2 (including pads). In-vitro recording was successfully carried out by the proposed frontend chip. Project supported by the National Natural Science Foundation of China (Nos. 61474107, 61372060, 61335010, 61275200, 61178051) and the Key Program of the Chinese Academy of Sciences (No. KJZD-EW-L11-01).

  1. The effect of instantaneous input dynamic range setting on the speech perception of children with the nucleus 24 implant.

    Science.gov (United States)

    Davidson, Lisa S; Skinner, Margaret W; Holstad, Beth A; Fears, Beverly T; Richter, Marie K; Matusofsky, Margaret; Brenner, Christine; Holden, Timothy; Birath, Amy; Kettel, Jerrica L; Scollie, Susan

    2009-06-01

    The purpose of this study was to examine the effects of a wider instantaneous input dynamic range (IIDR) setting on speech perception and comfort in quiet and noise for children wearing the Nucleus 24 implant system and the Freedom speech processor. In addition, children's ability to understand soft and conversational level speech in relation to aided sound-field thresholds was examined. Thirty children (age, 7 to 17 years) with the Nucleus 24 cochlear implant system and the Freedom speech processor with two different IIDR settings (30 versus 40 dB) were tested on the Consonant Nucleus Consonant (CNC) word test at 50 and 60 dB SPL, the Bamford-Kowal-Bench Speech in Noise Test, and a loudness rating task for four-talker speech noise. Aided thresholds for frequency-modulated tones, narrowband noise, and recorded Ling sounds were obtained with the two IIDRs and examined in relation to CNC scores at 50 dB SPL. Speech Intelligibility Indices were calculated using the long-term average speech spectrum of the CNC words at 50 dB SPL measured at each test site and aided thresholds. Group mean CNC scores at 50 dB SPL with the 40 IIDR were significantly higher (p Speech in Noise Test were not significantly different for the two IIDRs. Significantly improved aided thresholds at 250 to 6000 Hz as well as higher Speech Intelligibility Indices afforded improved audibility for speech presented at soft levels (50 dB SPL). These results indicate that an increased IIDR provides improved word recognition for soft levels of speech without compromising comfort of higher levels of speech sounds or sentence recognition in noise.

  2. Wide Temperature Range Hybrid Energy Storage Device, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal concerns the fabrication of a hybrid battery capacitor (HBC) using Eltron's knowledge gained in battery and capacitor research. Energy storage systems...

  3. Exploring the range of energy savings likely from energy efficiency retrofit measures in Ireland's residential sector

    International Nuclear Information System (INIS)

    Dineen, D.; Ó Gallachóir, B.P.

    2017-01-01

    This paper estimates the potential energy savings in the Irish residential sector by 2020 due to the introduction of an ambitious retrofit programme. We estimate the technical energy savings potential of retrofit measures targeting energy efficiency of the space and water heating end uses of the 2011 stock of residential dwellings between 2012 and 2020. We build eight separate scenarios, varying the number of dwellings retrofitted and the depth of retrofit carried out in order to investigate the range of energy savings possible. In 2020 the estimated technical savings potential lies in the range from 1713 GWh to 10,817 GWh, but is more likely to fall within the lower end of this range, i.e. between 1700 and 4360 GWh. When rebound effects are taken into account this reduces further to 1100 GWh and 2800 GWh per annum. The purpose of this paper was to test the robustness of the NEEAP target savings for residential retrofit, i.e. 3000 GWh by 2020. We conclude that this target is technically feasible but very challenging and unlikely to be achieved based on progress to date. It will require a significant shift towards deeper retrofit measures compared to what has been achieved by previous schemes. - Highlights: • Paper estimates range of energy savings likely from Irish residential retrofit. • Achieving NEEAP target savings of 3000 GWh by 2020 is feasible but very challenging. • Likely savings of 1100–2800 GWh per annum in 2020, including rebound. • NEEAP target unlikely to be achieved based on current trends.

  4. Doping of two-dimensional MoS2 by high energy ion implantation

    Science.gov (United States)

    Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

    2017-12-01

    Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

  5. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  6. FEL based photon collider of TeV energy range

    International Nuclear Information System (INIS)

    Saldin, E.L.; Shnejdmiller, E.A.; Sarantsev, V.P.; Yurkov, M.V.

    1994-01-01

    Physical principles of operation of high energy photon linear colliders (PLC) based on the Compton backscattering of laser photons on high energy electrons are discussed. The main emphasis is put on the analysis of a possibility to construct the PLC with the center of mass energy 0.5-2 TeV. Free electron laser (FEL) is considered as a source of primary photons. Proposed FEL system consists of a tunable FEL oscillator (output power ∼ 1 - 10 MW) with subsequent amplification of the master signal in a FEL amplifier up to the power ∼ 3 x 10 11 W. The FEL parameters are optimized, restrictions on the electron beam and FEL magnetic system parameters are formulated and problems of technical realization are discussed. It is shown that the FEL technique provides the most suitable way to construct photon linear collider on the base of future generation linear collider. 22 refs., 10 figs., 2 tabs

  7. Autonomous Vehicles Have a Wide Range of Possible Energy Impacts

    Energy Technology Data Exchange (ETDEWEB)

    Austin Brown, Brittany Repac, Jeff Gonder

    2013-07-15

    Self-driving or “autonomous” vehicles (AVs) have leapt from science fiction into the forefront of transportation technology news. The technology is likely still years away from widespread commercial adoption, but the recent progress makes it worth considering the potential national impacts of widespread implementation. This poster makes an initial assessment of the energy impacts of AV adoptionon a per-vehicle basis and on total personal vehicle fuel use. While AVs offer numerous potential advantages in energy use, there are significant factors that could decrease or even eliminate the energy benefits under some circumstances. This analysis attempts to describe, quantify, and combine many of the possible effects. The nature and magnitude of these effects remain highly uncertain. This set of effects is very unlikely to be exhaustive, but this analysis approach can serve as a base for future estimates.

  8. THE INFLUENCE OF SURFACE-FREE ENERGY ON SUPRAGINGIVAL AND SUBGINGIVAL PLAQUE MICROBIOLOGY - AN IN-VIVO STUDY ON IMPLANTS

    NARCIS (Netherlands)

    QUIRYNEN, M; VANDERMEI, HC; BOLLEN, CML; VANDENBOSSCHE, LH; DOORNBUSCH, GI; VANSTEENBERGHE, D; BUSSCHER, HJ

    THE INFLUENCE OF SURFACE FREE ENERGY on supra- and subgingival plaque microbiology was examined in 9 patients with functional fixed prostheses supported by endosseous titanium implants. Two abutments (trans-mucosal part of the 2 stage implant) were replaced by either a new titanium abutment or a

  9. Influence of high-energy ion implantation on the microstructure of Sn - 9,8 wt. % Zn alloy

    International Nuclear Information System (INIS)

    Gusakova, O.V.

    2016-01-01

    The results of investigation of influence of Xe ion implantation on the microstructure of Sn - 9,8 wt. % Zn alloy are represented/ Analysis of the experimental results shows that the high-energy ion implantation of Xe causes a change in the particle size of zinc. (authors)

  10. Properties of short-range and long-range correlation energy density functionals from electron-electron coalescence

    International Nuclear Information System (INIS)

    Gori-Giorgi, Paola; Savin, Andreas

    2006-01-01

    The combination of density-functional theory with other approaches to the many-electron problem through the separation of the electron-electron interaction into a short-range and a long-range contribution is a promising method, which is raising more and more interest in recent years. In this work some properties of the corresponding correlation energy functionals are derived by studying the electron-electron coalescence condition for a modified (long-range-only) interaction. A general relation for the on-top (zero electron-electron distance) pair density is derived, and its usefulness is discussed with some examples. For the special case of the uniform electron gas, a simple parametrization of the on-top pair density for a long-range only interaction is presented and supported by calculations within the ''extended Overhauser model.'' The results of this work can be used to build self-interaction corrected short-range correlation energy functionals

  11. Exploring metal artifact reduction using dual-energy CT with pre-metal and post-metal implant cadaver comparison: are implant specific protocols needed?

    Science.gov (United States)

    Wellenberg, Ruud H H; Donders, Johanna C E; Kloen, Peter; Beenen, Ludo F M; Kleipool, Roeland P; Maas, Mario; Streekstra, Geert J

    2017-08-25

    To quantify and optimize metal artifact reduction using virtual monochromatic dual-energy CT for different metal implants compared to non-metal reference scans. Dual-energy CT scans of a pair of human cadaver limbs were acquired before and after implanting a titanium tibia plate, a stainless-steel tibia plate and a titanium intramedullary nail respectively. Virtual monochromatic images were analyzed from 70 to 190 keV. Region-of-interest (ROI), used to determine fluctuations and inaccuracies in CT numbers of soft tissues and bone, were placed in muscle, fat, cortical bone and intramedullary tibia canal. The stainless-steel implant resulted in more pronounced metal artifacts compared to both titanium implants. CT number inaccuracies in 70 keV reference images were minimized at 130, 180 and 190 keV for the titanium tibia plate, stainless-steel tibia plate and titanium intramedullary nail respectively. Noise, measured as the standard deviation of pixels within a ROI, was minimized at 130, 150 and 140 keV for the titanium tibia plate, stainless-steel tibia plate and titanium intramedullary nail respectively. Tailoring dual-energy CT protocols using implant specific virtual monochromatic images minimizes fluctuations and inaccuracies in CT numbers in bone and soft tissues compared to non-metal reference scans.

  12. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

    International Nuclear Information System (INIS)

    Fearn, Sarah; Chater, Richard; McPhail, David

    2004-01-01

    Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

  13. Pulsed power inductive energy storage in the microsecond range

    International Nuclear Information System (INIS)

    Rix, W.; Miller, A.R.; Thompson, J.; Waisman, E.; Wilkinson, M.; Wilson, A.

    1993-01-01

    During the past five years Maxwell has developed a series of inductive energy storage (IES) pulsed power generators; ACE 1, ACE 2, ACE 3, and ACE 4, to drive electron-beam loads. They are all based on a plasma opening switch (POS) contained in a single vacuum envelope operating at conduction times of around one microsecond. They all employ fast capacitor bank technology to match this conduction time without intermediate power conditioning. Oil or air filled transmission lines transfer capacitor bank energy to a vacuum section where the final pulse compression is accomplished. Development of the ACE series is described, emphasizing capacitor bank and the opening switch technology for delivering high voltage, multimegampere pulses to electron beam loads

  14. Ion beam studies. Part 1. The retardation of ion beams to very low energies in an implantation accelerator

    International Nuclear Information System (INIS)

    Freeman, J.H.; Temple, W.; Beanland, D.; Gard, G.A.

    1976-02-01

    The design and operation of a compact electrostatic lens for the retardation and focussing of high intensity beams of heavy ions down to energies in the range 10 to 1,000 eV is described. The use of such beams for low-energy ion implantation and for the production of uniform ion-deposited layers is outlined. The practical behaviour of the lens is shown to be in agreement with computer calculations and the theoretical model is used to delineate and explain the boundary conditions under which the focussing behaviour becomes anomalous. The calculated and measured effects of space-charge repulsion on the quality of focussing are compared and it is demonstrated that a simple retardation lens design can be effectively employed at high flux. (author)

  15. The examination of calcium ion implanted alumina with energy filtered transmission electron microscopy

    International Nuclear Information System (INIS)

    Hunt, E.M.; Hampikian, J.M.

    1997-01-01

    Ion implantation can be used to alter in the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca + to a fluence of 5 x 10 16 ions/cm 2 . Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ∼7--8 nm in diameter. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium. Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals. EFTEM has confirmed that the aluminum present in the particles is metallic in nature, that the particles are oxygen deficient in comparison with the matrix material and that the particles are deficient in calcium, and therefore not likely to be calcia. The particles thus appear to be FCC Al (possibly alloyed with a few percent Ca) with a lattice parameter of 0.409nm. A similar result was obtained for yttrium ion implantation into alumina

  16. Kilovoltage energy imaging with a radiotherapy linac with a continuously variable energy range.

    Science.gov (United States)

    Roberts, D A; Hansen, V N; Thompson, M G; Poludniowski, G; Niven, A; Seco, J; Evans, P M

    2012-03-01

    In this paper, the effect on image quality of significantly reducing the primary electron energy of a radiotherapy accelerator is investigated using a novel waveguide test piece. The waveguide contains a novel variable coupling device (rotovane), allowing for a wide continuously variable energy range of between 1.4 and 9 MeV suitable for both imaging and therapy. Imaging at linac accelerating potentials close to 1 MV was investigated experimentally and via Monte Carlo simulations. An imaging beam line was designed, and planar and cone beam computed tomography images were obtained to enable qualitative and quantitative comparisons with kilovoltage and megavoltage imaging systems. The imaging beam had an electron energy of 1.4 MeV, which was incident on a water cooled electron window consisting of stainless steel, a 5 mm carbon electron absorber and 2.5 mm aluminium filtration. Images were acquired with an amorphous silicon detector sensitive to diagnostic x-ray energies. The x-ray beam had an average energy of 220 keV and half value layer of 5.9 mm of copper. Cone beam CT images with the same contrast to noise ratio as a gantry mounted kilovoltage imaging system were obtained with doses as low as 2 cGy. This dose is equivalent to a single 6 MV portal image. While 12 times higher than a 100 kVp CBCT system (Elekta XVI), this dose is 140 times lower than a 6 MV cone beam imaging system and 6 times lower than previously published LowZ imaging beams operating at higher (4-5 MeV) energies. The novel coupling device provides for a wide range of electron energies that are suitable for kilovoltage quality imaging and therapy. The imaging system provides high contrast images from the therapy portal at low dose, approaching that of gantry mounted kilovoltage x-ray systems. Additionally, the system provides low dose imaging directly from the therapy portal, potentially allowing for target tracking during radiotherapy treatment. There is the scope with such a tuneable system

  17. Electron beam absorption in solid and in water phantoms: depth scaling and energy-range relations

    International Nuclear Information System (INIS)

    Grosswendt, B.; Roos, M.

    1989-01-01

    In electron dosimetry energy parameters are used with values evaluated from ranges in water. The electron ranges in water may be deduced from ranges measured in solid phantoms. Several procedures recommended by national and international organisations differ both in the scaling of the ranges and in the energy-range relations for water. Using the Monte Carlo method the application of different procedures for electron energies below 10 MeV is studied for different phantom materials. It is shown that deviations in the range scaling and in the energy-range relations for water may accumulate to give energy errors of several per cent. In consequence energy-range relations are deduced for several solid phantom materials which enable a single-step energy determination. (author)

  18. Characterization of junctions produced by medium-energy ion implantation in silicon

    International Nuclear Information System (INIS)

    Monfret, A.

    1970-01-01

    Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [fr

  19. Intracorporeal Heat Distribution from Fully Implantable Energy Sources for Mechanical Circulatory Support: A Computational Proof-of-Concept Study

    OpenAIRE

    Biasetti, Jacopo; Pustavoitau, Aliaksei; Spazzini, Pier Giorgio

    2017-01-01

    Mechanical circulatory support devices, such as total artificial hearts and left ventricular assist devices, rely on external energy sources for their continuous operation. Clinically approved power supplies rely on percutaneous cables connecting an external energy source to the implanted device with the associated risk of infections. One alternative, investigated in the 70s and 80s, employs a fully implanted nuclear power source. The heat generated by the nuclear decay can be converted into ...

  20. Electromagnetic Compatibility of Transcutaneous Energy Transmission Systemfor Totally Implantable Artificial Heart

    Science.gov (United States)

    Shiba, Kenji; Koshiji, Kohji

    Transcutaneous Energy Transmission (TET) is one way of providing the energy needed to power a totally implantable artificial heart (TIAH). In the present study, an externally coupled TET system was implanted in a prototype human phantom to evaluate emission and immunity. In the emission evaluation, measurements were conducted based on CISPR Pub.11 and VDE 0871 standards, while immunity tests were based on the standards of the IEC 61000-4 series. The magnetic field of the radiated emission was measured using a loop antenna. At 0.1[MHz], we found the greatest magnetic field of 47.8 [dBμA/m], somewhat less than CISPR’s upper limit of 54 [dBμA/m]. For the conducted emission, by installing a noise filter and ferrite beads in the input section of the DC-power supply, conducted emission could be kept within the allowable limits of CISPR Pub.11 and VDE 0871. Finally, the immunity tests against radiated and conducted emission, electrostatic discharge and voltage fluctuation proved that the prototype could withstand the maximum level of disturbance. These results confirmed that the TET system implanted in a human phantom could, through modification, meet the emission and immunity standards.

  1. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  2. Theoretical ion implantation profiles for low energy protons under channeling conditions

    International Nuclear Information System (INIS)

    Nobel, J.A.; Sabin, J.R.; Trickey, S.B.

    1994-01-01

    The authors present early results from the CHANNEL code, which simulates the passage of ionized projectiles through bulk solids. CHANNEL solves the classical equations of motion for the projectile using a force obtained from the gradient of the quantum mechanically derived coulombic potential of the solid (determined via a full potential augmented plane wave (FLAPW) calculation on the bulk) and a quantum mechanical energy dissipation term, the stopping power, as determined from the method of Echenique, Neiminen, and Ritchie. The code then generates the trajectory of the ionic projectile for a given incident position on the unit cell face and an initial velocity. The authors use CHANNEL to generate an ion (proton) implantation profile for the test case of simple cubic hydrogen with the projectile's initial velocity parallel to the (100) channel. Further preliminary results for ion implantation profiles of protons in diamond structure Si, with initial velocity along the (100) and (110) channels, are given

  3. Radiation blistering of Nb implanted sequentially with helium ions of different energies (3-500 keV)

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Krasulin, U.L.; Martinenko, U.V.; Das, S.K.; Kaminsky, M.S.

    1976-01-01

    Cold rolled, polycrystalline niobium samples were irradiated at room temperature with 4 He + ions sequentially at 14 different energies over an energy range from 3 keV--500 keV in steps of 50 keV. The dose for each energy was chosen to give an approximately uniform concentration of helium between the implant depths corresponding to 3 keV and 500 keV. In one set of experiments the irradiations were started at the Kurchatov Institute with 3 keV 4 He + ions and extended up to 80 keV in several steps. Subsequently, the same target area was irradiated with 4 He + ions at Argonne National Laboratory (ANL) starting at 100 keV and increased to 500 keV in steps of 50 keV. Another set of irradiations were started at ANL with 500 keV 4 He + ions and continued with decreasing ion energies to 100 keV. Subsequently, the same area was irradiated at the Kurchatov Institute starting at 80 keV and continued with decreasing ion energies to 3 keV. Both sets of irradiations were completed for two different total doses, 0.5 C cm -2 and 1.0 C cm -2

  4. Alternative separation of exchange and correlation energies in range-separated density-functional perturbation theory

    DEFF Research Database (Denmark)

    Cornaton, Y.; Stoyanova, A.; Jensen, Hans Jørgen Aagaard

    2013-01-01

    of the noninteracting Kohn-Sham one. When second-order corrections to the density are neglected, the energy expression reduces to a range-separated double-hybrid (RSDH) type of functional, RSDHf, where "f" stands for "full-range integrals" as the regular full-range interaction appears explicitly in the energy...

  5. Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation

    International Nuclear Information System (INIS)

    Roth, E.G.; Holland, O.W.; Duggan, J.L.

    1999-01-01

    Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectrometry was used to profile the dopant distributions. copyright 1999 American Institute of Physics

  6. Surface mechanical attrition treatment of tungsten and its behavior under low energy deuterium plasma implantation relevant to ITER divertor conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, H.Y.; Yuan, Y.; Fu, B.Q.; Godfrey, A.; Liu, W. [Tsinghua Univ.. Lab. of Advanced Materials, Beijing (China); Zhang, Y.B. [Technical Univ. og Denmark. DTU Risoe Campus, Roskilde (Denmark); Tao, N.R. [Chinese Academy of Sciences, Shenyang (China)

    2012-11-01

    In the light of a foreseen application for tungsten (W) as an ITER divertor material samples have been plastically deformed by a surface mechanical attrition treatment (SMAT) and by cold rolling. The resistance to blister formation by low energy deuterium implantation in these samples has been examined, with the result that the structure is significantly improved as the structural scale is reduced to the nanometer range in the SMAT sample. The distribution of blisters in this sample is however bimodal, due to the formation of several very large blisters, which are heterogeneously distributed. The observations suggest that process optimization must be a next step in the development with a view to the application of plastically deformed W in a fusion reactor. (Author)

  7. Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

    Energy Technology Data Exchange (ETDEWEB)

    Pentecoste, Lucile [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Thomann, Anne-Lise, E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Melhem, Amer; Caillard, Amael; Cuynet, Stéphane; Lecas, Thomas; Brault, Pascal [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Desgardin, Pierre; Barthe, Marie-France [CNRS, UPR3079 CEMHTI, 1D avenue de la Recherche Scientifique, 45071 Orléans Cedex2 (France)

    2016-09-15

    The aim of this work is to investigate the first stages of defect formation in tungsten (W) due to the accumulation of helium (He) atoms inside the crystal lattice. To reach the required implantation conditions, i.e. low He ion fluxes (10{sup 11}–10{sup 14} ions.cm{sup 2}.s{sup −1}) and kinetic energies below the W atom displacement threshold (about 500 eV for He{sup +}), an ICP source has been designed and connected to a diffusion chamber. Implantation conditions have been characterized by means of complementary diagnostics modified for measurements in this very low density helium plasma. It was shown that lowest ion fluxes could only be reached for the discharge working in capacitive mode either in α or γ regime. Special attention was paid to control the energy gained by the ions by acceleration through the sheath at the direct current biased substrate. At very low helium pressure, in α regime, a broad ion energy distribution function was evidenced, whereas a peak centered on the potential difference between the plasma and the biased substrate was found at higher pressures in the γ mode. Polycrystalline tungsten samples were exposed to the helium plasma in both regimes of the discharge and characterized by positron annihilation spectroscopy in order to detect the formed vacancy defects. It was found that W vacancies are able to be formed just by helium accumulation and that the same final implanted state is reached, whatever the operating mode of the capacitive discharge.

  8. SU-F-T-126: Microdosimetic Evaluation of Proton Energy Distributions in the Vicinity of Metal Implants

    Energy Technology Data Exchange (ETDEWEB)

    Heczko, S; McAuley, GA; Slater, JM [Loma Linda University, Loma Linda, CA (United States); Wroe, A [Loma Linda University, Loma Linda, CA (United States); Loma Linda University Medical Center, Loma Linda, CA (United States)

    2016-06-15

    Purpose: To evaluate the impact of titanium and surgical stainless steel implants on the microscopic dose distribution in proton treatment plans Methods: Geant4 Monte Carlo simulations were used to analyze the microdosimetric distribution of proton radiation in the vicinity of 3.1 mm thick CP Grade 4 titanium (Ti) or 316 stainless steel (SS316) plates in a water phantom. Additional simulations were performed using either water, or water with a density equivalent to the respective metals (Tiwater, SS316water) (to reflect common practice in treatment planning). Implants were placed at the COM of SOBPs of 157 MeV (range of ∼15 cm in water) protons with 30 or 60 mm modulation. Primary and secondary particle dose and fluence, frequency-weighted and dose-weighted average lineal energy, average radiation quality factor, dose equivalent and energy deposition histograms in the plate vicinity were compared. Results: Preliminary results show frequency-weighted (yf) and dose-weighted lineal energy (yd) was increased downstream of the Ti plate (yf = 3.1 keV/µm; yd = 5.5 keV/µm) and Tiwater (yf = 4.1 keV/µm; yd = 6.8 keV/µm) compared to that of water (ie, the absence of a plate) (yf = 2.5 keV/µm; yd = 4.5 keV/µm). In addition, downstream proton dose deposition was also elevated due to the presence of the Ti plate or Tiwater. The additional dose deposited at higher lineal energy implies that tissues downstream of the plate will receive a higher dose equivalent. Detailed analyses of the Ti, Tiwater, SS316, and SS316 water simulations will be presented. Conclusion: The presence of high-density materials introduces changes in the spatial distribution of radiation in the vicinity of an implant. Further work quantifying these effects could be incorporated into future treatment planning systems resulting in more accurate treatment plans. This project was sponsored with funding from the Department of Defense (DOD # W81XWH-10-2-0192).

  9. SU-F-T-126: Microdosimetic Evaluation of Proton Energy Distributions in the Vicinity of Metal Implants

    International Nuclear Information System (INIS)

    Heczko, S; McAuley, GA; Slater, JM; Wroe, A

    2016-01-01

    Purpose: To evaluate the impact of titanium and surgical stainless steel implants on the microscopic dose distribution in proton treatment plans Methods: Geant4 Monte Carlo simulations were used to analyze the microdosimetric distribution of proton radiation in the vicinity of 3.1 mm thick CP Grade 4 titanium (Ti) or 316 stainless steel (SS316) plates in a water phantom. Additional simulations were performed using either water, or water with a density equivalent to the respective metals (Tiwater, SS316water) (to reflect common practice in treatment planning). Implants were placed at the COM of SOBPs of 157 MeV (range of ∼15 cm in water) protons with 30 or 60 mm modulation. Primary and secondary particle dose and fluence, frequency-weighted and dose-weighted average lineal energy, average radiation quality factor, dose equivalent and energy deposition histograms in the plate vicinity were compared. Results: Preliminary results show frequency-weighted (yf) and dose-weighted lineal energy (yd) was increased downstream of the Ti plate (yf = 3.1 keV/µm; yd = 5.5 keV/µm) and Tiwater (yf = 4.1 keV/µm; yd = 6.8 keV/µm) compared to that of water (ie, the absence of a plate) (yf = 2.5 keV/µm; yd = 4.5 keV/µm). In addition, downstream proton dose deposition was also elevated due to the presence of the Ti plate or Tiwater. The additional dose deposited at higher lineal energy implies that tissues downstream of the plate will receive a higher dose equivalent. Detailed analyses of the Ti, Tiwater, SS316, and SS316 water simulations will be presented. Conclusion: The presence of high-density materials introduces changes in the spatial distribution of radiation in the vicinity of an implant. Further work quantifying these effects could be incorporated into future treatment planning systems resulting in more accurate treatment plans. This project was sponsored with funding from the Department of Defense (DOD # W81XWH-10-2-0192).

  10. A Wireless Magnetic Resonance Energy Transfer System for Micro Implantable Medical Sensors

    Directory of Open Access Journals (Sweden)

    Tianyang Yang

    2012-07-01

    Full Text Available Based on the magnetic resonance coupling principle, in this paper a wireless energy transfer system is designed and implemented for the power supply of micro-implantable medical sensors. The entire system is composed of the in vitro part, including the energy transmitting circuit and resonant transmitter coils, and in vivo part, including the micro resonant receiver coils and signal shaping chip which includes the rectifier module and LDO voltage regulator module. Transmitter and receiver coils are wound by Litz wire, and the diameter of the receiver coils is just 1.9 cm. The energy transfer efficiency of the four-coil system is greatly improved compared to the conventional two-coil system. When the distance between the transmitter coils and the receiver coils is 1.5 cm, the transfer efficiency is 85% at the frequency of 742 kHz. The power transfer efficiency can be optimized by adding magnetic enhanced resonators. The receiving voltage signal is converted to a stable output voltage of 3.3 V and a current of 10 mA at the distance of 2 cm. In addition, the output current varies with changes in the distance. The whole implanted part is packaged with PDMS of excellent biocompatibility and the volume of it is about 1 cm3.

  11. X-Ray diffraction studies of silicon implanted with high energy ions

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Graeff, W.

    1998-01-01

    The character of lattice deformation in silicon implanted with high energy alpha-particles and protons was studied using a number of X-ray methods. The experiments included double-crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter distribution proportional to the vacancy-interstitial distribution coming from the Biersack-ziegler theory. The theoretical rocking curves and distribution in back-reflection double-crystal and section topographs well corresponding to the experimental results were calculated using numerical integration of the takagi-taupin equations

  12. A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

    Science.gov (United States)

    Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

    2012-08-01

    An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

  13. Defect diffusion during annealing of low-energy ion-implanted silicon

    International Nuclear Information System (INIS)

    Bedrossian, P.J.; Caturla, M.J.; Diaz de la Rubia, T.

    1997-01-01

    The authors present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7 x 7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, they observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations

  14. A 3-DOF SOI MEMS ultrasonic energy harvester for implanted devices

    International Nuclear Information System (INIS)

    Fowler, A G; Moheimani, S O R; Behrens, S

    2013-01-01

    This paper reports the design and testing of a microelectromechanical systems (MEMS) energy harvester that is designed to harvest electrical energy from an external source of ultrasonic waves. This mechanism is potentially suited to applications including the powering of implanted devices for biomedical applications. The harvester employs a novel 3-degree of freedom design, with electrical energy being generated from displacements of a proof mass via electrostatic transducers. A silicon-on-insulator MEMS process was used to fabricate the device, with experimental characterization showing that the harvester can generate 24.7 nW, 19.8 nW, and 14.5 nW of electrical power respectively through its x-, y-, and z-axis vibrational modes

  15. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  16. A novel kerf-free wafering process combining stress-induced spalling and low energy hydrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Pingault, Timothee; Pokam-Kuisseu, Pauline Sylvia; Ntsoenzok, Esidor [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Blondeau, Jean-Philippe [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Universite d' Orleans, Chateau de la Source, 45100 Orleans (France); Ulyashin, Alexander [SINTEF, Forskningsveien 1, 0314 Oslo (Norway); Labrim, Hicham; Belhorma, Bouchra [CNESTEN, B.P. 1382 R.P., 10001 Rabat (Morocco)

    2016-12-15

    In this work, we studied the potential use of low-energy hydrogen implantation as a guide for the stress-induced cleavage. Low-energy, high fluence hydrogen implantation in silicon leads, in the right stiffening conditions, to the detachment of a thin layer, around a few hundreds nm thick, of monocrystalline silicon. We implanted monocrystalline silicon wafers with low-energy hydrogen, and then glued them on a cheap metal layer. Upon cooling down, the stress induced by the stressor layers (hardened glue and metal) leads to the detachment of a thin silicon layer, which thickness is determined by the implantation energy. We were then able to clearly demonstrate that, as expected, hydrogen oversaturation layer is very efficient to guide the stress. Using such process, thin silicon layers of around 710 nm-thick were successfully detached from low-energy implanted silicon wafers. Such layers can be used for the growth of very good quality monocrystalline silicon of around 50 μm-thick or less. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

    International Nuclear Information System (INIS)

    Fiala, J.; Armour, D. G.; Berg, J. A. van der; Holmes, A. J. T.; Goldberg, R. D.; Collart, E. H. J.

    2006-01-01

    The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

  18. Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai; Toyohara, Taiga; Nakata, Jyoji [Department of mathematics and physics, Kanagawa University, 2946, Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

    2016-06-15

    We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscope (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.

  19. Assessment of tidal range energy resources based on flux conservation in Jiantiao Bay, China

    Science.gov (United States)

    Du, Min; Wu, He; Yu, Huaming; Lv, Ting; Li, Jiangyu; Yu, Yujun

    2017-12-01

    La Rance Tidal Range Power Station in France and Jiangxia Tidal Range Power Station in China have been both long-term successful commercialized operations as kind of role models for public at large for more than 40 years. The Sihwa Lake Tidal Range Power Station in South Korea has also developed to be the largest marine renewable power station with its installed capacity 254 MW since 2010. These practical applications prove that the tidal range energy as one kind of marine renewable energy exploitation and utilization technology is becoming more and more mature and it is used more and more widely. However, the assessment of the tidal range energy resources is not well developed nowadays. This paper summarizes the main problems in tidal range power resource assessment, gives a brief introduction to tidal potential energy theory, and then we present an analyzed and estimated method based on the tide numerical modeling. The technical characteristics and applicability of these two approaches are compared with each other. Furthermore, based on the theory of tidal range energy generation combined with flux conservation, this paper proposes a new assessment method that include a series of evaluation parameters and it can be easily operated to calculate the tidal range energy of the sea. Finally, this method is applied on assessment of the tidal range power energy of the Jiantiao Harbor in Zhejiang Province, China for demonstration and examination.

  20. Energy of nuclear-active particles in the 1-50 TeV energy range

    International Nuclear Information System (INIS)

    Kotlyarevskij, D.M.; Garsevanishvili, L.P.; Morozov, I.V.

    1979-01-01

    The ''TsKhRA-TsKARO'' installation designed for the investigation of cosmic beams interaction with nuclei in the energy range of 1-50 TeV is described. The installation comprises a magnetic spark spectrometer, photography system, ionization calorimeter and scintillating trigger device. The ionization calorimeter contains 12 rows of ionization chambers interlayed with 4 lead and 8 iron absorbers. The rows of ionization chambers of the calorimeter upper half are placed in the mutually-perpendicular direction to restore the direction and spatial situation of the electron-nuclear cascade. All in all the ionization calorimeter contains 100 channels of preintensifiers from which the information is transmitted to the terminal intensifiers and then to the storage cells. The aperture ratio of the whole installation (taking account of the upper chambers) is 0.5 m 2 /steradian, and the aperture ratio of the calorimeter together with the lower chambers is approximately 2 m 2 /steradian. Presented are integral spectra of the hadrons at the height of mountains and at the height of 2500 m above sea level obtained with the help of the installation described. Comparison of the number of charged and neutral particles recorded with the ''TsKhRA-TsKARO'' installation agrees well with the known ratio of charged and neutral cosmic hadrons on the heights of mountains n/c = 0.52+-0.05

  1. The temperature effect of low-energy ion beam implantation on seed

    International Nuclear Information System (INIS)

    Chang Shenghe; Su Mingjie; Qin Guangyong; Wu Yuping; Zhao Haizhen

    2005-01-01

    The temperature effects of low-energy ion beam implantation on the seed germination were studied. Maize dry seeds were covered with copy paper, aluminum foil and without cover, respectively. Results showed that the germination rate of the seeds covered with paper which was the bad heat transmitter was the highest among three treatments, while that covered with aluminum foil which can transmit heat energy well was the least. The germination rate of the seeds covered with nothing was the second. Temperature affected seeds germination markedly. Generally the temperature of the target room inhibited the seeds' germination. After minus the effects of the temperature in the target room, the germination rates of the seeds were modified in this paper. The modified germination rate curve was also provided. (authors)

  2. Energy loss of muons in the energy range 1-10000 GeV

    International Nuclear Information System (INIS)

    Lohmann, W.; Kopp, R.; Voss, R.

    1985-01-01

    A summary is given of the most recent formulae for the cross-sections contributing to the energy loss of muons in matter, notably due to electro-magnetic interactions (ionization, bremsstrahlung and electron-pair production) and nuclear interactions. Computed energy losses dE/dx are tabulated for muons with energy between 1 GeV and 10,000 GeV in a number of materials commonly used in high-energy physics experiments. In comparison with earlier tables, these show deviations that grow with energy and amount to several per cent at 200 GeV muon energy. (orig.)

  3. Numerical simulation on range of high-energy electron moving in accelerator target

    International Nuclear Information System (INIS)

    Shao Wencheng; Sun Punan; Dai Wenjiang

    2008-01-01

    In order to determine the range of high-energy electron moving in accelerator target, the range of electron with the energy range of 1 to 100 MeV moving in common target material of accelerator was calculated by Monte-Carlo method. Comparison between the calculated result and the published data were performed. The results of Monte-Carlo calculation are in good agreement with the published data. Empirical formulas were obtained for the range of high-energy electron with the energy range of 1 to 100 MeV in common target material by curve fitting, offering a series of referenced data for the design of targets in electron accelerator. (authors)

  4. Implantable Biomedical Signal Monitoring Using RF Energy Harvestingand On-Chip Antenna

    Directory of Open Access Journals (Sweden)

    Jiann-Shiun Yuan

    2015-08-01

    Full Text Available This paper presents the design of an energy harvesting wireless and battery-less silicon-on-chip (SoC device that can be implanted in the human body to monitor certain health conditions. The proposed architecture has been designed on TSMC 0.18μm CMOS ICs and is an integrated system with a rectenna (antenna and rectifier and transmitting circuit, all on a single chip powered by an external transmitter and that is small enough to be inserted in the human eye, heart or brain. The transmitting and receiving antennas operate in the 5.8- GHz ISM band and have a -10dB gain. The distinguishing feature of this design is the rectenna that comprises of a singlestage diode connected NMOS rectifier and a 3-D on-chip antenna that occupies only 2.5 × 1 × 2.8 mm3 of chip area and has the ability to communicate within proximity of 5 cm while giving 10% efficiency. The external source is a reader that powers up the RF rectifier in the implantable chip triggering it to start sending data back to the reader enabling an efficient method of health evaluation for the patient.

  5. Room temperature diamond-like carbon coatings produced by low energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Markwitz, A., E-mail: a.markwitz@gns.cri.nz [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Mohr, B.; Leveneur, J. [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand)

    2014-07-15

    Nanometre-smooth diamond-like carbon coatings (DLC) were produced at room temperature with ion implantation using 6 kV C{sub 3}H{sub y}{sup +} ion beams. Ion beam analysis measurements showed that the coatings contain no heavy Z impurities at the level of 100 ppm, have a homogeneous stoichiometry in depth and a hydrogen concentration of typically 25 at.%. High resolution TEM analysis showed high quality and atomically flat amorphous coatings on wafer silicon. Combined TEM and RBS analysis gave a coating density of 3.25 g cm{sup −3}. Raman spectroscopy was performed to probe for sp{sup 2}/sp{sup 3} bonds in the coatings. The results indicate that low energy ion implantation with 6 kV produces hydrogenated amorphous carbon coatings with a sp{sup 3} content of about 20%. Results highlight the opportunity of developing room temperature DLC coatings with ion beam technology for industrial applications.

  6. Energy requirements for gestation and lactation in a delayed implanter, the American badger.

    Science.gov (United States)

    Harlow, H J; Miller, B; Ryder, T; Ryder, L

    1985-01-01

    1. Two adult female badgers were water-deprived and/or fasted during the last one-half to two-thirds of pregnancy while a third pregnant female received water ad libitum and was fed meat and dog food. 2. The litter size, birth weights, post partum energy consumption, growth rate, development of homeothermy, tooth eruption and date of weaning, as well as other developmental characteristics, were not significantly different between cubs born to the fed or fasted mothers. 3. The energy demands for gestation are apparently small and are accommodated by fat reserves during periods of food deprivation. However, the calculated energy for lactation is 16 times that of gestation, which is quadruple the expenditure for most mammals. 4. As a result of delayed implantation, the length of gestation and litter weights of badgers are considerably below those predicted from allometric equations. 5. The period of lactation is therefore extremely critical to the survival of both the cubs and lactating adults which require heavy fat stores and possibly torpor to ensure sufficient energy availability during prolonged winter food shortage.

  7. Ge nano-layer fabricated by high-fluence low-energy ion implantation

    International Nuclear Information System (INIS)

    Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

    2006-01-01

    A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

  8. X-ray diffraction studies of silicon implanted with high energy ions

    Energy Technology Data Exchange (ETDEWEB)

    Wieteska, K [Institute of Atomic Energy, Otwock-Swierk, (Poland); Wierzchowski, W [Institute of Electronic Materials Technology, Warsaw, (Poland); Graeff, W [Hasylab at Desy, Hamburg, (Germany)

    1997-12-31

    The character of lattice deformation in silicon in implanted with high energy {alpha} particles and protons was studied with a number of X-ray methods. The experiments included double crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter depth distribution proportional to the vacancy-interstitial distribution coming from the Biersack-Ziegler theory. The theoretical rocking curves and density distribution in back-reflection double-crystal and section topography well corresponding to experimental results were calculated using numerical integration of the Takagi-Taupin equations. 9 figs.

  9. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  10. Studies on biological effects of low energy N+ on ion beam implantation rice

    International Nuclear Information System (INIS)

    Wang Songli; Huang Qunce; Wang Tiegu; Qin Guangyong

    2006-01-01

    Dry seeds of five varieties of rice were implanted by 25 KeV low energy N + with doses of 2.0 x 10 17 , 2.5 x 10 17 and 3.0 x 10 17 N + /cm 2 , respectively. Mutant plants were selected from their progenies and the biological effects of the mutant plants were studied. The results showed that chlorophyll content of mutant plants was higher than that of the control, and one of those is as high as 148.67% of chlorophyll content compared with the control. Isoenzyme activities (POD, CAT and SOD) of mutant plants were different from the control plants. And AFLP analysis showed that the similarity between variant plants and feminine control plants was higher than that between variant plants and masculine control plants. (authors)

  11. Theoretical study of cylindrical energy analyzers for MeV range heavy ion beam probes

    International Nuclear Information System (INIS)

    Fujisawa, A.; Hamada, Y.

    1993-07-01

    A cylindrical energy analyzer with drift spaces is shown to have a second order focusing for beam incident angle when the deflection angle is properly chosen. The analyzer has a possibility to be applied to MeV range heavy ion beam probes, and will be also available for accurate particle energy measurements in many other fields. (author)

  12. Deuteron stripping on beryllium target in the 100-2300 MeV energy range

    International Nuclear Information System (INIS)

    Lecolley, J.F.; Varignon, C.; Durand, D.; Le Brun, C.; Lecolley, F.R.; Lefebvres, F.; Louvel, M.; Thun, J.; Borne, F.; Martinez, E.; Menard, S.; Pras, P.; Boudard, A.; Duchazeaubeneix, J.C.; Durand, J.M.; Frehaut, J.; Hanappe, F.; Ledoux, X.; Legrain, R.; Leray, S.; Milleret, G.; Patin, Y.; Stuttge, L.; Terrien, Y.

    1999-01-01

    Cross sections for stripping and dissociation of deuterons interacting with Be targets in the 100-2300 MeV energy range have been measured. Comparisons with model calculations suggest a dominant contribution of the stripping process. It is also shown that the deuteron break-up cross section exhibits the same energy dependence as the nucleon-nucleon cross section. (orig.)

  13. Ion implantation of boron in germanium

    International Nuclear Information System (INIS)

    Jones, K.S.

    1985-05-01

    Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

  14. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    Science.gov (United States)

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 V in gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  15. Mechanism of long-range penetration of low-energy ions in botanic samples

    International Nuclear Information System (INIS)

    Liu Feng; Wang Yugang; Xue Jianming; Wang Sixue; Du Guanghua; Yan Sha; Zhao Weijiang

    2002-01-01

    The authors present experimental evidence to reveal the mechanism of long-range penetration of low-energy ions in botanic samples. In the 100 keV Ar + ion transmission measurement, the result confirmed that low-energy ions could penetrate at least 60 μm thick kidney bean slices with the probability of about 1.0 x 10 -5 . The energy spectrum of 1 MeV He + ions penetrating botanic samples has shown that there is a peak of the count of ions with little energy loss. The probability of the low-energy ions penetrating the botanic sample is almost the same as that of the high-energy ions penetrating the same samples with little energy loss. The results indicate that there are some micro-regions with mass thickness less than the projectile range of low-energy ions in the botanic samples and they result in the long-range penetration of low-energy ions in botanic samples

  16. Alpha Beam Energy Determination Using a Range Measuring Device for Radioisotope Production

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jun Yong; Kim, Byeon Gil; Hong, Seung Pyo; Kim, Ran Young; Chun, Kwon Soo [Korea Institute of Radiological and Medical Sciences, Seoul (Korea, Republic of)

    2016-05-15

    The threshold energy of the {sup 209}Bi(α,3n){sup 210} At reaction is at about 30MeV. Our laboratory suggested an energy measurement method to confirm the proton-beam's energy by using a range measurement device. The experiment was performed energy measurement of alpha beam. The alpha beam of energy 29 MeV has been extracted from the cyclotron for the production of {sup 211}At. This device was composed of four parts: an absorber, a drive shaft, and a servo motor and a Faraday cup. The drive shaft was mounted on the absorber and connects with the axis of the servo motor and rotates linearly and circularly by this servo motor. A Faraday cup is for measuring the beam flux. As this drive shaft rotates, the thickness of the absorber varies depending on the rotation angle of the absorber. The energy of the alpha particle accelerated and extracted from MC-50 cyclotron was calculated with the measurement of the particle range in Al foil and using ASTAR, SRIM, MCNPX software. There were a little discrepancy between the expected energy and the calculated energy within the 0.5MeV error range. We have a plan to make an experiment with various alpha particle energies and another methodology, for example, the cross section measurement of the nuclear reaction.

  17. SIMS analysis of isotopic impurities in ion implants

    International Nuclear Information System (INIS)

    Sykes, D.E.; Blunt, R.T.

    1986-01-01

    The n-type dopant species Si and Se used for ion implantation in GaAs are multi-isotopic with the most abundant isotope not chosen because of potential interferences with residual gases. SIMS analysis of a range of 29 Si implants produced by several designs of ion implanter all showed significant 28 Si impurity with a different depth distribution from that of the deliberately implanted 29 Si isotope. This effect was observed to varying degrees with all fifteen implanters examined and in every 29 Si implant analysed to date 29 Si + , 29 Si ++ and 30 Si implants all show the same effect. In the case of Se implantation, poor mass resolution results in the implantation of all isotopes with the same implant distribution (i.e. energy), whilst implants carried out with good mass resolution show the implantation of all isotopes with the characteristic lower depth distribution of the impurity isotopes as found in the Si implants. This effect has also been observed in p-type implants into GaAs (Mg) and for Ga implanted in Si. A tentative explanation of the effect is proposed. (author)

  18. Performance tests of a special ionization chamber for X-rays in mammography energy range

    Energy Technology Data Exchange (ETDEWEB)

    Silva, J.O., E-mail: jonas.silva@ufg.br [Universidade Federal de Goiás (UFG), Goiânia (Brazil). Instituto de Física; Caldas, L.V.E. [Instituto de Pesquisas Energéticas e Nucleares (IPEN-CNEN/SP), São Paulo, SP (Brazil). Centro de Metrologia das Radiações

    2017-07-01

    A special mammography homemade ionization chamber was developed to be applied for mammography energy range dosimetry. This chamber has a total sensitive volume of 6 cm{sup 3} and is made of a PMMA body and graphite coated collecting electrode. Performance tests as saturation, ion collection efficiency, linearity of chamber response versus air kerma rate and energy dependence were determined. The results obtained with this special homemade ionization chamber are within the limits stated in international recommendations. This chamber can be used in quality control programs of mammography energy range. All measurements were carried out at the Calibration Laboratory of IPEN. (author)

  19. Mean range and energy of 28Si ions some Makrofol track detectors

    International Nuclear Information System (INIS)

    Shyam, S.; Mishra, R.; Tripathy, S.P.; Mawar, A.K.; Dwivedi, K.K.; Khathing, D.T.; Srivastava, A.; Avasthi, D.K.

    2000-01-01

    The rate of energy loss of the impinging ion as it passes through succeeding layers of the target material gives information regarding the nature of material and helps to calculate the range of the ions in a thick target in which the ions are stopped. Here the range, energy loss of 118 MeV 28 Si were measured in Makrofol-N, Makrofol-G and Makrofol-KG, using nuclear track technique. The experimental range data are compared with the theoretical values obtained from different computer codes. (author)

  20. Energy Impacts of Effective Range Hood Use for all U.S. Residential Cooking

    Energy Technology Data Exchange (ETDEWEB)

    Logue, Jennifer M; Singer, Brett

    2014-06-01

    Range hood use during residential cooking is essential to maintaining good indoor air quality. However, widespread use will impact the energy demand of the U.S. housing stock. This paper describes a modeling study to determine site energy, source energy, and consumer costs for comprehensive range hood use. To estimate the energy impacts for all 113 million homes in the U.S., we extrapolated from the simulation of a representative weighted sample of 50,000 virtual homes developed from the 2009 Residential Energy Consumption Survey database. A physics-based simulation model that considered fan energy, energy to condition additional incoming air, and the effect on home heating and cooling due to exhausting the heat from cooking was applied to each home. Hoods performing at a level common to hoods currently in U.S. homes would require 19?33 TWh [69?120 PJ] of site energy, 31?53 TWh [110-190 PJ] of source energy; and would cost consumers $1.2?2.1 billion (U.S.$2010) annually in the U.S. housing stock. The average household would spend less than $15 annually. Reducing required airflow, e.g. with designs that promote better pollutant capture has more energy saving potential, on average, than improving fan efficiency.

  1. Strain improvement and optimization for β-glucosidase production in Aspergillus niger by low-energy N+ implantation

    International Nuclear Information System (INIS)

    Diao Jinshan; Wang Li; Chen Zhen; Liu Hui; Nie Guangjun; Zheng Zhiming

    2010-01-01

    Low-energy N + implantation was employed to mutate Aspergillus niger Au to enhance productivity of β-glucosidase. Effects of N + on strains, survival and mutation rate were studied. After several rounds of implantation, activity of β-glucosidase of the final mutant Au 0847 reached 13.75 U/mL, which is higher by 106.8% than that of original strain Au, and its heritability was stabilized. Activity of β-glucosidase of Au 0847 reached 30.53 U/mL after further fermentation condition optimization. (authors)

  2. Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Kwok, R.W.M.

    1998-01-01

    SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C + ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers

  3. Metallic artefact reduction with monoenergetic dual-energy CT: systematic ex vivo evaluation of posterior spinal fusion implants from various vendors and different spine levels

    Energy Technology Data Exchange (ETDEWEB)

    Guggenberger, R.; Winklhofer, S.; Andreisek, G.; Alkadhi, H.; Stolzmann, P. [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Osterhoff, G.; Wanner, G.A. [University Hospital Zurich, Department of Surgery, Division of Trauma Surgery, Zurich (Switzerland); Fortunati, M. [The Spine Center, Thun (Switzerland)

    2012-11-15

    To evaluate optimal monoenergetic dual-energy computed tomography (DECT) settings for artefact reduction of posterior spinal fusion implants of various vendors and spine levels. Posterior spinal fusion implants of five vendors for cervical, thoracic and lumbar spine were examined ex vivo with single-energy (SE) CT (120 kVp) and DECT (140/100 kVp). Extrapolated monoenergetic DECT images at 64, 69, 88, 105 keV and individually adjusted monoenergy for optimised image quality (OPTkeV) were generated. Two independent radiologists assessed quantitative and qualitative image parameters for each device and spine level. Inter-reader agreements of quantitative and qualitative parameters were high (ICC = 0.81-1.00, {kappa} = 0.54-0.77). HU values of spinal fusion implants were significantly different among vendors (P < 0.001), spine levels (P < 0.01) and among SECT, monoenergetic DECT of 64, 69, 88, 105 keV and OPTkeV (P < 0.01). Image quality was significantly (P < 0.001) different between datasets and improved with higher monoenergies of DECT compared with SECT (V = 0.58, P < 0.001). Artefacts decreased significantly (V = 0.51, P < 0.001) at higher monoenergies. OPTkeV values ranged from 123-141 keV. OPTkeV according to vendor and spine level are presented herein. Monoenergetic DECT provides significantly better image quality and less metallic artefacts from implants than SECT. Use of individual keV values for vendor and spine level is recommended. (orig.)

  4. Energy-Efficient Algorithm for Sensor Networks with Non-Uniform Maximum Transmission Range

    Directory of Open Access Journals (Sweden)

    Yimin Yu

    2011-06-01

    Full Text Available In wireless sensor networks (WSNs, the energy hole problem is a key factor affecting the network lifetime. In a circular multi-hop sensor network (modeled as concentric coronas, the optimal transmission ranges of all coronas can effectively improve network lifetime. In this paper, we investigate WSNs with non-uniform maximum transmission ranges, where sensor nodes deployed in different regions may differ in their maximum transmission range. Then, we propose an Energy-efficient algorithm for Non-uniform Maximum Transmission range (ENMT, which can search approximate optimal transmission ranges of all coronas in order to prolong network lifetime. Furthermore, the simulation results indicate that ENMT performs better than other algorithms.

  5. Range-separated density-functional theory for molecular excitation energies

    International Nuclear Information System (INIS)

    Rebolini, E.

    2014-01-01

    Linear-response time-dependent density-functional theory (TDDFT) is nowadays a method of choice to compute molecular excitation energies. However, within the usual adiabatic semi-local approximations, it is not able to describe properly Rydberg, charge-transfer or multiple excitations. Range separation of the electronic interaction allows one to mix rigorously density-functional methods at short range and wave function or Green's function methods at long range. When applied to the exchange functional, it already corrects most of these deficiencies but multiple excitations remain absent as they need a frequency-dependent kernel. In this thesis, the effects of range separation are first assessed on the excitation energies of a partially-interacting system in an analytic and numerical study in order to provide guidelines for future developments of range-separated methods for excitation energy calculations. It is then applied on the exchange and correlation TDDFT kernels in a single-determinant approximation in which the long-range part of the correlation kernel vanishes. A long-range frequency-dependent second-order correlation kernel is then derived from the Bethe-Salpeter equation and added perturbatively to the range-separated TDDFT kernel in order to take into account the effects of double excitations. (author)

  6. Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium

    International Nuclear Information System (INIS)

    Barfoot, K.M.; Webb, R.P.; Donnelly, S.E.

    1984-01-01

    Development of topography in thin (55.5 μg cm -2 ) self-supporting aluminium films, caused by high fluence (approx. 10 17 ions cm -2 ) irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV 4 He + ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium. (author)

  7. Prediction of the metabolizable energy requirements of free-range laying hens.

    Science.gov (United States)

    Brainer, M M A; Rabello, C B V; Santos, M J B; Lopes, C C; Ludke, J V; Silva, J H V; Lima, R A

    2016-01-01

    This experiment was conducted with the aim of estimating the ME requirements of free-range laying hens for maintenance, weight gain, and egg production. These experiments were performed to develop an energy requirement prediction equation by using the comparative slaughter technique and the total excreta collection method. Regression equations were used to relate the energy intake, the energy retained in the body and eggs, and the heat production of the hens. These relationships were used to determine the daily ME requirement for maintenance, the efficiency energy utilization above the requirements for maintenance, and the NE requirement for maintenance. The requirement for weight gain was estimated from the energy content of the carcass, and the diet's efficiency energy utilization was determined from the weight gain, which was measured during weekly slaughter. The requirement for egg production was estimated by considering the energy content of the eggs and the efficiency of energy deposition in the eggs. The requirement and efficiency energy utilization for maintenance were 121.8 kcal ME/(kg∙d)and 0.68, respectively. Similarly, the NE requirement for maintenance was 82.4 kcal ME/(kg∙d), and the efficiency energy utilization above maintenance was 0.61. Because the carcass body weight and energy did not increase during the trial, the weight gain could not be estimated. The requirements for egg production requirement and efficiency energy utilization for egg production were 2.48 kcal/g and 0.61, respectively. The following energy prediction equation for free-range laying hens (without weight gain) was developed: ME /(hen ∙ d) = 121.8 × W + 2.48 × EM, in which W = body weight (kg) and EM = egg mass (g/[hen ∙ d]).

  8. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Manuaba, A. E-mail: manu@rmki.kfki.hu; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I

    2001-06-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of {sup 15}N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10{sup 16} ions/cm{sup 2} the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10{sup 16} ions/cm{sup 2} flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of {approx}0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed.

  9. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    International Nuclear Information System (INIS)

    Manuaba, A.; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I.

    2001-01-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of 15 N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10 16 ions/cm 2 the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10 16 ions/cm 2 flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of ∼0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed

  10. Gamma-ray astronomy in the medium energy (10-50 MeV) range

    International Nuclear Information System (INIS)

    Kniffen, D.A.; Bertsch, D.L.; Palmeira, R.A.R.; Rao, K.R.

    1977-01-01

    Gamma-ray astronomy in the medium energy (10-50 MeV) range can provide unique information with which to study many astrophysical problems. Observations in the 10-50 MeV range provide the cleanest window with which to view the isotropic diffuse component of the radiation and to study the possible cosmological implications of the spectrum. For the study of compact sources, this is the important region between the X-ray sky and the vastly different γ-ray sky seen by SAS-2 and COS-B. To understand the implications of medium energy γ-ray astronomy to the study of the galactic diffuse γ-radiation, the model developed to explain the high energy γ-ray observations of SAS-2 is extended to the medium energy range. This work illustrates the importance of medium energy γ-ray astronomy for studying the electromagnetic component of the galactic cosmic rays. To observe the medium energy component of the intense galactic center γ-ray emission, two balloon flights of a medium energy γ-ray spark chamber telescope were flown in Brazil in 1975. These results indicate the emission is higher than previously thought and above the predictions of the theoretical model

  11. Energy System Expectations for Nuclear in the 21. Century: A Plausible Range

    International Nuclear Information System (INIS)

    Langlois, Lucille M.; McDonald, Alan; Rogner, Hans-Holger; Vera, Ivan

    2002-01-01

    This paper outlines a range of scenarios describing what the world's energy system might look like in the middle of the century, and what nuclear energy's most profitable role might be. The starting point is the 40 non-greenhouse-gas-mitigation scenarios in the Special Report on Emissions Scenarios (SRES) of the Intergovernmental Panel on Climate Change (IPCC, 2000). Given their international authorship and comprehensive review by governments and scientific experts, the SRES scenarios are the state of the art in long-term energy scenarios. However, they do not present the underlying energy system structures in enough detail for specific energy technology and infrastructure analyses. This paper therefore describes initial steps within INPRO (The International Project on Innovative Nuclear Reactors and Fuel Cycles of the International Atomic Energy Agency) to translate the SRES results into a range of possible nuclear energy technology requirements for mid-century. The paper summarizes the four SRES scenarios that will be used in INPRO and the reasons for their selection. It provides illustrative examples of the sort of additional detail that is being developed about the overall energy system implied by each scenario, and about specific scenario features particularly relevant to nuclear energy. As recommended in SRES, the selected scenarios cover all four SRES 'story-line families'. The energy system translations being developed in INPRO are intended to indicate how energy services may be provided in mid-century and to delineate likely technology and infrastructure implications. They will indicate answers to questions like the following. The list is illustrative, not comprehensive. - What kind of nuclear power plants will best fit the mid-century energy system? - What energy forms and other products and services provided by nuclear reactors will best fit the mid-century energy system? - What would be their market shares? - How difficult will it be to site new nuclear

  12. Range of impingement-free abduction and adduction deficit after reverse shoulder arthroplasty. Hierarchy of surgical and implant-design-related factors.

    Science.gov (United States)

    Gutiérrez, Sergio; Comiskey, Charles A; Luo, Zong-Ping; Pupello, Derek R; Frankle, Mark A

    2008-12-01

    Evaluations of functional outcomes of reverse shoulder arthroplasty have revealed variable improvements in the range of motion and high rates of scapular notching. The purpose of this study was to systematically examine the impact of surgical factors (location of the glenosphere on the glenoid and tilt angle of the glenosphere on the glenoid) and implant-related factors (implant size, center-of-rotation offset, and humeral neck-shaft angle) on impingement-free abduction motion. A computer model was developed to virtually simulate abduction/adduction motion and its dependence on five surgical and implant-related factors. Three conditions were tested for each factor, resulting in a total of 243 simulated combinations. The overall motion was determined from 0 degrees of abduction until maximum abduction, which would be limited by impingement of the humerosocket on the scapula. In those combinations in which 0 degrees of abduction could not be achieved, the adduction deficit was recorded. The largest average increase in the range of impingement-free abduction motion resulted from a more lateral center-of-rotation offset: the average increase was 31.9 degrees with a change in the center-of-rotation offset from 0 to 10 mm, and this change resulted in an increase in abduction motion in eighty of the eighty-one combinations. The position of the glenosphere on the glenoid was associated with the second largest average increase in abduction motion (28.1 degrees when the glenosphere position was changed from superior to inferior, with the change resulting in an increase in seventy-one of the eighty-one combinations). These factors were followed by glenosphere tilt, humeral neck-shaft angle, and prosthetic size in terms of their effects on abduction motion. The largest effect in terms of avoiding an adduction deficit was provided by a humeral neck-shaft angle of 130 degrees (the deficit was avoided in forty-nine of the eighty-one combinations in which this angle was used

  13. Correlation between room temperature luminescence and energy-transfer in Er–Au co-implanted silica

    Energy Technology Data Exchange (ETDEWEB)

    Cesca, T., E-mail: tiziana.cesca@unipd.it [Department of Physics and Astronomy and CNISM, via Marzolo 8, I-35131 Padova, University of Padova (Italy); Kalinic, B.; Maurizio, C.; Scian, C. [Department of Physics and Astronomy and CNISM, via Marzolo 8, I-35131 Padova, University of Padova (Italy); Trave, E.; Battaglin, G. [Department of Molecular Sciences and Nanosystems, Dorsoduro 2137, I-30123 Venice, Ca’ Foscari University of Venice (Italy); Mazzoldi, P.; Mattei, G. [Department of Physics and Astronomy and CNISM, via Marzolo 8, I-35131 Padova, University of Padova (Italy)

    2015-11-01

    We report on the room temperature photoluminescence characterization in the visible and near-infrared range of Er–Au co-implanted silica systems as a function of the annealing temperature. Besides the characteristic Er{sup 3+} emission at 1540 nm, the samples exhibit luminescence bands in the wavelength region 600–1400 nm related to the formation of ultra-small Au{sub N} aggregates with a number of atoms N less than 50 atoms. In particular, the correlation between such Au{sub N}-related luminescence and the enhancement of the Er{sup 3+} emission was investigated and an anti-correlation between the Er{sup 3+} luminescence at 1540 nm and an Au{sub N}-related band at 980 nm was revealed that represents a possible path for the energy-transfer from Au{sub N} nanoclusters to Er{sup 3+} ions, giving rise to the Er{sup 3+} sensitized emission.

  14. Analysis for mass distribution of proton-induced reactions in intermediate energy range

    CERN Document Server

    Xiao Yu Heng

    2002-01-01

    The mass and charge distribution of residual products produced in the spallation reactions needs to be studied, because it can provide useful information for the disposal of nuclear waste and residual radioactivity generated by the spallation neutron target system. In present work, the Many State Dynamical Model (MSDM) is based on the Cascade-Exciton Model (CEM). The authors use it to investigate the mass distribution of Nb, Au and Pb proton-induced reactions in energy range from 100 MeV to 3 GeV. The agreement between the MSDM simulations and the measured data is good in this energy range, and deviations mainly show up in the mass range of 90 - 150 for the high energy proton incident upon Au and Pb

  15. Investigation of the neutron-proton-interaction in the energy range from 20 to 50 MEV

    International Nuclear Information System (INIS)

    Wilczynski, J.

    1984-07-01

    In the framework of the investigation of the isospin singlet part of the nucleon-nucleon-interaction in the energy range below 100 MeV two experiments were conducted, which were selected by sensitivity calculations. At the Karlsruhe polarized neutron facility POLKA the analyzing powers Asub(y) and Asub(yy) of the elastic n vector-p- and n vector-p vector-scattering were measured in the energy range from 20 to 50 MeV. The results of this epxeriment are compared to older data. In the energy range from 20 to 50 MeV the new data were analyzed together with other selected data of the nucleon-nucleon-system in phase shift analyses. The knowledge of the isospin singlet phase shifts 1 P 1 and 3 D 3 was improved by the new data. (orig./HSI) [de

  16. Combined production of free-range pigs and energy crops – animal behaviour and crop damages

    DEFF Research Database (Denmark)

    Horsted, Klaus; Kongsted, Anne Grete; Jørgensen, Uffe

    2012-01-01

    Intensive free-range pig production on open grasslands has disadvantages in that it creates nutrient hotspots and little opportunity for pigs to seek shelter from the sun. Combining a perennial energy crop and pig production might benefit the environment and animal welfare because perennial energy...... crops like willow (Salix sp.) and Miscanthus offer the pigs protection from the sun while reducing nutrient leaching from pig excrements due to their deep rooting system. The objectives of this study were to evaluate how season and stocking density of pigs in a free-range system with zones of willow...

  17. The Breeding of a Pigment Mutant Strain of Steroid Hydroxylation Aspergillus Flavus by Low Energy Ion Implantation

    International Nuclear Information System (INIS)

    Ye Hui; Ma Jingming; Feng Chun; Cheng Ying; Zhu Suwen; Cheng Beijiu

    2009-01-01

    In the process of the fermentation of steroid C 11 α-hydroxylgenation strain Aspergillus flavus AF-ANo208, a red pigment is derived, which will affect the isolation and purification of the target product. Low energy ion beam implantation is a new tool for breeding excellent mutant strains. In this study, the ion beam implantation experiments were performed by infusing two different ions: argon ion (Ar + ) and nitrogen ion (N + ). The results showed that the optimal ion implantation was N + with an optimum dose of 2.08 x 10 15 ions/cm 2 , with which the mutant strain AF-ANm16 that produced no red pigment was obtained. The strain had high genetic stability and kept the strong capacity of C11α-hydroxylgenation, which could be utilized in industrial fermentation. The differences between the original strain and the mutant strain at a molecular level were analyzed by randomly amplified polymorphic DNA (RAPD). The results indicated that the frequency of variation was 7.00%, which would establish the basis of application investigation into the breeding of pigment mutant strains by low energy ion implantation. (ion beam bioengineering)

  18. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  19. Harnessing Big-Data for Estimating the Energy Consumption and Driving Range of Electric Vehicles

    DEFF Research Database (Denmark)

    Fetene, Gebeyehu Manie; Prato, Carlo Giacomo; Kaplan, Sigal

    -effects econometrics model used in this paper predicts that the energy saving speed of driving is between 45 and 56 km/h. In addition to the contribution to the literature about energy efficiency of electric vehicles, the findings from this study enlightens consumers to choose appropriate cars that suit their travel......This study analyses the driving range and investigates the factors affecting the energy consumption rate of fully-battery electric vehicles under real-world driving patterns accounting for weather condition, drivers’ characteristics, and road characteristics. Four data sources are used: (i) up...

  20. Search for solar Axion Like Particles in the low energy range at CAST

    International Nuclear Information System (INIS)

    Cantatore, G.; Karuza, M.; Lozza, V.; Raiteri, G.

    2010-01-01

    Axion Like Particles (ALPs) could be continuously produced in the Sun via the Primakoff process. The ALP flux could be seen on Earth by observing the photons produced by the ALP decay. The expected energy distribution of reconverted photons is peaked at 3 keV. There could be, however, a low energy tail due to various processes active in the Sun. We report results of the first test measurements in the low energy range performed at CAST along with a description of the experimental setup. Future detector developments are discussed and preliminary results on a liquid nitrogen cooled Avalanche Photodiode are presented.

  1. Study of low energy hydrogen ion implantation effects in silicon: electric properties

    International Nuclear Information System (INIS)

    Barhdadi, A.

    1985-07-01

    Several analysis methods have been developed: hydrogen distribution analysis by nuclear reaction, crystal disorder evaluation by R.B.S., chemical impurities identification by SIMS, optical measurements, electrical characterization of surface barriers, deep level spectroscopy DLTS, ... All these analyses have been made after implantation then after thermal annealing. A model explaining the effect of implantation then after thermal annealing. A model explaining the effect of implanted hydrogen is proposed, the implantation creates an important quantity of defects in a thin layer near the surface; a chemical attack removes them. In Schottky devices, this layer has a basic role on carrier transport phenomena. Other results are given, some of them allow to give an account of the passivation by hydrogen implantation [fr

  2. Wear life of sputtered MoSx films extended by high energy ion implantation

    International Nuclear Information System (INIS)

    Okazaki, Yasufumi; Fujiura, Hideo; Nishimura, Makoto

    2000-01-01

    The tribological characteristics of sputtered MoSx films have been reportedly improved by inert gas ion implantation. We tried to extend their wear life by introducing indium, carbon and gallium ion implantation. Pin-on-disk testers were used to measure friction coefficient and wear life in a vacuum, dry and humid air. Comparing with the unimplanted films, we found that the indium ion implanted films showed marked improvement in wear life in a vacuum. Carbon ion implanted films showed improvement in wear life in high humid air. Implantation was effective when it was conducted with maximum concentration at the interface between film and substrate rather than at the neighborhood of the interface inside a film. (author)

  3. Mid-range adiabatic wireless energy transfer via a mediator coil

    International Nuclear Information System (INIS)

    Rangelov, A.A.; Vitanov, N.V.

    2012-01-01

    A technique for efficient mid-range wireless energy transfer between two coils via a mediator coil is proposed. By varying the coil frequencies, three resonances are created: emitter–mediator (EM), mediator–receiver (MR) and emitter–receiver (ER). If the frequency sweeps are adiabatic and such that the EM resonance precedes the MR resonance, the energy flows sequentially along the chain emitter–mediator–receiver. If the MR resonance precedes the EM resonance, then the energy flows directly from the emitter to the receiver via the ER resonance; then the losses from the mediator are suppressed. This technique is robust against noise, resonant constraints and external interferences. - Highlights: ► Efficient and robust mid-range wireless energy transfer via a mediator coil. ► The adiabatic energy transfer is analogous to adiabatic passage in quantum optics. ► Wireless energy transfer is insensitive to any resonant constraints. ► Wireless energy transfer is insensitive to noise in the neighborhood of the coils.

  4. Excitation energies from Görling-Levy perturbation theory along the range-separated adiabatic connection

    Science.gov (United States)

    Rebolini, Elisa; Teale, Andrew M.; Helgaker, Trygve; Savin, Andreas; Toulouse, Julien

    2018-06-01

    A Görling-Levy (GL)-based perturbation theory along the range-separated adiabatic connection is assessed for the calculation of electronic excitation energies. In comparison with the Rayleigh-Schrödinger (RS)-based perturbation theory this GL-based perturbation theory keeps the ground-state density constant at each order and thus gives the correct ionisation energy at each order. Excitation energies up to first order in the perturbation have been calculated numerically for the helium and beryllium atoms and the hydrogen molecule without introducing any density-functional approximations. In comparison with the RS-based perturbation theory, the present GL-based perturbation theory gives much more accurate excitation energies for Rydberg states but similar excitation energies for valence states.

  5. Long-Range Energy Propagation in Nanometer Arrays of Light Harvesting Antenna Complexes

    NARCIS (Netherlands)

    Escalantet, Maryana; Escalante Marun, M.; Lenferink, Aufrid T.M.; Zhao, Yiping; Tas, Niels Roelof; Huskens, Jurriaan; Hunter, C. Neil; Subramaniam, Vinod; Otto, Cornelis

    2010-01-01

    Here we report the first observation of long-range transport of excitation energy within a biomimetic molecular nanoarray constructed from LH2 antenna complexes from Rhodobacter sphaeroides. Fluorescence microscopy of the emission of light after local excitation with a diffraction-limited light beam

  6. Daily energy expenditure in free-ranging Gopher Tortoises (Gopherus polyphemus)

    NARCIS (Netherlands)

    Jodice, PGR; Epperson, DM; Visser, GH

    2006-01-01

    Studies of ecological energetics in chelonians are rare. Here, we report the first measurements of daily energy expenditure (DEE) and water influx rates (WIRS) in free-ranging adult Gopher Tortoises (Gopherus polyphemus). We used the doubly labeled water (DLW) method to measure DEE in six adult

  7. Prospects for bioenergy use in Ghana using Long-range Energy Alternatives Planning model

    DEFF Research Database (Denmark)

    Kemausuor, Francis; Nygaard, Ivan; Mackenzie, Gordon A.

    2015-01-01

    biomass sources, through the production of biogas, liquid biofuels and electricity. Analysis was based on moderate and high use of bioenergy for transportation, electricity generation and residential fuel using the LEAP (Long-range Energy Alternatives Planning) model. Results obtained indicate...

  8. The effect of implant design and bone quality on insertion torque, resonance frequency analysis, and insertion energy during implant placement in low or low- to medium-density bone.

    Science.gov (United States)

    Wang, Tong-Mei; Lee, Ming-Shu; Wang, Juo-Song; Lin, Li-Deh

    2015-01-01

    This study investigated the effect of implant design and bone quality on insertion torque (IT), implant stability quotient (ISQ), and insertion energy (IE) by monitoring the continuous change in IT and ISQ while implants were inserted in artificial bone blocks that simulate bone of poor or poor-to-medium quality. Polyurethane foam blocks (Sawbones) of 0.16 g/cm³ and 0.32 g/cm³ were respectively used to simulate low density and low- to medium-density cancellous bone. In addition, some test blocks were laminated with a 1-mm 0.80 g/cm³ polyurethane layer to simulate cancellous bone with a thin cortical layer. Four different implants (Nobel Biocare Mk III-3.75, Mk III-4.0, Mk IV-4.0, and NobelActive-4.3) were placed into the different test blocks in accordance with the manufacturer's instructions. The IT and ISQ were recorded at every 0.5-mm of inserted length during implant insertion, and IE was calculated from the torque curve. The peak IT (PIT), final IT (FIT), IE, and final ISQ values were statistically analyzed. All implants showed increasing ISQ values when the implant was inserted more deeply. In contrast to the ISQ, implants with different designs showed dissimilar IT curve patterns during the insertion. All implants showed a significant increase in the PIT, FIT, IE, and ISQ when the test-block density increased or when the 1-mm laminated layer was present. Tapered implants showed FIT or PIT values of more than 40 Ncm for all of the laminated test blocks and for the nonlaminated test blocks of low to medium density. Parallel-wall implants did not exhibit PIT or FIT values of more than 40 Ncm for all of the test blocks. NobelActive-4.3 showed a significantly higher FIT, but a significantly lower IE, than Mk IV-4.0. While the existence of cortical bone or implant designs significantly affects the dynamic IT profiles during implant insertion, it does not affect the ISQ to a similar extent. Certain implant designs are more suitable than others if high IT is

  9. Prospects for bioenergy use in Ghana using Long-range Energy Alternatives Planning model

    International Nuclear Information System (INIS)

    Kemausuor, Francis; Nygaard, Ivan; Mackenzie, Gordon

    2015-01-01

    As Ghana's economy grows, the choice of future energy paths and policies in the coming years will have a significant influence on its energy security. A Renewable Energy Act approved in 2011 seeks to encourage the influx of renewable energy sources in Ghana's energy mix. The new legal framework combined with increasing demand for energy has created an opportunity for dramatic changes in the way energy is generated in Ghana. However, the impending changes and their implication remain uncertain. This paper examines the extent to which future energy scenarios in Ghana could rely on energy from biomass sources, through the production of biogas, liquid biofuels and electricity. Analysis was based on moderate and high use of bioenergy for transportation, electricity generation and residential fuel using the LEAP (Long-range Energy Alternatives Planning) model. Results obtained indicate that introducing bioenergy to the energy mix could reduce GHG (greenhouse gas) emissions by about 6 million tonnes CO_2e by 2030, equivalent to a 14% reduction in a business-as-usual scenario. This paper advocates the use of second generation ethanol for transport, to the extent that it is economically exploitable. Resorting to first generation ethanol would require the allocation of over 580,000 ha of agricultural land for ethanol production. - Highlights: • This paper examines modern bioenergy contribution to Ghana's future energy mix. • Three scenarios are developed and analysed. • Opportunities exist for modern bioenergy to replace carbon intensive fuels. • Introducing modern bioenergy to the mix could result in a 14% reduction in GHG.

  10. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    International Nuclear Information System (INIS)

    Esposito, M.; Waltham, C.; Allinson, N.M.; Anaxagoras, T.; Evans, P.M.; Poludniowski, G.; Green, S.; Parker, D.J.; Price, T.; Manolopoulos, S.; Nieto-Camero, J.

    2015-01-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs

  11. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography.

    Science.gov (United States)

    Esposito, M; Anaxagoras, T; Evans, P M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Poludniowski, G; Price, T; Waltham, C; Allinson, N M

    2015-06-03

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  12. Autonomous Vehicles Have a Wide Range of Possible Energy Impacts (Poster)

    Energy Technology Data Exchange (ETDEWEB)

    Brown, A.; Repac, B.; Gonder, J.

    2013-07-01

    This poster presents initial estimates of the net energy impacts of automated vehicles (AVs). Automated vehicle technologies are increasingly recognized as having potential to decrease carbon dioxide emissions and petroleum consumption through mechanisms such as improved efficiency, better routing, lower traffic congestion, and by enabling advanced technologies. However, some effects of AVs could conceivably increase fuel consumption through possible effects such as longer distances traveled, increased use of transportation by underserved groups, and increased travel speeds. The net effect on petroleum use and climate change is still uncertain. To make an aggregate system estimate, we first collect best estimates for the energy impacts of approximately ten effects of AVs. We then use a modified Kaya Identity approach to estimate the range of aggregate effects and avoid double counting. We find that depending on numerous factors, there is a wide range of potential energy impacts. Adoption of automated personal or shared vehicles can lead to significant fuel savings but has potential for backfire.

  13. Long-range Coulomb interactions in low energy (e,2e) data

    International Nuclear Information System (INIS)

    Waterhouse, D.

    2000-01-01

    Full text: Proper treatment of long-range Coulomb interactions has confounded atomic collision theory since Schrodinger first presented a quantum-mechanical model for atomic interactions. The long-range Coulomb interactions are difficult to include in models in a way that treats the interaction sufficiently well but at the same time ensures the calculation remains tractable. An innovative application of an existing multi-parameter (e,2e) data acquisition system will be described. To clarify the effects of long-range Coulomb interactions, we will report the correlations and interactions that occur at low energy, observed by studying the energy sharing between outgoing electrons in the electron-impact ionisation of krypton

  14. Darwin: Dose monitoring system applicable to various radiations with wide energy ranges

    International Nuclear Information System (INIS)

    Sato, T.; Satoh, D.; Endo, A.; Yamaguchi, Y.

    2007-01-01

    A new radiation dose monitor, designated as DARWIN (Dose monitoring system Applicable to various Radiations with Wide energy ranges), has been developed for real-time monitoring of doses in workspaces and surrounding environments of high-energy accelerator facilities. DARWIN is composed of a Phoswitch-type scintillation detector, which consists of liquid organic scintillator BC501A coupled with ZnS(Ag) scintillation sheets doped with 6 Li, and a data acquisition system based on a Digital-Storage-Oscilloscope. DARWIN has the following features: (1) capable of monitoring doses from neutrons, photons and muons with energies from thermal energy to 1 GeV, 150 keV to 100 MeV and 1 MeV to 100 GeV, respectively, (2) highly sensitive with precision and (3) easy to operate with a simple graphical user-interface. The performance of DARWIN was examined experimentally in several radiation fields. The results of the experiments indicated the accuracy and wide response range of DARWIN for measuring dose rates from neutrons, photons and muons with wide energies. It was also found from the experiments that DARWIN enables us to monitor small fluctuations of neutron dose rates near the background level because of its high sensitivity. With these properties, DARWIN will be able to play a very important role for improving radiation safety in high-energy accelerator facilities. (authors)

  15. Optical effects of ion implantation

    International Nuclear Information System (INIS)

    Townsend, P.D.

    1987-01-01

    The review concerns the effects of ion implantation that specifically relate to the optical properties of insulators. Topics which are reviewed include: ion implantation, ion range and damage distributions, colour centre production by ion implantation, high dose ion implantation, and applications for integrated optics. Numerous examples are presented of both diagnostic and industrial examples of ion implantation effects in insulators. (U.K.)

  16. Research on ion implantation in MEMS device fabrication by theory, simulation and experiments

    Science.gov (United States)

    Bai, Minyu; Zhao, Yulong; Jiao, Binbin; Zhu, Lingjian; Zhang, Guodong; Wang, Lei

    2018-06-01

    Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

  17. Formation and surface strengthening of nano-meter embedded phases during high energy Ti implanted and annealed steel

    International Nuclear Information System (INIS)

    Zhang Tonghe; Wu Yuguang; Cui Ping; Wang Ping

    1999-12-01

    Observation of transmission electron microscope indicated that the phase of FeTi 2 with 3.5-20 nm in diameter is embedded in high energy Ti implanted layer. It's average diameter is 8 nm. The nano-meter phases were embedded among dislocations and grain boundary in Ti implanted steel at 400 degree C. The wear resistance has been improved. The embedded structure can be changed obviously after annealing. The structure has been changed slightly after annealing at annealing temperature raging from 350 to 500 degree C, however, the hardness and wear resistance of implanted layer increased greatly. The maximum of hardness is obtained when the sample was annealed at 500 degree C for 20 min. It can be seen that the strengthening of implanted layer has enhanced by annealing indeed. The grain boundary and dislocations have disappeared; the diameter of nano-meter phases increased from 10 nm to 15 nm after annealing at temperature of 750 degree C and 1000 degree respectively. The average densities of nano-meter phases are 8.8 x 10 10 /cm 2 and 6.5 x 10 10 /cm 2 respectively for both of annealing temperature. The hardness decreased obviously when the annealing temperature is greater than 750 degree C

  18. Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

    Science.gov (United States)

    Wei, Ye; Sang, Shengbo; Zhou, Bing; Deng, Xiao; Chai, Jing; Ji, Jianlong; Ge, Yang; Huo, Yuanliang; Zhang, Wendong

    2017-09-01

    Carbon cluster ion implantation is an important technique in fabricating functional devices at micro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting-edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behavior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency (IE) is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices’ properties. Project supported by the National Natural Science Foundation of China (Nos. 51622507, 61471255, 61474079, 61403273, 51502193, 51205273), the Natural Science Foundation of Shanxi (Nos. 201601D021057, 201603D421035), the Youth Foundation Project of Shanxi Province (Nos. 2015021097), the Doctoral Fund of MOE of China (No. 20131402110013), the National High Technology Research and Development Program of China (No. 2015AA042601), and the Specialized Project in Public Welfare from The Ministry of Water Resources of China (Nos. 1261530110110).

  19. Variable energy positron beam study of Xe-implanted uranium oxide

    International Nuclear Information System (INIS)

    Djourelov, Nikolay; Marchand, Benoît; Marinov, Hristo; Moncoffre, Nathalie; Pipon, Yves; Nédélec, Patrick; Toulhoat, Nelly; Sillou, Daniel

    2013-01-01

    Doppler broadening of annihilation gamma-line combined with a slow positron beam was used to measure the momentum density distribution of annihilating pair in a set of sintered UO 2 samples. The influence of surface polishing, of implantation with 800-keV 136 Xe 2+ at fluences of 1 × 10 15 and 1 × 10 16 Xe cm −2 , and of annealing were studied by following the changes of the momentum distribution shape by means of S and W parameters. The program used for this purpose was VEPFIT. At the two fluences in the stoichiometric as-implanted UO 2 , formation of Xe bubbles was not detected. The post-implantation annealing and over-stoichiometry in the as-implanted sample caused Xe precipitation and formation of Xe bubbles.

  20. The Raman effects in γ-LiAlO2 induced by low-energy Ga ion implantation

    Science.gov (United States)

    Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Wang, Tie-Jun; Yu, Xiao-Fei; Wang, Xue-Lin

    2017-10-01

    The tetragonal γ-LiAlO2 crystal, known as a promising solid breeding material in future fusion reactors, has attracted much attention for its irradiation effects. This work focused on the Raman effects in ion-implanted γ-LiAlO2. Ga ions of 30, 80 and 150 keV were implanted on the z-cut γ-LiAlO2 sample surfaces at a fluence of 1 × 1014 ions/cm2 or 1 × 1015 ions/cm2. The average ion range varied from 230 to 910 Å. The Raman spectra were collected from the implanted surfaces before and after the implantation. Evident changes were reflected in the Raman modes intensities, with abnormal increments for the most detected modes. According to the assignments of Raman modes, the Al-O vibration was enhanced to a greater extent than the Li-Al-O vibration, and the LiO4-AlO4 vibration gained a lesser enhancement. The discussion, including the factors of roughness, crystalline disorder and influence by Ga ions, attempts to explain the increments of Raman intensity.

  1. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  2. Short-range second order screened exchange correction to RPA correlation energies

    Science.gov (United States)

    Beuerle, Matthias; Ochsenfeld, Christian

    2017-11-01

    Direct random phase approximation (RPA) correlation energies have become increasingly popular as a post-Kohn-Sham correction, due to significant improvements over DFT calculations for properties such as long-range dispersion effects, which are problematic in conventional density functional theory. On the other hand, RPA still has various weaknesses, such as unsatisfactory results for non-isogyric processes. This can in parts be attributed to the self-correlation present in RPA correlation energies, leading to significant self-interaction errors. Therefore a variety of schemes have been devised to include exchange in the calculation of RPA correlation energies in order to correct this shortcoming. One of the most popular RPA plus exchange schemes is the second order screened exchange (SOSEX) correction. RPA + SOSEX delivers more accurate absolute correlation energies and also improves upon RPA for non-isogyric processes. On the other hand, RPA + SOSEX barrier heights are worse than those obtained from plain RPA calculations. To combine the benefits of RPA correlation energies and the SOSEX correction, we introduce a short-range RPA + SOSEX correction. Proof of concept calculations and benchmarks showing the advantages of our method are presented.

  3. Physics of ep collisions in the TeV energy range

    International Nuclear Information System (INIS)

    Altarelli, G.; Mele, B.; Rueckl, R.

    1984-01-01

    We study the physics of electron-proton collisions in the range of centre-of-mass energies between √s approx.= 0.3 TeV (HERA) and √s approx.= (1-2) TeV. The latter energies would be achieved if the electron or positron beam of LEP [Esub(e) approx.= (50-100) GeV] is made to collide with the proton beam of LHC [Esub(p) approx.= (5-10) TeV]. (orig.)

  4. Using the probability method for multigroup calculations of reactor cells in a thermal energy range

    International Nuclear Information System (INIS)

    Rubin, I.E.; Pustoshilova, V.S.

    1984-01-01

    The possibility of using the transmission probability method with performance inerpolation for determining spatial-energy neutron flux distribution in cells of thermal heterogeneous reactors is considered. The results of multigroup calculations of several uranium-water plane and cylindrical cells with different fuel enrichment in a thermal energy range are given. A high accuracy of results is obtained with low computer time consumption. The use of the transmission probability method is particularly reasonable in algorithms of the programmes compiled computer with significant reserve of internal memory

  5. CGC/saturation approach for soft interactions at high energy: long range rapidity correlations

    International Nuclear Information System (INIS)

    Gotsman, E.; Maor, U.; Levin, E.

    2015-01-01

    In this paper we continue our program to construct a model for high energy soft interactions that is based on the CGC/saturation approach. The main result of this paper is that we have discovered a mechanism that leads to large long range rapidity correlations and results in large values of the correlation function R(y 1 , y 2 ) ≥ 1, which is independent of y 1 and y 2 . Such a behavior of the correlation function provides strong support for the idea that at high energies the system of partons that is produced is not only dense but also has strong attractive forces acting between the partons. (orig.)

  6. Evaluation of corrosion resistance of implant-use Ti-Zr binary alloys with a range of compositions.

    Science.gov (United States)

    Akimoto, Teisuke; Ueno, Takeshi; Tsutsumi, Yusuke; Doi, Hisashi; Hanawa, Takao; Wakabayashi, Noriyuki

    2018-01-01

    Although titanium-zirconium (Ti-Zr) alloy has been adopted for clinical applications, the ideal proportion of Zr in the alloy has not been identified. In this study, we investigated the biocompatibility of Ti-Zr alloy by evaluating its corrosion resistance to better understand whether there is an optimal range or value of Zr proportion in the alloy. We prepared pure Ti, Ti-30Zr, Ti-50Zr, Ti-70Zr, and pure Zr (mol% of Zr) samples and subjected them to anodic polarization and immersion tests in a lactic acid + sodium chloride (NaCl) solution and artificial saliva. We observed pitting corrosion in the Ti-70Zr and Zr after exposure to both solutions. After the immersion test, we found that pure Ti exhibited the greatest degree of dissolution in the lactic acid + NaCl solution, with the addition of Zr dramatically reducing Ti ion dissolution, with the reduction ultimately exceeding 90% in the case of the Ti-30Zr. Hence, although the localized corrosion resistance under severe conditions was compromised when the Zr content was more than 70%, metal ion release reduced owing to Zr addition and the corresponding formation of a stable passive layer. The results suggest that Ti-30Zr or a Zr proportion of less than 50% would offer an ideal level of corrosion resistance for clinical applications. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 106B: 73-79, 2018. © 2016 Wiley Periodicals, Inc.

  7. 3He(α, γ7Be cross section in a wide energy range

    Directory of Open Access Journals (Sweden)

    Szücs Tamás

    2017-01-01

    Full Text Available The reaction rate of the 3He(α,γ7 Be reaction is important both in the Big Bang Nucleosynthesis (BBN and in the Solar hydrogen burning. There have been a lot of experimental and theoretical efforts to determine this reaction rate with high precision. Some long standing issues have been solved by the more precise investigations, like the different S(0 values predicted by the activation and in-beam measurement. However, the recent, more detailed astrophysical model predictions require the reaction rate with even higher precision to unravel new issues like the Solar composition. One way to increase the precision is to provide a comprehensive dataset in a wide energy range, extending the experimental cross section database of this reaction. This paper presents a new cross section measurement between Ecm = 2.5 − 4.4 MeV, in an energy range which extends above the 7Be proton separation threshold.

  8. Development of dose monitoring system applicable to various radiations with wide energy ranges

    International Nuclear Information System (INIS)

    Sato, Tatsuhiko; Satoh, Daiki; Endo, Akira

    2006-01-01

    A new radiation dose monitor, designated as DARWIN (Dose monitoring system Applicable to various Radiations with WIde energy raNges), has been developed for real-time monitoring of doses in workspaces and surrounding environments of high energy accelerator facilities. DARWIN is composed of a phoswitch-type scintillation detector, which consists of liquid organic scintillator BC501A coupled with ZnS(Ag) scintillation sheets doped with 6 Li, and a data acquisition system based on a Digital-Storage-Oscilloscope. DARWIN has the following features: (1) capable of monitoring doses from neutrons, photons and muons with energies from thermal energy to 1 GeV, 150 keV to 100 MeV, and 1 MeV to 100 GeV, respectively, (2) highly sensitive with precision, and (3) easy to operate with a simple graphical user-interface. The performance of DARWIN was examined experimentally in several radiation fields. The results of the experiments indicated the accuracy and rapid response of DARWIN for measuring dose rates from neutrons, photons and muons with wide energies. With these properties, we conclude that DARWIN will be able to play a very important role for improving radiation safety in high energy accelerator facilities. (author)

  9. An Energy-Efficient Link with Adaptive Transmit Power Control for Long Range Networks

    DEFF Research Database (Denmark)

    Lynggaard, P.; Blaszczyk, Tomasz

    2016-01-01

    A considerable amount of research is carried out to develop a reliable smart sensor system with high energy efficiency for battery operated wireless IoT devices in the agriculture sector. However, only a limited amount of research has covered automatic transmission power adjustment schemes...... and algorithms which are essential for deployment of wireless IoT nodes. This paper presents an adaptive link algorithm for farm applications with emphasis on power adjustment for long range communication networks....

  10. Energy of N two-dimensional bosons with zero-range interactions

    Science.gov (United States)

    Bazak, B.; Petrov, D. S.

    2018-02-01

    We derive an integral equation describing N two-dimensional bosons with zero-range interactions and solve it for the ground state energy B N by applying a stochastic diffusion Monte Carlo scheme for up to 26 particles. We confirm and go beyond the scaling B N ∝ 8.567 N predicted by Hammer and Son (2004 Phys. Rev. Lett. 93 250408) in the large-N limit.

  11. Energy- and time-resolved detection of prompt gamma-rays for proton range verification.

    Science.gov (United States)

    Verburg, Joost M; Riley, Kent; Bortfeld, Thomas; Seco, Joao

    2013-10-21

    In this work, we present experimental results of a novel prompt gamma-ray detector for proton beam range verification. The detection system features an actively shielded cerium-doped lanthanum(III) bromide scintillator, coupled to a digital data acquisition system. The acquisition was synchronized to the cyclotron radio frequency to separate the prompt gamma-ray signals from the later-arriving neutron-induced background. We designed the detector to provide a high energy resolution and an effective reduction of background events, enabling discrete proton-induced prompt gamma lines to be resolved. Measuring discrete prompt gamma lines has several benefits for range verification. As the discrete energies correspond to specific nuclear transitions, the magnitudes of the different gamma lines have unique correlations with the proton energy and can be directly related to nuclear reaction cross sections. The quantification of discrete gamma lines also enables elemental analysis of tissue in the beam path, providing a better prediction of prompt gamma-ray yields. We present the results of experiments in which a water phantom was irradiated with proton pencil-beams in a clinical proton therapy gantry. A slit collimator was used to collimate the prompt gamma-rays, and measurements were performed at 27 positions along the path of proton beams with ranges of 9, 16 and 23 g cm(-2) in water. The magnitudes of discrete gamma lines at 4.44, 5.2 and 6.13 MeV were quantified. The prompt gamma lines were found to be clearly resolved in dimensions of energy and time, and had a reproducible correlation with the proton depth-dose curve. We conclude that the measurement of discrete prompt gamma-rays for in vivo range verification of clinical proton beams is feasible, and plan to further study methods and detector designs for clinical use.

  12. Long-range energy transfer in self-assembled quantum dot-DNA cascades

    Science.gov (United States)

    Goodman, Samuel M.; Siu, Albert; Singh, Vivek; Nagpal, Prashant

    2015-11-01

    The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films.The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient

  13. Daily energy expenditure in free-ranging Gopher Tortoises (Gopherus polyphemus)

    Science.gov (United States)

    Jodice, P.G.R.; Epperson, D.M.; Visser, G. Henk

    2006-01-01

    Studies of ecological energetics in chelonians are rare. Here, we report the first measurements of daily energy expenditure (DEE) and water influx rates (WIRs) in free-ranging adult Gopher Tortoises (Gopherus polyphemus). We used the doubly labeled water (DLW) method to measure DEE in six adult tortoises during the non-breeding season in south-central Mississippi, USA. Tortoise DEE ranged from 76.7-187.5 kj/day and WIR ranged from 30.6-93.1 ml H2O/day. Daily energy expenditure did not differ between the sexes, but DEE was positively related to body mass. Water influx rates varied with the interaction of sex and body mass. We used a log/log regression model to assess the allometric relationship between DEE and body mass for Gopher Tortoises, Desert Tortoises (Gopherus agassizii), and Box Turtles (Terrapene carolina), the only chelonians for which DEE has been measured. The slope of this allometric model (0.626) was less than that previously calculated for herbivorous reptiles (0.813), suggesting that chelonians may expend energy at a slower rate per unit of body mass compared to other herbivorous reptiles. We used retrospective power analyses and data from the DLW isotope analyses to develop guidelines for sample sizes and duration of measurement intervals, respectively, for larger-scale energetic studies in this species. ?? 2006 by the American Society of Ichthyologists and Herpetologists.

  14. Determination of personnel exposures in the lower energy ranges of X-ray by photographic dosimeter

    International Nuclear Information System (INIS)

    Ha, C.W.; Kim, J.R.; Suk, K.W.

    1986-01-01

    This paper described an improved technical method required for proper evaluation of personnel exposures by means of the photographic dosimeter developed by KAERI in lower gamma or X-ray energy regions, with which response of the dosimeter varies significantly. With calibration of the dosimeter in the energy range from 30 to 300 keV, the beam spectrum was carefully selected and specified it adequately. The absorber combinations and absorber thickness used to obtain the specified X-ray spectra from a constant potential X-ray machine were determined theoretically and also experimentally. A correlation between the density and exposure for the four separate energies, such as 49 keV eff , 154 keV eff 250 keV eff and 662 keV, is experimentally determined. As a result, it can be directly evaluated the exposure from the measured response of dosimeter. (Author)

  15. Standardization of radiation protection measurements in mixed fields of an extended energy range

    International Nuclear Information System (INIS)

    Hoefert, M.; Stevenson, G.R.

    1977-01-01

    The improved ICRU concept of dose equivalent index aims at standardizing both area and personnel dose measurements so that the results on the dosimetry of external irradiations in radiation protection become compatible. It seems that for photon and neutron energies up to 3 and 20 MeV respectively the realization of dose-equivalent index is straightforward, but the inclusion of higher energies and/or other types of radiation will lead both to conceptual and practical difficulties. It will be shown that practical measurements in mixed radiation fields of an extended energy range for protection purposes will overestimate the standardized quantity. While area measurements can be performed to represent a good approximation, greater uncertainties have to be accepted in personnel dosimetry for stray radiation fields around GeV proton accelerators

  16. Calibration efficiency of HPGe detector in the 50-1800 KeV energy range

    International Nuclear Information System (INIS)

    Venturini, Luzia

    1996-01-01

    This paper describes the efficiency of an HPGe detector in the 50 - 1800 keV energy range, for two geometries for water measurements: Marinelli breaker (850 ml) and a polyethylene flask (100 ml). The experimental data were corrected for the summing effect and fitted to a continuous, differentiable and energy dependent function given by 1n(ε)=b 0 +b 1 .1n(E/E 0 )+ β.1n(E/E 0 ) 2 , where β = b 2 if E>E 0 and β =a 2 if E ≤E 0 ; ε = the full absorption peak efficiency; E is the gamma-ray energy and {b 0 , b 1 , b 2 , a 2 , E 0 } is the parameter set to be fitted. (author)

  17. Photodissociation of HCN and HNC isomers in the 7-10 eV energy range

    Energy Technology Data Exchange (ETDEWEB)

    Chenel, Aurelie; Roncero, Octavio, E-mail: octavio.roncero@csic.es [Instituto de Física Fundamental (IFF-CSIC), C.S.I.C., Serrano 123, 28006 Madrid (Spain); Aguado, Alfredo [Departamento de Química Física Aplicada (UAM), Unidad Asociada a IFF-CSIC, Facultad de Ciencias Módulo 14, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Agúndez, Marcelino; Cernicharo, José [Instituto de Ciencia de Materiales de Madrid, CSIC, C/ Sor Juana Inés de la Cruz 3, 28049 Cantoblanco (Spain)

    2016-04-14

    The ultraviolet photoabsorption spectra of the HCN and HNC isomers have been simulated in the 7-10 eV photon energy range. For this purpose, the three-dimensional adiabatic potential energy surfaces of the 7 lowest electronic states, and the corresponding transition dipole moments, have been calculated, at multireference configuration interaction level. The spectra are calculated with a quantum wave packet method on these adiabatic potential energy surfaces. The spectra for the 3 lower excited states, the dissociative electronic states, correspond essentially to predissociation peaks, most of them through tunneling on the same adiabatic state. The 3 higher electronic states are bound, hereafter electronic bound states, and their spectra consist of delta lines, in the adiabatic approximation. The radiative lifetime towards the ground electronic states of these bound states has been calculated, being longer than 10 ns in all cases, much longer that the characteristic predissociation lifetimes. The spectra of HCN is compared with the available experimental and previous theoretical simulations, while in the case of HNC there are no previous studies to our knowledge. The spectrum for HNC is considerably more intense than that of HCN in the 7-10 eV photon energy range, which points to a higher photodissociation rate for HNC, compared to HCN, in astrophysical environments illuminated by ultraviolet radiation.

  18. Reliable and energy-efficient communications for wireless biomedical implant systems.

    Science.gov (United States)

    Ntouni, Georgia D; Lioumpas, Athanasios S; Nikita, Konstantina S

    2014-11-01

    Implant devices are used to measure biological parameters and transmit their results to remote off-body devices. As implants are characterized by strict requirements on size, reliability, and power consumption, applying the concept of cooperative communications to wireless body area networks offers several benefits. In this paper, we aim to minimize the power consumption of the implant device by utilizing on-body wearable devices, while providing the necessary reliability in terms of outage probability and bit error rate. Taking into account realistic power considerations and wireless propagation environments based on the IEEE P802.l5 channel model, an exact theoretical analysis is conducted for evaluating several communication scenarios with respect to the position of the wearable device and the motion of the human body. The derived closed-form expressions are employed toward minimizing the required transmission power, subject to a minimum quality-of-service requirement. In this way, the complexity and power consumption are transferred from the implant device to the on-body relay, which is an efficient approach since they can be easily replaced, in contrast to the in-body implants.

  19. Intelligent Energy Management Control for Extended Range Electric Vehicles Based on Dynamic Programming and Neural Network

    Directory of Open Access Journals (Sweden)

    Lihe Xi

    2017-11-01

    Full Text Available The extended range electric vehicle (EREV can store much clean energy from the electric grid when it arrives at the charging station with lower battery energy. Consuming minimum gasoline during the trip is a common goal for most energy management controllers. To achieve these objectives, an intelligent energy management controller for EREV based on dynamic programming and neural networks (IEMC_NN is proposed. The power demand split ratio between the extender and battery are optimized by DP, and the control objectives are presented as a cost function. The online controller is trained by neural networks. Three trained controllers, constructing the controller library in IEMC_NN, are obtained from training three typical lengths of the driving cycle. To determine an appropriate NN controller for different driving distance purposes, the selection module in IEMC_NN is developed based on the remaining battery energy and the driving distance to the charging station. Three simulation conditions are adopted to validate the performance of IEMC_NN. They are target driving distance information, known and unknown, changing the destination during the trip. Simulation results using these simulation conditions show that the IEMC_NN had better fuel economy than the charging deplete/charging sustain (CD/CS algorithm. More significantly, with known driving distance information, the battery SOC controlled by IEMC_NN can just reach the lower bound as the EREV arrives at the charging station, which was also feasible when the driver changed the destination during the trip.

  20. Investigation of the sup 9 sup 3 Nb neutron cross-sections in resonance energy range

    CERN Document Server

    Grigoriev, Y V; Faikov-Stanchik, H; Ilchev, G; Kim, G N; Kitaev, V Ya; Mezentseva, Z V; Panteleev, T; Sinitsa, V V; Zhuravlev, B V

    2001-01-01

    The results of gamma-ray multiplicity spectra and transmission measurements for sup 9 sup 3 Nb in energy range 21.5 eV-100 keV are presented. Gamma spectra from 1 to 7 multiplicity were measured on the 501 m and 121 m flight paths of the IBR-30 using a 16-section scintillation detector with a NaI(Tl) crystals of a total volume of 36 l and a 16-section liquid scintillation detector of a total volume of 80 l for metallic samples of 50, 80 mm in diameter and 1, 1.5 mm thickness with 100% sup 9 sup 3 Nb. Besides, the total and scattering cross-section of sup 9 sup 3 Nb were measured by means batteries of B-10 and He-3 counters on the 124 m, 504 m and 1006 m flight paths of the IBR-30. Spectra of multiplicity distribution were obtained for resolved resonances in the energy region E=30-6000 eV and for energy groups in the energy region E=21.5 eV- 100 keV. They were used for determination of the average multiplicity, resonance parameters and capture cross-section in energy groups and for low-laying resonances of sup...

  1. Theoretical photoionization spectra in the UV photon energy range for a Mg-like Al+ ion

    International Nuclear Information System (INIS)

    Kim, Dae-Soung; Kim, Young Soon

    2008-01-01

    In the present work, we report the photoionization cross sections of the Al + ion calculated for the photon energy range 20-26 eV and 30-50 eV. We have expanded our previous calculation (2007 J. Phys. Soc. Japan 76 014302) with an optimized admixture of the initial ground state 3s 21 S and exited states 3s3p 1,3 P, 3s3d 1,3 D and 3s4s 1,3 S, and obtained significantly improved predictions for the main background and autoionizing resonance structures of the reported experimental spectra. The absolute measurements of the photoionization cross sections of the Al + ion in these energy ranges have been performed by West et al (2001 Phys. Rev. A 63 052719), and they reported that the prominent peaks around 21 eV were attributed to the effects of the significant influence of the small fraction of the fourth-order radiation with energies around 84 eV from the synchrotron source. In our previous work, the main shape for these cross sections was calculated assuming an admixture of initial 3s 21 S and 3s3p 3 P states, only with a rough overall estimate for the experimental spectra in the photon energy range 20-26 eV, and without these peaks around 21 eV. The report of the experimental assignment attributes these peaks to the excitation of a 2p electron from the core. However, our present results with the new admixture reveal similar peaks without considering the possibility of the core excitation

  2. Frontier applications of rf superconductivity for high energy physics in the TeV range

    International Nuclear Information System (INIS)

    Tigner, M.; Padamsee, H.

    1988-01-01

    The authors present understanding of the fundamental nature of matter is embodied in the standard theory. This theory views all matter as composed of families of quarks and leptons with their interactions mediated by the family of force-carrying particles. Progress in particle accelerators has been a vital element in bringing about this level of understanding. Although the standard theory is successful in relating a wide range of phenomena, it raises deeper questions about the basic nature of matter and energy. Among these are: why are the masses of the various elementary particles and the strengths of the basic forces what they are? It is expected that over the next decade a new generation of accelerators spanning the 100 Gev mass range will shed light on some of these questions. These accelerators, will provide the means to thoroughly explore the energy regime corresponding to the mass scale of the weak interactions to reveal intimate details of the force carrying particles, the weak bosons, Z0 and W+-. Superconducting rf technology will feature in a major way in the electron storage rings. Current theoretical ideas predict that to make further progress towards a more fundamental theory of matter, it will be necessary to penetrate the TeV energy regime. At this scale a whole new range of phenomena will manifest the nature of the symmetry breaking mechanism that must be responsible for the differences they observe in the familiar weak and electromagnetic forces. History has shown that unexpected discoveries made in a new energy regime have proven to be the main engine of progress. The experimental challenge to accelerator designers and builders is clear. 11 references, 3 figures, 1 table

  3. Synthesis of 5'-CMP and 5'-dCMP in aqueous solution induced by low energy ions implantation

    International Nuclear Information System (INIS)

    Shi Huaibin; Shao Chunlin; Wang Xiangqin; Yu Zengliang

    2001-01-01

    Low energy N + ions produced by N 2 are accelerated and then introduced into aqueous solution to induce chemical reactions. This process avoids the need of a vacuum chamber and makes it possible to investigate the actions of low energy ions in aqueous solution. In order to explore prebiotic synthesis of nucleotide via reaction between low energy ions and aqueous solution under the primitive earth conditions, low energy N + is implanted into aqueous solution containing cytosine, D-ribose, D-2-deoxyribose and NH 4 H 2 PO 4 . It is confirmed that 5'-CMP and 5'-dCMP are produced by HPLC and 1 H-NMR analyses. The relation between yields of 5'-CMP and 5'-dCMP and irradiation time has been obtained

  4. The transmission diffraction patterns of silicon implanted with high-energy α-particles

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.

    1995-01-01

    2 mm thick silicon wafers, implanted with 4.8 MeV α-particles are studied by means of transmission section topography and additionally by Lang and double-crystal methods. It was found that all three methods produced a negligible contrast in the symmetric transmission reflection apart from some fragments of the implanted area's boundaries. The interference fringes were observed in the case of asymmetric reflections. The asymmetric section topographs revealed distinct interference fringes, which cannot be explained in terms of simple bicrystal models. In particular, the curvature of these fringes may be interpreted as being due to the change in the implanted ion dose along the beam intersecting the crystal. Some features of the fringe pattern were reproduced by numerical integration of Takagi-Taupin equations. (author)

  5. NEUTRON-PROTON EFFECTIVE RANGE PARAMETERS AND ZERO-ENERGY SHAPE DEPENDENCE.

    Energy Technology Data Exchange (ETDEWEB)

    HACKENBURG, R.W.

    2005-06-01

    A completely model-independent effective range theory fit to available, unpolarized, np scattering data below 3 MeV determines the zero-energy free proton cross section {sigma}{sub 0} = 20.4287 {+-} 0.0078 b, the singlet apparent effective range r{sub s} = 2.754 {+-} 0.018{sub stat} {+-} 0.056{sub syst} fm, and improves the error slightly on the parahydrogen coherent scattering length, a{sub c} = -3.7406 {+-} 0.0010 fm. The triplet and singlet scattering lengths and the triplet mixed effective range are calculated to be a{sub t} = 5.4114 {+-} 0.0015 fm, a{sub s} = -23.7153 {+-} 0.0043 fm, and {rho}{sub t}(0,-{epsilon}{sub t}) = 1.7468 {+-} 0.0019 fm. The model-independent analysis also determines the zero-energy effective ranges by treating them as separate fit parameters without the constraint from the deuteron binding energy {epsilon}{sub t}. These are determined to be {rho}{sub t}(0,0) = 1.705 {+-} 0.023 fm and {rho}{sub s}(0,0) = 2.665 {+-} 0.056 fm. This determination of {rho}{sub t}(0,0) and {rho}{sub s}(0,0) is most sensitive to the sparse data between about 20 and 600 keV, where the correlation between the determined values of {rho}{sub t}(0,0) and {rho}{sub s}(0,0) is at a minimum. This correlation is responsible for the large systematic error in r{sub s}. More precise data in this range are needed. The present data do not event determine (with confidence) that {rho}{sub t}(0,0) {ne} {rho}{sub t}(0, -{epsilon}{sub t}), referred to here as ''zero-energy shape dependence''. The widely used measurement of {sigma}{sub 0} = 20.491 {+-} 0.014 b from W. Dilg, Phys. Rev. C 11, 103 (1975), is argued to be in error.

  6. The interaction between Xe and F in Si (1 0 0) pre-amorphised with 20 keV Xe and implanted with low energy BF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Werner, M. [Joule Physics Laboratory, Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom)]. E-mail: m.werner@pgr.salford.ac.uk; Berg, J.A. van den [Joule Physics Laboratory, Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom); Armour, D.G. [Joule Physics Laboratory, Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom); Carter, G. [Joule Physics Laboratory, Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom); Feudel, T. [AMD Saxony LLC and Co. KG, Wilschdorfer Landstrasse, 101 D-01109 Dresden (Italy); Herden, M. [AMD Saxony LLC and Co. KG, Wilschdorfer Landstrasse, 101 D-01109 Dresden (Italy); Bersani, M. [ITC IRST, 38050 Povo, Trento (Italy); Giubertoni, D. [ITC IRST, 38050 Povo, Trento (Italy); Bailey, P. [CCLRC Daresbury Laboratory, Daresbury WA44A (United Kingdom); Noakes, T.C.Q. [CCLRC Daresbury Laboratory, Daresbury WA44A (United Kingdom)

    2004-12-15

    The pre-amorphisation of Si by Xe{sup +} ions, before source/drain and extension implants, is an attractive alternative to Ge{sup +} or Si{sup +}, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0) samples pre-amorphised with 20 keV Xe{sup +} to a nominal dose of 2E14 cm{sup -2} were implanted with 1 and 3 keV BF{sub 2} {sup +} to doses of 7E14 cm{sup -2}. Samples were annealed at temperatures ranging from 600 to 1130 deg. C and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the BF{sub 2} {sup +} implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF{sub 2} {sup +} implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10% of the F migrates into the bulk and is trapped at the same depth in a {approx}1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.

  7. Experimental investigation of dd reaction in range of ultralow energies using Z-pinch

    International Nuclear Information System (INIS)

    Bystritskij, V.M.; Grebenyuk, V.M.; Parzhitskij, S.S.

    1998-01-01

    Results of the experiments to measure the dd reaction cross section in the range of deuteron collision energies from 0.1 keV to 1.5 keV using Z-pinch technique are presented. The experiment was performed at the Pulsed Ion Beam Accelerator of the High-Current Electronics Institute in Tomsk. The dd fusion neutrons were registered by scintillation detectors using time-of-flight method and BF 3 detectors of thermal neutrons. At 90% confidence level, the upper limits of the neutron producing dd reaction cross sections are obtained for average deuteron collision energies of 0.11, 0.34, 0.37 and 1.46 keV. The results demonstrate that high-intensity pulsed accelerators with a generator current of 2-3 MA allow the dd reaction cross sections to be measured in the range of deuteron collision energies from 0.8 keV to 3 keV

  8. Photoproduction in the Energy Range 70-200 GeV

    CERN Multimedia

    2002-01-01

    This experiment continues the photoproduction studies of WA4 and WA57 up to the higher energies made available by the upgrading of the West Hall. An electron beam of energy 200 GeV is used to produce tagged photons in the range 65-180 GeV; The photon beam is incident on a 60 cm liquid hydrogen target in the Omega Spectrometer. A Ring Image Cherenkov detector provides pion/kaon separation up to 150 GeV/c. The Transition Radiation Detector extends the charged pion identification to the momentum range from about 80 GeV/c upwards. The large lead/liquid scintillator calorimeter built by the WA70 collaboration and the new lead/scintillating fibre det (Plug) are used for the detection of the $\\gamma$ rays produced by the interactions of the primary photons in the hydrogen target. \\\\ \\\\ The aim is to make a survey of photoproduction reactions up to photon energies of 200 GeV. The large aperture of the Omega Spectrometer will particularly enable study of fragmentation of the photon to states of high mass, up to @C 9 G...

  9. Development of dose monitoring system applicable to various radiations with wide energy ranges

    International Nuclear Information System (INIS)

    Sato, Tatsuhiko; Satoh, Daiki; Endo, Akira; Yamaguchi, Yasuhiro

    2005-01-01

    A new inventive radiation dose monitor, designated as DARWIN (Dose monitoring system Applicable to various Radiations with WIde energy raNges), has been developed for monitoring doses in workspaces and surrounding environments of high energy accelerator facilities. DARWIN is composed of a phoswitch-type scintillation detector, which consists of liquid organic scintillator BC501A coupled with ZnS(Ag) scintillation sheets doped with 6 Li, and a data acquisition system based on a Digital-Storage-Oscilloscope. Scintillations from the detector induced by thermal and fast neutrons, photons and muons were discriminated by analyzing their waveforms, and their light outputs were directly converted into the corresponding doses by applying the G-function method. Characteristics of DARWIN were studied by both calculation and experiment. The calculated results indicate that DARWIN gives reasonable estimations of doses in most radiation fields. It was found from the experiment that DARWIN has an excellent property of measuring doses from all particles that significantly contribute to the doses in surrounding environments of accelerator facilities - neutron, photon and muon with wide energy ranges. The experimental results also suggested that DARWIN enables us to monitor small fluctuation of neutron dose rates near the background-level owing to its high sensitivity. (author)

  10. Low energy range dielectronic recombination of Fluorine-like Fe17+ at the CSRm

    Science.gov (United States)

    Khan, Nadir; Huang, Zhong-Kui; Wen, Wei-Qiang; Mahmood, Sultan; Dou, Li-Jun; Wang, Shu-Xing; Xu, Xin; Wang, Han-Bing; Chen, Chong-Yang; Chuai, Xiao-Ya; Zhu, Xiao-Long; Zhao, Dong-Mei; Mao, Li-Jun; Li, Jie; Yin, Da-Yu; Yang, Jian-Cheng; Yuan, You-Jin; Zhu, Lin-Fan; Ma, Xin-Wen

    2018-05-01

    The accuracy of dielectronic recombination (DR) data for astrophysics related ions plays a key role in astrophysical plasma modeling. The absolute DR rate coefficient of Fe17+ ions was measured at the main cooler storage ring at the Institute of Modern Physics, Lanzhou, China. The experimental electron-ion collision energy range covers the first Rydberg series up to n = 24 for the DR resonances associated with the {}2P1/2\\to {}2P3/2{{Δ }}n=0 core excitations. A theoretical calculation was performed by using FAC code and compared with the measured DR rate coefficient. Overall reasonable agreement was found between the experimental results and calculations. Moreover, the plasma rate coefficient was deduced from the experimental DR rate coefficient and compared with the available results from the literature. At the low energy range, significant discrepancies were found, and the measured resonances challenge state-of-the-art theory at low collision energies. Supported by the National Key R&D Program of China (2017YFA0402300), the National Natural Science Foundation of China through (11320101003, U1732133, 11611530684) and Key Research Program of Frontier Sciences, CAS (QYZDY-SSW-SLH006)

  11. Assessment of the effects of laser photobiomodulation on peri-implant bone repair through energy dispersive x-ray fluorescence: A study of dogs

    Science.gov (United States)

    Menezes, R. F.; Araújo, N. C.; Carneiro, V. S. M.; Moreno, L. M.; Guerra, L. A. P.; Santos Neto, A. P.; Gerbi, M. E. M.

    2016-03-01

    Bone neoformation is essential in the osteointegration of implants and has been correlated with the repair capacity of tissues, the blood supply and the function of the cells involved. Laser therapy accelerates the mechanical imbrication of peri-implant tissue by increasing osteoblastic activity and inducing ATP, osteopontin and the expression of sialoproteins. Objective: The aim of the present study was to assess peri-implant bone repair using the tibia of dogs that received dental implants and laser irradiation (AsGaAl 830nm - 40mW, CW, f~0.3mm) through Energy Dispersive X-ray Fluorescence (EDXRF). Methodology: Two groups were established: G1 (Control, n=20; two dental implants were made in the tibia of each animal; 10 animals); G2 (Experimental, n=20, two dental implants were made in the tibia each animal + Laser therapy; 10 animals). G2 was irradiated every 48 hours for two weeks, with a total of seven sessions. The first irradiation was conducted during the surgery, at which time a point in the surgical alveolus was irradiated prior to the placement of the implant and four new spatial positions were created to the North, South, East and West (NSEW) of the implant. The subsequent sessions involved irradiation at these four points and at one infra-implant point (in the direction of the implant apex). Each point received 4J/cm2 and a total dose of 20J/cm2 per session (treatment dose=140J/cm2). The specimens were removed 15 and 30 days after the operation for the EDXRF test. The Mann- Whitney statistical test was used to assess the results. Results: The increase in the calcium concentration in the periimplant region of the irradiated specimens (G2) was statistically significant (p repair in the peri-implant region.

  12. Endothelial cell adhesion to ion implanted polymers

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Y; Kusakabe, M [SONY Corp., Tokyo (Japan); Lee, J S; Kaibara, M; Iwaki, M; Sasabe, H [RIKEN (Inst. of Physical and Chemical Research), Saitama (Japan)

    1992-03-01

    The biocompatibility of ion implanted polymers has been studied by means of adhesion measurements of bovine aorta endothelial cells in vitro. The specimens used were polystyrene (PS) and segmented polyurethane (SPU). Na{sup +}, N{sub 2}{sup +}, O{sub 2}{sup +} and Kr{sup +} ion implantations were performed at an energy of 150 keV with fluences ranging from 1x10{sup 15} to 3x10{sup 17} ions/cm{sup 2} at room temperature. The chemical and physical structures of ion-implanted polymers have been investigated in order to analyze their tissue compatibility such as improvement of endothelial cell adhesion. The ion implanted SPU have been found to exhibit remarkably higher adhesion and spreading of endothelial cells than unimplanted specimens. By contrast, ion implanted PS demonstrated a little improvement of adhesion of cells in this assay. Results of FT-IR-ATR showed that ion implantation broke the original chemical bond to form new radicals such as OH, ....C=O, SiH and condensed rings. The results of Raman spectroscopy showed that ion implantation always produced a peak near 1500 cm{sup -1}, which indicated that these ion implanted PS and SPU had the same carbon structure. This structure is considered to bring the dramatic increase in the extent of cell adhesion and spreading to these ion implanted PS and SPU. (orig.).

  13. Investigation of the 93Nb neutron cross-sections in resonance energy range

    International Nuclear Information System (INIS)

    Grigoriev, Yu.V.; Kitaev, V.Ya.; Zhuravlev, B.V.; Sinitsa, V.V.; Borzakov, S.B.; Faikov-Stanchik, H.; Ilchev, G.; Mezentseva, Zh.V.; Panteleev, Ts.Ts.; Kim, G.N.

    2002-01-01

    The results of gamma-ray multiplicity spectra and transmission measurements for 93 Nb in energy range 21.5 eV-100 keV are presented. Gamma spectra from 1 to 7 multiplicity were measured on the 501 m and 121 m flight paths of the IBR-30 using a 16-section scintillation detector with a NaI(Tl) crystals of a total volume of 36 l and a 16-section liquid scintillation detector of a total volume of 80 l for metallic samples of 50, 80 mm in diameter and 1, 1.5 mm thickness with 100% 93 Nb. Besides, the total and scattering cross-section of 93 Nb were measured by means batteries of B-10 and He-3 counters on the 124 m, 504 m and 1006 m flight paths of the IBR-30. Spectra of multiplicity distribution were obtained for resolved resonances in the energy region E=30-6000 eV and for energy groups in the energy region E=21.5 eV- 100 keV. They were used for determination of the average multiplicity, resonance parameters and capture cross-section in energy groups and for low-laying resonances of 93 Nb. Standard capture cross-sections of 238 U and experimental gamma-ray multiplicity spectra were also used for determination of capture cross section 93 Nb in energy groups. Similar values were calculated using the ENDF/B-6 and JENDL-3 evaluated data libraries with the help of the GRUKON computer program. Within the limits of experimental errors there is observed an agreement between the experiment and calculation, but in some groups the experimental values differ from the calculated ones. (author)

  14. Higher Energy Intake Variability as Predisposition to Obesity: Novel Approach Using Interquartile Range.

    Science.gov (United States)

    Forejt, Martin; Brázdová, Zuzana Derflerová; Novák, Jan; Zlámal, Filip; Forbelská, Marie; Bienert, Petr; Mořkovská, Petra; Zavřelová, Miroslava; Pohořalá, Aneta; Jurášková, Miluše; Salah, Nabil; Bienertová-Vašků, Julie

    2017-12-01

    It is known that total energy intake and its distribution during the day influences human anthropometric characteristics. However, possible association between variability in total energy intake and obesity has thus far remained unexamined. This study was designed to establish the influence of energy intake variability of each daily meal on the anthropometric characteristics of obesity. A total of 521 individuals of Czech Caucasian origin aged 16–73 years (390 women and 131 men) were included in the study, 7-day food records were completed by all study subjects and selected anthropometric characteristics were measured. The interquartile range (IQR) of energy intake was assessed individually for each meal of the day (as a marker of energy intake variability) and subsequently correlated with body mass index (BMI), body fat percentage (%BF), waist-hip ratio (WHR), and waist circumference (cW). Four distinct models were created using multiple logistic regression analysis and backward stepwise logistic regression. The most precise results, based on the area under the curve (AUC), were observed in case of the %BF model (AUC=0.895) and cW model (AUC=0.839). According to the %BF model, age (p<0.001) and IQR-lunch (p<0.05) seem to play an important prediction role for obesity. Likewise, according to the cW model, age (p<0.001), IQR-breakfast (p<0.05) and IQR-dinner (p <0.05) predispose patients to the development of obesity. The results of our study show that higher variability in the energy intake of key daily meals may increase the likelihood of obesity development. Based on the obtained results, it is necessary to emphasize the regularity in meals intake for maintaining proper body composition. Copyright© by the National Institute of Public Health, Prague 2017

  15. Effects of non-implantation factors on survival rate of microbe irradiated by low-energy N+

    International Nuclear Information System (INIS)

    Yang Tianyou; Chen Linhai; Qin Guangyong; Li Zongwei; Su Mingjie; Wang Yanping; Chang Shenghe; Huo Yuping; Li Zongyi

    2006-01-01

    The effects of non-implantation factors, such as drying, vacuum and the staying time of the E.coli LE392 culture, on survival rate of E.coli LE392 were studied when E.coli LE392 was irradiated by the low-energy N + . The results show that the survival rate of E.coli LE392 does not reduce steadily all the time but rapidly drops sometime during drying. The survival rate of E.coli LE392 declines sharply as the samples are placed in vacuum, then falls in distinctively with increasing of time. the tolerance of E.coli LE392 towards vacuum increasingly strengthens when the E.coli LE392 culture is placed at room temperature. Preparing the culture in batchs can ensure the consistency of the irradiated samples and avoid errors caused by the inconsistent samples. When the non-implantation factors are controlled, E.coli is implanted by 30 kev N + of 1 x 10 14 cm -2 and 3 x 10 15 cm -2 , respectively. And the results show no difference in the E.coli's survival rates between batchs at the same dose. (authors)

  16. Finishing broiler toms using an estradiol 17 beta implant together with a high energy-low protein final feed.

    Science.gov (United States)

    Moran, E T; Etches, R J

    1983-06-01

    Wrolstad Small White toms were implanted with 10 mg of estradiol 17 beta monopalmitate (EMP) at 8 weeks of age. Common corn-soybean meal feeds were given through to 12 weeks, then one-half the birds from control and EMP groups received either an adequate (16% protein, 3166 kcal ME/kg) or high energy-low protein (HE-LP, 12%, 3373 kcal) feed to 14 weeks. No differences in weight gain and feed conversion occurred between EMP and control treatments at 12 weeks but at 14 weeks when the HE-LP diet had been fed the implanted birds performed better than controls. The HE-LP feed led to body weights and feed efficiencies below that of toms given adequate diet. In all cases, EMP elicited male secondary sex characteristics rather than feminization. Processing losses were increased with EMP and when the HE-LP feed had been given. Both treatments also improved finish assessment and were additive to the extent that a substantial increase in grade occurred. Effects on carcass composition, yield of commercial cuts, and cooking loss were small. Implantation, reduced meat yield percentage of breast and thigh. The increase in grade advantage from combining EMP with a feed that forced fat deposition more than compensated for the adverse effects.

  17. Scintillation Response of CaF2 to H and He over a Continuous Energy Range

    International Nuclear Information System (INIS)

    Zhang, Yanwen; Xiang, Xia; Weber, William J.

    2008-01-01

    Recent demands for new radiation detector materials with improved γ-ray detection performance at room temperature have prompted research efforts on both accelerated material discovery and efficient techniques that can be used to identify material properties relevant to detector performance. New material discovery has been limited due to the difficulties of large crystal growth to completely absorb γ-energies; whereas high-quality thin films or small crystals of candidate materials can be readily produced by various modern growth techniques. In this work, an ion-scintillator technique is demonstrated that can be applied to study scintillation properties of thin films and small crystals. The scintillation response of a benchmark scintillator, europium-doped calcium fluoride (CaF2:Eu), to energetic proton and helium ions is studied using the ion-scintillator approach based on a time of flight (TOF) telescope. Excellent energy resolution and fast response of the TOF telescope allow quantitative measurement of light yield, nonlinearity and energy resolution over an energy range from a few tens to a few thousands of keV

  18. The anisotropy of cosmic ray particles in the energy range 1011-1019 eV

    International Nuclear Information System (INIS)

    Xu Chunxian

    1985-01-01

    A study of the anisotropy of primary cosmic ray is presented. The expression of the anisotropy is derived in a model of statistical discrete sources in an infinite galaxy. Using these derived formulas, the amplitudes of the first harmonic anisotropies caused by eleven supernovea nearby the Earth are estimated individually and the trend of the resultant anisotropy is investigated. It is found that the expected results can account for the power law of Esup(0.5) of the anisotropy above the energy 5 x 10 15 eV. The Compton-getting effect can cause an additional anisotropy which is independent of energy and added to the resultant anisotropy of these discrete sources. It is apparent that the anisotropies available in the low energy range 10 11 - 10 14 eV are caused by the Compton-Getting effect. Taking the differential spectrum index γ = 2.67 measured in the same energy bound we get the streaming velocity of 35 km/s with respect to the cosmic ray background

  19. Actinide data in the thermal energy range - International Evaluation Co-operation Volume 3

    International Nuclear Information System (INIS)

    Tellier, Henri; Weigmann, H.; Sowerby, M.; Mattes, Margarete; Matsunobu, Hiroyuki; Tsuchihashi, Keichiro; Halsall, M.J.; Weston, L.; Deruytter, A.J.

    1994-01-01

    A Working Party on International Evaluation Co-operation was established under the sponsorship of the OECD/NEA Nuclear Science Committee (NSC) to promote the exchange of information on nuclear data evaluations, validation, and related topics. Its aim is also to provide a framework for co-operative activities between members of the major nuclear data evaluation projects. This includes the possible exchange of scientists in order to encourage co-operation. Requirements for experimental data resulting from this activity are compiled. The Working Party determines common criteria for evaluated nuclear data files with a view to assessing and improving the quality and completeness of evaluated data. The Parties to the project are: ENDF (United States), JEFF/EFF (NEA Data Bank Member countries), and JENDL (Japan). Co-operation with evaluation projects of non-OECD countries are organised through the Nuclear Data Section of the International Atomic Energy Agency (IAEA). This report was issued by a Subgroup investigating actinide data in the thermal energy range. Thermal nuclear constants for the primary actinides have been extensively studies, but the most recent evaluations are not in full agreement with thermal reactor calculations. The objective of the Subgroup was to identify the origin of these differences and to reassess the recent evaluations. A considerable effort was devoted to the η of U-235, where analysis of lattice temperature coefficient measurements has suggested an energy dependent shape below thermal energy

  20. An absolute measurement of 252Cf prompt fission neutron spectrum at low energy range

    International Nuclear Information System (INIS)

    Lajtai, A.; Dyachenko, P.P.; Kutzaeva, L.S.; Kononov, V.N.; Androsenko, P.A.; Androsenko, A.A.

    1983-01-01

    Prompt neutron energy spectrum at low energies (25 keV 252 Cf spontaneous fission has been measured with a time-of-flight technique on a 30 cm flight-path. Ionization chamber and lithium-glass were used as fission fragment and neutron detectors, respectively. Lithium glasses of NE-912 (containing 6 Li) and of NE-913 (containing 7 Li) 45 mm in diameter and 9.5 mm in thickness have been employed alternatively, for the registration of fission neutrons and gammas. For the correct determination of the multiscattering effects - the main difficulty of the low energy neutron spectrum measurements - a special geometry for the neutron detector was used. Special attention was paid also to the determination of the absolute efficiency of the neutron detector. The real response function of the spectrometer was determined by a Monte-Carlo calculation. The scattering material content of the ionization chamber containing a 252 Cf source was minimized. As a result of this measurement a prompt fission neutron spectrum of Maxwell type with a T=1.42 MeV parameter was obtained at this low energy range. We did not find any neutron excess or irregularities over the Maxwellian. (author)

  1. CGC/saturation approach for soft interactions at high energy: long range rapidity correlations

    Energy Technology Data Exchange (ETDEWEB)

    Gotsman, E.; Maor, U. [Tel Aviv University, Department of Particle Physics, School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Science, Tel Aviv (Israel); Levin, E. [Tel Aviv University, Department of Particle Physics, School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Science, Tel Aviv (Israel); Universidad Tecnica Federico Santa Maria and Centro Cientifico- Tecnologico de Valparaiso, Departemento de Fisica, Valparaiso (Chile)

    2015-11-15

    In this paper we continue our program to construct a model for high energy soft interactions that is based on the CGC/saturation approach. The main result of this paper is that we have discovered a mechanism that leads to large long range rapidity correlations and results in large values of the correlation function R(y{sub 1}, y{sub 2}) ≥ 1, which is independent of y{sub 1} and y{sub 2}. Such a behavior of the correlation function provides strong support for the idea that at high energies the system of partons that is produced is not only dense but also has strong attractive forces acting between the partons. (orig.)

  2. Electron response of some low-Z scintillators in wide energy range

    International Nuclear Information System (INIS)

    Swiderski, L; Marcinkowski, R; Moszynski, M; Czarnacki, W; Szawlowski, M; Szczesniak, T; Pausch, G; Plettner, C; Roemer, K

    2012-01-01

    Light yield nonproportionality and the intrinsic resolution of some low atomic number scintillators were studied by means of the Wide Angle Compton Coincidence (WACC) technique. The plastic and liquid scintillator response to Compton electrons was measured in the energy range of 10 keV up to 4 MeV, whereas a CaF 2 :Eu sample was scanned from 3 keV up to 1 MeV. The nonproportionality of the CaF 2 :Eu light yield has characteristics typical for inorganic scintillators of the multivalent halides group, whereas tested organic scintillators show steeply increasing nonproportionality without saturation point. This is in contrast to the behavior of all known inorganic scintillators having their nonproportionality curves at saturation above energies between tens and several hundred keV.

  3. Electron response of some low-Z scintillators in wide energy range

    Science.gov (United States)

    Swiderski, L.; Marcinkowski, R.; Moszynski, M.; Czarnacki, W.; Szawlowski, M.; Szczesniak, T.; Pausch, G.; Plettner, C.; Roemer, K.

    2012-06-01

    Light yield nonproportionality and the intrinsic resolution of some low atomic number scintillators were studied by means of the Wide Angle Compton Coincidence (WACC) technique. The plastic and liquid scintillator response to Compton electrons was measured in the energy range of 10 keV up to 4 MeV, whereas a CaF2:Eu sample was scanned from 3 keV up to 1 MeV. The nonproportionality of the CaF2:Eu light yield has characteristics typical for inorganic scintillators of the multivalent halides group, whereas tested organic scintillators show steeply increasing nonproportionality without saturation point. This is in contrast to the behavior of all known inorganic scintillators having their nonproportionality curves at saturation above energies between tens and several hundred keV.

  4. True coincidence summing corrections for an extended energy range HPGe detector

    Energy Technology Data Exchange (ETDEWEB)

    Venegas-Argumedo, Y. [Centro de Investigación en Materiales Avanzados (CIMAV), Miguel de Cervantes 120, Chihuahua, Chih 31109 (Mexico); M.S. Student at CIMAV (Mexico); Montero-Cabrera, M. E., E-mail: elena.montero@cimav.edu.mx [Centro de Investigación en Materiales Avanzados (CIMAV), Miguel de Cervantes 120, Chihuahua, Chih 31109 (Mexico)

    2015-07-23

    True coincidence summing (TCS) effect for natural radioactive families of U-238 and Th-232 represents a problem when an environmental sample with a close source-detector geometry measurement is performed. By using a certified multi-nuclide standard source to calibrate an energy extended range (XtRa) HPGe detector, it is possible to obtain an intensity spectrum slightly affected by the TCS effect with energies from 46 to 1836 keV. In this work, the equations and some other considerations required to calculate the TCS correction factor for isotopes of natural radioactive chains are described. It is projected a validation of the calibration, performed with the IAEA-CU-2006-03 samples (soil and water)

  5. Wettability control of polystyrene by ion implantation

    International Nuclear Information System (INIS)

    Suzuki, Yoshiaki; Kusakabe, Masahiro; Iwaki, Masaya

    1994-01-01

    The permanent effects of ion implantation on the improvement of wettability of polystyrene is investigated in relation to ion species and fluences. The He + , Ne + , Na + , N 2 + , O 2 + , Ar + , K + and Kr + ion implantations were performed at energies of 50 and 150 keV at room temperature. The fluences ranged from 1x10 15 to 1x10 17 ions/cm 2 . The results showed that the contact angle of water for Na + and K + implanted polystyrene decreased from 87 to 0 , as the fluences increased to 1x10 17 ions/cm 2 at an energy of 50 keV. The contact angle for Na + and K + implanted polystyrene did not change under ambient room conditions, even when time elapsed. However, the contact an gle for He + , C + , O + , Ne + , N 2 + , O 2 + , Ar + , and Kr + ion implanted specimens decreased slightly immediately after ion implantation. Results of X-ray photoelectron spectroscopy showed that the increase in the Na content in the surface of Na + implanted specimens were observed with increasing fluence. It is concluded that permanent improvement in wettability was caused by doping effects rather than by radiation effects from Na + and K + ion implantation. ((orig.))

  6. Application of low-energy ionic implantation for creation of geteroepitaxial nanofilms and nanostructures

    International Nuclear Information System (INIS)

    Tashmukhamedova, D.A.; Umirzakov, B.E.; Kurbanov, Kh.Kh.

    2010-01-01

    The optimum regimes of ion-implantation and annealing for obtaining the nanocrystals and nanofilms of metal silicides are determined. For the first time, it is shown that quantum character of silicide nanocrystals appears, when their sizes are less than 25 -30 nm. (authors)

  7. Swimming bath pumps. Ranges of application, selection, installation, energy efficiency; Schwimmbadpumpen. Einsatzbereiche, Auswahl, Aufbau, Energieeffizienz

    Energy Technology Data Exchange (ETDEWEB)

    Korupp, Sascha

    2012-07-01

    The booklet under consideration reports on pumps being used in swimming baths. The range of application of the individual sorts of pump is described. The knowledge on the selection of suitable pumps is given. Subsequently, the design of a pump with the main components, the installation of a pump as well as the most important issues and difficulties of the pump material are illustrated. The total costs of a pump within its life cycle are determined. These life cycle costs can be reduced by propulsion components increasing the energy efficiency such as frequency converter, motors with permanent magnets or heat exchanger motors.

  8. Calculation of Bremsstrahlung radiation of electrons on atoms in wide energy range of photons

    CERN Document Server

    Romanikhin, V P

    2002-01-01

    The complete spectra of the Bremsstrahlung radiation on the krypton atoms within the range of the photon energies of 10-25000 eV and lanthanum near the potential of the 4d-shell ionization is carried out. The atoms summarized polarizability is calculated on the basis of the simple semiclassical approximation of the local electron density and experimental data on the photoabsorption. The comparison with the calculational results is carried out through the method of distorted partial waves (PDWA) for Kr and with the experimental data on La

  9. Possible manifestation of long range forces in high energy hadron collisions

    International Nuclear Information System (INIS)

    Kuraev, Eh.A.; Ferro, P.; Trentadue, L.

    1997-01-01

    Pion-pion and photon-photon scattering are discussed.. We obtain, starting from the impact representation introduced by Cheng and Wu a new contribution to the high energy hadron-hadron scattering amplitude for small transferred momentum q 2 of the form is (q 2 /m 4 )ln(-q 2 /m 2 ). This behaviour may be interpreted as a manifestation of long transverse-range forces between hadrons which, for ρ>> m -1 fall off as ρ -4 . We consider the examples of pion and photon scattering with photons converted in the intermediate state to two pairs of quarks interacting by exchanging two gluon colorless state. A phenomenological approach for proton impact factor is used to analyze proton-proton scattering. The analysis of the lowest order radiative corrections for the case of photon-photon scattering is done. We discuss the possibility of observing the effects of these long range forces

  10. Multilayer out-of-plane overlap electrostatic energy harvesting structure actuated by blood pressure for powering intra-cardiac implants

    Science.gov (United States)

    Deterre, M.; Risquez, S.; Bouthaud, B.; Dal Molin, R.; Woytasik, M.; Lefeuvre, E.

    2013-12-01

    We present an innovative multilayer out-of-plane electrostatic energy harvesting device conceived in view of scavenging energy from regular blood pressure in the heart. This concept involves the use of a deformable packaging for the implant in order to transmit the blood pressure to the electrostatic transducer. As shown in previous work, this is possible by using thin metal micro-bellows structure, providing long term hermeticity and high flexibility. The design of the electrostatic device has overcome several challenges such as the very low frequency of the mechanical excitation (1 to 2 Hz) and the small available room in the medical implant. Analytical and numerical models have been used to maximize the capacitance variation, and hence to optimize the energy conversion. We have theoretically shown that a 25-layer transducer with 6-mm diameter and 1-mm thickness could harvest at least 20 mJ per heart beat in the left ventricle under a maximum voltage of 75 V. These results show that the proposed concept is promising and could power the next generation of leadless pacemakers.

  11. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  12. Greenhouse gas mitigation potential of biomass energy technologies in Vietnam using the long range energy alternative planning system model

    International Nuclear Information System (INIS)

    Kumar, Amit; Bhattacharya, S.C.; Pham, H.L.

    2003-01-01

    The greenhouse gas (GHG) mitigation potentials of number of selected Biomass Energy Technologies (BETs) have been assessed in Vietnam. These include Biomass Integrated Gasification Combined Cycle (BIGCC) based on wood and bagasse, direct combustion plants based on wood, co-firing power plants and Stirling engine based on wood and cooking stoves. Using the Long-range Energy Alternative Planning (LEAP) model, different scenarios were considered, namely the base case with no mitigation options, replacement of kerosene and liquefied petroleum gas (LPG) by biogas stove, substitution of gasoline by ethanol in transport sector, replacement of coal by wood as fuel in industrial boilers, electricity generation with biomass energy technologies and an integrated scenario including all the options together. Substitution of coal stoves by biogas stove has positive abatement cost, as the cost of wood in Vietnam is higher than coal. Replacement of kerosene and LPG cookstoves by biomass stove also has a positive abatement cost. Replacement of gasoline by ethanol can be realized after a few years, as at present the cost of ethanol is more than the cost of gasoline. The replacement of coal by biomass in industrial boiler is also not an attractive option as wood is more expensive than coal in Vietnam. The substitution of fossil fuel fired plants by packages of BETs has a negative abatement cost. This option, if implemented, would result in mitigation of 10.83 million tonnes (Mt) of CO 2 in 2010

  13. Microhardness of boron, titanium, and nitrogen implanted steel

    International Nuclear Information System (INIS)

    Sowa, M.; Szyszko, W.; Sielanko, J.; Glusiec, L.

    1989-01-01

    Mechanically polished steel (1H18N9T) and (15GTM) samples are implanted with boron, titanium, and nitrogen ions, with dose ranging from 10 16 to 10 17 ions/cm 2 . The implantation energy varied from 100 to 250 keV. Implanted samples are heat-treated at 400 to 800 0 C in vacuum. The microhardness of implanted samples is measured by using a Hanneman tester with loads ranging from 2 to 40 g. The influence of annealing temperature on microhardness of the implanted layers is determined. The diffusion of boron from the implanted layers is also investigated by using the secondary ion mass spectrometer. The diffusion coefficients of boron in steel are determined. (author)

  14. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L

    2001-05-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO{sub 2} layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

  15. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    International Nuclear Information System (INIS)

    Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L.

    2001-01-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO 2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing

  16. Transport properties of gaseous ions over a wide energy range, IV

    International Nuclear Information System (INIS)

    Viehland, L.A.; Mason, E.A.

    1995-01-01

    This paper updates three previous papers entitled open-quotes Transport Properties of Gaseous Ions over a Wide Energy Range.close quotes. These papers referred to as Parts I, II, and III, were by H.W.Ellis, P.Y. Pai, E.W. McDaniel, E.A. Mason, and L.A. Viehland, S.L. Lin, M.G. Thackston. Part IV contains compilations of experimental data on ionic mobilities and diffusion coefficients (both longitudinal and transverse) for ions in neutral gases in an externally applied electrostatic field, at various gas temperatures; the data are tabulated as a function of the ionic energy parameter E/N, where E is the electric field strength and N is the number density of the neutral gas. Part IV also contains a locator key to ionic mobilities and diffusion coefficients compiled in Parts I-IV. The coverage of the literature extends into 1994. The criteria for selection of the data are; (1) the measurements must cover a reasonably wide range of E/N; (2) the identity of the ions must be well established; and (3) the accuracy of the data must be good. 26 refs., 6 tabs

  17. Range-energy relations and stopping powers of organic liquids and vapours for alpha particles

    International Nuclear Information System (INIS)

    Akhavan-Rezayat, A.; Palmer, R.B.J.

    1980-01-01

    Experimental range-energy relations are presented for alpha particles in methyl alcohol, propyl alcohol, dichloromethane, chloroform and carbon tetrachloride in both the liquid and vapour phases. Stopping power values for these materials and for oxygen gas over the energy range 1.0-8.0 MeV are also given. From these results stopping powers have been derived for the -CH 2 -group and for -Cl occurring in chemical combination in the liquid and vapour phases. The molecular stopping power in the vapour phase is shown to exceed that in the liquid phase by 2-6% below 2 MeV, reducing to negligible differences at about 5 MeV for the materials directly investigated and for the -Cl atom. No significant phase effect is observed for the -CH 2 -group, but it is noted that the uncertainties in the values of the derived stopping powers are much greater in this case. Comparison of the experimental molecular stopping powers with values calculated from elemental values using the Bragg additivity rule shows agreement for vapours but not for liquids. (author)

  18. Investigation of the 232Th neutron cross-sections in resonance energy range

    International Nuclear Information System (INIS)

    Grigoriev, Yu.V.; Kitaev, V.Ya.; Sinitsa, V.V.; Zhuravlev, B.V.; Borzakov, S.B.; Faikov-Stanchik, H.; Ilchev, G.L.; Panteleev, Ts.Ts.; Kim, G.N.

    2001-01-01

    The alternative path in the development of atomic energy is the uranium-thorium cycle. In connection with this, the measurements of the 232 Th neutron capture and total cross-sections and its resonance self-shielding coefficients in resonance energy range are necessary because of their low accuracy. In this work, the results of the investigations of the thorium-232 neutron cross-sections are presented. The measurements have been carried out on the gamma-ray multisection liquid detector and neutron detector as a battery of boron counters on the 120 m flight path of the pulsed fast reactor IBR-30. As the filter samples were used the metallic disks of various thickness and diameter of 45 mm. Two plates from metallic thorium with thickness of 0.2 mm and with the square of 4.5x4.5 cm 2 were used as the radiator samples. The group neutron total and capture cross-sections within the accuracy of 2-7% in the energy range of (10 eV-10 keV) were obtained from the transmissions and the sum spectra of g-rays from the fourth multiplicity to the seventh one. The neutron capture group cross-sections of 238 U were used as the standard for obtaining of thorium ones. Analogous values were calculated on the GRUCON code with the ENDF/B-6, JENDL-3 evaluated data libraries. Within the limits of experimental errors an agreement between the experiment and calculation is observed, but in some groups the experimental values are larger than the calculated ones. (author)

  19. Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wongkham, W. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Inthanon, K. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Anuntalabhochai, S. [Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2013-06-15

    Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

  20. The astrophysical S-factor for dd-reactions at keV-energy range

    International Nuclear Information System (INIS)

    Bystritskii, V.; Bystritsky, V.; Chaikovsky, S.

    2001-01-01

    The experimental results of measurements of the astrophysical S-factor for dd-reaction at keV-energy range collision energies using liner plasma technique are presented. The experiments were carried out at the high current generator of the Institute of High-Current Electronics in Tomsk, Russia. The measured values of the S-factors for the deuteron collision energies 1.80, 2.06 and 2.27 keV are S dd =(114±68), (64±30), (53±16) b x keV, respectively. The corresponding cross sections for dd-reactions, described as a product of the barrier factor and measured astrophysical S-factor, are σ dd n (E col =1.80 keV)=(4.3±2.6) x 10 -33 cm 2 ; σ dd n (E col =2.06 keV)=(9.8±4.6) x 10 -33 cm 2 ; σ dd n (E col =2.27 keV)=(2.1±0.6) x 10 -32 cm 2 . (orig.) [de

  1. Nano-ranged low-energy ion-beam-induced DNA transfer in biological cells

    International Nuclear Information System (INIS)

    Yu, L.D.; Wongkham, W.; Prakrajang, K.; Sangwijit, K.; Inthanon, K.; Thongkumkoon, P.; Wanichapichart, P.; Anuntalabhochai, S.

    2013-01-01

    Low-energy ion beams at a few tens of keV were demonstrated to be able to induce exogenous macromolecules to transfer into plant and bacterial cells. In the process, the ion beam with well controlled energy and fluence bombarded living cells to cause certain degree damage in the cell envelope in nanoscales to facilitate the macromolecules such as DNA to pass through the cell envelope and enter the cell. Consequently, the technique was applied for manipulating positive improvements in the biological species. This physical DNA transfer method was highly efficient and had less risk of side-effects compared with chemical and biological methods. For better understanding of mechanisms involved in the process, a systematic study on the mechanisms was carried out. Applications of the technique were also expanded from DNA transfer in plant and bacterial cells to DNA transfection in human cancer cells potentially for the stem cell therapy purpose. Low-energy nitrogen and argon ion beams that were applied in our experiments had ranges of 100 nm or less in the cell envelope membrane which was majorly composed of polymeric cellulose. The ion beam bombardment caused chain-scission dominant damage in the polymer and electrical property changes such as increase in the impedance in the envelope membrane. These nano-modifications of the cell envelope eventually enhanced the permeability of the envelope membrane to favor the DNA transfer. The paper reports details of our research in this direction.

  2. Totally implantable total artificial heart and ventricular assist device with multipurpose miniature electromechanical energy system.

    Science.gov (United States)

    Takatani, S; Orime, Y; Tasai, K; Ohara, Y; Naito, K; Mizuguchi, K; Makinouchi, K; Damm, G; Glueck, J; Ling, J

    1994-01-01

    A multipurpose miniature electromechanical energy system has been developed to yield a compact, efficient, durable, and biocompatible total artificial heart (TAH) and ventricular assist device (VAD). Associated controller-driver electronics were recently miniaturized and converted into hybrid circuits. The hybrid controller consists of a microprocessor and controller, motor driver, Hall sensor, and commutation circuit hybrids. The sizing study demonstrated that all these components can be incorporated in the pumping unit of the TAH and VAD, particularly in the centerpiece of the TAH and the motor housing of the VAD. Both TAH and VAD pumping units will start when their power line is connected to either the internal power pack or the external battery unit. As a redundant driving and diagnostic port, an emergency port was newly added and will be placed in subcutaneous location. In case of system failure, the skin will be cut down, and an external motor drive or a pneumatic driver will be connected to this port to run the TAH. This will minimize the circulatory arrest time. Overall efficiency of the TAH without the transcutaneous energy transmission system was 14-18% to deliver pump outputs of 4-9 L/min against the right and left afterload pressures of 25 and 100 mm Hg. The internal power requirement ranged from 6 to 13 W. The rechargeable batteries such as NiCd or NiMH with 1 AH capacity can run the TAH for 30-45 min. The external power requirement, when TETS efficiency of 75% was assumed, ranged from 8 to 18 W. The accelerated endurance test in the 42 degrees C saline bath demonstrated stable performance over 4 months. Long-term endurance and chronic animal studies will continue toward a system with 5 years durability by the year 2000.

  3. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  4. Intracorporeal Heat Distribution from Fully Implantable Energy Sources for Mechanical Circulatory Support: A Computational Proof-of-Concept Study

    Directory of Open Access Journals (Sweden)

    Jacopo Biasetti

    2017-10-01

    Full Text Available Mechanical circulatory support devices, such as total artificial hearts and left ventricular assist devices, rely on external energy sources for their continuous operation. Clinically approved power supplies rely on percutaneous cables connecting an external energy source to the implanted device with the associated risk of infections. One alternative, investigated in the 70s and 80s, employs a fully implanted nuclear power source. The heat generated by the nuclear decay can be converted into electricity to power circulatory support devices. Due to the low conversion efficiencies, substantial levels of waste heat are generated and must be dissipated to avoid tissue damage, heat stroke, and death. The present work computationally evaluates the ability of the blood flow in the descending aorta to remove the locally generated waste heat for subsequent full-body distribution and dissipation, with the specific aim of investigating methods for containment of local peak temperatures within physiologically acceptable limits. To this aim, coupled fluid–solid heat transfer computational models of the blood flow in the human aorta and different heat exchanger architectures are developed. Particle tracking is used to evaluate temperature histories of cells passing through the heat exchanger region. The use of the blood flow in the descending aorta as a heat sink proves to be a viable approach for the removal of waste heat loads. With the basic heat exchanger design, blood thermal boundary layer temperatures exceed 50°C, possibly damaging blood cells and proteins. Improved designs of the heat exchanger, with the addition of fins and heat guides, allow for drastically lower blood temperatures, possibly leading to a more biocompatible implant. The ability to maintain blood temperatures at biologically compatible levels will ultimately allow for the body-wise distribution, and subsequent dissipation, of heat loads with minimum effects on the human physiology.

  5. Intracorporeal Heat Distribution from Fully Implantable Energy Sources for Mechanical Circulatory Support: A Computational Proof-of-Concept Study.

    Science.gov (United States)

    Biasetti, Jacopo; Pustavoitau, Aliaksei; Spazzini, Pier Giorgio

    2017-01-01

    Mechanical circulatory support devices, such as total artificial hearts and left ventricular assist devices, rely on external energy sources for their continuous operation. Clinically approved power supplies rely on percutaneous cables connecting an external energy source to the implanted device with the associated risk of infections. One alternative, investigated in the 70s and 80s, employs a fully implanted nuclear power source. The heat generated by the nuclear decay can be converted into electricity to power circulatory support devices. Due to the low conversion efficiencies, substantial levels of waste heat are generated and must be dissipated to avoid tissue damage, heat stroke, and death. The present work computationally evaluates the ability of the blood flow in the descending aorta to remove the locally generated waste heat for subsequent full-body distribution and dissipation, with the specific aim of investigating methods for containment of local peak temperatures within physiologically acceptable limits. To this aim, coupled fluid-solid heat transfer computational models of the blood flow in the human aorta and different heat exchanger architectures are developed. Particle tracking is used to evaluate temperature histories of cells passing through the heat exchanger region. The use of the blood flow in the descending aorta as a heat sink proves to be a viable approach for the removal of waste heat loads. With the basic heat exchanger design, blood thermal boundary layer temperatures exceed 50°C, possibly damaging blood cells and proteins. Improved designs of the heat exchanger, with the addition of fins and heat guides, allow for drastically lower blood temperatures, possibly leading to a more biocompatible implant. The ability to maintain blood temperatures at biologically compatible levels will ultimately allow for the body-wise distribution, and subsequent dissipation, of heat loads with minimum effects on the human physiology.

  6. An Implantable Cardiovascular Pressure Monitoring System with On-Chip Antenna and RF Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Yu-Chun Liu

    2015-08-01

    Full Text Available An implantable wireless system with on-chip antenna for cardiovascular pressure monitor is studied. The implantable device is operated in a batteryless manner, powered by an external radio frequency (RF power source. The received RF power level can be sensed and wirelessly transmitted along with blood pressure signal for feedback control of the external RF power. The integrated electronic system, consisting of a capacitance-to-voltage converter, an adaptive RF powering system, an RF transmitter and digital control circuitry, is simulated using a TSMC 0.18 μm CMOS technology. The implanted RF transmitter circuit is combined with a low power voltage-controlled oscillator resonating at 5.8 GHz and a power amplifier. For the design, the simulation model is setup using ADS and HFSS software. The dimension of the antenna is 1 × 0.6 × 4.8 mm3 with a 1 × 0.6 mm2 on-chip circuit which is small enough to place in human carotid artery.

  7. SU-E-T-274: Radiation Therapy with Very High-Energy Electron (VHEE) Beams in the Presence of Metal Implants

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, C; Palma, B; Qu, B; Maxim, P; Loo, B; Bazalova, M [Department of Radiation Oncology, Stanford University, Stanford, CA (United States); Hardemark, B; Hynning, E [RaySearch Laboratories, Stockholm (Sweden)

    2014-06-01

    Purpose: To evaluate the effect of metal implants on treatment plans for radiation therapy with very high-energy electron (VHEE) beams. Methods: The DOSXYZnrc/BEAMnrc Monte Carlo (MC) codes were used to simulate 50–150MeV VHEE beam dose deposition and its effects on steel and titanium (Ti) heterogeneities in a water phantom. Heterogeneities of thicknesses ranging from 0.5cm to 2cm were placed at 10cm depth. MC was also used to calculate electron and photon spectra generated by the VHEE beams' interaction with metal heterogeneities. The original VMAT patient dose calculation was planned in Eclipse. Patient dose calculations with MC-generated beamlets were planned using a Matlab GUI and research version of RayStation. VHEE MC treatment planning was performed on water-only geometry and water with segmented prostheses (steel and Ti) geometries with 100MeV and 150MeV beams. Results: 100MeV PDD 5cm behind steel/Ti heterogeneity was 51% less than in the water-only phantom. For some cases, dose enhancement lateral to the borders of the phantom increased the dose by up to 22% in steel and 18% in Ti heterogeneities. The dose immediately behind steel heterogeneity decreased by an average of 6%, although for 150MeV, the steel heterogeneity created a 23% increase in dose directly behind it. The average dose immediately behind Ti heterogeneities increased 10%. The prostate VHEE plans resulted in mean dose decrease to the bowel (20%), bladder (7%), and the urethra (5%) compared to the 15MV VMAT plan. The average dose to the body with prosthetic implants was 5% higher than to the body without implants. Conclusion: Based on MC simulations, metallic implants introduce dose perturbations to VHEE beams from lateral scatter and backscatter. However, when performing clinical planning on a prostate case, the use of multiple beams and inverse planning still produces VHEE plans that are dosimetrically superior to photon VMAT plans. BW Loo and P Maxim received research support from

  8. SU-E-T-274: Radiation Therapy with Very High-Energy Electron (VHEE) Beams in the Presence of Metal Implants

    International Nuclear Information System (INIS)

    Jensen, C; Palma, B; Qu, B; Maxim, P; Loo, B; Bazalova, M; Hardemark, B; Hynning, E

    2014-01-01

    Purpose: To evaluate the effect of metal implants on treatment plans for radiation therapy with very high-energy electron (VHEE) beams. Methods: The DOSXYZnrc/BEAMnrc Monte Carlo (MC) codes were used to simulate 50–150MeV VHEE beam dose deposition and its effects on steel and titanium (Ti) heterogeneities in a water phantom. Heterogeneities of thicknesses ranging from 0.5cm to 2cm were placed at 10cm depth. MC was also used to calculate electron and photon spectra generated by the VHEE beams' interaction with metal heterogeneities. The original VMAT patient dose calculation was planned in Eclipse. Patient dose calculations with MC-generated beamlets were planned using a Matlab GUI and research version of RayStation. VHEE MC treatment planning was performed on water-only geometry and water with segmented prostheses (steel and Ti) geometries with 100MeV and 150MeV beams. Results: 100MeV PDD 5cm behind steel/Ti heterogeneity was 51% less than in the water-only phantom. For some cases, dose enhancement lateral to the borders of the phantom increased the dose by up to 22% in steel and 18% in Ti heterogeneities. The dose immediately behind steel heterogeneity decreased by an average of 6%, although for 150MeV, the steel heterogeneity created a 23% increase in dose directly behind it. The average dose immediately behind Ti heterogeneities increased 10%. The prostate VHEE plans resulted in mean dose decrease to the bowel (20%), bladder (7%), and the urethra (5%) compared to the 15MV VMAT plan. The average dose to the body with prosthetic implants was 5% higher than to the body without implants. Conclusion: Based on MC simulations, metallic implants introduce dose perturbations to VHEE beams from lateral scatter and backscatter. However, when performing clinical planning on a prostate case, the use of multiple beams and inverse planning still produces VHEE plans that are dosimetrically superior to photon VMAT plans. BW Loo and P Maxim received research support from

  9. GC-MS analysis of ethanol solution with D2O as solvent implanted by low energy N+

    International Nuclear Information System (INIS)

    Shi Huaibin; Shao Chunlin; Yu Zengliang

    2001-10-01

    Low energy ions were produced by N 2 glow-discharge. The positive ones were accelerated into ethanol solution with D 2 O as solvent to induce chemical reactions. GC-MS analysis showed that DCH 2 CH 2 OH, HOCH 2 CH 2 OD were produced by such kind of implantation. Thus, it was proved that the reaction was mainly caused by radicals generated by decomposition of water molecules, D . and . OD played an important role in the process. Meanwhile, CH 3 COOD and HOCH 2 CH 2 ND 2 were also found in the products, so it was concluded that the reaction was carried out under an oxidative atmosphere, which was thought to be probably related to . OD radicals, too. The capture of D from D 2 O by N + to form . ND 2 radicals was not only an initial step to produce HOCH 2 CH 2 ND 2 but also served as a probable pattern for 'nitrogen deposition'. All these were helpful to reveal the mechanism of the reaction induced by low energy N + implanting into solution samples

  10. High energy metal ion implantation using 'Magis', a novel, broad-beam, Marx-generator-based ion source

    International Nuclear Information System (INIS)

    Anders, A.; Brown, I.G.; Dickinson, M.R.; MacGill, R.A.

    1996-08-01

    Ion energy of the beam formed by an ion source is proportional to extractor voltage and ion charge state. Increasing the voltage is difficult and costly for extraction voltage over 100 kV. Here we explore the possibility of increasing the charge states of metal ions to facilitate high-energy, broad beam ion implantation at a moderate voltage level. Strategies to enhance the ion charge state include operating in the regimes of high-current vacuum sparks and short pulses. Using a time-of-flight technique we have measured charge states as high as 7+ (73 kA vacuum spark discharge) and 4+ (14 kA short pulse arc discharge), both for copper, with the mean ion charge states about 6.0 and 2.5, respectively. Pulsed discharges can conveniently be driven by a modified Marx generator, allowing operation of ''Magis'' with a single power supply (at ground potential) for both plasma production and ion extraction

  11. Electron transport in furfural: dependence of the electron ranges on the cross sections and the energy loss distribution functions

    Science.gov (United States)

    Ellis-Gibbings, L.; Krupa, K.; Colmenares, R.; Blanco, F.; Muńoz, A.; Mendes, M.; Ferreira da Silva, F.; Limá Vieira, P.; Jones, D. B.; Brunger, M. J.; García, G.

    2016-09-01

    Recent theoretical and experimental studies have provided a complete set of differential and integral electron scattering cross section data from furfural over a broad energy range. The energy loss distribution functions have been determined in this study by averaging electron energy loss spectra for different incident energies and scattering angles. All these data have been used as input parameters for an event by event Monte Carlo simulation procedure to obtain the electron energy deposition patterns and electron ranges in liquid furfural. The dependence of these results on the input cross sections is then analysed to determine the uncertainty of the simulated values.

  12. Probability tables and gauss quadrature: application to neutron cross-sections in the unresolved energy range

    International Nuclear Information System (INIS)

    Ribon, P.; Maillard, J.M.

    1986-09-01

    The idea of describing neutron cross-section fluctuations by sets of discrete values, called ''probability tables'', was formulated some 15 years ago. We propose to define the probability tables from moments by equating the moments of the actual cross-section distribution in a given energy range to the moments of the table. This definition introduces PADE approximants, orthogonal polynomials and GAUSS quadrature. This mathematical basis applies very well to the total cross-section. Some difficulties appear when partial cross-sections are taken into account, linked to the ambiguity of the definition of multivariate PADE approximants. Nevertheless we propose solutions and choices which appear to be satisfactory. Comparisons are made with other definitions of probability tables and an example of the calculation of a mixture of nuclei is given. 18 refs

  13. Calculation of Multisphere Neutron Spectrometer Response Functions in Energy Range up to 20 MeV

    CERN Document Server

    Martinkovic, J

    2005-01-01

    Multisphere neutron spectrometer is a basic instrument of neutron measurements in the scattered radiation field at charged-particles accelerators for radiation protection and dosimetry purposes. The precise calculation of the spectrometer response functions is a necessary condition of the propriety of neutron spectra unfolding. The results of the response functions calculation for the JINR spectrometer with LiI(Eu) detector (a set of 6 homogeneous and 1 heterogeneous moderators, "bare" detector within cadmium cover and without it) at two geometries of the spectrometer irradiation - in uniform monodirectional and uniform isotropic neutron fields - are given. The calculation was carried out by the code MCNP in the neutron energy range 10$^{-8}$-20 MeV.

  14. High Voltage Gain Dual Active Bridge Converter with an Extended Operation Range for Renewable Energy Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Tomas Manez, Kevin; Yudi, Xiao

    2018-01-01

    Bridge (P2DAB) converter, i.e. low-voltage (LV) side parallel and high-voltage (HV) side series, is proposed to achieve high voltage gain and low current stress over switching devices and transformer windings. Given the unmodified P2DAB power stage, by regulating the phase-shift angle between......Developing bidirectional dc-dc converters has become a critical research topic and gains more and more attention in recent years due to the extensive applications of smart grids with energy storages, hybrid and electrical vehicles and dc microgrids. In this paper, a Partial Parallel Dual Active...... the paralleled active bridges, the power equations and voltage gain are then modified, and therefore the operation range can be extended effectively. The operating principles of the proposed converter and its power characteristics under various operation modes are studied, and the design constraints...

  15. Transport properties of gaseous ions over a wide energy range. Part III

    International Nuclear Information System (INIS)

    Ellis, H.W.; Thackston, M.G.; McDaniel, E.W.; Mason, E.A.

    1984-01-01

    This paper updates and extends in scope our two previous papers entitled ''Transport Properties of Gaseous Ions over a Wide Energy Range.'' The references to the earlier publications (referred to as ''Part I'' and ''Part II'') are I, H. W. Ellis, R. Y. Pai, E. W. McDonald, E. A. Mason, and L. A. Viehland, ATOMIC DATA AND NUCLEAR DATA TABLES 17, 177--210 (19876); and II, H. W. Ellis, E. W. McDaniel, D. L. Albritton, L. A. Veihland, S. L. Lin, and E. A. Mason, ATOMIC DATA AND NUCLEAR DATA TABLES 22, 179--217 (1978). Parts I and II contained compilations of experimental data on ionic mobilities and diffusion coefficients (both longitudinal and transverse) for ions in neutral gase (almost exclusively at room temperature) in an externally applied electric field

  16. Multi-functional measurement systems for studying photon-hadron interactions in the intermediate energy range

    International Nuclear Information System (INIS)

    Baranov, P.S.; Vol'nov, M.I.; Eliseev, A.N.

    1983-01-01

    The PION multifunctional time-of-flight measurement system operating on-line with the D-116 computer is described. The system is designed to study proton-hadron interaction processes using the PACHRA synchrotron beam. The following devices are involved into the basic permanent system equipment: two gamma telescope counters, neutron spectrometer, scintillation mass spectrometer, and also cryogenic liquid hydrogen and liquid deuterium targets, ionization chambers, and quantometer. The time-of-flight neutron spectrometer consists of 4 coordinate-sensitive scintillation counters, before which the logic detector operating in the anticoincidence regime is placed. Information acquisition and measurement system control are accomplished by the computer using the CAMAK modules. The above system allows one to observe at the same time different physical processes and to carry out simultaneous measurements in a wide energy range

  17. Probability tables and gauss quadrature: application to neutron cross-sections in the unresolved energy range

    International Nuclear Information System (INIS)

    Ribon, P.; Maillard, J.M.

    1986-01-01

    The idea of describing neutron cross-section fluctuations by sets of discrete values, called probability tables, was formulated some 15 years ago. The authors propose to define the probability tables from moments by equating the moments of the actual cross-section distribution in a given energy range to the moments of the table. This definition introduces PADE approximants, orthogonal polynomials and GAUSS quadrature. This mathematical basis applies very well to the total cross-section. Some difficulties appear when partial cross-sections are taken into account, linked to the ambiguity of the definition of multivariate PADE approximants. Nevertheless the authors propose solutions and choices which appear to be satisfactory. Comparisons are made with other definition of probability tables and an example of the calculation of a mixture of nuclei is given

  18. Range-energy relation, range straggling and response function of CsI(Tl), BGO and GSO(Ce) scintillators for light ions

    CERN Document Server

    Avdeichikov, V; Jakobsson, B; Rodin, A M; Ter-Akopian, G M

    2000-01-01

    Range-energy relations and range straggling of sup 1 sup , sup 2 sup , sup 3 H and sup 4 sup , sup 6 He isotopes with the energy approx 50A MeV are measured for the CsI(Tl), BGO and GSO(Ce) scintillators with an accuracy better than 0.2% and 5%, respectively. The Si-Sci/PD telescope was exposed to secondary beams from the mass separator ACCULINNA. The experimental technique is based on the registration of the 'jump' in the amplitude of the photodiode signal for ions passing through the scintillation crystal. Light response of the scintillators for ions 1<=Z<=4 is measured in energy range (5-50)A MeV, the results are in good agreement with calculations based on Birks model. The energy loss straggling for particles with DELTA E/E=0.01-0.50 and mass up to A=10 in 286 mu m DELTA E silicon detector is studied and compared with theoretical prescriptions. The results allow a precise absolute calibration of the scintillation crystal and to optimize the particle identification by the DELTA E-E(Sci/PD) method.

  19. Average fast neutron flux in three energy ranges in the Quinta assembly irradiated by two types of beams

    Directory of Open Access Journals (Sweden)

    Strugalska-Gola Elzbieta

    2017-01-01

    Full Text Available This work was performed within the international project “Energy plus Transmutation of Radioactive Wastes” (E&T - RAW for investigations of energy production and transmutation of radioactive waste of the nuclear power industry. 89Y (Yttrium 89 samples were located in the Quinta assembly in order to measure an average high neutron flux density in three different energy ranges using deuteron and proton beams from Dubna accelerators. Our analysis showed that the neutron density flux for the neutron energy range 20.8 - 32.7 MeV is higher than for the neutron energy range 11.5 - 20.8 MeV both for protons with an energy of 0.66 GeV and deuterons with an energy of 2 GeV, while for deuteron beams of 4 and 6 GeV we did not observe this.

  20. A portable and wide energy range semiconductor-based neutron spectrometer

    International Nuclear Information System (INIS)

    Hoshor, C.B.; Oakes, T.M.; Myers, E.R.; Rogers, B.J.; Currie, J.E.; Young, S.M.; Crow, J.A.; Scott, P.R.; Miller, W.H.; Bellinger, S.L.; Sobering, T.J.; Fronk, R.G.; Shultis, J.K.; McGregor, D.S.; Caruso, A.N.

    2015-01-01

    Hand-held instruments that can be used to passively detect and identify sources of neutron radiation—either bare or obscured by neutron moderating and/or absorbing material(s)—in real time are of interest in a variety of nuclear non-proliferation and health physics applications. Such an instrument must provide a means to high intrinsic detection efficiency and energy-sensitive measurements of free neutron fields, for neutrons ranging from thermal energies to the top end of the evaporation spectrum. To address and overcome the challenges inherent to the aforementioned applications, four solid-state moderating-type neutron spectrometers of varying cost, weight, and complexity have been designed, fabricated, and tested. The motivation of this work is to introduce these novel human-portable instruments by discussing the fundamental theory of their operation, investigating and analyzing the principal considerations for optimal instrument design, and evaluating the capability of each of the four fabricated spectrometers to meet the application needs.

  1. A portable and wide energy range semiconductor-based neutron spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Hoshor, C.B. [Department of Physics, University of Missouri, Kansas City, MO (United States); Oakes, T.M. [Nuclear Science and Engineering Institute, University of Missouri, Columbia, MO (United States); Myers, E.R.; Rogers, B.J.; Currie, J.E.; Young, S.M.; Crow, J.A.; Scott, P.R. [Department of Physics, University of Missouri, Kansas City, MO (United States); Miller, W.H. [Nuclear Science and Engineering Institute, University of Missouri, Columbia, MO (United States); Missouri University Research Reactor, Columbia, MO (United States); Bellinger, S.L. [Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS (United States); Sobering, T.J. [Electronics Design Laboratory, Kansas State University, Manhattan, KS (United States); Fronk, R.G.; Shultis, J.K.; McGregor, D.S. [Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS (United States); Caruso, A.N., E-mail: carusoan@umkc.edu [Department of Physics, University of Missouri, Kansas City, MO (United States)

    2015-12-11

    Hand-held instruments that can be used to passively detect and identify sources of neutron radiation—either bare or obscured by neutron moderating and/or absorbing material(s)—in real time are of interest in a variety of nuclear non-proliferation and health physics applications. Such an instrument must provide a means to high intrinsic detection efficiency and energy-sensitive measurements of free neutron fields, for neutrons ranging from thermal energies to the top end of the evaporation spectrum. To address and overcome the challenges inherent to the aforementioned applications, four solid-state moderating-type neutron spectrometers of varying cost, weight, and complexity have been designed, fabricated, and tested. The motivation of this work is to introduce these novel human-portable instruments by discussing the fundamental theory of their operation, investigating and analyzing the principal considerations for optimal instrument design, and evaluating the capability of each of the four fabricated spectrometers to meet the application needs.

  2. Using the Moist Static Energy Budget to Understand Storm Track Shifts across a Range of Timescales

    Science.gov (United States)

    Barpanda, P.; Shaw, T.

    2017-12-01

    Storm tracks shift meridionally in response to forcing across a range of time scales. Here we formulate a moist static energy (MSE) framework for storm track position and use it to understand storm track shifts in response to seasonal insolation, El Niño minus La Niña conditions, and direct (increased CO2 over land) and indirect (increased sea surface temperature) effects of increased CO2. Two methods (linearized Taylor series and imposed MSE flux divergence) are developed to quantify storm track shifts and decompose them into contributions from net energy (MSE input to the atmosphere minus atmospheric storage) and MSE flux divergence by the mean meridional circulation and stationary eddies. Net energy is not a dominant contribution across the time scales considered. The stationary eddy contribution dominates the storm-track shift in response to seasonal insolation, El Niño minus La Niña conditions, and CO2 direct effect in the Northern Hemisphere, whereas the mean meridional circulation contribution dominates the shift in response to CO2 indirect effect during northern winter and in the Southern Hemisphere during May and October. Overall, the MSE framework shows the seasonal storm-track shift in the Northern Hemisphere is connected to the stationary eddy MSE flux evolution. Furthermore, the equatorward storm-track shift during northern winter in response to El Niño minus La Niña conditions involves a different regime than the poleward shift in response to increased CO2 even though the tropical upper troposphere warms in both cases.

  3. 1/J2 corrections to BMN energies from the quantum long range Landau-Lifshitz model

    International Nuclear Information System (INIS)

    Minahan, Joseph A.; Tirziu, Alin; Tseytlin, Arkady A.

    2005-01-01

    In a previous paper [hep-th/0509071], it was shown that quantum 1/J corrections to the BMN spectrum in an effective Landau-Lifshitz (LL) model match with the results from the one-loop gauge theory, provided one chooses an appropriate regularization. In this paper we continue this study for the conjectured Bethe ansatz for the long range spin chain representing perturbative large-N N = 4 Super Yang-Mills in the SU(2) sector, and the 'quantum string' Bethe ansatz for its string dual. The comparison is carried out for corrections to BMN energies up to order λ-tilde 3 in the effective expansion parameter λ-tilde = λ/J 2 . After determining the 'gauge-theory' LL action to order λ-tilde 3 , which is accomplished indirectly by fixing the coefficients in the LL action so that the energies of circular strings match with the energies found using the Bethe ansatz, we find perfect agreement. We interpret this as further support for an underlying integrability of the system. We then consider the 'string-theory' LL action which is a limit of the classical string action representing fast string motion on an S 3 subspace of S 5 and compare the resulting λ-tilde 3 /J 2 corrections to the prediction of the 'string' Bethe ansatz. As in the gauge case, we find precise matching. This indicates that the LL hamiltonian supplemented with a normal ordering prescription and ζ-function regularization reproduces the full superstring result for the 1/J 2 corrections, and also signifies that the string Bethe ansatz does describe the quantum BMN string spectrum to order 1/J 2 . We also comment on using the quantum LL approach to determine the non-analytic contributions in λ that are behind the strong to weak coupling interpolation between the string and gauge results

  4. Energy savings and increased electric vehicle range through improved battery thermal management

    International Nuclear Information System (INIS)

    Smith, Joshua; Hinterberger, Michael; Schneider, Christoph; Koehler, Juergen

    2016-01-01

    Lithium-ion cells are temperature sensitive: operation outside the optimal operating range causes premature aging and correspondingly reduces vehicle range and battery system lifetime. In order to meet consumer demands for electric and hybrid-electric vehicle performance, especially in adverse climates, a battery thermal management system (BTMS) is often required. This work presents a novel experimental method for analyzing BTMS using three sample cooling plate concepts. For each concept, the input parameters (ambient temperature, coolant temperature and coolant flow rate) are varied and the resulting effect on the average temperature and temperature distribution across and between cells is compared. Additionally, the pressure loss along the coolant path is utilized as an indicator of energy efficiency. Using the presented methodology, various cooling plate layouts optimized for production alternative techniques are compared to the state of the art. It is shown that these production-optimized cooling plates provide sufficient thermal performance with the additional benefit of mechanical integration within the battery and/or vehicle system. It is also shown that the coolant flow influences battery cell thermal behavior more than the solid material and that pressure drop is more sensitive to geometrical changes in the cooling plate than temperature changes at the module.

  5. Thermal behaviour of nitrogen implanted into zirconium

    International Nuclear Information System (INIS)

    Miyagawa, S.; Ikeyama, M.; Saitoh, K.; Nakao, S.; Niwa, H.; Tanemura, S.; Miyagawa, Y.

    1994-01-01

    Zirconium films were implanted with 15 N ions of energy 50keV to a total fluence of 1x10 18 ionscm -2 in an attempt to study the formation process and thermal stability of ZrN layers produced by high fluence implantation of nitrogen. Subsequent to the implantation at room temperature, samples were annealed at temperatures of 300 C-900 C. The depth profiles of the implanted nitrogen were measured by nuclear reaction analysis using the 15 N(p,αγ) 12 C at E R =429keV, and the surfaces were examined by thin film X-ray diffraction (XRD) and scanning electron microscopy. There were many blisters 0.2-0.4μm in diameter on the surface of the as-implanted samples and double peaks were observed in the nitrogen depth profiles; they were in both sides of the mean projected range. It was found that most of the blisters became extinct after annealing above 400 C, and the XRD peak (111) intensity was increased with the increase in the annealing temperature. Moreover, 14 N and 15 N implantations were superimposed on Zr samples in order to study the atomic migration of nitrogen at each stage of high fluence implantation. It was found that the decrease in the peak at the deeper layers was related to blister extinction and nitrogen diffusion into underling zirconium which could be correlated with radiation damage induced by post-implanted ions. ((orig.))

  6. Metal ion implantation: Conventional versus immersion

    International Nuclear Information System (INIS)

    Brown, I.G.; Anders, A.; Anders, S.; Dickinson, M.R.; MacGill, R.A.

    1994-01-01

    Vacuum-arc-produced metal plasma can be used as the ion feedstock material in an ion source for doing conventional metal ion implantation, or as the immersing plasma for doing plasma immersion ion implantation. The basic plasma production method is the same in both cases; it is simple and efficient and can be used with a wide range of metals. Vacuum arc ion sources of different kinds have been developed by the authors and others and their suitability as a metal ion implantation tool has been well established. Metal plasma immersion surface processing is an emerging tool whose characteristics and applications are the subject of present research. There are a number of differences between the two techniques, both in the procedures used and in the modified surfaces created. For example, the condensibility of metal plasma results in thin film formation and subsequent energetic implantation is thus done through the deposited layer; in the usual scenario, this recoil implantation and the intermixing it produces is a feature of metal plasma immersion but not of conventional energetic ion implantation. Metal plasma immersion is more suited (but not limited) to higher doses (>10 17 cm -2 ) and lower energies (E i < tens of keV) than the usual ranges of conventional metal ion implantation. These and other differences provide these vacuum-arc-based surface modification tools with a versatility that enhances the overall technological attractiveness of both

  7. X-ray diffraction patterns in high-energy proton implanted silicon

    International Nuclear Information System (INIS)

    Wieteska, K.; Dluzewska, K.D.; Wierzchowski, W.; Graeff, W.

    1998-01-01

    Silicon crystals implanted with 1 and 1.6 MeV protons were studied by means of conventional source double-crystal and synchrotron multi-crystal arrangements. Both the rocking curves and series of topographs were recorded in different parallel settings employing different reflections and wavelengths of radiation. A comparison of rocking curves in different regions of implanted areas was performed in synchrotron multi-crystal arrangement with a beam of a very small diameter. The rocking curves exhibited subsidiary interference maxima with increasing periodicity on the low angle side. The plane wave topographs taken at different angular setting revealed characteristic fringes whose number decreased with increasing distance from the main maximum. The fringe pattern did not depend on the direction of the diffraction vector. The number of fringes for equivalent angular distance from the maximum was larger for higher order of reflection. The shape of the rocking curve and other diffraction patterns were reasonably explained assuming the lattice parameter change depth distribution proportional to the profile obtained from the Biersack-Ziegler theory and lateral non-uniformity of ion dose. A good approximation of the experimental results was obtained using numerical integration of the Takagi-Taupin equations. (orig.)

  8. A preferential design approach for energy-efficient and robust implantable neural signal processing hardware.

    Science.gov (United States)

    Narasimhan, Seetharam; Chiel, Hillel J; Bhunia, Swarup

    2009-01-01

    For implantable neural interface applications, it is important to compress data and analyze spike patterns across multiple channels in real time. Such a computational task for online neural data processing requires an innovative circuit-architecture level design approach for low-power, robust and area-efficient hardware implementation. Conventional microprocessor or Digital Signal Processing (DSP) chips would dissipate too much power and are too large in size for an implantable system. In this paper, we propose a novel hardware design approach, referred to as "Preferential Design" that exploits the nature of the neural signal processing algorithm to achieve a low-voltage, robust and area-efficient implementation using nanoscale process technology. The basic idea is to isolate the critical components with respect to system performance and design them more conservatively compared to the noncritical ones. This allows aggressive voltage scaling for low power operation while ensuring robustness and area efficiency. We have applied the proposed approach to a neural signal processing algorithm using the Discrete Wavelet Transform (DWT) and observed significant improvement in power and robustness over conventional design.

  9. An improved energy-range relationship for high-energy electron beams based on multiple accurate experimental and Monte Carlo data sets

    International Nuclear Information System (INIS)

    Sorcini, B.B.; Andreo, P.; Hyoedynmaa, S.; Brahme, A.; Bielajew, A.F.

    1995-01-01

    A theoretically based analytical energy-range relationship has been developed and calibrated against well established experimental and Monte Carlo calculated energy-range data. Only published experimental data with a clear statement of accuracy and method of evaluation have been used. Besides published experimental range data for different uniform media, new accurate experimental data on the practical range of high-energy electron beams in water for the energy range 10-50 MeV from accurately calibrated racetrack microtrons have been used. Largely due to the simultaneous pooling of accurate experimental and Monte Carlo data for different materials, the fit has resulted in an increased accuracy of the resultant energy-range relationship, particularly at high energies. Up to date Monte Carlo data from the latest versions of the codes ITS3 and EGS4 for absorbers of atomic numbers between four and 92 (Be, C, H 2 O, PMMA, Al, Cu, Ag, Pb and U) and incident electron energies between 1 and 100 MeV have been used as a complement where experimental data are sparse or missing. The standard deviation of the experimental data relative to the new relation is slightly larger than that of the Monte Carlo data. This is partly due to the fact that theoretically based stopping and scattering cross-sections are used both to account for the material dependence of the analytical energy-range formula and to calculate ranges with the Monte Carlo programs. For water the deviation from the traditional energy-range relation of ICRU Report 35 is only 0.5% at 20 MeV but as high as - 2.2% at 50 MeV. An improved method for divergence and ionization correction in high-energy electron beams has also been developed to enable use of a wider range of experimental results. (Author)

  10. Metallic artefact reduction with monoenergetic dual-energy CT: systematic ex vivo evaluation of posterior spinal fusion implants from various vendors and different spine levels.

    Science.gov (United States)

    Guggenberger, R; Winklhofer, S; Osterhoff, G; Wanner, G A; Fortunati, M; Andreisek, G; Alkadhi, H; Stolzmann, P

    2012-11-01

    To evaluate optimal monoenergetic dual-energy computed tomography (DECT) settings for artefact reduction of posterior spinal fusion implants of various vendors and spine levels. Posterior spinal fusion implants of five vendors for cervical, thoracic and lumbar spine were examined ex vivo with single-energy (SE) CT (120 kVp) and DECT (140/100 kVp). Extrapolated monoenergetic DECT images at 64, 69, 88, 105 keV and individually adjusted monoenergy for optimised image quality (OPTkeV) were generated. Two independent radiologists assessed quantitative and qualitative image parameters for each device and spine level. Inter-reader agreements of quantitative and qualitative parameters were high (ICC = 0.81-1.00, κ = 0.54-0.77). HU values of spinal fusion implants were significantly different among vendors (P metallic artefacts from implants than SECT. Use of individual keV values for vendor and spine level is recommended. • Artefacts pose problems for CT following posterior spinal fusion implants. • CT images are interpreted better with monoenergetic extrapolation using dual-energy (DE) CT. • DECT extrapolation improves image quality and reduces metallic artefacts over SECT. • There were considerable differences in monoenergy values among vendors and spine levels. • Use of individualised monoenergy values is indicated for different metallic hardware devices.

  11. Number of implants for mandibular implant overdentures: a systematic review

    Science.gov (United States)

    Lee, Jeong-Yol; Kim, Ha-Young; Bryant, S. Ross

    2012-01-01

    PURPOSE The aim of this systematic review is to address treatment outcomes of Mandibular implant overdentures relative to implant survival rate, maintenance and complications, and patient satisfaction. MATERIALS AND METHODS A systematic literature search was conducted by a PubMed search strategy and hand-searching of relevant journals from included studies. Randomized Clinical Trials (RCT) and comparative clinical trial studies on mandibular implant overdentures until August, 2010 were selected. Eleven studies from 1098 studies were finally selected and data were analyzed relative to number of implants. RESULTS Six studies presented the data of the implant survival rate which ranged from 95% to 100% for 2 and 4 implant group and from 81.8% to 96.1% for 1 and 2 implant group. One study, which statistically compared implant survival rate showed no significant differences relative to the number of implants. The most common type of prosthetic maintenance and complications were replacement or reattaching of loose clips for 2 and 4 implant group, and denture repair due to the fracture around an implant for 1 and 2 implant groups. Most studies showed no significant differences in the rate of prosthetic maintenance and complication, and patient satisfaction regardless the number of implants. CONCLUSION The implant survival rate of mandibular overdentures is high regardless of the number of implants. Denture maintenance is likely not inflenced substantially by the number of implants and patient satisfaction is typically high again regardless os the number of implants. PMID:23236572

  12. Correlation between blister skin thickness, the maximum in the damage-energy distribution, and projected ranges of helium ions in Nb for the energy range 10 to 1500 keV

    International Nuclear Information System (INIS)

    St-Jacques, R.G.; Martel, J.G.; Terreault, B.; Veilleux, G.; Das, S.K.; Kaminsky, M.; Fenske, G.

    1976-01-01

    The skin thickness of blisters formed on polycrystalline niobium by 4 He + irradiation at room temperature for energies from 15 to 80 keV have been measured. Similar measurements were conducted for 10 keV 4 He + irradiation at 500 0 C to increase blister exfoliation, and thereby allow examination of a larger number of blister skins. For energies smaller than 100 keV the skin thicknesses are compared with the projected range and the damage-energy distributions constructed from moments interpolated from Winterbon's tabulated values. For energies of 10 and 15 keV the projected ranges and damage-energy distributions have also been computed with a Monte Carlo program. For energies larger than 100 keV the projected ranges of 4 He + in Nb were calculated using either Brice's formalism or the one given by Schiott. The thicknesses for 60 and 80 keV, and those reported earlier for 100 to 1500 keV correlate well with calculated projected ranges. For energies lower than 60 keV the measured thicknesses are larger than the calculated ranges

  13. Bragg-case synchrotron section topography of silicon implanted with high-energy protons and α particles

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Graeff, W.

    1997-01-01

    Back reflection section topography using white-beam synchrotron radiation has been applied for the investigation of silicon implanted with 1 and 1.6 MeV protons and 4.8 MeV α particles. The beam width was limited to 5 μm, and a series of spots in the vicinity of a centrally adjusted reflection were indexed and analysed. The back-reflection section pattern of implanted crystals usually exhibits fringes corresponding to the reflection from the surface and a series of fringes corresponding to the rear region of the shot-through layer, the destroyed layer and the bulk. The patterns were used for direct evaluation of ion ranges and thicknesses of the shot-through layer. The overall characteristics of the obtained patterns were successfully reproduced in simulations based on numerical integration of the Takagi-Taupin equations. The agreement between the simulation and experiment proves that the lattice-parameter depth-distribution profiles can be assumed to be proportional to interstitial-vacancy distributions obtained using the Monte Carlo method from the Biersack-Ziegler theory. The simulation also reproduced interference tails observed in some section patterns. It was found that these tails are caused by the ion-dose change along the beam and they were probably formed due to the interference between the radiation reflected from the bulk and those rays reflected by the rear region of the shot-through layer. (orig.)

  14. Home in the heat: Dramatic seasonal variation in home range of desert golden eagles informs management for renewable energy development

    Science.gov (United States)

    Braham, Melissa A.; Miller, Tricia A.; Duerr, Adam E.; Lanzone, Michael J.; Fesnock, Amy; LaPre, Larry; Driscoll, Daniel; Katzner, Todd E.

    2015-01-01

    Renewable energy is expanding quickly with sometimes dramatic impacts to species and ecosystems. To understand the degree to which sensitive species may be impacted by renewable energy projects, it is informative to know how much space individuals use and how that space may overlap with planned development. We used global positioning system–global system for mobile communications (GPS-GSM) telemetry to measure year-round movements of golden eagles (Aquila chrysaetos) from the Mojave Desert of California, USA. We estimated monthly space use with adaptive local convex hulls to identify the temporal and spatial scales at which eagles may encounter renewable energy projects in the Desert Renewable Energy Conservation Plan area. Mean size of home ranges was lowest and least variable from November through January and greatest in February–March and May–August. These monthly home range patterns coincided with seasonal variation in breeding ecology, habitat associations, and temperature. The expanded home ranges in hot summer months included movements to cooler, prey-dense, mountainous areas characterized by forest, grasslands, and scrublands. Breeding-season home ranges (October–May) included more lowland semi-desert and rock vegetation. Overlap of eagle home ranges and focus areas for renewable energy development was greatest when eagle home ranges were smallest, during the breeding season. Golden eagles in the Mojave Desert used more space and a wider range of habitat types than expected and renewable energy projects could affect a larger section of the regional population than was previously thought.

  15. Energy dispersion of x-ray continua in the energy range 9kev to 19kev refraction on Si wafers

    International Nuclear Information System (INIS)

    Ebel, H.; Streli, C.; Pepponi, G.; Wobrauschek, P.

    2000-01-01

    Total reflection of x-rays in matter at given grazing incidence angle is characterized by the occurrence of an energy cut-off. Photons with energies greater than the cut-off energy penetrate into matter and are refracted according to a transition from the optically more dense to the optically less dense medium. Since the refractive index depends on photon energy, an energy dispersion of continuous x-radiation is observed. The present investigation is dedicated to the energy dispersion of continuous x-radiation (Mo, 45 kV) by Si wafers. Theory and experimental results are in excellent agreement. (author)

  16. CO-ANALYSIS OF SOLAR MICROWAVE AND HARD X-RAY SPECTRAL EVOLUTIONS. I. IN TWO FREQUENCY OR ENERGY RANGES

    International Nuclear Information System (INIS)

    Song Qiwu; Huang Guangli; Nakajima, Hiroshi

    2011-01-01

    Solar microwave and hard X-ray spectral evolutions are co-analyzed in the 2000 June 10 and 2002 April 10 flares, and are simultaneously observed by the Owens-Valley Solar Array in the microwave band and by Yohkoh/Hard X-ray Telescope or RHESSI in the hard X-ray band, with multiple subpeaks in their light curves. The microwave and hard X-ray spectra are fitted by a power law in two frequency ranges of the optical thin part and two photon energy ranges, respectively. Similar to an earlier event in Shao and Huang, the well-known soft-hard-soft pattern of the lower energy range changed to the hard-soft-hard (HSH) pattern of the higher energy range during the spectral evolution of each subpeak in both hard X-ray flares. This energy dependence is actually supported by a positive correlation between the overall light curves and spectral evolution in the lower energy range, while it becomes an anti-correlation in the higher energy range. Regarding microwave data, the HSH pattern appears in the spectral evolution of each subpeak in the lower frequency range, which is somewhat similar to Huang and Nakajima. However, it returns back to the well-known pattern of soft-hard-harder for the overall spectral evolution in the higher frequency range of both events. This frequency dependence is confirmed by an anti-correlation between the overall light curves and spectral evolution in the lower frequency range, but it becomes a positive correlation in the higher frequency range. The possible mechanisms are discussed, respectively, for reasons why hard X-ray and microwave spectral evolutions have different patterns in different energy and frequency intervals.

  17. Photofragmentation spectra of halogenated methanes in the VUV photon energy range

    Energy Technology Data Exchange (ETDEWEB)

    Cartoni, Antonella, E-mail: antonella.cartoni@uniroma1.it [Dipartimento di Chimica e Tecnologie del Farmaco, Sapienza Università di Roma, P.le Aldo Moro 5, Roma 00185 (Italy); Bolognesi, Paola; Fainelli, Ettore; Avaldi, Lorenzo [CNR-IMIP, Area della Ricerca di Roma 1, Monterotondo Scalo (Rm) 00015 (Italy)

    2014-05-14

    In this paper an investigation of the photofragmentation of dihalomethanes CH{sub 2}X{sub 2} (X = F, Cl, Br, I) and chlorinated methanes (CH{sub n}Cl{sub 4−n} with n = 0–3) with VUV helium, neon, and argon discharge lamps is reported and the role played by the different halogen atoms is discussed. Halogenated methanes are a class of molecules used in several fields of chemistry and the study of their physical and chemical proprieties is of fundamental interest. In particular their photodissociation and photoionization are of great importance since the decomposition of these compounds in the atmosphere strongly affects the environment. The results of the present work show that the halogen-loss is the predominant fragmentation channel for these molecules in the VUV photon energy range and confirm their role as reservoir of chlorine, bromine, and iodine atoms in the atmosphere. Moreover, the results highlight the peculiar feature of CH{sub 2}F{sub 2} as a source of both fluorine and hydrogen atoms and the characteristic formation of I{sub 2}{sup +} and CH{sub 2}{sup +} ions from the photofragmentation of the CH{sub 2}I{sub 2} molecule.

  18. Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

    International Nuclear Information System (INIS)

    Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

    2010-01-01

    Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

  19. Performances of low-dose dual-energy CT in reducing artifacts from implanted metallic orthopedic devices

    Energy Technology Data Exchange (ETDEWEB)

    Filograna, Laura [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Institute of Radiology, Rome (Italy); University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland); Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Institute of Radiology, Rome (Italy); De Waure, Chiara; Calabro, Giovanna Elisa [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Research Centre for Health Technology Assessment, Department of Public Health, Section of Hygiene, Rome (Italy); Finkenstaedt, Tim [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Thali, Michael John [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland)

    2016-07-15

    The objective was to evaluate the performances of dose-reduced dual-energy computed tomography (DECT) in decreasing metallic artifacts from orthopedic devices compared with dose-neutral DECT, dose-neutral single-energy computed tomography (SECT), and dose-reduced SECT. Thirty implants in 20 consecutive cadavers underwent both SECT and DECT at three fixed CT dose indexes (CTDI): 20.0, 10.0, and 5.0 mGy. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV, and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. In each group, the image quality of the seven monoenergetic images and of the SECT image was assessed qualitatively and quantitatively by visually rating and by measuring the maximum streak artifact respectively. The comparison between SECT and OPTkeV evaluated overall within all groups showed a significant difference (p <0.001), with OPTkeV images providing better images. Comparing OPTkeV with the other DECT images, a significant difference was shown (p <0.001), with OPTkeV and 130-keV images providing the qualitatively best results. The OPTkeV images of 5.0-mGy acquisitions provided percentages of images with scores 1 and 2 of 36 % and 30 % respectively, compared with 0 % and 33.3 % of the corresponding SECT images of 10- and 20-mGy acquisitions. Moreover, DECT reconstructions at the OPTkeV of the low-dose group showed higher CT numbers than the SECT images of dose groups 1 and 2. This study demonstrates that low-dose DECT permits a reduction of artifacts due to metallic implants to be obtained in a similar manner to neutral-dose DECT and better than reduced or neutral-dose SECT. (orig.)

  20. Ion implantation

    International Nuclear Information System (INIS)

    Dearnaley, Geoffrey

    1975-01-01

    First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

  1. Total photoabsorption cross section on nuclei measured in energy range 0.5-2.6 GeV

    International Nuclear Information System (INIS)

    Mirazita, M.

    1998-03-01

    The total photoabsorption cross section on several nuclei has been measured in the energy range 0.5 - 2.6 GeV. Nuclear data show a significant reduction of the absorption strength with respect to the free nucleon case suggesting a shadowing effect at low energies

  2. Calibration of a large multi-element neutron counter in the energy range 85-430 MeV

    CERN Document Server

    Strong, J A; Esterling, R J; Garvey, J; Green, M G; Harnew, N; Jane, M R; Jobes, M; Mawson, J; McMahon, T; Robertson, A W; Thomas, D H

    1978-01-01

    Describes the calibration of a large 60 element neutron counter with a threshold of 2.7 MeV equivalent electron energy. The performance of the counter has been measured in the neutron kinetic energy range 8.5-430 MeV using a neutron beam at the CERN Synchrocyclotron. The results obtained for the efficiency as a function of energy are in reasonable agreement with a Monte Carlo calculation. (7 refs).

  3. Alternative separation of exchange and correlation energies in multi-configuration range-separated density-functional theory.

    Science.gov (United States)

    Stoyanova, Alexandrina; Teale, Andrew M; Toulouse, Julien; Helgaker, Trygve; Fromager, Emmanuel

    2013-10-07

    The alternative separation of exchange and correlation energies proposed by Toulouse et al. [Theor. Chem. Acc. 114, 305 (2005)] is explored in the context of multi-configuration range-separated density-functional theory. The new decomposition of the short-range exchange-correlation energy relies on the auxiliary long-range interacting wavefunction rather than the Kohn-Sham (KS) determinant. The advantage, relative to the traditional KS decomposition, is that the wavefunction part of the energy is now computed with the regular (fully interacting) Hamiltonian. One potential drawback is that, because of double counting, the wavefunction used to compute the energy cannot be obtained by minimizing the energy expression with respect to the wavefunction parameters. The problem is overcome by using short-range optimized effective potentials (OEPs). The resulting combination of OEP techniques with wavefunction theory has been investigated in this work, at the Hartree-Fock (HF) and multi-configuration self-consistent-field (MCSCF) levels. In the HF case, an analytical expression for the energy gradient has been derived and implemented. Calculations have been performed within the short-range local density approximation on H2, N2, Li2, and H2O. Significant improvements in binding energies are obtained with the new decomposition of the short-range energy. The importance of optimizing the short-range OEP at the MCSCF level when static correlation becomes significant has also been demonstrated for H2, using a finite-difference gradient. The implementation of the analytical gradient for MCSCF wavefunctions is currently in progress.

  4. A Study of Mutation Breeding of High-Yielding Tryptophanase Escherichia coli by Low-Energy N+ Ion Beam Implantation

    International Nuclear Information System (INIS)

    Pang Min; Yao Jianming; Wang Dongmei

    2009-01-01

    Low energy ion beam has been widely applied in microbe breeding, plant breeding, gene transfer and cell modification. In this study, the Escherichia coli (E.coli) strain producing tryptophanase was irradiated by a low energy nitrogen ion beam with an energy of 10 keV at a fluence of 13 x 10 14 N + /cm 2 when glycerin at a 15% concentration was used as a protector. The effect on the biomass of E. coli after N + implantation was analyzed in detail by statistic methods. The screening methods used in this study were proven to be effective. After continuous mutagenicity, a high-yield tryptophanase strain was selected and both its biomass and enzymatic activity were higher than those of the parent strain. The results of scale-up production showed that the biomass could reach wet weight 8.2 g/L and 110 g L-tryptophan could be formed in the volume of the 1l enzymatic reaction system.

  5. The implantation of a PV electric energy generation system at the Saint Peter and Saint Paul islands

    Energy Technology Data Exchange (ETDEWEB)

    Galdino, Marco Antonio; Silva, Patricia de Castro da [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil)], E-mail: marcoag@cepel.br; Souza, Marco Antonio Carvalho [Secretaria da Comissao Interministerial para os Recursos do Mar (SECIRM), Brasilia, DF (Brazil)

    2009-07-01

    The Saint Peter and Saint Paul Islands are located at 0 degree 55.00' N and 29 degree 20.76'' W, at a distance of circa 550 M (nautical miles) NE from the City of Natal, RN (Northeast Region of Brazil), and comprises of many small islands and rocks of igneous plutonic origin. In 1998, a first Scientific Station was built in order to receive researchers involved in several projects. The CEPEL, as responsible by the electrical energy supply to the Scientific Station; designed and installed a PV electric energy generation system which had a power of 3.6 kWp. This system operated successfully for the last 10 years, suffering frequent maintenance. In 2006, a new design for the Scientific Station has been started aiming to improve its resources and safety. The new PV system has a maximum power of 7.8 kWp, and employs an updated technology (SMA, Germany). The equipment was integrated and submitted to intensive testing at facilities of CEPEL, and was installed and commissioned at the Islands in June 2008. Since the installation, the equipment has been operating as required, meeting the energy and water demand of the Station. The present paper describes the many steps involved in the implantation of the PV system at the Scientific Station. (author)

  6. Ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Gusev, V.; Gusevova, M.

    1980-01-01

    The historical development is described of the method of ion implantation, the physical research of the method, its technological solution and practical uses. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material, ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions. (M.S.)

  7. Ion implantation in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, V; Gusevova, M

    1980-06-01

    The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.

  8. Influence of coated particle structure in thermal neutron spectrum energy range

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, U; Teuchert, E

    1971-02-15

    The heterogenity due to lumping the fuel in coated particles affects the thermal neutron spectrum. A calculation model is discussed which, apart from some simplifying assumptions about the statistical distribution, allows a rigorous computation of effective cross sections for all nuclides of the heterogeneous medium. It is based on an exact computation of the neutron penetration probability through coating and kernel. The model is incorporated in a THERMOS-code providing a double heterogeneous cell calculation, which can be repeated automatically at different time steps in the depletion code system MAFIA-V.S.O.P.. A discussion of the effects of the coated particle structure is given by a comparison of calculations for heterogeneous and homogeneous fuel zones in pebble bed reactor elements. This is performed for enriched UO{sub 2} fuel and for a ThO{sub 2}-PuO{sub 2} mixture in the grains. Depending on the energy dependent total sigmas in the kernels the changes of the cross sections are ranging from 0.1% up to 45%. The influence on the spectrum averaged sigmas of the nuclides in the fresh UO{sub 2} fuel is lower than 1%. For the emerging {sup 240}Pu it increases up to 3.3% during irradiation. For the ThO{sub 2}-PuO{sub 2} fuel the averaged sigmas of the isotopes vary from 0.5% to 5.7% depending on the state of irradiation. Correspondingly there is an influence on the plutonium isotopic composition, on breeding ratios, and on the tilt of k{sub eff} during burnup which will be discussed in detail.

  9. Implanting very low energy atomic ions into surface adsorbed cage molecules: the formation/emission of Cs/C60+

    International Nuclear Information System (INIS)

    Kolodney, Eli; Kaplan, Andrey; Manor, Yoni; Bekkerman, Anatoly; Tsipinyuk, Boris

    2004-01-01

    Full Text: We demonstrate the formation of an endo-complex via a collision of energetic ions with molecular overlayers on a surface. An incoming atomic ion is encapsulated inside a very large molecule or cluster by implanting the primary ion into the target species, which then recovers its original structure or rearrange itself around the implanted ion in some stable configuration. Here we describe an experiment resulting in the formation and ejection of an endo-complex, within a single collision. We study the formation and emission of endohedral fullerenes, Cs/C 60 + and Cs/C 70 + , following a single collision of Cs + ion with a sub-monolayer of C 60 (steady state coverage) on gold and silicon surfaces and with a sub-monolayer of C 70 on gold. A continuous low energy (E 0 =35-220 eV) Cs + ion beam hit the Cs + covered surface and the collisional formation and ejection of the endohedral Cs/Cs 60 + complex, within a single Cs + /C 60 collision was observed and characterized. Several experimental observations clearly demonstrate the single collision nature of the combined atom penetration endo-complex ejection event. The fullerene molecule is actually being picked up off the surface by the penetrating Cs + ion. The evidence for the trapping of the Cs + ion inside the fullerene cage is given both by the appearance of the Cs/Cs (602-2n) + (n=1-5) sequence and its termination at Cs/Cs 50 + . Kinetic Energy Distributions (KEDs) of the outgoing Cs/Cs 60 + were measured for two different Cs + impact energies under field-free conditions. The most striking observation is the near independence of the KEDs on the impact energy. Both KEDs peak around 1.2 eV with similar line shapes. A simple model for the formation/ejection/fragmentation dynamics of the endohedral complex is proposed and is found to be in good agreement with the experimental results

  10. SU-G-TeP1-02: Analytical Stopping Power and Range Parameterization for Therapeutic Energy Intervals

    Energy Technology Data Exchange (ETDEWEB)

    Donahue, W [Louisiana State University, Baton Rouge, LA (United States); Newhauser, W [Louisiana State University, Baton Rouge, LA (United States); Mary Bird Perkins Cancer Center, Baton Rouge, LA (United States); Ziegler, J F [United States Naval Academy, Annapolis, MD (United States)

    2016-06-15

    Purpose: To develop a simple, analytic parameterization of stopping power and range, which covers a wide energy interval and is applicable to many species of projectile ions and target materials, with less than 15% disagreement in linear stopping power and 1 mm in range. Methods: The new parameterization was required to be analytically integrable from stopping power to range, and continuous across the range interval of 1 µm to 50 cm. The model parameters were determined from stopping power and range data for hydrogen, carbon, iron, and uranium ions incident on water, carbon, aluminum, lead and copper. Stopping power and range data was taken from SRIM. A stochastic minimization algorithm was used to find model parameters, with 10 data points per energy decade. Additionally, fitting was performed with 2 and 26 data points per energy decade to test the model’s robustness to sparse Results: 6 free parameters were sufficient to cover the therapeutic energy range for each projectile ion species (e.g. 1 keV – 300 MeV for protons). The model agrees with stopping power and range data well, with less than 9% relative stopping power difference and 0.5 mm difference in range. As few as, 4 bins per decade were required to achieve comparable fitting results to the full data set. Conclusion: This study successfully demonstrated that a simple analytic function can be used to fit the entire energy interval of therapeutic ion beams of hydrogen and heavier elements. Advantages of this model were the small number (6) of free parameters, and that the model calculates both stopping power and range. Applications of this model include GPU-based dose calculation algorithms and Monte Carlo simulations, where available memory is limited. This work was supported in part by a research agreement between United States Naval Academy and Louisiana State University: Contract No N00189-13-P-0786. In addition, this work was accepted for presentation at the American Nuclear Society Annual Meeting

  11. SU-G-TeP1-02: Analytical Stopping Power and Range Parameterization for Therapeutic Energy Intervals

    International Nuclear Information System (INIS)

    Donahue, W; Newhauser, W; Ziegler, J F

    2016-01-01

    Purpose: To develop a simple, analytic parameterization of stopping power and range, which covers a wide energy interval and is applicable to many species of projectile ions and target materials, with less than 15% disagreement in linear stopping power and 1 mm in range. Methods: The new parameterization was required to be analytically integrable from stopping power to range, and continuous across the range interval of 1 µm to 50 cm. The model parameters were determined from stopping power and range data for hydrogen, carbon, iron, and uranium ions incident on water, carbon, aluminum, lead and copper. Stopping power and range data was taken from SRIM. A stochastic minimization algorithm was used to find model parameters, with 10 data points per energy decade. Additionally, fitting was performed with 2 and 26 data points per energy decade to test the model’s robustness to sparse Results: 6 free parameters were sufficient to cover the therapeutic energy range for each projectile ion species (e.g. 1 keV – 300 MeV for protons). The model agrees with stopping power and range data well, with less than 9% relative stopping power difference and 0.5 mm difference in range. As few as, 4 bins per decade were required to achieve comparable fitting results to the full data set. Conclusion: This study successfully demonstrated that a simple analytic function can be used to fit the entire energy interval of therapeutic ion beams of hydrogen and heavier elements. Advantages of this model were the small number (6) of free parameters, and that the model calculates both stopping power and range. Applications of this model include GPU-based dose calculation algorithms and Monte Carlo simulations, where available memory is limited. This work was supported in part by a research agreement between United States Naval Academy and Louisiana State University: Contract No N00189-13-P-0786. In addition, this work was accepted for presentation at the American Nuclear Society Annual Meeting

  12. A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

    Science.gov (United States)

    Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

    2012-08-01

    We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

  13. Structural and compositional characterization of X-cut LiNbO3 crystals implanted with high energy oxygen and carbon ions

    International Nuclear Information System (INIS)

    Bentini, G.G.; Bianconi, M.; Cerutti, A.; Chiarini, M.; Pennestri, G.; Sada, C.; Argiolas, N.; Bazzan, M.; Mazzoldi, P.; Guzzi, R.

    2005-01-01

    High energy implantation of medium-light elements such as oxygen and carbon was performed in X-cut LiNbO 3 single crystals in order to prepare high quality optical waveguides. The compositional and damage profiles, obtained by exploiting the secondary ion mass spectrometry and Rutherford back-scattering techniques respectively, were correlated to the structural properties measured by the high resolution X-ray diffraction. This study evidences the development of tensile strain induced by the ion implantation that can contribute to the decrease of the ordinary refractive index variation through the photo-elastic effect

  14. Finite Range Effects in Energies and Recombination Rates of Three Identical Bosons

    DEFF Research Database (Denmark)

    Sørensen, Peder Klokmose; V. Fedorov, D.; S. Jensen, A.

    2013-01-01

    is large. The models are built on contact potentials which take into account finite range effects; one is a two-channel model and the other is an effective range expansion model implemented through the boundary condition on the three-body wave function when two of the particles are at the same point...... in space. We compare the results with the results of the ubiquitous single-parameter zero-range model where only the scattering length is taken into account. Both finite range models predict variations of the well-known geometric scaling factor 22.7 that arises in Efimov physics. The threshold value...... at negative scattering length for creation of a bound trimer moves to higher or lower values depending on the sign of the effective range compared to the location of the threshold for the single-parameter zero-range model. Large effective ranges, corresponding to narrow resonances, are needed...

  15. Subwavelength dielectric nanorod chains for energy transfer in the visible range.

    Science.gov (United States)

    Li, Dongdong; Zhang, Jingjing; Yan, Changchun; Xu, Zhengji; Zhang, Dao Hua

    2017-10-15

    We report a new type of energy transfer device, formed by a dielectric nanorod array embedded in a silver slab. Such dielectric chain structures allow surface plasmon wave guiding with large propagation length and highly suppressed crosstalk between adjacent transmission channels. The simulation results show that our proposed design can be used to enhance the energy transfer along the waveguide-like dielectric nanorod chains via coupled plasmons, where the energy spreading is effectively suppressed, and superior imaging properties in terms of resolution and energy transfer distance can be achieved.

  16. The influence of ion implantation on the surface properties of metals and alloys

    International Nuclear Information System (INIS)

    Grant, W.A.; Carter, G.

    1975-10-01

    The report falls into three sections: (1) annealing behaviour of high dose rare gas (Ne, Ar, Kr, Xe) implantations into silicon; (2) measurement of projected and lateral range parameters for low energy heavy ions (Ar, Cu, Kr, Cd, Xe, Cs, Dy, W, Au, Pb, Bi) in silicon by Rutherford backscattering; (3) surface chemistry of ion implanted solids (e.g. corrosion, catalysis, oxidation, synthesis of compounds in ion implanted layers). (U.K.)

  17. Total cross sections for electron scattering by CO2 molecules in the energy range 400 endash 5000 eV

    International Nuclear Information System (INIS)

    Garcia, G.; Manero, F.

    1996-01-01

    Total cross sections for electron scattering by CO 2 molecules in the energy range 400 endash 5000 eV have been measured with experimental errors of ∼3%. The present results have been compared with available experimental and theoretical data. The dependence of the total cross sections on electron energy shows an asymptotic behavior with increasing energies, in agreement with the Born-Bethe approximation. In addition, an analytical formula is provided to extrapolate total cross sections to higher energies. copyright 1996 The American Physical Society

  18. Nonlinear ionization of many-electron systems over a broad photon-energy range

    International Nuclear Information System (INIS)

    Karamatskou, Antonia

    2015-11-01

    Rapid developments in laser technology and, in particular, the advances in the realm of free-electron lasers have initiated tremendous progress in both theoretical and experimental atomic, molecular and optical physics. Owing to high intensities in combination with short pulse durations we can enter the utterly nonlinear regime of light-matter interaction and study the dynamics and features of matter under extreme conditions. The capabilities of X-ray free-electron laser sources have promoted the importance of nonlinear optics also in the X-ray regime. I show in my thesis how we can exploit the nonlinear response regime to reveal hidden information about resonance structures that are not resolved in the weak-field regime. This prospect points to many applications for future investigations of various complex systems with free-electron lasers. In the present thesis the interaction of atomic closed-shell systems with ultrashort and strong laser pulses is investigated. Over a broad photon-energy range the characteristics of the atomic shell are studied with a particular focus on the nonlinear response regime and on electron correlation effects. Several computational extensions of the XCID package for multi-electron dynamics are presented and their applications in various studies are demonstrated; a completely new capability of the numerical method is realized by implementing the calculation of photoelectron spectra and by calculating eigenstates of the many-electron Hamiltonian. The field of study within the present work encompasses (1) the strong-field regime, where the question of the adiabatic character in tunneling ionization is discussed and analyzed, especially for the case of few-cycle pulses; (2) the XUV regime, in which we show for the first time that the collectivity in resonant excitation reveals new information; and (3) the (hard) x-ray regime, which is highly relevant for x-ray free-electron laser experiments, and where we show how important two

  19. Preliminary Performance Evaluation of MEMS-based Piezoelectric Energy Harvesters in Extended Temperature Range

    DEFF Research Database (Denmark)

    Xu, R.; Borregaard, L.M.; Lei, A.

    2012-01-01

    In this work a batch of MEMS-based vibration energy harvesters consisting of a silicon/PZT thick film ntilever with integrated proof mass is characterized. The purpose of a vibration energy harvester is to convert low grade vibrations to useful electrical power. Optimally, the natural frequency...

  20. Strategy and perspective on future energy systems, technological range potentials for gas cooled reactors

    International Nuclear Information System (INIS)

    Bouchard, J.; Bernard, P.; Pochon, E.

    2002-01-01

    Over the past century, energy consumption worldwide has increased more than ten-fold and, by the year 2050, is likely to be twice what it is today. This increase of energy demand seems inescapable, in view of the growth of the world population and the right to energy access and development for all countries around the world. The pursuit of energy production in the current conditions, essentially based on fossil fuels, would result in the depletion of all the known oil and gas sources in the world with the risks of scarcity of supply. The economies of many countries, particularly countries who do not have natural fossil resources, could suffer under hardships and uncertainties relating to the oil and gas prices. Another consequence would be a doubling of the annual emissions of greenhouse gases by the year 2050 with its consequences over climate change. Energy savings and renewable energy sources shall contribute to avoid such risks, however it will not be enough, by far, to meet the energy consumption of 9 billion inhabitants across the planet. Nuclear energy has unique advantages as to sustainable development, and could offer a safe and economic solution, with long-term resources and no greenhouse effect

  1. Physics of reflective optics for the soft gamma-ray photon energy range

    DEFF Research Database (Denmark)

    Fernández-Perea, Mónica; Descalle, Marie-Anne; Soufli, Regina

    2013-01-01

    Traditional multilayer reflective optics that have been used in the past for imaging at x-ray photon energies as high as 200 keV are governed by classical wave phenomena. However, their behavior at higher energies is unknown, because of the increasing effect of incoherent scattering and the disag...

  2. Cost of living in free-ranging degus (Octodon degus) : seasonal dynamics of energy expenditure

    NARCIS (Netherlands)

    Bozinovic, F; Bacigalupe, LD; Vasquez, RA; Visser, GH; Veloso, C; Kenagy, GJ

    Animals process and allocate energy at different seasons at variable rates, depending on their breeding season and changes in environmental conditions and resulting physiological demands. Overall total energy expenditure, in turn, should either increase in some seasons due to special added demands

  3. Amorphous surface layers in Ti-implanted Fe

    International Nuclear Information System (INIS)

    Knapp, J.A.; Follstaedt, D.M.; Picraux, S.T.

    1979-01-01

    Implanting Ti into high-purity Fe results in an amorphous surface layer which is composed of not only Fe and Ti, but also C. Implantations were carried out at room temperature over the energy range 90 to 190 keV and fluence range 1 to 2 x 10 16 at/cm 2 . The Ti-implanted Fe system has been characterized using transmission electron microscopy (TEM), ion backscattering and channeling analysis, and (d,p) nuclear reaction analysis. The amorphous layer was observed to form at the surface and grow inward with increasing Ti fluence. For an implant of 1 x 10 17 Ti/cm 2 at 180 keV the layer thickness was 150 A, while the measured range of the implanted Ti was approx. 550 A. This difference is due to the incorporation of C into the amorphous alloy by C being deposited on the surface during implantation and subsequently diffusing into the solid. Our results indicate that C is an essential constituent of the amorphous phase for Ti concentrations less than or equal to 10 at. %. For the 1 x 10 17 Ti/cm 2 implant, the concentration of C in the amorphous phase was approx. 25 at. %, while that of Ti was only approx. 3 at. %. A higher fluence implant of 2 x 10 17 Ti/cm 2 produced an amorphous layer with a lower C concentration of approx. 10 at. % and a Ti concentration of approx. 20 at. %

  4. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

  5. Low-energy modes and medium-range correlated motions in Pd79Ge21 alloy glass

    International Nuclear Information System (INIS)

    Shibata, Kaoru; Mizuseki, Hiroshi; Suzuki, Kenji

    1993-01-01

    It is well known that there are excess modes over the sound wave in low energy region below about 10 meV in glass materials, which do not exist in corresponding crystalline materials. We examined the low energy modes in a Pd 79 Ge 21 alloys glass by means of inelastic neutron scattering. Measurements were performed on the crystal analyzer type time-of-flight spectrometer LAM-40 with PG(002) and Ge(311) analyzer mirror, which is installed at KENS. The dynamic structure factor S(Q,ω) was obtained over the wide momentum range from 0.5 to 5.2A -1 . The measured S(Q,ω)'s have almost same momentum (Q) dependence at each energy (ℎω) in the energy range from 2.0 to 8.0 meV. In the energy region below 3 meV, we found a small shoulder peak at Q = 1.7A -1 in the momentum dependence of S(Q,ω). It corresponds to a prepeak in S(Q). Therefore it is concluded that the low energy modes in Pd 79 Ge 21 alloy glass is mainly contributed from medium-range correlated motions in the cluster consisting of a few chemical short-range structure units of Pd 6 Ge trigonal prism. (author)

  6. High-energy ion implantation of polymeric fibers for modification of reinforcement-matrix adhesion

    International Nuclear Information System (INIS)

    Grummon, D.S.; Schalek, R.; Ozzello, A.; Kalantar, J.; Drzal, L.T.

    1991-01-01

    We have previously reported on the effect of high-energy ion irradiation of ultrahigh molecular weight polyethylene (UHMW-PE), and Kevlar-49 polyaramid fibers, on fiber-matrix adhesion and interfacial shear strength (ISS) in epoxy matrix composites. Irradiation of UHMW-PE fibers produced large improvements in interfacial shear strength, without degrading fiber tensile strength. ISS was not generally affected in irradiated Kevlar-49, and fiber tensile strength decreased. The divergence in response between polyaramid and polyethylene relates both to differences in the mesoscopic structure of the individual fibers, and to the different forms of beam induced structural modification favored by the individual polymer chemistries. Here we report results of surface energy measurements, infrared spectroscopy analysis, and X-ray photoelectron spectroscopy studies on UHMW-PE and polyaramid fibers, irradiated to fluences between 2x10 12 and 5x10 15 cm -2 with N + , Ar + , Ti + , Na + , and He + at energies between 30 and 400 keV. UHMW-PE fibers showed a pronounced increase in the polar component of surface energy which could be associated with carbonyl, hydroxyl and hydroperoxide groups at the surface. Kevlar, on the other hand, tended toward carbonization and showed a decrease in nitrogen and oxygen concentrations and a sharp drop in polar surface energy. (orig.)

  7. How does Germany's green energy policy affect electricity market volatility? An application of conditional autoregressive range models

    International Nuclear Information System (INIS)

    Auer, Benjamin R.

    2016-01-01

    Based on a dynamic model for the high/low range of electricity prices, this article analyses the effects of Germany's green energy policy on the volatility of the electricity market. Using European Energy Exchange data from 2000 to 2015, we find rather high volatility in the years 2000–2009 but also that the weekly price range has significantly declined in the period following the year 2009. This period is characterised by active regulation under the Energy Industry Law (EnWG), the EU Emissions Trading Directive (ETD) and the Renewable Energy Law (EEG). In contrast to the preceding period, price jumps are smaller and less frequent (especially for day-time hours), implying that current policy measures are effective in promoting renewable energies while simultaneously upholding electricity market stability. This is because the regulations strive towards a more and more flexible and market-oriented structure which allows better integration of renewable energies and supports an efficient alignment of renewable electricity supply with demand. - Highlights: • We estimate a CARR model for German electricity price data. • We augment the model by dummies capturing important regulations. • We find a significant decline in the price range after the year 2009. • This implies effective price stabilisation by German energy policy.

  8. Study on rice transformation mediated by low energy ion beam implantation

    International Nuclear Information System (INIS)

    Li Hong; Wu Lifang; Yu Zengliang

    2001-01-01

    Delivery of foreign DNA into rice via ion beam was first reported in 1994. In recent years we have aimed to set up efficient transformation system mediated by low energy ion beam. The factors that influence the transformation including type of ion, parameters of ion energy, dose and dose rate, plant genotype, composition of media, concentration of hormones and antibiotics were carefully investigated. Treated with 25ke V Ar + , the transformation efficiencies of the mature embryos of rice variety 02428, Hua pei94-jian-09 and Minghui63 reached 11%, 11.4% and 7.1% measured by produced antibiotic resistant callus and l.52%, 1.87% and l.13% measured by regenerated plants respectively. PCR detection and Southern blot analysis showed that GUS report gene had inserted in rice genome. Low energy ion beam mediated gene transfer will be extended to other cereal recalcitrant to Agrobacterium tumefaciens as soon as methodological parameters were optimized. (authors)

  9. Energy transmission and power sources for mechanical circulatory support devices to achieve total implantability.

    Science.gov (United States)

    Wang, Jake X; Smith, Joshua R; Bonde, Pramod

    2014-04-01

    Left ventricular assist device therapy has radically improved congestive heart failure survival with smaller rotary pumps. The driveline used to power today's left ventricular assist devices, however, continues to be a source of infection, traumatic damage, and rehospitalization. Previous attempts to wirelessly power left ventricular assist devices using transcutaneous energy transfer systems have been limited by restrictions on separation distance and alignment between the transmit and receive coils. Resonant electrical energy transfer allows power delivery at larger distances without compromising safety and efficiency. This review covers the efforts to wirelessly power mechanical circulatory assist devices and the progress made in enhancing their energy sources. Copyright © 2014 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

  10. Tables of range and rate of energy loss of charged particles of energy 0,5 to 150 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, C; Boujot, J P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1962-07-01

    The accurate knowledge of ranges and rates of energy loss of charged particles is very important for physicists working with nuclear accelerators. The tabulations of Aron, Hoffmann, and Williams and later of Madey and Rich have proved extremely useful. However, recent experimental range measurements have indicated the need for a new tabulation of the range-energy relation. It was felt that a useful purpose would be served by performing the calculations for a large number of stopping materials distributed throughout the periodic table, including the materials most commonly used as targets, detectors, and entrance foils. (authors)

  11. On the energy emission by a Kerr black hole in the superradiant range

    International Nuclear Information System (INIS)

    Curir, A.

    1985-01-01

    A new redefined ''Unruh vacuum'' has been used in order to obtain the thermal Hawkin emission in a Kerr geometry in the superradiant range. It is also shown that a new type of vacuum is needed to obtain the global emission from a rotating black hole in the superradiant range. The formula describing such global emission is given. (orig.)

  12. Radiation of transient high-current arcs: energy measurements in the optical range

    International Nuclear Information System (INIS)

    Bauchire, J M; Hong, D; Rabat, H; Riquel, G

    2012-01-01

    When no protection is used, the radiation emitted by a high-power electric arc can be dangerous for the eyes and the skin of a person. To ensure effective protection, it is first necessary to know the energy emitted by such arcs. The aim of our work was to experimentally determine the energy emitted by high-current (from 4 to 40 kA) transient arcs, for two different (10 cm and 2 m) lengths and for electrodes in copper or steel. These experiments enabled the radiative energy of the arcs to be quantified and also showed the influence of metal vapors in the spectral distribution of the radiation.

  13. Search for Long-Range Correlations in Relativistic Heavy-Ion Collisions at SPS Energies

    Directory of Open Access Journals (Sweden)

    Shakeel Ahmad

    2015-01-01

    Full Text Available Long-range correlations are searched for by analysing the experimental data on 16O-AgBr and 32S-AgBr collisions at 200 A GeV/c and the results are compared with the predictions of a multi phase transport (AMPT model. The findings reveal that the observed forward-backward (F-B multiplicity correlations are mainly of short range in nature. The range of F-B correlations are observed to extend with increasing projectile mass. The observed extended range of F-B correlations might be due to overall multiplicity fluctuations arising because of nuclear geometry. The findings are not sufficient for making any definite conclusions regarding the presence of long-range correlations.

  14. Development of a picture of the van der Waals interaction energy between clusters of nanometer-range particles

    International Nuclear Information System (INIS)

    Arunachalam, V.; Marlow, W.H.; Lu, J.X.

    1998-01-01

    The importance of the long-range Lifshitz-van der Waals interaction energy between condensed bodies is well known. However, its implementation for interacting bodies that are highly irregular and separated by distances varying from contact to micrometers has received little attention. As part of a study of collisions of irregular aerosol particles, an approach based on the Lifshitz theory of van der Waals interaction has been developed to compute the interaction energy between a sphere and an aggregate of spheres at all separations. In the first part of this study, the iterated sum-over-dipole interactions between pairs of approximately spherical molecular clusters are compared with the Lifshitz and Lifshitz-Hamaker interaction energies for continuum spheres of radii equal to those of the clusters' circumscribed spheres and of the same masses as the clusters. The Lifshitz energy is shown to converge to the iterated dipolar energy for quasispherical molecular clusters for sufficiently large separations, while the energy calculated by using the Lifshitz-Hamaker approach does not. Next, the interaction energies between a contacting pair of these molecular clusters and a third cluster in different relative positions are calculated first by coupling all molecules in the three-cluster system and second by ignoring the interactions between the molecules of the adhering clusters. The error calculated by this omission is shown to be very small, and is an indication of the error in computing the long-range interaction energy between a pair of interacting spheres and a third sphere as a simple sum over the Lifshitz energies between individual, condensed-matter spheres. This Lifshitz energy calculation is then combined with the short-separation, nonsingular van der Waals energy calculation of Lu, Marlow, and Arunachalam, to provide an integrated picture of the van der Waals energy from large separations to contact. copyright 1998 The American Physical Society

  15. Listening to Brain Microcircuits for Interfacing With External World-Progress in Wireless Implantable Microelectronic Neuroengineering Devices: Experimental systems are described for electrical recording in the brain using multiple microelectrodes and short range implantable or wearable broadcasting units.

    Science.gov (United States)

    Nurmikko, Arto V; Donoghue, John P; Hochberg, Leigh R; Patterson, William R; Song, Yoon-Kyu; Bull, Christopher W; Borton, David A; Laiwalla, Farah; Park, Sunmee; Ming, Yin; Aceros, Juan

    2010-01-01

    Acquiring neural signals at high spatial and temporal resolution directly from brain microcircuits and decoding their activity to interpret commands and/or prior planning activity, such as motion of an arm or a leg, is a prime goal of modern neurotechnology. Its practical aims include assistive devices for subjects whose normal neural information pathways are not functioning due to physical damage or disease. On the fundamental side, researchers are striving to decipher the code of multiple neural microcircuits which collectively make up nature's amazing computing machine, the brain. By implanting biocompatible neural sensor probes directly into the brain, in the form of microelectrode arrays, it is now possible to extract information from interacting populations of neural cells with spatial and temporal resolution at the single cell level. With parallel advances in application of statistical and mathematical techniques tools for deciphering the neural code, extracted populations or correlated neurons, significant understanding has been achieved of those brain commands that control, e.g., the motion of an arm in a primate (monkey or a human subject). These developments are accelerating the work on neural prosthetics where brain derived signals may be employed to bypass, e.g., an injured spinal cord. One key element in achieving the goals for practical and versatile neural prostheses is the development of fully implantable wireless microelectronic "brain-interfaces" within the body, a point of special emphasis of this paper.

  16. The desorption behaviour of implanted noble gases at low energy on silicon surfaces

    NARCIS (Netherlands)

    Holtslag, A.H.M.; van Silfhout, Arend

    1987-01-01

    Under UHV conditions, clean crystalline Si(111) surfaces have been bombarded mass-selectively at room temperature with noble gas ions, Ne+, Ar+, Kr+, at normal incidence. By means of stepwise heating up to 1050 K the activation energies and desorbed doses of the noble gases have been straight

  17. Investigation of Deuterium Implantation into Beryllium Sample by Electron Energy Loss Spectroscopy

    Science.gov (United States)

    Afanas'ev, V. P.; Gryazev, A. S.; Kaplya, P. S.; Köppen, M.; Ridzel, O. Yu; Subbotin, N. Yu; Hansen, P.

    2017-11-01

    Quantitative analysis of hydrogen isotopes in first wall as well as in construction materials of future fusion devices plays a crucial role to understand the evolution of those materials under operation conditions. A quantitative understanding of hydrogen in materials is also an important issue for storing energy as well as for fuel cells. A combination of Electron Energy Loss Spectroscopy (EELS) and Elastic Peak Electron Spectroscopy (EPES) is presented in this study to tackle these problems of modern material research for energy production and storage. Accurate inelastic scattering background subtraction is a key part of the presented quantitative measurement of the Be/D ratio. The differential inelastic scattering cross-section is determined by the fitting procedure. The fitting procedure is based on the iterative solution of the direct problem and minimization of the residual between computed and measured spectra. This study also takes into account the difference in electron energy loss laws for surface and bulk. The inelastic scattering cross-sections for different doses of deuterium ions in beryllium substrate (5.5·1021 m-2 and 2.01·1022 m-2) were defined in a two-layered model. The analysis is carried out for the EELS spectra. Relative concentration of D atoms is defined.

  18. Range-energy relations and stopping power of water, water vapour and tissue equivalent liquid for α particles over the energy range 0.5 to 8 MeV

    International Nuclear Information System (INIS)

    Palmer, R.B.J.; Akhavan-Rezayat, Ahmad

    1978-01-01

    Experimental range-energy relations are presented for alpha particles in water, water vapour and tissue equivalent liquid at energies up to 8 MeV. From these relations differential stopping powers are derived at 0.25 MeV energy intervals. Consideration is given to sources of error in the range-energy measurements and to the uncertainties that these will introduce into the stopping power values. The ratio of the differential stopping power of muscle equivalent liquid to that of water over the energy range 0.5 to 7.5 MeV is discussed in relation to the specific gravity and chemical composition of the muscle equivalent liquid. Theoretical molecular stopping power calculations based upon the Bethe formula are also presented for water. The effect of phase upon the stopping power of water is discussed. The molecular stopping power of water vapour is shown to be significantly higher than that of water for energies below 1.25 MeV and above 2.5 MeV, the ratio of the two stopping powers rising to 1.39 at 0.5 MeV and to 1.13 at 7.0 MeV. Stopping power measurements for other liquids and vapours are compared with the results for water and water vapour and some are observed to have stopping power ratios in the vapour and liquid phases which vary with energy in a similar way to water. It is suggested that there may be several factors contributing to the increased stopping power of liquids. The need for further experimental results on a wider range of liquids is stressed

  19. Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

    Energy Technology Data Exchange (ETDEWEB)

    Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

    2017-06-15

    MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

  20. Analysis of the low energy neutron inelastic scattering in mass range 48≤A≤64

    International Nuclear Information System (INIS)

    Cabezas, R.; Lubian, J.; Tomas, J.

    1990-04-01

    An analysis of low energy neutron inelastic scattering in medium-mass nuclei is made. A regional deformed optical model parameterization is proposed to describe the experimental data. This parameterization is derived from titanium, chromium, iron and nickel isotopes in the energy region of 1-3 MeV. A combined use of the coupled channel method and the statistical Hauser-Feshbach theory including corrections due to the presence of direct processes is applied. It is shown that, in the frame of this parameterization, it is possible to describe adequately experimental angular distributions, integral and total cross sections. An extrapolation to the energy region higher than 3 MeV is made. It is also shown, that this parameterization can be extended to other neighbour nuclei like zinc isotopes 64,66,68 Zn. (author). 41 refs, 44 figs

  1. Scaling and charge ratio in the energy range 1-10 TeV

    International Nuclear Information System (INIS)

    Baradzej, L.T.; Kanevskaya, E.A.; Smorodin, Yu.A.

    1976-01-01

    The purpose of the investigation was to study the spectra of generation of neutral and charged pions in the upper atmosphere in order to establish the scaling behaviour of the multiple birth of particles at primary particle energies above the acceleration energies. The study of the spectrum gamma-quanta in the atmosphere and the muon spectrum at the sea level made it possible to adjust the pion generation spectrum. In experiments with emulsion chambers the spectra of gamma-quanta and electrons at different zenith angles at two levels in the atmosphere (225 and 700 gxcm -2 ) and the muon spectrum at the sea level were determined. The obtained data on pion birth in the atmosphere pointed to the conservation of scale and charge invariance in pion birth at nucleon energies of 10 12 -10 14 eV

  2. On the number of free energy extremums of a solid solution with two long-range order parameters

    International Nuclear Information System (INIS)

    Dateshidze, N.A.; Ratishvili, I.G.

    1977-01-01

    The free energy of ordering f.c.c. lattice solid solution is investigated. The ordering is regarded as homogeneous in the whole bulk of the crystal (i.e. resistant towards formation of antiphase domains). It is described by one of the appropriate distribution functions which contains two long-range order parameters. The calculations have revealed the extrema of the free energy function, and their shape and behaviour upon variations of temperature are analyzed. It is shown that under certain circumstances the system can display more than one minimum of free energy within the ordered phase

  3. Surface engineering by ion implantation

    International Nuclear Information System (INIS)

    Nielsen, Bjarne Roger

    1995-01-01

    Awidespread commercial applica tion iof particle accelerators is for ion implantation. Accelerator beams are used for ion implantation into metals, alloying a thin surface layer with foreign atoms to concentrations impossible to achieve by thermal processes, making for dramatic improvements in hardness and in resistance to wear and corrosion. Traditional hardening processes require high temperatures causing deformation; ion implantation on the other hand is a ''cold process'', treating the finished product. The ionimplanted layer is integrated in the substrate, avoiding the risk of cracking and delamination from normal coating processes. Surface properties may be ''engineered'' independently of those of the bulk material; the process does not use environmentally hazardous materials such as chromium in the surface coating. The typical implantation dose required for the optimum surface properties of metals is around 2 x 10 17 ion/cm 2 , a hundred times the typical doses for semiconductor processing. When surface areas of more than a few square centimetres have to be treated, the implanter must therefore be able to produce high beam currents (5 to 10 mA) to obtain an acceptable treatment time. Ion species used include nitrogen, boron, carbon, titanium, chromium and tantalum, and beam energies range from 50 to 200 keV. Since most components are three dimensional, it must be possible to rotate and tilt them in the beam, and control beam position over a large area. Examples of industrial applications are: - surface treatment of prostheses (hip and knee joints) to reduce wear of the moving parts, using biocompatible materials; - ion implantation into high speed ball bearings to protect against the aqueous corrosion in jet engines (important for service helicopters on oil rigs); - hardening of metal forming and cutting tools; - reduction of corrosive wear of plastic moulding tools, which are expensive to produce

  4. High Voltage Gain Dual Active Bridge Converter with an Extended Operation Range for Renewable Energy Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Tomas Manez, Kevin; Yudi, Xiao

    2018-01-01

    Developing bidirectional dc-dc converters has become a critical research topic and gains more and more attention in recent years due to the extensive applications of smart grids with energy storages, hybrid and electrical vehicles and dc microgrids. In this paper, a Partial Parallel Dual Active...

  5. Energy storage label : a method for comparing storage systems over all ranges

    NARCIS (Netherlands)

    Pierie, Frank; van Someren, Christian

    2015-01-01

    This report describes the creation and use of a database for energy storage technologies which was developed in conjunction with Netbeheer Nederland and the Hanze University of Applied Sciences. This database can be used to make comparisons between a selection of storage technologies and will

  6. Terminological dictionary of electrical power industry in range of generation, transmission and distribution of electric energy

    International Nuclear Information System (INIS)

    Biernacki, T.; Cegla, S.; Ciszewski, W.

    1990-08-01

    The dictionary contains about 5000 terms about conventional and nuclear power plants, energy sources, transmission lines, automation, power systems, environment protection, statistics etc. Each term is given with definition and its equivalents in English, French, German and Russian. Indexes of Polish, English, French, German and Russian terms are provided at the back of dictionary. (A.S.)

  7. Energy dependence of the zero-range DWBA normalization of the /sup 58/Ni(/sup 3/He,. cap alpha. )/sup 57/Ni reaction. [15 to 205 GeV, finite-range and nonlocality corrections

    Energy Technology Data Exchange (ETDEWEB)

    Shepard, J R; Zimmerman, W R; Kraushaar, J J [Colorado Univ., Boulder (USA). Dept. of Physics and Astrophysics

    1977-01-04

    Strong transitions in the /sup 58/Ni(/sup 3/He,..cap alpha..)/sup 57/Ni reaction were analyzed using both the zero-range and exact finite-range DWBA. Data considered covered a range of bombarding energies from 15 to 205 MeV. The zero-range DWBA described all data well when finite-range and non-locality corrections were included in the local energy approximation. Comparison of zero-range and exact finite-range calculations showed the local energy approximation correction to be very accurate over the entire energy region. Empirically determined D/sub 0/ values showed no energy dependence. A theoretical D/sub 0/ value calculated using an ..cap alpha.. wave function which reproduced the measured ..cap alpha.. rms charge radius and the elastic electron scattering form factor agreed well the empirical values. Comparison was made between these values and D/sub 0/ values quoted previously in the literature.

  8. Differential neutron spectrometry in the very low neutron energy range. Neutron cross sections for Zr, Al, polyethylene and liquid fluoropolymers

    International Nuclear Information System (INIS)

    Pokotilovskij, Yu.N.; Novopol'tsev, M.I.; Geltenbort, P.; Brenner, T.

    2003-01-01

    Some results of the test of the time-of-flight neutron spectrometers in the energy range (0.05-2.5)μeV are described. The measurements of total and differential cross sections were performed for several substances relevant to the experiments in the physics of ultracold neutrons: Zr, Al, polyethylene and liquid fluoropolymers

  9. Range-Energy Program for relativistic heavy ions in the region 1 < E < 3000 MeV/amu

    International Nuclear Information System (INIS)

    Salamon, M.H.

    1980-01-01

    This report describes a computer program (developed for analysis of Bevalac data) that calculates stopping power, range, or energy, and which includes the necessary corrections for accuracy in the high Z 1 , β regime, as discussed in the theoretical and review papers of S.P. Ahlen. The program is also available on PSS at LBL's Computer Center

  10. Performance analysis and experimental verification of mid-range wireless energy transfer through non-resonant magnetic coupling

    DEFF Research Database (Denmark)

    Peng, Liang; Wang, Jingyu; Zhejiang University, Hangzhou, China, L.

    2011-01-01

    In this paper, the efficiency analysis of a mid-range wireless energy transfer system is performed through non-resonant magnetic coupling. It is shown that the self-resistance of the coils and the mutual inductance are critical in achieving a high efficiency, which is indicated by our theoretical...

  11. Evaluation of energy requirements for all-electric range of plug-in hybrid electric two-wheeler

    International Nuclear Information System (INIS)

    Amjad, Shaik; Rudramoorthy, R.; Neelakrishnan, S.; Sri Raja Varman, K.; Arjunan, T.V.

    2011-01-01

    Recently plug-in hybrid electric vehicles (PHEVs) are emerging as one of the promising alternative to improve the sustainability of transportation energy and air quality especially in urban areas. The all-electric range in PHEV design plays a significant role in sizing of battery pack and cost. This paper presents the evaluation of battery energy and power requirements for a plug-in hybrid electric two-wheeler for different all-electric ranges. An analytical vehicle model and MATLAB simulation analysis has been discussed. The MATLAB simulation results estimate the impact of driving cycle and all-electric range on energy capacity, additional mass and initial cost of lead-acid, nickel-metal hydride and lithium-ion batteries. This paper also focuses on influence of cycle life on annual cost of battery pack and recommended suitable battery pack for implementing in plug-in hybrid electric two-wheelers. -- Research highlights: → Evaluates the battery energy and power requirements for a plug-in hybrid electric two-wheeler. → Simulation results reveal that the IDC demand more energy and cost of battery compared to ECE R40. → If cycle life is considered, the annual cost of Ni-MH battery pack is lower than lead-acid and Li-ion.

  12. Harnessing big data for estimating the energy consumption and driving range of electric vehicles

    DEFF Research Database (Denmark)

    Fetene, Gebeyehu Manie; Kaplan, Sigal; Mabit, Stefan Lindhard

    2017-01-01

    type; (iv) weather conditions. The results of the analysis measure the mean ECR of BEVs at 0.183 kW h/km, underline a 34% increase in ECR and a 25% decrease in driving range in the winter with respect to the summer, and suggest the electricity tariff for BEVs to be cost efficient with respect...

  13. Mutation breeding and submerged fermentation of a Pleurotus polysaccharide high-yield strain with low-energy heavy ions implantation

    International Nuclear Information System (INIS)

    Chen Henglei; Wan Honggui; Lv Changwu; Zeng Xianxian

    2010-01-01

    Pleurotus polysaccharide high-yield strains were selected through a method of auxotrophic primary screening and Shake-flask fermentation re-screening after low-energy heavy ions (the fluence of 1.2 x 10 16 N + /cm 2 at the energy of 15 keV) stepwise implantation. Two Pleurotus polysaccharide high-yield strains, PFPH-1 and PFPH-2, were selected with stable mycelium polysaccharide yield. The mycelium polysaccharide yield of PFPH-1 and PFPH-2 increased by 46.55% and 75.14%, respectively, compared to the original strain. The accumulation of mycelium biomass and intracellular polysaccharides were monitored in the submerged fermentation of Pleurotus ferulae by supplementation of various carbon and nitrogen sources as well as inorganic salts and pH alteration. The optima1 submerged fermentation medium favoring the accumulation of mycelium biomass and intracellular polysaccharides of PFPH-2 consisted of 1.0% wheat flour, 2.0% sucrose, 2.0% soybean flour, 1.5% bran extract, 0.2% K 2 HPO 4 , and 0.15% MgSO 4 ·7H 2 O, with a fittest pH value of 5.64. The orthogonal combination of the optimal carbon and nitrogen sources with inorganic salts indicates a synergistic effect on the accumulation of mycelium biomass and intracellular polysaccharides in the submerged fermentation of PFPH-2. The yield of mycelium polysaccharides of PFPH-2 increased to 903.73 ± 1.23 mg·L -1 by the end of fermentation. (authors)

  14. Hadronic multiplicity and total cross-section: a new scaling in wide energy range

    International Nuclear Information System (INIS)

    Kobylinsky, N.A.; Martynov, E.S.; Shelest, V.P.

    1983-01-01

    The ratio of mean multiplicity to total cross-section is shown to be the same for all the Regge models and to rise with energy as lns which is confirmed by experimental data. Hence, a power of multiplicity growth is unambiguously connected with that of total cross-section. As regards the observed growth, approximately ln 2 s, it tells about a dipole character of pomeron singularity

  15. Energy Analysis of Road Accidents Based on Close-Range Photogrammetry

    Directory of Open Access Journals (Sweden)

    Alejandro Morales

    2015-11-01

    Full Text Available This paper presents an efficient and low-cost approach for energy analysis of road accidents using images obtained using consumer-grade digital cameras and smartphones. The developed method could be used by security forces in order to improve the qualitative and quantitative analysis of traffic accidents. This role of the security forces is crucial to settle arguments; consequently, the remote and non-invasive collection of accident related data before the scene is modified proves to be essential. These data, taken in situ, are the basis to perform the necessary calculations, basically the energy analysis of the road accident, for the corresponding expert reports and the reconstruction of the accident itself, especially in those accidents with important damages and consequences. Therefore, the method presented in this paper provides the security forces with an accurate, three-dimensional, and scaled reconstruction of a road accident, so that it may be considered as a support tool for the energy analysis. This method has been validated and tested with a real crash scene simulated by the local police in the Academy of Public Safety of Extremadura, Spain.

  16. Study on transferring improved green fluorescent protein gene into wheat via low energy Ar+ implantation

    International Nuclear Information System (INIS)

    Wu Lifang; Li Hong; Song Daojun

    2000-01-01

    An improved GFP gene (mGFP4) was introduced into mature embryo cells of wheat cultivars Wan 9210 and Wanmai 32 via low energy ion beam-mediated delivery technique. Resistant calli were selected on medium containing paromomycin (100-140 mg/L). Five green plants were regenerated from resistant calli of Wan 9210 derived from 387 implated mature embryos. 32 green plants were obtained from 776 irradiated mature embryos in Wanmai 32. No green plant was regenerated from calli of 200 non-transformed embryos. PCR assays of 37 green plants showed that they all obtained the expected size of amplified DNA fragment (600 bp). Southern blot of 4 well-developed green plants confirmed stable integration of GFP gene into wheat genome. The average transformation frequencies of Wan 9210 and Wanmai 32 were 1.3% and 4.1%, respectively, according to the results of PCR assays

  17. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  18. Effects of O2 and H2O plasma immersion ion implantation on surface chemical composition and surface energy of poly vinyl chloride

    International Nuclear Information System (INIS)

    Zhang Wei; Chu, Paul K.; Ji Junhui; Zhang, Yihe; Jiang Zhimin

    2006-01-01

    Oxygen and water plasma immersion ion implantation (PIII) was used to modify poly vinyl chloride (PVC) to enhance oxygen-containing surface functional groups for more effective grafting. The modified surfaces were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), and contact angle measurements. Our experimental results show that both oxygen and water PIII can greatly improve the O to C ratios on the surface. The optimal plasma processing conditions differ for the two treatments. The hydrophilicity and surface energy of the plasma-implanted PVC are also improved significantly. Our results indicate that O 2 and H 2 O PIII increase both the polar and dispersion interactions and consequently the surface energy. It can be explained by the large amount of oxygen introduced to the surface and that many C-C bonds are transformed into more polar oxygen containing functional groups

  19. Dependence of wavelength of Xe ion-induced rippled structures on the fluence in the medium ion energy range

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg [Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich [Institute of Physics, University of Siegen (Germany)

    2010-07-01

    Ion-beam eroded self-organized nanostructures on semiconductors offer new ways for the fabrication of high density memory and optoelectronic devices. It is known that wavelength and amplitude of noble gas ion-induced rippled structures tune with the ion energy and the fluence depending on the energy range, ion type and substrate. The linear theory by Makeev predicts a linear dependence of the ion energy on the wavelength for low temperatures. For Ar{sup +} and O{sub 2}{sup +} it was observed by different groups that the wavelength grows with increasing fluence after being constant up to an onset fluence and before saturation. In this coarsening regime power-law or exponential behavior of the wavelength with the fluence was monitored. So far, investigations for Xe ions on silicon surfaces mainly concentrated on energies below 1 keV. We found a linear dependence of both the ion energy and the fluence on the wavelength and amplitude of rippled structures over a wide range of the Xe{sup +} ion energy between 5 and 70 keV. Moreover, we estimated the ratio of wavelength to amplitude to be constant meaning a shape stability when a threshold fluence of 2.10{sup 17} cm{sup -2} was exceeded.

  20. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  1. High energy storage density over a broad temperature range in sodium bismuth titanate-based lead-free ceramics.

    Science.gov (United States)

    Yang, Haibo; Yan, Fei; Lin, Ying; Wang, Tong; Wang, Fen

    2017-08-18

    A series of (1-x)Bi 0.48 La 0.02 Na 0.48 Li 0.02 Ti 0.98 Zr 0.02 O 3 -xNa 0.73 Bi 0.09 NbO 3 ((1-x)LLBNTZ-xNBN) (x = 0-0.14) ceramics were designed and fabricated using the conventional solid-state sintering method. The phase structure, microstructure, dielectric, ferroelectric and energy storage properties of the ceramics were systematically investigated. The results indicate that the addition of Na 0.73 Bi 0.09 NbO 3 (NBN) could decrease the remnant polarization (P r ) and improve the temperature stability of dielectric constant obviously. The working temperature range satisfying TCC 150  °C  ≤±15% of this work spans over 400 °C with the compositions of x ≥ 0.06. The maximum energy storage density can be obtained for the sample with x = 0.10 at room temperature, with an energy storage density of 2.04 J/cm 3 at 178 kV/cm. In addition, the (1-x)LLBNTZ-xNBN ceramics exhibit excellent energy storage properties over a wide temperature range from room temperature to 90 °C. The values of energy storage density and energy storage efficiency is 0.91 J/cm 3 and 79.51%, respectively, for the 0.90LLBNTZ-0.10NBN ceramic at the condition of 100 kV/cm and 90 °C. It can be concluded that the (1-x)LLBNTZ-xNBN ceramics are promising lead-free candidate materials for energy storage devices over a broad temperature range.

  2. Short range correlations in the pion s-wave self-energy of pionic atoms

    OpenAIRE

    Salcedo, L. L.; Holinde, K.; Oset, E.; Schütz, C.

    1995-01-01

    We evaluate the contribution of second order terms to the pion-nucleus s-wave optical potential of pionic atoms generated by short range nuclear correlation. The corrections are sizeable because they involve the isoscalar s-wave $\\pi N$ amplitude for half off-shell situations where the amplitude is considerably larger than the on-shell one. In addition, the s-wave optical potential is reanalyzed by looking at all the different conventional contributions together lowest order, Pauli corrected ...

  3. Simulation of wire-compensation of long range beam beam interaction in high energy accelerators

    International Nuclear Information System (INIS)

    Dorda, U.; )

    2006-01-01

    Full text: We present weak-strong simulation results for the effect of long-range beam-beam (LRBB) interaction in LHC as well as for proposed wire compensation schemes or wire experiments, respectively. In particular, we discuss details of the simulation model, instability indicators, the effectiveness of compensation, the difference between nominal and PACMAN bunches for the LHC, beam experiments, and wire tolerances. The simulations are performed with the new code BBTrack. (author)

  4. The Study of the Oxide Coating Effect on Bone-Implant Interface Formation by Means of Electron Microscopy Method with Energy Dispersive X-ray Analysis

    International Nuclear Information System (INIS)

    Gudakova, A.A.; Danilchenko, S.N.; Sukhodub, L.F.; Luk'yanchenko, V.V.; Zykova, A.V.; Safonov, V.I.

    2006-01-01

    The experimental results of the measurement of the tissue constituent elements distribution, as well as impurity elements in the tissues around a Ti-implant with protective TiO 2 oxide coating are presented. Study of morphology, qualitative and quantitative analysis were carried out by means of scanning electron microscopy method with energy dispersive X-ray analysis. The results show weak migration of Ti into the bone tissue near the interface and protective role of the oxide coatings

  5. Surface morphologies of He-implanted tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Bannister, M.E., E-mail: bannisterme@ornl.gov [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6371 (United States); Meyer, F.W.; Hijazi, H. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6371 (United States); Unocic, K.A.; Garrison, L.M.; Parish, C.M. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2016-09-01

    Surface morphologies of tungsten surfaces, both polycrystalline and single-crystal [1 1 0], were investigated using SEM and FIB/SEM techniques after implantations at elevated surfaces temperatures (1200–1300 K) using well-characterized, mono-energetic He ion beams with a wide range of ion energies (218 eV–250 keV). Nanofuzz was observed on polycrystalline tungsten (PCW) following implantation of 100-keV He ions at a flux threshold of 0.9 × 10{sup 16} cm{sup −2} s{sup −1}, but not following 200-keV implantations with similar fluxes. No nanofuzz formation was observed on single-crystal [1 1 0] tungsten (SCW), despite fluxes exceeding those demonstrated previously to produce nanofuzz on polycrystalline tungsten. Pre-damaging the single-crystal tungsten with implanted C impurity interstitials did not significantly affect the surface morphologies resulting from the high-flux He ion implantations. The main factor leading to the different observed surface structures for the pristine and C-implanted single-crystal W samples appeared to be the peak He ion flux characterizing the different exposures. It was speculated that nanofuzz formation was not observed for any SCW target exposures because of increased incubation fluences required for such targets.

  6. Surface modification of austenitic stainless steel by titanium ion implantation

    International Nuclear Information System (INIS)

    Evans, P.J.; Hyvarinen, J.; Samandi, M.

    1995-01-01

    The wear properties of AISI 316 austenitic stainless steel implanted with Ti were investigated for ion doses in the range (2.3-5.4)x10 16 ionscm -2 and average ion energies of 60 and 90keV. The implanted layer was examined by Rutherford backscattering, from which the retained doses were determined, and glow discharge optical emission spectroscopy. Following implantation, the surface microhardness was observed to increase with the greatest change occurring at higher ion energy. Pin-on-disc wear tests and associated friction measurements were also performed under both dry and lubricated conditions using applied loads of 2N and 10N. In the absence of lubrication, breakthrough of the implanted layer occurred after a short sliding time; only for a dose of 5.1x10 16 ionscm -2 implanted at an average energy of 90keV was the onset of breakthrough appreciably delayed. In contrast, the results of tests with lubrication showed a more gradual variation, with the extent of wear decreasing with implant dose at both 2N and 10N loads. Finally, the influence of Ti implantation on possible wear mechanisms is discussed in the light of information provided by several surface characterization techniques. ((orig.))

  7. Electron scattering from alkenes in the energy range 200-4500 eV

    International Nuclear Information System (INIS)

    Wickramarachchi, P.; Palihawadana, P.; Villela, G.; Ariyasinghe, W.M.

    2009-01-01

    Total electron scattering cross sections (TCS) of C 2 H 4 (ethylene), C 3 H 6 (propene), C 4 H 8 (butene) and C 4 H 6 (1,3-butadiene) have been obtained for 200-4500 eV electrons by the measurement of electron-beam intensity attenuation through a gas cell. An analytical expression is deduced to predict the intermediate energy TCS of chain-like hydrocarbons with C-C single and double bonds. The present experimental TCS are compared with the previous experimental measurements and the predictions by theoretical models.

  8. Pilot study for the implantation of a high-energy neutrons field

    International Nuclear Information System (INIS)

    Pinto, Jose Julio de O.; Mendes, Adriane C.; Federico, Claudio A.; Passaro, Angelo; Gaspar, Felipe de B.; Pazianotto, Mauricio T.

    2013-01-01

    In this work a theoretical study is presented for the implementation of a high-energy neutron field (14.1 MeV) produced by a neutron generator type DT (deuterium-tritium), to be installed in the premises of the Laboratorio de Radiacoes Ionizantes (LRI) of the Instituto de Estudos Avancados (IEAv). This evaluation was performed by means of computer simulation by Monte Carlo method, using the computer code MCNP5 (Monte Carlo N-Particle). The neutron spectra were simulated computationally for pre-selected points of the installation, allowing to estimate the beam quality in the positions provided for use of the direct beam. These simulations also allow assist the basement of a project to install the consistent D-T generator with the guidelines for radiation protection and radiation safety standards determined by the Comissao Nacional de Energia Nuclear (CNEN), by estimating the dose rates provided in accessible points to Individuals Occupationally Exposed (IOE) in the facility. The computational determination of spectra, fluxes and doses produced in different positions previously selected within and outside the laboratory, will serve as guidance from previous studies for the future installation of this generator in the physical facilities of the LRI

  9. Performance test for implantation of a primary standard of low energy X-ray beams

    International Nuclear Information System (INIS)

    Cardoso, Ricardo de Souza; Bossio, Francisco; Peixoto, Jose Guilherme P.

    2005-01-01

    The implementation of a standard laboratory of calibration chambers that will serve to radiotherapy activities, radiodiagnosis and radioprotection, depends on the knowledge of physical and dosimetric parameters that characterize the quality of the radiation beam. With the aim of verifying the reliability of the ionizing free-air chamber with variable volume manufactured by Victoreen Instruments, model 481, as a primary standard, a study of the performance of the chamber to x-rays qualities of low energy was developed in this work. These qualities are the ones recommended by 'Bureau International des Poids et Mesures' - BIPM, for daily routine of the calibration service performed by the 'Laboratorio Nacional de Metrologia das Radiacoes Ionizantes - LNMRI/IRD, for calibration of this secondary standard chambers that serve to the control in hospitals, clinics and industries. The results obtained at the present work show that the Victoreen chamber model 481 behaves as a primary standard, being easy to handle and having simple mechanical construction, and showing an expanded uncertainty equal to 0,26%, regarding the quality of the radiation beam of 30 kV. However, some of the equipment used at the present study need to be submitted to a strict routine calibration, in order for the laboratory to be in accordance with the recommendations of the standard ABNT -NBR ISO/IEC 17025 (2003). (author)

  10. Surface characterization of the cement for retention of implant supported dental prostheses: In vitro evaluation of cement roughness and surface free energy

    International Nuclear Information System (INIS)

    Brajkovic, Denis; Antonijevic, Djordje; Milovanovic, Petar; Kisic, Danilo; Zelic, Ksenija; Djuric, Marija; Rakocevic, Zlatko

    2014-01-01

    Graphical abstract: - Highlights: • Surface free energy and surface roughness influence bacterial adhesion. • Bacterial colonization causes periimplantitis and implant loss. • Zinc-based, glass-ionomers and resin-cements were investigated. • Glass-ionomers-cements present the lowest values of surface free energy and roughness. • Glass-ionomer-cements surface properties result with reduced bacterial adhesion. - Abstract: Background: Material surface free energy and surface roughness strongly influence the bacterial adhesion in oral cavity. The aim of this study was to analyze these two parameters in various commercial luting agents used for cementation of implant restorations. Materials and methods: Zinc-based, glass-ionomers, resin modified glass-ionomer and resin-cements were investigated. Contact angle and surface free energy were measured by contact angle analyzer using Image J software program. Materials’ average roughness and fractal dimension were calculated based on Atomic Force Microscope topography images. Results: Zinc phosphate cements presented significantly higher total surface free energy and significantly lower dispersive component of surface free energy compared to other groups, while resin-cements showed significantly lower polar component than other groups. The surface roughness and fractal dimension values were statistically the highest in the zinc phosphate cements and the lowest for the glass-ionomers cements. Conclusion: Glass-ionomers-cements presented lower values of surface free energy and surface roughness than zinc phosphate and resin cements, indicating that their surfaces are less prone to biofilm adhesion. Practical implications: Within limitations of an in vitro trial, our results indicate that glass-ionomers-cements could be the cements of choice for fixation of cement retained implant restorations due to superior surface properties compared to zinc phosphate and resin cements, which may result in reduced plaque formation

  11. Surface characterization of the cement for retention of implant supported dental prostheses: In vitro evaluation of cement roughness and surface free energy

    Energy Technology Data Exchange (ETDEWEB)

    Brajkovic, Denis [Clinic for Dentistry, Department of Maxillofacial Surgery, Faculty of Medical Sciences, University of Kragujevac, Svetozara Markovica 69, 34000 Kragujevac (Serbia); Antonijevic, Djordje; Milovanovic, Petar [Laboratory for Anthropology, Institute of Anatomy, School of Medicine, University of Belgrade, Dr. Subotica 4/2, 11000 Belgrade (Serbia); Kisic, Danilo [Laboratory for Atomic Physics, Institute of Nuclear Sciences “Vinca”, University of Belgrade, Belgrade (Serbia); Zelic, Ksenija; Djuric, Marija [Laboratory for Anthropology, Institute of Anatomy, School of Medicine, University of Belgrade, Dr. Subotica 4/2, 11000 Belgrade (Serbia); Rakocevic, Zlatko, E-mail: zlatkora@vinca.rs [Laboratory for Atomic Physics, Institute of Nuclear Sciences “Vinca”, University of Belgrade, Belgrade (Serbia)

    2014-08-30

    Graphical abstract: - Highlights: • Surface free energy and surface roughness influence bacterial adhesion. • Bacterial colonization causes periimplantitis and implant loss. • Zinc-based, glass-ionomers and resin-cements were investigated. • Glass-ionomers-cements present the lowest values of surface free energy and roughness. • Glass-ionomer-cements surface properties result with reduced bacterial adhesion. - Abstract: Background: Material surface free energy and surface roughness strongly influence the bacterial adhesion in oral cavity. The aim of this study was to analyze these two parameters in various commercial luting agents used for cementation of implant restorations. Materials and methods: Zinc-based, glass-ionomers, resin modified glass-ionomer and resin-cements were investigated. Contact angle and surface free energy were measured by contact angle analyzer using Image J software program. Materials’ average roughness and fractal dimension were calculated based on Atomic Force Microscope topography images. Results: Zinc phosphate cements presented significantly higher total surface free energy and significantly lower dispersive component of surface free energy compared to other groups, while resin-cements showed significantly lower polar component than other groups. The surface roughness and fractal dimension values were statistically the highest in the zinc phosphate cements and the lowest for the glass-ionomers cements. Conclusion: Glass-ionomers-cements presented lower values of surface free energy and surface roughness than zinc phosphate and resin cements, indicating that their surfaces are less prone to biofilm adhesion. Practical implications: Within limitations of an in vitro trial, our results indicate that glass-ionomers-cements could be the cements of choice for fixation of cement retained implant restorations due to superior surface properties compared to zinc phosphate and resin cements, which may result in reduced plaque formation

  12. Innovative Free-range Resonant Electrical Energy Delivery system (FREE-D System) for a ventricular assist device using wireless power.

    Science.gov (United States)

    Waters, Benjamin H; Smith, Joshua R; Bonde, Pramod

    2014-01-01

    Technological innovation of a smaller, single moving part has an advantage over earlier large pulsatile ventricular assist devices (VADs) prone to mechanical failure. Drivelines limit the potential for extended patient survival durations with newer pumps and act as source for infection, increased morbidity, rehospitalizations, and reduced quality of life. The Free-range Resonant Electrical Energy Delivery (FREE-D) wireless power system uses magnetically coupled resonators to efficiently transfer power. We demonstrate the efficiency over distance of this system. The experimental setup consists of an radiofrequency amplifier and control board which drives the transmit resonator coil, and a receiver unit consisting of a resonant coil attached to a radiofrequency rectifier and power management module. The power management module supplies power to the axial pump, which was set at 9,600 rpm. To achieve a seamless wireless delivery in any room size, we introduced a third relay coil. This relay coil can be installed throughout a room, whereas a single relay coil could be built into a jacket worn by the patient, which would always be within range of the receive coil implanted in the patient's body. The power was delivered over a meter distance without interruptions or fluctuations with coil, rectifier, and regulator efficiency more than 80% and overall system efficiency of 61%. The axial pump worked well throughout the 8 hours of continuous operation. Having same setup on the opposite side can double the distance. A tether-free operation of a VAD can be achieved by FREE-D system in room-size distances. It has the potential to make the VAD therapy more acceptable from the patient perspective.

  13. Prototype drift chamber for high energy heavy ions with a large dynamic range

    International Nuclear Information System (INIS)

    Kobayashi, T.; Bieser, F.; Crawford, H.; Lindstrom, P.; Baumgartner, M.; Greiner, D.

    1985-01-01

    The authors have constructed and tested a small prototype drift chamber designed for high energy heavy ions. When a drift chamber is used as a tracking detector for heavy projectile fragments from high energy nucleus-nucleus reactions, the major problem comes from the many spurious hits due to delta-rays. Three methods have been developed to solve this problem. The first one is to use a constant fraction discriminator to pick up the timing signal from the core ionization under the large background of delta-rays. The second one is to use pulse height information from the drift chamber to find the cell hit by the heavy ion. The last one is the idea of distributed planes. Modular planes (12 in this case) are distributed 10 cm apart on a rigid base plate to provide accurate relative positioning of the wires. The performance of the prototype chamber has been measured as a function of the high voltage bias and of the charge of the heavy ion from protons up to uranium at around 1 GeV/nucleon

  14. Development and characterization of real-time wide-energy range personal neutron dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Takashi; Tsujimura, Norio (Tohoku Univ., Sendai (Japan). Cyclotron and Radioisotope Center); Yamano, Toshiya; Suzuki, Toshikazu; Okamoto, Eisuke

    1994-04-01

    The authors developed a real-time personal neutron dosimeter which could give neutron dose equivalent over wide energy region from thermal to 10 odd MeV by using 2 silicon detectors, fast neutron sensor and slow neutron sensor. The energy response of this dosimeter was evaluated under thermal neutron field, monoenergetic neutron field between 200 keV and 15 MeV, and moderated [sup 252]Cf neutron field. The neutron dose equivalent was estimated by adding neutron dose equivalent below 1 MeV given by slow neutron sensor and that above 1 MeV by fast neutron sensor. It was verified from various field tests that this dosimeter is able to give neutron dose equivalent within a factor of 2 margin of accuracy in reactor, accelerator, fusion research and nuclear fuel handling facilities. This dosimeter has more than one order higher sensitivity than conventional personal neutron dosimeters and is insensitive to [gamma]-rays up to about 500 mSv/h. This dosimeter will soon be commercially available as a personal dosimeter which gives neutron and [gamma]-ray dose equivalents simultaneously by installing [gamma]-ray silicon sensor. (author).

  15. Response of optically stimulated luminescence dosimeters subjected to X-rays in diagnostic energy range

    International Nuclear Information System (INIS)

    Musa, Y; Hashim, S; Karim, M K A; Ang, W C; Salehhon, N; Bakar, K A

    2017-01-01

    The use of optically stimulated luminescence (OSL) for dosimetry applications has recently increased considerably due to availability of commercial OSL dosimeters (nanoDots) for clinical use. The OSL dosimeter has a great potential to be used in clinical dosimetry because of its prevailing advantages in both handling and application. However, utilising nanoDot OSLDs for dose measurement in diagnostic radiology can only be guaranteed when the performance and characteristics of the dosimeters are apposite. In the present work, we examined the response of commercially available nanoDot OSLD (Al 2 O 3 :C) subjected to X-rays in general radiography. The nanoDots response with respect to reproducibility, dose linearity and signal depletion were analysed using microStar reader (Landauer, Inc., Glenwood, IL). Irradiations were performed free-in-air using 70, 80 and 120 kV tube voltages and tube currents ranging from 10 – 100 mAs. The results showed that the nanoDots exhibit good linearity and reproducibility when subjected to diagnostic X-rays, with coefficient of variations (CV) ranging between 2.3% to 3.5% representing a good reproducibility. The results also indicated average of 1% signal reduction per readout. Hence, the nanoDots showed a promising potential for dose measurement in general X-ray procedure. (paper)

  16. Electrolytes for Use in High Energy Lithium-ion Batteries with Wide Operating Temperature Range

    Science.gov (United States)

    Smart, Marshall C.; Ratnakumar, B. V.; West, W. C.; Whitcanack, L. D.; Huang, C.; Soler, J.; Krause, F. C.

    2012-01-01

    Met programmatic milestones for program. Demonstrated improved performance with wide operating temperature electrolytes containing ester co-solvents (i.e., methyl butyrate) containing electrolyte additives in A123 prototype cells: Previously demonstrated excellent low temperature performance, including 11C rates at -30 C and the ability to perform well down to -60 C. Excellent cycle life at room temperature has been displayed, with over 5,000 cycles being demonstrated. Good high temperature cycle life performance has also been achieved. Demonstrated improved performance with methyl propionate-containing electrolytes in large capacity prototype cells: Demonstrated the wide operating temperature range capability in large cells (12 Ah), successfully scaling up technology from 0.25 Ah size cells. Demonstrated improved performance at low temperature and good cycle life at 40 C with methyl propionate-based electrolyte containing increasing FEC content and the use of LiBOB as an additive. Utilized three-electrode cells to investigate the electrochemical characteristics of high voltage systems coupled with wide operating temperature range electrolytes: From Tafel polarization measurements on each electrode, it is evident the NMC-based cathode displays poor lithium kinetics (being the limiting electrode). The MB-based formulations containing LiBOB delivered the best rate capability at low temperature, which is attributed to improved cathode kinetics. Whereas, the use of lithium oxalate as an additive lead to the highest reversible capacity and lower irreversible losses.

  17. “Atrial torsades de pointes” Induced by Low-Energy Shock From Implantable-Cardioverter Defibrillator

    Directory of Open Access Journals (Sweden)

    Ilknur Can, MD

    2013-09-01

    Full Text Available A 58 year-old-patient developed an episode of polymorphic atrial tachycardia which looked like "atrial torsades de pointes" after a 5J shock from implantable cardioverter defibrillator.

  18. e+e- annihilation into multihadrons in the 1350-2400 MeV energy range

    International Nuclear Information System (INIS)

    Bisello, D.

    1990-11-01

    In the study of e + e - annihilation into multihadrons, evidence is found for a resonant state around 1650 MeV/c 2 in the π + π - π + π - π 0 and K S 0 K ± π -+ channels. The π + π - π + π - channel shows the well known ρ'(1600) signal with a significant a 1 π and ρε dynamics while the π + π - π 0 π 0 , without ωπ 0 dynamics, shows a wide bump around 1650 MeV/c 2 with a main ρ ± π -+ π 0 dynamics. Data have been collected with the DM2 detector at DCI, the Orsay colliding ring, and refer to about 2 pb -1 luminosity in the 1350 - 2400 MeV energy interval

  19. Electrofission of 239Pu in the energy range 7 endash 12 MeV

    International Nuclear Information System (INIS)

    Arruda-Neto, J.D.; Yoneama, M.; Dias, J.F.; Garcia, F.; Reigota, M.A.; Likhachev, V.P.; Guzman, F.; Rodriguez, O.; Mesa, J.

    1997-01-01

    The electrofission cross section of 239 Pu(e,f) is measured between 7 and 12 MeV. The data are analyzed by means of the virtual photon formalism, assuming that E1, E2 (T=0), and M1 transitions are involved. Using known estimates for the E1 and E2 (T=0) fission strengths, it is deduced an M1 fission strength of 19±4μ N 2 concentrated near the fission barrier (between 5.4 and 5.8 MeV). The levels of the 239 Pu transition nucleus are theoretically obtained; a bunch of positive-parity levels shows up between 5.5 and 5.9 MeV, which might well be associated with the deduced M1 strength, since the E2 strength is negligible in this energy interval. copyright 1997 The American Physical Society

  20. CO2. Separation, storage, use. Holistic assessment in the range of energy sector and industry

    International Nuclear Information System (INIS)

    Fischedick, Manfred; Goerner, Klaus

    2015-01-01

    The technology for CO 2 capture and storage (CCS) and CO 2 usage (CCR) is illuminated in this reference book comprehensively and from different perspectives. Experts from research and industry present the CCS and CCR technology based on the scientific and technical foundations and describe the state-of-the-art. They compare energy balances for different techniques and discuss legal, economic and socio-political aspects. In scenario analyzes they demonstrate the future contribution of the technologies and present the views of the different stakeholder groups. The authors claim to inform value-free. They disclose the criteria for the assessment of individual perspectives. An important work on a current and controversial discussed technology. [de

  1. Partial wave analysis of DM2 data in the η(1430) energy range

    International Nuclear Information System (INIS)

    Augustin, J.E.; Cosme, G.; Couchot, F.; Fulda, F.; Grosdidier, G.; Jean-Marie, B.; Lepeltier, V.; Szklarz, G.; Bisello, D.; Busetto, G.; Castro, A.; Pescara, L.; Sartori, P.; Stanco, L.; Ajaltouni, Z.; Falvard, A.; Jousset, J.; Michel, B.; Montret, J.C.

    1990-10-01

    Partial Wave Analysis of the J/ψ → γK S 0 K ± π -+ , γK ± K -+ π 0 decays in the ι/η(1430) mass range shows a clear pseudoscalar dominance, with two dynamical components. The main one, centered at ∼ 1460 MeV/c 2 , proceeds via a 0 (980)π dynamics, while the second one with K*(892)K dynamics is peaked at ∼ 1420 MeV/c 2 , close to its threshold. In addition, the higher part of the mass spectrum contains a significant contribution from the 1 ++ K*(892)K wave. In the PWA of the J/ψ → γηπ + π - channel a resonant a 0 π production is observed slightly below 1400 MeV/c 2

  2. Anomalous group velocity at the high energy range of real 3D photonic nanostructures

    Science.gov (United States)

    Botey, Muriel; Martorell, Jordi; Lozano, Gabriel; Míguez, Hernán; Dorado, Luis A.; Depine, Ricardo A.

    2010-05-01

    We perform a theoretical study on the group velocity for finite thin artificial opal slabs made of a reduced number of layers in the spectral range where the light wavelength is on the order of the lattice parameter. The vector KKR method including extinction allows us to evaluate the finite-size effects on light propagation in the ΓL and ΓX directions of fcc close-packed opal films made of dielectric spheres. The group is index determined from the phase delay introduced by the structure to the forwardly transmitted electric field. We show that for certain frequencies, light propagation can either be superluminal -positive or negative- or approach zero depending on the crystal size and absorption. Such anomalous behavior can be attributed to the finite character of the structure and provides confirmation of recently emerged experimental results.

  3. Polarization control of high order harmonics in the EUV photon energy range.

    Science.gov (United States)

    Vodungbo, Boris; Barszczak Sardinha, Anna; Gautier, Julien; Lambert, Guillaume; Valentin, Constance; Lozano, Magali; Iaquaniello, Grégory; Delmotte, Franck; Sebban, Stéphane; Lüning, Jan; Zeitoun, Philippe

    2011-02-28

    We report the generation of circularly polarized high order harmonics in the extreme ultraviolet range (18-27 nm) from a linearly polarized infrared laser (40 fs, 0.25 TW) focused into a neon filled gas cell. To circularly polarize the initially linearly polarized harmonics we have implemented a four-reflector phase-shifter. Fully circularly polarized radiation has been obtained with an efficiency of a few percents, thus being significantly more efficient than currently demonstrated direct generation of elliptically polarized harmonics. This demonstration opens up new experimental capabilities based on high order harmonics, for example, in biology and materials science. The inherent femtosecond time resolution of high order harmonic generating table top laser sources renders these an ideal tool for the investigation of ultrafast magnetization dynamics now that the magnetic circular dichroism at the absorption M-edges of transition metals can be exploited.

  4. Observation of short range three-particle correlations in e+e- annihilations at LEP energies

    CERN Document Server

    Abreu, P; Adye, T; Agasi, E; Ajinenko, I; Aleksan, Roy; Alekseev, G D; Allport, P P; Almehed, S; Alvsvaag, S J; Amaldi, Ugo; Amato, S; Andreazza, A; Andrieux, M L; Antilogus, P; Apel, W D; Arnoud, Y; Augustin, J E; Augustinus, A; Baillon, Paul; Bambade, P; Barate, R; Barbiellini, Guido; Bardin, Dimitri Yuri; Barker, G J; Baroncelli, A; Barrio, J A; Bartl, Walter; Barão, F; Bates, M J; Battaglia, Marco; Baubillier, M; Baudot, J; Becks, K H; Begalli, M; Beillière, P; Belokopytov, Yu A; Belous, K S; Benvenuti, Alberto C; Berggren, M; Bertrand, D; Bianchi, F; Bigi, M; Bilenky, S M; Billoir, P; Bloch, D; Blume, M; Blyth, S; Bocci, V; Bolognese, T; Bonesini, M; Bonivento, W; Booth, P S L; Borisov, G; Bosio, C; Bosworth, S; Botner, O; Bouquet, B; Bourdarios, C; Bowcock, T J V; Bozzo, M; Branchini, P; Brand, K D; Brenner, R A; Bricman, C; Brillault, L; Brown, R C A; Brunet, J M; Brückman, P; Bugge, L; Buran, T; Buys, A; Bärring, O; Caccia, M; Calvi, M; Camacho-Rozas, A J; Camporesi, T; Canale, V; Canepa, M; Cankocak, K; Cao, F; Carena, F; Carrilho, P; Carroll, L; Caso, Carlo; Castillo-Gimenez, M V; Cattai, A; Cavallo, F R; Cerrito, L; Chabaud, V; Charpentier, P; Chaussard, L; Chauveau, J; Checchia, P; Chelkov, G A; Chierici, R; Chochula, P; Chorowicz, V; Cindro, V; Collins, P; Contreras, J L; Contri, R; Cortina, E; Cosme, G; Cossutti, F; Crawley, H B; Crennell, D J; Crosetti, G; Cuevas-Maestro, J; Czellar, S; D'Almagne, B; Da Silva, W; Dahl-Jensen, Erik; Dahm, J; Dam, M; Damgaard, G; Daum, A; Dauncey, P D; Davenport, Martyn; De Angelis, A; De Boeck, H; De Brabandere, S; De Clercq, C; De Lotto, B; De Min, A; De Paula, L S; De Saint-Jean, C; Defoix, C; Della Ricca, G; Delpierre, P A; Demaria, N; Di Ciaccio, Lucia; Dijkstra, H; Djama, F; Dolbeau, J; Doroba, K; Dracos, M; Drees, J; Drees, K A; Dris, M; Dufour, Y; Dupont, F; Dönszelmann, M; Edsall, D M; Ehret, R; Eigen, G; Ekelöf, T J C; Ekspong, Gösta; Elsing, M; Engel, J P; Ershaidat, N; Erzen, B; Espirito-Santo, M C; Falk, E; Fassouliotis, D; Feindt, Michael; Fenyuk, A; Ferrer, A; Filippas-Tassos, A; Firestone, A; Fischer, P A; Fokitis, E; Fontanelli, F; Formenti, F; Franek, B J; Frenkiel, P; Fries, D E C; Frodesen, A G; Frühwirth, R; Fulda-Quenzer, F; Fuster, J A; Föth, H; Fürstenau, H; Galloni, A; Gamba, D; Gandelman, M; García, C; García, J; Gaspar, C; Gasparini, U; Gavillet, P; Gazis, E N; Gelé, D; Gerber, J P; Gibbs, M; Gillespie, D; Gokieli, R; Golob, B; Gopal, Gian P; Gorn, L; Gracco, Valerio; Graziani, E; Grosdidier, G; Gunnarsson, P; Guy, J; Guz, Yu; Górski, M; Günther, M; Haedinger, U; Hahn, F; Hahn, M; Hahn, S; Hajduk, Z; Hallgren, A; Hamacher, K; Hao, W; Harris, F J; Hedberg, V; Henriques, R P; Hernández, J J; Herquet, P; Herr, H; Hessing, T L; Higón, E; Hilke, Hans Jürgen; Hill, T S; Holmgren, S O; Holt, P J; Holthuizen, D J; Houlden, M A; Huet, K; Hultqvist, K; Ioannou, P; Jackson, J N; Jacobsson, R; Jalocha, P; Janik, R; Jarlskog, G; Jarry, P; Jean-Marie, B; Johansson, E K; Joram, Christian; Juillot, P; Jönsson, L B; Jönsson, P E; Kaiser, M; Kalmus, George Ernest; Kapusta, F; Karlsson, M; Karvelas, E; Katargin, A; Katsanevas, S; Katsoufis, E C; Keränen, R; Khomenko, B A; Khovanskii, N N; King, B J; Kjaer, N J; Klein, H; Klovning, A; Kluit, P M; Kokkinias, P; Koratzinos, M; Kostyukhin, V; Kourkoumelis, C; Kramer, P H; Krammer, Manfred; Kreuter, C; Kronkvist, I J; Krumshtein, Z; Krupinski, W; Królikowski, J; Kubinec, P; Kucewicz, W; Kurvinen, K L; Kuznetsov, O; Köhne, J H; Köne, B; La Vaissière, C de; Lacasta, C; Laktineh, I; Lamblot, S; Lamsa, J; Lanceri, L; Lane, D W; Langefeld, P; Lapin, V; Last, I; Laugier, J P; Lauhakangas, R; Leder, Gerhard; Ledroit, F; Lefébure, V; Legan, C K; Leitner, R; Lemoigne, Y; Lemonne, J; Lenzen, Georg; Lepeltier, V; Lesiak, T; Liko, D; Lindner, R; Lipniacka, A; Lippi, I; Lokajícek, M; Loken, J G; Loukas, D; Lutz, P; Lyons, L; López, J M; López-Aguera, M A; López-Fernandez, A; Lörstad, B; MacNaughton, J N; Maehlum, G; Maio, A; Malychev, V; Mandl, F; Marco, J; Margoni, M; Marin, J C; Mariotti, C; Markou, A; Maron, T; Martí i García, S; Martínez-Rivero, C; Martínez-Vidal, F; Maréchal, B; Matorras, F; Matteuzzi, C; Matthiae, Giorgio; Mazzucato, M; McCubbin, M L; McKay, R; McNulty, R; Medbo, J; Meroni, C; Meyer, W T; Michelotto, M; Migliore, E; Mirabito, L; Mitaroff, Winfried A; Mjörnmark, U; Moa, T; Monge, M R; Morettini, P; Mundim, L M; Murray, W J; Muryn, B; Myagkov, A; Myatt, Gerald; Mönig, K; Møller, R; Müller, H; Naraghi, F; Navarria, Francesco Luigi; Navas, S; Negri, P; Neumann, W; Neumeister, N; Nicolaidou, R; Nielsen, B S; Nieuwenhuizen, M; Nikolaenko, V; Niss, P; Nomerotski, A; Normand, Ainsley; Némécek, S; Oberschulte-Beckmann, W; Obraztsov, V F; Olshevskii, A G; Onofre, A; Orava, Risto; Ouraou, A; Paganini, P; Paganoni, M; Pagès, P; Palka, H; Papadopoulou, T D; Pape, L; Parkes, C; Parodi, F; Passeri, A; Pegoraro, M; Peralta, L; Pernegger, H; Pernicka, Manfred; Perrotta, A; Petridou, C; Petrolini, A; Phillips, H T; Piana, G; Pierre, F; Pimenta, M; Plaszczynski, S; Podobrin, O; Pol, M E; Polok, G; Poropat, P; Pozdnyakov, V; Prest, M; Privitera, P; Pukhaeva, N; Pullia, Antonio; Radojicic, D; Ragazzi, S; Rahmani, H; Rames, J; Ratoff, P N; Read, A L; Reale, M; Rebecchi, P; Redaelli, N G; Regler, Meinhard; Reid, D; Renton, P B; Resvanis, L K; Richard, F; Richardson, J; Rinaudo, G; Ripp, I; Romero, A; Roncagliolo, I; Ronchese, P; Roos, L; Rosenberg, E I; Rosso, E; Roudeau, Patrick; Rovelli, T; Ruhlmann-Kleider, V; Ruiz, A; Rídky, J; Rückstuhl, W; Saarikko, H; Sacquin, Yu; Sadovskii, A; Sajot, G; Salt, J; Sannino, M; Schneider, H; Schyns, M A E; Sciolla, G; Scuri, F; Sedykh, Yu; Segar, A M; Seitz, A; Sekulin, R L; Shellard, R C; Siccama, I; Siegrist, P; Simonetti, S; Simonetto, F; Sissakian, A N; Sitár, B; Skaali, T B; Smadja, G; Smirnov, N; Smirnova, O G; Smith, G R; Sokolov, A; Sosnowski, R; Souza-Santos, D; Spassoff, Tz; Spiriti, E; Squarcia, S; Stanescu, C; Stapnes, Steinar; Stavitski, I; Stepaniak, K; Stichelbaut, F; Stocchi, A; Strauss, J; Strub, R; Stugu, B; Stäck, H; Szczekowski, M; Szeptycka, M; Sánchez, J; Tabarelli de Fatis, T; Tavernet, J P; Tilquin, A; Timmermans, J; Tkatchev, L G; Todorov, T; Toet, D Z; Tomaradze, A G; Tomé, B; Tortora, L; Tranströmer, G; Treille, D; Trischuk, W; Tristram, G; Trombini, A; Troncon, C; Tsirou, A L; Turluer, M L; Tyapkin, I A; Tyndel, M; Tzamarias, S; Ullaland, O; Valenti, G; Vallazza, E; Van Eldik, J; Van der Velde, C; Vassilopoulos, N; Vegni, G; Ventura, L; Venus, W A; Verbeure, F; Verlato, M; Vertogradov, L S; Vilanova, D; Vincent, P; Vitale, L; Vlasov, E; Vodopyanov, A S; Vrba, V; Wahlen, H; Walck, C; Wehr, A; Weierstall, M; Weilhammer, Peter; Wetherell, Alan M; Wicke, D; Wickens, J H; Wielers, M; Wilkinson, G R; Williams, W S C; Winter, M; Witek, M; Woschnagg, K; Yip, K; Yushchenko, O P; Zach, F; Zacharatou-Jarlskog, C; Zaitsev, A; Zalewska-Bak, A; Zalewski, Piotr; Zavrtanik, D; Zevgolatakos, E; Zimin, N I; Zito, M; Zontar, D; Zuberi, R; Zucchelli, G C; Zumerle, G; de Boer, Wim; van Apeldoorn, G W; van Dam, P; Åsman, B; Österberg, K; Überschär, B; Überschär, S

    1995-01-01

    \\def\\tpc{three-particle correlation} \\def\\twopc{two-particle correlation} Measurements are presented of short range three-particle correlations in e^+ e^- annihilations at LEP using data collected by the DELPHI detector. %The jet structure is studied using three-particle correlation functions. At small values of the four-momentum difference, strong three-particle correlations are observed for like-sign (+++ and ---) and for unlike-sign (++- and +--) pion combinations which are not a consequence of two-particle correlations. A possible explanation of the observed effects in like-sign combinations is the existence of higher order Bose-Einstein interference, which significantly changes the particle distributions in jets.

  5. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  6. Nuclear statistics of dysprosium resonance parameters in the energy range 10 - 1000 eV

    International Nuclear Information System (INIS)

    Shin, S. G.; Kye, Y. U.; Cho, M. H.; Kim, G. N.; Namkung, W.; Lee, M. W.; Kang, Y. R.; Roe, T. I.

    2016-01-01

    A resonance parameter analysis is often performed in the Resolved Resonance Region (RRR) in order to estimate the average level spacing, distribution of the reduced widths and so on. Neutron Capture experiments on dysprosium isotopes were performed at the electron linear accelerator (LINAC) facility of the Rensselear Polytechnic Institute (RPI) in the neutron energy region from 10 eV to 1 keV. The following nuclear statistics of the resonance parameters will be discussed in this paper. The D 0 for 161 Dy and 163 Dy were judged to be constant up to 120.6 and 163.9 eV, respectively. It was assumed that the D 0 of 162 Dy and 164 Dy is constant up to 1000 eV because they have few resonances. The results were compared with the values from Reference 11 as shown in Figure 1. Statistical distributions of reduced neutron were investigated for the three isotopes in the region from 0 to 1000 eV; 161 Dy, 162 Dy, and 163 Dy, but not for 164 Dy because of a few number of resonances. The reduced neutron widths Γ n 0 were divided by the unweighted average reduced neutron width < Γ n 0 > for each isotope. A cumulative distribution of these unitless ratios is compared with the integral of the Porter-Thomas distribution (χ 2 distribution with one degree of freedom). The results agree reasonably with the Porter Thomas distributions.

  7. Inclusive photoproduction of PHI, Ksup(*)(890) and Ksup(*)(1420) in the photon energy range 20 to 70 GeV

    International Nuclear Information System (INIS)

    Atkinson, M.; Davenport, M.; Flower, P.; Hutton, J.S.; Kumar, B.R.; Morris, J.A.G.; Morris, J.V.; Sharp, P.H.

    1986-01-01

    Inclusive photoproduction of PHI, Ksup(*0)(890), anti Ksup(*0)(890) and Ksup(*0)(1420), anti Ksup(*0)(1420) has been studied in γp collisions with photons of energy 20 to 70 GeV and in the range 0.1<=chisub(F)<=0.95 [0.4<=chisub(F)<=0.8 for the anti Ksup(*)(1420)], chisub(F) being the Feynman variable of the vector/tensor meson. The cross-sections for these processes, averaged over the photon energy range and integrated over chisub(F) are given. The inclusive PHI production in the forward direction can be described quantitatively by a triple-Regge model calculation. The remaining PHI production and the total Ksup(*0)(890) and anti Ksup(*0)(890) production are consistent with a quark fusion picture. (orig.)

  8. Commercial cyclotrons. Part I: Commercial cyclotrons in the energy range 10 30 MeV for isotope production

    Science.gov (United States)

    Papash, A. I.; Alenitsky, Yu. G.

    2008-07-01

    A survey of commercial cyclotrons for production of medical and industrial isotopes is presented. Compact isochronous cyclotrons which accelerate negative hydrogen ions in the energy range 10 30 MeV have been widely used over the last 25 years for production of medical isotopes and other applications. Different cyclotron models for the energy range 10 12 MeV with moderate beam intensity are used for production of 11C, 13N, 15O, and 18F isotopes widely applied in positron emission tomography. Commercial cyclotrons with high beam intensity are available on the market for production of most medical and industrial isotopes. In this work, the physical and technical parameters of different models are compared. Possibilities of improving performance and increasing intensity of H- beams up to 2 3 mA are discussed.

  9. Energy efficiency and CO_2 mitigation potential of the Turkish iron and steel industry using the LEAP (long-range energy alternatives planning) system

    International Nuclear Information System (INIS)

    Ates, Seyithan A.

    2015-01-01

    With the assistance of the LEAP (long-range energy alternatives planning) energy modeling tool, this study explores the energy efficiency and CO_2 emission reduction potential of the iron and steel industry in Turkey. With a share of 35%, the steel and iron industry is considered as the most energy-consuming sector in Turkey. The study explores that the energy intensity rate can be lowered by 13%, 38% and 51% in SEI (slow-speed energy efficiency improvement), AEI (accelerating energy efficiency improvement) and CPT (cleaner production and technology scenario) scenarios, respectively. Particularly the projected aggregated energy savings of the scenarios CPT and AES are very promising with saving rates of 33.7% and 23% respectively. Compared to baseline scenarios, energy efficiency improvements correspond to economic potential of 0.1 billion dollars for SEI, 1.25 dollars for AEI and 1.8 billion dollars for CPT scenarios annually. Concerning GHG (greenhouse gas) emissions, in 2030 the iron and steel industry in Turkey is estimated to produce 34.9 MtCO_2 in BAU (business-as-usual scenario), 32.5 MtCO_2 in SEI, 24.6 MtCO_2 in AEI and 14.5 MtCO_2 in CPT a scenario which corresponds to savings of 9%–39%. The study reveals that energy consumption and GHG emissions of the iron and steel industry can be lowered significantly if the necessary measures are implemented. It is expected that this study will fill knowledge gaps pertaining to energy efficiency potential in Turkish energy intensive industries and help stakeholders in energy intensive industries to realize the potential for energy efficiency and GHG mitigation. - Highlights: • This paper explores energy efficiency potential of iron and Steel industry in Turkey. • We applied the LEAP modeling to forecast future developments. • Four different scenarios have been developed for the LEAP modeling. • There is a huge potential for energy efficiency and mitigation of GHG emissions.

  10. DM2 results on e+e- annihilation into multihadrons in the 1350-2400 MeV energy range

    International Nuclear Information System (INIS)

    Bisello, D.; Busetto, G.; Castro, A.; Nigro, M.; Pescara, L.; Sartori, P.; Stanco, L.; Antonelli, A.; Baldini, R.; Biagini, M.E.; Calcaterra, A.; Schioppa, M.; Augustin, J.E.; Cosme, G.; Couchot, F.; Fulda, F.; Grosdidier, G.; Jean-Marie, B.; Lepeltier, V.; Szklarz, G.

    1990-06-01

    We present preliminary results on the study of e + e - annihilation into π + π - π + π - , π + π - π 0 π 0 , π + π - π 0 , π + π - π + π - π 0 , K + K - π + π - and K s 0 K ± π -+ in the 1350-2400 MeV energy range. Data have been collected with the DM2 detector at DCI, the Orsay colliding ring, and refer to about 2 pb -1 integrated luminosity

  11. A study on the ranges of low energy ions in biological samples and its mechanism of biological effects

    International Nuclear Information System (INIS)

    Lu Ting; Xie Liqing; Li Junping; Xia Ji

    1993-01-01

    The seeds of wheat and bean are irradiated by iron ion beam with energy 100 keV. The RBS spectra of the samples are observed and the ranges and distributions of the iron ions in the wheat and bean are calculated theoretically by means of Monte Carlo method. The results of theory and experiment are compared and the mechanism of biological effects induced by ion is discussed

  12. The total neutron cross section of 58Fe in the energy range 7 to 325 keV

    International Nuclear Information System (INIS)

    Hong, L.D.; Beer, H.; Kaeppeler, F.

    1976-08-01

    The total neutron cross section of 58 Fe has been determined in the energy range 7-325 keV by a transmission measurement using enriched 58 Fe samples. The data have been shape fitted by means of an R-matrix multi-level formalism to extract resonance parameters for s- and l > 0 wave resonances. The s-wave strength function was determined to S 0 = (4.3 +- 1.9) c 10 -4 . (orig.) [de

  13. Measurement of pair production cross sections in Ge for the 1. 238-3. 548 MeV energy range

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, R K; Singh, K; Sahota, H S

    1985-02-28

    Pair production cross sections have been determined for the 1.238-3.548 MeV energy range in germanium (Z = 32) using a Ge(Li) gamma ray detector. The experimental results have been compared with the theoretical cross sections of previous workers. The results of the present measurements agree with the Bethe-Heitler results down to 1.771 MeV. However, at 1.238 MeV the experimental results are higher than all the theories.

  14. Dynamical effects and time scale in fission processes in nuclear collisions in the fermi energy range

    International Nuclear Information System (INIS)

    Colin, J.; Bocage, F.; Louvel, M.; Bellaize, N.; Bougault, R.; Brou, R.; Cussol, D.; Durand, D.; Genouin-Duhamel, E.; Lecolley, J.F.; Le Neindre, N.; Lopez, O.; Nguyen, A.D.; Peter, J.; Steckmeyer, J.C.; Tamain, B.; Vient, E.; Brun, C. le; Genoux-Lubain, A.

    1999-01-01

    Recent experimental results concerning heavy systems (Pb+Au, Pb+Ag, Pb+Al, Gd+U, Gd+C, Ta+Au, U+U, U+C, Xe+Sn... o btained at Ganil by the Indra and Nautilus collaborations will be presented. A study of reaction mechanisms has shown the dominant binary and highly dissipative character of the process. The two heavy and excited fragments produced after the first stage of the interaction can experience various decay modes: evaporation, fission, multifragmentation. However, deviations from this simple picture have been found by analysing angular and velocity distributions of light charge particles, IMF's (Intermediate Mass Fragment) and fragments. Indeed, there is an amount of matter in excess emitted in-between the two primary sources suggesting either the existence of a mid-rapidity source similar to the one observed in the relativistic regime (participants) or a strong deformation induced by the dynamics of the collision (neck instability). This last scenario is explored by analysing in details the angular distributions of the fission fragments. More precisely, authors observed two components: The first one is isotropic and consistent with the predictions of a statistical model, the second is aligned along the velocity direction of the fissioning nuclei and has to be compared with the predictions of dynamical calculations. In this talk, authors present the probability associated to each component as a function of the system size, the charge asymmetry of the fission fragments, the incident energy and the impact parameter. From the statistical component authors extract the temperature, the charge and the angular momentum of the fissioning nuclei. From the second component authors propose a scenario to explain such process and authors discuss the physical parameters which can be extracted

  15. Dynamical effects and time scale in fission processes in nuclear collisions in the Fermi energy range

    International Nuclear Information System (INIS)

    Colin, J.; Bocage, F.; Louvel, M.

    1999-10-01

    Recent experimental results concerning heavy systems (Pb+Au, Pb+Ag, Pb+Al, Gd+U, Gd+C, Ta+Au, U+U, U+C, Xe+Sn...) obtained at Ganil by the Indra and Nautilus collaborations will be presented. A study of reaction mechanisms has shown the dominant binary and highly dissipative character of the process. The two heavy and excited fragments produced after the first stage of the interaction can experience various decay modes: evaporation, fission, multifragmentation. However, deviations from this simple picture have been found by analysing angular and velocity distribution of light charge particles, IMF's (Intermediate Mass Fragment) and fragments. Indeed, there is an amount of matter in excess emitted in-between the two primary sources suggesting either the existence of a mi-rapidity source similar to the one observed in the relativistic regime (participants) or a strong deformation induced by the dynamics of the collision (neck instability). This last scenario is explored by analysing in details the angular distributions of the fission fragments. More precisely, we observed two components: the first one is isotropic and consistent with the predictions of a statistical model, the second is aligned along the velocity direction of the fissioning nuclei and has to be compared with the predictions of dynamical calculations. In this talk, we present the probability associated to each component as a function of the system size, the charge asymmetry of the fission fragments, the incident energy and the impact parameter. From the statistical component we extract the temperature, the charge and the angular momentum of the fissioning nuclei. From the second component we propose a scenario to explain such process and we discuss the physical parameters which can be extracted. (authors)

  16. Analyses of Alpha-Alpha Elastic Scattering Data in the Energy Range 140 - 280 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Shehadeh, Zuhair F. [Taif University, Taif (Saudi Arabia)

    2017-01-15

    The differential and the reaction cross-sections for 4He-4He elastic scattering data have been nicely obtained at four energies ranging from 140 MeV to 280 MeV (lab system), namely, 140, 160, 198 and 280 MeV, by using a new optical potential with a short-range repulsive core. The treatment has been handled relativistically as υ/c > 0.25 for the two lower energies and υ/c > 0.31 for the two higher ones. In addition to explaining the elastic angular distributions, the adopted potentials accounted for the structure that may exist at angles close to 90◦ , especially for the 198 and the 280-MeV incident energies. No renormalization has been used, and all our potential parameters are new. The necessity of including a short-range repulsive potential term in our real nuclear potential part has been demonstrated. Our results contribute to solving a long-standing problem concerning the nature of the alpha-alpha potential. This is very beneficial in explaining unknown alpha-nucleus and nucleus-nucleus relativistic reactions by using the cluster formalism.

  17. Constructing high-accuracy intermolecular potential energy surface with multi-dimension Morse/Long-Range model

    Science.gov (United States)

    Zhai, Yu; Li, Hui; Le Roy, Robert J.

    2018-04-01

    Spectroscopically accurate Potential Energy Surfaces (PESs) are fundamental for explaining and making predictions of the infrared and microwave spectra of van der Waals (vdW) complexes, and the model used for the potential energy function is critically important for providing accurate, robust and portable analytical PESs. The Morse/Long-Range (MLR) model has proved to be one of the most general, flexible and accurate one-dimensional (1D) model potentials, as it has physically meaningful parameters, is flexible, smooth and differentiable everywhere, to all orders and extrapolates sensibly at both long and short ranges. The Multi-Dimensional Morse/Long-Range (mdMLR) potential energy model described herein is based on that 1D MLR model, and has proved to be effective and accurate in the potentiology of various types of vdW complexes. In this paper, we review the current status of development of the mdMLR model and its application to vdW complexes. The future of the mdMLR model is also discussed. This review can serve as a tutorial for the construction of an mdMLR PES.

  18. 4.5 Tesla magnetic field reduces range of high-energy positrons -- Potential implications for positron emission tomography

    International Nuclear Information System (INIS)

    Wirrwar, A.; Vosberg, H.; Herzog, H.; Halling, H.; Weber, S.; Mueller-Gaertner, H.W.; Forschungszentrum Juelich GmbH

    1997-01-01

    The authors have theoretically and experimentally investigated the extent to which homogeneous magnetic fields up to 7 Tesla reduce the spatial distance positrons travel before annihilation (positron range). Computer simulations of a noncoincident detector design using a Monte Carlo algorithm calculated the positron range as a function of positron energy and magnetic field strength. The simulation predicted improvements in resolution, defined as full-width at half-maximum (FWHM) of the line-spread function (LSF) for a magnetic field strength up to 7 Tesla: negligible for F-18, from 3.35 mm to 2.73 mm for Ga-68 and from 3.66 mm to 2.68 mm for Rb-82. Also a substantial noise suppression was observed, described by the full-width at tenth-maximum (FWTM) for higher positron energies. The experimental approach confirmed an improvement in resolution for Ga-68 from 3.54 mm at 0 Tesla to 2.99 mm FWHM at 4.5 Tesla and practically no improvement for F-18 (2.97 mm at 0 Tesla and 2.95 mm at 4.5 Tesla). It is concluded that the simulation model is appropriate and that a homogeneous static magnetic field of 4.5 Tesla reduces the range of high-energy positrons to an extent that may improve spatial resolution in positron emission tomography

  19. Collisions of singly and doubly charged ions with oxygen molecules in the energy range 1 - 1800 (3600) eV

    International Nuclear Information System (INIS)

    Kuen, I.; Howorka, F.

    1983-01-01

    Absolute cross sections for the excitation of optically emitting states in collisions of He + , Ne + , Ar + , Kr + , B + , He ++ , Ne ++ and Ar ++ with oxygen molecules are measured, the energy range of the ion being1 - 1800 eV Lab for the singly charged and 1 - 3600 eV for the doubly charged ions. Seven important processes can be distinguished: charge exchange excitation of O 2 + band, O I, O II, X I and X II lines (X + , X ++ being the primary ion), direct excitation of X II and double charge exchange excitations. The energy dependences of the excitation cross sections are remarkably different for different processes but similar for one process with different ions. The sum total of all cross sections together for excitations which lead to light emission is on the order of a few square angstroms at 1000 eV c.m. energy. The results are of interest for surface investigations, plasma diagnostics and laser work. (Author)

  20. Measurement of double differential cross sections of secondary neutrons in the incident energy range 9-13 MeV

    International Nuclear Information System (INIS)

    Tang Hongqing; Qi Bujia; Zhou Zuying; Sa Jun; Ke Zunjian; Sui Qingchang; Xia Haihong; Shen Guanren

    1992-01-01

    The status and technique of double differential cross section measurement of secondary neutrons in the incident neutron energy range 9 to 13 MeV is reviewed with emphasis on the work done at CIAE. There are scarce measurements of secondary neutron double differential cross sections in this energy region up to now. A main difficulty for this is lack of an applicable monoenergetic neutron source. When monoenergetic neutron energy reaches 8 Me/v, the break-up neutrons from the d + D or p + T reaction starts to become significant. It is difficult to get a pure secondary neutron spectrum induced only by monoenergetic neutrons. To solve this problem an abnormal fast neutron TOF facility was designed and tested. Double differential neutron emission cross sections of 238 U and 209 Bi at 10 MeV were obtained by combining the data measured by both normal and abnormal TOF spectrometers and a good agreement between measurement and calculation was achieved

  1. Optimization of whole-body simulator for photon emitters in the energy range 100 to 3000 KeV

    International Nuclear Information System (INIS)

    Dantas, Bernardo M.; Rosales, Geovana O.

    1996-01-01

    The calibration of the detection system for the in vivo determination of uniformly distributed radionuclides emitting photons in the energy range of 100 to 300 KeV requires the use of phantoms with dimensions close to the human body, in which known amounts of radionuclides are added. After the measurement of those phantoms, the calibration curves, channel x energy and energy x efficiency, are constructed. This type of phantom has been continuously optimized at the IRD-CNEN whole body counter with the objective of approximating its characteristics as close as possible to the standard man proposed in the ICRP 23. Furthermore, it has been tried to obtain a safe structure in terms of leakage and also of low cost. (author)

  2. Reduction of dark-band-like metal artifacts caused by dental implant bodies using hypothetical monoenergetic imaging after dual-energy computed tomography.

    Science.gov (United States)

    Tanaka, Ray; Hayashi, Takafumi; Ike, Makiko; Noto, Yoshiyuki; Goto, Tazuko K

    2013-06-01

    The aim of this study was to evaluate the usefulness of hypothetical monoenergetic images after dual-energy computed tomography (DECT) for assessment of the bone encircling dental implant bodies. Seventy-two axial images of implantation sites clipped out from image data scanned using DECT in dual-energy mode were used. Subjective assessment on reduction of dark-band-like artifacts (R-DBAs) and diagnosability of adjacent bone condition (D-ABC) in 3 sets of DECT images-a fused image set (DE120) and 2 sets of hypothetical monoenergetic images (ME100, ME190)-was performed and the results were statistically analyzed. With regards to R-DBAs and D-ABC, significant differences among DE120, ME100, and ME190 were observed. The ME100 and ME190 images revealed more artifact reduction and diagnosability than those of DE120. DECT imaging followed by hypothetical monoenergetic image construction can cause R-DBAs and increase D-ABC and may be potentially used for the evaluation of postoperative changes in the bone encircling implant bodies. Copyright © 2013 Elsevier Inc. All rights reserved.

  3. Enhancement of electrical conductivity of ion-implanted polymer films

    International Nuclear Information System (INIS)

    Brock, S.

    1985-01-01

    The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21 0 C +/- 1 0 C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F + , Ar + , or As + ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10 18 to 1 x 10 20 ions/m 2 . The conductivity of films implanted with As + was approximately one order greater than those implanted with Ar + , which in turn was approximately one-half order greater than those implanted with F + . The conductivity of the most conductive film ∼1 S/m) was almost 14 orders of magnitude greater than the pristine PET film. Except for the three PET samples implanted at fluences near 1 x 10 20 ions/m 2 with F + , Ar + , and As + ions, all implanted films were ohmic up to an electric field strength of 600 kV/m. The temperature dependence of the conductivity of the three PET films implanted near a fluence of 1 x 10 20 ions/m 2 was measured over the range of 80 K < T < 300 K

  4. The capabilities and constraints of the LEAP (Long-range Energy Alternatives Planning System) for development of energy matrix; As potencialidades e restricoes do LEAP (Long-range Energy Alternatives Planning System) para o desenvolvimento de matriz energetica

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Afonso Henriques Moreira [MS Consultoria Ltda, Itajuba, MG (Brazil); Universidade Federal de Itajuba (UNIFEI), MG (Brazil); Cruz, Ricardo Alexandre Passos da; Magalhaes, Ricardo Nogueira [IX Consultoria e Representacoes Ltda, Itajuba, MG (Brazil)

    2010-07-01

    This paper seeks to introduce and discuss the main features of the LEAP model preparing energy matrixes, in the medium and long term energy planning context. These characteristics are analyzed and compared to other known simulation models used worldwide, checking potentialities and existing barriers of using the LEAP program (author)

  5. Correlation of optical energy gap with the nearest neighbour short range order in amorphous V2O5 films

    International Nuclear Information System (INIS)

    Dhawan, Sahil; Vedeshwar, Agnikumar G; Tandon, R P

    2011-01-01

    The optical and structural properties of well characterized vacuum-evaporated amorphous V 2 O 5 films were studied in the thickness range 5-500 nm. The structural analyses show that V-O, O-O and V-V nearest neighbour distances defining the short range order vary nonlinearly with film thickness. The optical absorption shows thickness-dependent energy gap (E g ) and the nonlinear behaviour of thickness-dependent E g is similar to that of nearest neighbour distance with film thickness. The E g correlates linearly very well with all the three nearest neighbour distances. The variation of E g with film thickness is attributed to the residual stress in the film which causes the changes in short range order. The change in E g corresponding to the change in V-O distance was found to be 35 eV nm -1 . This change is almost three times of that with V-V distance.

  6. Cochlear Implants

    Science.gov (United States)

    ... implant, including: • How long a person has been deaf, •The number of surviving auditory nerve fibers, and • ... Implant, Severe Sensoryneurial Hearing Loss Get Involved Professional Development Practice Management ENT Careers Marketplace Privacy Policy Terms ...

  7. Optimization of L(+)-Lactic Acid Fermentation Without Neutralisation of Rhizopus Oryzae Mutant RK02 by Low-Energy Ion Implantation

    International Nuclear Information System (INIS)

    Li Wen; Wang Tao; Yang Yingge; Liu Dan; Fan Yonghong; Wang Dongmei; Yang Qian; Yao Jianming; Zheng Zhiming; Yu Zengliang

    2008-01-01

    In order to get an industrial strain which can yield a high concentration of lactic acid for ISPR (in situ product removal), the original strain Rhizopus oryzae RE3303 was mutated by low-energy ion beam implantation. A mutant RK02 was screened, and the factors such as the substrate concentration, nitrogen source concentration, inoculum size, seed age, aeration and temperature that affect the production of lactic acid were studied in detail. Under optimal conditions, the maximum concentration of L(+)-lactic acid reached 34.85 g/L after 30 h shake-flask cultivation without adding any neutralisation (5% Glucose added), which was a 146% increase in lactic acid production after ion implantation compared with the original strain. It was also shown that RK02 can be used in ISPR to reduce the number of times of separation.

  8. High-energy X-ray diffraction studies of short- and intermediate-range structure in oxide glasses

    International Nuclear Information System (INIS)

    Suzuya, Kentaro

    2002-01-01

    The feature of high-energy X-ray diffraction method is explained. The oxide glasses studies by using BL04B2, high-energy X-ray diffraction beam line of SPring-8, and the random system materials by high-energy monochromatic X-ray diffraction are introduced. An advantage of third generation synchrotron radiation is summarized. On SPring-8, the high-energy X-ray diffraction experiments of random system are carried out by BL04B2 and BL14B1 beam line. BL04B2 can select Si (111)(E=37.8 keV, λ=0.033 nm) and Si(220)(E=61.7 keV, λ=0.020 nm) as Si monochromator. The intermediate-range structure of (MgO) x (P 2 O 5 ) 1-x glass ,MgP 2 O 6 glass, B 2 O 3 glass, SiO 2 and GeO 2 are explained in detail. The future and application of high-energy X-ray diffraction are stated. (S.Y.)

  9. Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

    Science.gov (United States)

    Weinberg, I.; Jain, R. K.; Vargasaburto, C.; Wilt, D. M.; Scheiman, D. A.

    1995-01-01

    Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

  10. Neutron capture resonances in 56Fe and 58Fe in the energy range from 10 to 100 keV

    International Nuclear Information System (INIS)

    Kaeppeler, F.; Wisshak, K.; Hong, L.D.

    1982-11-01

    The neutron capture cross section of 56 Fe and 58 Fe has been measured in the energy range from 10 to 250 keV relative to the gold standard. A pulsed 3 MV Van de Graaff accelerator and the 7 Li(p, n) reaction served as a neutron source. Capture gamma rays were detected by two C 6 D 6 detectors, which were operated in coincidence and anticoincidence mode. Two-dimensional data acquisition allowed to apply the pulse height weighting technique off-line. The samples were located at a flight path of 60 cm. The total time resolution was 1.2 ns thus allowing for an energy resolution of 2 ns/m. The experimental set-up was optimized with respect to low background and low neutron sensitivity. The additional flight path of 4 cm from the sample to the detector was sufficient to discriminate capture of sample scattered neutrons by the additional time of flight. In this way reliable results were obtained even for the strong s-wave resonances of both isotopes. The experimental capture yield was analyzed with the FANAC code. The energy resolution allowed to extract resonance parameters in the energy range from 10 to 100 keV. The individual systematic uncertainties of the experimental method are discussed in detail. They were found to range between 5 and 10% while the statistical uncertainty is 3-5% for most of the resonances. A comparison to the results of other authors exhibits in case of 56 Fe systematic differences of 7-11%. For 58 Fe the present results differ up to 50% from the only other measurement for this isotope. (orig.) [de

  11. Short- and long-range energy strategies for Japan and the world after the Fukushima nuclear accident

    International Nuclear Information System (INIS)

    Muraoka, K.; Wagner, F.; Yamagata, Y.; Donné, A.J.H.

    2016-01-01

    The accident at the Fukushima Dai-ichi nuclear power station in 2011 has caused profound effects on energy policies in Japan and worldwide. This is particularly because it occurred at the time of the growing awareness of global warming forcing measures towards decarbonised energy production, namely the use of fossil fuels has to be drastically reduced from the present level of more than 80% by 2050. A dilemma has now emerged because nuclear power, a CO 2 -free technology with proven large-scale energy production capability, lost confidence in many societies, especially in Japan and Germany. As a consequence, there is a world-wide effort now to expand renewable energies (REs), specifically photo-voltaic (PV) and wind power. However, the authors conjecture that PV and wind power can provide only up to a 40% share of the electricity production as long as sufficient storage is not available. Beyond this level, the technological (high grid power) and economic problems (large surplus production) grow. This is the result of the analysis of the growing use of REs in the electricity systems for Germany and Japan. The key element to overcome this situation is to develop suitable energy storage technologies. This is particularly necessary when electricity will become the main energy source because also transportation, process heat and heating, will be supplied by it. Facing the difficulty in replacing all fossil fuels in all countries with different technology standards, a rapid development of carbon capture and storage (CCS) might also be necessary. Therefore, for the short-range strategy up to 2050, all meaningful options have to be developed. For the long-range strategy beyond 2050, new energy sources (such as thermonuclear fusion, solar fuels and nuclear power—if inherently safe concepts will gain credibility of societies again), and large-scale energy storage systems based on novel concepts (such as large-capacity batteries and hydrogen) is required. It is acknowledged

  12. Short- and long-range energy strategies for Japan and the world after the Fukushima nuclear accident

    Science.gov (United States)

    Muraoka, K.; Wagner, F.; Yamagata, Y.; Donné, A. J. H.

    2016-01-01

    The accident at the Fukushima Dai-ichi nuclear power station in 2011 has caused profound effects on energy policies in Japan and worldwide. This is particularly because it occurred at the time of the growing awareness of global warming forcing measures towards decarbonised energy production, namely the use of fossil fuels has to be drastically reduced from the present level of more than 80% by 2050. A dilemma has now emerged because nuclear power, a CO2-free technology with proven large-scale energy production capability, lost confidence in many societies, especially in Japan and Germany. As a consequence, there is a world-wide effort now to expand renewable energies (REs), specifically photo-voltaic (PV) and wind power. However, the authors conjecture that PV and wind power can provide only up to a 40% share of the electricity production as long as sufficient storage is not available. Beyond this level, the technological (high grid power) and economic problems (large surplus production) grow. This is the result of the analysis of the growing use of REs in the electricity systems for Germany and Japan. The key element to overcome this situation is to develop suitable energy storage technologies. This is particularly necessary when electricity will become the main energy source because also transportation, process heat and heating, will be supplied by it. Facing the difficulty in replacing all fossil fuels in all countries with different technology standards, a rapid development of carbon capture and storage (CCS) might also be necessary. Therefore, for the short-range strategy up to 2050, all meaningful options have to be developed. For the long-range strategy beyond 2050, new energy sources (such as thermonuclear fusion, solar fuels and nuclear power—if inherently safe concepts will gain credibility of societies again), and large-scale energy storage systems based on novel concepts (such as large-capacity batteries and hydrogen) is required. It is acknowledged

  13. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  14. Methane formation during deuteron bombardment of carbon in the energy range of 100 to 1500 eV

    International Nuclear Information System (INIS)

    Sone, K.

    1982-01-01

    Methane (CD 4 ) formation rates during deuteron bombardment of carbon (Papyex) have been measured in the energy range of 100 to 1500 eV. The temperature dependence of the methane formation rate is well explained by the model proposed by Erents et al. in the temperature range of 600 to 1150 K. The model, however, does not explain the dependence of the methane formation rate on the flux of incident deuterons at a certain temperature near Tsub(m) at which the formation rate has a maximum value. An alternative model is proposed in which the methane formation rate is assumed to be proportional to the product of the following three parameters: the surface concentration of deuterium atoms, the chemical reaction rate for the formation of methane, and the rate of production of vacancies on the surface by the deuteron bombardment. This model predicts an energy dependence of methane formation which has a maximum around 900 eV even at different deuteron fluxes, when the calculated result by Weissman and Sigmund is used for the surface deposited energy responsible for the production of vacancies. (author)

  15. A closed-form formulation for the build-up factor and absorbed energy for photons and electrons in the Compton energy range in Cartesian geometry

    Energy Technology Data Exchange (ETDEWEB)

    Borges, Volnei; Vilhena, Marco Tullio, E-mail: borges@ufrgs.b, E-mail: vilhena@pq.cnpq.b [Universidade Federal do Rio Grande do Sul (PROMEC/UFRGS), Porto Alegre, RS (Brazil). Programa de Pos-Graduacao em Engenharia Mecanica; Fernandes, Julio Cesar Lombaldo, E-mail: julio.lombaldo@ufrgs.b [Universidade Federal do Rio Grande do Sul (DMPA/UFRGS), Porto Alegre, RS (Brazil). Dept. de Matematica Pura e Aplicada. Programa de Pos Graduacao em Matematica Aplicada

    2011-07-01

    In this work, we report on a closed-form formulation for the build-up factor and absorbed energy, in one and two dimensional Cartesian geometry for photons and electrons, in the Compton energy range. For the one-dimensional case we use the LTS{sub N} method, assuming the Klein-Nishina scattering kernel for the determination of the angular radiation intensity for photons. We apply the two-dimensional LTS{sub N} nodal solution for the averaged angular radiation evaluation for the two-dimensional case, using the Klein-Nishina kernel for photons and the Compton kernel for electrons. From the angular radiation intensity we construct a closed-form solution for the build-up factor and evaluate the absorbed energy. We present numerical simulations and comparisons against results from the literature. (author)

  16. A closed-form formulation for the build-up factor and absorbed energy for photons and electrons in the Compton energy range in Cartesian geometry

    International Nuclear Information System (INIS)

    Borges, Volnei; Vilhena, Marco Tullio; Fernandes, Julio Cesar Lombaldo

    2011-01-01

    In this work, we report on a closed-form formulation for the build-up factor and absorbed energy, in one and two dimensional Cartesian geometry for photons and electrons, in the Compton energy range. For the one-dimensional case we use the LTS N method, assuming the Klein-Nishina scattering kernel for the determination of the angular radiation intensity for photons. We apply the two-dimensional LTS N nodal solution for the averaged angular radiation evaluation for the two-dimensional case, using the Klein-Nishina kernel for photons and the Compton kernel for electrons. From the angular radiation intensity we construct a closed-form solution for the build-up factor and evaluate the absorbed energy. We present numerical simulations and comparisons against results from the literature. (author)

  17. Measurement of home-made LaCl3 : Ce scintillation detector sensitivity with different energy points in range of fission energy

    International Nuclear Information System (INIS)

    Hu Mengchun; Li Rurong; Si Fenni

    2010-01-01

    Gamma rays of different energy were obtained in the range of fission energy by Compton scattering in intense 60 Co gamma source and the standard isotopic gamma sources which are 0.67 MeV 137 Cs and l.25 MeV 60 Co sources of point form. Sensitivity of LaCl 3 : Ce scintillator was measured in these gamma ray energy by a fast response scintillation detector with the home-made LaCl 3 : Ce scintillator. Results were normalized by the sensitivity to 0.67 MeV gamma ray. Sensitivity of LaCl 3 : Ce to 1.25 MeV gamma ray is about l.28. For ø40 mm × 2 mm LaCl 3 : Ce scintillator, the biggest sensitivity is l.18 and the smallest is 0.96 with gamma ray from 0.39 to 0.78 MeV. And for ø40 mm × 10 mm LaCl 3 : Ce scintillator, the biggest sensitivity is l.06 and the smallest is 0.98. The experimental results can provide references for theoretical study of the LaCl 3 : Ce scintillator and data to obtain the compounded sensitivity of LaCl 3 : Ce scintillator in the range of fission energy. (authors)

  18. Interplay of short-range correlations and nuclear symmetry energy in hard-photon production from heavy-ion reactions at Fermi energies

    Science.gov (United States)

    Yong, Gao-Chan; Li, Bao-An

    2017-12-01

    Within an isospin- and momentum-dependent transport model for nuclear reactions at intermediate energies, we investigate the interplay of the nucleon-nucleon short-range correlations (SRCs) and nuclear symmetry energy Esym(ρ ) on hard-photon spectra in collisions of several Ca isotopes on 112Sn and 124Sn targets at a beam energy of 45 MeV/nucleon. It is found that over the whole spectra of hard photons studied, effects of the SRCs overwhelm those owing to the Esym(ρ ) . The energetic photons come mostly from the high-momentum tails (HMTs) of single-nucleon momentum distributions in the target and projectile. Within the neutron-proton dominance model of SRCs based on the consideration that the tensor force acts mostly in the isosinglet and spin-triplet nucleon-nucleon interaction channel, there are equal numbers of neutrons and protons, thus a zero isospin asymmetry in the HMTs. Therefore, experimental measurements of the energetic photons from heavy-ion collisions at Fermi energies have the great potential to help us better understand the nature of SRCs without any appreciable influence by the uncertain Esym(ρ ) . These measurements will be complementary to but also have some advantages over the ongoing and planned experiments using hadronic messengers from reactions induced by high-energy electrons or protons. Because the underlying physics of SRCs and Esym(ρ ) are closely correlated, a better understanding of the SRCs will, in turn, help constrain the nuclear symmetry energy more precisely in a broad density range.

  19. Radioactive implants for medical applications; Radioaktive Implantate fuer medizinische Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, M.

    2008-07-01

    The long-term success of surgery is often diminished by excessive wound healing, which makes another intervention necessary. Locally applied radionuclides with short range radiation can prevent such benign hyperproliferation. As pure electron emitter with a half-life of 14.3 days and a mean energy of 694.9 keV (E{sub max}=1710.48 keV) {sup 32}P is a suitable radionuclide which can be produced from the stable {sup 31}P by the capture of thermal neutrons (1 x 10{sup 14} /s/cm{sup 2}) in a nuclear reactor. After a typical irradiation time (14 days) the ratio of {sup 32}P to {sup 31}P is 1.4 x 10{sup -5} to 1. Implants made of polymer and/or bioabsorbable material functioning as a carrier of the radioactive emitter allow - as opposed to metallic implants - for new applications for this type of radiotherapy. In this thesis a manufacturing method for previously not available organic, radioactive implants has been developed and a corresponding dosimetry system has been established. By means of ion implantation, {sup 32}P ions with up to 180 keV can be shot some 100 nm deep into organic implant materials. For a typical dose (15 Gy over 7 days, 1 mm distance from the implant) an activity of 75 kBq is needed corresponding to 1.3 x 10{sup 11} {sup 32}P ions. The sputter ion gun, which has been optimized for this application, creates an ion beam with high beam current (> 14 {mu}A P{sup -}) and low emittance (< 4 {pi} mm mrad {radical}(MeV)). Because of the good beam quality also small implants (<1 mm{sup 2}) can be manufactured with high efficiency. The unintentionally co-implanted portion of molecules and nuclides of the same mass (e.g. {sup 31}PH, {sup 16}O{sub 2} and {sup 32}S) could be reduced from approximately 500 to 50 by an improvement of the isotope selection at {sup 32}P beam creation. Hence, in comparison with the best hitherto existing implantation methods, the radiation dose of the implant could be reduced by an order of magnitude. With regard to the beta

  20. Critical coupling and coherent perfect absorption for ranges of energies due to a complex gain and loss symmetric system

    International Nuclear Information System (INIS)

    Hasan, Mohammad; Ghatak, Ananya; Mandal, Bhabani Prasad

    2014-01-01

    We consider a non-Hermitian medium with a gain and loss symmetric, exponentially damped potential distribution to demonstrate different scattering features analytically. The condition for critical coupling (CC) for unidirectional wave and coherent perfect absorption (CPA) for bidirectional waves are obtained analytically for this system. The energy points at which total absorption occurs are shown to be the spectral singular points for the time reversed system. The possible energies at which CC occurs for left and right incidence are different. We further obtain periodic intervals with increasing periodicity of energy for CC and CPA to occur in this system. -- Highlights: •Energy ranges for CC and CPA are obtained explicitly for complex WS potential. •Analytical conditions for CC and CPA for PT symmetric WS potential are obtained. •Conditions for left and right CC are shown to be different. •Conditions for CC and CPA are shown to be that of SS for the time reversed system. •Our model shows the great flexibility of frequencies for CC and CPA

  1. First operational experience with the LHC machine protection system when operating with beam energies beyond the 100MJ range

    CERN Document Server

    Assmann, R; Ferro-Luzzi, M; Goddard, B; Lamont, M; Schmidt, R; Siemko, A; Uythoven, J; Wenninger, J; Zerlauth, M

    2012-01-01

    The Large Hadron Collider (LHC) at CERN has made remarkable progress during 2011, surpassing its ambitious goal for the year in terms of luminosity delivered to the LHC experiments. This achievement was made possible by a progressive increase of beam intensities by more than 5 orders of magnitude during the first months of operation, reaching stored beam energies beyond the 100MJ range at the end of the year, less than a factor of 4 from the nominal design value. The correct functioning of the machine protection systems is vital during the different operational phases, for initial operation and even more when approaching nominal beam parameters where already a small fraction of the stored energy is sufficient to damage accelerator equipment or experiments in case of uncontrolled beam loss. Safe operation of the machine in presence of such high intensity proton beams is guaranteed by the interplay of many different systems: beam dumping system, beam interlocks, beam instrumentation, equipment monitoring, colli...

  2. Resolution of issues with renewable energy penetration in a long-range power system demand-supply planning

    International Nuclear Information System (INIS)

    Ogimoto, Kazuhiko; Ikeda, Yuichi; Kataoka, Kazuto; Ikegami, Takashi; Nonaka, Shunsuke; Azuma, Hitoshi

    2012-01-01

    Under the anticipated high penetration of variable renewable energy generation such as photovoltaic, the issue of supply demand balance should be evaluated and fixed. Technologies such as demand activation, and energy storage are expected to solve the issue. Under the situation, a long-range power system supply demand analysis should have the capability for the evaluation in its analysis steps of demand preparation, maintenance scheduling, and economic dispatch analysis. This paper presents results of a parametric analysis of the reduction of PV and Wind generation curtailment reduction by deployment of batteries. Based on a set of scenarios of the prospects of Japan's 10 power system demand-supply condition in 2030, the demand-supply balance capability are analyzed assuming PV and wind generation variation, demand activation and dispatchable batteries. (author)

  3. Study of the 2H(p,γ)3He reaction in the Big Bang Nucleosynthesis energy range at LUNA

    Science.gov (United States)

    Mossa, Viviana

    2018-01-01

    Deuterium is the first nucleus produced in the Universe, whose accumulation marks the beginning of the so called Big Bang Nucleosynthesis (BBN). Its primordial abundance is very sensitive to some cosmological parameters like the baryon density and the number of the neutrino families. Presently the main obstacle to an accurate theoretical deuterium abundance evaluation is due to the poor knowledge of the 2H(p,γ)3He cross section at BBN energies. The aim of the present work is to describe the experimental approach proposed by the LUNA collaboration, whose goal is to measure, with unprecedented precision, the total and the differential cross section of the reaction in the 30 < Ec.m. [keV] < 300 energy range.

  4. Neutron radiative capture by the 241Am nucleus in the energy range 1 keV-20 MeV

    International Nuclear Information System (INIS)

    Zolotarev, K.I.; Ignatyuk, A.V.; Tolstikov, V.A.; Tertychnyj, G.Ya.

    1998-01-01

    Production of high actinides leads to many technological problems in the nuclear power. The 241 Am(n,γ) 242 Am reaction is one of the sources of high actinide buildup. So a knowledge of the radiative capture cross-section of 241 Am for neutron energies up to 20 MeV is of considerable important for present day fission reactors and future advanced reactors. The main goal of this paper is the evaluation of the excitation function for the reaction 241 Am(n,γ) 242 Am in the energy range 1 keV-20 MeV. The evaluation was done on the basis of analysed experimental data, data from theoretical model calculations and systematic predictions for 14.5 MeV and 20 MeV. Data from the present evaluation are compared with the cross-section values given in the evaluations carried out earlier. (author)

  5. Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

    2004-07-01

    Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

  6. Interactions of hadrons in nuclear emulsion in the energy range 60 GeV - 400 GeV

    International Nuclear Information System (INIS)

    Holynski, R.

    1986-01-01

    Interactions of pions and protons in the energy range 60 GeV in nuclear emulsion have been analysed. The fragmentation process of the struck nucleus as well as the multiple production of relativistic particles have been investigated as a function of the primary energy and the effective thickness of the target. It is shown that both, the fragmentation of the target nucleus and particle production, can be described by models in which the projectile (or its constituents) undergoes multiple collisions inside the target nucleus. In particular the particle production in the projectile fragmentation region in pion-nucleus interactions is well described by the additive quark model. 47 refs., 35 figs., 2 tabs. (author)

  7. Status and progress in ion implantation technology for semiconductor device manufacturing

    International Nuclear Information System (INIS)

    Takahashi, Noriyuki

    1998-01-01

    Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

  8. Deuterium migration and trapping in uranium and uranium dioxide during D+ implantation

    International Nuclear Information System (INIS)

    Lewis, M.B.

    1980-01-01

    Uranium and UO 2 have been implanted with deuterium ions in the energy range 30-85 keV. Subsequently, the near surface regions (100-90000 Angstroem) of these samples were quantitatively profiled for deuterium oxygen using the method of ion beam microanalysis. Mean ranges and widths of the implanted ions were measured and compared with theoretical predictions. Fully oxidized samples were compared with those having only thin oxide films on their surfaces. While the deuterium appeared to migrate during its implantation in uranium, little or no migration appeared either during or after implantation in UO 2 . Further measurements suggest that thin surface oxide films strongly trap the deuterium migrating beneath the surface. It is suggested that the electronic energy loss of the ion beam lowers the effective activation energy for the formation of OD bonds near the target surface. (orig.)

  9. Ion implantation induced nanotopography on titanium and bone cell adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

    2014-08-15

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  10. Ion implantation induced nanotopography on titanium and bone cell adhesion

    International Nuclear Information System (INIS)

    Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; Maeztu, Miguel Ángel de

    2014-01-01

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm 2 ) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  11. Polarized beam asymmetry for. gamma. d. -->. Peta in the energy range 0. 4-0. 8 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Adamyan, F.V.; Arustamyan, G.V.; Galumyan, P.I.; Grabsky, V.H.; Hakopyan, H.H.; Karapetyan, V.V.; Vartapetyan, H.A.

    1983-01-01

    Measurements of the polarized beam asymmetry for deuteron photodisintegration ..gamma..d ..-->.. Peta have been carried out in the energy range E/sub ..gamma../ = 0.4-0.8 GeV and at angles theta/sub p//sup cm/ = 45/sup 0/-75/sup 0/. The results obtained are in disagreement with theoretical predictions which take into account the dibaryon resonance contribution. The data qualitative analysis indicates the weakness of isoscalar dibaryon amplitudes near E/sub ..gamma../ = 400 MeV. 8 references, 1 figure.

  12. Experimental search for solar hidden photons in the eV energy range using kinetic mixing with photons

    International Nuclear Information System (INIS)

    Mizumoto, T.; Ohta, R.; Horie, T.; Suzuki, J.; Minowa, M.; Inoue, Y.

    2013-01-01

    We have searched for solar hidden photons in the eV energy range using a dedicated hidden photon detector. The detector consisted of a parabolic mirror with a diameter of 500 mm and a focal length of 1007 mm installed in a vacuum chamber, and a photomultiplier tube at its focal point. The detector was attached to the Tokyo axion helioscope, Sumico which has a mechanism to track the sun. From the result of the measurement, we found no evidence for the existence of hidden photons and set a limit on the photon-hidden photon mixing parameter χ depending on the hidden photon mass m γ'

  13. U.S. Department of Energy NESHAP Annual Report for CY 2014 Sandia National Laboratories Tonopah Test Range

    Energy Technology Data Exchange (ETDEWEB)

    Evelo, Stacie [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Miller, Mark L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-05-01

    This National Emission Standards for Hazardous Air Pollutants (NESHAP) Annual Report has been prepared in a format to comply with the reporting requirements of 40 CFR 61.94 and the April 5, 1995 Memorandum of Agreement (MOA) between the Department of Energy (DOE) and the Environmental Protection Agency (EPA). According to the EPA approved NESHAP Monitoring Plan for the Tonopah Test Range (TTR), 40 CFR 61, subpart H, and the MOA, no additional monitoring or measurements are required at TTR in order to demonstrate compliance with the NESHAP regulation.

  14. Damage and in-situ annealing during ion implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Washburn, J.; Byrne, P.F.; Cheung, N.W.

    1982-11-01

    Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100 0 C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100 0 C does not produce α layers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400 0 C. It was found that isolated small α zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200 0 C. A model for in situ annealing during implantation is presented

  15. Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

    Science.gov (United States)

    Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

    2015-12-01

    Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

  16. Implants for orthodontic anchorage

    Science.gov (United States)

    Zheng, Xiaowen; Sun, Yannan; Zhang, Yimei; Cai, Ting; Sun, Feng; Lin, Jiuxiang

    2018-01-01

    Abstract Implantanchorage continues to receive much attention as an important orthodontic anchorage. Since the development of orthodontic implants, the scope of applications has continued to increase. Although multiple reviews detailing implants have been published, no comprehensive evaluations have been performed. Thus, the purpose of this study was to comprehensively evaluate the effects of implants based on data published in review articles. An electronic search of the Cochrane Library, Medline, Embase, Ebsco and Sicencedirect for reviews with “orthodontic” and “systematic review or meta analysis” in the title, abstract, keywords, or full text was performed. A subsequent manual search was then performed to identify reviews concerning orthodontic implants. A manual search of the orthodontic journals American Journal of Orthodontics and Dentofacial Orthopedics (AJODO), European Journal of Orthodontics (EJO), and Angle Othodontist was also performed. Such systematic reviews that evaluated the efficacy and safety of orthodontic implants were used to indicate success rates and molar movements. A total of 23 reviews were included in the analysis. The quality of each review was assessed using a measurement tool for Assessment of Multiple Systematic Reviews (AMSTAR), and the review chosen to summarize outcomes had a quality score of >6. Most reviews were less than moderate quality. Success rates of implants ranged in a broad scope, and movement of the maxillary first molar was superior with implants compared with traditional anchorage. PMID:29595673

  17. Report of the subpanel on long-range planning for the US High-Energy-Physics Program of the High-Energy-Physics Advisory Panel

    International Nuclear Information System (INIS)

    1982-01-01

    The US High Energy Program remains strong, but it faces vigorous competition from other regions of the world. To maintain its vitality and preeminence over the next decade it requires the following major ingredients: (1) strong exploitation of existing facilities; (2) the expeditious completion of construction projects which will expand these facilities over the next few years; (3) the construction of a substantial new facility to be ready for research by the end of the 1980's; and (4) the vigorous pursuit of a wide range of advanced accelerator R and D programs in preparation for the design and construction of a higher energy accelerator which would probably be initiated near the end of this decade. The Subpanel has considered how best to accomplish these goals under two different budgetary assumptions; namely, average yearly support levels of $440M DOE, $35M NSF, and $395M DOE, $34M NSF (FY 1982 dollars). It has also considered the impact of a yet lower support level of $360M DOE and $32M NSF. A description of facilities in high energy physics is given, and facility recommendations and long range plans are discussed. Recommendations for international collaboration are included

  18. Possibility of a 4He2 bound state, effective range theory, and very low energy He--He scattering

    International Nuclear Information System (INIS)

    Uang, Y.; Stwalley, W.C.

    1982-01-01

    The best available intermolecular potential for helium by Aziz, Nain, Carley, Taylor, and McConville is shown here for the first time to have a 4 He 2 bound state. Two numerical analyses, namely, eigenvalue solution and effective range theory, are used to support this conclusion. Unlike usual chemically bound species, the binding energy of this very weakly bound level is found to be only 8.3 x 10 -4 K, which is four orders of magnitude smaller than the potential well depth epsilon = 10.8 K. The scattering length for He+He collisions, determined from effective range theory, is used to calculate the elastic cross section in the very low energy limit. The results (1.878 x 10 5 A 2 for 4 He+ 4 He and 6.035 x 10 2 A for 3 He+ 3 He) are consistent with measurements at the lowest velocities yet attained. In terms of the estimated uncertainties of the parameters of the potential of Aziz and co-workers, it is shown that it is very likely that a bound state of the 4 He 2 molecule does in fact exist

  19. Home on the range: workers and wildlife tread warily between astronomical underground flows of energy and live shells

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, A

    1998-04-06

    On a 2,600 square kilometres parcel of grassland that was once home to 300 species of dinosaurs, three Canadian entities, the military, the Alberta Energy Company and a community of rare and endangered animals provide an example of peaceful co-existence. For eight months of the year the Alberta Energy Company shares the land with Canadian and British military units; all shallow wells have been placed underground so the military can hold annual live-fire exercises. Gas reservoirs exists beneath 57 square kilometres of the range lying at 1,000 metres depth at 4,540 pounds of pressure, which can be increased to 2,050 pounds. The surface of the Suffield range belongs to the federal government, the mineral rights are held by the Province of Alberta, and proghorn antelopes, apparently unconcerned, graze on the ground as if the land belonged to them. They, and the golden eagles that nest in the banks of the South Saskatchewan River appear to be surviving the activities of their two giant co-habitants relatively well.

  20. Study of the 2H(p,γ)3He reaction in the BBN energy range at LUNA

    Science.gov (United States)

    Trezzi, Davide; LUNA Collaboration

    2018-01-01

    Using Big Bang Nucleosynthesis with the recent cosmological parameters obtained by the Planck collaboration, a primordial deuterium abundance value D/H = (2.65 ± 0.07) × 10-5 is obtained. This one is a little bit in tension with astronomical observations on metal- poor damped Lyman alpha systems where D/H = (2.53 ± 0.04) × 105. In order to reduce the BBN calculation uncertainty, a measurement of the 2H(p,γ)3He cross section in the energy range 10-300 keV with a 3% accuracy is thus desirable. Thanks to the low background of the underground Gran Sasso Laboratories, and to the experience accumulated in more than twenty years of scientific activity, LUNA (Laboratory for Underground Nuclear Astrophysics) planned to measure the 2H(p,γ)3He fusion cross section at the BBN energy range in 2015-2016. A feasibility test of the measurement has been recently performed at LUNA. In this paper, the results obtained will be shown. Possible cosmological outcomes from the future LUNA data will be also discussed.

  1. Home on the range: workers and wildlife tread warily between astronomical underground flows of energy and live shells

    International Nuclear Information System (INIS)

    Lorenz, A.

    1998-01-01

    On a 2,600 square kilometres parcel of grassland that was once home to 300 species of dinosaurs, three Canadian entities, the military, the Alberta Energy Company and a community of rare and endangered animals provide an example of peaceful co-existence. For eight months of the year the Alberta Energy Company shares the land with Canadian and British military units; all shallow wells have been placed underground so the military can hold annual live-fire exercises. Gas reservoirs exists beneath 57 square kilometres of the range lying at 1,000 metres depth at 4,540 pounds of pressure, which can be increased to 2,050 pounds. The surface of the Suffield range belongs to the federal government, the mineral rights are held by the Province of Alberta, and proghorn antelopes, apparently unconcerned, graze on the ground as if the land belonged to them. They, and the golden eagles that nest in the banks of the South Saskatchewan River appear to be surviving the activities of their two giant co-habitants relatively well

  2. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  3. Effects of chiral three-nucleon forces on 4He-nucleus scattering in a wide range of incident energies

    Science.gov (United States)

    Toyokawa, Masakazu; Yahiro, Masanobu; Matsumoto, Takuma; Kohno, Michio

    2018-02-01

    An important current subject is to clarify the properties of chiral three-nucleon forces (3NFs) not only in nuclear matter but also in scattering between finite-size nuclei. Particularly for elastic scattering, this study has just started and the properties are not understood for a wide range of incident energies (E_in). We investigate basic properties of chiral 3NFs in nuclear matter with positive energies by using the Brueckner-Hartree-Fock method with chiral two-nucleon forces at N3LO and 3NFs at NNLO, and analyze the effects of chiral 3NFs on 4He elastic scattering from targets ^{208}Pb, ^{58}Ni, and ^{40}Ca over a wide range of 30 ≲ E_in/A_P ≲ 200 MeV by using the g-matrix folding model, where A_P is the mass number of the projectile. In symmetric nuclear matter with positive energies, chiral 3NFs make the single-particle potential less attractive and more absorptive. The effects mainly come from the Fujita-Miyazawa 2π-exchange 3NF and become slightly larger as E_in increases. These effects persist in the optical potentials of 4He scattering. As for the differential cross sections of 4He scattering, chiral-3NF effects are large for E_in/A_P ≳ 60 MeV and improve the agreement of the theoretical results with the measured ones. Particularly for E_in/A_P ≳ 100 MeV, the folding model reproduces measured differential cross sections pretty well. Cutoff (Λ) dependence is investigated for both nuclear matter and 4He scattering by considering two cases of Λ=450 and 550 MeV. The uncertainty coming from the dependence is smaller than chiral-3NF effects even at E_in/A_P=175 MeV.

  4. Upgrades of DARWIN, a dose and spectrum monitoring system applicable to various types of radiation over wide energy ranges

    Science.gov (United States)

    Sato, Tatsuhiko; Satoh, Daiki; Endo, Akira; Shigyo, Nobuhiro; Watanabe, Fusao; Sakurai, Hiroki; Arai, Yoichi

    2011-05-01

    A dose and spectrum monitoring system applicable to neutrons, photons and muons over wide ranges of energy, designated as DARWIN, has been developed for radiological protection in high-energy accelerator facilities. DARWIN consists of a phoswitch-type scintillation detector, a data-acquisition (DAQ) module for digital waveform analysis, and a personal computer equipped with a graphical-user-interface (GUI) program for controlling the system. The system was recently upgraded by introducing an original DAQ module based on a field programmable gate array, FPGA, and also by adding a function for estimating neutron and photon spectra based on an unfolding technique without requiring any specific scientific background of the user. The performance of the upgraded DARWIN was examined in various radiation fields, including an operational field in J-PARC. The experiments revealed that the dose rates and spectra measured by the upgraded DARWIN are quite reasonable, even in radiation fields with peak structures in terms of both spectrum and time variation. These results clearly demonstrate the usefulness of DARWIN for improving radiation safety in high-energy accelerator facilities.

  5. Testing and Comparison of Imaging Detectors for Electrons in the Energy Range 10-20 keV

    Science.gov (United States)

    Matheson, J.; Moldovan, G.; Kirkland, A.; Allinson, N.; Abrahams, J. P.

    2017-11-01

    Interest in direct detectors for low-energy electrons has increased markedly in recent years. Detection of electrons in the energy range up to low tens of keV is important in techniques such as photoelectron emission microscopy (PEEM) and electron backscatter diffraction (EBSD) on scanning electron microscopes (SEMs). The PEEM technique is used both in the laboratory and on synchrotron light sources worldwide. The ubiquity of SEMs means that there is a very large market for EBSD detectors for materials studies. Currently, the most widely used detectors in these applications are based on indirect detection of incident electrons. Examples include scintillators or microchannel plates (MCPs), coupled to CCD cameras. Such approaches result in blurring in scintillators/phosphors, distortions in optical systems, and inefficiencies due the limited active area of MCPs. In principle, these difficulties can be overcome using direct detection in a semiconductor device. Growing out of a feasibility study into the use of a direct detector for use on an XPEEM, we have built at Rutherford Appleton Laboratory a system to illuminate detectors with an electron beam of energy up to 20 keV . We describe this system in detail. It has been used to measure the performance of a custom back-thinned monolithic active pixel sensor (MAPS), a detector based on the Medipix2 chip, and a commercial detector based on MCPs. We present a selection of the results from these measurements and compare and contrast different detector types.

  6. Upgrades of DARWIN, a dose and spectrum monitoring system applicable to various types of radiation over wide energy ranges

    International Nuclear Information System (INIS)

    Sato, Tatsuhiko; Satoh, Daiki; Endo, Akira; Shigyo, Nobuhiro; Watanabe, Fusao; Sakurai, Hiroki; Arai, Yoichi

    2011-01-01

    A dose and spectrum monitoring system applicable to neutrons, photons and muons over wide ranges of energy, designated as DARWIN, has been developed for radiological protection in high-energy accelerator facilities. DARWIN consists of a phoswitch-type scintillation detector, a data-acquisition (DAQ) module for digital waveform analysis, and a personal computer equipped with a graphical-user-interface (GUI) program for controlling the system. The system was recently upgraded by introducing an original DAQ module based on a field programmable gate array, FPGA, and also by adding a function for estimating neutron and photon spectra based on an unfolding technique without requiring any specific scientific background of the user. The performance of the upgraded DARWIN was examined in various radiation fields, including an operational field in J-PARC. The experiments revealed that the dose rates and spectra measured by the upgraded DARWIN are quite reasonable, even in radiation fields with peak structures in terms of both spectrum and time variation. These results clearly demonstrate the usefulness of DARWIN for improving radiation safety in high-energy accelerator facilities.

  7. Measurements and Monte Carlo calculations with the extended-range Bonner sphere spectrometer at high-energy mixed fields

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00406842; Bay, Aurelio; Silari, Marco; Aroua, Abbas

    The use of spectrometry to provide information for neutron radiation protection has become an increasingly important activity over recent years. The need for spectral data arises because neither area survey instruments nor personal dosimeters give the correct dose equivalent results at all neutron energies. It is important therefore to know the spectra of the fields in which these devices are used. One of the systems most commonly employed in neutron spectrometry and dosimetry is the Bonner Sphere Spectrometers (BSS). The extended- range BSS that was used for this work, consists of 7 spheres with an overall response to neutrons up to 2 GeV. A 3He detector is used as a thermal counter in the centre of each sphere. In the context of this thesis the BSS was calibrated in monoenergetic neutron fields at low and intermediate energies. It was also used for measurements in several high energy mixed fields. These measurements have led to the calculation of neutron yields and spectral fluences from unshielded targets....

  8. Characterisation of a monolithic active pixel sensor for electron detection in the energy range 10-20 keV

    International Nuclear Information System (INIS)

    Matheson, J.; Moldovan, G.; Clark, A.; Prydderch, M.; Turchetta, R.; Derbyshire, G.; Kirkland, A.; Allinson, N.

    2009-01-01

    As part of a feasibility study into the use of novel electron detectors for X-ray photoelectron emission microscopes (XPEEM), we have characterised the imaging performance of a back-illuminated monolithic active pixel sensor (MAPS) operating under both integrating and counting modes for electrons in the energy range 10-20 keV. For integrating mode, we present the detective quantum efficiency (DQE), which shows marked improvements over conventional indirect detectors based on microchannel plates. We also present the modulation transfer function (MTF) and noise power spectrum (NPS), again demonstrating significantly improved performance. For counting mode, we present the quantum efficiency (QE) as a function of incident electron energy. We have evaluated the charge collection efficiency (CCE) and we thereby demonstrate the presence of a ∼200 nm thick dead layer that is linked with reduced CCE at low electron energies. Based on our findings, we believe that the MAPS technology is well matched to future XPEEM instruments using aberration correction.

  9. Quantum mechanical free energy profiles with post-quantization restraints: Binding free energy of the water dimer over a broad range of temperatures.

    Science.gov (United States)

    Bishop, Kevin P; Roy, Pierre-Nicholas

    2018-03-14

    Free energy calculations are a crucial part of understanding chemical systems but are often computationally expensive for all but the simplest of systems. Various enhanced sampling techniques have been developed to improve the efficiency of these calculations in numerical simulations. However, the majority of these approaches have been applied using classical molecular dynamics. There are many situations where nuclear quantum effects impact the system of interest and a classical description fails to capture these details. In this work, path integral molecular dynamics has been used in conjunction with umbrella sampling, and it has been observed that correct results are only obtained when the umbrella sampling potential is applied to a single path integral bead post quantization. This method has been validated against a Lennard-Jones benchmark system before being applied to the more complicated water dimer system over a broad range of temperatures. Free energy profiles are obtained, and these are utilized in the calculation of the second virial coefficient as well as the change in free energy from the separated water monomers to the dimer. Comparisons to experimental and ground state calculation values from the literature are made for the second virial coefficient at higher temperature and the dissociation energy of the dimer in the ground state.

  10. Ionization Energies, Electron Affinities, and Polarization Energies of Organic Molecular Crystals: Quantitative Estimations from a Polarizable Continuum Model (PCM)–Tuned Range-Separated Density Functional Approach

    KAUST Repository

    Sun, Haitao

    2016-05-16

    We propose a new methodology for the first-principles description of the electronic properties relevant for charge transport in organic molecular crystals. This methodology, which is based on the combination of a non-empirical, optimally tuned range-separated hybrid functional with the polarizable continuum model, is applied to a series of eight representative molecular semiconductor crystals. We show that it provides ionization energies, electron affinities, and transport gaps in very good agreement with experimental values as well as with the results of many-body perturbation theory within the GW approximation at a fraction of the computational costs. Hence, this approach represents an easily applicable and computationally efficient tool to estimate the gas-to-crystal-phase shifts of the frontier-orbital quasiparticle energies in organic electronic materials.

  11. Implantation damage in heavy gas implanted 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C. [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France); Nicolaï, J., E-mail: julien.nicolai@univ-poitiers.fr [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France); Declémy, A. [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France); Gilabert, E. [Centre d’Etude Nucléaire de Bordeaux-Gradignan, 33175 Gradignan Cedex (France); Beaufort, M.-F.; Barbot, J.-F. [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France)

    2016-05-01

    Single crystals of SiC were implanted with heavy inert gases (Xe, Ar) at elevated temperatures (300–800 °C) and for a large range of fluence (1 × 10{sup 12}–1 × 10{sup 15} ions cm{sup −2}). Thermodesorption measurements suggest that gas is trapped by implantation-induced vacancy-type defects impeding any gas diffusion. The damage accumulation versus dose was studied through the tensile elastic strain determined by using X-ray diffraction. Results show that at low dose the strain is predictable via a thermally activated direct impact model. The low thermal activation energy at saturation suggests a dynamic recovery process dominated by the migration of interstitial-type defects as its relaxation during post thermal annealing. As compared with light-gas implantation the heavy-gas to defect ratio is low enhancing the formation of strongly perturbed zones rather than the formation of bubble precursors.

  12. Quantitative ion implantation

    International Nuclear Information System (INIS)

    Gries, W.H.

    1976-06-01

    This is a report of the study of the implantation of heavy ions at medium keV-energies into electrically conducting mono-elemental solids, at ion doses too small to cause significant loss of the implanted ions by resputtering. The study has been undertaken to investigate the possibility of accurate portioning of matter in submicrogram quantities, with some specific applications in mind. The problem is extensively investigated both on a theoretical level and in practice. A mathematical model is developed for calculating the loss of implanted ions by resputtering as a function of the implanted ion dose and the sputtering yield. Numerical data are produced therefrom which permit a good order-of-magnitude estimate of the loss for any ion/solid combination in which the ions are heavier than the solid atoms, and for any ion energy from 10 to 300 keV. The implanted ion dose is measured by integration of the ion beam current, and equipment and techniques are described which make possible the accurate integration of an ion current in an electromagnetic isotope separator. The methods are applied to two sample cases, one being a stable isotope, the other a radioisotope. In both cases independent methods are used to show that the implantation is indeed quantitative, as predicted. At the same time the sample cases are used to demonstrate two possible applications for quantitative ion implantation, viz. firstly for the manufacture of calibration standards for instrumental micromethods of elemental trace analysis in metals, and secondly for the determination of the half-lives of long-lived radioisotopes by a specific activity method. It is concluded that the present study has advanced quantitative ion implantation to the state where it can be successfully applied to the solution of problems in other fields

  13. Breeding of Coenzyme Q10 Produced Strain by Low-Energy Ion Implantation and Optimization of Coenzyme Q10 Fermentation

    International Nuclear Information System (INIS)

    Xu Dejun; Zheng Zhiming; Wang Peng; Wang Li; Yuan Hang; Yu Zengliang

    2008-01-01

    In order to increase the production efficiency of coenzyme Q 10 , the original strain Agrobacterium tumefaciens ATCC 4452 was mutated by means of Nitrogen ions implantation. A mutant strain, ATX 12, with high contents of coenzyme Q 10 was selected. Subsequently, the conditions such as carbohydrate concentration, nitrogen source concentration, inoculum's size, seed age, aeration and temperature which might affect the production of CoQ 10 were investigated in detail. Under optimal conditions, the maximum concentration of the intracellular CoQ 10 reached 200.3 mg/L after 80 h fed-batch fermentation, about 245% increasing in CoQ 10 production after ion implantation, compared to the original strain. (ion beam bioengineering)

  14. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

    Science.gov (United States)

    Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

    2018-02-01

    This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

  15. Biological effects of implanted nuclear energy sources for artificial heart devices. Progress report, September 1, 1975--August 31, 1976

    International Nuclear Information System (INIS)

    Kallfelz, F.A.; Wentworth, R.A.; Cady, K.B.

    1976-01-01

    A total of sixty dogs were implanted with radioisotope-powered artificial heart systems producing radiation fluxes similar to that of plutonium-238, but having no associated heat, at levels of from one to seventy times the radiation flux expected from a 30-watt plutonium-238 source. Results from studies lasting up to 6 years after implantation indicate that these animals, and by inference human beings, may be able to tolerate the radiation flux from 30-watt 238 Pu power sources. Results of heat dissipation studies in calves indicate that it may be possible to induce a vascularized connective tissue capsule sufficient to dissipate 30 watts of additional heat from a surface area of approximately 500 cm sq., allowing a heat flux of 0.06 watts per cm sq

  16. Electricity demand and supply scenarios for Maharashtra (India) for 2030: An application of long range energy alternatives planning

    International Nuclear Information System (INIS)

    Kale, Rajesh V.; Pohekar, Sanjay D.

    2014-01-01

    Forecasting of electricity demand has assumed a lot of importance to provide sustainable solutions to the electricity problems. LEAP has been used to forecast electricity demand for the target year 2030, for the state of Maharashtra (India). Holt’s exponential smoothing method has been used to arrive at suitable growth rates. Probable projections have been generated using uniform gross domestic product (GDP) growth rate and different values of elasticity of demands. Three scenarios have been generated which include Business as Usual (BAU), Energy Conservation (EC) and Renewable Energy (REN). Subsequent analysis on the basis of energy, environmental influence and cost has been done. In the target year 2030, the projected electricity demand for BAU and REN has increased by 107.3 per cent over the base year 2012 and EC electricity demand has grown by 54.3 per cent. The estimated values of green house gas (GHG) for BAU and EC, in the year 2030, are 245.2 per cent and 152.4 per cent more than the base year and for REN it is 46.2 per cent less. Sensitivity analysis has been performed to study the effect on the total cost of scenarios. Policy implications in view of the results obtained are also discussed. - Highlights: • Forecasted electricity scenarios by Long Range Energy Alternatives Planning (LEAP). • Critically analyzed the demand and supply prior to 2012 for a period of six years. • Used Holt’s exponential smoothing method ARIMA (0,1,1) for finding growth rates. • Devised suitable LEAP model for the generated scenarios. • Discussed policy implications for the generated scenarios

  17. HESS J1427−608: AN UNUSUAL HARD, UNBROKEN γ -RAY SPECTRUM IN A VERY WIDE ENERGY RANGE

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiao-Lei; Gao, Wei-Hong [Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210046 (China); Xin, Yu-Liang; Liao, Neng-Hui; Yuan, Qiang; He, Hao-Ning; Fan, Yi-Zhong; Liu, Si-Ming, E-mail: yuanq@pmo.ac.cn, E-mail: gaoweihong@njnu.edu.cn, E-mail: liusm@pmo.ac.cn [Key Laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China)

    2017-01-20

    We report the detection of a GeV γ -ray source that spatially overlaps and is thus very likely associated with the unidentified very high energy (VHE) γ -ray source HESS J1427−608 with the Pass 8 data recorded by the Fermi Large Area Telescope . The photon spectrum of this source is best described by a power law with an index of 1.85 ± 0.17 in the energy range of 3–500 GeV, and the measured flux connects smoothly with that of HESS J1427−608 at a few hundred gigaelectronvolts. This source shows no significant extension and time variation. The broadband GeV to TeV emission over four decades of energies can be well fitted by a single power-law function with an index of 2.0, without obvious indication of spectral cutoff toward high energies. Such a result implies that HESS J1427−608 may be a PeV particle accelerator. We discuss the possible nature of HESS J1427−608 according to the multiwavelength spectral fittings. Given the relatively large errors, either a leptonic or a hadronic model can explain the multiwavelength data from radio to VHE γ -rays. The inferred magnetic field strength is a few micro-Gauss, which is smaller than the typical values of supernova remnants (SNRs) and is consistent with some pulsar wind nebulae (PWNe). On the other hand, the flat γ -ray spectrum is slightly different from typical PWNe but is similar to that of some known SNRs.

  18. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    International Nuclear Information System (INIS)

    Boucard, F.; Roger, F.; Chakarov, I.; Zhuk, V.; Temkin, M.; Montagner, X.; Guichard, E.; Mathiot, D.

    2005-01-01

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling

  19. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    Energy Technology Data Exchange (ETDEWEB)

    Boucard, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France)]. E-mail: Frederic.Boucard@silvaco.com; Roger, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Chakarov, I. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Zhuk, V. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Temkin, M. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Montagner, X. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Guichard, E. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Mathiot, D. [InESS, CNRS and Universite Louis Pasteur, 23 Rue du Loess, F67037 Strasbourg (France)]. E-mail: Daniel.Mathiot@iness.c-strasbourg.fr

    2005-12-05

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling.

  20. Study of the influence of air exposure on graphite implanted by low energy high density deuterium plasma

    International Nuclear Information System (INIS)

    Fernandez, V.; Bardon, J.; Palmari, J.P.; Grisolia, C.

    1990-01-01

    A study of the influence of air exposure on the content of Deuterium implanted graphite was done for different exposure durations and different gas exposures. Important reduction of the D 2 thermodesorbed is shown to result from the formation of deuterated compounds during the desorption, the total amount of deuterium desorbed remaining unchanged. Some informations on the mechanisms of the interactions can be obtained by the comparison of the different experiments