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Sample records for emitting quantum-dot heterostructures

  1. Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

    KAUST Repository

    Han, Shikui

    2017-07-04

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn -WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.

  2. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  3. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  4. Synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures for highly efficient green quantum dot light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Han, Shikui; Tan, Chaoliang; Zhang, Xiao; Chen, Junze; Huang, Ying; Chen, Bo; Luo, Zhimin; Ma, Qinglang; Sindoro, Melinda; Zhang, Hua [Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore (Singapore); Yang, Xuyong [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Zhu, Yihan; Han, Yu [Advanced Membranes and Porous Materials Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal (Saudi Arabia); Zhang, Hao; Li, Hai; Huang, Xiao; Huang, Wei [Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech) (China); Qi, Xiaoying [Singapore Institute of Manufacturing Technology, Singapore (Singapore); Sun, Xiao Wei [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Dept. of Electrical and Electronic Engineering, College of Engineering, Southern Univ. of Science and Technology, Nanshan, Shenzhen, Guangdong (China)

    2017-08-21

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO{sub n} nanomaterials. The WO{sub n}-WX{sub 2} heterostructures are composed of WO{sub 2.9} nanoparticles (NPs) or WO{sub 2.7} nanowires (NWs) grown together with single- or few-layer WX{sub 2} nanosheets (NSs). As a proof-of-concept application, the WO{sub n}-WX{sub 2} heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO{sub 2.9} NP-WSe{sub 2} NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. All-Quantum-Dot Infrared Light-Emitting Diodes

    KAUST Repository

    Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H.; Ahmed, Osman S.; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport

  6. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  7. White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

    2007-01-01

    In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

  8. Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

    International Nuclear Information System (INIS)

    Birman, Joseph L.; Huong, Nguyen Que

    2007-01-01

    The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

  9. Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

    KAUST Repository

    Han, Shikui; Yang, Xuyong; Zhu, Yihan; Tan, Chaoliang; Zhang, Xiao; Chen, Junze; Huang, Ying; Chen, Bo; Luo, Zhimin; Ma, Qinglang; Sindoro, Melinda; Zhang, Hao; Qi, Xiaoying; Li, Hai; Huang, Xiao; Huang, Wei; Sun, Xiao Wei; Han, Yu; Zhang, Hua

    2017-01-01

    .7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a

  10. Improved emission spectrum from quantum dot superluminescent light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li, L.H.; Rossetti, M.; Fiore, A. [Institute of Photonics and Quantum Electronics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland); Occhi, L.; Velez, C. [EXALOS AG, Technoparkstrasse 1, 8005 Zuerich (Switzerland)

    2006-12-15

    The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. All-Quantum-Dot Infrared Light-Emitting Diodes

    KAUST Repository

    Yang, Zhenyu

    2015-12-22

    © 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

  12. A fabrication guide for planar silicon quantum dot heterostructures

    Science.gov (United States)

    Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

    2018-04-01

    We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

  13. Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

    Energy Technology Data Exchange (ETDEWEB)

    Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

    2008-07-01

    Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

  14. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    DEFF Research Database (Denmark)

    Hu, Yongjie; Churchill, Hugh; Reilly, David

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...

  15. Development of an eight-band theory for quantum dot heterostructures

    NARCIS (Netherlands)

    Pokatilov, E.P.; Fonoberov, V.A.; Fomin, V.; Devreese, J.T.

    2001-01-01

    We derive a nonsymmetrized eight-band effective-mass Hamiltonian for quantum dot heterostructures (QDH's) in Burt's envelope-function representation. The 8*8 radial Hamiltonian and the boundary conditions for the Schrodinger equation are obtained for spherical QDH's. Boundary conditions for

  16. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  17. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  18. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  19. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

    2016-01-01

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  20. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun

    2016-08-16

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  1. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    Energy Technology Data Exchange (ETDEWEB)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  2. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-01-01

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

  3. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  4. Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices

    International Nuclear Information System (INIS)

    Song, Hongjoo; Lee, Seonghoon

    2007-01-01

    We produced core-shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method-an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device

  5. Simple process of hybrid white quantum dot/organic light-emitting diodes by using quantum dot plate and fluorescence

    Science.gov (United States)

    Lee, Ho Won; Lee, Ki-Heon; Lee, Jae Woo; Kim, Jong-Hoon; Yang, Heesun; Kim, Young Kwan

    2015-02-01

    In this work, the simple process of hybrid quantum dot (QD)/organic light-emitting diode (OLED) was proposed to apply a white illumination light by using QD plate and organic fluorescence. Conventional blue fluorescent OLEDs were firstly fabricated and then QD plates of various concentrations, which can be controlled of UV-vis absorption and photoluminescence spectrum, were attached under glass substrate of completed blue devices. The suggested process indicates that we could fabricate the white device through very simple process without any deposition of orange or red organic emitters. Therefore, this work would be demonstrated that the potential simple process for white applications can be applied and also can be extended to additional research on light applications.

  6. Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

    NARCIS (Netherlands)

    Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

    2006-01-01

    A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

  7. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

    2012-01-01

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  8. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

    Science.gov (United States)

    Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

  9. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  10. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  11. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-01

    In this work, we prepared CdTe quantum dots, and series of Cd1-xMnxTe-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd1-xMnxTe-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd1-xMnxTe-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  12. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots.

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-02

    In this work, we prepared CdTe quantum dots, and series of Cd 1-x Mn x Te-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn 2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd 1-x Mn x Te-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd 1-x Mn x Te-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  13. Modulation response of quantum dot nanolight-emitting-diodes exploiting purcell-enhanced spontaneous emission

    DEFF Research Database (Denmark)

    Skovgård, Troels Suhr; Gregersen, Niels; Lorke, Michael

    2011-01-01

    The modulation bandwidth for a quantum dot light-emitting device is calculated using a detailed model for the spontaneous emission including the optical and electronic density-of-states. We show that the Purcell enhancement of the spontaneous emission rate depends critically on the degree...... of inhomogeneous broadening relative to the cavity linewidth and can improve the modulation speed only within certain parameter regimes....

  14. InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2003-01-01

    -dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

  15. Modulation response, mixed-mode oscillations and chaotic spiking in quantum dot light emitting diode

    International Nuclear Information System (INIS)

    Al Husseini, Hussein B.; Al Naimee, Kais A.; Al Khursan, Amin H.; Abdalah, Sora F.; Khedir, Ali H.; Meucci, Riccardo; Arecchi, F. Tito

    2015-01-01

    In this work quantum dot light emitting diode (QD-LED) was modeled in a dimensionless rate equations system where it is not done earlier. The model was examined first under bias current without any external perturbation where it exhibits chaotic phenomena since the model has multi-degrees of freedom. Then, it is perturbed by both small signal and direct current modulations (DCM), separately. The system exhibits mixed-mode oscillations (MMOs) under DCM. This behavior was reasoned to continuous states of two dimensional wetting layer (WL) which works as a reservoir to quantum dot (QD) states. QD capture was the dominant rate controlling the dynamic behavior in QD-LED. The nonlinear dynamic behavior of our model is compared very well to the experimental observations in the QD-LED

  16. Electrical aging effect of ZnS based quantum dots for white light-emitting diodes

    Science.gov (United States)

    Kim, Yohan; Ippen, Christian; Greco, Tonino; Jang, Ilwan; Park, Sungkyu; Oh, Min Suk; Han, Chul Jong; Lee, Jeongno; Wedel, Armin; Kim, Jiwan

    2014-03-01

    The present work reports cadmium-free colloidal ZnS:Al quantum dot (QD) based white quantum dot light-emitting diodes (QD-LEDs). The device was fabricated with a structure of ITO/PEDOT:PSS/PVK/QDs/TPBi/LiF/Al using synthesized ZnS:Al QDs which has 393 nm of peak wavelength and sub peaks in visible wavelength. White emission with high color rending index (CRI) was achieved by the combination of blue emission from PVK and ZnS:Al QDs, electroplex emission at the interface between PVK and ZnS:Al QDs, and Al traps/defects emission, which are controlled by electrical aging effect. The characteristic of our device shows the potential for spectrum tunable and Cd-free white QD-LEDs in the near future.

  17. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

  18. Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

    2009-05-01

    The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

  19. Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Tieqiang [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China)

    2016-08-08

    High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

  20. Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

    International Nuclear Information System (INIS)

    Wang, Peng; Bai, Xue; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu; Zhang, Tieqiang

    2016-01-01

    High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

  1. Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

    DEFF Research Database (Denmark)

    Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo

    2017-01-01

    Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach...

  2. All-solution processed composite hole transport layer for quantum dot light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaoli [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Synergetic Innovation Center of Chemical Science and Engineering, Tianjin (China); Dai, Haitao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Zhao, Junliang; Wang, Shuguo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Sun, Xiaowei [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, Tangchang Road 1088, Shenzhen, Guangdong 518055 (China)

    2016-03-31

    In the present work, poly-TPD and TCTA composite hole transport layer (HTL) was employed in solution processed CdSe/ZnS quantum dot light emitting diodes (QLEDs). As the doping level of TCTA can determine the carriers transport efficiency of HTL, the proper mixing ratio of TCTA and poly-TPD should be found to optimize the performance of composite HTL for QLEDs. The doping of poly-TPD by low TCTA content can make its HOMO level lower and then reduce the energy barrier height from HTL to quantum dots (QDs), whereas the doping of poly-TPD by the concentrated TCTA results in the degraded performance of QLEDs due to its decreased hole transport mobility. By using the optimized composition with poly-TPD:TCTA (3:1) as the hole transport layer, the luminescence of the device exhibits about double enhancement compared with that of poly-TPD based device. The improvement of luminescence is mainly attributed to the lower energy barrier of hole injection. The Förster resonant energy transfer (FRET) mechanism in the devices was investigated through theoretical and experimental analysis and the results indicate that the TCTA doping makes no difference on FRET. Therefore, the charge injection mechanism dominates the improved performance of the devices. - Highlights: • Quantum dot light emitting diodes (QLEDs) were fabricated by all solution method. • The performance of QLEDs was optimized by varying the composite hole transport layer. • The blend HTL could promote hole injection by optimizing HOMO levels. • The energy transfer mechanism was analyzed by studying Förster resonant energy transfer process.

  3. Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

    Science.gov (United States)

    Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

    2017-08-01

    Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

  4. Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

    International Nuclear Information System (INIS)

    Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

    2014-01-01

    A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

  5. Fully Transparent Quantum Dot Light-Emitting Diode with a Laminated Top Graphene Anode.

    Science.gov (United States)

    Yao, Li; Fang, Xin; Gu, Wei; Zhai, Wenhao; Wan, Yi; Xie, Xixi; Xu, Wanjin; Pi, Xiaodong; Ran, Guangzhao; Qin, Guogang

    2017-07-19

    A new method to employ graphene as top electrode was introduced, and based on that, fully transparent quantum dot light-emitting diodes (T-QLEDs) were successfully fabricated through a lamination process. We adopted the widely used wet transfer method to transfer bilayer graphene (BG) on polydimethylsiloxane/polyethylene terephthalate (PDMS/PET) substrate. The sheet resistance of graphene reduced to ∼540 Ω/□ through transferring BG for 3 times on the PDMS/PET. The T-QLED has an inverted device structure of glass/indium tin oxide (ITO)/ZnO nanoparticles/(CdSSe/ZnS quantum dots (QDs))/1,1-bis[(di-4-tolylamino)phenyl] cyclohexane (TAPC)/MoO 3 /graphene/PDMS/PET. The graphene anode on PDMS/PET substrate can be directly laminated on the MoO 3 /TAPC/(CdSSe/ZnS QDs)/ZnO nanoparticles/ITO/glass, which relied on the van der Waals interaction between the graphene/PDMS and the MoO 3 . The transmittance of the T-QLED is 79.4% at its main electroluminescence peak wavelength of 622 nm.

  6. The different physical origins of 1/f noise and superimposed RTS noise in light-emitting quantum dot diodes

    NARCIS (Netherlands)

    Belyakov, A.V.; Vandamme, L.K.J.; Perov, M.Y.; Yakimov, A.V.

    2003-01-01

    Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background

  7. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.

    2001-01-01

    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  8. External modes in quantum dot light emitting diode with filtered optical feedback

    International Nuclear Information System (INIS)

    Al Husseini, Hussein B.; Al Naimee, Kais A.; Al-Khursan, Amin H.; Khedir, Ali. H.

    2016-01-01

    This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to a coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.

  9. Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

    Directory of Open Access Journals (Sweden)

    Fengbing Wu

    2012-01-01

    Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

  10. Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

    International Nuclear Information System (INIS)

    Wu, F.; Dawei, Z.; Shuzhen, S.; Yiming, Z.; Songlin, Z.; Jian, X.

    2012-01-01

    We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nano crystal QDs can be tailored by varying the nano crystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

  11. Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

    Science.gov (United States)

    Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

    2017-11-01

    All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

  12. Improvement in luminance of light-emitting diode using InP/ZnS quantum dot with 1-dodecanethiol ligand

    Science.gov (United States)

    Fukuda, Takeshi; Sasaki, Hironao

    2018-03-01

    We present the synthesis protocol of a red emissive InP/ZnS quantum dot with a 1-dodecanthiol ligand and its application to a quantum dot light-emitting diode. The ligand change from oleylamine to 1-dodecanthiol, which were connected around the InP/ZnS quantum dot, was confirmed by Fourier-transform infrared spectroscopy and thermal analysis. The absorption peak was blue-shifted by changing 1-dodecanthiol ligands from oleylamine ligands to prevent the unexpected nucleation of the InP core. In addition, the luminance of the light-emitting device was improved by using the InP/ZnS quantum dot with 1-dodecanthiol ligands, and the maximum current efficiency of 7.2 × 10-3 cd/A was achieved. The 1-dodecanthiol ligand is often used for capping to reduce the number of surface defects and/or prevent unexpected core growth, resulting in reduced Auger recombination. This result indicates that 1-dodecanthiol ligands prevent the deactivation of excitons while injecting carriers by applying a voltage, resulting in a high luminance efficiency.

  13. Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

    Science.gov (United States)

    Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

    2017-11-01

    Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

  14. Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong-Hoon; Lee, Ki-Heon; Jo, Dae-Yeon; Yang, Heesun, E-mail: hyang@hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Lee, Yangjin; Hwang, Jun Yeon [Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-905 (Korea, Republic of)

    2014-09-29

    Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In{sub 1−x}−Ga{sub x}−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.

  15. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

    2011-01-01

    peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

  16. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng

    2011-05-01

    InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

  17. Improving lumen maintenance by nanopore array dispersed quantum dots for on-chip light emitting diodes

    Science.gov (United States)

    Chen, Quan; Yang, Fan; Wan, Renzhuo; Fang, Dong

    2017-12-01

    The temperature stability of quantum dots (QDs), which is crucial for integrating into high power light-emitting diodes (LEDs) in the on-chip configuration, needs to be further improved. In this letter, we report warm white LEDs, where CdSe/ZnS nanoparticles were incorporated into a porous anodic alumina (PAA) matrix with a chain structure by the self-assembly method. Experiments demonstrate that the QD concentration range in toluene solvent from 1% mg/μl to 1.2% mg/μl in combination with the PAA matrix shows the best luminous property. To verify the reliability of the as-prepared device, a comparison experiment was conducted. It indicates excellent lumen maintenance of the light source and less chromaticity coordinate shift under accelerated life testing conditions. Experiments also prove that optical depreciation was only up to 4.6% of its initial value after the 1500 h aging test at the junction temperature of 76 °C.

  18. Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

    Science.gov (United States)

    Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

    We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

  19. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-01

    A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  20. Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

    Science.gov (United States)

    Das, Subhasis; Dhar, S.

    2017-03-01

    The ground state exciton binding energies (EBE) of heavy hole excitons in GaAs1-x-yBixNy - GaAs spherical quantum dots (QD) are calculated using a variational approach under 1s hydrogenic wavefunctions within the framework of effective mass approximation. Both the nitrogen and the bismuth content in the material are found to affect the binding energy, in particular for larger nitrogen content and lower dot radii. Calculations also show that the ground state exciton binding energies of heavy holes increase more at smaller dot sizes as compared to that for the light hole excitons.

  1. Electron and hole spectrum in InAs quantum dot renormalized by InAs/GaAs heterostructure deformation

    International Nuclear Information System (INIS)

    Dan'kiv, O.O.; Peleshchak, R.M.

    2005-01-01

    Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot occurring in a self-consistent strain field created by an array of coherently stressed quantum dots. A method of taking into account the lattice mismatch at the quantum dot-matrix interface is proposed that allows for the dependence of the mismatch parameter on the quantum dot size and the matrix layer thickness. It is shown that the internal elastic strain arising at the quantum dot-matrix interface influences the energy spectrum of electrons more significantly than the spectrum of holes [ru

  2. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  3. Quantum dots

    International Nuclear Information System (INIS)

    Kouwenhoven, L.; Marcus, C.

    1998-01-01

    Quantum dots are man-made ''droplets'' of charge that can contain anything from a single electron to a collection of several thousand. Their typical dimensions range from nanometres to a few microns, and their size, shape and interactions can be precisely controlled through the use of advanced nanofabrication technology. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. Indeed, quantum dots exemplify an important trend in condensed-matter physics in which researchers study man-made objects rather than real atoms or nuclei. As in an atom, the energy levels in a quantum dot become quantized due to the confinement of electrons. With quantum dots, however, an experimentalist can scan through the entire periodic table by simply changing a voltage. In this article the authors describe how quantum dots make it possible to explore new physics in regimes that cannot otherwise be accessed in the laboratory. (UK)

  4. Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

    Science.gov (United States)

    Liu, Xiangkai; Zhao, Shuangyi; Gu, Wei; Zhang, Yuting; Qiao, Xvsheng; Ni, Zhenyi; Pi, Xiaodong; Yang, Deren

    2018-02-14

    Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm 2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.

  5. White light emitting device based on single-phase CdS quantum dots

    Science.gov (United States)

    Li, Feng; Nie, Chao; You, Lai; Jin, Xiao; Zhang, Qin; Qin, Yuancheng; Zhao, Feng; Song, Yinglin; Chen, Zhongping; Li, Qinghua

    2018-05-01

    White light emitting diodes (WLEDs) based on quantum dots (QDs) are emerging as robust candidates for white light sources, however they are suffering from the problem of energy loss resulting from the re-absorption and self-absorption among the employed QDs of different peak wavelengths. It still remains a challenging task to construct WLEDs based on single-phase QD emitters. Here, CdS QDs with short synthesis times are introduced to the fabrication of WLEDs. With a short synthesis time, on one hand, CdS QDs with a small diameter with blue emission can be obtained. On the other hand, surface reconstruction barely has time to occur, and the surface is likely defect-ridden, which enables the existence of a broad emission covering the range of green, yellow and red regions. This is essential for the white light emission of CdS QDs, and is very important for WLED applications. The temporal evolution of the PL spectra for CdS QDs was obtained to investigate the influence of growth time on the luminescent properties. The CdS QDs with a growth time of 0.5 min exhibited a colour rendering index (CRI) of 79.5 and a correlated colour temperature (CCT) of 6238 K. With increasing reaction time, the colour coordinates of the CdS QDs will move away from the white light region in the CIE 1931 chromaticity diagram. By integrating the as prepared white light emission CdS QDs with a violet GaN chip, WLEDs were fabricated. The fabricated WLEDs exhibited a CRI of 87.9 and a CCT of 4619 K, which satisfy the demand of general illumination. The luminous flux and the luminous efficiency of the fabricated WLEDs, being less advanced than current commercial white light sources, can be further improved, meaning there is a need for much more in-depth studies on white light emission CdS QDs.

  6. Theory of few photon dynamics in light emitting quantum dot devices

    Science.gov (United States)

    Carmele, Alexander; Richter, Marten; Sitek, Anna; Knorr, Andreas

    2009-10-01

    We present a modified cluster expansion to describe single-photon emitters in a semiconductor environment. We calculate microscopically to what extent semiconductor features in quantum dot-wetting layer systems alter the exciton and photon dynamics in comparison to the atom-like emission dynamics. We access these systems by the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we show that the amplitude of vacuum Rabi flops determines the number of electrons in the quantum dot.

  7. Quantum Dots

    Science.gov (United States)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  8. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

    2012-07-23

    : Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

  9. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

    Science.gov (United States)

    Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

    2016-12-02

    A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W -1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W -1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W -1 to 1915 A W -1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

  10. VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

    Science.gov (United States)

    Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki; Sogawa, Tetsuomi

    2012-06-13

    We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

  11. Emulsion Synthesis of Size-Tunable CH3NH3PbBr3 Quantum Dots: An Alternative Route toward Efficient Light-Emitting Diodes.

    Science.gov (United States)

    Huang, Hailong; Zhao, Fangchao; Liu, Lige; Zhang, Feng; Wu, Xian-gang; Shi, Lijie; Zou, Bingsuo; Pei, Qibing; Zhong, Haizheng

    2015-12-30

    We report a facile nonaqueous emulsion synthesis of colloidal halide perovskite quantum dots by controlled addition of a demulsifier into an emulsion of precursors. The size of resulting CH3NH3PbBr3 quantum dots can be tuned from 2 to 8 nm by varying the amount of demulsifier. Moreover, this emulsion synthesis also allows the purification of these quantum dots by precipitation from the colloidal solution and obtains solid-state powder which can be redissolved for thin film coating and device fabrication. The photoluminescence quantum yields of the quantum dots is generally in the range of 80-92%, and can be well-preserved after purification (∼80%). Green light-emitting diodes fabricated comprising a spin-cast layer of the colloidal CH3NH3PbBr3 quantum dots exhibited maximum current efficiency of 4.5 cd/A, power efficiency of 3.5 lm/W, and external quantum efficiency of 1.1%. This provides an alternative route toward high efficient solution-processed perovskite-based light-emitting diodes. In addition, the emulsion synthesis is versatile and can be extended for the fabrication of inorganic halide perovskite colloidal CsPbBr3 nanocrystals.

  12. The performance of quantum dots-based white light-emitting diodes

    Science.gov (United States)

    Chen, Kuan-Lin; Chung, Shu-Ru

    2017-08-01

    Recently, the investigation of quantum dots (QDs) as a color converter for white light-emitting diodes (WLEDs) application has attracted a great deal of attention. Because the narrow emission wavelength of QDs can be controlled by their particle sizes and compositions, which is facilitated to improve the color gamut of display as well as color rendering index (CRI) and the correlated color temperature (CCT) of WLEDs. In a typical commercially available LCD display, the color gamut is approximately to 75 % which is defined by the National Television System Committee (NTSC). In order to enhance NTSC, the full width at half-maximum (FWHM) of color converter should be less than 30 nm. Therefore, the QDs are the best choice for display application due to the FWHM of QDs is meet the demand of display application. In this study, the hot injection method with one-pot process is used to synthesis of colloidal ternary ZnCdSe green (G-) and red-emission (R-) QDs with a narrow emission wavelength around 537 and 610 nm. By controlling the complex reagents-stearic acid (SA) and lauric acid (LA), high performance of G- and R-QDs can be prepared. The quantum yields (QYs), particle sizes and FWHM for G- and R-QDs are 70, 30 %, 3.2 +/- 0.5, 4.1 +/- 0.5 nm and 25, 26 nm, respectively. In order to explore the performance of QDs-based WLEDs, mixing ratios effect between G-QD and R-QD are studied and the WLED is packed as conformal-type. Different ratios of R-QD and G-QD (1:10, 1:20 and 1:30) are mixed and fill up the 3020 SMD blue-InGaN LED, and named as LED-10, LED-20 and LED-30. After that, UV curable gel is deposited on the top of QD layer to form WLED and named as LED-10*, LED-20* and LED-30*. The results show that the Commission International d'Eclairage (CIE) chromaticity coordinates, color rendering index (CRI), luminous efficacy of LED-10*, LED-20* and LED-30* are (0.27, 0.21), 53, 1.9 lm/W, (0.29, 0.30), 72, 3.3 lm/W and (0.25, 0.34), 45, 6.8 lm/W, respectively. We can find

  13. Luminance enhancement in quantum dot light-emitting diodes fabricated with Field’s metal as the cathode

    Science.gov (United States)

    Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.

    2017-03-01

    This work reports the fabrication and characterization of blue-green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1-x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.

  14. Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Le, Quyet Van [School; Kim, Jong Beom [Department; Kim, Soo Young [School; Lee, Byeongdu [X-ray; Lee, Dong Ryeol [Department

    2017-08-15

    We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using the small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting stronger quantum confinement. The cubic-phase perovskite NCs were formed despite the reaction temperatures increased from 140 to 180 °C. However, monodispersive NC cubes which are required for densely packing self-assembly film were only formed at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus, the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

  15. Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Li, Bang; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 (China)

    2016-02-15

    The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski-Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube-root dependence on the excitation power is observed, suggesting a type-II band alignment. The peak position of dots initially red-shifts and then blue-shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Formulating CdSe quantum dots for white light-emitting diodes with high color rendering index

    International Nuclear Information System (INIS)

    Li, Fei; Li, Wan-Nan; Fu, Shao-Yun; Xiao, Hong-Mei

    2015-01-01

    Generation of white light using CdSe quantum dots (QDs) alone presents exciting possibilities for solid state lighting technology. In this work, Cd(Ac) 2 ·2H 2 O and Na 2 SeSO 3 are used as precursors to synthesize CdSe-QDs with an average diameter ranging from 2.77 to 4.65 nm at the low temperature from 60 to 180 °C. Smaller CdSe-QDs with an average diameter of 2.29 nm are got by an oxidation etching process using H 2 O 2 as oxidant. The structural and optical properties of these QDs are investigated and proper formulation of CdSe QDs with various sizes is carefully designed to achieve white light with a high color rendering index (CRI). It is observed for the first time that the as-prepared white light-emitting diodes from single CdSe-QDs show the Commission Inernationale del’Eclairage coordinate (CIE) of (0.30,0.34) very close to that (0.33,0.33) of pure white light and a high CRI of 84. Owing to these advantages, the as-prepared white light-emitting diodes from a single compound are promising for lighting applications. - Highlights: • CdSe-quantum dots (QDs) with a continuously changing size from 2.31 to 4.74 nm are prepared. • The obtained CdSe-QDs emit lights with tunable colors in the whole visible range. • The obtained mixture sample generates white light with a high color rendering index of 84. • The sample yields white light with the CIE coordinate (0.30, 0.34) very close to that of pure white light

  17. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

    DEFF Research Database (Denmark)

    Fiore, A.; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time...

  18. Ultrafast interfacial energy transfer and interlayer excitons in the monolayer WS2/CsPbBr3 quantum dot heterostructure.

    Science.gov (United States)

    Li, Han; Zheng, Xin; Liu, Yu; Zhang, Zhepeng; Jiang, Tian

    2018-01-25

    The idea of fabricating artificial solids with band structures tailored to particular applications has long fascinated condensed matter physicists. Heterostructure (HS) construction is viewed as an effective and appealing approach to engineer novel electronic properties in two dimensional (2D) materials. Different from common 2D/2D heterojunctions where energy transfer is rarely observed, CsPbBr 3 quantum dots (0D-QDs) interfaced with 2D materials have become attractive HSs for exploring the physics of charge transfer and energy transfer, due to their superior optical properties. In this paper, a new 0D/2D HS is proposed and experimentally studied, making it possible to investigate both light utilization and energy transfer. Specifically, this HS is constructed between monolayer WS 2 and CsPbBr 3 QDs, and exhibits a hybrid band alignment. The dynamics of energy transfer within the investigated 0D/2D HS is characterized by femtosecond transient absorption spectrum (TAS) measurements. The TAS results reveal that ultrafast energy transfer caused by optical excitation is observed from CsPbBr 3 QDs to the WS 2 layer, which can increase the exciton fluence within the WS 2 layer up to 69% when compared with pristine ML WS 2 under the same excitation fluence. Moreover, the formation and dynamics of interlayer excitons have also been investigated and confirmed in the HS, with a calculated recombination time of 36.6 ps. Finally, the overall phenomenological dynamical scenario for the 0D/2D HS is established within the 100 ps time region after excitation. The techniques introduced in this work can also be applied to versatile optoelectronic devices based on low dimensional materials.

  19. All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

    Directory of Open Access Journals (Sweden)

    Jiahui Li

    2016-10-01

    Full Text Available All-inorganic quantum dot light emitting diodes (QLEDs have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

  20. A Comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells

    International Nuclear Information System (INIS)

    Park, Il-Kyu; Kwon, Min-Ki; Park, Seong-Ju

    2012-01-01

    A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent photoluminescence (PL) results showed that the internal quantum efficiency of InGaN QDs at room temperature was 8.7 times larger than that found for InGaN QWs because they provided dislocation-free recombination sites for the electrical charge carriers. The excitation power-dependent PL and electroluminescence results showed that the effect of the polarization induced electric field on the recombination process of electrical charge carriers in the QDs was negligibly small whereas it was dominant in the QWs. These results indicate that InGaN QDs are more beneficial than QWs in improving the luminescence efficiency of LEDs in the green spectral range.

  1. From quantum dots to quantum circuits

    International Nuclear Information System (INIS)

    Ensslin, K.

    2008-01-01

    Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse

  2. Optical Spectroscopy Of Charged Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2007-04-01

    Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

  3. Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth

    International Nuclear Information System (INIS)

    Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

    2012-01-01

    Blue (<480 nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs. (paper)

  4. An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

    Science.gov (United States)

    Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

    2017-03-01

    ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

  5. Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes.

    Science.gov (United States)

    Xuan, Tongtong; Yang, Xianfeng; Lou, Sunqi; Huang, Junjian; Liu, Yong; Yu, Jinbo; Li, Huili; Wong, Ka-Leung; Wang, Chengxin; Wang, Jing

    2017-10-19

    Inorganic halide perovskite quantum dots (QDs) suffer from problems related to poor water stability and poor thermal stability. Here we developed a simple strategy to synthesize alkyl phosphate (TDPA) coated CsPbBr 3 QDs by using 1-tetradecylphosphonic acid both as the ligand for the CsPbBr 3 QDs and as the precursor for the formation of alkyl phosphate. These QDs not only retain a high photoluminescence quantum yield (PLQY, 68%) and narrow band emission (FHWM ∼ 22 nm) but also exhibit high stability against water and heat. The relative PL intensity of the QDs was maintained at 75% or 59% after being dispersed in water for 5 h or heated to 375 K (100 °C), respectively. Finally, white light-emitting diodes (WLEDs) with a high luminous efficiency of 63 lm W -1 and a wide color gamut (122% of NTSC) were fabricated by using green-emitting CsPbBr 3 /TDPA QDs and red-emitting K 2 SiF 6 :Mn 4+ phosphors as color converters. The luminous efficiency of the WLEDs remained at 90% after working under a relative humidity (RH) of 60% for 15 h, thereby showing promise for use as backlight devices in LCDs.

  6. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2015-06-01

    Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

  7. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

    Science.gov (United States)

    Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

    2017-08-01

    A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

  8. White emitting CdS quantum dot nanoluminophores hybridized on near-ultraviolet LEDs for high-quality white light generation and tuning

    International Nuclear Information System (INIS)

    Nizamoglu, Sedat; Mutlugun, Evren; Akyuz, Ozgun; Perkgoz, Nihan Kosku; Demir, Hilmi Volkan; Liebscher, Lydia; Sapra, Sameer; Gaponik, Nikolai; Eychmueller, Alexander

    2008-01-01

    To generate white light using semiconductor nanocrystal (NC) quantum dots integrated on light emitting diodes (LEDs), multiple hybrid device parameters (emission wavelengths of the NCs and the excitation platform, order of the NCs with different sizes, amount of the different types of NCs, etc) need to be carefully designed and properly implemented. In this study, we introduce and demonstrate white LEDs based on simple device hybridization using only a single type of white emitting CdS quantum dot nanoluminophores on near-ultraviolet LEDs. Here we present their design, synthesis-growth, fabrication and characterization. With these hybrid devices, we achieve high color rendering index (>70), despite using only a single NC type. Furthermore, we conveniently tune their photometric properties including the chromaticity coordinates, correlated color temperature, and color rendering index with the number of hybridized nanoluminophores in a controlled manner

  9. Characterization and modeling of broad spectrum InAs-GaAs quantum-dot superluminescent diodes emitting at 1.2-1.3 μm

    NARCIS (Netherlands)

    Rossetti, M.; Li, L.; Markus, A.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Krestnikov, I.; Kovsh, A.

    2007-01-01

    High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of ?30-50 mW are achieved using 18 QD layers with p-doped GaAs spacers. At these high powers the device operates in a regime of broad

  10. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

    OpenAIRE

    Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

    2017-01-01

    Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepare...

  11. Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří

    2013-01-01

    Roč. 543, Sept (2013), 83-87 ISSN 0040-6090 R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * electroluminescence * metalorganic vapor phase epitaxy * InAs * GaAsSb * light emitting diodes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.867, year: 2013

  12. Effects of the thickness of NiO hole transport layer on the performance of all-inorganic quantum dot light emitting diode

    International Nuclear Information System (INIS)

    Zhang, Xiao Li; Dai, Hai Tao; Zhao, Jun Liang; Li, Chen; Wang, Shu Guo; Sun, Xiao Wei

    2014-01-01

    All-inorganic quantum dot light emitting diodes (QLEDs) have recently gained great attention owing to their high stability under oxygenic, humid environment and higher operating currents. In this work, we fabricated all-inorganic CdSe/ZnS core-shell QLEDs composed of ITO/NiO/QDs/ZnO/Al, in which NiO and ZnO thin film deposited via all-solution method were employed as hole and electron transport layer, respectively. To achieve high light emitting efficiency, the balance transport between electrons and holes play a key role. In this work, the effects of the thickness of NiO film on the performance of QLEDs were explored experimentally in details. NiO layers with various thicknesses were prepared with different rotation speeds. Experimental results showed that thinner NiO layer deposited at higher rotation speed had higher transmittance and larger band gap. Four typical NiO thickness based QLEDs were fabricated to optimize the hole transport layer. Thinner NiO layer based device performs bright emission with high current injection, which is ascribed to the reduced barrier height between hole transport layer and quantum dot. - Highlights: • All-inorganic quantum dot light emitting diodes (QLEDs) were fabricated. • Thinner NiO film can effectively enhance on–off properties of devices. • Improved performance of QLEDs is mainly attributed to energy barrier reduction

  13. Quantum Dot Photonics

    Science.gov (United States)

    Kinnischtzke, Laura A.

    We report on several experiments using single excitons confined to single semiconductor quantum dots (QDs). Electric and magnetic fields have previously been used as experimental knobs to understand and control individual excitons in single quantum dots. We realize new ways of electric field control by changing materials and device geometry in the first two experiments with strain-based InAs QDs. A standard Schottky diode heterostructure is demonstrated with graphene as the Schottky gate material, and its performance is bench-marked against a diode with a standard gate material, semi-transparent nickel-chromium (NiCr). This change of materials increases the photon collection rate by eliminating absorption in the metallic NiCr layer. A second set of experiments investigates the electric field response of QDs as a possible metrology source. A linear voltage potential drop in a plane near the QDs is used to describe how the spatially varying voltage profile is also imparted on the QDs. We demonstrate a procedure to map this voltage profile as a preliminary route towards a full quantum sensor array. Lastly, InAs QDs are explored as potential spin-photon interfaces. We describe how a magnetic field is used to realize a reversible exchange of information between light and matter, including a discussion of the polarization-dependence of the photoluminesence, and how that can be linked to the spin of a resident electron or hole. We present evidence of this in two wavelength regimes for InAs quantum dots, and discuss how an external magnetic field informs the spin physics of these 2-level systems. This thesis concludes with the discovery of a new class of quantum dots. As-yet unidentified defect states in single layer tungsten diselenide (WSe 2 ) are shown to host quantum light emission. We explore the spatial extent of electron confinement and tentatively identify a radiative lifetime of 1 ns for these single photon emitters.

  14. Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Demir, Nuriye; Oner, Ilker; Varlikli, Canan, E-mail: canan.varlikli@ege.edu.tr; Ozsoy, Cihan; Zafer, Ceylan

    2015-08-31

    Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m{sup 2}, maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%.

  15. Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

    International Nuclear Information System (INIS)

    Demir, Nuriye; Oner, Ilker; Varlikli, Canan; Ozsoy, Cihan; Zafer, Ceylan

    2015-01-01

    Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m 2 , maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%

  16. Hydrothermal synthesis of highly luminescent blue-emitting ZnSe(S) quantum dots exhibiting low toxicity

    Energy Technology Data Exchange (ETDEWEB)

    Mirnajafizadeh, Fatemeh; Ramsey, Deborah; McAlpine, Shelli [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Wang, Fan; Reece, Peter [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Stride, John Arron, E-mail: j.stride@unsw.edu.au [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Bragg Institute, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia)

    2016-07-01

    Highly luminescent quantum dots (QDs) that emit in the visible spectrum are of interest to a number of imaging technologies, not least that of biological samples. One issue that hinders the application of luminescent markers in biology is the potential toxicity of the fluorophore. Here we show that hydrothermally synthesized ZnSe(S) QDs have low cytotoxicity to both human colorectal carcinoma cells (HCT-116) and human skin fibroblast cells (WS1). The QDs exhibited a high degree of crystallinity, with a strong blue photoluminescence at up to 29% quantum yield relative to 4′,6-diamidino-2-phenylindole (DAPI) without post-synthetic UV-irradiation. Confocal microscopy images obtained of HCT-116 cells after incubation with the QDs highlighted the stability of the particles in cell media. Cytotoxicity studies showed that both HCT-116 and WS1 cells retain 100% viability after treatment with the QDs at concentrations up to 0.5 g/L, which makes them of potential use in biological imaging applications. - Highlights: • Highly luminescent ZnSe(S) QDs were synthesized using a simple, one-step hydrothermal method. • The as-synthesized QDs were found to be nontoxic in the presence of biological cells. • The QDs were stable in biological media with identical emission profile to that in water.

  17. Amine-Free Synthesis of Cesium Lead Halide Perovskite Quantum Dots for Efficient Light-Emitting Diodes

    KAUST Repository

    Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Kim, Younghoon; Walters, Grant; Castañ eda, Juan Andres; Kanjanaboos, Pongsakorn; Yuan, Mingjian; Gong, Xiwen; Fan, Fengjia; Pan, Jun; Hoogland, Sjoerd; Comin, Riccardo; Bakr, Osman; Padilha, Lazaro A.; Nogueira, Ana F.; Sargent, Edward H.

    2016-01-01

    Cesium lead halide perovskite quantum dots (PQDs) have attracted significant interest for optoelectronic applications in view of their high brightness and narrow emission linewidth at visible wavelengths. A remaining challenge is the degradation of PQDs during purification from the synthesis solution. This is attributed to proton transfer between oleic acid and oleylamine surface capping agents that leads to facile ligand loss. Here, a new synthetic method is reported that enhances the colloidal stability of PQDs by capping them solely using oleic acid (OA). Quaternary alkylammonium halides are used as precursors, eliminating the need for oleylamine. This strategy enhances the colloidal stability of OA capped PQDs during purification, allowing us to remove excess organic content in thin films. Inverted red, green, and blue PQD light-emitting diodes (LED) are fabricated for the first time with solution-processed polymer-based hole transport layers due to higher robustness of OA capped PQDs to solution processing. The blue and green LEDs exhibit threefold and tenfold improved external quantum efficiency (EQE), respectively, compared to prior related reports for amine/ammonium capped cross-linked PQDs. The brightest blue LED based on all inorganic CsPb(Br1- xClx)3 PQDs is also reported. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Highly luminescent and photostable quantum dot-silica monolith and its application to light-emitting diodes.

    Science.gov (United States)

    Jun, Shinae; Lee, Junho; Jang, Eunjoo

    2013-02-26

    A highly luminescent and photostable quantum dot-silica monolith (QD-SM) substance was prepared by preliminary surface exchange of the QDs and base-catalyzed sol-gel condensation of silica. The SM was heavily doped with 6-mercaptohexanol exchanged QDs up to 12 vol % (26 wt %) without particle aggregation. Propylamine catalyst was important in maintaining the original luminescence of the QDs in the SM during sol-gel condensation. The silica layer was a good barrier against oxygen and moisture, so that the QD-SM maintained its initial luminescence after high-power UV radiation (∼1 W) for 200 h and through the 150 °C LED encapsulant curing process. Green and red light-emitting QD-SMs were applied as color-converting layers on blue LEDs, and the external quantum efficiency reached up to 89% for the green QD-SM and 63% for the red one. A white LED made with a mixture of green and red QDs in the SM, in which the color coordinate was adjusted at (0.23, 0.21) in CIE1931 color space for a backlight application, showed an efficacy of 47 lm/W, the highest value yet reported.

  19. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    Science.gov (United States)

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

  20. Amine-Free Synthesis of Cesium Lead Halide Perovskite Quantum Dots for Efficient Light-Emitting Diodes

    KAUST Repository

    Yassitepe, Emre

    2016-10-31

    Cesium lead halide perovskite quantum dots (PQDs) have attracted significant interest for optoelectronic applications in view of their high brightness and narrow emission linewidth at visible wavelengths. A remaining challenge is the degradation of PQDs during purification from the synthesis solution. This is attributed to proton transfer between oleic acid and oleylamine surface capping agents that leads to facile ligand loss. Here, a new synthetic method is reported that enhances the colloidal stability of PQDs by capping them solely using oleic acid (OA). Quaternary alkylammonium halides are used as precursors, eliminating the need for oleylamine. This strategy enhances the colloidal stability of OA capped PQDs during purification, allowing us to remove excess organic content in thin films. Inverted red, green, and blue PQD light-emitting diodes (LED) are fabricated for the first time with solution-processed polymer-based hole transport layers due to higher robustness of OA capped PQDs to solution processing. The blue and green LEDs exhibit threefold and tenfold improved external quantum efficiency (EQE), respectively, compared to prior related reports for amine/ammonium capped cross-linked PQDs. The brightest blue LED based on all inorganic CsPb(Br1- xClx)3 PQDs is also reported. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Efficient, air-stable quantum dots light-emitting devices with MoO3 modifying the anode

    International Nuclear Information System (INIS)

    Meng, Xiangdong; Ji, Wenyu; Hua, Jie; Yu, Zhaoliang; Zhang, Yan; Li, Haibo; Zhao, Jialong

    2013-01-01

    In this work, we fabricated quantum dots light-emitting devices with hole-injection layer, molybdenum oxide (MoO 3 ) substituting for poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) which is hygroscopic and acidic and, therefore, a source of interface instability. A significant enhancement in luminance and current efficiency in MoO 3 -containing devices was observed. In addition, MoO 3 -containing devices were more stable in the air than those with PEDOT:PSS as the hole injection layer. The hole injection and transport of the devices were studied by the J–V characteristics of the hole-only devices. The excellent performance of the devices was principally a result of MoO 3 possessing lower injection barrier for the hole and better stability than PEDOT:PSS. -- Highlights: • We fabricated QD-LEDs with MoO 3 substituting for PEDOT:PSS as hole-injection layer. • A enhancement in luminance and efficiency in MoO 3 -containing device was observed. • The enhancement was originated from the stability and easy hole injection of MoO 3

  2. Structural optimization for remote white light-emitting diodes with quantum dots and phosphor: packaging sequence matters.

    Science.gov (United States)

    Xie, Bin; Chen, Wei; Hao, Junjie; Wu, Dan; Yu, Xingjian; Chen, Yanhua; Hu, Run; Wang, Kai; Luo, Xiaobing

    2016-12-26

    White light-emitting diodes (WLEDs) with quantum dots (QDs) and phosphor have attracted tremendous attentions due to their excellent color rendering ability. In the packaging process, QDs layer and phosphor-silicone layer tend to be separated to reduce the reabsorption losses, and to maintain the stability of QDs surface ligands. This study investigated the packaging sequence between QDs and phosphor on the optical and thermal performances of WLEDs. The output optical power and PL spectra were measured and analyzed, and the temperature fields were simulated and validated experimentally by infrared thermal imager. It was found that when driven by 60 mA, the QDs-on-phosphor type WLEDs achieved luminous efficiency (LE) of 110 lm/W, with color rendering index (CRI) of Ra = 92 and R9 = 80, while the phosphor-on-QDs type WLEDs demonstrated lower LE of 68 lm/W, with Ra = 57 and R9 = 24. Moreover, the QDs-on-phosphor type WLEDs generated less heat than that of another, consequently the highest temperature in the QDs-on-phosphor type was lower than another, and the temperature difference can reach 12.3°C. Therefore, in terms of packaging sequence, the QDs-on-phosphor type is an optimal packaging architecture for higher optical efficiency, better color rendering ability and lower device temperature.

  3. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  4. Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

    Science.gov (United States)

    Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

    2012-07-01

    White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

  5. A Phosphine-Free Route to Size-Adjustable CdSe and CdSe/CdS Core-Shell Quantum Dots for White-Light-Emitting Diodes.

    Science.gov (United States)

    Zhang, Yugang; Li, Guopeng; Zhang, Ting; Song, Zihang; Wang, Hui; Zhang, Zhongping; Jiang, Yang

    2018-03-01

    The selenium dioxide was used as the precursor to synthesize wide-size-ranged CdSe quantum dots (2.4-5.7 nm) via hot-injection route. The CdSe quantum dots are featured with high crystalline, monodisperse, zinc blende structure and wide emission region (530-635 nm). In order to improve the stability and quantum yield, a phosphine-free single-molecular precursor approach is used to obtain CdSe/CdS core/shell quantum dots. The CdSe/CdS quantum dots are highly fluorescent with quantum yield up to 65%, and persist the good monodispersity and high crystallinity. Moreover, the quantum dots white light-emitting-diodes are fabricated by using the resultant red emission core/shell quantum dots and Y3Al5O12:Ce3+ yellow phosphors as color-conversion layers on a blue InGaN chip. The prepared light-emitting-diodes show good performance with CIE-1931 coordinated of (0.3583, 0.3349), an Ra of 92.9, and a Tc of 4410 K at 20 mA, which indicate that the combination of red-emission QDs and yellow phophors as a promising approach to obtain warm WLEDs with good color rendering.

  6. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

    Energy Technology Data Exchange (ETDEWEB)

    Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; Austing, D. G.; Lu, Tzu-Ming; Luhman, Dwight; Bethke, Donald Thomas; Wanke, Michael; Lilly, Michael; Carroll, Malcolm S.; Sachrajda, A. S.

    2017-12-01

    We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.

  7. Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

    Science.gov (United States)

    Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

    2017-11-01

    Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

  8. InAs/GaAs quantum dot structures emitting in the 1.55 μm band

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Komarnitskyy, V.; Kuldová, Karla; Hospodková, Alice; Vyskočil, Jan; Hulicius, Eduard; Pangrác, Jiří

    2009-01-01

    Roč. 6, č. 1 (2009), 012007/1-012007/4 ISSN 1757-8981 R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * InAs * GaAs * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism

  9. Sensitizing effects of ZnO quantum dots on red-emitting Pr3+-doped SiO2 phosphor

    CSIR Research Space (South Africa)

    Mbule, PS

    2012-05-01

    Full Text Available In this study, red cathodoluminescence (CL) ( emission=614 nm) was observed from Pr3+ ions in a glassy (amorphous) SiO2 host. This emission was enhanced considerably when ZnO quantum dots (QDs) were incorporated in the SiO2:Pr3+ suggesting...

  10. Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

    2007-01-01

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

  11. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  12. Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states.

    Science.gov (United States)

    Lin, Lyu-Chih; Chen, Chih-Ying; Huang, Heming; Arsenijević, Dejan; Bimberg, Dieter; Grillot, Frédéric; Lin, Fan-Yi

    2018-01-15

    We experimentally compare the dynamics of InAs/GaAs quantum dot lasers under optical feedback emitting exclusively on ground states (GSs) or excited states (ESs). By varying the feedback parameters and putting focus either on their short or long cavity regions, various periodic and chaotic oscillatory states are found. The GS laser is shown to be more resistant to feedback, benefiting from its strong relaxation oscillation damping. In contrast, the ES laser can easily be driven into complex dynamics. While the GS laser is of importance for the development of isolator-free transmitters, the ES laser is essential for applications taking advantages of chaos.

  13. Controlling reabsorption effect of bi-color CdSe quantum dots-based white light-emitting diodes

    Science.gov (United States)

    Siao, Cyuan-Bin; Chung, Shu-Ru; Wang, Kuan-Wen

    2017-08-01

    The colloidal semiconductor quantum dots (QDs) have the potentials to be used in white light-emitting diode (WLED) as a down-converting component to replace incandescent lamps, because the traditional WLED composed of Y3Al5O12:Ce3+ (YAG:Ce) phosphor lack of red color emissions and shows low color quality. Among various QDs, CdSe has been extensively studied because it possesses attractive characteristics such as high quantum yields (QYs), narrow emission spectral bandwidth, as well as size-tunable optical characteristics. However, in order to enhance the color rendering index (CRI) of WLED, blending materials with different emission wavelengths has been used frequently. Unfortunately, these procedures are complex and time-consuming, and the emission energy of smaller QDs can be reabsorbed by larger QDs, resulting in decreasing the excitation intensity in yellowish-green region. Therefore, in this study, in order to decrease the reabsorption effect and to simplify the procedures, we have demonstrated a facile thermal pyrolyzed route to prepare bicolor CdSe QDs with dual-wavelengths. The emission wavelengths, particle sizes, and QYs of QDs can be tuned from 537/595 to 537/602 nm, 2.59/3.92 to 2.59/4.01 nm, and 27 to 40 %, for GR1 to 3 samples, respectively when the amount of Se precursor is decreased from 1.5 to 0.75 mmol. Meanwhile, the area ratio of green to red (Ag/Ar) in fluorescence spectra is gradually increased, due to the increase in growth rate, and decrease in nuclei formation in red emission. The GR1, GR2, and GR3 QDs are then encapsulated by convert types to form the LED, in which the QDs are deposited on the blue-emitting InGaN LED chip (λem = 450 nm). After encapsulation, the devices properties of Commission International d'Eclairage (CIE) chromaticity and Ag/Ar area ratio are (0.40, 0.24), 0.28/1, (0.40, 0.31), 0.52/1, and (0.40, 0.38), 1.02/1, respectively for GR1, GR2, and GR3. The results show that the green emission intensity are strongly

  14. Quantum dot sensitized solar cell based on TiO2/CdS/Ag2S heterostructure

    Science.gov (United States)

    Pawar, Sachin A.; Patil, Dipali S.; Kim, Jin Hyeok; Patil, Pramod S.; Shin, Jae Cheol

    2017-04-01

    Quantum dot sensitized solar cell (QDSSC) is fabricated based on a stepwise band structure of TiO2/CdS/Ag2S to improve the photoconversion efficiency of TiO2/CdS system by incorporating a low band gap Ag2S QDs. Vertically aligned TiO2 nanorods assembly is prepared by a simple hydrothermal technique. The formation of CdS and Ag2S QDs over TiO2 nanorods assembly as a photoanode is carried out by successive ionic layer adsorption and reaction (SILAR) technique. The synthesized electrode materials are characterized by XRD, XPS, field emission scanning electron microscopy (FE-SEM), Optical, solar cell and electrochemical performances. The results designate that the QDs of CdS and Ag2S have efficiently covered exterior surfaces of TiO2 nanorods assembly. A cautious evaluation between TiO2/CdS and TiO2/CdS/Ag2S sensitized cells tells that CdS and Ag2S synergetically helps to enhance the light harvesting ability. Under AM 1.5G illumination, the photoanodes show an improved power conversion efficiency of 1.87%, in an aqueous polysulfide electrolyte with short-circuit photocurrent density of 7.03 mA cm-2 which is four fold higher than that of a TiO2/CdS system.

  15. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  16. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  17. White light-emitting nanocomposites based on an oxadiazole–carbazole copolymer (POC) and InP/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, Annalisa, E-mail: annalisa.bruno@enea.it; Borriello, Carmela, E-mail: carmela.borriello@enea.it; Di Luccio, Tiziana, E-mail: tiziana.diluccio@enea.it; Nenna, Giuseppe [Centro Ricerche Portici, ENEA, UTTP NANO (Italy); Sessa, Lucia [University of Salerno, Department of Pharmacy (Italy); Concilio, Simona [University of Salerno, Department of Industrial Engineering (Italy); Haque, Saif A. [Imperial College London, Chemistry Department (United Kingdom); Minarini, Carla [Centro Ricerche Portici, ENEA, UTTP NANO (Italy)

    2013-11-15

    In this work, we studied energetic and optical proprieties of a polyester-containing oxadiazole and carbazole units that we will indicate as POC. This polymer is characterized by high photoluminescence activity in the blue region of the visible spectrum, making it suitable for the development of efficient white-emitting organic light emission devices. Moreover, POC polymer has been combined with two red emitters InP/ZnS quantum dots (QDs) to obtain nanocomposites with wide emission spectra. The two types of QDs have different absorption wavelengths: 570 nm [InP/ZnS(570)] and 627 nm [InP/ZnS(627)] and were inserted in the polymer at different concentrations. The optical properties of the nanocomposites have been investigated and compared to the ones of the pure polymer. Both spectral and time resolved fluorescence measurements show an efficient energy transfer from the polymer to QDs, resulting in white-emitting nanocomposites.

  18. White light-emitting nanocomposites based on an oxadiazole-carbazole copolymer (POC) and InP/ZnS quantum dots

    Science.gov (United States)

    Bruno, Annalisa; Borriello, Carmela; Di Luccio, Tiziana; Nenna, Giuseppe; Sessa, Lucia; Concilio, Simona; Haque, Saif A.; Minarini, Carla

    2013-11-01

    In this work, we studied energetic and optical proprieties of a polyester-containing oxadiazole and carbazole units that we will indicate as POC. This polymer is characterized by high photoluminescence activity in the blue region of the visible spectrum, making it suitable for the development of efficient white-emitting organic light emission devices. Moreover, POC polymer has been combined with two red emitters InP/ZnS quantum dots (QDs) to obtain nanocomposites with wide emission spectra. The two types of QDs have different absorption wavelengths: 570 nm [InP/ZnS(570)] and 627 nm [InP/ZnS(627)] and were inserted in the polymer at different concentrations. The optical properties of the nanocomposites have been investigated and compared to the ones of the pure polymer. Both spectral and time resolved fluorescence measurements show an efficient energy transfer from the polymer to QDs, resulting in white-emitting nanocomposites.

  19. Strongly capacitively coupled double quantum dots in GaAs-AlGaAs heterostructures. Preparation and electrical transport; Kapazitativ stark gekoppelte Doppelquantenpunkte in GaAs-AlGaAs-Heterostrukturen. Herstellung und elektrischer Transport

    Energy Technology Data Exchange (ETDEWEB)

    Huebel, A.

    2007-11-22

    In this work, a double quantum dot system is studied whose two dots are electrically insulated from one another and contacted independently with two leads. The geometry is optimized to maximize the capacitive interaction between the dots. The samples are characterized by electrical transport measurements in a dilution refrigerator. It is then studied at different tunnel couplings how the capacitive interaction influences the electrical transport in equilibrium. Under certain conditions correlated tunnel processes can be observed. A simple model is derived that serves to understand these processes. The double quantum dot system is defined in lateral arrangement by reactive ion etching of a two-dimensional electron system located only 50 nm below the surface of a GaAs-AlGaAs heterostructure. The samples are characterized in a dilution refrigerator at 25 mK near the common pinch-off point of all four tunnel barriers. A measurement of the differential equilibrium conductances of both quantum dots as a function of two gate voltages yields a honeycomb-like charge stability diagram. The most important sample characteristic is the ratio between the interaction capacitance and the total capacitance of a single quantum dot. For the optimized sample, this ratio turns out to be larger than one third near the common pinch-off point, with a single-dot charging energy of up to 800 {mu}eV. At more positive gate voltages, the capacitances between the quantum dots and their leads increase more and more, thereby diminishing the charging energy. It is shown for the optimized sample that all capacitance coefficients except the dot-lead capacitances are constant to within considerable accuracy over several Coulomb blockade oscillations. In order to measure correlated electrical transport in equilibrium, special parameter regions are examined in which the charges of both quantum dots cannot fluctuate independently of each other. An analytical formula is derived that describes the

  20. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

    Science.gov (United States)

    Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

    2012-11-07

    InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

  1. Improve the surface of silver nanowire transparent electrode using a double-layer structure for the quantum-dot light-emitting diodes

    Science.gov (United States)

    Cho, Seok Hyeon; Been Heo, Su; Kang, Seong Jun

    2018-03-01

    We developed a double-layer structured transparent electrode for use in flexible quantum-dot light-emitting diodes (QLEDs). Silver nanowires (AgNWs) and highly conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) were coated on a transparent substrate to obtain a highly conductive and flexible transparent electrode. The highly conductive PEDOT:PSS improved the surface roughness of the AgNWs transparent electrode film as well as the surface coverage area of the film. The double-layer structured transparent electrode showed superior mechanical properties than conventional indium-tin oxide (ITO) and AgNWs transparent electrodes. QLEDs with the double-layer structured transparent electrode also showed good reliability under cyclic bending conditions. These results indicate that the double-layer structured AgNWs/PEDOT:PSS transparent electrode described here is a feasible alternative to ITO transparent electrodes for flexible QLEDs.

  2. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  3. PREFACE: Quantum Dot 2010

    Science.gov (United States)

    Taylor, Robert A.

    2010-09-01

    These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

  4. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

    Directory of Open Access Journals (Sweden)

    Wenyan Liu

    2015-01-01

    Full Text Available The quantum dot-based light-emitting diodes (QD-LEDs were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM, and power efficiency (PE. The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.

  5. Quantum Dots: Theory

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  6. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    1999-01-01

    Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...

  7. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...

  8. Synthesis of quantum dots

    Science.gov (United States)

    McDaniel, Hunter

    2017-10-17

    Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

  9. Accelerating FRET between Near-Infrared Emitting Quantum Dots Using a Molecular J-Aggregate as an Exciton Bridge.

    Science.gov (United States)

    Wang, Chen; Weiss, Emily A

    2017-09-13

    Fast energy transfer (EnT) among quantum dots (QDs) with near-infrared (NIR) emission is essential for fully exploiting their light harvesting and photon downconversion (multiexciton generation) abilities. This paper demonstrates a relayed EnT mechanism that accelerates the migration of NIR excitons between PbS QDs by a factor of 20 from that of one-step EnT through a polyelectrolyte and even a factor of ∼2 from that of one-step EnT between QDs in direct contact, by employing a J-aggregate (J-agg) of a cyanine dye as an exciton bridge. The donor QDs, acceptor QDs, and J-agg are electrostatically assembled into a sandwich structure with layer-by-layer deposition. Estimates of EnT rate and yield from transient and steady-state absorption and photoluminescence spectroscopies show that the rate-limiting step in the relay is EnT from the donor QD to the J-agg, while EnT from the J-agg to the acceptor QD occurs in J-agg with more intermolecular order. This work demonstrates the viability of relayed EnT through a molecular bridge as a strategy for accelerating long-distance exciton migration in assemblies of QDs, in particular in the near-infrared.

  10. Core–shell quantum dots: Properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

    2015-07-05

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

  11. Core–shell quantum dots: Properties and applications

    International Nuclear Information System (INIS)

    Vasudevan, D.; Gaddam, Rohit Ranganathan; Trinchi, Adrian; Cole, Ivan

    2015-01-01

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis

  12. Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

    Science.gov (United States)

    Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

    2017-11-13

    Tri(pyrazolyl)phosphanes (5 R1,R2 ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA) 3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA) 3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Electroluminescent Cu-doped CdS quantum dots

    NARCIS (Netherlands)

    Stouwdam, J.W.; Janssen, R.A.J.

    2009-01-01

    Incorporating Cu-doped CdS quantum dots into a polymer host produces efficient light-emitting diodes. The Cu dopant creates a trap level that aligns with the valence band of the host, enabling the direct injection of holes into the quantum dots, which act as emitters. At low current densities, the

  14. Imaging vasculature and lymphatic flow in mice using quantum dots

    DEFF Research Database (Denmark)

    Ballou, Byron; Ernst, Lauren A.; Andreko, Susan

    2009-01-01

    Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...

  15. Tunable ultrasmall visible-to-extended near-infrared emitting silver sulfide quantum dots for integrin-targeted cancer imaging.

    Science.gov (United States)

    Tang, Rui; Xue, Jianpeng; Xu, Baogang; Shen, Duanwen; Sudlow, Gail P; Achilefu, Samuel

    2015-01-27

    The large size of many near-infrared (NIR) fluorescent nanoparticles prevents rapid extravasation from blood vessels and subsequent diffusion to tumors. This confines in vivo uptake to the peritumoral space and results in high liver retention. In this study, we developed a viscosity modulated approach to synthesize ultrasmall silver sulfide quantum dots (QDs) with distinct tunable light emission from 500 to 1200 nm and a QD core diameter between 1.5 and 9 nm. Conjugation of a tumor-avid cyclic pentapeptide (Arg-Gly-Asp-DPhe-Lys) resulted in monodisperse, water-soluble QDs (hydrodynamic diameter < 10 nm) without loss of the peptide's high binding affinity to tumor-associated integrins (KI = 1.8 nM/peptide). Fluorescence and electron microscopy showed that selective integrin-mediated internalization was observed only in cancer cells treated with the peptide-labeled QDs, demonstrating that the unlabeled hydrophilic nanoparticles exhibit characteristics of negatively charged fluorescent dye molecules, which typically do not internalize in cells. The biodistribution profiles of intravenously administered QDs in different mouse models of cancer reveal an exceptionally high tumor-to-liver uptake ratio, suggesting that the small sized QDs evaded conventional opsonization and subsequent high uptake in the liver and spleen. The seamless tunability of the QDs over a wide spectral range with only a small increase in size, as well as the ease of labeling the bright and noncytotoxic QDs with biomolecules, provides a platform for multiplexing information, tracking the trafficking of single molecules in cells, and selectively targeting disease biomarkers in living organisms without premature QD opsonization in circulating blood.

  16. Ultrasmall visible-to-near-infrared emitting silver-sulfide quantum dots for cancer detection and imaging

    Science.gov (United States)

    Tang, Rui; Xu, Baogang; Shen, Duanwen; Sudlow, Gail; Achilefu, Samuel

    2018-02-01

    The large size of many near infrared (NIR) fluorescent nanoparticles prevents rapid extravasation from blood vessels and subsequent diffusion to tumors. This confines in vivo uptake to the peritumoral space and results in high liver retention. We developed a viscosity modulated approach to synthesize ultrasmall silver sulfide quantum dots (QDs) with distinct tunable light emission from visible to near-infrared in spectrum and a QD core diameter between less than 5 nm. Further functionalization of these Ag2S QDs with different type of molecules such as targeting peptides, retains monodisperse, relatively small water soluble QDs without loss of the functionality of the peptide's high binding affinity to cancerous tumor. Fluorescence and electron microscopy showed that selective integrin-mediated internalization was observed only in cancer cells treated with the peptide-labeled QDs, demonstrating that the unlabeled hydrophilic nanoparticles exhibit characteristics of negatively charged fluorescent dye molecules, which typically do not internalize in cells. The biodistribution profiles of intravenously administered QDs in different mouse models of cancer reveal an exceptionally high tumor-to-liver uptake ratio, suggesting that the small sized QDs evaded conventional opsonization and subsequent high uptake in the liver and spleen. The seamless tunability of the QDs over a wide spectral range with only a small increase in size, as well as the ease of labeling the bright and non-cytotoxic QDs with biomolecules, provides a platform for multiplexing information, tracking the trafficking of single molecules in cells, and selectively targeting disease biomarkers in living organisms without premature QD opsonization in circulating blood.

  17. CdSe white quantum dots-based white light-emitting diodes with high color rendering index

    Science.gov (United States)

    Su, Yu-Sheng; Hsiao, Chih-Chun; Chung, Shu-Ru

    2016-09-01

    A white light emission CdSe quantum dots (QDs) can be prepared by chemical route under 180°C. An organic oleic acid (OA) is used to react with CdO to form Cd-OA complex. Hexadecylamine (HDA) and 1-Octadecene (ODE) were used as co-surfactants. By controlling the reaction time, a white light emission CdSe QDs can be obtained after reacts for 3 to 10 min. The luminescence spectra compose two obvious emission peaks and entire visible light ranges from 400 to 650 nm. Based on TEM measurement result, spherical morphologies with particle size 2.39+/-0.27 nm can be obtained. The quantum yields (QYs) of white CdSe QD are between 20 and 60 %, which depends on reaction time. A white CdSe QDs were mixed with UV cured gel (OPAS-226) with weight ratios 50.0 wt. %, and putted the mixture into reflective cup (3020, 13 mil) as convert type. The white LEDs have controllable CIE coordinates and correlated color temperature (CCT). The luminous efficacy of the device is less than 3 lm/W, but the color rendering index (CRI) for all devices are higher than 80. Since the luminous efficacy of hybrid devices has a direct dependence on the external QY of the UV-LED as well, the luminous efficacy can be improved by well dispersion of CdSe QDs in UV gel matrix and using optimized LED chips. Therefore, in this study, we provide a new and simple method to prepare high QY of white CdSe QDs and its have a potential to applicate in solid-state lighting.

  18. Quantum dot molecules

    CERN Document Server

    Wu, Jiang

    2014-01-01

    This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.

  19. Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

    KAUST Repository

    Cao, Sheng

    2017-04-19

    Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

  20. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes.

    Science.gov (United States)

    Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

    2017-09-19

    Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at ~ 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at ~ 5 V, the highest luminance (160 cd/m 2 ) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

  1. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

    Science.gov (United States)

    Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

    2017-09-01

    Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

  2. Utilization of solvothermally grown InP/ZnS quantum dots as wavelength converters for fabrication of white light-emitting diodes.

    Science.gov (United States)

    Jang, Eun-Pyo; Yang, Heesun

    2013-09-01

    This work reports on a simple solvothermal synthesis of InP/ZnS core/shell quantum dots (QDs) using a much safer and cheaper phosphorus precursor of tris(dimethylamino)phosphine than the most popularly chosen tris(trimethylsilyl)phosphine. The band gap of InP QDs is facilely controlled by varying the solvothermal core growth time (4 vs. 6 h) with a fixed temperature of 150 degrees C, and the successive solvothermal ZnS shelling at 220 degrees C for 6 h results in green- and yellow-emtting InP/ZnS QD with emission quantum yield of 41-42%. The broad size distribution of as-synthesized InP/ZnS QDs, which appears to be inherent in the current solvothermal approach, is improved by a size-selective sorting procedure, and the emission properties of the resulting size-sorted QD fractions are investigated. To produce white emission for general lighting source, a blue light-emitting diode (LED) is combined with non-size-soroted green or yellow QDs as wavelength converters. Furthermore, the QD-LED that includes a blend of green and yellow QDs is fabricated to generate a white lighting source with an enhanced color rendering performance, and its electroluminescent properties are characterized in detail.

  3. Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

    Science.gov (United States)

    Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

    2016-08-01

    A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

  4. Graphene quantum dots

    CERN Document Server

    Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

    2014-01-01

    This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

  5. Advancements in the Field of Quantum Dots

    Science.gov (United States)

    Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

    2012-08-01

    Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

  6. Detection of CdSe quantum dot photoluminescence for security label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

    2016-02-08

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  7. CdZnTe quantum dots study: energy and phase relaxation process

    International Nuclear Information System (INIS)

    Viale, Yannick

    2004-01-01

    We present a study of the electron-hole pair energy and phase relaxation processes in a CdTe/ZnTe heterostructure, in which quantum dots are embedded. CdZnTe quantum wells with a high Zinc concentration, separated by ZnTe barriers, contain islands with a high cadmium concentration. In photoluminescence excitation spectroscopy experiments, we evidence two types of electron hole pair relaxation processes. After being excited in the CdZnTe quantum well, the pairs relax their energy by emitting a cascade of longitudinal optical phonons until they are trapped in the quantum dots. Before their radiative recombination follows an intra-dot relaxation, which is attributed to a lattice polarization mechanism of the quantum dots. It is related to the coupling between the electronic and the vibrational states. Both relaxation mechanisms are reinforced by the strong polar character of the chemical bond in II-VI compounds. Time resolved measurements of transmission variations in a pump-probe configuration allowed us to investigate the population dynamics of the electron-hole pairs during the relaxation process. We observe a relaxation time of about 2 ps for the longitudinal phonon emission cascade in the quantum well before a saturation of the quantum dot transition. We also measured an intra-box relaxation time of 25 ps. The comparison of various cascades allows us to estimate the emission time of a longitudinal optical phonon in the quantum well to be about 100 fs. In four waves mixing experiments, we observe oscillations that we attribute to quantum beats between excitonic and bi-excitonic transitions. The dephasing times that we measure as function of the density of photons shows that excitons are strongly localized in the quantum dots. The excitonic dephasing time is much shorter than the radiative lifetime and is thus controlled by the intra-dot relaxation time. (author) [fr

  8. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

  9. Circular polarization memory in single Quantum Dots

    International Nuclear Information System (INIS)

    Khatsevich, S.; Poem, E.; Benny, Y.; Marderfeld, I.; Gershoni, D.; Badolato, A.; Petroff, P. M.

    2010-01-01

    Under quasi-resonant circularly polarized optical excitation, charged quantum dots may emit polarized light. We measured various transitions with either positive, negative or no circular-polarization memory. We explain these observations and quantitatively calculate the polarization spectrum. Our model use the full configuration-interaction method, including the electron-hole exchange interaction, for calculating the quantum dot's confined many-carrier states, along with one assumption regarding the spin relaxation of photoexcited carriers: Electrons maintain their initial spin polarization, while holes do not.

  10. Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Zíková, Markéta; Pangrác, Jiří; Oswald, Jiří; Kubištová, Jana; Kuldová, Karla; Hazdra, P.; Hulicius, Eduard

    2013-01-01

    Roč. 46, č. 9 (2013), "095103-1"-"095103-9" ISSN 0022-3727 R&D Projects: GA ČR GAP102/10/1201; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.521, year: 2013 http://iopscience.iop.org/0022-3727/46/9/095103/

  11. Transport in quantum dots

    International Nuclear Information System (INIS)

    Deus, Fernanda; Continetino, Mucio

    2011-01-01

    Full text. In this work we study the time dependent transport in interacting quantum dot. This is a zero-dimensional nano structure system which has quantized electronic states. In our purpose, we are interested in studying such system in a Coulomb blockade regime where a mean-field treatment of the electronic correlations are appropriate. The quantum dot is described by an Anderson type of Hamiltonian where the hybridization term arises from the contact with the leads. We consider a time dependence of both the energy of the localized state in the quantum dot and of the hybridization-like term. These time dependent parameters, under certain conditions, induce a current in the quantum dot even in the absence of difference on the chemical potential of the leads. The approach to this non-equilibrium problem requires the use of a Keldysh formalism. We calculate the non- equilibrium Green's functions and obtain results for the average (equilibrium term) and the non-equilibrium values of the electronic occupation number in the dot. we consider the possibility of a magnetic solution, with different values for the average up and down spins in the quantum dot. Our results allow to obtain, for instance, the tunneling current through the dot. The magnetic nature of the dot, for a certain range of parameters should give rise also to an induced spin current through the dot

  12. Solid-state cavity quantum electrodynamics using quantum dots

    International Nuclear Information System (INIS)

    Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

    2001-01-01

    We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

  13. Composition and strain effects in Type I and Type II heterostructure ZnSe/Cd(Zn)S and ZnSe/Cd1-xZnxS core/shell quantum dots

    Science.gov (United States)

    Gheshlaghi, Negar; Pisheh, Hadi Sedaghat; Ünlü, Hilmi

    2017-11-01

    We investigated the effect of ternary shell alloy composition on the bandgap and diameter of core of ZnSe / Cd1 - x Znx S heterostructure core/shell quantum dots, which were synthesized by using a simple colloidal technique. Characterization by using the x-ray diffraction (XRD), transmission electron microscopy (TEM), UV-Vis absorption and fluorescence emission spectroscopic techniques indicate that (i) there is a transition of ZnSe / Cd0.6 Zn0.4 S Type-I heterostructure (electrons and holes tend to localize in core) to ZnSe / Cd0.75 Zn0.25 S quasi-Type-II heterostructures (holes tend to localized in the core and electrons are delocalized) and (ii) then after large red shift and Stock-shift in PL emission spectra but not a distinct absorption peak in UV spectra become noticeable in ZnSe/Cd0.75Zn0.25 S quasi-Type II and ZnSe/CdS Type II heterostructures (electrons are localized in core and holes are localized in shell). Furthermore, the increase of Cd:S ratio in shell alloy composition shifts the XRD peaks to lower 2θ degrees which corresponds to tensile strain in the ZnSe core. Finally, the hydrostatic interfacial strain has effect on the squeezing or stretching the capped core: A decrease of compressive force on core from ZnSe/ZnS to tensile force in ZnSe/CdS with increase in Cd:S ratio indicates that transition of compressive strain to tensile strain takes place with the transition from Type-I to II heterostructure.

  14. Highly pure yellow light emission of perovskite CsPb(BrxI1-x)3 quantum dots and their application for yellow light-emitting diodes

    Science.gov (United States)

    He, Yuandan; Gong, Jinhui; Zhu, Yiyuan; Feng, Xingcan; Peng, Hong; Wang, Wei; He, Haiyang; Liu, Hu; Wang, Li

    2018-06-01

    High-quality all-inorganic perovskite CsPb(BrxI1-x)3 quantum dots (QDs) with quantum yield of 50% were systematically studied as yellow light convertor for light emitting diodes (LEDs). A novel heat insulation structure was designed for the QD-converted yellow LEDs. In this structure, a silicone layer was set on top of the GaN LED chip to prevent directly heating of the QDs by the LED chip. Then the CsPb(BrxI1-x)3 QDs were filled in the bowl-shaped silicone layer after ultrasonic dispersion treatment. Finally, an Al2O3 passivation layer was grown on the QDs layer by Atomic Layer Disposition at 40 °C. When x = 0.55, highly pure yellow LEDs with an emission peak at ∼570 nm and a full width at half maximum of 25 nm were achieved. The chromaticity coordinates of the QD-converted yellow LEDs (0.4920 ± 0.0017, 0.4988 ± 0.0053) showed almost no variation under driving current from 5 mA to 150 mA. During an operation period of 60 min, the emission wavelength of the yellow LEDs showed no distinct shift. Moreover, the luminous efficiency of the QD-converted yellow LEDs achieved 13.51 l m/W at 6 mA. These results demonstrated that CsPb(BrxI1-x)3 QDs and the heat insulation structure are promising candidate for high purity yellow LEDs.

  15. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit; Schwingenschlö gl, Udo

    2016-01-01

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  16. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  17. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit

    2016-12-05

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  18. Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth.

    Science.gov (United States)

    Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

    2012-12-07

    Blue (InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

  19. Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth

    Science.gov (United States)

    Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

    2012-12-01

    Blue (InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

  20. 量子点转化LED封装的进展与展望%Progress and expectation of quantum dots converted light emitting diode package

    Institute of Scientific and Technical Information of China (English)

    朱永明; 谢斌; 罗小兵

    2017-01-01

    Quantum dots converted light emitting diode (QCLED) is a new-style lighting device with quantum dots (QDs) as the down conversion material.The QDs with tunable spectrum,remarkable saturation and high quantum yields result in the excellent performance of color rendering and saturation as well as the gamut of QCLED.As a consequence,the QCLED is attracting more and more attentions nowadays.Different from the traditional phosphor powders which are the down conversion material of white LED,the quantum dots are usually stored up in the fluid or solid matrix,and the most common package type of QDs is to be blended with the high polymer and then packaged into the bare LEDs.However,there are 4 crucial problems in the process of packaging:(1) The poor compatibility of QDs and high polymer matrix.Although techniques for incorporating QDs in high polymer films are well developed,the coexistence of QDs and bulk polymer matrix remains to be strengthened,or there will be some problems such as low yield of film,cluster of QDs,fluorescence quenching,and so on.(2) The poor thermal stability of QCLED.When the temperature rises,the organic ligands growing on the surface of QDs will fall off or become inactivated,then the surface defects are exposed to matrix,which will result in the reduction of fluorescence efficiency.(3) The poor stability of QDs against oxygen and moisture.The penetrative oxygen and moisture will corrode the surface ions and ligands on the surface of QDs,consequently resulting in defect trap states and furthermore the degeneration of optical performance of QCLED.(4) The optimization of optical spectrum.There are usually 3 or more spectrum distributions for QCLED light,meaning that 2 or more kinds of QDs are needed to combine with the light extracted from LED chip.In order to obtain the high performance QCLED,the collocation of the QDs and LED chip should be quite well designed.Aiming at these problems,the researchers have tried a good deal of solutions:(1) Ligand

  1. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  2. Highly Luminescent Water-Dispersible NIR-Emitting Wurtzite CuInS2/ZnS Core/Shell Colloidal Quantum Dots

    NARCIS (Netherlands)

    Xia, Chenghui; Meeldijk, Johannes D.; Gerritsen, Hans C.; De Mello Donega, Celso

    2017-01-01

    Copper indium sulfide (CIS) quantum dots (QDs) are attractive as labels for biomedical imaging, since they have large absorption coefficients across a broad spectral range, size- and composition-tunable photoluminescence from the visible to the near-infrared, and low toxicity. However, the

  3. Platelike WO3 sensitized with CdS quantum dots heterostructures for photoelectrochemical dynamic sensing of H2O2 based on enzymatic etching.

    Science.gov (United States)

    Wang, Yanhu; Gao, Chaomin; Ge, Shenguang; Yu, Jinghua; Yan, Mei

    2016-11-15

    A platelike tungsten trioxide (WO3) sensitized with CdS quantum dots (QDs) heterojunction is developed for solar-driven, real-time, and selective photoelectrochemical (PEC) sensing of H2O2 in the living cells. The structure is synthesized by hydrothermally growing platelike WO3 on fluorine doped tin oxide (FTO) and subsequently sensitized with CdS QDs. The as-prepared WO3-CdS QDs heterojunction achieve significant photocurrent enhancement, which is remarkably beneficial for light absorption and charge carrier separation. Based on the enzymatic etching of CdS QDs enables the activation of quenching the charge transfer efficiency, thus leading to sensitive PEC recording of H2O2 level in buffer and cellular environments. The results indicated that the proposed method will pave the way for the development of excellent PEC sensing platform with the quantum dot sensitization. This study could also provide a new train of thought on designing of self-operating photoanode in PEC sensing, promoting the application of semiconductor nanomaterials in photoelectrochemistry. Copyright © 2016 Elsevier B.V. All rights reserved.

  4. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  5. Quantum dot solar cell

    International Nuclear Information System (INIS)

    Ahamefula, U.C.; Sulaiman, M.Y.; Sopian, K.; Ibarahim, Z.; Ibrahim, N.; Alghoul, M.A.; Haw, L.C.; Yahya, M.; Amin, N.; Mat, S.; Ruslan, M.H.

    2009-01-01

    Full text: The much awaited desire of replacing fossil fuel with photovoltaic will remain a fairy tale if the myriad of issues facing solar cell development are marginalized. Foremost in the list is the issue of cost. Silicon has reached a stage where its use on large scale can no longer be lavishly depended upon. The demand for high grade silicon from the microelectronics and solar industries has soared leading to scarcity. New approach has to be sought. Notable is the increased attention on thin films such as cadmium telluride, copper indium gallium diselenide, amorphous silicon, and the not so thin non-crystalline family of silicon. While efforts to address the issues of stability, toxicity and efficiency of these systems are ongoing, another novel approach is quietly making its appearance - quantum dots. Quantum dots seem to be promising candidates for solar cells because of the opportunity to manipulate their energy levels allowing absorption of a wider solar spectrum. Utilization of minute quantity of these nano structures is enough to bring the cost of solar cell down and to ascertain sustainable supply of useful material. The paper outlines the progress that has been made on quantum dot solar cells. (author)

  6. Fabrication of CuInS2/ZnS quantum dots-based white light-emitting diodes with high color rendering index

    Science.gov (United States)

    Hsiao, Chih-Chun; Su, Yu-Sheng; Chung, Shu-Ru

    2017-09-01

    Among solid-state lighting technology, phosphor-converted white light-emitting diodes (pc-WLEDs) are excellent candidates to replace incandescent lamps for their merit of high energy conservation, long lifetime, high luminous efficiency as well as polarized emissions. Semiconductor quantum dots (QDs) are emerging color tunable emissive light converters. They have shown significant promise as light emitters, as solar cells, and in biological imaging. It has been demonstrated that the pc-WLED devices integrated with red emissive ZnCdSe QDs show improved color rendering index of device. However, cadmium-based QDs have limited future owing to the well-known toxicity. Recently, non-cadmium luminescence materials, i.e. CuInS2-based QDs, are investigated as desirable low toxic alternatives. Particularly, CuInS2-based QDs exhibit very broad emissions spectra with full width at half maximum (FWHM) of 100-120 nm, large Stokes shifts of 200 300 meV and finely-tunable emissions. In order to adjust emission wavelengths and improved quantum yield (QY), CuInS2/ZnS (CIS/ZnS) core/shell structure was introduced. Therefore, CIS/ZnS QDs have been extensively investigated and be used as color converter in solid-state lighting. Synthesis and application of CuInS2/ZnS core/shell QDs are conducted using a hot injection route. CIS/ZnS core/shell QDs with molar ratio of Cu:In equal to 1:4 are prepared. For WLED fabrication, the CIS/ZnS QD is dispersed in toluene first, and then it is blended with transparent acrylic-based UV resin. Subsequently, the commercial green-emitting Lu3Al5O12: Ce3+ (LuAG) phosphors are mixed with QDs-resin mixture. After that, the QDs-phosphors-resin mixtures are put in the oven at 140 °C for 1 h to evaporate the toluene. Subsequently, the homogeneous QDs-phosphors-resin mixture is dropped on the top of a blue LED chip (InGaN). Then, the device is cured by 400 W UV light to form WLED. The emission wavelength of CIS/ZnS QD exhibits yellow region of 552 nm with QY

  7. Scintillation properties of quantum-dot doped styrene based plastic scintillators

    International Nuclear Information System (INIS)

    Park, J.M.; Kim, H.J.; Hwang, Y.S.; Kim, D.H.; Park, H.W.

    2014-01-01

    We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator

  8. Scintillation properties of quantum-dot doped styrene based plastic scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Park, J.M.; Kim, H.J., E-mail: hongjooknu@gmail.com; Hwang, Y.S.; Kim, D.H.; Park, H.W.

    2014-02-15

    We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator.

  9. Potential effect of CuInS2/ZnS core-shell quantum dots on P3HT/PEDOT:PSS heterostructure based solar cell

    Science.gov (United States)

    Jindal, Shikha; Giripunje, S. M.

    2018-07-01

    Nanostructured quantum dots (QDs) are quite promising in the solar cell application due to quantum confinement effect. QDs possess multiple exciton generation and large surface area. The environment friendly CuInS2/ZnS core-shell QDs were prepared by solvothermal method. Thus, the 3 nm average sized CuInS2/ZnS QDs were employed in the bulk heterojunction device and the active blend layer consisting of the P3HT and CuInS2/ZnS QDs was investigated. The energy level information of CuInS2/ZnS QDs as an electron acceptor was explored by ultra violet photoelectron spectroscopy. Bulk heterojunction hybrid device of ITO/PEDOT:PSS/P3HT: (CuInS2/ZnS QDs)/ZnO/Ag was designed by spin coating approach and its electrical characterization was investigated by solar simulator. Current density - voltage characteristics shows the enhancement in power conversion efficiency with increasing concentration of CuInS2/ZnS QDs in bulk heterojunction device.

  10. Structural Control of InP/ZnS Core/Shell Quantum Dots Enables High-quality White LEDs.

    Science.gov (United States)

    Ganesh Kumar, Baskaran; Sadeghi, Sadra; Melikov, Rustamzhon; Mohammadi Aria, Mohammed; Bahmani Jalali, Houman; Ow-Yang, Cleva; Nizamoglu, Sedat

    2018-05-30

    Herein, we demonstrate that the structural and optical control of InP-based quantum dots can lead to high-performance LEDs. Zinc sulphide (ZnS) shells passivate the InP quantum dot core and increase the quantum yield in green-emitting quantum dots by 13-fold and red-emitting quantum dots by 8-fold. The optimised quantum dots are integrated in the liquid-state to eliminate aggregation induced emission quenching and we fabricated white LEDs with warm, neutral, and cool white appearance by the down-conversion mechanism. The quantum dot-functionalized white LEDs achieve luminous efficiency up to 14.7 lm/W and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell quantum dots enable 23-fold enhancement in luminous efficiency of white LEDs compared to ones containing only QDs of InP core. © 2018 IOP Publishing Ltd.

  11. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  12. Phosphorene quantum dots

    Science.gov (United States)

    Vishnoi, Pratap; Mazumder, Madhulika; Barua, Manaswee; Pati, Swapan K.; Rao, C. N. R.

    2018-05-01

    Phosphorene, a two-dimensional material, has been a subject of recent investigations. In the present study, we have prepared blue fluorescent phosphorene quantum dots (PQDs) by liquid phase exfoliation of black phosphorus in two non-polar solvents, toluene and mesitylene. The average particle sizes of PQDs decrease from 5.0 to 1.0 nm on increasing the sonicator power from 150 to 225 W. The photoluminescence spectrum of the PQDs is red-shifted in the 395-470 nm range on increasing the excitation-wavelength from 300 to 480 nm. Electron donor and acceptor molecules quench the photoluminescence, with the acceptors showing more marked effects.

  13. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F.; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  14. Strain-tunable quantum dot devices

    International Nuclear Information System (INIS)

    Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.

    2011-01-01

    We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.

  15. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  16. InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2011-01-01

    In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5...... layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature....

  17. A new strategy for synthesizing AgInS2 quantum dots emitting brightly in near-infrared window for in vivo imaging

    DEFF Research Database (Denmark)

    Tan, Lianjiang; Liu, Shuiping; Li, Xiaoqiang

    2015-01-01

    A new strategy for fabricating water-dispersible AgInS2 quantum dots (QDs) with bright near-infrared (NIR) emission is demonstrated. A type of multidentate polymer (MDP) was synthesized and utilized as a compact capping ligand for the AgInS2 QDs. Using silver nitrate, indium acetate and sulfur-hy...... cytotoxicity. Nude mice photoluminescence imaging shows that the MDP-capping AgInS2 QDs can be well applied to in vivo imaging. These readily prepared NIR fluorescent nanocrystals have huge potential for biomedical applications....

  18. First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots

    NARCIS (Netherlands)

    Ganguli, N.; Acharya, S.; Dasgupta, I.

    2014-01-01

    We have studied the electronic structure of CdS/ZnSe coupled quantum dots, a novel heterostructure at the nanoscale. Our calculations reveal CdS/ZnSe coupled quantum dots are type II in nature where the anion p states play an important role in deciding the band offset for the highest occupied

  19. On the crystal structure of colloidally prepared CsPbBr3 quantum dots.

    Science.gov (United States)

    Cottingham, Patrick; Brutchey, Richard L

    2016-04-18

    Colloidally synthesized quantum dots of CsPbBr3 are highly promising for light-emitting applications. Previous reports based on benchtop diffraction conflict as to the crystal structure of CsPbBr3 quantum dots. We present X-ray diffraction and PDF analysis of X-ray total scattering data that indicate that the crystal structure is unequivocally orthorhombic (Pnma).

  20. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H.

    2015-01-01

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  1. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun

    2015-07-15

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  2. TiO2/PbS/ZnS heterostructure for panchromatic quantum dot sensitized solar cells synthesized by wet chemical route

    Science.gov (United States)

    Bhat, T. S.; Mali, S. S.; Sheikh, A. D.; Korade, S. D.; Pawar, K. K.; Hong, C. K.; Kim, J. H.; Patil, P. S.

    2017-11-01

    So far we developed the efficient photoelectrodes which can harness the UV as well as the visible regime of the solar spectrum effectively. In order to exploit a maximum portion of solar spectrum, it is necessary to study the synergistic effect of a photoelectrode comprising UV and visible radiations absorbing materials. Present research work highlights the efforts to study the synchronized effect of TiO2 and PbS on the power conversion efficiency of quantum dot sensitized solar cell (QDSSC). A cascade structure of TiO2/PbS/ZnS QDSSC is achieved to enhance the photoconversion efficiency of TiO2/PbS system by incorporating a surface passivation layer of ZnS which avoids the recombination of charge carriers. A QDSSC is fabricated using a simple and cost-effective technique such as hydrothermally grown TiO2 nanorod arrays decorated with PbS and ZnS using successive ionic layer adsorption and reaction (SILAR) method. Synthesized electrode materials are characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), High resolution-transmission electron microscopy (TEM), STEM-EDS mapping, optical and solar cell performances. Phase formation of TiO2, PbS and ZnS get confirmed from the XPS study. FE-SEM images of the photoelectrode show uniform coverage of PbS QDs onto the TiO2 nanorods which increases with increasing number of SILAR cycles. The ZnS layer not only improves the charge transport but also reduces the photocorrosion of lead chalcogenides in the presence of a liquid electrolyte. Finally, the photoelectrochemical (PEC) study is carried out using an optimized photoanode comprising TiO2/PbS/ZnS assembly. Under AM 1.5G illumination the TiO2/PbS/ZnS QDSSC photoelectrode shows 4.08 mA/cm2 short circuit current density in a polysulfide electrolyte which is higher than that of a bare TiO2 nanorod array.

  3. Graphene based quantum dots.

    Science.gov (United States)

    Zhang, H G; Hu, H; Pan, Y; Mao, J H; Gao, M; Guo, H M; Du, S X; Greber, T; Gao, H-J

    2010-08-04

    Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

  4. Small-signal modulation and differential gain of red-emitting (λ = 630 nm) InGaN/GaN quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Frost, Thomas; Banerjee, Animesh; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2013-11-18

    We report small-signal modulation bandwidth and differential gain measurements of a ridge waveguide In{sub 0.4}Ga{sub 0.6}N/GaN quantum dot laser grown by molecular beam epitaxy. The laser peak emission is at λ = 630 nm. The −3 dB bandwidth of an 800 μm long device was measured to be 2.4 GHz at 250 mA under pulsed biasing, demonstrating the possibility of high-speed operation of these devices. The differential gain was measured to be 5.3 × 10{sup −17} cm{sup 2}, and a gain compression factor of 2.87 × 10{sup −17} cm{sup 3} is also derived from the small-signal modulation response.

  5. InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 μm region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 μm is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations

  6. Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

    Science.gov (United States)

    Bracker, A. S.; Stinaff, E. A.; Gammon, D.; Ware, M. E.; Tischler, J. G.; Shabaev, A.; Efros, Al. L.; Park, D.; Gershoni, D.; Korenev, V. L.; Merkulov, I. A.

    2005-02-01

    We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

  7. Rainbow Emission from an Atomic Transition in Doped Quantum Dots.

    Science.gov (United States)

    Hazarika, Abhijit; Pandey, Anshu; Sarma, D D

    2014-07-03

    Although semiconductor quantum dots are promising materials for displays and lighting due to their tunable emissions, these materials also suffer from the serious disadvantage of self-absorption of emitted light. The reabsorption of emitted light is a serious loss mechanism in practical situations because most phosphors exhibit subunity quantum yields. Manganese-based phosphors that also exhibit high stability and quantum efficiency do not suffer from this problem but in turn lack emission tunability, seriously affecting their practical utility. Here, we present a class of manganese-doped quantum dot materials, where strain is used to tune the wavelength of the dopant emission, extending the otherwise limited emission tunability over the yellow-orange range for manganese ions to almost the entire visible spectrum covering all colors from blue to red. These new materials thus combine the advantages of both quantum dots and conventional doped phosphors, thereby opening new possibilities for a wide range of applications in the future.

  8. Quantum dots: Rethinking the electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bishnoi, Dimple [Department of Physics, S. S. Jain Subodh PG College, Jaipur, Rajasthan Pin-302004 (India)

    2016-05-06

    In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

  9. Quadra-Quantum Dots and Related Patterns of Quantum Dot Molecules: Basic Nanostructures for Quantum Dot Cellular Automata Application

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.

  10. Layer-by-layer assembly of multicolored semiconductor quantum dots towards efficient blue, green, red and full color optical films

    International Nuclear Information System (INIS)

    Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang

    2008-01-01

    Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.

  11. Light effects in asymmetric vertically coupled InAs/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Stavrou, V.N., E-mail: vstavrou@newton.physics.uiowa.edu

    2015-12-15

    In this paper, the dependence of circular light polarization on the size asymmetry of self-assembled coupled quantum dots (SACQDs) has been studied. The heterostructure consists of ellipsoidal shaped QDs made with InAs which are embedded in a wetting layer and are surrounded by GaAs. By considering fully spin-polarized carriers within the QD structure, the light polarization has been estimated along the plane of spin polarized electrons (or holes). Circularly polarized light strongly depends on the ratio related to the different QD volumes. In the case of elongated QDs, small interdot distance and large volume ratio, the light polarization observed along the plane (110) receives the largest value (∼90%). On the other hand, the polarization efficiency of the emitted light decreases as the QD elongation decreases and finally vanishes for axially symmetric QD caps.

  12. Quantum dots and nanocomposites.

    Science.gov (United States)

    Mansur, Herman Sander

    2010-01-01

    Quantum dots (QDs), also known as semiconducting nanoparticles, are promising zero-dimensional advanced materials because of their nanoscale size and because they can be engineered to suit particular applications such as nonlinear optical devices (NLO), electro-optical devices, and computing applications. QDs can be joined to polymers in order to produce nanocomposites which can be considered a scientific revolution of the 21st century. One of the fastest moving and most exciting interfaces of nanotechnology is the use of QDs in medicine, cell and molecular biology. Recent advances in nanomaterials have produced a new class of markers and probes by conjugating semiconductor QDs with biomolecules that have affinities for binding with selected biological structures. The nanoscale of QDs ensures that they do not scatter light at visible or longer wavelengths, which is important in order to minimize optical losses in practical applications. Moreover, at this scale, quantum confinement and surface effects become very important and therefore manipulation of the dot diameter or modification of its surface allows the properties of the dot to be controlled. Quantum confinement affects the absorption and emission of photons from the dot. Thus, the absorption edge of a material can be tuned by control of the particle size. This paper reviews developments in the myriad of possibilities for the use of semiconductor QDs associated with molecules producing novel hybrid nanocomposite systems for nanomedicine and bioengineering applications.

  13. Bluish green emitting carbon quantum dots synthesized from jackfruit (Artocarpus heterophyllus) and its sensing applications of Hg (II) and Cr (VI) ions

    Science.gov (United States)

    Rajendran, Kalimuthu; Rajendiran, Nagappan

    2018-02-01

    A simple, economical, and green method for the preparation of water soluble, high fluorescent carbon quantum dots (CQDs) has been prepared via hydrothermal process using jackfruit (Artocarpus heterophyllus) as a carbon source. The optical properties of synthesized CQDs were characterized by UV- visible and fluorescence spectroscopy. Fourier transform infrared spectroscopy (FT-IR), x-ray Diffraction (XRD) and high resolution transmission electron microscopy (HR-TEM) techniques were used to study the composition and size of the CQDs. The prepared CQDs were spherical in shape with an average size of 2.5 nm along with uniform distribution and showed bright bluish green emission properties, without any further surface modification. The prepared CQDs were exhibit high stability at neutral pH and showed high photo-stability under UV light irradiation at 365 nm. The obtained CQDs were effectively utilized as fluorescent probe for highly selective and sensitive detection of Hg2+ and Cr6+ ions in environmental samples with a limit of detection of about 8 and 10 nM respectively.

  14. Electroluminescence of colloidal ZnSe quantum dots

    International Nuclear Information System (INIS)

    Dey, S.C.; Nath, S.S.

    2011-01-01

    The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

  15. Exploring Graphene Quantum Dots/TiO2 interface in photoelectrochemical reactions: Solar to fuel conversion

    International Nuclear Information System (INIS)

    Sudhagar, Pitchaimuthu; Herraiz-Cardona, Isaac; Park, Hun; Song, Taesup; Noh, Seung Hyun; Gimenez, Sixto; Sero, Ivan Mora; Fabregat-Santiago, Francisco; Bisquert, Juan; Terashima, Chiaki; Paik, Ungyu; Kang, Yong Soo

    2016-01-01

    photoelectrochemical fuel generation systems. In this work, we demonstrate direct assembly of surface modified graphene quantum dots (∼2 nm particle size) onto TiO 2 hollow nanowire (∼3 μm in length and ∼100 to 250 nm in diameter) by electrostatic attraction and examine the photocarrier accumulation and recombination processes leading to device operation. Optical characterization reveals that GQDs absorbed light photons at visible light wavelength up to 600 nm. Hybrid TiO 2 -GQDs heterostructures show a photocurrent enhancement of ∼70% for water oxidation compared to pristine TiO 2 using sacrificial-free electrolyte, which is further validated by incident photon to current efficiency. Additionally, the charge accumulation processes and charge transfer characteristics are investigated by electrochemical impedance spectroscopy. These results provide the platform to understand the insights of graphene quantum dots/metal oxide interfaces in PEC reactions and discuss the feasibility of graphene quantum dots in wide range of electrochemical and photoelectrochemical based fuel conversion devices.

  16. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, and light emitting diodes. The unique properties of these...

  17. High Efficiency Quantum Dot III-V Thermophotovoltaic Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, light emitting diodes and solar cells. The unique...

  18. Electrical control of single hole spins in nanowire quantum dots.

    Science.gov (United States)

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  19. Quantum dots for lasers, amplifiers and computing

    International Nuclear Information System (INIS)

    Bimberg, Dieter

    2005-01-01

    For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s -1 at room temperature is demonstrated, at 10 Gb s -1 the bit error rate is below 10 -12 at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 μm, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot semiconductor optical amplifier (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm*QD-layer) providing us with novel types of booster amplifiers and Mach-Zehnder interferometers. These breakthroughs became possible due to systematic development of self-organized growth technologies

  20. Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Yvind, Kresten

    2011-01-01

    The emission wavelength of InAs quantum dots grown on InP has been shown to shift to the technologically desirable 1.5μm with the deposition of 1–2 monolayers of GaAs on top of the quantum dots. Here, we use aberration-corrected scanning transmission electron microscopy to investigate morphological...... and compositional changes occurring to the quantum dots as a result of the deposition of 1.7 monolayers of GaAs on top of them, prior to complete overgrowth with InP. The results are compared with theoretical models describing the overgrowth process....

  1. Efficient spin filter using multi-terminal quantum dot with spin-orbit interaction

    Directory of Open Access Journals (Sweden)

    Yokoyama Tomohiro

    2011-01-01

    Full Text Available Abstract We propose a multi-terminal spin filter using a quantum dot with spin-orbit interaction. First, we formulate the spin Hall effect (SHE in a quantum dot connected to three leads. We show that the SHE is significantly enhanced by the resonant tunneling if the level spacing in the quantum dot is smaller than the level broadening. We stress that the SHE is tunable by changing the tunnel coupling to the third lead. Next, we perform a numerical simulation for a multi-terminal spin filter using a quantum dot fabricated on semiconductor heterostructures. The spin filter shows an efficiency of more than 50% when the conditions for the enhanced SHE are satisfied. PACS numbers: 72.25.Dc,71.70.Ej,73.63.Kv,85.75.-d

  2. Near-infrared quantum dots for HER2 localization and imaging of cancer cells.

    Science.gov (United States)

    Rizvi, Sarwat B; Rouhi, Sepideh; Taniguchi, Shohei; Yang, Shi Yu; Green, Mark; Keshtgar, Mo; Seifalian, Alexander M

    2014-01-01

    Quantum dots are fluorescent nanoparticles with unique photophysical properties that allow them to be used as diagnostic, therapeutic, and theranostic agents, particularly in medical and surgical oncology. Near-infrared-emitting quantum dots can be visualized in deep tissues because the biological window is transparent to these wavelengths. Their small sizes and free surface reactive groups that can be conjugated to biomolecules make them ideal probes for in vivo cancer localization, targeted chemotherapy, and image-guided cancer surgery. The human epidermal growth factor receptor 2 gene (HER2/neu) is overexpressed in 25%-30% of breast cancers. The current methods of detection for HER2 status, including immunohistochemistry and fluorescence in situ hybridization, are used ex vivo and cannot be used in vivo. In this paper, we demonstrate the application of near-infrared-emitting quantum dots for HER2 localization in fixed and live cancer cells as a first step prior to their in vivo application. Near-infrared-emitting quantum dots were characterized and their in vitro toxicity was established using three cancer cell lines, ie, HepG2, SK-BR-3 (HER2-overexpressing), and MCF7 (HER2-underexpressing). Mouse antihuman anti-HER2 monoclonal antibody was conjugated to the near-infrared-emitting quantum dots. In vitro toxicity studies showed biocompatibility of SK-BR-3 and MCF7 cell lines with near-infrared-emitting quantum dots at a concentration of 60 μg/mL after one hour and 24 hours of exposure. Near-infrared-emitting quantum dot antiHER2-antibody bioconjugates successfully localized HER2 receptors on SK-BR-3 cells. Near-infrared-emitting quantum dot bioconjugates can be used for rapid localization of HER2 receptors and can potentially be used for targeted therapy as well as image-guided surgery.

  3. Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

    Science.gov (United States)

    Bhaumik, Saikat; Pal, Amlan J

    2014-07-23

    We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

  4. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2015-07-27

    We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

  5. Control of dynamic properties of InAs/InAlGaAs/InP hybrid quantum well-quantum dot structures designed as active parts of 1.55 μm emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Rudno-Rudzinski, Wojciech; Syperek, Marcin; Marynski, Aleksander; Andrzejewski, Janusz; Misiewicz, Jan; Sek, Grzegorz [Faculty of Fundamental Problems of Technology, Department of Experimental Physics, Wroclaw University of Science and Technology, Wroclaw (Poland); Bauer, Sven; Sichkovskyi, Vitalii I.; Reithmaier, Johann P. [Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel (Germany); Schowalter, Marco; Gerken, Beeke; Rosenauer, Andreas [Institute of Solid State Physics, Universitaet Bremen (Germany)

    2018-02-15

    The molecular beam epitaxy grown structures are investigated, comprising of InGaAs quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs), emitting at 1.55 μm, grown on an InP substrate. To control the coupling between QW and QD parts the thickness of the barrier is changed, which commands the wave function overlap. The tuning of that parameter allows for the study of the influence of the QW potential on the energy structure of states and their wave functions in QDs, changing from an uncoupled system, where the optical response is just a sum of responses from two isolated elements, to a strongly quantum mechanically coupled system, exhibiting mixed 2D-0D characteristics. The changes of the energy structure that are deduced from the photoreflectance and photoluminescence spectroscopy results, supported by 8-band k . p modeling, explain the measured differences in the photoluminescence decay times between samples with different barrier thicknesses. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

    Directory of Open Access Journals (Sweden)

    Tsung-Han Tsai

    2015-01-01

    Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

  7. Quantum optics with single quantum dot devices

    International Nuclear Information System (INIS)

    Zwiller, Valery; Aichele, Thomas; Benson, Oliver

    2004-01-01

    A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots

  8. Large quantum dots with small oscillator strength

    DEFF Research Database (Denmark)

    Stobbe, Søren; Schlereth, T.W.; Höfling, S.

    2010-01-01

    We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....

  9. Nuclear Spins in Quantum Dots

    NARCIS (Netherlands)

    Erlingsson, S.I.

    2003-01-01

    The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis,

  10. Polymer-coated quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Liu, Rongrong; Vancso, Gyula J.

    2013-01-01

    Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of

  11. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

    2014-01-01

    Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

  12. Spin storage in quantum dot ensembles and single quantum dots

    International Nuclear Information System (INIS)

    Heiss, Dominik

    2009-01-01

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

  13. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  14. Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.

  15. Tuning Single Quantum Dot Emission with a Micromirror.

    Science.gov (United States)

    Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

    2018-02-14

    The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

  16. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    International Nuclear Information System (INIS)

    Moldavskaya, L. D.; Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

    2008-01-01

    A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10 9 cm Hz 1/2 W -1

  17. Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

    2003-01-01

    A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin...

  18. A InGaN/GaN quantum dot green (λ=524 nm) laser

    KAUST Repository

    Zhang, Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-01-01

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching

  19. Polarization anisotropy of the emission from type-II quantum dots

    Czech Academy of Sciences Publication Activity Database

    Klenovský, P.; Hemzal, D.; Steindl, P.; Zíková, Markéta; Křápek, V.; Humlíček, J.

    2015-01-01

    Roč. 92, č. 24 (2015), 1-5, č. článku 241302. ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dot * type II heterostructure * polarization anisotropy * III-V semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  20. Designing artificial 2D crystals with site and size controlled quantum dots.

    Science.gov (United States)

    Xie, Xuejun; Kang, Jiahao; Cao, Wei; Chu, Jae Hwan; Gong, Yongji; Ajayan, Pulickel M; Banerjee, Kaustav

    2017-08-30

    Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS 2 ), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS 2 . By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.

  1. Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

    Directory of Open Access Journals (Sweden)

    Maronchuk I. E.

    2008-12-01

    Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

  2. Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

    Czech Academy of Sciences Publication Activity Database

    Walachová, Jarmila; Zelinka, Jiří; Leshkov, Sergey; Šroubek, Filip; Pangrác, Jiří; Vaniš, Jan

    2013-01-01

    Roč. 48, č. 1 (2013), s. 61-65 ISSN 1386-9477 R&D Projects: GA ČR GPP102/11/P824; GA ČR GAP102/10/1201 Institutional research plan: CEZ:AV0Z10100521 Institutional support: RVO:67985882 ; RVO:68378271 ; RVO:67985556 Keywords : quantum dots * scanning tunneling microscopy * ballistic transport Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.856, year: 2013

  3. Quantum Dot-based Immunohistochemistry for Pathological Applications

    Directory of Open Access Journals (Sweden)

    Li Zhou

    2016-01-01

    Full Text Available Quantum dots (QDs are novel light emitting semiconductor nanocrystals with diameter ranging from 2 to 20 nm. In comparison with traditional organic dyes and fluorescent proteins, QDs possess unique optical properties including extremely high fluorescence efficiency and minimal photobleaching which make them emerge as a new class of fluorescent labels for molecular imaging and biomedical analysis. Herein, recent advances in fundamental mechanisms and pathological applications of QD were reviewed.

  4. Controlling electron quantum dot qubits by spin-orbit interactions

    International Nuclear Information System (INIS)

    Stano, P.

    2007-01-01

    Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)

  5. Controlling electron quantum dot qubits by spin-orbit interactions

    Energy Technology Data Exchange (ETDEWEB)

    Stano, P.

    2007-01-15

    Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)

  6. Dark-red-emitting CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots: Effect of chemicals on properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

    2013-08-15

    CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling.

  7. Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

    International Nuclear Information System (INIS)

    Yang, Ping; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

    2013-01-01

    CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling

  8. Diffusion thermopower of a serial double quantum dot

    International Nuclear Information System (INIS)

    Thierschmann, H; Henke, M; Knorr, J; Maier, L; Buhmann, H; Molenkamp, L W; Heyn, C; Hansen, W

    2013-01-01

    We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference ΔT = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport. (paper)

  9. Ultrafast optical control of individual quantum dot spin qubits.

    Science.gov (United States)

    De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

    2013-09-01

    Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a 'flying' photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin-spin entanglement can be generated if each spin can emit a photon that is entangled

  10. Temperature-dependent measurement of Auger recombination in In{sub 0.40}Ga{sub 0.60}N/GaN red-emitting (λ = 630 nm) quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Frost, Thomas; Banerjee, Animesh; Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2014-02-24

    We have derived the Auger recombination coefficients, as a function of temperature, for In{sub 0.4}Ga{sub 0.6}N/GaN self-organized quantum dots from large-signal modulation measurements made on lasers in which the quantum dots form the gain media. The value of C{sub a} = 1.3 ±0.2 × 10{sup −31} cm{sup 6} s{sup −1} at room temperature and the coefficient decreases with increase of temperature.

  11. Millimeter Wave Modulators Using Quantum Dots

    National Research Council Canada - National Science Library

    Prather, Dennis W

    2008-01-01

    In this effort electro-optic modulators for millimeter wave sensing and imaging were developed and demonstrated via design, fabrication, and experimental characterization of multi layer quantum dot...

  12. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    Science.gov (United States)

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  13. Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

    Science.gov (United States)

    Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

    2018-02-01

    We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

  14. Detecting strain wave propagation through quantum dots by pump-probe spectroscopy: A theoretical analysis

    International Nuclear Information System (INIS)

    Huneke, J; Kuhn, T; Axt, V M

    2010-01-01

    The influence of strain waves traveling across a quantum dot structure on its optical response is studied for two different situations: First, a strain wave is created by the optical excitation of a single quantum dot near a surface which, after reflection at the surface, reenters the dot; second, a phonon wave packet is emitted by the excitation of a nearby second dot and then travels across the quantum dot. Pump-probe type excitations are simulated for quantum dots in the strong confinement limit. We show that the optical signals allow us to monitor crossing strain waves for both structures in the real-time response as well as in the corresponding pump-probe spectra. In the time-derivative of the phase of the polarization a distinct trace reflects the instantaneous shifts of the transition energy during the passage while in the spectra pronounced oscillations reveal the passage of the strain waves.

  15. Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

    Science.gov (United States)

    Bracker, Allan; Gershoni, David; Korenev, Vladimir

    2005-03-01

    We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

  16. Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

    KAUST Repository

    Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

    2015-01-01

    Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting

  17. Nearly suppressed photoluminescence blinking of small-sized, blue-green-orange-red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield.

    Science.gov (United States)

    Roy, Debjit; Mandal, Saptarshi; De, Chayan K; Kumar, Kaushalendra; Mandal, Prasun K

    2018-04-18

    CdSe-based core/gradient alloy shell/shell semiconductor quantum dots (CGASS QDs) have been shown to be optically quite superior compared to core-shell QDs. However, very little is known about CGASS QDs at the single particle level. Photoluminescence blinking dynamics of four differently emitting (blue (λem = 510), green (λem = 532), orange (λem = 591), and red (λem = 619)) single CGASS QDs having average sizes 600 nm). In this manuscript, we report nearly suppressed PL blinking behaviour of CGASS QDs with average sizes correlation between the event durations and found that residual memory exists in both the ON- and OFF-event durations. Positively correlated successive ON-ON and OFF-OFF event durations and negatively correlated (anti-correlated) ON-OFF event durations perhaps suggest the involvement of more than one type of trapping process within the blinking framework. The timescale corresponding to the additional exponential term has been assigned to hole trapping for ON-event duration statistics. Similarly, for OFF-event duration statistics, this component suggests hole detrapping. We found that the average duration of the exponential process for the ON-event durations is an order of magnitude higher than that of the OFF-event durations. This indicates that the holes are trapped for a significantly long time. When electron trapping is followed by such a hole trapping, long ON-event durations result. We have observed long ON-event durations, as high as 50 s. The competing charge tunnelling model has been used to account for the observed blinking behaviour in these CGASS QDs. Quite interestingly, the PLQY of all of these differently emitting QDs (an ensemble level property) could be correlated with the truncation time (a property at the single particle level). A respective concomitant increase-decrease of ON-OFF event truncation times with increasing PLQY is also indicative of a varying degree of suppression of the Auger recombination processes in these four

  18. Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

    Science.gov (United States)

    Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

    2018-04-18

    All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

  19. Stark shifting two-electron quantum dot

    International Nuclear Information System (INIS)

    Dineykhan, M.; Zhaugasheva, S.A.; Duysebaeva, K.S.

    2003-01-01

    Advances in modern technology make it possible to create semiconducting nano-structures (quantum dot) in which a finite number of electrons are 'captured' in a bounded volume. A quantum dot is associated with a quantum well formed at the interface, between two finite-size semiconductors owing to different positions of the forbidden gaps on the energy scale in these semiconductors. The possibility of monitoring and controlling the properties of quantum dots attracts considerable attention to these objects, as a new elemental basis for future generations of computers. The quantum-mechanical effects and image potential play a significant role in the description of the formation mechanism quantum dot, and determined the confinement potential in a two-electron quantum dot only for the spherical symmetric case. In the present talk, we considered the formation dynamics of two-electron quantum dot with violation of spherical symmetry. So, we have standard Stark potential. The energy spectrum two-electron quantum dot were calculated. Usually Stark interactions determined the tunneling phenomena between quantum dots

  20. Optical Properties of Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Perinetti, U.

    2011-01-01

    This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

  1. Thick-shell nanocrystal quantum dots

    Science.gov (United States)

    Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  2. Capture, relaxation and recombination in quantum dots

    NARCIS (Netherlands)

    Sreenivasan, D.

    2008-01-01

    Quantum dots (QDs) have attracted a lot of interest both from application and fundamental physics point of view. A semiconductor quantum dot features discrete atomiclike energy levels, despite the fact that it contains many atoms within its surroundings. The discrete energy levels give rise to very

  3. Electron correlations in quantum dots

    International Nuclear Information System (INIS)

    Tipton, Denver Leonard John

    2001-01-01

    Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining potential. In this so-called 'Wigner' regime the ground-state electronic charge density is localised near positions of classical electrostatic minima and the interacting electronic spectrum consists of well separated spin multiplets. In the strongly correlated regime the structure of low-energy multiplets is explained by mapping onto lattice models with extended-Hubbard and Heisenberg effective Hamiltonians. The parameters for these effective models are calculated within a Hartree approximation and are shown to reproduce well the exact results obtained by numerical diagonalisation of the full interacting Hamiltonian. Comparison is made between square dots and quantum rings with full rotational symmetry. In the very low-density regime, direct diagonalisation becomes impractical due to excessive computer time for convergence. In this regime a numerical renormalisation group method is applied to one-dimensional dots, enabling effective spin-interactions to be

  4. Hydrogenic impurity in double quantum dots

    International Nuclear Information System (INIS)

    Wang, X.F.

    2007-01-01

    The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

  5. Biocompatible Quantum Dots for Biological Applications

    Science.gov (United States)

    Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

  6. Magnon-driven quantum dot refrigerators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan, E-mail: jcchen@xmu.edu.cn

    2015-12-18

    Highlights: • A three-terminal quantum dot refrigerator is proposed. • The effects of magnetic field, applied voltage, and polarization are considered. • The region that the system can work as a refrigerator is determined. • Two different magnon-driven quantum dot refrigerators are compared. - Abstract: A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.

  7. Multi-Excitonic Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

  8. Temperature-Dependent Coercive Field Measured by a Quantum Dot Strain Gauge.

    Science.gov (United States)

    Chen, Yan; Zhang, Yang; Keil, Robert; Zopf, Michael; Ding, Fei; Schmidt, Oliver G

    2017-12-13

    Coercive fields of piezoelectric materials can be strongly influenced by environmental temperature. We investigate this influence using a heterostructure consisting of a single crystal piezoelectric film and a quantum dots containing membrane. Applying electric field leads to a physical deformation of the piezoelectric film, thereby inducing strain in the quantum dots and thus modifying their optical properties. The wavelength of the quantum dot emission shows butterfly-like loops, from which the coercive fields are directly derived. The results suggest that coercive fields at cryogenic temperatures are strongly increased, yielding values several tens of times larger than those at room temperature. We adapt a theoretical model to fit the measured data with very high agreement. Our work provides an efficient framework for predicting the properties of ferroelectric materials and advocating their practical applications, especially at low temperatures.

  9. 20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

    Science.gov (United States)

    Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

    2009-02-01

    We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

  10. Electron transport in quantum dots

    CERN Document Server

    2003-01-01

    When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...

  11. Application of Inkjet Printing in High-Density Pixelated RGB Quantum Dot-Hybrid LEDs

    KAUST Repository

    Haverinen, Hanna; Jabbour, Ghassan E.

    2012-01-01

    to fabricate high-density, pixelated (quarter video graphics array (QVGA) format), monochromatic and RGB quantum dots light-emitting diodes (QDLEDs), where inkjet printing is used to deposit the light-emitting layer of QDs. It shows some of the factors

  12. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

    Science.gov (United States)

    de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

    2017-10-31

    Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

  13. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  14. Biosynthesis of luminescent quantum dots in an earthworm

    Science.gov (United States)

    Stürzenbaum, S. R.; Höckner, M.; Panneerselvam, A.; Levitt, J.; Bouillard, J.-S.; Taniguchi, S.; Dailey, L.-A.; Khanbeigi, R. Ahmad; Rosca, E. V.; Thanou, M.; Suhling, K.; Zayats, A. V.; Green, M.

    2013-01-01

    The synthesis of designer solid-state materials by living organisms is an emerging field in bio-nanotechnology. Key examples include the use of engineered viruses as templates for cobalt oxide (Co3O4) particles, superparamagnetic cobalt-platinum alloy nanowires and gold-cobalt oxide nanowires for photovoltaic and battery-related applications. Here, we show that the earthworm's metal detoxification pathway can be exploited to produce luminescent, water-soluble semiconductor cadmium telluride (CdTe) quantum dots that emit in the green region of the visible spectrum when excited in the ultraviolet region. Standard wild-type Lumbricus rubellus earthworms were exposed to soil spiked with CdCl2 and Na2TeO3 salts for 11 days. Luminescent quantum dots were isolated from chloragogenous tissues surrounding the gut of the worm, and were successfully used in live-cell imaging. The addition of polyethylene glycol on the surface of the quantum dots allowed for non-targeted, fluid-phase uptake by macrophage cells.

  15. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

    International Nuclear Information System (INIS)

    Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.

    2014-01-01

    A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped

  16. Quantum dots for quantum information technologies

    CERN Document Server

    2017-01-01

    This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

  17. Quantum dot devices for optical communications

    DEFF Research Database (Denmark)

    Mørk, Jesper

    2005-01-01

    -low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record...

  18. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  19. Optical Signatures of Coupled Quantum Dots

    Science.gov (United States)

    Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Korenev, V. L.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.

    2006-02-01

    An asymmetric pair of coupled InAs quantum dots is tuned into resonance by applying an electric field so that a single hole forms a coherent molecular wave function. The optical spectrum shows a rich pattern of level anticrossings and crossings that can be understood as a superposition of charge and spin configurations of the two dots. Coulomb interactions shift the molecular resonance of the optically excited state (charged exciton) with respect to the ground state (single charge), enabling light-induced coupling of the quantum dots. This result demonstrates the possibility of optically coupling quantum dots for application in quantum information processing.

  20. Circularly organized quantum dot nanostructures of Ge on Si substrates

    International Nuclear Information System (INIS)

    Cai, Qijia; Chen, Peixuan; Zhong, Zhenyang; Jiang, Zuimin; Lu, Fang; An, Zhenghua

    2009-01-01

    A novel circularly arranged structure of germanium quantum dots has been fabricated by combining techniques including electron beam lithography, wet etching and molecular beam epitaxy. It was observed that both pattern and growth parameters affect the morphology of the quantum dot molecules. Meanwhile, the oxidation mask plays a vital role in the formation of circularly organized quantum dots. The experimental results demonstrate the possibilities of investigating the properties of quantum dot molecules as well as single quantum dots

  1. Thermoelectric transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Lukas Heinrich

    2016-06-30

    In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum

  2. Chiral Responsive Liquid Quantum Dots.

    Science.gov (United States)

    Zhang, Jin; Ma, Junkai; Shi, Fangdan; Tian, Demei; Li, Haibing

    2017-08-01

    How to convert the weak chiral-interaction into the macroscopic properties of materials remains a huge challenge. Here, this study develops highly fluorescent, selectively chiral-responsive liquid quantum dots (liquid QDs) based on the hydrophobic interaction between the chiral chains and the oleic acid-stabilized QDs, which have been designated as (S)-1810-QDs. The fluorescence spectrum and liquidity of thermal control demonstrate the fluorescence properties and the fluidic behavior of (S)-1810-QDs in the solvent-free state. Especially, (S)-1810-QDs exhibit a highly chiral-selective response toward (1R, 2S)-2-amino-1,2-diphenyl ethanol. It is anticipated that this study will facilitate the construction of smart chiral fluidic sensors. More importantly, (S)-1810-QDs can become an attractive material for chiral separation. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman; Pan, Jun; El-Ballouli, Ala'a O.; Knudsen, Kristian Rahbek; Abdelhady, Ahmed L.

    2015-01-01

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments

  4. Electron Transport in Coupled Quantum Dots

    National Research Council Canada - National Science Library

    Antoniadis, D

    1998-01-01

    In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...

  5. Synthetic Developments of Nontoxic Quantum Dots.

    Science.gov (United States)

    Das, Adita; Snee, Preston T

    2016-03-03

    Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Optical Studies of Single Quantum Dots

    National Research Council Canada - National Science Library

    Gammon, Daniel; Steel, Duncan G

    2002-01-01

    ...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...

  7. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.; Sargent, Edward H.

    2011-01-01

    spectrum. CQD materials' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements

  8. Quantum dot laser optimization: selectively doped layers

    Science.gov (United States)

    Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

    2016-08-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

  9. Quantum dot laser optimization: selectively doped layers

    International Nuclear Information System (INIS)

    Korenev, Vladimir V; Konoplev, Sergey S; Savelyev, Artem V; Shernyakov, Yurii M; Maximov, Mikhail V; Zhukov, Alexey E

    2016-01-01

    Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics. (paper)

  10. Silicon Quantum Dots for Quantum Information Processing

    Science.gov (United States)

    2013-11-01

    S. Lai, C. Tahan, A. Morello and A. S. Dzurak, Electron Spin lifetimes in multi-valley sil- icon quantum dots, S3NANO Winter School Few spin solid...lifetimes in multi-valley sil- icon quantum dots, International Workshop on Silicon Quantum Electronics, Grenoble, France, February 2012 (Poster). C...typically plunger gates), PMMA A5 is spun at 5000 rpm for 30 seconds, resulting in a 280 nm resist thickness. The resists are baked for 90 seconds at 180

  11. Exciton in type-II quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Sierra-Ortega, J; Escorcia, R A [Universidad del Magdalena, A. A. 731, Santa Marta (Colombia); Mikhailov, I D, E-mail: jsierraortega@gmail.co [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia)

    2009-05-01

    We study the quantum-size effect and the influence of the external magnetic field on the exciton ground state energy in the type-II InP quantum disk, lens and pyramid deposited on a wetting layer and embedded in a GaInP matrix. We show that the charge distribution over and below quantum dot and wetting layer induced by trapped exciton strongly depends on the quantum dot morphology and the strength of the magnetic field.

  12. Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

    NARCIS (Netherlands)

    Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.

    2004-01-01

    We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we

  13. Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

    Science.gov (United States)

    Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

    2015-07-01

    Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

  14. Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

    Science.gov (United States)

    Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

    2018-05-10

    Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

  15. Semiconductor Quantum Dots with Photoresponsive Ligands.

    Science.gov (United States)

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  16. Single electron-spin memory with a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

    2007-01-01

    We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

  17. Microscale memory characteristics of virus-quantum dot hybrids

    Science.gov (United States)

    Portney, Nathaniel G.; Tseng, Ricky J.; Destito, Giuseppe; Strable, Erica; Yang, Yang; Manchester, Marianne; Finn, M. G.; Ozkan, Mihrimah

    2007-05-01

    An electrical multi stability effect was observed for a single layer device fabricated, comprising a hybrid virus-semiconducting quantum dot (CdSe /ZnS core/shell Qds) assembled onto icosahedral-mutant-virus template (CPMV-T184C). A substrate based bottom-up pathway was used to conjugate two different color emitting Qds for fluorescence visualization and to insert a charging/decharging factor. Pulsed wave measurements depicted distinct conductive states with repeatable and nonvolatile behavior as a functioning memory element.

  18. Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

    Science.gov (United States)

    Liu, Weiwen

    The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

  19. Two path transport measurements on a triple quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Rogge, Maximilian C.; Haug, Rolf J. [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover, Appelstr. 2, 30167 Hannover (Germany)

    2008-07-01

    We present a novel triple quantum dot device made with local anodic oxidation on a GaAs/AlGaAs heterostructure. The geometry provides two path transport via a three lead setup with each lead connected to one of the three quantum dots. In addition charge detection is implemented via a quantum point contact. One lead is used as a common source contact, the other two are used as two separate drain contacts with independent current measurement. Thus two paths are formed with two dots in each path. Along both paths serial transport is observed at the triple points of the two corresponding dots. With four side gates a wide tunability is given. Thus the system can be tuned in and out of triple dot resonances. When all three dots come into resonance, quadruple points are formed with simultaneous transport along both paths. The data are analysed in combined two colour plots and compared to the charge detection showing sets of three different lines, one for each dot. This way the two path setup allows to investigate the transition from double dot physics to triple dot physics.

  20. A review of nano-optics in metamaterial hybrid heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  1. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

    NARCIS (Netherlands)

    Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

    Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

  2. Quantum-dot nano-cavity lasers with Purcell-enhanced stimulated emission

    DEFF Research Database (Denmark)

    Gregersen, Niels; Skovgård, Troels Suhr; Lorke, Michael

    2012-01-01

    We present a rate equation model for quantum-dot light-emitting devices that take into account Purcell enhancement of both spontaneous emission and stimulated emission as well as the spectral profile of the optical and electronic density-of-states. We find that below threshold the b-factor in a q...

  3. Submonolayer Quantum Dot Infrared Photodetector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  4. Formation and properties of selected quantum dots in maize amylopectin matrix

    Energy Technology Data Exchange (ETDEWEB)

    Khachatryan, Karen, E-mail: rrchacza@cyf-kr.edu.pl [Department of Chemistry and Physics, Agricultural University, Balicka Street 122, 30 149 Krakow (Poland); Khachatryan, Gohar; Fiedorowicz, Maciej [Department of Chemistry and Physics, Agricultural University, Balicka Street 122, 30 149 Krakow (Poland); Tomasik, Piotr [Krakow College of Health Promotion, Krowoderska Street 73, 31 158 Krakow (Poland)

    2014-09-01

    Highlights: • Synthesis of quantum dots in aqueous gel of amylopectin. • Generation of quantum dots in non-ionic polysaccharide. • Preparation of CdS, Ga{sub 2}S{sub 3} and ZnS quantum dots of the size below 10 nm. • The amylopectin matrix is not suitable for generation of CaS and Cs{sub 2}S quantum dots. - Abstract: CdS, ZnS, Ga{sub 2}S{sub 3}, CaS and Cs{sub 2}S quantum dots (QDs) were generated in the amylopectin (Ap) matrix. They all emitted a light between 460 (ZnS) and 475 (CdS) nm. Sizes of Ga{sub 2}S{sub 3} and CdS QDs were 7–9 nm and 5–7 nm, respectively. Single ZnS QDs had 6–7 nm but they readily aggregated. The CaS and Cs{sub 2}S appeared mainly as 30–100 nm aggregates. There were no significant interactions between QDs and the Ap matrix. Presented method appeared unsuitable for the generation of CaS and Cs{sub 2}S QDs as they as well as their substrates [Ca(NO{sub 3}){sub 2}] hydrolyzed. Calcium compounds formed complexes with Ap and alkaline solution from CsOH could produce cesium salts of Ap as well as cause oxidation of Ap.

  5. Correlated Coulomb Drag in Capacitively Coupled Quantum-Dot Structures.

    Science.gov (United States)

    Kaasbjerg, Kristen; Jauho, Antti-Pekka

    2016-05-13

    We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs)-a bias-driven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach that accounts for higher-order tunneling (cotunneling) processes as well as energy-dependent lead couplings, and identify a mesoscopic Coulomb drag mechanism driven by nonlocal multielectron cotunneling processes. Our theory establishes the conditions for a nonzero drag as well as the direction of the drag current in terms of microscopic system parameters. Interestingly, the direction of the drag current is not determined by the drive current, but by an interplay between the energy-dependent lead couplings. Studying the drag mechanism in a graphene-based CQD heterostructure, we show that the predictions of our theory are consistent with recent experiments on Coulomb drag in CQD systems.

  6. Pushing indium phosphide quantum dot emission deeper into the near infrared

    Science.gov (United States)

    Saeboe, A. M.; Kays, J.; Mahler, A. H.; Dennis, A. M.

    2018-02-01

    Cadmium-free near infrared (NIR) emitting quantum dots (QDs) have significant potential for multiplexed tissue-depth imaging applications in the first optical tissue window (i.e., 650 - 900 nm). Indium phosphide (InP) chemistry provides one of the more promising cadmium-free options for biomedical imaging, but the full tunability of this material has not yet been achieved. Specifically, InP QD emission has been tuned from 480 - 730 nm in previous literature reports, but examples of samples emitting from 730 nm to the InP bulk bandgap limit of 925 nm are lacking. We hypothesize that by generating inverted structures comprising ZnSe/InP/ZnS in a core/shell/shell heterostructure, optical emission from the InP shell can be tuned by changing the InP shell thickness, including pushing deeper into the NIR than current InP QDs. Colloidal synthesis methods including hot injection precipitation of the ZnSe core and a modified successive ion layer adsorption and reaction (SILAR) method for stepwise shell deposition were used to promote growth of core/shell/shell materials with varying thicknesses of the InP shell. By controlling the number of injections of indium and phosphorous precursor material, the emission peak was tuned from 515 nm to 845 nm (2.41 - 1.47 eV) with consistent full width half maximum (FWHM) values of the emission peak 0.32 eV. To confer water solubility, the nanoparticles were encapsulated in PEGylated phospholipid micelles, and multiplexing of NIR-emitting InP QDs was demonstrated using an IVIS imaging system. These materials show potential for multiplexed imaging of targeted QD contrast agents in the first optical tissue window.

  7. Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

    Energy Technology Data Exchange (ETDEWEB)

    Kurtze, H.; Bayer, M. [Experimentelle Physik 2, TU Dortmund, D-44221 Dortmund (Germany)

    2016-07-04

    Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

  8. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

    Science.gov (United States)

    Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

    Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

  9. Exceeding Conventional Photovoltaic Efficiency Limits Using Colloidal Quantum Dots

    Science.gov (United States)

    Pach, Gregory F.

    Colloidal quantum dots (QDs) are a widely investigated field of research due to their highly tunable nature in which the optical and electronic properties of the nanocrystal can be manipulated by merely changing the nanocrystal's size. Specifically, colloidal quantum dot solar cells (QDSCs) have become a promising candidate for future generation photovoltaic technology. Quantum dots exhibit multiple exciton generation (MEG) in which multiple electron-hole pairs are generated from a single high-energy photon. This process is not observed in bulk-like semiconductors and allows for QDSCs to achieve theoretical efficiency limits above the standard single-junction Shockley-Queisser limit. However, the fast expanding field of QDSC research has lacked standardization of synthetic techniques and device design. Therefore, we sought to detail methodology for synthesizing PbS and PbSe QDs as well as photovoltaic device fabrication techniques as a fast track toward constructing high-performance solar cells. We show that these protocols lead toward consistently achieving efficiencies above 8% for PbS QDSCs. Using the same methodology for building single-junction photovoltaic devices, we incorporated PbS QDs as a bottom cell into a monolithic tandem architecture along with solution-processed CdTe nanocrystals. Modeling shows that near-peak tandem device efficiencies can be achieved across a wide range of bottom cell band gaps, and therefore the highly tunable band gap of lead-chalcogenide QDs lends well towards a bottom cell in a tandem architecture. A fully functioning monolithic tandem device is realized through the development of a ZnTe/ZnO recombination layer that appropriately combines the two subcells in series. Multiple recent reports have shown nanocrystalline heterostructures to undergo the MEG process more efficiency than several other nanostrucutres, namely lead-chalcogenide QDs. The final section of my thesis expands upon a recent publication by Zhang et. al., which

  10. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  11. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  12. Inorganic passivation and doping control in colloidal quantum dot photovoltaics

    KAUST Repository

    Hoogland, Sjoerd H.; Ip, Alex; Thon, Susanna; Voznyy, Oleksandr; Tang, Jiang; Liu, Huan; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

    2012-01-01

    We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.

  13. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  14. Carbon quantum dots and a method of making the same

    Science.gov (United States)

    Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

    2017-08-22

    The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

  15. Dicke states in multiple quantum dots

    Science.gov (United States)

    Sitek, Anna; Manolescu, Andrei

    2013-10-01

    We present a theoretical study of the collective optical effects which can occur in groups of three and four quantum dots. We define conditions for stable subradiant (dark) states, rapidly decaying super-radiant states, and spontaneous trapping of excitation. Each quantum dot is treated like a two-level system. The quantum dots are, however, realistic, meaning that they may have different transition energies and dipole moments. The dots interact via a short-range coupling which allows excitation transfer across the dots, but conserves the total population of the system. We calculate the time evolution of single-exciton and biexciton states using the Lindblad equation. In the steady state the individual populations of each dot may have permanent oscillations with frequencies given by the energy separation between the subradiant eigenstates.

  16. Bright infrared LEDs based on colloidal quantum-dots

    KAUST Repository

    Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

    2013-01-01

    Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.

  17. Double quantum dot as a minimal thermoelectric generator

    OpenAIRE

    Donsa, S.; Andergassen, S.; Held, K.

    2014-01-01

    Based on numerical renormalization group calculations, we demonstrate that experimentally realized double quantum dots constitute a minimal thermoelectric generator. In the Kondo regime, one quantum dot acts as an n-type and the other one as a p-type thermoelectric device. Properly connected the double quantum dot provides a miniature power supply utilizing the thermal energy of the environment.

  18. Coherence and dephasing in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan

    2003-01-01

    We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...

  19. Optical localization of quantum dots in tapered nanowires

    DEFF Research Database (Denmark)

    Østerkryger, Andreas Dyhl; Gregersen, Niels; Fons, Romain

    2017-01-01

    In this work we have measured the far-field emission patterns of In As quantum dots embedded in a GaAs tapered nanowire and used an open-geometry Fourier modal method for determining the radial position of the quantum dots by computing the far-field emission pattern for different quantum dot...

  20. Bilayer graphene quantum dot defined by topgates

    Energy Technology Data Exchange (ETDEWEB)

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  1. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

    Science.gov (United States)

    Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

    2011-10-01

    The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

  2. Enhancement of efficiency and stability of phosphorescent OLEDs based on heterostructured light-emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Chin, Byung Doo, E-mail: bdchin@dankook.ac.kr [Department of Polymer Science and Engineering and Center for Photofunctional Energy Materials, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2011-03-23

    The light-emitting efficiency and stability of a phosphorescent organic light-emitting device (OLED), whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping influenced by heterostructured emissive layers, are studied. The variation of the material combination of the heterostructured emitter, both for mixed and double layer configuration, affects the charge injection behaviour, luminous efficiency and stability. Both double and mixed emitter configurations yield low-voltage and high-efficiency behaviour (51 lm W{sup -1} at 1000 cd m{sup -2}; 30 lm W{sup -1} at 10 000 cd m{sup -2}). Such an improvement in power efficiency at elevated brightness is sufficiently universal, while the enhancement of device half-lifetime is rather sensitive to the circumstantial layout of heterostructural emitters. With an optimal mixture of hole-transport type and electron-transport type, a half-lifetime of more than 2500 h at 4000 cd m{sup -2} is obtained, which is 8 times the half-lifetime of control devices with a single emitter structure. The origin and criterion for enhancement of efficiency and lifetime are discussed in terms of the carrier transport behaviour with a specific device architecture.

  3. Eco-friendly intracellular biosynthesis of CdS quantum dots without changing Escherichia coli's antibiotic resistance.

    Science.gov (United States)

    Yan, Zheng-Yu; Du, Qing-Qing; Qian, Jing; Wan, Dong-Yu; Wu, Sheng-Mei

    2017-01-01

    In the paper, a green and efficient biosynthetical technique was reported for preparing cadmium sulfide (CdS) quantum dots, in which Escherichia coli (E. coli) was chosen as a biomatrix. Fluorescence emission spectra and fluorescent microscopic photographs revealed that as-produced CdS quantum dots had an optimum fluorescence emission peak located at 470nm and emitted a blue-green fluorescence under ultraviolet excitation. After extracted from bacterial cells and located the nanocrystals' foci in vivo, the CdS quantum dots showed a uniform size distribution by transmission electron microscope. Through the systematical investigation of the biosynthetic conditions, including culture medium replacement, input time point of cadmium source, working concentrations of raw inorganic ions, and co-cultured time spans of bacteria and metal ions in the bio-manufacture, the results revealed that CdS quantum dots with the strongest fluorescence emission were successfully prepared when E. coli cells were in stationary phase, with the replacement of culture medium and following the incubation with 1.0×10 -3 mol/L cadmium source for 2 days. Results of antimicrobial susceptibility testing indicated that the sensitivities to eight types of antibiotics of E. coli were barely changed before and after CdS quantum dots were prepared in the mild temperature environment, though a slight fall of antibiotic resistance could be observed, suggesting hinted the proposed technique of producing quantum dots is a promising environmentally low-risk protocol. Copyright © 2016 Elsevier Inc. All rights reserved.

  4. Optical studies of intersublevel-transitions in self-organized InGaAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Weber, A.

    2005-01-01

    In this thesis intersublevel-transitions in self-organized InGaAs/GaAs quantum dots are studied with spectroscopic methods. The charge-dependent absorption behaviour of the nanostructures in the intermediate infrared is studied by a new combination of Fourier spectroscopy and calorimetric absorption spectroscopy. Optical absorption in the quantum dots leads to a sample heating by charge-carrier relaxations, whereby non-radiative intersublevel transitions in the quantum dots are directly determined. The effects observed thereby are explained by different charge-carrier occupation, Pauli blocking, and many-=particle effects in the quantum dots. Furthermore intermediate-infrared emission from quantum dots is spectroscopically studied both under optical and electrical excitation. Each according to the structure of the waveguides in the samples emission peaks are shown, the intensity of which grows either sublinearly with the excitation power and finally saturates or exhibits a significantly superlinear growth. Simulations of an intermediate-infrared quantum-dot laser, which regard also the simultaneous intermediate-infrared emission, show that the observed superlinear growth is to be explained by intersublevel emission in the laser mode. The principal feasibility of a bipolar two-colour laser, which emits in the near- and in the intermediate infrared, is shown by this

  5. Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

    Science.gov (United States)

    Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

    2013-04-19

    The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

  6. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  7. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  8. Entangled photons from small quantum dots

    NARCIS (Netherlands)

    Visser, P.M.; Allaart, K.; Lenstra, D.

    2003-01-01

    We discuss level schemes of small quantum-dot turnstiles and their applicability in the production of entanglement in two-photon emission. Due to the large energy splitting of the single-electron levels, only one single-electron level and one single-hole level can be made resonant with the levels in

  9. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman M.

    2015-05-28

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

  10. Enabling biomedical research with designer quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Janczewski, D.; Dorokhin, D.V.; Han, M-Y; Vancso, Gyula J.; Navarro, Melba; Planell, Josep A.

    2012-01-01

    Quantum Dots (QDs) are a new class of semiconductor nanoparticulate luminophores, which are actively researched for novel applications in biology and nanomedicine. In this review, the recent progress in the design and applications of QD labels for in vitro and in vivo imaging of cells is presented.

  11. Detecting the chirality for coupled quantum dots

    International Nuclear Information System (INIS)

    Cao Huijuan; Hu Lian

    2008-01-01

    We propose a scheme to detect the chirality for a system consisting of three coupled quantum dots. The chirality is found to be determined by the frequency of the transition between chiral states under the chiral symmetry broken perturbation. The results are important to construct quantum gates and to demonstrate chiral entangle states in the triangle spin dots

  12. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... Effect of temperature on InxGa1−xAs/GaAs quantum dots. MAHDI AHMADI BORJI1, ALI ... Attention should be given to the effects of temperature, ... tion 2 explains the model and method of the numerical simulation. Our results ...

  13. Decoherence in Nearly-Isolated Quantum Dots

    DEFF Research Database (Denmark)

    Folk, J.; M. Marcus, C.; Harris jr, J.

    2000-01-01

    Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single...

  14. Metamorphic quantum dots: Quite different nanostructures

    International Nuclear Information System (INIS)

    Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

    2010-01-01

    In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

  15. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  16. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...

  18. Integrated photonics using colloidal quantum dots

    Science.gov (United States)

    Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

    2009-11-01

    Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

  19. Exciton in vertically coupled type II quantum dots in threading magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Cantillo, J., E-mail: jhofry@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Carrera 32 No 22-08, Santa Marta (Colombia); Universidad de la Guajira, Riohacha (Colombia); Escorcia-Salas, G. Elizabeth, E-mail: elizabethescorcia@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Carrera 32 No 22-08, Santa Marta (Colombia); Mikhailov, I.D., E-mail: mikhail2811@gmail.com [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia); Sierra-Ortega, J., E-mail: jsierraortega@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Carrera 32 No 22-08, Santa Marta (Colombia)

    2014-11-15

    We analyze the energy spectrum of a neutral exciton confined in a semiconductor heterostructure formed by two vertically coupled axially symmetrical type II quantum dots located close to each other. The electron in the structure is mainly located inside dots tunneling between them while the hole generally is placed in the exterior region close to the symmetry axis. Solutions of the Schrödinger equation are obtained by a variational separation of variables in the adiabatic limit. Numerical results are presented for the energies of bonding and anti-bonding lowest-lying of the exciton states and for the density of states for different InP/GaInP quantum dots' morphologies and the magnetic field strength values.

  20. Influence of the quantum dot geometry on p -shell transitions in differently charged quantum dots

    Science.gov (United States)

    Holtkemper, M.; Reiter, D. E.; Kuhn, T.

    2018-02-01

    Absorption spectra of neutral, negatively, and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p -shell transitions, including the influence of nearby nominally dark states. Based on the envelope function approximation, we treat the four-band Luttinger theory as well as the direct and short-range exchange Coulomb interactions within a configuration interaction approach. The quantum dot confinement is approximated by an anisotropic harmonic potential. We present a detailed investigation of state mixing and correlations mediated by the individual interactions. Differences and similarities between the differently charged quantum dots are highlighted. Especially large differences between negatively and positively charged quantum dots become evident. We present a visualization of energetic shifts and state mixtures due to changes in size, in-plane asymmetry, and aspect ratio. Thereby we provide a better understanding of the experimentally hard to access question of quantum dot geometry effects. Our findings show a method to determine the in-plane asymmetry from photoluminescence excitation spectra. Furthermore, we supply basic knowledge for tailoring the strength of certain state mixtures or the energetic order of particular excited states via changes of the shape of the quantum dot. Such knowledge builds the basis to find the optimal QD geometry for possible applications and experiments using excited states.

  1. Optical properties of quantum-dot-doped liquid scintillators

    International Nuclear Information System (INIS)

    Aberle, C; Winslow, L; Li, J J; Weiss, S

    2013-01-01

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO

  2. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  3. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

    Science.gov (United States)

    Haffouz, Sofiane; Zeuner, Katharina D; Dalacu, Dan; Poole, Philip J; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D; Zwiller, Valery; Williams, Robin L

    2018-05-09

    We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

  4. Quantum dot-polymer conjugates for stable luminescent displays.

    Science.gov (United States)

    Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

    2018-05-23

    The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

  5. Magneto-exciton dephasing in a single quantum dot

    Science.gov (United States)

    Rodriguez, F. J.; Reyes, A.; Olaya-Castro, A.; Quiroga, L.

    2001-03-01

    Ultrafast spectroscopy experiments on single quantum dot (SQD) in magnetic fields provide a variety of unexpected results, one of them being the recently reported entanglement of exciton states. In order to explore the entanglement robustness, dephasing mechanisms must be considered. By calculating the non-linear time resolved optical spectrum of a SQD, we present a theoretical study on the exciton-exciton scattering contribution to the magneto-exciton dephasing time. Our results show that the time evolution of \\chi^(3) presents, under non-steady-state condition, a beating between the bound biexciton and the first unbound biexciton state in the strong confinement regime. The contribution coming from both left and right polarized emitted photons allows us to predict the creation of exciton entanglement, in agreement with recent experimental results. Previous theoretical works have only addressed the stationary optical response. By contrast, our results based on a full time dependent calculation show new features specially for the fast dephasing case.

  6. Quantum Dots in Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Sollner, Immo Nathanael

    This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...... with numerical simulations. Such a high coupling eciency implies that the system can be considered an articial 1D-atom, and we theoretically show that this system can generate strong photon-photon interaction, which is an essential functionality for deterministic optical quantum information processing. We...

  7. Conductance Peaks in Open Quantum Dots

    International Nuclear Information System (INIS)

    Ramos, J. G. G. S.; Bazeia, D.; Hussein, M. S.; Lewenkopf, C. H.

    2011-01-01

    We present a simple measure of the conductance fluctuations in open ballistic chaotic quantum dots, extending the number of maxima method originally proposed for the statistical analysis of compound nuclear reactions. The average number of extreme points (maxima and minima) in the dimensionless conductance T as a function of an arbitrary external parameter Z is directly related to the autocorrelation function of T(Z). The parameter Z can be associated with an applied gate voltage causing shape deformation in quantum dot, an external magnetic field, the Fermi energy, etc. The average density of maxima is found to be Z >=α Z /Z c , where α Z is a universal constant and Z c is the conductance autocorrelation length, which is system specific. The analysis of Z > does not require large statistic samples, providing a quite amenable way to access information about parametric correlations, such as Z c .

  8. Quantum features of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Lozada-Cassou, M.; Dong Shihai; Yu Jiang

    2004-01-01

    The exact solutions of the two-dimensional Schrodinger equation with the position-dependent mass for the square well potential in the semiconductor quantum dots system are obtained. The eigenvalues, which are closely related to the position-dependent masses μ1 and μ2, the potential well depth V0 and the radius of the quantum dots r0, can be calculated from two boundary conditions. We generalize this quantum system to three-dimensional case. The special cases for the angular momentum quantum number l=0, 1, 2 are studied in some detail. We find that the energy levels are proportional to the parameters μ2, V0 and r0 for l=0. The relations between them for l=1, 2 become very complicated. The scattering states of this quantum system are mentioned briefly

  9. Spectroscopy of Charged Quantum Dot Molecules

    Science.gov (United States)

    Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

    2006-03-01

    Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

  10. Theory of Charged Quantum Dot Molecules

    Science.gov (United States)

    Ponomarev, I. V.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Ware, M. E.; Gammon, D.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Recent optical spectroscopy of excitonic molecules in coupled quantum dots (CQDs) tuned by electric field reveal a richer diversity in spectral line patterns than in their single quantum dot counterparts. We developed a theoretical model that allows us to classify energies and intensities of various PL transitions. In this approach the electric field induced resonance tunneling of the electron and hole states occurs at different biases due to the inherent asymmetry of CQDs. The truncated many-body basis configurations for each molecule are constructed from antisymmetrized products of single-particle states, where the electron occupies only one ground state level in single QD and the hole can occupy two lowest levels of CQD system. The Coulomb interaction between particles is treated with perturbation theory. As a result the observed PL spectral lines can be described with a small number of parameters. The theoretical predictions account well for recent experiments.

  11. Quantum Dot Devices for Optical Signal Processing

    DEFF Research Database (Denmark)

    Chen, Yaohui

    and the continuum. Additional to the conventional time-domain modeling scheme, a small-signal perturbation analysis has been used to assist the investigation of harmonic modulation properties. The static properties of quantum dot devices, for example high saturation power, have been quantitatively analyzed....... Additional to the static linear amplication properties, we focus on exploring the gain dynamics on the time scale ranging from sub-picosecond to nanosecond. In terms of optical signals that have been investigated, one is the simple sinusoidally modulated optical carrier with a typical modulation frequency....... We also investigate the gain dynamics in the presence of pulsed signals, in particular the steady gain response to a periodic pulse trains with various time periods. Additional to the analysis of high speed patterning free amplication up to 150-200 Gb/s in quantum dot semiconductor optical ampliers...

  12. Magnetic control of dipolaritons in quantum dots

    International Nuclear Information System (INIS)

    Rojas-Arias, J S; Vinck-Posada, H; Rodríguez, B A

    2016-01-01

    Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure. (paper)

  13. Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot-quantum well structures emitting at telecom spectral range

    Science.gov (United States)

    Rudno-Rudziński, W.; Biegańska, D.; Misiewicz, J.; Lelarge, F.; Rousseau, B.; Sek, G.

    2018-01-01

    We investigate the diffusion of photo-generated carriers (excitons) in hybrid two dimensional-zero dimensional tunnel injection structures, based on strongly elongated InAs quantum dots (called quantum dashes, QDashes) of various heights, designed for emission at around 1.5 μm, separated by a 3.5 nm wide barrier from an 8 nm wide In0.64Ga0.36As0.78P0.22 quantum well (QW). By measuring the spectrally filtered real space images of the photoluminescence patterns with high resolution, we probe the spatial extent of the emission from QDashes. Deconvolution with the exciting light spot shape allows us to extract the carrier/exciton diffusion lengths. For the non-resonant excitation case, the diffusion length depends strongly on excitation power, pointing at carrier interactions and phonons as its main driving mechanisms. For the case of excitation resonant with absorption in the adjacent QW, the diffusion length does not depend on excitation power for low excitation levels since the generated carriers do not have sufficient excess kinetic energy. It is also found that the diffusion length depends on the quantum-mechanical coupling strength between QW and QDashes, controlled by changing the dash size. It influences the energy difference between the QDash ground state of the system and the quantum well levels, which affects the tunneling rates. When that QW-QDash level separation decreases, the probability of capturing excitons generated in the QW by QDashes increases, which is reflected by the decreased diffusion length from approx. 5 down to 3 μm.

  14. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia; Adinolfi, Valerio; Sun, Jon Paul; Del Gobbo, Silvano; Voznyy, Oleksandr; Kramer, Illan J.; Hill, Ian G.; Sargent, Edward H.

    2015-01-01

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Biomedical application of carbon quantum dots

    International Nuclear Information System (INIS)

    Markovic, Z.

    2017-01-01

    In this presentation we will summarize and discuss the possibilities of application of carbon quantum dots (CQD) as agents for PDT. Considering their biocompatibility, photostability and optical properties, CQD seem to be good candidates as a photosensitizer. This lecture critically compares and discusses current state-of the-art use of CQD in PDT. We will analyze structural, morphological and optical properties of these nanomaterials as well as the mechanisms responsible for their photosensition and ROS production. (authors)

  16. Quantum Dots for Molecular Diagnostics of Tumors

    OpenAIRE

    Zdobnova, T.A.; Lebedenko, E.N.; Deyev, S.М.

    2011-01-01

    Semiconductor quantum dots (QDs) are a new class of fluorophores with unique physical and chemical properties, which allow to appreciably expand the possibilities for the current methods of fluorescent imaging and optical diagnostics. Here we discuss the prospects of QD application for molecular diagnostics of tumors ranging from cancer-specific marker detection on microplates to non-invasive tumor imaging in vivo. We also point out the essential problems that require resolution in order to c...

  17. Silicon based quantum dot hybrid qubits

    Science.gov (United States)

    Kim, Dohun

    2015-03-01

    The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories

  18. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia

    2015-10-13

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    LI Zhi-min

    2017-08-01

    Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.

  1. Quantum Dots and Their Multimodal Applications: A Review

    Directory of Open Access Journals (Sweden)

    Paul H. Holloway

    2010-03-01

    Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

  2. The quantum Hall effect in quantum dot systems

    International Nuclear Information System (INIS)

    Beltukov, Y M; Greshnov, A A

    2014-01-01

    It is proposed to use quantum dots in order to increase the temperatures suitable for observation of the integer quantum Hall effect. A simple estimation using Fock-Darwin spectrum of a quantum dot shows that good part of carriers localized in quantum dots generate the intervals of plateaus robust against elevated temperatures. Numerical calculations employing local trigonometric basis and highly efficient kernel polynomial method adopted for computing the Hall conductivity reveal that quantum dots may enhance peak temperature for the effect by an order of magnitude, possibly above 77 K. Requirements to potentials, quality and arrangement of the quantum dots essential for practical realization of such enhancement are indicated. Comparison of our theoretical results with the quantum Hall measurements in InAs quantum dot systems from two experimental groups is also given

  3. Using of Quantum Dots in Biology and Medicine.

    Science.gov (United States)

    Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

    2018-01-01

    Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

  4. Principles of conjugating quantum dots to proteins via carbodiimide chemistry

    International Nuclear Information System (INIS)

    Song Fayi; Chan, Warren C W

    2011-01-01

    The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein–quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.

  5. Theory of the Quantum Dot Hybrid Qubit

    Science.gov (United States)

    Friesen, Mark

    2015-03-01

    The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.

  6. Quantum Dots for Solar Cell Application

    Science.gov (United States)

    Poudyal, Uma

    Solar energy has been anticipated as the most important and reliable source of renewable energy to address the ever-increasing energy demand. To harvest solar energy efficiently, diverse kinds of solar cells have been studied. Among these, quantum dot sensitized solar cells have been an interesting group of solar cells mainly due to tunable, size-dependent electronic and optical properties of quantum dots. Moreover, doping these quantum dots with transition metal elements such as Mn opens avenue for improved performance of solar cells as well as for spin based technologies. In this dissertation, Mn-doped CdSe QDs (Mn-CdSe) have been synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method. They are used in solar cells to study the effect of Mn doping in the performance of solar cells. Incident photon to current-conversion efficiency (IPCE) is used to record the effect of Mn-doping. Intensity modulated photovoltage and photocurrent spectroscopy (IMVS/PS) has been used to study the carrier dynamics in these solar cells. Additionally, the magnetic properties of Mn-CdSe QDs is studied and its possible origin is discussed. Moreover, CdS/CdSe QDs have been used to study the effect of liquid, gel and solid electrolyte in the performance and stability of the solar cells. Using IPCE spectra, the time decay measurements are presented and the possible reactions between the QD and the electrolytes are explained.

  7. Ultrafast Gain Dynamics in Quantum Dot Amplifiers: Theoretical Analysis and Experimental Investigations

    DEFF Research Database (Denmark)

    Poel, Mike van der; Gehrig, Edeltraud; Hess, Ortwin

    2005-01-01

    Ultrafast gain dynamics in an optical amplifier with an active layer of self-organized quantum dots (QDs) emitting near 1.3$muhbox m$is characterized experimentally in a pump-probe experiment and modeled theoretically on the basis of QD Maxwell–Bloch equations. Experiment and theory are in good......$factor) is theoretically predicted and demonstrated in the experiments. The fundamental analysis reveals the underlying physical processes and indicates limitations to QD-based devices....

  8. In situ electron-beam polymerization stabilized quantum dot micelles.

    Science.gov (United States)

    Travert-Branger, Nathalie; Dubois, Fabien; Renault, Jean-Philippe; Pin, Serge; Mahler, Benoit; Gravel, Edmond; Dubertret, Benoit; Doris, Eric

    2011-04-19

    A polymerizable amphiphile polymer containing PEG was synthesized and used to encapsulate quantum dots in micelles. The quantum dot micelles were then polymerized using a "clean" electron beam process that did not require any post-irradiation purification. Fluorescence spectroscopy revealed that the polymerized micelles provided an organic coating that preserved the quantum dot fluorescence better than nonpolymerized micelles, even under harsh conditions. © 2011 American Chemical Society

  9. Spin fine structure of optically excited quantum dot molecules

    Science.gov (United States)

    Scheibner, M.; Doty, M. F.; Ponomarev, I. V.; Bracker, A. S.; Stinaff, E. A.; Korenev, V. L.; Reinecke, T. L.; Gammon, D.

    2007-06-01

    The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin-exchange interactions, Pauli exclusion, and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals but also spins.

  10. Numerical simulation of electronic properties of coupled quantum dots on wetting layers

    International Nuclear Information System (INIS)

    Betcke, M M; Voss, H

    2008-01-01

    Self-assembled quantum dots are grown on wetting layers and frequently in an array-like assembly of many similar but not exactly equal dots. Nevertheless, most simulations disregard these structural conditions and restrict themselves to simulating a pure single quantum dot. For reasons of numerical efficiency we advocate the effective one-band Hamiltonian with energy- and position-dependent effective mass approximation and a finite height hard-wall 3D confinement potential for computation of the energy levels of the electrons in the conduction band. Within this model we investigate the geometrical effects mentioned above on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix. We find that the presence of a wetting layer may affect the electronic structure noticeably. Furthermore, we establish that, in spite of the large bandgap of the InAs/GaAs heterostructure, if the dots in a vertically aligned array are sufficiently close stacked there is considerable interaction between their eigenfunctions. Moreover, the eigenfunctions of such an array are quite sensitive to certain structural perturbations

  11. Using a quantum dot system to realize perfect state transfer

    International Nuclear Information System (INIS)

    Li Ji; Wu Shi-Hai; Zhang Wen-Wen; Xi Xiao-Qiang

    2011-01-01

    There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M, Petrosyan D and Lambropoulos P 2004 Europhys. Lett. 65 297] where a quantum dot system is used to realize quantum communication. To overcome these disadvantages, we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST). First, we calculate the interaction relation for PQST in the spin chain. Second, we review the interaction between the quantum dots in the Heitler—London approach. Third, we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST. (general)

  12. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    International Nuclear Information System (INIS)

    See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

    2015-01-01

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure

  13. Correlation effects in side-coupled quantum dots

    International Nuclear Information System (INIS)

    Zitko, R; Bonca, J

    2007-01-01

    Using Wilson's numerical renormalization group (NRG) technique, we compute zero-bias conductance and various correlation functions of a double quantum dot (DQD) system. We present different regimes within a phase diagram of the DQD system. By introducing a negative Hubbard U on one of the quantum dots, we simulate the effect of electron-phonon coupling and explore the properties of the coexisting spin and charge Kondo state. In a triple quantum dot (TQD) system, a multi-stage Kondo effect appears where localized moments on quantum dots are screened successively at exponentially distinct Kondo temperatures

  14. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  15. Application of Inkjet Printing in High-Density Pixelated RGB Quantum Dot-Hybrid LEDs

    KAUST Repository

    Haverinen, Hanna

    2012-05-23

    Recently, an intriguing solution to obtain better color purity has been to introduce inorganic emissive quantum dots (QDs) into an otherwise OLED structure. The emphasis of this chapter is to present a simple discussion of the first attempts to fabricate high-density, pixelated (quarter video graphics array (QVGA) format), monochromatic and RGB quantum dots light-emitting diodes (QDLEDs), where inkjet printing is used to deposit the light-emitting layer of QDs. It shows some of the factors that have to be considered in order to achieve the desired accuracy and printing quality. The successful operation of the RGB printed devices indicates the potential of the inkjet printing approach in the fabrication of full-color QDLEDs for display application. However, further optimization of print quality is still needed in order to eliminate the formation of pinholes, thus maximizing energy transfer from organic layers to the QDs and in turn increasing the performance of the devices. Controlled Vocabulary Terms: ink jet printing; LED displays; LED lamps; organic light emitting diodes; quantum dots

  16. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ∼1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200 MHz.

  17. Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

    International Nuclear Information System (INIS)

    Kalden, J; Sebald, K; Gutowski, J; Tessarek, C; Figge, S; Kruse, C; Hommel, D

    2010-01-01

    We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.

  18. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  19. Coherent transport through interacting quantum dots

    International Nuclear Information System (INIS)

    Hiltscher, Bastian

    2012-01-01

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  20. Coherent transport through interacting quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hiltscher, Bastian

    2012-10-05

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  1. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

    Science.gov (United States)

    Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

    2012-02-07

    Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

  2. Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

    Science.gov (United States)

    Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

    2018-02-01

    In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

  3. Realization of electrically tunable single quantum dot nanocavities

    Energy Technology Data Exchange (ETDEWEB)

    Hofbauer, Felix Florian Georg

    2009-03-15

    We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

  4. Single, double, and triple quantum dots in the transport; Einzel-, Doppel- und Dreifachquantenpunkte im Transport

    Energy Technology Data Exchange (ETDEWEB)

    Rogge, Maximilian Christoph

    2008-12-03

    This thesis describes the fabrication of different lateral single, double and triple quantum dots as well as the investigation of these devices with electronic transport. Based on GaAs/AlGaAs heterostructures, the fabrication was carried out using optical lithography and lithography with a scanning electron microscope and an atomic force microscope. The latter ones were also used in combination. Aside from basic effects like Coulomb blockade the analysis of single quantum dots particularly yielded results by charge detection and magneto transport. With charge detection using quantum point contacts conclusions were attained concerning tunneling rates and the extension of wave functions. In a magnetic field the influence of the electronic spin is important aside from aspects concerning the Fock-Darwin spectrum. Analyses were performed on Zeeman effect, spin pairing, spin blockade and Kondo effect. The combination of spin blockade and Kondo effect allows statements concerning the spin configuration, which depends on the electron number. With double quantum dots of different geometries the two mechanisms of capacitive coupling and tunnel coupling were analyzed. They were found in spectra of ground and excited states. With gate voltage and magnetic field it was possible to freely vary character and strength of coupling. With capacitive coupling, spin blockade was investigated again. The analysis of coupling effects was performed using transport and charge measurements. Aside from results on tunneling rates the latter one allows to detect molecular states. Concerning triple quantum dots the three dimensional stability diagram was analyzed. The free variation of energies of all three dots was achieved. The evolution of resonances was observed with transport and charge detection. With a starlike device geometry it was possible to perform two-path measurements. They provide a new measurand, the distinguishability of double and triple dot physics. (orig.)

  5. Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot

    International Nuclear Information System (INIS)

    Khanin, Yu. N.; Vdovin, E. E.; Eaves, L.; Larkin, I. A.; Patane, A.; Makarovskii, O. N.; Henini, M.

    2007-01-01

    The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter

  6. Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

    Science.gov (United States)

    Lüker, S.; Kuhn, T.; Reiter, D. E.

    2017-12-01

    Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

  7. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex

    2012-07-29

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  8. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

    2012-01-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  9. Interband emission energy in a dilute nitride quaternary semiconductor quantum dot for longer wavelength applications

    Science.gov (United States)

    Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.

    2016-07-01

    Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.

  10. Exciton binding energy in a pyramidal quantum dot

    Indian Academy of Sciences (India)

    A ANITHA

    2018-03-27

    Mar 27, 2018 ... screening function on exciton binding energy in a pyramid-shaped quantum dot of ... tures may generate unique properties and they show .... where Ee is the ground-state energy of the electron in ... Figure 1. The geometry of the pyramidal quantum dot. base and H is the height of the pyramid which is taken.

  11. Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg

    deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...

  12. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  13. Four-Wave Mixing Spectroscopy of Quantum Dot Molecules

    Science.gov (United States)

    Sitek, A.; Machnikowski, P.

    2007-08-01

    We study theoretically the nonlinear four-wave mixing response of an ensemble of coupled pairs of quantum dots (quantum dot molecules). We discuss the shape of the echo signal depending on the parameters of the ensemble: the statistics of transition energies and the degree of size correlations between the dots forming the molecules.

  14. Stark effect and polarizability of graphene quantum dots

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

  15. Laterally coupled jellium-like two-dimensional quantum dots

    NARCIS (Netherlands)

    Markvoort, Albert. J.; Hilbers, P.A.J.; Pino, R.

    2003-01-01

    Many studies have been performed to describe quantum dots using a parabolic confining potential. However, infinite potentials are unphysical and lead to problems when describing laterally coupled quantum dots. We propose the use of the parabolic potential of a homogeneous density distribution within

  16. Fast synthesize ZnO quantum dots via ultrasonic method.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Fractional decay of quantum dots in photonic crystals

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Koenderink, Femius; Lodahl, Peter

    2008-01-01

    We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses.......We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses....

  18. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

  19. Polarized electrons, trions, and nuclei in charged quantum dots

    Science.gov (United States)

    Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

    2003-07-01

    We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

  20. Electronic properties of assemblies of zno quantum dots

    NARCIS (Netherlands)

    Roest, Aarnoud Laurens

    2003-01-01

    Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling

  1. Phonon-assisted decoherence and tunneling in quantum dot molecules

    DEFF Research Database (Denmark)

    Grodecka-Grad, Anna; Foerstner, Jens

    2011-01-01

    processes with relevant acoustic phonons. We show that the relaxation is dominated by phonon-assisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between...

  2. Optical properties of a tip-induced quantum dot

    NARCIS (Netherlands)

    Kemerink, M.; Sauthoff, K.; Koenraad, P.M.; Gerritsen, J.W.; Kempen, van H.; Fomin, V.M.; Wolter, J.H.; Devreese, J.T.; Miura, N.; Ando, T.

    2001-01-01

    We have performed optical spectroscopy measurements on an STM-tip-induced quantum dot. The dominant confinement in the (hole) quantum dot is in the direction parallel to the tip axis. Electron confinement is achieved by a sub-surface AlGaAs barrier. Current dependent measurements indicate that

  3. Electroluminescence spectra of an STM-tip-induced quantum dot

    NARCIS (Netherlands)

    Croitoru, M.D.; Gladilin, V.N.; Fomin, V.; Devreese, J.T.; Kemerink, M.; Koenraad, P.M.; Sauthoff, K.; Wolter, J.H.; Long, A.R.; Davies, J.H.

    2003-01-01

    We analyse the electroluminescence measurements performed on a STM-tipImduced quantum dot in a GaAs layer. Positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the electron tunnelling current even in the case when the current

  4. Correlation effects in superconducting quantum dot systems

    Science.gov (United States)

    Pokorný, Vladislav; Žonda, Martin

    2018-05-01

    We study the effect of electron correlations on a system consisting of a single-level quantum dot with local Coulomb interaction attached to two superconducting leads. We use the single-impurity Anderson model with BCS superconducting baths to study the interplay between the proximity induced electron pairing and the local Coulomb interaction. We show how to solve the model using the continuous-time hybridization-expansion quantum Monte Carlo method. The results obtained for experimentally relevant parameters are compared with results of self-consistent second order perturbation theory as well as with the numerical renormalization group method.

  5. Quantum dot loaded immunomicelles for tumor imaging

    Directory of Open Access Journals (Sweden)

    Levchenko Tatyana

    2010-10-01

    Full Text Available Abstract Background Optical imaging is a promising method for the detection of tumors in animals, with speed and minimal invasiveness. We have previously developed a lipid coated quantum dot system that doubles the fluorescence of PEG-grafted quantum dots at half the dose. Here, we describe a tumor-targeted near infrared imaging agent composed of cancer-specific monoclonal anti-nucleosome antibody 2C5, coupled to quantum dot (QD-containing polymeric micelles, prepared from a polyethylene glycol/phosphatidylethanolamine (PEG-PE conjugate. Its production is simple and involves no special equipment. Its imaging potential is great since the fluorescence intensity in the tumor is twofold that of non-targeted QD-loaded PEG-PE micelles at one hour after injection. Methods Para-nitrophenol-containing (5% PEG-PE quantum dot micelles were produced by the thin layer method. Following hydration, 2C5 antibody was attached to the PEG-PE micelles and the QD-micelles were purified using dialysis. 4T1 breast tumors were inoculated subcutaneously in the flank of the animals. A lung pseudometastatic B16F10 melanoma model was developed using tail vein injection. The contrast agents were injected via the tail vein and mice were depilated, anesthetized and imaged on a Kodak Image Station. Images were taken at one, two, and four hours and analyzed using a methodology that produces normalized signal-to-noise data. This allowed for the comparison between different subjects and time points. For the pseudometastatic model, lungs were removed and imaged ex vivo at one and twenty four hours. Results The contrast agent signal intensity at the tumor was double that of the passively targeted QD-micelles with equally fast and sharply contrasted images. With the side views of the animals only tumor is visible, while in the dorsal view internal organs including liver and kidney are visible. Ex vivo results demonstrated that the agent detects melanoma nodes in a lung

  6. Quantum Dots for Molecular Diagnostics of Tumors

    Science.gov (United States)

    Zdobnova, T.A.; Lebedenko, E.N.; Deyev, S.М.

    2011-01-01

    Semiconductor quantum dots (QDs) are a new class of fluorophores with unique physical and chemical properties, which allow to appreciably expand the possibilities for the current methods of fluorescent imaging and optical diagnostics. Here we discuss the prospects of QD application for molecular diagnostics of tumors ranging from cancer-specific marker detection on microplates to non-invasive tumor imagingin vivo. We also point out the essential problems that require resolution in order to clinically promote QD, and we indicate innovative approaches to oncology which are implementable using QD. PMID:22649672

  7. Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

    Science.gov (United States)

    Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

    2013-05-01

    We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

  8. Near-field strong coupling of single quantum dots.

    Science.gov (United States)

    Groß, Heiko; Hamm, Joachim M; Tufarelli, Tommaso; Hess, Ortwin; Hecht, Bert

    2018-03-01

    Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.

  9. Numerical simulation of optical feedback on a quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Al-Khursan, Amin H., E-mail: ameen_2all@yahoo.com [Thi-Qar University, Nassiriya Nanotechnology Research Laboratory (NNRL), Science College (Iraq); Ghalib, Basim Abdullattif [Babylon University, Laser Physics Department, Science College for Women (Iraq); Al-Obaidi, Sabri J. [Al-Mustansiriyah University, Physics Department, Science College (Iraq)

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  10. Electric and Magnetic Interaction between Quantum Dots and Light

    DEFF Research Database (Denmark)

    Tighineanu, Petru

    argue that there is ample room for improving the oscillator strength with prospects for approaching the ultra-strong-coupling regime of cavity quantum electrodynamics with optical photons. These outstanding gures of merit render interface-uctuation quantum dots excellent candidates for use in cavity...... quantum electrodynamics and quantum-information science. We investigate exciton localization in droplet-epitaxy quantum dots by conducting spectral and time-resolved measurements. We nd small excitons despite the large physical size of dropletepitaxy quantum dots, which is attributed to material inter......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...

  11. 3D super-resolution imaging with blinking quantum dots

    Science.gov (United States)

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

    2013-01-01

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

  12. Enhanced intratumoral uptake of quantum dots concealed within hydrogel nanoparticles

    International Nuclear Information System (INIS)

    Nair, Ashwin; Shen Jinhui; Thevenot, Paul; Zou Ling; Tang Liping; Cai Tong; Hu Zhibing

    2008-01-01

    Effective nanomedical devices for tumor imaging and drug delivery are not yet available. In an attempt to construct a more functional device for tumor imaging, we have embedded quantum dots (which have poor circulatory behavior) within hydrogel nanoparticles made of poly-N-isopropylacrylamide. We found that the hydrogel encapsulated quantum dots are more readily taken up by cultured tumor cells. Furthermore, in a melanoma model, hydrogel encapsulated quantum dots also preferentially accumulate in the tumor tissue compared with normal tissue and have ∼16-fold greater intratumoral uptake compared to non-derivatized quantum dots. Our results suggest that these derivatized quantum dots, which have greatly improved tumor localization, may enhance cancer monitoring and chemotherapy.

  13. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  14. Non-blinking quantum dot with a plasmonic nanoshell resonator

    Science.gov (United States)

    Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

    2015-02-01

    Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

  15. Quantum dot systems: artificial atoms with tunable properties

    International Nuclear Information System (INIS)

    Weis, J.

    2005-01-01

    Full text: Quantum dots - also called zero-dimensional electron systems or artificial atoms - are physical objects where the constituent electrons are confined in a small spatial region, leading to discrete eigenvalues for the energies of the confined electrons. Large quantum dots offer a dense energy spectrum comparable to that of metallic grains, whereas small quantum dots more closely resemble atoms in their electronic properties. Quantum dots can be linked to leads by tunnel barriers, hence permitting electrical transport measurements: Coulomb blockade and single-electron charging effects are observed due to the repulsive electron electron interaction on the quantum dot site. Usually fabricated by conventional semiconductor growth and processing technology, the advantage is that both simple and also more complex quantum dot systems can be designed to purpose, acting as model systems with in-situ tunable parameters such as the number of confined electrons in the quantum dot and the strength of the tunnel coupling to the leads, electrostatically controlled by the applied voltages to gate electrodes. With increasing the tunnel coupling to the leads, the virtual occupation of the quantum dot from the leads becomes more and more important -- the simple description of electrical transport by single-electron tunneling events breaks down. The basic physics is described by the Kondo physics based on the Anderson impurity model. A system consisting of strongly electrostatically coupled quantum dots with separate leads to each quantum dot represent another realization of the Anderson impurity model. Experiments to verify the analogy are presented. The experimental data embedded within this tutorial have been obtained with Alexander Huebel, Matthias Keller, Joerg Schmid, David Quirion, Armin Welker, Ulf Wilhelm, and Klaus von Klitzing. (author)

  16. Growth and characterization of InP/In0.48Ga0.52P quantum dots optimized for single-photon emission

    International Nuclear Information System (INIS)

    Ugur, Asli

    2012-01-01

    In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on In 0.48 Ga 0.52 P, lattice matched to GaAs. Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm 2 is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitonic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g (2) (0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized In 0.48 Ga 0.52 P surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the In 0.48 Ga 0.52 P matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

  17. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    CERN Document Server

    Vdovin, V I; Rzaev, M M; Burbaev, T M

    2002-01-01

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  18. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  19. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  20. Fourier transform spectra of quantum dots

    Science.gov (United States)

    Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

    2010-05-01

    Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

  1. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.

    2011-11-22

    Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.

  2. Materials challenges for devices based on single, self-assembled InGaN quantum dots

    International Nuclear Information System (INIS)

    Oliver, Rachel A; Jarjour, Anas F; Tahraoui, Abbes; Kappers, Menno J; Taylor, Robert A; Humphreys, Colin J

    2007-01-01

    Builiding on earlier studies of single InGaN quantum dots (QDs), we are considering their potential for use in blue- and green-emitting single photon sources. Envisaging a device based on a resonant cavity light emitting diode, we have studied the effect of growing QDs on an underlying AlN/GaN distributed Bragg reflector, and have shown that enhanced single QD emission may be obtained. Additionally, we have studied the effect of the growth and activation of a p-type cap on an underlying QD layer and have shown that the QDs survive the anneal process

  3. The effect of near laterally and vertically neighboring quantum dots on the composition of uncapped InxGa1−xAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Donglin, Wang; Zhongyuan, Yu; Yumin, Liu; Han, Ye; Pengfei, Lu; Xiaotao, Guo; Long, Zhao; Xia, Xin

    2010-01-01

    The composition of quantum dots has a direct effect on the optical and electronic properties of quantum-dot-based devices. In this paper, we combine the method of moving asymptotes and finite element tools to compute the composition distribution by minimizing the Gibbs free energy of quantum dots, and use this method to study the effect of near laterally and vertically neighboring quantum dots on the composition distribution. The simulation results indicate that the effect from the laterally neighboring quantum dot is very small, and the vertically neighboring quantum dot can significantly influence the composition by the coupled strain field

  4. Ordered quantum-ring chains grown on a quantum-dot superlattice template

    International Nuclear Information System (INIS)

    Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

    2012-01-01

    One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

  5. Nanodiamonds and silicon quantum dots: ultrastable and biocompatible luminescent nanoprobes for long-term bioimaging.

    Science.gov (United States)

    Montalti, M; Cantelli, A; Battistelli, G

    2015-07-21

    Fluorescence bioimaging is a powerful, versatile, method for investigating, both in vivo and in vitro, the complex structures and functions of living organisms in real time and space, also using super-resolution techniques. Being poorly invasive, fluorescence bioimaging is suitable for long-term observation of biological processes. Long-term detection is partially prevented by photobleaching of organic fluorescent probes. Semiconductor quantum dots, in contrast, are ultrastable, fluorescent contrast agents detectable even at the single nanoparticle level. Emission color of quantum dots is size dependent and nanoprobes emitting in the near infrared (NIR) region are ideal for low back-ground in vivo imaging. Biocompatibility of nanoparticles, containing toxic elements, is debated. Recent safety concerns enforced the search for alternative ultrastable luminescent nanoprobes. Most recent results demonstrated that optimized silicon quantum dots (Si QDs) and fluorescent nanodiamonds (FNDs) show almost no photobleaching in a physiological environment. Moreover in vitro and in vivo toxicity studies demonstrated their unique biocompatibility. Si QDs and FNDs are hence ideal diagnostic tools and promising non-toxic vectors for the delivery of therapeutic cargos. Most relevant examples of applications of Si QDs and FNDs to long-term bioimaging are discussed in this review comparing the toxicity and the stability of different nanoprobes.

  6. Confinement control mechanism for two-electron Hulthen quantum dots in plasmas

    Science.gov (United States)

    Bahar, M. K.; Soylu, A.

    2018-05-01

    In this study, for the first time, the energies of two-electron Hulthen quantum dots (TEHQdots) embedded in Debye and quantum plasmas modeled by the more general exponential cosine screened Coulomb (MGECSC) potential under the combined influence of electric and magnetic fields are investigated by numerically solving the Schrödinger equation using the asymptotic iteration method. To do this, the four different forms of the MGECSC potential, which set through the different cases of the potential parameters, are taken into consideration. We propose that plasma environments form considerable quantum mechanical effects for quantum dots and other atomic systems and that plasmas are important experimental arguments. In this study, by considering the quantum dot parameters, the external field parameters, and the plasma screening parameters, a control mechanism of the confinement on energies of TEHQdots and the frequency of the radiation emitted by TEHQdots as a result of any excitation is discussed. In this mechanism, the behaviors, similarities, the functionalities of the control parameters, and the influences of plasmas on these quantities are explored.

  7. Effects of Luttinger leads on the AC conductance of a quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Kai-Hua, E-mail: khy@bjut.edu.cn [College of Applied Sciences, Beijing University of Technology, Beijing 100122 (China); Qin, Chang-Dong [College of Applied Sciences, Beijing University of Technology, Beijing 100122 (China); Wang, Huai-Yu [Department of Physics, Tsinghua University, Beijing 100084 (China); Liu, Kai-Di [College of Applied Sciences, Beijing University of Technology, Beijing 100122 (China)

    2017-04-18

    Highlights: • The system exhibits photon-assisted single- and two-channel Kondo physics, depending on the intralead interaction. • The 1CK and 2CK mechanisms can coexist within a region of the intralead interaction parameter. • In the limit of strong interaction, the differential conductance scales as a power law both in bias voltage and in temperature. - Abstract: We investigate the joint effects of the intralead electron interaction and an external alternating gate voltage on the transport of a quantum dot coupled to two Luttinger liquid leads in the Kondo regime. We find the transferring between two Kondo physics mechanics by investigation of differential conductance. For very weak intralead interaction, the satellite and main Kondo resonant peaks appear in the differential conductance. For moderately strong intralead interaction, all the peaks disappear and evolve into dips, which signifies that a photon-assisted single-channel Kondo (1CK) physics turns into two-channel Kondo (2CK) physics. The 1CK and 2CK mechanisms can coexist within a region of the intralead interaction parameter. The 1CK physics transits to the 2CK one gradually, not suddenly. In the limit of strong interaction, all dips disappear. When the bias voltage is small, there is no photon exchange between the quantum dot and alternative field, and the differential conductance scales as a power law both in bias voltage and in temperature. As the field becomes stronger, the quantum dot will emit and absorb photons.

  8. Observation of single quantum dots in GaAs/AlAs micropillar cavities

    Energy Technology Data Exchange (ETDEWEB)

    Burger, Philipp; Karl, Matthias; Hu, Dongzhi; Schaadt, Daniel M.; Kalt, Heinz; Hetterich, Michael [Institut fuer Angewandte Physik, Universitaet Karlsruhe (Germany); DFG Center for Functional Nanostructures (CFN), Karlsruhe (Germany)

    2009-07-01

    In our contribution we present the fabrication steps of micropillar cavities and their optical properties. The layer structure consisting of a GaAs-based lambda-cavity sandwiched between two GaAs/AlAs distributed Bragg reflectors is grown by molecular-beam epitaxy. In(Ga)As quantum dots, emitting at around 950 nm, are embedded as optically active medium in the middle of the cavity. The pillars are milled out of this structure with a focused ion-beam. A confocal micro-photoluminescence set-up allows to measure optical cavity modes as well as single quantum dots in the pillars when using low excitation intensity. This enables us to observe a (thermal) shift of the single quantum dot peaks relative to the cavity mode. In addition, we increased the numerical aperture of the set-up (originally 0.4) with a solid immersion lens up to 0.8. Thus we are able to detect the fundamental mode of pillars with very small diameters. Furthermore, the collection efficiency increases substantially.

  9. Entangled exciton states in quantum dot molecules

    Science.gov (United States)

    Bayer, Manfred

    2002-03-01

    Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

  10. Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience

    Science.gov (United States)

    Pathak, Smita

    Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to

  11. Quantum dot doped solid polymer electrolyte for device application

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Pramod K.; Kim, Kang Wook; Rhee, Hee-Woo [Department of Chemical and Biomolecular Engineering, Sogang University, Mapo-Gu, Seoul 121-742 (Korea)

    2009-06-15

    ZnS capped CdSe quantum dots embedded in PEO:KI:I{sub 2} polymer electrolyte matrix have been synthesized and characterized for dye sensitized solar cell (DSSC) application. The complex impedance spectroscopy shows enhance in ionic conductivity ({sigma}) due to charges provide by quantum dots (QD) while AFM affirm the uniform distribution of QD into polymer electrolyte matrix. Cyclic voltammetry revealed the possible interaction between polymer electrolyte, QD and iodide/iodine. The photovoltaic performances of the DSSC containing quantum dots doped polymer electrolyte was also found to improve. (author)

  12. Strong-coupling polaron effect in quantum dots

    International Nuclear Information System (INIS)

    Zhu Kadi; Gu Shiwei

    1993-11-01

    Strong-coupling polaron in a parabolic quantum dot is investigated by the Landau-Pekar variational treatment. The polaron binding energy and the average number of virtual phonons around the electron as a function of the effective confinement length of the quantum dot are obtained in Gaussian function approximation. It is shown that both the polaron binding energy and the average number of virtual phonons around the electron decrease by increasing the effective confinement length. The results indicate that the polaronic effects are more pronounced in quantum dots than those in two-dimensional and three-dimensional cases. (author). 15 refs, 4 figs

  13. Silicon Quantum Dots with Counted Antimony Donor Implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

    2015-10-01

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

  14. Electrostatically defined silicon quantum dots with counted antimony donor implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  15. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    Science.gov (United States)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  16. Study of a Quantum Dot in an Excited State

    Science.gov (United States)

    Slamet, Marlina; Sahni, Viraht

    We have studied the first excited singlet state of a quantum dot via quantal density functional theory (QDFT). The quantum dot is represented by a 2D Hooke's atom in an external magnetostatic field. The QDFT mapping is from an excited singlet state of this interacting system to one of noninteracting fermions in a singlet ground state. The results of the study will be compared to (a) the corresponding mapping from a ground state of the quantum dot and (b) to the similar mapping from an excited singlet state of the 3D Hooke's atom.

  17. Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ian D. Tomlinson

    2007-01-01

    Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.

  18. Nuclear Spin Nanomagnet in an Optically Excited Quantum Dot

    Science.gov (United States)

    Korenev, V. L.

    2007-12-01

    Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei shifts the optical transition energy close to resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of the quantum dot electron. As a result the optically selected single quantum dot represents a tiny magnet with the ferromagnetic ordering of nuclear spins—the nuclear spin nanomagnet.

  19. Spin interactions in InAs quantum dots and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Doty, M.F.; Ware, M.E.; Stinaff, E.A.; Scheibner, M.; Bracker, A.S.; Ponomarev, I.V.; Badescu, S.C.; Reinecke, T.L.; Gammon, D. [Naval Research Lab, Washington, DC 20375 (United States); Korenev, V.L. [A.F. Ioffe Physical Technical Institute, St. Petersburg 194021 (Russian Federation)

    2006-12-15

    Spin interactions between particles in quantum dots or quantum dot molecules appear as fine structure in the photoluminescence spectra. Using the understanding of exchange interactions that has been developed from single dot spectra, we analyze the spin signatures of coupled quantum dots separated by a wide barrier such that inter-dot interactions are negligible. We find that electron-hole exchange splitting is directly evident. In dots charged with an excess hole, an effective hole-hole interaction can be turned on through tunnel coupling. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Second-harmonic imaging of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

    2000-01-01

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...

  1. Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula

    International Nuclear Information System (INIS)

    Lue Rong; Zhang Guangming

    2005-01-01

    Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.

  2. Semiconductor quantum dot-sensitized solar cells.

    Science.gov (United States)

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  3. Single Molecule Applications of Quantum Dots

    DEFF Research Database (Denmark)

    Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.

    2013-01-01

    Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows: 1......) QD blinking and bleaching statistics, 2) the use of QDs in high speed single particle tracking with a special focus on how to design the biofunctional coatings of QDs which enable specific targeting to single proteins or lipids of interest, 3) a hybrid lipid-DNA analogue binding QDs which allows...... for tracking single lipids in lipid bilayers, 4) two-photon fluorescence correlation spectroscopy of QDs and 5) optical trapping and excitation of single QDs. In all of these applications, the focus is on the single particle sensitivity level of QDs. The high applicability of QDs in live cell imaging...

  4. Terahertz wave generation in coupled quantum dots

    International Nuclear Information System (INIS)

    Ma Yu-Rong; Guo Shi-Fang; Duan Su-Qing

    2012-01-01

    Based on coupled quantum dots, we present an interesting optical effect in a four-level loop coupled system. Both the two upper levels and the two lower levels are designed to be almost degenerate, which induces a considerable dipole moment. The terahertz wave is obtained from the low-frequency component of the photon emission spectrum. The frequency of the terahertz wave can be controlled by tuning the energy levels via designing the nanostructure appropriately or tuning the driving laser field. A terahertz wave with adjustable frequency and considerable intensity (100 times higher than that of the Rayleigh line) can be obtained. It provides an effective scheme for a terahertz source. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Trajectory phases of a quantum dot model

    International Nuclear Information System (INIS)

    Genway, Sam; Hickey, James M; Garrahan, Juan P; Armour, Andrew D

    2014-01-01

    We present a thermodynamic formalism to study the trajectories of charge transport through a quantum dot coupled to two leads in the resonant-level model. We show that a close analogue of equilibrium phase transitions exists for the statistics of transferred charge; by tuning an appropriate ‘counting field’, crossovers to different trajectory phases are possible. Our description reveals a mapping between the statistics of a given device and current measurements over a range of devices with different dot–lead coupling strengths. Furthermore insight into features of the trajectory phases are found by studying the occupation of the dot conditioned on the transported charge between the leads; this is calculated from first principles using a trajectory biased two-point projective measurement scheme. (paper)

  6. Characteristics of chirped quantum dot superluminescent diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bae, H.C.; Park, H.L. [Department of Physics, Yonsei University, Seoul 120-749 (Korea); You, Y.C. [Department of Information and Communication Engineering, Sungkyunkwan University, Seoul 440-746 (Korea); Han, I.K. [Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650 (Korea); Kim, J.S. [Department of Image System Science and Engineering, Pukyong National University, Pusan Department of Image System Science and Engineering, Pukyong National University, Pusan 608-739 (Korea)

    2009-04-15

    We compared the superluminescent diodes (SLDs) of two types in order to see the effect of embedding another quantum dots (QDs) layer. The insertion of another QDs layer showed a new possibility for a wider spectrum. In addition, through comparing two kinds of SLD structures, the peak positions of the ground state and excited state were observed to be affected differently by band-filling, thermal effect, and the overlap of tails of excited state (ES) gain, according to the wafer structure, and the effect of the cap layer is superior to the carrier non-uniformity. We also revealed the temperature sensitivity of carriers in QDs through measuring characteristic temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Building devices from colloidal quantum dots.

    Science.gov (United States)

    Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

    2016-08-26

    The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

  8. Electron states in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-01-01

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

  9. FAST TRACK COMMUNICATION: Graphene based quantum dots

    Science.gov (United States)

    Zhang, H. G.; Hu, H.; Pan, Y.; Mao, J. H.; Gao, M.; Guo, H. M.; Du, S. X.; Greber, T.; Gao, H.-J.

    2010-08-01

    Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

  10. Tellurium quantum dots: Preparation and optical properties

    Science.gov (United States)

    Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

    2017-08-01

    Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

  11. Dynamic localization in quantum dots: Analytical theory

    International Nuclear Information System (INIS)

    Basko, D.M.; Skvortsov, M.A.; Kravtsov, V.E.

    2003-02-01

    We analyze the response of a complex quantum-mechanical system (e.g., a quantum dot) to a time-dependent perturbation φ(t). Assuming the dot to be described by random matrix theory for GOE we find the quantum correction to the energy absorption rate as a function of the dephasing time t φ . If φ(t) is a sum of d harmonics with incommensurate frequencies, the correction behaves similarly to that to the conductivity δσ d (t φ ) in the d-dimensional Anderson model of the orthogonal symmetry class. For a generic periodic perturbation the leading quantum correction is absent as in the systems of the unitary symmetry class, unless φ(-t+τ)=φ(t+τ) for some τ, which falls into the quasi-1d orthogonal universality class. (author)

  12. Protease-activated quantum dot probes

    International Nuclear Information System (INIS)

    Chang, Emmanuel; Miller, Jordan S.; Sun, Jiantang; Yu, William W.; Colvin, Vicki L.; Drezek, Rebekah; West, Jennifer L.

    2005-01-01

    We have developed a novel nanoparticulate luminescent probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This construct may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Release of AuNPs by peptide cleavage restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 h of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker

  13. PREFACE: Quantum dots as probes in biology

    Science.gov (United States)

    Cieplak, Marek

    2013-05-01

    The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated

  14. Spectral and Dynamical Properties of Single Excitons, Biexcitons, and Trions in Cesium-Lead-Halide Perovskite Quantum Dots.

    Science.gov (United States)

    Makarov, Nikolay S; Guo, Shaojun; Isaienko, Oleksandr; Liu, Wenyong; Robel, István; Klimov, Victor I

    2016-04-13

    Organic-inorganic lead-halide perovskites have been the subject of recent intense interest due to their unusually strong photovoltaic performance. A new addition to the perovskite family is all-inorganic Cs-Pb-halide perovskite nanocrystals, or quantum dots, fabricated via a moderate-temperature colloidal synthesis. While being only recently introduced to the research community, these nanomaterials have already shown promise for a range of applications from color-converting phosphors and light-emitting diodes to lasers, and even room-temperature single-photon sources. Knowledge of the optical properties of perovskite quantum dots still remains vastly incomplete. Here we apply various time-resolved spectroscopic techniques to conduct a comprehensive study of spectral and dynamical characteristics of single- and multiexciton states in CsPbX3 nanocrystals with X being either Br, I, or their mixture. Specifically, we measure exciton radiative lifetimes, absorption cross-sections, and derive the degeneracies of the band-edge electron and hole states. We also characterize the rates of intraband cooling and nonradiative Auger recombination and evaluate the strength of exciton-exciton coupling. The overall conclusion of this work is that spectroscopic properties of Cs-Pb-halide quantum dots are largely similar to those of quantum dots of more traditional semiconductors such as CdSe and PbSe. At the same time, we observe some distinctions including, for example, an appreciable effect of the halide identity on radiative lifetimes, considerably shorter biexciton Auger lifetimes, and apparent deviation of their size dependence from the "universal volume scaling" previously observed for many traditional nanocrystal systems. The high efficiency of Auger decay in perovskite quantum dots is detrimental to their prospective applications in light-emitting devices and lasers. This points toward the need for the development of approaches for effective suppression of Auger

  15. Poly(ethylene glycol)/carbon quantum dot composite solid films exhibiting intense and tunable blue–red emission

    International Nuclear Information System (INIS)

    Hao, Yanling; Gan, Zhixing; Xu, Jiaqing; Wu, Xinglong; Chu, Paul K.

    2014-01-01

    Highlights: • Poly(ethylene glycol)/carbon quantum dots (PEG/CQDs) composite solid films exhibiting strong and tunable blue–red emission were prepared. Successful preparation of tunable emitting CQDs solid films can extend the application of carbon quantum dots in photoelectric devices. • The mechanism of the tunable emission from the PEG/CQDs composite solid films was discussed. • On the basis of the characteristics of the PL from solid films in this work, the complex PL origins of CQDs were further defined. The PL mechanism provides insights into the fluorescence mechanism of CQDs and may promotes their applications. • Poly(ethylene glycol); carbon quantum dots; Strong and tunable blue-red emission; The fluorescent quantum yield of 12.6%. - Abstract: Although carbon quantum dots (CQDs) possess excellent luminescence properties, it is a challenge to apply water-soluble CQDs to tunable luminescent devices. Herein, quaternary CQDs are incorporated into poly(ethylene glycol) to produce poly(ethylene glycol)/CQD composite solid films which exhibit strong and tunable blue–red emission. The fluorescent quantum yield reaches 12.6% which is comparable to that of many liquid CQDs and the photoluminescence characteristics are determined to elucidate the fluorescence mechanism. The CQD solid films with tunable optical properties bode well for photoelectric devices especially displays

  16. Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas.

    Science.gov (United States)

    Sahu, Bibhuti Bhusan; Yin, Yongyi; Han, Jeon Geon; Shiratani, Masaharu

    2016-06-21

    The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3-0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.

  17. Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

    National Research Council Canada - National Science Library

    Raymer, Michael

    2003-01-01

    An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

  18. Colloidal quantum dot solids for solution-processed solar cells

    KAUST Repository

    Yuan, Mingjian; Liu, Mengxia; Sargent, Edward H.

    2016-01-01

    Solution-processed photovoltaic technologies represent a promising way to reduce the cost and increase the efficiency of solar energy harvesting. Among these, colloidal semiconductor quantum dot photovoltaics have the advantage of a spectrally

  19. Colloidal Quantum-Dot Photodetectors Exploiting Multiexciton Generation

    KAUST Repository

    Sukhovatkin, V.; Hinds, S.; Brzozowski, L.; Sargent, E. H.

    2009-01-01

    Multiexciton generation (MEG) has been indirectly observed in colloidal quantum dots, both in solution and the solid state, but has not yet been shown to enhance photocurrent in an optoelectronic device. Here, we report a class of solution

  20. Quantum dot conjugates in a sub-micrometer fluidic channel

    Science.gov (United States)

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  1. Coal as an abundant source of graphene quantum dots

    Science.gov (United States)

    Ye, Ruquan; Xiang, Changsheng; Lin, Jian; Peng, Zhiwei; Huang, Kewei; Yan, Zheng; Cook, Nathan P.; Samuel, Errol L. G.; Hwang, Chih-Chau; Ruan, Gedeng; Ceriotti, Gabriel; Raji, Abdul-Rahman O.; Martí, Angel A.; Tour, James M.

    2013-12-01

    Coal is the most abundant and readily combustible energy resource being used worldwide. However, its structural characteristic creates a perception that coal is only useful for producing energy via burning. Here we report a facile approach to synthesize tunable graphene quantum dots from various types of coal, and establish that the unique coal structure has an advantage over pure sp2-carbon allotropes for producing quantum dots. The crystalline carbon within the coal structure is easier to oxidatively displace than when pure sp2-carbon structures are used, resulting in nanometre-sized graphene quantum dots with amorphous carbon addends on the edges. The synthesized graphene quantum dots, produced in up to 20% isolated yield from coal, are soluble and fluorescent in aqueous solution, providing promise for applications in areas such as bioimaging, biomedicine, photovoltaics and optoelectronics, in addition to being inexpensive additives for structural composites.

  2. Spin current through quantum-dot spin valves

    International Nuclear Information System (INIS)

    Wang, J; Xing, D Y

    2006-01-01

    We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

  3. Nonequilibrium electron transport through quantum dots in the Kondo regime

    DEFF Research Database (Denmark)

    Wölfle, Peter; Paaske, Jens; Rosch, Achim

    2005-01-01

    Electron transport at large bias voltage through quantum dots in the Kondo regime is described within the perturbative renormalization group extended to nonequilibrium. The conductance, local magnetization, dynamical spin susceptibility and local spectral function are calculated. We show how...

  4. Quantum Dots in the Therapy: Current Trends and Perspectives.

    Science.gov (United States)

    Pohanka, Miroslav

    2017-01-01

    Quantum dots are an emerging nanomaterial with broad use in technical disciplines; however, their application in the field of biomedicine becomes also relevant and significant possibilities have appeared since the discovery in 1980s. The current review is focused on the therapeutic applications of quantum dots which become an emerging use of the particles. They are introduced as potent carriers of drugs and as a material well suited for the diagnosis of disparate pathologies like visualization of cancer cells or pathogenic microorganisms. Quantum dots toxicity and modifications for the toxicity reduction are discussed here as well. Survey of actual papers and patents in the field of quantum dots use in the biomedicine is provided. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  5. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

  6. Ge Quantum Dot Infrared Imaging Camera, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  7. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Tang, Jiang; Kramer, Illan J.; Ning, Zhijun; Sargent, Edward H.

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum

  8. Colloidal quantum dot solar cells exploiting hierarchical structuring

    KAUST Repository

    Labelle, André J.; Thon, Susanna; Masala, Silvia; Adachi, Michael M.; Dong, Haopeng; Farahani, Maryam; Ip, Alexander H.; Fratalocchi, Andrea; Sargent, E. H.

    2015-01-01

    Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells

  9. The transfer matrix approach to circular graphene quantum dots

    International Nuclear Information System (INIS)

    Nguyen, H Chau; Nguyen, Nhung T T; Nguyen, V Lien

    2016-01-01

    We adapt the transfer matrix (T -matrix) method originally designed for one-dimensional quantum mechanical problems to solve the circularly symmetric two-dimensional problem of graphene quantum dots. Similar to one-dimensional problems, we show that the generalized T -matrix contains rich information about the physical properties of these quantum dots. In particular, it is shown that the spectral equations for bound states as well as quasi-bound states of a circular graphene quantum dot and related quantities such as the local density of states and the scattering coefficients are all expressed exactly in terms of the T -matrix for the radial confinement potential. As an example, we use the developed formalism to analyse physical aspects of a graphene quantum dot induced by a trapezoidal radial potential. Among the obtained results, it is in particular suggested that the thermal fluctuations and electrostatic disorders may appear as an obstacle to controlling the valley polarization of Dirac electrons. (paper)

  10. Nodal ground states and orbital textures in semiconductor quantum dots

    Czech Academy of Sciences Publication Activity Database

    Lee, J.; Výborný, Karel; Han, J.E.; Žutič, I.

    2014-01-01

    Roč. 89, č. 4 (2014), "045315-1"-"045315-17" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dots * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  11. Quantum dot conjugates in a sub-micrometer fluidic channel

    Science.gov (United States)

    Stavis, Samuel M [Ithaca, NY; Edel, Joshua B [Brookline, MA; Samiee, Kevan T [Ithaca, NY; Craighead, Harold G [Ithaca, NY

    2008-07-29

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  12. The impact of doped silicon quantum dots on human osteoblasts

    Czech Academy of Sciences Publication Activity Database

    Ostrovská, L.; Brož, Antonín; Fučíková, A.; Bělinová, T.; Sugimoto, H.; Kanno, T.; Fujii, M.; Valenta, J.; Kalbáčová, M.H.

    2016-01-01

    Roč. 6, č. 68 (2016), s. 63403-63413 ISSN 2046-2069 Institutional support: RVO:67985823 Keywords : silicon quantum dots * osteoblasts * cytotoxicity * photoluminiscence bioimaging Subject RIV: EI - Biotechnology ; Bionics Impact factor: 3.108, year: 2016

  13. Photoinduced electric dipole in CuCl quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Naruse, Fumitaka; Kanno, Atsushi

    2003-01-01

    Electromodulated absorption spectra of CuCl quantum dots modulated at twice the modulation frequency of electric field, 2f, show prominent structure around persistently burned hole. It grows in proportion to square of the electric field in the same manner as the 2f component of electromodulated absorption spectra of the dots without the laser exposure. Even the f component of electromodulated signal was observed around the burned hole position. These observations are explained by considering electric dipole formed in hole burned and photoionized quantum dots. Photoionization not only produces persistent spectral hole burning but also the local built-in electric field and photoinduced dipole moment in quantum dots. The dipole moment is estimated to be about 5 debye for 3.2-nm-radius quantum dots. The dipole moments are randomly oriented but 1% anisotropy is deduced from the electromodulated signal at f

  14. Charge-extraction strategies for colloidal quantum dot photovoltaics

    KAUST Repository

    Lan, Xinzheng

    2014-02-20

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

  15. Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)

    International Nuclear Information System (INIS)

    Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle

    2006-01-01

    We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results

  16. Semiconductor quantum dots for bioimaging and biodiagnostic applications.

    Science.gov (United States)

    Kairdolf, Brad A; Smith, Andrew M; Stokes, Todd H; Wang, May D; Young, Andrew N; Nie, Shuming

    2013-01-01

    Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

  17. Electron Spin Coherence Times in Si/SiGe Quantum Dots

    Science.gov (United States)

    Jock, R. M.; He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.

    2014-03-01

    Single electron spin states in silicon have shown a great deal of promise as qubits due to their long spin relaxation (T1) and coherence (T2) times. Recent results exhibit a T2 of 250 us for electrons confined in Si/SiGe quantum dots at 350 mK. These experiments used conventional X-band (10 GHz) pulsed Electron Spin Resonance on a large area (3.5 mm x 20 mm), dual-gated, undoped Si/SiGe heterostructure quantum dots. These dots are induced in a natural Si quantum well by e-beam defined gates having a lithographic radius of 150 nm and pitch of 700 nm. The relatively large size of these dots led to closely spaced energy levels and long T2's could only be measured at sub-Kelvin temperatures. At 2K confined electrons displayed a 3 us T2, which is comparable to that of 2D electrons at that temperature. Decreasing the quantum dot size increases the electron confinement and reduces the effects of valley-splitting and spin-orbit coupling on the electron spin coherence times. We will report results on dots with 80 nm lithographic radii and a 375 nm pitch. This device displays an extended electron coherence time of 30 us at 2K, suggesting tighter confinement of electrons. Further measurements at lower temperatures are in progress. This work was supported in part by NSF through the Materials World Network program (DMR-1107606) and the Princeton MRSEC (DMR-0819860), and in part by the U.S. Army Research Office (W911NF-13-1-0179).

  18. Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells

    KAUST Repository

    Choi, Joshua J.; Wenger, Whitney N.; Hoffman, Rachel S.; Lim, Yee-Fun; Luria, Justin; Jasieniak, Jacek; Marohn, John A.; Hanrath, Tobias

    2011-01-01

    Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Non-Markovian spontaneous emission from a single quantum dot

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke

    2011-01-01

    We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system.......We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....

  20. Local Gate Control of a Carbon Nanotube Double Quantum Dot

    Science.gov (United States)

    2016-04-04

    describ- ing the levitation . Quantitative comparisons are made difficult by the complicated aniso- tropy of the nematic’s viscoelasticity (21). However...director fields. For example, as a straightforward extension of the levitation , a liquid crystal that twists through many periods (such as a cholesteric...Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and

  1. Spin-based quantum computation in multielectron quantum dots

    OpenAIRE

    Hu, Xuedong; Sarma, S. Das

    2001-01-01

    In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single spin system unles...

  2. Excitonic quantum interference in a quantum dot chain with rings.

    Science.gov (United States)

    Hong, Suc-Kyoung; Nam, Seog Woo; Yeon, Kyu-Hwang

    2008-04-16

    We demonstrate excitonic quantum interference in a closely spaced quantum dot chain with nanorings. In the resonant dipole-dipole interaction model with direct diagonalization method, we have found a peculiar feature that the excitation of specified quantum dots in the chain is completely inhibited, depending on the orientational configuration of the transition dipole moments and specified initial preparation of the excitation. In practice, these excited states facilitating quantum interference can provide a conceptual basis for quantum interference devices of excitonic hopping.

  3. Double Tunneling Injection Quantum Dot Lasers for High Speed Operation

    Science.gov (United States)

    2017-10-23

    Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution

  4. Quantum optics with quantum dots in photonic nanowires

    DEFF Research Database (Denmark)

    We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....

  5. Spin-orbit-enhanced Wigner localization in quantum dots

    DEFF Research Database (Denmark)

    Cavalli, Andrea; Malet, F.; Cremon, J. C.

    2011-01-01

    We investigate quantum dots with Rashba spin-orbit coupling in the strongly-correlated regime. We show that the presence of the Rashba interaction enhances the Wigner localization in these systems, making it achievable for higher densities than those at which it is observed in Rashba-free quantum...... dots. Recurring shapes in the pair distribution functions of the yrast spectrum, which might be associated with rotational and vibrational modes, are also reported....

  6. Theory of Spin States of Quantum Dot Molecules

    Science.gov (United States)

    Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

    2007-04-01

    The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

  7. Ultrafast optical signal processing using semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....

  8. Noise and saturation properties of semiconductor quantum dot optical amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

  9. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  10. Whispering-gallery mode microcavity quantum-dot lasers

    International Nuclear Information System (INIS)

    Kryzhanovskaya, N V; Maximov, M V; Zhukov, A E

    2014-01-01

    This review examines axisymmetric-cavity quantum-dot microlasers whose emission spectrum is determined by whisperinggallery modes. We describe the possible designs, fabrication processes and basic characteristics of the microlasers and demonstrate the possibility of lasing at temperatures above 100 °C. The feasibility of creating multichannel optical sources based on a combination of a broadband quantum-dot laser and silicon microring modulators is discussed. (review)

  11. Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots

    DEFF Research Database (Denmark)

    Rudner, Mark Spencer; Levitov, Leonid

    2013-01-01

    Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce......) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods....

  12. Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells

    KAUST Repository

    Choi, Joshua J.

    2011-06-03

    Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Red-shift of the photoluminescent emission peaks of CdTe quantum dots due to the synergistic interaction with carbon quantum dot mixtures

    International Nuclear Information System (INIS)

    Pelayo, E; Zazueta, A; López-Delgado, R; Ayón, A; Saucedo, E; Ruelas, R

    2016-01-01

    We report the relatively large red-shift effect observed in down-shifting carbon quantum dots (CQDs) that is anticipated to have a positive impact on the power conversion efficiency of solar cells. Specifically, with an excitation wavelength of 390 nm, CQDs of different sizes, exhibited down-shifted emission peaks centered around 425 nm. However, a solution comprised of a mixture of CQDs of different sizes, was observed to have an emission peak red-shifted to 515 nm. The effect could arise when larger carbon quantum dots capture the photons emitted by their smaller counterparts followed by the subsequent re-emission at longer wavelengths. Furthermore, the red-shift effect was also observed in CdTe QDs when added to a solution with the aforementioned mixture of Carbon QDs. Thus, whereas a solution solely comprised of a collection of CdTe QDs of different sizes, exhibited a down-shifted photoluminescence centered around 555 nm, the peak was observed to be further red-shifted to 580 nm when combined with the solution of CQDs of different sizes. The quantum dot characterization included crystal structure analysis as well as photon absorption and photoluminescence wavelengths. Subsequently, the synthesized QDs were dispersed in a polymeric layer of poly-methyl-methacrylate (PMMA) and incorporated on functional and previously characterized solar cells, to quantify their influence in the electrical performance of the photovoltaic structures. We discuss the synthesis and characterization of the produced Carbon and CdTe QDs, as well as the observed improvement in the power conversion efficiency of the fabricated photovoltaic devices. (paper)

  14. Facile synthesis of red- to near-infrared-emitting CdTe{sub x}Se{sub 1-x} alloyed quantum dots via a noninjection one-pot route

    Energy Technology Data Exchange (ETDEWEB)

    Liao Lifang; Zhang Hua [Key Laboratory for Advanced Materials, Department of Chemistry, East China University of Science and Technology, Shanghai 200237 (China); Zhong Xinhua, E-mail: zhongxh@ecust.edu.c [Key Laboratory for Advanced Materials, Department of Chemistry, East China University of Science and Technology, Shanghai 200237 (China)

    2011-02-15

    High-quality CdTeSe colloidal nanocrystals with gradient distribution of components, consisting of Te-rich inner cores and Se-rich outer shells, were synthesized in a 'green' solvent paraffin via a noninjection one-pot approach with the use of cadmium oxide (CdO), elemental tellurium, and elemental selenium as Cd, Te, and Se sources, respectively. All of these reactants were loaded at room temperature. This features synthetic reproducibility and large-scale capability. The bandgap engineering of the obtained CdTeSe QDs can be conveniently realized through the variation of growth temperature. Red- to near-infrared-emitting (620-780 nm) QDs with nearly identical particle sizes can be obtained when the reaction temperature was changed from 180 to 280 {sup o}C with the fixation of precursor feed ratio at 5Cd-0.5Te-0.5Se. The as-prepared CdTeSe QDs exhibit PL QY as high as 53%. The resulting CdTeSe QDs were characterized by UV-vis and photoluminescence spectroscopy, powder X-ray diffraction, transmission electron microscopy, and inductively coupled plasma atomic emission spectroscopy.

  15. Fluorescence from a quantum dot and metallic nanosphere hybrid system

    Energy Technology Data Exchange (ETDEWEB)

    Schindel, Daniel G. [Department of Mathematics and Statistics, University of Winnipeg, 515 Portage Avenue, Winnipeg, MB, R3B 2E9 (Canada); Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, 1151 Richmond Street, London, ON, N6A 3K7 (Canada)

    2014-03-31

    We present energy absorption and interference in a quantum dot-metallic nanosphere system embedded on a dielectric substrate. A control field is applied to induce dipole moments in the nanosphere and the quantum dot, and a probe field is applied to monitor absorption. Dipole moments in the quantum dot or the metal nanosphere are induced, both by the external fields and by each other's dipole fields. Thus, in addition to direct polarization, the metal nanosphere and the quantum dot will sense one another via the dipole-dipole interaction. The density matrix method was used to show that the absorption spectrum can be split from one peak to two peaks by the control field, and this can also be done by placing the metal sphere close to the quantum dot. When the two are extremely close together, a self-interaction in the quantum dot produces an asymmetry in the absorption peaks. In addition, the fluorescence efficiency can be quenched by the addition of a metal nanosphere. This hybrid system could be used to create ultra-fast switching and sensing nanodevices.

  16. Graphene quantum dots probed by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)

    2017-11-15

    Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

    Science.gov (United States)

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-07-28

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  18. Spectroscopy characterization and quantum yield determination of quantum dots

    International Nuclear Information System (INIS)

    Ortiz, S N Contreras; Ospino, E Mejía; Cabanzo, R

    2016-01-01

    In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum. (paper)

  19. Heparin conjugated quantum dots for in vitro imaging applications.

    Science.gov (United States)

    Maguire, Ciaran Manus; Mahfoud, Omar Kazem; Rakovich, Tatsiana; Gerard, Valerie Anne; Prina-Mello, Adriele; Gun'ko, Yurii; Volkov, Yuri

    2014-11-01

    In this work heparin-gelatine multi-layered cadmium telluride quantum dots (QDgel/hep) were synthesised using a novel 'one-pot' method. The QDs produced were characterised using various spectroscopic and physiochemical techniques. Suitable QDs were then selected and compared to thioglycolic acid stabilised quantum dots (QDTGA) and gelatine coated quantum dots (QDgel) for utilisation in in vitro imaging experiments on live and fixed permeabilised THP-1, A549 and Caco-2 cell lines. Exposure of live THP-1 cells to QDgel/hep resulted in localisation of the QDs to the nucleus of the cells. QDgel/hep show affinity for the nuclear compartment of fixed permeabilised THP-1 and A549 cells but remain confined to cytoplasm of fixed permeabilised Caco-2 cells. It is postulated that heparin binding to the CD11b receptor facilitates the internalisation of the QDs into the nucleus of THP-1 cells. In addition, the heparin layer may reduce the unfavourable thrombogenic nature of quantum dots observed in vivo. In this study, heparin conjugated quantum dots were found to have superior imaging properties compared to its native counterparts. The authors postulate that heparin binding to the CD11b receptor facilitates QD internalization to the nucleus, and the heparin layer may reduce the in vivo thrombogenic properties of quantum dots. Copyright © 2014 Elsevier Inc. All rights reserved.

  20. First principles study of edge carboxylated graphene quantum dots

    Science.gov (United States)

    Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.

    2018-05-01

    The structure stability and electronic properties of edge carboxylated hexagonal and triangular graphene quantum dots are investigated using density functional theory. The calculated binding energies show that the hexagonal clusters with armchair edges have the highest stability among all the quantum dots. The binding energy of carboxylated graphene quantum dots increases by increasing the number of carboxyl groups. Our study shows that the total dipole moment significantly increases by adding COOH with the highest value observed in triangular clusters. The edge states in triangular graphene quantum dots with zigzag edges produce completely different energy spectrum from other dots: (a) the energy gap in triangular zigzag is very small as compared to other clusters and (b) the highest occupied molecular orbital is localized at the edges which is in contrast to other clusters where it is distributed over the cluster surface. The enhanced reactivity and the controllable energy gap by shape and edge termination make graphene quantum dots ideal for various nanodevice applications such as sensors. The infrared spectra are presented to confirm the stability of the quantum dots.

  1. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    Lin Wen

    2017-07-01

    Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  2. Tunable single quantum dot nanocavities for cavity QED experiments

    International Nuclear Information System (INIS)

    Kaniber, M; Laucht, A; Neumann, A; Bichler, M; Amann, M-C; Finley, J J

    2008-01-01

    We present cavity quantum electrodynamics experiments performed on single quantum dots embedded in two-dimensional photonic crystal nanocavities. We begin by describing the structural and optical properties of the quantum dot sample and the photonic crystal nanocavities and compare the experimental results with three-dimensional calculations of the photonic properties. The influence of the tailored photonic environment on the quantum dot spontaneous emission dynamics is studied using spectrally and spatially dependent time-resolved spectroscopy. In ensemble and single dot measurements we show that the photonic crystals strongly enhance the photon extraction efficiency and, therefore, are a promising concept for realizing efficient single-photon sources. Furthermore, we demonstrate single-photon emission from an individual quantum dot that is spectrally detuned from the cavity mode. The need for controlling the spectral dot-cavity detuning is discussed on the basis of shifting either the quantum dot emission via temperature tuning or the cavity mode emission via a thin film deposition technique. Finally, we discuss the recently discovered non-resonant coupling mechanism between quantum dot emission and cavity mode for large detunings which drastically lowers the purity of single-photon emission from dots that are spectrally coupled to nanocavity modes.

  3. Colloidal quantum dot photovoltaics: The effect of polydispersity

    KAUST Repository

    Zhitomirsky, David

    2012-02-08

    The size-effect tunability of colloidal quantum dots enables facile engineering of the bandgap at the time of nanoparticle synthesis. The dependence of effective bandgap on nanoparticle size also presents a challenge if the size dispersion, hence bandgap variability, is not well-controlled within a given quantum dot solid. The impact of this polydispersity is well-studied in luminescent devices as well as in unipolar electronic transport; however, the requirements on monodispersity have yet to be quantified in photovoltaics. Here we carry out a series of combined experimental and model-based studies aimed at clarifying, and quantifying, the importance of quantum dot monodispersity in photovoltaics. We successfully predict, using a simple model, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using this same experimentally tested model the implications of a broadened quantum dot population on device performance. We report that present-day colloidal quantum dot photovoltaic devices with typical inhomogeneous linewidths of 100-150 meV are dominated by surface traps, and it is for this reason that they see marginal benefit from reduction in polydispersity. Upon eliminating surface traps, achieving inhomogeneous broadening of 50 meV or less will lead to device performance that sees very little deleterious impact from polydispersity. © 2012 American Chemical Society.

  4. Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG-QDCFET)

    Science.gov (United States)

    Karmakar, Supriya

    2014-10-01

    This paper presents the implementation of quaternary logic circuits based on quantum dot gate-quantum dot channel field effect transistor (QDG-QDCFET). The super lattice structure in the quantum dot channel region of QDG-QDCFET and the electron tunnelling from inversion channel to the quantum dot layer in the gate region of a QDG-QDCFET change the threshold voltage of this device which produces two intermediate states between its ON and OFF states. This property of QDG-QDCFET is used to implement multi-valued logic for future multi-valued logic circuit. This paper presents the design of basic quaternary logic operation such as inverter, AND and OR operation based on QDG-QDCFET.

  5. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    Science.gov (United States)

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  6. Interference with a quantum dot single-photon source and a laser at telecom wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Felle, M. [Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Centre for Advanced Photonics and Electronics, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Huwer, J., E-mail: jan.huwer@crl.toshiba.co.uk; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J. [Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Penty, R. V. [Centre for Advanced Photonics and Electronics, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom)

    2015-09-28

    The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons.

  7. Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

    International Nuclear Information System (INIS)

    Uran, Can; Erdem, Talha; Guzelturk, Burak; Perkgöz, Nihan Kosku; Jun, Shinae; Jang, Eunjoo; Demir, Hilmi Volkan

    2014-01-01

    In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

  8. A mode-locked external-cavity quantum-dot laser with a variable repetition rate

    International Nuclear Information System (INIS)

    Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

    2013-01-01

    A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  9. Stability of the mode-locking regime in tapered quantum-dot lasers

    Science.gov (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

    2018-02-01

    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  10. Site control technique for quantum dots using electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  11. Site control technique for quantum dots using electron beam induced deposition

    International Nuclear Information System (INIS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-01-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

  12. Interference with a quantum dot single-photon source and a laser at telecom wavelength

    International Nuclear Information System (INIS)

    Felle, M.; Huwer, J.; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Farrer, I.; Ritchie, D. A.; Penty, R. V.

    2015-01-01

    The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons

  13. The analytical approach to optimization of active region structure of quantum dot laser

    International Nuclear Information System (INIS)

    Korenev, V V; Savelyev, A V; Zhukov, A E; Omelchenko, A V; Maximov, M V

    2014-01-01

    Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value

  14. The analytical approach to optimization of active region structure of quantum dot laser

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2014-10-01

    Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value.

  15. Investigation of the optical characteristics of a combination of InP/ZnS-quantum dots with MWCNTs in a PMMA matrix

    Science.gov (United States)

    Landi, G.; Henninger, M.; De Girolamo del Mauro, A.; Borriello, C.; Di Luccio, T.; Neitzert, H. C.

    2013-10-01

    In the present study we investigated a combination of quantum dots with multi-walled carbon nanotubes as a possible future additive to the active layer of polymer solar cells. In this case the quantum dots should serve to enhance the long wavelength response of the solar cell, while the nanotubes enhance the charge carrier collection efficiency by favoring charge carrier separation and enhancement of the lateral conduction of the films. In order to clarify the interplay of the nanoparticles only, we deposited them into a non-conducting and transparent polymethyl-methalacrylate (PMMA) matrix. InP/ZnS quantum dots with an emission peak wavelength of 660 nm have been chosen in this study, because their addition can enhance the long wavelength response of conventional poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) bulk heterostructure polymer solar cells. In our study we kept the quantum dot concentration constant and varied the concentration of the carbon nanotubes (CNTs) in the deposited films. The characterization of the film morphology by scanning electron microscopy (SEM) imaging and of the optical properties by photoluminescence and transmittance revealed a rather complex interplay between nanotubes and quantum dots. In particular we found a strong quenching of the photoluminescence and an inhomogeneous CNT distribution for carbon nanotube concentrations exceeding 1%. The decrease in optical transmittance of the films with increasing CNT concentration is less pronounced, when quantum dots (QDs) are added. The optical transmittance in a wavelength range between 380 nm and 800 nm of the composites could be expressed empirically as a simple second order polynomial function.

  16. Facile synthetic method for pristine graphene quantum dots and graphene oxide quantum dots: origin of blue and green luminescence.

    Science.gov (United States)

    Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok

    2013-07-19

    Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

    Directory of Open Access Journals (Sweden)

    Giovanni Giannoccaro

    2016-01-01

    Full Text Available In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ indium gallium nitride (InGaN self-assembled quantum dot superlattice (QDSL is developed. It considers a simplified cuboid shape for quantum dots (QDs. The semi-analytical investigation starts from evaluation through the three-dimensional (3D finite element method (FEM simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers’ electric potentials and effective masses for the conduction band (CB and three valence sub-bands for each direction are evaluated. For the minibands’ investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D Kronig–Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier–Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE and magnetic (TM incident light polarization is calculated using Fermi’s golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.

  18. Hybrid zinc oxide/graphene electrodes for depleted heterojunction colloidal quantum-dot solar cells.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Aashuri, Hossein; Simchi, Abdolreza; Fan, Zhiyong

    2015-10-07

    Recently, hybrid nanocomposites consisting of graphene/nanomaterial heterostructures have emerged as promising candidates for the fabrication of optoelectronic devices. In this work, we have employed a facile and in situ solution-based process to prepare zinc oxide/graphene quantum dots (ZnO/G QDs) in a hybrid structure. The prepared hybrid dots are composed of a ZnO core, with an average size of 5 nm, warped with graphene nanosheets. Spectroscopic studies show that the graphene shell quenches the photoluminescence intensity of the ZnO nanocrystals by about 72%, primarily due to charge transfer reactions and static quenching. A red shift in the absorption peak is also observed. Raman spectroscopy determines G-band splitting of the graphene shell into two separated sub-bands (G(+), G(-)) caused by the strain induced symmetry breaking. It is shown that the hybrid ZnO/G QDs can be used as a counter-electrode for heterojunction colloidal quantum-dot solar cells for efficient charge-carrier collection, as evidenced by the external quantum efficiency measurement. Under the solar simulated spectrum (AM 1.5G), we report enhanced power conversion efficiency (35%) with higher short current circuit (80%) for lead sulfide-based solar cells as compared to devices prepared by pristine ZnO nanocrystals.

  19. Compact Interconnection Networks Based on Quantum Dots

    Science.gov (United States)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Matthew

    2003-01-01

    Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary

  20. Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots

    Directory of Open Access Journals (Sweden)

    Viktoriia Kornich

    2018-05-01

    Full Text Available We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their relaxation and decoherence times, in particular as a function of level hybridization, temperature, magnetic field, spin orbit interaction, and detuning between the quantum dots, using Bloch-Redfield theory. We show that the magnetic field gradient, which is usually applied to operate the spin qubit, may reduce the relaxation time by more than an order of magnitude. Using this insight, we identify an optimal regime where the magnetic field gradient does not affect the relaxation time significantly, and we propose regimes of longest decay times. We take into account the effects of one-phonon and two-phonon processes and suggest how our theory can be tested experimentally. The spin lifetimes we find here for Si-based quantum dots are significantly longer than the ones reported for their GaAs counterparts.