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Sample records for energy boron implantation

  1. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  2. Low energy implantation of boron with decaborane ions

    Science.gov (United States)

    Albano, Maria Angela

    The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

  3. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  4. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  5. The role of the substrate in the high energy boron implantation damage recovering

    International Nuclear Information System (INIS)

    Mica, I.; Di Piazza, L.; Laurin, L.; Mariani, M.; Mauri, A.G.; Polignano, M.L.; Ricci, E.; Sammiceli, F.; Spoldi, G.

    2009-01-01

    In this work the role of the Si substrate in the high energy boron implantation damage recovering is studied. The boron implants were carried out in Czochralski grown (1 0 0) polished Si substrates as well as in epitaxial Si layers grown on (1 0 0) Si by chemical vapor deposition. The boron implantation dose was 2 x 10 14 cm -2 and the implantation energy was 600 keV. The recovery annealing was a furnace annealing at 1000 deg. C for 40 min. The defects formed by high energy boron implantation have been observed with transmission electron microscopy (TEM). In order to increase the statistics some junctions were formed on the buried p-well and electrically characterized. For the epitaxial wafers it was found that the number and the size of the dislocations change according to the doping of the substrate. For the Czochralski wafers it was found that the morphology and the size of the dislocations change according to the presence of the wafer pre-annealing (whether conventional furnace annealing or Magic Denuded Zone process).

  6. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  7. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  8. Ion implantation of boron in germanium

    International Nuclear Information System (INIS)

    Jones, K.S.

    1985-05-01

    Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

  9. Diffusion modelling of low-energy ion-implanted BF{sub 2} in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, J. [Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)], E-mail: Jerome.Marcon@univ-rouen.fr; Merabet, A. [Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, 19000 Setif (Algeria)

    2008-12-05

    We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF{sub 2}{sup +}. We have used published data for BF{sub 2}{sup +} implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data.

  10. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  11. Microhardness of boron, titanium, and nitrogen implanted steel

    International Nuclear Information System (INIS)

    Sowa, M.; Szyszko, W.; Sielanko, J.; Glusiec, L.

    1989-01-01

    Mechanically polished steel (1H18N9T) and (15GTM) samples are implanted with boron, titanium, and nitrogen ions, with dose ranging from 10 16 to 10 17 ions/cm 2 . The implantation energy varied from 100 to 250 keV. Implanted samples are heat-treated at 400 to 800 0 C in vacuum. The microhardness of implanted samples is measured by using a Hanneman tester with loads ranging from 2 to 40 g. The influence of annealing temperature on microhardness of the implanted layers is determined. The diffusion of boron from the implanted layers is also investigated by using the secondary ion mass spectrometer. The diffusion coefficients of boron in steel are determined. (author)

  12. Depth profiling of boron implanted silicon by positron beam

    International Nuclear Information System (INIS)

    Oevuenc, S.

    2004-01-01

    Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

  13. Depth resolved investigations of boron implanted silicon

    Science.gov (United States)

    Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

    2003-01-01

    We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

  14. Tribological properties of nitrogen implanted and boron implanted steels

    International Nuclear Information System (INIS)

    Kern, K.T.

    1996-01-01

    Samples of a steel with high chrome content was implanted separately with 75 keV nitrogen ions and with 75 keV boron ions. Implanted doses of each ion species were 2-, 4-, and 8 x 10 17 /cm 2 . Retained doses were measured using resonant non-Rutherford Backscattering Spectrometry. Tribological properties were determined using a pin-on-disk test with a 6-mm diameter ruby pin with a velocity of 0.94 m/min. Testing was done at 10% humidity with a load of 377 g. Wear rate and coefficient of friction were determined from these tests. While reduction in the wear rate for nitrogen implanted materials was observed, greater reduction (more than an order of magnitude) was observed for boron implanted materials. In addition, reduction in the coefficient of friction for high-dose boron implanted materials was observed. Nano-indentation revealed a hardened layer near the surface of the material. Results from grazing incidence x-ray diffraction suggest the formation of Fe 2 N and Fe 3 N in the nitrogen implanted materials and Fe 3 B in the boron implanted materials. Results from transmission electron microscopy will be presented

  15. Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

    International Nuclear Information System (INIS)

    Whelan, S.; La Magna, A.; Privitera, V.; Mannino, G.; Italia, M.; Bongiorno, C.; Fortunato, G.; Mariucci, L.

    2003-01-01

    Excimer laser annealing (ELA) of ultra-low-energy (ULE) B-ion implanted Si has been performed. High-resolution transmission electron microscopy has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been investigated as a function of the laser energy density (melted depth), the implant dose, and the number of laser pulses (melt time). The activated and retained dose has been evaluated with spreading resistance profiling and secondary ion mass spectrometry. A significant amount of the implanted dopant was lost from the sample during ELA. However, the dopant that was retained in crystal material was fully activated following rapid resolidification. At an atomic concentration below the thermodynamic limit, the activation efficiency (dose activated/dose implanted into Si material) was a constant for a fixed melt depth, irrespective of the dose implanted and hence the total activated dose was raised as the implant dose was increased. The electrical activation was increased for high laser energy density annealing when the dopant was redistributed over a deeper range

  16. Sliding behavior of boron ion-implanted 304 stainless steel

    International Nuclear Information System (INIS)

    Shrivastava, S.; Jain, A.; Singh, C.

    1995-01-01

    The authors have studied the influence of boron ion implantation on the friction and wear behavior of 304 stainless steel. The authors find an increase in microhardness following implantation. The authors also observed a reduction in wear and coefficient of friction. They have measured the microhardness, inside the wear tracks and have found a large increase in the values in the unimplanted specimens and only a small increase in the implanted specimens. These observations have thrown light on the change in the wear mechanism between the two cases. The authors have also used Scanning Electron Microscopy and Energy Dispersive Analysis of X-rays, to characterize the differences in the mode of wear. The change in wear behavior is brought about by the ability of boron to prevent the surface from transforming into a hard brittle layer during wear

  17. Defects in boron ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.

    1975-05-01

    The crystal defects formed after post-implantation annealing of B-ion-implanted Si irradiated at 100 keV to a moderate dose (2 x 10 14 /cm 2 ) were studied by transmission electron microscopy. Contrast analysis and annealing kinetics show at least two different kinds of linear rod-like defects along broken bracket 110 broken bracket directions. One kind either shrinks steadily remaining on broken bracket 110 broken bracket at high temperatures (greater than 850 0 C), or transforms into a perfect dislocation loop which rotates toward broken bracket 112 broken bracket perpendicular to its Burgers vector. The other kind shrinks steadily at moderate temperatures (approximately 800 0 C). The activation energy for shrinkage of the latter (3.5 +- 0.1 eV) is the same as that for B diffusion in Si, suggesting that this linear defect is a boron precipitate. There also exist a large number of perfect dislocation loops with Burgers vector a/2broken bracket 110 broken bracket. The depth distribution of all these defects was determined by stereomicroscopy. The B precipitates lying parallel to the foil surfaces are shown to be at a depth of about 3500 +- 600 A. The loops are also at the same depth, but with a broader spread, +-1100 A. Si samples containing B and samples containing no B (P-doped) were irradiated in the 650-kV electron microscope. Irradiation at 620 0 C resulted in the growth of very long linear defects in the B-doped samples but not in the others, suggesting that at 620 0 C Si interstitials produced by the electron beam replace substitutional B some of which precipitates in the form of long rods along broken bracket 110 broken bracket. (DLC)

  18. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  19. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  20. A new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.; Park, C.; Yang, S.; Morris, S.; Do, V.; Tasch, F.

    1992-01-01

    We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This paper reports that this new model is based on the dual Pearson semi-empirical implant depth profile model and the UT-MARLOWE Monte Carlo boron ion implantation model. This new model can predict with very high computational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness

  1. Improved tribological behavior of boron implanted Ti-6Al-4V

    International Nuclear Information System (INIS)

    Baker, N.P.; Walter, K.C.; Nastasi, M.

    1998-03-01

    Boron implanted of Ti6Al4V has been conducted at combinations of 32 and 40 keV to supplement that done previously at 75 keV. Shallower boron depth profiles with higher B-concentrations in the Ti64 surface have been obtained by tailoring the combinations of ion energy and dose. This work used three different ion energy and dose combinations of 4 x 10 17 B-at/cm 2 at 40 keV plus 2 x 10 17 B-at/cm 2 at 32 keV, 4 x 10 17 B-at/cm 2 at 40 keV, and 4 x 10 17 B-at/cm 2 at 32 keV plus 2 x 10 17 B-at/cm 2 at 40 keV. Comparisons are made between Ti6Al4V with a shallow implanted boron depth profile, Ti6Al4V with a deeper boron depth profile and nitrogen implanted using a plasma source ion implantation process. It has been previously shown that while boron implanted Ti64 has a ∼ 30% higher surface hardness than nitrogen implanted Ti64, the N-implantation reduced the wear coefficient of Ti64 by 25--120x, while B-implantation reduced the wear coefficient by 6.5x or less. The results show that no significant improvement is made in the wear resistance of boron implanted Ti6Al4V by increasing the concentration of boron at the surface from approximately 10% to 43%. Transmission electron microscopy (TEM) and selected area diffraction (SAD) indicated the formation of crystalline TiB in the implanted surface layer. Shallower depth profiles result in reductions of the Ti6Al4V wear coefficient by 6.5x or less which is the same result obtained earlier with the deeper boron depth profile. Surface hardness of Ti6Al4V with shallower boron depth profiles was improved approximately 10% compared to the results previously acquired with deeper boron depth profiles

  2. Modeling of interstitial diffusion of ion-implanted boron

    International Nuclear Information System (INIS)

    Velichko, O.I.; Knyazheva, N.V.

    2009-01-01

    A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are created continuously during annealing due to generation, dissolution, or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. A simulation of boron redistribution during thermal annealing for 60 s at a temperature of 850 C has been carried out. The calculated profile agrees well with the experimental data. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nm. It was also obtained that approximately 1.94% of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with crystal lattice defects. (authors)

  3. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation

    International Nuclear Information System (INIS)

    Mrotchek, I.

    2007-01-01

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and ∼5.10 17 ions/cm 2 fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co 3 W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load

  4. Implanted He retention and release from boronized layers

    International Nuclear Information System (INIS)

    Doyle, B.L.; Walsh, D.S.; Wampler, W.R.

    1992-01-01

    3 He has been implanted at an energy of 3 keV into amorphous hydrogenated boron-carbon (a-BC) films deposited by rf sputtering onto single crystal Si substrates. The initial composition of the films was analyzed by nuclear-enhanced backscattering spectrometry to be B 2 C with ∝20% H and ∝10% O. The areal density of the implanted and retained 3 He was measured in situ by a new ion beam analysis technique using the 3 He( 3 He, pp) three-body nuclear reaction. The He trapping or pumping efficiency at room temperature is only 3.4% for low fluence implants and the a-BC layer saturates with He at a fluence of 5x10 17 He/cm 2 . At this saturation fluence, only 3.1x10 15 He/cm 2 is retained in the film. Isochronal annealing of the implanted samples reveals a distributed release of implanted He at ∝200deg C, which corresponds to a trap activation energy of 1.65±0.25 eV. 3 He was trapped less efficiently at 250deg C than at room temperature and exhibited a saturated retention of 8.6x10 14 He/cm 2 . These results indicate that wall pumping should play only a minor role in the interpretation of the Textor He-pump experiment carried out earlier this year. The results also show that the unintentional deposition of a-Bc, onto He pumping plates could adversely affect the operation of such devices, and should therefore be avoided. (orig.)

  5. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  6. Comparison of boron and neon damage effects in boron ion-implanted resistors

    International Nuclear Information System (INIS)

    MacIver, B.A.

    1975-01-01

    Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

  7. Monte Carlo simulation of boron-ion implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.

    1991-01-01

    A physically based Monte Carlo boron implantation model developed comprehends previously neglected but important implant parameters such as native oxide layers, wafer temperature, beam divergence, tilt angle, rotation (twist) angle, and dose, in addition to energy. This model uses as its foundation the MARLOWE Monte Carlo simulation code developed at Oak Ridge National Laboratory for the analysis of radiation effects in materials. This code was carefully adapted for the simulation of ion implantation, and a number of significant improvements have been made, including the addition of atomic pair specific interatomic potentials, the implementation of a newly developed local electron concentration dependent electronic stopping model, and the implementation of a newly developed cumulative damage model. This improved version of the code, known as UT-MARLOWE, allows boron implantation profiles to be accurately predicted as a function of energy, tilt angle, rotation angle, and dose. This code has also been used in the development and implementation of an accurate and efficient two-dimensional boron implantation model

  8. Flash lamp annealing of ion implanted boron profiles

    International Nuclear Information System (INIS)

    Wieser, E.; Syhre, H.; Ruedenauer, F.G.; Steiger, W.

    1983-05-01

    The diffusion behaviour of ion implanted boron profiles (5x10E15 B/cm 2 , 50keV) in silicon at 800 0 C and 900 0 C has been compared for samples with and without foregoing flahs - lamp annealing of the radiation damage. The observed differences are discussed with respect to mechanisms of diffusion inhibition in the high concentration region. (Author) [de

  9. Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide

    OpenAIRE

    Machaka, Ronald; Mwakikunga, Bonex W.; Manikandan, Elayaperumal; Derry, Trevor E.; Sigalas, Iakovos; Herrmann, Mathias

    2012-01-01

    Results on a systematic study on the effects of ion implantation on the near-surface mechanical and structural properties of boron suboxide (B 6O) prepared by uniaxial hot pressing are reviewed. 150keV fluorine ions at fluences of up to 5.0 × 10 16ions/cm 2 were implanted into the ultrahard ceramic material at room temperature and characterized using Raman spectroscopy, atomic force microscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Evidence of ion-beam-as...

  10. High energy ion implantation

    International Nuclear Information System (INIS)

    Ziegler, J.F.

    1985-01-01

    High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

  11. X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon

    Science.gov (United States)

    Luebbert, D.; Arthur, J.; Sztucki, M.; Metzger, T. H.; Griffin, P. B.; Patel, J. R.

    2002-10-01

    Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range of 925 to 1025 degC. From the growth kinetics we obtain an activation energy for interstitial migration in silicon: EI=1.98plus-or-minus0.06 eV. Fault intensity and size versus time results indicate that faults do not shrink and disappear, but rather are annihilated by a dislocation reaction mechanism.

  12. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  13. Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

    Energy Technology Data Exchange (ETDEWEB)

    Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  14. Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma

    International Nuclear Information System (INIS)

    Lukichev, V.; Rudenko, K.; Orlikovsky, A.; Pustovit, A.; Vyatkin, A.

    2008-01-01

    We have investigated plasma immersion ion implantation (PI 3 ) of boron with energies of 500 eV (doses up to 2x10 15 cm -2 ) from BF 3 plasma with He pre-amorphizing implantation (PAI)(energy 3 keV, dose 5x10 16 cm -2 ). Implanted samples were subjected to RTA (T = 900 to 1050 deg. C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. For short RTA times the profile tail (below 5x10 19 cm -3 ) moves toward the surface and then, as in the usual diffusion, toward the bulk at longer annealing times.

  15. The fraction of substitutional boron in silicon during ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

    1998-01-01

    We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

  16. Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

    Science.gov (United States)

    Lu, Xin-Ming

    Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation

  17. Molecular dynamics simulation of boron implanted into diamond (0 0 1) 2 x 1 reconstruction surface

    International Nuclear Information System (INIS)

    Li Rongbin; Dai Yongbin; Hu Xiaojun; Sheng Heshen; He Xianchang

    2003-01-01

    Molecular dynamic simulations, utilizing the Tersoff many-body potential, are used to investigate the microscopic processes of a single boron atom with energy of 500 eV implanted into the diamond (0 0 1) 2 x 1 reconstruction surface. The lifetime of thermal spike created by B bombardment is about 0.18 ps by calculating the variation of the mean coordination numbers with time. The formation of the split-interstitial composed of projectile and lattice atom (B-C) is observed. The total potential energy of the system decreases about 0.56 eV with a stable B split-interstitial in diamond. The lattice relaxations in the diamond (0 0 1) 2 x 1 reconstruction surface or near surface of simulated have been discussed. The outermost layer atoms tend to move inward, and the other atoms move outward. The interplanar distance between the outermost layer and the second layer has been shortened by 15% compared with its starting interplanar distance. Stress distribution in the calculated diamond configuration is inhomogeneous. After boron implanted into diamond with the energy of 500 eV, there is an excess of compressively stressed atoms in the lattice, which induces the total stress being compressive

  18. Channeling effect for low energy ion implantation in Si

    International Nuclear Information System (INIS)

    Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

    1985-01-01

    Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

  19. Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology

    International Nuclear Information System (INIS)

    Xu Yue; Yan Feng; Li Zhiguo; Yang Fan; Wang Yonggang; Chang Jianguang

    2010-01-01

    The influence of shallow trench isolation (STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology. (semiconductor devices)

  20. Molecular dynamic simulation on boron cluster implantation for shallow junction formation

    International Nuclear Information System (INIS)

    Yuan Li; Yu Min; Li Wei; Ji Huihui; Ren Liming; Zhan Kai; Huang Ru; Zhang Xing; Wang Yangyuan; Zhang Jinyu; Oka, Hideki

    2006-01-01

    Boron cluster ion implantation is a potential technology for shallow junction formation in integrated circuits manufacture. A molecular dynamic method for cluster implantation simulation, aiming at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters are described by the model, and the H atoms in clusters are included. A potential function taking the form of combining the ZBL and the SW potentials is presented here to model interaction among the atoms in the boron cluster. The impact of these models on cluster implantation simulation is investigated. There are notable impact on dopant distribution and amount of implantation defects with consideration of these models. The simulation on the distributions of B and H are verified by SIMS data

  1. The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

    2005-01-01

    We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of ∼4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA

  2. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation; Oberflaechenmodifikation des Hartmetalls Wolframkarbid-Kobalt durch Bor-Ionenimplantation

    Energy Technology Data Exchange (ETDEWEB)

    Mrotchek, I.

    2007-09-07

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and {approx}5.10{sup 17} ions/cm{sup 2} fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co{sub 3}W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load.

  3. Study of the boron levels in serum after implantation of different ratios nano-hexagonal boron nitride–hydroxy apatite in rat femurs

    Energy Technology Data Exchange (ETDEWEB)

    Atila, Alptug, E-mail: alptugatila@yahoo.com [Department of Analytical Chemistry, Faculty of Pharmacy, Ataturk University, Erzurum 25240 (Turkey); Halici, Zekai; Cadirci, Elif [Department of Pharmacology, Faculty of Medicine, Ataturk University, Erzurum 25240 (Turkey); Karakus, Emre [Department of Pharmacology and Toxicology, School of Veterinary Medicine, Ataturk University, Erzurum 25240 (Turkey); Palabiyik, Saziye Sezin [Department of Pharmaceutical Toxicology, Faculty of Pharmacy, Ataturk University, Erzurum 25240 (Turkey); Ay, Nuran [Department of Material Science and Engineering, Faculty of Engineering, Anadolu University, Eskisehir 26555 (Turkey); Bakan, Feray [Sabancı University Nanotechnology Research and Application Center (SUNUM), Istanbul 34956 (Turkey); Yilmaz, Sahin [Department of Genetics and Bioengineering, Faculty of Engineering and Architecture, Yeditepe University, Istanbul 34755 (Turkey)

    2016-01-01

    ABSTRACT: Boron and its derivatives are effective in bone recovery and osteointegration. However, increasing the boron levels in body liquids may cause toxicity. The aim of our study is to investigate serum boron levels using ICP-MS after implantation of different ratios of nano-hBN–HA composites in rat femurs. All rats were (n = 126) divided into five experimental groups (n = 24) and one healthy group (6 rats); healthy (Group1), femoral defect + %100HA (Group2), femoral defect + %2.5hBN + %97.5HA (Group3), femoral defect + %5hBN + %95HA (Group4), femoral defect + %10hBN + %90 HA (Group5), femoral defect + %100hBN (Group6). The femoral defect was created in the distal femur (3 mm drill-bit). Each implant group was divided into four different groups (n = 24) also 6 rats sacrificed for each groups in one week intervals during four weeks. In our results; at 1, 2, 3, and 4 weeks after implantation near bone tissue, serum levels of boron were evaluated using ICP-MS. We demonstrated that neither short-term nor long-term implantation of hBN–HA composite resulted in statistically increased serum boron levels in experimental groups compared to healthy group. In conclusion, this study investigated the implant material produced form hBN–HA for the first time. Our data suggest that hBN is a new promising target for biomaterial and implant bioengineers. - Highlights: • Nano-hBN–HA composites are new targets for biomaterial and implant bioengineers. • Serum boron levels were researched after implantation of nano-hBN–HA composites. • Implantation of hBN–HA composite did not result in increased serum boron levels. • The use of boron in composite form with HA did not change the stability of the implant.

  4. Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

    CERN Document Server

    Kaschieva, S; Skorupa, W

    2003-01-01

    The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O sup + or B sup +) implanted samples are gamma-irradiated with sup 6 sup 0 Co. Gamma irradiation creates electron levels at the SiSiO sub 2 interface of the samples in a different way depending on the type of the previously implanted atoms (O sup + or B sup +). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. (orig.)

  5. Ion implantation artifacts observed in depth profiling boron in silicon by secondary ion mass spectrometry

    International Nuclear Information System (INIS)

    Chi, P.; Simons, D.S.

    1987-01-01

    A comparison study of depth profiling by secondary ion mass spectrometry (SIMS) and neutron depth profiling (NDP) was recently conducted. The specimens were portions of 5 cm diameter single crystal silicon slices in which B-10 had been implanted at various fluences and energies. NDP measurements were made on a 13 mm diameter area at the center of the wafers. SIMS measurements were taken from a 60 μm diameter area approximately 16 mm from the center of the wafer. One observation that emerged from this work was an apparent discrepancy between the profiles of B-10 measured by DNP and SIMS. The peaks of the SIMS profiles were typically deeper than those of NDP by as much as 30 nm, which is 10% of the projected range for a 70 keV implant. Moreover, the profiles could not be made to coincide by either a constant shift or a proportional change of one depth scale with respect to the other. The lateral inhomogeneity of boron that these experiments have demonstrated arises from the variable contribution of ion channeling during implantation

  6. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  7. Amorphization of tantalum by boron and phosphorus ion implantation

    International Nuclear Information System (INIS)

    Thome, L.; Benyagoub, A.; Bernas, H.; Pivin, J.C.; Cahn, R.W.

    1984-01-01

    The nature and depth dependence of the disorder produced by B and P implantation in Ta single crystals were studied in situ via channeling experiments and after implantation via grazing incidence electron diffraction experiments. The correlation of experimental results with implanted impurity profiles determined by SIMS shows that amorphous Ta-B and Ta-P alloys are produced for, respectively, 19% and 8% B and P concentrations in the implanted layer [fr

  8. Boron

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  9. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

    Science.gov (United States)

    Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  10. Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Wang, D J; Tamai, K; Li, L A; Ao, J-P; Ohno, Y; Shinkai, S; Miyashita, T; Motoyama, S-I

    2014-01-01

    We report the investigation of boron ion implantation as a device field isolation process for GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure. In the mesa isolation region of a bar-type MOSFET, a parasitic MOS-channel existed and widened the designed channel width, which would result in an overestimated mobility compared with a ring-type MOSFET. After boron ions implantation in the isolation region, the overestimation of field-effect mobility of bar-type MOSFETs was eliminated. The sub-threshold characteristics and on-state drain current of the bar-type MOSFETs coincide with the ring-type devices. Long-channel ring-type MOSFETs, with and without ion implantation, were fabricated on the recess region to evaluate the sub-threshold characteristics. The MOSFETs with boron ions implanted into the recess region showed a low drain current up to the gate bias of 10V. The result indicated that boron ion implantation prevented the formation of parasitic MOS-channel in the isolation region and achieved field isolation. The current–voltage characteristics of MOSFETs with the normal recess condition demonstrated no degradation of device performance after boron ions implanted into the isolation region. Boron ion implantation by further optimization can be a field isolation method for GaN MOSFETs. (paper)

  11. Boron lattice location in room temperature ion implanted Si crystal

    International Nuclear Information System (INIS)

    Piro, A.M.; Romano, L.; Mirabella, S.; Grimaldi, M.G.

    2005-01-01

    The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 x 10 2 B/cm 3 were grown by Molecular Beam Epitaxy. Point defect engineering techniques, with light energetic ion implants, have been applied to generate an I Si uniform injection in the electrically active layer. The displacement of B atoms out of substitutional lattice sites was induced by 650 keV proton irradiations at room temperature (R.T.) and the resultant defect configuration was investigated by ion channelling and Nuclear Reaction Analysis (NRA) techniques. Angular scans were measured both through and axes along the (1 0 0) plane using the 11 B(p,α) 8 Be nuclear reaction at 650 keV proton energy. Monte Carlo simulated angular scans were calculated considering a variety of theoretical defect configurations, supported by literature, and compared with experimental data. Our experimental scans can be fitted by a linear combination of small (0.3 A) and large B displacements (1.25 A) along the direction, compatible with the B-dumbbell oriented along as proposed by ab initio calculations

  12. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    International Nuclear Information System (INIS)

    Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

    2015-01-01

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

  13. Suppression of boron diffusion using carbon co-implantation in DRAM

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Suk Hun [School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon-si 440-746 (Korea, Republic of); Park, Se Geun; Kim, Shin Deuk; Jung, Hyuck-Chai; Kim, Il Gweon [Memory Division, Samsung Electronics Co. Ltd., Hwasung-si 445-330 (Korea, Republic of); Kang, Dong-Ho [School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon-si 440-746 (Korea, Republic of); Kim, Dae Jung; Lee, Kyu Pil; Choi, Joo Sun [Memory Division, Samsung Electronics Co. Ltd., Hwasung-si 445-330 (Korea, Republic of); Baek, Jung-Woo [Industrial Engineering Department, Chosun University, Gwangju-si 501-759 (Korea, Republic of); Choi, Moonsuk [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea (Korea, Republic of); Park, Yongkook [School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon-si 440-746 (Korea, Republic of); Choi, Changhwan, E-mail: cchoi@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon-si 440-746 (Korea, Republic of)

    2016-10-15

    Highlights: • The impact of Ge + C co-implantation on dopant diffusion was investigated. • DIBL and V{sub TH} variation was improved by Ge + C co-implantation. • The V{sub TH} mismatch and the write characteristics were improved in the DRAM device. - Abstract: In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V{sub TH}) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the V{sub TH} mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

  14. Study of the boron levels in serum after implantation of different ratios nano-hexagonal boron nitride-hydroxy apatite in rat femurs.

    Science.gov (United States)

    Atila, Alptug; Halici, Zekai; Cadirci, Elif; Karakus, Emre; Palabiyik, Saziye Sezin; Ay, Nuran; Bakan, Feray; Yilmaz, Sahin

    2016-01-01

    Boron and its derivatives are effective in bone recovery and osteointegration. However, increasing the boron levels in body liquids may cause toxicity. The aim of our study is to investigate serum boron levels using ICP-MS after implantation of different ratios of nano-hBN-HA composites in rat femurs. All rats were (n=126) divided into five experimental groups (n=24) and one healthy group (6 rats); healthy (Group1), femoral defect + %100 HA (Group2), femoral defect + %2.5 hBN + %97.5 HA (Group3), femoral defect + %5 hBN + %95 HA (Group4), femoral defect + %10 hBN + %90 HA (Group5), femoral defect + %100 hBN (Group6). The femoral defect was created in the distal femur (3mm drill-bit). Each implant group was divided into four different groups (n=24) also 6 rats sacrificed for each groups in one week intervals during four weeks. In our results; at 1, 2, 3, and 4 weeks after implantation near bone tissue, serum levels of boron were evaluated using ICP-MS. We demonstrated that neither short-term nor long-term implantation of hBN-HA composite resulted in statistically increased serum boron levels in experimental groups compared to healthy group. In conclusion, this study investigated the implant material produced form hBN-HA for the first time. Our data suggest that hBN is a new promising target for biomaterial and implant bioengineers. Copyright © 2015 Elsevier B.V. All rights reserved.

  15. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar

    2007-01-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm 2 , initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10 6 x[OH] 0.11 x[CD] 0.62 x[IBC] -0.57 x[DSE] -0.04 x[T] -2.98 x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  16. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  17. The effect of boron implantation on the corrosion behaviour, microhardness and contact resistance of copper and silver surfaces

    International Nuclear Information System (INIS)

    Henriksen, O.; Johnson, E.; Johansen, A.; Sarholt-Kristensen, L.

    1986-01-01

    In order to investigate the influence of boron implantation on the corrosion resistance of electrical contacts, a number of pure copper, pure silver and copper edge connector samples have been implanted with boron (40 keV) to fluences of 5.10 20 m -2 and 2.10 21 m -2 . Atmospheric corrosion tests of the implanted species were conducted using the following exposures: H 2 S (12.5 ppm, 4 days), SO 2 (25 ppm, 21 days), saltfog (5% NaCl, 1 day), moist air (93% RH, 56 days), and hot/dry air (70 C, 56 days). The boron implantations lead to a significant reduction in the sulphidation rate of copper and silver. The corrosive film formed during exposure in H 2 S and SO 2 atmospheres is confined to pitted regions on the implanted areas, while a thick and relatively uniform film formation is observed on the unimplanted samples. The corrosion resistance of copper and silver in saltfog atmosphere is somewhat improved by boron implantation, whilst the results from exposures to moist air or hot/dry air are inconclusive. The improved corrosion behaviour is accompanied by an increase in the contact resistance and in the microhardness of the implanted samples. (orig.)

  18. Effect of radiation induced defects and incompatibility elastic stresses on the diffusion of ion implantated boron in silicon at the pulse annealing

    International Nuclear Information System (INIS)

    Stel'makh, V.F.; Suprun-Belevich, Yu.R.; Chelyadinskij, A.R.

    1987-01-01

    For determination of radiation defects effect on diffusion of the implanted boron in silicon at the pulse annealing, silicon crystals, implanted with boron, preliminary irradiated by silicon ions of different flows for checked defects implantation, were investigated. Silicon crystals additionally implanted by Ge + ions were investigated to research the effect of the incompatibility elastic stresses, emerging in implanted structures due to lattice periods noncoincidence in matrix and alloyed layers, on implanted boron diffusion. It is shown, that abnormally high values of boron diffusion coefficients in silicon at the pulse annealing are explained by silicon interstitial atom participation in redistribution of diffusing boron atoms by two diffusion channels - interstitial and vacation - and by incompatibility elastic stresses effect on diffusion

  19. X-ray analysis of temperature induced defect structures in boron implanted silicon

    Science.gov (United States)

    Sztucki, M.; Metzger, T. H.; Kegel, I.; Tilke, A.; Rouvière, J. L.; Lübbert, D.; Arthur, J.; Patel, J. R.

    2002-10-01

    We demonstrate the application of surface sensitive diffuse x-ray scattering under the condition of grazing incidence and exit angles to investigate growth and dissolution of near-surface defects after boron implantation in silicon(001) and annealing. Silicon wafers were implanted with a boron dose of 6×1015 ions/cm2 at 32 keV and went through different annealing treatments. From the diffuse intensity close to the (220) surface Bragg peak we reveal the nature and kinetic behavior of the implantation induced defects. Analyzing the q dependence of the diffuse scattering, we are able to distinguish between point defect clusters and extrinsic stacking faults on {111} planes. Characteristic for stacking faults are diffuse x-ray intensity streaks along directions, which allow for the determination of their growth and dissolution kinetics. For the annealing conditions of our crystals, we conclude that the kinetics of growth can be described by an Ostwald ripening model in which smaller faults shrink at the expense of the larger stacking faults. The growth is found to be limited by the self-diffusion of silicon interstitials. After longer rapid thermal annealing the stacking faults disappear almost completely without shrinking, most likely by transformation into perfect loops via a dislocation reaction. This model is confirmed by complementary cross-sectional transmission electron microscopy.

  20. Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

    NARCIS (Netherlands)

    Vos, M.; Boerma, D.O.; Smulders, P.J.M.; Oosterhoff, S.

    1986-01-01

    Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from

  1. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  2. Boron diffusion in Ge+ premorphized and BF2 implanted Si(001)

    International Nuclear Information System (INIS)

    Zou, L.F.; Acosta-Ortiz, S.E.; Zou, L.X.; Regalado, L.E.; Sun, D.Z.; Wang, Z.G.

    1998-01-01

    The annealing behavior of Si implanted with Ge and then BF 2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 Centigrade for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 Centigrade for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 Centigrade, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 Centigrade for 60 minutes display two Si Ge peaks, which may be related to the B concentration profiles. (Author)

  3. Boron-implantation-induced crystalline-to-amorphous transition in nickel: An experimental assessment of the generalized Lindemann melting criterion

    International Nuclear Information System (INIS)

    Liu, P.C.; Okamoto, P.R.; Zaluzec, N.J.; Meshii, M.

    1999-01-01

    The generalized Lindemann melting hypothesis has recently been used to develop a unified thermodynamic criterion for melting applicable to both heat-induced melting and disorder-induced crystalline-to-amorphous (c-a) transformation. The hypothesis stipulates that the sum left-angle μ 2 right-angle Total of the static and dynamic root-mean-square (rms) atomic displacements is a constant fraction of the nearest-neighbor distance along the melting curve of a solid. To test this hypothesis, energy-filtered selected area electron-diffraction intensity measurements were used to determine the generalized Lindemann parameter δ=√ (left-angle μ 2 right-angle Total ) /d nn , in which d nn represents the nearest-neighbor distance, as a function of boron concentration during implantation of 50-keV ampersand hthinsp;B + into polycrystalline Ni at 77 K. The onset of amorphization was found to occur close to 10 at.ampersand hthinsp;% boron, which is in good agreement with the value predicted by T o curve calculated using the generalized Lindemann hypothesis. Moreover, the critical value of the generalized Lindemann parameter for amorphization, δ Critical =0.115±0.01, is within experimental error, identical to that for Ni just below its thermodynamic melting temperature of T=1728 ampersand hthinsp;K, hence providing a direct confirmation for the generalized Lindemann melting hypothesis. copyright 1999 The American Physical Society

  4. A Monte Carlo simulation study of boron profiles as-implanted into LPCVD NiDoS polycrystalline thin films

    Science.gov (United States)

    Boukezzata, M.; Ait-Kaki, A.; Temple-Boyer, P.; Scheid, E.

    2003-03-01

    This work presents a Monte Carlo simulation study of boron profiles obtained from as-implanted ions into thin films nitrogen doped silicon (NiDoS) thin films. These films are performed by LPCVD technique from Si2H6 and NH3 gas sources, four values deliberately chosen, of the ratio NH3/Si2H6 to obtain samples, differently in situ nitrogen-doped. Taking into account the effect of the codoping case, and the structure specificity of these films, an accurate Monte Carlo model based on binary collisions in a multi-atomic target was performed. Nitrogen atoms present in the target is shown to affect the boron profiles and confirms clearly a reduction penetration effect which becomes more significant at high nitrogen concentrations. Whereas, the fine-grained polysilicon structure, and thus the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon by assuming an effective role played by GB's in the scattering calculation process of the incident ions. This role is represented by the change in direction of the incident ion after interaction with GB without corresponding loss in its energy. The results obtained show an enhancement of the stopping parameter when nitrogen concentration increases, while the GB interaction remains very important. This behavior is due to a great number of GB's interactions with boron atoms which gave low deflection angles. So that, the average positions described by the sequences of trajectories took place farther than what expected with channeling effect in crystal silicon materials.

  5. Amorphous clusters in Co implanted ZnO induced by boron pre-implantation

    Energy Technology Data Exchange (ETDEWEB)

    Potzger, K.; Shalimov, A.; Zhou, S.; Schmidt, H.; Mucklich, A.; Helm, M.; Fassbender, J.; Liberati, M.; Arenholz, E.

    2009-02-09

    We demonstrate the formation of superparamagnetic/ferromagnetic regions within ZnO(0001) single crystals sequently implanted with B and Co. While the pre-implantation with B plays a minor role for the electrical transport properties, its presence leads to the formation of amorphous phases. Moreover, B acts strongly reducing on the implanted Co. Thus, the origin of the ferromagnetic ordering in local clusters with large Co concentration is itinerant d-electrons as in the case of metallic Co. The metallic amorphous phases are non-detectable by common X-ray diffraction.

  6. A Hip Implant Energy Harvester

    Science.gov (United States)

    Pancharoen, K.; Zhu, D.; Beeby, S. P.

    2014-11-01

    This paper presents a kinetic energy harvester designed to be embedded in a hip implant which aims to operate at a low frequency associated with body motion of patients. The prototype is designed based on the constrained volume available in a hip prosthesis and the challenge is to harvest energy from low frequency movements (< 1 Hz) which is an average frequency during free walking of a patient. The concept of magnetic-force-driven energy harvesting is applied to this prototype considering the hip movements during routine activities of patients. The magnetic field within the harvester was simulated using COMSOL. The simulated resonant frequency was around 30 Hz and the voltage induced in a coil was predicted to be 47.8 mV. A prototype of the energy harvester was fabricated and tested. A maximum open circuit voltage of 39.43 mV was obtained and the resonant frequency of 28 Hz was observed. Moreover, the power output of 0.96 μW was achieved with an optimum resistive load of 250Ω.

  7. A Hip Implant Energy Harvester

    International Nuclear Information System (INIS)

    Pancharoen, K; Zhu, D; Beeby, S P

    2014-01-01

    This paper presents a kinetic energy harvester designed to be embedded in a hip implant which aims to operate at a low frequency associated with body motion of patients. The prototype is designed based on the constrained volume available in a hip prosthesis and the challenge is to harvest energy from low frequency movements (< 1 Hz) which is an average frequency during free walking of a patient. The concept of magnetic-force-driven energy harvesting is applied to this prototype considering the hip movements during routine activities of patients. The magnetic field within the harvester was simulated using COMSOL. The simulated resonant frequency was around 30 Hz and the voltage induced in a coil was predicted to be 47.8 mV. A prototype of the energy harvester was fabricated and tested. A maximum open circuit voltage of 39.43 mV was obtained and the resonant frequency of 28 Hz was observed. Moreover, the power output of 0.96 μW was achieved with an optimum resistive load of 250Ω

  8. Neutralization study of boron and some metallic impurities (gold, titanium, manganese, chromium) by hydrogen implantation in monocrystal silicon

    International Nuclear Information System (INIS)

    Zundel, T.

    1987-02-01

    Boron doped silicon implanted with hydrogen at low energy in the temperature range 80-140 0 C shows a large decrease of the electrically active dopant concentration up to a depth which increases with the temperature, the implantation duration and the starting material resistivity. This effect is assigned to the formation of an electrically inactive BH complex. The hydrogen incorporation process shows a weakly temperature dependent enhanced diffusion step followed by a normal diffusion phase which may be described by a thermally activated diffusion coefficient. Heating at 80 0 C produces a complete dissociation of the BH complexes in the space charge region of reverse biased Schottky diodes. Consequently the released hydrogen drifts under the electric field and the neutralization becomes more pronounced in the bulk. Hydrogen neutralizes the gold, chromium, manganese related deep levels but has no effect on titanium related defect levels. Thermal annealing at 495 0 C of hydrogenated chromium or manganese doped samples produces four majority carriers levels which disappear at 700 0 C [fr

  9. High energy P implants in silicon

    International Nuclear Information System (INIS)

    Raineri, V.; Cacciato, A.; Benyaich, F.; Priolo, F.; Rimini, E.; Galvagno, G.; Capizzi, S.

    1992-01-01

    Phosphorus ions in the energy range 0.25-1 MeV and in the dose range 2x10 13 -1x10 15 P/cm 2 were implanted into (100) Si single crystal at different tilt angles. In particular channeling and random conditions were investigated. For comparison some implants were performed on samples with a 2 μm thick surface amorphous layer. Chemical concentration P profiles were obtained by secondary ion mass spectrometry. Carrier concentration and mobility profile measurements were carried out by sheet resistance and Hall measurements on implanted van der Pauw patterns. Carrier concentration profiles were also obtained by spreading resistance (SR) measurements. The damage in the as-implanted samples was determined by backscattering and channeling spectrometry (RBS) as a function of the dose and implantation energy. Comparison of random implants in crystal with implants in amorphous layers shows that in the first case it is impossible to completely avoid the channeling tail. In the implants performed under channeling conditions at low doses the P profiles are flat over more than 2 μm thick layers. Furthermore, by increasing the implanted dose, the shape of the profiles dramatically changes due to the dechanneling caused by the crystal disorder. The data are discussed and compared with Monte Carlo simulations using the MARLOWE code. A simple description of the electronic energy loss provides an excellent agreement between the calculated and experimental profiles. (orig.)

  10. Boron enhances strength and alters mineral composition of bone in rabbits fed a high energy diet.

    Science.gov (United States)

    Hakki, Sema S; Dundar, Niyazi; Kayis, Seyit Ali; Hakki, Erdogan E; Hamurcu, Mehmet; Kerimoglu, Ulku; Baspinar, Nuri; Basoglu, Abdullah; Nielsen, Forrest H

    2013-04-01

    An experiment was performed to determine whether boron had a beneficial effect on bone strength and composition in rabbits with apparent adiposity induced by a high energy diet. Sixty female New Zealand rabbits, aged 8 months, were randomly divided into five groups with the following treatments for seven months: control 1, fed alfalfa hay only (5.91 MJ/kg); control 2, high energy diet (11.76 MJ and 3.88 mg boron/kg); B10, high energy diet+10 mg/kg body weight boron gavage/96 h; B30, high energy diet+30 mg/kg body weight boron gavage/96 h; B50, high energy diet+50mg/kg body weight boron gavage/96 h. Bone boron concentrations were lowest in rabbits fed the high energy diet without boron supplementation, which suggested an inferior boron status. Femur maximum breaking force was highest in the B50 rabbits. Tibia compression strength was highest in B30 and B50 rabbits. All boron treatments significantly increased calcium and magnesium concentrations, and the B30 and B50 treatments increased the phosphorus concentration in tibia of rabbits fed the high energy diet. The B30 treatment significantly increased calcium, phosphorus and magnesium concentrations in femur of rabbits fed the high energy diet. Principal component analysis of the tibia minerals showed that the three boron treatments formed a separate cluster from controls. Discriminant analysis suggested that the concentrations of the minerals in femur could predict boron treatment. The findings indicate boron has beneficial effects on bone strength and mineral composition in rabbits fed a high energy diet. Copyright © 2012 Elsevier GmbH. All rights reserved.

  11. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  12. Activation behavior of boron implanted poly-Si on glass substrate

    International Nuclear Information System (INIS)

    Furuta, M.; Shimamura, K.; Tsubokawa, H.; Tokushige, K.; Furuta, H.; Hirao, T.

    2010-01-01

    The activation behavior of boron (B) implanted poly-Si films on glass substrates has been investigated. The effect of B dose and annealing temperature on crystal defects and electrical properties of the films were evaluated by Raman spectroscopy and Hall measurement. It was found that the maximum activation ratio of the film with B dose of 1 x 10 15 cm -2 was obtained when Raman peak associated with disordered amorphous silicon disappeared. However, reverse anneal was observed in the film when the annealing temperature further increased. The results from secondary ion mass spectrometry and Hall measurement revealed that B segregation at the top and bottom interface and deactivation of B substitutional occurred simultaneously in the high-dose specimens when the annealing temperature increased from 600 to 750 o C.

  13. High-energy ion implantation of materials

    International Nuclear Information System (INIS)

    Williams, J.M.

    1991-11-01

    High-energy ion implantation is an extremely flexible type of surface treatment technique, in that it offers the possibility of treating almost any type of target material or product with ions of almost any chemical species, or combinations of chemical species. In addition, ion implantations can be combined with variations in temperature during or after ion implantation. As a result, the possibility of approaching a wide variety of surface-related materials science problems exists with ion implantation. This paper will outline factors pertinent to application of high-energy ion implantation to surface engineering problems. This factors include fundamental advantages and limitations, economic considerations, present and future equipment, and aspects of materials science

  14. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  15. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  16. Defect generation/passivation by low energy hydrogen implant for silicon solar cells

    International Nuclear Information System (INIS)

    Sopori, B.L.; Zhou, T.Q.; Rozgonyi, G.A.

    1990-01-01

    Low energy ion implant is shown to produce defects in silicon. These defects include surface damage, hydrogen agglomeration, formation of platelets with (111) habit plane and decoration of dislocations. Hydrogen also produces an inversion type of surface on boron doped silicon. These effects indicate that a preferred approach for passivation is to incorporate hydrogen from the back side of the cell. A backside H + implant technique is described. The results show that degree of passivation differs for various devices. A comparison of the defect structures of hydrogenated devices indicates that the structure and the distribution of defects in the bulk of the material plays a significant role in determining the degree of passivation

  17. Mechanical and structural properties of fluorine-ion-implanted boron suboxide

    CSIR Research Space (South Africa)

    Machaka, R

    2011-09-01

    Full Text Available such as diffusion, solubility, deposi- tion, and alloy formation by providing high kinetic energy through ion impact and utilizing ballistic effects during ion- solid interaction [1?4]. Moreover, ion implantation allows the precise control of the ion energy, ion... annealing, and diffusion processes taking place during ion implantation. Advances in Materials Science and Engineering 3 Acc. V Det WD 5 ?m 512 kV 5000x CL 11.9 B6O Spot Magn (a) 0 1 2 3 4 5 6 7 8 0 0.3 0.6 0.9 1.3 1.6 KC n t Energy (keV) B...

  18. Nano-structure and tribological properties of B+ and Ti+ co-implanted silicon nitride

    International Nuclear Information System (INIS)

    Nakamura, Naoki; Noda, Katsutoshi; Yamauchi, Yukihiko

    2005-01-01

    Silicon nitride ceramics have been co-implanted with boron and titanium ions at a fluence of 2 x 10 17 ions/cm 2 and an energy of 200 keV. TEM results indicated that the boron and titanium-implanted layers were amorphized separately and titanium nitride nano-crystallites were formed in the titanium-implanted layer. XPS results indicated that the implantation profile varied a little depending on the ion implantation sequence of boron and titanium ions, with the boron implantation peak shifting to a shallower position when implanted after Ti + -implantation. Wear tests of these ion-implanted materials were carried out using a block-on-ring wear tester under non-lubricated conditions against commercially available silicon nitride materials. The specific wear rate was reduced by ion implantation and showed that the specific wear rate of Ti + -implanted sample was the lowest, followed by B + , Ti + co-implanted and B + -implanted samples

  19. Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation

    International Nuclear Information System (INIS)

    Roth, E.G.; Holland, O.W.; Duggan, J.L.

    1999-01-01

    Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectrometry was used to profile the dopant distributions. copyright 1999 American Institute of Physics

  20. Effects of energy variations of ions influencing a target on implantation

    International Nuclear Information System (INIS)

    Astakhov, V.P.; Rubtsov, V.A.; Aranovich, R.M.; Pavlov, P.V.

    1981-01-01

    In cases of phosphorus and boron ion implantation into silicon the dependence of electrophysical properties of ion-doped layers and target material near the layer boundaries on energy variation conditions of influencing ions is observed. A physical model explaining the dependence is proposed. It is found that for the target, being at room temperature, after successive annealing the qualitative characteristics of conditions (i.e. energy increase and decrease) on implantation of phosphorus ions into p-silicon and boron ions into n-silicon, as well as the value of energy stages, define rhosub(l) ion-doped layer resistivity and tausub(mc) nonequilibrium minority carrier lifetime in the base of p-n transitions. The essence of the effects observed is that for equal sets of Esub(i) ion energy values and PHIsub(i) corresponding phases at maximum energy used exceeding 30 keV, successive energy increase during implantation, when E 1 2 1 mode), leads to smaller rhosub(e) values and greater tausub(mc) than in case of successive energy decrease, when E 1 >E 2 >...E(E 2 mode) for any fixed annealing temperature. In cases when the maximum energy does not exceed 30 KeV, the E 1 and E 2 modes lead to analogous rhosub(e) and tausub(mc) values. The E 2 mode leads to enrichment of the ion-implanted layer with associations and complexes on the basis of interstitial atoms in comparison with the E 1 mode. The associations and complexes on thermal treatment are reformed into the higher-temperature interstitial complexes increasing rhosub(e) and decreasing tausub(mc). Supposition about the effect of these complexes and processes of structural transformations on annealing, hampering-improvement of structural properties of the ion-implanted layer and a crystal region bordered on it [ru

  1. Hardness and wear properties of boron-implanted poly(ether-ether-ketone) and poly-ether-imide

    International Nuclear Information System (INIS)

    Lee Youngchul; Lee, E.H.; Mansur, L.K.

    1992-01-01

    The effects of boron beam irradiation on the hardness, friction, and wear of polymer surfaces were investigated. Typical high-performance thermoplastics, poly(ether-ether-ketone) (PEEK) and a poly-ether-imide (Ultem) were studied after 200 keV boron ion beam treatment at ambient temperature to doses of 2.3x10 14 , 6.8x10 14 , and 2.2x10 15 ions cm -2 . The hardnesses of pristine and boron-implanted materials were characterized by a conventional Knoop method and a load-depth sensing nanoindentation technique. Both measurements showed a significant increase in hardness with increasing dose. The increase in hardness was also found to depend on the penetration depth of the diamond indenter. Wear and friction properties were characterized by a reciprocating sliding friction tester with an SAE 52100 high-carbon, chrome steel ball at 0.5 and 1 N normal loads. Wear and frictional properties varied in a complex fashion with polymer type and dose, but not much with normal load. A substantial reduction in friction coefficient was observed for PEEK at the highest dose but no reduction was observed for Ultem. The wear damage was substantially reduced at the highest dose for both Ultem and PEEK. For the system studied, the highest dose, 2.2x10 15 ions cm -2 , appears to be optimum in improving wear resistance for both PEEK and Ultem. (orig.)

  2. High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

    International Nuclear Information System (INIS)

    Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Ryssel, H.; Gyulai, J.

    1992-01-01

    A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams in the energy range from 100 keV to more than 6 MeV with currents up to 100 μA. A large variety of ion species can be implanted into silicon wafers with diameters up to 200 mm (with cassette-to-cassette loading up to 150 mm). The performance characteristics of the system are described with special emphasis on the end stations. In a first series of experiments, the range distributions of boron, phosphorus and arsenic in silicon have been measured for energies from 0.2 MeV to 10 MeV in order to get a data set for future applications. The profiles are compared to simulated data. First experimental results on lateral distribution of the dopant species are presented. (orig.)

  3. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  4. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

    International Nuclear Information System (INIS)

    Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

    2016-01-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue

  5. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hébert, Clément, E-mail: clement.hebert@icn2.cat [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Cottance, Myline [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Degardin, Julie [INSERM, U968, Institut de la Vision, Paris (France); Scorsone, Emmanuel [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Rousseau, Lionel; Lissorgues, Gaelle [Université Paris-Est, ESYCOM-ESIEE Paris, Noisy le Grand (France); Bergonzo, Philippe [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette 91191 (France); Picaud, Serge [INSERM, U968, Institut de la Vision, Paris (France)

    2016-12-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4 months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis. - Highlights: • Microfabrication of porous diamond electrode on flexible retinal implant • Electrochemical characterization of microelectrode for neural interfacing • In vivo impedance spectroscopy of retinal tissue.

  6. Noncrucial role of the defects in the splitting for hydrogen implanted silicon with high boron concentration

    International Nuclear Information System (INIS)

    Popov, V.P.; Stas, V.F.; Antonova, I.V.

    1999-01-01

    The present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects

  7. Corrosion behaviour of layers obtained by nitrogen implantation into boron films deposited onto iron substrates

    International Nuclear Information System (INIS)

    Marchetti, F.; Fedrizzi, L.; Giacomozzi, F.; Guzman, L.; Borgese, A.

    1985-01-01

    The electrochemical behaviour and corrosion resistance of boron films deposited onto Armco iron after bombardment with 100 keV N + ions were determined in various test solutions. The changes in the electrochemical parameters give evidence of lower anodic dissolution rates for the treated samples. Scanning electron microscopy and Auger analysis of the corroded surfaces confirm the presence of protective layers. (Auth.)

  8. Quantification of the boron speciation in alkali borosilicate glasses by electron energy loss spectroscopy

    DEFF Research Database (Denmark)

    Cheng, D.S.; Yang, G.; Zhao, Y.Q.

    2015-01-01

    developed a method based on electron energy loss spectroscopy (EELS) data acquisition and analyses, which enables determination of the boron speciation in a series of ternary alkali borosilicate glasses with constant molar ratios. A script for the fast acquisition of EELS has been designed, from which...

  9. A study of the boron profiles caused by BF2 implantation in crystalline silicon

    International Nuclear Information System (INIS)

    Jung, Won-Chae

    2005-01-01

    For integrated CMOS circuits, the one-, two-, and three-dimensional impurity distributions are very important for analyzing the devices. The one-dimensional boron profiles were measured by using secondary ion mass spectroscopy (SIMS), and simulation data were obtained by using the TSUPREM4 and the UT-Marlowe programs. The simulated data of UT-Marlowe in 1D agreed very well with the SIMS data. From the SIMS and the simulated 1D data, the four moments were calculated, these 1D data were used in the TSUPREM4 simulator to calculate of 2D profiles. For the TSUPREM4 simulations, several different models were used for the characterization of the 1D and the 2D boron profiles. A Taurus simulation tool was used to obtain the 3D boron profiles for the case of arbitrary tilting and rotation. The measured two-dimensional cross-sectional transmission electron microscope (XTEM) data obtained by using the chemical etching method matched very well with the results of the Gauss model. The vertical depths from the Gauss model and from the XTEM data were 125.8 nm and 125 nm, respectively. The channel lengths from the Gauss model and from the XTEM data were 205 nm and 233 nm, respectively. From the XTEM data and the Gauss model, the deviations of the vertical and the lateral doping distributions were 0.6 % and 12 %, respectively. The detection limit of boron measured by using the chemical-etching method was shown to be a concentration of about 1.0 X 10 16 cm -3 for a PMOS device.

  10. Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

    International Nuclear Information System (INIS)

    Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

    2005-01-01

    Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

  11. Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide

    Directory of Open Access Journals (Sweden)

    Ronald Machaka

    2012-01-01

    degradation of near-surface mechanical properties with increasing fluorine fluence. Implications of these observations in the creation of amorphous near-surface layers by high-dose ion implantation are discussed in this paper.

  12. The gettering of boron by an ion-implanted antimony layer in silicon

    International Nuclear Information System (INIS)

    Fair, R.B.; Pappas, P.N.

    1975-01-01

    Secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer. It is shown that the gettering of B is significant, and may be caused by electric-field-enhanced diffusion of the B as well as by solubility enhancement of the electrically-active Sb. These results emphasize the first-order importance of cooperative effects between donors and acceptors in diffusion profile calculations. (author)

  13. Beam neutron energy optimization for boron neutron capture therapy using monte Carlo method

    International Nuclear Information System (INIS)

    Pazirandeh, A.; Shekarian, E.

    2006-01-01

    In last two decades the optimal neutron energy for the treatment of deep seated tumors in boron neutron capture therapy in view of neutron physics and chemical compounds of boron carrier has been under thorough study. Although neutron absorption cross section of boron is high (3836b), the treatment of deep seated tumors such as glioblastoma multiform requires beam of neutrons of higher energy that can penetrate deeply into the brain and thermalized in the proximity of the tumor. Dosage from recoil proton associated with fast neutrons however poses some constraints on maximum neutron energy that can be used in the treatment. For this reason neutrons in the epithermal energy range of 10eV-10keV are generally to be the most appropriate. The simulation carried out by Monte Carlo methods using MCBNCT and MCNP4C codes along with the cross section library in 290 groups extracted from ENDF/B6 main library. The ptimal neutron energy for deep seated tumors depends on the sue and depth of tumor. Our estimated optimized energy for the tumor of 5cm wide and 1-2cm thick stands at 5cm depth is in the range of 3-5keV

  14. Theoretical Study of Energy Levels and Transition Probabilities of Boron Atom

    Science.gov (United States)

    Tian Yi, Zhang; Neng Wu, Zheng

    2009-08-01

    Full Text PDF Though the electrons configuration for boron atom is simple and boron atom has long been of interest for many researchers, the theoretical studies for properties of BI are not systematic, there are only few results reported on energy levels of high excited states of boron, and transition measurements are generally restricted to transitions involving ground states and low excited states without considering fine structure effects, provided only multiplet results, values for transitions between high excited states are seldom performed. In this article, by using the scheme of the weakest bound electron potential model theory calculations for energy levels of five series are performed and with the same method we give the transition probabilities between excited states with considering fine structure effects. The comprehensive set of calculations attempted in this paper could be of some value to workers in the field because of the lack of published calculations for the BI systems. The perturbations coming from foreign perturbers are taken into account in studying the energy levels. Good agreement between our results and the accepted values taken from NIST has been obtained. We also reported some values of energy levels and transition probabilities not existing on the NIST data bases.

  15. Hartree-Fock energies of the doubly excited states of the boron isoelectronic sequence

    International Nuclear Information System (INIS)

    El-Sherbini, T.M.; Mansour, H.M.; Farrag, A.A.; Rahman, A.A.

    1985-08-01

    Hartree-Fock energies of the 1s 2 2s 2p ns( 4 P), 1s 2 2s 2p np ( 4 P, 4 D) and 1s 2 2s 2p nd ( 4 P, 4 D); n=3-6 states in the boron isoelectronic sequence are reported. The results show a fairly good agreement with the experimental data of Bromander for O IV. (author)

  16. Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

    Science.gov (United States)

    Fonash, S. J.

    1985-01-01

    New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

  17. Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag-In-Se thin films

    International Nuclear Information System (INIS)

    Colakoglu, T; Parlak, M; Kulakci, M; Turan, R

    2008-01-01

    In this study, e-beam evaporated Ag-In-Se (AIS) thin films were doped by the implantation of boron (B) ions at 75 keV with a dose of 1 x 10 15 ions cm -2 and a subsequent annealing process was applied to the doped AIS films at different temperatures under nitrogen atmosphere. The effects of implantation and annealing on the electrical and photoelectrical properties of AIS thin films were investigated through temperature dependent conductivity, spectral photoresponse and photoconductivity measurements under different illumination intensities. The electrical conductivity measurements showed that the room temperature conductivity values were determined as 2.4 x 10 -7 (Ω cm) -1 , 1.7 x 10 -6 (Ω cm) -1 and 8.9 x 10 -5 (Ω cm) -1 for B-doped films (B0), B-doped and annealed films at 200 deg. C (B2) and at 300 deg. C (B3), respectively. It was observed that the electrical conductivity improved as the annealing temperature increased up to 400 deg. C at which the AIS thin films showed degenerate semiconductor behaviour. The spectral distribution of the photoresponse curves indicated three local maxima located at 1.63, 1.79 and 2.01 eV for B0 type films, 1.65, 1.87 and 2.07 eV for B2 type films and 1.73, 2.02 and 2.32 eV for B3 type films at room temperature. These three different energy values were ascribed to the splitting of the valence band due to spin-orbit interaction and crystalline lattice field effects. The first energy values of each set were determined to be energy band gaps of the AIS thin films. The photoconductivity measurements as a function of temperature and illumination intensity were performed on the B-doped AIS thin films in order to determine the nature of recombination processes in the films. The photoconductivity values were found to be thermally quenched for all types of thin films and the variation of photocurrent as a function of illumination intensity showed that the dependence of photocurrent on the intensity was supralinear. The two

  18. The thermodynamic approach to boron chemical vapour deposition based on a computer minimization of the total Gibbs free energy

    International Nuclear Information System (INIS)

    Naslain, R.; Thebault, J.; Hagenmuller, P.; Bernard, C.

    1979-01-01

    A thermodynamic approach based on the minimization of the total Gibbs free energy of the system is used to study the chemical vapour deposition (CVD) of boron from BCl 3 -H 2 or BBr 3 -H 2 mixtures on various types of substrates (at 1000 < T< 1900 K and 1 atm). In this approach it is assumed that states close to equilibrium are reached in the boron CVD apparatus. (Auth.)

  19. Molecular-dynamics simulation of defect formation energy in boron nitride nanotubes

    International Nuclear Information System (INIS)

    Moon, W.H.; Hwang, H.J.

    2004-01-01

    We investigate the defect formation energy of boron nitride nanotubes (BNNTs) using molecular dynamics simulation. Although the defect with tetragon-octagon pairs (TOP) is favored in the flat BNNTs cap, BN clusters, and the growth of BNNTs, the formation energy of the TOP defect is significantly higher than that of the pentagon-heptagon pairs (PHP) defect in BNNTs. The PHP defect reduces the effect of the structural distortion caused by the TOP defect, in spite of homoelemental bonds. The instability of the TOP defect generates the structural transformation into BNNTs with no defect at about 1500 K. This mechanism shows that the TOP defect is less favored in case of BNNTs

  20. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  1. Angle-resolved electron energy loss spectroscopy in hexagonal boron nitride

    Science.gov (United States)

    Fossard, Frédéric; Sponza, Lorenzo; Schué, Léonard; Attaccalite, Claudio; Ducastelle, François; Barjon, Julien; Loiseau, Annick

    2017-09-01

    Electron energy loss spectra were measured on hexagonal boron nitride single crystals employing an electron energy loss spectroscopic setup composed of an electron microscope equipped with a monochromator and an in-column filter. This setup provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes provide complementary pieces of information, offering a global view of excitations in reciprocal space. As an example of the capabilities of the method we show how easily the core loss spectra at the K edges of boron and nitrogen can be measured and imaged. Low losses associated with interband and/or plasmon excitations are also measured. This energy range allows us to illustrate that our method provides results whose quality is comparable to that obtained from nonresonant x-ray inelastic scattering but with advantageous specificities such as an enhanced sensitivity at low q and a much greater simplicity and versatility that make it well adapted to the study of two-dimensional materials and related heterostructures. Finally, by comparing theoretical calculations to our measures, we are able to relate the range of applicability of ab initio calculations to the anisotropy of the sample and assess the level of approximation required for a proper simulation of our acquisition method.

  2. High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

    Science.gov (United States)

    Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

    2015-01-01

    Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

  3. Low energy helium implantation of aluminum

    International Nuclear Information System (INIS)

    Wilson, K.L.; Thomas, G.J.

    1976-02-01

    A series of 20 keV He + implantations was conducted on well-annealed MARZ grade aluminum at fluxes of 6 x 10 14 and 6 x 10 13 He + /cm 2 sec. Three distinct, temperature dependent He release mechanisms were found by He re-emission measurements during implantation, and by subsequent SEM and TEM investigations. At 0.08 of the melting temperature (T/sub m/) gas re-emission rose smoothly after a critical dose of 3 x 10 17 He + /cm 2 , with extensive blistering. The intermediate temperature range (approximately 0.3 T/sub m/) was characterized by repeated flake exfoliation and bursts of He after a dose of 3 x 10 17 He + /cm 2 . Rapid He evolution, with hole formation was found above 0.7 T/sub m/. No significant differences in either gas re-emission or surface deformation were found between the two fluxes employed

  4. Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

    Directory of Open Access Journals (Sweden)

    Feng Sun

    2018-03-01

    Full Text Available Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET require further hole Schottky barrier height (SBH regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B and aluminum (Al in combination with microwave annealing (MWA. By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget.

  5. Vacancy supersaturations produced by high-energy ion implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.

    1998-01-01

    A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range (1/2 R p ) of MeV implants. The vacancy clustered region produced by a 2 MeV Si + implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions

  6. Nanomechanical and in situ TEM characterization of boron carbide thin films on helium implanted substrates: Delamination, real-time cracking and substrate buckling

    Energy Technology Data Exchange (ETDEWEB)

    Framil Carpeño, David, E-mail: david.framil-carpeno@auckland.ac.nz [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand); Ohmura, Takahito; Zhang, Ling [Strength Design Group, Structural Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Leveneur, Jérôme [National Isotope Centre, GNS Science, 30 Gracefield Road, Gracefield, Lower Hutt 5010 (New Zealand); Dickinson, Michelle [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand); Seal, Christopher [International Centre for Advanced Materials, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Kennedy, John [National Isotope Centre, GNS Science, 30 Gracefield Road, Gracefield, Lower Hutt 5010 (New Zealand); Hyland, Margaret [Department of Chemical and Materials Engineering, The University of Auckland, 20 Symonds Street, Auckland 1010 (New Zealand)

    2015-07-15

    Boron carbide coatings deposited on helium-implanted and unimplanted Inconel 600 were characterized using a combination of nanoindentation and transmission electron microscopy. Real-time coating, cracking and formation of slip bands were recorded using in situ TEM-nanoindentation, allowing site specific events to be correlated with specific features in their load–displacement curves. Cross-sections through the residual indent impression showed a correlation between pop-outs in the load–displacement curves and coating delamination, which was confirmed with cyclic indentation experiments. Inconel exhibits (-11-1) and (1-1-1) twin variants in its deformed region beneath the indenter, organized in bands with a ladder-like arrangement. The nanomechanical properties of the metal–ceramic coating combinations exhibit a marked substrate effect as a consequence of helium implantation.

  7. Nanomechanical and in situ TEM characterization of boron carbide thin films on helium implanted substrates: Delamination, real-time cracking and substrate buckling

    International Nuclear Information System (INIS)

    Framil Carpeño, David; Ohmura, Takahito; Zhang, Ling; Leveneur, Jérôme; Dickinson, Michelle; Seal, Christopher; Kennedy, John; Hyland, Margaret

    2015-01-01

    Boron carbide coatings deposited on helium-implanted and unimplanted Inconel 600 were characterized using a combination of nanoindentation and transmission electron microscopy. Real-time coating, cracking and formation of slip bands were recorded using in situ TEM-nanoindentation, allowing site specific events to be correlated with specific features in their load–displacement curves. Cross-sections through the residual indent impression showed a correlation between pop-outs in the load–displacement curves and coating delamination, which was confirmed with cyclic indentation experiments. Inconel exhibits (-11-1) and (1-1-1) twin variants in its deformed region beneath the indenter, organized in bands with a ladder-like arrangement. The nanomechanical properties of the metal–ceramic coating combinations exhibit a marked substrate effect as a consequence of helium implantation

  8. Formation of cBN nanocrystals by He+ implantations of hBN

    OpenAIRE

    Machaka, Ronald; Erasmus, Rudolph M; Derry, Trevor E

    2010-01-01

    The structural modifications of polycrystalline hexagonal boron nitride implanted with He+ ion beams at energies between 200 keV and 1.2 MeV to fluences of 1.0 \\times 1017 ions \\cdot cm-2 were investigated using micro-Raman spectroscopy. The measured Raman spectra show evidence of implantation-induced structural transformations from the hexagonal phase to nanocrystalline cubic boron nitride, rhombohedral boron nitride and amorphous boron nitride phases. The first-order Longitudinal-Optical cB...

  9. Development of a CMOS process using high energy ion implantation

    International Nuclear Information System (INIS)

    Stolmeijer, A.

    1986-01-01

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  10. Monitoring Ion Implantation Energy Using Non-contact Characterization Methods

    Science.gov (United States)

    Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

    2011-01-01

    State-of-the-art ultra-shallow junctions are produced using extremely low ion implant energies, down to the range of 1-3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are suitable for this purpose.

  11. Effects of H-implantation energy on the optical stability of implanted usher films under photo-irradiation

    International Nuclear Information System (INIS)

    Awazu, K.; Yasui, H.; Kasamori, M.; Ichikawa, T.; Funada, Y.; Iwaki, M.

    1999-01-01

    A study has been made on the improvement of the optical stability of urushi films under optical irradiation using ion implantation. Ion implantation of hydrogen ions in urushi films was performed with a dose of 10 15 ions/cm 2 at ion energies ranging from 0.2 to 150 keV at room temperature. The photo-irradiation onto the urushi films was carried out at irradiation energies ranging from 40 to 400 MJ/m 2 . H-implantation onto urushi films is useful for improving the optical stability under photo-irradiation when the implantation energy is larger than 60 keV

  12. Implantation profile of low-energy positrons in solids

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1990-01-01

    A simple form for an implantation profile of monoenergetic, low-energy (1--10 keV) positrons in solids is presented. Materials studied include aluminum, copper, molybdenum, palladium, and gold with atomic number ranging from 13 to 79. A simple set of parameters can describe the currently used Makhov profile in slow positron studies of solids. We provide curves and tables for the parameters that can be used to describe the implantation profiles of positrons in any material with atomic number in between 13 and 79

  13. Strategy for designing stable and powerful nitrogen-rich high-energy materials by introducing boron atoms.

    Science.gov (United States)

    Wu, Wen-Jie; Chi, Wei-Jie; Li, Quan-Song; Li, Ze-Sheng

    2017-06-01

    One of the most important aims in the development of high-energy materials is to improve their stability and thus ensure that they are safe to manufacture and transport. In this work, we theoretically investigated open-chain N 4 B 2 isomers using density functional theory in order to find the best way of stabilizing nitrogen-rich molecules. The results show that the boron atoms in these isomers are aligned linearly with their neighboring atoms, which facilitates close packing in the crystals of these materials. Upon comparing the energies of nine N 4 B 2 isomers, we found that the structure with alternating N and B atoms had the lowest energy. Structures with more than one nitrogen atom between two boron atoms had higher energies. The energy of N 4 B 2 increases by about 50 kcal/mol each time it is rearranged to include an extra nitrogen atom between the two boron atoms. More importantly, our results also show that boron atoms stabilize nitrogen-rich molecules more efficiently than carbon atoms do. Also, the combustion of any isomer of N 4 B 2 releases more heat than the corresponding isomer of N 4 C 2 does under well-oxygenated conditions. Our study suggests that the three most stable N 4 B 2 isomers (BN13, BN24, and BN34) are good candidates for high-energy molecules, and it outlines a new strategy for designing stable boron-containing high-energy materials. Graphical abstract The structural characteristics, thermodynamic stabilities, and exothermic properties of nitrogen-rich N 4 B 2 isomers were investigated by means of density functional theory.

  14. Energy harvesting by implantable abiotically catalyzed glucose fuel cells

    Science.gov (United States)

    Kerzenmacher, S.; Ducrée, J.; Zengerle, R.; von Stetten, F.

    Implantable glucose fuel cells are a promising approach to realize an autonomous energy supply for medical implants that solely relies on the electrochemical reaction of oxygen and glucose. Key advantage over conventional batteries is the abundant availability of both reactants in body fluids, rendering the need for regular replacement or external recharging mechanisms obsolete. Implantable glucose fuel cells, based on abiotic catalysts such as noble metals and activated carbon, have already been developed as power supply for cardiac pacemakers in the late-1960s. Whereas, in vitro and preliminary in vivo studies demonstrated their long-term stability, the performance of these fuel cells is limited to the μW-range. Consequently, no further developments have been reported since high-capacity lithium iodine batteries for cardiac pacemakers became available in the mid-1970s. In recent years research has been focused on enzymatically catalyzed glucose fuel cells. They offer higher power densities than their abiotically catalyzed counterparts, but the limited enzyme stability impedes long-term application. In this context, the trend towards increasingly energy-efficient low power MEMS (micro-electro-mechanical systems) implants has revived the interest in abiotic catalysts as a long-term stable alternative. This review covers the state-of-the-art in implantable abiotically catalyzed glucose fuel cells and their development since the 1960s. Different embodiment concepts are presented and the historical achievements of academic and industrial research groups are critically reviewed. Special regard is given to the applicability of the concept as sustainable micro-power generator for implantable devices.

  15. Research on nitrogen implantation energy dependence of the properties of SIMON materials

    International Nuclear Information System (INIS)

    Zhang, E.X.; Sun, J.Y.; Chen, J.; Chen, M.; Zhang, Zh.X.; Li, N.; Zhang, G.Q.; Wang, X.

    2006-01-01

    With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined

  16. Fusion energy using avalanche increased boron reactions for block-ignition by ultrahigh power picosecond laser pulses

    Czech Academy of Sciences Publication Activity Database

    Hora, H.; Korn, Georg; Giuffrida, Lorenzo; Margarone, Daniele; Picciotto, A.; Krása, Josef; Jungwirth, Karel; Ullschmied, Jiří; Lalousis, P.; Eliezer, S.; Miley, G. H.; Moustaizis, S.; Mourou, G.

    2015-01-01

    Roč. 33, č. 4 (2015), s. 607-619 ISSN 0263-0346 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : fusion energy without radiation problem * boron fusion by lasers * non-linear force-driven block ignition Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UFP-V) Impact factor: 1.649, year: 2015

  17. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation

    Energy Technology Data Exchange (ETDEWEB)

    Roosta, Sara [Molecular Simulation Research Laboratory, Department of Chemistry, Iran University of Science & Technology, Tehran (Iran, Islamic Republic of); Hashemianzadeh, Seyed Majid, E-mail: hashemianzadeh@iust.ac.ir [Molecular Simulation Research Laboratory, Department of Chemistry, Iran University of Science & Technology, Tehran (Iran, Islamic Republic of); Ketabi, Sepideh, E-mail: sepidehketabi@yahoo.com [Department of Chemistry, East Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were − 4.128 kcal mol{sup −1} and − 2457.124 kcal mol{sup −1} respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was − 281.937 kcal mol{sup −1} which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (− 374.082 and − 245.766 kcal mol{sup −1}) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. - Highlights: • Solubility of cisplatin@ boron-nitride nanotube is larger than cisplatin@ carbon nanotube. • Boron- nitride nanotube complexes have larger electrostatic contribution in solvation free energy. • Complexation free energies confirm encapsulation of drug into the nanotubes in aqueous solution. • Boron- nitride nanotubes are appropriate drug delivery systems compared with carbon nanotubes.

  18. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation

    International Nuclear Information System (INIS)

    Roosta, Sara; Hashemianzadeh, Seyed Majid; Ketabi, Sepideh

    2016-01-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were − 4.128 kcal mol"−"1 and − 2457.124 kcal mol"−"1 respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was − 281.937 kcal mol"−"1 which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (− 374.082 and − 245.766 kcal mol"−"1) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. - Highlights: • Solubility of cisplatin@ boron-nitride nanotube is larger than cisplatin@ carbon nanotube. • Boron- nitride nanotube complexes have larger electrostatic contribution in solvation free energy. • Complexation free energies confirm encapsulation of drug into the nanotubes in aqueous solution. • Boron- nitride nanotubes are appropriate drug delivery systems compared with carbon nanotubes.

  19. Characterization of junctions produced by medium-energy ion implantation in silicon

    International Nuclear Information System (INIS)

    Monfret, A.

    1970-01-01

    Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [fr

  20. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  1. Spectroscopic and piezospectroscopic studies of the energy states of boron in silicon

    International Nuclear Information System (INIS)

    Lewis, R.A.; Fisher, P.; McLean, N.A.

    1994-01-01

    The p 3/2 optical absorption spectrum of boron impurity in silicon has been re-examined at high resolution. The precise transition energies measured agree with energies previously reported. In addition, energies for several previously unrecognised transitions are given as well as values for the absorption strengths and line widths. The measured transition energies and absorption strengths correlate very well with several recent calculations of binding energies and oscillator strengths, respectively. This excellent agreement between experiment and theory motivates a renumbering of the spectral lines which is not expected to require future modification. High-resolution piezospectroscopy of the p 3/2 series has also been undertaken. Small stresses were used to minimise the effect of interactions and permit accurate determination of the deformation potential constants. The deformation potential constants are found to be in fair agreement with previous experimental values and good agreement with recent theory. Experimental values for several of these are given for the first time, as are isotropic deformation potential constants of several excited states relative to the ground state. 58 refs., 14 figs

  2. Subcutaneous Photovoltaic Infrared Energy Harvesting for Bio-Implantable Devices.

    Science.gov (United States)

    Moon, Eunseong; Blaauw, David; Phillips, Jamie D

    2017-05-01

    Wireless biomedical implantable devices on the mm-scale enable a wide range of applications for human health, safety, and identification, though energy harvesting and power generation are still looming challenges that impede their widespread application. Energy scavenging approaches to power biomedical implants have included thermal [1-3], kinetic [4-6], radio-frequency [7-11] and radiative sources [12-14]. However, the achievement of efficient energy scavenging for biomedical implants at the mm-scale has been elusive. Here we show that photovoltaic cells at the mm-scale can achieve a power conversion efficiency of more than 17 % for silicon and 31 % for GaAs under 1.06 μW/mm 2 infrared irradiation at 850 nm. Finally, these photovoltaic cells demonstrate highly efficient energy harvesting through biological tissue from ambient sunlight, or irradiation from infrared sources such as used in present-day surveillance systems, by utilizing the near infrared (NIR) transparency window between the 650 nm and 950 nm wavelength range [15-17].

  3. An accurate mobility model for the I-V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

    International Nuclear Information System (INIS)

    Chingyuan Wu; Yeongwen Daih

    1985-01-01

    In this paper an analytical mobility model is developed for the I-V characteristics of n-channel enhancement-mode MOSFETs, in which the effects of the two-dimensional electric fields in the surface inversion channel and the parasitic resistances due to contact and interconnection are included. Most importantly, the developed mobility model easily takes the device structure and process into consideration. In order to demonstrate the capabilities of the developed model, the structure- and process-oriented parameters in the present mobility model are calculated explicitly for an n-channel enhancement-mode MOSFET with single-channel boron implantation. Moreover, n-channel MOSFETs with different channel lengths fabricated in a production line by using a set of test keys have been characterized and the measured mobilities have been compared to the model. Excellent agreement has been obtained for all ranges of the fabricated channel lengths, which strongly support the accuracy of the model. (author)

  4. Vectorial photoinduced energy transfer between boron-dipyrromethene (Bodipy) chromophores across a fluorene bridge.

    Science.gov (United States)

    Puntoriero, Fausto; Nastasi, Francesco; Campagna, Sebastiano; Bura, Thomas; Ziessel, Raymond

    2010-08-02

    A series of novel multichromophoric, luminescent compounds has been prepared, and their absorption spectra, luminescence properties (both at 77 K in rigid matrix and at 298 K in fluid solution), and photoinduced intercomponent energy-transfer processes have been studied. The series contains two new multichromophoric systems 1 and 2, each one containing two different boron-dipyrromethene (Bodipy) subunits and one bridging fluorene species, and two fluorene-Bodipy bichromophoric species, 6 and 7. Three monochromophoric compounds, 3, 4, and 5, used as precursors in the synthetic process, were also fully characterized. The absorption spectra of the multichromophoric compounds are roughly the summation of the absorption spectra of their individual components, thus demonstrating the supramolecular nature of the assemblies. Luminescence studies show that quantitative energy transfer occurs in 6 and 7 from the fluorene chromophore to the Bodipy dyes. Luminescence studies, complemented by transient-absorption spectroscopy studies, also indicate that efficient inter-Bodipy energy transfer across the rigid fluorene spacer takes place in 1 and 2, with rate constants, evaluated by several experimental methods, between 2.0 and 7.0 x 10(9) s(-1). Such an inter-Bodipy energy transfer appears to be governed by the Förster mechanism. By taking advantage of the presence of various protonable sites in the substituents of the lower-energy Bodipy subunit of 1 and 2, the effect of protonation on the energy-transfer rates has also been investigated. The results suggest that control of energy-transfer rate and efficiency of inter-Bodipy energy transfer in this type of systems can be achieved by an external, reversible input.

  5. Characterization of junctions produced by medium-energy ion implantation in silicon; Caracterisation de jonctions obtenues par implantation d'ions de moyenne energie dans le silicium

    Energy Technology Data Exchange (ETDEWEB)

    Monfret, A [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1970-07-01

    Characteristics of diodes made by implanting 20 keV boron and phosphorus ions into silicon are reviewed. Special features of theses diodes are presented, and correlation with technology is studied. This paper includes three parts: - in the first part, the theory of range distribution is considered for both amorphous and single-crystal targets, - In the second part, a brief description of the experimental conditions is given. - In the third part, the experimental results are presented. The results lead to a schematic model of the component. They also show the influence of cleaning and annealing treatments from which optimized process of fabrication can be determined. In this study, the influence of a two stage annealing process is shown. For phosphorus and boron implants, the first stage is performed at 150 deg. C while the second stage is 450 deg. C for phosphorus and 550 deg. C for boron implants. The implanted diodes are found to exhibit good electrical characteristics. Comparisons with standard diffused diodes are quite favourable. (author) [French] On examine les caracteristiques de diodes obtenues par implantation d'ions bore et phosphore de 20 keV dans le silicium. On met en evidence le comportement particulier de ces diodes et on presente certaines correlations avec la technologie. L'expose comprend trois parties: - la premiere partie est consacree au calcul du profil de dopage en mode canalise ou non. - Dans la deuxieme partie, on decrit l'appareillage et les conditions experimentales d'implantation. - Dans la troisieme partie, on presente les resultats experimentaux. On propose un modele schematique pour expliquer le comportement des tenues en tension des diodes. L'etude des courants de fuite en fonction de la preparation des echantillons et des traitements thermiques permet de determiner des conditions optimales d'elaboration. Au cours de cette etude on met en evidence l'influence de deux stades de recuit: le premier a 150 deg. C pour les implantations de

  6. Energy transfer by way of an exciplex intermediate in flexible boron dipyrromethene-based allosteric architectures.

    Science.gov (United States)

    Mula, Soumyaditya; Elliott, Kristopher; Harriman, Anthony; Ziessel, Raymond

    2010-10-07

    We have designed and synthesized a series of modular, dual-color dyes comprising a conventional boron dipyrromethene (Bodipy) dye, as a yellow emitter, and a Bodipy dye possessing extended conjugation that functions as a red emitter. A flexible tether of variable length, built from ethylene glycol residues, connects the terminal dyes. A critical design element of this type of dyad relates to a secondary amine linkage interposed between the conventional Bodipy and the tether. Cyclic voltammetry shows both Bodipy dyes to be electroactive and indicates that the secondary amine is quite easily oxidized. The ensuing fluorescence quenching is best explained in terms of the rapid formation of an intermediate charge-transfer state. In fact, exciplex-type emission is observed in weakly polar solvents and over a critical temperature range. In the dual-color dyes, direct excitation of the yellow emitter results in the appearance of red fluorescence, indicating that the exciplex is likely involved in the energy-transfer event, and provides for a virtual Stokes shift of 5000 cm(-1). Replacing the red emitter with a higher energy absorber (namely, pyrene) facilitates the collection of near-UV light and extends the virtual Stokes shift to 8000 cm(-1). Modulation of the efficacy of intramolecular energy transfer is achieved by preorganization of the connector in the presence of certain cations. This latter behavior, which is fully reversible, corresponds to an artificial allosteric effect.

  7. Implanted strontium titanate single crystals for energy storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Stoeber, Max; Cherkouk, Charaf; Walter, Juliane; Strohmeyer, Ralph; Leisegang, Tilmann; Meyer, Dirk Carl [TU Bergakademie, Freiberg (Germany); Schelter, Matthias; Zosel, Jens [Kurt Schwabe Institute, Meinsberg (Germany); Prucnal, Slawomir [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2016-07-01

    A rapid increase of the demand on efficient energy storage solutions requires new approaches beyond the Li-ion technology. In particular, metal-air batteries as well as solid-state fuel cells offer a great potential for high-energy-density storage devices. Since the efficiency of such devices is significantly limited by the activation of both the oxygen reduction reaction (ORR) and the ionic and electronic conductivities, an adequate porosity as well as a controlled doping are required. The ion implantation is a key technology to achieve this goal. In this work, p- and n-doped strontium titanate (SrTiO{sub 3}) single crystals were used as oxidic materials. The oxygen exchange kinetics as well as the structural changes of the SrTiO{sub 3} crystal surface induced by the ion implantation were investigated. On one hand, the depth profile of dopant concentration and dopant valence state were determined using sputtered X-ray photoelectron spectroscopy (XPS). On the other hand, the overall oxygen exchange kinetic of the implanted SrTiO{sub 3} crystal was quantitatively described by means of coulometric titration using Zirox system (ZIROX GmbH, Germany). Furthermore, the surface morphology of the samples was investigated using atomic force microscopy (AFM).

  8. In vitro and in vivo studies in boron neutron capture therapy of malignant melanoma

    International Nuclear Information System (INIS)

    Allen, B.J.

    1982-01-01

    A multidisciplinary research project in boron neutron capture therapy of malignant melanoma is under consideration by the Australian Atomic Energy Commission. This paper reviews the biochemistry of melanoma and the properties of some melanoma-affined radiopharmaceuticals and their boron analogues. Human cell lines are being used for in vitro tests of uptake and incorporation of some of these compounds, and selected lines will then be implanted in nude mice for in vivo distribution studies. The fidelity of human melanoma xenografts in nude mice has been well studied, and results are reviewed in this paper. Boron concentration will be measured directly by plasma arc emission spectroscopy or liquid scintillation counting with 14 C-labelled boron analogues. Track-etch techniques will be used for the microscopic determination of boron in tumor sections. Neutron irradiation and radiobiology experiments are outlined

  9. Stopping characteristics of boron and indium ions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A. [National Research Nuclear University MEPhI (Russian Federation)

    2016-12-15

    The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

  10. Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams

    Science.gov (United States)

    Poppinga, D.; Halbur, J.; Lemmer, S.; Delfs, B.; Harder, D.; Looe, H. K.; Poppe, B.

    2017-09-01

    The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm-3) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

  11. Wireless energy transfer platform for medical sensors and implantable devices.

    Science.gov (United States)

    Zhang, Fei; Hackworth, Steven A; Liu, Xiaoyu; Chen, Haiyan; Sclabassi, Robert J; Sun, Mingui

    2009-01-01

    Witricity is a newly developed technique for wireless energy transfer. This paper presents a frequency adjustable witricity system to power medical sensors and implantable devices. New witricity resonators are designed for both energy transmission and reception. A prototype platform is described, including an RF power source, two resonators with new structures, and inductively coupled input and output stages. In vitro experiments, both in open air and using a human head phantom consisting of simulated tissues, are employed to verify the feasibility of this platform. An animal model is utilized to evaluate in vivo energy transfer within the body of a laboratory pig. Our experiments indicate that witricity is an effective new tool for providing a variety of medical sensors and devices with power.

  12. Energy harvesting for human wearable and implantable bio-sensors.

    Science.gov (United States)

    Mitcheson, Paul D

    2010-01-01

    There are clear trade-offs between functionality, battery lifetime and battery volume for wearable and implantable wireless-biosensors which energy harvesting devices may be able to overcome. Reliable energy harvesting has now become a reality for machine condition monitoring and is finding applications in chemical process plants, refineries and water treatment works. However, practical miniature devices that can harvest sufficient energy from the human body to power a wireless bio-sensor are still in their infancy. This paper reviews the options for human energy harvesting in order to determine power availability for harvester-powered body sensor networks. The main competing technologies for energy harvesting from the human body are inertial kinetic energy harvesting devices and thermoelectric devices. These devices are advantageous to some other types as they can be hermetically sealed. In this paper the fundamental limit to the power output of these devices is compared as a function of generator volume when attached to a human whilst walking and running. It is shown that the kinetic energy devices have the highest fundamental power limits in both cases. However, when a comparison is made between the devices using device effectivenesses figures from previously demonstrated prototypes presented in the literature, the thermal device is competitive with the kinetic energy harvesting device when the subject is running and achieves the highest power density when the subject is walking.

  13. Average bond energies between boron and elements of the fourth, fifth, sixth, and seventh groups of the periodic table

    Science.gov (United States)

    Altshuller, Aubrey P

    1955-01-01

    The average bond energies D(gm)(B-Z) for boron-containing molecules have been calculated by the Pauling geometric-mean equation. These calculated bond energies are compared with the average bond energies D(exp)(B-Z) obtained from experimental data. The higher values of D(exp)(B-Z) in comparison with D(gm)(B-Z) when Z is an element in the fifth, sixth, or seventh periodic group may be attributed to resonance stabilization or double-bond character.

  14. Fatigue and wear of metalloid-ion-implanted metals

    International Nuclear Information System (INIS)

    Hohmuth, K.; Richter, E.; Rauschenbach, B.; Blochwitz, C.

    1985-01-01

    The effect of metalloid ion implantation on the fatigue behaviour and wear of nickel and two steels has been investigated. These metals were implanted with boron, carbon and nitrogen ions at energies from 30 to 60 keV and with doses from 1 X 10 16 to 1 X 10 18 ions cm -2 at room temperature. The mechanical behaviour of fatigued nickel was studied in push-pull tests at room temperature. Wear measurements were made using a pin-and-disc technique. The surface structure, dislocation arrangement and modification of the implantation profile resulting from mechanical tests on metals which had been implanted with metalloid ions were examined using high voltage electron microscopy, transmission high energy electron diffraction, scanning electron microscopy and Auger electron spectroscopy. It is reported that nitrogen and boron ion implantation improves the fatigue lifetime, changes the number and density of the slip bands and modifies the dislocation arrangements in nickel. The cyclic deformation leads to recrystallization of the boron-ion-induced amorphous structure of nickel and to diffusion of the boron and nitrogen in the direction of the surface. The wear behaviour of steels was improved by implantation of mass-separated ions and by implantation of ions without mass separation. (Auth.)

  15. Tracking of boron-labelled monoclonal antibodies by energy loss spectroscopy in the electron microscope: a preliminary report

    International Nuclear Information System (INIS)

    Moore, D.E.; Dawes, A.L.; Chandler, A.K.; Bradstock, K.F.

    1990-01-01

    A technique is being developed, based on electron energy loss spectroscopy in the transmission electron microscope, whereby the binding of monoclonal antibodies to their specific receptors and any subsequent movement or endocytosis can be studied in cell culture. The method requires that antibodies be labelled with a low atomic number element, such as boron. Two procedures have been established enabling up to 1200 boron atoms to be attached per antibody molecule without affecting the immunoreactivity. In the first method, dodecaborane cages are attached to polyornithine bridging molecules which in turn are covalently bound to the antibody using a photosensitive reagent. The second technique makes use of the extremely high biotin-avidin affinity by attaching biotin to the antibody and dodecaborane cages to avidin before mixing the two components. 13 refs., 2 figs

  16. Effects of high energy nitrogen implantation on stainless steel microstructure

    Science.gov (United States)

    Pelletier, H.; Mille, P.; Cornet, A.; Grob, J. J.; Stoquert, J. P.; Muller, D.

    1999-01-01

    Low energy ion implantation is known to improve chemical and mechanical surface properties of metals. This treatment is often used to enhance wear and corrosion resistance or mechanical life-time of fatigue test of stainless steel or titanium alloys. The aim of this work is to investigate these effects at higher energy, for which deeper (and still not well understood) modifications occur. High fluence (10 18 cm -2) 15N and 14N implantations at 1 MeV have been performed in the 316LL stainless steel and some specimen have been annealed in the 200-500°C temperature range. Nitrogen concentration distribution, structure, morphology and microhardness have been examined with Nuclear Resonance Analysis, Grazing Incidence X-Ray Diffraction and Nanoindentation, respectively. Precipitates of steel and chromium nitride phases and a superficial martensitic transformation can be observed, leading to a significant increase of hardness. The best result is obtained after one hour annealing at 425°C, due to a larger and more homogeneous repartition of nitride species. In this case, a near surface accumulation is observed and explained in terms of diffusion and precipitation mechanisms.

  17. Improvement in energy release properties of boron-based propellant by oxidant coating

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Daolun; Liu, Jianzhong, E-mail: jzliu@zju.edu.cn; Chen, Binghong; Zhou, Junhu; Cen, Kefa

    2016-08-20

    Highlights: • NH{sub 4}ClO{sub 4}, KNO{sub 3}, KClO{sub 4} and HMX coated B were used to prepare propellant samples. • FTIR, XRD and SEM were used for the microstructure analysis of the prepared B. • Thermal oxidation and combustion characteristics of the propellants were studied. • HMX coating was the most beneficial to the energy release of the samples. - Abstract: The energy release properties of a propellant can be improved by coating boron (B) particles with oxidants. In the study, B was coated with four different oxidants, namely, NH{sub 4}ClO{sub 4}, KNO{sub 3}, LiClO{sub 4}, and cyclotetramethylenetetranitramine (HMX), and the corresponding propellant samples were prepared. First, the structural and morphological analyses of the pretreated B were carried out. Then, the thermal analysis and laser ignition experiments of the propellant samples were carried out. Coating with NH{sub 4}ClO{sub 4} showed a better performance than mechanical mixing with the same component. Coating with KNO{sub 3} efficiently improved the ignition characteristics of the samples. Coating with LiClO{sub 4} was the most beneficial in reducing the degree of difficulty of B oxidation. Coating with HMX was the most beneficial in the heat release of the samples. The KNO{sub 3}-coated sample had a very high combustion intensity in the beginning, but then it rapidly became weak. Large amounts of sparks were ejected during the combustion of the LiClO{sub 4}-coated sample. The HMX-coated sample had the longest self-sustaining combustion time (4332 ms) and the highest average combustion temperature (1163.92 °C).

  18. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  19. Axial channeling of boron ions into silicon

    International Nuclear Information System (INIS)

    La Ferla, A.; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carnera, A.; Gasparotto, A.

    1992-01-01

    Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x10 11 and 1x10 15 atoms/cm 2 . The axial channeling concentration profiles of implanted B + were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S c , was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by S e = KE p with p [100] = 0.469±0.010 and p [110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.)

  20. Surface potential measurement of negative-ion-implanted insulators by analysing secondary electron energy distribution

    International Nuclear Information System (INIS)

    Toyota, Yoshitaka; Tsuji, Hiroshi; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki.

    1994-01-01

    The negative ion implantation method we have proposed is a noble technique which can reduce surface charging of isolated electrodes by a large margin. In this paper, the way to specify the surface potential of negative-ion-implanted insulators by the secondary electron energy analysis is described. The secondary electron energy distribution is obtained by a retarding field type energy analyzer. The result shows that the surface potential of fused quartz by negative-ion implantation (C - with the energy of 10 keV to 40 keV) is negatively charged by only several volts. This surface potential is extremely low compared with that by positive-ion implantation. Therefore, the negative-ion implantation is a very effective method for charge-up free implantation without charge compensation. (author)

  1. High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

    Science.gov (United States)

    Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

    1998-05-01

    Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

  2. Magnesium aluminate planar waveguides fabricated by C-ion implantation with different energies and fluences

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Lian; Yu, Xiao-Fei; Zhang, Lian; Wang, Tie-Jun; Qiao, Mei; Zhang, Jing; Liu, Peng; Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn

    2015-11-01

    We report on MgAl{sub 2}O{sub 4} planar waveguides produced using different energies and fluences of C-ion implantation at room temperature. Based on the prism coupling method and end-face coupling measurements, light could propagate in the C-ion-implanted samples. The Raman spectra results indicate that the MgAl{sub 2}O{sub 4} crystal lattice was damaged during the multi-energy C implantation process, whereas the absorption spectra were hardly affected by the C-ion implantation in the visible and infrared bands.

  3. Mass and energy deposition effects of implanted ions on solid sodium formate

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xiangqin E-mail: clshao@mail.ipp.ac.cn; Shao Chunlin; Yao Jianming; Yu Zengliang

    2000-07-01

    Solid sodium formate was implanted by low energy N{sup +}, H{sup +}, and Ar{sup +} ions. Measured with electron paramagnetic resonance (EPR) and Fourier-transform infrared (FT-IR), it was observed that new -CH{sub 2}-, -CH{sub 3}- groups and COO{sup -} radical ion were produced in the implanted sodium formate. Analyzing with the highly sensitive ninhydrin reaction, it was found that a new -NH{sub 2} functional group was formed upon N{sup +} ion implantation, and its yield increased along with implantation dose but decreased with the ion's energy.

  4. Energy and geometry of boron compounds. Halides BHHal2, BHal3 and their disproportionation

    International Nuclear Information System (INIS)

    Ionov, S.P.; Kuznetsov, N.T.

    1998-01-01

    Analysis of structural and thermodynamic parameters of boron halogen derivatives was conducted on the basis of structural-thermochemical (ST) model. Equilibrium interatomic B-H distances were specified for gaseous BHF 2 , BHCl 2 and BHBr 2 molecules. They were equal to 1.199±0.002, 1.175±0.003 and 1.79±0.01 A respectively. Formation heat was determined for BHI 2 : Δ f H 298 (BHI 2 (hg) = 72±5 kJ/mol. Qualitative analysis of thermodynamics of reactions of boron halide disproportionation was performed in the framework of ST-model: BHal 3 + 4BHal 3 . It was shown that halogen atoms weakened B-H-H bridges, halogens formed weak bridges in intermediate nonstable dimers

  5. Electronic structure of xenon implanted with low energy in amorphous silicon

    International Nuclear Information System (INIS)

    Barbieri, P.F.; Landers, R.; Oliveira, M.H. de; Alvarez, F.; Marques, F.C.

    2007-01-01

    Electronic structure of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4 N 45 N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix

  6. Optimization of High-Energy Implanter Beamline Pumping

    International Nuclear Information System (INIS)

    LaFontaine, Marvin; Pharand, Michel; Huang Yongzhang; Pokidov, Ilya; Ferrara, Joseph

    2006-01-01

    A high-energy implanter process chamber and its pumping configuration were designed to minimize the residual gas density in the endstation. A modified Nastran trade mark sign finite-element analysis (FEA) code was used to calculate the pressure distribution and gas flow within the process chamber. The modified FE method was readily applied to the internal geometry of the scan chamber, the corrector magnet waveguide, and the process chamber, which included the scan arm assembly, 300mm wafer, and plasma electron flood gun (PEF). Using the modified Nastran code, the gas flow and pressure distribution within the beamline geometry were calculated. The gas load consisted of H2, which is generated by photoresist (PR) outgassing from the 300mm wafer, and Xe from the plasma electron flood gun. Several pumping configurations were assessed, with each consisting of various locations and pumping capacities of vacuum pumps. The pressure distribution results for each configuration are presented, along with pumping efficiency results which are helpful in selecting the optimum pump configuration. The analysis results were compared to measured data, indicating a good correlation between the two

  7. Surface microhardening by ion implantation

    International Nuclear Information System (INIS)

    Singh, Amarjit

    1986-01-01

    The paper discusses the process and the underlying mechanism of surface microhardening by implanting suitable energetic ions in materials like 4145 steel, 304 stainless steel, aluminium and its 2024-T351 alloy. It has been observed that boron and nitrogen implantation in materials like 4145 steel and 304 stainless steel can produce a significant increase in surface hardness. Moreover the increase can be further enhanced with suitable overlay coatings such as aluminium (Al), Titanium (Ti) and carbon (C). The surface hardening due to implantation is attributed to precipitation hardening or the formation of stable/metastable phase or both. The effect of lithium implantation in aluminium and its alloy on microhardness with increasing ion dose and ion beam energy is also discussed. (author)

  8. Boron reclamation

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-07-01

    A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

  9. Exploring metal artifact reduction using dual-energy CT with pre-metal and post-metal implant cadaver comparison: are implant specific protocols needed?

    NARCIS (Netherlands)

    Wellenberg, Ruud H. H.; Donders, Johanna C. E.; Kloen, Peter; Beenen, Ludo F. M.; Kleipool, Roeland P.; Maas, Mario; Streekstra, Geert J.

    2017-01-01

    To quantify and optimize metal artifact reduction using virtual monochromatic dual-energy CT for different metal implants compared to non-metal reference scans. Dual-energy CT scans of a pair of human cadaver limbs were acquired before and after implanting a titanium tibia plate, a stainless-steel

  10. Study in mutation of alfalfa genome DNA due to low energy N+ implantation using RAPD

    International Nuclear Information System (INIS)

    Chen Roulei; Song Daojun; Yu Zengliang; Li Yufeng; Liang Yunzhang

    2001-01-01

    After implanted by various dosage N + beams, germination rate of alfalfa seeds appears to be saddle line with dosage increasing. The authors have studied in mutation of genome DNA due to low energy N + implantation, and concluded that 30 differential DNA fragments have been amplified by 8 primers (S 41 , S 42 , S 45 , S 46 , S 50 , S 52 , S 56 , S 58 ) in 100 primers, moreover, number of differential DNA fragments between CK and treatments increases with dosage. Consequently, low energy ion implantation can cause mutation of alfalfa genome DNA. The more dosage it is, the more mutation alfalfa will be

  11. Structural investigations of amorphised iron and nickel by high-fluence metalloid ion implantation

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Otto, G.; Hohmuth, K.; Heera, V.

    1987-01-01

    Boron, phosphorus and arsenic ions have been implanted into evaporated iron and nickel thin films at room temperature, and the implantation-induced microstructure has been investigated by high-voltage electron microscopy and transmission high energy electron diffraction. The metal films were implanted with ions to a constant dose of 1 x 10 17 and 5 x 10 17 ions/cm 2 respectively at energy of 50 keV. An amorphous layer was produced by boron and phosphorus ion implantation. Information on the atomic structure of the amorphous layers was obtained from the elastically diffracted electron intensity. On the basis of the correct scattering curves, the total interference function and the pair correlation function were determined. Finally, the atomic arrangement of the implantation-induced amorphous layers is discussed and structure produced by ion irradiation is compared with amorphous structures formed with other techniques. (author)

  12. Modification of high density polyethylene by gold implantation using different ion energies

    Energy Technology Data Exchange (ETDEWEB)

    Nenadović, M.; Potočnik, J. [INS Vinca, Laboratory of Atomic Physics, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia); Mitrić, M. [INS Vinca, Condensed Matter Physics Laboratory, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia); Štrbac, S. [ICTM Institute of Electrochemistry, University of Belgrade, Njegoseva 12, 11001 Belgrade (Serbia); Rakočević, Z., E-mail: zlatkora@vinca.rs [INS Vinca, Laboratory of Atomic Physics, University of Belgrade, Mike Alasa 12–14, 11001 Belgrade (Serbia)

    2013-11-01

    High density polyethylene (HDPE) samples were modified by Au{sup +} ion implantation at a dose of 5 × 10{sup 15} ions cm{sup −2}, using energies of 50, 100, 150 and 200 keV. The existence of implanted gold in the near-surface region of HDPE samples was confirmed by X-ray diffraction analysis. Surface roughness and Power Spectral Density analyses based on Atomic Force Microscopy (AFM) images of the surface topography revealed that the mechanism of HDPE modification during gold ion implantation depended on the energy of gold ions. Histograms obtained from phase AFM images indicated a qualitative change in the chemical composition of the surface during implantation with gold ions with different energies. Depth profiles obtained experimentally from cross-sectional Force Modulation Microscopy images and ones obtained from a theoretical simulation are in agreement for gold ions energies lower than 100 keV. The deviation that was observed for higher energies of the gold ions is explained by carbon precipitation in the near surface region of the HDPE, which prevented the penetration of gold ions further into the depth of the sample. - Highlights: • HDPE was implanted by Au{sup +} ions using energies of 50, 100, 150 and 200 keV. • Surface composition was analyzed from phase AFM images. • FMM depth profiles are in agreement with theoretical ones for energies up to 100 keV. • A deviation is observed for higher gold ion energies.

  13. Modification of high density polyethylene by gold implantation using different ion energies

    International Nuclear Information System (INIS)

    Nenadović, M.; Potočnik, J.; Mitrić, M.; Štrbac, S.; Rakočević, Z.

    2013-01-01

    High density polyethylene (HDPE) samples were modified by Au + ion implantation at a dose of 5 × 10 15 ions cm −2 , using energies of 50, 100, 150 and 200 keV. The existence of implanted gold in the near-surface region of HDPE samples was confirmed by X-ray diffraction analysis. Surface roughness and Power Spectral Density analyses based on Atomic Force Microscopy (AFM) images of the surface topography revealed that the mechanism of HDPE modification during gold ion implantation depended on the energy of gold ions. Histograms obtained from phase AFM images indicated a qualitative change in the chemical composition of the surface during implantation with gold ions with different energies. Depth profiles obtained experimentally from cross-sectional Force Modulation Microscopy images and ones obtained from a theoretical simulation are in agreement for gold ions energies lower than 100 keV. The deviation that was observed for higher energies of the gold ions is explained by carbon precipitation in the near surface region of the HDPE, which prevented the penetration of gold ions further into the depth of the sample. - Highlights: • HDPE was implanted by Au + ions using energies of 50, 100, 150 and 200 keV. • Surface composition was analyzed from phase AFM images. • FMM depth profiles are in agreement with theoretical ones for energies up to 100 keV. • A deviation is observed for higher gold ion energies

  14. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    International Nuclear Information System (INIS)

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  15. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  16. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Isoya, J [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H; Morita, Y; Ohshima, T

    1997-03-01

    Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

  17. Surface potential measurement of insulators in negative-ion implantation by secondary electron energy-peak shift

    International Nuclear Information System (INIS)

    Nagumo, Shoji; Toyota, Yoshitaka; Tsuji, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

    1993-01-01

    Negative-ion implantation is expected to realize charge-up free implantation. In this article, about a way to specify surface potential of negative-ion implanted insulator by secondary-electron-energy distribution, its principle and preliminary experimental results are described. By a measuring system with retarding field type energy analyzer, energy distribution of secondary electron from insulator of Fused Quartz in negative-carbon-ion implantation was measured. As a result the peak-shift of its energy distribution resulted according with the surface potential of insulator. It was found that surface potential of insulator is negatively charged by only several volts. Thus, negative-ion implanted insulator reduced its surface charge-up potential (without any electron supply). Therefore negative-ion implantation is considered to be much more effective method than conventional positive-ion implantation. (author)

  18. A simple method to produce quasi-simultaneous multiple energy helium implantation

    International Nuclear Information System (INIS)

    Paszti, F.; Fried, M.; Manuaba, A.; Mezey, G.; Kotai, E.; Lohner, T.

    1982-11-01

    If a monoenergetic ion beam is bombarding a target through an absorber foil tilted continuously (i.e. its effective thickness changing continuously), the depth distribution of the implanted ions in the sample depends on the way the absorber is moving. The present paper describes a way of absorber tilting for obtaining a uniform depth distribution and its experimental verification in the case of MeV energy helium ions implanted into aluminium target. (author)

  19. Relation between total shock energy and mortality in patients with implantable cardioverter-defibrillator.

    Science.gov (United States)

    Tenma, Taro; Yokoshiki, Hisashi; Mitsuyama, Hirofumi; Watanabe, Masaya; Mizukami, Kazuya; Kamada, Rui; Takahashi, Masayuki; Sasaki, Ryo; Maeno, Motoki; Okamoto, Kaori; Chiba, Yuki; Anzai, Toshihisa

    2018-05-15

    Implantable Cardioverter-Defibrillator (ICD) shocks have been associated with mortality. However, no study has examined the relation between total shock energy and mortality. The aim of this study is to assess the association of total shock energy with mortality, and to determine the patients who are at risk of this association. Data from 316 consecutive patients who underwent initial ICD implantation in our hospital between 2000 and 2011 were retrospectively studied. We collected shock energy for 3 years from the ICD implantation, and determined the relation of shock energy on mortality after adjusting confounding factors. Eighty-seven ICD recipients experienced shock(s) within 3 years from ICD implantation and 43 patients had died during the follow-up. The amount of shock energy was significantly associated with all-cause death [adjusted hazard ratio (HR) 1.26 (per 100 joule increase), p energy accumulation (≥182 joule) was lower (p energy accumulation (energy accumulation and all-cause death was remarkable in the patients with low left ventricular ejection fraction (LVEF ≤40%) or atrial fibrillation (AF). Increase of shock energy was related to mortality in ICD recipients. This relation was evident in patients with low LVEF or AF. Copyright © 2018 Elsevier B.V. All rights reserved.

  20. Surface-conductivity enhancement of PMMA by keV-energy metal-ion implantation

    International Nuclear Information System (INIS)

    Bannister, M.E.; Hijazi, H.; Meyer, H.M.; Cianciolo, V.; Meyer, F.W.

    2014-01-01

    An experiment has been proposed to measure the neutron electric dipole moment (nEDM) with high precision at the Oak Ridge National Laboratory (ORNL) Spallation Neutron Source. One of the requirements of this experiment is the development of PMMA (Lucite) material with a sufficiently conductive surface to permit its use as a high-voltage electrode while immersed in liquid He. At the ORNL Multicharged Ion Research Facility, an R and D activity is under way to achieve suitable surface conductivity in poly-methyl methacrylate (PMMA) using metal ion implantation. The metal implantation is performed using an electron-cyclotron-resonance (ECR) ion source and a recently developed beam line deceleration module that is capable of providing high flux beams for implantation at energies as low as a few tens of eV. The latter is essential for reaching implantation fluences exceeding 1 × 10 16 cm −2 , where typical percolation thresholds in polymers have been reported. In this contribution, we report results on initial implantation of Lucite by Ti and W beams with keV energies to average fluences in the range 0.5–6.2 × 10 16 cm −2 . Initial measurements of surface-resistivity changes are reported as function of implantation fluence, energy, and sample temperature. We also report X-ray photoelectron spectroscopy (XPS) surface and depth profiling measurements of the ion implanted samples, to identify possible correlations between the near surface and depth resolved implanted W concentrations and the measured surface resistivities

  1. Studies on mass deposition effect and energy effect of biomolecules implanted by N+ ion beam

    International Nuclear Information System (INIS)

    Shao Chunlin; Yu Zengliang

    1994-05-01

    By analyzing some spectrum of tyrosine sample implanted by N + ion beam, it is deduced that the implantation N + could react with the tyrosine molecule and substitute =C 5 H- group of benzene ring to produce a N-heterocyclic compound. This compound would notably affect the residual activity of the sample. Moreover, the percentage of the product molecules to the damaged tyrosine molecules is larger than the reciprocal of the proportion of their extinction coefficients. On the other hand, by comparing the release of inorganic phosphate, it is found that the radiation sensibility for four basic nucleotides is 5'-dTMP>5'-CMP>5'-GMP>5'-AMP. to implanted nucleotides, alkali treatment and heat treatment could increase the amount of inorganic phosphate. The amount of inorganic phosphate in the nucleotide samples directly implanted by ions beam is about 60% of the total amount of inorganic phosphate that could be released from the implanted samples heated at 90 degree C for 1.75 hours. Alkali treatment could damage and split the free bases released from the implanted nucleotides, but heat treatment might repair those damaged bases. Above results prove that ions implantation to biomolecules has the mass deposition effects and energy effects

  2. A parameter study to determine the optimal source neutron energy in boron neutron capture therapy of brain tumours

    Energy Technology Data Exchange (ETDEWEB)

    Nievaart, V A [Reactor Physics Department, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Moss, R L [Joint Research Centre of the European Commission, Postbus 2, 1755ZG Petten (Netherlands); Kloosterman, J L [Reactor Physics Department, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Hagen, T H J J van der [Reactor Physics Department, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Dam, H van [Reactor Physics Department, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands)

    2004-09-21

    The values of the parameters used in boron neutron capture therapy (BNCT) to calculate a given dose to human tissue vary with patients due to different physical, biological and/or medical circumstances. Parameters include the tissue dimensions, the {sup 10}B concentration and the relative biological effectiveness (RBE) factors for the different dose components associated with BNCT. Because there is still no worldwide agreement on RBE values, more often than not, average values for these parameters are used. It turns out that the RBE-problem can be circumvented by taking into account all imaginable parameter values. Approaching this quest from another angle: the outcome will also provide the parameters (and values) which influence the optimal source neutron energy. For brain tumours it turns out that the {sup 10}B concentration, the RBE factors for {sup 10}B as well as fast neutrons, together with the dose limit set for healthy tissue, affect the optimal BNCT source neutron energy. By using source neutrons of a few keV together with neutrons of a few eV, it ensures that, under all imaginable circumstances, a maximum of alpha (and lithium) particles can be delivered in the tumour.

  3. Enhancing breakdown strength and energy storage performance of PVDF-based nanocomposites by adding exfoliated boron nitride

    Science.gov (United States)

    Xie, Yunchuan; Wang, Jian; Yu, Yangyang; Jiang, Wanrong; Zhang, Zhicheng

    2018-05-01

    Polymer/ceramic nanocomposites are promising dielectrics for high energy storage density (Ue) capacitors. However, their low breakdown strength (Eb) and high dielectric loss due to heterogeneous structure seriously limit their applications under high electric field. In this work, boron nitride nano-sheets (BNNS) exfoliated from BN particles were introduced into PVDF-based BaTiO3 (mBT) binary composites to reduce the dielectric loss and promote the Ue. The effects of BNNS on the dielectric properties, especially breakdown resistance, and energy storage performance of the resultant composites were carefully investigated by comparing with the composites without BNNS. The introduction of BNNS could significantly improve Eb and Ue of the final composites. Ternary composite with particle contents of 6 wt% BNNS and 5 wt% mBT presented a Eb of about 400 MV/m and Ue of 5.2 J/cm3, which is 40% and 30% superior to that of the binary composite with 5 wt% mBT, respectively. That may be attributed to the 2D structure, high bulk electrical resistivity, and fine dispersion in PVDF of BNNS, which is acting as an efficient insulating barrier against the leakage current and charges conduction. The depression effect of BNNS onto the charge mobility and the interfacial polarization of the polymer composites is finely addressed, which may offer a promising strategy for the fabrication of high-k polymer composites with low loss.

  4. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  5. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

    1986-01-01

    The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

  6. Modifying the conductivity of polypyrrole through low-energy lead ion implantation

    International Nuclear Information System (INIS)

    Booth, Marsilea Adela; Leveneur, Jérôme; Costa, Alexsandro Santos; Kennedy, John; Harbison, SallyAnn; Travas-Sejdic, Jadranka

    2012-01-01

    Interest lies in the creation of novel nanocomposite materials obtained through mixing, impregnation or incorporation techniques. One such technique is ion implantation which possesses the potential for retaining properties from the base material and implanted material as well as any effects observed from combining the two. To this end low-energy (15 keV) implantation of lead ions of various fluences was performed in conducting polypyrrole films. The presence of lead-rich particles was evidenced through transmission electron microscopy. An interesting trend was observed between fluence and conductivity. Of the fluences tested, the optimum fluences of lead ion implantation in polypyrrole films for enhanced conductivity are 5 × 10 14 at. cm −2 and 2 × 10 15 at. cm −2 . The conductivity and stability appear to result from a combination of effects: polymer degradation arising from ion beam damage, an increase in charge-carriers (dications) present after implantation and precipitation of Pb-rich nanoparticles. Monitoring conductivity over time showed increased retention of conductivity levels after lead implantation. Improvements in stability for polypyrrole open avenues for application and bring polypyrrole one step closer to practical use. A mechanism is suggested for this advantageous retained conductivity. -- Highlights: ► Implanted and characterized polypyrrole films with Pb ions at different fluences. ► Samples indicate high conductivity when implanted with particular fluences. ► Increase in charge carriers and precipitation of conductive Pb-rich phase. ► Conductivity stability is higher for some implanted fluences than for pristine polypyrrole.

  7. Multi-energy ion implantation from high-intensity laser

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, Mariapompea; Torrisi, L.; Ullschmied, Jiří; Dudžák, Roman

    2016-01-01

    Roč. 61, č. 2 (2016), s. 109-113 ISSN 0029-5922. [PLASMA 2015 : International Conference on Research and Applications of Plasmas. Warsaw, 07.09.2015-11.09.2015] R&D Projects: GA MŠk(CZ) LM2011019; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389021 ; RVO:61389005 Keywords : high-intensity laser * implantation * material modification Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BL - Plasma and Gas Discharge Physics (UFP-V) Impact factor: 0.760, year: 2016

  8. Nuclear Physics meets Medicine and Biology: Boron Neutron Capture Therapy

    CERN Document Server

    F. Ballarini, F; S. Bortolussi, S; P. Bruschi, P; A.M. Clerici, A M; A. De Bari, A; P. Dionigi, P; C. Ferrari, C; M.A. Gadan, M A; N. Protti, N; S. Stella, S; C. Zonta, C; A. Zonta, A; S. Altieri, S

    2010-01-01

    BNCT is a tumour treatment based on thermal-neutron irradiation of tissues enriched with 10B, which according to the 10B(n, )7Li reaction produces particles with high Linear Energy Transfer and short range. Since this treatment can deliver a therapeutic tumour dose sparing normal tissues, BNCT represents an alternative for diffuse tumours and metastases, which show poor response to surgery and photontherapy. In 2001 and 2003, in Pavia BNCT was applied to an isolated liver, which was infused with boron, explanted, irradiated and re-implanted. A new project was then initiated for lung tumours, developing a protocol for Boron concentration measurements and performing organ-dose Monte Carlo calculations; in parallel, radiobiology studies are ongoing to characterize the BNCT effects down to cellular level. After a brief introduction, herein we will present the main activities ongoing in Pavia including the radiobiological ones, which are under investigation not only experimentally but also theoretically, basing on...

  9. Boron dose determination for BNCT using Fricke and EPR dosimetry

    International Nuclear Information System (INIS)

    Wielopolski, L.; Ciesielski, B.

    1995-01-01

    In Boron Neutron Capture Therapy (BNCT) the dominant dose delivered to the tumor is due to α and 7 Li charged particles resulting from a neutron capture by 10 B and is referred to herein as the boron dose. Boron dose is directly attributable to the following two independent factors, one boron concentration and the neutron capture energy dependent cross section of boron, and two the energy spectrum of the neutrons that interact with boron. The neutron energy distribution at a given point is dictated by the incident neutron energy distribution, the depth in tissue, geometrical factors such as beam size and patient's dimensions. To account for these factors can be accommodated by using Monte Carlo theoretical simulations. However, in conventional experimental BNCT dosimetry, e.g., using TLDs or ionization chambers, it is only possible to estimate the boron dose. To overcome some of the limitations in the conventional dosimetry, modifications in ferrous sulfate dosimetry (Fricke) and Electron Paramagnetic Resonance (EPR) dosimetry in alanine, enable to measure specifically boron dose in a mixed gamma neutron radiation fields. The boron dose, in either of the dosimeters, is obtained as a difference between measurements with boronated and unboronated dosimeters. Since boron participates directly in the measurements, the boron dosimetry reflects the true contribution, integral of the neutron energy spectrum with boron cross section, of the boron dose to the total dose. Both methods are well established and used extensively in dosimetry, they are presented briefly here

  10. Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride.

    Science.gov (United States)

    Reimers, Jeffrey R; Sajid, A; Kobayashi, Rika; Ford, Michael J

    2018-03-13

    Defect states in 2-D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods for up to 25 excited states of a paradigm system, the V N C B defect in hexagonal boron nitride (h-BN). Studied include: (i) potentially catastrophic effects for computational methods arising from the multireference nature of the closed-shell and open-shell states of the defect, which intrinsically involves broken chemical bonds, (ii) differing results from DFT and time-dependent DFT (TDDFT) calculations, (iii) comparison of cluster models to periodic-slab models of the defect, (iv) the starkly differing effects of nuclear relaxation on the various electronic states that control the widths of photoabsorption and photoemission spectra as broken bonds try to heal, (v) the effect of zero-point energy and entropy on free-energy differences, (vi) defect-localized and conduction/valence-band transition natures, and (vii) strategies needed to ensure that the lowest-energy state of a defect can be computationally identified. Averaged state-energy differences of 0.3 eV are found between CCSD(T) and MRCI energies, with thermal effects on free energies sometimes also being of this order. However, DFT-based methods can perform very poorly. Simple generalized-gradient functionals like PBE fail at the most basic level and should never be applied to defect states. Hybrid functionals like HSE06 work very well for excitations within the triplet manifold of the defect, with an accuracy equivalent to or perhaps exceeding the accuracy of the ab initio methods used. However, HSE06 underestimates triplet-state energies by on average of 0.7 eV compared to closed-shell singlet states, while open-shell singlet states are predicted to be too low in energy by 1.0 eV. This leads to misassignment of the ground state of the V N C B defect. Long

  11. Development of Linear Mode Detection for Top-down Ion Implantation of Low Energy Sb Donors

    Science.gov (United States)

    Pacheco, Jose; Singh, Meenakshi; Bielejec, Edward; Lilly, Michael; Carroll, Malcolm

    2015-03-01

    Fabrication of donor spin qubits for quantum computing applications requires deterministic control over the number of implanted donors and the spatial accuracy to within which these can be placed. We present an ion implantation and detection technique that allows us to deterministically implant a single Sb ion (donor) with a resulting volumetric distribution of performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  12. Current State and Future Perspectives of Energy Sources for Totally Implantable Cardiac Devices.

    Science.gov (United States)

    Bleszynski, Peter A; Luc, Jessica G Y; Schade, Peter; PhilLips, Steven J; Tchantchaleishvili, Vakhtang

    There is a large population of patients with end-stage congestive heart failure who cannot be treated by means of conventional cardiac surgery, cardiac transplantation, or chronic catecholamine infusions. Implantable cardiac devices, many designated as destination therapy, have revolutionized patient care and outcomes, although infection and complications related to external power sources or routine battery exchange remain a substantial risk. Complications from repeat battery replacement, power failure, and infections ultimately endanger the original objectives of implantable biomedical device therapy - eliminating the intended patient autonomy, affecting patient quality of life and survival. We sought to review the limitations of current cardiac biomedical device energy sources and discuss the current state and trends of future potential energy sources in pursuit of a lifelong fully implantable biomedical device.

  13. Formation of SiC using low energy CO2 ion implantation in silicon

    International Nuclear Information System (INIS)

    Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

    2008-01-01

    Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

  14. Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

    Science.gov (United States)

    Alleyne, Fatima Sierre

    One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective

  15. High-intensity low energy titanium ion implantation into zirconium alloy

    Science.gov (United States)

    Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

    2018-05-01

    This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

  16. Monte carlo simulation of penetration range distribution of ion beam with low energy implanted in plant seeds

    International Nuclear Information System (INIS)

    Huang Xuchu; Hou Juan; Liu Xiaoyong

    2009-01-01

    The depth and density distribution of V + ion beam implanted into peanut seed is simulated by the Monte Carlo method. The action of ions implanted in plant seeds is studied by the classical collision theory of two objects, the electronic energy loss is calculated by Lindhard-Scharff formulation. The result indicates that the depth of 200keV V + implanted into peanut seed is 5.57μm, which agrees with experimental results, and the model is appropriate to describe this interaction. This paper provides a computational method for the depth and density distribution of ions with low energy implanted in plant seeds. (authors)

  17. Implantation of keV-energy argon clusters and radiation damage in diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir; Samela, Juha; Nordlund, Kai

    2012-01-01

    We show that for impacting argon clusters, both mean projected ranges of the constituents and depths of radiation damage in diamond scale linearly with momentum. The same dependence was earlier found for keV-energy cluster implantation in graphite, thus suggesting the universality of this scaling...... law. For diamond, a good agreement for the value of displacement energy for the case of cluster impact is found by comparing the calculated target sputtering and experimentally measured depth of radiation damage....

  18. Boron-enhanced diffusion in excimer laser annealed Si

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Privitera, V.; Fortunato, G.; Mariucci, L.

    2004-01-01

    The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10 16 cm -2 forming a distribution with a width of 20-30 nm and a peak concentration of ∼5 x 10 21 cm -3 . It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm 2 results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (∼10 21 cm -3 ) exceeding the solid solubility level. RTA (30 s at 1100 deg. C) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10 20 cm -3 ). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed

  19. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.; Drouiche, Nadjib; Lounici, Hakim; Mameri, Nabil; Ghaffour, NorEddine

    2013-01-01

    , this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous

  20. Radiation damage in He implanted silicon at high temperature using multi-energies

    CERN Document Server

    David, M L; Oliviero, E; Denanot, M F; Beaufort, M F; Declemy, A; Blanchard, C; Gerasimenko, N N; Barbot, J F

    2002-01-01

    He sup + ions were implanted at 800 deg. C into (1 0 0) silicon with multiple energies and selected fluences to get a number of displacement per atom constant in a large plateau. The ion-related defects have been mainly studied by transmission electron microscopy. Both the amount and the microstructure of defects have been found to be strongly dependent on the order of implants. Faceted cavities are only observed where damage overlapping occurs. The first implant provides thus nucleation sites for cavities. The generation of these sites is less efficient when using increasing energies because of damage recovery; fewer cavities are observed. Concurrently interstitial-type defects, left brace 1 1 3 right brace agglomerates, are formed. The observed state of growth of these left brace 1 1 3 right brace defects (rod-like and ribbon-like defects) is dependent on the implantation energy order but in any cases, no dislocation loops are observed even in the deepest damage region.

  1. Damaging Effect of Low Energy N+ Implantation on Aspergillus niger Spores

    International Nuclear Information System (INIS)

    Wang Lisheng; Cai Kezhou; Cheng Maoji; Chen Lijuan; Liu Xuelan; Zhang Shuqing; Yu Zengliang

    2007-01-01

    The mutant effects of a keV range nitrogen ion (N + ) beam on enzyme-producing probiotics were studied, particularly with regard to the induction in the genome. The electron spin resonance (ESR) results showed that the signal of ESR spectrum existed in both implanted and non-implanted spores, and the yields of free radicals increased in a dose-dependent manner. The ionic etching and dilapidation of cell wall could be observed distinctly through the scanning electron microscope (SEM). The mutagenic effect on genome indicated that N + implantation could make base mutation. This study provided an insight into the roles low-energy ions might play in inducing mutagenesis of micro-organisms

  2. Damaging Effect of Low Energy N{sup +} Implantation on Aspergillus niger Spores

    Energy Technology Data Exchange (ETDEWEB)

    Lisheng, Wang [Department of Animal Science and Technology, Anhui Agricultural University, Hefei 230036 (China); Kezhou, Cai [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China); Maoji, Cheng [Department of Animal Science and Technology, Anhui Agricultural University, Hefei 230036 (China); Lijuan, Chen [Department of Animal Science and Technology, Anhui Agricultural University, Hefei 230036 (China); Xuelan, Liu [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China); Shuqing, Zhang [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China); Zengliang, Yu [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Science, Hefei 230031 (China)

    2007-06-15

    The mutant effects of a keV range nitrogen ion (N{sup +}) beam on enzyme-producing probiotics were studied, particularly with regard to the induction in the genome. The electron spin resonance (ESR) results showed that the signal of ESR spectrum existed in both implanted and non-implanted spores, and the yields of free radicals increased in a dose-dependent manner. The ionic etching and dilapidation of cell wall could be observed distinctly through the scanning electron microscope (SEM). The mutagenic effect on genome indicated that N{sup +} implantation could make base mutation. This study provided an insight into the roles low-energy ions might play in inducing mutagenesis of micro-organisms.

  3. X-ray diffraction patterns of single crystals implanted with high-energy light ions

    International Nuclear Information System (INIS)

    Wieteska, K.

    1998-01-01

    X-ray diffraction patterns of silicon and gallium arsenide single crystals implanted with high-energy protons and α-particles were studied. A various models of lattice parameter changes were analysed. The agreement between the simulation and experiment proves that the lattice parameter depth-distribution can be assumed to be proportional to vacancy distribution obtained by Monte-Carlo method and from the Biersack-Ziegler theory. Most of the X-ray experiments were performed using synchrotron source of X-ray radiation in particular in the case of back-reflection and transmission section topographic methods. The new method of direct determination of the implanted ion ranges was proposed using synchrotron radiation back-reflection section topography. A number of new interference phenomena was revealed and explained. These interferences are important in the applications of diffraction theory in studying of the real structure of implanted layers. (author)

  4. Structural and compositional characterization of LiNbO{sub 3} crystals implanted with high energy iron ions

    Energy Technology Data Exchange (ETDEWEB)

    Sada, C., E-mail: cinzia.sada@unipd.i [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Argiolas, N.; Bazzan, M.; Ciampolillo, M.V.; Zaltron, A.M.; Mazzoldi, P. [Universita di Padova and CNISM, Dipartimento di Fisica, Via Marzolo 8, 35131 Padova (Italy); Agarwal, D.C.; Avastshi, D.K. [Inter-University Accelerator Centre, Post Box-10502, New Delhi 110067 (India)

    2010-10-01

    Iron ions were implanted with a total fluence of 6 x 10{sup 17} ions/m{sup 2} into lithium niobate crystals by way of a sequential implantation at different energies of 95, 100 and 105 MeV respectively through an energy retarder Fe foil to get a uniform Fe doping of about few microns from the surface. The implanted crystals were then annealed in air in the range 200-400 {sup o}C for different durations to promote the crystalline quality that was damaged by implantation. In order to understand the basic phenomena underlying the implantation process, compositional in-depth profiles obtained by the secondary ion mass spectrometry were correlated to the structural properties of the implanted region measured by the high resolution X-ray diffraction depending on the process parameters. The optimised preparation conditions are outlined in order to recover the crystalline quality, essential for integrated photorefractive applications.

  5. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. (Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States)); Lynn, K.G.; Ghosh, V.; Welch, D.O. (Brookhaven National Lab., Upton, NY (United States))

    1992-01-01

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  6. The effects of low-energy scattering on positron implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ritley, K.A. [Dept. of Physics and Materials Research Laboratory, Univ. of Illinois, Urbana, IL (United States); Lynn, K.G.; Ghosh, V.; Welch, D.O. [Brookhaven National Lab., Upton, NY (United States)

    1992-12-31

    Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy loss process to arbitrary final kinetic energies of from 20 eV to 100 eV. This work describes a Monte Carlo simulation of the final stages of positron thermalization in Al, from 25 eV to thermal energies, via the mechanisms of conduction-electron and longitudinal acoustic phonon scattering. The latter stages of thermalization can have important effects on the stopping profiles and mean depth. A novel way to obtain information about positron energy loss by considering the time-evolution of a point-concentration (delta-function distribution) of positrons is described. The effects of a positive positron work function are examined for the first time in the context of a positron Monte Carlo calculation. Finally, some issues relating to the agreement of Monte Carlo calculations with experimental data are discussed. 6 figs., 16 refs.

  7. Facile Synthesis of Boron-Doped rGO as Cathode Material for High Energy Li–O 2 Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Feng [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Collaborative Innovation Center; Xing, Yi [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Li, Li [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Collaborative Innovation Center; Qian, Ji [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Qu, Wenjie [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Wen, Jianguo [Electron Microscopy; Miller, Dean [Electron Microscopy; Ye, Yusheng [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Chen, Renjie [Beijing Key Laboratory; amp, Engineering, Beijing Institute of Technology, Beijing 100081, PR China; Collaborative Innovation Center; Amine, Khalil [Chemical Science and Engineering Division, Argonne; Lu, Jun [Chemical Science and Engineering Division, Argonne

    2016-08-29

    To improve the electrochemical performance of the high energy Li–O2 batteries, it is important to design and construct a suitable and effective oxygen-breathing cathode. Herein, a three-dimensional (3D) porous boron-doped reduction graphite oxide (B-rGO) material with a hierarchical structure has been prepared by a facile freeze-drying method. In this design, boric acid as the boron source helps to form the 3D porous structure, owing to its cross-linking and pore-forming function. This architecture facilitates the rapid oxygen diffusion and electrolyte penetration in the electrode. Meanwhile, the boron–oxygen functional groups linking to the carbon surface or edge serve as additional reaction sites to activate the ORR process. It is vital that boron atoms have been doped into the carbon lattices to greatly activate the electrons in the carbon π system, which is beneficial for fast charge under large current densities. Density functional theory calculation demonstrates that B-rGO exhibits much stronger interactions with Li5O6 clusters, so that B-rGO more effectively activates Li–O bonds to decompose Li2O2 during charge than rGO does. With B-rGO as a catalytic substrate, the Li–O2 battery achieves a high discharge capacity and excellent rate capability. Moreover, catalysts could be added into the B-rGO substrate to further lower the overpotential and enhance the cycling performance in future.

  8. The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation

    International Nuclear Information System (INIS)

    Chan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P.; Benistant, F.; Chan, Lap

    2005-01-01

    Being able to accurately predict dopant profiles at sub-keV implant energies is critical for the microelectronic industry. Molecular Dynamics (MD), with its capability to account for multiple interactions as energy lowers, is an increasingly popular simulation method. We report our work on sub-keV implantation using MD and investigate the effect of different interatomic potentials on the range profiles. As an approximation, only pair potentials are considered in this work. Density Functional Theory (DFT) is used to calculate the pair potentials for a wide range of dopants (B, C, N, F, Si, P, Ga, Ge, As, In and Sb) in single crystalline silicon. A commonly used repulsive potential is also included in the study. Importance of the repulsive and attractive regions of the potential has been investigated with different elements and we show that a potential depicting the right attractive forces is especially important for heavy elements at low energies

  9. Mapping boron in silicon solar cells using electron energy-loss spectroscopy

    DEFF Research Database (Denmark)

    in the energies of plasmon peaks in the low loss region [5]. We use these approaches to characterize both a thick n-p junction and the 10-nm-thick p-doped layer of a working solar cell. [1] U. Kroll, C. Bucher, S. Benagli, I. Schönbächler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Büchel, M......Amorphous silicon solar cells typically consist of stacked layers deposited on plastic or metallic substrates making sample preparation for transmission electron microscopy (TEM) difficult. The amorphous silicon layer - the active part of the solar cell - is sandwiched between 10-nm-thick n- and p...... resolution using TEM is highly challenging [3]. Recently, scanning TEM (STEM) combined with electron energy-loss spectroscopy (EELS) and spherical aberration-correction has allowed the direct detection of dopant concentration of 10^20cm-3 in 65-nm-wide silicon devices [4]. Here, we prepare TEM samples...

  10. Doping of two-dimensional MoS2 by high energy ion implantation

    Science.gov (United States)

    Xu, Kang; Zhao, Yuda; Lin, Ziyuan; Long, Yan; Wang, Yi; Chan, Mansun; Chai, Yang

    2017-12-01

    Two-dimensional (2D) materials have been demonstrated to be promising candidates for next generation electronic circuits. Analogues to conventional Si-based semiconductors, p- and n-doping of 2D materials are essential for building complementary circuits. Controllable and effective doping strategies require large tunability of the doping level and negligible structural damage to ultrathin 2D materials. In this work, we demonstrate a doping method utilizing a conventional high-energy ion-implantation machine. Before the implantation, a Polymethylmethacrylate (PMMA) protective layer is used to decelerate the dopant ions and minimize the structural damage to MoS2, thus aggregating the dopants inside MoS2 flakes. By optimizing the implantation energy and fluence, phosphorus dopants are incorporated into MoS2 flakes. Our Raman and high-resolution transmission electron microscopy (HRTEM) results show that only negligibly structural damage is introduced to the MoS2 lattice during the implantation. P-doping effect by the incorporation of p+ is demonstrated by Photoluminescence (PL) and electrical characterizations. Thin PMMA protection layer leads to large kinetic damage but also a more significant doping effect. Also, MoS2 with large thickness shows less kinetic damage. This doping method makes use of existing infrastructures in the semiconductor industry and can be extended to other 2D materials and dopant species as well.

  11. THE INFLUENCE OF SURFACE-FREE ENERGY ON SUPRAGINGIVAL AND SUBGINGIVAL PLAQUE MICROBIOLOGY - AN IN-VIVO STUDY ON IMPLANTS

    NARCIS (Netherlands)

    QUIRYNEN, M; VANDERMEI, HC; BOLLEN, CML; VANDENBOSSCHE, LH; DOORNBUSCH, GI; VANSTEENBERGHE, D; BUSSCHER, HJ

    THE INFLUENCE OF SURFACE FREE ENERGY on supra- and subgingival plaque microbiology was examined in 9 patients with functional fixed prostheses supported by endosseous titanium implants. Two abutments (trans-mucosal part of the 2 stage implant) were replaced by either a new titanium abutment or a

  12. Influence of high-energy ion implantation on the microstructure of Sn - 9,8 wt. % Zn alloy

    International Nuclear Information System (INIS)

    Gusakova, O.V.

    2016-01-01

    The results of investigation of influence of Xe ion implantation on the microstructure of Sn - 9,8 wt. % Zn alloy are represented/ Analysis of the experimental results shows that the high-energy ion implantation of Xe causes a change in the particle size of zinc. (authors)

  13. MOS memory structures by very-low-energy-implanted Si in thin SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrakis, P.; Kapetanakis, E.; Normand, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Chassaing, D.; Carrada, M.; Soncini, V

    2003-08-15

    The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 deg. C) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages.

  14. Exploring metal artifact reduction using dual-energy CT with pre-metal and post-metal implant cadaver comparison: are implant specific protocols needed?

    Science.gov (United States)

    Wellenberg, Ruud H H; Donders, Johanna C E; Kloen, Peter; Beenen, Ludo F M; Kleipool, Roeland P; Maas, Mario; Streekstra, Geert J

    2017-08-25

    To quantify and optimize metal artifact reduction using virtual monochromatic dual-energy CT for different metal implants compared to non-metal reference scans. Dual-energy CT scans of a pair of human cadaver limbs were acquired before and after implanting a titanium tibia plate, a stainless-steel tibia plate and a titanium intramedullary nail respectively. Virtual monochromatic images were analyzed from 70 to 190 keV. Region-of-interest (ROI), used to determine fluctuations and inaccuracies in CT numbers of soft tissues and bone, were placed in muscle, fat, cortical bone and intramedullary tibia canal. The stainless-steel implant resulted in more pronounced metal artifacts compared to both titanium implants. CT number inaccuracies in 70 keV reference images were minimized at 130, 180 and 190 keV for the titanium tibia plate, stainless-steel tibia plate and titanium intramedullary nail respectively. Noise, measured as the standard deviation of pixels within a ROI, was minimized at 130, 150 and 140 keV for the titanium tibia plate, stainless-steel tibia plate and titanium intramedullary nail respectively. Tailoring dual-energy CT protocols using implant specific virtual monochromatic images minimizes fluctuations and inaccuracies in CT numbers in bone and soft tissues compared to non-metal reference scans.

  15. Helium diffusion in irradiated boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.

    1981-03-01

    Boron carbide has been internationally adopted as the neutron absorber material in the control and safety rods of large fast breeder reactors. Its relatively large neutron capture cross section at high neutron energies provides sufficient reactivity worth with a minimum of core space. In addition, the commercial availability of boron carbide makes it attractive from a fabrication standpoint. Instrumented irradiation experiments in EBR-II have provided continuous helium release data on boron carbide at a variety of operating temperatures. Although some microstructural and compositional variations were examined in these experiments most of the boron carbide was prototypic of that used in the Fast Flux Test Facility. The density of the boron carbide pellets was approximately 92% of theoretical. The boron carbide pellets were approximately 1.0 cm in diameter and possessed average grain sizes that varied from 8 to 30 μm. Pellet centerline temperatures were continually measured during the irradiation experiments

  16. Optical properties of bulk semiconductors and graphene/boron nitride: the Bethe-Salpeter equation with derivative discontinuity-corrected density functional energies

    DEFF Research Database (Denmark)

    Yan, Jun; Jacobsen, Karsten W.; Thygesen, Kristian S.

    2012-01-01

    -dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 and 0.7 eV, respectively, compared to freestanding h-BN. This reduction......We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method Grid-based projector-augmented wave method (GPAW). Single-particle energies and wave functions are obtained from the Gritsenko, Leeuwen, Lenthe...

  17. Synthesis of functional boron or aluminium nitride materials for energy applications (production and storage of hydrogen)

    International Nuclear Information System (INIS)

    Salameh, Chrystelle

    2014-01-01

    Porous inorganic materials are of great interest owing to their potential in energy applications. The general objective of the present thesis concerns the development of functional (carbon)nitrides for hydrogen generation and storage (material design, elaboration, properties and applications). The PDCs route, which offers a large number of opportunities in chemistry and ceramic sciences, has been applied to produce functional (carbon)nitrides materials. Firstly, we prepared porous binary systems such as AlN and BN by replicating the structure of CMK-3 and that of activated carbon. After pyrolysis and removal of the template, we demonstrated the feasibility of producing nitrides with tailored porosity. Moreover, by coupling the PDCs route with the aerogel technology, we succeeded in preparing polymer-derived AlN and BN aerogels. We assessed the potential of these porous AlN and BN materials in nano-confinement of two chemical hydrides, namely sodium alanate and ammonia borane, respectively. In both cases, the nano-confinement destabilized the network of the hydride and favored the release of H 2 at low temperature. Besides, in the case of nano-confined ammonia borane, no evolution of undesired gaseous by-products was observed, which means that pure hydrogen was produced in our conditions. Secondly, we prepared porous quaternary systems through the association of AlN/BN with Si-based ceramics. In particular, we investigated the preparation of SiAlCN with tailored porosity by using two approaches: the 'molecular building block' and 'single-source precursor' approaches. Concerning the former, we investigated the preparation of ordered meso-porous materials to be used as catalytic supports for hydrolysis of alkaline solution of sodium borohydride. We succeeded in generating high amounts of H 2 with attractive kinetics. Concerning the latter approach, the work was focused on the investigation of the chemistry of SiAlCN and SiBCN materials with a

  18. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

    International Nuclear Information System (INIS)

    Fearn, Sarah; Chater, Richard; McPhail, David

    2004-01-01

    Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

  19. Highly efficient and energy-saving sectional treatment of landfill leachate with a synergistic system of biochemical treatment and electrochemical oxidation on a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Zhao Guohua; Pang Yaning; Liu Lei; Gao Junxia; Lv Baoying

    2010-01-01

    In this paper, a synergistic combination of the biochemical treatment and electrochemical oxidation (SBEO) of landfill leachate with sectional treatment on a boron-doped diamond (BDD) electrode is proposed. The first stage involves the synergistic system of biochemical treatment and electrochemical oxidation. Then, the second stage is followed by individual biochemical treatment. Comparisons among the SBEO, electrochemical oxidation, biochemical treatment and biochemical treatment with the pretreatment of electrochemical oxidation are made systematically, which show that this method is both highly efficient and energy-saving. The higher TOC removal and low energy cost on the BDD electrode can be explained by the conversion of the bio-refractory pollutants to biodegradable organics in the electrochemical oxidation process, improving the current efficiency and reducing the energy cost. The treated wastewater is degraded only with biochemical treatment in the second stage, which further improves efficiency and reduced the energy cost.

  20. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  1. Boron removal from geothermal waters by electrocoagulation

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Yilmaz, M. Tolga; Paluluoglu, Cihan

    2008-01-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm 2 , but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

  2. Variable-energy positron-beam studies of Ni implanted with He

    International Nuclear Information System (INIS)

    Lynn, K.G.; Chen, D.M.; Nielsen, B.; Pareja, R.; Myers, S.

    1986-01-01

    Variable-energy positron-beam studies have been made on well-annealed polycrystalline Ni samples implanted with 30-, 90-, and 180-keV 4 He ions. The positron-annihilation characteristics were measured with a solid-state Ge detector at a number of different incident-positron energies and after isochronal annealing at various temperatures. The Doppler broadening of the annihilation photons was found to be strongly influenced by the 4 He implantations. The data indicate that trapping of the positrons occurred predominantly at small He bubbles. The variation of the broadening with incident-positron energy was sensitive to the depth distribution of the traps. A diffusion model assuming a square concentration-defect profile was developed and analytically fitted to the parametrized momentum data. These fitted results were compared to Monte Carlo range calculations for 4 He in Ni, and fairly good agreement was found. This investigation demonstrates the capabilities of positron annihilation for nondestructive depth profiling in ion-implanted systems. In addition, it establishes parallels between the trapping behavior of positrons and that reported elsewhere for hydrogen, thereby augmenting the present level of understanding of the technologically important trapping of hydrogen by the bubbles

  3. Dependence of boron cluster dissolution on the annealing ambient

    International Nuclear Information System (INIS)

    Radic, Ljubo; Lilak, Aaron D.; Law, Mark E.

    2002-01-01

    Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process

  4. The examination of calcium ion implanted alumina with energy filtered transmission electron microscopy

    International Nuclear Information System (INIS)

    Hunt, E.M.; Hampikian, J.M.

    1997-01-01

    Ion implantation can be used to alter in the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca + to a fluence of 5 x 10 16 ions/cm 2 . Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ∼7--8 nm in diameter. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium. Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals. EFTEM has confirmed that the aluminum present in the particles is metallic in nature, that the particles are oxygen deficient in comparison with the matrix material and that the particles are deficient in calcium, and therefore not likely to be calcia. The particles thus appear to be FCC Al (possibly alloyed with a few percent Ca) with a lattice parameter of 0.409nm. A similar result was obtained for yttrium ion implantation into alumina

  5. Intracorporeal Heat Distribution from Fully Implantable Energy Sources for Mechanical Circulatory Support: A Computational Proof-of-Concept Study

    OpenAIRE

    Biasetti, Jacopo; Pustavoitau, Aliaksei; Spazzini, Pier Giorgio

    2017-01-01

    Mechanical circulatory support devices, such as total artificial hearts and left ventricular assist devices, rely on external energy sources for their continuous operation. Clinically approved power supplies rely on percutaneous cables connecting an external energy source to the implanted device with the associated risk of infections. One alternative, investigated in the 70s and 80s, employs a fully implanted nuclear power source. The heat generated by the nuclear decay can be converted into ...

  6. X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

    International Nuclear Information System (INIS)

    Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

    2004-01-01

    Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

  7. Electromagnetic Compatibility of Transcutaneous Energy Transmission Systemfor Totally Implantable Artificial Heart

    Science.gov (United States)

    Shiba, Kenji; Koshiji, Kohji

    Transcutaneous Energy Transmission (TET) is one way of providing the energy needed to power a totally implantable artificial heart (TIAH). In the present study, an externally coupled TET system was implanted in a prototype human phantom to evaluate emission and immunity. In the emission evaluation, measurements were conducted based on CISPR Pub.11 and VDE 0871 standards, while immunity tests were based on the standards of the IEC 61000-4 series. The magnetic field of the radiated emission was measured using a loop antenna. At 0.1[MHz], we found the greatest magnetic field of 47.8 [dBμA/m], somewhat less than CISPR’s upper limit of 54 [dBμA/m]. For the conducted emission, by installing a noise filter and ferrite beads in the input section of the DC-power supply, conducted emission could be kept within the allowable limits of CISPR Pub.11 and VDE 0871. Finally, the immunity tests against radiated and conducted emission, electrostatic discharge and voltage fluctuation proved that the prototype could withstand the maximum level of disturbance. These results confirmed that the TET system implanted in a human phantom could, through modification, meet the emission and immunity standards.

  8. Martensitic transformation of type 304 stainless steel by high-energy ion implantation

    International Nuclear Information System (INIS)

    Chayahara, A.; Satou, M.; Nakashima, S.; Hashimoto, M.; Sasaki, T.; Kurokawa, M.; Kiyama, S.

    1991-01-01

    The effect of high-energy ion implantation on the structural changes of type 304 stainless steel were investigated. Gold, copper and silicon ions with an energy of 1.5 MeV was implanted into stainless steel. The fluences were in the range from 5x10 15 to 10 17 ions/cm 2 . It was found that the structure of stainless steel was transformed form the austenitic to the martensitic structure by these ion implantations. This structural change was investigated by means of X-ray diffraction and transmission electron microscopy (TEM). The depth profile of the irradiated ions was also analyzed by secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS). The degree of martensitic transformation was found to be strongly dependent on the surface pretreatment, either mechanical or electrolytic polishing. When the surface damages or strains by mechanical polishing were present, the martensitic transformation was greatly accelerated presumably due to the combined action of ion irradiation and strain-enhanced transformation. Heavier ions exhibit a high efficiency for the transformation. (orig.)

  9. Thermal desorption and bombardment-induced release of deuterium implanted into stainless steels at low energy

    International Nuclear Information System (INIS)

    Farrell, G.; Donnelly, S.E.

    1978-01-01

    Thermal desorption spectra have been obtained for low energy (15-750 eV) deuterons implanted into types 321 and 304 stainless steel, to total fluences in the range 10 13 - 10 17 deuterons/cm 2 . In each case the spectra show a peak at about 350 K, but in the 321 steel there is a second peak in the region of 900 K, the population and peak temperature of which increase with energy. Activation energies of 0.99 and 2.39 eV and a rate constant of 7 x 10 15 /s have been derived for the peaks and it is thought that the first peak corresponds to release from sites close to the surface, while the second peak may be related to trapping at impurities such as Ti. Measurements have also been made of the release of deuterium resulting from post-implantation bombardment with hydrogen ions. It is found that depletion of the first peak in the 321 steel is the result of gas sputtering, but depletion of the second peak is the result of the formation of HD during desorption, while depletion of the peak in the 304 stainless steel also results from HD formation even though this peak is the same as the first peak in the 321 steel. Estimates have also been made of the deuterium self-sputtering cross section at various energies, which show a monotonic decrease as energy increases. (Auth.)

  10. Theoretical ion implantation profiles for low energy protons under channeling conditions

    International Nuclear Information System (INIS)

    Nobel, J.A.; Sabin, J.R.; Trickey, S.B.

    1994-01-01

    The authors present early results from the CHANNEL code, which simulates the passage of ionized projectiles through bulk solids. CHANNEL solves the classical equations of motion for the projectile using a force obtained from the gradient of the quantum mechanically derived coulombic potential of the solid (determined via a full potential augmented plane wave (FLAPW) calculation on the bulk) and a quantum mechanical energy dissipation term, the stopping power, as determined from the method of Echenique, Neiminen, and Ritchie. The code then generates the trajectory of the ionic projectile for a given incident position on the unit cell face and an initial velocity. The authors use CHANNEL to generate an ion (proton) implantation profile for the test case of simple cubic hydrogen with the projectile's initial velocity parallel to the (100) channel. Further preliminary results for ion implantation profiles of protons in diamond structure Si, with initial velocity along the (100) and (110) channels, are given

  11. Effect of laser pulsed radiation on the properties of implanted layers of silicon carbide

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Voron'ko, O.N.; Nojbert, F.; Potapov, E.N.

    1984-01-01

    Results are presented of investigation into pulsed laser radiation effects on the layers of GH polytype silicon carbide converted to amorphous state by implantation of boron and aluminium ions. The implantation doses were selected to be 5x10 16 for boron and 5x10 15 cm -2 for aluminium, with the ion energies being 60 and 80 keV, respectively. The samples annealed under nanosecond regime are stated to posseys neither photoluminescence (PL) nor cathodoluminescence (CL). At the same time the layers annealed in millisecond regime have a weak PL at 100 K and CL at 300 K. The PL and CL are observed in samples, laser-annealed at radiation energy density above 150-160 J/cm 2 in case of boron ion implantation and 100-120 J/cm 2 in case of aluminium ion implantation. Increasing the radiation energy density under the nanosecond regime of laser annealing results in the surface evaporation due to superheating of amorphous layers. Increasing the energy density above 220-240 J/cm 2 results in destruction of the samples

  12. Predicting Low Energy Dopant Implant Profiles in Semiconductors using Molecular Dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    The authors present a highly efficient molecular dynamics scheme for calculating dopant density profiles in group-IV alloy, and III-V zinc blende structure materials. Their scheme incorporates several necessary methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and pair specific screened Coulomb potentials. Accumulative damage is accounted for using a Kinchin-Pease type model, inelastic energy loss is represented by a Firsov expression, and electronic stopping is described by a modified Brandt-Kitagawa model which contains a single adjustable ion-target dependent parameter. Thus, the program is easily extensible beyond a given validation range, and is therefore truly predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy and to situations where a predictive capability is required with the minimum of experimental validation. They give examples of using the code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon and gallium-arsenide. Here they can predict the experimental profile over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  13. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  14. Study of a neutron producing target via the 7Li(p,n)7Be reaction near its energy threshold for BNCT (boron neutron capture therapy)

    International Nuclear Information System (INIS)

    Burlon, Alejandro; Kreiner, Andres J.; Debray, Mario E.; Stoliar, Pablo; Kesque, Jose M.; Naab, Fabian; Ozafran, Mabel J.; Schuff, Juan; Vazquez, Monica; Caraballo, Maria E.; Valda, Alejandro; Somacal, Hector; Davidson, Miguel; Davidson, Jorge

    2000-01-01

    In the framework of Accelerator Based BNCT (AB-BNCT) the 7 Li(p,n) 7 Be reaction near its energy threshold is one of the most promising. In this work a thick LiF target irradiated with a proton beam was studied as a neutron source. The 1.88-2.0 MeV proton beam was produced by the tandem accelerator TANDAR at CNEA's facilities in Buenos Aires. A water-filled phantom, containing a boron sample was irradiated with the resulting neutron beam. The boron neutron capture reaction produces a 0.478 MeV gamma ray in 94 % of the cases. The neutron yield was monitored by detecting this gamma ray using a germanium detector with an 'anti-Compton' shield. Moreover, the thermal neutron flux was evaluated at different depths inside the phantom using bare and Cd-covered gold foils. A maximum neutron thermal flux of 1.4 x 10 8 1/(cm 2 -s-mA) was obtained at 4.2 cm from the phantom surface. (author)

  15. Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

    Energy Technology Data Exchange (ETDEWEB)

    Pentecoste, Lucile [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Thomann, Anne-Lise, E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Melhem, Amer; Caillard, Amael; Cuynet, Stéphane; Lecas, Thomas; Brault, Pascal [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Desgardin, Pierre; Barthe, Marie-France [CNRS, UPR3079 CEMHTI, 1D avenue de la Recherche Scientifique, 45071 Orléans Cedex2 (France)

    2016-09-15

    The aim of this work is to investigate the first stages of defect formation in tungsten (W) due to the accumulation of helium (He) atoms inside the crystal lattice. To reach the required implantation conditions, i.e. low He ion fluxes (10{sup 11}–10{sup 14} ions.cm{sup 2}.s{sup −1}) and kinetic energies below the W atom displacement threshold (about 500 eV for He{sup +}), an ICP source has been designed and connected to a diffusion chamber. Implantation conditions have been characterized by means of complementary diagnostics modified for measurements in this very low density helium plasma. It was shown that lowest ion fluxes could only be reached for the discharge working in capacitive mode either in α or γ regime. Special attention was paid to control the energy gained by the ions by acceleration through the sheath at the direct current biased substrate. At very low helium pressure, in α regime, a broad ion energy distribution function was evidenced, whereas a peak centered on the potential difference between the plasma and the biased substrate was found at higher pressures in the γ mode. Polycrystalline tungsten samples were exposed to the helium plasma in both regimes of the discharge and characterized by positron annihilation spectroscopy in order to detect the formed vacancy defects. It was found that W vacancies are able to be formed just by helium accumulation and that the same final implanted state is reached, whatever the operating mode of the capacitive discharge.

  16. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    International Nuclear Information System (INIS)

    Xu Gang; Wang Xiaoteng; Gan Cailing; Fang Yanqiong; Zhang Meng

    2012-01-01

    Highlights: ► We analyzed biological effects of N + implantation on dry Jatropha curcas seed. ► N + implantation greatly decreased seedling survival rate. ► At doses beyond 15 × 10 16 ion cm −2 , biological repair took place. ► CAT was essential for H 2 O 2 removal. POD mainly functioned as seed was severely hurt. ► HAsA–GSH cycle mainly contributed to the regeneration of HAsA. - Abstract: To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N + with energy of 25 keV was applied to treat the dry seed at six different doses. N + beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 × 10 16 to 15 × 10 16 ions cm −2 severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 × 10 16 ion cm −2 , biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 × 10 16 ions cm −2 may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA–GSH cycle appeared to be for regeneration of HAsA.

  17. A Wireless Magnetic Resonance Energy Transfer System for Micro Implantable Medical Sensors

    Directory of Open Access Journals (Sweden)

    Tianyang Yang

    2012-07-01

    Full Text Available Based on the magnetic resonance coupling principle, in this paper a wireless energy transfer system is designed and implemented for the power supply of micro-implantable medical sensors. The entire system is composed of the in vitro part, including the energy transmitting circuit and resonant transmitter coils, and in vivo part, including the micro resonant receiver coils and signal shaping chip which includes the rectifier module and LDO voltage regulator module. Transmitter and receiver coils are wound by Litz wire, and the diameter of the receiver coils is just 1.9 cm. The energy transfer efficiency of the four-coil system is greatly improved compared to the conventional two-coil system. When the distance between the transmitter coils and the receiver coils is 1.5 cm, the transfer efficiency is 85% at the frequency of 742 kHz. The power transfer efficiency can be optimized by adding magnetic enhanced resonators. The receiving voltage signal is converted to a stable output voltage of 3.3 V and a current of 10 mA at the distance of 2 cm. In addition, the output current varies with changes in the distance. The whole implanted part is packaged with PDMS of excellent biocompatibility and the volume of it is about 1 cm3.

  18. X-Ray diffraction studies of silicon implanted with high energy ions

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Graeff, W.

    1998-01-01

    The character of lattice deformation in silicon implanted with high energy alpha-particles and protons was studied using a number of X-ray methods. The experiments included double-crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter distribution proportional to the vacancy-interstitial distribution coming from the Biersack-ziegler theory. The theoretical rocking curves and distribution in back-reflection double-crystal and section topographs well corresponding to the experimental results were calculated using numerical integration of the takagi-taupin equations

  19. A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

    Science.gov (United States)

    Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

    2012-08-01

    An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

  20. Defect diffusion during annealing of low-energy ion-implanted silicon

    International Nuclear Information System (INIS)

    Bedrossian, P.J.; Caturla, M.J.; Diaz de la Rubia, T.

    1997-01-01

    The authors present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7 x 7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, they observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations

  1. Studies of ultra shallow n+-p junctions formed by low-energy As-implantation

    International Nuclear Information System (INIS)

    Girginoudi, D.; Georgoulas, N.; Thanailakis, A.; Polychroniadis, E.K.

    2004-01-01

    The generation and the evolution of extended defects in ultra-shallow n + -p junctions, formed by As ion implantation into silicon at low energies of 15, 10 and 5 keV and a dose of 1 x 10 15 cm -2 , and rapid thermal annealing (RTA) at temperatures of 650 deg. C ≤T ≤ 950 deg. C have been studied using transmission electron microscopy (TEM) measurements. The generated defects in the end-of-range region are dislocation loops, which grew larger and their density decreased with increasing annealing temperature. Reduction in the implantation energy causes a decrease in defect size and density as well as in dissolution temperature. The loops dissolved at 950 deg. C for 15 and 10 keV, whereas for 5 keV they dissolved at 850 deg. C. Arsenic transient enhanced diffusion (TED) studied by ToF-SIMS measurements was observed at temperatures above 650 deg. C for all implantation energies, with markedly less TED for the 5 keV, although As segregates near the surface region. The results suggest that the surface plays a key role on the formation and the dissolution of the dislocation loops and the As TED, by acting as a perfect sink of point defects. A significant degradation in electrical activation efficiency and a sharp increase in sheet resistance were observed at the low energy of 5 keV. In addition, the increase of temperature causes a slight decrease in electrical activation efficiency. Out-diffusion of As (10-25%) plays a significant role in the electrically active fraction of the dopant, due to the extreme proximity to the surface of high As concentrations. Junctions shallower than 40 nm, with 50-40% of the implanted dose electrically active and sheet resistance of 370-320 ohm/square, were obtained for the 5 keV. Finally, the TED during RTA was correctly simulated using a RTA model implemented in SSUPREM4 of the process simulator, including the dislocation loops and the dose loss

  2. A 3-DOF SOI MEMS ultrasonic energy harvester for implanted devices

    International Nuclear Information System (INIS)

    Fowler, A G; Moheimani, S O R; Behrens, S

    2013-01-01

    This paper reports the design and testing of a microelectromechanical systems (MEMS) energy harvester that is designed to harvest electrical energy from an external source of ultrasonic waves. This mechanism is potentially suited to applications including the powering of implanted devices for biomedical applications. The harvester employs a novel 3-degree of freedom design, with electrical energy being generated from displacements of a proof mass via electrostatic transducers. A silicon-on-insulator MEMS process was used to fabricate the device, with experimental characterization showing that the harvester can generate 24.7 nW, 19.8 nW, and 14.5 nW of electrical power respectively through its x-, y-, and z-axis vibrational modes

  3. Comparison of boron diffusion in silicon during shallow p{sup +}/n junction formation by non-melt excimer and green laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Aid, Siti Rahmah; Matsumoto, Satoru [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Fuse, Genshu [SEN Corporation, SBS Tower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo 158-0097 (Japan); Sakuragi, Susumu [Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka, Kanagawa 237-8555 (Japan)

    2011-12-15

    The combination of Ge pre-amorphization implantation, low-energy boron implantation, and non-melt laser annealing is a promising method for forming ultrashallow p{sup +}/n junctions in silicon. In this study, shallow p{sup +}/n junctions were formed by non-melt annealing implanted samples using a green laser (visible laser). The dopant diffusion, activation, and recrystallization of an amorphous silicon layer were compared with those obtained in our previous study in which non-melt annealing was performed using a KrF excimer laser (UV laser). The experimental results reveal that only slight diffusion of boron in the tail region occurred in green-laser-annealed samples. In contrast, remarkable boron diffusion occurred in KrF-laser-annealed samples for very short annealing times. Recrystallization of the amorphous silicon layer was slower in green-laser-annealed samples than in KrF-laser-annealed samples. We consider the penetration depth and the pulse duration are important factors that may affect boron diffusion. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    Mohapatra, K.K.; Bose, Arun

    2014-01-01

    10 B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10 B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH) 4 - ) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10 B and 11 B

  5. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B; Koetz, R [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H J; Nesper, R [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  6. A novel kerf-free wafering process combining stress-induced spalling and low energy hydrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Pingault, Timothee; Pokam-Kuisseu, Pauline Sylvia; Ntsoenzok, Esidor [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Blondeau, Jean-Philippe [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Universite d' Orleans, Chateau de la Source, 45100 Orleans (France); Ulyashin, Alexander [SINTEF, Forskningsveien 1, 0314 Oslo (Norway); Labrim, Hicham; Belhorma, Bouchra [CNESTEN, B.P. 1382 R.P., 10001 Rabat (Morocco)

    2016-12-15

    In this work, we studied the potential use of low-energy hydrogen implantation as a guide for the stress-induced cleavage. Low-energy, high fluence hydrogen implantation in silicon leads, in the right stiffening conditions, to the detachment of a thin layer, around a few hundreds nm thick, of monocrystalline silicon. We implanted monocrystalline silicon wafers with low-energy hydrogen, and then glued them on a cheap metal layer. Upon cooling down, the stress induced by the stressor layers (hardened glue and metal) leads to the detachment of a thin silicon layer, which thickness is determined by the implantation energy. We were then able to clearly demonstrate that, as expected, hydrogen oversaturation layer is very efficient to guide the stress. Using such process, thin silicon layers of around 710 nm-thick were successfully detached from low-energy implanted silicon wafers. Such layers can be used for the growth of very good quality monocrystalline silicon of around 50 μm-thick or less. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

    International Nuclear Information System (INIS)

    Fiala, J.; Armour, D. G.; Berg, J. A. van der; Holmes, A. J. T.; Goldberg, R. D.; Collart, E. H. J.

    2006-01-01

    The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

  8. A ratiometric fluorescent probe based on boron dipyrromethene and rhodamine Förster resonance energy transfer platform for hypochlorous acid and its application in living cells

    International Nuclear Information System (INIS)

    Liu, Ying; Zhao, Zhi-Min; Miao, Jun-Ying; Zhao, Bao-Xiang

    2016-01-01

    We have developed a ratiometric fluorescent probe BRT based on boron dipyrromethene (BODIPY) and rhodamine-thiohydrazide Förster resonance energy transfer (FRET) platform for sensing hypochlorous acid (HOCl) with high selectivity and sensitivity. The probe can detect HOCl in 15 s with the detection limit of 38 nM. Upon mixing with HOCl the fluorescence colour of probe BRT changed from green to orange. Moreover, probe BRT was applied to successfully monitor HOCl in living RAW 264.7 cells. - Highlights: • A probe based on BODIPY and rhodamine was developed for sensing HOCl. • The probe could sense HOCl in a ratiometric manner based on the FRET platform in PBS buffer solution. • The probe can detect HOCl in 15 s accompanied with a fluorescence colour change. • This probe was successfully used to monitor HOCl in living RAW 264.7 cells.

  9. Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai; Toyohara, Taiga; Nakata, Jyoji [Department of mathematics and physics, Kanagawa University, 2946, Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

    2016-06-15

    We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscope (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.

  10. Surface engineering by ion implantation

    International Nuclear Information System (INIS)

    Nielsen, Bjarne Roger

    1995-01-01

    Awidespread commercial applica tion iof particle accelerators is for ion implantation. Accelerator beams are used for ion implantation into metals, alloying a thin surface layer with foreign atoms to concentrations impossible to achieve by thermal processes, making for dramatic improvements in hardness and in resistance to wear and corrosion. Traditional hardening processes require high temperatures causing deformation; ion implantation on the other hand is a ''cold process'', treating the finished product. The ionimplanted layer is integrated in the substrate, avoiding the risk of cracking and delamination from normal coating processes. Surface properties may be ''engineered'' independently of those of the bulk material; the process does not use environmentally hazardous materials such as chromium in the surface coating. The typical implantation dose required for the optimum surface properties of metals is around 2 x 10 17 ion/cm 2 , a hundred times the typical doses for semiconductor processing. When surface areas of more than a few square centimetres have to be treated, the implanter must therefore be able to produce high beam currents (5 to 10 mA) to obtain an acceptable treatment time. Ion species used include nitrogen, boron, carbon, titanium, chromium and tantalum, and beam energies range from 50 to 200 keV. Since most components are three dimensional, it must be possible to rotate and tilt them in the beam, and control beam position over a large area. Examples of industrial applications are: - surface treatment of prostheses (hip and knee joints) to reduce wear of the moving parts, using biocompatible materials; - ion implantation into high speed ball bearings to protect against the aqueous corrosion in jet engines (important for service helicopters on oil rigs); - hardening of metal forming and cutting tools; - reduction of corrosive wear of plastic moulding tools, which are expensive to produce

  11. The temperature effect of low-energy ion beam implantation on seed

    International Nuclear Information System (INIS)

    Chang Shenghe; Su Mingjie; Qin Guangyong; Wu Yuping; Zhao Haizhen

    2005-01-01

    The temperature effects of low-energy ion beam implantation on the seed germination were studied. Maize dry seeds were covered with copy paper, aluminum foil and without cover, respectively. Results showed that the germination rate of the seeds covered with paper which was the bad heat transmitter was the highest among three treatments, while that covered with aluminum foil which can transmit heat energy well was the least. The germination rate of the seeds covered with nothing was the second. Temperature affected seeds germination markedly. Generally the temperature of the target room inhibited the seeds' germination. After minus the effects of the temperature in the target room, the germination rates of the seeds were modified in this paper. The modified germination rate curve was also provided. (authors)

  12. Aspects of the chemistry of boron

    International Nuclear Information System (INIS)

    Moellinger, H.

    1976-01-01

    Crystal phases of elementary boron are reviewed as well as boron-sulphur, boron-selenum, boron-tellurium, and boron-nitrogen compounds, carboranes, and boron-carbohydrate complexes. A boron cadastre of rivers and lakes serves to illustrate the role of boron in environmental protection. Technically relevant boron compounds and their uses are mentioned. (orig.) 891 HK/orig. 892 MB [de

  13. Near-infrared optical properties of Yb3+-doped silicate glass waveguides prepared by double-energy proton implantation

    Science.gov (United States)

    Shen, Xiao-Liang; Zhu, Qi-Feng; Zheng, Rui-Lin; Lv, Peng; Guo, Hai-Tao; Liu, Chun-Xiao

    2018-03-01

    We report on the preparation and properties of an optical planar waveguide structure operating at 1539 nm in the Yb3+-doped silicate glass. The waveguide was formed by using (470 + 500) keV proton implantation at fluences of (1.0 + 2.0) × 1016 ions/cm2. The waveguiding characteristics including the guided-mode spectrum and the near-field image were investigated by the m-line technique and the finite-difference beam propagation method. The energy distribution for implanted protons and the refractive index profile for the proton-implanted waveguide were simulated by the stopping and range of ions in matter and the reflectivity calculation method. The proton-implanted Yb3+-doped silicate glass waveguide is a candidate for optoelectronic elements in the near-infrared region.

  14. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    Science.gov (United States)

    Xu, Gang; Wang, Xiao-teng; Gan, Cai-ling; Fang, Yan-qiong; Zhang, Meng

    2012-09-01

    To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N+ with energy of 25 keV was applied to treat the dry seed at six different doses. N+ beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 × 1016 to 15 × 1016 ions cm-2 severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 × 1016 ion cm-2, biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 × 1016 ions cm-2 may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA-GSH cycle appeared to be for regeneration of HAsA.

  15. Implantable Biomedical Signal Monitoring Using RF Energy Harvestingand On-Chip Antenna

    Directory of Open Access Journals (Sweden)

    Jiann-Shiun Yuan

    2015-08-01

    Full Text Available This paper presents the design of an energy harvesting wireless and battery-less silicon-on-chip (SoC device that can be implanted in the human body to monitor certain health conditions. The proposed architecture has been designed on TSMC 0.18μm CMOS ICs and is an integrated system with a rectenna (antenna and rectifier and transmitting circuit, all on a single chip powered by an external transmitter and that is small enough to be inserted in the human eye, heart or brain. The transmitting and receiving antennas operate in the 5.8- GHz ISM band and have a -10dB gain. The distinguishing feature of this design is the rectenna that comprises of a singlestage diode connected NMOS rectifier and a 3-D on-chip antenna that occupies only 2.5 × 1 × 2.8 mm3 of chip area and has the ability to communicate within proximity of 5 cm while giving 10% efficiency. The external source is a reader that powers up the RF rectifier in the implantable chip triggering it to start sending data back to the reader enabling an efficient method of health evaluation for the patient.

  16. Radiation damage in urania crystals implanted with low-energy ions

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Tien Hien, E-mail: tien-hien.nguyen@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Nowicki, Lech [The Andrzej Soltan Institute for Nuclear Studies, Hoza 69, 00-681 Warsaw (Poland); Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France)

    2014-05-01

    Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO{sub 2} (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO{sub 2} crystals under irradiation unseen by the measurement of RDA.

  17. Room temperature diamond-like carbon coatings produced by low energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Markwitz, A., E-mail: a.markwitz@gns.cri.nz [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Mohr, B.; Leveneur, J. [Department for Ion Beam Technologies, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand)

    2014-07-15

    Nanometre-smooth diamond-like carbon coatings (DLC) were produced at room temperature with ion implantation using 6 kV C{sub 3}H{sub y}{sup +} ion beams. Ion beam analysis measurements showed that the coatings contain no heavy Z impurities at the level of 100 ppm, have a homogeneous stoichiometry in depth and a hydrogen concentration of typically 25 at.%. High resolution TEM analysis showed high quality and atomically flat amorphous coatings on wafer silicon. Combined TEM and RBS analysis gave a coating density of 3.25 g cm{sup −3}. Raman spectroscopy was performed to probe for sp{sup 2}/sp{sup 3} bonds in the coatings. The results indicate that low energy ion implantation with 6 kV produces hydrogenated amorphous carbon coatings with a sp{sup 3} content of about 20%. Results highlight the opportunity of developing room temperature DLC coatings with ion beam technology for industrial applications.

  18. Biological effects of low energy nitrogen ion implantation on Jatropha curcas L. seed germination

    Energy Technology Data Exchange (ETDEWEB)

    Xu Gang, E-mail: xg335300@yahoo.com.cn [Center for Research and Development of Fine Chemicals, Guizhou University, Guiyang 550025 (China); Institute of Entomology, Guizhou University, Guiyang 550025 (China); Wang Xiaoteng [Department of Agricultural Resources and Environment, College of Agricultural, Guizhou University, Guiyang 550025 (China); Gan Cailing; Fang Yanqiong; Zhang Meng [College of Life Sciences, Guizhou University, Guiyang 550025 (China)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer We analyzed biological effects of N{sup +} implantation on dry Jatropha curcas seed. Black-Right-Pointing-Pointer N{sup +} implantation greatly decreased seedling survival rate. Black-Right-Pointing-Pointer At doses beyond 15 Multiplication-Sign 10{sup 16} ion cm{sup -2}, biological repair took place. Black-Right-Pointing-Pointer CAT was essential for H{sub 2}O{sub 2} removal. POD mainly functioned as seed was severely hurt. Black-Right-Pointing-Pointer HAsA-GSH cycle mainly contributed to the regeneration of HAsA. - Abstract: To explore the biological effects of nitrogen ion beam implantation on dry Jatropha curcas seed, a beam of N{sup +} with energy of 25 keV was applied to treat the dry seed at six different doses. N{sup +} beam implantation greatly decreased germination rate and seedling survival rate. The doses within the range of 12 Multiplication-Sign 10{sup 16} to 15 Multiplication-Sign 10{sup 16} ions cm{sup -2} severely damaged the seeds: total antioxidant capacity (TAC), germination rate, seedling survival rate, reduced ascorbate acid (HAsA) and reduced glutathione (GSH) contents, and most of the tested antioxidases activity (i.e. catalase (CAT), ascorbate peroxidase (APX) and superoxide dismutase (SOD)) reached their lowest levels. At a dose of 18 Multiplication-Sign 10{sup 16} ion cm{sup -2}, biological repair took place: moderate increases were found in TAC, germination rate, seedling survival rate, HAsA and GSH contents, and some antioxidant enzyme activities (i.e. CAT, APX, SOD and GPX). The dose of 18 Multiplication-Sign 10{sup 16} ions cm{sup -2} may be the optimum dose for use in dry J. curcas seed mutation breeding. CAT, HAsA and GSH contributed to the increase of TAC, but CAT was the most important. POD performed its important role as seed was severely damaged. The main role of the HAsA-GSH cycle appeared to be for regeneration of HAsA.

  19. Energy requirements for gestation and lactation in a delayed implanter, the American badger.

    Science.gov (United States)

    Harlow, H J; Miller, B; Ryder, T; Ryder, L

    1985-01-01

    1. Two adult female badgers were water-deprived and/or fasted during the last one-half to two-thirds of pregnancy while a third pregnant female received water ad libitum and was fed meat and dog food. 2. The litter size, birth weights, post partum energy consumption, growth rate, development of homeothermy, tooth eruption and date of weaning, as well as other developmental characteristics, were not significantly different between cubs born to the fed or fasted mothers. 3. The energy demands for gestation are apparently small and are accommodated by fat reserves during periods of food deprivation. However, the calculated energy for lactation is 16 times that of gestation, which is quadruple the expenditure for most mammals. 4. As a result of delayed implantation, the length of gestation and litter weights of badgers are considerably below those predicted from allometric equations. 5. The period of lactation is therefore extremely critical to the survival of both the cubs and lactating adults which require heavy fat stores and possibly torpor to ensure sufficient energy availability during prolonged winter food shortage.

  20. Structure and reactivity of boron-ate complexes derived from primary and secondary boronic esters.

    Science.gov (United States)

    Feeney, Kathryn; Berionni, Guillaume; Mayr, Herbert; Aggarwal, Varinder K

    2015-06-05

    Boron-ate complexes derived from primary and secondary boronic esters and aryllithiums have been isolated, and the kinetics of their reactions with carbenium ions studied. The second-order rate constants have been used to derive nucleophilicity parameters for the boron-ate complexes, revealing that nucleophilicity increased with (i) electron-donating aromatics on boron, (ii) neopentyl glycol over pinacol boronic esters, and (iii) 12-crown-4 ether.

  1. Ge nano-layer fabricated by high-fluence low-energy ion implantation

    International Nuclear Information System (INIS)

    Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

    2006-01-01

    A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

  2. X-ray diffraction studies of silicon implanted with high energy ions

    Energy Technology Data Exchange (ETDEWEB)

    Wieteska, K [Institute of Atomic Energy, Otwock-Swierk, (Poland); Wierzchowski, W [Institute of Electronic Materials Technology, Warsaw, (Poland); Graeff, W [Hasylab at Desy, Hamburg, (Germany)

    1997-12-31

    The character of lattice deformation in silicon in implanted with high energy {alpha} particles and protons was studied with a number of X-ray methods. The experiments included double crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter depth distribution proportional to the vacancy-interstitial distribution coming from the Biersack-Ziegler theory. The theoretical rocking curves and density distribution in back-reflection double-crystal and section topography well corresponding to experimental results were calculated using numerical integration of the Takagi-Taupin equations. 9 figs.

  3. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  4. Studies on biological effects of low energy N+ on ion beam implantation rice

    International Nuclear Information System (INIS)

    Wang Songli; Huang Qunce; Wang Tiegu; Qin Guangyong

    2006-01-01

    Dry seeds of five varieties of rice were implanted by 25 KeV low energy N + with doses of 2.0 x 10 17 , 2.5 x 10 17 and 3.0 x 10 17 N + /cm 2 , respectively. Mutant plants were selected from their progenies and the biological effects of the mutant plants were studied. The results showed that chlorophyll content of mutant plants was higher than that of the control, and one of those is as high as 148.67% of chlorophyll content compared with the control. Isoenzyme activities (POD, CAT and SOD) of mutant plants were different from the control plants. And AFLP analysis showed that the similarity between variant plants and feminine control plants was higher than that between variant plants and masculine control plants. (authors)

  5. Ion implantation range and energy deposition codes COREL, RASE4, and DAMG2

    International Nuclear Information System (INIS)

    Brice, D.K.

    1977-07-01

    The FORTRAN codes COREL, RASE4 and DAMG2 can be used to calculate quantities associated with ion implantation range and energy deposition distributions within an amorphous target, or for ions incident far from low index directions and planes in crystalline targets. RASE4 calculates the projected range, R/sub p/, the root mean square spread in the projected range, ΔR/sub p/, and the root mean square spread of the distribution perpendicular to the projected range ΔR/sub perpendicular to/. These parameters are calculated as a function of incident ion energy, E, and the instantaneous energy of the ion, E'. They are sufficient to determine the three dimensional spatial distribution of the ions in the target in the Gaussian approximation when the depth distribution is independent of the lateral distribution. RASE4 can perform these calculations for targets having up to four different component atomic species. The code COREL is a short, economical version of RASE4 which calculates the range and straggling variables for E' = 0. Its primary use in the present package is to provide the average range and straggling variables for recoiling target atoms which are created by the incident ion. This information is used by RASE4 in calculating the redistribution of deposited energy by the target atom recoils. The code DAMG2 uses the output from RASE4 to calculate the depth distribution of energy deposition into either atomic processes or electronic processes. With other input DAMG2 can be used to calculate the depth distribution of any energy dependent interaction between the incident ions and target atoms. This report documents the basic theory behind COREL, RASE4 and DAMG2, including a description of codes, listings, and complete instructions for using the codes, and their limitations

  6. Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

    International Nuclear Information System (INIS)

    Abadli, S.; Mansour, F.

    2011-01-01

    This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si2H6) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4 x 1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 'deg'C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si-B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement. (author)

  7. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    Science.gov (United States)

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 V in gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  8. Long-wavelength germanium photodetectors by ion implantation

    International Nuclear Information System (INIS)

    Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

    1990-11-01

    Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs

  9. Enhanced energy density and thermal conductivity in poly(fluorovinylidene-co-hexafluoropropylene) nanocomposites incorporated with boron nitride nanosheets exfoliated under assistance of hyperbranched polyethylene

    Science.gov (United States)

    Ye, Huijian; Lu, Tiemei; Xu, Chunfeng; Zhong, Mingqiang; Xu, Lixin

    2018-03-01

    Polymer dielectric film with a large dielectric constant, high energy density and enhanced thermal conductivity are of significance for the development of impulse capacitors. However, the fabrication of polymer dielectrics combining high energy density and thermal conductivity is still a challenge at the moment. Here we demonstrate the facile exfoliation of hexagonal boron nitride nanosheets (BNNSs) in common organic solvents under sonication with the assistance of hyperbranched polyethylene (HBPE). The noncovalent CH-π interactions between the nanosheets and HBPE ensure the dispersion of BNNSs in organic solvents with high concentrations, because of the highly branched chain structure of HBPE. Subsequently, the resultant BNNSs with a few defects are distributed uniformly in the poly(fluorovinylidene-co-hexafluoropropylene) (P(VDF-HFP)) nanocomposite films prepared via simple solution casting. The BNNS/P(VDF-HFP) nanocomposite exhibits outstanding dielectric properties, high energy density and high thermal conductivity. The dielectric constant of the 0.5 wt% nanocomposite film is 35.5 at 100 Hz with an energy density of 5.6 J cm-3 at 325 MV m-1 and a high charge-discharge efficiency of 79% due to the depression of the charge injection and chemical species ionization in a high field. Moreover, a thermal conductivity of 1.0 wt% nanocomposite film reaches 0.91 W·m-1 · K-1, which is 3.13 times higher than that of the fluoropolymer matrix. With dipole accumulation and orientation in the interfacial zone, lightweight, flexible BNNS/P(VDF-HFP) nanocomposite films with high charge-discharge performance and thermal conductivity, exhibit promising applications in relatively high-temperature electronics and energy storage devices.

  10. Strain improvement and optimization for β-glucosidase production in Aspergillus niger by low-energy N+ implantation

    International Nuclear Information System (INIS)

    Diao Jinshan; Wang Li; Chen Zhen; Liu Hui; Nie Guangjun; Zheng Zhiming

    2010-01-01

    Low-energy N + implantation was employed to mutate Aspergillus niger Au to enhance productivity of β-glucosidase. Effects of N + on strains, survival and mutation rate were studied. After several rounds of implantation, activity of β-glucosidase of the final mutant Au 0847 reached 13.75 U/mL, which is higher by 106.8% than that of original strain Au, and its heritability was stabilized. Activity of β-glucosidase of Au 0847 reached 30.53 U/mL after further fermentation condition optimization. (authors)

  11. Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Kwok, R.W.M.

    1998-01-01

    SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C + ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers

  12. Peculiarities of neutron interaction with boron containing semiconductors

    International Nuclear Information System (INIS)

    Didyk, A.Yu.; ); Hofman, A.; Institute of Atomic Energy, Otwock/Swierk; Vlasukova, L.A.

    2009-01-01

    The results of point defect creation calculation in B 4 C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms ( 10 B) the damage creation by means of fission nuclear reaction fragments (alpha particles and 7 Li recoil nuclei) exceeds the damage created by fast neutrons (E n > 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment. (authors)

  13. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Lee, Mark W.; Shelly, Kenneth; Kane, Robert R.; Hawthorne, M. Frederick

    2006-01-01

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  14. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Kumar, N.; Radhika, R.; Kozakov, A.T.; Pandian, R.; Chakravarty, S.; Ravindran, T.R.; Dash, S.; Tyagi, A.K.

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  15. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  16. Isothermal annealing of silicon implanted with 50 keV 10B ions

    International Nuclear Information System (INIS)

    Weidner, B.; Zaschke, G.

    1974-01-01

    Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10 B ions in the dose range of 7.5 x 10 12 cm -2 to 2.0 x 10 15 cm -2 . Annealing temperatures ranged from 700 to 900 0 C. Maximum annealing time was 10 4 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range

  17. Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium

    International Nuclear Information System (INIS)

    Barfoot, K.M.; Webb, R.P.; Donnelly, S.E.

    1984-01-01

    Development of topography in thin (55.5 μg cm -2 ) self-supporting aluminium films, caused by high fluence (approx. 10 17 ions cm -2 ) irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV 4 He + ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium. (author)

  18. Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

    Energy Technology Data Exchange (ETDEWEB)

    Sangwijit, K. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Bang Khen, Chiang Mai 50290 (Thailand); Pitakrattananukool, S. [School of Science, University of Phayao, Muang, Phayao 56000 (Thailand); Anuntalabhochai, S. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand)

    2015-12-15

    Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 10{sup 12} to 1 × 10{sup 17} ions/cm{sup 2} treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

  19. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Manuaba, A. E-mail: manu@rmki.kfki.hu; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I

    2001-06-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of {sup 15}N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10{sup 16} ions/cm{sup 2} the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10{sup 16} ions/cm{sup 2} flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of {approx}0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed.

  20. Effect of MeV energy He and N pre-implantation on the formation of porous silicon

    International Nuclear Information System (INIS)

    Manuaba, A.; Paszti, F.; Ortega, C.; Grosman, A.; Horvath, Z.E.; Szilagyi, E.; Khanh, N.Q.; Vickridge, I.

    2001-01-01

    The effects of MeV energy He and N pre-implantation of Si substrate on the structure of porous silicon formed by anodic etching were studied by measuring the depth profiles of 15 N decorating the pores walls. Radiation damage was recovered by annealing after the implantation. It was found that the He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage. At a dose of 8x10 16 ions/cm 2 the He containing layer was formed with a significantly enhanced porosity due to the contribution of the large-sized bubbles. At the highest dose of 32.5x10 16 ions/cm 2 flaking took place during the anodic etching. In contrast to He, N stopped the anodic etching at a depth of critical N concentration of ∼0.9 at.%. For the lowest implantation dose, where the peak concentration was below this limit, the pores propagate through the implanted layer with an enhanced speed

  1. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo; Li, Zhenyu; Sarp, Sarper; Park, Y. G.; Amy, Gary L.; Vrouwenvelder, Johannes S.

    2014-01-01

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  2. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  3. Synthesis of borides in molybdenum implanted by B+ ions under thermal and electron annealing

    International Nuclear Information System (INIS)

    Kazdaev, Kh.R.; Akchulakov, M.T.; Bayadilov, E.M.; Ehngel'ko, V.I.; Lazarenko, A.V.; Chebukov, E.S.

    1989-01-01

    The possibility of formation of borides in the near surface layers of monocrystalline molybdenum implanted by boron ions at 35 keV energy under thermal and pulsed electron annealing by an electon beam at 140 keV energy is investigated. It is found that implantation of boron ions into molybdenum with subsequent thermal annealing permits to produce both molybdenum monoboride (α-MoB) and boride (γ-Mo 2 B) with rather different formation mechanisms. Formation of the α-MoB phase occurs with the temperature elevation from the centers appeared during implantation, while the γ-Mo 2 B phase appears only on heating the implanted layers up to definite temperature as a result of the phase transformation of the solid solution into a chemical compound. Pulsed electron annealing instead of thermal annealing results mainly in formation of molybdenum boride (γ-Mo 2 B), the state of structure is determined by the degree of heating of implanted layers and their durable stay at temperatures exceeding the threshold values

  4. Reduction of transient diffusion from 1 endash 5 keV Si+ ion implantation due to surface annihilation of interstitials

    International Nuclear Information System (INIS)

    Agarwal, A.; Gossmann, H.-.; Eaglesham, D.J.; Pelaz, L.; Jacobson, D.C.; Haynes, T.E.; Erokhin, Y.E.

    1997-01-01

    The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10 14 cm -2 Si + was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si + ion range is observed at all temperatures, extrapolating to ∼1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is reduced at smaller ion implantation energies and that this is due to increased interstitial annihilation at the surface. copyright 1997 American Institute of Physics

  5. Synthesis of Boron Nano wires, Nano tubes, and Nano sheets

    International Nuclear Information System (INIS)

    Patel, R.B.; Chou, T.; Iqbal, Z.

    2014-01-01

    The synthesis of boron nano wires, nano tubes, and nano sheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nano materials. The materials were made by using various combinations of MgB 2 , Mg(BH 4 ) 2 , MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nano wires, boron nano tubes, and boron nano sheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  6. The Breeding of a Pigment Mutant Strain of Steroid Hydroxylation Aspergillus Flavus by Low Energy Ion Implantation

    International Nuclear Information System (INIS)

    Ye Hui; Ma Jingming; Feng Chun; Cheng Ying; Zhu Suwen; Cheng Beijiu

    2009-01-01

    In the process of the fermentation of steroid C 11 α-hydroxylgenation strain Aspergillus flavus AF-ANo208, a red pigment is derived, which will affect the isolation and purification of the target product. Low energy ion beam implantation is a new tool for breeding excellent mutant strains. In this study, the ion beam implantation experiments were performed by infusing two different ions: argon ion (Ar + ) and nitrogen ion (N + ). The results showed that the optimal ion implantation was N + with an optimum dose of 2.08 x 10 15 ions/cm 2 , with which the mutant strain AF-ANm16 that produced no red pigment was obtained. The strain had high genetic stability and kept the strong capacity of C11α-hydroxylgenation, which could be utilized in industrial fermentation. The differences between the original strain and the mutant strain at a molecular level were analyzed by randomly amplified polymorphic DNA (RAPD). The results indicated that the frequency of variation was 7.00%, which would establish the basis of application investigation into the breeding of pigment mutant strains by low energy ion implantation. (ion beam bioengineering)

  7. Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact

    International Nuclear Information System (INIS)

    Holland, O.W.; Roth, E.G.

    1997-05-01

    A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of transient enhanced diffusion of the dopant

  8. Hydrolytic Stability of Boronate Ester-Linked Covalent Organic Frameworks

    KAUST Repository

    Li, Huifang; Li, Haoyuan; Dai, Qingqing; Li, Hong; Bredas, Jean-Luc

    2018-01-01

    by reducing the energy barrier by a factor of 3. Importantly, the hydrolysis of boronate ester bonds situated in a COF environment follows reaction pathways that are different and have increased energy barriers. These results point to an enhanced hydrolytic

  9. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  10. Modeling of long-range migration of boron interstitials

    International Nuclear Information System (INIS)

    Velichko, O.I.; Burunova, O.N.

    2009-01-01

    A model of the interstitial migration of ion-implanted dopant in silicon during low-temperature thermal treatment has been formulated. It is supposed that the boron interstitials are created during ion implantation or at the initial stage of annealing. During thermal treatment a migration of these impurity interstitials to the surface and in the bulk of a semiconductor occurs. On this basis, a simulation of boron redistribution during thermal annealing for 35 minutes at a temperature of 800 0 C has been carried out. The calculated boron profile agrees well with the experimental data. A number of the parameters describing the interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 0.092 μm at a temperature of 800 0 C. To carry out modeling of ion-implanted boron redistribution, the analytical solutions of nonstationary diffusion equation for impurity interstitials have been obtained. The case of Dirichlet boundary conditions and the case of reflecting boundary on the surface of a semiconductor have been considered. (authors)

  11. High fluence boron implantation into polyimide

    Czech Academy of Sciences Publication Activity Database

    Vacík, Jiří; Hnatowicz, Vladimír; Červená, Jarmila; Peřina, Vratislav; Popok, V.; Odzhaev, V.; Fink, D.

    1999-01-01

    Roč. 148, - (1999), s. 1126-1130 ISSN 0168-583X R&D Projects: GA ČR GA202/96/0077; GA AV ČR KSK1048601 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.118, year: 1999

  12. Study of low energy hydrogen ion implantation effects in silicon: electric properties

    International Nuclear Information System (INIS)

    Barhdadi, A.

    1985-07-01

    Several analysis methods have been developed: hydrogen distribution analysis by nuclear reaction, crystal disorder evaluation by R.B.S., chemical impurities identification by SIMS, optical measurements, electrical characterization of surface barriers, deep level spectroscopy DLTS, ... All these analyses have been made after implantation then after thermal annealing. A model explaining the effect of implantation then after thermal annealing. A model explaining the effect of implanted hydrogen is proposed, the implantation creates an important quantity of defects in a thin layer near the surface; a chemical attack removes them. In Schottky devices, this layer has a basic role on carrier transport phenomena. Other results are given, some of them allow to give an account of the passivation by hydrogen implantation [fr

  13. Wear life of sputtered MoSx films extended by high energy ion implantation

    International Nuclear Information System (INIS)

    Okazaki, Yasufumi; Fujiura, Hideo; Nishimura, Makoto

    2000-01-01

    The tribological characteristics of sputtered MoSx films have been reportedly improved by inert gas ion implantation. We tried to extend their wear life by introducing indium, carbon and gallium ion implantation. Pin-on-disk testers were used to measure friction coefficient and wear life in a vacuum, dry and humid air. Comparing with the unimplanted films, we found that the indium ion implanted films showed marked improvement in wear life in a vacuum. Carbon ion implanted films showed improvement in wear life in high humid air. Implantation was effective when it was conducted with maximum concentration at the interface between film and substrate rather than at the neighborhood of the interface inside a film. (author)

  14. Significantly Elevated Dielectric and Energy Storage Traits in Boron Nitride Filled Polymer Nano-composites with Topological Structure

    Science.gov (United States)

    Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Li, Shichun; Peng, Cheng

    2018-03-01

    Interface induced polarization has a prominent influence on dielectric properties of 0-3 type polymer based composites containing Si-based semi-conductors. The disadvantages of composites were higher dielectric loss, lower breakdown strength and energy storage density, although higher permittivity was achieved. In this work, dielectric, conductive, breakdown and energy storage properties of four nano-composites have been researched. Based on the cooperation of fluoropolymer/alpha-SiC layer and fluoropolymer/hexagonal-BN layer, it was confirmed constructing the heterogeneous layer-by-layer composite structure rather than homogeneous mono-layer structure could significantly reduce dielectric loss, promote breakdown strength and increase energy storage density. The former worked for a larger dielectric response and the latter layer acted as a robust barrier of charge carrier transfer. The best nano-composite could possess a permittivity of 43@100 Hz ( 3.3 times of polymer), loss of 0.07@100 Hz ( 37% of polymer), discharged energy density of 2.23 J/cm3@249 kV/cm ( 10 times of polymer) and discharged energy efficiency of 54%@249 kV/cm ( 5 times of polymer). This work might enlighten a facile route to achieve the promising high energy storage composite dielectrics by constructing the layer-by-layer topological structure.

  15. The effect of implant design and bone quality on insertion torque, resonance frequency analysis, and insertion energy during implant placement in low or low- to medium-density bone.

    Science.gov (United States)

    Wang, Tong-Mei; Lee, Ming-Shu; Wang, Juo-Song; Lin, Li-Deh

    2015-01-01

    This study investigated the effect of implant design and bone quality on insertion torque (IT), implant stability quotient (ISQ), and insertion energy (IE) by monitoring the continuous change in IT and ISQ while implants were inserted in artificial bone blocks that simulate bone of poor or poor-to-medium quality. Polyurethane foam blocks (Sawbones) of 0.16 g/cm³ and 0.32 g/cm³ were respectively used to simulate low density and low- to medium-density cancellous bone. In addition, some test blocks were laminated with a 1-mm 0.80 g/cm³ polyurethane layer to simulate cancellous bone with a thin cortical layer. Four different implants (Nobel Biocare Mk III-3.75, Mk III-4.0, Mk IV-4.0, and NobelActive-4.3) were placed into the different test blocks in accordance with the manufacturer's instructions. The IT and ISQ were recorded at every 0.5-mm of inserted length during implant insertion, and IE was calculated from the torque curve. The peak IT (PIT), final IT (FIT), IE, and final ISQ values were statistically analyzed. All implants showed increasing ISQ values when the implant was inserted more deeply. In contrast to the ISQ, implants with different designs showed dissimilar IT curve patterns during the insertion. All implants showed a significant increase in the PIT, FIT, IE, and ISQ when the test-block density increased or when the 1-mm laminated layer was present. Tapered implants showed FIT or PIT values of more than 40 Ncm for all of the laminated test blocks and for the nonlaminated test blocks of low to medium density. Parallel-wall implants did not exhibit PIT or FIT values of more than 40 Ncm for all of the test blocks. NobelActive-4.3 showed a significantly higher FIT, but a significantly lower IE, than Mk IV-4.0. While the existence of cortical bone or implant designs significantly affects the dynamic IT profiles during implant insertion, it does not affect the ISQ to a similar extent. Certain implant designs are more suitable than others if high IT is

  16. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  17. Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices

    Science.gov (United States)

    Kim, Daehee; Kim, Hanul; Yun, Wan Soo; Watanabe, Kenji; Taniguchi, Takashi; Rho, Heesuk; Bae, Myung-Ho

    2018-04-01

    Understanding the energy transport by charge carriers and phonons in two-dimensional (2D) van der Waals heterostructures is essential for the development of future energy-efficient 2D nanoelectronics. Here, we performed in situ spatially resolved Raman thermometry on an electrically biased graphene channel and its hBN substrate to study the energy dissipation mechanism in graphene/hBN heterostructures. By comparing the temperature profile along the biased graphene channel with that along the hBN substrate, we found that the thermal boundary resistance between the graphene and hBN was in the range of (1-2) ~ × 10-7 m2 K W-1 from ~100 °C to the onset of graphene break-down at ~600 °C in air. Consideration of an electro-thermal transport model together with the Raman thermometry conducted in air showed that a doping effect occurred under a strong electric field played a crucial role in the energy dissipation of the graphene/hBN device up to T ~ 600 °C.

  18. Value of monoenergetic dual-energy CT (DECT) for artefact reduction from metallic orthopedic implants in post-mortem studies.

    Science.gov (United States)

    Filograna, Laura; Magarelli, Nicola; Leone, Antonio; Guggenberger, Roman; Winklhofer, Sebastian; Thali, Michael John; Bonomo, Lorenzo

    2015-09-01

    The aim of this ex vivo study was to assess the performance of monoenergetic dual-energy CT (DECT) reconstructions to reduce metal artefacts in bodies with orthopedic devices in comparison with standard single-energy CT (SECT) examinations in forensic imaging. Forensic and clinical impacts of this study are also discussed. Thirty metallic implants in 20 consecutive cadavers with metallic implants underwent both SECT and DECT with a clinically suitable scanning protocol. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. Image quality of the seven monoenergetic images and of the corresponding SECT image was assessed qualitatively and quantitatively by visual rating and measurements of attenuation changes induced by streak artefact. Qualitative and quantitative analyses showed statistically significant differences between monoenergetic DECT extrapolated images and SECT, with improvements in diagnostic assessment in monoenergetic DECT at higher monoenergies. The mean value of OPTkeV was 137.6 ± 4.9 with a range of 130 to 148 keV. This study demonstrates that monoenergetic DECT images extrapolated at high energy levels significantly reduce metallic artefacts from orthopedic implants and improve image quality compared to SECT examination in forensic imaging.

  19. Value of monoenergetic dual-energy CT (DECT) for artefact reduction from metallic orthopedic implants in post-mortem studies

    International Nuclear Information System (INIS)

    Filograna, Laura; Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo; Guggenberger, Roman; Winklhofer, Sebastian; Thali, Michael John

    2015-01-01

    The aim of this ex vivo study was to assess the performance of monoenergetic dual-energy CT (DECT) reconstructions to reduce metal artefacts in bodies with orthopedic devices in comparison with standard single-energy CT (SECT) examinations in forensic imaging. Forensic and clinical impacts of this study are also discussed. Thirty metallic implants in 20 consecutive cadavers with metallic implants underwent both SECT and DECT with a clinically suitable scanning protocol. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. Image quality of the seven monoenergetic images and of the corresponding SECT image was assessed qualitatively and quantitatively by visual rating and measurements of attenuation changes induced by streak artefact. Qualitative and quantitative analyses showed statistically significant differences between monoenergetic DECT extrapolated images and SECT, with improvements in diagnostic assessment in monoenergetic DECT at higher monoenergies. The mean value of OPTkeV was 137.6 ± 4.9 with a range of 130 to 148 keV. This study demonstrates that monoenergetic DECT images extrapolated at high energy levels significantly reduce metallic artefacts from orthopedic implants and improve image quality compared to SECT examination in forensic imaging. (orig.)

  20. Value of monoenergetic dual-energy CT (DECT) for artefact reduction from metallic orthopedic implants in post-mortem studies

    Energy Technology Data Exchange (ETDEWEB)

    Filograna, Laura [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland); Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Rome (Italy); Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Rome (Italy); Guggenberger, Roman; Winklhofer, Sebastian [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Thali, Michael John [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland)

    2015-09-15

    The aim of this ex vivo study was to assess the performance of monoenergetic dual-energy CT (DECT) reconstructions to reduce metal artefacts in bodies with orthopedic devices in comparison with standard single-energy CT (SECT) examinations in forensic imaging. Forensic and clinical impacts of this study are also discussed. Thirty metallic implants in 20 consecutive cadavers with metallic implants underwent both SECT and DECT with a clinically suitable scanning protocol. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. Image quality of the seven monoenergetic images and of the corresponding SECT image was assessed qualitatively and quantitatively by visual rating and measurements of attenuation changes induced by streak artefact. Qualitative and quantitative analyses showed statistically significant differences between monoenergetic DECT extrapolated images and SECT, with improvements in diagnostic assessment in monoenergetic DECT at higher monoenergies. The mean value of OPTkeV was 137.6 ± 4.9 with a range of 130 to 148 keV. This study demonstrates that monoenergetic DECT images extrapolated at high energy levels significantly reduce metallic artefacts from orthopedic implants and improve image quality compared to SECT examination in forensic imaging. (orig.)

  1. Spectroscopy of bound multi exciton complexes and deep centers in implanted and annealed silicon

    International Nuclear Information System (INIS)

    Babich, V.M.; Valakh, M.Ya.; Kovalchuk, V.B.; Rudko, G.Yu.; Shakhrajchuk, N.I.

    1989-01-01

    The change of silicon properties relevant to device physics caused by ion implantation and thermal annealing is studied. It is shown that in boron-doped p-Si the increase of P + ions implantation doses from 10 12 to 10 14 ions/cm 2 lead to a decrease of the broadening of boron bound exciton bands. This behaviour is caused by implantation-induced disordering of the lattice. The subsequent thermal annealing restores the intensity and the halfwidth of the above-mentioned bands and initiates the increase of the bands which correspond to excitons bond on the implanted phosphorus ions. Measurements of phosphorus bound exciton band intensities are applicable to the characterization of the process of phosphorus activation. Analysis of low energy region of luminescence spectra of heat treated samples shows that there is a correlation between the process of implanted phosphorus activation and the one of radiation defects transformation. The influence of germanium doping on the generation of thermal donors by means of spectroscopy of deep centres luminescence has been investigated. It is shown that the introduction of germanium in concentrations of 10 19 -10 20 cm -3 effectively suppresses the generation of thermal donors and deep centres under investigation. (author)

  2. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  3. Formation and surface strengthening of nano-meter embedded phases during high energy Ti implanted and annealed steel

    International Nuclear Information System (INIS)

    Zhang Tonghe; Wu Yuguang; Cui Ping; Wang Ping

    1999-12-01

    Observation of transmission electron microscope indicated that the phase of FeTi 2 with 3.5-20 nm in diameter is embedded in high energy Ti implanted layer. It's average diameter is 8 nm. The nano-meter phases were embedded among dislocations and grain boundary in Ti implanted steel at 400 degree C. The wear resistance has been improved. The embedded structure can be changed obviously after annealing. The structure has been changed slightly after annealing at annealing temperature raging from 350 to 500 degree C, however, the hardness and wear resistance of implanted layer increased greatly. The maximum of hardness is obtained when the sample was annealed at 500 degree C for 20 min. It can be seen that the strengthening of implanted layer has enhanced by annealing indeed. The grain boundary and dislocations have disappeared; the diameter of nano-meter phases increased from 10 nm to 15 nm after annealing at temperature of 750 degree C and 1000 degree respectively. The average densities of nano-meter phases are 8.8 x 10 10 /cm 2 and 6.5 x 10 10 /cm 2 respectively for both of annealing temperature. The hardness decreased obviously when the annealing temperature is greater than 750 degree C

  4. Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

    Science.gov (United States)

    Wei, Ye; Sang, Shengbo; Zhou, Bing; Deng, Xiao; Chai, Jing; Ji, Jianlong; Ge, Yang; Huo, Yuanliang; Zhang, Wendong

    2017-09-01

    Carbon cluster ion implantation is an important technique in fabricating functional devices at micro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting-edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behavior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency (IE) is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices’ properties. Project supported by the National Natural Science Foundation of China (Nos. 51622507, 61471255, 61474079, 61403273, 51502193, 51205273), the Natural Science Foundation of Shanxi (Nos. 201601D021057, 201603D421035), the Youth Foundation Project of Shanxi Province (Nos. 2015021097), the Doctoral Fund of MOE of China (No. 20131402110013), the National High Technology Research and Development Program of China (No. 2015AA042601), and the Specialized Project in Public Welfare from The Ministry of Water Resources of China (Nos. 1261530110110).

  5. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  6. The investigation of parameters affecting boron removal by electrocoagulation method

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, 25240, Atatuerk University, Faculty of Engineering Erzurum (Turkey); Keskinler, Buelent [Department of Environmental Engineering, Gebze Institute of Technology, Gebze/Kocaeli 41400 (Turkey)

    2005-10-17

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm{sup 2}. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl{sub 2}. Added CaCl{sub 2} increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions.

  7. The investigation of parameters affecting boron removal by electrocoagulation method

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Keskinler, Buelent

    2005-01-01

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm 2 . The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl 2 . Added CaCl 2 increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions

  8. Vacancy-type defects and their annealing processes in ion-implanted Si studied by a variable-energy positron beam

    International Nuclear Information System (INIS)

    Uedono, A.; Wei, L.; Tanigawa, S.; Sugiura, J.; Ogasawara, M.

    1992-01-01

    Vacancy-type defects in B + -, P + - and Si + -ion implanted SiO 2 (43 nm)/Si(100) and Si(100) were studied by a variable-energy positron beam. Depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. For 200-keV P + -implanted specimen with a dose of 5 x 10 13 P/cm 2 , the damaged layers induced by ion-implantation were found to extend far beyond the stopping range of P-atoms. For 80-keV B + -implanted SiO 2 (43 nm)/Si(100) specimens with different ion-currents, an increase of the ion-current introduced a homogeneous amorphous layer in the subsurface region. Dominant defect species in B + - and P + -implanted specimen were identified as vacancy clusters from their annealing behavior. (author)

  9. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  10. Variable energy positron beam study of Xe-implanted uranium oxide

    International Nuclear Information System (INIS)

    Djourelov, Nikolay; Marchand, Benoît; Marinov, Hristo; Moncoffre, Nathalie; Pipon, Yves; Nédélec, Patrick; Toulhoat, Nelly; Sillou, Daniel

    2013-01-01

    Doppler broadening of annihilation gamma-line combined with a slow positron beam was used to measure the momentum density distribution of annihilating pair in a set of sintered UO 2 samples. The influence of surface polishing, of implantation with 800-keV 136 Xe 2+ at fluences of 1 × 10 15 and 1 × 10 16 Xe cm −2 , and of annealing were studied by following the changes of the momentum distribution shape by means of S and W parameters. The program used for this purpose was VEPFIT. At the two fluences in the stoichiometric as-implanted UO 2 , formation of Xe bubbles was not detected. The post-implantation annealing and over-stoichiometry in the as-implanted sample caused Xe precipitation and formation of Xe bubbles.

  11. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  12. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  13. Pulverization of boron element and proportions of boron carbide in boron

    International Nuclear Information System (INIS)

    Lang, F.M.; Finck, C.

    1956-01-01

    It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

  14. Reliable and energy-efficient communications for wireless biomedical implant systems.

    Science.gov (United States)

    Ntouni, Georgia D; Lioumpas, Athanasios S; Nikita, Konstantina S

    2014-11-01

    Implant devices are used to measure biological parameters and transmit their results to remote off-body devices. As implants are characterized by strict requirements on size, reliability, and power consumption, applying the concept of cooperative communications to wireless body area networks offers several benefits. In this paper, we aim to minimize the power consumption of the implant device by utilizing on-body wearable devices, while providing the necessary reliability in terms of outage probability and bit error rate. Taking into account realistic power considerations and wireless propagation environments based on the IEEE P802.l5 channel model, an exact theoretical analysis is conducted for evaluating several communication scenarios with respect to the position of the wearable device and the motion of the human body. The derived closed-form expressions are employed toward minimizing the required transmission power, subject to a minimum quality-of-service requirement. In this way, the complexity and power consumption are transferred from the implant device to the on-body relay, which is an efficient approach since they can be easily replaced, in contrast to the in-body implants.

  15. Synthesis of 5'-CMP and 5'-dCMP in aqueous solution induced by low energy ions implantation

    International Nuclear Information System (INIS)

    Shi Huaibin; Shao Chunlin; Wang Xiangqin; Yu Zengliang

    2001-01-01

    Low energy N + ions produced by N 2 are accelerated and then introduced into aqueous solution to induce chemical reactions. This process avoids the need of a vacuum chamber and makes it possible to investigate the actions of low energy ions in aqueous solution. In order to explore prebiotic synthesis of nucleotide via reaction between low energy ions and aqueous solution under the primitive earth conditions, low energy N + is implanted into aqueous solution containing cytosine, D-ribose, D-2-deoxyribose and NH 4 H 2 PO 4 . It is confirmed that 5'-CMP and 5'-dCMP are produced by HPLC and 1 H-NMR analyses. The relation between yields of 5'-CMP and 5'-dCMP and irradiation time has been obtained

  16. The transmission diffraction patterns of silicon implanted with high-energy α-particles

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.

    1995-01-01

    2 mm thick silicon wafers, implanted with 4.8 MeV α-particles are studied by means of transmission section topography and additionally by Lang and double-crystal methods. It was found that all three methods produced a negligible contrast in the symmetric transmission reflection apart from some fragments of the implanted area's boundaries. The interference fringes were observed in the case of asymmetric reflections. The asymmetric section topographs revealed distinct interference fringes, which cannot be explained in terms of simple bicrystal models. In particular, the curvature of these fringes may be interpreted as being due to the change in the implanted ion dose along the beam intersecting the crystal. Some features of the fringe pattern were reproduced by numerical integration of Takagi-Taupin equations. (author)

  17. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  18. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    International Nuclear Information System (INIS)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

    2014-01-01

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  20. Density functional theory investigation of oxygen interaction with boron-doped graphite

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Juan; Wang, Chen [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang, E-mail: txliang@tsinghua.edu.cn [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing, 100084 (China)

    2016-12-30

    Highlights: • Density-functional approach is applied to study the interaction of oxygen with boron-doped graphite. • Adsorption and diffusion of oxygen atoms on boron doped graphite surfaces are studied. • Recombination of oxygen is investigated by ER and LH mechanisms. • Low boron concentration facilitates O{sub 2} formation while high boron loading inhibits the recombination. • The presence of B−B bonds due to boron accumulation makes it impossible for oxygen recombination. - Abstract: Boron inserted as impurity by substitution of carbon atoms in graphite is known to change (improve or deteriorate) oxidation resistance of nuclear graphite, but the reason for both catalytic and inhibiting oxidation is still uncertain. As a first step, this work is more specially devoted to the adsorption and diffusion of oxygen atoms on the surface and related to the problem of oxygen retention on the pure and boron-containing graphite surfaces. Adsorption energies and energy barriers associated to the diffusion for molecular oxygen recombination are calculated in the density functional theory framework. The existence of boron modifies the electronic structure of the surface, which results in an increase of the adsorption energy for O. However, low boron loading makes it easier for the recombination into molecular oxygen. For high boron concentration, it induces a better O retention capability in graphite because the presence of B-B bonds decreases recombination of the adsorbed oxygen atoms. A possible explanation for both catalytic and inhibiting effects of boron in graphite is proposed.

  1. Tritium release from fast neutron irradiated boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.

    1977-01-01

    A high-energy neutron reaction with boron produces tritium. In the LMFBR control material, B 4 C, most of the tritium that is generated remains in the pellets. Potential retention mechanisms are discussed. 5 figures

  2. BC-454 boron-loaded plastic scintillator

    International Nuclear Information System (INIS)

    Bellian, J.G.

    1984-01-01

    Prototype samples of plastic scintillators containing up to 10% by weight of natural boron have been produced. The maximum size scintillators made to date are 28 mm dia. x 100 mm long. Rods containing up to 2% boron are now made routinely and work is progressing on higher concentrations. The plastics are clear and emit the same blue fluorescence as other common plastic scintillators. It is expected that rods up to 3'' dia. containing 5% boron will be produced during the next few months. BC-454 is particularly useful in neutron research, materials studies, some types of neutron dosimetry, and monitoring of medium to high energy neutrons in the presence of other types radiation. It combines attractive features that enhance its usefulness to the physics community

  3. Assessment of the effects of laser photobiomodulation on peri-implant bone repair through energy dispersive x-ray fluorescence: A study of dogs

    Science.gov (United States)

    Menezes, R. F.; Araújo, N. C.; Carneiro, V. S. M.; Moreno, L. M.; Guerra, L. A. P.; Santos Neto, A. P.; Gerbi, M. E. M.

    2016-03-01

    Bone neoformation is essential in the osteointegration of implants and has been correlated with the repair capacity of tissues, the blood supply and the function of the cells involved. Laser therapy accelerates the mechanical imbrication of peri-implant tissue by increasing osteoblastic activity and inducing ATP, osteopontin and the expression of sialoproteins. Objective: The aim of the present study was to assess peri-implant bone repair using the tibia of dogs that received dental implants and laser irradiation (AsGaAl 830nm - 40mW, CW, f~0.3mm) through Energy Dispersive X-ray Fluorescence (EDXRF). Methodology: Two groups were established: G1 (Control, n=20; two dental implants were made in the tibia of each animal; 10 animals); G2 (Experimental, n=20, two dental implants were made in the tibia each animal + Laser therapy; 10 animals). G2 was irradiated every 48 hours for two weeks, with a total of seven sessions. The first irradiation was conducted during the surgery, at which time a point in the surgical alveolus was irradiated prior to the placement of the implant and four new spatial positions were created to the North, South, East and West (NSEW) of the implant. The subsequent sessions involved irradiation at these four points and at one infra-implant point (in the direction of the implant apex). Each point received 4J/cm2 and a total dose of 20J/cm2 per session (treatment dose=140J/cm2). The specimens were removed 15 and 30 days after the operation for the EDXRF test. The Mann- Whitney statistical test was used to assess the results. Results: The increase in the calcium concentration in the periimplant region of the irradiated specimens (G2) was statistically significant (p repair in the peri-implant region.

  4. Effects of non-implantation factors on survival rate of microbe irradiated by low-energy N+

    International Nuclear Information System (INIS)

    Yang Tianyou; Chen Linhai; Qin Guangyong; Li Zongwei; Su Mingjie; Wang Yanping; Chang Shenghe; Huo Yuping; Li Zongyi

    2006-01-01

    The effects of non-implantation factors, such as drying, vacuum and the staying time of the E.coli LE392 culture, on survival rate of E.coli LE392 were studied when E.coli LE392 was irradiated by the low-energy N + . The results show that the survival rate of E.coli LE392 does not reduce steadily all the time but rapidly drops sometime during drying. The survival rate of E.coli LE392 declines sharply as the samples are placed in vacuum, then falls in distinctively with increasing of time. the tolerance of E.coli LE392 towards vacuum increasingly strengthens when the E.coli LE392 culture is placed at room temperature. Preparing the culture in batchs can ensure the consistency of the irradiated samples and avoid errors caused by the inconsistent samples. When the non-implantation factors are controlled, E.coli is implanted by 30 kev N + of 1 x 10 14 cm -2 and 3 x 10 15 cm -2 , respectively. And the results show no difference in the E.coli's survival rates between batchs at the same dose. (authors)

  5. Finishing broiler toms using an estradiol 17 beta implant together with a high energy-low protein final feed.

    Science.gov (United States)

    Moran, E T; Etches, R J

    1983-06-01

    Wrolstad Small White toms were implanted with 10 mg of estradiol 17 beta monopalmitate (EMP) at 8 weeks of age. Common corn-soybean meal feeds were given through to 12 weeks, then one-half the birds from control and EMP groups received either an adequate (16% protein, 3166 kcal ME/kg) or high energy-low protein (HE-LP, 12%, 3373 kcal) feed to 14 weeks. No differences in weight gain and feed conversion occurred between EMP and control treatments at 12 weeks but at 14 weeks when the HE-LP diet had been fed the implanted birds performed better than controls. The HE-LP feed led to body weights and feed efficiencies below that of toms given adequate diet. In all cases, EMP elicited male secondary sex characteristics rather than feminization. Processing losses were increased with EMP and when the HE-LP feed had been given. Both treatments also improved finish assessment and were additive to the extent that a substantial increase in grade occurred. Effects on carcass composition, yield of commercial cuts, and cooking loss were small. Implantation, reduced meat yield percentage of breast and thigh. The increase in grade advantage from combining EMP with a feed that forced fat deposition more than compensated for the adverse effects.

  6. Lab-based x-ray tomography of a cochlear implant using energy discriminating detectors for metal artefact reduction

    Science.gov (United States)

    Yokhana, Viona S. K.; Arhatari, Benedicta D.; Gureyev, Timur E.; Abbey, Brian

    2018-01-01

    X-ray computed tomography (XCT) is an important clinical diagnostic tool which is also used in a range of biological imaging applications in research. The increasing prevalence of metallic implants in medical and dental radiography and tomography has driven the demand for new approaches to solving the issue of metal artefacts in XCT. Metal artefacts occur when a highly absorbing material is imaged which is in boundary contact with one or more weakly absorbing components, such as soft-tissue. The resulting `streaking' in the reconstructed images creates significant challenges for X-ray analysis due to the non-linear dependence on the absorption properties of the sample. In this paper we introduce a new approach to removing metal artefacts which exploits the capabilities of the recently available, photon-counting PiXirad detector. Our approach works for standard lab-based polychromatic X-ray tubes and does not rely on any postprocessing of the data. The method is demonstrated using both simulated data from a test phantom and experimental data collected from a cochlear implant. The results show that by combining the individual images, which are simultaneously generated for each different energy threshold, artefact -free segmentation of the implant from the surrounding biological tissue is achieved.

  7. Operation and Applications of the Boron Cathodic Arc Ion Source

    International Nuclear Information System (INIS)

    Williams, J. M.; Freeman, J. H.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.

    2008-01-01

    The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.

  8. Application of low-energy ionic implantation for creation of geteroepitaxial nanofilms and nanostructures

    International Nuclear Information System (INIS)

    Tashmukhamedova, D.A.; Umirzakov, B.E.; Kurbanov, Kh.Kh.

    2010-01-01

    The optimum regimes of ion-implantation and annealing for obtaining the nanocrystals and nanofilms of metal silicides are determined. For the first time, it is shown that quantum character of silicide nanocrystals appears, when their sizes are less than 25 -30 nm. (authors)

  9. Comparison of fine particle colemanite and boron frit in concrete for time-strength relationship

    International Nuclear Information System (INIS)

    Volkman, D.E.; Bussolini, P.L.

    1992-01-01

    This paper reports that the element boron, when added to concrete, has proved effective in shielding neutron particles by absorbing the neutron and emitting a low-energy gamma ray. The various boron additives used with concrete can severely retard the set time and strength gain. An advantage to using small particle size boron is that the smaller grain size provides better boron disbursement within the concrete matrix to absorb neutrons. However, boron additives of powder consistency are usually not used due to the greater potential of forming chemical solutions that act as a retarder in the concrete. Research has shown that the amount of boron additives in concrete can be reduced significantly if fine grain particles can be successfully incorporated into the concrete matrix. The purpose of this study is to compare strength gain characteristics of concrete mixes containing various quantities of fine grain boron additive. The boron additive colemanite, a natural mineral, is compared with two brands of manufactured aggregate, boron frit. Concrete test cylinders are molded for testing the compressive strength of the mix after 4, 7, 28, and 56 days. Tested are five different quantities of colemanite as well as five comparable amounts of boron frit for each brand of the material. The test values are compared with a control concrete specimen containing no boron additive. Results of this study can be used to optimize the cost and effectiveness of boron additives in radiation shielding concrete

  10. Multilayer out-of-plane overlap electrostatic energy harvesting structure actuated by blood pressure for powering intra-cardiac implants

    Science.gov (United States)

    Deterre, M.; Risquez, S.; Bouthaud, B.; Dal Molin, R.; Woytasik, M.; Lefeuvre, E.

    2013-12-01

    We present an innovative multilayer out-of-plane electrostatic energy harvesting device conceived in view of scavenging energy from regular blood pressure in the heart. This concept involves the use of a deformable packaging for the implant in order to transmit the blood pressure to the electrostatic transducer. As shown in previous work, this is possible by using thin metal micro-bellows structure, providing long term hermeticity and high flexibility. The design of the electrostatic device has overcome several challenges such as the very low frequency of the mechanical excitation (1 to 2 Hz) and the small available room in the medical implant. Analytical and numerical models have been used to maximize the capacitance variation, and hence to optimize the energy conversion. We have theoretically shown that a 25-layer transducer with 6-mm diameter and 1-mm thickness could harvest at least 20 mJ per heart beat in the left ventricle under a maximum voltage of 75 V. These results show that the proposed concept is promising and could power the next generation of leadless pacemakers.

  11. Shock Response of Boron Carbide

    National Research Council Canada - National Science Library

    Dandekar, D. P. (Dattatraya Purushottam)

    2001-01-01

    .... The present work was undertaken to determine tensile/spall strength of boron carbide under plane shock wave loading and to analyze all available shock compression data on boron carbide materials...

  12. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L

    2001-05-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO{sub 2} layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

  13. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    International Nuclear Information System (INIS)

    Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L.

    2001-01-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO 2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing

  14. Molecular precursor derived silicon boron carbonitride/carbon nanotube and silicon oxycarbide/carbon nanotube composite nanowires for energy based applications

    Science.gov (United States)

    Bhandavat, Romil

    Molecular precursor derived ceramics (also known as polymer-derived ceramics or PDCs) are high temperature glasses that have been studied for applications involving operation at elevated temperatures. Prepared from controlled thermal degradation of liquid-phase organosilicon precursors, these ceramics offer remarkable engineering properties such as resistance to crystallization up to 1400 °C, semiconductor behavior at high temperatures and intense photoluminescence. These properties are a direct result of their covalent bonded amorphous network and free (-sp2) carbon along with mixed Si/B/C/N/O bonds, which otherwise can not be obtained through conventional ceramic processing techniques. This thesis demonstrates synthesis of a unique core/shell type nanowire structure involving either siliconboroncarbonitride (SiBCN) or siliconoxycarbide (SiOC) as the shell with carbon nanotube (CNT) acting as the core. This was made possible by liquid phase functionalization of CNT surfaces with respective polymeric precursor (e.g., home-made boron-modified polyureamethylvinylsilazane for SiBCN/CNT and commercially obtained polysiloxane for SiOC/CNT), followed by controlled pyrolysis in inert conditions. This unique architecture has several benefits such as high temperature oxidation resistance (provided by the ceramic shell), improved electrical conductivity and mechanical toughness (attributed to the CNT core) that allowed us to explore its use in energy conversion and storage devices. The first application involved use of SiBCN/CNT composite as a high temperature radiation absorbant material for laser thermal calorimeter. SiBCN/CNT spray coatings on copper substrate were exposed to high energy laser beams (continuous wave at 10.6 mum 2.5 kW CO2 laser, 10 seconds) and resulting change in its microstructure was studied ex-situ. With the aid of multiple techniques we ascertained the thermal damage resistance to be 15 kW/cm -2 with optical absorbance exceeding 97%. This represents

  15. Boronated liposome development and evaluation

    International Nuclear Information System (INIS)

    Hawthorne, M.F.

    1995-01-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues

  16. Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

    International Nuclear Information System (INIS)

    Vervisch, Vanessa; Larmande, Yannick; Delaporte, Philippe; Sarnet, Thierry; Sentis, Marc; Etienne, Hasnaa; Torregrosa, Frank; Cristiano, Fuccio; Fazzini, Pier Francesco

    2009-01-01

    Today, the main challenges for the realization of the source/drain extensions concern the ultra-low energy implantation and the activation of the maximum amount of dopants with a minimized diffusion. Among the different annealing processes, one solution is the laser thermal annealing. Many studies [F. Torregrosa, C. Laviron, F. Milesi, M. Hernandez, H. Faik, J. Venturini, Proc. 14th International Conference on Ion Implant Technology, 2004; M. Hernandez, J. Venturini, D. Zahorski, J. Boulmer, D. Debarre, G. Kerrien, T. Sarnet, C. Laviron, M.N Semeria, D. Camel, J.L Santailler, Appl. Surf. Sci. 208-209 (2003) 345-351] have shown that the association of Plasma Immersion Ion Implantation (PIII) and Laser Thermal Process (LTP) allows to obtain junctions of a few nanometers with a high electrical activation. All the wafers studied have been implanted by PULSION (PIII implanter developed by Ion Beam Services) with an acceleration voltage of 1 kV and a dose of 6 x 10 15 at./cm 2 . In this paper, we compare the annealing process achieved with three excimer lasers: ArF, KrF and XeCl with a wavelength of respectively 193, 248 and 308 nm. We analyse the results in terms of boron activation and junction depth. To complete this study, we have observed the effect of pre-amorphization implantation (PAI) before PIII process on boron implantation and boron activation. We show that Ge PAI implanted by classical beam line allows a decrease of the junction depth from 20 down to 12 nm in the as-implanted condition. Transmission Electron Microscopy (TEM) analyses were performed in order to study the structure of pre-amorphized silicon and to estimate the thickness of the amorphous layer. In order to determine the sheet resistance (R s ) and the junction depth (X j ), we have used the four-point probe technique (4PP) and secondary ion mass spectrometry (SIMS) analysis. To complete the electrical characterizations some samples have been analyzed by non-contact optical measurements. All the

  17. Intracorporeal Heat Distribution from Fully Implantable Energy Sources for Mechanical Circulatory Support: A Computational Proof-of-Concept Study

    Directory of Open Access Journals (Sweden)

    Jacopo Biasetti

    2017-10-01

    Full Text Available Mechanical circulatory support devices, such as total artificial hearts and left ventricular assist devices, rely on external energy sources for their continuous operation. Clinically approved power supplies rely on percutaneous cables connecting an external energy source to the implanted device with the associated risk of infections. One alternative, investigated in the 70s and 80s, employs a fully implanted nuclear power source. The heat generated by the nuclear decay can be converted into electricity to power circulatory support devices. Due to the low conversion efficiencies, substantial levels of waste heat are generated and must be dissipated to avoid tissue damage, heat stroke, and death. The present work computationally evaluates the ability of the blood flow in the descending aorta to remove the locally generated waste heat for subsequent full-body distribution and dissipation, with the specific aim of investigating methods for containment of local peak temperatures within physiologically acceptable limits. To this aim, coupled fluid–solid heat transfer computational models of the blood flow in the human aorta and different heat exchanger architectures are developed. Particle tracking is used to evaluate temperature histories of cells passing through the heat exchanger region. The use of the blood flow in the descending aorta as a heat sink proves to be a viable approach for the removal of waste heat loads. With the basic heat exchanger design, blood thermal boundary layer temperatures exceed 50°C, possibly damaging blood cells and proteins. Improved designs of the heat exchanger, with the addition of fins and heat guides, allow for drastically lower blood temperatures, possibly leading to a more biocompatible implant. The ability to maintain blood temperatures at biologically compatible levels will ultimately allow for the body-wise distribution, and subsequent dissipation, of heat loads with minimum effects on the human physiology.

  18. Intracorporeal Heat Distribution from Fully Implantable Energy Sources for Mechanical Circulatory Support: A Computational Proof-of-Concept Study.

    Science.gov (United States)

    Biasetti, Jacopo; Pustavoitau, Aliaksei; Spazzini, Pier Giorgio

    2017-01-01

    Mechanical circulatory support devices, such as total artificial hearts and left ventricular assist devices, rely on external energy sources for their continuous operation. Clinically approved power supplies rely on percutaneous cables connecting an external energy source to the implanted device with the associated risk of infections. One alternative, investigated in the 70s and 80s, employs a fully implanted nuclear power source. The heat generated by the nuclear decay can be converted into electricity to power circulatory support devices. Due to the low conversion efficiencies, substantial levels of waste heat are generated and must be dissipated to avoid tissue damage, heat stroke, and death. The present work computationally evaluates the ability of the blood flow in the descending aorta to remove the locally generated waste heat for subsequent full-body distribution and dissipation, with the specific aim of investigating methods for containment of local peak temperatures within physiologically acceptable limits. To this aim, coupled fluid-solid heat transfer computational models of the blood flow in the human aorta and different heat exchanger architectures are developed. Particle tracking is used to evaluate temperature histories of cells passing through the heat exchanger region. The use of the blood flow in the descending aorta as a heat sink proves to be a viable approach for the removal of waste heat loads. With the basic heat exchanger design, blood thermal boundary layer temperatures exceed 50°C, possibly damaging blood cells and proteins. Improved designs of the heat exchanger, with the addition of fins and heat guides, allow for drastically lower blood temperatures, possibly leading to a more biocompatible implant. The ability to maintain blood temperatures at biologically compatible levels will ultimately allow for the body-wise distribution, and subsequent dissipation, of heat loads with minimum effects on the human physiology.

  19. An Implantable Cardiovascular Pressure Monitoring System with On-Chip Antenna and RF Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Yu-Chun Liu

    2015-08-01

    Full Text Available An implantable wireless system with on-chip antenna for cardiovascular pressure monitor is studied. The implantable device is operated in a batteryless manner, powered by an external radio frequency (RF power source. The received RF power level can be sensed and wirelessly transmitted along with blood pressure signal for feedback control of the external RF power. The integrated electronic system, consisting of a capacitance-to-voltage converter, an adaptive RF powering system, an RF transmitter and digital control circuitry, is simulated using a TSMC 0.18 μm CMOS technology. The implanted RF transmitter circuit is combined with a low power voltage-controlled oscillator resonating at 5.8 GHz and a power amplifier. For the design, the simulation model is setup using ADS and HFSS software. The dimension of the antenna is 1 × 0.6 × 4.8 mm3 with a 1 × 0.6 mm2 on-chip circuit which is small enough to place in human carotid artery.

  20. Structure and single-phase regime of boron carbides

    International Nuclear Information System (INIS)

    Emin, D.

    1988-01-01

    The boron carbides are composed of twelve-atom icosahedral clusters which are linked by direct covalent bonds and through three-atom intericosahedral chains. The boron carbides are known to exist as a single phase with carbon concentrations from about 8 to about 20 at. %. This range of carbon concentrations is made possible by the substitution of boron and carbon atoms for one another within both the icosahedra and intericosahedral chains. The most widely accepted structural model for B 4 C (the boron carbide with nominally 20% carbon) has B/sub 11/C icosahedra with C-B-C intericosahedral chains. Here, the free energy of the boron carbides is studied as a function of carbon concentration by considering the effects of replacing carbon atoms within B 4 C with boron atoms. It is concluded that entropic and energetic considerations both favor the replacement of carbon atoms with boron atoms within the intericosahedral chains, C-B-C→C-B-B. Once the carbon concentration is so low that the vast majority of the chains are C-B-B chains, near B/sub 13/C 2 , subsequent substitutions of carbon atoms with boron atoms occur within the icosahedra, B/sub 11/C→B/sub 12/. Maxima of the free energy occur at the most ordered compositions: B 4 C,B/sub 13/C 2 ,B/sub 14/C. This structural model, determined by studying the free energy, agrees with that previously suggested by analysis of electronic and thermal transport data. These considerations also provide an explanation for the wide single-phase regime found for boron carbides

  1. Boron removal by electrocoagulation and recovery.

    Science.gov (United States)

    Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

    2014-03-15

    This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water. Copyright © 2013 Elsevier Ltd. All rights reserved.

  2. Enrichment of boron 10

    International Nuclear Information System (INIS)

    Coutinho, C.M.M.; Rodrigues Filho, J.S.R.; Umeda, K.; Echternacht, M.V.

    1990-01-01

    A isotopic separation pilot plant with five ion exchange columns interconnected in series were designed and built in the IEN. The columns are charged with a strong anionic resin in its alkaline form. The boric acid solution is introduced in the separation columns until it reaches a absorbing zone length which is sufficient to obtain the desired boron-10 isotopic concentration. The boric acid absorbing zone movement is provided by the injection of a diluted hydrochloric acid solution, which replace the boric acid throughout the columns. The absorbing zone equilibrium length is proportional to its total length. The enriched boron-10 and the depleted boron are located in the final boundary and in the initial position of the absorbing zones, respectively. (author)

  3. GC-MS analysis of ethanol solution with D2O as solvent implanted by low energy N+

    International Nuclear Information System (INIS)

    Shi Huaibin; Shao Chunlin; Yu Zengliang

    2001-10-01

    Low energy ions were produced by N 2 glow-discharge. The positive ones were accelerated into ethanol solution with D 2 O as solvent to induce chemical reactions. GC-MS analysis showed that DCH 2 CH 2 OH, HOCH 2 CH 2 OD were produced by such kind of implantation. Thus, it was proved that the reaction was mainly caused by radicals generated by decomposition of water molecules, D . and . OD played an important role in the process. Meanwhile, CH 3 COOD and HOCH 2 CH 2 ND 2 were also found in the products, so it was concluded that the reaction was carried out under an oxidative atmosphere, which was thought to be probably related to . OD radicals, too. The capture of D from D 2 O by N + to form . ND 2 radicals was not only an initial step to produce HOCH 2 CH 2 ND 2 but also served as a probable pattern for 'nitrogen deposition'. All these were helpful to reveal the mechanism of the reaction induced by low energy N + implanting into solution samples

  4. Thermoelectric properties of boron and boron phosphide CVD wafers

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

    1997-10-01

    Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

  5. High energy metal ion implantation using 'Magis', a novel, broad-beam, Marx-generator-based ion source

    International Nuclear Information System (INIS)

    Anders, A.; Brown, I.G.; Dickinson, M.R.; MacGill, R.A.

    1996-08-01

    Ion energy of the beam formed by an ion source is proportional to extractor voltage and ion charge state. Increasing the voltage is difficult and costly for extraction voltage over 100 kV. Here we explore the possibility of increasing the charge states of metal ions to facilitate high-energy, broad beam ion implantation at a moderate voltage level. Strategies to enhance the ion charge state include operating in the regimes of high-current vacuum sparks and short pulses. Using a time-of-flight technique we have measured charge states as high as 7+ (73 kA vacuum spark discharge) and 4+ (14 kA short pulse arc discharge), both for copper, with the mean ion charge states about 6.0 and 2.5, respectively. Pulsed discharges can conveniently be driven by a modified Marx generator, allowing operation of ''Magis'' with a single power supply (at ground potential) for both plasma production and ion extraction

  6. Ion beam studies. Part 1. The retardation of ion beams to very low energies in an implantation accelerator

    International Nuclear Information System (INIS)

    Freeman, J.H.; Temple, W.; Beanland, D.; Gard, G.A.

    1976-02-01

    The design and operation of a compact electrostatic lens for the retardation and focussing of high intensity beams of heavy ions down to energies in the range 10 to 1,000 eV is described. The use of such beams for low-energy ion implantation and for the production of uniform ion-deposited layers is outlined. The practical behaviour of the lens is shown to be in agreement with computer calculations and the theoretical model is used to delineate and explain the boundary conditions under which the focussing behaviour becomes anomalous. The calculated and measured effects of space-charge repulsion on the quality of focussing are compared and it is demonstrated that a simple retardation lens design can be effectively employed at high flux. (author)

  7. Dietary boron does not affect tooth strength, micro-hardness, and density, but affects tooth mineral composition and alveolar bone mineral density in rabbits fed a high-energy diet.

    Science.gov (United States)

    Hakki, Sema S; SiddikMalkoc; Dundar, Niyazi; Kayis, Seyit Ali; Hakki, Erdogan E; Hamurcu, Mehmet; Baspinar, Nuri; Basoglu, Abdullah; Nielsen, Forrest H; Götz, Werner

    2015-01-01

    The objective of this study was to determine whether dietary boron (B) affects the strength, density and mineral composition of teeth and mineral density of alveolar bone in rabbits with apparent obesity induced by a high-energy diet. Sixty female, 8-month-old, New Zealand rabbits were randomly assigned for 7 months into five groups as follows: (1) control 1, fed alfalfa hay only (5.91 MJ/kg and 57.5 mg B/kg); (2) control 2, high energy diet (11.76 MJ and 3.88 mg B/kg); (3) B10, high energy diet + 10 mg B gavage/kg body weight/96 h; (4) B30, high energy diet + 30 mg B gavage/kg body weight/96 h; (5) B50, high energy diet + 50 mg B gavage/kg body weight/96 h. Maxillary incisor teeth of the rabbits were evaluated for compression strength, mineral composition, and micro-hardness. Enamel, dentin, cementum and pulp tissue were examined histologically. Mineral densities of the incisor teeth and surrounding alveolar bone were determined by using micro-CT. When compared to controls, the different boron treatments did not significantly affect compression strength, and micro-hardness of the teeth, although the B content of teeth increased in a dose-dependent manner. Compared to control 1, B50 teeth had decreased phosphorus (P) concentrations. Histological examination revealed that teeth structure (shape and thickness of the enamel, dentin, cementum and pulp) was similar in the B-treated and control rabbits. Micro CT evaluation revealed greater alveolar bone mineral density in B10 and B30 groups than in controls. Alveolar bone density of the B50 group was not different than the controls. Although the B treatments did not affect teeth structure, strength, mineral density and micro-hardness, increasing B intake altered the mineral composition of teeth, and, in moderate amounts, had beneficial effects on surrounding alveolar bone.

  8. SU-F-T-126: Microdosimetic Evaluation of Proton Energy Distributions in the Vicinity of Metal Implants

    Energy Technology Data Exchange (ETDEWEB)

    Heczko, S; McAuley, GA; Slater, JM [Loma Linda University, Loma Linda, CA (United States); Wroe, A [Loma Linda University, Loma Linda, CA (United States); Loma Linda University Medical Center, Loma Linda, CA (United States)

    2016-06-15

    Purpose: To evaluate the impact of titanium and surgical stainless steel implants on the microscopic dose distribution in proton treatment plans Methods: Geant4 Monte Carlo simulations were used to analyze the microdosimetric distribution of proton radiation in the vicinity of 3.1 mm thick CP Grade 4 titanium (Ti) or 316 stainless steel (SS316) plates in a water phantom. Additional simulations were performed using either water, or water with a density equivalent to the respective metals (Tiwater, SS316water) (to reflect common practice in treatment planning). Implants were placed at the COM of SOBPs of 157 MeV (range of ∼15 cm in water) protons with 30 or 60 mm modulation. Primary and secondary particle dose and fluence, frequency-weighted and dose-weighted average lineal energy, average radiation quality factor, dose equivalent and energy deposition histograms in the plate vicinity were compared. Results: Preliminary results show frequency-weighted (yf) and dose-weighted lineal energy (yd) was increased downstream of the Ti plate (yf = 3.1 keV/µm; yd = 5.5 keV/µm) and Tiwater (yf = 4.1 keV/µm; yd = 6.8 keV/µm) compared to that of water (ie, the absence of a plate) (yf = 2.5 keV/µm; yd = 4.5 keV/µm). In addition, downstream proton dose deposition was also elevated due to the presence of the Ti plate or Tiwater. The additional dose deposited at higher lineal energy implies that tissues downstream of the plate will receive a higher dose equivalent. Detailed analyses of the Ti, Tiwater, SS316, and SS316 water simulations will be presented. Conclusion: The presence of high-density materials introduces changes in the spatial distribution of radiation in the vicinity of an implant. Further work quantifying these effects could be incorporated into future treatment planning systems resulting in more accurate treatment plans. This project was sponsored with funding from the Department of Defense (DOD # W81XWH-10-2-0192).

  9. SU-F-T-126: Microdosimetic Evaluation of Proton Energy Distributions in the Vicinity of Metal Implants

    International Nuclear Information System (INIS)

    Heczko, S; McAuley, GA; Slater, JM; Wroe, A

    2016-01-01

    Purpose: To evaluate the impact of titanium and surgical stainless steel implants on the microscopic dose distribution in proton treatment plans Methods: Geant4 Monte Carlo simulations were used to analyze the microdosimetric distribution of proton radiation in the vicinity of 3.1 mm thick CP Grade 4 titanium (Ti) or 316 stainless steel (SS316) plates in a water phantom. Additional simulations were performed using either water, or water with a density equivalent to the respective metals (Tiwater, SS316water) (to reflect common practice in treatment planning). Implants were placed at the COM of SOBPs of 157 MeV (range of ∼15 cm in water) protons with 30 or 60 mm modulation. Primary and secondary particle dose and fluence, frequency-weighted and dose-weighted average lineal energy, average radiation quality factor, dose equivalent and energy deposition histograms in the plate vicinity were compared. Results: Preliminary results show frequency-weighted (yf) and dose-weighted lineal energy (yd) was increased downstream of the Ti plate (yf = 3.1 keV/µm; yd = 5.5 keV/µm) and Tiwater (yf = 4.1 keV/µm; yd = 6.8 keV/µm) compared to that of water (ie, the absence of a plate) (yf = 2.5 keV/µm; yd = 4.5 keV/µm). In addition, downstream proton dose deposition was also elevated due to the presence of the Ti plate or Tiwater. The additional dose deposited at higher lineal energy implies that tissues downstream of the plate will receive a higher dose equivalent. Detailed analyses of the Ti, Tiwater, SS316, and SS316 water simulations will be presented. Conclusion: The presence of high-density materials introduces changes in the spatial distribution of radiation in the vicinity of an implant. Further work quantifying these effects could be incorporated into future treatment planning systems resulting in more accurate treatment plans. This project was sponsored with funding from the Department of Defense (DOD # W81XWH-10-2-0192).

  10. Radiation blistering of Nb implanted sequentially with helium ions of different energies (3-500 keV)

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Krasulin, U.L.; Martinenko, U.V.; Das, S.K.; Kaminsky, M.S.

    1976-01-01

    Cold rolled, polycrystalline niobium samples were irradiated at room temperature with 4 He + ions sequentially at 14 different energies over an energy range from 3 keV--500 keV in steps of 50 keV. The dose for each energy was chosen to give an approximately uniform concentration of helium between the implant depths corresponding to 3 keV and 500 keV. In one set of experiments the irradiations were started at the Kurchatov Institute with 3 keV 4 He + ions and extended up to 80 keV in several steps. Subsequently, the same target area was irradiated with 4 He + ions at Argonne National Laboratory (ANL) starting at 100 keV and increased to 500 keV in steps of 50 keV. Another set of irradiations were started at ANL with 500 keV 4 He + ions and continued with decreasing ion energies to 100 keV. Subsequently, the same area was irradiated at the Kurchatov Institute starting at 80 keV and continued with decreasing ion energies to 3 keV. Both sets of irradiations were completed for two different total doses, 0.5 C cm -2 and 1.0 C cm -2

  11. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

    International Nuclear Information System (INIS)

    Camillo-Castillo, R.A.; Law, M.E.; Jones, K.S.

    2004-01-01

    As the industry continues to aggressively scale CMOS technology, the shift to lower energy ion implantation becomes essential. The consequent shallower amorphous layers result in dopant profiles that are in closer proximity to the end of range (EOR) damage and therefore a better understanding of the interaction between the dopant atoms and the EOR is required. A study is conducted on the influence of dopant profiles on the behavior of the EOR defects. Czochralski-grown silicon wafers are preamorphized with 1 x 10 15 cm -2 , 10 keV Ge + ions and subsequently implanted with 1 x 10 15 cm -2 , 1 keV B + ions. A sequence of rapid thermal and furnace anneals are performed at 750 deg. C under a nitrogen ambient for periods of 1 s up to 6 h. Plan view transmission electron microscopy (PTEM) reveals a significant difference in the defect evolution for samples with and without boron, suggesting that the boron influences the evolution of the EOR defects. The extended defects observed for samples which contain boron appear as dot-like defects which are unstable and dissolve after very short anneal times. The defect evolution however, in samples without boron follows an Oswald ripening behavior and form {3 1 1}-type defects and dislocation loops. Hall effect measurements denote a high initial activation and subsequent deactivation of the dopant atoms which is characteristic of the formation of boron interstitial clusters. Diffusion analyses via secondary ion mass spectroscopy (SIMS) support this theory

  12. Chemical erosion of sintered boron carbide due to H+ impact

    International Nuclear Information System (INIS)

    Davis, J.W.; Haasz, A.A.

    1990-06-01

    The production of hydrocarbons and boron hydrides due to H + bombardment of sintered B 4 C has been investigated as a function of sample temperature and incident ion energy. While hydrocarbon production was observed, the yields were approximately two orders of magnitude smaller than observed for graphite. There was no evidence to indicate the production of any volatile boron-containing compounds. (3 figs., 11 refs.)

  13. X-ray diffraction patterns in high-energy proton implanted silicon

    International Nuclear Information System (INIS)

    Wieteska, K.; Dluzewska, K.D.; Wierzchowski, W.; Graeff, W.

    1998-01-01

    Silicon crystals implanted with 1 and 1.6 MeV protons were studied by means of conventional source double-crystal and synchrotron multi-crystal arrangements. Both the rocking curves and series of topographs were recorded in different parallel settings employing different reflections and wavelengths of radiation. A comparison of rocking curves in different regions of implanted areas was performed in synchrotron multi-crystal arrangement with a beam of a very small diameter. The rocking curves exhibited subsidiary interference maxima with increasing periodicity on the low angle side. The plane wave topographs taken at different angular setting revealed characteristic fringes whose number decreased with increasing distance from the main maximum. The fringe pattern did not depend on the direction of the diffraction vector. The number of fringes for equivalent angular distance from the maximum was larger for higher order of reflection. The shape of the rocking curve and other diffraction patterns were reasonably explained assuming the lattice parameter change depth distribution proportional to the profile obtained from the Biersack-Ziegler theory and lateral non-uniformity of ion dose. A good approximation of the experimental results was obtained using numerical integration of the Takagi-Taupin equations. (orig.)

  14. A preferential design approach for energy-efficient and robust implantable neural signal processing hardware.

    Science.gov (United States)

    Narasimhan, Seetharam; Chiel, Hillel J; Bhunia, Swarup

    2009-01-01

    For implantable neural interface applications, it is important to compress data and analyze spike patterns across multiple channels in real time. Such a computational task for online neural data processing requires an innovative circuit-architecture level design approach for low-power, robust and area-efficient hardware implementation. Conventional microprocessor or Digital Signal Processing (DSP) chips would dissipate too much power and are too large in size for an implantable system. In this paper, we propose a novel hardware design approach, referred to as "Preferential Design" that exploits the nature of the neural signal processing algorithm to achieve a low-voltage, robust and area-efficient implementation using nanoscale process technology. The basic idea is to isolate the critical components with respect to system performance and design them more conservatively compared to the noncritical ones. This allows aggressive voltage scaling for low power operation while ensuring robustness and area efficiency. We have applied the proposed approach to a neural signal processing algorithm using the Discrete Wavelet Transform (DWT) and observed significant improvement in power and robustness over conventional design.

  15. Metallic artefact reduction with monoenergetic dual-energy CT: systematic ex vivo evaluation of posterior spinal fusion implants from various vendors and different spine levels.

    Science.gov (United States)

    Guggenberger, R; Winklhofer, S; Osterhoff, G; Wanner, G A; Fortunati, M; Andreisek, G; Alkadhi, H; Stolzmann, P

    2012-11-01

    To evaluate optimal monoenergetic dual-energy computed tomography (DECT) settings for artefact reduction of posterior spinal fusion implants of various vendors and spine levels. Posterior spinal fusion implants of five vendors for cervical, thoracic and lumbar spine were examined ex vivo with single-energy (SE) CT (120 kVp) and DECT (140/100 kVp). Extrapolated monoenergetic DECT images at 64, 69, 88, 105 keV and individually adjusted monoenergy for optimised image quality (OPTkeV) were generated. Two independent radiologists assessed quantitative and qualitative image parameters for each device and spine level. Inter-reader agreements of quantitative and qualitative parameters were high (ICC = 0.81-1.00, κ = 0.54-0.77). HU values of spinal fusion implants were significantly different among vendors (P metallic artefacts from implants than SECT. Use of individual keV values for vendor and spine level is recommended. • Artefacts pose problems for CT following posterior spinal fusion implants. • CT images are interpreted better with monoenergetic extrapolation using dual-energy (DE) CT. • DECT extrapolation improves image quality and reduces metallic artefacts over SECT. • There were considerable differences in monoenergy values among vendors and spine levels. • Use of individualised monoenergy values is indicated for different metallic hardware devices.

  16. Hydrolytic Stability of Boronate Ester-Linked Covalent Organic Frameworks

    KAUST Repository

    Li, Huifang

    2018-01-30

    The stability of covalent organic frameworks (COFs) is essential to their applications. However, the common boronate ester-linked COFs are susceptible to attack by nucleophiles (such as water molecules) at the electron-deficient boron sites. To provide an understanding of the hydrolytic stability of the representative boronate ester-linked COF-5 and of the associated hydrolysis mechanisms, density functional theory (DFT) calculations were performed to characterize the hydrolysis reactions of the molecule formed by the condensation of 1,4-phenylenebis(boronic acid) (PBBA) and 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) monomers; two cases were considered, one dealing with the freestanding molecule and the other with the molecule interacting with COF layers. It was found that the boronate ester (B–O) bond dissociation, which requires one H2O molecule, has a relatively high energy barrier of 22.3 kcal mol−1. However, the presence of an additional H2O molecule significantly accelerates hydrolysis by reducing the energy barrier by a factor of 3. Importantly, the hydrolysis of boronate ester bonds situated in a COF environment follows reaction pathways that are different and have increased energy barriers. These results point to an enhanced hydrolytic stability of COF-5 crystals.

  17. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  18. Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

    International Nuclear Information System (INIS)

    Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

    2010-01-01

    Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

  19. Surface mechanical attrition treatment of tungsten and its behavior under low energy deuterium plasma implantation relevant to ITER divertor conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, H.Y.; Yuan, Y.; Fu, B.Q.; Godfrey, A.; Liu, W. [Tsinghua Univ.. Lab. of Advanced Materials, Beijing (China); Zhang, Y.B. [Technical Univ. og Denmark. DTU Risoe Campus, Roskilde (Denmark); Tao, N.R. [Chinese Academy of Sciences, Shenyang (China)

    2012-11-01

    In the light of a foreseen application for tungsten (W) as an ITER divertor material samples have been plastically deformed by a surface mechanical attrition treatment (SMAT) and by cold rolling. The resistance to blister formation by low energy deuterium implantation in these samples has been examined, with the result that the structure is significantly improved as the structural scale is reduced to the nanometer range in the SMAT sample. The distribution of blisters in this sample is however bimodal, due to the formation of several very large blisters, which are heterogeneously distributed. The observations suggest that process optimization must be a next step in the development with a view to the application of plastically deformed W in a fusion reactor. (Author)

  20. Performances of low-dose dual-energy CT in reducing artifacts from implanted metallic orthopedic devices

    Energy Technology Data Exchange (ETDEWEB)

    Filograna, Laura [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Institute of Radiology, Rome (Italy); University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland); Magarelli, Nicola; Leone, Antonio; Bonomo, Lorenzo [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Department of Radiological Sciences, Institute of Radiology, Rome (Italy); De Waure, Chiara; Calabro, Giovanna Elisa [Catholic University of Rome, School of Medicine, University Hospital ' ' A. Gemelli' ' , Research Centre for Health Technology Assessment, Department of Public Health, Section of Hygiene, Rome (Italy); Finkenstaedt, Tim [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Thali, Michael John [University of Zurich, Department of Forensic Medicine and Imaging, Institute of Forensic Medicine, Zurich (Switzerland)

    2016-07-15

    The objective was to evaluate the performances of dose-reduced dual-energy computed tomography (DECT) in decreasing metallic artifacts from orthopedic devices compared with dose-neutral DECT, dose-neutral single-energy computed tomography (SECT), and dose-reduced SECT. Thirty implants in 20 consecutive cadavers underwent both SECT and DECT at three fixed CT dose indexes (CTDI): 20.0, 10.0, and 5.0 mGy. Extrapolated monoenergetic DECT images at 64, 69, 88, 105, 120, and 130 keV, and individually adjusted monoenergy for optimized image quality (OPTkeV) were generated. In each group, the image quality of the seven monoenergetic images and of the SECT image was assessed qualitatively and quantitatively by visually rating and by measuring the maximum streak artifact respectively. The comparison between SECT and OPTkeV evaluated overall within all groups showed a significant difference (p <0.001), with OPTkeV images providing better images. Comparing OPTkeV with the other DECT images, a significant difference was shown (p <0.001), with OPTkeV and 130-keV images providing the qualitatively best results. The OPTkeV images of 5.0-mGy acquisitions provided percentages of images with scores 1 and 2 of 36 % and 30 % respectively, compared with 0 % and 33.3 % of the corresponding SECT images of 10- and 20-mGy acquisitions. Moreover, DECT reconstructions at the OPTkeV of the low-dose group showed higher CT numbers than the SECT images of dose groups 1 and 2. This study demonstrates that low-dose DECT permits a reduction of artifacts due to metallic implants to be obtained in a similar manner to neutral-dose DECT and better than reduced or neutral-dose SECT. (orig.)

  1. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

    1985-01-01

    Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

  2. Ion implantation

    International Nuclear Information System (INIS)

    Dearnaley, Geoffrey

    1975-01-01

    First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

  3. Interaction of boron with graphite: A van der Waals density functional study

    International Nuclear Information System (INIS)

    Liu, Juan; Wang, Chen; Liang, Tongxiang; Lai, Wensheng

    2016-01-01

    Highlights: • A van der Waals density-functional approach is applied to study the interaction of boron with graphite. • VdW-DF functionals give fair agreement of crystal parameters with experiments. • The π electron approaches boron while adsorbing on graphite surface. • The hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. • PBE cannot describe the interstitial boron in graphite because of the ignoring binding of graphite sheets. - Abstract: Boron doping has been widely investigated to improve oxidation resistance of graphite. In this work the interaction of boron with graphite is investigated by a van der Waals density-functional approach (vdW-DF). The traditional density-functional theory (DFT) is well accounted for the binding in boron-substituted graphite. However, to investigate the boron atom on graphite surface and the interstitial impurities require use of a description of graphite interlayer binding. Traditional DFT cannot describe the vdW physics, for instance, GGA calculations show no relevant binding between graphite sheets. LDA shows some binding, but they fail to provide an accurate account of vdW forces. In this paper, we compare the calculation results of graphite lattice constant and cohesive energy by several functionals, it shows that vdW-DF such as two optimized functionals optB88-vdW and optB86b-vdW give much improved results than traditional DFT. The vdW-DF approach is then applied to study the interaction of boron with graphite. Boron adsorption, substitution, and intercalation are discussed in terms of structural parameters and electronic structures. When adsorbing on graphite surface, boron behaves as π electron acceptor. The π electron approaches boron atom because of more electropositive of boron than carbon. For substitution situation, the hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. The B-doped graphite system with the hole has less

  4. Interaction of boron with graphite: A van der Waals density functional study

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Juan; Wang, Chen [Beijing Key Lab of Fine Ceramics, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang, E-mail: txliang@tsinghua.edu.cn [State Key Lab of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing, 100084 (China)

    2016-08-30

    Highlights: • A van der Waals density-functional approach is applied to study the interaction of boron with graphite. • VdW-DF functionals give fair agreement of crystal parameters with experiments. • The π electron approaches boron while adsorbing on graphite surface. • The hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. • PBE cannot describe the interstitial boron in graphite because of the ignoring binding of graphite sheets. - Abstract: Boron doping has been widely investigated to improve oxidation resistance of graphite. In this work the interaction of boron with graphite is investigated by a van der Waals density-functional approach (vdW-DF). The traditional density-functional theory (DFT) is well accounted for the binding in boron-substituted graphite. However, to investigate the boron atom on graphite surface and the interstitial impurities require use of a description of graphite interlayer binding. Traditional DFT cannot describe the vdW physics, for instance, GGA calculations show no relevant binding between graphite sheets. LDA shows some binding, but they fail to provide an accurate account of vdW forces. In this paper, we compare the calculation results of graphite lattice constant and cohesive energy by several functionals, it shows that vdW-DF such as two optimized functionals optB88-vdW and optB86b-vdW give much improved results than traditional DFT. The vdW-DF approach is then applied to study the interaction of boron with graphite. Boron adsorption, substitution, and intercalation are discussed in terms of structural parameters and electronic structures. When adsorbing on graphite surface, boron behaves as π electron acceptor. The π electron approaches boron atom because of more electropositive of boron than carbon. For substitution situation, the hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. The B-doped graphite system with the hole has less

  5. COREL, Ion Implantation in Solids, Range, Straggling Using Thomas-Fermi Cross-Sections. RASE4, Ion Implantation in Solids, Range, Straggling, Energy Deposition, Recoils. DAMG2, Ion Implantation in Solids, Energy Deposition Distribution with Recoils

    International Nuclear Information System (INIS)

    Brice, D. K.

    1979-01-01

    1 - Description of problem or function: COREL calculates the final average projected range, standard deviation in projected range, standard deviation in locations transverse to projected range, and average range along path for energetic atomic projectiles incident on amorphous targets or crystalline targets oriented such that the projectiles are not incident along low index crystallographic axes or planes. RASE4 calculates the instantaneous average projected range, standard deviation in projected range, standard deviation in locations transverse to projected range, and average range along path for energetic atomic projectiles incident on amorphous targets or crystalline targets oriented such that the projectiles are not incident along low index crystallographic axes or planes. RASE4 also calculates the instantaneous rate at which the projectile is depositing energy into atomic processes (damage) and into electronic processes (electronic excitation), the average range of target atom recoils projected onto the direction of motion of the projectiles, and the standard deviation in the recoil projected range. DAMG2 calculates the distribution in depth of the energy deposited into atomic processes (damage), electronic processes (electronic excitation), or other energy-dependent quality produced by energetic atomic projectiles incident on amorphous targets or crystalline targets oriented such that the projectiles are not incident along low index crystallographic axes or planes. 2 - Method of solution: COREL: The truncated differential equation which governs the several variables being sought is solved through second-order by trapezoidal integration. The energy-dependent coefficients in the equation are obtained by rectangular integration over the Thomas-Fermi elastic scattering cross section. RASE4: The truncated differential equation which governs the range and straggling variables is solved through second-order by trapezoidal integration. The energy

  6. Continuum modelling for carbon and boron nitride nanostructures

    International Nuclear Information System (INIS)

    Thamwattana, Ngamta; Hill, James M

    2007-01-01

    Continuum based models are presented here for certain boron nitride and carbon nanostructures. In particular, certain fullerene interactions, C 60 -C 60 , B 36 N 36 -B 36 N 36 and C 60 -B 36 N 36 , and fullerene-nanotube oscillator interactions, C 60 -boron nitride nanotube, C 60 -carbon nanotube, B 36 N 36 -boron nitride nanotube and B 36 N 36 -carbon nanotube, are studied using the Lennard-Jones potential and the continuum approach, which assumes a uniform distribution of atoms on the surface of each molecule. Issues regarding the encapsulation of a fullerene into a nanotube are also addressed, including acceptance and suction energies of the fullerenes, preferred position of the fullerenes inside the nanotube and the gigahertz frequency oscillation of the inner molecule inside the outer nanotube. Our primary purpose here is to extend a number of established results for carbon to the boron nitride nanostructures

  7. A New Boron Analysis Method

    Energy Technology Data Exchange (ETDEWEB)

    Weitman, J; Daaverhoeg, N; Farvolden, S

    1970-07-01

    In connection with fast neutron (n, {alpha}) cross section measurements a novel boron analysis method has been developed. The boron concentration is inferred from the mass spectrometrically determined number of helium atoms produced in the thermal and epithermal B-10 (n, {alpha}) reaction. The relation between helium amount and boron concentration is given, including corrections for self shielding effects and background levels. Direct and diffusion losses of helium are calculated and losses due to gettering, adsorption and HF-ionization in the release stage are discussed. A series of boron determinations is described and the results are compared with those obtained by other methods, showing excellent agreement. The lower limit of boron concentration which can be measured varies with type of sample. In e.g. steel, concentrations below 10-5 % boron in samples of 0.1-1 gram may be determined.

  8. A Study of Mutation Breeding of High-Yielding Tryptophanase Escherichia coli by Low-Energy N+ Ion Beam Implantation

    International Nuclear Information System (INIS)

    Pang Min; Yao Jianming; Wang Dongmei

    2009-01-01

    Low energy ion beam has been widely applied in microbe breeding, plant breeding, gene transfer and cell modification. In this study, the Escherichia coli (E.coli) strain producing tryptophanase was irradiated by a low energy nitrogen ion beam with an energy of 10 keV at a fluence of 13 x 10 14 N + /cm 2 when glycerin at a 15% concentration was used as a protector. The effect on the biomass of E. coli after N + implantation was analyzed in detail by statistic methods. The screening methods used in this study were proven to be effective. After continuous mutagenicity, a high-yield tryptophanase strain was selected and both its biomass and enzymatic activity were higher than those of the parent strain. The results of scale-up production showed that the biomass could reach wet weight 8.2 g/L and 110 g L-tryptophan could be formed in the volume of the 1l enzymatic reaction system.

  9. The implantation of a PV electric energy generation system at the Saint Peter and Saint Paul islands

    Energy Technology Data Exchange (ETDEWEB)

    Galdino, Marco Antonio; Silva, Patricia de Castro da [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil)], E-mail: marcoag@cepel.br; Souza, Marco Antonio Carvalho [Secretaria da Comissao Interministerial para os Recursos do Mar (SECIRM), Brasilia, DF (Brazil)

    2009-07-01

    The Saint Peter and Saint Paul Islands are located at 0 degree 55.00' N and 29 degree 20.76'' W, at a distance of circa 550 M (nautical miles) NE from the City of Natal, RN (Northeast Region of Brazil), and comprises of many small islands and rocks of igneous plutonic origin. In 1998, a first Scientific Station was built in order to receive researchers involved in several projects. The CEPEL, as responsible by the electrical energy supply to the Scientific Station; designed and installed a PV electric energy generation system which had a power of 3.6 kWp. This system operated successfully for the last 10 years, suffering frequent maintenance. In 2006, a new design for the Scientific Station has been started aiming to improve its resources and safety. The new PV system has a maximum power of 7.8 kWp, and employs an updated technology (SMA, Germany). The equipment was integrated and submitted to intensive testing at facilities of CEPEL, and was installed and commissioned at the Islands in June 2008. Since the installation, the equipment has been operating as required, meeting the energy and water demand of the Station. The present paper describes the many steps involved in the implantation of the PV system at the Scientific Station. (author)

  10. Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

    Energy Technology Data Exchange (ETDEWEB)

    Friedland, E., E-mail: erich.friedland@up.ac.za

    2017-01-15

    At ion energies with inelastic stopping powers less than a few keV/nm, radiation damage is thought to be due to atomic displacements by elastic collisions only. However, it is well known that inelastic processes and non-linear effects due to defect interaction within collision cascades can significantly increase or decrease damage efficiencies. The importance of these processes changes significantly along the ion trajectory and becomes negligible at some distance beyond the projected range, where damage is mainly caused by slowly moving secondary recoils. Hence, in this region amorphization energies should become independent of the ion type and only reflect the properties of the target lattice. To investigate this, damage profiles were obtained from α-particle channeling spectra of 6H-SiC wafers implanted at room temperature with ions in the mass range 84 ⩽ M ⩽ 133, employing the computer code DICADA. An average amorphization dose of (0.7 ± 0.2) dpa and critical damage energy of (17 ± 6) eV/atom are obtained from TRIM simulations at the experimentally observed boundary positions of the amorphous zones.

  11. Ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Gusev, V.; Gusevova, M.

    1980-01-01

    The historical development is described of the method of ion implantation, the physical research of the method, its technological solution and practical uses. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material, ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions. (M.S.)

  12. Ion implantation in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, V; Gusevova, M

    1980-06-01

    The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.

  13. Implanting very low energy atomic ions into surface adsorbed cage molecules: the formation/emission of Cs/C60+

    International Nuclear Information System (INIS)

    Kolodney, Eli; Kaplan, Andrey; Manor, Yoni; Bekkerman, Anatoly; Tsipinyuk, Boris

    2004-01-01

    Full Text: We demonstrate the formation of an endo-complex via a collision of energetic ions with molecular overlayers on a surface. An incoming atomic ion is encapsulated inside a very large molecule or cluster by implanting the primary ion into the target species, which then recovers its original structure or rearrange itself around the implanted ion in some stable configuration. Here we describe an experiment resulting in the formation and ejection of an endo-complex, within a single collision. We study the formation and emission of endohedral fullerenes, Cs/C 60 + and Cs/C 70 + , following a single collision of Cs + ion with a sub-monolayer of C 60 (steady state coverage) on gold and silicon surfaces and with a sub-monolayer of C 70 on gold. A continuous low energy (E 0 =35-220 eV) Cs + ion beam hit the Cs + covered surface and the collisional formation and ejection of the endohedral Cs/Cs 60 + complex, within a single Cs + /C 60 collision was observed and characterized. Several experimental observations clearly demonstrate the single collision nature of the combined atom penetration endo-complex ejection event. The fullerene molecule is actually being picked up off the surface by the penetrating Cs + ion. The evidence for the trapping of the Cs + ion inside the fullerene cage is given both by the appearance of the Cs/Cs (602-2n) + (n=1-5) sequence and its termination at Cs/Cs 50 + . Kinetic Energy Distributions (KEDs) of the outgoing Cs/Cs 60 + were measured for two different Cs + impact energies under field-free conditions. The most striking observation is the near independence of the KEDs on the impact energy. Both KEDs peak around 1.2 eV with similar line shapes. A simple model for the formation/ejection/fragmentation dynamics of the endohedral complex is proposed and is found to be in good agreement with the experimental results

  14. A critical assessment of boron target compounds for boron neutron capture therapy.

    Science.gov (United States)

    Hawthorne, M Frederick; Lee, Mark W

    2003-01-01

    Boron neutron capture therapy (BNCT) has undergone dramatic developments since its inception by Locher in 1936 and the development of nuclear energy during World War II. The ensuing Cold War spawned the entirely new field of polyhedral borane chemistry, rapid advances in nuclear reactor technology and a corresponding increase in the number to reactors potentially available for BNCT. This effort has been largely oriented toward the eradication of glioblastoma multiforme (GBM) and melanoma with reduced interest in other types of malignancies. The design and synthesis of boron-10 target compounds needed for BNCT was not channeled to those types of compounds specifically required for GBM or melanoma. Consequently, a number of potentially useful boron agents are known which have not been biologically evaluated beyond a cursory examination and only three boron-10 enriched target species are approved for human use following their Investigational New Drug classification by the US Food and Drug Administration; BSH, BPA and GB-10. All ongoing clinical trials with GBM and melanoma are necessarily conducted with one of these three species and most often with BPA. The further development of BNCT is presently stalled by the absence of strong support for advanced compound evaluation and compound discovery driven by recent advances in biology and chemistry. A rigorous demonstration of BNCT efficacy surpassing that of currently available protocols has yet to be achieved. This article discusses the past history of compound development, contemporary problems such as compound classification and those problems which impede future advances. The latter include means for biological evaluation of new (and existing) boron target candidates at all stages of their development and the large-scale synthesis of boron target species for clinical trials and beyond. The future of BNCT is bright if latitude is given to the choice of clinical disease to be treated and if a recognized study

  15. Low dose monitoring by double implant technique in IC fabrication

    International Nuclear Information System (INIS)

    Ahmad, I.B.; Weidemann, J.

    1995-01-01

    The utilisation of low dose implant monitoring (using Boron) in a manufacturing line has been discussed. The utilisation of phosphorus ions as the second implant dose were also studied as comparison. The technique relies on the fact that the sheet resistant of doped layer will increase significantly when damaged by relatively low implant dose. The technique is very sensitive and applicable for adjusting the channel dose so that an accurate threshold voltage in MOS device could be achieved

  16. A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

    Science.gov (United States)

    Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

    2012-08-01

    We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

  17. Structural and compositional characterization of X-cut LiNbO3 crystals implanted with high energy oxygen and carbon ions

    International Nuclear Information System (INIS)

    Bentini, G.G.; Bianconi, M.; Cerutti, A.; Chiarini, M.; Pennestri, G.; Sada, C.; Argiolas, N.; Bazzan, M.; Mazzoldi, P.; Guzzi, R.

    2005-01-01

    High energy implantation of medium-light elements such as oxygen and carbon was performed in X-cut LiNbO 3 single crystals in order to prepare high quality optical waveguides. The compositional and damage profiles, obtained by exploiting the secondary ion mass spectrometry and Rutherford back-scattering techniques respectively, were correlated to the structural properties measured by the high resolution X-ray diffraction. This study evidences the development of tensile strain induced by the ion implantation that can contribute to the decrease of the ordinary refractive index variation through the photo-elastic effect

  18. Extended defects and hydrogen interactions in ion implanted silicon

    Science.gov (United States)

    Rangan, Sanjay

    The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

  19. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

  20. High-energy ion implantation of polymeric fibers for modification of reinforcement-matrix adhesion

    International Nuclear Information System (INIS)

    Grummon, D.S.; Schalek, R.; Ozzello, A.; Kalantar, J.; Drzal, L.T.

    1991-01-01

    We have previously reported on the effect of high-energy ion irradiation of ultrahigh molecular weight polyethylene (UHMW-PE), and Kevlar-49 polyaramid fibers, on fiber-matrix adhesion and interfacial shear strength (ISS) in epoxy matrix composites. Irradiation of UHMW-PE fibers produced large improvements in interfacial shear strength, without degrading fiber tensile strength. ISS was not generally affected in irradiated Kevlar-49, and fiber tensile strength decreased. The divergence in response between polyaramid and polyethylene relates both to differences in the mesoscopic structure of the individual fibers, and to the different forms of beam induced structural modification favored by the individual polymer chemistries. Here we report results of surface energy measurements, infrared spectroscopy analysis, and X-ray photoelectron spectroscopy studies on UHMW-PE and polyaramid fibers, irradiated to fluences between 2x10 12 and 5x10 15 cm -2 with N + , Ar + , Ti + , Na + , and He + at energies between 30 and 400 keV. UHMW-PE fibers showed a pronounced increase in the polar component of surface energy which could be associated with carbonyl, hydroxyl and hydroperoxide groups at the surface. Kevlar, on the other hand, tended toward carbonization and showed a decrease in nitrogen and oxygen concentrations and a sharp drop in polar surface energy. (orig.)

  1. Study on rice transformation mediated by low energy ion beam implantation

    International Nuclear Information System (INIS)

    Li Hong; Wu Lifang; Yu Zengliang

    2001-01-01

    Delivery of foreign DNA into rice via ion beam was first reported in 1994. In recent years we have aimed to set up efficient transformation system mediated by low energy ion beam. The factors that influence the transformation including type of ion, parameters of ion energy, dose and dose rate, plant genotype, composition of media, concentration of hormones and antibiotics were carefully investigated. Treated with 25ke V Ar + , the transformation efficiencies of the mature embryos of rice variety 02428, Hua pei94-jian-09 and Minghui63 reached 11%, 11.4% and 7.1% measured by produced antibiotic resistant callus and l.52%, 1.87% and l.13% measured by regenerated plants respectively. PCR detection and Southern blot analysis showed that GUS report gene had inserted in rice genome. Low energy ion beam mediated gene transfer will be extended to other cereal recalcitrant to Agrobacterium tumefaciens as soon as methodological parameters were optimized. (authors)

  2. Energy transmission and power sources for mechanical circulatory support devices to achieve total implantability.

    Science.gov (United States)

    Wang, Jake X; Smith, Joshua R; Bonde, Pramod

    2014-04-01

    Left ventricular assist device therapy has radically improved congestive heart failure survival with smaller rotary pumps. The driveline used to power today's left ventricular assist devices, however, continues to be a source of infection, traumatic damage, and rehospitalization. Previous attempts to wirelessly power left ventricular assist devices using transcutaneous energy transfer systems have been limited by restrictions on separation distance and alignment between the transmit and receive coils. Resonant electrical energy transfer allows power delivery at larger distances without compromising safety and efficiency. This review covers the efforts to wirelessly power mechanical circulatory assist devices and the progress made in enhancing their energy sources. Copyright © 2014 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

  3. Boron containing poly-(lactide-co-glycolide) (PLGA) scaffolds for bone tissue engineering

    Energy Technology Data Exchange (ETDEWEB)

    Doğan, Ayşegül; Demirci, Selami [Department of Genetics and Bioengineering, Faculty of Engineering and Architecture, Yeditepe University 34755 Istanbul (Turkey); Bayir, Yasin [Department of Biochemistry, Faculty of Pharmacy, Ataturk University, 25240, Erzurum (Turkey); Halici, Zekai [Department of Pharmacology, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Karakus, Emre [Department of Pharmacology and Toxicology, Faculty of Veterinary Medicine, Ataturk University, 25240, Erzurum (Turkey); Aydin, Ali [Department of Orthopedics and Traumatology, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Cadirci, Elif [Department of Pharmacology, Faculty of Pharmacy, Ataturk University, 25240, Erzurum (Turkey); Albayrak, Abdulmecit [Department of Pharmacology, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Demirci, Elif [Department of Pathology, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Karaman, Adem [Department of Radiology, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Ayan, Arif Kursat [Department of Nuclear Medicine, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Gundogdu, Cemal [Department of Pathology, Faculty of Medicine, Ataturk University, 25240, Erzurum (Turkey); Şahin, Fikrettin, E-mail: fsahin@yeditepe.edu.tr [Department of Genetics and Bioengineering, Faculty of Engineering and Architecture, Yeditepe University 34755 Istanbul (Turkey)

    2014-11-01

    Scaffold-based bone defect reconstructions still face many challenges due to their inadequate osteoinductive and osteoconductive properties. Various biocompatible and biodegradable scaffolds, combined with proper cell type and biochemical signal molecules, have attracted significant interest in hard tissue engineering approaches. In the present study, we have evaluated the effects of boron incorporation into poly-(lactide-co-glycolide-acid) (PLGA) scaffolds, with or without rat adipose-derived stem cells (rADSCs), on bone healing in vitro and in vivo. The results revealed that boron containing scaffolds increased in vitro proliferation, attachment and calcium mineralization of rADSCs. In addition, boron containing scaffold application resulted in increased bone regeneration by enhancing osteocalcin, VEGF and collagen type I protein levels in a femur defect model. Bone mineralization density (BMD) and computed tomography (CT) analysis proved that boron incorporated scaffold administration increased the healing rate of bone defects. Transplanting stem cells into boron containing scaffolds was found to further improve bone-related outcomes compared to control groups. Additional studies are highly warranted for the investigation of the mechanical properties of these scaffolds in order to address their potential use in clinics. The study proposes that boron serves as a promising innovative approach in manufacturing scaffold systems for functional bone tissue engineering. - Highlights: • Boron containing PLGA scaffolds were developed for bone tissue engineering. • Boron incorporation increased cell viability and mineralization of stem cells. • Boron containing scaffolds increased bone-related protein expression in vivo. • Implantation of stem cells on boron containing scaffolds improved bone healing.

  4. Boron containing poly-(lactide-co-glycolide) (PLGA) scaffolds for bone tissue engineering

    International Nuclear Information System (INIS)

    Doğan, Ayşegül; Demirci, Selami; Bayir, Yasin; Halici, Zekai; Karakus, Emre; Aydin, Ali; Cadirci, Elif; Albayrak, Abdulmecit; Demirci, Elif; Karaman, Adem; Ayan, Arif Kursat; Gundogdu, Cemal; Şahin, Fikrettin

    2014-01-01

    Scaffold-based bone defect reconstructions still face many challenges due to their inadequate osteoinductive and osteoconductive properties. Various biocompatible and biodegradable scaffolds, combined with proper cell type and biochemical signal molecules, have attracted significant interest in hard tissue engineering approaches. In the present study, we have evaluated the effects of boron incorporation into poly-(lactide-co-glycolide-acid) (PLGA) scaffolds, with or without rat adipose-derived stem cells (rADSCs), on bone healing in vitro and in vivo. The results revealed that boron containing scaffolds increased in vitro proliferation, attachment and calcium mineralization of rADSCs. In addition, boron containing scaffold application resulted in increased bone regeneration by enhancing osteocalcin, VEGF and collagen type I protein levels in a femur defect model. Bone mineralization density (BMD) and computed tomography (CT) analysis proved that boron incorporated scaffold administration increased the healing rate of bone defects. Transplanting stem cells into boron containing scaffolds was found to further improve bone-related outcomes compared to control groups. Additional studies are highly warranted for the investigation of the mechanical properties of these scaffolds in order to address their potential use in clinics. The study proposes that boron serves as a promising innovative approach in manufacturing scaffold systems for functional bone tissue engineering. - Highlights: • Boron containing PLGA scaffolds were developed for bone tissue engineering. • Boron incorporation increased cell viability and mineralization of stem cells. • Boron containing scaffolds increased bone-related protein expression in vivo. • Implantation of stem cells on boron containing scaffolds improved bone healing

  5. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.

    2013-04-01

    Boron removal in seawater desalination presents a particular challenge. In seawater reverse osmosis (SWRO) systems boron removal at low concentration (<0.5 mg/L) is usually achieved by a second pass using brackish water RO membranes. However, this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous solution was carried out by EC process using aluminum and iron electrodes. Several operating parameters on the removal efficiency such as initial pH, current density, initial boron ion concentration, feed concentration, gap between electrodes, and electrode material, were investigated. In the case of bipolar electrocoagulation (BEC), an optimum removal efficiency of 96% corresponding to a final boron concentration of 0.4 mg/L was achieved at a current density of 6 mA/cm2 and pH = 8 using aluminum electrodes. The concentration of NaCl was 2,500 mg/L and the gap between the electrodes of 0.5 cm. Furthermore, a comparison between monopolar electrocoagulation (MEC) and BEC using both aluminum and iron electrodes was carried out. Results showed that the BEC process has reduced the current density applied to obtain high level of boron removal in a short reaction time compared to MEC process. The high performance of the EC showed that the process could be used to reduce boron concentration to acceptable levels at low-cost and more environmentally friendly. © 2013 Copyright Taylor and Francis Group, LLC.

  6. Boron supplementation in broiler diets

    Directory of Open Access Journals (Sweden)

    EJ Fassani

    2004-12-01

    Full Text Available Boron supplementation in broiler feed is not a routine practice. However, some reports suggest a positive effect of boron on performance. This study assessed the effects of boron supplementation on broiler performance. Diets were based on maize and soybean meal, using boric acid P.A. as boron source. Six supplementation levels (0, 30, 60, 90, 120 and 150 ppm were evaluated using 1,440 one-day old males housed at a density of 30 chickens in each of 48 experimental plots of 3m². A completely randomized block design was used with 8 replicates. Feed intake, weight gain and feed conversion were assessed in the periods from 1 to 7 days, 1 to 21 days and 1 to 42 days of age, and viability was evaluated for the total 42-day rearing period. No performance variable was affected by boron supplementation (p>0.05 in the period from 1 to 7 days. The regression analysis indicated an ideal level of 37.4 ppm of boron for weight gain from 1 to 21 days (p0.05, although feed intake was reduced linearly with increased boron levels (p0.05. Ash and calcium percentages in the tibias of broilers and viability in the total rearing period were not affected by boron supplementation (p>0.05.

  7. The desorption behaviour of implanted noble gases at low energy on silicon surfaces

    NARCIS (Netherlands)

    Holtslag, A.H.M.; van Silfhout, Arend

    1987-01-01

    Under UHV conditions, clean crystalline Si(111) surfaces have been bombarded mass-selectively at room temperature with noble gas ions, Ne+, Ar+, Kr+, at normal incidence. By means of stepwise heating up to 1050 K the activation energies and desorbed doses of the noble gases have been straight

  8. Investigation of Deuterium Implantation into Beryllium Sample by Electron Energy Loss Spectroscopy

    Science.gov (United States)

    Afanas'ev, V. P.; Gryazev, A. S.; Kaplya, P. S.; Köppen, M.; Ridzel, O. Yu; Subbotin, N. Yu; Hansen, P.

    2017-11-01

    Quantitative analysis of hydrogen isotopes in first wall as well as in construction materials of future fusion devices plays a crucial role to understand the evolution of those materials under operation conditions. A quantitative understanding of hydrogen in materials is also an important issue for storing energy as well as for fuel cells. A combination of Electron Energy Loss Spectroscopy (EELS) and Elastic Peak Electron Spectroscopy (EPES) is presented in this study to tackle these problems of modern material research for energy production and storage. Accurate inelastic scattering background subtraction is a key part of the presented quantitative measurement of the Be/D ratio. The differential inelastic scattering cross-section is determined by the fitting procedure. The fitting procedure is based on the iterative solution of the direct problem and minimization of the residual between computed and measured spectra. This study also takes into account the difference in electron energy loss laws for surface and bulk. The inelastic scattering cross-sections for different doses of deuterium ions in beryllium substrate (5.5·1021 m-2 and 2.01·1022 m-2) were defined in a two-layered model. The analysis is carried out for the EELS spectra. Relative concentration of D atoms is defined.

  9. Photoluminescence properties of boron doped InSe single crystals

    International Nuclear Information System (INIS)

    Ertap, H.; Bacıoğlu, A.; Karabulut, M.

    2015-01-01

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed

  10. Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

    2003-06-23

    This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

  11. Thermal desorption spectroscopy of boron/carbon films after keV deuterium irradiation

    International Nuclear Information System (INIS)

    Yamaki, T.; Gotoh, Y.; Ando, T.; Jimbou, R.; Ogiwara, N.; Saidoh, M.

    1994-01-01

    Thermal desorption spectroscopy (TDS) of D 2 and CD 4 was done on boron/carbon films (B/(B+C)=0-74%), after 3 keV D 3 + irradiation to 4.5x10 17 D/cm 2 at 473 K. The D 2 desorption peaks were observed at 1050, 850 and 650 K. For a sputter B/C film (0%), only the 1050 K peak was observed. With increasing boron concentration to 3%, a sharp peak appeared at 850 K, the intensity of which was found to increase with increasing boron concentration to 23%, and then to decrease at 74%. The 650 K shoulder, which was observed for high boron concentration specimens, was speculated to be deuterium trapped by boron atoms in the boron clusters. The relative amount of CD 4 desorption was found to decrease with increasing boron concentration, which was attributed to the decrease in the trapped deuterium concentration in the implantation layer at temperatures at which CD 4 desorption proceeds. ((orig.))

  12. Boron atom reactions

    International Nuclear Information System (INIS)

    Estes, R.; Tabacco, M.B.; Digiuseppe, T.G.; Davidovits, P.

    1982-01-01

    The reaction rates of atomic boron with various epoxides have been measured in a flow tube apparatus. The bimolecular rate constants, in units of cm 3 molecule -1 s -1 , are: 1,2-epoxypropane (8.6 x 10 -11 ), 1,2-epoxybutane (8.8 x 10 -11 ), 1,2,3,4-diepoxybutane (5.5 x 10 -11 ), 1-chloro-2,3-epoxypropane (5.7 x 10 -11 ), and 1,2-epoxy-3,3,3-trichloropropane (1.5 x 10 -11 ). (orig.)

  13. Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, G. E., E-mail: geyakovlev@etu.ru; Frolov, D. S.; Zubkova, A. V. [St. Petersburg State Electrotechnical University “LETI” (Russian Federation); Levina, E. E. [JSC National Research Institute “Electron” (Russian Federation); Zubkov, V. I.; Solomonov, A. V. [St. Petersburg State Electrotechnical University “LETI” (Russian Federation); Sterlyadkin, O. K.; Sorokin, S. A. [JSC National Research Institute “Electron” (Russian Federation)

    2016-03-15

    The method of electrochemical capacitance–voltage profiling is used to study boron-implanted silicon structures for CCD matrices with backside illumination. A series of specially prepared structures with different energies and doses of ion implantation and also with various materials used for the coating layers (aluminum, silicon oxide, and their combinations) is studied. The profiles of the depth distribution of majority charge carriers of the studied structures are obtained experimentally. Also, using the Poisson equation and the Fredholm equation of the first kind, the distributions of the charge-carrier concentration and of the electric field in the structures are calculated. On the basis of the analysis and comparison of theoretical and experimental concentration profiles, recommendations concerning optimization of the structures’ parameters in order to increase the value of the pulling field and decrease the effect of the surface potential on the transport of charge carriers are suggested.

  14. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)

    2015-05-14

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

  15. Correlation between room temperature luminescence and energy-transfer in Er–Au co-implanted silica

    Energy Technology Data Exchange (ETDEWEB)

    Cesca, T., E-mail: tiziana.cesca@unipd.it [Department of Physics and Astronomy and CNISM, via Marzolo 8, I-35131 Padova, University of Padova (Italy); Kalinic, B.; Maurizio, C.; Scian, C. [Department of Physics and Astronomy and CNISM, via Marzolo 8, I-35131 Padova, University of Padova (Italy); Trave, E.; Battaglin, G. [Department of Molecular Sciences and Nanosystems, Dorsoduro 2137, I-30123 Venice, Ca’ Foscari University of Venice (Italy); Mazzoldi, P.; Mattei, G. [Department of Physics and Astronomy and CNISM, via Marzolo 8, I-35131 Padova, University of Padova (Italy)

    2015-11-01

    We report on the room temperature photoluminescence characterization in the visible and near-infrared range of Er–Au co-implanted silica systems as a function of the annealing temperature. Besides the characteristic Er{sup 3+} emission at 1540 nm, the samples exhibit luminescence bands in the wavelength region 600–1400 nm related to the formation of ultra-small Au{sub N} aggregates with a number of atoms N less than 50 atoms. In particular, the correlation between such Au{sub N}-related luminescence and the enhancement of the Er{sup 3+} emission was investigated and an anti-correlation between the Er{sup 3+} luminescence at 1540 nm and an Au{sub N}-related band at 980 nm was revealed that represents a possible path for the energy-transfer from Au{sub N} nanoclusters to Er{sup 3+} ions, giving rise to the Er{sup 3+} sensitized emission.

  16. Implantation annealing by scanning electron beam

    International Nuclear Information System (INIS)

    Jaussaud, C.; Biasse, B.; Cartier, A.M.; Bontemps, A.

    1983-11-01

    Samples of ion implanted silicon (BF 2 , 30keV, 10 15 ions x cm -2 ) have been annealed with a multiple scan electron beam, at temperatures ranging from 1000 to 1200 0 C. The curves of sheet resistance versus time show a minimum. Nuclear reaction measurements of the amount of boron remaining after annealing show that the increase in sheet resistance is due to a loss of boron. The increase in junction depths, measured by spreading resistance on bevels is between a few hundred A and 1000 A [fr

  17. Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

    2006-01-01

    A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

  18. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Faria Gaspar, P. de.

    1994-01-01

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  19. Homojunction silicon solar cells doping by ion implantation

    Science.gov (United States)

    Milési, Frédéric; Coig, Marianne; Lerat, Jean-François; Desrues, Thibaut; Le Perchec, Jérôme; Lanterne, Adeline; Lachal, Laurent; Mazen, Frédéric

    2017-10-01

    Production costs and energy efficiency are the main priorities for the photovoltaic (PV) industry (COP21 conclusions). To lower costs and increase efficiency, we are proposing to reduce the number of processing steps involved in the manufacture of N-type Passivated Rear Totally Diffused (PERT) silicon solar cells. Replacing the conventional thermal diffusion doping steps by ion implantation followed by thermal annealing allows reducing the number of steps from 7 to 3 while maintaining similar efficiency. This alternative approach was investigated in the present work. Beamline and plasma immersion ion implantation (BLII and PIII) methods were used to insert n-(phosphorus) and p-type (boron) dopants into the Si substrate. With higher throughput and lower costs, PIII is a better candidate for the photovoltaic industry, compared to BL. However, the optimization of the plasma conditions is demanding and more complex than the beamline approach. Subsequent annealing was performed on selected samples to activate the dopants on both sides of the solar cell. Two annealing methods were investigated: soak and spike thermal annealing. Best performing solar cells, showing a PV efficiency of about 20%, was obtained using spike annealing with adapted ion implantation conditions.

  20. Folate Functionalized Boron Nitride Nanotubes and their Selective Uptake by Glioblastoma Multiforme Cells: Implications for their Use as Boron Carriers in Clinical Boron Neutron Capture Therapy.

    Science.gov (United States)

    Ciofani, Gianni; Raffa, Vittoria; Menciassi, Arianna; Cuschieri, Alfred

    2008-11-25

    Boron neutron capture therapy (BNCT) is increasingly being used in the treatment of several aggressive cancers, including cerebral glioblastoma multiforme. The main requirement for this therapy is selective targeting of tumor cells by sufficient quantities of (10)B atoms required for their capture/irradiation with low-energy thermal neutrons. The low content of boron targeting species in glioblastoma multiforme accounts for the difficulty in selective targeting of this very malignant cerebral tumor by this radiation modality. In the present study, we have used for the first time boron nitride nanotubes as carriers of boron atoms to overcome this problem and enhance the selective targeting and ablative efficacy of BNCT for these tumors. Following their dispersion in aqueous solution by noncovalent coating with biocompatible poly-l-lysine solutions, boron nitride nanotubes were functionalized with a fluorescent probe (quantum dots) to enable their tracking and with folic acid as selective tumor targeting ligand. Initial in vitro studies have confirmed substantive and selective uptake of these nanovectors by glioblastoma multiforme cells, an observation which confirms their potential clinical application for BNCT therapy for these malignant cerebral tumors.

  1. Folate Functionalized Boron Nitride Nanotubes and their Selective Uptake by Glioblastoma Multiforme Cells: Implications for their Use as Boron Carriers in Clinical Boron Neutron Capture Therapy

    Directory of Open Access Journals (Sweden)

    Ciofani Gianni

    2008-01-01

    Full Text Available Abstract Boron neutron capture therapy (BNCT is increasingly being used in the treatment of several aggressive cancers, including cerebral glioblastoma multiforme. The main requirement for this therapy is selective targeting of tumor cells by sufficient quantities of10B atoms required for their capture/irradiation with low-energy thermal neutrons. The low content of boron targeting species in glioblastoma multiforme accounts for the difficulty in selective targeting of this very malignant cerebral tumor by this radiation modality. In the present study, we have used for the first time boron nitride nanotubes as carriers of boron atoms to overcome this problem and enhance the selective targeting and ablative efficacy of BNCT for these tumors. Following their dispersion in aqueous solution by noncovalent coating with biocompatible poly-l-lysine solutions, boron nitride nanotubes were functionalized with a fluorescent probe (quantum dots to enable their tracking and with folic acid as selective tumor targeting ligand. Initial in vitro studies have confirmed substantive and selective uptake of these nanovectors by glioblastoma multiforme cells, an observation which confirms their potential clinical application for BNCT therapy for these malignant cerebral tumors.

  2. Mutation breeding and submerged fermentation of a Pleurotus polysaccharide high-yield strain with low-energy heavy ions implantation

    International Nuclear Information System (INIS)

    Chen Henglei; Wan Honggui; Lv Changwu; Zeng Xianxian

    2010-01-01

    Pleurotus polysaccharide high-yield strains were selected through a method of auxotrophic primary screening and Shake-flask fermentation re-screening after low-energy heavy ions (the fluence of 1.2 x 10 16 N + /cm 2 at the energy of 15 keV) stepwise implantation. Two Pleurotus polysaccharide high-yield strains, PFPH-1 and PFPH-2, were selected with stable mycelium polysaccharide yield. The mycelium polysaccharide yield of PFPH-1 and PFPH-2 increased by 46.55% and 75.14%, respectively, compared to the original strain. The accumulation of mycelium biomass and intracellular polysaccharides were monitored in the submerged fermentation of Pleurotus ferulae by supplementation of various carbon and nitrogen sources as well as inorganic salts and pH alteration. The optima1 submerged fermentation medium favoring the accumulation of mycelium biomass and intracellular polysaccharides of PFPH-2 consisted of 1.0% wheat flour, 2.0% sucrose, 2.0% soybean flour, 1.5% bran extract, 0.2% K 2 HPO 4 , and 0.15% MgSO 4 ·7H 2 O, with a fittest pH value of 5.64. The orthogonal combination of the optimal carbon and nitrogen sources with inorganic salts indicates a synergistic effect on the accumulation of mycelium biomass and intracellular polysaccharides in the submerged fermentation of PFPH-2. The yield of mycelium polysaccharides of PFPH-2 increased to 903.73 ± 1.23 mg·L -1 by the end of fermentation. (authors)

  3. Study on transferring improved green fluorescent protein gene into wheat via low energy Ar+ implantation

    International Nuclear Information System (INIS)

    Wu Lifang; Li Hong; Song Daojun

    2000-01-01

    An improved GFP gene (mGFP4) was introduced into mature embryo cells of wheat cultivars Wan 9210 and Wanmai 32 via low energy ion beam-mediated delivery technique. Resistant calli were selected on medium containing paromomycin (100-140 mg/L). Five green plants were regenerated from resistant calli of Wan 9210 derived from 387 implated mature embryos. 32 green plants were obtained from 776 irradiated mature embryos in Wanmai 32. No green plant was regenerated from calli of 200 non-transformed embryos. PCR assays of 37 green plants showed that they all obtained the expected size of amplified DNA fragment (600 bp). Southern blot of 4 well-developed green plants confirmed stable integration of GFP gene into wheat genome. The average transformation frequencies of Wan 9210 and Wanmai 32 were 1.3% and 4.1%, respectively, according to the results of PCR assays

  4. Totally implantable total artificial heart and ventricular assist device with multipurpose miniature electromechanical energy system.

    Science.gov (United States)

    Takatani, S; Orime, Y; Tasai, K; Ohara, Y; Naito, K; Mizuguchi, K; Makinouchi, K; Damm, G; Glueck, J; Ling, J

    1994-01-01

    A multipurpose miniature electromechanical energy system has been developed to yield a compact, efficient, durable, and biocompatible total artificial heart (TAH) and ventricular assist device (VAD). Associated controller-driver electronics were recently miniaturized and converted into hybrid circuits. The hybrid controller consists of a microprocessor and controller, motor driver, Hall sensor, and commutation circuit hybrids. The sizing study demonstrated that all these components can be incorporated in the pumping unit of the TAH and VAD, particularly in the centerpiece of the TAH and the motor housing of the VAD. Both TAH and VAD pumping units will start when their power line is connected to either the internal power pack or the external battery unit. As a redundant driving and diagnostic port, an emergency port was newly added and will be placed in subcutaneous location. In case of system failure, the skin will be cut down, and an external motor drive or a pneumatic driver will be connected to this port to run the TAH. This will minimize the circulatory arrest time. Overall efficiency of the TAH without the transcutaneous energy transmission system was 14-18% to deliver pump outputs of 4-9 L/min against the right and left afterload pressures of 25 and 100 mm Hg. The internal power requirement ranged from 6 to 13 W. The rechargeable batteries such as NiCd or NiMH with 1 AH capacity can run the TAH for 30-45 min. The external power requirement, when TETS efficiency of 75% was assumed, ranged from 8 to 18 W. The accelerated endurance test in the 42 degrees C saline bath demonstrated stable performance over 4 months. Long-term endurance and chronic animal studies will continue toward a system with 5 years durability by the year 2000.

  5. Effects of O2 and H2O plasma immersion ion implantation on surface chemical composition and surface energy of poly vinyl chloride

    International Nuclear Information System (INIS)

    Zhang Wei; Chu, Paul K.; Ji Junhui; Zhang, Yihe; Jiang Zhimin

    2006-01-01

    Oxygen and water plasma immersion ion implantation (PIII) was used to modify poly vinyl chloride (PVC) to enhance oxygen-containing surface functional groups for more effective grafting. The modified surfaces were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), and contact angle measurements. Our experimental results show that both oxygen and water PIII can greatly improve the O to C ratios on the surface. The optimal plasma processing conditions differ for the two treatments. The hydrophilicity and surface energy of the plasma-implanted PVC are also improved significantly. Our results indicate that O 2 and H 2 O PIII increase both the polar and dispersion interactions and consequently the surface energy. It can be explained by the large amount of oxygen introduced to the surface and that many C-C bonds are transformed into more polar oxygen containing functional groups

  6. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  7. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  8. The Study of the Oxide Coating Effect on Bone-Implant Interface Formation by Means of Electron Microscopy Method with Energy Dispersive X-ray Analysis

    International Nuclear Information System (INIS)

    Gudakova, A.A.; Danilchenko, S.N.; Sukhodub, L.F.; Luk'yanchenko, V.V.; Zykova, A.V.; Safonov, V.I.

    2006-01-01

    The experimental results of the measurement of the tissue constituent elements distribution, as well as impurity elements in the tissues around a Ti-implant with protective TiO 2 oxide coating are presented. Study of morphology, qualitative and quantitative analysis were carried out by means of scanning electron microscopy method with energy dispersive X-ray analysis. The results show weak migration of Ti into the bone tissue near the interface and protective role of the oxide coatings

  9. Separation process for boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Rockwood, S D

    1975-06-12

    The method according to the invention is characterized by the steps of preparing a gaseous mixture of BCl/sub 3/ containing the isotopes of boron and oxygen as the extractor, irradiating that mixture in the tube of the separator device by means of P- or R-lines of a CO/sub 2/ laser for exciting the molecules containing a given isotope of boron, simultaneously irradiating the mixture with UV for photodissociating the excited BCl/sub 3/ molecules and separating BCl/sub 3/ from the reaction products of photodissociation and from oxygen. Such method is suitable for preparing boron used in nuclear reactors.

  10. The optical properties of boron carbide near boron K-edge inside periodical multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ksenzov, Dmitriy; Schlemper, Christoph; Pietsch, Ullrich [University of Siegen (Germany)

    2010-07-01

    Multilayer mirrors made for the use in the wavelength range near K-edge of boron (188 eV) are of great interest for X-ray fluorescence analysis of boron content in doped semiconductors, plasma diagnostics, astronomy and lithography. Moreover, multilayer mirrors composed by a metal and a low Z element like boron are used as optical elements in both the soft x-ray spectral range as well as at higher photon energies on 3rd generation synchrotron beamlines. Using an energy-resolved photon-in-photon-out method we reconstructed the optical data from energy dependence of both integrated peak intensity and FWHM of the 1st order ML Bragg peak measured at the UHV triple axis soft-x-ray reflectometer at BESSY II. The experiments clearly demonstrate that the peak shape of the ML Bragg peak is most sensitive to any kind of electronic excitation and recombination in solid. The soft-ray reflectivity can give detailed information for MLs with thickness up to several tens of nanometers. In addition, measurements close to a resonance edge probe the chemical state of the respective constituent accompanied with a high sensitivity of changes close to the sample surface.

  11. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    Vast, N.

    1999-01-01

    The atomic structure and the lattice dynamics of α boron and of B 4 C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B 4 C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  12. Pilot study for the implantation of a high-energy neutrons field

    International Nuclear Information System (INIS)

    Pinto, Jose Julio de O.; Mendes, Adriane C.; Federico, Claudio A.; Passaro, Angelo; Gaspar, Felipe de B.; Pazianotto, Mauricio T.

    2013-01-01

    In this work a theoretical study is presented for the implementation of a high-energy neutron field (14.1 MeV) produced by a neutron generator type DT (deuterium-tritium), to be installed in the premises of the Laboratorio de Radiacoes Ionizantes (LRI) of the Instituto de Estudos Avancados (IEAv). This evaluation was performed by means of computer simulation by Monte Carlo method, using the computer code MCNP5 (Monte Carlo N-Particle). The neutron spectra were simulated computationally for pre-selected points of the installation, allowing to estimate the beam quality in the positions provided for use of the direct beam. These simulations also allow assist the basement of a project to install the consistent D-T generator with the guidelines for radiation protection and radiation safety standards determined by the Comissao Nacional de Energia Nuclear (CNEN), by estimating the dose rates provided in accessible points to Individuals Occupationally Exposed (IOE) in the facility. The computational determination of spectra, fluxes and doses produced in different positions previously selected within and outside the laboratory, will serve as guidance from previous studies for the future installation of this generator in the physical facilities of the LRI

  13. Performance test for implantation of a primary standard of low energy X-ray beams

    International Nuclear Information System (INIS)

    Cardoso, Ricardo de Souza; Bossio, Francisco; Peixoto, Jose Guilherme P.

    2005-01-01

    The implementation of a standard laboratory of calibration chambers that will serve to radiotherapy activities, radiodiagnosis and radioprotection, depends on the knowledge of physical and dosimetric parameters that characterize the quality of the radiation beam. With the aim of verifying the reliability of the ionizing free-air chamber with variable volume manufactured by Victoreen Instruments, model 481, as a primary standard, a study of the performance of the chamber to x-rays qualities of low energy was developed in this work. These qualities are the ones recommended by 'Bureau International des Poids et Mesures' - BIPM, for daily routine of the calibration service performed by the 'Laboratorio Nacional de Metrologia das Radiacoes Ionizantes - LNMRI/IRD, for calibration of this secondary standard chambers that serve to the control in hospitals, clinics and industries. The results obtained at the present work show that the Victoreen chamber model 481 behaves as a primary standard, being easy to handle and having simple mechanical construction, and showing an expanded uncertainty equal to 0,26%, regarding the quality of the radiation beam of 30 kV. However, some of the equipment used at the present study need to be submitted to a strict routine calibration, in order for the laboratory to be in accordance with the recommendations of the standard ABNT -NBR ISO/IEC 17025 (2003). (author)

  14. Surface characterization of the cement for retention of implant supported dental prostheses: In vitro evaluation of cement roughness and surface free energy

    International Nuclear Information System (INIS)

    Brajkovic, Denis; Antonijevic, Djordje; Milovanovic, Petar; Kisic, Danilo; Zelic, Ksenija; Djuric, Marija; Rakocevic, Zlatko

    2014-01-01

    Graphical abstract: - Highlights: • Surface free energy and surface roughness influence bacterial adhesion. • Bacterial colonization causes periimplantitis and implant loss. • Zinc-based, glass-ionomers and resin-cements were investigated. • Glass-ionomers-cements present the lowest values of surface free energy and roughness. • Glass-ionomer-cements surface properties result with reduced bacterial adhesion. - Abstract: Background: Material surface free energy and surface roughness strongly influence the bacterial adhesion in oral cavity. The aim of this study was to analyze these two parameters in various commercial luting agents used for cementation of implant restorations. Materials and methods: Zinc-based, glass-ionomers, resin modified glass-ionomer and resin-cements were investigated. Contact angle and surface free energy were measured by contact angle analyzer using Image J software program. Materials’ average roughness and fractal dimension were calculated based on Atomic Force Microscope topography images. Results: Zinc phosphate cements presented significantly higher total surface free energy and significantly lower dispersive component of surface free energy compared to other groups, while resin-cements showed significantly lower polar component than other groups. The surface roughness and fractal dimension values were statistically the highest in the zinc phosphate cements and the lowest for the glass-ionomers cements. Conclusion: Glass-ionomers-cements presented lower values of surface free energy and surface roughness than zinc phosphate and resin cements, indicating that their surfaces are less prone to biofilm adhesion. Practical implications: Within limitations of an in vitro trial, our results indicate that glass-ionomers-cements could be the cements of choice for fixation of cement retained implant restorations due to superior surface properties compared to zinc phosphate and resin cements, which may result in reduced plaque formation

  15. Surface characterization of the cement for retention of implant supported dental prostheses: In vitro evaluation of cement roughness and surface free energy

    Energy Technology Data Exchange (ETDEWEB)

    Brajkovic, Denis [Clinic for Dentistry, Department of Maxillofacial Surgery, Faculty of Medical Sciences, University of Kragujevac, Svetozara Markovica 69, 34000 Kragujevac (Serbia); Antonijevic, Djordje; Milovanovic, Petar [Laboratory for Anthropology, Institute of Anatomy, School of Medicine, University of Belgrade, Dr. Subotica 4/2, 11000 Belgrade (Serbia); Kisic, Danilo [Laboratory for Atomic Physics, Institute of Nuclear Sciences “Vinca”, University of Belgrade, Belgrade (Serbia); Zelic, Ksenija; Djuric, Marija [Laboratory for Anthropology, Institute of Anatomy, School of Medicine, University of Belgrade, Dr. Subotica 4/2, 11000 Belgrade (Serbia); Rakocevic, Zlatko, E-mail: zlatkora@vinca.rs [Laboratory for Atomic Physics, Institute of Nuclear Sciences “Vinca”, University of Belgrade, Belgrade (Serbia)

    2014-08-30

    Graphical abstract: - Highlights: • Surface free energy and surface roughness influence bacterial adhesion. • Bacterial colonization causes periimplantitis and implant loss. • Zinc-based, glass-ionomers and resin-cements were investigated. • Glass-ionomers-cements present the lowest values of surface free energy and roughness. • Glass-ionomer-cements surface properties result with reduced bacterial adhesion. - Abstract: Background: Material surface free energy and surface roughness strongly influence the bacterial adhesion in oral cavity. The aim of this study was to analyze these two parameters in various commercial luting agents used for cementation of implant restorations. Materials and methods: Zinc-based, glass-ionomers, resin modified glass-ionomer and resin-cements were investigated. Contact angle and surface free energy were measured by contact angle analyzer using Image J software program. Materials’ average roughness and fractal dimension were calculated based on Atomic Force Microscope topography images. Results: Zinc phosphate cements presented significantly higher total surface free energy and significantly lower dispersive component of surface free energy compared to other groups, while resin-cements showed significantly lower polar component than other groups. The surface roughness and fractal dimension values were statistically the highest in the zinc phosphate cements and the lowest for the glass-ionomers cements. Conclusion: Glass-ionomers-cements presented lower values of surface free energy and surface roughness than zinc phosphate and resin cements, indicating that their surfaces are less prone to biofilm adhesion. Practical implications: Within limitations of an in vitro trial, our results indicate that glass-ionomers-cements could be the cements of choice for fixation of cement retained implant restorations due to superior surface properties compared to zinc phosphate and resin cements, which may result in reduced plaque formation

  16. Nothing Boring About Boron

    Science.gov (United States)

    Pizzorno, Lara

    2015-01-01

    The trace mineral boron is a micronutrient with diverse and vitally important roles in metabolism that render it necessary for plant, animal, and human health, and as recent research suggests, possibly for the evolution of life on Earth. As the current article shows, boron has been proven to be an important trace mineral because it (1) is essential for the growth and maintenance of bone; (2) greatly improves wound healing; (3) beneficially impacts the body’s use of estrogen, testosterone, and vitamin D; (4) boosts magnesium absorption; (5) reduces levels of inflammatory biomarkers, such as high-sensitivity C-reactive protein (hs-CRP) and tumor necrosis factor α (TNF-α); (6) raises levels of antioxidant enzymes, such as superoxide dismutase (SOD), catalase, and glutathione peroxidase; (7) protects against pesticide-induced oxidative stress and heavy-metal toxicity; (8) improves the brains electrical activity, cognitive performance, and short-term memory for elders; (9) influences the formation and activity of key biomolecules, such as S-adenosyl methionine (SAM-e) and nicotinamide adenine dinucleotide (NAD+); (10) has demonstrated preventive and therapeutic effects in a number of cancers, such as prostate, cervical, and lung cancers, and multiple and non-Hodgkin’s lymphoma; and (11) may help ameliorate the adverse effects of traditional chemotherapeutic agents. In none of the numerous studies conducted to date, however, do boron’s beneficial effects appear at intakes > 3 mg/d. No estimated average requirements (EARs) or dietary reference intakes (DRIs) have been set for boron—only an upper intake level (UL) of 20 mg/d for individuals aged ≥ 18 y. The absence of studies showing harm in conjunction with the substantial number of articles showing benefits support the consideration of boron supplementation of 3 mg/d for any individual who is consuming a diet lacking in fruits and vegetables or who is at risk for or has osteopenia; osteoporosis

  17. “Atrial torsades de pointes” Induced by Low-Energy Shock From Implantable-Cardioverter Defibrillator

    Directory of Open Access Journals (Sweden)

    Ilknur Can, MD

    2013-09-01

    Full Text Available A 58 year-old-patient developed an episode of polymorphic atrial tachycardia which looked like "atrial torsades de pointes" after a 5J shock from implantable cardioverter defibrillator.

  18. Influence of operating parameters on the arsenic and boron removal by electrocoagulation

    International Nuclear Information System (INIS)

    Can, B. Z.; Boncukcuoglu, R.; Bayar, S.; Bayhan, Y.K

    2016-01-01

    Despite their high boron contents, some boron deposits contain considerable amounts of arsenic. Its toxicology and health hazard also has been reported for many years. In this work arsenic and boron removal from synthetic water was studied on laboratory scale by electrocoagulation using aluminum electrodes. The influence of main operating parameters such as current density, stirring speed, supporting electrolyte type and concentration on the arsenic and boron removal was investigated. Waste water sample was prepared with initial arsenic concentration of 50 mg L/sup -1/ and boron concentration of 1000 mg L/sup -1/. Current density was varied from 0.18 to 4.28 mA cm/sup -2/, stirring speed was varied as 50, 150, 250, 350 rpm, NaCl, KCl and Na/sub 2/SO/sub 4/ were used as supporting electrolyte. The obtained experimental results showed that efficiency of arsenic and boron removal increased with increasing current density. As the current density increases, the potential difference applied to the system also increases the energy consumption. Increasing the supporting electrolyte concentration increased conductivity of solution and decreased energy consumption. The most favorable supporting electrolyte type was NaCl for arsenic and boron removal. The best stirring speed was 150 rpm for arsenic and boron removal. (author)

  19. Boronization in TEXTOR

    International Nuclear Information System (INIS)

    Winter, J.; Esser, H.G.; Koenen, L.; Reimer, H.; Seggern, J. v.; Schlueter, J.; Waelbroeck, F.; Wienhold, P.; Veprek, S.

    1989-01-01

    The liner and limiters of TEXTOR have been coated in situ with a boron containing carbon film using a RG discharge in a throughflow of 0.8 He + 0.1 B 2 H 6 + 0.1 CH 4 . The average film thickness was 30-50 nm, the ratio of boron and carbon in the layer was about 1:1 according to Auger Electron Spectroscopy. Subsequent tokamak discharges are characterized by a small fraction of radiated power ( eff lower than 1.2 are derived from conductivity measurements. The most prominent change in the impurity concentration compared to good conditions in a carbonized surrounding is measured for oxygen. The value OVI/anti n e of the OVI intensity normalized to the averaged plasma density anti n e decreases by more than a factor of four. The decrease in the oxygen content manifests itself also as a reduction of the CO and CO 2 partial pressures measured during and after the discharge with a sniffer probe. The carbon levels are reduced by a factor of about two as measured by the normalized intensity CII/anti n e of the CII line and via the ratio of the C fluxes and deuterium fluxed measured at the limiter (CI/D α ). The wall shows a pronounced sorption of hydrogen from the plasma, easing the density control and the establishment of low recycling conditions. The beneficial conditions did not show a significant deterioration during more than 200 discharges, including numerous shots at ICRH power levels >2 MW. (orig.)

  20. Tribological properties of ion-implanted steels

    International Nuclear Information System (INIS)

    Iwaki, Masaya

    1987-01-01

    The tribological properties such as surface hardness, friction and wear have been studied for low carbon steels and tool steels implanted with many types of ion including metallic elements. The hardness measured by Vickers or Knoop hardness testers as a function of normal load is dependent on the implanted species, fluence and substrate. The friction coefficients measured by Bowden-Leben type of friction tests or detected during wear tests also depend on the implantation conditions. The improvement in the wear resistance, which is most important for industrial use of implanted materials, has been investigated for AISI H13 prehardened and tool steels implanted with nitrogen and boron ions. The relationship between hardness, friction and wear is discussed in comparison with the microcharacteristics such as composition and chemical bonding states measured by means of secondary ion mass spectrometry and X-ray photoelectron spectroscopy. It is concluded that the increase in hardness and/or the decrease in friction coefficient play(s) an important role in improving the wear resistance, and the relationship between relative wear volume and relative hardness is correlated for boron and nitrogen implantation. (orig.)

  1. Note on boron toxicity in oats

    Energy Technology Data Exchange (ETDEWEB)

    Langille, W M; Mahoney, J F

    1959-01-01

    Boron was applied at the rate of 35 pounds per acre of borax to a field of oats. With the first noticeable growth there appeared a definite chlorotic condition of the oat seedlings on plots receiving boron treatments. Analysis of chlorotic tissue at 3 weeks after seeding indicated 110 ppm boron, while apparently healthy tissue contained 6.1 ppm boron at the same stage of growth. There was a rapid decline in the boron content of the oat tissue as the crop grew older. At maturity the oat tissue from the boron-treated plots contained an average of 14.15 ppm boron as compared with 4.10 boron from untreated areas. Boron toxicity had no harmful effect so far as yields were concerned, under the conditions of this experiment. 3 references.

  2. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  3. Metal interactions with boron clusters

    International Nuclear Information System (INIS)

    Grimes, R.N.

    1982-01-01

    This book presents information on the following topics: the structural and bonding features of metallaboranes and metallacarboranes; transition-metal derivatives of nido-boranes and some related species; interactions of metal groups with the octahydrotriborate (1-) anion, B 3 H 8 ; metallaboron cage compounds of the main group metals; closo-carborane-metal complexes containing metal-carbon and metal-boron omega-bonds; electrochemistry of metallaboron cage compounds; and boron clusters with transition metal-hydrogen bonds

  4. Stability analysis of zigzag boron nitride nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Hari Mohan, E-mail: rai.2208@gmail.com; Late, Ravikiran; Saxena, Shailendra K.; Kumar, Rajesh; Sagdeo, Pankaj R. [Indian Institute of Technology, Indore –452017 (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM- Indian Institute of Information Technology, Design and Manufacturing, Jabalpur – 482005 (India); Srivastava, Pankaj [Computational Nanoscience and Technology Lab. (CNTL), ABV- Indian Institute of Information Technology and Management, Gwalior – 474015 (India)

    2015-05-15

    We have explored the structural stability of bare and hydrogenated zigzag boron nitride nanoribbons (ZBNNRs). In order to investigate the structural stability, we calculate the cohesive energy for bare, one-edge and both edges H-terminated ZBNNRs with different widths. It is found that the ZBNNRs with width Nz=8 are energetically more favorable than the lower-width counterparts (Nz<8). Bare ZBNNRs have been found energetically most stable as compared to the edge terminated ribbons. Our analysis reveals that the structural stability is a function of ribbon-width and it is not affected significantly by the type of edge-passivation (one-edge or both-edges)

  5. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    Vega C, H.R.

    2002-01-01

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  6. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    . Phys. 94 (September (6)) (2003) 3883-3890; S. Eguchi, C.N. Chleirigh, O.O. Olubuyide, J.L. Hoyt, Appl. Phys. Lett. 84 (January (3)) (2004) 368-370] in which the equilibrium state of point defects is achieved. These are not the conditions used in aggressive CMOS technologies. Our experiment has therefore been designed to investigate boron diffusion in both strained and strain-relaxed SiGe including ultra-low energy, high concentration boron implant and spike RTA. Models are proposed and the retardation factors corresponding to Ge concentration and stress effect were successfully extracted through these experiments. This paper describes these experiments, with the calibration and the resulting diffusion constants for an ultra-shallow boron junction in SiGe that is popular in advanced CMOS technology

  7. Reduction of dark-band-like metal artifacts caused by dental implant bodies using hypothetical monoenergetic imaging after dual-energy computed tomography.

    Science.gov (United States)

    Tanaka, Ray; Hayashi, Takafumi; Ike, Makiko; Noto, Yoshiyuki; Goto, Tazuko K

    2013-06-01

    The aim of this study was to evaluate the usefulness of hypothetical monoenergetic images after dual-energy computed tomography (DECT) for assessment of the bone encircling dental implant bodies. Seventy-two axial images of implantation sites clipped out from image data scanned using DECT in dual-energy mode were used. Subjective assessment on reduction of dark-band-like artifacts (R-DBAs) and diagnosability of adjacent bone condition (D-ABC) in 3 sets of DECT images-a fused image set (DE120) and 2 sets of hypothetical monoenergetic images (ME100, ME190)-was performed and the results were statistically analyzed. With regards to R-DBAs and D-ABC, significant differences among DE120, ME100, and ME190 were observed. The ME100 and ME190 images revealed more artifact reduction and diagnosability than those of DE120. DECT imaging followed by hypothetical monoenergetic image construction can cause R-DBAs and increase D-ABC and may be potentially used for the evaluation of postoperative changes in the bone encircling implant bodies. Copyright © 2013 Elsevier Inc. All rights reserved.

  8. Inter-layer potential for hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Leven, Itai; Hod, Oded, E-mail: odedhod@tau.ac.il [Department of Chemical Physics, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences, Tel-Aviv University, Tel-Aviv 69978 (Israel); Azuri, Ido; Kronik, Leeor [Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100 (Israel)

    2014-03-14

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  9. Introduction to Neutron Coincidence Counter Design Based on Boron-10

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Ely, James H.; Lintereur, Azaree T.; Siciliano, Edward R.

    2012-01-22

    The Department of Energy Office of Nonproliferation Policy (NA-241) is supporting the project 'Coincidence Counting With Boron-Based Alternative Neutron Detection Technology' at Pacific Northwest National Laboratory (PNNL) for development of an alternative neutron coincidence counter. The goal of this project is ultimately to design, build and demonstrate a boron-lined proportional tube based alternative system in the configuration of a coincidence counter. This report, providing background information for this project, is the deliverable under Task 1 of the project.

  10. Inter-layer potential for hexagonal boron nitride

    Science.gov (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  11. Inter-layer potential for hexagonal boron nitride

    International Nuclear Information System (INIS)

    Leven, Itai; Hod, Oded; Azuri, Ido; Kronik, Leeor

    2014-01-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures

  12. The Vibrational Spectra of the Boron Halides and their Molecular ...

    African Journals Online (AJOL)

    The structures, interaction energies and vibrational spectra of the van derWaals complexes formed between boron trifluoride, as Lewis acid, and water and hydrogen sulphide, as Lewis bases, have been determined by means of ab initio calculations at the second-order level of Møller-Plesset perturbation theory, using a ...

  13. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  14. Cochlear Implants

    Science.gov (United States)

    ... implant, including: • How long a person has been deaf, •The number of surviving auditory nerve fibers, and • ... Implant, Severe Sensoryneurial Hearing Loss Get Involved Professional Development Practice Management ENT Careers Marketplace Privacy Policy Terms ...

  15. Depth profiling of hydrogen passivation of boron in Si(100)

    Science.gov (United States)

    Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

    1992-08-01

    The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

  16. Neutron-gamma discrimination of boron loaded plastic scintillator

    International Nuclear Information System (INIS)

    Wang Dong; He Bin; Zhang Quanhu; Wu Chuangxin; Luo Zhonghui

    2010-01-01

    Boron loaded plastic scintillator could detect both fast neutrons thanks to hydrogen and thermal neutrons thanks to 10B. Both reactions have large cross sections, and results in high detection efficiency of incident neutrons. However, similar with other organic scintillators, boron loaded plastic scintillator is sensitive to gamma rays and neutrons. So gamma rays must be rejected from neutrons using their different behavior in the scintillator. In the present research zero crossing method was used to test neutron-gamma discrimination of BC454 boron loaded plastic scintillator. There are three Gaussian peaks in the time spectrum, they are corresponding to gamma rays, fast neutrons and flow neutrons respectively. Conclusion could be made that BC454 could clear discriminate slow neutrons and gamma, but the discrimination performance turns poor as the neutrons' energy becomes larger. (authors)

  17. Optimization of L(+)-Lactic Acid Fermentation Without Neutralisation of Rhizopus Oryzae Mutant RK02 by Low-Energy Ion Implantation

    International Nuclear Information System (INIS)

    Li Wen; Wang Tao; Yang Yingge; Liu Dan; Fan Yonghong; Wang Dongmei; Yang Qian; Yao Jianming; Zheng Zhiming; Yu Zengliang

    2008-01-01

    In order to get an industrial strain which can yield a high concentration of lactic acid for ISPR (in situ product removal), the original strain Rhizopus oryzae RE3303 was mutated by low-energy ion beam implantation. A mutant RK02 was screened, and the factors such as the substrate concentration, nitrogen source concentration, inoculum size, seed age, aeration and temperature that affect the production of lactic acid were studied in detail. Under optimal conditions, the maximum concentration of L(+)-lactic acid reached 34.85 g/L after 30 h shake-flask cultivation without adding any neutralisation (5% Glucose added), which was a 146% increase in lactic acid production after ion implantation compared with the original strain. It was also shown that RK02 can be used in ISPR to reduce the number of times of separation.

  18. Mg-doping experiment and electrical transport measurement of boron nanobelts

    International Nuclear Information System (INIS)

    Kirihara, K.; Hyodo, H.; Fujihisa, H.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.

    2006-01-01

    We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10 -3 (Ω cm) -1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10 -3 (cm 2 Vs -1 ) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. - Graphical abstract: SEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography. Display Omitted

  19. B4C solid target boronization of the MST reversed-field pinch

    International Nuclear Information System (INIS)

    Den Hartog, D.J.; Cekic, M.; Fiksel, G.; Hokin, S.A.; Kendrick, R.D.; Prager, S.C.; Stoneking, M.R.

    1992-10-01

    A solid rod of hot-pressed boron carbide is being used as the source of boron during boronization of MST. The most striking result of this procedure is the reduction in oxygen contamination of the plasma (O III radiation, characteristic of oxygen at the edge, falls by about a factor of 3 after boronization.). The radiated power fraction drops to about half its initial value. Particle reflux from the wall is also lowered, making density control simpler. The rod (12.7 mm diameter) is inserted into the edge plasma of normal high-power RFP discharges. B 4 C is ablated from the surface of the rod and deposited in a thin film (a-B/C:H) on the walls and limiters. The energy flux carried by ''superthermal'' (not ''runaway'') electrons at the edge of MST appears to enhance the efficient, non-destructive ablation of the boron carbide rod

  20. Substitutional Boron in Nanodiamond, Bucky-Diamond, and Nanocrystalline Diamond Grain Boundaries

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, Amanda S.; Sternberg, Michael G.

    2006-10-05

    Although boron has been known for many years to be a successful dopant in bulk diamond, efficient doping of nanocrystalline diamond with boron is still being developed. In general, the location, configuration, and bonding structure of boron in nanodiamond is still unknown, including the fundamental question of whether it is located within grains or grain boundaries of thin films and whether it is within the core or at the surface of nanoparticles. Presented here are density functional tight-binding simulations examining the configuration, potential energy surface, and electronic charge of substitutional boron in various types of nanocrystalline diamond. The results predict that boron is likely to be positioned at the surface of isolated particles and at the grain boundary of thin-film samples.

  1. Raman spectra of hot-pressed boron suboxide

    CSIR Research Space (South Africa)

    Machaka, R

    2011-01-01

    Full Text Available on in- situ/online measurements (such as GIXRD, Raman Spectroscopy, FIB- Electron Microscopy) during (i) ion implantation, (ii) PLD growth of nanoparticles SW/MW-CNTs, oxide semiconductor multi-layer, metal/Si and metal/metal systems. Moreover, He...], aluminium magnesium boride ? AlMgB14 [8], and the newly synthesized boron subnitride ? B13N2 [9, 10]. With hardness values reported between 24 GPa and 45 GPa [7, 11, 12], B6O is sometimes considered to be the third hardest material only after diamond...

  2. Boron Removal from Seawater by Thin-Film Composite Reverse Osmosis Membranes

    KAUST Repository

    Al Sunbul, Yasmeen

    2018-04-01

    Reverse Osmosis membranes have been successfully proven to remove almost 99% of chemicals dissolved in seawater. However, removal of certain trace elements, such as boron is challenging and relatively low for seawater reverse osmosis desalination plants compared to thermal desalination plants. Boron is naturally occurring and is present in seawater at an average concentration of 4.5-5 mg/L. While boron is a vital element, its toxicity has been proven on crops, animals and possibly humans. Additionally, boron should be removed to comply with the current guideline value of 0.5 mg/L, for drinking water, issued by the World Health Organization (WHO), which is barely attained by a single-pass process seawater reverse osmosis plant. Currently, multipass reverse osmosis membrane operations with pH modifications are the only valid method for boron removal. However, this is not economically efficient as it requires higher energy and chemicals consumptions. The objective of this study was to investigate boron removal by commercial TFC RO membranes in addition to custom-made KAUST-synthesized TFC membrane. Five membrane samples were examined: Toray, Sepro, Koch, and KAUST in-house synthesized membrane. Three different feed pH conditions were used: pH6, pH8, and pH10. Filtration experiments were conducted in two parts. In experiment 1, all five membranes were examined for boron rejection in a dead-end permeation system, whereas in experiment 2 the two membranes with the highest boron rejection from experiment 1 were tested in a cross-flow system. Permeate and feed samples were taken continuously and analyzed for boron concentration, rejection calculation. Membrane surfaces were characterized according to hydrophilicity, roughness and surface charge. The results showed for all the tested membranes that boron rejection increased as the feed pH increased. KAUST, defect-free TFC, showed the highest performance for boron rejection for all pH conditions, although, it shows the

  3. Metallic artefact reduction with monoenergetic dual-energy CT: systematic ex vivo evaluation of posterior spinal fusion implants from various vendors and different spine levels

    Energy Technology Data Exchange (ETDEWEB)

    Guggenberger, R.; Winklhofer, S.; Andreisek, G.; Alkadhi, H.; Stolzmann, P. [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zurich (Switzerland); Osterhoff, G.; Wanner, G.A. [University Hospital Zurich, Department of Surgery, Division of Trauma Surgery, Zurich (Switzerland); Fortunati, M. [The Spine Center, Thun (Switzerland)

    2012-11-15

    To evaluate optimal monoenergetic dual-energy computed tomography (DECT) settings for artefact reduction of posterior spinal fusion implants of various vendors and spine levels. Posterior spinal fusion implants of five vendors for cervical, thoracic and lumbar spine were examined ex vivo with single-energy (SE) CT (120 kVp) and DECT (140/100 kVp). Extrapolated monoenergetic DECT images at 64, 69, 88, 105 keV and individually adjusted monoenergy for optimised image quality (OPTkeV) were generated. Two independent radiologists assessed quantitative and qualitative image parameters for each device and spine level. Inter-reader agreements of quantitative and qualitative parameters were high (ICC = 0.81-1.00, {kappa} = 0.54-0.77). HU values of spinal fusion implants were significantly different among vendors (P < 0.001), spine levels (P < 0.01) and among SECT, monoenergetic DECT of 64, 69, 88, 105 keV and OPTkeV (P < 0.01). Image quality was significantly (P < 0.001) different between datasets and improved with higher monoenergies of DECT compared with SECT (V = 0.58, P < 0.001). Artefacts decreased significantly (V = 0.51, P < 0.001) at higher monoenergies. OPTkeV values ranged from 123-141 keV. OPTkeV according to vendor and spine level are presented herein. Monoenergetic DECT provides significantly better image quality and less metallic artefacts from implants than SECT. Use of individual keV values for vendor and spine level is recommended. (orig.)

  4. Interactions of Deuterium Plasma with Lithiated and Boronized Surfaces in NSTX-U

    Science.gov (United States)

    Krstic, Predrag

    2015-09-01

    The main research goal of the presented research has been to understand the changes in surface composition and chemistry at the nanoscopic temporal and spatial scales for long pulse Plasma Facing Components (PFCs) and link these to the overall machine performance of the National Spherical Torus Experiment Upgrade (NSTX-U). A study is presented of the lithium surface science, with atomic spatial and temporal resolutions. The dynamic surface responds and evolves in a mixed material environments (D, Li, C, B, O, Mo, W) with impingement of plasma particles in the energy range below 100 eV. The results, obtained by quantum-classical molecular dynamics, include microstructure changes, erosion, surface chemistry, deuterium implantation and permeation. Main objectives of the research are i) a comparison of Li and B deposition on carbon, ii) the role of oxygen and other impurities e.g. boron, carbon in the lithium performance, and iii) how this performance will change when lithium is applied to a high-Z refractory metal substrate (Mo, W). In addition to predicting and understanding the phenomenology of the processes, we will show plasma induced erosion of PFCs, including chemical and physical sputtering yields at various temperatures (300-700 K) as well as deuterium uptake/recycling. This work is supported by the U.S. Department of Energy Office of Science, Office of Fusion Energy Science, Award Number DE-SC0013752.

  5. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  6. Two photon absorption energy transfer in the light-harvesting complex of photosystem II (LHC-II) modified with organic boron dye

    Science.gov (United States)

    Chen, Li; Liu, Cheng; Hu, Rui; Feng, Jiao; Wang, Shuangqing; Li, Shayu; Yang, Chunhong; Yang, Guoqiang

    2014-07-01

    The plant light-harvesting complexes of photosystem II (LHC-II) play important roles in collecting solar energy and transferring the energy to the reaction centers of photosystems I and II. A two photon absorption compound, 4-(bromomethyl)-N-(4-(dimesitylboryl)phenyl)-N-phenylaniline (DMDP-CH2Br), was synthesized and covalently linked to the LHC-II in formation of a LHC-II-dye complex, which still maintained the biological activity of LHC-II system. Under irradiation with femtosecond laser pulses at 754 nm, the LHC-II-dye complex can absorb two photons of the laser light effectively compared with the wild type LHC-II. The absorbed excitation energy is then transferred to chlorophyll a with an obvious fluorescence enhancement. The results may be interesting and give potentials for developing hybrid photosystems.

  7. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Yilmaz, M. Tolga; Kocakerim, M. Muhtar

    2005-01-01

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions

  8. Two-dimensional boron: Lightest catalyst for hydrogen and oxygen evolution reaction

    Energy Technology Data Exchange (ETDEWEB)

    Mir, Showkat H. [Centre for Nano Science, Central University of Gujarat, Gandhinagar 382030 (India); Chakraborty, Sudip, E-mail: sudiphys@gmail.com, E-mail: prakash.jha@cug.ac.in; Wärnå, John [Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, Uppsala 75120 (Sweden); Jha, Prakash C., E-mail: sudiphys@gmail.com, E-mail: prakash.jha@cug.ac.in [School of Applied Material Sciences, Central University of Gujarat, Gandhinagar 382030 (India); Soni, Himadri [Lehrstuhl für Theoretische Chemie, Friedrich-Alexander Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058 Erlangen (Germany); Jha, Prafulla K. [Department of Physics, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara 390 002 (India); Ahuja, Rajeev [Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, Uppsala 75120 (Sweden); Department of Materials and Engineering, Royal Institute of Technology (KTH), 10044 Stockholm (Sweden)

    2016-08-01

    The hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) have been envisaged on a two-dimensional (2D) boron sheet through electronic structure calculations based on a density functional theory framework. To date, boron sheets are the lightest 2D material and, therefore, exploring the catalytic activity of such a monolayer system would be quite intuitive both from fundamental and application perspectives. We have functionalized the boron sheet (BS) with different elemental dopants like carbon, nitrogen, phosphorous, sulphur, and lithium and determined the adsorption energy for each case while hydrogen and oxygen are on top of the doping site of the boron sheet. The free energy calculated from the individual adsorption energy for each functionalized BS subsequently guides us to predict which case of functionalization serves better for the HER or the OER.

  9. Lattice vibrations in α-boron

    International Nuclear Information System (INIS)

    Richter, W.

    1976-01-01

    α-rhombohedral boron is the simplest boron modification, with only 12 atoms per unit cell. The boron atoms are arranged in B 12 icosahedra, which are centered at the lattice points of a primitive rhombohedral lattice. The icosahedra are slightly deformed, as the five-fold symmetry of the ideal icosahedron is incompatible with any crystal structure. The lattice dynamics of α-boron are discussed in terms of the model developed by Weber and Thorpe. (Auth.)

  10. The Raman effects in γ-LiAlO2 induced by low-energy Ga ion implantation

    Science.gov (United States)

    Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Wang, Tie-Jun; Yu, Xiao-Fei; Wang, Xue-Lin

    2017-10-01

    The tetragonal γ-LiAlO2 crystal, known as a promising solid breeding material in future fusion reactors, has attracted much attention for its irradiation effects. This work focused on the Raman effects in ion-implanted γ-LiAlO2. Ga ions of 30, 80 and 150 keV were implanted on the z-cut γ-LiAlO2 sample surfaces at a fluence of 1 × 1014 ions/cm2 or 1 × 1015 ions/cm2. The average ion range varied from 230 to 910 Å. The Raman spectra were collected from the implanted surfaces before and after the implantation. Evident changes were reflected in the Raman modes intensities, with abnormal increments for the most detected modes. According to the assignments of Raman modes, the Al-O vibration was enhanced to a greater extent than the Li-Al-O vibration, and the LiO4-AlO4 vibration gained a lesser enhancement. The discussion, including the factors of roughness, crystalline disorder and influence by Ga ions, attempts to explain the increments of Raman intensity.

  11. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  12. PRODUCTION OF AN INSULATION MATERIAL FROM CARPET AND BORON WASTES

    OpenAIRE

    Yasin ERDOĞAN

    2016-01-01

    Buildings are large consumers of energy in all countries. In regions with harsh climatic conditions, a substantial share of energy goes to heat and cool buildings. This paper reports an investigation of the insulation materials made from mixing carpet wastes with a solution with added crude colemanite ore, one of boron minerals, and a solution with added colemanite wastes from a barrage. A new building insulation material was produced which is name, Halibor. Optimum mixing ratios were determi...

  13. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  14. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  15. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    Jaraiz Franco, E.; Esteban Hernandez, J. A.

    1960-01-01

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe 2 B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  16. Chemical separation of boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF/sub 3/ gas and the liquid molecular addition compounds of BF/sub 3/. Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF/sub 3/ solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references.

  17. Chemical separation of boron isotopes

    International Nuclear Information System (INIS)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF 3 gas and the liquid molecular addition compounds of BF 3 . Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF 3 solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references

  18. Sintering of beryllium oxide with 3-4 per cent elemental boron

    International Nuclear Information System (INIS)

    Pointud, R.; Rispal, Ch.; Le Garec, M.

    1958-01-01

    In order to manufacture a baffle absorbing neutrons of various energies, there was developed or mixture of a slower and an absorber. It is made by hot pressing impure beryllium containing boron carbide. The dense briquette has 100 x 100 x 50 mm and is machined on all her faces. She is of 2,85 density and about 3 to 4 per cent porosity, according to 5 per cent of boron. Difference of boron amount is lower than ten per cent between any two points of the briquette. (author) [fr

  19. "Sequential” Boron Neutron Capture Therapy (BNCT): A Novel Approach to BNCT for the Treatment of Oral Cancer in the Hamster Cheek Pouch Model

    Energy Technology Data Exchange (ETDEWEB)

    Ana J. Molinari; Andrea Monti Hughes; Elisa M. Heber; Marcela A. Garabalino; Veronica A. Trivillin; Amanda E. Schwint; Emiliano C. C. Pozzi; Maria E. Itoiz; Silvia I. Thorp; Romina F. Aromando; David W. Nigg; Jorge Quintana; Gustavo A. Santa Cruz

    2011-04-01

    Boron Neutron Capture Therapy (BNCT) is a binary treatment modality that involves the selective accumulation of 10B carriers in tumors followed by irradiation with a thermal or epithermal neutron beam. The minor abundance stable isotope of boron, 10B, interacts with low energy (thermal) neutrons to produce high linear energy transfer (LET) a-particles and 7Li ions. These disintegration products are known to have a high relative biological effectiveness (RBE). Their short range (<10 {micro}m) would limit the damage to cells containing 10B (1,2). Thus, BNCT would target tumor tissue selectively, sparing normal tissue. Clinical trials of BNCT for the treatment of glioblastoma multiforme and/or melanoma and, more recently, head and neck tumors and liver metastases, using boronophenylalanine (BPA) or sodium mercaptoundecahydrododecaborane (BSH) as the 10B carriers, have been performed or are underway in Argentina, Japan, the US and Europe (e.g. 3-8). To date, the clinical results have shown a potential, albeit inconclusive, therapeutic advantage for this technique. Contributory translational studies have been carried out employing a variety of experimental models based on the implantation of tumor cells in normal tissue (e.g. 5).

  20. Electron microscopy study of radiation effects in boron carbide

    International Nuclear Information System (INIS)

    Stoto, T.

    1987-03-01

    Boron carbide is a disordered non-stoechiometric material with a strongly microtwinned polycristallyne microstructure. This ceramic is among the candidate materials for the first wall coating in fusion reactor and is used as a neutron absorber in the control rods of fast breeder reactors. The present work deals with the nature of radiation damage in this solid. Because of helium internal production, neutron irradiated boron carbide is affected by swelling and by a strong microcracking which can break up a pellet in fine powder. These processes are rather intensitive to the irradiation parameters (temperature, flux and even neutron spectrum). Transmission electron microscopy of samples irradiated by the fast neutrons of a reactor, the electrons of a high voltage electron microscope and of samples implanted with helium ions was used to understand the respective roles of helium and point defects in the processes of swelling and microcracking. The design of an irradiation chamber for helium implantation at controlled temperature from 600 to 1700 0 C was an important technical part of this work [fr

  1. Two-channel neutron boron meter

    International Nuclear Information System (INIS)

    Chen Yongqing; Yin Guowei; Chai Songshan; Deng Zhaoping; Zhou Bin

    1993-09-01

    The two-channel neutron boron meter is a continuous on-line measuring device to measure boron concentration of primary cooling liquid of reactors. The neutron-leakage-compensation method is taken in the measuring mechanism. In the primary measuring configuration, the mini-boron-water annulus and two-channel and central calibration loop are adopted. The calibration ring and constant-temperature of boron-water can be remotely controlled by secondary instruments. With the microcomputer data processing system the boron concentration is automatically measured and calibrated in on-line mode. The meter has many advantages such as high accuracy, fast response, multi-applications, high reliability and convenience

  2. Quantitative ion implantation

    International Nuclear Information System (INIS)

    Gries, W.H.

    1976-06-01

    This is a report of the study of the implantation of heavy ions at medium keV-energies into electrically conducting mono-elemental solids, at ion doses too small to cause significant loss of the implanted ions by resputtering. The study has been undertaken to investigate the possibility of accurate portioning of matter in submicrogram quantities, with some specific applications in mind. The problem is extensively investigated both on a theoretical level and in practice. A mathematical model is developed for calculating the loss of implanted ions by resputtering as a function of the implanted ion dose and the sputtering yield. Numerical data are produced therefrom which permit a good order-of-magnitude estimate of the loss for any ion/solid combination in which the ions are heavier than the solid atoms, and for any ion energy from 10 to 300 keV. The implanted ion dose is measured by integration of the ion beam current, and equipment and techniques are described which make possible the accurate integration of an ion current in an electromagnetic isotope separator. The methods are applied to two sample cases, one being a stable isotope, the other a radioisotope. In both cases independent methods are used to show that the implantation is indeed quantitative, as predicted. At the same time the sample cases are used to demonstrate two possible applications for quantitative ion implantation, viz. firstly for the manufacture of calibration standards for instrumental micromethods of elemental trace analysis in metals, and secondly for the determination of the half-lives of long-lived radioisotopes by a specific activity method. It is concluded that the present study has advanced quantitative ion implantation to the state where it can be successfully applied to the solution of problems in other fields

  3. Electrical energy per order and current efficiency for electrochemical oxidation of p-chlorobenzoic acid with boron-doped diamond anode.

    Science.gov (United States)

    Lanzarini-Lopes, Mariana; Garcia-Segura, Sergi; Hristovski, Kiril; Westerhoff, Paul

    2017-12-01

    Electrochemical oxidation (EO) is an advanced oxidation process for water treatment to mineralize organic contaminants. While proven to degrade a range of emerging pollutants in water, less attention has been given to quantify the effect of operational variables such applied current density and pollutant concentration on efficiency and energy requirements. Particular figures of merit were mineralization current efficiency (MCE) and electrical energy per order (E EO ). Linear increases of applied current exponentially decreased the MCE due to the enhancement of undesired parasitic reactions that consumed generated hydroxyl radical. E EO values ranged from 39.3 to 331.8 kW h m -3 order -1 . Increasing the applied current also enhanced the E EO due to the transition from kinetics limited by current to kinetics limited by mass transfer. Further increases in current did not influence the removal rate, but it raised the E EO requirement. The E EO requirement diminished when decreasing initial pollutant loading with the increase of the apparent kinetic rate because of the relative availability of oxidant per pollutant molecule in solution at a defined current. Oxidation by-products released were identified, and a plausible degradative pathway has been suggested. Copyright © 2017. Published by Elsevier Ltd.

  4. Breeding of Coenzyme Q10 Produced Strain by Low-Energy Ion Implantation and Optimization of Coenzyme Q10 Fermentation

    International Nuclear Information System (INIS)

    Xu Dejun; Zheng Zhiming; Wang Peng; Wang Li; Yuan Hang; Yu Zengliang

    2008-01-01

    In order to increase the production efficiency of coenzyme Q 10 , the original strain Agrobacterium tumefaciens ATCC 4452 was mutated by means of Nitrogen ions implantation. A mutant strain, ATX 12, with high contents of coenzyme Q 10 was selected. Subsequently, the conditions such as carbohydrate concentration, nitrogen source concentration, inoculum's size, seed age, aeration and temperature which might affect the production of CoQ 10 were investigated in detail. Under optimal conditions, the maximum concentration of the intracellular CoQ 10 reached 200.3 mg/L after 80 h fed-batch fermentation, about 245% increasing in CoQ 10 production after ion implantation, compared to the original strain. (ion beam bioengineering)

  5. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

    Science.gov (United States)

    Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

    2018-02-01

    This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

  6. Biological effects of implanted nuclear energy sources for artificial heart devices. Progress report, September 1, 1975--August 31, 1976

    International Nuclear Information System (INIS)

    Kallfelz, F.A.; Wentworth, R.A.; Cady, K.B.

    1976-01-01

    A total of sixty dogs were implanted with radioisotope-powered artificial heart systems producing radiation fluxes similar to that of plutonium-238, but having no associated heat, at levels of from one to seventy times the radiation flux expected from a 30-watt plutonium-238 source. Results from studies lasting up to 6 years after implantation indicate that these animals, and by inference human beings, may be able to tolerate the radiation flux from 30-watt 238 Pu power sources. Results of heat dissipation studies in calves indicate that it may be possible to induce a vascularized connective tissue capsule sufficient to dissipate 30 watts of additional heat from a surface area of approximately 500 cm sq., allowing a heat flux of 0.06 watts per cm sq

  7. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    International Nuclear Information System (INIS)

    Boucard, F.; Roger, F.; Chakarov, I.; Zhuk, V.; Temkin, M.; Montagner, X.; Guichard, E.; Mathiot, D.

    2005-01-01

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling

  8. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    Energy Technology Data Exchange (ETDEWEB)

    Boucard, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France)]. E-mail: Frederic.Boucard@silvaco.com; Roger, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Chakarov, I. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Zhuk, V. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Temkin, M. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Montagner, X. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Guichard, E. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Mathiot, D. [InESS, CNRS and Universite Louis Pasteur, 23 Rue du Loess, F67037 Strasbourg (France)]. E-mail: Daniel.Mathiot@iness.c-strasbourg.fr

    2005-12-05

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling.

  9. Study of the influence of air exposure on graphite implanted by low energy high density deuterium plasma

    International Nuclear Information System (INIS)

    Fernandez, V.; Bardon, J.; Palmari, J.P.; Grisolia, C.

    1990-01-01

    A study of the influence of air exposure on the content of Deuterium implanted graphite was done for different exposure durations and different gas exposures. Important reduction of the D 2 thermodesorbed is shown to result from the formation of deuterated compounds during the desorption, the total amount of deuterium desorbed remaining unchanged. Some informations on the mechanisms of the interactions can be obtained by the comparison of the different experiments

  10. The modification of LiTaO3 crystal by low-energy He-ion implantation

    International Nuclear Information System (INIS)

    Pang, L.L.; Wang, Z.G.; Jin, Y.F.; Yao, C.F.; Cui, M.H.; Sun, J.R.; Shen, T.L.; Wei, K.F.; Zhu, Y.B.; Sheng, Y.B.; Li, Y.F.

    2012-01-01

    Highlights: ► LiTaO 3 crystal was implanted by 250 keV He + . ► We report the surface and transmittance of LiTaO 3 change with the fluence and time. ► New phenomena (self-splitting, self-exfoliation, self-recovery) occurred. ► Evolvement of defects and the behavior of helium were discussed. - Abstract: The effects of He-ion implantation on the surface morphology and transmittance of LiTaO 3 single crystals are investigated. The samples were implanted with 250 keV He-ion at different fluences at room temperature. The results show that the surface morphology and transmittance of implanted samples strongly depend on the ion fluence and the time when the samples expose to the air up to 60 days. When the fluence is above 1.0 × 10 16 He + /cm 2 , the transmission spectra indicate that a high concentration of defects is created. 3D-profile images show that at the higher fluence a great many triangular stripes appear on the surface of the samples. After 60 days, the recovery of the transmittance occurs and varies with the fluence. For the sample at the fluence of 5.0 × 10 16 He + /cm 2 , the raised stripes on the surface evolve into narrow cracks. Regional exfoliation, however, occurs on the surface of the sample with the fluence of 1.0 × 10 17 He + /cm 2 . According to the experimental results and simulation of SRIM 2008 code, the evolvement of defects and the behavior of He are discussed.

  11. SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

    International Nuclear Information System (INIS)

    Magee, C.W.; Hockett, R.S.; Bueyueklimanli, T.H.; Abdelrehim, I.; Marino, J.W.

    2007-01-01

    Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxide affects the X j determination as well as B profile shape when SIMS analyses are conducted while fully oxidizing the analytical area. Nuclear techniques such as elastic recoil detection (ERD), nuclear reaction analysis (NRA), and high-resolution Rutherford backscattering spectrometry (HR-RBS), are known to provide a profile shape near the surface that is free of artifacts. Comparisons with SIMS analyses have shown that SIMS analyses without fully oxidizing the analytical area agree well with these techniques at sufficiently high concentrations (where the nuclear techniques are applicable). The ability to measure both the B profile and an oxide marker with this non-oxidizing SIMS technique also allows accurate positioning of the B profile with respect to the SiO 2 /Si interface. This SIMS analysis protocol has been used to study the differences in near-surface dopant distribution for plasma-based implants. This study specifically focuses on measuring near-surface profile shapes as well as total implant doses for ultra-shallow B implants in Si especially those made with high peak B concentrations

  12. Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

    Science.gov (United States)

    Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

  13. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction ...

  14. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Aggarwal, J.

    1997-01-01

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO 2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  15. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    high temperature reaction between elemental boron and car- bon to form B4C is .... cible was used as the container for the electrolyte and also acted as an anode. ... chosen as cathode due to its availability, low cost, ease of fabrication and ...

  16. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

    1980-09-01

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

  17. Aerolization During Boron Nanoparticle Multi-Component Fuel Group Burning Studies

    Science.gov (United States)

    2014-02-03

    overall energy density of the multi-component fuel mixture. Boron nanoparticle- doped multi-component hydrocarbon fuels represent a potential high...addressed, Boron nanoparticle- doped multi-component hydrocarbon fuels represent a potential high-efficiency, tactical fuel that could increase thrust...and micron-sized aluminum particles. Combustion and Flame 158(2): 354-368. Gan, Y., Y. S. Lim, and L. Qiao. 2012. Combustion of nanofluid fuels

  18. Boron-11 MRI and MRS of intact animals infused with a boron neutron capture agent

    International Nuclear Information System (INIS)

    Kabalka, G.W.; Davis, M.; Bendel, P.

    1988-01-01

    Boron neutron capture therapy (BNCT) depends on the delivery of boron-containing drugs to a targeted lesion. Currently, the verification and quantification of in vivo boron content is a difficult problem. Boron-11 spectroscopy was utilized to confirm the presence of a dimeric sulfhydryl dodecaborane BNCT agent contained in an intact animal. Spectroscopy experiments revealed that the decay time of transverse magnetization of the boron-11 spins was less than 1 ms which precluded the use of a 2DFT imaging protocol. A back-projection protocol was developed and utilized to generate the first boron-11 image of a BNCT agent in the liver of an intact Fisher 344 rat

  19. Recombination and photosensitivity centres in boron nitride irradiated with ions

    International Nuclear Information System (INIS)

    Kabyshev, A.; Konusov, F.; Lopatin, V.

    2001-01-01

    The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

  20. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    Science.gov (United States)

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  1. The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

    International Nuclear Information System (INIS)

    Sabirianov, Ildar F.; Brand, Jennifer I.; Fairchild, Robert W.

    2008-01-01

    Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% 10 B and 80% 11 B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)

  2. Preparation of boron-rich aluminum boride nanoparticles by RF thermal plasma

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Sooseok [Inha University, Department of Chemical Engineering and Regional Innovation Center for Environmental Technology of Thermal Plasma (Korea, Republic of); Matsuo, Jiro; Cheng, Yingying [Tokyo Institute of Technology, Department of Environmental Chemistry and Engineering (Japan); Watanabe, Takayuki, E-mail: watanabe@chemenv.titech.ac.jp [Kyushu University, Department of Chemical Engineering (Japan)

    2013-08-15

    Boron-rich compounds of AlB{sub 12} and AlB{sub 10} nanoparticles were synthesized by a radiofrequency thermal plasma. Aluminum and boron raw powders were evaporated in virtue of high enthalpy of the thermal plasma in upstream region, followed by the formation of aluminum boride nanoparticles in the tail region of plasma flame with rapid quenching. A high production rate of aluminum boride was confirmed by the X-ray diffraction measurement in the case of high input power, high boron content in raw material and helium inner gas. Polyhedral nanoparticles of 20.8 nm in mean size were observed by a transmission electron microscope. In the raw powder mixture of aluminum, titanium, and boron, titanium-boride nanoparticles were synthesized preferentially, because the Gibbs free energy for the boridation of titanium is lower than that of aluminum. Since the nucleation temperature of boron is higher than that of aluminum, the condensation of metal monomers onto boron nuclei results in the formation of boron-rich aluminum boride nanoparticles.

  3. Annealing behaviour of boron atoms implanted into polyethylene-terephtalate

    Czech Academy of Sciences Publication Activity Database

    Vacík, Jiří; Hnatowicz, Vladimír; Červená, Jarmila; Peřina, Vratislav; Popok, V.; Odzhaev, V.; Švorčík, V.; Rybka, V.; Arenholz, E.; Fink, D.

    166/167, - (2000), s. 637-640 ISSN 0168-583X R&D Projects: GA ČR GA203/99/1626; GA ČR GV202/97/K038; GA AV ČR KSK1010601 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.955, year: 2000

  4. Boron ion irradiation induced structural and surface modification of glassy carbon

    International Nuclear Information System (INIS)

    Kalijadis, Ana; Jovanović, Zoran; Cvijović-Alagić, Ivana; Laušević, Zoran

    2013-01-01

    The incorporation of boron into glassy carbon was achieved by irradiating two different types of targets: glassy carbon polymer precursor and carbonized glassy carbon. Targets were irradiated with a 45 keV B 3+ ion beam in the fluence range of 5 × 10 15 –5 × 10 16 ions cm −2 . For both types of targets, the implanted boron was located in a narrow region under the surface. Following irradiation, the polymer was carbonized under the same condition as the glassy carbon samples (at 1273 K) and examined by Raman spectroscopy, temperature programmed desorption, hardness and cyclic voltammetry measurements. Structural analysis showed that during the carbonization process of the irradiated polymers, boron is substitutionally incorporated into the glassy carbon structure, while for irradiated carbonized glassy carbon samples, boron irradiation caused an increase of the sp 3 carbon fraction, which is most pronounced for the highest fluence irradiation. Further analyses showed that different nature of boron incorporation, and thus changed structural parameters, are crucial for obtaining glassy carbon samples with modified mechanical, chemical and electrochemical properties over a wide range

  5. In vitro biocompatibility of titanium after plasma surface alloying with boron

    Energy Technology Data Exchange (ETDEWEB)

    Kaczmarek, Mariusz, E-mail: markacz@ump.edu.pl [Department of Immunology, Chair of Clinical Immunology, Poznan University of Medical Sciences, Rokietnicka 5D, 60-806 Poznan (Poland); Jurczyk, Mieczysława U. [Division Mother' s and Child' s Health, Poznan University of Medical Sciences, Polna 33, 60-535 Poznan (Poland); Miklaszewski, Andrzej [Institute of Materials Science and Engineering, Poznan University of Technology, Jana Pawla II 24, 61-138 Poznan (Poland); Paszel-Jaworska, Anna; Romaniuk, Aleksandra; Lipińska, Natalia [Department of Clinical Chemistry and Molecular Diagnostics, Poznan University of Medical Sciences, Przybyszewskiego 49, 60-355 Poznan (Poland); Żurawski, Jakub [Department of Immunobiochemistry, Chair of Biology and Environmental Sciences, Poznan University of Medical Sciences, Rokietnicka 8, 60-806 Poznan (Poland); Urbaniak, Paulina [Department of Cell Biology, Poznan University of Medical Sciences, Rokietnicka 5D, 60-806 Poznan (Poland); Jurczyk, Karolina [Department of Conservative Dentistry and Periodontology, Poznan University of Medical Sciences, Bukowska 70, 60-812 Poznan (Poland)

    2016-12-01

    Recently, the effect of different sizes of precursor powders during surface plasma alloying modification on the properties of titanium surface was studied. In this work we show in vitro test results of the titanium (α-Ti) after plasma surface alloying with boron (B). Ti-B nanopowders with 2 and 10 wt% B were deposited onto microcrystalline Ti substrate. The in vitro cytocompatibility of these biomaterials was evaluated and compared with a conventional microcrystalline Ti. During the studies, established cell line of human gingival fibroblasts and osteoblasts were cultured in the presence of tested materials, and its survival rate and proliferation activity were examined. For this purpose, MTT assay, flow cytometric and fluorescent microscopic evaluation were made. Biocompatibility tests carried out indicate that the Ti after plasma surface alloying with B could be a possible candidate for dental implants and other medicinal applications. Plasma alloying is a promising method for improving the properties of titanium, thus increasing the field of its applications. - Highlights: • this is first article carried out on the titanium after plasma surface alloying with different contents of boron; • microcrystalline titanium modified with boron changes the physicochemical features of conventional material; • Ti modified by boron is proper in terms of effects on survival and proliferative activity of cells of dental alveoli; • precursors with different content of boron in different ways influence the intensity and stability of cell growth;.

  6. Ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.

    1986-01-01

    It is the purpose of the present paper to give a review of surface alloy processing by ion implantation. However, rather than covering this vast subject as a whole, the survey is confined to a presentation of the microstructures that can be found in metal surfaces after ion implantation. The presentation is limited to alloys processed by ion implantation proper, that is to processes in which the alloy compositions are altered significantly by direct injection of the implanted ions. The review is introduced by a presentation of the processes taking place during development of the fundamental event in ion implantation - the collision cascade, followed by a summary of the various microstructures which can be formed after ion implantation into metals. This is compared with the variability of microstructures that can be achieved by rapid solidification processing. The microstructures are subsequently discussed in the light of the processes which, as the implantations proceed, take place during and immediately after formation of the individual collision cascades. These collision cascades define the volumes inside which individual ions are slowed down in the implanted targets. They are not only centres for vigorous agitation but also the sources for formation of excess concentrations of point defects, which will influence development of particular microstructures. A final section presents a selection of specific structures which have been observed in different alloy systems. (orig./GSCH)

  7. Ionic conductivity in BC3 type boron carbon nanolayers

    Directory of Open Access Journals (Sweden)

    Irina V. Zaporotskova

    2017-06-01

    Full Text Available Studies of ionic conductivity and structuresf in which it can be achieved are of great importance for the development of modern batteries. The use of new materials will allow avoiding such typical disadvantages of batteries as short service life, low capacity and leaks. In this article we present the results of our study of the ionic conductivity in boron carbon nanolayers. We have simulated three types of boron carbon nanolayers containing different amounts of boron. The studies have been carried out using the MNDO method within the framework of the molecular cluster model and the DFT method with the B3LYP functional and the 6–31G basis. To study the ion conduction process we have simulated vacancy formation for each type of the nanolayers and studied the energy and electronic characteristics of these processes. We show that 25% boron substitution is the most energetically favorable for vacancy formation. We have also simulated vacancy migration and determined the thermal conductivity as a function of temperature.

  8. Plasma source ion implantation

    International Nuclear Information System (INIS)

    Conrad, J.R.; Forest, C.

    1986-01-01

    The authors' technique allows the ion implantation to be performed directly within the ion source at higher currents without ion beam extraction and transport. The potential benefits include greatly increased production rates (factors of 10-1000) and the ability to implant non-planar targets without rastering or shadowing. The technique eliminates the ion extractor grid set, beam raster equipment, drift space and target manipulator equipment. The target to be implanted is placed directly within the plasma source and is biased to a large negative potential so that plasma ions gain energy as they accelerate through the potential drop across the sheath that forms at the plasma boundary. Because the sheath surrounds the target on all sides, all surfaces of the target are implanted without the necessity to raster the beam or to rotate the target. The authors have succeeded in implanting nitrogen ions in a silicon target to the depths and concentrations required for surface treatment of materials like stainless steel and titanium alloys. They have performed ESCA measurements of the penetration depth profile of a silicon target that was biased to 30 kV in a nitrogen discharge plasma. Nitrogen ions were implanted to a depth of 700A at a peak concentration of 30% atomic. The measured profile is quite similar to a previously obtained profile in titanium targets with conventional techniques

  9. Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

    2009-12-31

    The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

  10. Studies for the application of boron neutron capture therapy to the treatment of differentiated thyroid cancer

    International Nuclear Information System (INIS)

    Dagrosa, A.; Carpano, M.; Perona, M.; Thomasz, L.; Nievas, S.; Cabrini, R.; Juvenal, G.; Pisarev, M.

    2011-01-01

    The aim of these studies was to evaluate the possibility of treating differentiated thyroid cancer by BNCT. These carcinomas are well controlled with surgery followed by therapy with 131 I; however, some patients do not respond to this treatment. BPA uptake was analyzed both in vitro and in nude mice implanted with cell lines of differentiated thyroid carcinoma. The boron intracellular concentration in the different cell lines and the biodistribution studies showed the selectivity of the BPA uptake by this kind of tumor.

  11. Biological effects of implanted nuclear energy sources for artificial heart devices. Final report, September 1, 1968-May 31, 1979

    International Nuclear Information System (INIS)

    Kallfelz, F.A.

    1981-04-01

    This work involved a study of the biological effects of radiation from mock 30 watt plutonium-238 power sources in dogs. Dogs were implanted with radiation sources producing neutron and gamma radiation fluxes similar to that of plutonium-238, but having no associated heat, at levels of 1, 5, 15, and 70 times the radiation flux expected from a 30 watt plutonium-238 source. Times of observation varied from 0.25 to 8.0 years depending on experimental design or individual circumstances e.g. premature death from radiation related or non-radiation related causes. A number of clinico-pathologic determinations were performed on each dog at monthly intervals beginning five months before implantation and continuing until termination. Complete necropsy examinations were performed on all animals at termination. Very few abnormalities were observed in the clinical parameters measured except in the highest radiation flux groups (15X and 70X). The sperm count of males in the 15X and 70X groups demonstrated a rapid decrease with time. In the 5X group a gradual decrease in sperm count occurred with increasing time, while 1X males did not differ in sperm counts from controls. With the exception of one 15X dog which remained in the study for 6.5 years, all animals in the 15X and 70X groups were terminated at early time periods due to deterioration at the implant site characterized by abscessation and, not infrequently, tumor formation. The incidence of neoplasia increased with radiation source size. The results suggested that, although no statistically significant increases in tumor incidence were noted among groups, the incidence of neoplasia observed at autopsy tended to increase with increasing source size and radiation dose

  12. Modification of structure and properties of tin – fullerite films irradiated by boron ions

    International Nuclear Information System (INIS)

    Baran, L.V.

    2013-01-01

    By methods of raster electronic, atomic force and electronic force microscopy and X-ray diffraction the research of change of structure, phase composition and local electronic properties of the tin - fullerite films, subjected to implantation by B + ions (E = 80 keV, F = 5×10 17 ions/cm 2 ) are submitted. It is established, that as a result of boron ion implantation of two-layered tin - fullerite films, tin and fullerite interfusion on sues, that is the solid-phase interaction and as a result of which forms the heterophase with heterogeneous local electric properties. (authors)

  13. Nitrogen implantation in steel with an impulsive ion implanter

    International Nuclear Information System (INIS)

    Feugeas, J.N.; Gonzalez, C.O.; Hermida, J.; Nieto, M.; Peyronel, M.F.; Sanchez, G.

    1990-01-01

    This work describes the results of steel implantation with nitrogen, with a pulsed accelerator which provides a continuous ion energy spectrum giving a uniform profile of nitrogen without changing its operative conditions. (Author)

  14. Response of the oral mucosa to porphyrin mediated boron neutron capture therapy

    International Nuclear Information System (INIS)

    Morris, G.M.

    2003-01-01

    Pre-clinical studies are now in progress to develop boron neutron capture therapy (BNCT) modalities for the treatment of head and neck carcinomas. BNCT is a bimodal therapy which involves the administration of a boron-10 enriched compound, that accumulates preferentially in tumours, prior to irradiation with low energy neutrons. These neutrons are captured by boron-10 atoms to produce a highly localised radiation exposure. More recently, it has been demonstrated that various boronated porphyrins can target a variety of tumours. Of the porphyrins evaluated to date, copper tetracarboranylphenyl porphyrin (CuTCPH) is a strong candidate for potential clinical evaluation. It has extremely high specificity for a variety of tumour models. Therapeutic efficacy of CuTCPH mediated BNCT has been demonstrated in pre-clinical studies using the murine EMT-6 carcinoma model. In the present investigation the response of the oral mucosa to CuTCPH mediated boron neutron capture (BNC) irradiation was assessed using a standard rat model (ventral tongue). Single exposure irradiation was carried out on the thermal neutron beam at the Brookhaven Medical Research Reactor, at 3 days after the final injection of the boronated porphyrin. The impact of CuTCPH mediated BNC irradiation on oral mucosa at therapeutically effective exposure times, assessed using the ventral tongue model, was minimal. This was primarily due to the fact that blood boron levels (from CuTCPH) were very low at the time of irradiation. Analysis of the dose-effect data for CuTCPH gave a compound biological effectiveness (CBE) factor of 2.5. It can be concluded that, although, the CBE factor (calculated using blood boron concentrations) was relatively high, CuTCPH mediated BNC irradiation should not cause significant damage at clinically relevant radiation doses. This is because blood boron levels would be very low at the time of irradiation

  15. Isotopic evidence of boron in precipitation originating from coal burning in Asian continent

    International Nuclear Information System (INIS)

    Sakata, Masahiro; Natsumi, Masahiro; Tani, Yukinori

    2010-01-01

    The boron concentration and isotopic composition (δ 11 B) of precipitation collected from December 2002 to March 2006 at three sites on the Japan Sea coast were measured. Those sites have been considerably affected by the long-range transport of air pollutants from the Asian continent during winter and spring when the airflows from the Asian continent are predominant. The boron concentration in the precipitation increased primarily during winter whereas the δ 11 B decreased during winter or spring. It is assumed that this decrease in δ 11 B is not associated with a Rayleigh distillation process, because the previous δD values of the precipitation collected at a site on the Japan Sea coast did not decrease in the same manner. A weak correlation (r 2 =0.13-0.24, P 11 B and the nonsea-salt sulfate (nss-SO 4 2- )/B ratio at each site, suggesting that boron in the precipitation originate primarily from two sources. The first source, which is characterized by high δ 11 B and nss-SO 4 2- /B=0, is seawater. At the northern site, the enrichment factor for boron in the precipitation relative to seawater approached unity during winter. This implies that much of the boron in the precipitation is derived from unfractionated sea salts rather than gaseous boron evaporated from seawater. The second source is characterized by low δ 11 B and high nss-SO 4 2- /B ratio. Most of the nss-SO 4 2- in the precipitation originates from anthropogenic combustion activities in the Asian continent based on the previous model calculations. Coal accounts for a major portion of the total primary energy supply in China. Moreover, coal enriches boron and represents generally negative δ 11 B values. Hence, we propose that the emission of boron from coal burning is the most likely second source. Thus, boron isotopes may be useful as tracers of coal-burning plumes from the Asian continent. (author)

  16. The structure and dynamics of boron nitride nanoscrolls

    International Nuclear Information System (INIS)

    Perim, Eric; Galvao, Douglas S

    2009-01-01

    Carbon nanoscrolls (CNSs) are structures formed by rolling up graphene layers into a scroll-like shape. CNNs have been experimentally produced by different groups. Boron nitride nanoscrolls (BNNSs) are similar structures using boron nitride instead of graphene layers. In this paper we report molecular mechanics and molecular dynamics results for the structural and dynamical aspects of BNNS formation. Similarly to CNS, BNNS formation is dominated by two major energy contributions, the increase in the elastic energy and the energetic gain due to van der Waals interactions of the overlapping surface of the rolled layers. The armchair scrolls are the most stable configuration while zigzag scrolls are metastable structures which can be thermally converted to armchairs. Chiral scrolls are unstable and tend to evolve into zigzag or armchair configurations depending on their initial geometries. The possible experimental routes to produce BNNSs are also addressed.

  17. Biological effects of implanted nuclear energy sources for artificial heart devices. Progress report, September 1, 1974--August 31, 1975

    International Nuclear Information System (INIS)

    Kallfelz, F.A.; Wentworth, R.A.; Cady, K.B.

    1975-01-01

    Results are reported from a study of the biological effects of radiation from mock plutonium power sources in dogs and a study of the feasibility of a tissue heat sink for waste heat from such sources in calves. It is also designed to evaluate effects of heat and radiation from plutonium sources in calves. The work is part of a program to evaluate the use of plutonium as a power source for an artificial heart device. A total of 60 dogs have been implanted with mock plutonium sources (producing a similar radiation flux as plutonium but having no associated heat) at levels of from 1 to 70 times the expected radiation flux from a 30 watt plutonium source. Results up to 4.5 years after implantation indicate that mammals may be able to tolerate the radiation flux from such sources. Results in calves indicate that 30 watts of additional endogenous heat can be dissipated to a connective tissue covered heat exchanger with a surface area of 494 cm 2 providing a heat flux of 0.06 watts/cm 2 . (U.S.)

  18. Bragg-case synchrotron section topography of silicon implanted with high-energy protons and α particles

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Graeff, W.

    1997-01-01

    Back reflection section topography using white-beam synchrotron radiation has been applied for the investigation of silicon implanted with 1 and 1.6 MeV protons and 4.8 MeV α particles. The beam width was limited to 5 μm, and a series of spots in the vicinity of a centrally adjusted reflection were indexed and analysed. The back-reflection section pattern of implanted crystals usually exhibits fringes corresponding to the reflection from the surface and a series of fringes corresponding to the rear region of the shot-through layer, the destroyed layer and the bulk. The patterns were used for direct evaluation of ion ranges and thicknesses of the shot-through layer. The overall characteristics of the obtained patterns were successfully reproduced in simulations based on numerical integration of the Takagi-Taupin equations. The agreement between the simulation and experiment proves that the lattice-parameter depth-distribution profiles can be assumed to be proportional to interstitial-vacancy distributions obtained using the Monte Carlo method from the Biersack-Ziegler theory. The simulation also reproduced interference tails observed in some section patterns. It was found that these tails are caused by the ion-dose change along the beam and they were probably formed due to the interference between the radiation reflected from the bulk and those rays reflected by the rear region of the shot-through layer. (orig.)

  19. Hexagonal boron nitride and water interaction parameters

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yanbin; Aluru, Narayana R., E-mail: aluru@illinois.edu [Department of Mechanical Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  20. A boron nitride nanotube peapod thermal rectifier

    International Nuclear Information System (INIS)

    Loh, G. C.; Baillargeat, D.

    2014-01-01

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  1. A boron nitride nanotube peapod thermal rectifier

    Energy Technology Data Exchange (ETDEWEB)

    Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

    2014-06-28

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  2. High-pressure boron hydride phases

    International Nuclear Information System (INIS)

    Barbee, T.W. III; McMahan, A.K.; Klepeis, J.E.; van Schilfgaarde, M.

    1997-01-01

    The stability of boron-hydrogen compounds (boranes) under pressure is studied from a theoretical point of view using total-energy methods. We find that the molecular forms of boranes known to be stable at ambient pressure become unstable at high pressure, while structures with extended networks of bonds or metallic bonding are energetically favored at high pressures. If such structures are metastable on return to ambient pressure, they would be energetic as well as dense hydrogen storage media. An AlH 3 -like structure of BH 3 is particularly interesting in that it may be accessible by high-pressure diamond anvil experiments, and should exhibit both second-order structural and metal-insulator transitions at lower pressures. copyright 1997 The American Physical Society

  3. Development and evaluation of totally implantable ventricular assist system using a vibrating flow pump and transcutaneous energy transmission system with amorphous fibers.

    Science.gov (United States)

    Yambe, T; Hashimoto, H; Kobayashi, S; Sonobe, T; Naganuma, S; Nanka, S S; Matsuki, H; Yoshizawa, M; Tabayashi, K; Takayasu, H; Takeda, H; Nitta, S

    1997-01-01

    We have developed a vibrating flow pump (VFP) that can generate oscillated blood flow with a relatively high frequency (10-50 Hz) for a totally implantable ventricular assist system (VAS). To evaluate the newly developed VAS, left heart bypasses, using the VFP, were performed in chronic animal experiments. Hemodynamic parameters were recorded in a data recorder in healthy adult goats during an awake condition and analyzed in a personal computer system through an alternating-direct current converter. Basic performance of the total system with a transcutaneous energy transmission system were satisfactory. During left ventricular assistance with the VFP, Mayer wave fluctuations of hemodynamics were decreased in the power spectrum, the fractal dimensions of the hemodynamics were significantly decreased, and peripheral vascular resistance was significantly decreased. These results suggest that cardiovascular regulatory nonlinear dynamics, which mediate the hemodynamics, may be affected by left ventricular bypass with oscillated flow. The decreased power of the Mayer wave in the spectrum caused the limit cycle attractor of the hemodynamics and decreased peripheral resistance. These results suggest that this newly developed VAS is useful for the totally implantable system with unique characteristics that can control hemodynamic properties.

  4. SU-E-T-274: Radiation Therapy with Very High-Energy Electron (VHEE) Beams in the Presence of Metal Implants

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, C; Palma, B; Qu, B; Maxim, P; Loo, B; Bazalova, M [Department of Radiation Oncology, Stanford University, Stanford, CA (United States); Hardemark, B; Hynning, E [RaySearch Laboratories, Stockholm (Sweden)

    2014-06-01

    Purpose: To evaluate the effect of metal implants on treatment plans for radiation therapy with very high-energy electron (VHEE) beams. Methods: The DOSXYZnrc/BEAMnrc Monte Carlo (MC) codes were used to simulate 50–150MeV VHEE beam dose deposition and its effects on steel and titanium (Ti) heterogeneities in a water phantom. Heterogeneities of thicknesses ranging from 0.5cm to 2cm were placed at 10cm depth. MC was also used to calculate electron and photon spectra generated by the VHEE beams' interaction with metal heterogeneities. The original VMAT patient dose calculation was planned in Eclipse. Patient dose calculations with MC-generated beamlets were planned using a Matlab GUI and research version of RayStation. VHEE MC treatment planning was performed on water-only geometry and water with segmented prostheses (steel and Ti) geometries with 100MeV and 150MeV beams. Results: 100MeV PDD 5cm behind steel/Ti heterogeneity was 51% less than in the water-only phantom. For some cases, dose enhancement lateral to the borders of the phantom increased the dose by up to 22% in steel and 18% in Ti heterogeneities. The dose immediately behind steel heterogeneity decreased by an average of 6%, although for 150MeV, the steel heterogeneity created a 23% increase in dose directly behind it. The average dose immediately behind Ti heterogeneities increased 10%. The prostate VHEE plans resulted in mean dose decrease to the bowel (20%), bladder (7%), and the urethra (5%) compared to the 15MV VMAT plan. The average dose to the body with prosthetic implants was 5% higher than to the body without implants. Conclusion: Based on MC simulations, metallic implants introduce dose perturbations to VHEE beams from lateral scatter and backscatter. However, when performing clinical planning on a prostate case, the use of multiple beams and inverse planning still produces VHEE plans that are dosimetrically superior to photon VMAT plans. BW Loo and P Maxim received research support from

  5. SU-E-T-274: Radiation Therapy with Very High-Energy Electron (VHEE) Beams in the Presence of Metal Implants

    International Nuclear Information System (INIS)

    Jensen, C; Palma, B; Qu, B; Maxim, P; Loo, B; Bazalova, M; Hardemark, B; Hynning, E

    2014-01-01

    Purpose: To evaluate the effect of metal implants on treatment plans for radiation therapy with very high-energy electron (VHEE) beams. Methods: The DOSXYZnrc/BEAMnrc Monte Carlo (MC) codes were used to simulate 50–150MeV VHEE beam dose deposition and its effects on steel and titanium (Ti) heterogeneities in a water phantom. Heterogeneities of thicknesses ranging from 0.5cm to 2cm were placed at 10cm depth. MC was also used to calculate electron and photon spectra generated by the VHEE beams' interaction with metal heterogeneities. The original VMAT patient dose calculation was planned in Eclipse. Patient dose calculations with MC-generated beamlets were planned using a Matlab GUI and research version of RayStation. VHEE MC treatment planning was performed on water-only geometry and water with segmented prostheses (steel and Ti) geometries with 100MeV and 150MeV beams. Results: 100MeV PDD 5cm behind steel/Ti heterogeneity was 51% less than in the water-only phantom. For some cases, dose enhancement lateral to the borders of the phantom increased the dose by up to 22% in steel and 18% in Ti heterogeneities. The dose immediately behind steel heterogeneity decreased by an average of 6%, although for 150MeV, the steel heterogeneity created a 23% increase in dose directly behind it. The average dose immediately behind Ti heterogeneities increased 10%. The prostate VHEE plans resulted in mean dose decrease to the bowel (20%), bladder (7%), and the urethra (5%) compared to the 15MV VMAT plan. The average dose to the body with prosthetic implants was 5% higher than to the body without implants. Conclusion: Based on MC simulations, metallic implants introduce dose perturbations to VHEE beams from lateral scatter and backscatter. However, when performing clinical planning on a prostate case, the use of multiple beams and inverse planning still produces VHEE plans that are dosimetrically superior to photon VMAT plans. BW Loo and P Maxim received research support from

  6. High power accelerator-based boron neutron capture with a liquid lithium target and new applications to treatment of infectious diseases

    Energy Technology Data Exchange (ETDEWEB)

    Halfon, S. [Soreq NRC, Yavne 81800 (Israel); Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel)], E-mail: halfon@phys.huji.ac.il; Paul, M. [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Steinberg, D. [Biofilm Laboratory, Institute of Dental Sciences, Faculty of Dentistry, Hebrew University-Hadassah (Israel); Nagler, A.; Arenshtam, A.; Kijel, D. [Soreq NRC, Yavne 81800 (Israel); Polacheck, I. [Clinical Microbiology and Infectious Diseases, Hadassah-Hebrew University Medical Center (Israel); Srebnik, M. [Department of Medicinal Chemistry and Natural Products, School of Pharmacy, Hebrew University, Jerusalem 91120 (Israel)

    2009-07-15

    A new conceptual design for an accelerator-based boron neutron capture therapy (ABNCT) facility based on the high-current low-energy proton beam driven by the linear accelerator at SARAF (Soreq Applied Research Accelerator Facility) incident on a windowless forced-flow liquid-lithium target, is described. The liquid-lithium target, currently in construction at Soreq NRC, will produce a neutron field suitable for the BNCT treatment of deep-seated tumor tissues, through the reaction {sup 7}Li(p,n){sup 7}Be. The liquid-lithium target is designed to overcome the major problem of solid lithium targets, namely to sustain and dissipate the power deposited by the high-intensity proton beam. Together with diseases conventionally targeted by BNCT, we propose to study the application of our setup to a novel approach in treatment of diseases associated with bacterial infections and biofilms, e.g. inflammations on implants and prosthetic devices, cystic fibrosis, infectious kidney stones. Feasibility experiments evaluating the boron neutron capture effectiveness on bacteria annihilation are taking place at the Soreq nuclear reactor.

  7. SU-F-T-140: Assessment of the Proton Boron Fusion Reaction for Practical Radiation Therapy Applications Using MCNP6

    Energy Technology Data Exchange (ETDEWEB)

    Adam, D; Bednarz, B [University of Wisconsin, Madison, WI (United States)

    2016-06-15

    Purpose: The proton boron fusion reaction is a reaction that describes the creation of three alpha particles as the result of the interaction of a proton incident upon a 11B target. Theoretically, the proton boron fusion reaction is a desirable reaction for radiation therapy applications in that, with the appropriate boron delivery agent, it could potentially combine the localized dose delivery protons exhibit (Bragg peak) and the local deposition of high LET alpha particles in cancerous sites. Previous efforts have shown significant dose enhancement using the proton boron fusion reaction; the overarching purpose of this work is an attempt to validate previous Monte Carlo results of the proton boron fusion reaction. Methods: The proton boron fusion reaction, 11B(p, 3α), is investigated using MCNP6 to assess the viability for potential use in radiation therapy. Simple simulations of a proton pencil beam incident upon both a water phantom and a water phantom with an axial region containing 100ppm boron were modeled using MCNP6 in order to determine the extent of the impact boron had upon the calculated energy deposition. Results: The maximum dose increase calculated was 0.026% for the incident 250 MeV proton beam scenario. The MCNP simulations performed demonstrated that the proton boron fusion reaction rate at clinically relevant boron concentrations was too small in order to have any measurable impact on the absorbed dose. Conclusion: For all MCNP6 simulations conducted, the increase of absorbed dose of a simple water phantom due to the 11B(p, 3α) reaction was found to be inconsequential. In addition, it was determined that there are no good evaluations of the 11B(p, 3α) reaction for use in MCNPX/6 and further work should be conducted in cross section evaluations in order to definitively evaluate the feasibility of the proton boron fusion reaction for use in radiation therapy applications.

  8. Fretting-corrosion behavior in hip implant modular junctions: The influence of friction energy and pH variation.

    Science.gov (United States)

    Royhman, Dmitry; Patel, Megha; Runa, Maria J; Wimmer, Markus A; Jacobs, Joshua J; Hallab, Nadim J; Mathew, Mathew T

    2016-09-01

    Recently, there has been increasing concern in the orthopedic community over the use of hip implant modular devices due to an increasing number of reports of early failure, failure that has been attributed to fretting-corrosion at modular interfaces. Much is still unknown about the electrochemical and mechanical degradation mechanisms associated with the use of such devices. Accordingly, the purpose of our study was to develop a methodology for testing the fretting-corrosion behavior of modular junctions. A fretting-corrosion apparatus was used to simulate the fretting-corrosion conditions of a CoCrMo hip implant head on a Ti6Al4V hip implant stem. The device features two perpendicularly-loaded CoCrMo pins that articulated against a Ti6Al4V rod. A sinusoidal fretting motion was applied to the rod at various displacement amplitudes (25, 50, 100, 150 and 200μm) at a constant load of 200N. Bovine calf serum at two different pH levels (3.0 and 7.6) was used to simulate the fluid environment around the joint. Experiments were conducted in two modes of electrochemical control - free-potential and potentiostatic. Electrochemical impedance spectroscopy tests were done before and after the fretting motion to assess changes in corrosion kinetics. In free potential mode, differences were seen in change in potential as a function of displacement amplitude. In general, VDrop (the drop in potential at the onset of fretting), VFretting, (the average potential during fretting), ΔVFretting (the change in potential from the onset of fretting to its termination) and VRecovery (the change in potential from the termination of fretting until stabilization) appeared linear at both pH levels, but showed drastic deviation from linearity at 100μm displacement amplitude. Subsequent EDS analysis revealed a large number of Ti deposits on the CoCrMo pin surfaces. Potentiostatic tests at both pH levels generally showed increasing current with increasing displacement amplitude. Electrochemical

  9. Natural defects and defects created by ionic implantation in zinc tellurium

    International Nuclear Information System (INIS)

    Roche, J.P.; Dupuy, M.; Pfister, J.C.

    1977-01-01

    Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

  10. Nanopores creation in boron and nitrogen doped polycrystalline graphene: A molecular dynamics study

    Science.gov (United States)

    Izadifar, Mohammadreza; Abadi, Rouzbeh; Nezhad Shirazi, Ali Hossein; Alajlan, Naif; Rabczuk, Timon

    2018-05-01

    In the present paper, molecular dynamic simulations have been conducted to investigate the nanopores creation on 10% of boron and nitrogen doped polycrystalline graphene by silicon and diamond nanoclusters. Two types of nanoclusters based on silicon and diamond are used to investigate their effect for the fabrication of nanopores. Therefore, three different diameter sizes of the clusters with five kinetic energies of 10, 50, 100, 300 and 500 eV/atom at four different locations in boron or nitrogen doped polycrystalline graphene nanosheets have been perused. We also study the effect of 3% and 6% of boron doped polycrystalline graphene with the best outcome from 10% of doping. Our results reveal that the diamond cluster with diameter of 2 and 2.5 nm fabricates the largest nanopore areas on boron and nitrogen doped polycrystalline graphene, respectively. Furthermore, the kinetic energies of 10 and 50 eV/atom can not fabricate nanopores in some cases for silicon and diamond clusters on boron doped polycrystalline graphene nanosheets. On the other hand, silicon and diamond clusters fabricate nanopores for all locations and all tested energies on nitrogen doped polycrystalline graphene. The area sizes of nanopores fabricated by silicon and diamond clusters with diameter of 2 and 2.5 nm are close to the actual area size of the related clusters for the kinetic energy of 300 eV/atom in all locations on boron doped polycrystalline graphene. The maximum area and the average maximum area of nanopores are fabricated by the kinetic energy of 500 eV/atom inside the grain boundary at the center of the nanosheet and in the corner of nanosheet with diameters of 2 and 3 nm for silicon and diamond clusters on boron and nitrogen doped polycrystalline graphene.

  11. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

    International Nuclear Information System (INIS)

    Claverie, A.; Giles, L.F.; Omri, M.; Mauduit, B. de; Ben Assayag, G.; Mathiot, D.

    1999-01-01

    Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are the reasons for some similarities and many differences in defect types and thermal evolution depending on whether boron is implanted in crystalline or amorphous silicon. While rising many more questions, we propose a 'thermodynamical' vision of the nucleation and growth of clusters and extended defects and stress the interactions between these defects and the free Si self-interstitial atoms which surround them and are the source for TED in all cases. A pragmatic approach to the simulation of TED for various experimental conditions is proposed

  12. Shallow boron dopant on silicon An MD study

    International Nuclear Information System (INIS)

    Perez-Martin, A. Mari Carmen; Jimenez-Rodriguez, Jose J.; Jimenez-Saez, Jose Carlos

    2004-01-01

    Low energy boron bombardment of silicon has been simulated at room temperature by molecular dynamics (MD). Tersoff potential T3 was used in the simulation smoothly linked up with the universal potential. The boron-silicon (B-Si) interaction was simulated according to Tersoff potential for SiC but modified to account for the B-Si interaction. The algorithm can distinguish a B from a Si neighbour. Si-c, with (2 x 1) surface reconstruction, was bombarded with boron at 200 and 500 eV. These energies were initially chosen as good representative values of the low energy range. Reliable results require of a reasonable good statistic so that 1000-impact points were chosen uniformly distributed over a representative area of a 2 x 1 surface. The distribution of mean projected range for B is given. All kinds of point defect were looked for in a Si damaged target after bombardment. Energetically stable substitutional and interstitial configurations are presented and the relative appearances of the different types of interstitials, for both Si and B, are given. It is also determined the mean length of the distance to the first neighbours of defects

  13. A theoretical investigation of defects in a boron nitride monolayer

    International Nuclear Information System (INIS)

    Azevedo, Sergio; Kaschny, J R; Castilho, Caio M C de; Mota, F de Brito

    2007-01-01

    We have investigated, using first-principles calculations, the energetic stability and structural properties of antisites, vacancies and substitutional carbon defects in a boron nitride monolayer. We have found that the incorporation of a carbon atom substituting for one boron atom, in an N-rich growth condition, or a nitrogen atom, in a B-rich medium, lowers the formation energy, as compared to antisites and vacancy defects. We also verify that defects, inducing an excess of nitrogen or boron, such as N B and B N , are more stable in its reverse atmosphere, i.e. N B is more stable in a B-rich growth medium, while B N is more stable in a N-rich condition. In addition we have found that the formation energy of a C N , in a N-rich medium, and C B in a B-rich medium, present formation energies comparable to those of the vacancies, V N and V B , respectively

  14. Primary system boron dilution analysis

    International Nuclear Information System (INIS)

    Crump, R.J.; Naretto, C.J.; Borgen, R.A.; Rockhold, H.C.

    1978-01-01

    The results are presented for an analysis conducted to determine the potential paths through which nonborated water or water with insufficient boron concentration might enter the LOFT primary coolant piping system or reactor vessel to cause dilution of the borated primary coolant water. No attempt was made in the course of this analysis to identify possible design modifications nor to suggest changes in administrative procedures or controls

  15. Limitation to development and implantation of solar energy in Caceres : Normative for urban planning; Limitaciones al desarrollo y la implantacion de la energia solar en Caceres. Las normas del planeamiento urbano

    Energy Technology Data Exchange (ETDEWEB)

    Tejeiro, C. V.; Mendez, J. A. S.; Gutierrez, P. D. M.; Barrigon, J. M. M.

    2004-07-01

    The implantation of the solar energy implies the placing of elements, which can be visible from the facades and roofs. The negative effect on the landscape would be a delay for this implantation. Considering the architectural capital of the inhabited space of Extremadura, it is analysed the degree of sensibility of the town directives in their General Plans. It is studied the adaptability of these directives establishing: a) Zoning: to distinguish between the different styles, ages of the edification, etc. b) Aesthetic characteristics of the edification: specifying materials, colours, textures, etc. c) Set of partial measures of integration in the edification: showing possible accepted solutions. A table has been done where it is included all the picked up information. In general, it is concluded that the implantation of renewable energies would need additional points to the directives to fix the three previously mentioned aspects. (Author)

  16. The mechanism for the formation of boron ineffective zone and its effect on the properties of ultra low carbon bainitic steels

    International Nuclear Information System (INIS)

    Hsieh, Rongiuan; Wang, Shyichin; Liou, Horngyih.

    1993-01-01

    In the manufacturing of Ultra Low Carbon Bainitic(ULCB) steels, boron is a prerequisite alloying element to promote the desired bainitic transformation. In order to obtain this hardenability effect, boron must be in solution and segregate to austenite grain boundaries and thus decrease the contribution of boundary interfacial energy to ferrite nucleation. During the development of ULCB steels in CSC, a small boron ineffective zone was sometimes found at the center of steel plates. From EPMA and boron autoradiograph analysis, it was found that the formation of this boron ineffective zone was due to center line segregation of inclusions which strongly combined with boron and formed a boron free zone in its vicinity. The microstructure of the boron ineffective zone was conventional ferrite with strength much lower than that of its surrounding bainite. This resulted in the occurrence of separations (splits) in tensile and impact specimens. Also, it was found that the hydrogen induced cracking (HIC) has a propensity to propagate along the boron ineffective zone. in welding y-groove tests, a higher cold cracking sensitivity at this boron ineffective zone was also found

  17. Borides and vitreous compounds sintered as high-energy fuels

    International Nuclear Information System (INIS)

    Mota, J.M.; Abenojar, J.; Martinez, M.A.; Velasco, F.; Criado, A.J.

    2004-01-01

    Boron was chosen as fuel in view of its excellent thermodynamic values for combustion, as compared to traditional fuels. The problem of the boron in combustion is the formation of a surface layer of oxide, which delays the ignition process, reducing the performance of the rocket engine. This paper presents a high-energy fuel for rocket engines. It is composed of sintered boron (borides and carbides and vitreous compounds) with a reducing chemical agent. Borides and boron carbide were prepared since the combustion heat of the latter is similar to that of the amorphous boron (in: K.K. Kuo (Ed.), Boron-Based Solid Propellant and Solid Fuel, Vol. 427, CRC Press, Boca Raton, FL, 1993). Several chemical reducing elements were used, such as aluminum, magnesium, and coke. As the raw material for boron, different compounds were used: amorphous boron, boric acid and boron oxide

  18. Carmustine Implant

    Science.gov (United States)

    ... works by slowing or stopping the growth of cancer cells in your body. ... are pregnant, plan to become pregnant, or are breast-feeding. If you become pregnant while receiving carmustine implant, call your doctor. Carmustine may harm the fetus.

  19. Cochlear Implants

    Science.gov (United States)

    ... NIDCD A cochlear implant is a small, complex electronic device that can help to provide a sense ... Hearing Aids Retinitis Pigmentosa - National Eye Institute Telecommunications Relay Services Usher Syndrome Your Baby's Hearing Screening News ...

  20. Removal of boron (B) from waste liquors.

    Science.gov (United States)

    Jiang, J Q; Xu, Y; Simon, J; Quill, K; Shettle, K

    2006-01-01

    This paper explores the use of electrocoagulation to remove boron from waste effluent in comparison with alum coagulation. In treating model test wastes, greater boron removals were achieved with electrocoagulation at low doses than conventional alum coagulation when reaction was undertaken for the same conditions (pH 8.5, and initial boron concentration was 500 mg/L). Al electrocoagulation can achieve good boron removal performance (68.3%) at a dose of 2.1 (as molar ratio of Al:B, and for current density of 62.1 A/m2), while alum coagulation can only achieve the maximum boron removal of 56% at a dose of 2.4. Also, Al electrocoagulation can remove 15-20% more boron than alum coagulation for the same dose compared in the treatment of both model test wastes and industry effluent. The estimation of running costs shows that to achieve 75% boron removal from industry waste effluent, i.e. removing 150 g of boron from 1 m3 of effluent, electrocoagulation was 6.2 times cheaper than alum coagulation. The economic advantage of electrocoagulation in the treatment of boron-containing waste effluent is thus significant.