Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

Science.gov (United States)

Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

2017-05-18

GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Fabrication and properties of light-emitting diodes based on self-assembled multilayers of poly(phenylene vinylene)

Science.gov (United States)

Fou, A. C.; Onitsuka, O.; Ferreira, M.; Rubner, M. F.; Hsieh, B. R.

1996-05-01

Light-emitting diodes have been fabricated from self-assembled multilayers of poly(p-phenylene vinylene) (PPV) and two different polyanions; polystyrene sulfonic acid (SPS) and polymethacrylic acid (PMA). The type of polyanion used to assemble the multilayer thin films was found to dramatically influence the behavior and performance of devices fabricated with indium tin oxide and aluminum electrodes. Light-emitting devices fabricated from PMA/PPV multilayers were found to exhibit luminance levels in the range of 20-60 cd/m2, a thickness dependent turn-on voltage and classical rectifying behavior with rectification ratios greater than 105. In sharp contrast, the devices based on SPS/PPV exhibited near symmetric current-voltage curves, thickness independent turn-on voltages and much lower luminance levels. The significant difference in device behavior observed between these two systems is primarily due to a doping effect induced either chemically or electrochemically by the sulfonic acid groups of SPS. It was also found that the performance of these devices depends on the type of layer that is in contact with the Al top electrode thereby making it possible to manipulate device efficiency at the molecular level.

Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

Science.gov (United States)

Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

2016-01-01

Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes

International Nuclear Information System (INIS)

Lee, Su-Hwan; Kim, Dal-Ho; Kim, Ji-Heon; Lee, Gon-Sub; Park, Jea-Gun; Takeo, Katoh

2009-01-01

For applications such as solar cells and displays, transparent single-crystal Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO 2 and Si 3 N 4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal Si membranes with various thicknesses, and the thinning technology is described. For membranes with thicknesses of 18, 72 and 5000 nm, the respective optical transparent were 96.9%, 93.7% and 9% for R (red, λ = 660 nm), 96.9%, 91.4% and 1% for G (green, λ = 525 nm), and 97.0%, 93.2% and 0% for B (blue, λ = 470 nm). Organic light-emitting diodes (OLEDs) were then fabricated on transparent single-crystal Si membranes with various top Si thicknesses. OLEDs fabricated on 18, 72 and 5000 nm thick membranes and operated at 6 V demonstrated a luminance of 1350, 443 and 27 cd m -2 at the current densities of 148, 131 and 1.5 mA cm -2 , respectively.

Top-emitting organic light-emitting diodes.

Science.gov (United States)

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Science.gov (United States)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Highly efficient fully flexible indium tin oxide free organic light emitting diodes fabricated directly on barrier-foil

International Nuclear Information System (INIS)

Bocksrocker, Tobias; Hülsmann, Neele; Eschenbaum, Carsten; Pargner, Andreas; Höfle, Stefan; Maier-Flaig, Florian; Lemmer, Uli

2013-01-01

We present a simple method for the fabrication of highly conductive and fully flexible metal/polymer hybrid anodes for efficient organic light emitting diodes (OLEDs). By incorporating ultra-thin metal grids into a conductive polymer, we fabricated anodes with very low sheet resistances and high transparency. After optimizing the metallic grid, OLEDs with these hybrid anodes are superior to OLEDs with standard indium tin oxide (ITO) anodes in luminous efficacy by a factor of ∼ 2. Furthermore, the sheet resistance can be reduced by up to an order of magnitude compared to ITO on polyethylene terephthalate (PET). The devices show a very low turn-on voltage and the hybrid anodes do not change the emissive spectra of the OLEDs. In addition, we fabricated the anodes directly on a barrier foil, making the double sided encapsulation of a typically used PET-substrate unnecessary

Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Ou, Haiyan

Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.......Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure....

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

International Nuclear Information System (INIS)

Guan Yunxia; Niu Lianbin

2009-01-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq 3 /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

Science.gov (United States)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

Energy Technology Data Exchange (ETDEWEB)

Guan Yunxia; Niu Lianbin [Key Laboratory of Optical Engineering, College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China)], E-mail: gyxybsy@126.com, E-mail: niulb03@126.com

2009-03-01

White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq{sub 3} /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

International Nuclear Information System (INIS)

Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

2010-01-01

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Fabrication and Characterization of Micro-membrane GaN Light Emitting Diodes

KAUST Repository

Liao, Hsien-Yu

2015-05-01

Developing etching of GaN material system is the key to device fabrications. In this thesis, we report on the fabrication of high throughput lift-off of InGaN/GaN based micro-membrane light emitting diode (LED) from sapphire substrate using UV-assisted photoelectroless chemical (PEsC) etching. Unlike existing bandgap selective etching based on unconventional sacrificial layer, the current hydrofluoric acid based wet etching process enables the selective etching of undoped GaN layer already incorporated in standard commercial LED structures, thus attaining the leverage on high performance device design, and facile wet process technology. The lift-off micro-membrane LED showed 16% alleviated quantum efficiency droop under 200 mA/cm2 current injection, demonstrating the advantage of LED epitaxy exfoliation from the lattice-mismatched sapphire substrate. The origin of the performance improvement was investigated based on non-destructive characterization methods. Photoluminescence (PL) characterization showed a 7nm peak emission wavelength shift in the micro-membrane LED compared to the GaN-on-Sapphire LED. The Raman spectroscopy measurements correlate well with the PL observation that a 0.86 GPa relaxed compressive biaxial strain was achieved after the lift-off process. The micro-membrane LED technology enables further heterogeneous integration for forming pixelated red, green, blue (RGB) display on flexible and transparent substrate. The development of discrete and membrane LEDs using nano-fiber paper as the current spreading layer was also explored for such integration.

Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

International Nuclear Information System (INIS)

Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Liao, Liangsheng; Sun, Baoquan; Zhang, Ke-Qin

2015-01-01

Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq −1 , a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A −1 , demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices. (paper)

Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

Science.gov (United States)

Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Zhang, Ke-Qin; Liao, Liangsheng; Sun, Baoquan

2015-10-01

Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq-1, a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A-1, demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices.

Electroluminescence enhancement for near-ultraviolet light emitting diodes with graphene/AZO-based current spreading layers

DEFF Research Database (Denmark)

Lin, Li; Ou, Yiyu; Zhu, Xiaolong

LEDs) have attracted significant research interest due to their intensive applications in various areas where indium tin oxide (ITO) is one of the most widely employed transparent conductive materials for NUV LEDs. Compared to ITO, indium-free aluminum-doped zinc oxide (AZO) has similar electrical......Near-ultraviolet light emitting diodes with different aluminum-doped zinc oxide-based current spreading layers were fabricated and electroluminescence (EL) was compared. A 170% EL enhancement was achieved by using a graphene-based interlayer. GaN-based near-ultraviolet light emitting diodes (NUV...... with a new type of current spreading layer (CSL) which combines AZO and a single-layer graphene (SLG) as an effective transparent CSL [1]. In the present work, LEDs with solo AZO CSL in Fig.1(a) and SLG/Ni/AZO-based CSL in Fig.1(b) were both fabricated for EL comparison. Standard mesa fabrication including...

Doping of nano structures for light emitting diode applications

International Nuclear Information System (INIS)

Han, S. W.; Yoo, H. J.; Jeong, E. S.; Park, S. H.

2006-04-01

Lighting Emitting Diodes (LED) have been widely studied and developed for practical applications and the LED market in the world have been dramatically expended. GaN-based LEDs are mostly used. However, for diverse application, we should first solved several problems in the GaN-based LEDs, thermal heating effects and low light emitting efficiency. The thermal heating effects reduce the life time of LEDs and the low light emitting efficiency are disadvantageous in competition with electric lights. In this project, we studied the possibility of ZnO nanomaterials as LEDs. We have developed a techniques to fabricated reproducible ZnO nanorod arrays on various substrates with 40 - 100 nm diameters. We have successfully fabricated two-dimensional ZnO film growth on one-dimensional nanorods. We have also systematically studied ZnO nanorod growth on GaN and Al 2 O 3 substrated with different proton treatments to understand the ZnO nanorod growth mechanism. These techniques will be used to develop p-ZnO/n-ZnO nanomaterials as LEDs

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

Science.gov (United States)

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

Investigation of phosphorescent blue organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2008-07-01

Recently, rapid development of phosphorescent materials has significantly improved the efficiency of organic light emitting diodes (OLEDs). By using efficient phosphorescent emitter materials white OLEDs with high power efficiency values could be demonstrated. But especially blue phosphorescent devices, due to stability issues, need to be further investigated und optimized. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated and characterized to study the impact of charge carriers on device performance.

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

Science.gov (United States)

Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

2016-01-11

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

OpenAIRE

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

Science.gov (United States)

Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

2013-05-06

We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

Sensor fabrication method for in situ temperature and humidity monitoring of light emitting diodes.

Science.gov (United States)

Lee, Chi-Yuan; Su, Ay; Liu, Yin-Chieh; Chan, Pin-Cheng; Lin, Chia-Hung

2010-01-01

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06±0.005 (Ω/°C) and 0.033 pF/%RH, respectively.

Sensor Fabrication Method for in Situ Temperature and Humidity Monitoring of Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Chi-Yuan Lee

2010-04-01

Full Text Available In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED. The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS, this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304. The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06 ± 0.005 (Ω/°C and 0.033 pF/%RH, respectively.

Enhanced Emission Efficiency of Size-Controlled InGaN/GaN Green Nanopillar Light-Emitting Diodes

DEFF Research Database (Denmark)

Ou, Yiyu; Iida, Daisuke; Fadil, Ahmed

2016-01-01

Nanopillar InGaN/GaN green light-emitting diode (LED) arrays were fabricated by self-assembled Au nanoparticles patterning and dry etching process. Structure size and density of the nanopillar arrays have been modified by varying the Au film thickness in the nanopatterning process. Fabricated...

Electroplex emission at PVK/Bphen interface for application in white organic light-emitting diodes

International Nuclear Information System (INIS)

Wen Liang; Li Fushan; Xie Jiangxing; Wu Chaoxing; Zheng Yong; Chen Dongling; Xu Sheng; Guo Tailiang; Qu Bo; Chen Zhijian; Gong Qihuang

2011-01-01

White organic light-emitting diode (WOLED) with a structure of ITO/poly(N-vinylcarbazole) (PVK)/4,7-diphenyl-1, 10-phenanthroline (Bphen)/tris(8-hydroxyquinoline)aluminum (Alq 3 )/LiF/Al has been fabricated via the thermal evaporation technique. The electroluminescence (EL) spectrum of the as-fabricated WOLED covers from 380 to 700 nm of the visible light region with a wide blue emission from PVK and an interesting new red emission. The red emission at 613 nm in EL spectra of the WOLED was attributed to electroplex emission at PVK/Bphen interface since it was not observed in photoluminescence spectra. The WOLED showed a Commission International De l'Eclairage coordinate of (0.31, 0.32), which is very close to the standard white coordinate (0.33, 0.33). - Highlights: → A white organic light-emitting diode was fabricated by vacuum deposition. → A new red emission at 613 nm was observed in the electroluminescence spectra. → Red emission comes from electroplex instead of exciplex at PVK/Bphen interface. → The device has a CIE coordinate of (0.31, 0.32).

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

Science.gov (United States)

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

International Nuclear Information System (INIS)

Li-Wen, Sang; Zhi-Xin, Qin; Hao, Fang; Yan-Zhao, Zhang; Tao, Li; Zheng-Yu, Xu; Zhi-Jian, Yang; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Wei-Huang, Yang; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang

2009-01-01

We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Ambient fabrication of flexible and large-area organic light-emitting devices using slot-die coating

DEFF Research Database (Denmark)

Sandstrom, Andreas; Dam, Henrik Friis; Krebs, Frederik C

2012-01-01

available in smartphones, but the promise of a continuous ambient fabrication has unfortunately not materialized yet, as organic light-emitting diodes invariably depend on the use of one or more time-and energy-consuming process steps under vacuum. Here we report an all-solution-based fabrication...... of an alternative emissive device, a light-emitting electrochemical cell, using a slot-die roll-coating apparatus. The fabricated flexible sheets exhibit bidirectional and uniform light emission, and feature a fault-tolerant >1-mu m-thick active material that is doped in situ during operation. It is notable...

Effect of the thickness of Zn(BTZ)2 emitting layer on the electroluminescent spectra of white organic light-emitting diodes

International Nuclear Information System (INIS)

Zhu, F.J.; Hua, Y.L.; Yin, S.G.; Deng, J.C.; Wu, K.W.; Niu, X.; Wu, X.M.; Petty, M.C.

2007-01-01

White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ) 2 /Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ) 2 emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ) 2 . Specially, the thickness of Zn(BTZ) 2 layer effects the relative intensity of two emissions. When the Zn(BTZ) 2 layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ) 2 layer was 65 nm

Weak-microcavity organic light-emitting diodes with improved light out-coupling.

Science.gov (United States)

Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

2008-08-18

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

KAUST Repository

Gutiérrez-Heredia, Gerardo

2010-10-04

We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas \\'parylene only\\' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

KAUST Repository

Gutié rrez-Heredia, Gerardo; Gonzá lez, Luis A.; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

2010-01-01

We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

Science.gov (United States)

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

Enhanced cathodoluminescence from InGaN/GaN light-emitting diodes with nanohole arrays fabricated using anodic aluminum-oxide masks

International Nuclear Information System (INIS)

Doan, M. H.; Lim, H.; Lee, J. J.; Nguyen, D. H.; Rotermund, F.; Mho, S. I.

2010-01-01

Blue InGaN/GaN light emitting diodes (LEDs) have been grown by using low-pressure metalorganic chemical vapor deposition. To improve the light extraction from the LEDs, we have fabricated nanohole arrays on top of the p-GaN layer by using anodic aluminum oxides as etch masks. The AAO membranes are fabricated by using a two-step anodization process in an oxalic-acid solution. Atomic force microscopy and field emission scanning electron microscopy show that the nanohole arrays formed on top of the LEDs have a quasi-hexagonal geometry. The cathodoluminescence measurements are used to investigate the light extraction from the nanopatterned samples. Cathodoluminescence intensity of a LED with the nanohole array is enhanced up to 10 times compared to that of a sample without a nanohole array. We also investigated the spatially-resolved luminescence profile around the nanoholes.

Luminance enhancement in quantum dot light-emitting diodes fabricated with Field’s metal as the cathode

Science.gov (United States)

Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.

2017-03-01

This work reports the fabrication and characterization of blue-green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1-x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.

Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

Science.gov (United States)

Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

2017-07-25

Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

Recent developments in white light emitting diodes

Science.gov (United States)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application

Comparison of organic light emitting diodes with different mixed layer structures

Energy Technology Data Exchange (ETDEWEB)

Kee, Y.Y.; Siew, W.O. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Yap, S.S. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia); Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, T.Y., E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia)

2014-11-03

A mixed-source thermal evaporation method was used to fabricate organic light emitting diodes (OLEDs) with uniformly mixed (UM), continuously graded mixed (CGM) and step-wise graded, mixed (SGM) light-emitting layers. N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine and Tris-(8-hydroxyquinoline)aluminum were used, respectively, as the hole- and electron-transport materials. As compared to the conventional, heterojunction OLED, the maximum brightness of UM-, CGM- and SGM-OLEDs without charge injection layers were improved by 2.2, 3.8 and 2.1 times, respectively, while the maximum power efficiencies improved by 1.5, 3.2 and 1.9 times. These improvements were discussed in terms of more distributed recombination zone and removal of interfacial barrier. - Highlights: • Fabrication of OLEDs using a mixed-source evaporation technique • Three different types of mixed-host OLEDs with better brightness • Improved electroluminescence and power efficiencies as compared to conventional OLED.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Directory of Open Access Journals (Sweden)

Ya-Ju Lee

2014-05-01

Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

Effect of the thickness of Zn(BTZ){sub 2} emitting layer on the electroluminescent spectra of white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhu, F.J. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Hua, Y.L. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China)]. E-mail: yulinhua@tjut.edu.cn; Yin, S.G. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Deng, J.C. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, K.W. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Niu, X. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, X.M. [Institute of Modern Optics, Nankai University, Tianjin 300191 (China); Petty, M.C. [Centre for Molecular and Nanoscale Electronics, University of Durham, Durham DH1 3LE (United Kingdom)

2007-01-15

White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ){sub 2}/Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ){sub 2} emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ){sub 2}. Specially, the thickness of Zn(BTZ){sub 2} layer effects the relative intensity of two emissions. When the Zn(BTZ){sub 2} layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ){sub 2} layer was 65 nm.

Simple assembling of organic light emitting diodes for teaching purposes in undergraduate labs

Science.gov (United States)

Vázquez-Córdova, Sergio; Ramos-Ortiz, Gabriel; Maldonado, José Luis; Meneses-Nava, Marco A.; Barbosa-García, Oracio

2008-04-01

Electroluminescent organic molecules and polymers have emerged as advanced materials used to fabricate organic light emitting diodes (OLED's) whose unique technological features could revolutionize the industry of flat panel displays. Although these novel organic materials combine low cost and ease of processing, the OLED's fabrication for educational purposes has been rarely reported. In this work, we report a simple and inexpensive method to fabricate OLED's devices intended for educational purposes in the undergraduate level of physics, chemistry and material sciences. For ease of fabrication the cathode in the diode structure was conformed by either an alloy of Bi-Pb-Cd-Sn or by a Ga-In alloy in liquid phase, or simply by silver paint, whereas we used ITO (Indium tin oxide) deposited on glass substrates as anode. Substrates of flexible plastic were also used. The OLED's were fabricated using the spin-coating technique with solutions of the fluorescent materials Alq3 and MEH:PPV, as well as the phosphorescent complex Ru(bpy)3. We report measurement data on current-voltage curves and luminescence obtained by students fabricating and testing the devices under normal room conditions.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Science.gov (United States)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Near infrared organic light-emitting diodes based on acceptor-donor-acceptor (ADA) using novel conjugated isatin Schiff bases

International Nuclear Information System (INIS)

Taghi Sharbati, Mohammad; Soltani Rad, Mohammad Navid; Behrouz, Somayeh; Gharavi, Alireza; Emami, Farzin

2011-01-01

Fabrications of a single layer organic light emitting diodes (OLEDs) based on two conjugated acceptor-donor-acceptor (ADA) isatin Schiff bases are described. The electroluminescent spectra of these materials range from 630 to 700 nm and their band gaps were measured between 1.97 and 1.77 eV. The measured maximum external quantum efficiencies (EQE) for fabricated OLEDs are 0.0515% and 0.054% for two acceptor-donor-acceptor chromophores. The Commission International De L'Eclairage (CIE) (1931) coordinates of these two compounds were attained and found to be (0.4077, 0.4128) and (0.4411, 0.4126) for two used acceptor-donor-acceptor chromophores. The measured I-V curves demonstrated the apparent diode behavior of two ADA chromophores. The turn-on voltages in these OLEDs are directly dependent on the thickness. These results have demonstrated that ADA isatin Schiff bases could be considered as promising electroluminescence-emitting materials for fabrication of OLEDs.

The influence of melt purification and structure defects on mid-infrared light emitting diodes

CERN Document Server

Krier, A

2003-01-01

Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mu m and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH sub 4 absorption spectrum and potentially could form the basis of a practical infrared CH sub 4 gas sensor.

Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

CERN Document Server

Williams, E W; Pamplin, BR

2013-01-01

Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex

Science.gov (United States)

Jafari, Mohammad Reza; Janghouri, Mohammad; Shahedi, Zahra

2017-01-01

A new π electron rich zinc complex was used as a fluorescent material in organic light-emitting diodes (OLEDs). Devices with a structure of indium tin oxide/poly (3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT: PSS) (50 nm)/polyvinylcarbazole (60 nm)/Zn: %2 porphyrin derivatives (45 nm)/Al (150 nm) were fabricated. Porphyrin derivatives accounting for 2 wt.% in the π electron rich zinc complex were used as a host. The electroluminescence (EL) spectra of porphyrin derivatives indicated a red shift, as π electron rich zinc complex EL spectra. The device (4) has also a luminance of 3420 cd/m2 and maximum efficiency of 1.58 cd/A at 15 V, which are the highest values among four devices. The result of Commission International del'Eclairage (CIE) (X, Y) coordinate and EL spectrum of device (3) indicated that it is more red shifted compared to other devices. Results of this work indicate that π electron rich zinc complex is a promising host material for high efficiency red OLEDs and has a simple structure compared to Alq3-based devices.

Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

Science.gov (United States)

Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

2018-06-01

Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

Science.gov (United States)

Shaw-Stewart, James; Mattle, Thomas; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

Energy Technology Data Exchange (ETDEWEB)

Shaw-Stewart, James, E-mail: james.shaw-stewart@ed.ac.uk [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Mattle, Thomas [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Nagel, Matthias [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Nüesch, Frank, E-mail: frank.nueesch@empa.ch [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Section de science et génie des matériaux, EPFL, CH-1015 Lausanne (Switzerland); Wokaun, Alexander [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland)

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

Novel green-emitting Na2CaPO4F:Eu2+ phosphors for near-ultraviolet white light-emitting diodes

International Nuclear Information System (INIS)

Huang, Chien-Hao; Chen, Yen-Chi; Kuo, Te-Wen; Chen, Teng-Ming

2011-01-01

In this study, green-emitting Na 2 CaPO 4 F:Eu 2+ phosphors were synthesized by solid-state reactions. The excitation spectra of the phosphors showed a broad hump between 250 and 450 nm; the spectra match well with the near-ultraviolet (NUV) emission spectra of light-emitting diodes (LEDs). The emission spectrum showed an intense broad emission band centered at 506 nm. White LEDs were fabricated by integrating a 390 nm NUV chip comprising blue-emitting BaMgAl 10 O 17 :Eu 2+ , green-emitting Na 2 CaPO 4 F:0.02 Eu 2+ , and red-emitting CaAlSiN 3 :Eu 2+ phosphors into a single package; the white LEDs exhibited white light with a correlated color temperature of 5540 K, a color-rendering index of 90.75, and color coordinates (0.332, 0.365) close to those of ideal white light. - Highlights: → Novel green-emitting Na 2 CaPO 4 F:Eu 2+ phosphors were synthesized by solid-state reactions in this research. → White LEDs were fabricated by integrating a 390 nm NUV chip comprising blue-emitting BaMgAl 10 O 17 :Eu 2+ , green-emitting Na 2 CaPO 4 F:0.02Eu 2+ , and red-emitting CaAlSiN 3 :Eu 2+ phosphors into a single package. → The white LEDs exhibited white light with a correlated color temperature of 5540 K, a color-rendering index of 90.75, and color coordinates (0.332, 0.365) close to those of ideal white light.

Organic light emitting diode with light extracting electrode

Energy Technology Data Exchange (ETDEWEB)

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

Light-emitting diodes based on nontoxic zinc-alloyed silver-indium-sulfide (AIZS) nanocrystals

Science.gov (United States)

Bhaumik, Saikat; Guchhait, Asim; Pal, Amlan J.

2014-04-01

We report solution-processed growth of zinc-alloyed silver-indium-sulfide (AIZS) nanocrystals followed by fabrication and characterization of light-emitting diodes (LEDs) based on such nanostructures. While growing the low dimensional crystals, we vary the ratio between the silver and zinc contents that in turn tunes the bandgap and correspondingly their photoluminescence (PL) emission. We also dope the AIZS nanocrystals with manganese, so that their PL emission, which appears due to a radiative transition between the d-states of the dopants, becomes invariant in energy when the diameter of the quantum dots or the dopant concentration in the nanostructures varies. The LEDs fabricated with such undoped and manganese-doped AIZS nanocrystals emit electroluminescence (EL) that matches the PL spectrum of the respective nanomaterial. The results demonstrate examples of quantum dot LEDs (QDLEDs) based on nontoxic AIZS nanocrystals.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

KAUST Repository

Prabaswara, Aditya

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

High Intensity Organic Light-emitting Diodes

Science.gov (United States)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

Science.gov (United States)

Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

2012-10-01

We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

Science.gov (United States)

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of White Organic Light Emitting Diode Using Two Types of Zn-Complexes as an Emitting Layer.

Science.gov (United States)

Kim, Dong-Eun; Kwon, Young-Soo; Shin, Hoon-Kyu

2015-01-01

We have studied white OLED using two types of Zn-complexes as an emitting layer. We synthesized brand new two emissive materials, Zn(HPQ)2 as a yellow emitting material and Zn(HPB)2 as a blue emitting material. The Zn-complexes are low-molecular compounds and stable thermally. The fundamental structures of the fabricated OLED was ITO/NPB (40 nm)/Zn(HPB)2 (30 nm)/Zn(HPQ)2/LiF/Al. We varied the thickness of the Zn(HPQ)2 layer by 20, 30, and 40 nm. When the thickness of the Zn(HPQ)2 layer was 20 nm, the white emission was achieved. The maximum luminance was 12,000 cd/m2 at a current density of 800 mA/cm2. The CIE coordinates of the white emission were (0.319, 0.338) at an applied voltage of 10 V.

Degradation of light emitting diodes: a proposed methodology

International Nuclear Information System (INIS)

Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

2011-01-01

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

Science.gov (United States)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Degradation of phosphorescent blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Steinbacher, Frank [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

2009-07-01

Development of phosphorescent materials has significantly improved the efficiency of organic light-emitting diodes (OLEDs). By using efficient red, green and blue phosphorescent emitter materials high efficient white OLEDs can be achieved. However, due to low stability of blue phosphorescent materials the lifetime of phosphorescent white OLEDs remains an issue. As a result, degradation of blue phosphorescent materials needs to be further investigated and improved. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated. For investigation of degradation process the devices were stressed with electrical current and UV-light to study the impact of charge carriers as well as excitons and exciton-polaron quenching on the stability of the blue dye.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan

2015-03-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

Science.gov (United States)

Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

2017-06-01

Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

Fabrication of Photonic Crystal Structures on Flexible Organic Light-Emitting Diodes by Using Nano-Imprint and PDMS Mold

Directory of Open Access Journals (Sweden)

Ho Ting-Lin

2016-01-01

Full Text Available In this paper, nanoimprint lithography was used to create a photonic crystals structure film in organic light-emitting diode (OLED component, and then compare the efficiency of components whether with nanostructure or not. By using two different kinds of mold, such as silicon mold and PDMS mold, the nano structures in PMMA (molecular weight of 350K were fabricated. Nanostructures in period of 403.53nm with silicon mold and nano structures in period of 385.64nm with PDMS mold as photonic crystal films were fabricated and were integrated into OLED. In experimental results, the OLED without photonic crystal films (with packing behaves 193.3cd/m2 for luminous intensity, 3.481cd/A for lightening efficiency (ηL and 0.781 lm/W for lightening power (ηP where V is 14V and I is 5.5537mA; the OLED with photonic crystal films (with packing behaves 241.6cd/m2 for luminous intensity, 4.173cd/A for lightening efficiency (ηL and 0.936 lm/W for lightening power (ηP where voltage of 14V and current (I of 5.7891mA, which shows that the latter perform is well.

Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

Science.gov (United States)

Gupta, Rohini Bhardwaj; Nagpal, Swati; Arora, Swati; Bhatnagar, Pramod Kumar; Mathur, Parmatma Chandra

2011-01-01

Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.

Towards developing a tandem of organic solar cell and light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [School of Engineering and IT, B-purple-12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

2011-01-15

It is proposed here to design a tandem of organic solar cell (OSC) and white organic light emitting diode (WOLED) which can generate power in the day time from the sun and provide lighting at night. With the advancement of chemical technology, such device is expected to be very-cost effective and reasonably efficient. A device thus fabricated has the potential of meeting the world's sustainable domestic and commercial power and lighting needs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer

Energy Technology Data Exchange (ETDEWEB)

Kim, M.S.; Jeong, C.H.; Lim, J.T. [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Yeom, G.Y. [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); The National Program for Tera-level Devices, Hawolgok-dong, Sungbuk-gu, Seoul, 136-791 (Korea, Republic of)], E-mail: gyyeom@skku.edu

2008-04-01

White top-emitting organic light-emitting diodes (TEOLEDs) composed of one doped emissive layer which emits two-wavelength light though the radiative recombination were fabricated. As the emissive layer, 4,4-bis(2,2-diphenylethen-1-yl)biphenyl (DPVBi) was used as the host material and 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) was added as the dopant material. By optimizing the DCJTB concentration (1.2%) and the thickness of the DPVBi layer (30 nm), the intensity ratio of the two wavelengths could be adjusted for balanced white light emission. By using the device composed of glass/Ag (100 nm)/ITO (90 nm)/2-TNATA (60 nm)/NPB (15 nm)/DPVBi:DCJTB (1.2%, 30 nm)/Alq{sub 3} (20 nm)/Li (1.0 nm)/Al (2.0 nm)/Ag (20 nm)/ITO (63 nm)/SiO{sub 2} (42 nm), the Commission Internationale d'Eclairage (CIE) chromaticity coordinate of (0.32, 0.34) close to the ideal white color CIE coordinate could be obtained at 100 cd/m{sup 2}.

Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin

International Nuclear Information System (INIS)

Byeon, Kyeong-Jae; Cho, Joong-Yeon; Jo, Han-Byeol; Lee, Heon

2015-01-01

Highlights: • A various high-refractive-index ZnO patterns were formed on LED using imprinting. • Mechanism of light extraction enhancement was demonstrated by simulation and EL. • Light output power of patterned LED was improved up 19.6% by light waveguide effect. - Abstract: We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices

Color-tunable and stable-efficiency white organic light-emitting diode fabricated with fluorescent-phosphorescent emission layers

International Nuclear Information System (INIS)

Yang, Su-Hua; Shih, Po-Jen; Wu, Wen-Jie; Huang, Yi-Hua

2013-01-01

White organic light emitting diodes (OLEDs) were fabricated for color-tunable lighting applications. Fluorescent and phosphorescent hybrid emission layers (EMLs) were used to enhance the luminance and stability of the devices, which have blue-EML/CBP interlayer/green-EML/phosphorescent-sensitized-EML/red-EML structures. The influence of the composition and structure of the EMLs on the electroluminescence properties of the devices were investigated from the viewpoint of their emission spectra. The possible exciton harvesting, diffusion, transport, and annihilation processes occurring in the EMLs were also evaluated. A maximum luminance intensity of 7400 cd/m 2 and a highly stable current efficiency of 3.2 cd/A were obtained. Good color tunability was achieved for the white OLEDs; the chromatic coordinates linearly shifted from pure white (0.300, 0.398) to cold white (0.261, 0.367) when the applied voltage was varied from 10 to 14 V. -- Highlights: • Exciton harvesting, diffusion, transport, and annihilation processes were evaluated. • The electroluminescence properties were investigated from the viewpoint of the emission spectra. • Good color tunability and stable-efficiency were achieved for the white OLEDs

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

Light emitting diodes as a plant lighting source

Energy Technology Data Exchange (ETDEWEB)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone

Science.gov (United States)

Liu, Shengqiang; Wu, Ruofan; Huang, Jiang; Yu, Junsheng

2013-09-01

A voltage-controlled color-tunable and high-efficiency organic light-emitting diode (OLED) by inserting 16-nm N,N'-dicarbazolyl-3,5-benzene (mCP) interlayer between two complementary emitting layers (EMLs) was fabricated. The OLED emitted multicolor ranging from blue (77.4 cd/A @ 6 V), white (70.4 cd/A @ 7 V), to yellow (33.7 cd/A @ 9 V) with voltage variation. An equivalent model was proposed to reveal the color-tunable and high-efficiency emission of OLEDs, resulting from the swing of exciton bilateral migration zone near mCP/blue-EML interface. Also, the model was verified with a theoretical arithmetic using single-EML OLEDs to disclose the crucial role of mCP exciton adjusting layer.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H.; Ahmed, Osman S.; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport

Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

International Nuclear Information System (INIS)

Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

2016-01-01

Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

A white organic light emitting diode based on anthracene-triphenylamine derivatives

Science.gov (United States)

Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

2010-10-01

White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

Organic light-emitting diodes using novel embedded al gird transparent electrodes

Science.gov (United States)

Peng, Cuiyun; Chen, Changbo; Guo, Kunping; Tian, Zhenghao; Zhu, Wenqing; Xu, Tao; Wei, Bin

2017-03-01

This work demonstrates a novel transparent electrode using embedded Al grids fabricated by a simple and cost-effective approach using photolithography and wet etching. The optical and electrical properties of Al grids versus grid geometry have been systematically investigated, it was found that Al grids exhibited a low sheet resistance of 70 Ω □-1 and a light transmission of 69% at 550 nm with advantages in terms of processing conditions and material cost as well as potential to large scale fabrication. Indium Tin Oxide-free green organic light-emitting diodes (OLED) based on Al grids transparent electrodes was demonstrated, yielding a power efficiency >15 lm W-1 and current efficiency >39 cd A-1 at a brightness of 2396 cd m-2. Furthermore, a reduced efficiency roll-off and higher brightness have been achieved compared with ITO-base device.

Highly efficient red phosphorescent organic light-emitting diodes based on solution processed emissive layer

International Nuclear Information System (INIS)

Liu, Baiquan; Xu, Miao; Tao, Hong; Ying, Lei; Zou, Jianhua; Wu, Hongbin; Peng, Junbiao

2013-01-01

Highly efficient red phosphorescent organic polymer light-emitting diodes (PhOLEDs) were fabricated based on a solution-processed small-molecule host 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) by doping an iridium complex, tris(1-(2,6-dimethylphenoxy)-4-(4-chlorophenyl)phthalazine)iridium (III) (Ir(MPCPPZ) 3 ). A hole blocking layer 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) with a function of electron transport was thermally deposited onto the top of CBP layer. The diode with the structure of ITO/PEDOT:PSS (50 nm)/CBP:Ir(MPCPPZ) 3 (55 nm)/TPBI (30 nm)/Ba (4 nm)/Al (120 nm) showed an external quantum efficiency (QE ext ) of 19.3% and luminous efficiency (LE) of 18.3 cd/A at a current density of 0.16 mA/cm 2 , and Commission International de I'Eclairage (CIE) coordinates of (0.607, 0.375). It was suggested that the diodes using TPBI layer exhibited nearly 100% internal quantum efficiency and one order magnitude enhanced LE or QE ext efficiencies. -- Highlights: • Efficient red PhOLEDs based on a solution-processed small-molecule host were fabricated. • By altering volume ratio of chloroform/chlorobenzene solvent, we got best film quality of CBP. • EQE of the diode was 19.3%, indicating nearly 100% internal quantum yield was achieved

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

Science.gov (United States)

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organometal halide perovskite light-emitting diodes with laminated carbon nanotube electrodes

Science.gov (United States)

Shan, Xin; Bade, Sri Ganesh R.; Geske, Thomas; Davis, Melissa; Smith, Rachel; Yu, Zhibin

2017-08-01

Organometal halide perovskite light-emitting diodes (LEDs) with laminated carbon nanotube (CNT) electrodes are reported. The LEDs have an indium tin oxide (ITO) bottom electrode, a screen printed methylammonium lead tribromide (MAPbBr3)/polymer composite thin film as the emissive layer, and laminated CNT as the top electrode. The devices can be turned on at 2.2 V, reaching a brightness of 4,960 cd m-2 and a current efficiency of 1.54 cd A-1 at 6.9 V. The greatly simplified fabrication process in this work can potentially lead to the scalable manufacturing of large size and low cost LED panels in the future.

Light emitting diodes as an alternative ambient illumination source in photolithography environment

DEFF Research Database (Denmark)

Corell, Dennis Dan; Ou, Haiyan; Dam-Hansen, Carsten

2009-01-01

We explored an alternative light emitting diode (LED) - based solution to replace the existing yellow fluorescent light tubes (YFT) used in photolithography rooms. A no-blue LED lamp was designed and a prototype was fabricated. For both solutions, the spectral power distribution (SPD) was measured......, the colorimetric values were calculated, and a visual comparison using Gretagmacbeth colorcharts was performed. The visual comparison showed that the LED bulb was better to render colors despite a low color rendering index (CRI). Furthermore, the LED bulb was tested in a photolithography room...... and there was no exposure to the photoresist even after 168 hours illumination....

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

Science.gov (United States)

Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

2016-09-01

Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

Nano-honeycomb structured transparent electrode for enhanced light extraction from organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shi, Xiao-Bo; Qian, Min; Wang, Zhao-Kui, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn; Liao, Liang-Sheng, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215123 (China)

2015-06-01

A universal nano-sphere lithography method has been developed to fabricate nano-structured transparent electrode, such as indium tin oxide (ITO), for light extraction from organic light-emitting diodes (OLEDs). Perforated SiO{sub 2} film made from a monolayer colloidal crystal of polystyrene spheres and tetraethyl orthosilicate sol-gel is used as a template. Ordered nano-honeycomb pits on the ITO electrode surface are obtained by chemical etching. The proposed method can be utilized to form large-area nano-structured ITO electrode. More than two folds' enhancement in both current efficiency and power efficiency has been achieved in a red phosphorescent OLED which was fabricated on the nano-structured ITO substrate.

Characteristics of organic light emitting diodes with copper iodide as injection layer

Energy Technology Data Exchange (ETDEWEB)

Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2010-09-30

We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

Energy Technology Data Exchange (ETDEWEB)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-09-15

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-01-01

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

Improved power efficiency of blue fluorescent organic light-emitting diode with intermixed host structure

Energy Technology Data Exchange (ETDEWEB)

Yue, Shouzhen; Zhang, Shiming; Zhang, Zhensong; Wu, Yukun; Wang, Peng; Guo, Runda; Chen, Yu; Qu, Dalong; Wu, Qingyang; Zhao, Yi, E-mail: yizhao@jlu.edu.cn; Liu, Shiyong

2013-11-15

High power efficiency (PE) p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) based fluorescent blue organic light-emitting diode (OLED) is demonstrated by utilizing intermixed host (IH) structure. The PE outperforms those devices based on single host (SH), mixed host (MH), and double emitting layers (DELs). By further optimizing the intermixed layer, peak PE of the IH device is increased up to 8.7 lm/W (1.7 times higher than conventional SH device), which is the highest value among the DSA-ph based blue device reported so far. -- Highlights: • DSA-ph based blue fluorescent OLEDs are fabricated. • The intermixed host structure is first introduced into the blue devices. • Blue device with the highest power efficiency based on DSA-ph is obtained.

Effect of the polymer emission on the electroluminescence characteristics of n-ZnO nanorods/p-polymer hybrid light emitting diode

Science.gov (United States)

Zaman, S.; Zainelabdin, A.; Amin, G.; Nur, O.; Willander, M.

2011-09-01

Hybrid light emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods and polymers (single and blended) were fabricated and characterized. The ZnO nanorods were grown by the chemical bath deposition method at 50°C. Three different LEDs, with blue emitting, orange-red emitting or their blended polymer together with ZnO nanorods, were fabricated and studied. The current-voltage characteristics show good diode behavior with an ideality factor in the range of 2.1 to 2.27 for all three devices. The electroluminescence spectrum (EL) of the blended device has an emission range from 450 nm to 750 nm, due to the intermixing of the blue emission generated by poly(9,9-dioctylfluorene) denoted as PFO with orange-red emission produced by poly(2-methoxy-5(20-ethyl-hexyloxy)-1,4-phenylenevinylene) 1,4-phenylenevinylene) symbolized as MEH PPV combined with the deep-band emission (DBE) of the ZnO nanorods, i.e. it covers the whole visible region and is manifested as white light. The CIE color coordinates showed bluish, orange-red and white emission from the PFO, MEH PPV and blended LEDs with ZnO nanorods, respectively. These results indicate that the choice of the polymer with proper concentration is critical to the emitted color in ZnO nanorods/p-organic polymer LEDs and careful design should be considered to obtain intrinsic white light sources.

Operation of AC Adapters Visualized Using Light-Emitting Diodes

Science.gov (United States)

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

Contact light-emitting diodes based on vertical ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Panin, G. N. [Dongguk University, Seoul (Korea, Republic of); Russian Academy of Sciences, Chernogolovka, Moscow district (Russian Federation); Cho, H. D.; Lee, S. W.; Kang, T. W. [Dongguk University, Seoul (Korea, Republic of)

2014-05-15

We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/pGaN VCLEDs on a large area of about 4 cm{sup 2}. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurally perfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

International Nuclear Information System (INIS)

Kim, Sukwon; Kim, Tae Geun

2015-01-01

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Effects of the thickness of NiO hole transport layer on the performance of all-inorganic quantum dot light emitting diode

International Nuclear Information System (INIS)

Zhang, Xiao Li; Dai, Hai Tao; Zhao, Jun Liang; Li, Chen; Wang, Shu Guo; Sun, Xiao Wei

2014-01-01

All-inorganic quantum dot light emitting diodes (QLEDs) have recently gained great attention owing to their high stability under oxygenic, humid environment and higher operating currents. In this work, we fabricated all-inorganic CdSe/ZnS core-shell QLEDs composed of ITO/NiO/QDs/ZnO/Al, in which NiO and ZnO thin film deposited via all-solution method were employed as hole and electron transport layer, respectively. To achieve high light emitting efficiency, the balance transport between electrons and holes play a key role. In this work, the effects of the thickness of NiO film on the performance of QLEDs were explored experimentally in details. NiO layers with various thicknesses were prepared with different rotation speeds. Experimental results showed that thinner NiO layer deposited at higher rotation speed had higher transmittance and larger band gap. Four typical NiO thickness based QLEDs were fabricated to optimize the hole transport layer. Thinner NiO layer based device performs bright emission with high current injection, which is ascribed to the reduced barrier height between hole transport layer and quantum dot. - Highlights: • All-inorganic quantum dot light emitting diodes (QLEDs) were fabricated. • Thinner NiO film can effectively enhance on–off properties of devices. • Improved performance of QLEDs is mainly attributed to energy barrier reduction

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

Science.gov (United States)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

2017-11-01

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

Single nanowire green InGaN/GaN light emitting diodes

Science.gov (United States)

Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

2016-10-01

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Multi-solution processes of small molecule for flexible white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Tsai, Yu-Sheng, E-mail: ystsai@nfu.edu.tw [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Chittawanij, Apisit; Hong, Lin-Ann; Guo, Siou-Wei [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Wang, Ching-Chiun [Department of Solid State Lighting Technology, Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC (China); Juang, Fuh-Shyang [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Lai, Shih-Hsiang [Department of Solid State Lighting Technology, Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC (China); Lin, Yang-Ching [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China)

2016-04-01

Most small molecule organic light emitting diode (SM-OLED) device structures are made in one layer using solution-based processing because the solution is usually a high dissolvent material that easily attacks the layer below it. We demonstrate a simple and reliable stamping technique for fabricating multi-solution process flexible white SM-OLEDs. The structure is anode/spin-hole injection layer/spin-emitting layer/stamping-electron transport layer/cathode. Poly(di-methyl silane) (PDMS) stamp is used for transferring electron transport layer. An intermediate ultraviolet-ozone surface treatment is introduced to temporarily modify the PDMS stamp surface. Then, the solution-based electron transport layer film can therefore be uniformly formed on top of the PDMS surface. After that the electron transport layer film on the PDMS stamp is transfer-printed onto the emitting layer with suitable heating and pressing. A solution-based processing is successfully established to efficiently fabricate flexible white SM-OLEDs. The SM-OLEDs were obtained at the current density of 20 mA/cm{sup 2}, luminance of 1062 cd/m{sup 2}, current efficiency of 5.57 cd/A, and Commission internationale de l'éclairage coordinate of (0.32, 0.35). - Highlights: • All solution-processed small molecule materials (emitting layer, electron transport layer). • Poly(di-methylsilane) (PDMS) stamp is subsequently used for stamping transfer. • The flexible white SM-OLEDs are based on solution-processes with a low-cost method.

Multi-solution processes of small molecule for flexible white organic light-emitting diodes

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Chittawanij, Apisit; Hong, Lin-Ann; Guo, Siou-Wei; Wang, Ching-Chiun; Juang, Fuh-Shyang; Lai, Shih-Hsiang; Lin, Yang-Ching

2016-01-01

Most small molecule organic light emitting diode (SM-OLED) device structures are made in one layer using solution-based processing because the solution is usually a high dissolvent material that easily attacks the layer below it. We demonstrate a simple and reliable stamping technique for fabricating multi-solution process flexible white SM-OLEDs. The structure is anode/spin-hole injection layer/spin-emitting layer/stamping-electron transport layer/cathode. Poly(di-methyl silane) (PDMS) stamp is used for transferring electron transport layer. An intermediate ultraviolet-ozone surface treatment is introduced to temporarily modify the PDMS stamp surface. Then, the solution-based electron transport layer film can therefore be uniformly formed on top of the PDMS surface. After that the electron transport layer film on the PDMS stamp is transfer-printed onto the emitting layer with suitable heating and pressing. A solution-based processing is successfully established to efficiently fabricate flexible white SM-OLEDs. The SM-OLEDs were obtained at the current density of 20 mA/cm"2, luminance of 1062 cd/m"2, current efficiency of 5.57 cd/A, and Commission internationale de l'éclairage coordinate of (0.32, 0.35). - Highlights: • All solution-processed small molecule materials (emitting layer, electron transport layer). • Poly(di-methylsilane) (PDMS) stamp is subsequently used for stamping transfer. • The flexible white SM-OLEDs are based on solution-processes with a low-cost method.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

Printable candlelight-style organic light-emitting diode

Science.gov (United States)

Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

2017-06-01

Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

Evaluation of light-emitting diode beacon light fixtures.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Chiao-Wen Yeh

2010-03-01

Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

Science.gov (United States)

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Extremely efficient flexible organic light-emitting diodes with modified graphene anode

Science.gov (United States)

Han, Tae-Hee; Lee, Youngbin; Choi, Mi-Ri; Woo, Seong-Hoon; Bae, Sang-Hoon; Hong, Byung Hee; Ahn, Jong-Hyun; Lee, Tae-Woo

2012-02-01

Although graphene films have a strong potential to replace indium tin oxide anodes in organic light-emitting diodes (OLEDs), to date, the luminous efficiency of OLEDs with graphene anodes has been limited by a lack of efficient methods to improve the low work function and reduce the sheet resistance of graphene films to the levels required for electrodes. Here, we fabricate flexible OLEDs by modifying the graphene anode to have a high work function and low sheet resistance, and thus achieve extremely high luminous efficiencies (37.2 lm W-1 in fluorescent OLEDs, 102.7 lm W-1 in phosphorescent OLEDs), which are significantly higher than those of optimized devices with an indium tin oxide anode (24.1 lm W-1 in fluorescent OLEDs, 85.6 lm W-1 in phosphorescent OLEDs). We also fabricate flexible white OLED lighting devices using the graphene anode. These results demonstrate the great potential of graphene anodes for use in a wide variety of high-performance flexible organic optoelectronics.

Dual-wavelength electroluminescence from an n-ZnO/p-GaN heterojunction light emitting diode

International Nuclear Information System (INIS)

Tsai, Bor-Sheng; Chiu, Hung-Jen; Chen, Tai-Hong; Lai, Li-Wen; Ho, Chai-Cheng; Liu, Day-Shan

2015-01-01

Highlights: • The LEDs fabricated by 450 °C- and 700 °C-annealed n-ZnO/p-GaN heterojunction structures were investigated. • The structure annealed at 700 °C emitted yellowish light composed of the dual-wavelength radiations centered at 420 and 610 nm. • The long-wavelength radiation was attributed to emerge from the deep-level emission and the Ga–O interlayer emission. - Abstract: We investigated the electro-optical properties of light emitting diodes (LEDs) fabricated by using the n-ZnO/p-GaN heterojunction structures annealed at 450 °C and 700 °C, in vacuum ambient. A dominant near-UV emission at approximately 420 nm was observed from the LED fabricated by the 450 °C-annealed n-ZnO/p-GaN heterojunction structure, whereas that of the structure annealed at 700 °C emitted a yellowish light composed of the dual-wavelength emissions centered at 420 and 610 nm. The mechanism responsible for the broad long-wavelength radiation was ascribed to the transitions associated with both the deep-level emissions due to the activation of the native defects on the n-ZnO side surface and the formation of the Ga–O interlayer resulting from the in-diffusion of oxygen atoms to the p-GaN side surface of the n-ZnO/p-GaN interface.

Zinc oxide nanorods/polymer hybrid heterojunctions for white light emitting diodes

Science.gov (United States)

Willander, M.; Nur, O.; Zaman, S.; Zainelabdin, A.; Bano, N.; Hussain, I.

2011-06-01

Zinc oxide (ZnO) with its deep level defect emission covering the whole visible spectrum holds promise for the development of intrinsic white lighting sources with no need of using phosphors for light conversion. ZnO nanorods (NRs) grown on flexible plastic as substrate using a low temperature approach (down to 50 °C) were combined with different organic semiconductors to form hybrid junction. White electroluminescence (EL) was observed from these hybrid junctions. The configuration used for the hybrid white light emitting diodes (LEDs) consists of two-layers of polymers on the flexible plastic with ZnO NRs on the top. The inorganic/organic hybrid heterojunction has been fabricated by spin coating the p-type polymer poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT : PSS) for hole injection with an ionization potential of 5.1 eV and poly(9, 9-dioctylfluorene) (PFO) is used as blue emitting material with a bandgap of 3.3 eV. ZnO NRs are grown on top of the organic layers. Two other configurations were also fabricated; these are using a single MEH PPV (red-emitting polymer) instead of the PFO and the third configuration was obtained from a blend of the PFO and the MEH PPV. The white LEDs were characterized by scanning electron microscope, x-ray diffraction (XRD), current-voltage (I-V) characteristics, room temperature photoluminescence (PL) and EL. The EL spectrum reveals a broad emission band covering the range from 420 to 800 nm, and the emissions causing this white luminescence were identified.

Zinc oxide nanorods/polymer hybrid heterojunctions for white light emitting diodes

International Nuclear Information System (INIS)

Willander, M; Nur, O; Zaman, S; Zainelabdin, A; Bano, N; Hussain, I

2011-01-01

Zinc oxide (ZnO) with its deep level defect emission covering the whole visible spectrum holds promise for the development of intrinsic white lighting sources with no need of using phosphors for light conversion. ZnO nanorods (NRs) grown on flexible plastic as substrate using a low temperature approach (down to 50 0 C) were combined with different organic semiconductors to form hybrid junction. White electroluminescence (EL) was observed from these hybrid junctions. The configuration used for the hybrid white light emitting diodes (LEDs) consists of two-layers of polymers on the flexible plastic with ZnO NRs on the top. The inorganic/organic hybrid heterojunction has been fabricated by spin coating the p-type polymer poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT : PSS) for hole injection with an ionization potential of 5.1 eV and poly(9, 9-dioctylfluorene) (PFO) is used as blue emitting material with a bandgap of 3.3 eV. ZnO NRs are grown on top of the organic layers. Two other configurations were also fabricated; these are using a single MEH PPV (red-emitting polymer) instead of the PFO and the third configuration was obtained from a blend of the PFO and the MEH PPV. The white LEDs were characterized by scanning electron microscope, x-ray diffraction (XRD), current-voltage (I-V) characteristics, room temperature photoluminescence (PL) and EL. The EL spectrum reveals a broad emission band covering the range from 420 to 800 nm, and the emissions causing this white luminescence were identified.

Polymer light emitting diodes

International Nuclear Information System (INIS)

Gautier-Thianche, Emmmanuelle

1998-01-01

We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

Current path in light emitting diodes based on nanowire ensembles

International Nuclear Information System (INIS)

Limbach, F; Hauswald, C; Lähnemann, J; Wölz, M; Brandt, O; Trampert, A; Hanke, M; Jahn, U; Calarco, R; Geelhaar, L; Riechert, H

2012-01-01

Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect. (paper)

Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

2015-12-15

Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

The thermal management of high power light emitting diodes

Science.gov (United States)

Hsu, Ming-Seng; Huang, Jen-Wei; Shyu, Feng-Lin

2012-10-01

Thermal management had an important influence not only in the life time but also in the efficiency of high power light emitting diodes (HPLEDs). 30 watts in a single package have become standard to the industrial fabricating of HPLEDs. In this study, we fabricated both of the AlN porous films, by vacuum sputtering, soldered onto the HPLEDs lamp to enhance both of the heat transfer and heat dissipation. In our model, the ceramic enables transfer the heat from electric device to the aluminum plate quickly and the porous increase the quality of the thermal dissipation between the PCB and aluminum plate, as compared to the industrial processing. The ceramic films were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray diffraction (XRD) diagram analysis reveals those ceramic phases were successfully grown onto the individual substrates. The morphology of ceramic films was investigated by the atomic force microscopy (AFM). The results show those porous films have high thermal conduction to the purpose. At the same time, they had transferred heat and limited work temperature, about 70°, of HPLEDs successfully.

Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

International Nuclear Information System (INIS)

Baik, K.H.; Pearton, S.J.

2009-01-01

The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl 2 -based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl 2 /Ar plasma chemistry and SiO 2 mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry

Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

Directory of Open Access Journals (Sweden)

Hsu Chih-Neng

2013-01-01

Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

International Nuclear Information System (INIS)

Fei-Peng, Chen; Bin, Xu; Wen-Jing, Tian; Zu-Jin, Zhao; Ping, Lü; Chan, Im

2010-01-01

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/tris(8-hydroxyquinolinate)aluminium (Alq 3 )/LiF/A1 exhibits white light emission with Commission Internationale de l'Éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402 cd/m 2 . The investigation reveals that the white light is composed of a blue–green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

Science.gov (United States)

Chen, Fei-Peng; Xu, Bin; Zhao, Zu-Jin; Tian, Wen-Jing; Lü, Ping; Im, Chan

2010-03-01

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/tris(8-hydroxyquinolinate)aluminium (Alq3)/LiF/A1 exhibits white light emission with Commission Internationale de l'Éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402 cd/m2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films.

A highly luminescent dinuclear Eu(III) complex based on 4,4'-bis (4'',4'',4''-trifluoro-1'',3''-dioxobutyl)-o-terphenyl for light-emitting diodes

International Nuclear Information System (INIS)

Liu Shenggui; He Pei; Wang Huihui; Shi Jianxin; Gong Menglian

2009-01-01

A dinuclear Eu(III) complex Eu 2 (btbt) 3 .4H 2 O.CH 3 CH 2 OH.N(CH 2 CH 3 ) 3 was synthesized, where H 2 (btbt) was 4,4'-bis (4'',4'',4'',-trifluoro-1'',3''-dioxobutyl)-o-terphenyl. The composition and structure of the complex were characterized by elemental analysis, IR, UV-vis and FAB-MS spectroscopy. The complex emits the characteristic red luminescence of Eu 3+ ion due to the 5 D 0 → 7 F J (J = 0-4) transitions under ∼395 nm-light excitation with good luminescent quantum efficiency (32%) and exhibits high thermal stability (337 deg. C). Bright red light-emitting diodes (LEDs) were fabricated by coating the complex onto a ∼395 nm-emitting InGaN chip. When the mass ratio of the red phosphor to the silicone is 1:30, the efficiency of the fabricated LEDs with the europium complex is 0.98 lm w -1 . The CIE chromaticity coordinates of the LEDs are x = 0.6057 and y = 0.3137, which are close to the National Television Standard Committee (NTSC) standard values for red color. The results indicate that the complex may act as a red component in the fabrication of near UV InGaN-based white light-emitting diodes with high color-rendering index.

Emulsion Synthesis of Size-Tunable CH3NH3PbBr3 Quantum Dots: An Alternative Route toward Efficient Light-Emitting Diodes.

Science.gov (United States)

Huang, Hailong; Zhao, Fangchao; Liu, Lige; Zhang, Feng; Wu, Xian-gang; Shi, Lijie; Zou, Bingsuo; Pei, Qibing; Zhong, Haizheng

2015-12-30

We report a facile nonaqueous emulsion synthesis of colloidal halide perovskite quantum dots by controlled addition of a demulsifier into an emulsion of precursors. The size of resulting CH3NH3PbBr3 quantum dots can be tuned from 2 to 8 nm by varying the amount of demulsifier. Moreover, this emulsion synthesis also allows the purification of these quantum dots by precipitation from the colloidal solution and obtains solid-state powder which can be redissolved for thin film coating and device fabrication. The photoluminescence quantum yields of the quantum dots is generally in the range of 80-92%, and can be well-preserved after purification (∼80%). Green light-emitting diodes fabricated comprising a spin-cast layer of the colloidal CH3NH3PbBr3 quantum dots exhibited maximum current efficiency of 4.5 cd/A, power efficiency of 3.5 lm/W, and external quantum efficiency of 1.1%. This provides an alternative route toward high efficient solution-processed perovskite-based light-emitting diodes. In addition, the emulsion synthesis is versatile and can be extended for the fabrication of inorganic halide perovskite colloidal CsPbBr3 nanocrystals.

Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

Science.gov (United States)

Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

2018-04-01

Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu

2015-12-22

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

AASERT-97 Development of New Diode Lasers

National Research Council Canada - National Science Library

Peyghambarian, Nasser

2001-01-01

This research explored new ways for diode laser fabrications. Focused was on the development of efficient organic light emitting materials and the fabrication of laser structures incorporating these materials...

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2015-09-30

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Light emitting fabric technologies for photodynamic therapy.

Science.gov (United States)

Mordon, Serge; Cochrane, Cédric; Tylcz, Jean Baptiste; Betrouni, Nacim; Mortier, Laurent; Koncar, Vladan

2015-03-01

Photodynamic therapy (PDT) is considered to be a promising method for treating various types of cancer. A homogeneous and reproducible illumination during clinical PDT plays a determinant role in preventing under- or over-treatment. The development of flexible light sources would considerably improve the homogeneity of light delivery. The integration of optical fiber into flexible structures could offer an interesting alternative. This paper aims to describe different methods proposed to develop Side Emitting Optical Fibers (SEOF), and how these SEOF can be integrated in a flexible structure to improve light illumination of the skin during PDT. Four main techniques can be described: (i) light blanket integrating side-glowing optical fibers, (ii) light emitting panel composed of SEOF obtained by micro-perforations of the cladding, (iii) embroidery-based light emitting fabric, and (iv) woven-based light emitting fabric. Woven-based light emitting fabrics give the best performances: higher fluence rate, best homogeneity of light delivery, good flexibility. Copyright © 2014 Elsevier B.V. All rights reserved.

Fluorescence lifetime imaging using light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A [Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Elson, Daniel S [Institute of Biomedical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Hares, Jonathan D [Kentech Instruments Ltd, Unit 9, Hall Farm Workshops, South Moreton, Didcot, Oxfordshire, OX11 9AG (United Kingdom)], E-mail: gordon.kennedy@imperial.ac.uk

2008-05-07

We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

Science.gov (United States)

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

Energy Technology Data Exchange (ETDEWEB)

Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

2012-09-30

High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

Cyclometalated Iridium(III) Carbene Phosphors for Highly Efficient Blue Organic Light-Emitting Diodes.

Science.gov (United States)

Chen, Zhao; Wang, Liqi; Su, Sikai; Zheng, Xingyu; Zhu, Nianyong; Ho, Cheuk-Lam; Chen, Shuming; Wong, Wai-Yeung

2017-11-22

Five deep blue carbene-based iridium(III) phosphors were synthesized and characterized. Interestingly, one of them can be fabricated into deep blue, sky blue and white organic light-emitting diodes (OLEDs) through changing the host materials and exciton blocking layers. These deep and sky blue devices exhibit Commission Internationale de l'Éclairage (CIE) coordinates of (0.145, 0.186) and (0.152, 0.277) with external quantum efficiency (EQE) of 15.2% and 9.6%, respectively. The EQE of the deep blue device can be further improved up to 19.0% by choosing a host with suitable energy level of its lowest unoccupied molecular orbital (LUMO).

Time-of-flight Measurement Of Hole-tunneling Properties And Emission Color Control In Organic Light-emitting Diodes

Science.gov (United States)

Kurata, K.; Kashiwabara, K.; Nakajima, K.; Mizoguchi, Y.; Ohtani, N.

2011-12-01

Hole transport properties of organic light-emitting diodes (OLEDs) with a thin hole-blocking layer (HBL) were evaluated by time-of-flight measurement. Electroluminescence (EL) spectra of OLEDs with various HBL thicknesses were also evaluated. The results clearly show that the time-resolved photocurrent response and the emission color strongly depend on HBL thickness. This can be attributed to hole-tunneling through the thin HBL. We successfully fabricated a white OLED by controlling the thickness of HBL.

Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

International Nuclear Information System (INIS)

Baek, H I; Lee, C H

2008-01-01

We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy) 3 ) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp 2 Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{4-(N,N-diphenylamino) phenyl}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A -1 (an external quantum efficiency of 8.5%) at 100 cd m -2 and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested

Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

Science.gov (United States)

Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

2017-08-01

A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

Photoresponse of poly(para-phenylenevinylene) light-emitting diodes

International Nuclear Information System (INIS)

Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.

1994-01-01

We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent

Top emitting white OLEDs

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

2009-07-01

Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

Effects of doping parameters on the CIE value of flexible white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Juang Fuhshyang; Lin Mingyein; Yang Chanyi [Institute of Electro-Optical and Materials Science, National Huwei University of Science and Technology, Huwei, Yunlin (Taiwan); Tsai Yusheng [Department of Electro-Optics Engineering, National Huwei University of Science and Technology, Huwei, Yunlin (Taiwan); Lin, David [Windell Corporation, 1F, No. 9, Kung-Yen 7 Road, Industrial Zone, Taichung (Taiwan); Wang Wentunn; Shen Chaiyuan [Electronics Research and Service Organization, Industrial Technology Research Institute, 195 Chung Hsing Rd., Sec. 4 Chu Tung, Hsin Chu (Taiwan)

2004-09-01

Red dopants were doped in different emitters, blue and green, respectively, to fabricate white organic light emitting diodes on flexible substrates. The competitive emission between blue and red emitters with various doped-zones was studied. When the DCJT doped zone was located far away from the hole-injection layer, both the blue and red color can be emitted. An appropriate red-dopant position in the device enhanced the green emission from 8-hydroxyquinoline aluminum (Alq3) which was combined with the red and blue emission to generate a white light. Finally, a white emission with the CIE value, (0.30, 0.32), independent of the applied voltage, was obtained with the optimum doped width and location. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Fabrication study of GaAs mesa diodes for X-ray detection

OpenAIRE

Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

2014-01-01

A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

Multilayer polymer light-emitting diodes by blade coating method

Science.gov (United States)

Tseng, Shin-Rong; Meng, Hsin-Fei; Lee, Kuan-Chen; Horng, Sheng-Fu

2008-10-01

Multilayer polymer light-emitting diodes fabricated by blade coating are presented. Multilayer of polymers can be easily deposited by blade coating on a hot plate. The multilayer structure is confirmed by the total thickness and the cross section view in the scanning electron microscope. The film thickness variation is only 3.3% in 10cm scale and the film roughness is about 0.3nm in the micron scale. The efficiency of single layer poly(para-phenylene vinylene) copolymer Super Yellow and poly(9,9-dioctylfluorene) (PFO, deep blue) devices are 9 and 1.7cd/A, respectively, by blade coating. The efficiency of the PFO device is raised to 2.9cd/A with a 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) hole-blocking layer and to 2.3cd/A with a poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenylamine)] elec-tron-blocking layer added by blade coating.

Blue phosphorescent organic light-emitting diodes using an exciplex forming co-host with the external quantum efficiency of theoretical limit.

Science.gov (United States)

Shin, Hyun; Lee, Sunghun; Kim, Kwon-Hyeon; Moon, Chang-Ki; Yoo, Seung-Jun; Lee, Jeong-Hwan; Kim, Jang-Joo

2014-07-16

A high-efficiency blue-emitting organic light-emitting diode (OLED) approaching theoretical efficiency using an exciplex-forming co-host composed of N,N'-dicarbazolyl-3,5-benzene (mCP) and bis-4,6-(3,5-di-3-pyridylphenyl)- 2-methylpyrimidine (B3PYMPM) is fabricated. Iridium(III)bis[(4,6-difluorophenyl)- pyridinato-N,C2']picolinate (FIrpic) is used as the emitter, which turns out to have a preferred horizontal dipole orientation in the emitting layer. The OLED shows a maximum external quantum efficiency of 29.5% (a maximum current efficiency of 62.2 cd A(-1) ), which is in perfect agreement with the theoretical prediction. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes

International Nuclear Information System (INIS)

Bazan, Guillermo; Mikhailovsky, Alexander

2008-01-01

The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is especially

Light emitting diode package element with internal meniscus for bubble free lens placement

Science.gov (United States)

Tarsa, Eric; Yuan, Thomas C.; Becerra, Maryanne; Yadev, Praveen

2010-09-28

A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portion over the LED chip. A contacting encapsulant is included between the inner encapsulant and optical element.

Organic light emitting diodes with spin polarized electrodes

NARCIS (Netherlands)

Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

2003-01-01

Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

Performance of injection-limited polymer light-emitting diodes

NARCIS (Netherlands)

Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

2002-01-01

The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

Science.gov (United States)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Synthesis and Electroluminescent Property of New Orange Iridium Compounds for Flexible White Organic Light Emitting Diodes.

Science.gov (United States)

Lee, Ho Won; Jeong, Hyunjin; Kim, Young Kwan; Ha, Yunkyoung

2015-10-01

Recently, white organic light-emitting diodes (OLEDs) have aroused considerable attention because they have the potential of next-generation flexible displays and white illuminated applications. White OLED applications are particularly heading to the industry but they have still many problems both materials and manufacturing. Therefore, we proposed that the new iridium compounds of orange emitters could be demonstrated and also applied to flexible white OLEDs for verification of potential. First, we demonstrated the chemical properties of new orange iridium compounds. Secondly, conventional two kinds of white phosphorescent OLEDs were fabricated by following devices; indium-tin oxide coated glass substrate/4,4'-bis[N-(napthyl)-N-phenylamino]biphenyl/N,N'-dicarbazolyl-3,5-benzene doped with blue and new iridium compounds for orange emitting 8 wt%/1,3,5-tris[N-phenylbenzimidazole-2-yl]benzene/lithium quinolate/aluminum. In addition, we fabricated white OLEDs using these emitters to verify the potential on flexible substrate. Therefore, this work could be proposed that white light applications can be applied and could be extended to additional research on flexible applications.

Efficient polymer white-light-emitting diodes with a single-emission layer of fluorescent polymer blend

International Nuclear Information System (INIS)

Niu Qiaoli; Xu Yunhua; Jiang Jiaxing; Peng Junbiao; Cao Yong

2007-01-01

Efficient polymer white-light-emitting diodes (WPLEDs) have been fabricated with a single layer of fluorescent polymer blend. The device structure consists of ITO/PEDOT/PVK/emissive layer/Ba/Al. The emissive layer is a blend of poly(9,9-dioctylfluorene) (PFO), phenyl-substituted PPV derivative (P-PPV) and a copolymer of 9,9-dioctylfluorene and 4,7-di(4-hexylthien-2-yl)-2,1,3-benzothiadiazole (PFO-DHTBT), which, respectively, emits blue, green and red light. The emission of pure and efficient white light was implemented by tuning the blend weight ratio of PFO: P-PPV: PFO-DHTBT to 96:4:0.4. The maximum current efficiency and luminance are, respectively, 7.6 cd/A at 6.7 V and 11930 cd/m 2 at 11.2 V. The CIE coordinates of white-light emission were stable with the drive voltages

Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong-Hoon; Lee, Ki-Heon; Jo, Dae-Yeon; Yang, Heesun, E-mail: hyang@hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Lee, Yangjin; Hwang, Jun Yeon [Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-905 (Korea, Republic of)

2014-09-29

Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In{sub 1−x}−Ga{sub x}−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.

Array of organic thin film transistors integrated with organic light emitting diodes on a plastic substrate

International Nuclear Information System (INIS)

Ryu, Gi-Seong; Choe, Ki-Beom; Song, Chung-Kun

2006-01-01

In order to demonstrate the possible application of an organic thin film transistor (OTFT) to a flexible active matrix organic light emitting diode (OLED) an array of 64 x 64 pixels was fabricated on a 4-in. size poly-ethylene-terephehalate substrate. Each pixel was composed of one OTFT integrated with one OLED. OTFTs successfully drove OLEDs by varying current in a wide range and some images were displayed on the array by emitting green light. The OTFTs used poly(4-vinylphenol) for the gate and pentacene for the semiconductor taking account compatibility with the PET substrate. The average mobility in the array was 0.2 cm 2 /V.s, which was reduced from 1.0 cm 2 /V.s in a single OTFT, and its variation over the entire substrate was 10%

High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

International Nuclear Information System (INIS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-01-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

Energy Technology Data Exchange (ETDEWEB)

Baek, H I; Lee, C H [School of Electrical Engineering and Computer Science and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)], E-mail: hibaek75@snu.ac.kr

2008-05-21

We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy){sub 3}) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp{sub 2}Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{l_brace}4-(N,N-diphenylamino) phenyl{r_brace}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A{sup -1} (an external quantum efficiency of 8.5%) at 100 cd m{sup -2} and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested.

Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

International Nuclear Information System (INIS)

Cho, Joong-yeon; Park, Sang-Jun; Ahn, Jinho; Lee, Heon

2014-01-01

In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%

Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Cho, Joong-yeon; Park, Sang-Jun [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2014-11-03

In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

Science.gov (United States)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Organic semiconductor heterojunctions and its application in organic light-emitting diodes

CERN Document Server

Ma, Dongge

2017-01-01

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

Science.gov (United States)

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Safety of light emitting diodes in toys.

Science.gov (United States)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-03-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Safety of light emitting diodes in toys

International Nuclear Information System (INIS)

Higlett, M P; O'Hagan, J B; Khazova, M

2012-01-01

Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

2017-01-01

Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

2018-02-02

Feb 2, 2018 ... emitting diode (OLED) can be enhanced by using light- extraction ... to grow, ω should posses a positive value, which is possible only when ∂φ/∂h < 0, .... To detect small changes, first, the source LED was sta- bilized by ...

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo

2010-01-26

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We demonstrate organic light-emitting diodes with solution-processed graphene thin film transparent conductive anodes. The graphene electrodes were deposited on quartz substrates by spincoating of an aqueous dispersion of functionalized graphene, followed by a vacuum anneal step to reduce the sheet resistance. Small molecular weight organic materials and a metal cathode were directly deposited on the graphene anodes, resulting in devices with a performance comparable to control devices on indium-tin-oxide transparent anodes. The outcoupling efficiency of devices on graphene and indium-tin-oxide is nearly identical, in agreement with model predictions. © 2010 American Chemical Society.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Science.gov (United States)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

International Nuclear Information System (INIS)

Zhen, Aigong; Ma, Ping; Zhang, Yonghui; Guo, Enqing; Tian, Yingdong; Liu, Boting; Guo, Shikuan; Shan, Liang; Wang, Junxi; Li, Jinmin

2014-01-01

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal could improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically

Experimental study of the organic light emitting diode with a p-type silicon anode

International Nuclear Information System (INIS)

Ma, G.L.; Xu, A.G.; Ran, G.Z.; Qiao, Y.P.; Zhang, B.R.; Chen, W.X.; Dai, L.; Qin, G.G.

2006-01-01

We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO 2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m 2 at 17 V and 1800 mA/cm 2 , the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO 2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

2015-02-28

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Non-radiative recombination losses in polymer light-emitting diodes

NARCIS (Netherlands)

Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

Liquid metals as electrodes in polymer light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Gommans, H.H.P.; Denier van der Gon, A.W.; Brongersma, H.H.

2003-01-01

We demonstrate that liquid metals can be used as cathodes in light emitting diodes (pLEDs). The main difference between the use of liquid cathodes and evaporated cathodes is the sharpness of the metal–polymer interface. Liquid metal cathodes result in significantly sharper metal–organic interfaces

High-performance organic light-emitting diodes comprising ultrastable glass layers

Science.gov (United States)

Rodríguez-Viejo, Javier

2018-01-01

Organic light-emitting diodes (OLEDs) are one of the key solid-state light sources for various applications including small and large displays, automotive lighting, solid-state lighting, and signage. For any given commercial application, OLEDs need to perform at their best, which is judged by their device efficiency and operational stability. We present OLEDs that comprise functional layers fabricated as ultrastable glasses, which represent the thermodynamically most favorable and, thus, stable molecular conformation achievable nowadays in disordered solids. For both external quantum efficiencies and LT70 lifetimes, OLEDs with four different phosphorescent emitters show >15% enhancements over their respective reference devices. The only difference to the latter is the growth condition used for ultrastable glass layers that is optimal at about 85% of the materials’ glass transition temperature. These improvements are achieved through neither material refinements nor device architecture optimization, suggesting a general applicability of this concept to maximize the OLED performance, no matter which specific materials are used. PMID:29806029

Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

KAUST Repository

Wu, Junbo; Agrawal, Mukul; Becerril, Héctor A.; Bao, Zhenan; Liu, Zunfeng; Chen, Yongsheng; Peumans, Peter

2010-01-01

Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We

Evaluation of light-emitting diode beacon light fixtures : final report.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Simple process of hybrid white quantum dot/organic light-emitting diodes by using quantum dot plate and fluorescence

Science.gov (United States)

Lee, Ho Won; Lee, Ki-Heon; Lee, Jae Woo; Kim, Jong-Hoon; Yang, Heesun; Kim, Young Kwan

2015-02-01

In this work, the simple process of hybrid quantum dot (QD)/organic light-emitting diode (OLED) was proposed to apply a white illumination light by using QD plate and organic fluorescence. Conventional blue fluorescent OLEDs were firstly fabricated and then QD plates of various concentrations, which can be controlled of UV-vis absorption and photoluminescence spectrum, were attached under glass substrate of completed blue devices. The suggested process indicates that we could fabricate the white device through very simple process without any deposition of orange or red organic emitters. Therefore, this work would be demonstrated that the potential simple process for white applications can be applied and also can be extended to additional research on light applications.

Efficient organic light emitting-diodes (OLEDs)

CERN Document Server

Chang, Yi-Lu

2015-01-01

Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

Green synthetic strategy of BCNO nanostructure and phosphor-based light – Emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kang, Yue [The Quartermaster Research Institute of General Logistics Department, Beijing 100010 (China); Yuan, Bo [Chemical Defense Institute of China, Beijing 100010 (China); Zhang, Dongjiu [Key Laboratory of Space Launching Site Reliability Technology, Hainan 570100 (China); Ma, Tian; Huang, Xiancong [The Quartermaster Research Institute of General Logistics Department, Beijing 100010 (China); Chu, Zengyong [College of Science, National University of Defense Technology, Changsha 410073 (China); Lai, Kan [The Quartermaster Research Institute of General Logistics Department, Beijing 100010 (China)

2016-11-15

BCNO phosphor has been paid much attention due to their unique physical, electronic and optical properties. Here we have successfully obtained BCNO nano-particle phosphor by microwave treating from boric acid, urea, and glucose at low temperatures and in short reaction time. Glucose decomposed into graphene quantum dots (GQDs), which facilitated the formation of hexagonal boron nitride (h-BN). Through our method, GQDs domains were uniformly incorporated into h-BN, leading to the formation of BCNO and decrease of bandgap. BCNO demonstrated excellent performance in light emitting diodes (LEDs) with green and blue light. We envision that this BCNO phosphor will enable the next generation blue and green LED devices due to the easiness of large scale fabrication at an economic cost.

Green synthetic strategy of BCNO nanostructure and phosphor-based light – Emitting diodes

International Nuclear Information System (INIS)

Kang, Yue; Yuan, Bo; Zhang, Dongjiu; Ma, Tian; Huang, Xiancong; Chu, Zengyong; Lai, Kan

2016-01-01

BCNO phosphor has been paid much attention due to their unique physical, electronic and optical properties. Here we have successfully obtained BCNO nano-particle phosphor by microwave treating from boric acid, urea, and glucose at low temperatures and in short reaction time. Glucose decomposed into graphene quantum dots (GQDs), which facilitated the formation of hexagonal boron nitride (h-BN). Through our method, GQDs domains were uniformly incorporated into h-BN, leading to the formation of BCNO and decrease of bandgap. BCNO demonstrated excellent performance in light emitting diodes (LEDs) with green and blue light. We envision that this BCNO phosphor will enable the next generation blue and green LED devices due to the easiness of large scale fabrication at an economic cost.

Design and fabrication of metal-insulator-metal diode for high frequency applications

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

Science.gov (United States)

Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

2015-04-22

Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

Improving the color purity and efficiency of blue organic light-emitting diodes (BOLED) by adding hole-blocking layer

International Nuclear Information System (INIS)

Huang, C.J.; Kang, C.C.; Lee, T.C.; Chen, W.R.; Meen, T.H.

2009-01-01

This work demonstrates the fabrication of a bright blue organic light-emitting diode (BOLED) with good color purity using 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl (DPVBi) and bathocuproine (BCP) as the emitting layer (EML) and the hole-blocking layer (HBL), respectively. Devices were prepared by vacuum deposition on indium tin oxide (ITO)-glass substrates. The thickness of DPVBi used in the OLED has an important effect on color and efficiency. The blue luminescence is maximal at 7670 cd/m 2 when 13 V is applied and the BCP thickness is 2 nm. The CIE coordinate at a luminance of 7670 cd/m 2 is (0.165, 0.173). Furthermore, the current efficiency is maximum at 4.25 cd/A when 9 V is applied.

The Light-Emitting Diode as a Light Detector

Science.gov (United States)

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

DEFF Research Database (Denmark)

Mesta, Murat; Carvelli, Marco; de Vries, Rein J

2013-01-01

we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

Fabrication and characterization of organic light-emitting diodes using zinc complexes as hole-blocking layer.

Science.gov (United States)

Kim, Won Sam; You, Jung Min; Lee, Burm-Jong; Jang, Yoon-Ki; Kim, Dong-Eun; Kwon, Young-Soo

2006-11-01

2-(2-Hydroxyphenyl)benzoxazole (HPB) was employed as organic ligand and the corresponding zinc complexes (Zn(HPB)2 and Zn(HPB)q) were synthesized. And their EL properties were characterized. The structures of zinc complexes were determined with FT-NMR, FT-IR, UV-Vis, and XPS. The thermal stability showed up to about 300 degrees C under nitrogen flow, which was measured by TGA. The photoluminescence (PL) of zinc complexes were measured from the DMF solution. The PL emitted in blue and yellow region, respectively. The EL devices were fabricated by the vacuum deposition. Two kinds of OLEDs devices were fabricated; ITO/NPB (40 nm)/Zn complexes (60 nm)/LiF/Al and ITO/NPB (40 nm)/Alq3 (60 nm)/Zn complexes (5 nm)/LiF/Al. Both of the EL properties as the emitting and the hole-blocking layer were investigated. The EL emission of Zn(HPB)q exhibited green light centered at 532 nm. The device showed a turn-on voltage at 5 V and a luminance of 6073 cd/m2 at 10 V. Meanwhile, the maximum EL the emission of the Zn(HPB)2 device was found to be at 447 nm. And the device showed a luminance of 2813 cd/m2 at 10 V. The ITO/NPB (40 nm)/Alq3 (60 nm)/Zn(HPB)2 (5 nm)/LiF/Al device showed increased luminance of L=17000 cd/m2 compared to L=12000 cd/m2 for similar device fabricated without the hole-blocking layer. And the turn-on voltage was significantly affected by the existence of the hole-blocking layer.

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

Directory of Open Access Journals (Sweden)

N. K. Zhumashev

2016-01-01

Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

2017-06-15

Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Cold welding of organic light emitting diode: Interfacial and contact models

Directory of Open Access Journals (Sweden)

J. Asare

2016-06-01

Full Text Available This paper presents the results of an analytical and computational study of the contacts and interfacial fracture associated with the cold welding of Organic Light Emitting diodes (OLEDs. The effects of impurities (within the possible interfaces are explored for contacts and interfacial fracture between layers that are relevant to model OLEDs. The models are used to study the effects of adhesion, pressure, thin film layer thickness and dust particle modulus (between the contacting surfaces on contact profiles around impurities between cold-welded thin films. The lift-off stage of thin films (during cold welding is then modeled as an interfacial fracture process. A combination of adhesion and interfacial fracture theories is used to provide new insights for the design of improved contact and interfacial separation during cold welding. The implications of the results are discussed for the design and fabrication of cold welded OLED structures.

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

International Nuclear Information System (INIS)

Xu, Bing; Zhao, Jun Liang; Dai, Hai Tao; Wang, Shu Guo; Lin, Ray-Ming; Chu, Fu-Chuan; Huang, Chou-Hsiung; Yu, Sheng-Fu; Sun, Xiao Wei

2014-01-01

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment

Influence of Pre-trimethylindium flow treatment on blue light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Xu, Bing; Zhao, Jun Liang [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Dai, Hai Tao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Wang, Shu Guo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Lin, Ray-Ming, E-mail: rmlin@mail.cgu.edu.tw [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Chu, Fu-Chuan; Huang, Chou-Hsiung [Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan (China); Yu, Sheng-Fu [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Sun, Xiao Wei, E-mail: xwsun@sustc.edu.cn [South University of Science and Technology of China, Shenzhen, Guangdong (China)

2014-01-31

The effects of Pre-trimethylindium (TMIn) flow treatment prior to quantum well growth on blue light emitting diode properties were investigated. High-resolution X-ray diffraction indicated that Pre-TMIn flow treatment did not change the composition of indium in quantum wells, but influenced electrical and optical properties of blue light emitting diode. Electroluminescence exhibited redshift with increasing TMIn treatment time. Though, the forward voltage became a little larger with longer Pre-TMIn treatment time due to the slight phase separation and indium aggregation, the efficiency droop of the device was improved effectively. - Highlights: • Pre-trimethylindium treatment can lead to longer wavelength. • External quantum efficiency can be improved effectively. • Electrical properties are not decreased using Pre-trimethylindium treatment.

Improvement in light-extraction efficiency of light emitting diode ...

Indian Academy of Sciences (India)

The effect of various microlens parameters such as diameter and area fraction on light-extraction efficiency was systematically studied. Improvement of 4% in extraction efficiency was obtained by employing it on white light emitting diode. The area fraction of microlenses was increased up to 0.34 by reducing the spin speed.

Tuning the colour of white polymer light emitting diodes

NARCIS (Netherlands)

Kok, M.M. de; Sarfert, W.; Paetzold, R.

2010-01-01

Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

International Nuclear Information System (INIS)

Hong, Lin-Ann; Vu, Hoang-Tuan; Juang, Fuh-Shyang; Lai, Yun-Jr; Yeh, Pei-Hsun; Tsai, Yu-Sheng

2013-01-01

Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm 2 , and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Hong, Lin-Ann; Vu, Hoang-Tuan [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Juang, Fuh-Shyang, E-mail: fsjuang@seed.net.tw [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Lai, Yun-Jr [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Yeh, Pei-Hsun [Raystar Optronics, Inc., 5F No. 25, Keya Rd. Daya Township, Taichung County, Taiwan (China); Tsai, Yu-Sheng [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China)

2013-10-01

Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm{sup 2}, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

Atom probe tomography of a commercial light emitting diode

International Nuclear Information System (INIS)

Larson, D J; Prosa, T J; Olson, D; Lawrence, D; Clifton, P H; Kelly, T F; Lefebvre, W

2013-01-01

The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A. [Novosibirsk State Technical University (Russian Federation); Shamirzaev, T. S. [Russian Academy of Science, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2016-11-15

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.

Top-Emission Organic Light Emitting Diode Fabrication Using High Dissipation Graphite Substrate

Directory of Open Access Journals (Sweden)

Yu-Sheng Tsai

2014-01-01

Full Text Available This study uses a synthetic graphite fiber as the heat dissipation substrate for top-emission organic light emitting diode (TEOLED to reduce the impact from joule heat. UV glue (YCD91 was spin coated onto the substrate as the insulation layer. The TEOLED structure is (glass; copper; graphite substrate/YCD91 glue/Al/Au/EHI608/TAPC/Alq3/LiF/Al/Ag. The proposed graphite fiber substrate presents better luminous performance compared with glass and copper substrate devices with luminance of 3055 cd/m2 and current efficiency of 6.11 cd/A at 50 mA/cm2. When lighting period of different substrates TEOLED, the substrate case back temperature was observed using different lighting periods. A glass substrate element operating from 5 to 25 seconds at 3000 cd/m2 luminance produced a temperature rate of 1.207°C/sec. Under 4000 cd/m2 luminance the copper and graphite substrate temperature rates were 0.125°C/sec and 0.088°C/sec. Graphite component lifetime was determined to be 1.875 times higher than the glass components and 1.125 times higher than that of copper.

The efficiency challenge of nitride light-emitting diodes for lighting

KAUST Repository

Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio; Iveland, Justin; Peretti, Jacques; Speck, James S.

2015-01-01

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

International Nuclear Information System (INIS)

Miao Yan-Qin; Zhang Ai-Qin; Li Yuan-Hao; Wang Hua; Jia Hu-Sheng; Liu Xu-Guang; Gao Zhi-Xiang; Tsuboi Taijuf

2015-01-01

Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4’-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7, 7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi (2,2’,2”-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. (paper)

All-solution processed composite hole transport layer for quantum dot light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiaoli [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Synergetic Innovation Center of Chemical Science and Engineering, Tianjin (China); Dai, Haitao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Zhao, Junliang; Wang, Shuguo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Sun, Xiaowei [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, Tangchang Road 1088, Shenzhen, Guangdong 518055 (China)

2016-03-31

In the present work, poly-TPD and TCTA composite hole transport layer (HTL) was employed in solution processed CdSe/ZnS quantum dot light emitting diodes (QLEDs). As the doping level of TCTA can determine the carriers transport efficiency of HTL, the proper mixing ratio of TCTA and poly-TPD should be found to optimize the performance of composite HTL for QLEDs. The doping of poly-TPD by low TCTA content can make its HOMO level lower and then reduce the energy barrier height from HTL to quantum dots (QDs), whereas the doping of poly-TPD by the concentrated TCTA results in the degraded performance of QLEDs due to its decreased hole transport mobility. By using the optimized composition with poly-TPD:TCTA (3:1) as the hole transport layer, the luminescence of the device exhibits about double enhancement compared with that of poly-TPD based device. The improvement of luminescence is mainly attributed to the lower energy barrier of hole injection. The Förster resonant energy transfer (FRET) mechanism in the devices was investigated through theoretical and experimental analysis and the results indicate that the TCTA doping makes no difference on FRET. Therefore, the charge injection mechanism dominates the improved performance of the devices. - Highlights: • Quantum dot light emitting diodes (QLEDs) were fabricated by all solution method. • The performance of QLEDs was optimized by varying the composite hole transport layer. • The blend HTL could promote hole injection by optimizing HOMO levels. • The energy transfer mechanism was analyzed by studying Förster resonant energy transfer process.

Is it viable to improve light output efficiency by nano-light-emitting diodes?

Energy Technology Data Exchange (ETDEWEB)

Wang, Chao-Hung; Huang, Yu-Wen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Wu, Shang-En [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China); Liu, Chuan-Pu, E-mail: cpliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-12-02

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 10{sup 9} cm{sup −2} with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.

Organic Light-Emitting Diodes Based on Phthalimide Derivatives: Improvement of the Electroluminescence Properties

Directory of Open Access Journals (Sweden)

Frédéric Dumur

2018-03-01

Full Text Available In this study, a phthalimide-based fluorescent material has been examined as a green emitter for multilayered organic light-emitting diodes (OLEDs. By optimizing the device stacking, a maximum brightness of 28,450 cd/m2 at 11.0 V and a maximum external quantum efficiency of 3.11% could be obtained. Interestingly, OLEDs fabricated with Fluo-2 presented a 20-fold current efficiency improvement compared to the previous results reported in the literature, evidencing the crucial role of the device stacking in the electroluminescence (EL performance of a selected emitter. Device lifetime was also examined and an operational stability comparable to that reported for a standard triplet emitter i.e., bis(4-methyl-2,5-diphenyl-pyridineiridium(III acetylacetonate [(mdppy2Iracac] was evidenced.

Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

International Nuclear Information System (INIS)

Huang, H.W.; Lin, C.H.; Huang, J.K.; Lee, K.Y.; Lin, C.F.; Yu, C.C.; Tsai, J.Y.; Hsueh, R.; Kuo, H.C.; Wang, S.C.

2009-01-01

In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

Energy Technology Data Exchange (ETDEWEB)

Wang, Peng [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Tieqiang [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China)

2016-08-08

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

International Nuclear Information System (INIS)

Wang, Peng; Bai, Xue; Sun, Chun; Zhang, Xiaoyu; Zhang, Yu; Zhang, Tieqiang

2016-01-01

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Science.gov (United States)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Improving the color purity and efficiency of blue organic light-emitting diodes (BOLED) by adding hole-blocking layer

Energy Technology Data Exchange (ETDEWEB)

Huang, C.J., E-mail: chien@nuk.edu.t [Department of Applied Physics, National University of Kaohsiung, 700 Kaohsiung University Road, Nan-Tzu, Kaohsiung, Taiwan (China); Kang, C.C. [Department of Electro-Optical Engineering, Southern Taiwan University of Technology, 1 Nan-Tai St., Yung-Kang City, Tainan, Taiwan (China); Lee, T.C. [Department of Electrical Engineering, Southern Taiwan University of Technology, 1 Nan-Tai St., Yung-Kang City, Tainan, Taiwan (China); Chen, W.R.; Meen, T.H. [Department of Electronic Engineering, National Formosa University, 64 Wen-Hwa Road, Hu-Wei, Yunlin, Taiwan (China)

2009-11-15

This work demonstrates the fabrication of a bright blue organic light-emitting diode (BOLED) with good color purity using 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl (DPVBi) and bathocuproine (BCP) as the emitting layer (EML) and the hole-blocking layer (HBL), respectively. Devices were prepared by vacuum deposition on indium tin oxide (ITO)-glass substrates. The thickness of DPVBi used in the OLED has an important effect on color and efficiency. The blue luminescence is maximal at 7670 cd/m{sup 2} when 13 V is applied and the BCP thickness is 2 nm. The CIE coordinate at a luminance of 7670 cd/m{sup 2} is (0.165, 0.173). Furthermore, the current efficiency is maximum at 4.25 cd/A when 9 V is applied.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Utilization of solvothermally grown InP/ZnS quantum dots as wavelength converters for fabrication of white light-emitting diodes.

Science.gov (United States)

Jang, Eun-Pyo; Yang, Heesun

2013-09-01

This work reports on a simple solvothermal synthesis of InP/ZnS core/shell quantum dots (QDs) using a much safer and cheaper phosphorus precursor of tris(dimethylamino)phosphine than the most popularly chosen tris(trimethylsilyl)phosphine. The band gap of InP QDs is facilely controlled by varying the solvothermal core growth time (4 vs. 6 h) with a fixed temperature of 150 degrees C, and the successive solvothermal ZnS shelling at 220 degrees C for 6 h results in green- and yellow-emtting InP/ZnS QD with emission quantum yield of 41-42%. The broad size distribution of as-synthesized InP/ZnS QDs, which appears to be inherent in the current solvothermal approach, is improved by a size-selective sorting procedure, and the emission properties of the resulting size-sorted QD fractions are investigated. To produce white emission for general lighting source, a blue light-emitting diode (LED) is combined with non-size-soroted green or yellow QDs as wavelength converters. Furthermore, the QD-LED that includes a blend of green and yellow QDs is fabricated to generate a white lighting source with an enhanced color rendering performance, and its electroluminescent properties are characterized in detail.

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Science.gov (United States)

Masui, Hisashi; Fellows, Natalie N.; Sato, Hitoshi; Asamizu, Hirokuni; Nakamura, Shuji; Denbaars, Steven P.

2007-08-01

A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.

Electrical aging effect of ZnS based quantum dots for white light-emitting diodes

Science.gov (United States)

Kim, Yohan; Ippen, Christian; Greco, Tonino; Jang, Ilwan; Park, Sungkyu; Oh, Min Suk; Han, Chul Jong; Lee, Jeongno; Wedel, Armin; Kim, Jiwan

2014-03-01

The present work reports cadmium-free colloidal ZnS:Al quantum dot (QD) based white quantum dot light-emitting diodes (QD-LEDs). The device was fabricated with a structure of ITO/PEDOT:PSS/PVK/QDs/TPBi/LiF/Al using synthesized ZnS:Al QDs which has 393 nm of peak wavelength and sub peaks in visible wavelength. White emission with high color rending index (CRI) was achieved by the combination of blue emission from PVK and ZnS:Al QDs, electroplex emission at the interface between PVK and ZnS:Al QDs, and Al traps/defects emission, which are controlled by electrical aging effect. The characteristic of our device shows the potential for spectrum tunable and Cd-free white QD-LEDs in the near future.

Experimental analysis of dark frame growth mechanism in organic light-emitting diodes

Science.gov (United States)

Minagawa, Masahiro; Tanabe, Takuma; Kondo, Eiki; Kamimura, Kenji; Kimura, Munehiro

2018-02-01

Organic light-emitting diodes (OLEDs) were fabricated with heterojunction interfaces and layers that were prepared by cold isostatic pressing (CIP), and the growth characteristics of their non-emission areas, or dark frames (D/Fs), were investigated during storage. We fabricated an OLED with an indium-tin-oxide (ITO)/N,N‧-di(1-naphthyl)-N,N‧-diphenyl-(1,1‧-biphenyl)-4,4‧-diamine (α-NPD)/tris(8-hydroxylquinoline)aluminum (Alq3)/LiF/Al structure without CIP treatment (Device I), as well as OLEDs that were pressed after the deposition of α-NPD (Device II), Alq3 (Device III), and LiF/Al (Device IV) layers. Although Devices I, II, and III showed typical D/F growth characteristics, the D/F growth rate in Device IV was markedly mitigated, indicating that the Alq3/LiF/Al interfaces dominated the D/F growth. Moreover, we found that the electron injection characteristic was poorer in the electron-only device stored after the LiF layer deposition than in that stored before the LiF deposition. Therefore, the decreased electron injection due to storage at the interfaces was attributed to the D/F growth.

Facile solution-processed aqueous MoOx for feasible application in organic light-emitting diode

Science.gov (United States)

Zheng, Qinghong; Qu, Disui; Zhang, Yan; Li, Wanshu; Xiong, Jian; Cai, Ping; Xue, Xiaogang; Liu, Liming; Wang, Honghang; Zhang, Xiaowen

2018-05-01

Solution-processed techniques attract increasing attentions in organic electronics for their low-cost and scalable manufacturing. We demonstrate the favorite hole injection material of solution-processed aqueous MoOx (s-MoOx) with facile fabrication process and cast successful application to constructing efficient organic light-emitting diodes (OLEDs). Atomic force microscopy and X-ray photoelectron spectroscopy analysis show that s-MoOx behaves superior film morphology and non-stoichiometry with slight oxygen deficiency. With tris(8-hydroxy-quinolinato)aluminium as emitting layer, s-MoOx based OLED shows maximum luminous efficiency of 7.9 cd/A and power efficiency of 5.9 lm/W, which have been enhanced by 43.6% and 73.5%, respectively, in comparison with the counterpart using conventional vacuum thermal evaporation MoOx. Current-voltage, impedance-voltage, phase-voltage and capacitance-voltage characteristics of hole-only devices indicate that s-MoOx with two processes of "spin-coating/annealing" shows mostly enhanced hole injection capacity and thus promoting device performance. Our experiments provide an alternative approach for constructing efficient OLED with solution process.

Fabrication and characterization of WO3/Ag/WO3 multilayer transparent anode with solution-processed WO3 for polymer light-emitting diodes.

Science.gov (United States)

Jeon, Kangmin; Youn, Hongseok; Kim, Seongbeom; Shin, Seongbeom; Yang, Minyang

2012-05-15

The dielectric/metal/dielectric multilayer is suitable for a transparent electrode because of its high-optical and high-electrical properties; however, it is fabricated by an expensive and inefficient multistep vacuum process. We present a WO3/Ag/WO3 (WAW) multilayer transparent anode with solution-processed WO3 for polymer light-emitting diodes (PLEDs). This WAW multilayer not only has high transmittance and low resistance but also can be easily and rapidly fabricated. We devised a novel method to deposit a thin WO3 layer by a solution process in an air environment. A tungstic acid solution was prepared from an aqueous solution of Na2WO4 and then converted to WO3 nanoparticles (NPs) by a thermal treatment. Thin WO3 NP layers form WAW multilayer with a thermal-evaporated Ag layer, and they improve the transmittance of the WAW multilayer because of its high transmittance and refractive index. Moreover, the surface of the WO3 layer is homogeneous and flat with low roughness because of the WO3 NP generation from the tungstic acid solution without aggregation. We performed optical simulation and experiments, and the optimized WAW multilayer had a high transmittance of 85% with a sheet resistance of 4 Ω/sq. Finally, PLEDs based on the WAW multilayer anode achieved a maximum luminance of 35,550 cd/m2 at 8 V, and this result implies that the solution-processed WAW multilayer is appropriate for use as a transparent anode in PLEDs.

Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

International Nuclear Information System (INIS)

Mohsennia, M.; Bidgoli, M. Massah; Boroumand, F. Akbari; Nia, A. Mohsen

2015-01-01

Graphical abstract: The PANI prepared at 15 °C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. - Highlights: • Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25 °C). • The PANI sample with higher electrical conductivity was used as HIL in the PLED devices. • The PANI injection layer yielded higher current and lower turn-on voltage. • The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated. • The J–V characteristics of the devices have been explained by FN tunneling model. - Abstract: Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25 °C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15 °C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer

Polymer Light-Emitting Diode Prepared by Floating-Off Film-Transfer Technique

KAUST Repository

Park, Jihoon; Kim, Eugene

2015-01-01

© 2015 Copyright Taylor & Francis Group, LLC. Floating-off film-transfer technique was used for the formation of semiconducting polymer multi-layers and the effect on the performance of polymer light-emitting diode (PLED) was studied. This method

Interference phenomenon determines the color in an organic light emitting diode

Science.gov (United States)

Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

1997-06-01

We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

Emerging Transparent Conducting Electrodes for Organic Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Tze-Bin Song

2014-03-01

Full Text Available Organic light emitting diodes (OLEDs have attracted much attention in recent years as next generation lighting and displays, due to their many advantages, including superb performance, mechanical flexibility, ease of fabrication, chemical versatility, etc. In order to fully realize the highly flexible features, reduce the cost and further improve the performance of OLED devices, replacing the conventional indium tin oxide with better alternative transparent conducting electrodes (TCEs is a crucial step. In this review, we focus on the emerging alternative TCE materials for OLED applications, including carbon nanotubes (CNTs, metallic nanowires, conductive polymers and graphene. These materials are selected, because they have been applied as transparent electrodes for OLED devices and achieved reasonably good performance or even higher device performance than that of indium tin oxide (ITO glass. Various electrode modification techniques and their effects on the device performance are presented. The effects of new TCEs on light extraction, device performance and reliability are discussed. Highly flexible, stretchable and efficient OLED devices are achieved based on these alternative TCEs. These results are summarized for each material. The advantages and current challenges of these TCE materials are also identified.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya

2017-05-08

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

KAUST Repository

Prabaswara, Aditya; Ng, Tien Khee; Zhao, Chao; Janjua, Bilal; Alyamani, Ahmed; El-desouki, Munir; Ooi, Boon S.

2017-01-01

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

Design, fabrication and testing of a thermal diode

Science.gov (United States)

Swerdling, B.; Kosson, R.

1972-01-01

Heat pipe diode types are discussed. The design, fabrication and test of a flight qualified diode for the Advanced Thermal Control Flight Experiment (ATFE) are described. The review covers the use of non-condensable gas, freezing, liquid trap, and liquid blockage techniques. Test data and parametric performance are presented for the liquid trap and liquid blockage techniques. The liquid blockage technique was selected for the ATFE diode on the basis of small reservoir size, low reverse mode heat transfer, and apparent rapid shut-off.

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

International Nuclear Information System (INIS)

Fang Hao; Long Hao; Sang Li-Wen; Qi Sheng-Li; Xiong Chang; Yu Tong-Jun; Yang Zhi-Jian; Zhang Guo-Yi

2011-01-01

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm 2 /(V·s) and 460 Ω/□ respectively. Owing to the significant effect of the SiN x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A new fabrication technique for back-to-back varactor diodes

Science.gov (United States)

Smith, R. Peter; Choudhury, Debabani; Martin, Suzanne; Frerking, Margaret A.; Liu, John K.; Grunthaner, Frank A.

1992-01-01

A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

KAUST Repository

Muhammed, Mufasila

2017-09-11

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.

Science.gov (United States)

Muhammed, Mufasila M; Alwadai, Norah; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S

2017-10-04

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga 2 O 3 ) substrate, obtained using a straightforward growth process that does not require a high-cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multiquantum well (MQW) grown on the masked β-Ga 2 O 3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ∼86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

KAUST Repository

Muhammed, Mufasila; Alwadai, Norah Mohammed Mosfer; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S.

2017-01-01

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

Enhanced life time and suppressed efficiency roll-off in phosphorescent organic light-emitting diodes with multiple quantum well structures

Directory of Open Access Journals (Sweden)

Ja-Ryong Koo

2012-03-01

Full Text Available We demonstrate red phosphorescent organic light-emitting diodes (OLEDs with multiple quantum well structures which confine triplet exciton inside an emitting layer (EML region. Five types of OLEDs, from a single to five quantum wells, are fabricated with charge control layers to produce high efficiencies, and the performance of the devices is investigated. The improved quantum efficiency and lifetime of the OLED with four quantum wells, and its suppressed quantum efficiency roll-off of 17.6%, can be described by the increased electron–hole charge balance owing to the bipolar property as well as the efficient triplet exciton confinement within each EML, and by prevention of serious triplet–triplet and/or triplet–polaron annihilation as well as the Förster self-quenching due to charge control layers.

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

Science.gov (United States)

Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2017-05-09

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

Science.gov (United States)

Chondroudis, Konstantinos; Mitzi, David B.

2000-01-01

The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

Efficient textured colour conversion layer of a down-converted white organic light-emitting diode by transfer imprinting

International Nuclear Information System (INIS)

Zhu, Wenqing; Xiao, Teng; Qian, Bingjie; Sun, Liangliang

2015-01-01

In this paper, we demonstrated an efficient textured colour conversion layer (CCL) of a down-converted white organic light-emitting diode (WOLED), which was fabricated by a very simple transfer imprinting method based on silicon wafer. The textured CCL not only helped to extract wave-guided light in the device, but also had an outstanding performance in enhancing the colour conversion rate, which was 1.75 times greater than that of flat CCL. Compared to flat CCL, the lower-doped textured CCL produced better white emission and higher efficiency simultaneously. Moreover, the WOLED with textured CCL also exhibited good colour stability at various voltages. (paper)

Synthesis Alq3and effect of concentration iton optical and electrical performance of Organic Light Emitting Diodes withtwo single-layer mixture and multilayer structures

Directory of Open Access Journals (Sweden)

Mohammadreza Jafari

2017-05-01

Full Text Available In this article, organic light emitting diode with the two structures of ITO / PEDOT: PSS /PVK/Alq3/PBD/Al and ITO/PEDOT: PSS/PVK: Alq3: PBD/Alwith different concentrations were fabricated. The effects of concentration of Alq3 complex on the characteristics of diodes, which were made, were studied. Layers with the same weight percentages PVK, PBD and different wt. %Alq3 by spin coating on PEDOT: PSS layer was deposited. Current - voltage characteristic curve - and luminescence (El were studied. Experimental results showed that by increasing the concentration of the Alq3complexin both structure, luminescence increased and the operating voltage is reduced.

Plasmonic Perovskite Light-Emitting Diodes Based on the Ag-CsPbBr3 System.

Science.gov (United States)

Zhang, Xiaoli; Xu, Bing; Wang, Weigao; Liu, Sheng; Zheng, Yuanjin; Chen, Shuming; Wang, Kai; Sun, Xiao Wei

2017-02-08

The enhanced luminescence through semiconductor-metal interactions suggests the great potential of device performance improvement via properly tailored plasmonic nanostructures. Surface plasmon enhanced electroluminescence in an all-inorganic CsPbBr 3 perovskite light-emitting diode (LED) is fabricated by decorating the hole transport layer with the synthesized Ag nanorods. An increase of 42% and 43.3% in the luminance and efficiency is demonstrated for devices incorporated with Ag nanorods. The device with Ag introduction indicates identical optoelectronic properties to the controlled device without Ag nanostructures. The increased spontaneous emission rate caused by the Ag-induced plasmonic near-field effect is responsible for the performance enhancement. Therefore, the plasmonic Ag-CsPbBr 3 nanostructure studied here provides a novel strategy on the road to the future development of perovskite LEDs.

Polymer light-emitting diodes with thermal inkjet printed poly(3,4-ethylenedioxythiophene):polystyrenesulfonate as transparent anode

International Nuclear Information System (INIS)

Chou, W.-Y.; Lin, S.-T.; Cheng, H.-L.; Chang, M.-H.; Guo, H.-R.; Wen, T.-C.; Mai, Y.-S.; Horng, J.-B.; Kuo, C.-W.; Tang, F.-C.; Liao, C.-C.; Chiu, C.-L.

2007-01-01

Conjugated poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) films, prepared by inkjet-printing and spin-coating methods, have been studied using atomic force microscopy, micro-Raman spectroscopy, photoelectron spectroscopy, and four-point probe conductivity measurements. Electrical conductivity of the inkjet-printed film was enhanced by a factor of around 10 when compared to a spin-coating film. The improved conductivity was attributed to longer effective conjugation length of PEDOT chains in inkjet-printing PEDOT:PSS films as suggested by their micro-Raman spectroscopy. PEDOT:PSS films formed by the inkjet-printing method are appropriate for use as an anode for simplification of the fabrication process of polymer light-emitting diodes whose performance is about 1.2 cd/A

All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

Directory of Open Access Journals (Sweden)

Jiahui Li

2016-10-01

Full Text Available All-inorganic quantum dot light emitting diodes (QLEDs have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

Red carbon dots-based phosphors for white light-emitting diodes with color rendering index of 92.

Science.gov (United States)

Zhai, Yuechen; Wang, Yi; Li, Di; Zhou, Ding; Jing, Pengtao; Shen, Dezhen; Qu, Songnan

2018-05-29

Exploration of solid-state efficient red emissive carbon dots (CDs) phosphors is strongly desired for the development of high performance CDs-based white light-emitting diodes (WLEDs). In this work, enhanced red emissive CDs-based phosphors with photoluminescence quantum yields (PLQYs) of 25% were prepared by embedding red emissive CDs (PLQYs of 23%) into polyvinyl pyrrolidone (PVP). Because of the protection of PVP, the phosphors could preserve strong luminescence under long-term UV excitation or being mixed with conventional packaging materials. By applying the red emissive phosphors as the color conversion layer, WLEDs with high color rendering index of 92 and color coordinate of (0.33, 0.33) are fabricated. Copyright © 2018 Elsevier Inc. All rights reserved.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

Science.gov (United States)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

International Nuclear Information System (INIS)

Tian Hua; Qiu Kun; Song Jun; Wang Da-Jian; Liu Ji-Wen

2012-01-01

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400–700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic “remote-phosphor” color conversion

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Improvement of white organic light emitting diode performances by an annealing process

International Nuclear Information System (INIS)

Sepeai, Suhaila; Salleh, Muhamad Mat; Yahaya, Muhammad; Umar, Akrajas Ali

2009-01-01

White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.% rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m 2 , respectively. The annealing technique at relatively low temperature (50 o C, 100 o C, and 150 o C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 o C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m 2 were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

2010-11-01

The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

Science.gov (United States)

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

Science.gov (United States)

Lee, Byeong Ryong; Kim, Tae Geun

2016-06-01

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Light emitting diodes for today's energy conscious world

Energy Technology Data Exchange (ETDEWEB)

Papanier, J

2000-10-01

The role played by light emitting diodes in back lighting, decorative illumination, emergency lighting, and automated signage are described as indicators of the many benefits and advantages of LED technology. The basic principles underlying the functioning of LEDs are explained, including the reasons behind their high efficiency in applications requiring colour. The difference between wattage and lumens is clarified; wattage refers to power consumption, whereas lumens measure brightness or light output, the measure most significant in the case of LEDs.

Colour tuning in white hybrid inorganic/organic light-emitting diodes

International Nuclear Information System (INIS)

Bruckbauer, Jochen; Brasser, Catherine; Edwards, Paul R; Martin, Robert W; Findlay, Neil J; Skabara, Peter J; Wallis, David J

2016-01-01

White hybrid inorganic/organic light-emitting diodes (LEDs) were fabricated by combining a novel organic colour converter with a blue inorganic LED. An organic small molecule was specifically synthesised to act as down-converter. The characteristics of the white colour were controlled by changing the concentration of the organic molecule based on the BODIPY unit, which was embedded in a transparent matrix, and volume of the molecule and encapsulant mixture. The concentration has a critical effect on the conversion efficiency, i.e. how much of the absorbed blue light is converted into yellow light. With increasing concentration the conversion efficiency decreases. This quenching effect is due to aggregation of the organic molecule at higher concentrations. Increasing the deposited amount of the converter does not increase the yellow emission despite more blue light being absorbed. Degradation of the organic converter was also observed during a period of 15 months from LED fabrication. Angular-dependent measurements revealed slight deviation from a Lambertian profile for the blue and yellow emission peaks leading to a small change in ‘whiteness’ with emission angle. Warm white and cool white light with correlated colour temperatures of 2770 K and 7680 K, respectively, were achieved using different concentrations of the converter molecule. Although further work is needed to improve the lifetime and poor colour rendering, these hybrid LEDs show promising results as an alternative approach for generating white LEDs compared with phosphor-based white LEDs. (paper)

Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

International Nuclear Information System (INIS)

Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

2009-01-01

The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-01-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, Martijn; Nicolai, Herman T.; Lenes, Martijn; Wetzelaer, Gert-Jan A. H.; Lu, Mingtao; Blom, Paul W. M.

2011-01-01

The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Determination of the trap-assisted recombination strength in polymer light emitting diodes

NARCIS (Netherlands)

Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

2011-01-01

The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

Science.gov (United States)

Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

2014-01-27

Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

National Research Council Canada - National Science Library

Siskaninetz, William

2004-01-01

Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained...

Color Rendering Index Thermal Stability Improvement of Glass-Based Phosphor-Converted White Light-Emitting Diodes for Solid-State Lighting

Directory of Open Access Journals (Sweden)

Chun-Chin Tsai

2014-01-01

Full Text Available High color rendering index performance has been required for phosphor-converted warm-white light-emitting diodes (PC-WWLEDs in lighting industry. The characteristics of low-temperature fabricated phosphor (yellow: Ce3+:YAG, green: Tb3+:YAG, and red: CaAlClSiN3:Eu2+ doped glass were presented for applications to high color rendering index warm-white-light-emitting diodes. Color coordinates (x, y = (0.36, 0.29, quantum yield (QY = 55.6%, color rending index (CRI = 85.3, and correlated color temperature (CCT = 3923 K were characterized. Glass-based PC-WWLEDs was found able to maintain good thermal stability for long-time high-temperature operation. QY decay, CRI remenance, and chromaticity shift were also analyzed for glass- and silicone-based high-power PC-WLEDs by thermal aging at 150°C and 250°C for industrial test standard’s aging time 1008 hours. Better than the silicone’s, thermal stability of glass-based PC-WLEDs has been improved. The resulted high color rendering index (CRI glass phosphor potentially can be used as a phosphor layer for high-performance and low-cost PC-WLEDs used in next-generation indoor solid-state lighting applications.

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In 0.35Ga 0.65P light-emitting diodes grown by gas-source MBE

Science.gov (United States)

Masselink, W. Ted; Zachau, Martin

1993-02-01

This paper describes the growth and optical characteristics of In yGa 1- yP with 0.3Raman spectra of these undoped films and observe strong excitonic luminescence over the entire composition range investigated. The band gap derived from the luminescence excitation spectra corresponds to that of a fully relaxed InGaP film with no residual strain, which is confirmed by the Raman measurements. Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In 0.35Ga 0.65P. This alloy is close to that with the largest direct band gap in the In yGa 1- y P system and has lattice mismatch from the GaAs substrate of 1%.

Highly efficient and stable white organic light emitting diode base on double recombination zones of phosphorescent blue/orange emitters.

Science.gov (United States)

Lee, Seok Jae; Koo, Ja Ryong; Lim, Dong Hwan; Park, Hye Rim; Kim, Young Kwan; Ha, Yunkyoung

2011-08-01

We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection. As a result, light-emitting performances of white OLED with D-EMLs were improved and showed the steady CIE coordinates compared to that with S-EML of orange emitter, which demonstrated the maximum luminous efficiency and external quantum efficiency were 21.38 cd/A and 11.09%. It also showed the stable white emission with CIE(x,y) coordinates from (x = 0.36, y = 0.37) at 6 V to (x = 0.33, y = 0.38) at 12 V.

Acceptor thickness effect of exciplex and electroplex emission at heterojunction interface in organic light-emitting diodes

Science.gov (United States)

Zhang, Wei; Yu, Junsheng; Yuan, Kai; Jiang, Yadong; Zhang, Qing; Cao, Kangli

2010-10-01

Organic light-emitting diodes (OLEDs) consisted of a novel fluorene derivative of 5,6-bis(9,9-dihexyl-9H-fluoren-2-yl)- 2,3-diisocyano-2,3-dihydropyrazine (BDHFLCNPy) and a hole transporting material of N,N'-Di-[(1-naphthalenyl)- N,N'-diphenyl](1,1'-biphenyl)-4,4'-diamine (NPB) were fabricated, and electroluminescence (EL) spectrum of devices were investigated. It was found that light emission around 650 nm observed in devices came from exciplex generated at heterojunction interface by NPB molecules worked as electron donor and BDHFLCNPy molecules worked as electron acceptor. Moreover, a shoulder peak around 500 nm ascribed to BDHFLCNPy exciton was observed. To systemically study the effect of heterojunction structure in exciplex formation, OLEDs with different thickness of acceptor were fabricated. The results illustrated that a shoulder peak around 600 nm occurred in EL when acceptor thickness increases, and BDHFLCNPy exciton emitting strength is relatively altered. The emission band around 600 nm is due to electroplex. The L-V-J properties of OLEDs show that device with the thinnest acceptor layer has the highest luminance and current density. On the contrary, OLEDs with thicker acceptor layer have higher luminance efficiency. The different recombination mechanism of exciton, exciplex and electroplex in heterojunction were studied. Furthermore, the acceptor thickness effect of exciplex and electroplex generating mechanism and energy transferring mechanism between them was also discussed.

White-light-emitting diode based on a single-layer polymer

Science.gov (United States)

Wang, B. Z.; Zhang, X. P.; Liu, H. M.

2013-05-01

A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

Study of transport properties of copper/zinc-oxide-nanorods-based Schottky diode fabricated on textile fabric

International Nuclear Information System (INIS)

Khan, Azam; Hussain, Mushtaque; Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Nur, Omer; Willander, Magnus

2013-01-01

In this work, a copper/zinc-oxide (ZnO)-nanorods-based Schottky diode was fabricated on the textile fabric substrate. ZnO nanorods were grown on a silver-coated textile fabric substrate by using the hydrothermal route. Scanning electron microscopy and x-ray diffraction techniques were used for the structural study. The electrical characterization of copper/ZnO-nanorods-based Schottky diodes was investigated by using a semiconductor parameter analyzer and an impedance spectrometer. The current density–voltage (J–V) and capacitance–voltage (C–V) measurements were used to estimate the electrical parameters. The threshold voltage (V th ), ideality factor (η), barrier height (ϕ b ), reverse saturation current density (J s ), carrier concentration (N D ) and built-in potential (V bi ) were determined by using experimental data and (simulated) curve fitting. This study describes the possible fabrication of electronic and optoelectronic devices on textile fabric substrate with an acceptable performance. (paper)

Improvement of white organic light emitting diode performances by an annealing process

Energy Technology Data Exchange (ETDEWEB)

Sepeai, Suhaila, E-mail: suhaila_sepeai@yahoo.co [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 UKM Bangi Selangor (Malaysia); Salleh, Muhamad Mat, E-mail: mms@pkrisc.cc.ukm.m [Institute Of Microengineering And Nanoelectronic, Universiti Kebangsaan Malaysia, 43600 UKM Bangi Selangor (Malaysia); Yahaya, Muhammad; Umar, Akrajas Ali [Institute Of Microengineering And Nanoelectronic, Universiti Kebangsaan Malaysia, 43600 UKM Bangi Selangor (Malaysia)

2009-06-30

White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.% rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m{sup 2}, respectively. The annealing technique at relatively low temperature (50 {sup o}C, 100 {sup o}C, and 150 {sup o}C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 {sup o}C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m{sup 2} were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.

Effect of mixed hole transporting host on the mobility, Gaussian density of states and efficiencies of a heterojunction phosphorescent organic light emitting diode

International Nuclear Information System (INIS)

Talik, N A; Woon, K L; Yap, B K

2016-01-01

We present an in-depth study of the hole transport in poly(vinylcarbazole) PVK films blended with small molecule tris(4-carbazoyl-9-ylphenyl)amine (TcTa). Doping TcTa in PVK introduces shallow hole traps when the doping concentration is lower than 20 wt%. It becomes percolative at higher concentrations. The energetic disorder σ of the blended system reduces from ∼72 meV at 0 wt% TcTa to ∼41 meV at 50 wt% TcTa. A correlation between σ and the film morphologies suggests that the blending of TcTa molecules in the film does not only change the film homogeneity and roughness but also the energetic disorder. In addition to the mobility study, we fabricated a red phosphorescent organic light emitting diode with the same blending system. By doping merely 5 wt% of TcTa into PVK as mixed hole-transporting hosts, the efficiency of the deep red heterojunction phosphorescent organic light emitting diode increased from 2 cd A −1 to 4 cd A −1 , suggesting that TcTa molecules assist in hole injection. (paper)

Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

International Nuclear Information System (INIS)

Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

2015-01-01

It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

Red emitting phosphors of Eu3+ doped Na2Ln2Ti3O10 (Ln = Gd, Y) for white light emitting diodes

International Nuclear Information System (INIS)

Zhang, Niumiao; Guo, Chongfeng; Yin, Luqiao; Zhang, Jianhua; Wu, Mingmei

2015-01-01

Highlights: • Layered red phosphors Na 2 Ln 2 Ti 3 O 10 (Ln = Gd, Y):Eu 3+ were prepared. • The synthesis parameters of phosphors were optimized. • PL and thermal stability of the samples were investigated. • LED devices were also fabricated including the present red phosphor. - Abstract: A series of Eu 3+ doped Na 2 Ln 2 Ti 3 O 10 (Ln = Gd, Y) red-emitting phosphors for application in ultraviolet based light emitting diodes (LEDs) were successfully synthesized by a modified sol–gel method. Their structure and luminescent properties were characterized by powder X-ray diffraction (XRD), photoluminescence excitation (PLE) and emission (PL) spectra and absorption spectra, according to these results the optimal compositions and synthesis parameters were determined. In addition, the thermal stabilities of the phosphors were investigated according to the temperature-dependent PL spectra. The red and white-LEDs (W-LEDs) comprising the Na 2 Ln 2 Ti 3 O 10 :Eu 3+ (Ln = Gd, Y) red emitting phosphors were fabricated with a near-ultraviolet (n-UV) chip. In comparison with Na 2 Y 1.4 Eu 0.6 Ti 3 O 10 , the Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 phosphor offers higher brightness, quantum efficiency, and excellent thermal stability. W-LEDs comprising Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 showed bright white emission with a color rendering index (Ra) of 82, a color temperature of 2151 K, and Commission Internationale de I’Eclairage (CIE) color coordinates of (0.34, 0.37). The phosphor Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 is more suitable candidate for application in LEDs

Fabrication of organic light emitting diode using Molybdenum ...

Indian Academy of Sciences (India)

65

efficiency is found to be increased compared to the single layer anode OLED. To study the ... their co-workers fabricated OLEDs on bilayer graphene electrode [5]. Daeil Kim ... On the other hand Fluorine doped Tin Oxide (FTO) though being.

Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

Science.gov (United States)

Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

2014-06-11

Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

Study of photophysical processes in organic light-emitting diodes based on light-emission profile reconstruction

NARCIS (Netherlands)

Carvelli, M.

2012-01-01

Organic light-emitting diodes (OLEDs) are emerging as a promising option for energy-efficient, flexible light sources. A key factor that needs to be measured and controlled is the shape of the emission profile, i.e. the spatial distribution of the emitting excitons across the active layer thickness.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Science.gov (United States)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz)2

Science.gov (United States)

Tomova, R. L.; Petrova, P. K.; Stoycheva-Topalova, R. T.

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz)2) in configuration: ITO/PVK:TPD/ Zn(BTz)2 (x nm)/ Rubrene (1 nm)/ Zn(BTz)2 (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz)2 (x→ 0-15 nm) and to Zn(BTz)2/Al (x→ 70-75 nm) interfaces and shift toward emission of Zn(BTz)2 increasing the distance of Rubrene from both interfaces (x→35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

Systematic investigation of the effects of organic film structure on light emitting diode performance

Science.gov (United States)

Joswick, M. D.; Campbell, I. H.; Barashkov, N. N.; Ferraris, J. P.

1996-09-01

We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current-voltage, capacitance-voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current-voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs.

Color optimization of conjugated-polymer/InGaN hybrid white light emitting diodes by incomplete energy transfer

International Nuclear Information System (INIS)

Chang, Chi-Jung; Lai, Chun-Feng; Madhusudhana Reddy, P.; Chen, Yung-Lin; Chiou, Wei-Yung; Chang, Shinn-Jen

2015-01-01

By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. WLEDs with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs. - Highlights: • Highly efficient white light-emitting diodes (WLEDs) were produced. • Conjugated-polymer/InGaN hybrid WLEDs by incomplete energy transfer mechanism. • WLEDs with high color-rendering index and tunable correlated color temperature. • Polysiloxane encapsulant with superior optical, mechanical and thermal properties

Topology optimisation of passive coolers for light-emitting diode lamps

DEFF Research Database (Denmark)

Alexandersen, Joe

2015-01-01

This work applies topology optimisation to the design of passive coolers for light-emitting diode (LED) lamps. The heat sinks are cooled by the natural convection currents arising from the temperature difference between the LED lamp and the surrounding air. A large scale parallel computational....... The optimisation results show interesting features that are currently being incorporated into industrial designs for enhanced passive cooling abilities....

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

Low-driving-voltage and colour-stable white organic light-emitting diodes with a cross-patterned multi-emissive layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, O Ok; Park, Jae Kyun; Chin, Byung Doo

2012-01-01

We have applied a simple cross-patterning technique for the fabrication of phosphorescent white organic light-emitting diodes (WOLEDs) with red, green and blue (RGB) emitters; the resulting device has relatively low driving voltage and high colour stability. The selectively cross-patterned multicolour emitting layer (EML) was easily prepared using a metal mask without an alignment process. Not only was the characteristic of low driving voltage obtained but also of improved colour stability, which can be ascribed to the simplified stack of the EML and the corresponding suppression of the biased shift in the recombination zone. The spatial distribution and variation of the stacked EML structure could explain the origin of the robust white emission. Compared with the conventional WOLED with a RGB simple stack, the cross-patterned multi-EML device showed a slight change in colour coordinates in the luminance range 100-8000 cd m -2 , with a decrease in the driving voltage of 0.5-2.0 V, while the luminous efficiency was maintained. (paper)

Effect of interface voids on electroluminescence colors for ZnO microdisk/p-GaN heterojunction light-emitting diodes

Science.gov (United States)

Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon

2017-10-01

This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.

Efficient bright white organic light-emitting diode based on non-doped ultrathin 5,6,11,12-tetraphenylnaphthacene layer

International Nuclear Information System (INIS)

Li Lu; Yu Junsheng; Tang Xiaoqing; Wang Tao; Li Wei; Jiang Yadong

2008-01-01

High-performance undoped white organic light-emitting diode (OLED) has been fabricated using an ultrathin yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (rubrene) inserted at two sides of interface between two N,N'-bis-(1-naphthyl)-N,N'- biphenyl-1,1'-biphenyl-4,4'- diamine (NPB) layers as a hole transporting and blue emissive layer, respectively. The results showed that a maximum luminance of the device reached to as high as 21,500 cd/m 2 at 15 V. The power efficiencies of 2.5 and 1.6 lm/W at a luminance of 1000 and 10000 cd/m 2 , respectively, were obtained. The peaks of electroluminescent (EL) spectra locate at 429 and 560 nm corresponding to the Commissions Internationale De L'Eclairage (CIE) coordinates of (0.32, 0.33), which is independent of bias voltage. The performance enhancement of the device may result from direct charge carrier trapping in rubrene. Energy transfer mechanism was also found in the EL process

Study and fabrication of tunnel diodes made on germanium using a collective planar technique

International Nuclear Information System (INIS)

Vrahides, Michel

1973-01-01

The main results of the theory on tunnel diodes are presented in the first chapter. From these results are deduced the technological requirements that any fabrication process should meet to make tunnel diodes. These requirements show up that, among the three techniques for junction making (thermal diffusion of impurities, epitaxy, alloying), the last one is presently the best fitted to the fabrication of tunnel junctions. By analyzing the defects created by various alloying technologies presently used, together with a study of the benefits due to a use of chemical photolithography, evaporation under vacuum and masking by deposited oxide, it is possible to design a tentative scheme of a 0.5 ns tunnel diode. Then, in a second chapter, is presented the collective process for fabrication that has been used on monocrystalline, P-type, germanium wafers. 8 000 tunnel diodes may be positioned on a 1.5 inch diameter wafer by using that process. A description of the various apparatus used is also given. The experimental results are described in the third chapter. The influence of the various fabrication parameters on the electrical characteristics of the diodes are discussed. It is shown, by studying the fabrication yields and parameter spreading, that 80 per cent of the diodes exhibit a standard tunnel diode behaviour and that 90 per cent of these present a peak current dispersion less than ± 25 per cent. When measuring at the peak current drifts under temperature stresses, a good analogy with conventional tunnel diode is found. Some measurements of switching times have led to values as low as 0.6 nanoseconds. (author) [fr

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

Science.gov (United States)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

Science.gov (United States)

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-02-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m-2 that can already satisfy the requirements for lighting sources and displays.

Lightening performance investigation of conformal coating in light emitting diode packaging fabricated using a piezoelectric ultrasonic vibrator

International Nuclear Information System (INIS)

Han, Young-Min; Son, Byeong-Ho; Hong, Seung-Min; Choi, Seung-Bok

2011-01-01

This study presents a new ultrasonic vibrator which can be applicable to high viscosity conformal coating in the light emitting diode (LED) packaging process. In order to achieve this goal, an ultrasonic vibrator is devised utilizing piezoelectric actuators so as to have a longitudinal motion. After analyzing the standing wave of the proposed ultrasonic vibrator, the design parameters of the concentrator horn are optimally determined to maximize the tip displacement amplitude of the ultrasonic vibrator. The size and flow of droplets sprayed from the proposed ultrasonic vibrator are evaluated by a fluid dynamics analysis. In order to evaluate the effectiveness of the proposed ultrasonic vibrator, the designed vibrator is manufactured and applied to conformal coating of an LED. The manufactured LED is then evaluated by the lighting uniformity and the correlated color temperature (CCT). (technical note)

Improvement in Device Performance and Reliability of Organic Light-Emitting Diodes through Deposition Rate Control

Directory of Open Access Journals (Sweden)

Shun-Wei Liu

2014-01-01

Full Text Available We demonstrated a fabrication technique to reduce the driving voltage, increase the current efficiency, and extend the operating lifetime of an organic light-emitting diode (OLED by simply controlling the deposition rate of bis(10-hydroxybenzo[h]qinolinato beryllium (Bebq2 used as the emitting layer and the electron-transport layer. In our optimized device, 55 nm of Bebq2 was first deposited at a faster deposition rate of 1.3 nm/s, followed by the deposition of a thin Bebq2 (5 nm layer at a slower rate of 0.03 nm/s. The Bebq2 layer with the faster deposition rate exhibited higher photoluminescence efficiency and was suitable for use in light emission. The thin Bebq2 layer with the slower deposition rate was used to modify the interface between the Bebq2 and cathode and hence improve the injection efficiency and lower the driving voltage. The operating lifetime of such a two-step deposition OLED was 1.92 and 4.6 times longer than that of devices with a single deposition rate, that is, 1.3 and 0.03 nm/s cases, respectively.

Shorter Exciton Lifetimes via an External Heavy-Atom Effect: Alleviating the Effects of Bimolecular Processes in Organic Light-Emitting Diodes.

Science.gov (United States)

Einzinger, Markus; Zhu, Tianyu; de Silva, Piotr; Belger, Christian; Swager, Timothy M; Van Voorhis, Troy; Baldo, Marc A

2017-10-01

Multiexcited-state phenomena are believed to be the root cause of two exigent challenges in organic light-emitting diodes; namely, efficiency roll-off and degradation. The development of novel strategies to reduce exciton densities under heavy load is therefore highly desirable. Here, it is shown that triplet exciton lifetimes of thermally activated delayed-fluorescence-emitter molecules can be manipulated in the solid state by exploiting intermolecular interactions. The external heavy-atom effect of brominated host molecules leads to increased spin-orbit coupling, which in turn enhances intersystem crossing rates in the guest molecule. Wave function overlap between the host and the guest is confirmed by combined molecular dynamics and density functional theory calculations. Shorter triplet exciton lifetimes are observed, while high photoluminescence quantum yields and essentially unaltered emission spectra are maintained. A change in the intersystem crossing rate ratio due to increased dielectric constants leads to almost 50% lower triplet exciton densities in the emissive layer in the steady state and results in an improved onset of the photoluminescence quantum yield roll-off at high excitation densities. Efficient organic light-emitting diodes with better roll-off behavior based on these novel hosts are fabricated, demonstrating the suitability of this concept for real-world applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution processed organic light-emitting diodes using the plasma cross-linking technology

Energy Technology Data Exchange (ETDEWEB)

He, Kongduo [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liu, Yang [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

2016-09-30

Highlights: • Mixed acetylene and Ar plasma treatment makes the organic film surface cross-linked. • The plasma treatment for 30 s does not affect the performance of OLEDs. • Cross-linking surface can resist rinsing and corrosion of organic solvent. • The surface morphology is nearly unchanged after plasma treatment. • The plasma cross-linking method can realize solution processed multilayer OLEDs. - Abstract: Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

International Nuclear Information System (INIS)

Zheng Hao; Mei, Z.X.; Zeng, Z.Q.; Liu, Y.Z.; Guo, L.W.; Jia, J.F.; Xue, Q.K.; Zhang, Z.; Du, X.L.

2011-01-01

High quality single crystalline n-type ZnO film was grown on p-type GaN substrate using molecular beam epitaxy. Transmission electron microscopy reveals a sharp ZnO/GaN interface. Light-emitting diode was fabricated from this heterostructure, and a turn-on voltage of ∼ 3.4 V was demonstrated. We found that the emission peak shifts from violet (430 nm) to near-ultraviolet (375 nm) when the driving current increases from 0.38 mA to 3.08 mA. This intriguing phenomenon can be understood by charged carrier's radical recombination occurring at both sides of the device, and the current enhancement of ZnO emission efficiency.

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

Science.gov (United States)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

KAUST Repository

Guo, Wei; Banerjee, Animesh; Bhattacharya, Pallab K.; Ooi, Boon S.

2011-01-01

High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.

Continuous light-emitting Diode (LED) lighting for improving food quality

OpenAIRE

Lu, C; Bian, Z

2016-01-01

Lighting-emitting diodes (LEDs) have shown great potential for plant growth and development, with higher luminous efficiency and positive impact compared with other artificial lighting. The combined effects of red/blue or/and green, and white LED light on plant growth and physiology, including chlorophyll fluorescence, nitrate content and phytochemical concentration before harvest, were investigated. The results showed that continuous light (CL)\\ud exposure at pre-harvest can effectively redu...

Design of efficient molecular organic light-emitting diodes by a high-throughput virtual screening and experimental approach

Science.gov (United States)

Gómez-Bombarelli, Rafael; Aguilera-Iparraguirre, Jorge; Hirzel, Timothy D.; Duvenaud, David; MacLaurin, Dougal; Blood-Forsythe, Martin A.; Chae, Hyun Sik; Einzinger, Markus; Ha, Dong-Gwang; Wu, Tony; Markopoulos, Georgios; Jeon, Soonok; Kang, Hosuk; Miyazaki, Hiroshi; Numata, Masaki; Kim, Sunghan; Huang, Wenliang; Hong, Seong Ik; Baldo, Marc; Adams, Ryan P.; Aspuru-Guzik, Alán

2016-10-01

Virtual screening is becoming a ground-breaking tool for molecular discovery due to the exponential growth of available computer time and constant improvement of simulation and machine learning techniques. We report an integrated organic functional material design process that incorporates theoretical insight, quantum chemistry, cheminformatics, machine learning, industrial expertise, organic synthesis, molecular characterization, device fabrication and optoelectronic testing. After exploring a search space of 1.6 million molecules and screening over 400,000 of them using time-dependent density functional theory, we identified thousands of promising novel organic light-emitting diode molecules across the visible spectrum. Our team collaboratively selected the best candidates from this set. The experimentally determined external quantum efficiencies for these synthesized candidates were as large as 22%.

A highly luminescent dinuclear Eu(III) complex based on 4,4'-bis (4'',4'',4''-trifluoro-1'',3''-dioxobutyl)-o-terphenyl for light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Liu Shenggui [State Key Laboratory of Optoelectronic Materials and Technologies, Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China); School of Chemistry Science and Technology, Zhanjiang Normal University, New Materials Engineering and Technology Development Center of University in Guangdong, Zhanjiang 524048 (China); He Pei; Wang Huihui; Shi Jianxin [State Key Laboratory of Optoelectronic Materials and Technologies, Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Gong Menglian, E-mail: cesgml@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2009-08-15

A dinuclear Eu(III) complex Eu{sub 2}(btbt){sub 3}.4H{sub 2}O.CH{sub 3}CH{sub 2}OH.N(CH{sub 2}CH{sub 3}){sub 3} was synthesized, where H{sub 2}(btbt) was 4,4'-bis (4'',4'',4'',-trifluoro-1'',3''-dioxobutyl)-o-terphenyl. The composition and structure of the complex were characterized by elemental analysis, IR, UV-vis and FAB-MS spectroscopy. The complex emits the characteristic red luminescence of Eu{sup 3+} ion due to the {sup 5}D{sub 0} {yields} {sup 7}F{sub J} (J = 0-4) transitions under {approx}395 nm-light excitation with good luminescent quantum efficiency (32%) and exhibits high thermal stability (337 deg. C). Bright red light-emitting diodes (LEDs) were fabricated by coating the complex onto a {approx}395 nm-emitting InGaN chip. When the mass ratio of the red phosphor to the silicone is 1:30, the efficiency of the fabricated LEDs with the europium complex is 0.98 lm w{sup -1}. The CIE chromaticity coordinates of the LEDs are x = 0.6057 and y = 0.3137, which are close to the National Television Standard Committee (NTSC) standard values for red color. The results indicate that the complex may act as a red component in the fabrication of near UV InGaN-based white light-emitting diodes with high color-rendering index.

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Tomova, R L; Petrova, P K; Stoycheva-Topalova, R T, E-mail: reni@clf.bas.b [Institute of optical materials and technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, ' Acad. G. Bonchev' str. bl. 109, 1113 Sofia (Bulgaria)

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz){sub 2}) in configuration: ITO/PVK:TPD/ Zn(BTz){sub 2} (x nm)/ Rubrene (1 nm)/ Zn(BTz){sub 2} (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz){sub 2} (x{yields} 0-15 nm) and to Zn(BTz){sub 2}/Al (x{yields} 70-75 nm) interfaces and shift toward emission of Zn(BTz){sub 2} increasing the distance of Rubrene from both interfaces (x{yields}35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

Cost-effective large-scale fabrication of diffractive optical elements by using conventional semiconducting processes.

Science.gov (United States)

Yoo, Seunghwan; Song, Ho Young; Lee, Junghoon; Jang, Cheol-Yong; Jeong, Hakgeun

2012-11-20

In this article, we introduce a simple fabrication method for SiO(2)-based thin diffractive optical elements (DOEs) that uses the conventional processes widely used in the semiconductor industry. Photolithography and an inductively coupled plasma etching technique are easy and cost-effective methods for fabricating subnanometer-scale and thin DOEs with a refractive index of 1.45, based on SiO(2). After fabricating DOEs, we confirmed the shape of the output light emitted from the laser diode light source and applied to a light-emitting diode (LED) module. The results represent a new approach to mass-produce DOEs and realize a high-brightness LED module.

Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

2014-07-07

We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

NARCIS (Netherlands)

Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

2017-01-01

The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power

Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

Energy Technology Data Exchange (ETDEWEB)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

2014-04-28

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes.

Science.gov (United States)

Xuan, Tongtong; Yang, Xianfeng; Lou, Sunqi; Huang, Junjian; Liu, Yong; Yu, Jinbo; Li, Huili; Wong, Ka-Leung; Wang, Chengxin; Wang, Jing

2017-10-19

Inorganic halide perovskite quantum dots (QDs) suffer from problems related to poor water stability and poor thermal stability. Here we developed a simple strategy to synthesize alkyl phosphate (TDPA) coated CsPbBr 3 QDs by using 1-tetradecylphosphonic acid both as the ligand for the CsPbBr 3 QDs and as the precursor for the formation of alkyl phosphate. These QDs not only retain a high photoluminescence quantum yield (PLQY, 68%) and narrow band emission (FHWM ∼ 22 nm) but also exhibit high stability against water and heat. The relative PL intensity of the QDs was maintained at 75% or 59% after being dispersed in water for 5 h or heated to 375 K (100 °C), respectively. Finally, white light-emitting diodes (WLEDs) with a high luminous efficiency of 63 lm W -1 and a wide color gamut (122% of NTSC) were fabricated by using green-emitting CsPbBr 3 /TDPA QDs and red-emitting K 2 SiF 6 :Mn 4+ phosphors as color converters. The luminous efficiency of the WLEDs remained at 90% after working under a relative humidity (RH) of 60% for 15 h, thereby showing promise for use as backlight devices in LCDs.

Green perovskite light emitting diodes based on the ITO/Al2O3/CsPbBr3 heterojunction structure

Science.gov (United States)

Zhuang, Shiwei; Ma, Xue; Hu, Daqiang; Dong, Xin; Zhang, Yuantao; Zhang, Baolin

2018-03-01

Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (∼28.9 nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of ∼6 V. The EL emission band is narrow with the FWHM of ∼25 nm. The peak EQE of the device was ∼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

2016-01-01

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

KAUST Repository

Pan, Jun

2016-08-16

A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

Light emission mechanism of mixed host organic light-emitting diodes

Science.gov (United States)

Song, Wook; Lee, Jun Yeob

2015-03-01

Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

Science.gov (United States)

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effect of a charge control layer on the electroluminescent characteristic of blue and white organic light-emitting diodes.

Science.gov (United States)

Lee, Dong Hyung; Lee, Seok Jae; Koo, Ja-Ryong; Lee, Ho Won; Shin, Hyun Su; Lee, Song Eun; Kim, Woo Young; Lee, Kum Hee; Yoon, Seung Soo; Kim, Young Kwan

2014-08-01

We investigated blue fluorescent organic light-emitting diode (OLED) with a charge control layer (CCL) to produce high efficiency and improve the half-decay lifetime. Three types of devices (device A, B, and C) were fabricated following the number of CCLs within the emitting layer (EML), maintaining the thickness of whole EML. The CCL and host material, 2-methyl-9,10-di(2-naphthyl)anthracene, which has a bipolar property, was able to control the carrier movement with ease inside the EML. Device B demonstrated a maximum luminous efficiency (LE) and external quantum efficiency (EQE) of 9.19 cd/A and 5.78%, respectively. It also showed that the enhancement of the half-decay lifetime, measured at an initial luminance of 1,000 cd/m2, was 1.5 times longer than that of the conventional structure. A hybrid white OLED (WOLED) was also fabricated using a phosphorescent red emitter, bis(2-phenylquinoline)-acetylacetonate iridium III doped in 4,4'-N,N'-dicarbazolyl-biphenyl. The property of the hybrid WOLED with CCL showed a maximum LE and an EQE of 13.46 cd/A and 8.32%, respectively. It also showed white emission with Commission International de L'Éclairage coordinates of (x = 0.41, y = 0.33) at 10 V.

A Solution Processed Flexible Nanocomposite Electrode with Efficient Light Extraction for Organic Light Emitting Diodes

Science.gov (United States)

Li, Lu; Liang, Jiajie; Chou, Shu-Yu; Zhu, Xiaodan; Niu, Xiaofan; Zhibinyu; Pei, Qibing

2014-03-01

Highly efficient organic light emitting diodes (OLEDs) based on multiple layers of vapor evaporated small molecules, indium tin oxide transparent electrode, and glass substrate have been extensively investigated and are being commercialized. The light extraction from the exciton radiative decay is limited to less than 30% due to plasmonic quenching on the metallic cathode and the waveguide in the multi-layer sandwich structure. Here we report a flexible nanocomposite electrode comprising single-walled carbon nanotubes and silver nanowires stacked and embedded in the surface of a polymer substrate. Nanoparticles of barium strontium titanate are dispersed within the substrate to enhance light extraction efficiency. Green polymer OLED (PLEDs) fabricated on the nanocomposite electrode exhibit a maximum current efficiency of 118 cd/A at 10,000 cd/m2 with the calculated external quantum efficiency being 38.9%. The efficiencies of white PLEDs are 46.7 cd/A and 30.5%, respectively. The devices can be bent to 3 mm radius repeatedly without significant loss of electroluminescent performance. The nanocomposite electrode could pave the way to high-efficiency flexible OLEDs with simplified device structure and low fabrication cost.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr-Hau

2015-01-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern

Photo-Crosslinking of Pendent Uracil Units Provides Supramolecular Hole Injection/Transport Conducting Polymers for Highly Efficient Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Hsi-Kang Shih

2015-04-01

Full Text Available A new process for modifying a polymeric material for use as a hole injection transport layer in organic light-emitting diodes has been studied, which is through 2π + 2π photodimerization of a DNA-mimetic π-conjugated poly(triphenylamine-carbazole presenting pendent uracil groups (PTC-U under 1 h of UV irradiation. Multilayer florescence OLED (Organic light-emitting diodes device with the PTC-U-1hr as a hole injection/transport layer (ITO (Indium tin oxide/HITL (hole-injection/transport layer (15 nm/N,N'-di(1-naphthyl- N,N'-diphenyl-(1,1'-biphenyl-4,4'-diamine (NPB (15 nm/Tris-(8-hydroxyquinoline aluminum (Alq3 (60 nm/LiF (1 nm/Al (100 nm is fabricated, a remarkable improvement in performance (Qmax (external quantum efficiency = 2.65%, Bmax (maximum brightness = 56,704 cd/m2, and LE (luminance efficiencymax = 8.9 cd/A relative to the control PTC-U (Qmax = 2.40%, Bmax = 40,490 cd/m2, and LEmax = 8.0 cd/A. Multilayer phosphorescence OLED device with the PTC-U-1hr as a hole injection/transport layer (ITO/HITL (15 nm/Ir(ppy3:PVK (40 nm/BCP (10nm/Alq3 (40 nm/LiF (1 nm/Al (100 nm is fabricated by successive spin-coating processes, a remarkable improvement in performance (Qmax = 9.68%, Bmax = 41,466 cd/m2, and LEmax = 36.6 cd/A relative to the control PTC-U (Qmax = 8.35%, Bmax = 34,978 cd/m2, and LEmax = 30.8 cd/A and the commercial product (poly(3,4-ethylenedioxythiophene:polystyrenesulfonate PEDOT:PSS (Qmax = 4.29%, Bmax = 15,678 cd/m2, and LEmax = 16.2 cd/A has been achieved.

SimCP3—An Advanced Homologue of SimCP2 as a Solution-Processed Small Molecular Host Material for Blue Phosphorescence Organic Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Yi-Ting Lee

2016-09-01

Full Text Available We have overcome the synthetic difficulty of 9,9′,9′′,9′′′,9′′′′,9′′′′′-((phenylsilanetriyltris(benzene-5,3,1-triylhexakis(9H-carbazole (SimCP3 an advanced homologue of previously known SimCP2 as a solution-processed, high triplet gap energy host material for a blue phosphorescence dopant. A series of organic light-emitting diodes based on blue phosphorescence dopant iridium (III bis(4,6-difluorophenylpyridinatopicolate, FIrpic, were fabricated and tested to demonstrate the validity of solution-processed SimCP3 in the device fabrication.

Study of electrical fatigue by defect engineering in organic light-emitting diodes

International Nuclear Information System (INIS)

Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

2015-01-01

Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

A Phosphine-Free Route to Size-Adjustable CdSe and CdSe/CdS Core-Shell Quantum Dots for White-Light-Emitting Diodes.

Science.gov (United States)

Zhang, Yugang; Li, Guopeng; Zhang, Ting; Song, Zihang; Wang, Hui; Zhang, Zhongping; Jiang, Yang

2018-03-01

The selenium dioxide was used as the precursor to synthesize wide-size-ranged CdSe quantum dots (2.4-5.7 nm) via hot-injection route. The CdSe quantum dots are featured with high crystalline, monodisperse, zinc blende structure and wide emission region (530-635 nm). In order to improve the stability and quantum yield, a phosphine-free single-molecular precursor approach is used to obtain CdSe/CdS core/shell quantum dots. The CdSe/CdS quantum dots are highly fluorescent with quantum yield up to 65%, and persist the good monodispersity and high crystallinity. Moreover, the quantum dots white light-emitting-diodes are fabricated by using the resultant red emission core/shell quantum dots and Y3Al5O12:Ce3+ yellow phosphors as color-conversion layers on a blue InGaN chip. The prepared light-emitting-diodes show good performance with CIE-1931 coordinated of (0.3583, 0.3349), an Ra of 92.9, and a Tc of 4410 K at 20 mA, which indicate that the combination of red-emission QDs and yellow phophors as a promising approach to obtain warm WLEDs with good color rendering.

Systematic investigation of the effects of organic film structure on light emitting diode performance

Energy Technology Data Exchange (ETDEWEB)

Joswick, M.D.; Campbell, I.H. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75080 (United States)

1996-09-01

We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current{endash}voltage, capacitance{endash}voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current{endash}voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs. {copyright} {ital 1996 American Institute of Physics.}

Ultraviolet light-emitting diodes in water disinfection.

Science.gov (United States)

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial

High efficient white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

2007-07-01

Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

Directory of Open Access Journals (Sweden)

Wenyan Liu

2015-01-01

Full Text Available The quantum dot-based light-emitting diodes (QD-LEDs were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM, and power efficiency (PE. The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.

Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

Directory of Open Access Journals (Sweden)

Sang Hyun Jung

2013-01-01

Full Text Available Various nanopatterns on the transparent conducting indium tin oxide (ITO layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs. Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.

A comparative study of the electrodeposition and the aqueous chemical growth techniques for the utilization of ZnO nanorods on p-GaN for white light emitting diodes

Science.gov (United States)

Kishwar, S.; ul Hasan, K.; Alvi, N. H.; Klason, P.; Nur, O.; Willander, M.

2011-01-01

Vertically well aligned zinc oxide nanorods (ZnO NRs) were grown on p-GaN by electrodeposition (ED) and aqueous chemical growth (ACG) techniques and the structures were employed to fabricate white light emitting diodes (LEDs). Room temperature current voltage ( I-V), photoluminescence (PL), and electroluminescence (EL) measurements were performed to investigate and compare both LEDs. In general, the I-V characteristics and the PL spectra of both LEDs were rather similar. Nevertheless, the EL of the ED samples showed an extra emission peak shoulder at 730 nm. Moreover, at the same injection current, the EL spectrum of the ED light emitting diode showed a small UV shift of 12 nm and its white peak was found to be broader when compared to the ACG grown LED. The broadening of the EL spectrum of the LED grown by ED is due to the introduction of more radiative deep level defects. The presented LEDs have shown excellent color rendering indexes reaching a value as high as 95. These results indicate that the ZnO nanorods grown by both techniques possess very interesting electrical and optical properties but the ED is found to be faster and more suitable for the fabrication of white LEDs.

Hybrid metal grid-polymer-carbon nanotube electrodes for high luminance organic light emitting diodes

International Nuclear Information System (INIS)

Sam, F Laurent M; Dabera, G Dinesha M R; Lai, Khue T; Mills, Christopher A; Rozanski, Lynn J; Silva, S Ravi P

2014-01-01

Organic light emitting diodes (OLEDs) incorporating grid transparent conducting electrodes (TCEs) with wide grid line spacing suffer from an inability to transfer charge carriers across the gaps in the grids to promote light emission in these areas. High luminance OLEDs fabricated using a hybrid TCE composed of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS PH1000) or regioregular poly(3-hexylthiophene)-wrapped semiconducting single-walled carbon nanotubes (rrP3HT-SWCNT) in combination with a nanometre thin gold grid are reported here. OLEDs fabricated using the hybrid gold grid/PH1000 TCE have a luminance of 18 000 cd m −2 at 9 V; the same as the reference indium tin oxide (ITO) OLED. The gold grid/rrP3HT-SWCNT OLEDs have a lower luminance of 8260 cd m −2 at 9 V, which is likely due to a rougher rrP3HT-SWCNT surface. These results demonstrate that the hybrid gold grid/PH1000 TCE is a promising replacement for ITO in future plastic electronics applications including OLEDs and organic photovoltaics. For applications where surface roughness is not critical, e.g. electrochromic devices or discharge of static electricity, the gold grid/rrP3HT-SWCNT hybrid TCE can be employed. (paper)

Light emitting diodes (LED): applications in forest and native plant nurseries

Science.gov (United States)

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

A triphenylamine substituted quinacridone derivative for solution processed organic light emitting diodes

NARCIS (Netherlands)

Pilz da Cunha, M.; Do, T.T.; Yambem, S.D.; Pham, H.D.; Chang, S.; Manzhos, S.; Katoh, R.; Sonar, P.

2018-01-01

We report on a novel quinacridone derivative design, namely, 2,9-bis(4-(bis(4-methoxyphenyl)amino)phenyl)-5,12-bis(2-ethylhexyl)-5,12-dihydroquinolino[2,3-b]acridine-7,14-dione (TPA-QA-TPA) for possible use as a solution processable emissive layer in organic light emitting diodes (OLEDs). TPA-QA-TPA

High tunability and superluminescence in InAs mid-infrared light emitting diodes

International Nuclear Information System (INIS)

Sherstnev, V.V.; Krier, A.; Hill, G.

2002-01-01

We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

International Nuclear Information System (INIS)

Yong, Thian Khok; Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong; Yap, Seong Shan

2010-01-01

The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO 3 :HCl:H 2 O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq 3 )/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Yong, Thian Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yap, Seong Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Department of Physics, Trondheim (Norway)

2010-12-15

The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO{sub 3}:HCl:H{sub 2}O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq{sub 3})/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

Science.gov (United States)

Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

2017-11-01

All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

Phosphorescence white organic light-emitting diodes with single emitting layer based on isoquinolinefluorene-carbazole containing host.

Science.gov (United States)

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Shin, Hyun Su; Lee, Kum Hee; Yoon, Seung Soo; Kim, Woo Young; Kim, Young Kwan

2013-03-01

We have demonstrated a stable phosphorescent white organic light-emitting diodes (WOLEDs) using an orange emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N) iridium(III)acetylacetonate [(Bz4Fppy)2Ir(III)acac] doped into a newly synthesized blue host material, 2-(carbazol-9-yl)-7-(isoquinolin-1-yl)-9,9-diethylfluorene (CzFliq). When 1 wt.% (Bz4Fppy)2Ir(III)acac was doped into emitting layer, it was realized an improved EL performance and a pure white color in the OLED. The optimum WOLED showed maximum values as a luminous efficiency of 10.14 cd/A, a power efficiency of 10.24 Im/W, a peak external quantum efficiency 4.07%, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39) at 8 V.

Light-emitting diodes - Their potential in biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

2010-10-15

The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

Colour-tunable light-emitting diodes based on InP/GaP nanostructures

International Nuclear Information System (INIS)

Hatami, Fariba; Masselink, W Ted; Harris, James S

2006-01-01

We describe a novel colour-tunable light-emitting diode whose operation is based on direct band-gap emission from coupled configurations of InP quantum dots and quantum wells embedded in GaP. The control of the emission colour stems from a marked difference in the current dependence of intensities of two different emission processes. At lower currents, the emission is dominated by the 720 nm luminescence from the quantum dots and appears red; at higher currents, the emission is dominated by the 550 nm quantum-well luminescence and the perceived colour is green. Thus, we are able to tune the colour of such diodes from red to green by means of drive current. A multi-colour pixel can be realized by a single diode, with rapid switching between colour states to provide a range of colour mix

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Investigation of organic light emitting diodes for interferometric purposes

Science.gov (United States)

Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

2011-05-01

Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles

International Nuclear Information System (INIS)

Hong, Sang-Hyun; Kim, Jae-Joon; Jung, Yen-Sook; Kim, Dong-Yu; Park, Seong-Ju; Kang, Jang-Won; Yim, Sang-Youp

2015-01-01

We report on the characteristics of localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) fabricated by using colloidal silver (Ag) nanoparticles (NPs). Colloidal Ag NPs were deposited on the 20 nm thick p-GaN spacer layer using a spray process. The optical output power of NUV-LEDs with colloidal Ag NPs was increased by 48.7% at 20 mA compared with NUV-LEDs without colloidal Ag NPs. The enhancement was attributed to increased internal quantum efficiency caused by the resonance coupling between excitons in the multiple quantum wells and the LSPs in the Ag NPs. (paper)

Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

International Nuclear Information System (INIS)

Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

2016-01-01

We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

Best practices : bus signage for persons with visual impairments : light-emitting diode (LED) signs

Science.gov (United States)

2004-01-01

This best-practices report provides key information regarding the use of Light-Emitting Diode (LED) sign technologies to present destination and route information on transit vehicles. It will assist managers and engineers in the acquisition and use o...

Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow...

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

Science.gov (United States)

Miao, Yan-Qin; Gao, Zhi-Xiang; Zhang, Ai-Qin; Li, Yuan-Hao; Wang, Hua; Jia, Hu-Sheng; Liu, Xu-Guang; Tsuboi, Taijuf

2015-05-01

Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4’-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi (2,2’,2”-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0927), the International Science & Technology Cooperation Program of China (Grant No. 2012DFR50460), the National Natural Science Foundation of China (Grant Nos. 21101111 and 61274056), and the Shanxi Provincial Key Innovative Research Team in Science and Technology, China (Grant No. 2012041011).

Highly efficient white top-emitting organic light-emitting diodes with forward directed light emission

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Reineke, Sebastian; Furno, Mauro; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

2010-07-01

The demand for highly efficient and energy saving illumination has increased considerably during the last decades. Organic light emitting diodes (OLEDs) are promising candidates for future lighting technologies. They offer high efficiency along with excellent color quality, allowing substantially lower power consumption than traditional illuminants. Recently, especially top-emitting devices have attracted high interest due to their compatibility with opaque substrates like metal sheets. In this contribution, we demonstrate top-emitting OLEDs with white emission spectra employing a multilayer hybrid cavity structure with two highly efficient phosphorescent emitter materials for orange-red (Ir(MDQ)2(acac)) and green (Ir(ppy)3) emission as well as the stable fluorescent blue emitter TBPe. To improve the OLED performance and modify the color quality, two different electron blocking layers and anode material combinations are tested. Compared to Lambertian emission, our devices show considerably enhanced forward emission, which is preferred for most lighting applications. Besides broadband emission and angle independent emission maxima, power efficiencies of 13.3 lm/W at 3 V and external quantum efficiencies of 5.3% are achieved. The emission shows excellent CIE coordinates of (0.420,0.407) at approx. 1000 cd/m{sup 2} and color rendering indices up to 77.

Efficient bright white organic light-emitting diode based on non-doped ultrathin 5,6,11,12-tetraphenylnaphthacene layer

Energy Technology Data Exchange (ETDEWEB)

Li Lu [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu Junsheng [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn; Tang Xiaoqing; Wang Tao; Li Wei; Jiang Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2008-11-15

High-performance undoped white organic light-emitting diode (OLED) has been fabricated using an ultrathin yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (rubrene) inserted at two sides of interface between two N,N'-bis-(1-naphthyl)-N,N'- biphenyl-1,1'-biphenyl-4,4'- diamine (NPB) layers as a hole transporting and blue emissive layer, respectively. The results showed that a maximum luminance of the device reached to as high as 21,500 cd/m{sup 2} at 15 V. The power efficiencies of 2.5 and 1.6 lm/W at a luminance of 1000 and 10000 cd/m{sup 2}, respectively, were obtained. The peaks of electroluminescent (EL) spectra locate at 429 and 560 nm corresponding to the Commissions Internationale De L'Eclairage (CIE) coordinates of (0.32, 0.33), which is independent of bias voltage. The performance enhancement of the device may result from direct charge carrier trapping in rubrene. Energy transfer mechanism was also found in the EL process.

Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

Energy Technology Data Exchange (ETDEWEB)

Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

1999-06-01

Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

Study of compounds emitted during thermo-oxidative decomposition of polyester fabrics

Directory of Open Access Journals (Sweden)

Dzięcioł Małgorzata

2016-03-01

Full Text Available Compounds emitted during thermo-oxidative decomposition of three commercial polyester fabrics for indoor outfit and decorations (upholstery, curtains were studied. The experiments were carried out in a flow tubular furnace at 600°C in an air atmosphere. During decomposition process the complex mixtures of volatile and solid compounds were emitted. The main volatile products were carbon oxides, benzene, acetaldehyde, vinyl benzoate and acetophe-none. The emitted solid compounds consisted mainly of aromatic carboxylic acids and its derivatives, among which the greatest part took terephthalic acid, monovinyl terephthalate and benzoic acid. The small amounts of polycyclic aromatic hydrocarbons were also emitted. The emission profiles of the tested polyester fabrics were similar. The presence of toxic compounds indicates the possibility of serious hazard for people during fire.

Synthesis of unsymmetric bipyridine-Pt(II) -alkynyl complexes through post-click reaction with emission enhancement characteristics and their applications as phosphorescent organic light-emitting diodes.

Science.gov (United States)

Li, Yongguang; Tsang, Daniel Ping-Kuen; Chan, Carmen Ka-Man; Wong, Keith Man-Chung; Chan, Mei-Yee; Yam, Vivian Wing-Wah

2014-10-13

Two unsymmetric bipyridine-platinum(II)-alkynyl complexes have been synthesised by a post-click reaction. These metal complexes are found to exhibit emission enhancement properties. The photoluminescence quantum yield can be significantly increased from 0.03 in solution to 0.72 in solid-state thin films. Efficient solution-processable organic light-emitting diodes have been fabricated by utilizing these complexes as phosphorescent dopants. A high external quantum efficiency of up to 5.8% has been achieved. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

Energy Technology Data Exchange (ETDEWEB)

Arto V. Nurmikko; Jung Han

2007-03-31

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Fully Transparent Quantum Dot Light-Emitting Diode with a Laminated Top Graphene Anode.

Science.gov (United States)

Yao, Li; Fang, Xin; Gu, Wei; Zhai, Wenhao; Wan, Yi; Xie, Xixi; Xu, Wanjin; Pi, Xiaodong; Ran, Guangzhao; Qin, Guogang

2017-07-19

A new method to employ graphene as top electrode was introduced, and based on that, fully transparent quantum dot light-emitting diodes (T-QLEDs) were successfully fabricated through a lamination process. We adopted the widely used wet transfer method to transfer bilayer graphene (BG) on polydimethylsiloxane/polyethylene terephthalate (PDMS/PET) substrate. The sheet resistance of graphene reduced to ∼540 Ω/□ through transferring BG for 3 times on the PDMS/PET. The T-QLED has an inverted device structure of glass/indium tin oxide (ITO)/ZnO nanoparticles/(CdSSe/ZnS quantum dots (QDs))/1,1-bis[(di-4-tolylamino)phenyl] cyclohexane (TAPC)/MoO 3 /graphene/PDMS/PET. The graphene anode on PDMS/PET substrate can be directly laminated on the MoO 3 /TAPC/(CdSSe/ZnS QDs)/ZnO nanoparticles/ITO/glass, which relied on the van der Waals interaction between the graphene/PDMS and the MoO 3 . The transmittance of the T-QLED is 79.4% at its main electroluminescence peak wavelength of 622 nm.

Efficiency of solution-processed multilayer polymer light-emitting diodes using charge blocking layers

Science.gov (United States)

Kasparek, Christian; Rörich, Irina; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-01-01

By blending semiconducting polymers with the cross-linkable matrix ethoxylated-(4)-bisphenol-a-dimethacrylate (SR540), an insoluble layer is acquired after UV-illumination. Following this approach, a trilayer polymer light-emitting diode (PLED) consisting of a blend of poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) and SR540 as an electron-blocking layer, Super Yellow-Poly(p-phenylene vinylene) (SY-PPV) blended with SR540 as an emissive layer, and poly(9,9-di-n-octylfluorenyl-2,7-diyl) as a hole-blocking layer is fabricated from solution. The trilayer PLED shows a 23% increase in efficiency at low voltage as compared to a single layer SY-PPV PLED. However, at higher voltage, the advantage in current efficiency gradually decreases. A combined experimental and modelling study shows that the increased efficiency is not only due to the elimination of exciton quenching at the electrodes but also due to suppressed nonradiative trap-assisted recombination due to carrier confinement. At high voltages, holes can overcome the hole-blocking barrier, which explains the efficiency roll-off.

New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2014-06-01

Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

Passivation of organic light emitting diode anode grid lines by pulsed Joule heating

NARCIS (Netherlands)

Janka, M.; Gierth, R.; Rubingh, J.E.; Abendroth, M.; Eggert, M.; Moet, D.J.D.; Lupo, D.

2015-01-01

We report the self-aligned passivation of a current distribution grid for an organic light emitting diode (OLED) anode using a pulsed Joule heating method to align the passivation layer accurately on the metal grid. This method involves passing an electric current through the grid to cure a polymer

Efficient electron injection from solution-processed cesium stearate interlayers in organic light-emitting diodes

NARCIS (Netherlands)

Wetzelaer, G. A. H.; Najafi, A.; Kist, R. J. P.; Kuik, M.; Blom, P. W. M.

2013-01-01

The electron-injection capability of solution-processed cesium stearate films in organic light-emitting diodes is investigated. Cesium stearate, which is expected to exhibit good solubility and film formation due to its long hydrocarbon chain, is synthesized using a straightforward procedure.

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

2011-01-01

peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

The Photoluminescent Properties of New Cationic Iridium(III Complexes Using Different Anions and Their Applications in White Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Hui Yang

2015-09-01

Full Text Available Three cationic iridium(III complexes [Ir(ppy2(phen][PF6] (C1, [Ir(ppy2(phen]2SiF6 (C2 and [Ir(ppy2(phen]2TiF6 (C3 (ppy: 2-phenylpyridine, phen: 1, 10-phenanthroline using different anions were synthesized and characterized by 1H Nuclear magnetic resonance (1HNMR, mass spectra (MS, Fourier transform infrared (FTIR spectra and element analysis (EA. After the ultraviolet visible (UV-vis absorption spectra, photoluminescent (PL properties and thermal properties of the complexes were investigated, complex C1 and C3 with good optical properties and high thermal stability were used in white light-emitting diodes (WLEDs as luminescence conversion materials by incorporation with 460 nm-emitting blue GaN chips. The integrative performances of the WLEDs fabricated with complex C1 and C3 are better than those fabricated with the widely used yellow phosphor Y3Al5O12:Ce3+ (YAG. The color rendering indexes of the WLEDs with C1 and C3 are 82.0 and 82.6, the color temperatures of them are 5912 K and 3717 K, and the maximum power efficiencies of them are 10.61 Lm·W−1 and 11.41 Lm·W−1, respectively.

The Photoluminescent Properties of New Cationic Iridium(III) Complexes Using Different Anions and Their Applications in White Light-Emitting Diodes.

Science.gov (United States)

Yang, Hui; Meng, Guoyun; Zhou, Yayun; Tang, Huaijun; Zhao, Jishou; Wang, Zhengliang

2015-09-14

Three cationic iridium(III) complexes [Ir(ppy)₂(phen)][PF₆] (C1), [Ir(ppy)₂(phen)]₂SiF₆ (C2) and [Ir(ppy)₂(phen)]₂TiF₆ (C3) (ppy: 2-phenylpyridine, phen: 1, 10-phenanthroline) using different anions were synthesized and characterized by ¹H Nuclear magnetic resonance (¹HNMR), mass spectra (MS), Fourier transform infrared (FTIR) spectra and element analysis (EA). After the ultraviolet visible (UV-vis) absorption spectra, photoluminescent (PL) properties and thermal properties of the complexes were investigated, complex C1 and C3 with good optical properties and high thermal stability were used in white light-emitting diodes (WLEDs) as luminescence conversion materials by incorporation with 460 nm-emitting blue GaN chips. The integrative performances of the WLEDs fabricated with complex C1 and C3 are better than those fabricated with the widely used yellow phosphor Y₃Al₅O 12 :Ce 3+ (YAG). The color rendering indexes of the WLEDs with C1 and C3 are 82.0 and 82.6, the color temperatures of them are 5912 K and 3717 K, and the maximum power efficiencies of them are 10.61 Lm·W -1 and 11.41 Lm·W -1 , respectively.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl [Inha University, Incheon (Korea, Republic of)

2014-11-15

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

International Nuclear Information System (INIS)

Kim, Hyun-Joong; Ryu, Geun-Hwan; Yang, Won-Bo; Ryu, Han-Youl

2014-01-01

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I - V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

White organic light-emitting diodes from three emitter layers

Energy Technology Data Exchange (ETDEWEB)

Kim, M.S. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Lim, J.T. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Jeong, C.H. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Lee, J.H. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Yeom, G.Y. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of)]. E-mail: gyyeom@skku.edu

2006-11-23

Three-wavelength white organic light-emitting diodes (WOLEDs) were fabricated using two doped layers, which were obtained by separating the recombination zones into three emitter layers. A sky blue emission originated from the 4,4'-bis(2,2'-diphenylethen-1-yl)biphenyl (DPVBi) layer. A green emission originated from a tris(8-quinolinolato)aluminum (III) (Alq{sub 3}) host doped with a green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1] benz opyrano [6,7,8-ij]-quinolizin-11-one (C545T) dye. An orange emission was obtained from the N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) host doped with a red fluorescent dye, 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4 H-pyran (DCJTB). A white light resulted from the partial excitations of these three emitter layers by controlling the layer thickness and concentration of the fluorescent dyes in each emissive layer simultaneously. The electroluminescent spectrum of the device was not sensitive to the driving voltage of the device. The white light device showed a maximum luminance of approximately 53,000 cd/m{sup 2}. The external quantum and power efficiency at a luminance of approximately 100 cd/m{sup 2} were 2.62% and 3.04 lm/W, respectively.

Numerical study of the light output intensity of the bilayer organic light-emitting diodes

Science.gov (United States)

Lu, Feiping

2017-02-01

The structure of organic light-emitting diodes (OLEDs) is one of most important issues that influence the light output intensity (LOI) of OLEDs. In this paper, based on a simple but accurate optical model, the influences of hole and electron transport layer thickness on the LOI of bilayer OLEDs, which with N,N0- bis(naphthalen-1-yl)-N,N0- bis(phenyl)- benzidine (NPB) or N,N'- diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4-diamine (TPD) as hole transport layer, with tris(8-hydroxyquinoline) aluminum (Alq3) as electron transport and light emitting layers, were investigated. The laws of LOI for OLEDs under different organic layer thickness values were obtained. The results show that the LOI of devices varies in accordance with damped cosine or sine function as the increasing of organic layer thickness, and the results show that the bilayer OLEDs with the structure of Glass/ITO/NPB (55 nm)/Alq3 (75 nm)/Al and Glass/ITO/TPB (60 nm)/Alq3 (75 nm)/Al have most largest LOI. When the thickness of Alq3 is less than 105 nm, the OLEDs with TPD as hole transport layer have larger LOI than that with NPB as hole transport layer. The results obtained in this paper can present an in-depth understanding of the working mechanism of OLEDs and help ones fabricate high efficiency OLEDs.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Science.gov (United States)

Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Science.gov (United States)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

Directory of Open Access Journals (Sweden)

Abdul Halim N. Syafira

2017-01-01

Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

Science.gov (United States)

Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

2013-05-01

In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Aggregation in organic light emitting diodes

Science.gov (United States)

Meyer, Abigail

Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

Science.gov (United States)

Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

2018-06-01

Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

Powerful infrared emitting diodes

Directory of Open Access Journals (Sweden)

Kogan L. M.

2012-02-01

Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

Science.gov (United States)

Kamata, Masahiro; Abe, Mayumi

2012-01-01

A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

Optimization of freeform lightpipes for light-emitting-diode projectors.

Science.gov (United States)

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-05-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-01-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

White Organic Light-Emitting Diodes Using Two Phosphorescence Materials in a Starburst Hole-Transporting Layer

Directory of Open Access Journals (Sweden)

Tomoya Inden

2012-01-01

Full Text Available We fabricated two kinds of white organic light-emitting diodes (WOLEDs; one consisted of two emissive materials of red and blue, and the other of three emissive materials of red, green, and blue. The red and blue emissive materials were phosphorescent. We evaluated the thickness dependence of the CIE coordinate, the external quantum efficiency (EQE, and the luminance by changing the thicknesses of the Ir(btp2acac and FIrpic layers. Samples consisting of three emissive materials revealed the best CIE coordinate and the best EQE in the same sample structure. On the other hand, the samples consisting of two emissive materials revealed the best CIE coordinate and the best EQE in different structures. The best CIE coordinate of (0.33, 0.36 was observed by changing the thicknesses of the stacked active layers. The best EQE was 9.73%, which was observed in the sample consisting of different thickness of stacked active layers.

Extracting the emitter orientation in organic light-emitting diodes from external quantum efficiency measurements

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Reichardt, Lukas J.; Wehrmeister, Sebastian; Scholz, Bert J.; Mayr, Christian; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Rausch, Andreas F.; Wehlus, Thomas; Reusch, Thilo C. G. [OSRAM OLED GmbH, Wernerwerkstrasse 2, 93049 Regensburg (Germany); Ciarnáin, Rossá Mac; Danz, Norbert [Fraunhofer Institute for Applied Optics and Precision Engineering, 07745 Jena (Germany)

2014-07-28

Emitter orientation will play a major role in future applications of organic light-emitting diodes due to its strong impact on the efficiency of the devices. Up to now, determining the orientation of transition dipole moments required elaborate angular-dependent measurements of the light emission pattern. In this paper, we present a simplified and straightforward method to extract the emitter orientation from external quantum efficiency measurements. We demonstrate the validity of the method on three different dye-doped emitting systems.

Influence of the polymer concentration on the electroluminescence of ZnO nanorod/polymer hybrid light emitting diodes

Science.gov (United States)

Zaman, Saima; Zainelabdin, Ahmed; Amin, Gul; Nur, Omer; Willander, Magnus

2012-09-01

The effects of the polymer concentration on the performance of hybrid light emitting diodes (LEDs) based on zinc oxide nanorods (ZnO NRs) and poly(9,9-dioctylfluorene) (PFO) were investigated. Various characterization techniques were applied to study the performance of the PFO/ZnO NR hybrid LEDs fabricated with various PFO concentrations. The fabricated hybrid LEDs demonstrated stable rectifying diode behavior, and it was observed that the turn-on voltage of the LEDs is concentration dependent. The measured room temperature electroluminescence (EL) showed that the PFO concentration plays a critical role in the emission spectra of the hybrid LEDs. At lower PFO concentrations of 2-6 mg/ml, the EL spectra are dominated by blue emission. However, by increasing the concentration to more than 8 mg/ml, the blue emission was completely suppressed while the green emission was dominant. This EL behavior was explained by a double trap system of excitons that were trapped in the β-phase and/or in the fluorenone defects in the PFO side. The effects of current injection on the hybrid LEDs and on the EL emission were also investigated. Under a high injection current, a new blue peak was observed in the EL spectrum, which was correlated to the creation of a new chemical species on the PFO chain. The green emission peak was also enhanced with increasing injection current because of the fluorenone defects. These results indicate that the emission spectra of the hybrid LEDs can be tuned by using different polymer concentrations and by varying the current injected into the device.

All-solution processed polymer light-emitting diodes with air stable metal-oxide electrodes

NARCIS (Netherlands)

Bruyn, P. de; Moet, D.J.D.; Blom, P.W.M.

2012-01-01

We present an all-solution processed polymer light-emitting diode (PLED) using spincoated zinc oxide (ZnO) and vanadium pentoxide (V2O5) as electron and hole injecting contact, respectively. We compare the performance of these devices to the standard PLED design using PEDOT:PSS as anode and Ba/Al as

Solution-processed n-ZnO nanorod/p-Co_3O_4 nanoplate heterojunction light-emitting diode

International Nuclear Information System (INIS)

Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab; Lee, Tae Il; Myoung, Jae-Min

2017-01-01

Highlights: • The n-ZnO nanorods were epitaxially grown on p-Co_3O_4 nanoplates. • The heteroepitaxial p-n junction was fabricated by using hydrothermal process. • The LEDs emitted reddish-orange and violet light related to ZnO point defects. • The Co_3O_4 nanoplates function as a hole injection layer. • Junction between 1D NRs and 2D NPs provides a new approach to design nanostructures. - Abstract: A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co_3O_4) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co_3O_4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn_i) to oxygen interstitials (O_i) or conduction-band minimum (CBM) to oxygen vacancies (V_O), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn_i to zinc vacancies (V_Z_n).

An Exciplex Host for Deep-Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Lim, Hyoungcheol; Shin, Hyun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Huh, Jin-Suk; Kim, Jang-Joo

2017-11-01

The use of exciplex hosts is attractive for high-performance phosphorescent organic light-emitting diodes (PhOLEDs) and thermally activated delayed fluorescence OLEDs, which have high external quantum efficiency, low driving voltage, and low efficiency roll-off. However, exciplex hosts for deep-blue OLEDs have not yet been reported because of the difficulties in identifying suitable molecules. Here, we report a deep-blue-emitting exciplex system with an exciplex energy of 3.0 eV. It is composed of a carbazole-based hole-transporting material (mCP) and a phosphine-oxide-based electron-transporting material (BM-A10). The blue PhOLEDs exhibited maximum external quantum efficiency of 24% with CIE coordinates of (0.15, 0.21) and longer lifetime than the single host devices.

Improved emission spectrum from quantum dot superluminescent light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Li, L.H.; Rossetti, M.; Fiore, A. [Institute of Photonics and Quantum Electronics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland); Occhi, L.; Velez, C. [EXALOS AG, Technoparkstrasse 1, 8005 Zuerich (Switzerland)

2006-12-15

The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Three-dimensional modeling of charge transport, injection and recombination in organic light-emitting diodes

NARCIS (Netherlands)

Holst, van der J.J.M.

2010-01-01

Organic light-emitting diodes (OLEDs) are ideally suited for lighting and display applications. Commercial OLED displays as well as OLED white-light sources are presently being introduced to the market. Essential electronic processes in OLEDs are the injection of electrons and holes into an organic

White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias

International Nuclear Information System (INIS)

Zhang, Lichun; Li, Qingshan; Qu, Chong; Zhang, Zhongjun; Huang, Ruizhi; Zhao, Fengzhou

2013-01-01

Heterojunction light-emitting diodes (LEDs) based on arrays of ZnO nanorods were fabricated on p-GaN films by the hydrothermal method. Without any phosphors, white-light electroluminescence (EL) from ZnO nanorods/p-GaN heterojunction LEDs operated at reverse breakdown bias was observed. The EL spectra are composed of an ultraviolet (UV) emission centered at 382 nm, a blue light located at 431 nm and a broadband yellow–green light at around 547 nm, which originated from band-edge emission in ZnO, the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinates of EL spectrum are very close to the (0.333, 0.333) of standard white light. The origin of these emissions has been discussed and the tunneling effect in the interface is probably the mechanism to explain EL emission. (paper)

Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

International Nuclear Information System (INIS)

Zou Ye; Deng Zhenbo; Xu Denghui; Lü Zhaoyue; Yin Yuehong; Du Hailiang; Chen Zheng; Wang Yongsheng

2012-01-01

Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq 3 layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved. - Highlights: ► Alkaline metal chlorides were used as electron injection layers in organic light-emitting diodes based on Mg:Ag cathode. ► Brightness and efficiency of OLEDs with alkaline metal chlorides as electron injection layers were all greatly enhanced. ► The Improved OLED performance was attributed to the possible interfacial chemical reaction. ► Electron-only devices are fabricated to demonstrate the electron injection enhancement.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

Science.gov (United States)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

Science.gov (United States)

Wu, Jun-Yi; Chen, Show-An

2018-02-07

We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Directory of Open Access Journals (Sweden)

Shuo-Wei Chen

2016-04-01

Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials

Energy Technology Data Exchange (ETDEWEB)

Cai, Min [Iowa State Univ., Ames, IA (United States)

2011-01-01

Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to

High-efficiency orange and tandem white organic light-emitting diodes using phosphorescent dyes with horizontally oriented emitting dipoles.

Science.gov (United States)

Lee, Sunghun; Shin, Hyun; Kim, Jang-Joo

2014-09-03

Tandem white organic light-emitting diodes (WOLEDs) using horizontally oriented phosphorescent dyes in an exciplex-forming co-host are presented, along with an orange OLED. A high external quantum efficiency of 32% is achieved for the orange OLED at 1000 cd m(-2) and the tandem WOLEDs exhibit a high maximum EQE of 54.3% (PE of 63 lm W(-1)). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

Science.gov (United States)

Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

2017-08-01

Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

Science.gov (United States)

Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

2014-05-01

A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

DEFF Research Database (Denmark)

Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

1999-01-01

Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LE......, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates.......Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...

Nanoengineering of organic light-emitting diodes

International Nuclear Information System (INIS)

Lupton, J.M.

2000-11-01

This thesis reports nanoengineerging of the emission and transport properties of organic light-emitting diodes (LEDs). This is achieved by a control of the electronic material properties and the photonic device properties. A novel class of conjugated materials for electroluminescence (EL) applications is presented, based on successively branching, or dendritic, materials comprising an emissive core and a shielding dendritic architecture. Exciton localisation at the centre of these dendrimers is observed in both luminescence and absorption. A detailed quantum chemical investigation using an exciton model supports these findings and accurately describes the energies and oscillator strengths of transitions in the core and branches. The dendrimer generation describes the degree of branching and gives a direct measure of the separation and interaction between chromophores. Increasing generation is found to lead to a reduction in red tail emission. This correlates with an increase in operating field and LED efficiency. Dendrimer blends with triplet harvesting dendritic phosphors are also investigated and found to exhibit unique emission properties. A numerical device model is presented, which is used to describe the temperature dependence of single layer polymer LEDs by fitting the field-dependent mobility and the barrier to hole injection. The device model is also used to obtain mobility values for the dendrimer materials, which are in excellent agreement with results obtained from time-of-flight measurements. The dendrimer generation is shown to provide a direct control of hopping mobility, which decreases by two orders of magnitude as the dendrimer generation increases from 0 to 3. The photonic properties and spontaneous emission of an LED are modified by incorporating a periodic wavelength scale microstructure into the emitting film. This is found to double the amount of light emitted with no effect on the device current. An investigation of the angular dependence

Recycling of Gallium from End-of-Life Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Nagy S.

2017-06-01

Full Text Available Nowadays Light Emitting Diodes (LEDs are widely utilized. They are applied as backlighting in Liquid Crystal Displays (LCD and TV sets or as lighting equipments in homes, cars, instruments and street-lightning. End of life equipments are containing more and more LEDs. The recovery of valuable materials – such as Ga, Au, Cu etc. – from the LEDs is essential for the creating the circular economy. First task is the development of a proper recycling technology. Most of the researchers propose fully chemical or thermal-chemical pathway for the recycling of LEDs.

Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

International Nuclear Information System (INIS)

Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin

2011-01-01

4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

Effect of the electric field during annealing of organic light emitting diodes for improving its on/off ratio.

Science.gov (United States)

Sharma, Rahul K; Katiyar, Monica; Rao, I V Kameshwar; Unni, K N Narayanan; Deepak

2016-01-28

If an organic light emitting diode is to be used as part of a matrix addressed array, it should exhibit low reverse leakage current. In this paper we present a method to improve the on/off ratio of such a diode by simultaneous application of heat and electric field post device fabrication. A green OLED with excellent current efficiency was seen to be suffering from a poor on/off ratio of 10(2). After examining several combinations of annealing along with the application of a reverse bias voltage, the on/off ratio of the same device could be increased by three orders of magnitude, specifically when the device was annealed at 80 °C under reverse bias (-15 V) followed by slow cooling also under the same bias. Simultaneously, the forward characteristics of the device were relatively unaffected. The reverse leakage in the OLED is mainly due to the injection of minority carriers in the hole transport layer (HTL) and the electron transport layer (ETL), in this case, of holes in tris-(8-hydroxyquinoline)aluminum(Alq3) and electrons in 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA). Hence, to investigate these layers adjacent to the electrodes, we fabricated their single layer devices. The possibility of bulk traps present adjacent to electrodes providing states for injection was ruled out after estimating the trap density both before and after the reverse biased annealing. The temperature independent current in reverse bias ruled out the possibility of thermionic injection. The origin of the reverse bias current is attributed to the availability of interfacial hole levels in Alq3 at the cathode work function level in the as-fabricated device; the suppression of the same being attributed to the fact that these levels in Alq3 are partly removed after annealing under an electric field.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

Science.gov (United States)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

Directory of Open Access Journals (Sweden)

Hsin-Ying Lee

2014-01-01

Full Text Available The GaN-based flip-chip white light-emitting diodes (FCWLEDs with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

Science.gov (United States)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

International Nuclear Information System (INIS)

Kashiwagi, Y.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

2014-01-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. [Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Koizumi, A.; Fujiwara, Y. [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Takemura, Y.; Murahashi, K.; Ohtsuka, K. [Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan); Furuta, S. [Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Stacking layered structure of polymer light emitting diodes prepared by evaporative spray deposition using ultradilute solution for improving carrier balance

International Nuclear Information System (INIS)

Aoki, Youichi; Shakutsui, Masato; Fujita, Katsuhiko

2009-01-01

Polymer light-emitting diodes (PLEDs) with staking layered structures are prepared by the evaporative spray deposition using ultradilute solution (ESDUS) method, which has enabled forming a polymer layer onto another polymer layer even if both polymers are soluble in a solvent used for the preparation. By this method, polymers having various HOMO and LUMO levels can be stacked as a hole transport layer, an emitting layer and an electron transport layer as commonly employed in small molecule-based organic light emitting diodes. Here we demonstrated that a PLED having a tri-layer structure using three kinds of polymers showed significant improvement in quantum efficiency compared with those having a single or bi-layer structure of corresponding polymers.

Understanding the role of ultra-thin polymeric interlayers in improving efficiency of polymer light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Bailey, Jim; Wang, Xuhua; Bradley, Donal D. C.; Kim, Ji-Seon, E-mail: ji-seon.kim@imperial.ac.uk [Department of Physics and Centre for Plastic Electronics, South Kensington Campus, Imperial College London, London SW7 2AZ (United Kingdom); Wright, Edward N.; Walker, Alison B. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom)

2014-05-28

Insertion of ultra-thin polymeric interlayers (ILs) between the poly(3,4-ethylenedioxythiophene):polystyrene sulphonate hole injection and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) light emission layers of polymer light emitting diodes (PLEDs) can significantly increase their efficiency. In this paper, we investigate experimentally a broad range of probable causes of this enhancement with an eye to determining which IL parameters have the most significant effects. The importance of hole injection and electron blocking was studied through varying the IL material (and consequently its electronic energy levels) for both PLED and hole-only diode structures. The role of IL conductivity was examined by introducing a varying level of charge-transfer doping through blending the IL materials with a strong electron-accepting small molecule in concentrations from 1% to 7% by weight. Depositing ILs with thicknesses below the exciton diffusion length of ∼15 nm allowed the role of the IL as a physical barrier to exciton quenching to be probed. IL containing PLEDs was also fabricated with Lumation Green Series 1300 (LG 1300) light emission layers. On the other hand, the PLEDs were modeled using a 3D multi-particle Kinetic Monte Carlo simulation coupled with an optical model describing how light is extracted from the PLED. The model describes charge carrier transport and interactions between electrons, holes, singlets, and triplets, with the current density, luminance, and recombination zone (RZ) locations calculated for each PLED. The model shows F8BT PLEDs have a narrow charge RZ adjacent to the anode, while LG 1300 PLEDs have a wide charge RZ that is evenly distributed across the light emitting layer. Varying the light emitting layer from F8BT to Lumation Green Series 1300, we therefore experimentally examine the dependence of the IL function, specifically in regard to anode-side exciton quenching, on the location of the RZ. We found an exponential dependence of

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

Science.gov (United States)

Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

2013-04-07

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

InGaN/GaN light-emitting diode microwires of submillimeter length

Energy Technology Data Exchange (ETDEWEB)

Lundin, W. V., E-mail: lundin.vpegroup@mail.ioffe.ru; Rodin, S. N.; Sakharov, A. V.; Lundina, E. Yu. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation); Zadiranov, Yu. M.; Troshkov, S. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Tsatsulnikov, A. F. [Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation)

2017-01-15

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

Science.gov (United States)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

Design of passive coolers for light-emitting diode lamps using topology optimisation

DEFF Research Database (Denmark)

Alexandersen, Joe; Sigmund, Ole; Meyer, Knud Erik

2018-01-01

Topology optimised designs for passive cooling of light-emitting diode (LED) lamps are investigated through extensive numerical parameter studies. The designs are optimised for either horizontal or vertical orientations and are compared to a lattice-fin design as well as a simple parameter......, while maintaining low sensitivity to orientation. Furthermore, they exhibit several defining features and provide insight and general guidelines for the design of passive coolers for LED lamps....

Highly efficient and simplified phosphorescence white organic light-emitting diodes based on synthesized deep-blue host and orange emitter

Energy Technology Data Exchange (ETDEWEB)

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Lee, Dong Hyung [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Woo Young [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Lee, Kum Hee [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of)

2013-10-01

The authors have demonstrated a highly efficient and stable phosphorescent white organic light-emitting diode (WOLED), which has been achieved by doping only one orange phosphorescent emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N)iridium(III) acetylacetonate into an appropriate deep blue phosphorescent host, 4,4'-bis(4-(triphenylsilyl)phenyl)-1,1'-binaphthyl as an emitting layer (EML). The WOLED has been achieved by effective confinement of triplet excitons to emit a warm white color. The optimized WOLED, with a simple structure as a hole transporting layer-EML-electron transporting layer, showed a maximum luminous efficiency of 22.38 cd/A, a maximum power efficiency of 12.01 lm/W, a maximum external quantum efficiency of 7.32%, and CIEx,y coordinates of (0.38,0.42) at 500 cd/m{sup 2}, respectively. - Highlights: • Highly efficient phosphorescent white organic light-emitting diode (WOLED) • Single emitting layer consists of synthesized deep blue host and orange emitter • The WOLED with high EL efficiencies due to efficient triplet exciton confinement.

Background story of the invention of efficient blue InGaN light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Shuji [University of California, Santa Barbara, CA (United States)

2015-06-15

Shuji Nakamura discovered p-type doping in Gallium Nitride (GaN) and developed blue, green, and white InGaN based light emitting diodes (LEDs) and blue laser diodes (LDs). His inventions made possible energy efficient, solid-state lighting systems and enabled the next generation of optical storage. Together with Isamu Akasaki and Hiroshi Amano, he is one of the three recipients of the 2014 Nobel Prize in Physics. In his Nobel lecture, Shuji Nakamura gives an overview of this research and the story of his inventions. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Light extraction enhancement from organic light-emitting diodes with randomly scattered surface fixture

Energy Technology Data Exchange (ETDEWEB)

Zhou, Dong-Ying; Shi, Xiao-Bo; Gao, Chun-Hong; Cai, Shi-Duan; Jin, Yue; Liao, Liang-Sheng, E-mail: lsliao@suda.edu.cn

2014-09-30

Graphical abstract: - Highlights: • A combination of scattering layer and roughened substrate is used for light extraction from OLEDs. • The scattering layer is readily achieved by spin-coating the TiO{sub 2} sol. • The enhancement relying scattering depends on the size of TiO{sub 2} nano particles. • With the light extraction techniques the uniform emission is achieved. - Abstract: A combination of a scattering medium layer and a roughened substrate was proposed to enhance the light extraction efficiency of organic light-emitting diodes (OLEDs). Comparing with a reference OLED without any scattering layer, 65% improvement in the forward emission has been achieved with a scattering layer formed on an intentionally roughened external substrate surface of the OLED by spin-coating a sol–gel fabricated matrix containing well dispersed titania (TiO{sub 2}) particles. Such a combination method not only demonstrated efficient extraction of the light trapped in the glass substrate but also achieved homogenous emission from the OLED panel. The proposed technique, convenient and inexpensive, is believed to be suitable for the large area OLED production in lighting applications.

The Effect of Anisotropy on Light Extraction of Organic Light-Emitting Diodes with Photonic Crystal Structure

Directory of Open Access Journals (Sweden)

Wei Xu

2013-01-01

Full Text Available The light extraction efficiency of organic light-emitting diodes (OLED is greatly limited due to the difference in refractive indexes between materials of OLED. We fabricated OLED with photonic crystal microstructures in the interface between the glass substrate and the ITO anode. The light extraction efficiency can be improved by utilizing photonic crystals; however, the anisotropy effect of light extraction was clearly observed in experiment. To optimize the device performance, the effect of photonic crystal on both light extraction and angular distribution was investigated using finite-difference time domain (FDTD method. We simulated the photonic crystals with the structure of square lattice and triangle lattice. We analyzed the improvement of these structures in the light extraction efficiency of the OLED and the influence of arrangement, depth, period, and diameter on anisotropy. The optimized geometric parameters were provided, which will provide the theoretical support for designing the high performance OLED.

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

International Nuclear Information System (INIS)

Das, D; Gopikrishna, P; Singh, A; Dey, A; Iyer, P K

2016-01-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (R P ) and the parallel capacitance (C P ). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m 2 . (paper)

Modulating the line shape of magnetoconductance by varying the charge injection in polymer light-emitting diodes

Directory of Open Access Journals (Sweden)

Nidya Chitraningrum

2018-02-01

Full Text Available We fabricate the phenyl-substituted poly(p-phenylene vinylene copolymer (super yellow, SY-PPV-based polymer light-emitting diodes (PLEDs with different device architectures to modulate the injection of opposite charge carriers and investigate the corresponding magnetoconductance (MC responses. At the first glance, we find that all PLEDs exhibit the positive MC responses. By applying the mathematical analysis to fit the curves with two empirical equations of a non-Lorentzian and a Lorentzian function, we are able to extract the hidden negative MC component from the positive MC curve. We attribute the growth of the negative MC component to the reduced interaction of the triplet excitons with charges to generate the free charge carriers as modulated by the applied magnetic field, known as the triplet exciton-charge reaction, by analyzing MC responses for PLEDs of the charge-unbalanced and hole-blocking device configurations. The negative MC component causes the broadening of the line shape in MC curves.

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

The effect of electric field strength on electroplex emission at the interface of NPB/PBD organic light-emitting diodes

Science.gov (United States)

Zhao, De-Wei; Xu, Zheng; Zhang, Fu-Jun; Song, Shu-Fang; Zhao, Su-Ling; Wang, Yong; Yuan, Guang-Cai; Zhang, Yan-Fei; Xu, Hong-Hua

2007-02-01

Organic light-emitting diode (OLED) based on two kinds of blue emission materials N, N'-bis(1-naphthyl)- N, N'-diphenyl-l,l'-diphenyl-4,4'-diamine (NPB) and 2-(4-biphenylyl)-5(4- tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) was fabricated. There is only one emission peak in photoluminescence (PL) spectrum which originates from NPB exciton emission. And the electroluminescence (EL) emission peaks have an apparent red-shift with the increase of driving voltage. The red-shift emission from exciplex emission could be ruled out. Thus, by the method of Gaussian fitting it should be ascribed to the overlap of exciton emission and electroplex emission which occurs at the interface between NPB and PBD. The formation of the electroplex emission under high electric field is analyzed.

Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

Science.gov (United States)

2016-12-01

ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

Fabrication of Light Extraction Efficiency of Organic Light-Emitting Diodes with 3D Aspherical Microlens by Using Dry Etching Process

Directory of Open Access Journals (Sweden)

Y. C. Chen

2013-01-01

Full Text Available organic light-emitting diode (OLED can enable a greater artificial contrast ratio and viewing angle compared to liquid crystal display (LCD because OLED pixels directly emit light. There is a shortcoming that the internal quantum efficiency can reach values close to 100%, but about 80% light disperses because of the difference among the refractive indices of the substrate, anode, indium tin oxide (ITO film, and air. In this paper, three dimensions aspherical microlens arrays (3D A-MLAs with substrate modifications are developed to simulate the optical luminous field by using FRED software. This study modified parameters of 3D A-MLAs such as the diameter, fill-factor, aspect ratio, dry etching parameters, and electroforming rates of microlens to improve the extraction efficiency of the OLED. In dry etching, not only the aspect ratio with better extraction rate can be obtained by reactive ion etching (RIE dry etching, but also an undercutting phenomenon can be avoided. The dimensions of 3D A-MLAs can be accurately controlled in the electroforming process used to make a nickel-cobalt (Ni-Co metal mold to achieve the designed dimensions. According to the measured results, the average luminance efficacy of the OLEDs with 3D A-MLAs can be enhanced.

A white organic light emitting diode with improved stability

International Nuclear Information System (INIS)

Zhang Zhilin; Jiang Xueyin; Zhu Wenqing; Zhang Buxin; Xu Shaohong

2001-01-01

A white organic light emitting diode (OLED) has been constructed by employing a new blue material and a red dye directly doped in the blue emitting layer. For comparison, another white cell with a blocking layer has also been made. The configurations of the devices are ITO/CuPc/NPB/JBEM(P):DCJT/Alq/MgAg (device 1) and ITO/CuPc/NPB/TPBi:DCJT/Alq/MgAg (device 2) where copper phthalocyanine (CuPc) is the buffer layer, N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1.1'bipheny1-4-4'-diamine (NPB) is the hole transporting layer, 9,10-bis(3'5'-diaryl)phenyl anthracene doped with perylene (JBEM(P)) is the new blue emitting material, N,arylbenzimidazoles (TPBi) is the hole blocking layer, tris(8-quinolinolato)aluminium complex (Alq) is the electron transporting layer, and DCJT is a red dye. A stable and current independent white OLED has been obtained in device 1, which has a maximum luminance of 14 850 cd m -2 , an efficiency of 2.88 Lm W -1 , Commission Internationale de l'Eclairage coordinates of x=0.32, y=0.38 between 4-200 mA cm -2 , and a half lifetime of 2860 h at the starting luminance of 100 cd m -2 . Device 1 has a stability more than 50 times better than that of device 2. (author)

700 W blue fiber-coupled diode-laser emitting at 450 nm

Science.gov (United States)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

Effects of electron transport material on blue organ light-emitting diode with fluorescent dopant of BCzVBi.

Science.gov (United States)

Meng, Mei; Song, Wook; Kim, You-Hyun; Lee, Sang-Youn; Jhun, Chul-Gyu; Zhu, Fu Rong; Ryu, Dae Hyun; Kim, Woo-Young

2013-01-01

High efficiency blue organic light emitting diodes (OLEDs), based on 2-me-thyl-9,10-di(2-naphthyl) anthracene (MADN) doped with 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl (BCzVBi), were fabricated using two different electron transport layers (ETLs) of tris(8-hydroxyquinolino)-aluminum (Alq3) and 4,7-di-phenyl-1,10-phenanthroline (Bphen). Bphen ETL layers favored the efficient hole-electron recombination in the emissive layer of the BCzVBi-doped blue OLEDs, leading to high luminous efficiency and quantum efficiency of 8.34 cd/A at 100 mA/cm2 and 5.73% at 100 cd/m2, respectively. Maximum luminance of blue OLED with Bphen ETL and Alq3 ETL were 10670 cd/m2, and CIExy coordinates of blue OLEDs were (0.180, 0279) and (0.155, 0.212) at 100 cd/m2.

Synthesis and electroluminescent properties of blue emitting materials based on arylamine-substituted diphenylvinylbiphenyl derivatives for organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lee, Kum Hee; You, Jae Nam; Won, Jiyeon; Lee, Jin Yong [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Seo, Ji Hoon [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

2011-10-31

This paper reports the synthesis and electroluminescent properties of a series of blue emitting materials with arylamine and diphenylvinylbiphenyl groups for applications to efficient blue organic light-emitting diodes (OLEDs). All devices exhibited blue electroluminescence with electroluminescent properties that were quite sensitive to the structural features of the dopants in the emitting layers. In particular, the device using dopant 4 exhibited sky-blue emission with a maximum luminance, luminance efficiency, power efficiency, external quantum efficiency and CIE coordinates of 39,000 cd/m{sup 2}, 12.3 cd/A, 7.45 lm/W, 7.71% at 20 mA/cm{sup 2} and (x = 0.17, y = 0.31) at 8 V, respectively. In addition, a blue OLED using dopant 2 with CIE coordinates (x = 0.16, y = 0.18) at 8 V exhibited a luminous efficiency, power efficiency and external quantum efficiency of 4.39 cd/A, 2.46 lm/W and 2.97% at 20 mA/cm{sup 2}, respectively.

Enhancement and Quenching of Fluorescence by Silver Nanoparticles in Organic Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Ying-Chung Chen

2013-01-01

Full Text Available The influence of silver nanoparticles (SNPs on the performance of organic light-emitting diodes (OLEDs is investigated in this study. The SNPs are introduced between the electron-transport layers by means of thermal evaporation. SNPs are found to have the surface plasmon resonance at wavelength 525 nm when the mean particle size of SNPs is 34 nm. The optimized OLED, in terms of the spacing between the emitting layer and SNPs, is found to have the maximum luminance 2.4 times higher than that in the OLED without SNPs. The energy transfer between exciton and surface plasmons with the different spacing distances has been studied.

Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes.

Science.gov (United States)

Kim, Byung-Jae; Mastro, Michael A; Hite, Jennifer; Eddy, Charles R; Kim, Jihyun

2010-10-25

We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NARCIS (Netherlands)

Abbaszadeh, D.; Nicolai, H.T.; Crəciun, N.I.; Blom, P.W.M.

2014-01-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N,N,N′,N′ tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P.

2017-01-01

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

Science.gov (United States)

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-01

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Exciplex elimination in an organic light-emitting diode based on a fluorene derivative by inserting 4,4'-N,N'-dicarbazole-biphenylinto donor/acceptor interface

International Nuclear Information System (INIS)

Wei, Zhang; Jun-Sheng, Yu; Jiang, Huang; Ya-Dong, Jiang; Qing, Zhang; Kang-Li, Cao

2010-01-01

Organic light-emitting diodes (OLEDs) composed of a novel fluorene derivative of 2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)-6,7-difluoroquinoxaline (F2Py) were fabricated, and exciplex emission was observed in the device. To depress the exciplex in an OLED for pure colour light emission, 4, 4'-N,N'-dicarbazole-biphenyl (CBP) was inserted as a separator at the donor/acceptor interface. It was found that the device without the CBP layer emitted a green light peaking at 542 nm from the exciplex and a shoulder peak about 430 nm from F2Py. In contrast, the OLED with CBP layer emitted only a blue light peak at about 432 nm from F2Py. Device efficiencies were calculated by a simulative mode in an injection controlled type mechanism, and the results showed that exciplexes yield much lower quantum efficiency than excitons. The device with CBP has a higher power efficiency as no exciplex was present. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

Energy Technology Data Exchange (ETDEWEB)

Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

2015-07-27

We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

Organic light-emitting diodes with a spacer enhanced exciplex emission

Science.gov (United States)

Yan, Fei; Chen, Rui; Sun, Handong; Wei Sun, Xiao

2014-04-01

By introducing a spacer molecule into the blended exciplex emissive layer, the performance of the bulk heterojunction exciplex organic light-emitting diodes (OLEDs) was improved dramatically; the maximum luminous efficiency was enhanced by about 22% from 7.9 cd/A to 9.7 cd/A, and the luminous efficiency drop was reduced by 28% at 400 mA/cm2. Besides the suppressed annihilation of exciton, the time-resolved photoluminescence measurements indicated that the spacer enhanced the delayed fluorescence through increasing the backward intersystem crossing rate from the triplet to singlet exciplex state. This method is useful for developing high performance exciplex OLEDs.

Amber light-emitting diode comprising a group III-nitride nanowire active region

Science.gov (United States)

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Efficient light harvesting from flexible perovskite solar cells under indoor white light-emitting diode illumination

NARCIS (Netherlands)

Lucarelli, G.; Di Giacomo, F.; Zardetto, V.; Creatore, M.; Brown, T.M.

2017-01-01

This is the first report of an investigation on flexible perovskite solar cells for artificial light harvesting by using a white light-emitting diode (LED) lamp as a light source at 200 and 400 lx, values typically found in indoor environments. Flexible cells were developed using either

Influence of a partially oxidized calcium cathode on the performance of polymeric light emitting diodes

NARCIS (Netherlands)

Andersson, G.G.; Jong, de M.P.; Janssen, F.J.J.; Sturm, J.M.; IJzendoorn, van L.J.; Denier van der Gon, A.W.; Voigt, de M.J.A.; Brongersma, H.H.

2001-01-01

We investigated the influence of the presence of oxygen during the deposition of the calcium cathode on the structure and on the performance of polymeric light emitting diodes (pLEDs). The oxygen background pressure during deposition of the calcium cathode of polymeric LEDs was varied. Subsequently,

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

Science.gov (United States)

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

NARCIS (Netherlands)

van Woudenbergh, T; Blom, PWM; Huiberts, JN

2003-01-01

The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

Science.gov (United States)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Transparent Heat-Resistant PMMA Copolymers for Packing Light-Emitting Diode Materials

Directory of Open Access Journals (Sweden)

Shu-Ling Yeh

2015-07-01

Full Text Available Transparent and heat-resistant poly(methyl methacrylate copolymers were synthesized by bulk polymerizing methyl methacrylate (MMA, isobornyl methacrylate (IBMA, and methacrylamide (MAA monomers. Copolymerization was performed using a chain transfer agent to investigate the molecular weight changes of these copolymers, which exhibited advantages including a low molecular weight distribution, excellent optical properties, high transparency, high glass transition temperature, low moisture absorption, and pellets that can be readily mass produced by using extrusion or jet injection for packing light-emitting diode materials.

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

OpenAIRE

Defu Chen; Huifen Zheng; Zhiyong Huang; Huiyun Lin; Zhidong Ke; Shusen Xie; Buhong Li

2012-01-01

The aim of this study is to develop a light-emitting diode- (LED-) based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT). This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irrad...

Electroplex as a New Concept of Universal Host for Improved Efficiency and Lifetime in Red, Yellow, Green, and Blue Phosphorescent Organic Light-Emitting Diodes.

Science.gov (United States)

Song, Wook; Lee, Jun Yeob; Cho, Yong Joo; Yu, Hyeonghwa; Aziz, Hany; Lee, Kang Mun

2018-02-01

A new concept of host, electroplex host, is developed for high efficiency and long lifetime phosphorescent organic light-emitting diodes by mixing two host materials generating an electroplex under an electric field. A carbazole-type host and a triazine-type host are selected as the host materials to form the electroplex host. The electroplex host is found to induce light emission through an energy transfer process rather than charge trapping, and universally improves the lifetime of red, yellow, green, and blue phosphorescent organic light-emitting diodes by more than four times. Furthermore, the electroplex host shows much longer lifetime than a common exciplex host. This is the first demonstration of using the electroplex as the host of high efficiency and long lifetime phosphorescent organic light-emitting diodes.

Nozzle Printed-PEDOT:PSS for Organic Light Emitting Diodes with Various Dilution Rates of Ethanol

Directory of Open Access Journals (Sweden)

Dai Geon Yoon

2018-01-01

Full Text Available In this study, we investigated the ink formulation of poly(3,4-ethylenedioxythiophene polystyrene sulfonate (PEDOT:PSS as the hole injection layer (HIL in an organic light emitting diode (OLED structure. Generally, in a PEDOT:PSS solution, water is incorporated in the solution for the solution process. However, the fabrication of thin film which contained the water, main solvent, could not easily form by using printing technology except spin-coating process because of the high surface tension of water. On the other hand, mixing PEDOT:PSS solution and ethanol (EtOH, a dilution solvent, could restrain the non-uniform layer that forms by the high surface tension and low volatility of water. Therefore, we printed a PEDOT:PSS solution with various concentrations of EtOH by using a nozzle printer and obtained a uniform pattern. The line width of PEDOT:PSS diluted with 90% (volume ratio ehtanol was measured as about 4 mm with good uniformity with a 0.1 mm nozzle. Also, imaging software and a scanning electron microscope (SEM were used to measure the uniformity of PEDOT:PSS coated on a substrate. Finally, we fabricated a green phosphorescent OLED device with printed-PEDOT:PSS with specific concentrations of EtOH and we achieved a current efficiency of 27 cd/A with uniform quality of luminance in the case of device containing 90% EtOH.

Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

Science.gov (United States)

Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

2018-03-14

Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

Lifetime improvement mechanism in organic light-emitting diodes with mixed materials at a heterojunction interface

Science.gov (United States)

Minagawa, Masahiro; Takahashi, Noriko

2016-02-01

To investigate the lifetime improvement mechanism caused by mixing at the heterojunction interface, organic light-emitting diodes (OLEDs) with stacked and mixed 4,4‧-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (α-NPD)/tris(8-hydroxyquinoline)aluminum (Alq3) interfaces were fabricated, and changes in their displacement current due to continuous operation were measured. A decrease in accumulated holes at the α-NPD/Alq3 interface was observed in the stacked configuration devices over longer operations. These results indicate that the injected hole density was reduced during continuous operation, implying that the carrier balance became uneven in the emission region. However, few accumulated holes and changes in the displacement current due to continuous operation were observed in the devices having the mixed layer. Therefore, it was deduced that the number of holes concentrated between the α-NPD and Alq3 layers was decreased by mixing at the heterojunction interface, and that the change in the number of holes was smaller during continuous operation, resulting in less degradation.

Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

Science.gov (United States)

Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

2000-09-01

A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

Light extraction efficiency improvement in GaN-based blue light emitting diode with two-dimensional nano-cavity structure

International Nuclear Information System (INIS)

Cho, Joong-Yeon; Hong, Sung-Hoon; Byeon, Kyeong-Jae; Lee, Heon

2012-01-01

The light extraction efficiency of light emitting diode (LED) devices was improved by embedding nano-sized two-dimensional, air cavity photonic crystal (PC) structure on the indium tin oxide (ITO) layer of GaN-based LEDs. The embedded air cavity PC structure was fabricated using a reversal imprint lithography technique. The nano-cavity patterns had a width of 560 nm, a space of 240 nm and a height of 280 nm. According to current–voltage characterization, the electrical performance of the LED devices was not degraded by the fabrication process of air cavity PC structure. The optical output power of the LED device was increased by up to 10% at a drive current of 20 mA by forming the nano-cavity PC structure on the transparent electrode of the blue LED device, which was grown on a patterned sapphire substrate, to maximize the photon extraction. Since photons are scattered with cavities and are unaffected by the packaging process, which is the encapsulation of a LED device with epoxy resin, this enhancement in light extraction efficiency will not be decreased after the packaging process.

Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

National Research Council Canada - National Science Library

Das, N

2004-01-01

.... VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs...

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

Science.gov (United States)

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes

Science.gov (United States)

Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Wang, Chunliang; Liu, Yichun

2016-08-01

In this paper, we prepared the silver nanowires (AgNWs)/aluminum-doped zinc oxide (AZO) composite transparent conducting electrodes for n-ZnO/p-GaN heterojunction light emitting-diodes (LEDs) by drop casting AgNW networks and subsequent atomic layer deposition (ALD) of AZO at 150 °C. The contact resistances between AgNWs were dramatically reduced by pre-annealing in the vacuum chamber before the ALD of AZO. In this case, AZO works not only as the conformal passivation layer that protects AgNWs from oxidation, but also as the binding material that improves AgNWs adhesion to substrates. Due to the localized surface plasmons (LSPs) of the AgNWs resonant coupling with the ultraviolet (UV) light emission from the LEDs, a higher UV light extracting efficiency is achieved from LEDs with the AgNWs/AZO composite electrodes in comparison with the conventional AZO electrodes. Additionally, the antireflective nature of random AgNW networks in the composite electrodes caused a broad output light angular distribution, which could be of benefit to certain optoelectronic devices like LEDs and solar cells.

Evaluation of inorganic and organic light-emitting diode displays for signage application

Science.gov (United States)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the

Warm White Light-Emitting Diodes Based on a Novel Orange Cationic Iridium(III) Complex.

Science.gov (United States)

Tang, Huaijun; Meng, Guoyun; Chen, Zeyu; Wang, Kaimin; Zhou, Qiang; Wang, Zhengliang

2017-06-16

A novel orange cationic iridium(III) complex [(TPTA)₂Ir(dPPOA)]PF₆ (TPTA: 3,4,5-triphenyl-4 H -1,2,4-triazole, dPPOA: N,N-diphenyl-4-(5-(pyridin-2-yl)-1,3,4-oxadiazol-2-yl)aniline) was synthesized and used as a phosphor in light-emitting diodes (LEDs). [(TPTA)₂Ir(dPPOA)]PF₆ has high thermal stability with a decomposition temperature ( T d ) of 375 °C, and its relative emission intensity at 100 °C is 88.8% of that at 25°C. When only [(TPTA)₂Ir(dPPOA)]PF₆ was used as a phosphor at 6.0 wt % in silicone and excited by a blue GaN (GaN: gallium nitride) chip (450 nm), an orange LED was obtained. A white LED fabricated by a blue GaN chip (450 nm) and only yellow phosphor Y₃Al₅O 12 :Ce 3+ (YAG:Ce) (1.0 wt % in silicone) emitted cold white light, its CIE (CIE: Commission International de I'Eclairage ) value was (0.32, 0.33), color rendering index (CRI) was 72.2, correlated color temperature (CCT) was 6877 K, and luminous efficiency ( η L ) was 128.5 lm∙W -1 . Such a cold white LED became a neutral white LED when [(TPTA)₂Ir(dPPOA)]PF₆ was added at 0.5 wt %; its corresponding CIE value was (0.35, 0.33), CRI was 78.4, CCT was 4896 K, and η L was 85.2 lm∙W -1 . It further became a warm white LED when [(TPTA)₂Ir(dPPOA)]PF₆ was added at 1.0 wt %; its corresponding CIE value was (0.39, 0.36), CRI was 80.2, CCT was 3473 K, and η L was 46.1 lm∙W -1 . The results show that [(TPTA)₂Ir(dPPOA)]PF₆ is a promising phosphor candidate for fabricating warm white LEDs.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Science.gov (United States)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

High-efficiency white organic light-emitting diodes using thermally activated delayed fluorescence