WorldWideScience

Sample records for emitting quantum-dot heterostructures

  1. Quantum Dot Light Emitting Diode

    Energy Technology Data Exchange (ETDEWEB)

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  2. Quantum Dot Light Emitting Diode

    Energy Technology Data Exchange (ETDEWEB)

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  3. Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

    KAUST Repository

    Han, Shikui

    2017-07-04

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn -WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.

  4. A Strategy of Solution-Processed All-Inorganic-Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes.

    Science.gov (United States)

    Shi, Zhifeng; Li, Sen; Li, Ying; Ji, Huifang; Li, Xinjian; Wu, Di; Xu, Tingting; Chen, Yongsheng; Tian, Yongtao; Zhang, Yuantao; Shan, Chongxin; Du, Guotong

    2018-01-11

    Recently, an pressing requirement of solid-state lighting sources with high-performance and low-cost has motivated increasing research in metal halide perovskites. But the relatively low emission efficiency and poor operation stability of perovskite light-emitting diodes (LEDs) are still critical drawbacks. In this study, a strategy of solution-processed all-inorganic-heterostructure was proposed to overcome the emission efficiency and operation stability issues facing perovskite LEDs' challenges. Solution-processed n-ZnO nanoparticles and p-NiO are used as the carrier-injectors to fabricate all-inorganic-heterostructured CsPbBr3 quantum dot LEDs, and a high-efficiency green emission is achieved with maximum luminance of 6093.2 cd/m2, external quantum efficiency of 3.79%, and current efficiency of 7.96 cd/A. More importantly, the studied perovskite LEDs possess a good operation stability after a long test time in air ambient. Typically, the devices can endure a high humidity (75%, 12 h) and a high working temperature (393 K, three heating/cooling cycles) even without encapsulation, and the operation stability is better than any previous reports. It is anticipated that this work provide an effective strategy for the fabrication of high-performance perovskite LEDs with good stability under ambient and harsh conditions, making practical applications of such LEDs a real possibility.

  5. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  6. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  7. Synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures for highly efficient green quantum dot light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Han, Shikui; Tan, Chaoliang; Zhang, Xiao; Chen, Junze; Huang, Ying; Chen, Bo; Luo, Zhimin; Ma, Qinglang; Sindoro, Melinda; Zhang, Hua [Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore (Singapore); Yang, Xuyong [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Zhu, Yihan; Han, Yu [Advanced Membranes and Porous Materials Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal (Saudi Arabia); Zhang, Hao; Li, Hai; Huang, Xiao; Huang, Wei [Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech) (China); Qi, Xiaoying [Singapore Institute of Manufacturing Technology, Singapore (Singapore); Sun, Xiao Wei [Luminous. Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (Singapore); Dept. of Electrical and Electronic Engineering, College of Engineering, Southern Univ. of Science and Technology, Nanshan, Shenzhen, Guangdong (China)

    2017-08-21

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO{sub n}-WX{sub 2} (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO{sub n} nanomaterials. The WO{sub n}-WX{sub 2} heterostructures are composed of WO{sub 2.9} nanoparticles (NPs) or WO{sub 2.7} nanowires (NWs) grown together with single- or few-layer WX{sub 2} nanosheets (NSs). As a proof-of-concept application, the WO{sub n}-WX{sub 2} heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO{sub 2.9} NP-WSe{sub 2} NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m(-2).

    Science.gov (United States)

    Wang, Hung Chia; Zhang, Heng; Chen, Hao Yue; Yeh, Han Cheng; Tseng, Mei Rurng; Chung, Ren Jei; Chen, Shuming; Liu, Ru Shi

    2017-04-01

    Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m(-2) , low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W(-1) ). © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Prasankumar, Rohit P [Los Alamos National Laboratory; Taylor, Antoinette J [Los Alamos National Laboratory

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  10. Semitransparent quantum dot light-emitting diodes by cadmium-free colloidal quantum dots.

    Science.gov (United States)

    Kim, Yohan; Ippen, Christian; Greco, Tonino; Oh, Min Suk; Chul, Jong Han; Lee, Jeongno; Wedel, Armin; Kim, Jiwan

    2014-11-01

    The InP/ZnSe/ZnS multishell colloidal quantum dots (QDs) were prepared by convenient heating-up method for an emission layer of semitransparent quantum dot light-emitting diodes (QD-LEDs). The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent (PL) quantum yield (QY) of 45%. The multishell on the indium phosphide (InP) core helped increasing QY and stability by reducing interfacial defects. Using a Ca/Ag cathode, the whole QD-LEDs were semitransparent throughout the visible wavelengths. The maximum brightness and currernt efficiency of semitransparent QD-LEDs reached 587 cd/m2 and 1.52 cd/A by controlling the thickness of Ca/Ag cathode, which is comparable to the device with opaque LiF/Al cathode (1444 cd/m2 and 1.98 cd/A). The performance of our semitransparent and eco-friendly device is not matched with traditional cadmium (Cd) based QD-LEDs yet, but it shows the great potential for various window-type information displays.

  11. Graphene encapsulated gold nanoparticle-quantum dot heterostructures and their electrochemical characterization

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuan [Metallurgical and Materials Engineering Department, Center for Materials for Information Technology (MINT), The University of Alabama, Tuscaloosa, AL 35487 (United States); Chopra, Nitin, E-mail: nchopra@eng.ua.edu [Metallurgical and Materials Engineering Department, Center for Materials for Information Technology (MINT), The University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487 (United States); Department of Chemistry, The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2015-07-30

    Highlights: • Patterning of multilayer graphene shell encapsulated gold nanoparticles (GNPs). • Binding of quantum dots to GNPs resulted in GNP-QD heterostructures. • The heterostructures were characterized for their electrochemical properties. - Abstract: A simple technique for patterning multilayer graphene shell encapsulated gold nanoparticles (GNPs) on the silicon substrate and their further surface decoration with semiconducting quantum dots (QDs) is reported. This leads to the fabrication of a novel silicon electrode decorated with GNP-QD hybrids or heterostructures. The morphology, structure, and composition of the GNPs and GNP-QD heterostructures were evaluated using microscopic and spectroscopic techniques. The heterostructures decorated silicon electrode was also evaluated for the electronic and electrochemical properties. The results showed that the electrical characteristics of the silicon substrate were significantly improved by decorating with GNPs and quantum dots. Furthermore, GNP-QD heterostructure electrode was observed to show significantly increased electrochemical charge transfer activity.

  12. Epitaxial Heterostructures of Lead Selenide Quantum Dots on Hematite Nanowires.

    Science.gov (United States)

    Selinsky, Rachel S; Shin, Sanghun; Lukowski, Mark A; Jin, Song

    2012-06-21

    We present a novel method for synthesizing epitaxial quantum dot-nanowire (QD-NW) heterostructures using the example of colloidal PbSe QDs decorated on furnace-grown hematite (α-Fe2O3) NWs. The direct heterogeneous nucleation of QDs on Fe2O3 NWs relies upon an aggressive surface dehydration of the as-synthesized Fe2O3 NWs at 350 °C under vacuum and subsequent introduction of colloidal reactants resulting in direct growth of PbSe QDs on Fe2O3. The synthesis is tunable: the QD diameter distribution and density of QDs on the NWs increase with increased dehydration time, and QD diameters and size distributions decrease with decreased injection temperature of the colloidal synthesis. Transmission electron microscopy (TEM) structural analysis reveals direct heteroepitaxial heterojunctions where the matching faces can be PbSe (002) and Fe2O3 (003) with their respective [11̅0] crystallographic directions aligned. This can be a general approach for integrating colloidal and furnace synthetic techniques, thus broadening possible material combinations for future high-quality, epitaxial nanoscale heterostructures for solar applications.

  13. All-Quantum-Dot Infrared Light-Emitting Diodes

    KAUST Repository

    Yang, Zhenyu

    2015-12-22

    © 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

  14. White Light Electroluminescence by Organic-Inorganic Heterostructures with CdSe Quantum Dots as Red Light Emitters

    Directory of Open Access Journals (Sweden)

    Ilker Oner

    2011-01-01

    Full Text Available We have developed a white organic light-emitting diode featuring a double emission layer comprising a blue light-emitting conductive polymer as a host material for Cadmium Selenide (CdSe quantum dots as red light emitters and tris-(8-hydroxyquinoline aluminium thin layer for green light emission. The Commission Internationale de l'Eclairage coordinates of the emitting light of the device were found to be (0.32, 0.40 which were only slightly changed over a range of applied voltages between 5 and 10 volts. The use of CdSe nanocrystalline quantum dots (surface-stabilized with hexadecylamine/trioctylphosphine oxide ligands in the hybrid heterostructure with poly(9,9-di-n-octylfluorenyl-2,7-diyl conductive polymer was studied for a variety of CdSe concentrations developing the performance of the device in means of overcoming segregation problems in the blend. Besides, constituents' ratio was further examined for the exploration of possible energy transfer from polymer host material to the CdSe quantum dots as a key factor for well-balanced emission in the electroluminescent devices.

  15. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    DEFF Research Database (Denmark)

    Hu, Yongjie; Churchill, Hugh; Reilly, David

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation......: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots...... and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin...

  16. Graphene encapsulated gold nanoparticle-quantum dot heterostructures and their electrochemical characterization

    Science.gov (United States)

    Li, Yuan; Chopra, Nitin

    2015-07-01

    A simple technique for patterning multilayer graphene shell encapsulated gold nanoparticles (GNPs) on the silicon substrate and their further surface decoration with semiconducting quantum dots (QDs) is reported. This leads to the fabrication of a novel silicon electrode decorated with GNP-QD hybrids or heterostructures. The morphology, structure, and composition of the GNPs and GNP-QD heterostructures were evaluated using microscopic and spectroscopic techniques. The heterostructures decorated silicon electrode was also evaluated for the electronic and electrochemical properties. The results showed that the electrical characteristics of the silicon substrate were significantly improved by decorating with GNPs and quantum dots. Furthermore, GNP-QD heterostructure electrode was observed to show significantly increased electrochemical charge transfer activity.

  17. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  18. Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Jia, G.Z.; Sun, L.

    2005-01-01

    Time-resolved photoluminescence (PL) of sub-monolayer (SML) InGaAs/GaAs quantum-dot-quantum-well heterostructures was measured at 5 K for the first time. The radiative lifetime of SML quantum dots (QDs) increases from 500 ps to 800 ps with the increase of the size of QDs, which is related...

  19. Quantum dot light emitting devices for photomedical applications.

    Science.gov (United States)

    Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie

    2017-03-01

    While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM.

  20. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun

    2016-08-16

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  1. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    OpenAIRE

    Hu, Yongjie; Churchill, Hugh; Reilly, David; Xiang, Jie; Lieber, Charles; M. Marcus, Charles

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top g...

  2. Improved light emitting UV curable PbS quantum dots-polymer composite optical waveguides

    Science.gov (United States)

    Shen, Kai; Baig, Sarfaraz; Jiang, Guomin; Paik, Young-hun; Kim, Sung Jin; Wang, Michael R.

    2017-11-01

    We present for the first-time light emitting ultraviolet (UV) curable active PbS quantum dots-polymer composite optical waveguides fabricated by vacuum assisted microfluidic (VAM) soft lithography technique. PbS quantum dots were synthesized by colloidal chemistry methods with tunable sizes resulting in light emissions in near infrared wavelengths. UV curable polymer of selective refractive index were synthesized facilitating waveguide mode confinement and good PbS quantum dots solubility. Photoluminescence of the composite exhibited ∼ 30 times better brightness than PbS-SU-8 composites. Light emitting multi-mode waveguides of about 50 × 42 μm cross-sectional dimension were successful demonstrated. Light emitting single-mode waveguides were fabricated by VAM technique with sectional flow tapers.

  3. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  4. Modulation response of quantum dot nanolight-emitting-diodes exploiting purcell-enhanced spontaneous emission

    DEFF Research Database (Denmark)

    Skovgård, Troels Suhr; Gregersen, Niels; Lorke, Michael

    2011-01-01

    The modulation bandwidth for a quantum dot light-emitting device is calculated using a detailed model for the spontaneous emission including the optical and electronic density-of-states. We show that the Purcell enhancement of the spontaneous emission rate depends critically on the degree...

  5. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  6. Tunable band offset and recombination in ZnO nanowire-CdTe quantum dot heterostructures

    Science.gov (United States)

    He, Haiping; Gan, Lu; Sun, Luwei; Ye, Zhizhen

    2017-10-01

    ZnO nanowire (NW)-CdTe quantum dot (QD) type-II heterostructures were constructed using hydrothermally grown ZnO and colloidal CdTe QDs. Photoluminescence (PL) spectroscopy was used to investigate the charge transfer and band offset between CdTe QDs and ZnO NWs. The results demonstrated that the PL shows obvious redshift and prolonged lifetime in the heterostructure, indicating that it originates from recombination between electrons localized in ZnO and holes localized in CdTe. The results reveal that the band offset and charge recombination can be tuned by the growth time or size of CdTe QDs. Our results demonstrate that PL can be a useful tool to evaluate the band alignment and charge recombination in type-II semiconductor heterostructures.

  7. Few electron double quantum dots in InAs/InP nanowire heterostructures.

    Science.gov (United States)

    Fuhrer, Andreas; Fröberg, Linus E; Pedersen, Jonas Nyvold; Larsson, Magnus W; Wacker, Andreas; Pistol, Mats-Erik; Samuelson, Lars

    2007-02-01

    We report on fabrication of double quantum dots in catalytically grown InAs/InP nanowire heterostructures. In the few-electron regime, starting with both dots empty, our low-temperature transport measurements reveal a clear shell structure for sequential charging of the larger of the two dots with up to 12 electrons. The resonant current through the double dot is found to depend on the orbital coupling between states of different radial symmetry. The charging energies are well described by a capacitance model if next-neighbor capacitances are taken into account.

  8. Highly efficient cadmium-free quantum dot light-emitting diodes enabled by the direct formation of excitons within InP@ZnSeS quantum dots.

    Science.gov (United States)

    Lim, Jaehoon; Park, Myeongjin; Bae, Wan Ki; Lee, Donggu; Lee, Seonghoon; Lee, Changhee; Char, Kookheon

    2013-10-22

    We demonstrate bright, efficient, and environmentally benign InP quantum dot (QD)-based light-emitting diodes (QLEDs) through the direct charge carrier injection into QDs and the efficient radiative exciton recombination within QDs. The direct exciton formation within QDs is facilitated by an adoption of a solution-processed, thin conjugated polyelectrolyte layer, which reduces the electron injection barrier between cathode and QDs via vacuum level shift and promotes the charge carrier balance within QDs. The efficient radiative recombination of these excitons is enabled in structurally engineered InP@ZnSeS heterostructured QDs, in which excitons in the InP domain are effectively passivated by thick ZnSeS composition-gradient shells. The resulting QLEDs record 3.46% of external quantum efficiency and 3900 cd m(-2) of maximum brightness, which represent 10-fold increase in device efficiency and 5-fold increase in brightness compared with previous reports. We believe that such a comprehensive scheme in designing device architecture and the structural formulation of QDs provides a reasonable guideline for practical realization of environmentally benign, high-performance QLEDs in the future.

  9. Efficient and bright colloidal quantum dot light-emitting diodes via controlling the shell thickness of quantum dots.

    Science.gov (United States)

    Shen, Huaibin; Lin, Qinli; Wang, Hongzhe; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Zheng, Ying; Li, Lin Song

    2013-11-27

    In this paper, we use a simple device architecture based on solution-processed ZnO nanoparticles (NPs) as the electron injection/transport layer and bilayer structure of poly(ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/poly[9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine] (TFB) as the hole injection/transport layer to assess the effect of shell thickness on the properties of quantum-dot-based light emitting diodes (QD-LEDs), comprising CdSe/CdS/ZnS core-shell QDs as the emitting layer. QDs with varying shell thickness were assessed to determine the best option of shell thickness, and the best improvement in device performance was observed when the shell thickness was 2.1 nm. Thereafter, different emissions of QDs, but with optimized same shell thickness (∼2.1 nm), were selected as emitters to be fabricated into same structured QD-LEDs. Highly bright orange-red and green QD-LEDs with peak luminances up to ∼30 000 and ∼52 000 cd m(-2), and power efficiencies of 16 and 19.7 lm W(-1), respectively, were demonstrated successfully. These results may demonstrate a striking basic prototype for the commercialization of QD-based displays and solid-state lightings.

  10. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  11. Fabrication of centimeter-scale light-emitting diode with improved performance based on graphene quantum dots

    Science.gov (United States)

    Xu, Chang; Yang, Siwei; Tian, Linfan; Guo, Tianqi; Ding, Guqiao; Zhao, Jianwei; Sun, Jing; Lu, Jian; Wang, Zhongyang

    2017-03-01

    The low solubility of graphene quantum dots in organic solvents limits their application in optoelectronic devices. We propose a bottom-up synthesis approach that yields graphene quantum dots that can be dissolved in organic solvents, and we apply this approach to construct new devices. Further, by using the newly designed structure described here, a centimeter-scale emitting area and a maximum external quantum efficiency of approximately 1.2% are achieved. The method we propose provides a feasible way to develop light-emitting diodes based on graphene quantum dots for practical application.

  12. Analytical approach for type-II semiconductor spherical core-shell quantum dots heterostructures with wide band gaps

    OpenAIRE

    Cheche, Tiberius O.; Chang, Yia-Chung

    2013-01-01

    A one-band model within the effective mass approximation is adopted to characterize the energy structure and oscillator strength of type-II semiconductor spherical core-shell quantum dots. The heteroepitaxial strain of the core-shell heterostructure is modeled by the elastic continuum approach. The model is applied to ZnTe/ZnSe core-shell, a wide band gap type-II heterostructure. The simulated absorption spectra are in fair agreement with available experimental results.

  13. Polarization switching and polarization mode hopping in quantum dot vertical-cavity surface-emitting lasers.

    Science.gov (United States)

    Olejniczak, Lukasz; Panajotov, Krassimir; Thienpont, Hugo; Sciamanna, Marc; Mutig, Alex; Hopfer, Friedhelm; Bimberg, Dieter

    2011-01-31

    We show experimentally that polarization mode hopping in quantum dot vertical cavity surface emitting lasers (VCSELs) takes place between nonorthogonal elliptically polarized modes. In contrast to quantum well VCSELs the average dwell time decreases with injection current. This decrease is by 8 orders of magnitude: from seconds to nanoseconds and is achieved without any modifications of the VCSEL internal anisotropies. The observed scaling happens in a range of currents as wide as 8 times the threshold value.

  14. Solution-processed, high-performance light-emitting diodes based on quantum dots

    Science.gov (United States)

    Dai, Xingliang; Zhang, Zhenxing; Jin, Yizheng; Niu, Yuan; Cao, Hujia; Liang, Xiaoyong; Chen, Liwei; Wang, Jianpu; Peng, Xiaogang

    2014-11-01

    Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades. However, the overall performance of solution-processed LEDs--including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions--remains inferior to that of the best vacuum-deposited organic LEDs. Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm-2), and a long operational lifetime of more than 100,000 hours at 100 cd m-2, making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs. This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.

  15. Enhanced quantum-dot light-emitting diodes using gold nanorods

    Science.gov (United States)

    Cho, Nam-Kwang; Lee, Sang Moo; Song, Kigook; Kang, Seong Jun

    2015-11-01

    Plasmon-enhanced quantum-dot light-emitting diodes (QLEDs) were fabricated by inserting gold (Au) nanorods at the interface of the QLEDs. The length of the nanorods was 60 nm, which corresponds to the plasmonic absorption of wavelengths in the range of 630 to 670 nm. CdSe/ZnS quantum dots (QDs) were used as emission layers with additional hole injection, transport, and electron transport layers. The maximum emission was observed at 630 nm, which is in the range of the plasmon resonance of the Au nanorods. The QLEDs with Au nanorods showed enhanced electroluminescence properties compared to the devices without the plasmonic nano-structure. A 172% increase in electroluminescent intensity was observed due to the plasmon coupling effect. The results demonstrate a promising method for developing high-performance QLEDs.

  16. Top-emitting quantum dots light-emitting devices employing microcontact printing with electricfield-independent emission

    Science.gov (United States)

    Liu, Shihao; Liu, Wenbo; Ji, Wenyu; Yu, Jing; Zhang, Wei; Zhang, Letian; Xie, Wenfa

    2016-01-01

    Recent breakthroughs in quantum dot light-emitting devices (QD-LEDs) show their promise in the development of next-generation displays. However, the QD-LED with conventional ITO-based bottom emission structure is difficult to realize the high aperture ratio, electricfield-independent emission and flexible full-color displays. Hence, we demonstrate top-emitting QD-LEDs with dry microcontact printing quantum dot films. The top-emitting structure is proved to be able to accelerate the excitons radiative transition rate, then contributing to stable electroluminescent efficiency with a very low roll-off, and preventing spectra from shifting and broadening with the electric field increases. The results suggest potential routes towards creating high aperture ratio, wide color gamut, color-stable and flexible QD-LED displays. PMID:26932521

  17. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    Science.gov (United States)

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, Nosoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-06-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

  18. Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Tieqiang [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China)

    2016-08-08

    High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

  19. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    Science.gov (United States)

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, NoSoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-01-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. PMID:26067060

  20. Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires.

    Science.gov (United States)

    Weiss, Matthias; Kinzel, Jörg B; Schülein, Florian J R; Heigl, Michael; Rudolph, Daniel; Morkötter, Stefanie; Döblinger, Markus; Bichler, Max; Abstreiter, Gerhard; Finley, Jonathan J; Koblmüller, Gregor; Wixforth, Achim; Krenner, Hubert J

    2014-05-14

    We probe and control the optical properties of emission centers forming in radial heterostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy, and occupancy state on a nanosecond time scale. In the spectral oscillations, we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, different emission lines of a single emission center exhibit pronounced anticorrelated intensity oscillations during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the emission center to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mechanism. These simulation results quantitatively reproduce the observed switching and show that in our systems these emission centers are spatially separated from the continuum by >10.5 nm.

  1. Heterostructuring Nanocrystal Quantum Dots Toward Intentional Suppression of Blinking and Auger Recombination

    Science.gov (United States)

    Hollingsworth, Jennifer A.

    2013-01-01

    At the level of a single particle, nanocrystal quantum dots (NQDs) are observed to fluoresce intermittently or “blink.” They are also characterized by an efficient non-radiative recombination process known as Auger Recombination (AR). Recently, new approaches to NQD heterostructuring have been developed that directly impact both blinking and AR, resulting in dramatic suppression of these unwanted processes. The three successful hetero-NQD motifs are reviewed here: (1) interfacial alloying, (2) thick or “giant” shells, and (3) specific type-II electronic structures. These approaches, which rely on modifying or tuning internal NQD core/shell structures, are compared with alternative strategies for blinking suppression that rely, instead, on surface modifications or surface-mediated interactions. Finally, in each case, the unique synthetic approaches or challenges addressed that have driven the realization of novel and important functionality are discussed, along with the implications for development of a comprehensive ‘materials design’ strategy for blinking and AR-suppressed heterostructured NQDs. PMID:24062602

  2. Color-tunable light emitting diodes based on quantum dot suspension.

    Science.gov (United States)

    Luo, Zhenyue; Chen, Haiwei; Liu, Yifan; Xu, Su; Wu, Shin-Tson

    2015-04-01

    We propose a color-tunable light emitting diode (LED) consisting of a blue LED as the light source and quantum dot (QD) suspension as the color-conversion medium. The LED color temperature can be controlled by varying the liquid volume of each QD suspension with different photoluminescence colors. We simulate and optimize the light efficiency and color quality of the color-tunable LED and also fabricated a prototype to prove concept. The proposed color-tunable LED exhibits several advantages such as excellent color-rendering property, simple structure and driving mechanism, as well as high energy efficiency. Its potential applications include circadian rhythm regulation and healthy lighting.

  3. All-solution processed composite hole transport layer for quantum dot light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaoli [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Synergetic Innovation Center of Chemical Science and Engineering, Tianjin (China); Dai, Haitao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Zhao, Junliang; Wang, Shuguo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Sun, Xiaowei [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, Tangchang Road 1088, Shenzhen, Guangdong 518055 (China)

    2016-03-31

    In the present work, poly-TPD and TCTA composite hole transport layer (HTL) was employed in solution processed CdSe/ZnS quantum dot light emitting diodes (QLEDs). As the doping level of TCTA can determine the carriers transport efficiency of HTL, the proper mixing ratio of TCTA and poly-TPD should be found to optimize the performance of composite HTL for QLEDs. The doping of poly-TPD by low TCTA content can make its HOMO level lower and then reduce the energy barrier height from HTL to quantum dots (QDs), whereas the doping of poly-TPD by the concentrated TCTA results in the degraded performance of QLEDs due to its decreased hole transport mobility. By using the optimized composition with poly-TPD:TCTA (3:1) as the hole transport layer, the luminescence of the device exhibits about double enhancement compared with that of poly-TPD based device. The improvement of luminescence is mainly attributed to the lower energy barrier of hole injection. The Förster resonant energy transfer (FRET) mechanism in the devices was investigated through theoretical and experimental analysis and the results indicate that the TCTA doping makes no difference on FRET. Therefore, the charge injection mechanism dominates the improved performance of the devices. - Highlights: • Quantum dot light emitting diodes (QLEDs) were fabricated by all solution method. • The performance of QLEDs was optimized by varying the composite hole transport layer. • The blend HTL could promote hole injection by optimizing HOMO levels. • The energy transfer mechanism was analyzed by studying Förster resonant energy transfer process.

  4. Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin, E-mail: jmnan@scnu.edu.cn

    2014-10-15

    A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H{sub 2}O{sub 2}) and ammonia, the N-GQDs are synthesized through H{sub 2}O{sub 2} exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors.

  5. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures

    Science.gov (United States)

    Husberg, O.; Khartchenko, A.; As, D. J.; Vogelsang, H.; Frey, T.; Schikora, D.; Lischka, K.; Noriega, O. C.; Tabata, A.; Leite, J. R.

    2001-08-01

    We have measured photoluminescence spectra of molecular-beam-epitaxy-grown cubic GaN/InxGa1-xN/GaN double heterostructures with x between 0.09 and 0.33. We observe a luminescence peak at about 2.3-2.4 eV which is almost independent of the InGaN layer composition. High-resolution x-ray diffraction measurements revealed a pseudomorphic In-rich phase with x=0.56±0.02 embedded in the InGaN layers. Including strain effects we calculate a gap energy Eg=2.13 eV of this phase. In cubic InGaN, spontaneous polarization and strain-induced piezoelectric fields are negligible. Therefore, the observed difference between the luminescence energy and the gap of the In-rich phase is assumed to be due to the localization of excitons at quantum-dot-like structures with a size of about 15 nm.

  6. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    -photoluminescence (PL), selective PL with excitation energy below the GaAs band gap, the temperature-dependent PL, for the first time, the SML InGaAs/GaAs QD heterostructure is verified to be quantum-dot-quantum-well structure, i.e., the Indium righ QDs are embedded in a lateral quantum well (QW) with lower Indium...... are two different methods of growing self-assembled QDs. In the case of SK growth, which has been widely used for lattice mis-matched materials, such as In(Ga)As/Ga(Al)As, coherent three dimensional (3D) islands form on top of a wetting layer to relax the strain energy. However,in the case of SML...... deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate...

  7. The intersubband optical properties of a two-electron quantum dot-quantum well heterostructure

    Science.gov (United States)

    Aydin, Rasit; Tas, Hatice; Sahin, Mehmet

    2015-10-01

    In this paper, both linear and third-order nonlinear optical properties of two-electron in a semiconductor core/shell/well/shell quantum dot (QD) heterostructure for cases with and without a hydrogenic donor impurity have been investigated in a detailed manner as depending on the structure parameters. For this purpose, first, the energy eigenvalues and corresponding wave functions of the structure have been computed as a function of the layer thicknesses by means of the self-consistent solution of the Poisson and Schrodinger equations in envelope function effective mass approximation. Second, using these energy eigenvalues and their wave functions obtained from the calculations, both linear and third-order nonlinear optical properties of the multi-shell QD (MSQD) with two-electron have been determined as a function of the photon energies and shell thicknesses. Also, all procedures mentioned above have been repeated for negatively charged donor impurity (D-) located in the center of the same structure. Finally, obtained results have been presented comparatively for cases with and without the impurity.

  8. Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities

    Science.gov (United States)

    Kors, A.; Fuchs, K.; Yacob, M.; Reithmaier, J. P.; Benyoucef, M.

    2017-01-01

    Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (μ-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 μeV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting.

  9. Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels.

    Science.gov (United States)

    Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; Kamat, Prashant V

    2017-09-13

    Multinary semiconductor nanoparticles such as CuInS2, AgInS2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4-butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.

  10. Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light-Emitting Diodes.

    Science.gov (United States)

    Choi, Moon Kee; Yang, Jiwoong; Kim, Dong Chan; Dai, Zhaohe; Kim, Junhee; Seung, Hyojin; Kale, Vinayak S; Sung, Sae Jin; Park, Chong Rae; Lu, Nanshu; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2018-01-01

    Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such "see-through" displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m-2 , top: ≈30 000 cd m-2 , total: ≈73 000 cd m-2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in.-1 ) shows the potential of the full-color transparent display. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Blue Quantum Dot Light-Emitting Diodes with High Electroluminescent Efficiency.

    Science.gov (United States)

    Wang, Lishuang; Lin, Jie; Hu, Yongsheng; Guo, Xiaoyang; Lv, Ying; Tang, Zhaobing; Zhao, Jialong; Fan, Yi; Zhang, Nan; Wang, Yunjun; Liu, Xingyuan

    2017-11-08

    High-efficiency blue CdSe/ZnS quantum dots (QDs) have been synthesized for display application with emission peak over 460 nm with the purpose of reducing the harmful effect of short-wavelength light to human eyes. To reach a better charge balance, different size ZnO nanoparticles (NPs) were synthesized and electrical properties of ZnO NPs were analyzed. Quantum dot light-emitting diodes (QLEDs) based on as-prepared blue QDs and optimized ZnO NPs have been successfully fabricated. Using small-size ZnO NPs, we have obtained a maximum current efficiency (CE) of 14.1 cd A(-1) and a maximum external quantum efficiency (EQE) of 19.8% for QLEDs with an electroluminescence (EL) peak at 468 nm. To the best of our knowledge, this EQE is the highest value in comparison to the previous reports. The CIE 1931 color coordinates (0.136, 0.078) of this device are quite close to the standard (0.14, 0.08) of National Television System Committee (NTSC) 1953. The color saturation blue QLEDs show great promise for use in next-generation full-color displays.

  12. R/G/B/natural white light thin colloidal quantum dot-based light-emitting devices.

    Science.gov (United States)

    Bae, Wan Ki; Lim, Jaehoon; Lee, Donggu; Park, Myeongjin; Lee, Hyunkoo; Kwak, Jeonghun; Char, Kookheon; Lee, Changhee; Lee, Seonghoon

    2014-10-08

    Bright, low-voltage driven colloidal quantum dot (QD)-based white light-emitting devices (LEDs) with practicable device performances are enabled by the direct exciton formation within quantum-dot active layers in a hybrid device structure. Detailed device characterization reveals that white-QLEDs can be rationalized as a parallel circuit, in which different QDs are connected through the same set of electrically common organic and inorganic charge transport layers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

    Directory of Open Access Journals (Sweden)

    Fengbing Wu

    2012-01-01

    Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

  14. Imaging heterostructured quantum dots in cultured cells with epifluorescence and transmission electron microscopy

    Science.gov (United States)

    Rivera, Erin M.; Trujillo Provencio, Casilda; Steinbrueck, Andrea; Rastogi, Pawan; Dennis, Allison; Hollingsworth, Jennifer; Serrano, Elba

    2011-03-01

    Quantum dots (QDs) are semiconductor nanocrystals with extensive imaging and diagnostic capabilities, including the potential for single molecule tracking. Commercially available QDs offer distinct advantages over organic fluorophores, such as increased photostability and tunable emission spectra, but their cadmium selenide (CdSe) core raises toxicity concerns. For this reason, replacements for CdSe-based QDs have been sought that can offer equivalent optical properties. The spectral range, brightness and stability of InP QDs may comprise such a solution. To this end, LANL/CINT personnel fabricated moderately thick-shell novel InP QDs that retain brightness and emission over time in an aqueous environment. We are interested in evaluating how the composition and surface properties of these novel QDs affect their entry and sequestration within the cell. Here we use epifluorescence and transmission electron microscopy (TEM) to evaluate the structural properties of cultured Xenopus kidney cells (A6; ATCC) that were exposed either to commercially available CdSe QDs (Qtracker® 565, Invitrogen) or to heterostructured InP QDs (LANL). Epifluorescence imaging permitted assessment of the general morphology of cells labeled with fluorescent molecular probes (Alexa Fluor® ® phalloidin; Hoechst 33342), and the prevalence of QD association with cells. In contrast, TEM offered unique advantages for viewing electron dense QDs at higher resolution with regard to subcellular sequestration and compartmentalization. Preliminary results show that in the absence of targeting moieties, InP QDs (200 nM) can passively enter cells and sequester nonspecifically in cytosolic regions whereas commercially available targeted QDs principally associate with membranous structures within the cell. Supported by: NIH 5R01GM084702.

  15. Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

    Science.gov (United States)

    Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

    2017-11-01

    Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

  16. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

    Science.gov (United States)

    Hu, Yongjie; Churchill, Hugh O H; Reilly, David J; Xiang, Jie; Lieber, Charles M; Marcus, Charles M

    2007-10-01

    One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties. Here, we present a double quantum dot based on Ge/Si nanowires in which we can completely control the coupling between the dots and to the leads. We also demonstrate that charge on the double dot can be detected by coupling it capacitively to an adjacent nanowire quantum dot. The double quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit free of nuclear spin.

  17. Quantum dots and tunnel barriers in InAs/InP nanowire heterostructures: Electronic and optical properties

    Science.gov (United States)

    Niquet, Yann-Michel; Mojica, Dulce Camacho

    2008-03-01

    We compute the structural and electronic properties of ⟨111⟩-oriented InAs/InP nanowire heterostructures using Keating’s valence force field and a tight-binding model. We focus on the optical properties (exciton energies and polarization) of InAs quantum dots embedded in InP nanowires and on the height of InP and InAsP tunnel barriers embedded in InAs nanowires. We show that InAs quantum dots exhibit bright optical transitions, at variance with the highly mismatched InAs/GaAs nanowire heterostructures. The polarization of the photons is perpendicular to the nanowire for thin InAs layers but rotates parallel to the nanowire for thick enough ones, as a result of the increasing light-hole character of the exciton. As for tunnel barriers, we show that the residual strains can significantly reduce the conduction band discontinuity in thin InAsP layers. This must be taken into account in the design of nanowire tunneling devices.

  18. Dye decorated ZnO-NWs /CdS-NPs heterostructures for efficiency improvement of quantum dots sensitized solar cell

    Science.gov (United States)

    Nayeri, Fatemeh Dehghan; Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Soleimani, Ebrahim Asl; Hashemizadeh, S. A.

    2016-03-01

    High density vertically aligned ZnO nanowire was coated with CdS nanocrystals of different thicknesses by the RF magnetron sputtering process and applied as photoanode in CdS quantum dot sensitized solar cells. Field emission scanning electron microscopy (FESEM), photoluminescence, and X-Ray diffraction (XRD) were utilized to characterize the samples and study their properties. Results demonstrated that, after dye decoration co-sensitized process, the ZnO/CdS heterostructures showed an overall power conversion efficiency of 2.68%, which is 76.3% improvement over that of pristine ZnO/CdS-QDSSC. Thereby, the QDSSC was assembled with modified ZnO/CdS heterostructures by Dye exhibited high performance.

  19. Enhanced monolayer MoS{sub 2}/InP heterostructure solar cells by graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng [College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Lin, Shisheng, E-mail: shishenglin@zju.edu.cn; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang [College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Ding, Guqiao [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2016-04-18

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS{sub 2}, which results in n-type doping of MoS{sub 2}. The doping effect increases the barrier height at the MoS{sub 2}/InP heterojunction, thus the averaged power conversion efficiency of MoS{sub 2}/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS{sub 2} based heterostructure solar cells.

  20. Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure

    Science.gov (United States)

    Sengupta, S.; Kim, J. O.; Barve, A. V.; Adhikary, S.; Sharma, Y. D.; Gautam, N.; Lee, S. J.; Noh, S. K.; Chakrabarti, S.; Krishna, S.

    2012-05-01

    We have investigated optical properties and device performance of sub-monolayer quantum dots infrared photodetector with confinement enhancing (CE) barrier and compared with conventional Stranski-Krastanov quantum dots with a similar design. This quantum dots-in-a-well structure with CE barrier enables higher quantum confinement and increased absorption efficiency due to stronger overlap of wavefunctions between the ground state and the excited state. Normal incidence photoresponse peak is obtained at 7.5 μm with a detectivity of 1.2 × 1011 cm Hz1/2 W-1 and responsivity of 0.5 A/W (77 K, 0.4 V, f/2 optics). Using photoluminescence and spectral response measurements, the bandstructure of the samples were deduced semi-empirically.

  1. Recent Progress in Quantum Dot Based White Light-Emitting Devices.

    Science.gov (United States)

    Su, Liang; Zhang, Xiaoyu; Zhang, Yu; Rogach, Andrey L

    2016-08-01

    Colloidal semiconductor quantum dots (QDs) have been widely employed as components of white light-emitting diodes (WLEDs) due to their excellent optical properties (highly saturated emission color, high luminescence quantum yield) as well as thermal and chemical stability. Much effort has been devoted to realize efficient QD-based WLEDs, including the synthesis of superior luminescent nanomaterials with excellent stabilities, and the design of advanced devices structures. In this paper, after introducing photometric parameters of the contemporary QD-based WLEDs, we highlight the recent progress in these devices grouped according to three main mechanisms for white light generation: optical excitation, direct charge carrier injection, and Förster resonance energy transfer. The methods to generate white light, the design of QD emitters and QD-based devices, as well as their fabrication techniques are considered, and the key scientific and technological challenges in the QD-based WLEDs are highlighted. Novel light-emitting materials for WLEDs such as carbon-based nanoparticles are also considered.

  2. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng

    2011-05-01

    InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

  3. Improving lumen maintenance by nanopore array dispersed quantum dots for on-chip light emitting diodes

    Science.gov (United States)

    Chen, Quan; Yang, Fan; Wan, Renzhuo; Fang, Dong

    2017-12-01

    The temperature stability of quantum dots (QDs), which is crucial for integrating into high power light-emitting diodes (LEDs) in the on-chip configuration, needs to be further improved. In this letter, we report warm white LEDs, where CdSe/ZnS nanoparticles were incorporated into a porous anodic alumina (PAA) matrix with a chain structure by the self-assembly method. Experiments demonstrate that the QD concentration range in toluene solvent from 1% mg/μl to 1.2% mg/μl in combination with the PAA matrix shows the best luminous property. To verify the reliability of the as-prepared device, a comparison experiment was conducted. It indicates excellent lumen maintenance of the light source and less chromaticity coordinate shift under accelerated life testing conditions. Experiments also prove that optical depreciation was only up to 4.6% of its initial value after the 1500 h aging test at the junction temperature of 76 °C.

  4. Interactions between photoexcited NIR emitting CdHgTe quantum dots and graphene oxide

    Science.gov (United States)

    Jagtap, Amardeep M.; Varade, Vaibhav; Konkena, Bharathi; Ramesh, K. P.; Chatterjee, Abhijit; Banerjee, Arup; Pendyala, Naresh Babu; Koteswara Rao, K. S. R.

    2016-02-01

    Hydrothermally grown mercury cadmium telluride quantum dots (CdHgTe QDs) are decorated on graphene oxide (GO) sheets through physisorption. The structural change of GO through partial reduction of oxygen functional groups is observed with X-ray photoelectron spectroscopy in GO-QDs composites. Raman spectroscopy provides relatively a small change (˜1.1 times) in D/G ratio of band intensity and red shift in G band from 1606 cm-1 to 1594 cm-1 in GO-CdHgTe QDs (2.6 nm) composites, which indicates structural modification of GO network. Steady state and time resolved photoluminescence (PL) spectroscopy shows the electronic interactions between photoexcited near infrared emitting CdHgTe QDs and GO. Another interesting observation is PL quenching in the presence of GO, and it is quite effective in the case of smaller size QDs (2.6 nm) compared to the larger size QDs (4.2 nm). Thus, the observed PL quenching is attributed to the photogenerated electron transfer from QDs to GO. The photoexcited electron transfer rate decreases from 2.2 × 109 to 1.5 × 108 s-1 with increasing particle size from 2.6 to 4.2 nm. Photoconductivity measurements on QDs-GO composite devices show nearly 3 fold increase in the current density under photo-illumination, which is a promising aspect for solar energy conversion and other optoelectronic applications.

  5. Perovskite Quantum Dots and Their Application in Light-Emitting Diodes.

    Science.gov (United States)

    Wang, Hung-Chia; Bao, Zhen; Tsai, Hsin-Yu; Tang, An-Cih; Liu, Ru-Shi

    2018-01-01

    Perovskite quantum dots (PQDs) attract significant interest in recent years because of their unique optical properties, such as tunable wavelength, narrow emission, and high photoluminescence quantum efficiency (PLQY). Recent studies report new types of formamidinium (FA) PbBr3 PQDs, PQDs with organic-inorganic mixed cations, divalent cation doped colloidal CsPb1-x Mx Br3 PQDs (M = Sn2+ , Cd2+ , Zn2+ , Mn2+ ) featuring partial cation exchange, and heterovalent cation doped into PQDs (Bi3+ ). These PQD analogs open new possibilities for optoelectronic devices. For commercial applications in lighting and backlight displays, stability of PQDs requires further improvement to prevent their degradation by temperature, oxygen, moisture, and light. Oxygen and moisture-facilitated ion migration may easily etch unstable PQDs. Easy ion migration may result in crystal growth, which lowers PLQY of PQDs. Surface coating and treatment are important procedures for overcoming such factors. In this study, new types of PQDs and a strategy of improving their stabilities are introduced. Finally, this paper discusses future applications of PQDs in light-emitting diodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Fully transparent quantum dot light-emitting diode integrated with graphene anode and cathode.

    Science.gov (United States)

    Seo, Jung-Tak; Han, Junebeom; Lim, Taekyung; Lee, Ki-Heon; Hwang, Jungseek; Yang, Heesun; Ju, Sanghyun

    2014-12-23

    A fully transparent quantum dot light-emitting diode (QD-LED) was fabricated by incorporating two types (anode and cathode) of graphene-based electrodes, which were controlled in their work functions and sheet resistances. Either gold nanoparticles or silver nanowires were inserted between layers of graphene to control the work function, whereas the sheet resistance was determined by the number of graphene layers. The inserted gold nanoparticles or silver nanowires in graphene films caused a charge transfer and changed the work function to 4.9 and 4.3 eV, respectively, from the original work function (4.5 eV) of pristine graphene. Moreover the sheet resistance values for the anode and cathode electrodes were improved from ∼63,000 to ∼110 Ω/sq and from ∼100,000 to ∼741 Ω/sq as the number of graphene layers increased from 1 to 12 and from 1 to 8, respectively. The main peak wavelength, luminance, current efficiency, and optical transmittance of the fully transparent QD-LED integrated with graphene anode and cathode were 535 nm, ∼358 cd/m2, ∼0.45 cd/A, and 70-80%, respectively. The findings of the study are expected to lay a foundation for the production of high-efficiency, fully transparent, and flexible displays using graphene-based electrodes.

  7. Time-gated cell imaging using long lifetime near-infrared-emitting quantum dots for autofluorescence rejection

    Science.gov (United States)

    Bouccara, Sophie; Fragola, Alexandra; Giovanelli, Emerson; Sitbon, Gary; Lequeux, Nicolas; Pons, Thomas; Loriette, Vincent

    2014-05-01

    Fluorescence imaging is a promising technique for the detection of individual cell migration. Its sensitivity is, however, limited by a high tissue autofluorescence and a poor visible light penetration depth. In order to solve this problem, the fluorescence signal peak wavelength should lie in an absorption and diffusion free region and should be distinguishable, either spectrally or temporally, from the autofluorescence background. We present, here, the synthesis and characterization of low toxicity Zn-Cu-In-Se/ZnS core/shell quantum dots. Their fluorescence emission wavelength peaks around 800 nm, where the absorption and scattering of tissues are minimal. They are coated with a new ligand, which yields small, stable, and bright individual probes in the live cell cytoplasm, even 48 h after the labeling. Furthermore, these near-infrared-emitting quantum dots have a long fluorescence lifetime component (around 150 ns) compared to autofluorescence (advantage of this property and coupling these probes to a time-gated detection, we demonstrate efficiently the discrimination between the signal and short lifetime fluorescence such as the autofluorescence. This technique is supported by a method we developed, to massively stain cells that preserves the quantum dot stability and brightness for 48 h.

  8. Efficient vacuum-free-processed quantum dot light-emitting diodes with printable liquid metal cathodes.

    Science.gov (United States)

    Peng, Huiren; Jiang, Yibin; Chen, Shuming

    2016-10-20

    Colloidal quantum dot light-emitting diodes (QLEDs) are recognized as promising candidates for next generation displays. QLEDs can be fabricated by low-cost solution processing except for the metal electrodes, which, in general, are deposited by costly vacuum evaporation. To be fully compatible with the low-cost solution process, we herein demonstrate vacuum-free and solvent-free fabrication of electrodes using a printable liquid metal. With eutectic gallium-indium (EGaIn) based liquid metal cathodes, vacuum-free-processed QLEDs are demonstrated with superior external quantum efficiencies of 11.51%, 12.85% and 5.03% for red, green and blue devices, respectively, which are about 2-, 1.5- and 1.1-fold higher than those of the devices with thermally evaporated Al cathodes. The improved performance is attributable to the reduction of electron injection by the native oxide of EGaIn, which serves as an electron-blocking layer for the devices and thus improves the balance of carrier injection. Also, the T50 half-lifetime of the vacuum-free-processed QLEDs is about 2-fold longer than that of the devices with Al cathodes. Our results demonstrate that EGaIn-based solvent-free liquid metals are promising printable electrodes for realizing efficient, low-cost and vacuum-free-processed QLEDs. The elimination of vacuum and high-temperature processes significantly reduces the production cost and paves the way for industrial roll-to-roll manufacturing of large area displays.

  9. Investigation of Exciton Recombination Zone in Quantum Dot Light-Emitting Diodes Using a Fluorescent Probe.

    Science.gov (United States)

    Huang, Xiaoyu; Zhang, Heng; Xu, Dingxin; Wen, Feng; Chen, Shuming

    2017-08-23

    Exciton recombination zone, where the photons are generated, can greatly affect the performance, such as the efficiency and color purity, of the quantum dot (QD) light-emitting diodes (QLEDs). To probe the exciton recombination zone, 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) is doped into the charge transport layer as a fluorescent sensor; by monitoring the Förster resonant energy transfer (FRET) between QD and DCJTB, the location of the recombination zone can be determined. It is found that the electron transport layer (ETL) has a great impact on the recombination zone. For example, in QLEDs with ZnMgO ETL, the recombination zone is near the interface of the QD/hole transport layer (HTL) and is shifted to the interface of the QD/ETL as the driving voltage is increased, whereas in devices with 1,3,5-tris(2-N-phenylbenzimidazolyl) benzene (TPBi) ETL, the recombination zone is close to the interface of the QD/ETL and moved to the interface of the QD/HTL with the increase in the driving voltage. Our results can also clarify the light emission mechanism in QLEDs. In devices with ZnMgO ETL, the emission is dominated by the direct charge recombination, whereas in devices with TPBi ETL, the emission is contributed by both FRET and direct charge recombination. Our studies suggest that fluorescent probe can be a powerful tool for investigating the exciton recombination zone, light emission mechanism, and other fundamental processes in QLEDs.

  10. Fabrication of quantum dots in undoped Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using a single metal-gate layer

    Energy Technology Data Exchange (ETDEWEB)

    Lu, T. M., E-mail: tlu@sandia.gov; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

  11. Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes

    Science.gov (United States)

    Zhao, Xin; Liu, Weizhen; Chen, Rui; Gao, Yuan; Zhu, Binbin; Demir, Hilmi Volkan; Wang, Shijie; Sun, Handong

    2016-03-01

    An electrically driven quantum-dot hybrid white light-emitting diode is fabricated via spin coating CdSe quantum dots onto a GaN/ZnO nanorod matrix. For the first time, quantum dots are excited by fluorescence resonance energy transfer from the carriers trapped at surface defect levels. The prototype device exhibits achromatic emission, with a chromaticity coordinate of (0.327, 0.330), and correlated color temperature similar to sunlight.An electrically driven quantum-dot hybrid white light-emitting diode is fabricated via spin coating CdSe quantum dots onto a GaN/ZnO nanorod matrix. For the first time, quantum dots are excited by fluorescence resonance energy transfer from the carriers trapped at surface defect levels. The prototype device exhibits achromatic emission, with a chromaticity coordinate of (0.327, 0.330), and correlated color temperature similar to sunlight. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09261b

  12. Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

    DEFF Research Database (Denmark)

    Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo

    2017-01-01

    Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach...... to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA=0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining...

  13. 1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Orchard, J. [Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield S3 7RH (United Kingdom); Clarke, E. [EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)

    2015-10-12

    We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

  14. 53% Efficient Red Emissive Carbon Quantum Dots for High Color Rendering and Stable Warm White-Light-Emitting Diodes.

    Science.gov (United States)

    Wang, Zifei; Yuan, Fanglong; Li, Xiaohong; Li, Yunchao; Zhong, Haizheng; Fan, Louzhen; Yang, Shihe

    2017-10-01

    Red emissive carbon quantum dots (R-CQDs) with quantum yield of 53% is successfully prepared. An ultraviolet (UV)-pumped CQD phosphors-based warm white light-emitting diode (WLED) is realized for the first time and achieves a color rendering index of 97. This work provides a new avenue for the exploration of low cost, environment-friendly, and high-performance CQD phosphors-based warm WLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

    2012-07-23

    : Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

  16. Thermal stability of quaternary alloy (InAlGaAs)-capped InAs/GaAs multilayer quantum dot heterostructures with variation in growth rate, barrier thickness, seed quantum dot monolayer coverage, and post-growth annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, A.; Chakrabarti, S. [Indian Institute of Technology Bombay, Department of Electrical Engineering, Mumbai, Maharashtra (India); Verma, U. [Indian Institute of Technology Rajasthan, Department of Electrical Engineering, Jodhpur, Rajasthan (India)

    2013-10-15

    Strain-driven influences on the structural and optoelectronic properties of self-assembled InAs/GaAs multilayer quantum dot (MQD) heterostructures prompted our research into the growth of thermally stable MQD samples that were functional in an emission range technically favorable for communication lasers and intermediate band gap solar cells. We also studied parameter optimization by varying growth rate, capping layer thickness, seed quantum dot (QD) monolayer coverage, and post-growth annealing. A capping combination of InAlGaAs and i-GaAs was used. This combination helps in strain compensation, favors growth of multiple QD layers, functions as a strain-driven phase separation alloy, and helps increase QD stability. Photoluminescence results showed MQD sample emissions in the technologically significant range of 1.1-1.3 {mu}m. Post-growth annealing at high temperatures led to inter-diffusion of the constituent QD materials, generation of low minimum energy states, and greater carrier involvement in intermediate band gap structures, thereby showing that annealing is a suitable method for post-growth manipulation. For one MQD sample, the annealing temperature was found to affect structural and optoelectronic properties as well as the presence of intermediate energy states. Heterostructure stability at annealing temperatures up to 750 {sup circle} C was found for the other samples. Transmission electron microscopy and photoluminescence results supported these findings. (orig.)

  17. High-performance shortwave-infrared light-emitting devices using core-shell (PbS-CdS) colloidal quantum dots.

    Science.gov (United States)

    Supran, Geoffrey J; Song, Katherine W; Hwang, Gyu Weon; Correa, Raoul E; Scherer, Jennifer; Dauler, Eric A; Shirasaki, Yasuhiro; Bawendi, Moungi G; Bulović, Vladimir

    2015-02-25

    Core-shell PbS-CdS quantum dots enhance the peak external quantum efficiency of shortwave-infrared light-emitting devices by up to 50-100-fold (compared with core-only PbS devices). This is more than double the efficiency of previous quantum-dot light-emitting devices operating at wavelengths beyond 1 μm, and results from the passivation of the PbS cores by the CdS shells against in situ photoluminescence quenching. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Very High Brightness Quantum Dot Light-Emitting Devices via Enhanced Energy Transfer from a Phosphorescent Sensitizer.

    Science.gov (United States)

    Zamani Siboni, Hossein; Sadeghimakki, Bahareh; Sivoththaman, Siva; Aziz, Hany

    2015-11-25

    We demonstrate very efficient and bright quantum dot light-emitting devices (QDLEDs) with the use of a phosphorescent sensitizer and a thermal annealing step. Utilizing CdSe/CdS core/shell quantum dots with 560 nm emission peak, bis(4,6-difluorophenylpyridinatoN,C2) picolinatoiridium as a sensitizer, and thermal annealing at 50 °C for 30 min, green-emitting QDLEDs with a maximum current efficiency of 23.9 cd/A, a power efficiency of 31 lm/W, and a brightness of 65,000 cd/m(2) are demonstrated. The high efficiency and brightness are attributed to annealing-induced enhancements in both the Forster resonance energy transfer (FRET) process from the phosphorescent energy donor to the QD acceptor and hole transport across the device. The FRET enhancement is attributed to annealing-induced diffusion of the phosphorescent material molecules from the sensitizer layer into the QD layer, which results in a shorter donor-acceptor distance. We also find, quite interestingly, that FRET to a QD acceptor is strongly influenced by the QD size, and is generally less efficient to QDs with larger sizes despite their narrower bandgaps.

  19. Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device.

    Science.gov (United States)

    Kim, Daekyoung; Fu, Yan; Kim, Sunho; Lee, Woosuk; Lee, Ki-Heon; Chung, Ho Kyoon; Lee, Hoo-Jeong; Yang, Heesun; Chae, Heeyeop

    2017-02-28

    We report on an all-solution-processed fabrication of highly efficient green quantum dot-light-emitting diodes (QLEDs) with an inverted architecture, where an interfacial polymeric surface modifier of polyethylenimine ethoxylated (PEIE) is inserted between a quantum dot (QD) emitting layer (EML) and a hole transport layer (HTL), and a MoOx hole injection layer is solution deposited on top of the HTL. Among the inverted QLEDs with varied PEIE thicknesses, the device with an optimal PEIE thickness of 15.5 nm shows record maximum efficiency values of 65.3 cd/A in current efficiency and 15.6% in external quantum efficiency (EQE). All-solution-processed fabrication of inverted QLED is further implemented on a flexible platform by developing a high-performing transparent conducting composite film of ZnO nanoparticles-overcoated on Ag nanowires. The resulting flexible inverted device possesses 35.1 cd/A in current efficiency and 8.4% in EQE, which are also the highest efficiency values ever reported in flexible QLEDs.

  20. Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slab

    CERN Document Server

    Lobanov, S V; Gippius, N A; Maksimov, A A; Filatov, E V; Tartakovskii, I I; Kulakovskii, V D; Weiss, T; Schneider, C; Geßler, J; Kamp, M; Höfling, S

    2015-01-01

    Polarization properties of the emission have been investigated for quantum dots embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the waveguide layer has been shown to result in a high circular polarization degree $\\rho_c$ of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of $|\\rho_c|$ is predicted to exceed 98%. The experimentally achieved value of $|\\rho_c|=81$% is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretic...

  1. VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

    Science.gov (United States)

    Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki; Sogawa, Tetsuomi

    2012-06-13

    We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

  2. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.

    2001-01-01

    of approximate to1.8 ns is measured at room temperature, which confirms the excellent structural quality. A fast PL rise (tau (rise) = 10 +/-2 ps) is observed at all temperatures, indicating the potential for high-speed modulation. High-efficiency light-emitting diodes (LEDs) based on these dots are demonstrated......We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  3. Luminescent carbon quantum dots with high quantum yield as a single white converter for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Feng, X. T.; Zhang, Y.; Liu, X. G., E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhang, F.; Wang, Y. L.; Yang, Y. Z., E-mail: yyztyut@126.com [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China)

    2015-11-23

    Carbon quantum dots (CQDs) with high quantum yield (51.4%) were synthesized by a one-step hydrothermal method using thiosalicylic acid and ethylenediamine as precursor. The CQDs have the average diameter of 2.3 nm and possess excitation-independent emission wavelength in the range from 320 to 440 nm excitation. Under an ultraviolet (UV) excitation, the CQDs aqueous solutions emit bright blue fluorescence directly and exhibit broad emission with a high spectral component ratio of 67.4% (blue to red intensity to total intensity). We applied the CQDs as a single white-light converter for white light emitting diodes (WLEDs) using a UV-LED chip as the excitation light source. The resulted WLED shows superior performance with corresponding color temperature of 5227 K and the color coordinates of (0.34, 0.38) belonging to the white gamut.

  4. Effect of Auger Recombination on Lasing in Heterostructured Quantum Dots with Engineered Core/Shell Interfaces.

    Science.gov (United States)

    Park, Young-Shin; Bae, Wan Ki; Baker, Thomas; Lim, Jaehoon; Klimov, Victor I

    2015-11-11

    Nanocrystal quantum dots (QDs) are attractive materials for applications as laser media because of their bright, size-tunable emission and the flexibility afforded by colloidal synthesis. Nonradiative Auger recombination, however, hampers optical amplification in QDs by rapidly depleting the population of gain-active multiexciton states. In order to elucidate the role of Auger recombination in QD lasing and isolate its influence from other factors that might affect optical gain, we study two types of CdSe/CdS core/shell QDs with the same core radii and the same total sizes but different properties of the core/shell interface ("sharp" vs "smooth"). These samples exhibit distinctly different biexciton Auger lifetimes but are otherwise virtually identical. The suppression of Auger recombination in the sample with a smooth (alloyed) interface results in a notable improvement in the optical gain performance manifested in the reduction of the threshold for amplified spontaneous emission and the ability to produce dual-color lasing involving both the band-edge (1S) and the higher-energy (1P) electronic states. We develop a model, which explicitly accounts for the multiexciton nature of optical gain in QDs, and use it to analyze the competition between stimulated emission from multiexcitons and their decay via Auger recombination. These studies re-emphasize the importance of Auger recombination control for the realization of real-life QD-based lasing technologies and offer practical strategies for suppression of Auger recombination via "interface engineering" in core/shell structures.

  5. Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Le, Quyet Van [School; Kim, Jong Beom [Department; Kim, Soo Young [School; Lee, Byeongdu [X-ray; Lee, Dong Ryeol [Department

    2017-08-15

    We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using the small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting stronger quantum confinement. The cubic-phase perovskite NCs were formed despite the reaction temperatures increased from 140 to 180 °C. However, monodispersive NC cubes which are required for densely packing self-assembly film were only formed at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus, the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

  6. The performance of quantum dots-based white light-emitting diodes

    Science.gov (United States)

    Chen, Kuan-Lin; Chung, Shu-Ru

    2017-08-01

    Recently, the investigation of quantum dots (QDs) as a color converter for white light-emitting diodes (WLEDs) application has attracted a great deal of attention. Because the narrow emission wavelength of QDs can be controlled by their particle sizes and compositions, which is facilitated to improve the color gamut of display as well as color rendering index (CRI) and the correlated color temperature (CCT) of WLEDs. In a typical commercially available LCD display, the color gamut is approximately to 75 % which is defined by the National Television System Committee (NTSC). In order to enhance NTSC, the full width at half-maximum (FWHM) of color converter should be less than 30 nm. Therefore, the QDs are the best choice for display application due to the FWHM of QDs is meet the demand of display application. In this study, the hot injection method with one-pot process is used to synthesis of colloidal ternary ZnCdSe green (G-) and red-emission (R-) QDs with a narrow emission wavelength around 537 and 610 nm. By controlling the complex reagents-stearic acid (SA) and lauric acid (LA), high performance of G- and R-QDs can be prepared. The quantum yields (QYs), particle sizes and FWHM for G- and R-QDs are 70, 30 %, 3.2 +/- 0.5, 4.1 +/- 0.5 nm and 25, 26 nm, respectively. In order to explore the performance of QDs-based WLEDs, mixing ratios effect between G-QD and R-QD are studied and the WLED is packed as conformal-type. Different ratios of R-QD and G-QD (1:10, 1:20 and 1:30) are mixed and fill up the 3020 SMD blue-InGaN LED, and named as LED-10, LED-20 and LED-30. After that, UV curable gel is deposited on the top of QD layer to form WLED and named as LED-10*, LED-20* and LED-30*. The results show that the Commission International d'Eclairage (CIE) chromaticity coordinates, color rendering index (CRI), luminous efficacy of LED-10*, LED-20* and LED-30* are (0.27, 0.21), 53, 1.9 lm/W, (0.29, 0.30), 72, 3.3 lm/W and (0.25, 0.34), 45, 6.8 lm/W, respectively. We can find

  7. Highly luminescent, stable, transparent and flexible perovskite quantum dot gels towards light-emitting diodes

    Science.gov (United States)

    Sun, Chun; Shen, Xinyu; Zhang, Yu; Wang, Yu; Chen, Xingru; Ji, Changyin; Shen, Hongzhi; Shi, Hengchong; Wang, Yiding; Yu, William W.

    2017-09-01

    By controlling the hydrolysis of alkoxysilanes, highly luminescent, transparent and flexible perovskite quantum dot (QD) gels were synthesized. The gels could maintain the structure without shrinking and exhibited excellent stability comparing to the QDs in solution. This in situ fabrication can be easily scaled up for large-area/volume gels. The gels integrated the merits of the polymer matrices to avoid the non-uniformity of light output, making it convenient for practical LED applications. Monochrome and white LEDs were fabricated using these QD gels; the LEDs exhibited broader color gamut, demonstrating better property in the backlight display application.

  8. Rare-Earth Free Self-Activated Graphene Quantum Dots and Copper-Cysteamine Phosphors for Enhanced White Light-Emitting-Diodes under Single Excitation

    National Research Council Canada - National Science Library

    Wubin Dai; Yifeng Lei; Man Xu; Pei Zhao; Zhanhui Zhang; Jia Zhou

    2017-01-01

    .... On the contrary, as for phosphor-convert white light-emitting-diodes (pc-WLEDs), a solution-processed tunable warm white emission LED composite is fabricated in this study under single excitation, with both RE free phosphors graphene quantum dots (GQDs...

  9. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

    DEFF Research Database (Denmark)

    Fiore, A.; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time...

  10. Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Li, Bang; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 (China)

    2016-02-15

    The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski-Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube-root dependence on the excitation power is observed, suggesting a type-II band alignment. The peak position of dots initially red-shifts and then blue-shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Excitonic Quasimolecules Formed by Spatially Separated Electrons and Holes in a Ge/Si Heterostructure with Germanium Quantum Dots

    Science.gov (United States)

    Pokutnyi, S. I.

    2017-05-01

    It is shown that in a Ge/Si nanostructure with germanium quantum dots, two Ge quantum dots act as an excitonic quasimolecule, where the excitons (formed by spatially separated electrons and holes) are localized above the surfaces of the quantum dots. A substantial increase in binding energy is observed for the singlet ground state of the excitonic quasimolecule in the nanosystem, compared with the binding energy of a biexciton in a silicon single crystal. It is established that the major contribution to the binding energy of the quasimolecule comes from the electron-hole exchange interaction energy, which is considerably greater than the contribution from the electron-hole Coulomb interaction.

  12. Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

    Science.gov (United States)

    Kang, Byoung-Ho; Lee, Jae-Sung; Lee, Sang-Won; Kim, Sae-Wan; Lee, Jun-Woo; Gopalan, Sai-Anand; Park, Ji-Sub; Kwon, Dae-Hyuk; Bae, Jin-Hyuk; Kim, Hak-Rin; Kang, Shin-Won

    2016-01-01

    We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br-) in cetyl trimethylammonium bromide (CTAB). The Br- ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface. PMID:27686147

  13. Tunable photoluminescence of Cd free AgInS2 quantum dots: Synthesis and application for light emitting diodes

    Science.gov (United States)

    Lv, Jiufang; Liang, Xiao

    2017-10-01

    I-III-VI semiconductor quantum dots (QDs) without Cd element have attracted considerable attention in the optoelectronics device areas. Herein, we demonstrated that AgInS2 QDs with tunable photoluminescence were used for light emitting diodes (LEDs). With the increase of reaction temperature, the photoluminescence (PL) peak was monotonically red shifted from 600 to 750 nm. The temperature-dependent lifetime of the photoluminescence emission could reach to 900 ns. The successful synthesis of the AgInS2 nanocrystals with long PL lifetime provided a potential application in LEDs. The fabricated QDs LEDs exhibited a relative low turn-on voltage of 2.9 V and a maximum luminance intensity of 122 cd/m2.

  14. All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

    Directory of Open Access Journals (Sweden)

    Jiahui Li

    2016-10-01

    Full Text Available All-inorganic quantum dot light emitting diodes (QLEDs have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

  15. Fabrication of white light-emitting diodes based on solvothermally synthesized copper indium sulfide quantum dots as color converters

    Science.gov (United States)

    Song, Woo-Seuk; Yang, Heesun

    2012-04-01

    A facile, large-scalable solvothermal synthesis of copper indium sulfide (CIS) quantum dots (QDs) and their application to the fabrication of QD-based white light-emitting diodes (LEDs) are reported. Depending on CIS QD growth time of 2 versus 5 h, the core/shell structured QDs of CIS/ZnS exhibit tunable emissions of yellow-orange with excellent quantum yields of 55%-91%. A white QD-LED is realized by applying CIS (2 h)/ZnS QD as a blue-to-yellow color converter. Furthermore, a white QD-LED having a blend of yellow and orange QDs is fabricated to improve a color rendering property through spectral extension, and its electroluminescent properties are evaluated.

  16. Large Scale Synthesis and Light Emitting Fibers of Tailor-Made Graphene Quantum Dots

    Science.gov (United States)

    Park, Hun; Hyun Noh, Sung; Hye Lee, Ji; Jun Lee, Won; Yun Jaung, Jae; Geol Lee, Seung; Hee Han, Tae

    2015-09-01

    Graphene oxide (GO), which is an oxidized form of graphene, has a mixed structure consisting of graphitic crystallites of sp2 hybridized carbon and amorphous regions. In this work, we present a straightforward route for preparing graphene-based quantum dots (GQDs) by extraction of the crystallites from the amorphous matrix of the GO sheets. GQDs with controlled functionality are readily prepared by varying the reaction temperature, which results in precise tunability of their optical properties. Here, it was concluded that the tunable optical properties of GQDs are a result of the different fraction of chemical functionalities present. The synthesis approach presented in this paper provides an efficient strategy for achieving large-scale production and long-time optical stability of the GQDs, and the hybrid assembly of GQD and polymer has potential applications as photoluminescent fibers or films.

  17. Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth.

    Science.gov (United States)

    Lim, Kipil; Jang, Ho Seong; Woo, Kyoungja

    2012-12-07

    Blue (quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.

  18. Effect of defects on quantum yield in blue emitting photoluminescent nitrogen doped graphene quantum dots

    Science.gov (United States)

    Kharangarh, Poonam R.; Umapathy, Siva; Singh, Gurmeet

    2017-10-01

    This paper presents a comprehensive study of the impact of defects on quantum yield in Nitrogen doped graphene quantum dots (N-GQDs). The facile and high yielding hydrothermal method was used to process the N-GQDs by selecting two different nitrogen containing powders, that is, NH4Cl (sample-I) and (NH4)2SO4(sample-II). Initially, the synthesized samples were characterized by using High Resolution Transmission Electron Microscope (HRTEM), Powdered X-Ray Diffraction, Raman Spectroscopy, and UV-Visible spectroscopy, Fourier Transform Infrared Spectroscopy, and Photoluminescence (PL) for sample integrity. HRTEM images suggest that the majority of the both sample types were in the narrow range of 5-20 nm in diameter. The samples show blue photoluminescence and excitation dependent PL emission characteristics. As expected, by using the different excitation energy in PL, appearance of peak introduces additional energy levels between π and π* that provide alternative electron transition pathways. The most remarkable finding is that the fluorescence quantum yield is up to 28% for sample-I and is 49.8% for sample-II, which is higher than that of reported GQDs (less than 25%). This clearly suggests that the defect states related to Nitrogen, Chlorine, and Sulfur that alter the band gap of the GQDs determine the PL characteristics and the quantum yield.

  19. An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

    Science.gov (United States)

    Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

    2017-03-01

    ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

  20. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

    Science.gov (United States)

    Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

    2017-08-01

    A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

  1. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2015-06-01

    Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

  2. Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

    Science.gov (United States)

    Chen, Fei; Lin, Qingli; Wang, Hongzhe; Wang, Lei; Zhang, Fengjuan; Du, Zuliang; Shen, Huaibin; Li, Lin Song

    2016-08-01

    In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT:PSS, the optimal devices were obtained with ~22-nm-sized Au NP dopant at the concentration with an optical density (OD) of 0.21. Highly bright green QLEDs with a maximum external quantum efficiency (EQE) of 8.2 % and a current efficiency of 29.1 cd/A exhibit 80 % improvement compared with devices without Au NP dopants. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by the Au NPs and the emission band of QD layer, as well as the suppressed Auger recombination of QD layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons. These results are helpful for fabricating high-performance QD-based applications, such as full-color displays and solid-state lighting.

  3. Quantum dots light emitting devices on MEMS: microcontact printing, near-field imaging, and early cancer detection

    Science.gov (United States)

    Gopal, Ashwini; Hoshino, Kazunori; Zhang, John X. J.

    2011-08-01

    Controlled patterning of light emitting devices on semiconductors and micro-electro-mechanical systems (MEMS) enables a vast variety of applications such as structured illumination, large-area flexible displays, integrated optoelectronic systems and micro-total analysis systems for real-time biomedical screening. We have demonstrated a series of techniques of creating quantum dot-based (QD) patterned inorganic light emitting devices at room temperature on silicon (Si) substrate. The innovative technology was translated to create localized QD-based light sources for two applications: (1) Three-dimensional scanning probe tip structures for near field imaging. Combined topographic and optical images were acquired using this new class of "self-illuminating" probe in commercial NSOM. The emission wavelength can be tuned through quantum-size effect of QDs. (2) Multispectral excitation sources integrated with microfluidic channels for tumor cell analyses. We were able to detect the variation of sub-cellular features, such as the nucleus-to-cytoplasm ratio, to quantify the absorption at different wavelength upon the near-field illumination of individual tumor cells towards the determination of cancer developmental stage.

  4. How Effective is Plasmonic Enhancement of Colloidal Quantum Dots for Color-Conversion Light-Emitting Devices?

    Science.gov (United States)

    Park, Hyun Chul; Isnaeni; Gong, Suhyun; Cho, Yong-Hoon

    2017-12-01

    Enhancing the fluorescence intensity of colloidal quantum dots (QDs) in case of color-conversion type QD light-emitting devices (LEDs) is very significant due to the large loss of QDs and their quantum yields during fabrication processes, such as patterning and spin-coating, and can therefore improve cost-effectiveness. Understanding the enhancement process is crucial for the design of metallic nanostructure substrates for enhancing the fluorescence of colloidal QDs. In this work, improved color conversion of colloidal green and red QDs coupled with aluminum (Al) and silver (Ag) nanodisk (ND) arrays designed by in-depth systematic finite-difference time domain simulations of excitation, spontaneous emission, and quantum efficiency enhancement is reported. Calculated results of the overall photoluminescence enhancement factor in the substrate of 500 × 500 µm2 size are 2.37-fold and 2.82-fold for Al ND-green QD and Ag ND-red QD structures, respectively. Experimental results are in good agreement, showing 2.26-fold and 2.66-fold enhancements for Al ND and Ag ND structures. Possible uses of plasmonics in cases such as white LED and total color conversion for possible display applications are discussed. The theoretical treatments and experiments shown in this work are a proof of principle for future studies of plasmonic enhancement of various light-emitting materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mu m with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 mu m, both high-power edge emitters and low...

  6. High Color-Purity Green, Orange, and Red Light-Emitting Didoes Based on Chemically Functionalized Graphene Quantum Dots

    National Research Council Canada - National Science Library

    Kwon, Woosung; Kim, Young-Hoon; Kim, Ji-Hee; Lee, Taehyung; Do, Sungan; Park, Yoonsang; Jeong, Mun Seok; Lee, Tae-Woo; Rhee, Shi-Woo

    2016-01-01

    Chemically derived graphene quantum dots (GQDs) to date have showed very broad emission linewidth due to many kinds of chemical bondings with different energy levels, which significantly degrades the color purity and color tunability...

  7. Graphene Quantum Dot Solid Sheets: Strong blue-light-emitting & photocurrent-producing band-gap-opened nanostructures

    National Research Council Canada - National Science Library

    Ganapathi Bharathi; Devaraj Nataraj; Sellan Premkumar; Murugaiyan Sowmiya; Kittusamy Senthilkumar; T Daniel Thangadurai; Oleg Yu Khyzhun; Mukul Gupta; Deodatta Phase; Nirmalendu Patra; Shambhu Nath Jha; Dibyendu Bhattacharyya

    2017-01-01

    .... However, efforts to induce intrinsic optical properties are still in progress. Herein, we report the production of micron-sized sheets by interconnecting graphene quantum dots (GQDs), which are termed ‘GQD solid sheets...

  8. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    Science.gov (United States)

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Chuan-Feng; Guo, Guang-Can

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by Duan-Lukin-Cirac-Zoller protocol, many improved quantum-repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multi-photons (multi-photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

  9. Charge transport in light emitting devices based on colloidal quantum dots and a solution-processed nickel oxide layer.

    Science.gov (United States)

    Nguyen, Huu Tuan; Jeong, Huiseong; Park, Ji-Yong; Ahn, Y H; Lee, Soonil

    2014-05-28

    We fabricated hybrid light emitting devices based on colloidal CdSe/ZnS core/shell quantum dots and a solution-processed NiO layer. The use of a sol-gel NiO layer as a hole injection layer (HIL) resulted in overall improvement in device operation compared to a control device with a more conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) HIL. In particular, luminous efficiency increased substantially because of the suppression of excessive currents and became as large as 2.45 cd/A. To manifest the origin of current reduction, temperature- and electric field-dependent variations of currents with respect to bias voltages were investigated. In a low bias voltage range below the threshold for luminance turn-on, the Poole-Frenkel (PF) emission mechanism was responsible for the current-density variation. However, the space-charge-limited current modified with PF-type mobility ruled the current-density variation in high bias voltage range above the threshold.

  10. Realization of wide circadian variability by quantum dots-luminescent mesoporous silica-based white light-emitting diodes

    Science.gov (United States)

    Xie, Bin; Zhang, Jingjing; Chen, Wei; Hao, Junjie; Cheng, Yanhua; Hu, Run; Wu, Dan; Wang, Kai; Luo, Xiaobing

    2017-10-01

    Human comfort has become one of the most important criteria in modern lighting architecture. Here, we proposed a tuning strategy to enhance the non-image forming photobiological effect on the human circadian rhythm based on quantum-dots-converted white light-emitting diodes (QDs-WLEDs). We introduced the limiting variability of the circadian action factor (CAF), defined as the ratio of circadian efficiency and luminous efficiency of radiation. The CAF was deeply discussed and was found to be a function of constraining the color rendering index (CRI) and correlated color temperatures. The maximum CAF variability of QDs-WLEDs was found to be dependent on the QDs’ peak wavelength and full width at half maximum. With the optimized parameters, the packaging materials were synthesized and WLEDs were packaged. Experimental results show that at CRI > 90, the maximum CAF variability can be tuned by 3.83 times (from 0.251 at 2700 K to 0.961 at 6500 K), which implies that our approach could reduce the number of tunable channels, and could achieve wider CAF variability.

  11. Hydrothermal synthesis of highly luminescent blue-emitting ZnSe(S) quantum dots exhibiting low toxicity

    Energy Technology Data Exchange (ETDEWEB)

    Mirnajafizadeh, Fatemeh; Ramsey, Deborah; McAlpine, Shelli [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Wang, Fan; Reece, Peter [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Stride, John Arron, E-mail: j.stride@unsw.edu.au [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Bragg Institute, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia)

    2016-07-01

    Highly luminescent quantum dots (QDs) that emit in the visible spectrum are of interest to a number of imaging technologies, not least that of biological samples. One issue that hinders the application of luminescent markers in biology is the potential toxicity of the fluorophore. Here we show that hydrothermally synthesized ZnSe(S) QDs have low cytotoxicity to both human colorectal carcinoma cells (HCT-116) and human skin fibroblast cells (WS1). The QDs exhibited a high degree of crystallinity, with a strong blue photoluminescence at up to 29% quantum yield relative to 4′,6-diamidino-2-phenylindole (DAPI) without post-synthetic UV-irradiation. Confocal microscopy images obtained of HCT-116 cells after incubation with the QDs highlighted the stability of the particles in cell media. Cytotoxicity studies showed that both HCT-116 and WS1 cells retain 100% viability after treatment with the QDs at concentrations up to 0.5 g/L, which makes them of potential use in biological imaging applications. - Highlights: • Highly luminescent ZnSe(S) QDs were synthesized using a simple, one-step hydrothermal method. • The as-synthesized QDs were found to be nontoxic in the presence of biological cells. • The QDs were stable in biological media with identical emission profile to that in water.

  12. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    Science.gov (United States)

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

  13. Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode

    Science.gov (United States)

    Tang, Zhaobing; Lin, Jie; Wang, Lishuang; luo, Jinsong; Zhao, Jialong; Li, Haibo; Wang, Yunjun; Liu, Xingyuan

    2017-09-01

    As an indium-free transparent conducting film, Al-doped zinc oxide (AZO) was prepared by magnetron sputtering technique, exhibiting good electrical, optical and surface characteristics. UPS/XPS measurements show that AZO and zinc oxide nanoparticles (ZnO NPs) have matched energy level that can facilitate the electron injection from AZO to ZnO NPs. Inverted structural green quantum dot light-emitting diodes based on AZO cathode were fabricated, which exhibits a maximum luminance up to 178 000 cd m-2, and a maximum current efficiency of 10.1 cd A-1. Therewith, combined with the simulated space-charge-limited current (SCLC) theory, the measured current density-voltage characteristics of charge-only devices were analyzed. It demonstrated that AZO and ZnO NPs had much better electron injection efficiency than ITO, showing a electron injection efficiency close to 100%. By studying the relationship between the electric field and the current density, the measured curve of AZO-based devices nearly fits the theoretical curve of SCLC and the AZO electrode has a better ohmic contact with ZnO NPs than ITO.

  14. Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes.

    Science.gov (United States)

    Ding, Ke; Chen, Hongting; Fan, Lianwei; Wang, Bo; Huang, Zhi; Zhuang, Shaoqing; Hu, Bin; Wang, Lei

    2017-06-14

    Quantum dot (QD) light-emitting diodes (QLEDs) with an inverted architecture suffer from charge-injection imbalance and severe QD charging, which degrade device performance. Blocking excess electron injection into QDs is crucial for efficient inverted QLEDs. It is observed that polyethylenimine (PEI) has two opposite effects on electron injection: one is blocking electron injection by its intrinsic insulativity and the other one is promoting electron injection by reducing the work function of ZnO/PEI. In this work, the insulating nature of PEI has been dominantly utilized to reduce electron injection and the charge-injection balance is realized when PEI becomes thicker and blocks more excess electrons. Furthermore, PEI contributes to QD charging suppression and results in a smoother surface morphology than that of ZnO nanoparticles, which is beneficial for leakage current reduction and QD deposition. As a result, the optimized QLED with 15 nm PEI shows a 2.5 times improved efficiency compared to that of the QLED without PEI. Also, the QLED possesses the maximum external quantum efficiency and current efficiency of 16.5% and 18.8 cd/A, respectively, accompanied with a low efficiency roll-off of 15% at 1000 cd/m2, which is comparable to that of the reported inverted red QLED with the highest efficiency.

  15. Amine-Free Synthesis of Cesium Lead Halide Perovskite Quantum Dots for Efficient Light-Emitting Diodes

    KAUST Repository

    Yassitepe, Emre

    2016-10-31

    Cesium lead halide perovskite quantum dots (PQDs) have attracted significant interest for optoelectronic applications in view of their high brightness and narrow emission linewidth at visible wavelengths. A remaining challenge is the degradation of PQDs during purification from the synthesis solution. This is attributed to proton transfer between oleic acid and oleylamine surface capping agents that leads to facile ligand loss. Here, a new synthetic method is reported that enhances the colloidal stability of PQDs by capping them solely using oleic acid (OA). Quaternary alkylammonium halides are used as precursors, eliminating the need for oleylamine. This strategy enhances the colloidal stability of OA capped PQDs during purification, allowing us to remove excess organic content in thin films. Inverted red, green, and blue PQD light-emitting diodes (LED) are fabricated for the first time with solution-processed polymer-based hole transport layers due to higher robustness of OA capped PQDs to solution processing. The blue and green LEDs exhibit threefold and tenfold improved external quantum efficiency (EQE), respectively, compared to prior related reports for amine/ammonium capped cross-linked PQDs. The brightest blue LED based on all inorganic CsPb(Br1- xClx)3 PQDs is also reported. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High Color-Purity Green, Orange, and Red Light-Emitting Didoes Based on Chemically Functionalized Graphene Quantum Dots

    Science.gov (United States)

    Kwon, Woosung; Kim, Young-Hoon; Kim, Ji-Hee; Lee, Taehyung; Do, Sungan; Park, Yoonsang; Jeong, Mun Seok; Lee, Tae-Woo; Rhee, Shi-Woo

    2016-04-01

    Chemically derived graphene quantum dots (GQDs) to date have showed very broad emission linewidth due to many kinds of chemical bondings with different energy levels, which significantly degrades the color purity and color tunability. Here, we show that use of aniline derivatives to chemically functionalize GQDs generates new extrinsic energy levels that lead to photoluminescence of very narrow linewidths. We use transient absorption and time-resolved photoluminescence spectroscopies to study the electronic structures and related electronic transitions of our GQDs, which reveals that their underlying carrier dynamics is strongly related to the chemical properties of aniline derivatives. Using these functionalized GQDs as lumophores, we fabricate light-emitting didoes (LEDs) that exhibit green, orange, and red electroluminescence that has high color purity. The maximum current efficiency of 3.47 cd A-1 and external quantum efficiency of 1.28% are recorded with our LEDs; these are the highest values ever reported for LEDs based on carbon-nanoparticle phosphors. This functionalization of GQDs with aniline derivatives represents a new method to fabricate LEDs that produce natural color.

  17. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

    Science.gov (United States)

    Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-10-15

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

  18. High-Efficiency Perovskite Quantum-Dot Light-Emitting Devices by Effective Washing Process and Interfacial Energy Level Alignment.

    Science.gov (United States)

    Chiba, Takayuki; Hoshi, Keigo; Pu, Yong-Jin; Takeda, Yuya; Hayashi, Yukihiro; Ohisa, Satoru; Kawata, So; Kido, Junji

    2017-05-31

    All inorganic perovskites quantum dots (PeQDs) have attracted much attention for used in thin film display applications and solid-state lighting applications, owing to their narrow band emission with high photoluminescence quantum yields (PLQYs), color tunability, and solution processability. Here, we fabricated low-driving-voltage and high-efficiency CsPbBr3 PeQDs light-emitting devices (PeQD-LEDs) using a PeQDs washing process with an ester solvent containing butyl acetate (AcOBu) to remove excess ligands from the PeQDs. The CsPbBr3 PeQDs film washed with AcOBu exhibited a PLQY of 42%, and a narrow PL emission with a full width at half-maximum of 19 nm. We also demonstrated energy level alignment of the PeQD-LED in order to achieve effective hole injection into PeQDs from the adjacent hole injection layer. The PeQD-LED with AcOBu-washed PeQDs exhibited a maximum power efficiency of 31.7 lm W-1 and EQE of 8.73%. Control of the interfacial PeQDs through ligand removal and energy level alignment in the device structure are promising methods for obtaining high PLQYs in film state and high device efficiency.

  19. High Color-Purity Green, Orange, and Red Light-Emitting Didoes Based on Chemically Functionalized Graphene Quantum Dots

    Science.gov (United States)

    Kwon, Woosung; Kim, Young-Hoon; Kim, Ji-Hee; Lee, Taehyung; Do, Sungan; Park, Yoonsang; Jeong, Mun Seok; Lee, Tae-Woo; Rhee, Shi-Woo

    2016-01-01

    Chemically derived graphene quantum dots (GQDs) to date have showed very broad emission linewidth due to many kinds of chemical bondings with different energy levels, which significantly degrades the color purity and color tunability. Here, we show that use of aniline derivatives to chemically functionalize GQDs generates new extrinsic energy levels that lead to photoluminescence of very narrow linewidths. We use transient absorption and time-resolved photoluminescence spectroscopies to study the electronic structures and related electronic transitions of our GQDs, which reveals that their underlying carrier dynamics is strongly related to the chemical properties of aniline derivatives. Using these functionalized GQDs as lumophores, we fabricate light-emitting didoes (LEDs) that exhibit green, orange, and red electroluminescence that has high color purity. The maximum current efficiency of 3.47 cd A−1 and external quantum efficiency of 1.28% are recorded with our LEDs; these are the highest values ever reported for LEDs based on carbon-nanoparticle phosphors. This functionalization of GQDs with aniline derivatives represents a new method to fabricate LEDs that produce natural color. PMID:27048887

  20. Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer

    Science.gov (United States)

    Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

    2017-04-01

    Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

  1. Long lifetime near-infrared-emitting quantum dots for time-gated in vivo imaging of rare circulating cells (Conference Presentation)

    Science.gov (United States)

    Fragola, Alexandra; Bouccara, Sophie; Pezet, Sophie; Lequeux, Nicolas; Loriette, Vincent; Pons, Thomas

    2017-02-01

    The in vivo detection of rare circulating cells using non invasive fluorescence imaging would provide a key tool to study migration of eg. tumoral or immunological cells. Fluorescence detection is however currently limited by a lack of contrast between the small emission of isolated, fast circulating cells and the strong autofluorescence background of the surrounding tissues. We present the development of near infrared emitting quantum dots (NIR-QDs) with long fluorescence lifetime for sensitive time-gated in vivo imaging of circulating cells. These QDs are composed of low toxicity ZnCuInSe/ZnS materials and made biocompatible using a novel multidentate imidazole zwitterionic block copolymer, ensuring their long term intracellular stability. Cells of interest can thus be labeled ex vivo with QDs, injected intravenously and imaged in the near infrared range. Excitation using a pulsed laser coupled to time-gated detection enables the efficient rejection of short lifetime (≈ ns) autofluorescence background and detection of long lifetime (≈ 150 ns) fluorescence from QD-labeled cells. We demonstrate efficient in vivo imaging of single fast-flowing cells, which opens opportunities for future biological studies. [1] M. Tasso et al, "Sulfobetaine-Vinylimidazole block copolymers: a robust quantum dot surface chemistry expanding bioimaging's horizons", ACS Nano, 9(11), 2015 [2] S. Bouccara et al, "Time-gated cell imaging using long lifetime near-infrared-emitting quantum dots for autofluorescence rejection", J Biomed Optc, 19(5), 2014

  2. White Light-Emitting Diodes Based on AgInS2/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication

    OpenAIRE

    Cheng Ruan; Yu Zhang; Min Lu; Changyin Ji; Chun Sun; Xiongbin Chen; Hongda Chen; Colvin, Vicki L.; Yu, William W.

    2016-01-01

    Quantum dot white light-emitting diodes (QD-WLEDs) were fabricated from green- and red-emitting AgInS2/ZnS core/shell QDs coated on GaN LEDs. Their electroluminescence (EL) spectra were measured at different currents, ranging from 50 mA to 400 mA, and showed good color stability. The modulation bandwidth of previously prepared QD-WLEDs was confirmed to be much wider than that of YAG:Ce phosphor-based WLEDs. These results indicate that the AgInS2/ZnS core/shell QDs are good color-converting ma...

  3. Study on Scattering and Absorption Properties of Quantum-Dot-Converted Elements for Light-Emitting Diodes Using Finite-Difference Time-Domain Method.

    Science.gov (United States)

    Li, Jiasheng; Tang, Yong; Li, Zongtao; Ding, Xinrui; Yuan, Dong; Yu, Binhai

    2017-11-03

    CdSe/ZnS quantum-dot-converted elements (QDCEs) are good candidates for substituting rare-earth phosphor-converted elements (PCEs) in white light-emitting diodes (LEDs); however, studies on their scattering and absorption properties are scarce, suppressing further increment in the optical and thermal performance of quantum-dot-converted LEDs. Therefore, we introduce the finite-difference time-domain (FDTD) method to achieve the critical optical parameters of QDCEs when used in white LEDs; their scattering cross-section (coefficient), absorption cross-section (coefficient), and scattering phase distributions are presented and compared with those of traditional YAG phosphor-converted elements (PCEs) at varying particle size and concentration. At a commonly used concentration ( < 50 mg / cm 3 ), QDCEs exhibit stronger absorption (tens of millimeters, even for green-to-red-wavelength light) and weaker scattering ( < 1 mm - 1 ) compared to PCEs; the reabsorption, total internal reflection, angular uniformity, and thermal quenching would be more significant concerns for QDCEs. Therefore, the unique scattering and absorption properties of QDCEs should be considered when used in white LEDs. Furthermore, knowledge of these important optical parameters is helpful for beginning a theoretical study on quantum-dot-converted LEDs according to the ray tracing method.

  4. Study on Scattering and Absorption Properties of Quantum-Dot-Converted Elements for Light-Emitting Diodes Using Finite-Difference Time-Domain Method

    Directory of Open Access Journals (Sweden)

    Jiasheng Li

    2017-11-01

    Full Text Available CdSe/ZnS quantum-dot-converted elements (QDCEs are good candidates for substituting rare-earth phosphor-converted elements (PCEs in white light-emitting diodes (LEDs; however, studies on their scattering and absorption properties are scarce, suppressing further increment in the optical and thermal performance of quantum-dot-converted LEDs. Therefore, we introduce the finite-difference time-domain (FDTD method to achieve the critical optical parameters of QDCEs when used in white LEDs; their scattering cross-section (coefficient, absorption cross-section (coefficient, and scattering phase distributions are presented and compared with those of traditional YAG phosphor-converted elements (PCEs at varying particle size and concentration. At a commonly used concentration ( < 50 mg / cm 3 , QDCEs exhibit stronger absorption (tens of millimeters, even for green-to-red-wavelength light and weaker scattering ( < 1 mm − 1 compared to PCEs; the reabsorption, total internal reflection, angular uniformity, and thermal quenching would be more significant concerns for QDCEs. Therefore, the unique scattering and absorption properties of QDCEs should be considered when used in white LEDs. Furthermore, knowledge of these important optical parameters is helpful for beginning a theoretical study on quantum-dot-converted LEDs according to the ray tracing method.

  5. Imaging vasculature and lymphatic flow in mice using quantum dots

    DEFF Research Database (Denmark)

    Ballou, Byron; Ernst, Lauren A.; Andreko, Susan

    2009-01-01

    Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...... methods for use with commercially available quantum dots and discuss common difficulties....

  6. Soft contact transplanted nanocrystal quantum dots for light-emitting diodes: effect of surface energy on device performance.

    Science.gov (United States)

    Cho, Hyunduck; Kwak, Jeonghun; Lim, Jaehoon; Park, Myeongjin; Lee, Donggu; Bae, Wan Ki; Kim, Youn Sang; Char, Kookheon; Lee, Seonghoon; Lee, Changhee

    2015-05-27

    To realize the full-color displays using colloidal nanocrystal quantum dot (QD)-based light emitting diodes (QLEDs), the emissive QD layer should be patterned to red (R), green (G), and blue (B) subpixels on a micrometer scale by the solution process. Here, we introduced a soft contact QD-transplanting technique onto the vacuum-deposited small molecules without pressure to pattern the QD layer without any damage to the prior organic layers. We examined the patternability of QDs by studying the surface properties of various organic layers systematically. As a result, we found that the vacuum-deposited 4,4',4″-tri(N-carbazolyl)triphenylamine (TCTA) layer is suitable for QD-transplanting. A uniform and homogeneous QD patterns down to 2 μm could be formed for all the RGB QDs (CdSe/CdS/ZnS, CdSe@ZnS, and Cd1-xZnxS@ZnS, respectively) with this method. Finally, we demonstrated the R, G, and B QLEDs by transplanting each QD onto the soft TCTA layer, exhibiting higher brightness (2497, 14 102, and 265 cd m(-2), respectively) and efficiency (1.83, 8.07, and 0.19 cd A(-1), respectively) than those of the previous QLEDs fabricated by other patterning methods. Because this pressure-free technique is essential for patterning and stacking the QDs onto the soft organic layer, we believe that both fundamental study and the engineering approach presented here are meaningful for the realization of the colloidal QD-based full-color displays and other optoelectronic devices.

  7. Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

    Science.gov (United States)

    Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

    2017-11-01

    Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

  8. Sensitizing effects of ZnO quantum dots on red-emitting Pr3+-doped SiO2 phosphor

    CSIR Research Space (South Africa)

    Mbule, PS

    2012-05-01

    Full Text Available In this study, red cathodoluminescence (CL) ( emission=614 nm) was observed from Pr3+ ions in a glassy (amorphous) SiO2 host. This emission was enhanced considerably when ZnO quantum dots (QDs) were incorporated in the SiO2:Pr3+ suggesting...

  9. Rare-Earth Free Self-Activated Graphene Quantum Dots and Copper-Cysteamine Phosphors for Enhanced White Light-Emitting-Diodes under Single Excitation

    OpenAIRE

    Dai, Wubin; Lei, Yifeng; Xu, Man; Zhao, Pei; Zhang, Zhanhui; Zhou, Jia

    2017-01-01

    Rare-earth (RE) based phosphors are attractive due to their potential applications. However, owing to the resource issue, these kinds of phosphors are expensive and costly. On the contrary, as for phosphor-convert white light-emitting-diodes (pc-WLEDs), a solution-processed tunable warm white emission LED composite is fabricated in this study under single excitation, with both RE free phosphors graphene quantum dots (GQDs) and Copper-Cysteamine (Cu-Cy). By using microwave-assisted wet-chemica...

  10. All-Printable ZnO Quantum Dots/Graphene van der Waals Heterostructures for Ultrasensitive Detection of Ultraviolet Light.

    Science.gov (United States)

    Gong, Maogang; Liu, Qingfeng; Cook, Brent; Kattel, Bhupal; Wang, Ti; Chan, Wai-Lun; Ewing, Dan; Casper, Matthew; Stramel, Alex; Wu, Judy Z

    2017-04-25

    In ZnO quantum dot/graphene heterojunction photodetectors, fabricated by printing quantum dots (QDs) directly on the graphene field-effect transistor (GFET) channel, the combination of the strong quantum confinement in ZnO QDs and the high charge mobility in graphene allows extraordinary quantum efficiency (or photoconductive gain) in visible-blind ultraviolet (UV) detection. Key to the high performance is a clean van der Waals interface to facilitate an efficient charge transfer from ZnO QDs to graphene upon UV illumination. Here, we report a robust ZnO QD surface activation process and demonstrate that a transition from zero to extraordinarily high photoresponsivity of 9.9 × 10 8 A/W and a photoconductive gain of 3.6 × 10 9 can be obtained in ZnO QDs/GFET heterojunction photodetectors, as the ZnO QDs surface is systematically engineered using this process. The high figure-of-merit UV detectivity D* in exceeding 1 × 10 14 Jones represents more than 1 order of magnitude improvement over the best reported previously on ZnO nanostructure-based UV detectors. This result not only sheds light on the critical role of the van der Waals interface in affecting the optoelectronic process in ZnO QDs/GFET heterojunction photodetectors but also demonstrates the viability of printing quantum devices of high performance and low cost.

  11. Phonon-mediated versus coulombic backaction in quantum dot circuits.

    Science.gov (United States)

    Harbusch, D; Taubert, D; Tranitz, H P; Wegscheider, W; Ludwig, S

    2010-05-14

    Quantum point contacts (QPCs) are commonly employed to detect capacitively the charge state of coupled quantum dots (QDs). An indirect backaction of a biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure is observed. Energy is emitted by nonequilibrium charge carriers in the leads of the biased QPC. Part of this energy is absorbed by the double QD where it causes charge fluctuations that can be observed under certain conditions in its stability diagram. By investigating the spectrum of the absorbed energy, we find that both acoustic phonons and Coulomb interaction can be involved in the backaction, depending on the geometry and coupling constants.

  12. Liquid-type AgInS2/ZnS quantum dot-based warm white light-emitting diodes

    Science.gov (United States)

    Lu, Min; Bai, Xue; Lin, Yijun; Ji, Changyin; Wu, Hua; Ruan, Cheng; Gao, Wenzhu; Wang, Yiding; Du, Qiaoling

    2016-09-01

    We here report a warm white light-emitting diode (WLED) by employing the red-emitting liquid layer of AgInS2/ZnS quantum dots (QDs) over the yellow-emitting YAG:Ce phosphor-based WLEDs. Compared to the commercial WLEDs, our liquid-type QD-WLEDs exhibit a color temperature of 3500 K and an improved color rendering index of 85. In addition, the experimental results indicate that the liquid structure warm white light device has a higher luminous efficiency of 72.1 lm/W and a better color stability against the extended working time in comparison to the solid-type QD-WLEDs.

  13. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    Science.gov (United States)

    Lewis, Crystal S.; Liu, Haiqing; Han, Jinkyu; Wang, Lei; Yue, Shiyu; Brennan, Nicholas A.; Wong, Stanislaus S.

    2016-01-01

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature, and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Moreover, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite

  14. High Color-Purity Green, Orange, and Red Light-Emitting Didoes Based on Chemically Functionalized Graphene Quantum Dots

    OpenAIRE

    Woosung Kwon; Young-Hoon Kim; Ji-Hee Kim; Taehyung Lee; Sungan Do; Yoonsang Park; Mun Seok Jeong; Tae-Woo Lee; Shi-Woo Rhee

    2016-01-01

    Chemically derived graphene quantum dots (GQDs) to date have showed very broad emission linewidth due to many kinds of chemical bondings with different energy levels, which significantly degrades the color purity and color tunability. Here, we show that use of aniline derivatives to chemically functionalize GQDs generates new extrinsic energy levels that lead to photoluminescence of very narrow linewidths. We use transient absorption and time-resolved photoluminescence spectroscopies to study...

  15. Polarization-entangled photons from an InGaAs-based quantum dot emitting in the telecom C-band

    Science.gov (United States)

    Olbrich, Fabian; Höschele, Jonatan; Müller, Markus; Kettler, Jan; Luca Portalupi, Simone; Paul, Matthias; Jetter, Michael; Michler, Peter

    2017-09-01

    We demonstrate the emission of polarization-entangled photons from a single semiconductor quantum dot in the telecom C-band (1530 nm-1565 nm). To reach this telecommunication window, the well-established material system of InAs quantum dots embedded in InGaAs barriers is utilized with an additional insertion of an InGaAs metamorphic buffer to spectrally shift the system to the desired wavelengths. For the observation of polarization-entangled photon pairs, the biexciton-exciton cascade of a quantum dot displaying an intrinsically low fine-structure splitting is investigated by means of polarization-dependent cross-correlation measurements. A complete set of tomography measurements enables us to reconstruct the two-photon density matrix and therefore to calculate a corresponding fidelity f+ to the maximally entangled Bell state Ψ+ of 0.61 ± 0.07, a concurrence of 0.74 ± 0.11, a tangle of 0.55 ± 0.14, and a negativity of 0.63 ± 0.12, clearly proving the entanglement of the states. Finally, the development of the concurrence is studied in dependency of the post-selected time-gate of the emission events and the progression of the time-delay dependent fidelity to distinct Bell states is displayed.

  16. Silicon Quantum Dots for Quantum Information Processing

    Science.gov (United States)

    2013-11-01

    16 2.2.2 Si/SiGe Heterostructures . . . . . . . . . . . . . . . . . . . 18 2.2.3 Silicon Nanowires ...Recently, silicon MOS, silicon/silicon- germanium (Si/SiGe) heterostructures and silicon nanowire architectures have also achieved spin manipulation and...Churchill, D. J. Reilly, J. Xiang, C. M. Lieber, and C. M. Marcus. A Ge/Si heterostructure nanowire -based double quantum dot with integrated charge

  17. Controlling reabsorption effect of bi-color CdSe quantum dots-based white light-emitting diodes

    Science.gov (United States)

    Siao, Cyuan-Bin; Chung, Shu-Ru; Wang, Kuan-Wen

    2017-08-01

    The colloidal semiconductor quantum dots (QDs) have the potentials to be used in white light-emitting diode (WLED) as a down-converting component to replace incandescent lamps, because the traditional WLED composed of Y3Al5O12:Ce3+ (YAG:Ce) phosphor lack of red color emissions and shows low color quality. Among various QDs, CdSe has been extensively studied because it possesses attractive characteristics such as high quantum yields (QYs), narrow emission spectral bandwidth, as well as size-tunable optical characteristics. However, in order to enhance the color rendering index (CRI) of WLED, blending materials with different emission wavelengths has been used frequently. Unfortunately, these procedures are complex and time-consuming, and the emission energy of smaller QDs can be reabsorbed by larger QDs, resulting in decreasing the excitation intensity in yellowish-green region. Therefore, in this study, in order to decrease the reabsorption effect and to simplify the procedures, we have demonstrated a facile thermal pyrolyzed route to prepare bicolor CdSe QDs with dual-wavelengths. The emission wavelengths, particle sizes, and QYs of QDs can be tuned from 537/595 to 537/602 nm, 2.59/3.92 to 2.59/4.01 nm, and 27 to 40 %, for GR1 to 3 samples, respectively when the amount of Se precursor is decreased from 1.5 to 0.75 mmol. Meanwhile, the area ratio of green to red (Ag/Ar) in fluorescence spectra is gradually increased, due to the increase in growth rate, and decrease in nuclei formation in red emission. The GR1, GR2, and GR3 QDs are then encapsulated by convert types to form the LED, in which the QDs are deposited on the blue-emitting InGaN LED chip (λem = 450 nm). After encapsulation, the devices properties of Commission International d'Eclairage (CIE) chromaticity and Ag/Ar area ratio are (0.40, 0.24), 0.28/1, (0.40, 0.31), 0.52/1, and (0.40, 0.38), 1.02/1, respectively for GR1, GR2, and GR3. The results show that the green emission intensity are strongly

  18. Electron spin and charge in semiconductor quantum dots

    NARCIS (Netherlands)

    Elzerman, J.M.

    2004-01-01

    In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vertical quantum dots are experimentally investigated. The lateral quantum dot devices are defined in a two-dimensional electron gas (2DEG) below the surface of a GaAs/AlGaAs heterostructure, by metallic

  19. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  20. White Light-Emitting Diodes Based on AgInS2/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication

    Science.gov (United States)

    Ruan, Cheng; Zhang, Yu; Lu, Min; Ji, Changyin; Sun, Chun; Chen, Xiongbin; Chen, Hongda; Colvin, Vicki L.; Yu, William W.

    2016-01-01

    Quantum dot white light-emitting diodes (QD-WLEDs) were fabricated from green- and red-emitting AgInS2/ZnS core/shell QDs coated on GaN LEDs. Their electroluminescence (EL) spectra were measured at different currents, ranging from 50 mA to 400 mA, and showed good color stability. The modulation bandwidth of previously prepared QD-WLEDs was confirmed to be much wider than that of YAG:Ce phosphor-based WLEDs. These results indicate that the AgInS2/ZnS core/shell QDs are good color-converting materials for WLEDs and they are capable in visible light communication (VLC). PMID:28344270

  1. White Light-Emitting Diodes Based on AgInS₂/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication.

    Science.gov (United States)

    Ruan, Cheng; Zhang, Yu; Lu, Min; Ji, Changyin; Sun, Chun; Chen, Xiongbin; Chen, Hongda; Colvin, Vicki L; Yu, William W

    2016-01-08

    Quantum dot white light-emitting diodes (QD-WLEDs) were fabricated from green- and red-emitting AgInS₂/ZnS core/shell QDs coated on GaN LEDs. Their electroluminescence (EL) spectra were measured at different currents, ranging from 50 mA to 400 mA, and showed good color stability. The modulation bandwidth of previously prepared QD-WLEDs was confirmed to be much wider than that of YAG:Ce phosphor-based WLEDs. These results indicate that the AgInS₂/ZnS core/shell QDs are good color-converting materials for WLEDs and they are capable in visible light communication (VLC).

  2. White Light-Emitting Diodes Based on AgInS2/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication

    Directory of Open Access Journals (Sweden)

    Cheng Ruan

    2016-01-01

    Full Text Available Quantum dot white light-emitting diodes (QD-WLEDs were fabricated from green- and red-emitting AgInS2/ZnS core/shell QDs coated on GaN LEDs. Their electroluminescence (EL spectra were measured at different currents, ranging from 50 mA to 400 mA, and showed good color stability. The modulation bandwidth of previously prepared QD-WLEDs was confirmed to be much wider than that of YAG:Ce phosphor-based WLEDs. These results indicate that the AgInS2/ZnS core/shell QDs are good color-converting materials for WLEDs and they are capable in visible light communication (VLC.

  3. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  4. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    1999-01-01

    Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...

  5. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...

  6. MoS2 quantum dots decorated g-C3N4/Ag heterostructures for enhanced visible light photocatalytic activity

    Science.gov (United States)

    Fu, Yanhui; Liang, Wei; Guo, Jinqiu; Tang, Hua; Liu, Shuaishuai

    2018-02-01

    A novel MoS2 quantum dots (QDs) decorated g-C3N4/Ag heterostructured photocatalyst has been synthesized via a two-step method including in situ microemulsion-assisted reduction and wetness impregnation method. The obtained heterostructure photocatalyst was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy (DRS) and photoluminescence spectrosxopy (PL). The photocatalytic activity was evaluated by the degradation of methyl orange (MO) under visible-light irradiation. The MoS2 QDs decorated hybrid photocatalysts exhibited significantly enhanced photocatalytic performance. The concentration of Ag and MoS2 QDs showing the optimal photocatalytic performance was determined to be 10% and 0.3% respectively, which exceeded the photocatalytic performance of pure g-C3N4 by more than 4.7 times. Recycling experiments confirmed that the hybrid catalysts had superior cycle performance and stability. The enhanced photocatalytic activity of MoS2 QDs decorated g-C3N4/Ag hybrid photocatalysts can be mainly ascribed to enhanced visible-light absorption, the efficient separation of photogenerated charge carriers and the stronger oxidation and reduction ability through a Z-scheme system composed of g-C3N4, Ag and MoS2 QDs, in which Ag nanoparticles act as the charge separation center. The evidence of the Z-scheme photocatalytic mechanism of the composite photocatalysts was obtained from the active species trapping experiments.

  7. Strongly capacitively coupled double quantum dots in GaAs-AlGaAs heterostructures. Preparation and electrical transport; Kapazitativ stark gekoppelte Doppelquantenpunkte in GaAs-AlGaAs-Heterostrukturen. Herstellung und elektrischer Transport

    Energy Technology Data Exchange (ETDEWEB)

    Huebel, A.

    2007-11-22

    In this work, a double quantum dot system is studied whose two dots are electrically insulated from one another and contacted independently with two leads. The geometry is optimized to maximize the capacitive interaction between the dots. The samples are characterized by electrical transport measurements in a dilution refrigerator. It is then studied at different tunnel couplings how the capacitive interaction influences the electrical transport in equilibrium. Under certain conditions correlated tunnel processes can be observed. A simple model is derived that serves to understand these processes. The double quantum dot system is defined in lateral arrangement by reactive ion etching of a two-dimensional electron system located only 50 nm below the surface of a GaAs-AlGaAs heterostructure. The samples are characterized in a dilution refrigerator at 25 mK near the common pinch-off point of all four tunnel barriers. A measurement of the differential equilibrium conductances of both quantum dots as a function of two gate voltages yields a honeycomb-like charge stability diagram. The most important sample characteristic is the ratio between the interaction capacitance and the total capacitance of a single quantum dot. For the optimized sample, this ratio turns out to be larger than one third near the common pinch-off point, with a single-dot charging energy of up to 800 {mu}eV. At more positive gate voltages, the capacitances between the quantum dots and their leads increase more and more, thereby diminishing the charging energy. It is shown for the optimized sample that all capacitance coefficients except the dot-lead capacitances are constant to within considerable accuracy over several Coulomb blockade oscillations. In order to measure correlated electrical transport in equilibrium, special parameter regions are examined in which the charges of both quantum dots cannot fluctuate independently of each other. An analytical formula is derived that describes the

  8. Solution-Processed Metal-Oxide p-n Charge Generation Junction for High-Performance Inverted Quantum-Dot Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Hyo-Min; Kim, Jeonggi; Cho, Sin-Young; Jang, Jin

    2017-11-08

    We report solution-processed metal-oxide p-n junction, Li-doped CuO (Li:CuO) and Li-doped ZnO (Li:ZnO), as a charge generation junction (CGJ) in quantum-dot light-emitting diode (QLED) at reverse bias. Efficient charge generation is demonstrated in a stack of air-annealed Li:CuO and Li:ZnO layers in QLEDs. Air annealing of Li:ZnO on Li:CuO turns out to be a key process to decrease oxygen vacancy (Vo) and increase the copper (II) oxide (CuO) fraction at the Li:CuO/Li:ZnO interface for efficient charge generation. Green QLEDs incorporating Li:CuO/Li:ZnO CGJ show the maximum current and power efficiencies of 35.4 cd/A and 33.5 lm/W, respectively.

  9. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

    Science.gov (United States)

    Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

    2012-11-07

    InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

  10. Synthesis of Zn1-xCdxS:Mn/ZnS quantum dots and their application to light-emitting diodes

    Science.gov (United States)

    Kim, Jong-Uk; Lee, Myung-Hyun; Yang, Heesun

    2008-11-01

    3.6 nm sized Mn-doped Zn1-xCdxS quantum dots (QDs) with the composition (x) of 1, 0.5, 0.2 and 0 were synthesized by a reverse micelle approach. The bandgap energy of Zn1-xCdxS:Mn QDs was tuned to a higher energy by increasing the Zn content, and the actual composition of alloyed Zn1-xCdxS:Mn QDs was found to be different from the solution composition. Consecutive overcoating of the Zn1-xCdxS:Mn QD surface by a ZnS shell was done, and the core/shell structured QDs exhibited quantum yields of 14-30%, depending on the composition of the core QDs. Using CdS:Mn/ZnS QDs, orange and white light-emitting diodes (LEDs) pumped by a near-UV and blue LED chips, respectively, were fabricated and their optical properties are described.

  11. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes.

    Science.gov (United States)

    Lou, Qing; Ji, Wen-Yu; Zhao, Jia-Long; Shan, Chong-Xin

    2016-08-12

    In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m(-2) versus 699 cd m(-2)) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm(-1) versus 0.139 μS cm(-1)) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.

  12. Carrier recombination spatial transfer by reduced potential barrier causes blue/red switchable luminescence in C8 carbon quantum dots/organic hybrid light-emitting devices

    Directory of Open Access Journals (Sweden)

    Xifang Chen

    2016-04-01

    Full Text Available The underlying mechanism behind the blue/red color-switchable luminescence in the C8 carbon quantum dots (CQDs/organic hybrid light-emitting devices (LEDs is investigated. The study shows that the increasing bias alters the energy-level spatial distribution and reduces the carrier potential barrier at the CQDs/organic layer interface, resulting in transition of the carrier transport mechanism from quantum tunneling to direct injection. This causes spatial shift of carrier recombination from the organic layer to the CQDs layer with resultant transition of electroluminescence from blue to red. By contrast, the pure CQDs-based LED exhibits green–red electroluminescence stemming from recombination of injected carriers in the CQDs.

  13. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Neul; Kuroda, Takashi [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Engineering, Kyushu University, NIMS, Tsukuba 305-0044 (Japan); Liu, Xiangming; Mano, Takaaki, E-mail: mano.takaaki@nims.go.jp; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Castellano, Andrea [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Dip. di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I-20125 Milano (Italy); Sanguinetti, Stefano [Dip. di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I-20125 Milano (Italy)

    2014-04-07

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C{sub 3v} symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks.

  14. InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

    Science.gov (United States)

    Lau, Kei May; Shi, Bei; Wan, Yating; Liu, Alan Y.; Li, Qiang; Zhu, Si; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.

    2017-02-01

    Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

  15. Quantum Dots: Theory

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  16. Synthesis of quantum dots

    Science.gov (United States)

    McDaniel, Hunter

    2017-10-17

    Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

  17. Core–shell quantum dots: Properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

    2015-07-05

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

  18. Accelerating FRET between Near-Infrared Emitting Quantum Dots Using a Molecular J-Aggregate as an Exciton Bridge.

    Science.gov (United States)

    Wang, Chen; Weiss, Emily A

    2017-09-13

    Fast energy transfer (EnT) among quantum dots (QDs) with near-infrared (NIR) emission is essential for fully exploiting their light harvesting and photon downconversion (multiexciton generation) abilities. This paper demonstrates a relayed EnT mechanism that accelerates the migration of NIR excitons between PbS QDs by a factor of 20 from that of one-step EnT through a polyelectrolyte and even a factor of ∼2 from that of one-step EnT between QDs in direct contact, by employing a J-aggregate (J-agg) of a cyanine dye as an exciton bridge. The donor QDs, acceptor QDs, and J-agg are electrostatically assembled into a sandwich structure with layer-by-layer deposition. Estimates of EnT rate and yield from transient and steady-state absorption and photoluminescence spectroscopies show that the rate-limiting step in the relay is EnT from the donor QD to the J-agg, while EnT from the J-agg to the acceptor QD occurs in J-agg with more intermolecular order. This work demonstrates the viability of relayed EnT through a molecular bridge as a strategy for accelerating long-distance exciton migration in assemblies of QDs, in particular in the near-infrared.

  19. Germanium based electrostatic quantum dots: design and characterization.

    Science.gov (United States)

    Mazzeo, Giovanni; Yablonovitch, Eli; Jiang, Hong-Wen

    2010-03-01

    While the less mature Germanium technology requires an extra effort for the realization of single electron quantum dots, unique properties of Germanium rich heterostructures together with spin coherence times comparable to Silicon, can justify the development of such new technology. We report our progresses on the formation of electrostatic quantum dots in Germanium. We employ an MOS-like structure with no modulation doping already successfully proven in Silicon devices. A two level gate stack is used: the top gate is positively biased to attract electrons while the lowers gates are negatively biased to form the quantum dot and attract holes in a transistor channel, used to detect the electrons in the adjacent quantum dot. Finite Element Method simulations are used to prove the concept of this hybrid holes-transistor/electron-QD device and estimate the sensitivity of the charge detection. Preliminary characterizations of quantum dot devices built with this structure are reported.

  20. Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

    Science.gov (United States)

    Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

    2017-08-22

    Tri(pyrazolyl)phosphanes (5(R1,R2) ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA)3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA)3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor.

    Science.gov (United States)

    Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

    2013-11-29

    In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using 'greener' chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50–75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 10(3) mA cm−2 and 17.7 mW cm−2 at 8 V; it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

  2. Preparation of a photo-degradation- resistant quantum dot-polymer composite plate for use in the fabrication of a high-stability white-light-emitting diode.

    Science.gov (United States)

    Jang, Eun-Pyo; Song, Woo-Seuk; Lee, Ki-Heon; Yang, Heesun

    2013-02-01

    We report on the synthesis of highly fluorescent double-ZnS-shell-capped, yellow-emitting Cu-In-S quantum dots (QDs) with a surprisingly high quantum yield of 92%, the preparation of a free-standing QD-polymethylmethacrylate composite plate, and the application of the QD plate in the fabrication of QD-based white-light-emitting diodes (WLEDs). A free-standing QD plate with QDs embedded uniformly inside a polymeric matrix is used to fabricate a remote-type, resin-free WLED. The QD plate-based WLED displays a high luminous efficiency; however, it suffers from a significantly unstable device performance due to QD degradation upon prolonged photo-excitation. An exceptional operational stability of the QD plate-based WLED is realized by generating hybrid double layers of an organic adhesion layer and a gas barrier layer of sol-gel-derived silica, rendering the QD plate impermeable to oxygen. Our success in achieving a color converter robust against photo-degradation and applying it in the fabrication of a reliable QD-based LED is greatly encouraging as regards the development of next-generation QD-based LED lighting sources.

  3. Warm White Light Emitting Diodes with Gelatin-Coated AgInS2/ZnS Core/Shell Quantum Dots.

    Science.gov (United States)

    Kang, Xiaojiao; Yang, Yanchun; Wang, Lan; Wei, Song; Pan, Daocheng

    2015-12-23

    Cadmium-free and water-soluble AgInS2/ZnS core/shell quantum dots (QDs) with a cost of 2.5 $/g are synthesized in an electric pressure cooker. The QD powders with different Ag/In ratios exhibit bright yellow, orange, and orange-red luminescence under UV light. Their absolute photoluminescence quantum yields (PLQYs) can reach as high as 50.5, 57, and 52%, respectively. Because gelatin is used as the capping agent, the concentrated QDs/gelatin solution can be directly utilized as phosphor for the fabrication of white light-emitting diodes (LEDs) by a simple drop-drying process without the need of resin package. Warm-white LEDs are obtained by combining orange-emitting QDs with blue InGaN chip. As-fabricated warm-white LED exhibits a luminous efficacy of 39.85 lm/W, a correlated color temperature (CCT) of 2634 K and a color rendering index (CRI) of 71 at a drive current of 20 mA. Furthermore, the electroluminescence (EL) stability of LED device and thermal stability of as-prepared QDs are evaluated.

  4. Improving Charge Injection via a Blade-Coating Molybdenum Oxide Layer: Toward High-Performance Large-Area Quantum-Dot Light-Emitting Diodes.

    Science.gov (United States)

    Zeng, Qunying; Xu, Zhongwei; Zheng, Congxiu; Liu, Yang; Chen, Wei; Guo, Tailiang; Li, Fushan; Xiang, Chaoyu; Yang, Yixing; Cao, Weiran; Xie, Xiangwei; Yan, Xiaolin; Qian, Lei; Holloway, Paul H

    2018-02-21

    A solution-processed molybdenum oxide (MoO x ) as the hole injection layer (HIL) by doctor-blade coating was developed to improve the efficiency and lifetime of red-emitting quantum-dot light-emitting diodes (QD-LEDs). It has been demonstrated that by adding isopropyl alcohol into the MoO x precursor during the doctor-blade coating process, the morphology, composition, and the surface electronic structure of the MoO x HIL could be tailored. A high-quality MoO x film with optimized charge injection was obtained, based on which all-solution-processed highly efficient red-emitting QD-LEDs were realized by using a low-cost doctor-blade coating technique under ambient conditions. The red QD-LEDs exhibited the maximum current efficiency and external quantum efficiency of 16 cd/A and 15.1%, respectively. Moreover, the lifetime of red devices initializing at 100 cd/m 2 was 3236 h under ambient conditions, which is about twice as long as those with a conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) HIL. Large-area QD-LEDs with 4 in. emitting areas were fabricated with blade coating as well, which exhibit a high efficiency of 12.1 cd/A for red emissions. Our work paves a new way to the realization of efficient large-area QD-LEDs, and the processing and findings from this work can be expanded into next-generation lighting and flat-panel displays.

  5. Quantum dot molecules

    CERN Document Server

    Wu, Jiang

    2014-01-01

    This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.

  6. Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

    KAUST Repository

    Cao, Sheng

    2017-04-19

    Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

  7. Tapping the potential of trioctylphosphine (TOP) in the realization of highly luminescent blue-emitting colloidal indium phosphide (InP) quantum dots

    Science.gov (United States)

    Singh, Akanksha; Chawla, Parul; Jain, Shefali; Sharma, Shailesh Narain

    2017-06-01

    In this work, extremely small blue emitting colloidal InP-based quantum dots (size 2-5 nm) have been synthesized using trioctylphosphine (TOP) as a source of phosphorus. The method reported here is unconventional, quite rapid ( 90 min), more viable, less expensive and relatively greener as compared to other conventional methods that employ tristrimethylsilyylphosphine(P(SiMe3)3) which is scarce, expensive, flammable, highly toxic and even banned in a few countries. Highly luminescent InP QDs having bluish-green emission (λ 490 nm) can be synthesized using this method without resorting to any post-synthesis etching to tune the emission to the blue region. Besides being the source of phosphorus and the particle size regulating agent, the efficacy of TOP is further realized during synthesis via its reduction of indium salt, which aids in the formation of indium metal and then subsequently in the development of InP QDs. The PL intensity of as-synthesized InP QDs is further enhanced by growing a shell of wide band gap material, i.e. ZnS resulting in a concurrent increment in quantum yield from 25% to 38% respectively.

  8. Utilization of solvothermally grown InP/ZnS quantum dots as wavelength converters for fabrication of white light-emitting diodes.

    Science.gov (United States)

    Jang, Eun-Pyo; Yang, Heesun

    2013-09-01

    This work reports on a simple solvothermal synthesis of InP/ZnS core/shell quantum dots (QDs) using a much safer and cheaper phosphorus precursor of tris(dimethylamino)phosphine than the most popularly chosen tris(trimethylsilyl)phosphine. The band gap of InP QDs is facilely controlled by varying the solvothermal core growth time (4 vs. 6 h) with a fixed temperature of 150 degrees C, and the successive solvothermal ZnS shelling at 220 degrees C for 6 h results in green- and yellow-emtting InP/ZnS QD with emission quantum yield of 41-42%. The broad size distribution of as-synthesized InP/ZnS QDs, which appears to be inherent in the current solvothermal approach, is improved by a size-selective sorting procedure, and the emission properties of the resulting size-sorted QD fractions are investigated. To produce white emission for general lighting source, a blue light-emitting diode (LED) is combined with non-size-soroted green or yellow QDs as wavelength converters. Furthermore, the QD-LED that includes a blend of green and yellow QDs is fabricated to generate a white lighting source with an enhanced color rendering performance, and its electroluminescent properties are characterized in detail.

  9. Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes

    Science.gov (United States)

    Jang, Ilwan; Kim, Jiwan; Park, Chang Jun; Ippen, Christian; Greco, Tonino; Oh, Min Suk; Lee, Jeongno; Kim, Won Keun; Wedel, Armin; Han, Chul Jong; Park, Sung Kyu

    2015-11-01

    The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200°C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature. [Figure not available: see fulltext.

  10. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

    Science.gov (United States)

    Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

    2017-09-01

    Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

  11. Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

    Science.gov (United States)

    Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

    2016-08-01

    A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

  12. Architectural Engineering of Nanowire Network Fine Pattern for 30 μm Wide Flexible Quantum Dot Light-Emitting Diode Application.

    Science.gov (United States)

    Fang, Yunsheng; Ding, Ke; Wu, Zhicong; Chen, Hongting; Li, Wenbo; Zhao, Sheng; Zhang, Yanli; Wang, Lei; Zhou, Jun; Hu, Bin

    2016-11-22

    Replacing rigid metal oxides with flexible alternatives as a next-generation transparent conductor is important for flexible optoelectronic devices. Recently, nanowire networks have emerged as a new type of transparent conductor and have attracted wide attention because of their all-solution-based process manufacturing and excellent flexibility. However, the intrinsic percolation characteristics of the network determine that its fine pattern behavior is very different from that of continuous films, which is a critical issue for their practical application in high-resolution devices. Herein, a simple optimization approach is proposed to address this issue through the architectural engineering of the nanowire network. The aligned and random silver nanowire networks are fabricated and compared in theory and experimentally. Remarkably, network performance can be notably improved with an aligned structure, which is helpful for external quantum efficiency and the luminance of quantum dot light-emitting diodes (QLEDs) when the network is applied as the bottom-transparent electrode. More importantly, the advantage introduced by network alignment is also of benefit to fine pattern performance, even when the pattern width is narrowed to 30 μm, which leads to improved luminescent properties and lower failure rates in fine QLED strip applications. This paradigm illuminates a strategy to optimize nanowire network based transparent conductors and can promote their practical application in high-definition flexible optoelectronic devices.

  13. Rare-Earth Free Self-Activated Graphene Quantum Dots and Copper-Cysteamine Phosphors for Enhanced White Light-Emitting-Diodes under Single Excitation.

    Science.gov (United States)

    Dai, Wubin; Lei, Yifeng; Xu, Man; Zhao, Pei; Zhang, Zhanhui; Zhou, Jia

    2017-10-09

    Rare-earth (RE) based phosphors are attractive due to their potential applications. However, owing to the resource issue, these kinds of phosphors are expensive and costly. On the contrary, as for phosphor-convert white light-emitting-diodes (pc-WLEDs), a solution-processed tunable warm white emission LED composite is fabricated in this study under single excitation, with both RE free phosphors graphene quantum dots (GQDs) and Copper-Cysteamine (Cu-Cy). By using microwave-assisted wet-chemical method and with graphite as raw material, cold white fluorescence of the GQDs is obtained. Cu-Cy which shows intense photoluminescence in the red region has the structure where both the thio and amine groups connected with copper and forming cysteamine. Warm white light is achieved by mixing the two self-activated RE free phosphors at the weight ratio of 1: 1.7 under the excitation at 365 nm. The designed optimal LED device has the properties of CIE (x, y) = (0.341, 0.327), T = 4436 K, R = 87.9 EQE = 0.31%. The experimental results demonstrate that RE free phosphor(s) excited under a single chip can open up a new avenue to develop much lower device for warm WLEDs.

  14. A fast synthesis of near-infrared emitting CdTe/CdSe quantum dots with small hydrodynamic diameter for in vivo imaging probes

    Science.gov (United States)

    Hu, Dehong; Zhang, Pengfei; Gong, Ping; Lian, Shuhong; Lu, Yangyang; Gao, Duyang; Cai, Lintao

    2011-11-01

    Highly luminescent near-infrared (NIR) emitting CdTe/CdSe quantum dots (QDs) were prepared through a fast and convenient method, and a new type of multivalent polymer ligands was used as the surface substituents to prepare highly stable hydrophilic QDs with small sizes. The well-defined CdTe/CdSe QDs were characterized by transmission electron microscopy (TEM), X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy and photoluminescence (PL) spectroscopy, respectively. The as-prepared CdTe/CdSe QDs were photostable with high PL quantum yields (QYs) (up to 66% at room temperature), low toxicity to cells at experimental dosages, and the QDs' fluorescence emissions were tunable between 700 and 820 nm. Furthermore, fluorescence imaging using CdTe/CdSe QDs conjugated with the AS1411 aptamer (targeting nucleolin) probe in cancer cells was reported, and the CdTe/CdSe QDs were also successfully applied for the fluorescence imaging of living animals. Our preliminary results illustrated that the CdTe/CdSe NIR-QDs with small sizes would be an alternative probe for ultrasensitive, multicolor, and multiplex applications, especially for in vivo imaging applications.

  15. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    Science.gov (United States)

    Sun, Chun; Zhang, Yu; Wang, Yu; Liu, Wenyan; Kalytchuk, Sergii; Kershaw, Stephen V.; Zhang, Tieqiang; Zhang, Xiaoyu; Zhao, Jun; Yu, William W.; Rogach, Andrey L.

    2014-06-01

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10 mA to (0.351, 0.322) at 30 mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  16. Graphene quantum dots

    CERN Document Server

    Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

    2014-01-01

    This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

  17. Detection of CdSe quantum dot photoluminescence for security label on paper

    Science.gov (United States)

    Isnaeni, Sugiarto, Iyon Titok; Bilqis, Ratu; Suseno, Jatmiko Endro

    2016-02-01

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word 'RAHASIA'. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  18. Detection of CdSe quantum dot photoluminescence for security label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

    2016-02-08

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  19. Wearable red-green-blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing

    National Research Council Canada - National Science Library

    Choi, Moon Kee; Yang, Jiwoong; Kang, Kwanghun; Kim, Dong Chan; Choi, Changsoon; Park, Chaneui; Kim, Seok Joo; Chae, Sue In; Kim, Tae-Ho; Kim, Ji Hoon; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2015-01-01

    Deformable full-colour light-emitting diodes with ultrafine pixels are essential for wearable electronics, which requires the conformal integration on curvilinear surface as well as retina-like high-definition displays...

  20. Highly Luminescent Water-Dispersible NIR-Emitting Wurtzite CuInS2/ZnS Core/Shell Colloidal Quantum Dots

    Science.gov (United States)

    2017-01-01

    Copper indium sulfide (CIS) quantum dots (QDs) are attractive as labels for biomedical imaging, since they have large absorption coefficients across a broad spectral range, size- and composition-tunable photoluminescence from the visible to the near-infrared, and low toxicity. However, the application of NIR-emitting CIS QDs is still hindered by large size and shape dispersions and low photoluminescence quantum yields (PLQYs). In this work, we develop an efficient pathway to synthesize highly luminescent NIR-emitting wurtzite CIS/ZnS QDs, starting from template Cu2-xS nanocrystals (NCs), which are converted by topotactic partial Cu+ for In3+ exchange into CIS NCs. These NCs are subsequently used as cores for the overgrowth of ZnS shells (≤1 nm thick). The CIS/ZnS core/shell QDs exhibit PL tunability from the first to the second NIR window (750–1100 nm), with PLQYs ranging from 75% (at 820 nm) to 25% (at 1050 nm), and can be readily transferred to water upon exchange of the native ligands for mercaptoundecanoic acid. The resulting water-dispersible CIS/ZnS QDs possess good colloidal stability over at least 6 months and PLQYs ranging from 39% (at 820 nm) to 6% (at 1050 nm). These PLQYs are superior to those of commonly available water-soluble NIR-fluorophores (dyes and QDs), making the hydrophilic CIS/ZnS QDs developed in this work promising candidates for further application as NIR emitters in bioimaging. The hydrophobic CIS/ZnS QDs obtained immediately after the ZnS shelling are also attractive as fluorophores in luminescent solar concentrators. PMID:28638177

  1. Visualisation of Sentinel Lymph Node with Indium-Based near Infrared Emitting Quantum Dots in a Murine Metastatic Breast Cancer Model

    Science.gov (United States)

    Helle, Marion; Cassette, Elsa; Bezdetnaya, Lina; Pons, Thomas; Leroux, Agnès; Plénat, François; Guillemin, François; Dubertret, Benoît; Marchal, Frédéric

    2012-01-01

    Due to its non-invasiveness, high temporal resolution and lower cost, fluorescence imaging is an interesting alternative to the current method (blue dye and radiocolloid) of sentinel lymph node (SLN) mapping in breast cancer. Near-infrared (NIR) emitting cadmium-based Quantum Dots (QDs) could be used for this purpose; however, their wide application is limited because of the toxicity of heavy metals composing the core. Our recent work demonstrated that indium-based QDs exhibit a weak acute local toxicity in vivo compared to their cadmium-based counterparts. In the present study we confirmed the weak toxicity of CuInS2/ZnS QDs in different in vitro models. Further in vivo studies in healthy mice showed that In-based QDs could be visualised in SLN in a few minutes after administration with a progressive increase in fluorescence until 8 h. The quantity of indium was assessed in selected organs and tissues by inductively coupled plasma – mass spectroscopy (ICP-MS) as a function of post-injection time. QD levels decrease rapidly at the injection point in the first hours after administration with a parallel increase in the lymph nodes and to a lesser extent in the liver and spleen. In addition, we observed that 3.5% of the injected indium dose was excreted in faeces in the first 4 days, with only trace quantities in the urine. Metastatic spread to the lymph nodes may hamper its visualisation. Therefore, we further performed non-invasive fluorescence measurement of QDs in SLN in tumour-bearing mice. Metastatic status was assessed by immunohistology and molecular techniques and revealed the utmost metastatic invasion of 36% of SLN. Fluorescence signal was the same irrespective of SLN status. Thus, near-infrared emitting cadmium-free QDs could be an excellent SLN tracer. PMID:22952979

  2. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...

  3. Resonance fluorescence from a telecom-wavelength quantum dot

    CERN Document Server

    Al-Khuzheyri, R; Huwer, J; Santana, T S; Szymanska, J Skiba-; Felle, M; Ward, M B; Stevenson, R M; Farrer, I; Tanner, M G; Hadfield, R H; Ritchie, D A; Shields, A J; Gerardot, B D

    2016-01-01

    We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime--a hallmark of resonance fluorescence. The measured resonance-fluorescence spectra allow us to rule out pure dephasing as a significant decoherence mechanism in these quantum dots. Combined with numerical simulations, the experimental results provide robust characterisation of charge noise in the environment of the quantum dot. Resonant control of the quantum dot opens up new possibilities for on-demand generation of indistinguishable single photons at telecom wavelengths as well as quantum optics experiments and direct manipulation of solid-state qubits in telecom-wavelength quantum dots.

  4. Quantum dots: lasers and amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Bimberg, Dieter; Ledentsov, Nikolai [Institut fuer Festkoerperphysik, PN5-2, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 (Germany)

    2003-06-25

    Continuous wave room-temperature output power of {approx} 3 W for edge emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 {mu}m. Characteristic temperatures up to 170 K below 330 K are realized. Simultaneously, differential efficiency exceeds 80% for these devices. Lasers emitting up to 12 W at 1140-1160 nm are useful as pump sources for Tm{sup 3+}-doped fibres for frequency up-conversion to 470 nm. Both types of lasers show transparency current densities of 6 A cm{sup -2} per dot layer, {eta}{sub int} = 98% and {alpha}{sub i} around 1.5 cm{sup -1}. Long operation lifetimes (above 3000 h at 50 deg C heatsink temperature at 1.5 W CW) and improved radiation hardness as compared to quantum well (QW) devices are manifested. Cut-off frequencies of about 10 GHz at 1100 nm and 6 GHz at 1300 nm and low {alpha} factors resulting in reduced filamentation and improved M{sup 2} values in single-mode operation are realized. Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs. The breakthrough became possible due to the development of self-organized growth in QD technology. (topical review)

  5. White-light-emitting CdSe quantum dots with ''magic size'' via one-pot synthesis approach

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xinmei [School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009 (China); Department of Biological and Chemical Engineering, Guangxi University of Technology, Liuzhou, Guangxi 545006 (China); Jiang, Yang; Wang, Chun; Li, Shanying; Lan, Xinzheng; Chen, Yan [School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009 (China)

    2010-11-15

    Two stable magic-sized CdSe families were simply and reproducibly synthesized at different growth temperature via a one-pot approach, in which N-oleoylmorpholine was used as reaction medium, and cadmium acetate dehydrate and Se powder as precursors. The pure 392 family obtained by surface passivation with either lauric acid or stearic acid at 150 C exhibits strong white-light emission with a maximum quantum yield (QY) up to 27%. The broadband emission (370-680 nm), which is responsible for the white-light, is attributed to photoluminescence from both excitons and surface states. High-quality white-light emission can be stable for a long growth period (about 120 min) and at least a 2-month storage period. The high-resolution transmission electron microscopy (HRTEM) images verify the presence of the small size distribution and good crystallinity of the quantum dots (QDs) with a size range of 1.7-2.0 nm. X-ray diffraction (XRD) and selected area electron diffraction (SAED) confirm that the magic-sized CdSe QDs have a zincblende crystal structure. The energy-dispersed spectrometry (EDS) measurement indicates the as-prepared CdSe QDs have a cadmium-rich surface. The as-prepared CdSe QDs exhibit sharp and fixed absorption features and the white-light emitting from QDs can be retained for quite long reaction and storage periods. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Small Molecule Modified Hole Transport Layer Targeting Low Turn-on Voltage, Bright and Efficient Full-color Quantum Dot Light Emitting Diodes.

    Science.gov (United States)

    Li, Jingling; Liang, Zheng; Su, Qiucheng; Jin, Hu; Wang, Kelai; Xu, Gang; Xu, Xueqing

    2018-01-05

    For an organic-inorganic hybrid quantum dot light emitting diode (QD-LED), enhancing hole-injection into the emitter for charge balance is a priority to achieve efficient device performance. Aiming at this, we employ N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine (TPD) as the additional hole transport material which was mixed with the poly(9-vinlycarbazole) (PVK) to form a composite hole transport layer (HTL), or was employed to construct a TPD/PVK bilayer structure. Enabled by this TPD modification, the green QD-LED (at wavelength of 515 nm) exhibits a sub-bandgap turn-on voltage of 2.3 V as well as a highest luminance up to 56157 cd/m2. Meanwhile, such TPD modification is also beneficial to acquire efficient blue and red QD-LEDs. In particular, the EQEs for these optimized full-color QD-LEDs are 8.62%, 9.22% and 13.40%, which are 3-4 times higher than those of the pure PVK based counterparts. Revealed by the electrochemical impedance spectroscopy (EIS), the improved electroluminescent efficiency is ascribable to the reductions of recombination resistance and charge-transfer resistance. The prepared QD-LEDs surpass the EQE values achieved in previous reports, considering devices with small molecule modified HTL. This work offers a general but simple and very effective approach to realize low turn-on voltage, bright and efficient full-color QD-LEDs via this solution-processable HTL modification.

  7. Double quantum dot memristor

    Science.gov (United States)

    Li, Ying; Holloway, Gregory W.; Benjamin, Simon C.; Briggs, G. Andrew D.; Baugh, Jonathan; Mol, Jan A.

    2017-08-01

    Memristive systems are generalizations of memristors, which are resistors with memory. In this paper, we present a quantum description of quantum dot memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realizing memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e., switching of a trapped charge in the vicinity of the device. We show that quantum dot memristive systems have hysteresis current-voltage characteristics and quantum jump-induced stochastic behavior. While our experiment requires low temperatures, the same setup could, in principle, be realized with a suitable single-molecule transistor and operated at or near room temperature.

  8. Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

    OpenAIRE

    Sasakura, H.; Kumano, H.; Suemune, I.; Motohisa, J.; Kobayashi, Y.; Van Kouwen, M.; Tomioka, K.; Fukui, T.; N. Akopian; Zwiller, V.

    2009-01-01

    We report optical properties of InP/InAsP/InP nanowire quantum dots and single-photon Fourier spectroscopy of an exciton in a single InAsP quantum dot embedded in an InP nanowire. The coherent length of the time-averaged emission originating from the single InAsP QD was measured by a Mach-Zehnder interferometer inserted in the photoluminescence path. Effects of fluctuations in surrounding excess charges trapped in the InP nanowire were investigated by excitation power and energy dependencies.

  9. Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

    Science.gov (United States)

    Sasakura, H.; Kumano, H.; Suemune, I.; Motohisa, J.; Kobayashi, Y.; van Kouwen, M.; Tomioka, K.; Fukui, T.; Akopian, N.; Zwiller, V.

    2009-11-01

    We report optical properties of InP/InAsP/InP nanowire quantum dots and single-photon Fourier spectroscopy of an exciton in a single InAsP quantum dot embedded in an InP nanowire. The coherent length of the time-averaged emission originating from the single InAsP QD was measured by a Mach-Zehnder interferometer inserted in the photoluminescence path. Effects of fluctuations in surrounding excess charges trapped in the InP nanowire were investigated by excitation power and energy dependencies.

  10. Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sasakura, H; Kumano, H; Suemune, I [Research Institute for Electron Science (RIES), Hokkaido University, Sapporo 001-0021 (Japan); Motohisa, J; Kobayashi, Y; Kouwen, M van; Tomioka, K; Fukui, T [Graduate School of Information Science Technology, Hokkaido University, Sapporo 060-0814 (Japan); Akopian, N; Zwiller, V, E-mail: hirotaka@eng.hokudai.ac.j [Quantum Transport, Kavli Institute of Nanoscience, Delf University of Technology (Netherlands)

    2009-11-15

    We report optical properties of InP/InAsP/InP nanowire quantum dots and single-photon Fourier spectroscopy of an exciton in a single InAsP quantum dot embedded in an InP nanowire. The coherent length of the time-averaged emission originating from the single InAsP QD was measured by a Mach-Zehnder interferometer inserted in the photoluminescence path. Effects of fluctuations in surrounding excess charges trapped in the InP nanowire were investigated by excitation power and energy dependencies.

  11. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit

    2016-12-05

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  12. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  13. Composition and strain effects in Type I and Type II heterostructure ZnSe/Cd(Zn)S and ZnSe/Cd1-xZnxS core/shell quantum dots

    Science.gov (United States)

    Gheshlaghi, Negar; Pisheh, Hadi Sedaghat; Ünlü, Hilmi

    2017-11-01

    We investigated the effect of ternary shell alloy composition on the bandgap and diameter of core of ZnSe / Cd1 - x Znx S heterostructure core/shell quantum dots, which were synthesized by using a simple colloidal technique. Characterization by using the x-ray diffraction (XRD), transmission electron microscopy (TEM), UV-Vis absorption and fluorescence emission spectroscopic techniques indicate that (i) there is a transition of ZnSe / Cd0.6 Zn0.4 S Type-I heterostructure (electrons and holes tend to localize in core) to ZnSe / Cd0.75 Zn0.25 S quasi-Type-II heterostructures (holes tend to localized in the core and electrons are delocalized) and (ii) then after large red shift and Stock-shift in PL emission spectra but not a distinct absorption peak in UV spectra become noticeable in ZnSe/Cd0.75Zn0.25 S quasi-Type II and ZnSe/CdS Type II heterostructures (electrons are localized in core and holes are localized in shell). Furthermore, the increase of Cd:S ratio in shell alloy composition shifts the XRD peaks to lower 2θ degrees which corresponds to tensile strain in the ZnSe core. Finally, the hydrostatic interfacial strain has effect on the squeezing or stretching the capped core: A decrease of compressive force on core from ZnSe/ZnS to tensile force in ZnSe/CdS with increase in Cd:S ratio indicates that transition of compressive strain to tensile strain takes place with the transition from Type-I to II heterostructure.

  14. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  15. Chiral quantum dot based materials

    Science.gov (United States)

    Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii

    2014-05-01

    Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.

  16. Hybrid Double Quantum Dots

    DEFF Research Database (Denmark)

    Sherman, D.; Yodh, J. S.; Albrecht, S. M.

    2016-01-01

    Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density. Here, we investigate double-quantum-dot devices made from InA...... that the individual dots host weakly hybridized Majorana modes....

  17. Carbon nanotube quantum dots

    NARCIS (Netherlands)

    Sapmaz, S.

    2006-01-01

    Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small

  18. Quantum dot blueing and blinking enables fluorescence nanoscopy.

    Science.gov (United States)

    Hoyer, Patrick; Staudt, Thorsten; Engelhardt, Johann; Hell, Stefan W

    2011-01-12

    We demonstrate superresolution fluorescence imaging of cells using bioconjugated CdSe/ZnS quantum dot markers. Fluorescence blueing of quantum dot cores facilitates separation of blinking markers residing closer than the diffraction barrier. The high number of successively emitted photons enables ground state depletion microscopy followed by individual marker return with a resolving power of the size of a single dot (∼12 nm). Nanoscale imaging is feasible with a simple webcam.

  19. InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2011-01-01

    In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5...

  20. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  1. Design and Synthesis of Antiblinking and Antibleaching Quantum Dots in Multiple Colors via Wave Function Confinement.

    Science.gov (United States)

    Cao, Hujia; Ma, Junliang; Huang, Lin; Qin, Haiyan; Meng, Renyang; Li, Yang; Peng, Xiaogang

    2016-12-07

    Single-molecular spectroscopy reveals that photoluminescence (PL) of a single quantum dot blinks, randomly switching between bright and dim/dark states under constant photoexcitation, and quantum dots photobleach readily. These facts cast great doubts on potential applications of these promising emitters. After ∼20 years of efforts, synthesis of nonblinking quantum dots is still challenging, with nonblinking quantum dots only available in red-emitting window. Here we report synthesis of nonblinking quantum dots covering most part of the visible window using a new synthetic strategy, i.e., confining the excited-state wave functions of the core/shell quantum dots within the core quantum dot and its inner shells (≤ ∼5 monolayers). For the red-emitting ones, the new synthetic strategy yields nonblinking quantum dots with small sizes (∼8 nm in diameter) and improved nonblinking properties. These new nonblinking quantum dots are found to be antibleaching. Results further imply that the PL blinking and photobleaching of quantum dots are likely related to each other.

  2. Biomedical and biological applications of quantum dots.

    Science.gov (United States)

    Abbasi, Elham; Kafshdooz, Tayebeh; Bakhtiary, Mohsen; Nikzamir, Nasrin; Nikzamir, Nasim; Nikzamir, Mohammad; Mohammadian, Mozhdeh; Akbarzadeh, Abolfazl

    2016-05-01

    Quantum dots (QDs) as colloidal nanocrystalline semiconductors have exceptional photophysical properties, due to their quantum confinement effects. Depending on their sizes and chemical compositions, QDs emit different wavelengths over a broad range of the light spectrum, from visible to infrared. QDs are typically extensively used for optical applications due to their high extinction coefficient. This article reviews biomedical applications of QDs, especially the application of QDs in cell targeting, delivery, diagnostics, cancer therapy, and imaging for cancer research.

  3. High-efficiency 1.3 μm InGaAs/GaAs quantum-dot microcavity light-emitting diodes grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Todaro, M. T.; Tasco, V.; De Giorgi, M.; Martiradonna, L.; Rainò, G.; De Vittorio, M.; Passaseo, A.; Cingolani, R.

    2005-04-01

    We investigate the optical properties of quantum-dot (QD) microcavity light-emitting diodes (MCLED) operating at 1.3μm at room temperature. The active medium consists of a single layer of InGaAs quantum dots, directly grown in a GaAs matrix by metalorganic chemical vapor deposition. Electrical injected QD MCLEDs were fabricated by exploiting a hybrid technology, which employs epitaxial and oxide-based mirrors. Such technology allows us to preserve the QD properties and leads to a wider optical bandwidth of the hybrid top distributed Bragg reflector with respect to the fully epitaxial mirror, resulting in photon recycling of the overall QDs spectrum, thus improving the efficiency of the device. The devices exhibit bright electroluminescence peaked at 1.29μm, with a full width at half maximum of 10 meV. The room-temperature external quantum efficiency of such devices is 0.52%, higher than that reported in the literature for QD MCLEDs operating at 1.3μm at room temperature.

  4. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  5. Hybrid light-emitting diodes from anthracene-contained polymer and CdSe/ZnS core/shell quantum dots

    Science.gov (United States)

    Tu, Ming-Lung; Su, Yan-Kuin; Chen, Ruei-Tang

    2014-11-01

    In this paper, we added CdSe/ZnS core/shell quantum dots (QDs) into anthracene-contained polymer. The photoluminescent (PL) characteristic of polymer/QD composite film could identify the energy transitions of anthracene-contained polymer and QDs. Furthermore, the electroluminescent (EL) characteristic of hybrid LED also identifies emission peaks of blue polymer and QDs. The maximum luminescence of the device is 970 cd/m2 with 9.1 wt.% QD hybrid emitter. The maximum luminous efficiency is 2.08 cd/A for the same device.

  6. Graphene quantum dot sensitized leaf-like InVO4/BiVO4 nanostructure: a novel ternary heterostructured QD-RGO/InVO4/BiVO4 composite with enhanced visible-light photocatalytic activity.

    Science.gov (United States)

    Lin, Xue; Wang, Yushuang; Zheng, Jia; Liu, Chang; Yang, Yang; Che, Guangbo

    2015-11-28

    Leaf-like InVO4/BiVO4 nanostructures with sizes of 2-5 μm were synthesized by a simple hydrothermal method. Graphene quantum dots (QD-RGO) were then deposited onto the surfaces of the leaf-like InVO4/BiVO4 crystals through a facile deposition-precipitation technique. Under visible light irradiation (λ > 420 nm), the QD-RGO/InVO4/BiVO4 photocatalyst degraded rhodamine B (Rh B) efficiently and displayed a much higher photocatalytic activity than pure BiVO4, InVO4, RGO/InVO4, RGO/BiVO4 or an InVO4/BiVO4 hybrid. The InVO4/BiVO4 photocatalyst with 3 wt% of QD-RGO exhibited the highest photocatalytic efficiency. The quenching effects of different scavengers demonstrated that O2˙(-) played a major role in Rh B degradation. It was elucidated that the excellent photocatalytic activity of QD-RGO/InVO4/BiVO4 for the degradation of Rh B under visible light (λ > 420 nm) can be ascribed to the extended absorption in the visible light region resulting from the QD-RGO loading, the high specific surface area, and the efficient separation of photogenerated electrons and holes through the QD-RGO/InVO4/BiVO4 heterostructure.

  7. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

    Science.gov (United States)

    Golovynskyi, Sergii; Seravalli, Luca; Datsenko, Oleksandr; Kozak, Oleksii; Kondratenko, Serhiy V.; Trevisi, Giovanna; Frigeri, Paola; Gombia, Enos; Lavoryk, Sergii R.; Golovynska, Iuliia; Ohulchanskyy, Tymish Y.; Qu, Junle

    2017-10-01

    The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n +-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related to QDs and their cladding layers with the substrate-related defects and deepest grown layer. No direct substrate effects were found in the spectra of the buffer-contacted structures. However, a notable negative influence of the n +-GaAs buffer layer on the photovoltage and photoconductivity signal was observed in the InAs/InGaAs structure. Analyzing the obtained results and the performed calculations, we have been able to provide insights on the design of metamorphic QD structures, which can be useful for the development of novel efficient photonic devices.

  8. First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots

    NARCIS (Netherlands)

    Ganguli, N.; Acharya, S.; Dasgupta, I.

    2014-01-01

    We have studied the electronic structure of CdS/ZnSe coupled quantum dots, a novel heterostructure at the nanoscale. Our calculations reveal CdS/ZnSe coupled quantum dots are type II in nature where the anion p states play an important role in deciding the band offset for the highest occupied

  9. Protein-directed synthesis of NIR-emitting, tunable HgS quantum dots and their applications in metal-ion sensing.

    Science.gov (United States)

    Goswami, Nirmal; Giri, Anupam; Kar, Shantimoy; Bootharaju, Megalamane Siddaramappa; John, Robin; Xavier, Paulrajpillai Lourdu; Pradeep, Thalappil; Pal, Samir Kumar

    2012-10-22

    The development of luminescent mercury sulfide quantum dots (HgS QDs) through the bio-mineralization process has remained unexplored. Herein, a simple, two-step route for the synthesis of HgS quantum dots in bovine serum albumin (BSA) is reported. The QDs are characterized by UV-vis spectroscopy, Fourier transform infrared (FT-IR) spectroscopy, luminescence, Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), circular dichroism (CD), energy dispersive X-ray analysis (EDX), and picosecond-resolved optical spectroscopy. Formation of various sizes of QDs is observed by modifying the conditions suitably. The QDs also show tunable luminescence over the 680-800 nm spectral regions, with a quantum yield of 4-5%. The as-prepared QDs can serve as selective sensor materials for Hg(II) and Cu(II), based on selective luminescence quenching. The quenching mechanism is found to be based on Dexter energy transfer and photoinduced electron transfer for Hg(II) and Cu(II), respectively. The simple synthesis route of protein-capped HgS QDs would provide additional impetus to explore applications for these materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Quantum dots: lasers and amplifiers

    CERN Document Server

    Bimberg, D

    2003-01-01

    Continuous wave room-temperature output power of approx 3 W for edge emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mu m. Characteristic temperatures up to 170 K below 330 K are realized. Simultaneously, differential efficiency exceeds 80% for these devices. Lasers emitting up to 12 W at 1140-1160 nm are useful as pump sources for Tm sup 3 sup + -doped fibres for frequency up-conversion to 470 nm. Both types of lasers show transparency current densities of 6 A cm sup - sup 2 per dot layer, eta sub i sub n sub t = 98% and alpha sub i around 1.5 cm sup - sup 1. Long operation lifetimes (above 3000 h at 50 deg C heatsink temperature at 1.5 W CW) and improved radiation hardness as compared to quantum well (QW) devices are manifested. Cut-off frequencies of about 10 GHz at 1100 nm and 6 GHz at 1300 nm and low alpha factors resulting in reduced filamentation and improved M sup 2 values in single-mode operation are ...

  11. Imaging Electrons in Few-Electron Quantum Dots

    Science.gov (United States)

    Fallahi, P.; Hanson, M.

    2005-03-01

    Single-electron quantum dots are important candidates for quantum information processing. We have developed a new technique to image electrons inside a single-electron quantum dot in the Coulomb blockade regime, using a scanning probe microscope (SPM) at liquid He temperatures (1). A single-electron quantum dot was formed in a two-dimensional electron gas (2DEG) inside a GaAs/AlGaAs heterostructure by surface gates. Spatial images of an electron inside the dot were obtained by fixing the tip voltage and recording the dot conductance while scanning the SPM tip above the quantum dot. The images show a ring of increased conductance about the center of the dot, where the dot conductance is on the Coulomb blockade conductance peak between 0 and 1 electrons. Simulations show that this technique can be used to extract the wavefunction of electrons inside the dot if the tip perturbation is narrower than the wave function (2). A charged SPM tip promised to be a useful tool for manipulating electrons in quantum dot circuits. 1) P. Fallahi, A.C. Bleszynski, et al submitted to Nanoletters. 2) P. Fallahi, et al Proc. 27 Int. Conf. on Physics and Semiconductors (ICPS27), Flagstaff, July 26-30, 2004, in press. *This work was supported at Harvard University by DARPA DAAD19-01-1-0659 and by the NSEC, NSF PHY-01-17795, and at UCSB by QUEST NSF Science and Technology Center.

  12. Influence of carrier dynamics on the modulation bandwidth of quantum-dot based nanocavity devices

    DEFF Research Database (Denmark)

    Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper

    2010-01-01

    We theoretically investigate the modulation response of quantum-dot based nanocavity light emitting devices. For high Purcell enhancement factors, our theory predicts the possibility of decreasing the modulation bandwidth with increasing scattering rate into the lasing quantum-dot state...

  13. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun

    2015-07-15

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  14. Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Boyd, Erin E; Westervelt, Robert M [Department of Physics, Harvard University, Cambridge, MA 02138 (United States); Storm, Kristian; Samuelson, Lars, E-mail: westervelt@seas.harvard.edu [Solid State Physics/the Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2011-05-06

    We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter{approx}30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.

  15. Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

    Science.gov (United States)

    Boyd, Erin E.; Storm, Kristian; Samuelson, Lars; Westervelt, Robert M.

    2011-05-01

    We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter≈30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.

  16. Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires.

    Science.gov (United States)

    Boyd, Erin E; Storm, Kristian; Samuelson, Lars; Westervelt, Robert M

    2011-05-06

    We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter ≈ 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.

  17. A new strategy for synthesizing AgInS2 quantum dots emitting brightly in near-infrared window for in vivo imaging

    DEFF Research Database (Denmark)

    Tan, Lianjiang; Liu, Shuiping; Li, Xiaoqiang

    2015-01-01

    A new strategy for fabricating water-dispersible AgInS2 quantum dots (QDs) with bright near-infrared (NIR) emission is demonstrated. A type of multidentate polymer (MDP) was synthesized and utilized as a compact capping ligand for the AgInS2 QDs. Using silver nitrate, indium acetate and sulfur......-hydrazine hydrate complex as the precursors, MDP-capping AgInS2 QDs were synthesized in aqueous solution at room temperature. Characterization indicates that the MDP-capping AgInS2 QDs are highly photoluminescent in NIR window and possess good photostability. Also, the QDs are stable in different media and have low...... cytotoxicity. Nude mice photoluminescence imaging shows that the MDP-capping AgInS2 QDs can be well applied to in vivo imaging. These readily prepared NIR fluorescent nanocrystals have huge potential for biomedical applications....

  18. Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Yacob, M.; Reithmaier, J. P.; Benyoucef, M., E-mail: m.benyoucef@physik.uni-kassel.de [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel (Germany)

    2014-01-13

    The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 10{sup 8} cm{sup −2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.

  19. Two-photon interference using background-free quantum frequency conversion of single photons emitted by an InAs quantum dot.

    Science.gov (United States)

    Ates, Serkan; Agha, Imad; Gulinatti, Angelo; Rech, Ivan; Rakher, Matthew T; Badolato, Antonio; Srinivasan, Kartik

    2012-10-05

    We show that quantum frequency conversion (QFC) can overcome the spectral distinguishability common to inhomogeneously broadened solid-state quantum emitters. QFC is implemented by combining single photons from an InAs/GaAs quantum dot (QD) at 980 nm with a 1550 nm pump laser in a periodically poled lithium niobate (PPLN) waveguide to generate photons at 600 nm with a signal-to-background ratio exceeding 100:1. Photon correlation and two-photon interference measurements confirm that both the single photon character and wave packet interference of individual QD states are preserved during frequency conversion. Finally, we convert two spectrally separate QD transitions to the same wavelength in a single PPLN waveguide and show that the resulting field exhibits nonclassical two-photon interference.

  20. A new strategy for synthesizing AgInS₂ quantum dots emitting brightly in near-infrared window for in vivo imaging.

    Science.gov (United States)

    Tan, Lianjiang; Liu, Shuiping; Li, Xiaoqiang; Chronakis, Ioannis S; Shen, Yumei

    2015-01-01

    A new strategy for fabricating water-dispersible AgInS2 quantum dots (QDs) with bright near-infrared (NIR) emission is demonstrated. A type of multidentate polymer (MDP) was synthesized and utilized as a compact capping ligand for the AgInS2 QDs. Using silver nitrate, indium acetate and sulfur-hydrazine hydrate complex as the precursors, MDP-capping AgInS2 QDs were synthesized in aqueous solution at room temperature. Characterization indicates that the MDP-capping AgInS2 QDs are highly photoluminescent in NIR window and possess good photostability. Also, the QDs are stable in different media and have low cytotoxicity. Nude mice photoluminescence imaging shows that the MDP-capping AgInS2 QDs can be well applied to in vivo imaging. These readily prepared NIR fluorescent nanocrystals have huge potential for biomedical applications. Copyright © 2014 Elsevier B.V. All rights reserved.

  1. Efficiency vs. multi-photon contribution test for quantum dots.

    Science.gov (United States)

    Predojević, Ana; Ježek, Miroslav; Huber, Tobias; Jayakumar, Harishankar; Kauten, Thomas; Solomon, Glenn S; Filip, Radim; Weihs, Gregor

    2014-02-24

    The development of linear quantum computing within integrated circuits demands high quality semiconductor single photon sources. In particular, for a reliable single photon source it is not sufficient to have a low multi-photon component, but also to possess high efficiency. We investigate the photon statistics of the emission from a single quantum dot with a method that is able to sensitively detect the trade-off between the efficiency and the multi-photon contribution. Our measurements show, that the light emitted from the quantum dot when it is resonantly excited possess a very low multi-photon content. Additionally, we demonstrated, for the first time, the non-Gaussian nature of the quantum state emitted from a single quantum dot.

  2. Comparative Study of 1.3 and 1.5 μm Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots

    OpenAIRE

    O.A. Niasse; Ba, B.; Ndiaye, A.; F. Mbaye; A; Lo; A. Bèye; Tottereau, O

    2013-01-01

    This study presents self-assembled quantum dots structures made on GaAs substrate. The samples were grown by Molecular Beam Epitaxy (MBE) in the Stranski-Krastanow (SK) growth mode. Two types of quantum dots structures are performed under different growth conditions and are compared: the first type is composed of two structures with InAs quantum dots encapsulated with (Ga, In) (N, As) and the second one with boxes wrapped with InGaAs. The influence of encapsulation of quantum dots is highligh...

  3. TiO2/PbS/ZnS heterostructure for panchromatic quantum dot sensitized solar cells synthesized by wet chemical route

    Science.gov (United States)

    Bhat, T. S.; Mali, S. S.; Sheikh, A. D.; Korade, S. D.; Pawar, K. K.; Hong, C. K.; Kim, J. H.; Patil, P. S.

    2017-11-01

    So far we developed the efficient photoelectrodes which can harness the UV as well as the visible regime of the solar spectrum effectively. In order to exploit a maximum portion of solar spectrum, it is necessary to study the synergistic effect of a photoelectrode comprising UV and visible radiations absorbing materials. Present research work highlights the efforts to study the synchronized effect of TiO2 and PbS on the power conversion efficiency of quantum dot sensitized solar cell (QDSSC). A cascade structure of TiO2/PbS/ZnS QDSSC is achieved to enhance the photoconversion efficiency of TiO2/PbS system by incorporating a surface passivation layer of ZnS which avoids the recombination of charge carriers. A QDSSC is fabricated using a simple and cost-effective technique such as hydrothermally grown TiO2 nanorod arrays decorated with PbS and ZnS using successive ionic layer adsorption and reaction (SILAR) method. Synthesized electrode materials are characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), High resolution-transmission electron microscopy (TEM), STEM-EDS mapping, optical and solar cell performances. Phase formation of TiO2, PbS and ZnS get confirmed from the XPS study. FE-SEM images of the photoelectrode show uniform coverage of PbS QDs onto the TiO2 nanorods which increases with increasing number of SILAR cycles. The ZnS layer not only improves the charge transport but also reduces the photocorrosion of lead chalcogenides in the presence of a liquid electrolyte. Finally, the photoelectrochemical (PEC) study is carried out using an optimized photoanode comprising TiO2/PbS/ZnS assembly. Under AM 1.5G illumination the TiO2/PbS/ZnS QDSSC photoelectrode shows 4.08 mA/cm2 short circuit current density in a polysulfide electrolyte which is higher than that of a bare TiO2 nanorod array.

  4. Marvelous applications of quantum dots.

    Science.gov (United States)

    Cheki, M; Moslehi, M; Assadi, M

    2013-05-01

    Nanotechnology is developed to convert research, prevention, and treatment of cancer through the novel diagnostic imaging techniques and therapies. In particular, the imaging nanotechnology has gained substantial momentum in recent years. The main progress in nanotechnology has led to the production of novel fluorescent probes named quantum dots (QDs). Quantum dots develop a revolution in the molecular tagging processes within research, in vivo and in vitro studies. Due to unique physical and chemical features of QD probes, new possible techniques of early cancer detection and therapeutic management are being surveyed. Quantum dots have also dissolved many of the restrictions of organic fluorophores and are a talented option as a research tool. This review addresses on the present status of research, preclinical applications and also future visions of quantum dots.  

  5. Quantum dots in cell biology.

    Science.gov (United States)

    Barroso, Margarida M

    2011-03-01

    Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated transport.

  6. Quantum Dots in Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Sollner, Immo Nathanael

    of this Thesis we discuss a novel type of photonic crystal waveguide and show its applications for on-chip quantum information processing. This structure was designed for the ecient mapping of two orthogonal circular dipole transitions to dierent propagation paths of the emitted photon, i.e. exhibits chiral...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate....

  7. Synthesis, optimization and characterization of carbon quantum dots

    Science.gov (United States)

    Deshpande, Vibha

    Quantum dots are Nano-sized structures of semiconductors with unique optical properties that make them a very valuable tool in a wide range of interesting and important applications. Quantum dots can be designed to emit a particular colored light by altering their size; they are long-lived and fluoresce brightly. Consequently, they have been used extensively in biological imaging studies, where they have facilitated the observation of detailed biological processes at the molecular level. The thesis work focuses on understanding the fundamental electronic properties of low dimensional material and their Biological applications. Carbon based Quantum Dots is the main subject in our project due to their biocompatibility and novel optical properties. Here we studied the structural, luminescence, biological properties and applications of carbon based different sizes of quantum dots. Our main goal lied in the formulation of highly florescent, broad range pH and ionic-stable N/S-doped Carbon based Quantum Dots for the purpose of determining or studying Inter and intra Cellular Functions and Imaging Live Cells. The Studies also include the effect of doping carbon based Quantum Dots. Our interest also lies in using scanning probe microscopy to investigate these quantum dots. Since the carbon element is the basis of all biological materials, full carbon nanomaterial's have a lower toxicity compared with other nanomaterial's; simultaneously, the particle size of CQDs is smaller and thus more convenient to enter the cell in vivo, which makes CQDs having great potential applications in the biological fields. In addition, the surface of CQDs contains a lot of functional groups, so that it can be modified with organic, inorganic, polymer, and other substances endowing different functional properties.

  8. UV Nano-Lights - Nonlinear Quantum Dot-Plasmon Coupling

    Science.gov (United States)

    2016-06-20

    optical properties of the gold nanoparticle- ZnO quantum dot heterostructures that is dependent on the gold particle. Initial COMSOL modelling of...4 Figure 1: COMSOL model of the EM-field intensity for interaction between spherical gold nanoparticle and a truncated ZnO cone-shaped...nanocrystal. Unfortunately, COMSOL Multiphysics can only be used to simulate linear interaction of light with the hybrid. There are add ons to the model

  9. UV Nano Lights - Nonlinear Quantum Dot-Plasmon Coupling

    Science.gov (United States)

    2016-06-20

    optical properties of the gold nanoparticle- ZnO quantum dot heterostructures that is dependent on the gold particle. Initial COMSOL modelling of...4 Figure 1: COMSOL model of the EM-field intensity for interaction between spherical gold nanoparticle and a truncated ZnO cone-shaped...nanocrystal. Unfortunately, COMSOL Multiphysics can only be used to simulate linear interaction of light with the hybrid. There are add ons to the model

  10. Stability of quantum dots in live cells

    Science.gov (United States)

    Zhu, Zheng-Jiang; Yeh, Yi-Cheun; Tang, Rui; Yan, Bo; Tamayo, Joshua; Vachet, Richard W.; Rotello, Vincent M.

    2011-12-01

    Quantum dots are highly fluorescent and photostable, making them excellent tools for imaging. When using these quantum dots in cells and animals, however, intracellular biothiols (such as glutathione and cysteine) can degrade the quantum dot monolayer, compromising function. Here, we describe a label-free method to quantify the intracellular stability of monolayers on quantum dot surfaces that couples laser desorption/ionization mass spectrometry with inductively coupled plasma mass spectrometry. Using this new approach we have demonstrated that quantum dot monolayer stability is correlated with both quantum dot particle size and monolayer structure, with appropriate choice of both particle size and ligand structure required for intracellular stability.

  11. Device and Method of Scintillating Quantum Dots for Radiation Imaging

    Science.gov (United States)

    Burke, Eric R. (Inventor); DeHaven, Stanton L. (Inventor); Williams, Phillip A. (Inventor)

    2017-01-01

    A radiation imaging device includes a radiation source and a micro structured detector comprising a material defining a surface that faces the radiation source. The material includes a plurality of discreet cavities having openings in the surface. The detector also includes a plurality of quantum dots disclosed in the cavities. The quantum dots are configured to interact with radiation from the radiation source, and to emit visible photons that indicate the presence of radiation. A digital camera and optics may be used to capture images formed by the detector in response to exposure to radiation.

  12. Air-Stable, Near- to Mid-Infrared Emitting Solids of PbTe/CdTe Core-Shell Colloidal quantum dots.

    Science.gov (United States)

    Protesescu, Loredana; Zünd, Tanja; Bodnarchuk, Maryna I; Kovalenko, Maksym V

    2016-03-03

    Light emitters and detectors operating in the near- and mid-infrared spectral regions are important to many applications, such as telecommunications, high-resolution gas analysis, atmospheric pollution monitoring, medical diagnostics, and night vision. Various lead chalcogenides (binary, ternary, and quaternary alloys) in the form of quantum dots (QDs) or quantum wells provide narrow bandgap energies that cover the broad infrared region corresponding to wavelengths of 1-30 μm. Here, we report an inexpensive, all-solution-based synthesis strategy to thin-film solids consisting of 5-16 nm PbTe QDs encapsulated by CdTe shells. Colloidally synthesized PbTe QDs were first converted into core-shell PbTe/CdTe QDs, and then deposited as thin films. The subsequent fusion of the CdTe shells is achieved by ligand removal and annealing in the presence of CdCl2 . Contrary to highly unstable bare PbTe QDs, PbTe/CdTe QD solids exhibit bright and stable near- to mid-infrared emission at wavelengths of 1-3 μm, which is also retained upon prolonged storage at ambient conditions for one year. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, and light emitting diodes. The unique properties of these...

  14. High Efficiency Quantum Dot III-V Thermophotovoltaic Cell for Space Power Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, light emitting diodes and solar cells. The unique...

  15. Quantum dots for lasers, amplifiers and computing

    Energy Technology Data Exchange (ETDEWEB)

    Bimberg, Dieter [Technische Universitaet Berlin, Hardenbergstr. 36, 10623, Berlin (Germany)

    2005-07-07

    For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s{sup -1} at room temperature is demonstrated, at 10 Gb s{sup -1} the bit error rate is below 10{sup -12} at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 {mu}m. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 {mu}m, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot semiconductor optical amplifier (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm*QD-layer) providing us with novel types of booster amplifiers and Mach-Zehnder interferometers. These breakthroughs became possible due to systematic development of self-organized growth technologies.

  16. Near-Infrared Emitting PbS Quantum Dots for in Vivo Fluorescence Imaging of the Thrombotic State in Septic Mouse Brain

    Directory of Open Access Journals (Sweden)

    Yukio Imamura

    2016-08-01

    Full Text Available Near-infrared (NIR fluorescent imaging is a powerful tool for the non-invasive visualization of the inner structure of living organisms. Recently, NIR fluorescence imaging at 1000–1400 nm (second optical window has been shown to offer better spatial resolution compared with conventional NIR fluorescence imaging at 700–900 nm (first optical window. Here we report lead sulfide (PbS quantum dots (QDs and their use for in vivo NIR fluorescence imaging of cerebral venous thrombosis in septic mice. Highly fluorescent PbS QDs with a 1100 nm emission peak (QD1100 were prepared from lead acetate and hexamethyldisilathiane, and the surface of QD1100 was coated with mercaptoundecanoic acid so as to be soluble in water. NIR fluorescence imaging of the cerebral vessels of living mice was performed after intravascular injection (200–300 μL of QD1100 (3 μM from a caudal vein. By detecting the NIR fluorescence of QD1100, we achieved non-invasive NIR fluorescence imaging of cerebral blood vessels through the scalp and skull. We also achieved NIR fluorescence imaging of cerebral venous thrombosis in septic mice induced by the administration of lipopolysaccharide (LPS. From the NIR fluorescence imaging, we found that the number of thrombi in septic mice was significantly increased by the administration of LPS. The formation of thrombi in cerebral blood vessels in septic mice was confirmed by enzyme-linked immunosorbent assay (ELISA. We also found that the number of thrombi significantly decreased after the administration of heparin, an inhibitor of blood coagulation. These results show that NIR fluorescence imaging with QD1100 is useful for the evaluation of the pathological state of cerebral blood vessels in septic mice.

  17. Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Yvind, Kresten

    2011-01-01

    The emission wavelength of InAs quantum dots grown on InP has been shown to shift to the technologically desirable 1.5μm with the deposition of 1–2 monolayers of GaAs on top of the quantum dots. Here, we use aberration-corrected scanning transmission electron microscopy to investigate morphological...... and compositional changes occurring to the quantum dots as a result of the deposition of 1.7 monolayers of GaAs on top of them, prior to complete overgrowth with InP. The results are compared with theoretical models describing the overgrowth process....

  18. Quantum-dot emitters in photonic nanostructures

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter

    2010-01-01

    The spontaneous emission from self-assembled semiconductor quantum dots is strongly influenced by the environment in which they are placed. This can be used to determine fundamental optical properties of the quantum dots as well as to manipulate and control the quantum-dot emission itself....

  19. Near-infrared quantum dots for HER2 localization and imaging of cancer cells.

    Science.gov (United States)

    Rizvi, Sarwat B; Rouhi, Sepideh; Taniguchi, Shohei; Yang, Shi Yu; Green, Mark; Keshtgar, Mo; Seifalian, Alexander M

    2014-01-01

    Quantum dots are fluorescent nanoparticles with unique photophysical properties that allow them to be used as diagnostic, therapeutic, and theranostic agents, particularly in medical and surgical oncology. Near-infrared-emitting quantum dots can be visualized in deep tissues because the biological window is transparent to these wavelengths. Their small sizes and free surface reactive groups that can be conjugated to biomolecules make them ideal probes for in vivo cancer localization, targeted chemotherapy, and image-guided cancer surgery. The human epidermal growth factor receptor 2 gene (HER2/neu) is overexpressed in 25%-30% of breast cancers. The current methods of detection for HER2 status, including immunohistochemistry and fluorescence in situ hybridization, are used ex vivo and cannot be used in vivo. In this paper, we demonstrate the application of near-infrared-emitting quantum dots for HER2 localization in fixed and live cancer cells as a first step prior to their in vivo application. Near-infrared-emitting quantum dots were characterized and their in vitro toxicity was established using three cancer cell lines, ie, HepG2, SK-BR-3 (HER2-overexpressing), and MCF7 (HER2-underexpressing). Mouse antihuman anti-HER2 monoclonal antibody was conjugated to the near-infrared-emitting quantum dots. In vitro toxicity studies showed biocompatibility of SK-BR-3 and MCF7 cell lines with near-infrared-emitting quantum dots at a concentration of 60 μg/mL after one hour and 24 hours of exposure. Near-infrared-emitting quantum dot antiHER2-antibody bioconjugates successfully localized HER2 receptors on SK-BR-3 cells. Near-infrared-emitting quantum dot bioconjugates can be used for rapid localization of HER2 receptors and can potentially be used for targeted therapy as well as image-guided surgery.

  20. Efficient spin filter using multi-terminal quantum dot with spin-orbit interaction

    Directory of Open Access Journals (Sweden)

    Yokoyama Tomohiro

    2011-01-01

    Full Text Available Abstract We propose a multi-terminal spin filter using a quantum dot with spin-orbit interaction. First, we formulate the spin Hall effect (SHE in a quantum dot connected to three leads. We show that the SHE is significantly enhanced by the resonant tunneling if the level spacing in the quantum dot is smaller than the level broadening. We stress that the SHE is tunable by changing the tunnel coupling to the third lead. Next, we perform a numerical simulation for a multi-terminal spin filter using a quantum dot fabricated on semiconductor heterostructures. The spin filter shows an efficiency of more than 50% when the conditions for the enhanced SHE are satisfied. PACS numbers: 72.25.Dc,71.70.Ej,73.63.Kv,85.75.-d

  1. Multicolored Cd(1-x)Zn(x)Se quantum dots with type-I core/shell structure: single-step synthesis and their use as light emitting diodes.

    Science.gov (United States)

    Pu, Ying-Chih; Hsu, Yung-Jung

    2014-04-07

    We developed a single-step hot-injection process to synthesize Cd1-xZnxSe quantum dots (QDs) with tunable emission wavelengths. The multiple emission colors of the Cd1-xZnxSe QDs resulted from the variation in their compositions (x value) with the reaction time. Because of the higher reactivity of the Cd precursor, QDs whose composition was rich in CdSe were generated at the beginning of the reaction. As the reaction proceeded, the later-formed ZnSe shell was simultaneously alloyed with the core, giving rise to a progressive alloying treatment for the grown QDs. During the reaction period, the emission color of the Cd1-xZnxSe QDs shifted from red to orange, to yellow, to green and finally to blue. A light emitting diode (LED) composed of multilayers of ITO/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)/poly(3-hexylthiophene) blended with Cd1-xZnxSe QDs/Al was fabricated to test the electroluminescence (EL) properties of the QDs. The EL results show high color purity for the emission from LED devices containing Cd1-xZnxSe QDs, revealing that the as-synthesized QDs can be easily processed and integrated into a light-emitting device without using a complicated procedure. The findings from the present work also demonstrate the advantage of using the current single-step synthetic approach to obtain a batch of Cd1-xZnxSe QDs that may emit different colors in prototype LEDs.

  2. Coherent two-photon excitation of quantum dots

    Science.gov (United States)

    Ostermann, L.; Huber, T.; Prilmüller, M.; Solomon, G. S.; Ritsch, H.; Weihs, G.; Predojević, A.

    2016-04-01

    Single semiconductor quantum dots, due to their discrete energy structure, form single photon and twin photon sources that are characterized by a well-defined frequency of the emitted photons and inherently sub-Poissonian statistics. The single photons are generated through a recombination of an electron-hole pair formed by an electron from the conduction band and a hole from the valence band. When excited to the biexciton state quantum dots can provide pairs of photons emitted in a cascade. It has been shown that this biexciton-exciton cascade can deliver entangled pairs of photons. To achieve a deterministic generation of photon pairs from a quantum dot system one requires exciting it using a two-photon resonant excitation of the biexciton. Particularly, an efficient and coherent excitation of the biexciton requires the elimination of the single exciton probability amplitude in the excitation pulse and reaching the lowest possible degree of dephasing caused by the laser excitation. These two conditions impose contradictory demands on the excitation pulse-length and its intensity. We addressed this problem from a point of view that does not include interaction of the quantum dot with the semiconductor environment. We found an optimized operation regime for the system under consideration and provide guidelines on how to extend this study to other similar systems. In particular, our study shows that an optimal excitation process requires a trade-off between the biexciton binding energy and the excitation laser pulse length.

  3. Cation exchange-based facile aqueous synthesis of small, stable, and nontoxic near-infrared Ag₂Te/ZnS core/shell quantum dots emitting in the second biological window.

    Science.gov (United States)

    Chen, Chi; He, Xuewen; Gao, Li; Ma, Nan

    2013-02-01

    Facile aqueous synthesis of near-infrared Ag(2)Te quantum dots (QDs) and Ag(2)Te/ZnS core/shell QDs emitting in the second biological window is reported. The QD synthesis is based on a straightforward cation exchange process between CdTe QDs and Ag(+) ions conducted in aqueous solution. The prepared Ag(2)Te QDs possess near-infrared emission ranging from 900 to 1300 nm and a quantum yield up to 2.1%. A ZnS shell was grown on the Ag(2)Te QD to further enhance the photoluminescence intensity with a quantum yield of 5.6%. These Ag(2)Te/ZnS core/shell QDs possess robust colloidal stability and photostability with minimum photoluminescence fluctuation upon incubation for 72 h in biological buffer or continuous laser excitation for 120 min. Also, These QDs possess small hydrodynamic size (∼7.6 nm) and are non-cytotoxic to human cells, which is ideal for optical bioimaging in the second biological window.

  4. Unique oxide overcoating of CuInS2/ZnS core/shell quantum dots with ZnGa2O4 for fabrication of white light-emitting diode with improved operational stability

    Science.gov (United States)

    Song, Woo-Seuk; Jang, Eun-Pyo; Kim, Jong-Hoon; Jang, Ho Seong; Yang, Heesun

    2013-02-01

    CuInS2 quantum dots (QDs) have been recently highlighted as blue-to-yellow color converters for the demonstration of QD-based white light-emitting diodes (LEDs) owing to their advantageous fluorescent attributes including a broadband yellow emission and exceptional quantum yield. Similar to other types of elaborate core/shell structured QDs, however, core/shell QDs of CuInS2/ZnS are also susceptible to the photo-induced degradation, rendering them inappropriate for the practical application to high operational stability white LED. In this study, CuInS2/ZnS QDs are overcoated with the unprecedented oxide phase of ZnGa2O4 to enhance their photostability, and the resulting CuInS2/ZnS/ZnGa2O4 QDs are characterized with X-ray diffraction and transmission electron microscope. The operational stability test of CuInS2/ZnS/ZnGa2O4 QD-based white LED is performed and compared with that of uncoated CuInS2/ZnS QD-based one, and the efficacy of ZnGa2O4 overlayer is proved in mitigating the photodegradation of QDs and thus improving the device stability.

  5. Optophononics with Coupled Quantum Dots

    Science.gov (United States)

    2014-02-18

    single InAs/GaAs quantum dots. Phys. Rev. B 68, 233301 (2003). 9. Bennemann, K.-H. & Ketterson, J. B. (eds), Superconductivity : Conventional and...superlattices. Science 338, 935–939 (2012). 17. Kim, J.-H. et al. Coherent phonons in carbon nanotubes and graphene . Chem. Phys. 413, 55–80 (2013). 18

  6. Polymer-coated quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Liu, Rongrong; Vancso, Gyula J.

    2013-01-01

    Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of

  7. Transport through graphene quantum dots

    Science.gov (United States)

    Güttinger, J.; Molitor, F.; Stampfer, C.; Schnez, S.; Jacobsen, A.; Dröscher, S.; Ihn, T.; Ensslin, K.

    2012-12-01

    We review transport experiments on graphene quantum dots and narrow graphene constrictions. In a quantum dot, electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. The recently isolated two-dimensional carbon allotrope graphene is an interesting host to study quantum phenomena, due to its novel electronic properties and the expected weak interaction of the electron spin with the material. Graphene quantum dots are fabricated by etching mono-layer flakes into small islands (diameter 60-350 nm) with narrow connections to contacts (width 20-75 nm), serving as tunneling barriers for transport spectroscopy. Electron confinement in graphene quantum dots is observed by measuring Coulomb blockade and transport through excited states, a manifestation of quantum confinement. Measurements in a magnetic field perpendicular to the sample plane allowed to identify the regime with only a few charge carriers in the dot (electron-hole transition), and the crossover to the formation of the graphene specific zero-energy Landau level at high fields. After rotation of the sample into parallel magnetic field orientation, Zeeman spin splitting with a g-factor of g ≈ 2 is measured. The filling sequence of subsequent spin states is similar to what was found in GaAs and related to the non-negligible influence of exchange interactions among the electrons.

  8. Nuclear Spins in Quantum Dots

    NARCIS (Netherlands)

    Erlingsson, S.I.

    2003-01-01

    The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis,

  9. Silicon quantum dots: surface matters

    NARCIS (Netherlands)

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, K.

    2014-01-01

    Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers—silicon

  10. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  11. Efficiency and Coherence of Quantum-Dot Single-Photon Sources

    DEFF Research Database (Denmark)

    Madsen, Marta Arcari

    in a Hong-Ou-Mandel experiment. Finally, we demonstrate that a coherent quantum dot coupled to a photonic crystal waveguide is not only a promising single-photon source, but also a highly nonlinear system sensitive at the single-photon level. By performing resonant transmission measurements through...... on this result, we improved the design of the photonic crystal waveguide, and we characterized in detail the efficiency of the device and the coherence of the emitted single photons. We investigate the decoherence mechanisms affecting the quantum dots by performing resonance fluorescence experiments on emitters...... of a single charge. A very high degree of coherence can be achieved by embedding quantum dots in electrically gated samples. We show that a single quantum dot behaves like a nearly-ideal two-level system in a sample with electrical gates, and single photons emitted up to 1 μs apart show indistinguishability...

  12. Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

    OpenAIRE

    Boyd, Erin E; Storm, Kristian; Samuelson, Lars; Westervelt, Robert M.

    2011-01-01

    We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter ≈ 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quant...

  13. Surface Modification of CdSe(ZnS) quantum dots for biomedical applications

    OpenAIRE

    Winzell, Ann

    2010-01-01

    Quantum dots are inorganic nanocrystals of semiconductor metals that have unique light emitting properties. Due to their tunable and narrow emission profile, broad absorption spectra, resistance to photobleaching and high level of brightness they have emerged as inorganic fluorophores and numerous applicabilities for in vitro, in situ as well as in vivo studies are present. The chemical nature of the quantum dot surface needs to be altered in order to make the inorganic nanoparticles applicab...

  14. Tuning Single Quantum Dot Emission with a Micromirror.

    Science.gov (United States)

    Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

    2018-01-11

    The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

  15. Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si

    Science.gov (United States)

    2015-08-30

    and characterization of InAs/InP quantum dot tube and AlGaN nanowire heterostructures on Si. We have further investigated the design, fabrication...Ultrahigh-Speed Electrically Injected 1.55 um Quantum Dot Microtube and Nanowire Lasers on Si In this report, we describe the progress made in rolled...up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of

  16. Designing artificial 2D crystals with site and size controlled quantum dots.

    Science.gov (United States)

    Xie, Xuejun; Kang, Jiahao; Cao, Wei; Chu, Jae Hwan; Gong, Yongji; Ajayan, Pulickel M; Banerjee, Kaustav

    2017-08-30

    Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS2), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS2. By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.

  17. Quantum Dot-based Immunohistochemistry for Pathological Applications

    Directory of Open Access Journals (Sweden)

    Li Zhou

    2016-01-01

    Full Text Available Quantum dots (QDs are novel light emitting semiconductor nanocrystals with diameter ranging from 2 to 20 nm. In comparison with traditional organic dyes and fluorescent proteins, QDs possess unique optical properties including extremely high fluorescence efficiency and minimal photobleaching which make them emerge as a new class of fluorescent labels for molecular imaging and biomedical analysis. Herein, recent advances in fundamental mechanisms and pathological applications of QD were reviewed.

  18. Barrier Engineered Quantum Dot Infrared Photodetectors

    Science.gov (United States)

    2015-06-01

    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0111 TR-2015-0111 BARRIER ENGINEERED QUANTUM DOT INFRARED PHOTODETECTORS Sanjay Krishna Center for High Technology...2011 – 22 May 2012 4. TITLE AND SUBTITLE Barrier Engineered Quantum Dot Infrared Photodetectors 5a. CONTRACT NUMBER FA9453-12-1-0336 5b. GRANT...is Unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT To investigate barrier engineered designs to reduce the dark current in quantum dot infrared

  19. Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage

    Science.gov (United States)

    Mandal, A.; Verma, U.; Chakrabarti, S.

    2013-06-01

    Self-assembled InAs/GaAs multilayer quantum dots (MQDs) have been widely investigated for their potential application in optoelectronic applications such as lasers and photovoltaic devices. This study focuses on analyzing the use of annealing to manipulate the optoelectronic and physical properties of 10-layer InAs/GaAs MQDs. MQD growth rate and parameters such as the capping layer thickness of the InAlGaAs and GaAs capping combination and monolayer coverage of the seed quantum dot (QD) layer were varied. Increase in the number of QD families for one 700 °C annealed sample (A2) showed the effects of growth rate and post-growth annealing. Other two samples (B2 and B3) showed the importance of thick combination capping of InAlGaAs and GaAs in an InAs/GaAs MQD system. Samples B2 and B3 revealed an optimized set of characteristics suitable for thermal stability, as the samples were stable even at 750 °C annealing, making them suitable for application in communication lasers.

  20. Controlling electron quantum dot qubits by spin-orbit interactions

    Energy Technology Data Exchange (ETDEWEB)

    Stano, P.

    2007-01-15

    Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)

  1. Enhanced confinement in compositionally heterogeneous alloy quantum dots

    Science.gov (United States)

    Hossain, Zubaer

    While there is a growing need to increase solar cell efficiencies and reduce the cost per watt, reported efficiencies are still well below the thermodynamic limit of photovoltaic energy conversion. The major factor that affects the efficiency (by more than 40%) is the lack of absorption or thermalization of electrons. To improve absorption, existing approaches, till date, are focused on combining multiple materials in the form of heterostructures. This talk will show the application of a physics-based mechanistic approach to engineer absorption by using alloy quantum dots and exploiting its heterogeneous compositional and deformation fields. Using a multiscale computational framework that combines density functional theory, k.p method and the finite element calculations, the work shows that heterogeneous distribution of composition and strain fields can lead to substantial confinement in alloy quantum dots. Subsequently alloy quantum dots that are much larger (on the order of 50 nm) in size - compared to their single crystalline counterparts (which are on the order of 5 nm) - can still provide significant confinement. The findings uncover new fundamental insights for engineering confinement that are unattainable under conventional homogenization approximations.

  2. Preparation of tin oxide quantum dots

    Science.gov (United States)

    Fauzi, N. F. S. M.; Kamarulzaman, N.; Kasim, M. F.; Chayed, N. F.; Aziz, N. D. A.

    2017-09-01

    Quantum dots are interesting nanostructures with have novel physical and chemical characteristics. It is not an easy task to obtain quantum dots because materials tend to agglomerate. In this work, SnO2 quantum dots have been successfully synthesized via a simple and low cost method which is the sol-gel method. Thermal analysis of the precursors were carried out using a Simultaneous Thermogravimetric Analyzer (STA). The annealed samples were characterized using X-Ray Diffraction (XRD) for phase studies. Finally, the crystallite size and morphology of tin oxide quantum dots were determined using Field Emission Scanning Electron Microscopy (FESEM).

  3. POLARON IN CYLINDRICAL AND SPHERICAL QUANTUM DOTS

    Directory of Open Access Journals (Sweden)

    L.C.Fai

    2004-01-01

    Full Text Available Polaron states in cylindrical and spherical quantum dots with parabolic confinement potentials are investigated applying the Feynman variational principle. It is observed that for both kinds of quantum dots the polaron energy and mass increase with the increase of Frohlich electron-phonon coupling constant and confinement frequency. In the case of a spherical quantum dot, the polaron energy for the strong coupling is found to be greater than that of a cylindrical quantum dot. The energy and mass are found to be monotonically increasing functions of the coupling constant and the confinement frequency.

  4. Mixed-quantum-dot solar cells.

    Science.gov (United States)

    Yang, Zhenyu; Fan, James Z; Proppe, Andrew H; Arquer, F Pelayo García de; Rossouw, David; Voznyy, Oleksandr; Lan, Xinzheng; Liu, Min; Walters, Grant; Quintero-Bermudez, Rafael; Sun, Bin; Hoogland, Sjoerd; Botton, Gianluigi A; Kelley, Shana O; Sargent, Edward H

    2017-11-06

    Colloidal quantum dots are emerging solution-processed materials for large-scale and low-cost photovoltaics. The recent advent of quantum dot inks has overcome the prior need for solid-state exchanges that previously added cost, complexity, and morphological disruption to the quantum dot solid. Unfortunately, these inks remain limited by the photocarrier diffusion length. Here we devise a strategy based on n- and p-type ligands that judiciously shifts the quantum dot band alignment. It leads to ink-based materials that retain the independent surface functionalization of quantum dots, and it creates distinguishable donor and acceptor domains for bulk heterojunctions. Interdot carrier transfer and exciton dissociation studies confirm efficient charge separation at the nanoscale interfaces between the two classes of quantum dots. We fabricate the first mixed-quantum-dot solar cells and achieve a power conversion of 10.4%, which surpasses the performance of previously reported bulk heterojunction quantum dot devices fully two-fold, indicating the potential of the mixed-quantum-dot approach.

  5. Detecting strain wave propagation through quantum dots by pump-probe spectroscopy: A theoretical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Huneke, J; Kuhn, T [Institut fuer Festkoerpertheorie, Westfaelische Wilhelms-Universitaet Muenster, Wilhelm-Klemm-Strasse 10, 48149 Muenster (Germany); Axt, V M, E-mail: jan.huneke@uni-muenster.d [Institut fuer Theoretische Physik III, Universitaet Bayreuth, 95440 Bayreuth (Germany)

    2010-02-01

    The influence of strain waves traveling across a quantum dot structure on its optical response is studied for two different situations: First, a strain wave is created by the optical excitation of a single quantum dot near a surface which, after reflection at the surface, reenters the dot; second, a phonon wave packet is emitted by the excitation of a nearby second dot and then travels across the quantum dot. Pump-probe type excitations are simulated for quantum dots in the strong confinement limit. We show that the optical signals allow us to monitor crossing strain waves for both structures in the real-time response as well as in the corresponding pump-probe spectra. In the time-derivative of the phase of the polarization a distinct trace reflects the instantaneous shifts of the transition energy during the passage while in the spectra pronounced oscillations reveal the passage of the strain waves.

  6. Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.

    Science.gov (United States)

    De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

    2012-11-15

    Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

  7. Quantum Dot Spectrum Converters for Enhanced High Efficiency Photovoltaics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This research proposes to enhance solar cell efficiency, radiation resistance and affordability. The Quantum Dot Spectrum Converter (QDSC) disperses quantum dots...

  8. Microwave spectroscopy on a double quantum dot with an on-chip Josephson oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Holleitner, A.W.; Qin, H.; Simmel, F.; Irmer, B.; Kotthaus, J. P. [Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universitaet, Geschwister-Scholl-Platz 1, 80539 Muenchen (Germany); Blick, R.H. [Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universitaet, Geschwister-Scholl-Platz 1, 80539 Muenchen (Germany). E-mail: robert.blick at physik.uni-muenchen.de; Ustinov, A.V. [Physikalisches Institut III, Universitaet Erlangen-Nuernberg, Erwin-Rommel-Strasse 1, 91058 Erlangen (Germany); Eberl, K. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)

    2000-01-01

    We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an 'ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO{sub x}/Nb junction as a microwave source. We find photon-assistedtunnelling sidebands induced by the Josephson oscillator, and compare the results with those obtained using an externally operated microwave source. (author)

  9. Solid state photoluminescence thermoplastic starch film containing graphene quantum dots.

    Science.gov (United States)

    Javanbakht, Siamak; Namazi, Hassan

    2017-11-15

    Fluorescent polymer films, a matrix of thermoplastic starch (TPS) based bio-polymer and graphene quantum dots (GQDs) were fabricated by a casting method. The GQDs provide solid state fluorescent properties to the prepared thermoplastic starch graphene quantum dots (TPS/GQD). The fluorescent, thermal, mechanical and optical properties of TPS/GQD were investigated. High optical transparency (88-91%) and well dispersion of GQDs (1-17wt%) in the polymeric matrix of TPS/GQD nanocomposite was observed. The maximum photoluminescence intensity of materials has been obtained at 50wt% of GQD content. These materials have great potential to use in flexible electronic displays, light emitting diodes (LED), GQD-LED packaging and other optoelectronics applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Thick-shell nanocrystal quantum dots

    Science.gov (United States)

    Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  11. Optical Properties of Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Perinetti, U.

    2011-01-01

    This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

  12. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... applications. Quantum dot semiconductor lasers, due to the discrete density of states, low threshold current and temperature dependence, high optical gain and quan- tum efficiency and high modulation speed, ... elastic properties of neighbour materials, lattice mis- match, and geometry of the quantum dot ...

  13. Surround-gated vertical nanowire quantum dots

    NARCIS (Netherlands)

    Van Weert, M.H.M.; Den Heijer, M.; Van Kouwen, M.P.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

    2010-01-01

    We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the

  14. Optical studies of capped quantum dots

    NARCIS (Netherlands)

    Wuister, S.F.

    2005-01-01

    This thesis describes the synthesis and spectroscopy of CdSe and CdTe semiconductor quantum dots (QDs). The first chapter gives an introduction into the unique size dependent properties of semiconductor quantum dots. Highly luminescent QDs of CdSe and CdTe were prepared via a high temperature method

  15. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 26; Issue 1. Many electron effects in ... Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, ... Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of ...

  16. Exciton in closed and opened quantum dot

    Directory of Open Access Journals (Sweden)

    M.V.Tkach

    2007-01-01

    Full Text Available The theory of exciton spectrum in spherically symmetric states for the three- shell closed spherical quantum dot is proposed. The evolution of the exciton spectrum while varying the outer well thickness from zero (stationary spectrum of single closed spherical quantum dot to infinity (quasistationary spectrum of a single open spherical quantum dot is investigated. The mechanism of damping (semiwidth of quasistationary states due to the redistribution over the energy levels of probability of exciton location in the space of two inner shells of nanosystem is studied. It is shown that the three shell closed spherical quantum dot of a rather big thickness of the outer well quite sufficiently and exactly reflects the basic properties of the quasistationary exciton spectrum in a single open spherical quantum dot.

  17. Biocompatible Quantum Dots for Biological Applications

    Science.gov (United States)

    Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

  18. Biocompatible quantum dots for biological applications.

    Science.gov (United States)

    Rosenthal, Sandra J; Chang, Jerry C; Kovtun, Oleg; McBride, James R; Tomlinson, Ian D

    2011-01-28

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. Copyright © 2011 Elsevier Ltd. All rights reserved.

  19. InAs/InP/ZnSe Core/Shell/Shell Quantum Dots as Near-Infrared Emitters: Bright, Narrow-Band, Non-Cadmium Containing, and Biocompatible.

    Science.gov (United States)

    Xie, Renguo; Chen, Kai; Chen, Xiaoyuan; Peng, Xiaogang

    2008-12-14

    High quality InAs/InP/ZnSe core/shell/shell quantum dots have been grown by a one-pot approach. This engineered quantum dots with unique near-infrared (NIR) fluorescence, possessing outstanding optical properties, and the biocompatibility desired for in vivo applications. The resulting quantum dots have significantly lower intrinsic toxicity compared to NIR emissive dots containing elements such as cadmium, mercury, or lead. Also, these newly developed ultrasmall non-Cd containing and NIR-emitting quantum dots showed significantly improved circulation half-life and minimal reticuloendothelial system (RES) uptake.

  20. A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

    DEFF Research Database (Denmark)

    See, A. M.; Klochan, O.; Micolich, P.

    2013-01-01

    We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The tem......We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias...

  1. Memristive operation mode of a site-controlled quantum dot floating gate transistor

    Energy Technology Data Exchange (ETDEWEB)

    Maier, P., E-mail: patrick.maier@physik.uni-wuerzburg.de; Hartmann, F.; Mauder, T.; Emmerling, M.; Schneider, C.; Kamp, M.; Worschech, L. [Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Höfling, S. [Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS (United Kingdom)

    2015-05-18

    We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

  2. Single photoelectron trapping, storage, and detection in a one-electron quantum dot

    Science.gov (United States)

    Rao, Deepak Sethu; Szkopek, Thomas; Robinson, Hans Daniel; Yablonovitch, Eli; Jiang, Hong-Wen

    2005-12-01

    There has been considerable progress in electrostatically emptying, and refilling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs /AlyGa1-yAs modulation-doped heterostructure. We report the filling of such a quantum dot by a single photoelectron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photoelectron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photoelectron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photoelectron detector could allow for information transfer between flying photon qubits and stored electron qubits.

  3. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

    Science.gov (United States)

    de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

    2017-10-31

    Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

  4. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  5. Electron transport in quantum dots

    CERN Document Server

    2003-01-01

    When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...

  6. Comparison of dynamic properties of InP/InAs quantum-dot and quantum-dash lasers

    Science.gov (United States)

    Sadeev, T.; Arsenijević, D.; Bimberg, D.

    2016-10-01

    The dynamic properties of MOVPE grown InP/InAs quantum-dot and quantum-dash lasers, showing identical structural design, emitting in the C-band are investigated and compared to each other. Based on the small-signal measurements, we show the impact of the density of states function on the cut-off frequency, being larger for quantum dots at low currents, and reaching similar values for quantum dashes only at higher currents. The large-signal measurements show error-free data transmission at 22.5 and 17.5 Gbit/s for the quantum-dot and quantum-dash lasers.

  7. Excitonic quasimolecules in nanosystems of quantum dots

    Science.gov (United States)

    Pokutnyi, Sergey I.

    2017-09-01

    The theory of excitonic quasimolecules (biexcitons) (formed of spatially separated electrons and holes) in a nanosystem that consists of semiconductor quantum dots synthesized in a borosilicate glass matrix is presented. It is shown that exciton quasimolecule formation is of a threshold character and is possible in nanosystem, if the spacing between the quantum dots surfaces is larger than a certain critical spacing. It was found that the binding energy of the singlet ground state of an exciton quasimolecule, consisting of two semiconductor quantum dots is a significant large values, larger than the binding energy of the biexciton in a semiconductor single crystal by almost two orders of magnitude.

  8. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  9. Quantum dots for quantum information technologies

    CERN Document Server

    2017-01-01

    This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

  10. Fluorescent Quantum Dots for Biological Labeling

    Science.gov (United States)

    McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit

    2003-01-01

    Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.

  11. Scanning gate microscopy of ultra clean carbon nanotube quantum dots

    OpenAIRE

    Xue, Jiamin; Dhall, Rohan; Cronin, Stephen B.; LeRoy, Brian J.

    2015-01-01

    We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can b...

  12. Study on electroluminescence from multiply-stacking valency controlled Si quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takahisa [Graduate School of Engineering, Nagoya University, Nagoya (Japan); Makihara, Katsunori, E-mail: makihara@nuee.nagoya-u.ac.jp [Graduate School of Engineering, Nagoya University, Nagoya (Japan); Ohta, Akio [Venture Business Laboratory, Nagoya University, Nagoya (Japan); Ikeda, Mitsuhisa [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-hiroshima (Japan); Miyazaki, Seiichi [Graduate School of Engineering, Nagoya University, Nagoya (Japan)

    2016-03-01

    We have fabricated two-tiered hetero-structures consisting of B δ-doped and P δ-doped Si quantum dots (QDs) embedded in SiO{sub 2} on p- and n-Si(100) by repeating Si-QDs formation by low pressure chemical vapor deposition (LPCVD) using pure SiH{sub 4} and subsequent surface oxidation and modification by remote plasma, and characterized their electroluminescence (EL) in near-infrared region under DC and AC bias applications to semitransparent Au top-electrodes. The observed EL spectra can be deconvoluted into mainly two components peaked at ~ 1.07 and ~ 1.11 eV, which involve recombination processes through impurity levels. The input power dependence of EL intensities shows that two-tiered structure of P-doped and B-doped Si-QDs is effective to improve EL efficiency while a simple stacking of B-doped Si-QDs is suited to low power operation. This indicates that energy relaxation to lowest quantized levels in charge transfer among valency controlled Si-QDs by impurity doping plays a role on recombination of injected electrons and holes. - Highlights: • We have fabricated two-tiered heterostructures consisting of δ-doped Si-quantum-dots. • The PN junction-like Si-quantum-dots stack is effective to realize high efficient EL. • A simple stacking of B-doped Si-quantum-dots is better suited to low power operation.

  13. Thermoelectric transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Lukas Heinrich

    2016-06-30

    In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum

  14. Ultrafast spectroscopy of quantum dots

    CERN Document Server

    Foo, E

    2001-01-01

    exchange-correlation interactions among the confined carriers inside the dots are suggested to be responsible. A density functional calculation for BGR of the ground state transition shows good agreement with our experimental results, especially in the high dot occupancy regime. Many-particle state scattering gives rise to large homogeneous spectral broadening of the PL peaks, from which an intradot relaxation time approx 300 fs is estimated. This observation supports the results obtained by direct excitation of carriers within the QDs. Femtosecond time-resolved photoluminescence measured by frequency up-conversion has been used to investigate carrier dynamics in InAs/GaAs self-assembled quantum dots (QDs). Our results reveal ultrafast carrier relaxation and sequential state filling. Carrier relaxation is proposed to occur by Auger-type processes, and the sequential state filling suggests that intradot relaxation is much faster than carrier capture from the InAs wetting layer. Measurements obtained by direct ...

  15. Electronic homogeneity of nanowire heterostructure Light Emitting Diodes (LEDs)

    Science.gov (United States)

    Selcu, Camelia; May, Brelon J.; Sarwar, A. T. M. Golam; Myers, Roberto C.

    In addition to low defect densities and great tunability bandgap within a single heterostructure, the possibility of growing (Al, In,_) GaN nanowire heterostructure LEDs on different substrates while maintaining their high electronic and optical properties makes them very attractive. We investigated the electronic homogeneity of the (Al, In,_) GaN nanowire ensemble by acquiring current maps at certain applied biases using conductive AFM. By taken IVs on individual nanowires, we found that different wires have different turn on voltages and that some of the nanowires degrade due to the applied bias.

  16. Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared

    Science.gov (United States)

    2011-07-01

    InGaAs and GaAs double wells with AlGaAs barriers, leading to a less strained InAs/ InGaAs /GaAs/ AlGaAs heterostructure...have been further advanced by embedding InAs QDs in InGaAs and GaAs double wells with AlGaAs barriers, leading to a less strained InAs/ InGaAs /GaAs... AlGaAs heterostructure. These lower strain quantum dots-in-a-double- well devices exhibit lower dark current than the previous generation DWELL

  17. Quantum Phase Transitions in Quantum Dots

    OpenAIRE

    Rau, I. G.; Amasha, S.; Oreg, Y.; Goldhaber-Gordon, D.

    2013-01-01

    This review article describes theoretical and experimental advances in using quantum dots as a system for studying impurity quantum phase transitions and the non-Fermi liquid behavior at the quantum critical point.

  18. Large quantum dots with small oscillator strength

    DEFF Research Database (Denmark)

    Stobbe, Søren; Schlereth, T.W.; Höfling, S.

    2010-01-01

    We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... oscillator strength due to Coulomb effects. This is in stark contrast to the measured oscillator strength, which turns out to be so small that it can be described by excitons in the strong confinement regime. We attribute these findings to exciton localization in local potential minima arising from alloy...

  19. Ge Quantum Dot Infrared Imaging Camera Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  20. Carbon Quantum Dots for Zebrafish Fluorescence Imaging

    National Research Council Canada - National Science Library

    Kang, Yan-Fei; Li, Yu-Hao; Fang, Yang-Wu; Xu, Yang; Wei, Xiao-Mi; Yin, Xue-Bo

    2015-01-01

    Carbon quantum dots (C-QDs) are becoming a desirable alternative to metal-based QDs and dye probes owing to their high biocompatibility, low toxicity, ease of preparation, and unique photophysical properties...

  1. Nanomaterials: Earthworms lit with quantum dots

    Science.gov (United States)

    Tilley, Richard D.; Cheong, Soshan

    2013-01-01

    Yeast, bacteria and fungi have been used to synthesize a variety of nanocrystals. Now, the metal detoxification process in the gut of an earthworm is exploited to produce biocompatible cadmium telluride quantum dots.

  2. Bismides: 2D structures and quantum dots

    Science.gov (United States)

    Pačebutas, Vaidas; Butkutė, Renata; Čechavičius, Bronislovas; Stanionytė, Sandra; Pozingytė, Evelina; Skapas, Martynas; Selskis, Algirdas; Geižutis, Andrejus; Krotkus, Arūnas

    2017-09-01

    The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treating on structural and luminescent properties of QWs is discussed. The complex structural investigations using x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy revealed high crystal structure, smooth surfaces and abrupt interfaces of both GaAsBi and GaInAsBi QWs. The temperature dependent photoluminescence measurements demonstrated emission wavelengths up to 1.43 µm in room temperature PL spectra measured for GaAsBi/GaAs QWs containing 12% Bi, whereas GaInAsBi QWs with 4.2% of bismuth inserted between GaAs barriers has reached 1.25 µm. Moreover, the annealing at high temperatures of GaAsBi/AlAs QWs stimulated agglomeration of bismuth to quantum dots in the well layers, emitting at 1.5 µm. The achieved wavelengths are the longest ones declared for the GaAsBi and GaInAsBi QW structures grown on the GaAs substrate, therefore bismide-based QWs are the promising structures for applications in infrared devices.

  3. Thermally evaporated hybrid perovskite for hetero-structured green light-emitting diodes

    Science.gov (United States)

    Mariano, Fabrizio; Listorti, Andrea; Rizzo, Aurora; Colella, Silvia; Gigli, Giuseppe; Mazzeo, Marco

    2017-10-01

    Thermal evaporation of green-light emitting perovskite (MaPbBr3) films is reported. Morphological studies show that a soft thermal treatment is needed to induce an outstanding crystal growth and film organization. Hetero-structured light-emitting diodes, embedding as-deposited and annealed MAPbBr3 films as active layers, are fabricated and their performances are compared, highlighting that the perovskite evolution is strongly dependent on the growing substrate, too.

  4. Pressure dependent optical gain in Type-II PbSe/PbS core /shell quantum dots

    Science.gov (United States)

    Saravanamoorthy, S. N.; John Peter, A.; Lee, Chang Woo

    2017-11-01

    Pressure induced nonlinear optical properties of Type-II lead based core/shell quantum dot heterostructure are investigated. The pressure dependent exciton binding energies are obtained with the increase of shell thickness for various inner core radii. The exciton interaction energies in a PbSe/PbS core/shell quantum dot inner core radii are found in the presence of hydrostatic pressure using variational method within the single band effective mass approximation. The threshold current density with the hydrostatic pressure and inner dot radii in a PbSe/PbS dot with the constant shell width is obtained. The pressure dependence on peak optical gain with the current density in a PbSe/PbS core/shell quantum dot with the fixed carrier density is found. The pressure related optical gain with the photon energy in a PbSe/PbS core/shell quantum dot is also obtained. The results show that the threshold current density increases by 20% when the pressure increases from 0 GPa to 4 GPa for 20 Å quantum dot radius whereas 16% of increase in threshold current density is observed for 50 Å quantum dot radius for the same increase of pressure values. The peak of the optical gain is observed to increase nonlinearly with the applied hydrostatic pressure and 12% of optical gain is enhanced for every 2 GPa pressure value. The results will be useful for some potential applications in near infrared light sources.

  5. Quantum dots with single-atom precision.

    Science.gov (United States)

    Fölsch, Stefan; Martínez-Blanco, Jesús; Yang, Jianshu; Kanisawa, Kiyoshi; Erwin, Steven C

    2014-07-01

    Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive. We used a scanning tunnelling microscope to create quantum dots with identical, deterministic sizes. By using the lattice of a reconstructed semiconductor surface to fix the position of each atom, we controlled the shape and location of the dots with effectively zero error. This allowed us to construct quantum dot molecules whose coupling has no intrinsic variation but could nonetheless be tuned with arbitrary precision over a wide range. Digital fidelity opens the door to quantum dot architectures free of intrinsic broadening-an important goal for technologies from nanophotonics to quantum information processing as well as for fundamental studies of confined electrons.

  6. Quantum dots and spin qubits in graphene

    Energy Technology Data Exchange (ETDEWEB)

    Recher, Patrik; Trauzettel, Bjoern, E-mail: precher@physik.uni-wuerzburg.de, E-mail: trauzettel@physik.uni-wuerzburg.de [Institut fuer Theoretische Physik und Astrophysik, University of Wuerzburg, 97074 Wuerzburg (Germany)

    2010-07-30

    This is a review on graphene quantum dots and their use as a host for spin qubits. We discuss the advantages but also the challenges to use graphene quantum dots for spin qubits as compared to the more standard materials like GaAs. We start with an overview of this young and fascinating field and then discuss gate-tunable quantum dots in detail. We calculate the bound states for three different quantum dot architectures where a bulk gap allows for confinement via electrostatic fields: (i) graphene nanoribbons with armchair boundaries, (ii) a disc in single-layer graphene, and (iii) a disc in bilayer graphene. In order for graphene quantum dots to be useful in the context of spin qubits, one needs to find reliable ways to break the valley degeneracy. This is achieved here, either by a specific termination of graphene in (i) or in (ii) and (iii) by a magnetic field, without the need of a specific boundary. We further discuss how to manipulate spin in these quantum dots and explain the mechanism of spin decoherence and relaxation caused by spin-orbit interaction in combination with electron-phonon coupling, and by hyperfine interaction with the nuclear-spin system. (topical review)

  7. Semiconductor Quantum Dots with Photoresponsive Ligands.

    Science.gov (United States)

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  8. Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

    2003-01-01

    A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin e......A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki...... with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic-polarized in the edge geometry....

  9. Optical properties of ZnO-nanowire/CdSe-colloidal-quantum-dot hybrid structures

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dongchao; Richters, Jan-Peter; Dev, Apurba; Voss, Tobias [Semiconductor Optics, Institute of Solid State Physics, University of Bremen (Germany)

    2011-07-01

    One of the research interests in modern nanotechnology is the assembly and study of hybrid heterostructures composed of different materials that offer enhanced properties through the interactions between their different constituents. ZnO nanowires functionalized with colloidal semiconductor quantum dots (QDs) display tailored optical properties due to energy and electron transfer processes between these two components, and have a huge potential for applications in light-emitting and photovoltaic devices. Using a facile method, we synthesized water-soluble CdSe QDs with cadmium acetate and sodium selenosulfate as Cd and Se precursors, respectively. 3-mercaptopropionic acid (MPA) was used to cap the QDs, acting as the stabilizer, making the QDs water soluble and preventing them from agglomeration. TEM measurements demonstrated a narrow size distribution of the as-prepared QDs with the average diameter around 3 nm, consistent with UV-Vis absorption measurements. The carboxylic groups at the outer surface of the MPA-capped CdSe QDs render a tight and uniform attachment onto the surface of ZnO nanowires with high coverage efficiency possible. We studied the optical properties of the hybrid structures by photoluminescence spectroscopy under different temperatures to analyze the energy and electron transfer dynamics between the nanowires and the QDs.

  10. Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

    Science.gov (United States)

    Liu, Weiwen

    The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

  11. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

    NARCIS (Netherlands)

    Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

    Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

  12. Quantum-dot nano-cavity lasers with Purcell-enhanced stimulated emission

    DEFF Research Database (Denmark)

    Gregersen, Niels; Skovgård, Troels Suhr; Lorke, Michael

    2012-01-01

    We present a rate equation model for quantum-dot light-emitting devices that take into account Purcell enhancement of both spontaneous emission and stimulated emission as well as the spectral profile of the optical and electronic density-of-states. We find that below threshold the b-factor in a q...

  13. Photoconductivity of Quantum Dot Films Towards Third-Generation Solar Cells

    NARCIS (Netherlands)

    Talgorn, E.C.V.

    2010-01-01

    Colloidal semiconductor nanoparticles, also called quantum dots, have unique opto-electronic properties that make them promising candidates for many applications such as solar cells, light–emitting diodes, lasers, or biological imaging. One of the most interesting features is that the bandgap energy

  14. Surface brightens-up Si quantum dots: direct bandgap-like size-tunable emission

    NARCIS (Netherlands)

    Dohnalová, K.; Poddubny, A. N.; Prokofiev, A.A.; de Boer, W.D.A.M.; Umesh, C.P.; Paulusse, J.M.J.; Zuilhof, H.; Gregorkiewicz, T.

    2013-01-01

    Colloidal semiconductor quantum dots (QDs) constitute a perfect material for ink-jet printable large area displays, photovoltaics, light-emitting diode, bio-imaging luminescent markers and many other applications. For this purpose, efficient light emission/absorption and spectral tunability are

  15. Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission

    NARCIS (Netherlands)

    Dohnalova, K.; Poddubny, A.N.; Prokofiev, A.A.; Boer, W.D.A.M.; Umesh, C.; Paulusse, J.M.J.; Zuilhof, H.; Gregorkiewicz, T.

    2013-01-01

    Colloidal semiconductor quantum dots (QDs) constitute a perfect material for ink-jet printable large area displays, photovoltaics, light-emitting diode, bio-imaging luminescent markers and many other applications. For this purpose, efficient light emission/absorption and spectral tunability are

  16. Extraction of the beta-factor for single quantum dots coupled to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Nielsen, Henri Thyrrestrup; Sapienza, Luca; Lodahl, Peter

    2010-01-01

    We present measurements of the β-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The β-factor is evaluated by means of time resolved frequency-dependent photoluminescence spectroscopy. The emission...

  17. Computational intelligence applied to the growth of quantum dots

    Science.gov (United States)

    Singulani, Anderson P.; Vilela Neto, Omar P.; Aurélio Pacheco, Marco C.; Vellasco, Marley B. R.; Pires, Maurício P.; Souza, Patrícia L.

    2008-11-01

    We apply two computational intelligence techniques, namely, artificial neural network and genetic algorithm to the growth of self-assembled quantum dots. The method relies on an existing database of growth parameters with a resulting quantum dot characteristic to be able to later obtain the growth parameters needed to reach a specific value for such a quantum dot characteristic. The computational techniques were used to associate the growth input parameters with the mean height of the deposited quantum dots. Trends of the quantum dot mean height behavior as a function of growth parameters were correctly predicted and the growth parameters required to minimize the quantum dot mean height were provided.

  18. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, Saniya; Das, Ayan; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2013-04-22

    We demonstrate polarized blue single photon emission up to 200 K from an In{sub 0.2}Ga{sub 0.8}N quantum dot in a single Al{sub 0.1}Ga{sub 0.9}N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g{sup (2)}(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

  19. Temperature dependence of the single photon emission from interface-fluctuation GaN quantum dots.

    Science.gov (United States)

    Le Roux, F; Gao, K; Holmes, M; Kako, S; Arita, M; Arakawa, Y

    2017-11-23

    The temperature dependent single photon emission statistics of interface-fluctuation GaN quantum dots are reported. Quantum light emission is confirmed at temperatures up to ~77 K, by which point the background emission degrades the emission purity and results in a measured g(2) (0) in excess of 0.5. A discussion on the extent of the background contamination is also given through comparison to extensive data taken under various ambient and experimental conditions, revealing that the quantum dots themselves are emitting single photons with high purity.

  20. CdSe/ZnS quantum dot films for high performance flexible lighting and display applications.

    Science.gov (United States)

    Altintas, Yemliha; Genc, Sinan; Talpur, Mohammad Younis; Mutlugun, Evren

    2016-07-22

    Colloidal quantum dots have attracted significant interest in recent years for lighting and display applications and have recently appeared in high-end market products. The integration of quantum dots with light emitting diodes has made them promising candidates for superior lighting applications with tunable optical characteristics. In this work we propose and demonstrate high quality colloidal quantum dots in their novel free-standing film forms to allow high quality white light generation to address flexible lighting and display applications. High quality quantum dots have been characterized using transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, steady state and time resolved photoluminescence and dynamic light scattering methods. The engineering of colloidal quantum dot composition and its optical properties in stand-alone film form has led to the experimentally high NTSC color gamut of 122.5 (CIE-1931) for display applications, color rendering index of 88.6, luminous efficacy of optical radiation value of 290 lm/Wopt and color temperature of 2763 K for lighting applications.

  1. Formation and properties of selected quantum dots in maize amylopectin matrix

    Energy Technology Data Exchange (ETDEWEB)

    Khachatryan, Karen, E-mail: rrchacza@cyf-kr.edu.pl [Department of Chemistry and Physics, Agricultural University, Balicka Street 122, 30 149 Krakow (Poland); Khachatryan, Gohar; Fiedorowicz, Maciej [Department of Chemistry and Physics, Agricultural University, Balicka Street 122, 30 149 Krakow (Poland); Tomasik, Piotr [Krakow College of Health Promotion, Krowoderska Street 73, 31 158 Krakow (Poland)

    2014-09-01

    Highlights: • Synthesis of quantum dots in aqueous gel of amylopectin. • Generation of quantum dots in non-ionic polysaccharide. • Preparation of CdS, Ga{sub 2}S{sub 3} and ZnS quantum dots of the size below 10 nm. • The amylopectin matrix is not suitable for generation of CaS and Cs{sub 2}S quantum dots. - Abstract: CdS, ZnS, Ga{sub 2}S{sub 3}, CaS and Cs{sub 2}S quantum dots (QDs) were generated in the amylopectin (Ap) matrix. They all emitted a light between 460 (ZnS) and 475 (CdS) nm. Sizes of Ga{sub 2}S{sub 3} and CdS QDs were 7–9 nm and 5–7 nm, respectively. Single ZnS QDs had 6–7 nm but they readily aggregated. The CaS and Cs{sub 2}S appeared mainly as 30–100 nm aggregates. There were no significant interactions between QDs and the Ap matrix. Presented method appeared unsuitable for the generation of CaS and Cs{sub 2}S QDs as they as well as their substrates [Ca(NO{sub 3}){sub 2}] hydrolyzed. Calcium compounds formed complexes with Ap and alkaline solution from CsOH could produce cesium salts of Ap as well as cause oxidation of Ap.

  2. Submonolayer Quantum Dot Infrared Photodetector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  3. Polarization of the photoluminescence of quantum dots incorporated into quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Platonov, A. V., E-mail: alexei.platonov@mail.ioffe.ru; Kochereshko, V. P.; Kats, V. N.; Cirlin, G. E.; Bouravleuv, A. D.; Avdoshina, D. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Delga, A.; Besombes, L.; Mariette, H. [CEA, INAC, SP2M, and Institut Néel, CEA-CNRS group “Nanophysique et Semiconducteurs” (France)

    2016-12-15

    The photoluminescence spectra of individual quantum dots incorporated into a quantum wire are studied. From the behavior of the spectra in a magnetic field, it is possible to estimate the exciton binding energy in a quantum dot incorporated into a quantum wire. It is found that the exciton photoluminescence signal emitted from a quantum dot along the direction of the nanowire axis is linearly polarized. At the same time, the photoluminescence signal propagating in the direction orthogonal to the nanowire axis is practically unpolarized. The experimentally observed effect is attributed to the nonaxial arrangement of the dot in the wire under conditions of a huge increase in the exciton binding energy due to the effect of the image potential on the exciton.

  4. Coffee-Ring-Free Quantum Dot Thin Film Using Inkjet Printing from a Mixed-Solvent System on Modified ZnO Transport Layer for Light-Emitting Devices.

    Science.gov (United States)

    Jiang, Congbiao; Zhong, Zhiming; Liu, Baiquan; He, Zhiwei; Zou, Jianhua; Wang, Lei; Wang, Jian; Peng, JunBiao; Cao, Yong

    2016-10-05

    Inkjet printing has been considered an available way to achieve large size full-color RGB quantum dots LED display, and the key point is to obtain printed film with uniform and flat surface profile. In this work, mixed solvent of 20 vol % 1,2-dichlorobenzene (oDCB) with cyclohexylbenzene (CHB) was used to dissolve green quantum dots (QDs) with CdSe@ZnS/ZnS core/shell structure. Then, by inkjet printing, a flat dotlike QDs film without the coffee ring was successfully obtained on polyetherimide (PEI)-modified ZnO layer, and the printed dots array exhibited great stability and repeatability. Here, adding oDCB into CHB solutions was used to reduce surface tension, and employing ZnO nanoparticle layer with PEI-modified was used to increase the surface free energy. As a result, a small contact angle is formed, which leads to the enhancement of evaporation rate, and then the coffee ring effect was suppressed. The printed dots with flat surface profile were eventually realized. Moreover, inverted green QD-LEDs with PEI-modified ZnO film as electron transport layer (ETL) and printed green QDs film as emission layer were successfully fabricated. The QD-LEDs exhibited the maximum luminance of 12 000 cd/m2 and the peak current efficiency of 4.5 cd/A at luminance of 1500 cd/m2.

  5. Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

    Energy Technology Data Exchange (ETDEWEB)

    Kurtze, H.; Bayer, M. [Experimentelle Physik 2, TU Dortmund, D-44221 Dortmund (Germany)

    2016-07-04

    Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

  6. A review of nano-optics in metamaterial hybrid heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  7. AlInAs quantum dots

    Science.gov (United States)

    Gaisler, A. V.; Derebezov, I. A.; Gaisler, V. A.; Dmitriev, D. V.; Toropov, A. I.; Kozhukhov, A. S.; Shcheglov, D. V.; Latyshev, A. V.; Aseev, A. L.

    2017-01-01

    A system of quantum dots on the basis of AlxIn1-xAs/AlyGa1-y As solid solutions has been studied. The usage of broadband AlxIn1-x solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlxIn1-xAs quantum dots grown according to the Stranski-Krastanov mechanism are studied by the cryogenic microphotoluminescence method. The fine structure of exciton states of quantum dots is studied in the wavelength region near 770 nm. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of AlxAs1-x quantum dots.

  8. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

    Science.gov (United States)

    Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

    Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

  9. Inorganic passivation and doping control in colloidal quantum dot photovoltaics

    KAUST Repository

    Hoogland, Sjoerd H.

    2012-01-01

    We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.

  10. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  11. Few-quantum-dot lasing in photonic crystal nanocavities

    DEFF Research Database (Denmark)

    Liu, Jin; Ates, Serkan; Stobbe, Søren

    2012-01-01

    A very smooth lasing transition in photonic crystal nanocavities with embedded quantum dots is observed and compared to the theory. Decay rate measurements reveal that only a few quantum dots are feeding the cavity....

  12. Exceeding Conventional Photovoltaic Efficiency Limits Using Colloidal Quantum Dots

    Science.gov (United States)

    Pach, Gregory F.

    Colloidal quantum dots (QDs) are a widely investigated field of research due to their highly tunable nature in which the optical and electronic properties of the nanocrystal can be manipulated by merely changing the nanocrystal's size. Specifically, colloidal quantum dot solar cells (QDSCs) have become a promising candidate for future generation photovoltaic technology. Quantum dots exhibit multiple exciton generation (MEG) in which multiple electron-hole pairs are generated from a single high-energy photon. This process is not observed in bulk-like semiconductors and allows for QDSCs to achieve theoretical efficiency limits above the standard single-junction Shockley-Queisser limit. However, the fast expanding field of QDSC research has lacked standardization of synthetic techniques and device design. Therefore, we sought to detail methodology for synthesizing PbS and PbSe QDs as well as photovoltaic device fabrication techniques as a fast track toward constructing high-performance solar cells. We show that these protocols lead toward consistently achieving efficiencies above 8% for PbS QDSCs. Using the same methodology for building single-junction photovoltaic devices, we incorporated PbS QDs as a bottom cell into a monolithic tandem architecture along with solution-processed CdTe nanocrystals. Modeling shows that near-peak tandem device efficiencies can be achieved across a wide range of bottom cell band gaps, and therefore the highly tunable band gap of lead-chalcogenide QDs lends well towards a bottom cell in a tandem architecture. A fully functioning monolithic tandem device is realized through the development of a ZnTe/ZnO recombination layer that appropriately combines the two subcells in series. Multiple recent reports have shown nanocrystalline heterostructures to undergo the MEG process more efficiency than several other nanostrucutres, namely lead-chalcogenide QDs. The final section of my thesis expands upon a recent publication by Zhang et. al., which

  13. Coherence and dephasing in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan

    2003-01-01

    We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...... coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneours broadening mechanism in the latter....

  14. Modulation Response of Semiconductor Quantum Dot Nanocavity Lasers

    DEFF Research Database (Denmark)

    Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble.......The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble....

  15. Carbon quantum dots and a method of making the same

    Science.gov (United States)

    Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

    2017-08-22

    The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

  16. Parallel carbon nanotube quantum dots and their interactions

    OpenAIRE

    Goss K.; Leijnse M.; Smerat S.; Wegewijs M.R.; Schneider C.M.; Meyer C

    2012-01-01

    We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances from parallel side dots appear, which exhibit a weak gate coupling. This differential gating effect provides a tunability of the quantum dot system with only one gate electrode and provides control over the carbon nanotube strand that carries the current. By t...

  17. Angiogenic Profiling of Synthesized Carbon Quantum Dots.

    Science.gov (United States)

    Shereema, R M; Sruthi, T V; Kumar, V B Sameer; Rao, T P; Shankar, S Sharath

    2015-10-20

    A simple method was employed for the synthesis of green luminescent carbon quantum dots (CQDs) from styrene soot. The CQDs were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared, and Raman spectroscopy. The prepared carbon quantum dots did not show cellular toxicity and could successfully be used for labeling cells. We also evaluated the effects of carbon quantum dots on the process of angiogenesis. Results of a chorioallantoic membrane (CAM) assay revealed the significant decrease in the density of branched vessels after their treatment with CQDs. Further application of CQDs significantly downregulated the expression levels of pro-angiogenic growth factors like VEGF and FGF. Expression of VEGFR2 and levels of hemoglobin were also significantly lower in CAMs treated with CQDs, indicating that the CQDs inhibit angiogenesis. Data presented here also show that CQDs can selectively target cancer cells and therefore hold potential in the field of cancer therapy.

  18. Bright infrared LEDs based on colloidal quantum-dots

    KAUST Repository

    Sun, Liangfeng

    2013-01-01

    Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.

  19. Covalent functionalized black phosphorus quantum dots

    Science.gov (United States)

    Scotognella, Francesco; Kriegel, Ilka; Sassolini, Simone

    2018-01-01

    Black phosphorus (BP) nanostructures enable a new strategy to tune the electronic and optical properties of this atomically thin material. In this paper we show, via density functional theory calculations, the possibility to modify the optical properties of BP quantum dots via covalent functionalization. The quantum dot selected in this study has chemical formula P24H12 and has been covalent functionalized with one or more benzene rings or anthracene. The effect of functionalization is highlighted in the absorption spectra, where a red shift of the absorption is noticeable. The shift can be ascribed to an electron delocalization in the black phosphorus/organic molecule nanostructure.

  20. Cadmium telluride quantum dots advances and applications

    CERN Document Server

    Donegan, John

    2013-01-01

    Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign

  1. Potential clinical applications of quantum dots

    Science.gov (United States)

    Medintz, Igor L; Mattoussi, Hedi; Clapp, Aaron R

    2008-01-01

    The use of luminescent colloidal quantum dots in biological investigations has increased dramatically over the past several years due to their unique size-dependent optical properties and recent advances in biofunctionalization. In this review, we describe the methods for generating high-quality nanocrystals and report on current and potential uses of these versatile materials. Numerous examples are provided in several key areas including cell labeling, biosensing, in vivo imaging, bimodal magnetic-luminescent imaging, and diagnostics. We also explore toxicity issues surrounding these materials and speculate about the future uses of quantum dots in a clinical setting. PMID:18686776

  2. Transmission and scarring in graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Huang Liang; Lai Yingcheng; Ferry, David K; Akis, Richard; Goodnick, Stephen M [Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 (United States)

    2009-08-26

    We study electronic transport in quantum-dot structures made of graphene. Focusing on the rectangular dot geometry and utilizing the non-equilibrium Green's function to calculate the transmission in the tight-binding framework, we find significant fluctuations in the transmission as a function of the electron energy. The fluctuations are correlated with the formation of quantum scarring states, or pointer states in the dot. Both enhancement and suppression of transmission have been observed. As the size of the quantum dot is increased, more scarring states can be formed, leading to stronger transmission or conductance fluctuations.

  3. Spin qubits in graphene quantum dots

    OpenAIRE

    Trauzettel, Björn; Bulaev, Denis V.; Loss, Daniel; Burkard, Guido

    2006-01-01

    We propose how to form spin qubits in graphene. A crucial requirement to achieve this goal is to find quantum dot states where the usual valley degeneracy in bulk graphene is lifted. We show that this problem can be avoided in quantum dots based on ribbons of graphene with semiconducting armchair boundaries. For such a setup, we find the energies and the exact wave functions of bound states, which are required for localized qubits. Additionally, we show that spin qubits in graphene can not on...

  4. Fabrication and characterization of electrostatic Si /SiGe quantum dots with an integrated read-out channel

    Science.gov (United States)

    Sakr, M. R.; Jiang, H. W.; Yablonovitch, E.; Croke, E. T.

    2005-11-01

    A nontraditional fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel, and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represents a step toward the spin-based quantum bit in Si /SiGe heterostructures.

  5. Eco-friendly intracellular biosynthesis of CdS quantum dots without changing Escherichia coli's antibiotic resistance.

    Science.gov (United States)

    Yan, Zheng-Yu; Du, Qing-Qing; Qian, Jing; Wan, Dong-Yu; Wu, Sheng-Mei

    2017-01-01

    In the paper, a green and efficient biosynthetical technique was reported for preparing cadmium sulfide (CdS) quantum dots, in which Escherichia coli (E. coli) was chosen as a biomatrix. Fluorescence emission spectra and fluorescent microscopic photographs revealed that as-produced CdS quantum dots had an optimum fluorescence emission peak located at 470nm and emitted a blue-green fluorescence under ultraviolet excitation. After extracted from bacterial cells and located the nanocrystals' foci in vivo, the CdS quantum dots showed a uniform size distribution by transmission electron microscope. Through the systematical investigation of the biosynthetic conditions, including culture medium replacement, input time point of cadmium source, working concentrations of raw inorganic ions, and co-cultured time spans of bacteria and metal ions in the bio-manufacture, the results revealed that CdS quantum dots with the strongest fluorescence emission were successfully prepared when E. coli cells were in stationary phase, with the replacement of culture medium and following the incubation with 1.0×10-3mol/L cadmium source for 2 days. Results of antimicrobial susceptibility testing indicated that the sensitivities to eight types of antibiotics of E. coli were barely changed before and after CdS quantum dots were prepared in the mild temperature environment, though a slight fall of antibiotic resistance could be observed, suggesting hinted the proposed technique of producing quantum dots is a promising environmentally low-risk protocol. Copyright © 2016 Elsevier Inc. All rights reserved.

  6. Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

    Science.gov (United States)

    Woolf, Alexander; Puchtler, Tim; Aharonovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel; Hu, Evelyn L

    2014-09-30

    Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we use the distinctive, high-quality (Q ∼ 5,500) modes of the cavities, and the change in the highest-intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems but also shed insight into the more fundamental issues of light-matter coupling in such systems.

  7. Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots.

    Science.gov (United States)

    Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S; Schmidt, Oliver G; Rastelli, Armando; Trotta, Rinaldo

    2017-05-26

    The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

  8. Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

    Science.gov (United States)

    Huber, Daniel; Reindl, Marcus; Huo, Yongheng; Huang, Huiying; Wildmann, Johannes S.; Schmidt, Oliver G.; Rastelli, Armando; Trotta, Rinaldo

    2017-01-01

    The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. PMID:28548081

  9. Nonresonant feeding of photonic crystal nanocavity modes by quantum dots

    Science.gov (United States)

    Laucht, A.; Hauke, N.; Neumann, A.; Günthner, T.; Hofbauer, F.; Mohtashami, A.; Müller, K.; Böhm, G.; Bichler, M.; Amann, M.-C.; Kaniber, M.; Finley, J. J.

    2011-05-01

    We experimentally probe the nonresonant feeding of photons into the optical mode of a two dimensional photonic crystal nanocavity from the discrete emission from a quantum dot. For a strongly coupled system of a single exciton and the cavity mode, we track the detuning-dependent photoluminescence intensity of the exciton-polariton peaks at different lattice temperatures. At low temperatures we observe a clear asymmetry in the emission intensity depending on whether the exciton is at higher or lower energy than the cavity mode. At high temperatures this asymmetry vanishes when the probabilities to emit or absorb a phonon become similar. For a different dot-cavity system where the cavity mode is detuned by ΔE >5 meV to lower energy than the single exciton transitions emission from the mode remains correlated with the quantum dot as demonstrated unambiguously by cross-correlation photon counting experiments. By monitoring the temporal evolution of the photoluminescence spectrum, we show that feeding of photons into the mode occurs from multi-exciton transitions. We observe a clear anti-correlation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces toward the single exciton level while the intensity of the mode emission tracks the multi-exciton transitions.

  10. Spin-wave excitations in quantum dots

    Science.gov (United States)

    Lipparini, Enrico; Serra, Llorenç

    1998-03-01

    The transverse response function for a quantum dot in a uniform magnetic field B is calculated using current-density-functional theory. The poles corresponding to the ΔLz=+/-1 and ΔSz=+/-1 spin waves are investigated as a function of B.

  11. Orbital current mode in elliptical quantum dots

    Science.gov (United States)

    Serra, Llorenç; Puente, Antonio; Lipparini, Enrico

    1999-11-01

    An orbital current mode peculiar to deformed quantum dots is theoretically investigated; first by using a simple model that makes it possible to analytically interpret its main characteristics, and second, by numerically solving the microscopic equations of time evolution after an initial perturbation within the time-dependent local-spin-density approximation. Results for different deformations and sizes are shown.

  12. Adiabatic pumping through interacting quantum dots

    OpenAIRE

    Splettstoesser, Janine; Governale, Michele; König, Jürgen; Fazio, Rosario

    2005-01-01

    We present a general formalism to study adiabatic pumping through interacting quantum dots. We derive a formula that relates the pumped charge to the local, instantaneous Green function of the dot. This formula is then applied to the infinite-U Anderson model both for weak and strong tunnel-coupling strengths.

  13. Competing interactions in semiconductor quantum dots

    NARCIS (Netherlands)

    van den Berg, R.; Brandino, G.P.; El Araby, O.; Konik, R.M.; Gritsev, V.; Caux, J.S.

    2014-01-01

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free-induction decay and spin-echo simulations

  14. Decoherence in Nearly-Isolated Quantum Dots

    DEFF Research Database (Denmark)

    Folk, J.; M. Marcus, C.; Harris jr, J.

    2000-01-01

    Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single...

  15. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman M.

    2015-05-28

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

  16. Quantum dot devices for optical communications

    DEFF Research Database (Denmark)

    Mørk, Jesper

    2005-01-01

    Semiconductor quantum dots are often described as "artificial atoms": They are small nanometre-sized structures in which electrons only are allowed to exist at certain discrete levels due to size quantization, thus allowing the engineering of fundamental properties such as the coupling to light. ...

  17. Assembling quantum dots via critical Casimir forces

    NARCIS (Netherlands)

    Marino, E.; Kodger, T.E.; Hove, J.B. ten; Velders, A.H.; Schall, P.

    2016-01-01

    Programmed assembly of colloidal inorganic nanocrystal superstructures is crucial for the realization of future artificial solids as well as present optoelectronic applications. Here, we present a new way to assemble quantum dots reversibly using binary solvents. By tuning the temperature and

  18. Doppler broadening effects in plasmonic quantum dots

    Science.gov (United States)

    Alves, R. A.; Silva, Nuno A.; Costa, J. C.; Gomes, M.; Guerreiro, A.

    2017-08-01

    In this paper we analyse the effects of the Doppler shift on the optical response of a nanoplasmonic system. Through the development of a simplified model based on the Hydrodynamic Drude model we analyse the response of a quantum dot embed in a moving fluid, predicting the Doppler broadening and the shift of the spectral line.

  19. Quantum dot waveguides: ultrafast dynamics and applications

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2009-01-01

    In this paper we analyze, based on numerical simulations, the dynamics of semiconductor devices incorporating quantum dots (QDs). In particular we emphasize the unique ultrafast carrier dynamics occurring between discrete QD bound states, and its influence on QD semiconductor optical amplifiers...

  20. Quantum-dot infrared photodetectors: a review

    Science.gov (United States)

    Stiff-Roberts, Adrienne D.

    2009-04-01

    Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (>=150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non-uniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.

  1. Enabling biomedical research with designer quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Janczewski, D.; Dorokhin, D.V.; Han, M-Y; Vancso, Gyula J.; Navarro, Melba; Planell, Josep A.

    2012-01-01

    Quantum Dots (QDs) are a new class of semiconductor nanoparticulate luminophores, which are actively researched for novel applications in biology and nanomedicine. In this review, the recent progress in the design and applications of QD labels for in vitro and in vivo imaging of cells is presented.

  2. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  3. Thermoelectric properties of hexagonal graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Yonghong, E-mail: yhyan@fudan.edu.cn [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Liang, Qi-Feng [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Zhao, Hui [Department of Physics, Tongji University, Shanghai 200092 (China); Wu, Chang-Qin [Department of Physics, Fudan University, Shanghai 200433 (China)

    2012-02-27

    By using the atomistic nonequilibrium Green's function method, we investigate the thermoelectric properties of graphene nanoribbons in the presence of two constrictions (or hexagonal graphene quantum dots). With decreasing widths of the constrictions, the thermal conductance of the nanoribbon can be reduced largely while S{sup 2}G{sub e} (S is the Seebeck coefficient and G{sub e} is the electronic conductance) remains still high as compared with the results of the pristine nanoribbon. Thus, the thermoelectric figure of merit ZT can be enhanced largely. In fact, in the presence of narrowest constrictions the ZT values of the zigzag quantum dots can exceed one at room temperature, while the ZT values of the armchair quantum dots may be close to one, depending on the size of the dot. -- Highlights: ► We study thermoelectric properties of hexagonal graphene quantum dots. ► By point contacts to two leads, the thermal conductance can be reduced greatly while keeping the power factor still high. ► Thermoelectric figure of merit (ZT) can exceed unity.

  4. Electron Scattering in Intrananotube Quantum Dots

    NARCIS (Netherlands)

    Buchs, G.; Bercioux, D.; Ruffieux, P.; Gröning, P.; Grabert, H.; Gröning, O.

    2009-01-01

    Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200 meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar+ irradiation. Fourier-transform scanning tunneling spectroscopy compared to results of a Fabry-Perot electron

  5. Ostwald's ripening of nanostructures with quantum dots

    CERN Document Server

    Vengrenovich, R D; Yarema, S V

    2001-01-01

    The scenario of quantum dots shaping during ripening three-dimensional islands obtained by heteroepitaxy in a Stranski-Krastanow mode, is offered. It is shown that throughout the growth of dislocations with their subsequent separation from the island bottom, the size distribution function becomes narrower with noticeable diminishing the dispersion. The possible reasons for signal attenuation of Ostwald's ripening islands are analyzed

  6. Optical properties of quantum-dot-doped liquid scintillators.

    Science.gov (United States)

    Aberle, C; Li, J J; Weiss, S; Winslow, L

    2013-10-14

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.

  7. Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors

    Science.gov (United States)

    Barve, A. V.; Sengupta, S.; Kim, J. O.; Sharma, Y. D.; Adhikary, S.; Rotter, T. J.; Lee, S. J.; Kim, Y. H.; Krishna, S.

    2011-11-01

    We demonstrate the use of thin AlGaAs barrier layers in the quantum dots in a well heterostructure to enhance the quantum confinement of carriers in the excited energy level, while maintaining high escape probability. This is achieved by controlling the excited state energy between the confinement enhancing (CE) barriers and the continuum level. Responsivity of ˜0.1 A/W, detectivity of 6.5 × 1010 cmHz1/2 W-1 (77 K, 0.6 V, 7.5 µm, f/2), and a factor of 10 improvement over a control sample without the CE barriers have been measured. The effect of changing the quantum well thickness and quantum dot size is also reported.

  8. Exciton in vertically coupled type II quantum dots in threading magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Cantillo, J., E-mail: jhofry@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Carrera 32 No 22-08, Santa Marta (Colombia); Universidad de la Guajira, Riohacha (Colombia); Escorcia-Salas, G. Elizabeth, E-mail: elizabethescorcia@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Carrera 32 No 22-08, Santa Marta (Colombia); Mikhailov, I.D., E-mail: mikhail2811@gmail.com [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia); Sierra-Ortega, J., E-mail: jsierraortega@gmail.com [Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Carrera 32 No 22-08, Santa Marta (Colombia)

    2014-11-15

    We analyze the energy spectrum of a neutral exciton confined in a semiconductor heterostructure formed by two vertically coupled axially symmetrical type II quantum dots located close to each other. The electron in the structure is mainly located inside dots tunneling between them while the hole generally is placed in the exterior region close to the symmetry axis. Solutions of the Schrödinger equation are obtained by a variational separation of variables in the adiabatic limit. Numerical results are presented for the energies of bonding and anti-bonding lowest-lying of the exciton states and for the density of states for different InP/GaInP quantum dots' morphologies and the magnetic field strength values.

  9. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots.

    Science.gov (United States)

    Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G

    2015-12-01

    Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

  10. Utilization of down-shifting photoluminescent ZnO quantum dots on solar cells

    Science.gov (United States)

    Zazueta-Raynaud, A.; Lopez-Delgado, R.; Pelayo-Ceja, J. E.; Alvarez-Ramos, M. E.; Ayon, A.

    2017-07-01

    We report on the synthesis of photo luminescent zinc oxide (ZnO) quantum dots, their deployment on the window side of photovoltaic structures and the measured influence on the power conversion efficiency. Down-shifting effects were characterized by exciting the synthesized nanostructures with photons in the 340-350 nm range, and measuring the wavelength of the emitted photons observed to be ~500 nm. The colloidal ZnO quantum dots were synthesized in an ethanol-based solution, obtaining different sized nanostructures centered at 4 nm, optically recognizable by their emission in various colors. Subsequently, different concentrations of zinc oxide quantum dots were prepared and dispersed in poly-methyl-methacrylate (PMMA) to be spin cast on the window side of previously characterized solar cells. The observations made to date indicate an improvement of ~4.8% in the PCE. In this work, we discuss the results obtained and suggest pathways to further increase the power conversion efficiency of photovoltaic devices employing quantum dots.

  11. Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology.

    Science.gov (United States)

    Han, Hau-Vei; Lin, Huang-Yu; Lin, Chien-Chung; Chong, Wing-Cheung; Li, Jie-Ru; Chen, Kuo-Ju; Yu, Peichen; Chen, Teng-Ming; Chen, Huang-Ming; Lau, Kei-May; Kuo, Hao-Chung

    2015-12-14

    Colloidal quantum dots which can emit red, green, and blue colors are incorporated with a micro-LED array to demonstrate a feasible choice for future display technology. The pitch of the micro-LED array is 40 μm, which is sufficient for high-resolution screen applications. The method that was used to spray the quantum dots in such tight space is called Aerosol Jet technology which uses atomizer and gas flow control to obtain uniform and controlled narrow spots. The ultra-violet LEDs are used in the array to excite the red, green and blue quantum dots on the top surface. To increase the utilization of the UV photons, a layer of distributed Bragg reflector was laid down on the device to reflect most of the leaked UV photons back to the quantum dot layers. With this mechanism, the enhanced luminous flux is 194% (blue), 173% (green) and 183% (red) more than that of the samples without the reflector. The luminous efficacy of radiation (LER) was measured under various currents and a value of 165 lm/Watt was recorded.

  12. Polyelectrolyte carbon quantum-dots: new player as a noninvasive imaging probe in Drosophila.

    Science.gov (United States)

    Parvin, Nragish; Mandal, Tapas K; Roy, Partha

    2013-10-01

    It is since long that X-ray or magnetic resonance imaging is being used for biomedical diagnosis. But till date noninvasive soft tissue imaging is not very well established. Towards this end the dietary uptake of polyelectrolyte carbon quantum dots (PECQDs) and their uses as a fluorescent probe is a new approach for imaging live specimens. In the present study we demonstrate that polyelectrolyte carbon quantum dots, which are nontoxic and have fluorescence properties can be used for in vivo imaging of internal organs. Carbon quantum dots surface were abound in polymer of free carboxyl groups making it water soluble. Our used PECQDs are less than equal to 50 nm sized and are capable to emit multi colour fluorescence. It is synthesized from waste plant materials like shaded leaves, unused shrubs, herbs etc. An exposure of 1 ppm level of soluble carbon quantum dots for 12 hours in drosophila permitted the fluorescence microscopy imaging of the different stages of their development and their non invasive internal organs without any remarkable toxic effects. Finally the fluorescent material was found to be excreted out of the animals. The current data suggests that visualization of internal organs with a fluorescent probe in live cells could help in determining the efficacy of therapeutic treatments directly without the need of any invasive procedures.

  13. Photoluminescence enhancement of quantum dots on Ag nanoneedles.

    Science.gov (United States)

    Ahmed, Syed Rahin; Cha, Hee Ryoung; Park, Jung Youn; Park, Enoch Y; Lee, Dongyun; Lee, Jaebeom

    2012-08-07

    Noble metal nanostructure allows us to tune optical and electrical properties, which has high utility for real-world application. We studied surface plasmon-induced emission of semiconductor quantum dots (QDs) on engineered metallic nanostructures. Highly passive organic ZnS-capped CdSe QDs were spin-coated on poly-(methyl methacrylate)-covered Ag films, which brought QDs near the metallic surface. We obtained the enhanced electromagnetic field and reduced fluorescence lifetimes from CdSe/ZnS QDs due to the strong coupling of emitter wave function with the Ag plasmon resonance. Observed changes include a six-fold increase in the fluorescence intensity and striking reduction in fluorescence lifetimes of CdSe/ZnS QDs on rough Ag nanoneedle compared to the case of smooth surfaces. The advantages of using those nanocomposites are expected for high-efficiency light-emitting diodes, platform fabrication of biological and environmental monitoring, and high-contrast imaging.

  14. Fluorescent labeling of cells and biomolecules with nanocrystal quantum dots

    Science.gov (United States)

    Hoshino, Akiyoshi; Fujioka, Kouki; Suga, Masakazu; Sasaki, Yu F.; Ohta, Toshihiro; Yasuhara, Masato; Dohi, Taeko; Suzuki, Kazuo; Yamamoto, Kenji

    2005-04-01

    Fluorescent nanoparticles, such as nanocrystal quantum dots (QDs), novel nanometer-size probes and have the potential to be used as easy imaging tool for molecular biology and bioimaging including medical applications, since some nanocrystals emit higher and far longer fluorescence than conventional organic probes. QDs are now becoming widely used in biotechnology and medical applications. QDs have several advantages over organic fluorophores with regard to high luminescence, stability against photobleaching, and a range of fluorescence wavelengths from blue to infrared depending on the particle size. In this review, we reported labeling of some kinds of immune cells and biomolecules with several QDs coated with hydrophilic carboxyl/amine groups, and reported that we could image the circulation of mouse lymphocytes in vivo by QDs. In addition, we also reported here about the cytotoxicity of these nanocrystals.

  15. Quantum-Dot-Based Telecommunication-Wavelength Quantum Relay

    Science.gov (United States)

    Huwer, J.; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Felle, M.; Farrer, I.; Ritchie, D. A.; Penty, R. V.

    2017-08-01

    The development of quantum relays for long-haul and attack-proof quantum communication networks operating with weak coherent laser pulses requires entangled photon sources at telecommunication wavelengths with intrinsic single-photon emission for most practical implementations. Using a semiconductor quantum dot emitting entangled photon pairs in the telecommunication O band, we demonstrate a quantum relay fulfilling both of these conditions. The system achieves a maximum fidelity of 94.5% for implementation of a standard four-state protocol with input states generated by a laser. We further investigate robustness against frequency detuning of the narrow-band input and perform process tomography of the teleporter, revealing operation for arbitrary pure input states, with an average gate fidelity of 83.6%. The results highlight the potential of semiconductor light sources for compact and robust quantum-relay technology that is compatible with existing communication infrastructures.

  16. Growth parameter optimization for fast quantum dot SESAMs.

    Science.gov (United States)

    Maas, D J H C; Bellancourt, A-R; Hoffmann, M; Rudin, B; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2008-11-10

    Semiconductor saturable absorber mirrors (SESAMs) using quantum dot (QD) absorbers exhibit a larger design freedom than standard quantum well absorbers. The additional parameter of the dot density in combination with the field enhancement allows for an independent control of saturation fluence and modulation depth. We present the first detailed study of the effect of QD growth parameters and post growth annealing on the macroscopic optical SESAM parameters, measuring both nonlinear reflectivity and recombination dynamics. We studied a set of self-assembled InAs QD-SESAMs optimized for an operation wavelength around 960 nm with varying dot density and growth temperature. We confirm that the modulation depth is controlled by the dot density. We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs).

  17. Bandgap engineering of coal-derived graphene quantum dots.

    Science.gov (United States)

    Ye, Ruquan; Peng, Zhiwei; Metzger, Andrew; Lin, Jian; Mann, Jason A; Huang, Kewei; Xiang, Changsheng; Fan, Xiujun; Samuel, Errol L G; Alemany, Lawrence B; Martí, Angel A; Tour, James M

    2015-04-01

    Bandgaps of photoluminescent graphene quantum dots (GQDs) synthesized from anthracite have been engineered by controlling the size of GQDs in two ways: either chemical oxidative treatment and separation by cross-flow ultrafiltration, or by a facile one-step chemical synthesis using successively higher temperatures to render smaller GQDs. Using these methods, GQDs were synthesized with tailored sizes and bandgaps. The GQDs emit light from blue-green (2.9 eV) to orange-red (2.05 eV), depending on size, functionalities and defects. These findings provide a deeper insight into the nature of coal-derived GQDs and demonstrate a scalable method for production of GQDs with the desired bandgaps.

  18. In a "nutshell": intrinsically radio-labeled quantum dots.

    Science.gov (United States)

    Cai, Weibo; Hong, Hao

    2012-01-01

    Quantum dots (QDs) have many intriguing properties suitable for biomedical imaging applications. The poor tissue penetration of optical imaging in general, including those using QDs, has motivated the development of various QD-based dual-modality imaging agents. In this issue of AJNMMI (http://www.ajnmmi.us), Sun et al. reported the synthesis and in vitro/in vivo characterization of intrinsically radio-labeled QDs (r-QDs), where (109)Cd was incorporated into the core/shell of QDs of various compositions. These r-QDs emit in the near-infrared range, have long circulation half-life, are quite stable with low cytotoxicity, exhibit small size and low accumulation in the reticuloendothelial system, and can allow for accurate measurement of their biodistribution in mice. With these desirable features demonstrated in this study, future development and optimization will further enhance the biomedical potential of intrinsically radio-labeled QDs.

  19. Study of exciton transfer in dense quantum dot nanocomposites

    Science.gov (United States)

    Guzelturk, Burak; Hernandez-Martinez, Pedro Ludwig; Sharma, Vijay Kumar; Coskun, Yasemin; Ibrahimova, Vusala; Tuncel, Donus; Govorov, Alexander O.; Sun, Xiao Wei; Xiong, Qihua; Demir, Hilmi Volkan

    2014-09-01

    Nanocomposites of colloidal quantum dots (QDs) integrated into conjugated polymers (CPs) are key to hybrid optoelectronics, where engineering the excitonic interactions at the nanoscale is crucial. For such excitonic operation, it was believed that exciton diffusion is essential to realize nonradiative energy transfer from CPs to QDs. In this study, contrary to the previous literature, efficient exciton transfer is demonstrated in the nanocomposites of dense QDs, where exciton transfer can be as efficient as 80% without requiring the assistance of exciton diffusion. This is enabled by uniform dispersion of QDs at high density (up to ~70 wt%) in the nanocomposite while avoiding phase segregation. Theoretical modeling supports the experimental observation of weakly temperature dependent nonradiative energy transfer dynamics. This new finding provides the ability to design hybrid light-emitting diodes that show an order of magnitude enhanced external quantum efficiencies.Nanocomposites of colloidal quantum dots (QDs) integrated into conjugated polymers (CPs) are key to hybrid optoelectronics, where engineering the excitonic interactions at the nanoscale is crucial. For such excitonic operation, it was believed that exciton diffusion is essential to realize nonradiative energy transfer from CPs to QDs. In this study, contrary to the previous literature, efficient exciton transfer is demonstrated in the nanocomposites of dense QDs, where exciton transfer can be as efficient as 80% without requiring the assistance of exciton diffusion. This is enabled by uniform dispersion of QDs at high density (up to ~70 wt%) in the nanocomposite while avoiding phase segregation. Theoretical modeling supports the experimental observation of weakly temperature dependent nonradiative energy transfer dynamics. This new finding provides the ability to design hybrid light-emitting diodes that show an order of magnitude enhanced external quantum efficiencies. Electronic supplementary

  20. Quantum Dot Devices for Optical Signal Processing

    DEFF Research Database (Denmark)

    Chen, Yaohui

    with other semiconductor materials. The understanding of such properties is important in order to improve the performance of existing devices and to trigger the development of new semiconductor devices for dierent optical signal processing functionalities in the future. We present a detailed quantum dot...... and the continuum. Additional to the conventional time-domain modeling scheme, a small-signal perturbation analysis has been used to assist the investigation of harmonic modulation properties. The static properties of quantum dot devices, for example high saturation power, have been quantitatively analyzed....... Additional to the static linear amplication properties, we focus on exploring the gain dynamics on the time scale ranging from sub-picosecond to nanosecond. In terms of optical signals that have been investigated, one is the simple sinusoidally modulated optical carrier with a typical modulation frequency...

  1. Double quantum dots defined in bilayer graphene

    Science.gov (United States)

    Żebrowski, D. P.; Peeters, F. M.; Szafran, B.

    2017-07-01

    Artificial molecular states of double quantum dots defined in bilayer graphene are studied with the atomistic tight-binding method and its low-energy continuum approximation. We indicate that the extended electron wave functions have opposite parities on sublattices of the layers and that the ground-state wave-function components change from bonding to antibonding with the interdot distance. In the weak-coupling limit, the one most relevant for quantum dots defined electrostatically, the signatures of the interdot coupling include, for the two-electron ground state, formation of states with symmetric or antisymmetric spatial wave functions split by the exchange energy. In the high-energy part of the spectrum the states with both electrons in the same dot are found with the splitting of energy levels corresponding to simultaneous tunneling of the electron pair from one dot to the other.

  2. Magnon cotunneling through a quantum dot

    Science.gov (United States)

    Karwacki, Łukasz

    2017-11-01

    I consider a single-level quantum dot coupled to two reservoirs of spin waves (magnons). Such systems have been studied recently from the point of view of possible coupling between electronic and magnonic spin currents. However, usually weakly coupled systems were investigated. When coupling between the dot and reservoirs is not weak, then higher order processes play a role and have to be included. Here I consider cotunneling of magnons through a spin-occupied quantum dot, which can be understood as a magnon (spin) leakage current in analogy to leakage currents in charge-based electronics. Particular emphasis has been put on investigating the effect of magnetic field and temperature difference between the magnonic reservoirs.

  3. Hole spin relaxation in quantum dots

    Science.gov (United States)

    Woods, L. M.; Reinecke, T. L.; Kotlyar, R.

    2004-03-01

    We present results for relaxation of the spin of a hole in a cylindrical quantum dot due to acoustic phonon assisted spin flips at low temperatures with an applied magnetic field. The hole dispersion is calculated by numerical diagonalization of the Luttinger Hamiltonian and applying perturbation theory with respect to the magnetic field, and the hole-phonon coupling is described by the Bir-Pikus Hamiltonian. We find that the decoherence time for hole spins for dots ≲20 nm is on the order of 10-8 s. This is several orders smaller than the decoherence time due to phonon assisted processes for electron spins in similar dots and is comparable to the total decoherence time of an electron spin in a quantum dot, which is controlled by the hyperfine interaction with nuclei. We obtain the dependence of the relaxation rate of the hole spin on dot size and hole mass.

  4. Expanding the multicolor capabilities of basic confocal microscopes by employing red and near-infrared quantum dot conjugates

    Directory of Open Access Journals (Sweden)

    Schaefer Brian C

    2009-05-01

    Full Text Available Abstract Background Confocal microscopy is a widely employed methodology in cellular biology, commonly used for investigating biological organization at the cellular and sub-cellular level. Most basic confocal microscopes are equipped to cleanly discriminate no more than four fluorophores in a given sample, limiting the utility of this method for co-localization, co-expression, and other multi-parameter analyses. In this study, we evaluated the use of red and near-infrared emitting quantum dot staining reagents to expand the multi-parameter capabilities of basic confocal microscopes. Results We modified a three-laser Zeiss Pascal confocal microscope by the addition of two band-pass filters and one long-pass filter for the detection of three different red to near-infrared quantum dot conjugates. We then performed direct comparisons between organic dye- and quantum dot-labeled detection reagents for the detection of subcellular structures. We found that the quality of staining was generally indistinguishable, although quantum dot reagents do have certain limitations, relative to organic dye conjugates. Using the modified Pascal system, three quantum dot conjugates, two organic dye conjugates, and one fluorescent protein, we demonstrated clean discrimination of six distinct fluorescent labels in a single sample. Conclusion Our data demonstrate that nearly any basic confocal microscope can be modified by the simple addition of appropriate emission filters, allowing the detection of red and near-infrared quantum dot conjugates. Additionally, quantum dot- and organic dye-based secondary reagents can be successfully combined in complex intracellular staining experiments. Substantial expansion of the multi-parameter capabilities of basic confocal instruments can be achieved with a financial investment that is minimal in comparison to instrument replacement or upgrade with additional lasers.

  5. Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot-quantum well structures emitting at telecom spectral range

    Science.gov (United States)

    Rudno-Rudziński, W.; Biegańska, D.; Misiewicz, J.; Lelarge, F.; Rousseau, B.; Sek, G.

    2018-01-01

    We investigate the diffusion of photo-generated carriers (excitons) in hybrid two dimensional-zero dimensional tunnel injection structures, based on strongly elongated InAs quantum dots (called quantum dashes, QDashes) of various heights, designed for emission at around 1.5 μm, separated by a 3.5 nm wide barrier from an 8 nm wide In0.64Ga0.36As0.78P0.22 quantum well (QW). By measuring the spectrally filtered real space images of the photoluminescence patterns with high resolution, we probe the spatial extent of the emission from QDashes. Deconvolution with the exciting light spot shape allows us to extract the carrier/exciton diffusion lengths. For the non-resonant excitation case, the diffusion length depends strongly on excitation power, pointing at carrier interactions and phonons as its main driving mechanisms. For the case of excitation resonant with absorption in the adjacent QW, the diffusion length does not depend on excitation power for low excitation levels since the generated carriers do not have sufficient excess kinetic energy. It is also found that the diffusion length depends on the quantum-mechanical coupling strength between QW and QDashes, controlled by changing the dash size. It influences the energy difference between the QDash ground state of the system and the quantum well levels, which affects the tunneling rates. When that QW-QDash level separation decreases, the probability of capturing excitons generated in the QW by QDashes increases, which is reflected by the decreased diffusion length from approx. 5 down to 3 μm.

  6. Near-infrared emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: synthesis and bright luminescence

    Science.gov (United States)

    2012-01-01

    We present how CdTe0.5Se0.5 cores can be coated with Cd0.5Zn0.5S shells at relatively low temperature (around 200°C) via facile synthesis using organic ammine ligands. The cores were firstly fabricated via a less toxic procedure using CdO, trioctylphosphine (TOP), Se, Te, and trioctylamine. The cores with small sizes (3.2-3.5 nm) revealed green and yellow photoluminescence (PL) and spherical morphologies. Hydrophobic core/shell CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots (QDs) with tunable PL between green and near-infrared (a maximum PL peak wavelength of 735 nm) were then created through a facile shell coating procedure using trioctylphosphine selenium with cadmium and zinc acetate. The QDs exhibited high PL efficiencies up to 50% because of the formation of a protective Cd0.5Zn0.5S shell on the CdTe0.5Se0.5 core, even though the PL efficiency of the cores is low (≤1%). Namely, the slow growth process of the shell plays an important role for getting high PL efficiencies. The properties of the QDs are largely determined by the properties of CdTe0.5Se0.5 cores and shells preparation conditions such as reaction temperature and time. The core/shell QDs exhibited a small size diameter. For example, the average diameter of the QDs with a PL peak wavelength of 735 nm is 6.1 nm. Small size and tunable bright PL makes the QDs utilizable as bioprobes because the size of QD-based bioprobes is considered as the major limitation for their broad applications in biological imaging. PMID:23130948

  7. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia

    2015-10-13

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Transverse dipole spin modes in quantum dots

    Science.gov (United States)

    Lipparini, E.; Barranco, M.; Emperador, A.; Pi, M.; Serra, Ll.

    1999-09-01

    We have carried out a systematic analysis of the transverse dipole spin response of a large-size quantum dot within time-dependent current density functional theory. Results for magnetic fields corresponding to integer filling factors are reported, as well as a comparison with the longitudinal dipole spin response. As in the two-dimensional electron gas, the spin response at high-spin magnetization is dominated by a low-energy transverse mode.

  9. Spin response of unpolarized quantum dots

    Science.gov (United States)

    Serra, L.; Lipparini, E.

    1997-12-01

    The spin response function for electrons confined in a quantum dot is studied within the time-dependent local spin density approximation (TDLSDA) of density functional theory. In the long-wavelength regime we predict the existence of a low-energy collective dipole (ell = 1) spin mode. The evolution with electron number of the spin response is studied and compared with that of the density response. Predictions for the static dipole polarizability are given.

  10. Pharmaceutical and biomedical applications of quantum dots.

    Science.gov (United States)

    Bajwa, Neha; Mehra, Neelesh K; Jain, Keerti; Jain, Narendra K

    2016-05-01

    Quantum dots (QDs) have captured the fascination and attention of scientists due to their simultaneous targeting and imaging potential in drug delivery, in pharmaceutical and biomedical applications. In the present study, we have exhaustively reviewed various aspects of QDs, highlighting their pharmaceutical and biomedical applications, pharmacology, interactions, and toxicological manifestations. The eventual use of QDs is to dramatically improve clinical diagnostic tests for early detection of cancer. In recent years, QDs were introduced to cell biology as an alternative fluorescent probe.

  11. Dark pulse quantum dot diode laser.

    Science.gov (United States)

    Feng, Mingming; Silverman, Kevin L; Mirin, Richard P; Cundiff, Steven T

    2010-06-21

    We describe an operating regime for passively mode-locked quantum dot diode laser where the output consists of a train of dark pulses, i.e., intensity dips on a continuous background. We show that a dark pulse train is a solution to the master equation for mode-locked lasers. Using simulations, we study stability of the dark pulses and show they are consistent with the experimental results.

  12. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Effective surface passivation of multi-shelled InP quantum dots through a simple complexing with titanium species

    Science.gov (United States)

    Jo, Jung-Ho; Kim, Min-Seok; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2018-01-01

    Fluorescent efficiency of various visible quantum dots (QDs) has been incessantly improved to meet industrially high standard mainly through the advance in core/shell heterostructural design, however, their stability against degradable environments appears still lacking. The most viable strategy to cope with this issue was to exploit chemically inert oxide phases to passivate QD surface in the form of either individual overcoating or matrix embedding. Herein, we report a simple but effective means to passivate QD surface by complexing its organic ligands with a metal alkoxide of titanium isopropoxide (Ti(i-PrO)4). For this, highly efficient red-emitting InP QDs with a multi-shell structure of ZnSeS intermediate plus ZnS outer shell are first synthesized and then the surface of resulting InP/ZnSeS/ZnS QDs is in-situ decorated with Ti(i-PrO)4. The presence of Tisbnd O species from Ti(i-PrO)4 on QD surface is verified by x-ray photoelectron and Fourier transform infrared spectroscopic analyses. Two comparative dispersions of pristine versus Ti(i-PrO)4-complexed QDs are exposed for certain periods of time to UV photon and heat and their temporal changes in photoluminescence are monitored, resulting in a huge improvement in QD stability from the latter ones through Ti(i-PrO)4-mediated better surface passivation.

  14. Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.

    Science.gov (United States)

    Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni

    2017-03-22

    We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.

  15. Quantum Dots and Their Multimodal Applications: A Review

    Science.gov (United States)

    Bera, Debasis; Qian, Lei; Tseng, Teng-Kuan; Holloway, Paul H.

    2010-01-01

    Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence) or electric field (electroluminescence). In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

  16. Single quantum dots fundamentals, applications, and new concepts

    CERN Document Server

    2003-01-01

    This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.

  17. Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    LI Zhi-min

    2017-08-01

    Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.

  18. Probing relaxation times in graphene quantum dots

    Science.gov (United States)

    Volk, Christian; Neumann, Christoph; Kazarski, Sebastian; Fringes, Stefan; Engels, Stephan; Haupt, Federica; Müller, André; Stampfer, Christoph

    2013-01-01

    Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dots have been extensively investigated with respect to their excitation spectrum, spin-filling sequence and electron-hole crossover. However, their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular concerning the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here we report pulsed-gate transient current spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design that allows to individually tune the tunnelling barriers down to the low megahertz regime, while monitoring their asymmetry. Measuring transient currents through electronic excited states, we estimate a lower bound for charge relaxation times on the order of 60–100 ns. PMID:23612294

  19. Molecularly imprinted polymer-coated quantum dots for multiplexed cell targeting and imaging

    OpenAIRE

    Panagiotopoulou, Maria; Salinas, Yolanda; Beyazit, Selim; Kunath, Stephanie; Duma, Luminita; Prost, Elise; Mayes, Andrew G.; Resmini, Marina; Tse Sum Bui, Bernadette; Haupt, Karsten

    2016-01-01

    Advanced tools for cell imaging are of great interest to detect, localize and quantify molecular biomarkers of cancer or infection. We describe a novel photopolymerization method to coat quantum dots (QDs) with polymer shells, in particular molecularly imprinted polymers (MIPs), using the visible light emitted from QDs excited by UV light. Fluorescent core-shell particles specifically recognizing glucuronic acid (GlcA) or N-acetylneuraminic acid (NANA) were prepared. Simultaneous multiplexed ...

  20. In situ electron-beam polymerization stabilized quantum dot micelles.

    Science.gov (United States)

    Travert-Branger, Nathalie; Dubois, Fabien; Renault, Jean-Philippe; Pin, Serge; Mahler, Benoit; Gravel, Edmond; Dubertret, Benoit; Doris, Eric

    2011-04-19

    A polymerizable amphiphile polymer containing PEG was synthesized and used to encapsulate quantum dots in micelles. The quantum dot micelles were then polymerized using a "clean" electron beam process that did not require any post-irradiation purification. Fluorescence spectroscopy revealed that the polymerized micelles provided an organic coating that preserved the quantum dot fluorescence better than nonpolymerized micelles, even under harsh conditions. © 2011 American Chemical Society

  1. White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Sadaf JR

    2010-01-01

    Full Text Available Abstract We report the fabrication of heterostructure white light–emitting diode (LED comprised of n-ZnO nanotubes (NTs aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour.

  2. White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode.

    Science.gov (United States)

    Sadaf, J R; Israr, Mq; Kishwar, S; Nur, O; Willander, M

    2010-04-04

    We report the fabrication of heterostructure white light-emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet-blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour.

  3. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael

    2008-12-17

    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  4. Finite element modelling of threading dislocation effect on polar GaN/AlN quantum dot

    Science.gov (United States)

    Jurczak, Grzegorz; Dłużewski, Paweł

    2018-01-01

    In this paper the effect of adjacent threading dislocation at the edge of the GaN/AlN quantum dot is analysed by use of the finite element analysis. Elastic as well electric effects related to dislocation core are taken into account. Two types of threading dislocations: edge- and screw-type, common for III-nitride epitaxial layers, are considered. Also, three different QD geometries are considered to estimate the impact of the threading dislocation on the quantum heterostructure. It is demonstrated that the local elastic and electric fields around dislocation affect local piezoelectric fields built-in the quantum dot. Local lattice deformation near the dislocation core reduce residual strains in the quantum dot. It is prominent in the case of edge-type dislocation. The presence of an electric charge along dislocation line provides significant shift of the total potential towards the negative values. However, estimated difference in band-to-band transition energy for edge- and screw-type dislocations are rather small, what suggest low sensitivity to the charge density along dislocation line. Unexpectedly, local strain field around the edge-type dislocation, slightly compensate the negative affect of the electrostatic potential.

  5. Influence of semiconductor-dielectric transition border on the electron states in spherical quantum dots.

    CERN Document Server

    Ghazaryan, E M; Sarkisyan, H A

    2002-01-01

    Electron states in spherical quantum dots are studied, taking into account boundary conditions. The threshold habit of level appearance inside the quantum dots is revealed. The electron energy dependences on the quantum dots radius and confinement potential height

  6. Application of Inkjet Printing in High-Density Pixelated RGB Quantum Dot-Hybrid LEDs

    KAUST Repository

    Haverinen, Hanna

    2012-05-23

    Recently, an intriguing solution to obtain better color purity has been to introduce inorganic emissive quantum dots (QDs) into an otherwise OLED structure. The emphasis of this chapter is to present a simple discussion of the first attempts to fabricate high-density, pixelated (quarter video graphics array (QVGA) format), monochromatic and RGB quantum dots light-emitting diodes (QDLEDs), where inkjet printing is used to deposit the light-emitting layer of QDs. It shows some of the factors that have to be considered in order to achieve the desired accuracy and printing quality. The successful operation of the RGB printed devices indicates the potential of the inkjet printing approach in the fabrication of full-color QDLEDs for display application. However, further optimization of print quality is still needed in order to eliminate the formation of pinholes, thus maximizing energy transfer from organic layers to the QDs and in turn increasing the performance of the devices. Controlled Vocabulary Terms: ink jet printing; LED displays; LED lamps; organic light emitting diodes; quantum dots

  7. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  8. Imaging ligand-gated ion channels with quantum dots

    Science.gov (United States)

    Tomlinson, I. D.; Orndorff, Rebecca L.; Gussin, Hélène; Mason, John N.; Blakely, Randy D.; Pepperberg, David R.; Rosenthal, Sandra J.

    2007-02-01

    In this paper we report two different methodologies for labeling ligand-gated receptors. The first of these builds upon our earlier work with serotonin conjugated quantum dots and our studies with pegilated quantum dots to reduce non specific binding. In this approach a pegilated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphillic polymer derivative of poly acrylamide. These conjugates were used to image the GABA C receptor in oocytes. An alternative approach was used to image tissue sections to study nicotinic acetylcholine receptors in the neuro muscular junction with biotinylated Bungerotoxin and streptavidin coated quantum dots.

  9. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    See, Gloria G. [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States); Xu, Lu; Nuzzo, Ralph G. [Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801 (United States); Sutanto, Erick; Alleyne, Andrew G. [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, 154 Mechanical Engineering Building, Urbana, Illinois 61801 (United States); Cunningham, Brian T. [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States); Department of Bioengineering, University of Illinois at Urbana-Champaign, 1270 Digital Computer Laboratory, MC-278, Urbana, Illinois 61801 (United States)

    2015-08-03

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.

  10. Comparative analysis of germanium–silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

    Science.gov (United States)

    Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

    2018-02-01

    In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium–silicon–tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski–Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

  11. Graphene quantum dots with nitrogen-doped content dependence for highly efficient dual-modality photodynamic antimicrobial therapy and bioimaging.

    Science.gov (United States)

    Kuo, Wen-Shuo; Chen, Hua-Han; Chen, Shih-Yao; Chang, Chia-Yuan; Chen, Pei-Chi; Hou, Yung-I; Shao, Yu-Ting; Kao, Hui-Fang; Lilian Hsu, Chih-Li; Chen, Yi-Chun; Chen, Shean-Jen; Wu, Shang-Rung; Wang, Jiu-Yao

    2017-03-01

    Reactive oxygen species is the main contributor to photodynamic therapy. The results of this study show that a nitrogen-doped graphene quantum dot, serving as a photosensitizer, was capable of generating a higher amount of reactive oxygen species than a nitrogen-free graphene quantum dot in photodynamic therapy when photoexcited for only 3 min of 670 nm laser exposure (0.1 W cm -2 ), indicating highly improved antimicrobial effects. In addition, we found that higher nitrogen-bonding compositions of graphene quantum dots more efficiently performed photodynamic therapy actions than did the lower compositions that underwent identical treatments. Furthermore, the intrinsically emitted luminescence from nitrogen-doped graphene quantum dots and high photostability simultaneously enabled it to act as a promising contrast probe for tracking and localizing bacteria in biomedical imaging. Thus, the dual modality of nitrogen-doped graphene quantum dots presents possibilities for future clinical applications, and in particular multidrug resistant bacteria. Copyright © 2016 Elsevier Ltd. All rights reserved.

  12. Development of homogeneous binding assays based on fluorescence resonance energy transfer between quantum dots and Alexa Fluor fluorophores.

    Science.gov (United States)

    Nikiforov, Theo T; Beechem, Joseph M

    2006-10-01

    We studied the fluorescence resonance energy transfer (FRET) between quantum dots emitting at 565, 605, and 655 nm as energy donors and Alexa Fluor fluorophores with absorbance maxima at 594, 633, 647, and 680 nm as energy acceptors. As a first step, we prepared covalent conjugates between all three types of quantum dots and each of the Alexa Fluor fluorophores that could act as an energy acceptor. All of these conjugates displayed efficient resonance energy transfer. Then we prepared covalent conjugates of these quantum dots with biotin, fluorescein, and cortisol and established that the binding of these conjugates to suitable Alexa Fluor-labeled antibodies and streptavidin (in the case of biotin) can be efficiently detected by measuring the resonance energy transfer in homogeneous solutions. Finally, based on these observations, competitive binding assays for these three small analytes were developed. The performance of these assays as a function of the degree of labeling of the quantum dots was evaluated. It was found that decreasing the degree of loading of the quantum dots leads to decreases of the limits of detection. The results show the great potential of this FRET system for the development of new homogeneous binding assays.

  13. ZnO-nanowires/PANI inorganic/organic heterostructure light-emitting diode.

    Science.gov (United States)

    He, Ying; Wang, Jun-an; Zhang, Wenfei; Song, Jizhong; Pei, Changlong; Chen, Xiaoban

    2010-11-01

    In this paper, we report a flexible inorganic/organic heterostructure light-emitting diode, in which inorganic ZnO nanowires are the optically active components and organic polyaniline (PANI) is the hole-transporting layer. The fabrication of the hybrid LED is as follows, the ordered single-crystalline ZnO nanowires were uniformly distributed on flexible polyethylene terephthalate (PET)-based indium-tin-oxide-coated substrates by our polymer-assisted growth method, and proper materials were chosen as electrode and carrier. In this construction, an array of ZnO nanowires grown on PET substrate is successfully embedded in a polyaniline thin film. The performance of the hybrid device of organic-inorganic hetero-junction of ITO/(ZnO nanowires-PANI) for LED application in the blue and UV ranges are investigated, and tunable electroluminescence has been demonstrated by contacting the upper tips of ZnO nanowires and the PET substrate. The effect of surface capping with polyvinyl alcohol (PANI) on the photocarrier relaxation of the aqueous chemically grown ZnO nanowires has been investigated. The photoluminescence spectrum shows an enhanced ultraviolet emission and reduced defect-related emission in the capped ZnO NWs compared to bare ZnO. The results of our study may offer a fundamental understanding in the field of inorganic/organic heterostructure light-emitting diode, which may be useful for potential applications of hybrid ZnO nanowires with conductive polymers.

  14. Theoretical Study of Operational Limits of High-Speed Quantum Dot Lasers

    Science.gov (United States)

    2012-09-09

    strained -layer InGaAs quantum - well improvement of an InAs quantum dot AlGaAs –GaAs– InGaAs –InAs... AlGaAs –GaAs– InGaAs heterostructure diode laser operation Appl. Phys. Lett. 80 1126–8 [20] Walter G, Chung T and Holonyak N 2002 Coupled-stripe quantum - well ...8] Tokranov V, Yakimov M, van Eisden J and Oktyabrsky S 2006 Tunnel quantum well -on-dots InGaAs –InAs high-gain medium for laser diodes Proc.

  15. Coherent transport through interacting quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hiltscher, Bastian

    2012-10-05

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  16. Realization of electrically tunable single quantum dot nanocavities

    Energy Technology Data Exchange (ETDEWEB)

    Hofbauer, Felix Florian Georg

    2009-03-15

    We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

  17. Ultrafast downconversion quantum interface for a single quantum dot spin and 1550-nm single-photon channel

    Science.gov (United States)

    Yu, L.; Pelc, J. S.; de Greve, K.; McMahon, P. L.; Fejer, M. M.; Yamamoto, Y.; Maier, S.; Schneider, C.; Kamp, M.; Hofling, S.; Forchel, A.; Natarajan, C. M.; Hadfield, R. H.

    2013-03-01

    Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. Quantum frequency conversion (QFC), whereby a photonic qubit's carrier frequency is translated while maintaining its quantum state, is well-suited to the task. Quantum dots have been studied extensively as potential quantum network nodes, but they do not emit indistinguishable single photons at telecomm wavelengths. We report an ultrafast, low-noise downconversion quantum interface, in which 910-nm single photons from a quantum dot are downconverted to the 1.5- μm lowest-loss telecom band, showing near-perfect preservation of antibunched photon statistics. Moreover, the resulting time resolution could also improve photon indistinguishability. Together with the III-V semiconductor quantum dot spin system, this ultrafast downconversion quantum interface provides new possibility to realize long-distance quantum communication networks.

  18. Delivery of gene-expressing fragments using quantum dot

    Science.gov (United States)

    Hoshino, Akiyoshi; Manabe, Noriyoshi; Hanada, Sanshiro; Fujioka, Kouki; Yasuhara, Masato; Kondo, Akihiko; Yamamoto, Kenji

    2009-02-01

    Gene therapy is an attractive approach to supplement a deficient gene function. Although there has been some success with specific gene delivery using various methods including viral vectors and liposomes, most of these methods have a limited efficiency or also carry a risk for oncogenesis. Fluorescent nanoparticles, such as nanocrystal quantum dots (QDs), have potential to be applied to molecular biology and bioimaging, since some nanocrystals emit higher and longer lasting fluorescence than conventional organic probes do. We herein report that quantum dots (QDs) conjugated with nuclear localizing signal peptides (NLSP) successfully introduced the gene-fragments with promoter elements, which promoted the expression of the enhanced green fluorescent protein (eGFP) gene in mammalian cells. The expression of eGFP protein was observed when the QD/geneconstruct was added to the culture media. The gene-expression efficiency varied depending on multiple factors around QDs, such as 1) the reading direction of gene fragments, 2) the quantity of gene fragments attached on the surface of QD-constructs, 3) the surface electronic charges varied according to the structure of QD/gene-constructs, and 4) the particle size of QD/gene complex varied according to the structure and amounts of gene fragments. Using this QD/geneconstruct system, eGFP protein could be detected 28 days after the gene-introduction whereas the fluorescence of QDs was disappeared. This system therefore provides another method for the intracellular delivery of gene-fragments without using either viral vectors or specific liposomes. These results suggest that inappropriate treatment and disposal of QDs may still have risks to the environmental pollution including human health under certain conditions. Here we propose the further research for the immune and physiological responses in not only immune cells but also other cells, in order to clear the effect of all other nanoscale products as well as nanocrystal

  19. A monolithically integrated plasmonic infrared quantum dot camera.

    Science.gov (United States)

    Lee, Sang Jun; Ku, Zahyun; Barve, Ajit; Montoya, John; Jang, Woo-Yong; Brueck, S R J; Sundaram, Mani; Reisinger, Axel; Krishna, Sanjay; Noh, Sam Kyu

    2011-01-01

    In the past few years, there has been increasing interest in surface plasmon-polaritons, as a result of the strong near-field enhancement of the electric fields at a metal-dielectric interface. Here we show the first demonstration of a monolithically integrated plasmonic focal plane array (FPA) in the mid-infrared region, using a metal with a two-dimensional hole array on top of an intersubband quantum-dots-in-a-well (DWELL) heterostructure FPA coupled to a read-out integrated circuit. Excellent infrared imagery was obtained with over a 160% increase in the ratio of the signal voltage (V(s)) to the noise voltage (V(n)) of the DWELL camera at the resonant wavelength of λ=6.1 μm. This demonstration paves the way for the development of a new generation of pixel-level spectropolarimetric imagers, which will enable bio-inspired (for example, colour vision) infrared sensors with enhanced detectivity (D) or higher operating temperatures.

  20. Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

    Science.gov (United States)

    Lüker, S.; Kuhn, T.; Reiter, D. E.

    2017-12-01

    Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

  1. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities

    Science.gov (United States)

    Hafiz, Shopan din Ahmad

    InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1-xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving more efficient visible light emitters and terahertz generating nanocavities and in colloidal Ge1-xSnx quantum dots (QDs) for developing efficient silicon compatible optoelectronics. To alleviate the electron overflow, which through strong experimental evidence is revealed to be the dominating mechanism responsible for efficiency degradation at high injection in InGaN based blue LEDs, different strategies involving electron injectors and optimized active regions have been developed. Effectiveness of optimum electron injector (EI) layers in reducing electron overflow and increasing quantum efficiency of InGaN based LEDs was demonstrated by photoluminescence (PL) and electroluminescence spectroscopy along with numerical simulations. Increasing the two-layer EI thickness in double heterostructure LEDs substantially reduced the electron overflow and increased external quantum efficiency (EQE) by three fold. By incorporating delta p-doped InGaN barriers in multiple quantum well (MQW) LEDs, 20% enhancement in EQE was achieved due to improved hole injection without degrading the layer quality. Carrier diffusion length, an important physical parameter that directly affects the performance of optoelectronic devices, was measured in epitaxial GaN using PL spectroscopy. The obtained diffusion lengths at room

  2. Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties

    Energy Technology Data Exchange (ETDEWEB)

    Sinclair, Michael B. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Fan, Hongyou [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Brener, Igal [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Liu, Sheng [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Luk, Ting S. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Li, Binsong [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. During the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.

  3. Exploring the Physics of Semiconductor Quantum Dots using Circuit Quantum Electrodynamics

    Science.gov (United States)

    Stockklauser, Anna; Maisi, Ville; Ihn, Thomas; Ensslin, Klaus; Wallraff, Andreas

    2015-03-01

    Semiconductor quantum dots and superconducting qubits both possess excitations in the microwave domain for which a wide range of novel approaches to create, store, manipulate and detect individual photons have been developed. A key ingredient are coplanar waveguide resonators in which the field energy of an excitation is distributed over a small mode volume. This feature creates sizable electromagnetic fields at the level of individual microwave photons mediating strong electromagnetic interactions with a variety of quantum systems. In an approach known as circuit quantum electrodynamics (QED) we both probe fundamental quantum optical effects and demonstrate basic features of quantum information processing. In this presentation, I will discuss experiments exploring the physics of semiconductor quantum dots in the context of circuit QED. We investigate the coherent dipole coupling of double dots to microwave photons and detect radiation emitted from the dots in inelastic electron tunneling processes. This approach may allow us to explore quantum coherent interfaces between semiconducting and superconducting qubits.

  4. Unique properties of graphene quantum dots and their applications in photonic/electronic devices

    Science.gov (United States)

    Choi, Suk-Ho

    2017-03-01

    In recent years, graphene quantum dots (GQDs) have been recognized as an attractive building block for electronic, photonic, and bio-molecular device applications. This paper reports the current status of studies on the novel properties of GQDs and their hybrids with conventional and low-dimensional materials for device applications. In this review, more emphasis is placed on the structural, electronic, and optical properties of GQDs, and device structures based on the combination of GQDs with various semiconducting/insulating materials such as graphene, silicon dioxide, Si quantum dots, silica nanoparticles, organic materials, and so on. Because of GQDs’ unique properties, their hybrid structures are employed in high-efficiency devices, including photodetectors, solar cells, light-emitting diodes, flash memory, and sensors.

  5. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex

    2012-07-29

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  6. Andreev molecules in semiconductor nanowire double quantum dots

    NARCIS (Netherlands)

    Su, Zhaoen; Tacla, Alexandre B.; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R.; Bakkers, E.P.A.M.; Daley, Andrew J.; Pekker, David; Frolov, Sergey M.

    2017-01-01

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum

  7. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  8. Electron-hole confinement symmetry in silicon quantum dots

    NARCIS (Netherlands)

    Müller, F.; Mueller, Filipp; Konstantaras, Georgios; Spruijtenburg, P.C.; van der Wiel, Wilfred Gerard; Zwanenburg, Floris Arnoud

    2015-01-01

    We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron−hole confinement symmetry is

  9. Synthesis of Cesium Lead Halide Perovskite Quantum Dots

    Science.gov (United States)

    Shekhirev, Mikhail; Goza, John; Teeter, Jacob D.; Lipatov, Alexey; Sinitskii, Alexander

    2017-01-01

    Synthesis of quantum dots is a valuable experiment for demonstration and discussion of quantum phenomena in undergraduate chemistry curricula. Recently, a new class of all-inorganic perovskite quantum dots (QDs) with a formula of CsPbX[subscript 3] (X = Cl, Br, I) was presented and attracted tremendous attention. Here we adapt the synthesis of…

  10. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot

    DEFF Research Database (Denmark)

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal

    2016-01-01

    We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offe...

  11. Stark effect and polarizability of graphene quantum dots

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

  12. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has dev...

  13. Magnetoconductivity of quantum dots with Rashba interaction

    Science.gov (United States)

    Lipparini, E.; Barranco, M.; Malet, F.; Pi, M.

    2009-03-01

    We address the magnetoconductivity of a quantum dot with Rashba spin-orbit interaction within linear-response theory. As a consequence of the generalized Kohn’s theorem, the magnetoconductivity of the dot is zero when the spin-orbit coupling is neglected. The inclusion of the spin-orbit interaction violates the mentioned theorem and gives rise to a nonzero magnetoconductivity. We derive a simple expression for this quantity valid up to the second order in the Rashba parameter. In the limit of vanishing lateral confinement, i.e., for a quantum well, a similar calculation yields the quantum Hall-effect result.

  14. Moment of inertia in elliptical quantum dots

    Science.gov (United States)

    Serra, Llorenç; Puente, Antonio; Lipparini, Enrico

    The moment of inertia of deformed quantum dots and its experimental relevance in relation to the dot spectroscopic features is theoretically investigated. A strong link to the low-energy orbital current mode that manifests in the magnetic dipole (M1) spectrum is stressed. The moment of inertia is obtained by solving the cranked Kohn-Sham equations within the local-spin-density approximation and the results discussed in comparison with the predictions of an analytical non-interacting model. The results as a function of deformation and size indicate that the existence of spin transitions in the dot ground state has an important effect on the moment of inertia.

  15. Mitigation of quantum dot cytotoxicity by microencapsulation.

    Science.gov (United States)

    Romoser, Amelia; Ritter, Dustin; Majitha, Ravish; Meissner, Kenith E; McShane, Michael; Sayes, Christie M

    2011-01-01

    When CdSe/ZnS-polyethyleneimine (PEI) quantum dots (QDs) are microencapsulated in polymeric microcapsules, human fibroblasts are protected from acute cytotoxic effects. Differences in cellular morphology, uptake, and viability were assessed after treatment with either microencapsulated or unencapsulated dots. Specifically, QDs contained in microcapsules terminated with polyethylene glycol (PEG) mitigate contact with and uptake by cells, thus providing a tool to retain particle luminescence for applications such as extracellular sensing and imaging. The microcapsule serves as the "first line of defense" for containing the QDs. This enables the individual QD coating to be designed primarily to enhance the function of the biosensor.

  16. Biexciton in nanoheterostructures of germanium quantum dots

    Science.gov (United States)

    Pokutnyi, Sergey I.

    2017-06-01

    The theory of biexciton (formed from spatially separated electrons and holes) in a nanosystem consisting of double quantum dots (QDs) of germanium synthesized in a silicon matrix is presented. It is shown that the major contribution to the biexciton binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes. The position of the biexciton state energy band depends both on the mean radius of the QDs and the distance between their surfaces, which enables one to purposefully control it by varying these parameters of the nanostructure.

  17. Odd triplet superconductivity in ultrasmall quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Weiss, Stephan; Koenig, Juergen [Theoretische Physik, Universitaet Duisburg-Essen and CENIDE (Germany); Sothmann, Bjoern [Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg (Germany)

    2016-07-01

    We report on the possibility to create odd frequency Cooper pairs in proximized interacting quantum dots attached to ferromagnetic leads. Spin blockade effects together with induced superconductivity allow electron pairs with same spin at different times to carry superconducting correlations. Besides the conventional finite singlet pairing amplitude on the dot, only odd frequency triplet pairing is possible here. This is in contrast to the double dot case. We demonstrate how the order parameter for odd-frequency triplet pairing as well as the differential Andreev conductance are influenced when tuning gate and/or bias voltages, the angle of magnetizations of the leads and the coupling to the nearby superconductor.

  18. Mitigation of quantum dot cytotoxicity by microencapsulation.

    Directory of Open Access Journals (Sweden)

    Amelia Romoser

    Full Text Available When CdSe/ZnS-polyethyleneimine (PEI quantum dots (QDs are microencapsulated in polymeric microcapsules, human fibroblasts are protected from acute cytotoxic effects. Differences in cellular morphology, uptake, and viability were assessed after treatment with either microencapsulated or unencapsulated dots. Specifically, QDs contained in microcapsules terminated with polyethylene glycol (PEG mitigate contact with and uptake by cells, thus providing a tool to retain particle luminescence for applications such as extracellular sensing and imaging. The microcapsule serves as the "first line of defense" for containing the QDs. This enables the individual QD coating to be designed primarily to enhance the function of the biosensor.

  19. Protease sensing using nontoxic silicon quantum dots

    Science.gov (United States)

    Cheng, Xiaoyu; McVey, Benjamin F. P.; Robinson, Andrew B.; Longatte, Guillaume; O'Mara, Peter B.; Tan, Vincent T. G.; Thordarson, Pall; Tilley, Richard D.; Gaus, Katharina; Justin Gooding, John

    2017-08-01

    Herein is presented a proof-of-concept study of protease sensing that combines nontoxic silicon quantum dots (SiQDs) with Förster resonance energy transfer (FRET). The SiQDs serve as the donor and an organic dye as the acceptor. The dye is covalently attached to the SiQDs using a peptide linker. Enzymatic cleavage of the peptide leads to changes in FRET efficiency. The combination of interfacial design and optical imaging presented in this work opens opportunities for use of nontoxic SiQDs relevant to intracellular sensing and imaging.

  20. Self-polarization in spherical quantum dot

    Directory of Open Access Journals (Sweden)

    Stojanović Dušanka P.

    2015-01-01

    Full Text Available The electronic structures of CdS quantum dot (QD with dielectric mismatch are calculated. Poisson equation is solved analitically in case of point charge placed inside semiconductor sphere embeded in dielectric matrix in case of different values of the dielectric permittivity of QD and matrix. The validity of the effective mass approximation for the conduction band is assumed. Schrödinger equation for one electron is solved analitically. On the basis of the Poisson equation solution self potential is examined and used as perturbation to calculate the self-polarization effect.

  1. Polymorphic Architectures of Graphene Quantum Dots.

    Science.gov (United States)

    Kim, Sejung; Song, Youngjun; Heller, Michael J

    2017-08-01

    A systematic strategy for designing structured nanomaterials is demonstrated through self-assembly of graphene quantum dots. The approach reveals that graphene derivatives at the nanoscale assemble into various architectures of nanocrystals in a binary solution system. The shapes of the nanocrystals continue to evolve in terms of the intimate association of organic molecules with the dispersion medium, obtaining a high index faceted superlattice. This facile synthetic process provides a versatile strategy for designing particles to new structured materials systems, exploiting the crystallization of layered graphitic carbon structures within single crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Graphene Quantum Dots for Theranostics and Bioimaging.

    Science.gov (United States)

    Schroeder, Kathryn L; Goreham, Renee V; Nann, Thomas

    2016-10-01

    Since their advent in the early 1990s, nanomaterials hold promise to constitute improved technologies in the biomedical area. In particular, graphene quantum dots (GQDs) were conjectured to produce new or improve current methods used for bioimaging, drug delivery, and biomarker sensors for early detection of diseases. This review article critically compares and discusses current state-of-the-art use of GQDs in biology and health sciences. It shows the ability of GQDs to be easily functionalised for use as a targeted multimodal treatment and imaging platform. The in vitro and in vivo toxicity of GQDs are explored showing low toxicity for many types of GQDs.

  3. Non-Markovian coherent feedback control of quantum dot systems

    Science.gov (United States)

    Xue, Shibei; Wu, Rebing; Hush, Michael R.; Tarn, Tzyh-Jong

    2017-03-01

    In this paper we present a non-Markovian coherent feedback scheme for decoherence suppression in single quantum dot systems. The feedback loop is closed via a quantum tunnelling junction between the natural source and drain baths of the quantum dot. The exact feedback-controlled non-Markovian Langevin equation is derived for describing the dynamics of the quantum dot. To deal with the nonlinear memory function in the Langevin equation, we analyse the Green’s function-based root locus, from which we show that the decoherence of the quantum dot can be suppressed via increasing the feedback coupling strength. The effectiveness of decoherence suppression induced by non-Markovian coherent feedback is demonstrated by a single quantum dot example bathed with Lorentzian noises.

  4. Electric and Magnetic Interaction between Quantum Dots and Light

    DEFF Research Database (Denmark)

    Tighineanu, Petru

    a future challenge for the droplet-epitaxy technique. A multipolar theory of spontaneous emission from quantum dots is developed to explain the recent observation that In(Ga)As quantum dots break the dipole theory. The analysis yields a large mesoscopic moment, which contains magnetic-dipole and electric......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...... with second-order correlation measurements and a theoretical model. We measure an oscillator strength of up to 960:8 and an average quantum eciency of (94:83:0)%. This enhanced light-matter coupling is known as the giant oscillator strength of quantum dots, which is shown to be equivalent to superradiance. We...

  5. 3D super-resolution imaging with blinking quantum dots

    Science.gov (United States)

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

    2013-01-01

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

  6. Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg

    Successfully model the decay rates with a microscopic model that allows us to for the first time extract the effective phonon density of states, which we can model with bulk phonons. Studies on a quantum dot detuned from a low-Q mode of a photonic-crystal cavity show a high collection efficiency at the first......In this thesis we have performed quantum-electrodynamics experiments on quantum dots embedded in photonic-crystal cavities. We perform a quantitative comparison of the decay dynamics and emission spectra of quantum dots embedded in a micropillar cavity and a photonic-crystal cavity. The light...... deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...

  7. Three-dimensional Si/Ge quantum dot crystals.

    Science.gov (United States)

    Grützmacher, Detlev; Fromherz, Thomas; Dais, Christian; Stangl, Julian; Müller, Elisabeth; Ekinci, Yasin; Solak, Harun H; Sigg, Hans; Lechner, Rainer T; Wintersberger, Eugen; Birner, Stefan; Holý, Vaclav; Bauer, Günther

    2007-10-01

    Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered

  8. Nonrenewal statistics in transport through quantum dots

    Science.gov (United States)

    Ptaszyński, Krzysztof

    2017-01-01

    The distribution of waiting times between successive tunneling events is an already established method to characterize current fluctuations in mesoscopic systems. Here, I investigate mechanisms generating correlations between subsequent waiting times in two model systems, a pair of capacitively coupled quantum dots and a single-level dot attached to spin-polarized leads. Waiting time correlations are shown to give insight into the internal dynamics of the system; for example they allow distinction between different mechanisms of the noise enhancement. Moreover, the presence of correlations breaks the validity of the renewal theory. This increases the number of independent cumulants of current fluctuation statistics, thus providing additional sources of information about the transport mechanism. I also propose a method for inferring the presence of waiting time correlations based on low-order current correlation functions. This method gives a way to extend the analysis of nonrenewal current fluctuations to the systems for which single-electron counting is not experimentally feasible. The experimental relevance of the findings is also discussed; for example reanalysis of previous results concerning transport in quantum dots is suggested.

  9. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  10. Study of metallothionein-quantum dots interactions.

    Science.gov (United States)

    Tmejova, Katerina; Hynek, David; Kopel, Pavel; Krizkova, Sona; Blazkova, Iva; Trnkova, Libuse; Adam, Vojtech; Kizek, Rene

    2014-05-01

    Nanoparticles have gained increasing interest in medical and in vivo applications. Metallothionein (MT) is well known as a maintainer of metal ions balance in intracellular space. This is due to high affinity of this protein to any reactive species including metals and reactive oxygen species. The purpose of this study was to determine the metallothionein-quantum dots interactions that were investigated by spectral and electrochemical techniques. CuS, CdS, PbS, and CdTe quantum dots (QDs) were analysed. The highest intensity was shown for CdTe, than for CdS measured by fluorescence. These results were supported by statistical analysis and considered as significant. Further, these interactions were analysed using gel electrophoresis, where MT aggregates forming after interactions with QDs were detected. Using differential pulse voltammetry Brdicka reaction, QDs and MT were studied. This method allowed us to confirm spectral results and, moreover, to observe the changes in MT structure causing new voltammetric peaks called X and Y, which enhanced with the prolonged time of interaction up to 6 h. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Nano-laser on silicon quantum dots

    Science.gov (United States)

    Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li

    2011-04-01

    A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.

  12. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.

    2011-11-22

    Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.

  13. Electrostatically confined trilayer graphene quantum dots

    Science.gov (United States)

    Mirzakhani, M.; Zarenia, M.; Vasilopoulos, P.; Peeters, F. M.

    2017-04-01

    Electrically gating of trilayer graphene (TLG) opens a band gap offering the possibility to electrically engineer TLG quantum dots. We study the energy levels of such quantum dots and investigate their dependence on a perpendicular magnetic field B and different types of stacking of the graphene layers. The dots are modeled as circular and confined by a truncated parabolic potential which can be realized by nanostructured gates or position-dependent doping. The energy spectra exhibit the intervalley symmetry EKe(m ) =-EK'h(m ) for the electron (e ) and hole (h ) states, where m is the angular momentum quantum number and K and K ' label the two valleys. The electron and hole spectra for B =0 are twofold degenerate due to the intervalley symmetry EK(m ) =EK'[-(m +1 ) ] . For both ABC [α =1.5 (1.2) for large (small) R ] and ABA (α =1 ) stackings, the lowest-energy levels show approximately a R-α dependence on the dot radius R in contrast with the 1 /R3 one for ABC-stacked dots with infinite-mass boundary. As functions of the field B , the oscillator strengths for dipole-allowed transitions differ drastically for the two types of stackings.

  14. Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

    Science.gov (United States)

    Qiu, Yueming

    2006-01-01

    The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process

  15. Pulse train amplification and regeneration based on semiconductor quantum dots waveguide

    DEFF Research Database (Denmark)

    Chen, Yaohui; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....

  16. Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, Andrea; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.......The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature....

  17. Enhanced thermoelectric properties in boron nitride quantum-dot

    Directory of Open Access Journals (Sweden)

    Changning Pan

    Full Text Available We have investigated the ballistic thermoelectric properties in boron nitride quantum dots by using the nonequilibrium Green’s function approach and the Landauer transport theory. The result shows that the phonon transport is substantially suppressed by the interface in the quantum dots. The resonant tunneling effect of electron leads to the fluctuations of the electronic conductance. It enhances significantly the Seebeck coefficient. Combined with the low thermal conductance of phonon, the high thermoelectric figure of merit ZT ∼0.78 can be obtained at room temperature T = 300 K and ZT ∼0.95 at low temperature T = 100 K. It is much higher than that of graphene quantum dots with the same geometry parameters, which is ZT ∼0.29 at room temperature T = 300 K and ZT ∼0.48 at low temperature T = 100 K. The underlying mechanism is that the boron nitride quantum dots possess higher thermopower and lower phonon thermal conductance than the graphene quantum dots. Thus the results indicate that the thermoelectric properties of boron nitride can be significantly enhanced by the quantum dot and are better than those of graphene. Keywords: Thermoelectric properties, Boron nitride quantum dot, Electron transport, Phonon transport

  18. Light radiating-manipulation in toroidal metamaterial by the gain in quantum dots

    Science.gov (United States)

    Li, Jie; Dong, Zhenggao

    Toroidal dipolar response in a metallic metastructure, composed of double flat rings, is utilized to manipulate the radiation pattern of a single dipolar emitter (e.g., florescent molecule/atom or quantum dot). Strong Fano-type radiation spectrum can be obtained when these two coupling dipoles are spatially overlapped, leading to significant radiation suppression (so-called nonradiating source) attributed to the dipolar destructive interference. Moreover, this nonradiating configuration will become a directionally super-radiating nanoantenna after a radial displacement of the emitter with respect to the toroidal flat-ring geometry, which emits linearly polarized radiation with orders of power enhancement in a particular orientation. Furthermore, via surface plasmon amplification with the assistance of the gain medium of PbS quantum dots, not only toroidal dipole response can be greatly strengthened but also the directional super-radiating intensity also obtains strong enhancement. Our results are promising in manipulating the radiation power and direction of a single emitter, such as fluorescent molecule/atom and quantum dot, by utilizing the intriguing toroidal dipolar response based on the proposed flat-ring metastructure.

  19. Effects of Luttinger leads on the AC conductance of a quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Kai-Hua, E-mail: khy@bjut.edu.cn [College of Applied Sciences, Beijing University of Technology, Beijing 100122 (China); Qin, Chang-Dong [College of Applied Sciences, Beijing University of Technology, Beijing 100122 (China); Wang, Huai-Yu [Department of Physics, Tsinghua University, Beijing 100084 (China); Liu, Kai-Di [College of Applied Sciences, Beijing University of Technology, Beijing 100122 (China)

    2017-04-18

    Highlights: • The system exhibits photon-assisted single- and two-channel Kondo physics, depending on the intralead interaction. • The 1CK and 2CK mechanisms can coexist within a region of the intralead interaction parameter. • In the limit of strong interaction, the differential conductance scales as a power law both in bias voltage and in temperature. - Abstract: We investigate the joint effects of the intralead electron interaction and an external alternating gate voltage on the transport of a quantum dot coupled to two Luttinger liquid leads in the Kondo regime. We find the transferring between two Kondo physics mechanics by investigation of differential conductance. For very weak intralead interaction, the satellite and main Kondo resonant peaks appear in the differential conductance. For moderately strong intralead interaction, all the peaks disappear and evolve into dips, which signifies that a photon-assisted single-channel Kondo (1CK) physics turns into two-channel Kondo (2CK) physics. The 1CK and 2CK mechanisms can coexist within a region of the intralead interaction parameter. The 1CK physics transits to the 2CK one gradually, not suddenly. In the limit of strong interaction, all dips disappear. When the bias voltage is small, there is no photon exchange between the quantum dot and alternative field, and the differential conductance scales as a power law both in bias voltage and in temperature. As the field becomes stronger, the quantum dot will emit and absorb photons.

  20. Enhanced field emission of graphene–ZnO quantum dots hybrid structure

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Lei [Zhicheng College, Fuzhou University, Fuzhou 350002 (China); National & Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002 (China); Zhou, Xiongtu [National & Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002 (China); Zhang, Yongai, E-mail: yongaizhang@fzu.edu.cn [National & Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002 (China); Guo, Tailiang, E-mail: gtl_fzu@hotmail.com [National & Local United Engineer Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002 (China)

    2015-05-25

    Highlights: • ZnO quantum dots decorated graphene by solution process. • The hybrid emitters exhibited efficient field emission properties. • The enhancement is attributed to ZnO quantum dots. - Abstract: The cathode of graphene was prepared by the electrophoretic deposition (EPD) and ZnO quantum dots (QDs) were grown on the surface of graphene sheets by solution method to improve the field emission (FE) properties. The graphene/ZnO QDs hybrid emitters exhibited efficient field emission with lower turn-on field of 0.9 V/μm, lower threshold field of 2.6 V/μm, higher field enhancement factor of 3923 and more stable emission current stability than pristine graphene. The improved field emission performance was attributed to ZnO QDs, which introduce more defects, increase the number of emitting sites and decrease the work function. This investigation proposed that graphene/ZnO QDs composites are promising field cathodes in FE applications.

  1. Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

    Directory of Open Access Journals (Sweden)

    Liang BL

    2007-01-01

    Full Text Available AbstractInAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100, GaAs (100 with a 2° misorientation angle towards [01−1], and GaAs (n11B (n = 9, 7, 5 substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100, which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.

  2. Detection of bioconjugated quantum dots passivated with different ligands for bio-applications.

    Science.gov (United States)

    Singh, Gurpal; Zaidi, Neelam Hazoor; Soni, Udit; Gautam, Manoj; Jackeray, Richa; Singh, Harpal; Sapra, Sameer

    2011-05-01

    Bioconjugation of quantum dots has resulted in a significant increase in resolution of biological fluorescent labeling. This intrinsic property of quantum dots can be utilized for sensitive detection of target analytes with high sensitivity; including pathogenic bacteria and cancer monitoring. The quantum dots and quantum dot doped silica nanoparticles exhibit prominent emission peaks when excited at 400 nm but on conjugation to model rabbit antigoat antibodies exhibit diminished intensity of emission peak at 600 nm. It shows that photoluminescence intensity of conjugated quantum dots and quantum dot doped silica nanoparticles could permit the detection of bioconjugation. Samples of conjugated and unconjugated quantum dots and quantum dot doped silica nanoparticles were subjected to enzyme linked immunosorbent assay for further confirmation of bioconjugation. In the present study ligand exchange, bioconjugation, fluorescence detection of bioconjugated quantum dots and quantum dot doped silica nanoparticles and further confirmation of bioconjugation by enzyme linked immunosorbent assay has been described.

  3. Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles

    Science.gov (United States)

    Tvrdy, Kevin; Frantsuzov, Pavel A.; Kamat, Prashant V.

    2011-01-01

    Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO2, TiO2, and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO2) were not the same as those which showed the highest photocurrent (TiO2). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency. PMID:21149685

  4. Solvothermal synthesis of InP quantum dots.

    Science.gov (United States)

    Nag, Angshuman; Sarma, D D

    2009-09-01

    We report an efficient and fast solvothermal route to prepare highly crystalline monodispersed InP quantum dots. This solvothermal route, not only ensures inert atmosphere, which is strictly required for the synthesis of phase pure InP quantum dots but also allows a reaction temperature as high as 430 degrees C, which is otherwise impossible to achieve using a typical solution chemistry; the higher reaction temperature makes the reaction more facile. This method also has a judicious control over the size of the quantum dots and thus in tuning the bandgap.

  5. Electrostatically defined silicon quantum dots with counted antimony donor implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  6. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    Science.gov (United States)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  7. Electron transport in InAs nanowire quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Fuhrer, Andreas [Nanometer Structure Consortium, Lund Universtity, Box 118, S-221 00 Lund (Sweden); School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Fasth, Carina; Samuelson, Lars [Nanometer Structure Consortium, Lund Universtity, Box 118, S-221 00 Lund (Sweden)

    2008-07-01

    We investigate electron transport in single and double quantum dots defined in catalytically grown InAs nanowires containing down to a single electron. We determine g-factor and strength of the spin-orbit interaction directly from excited state measurements in these few electron quantum dots. Using local gates to deplete homogeneous InAs nanowires offers a high degree of tunability for defining double quantum dots. Here we show that such systems are ideally suited to manipulate single spins and charges for electron pumping, charge read-out and spin manipulation applications.

  8. Tunable RKKY interaction in a double quantum dot nanoelectromechanical device

    Science.gov (United States)

    Parafilo, A. V.; Kiselev, M. N.

    2018-01-01

    We propose a realization of mechanically tunable Ruderman-Kittel-Kasuya-Yosida interaction in a double quantum dot nanoelectromechanical device. The coupling between spins of two quantum dots suspended above a metallic plate is mediated by conduction electrons. We show that the spin-mechanical interaction can be driven by a slow modulation of charge density in the metallic plate. We propose to use Stückelberg oscillations as a sensitive tool for detection of the spin and charge states of the coupled quantum dots. Theory of mechanical back action induced by a dynamical spin-spin interaction is discussed.

  9. Photon-mediated interaction between distant quantum dot circuits.

    Science.gov (United States)

    Delbecq, M R; Bruhat, L E; Viennot, J J; Datta, S; Cottet, A; Kontos, T

    2013-01-01

    Engineering the interaction between light and matter is an important goal in the emerging field of quantum opto-electronics. Thanks to the use of cavity quantum electrodynamics architectures, one can envision a fully hybrid multiplexing of quantum conductors. Here we use such an architecture to couple two quantum dot circuits. Our quantum dots are separated by 200 times their own size, with no direct tunnel and electrostatic couplings between them. We demonstrate their interaction, mediated by the cavity photons. This could be used to scale up quantum bit architectures based on quantum dot circuits or simulate on-chip phonon-mediated interactions between strongly correlated electrons.

  10. Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ian D. Tomlinson

    2007-01-01

    Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.

  11. Optical studies on a single GaAs laterally coupled quantum dot in comparison with an uncoupled quantum dot

    Science.gov (United States)

    Kim, Heedae; Song, Jin Dong

    2018-01-01

    We performed spectroscopy studies on a single GaAs laterally coupled quantum dot and an uncoupled quantum dot. Photoluminescence spectra confirmed the presence of optical coupling in the coupled quantum dot through dipole-dipole interactions. The optical coupling was investigated in terms of the integrated photoluminescence intensities and redshift of emission energies as the excitation power was increased. The excitation intensity was increased with linearly polarized light in the lateral coupling direction 1 1 bar 0 , which resulted in excitons X1 and X2 of the coupled quantum dot showing a clear photoluminescence peak shift to lower energy with drastically different power factors. These results were obtained by integrating the PL spectrum and comparing it to that of a single quantum dot. We also found that the decay rates of X1 and X2 in the coupled quantum dot increased significantly as a consequence of overlap of electron and hole wavefunctions extended via optical coupling in individual dots of the coupled quantum dot system.

  12. Semiconductor quantum dot-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Jianjun Tian

    2013-10-01

    Full Text Available Semiconductor quantum dots (QDs have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1 the effect of quantum confinement on QDSCs, 2 the multiple exciton generation (MEG of QDs, 3 fabrication methods of QDs, and 4 nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  13. Excitonic physics in a Dirac quantum dot

    Science.gov (United States)

    Raca, V.; Milovanović, M. V.

    2017-11-01

    We present a description of vacuum polarization in a circular Dirac quantum dot in two spatial dimensions assuming α —the relative strength of the Coulomb interaction small enough to render an approximation with a single electron (hole) lowest energy level relevant. Applying this approximation, we find that for αc≈1.05 the lowest level is half filled irrespective of the number of flavors that are present. The ground state can be represented as a superposition of particular (even number) excitonic states which constitute an excitonic cloud that evolves in a crossover manner. The ground state is degenerate with an intervalley excitonic state at αc≈1.05 , a critical strength, that in our approximation marks a point with single electron and exciton resonances.

  14. Quantum-dot based photonic quantum networks

    Science.gov (United States)

    Lodahl, Peter

    2018-01-01

    Quantum dots (QDs) embedded in photonic nanostructures have in recent years proven to be a very powerful solid-state platform for quantum optics experiments. The combination of near-unity radiative coupling of a single QD to a photonic mode and the ability to eliminate decoherence processes imply that an unprecedent light–matter interface can be obtained. As a result, high-cooperativity photon-emitter quantum interfaces can be constructed opening a path-way to deterministic photonic quantum gates for quantum-information processing applications. In the present manuscript, I review current state-of-the-art on QD devices and their applications for quantum technology. The overarching long-term goal of the research field is to construct photonic quantum networks where remote entanglement can be distributed over long distances by photons.

  15. Silicon quantum dots for biological applications.

    Science.gov (United States)

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Tellurium quantum dots: Preparation and optical properties

    Science.gov (United States)

    Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

    2017-08-01

    Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

  17. Electronic levels of cubic quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Aristone, Flavio [Federal De Mato Grosso Do Sul Univ., Campo Grande (Brazil); Sanchez-Dehesa, Jose [Autonoma De Madrid Univ., Madrid (Spain); Marques, Gilmar E. [Federal De Sao Carlos Univ., Sao Carlos (Brazil)

    2003-09-01

    We introduce an efficient variational method to solve the three-dimensional Schroedinger equation for any arbitrary potential V(x,y,z). The method uses a basis set of localized functions which are build up as products of one-dimensional cubic {beta}-splines. We calculated the energy levels of GaAs/AlGaAs cubic quantum dots and make a comparison with the results from two well-known simplification schemes based on a decomposition of the full potential problem into three separate one-dimensional problems. We show that the scheme making a sequential decomposition gives eigenvalues in better agreement with the ones obtained variationally, but an exact solution is necessary when looking for highly precise values.

  18. Biosensing with Luminescent Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hedi Mattoussi

    2006-08-01

    Full Text Available Luminescent semiconductor nanocrystals or quantum dots (QDs are a recentlydeveloped class of nanomaterial whose unique photophysical properties are helping tocreate a new generation of robust fluorescent biosensors. QD properties of interest forbiosensing include high quantum yields, broad absorption spectra coupled to narrow sizetunablephotoluminescent emissions and exceptional resistance to both photobleaching andchemical degradation. In this review, we examine the progress in adapting QDs for severalpredominantly in vitro biosensing applications including use in immunoassays, asgeneralized probes, in nucleic acid detection and fluorescence resonance energy transfer(FRET - based sensing. We also describe several important considerations when workingwith QDs mainly centered on the choice of material(s and appropriate strategies forattaching biomolecules to the QDs.

  19. Semiconductor quantum dot-inorganic nanotube hybrids.

    Science.gov (United States)

    Kreizman, Ronen; Schwartz, Osip; Deutsch, Zvicka; Itzhakov, Stella; Zak, Alla; Cohen, Sidney R; Tenne, Reshef; Oron, Dan

    2012-03-28

    A synthetic route for preparation of inorganic WS(2) nanotube (INT)-colloidal semiconductor quantum dot (QD) hybrid structures is developed, and transient carrier dynamics on these hybrids are studied via transient photoluminescence spectroscopy utilizing several different types of QDs. Measurements reveal efficient resonant energy transfer from the QDs to the INT upon photoexcitation, provided that the QD emission is at a higher energy than the INT direct gap. Charge transfer in the hybrid system, characterized using QDs with band gaps below the INT direct gap, is found to be absent. This is attributed to the presence of an organic barrier layer due to the relatively long-chain organic ligands of the QDs under study. This system, analogous to carbon nanotube-QD hybrids, holds potential for a variety of applications, including photovoltaics, luminescence tagging and optoelectronics.

  20. Electron states in semiconductor quantum dots.

    Science.gov (United States)

    Dhayal, Suman S; Ramaniah, Lavanya M; Ruda, Harry E; Nair, Selvakumar V

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  1. Recent advances in quantum dot surface chemistry.

    Science.gov (United States)

    Hines, Douglas A; Kamat, Prashant V

    2014-03-12

    Quantum dot (QD) surface chemistry is an emerging field in semiconductor nanocrystal related research. Along with size manipulation, the careful control of QD surface chemistry allows modulation of the optical properties of a QD suspension. Even a single molecule bound to the surface can introduce new functionalities. Herein, we summarize the recent advances in QD surface chemistry and the resulting effects on optical and electronic properties. Specifically, this review addresses three main issues: (i) how surface chemistry affects the optical properties of QDs, (ii) how it influences the excited state dynamics, and (iii) how one can manipulate surface chemistry to control the interactions between QDs and metal oxides, metal nanoparticles, and in self-assembled QD monolayers.

  2. Double quantum dots in carbon nanotubes

    Science.gov (United States)

    von Stecher, Javier; Wunsch, Bernhard; Lukin, Mikhail; Demler, Eugene; Rey, Ana Maria

    2010-03-01

    We study the behavior of few-electrons confined in a double-well quantum dot in semiconducting carbon nanotubes. These carbon nanostructures exhibit richer physics than GaAs ones due to the additional valley degree of freedom. We calculate and characterize the low energy eigenstates in the presence of a magnetic field and double-well detuning. Spin-orbit coupling lifts the spin and valley degeneracy and, in the presence of exchange interactions, leads, at small detunings and weak magnetic fields, to a spin-valley antisymmetric two-electron ground state which is not a pure spin-singlet state. At large detuning, the strong Coulomb interactions accessible in carbon nanotubes can substantially modify the non-interacting eigenstates via higher orbital-level mixing. The latter manifest in current transport experiments by the disappearance of the Pauli blockade.

  3. Plasmon assisted photonic crystal quantum dot sensors

    Science.gov (United States)

    Shenoi, R. V.; Ramirez, D. A.; Sharma, Y.; Attaluri, R. S.; Rosenberg, J.; Painter, O. J.; Krishna, S.

    2007-09-01

    We report Quantum Dot Infrared Detectors (QDIP) where light coupling to the self assembled quantum dots is achieved through plasmons occurring at the metal-semiconductor interface. The detector structure consists of an asymmetric InAs/InGaAs/GaAs dots-in-a-well (DWELL) structure and a thick layer of GaAs sandwiched between two highly doped n-GaAs contact layers, grown on a semi-insulating GaAs substrate. The aperture of the detector is covered with a thin metallic layer which along with the dielectric layer confines light in the vertical direction. Sub-wavelength two-dimensional periodic patterns etched in the metallic layer covering the aperture of the detector and the active region creates a micro-cavity that concentrate light in the active region leading to intersubband transitions between states in the dot and the ones in the well. The sidewalls of the detector were also covered with metal to ensure that there is no leakage of light into the active region other than through the metal covered aperture. An enhanced spectral response when compared to the normal DWELL detector is obtained despite the absence of any aperture in the detector. The spectral response measurements show that the Long Wave InfraRed (LWIR) region is enhanced when compared to the Mid Wave InfraRed (MWIR) region. This may be due to coupling of light into the active region by plasmons that are excited at the metal-semiconductor interface. The patterned metal-dielectric layers act as an optical resonator thereby enhancing the coupling efficiency of light into the active region at the specified frequency. The concept of plasmon-assisted coupling is in principle technology agnostic and can be easily integrated into present day infrared sensors.

  4. PREFACE: Quantum dots as probes in biology

    Science.gov (United States)

    Cieplak, Marek

    2013-05-01

    The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated

  5. Electrical And Optical Properties Of Colloidal Quantum Dots And Quantum Dot Networks: Role Of Surface States And Using Biomolecular Links In Network Assembly

    National Research Council Canada - National Science Library

    Stroscio, Michael A; Dutta, Mitra; Ramadurai, Dinakar; Shi, Peng; Li, Yang; Alexson, Dimitri; Kohanpour, Babak; Sethuraman, Akil; Saini, Vikas; Raichura, Amit; Yang, Jianyong

    2004-01-01

    .... Absorption spectra and photoluminescence (PL) spectra of colloidal cadmium sulfide (CdS) quantum dots are analyzed to investigate the role of surface states in determining the electrical and optical properties of these semiconductor quantum dots...

  6. Advanced Epitaxial Lift-Off Quantum Dot Photovoltaic Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop a high-efficiency, triple-junction, epitaxial lift-off (ELO) solar cell by incorporating quantum dots (QDs) within the current-limiting...

  7. Quantum dot conjugates in a sub-micrometer fluidic channel

    Science.gov (United States)

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  8. Photolithographic process for the patterning of quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Na, Young Joo; Park, Sang Joon; Lee, Sang Wha [Department of Chemical and Bioengineering, Kyungwon University, Seongnam-si, Gyeonggi-Do 461-701 (Korea, Republic of); Kim, Jong Sung [Department of Chemical and Bioengineering, Kyungwon University, Seongnam-si, Gyeonggi-Do 461-701 (Korea, Republic of)], E-mail: jskim@kyungwon.ac.kr

    2008-09-15

    Recently, quantum dots have been used as molecular probes substituting for conventional organic fluorophores. Quantum dots are stable against photobleaching and have more controllable emission bands, broader absorption spectra, and higher quantum yields. In this study, an array of ZnS-coated CdSe quantum dots on a slide glass has been prepared by photolithographic method. The array pattern was prepared using a positive photoresist (AZ1518) and developer (AZ351). The patterned glass was silanized with 3-aminopropyltriethoxysilane (APTES), and carboxyl-coated quantum dots were selectively attached onto the array pattern. The silanization was examined by measuring contact angle and the surface of the array pattern was analyzed using AFM and fluorescent microscope.

  9. A triple quantum dot based nano-electromechanical memory device

    Energy Technology Data Exchange (ETDEWEB)

    Pozner, R.; Lifshitz, E. [Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Peskin, U., E-mail: uri@tx.technion.ac.il [Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Lise Meitner Center for Computational Quantum Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  10. Quenched dynamics of entangled states in correlated quantum dots

    Science.gov (United States)

    Maslova, N. S.; Arseyev, P. I.; Mantsevich, V. N.

    2017-10-01

    The time evolution of an initially prepared entangled state in the system of coupled quantum dots has been analyzed by means of two different theoretical approaches: equations of motion for all orders localized electron correlation functions, considering interference effects, and kinetic equations for the pseudoparticle occupation numbers with constraint on the possible physical states. Results obtained by means of different approaches were carefully analyzed and compared to each other. Revealing a direct link between concurrence (degree of entanglement) and quantum dots pair correlation functions allowed us to follow the changes of entanglement during the time evolution of the coupled quantum dots system. It was demonstrated that the degree of entanglement can be controllably tuned during the time evolution of quantum dots system.

  11. Charge-extraction strategies for colloidal quantum dot photovoltaics

    KAUST Repository

    Lan, Xinzheng

    2014-02-20

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

  12. Quantum Dots in the Therapy: Current Trends and Perspectives.

    Science.gov (United States)

    Pohanka, Miroslav

    2017-01-01

    Quantum dots are an emerging nanomaterial with broad use in technical disciplines; however, their application in the field of biomedicine becomes also relevant and significant possibilities have appeared since the discovery in 1980s. The current review is focused on the therapeutic applications of quantum dots which become an emerging use of the particles. They are introduced as potent carriers of drugs and as a material well suited for the diagnosis of disparate pathologies like visualization of cancer cells or pathogenic microorganisms. Quantum dots toxicity and modifications for the toxicity reduction are discussed here as well. Survey of actual papers and patents in the field of quantum dots use in the biomedicine is provided. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  13. Nonequilibrium electron transport through quantum dots in the Kondo regime

    DEFF Research Database (Denmark)

    Wölfle, Peter; Paaske, Jens; Rosch, Achim

    2005-01-01

    Electron transport at large bias voltage through quantum dots in the Kondo regime is described within the perturbative renormalization group extended to nonequilibrium. The conductance, local magnetization, dynamical spin susceptibility and local spectral function are calculated. We show how...

  14. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    . The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due......The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

  15. Coal as an abundant source of graphene quantum dots

    National Research Council Canada - National Science Library

    Ye, Ruquan; Xiang, Changsheng; Lin, Jian; Peng, Zhiwei; Huang, Kewei; Yan, Zheng; Cook, Nathan P; Samuel, Errol L G; Hwang, Chih-Chau; Ruan, Gedeng; Ceriotti, Gabriel; Raji, Abdul-Rahman O; Martí, Angel A; Tour, James M

    2013-01-01

    .... Here we report a facile approach to synthesize tunable graphene quantum dots from various types of coal, and establish that the unique coal structure has an advantage over pure sp2-carbon allotropes...

  16. Electro-absorption of silicene and bilayer graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Abdelsalam, Hazem, E-mail: hazem.abdelsalam@etu.u-picardie.fr [Laboratory of Condensed Matter Physics, University of Picardie, Amiens 80039 (France); Department of Theoretical Physics, National Research Center, Cairo 12622 (Egypt); Talaat, Mohamed H. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt); Lukyanchuk, Igor [Laboratory of Condensed Matter Physics, University of Picardie, Amiens 80039 (France); L. D. Landau Institute for Theoretical Physics, Moscow (Russian Federation); Portnoi, M. E. [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom); Saroka, V. A., E-mail: v.saroka@exeter.ac.uk [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom); Institute for Nuclear Problems, Belarusian State University, Bobruiskaya 11, 220030 Minsk (Belarus)

    2016-07-07

    We study numerically the optical properties of low-buckled silicene and AB-stacked bilayer graphene quantum dots subjected to an external electric field, which is normal to their surface. Within the tight-binding model, the optical absorption is calculated for quantum dots, of triangular and hexagonal shapes, with zigzag and armchair edge terminations. We show that in triangular silicene clusters with zigzag edges a rich and widely tunable infrared absorption peak structure originates from transitions involving zero energy states. The edge of absorption in silicene quantum dots undergoes red shift in the external electric field for triangular clusters, whereas blue shift takes place for hexagonal ones. In small clusters of bilayer graphene with zigzag edges the edge of absorption undergoes blue/red shift for triangular/hexagonal geometry. In armchair clusters of silicene blue shift of the absorption edge takes place for both cluster shapes, while red shift is inherent for both shapes of the bilayer graphene quantum dots.

  17. Graphene quantum dots as the electrolyte for solid state supercapacitors

    National Research Council Canada - National Science Library

    Zhang, Su; Li, Yutong; Song, Huaihe; Chen, Xiaohong; Zhou, Jisheng; Hong, Song; Huang, Minglu

    2016-01-01

    We propose that graphene quantum dots (GQDs) with a sufficient number of acidic oxygen-bearing functional groups such as -COOH and -OH can serve as solution- and solid- type electrolytes for supercapacitor...

  18. Quantum dot conjugates in a sub-micrometer fluidic channel

    Science.gov (United States)

    Stavis, Samuel M [Ithaca, NY; Edel, Joshua B [Brookline, MA; Samiee, Kevan T [Ithaca, NY; Craighead, Harold G [Ithaca, NY

    2008-07-29

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  19. Semiconductor Quantum Dots for Bioimaging and Biodiagnostic Applications

    Science.gov (United States)

    Kairdolf, Brad A.; Smith, Andrew M.; Stokes, Todd H.; Wang, May D.; Young, Andrew N.; Nie, Shuming

    2013-06-01

    Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

  20. Ultrathin Quantum Dot Display Integrated with Wearable Electronics.

    Science.gov (United States)

    Kim, Jaemin; Shim, Hyung Joon; Yang, Jiwoong; Choi, Moon Kee; Kim, Dong Chan; Kim, Junhee; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2017-10-01

    An ultrathin skin-attachable display is a critical component for an information output port in next-generation wearable electronics. In this regard, quantum dot (QD) light-emitting diodes (QLEDs) offer unique and attractive characteristics for future displays, including high color purity with narrow bandwidths, high electroluminescence (EL) brightness at low operating voltages, and easy processability. Here, ultrathin QLED displays that utilize a passive matrix to address individual pixels are reported. The ultrathin thickness (≈5.5 µm) of the QLED display enables its conformal contact with the wearer's skin and prevents its failure under vigorous mechanical deformation. QDs with relatively thick shells are employed to improve EL characteristics (brightness up to 44 719 cd m(-2) at 9 V, which is the record highest among wearable LEDs reported to date) by suppressing the nonradiative recombination. Various patterns, including letters, numbers, and symbols can be successfully visualized on the skin-mounted QLED display. Furthermore, the combination of the ultrathin QLED display with flexible driving circuits and wearable sensors results in a fully integrated QLED display that can directly show sensor data. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.