WorldWideScience

Sample records for elevated temperature annealing

  1. Influence of Annealing on the Depth Microstructure of the Shot Peened Duplex Stainless Steel at Elevated Temperature

    Science.gov (United States)

    Feng, Qiang; She, Jia; Xiang, Yong; Wu, Xianyun; Wang, Chengxi; Jiang, Chuanhai

    The depth profiles of residual stresses and lattice parameters in the surface layers of shot peened duplex stainless steel at elevated temperature were investigated utilizing X-ray diffraction analysis. At each deformation depth, residual stress distributions in both ferrite and austenite were studied by X-ray diffraction stress analysis which is performed on the basis of the sin2ψ method and the lattice parameters were explored by Rietveld method. The results reveal that difference changes of depth residual compressive stress profiles between ferrite and austenite under the same annealing condition are resulted from the diverse coefficient of thermal expansion, dislocation density, etc. for different phases in duplex stainless steel. The relaxations of depth residual stresses in austenite are more obvious than those in ferrite. The lattice parameters decrease in the surface layer with the extending of annealing time, however, they increase along the depth after annealing for 16min. The change of the depth lattice parameters can be ascribed to both thermal expansion and the relaxation of residual stress. The different changes of microstructure at elevated temperature between ferrite and austenite are discussed.

  2. Effect of Elevated Temperature Annealing on Nafion/SiO2 Composite Membranes for the All-Vanadium Redox Flow Battery

    Directory of Open Access Journals (Sweden)

    Sixiu Zeng

    2018-04-01

    Full Text Available Conducting Nafion/SiO2 composite membranes were successfully prepared using a simple electrostatic self-assembly method, followed by annealing at elevated temperatures of 240, 270, and 300 °C. Membrane performance was then investigated in vanadium redox flow batteries (VRB. These annealed composite membranes demonstrated lower vanadium permeability and a better selectivity coefficient than pure Nafion membranes. The annealing temperature of 270 °C created the highest proton conductivity in the Nafion/SiO2 composite membranes. The microstructures of these membranes were analyzed using transmission electron microscopy, small-angle X-ray scattering, and positron annihilation lifetime spectroscopy. This study revealed that exposure to high temperatures resulted in an increase in the free volumes of the composite membranes, resulting in improved mechanical and chemical behavior, with the single cell system containing composite membranes performing better than systems containing pure Nafion membranes.

  3. Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

    Science.gov (United States)

    Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

    2018-03-01

    High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

  4. Amorphisation during elevated temperature implantation

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Elliman, R.G.

    1994-01-01

    Transition state theory is employed to predict the rates of amorphous zone recrystallization by direct thermal and radiation mediated thermal annealing processes. These rates are functions of zone radius and are employed to describe the competition between amorphous zone generation and annealing during elevated temperature heavy ion implantation of, particularly, Si and the accumulation of amorphousness with increasing ion fluence. This analysis predicts a change from monotonic to sigmoidal to biexponential accumulation functions with increasing annealing rate or substrate temperature in agreement with experiments. A logarithmic dependence of ion flux density upon substrate temperature for the achievement of defined fractional amorphisation is predicted and is also in agreement with the experiment. (author)

  5. The changes of ADI structure during high temperature annealing

    OpenAIRE

    A. Krzyńska; M. Kaczorowski

    2010-01-01

    The results of structure investigations of ADI during it was annealing at elevated temperature are presented. Ductile iron austempered at temperature 325oC was then isothermally annealed 360 minutes at temperature 400, 450, 500 and 550oC. The structure investigations showed that annealing at these temperatures caused substantial structure changes and thus essential hardness decrease, which is most useful property of ADI from point of view its practical application. Degradation advance of the ...

  6. Temperature Scaling Law for Quantum Annealing Optimizers.

    Science.gov (United States)

    Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

    2017-09-15

    Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

  7. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  8. Elevated temperature fracture mechanics

    International Nuclear Information System (INIS)

    Tomkins, B.

    1979-01-01

    The application of fracture mechanics concepts to cracks at elevated temperatures is examined. Particular consideration is given to the characterisation of crack tip stress-strain fields and parameters controlling crack extension under static and cyclic loads. (author)

  9. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  10. Tribological Performance of Duplex-Annealed Ti-6Al-2Sn-4Zr-2Mo Titanium Alloy at Elevated Temperatures Under Dry Sliding Condition

    Science.gov (United States)

    Heilig, Sebastian; Ramezani, Maziar; Neitzert, Thomas; Liewald, Mathias

    2018-03-01

    Ti-6Al-2Sn-4Zr-2Mo (Ti-6-2-4-2) is a typical near-α titanium alloy developed for high-temperature applications. It offers numerous enhanced properties like an outstanding strength-to-weight ratio, a low Young's modulus and exceptional creep and corrosion resistance. On the other hand, titanium alloys are known for their weak resistance to wear. Ti-6-2-4-2 is mainly applied in aero engine component parts, which are exposed to temperatures up to 565 °C. Through an increasing demand on efficiency, engine components are exposed to higher combustion pressures and temperatures. Elevated temperature tribology tests were conducted on a pin-on-disk tribometer equipped with a heating chamber. The tests were carried out under dry conditions with a constant sliding distance of 600 m with a speed of 0.16 m/s at the ball point. The sliding partner was AISI E52100 steel ball with the hardness of 58HRC. The varied input variables are normal load and temperature. It can be concluded that the coefficient of friction (CoF) increases with increasing temperature, while the wear rate decreases to its minimum at 600 °C due to increasing adhesion and oxidation mechanisms. Wear track observations using a scanning electron microscope (SEM) including energy-dispersive x-ray spectroscopy (EDS) were used to determine the occurring wear mechanisms.

  11. Global warming: Temperature estimation in annealers

    Directory of Open Access Journals (Sweden)

    Jack Raymond

    2016-11-01

    Full Text Available Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper we evaluate several methods for determining a useful operational temperature range for annealers. We show that, even where distributions deviate from the Boltzmann distribution due to ergodicity breaking, these estimates can be useful. We introduce the concepts of local and global temperatures that are captured by different estimation methods. We argue that for practical application it often makes sense to analyze annealers that are subject to post-processing in order to isolate the macroscopic distribution deviations that are a practical barrier to their application.

  12. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang, E-mail: zanghang@xjtu.edu.cn [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weilin, E-mail: weilin.jiang@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Liu, Wenbo [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Li, Tao; He, Chaohui; Yun, Di [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Zhiguang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-12-15

    Highlights: • He and Kr cavities are formed in ion-implanted and 1600 °C annealed 3C-SiC. • A higher vacancy concentration leads to formation of cavities with a smaller size and higher density. • Presence of He in irradiated 3C-SiC can significantly promote cavity growth. • Small voids are formed in Kr ion penetrated 3C-SiC during thermal annealing at 1600 °C. • Local Kr migration and trapping at cavities in SiC are observed, but long-range Kr diffusion does not occur at 1600 °C. - Abstract: Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 °C with 120 keV He{sup 2+} and 4 MeV Kr{sup 15+} ions to 10{sup 17} and 4 × 10{sup 16} cm{sup −2}, respectively. The Kr{sup 15+} ions penetrated the entire depth region of the He{sup 2+} ion implantation. Three areas of He{sup 2+}, Kr{sup 15+} and He{sup 2+} + Kr{sup 15+} ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 °C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He{sup 2+} ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr{sup 15+} ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 °C.

  13. Cu cluster shell structure at elevated temperatures

    DEFF Research Database (Denmark)

    Christensen, Ole Bøssing; Jacobsen, Karsten Wedel; Nørskov, Jens Kehlet

    1991-01-01

    Equilibrium structures of small (3–29)-atom Cu clusters are determined by simulated annealing, and finite-temperature ensembles are simulated by Monte Carlo techniques using the effective-medium theory for the energy calculation. Clusters with 8, 18, and 20 atoms are found to be particularly stable....... The equilibrium geometrical structures are determined and found to be determined by a Jahn-Teller distortion, which is found to affect the geometry also at high temperatures. The ‘‘magic’’ clusters retain their large stability even at elevated temperatures....

  14. Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang; Liu, Wenbo; Li, Tao; He, Chaohui; Yun, Di; Jiang, Weilin; Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J.; Wang, Zhiguang

    2017-02-27

    Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to 1017 and 41016 cm-2, respectively. The Kr15+ ions penetrated the entire depth of the He2+ ion implantation region. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted 3C-SiC were created through masked overlapping irradiations. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ ion only implanted 3C-SiC, helium cavities in the He2+ and Kr15+ co-implanted 3C-SiC had a smaller size but higher density. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promoted cavity growth; much smaller voids were formed in the Kr15+ ion only irradiated 3C-SiC at the same dose. In addition, local Kr migration and trapping at cavities occurred, but long-range Kr diffusion in 3C-SiC was not observed up to 1600°C.

  15. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang; Jiang, Weilin; Liu, Wenbo; Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J.; Li, Tao; He, Chaohui; Yun, Di; Wang, Zhiguang

    2016-12-01

    Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to E21 and 4E20 ions/m2 with profiles of the implanted species peaked at 450 and 1500 nm, respectively. The masked overlapping irradiation created three study areas of He2+, Kr15+ and He2+ + Kr15+ implanted SiC. The doses at the depth of the peak He concentration in He2+ and He2+ + Kr15+ implanted SiC correspond to 4 and 25 dpa. The sample was subsequently annealed at 1600°C for 3 h in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, He presence in the co-implanted 3C-SiC significantly promotes He cavity growth, as contrasted to the smaller voids formed without He in the Kr15+ irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occur, but long-range Kr diffusion in SiC is not observed up to 1600°C.

  16. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  17. High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

    Science.gov (United States)

    Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

    2018-08-15

    Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

  18. High-temperature annealing of graphite: A molecular dynamics study

    Science.gov (United States)

    Petersen, Andrew; Gillette, Victor

    2018-05-01

    A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

  19. Designing for elevated temperature

    International Nuclear Information System (INIS)

    Boer, G.A. de

    1982-01-01

    The reasons for the application of higher process temperatures are explained. The properties of stainless steel are compared with those of other materials such as molybdenum. Factors influencing the choice of the material such as availability of material data at high temperature, controllability, and strength of heat-affected zone are discussed. The process of designing a structure for safe and economic high-temperature application is outlined: design-by-analysis in contrast to the design-by-rule which is general practice for low-temperature applications. The rules laid down in the ASME Pressure Vessel Code Case N47 are explained as well as the procedure for inelastic stress calculations. (author)

  20. Temperature distribution study in flash-annealed amorphous ribbons

    International Nuclear Information System (INIS)

    Moron, C.; Garcia, A.; Carracedo, M.T.

    2003-01-01

    Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

  1. Note: A wide temperature range MOKE system with annealing capability.

    Science.gov (United States)

    Chahil, Narpinder Singh; Mankey, G J

    2017-07-01

    A novel sample stage integrated with a longitudinal MOKE system has been developed for wide temperature range measurements and annealing capabilities in the temperature range 65 K temperatures without adversely affecting the cryostat and minimizes thermal drift in position. In this system the hysteresis loops of magnetic samples can be measured simultaneously while annealing the sample in a magnetic field.

  2. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  3. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  4. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  5. Vessels for elevated temperature service

    International Nuclear Information System (INIS)

    O'Donnell, W.J.; Porowski, J.S.

    1983-01-01

    The subject is covered in chapters, entitled: introduction (background; elevated temperature concerns; design tools); design of pressure vessels for elevated temperature per ASME code; basic elevated temperature failure modes; allowable stresses and strains per ASME code (basic allowable stress limits; ASME code limits for bending; time-fraction summations; strain limits; buckling and instability; negligible creep and stress-rupture effects); combined membrane and bending stresses in creep regime; thermal stress cycles; bounding methods based on elastic core concept (bounds on accumulated strains; more accurate bounds; strain ranges; maximum stresses; strains at discontinuities); elastic follow-up; creep strain concentrations; time-dependent fatigue (combined creep rupture and fatigue damage; limits for inelastic design analyses; limits for elastic design analyses); flaw evaluation techniques; type 316 stainless steel; type 304 stainless steel; steel 2 1/4Cr1Mo; Inconel 718; Incolloy 800; Hastelloy X; detailed inelastic design analyses. (U.K.)

  6. Influence of Intercritical Annealing Temperature on Mechanical ...

    African Journals Online (AJOL)

    The fracture surfaces of the impact test samples were examined using the scanning electron microscope (SEM). Micros structural evolution of the samples was also examined with an optical microscope. The results showed that all the evaluated mechanical properties were improved by intercritical annealing, with the ...

  7. EFFECTS OF ELEVATED TEMPERATURE ON ELEVATED ...

    African Journals Online (AJOL)

    eobe

    various temperature regimes before testing. A concrete mix of 1:1:3 ... approach arising from statistical evidence is not out of place. ... This paper presents the results of concrete cubes tests ..... accelerated there by reducing the strength of the.

  8. Mechanism for elevated temperature leaching

    International Nuclear Information System (INIS)

    Kenna, B.T.; Murphy, K.D.

    1979-01-01

    Long-term, elevated temperature leaching and subsequent electron microprobe analysis of simulated waste glass and ceramic materials have been completed. A cyclic leaching pattern was found in all systems over a 20-month period. It appears that the leaching of mobile ions by simple diffusional processes is modified by more complex chemical interactions. The release of immobile ions is primarily a function of their chemical interactions in the matrix which suggests that these ions may be complex species when released into solution. A mechanism is proposed which incorporates these ideas and the cyclic phenomenon observed

  9. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  10. Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

    Science.gov (United States)

    Peres, M.; Lorenz, K.; Alves, E.; Nogales, E.; Méndez, B.; Biquard, X.; Daudin, B.; Víllora, E. G.; Shimamura, K.

    2017-08-01

    β-Ga2O3 bulk single crystals were doped by ion implantation at temperatures from room temperature to 1000 °C, using a 300 keV Europium beam with a fluence of 1  ×  1015 at cm-2. Rising the implantation temperature from room temperature to 400-600 °C resulted in a significant increase of the substitutional Eu fraction and of the number of Eu ions in the 3+  charge state as well as in a considerable decrease of implantation damage. Eu is found in both charge states 2+  and 3+  and their relative fractions are critically dependent on the implantation and annealing temperature, suggesting that defects play an important role in stabilizing one of the charge states. The damage recovery during post-implant annealing is a complex process and typically defect levels first increase for intermediate annealing temperatures and a significant recovery of the crystal only starts around 1000 °C. Cathodoluminescence spectra are dominated by the sharp Eu3+ related intra-ionic 4f transition lines in the red spectral region. They show a strong increase of the emission intensity with increasing annealing temperature, in particular for samples implanted at elevated temperature, indicating the optical activation of Eu3+ ions. However, no direct correlation of emission intensity and Eu3+ fraction was found, again pointing to the important role of defects on the physical properties of these luminescent materials.

  11. Temperature distribution in graphite during annealing in air cooled reactors

    International Nuclear Information System (INIS)

    Oliveira Avila, C.R. de.

    1989-01-01

    A model for the evaluation temperature distributions in graphite during annealing operation in graphite. Moderated an-cooled reactors, is presented. One single channel and one dimension for air and graphite were considered. A numerical method based on finite control volumes was used for partioning the mathematical equations. The problem solution involves the use of unsteady equations of mass, momentum and energy conservation for air, and energy conservation for graphite. The source term was considered as stored energy release during annealing for describing energy conservation in the graphite. The coupling of energy conservation equations in air and graphite is performed by the heat transfer term betwen air and graphite. The results agree with experimental data. A sensitivity analysis shown that the termal conductivity of graphite and the maximum inlet channel temperature have great effect on the maximum temperature reached in graphite during the annealing. (author)

  12. High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

    Energy Technology Data Exchange (ETDEWEB)

    Simos, Nikolaos, E-mail: simos@bnl.gov [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Savkliyildiz, Ilyas [Rutgers University (United States)

    2016-08-15

    S−200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 10{sup 20} cm{sup −2} peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation {sup 4}He and {sup 3}H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. The study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

  13. The effects of Mg incorporation and annealing temperature on the ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 2. The effects of Mg incorporation and annealing temperature on the physicochemical properties and antibacterial activity against {\\it Listeria monocytogenes} of ZnO nanoparticles. NIMA SHADAN ALI ABDOLAHZADEH ZIABARI RAFIEH MERAAT KAMYAR ...

  14. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  15. Cesium lead iodide solar cells controlled by annealing temperature.

    Science.gov (United States)

    Kim, Yu Geun; Kim, Tae-Yoon; Oh, Jeong Hyeon; Choi, Kyoung Soon; Kim, Youn-Jea; Kim, Soo Young

    2017-02-22

    An inorganic lead halide perovskite film, CsPbI 3 , used as an absorber in perovskite solar cells (PSCs) was optimized by controlling the annealing temperature and the layer thickness. The CsPbI 3 layer was synthesized by one-step coating of CsI mixed with PbI 2 and a HI additive in N,N-dimethylformamide. The annealing temperature of the CsPbI 3 film was varied from 80 to 120 °C for different durations and the thickness was controlled by changing the spin-coating rpm. After annealing the CsPbI 3 layer at 100 °C under dark conditions for 10 min, a black phase of CsPbI 3 was formed and the band gap was 1.69 eV. Most of the yellow spots disappeared, the surface coverage was almost 100%, and the rms roughness was minimized to 3.03 nm after annealing at 100 °C. The power conversion efficiency (PCE) of the CsPbI 3 based PSC annealed at 100 °C was 4.88%. This high PCE value is attributed to the low yellow phase ratio, high surface coverage, low rms roughness, lower charge transport resistance, and lower charge accumulation. The loss ratio of the PCE of the CH 3 NH 3 PbI x Cl 3-x and CsPbI 3 based PSCs after keeping in air was 47 and 26%, respectively, indicating that the stability of the CsPbI 3 based PSC is better than that of the CH 3 NH 3 PbI x Cl 3-x based PSC. From these results, it is evident that CsPbI 3 is a potential candidate for solar cell applications.

  16. Effect of oxidation and annealing temperature on optical and ...

    Indian Academy of Sciences (India)

    Administrator

    Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

  17. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  18. Influence of annealing time and temperature on the Fe3Al intermetallic alloys microstructure modification

    Directory of Open Access Journals (Sweden)

    K. Garbala

    2011-04-01

    Full Text Available There is an industry interesting in intermetallic alloys in recent years. There are widely possibilities to adopt this kind of materials for structural units. More expensive materials can be replaced by them. A property which limits their wider application is the low plasticity at environment and elevated temperatures. In paper the results of the thermal microstructure modification are shown. To this end, the influence of annealing time and temperature on the intermetallic phase Fe3Al grain size was investigated. The impact of these factors on micro-hardness was examined as well. It was found that these operations cause the grain size reduction and the micro-hardness decrease.

  19. Bentonite Permeability at Elevated Temperature

    Directory of Open Access Journals (Sweden)

    Katherine A. Daniels

    2017-01-01

    Full Text Available Repository designs frequently favour geological disposal of radioactive waste with a backfill material occupying void space around the waste. The backfill material must tolerate the high temperatures produced by decaying radioactive waste to prevent its failure or degradation, leading to increased hydraulic conductivity and reduced sealing performance. The results of four experiments investigating the effect of temperature on the permeability of a bentonite backfill are presented. Bentonite is a clay commonly proposed as the backfill in repository designs because of its high swelling capacity and very low permeability. The experiments were conducted in two sets of purpose-built, temperature controlled apparatus, designed to simulate isotropic pressure and constant volume conditions within the testing range of 4–6 MPa average effective stress. The response of bentonite during thermal loading at temperatures up to 200 °C was investigated, extending the previously considered temperature range. The results provide details of bentonite’s intrinsic permeability, total stress, swelling pressure and porewater pressure during thermal cycles. We find that bentonite’s hydraulic properties are sensitive to thermal loading and the type of imposed boundary condition. However, the permeability change is not large and can mostly be accounted for by water viscosity changes. Thus, under 150 °C, temperature has a minimal impact on bentonite’s hydraulic permeability.

  20. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    Science.gov (United States)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  1. HCF + LCF Interactions at Elevated Temperature

    National Research Council Canada - National Science Library

    Byrne, James; Hall, R. F; Ding, J

    2005-01-01

    ...) crack propagation in Ti- 6Al-4V will be studied under combined HCF/low cycle fatigue (LCF) loading conditions at elevated temperatures up to 350 deg C where creep stress ratcheting and environmental effects may arise...

  2. Elevated temperature erosive wear of metallic materials

    International Nuclear Information System (INIS)

    Roy, Manish

    2006-01-01

    Solid particle erosion of metals and alloys at elevated temperature is governed by the nature of the interaction between erosion and oxidation, which, in turn, is determined by the thickness, pliability, morphology, adhesion characteristics and toughness of the oxide scale. The main objective of this paper is to critically review the present state of understanding of the elevated temperature erosion behaviour of metals and alloys. First of all, the erosion testing at elevated temperature is reviewed. This is followed by discussion of the essential features of elevated temperature erosion with special emphasis on microscopic observation, giving details of the erosion-oxidation (E-O) interaction mechanisms. The E-O interaction has been elaborated in the subsequent section. The E-O interaction includes E-O maps, analysis of transition criteria from one erosion mechanism to another mechanism and quantification of enhanced oxidation kinetics during erosion. Finally, the relevant areas for future studies are indicated. (topical review)

  3. Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

    International Nuclear Information System (INIS)

    Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

    1997-01-01

    Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

  4. Low temperature annealing of cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Bech, Jakob Ilsted; Hansen, Niels

    2015-01-01

    Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires......, the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 ℃ (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large....... For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology....

  5. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  6. Elevation in brain temperature during paradoxical sleep.

    Science.gov (United States)

    Kawamura, H; Sawyer, C H

    1965-11-12

    During ordinary sleep, the temperature of the rabbit brain tended to drop, but during paradoxical sleep it rose sharply 0.1 degrees to 0.4 degrees C, a greater elevation than was observed during arousal. Changes in body temperature generally did not parallel the alterations in brain temperature. Shifts of direct-current potential in the brain are basically independent of the changes in brain temperature.

  7. ELEVATED TEMPERATURE EFFECTS ON THE ELECTRICAL ...

    African Journals Online (AJOL)

    The effects of elevated temperatures on the electrical properties of Bi metal probe to Si thin films had been investigated for electric field values 10-100V/m. Measurements of current (I) – voltage (V) characteristics were obtained at temperatures 300,320,340,360,380 and 400K respectively. The results indicated linear I–V ...

  8. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  9. Elevated temperature effects on concrete properties

    International Nuclear Information System (INIS)

    Grant, P.R.; Gruber, R.S.; Van Katwijk, C.

    1993-08-01

    The design of facilities to process or store radioactive wastes presents many challenging engineering problems. Such facilities must not only provide for safe storage of radioactive wastes but they must also be able to maintain confinement of these materials during and after natural phenomena events. Heat generated by the radioactive decay of the wastes will cause the temperature of the concrete containment structure to increase to a magnitude higher than that found in conventional structures. These elevated temperatures will cause strength-related concrete properties to degrade over time. For concrete temperatures less than 150 degree F, no reduction in strength is taken and the provisions of ACI 349, which states that higher temperatures are allowed if tests are provided to evaluate the reduction in concrete strength properties, apply. Methods proposed in a Pacific Northwest Laboratory (PNL) report, Modeling of Time-Variant Concrete Properties at Elevated Temperatures, can be used to evaluate the effects of elevated temperatures on concrete properties. Using these modified concrete properties the capacity of a concrete structure, subjected to elevated temperatures, to resist natural phenomena hazards can be determined

  10. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

    Science.gov (United States)

    Fang, F; Markwitz, A

    2009-05-01

    Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

  11. Nitrogen aggregation in Ib type synthetic diamonds at low pressure and high-temperature annealing

    International Nuclear Information System (INIS)

    Kazyuchits, N.M.; Rusetskij, M.S.; Latushko, Ya.I.; Kazyuchits, V.N.; Zajtsev, A.M.

    2015-01-01

    A new technique for annealing of diamonds at low pressure and high temperature (LPHT) is considered. The absorption spectra of synthetic Ib diamonds are given before and after annealing. This is evident from a comparison of the spectra that nitrogen aggregation process takes place at the LPHT annealing diamond. (authors)

  12. Strength properties of concrete at elevated temperatures

    International Nuclear Information System (INIS)

    Freskakis, G.N.; Burrow, R.C.; Debbas, E.B.

    1979-01-01

    A study is presented concerning the compressive strength, modulus of elasticity, and stress-strain relationships of concrete at elevated temperatures. A review of published results provides information for the development of upper and lower bound relationships for compressive strength and the modulus of elasticity and establishes exposure conditions for a lower bound thermal response. The relationships developed from the literature review are confirmed by the results of a verification test program. The strength and elasticity relationships provide a basis for the development of design stress-strain curves for concrete exposed to elevated temperatures

  13. Behavior of reinforced concrete at elevated temperatures

    International Nuclear Information System (INIS)

    Freskakis, G.N.

    1984-09-01

    A study is presented concerning the behavior of reinforced concrete sections at elevated temperatures. Material properties of concrete and reinforcing steel are discussed. Behavior studies are made by means of moment-curvature-axial force relationships. Particular attention is given to the load carrying capacity, thermal forces and moments, and deformation capacity. The effects on these properties of variations in the strength properties, the temperature level and distribution, the amount of reinforcing steel, and limiting values of strains are considered

  14. Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

  15. Void nucleation at elevated temperatures under cascade-damage irradiation

    International Nuclear Information System (INIS)

    Semenov, A.A.; Woo, C.H.

    2002-01-01

    The effects on void nucleation of fluctuations respectively due to the randomness of point-defect migratory jumps, the random generation of free point defects in discrete packages, and the fluctuating rate of vacancy emission from voids are considered. It was found that effects of the cascade-induced fluctuations are significant only at sufficiently high total sink strength. At lower sink strengths and elevated temperatures, the fluctuation in the rate of vacancy emission is the dominant factor. Application of the present theory to the void nucleation in annealed pure copper neutron-irradiated at elevated temperatures with doses of 10 -4 -10 -2 NRT dpa showed reasonable agreement between theory and experiment. This application also predicts correctly the temporal development of large-scale spatial heterogeneous microstructure during the void nucleation stage. Comparison between calculated and experimental void nucleation rates in neutron-irradiated molybdenum at temperatures where vacancy emission from voids is negligible showed reasonable agreement as well. It was clearly demonstrated that the athermal shrinkage of relatively large voids experimentally observable in molybdenum at such temperatures may be easily explained in the framework of the present theory

  16. Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

    Science.gov (United States)

    Dunz, M.; Schmalhorst, J.; Meinert, M.

    2018-05-01

    We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

  17. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  18. Surface Impedance of Copper MOB Depending on the Annealing Temperature and Deformation Degree

    International Nuclear Information System (INIS)

    Kutovoj, V.A.; Nikolaenko, A.A.; Stoev, P.I.; Vinogradov, D.V.

    2006-01-01

    Results of researches of influence of annealing temperature and deformation degree on mechanical features of copper MOB are presented. It is shown that minimal surface resistance is observed in copper samples that were subject to pre-deformation and were annealed in the range of temperatures 873...923 K

  19. Formation of Medium Carbon TRIP Steel Microstructure During Annealing in the Intercritical Temperature Range

    Directory of Open Access Journals (Sweden)

    Kokosza A.

    2014-10-01

    Full Text Available The paper presents the results of research conducted on austenite formation in the microstructure of 41MnSi6-5 TRIP steel during annealing in the intercritical temperature range. The influence of the annealing temperature on the volume fraction of retained austenite in the microstructure of the investigated steel after water quenching was also determined.

  20. Elevated environmental temperature and methamphetamine neurotoxicity

    International Nuclear Information System (INIS)

    Miller, Diane B.; O'Callaghan, James P.

    2003-01-01

    Amphetamines have been of considerable research interest for the last several decades. More recent work has renewed interest in the role of ambient temperature in both the toxicity and neurotoxicity of these drugs. We have determined that the striatal dopaminergic neurotoxicity observed in the mouse is linked in some fashion to both body and environmental temperature. Most studies of d-methamphetamine (d-METH) neurotoxicity are conducted at standard laboratory ambient temperatures (e.g., ∼21-22 deg. C) and utilizing a repeated dosage regimen (e.g., three to four injections spaced 2 h apart). A lowering of the ambient temperature provides neuro protection, while an elevation increases neurotoxicity. d-METH causes long-term depletions of triatal dopamine (DA) that are accompanied by other changes that are indicative of nerve terminal degeneration. These include argyrophilia, as detected by silver degeneration stains, and an elevation in glial fibrillary acidic protein (GFAP), a marker of reactive gliosis in response to injury, as well as a long-term decrease in tyrosine hydroxylase (TH) protein levels. here we show that increasing the ambient temperature during and for some time following dosing increases the neurotoxicity of d-METH. Mice (female 57BL6/J) given a single dosage of d-METH (20 mg/kg s.c.) and maintained at the usual laboratory ambient temperature show minimal striatal damage (an ∼15% depletion of DA and an ∼ 86% increase in GFAP). substantial striatal damage (e.g., an ∼70% depletion of DA and an ∼200% elevation in GFAP) was induced by this regimen if mice were maintained at 27 deg. C for 24 or 72 h following dosing. An increase in neurotoxicity was also apparent in mice kept at an elevated temperature for only 5 or 9 h, but keeping animals at 27 deg. C for 24 or 72 h was the most effective in increasing the neurotoxicity of d-METH. Our data show how a relatively minor change in ambient temperature can have a major impact on the degree of

  1. Elevated temperature forming method and preheater apparatus

    Science.gov (United States)

    Krajewski, Paul E; Hammar, Richard Harry; Singh, Jugraj; Cedar, Dennis; Friedman, Peter A; Luo, Yingbing

    2013-06-11

    An elevated temperature forming system in which a sheet metal workpiece is provided in a first stage position of a multi-stage pre-heater, is heated to a first stage temperature lower than a desired pre-heat temperature, is moved to a final stage position where it is heated to a desired final stage temperature, is transferred to a forming press, and is formed by the forming press. The preheater includes upper and lower platens that transfer heat into workpieces disposed between the platens. A shim spaces the upper platen from the lower platen by a distance greater than a thickness of the workpieces to be heated by the platens and less than a distance at which the upper platen would require an undesirably high input of energy to effectively heat the workpiece without being pressed into contact with the workpiece.

  2. Magnesium sacrificial anode behavior at elevated temperature

    International Nuclear Information System (INIS)

    Othman, Mohsen Othman

    2006-01-01

    Magnesium sacrificial anode coupled to mild steel was tasted in sodium chloride and tap water environments at elevated temperatures. The anode failed to protect the mild steel specimens in tap water environment at all temperatures specified. This was partly due to low conductivity of this medium. The temperature factor did not help to activate the anode in this medium. In sodium chloride environment the anode demonstrated good protection for steel cathodes. The weight loss was high for magnesium in sodium chloride environment particularly beyond 60 degree centigrade. In tap water environment the weight loss was negligible for the anode. It also suffered localized shallow pitting corrosion. Magnesium anode cannot be utilized where high temperature is involved particularly in high conductivity mediums. Protection of structures containing high resistivity waters is not feasible using sacrificial anode system. (author)

  3. Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

    Energy Technology Data Exchange (ETDEWEB)

    Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

    1975-01-01

    The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

  4. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    International Nuclear Information System (INIS)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

    2012-01-01

    Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

    International Nuclear Information System (INIS)

    Glasko, J.M.; Elliman, R.G.; Zou, J.; Cockayne, D.J.H.; Fitz Gerald, J.D.

    1998-01-01

    High energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. In this study, the effect of subsequent thermal annealing was investigated. Three distinct annealing stages were identified and correlated with the evolution of the defect microstructure. In the temperature range from 350 to 600 deg C, a gradual recovery of strain is observed. This is believed to result from the annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600 deg C, consistent with an excess vacancy concentration in the irradiated alloy layer. The 600 to 750 deg C range is marked by pronounced maximal recovery of strain, and is correlated with the dissolution of faulted loops in the substrate. At temperatures in the range 750-1000 deg C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, towards the surface. (authors)

  6. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    International Nuclear Information System (INIS)

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-01-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

  7. Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

    International Nuclear Information System (INIS)

    Galloway, R.B.

    2002-01-01

    It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

  8. Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

    1990-01-01

    The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

  9. The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

    International Nuclear Information System (INIS)

    Chen, Pei-Yun; Chen, C.C.; Harmon, Julie P.; Lee, Sanboh

    2014-01-01

    This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime

  10. The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Pei-Yun [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chen, C.C. [Institute of Nuclear Energy Research, Longtan, Taoyuan 325, Taiwan (China); Harmon, Julie P. [Department of Chemistry, University of South Florida, Tampa, FL 33620 (United States); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

    2014-08-01

    This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime.

  11. Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

    International Nuclear Information System (INIS)

    Chen, Bin; Tang, Kun; Gu, Shulin; Ye, Jiandong; Huang, Shimin; Gu, Ran; Zhang, Yang; Yao, Zhengrong; Zhu, Shunming; Zheng, Youdou

    2014-01-01

    Highlights: • To avoid the forming of Co clusters and explore the origin of the magnetism, detailed investigation on the properties of the Co-implanted ZnO films with a rather low dose of 8 × 10 15 cm −2 and high implantation energy of 1 MeV were carried out. • The crystalline structure of the damaged region caused by ion-implantation has been recovered via the thermal annealing treatment at the temperature of 900 °C and above. • The low temperature magnetic hysteresis loops have indicated paramagnetism for the annealed films with weak ferromagnetic characteristics. • The zero-field cooling (ZFC) magnetization curves of the Co-implanted ZnO samples have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C. - Abstract: The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0 0 0 1) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 °C and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co 2+ ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects

  12. Interference effect on annealing temperature of A and E centers in silicon.

    Science.gov (United States)

    Fang, P. H.; Tanaka, T.

    1971-01-01

    The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

  13. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    Science.gov (United States)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  14. Effect of annealing temperature on the mechanical properties of zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. Hoop creep characteristics of zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The critical annealing temperature at which a minimum creep strain occurs decreases as the applied stress increases. An additional test at 700F and 30 ksi hoop stress was conducted to demonstrate that the critical annealing temperature is essentially independent of the test temperature. Plausible explanations based on differing substructures developed in cold-worked stress-relieved material are forwarded. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. R-parameters were determined from in situ transverse strain gage measurements in uniaxial tensile tests. P-parameters were calculated from uniaxial test data (R and yield stress) and hoop yield stress determined in biaxial, closed-end internal pressurization tests

  15. Effect of Annealing Temperature on Broad Luminescence of Silver-Exchanged Zeolites Y and A

    Science.gov (United States)

    Gui, Sa Chu Rong; Lin, H.; Bao, W.; Wang, W.

    2018-05-01

    The annealing temperature dependence of luminescence properties of silver (Ag)-exchanged zeolites Y and A was studied. It was found that the absorbance and excitation/emission bands are strongly affected by the thermal treatments. With increase in annealing temperature, the absorbance of Ag in zeolite Y increases at first and then decreases. However, the position of the excitation/emission band in zeolite Y was found to be insensitive to the annealing temperature. In contrast, the excitation/emission bands in zeolite A are particularly sensitive to the annealing temperature. The difference of such temperature dependence in zeolites Y and A may be due to the different microporous structure of the two minerals. Moreover, the fact that this dependence is not observed in Ag-exchanged zeolite Y is likely to be due to the difficulty in dehydration of zeolite Y in air or due to the weak Ag+-Ag+ interaction in zeolite Y.

  16. Optimization Of Nakazima Test At Elevated Temperatures

    International Nuclear Information System (INIS)

    Turetta, A.; Ghiotti, A.; Bruschi, S.

    2007-01-01

    Nowadays hot forming of High Strength Steel is gaining the strict requirements of automotive producer: in fact deformation performed simultaneously with quenching assures a fully martensitic microstructure at room temperature and thus high strength properties that allow the thickness reduction of the body-in-white components. Basic aspects of hot stamping are still under investigation and supplementary achievements are expected for a successful application of sheet metal forming technologies at elevated temperatures. Among data needed to settle a numerical model of the process, information about material formability may help in better designing and optimizing hot stamping operations. In the first part of the work, a new experimental apparatus based on Nakazima concept is presented; process parameters are optimized in order to accurately replicate the thermo-mechanical conditions typical of the industrial process, paying particular attention to the thermal and microstructural evolution. On the other hand, as commercial FE codes require the implementation of Forming Limit Diagrams at constant temperature, numerical investigations have been performed in order to determine the proper testing conditions to obtain FLD at nearly constant temperature

  17. Annealing of low-temperature GaAs studied using a variable energy positron beam

    International Nuclear Information System (INIS)

    Keeble, D.J.; Umlor, M.T.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

    1993-01-01

    The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 degree C were measured. A gallium vacancy concentration of approximately 3x10 17 cm -3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 degree C. The dominant positron traps in samples annealed at and below 400 degree C are distinct from those acting for samples annealed to 500 or 600 degree C. The change in S parameter for the 600 degree C annealed sample compared to the GaAs substrate, S LT,600 =1.047S sub , is consistent with divacancies or larger open volume defects

  18. In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

    International Nuclear Information System (INIS)

    Yun, Di; Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M.

    2015-01-01

    U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

  19. In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Di, E-mail: diyun1979@xjtu.edu.cn [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Xi' an Jiao Tong University, 28 Xian Ning West Road, Xi' an 710049 (China); Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

    2015-12-15

    U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

  20. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    Science.gov (United States)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  1. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  2. Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

    Science.gov (United States)

    Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

    2013-02-01

    This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

  3. Annealing temperature effect on self-assembled Au droplets on Si (111).

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

    2013-12-13

    We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

  4. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  5. Analusis techniques for elevated temperature applications

    International Nuclear Information System (INIS)

    Lewis, D.J.; Hellen, T.K.

    1975-01-01

    This paper reviews some of the more generally used methods of analysis of stress and strain in structures at elevated temperatures, with particular emphasis on finite element methods. It is shown that where sufficiently large computers are available, and where cost is not a severe limitation, creep and plasticity behaviour can be computed for a wide range of components. Where these effects are encountered simultaneously, more knowledge of materials behaviour is required. Calculation of stress and strain is usually only a means to the designer's main aim, which is proving the life and integrity of his structure. The shortcomings of computational methods in this respect are discussed, and a brief review given of some of the 'short cut' methods of life assessment available to the designer. (author)

  6. PEM Water Electrolysis at Elevated Temperatures

    DEFF Research Database (Denmark)

    Hansen, Martin Kalmar

    . This is followed in chapter 4 by a description of the electrolysis setups and electrolysis cells used during the work. Two different setups were used, one operating at atmospheric pressure and another that could operate at elevated pressure so that liquid water electrolysis could be performed at temperature above...... such as porosity and resistance which were supported by images acquired using scanning electron microscopy (SEM). In chapters 6 and 7 the results of the steam electrolysis and pressurised water electrolysis, respectively, are presented and discussed. The steam electrolysis was tested at 130 °C and atmospheric...... needed and hence it has become acute to be able to store the energy. Hydrogen has been identified as a suitable energy carrier and water electrolysis is one way to produce it in a sustainable and environmentally friendly way. In this thesis an introduction to the subject (chapter 1) is given followed...

  7. Effect of annealing temperature on the stress and structural properties of Ge core fibre

    Science.gov (United States)

    Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

    2017-09-01

    Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

  8. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2014-07-01

    Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

  9. Preparation of (Bi, Pb)-2223/Ag tapes by high temperature sintering and post-annealing process

    DEFF Research Database (Denmark)

    Hua, L.; Grivel, Jean-Claude; Andersen, L.G.

    2002-01-01

    A novel heat treatment process was developed to fabricate (Bi, Pb)-2223/Ag tapes with high critical current density (J(c)). The process can be divided into two parts: reformation and post-annealing. Tapes were first heated to the maximum temperature (830-860 degreesC) followed by slow cooling...... (reformation). Then, tape, were annealed between 760 and 820 degreesC (post-annealing). Reformation is expected to produce a large amount of liquid phase which may heat microcracks, decrease porosity, and improve grain growth. However, since the sintering temperature is beyond the Bi-2223 single-phase region......-energy synchrotron XRD and SEM/EDX. Some process parameters e.g. sintering temperature. cooling rate. and post-annealing time were optimised. (C) 2002 Elsevier Science B.V. All rights reserved....

  10. High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

    Science.gov (United States)

    Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

    2012-06-01

    Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

  11. Effect of annealing temperature on electrochemical characteristics of ruthenium oxide/multi-walled carbon nanotube composites

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Min-Kang [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of); Saouab, Abdelghani [Department of Mechanical Engineering, University of Le Havre, Place Robert Schuman, BP 4006, 76610 Le Havre (France); Park, Soo-Jin, E-mail: sjpark@inha.ac.k [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of)

    2010-02-25

    The preparation and characterization of high-surface-area ruthenium oxide (RuO{sub 2})/multi-walled carbon nanotubes (MWCNTs) composite electrodes for use in supercapacitors is reported in this work. The RuO{sub 2}/MWCNTs composites were prepared by the polyol process of RuO{sub 2} into MWCNTs and by Ru annealing in air before mixed with MWCNTs. The chemically oxidized and annealed Ru nanoparticles contribute a pseudocapacitance to the electrodes and dramatically improve the energy storage characteristics of the MWCNTs. These composites annealed at 200 deg. C demonstrate specific capacitances in excess of 130 F/g in comparison to 80 F/g for pristine MWCNTs. The annealing temperature is found to play an important role, as it affects the electrochemical performance of annealed RuO{sub 2}/MWCNTs composites critically due to its influence on the diffusion of protons into the structure.

  12. The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

    International Nuclear Information System (INIS)

    Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

    2017-01-01

    Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

  13. Structural transformation of implanted diamond layers during high temperature annealing

    International Nuclear Information System (INIS)

    Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-01-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  14. Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

    Science.gov (United States)

    Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

    2016-04-20

    The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

  15. Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature

    International Nuclear Information System (INIS)

    Chithambo, M.L.

    2015-01-01

    The influence of annealing, irradiation dose, preheating and measurement temperature on luminescence lifetimes has been studied in quartz annealed at 1000 °C. The measurements were supplemented by studies on quartz annealed at 900 and 800 °C. Lifetimes increase with dose as well as with temperature and duration of annealing between 800 and 1000 °C. Preheating produces the same effect. The changes are accounted for in terms of hole-transfer from the non-radiative luminescence centre to and between radiative centres. The influence of measurement temperature on lifetimes depends on whether the stimulation is carried out from ambient to 200 °C or otherwise. This result is unlike that in quartz annealed at or below 500 °C where lifetimes are independent of the direction of heating. In particular, lifetimes decrease monotonically when measurements are made from 20 to 200 °C but not when recorded from 200 to 20 °C. The latter produces a pattern resembling that in quartz annealed up to 500 °C. The results are concluded as evidence of thermal effects on separate luminescence centres. In support of this, different values of the activation energy for thermal quenching were found for each supposed luminescence centre. The change of the corresponding luminescence intensity with temperature is also qualitatively consistent with this notion. - Highlights: • Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature is reported. • Lifetimes increase with dose, annealing between 800 and 1000 °C, and preheating. • Lifetimes under stimulation temperature are affected by direction of heating. • Changes are accounted for in terms of hole-transfer luminescence centres.

  16. The influence of annealing temperature and time on the efficiency of pentacene: PTCDI organic solar cells

    Directory of Open Access Journals (Sweden)

    Mehmet Biber

    Full Text Available In this study, fabrication of a polycyclic aromatic hydrocarbon/Perylene Tetracarboxylic Di-Imide (PTCDI, donor/acceptor solar cells are presented using physical vapour deposition technique in a 1000 class glove box. An ITO/PEDOT:PSS/Pentacene/PTCDI/Al (ITO = Indium Tin Oxide and PEDOT:PSS = poly(3,4-ethylenedioxythiophene polystyrene sulfonate solar cell has been obtained and the power conversion efficiency, PCE (η of about 0.33% has been obtained under simulated solar illumination of 300 W/m2. Furthermore, the effects of annealing temperatures (at 100 and 150 °C and of annealing (at 100 °C times for 5 and 10 min. on the power conversion efficiency, η of the solar cells have also been investigated. In general, it has been seen that the thermal annealing deteriorated the characteristics parameters of Pentacene/PTCDI solar cell such that both fill factor, FF and η decreased after annealing and with increase of annealing time. Atomic force microscopy (AFM images showed that the phase segregation and grain size increased and the surface roughness of Pentacene film decreased and these effects reduced the η value. The η values of the solar cell have been determined as 0.33%, 0.12% and 0.06% for pre-annealing, annealing at 100 and 150 °C, respectively. Keywords: Organic solar cells, PTCDI, Pentacene, Annealing

  17. Effect of Anneal temperature and Time on Change of Texture and Hardness of Al-Cu-Mg

    International Nuclear Information System (INIS)

    Masrukan; Adolf Asih, S.

    2000-01-01

    Observation of the effect of annealing temperature to its texture and hardness of the Al-Cu-Mg has been done. In this experiments aluminium alloy powder and 5 pieces cubes of this alloy with size of 8 x 8 x 8 mm 3 were used. The powder was not annealed, 2 pieces cube were annealed for 20 hours at temperatures of 200 o C and 300 o respectively, finally 3 pieces cube were annealed at temperature of 400 o C. Texture measurement was done using x-ray diffraction with wave length of 1.78892 A using inverse pole figure method. The hardness testing results at constant temperature of 400 o C and various time indicated that the hardness values are decreased with increasing annealed time. Also, at hardness testing for constant time and various annealing temperatures indicated that the hardness values decreased with increasing annealing temperature

  18. Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

    International Nuclear Information System (INIS)

    Kim, J.C.; Ji, J.-Y.; Kline, J.S.; Tucker, J.R.; Shen, T.-C.

    2003-01-01

    Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3-1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 deg. C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication

  19. High-Temperature Electrical Insulation Behavior of Alumina Films Prepared at Room Temperature by Aerosol Deposition and Influence of Annealing Process and Powder Impurities

    Science.gov (United States)

    Schubert, Michael; Leupold, Nico; Exner, Jörg; Kita, Jaroslaw; Moos, Ralf

    2018-04-01

    Alumina (Al2O3) is a widely used material for highly insulating films due to its very low electrical conductivity, even at high temperatures. Typically, alumina films have to be sintered far above 1200 °C, which precludes the coating of lower melting substrates. The aerosol deposition method (ADM), however, is a promising method to manufacture ceramic films at room temperature directly from the ceramic raw powder. In this work, alumina films were deposited by ADM on a three-electrode setup with guard ring and the electrical conductivity was measured between 400 and 900 °C by direct current measurements according to ASTM D257 or IEC 60093. The effects of film annealing and of zirconia impurities in the powder on the electrical conductivity were investigated. The conductivity values of the ADM films correlate well with literature data and can even be improved by annealing at 900 °C from 4.5 × 10-12 S/cm before annealing up to 5.6 × 10-13 S/cm after annealing (measured at 400 °C). The influence of zirconia impurities is very low as the conductivity is only slightly elevated. The ADM-processed films show a very good insulation behavior represented by an even lower electrical conductivity than conventional alumina substrates as they are commercially available for thick-film technology.

  20. W nano-fuzzes: A metastable state formed due to large-flux He"+ irradiation at an elevated temperature

    International Nuclear Information System (INIS)

    Wu, Yunfeng; Liu, Lu; Lu, Bing; Ni, Weiyuan; Liu, Dongping

    2016-01-01

    W nano-fuzzes have been formed due to the large-flux and low-energy (200eV) He"+ irradiation at W surface temperature of 1480 °C. Microscopic evolution of W nano-fuzzes during annealing or low-energy (200 eV) He"+ bombardments has been observed using scanning electron microscopy and thermal desorption spectroscopy. Our measurements show that both annealing and He"+ bombardments can significantly alter the structure of W nano-fuzzes. W nano-fuzzes are thermally unstable due to the He release during annealing, and they are easily sputtered during He"+ bombardments. The current study shows that W nano-fuzzes act as a metastable state during low-energy and large-flux He"+ irradiation at an elevated temperature. - Highlights: • W nano-fuzzes microscopic evolution during annealing or He"+ irradiated have been measured. • W nano-fuzzes are thermally unstable due to He release during annealing. • He are released from the top layer of W fuzzes by annealing. • Metastable W nano-fuzzes are formed due to He"+ irradiation at an elevated temperature.

  1. Tailoring the magnetic properties and magnetorheological behavior of spinel nanocrystalline cobalt ferrite by varying annealing temperature.

    Science.gov (United States)

    Sedlacik, Michal; Pavlinek, Vladimir; Peer, Petra; Filip, Petr

    2014-05-14

    Magnetic nanoparticles of spinel nanocrystalline cobalt ferrite were synthesized via the sol-gel method and subsequent annealing. The influence of the annealing temperature on the structure, magnetic properties, and magnetorheological effect was investigated. The finite crystallite size of the particles, determined by X-ray diffraction and the particle size observed via transmission electron microscopy, increased with the annealing temperature. The magnetic properties observed via a vibrating sample magnetometer showed that an increase in the annealing temperature leads to the increase in the magnetization saturation and, in contrast, a decrease in the coercivity. The effect of annealing on the magnetic properties of ferrite particles has been explained by the recrystallization process at high temperatures. This resulted in grain size growth and a decrease in an imposed stress relating to defects in the crystal lattice structure of the nanoparticles. The magnetorheological characteristics of suspensions of ferrite particles in silicone oil were measured using a rotational rheometer equipped with a magnetic field generator in both steady shear and small-strain oscillatory regimes. The magnetorheological performance expressed as a relative increase in the magnetoviscosity appeared to be significantly higher for suspensions of particles annealed at 1000 °C.

  2. Very low temperature rise laser annealing of radiation-damaged solar cells in orbit

    International Nuclear Information System (INIS)

    Poulek, V.

    1988-01-01

    Solar cells of all space objects are damaged by radiation in orbit. This damage, however, can be removed by laser annealing. A new in-orbit laser regeneration system for both body- and spin-stabilized space objects is proposed. For successful annealing of solar cells damaged by 10 years' radiation dose in orbit it is necessary for the temperature rise in the incidence point of the laser beam to reach about 400 0 C. By continuous regeneration, however, between two annealing cycles the solar cells are hit by about two orders of magnitude lower radiation dose. This makes it possible to carry out the regeneration at a temperature rise well under 1 0 C! If an optimal laser regeneration system is used, such low temperature rise laser annealing of radiation-damaged solar cells is possible. A semiconductor GaAlAs diode laser with output power up to 10 mW CW was used for annealing. Some results of the very low temperature rise annealing experiment are given in this paper. (author)

  3. Effects of annealing temperatures on the physicochemical properties of nickel-phosphorus deposits

    International Nuclear Information System (INIS)

    Bai, Allen; Hu, C.-C.

    2003-01-01

    The dependence of physicochemical properties, including microhardness, magnetism, morphology, crystalline information, roughness factor and hydrogen evolution ability, on the phosphorus content, varying from 0 to 28 atomic percentage (at.%), of Ni-P deposits with annealing in air at eight temperatures (i.e., 100, 200, 300, 400, 500, 600, 700 and 800 deg. C) were systematically compared. The microhardness reached a maximum at 400 deg. C due to the crystallization of Ni and Ni 3 P at 400 deg. C and the significant diffusion of Cu into the Ni-P deposit at temperatures ≥500 deg. C, confirmed by the depth profiles of Ni, P, Cu and O elements. The paramagnetism of Ni-P deposit was gradually transformed into ferromagnetism at 400 deg. C, attributable to the phase separation of Ni and Ni 3 P. The roughness factor, R a , of the deposits with P contents ≤12 at.% were increased with increasing the annealing temperature at temperatures a of the deposits with 17-28 at.% of P is approximately independent of the annealing temperature. The rate of hydrogen evolution decreased with increasing the annealing temperature because the specific activity (i/R a ) of the Ni-P deposits was decreased with increasing the annealing temperature

  4. Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

    Science.gov (United States)

    Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

    2018-05-01

    ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

  5. Influence of low-temperature annealing on InSb properties

    International Nuclear Information System (INIS)

    Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

    1975-01-01

    Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

  6. Enhanced adhesion between carbon nanotubes and substrate surfaces by low-temperature annealing

    International Nuclear Information System (INIS)

    Jang, Chi Woong; Byun, Young Tae; Woo, Deok Ha; Lee, Seok; Jhon, Young Min

    2012-01-01

    We enhanced the adhesion forces between carbon nanotubes (CNTs) and the substrate surface by using a low-temperature annealing process at 180 .deg. C for 300 s to protect the CNTs throughout the processes in photolithography for fabricating CNT-based devices, especially ion and bio sensors which are always exposed to liquids. The adhesion force was tested by using the adhesion durability test of soaking the fabricated CNT field effect transistors (CNT-FETs) in de-ionized water at room temperature for 300 s, and the adsorption quantities of CNTs were analyzed by using I - V measurements on the CNT-FETs before and after each adhesion durability test. The conductance change of the CNT-FETs fabricated with the annealing process was considerably decreased by more than a factor of 10 5 compared to that without the annealing process, implying that CNTs adhere much more strongly to the substrate after the annealing process.

  7. Modeling of AlMg Sheet Forming at Elevated Temperatures

    NARCIS (Netherlands)

    van den Boogaard, Antonius H.; Bolt, P.; Werkhoven, R.

    2001-01-01

    The process limits of aluminum sheet forming processes can be improved by control-ling local flow behavior by means of elevated temperatures and temperature gradients. In order to accurately model the deep drawing or stretching of aluminum sheet at elevated temperatures, a model is required that

  8. Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

    Science.gov (United States)

    Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

    2017-01-01

    This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

  9. Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

    Science.gov (United States)

    Hu, Sheng-qing; Peng, Kun; Chen, Hong

    2017-03-01

    Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10-8 cm2 s-1 and 2.4×10-7 cm2 s-1, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions.

  10. High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

    International Nuclear Information System (INIS)

    Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

    2006-01-01

    High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

  11. CdCl{sub 2} activation treatment: A comprehensive study by monitoring the annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Bing Lei; Rimmaudo, Ivan; Salavei, Andrei [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, Fabio [Department of Biotechnology, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Di Mare, Simone [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Menossi, Daniele; Bosio, Alessio; Romeo, Nicola [Physics and Earth Science Department, University of Parma, V.le G.P. Usberti 7A, 43124 (Italy); Romeo, Alessandro, E-mail: alessandro.romeo@univr.it [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy)

    2015-05-01

    CdTe thin film solar cells have demonstrated high scalability, high efficiency and low cost fabrication process. One of the key factors for the achievements of this technology is the transformation of the absorber layer by an activation treatment where chlorine reacts with CdTe in a controlled atmosphere or in air, improving the electrical properties of the absorber and enhancing the intermixing of the CdS/CdTe layers. With this work we study the activation process by analyzing the CdCl{sub 2} treatment made by wet deposition with different annealing temperatures from 310 °C up to 410 °C in air keeping the same CdCl{sub 2} concentration in methanol solution. In this way the whole dynamic of the chemical reaction from the minimum activation energy is analyzed. Activated CdTe layers have been analyzed by means of X-ray diffraction and atomic force microscopy. Finished devices with efficiencies from 8% for the low temperature annealing up to more than 14% for the high temperature ones have been thoroughly analyzed by current-voltage, capacitance-voltage and drive-level capacitance profiling techniques. The best performance has been achieved with an annealing temperature of 395 °C. - Highlights: • CdCl{sub 2} treatment with 6 different annealing temperatures has been studied. • The amount and the nature of defects change drastically with temperature. • Jsc is proportional to annealing temperature and to grain size. • Efficiency increases with annealing temperature until a threshold is reached.

  12. Effects of annealing temperature in a metal alloy nano-dot memory

    International Nuclear Information System (INIS)

    Lee, Jung Min; Lee, Gae Hun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Tetsu

    2011-01-01

    The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ∼700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 .deg. C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

  13. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  14. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  15. Sensitization of erbium in silicon-rich silica : the effect of annealing temperature and hydrogen passivation

    International Nuclear Information System (INIS)

    Wilkinson, A.R.; Forcales, M.; Elliman, R.G.

    2005-01-01

    This paper reports on the effect of annealing temperature and hydrogen passivation on the excitation cross-section and photoluminescence of erbium in silicon-rich silica. Samples were prepared by co-implantation of Si and Er into SiO 2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved photoluminescence, the effective erbium excitation cross-section is shown to increase by a factor 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 μm only in the presence of Si nanocrystals. The implications fo these results for realizing a silicon-based optical amplifier are also discussed. (author). 19 refs., 3 figs

  16. Elevated temperature creep behavior of Inconel alloy 625

    International Nuclear Information System (INIS)

    Purohit, A.; Burke, W.F.

    1984-07-01

    Inconel 625 in the solution-annealed condition has been selected as the clad material for the fuel and control rod housing assemblies of the Upgraded Transient Reactor Test Facility (TREAT Upgrade or TU). The clad is expected to be subjected to temperatures up to about 1100 0 C. Creep behavior for the temperature range of 800 0 C to 1100 0 C of Inconel alloy 625, in four distinct heat treated conditions, was experimentally evaluated

  17. In vitro behavior of MC3T3-E1 preosteoblast with different annealing temperature titania nanotubes.

    Science.gov (United States)

    Yu, W Q; Zhang, Y L; Jiang, X Q; Zhang, F Q

    2010-10-01

    Titanium oxide nanotube layers by anodization have excellent potential for dental implants because of good bone cell promotion. It is necessary to evaluate osteoblast behavior on different annealing temperature titania nanotubes for actual implant designs.  Scanning Electron Microscopy, X-Ray polycrystalline Diffractometer (XRD), X-ray photoelectron Spectroscope, and Atomic Force Microscopy (AFM) were used to characterize the different annealing temperature titania nanotubes. Confocal laser scanning microscopy, MTT, and Alizarin Red-S staining were used to evaluate the MC3T3-E1 preosteoblast behavior on different annealing temperature nanotubes.  The tubular morphology was constant when annealed at 450°C and 550°C, but collapsed when annealed at 650°C. XRD exhibited the crystal form of nanotubes after formation (amorphous), after annealing at 450°C (anatase), and after annealing at 550°C (anatase/rutile). Annealing led to the complete loss of fluorine on nanotubes at 550°C. Average surface roughness of different annealing temperature nanotubes showed no difference by AFM analysis. The proliferation and mineralization of preostoblasts cultured on anatase or anatase/rutile nanotube layers were shown to be significantly higher than smooth, amorphous nanotube layers.  Annealing can change the crystal form and composition of nanotubes. The nanotubes after annealing can promote osteoblast proliferation and mineralization in vitro. © 2010 John Wiley & Sons A/S.

  18. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    Science.gov (United States)

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  19. Effects of annealing on the recombination dynamics of low-temperature grown ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Hilker, B.; Bekeny, C.; Voss, T.; Gutowski, J. [IFP, Universitaet Bremen, 28334 Bremen (Germany); Hauschild, R.; Kalt, H. [Universitaet Karlsruhe, 76128 Karlsruhe (Germany); Postels, B.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, 38023 Braunschweig (Germany)

    2007-07-01

    We present systematic temperature and excitation density dependent time-resolved photoluminescence (TRPL) measurements of as-grown and annealed ZnO nanorods fabricated by an aqueous chemical growth (ACG) technique at {proportional_to}90 C. The as-grown nanorods show strong nearband-edge and rather weak deep-level emission indicating their already good optical quality. At 4K, we find a broad emission line at 3.36 eV (line width 30 meV) which we attribute to recombination from a donor band formed through the high donor concentration. After annealing in oxygen and nitrogen atmospheres at 600-800 C well-resolved and sharper excitonic transitions are observed. To understand the recombination dynamics in the nanorods we carried out TRPL measurements using a frequency-doubled femtosecond laser and a streak camera. The as-grown sample shows a very fast monoexponential decay time of {proportional_to}10ps independent of temperature and excitation density. In contrast, the annealed samples exhibit a biexponential decay. Each a fast {tau}1 and a slow {tau}2 time constant have been determined for all annealed samples both of them significantly varying depending on the annealing atmosphere and temperature. This will be discussed on the basis of a phenomenological rate-equation model.

  20. Synthesis and characterization of nickel oxide particulate annealed at different temperatures

    Science.gov (United States)

    Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

    2018-04-01

    Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

  1. Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

    Science.gov (United States)

    Krasikov, E.

    2015-04-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible.

  2. Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

    International Nuclear Information System (INIS)

    Krasikov, E

    2015-01-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation.There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment.The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. (paper)

  3. Microstructure and mechanical properties of sputter deposited Ni/Ni{sub 3}Al multilayer films at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Chao [Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center for Advanced Ship and Deep-Sea Exploration, Shanghai 200240 (China); Feng, Kai, E-mail: fengkai@sjtu.edu.cn [Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center for Advanced Ship and Deep-Sea Exploration, Shanghai 200240 (China); Li, Zhuguo, E-mail: lizg@sjtu.edu.cn [Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center for Advanced Ship and Deep-Sea Exploration, Shanghai 200240 (China); Lu, Fenggui; Huang, Jian; Wu, Yixiong [Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center for Advanced Ship and Deep-Sea Exploration, Shanghai 200240 (China)

    2016-08-15

    Highlights: • Ni/Ni{sub 3}Al multilayers are prepared by magnetron sputtering. • Both grain size and phase constitution of annealed Ni/Ni{sub 3}Al multilayers are dependent on individual layer thickness. • The hardness of annealed Ni/Ni{sub 3}Al multilayers varies with individual layer thickness and annealing temperature. • 40 nm Ni/Ni{sub 3}Al multilayer exhibits excellent hardness at elevated temperature. - Abstract: Nano-structured Ni/Ni{sub 3}Al multilayer was prepared by magnetron sputtering, with individual layer thicknesses h varying from 10 to 160 nm. The microstructure and hardness of Ni/Ni{sub 3}Al multilayer were investigated by X-ray diffraction, transmission electron microscopy and nanoindentation. The results show that the hardness increases with decreasing h for as-deposited and 500 °C annealed multilayers. When annealed at 700 °C, the hardness approach a peak value at h = 40 nm with followed by softening at smaller h. The influence of individual layer thickness, grain size as well as formation of ordered Ni{sub 3}Al on strengthening mechanisms of Ni/Ni{sub 3}Al multilayers at elevated temperature are discussed.

  4. Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

    International Nuclear Information System (INIS)

    Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

    2007-01-01

    The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

  5. Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Sheng-qing, E-mail: joy_hsq@126.com [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Peng, Kun, E-mail: kpeng@hnu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Chen, Hong [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-03-15

    Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10{sup −8} cm{sup 2} s{sup −1} and 2.4×10{sup −7} cm{sup 2} s{sup −1}, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions. - Highlights: • The optimum annealing conditions can be determined as 900 °C for 8 h. • The diffusion coefficient of Dy at 900 °Care determined to be 2.4×10{sup −7} cm{sup 2} s{sup −1}. • A maximum diffusion length of about 3 mm can be obtained.

  6. Effect of elevated temperature on the compressive strength of ...

    African Journals Online (AJOL)

    Based on results of tests, partial replacement of cement with 10 % PSMS is recommended for use in concrete production and resistance to elevated temperature. The studies show that at this replacement, the concrete compressive strength is not adversely affected when the elevated temperature reaches 500°C. Keywords: ...

  7. Upshot of Elevated Temperature on Performance Facet of Fly Ash ...

    African Journals Online (AJOL)

    This study investigates the effects of elevated temperature variation on the compressive strength of Fly Ash/Ordinary Portland Cement (OPC) Laterized concrete ... and 10% Fly ash content at 2500C. This is an indication that the strength of Fly ash/OPC Laterized concrete is generally sufficient for use at elevated temperature ...

  8. Effect of stress relief annealing temperature and atmosphere on the magnetic properties of silicon steel

    International Nuclear Information System (INIS)

    Paolinelli, Sebastiao C.; Cunha, Marco A. da

    2006-01-01

    Fully processed non-oriented silicon steel samples 0.50 mm thick were sheared and submitted to stress relief annealing under different conditions of temperature and atmosphere to investigate the effect of this treatment on the recovery of magnetic properties. Two different compositions were used, with different Si and Al contents. Temperature was varied in the range of 600-900 deg. C and four atmospheres were used: N 2 and N 2 +10%H 2 combined with dew points of -10 and 15 deg. C. The results showed that annealing atmosphere has very important effect on the magnetic properties and that the beneficial effect of stress relief annealing can be overcome by the detrimental effect of the atmosphere under certain conditions, due to oxidation and nitration

  9. Role of Annealing Temperature on Morphology of Alumina Thin Film Prepared by Wet-Chemical Method

    Directory of Open Access Journals (Sweden)

    Manju Pandey

    2015-03-01

    Full Text Available In this paper, we reported the compositional, morphological and structural properties of the alumina(Al2O3 thin films prepared by sol-gel technique and annealed between 800 0C to 1200 0C for 1-hour in an air atmosphere. The deposited films were polycrystalline in nature. Thin films were found uniform and adherent to the alumina substrate. Effect of annealing temperature on structural parameters such as pore size and surface area were calculated. The result indicates that pore size and surface area was decreased by increasing annealing temperature. The material characterization was done by field emission scanning electron microscope (SEM, atomic force microscopy (AFM and Brunaur, Emmet and Teller (BET.

  10. The influence of annealing temperature on the strength of TRISO coated particles

    Energy Technology Data Exchange (ETDEWEB)

    Rooyen, I.J. van, E-mail: Isabel.vanrooyen@pbmr.co.z [Pebble Bed Modular Reactor (Pty) Ltd., 1279 Mike Crawford Avenue, Centurion (South Africa); Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Rooyen, P.M. van [Pebble Bed Modular Reactor (Pty) Ltd., 1279 Mike Crawford Avenue, Centurion (South Africa)

    2010-07-31

    The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 {sup o}C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 {sup o}C.

  11. The influence of annealing temperature on the strength of TRISO coated particles

    International Nuclear Information System (INIS)

    Rooyen, I.J. van; Neethling, J.H.; Rooyen, P.M. van

    2010-01-01

    The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 o C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 o C.

  12. Temperature driven annealing of perforations in bicellar model membranes.

    Science.gov (United States)

    Nieh, Mu-Ping; Raghunathan, V A; Pabst, Georg; Harroun, Thad; Nagashima, Kazuomi; Morales, Hannah; Katsaras, John; Macdonald, Peter

    2011-04-19

    Bicellar model membranes composed of 1,2-dimyristoylphosphatidylcholine (DMPC) and 1,2-dihexanoylphosphatidylcholine (DHPC), with a DMPC/DHPC molar ratio of 5, and doped with the negatively charged lipid 1,2-dimyristoylphosphatidylglycerol (DMPG), at DMPG/DMPC molar ratios of 0.02 or 0.1, were examined using small angle neutron scattering (SANS), (31)P NMR, and (1)H pulsed field gradient (PFG) diffusion NMR with the goal of understanding temperature effects on the DHPC-dependent perforations in these self-assembled membrane mimetics. Over the temperature range studied via SANS (300-330 K), these bicellar lipid mixtures exhibited a well-ordered lamellar phase. The interlamellar spacing d increased with increasing temperature, in direct contrast to the decrease in d observed upon increasing temperature with otherwise identical lipid mixtures lacking DHPC. (31)P NMR measurements on magnetically aligned bicellar mixtures of identical composition indicated a progressive migration of DHPC from regions of high curvature into planar regions with increasing temperature, and in accord with the "mixed bicelle model" (Triba, M. N.; Warschawski, D. E.; Devaux, P. E. Biophys. J.2005, 88, 1887-1901). Parallel PFG diffusion NMR measurements of transbilayer water diffusion, where the observed diffusion is dependent on the fractional surface area of lamellar perforations, showed that transbilayer water diffusion decreased with increasing temperature. A model is proposed consistent with the SANS, (31)P NMR, and PFG diffusion NMR data, wherein increasing temperature drives the progressive migration of DHPC out of high-curvature regions, consequently decreasing the fractional volume of lamellar perforations, so that water occupying these perforations redistributes into the interlamellar volume, thereby increasing the interlamellar spacing. © 2011 American Chemical Society

  13. Investigation of Asphaltene Precipitation at Elevated Temperature

    DEFF Research Database (Denmark)

    Andersen, Simon Ivar; Lindeloff, Niels; Stenby, Erling Halfdan

    1998-01-01

    In order to obtain quantitative data on the asphaltene precipitation induced by the addition of n-alkane (heptane) at temperatures above the normal boiling point of the precipitant, a high temperature/high pressure filtration apparatus has been constructed. Oil and alkane are mixed...

  14. Aluminium sheet forming at elevated temperatures

    NARCIS (Netherlands)

    van den Boogaard, Antonius H.; Bolt, P.J.; Werkhoven, R.J.

    2001-01-01

    The formability of aluminum sheet depends on the temperature of the material and the strain rate. E.g. the limiting drawing ratio can be improved by increasing the temperature uniformly, but even more by heating the flange and cooling the punch. To accurately simulate the deep drawing or stretching

  15. THE RETENTION OF KRYPTON IN POLYCRYSTALLINE SILICON DURING HIGH-TEMPERATURE ANNEALING

    NARCIS (Netherlands)

    GREUTER, MJW; NIESEN, L; VANVEEN, A; EVANS, JH

    1994-01-01

    In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert

  16. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  17. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    In electrical characterization as well, when annealing temperature was increased .... of ZnO (002) peaks and (c) crystallite size and stress generation on ZnO thin films ... sufficient kinetic energy and surface mobility to occupy stable positions ...

  18. Coalescence aspects of cobalt nanoparticles during in situ high-temperature annealing

    NARCIS (Netherlands)

    Palasantzas, G; Vystavel, T; Koch, SA; De Hosson, JTM

    2006-01-01

    In this work we investigate the coalescence aspects of Co nanoparticles. It was observed that nanoparticles in contact with the substrate are relatively immobile, whereas those on top of other Co particles can rearrange themselves during high-temperature annealing and further coalesce. Indeed,

  19. Radiation annealing mechanisms of low-alloy reactor pressure vessel steels dependent on irradiation temperature and neutron fluence

    International Nuclear Information System (INIS)

    Pachur, D.

    1982-01-01

    Heat treatment after irradiation of reactor pressure vessel steels showed annealing of irradiation embrittlement. Depending on the irradiation temperature, the embrittlement started to anneal at about 220 0 C and was completely annealed at 500 0 C with 4 h of annealing time. The annealing behavior was normally measured in terms of the Vickers hardness increase produced by irradiation relative to the initial hardness as a function of the annealing temperature. Annealing results of other mechanical properties correspond to hardness results. During annealing, various recovery mechanisms occur in different temperature ranges. These are characterized by activation energies from 1.5 to 2.1 eV. The individual mechanisms were determined by the different time dependencies at various temperatures. The relative contributions of the mechanisms showed a neutron fluence dependence, with the lower activation energy mechanisms being predominant at low fluence and vice versa. In the temperature range where partial annealing of a mechanism took place during irradiation, an increase in activation energy was observed. Trend curves for the increase in transition temperature with irradiation, for the relative increase of Vickers hardness and yield strength, and for the relative decrease of Charpy-V upper shelf energy are interpreted by the behavior of different mechanisms

  20. Effect of working pressure and annealing temperature on ...

    Indian Academy of Sciences (India)

    roughness was found at higher temperatures as a result of a more heterogeneous growth and less tensions. Keywords. Barium strontium titanate; thin film; pulsed laser deposition; ferroelectric. 1. Introduction. Perovskite barium strontium titanate (BST) thin films are promising candidates for dynamic random access memory.

  1. Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena

    International Nuclear Information System (INIS)

    Chabrerie, C.; Autran, J.L.; Paillet, P.; Flament, O.; Leray, J.L.; Boudenot, J.C.

    1997-01-01

    In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e., arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed

  2. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    Science.gov (United States)

    Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

    2014-02-01

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  3. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Vinattieri, A.; Batignani, F. [Dipartimento di Fisica e Astronomia, LENS, CNISM, Università di Firenze (Italy); Bogani, F. [Dipartimento di Ingegneria Industriale, Università di Firenze (Italy); Meneghini, M.; Meneghesso, G.; Zanoni, E. [Dipartimento di Ingegneria dell' Informazione, Università di Padova (Italy); Zhu, D.; Humphreys, C. J. [Department Materials Science, University of Cambridge, Cambridge, CB2 3QZ (United Kingdom)

    2014-02-21

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  4. The annealing of phosphorus-implanted silicon investigated at low temperatures

    International Nuclear Information System (INIS)

    Wagner, C.; Burkhardt, F.

    1978-01-01

    Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

  5. Carbon implantation into tungsten at elevated temperatures

    International Nuclear Information System (INIS)

    Eckstein, W.; Shulga, V.I.; Roth, J.

    1999-01-01

    The bombardment of W with 2.4 keV C at normal incidence in the temperature range between 293 and 973 K is investigated experimentally and by computer simulation. At room temperature the measured weight is at first increasing but then changing to a weight gain with the incident C fluence. This weight gain is reduced at temperatures above 750 K, and at 973 K a constant weight loss is observed. The computing approach was to couple the dynamic Monte Carlo program TRIDYN with the diffusion program PIDAT. Input data for C diffusion in W are taken from the literature. Agreement between experimental data and computed results can be achieved at temperatures around 800 K by using a smaller diffusion coefficient in the simulations than those found in the literature

  6. Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

    2013-12-01

    The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

  7. Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

    2017-12-01

    The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

  8. Effect of annealing temperature on the electrical transport properties of CaRuO3-δ thin films directly deposited on the Si substrate

    International Nuclear Information System (INIS)

    Paik, Hanjong; Kim, Youngha; No, Kwangsoo; Cann, David P.; Yoon, DongJoo; Kim, ByungIl; Kim, Yangsoo

    2007-01-01

    We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO 3-δ (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru 4+ /Ca 2+ ion were responsible for the transport properties of CRO thin film. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Influences of annealing temperature on sprayed CuFeO2 thin films

    Science.gov (United States)

    Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

    2018-06-01

    Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

  10. Physical properties of Fe doped In_2O_3 magnetic semiconductor annealed in hydrogen at different temperature

    International Nuclear Information System (INIS)

    Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Chen, S.K.; Lim, K.P.; Kechik, M.M. Awang

    2016-01-01

    The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In_2_−_xFe_xO_3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In_2O_3 phase structure when annealed in hydrogen at 300–500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In_2O_3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×10"1"9 cm"−"3, while film annealed at 500 °C has both good electrical (ρ=0.05 Ω.cm and n=2.2×10"1"9 cm"−"3) and magnetic properties, Ms=21 emu/cm"-"3. - Highlights: • Physical properties of films were sensitive to hydrogen-annealing temperature. • Magnetisation, Ms, of films increased with increase of hydrogen annealing temperature. • Film annealed in hydrogen at 300 °C has the lowest resistivity, ρ=0.03 Ω cm. • Film annealed in hydrogen at 600 °C has highest magnetisation, Ms=30 emu/cm"3.

  11. Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation

    International Nuclear Information System (INIS)

    Mogro-Campero, A.; Love, R.P.; Chang, M.F.; Dyer, R.F.

    1987-01-01

    Localized lifetime control by proton implantation can result in a considerable improvement (as much as an order of magnitude or more) in the trade-off between device turn-off time and forward voltage when compared with the unlocalized method of electron irradiation. The physical mechanisms responsible for the qualitative temperature dependences are identified: MOS channel resistance for forward voltage, carrier capture cross-section for turn-off time, and generation and diffusion components of leakage current. Since no catastrophic or unrecoverable behavior is observed, normal device operation within the tested temperature range is possible. Isothermal annealing curves of turn-off time measured after annealing, and corresponding to a few hours annealing time, reveal that a constant turn-off time is reached after about an hour. The constant value increases with temperature, but is still below the unimplanted value after 4 h at 525 0 C. The turn-off time was verified to be constant even after 24 h of annealing at 200 0 C. Lifetime control by proton implantation seems to be more thermally stable than that caused by electron irradiation. (author)

  12. Effect of annealing temperature on the anatase and rutile TiO2 nano tubes formation

    International Nuclear Information System (INIS)

    Zainovia Lockman; Kit, C.H.; Srimala Sreekantan

    2009-01-01

    Herein, we report on the optimum condition for TiO 2 titania nano tubes formation and the effect of annealing on the formation of anatse and rutile titania. Anodic oxidation was carried out in two electrodes bath consisting of 5 wt % NH 4 F ions. The anode was a 0.1 mm thick Ti foil and the cathode was Pt electrode. Anodization was conducted at 20 V. The anodised foils were subjected to morphological and structural characterizations. As-anodised foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, x-ray diffraction analysis revealed the presence of (101) anatase at annealing temperature from 400 - 500 degree Celsius. This indicates that the transformation occurs at this range of temperatures. Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 degree Celsius. At above 600 degree Celsius, x-ray diffraction pattern shows a peak belonging to the rutile peak. Transformation from anatase to rutile is thought to occur at about 500 degree Celsius with a more complete transformation at higher temperature. Annealing at higher than 600 degree Celsius induces thickening of the nano tubes wall and at above 700 degree Celsius, the nano tubes structure has completely disappeared. (author)

  13. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyunpil Boo

    2012-01-01

    Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

  14. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    International Nuclear Information System (INIS)

    Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

    2005-01-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

  15. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  16. Electrically-inactive phosphorus re-distribution during low temperature annealing

    Science.gov (United States)

    Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

    2018-04-01

    An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

  17. Arsenite adsorption on goethite at elevated temperatures

    International Nuclear Information System (INIS)

    Kersten, Michael; Vlasova, Nataliya

    2009-01-01

    Experimental closed-system ΔT acid-base titrations between 10 deg. C and 75 deg. C were used to constrain a temperature-dependent 1-pK basic Stern model of the goethite surface complexation reactions. Experimental data for the temperature dependence of pH PZC determined by the one-term Van't Hoff extrapolation yield a value for goethite surface protonation enthalpy of -49.6 kJ mol -1 in good agreement with literature data. Batch titration data between 10 deg. C and 75 deg. C with arsenite concentrations between 10 μM and 100 μM yield adsorption curves, which increases with pH, peak at a pH of 9, and decrease at higher pH values. The slope of this bend becomes steeper with increasing temperature. A 1-pK charge distribution model in combination with a basic Stern layer option could be established for the pH-dependent arsenite adsorption. Formation of two inner-sphere bidentate surface complexes best matched the experimental data in agreement with published EXAFS spectroscopic information. The temperature behaviour of the thus derived intrinsic equilibrium constants can be well represented by the linear Van't Hoff logK T int vs. 1/T plot. Adsorption of arsenite on the goethite surface is exothermic (negative Δ r H 298 values) and therefore becomes weaker with increasing temperature. Application of the new constants with the aqueous speciation code VMINTEQ predicts that the As(III) concentration in presence of goethite sorbent decreases by 10 times once the hydrothermal solution is cooled from 99 deg. C to 1 deg. C. The model curve matches data from a natural thermal water spring system. The increase of adsorption efficiency for As along the temperature gradient may well serve as an additional process to prevent ecosystem contamination by As-rich water seepage from geothermal energy generation facilities

  18. Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

    Science.gov (United States)

    Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

    2015-03-01

    In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

  19. Effects of Elevated Temperature on Compressive Strength Of Concrete

    African Journals Online (AJOL)

    This study presents the results of investigation of the effects of elevated temperatures on the compressive strength of Grade 40 concrete. A total of thirty cube specimens were cast, cured in water at ambient temperature in the laboratory and subjected to various temperature regimes before testing. A concrete mix of 1:1:3 ...

  20. Arsenite adsorption on goethite at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kersten, Michael [Environmental Geochemistry Group, Institute of Geosciences, Johannes Gutenberg-University, Mainz 55099 (Germany)], E-mail: kersten@uni-mainz.de; Vlasova, Nataliya [Environmental Geochemistry Group, Institute of Geosciences, Johannes Gutenberg-University, Mainz 55099 (Germany)

    2009-01-15

    Experimental closed-system {delta}T acid-base titrations between 10 deg. C and 75 deg. C were used to constrain a temperature-dependent 1-pK basic Stern model of the goethite surface complexation reactions. Experimental data for the temperature dependence of pH{sub PZC} determined by the one-term Van't Hoff extrapolation yield a value for goethite surface protonation enthalpy of -49.6 kJ mol{sup -1} in good agreement with literature data. Batch titration data between 10 deg. C and 75 deg. C with arsenite concentrations between 10 {mu}M and 100 {mu}M yield adsorption curves, which increases with pH, peak at a pH of 9, and decrease at higher pH values. The slope of this bend becomes steeper with increasing temperature. A 1-pK charge distribution model in combination with a basic Stern layer option could be established for the pH-dependent arsenite adsorption. Formation of two inner-sphere bidentate surface complexes best matched the experimental data in agreement with published EXAFS spectroscopic information. The temperature behaviour of the thus derived intrinsic equilibrium constants can be well represented by the linear Van't Hoff logK{sub T}{sup int} vs. 1/T plot. Adsorption of arsenite on the goethite surface is exothermic (negative {delta}{sub r}H{sub 298} values) and therefore becomes weaker with increasing temperature. Application of the new constants with the aqueous speciation code VMINTEQ predicts that the As(III) concentration in presence of goethite sorbent decreases by 10 times once the hydrothermal solution is cooled from 99 deg. C to 1 deg. C. The model curve matches data from a natural thermal water spring system. The increase of adsorption efficiency for As along the temperature gradient may well serve as an additional process to prevent ecosystem contamination by As-rich water seepage from geothermal energy generation facilities.

  1. Elevated temperature grouts and radioactive waste inventory

    International Nuclear Information System (INIS)

    Constable, M.; Fenton, A.; Lee, D.J.; Jones, D.V.C.; Wilding, C.R.

    1990-01-01

    The objective of this year's programme was to quantify the total volumes of cementitious immobilising material required to package radioactive waste arisings in the UK to 2010. These data form the basis for selection of cementitious matrices for further investigation of storage at likely repository temperatures, including the effect of γ irradiation and resaturation to determine their effects on the physical and chemical performance of the cement systems. (Author)

  2. effect of elevated temperature on the compressive strength

    African Journals Online (AJOL)

    HOD

    reducing cost whilst maintaining structural integrity. [1–4].The solid ... density and surface appearance are affected by temperature .... Table 1: Physical properties of Sand, Granite, cement .... The relationship between weight loss and elevated.

  3. The effects of annealing temperature on the permittivity and electromagnetic attenuation performance of reduced graphene oxide

    Science.gov (United States)

    Wu, Fan; Zeng, Qiao; Xia, Yilu; Sun, Mengxiao; Xie, Aming

    2018-05-01

    Reduced graphene oxide (RGO) has been prepared through the thermal reduction method with different annealing temperatures to explore the effects of temperature on the permittivity and electromagnetic attenuation performance. The real and imaginary parts of permittivity increase along with the decrease in the oxygen functional group and the increase in the filler loading ratio. A composite only loaded with 1 wt. % of RGO can possess an effective electromagnetic absorption bandwidth of 7.60 GHz, when graphene oxide was reduced under 300 °C for 2 h. With the annealing temperature increased to 700 °C and the well reduced RGO loaded 7 wt. % in the composite, the electromagnetic interference shielding efficiency can get higher than 35 dB from 2 to 18 GHz. This study shows that controlling the oxygen functional groups on the RGO surface can also obtain an ideal electromagnetic attenuation performance without any other decorated nanomaterials.

  4. Temperature dependence of radiation colloidal centers production and annealing in alkali halide crystals

    International Nuclear Information System (INIS)

    Kristapson, J.Z.; Ozerskii, V.J.

    1981-01-01

    The investigation results on temperature dependences of production and annealing of radiation colloidal color centers have been reviewed. In order to produce such centers in NaCl, KCl and KBr crystals the doses of 10 2 -10 4 Mrad as well as irradiation temperatures of 300-600 K and post-irradiation heating of up to 800 K were applied. It has been demonstrated that to produce X-centers, it is necessary to have optimal temperature and initial critical dose during both irradiation and post-irradiation heating of crystals. It has been also found that during annealing hole centers produced are different with regard to thermal stability. The possible recombination mechanisms of hole and electron products of radiolysis during post-irradiation heating has been analyzed [ru

  5. Annealing temperature effect on electrical properties of MEH-PPV thin film via spin coating method

    Science.gov (United States)

    Azhar, N. E. A.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Organic semiconductor has been discovered in different application devices such as organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2' -ethylhexyloxy)-1, 4-phenylenevinylene), MEH-PPV widely used in this device because its ability to produce a good optical quality films. The MEH-PPV was prepared on glass substrate by spin coating method. The thin film was investigated at different annealing temperatures. The scanning electron micrographs (SEM) revealed that sample annealed at 50°C showed uniformity and less aggregation on morphology polymer thin film. Optical properties showed the intensities of visible emission increased as temperatures increased. The current-voltage (I-V) measurement revealed that the temperature of 50°C showed high conductive and it is suitable for optoelectronic device.

  6. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    Institute of Scientific and Technical Information of China (English)

    ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

    2012-01-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

  7. Effect of annealing temperature on the crystalline quality and phase transformation of chemically deposited CdSe films

    International Nuclear Information System (INIS)

    Zapata-Torres, M.; Chale-Lara, F.; Caballero-Briones, F.; Calzadilla, O.

    2005-01-01

    Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50 C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60 C and 300 C. For annealing temperatures higher than 300 C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300 C and 500 C with 50 intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300 C. For temperatures between 300 C and 450 C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500 C we obtain only the hexagonal phase. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. An investigation of temperature measurement methods in nuclear power plant reactor pressure vessel annealing

    International Nuclear Information System (INIS)

    Acton, R.U.; Gill, W.; Sais, D.J.; Schulze, D.H.; Nakos, J.T.

    1996-05-01

    The objective of this project was to provide an assessment of several methods by which the temperature of a commercial nuclear power plant reactor pressure vessel (RPV) could be measured during an annealing process. This project was a coordinated effort between DOE's Office of Nuclear Energy, Science and Technology; DOE's Light Water Reactor Technology Center at Sandia National Laboratories; and the Electric Power Research Institute's Non- Destructive Evaluation Center. Ball- thermocouple probes similar to those described in NUREG/CR-5760, spring-loaded, metal- sheathed thermocouple probes, and 1778 air- suspended thermocouples were investigated in experiments that heated a section of an RPV wall to simulate a thermal annealing treatment. A parametric study of ball material, emissivity, thermal conductivity, and thermocouple function locations was conducted. Also investigated was a sheathed thermocouple failure mode known as shunting (electrical breakdown of insulation separating the thermocouple wires). Large errors were found between the temperature as measured by the probes and the true RPV wall temperature during heat-up and cool-down. At the annealing soak temperature, in this case 454 degrees C [850'F], all sensors measured the same temperature within about ±5% (23.6 degrees C [42.5 degrees F]). Because of these errors, actual RPV wall heating and cooling rates differed from those prescribed (by up to 29%). Shunting does not appear to be a problem under these conditions. The large temperature measurement errors led to the development of a thermal model that predicts the RPV wall temperature from the temperature of a ball- probe. Comparisons between the model and the experimental data for ball-probes indicate that the model could be a useful tool in predicting the actual RPV temperature based on the indicated ball- probe temperature. The model does not predict the temperature as well for the spring-loaded and air suspended probes

  9. Structural analysis for elevated temperature design of the LMFBR

    International Nuclear Information System (INIS)

    Griffin, D.S.

    1976-02-01

    In the structural design of LMFBR components for elevated temperature service it is necessary to take account of the time-dependent, creep behavior of materials. The accommodation of creep to assure design reliability has required (1) development of new design limits and criteria, (2) development of more detailed representations of material behavior, and (3) application of the most advanced analysis techniques. These developments are summarized and examples are given to illustrate the current state of technology in elevated temperature design

  10. Hypercoagulability in response to elevated body temperature and central hypovolemia

    DEFF Research Database (Denmark)

    Meyer, Martin; Ostrowski, Sisse R; Overgaard, Flemming Anders

    2013-01-01

    Coagulation abnormalities contribute to poor outcomes in critically ill patients. In trauma patients exposed to a hot environment, a systemic inflammatory response syndrome, elevated body temperature, and reduced central blood volume occur in parallel with changes in hemostasis and endothelial...... damage. The objective of this study was to evaluate whether experimentally elevated body temperature and reduced central blood volume (CBV) per se affects hemostasis and endothelial activation....

  11. Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

    2016-03-31

    Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

  12. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1992-05-01

    High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

  13. Impact of Annealing Temperature on the Physical Properties of the Lanthanum Deficiency Manganites

    Directory of Open Access Journals (Sweden)

    Skini Ridha

    2017-10-01

    Full Text Available The lanthanum deficiency manganites La0.8-x□xCa0.2MnO3 (x = 0, 0.1 and 0.2, where □ is a lanthanum vacancy, were prepared using the classic ceramic methods with different thermal treatments (1373 K and 973 K. The structural, magnetic, and magnetocaloric properties of these compounds were studied as a function of annealing temperature. It was noted that the annealing temperature did not affect the crystal structure of our samples (orthorhombic structure with Pnma space group. Nevertheless, a change in the variation of the unit cell volume V, the average bond length dMn–O, and the average bond angles θMn–O–Mn were observed. Magnetization versus temperature study has shown that all samples exhibited a magnetic transition from ferromagnetic (FM to paramagnetic (PM phase with increasing temperature. However, it can be clearly seen that the annealing at 973 K induced an increase of the magnetization. In addition, the magnetocaloric effect (MCE as well as the relative cooling power (RCP were estimated. As an important result, the values of MCE and RCP in our Lanthanum-deficiency manganites are reported to be near to those found in gadolinium, considered as magnetocaloric reference material.

  14. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  15. Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

    International Nuclear Information System (INIS)

    Garcia-Torres, Jose; Valles, Elisa; Gomez, Elvira

    2010-01-01

    The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR(H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

  16. Effect of the Annealing Temperature on the Structure and Magnetic Properties of 2% Si Steel

    Directory of Open Access Journals (Sweden)

    Cunha Marco A. da

    2002-01-01

    Full Text Available To study the effect of the annealing temperature on the structure and magnetic properties of a 2%Si non-oriented steel cold rolled samples were submitted to final annealing in the temperature range of 540 °C to 980 °C in hydrogen atmosphere. The samples had received cold rolling reduction of 75% to a final thickness of 0.50 mm. Recovery and recrystallization resulted in significant improvement of magnetic properties, with decrease of iron loss (W1.5 and increase of polarisation (J50 and relative permeability (µ1.5. On further grain growth, after recrystallization, there was simultaneous decrease of iron loss, polarisation and relative permeability. Texture evolution on grain growth accounts for the observed decrease of J50 and µ1.5. The beneficial effect of increasing grain size on core loss overcomes the detrimental effect of texture resulting in decrease of W1.5.

  17. Effect of Mn Content and Solution Annealing Temperature on the Corrosion Resistance of Stainless Steel Alloys

    Directory of Open Access Journals (Sweden)

    Ihsan-ul-Haq Toor

    2014-01-01

    Full Text Available The corrosion behavior of two specially designed austenitic stainless steels (SSs having different Nickel (Ni and Manganese (Mn contents was investigated. Prior to electrochemical tests, SS alloys were solution-annealed at two different temperatures, that is, at 1030°C for 2 h and 1050°C for 0.5 h. Potentiodynamic polarization (PD tests were carried out in chloride and acidic chloride, whereas linear polarization resistance (LPR and electrochemical impedance spectroscopy (EIS was performed in 0.5 M NaCl solution at room temperature. SEM/EDS investigations were carried out to study the microstructure and types of inclusions present in these alloys. Experimental results suggested that the alloy with highest Ni content and annealed at 1050°C/0.5 hr has the highest corrosion resistance.

  18. Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

    Science.gov (United States)

    Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

    2017-09-20

    Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

  19. Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

    Science.gov (United States)

    Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

    2018-06-01

    In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

  20. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    International Nuclear Information System (INIS)

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-01-01

    In the present study, effect of solution annealing temperature (1050 °C and 1100 °C) and isothermal ageing (700 °C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel (∼ 45% ferrite and ∼ 55% austenite) undergoes a series of metallurgical transformations during ageing—formation of secondary austenite (γ 2 ) and precipitation of Cr and Mo rich intermetallic (chi-χ and sigma-σ) phases. For solution annealing at 1050 °C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 °C. χ Phase precipitated after the precipitation of carbides—preferentially at the ferrite–ferrite and also at the ferrite–austenite boundaries. σ Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 °C was found to be carbides → χ → σ. On the contrary, for samples solution annealed at 1100 °C, the precipitation of χ phase was negligible. χ Phase precipitated before σ phase, preferentially along the ferrite–ferrite grain boundaries and was later consumed in the σ phase precipitation. The σ phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite γ 2 and σ phase in the ferrite and along the ferrite–austenite grain boundaries. An increase in the volume fraction of γ 2 and σ phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights: ► Effect of solution annealing temperature on microstructural evolution is studied. ► χ Phase precipitated preferentially in the samples solution annealed at

  1. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwar, A., E-mail: akashiwar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Vennela, N. Phani, E-mail: phanivennela@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Kamath, S.L., E-mail: kamath@iitb.ac.in [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Powai, Mumbai-400076, Maharashtra (India); Khatirkar, R.K., E-mail: rajesh.khatirkar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India)

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  2. Plastic responses to elevated temperature in low and high elevation populations of three grassland species.

    Science.gov (United States)

    Frei, Esther R; Ghazoul, Jaboury; Pluess, Andrea R

    2014-01-01

    Local persistence of plant species in the face of climate change is largely mediated by genetic adaptation and phenotypic plasticity. In species with a wide altitudinal range, population responses to global warming are likely to differ at contrasting elevations. In controlled climate chambers, we investigated the responses of low and high elevation populations (1200 and 1800 m a.s.l.) of three nutrient-poor grassland species, Trifolium montanum, Ranunculus bulbosus, and Briza media, to ambient and elevated temperature. We measured growth-related, reproductive and phenological traits, evaluated differences in trait plasticity and examined whether trait values or plasticities were positively related to approximate fitness and thus under selection. Elevated temperature induced plastic responses in several growth-related traits of all three species. Although flowering phenology was advanced in T. montanum and R. bulbosus, number of flowers and reproductive allocation were not increased under elevated temperature. Plasticity differed between low and high elevation populations only in leaf traits of T. montanum and B. media. Some growth-related and phenological traits were under selection. Moreover, plasticities were not correlated with approximate fitness indicating selectively neutral plastic responses to elevated temperature. The observed plasticity in growth-related and phenological traits, albeit variable among species, suggests that plasticity is an important mechanism in mediating plant responses to elevated temperature. However, the capacity of species to respond to climate change through phenotypic plasticity is limited suggesting that the species additionally need evolutionary adaptation to adjust to climate change. The observed selection on several growth-related and phenological traits indicates that the study species have the potential for future evolution in the context of a warming climate.

  3. Emission properties of MEH-PPV in thin films simultaneously illuminated and annealed at different temperatures

    KAUST Repository

    Botiz, Ioan; Freyberg, Paul; Leordean, Cosmin; Gabudean, Ana-Maria; Astilean, Simion; Yang, Arnold Chang-Mou; Stingelin, Natalie

    2015-01-01

    © 2014 Elsevier B.V. All rights reserved. We report on the enhancement of photoluminescence in thin films of poly[2-methoxy-5-((2′-ethylhexyl)oxy)-1,4-phenylenvinylene], neat or embedded in polystyrene, upon illumination with light as a function of annealing temperature, with our data emphasizing the picture of a light-induced conformation change that leads to the altered photophysical response of this polymer.

  4. Modelling of aluminium sheet forming at elevated temperatures

    NARCIS (Netherlands)

    van den Boogaard, Antonius H.; Huetink, Han

    2004-01-01

    The formability of Al–Mg sheet can be improved considerably, by increasing the temperature. By heating the sheet in areas with large shear strains, but cooling it on places where the risk of necking is high, the limiting drawing ratio can be increased to values above 2.5. At elevated temperatures,

  5. A material model for aluminium sheet forming at elevated temperatures

    NARCIS (Netherlands)

    van den Boogaard, Antonius H.; Werkhoven, R.J.; Bolt, P.J.

    2001-01-01

    In order to accurately simulate the deep drawing or stretching of aluminum sheet at elevated temperatures, a model is required that incorporates the temperature and strain-rate dependency of the material. In this paper two models are compared: a phenomenological material model in which the

  6. Experiment and calculation of reinforced concrete at elevated temperatures

    CERN Document Server

    Guo, Zhenhai

    2011-01-01

    Concrete as a construction material goes through both physical and chemical changes under extreme elevated temperatures. As one of the most widely used building materials, it is important that both engineers and architects are able to understand and predict its behavior in under extreme heat conditions. Brief and readable, this book provides the tools and techniques to properly analysis the effects of high temperature of reinforced concrete which will lead to more stable, safer structures. Based on years of the author's research, Reinforced Concrete at Elevated Temperatures four par

  7. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  8. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  9. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    International Nuclear Information System (INIS)

    Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  10. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings

    Science.gov (United States)

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-01-01

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr2N, (CrAl)2N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr2N and (CrAl)2N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness. PMID:28811440

  11. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings.

    Science.gov (United States)

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-08-07

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr₂N, (CrAl)₂N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr₂N and (CrAl)₂N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness.

  12. Ultrasonic Resonance of Metallic Spheres at Elevated Temperatures

    OpenAIRE

    Johnson , W.

    1996-01-01

    A unique ultrasonic system has been constructed for measuring resonant frequencies and damping of metallic spheres at elevated temperatures. This system employs electromagnetic-acoustic transduction, with a solenoid coil surrounding the sphere in a uniform magnetic field. Temperature is measured with an optical pyrometer. Since the acoustic and temperature measurements are noncontacting, the uncertainties associated with external damping are relatively small. The resonant frequency and Q of t...

  13. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    Science.gov (United States)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

    2015-02-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

  14. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Mustafa, M. K.

    2015-01-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ∼ 0.26× 10 11 cm −2 ) and dome-shape morphologies with relatively high density ∼ 0.92 × 10 11 cm −2 , respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ∼ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO 2 or GeO x and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge–Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. (paper)

  15. The origin of the coercivity reduction of Nd–Fe–B sintered magnet annealed below an optimal temperature

    International Nuclear Information System (INIS)

    Akiya, T.; Sasaki, T.T.; Ohkubo, T.; Une, Y.; Sagawa, M.; Kato, H.; Hono, K.

    2013-01-01

    In order to understand the origin of the coercivity reduction in a sintered Nd–Fe–B magnet that is annealed below an optimal annealing temperature, we performed focused ion beam/scanning electron microscopy tomography of post-sinter annealed magnets. A number of grain boundary cracks were observed between Nd 2 Fe 14 B grains and Nd-rich phases in the sample annealed below the optimal temperature. We deduced micromagnetic parameters α and N eff by fitting the temperature dependence of the coercivity. While α was constant regardless of the annealing conditions, N eff increased in the sample annealed below the optimal temperature with the reduced coercivity. This indicates that the reduction of the coercivity is due to the local stray field at the cracks. - Highlights: • We performed FIB/SEM tomography of post-sinter annealed magnets. • A number of grain boundary cracks were observed in the low-coercivity sample. • Parameters α and N eff were deduced from the temperature dependence of coercivity. • While α was constant, N eff increased in the low-coercivity sample. • The reduction of the coercivity is due to the local stray field at the cracks

  16. Effect of annealing temperature and dopant concentration on the thermoluminescence sensitivity in LiF:Mg,Cu,Ag material.

    Science.gov (United States)

    Yahyaabadi, Akram; Torkzadeh, Falamarz; Rezaei Ochbelagh, Dariush; Hosseini Pooya, Seyed Mahdi

    2018-04-24

    LiF:Mg,Cu,Ag is a new dosimetry material that is similar to LiF:Mg,Cu,P in terms of dosimetric properties. The effect of the annealing temperature in the range of 200 to 350°C on the thermoluminescence (TL) sensitivity and the glow curve structure of this material at different concentrations of silver (Ag) was investigated. It has been demonstrated that the optimum values of the annealing temperature and the Ag concentration are 240°C and 0.1 mol% for better sensitivity, respectively. The TL intensity decreases at annealing temperatures lower than 240°C or higher than 240°C, reaching a minimum at 300°C and then again increases for various Ag concentrations. It was observed that the glow curve structure altered and the area under the low temperature peak as well as the area under the main dosimetric peak decreased with increasing annealing temperature. The position of the main dosimetric peak moved in the direction of higher temperatures, but at 320 and 350°C annealing temperatures, it shifted to lower temperatures. It was also observed that the TL sensitivity could partially be recovered by a combined annealing procedure. Copyright © 2018 John Wiley & Sons, Ltd.

  17. Annealing temperature dependent reversible wettability switching of micro/nano structured ZnO superhydrophobic surfaces

    Science.gov (United States)

    Velayi, Elmira; Norouzbeigi, Reza

    2018-05-01

    Superhydrophobic ZnO surfaces with reversibly tunable wettability were fabricated on stainless steel meshes via a facile chemical bath deposition method just by regulating the micro/nano structured ZnO needles without using chemical post modifications. The obtained surfaces can be easily and reversibly switched between superhydrophobic and superhydrophilic/underwater superoleophobic characteristics by altering the annealing temperatures. As-prepared sample exhibited long-term superhydrophobic properties with a water contact angle (WCA) of 163.8° ± 1.8° and contact angle hysteresis (CAH) of 1.1° ± 0.8°. The SEM, XRD, XPS and Raman analyses were employed to characterize the morphological features and surface chemistry of the prepared samples. SEM images showed the formation of ZnO micro/nanoneedles with a diameter of ∼90 nm on the substrate. The superhydrophobic ZnO surface was switched to highly hydrophilic and underwater superoleophobic properties with an oil contact angle (OCA) of about 172.5° after being annealed at 400 °C in air for 30 min and restored to superhydrophobic state again by altering the annealing temperature to 150 °C. Mechanical durability of the ZnO superhydrophobic surface was tested by an abrasion test. Results confirmed that the prepared surface exhibited an excellent robustness after 20 abrasion cycles under the pressure of 4.7 kPa.

  18. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  19. Structural analysis of as-deposited and annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1993-04-01

    The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

  20. Room-temperature annealing of Si implantation damage in InP

    International Nuclear Information System (INIS)

    Akano, U.G.; Mitchell, I.V.

    1991-01-01

    Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

  1. Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

    Science.gov (United States)

    Brucker, G. J.

    1971-01-01

    The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

  2. Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Jianping Li

    2017-06-01

    Full Text Available SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

  3. W nano-fuzzes: A metastable state formed due to large-flux He{sup +} irradiation at an elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yunfeng; Liu, Lu; Lu, Bing; Ni, Weiyuan; Liu, Dongping, E-mail: dongping.liu@dlnu.edu.cn

    2016-12-15

    W nano-fuzzes have been formed due to the large-flux and low-energy (200eV) He{sup +} irradiation at W surface temperature of 1480 °C. Microscopic evolution of W nano-fuzzes during annealing or low-energy (200 eV) He{sup +} bombardments has been observed using scanning electron microscopy and thermal desorption spectroscopy. Our measurements show that both annealing and He{sup +} bombardments can significantly alter the structure of W nano-fuzzes. W nano-fuzzes are thermally unstable due to the He release during annealing, and they are easily sputtered during He{sup +} bombardments. The current study shows that W nano-fuzzes act as a metastable state during low-energy and large-flux He{sup +} irradiation at an elevated temperature. - Highlights: • W nano-fuzzes microscopic evolution during annealing or He{sup +} irradiated have been measured. • W nano-fuzzes are thermally unstable due to He release during annealing. • He are released from the top layer of W fuzzes by annealing. • Metastable W nano-fuzzes are formed due to He{sup +} irradiation at an elevated temperature.

  4. Effect of Annealing Temperature on the Ballistic Limit Velocity of Ti-6A1-4V ELI

    National Research Council Canada - National Science Library

    Burkins, M

    1997-01-01

    .... Army Research Laboratory (ARL) and the RMI Titanium Company (RMI) performed a joint research program to evaluate the effect of annealing temperature on Ti-6A1-4V alloy, extra-low interstitial (ELI...

  5. Elevated temperature drives kelp microbiome dysbiosis, while elevated carbon dioxide induces water microbiome disruption.

    Directory of Open Access Journals (Sweden)

    Jeremiah J Minich

    Full Text Available Global climate change includes rising temperatures and increased pCO2 concentrations in the ocean, with potential deleterious impacts on marine organisms. In this case study we conducted a four-week climate change incubation experiment, and tested the independent and combined effects of increased temperature and partial pressure of carbon dioxide (pCO2, on the microbiomes of a foundation species, the giant kelp Macrocystis pyrifera, and the surrounding water column. The water and kelp microbiome responded differently to each of the climate stressors. In the water microbiome, each condition caused an increase in a distinct microbial order, whereas the kelp microbiome exhibited a reduction in the dominant kelp-associated order, Alteromondales. The water column microbiomes were most disrupted by elevated pCO2, with a 7.3 fold increase in Rhizobiales. The kelp microbiome was most influenced by elevated temperature and elevated temperature in combination with elevated pCO2. Kelp growth was negatively associated with elevated temperature, and the kelp microbiome showed a 5.3 fold increase Flavobacteriales and a 2.2 fold increase alginate degrading enzymes and sulfated polysaccharides. In contrast, kelp growth was positively associated with the combination of high temperature and high pCO2 'future conditions', with a 12.5 fold increase in Planctomycetales and 4.8 fold increase in Rhodobacteriales. Therefore, the water and kelp microbiomes acted as distinct communities, where the kelp was stabilizing the microbiome under changing pCO2 conditions, but lost control at high temperature. Under future conditions, a new equilibrium between the kelp and the microbiome was potentially reached, where the kelp grew rapidly and the commensal microbes responded to an increase in mucus production.

  6. Texture development in Al-Mg alloys during high temperature annealing

    International Nuclear Information System (INIS)

    Saitou, T.; Inagaki, H.

    2001-01-01

    To clarify the effect of Mg content on annealing textures developed in Al-Mg alloys during high temperature annealing, Al-Mg alloys containing up to 9 wt.% Mg in supersaturated solid solution were cold rolled 95% and isothermally annealed at 450 C. Their textures were investigated with the orientation distribution function analysis. It was found that, in the recrystallization textures observed at complete recrystallization, addition of more than 1 wt.% Mg was sufficient to suppress the development of {100} left angle 001 right angle. With increasing Mg content, {100} left angle 001 right angle decreased remarkably, whereas {100} left angle 013 right angle and {103} left angle 321 right angle increased. Thus, {100} left angle 013 right angle and {103} left angle 321 right angle were found to be the main orientations of the recrystallization textures of Al-Mg alloys annealed at high temperatures. {100} left angle 013 right angle developed most remarkably at 4 wt.% Mg, while {103} left angle 321 right angle showed the maximum development at 7 wt.% Mg. During subsequent grain growth at 450 C, remarkable texture changes were observed only in the alloys containing Mg in the range between 2 and 4 wt.%. In these alloys, {100} left angle 013 right angle developed at the expense of {100} left angle 001 right angle at earlier stages of grain growth, whereas {103} left angle 321 right angle increased independently of these two orientations at later stages of grain growth. Reflecting these texture changes, grain growth occurred in these alloys discontinuously. Such a discontinuous grain growth with large texture changes is expected, if strong textures are already present before grain growth, and if recrystallized grains having similar orientations are distributed by forming large clusters before grain growth. (orig.)

  7. Fabrication of wire and flat strips with elevated recrystallization temperature of Mo monocrystals

    International Nuclear Information System (INIS)

    Mikhajlov, S.M.; Nesgovorov, V.V.; Kabakova, L.G.; Korzukhin, V.E.; Savitskij, E.M.; Burkhanov, G.S.; Ottenberg, E.V.

    1977-01-01

    A technique is developed for manufacturing wire and flat strip of elevated recrystallization point from single crystals fo molybdenum with micro-additions of zirconium and titanium by rotary hot forging with subsequent drawing under hydrodynamic friction conditions. Flat strip is manufactured next from a wire annealed at 1300-1400 deg C in hydrogen. Resultant wire and flat strip feature a high recrystallization point and a good shape stability. Tests on their ultimate strength on the range of temperatures between 20 and 1700 deg C have shown that the maximum temperature of the recrystallization onset is that of a wire from Mo single crystals of orientation [110], containing micro-additions of Zr and Ti, whereas loss of strength is at its highest in a wire from non-alloyed single-crystal molybdenum

  8. Study of elevated temperature design standard against thermal loads

    International Nuclear Information System (INIS)

    Kasahara, Naoto; Asayama, Tai; Morishita, Masaki

    2001-01-01

    Elevated temperature components must be designed against both pressure and thermal loads. In the case of sodium circuits of fast breeder reactors, a restriction from the pressure load becomes small because of the high boiling point of sodium. Design approaches for thermal loads (displacement-controlled) are compared with those against pressure loads (load-controlled). Considering differences between those two approaches, a concept of the elevated temperature design standard that takes the nature of thermal loads fully into account is proposed. This concept is a basis of load evaluation techniques and an inelastic analysis guide, that are being developed. Finally, problems and plans to realize the above concept are discussed. (author)

  9. Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

    Science.gov (United States)

    Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

    Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

  10. Results of performance testing the Russian RPV temperature measurement probe used for annealing

    International Nuclear Information System (INIS)

    Nakos, J.T.; Selsky, S.

    1998-03-01

    This paper provides information on three (3) topics related to temperature measurements in an annealing procedure: (1) results of a series of experiments performed by CNIITMASH of the Russian consortium MOHT on their reactor pressure vessel (RPV) temperature measurement probe, (2) a discussion regarding uncertainties and errors in RPV temperature measurements, and (3) predictions from a thermal model of a spherical RPV temperature measurement probe. MOHT teamed with MPR Associates and was to perform the Annealing Demonstration Project (ADP) on behalf of the US Department of Energy, ESEERCo, EPRI, CRIEPI, Framatome, and Consumers Power Co. at the Midland plant. Experimental results show that the CNIITMASH probe errors are a maximum of about 27 C (49 F) during a 15 C/hr (27 F/hr) heat-up but only about 3 C (5.4 F) (0.6%) during the hold portion at 470 C (878 F). These errors are much smaller than those obtained from a similar series of experiments performed by Sandia National Laboratories (Sandia). The discussion about uncertainties and errors shows that results presented as a temperature difference provides a measure of the probe error. Qualitative agreement is shown between the model predictions, the experimental results of the CNIITMASH probe and the experimental results of a series of similar experiments performed by Sandia

  11. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    Science.gov (United States)

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  12. Effect of annealing temperature on the tribological behavior of ZnO films prepared by sol-gel method

    International Nuclear Information System (INIS)

    Lin Liyu; Kim, Dae-Eun

    2009-01-01

    The tribological behavior of zinc oxide (ZnO) films grown on glass and silicon (100) substrates by sol-gel method was investigated. Particularly, the as-coated films were post-annealed at different temperatures in air to investigate the effect of annealing temperature. Crystal structural and surface morphology of the films were measured by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). XRD patterns and AFM images indicated that the crystallinity and grain size of the films were enhanced and increased, respectively, with temperature. The tribological behavior of films was evaluated by sliding the ZnO films against a Si 3 N 4 ball under 0.5 gf normal load using a reciprocating pin-on-plate tribo-tester. The wear tracks of the films were measured by AFM to quantify the wear resistance of the films. The results showed that the wear resistance of the films could be improved by the annealing process. The wear resistance of the films generally increased with annealing temperature. Specifically, the wear resistance of the films was significantly improved when the annealing temperature was higher than 550 deg. C. The increase in the wear resistance is attributed to the increase in hardness and modulus of the film with annealing temperature

  13. Solution hardening and strain hardening at elevated temperatures

    International Nuclear Information System (INIS)

    Kocks, U.F.

    1982-10-01

    Solutes can significantly increase the rate of strain hardening; as a consequence, the saturation stress, at which strain hardening tends to cease for a given temperature and strain rate, is increased more than the yield stress: this is the major effect of solutes on strength at elevated temperatures, especially in the regime where dynamic strain-aging occurs. It is shown that local solute mobility can affect both the rate of dynamic recovery and the dislocation/dislocation interaction strength. The latter effect leads to multiplicative solution strengthening. It is explained by a new model based on repeated dislocation unlocking, in a high-temperature limit, which also rationalizes the stress dependence of static and dynamic strain-aging, and may help explain the plateau of the yield stress at elevated temperatures. 15 figures

  14. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    Science.gov (United States)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  15. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

    Directory of Open Access Journals (Sweden)

    Chong-Chong Dai

    2014-04-01

    Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

  16. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  17. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  18. Structural changes of manganese spinel at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guohua; Iijima, Yukiko; Azuma, Hideto [Nishi Battery Laboratories, Sony Corporation, 4-16-1 Okata, Kanagawa 243-0021 Atsugi (Japan); Kudo, Yoshihiro [Technical Support Center, Sony Corporation, 4-16-1 Okata, Kanagawa 243-0021 Atsugi (Japan)

    2002-01-01

    A chemical synthesis route to Cr-doped and undoped Mn spinel was developed for the purpose of detailed structural analysis for elucidating the relationship between storage performance and structural changes at elevated temperatures. We identified a two-phase segregation in the lithium compositional range of 0.6elevated temperatures was observed for electrochemical cells. These two phases also coexist in Cr-doped spinel in the lithium compositional range of 0.4elevated temperatures. X-ray absorption fine structure (XAFS) analysis revealed that the Cr-doped samples showed less change in the local structure after storage than the undoped spinel samples. These results suggest that the Cr-doped spinel has higher structural stability at elevated temperatures than the undoped spinel.

  19. Plastic creep flow processes in fracture at elevated temperatures

    International Nuclear Information System (INIS)

    Rice, J.R.

    1979-01-01

    Recent theoretical developments on fracture at elevated temperature in the presence of overall plastic (dislocation) creep are discussed. Two topics are considered: stress fields at tips of macroscopic cracks in creeping solids; and diffusive growth of microscopic grain boundary cavities in creeping solids

  20. A materials test system for static compression at elevated temperatures

    Science.gov (United States)

    Korellis, J. S.; Steinhaus, C. A.; Totten, J. J.

    1992-06-01

    This report documents modifications to our existing computer-controlled compression testing system to allow elevated temperature testing in an evacuated environment. We have adopted an 'inverse' design configuration where the evacuated test volume is located within the induction heating coil, eliminating the expense and minimizing the evacuation time of a much larger traditional vacuum chamber.

  1. Air temperature variability in a high-elevation Himalayan catchment

    NARCIS (Netherlands)

    Heynen, Martin; Miles, Evan; Ragettli, Silvan; Buri, Pascal; Immerzeel, Walter W.; Pellicciotti, Francesca

    2016-01-01

    Air temperature is a key control of processes affecting snow and glaciers in high-elevation catchments, including melt, snowfall and sublimation. It is therefore a key input variable to models of land-surface-atmosphere interaction. Despite this importance, its spatial variability is poorly

  2. Stress envelope of silicon carbide composites at elevated temperatures

    International Nuclear Information System (INIS)

    Nozawa, Takashi; Kim, Sunghun; Ozawa, Kazumi; Tanigawa, Hiroyasu

    2014-01-01

    To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case

  3. Stress envelope of silicon carbide composites at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan); Kim, Sunghun [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Ozawa, Kazumi; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan)

    2014-10-15

    To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case.

  4. The effect of annealing temperature on the optical properties of a ruthenium complex thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ocakoglu, Kasim, E-mail: kasim.ocakoglu@mersin.edu.tr [Advanced Technology Research & Application Center, Mersin University, TR-33343, Yenisehir, Mersin (Turkey); Department of Energy Systems Engineering, Faculty of Technology, Mersin University, TR-33480 Mersin (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Department of Materials Science and Engineering, Faculty of Engineering and Architecture, Izmir Katip Celebi University, Izmir (Turkey); Aydin, Hasan [Izmir Institute of Technology, Department of Material Science and Engineering, Gulbahce Campus, 35430, Urla, Izmir (Turkey); Emen, Fatih Mehmet [Faculty of Arts and Sciences, Department of Chemistry, Mehmet Akif Ersoy University, TR-15030 Burdur (Turkey)

    2016-08-01

    The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10{sup −5} eV/K. Furthermore, the thermal analysis studies were carried out in the range 298–673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298–673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO{sub 2}, CO molecules and SO{sub 3}H group was eliminated between 614 K and 666 K. - Highlights: • Optical parameters of a ruthenium polypyridyl complex film under varying annealing temperatures • The film is quite stable up to 573 K. • The rate of change of optical energy gap was obtained as 5.23 × 10{sup −5} eV/K.

  5. Measurement of rock properties at elevated pressures and temperatures

    International Nuclear Information System (INIS)

    Pincus, H.J.; Hoskins, E.R.

    1985-01-01

    The papers in this volume were presented at an ASTM symposium held on 20 June 1983 in conjunction with the 24th Annual Rock Mechanics Symposium at Texas A and M University, College Station, TX. The purpose of these papers is to present recent developments in the measurement of rock properties at elevated pressures and temperatures, and to examine and interpret the data produced by such measurement. The need for measuring rock properties at elevated pressures and temperatures has become increasingly important in recent years. Location and design of nuclear waste repositories, development of geothermal energy sites, and design and construction of deep excavations for civil, military, and mining engineering require significantly improved capabilities for measuring rock properties under conditions substantially different from those prevailing in most laboratory and in situ work. The development of high-pressure, high-temperature capabilities is also significant for the analysis of tectonic processes

  6. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  7. Damage annealing in low temperature Fe/Mn implanted ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Gunnlaugsson, H. P. [University of Aarhus, Department of Physics and Astronomy (Denmark); Bharuth-Ram, K., E-mail: kbr@tlabs.ac.za [Durban University of Technology, Physics Department (South Africa); Johnston, K. [PH Department, ISOLDE/CERN (Switzerland); Langouche, G. [University of Leuven, Instituut voor Kern-en Stralings fysika (Belgium); Mantovan, R. [Laboratorio MDM, IMM-CNR (Italy); Mølholt, T. E. [University of Iceland, Science Institute (Iceland); Naidoo, D. [University of the Witwatersrand, School of Physics (South Africa); Ólafsson, O. [University of Iceland, Science Institute (Iceland); Weyer, G. [University of Aarhus, Department of Physics and Astronomy (Denmark)

    2015-04-15

    {sup 57}Fe Emission Mössbauer spectra obtained after low fluence (<10{sup 12} cm {sup −2}) implantation of {sup 57}Mn (T{sub 1/2}= 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe {sup 2+} and Fe {sup 3+} on Zn sites, interstitial Fe and Fe in damage regions (Fe {sub D}). The Fe {sub D} component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10{sup 15} cm {sup −2}){sup 57}Fe/ {sup 57}Co implanted ZnO and {sup 57}Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT.

  8. Damage annealing in low temperature Fe/Mn implanted ZnO

    International Nuclear Information System (INIS)

    Gunnlaugsson, H. P.; Bharuth-Ram, K.; Johnston, K.; Langouche, G.; Mantovan, R.; Mølholt, T. E.; Naidoo, D.; Ólafsson, O.; Weyer, G.

    2015-01-01

    57 Fe Emission Mössbauer spectra obtained after low fluence (<10 12 cm −2 ) implantation of 57 Mn (T 1/2 = 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe 2+ and Fe 3+ on Zn sites, interstitial Fe and Fe in damage regions (Fe D ). The Fe D component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10 15 cm −2 ) 57 Fe/ 57 Co implanted ZnO and 57 Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT

  9. Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

    Science.gov (United States)

    Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

    2018-05-01

    This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

  10. Elevated temperature mechanical properties of line pipe steels

    Science.gov (United States)

    Jacobs, Taylor Roth

    The effects of test temperature on the tensile properties of four line pipe steels were evaluated. The four materials include a ferrite-pearlite line pipe steel with a yield strength specification of 359 MPa (52 ksi) and three 485 MPa (70 ksi) yield strength acicular ferrite line pipe steels. Deformation behavior, ductility, strength, strain hardening rate, strain rate sensitivity, and fracture behavior were characterized at room temperature and in the temperature range of 200--350 °C, the potential operating range for steels used in oil production by the steam assisted gravity drainage process. Elevated temperature tensile testing was conducted on commercially produced as-received plates at engineering strain rates of 1.67 x 10 -4, 8.33 x 10-4, and 1.67 x 10-3 s-1. The acicular ferrite (X70) line pipe steels were also tested at elevated temperatures after aging at 200, 275, and 350 °C for 100 h under a tensile load of 419 MPa. The presence of serrated yielding depended on temperature and strain rate, and the upper bound of the temperature range where serrated yielding was observed was independent of microstructure between the ferrite-pearlite (X52) steel and the X70 steels. Serrated yielding was observed at intermediate temperatures and continuous plastic deformation was observed at room temperature and high temperatures. All steels exhibited a minimum in ductility as a function of temperature at testing conditions where serrated yielding was observed. At the higher temperatures (>275 °C) the X52 steel exhibited an increase in ductility with an increase in temperature and the X70 steels exhibited a maximum in ductility as a function of temperature. All steels exhibited a maximum in flow strength and average strain hardening rate as a function of temperature. The X52 steel exhibited maxima in flow strength and average strain hardening rate at lower temperatures than observed for the X70 steels. For all steels, the temperature where the maximum in both flow

  11. Association of elevated ambient temperature with death from cocaine overdose.

    Science.gov (United States)

    Auger, Nathalie; Bilodeau-Bertrand, Marianne; Labesse, Maud Emmanuelle; Kosatsky, Tom

    2017-09-01

    Ecologic data suggest that elevated outdoor temperature is correlated with mortality rates from cocaine overdose. Using non-aggregated death records, we studied the association of hot temperatures with risk of death from cocaine overdose. We carried out a case-crossover study of all deaths from cocaine or other drug overdose between the months of May and September, from 2000 through 2013 in Quebec, Canada. We used conditional logistic regression to estimate odds ratios (OR) and 95% confidence intervals (CI) for the association between maximum outdoor temperature and death from cocaine or other drug overdose. The main outcome measure was death from cocaine overdose as a function of maximum temperature the day of death and the days immediately preceding death. There were 316 deaths from cocaine overdose and 446 from other drug overdoses during the study. Elevated temperature the preceding week was associated with the likelihood of death from cocaine but not other drug overdose. Compared with 20°C, a maximum weekly temperature of 30°C was associated with an OR of 2.07 for death from cocaine overdose (95% CI 1.15-3.73), but an OR of 1.03 for other drug overdoses (95% CI 0.60-1.75). Associations for cocaine overdose were present with maximum daily temperature the day of and each of the three days preceding death. Elevated ambient temperature is associated with the risk of death from cocaine overdose. Public health practitioners and drug users should be aware of the added risk of mortality when cocaine is used during hot days. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  13. Stability of lithium niobate on irradiation at elevated temperature

    International Nuclear Information System (INIS)

    Primak, W.; Gavin, A.P.; Anderson, T.T.; Monahan, E.

    1977-01-01

    In contrast to results obtained for neutron irradiation in a thermal reactor near room temperature, lithium niobate plates irradiated in the Experimental Breeder Reactor II (EBR-II) did not become metamict. This is attributed to the elevated temperature of the EBR-II. Ion bombardment experiments indicate that to avoid disordering of lithium niobate on irradiation, its temperature should be maintained above 673 K. Evidence for ionic conductivity was found at 873 K, indicating that it would be inadvisable to permit the temperature to rise that high, particularly with voltage across the plate. In reactor application as a microphone transducer, it is tentatively recommended that the lithium niobate be maintained in the middle of this temperature range for a major portion of reactor operating time

  14. Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

    Science.gov (United States)

    Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

    2018-03-01

    Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

  15. Thermal Behavior of Cylindrical Buckling Restrained Braces at Elevated Temperatures

    Directory of Open Access Journals (Sweden)

    Elnaz Talebi

    2014-01-01

    Full Text Available The primary focus of this investigation was to analyze sequentially coupled nonlinear thermal stress, using a three-dimensional model. It was meant to shed light on the behavior of Buckling Restraint Brace (BRB elements with circular cross section, at elevated temperature. Such bracing systems were comprised of a cylindrical steel core encased in a strong concrete-filled steel hollow casing. A debonding agent was rubbed on the core’s surface to avoid shear stress transition to the restraining system. The numerical model was verified by the analytical solutions developed by the other researchers. Performance of BRB system under seismic loading at ambient temperature has been well documented. However, its performance in case of fire has yet to be explored. This study showed that the failure of brace may be attributed to material strength reduction and high compressive forces, both due to temperature rise. Furthermore, limiting temperatures in the linear behavior of steel casing and concrete in BRB element for both numerical and analytical simulations were about 196°C and 225°C, respectively. Finally it is concluded that the performance of BRB at elevated temperatures was the same as that seen at room temperature; that is, the steel core yields prior to the restraining system.

  16. Thermal behavior of cylindrical buckling restrained braces at elevated temperatures.

    Science.gov (United States)

    Talebi, Elnaz; Tahir, Mahmood Md; Zahmatkesh, Farshad; Yasreen, Airil; Mirza, Jahangir

    2014-01-01

    The primary focus of this investigation was to analyze sequentially coupled nonlinear thermal stress, using a three-dimensional model. It was meant to shed light on the behavior of Buckling Restraint Brace (BRB) elements with circular cross section, at elevated temperature. Such bracing systems were comprised of a cylindrical steel core encased in a strong concrete-filled steel hollow casing. A debonding agent was rubbed on the core's surface to avoid shear stress transition to the restraining system. The numerical model was verified by the analytical solutions developed by the other researchers. Performance of BRB system under seismic loading at ambient temperature has been well documented. However, its performance in case of fire has yet to be explored. This study showed that the failure of brace may be attributed to material strength reduction and high compressive forces, both due to temperature rise. Furthermore, limiting temperatures in the linear behavior of steel casing and concrete in BRB element for both numerical and analytical simulations were about 196°C and 225°C, respectively. Finally it is concluded that the performance of BRB at elevated temperatures was the same as that seen at room temperature; that is, the steel core yields prior to the restraining system.

  17. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    Energy Technology Data Exchange (ETDEWEB)

    Tcherdyntsev, V.V., E-mail: vvch08@yandex.ru [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Aleev, A.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Churyukanova, M.N.; Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620016 (Russian Federation); Korchuganova, O.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Zhukova, V. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); Zhukov, A.P. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2014-02-15

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon.

  18. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    International Nuclear Information System (INIS)

    Tcherdyntsev, V.V.; Aleev, A.A.; Churyukanova, M.N.; Kaloshkin, S.D.; Medvedeva, E.V.; Korchuganova, O.A.; Zhukova, V.; Zhukov, A.P.

    2014-01-01

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon

  19. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  20. The microstructure and surface hardness of Ti6Al4V alloy implanted with nitrogen ions at an elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Vlcak, Petr, E-mail: petr.vlcak@fs.cvut.cz [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Cerny, Frantisek [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Drahokoupil, Jan [Department of Metals, Institute of Physics, AS CR, v.v.i., Na Slovance 2, 182 21 Prague (Czech Republic); Sepitka, Josef [Department of Mechanics, Biomechanics and Mechatronics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Tolde, Zdenek [Department of Materials Engineering, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic)

    2015-01-25

    Highlights: • The Ti6Al4V samples were implanted with 90 keV nitrogen ions. • The samples were annealed at 500 °C during the ion implantation process. • An elevated temperature increases the mobility of the atoms and the quantity of TiN. • The hardness showed a significant increase compared to room temperature implantation. - Abstract: The effect of an elevated temperature during nitrogen ion implantation on the microstructure and on the surface hardness of Ti6Al4V titanium alloy was examined. The implantation process was carried out at fluences of 1 ⋅ 10{sup 17}, 2.7 ⋅ 10{sup 17} and 6 ⋅ 10{sup 17} cm{sup −2} and at ion energy 90 keV. The implanted samples were annealed at 500 °C during the implantation process. X-ray diffraction analysis was performed to obtain a phase characterization and a phase quantification in the implanted sample surface. The surface hardness was investigated by nanoindentation testing, and the nitrogen depth distribution was measured by Rutherford Backscattering Spectroscopy. Elevated temperature led to increased formation of a TiN compound. It was found that a mixture of TiN and an α-Ti(+N) solid solution had a predominant amount of TiN for samples with fluence of 2.7 ⋅ 10{sup 17} cm{sup −2} or higher. Elevated temperature during ion implantation caused an increase in surface hardening more towards the depth of the substrate in comparison with room temperature implantation. The hardness showed a remarkably significant increase at a fluence of 1 ⋅ 10{sup 17} and 2.7 ⋅ 10{sup 17} cm{sup −2} compared to samples implanted at the same fluences and at room temperature. There is a discussion of such mechanisms that explain the observed hardening more towards the depth of the substrate, and the increase in hardness.

  1. Flow stress, subgrain size, and subgrain stability at elevated temperature

    International Nuclear Information System (INIS)

    Sherby, O.D.; Klundt, R.H.; Miller, A.K.

    1977-01-01

    Well defined subgrain boundaries dominate the microstructural changes occurring during plastic flow of polycrystalline metals at elevated temperature. The quantitative influence of subgrain size on elevated-temperature plastic flow is considered. Based on the results of tests under constant-stress and constant-structure conditions, and equation is developed which predicts the creep rate as a function of subgrain size, stress, diffusion coefficient, and elastic modulus. In general, the subgrain size is a unique function of the current modulus-compensated flow stress, but if fine subgrains can be introduced and stabilized, large increases in creep strength may result. The applicability of the phenomenological relation developed to the behavior of dispersion-strengthened materials (where the second-phase particles may predetermine the effective subgrain size) is discussed. When subgrain effects are included, it is shown that the creep rate is less dependent on stacking fault energy than has been previously thought

  2. Fatigue crack propagation under elastic plastic medium at elevated temperature

    International Nuclear Information System (INIS)

    Asada, Y.; Yuuki, R.; Sakon, T.; Sunamoto, D.; Tokimasa, K.; Makino, Y.; Kitagawa, M; Shingai, K.

    1980-01-01

    The purposes of the present study are to establish the testing method to obtain compatible data on the low cycle fatigue crack propagation at elevated temperature, and to investigate the parameter controlling the crack propagation rate. In the present study, the preliminary experiments have been carried out on low cycle fatigue crack propagation behaviour in type 304 stainless steel in air at 550 0 C, using two types of specimen with a through thickness notch. Both strain controlled and stress controlled fatigue tests have been done under a fully reversed strain or stress cycling. The data obtained are correlated with some fracture mechanics parameters and are discussed with the appropriate parameter for evaluating the low cycle fatigue crack propagation behaviour at elevated temperature. (author)

  3. Solution-Mediated Annealing of Polymer Optical Fiber Bragg Gratings at Room Temperature

    DEFF Research Database (Denmark)

    Fasano, Andrea; Woyessa, Getinet; Janting, Jakob

    2017-01-01

    In this letter, we investigate the response of poly(methylmethacrylate) (PMMA) microstructured polymer optical fiber Bragg gratings (POFBGs) after immersion inmethanol/water solutions at room temperature. As the glass transition temperature of solution-equilibrated PMMA differs from the one...... of solvent-free PMMA, different concentrations of methanol and water lead to various degrees of frozen-in stress relaxation in the fiber. After solvent evaporation, we observe a permanent blue-shift in the grating resonance wavelength. The main contribution in the resonance wavelength shift arises from...... a permanent change in the size of the fiber. The results are compared with conventional annealing. The proposed methodology is cost-effective as it does not require a climate chamber. Furthermore, it enables an easy-to-control tuning of the resonance wavelength of POFBGs....

  4. The tensile behavior of GH3535 superalloy at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Han, F.F.; Zhou, B.M.; Huang, H.F.; Leng, B.; Lu, Y.L. [Thorium Molten Salts Reactor Center, Shanghai Institute of Applied Physics, Chinese Academy of Sciences (China); Dong, J.S. [Superalloy Division, Institute of Metal Research, Chinese Academy of Sciences (China); Li, Z.J., E-mail: lizhijun@sinap.ac.cn [Thorium Molten Salts Reactor Center, Shanghai Institute of Applied Physics, Chinese Academy of Sciences (China); Zhou, X.T. [Thorium Molten Salts Reactor Center, Shanghai Institute of Applied Physics, Chinese Academy of Sciences (China)

    2016-10-01

    The tensile behavior of GH3535 alloy has been investigated at strain rates of 8.33 × 10{sup −5}/s{sup −1}–8.33 × 10{sup −3}/s{sup −1}, in the temperature range of 25–800 °C. The results showed that the ultimate tensile strength was decreased with increasing temperature and increased with rising strain rate, whereas the yield strength kept almost a constant value at the temperature range from 550 to 800 °C in all strain rates test. The formation of M{sub 12}C carbides at the grain boundary during the tension process played an important role in increasing the yield strength of the alloy at elevated temperatures. But inhomogeneous deformation at 650 °C resulted in the minimum ductility of the alloy. Additionally, various types of serrations were noticed on the stress-strain curves for the alloy tested in the temperature range of 500–800 °C. Normal Portevin-Le Chatelier (PLC) effect and positive strain rate sensitivity were observed in this alloy. Type A and A + B serrations were presented to stress-strain curves at temperatures below 650 °C, whereas type C serration was noticed when the temperature rose above 650 °C. The analysis suggested that the interactions between substitutional solutes migration and mobile dislocations were the main reason for the serrated flow behavior in this alloy. - Highlights: • The tensile behavior of GH3535 alloy at elevated temperature was studied. • The yield strength anomaly was observed in the temperature range from 550 to 800 °C. • The formation of M{sub 12}C improves the grain boundary strength to a certain extent. • Inhomogeneous deformation at 650 °C results in the ductility loss of the alloy. • The interaction between solute atoms and dislocations results in the PLC effect.

  5. Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

    Science.gov (United States)

    Chen, Tao-Hsing; Chen, Ting-You

    2015-11-03

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

  6. PCPV instrumentation and measurement techniques at elevated temperatures

    International Nuclear Information System (INIS)

    Zemann, H.

    1978-11-01

    Strain measurement within the structural concrete of the prototype Prestressed Concrete Pressure Vessel have been performed during a one year operation at elevated temperatures up to 120 0 C. Laboratory investigations on the properties of the gauges and the concrete mix are applied to separate the different contributions to the strain data. A decrease of creep and loss of prestress and the arise of stable conditions is observed. (author)

  7. Corrosion resistant coatings suitable for elevated temperature application

    Science.gov (United States)

    Chan, Kwai S [San Antonio, TX; Cheruvu, Narayana Sastry [San Antonio, TX; Liang, Wuwei [Austin, TX

    2012-07-31

    The present invention relates to corrosion resistance coatings suitable for elevated temperature applications, which employ compositions of iron (Fe), chromium (Cr), nickel (Ni) and/or aluminum (Al). The compositions may be configured to regulate the diffusion of metals between a coating and a substrate, which may then influence coating performance, via the formation of an inter-diffusion barrier layer. The inter-diffusion barrier layer may comprise a face-centered cubic phase.

  8. Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

    Science.gov (United States)

    Bell, Robert T; Jacobs, Alan G; Sorg, Victoria C; Jung, Byungki; Hill, Megan O; Treml, Benjamin E; Thompson, Michael O

    2016-09-12

    A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

  9. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  10. Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel.

    Science.gov (United States)

    Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

    2014-09-12

    The effect of annealing temperature (1000-1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN.

  11. Effect of annealing temperature on electrical properties of poly (methyl methacrylate): titanium dioxide nanocomposite films using spin coating deposition technique

    International Nuclear Information System (INIS)

    Ismail, L N; Habibah, Z; Herman, S H; Rusop, M

    2014-01-01

    Nanocomposite poly (methyl methacrylate) :titanium dioxide (PMMA :TiO 2 ) film were deposited on glass substrate. The effect of annealing temperature, especially on electrical, dielectric and the morphological properties of the thin films were investigated by current-voltage (I-V) measurement, impedance spectroscopy, and FESEM. The annealing temperature is varies from 120°C, 140°C, 160°C, 180°C and 200°C. The electrical properties results showing when nanocomposite film annealed at '20°C produce the lowest current. Meanwhile, when the annealing temperature increased, the current increased drastically and this indicates the PMMA:TiO 2 nanocomposite film are no longer having insulating properties. The dielectric properties also indicate that film annealed at 120°C has the best dielectric properties compared to other temperature. The FESEM results show that as the temperature increased, the PMMA:TiO 2 nanocomposite film started to create a phase separation between the PMMA matrix and TiO 2 nanoparticles

  12. Elevations in core and muscle temperature impairs repeated sprint performance

    DEFF Research Database (Denmark)

    Drust, B.; Rasmussen, P.; Mohr, Magni

    2005-01-01

    on a cycle ergometer in normal (approximately 20 degrees C, control) and hot (40 degrees C, hyperthermia) environments. RESULTS: Completion of the intermittent protocol in the heat elevated core and muscle temperatures (39.5 +/- 0.2 degrees C; 40.2 +/- 0.4 degrees C), heart rate (178 +/- 11 beats min(-1...... metabolic fatigue agents and we, therefore, suggest that it may relate to the influence of high core temperature on the function of the central nervous system.......)), rating of perceived exertion (RPE) (18 +/- 1) and noradrenaline (38.9 +/- 13.2 micromol l(-1)) (all P

  13. Thermodynamic and structural characteristics of cement minerals at elevated temperature

    International Nuclear Information System (INIS)

    Bruton, C.J.; Meike, A.; Viani, B.E.; Martin, S.; Phillips, B.L.

    1994-05-01

    We have instituted an experimental and including program designed to elucidate the structural and thermodynamic response of cement minerals to elevated temperature. Components of the program involve: (a) synthesis of hydrated Ca-silicates; (b) structural analysis of cement phases induced by heating and dehydration/rehydration; (c) mechanistic and thermodynamic descriptions of the hydration/dehydration behavior of hydrated Ca-silicates as a function of temperature, pressure and relative humidity; (d) study of naturally occurring hydrated Ca-silicates; and (e) measurements of thermodynamic data for hydrated Ca-silicates

  14. Properties of Free-Machining Aluminum Alloys at Elevated Temperatures

    Science.gov (United States)

    Faltus, Jiří; Karlík, Miroslav; Haušild, Petr

    In areas close to the cutting tool the workpieces being dry machined could be heated up to 350°C and they may be impact loaded. Therefore it is of interest to study mechanical properties of corresponding materials at elevated temperatures. Free-machining alloys of Al-Cu and Al-Mg-Si systems containing Pb, Bi and Sn additions (AA2011, AA2111B, AA6262, and AA6023) were subjected to Charpy U notch impact test at the temperatures ranging from 20 to 350°C. The tested alloys show a sharp drop in notch impact strength KU at different temperatures. This drop of KU is caused by liquid metal embrittlement due to the melting of low-melting point dispersed phases which is documented by differential scanning calorimetry. Fracture surfaces of the specimens were observed using a scanning electron microscope. At room temperature, the fractures of all studied alloys exhibited similar ductile dimple fracture micromorphology, at elevated temperatures, numerous secondary intergranular cracks were observed.

  15. Elevated temperature ductility of types 304 and 316 stainless steel

    International Nuclear Information System (INIS)

    Sikka, V.K.

    1978-01-01

    Austenitic stainless steel types 304 and 316 are known for their high ductility and toughness. However, the present study shows that certain combinations of strain rate and test temperature can result in a significant loss in elevated-temperature ductility. Such a phenomenon is referred to as ductility minimum. The strain rate, below which ductility loss is initiated, decreases with decrease in test temperature. Besides strain rate and temperature, the ductility minimum was also affected by nitrogen content and thermal aging conditions. Thermal aging at 649 0 C was observed to eliminate the ductility minimum at 649 0 C in both types 304 and 316 stainless steel. Such an aging treatment resulted in a higher ductility than the unaged value. Aging at 593 0 C still resulted in some loss in ductility. Current results suggest that ductility-minimum conditions for stainless steel should be considered in design, thermal aging data analysis, and while studying the effects of chemical composition

  16. Microchip Electrophoresis at Elevated Temperatures and High Separation Field Strengths

    Science.gov (United States)

    Mitra, Indranil; Marczak, Steven P.; Jacobson, Stephen C.

    2014-01-01

    We report free-solution microchip electrophoresis performed at elevated temperatures and high separation field strengths. We used microfluidic devices with 11-cm long separation channels to conduct separations at temperatures between 22 (ambient) and 45 °C and field strengths from 100 to 1000 V/cm. To evaluate separation performance, N-glycans were used as a model system and labeled with 8-aminopyrene-1,3,6-trisulfonic acid to impart charge for electrophoresis and render them fluorescent. Typically, increased diffusivity at higher temperatures leads to increased axial dispersion and poor separation performance; however, we demonstrate that sufficiently high separation field strengths can be used to offset the impact of increased diffusivity in order to maintain separation efficiency. Efficiencies for these free-solution separations are the same at temperatures of 25, 35, and 45 °C with separation field strengths ≥500 V/cm. PMID:24114979

  17. Behavior of HPC with Fly Ash after Elevated Temperature

    Directory of Open Access Journals (Sweden)

    Huai-Shuai Shang

    2013-01-01

    Full Text Available For use in fire resistance calculations, the relevant thermal properties of high-performance concrete (HPC with fly ash were determined through an experimental study. These properties included compressive strength, cubic compressive strength, cleavage strength, flexural strength, and the ultrasonic velocity at various temperatures (20, 100, 200, 300, 400 and 500∘C for high-performance concrete. The effect of temperature on compressive strength, cubic compressive strength, cleavage strength, flexural strength, and the ultrasonic velocity of the high-performance concrete with fly ash was discussed according to the experimental results. The change of surface characteristics with the temperature was observed. It can serve as a reference for the maintenance, design, and the life prediction of high-performance concrete engineering, such as high-rise building, subjected to elevated temperatures.

  18. Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

    Science.gov (United States)

    Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

    2018-04-01

    We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

  19. Elevated temperature alters carbon cycling in a model microbial community

    Science.gov (United States)

    Mosier, A.; Li, Z.; Thomas, B. C.; Hettich, R. L.; Pan, C.; Banfield, J. F.

    2013-12-01

    Earth's climate is regulated by biogeochemical carbon exchanges between the land, oceans and atmosphere that are chiefly driven by microorganisms. Microbial communities are therefore indispensible to the study of carbon cycling and its impacts on the global climate system. In spite of the critical role of microbial communities in carbon cycling processes, microbial activity is currently minimally represented or altogether absent from most Earth System Models. Method development and hypothesis-driven experimentation on tractable model ecosystems of reduced complexity, as presented here, are essential for building molecularly resolved, benchmarked carbon-climate models. Here, we use chemoautotropic acid mine drainage biofilms as a model community to determine how elevated temperature, a key parameter of global climate change, regulates the flow of carbon through microbial-based ecosystems. This study represents the first community proteomics analysis using tandem mass tags (TMT), which enable accurate, precise, and reproducible quantification of proteins. We compare protein expression levels of biofilms growing over a narrow temperature range expected to occur with predicted climate changes. We show that elevated temperature leads to up-regulation of proteins involved in amino acid metabolism and protein modification, and down-regulation of proteins involved in growth and reproduction. Closely related bacterial genotypes differ in their response to temperature: Elevated temperature represses carbon fixation by two Leptospirillum genotypes, whereas carbon fixation is significantly up-regulated at higher temperature by a third closely related genotypic group. Leptospirillum group III bacteria are more susceptible to viral stress at elevated temperature, which may lead to greater carbon turnover in the microbial food web through the release of viral lysate. Overall, this proteogenomics approach revealed the effects of climate change on carbon cycling pathways and other

  20. Annealing effect reversal by water sorption-desorption and heating above the glass transition temperature-comparison of properties.

    Science.gov (United States)

    Saxena, A; Jean, Y C; Suryanarayanan, R

    2013-08-05

    Our objective is to compare the physical properties of materials obtained from two different methods of annealing reversal, that is, water sorption-desorption (WSD) and heating above glass transition temperature (HAT). Trehalose was annealed by storing at 100 °C for 120 h. The annealing effect was reversed either by WSD or HAT, and the resulting materials were characterized by differential scanning calorimetry (DSC), water sorption studies, and positron annihilation spectroscopy (PAS). While the products obtained by the two methods of annealing reversal appeared to be identical by conventional characterization methods, they exhibited pronounced differences in their water sorption behavior. Positron annihilation spectroscopy (PAS), by measuring the fractional free volume changes in the processed samples, provided a mechanistic explanation for the differences in the observed behavior.

  1. Corrosion resistance of duplex stainless steel subjected to long-term annealing in the spinodal decomposition temperature range

    International Nuclear Information System (INIS)

    Lo, K.H.; Kwok, C.T.; Chan, W.K.; Zeng, D.

    2012-01-01

    Highlights: ► Long-term DLEPR data on duplex stainless steel. ► Spinodal decomposition remains unabated even after 15,000 h of annealing. ► Effect of long-term annealing on healing has been investigated. - Abstract: The effect of thermal annealing up to 15,000 h between 300 °C and 500 °C on the corrosion resistance of the duplex stainless steel (DSS) 7MoPLUS has been investigated by using the DLEPR test. Spinodal decomposition in 7MoPLUS is unabated even after annealing for 15,000 h and no healing has been observed. The possible healing mechanisms in this temperature range (back diffusion of Cr atoms from the Cr-rich ferrite (α Cr ) and diffusion of Cr atoms from the austenite) and its absence in the present steel have been discussed.

  2. Corrosion resistance of duplex stainless steel subjected to long-term annealing in the spinodal decomposition temperature range

    Energy Technology Data Exchange (ETDEWEB)

    Lo, K.H., E-mail: KHLO@umac.mo [Department of Electromechanical Engineering, University of Macau, Macau (China); Kwok, C.T.; Chan, W.K.; Zeng, D. [Department of Electromechanical Engineering, University of Macau, Macau (China)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Long-term DLEPR data on duplex stainless steel. Black-Right-Pointing-Pointer Spinodal decomposition remains unabated even after 15,000 h of annealing. Black-Right-Pointing-Pointer Effect of long-term annealing on healing has been investigated. - Abstract: The effect of thermal annealing up to 15,000 h between 300 Degree-Sign C and 500 Degree-Sign C on the corrosion resistance of the duplex stainless steel (DSS) 7MoPLUS has been investigated by using the DLEPR test. Spinodal decomposition in 7MoPLUS is unabated even after annealing for 15,000 h and no healing has been observed. The possible healing mechanisms in this temperature range (back diffusion of Cr atoms from the Cr-rich ferrite ({alpha}{sub Cr}) and diffusion of Cr atoms from the austenite) and its absence in the present steel have been discussed.

  3. The effects of pre-dose and annealing temperature on some dosimetric properties of thermoluminescence of quartz

    International Nuclear Information System (INIS)

    Lin Zhikai

    1996-02-01

    The following aspects of dosimetric properties of quartz sample were studied. (1) The changes in dosimetric sensitivity of quartz with different pre-doses under different annealing temperature; (2) the option of optimal annealing temperature which can make the dosimetric sensitivity of quartz to restore its original level; (3) The changes in dosimetric sensitivity of quartz with different annealing time at 500 degree C for 8 h; (4) Repeated experiments were carried out in order to prove whether the sensitivity of quartz can restore its original level at annealing temperature 700 degree C for 3 h. It has been found that at 700 degree C for 3 h gave the least sensitivity change and the sensitivity of quartz almost restored its original level. Repeated experiments with four kinds of quartz sample confirmed this conclusion. The dramatic change of TL glow curve occurred only at the condition of annealing temperature 900 degree C for 1 h. This result was different from that obtained by D. J. Huntley et al. (1988). (3 refs., 4 figs., 1 tab.)

  4. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  5. Effect of Annealing Temperature on Gas Sensing Performance of SnO2 Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    G. E. PATIL

    2010-12-01

    Full Text Available The effect of variation of annealing temperature on the gas sensing characteristics of SnO2 thin films, which have been prepared by spray pyrolysis on alumina substrate at 350 oC, is investigated systematically for various gases at different operating temperature. The XRD, UV-visible spectroscopy and SEM techniques were employed to establish the structural, optical and morphological characteristics of the materials, resp. The X-ray diffraction results showed an increase in the crystallinity at higher annealing temperature. A high value of sensitivity is obtained for H2S gas at an optimum temperature of 100 oC is improved considerably. A SnO2 gas sensor annealed at 950 oC with sensitivity as high as 24 %, 4 times higher than that of sensor annealed at 550oC, are obtained for 80 ppm of H2S. The degree of crystallinity and grain size calculated from the XRD patterns has been found increasing with annealing temp

  6. Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

    2014-04-15

    In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

  7. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    International Nuclear Information System (INIS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-01-01

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  8. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

    2017-04-30

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  9. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    Science.gov (United States)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  10. A study on low temperature transformation ferrite in ultra low carbon IF steels (I) - effects of manganese and annealing conditions

    International Nuclear Information System (INIS)

    Jeong, Woo Chang; Lee, Jae Yeon; Jin, Young Sool

    2001-01-01

    An investigation was made to determine the effects of Mn content and annealing conditions on the formation of the low temperature transformation products in ultra low carbon interstitial free steels. With increasing the Mn content, yield and tensile strengths increased, but yield ratio decreased. The Mn was found to be effective to decrease the yield point elongation, causing continuous yielding in 3% Mn steel. Low temperature transformation ferrites such as quasi-polygonal ferrite, granular bainitic ferrite, and bainitic ferrite more easily formed with higher Mn content, higher annealing temperature, longer annealing time, and faster cooling rate. Polygonal ferrite grain was readily identified in the light microscope and was characterized by the polyhedral and equiaxed shape while quasi-polygonal ferrite showed the irregular changeful grain boundaries. It was found that both granular bainitic and bainitic ferrites revealed some etching evidence of substructures in the light microscope

  11. Influence of annealing temperature on structural and magnetic properties of MnFe2O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    Surowiec Zbigniew

    2015-03-01

    Full Text Available Nanoparticles of manganese ferrite were obtained by the impregnation of highly ordered mesoporous MCM-41 silica support. The investigated sample contained 20% wt. Fe. The obtained nanocrystallites were strongly dispersed in silica matrix and their size was about 2 nm. The sample annealing at 500°C led to increase of particle size to about 5 nm. The Mössbauer spectroscopy investigations performed at room temperature show on occurrence of MnFe2O4 nanoparticle in superparamagnetic state for the sample annealed in all temperatures. The coexistence of superparamagnetic and ferromagnetic phase was observed at liquid nitrogen temperature. The sample annealed at 400°C and 500°C has bigger manganese ferrite particle and better crystallized structure. One can assign them the discrete hyperfine magnetic field components.

  12. Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

    International Nuclear Information System (INIS)

    Gow, J P D; Smith, P H; Hall, D J; Holland, A D; Murray, N J; Pool, P

    2015-01-01

    A number of studies have demonstrated that a room temperature proton irradiation may not be sufficient to provide an accurate estimation of the impact of the space radiation environment on detector performance. This is a result of the relationship between defect mobility and temperature, causing the performance to vary subject to the temperature history of the device from the point at which it was irradiated. Results measured using Charge Coupled Devices (CCD) irradiated at room temperature therefore tend to differ from those taken when the device was irradiated at a cryogenic temperature, more appropriate considering the operating conditions in space, impacting the prediction of in-flight performance. This paper describes the cryogenic irradiation, and subsequent annealing of an e2v technologies Swept Charge Device (SCD) CCD236 irradiated at −35.4°C with a 10 MeV equivalent proton fluence of 5.0 × 10 8 protons · cm −2 . The CCD236 is a large area (4.4 cm 2 ) X-ray detector that will be flown on-board the Chandrayaan-2 and Hard X-ray Modulation Telescope spacecraft, in the Chandrayaan-2 Large Area Soft X-ray Spectrometer and the Soft X-ray Detector respectively. The SCD is readout continually in order to benefit from intrinsic dither mode clocking, leading to suppression of the surface component of the dark current and allowing the detector to be operated at warmer temperatures than a conventional CCD. The SCD is therefore an excellent choice to test and demonstrate the variation in the impact of irradiation at cryogenic temperatures in comparison to a more typical room temperature irradiation

  13. Steel fiber reinforced concrete subjected to elevated cyclic temperatures

    International Nuclear Information System (INIS)

    Yousif, R. A.; Rasheed, H. M.; Muhammad, H. A.

    1997-01-01

    The results from a series of tests on steel fiber reinforced concrete at elevated cyclic temperature are presented. The residual compressive strength and ultimate splitting tensile strength were nadir's on specimen ts with no fibers and with 0.5% and 1% plain steel fibers over a temperature range of 300-700 C. concrete was subjected to one, two or three cycles of heating and cooling. In general the exposure to temperature decreased the strength of concrete, although the number of heating cycles seems only to have a secondary effect. The results also show that the steel fiber reinforced concrete performs better than plain concrete. Two equations were suggested to predict the strength of concrete and the results show good agreement with the experimental values. . (authors). 10 refs., 1 tabs. 3 figs

  14. Microstructural design of magnesium alloys for elevated temperature performance

    Science.gov (United States)

    Bryan, Zachary Lee

    Magnesium alloys are promising for automotive and aerospace applications requiring lightweight structural metals due to their high specific strength. Weight reductions through material substitution significantly improve fuel efficiency and reduce greenhouse gas emissions. Challenges to widespread integration of Mg alloys primarily result from their limited ductility and elevated temperature strength. This research presents a microstructurally-driven systems design approach to Mg alloy development for elevated temperature applications. The alloy properties that were targeted included creep resistance, elevated temperature strength, room temperature ductility, and material cost. To enable microstructural predictions during the design process, computational thermodynamics was utilized with a newly developed atomic mobility database for HCP-Mg. The mobilities for Mg self-diffusion, as well as Al, Ag, Sn, and Zn solute diffusion in HCP-Mg were optimized from available diffusion literature using DICTRA. The optimized mobility database was then validated using experimental diffusion couples. To limit dislocation creep mechanisms in the first design iteration, a microstructure consisting of Al solutes in solid solution and a fine dispersion of Mg2Sn precipitates was targeted. The development of strength and diffusion models informed by thermodynamic predictions of phase equilibria led to the selection of an optimum Mg-1.9at%Sn-1.5at%Al (TA) alloy for elevated temperature performance. This alloy was cast, solution treated based upon DICTRA homogenization simulations, and then aged. While the tensile and creep properties were competitive with conventional Mg alloys, the TA mechanical performance was ultimately limited because of abnormal grain growth that occurred during solution treatment and the basal Mg2Sn particle morphology. For the second design iteration, insoluble Mg2Si intermetallic particles were added to the TA alloy to provide enhanced grain boundary pinning

  15. The influence of cooling rate from annealing temperature on the microstructure of Haynes 230

    International Nuclear Information System (INIS)

    Sah, Injin; Hong, Sunghoon; Jang, Changheui

    2015-01-01

    The effects of cooling rate from annealing temperature, which simulated the diffusion bonding process, on the microstructure of Haynes 230 (Ni-22Cr-14W-5Co) were investigated. While the grain boundaries are slightly covered with Cr-rich M 23 C 6 carbides for the diffusion-bonded and quenched condition, precipitates were extensively present on/near the grain boundaries for the furnace-cooled specimens. For the furnace-cooled specimens, lamellar precipitates were extensively formed near the grain boundaries below 1 000 deg. C, with intervals of a few hundred nanometers. Also, grain boundaries were severely serrated for the furnace-cooled specimens. Through electron probe micro analysis and transmission electron microscope, the lamellar precipitates were identified as (Cr,W)-rich M 23 C 6 -type lamellar carbides. Despite the differences in microstructure, tensile properties were not much affected by the cooling rate. Creep tests are underway and results will be presented. (authors)

  16. Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

    Science.gov (United States)

    Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

  17. Effect of annealing temperature on physical properties of solution processed nickel oxide thin films

    Science.gov (United States)

    Sahoo, Pooja; Thangavel, R.

    2018-05-01

    In this report, NiO thin films were prepared at different annealing temperatures from nickel acetate precursor by sol-gel spin coating method. These films were characterized by different analytical techniques to obtain their structural, optical morphological and electrical properties using X-ray diffractometer (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis NIR double beam spectrophotometer and Keithley 2450 source meter respectively. FESEM images clearly indicates the formation of a homogenous and porous films. Due to their porosity, they can be used in sensing applications. The optical absorption spectra elucidated that the films are highly transparent and have a suitable band gap which are in similar agreement with earlier reports. The current enhancement under illumination shows the suitability of nanostructured NiO thin films in its application in photovoltaics.

  18. Effect of annealing temperature on the PEC performance of electrodeposited copper oxides

    Science.gov (United States)

    Marathey, Priyanka; Pati, Ranjan; Mukhopadhyay, Indrajit; Ray, Abhijit

    2018-05-01

    In this work, we have deposited Cu2O film on fluorine doped tin oxide (FTO) substrate by electrodeposition. Pure CuO phase has been obtained by annealing the electrodeposited Cu2O film at optimized temperature (500°C) for two hours in air. Copper(I) oxide films showed good photo response with a current density of 0.54mA/cm2 at 0 V vs RHE. It is evident from UV-Visible spectroscopic analysis that the bandgap of Cu(I) and Cu(II) oxides differs from each other resulting in significant change in photo current for these two phases, observed in the PEC study. However CuO film showed better stability as compared to Cu2O film.

  19. Dielectric response of capacitor structures based on PZT annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

    2016-12-09

    Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

  20. Study of deuterium retention in/release from ITER-relevant Be-containing mixed material layers implanted at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Sugiyama, K., E-mail: kazuyoshi.sugiyama@ipp.mpg.de [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Porosnicu, C. [National Institute for Laser, Plasma and Radiation Physics, EURATOM-MEdC Association, 077125 Bucharest (Romania); Jacob, W.; Roth, J.; Dürbeck, Th. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Jepu, I.; Lungu, C.P. [National Institute for Laser, Plasma and Radiation Physics, EURATOM-MEdC Association, 077125 Bucharest (Romania)

    2013-07-15

    D implantation into Be-containing mixed material layers: Be, Be–W (W: ∼6 at.%) and Be–C (C: ∼50 at.%), was performed at elevated temperatures. The temperature dependence of D retention varied depending on the admixed element. D retention in Be and Be–W layers decreases with increasing implantation temperature, while the Be–C layers maintained rather high D retention in the present investigated temperature range (up to 623 K). D desorption behaviour from Be–C suggests the contribution of C–D bonds to D retention. W admixture into Be can significantly suppress D retention in Be. Long-term isothermal annealing at 513 and 623 K for D removal was also performed to simulate the ITER-wall-baking scenario. Even extended annealing at temperatures comparable to or lower than the implantation temperature does not lead to a significant release of retained D.

  1. Elevated temperature crack growth in advanced powder metallurgy aluminum alloys

    Science.gov (United States)

    Porr, William C., Jr.; Gangloff, Richard P.

    1990-01-01

    Rapidly solidified Al-Fe-V-Si powder metallurgy alloy FVS0812 is among the most promising of the elevated temperature aluminum alloys developed in recent years. The ultra fine grain size and high volume fraction of thermally stable dispersoids enable the alloy to maintain tensile properties at elevated temperatures. In contrast, this alloy displays complex and potentially deleterious damage tolerant and time dependent fracture behavior that varies with temperature. J-Integral fracture mechanics were used to determine fracture toughness (K sub IC) and crack growth resistance (tearing modulus, T) of extruded FVS0812 as a function of temperature. The alloy exhibits high fracture properties at room temperature when tested in the LT orientation, due to extensive delamination of prior ribbon particle boundaries perpendicular to the crack front. Delamination results in a loss of through thickness constraint along the crack front, raising the critical stress intensity necessary for precrack initiation. The fracture toughness and tensile ductility of this alloy decrease with increasing temperature, with minima observed at 200 C. This behavior results from minima in the intrinsic toughness of the material, due to dynamic strain aging, and in the extent of prior particle boundary delaminations. At 200 C FVS0812 fails at K levels that are insufficient to cause through thickness delamination. As temperature increases beyond the minimum, strain aging is reduced and delamination returns. For the TL orientation, K (sub IC) decreased and T increased slightly with increasing temperature from 25 to 316 C. Fracture in the TL orientation is governed by prior particle boundary toughness; increased strain localization at these boundaries may result in lower toughness with increasing temperature. Preliminary results demonstrate a complex effect of loading rate on K (sub IC) and T at 175 C, and indicate that the combined effects of time dependent deformation, environment, and strain aging

  2. Effect of annealing temperature on surface morphology and work function of ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hainan [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Xue, Mingshan, E-mail: xuems04@mails.ucas.ac.cn [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Ou, Junfei [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou 213164 (China); Wang, Fajun [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Li, Wen, E-mail: wenl@ualberta.ca [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China)

    2013-07-15

    Highlights: •The 600°C and 450°C isothermal sections of the Zn-Fe-B system are determined. •The solubility of Zn in Fe{sub 2}B and FeB at 600°C is 1.8 at.% and 2.5 at.%, respectively. •The solubility of Zn in Fe{sub 2}B and FeB at 450°C is 1.7 at.% and 2.1 at.%, respectively. •All Fe-Zn compounds can be in equilibrium with Fe{sub 2}B at 450°C. •Both FeB and Fe{sub 2}B are in equilibrium with the liquid phase at 600°C. -- Abstract: A simple and effective method of fabricating nanomaterials and the understanding of their electronic structures are significant for designing novel nanodevices. In this study, ZnO nanorod arrays on ITO substrate were synthesized by electrochemical deposition, and the effect of annealing temperature on surface morphology and especially work function was investigated using various techniques. The results indicated that the formation of hexagonal ZnO nanorod arrays with (0 0 0 1) orientation was strongly associated with the annealing temperature. The work function of well-aligned ZnO nanorod arrays is 4.84 eV, which shows an obvious dependence on the arrangement of ZnO nanorod arrays. These changes in work function of ZnO nanorod arrays (e.g., used as the photoanode of dye-sensitized solar cells) are important to understand the electron transport of related nanodevices.

  3. Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

    Science.gov (United States)

    Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

    2017-08-09

    High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V 2 O 5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V 2 O 5 cathode was significantly decreased from 2.5 × 10 4 to 71 Ω·cm 2 at room temperature and from 170 to 31 Ω·cm 2 at 100 °C. Additionally, the diffusion resistance in the V 2 O 5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm 2 and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V 2 O 5 cathode and garnet solid electrolyte without compromising battery safety or performance.

  4. The effects of annealing temperature and cooling rate on carbide precipitation behavior in H13 hot-work tool steel

    International Nuclear Information System (INIS)

    Kang, Minwoo; Park, Gyujin; Jung, Jae-Gil; Kim, Byung-Hoon; Lee, Young-Kook

    2015-01-01

    Highlights: • Unexpected Mo carbides formed during slow cooling from low annealing temperatures. • Mo carbides formed during the migration of Mo for a transition of Cr-rich carbide. • Mo carbides were precipitated at the boundaries of M 7 C 3 carbides and ferrite grains. • Annealing conditions for the precipitation of Mo carbides were discussed. - Abstract: The precipitation behavior of H13 hot-work tool steel was investigated as a function of both annealing temperature and cooling rate through thermodynamic calculations and microstructural analyses using transmission and scanning electron microscope and a dilatometer. The V-rich MC carbide and Cr-rich M 7 C 3 and M 23 C 6 carbides were observed in all annealed specimens regardless of annealing and cooling conditions, as expected from an equilibrium phase diagram of the steel used. However, Mo-rich M 2 C and M 6 C carbides were unexpectedly precipitated at a temperature between 675 °C and 700 °C during slow cooling at a rate of below 0.01 °C/s from the annealing temperatures of 830 °C and below. The solubility of Mo in both M 7 C 3 and ferrite reduces with decreasing temperature during cooling. Mo atoms diffuse out of both M 7 C 3 and ferrite, and accumulate locally at the interface between M 7 C 3 and ferrite. Mo carbides were form at the interface of M 7 C 3 carbides during the transition of Cr-rich M 7 C 3 to stable M 23 C 6

  5. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

    Science.gov (United States)

    Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

    2015-07-29

    A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

  6. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

    Directory of Open Access Journals (Sweden)

    Qifeng Lu

    2015-07-01

    Full Text Available A powerful characterization technique, pulse capacitance-voltage (CV technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111 substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD. The results indicated that: (1 more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrOx; (2 the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N2 ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 1012 cm−2 for as-deposited sample to 4.55 × 1012 cm−2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10−6 A/cm2 at Vg = +0.5 V for the as-deposited sample to 10−3 A/cm2 at Vg = +0.5 V for the 900 °C annealed one.

  7. Dynamic Uniaxial Compression of HSLA-65 Steel at Elevated Temperatures

    Science.gov (United States)

    Dike, Shweta; Wang, Tianxue; Zuanetti, Bryan; Prakash, Vikas

    2017-12-01

    In the present study, the dynamic response of a high-strength, low alloy Grade 65 (HSLA-65) steel, used by the United States Navy for ship hull construction, is investigated under dynamic uniaxial compression at temperatures ranging from room temperature to 1000 °C using a novel elevated temperature split-Hopkinson pressure bar. These experiments are designed to probe the dynamic response of HSLA-65 steel in its single α-ferrite phase, mixed α + γ-austenite phase, and the single γ-austenite phase, as a function of temperature. The investigation is conducted at two different average strain rates—1450 and 2100/s. The experimental results indicate that at test temperatures in the range from room temperature to lower than 600 °C, i.e. prior to the development of the mixed α + γ phase, a net softening in flow strength is observed at all levels of plastic strain with increase in test temperatures. As the test temperatures are increased, the rate of this strain softening with temperature is observed to decrease, and at 600 °C the trend reverses itself resulting in an increase in flow stress at all strains tested. This increase in flow stress is understood be due to dynamic strain aging, where solute atoms play a distinctive role in hindering dislocation motion. At 800 °C, a (sharp) drop in the flow stress, equivalent to one-half of its value at room temperature, is observed. As the test temperature are increased to 900 and 1000 °C, further drop in flow stress are observed at all plastic strain levels. In addition, strain hardening in flow stress is observed at all test temperatures up to 600 °C; beyond 800 °C the rate of strain hardening is observed to decrease, with strain softening becoming dominant at temperatures of 900 °C and higher. Moreover, comparing the high strain rate stress versus strain data gathered on HSLA 65 in the current investigation with those available in the literature at quasi-static strain rates, strain-rate hardening can be

  8. Response of ferritic steels to nonsteady loading at elevated temperatures

    International Nuclear Information System (INIS)

    Swindeman, R.W.

    1984-01-01

    High-temperature operating experience is lacking in pressure vessel materials that have strength levels above 586 MPa. Because of their tendency toward strain softening, we have been concerned about their behavior under nonsteady loading. Testing was undertaken to explore the extent of softening produced by monotonic and cyclic strains. The specific materials included bainitic 2 1/4Cr-1Mo steel, a micro-alloyed version of 2 1/4Cr-1Mo steel, a micro-alloyed version of 2 1/4Cr-1Mo steel containing vanadium, titanium, and boron, and a martensitic 9Cr-1Mo-V-Nb steel. Tests included tensile, creep, variable stress creep, relaxation, strain cycling, stress cycling, and non-isothermal creep ratchetting experiments. We found that these steels had very low uniform elongation and exhibited small strains to the onset of tertiary creep compared to annealed 2 1/4Cr-1Mo steel. Repeated relaxation test data also indicated a limited capacity for strain hardening. Reversal strains produced softening. The degree of softening increased with increased initial strength level. We concluded that the high strength bainitic and martensitic steels should perform well when used under conditions where severe cyclic operation does not occur

  9. High temperature annealing of fission tracks in fluorapatite, Santa Fe Springs oil field, Los Angeles Basin, California

    Science.gov (United States)

    Naeser, Nancy D.; Crowley, Kevin D.; McCulloh, Thane H.; Reaves, Chris M.; ,

    1990-01-01

    Annealing of fission tracks is a kinetic process dependent primarily on temperature and to a laser extent on time. Several kinetic models of apatite annealing have been proposed. The predictive capabilities of these models for long-term geologic annealing have been limited to qualitative or semiquantitative at best, because of uncertainties associated with (1) the extrapolation of laboratory observations to geologic conditions, (2) the thermal histories of field samples, and (3) to some extent, the effect of apatite composition on reported annealing temperatures. Thermal history in the Santa Fe Springs oil field, Los Angeles Basin, California, is constrained by an exceptionally well known burial history and present-day temperature gradient. Sediment burial histories are continuous and tightly constrained from about 9 Ma to present, with an important tie at 3.4 Ma. No surface erosion and virtually no uplift were recorded during or since deposition of these sediments, so the burial history is simple and uniquely defined. Temperature gradient (???40??C km-1) is well established from oil-field operations. Fission-track data from the Santa Fe Springs area should thus provide one critical field test of kinetic annealing models for apatite. Fission-track analysis has been performed on apatites from sandstones of Pliocene to Miocene age from a deep drill hole at Santa Fe Springs. Apatite composition, determined by electron microprobe, is fluorapatite [average composition (F1.78Cl0.01OH0.21)] with very low chlorine content [less than Durango apatite; sample means range from 0.0 to 0.04 Cl atoms, calculated on the basis of 26(O, F, Cl, OH)], suggesting that the apatite is not unusually resistant to annealing. Fission tracks are preserved in these apatites at exceptionally high present-day temperatures. Track loss is not complete until temperatures reach the extreme of 167-178??C (at 3795-4090 m depth). The temperature-time annealing relationships indicated by the new data

  10. Rules for the analysis of mechanical structures at elevated temperatures

    International Nuclear Information System (INIS)

    Jakubowicz, H.; Petrequin, P.; Schaller, K.

    1979-01-01

    This paper describes how the experience gained by the CEA (French Atomic Energy Commission) in design, construction and operation of pool type LMFBR, as well as in research an development, is used to establish rules for the analysis of mechanical structures at elevated temperatures. These rules are written by different working groups and approved by a committee named RAMSES. The working methods of the RAMSES committee are described. Some of the approved recommendations are presented. The ongoing work and futur topics are also described

  11. Effects of elevated CO2 and temperature on seed quality

    DEFF Research Database (Denmark)

    Hampton, John G; Boelt, Birte; Rolston, M P

    2013-01-01

    production on three seed quality components: seed mass, germination and seed vigour. In response to elevated CO2, seed mass has been reported to both increase and decrease in C3 plants, but not change in C4 plants. Increases are greater in legumes than non-legumes, and there is considerable variation among...... species. Seed mass increases may result in a decrease of seed nitrogen (N) concentration in non-legumes. Increasing temperature may decrease seed mass because of an accelerated growth rate and reduced seed filling duration, but lower seed mass does not necessarily reduce seed germination or vigour. Like...

  12. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature.

    Science.gov (United States)

    Gonzalez-Martinez, Alejandro; Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C M; Osorio, F; Gonzalez-Lopez, Jesus

    2015-01-01

    Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44-49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  13. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature

    Directory of Open Access Journals (Sweden)

    Alejandro Gonzalez-Martinez

    2015-01-01

    Full Text Available Identification of anaerobic ammonium oxidizing (anammox bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON and three full-scale bioreactors (anammox, CANON, and DEMON, was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature. The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C and hence a range of annealing temperatures of 44–49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  14. Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

    Science.gov (United States)

    Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

    2013-03-01

    The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

  15. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    Science.gov (United States)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  16. Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

    2012-08-31

    Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

  17. Evolution of the surface plasmon resonance of Au:TiO{sub 2} nanocomposite thin films with annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Universidade do Minho, Centro/Departamento de Física (Portugal); Buljan, M.; Sancho-Parramon, J.; Bogdanovic-Radovic, I.; Siketic, Z. [Rudjer Boskovic Institute (Croatia); Scherer, T.; Kübel, C. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility - KNMF (Germany); Bernstorff, S. [Elettra-Sincrotrone Trieste (Italy); Cavaleiro, A. [University of Coimbra, SEG-CEMUC, Mechanical Engineering Department (Portugal); Vaz, F.; Rolo, A. G. [Universidade do Minho, Centro/Departamento de Física (Portugal)

    2014-12-15

    This paper reports on the changes in the structural and morphological features occurring in a particular type of nanocomposite thin-film system, composed of Au nanoparticles (NPs) dispersed in a host TiO{sub 2} dielectric matrix. The structural and morphological changes, promoted by in-vacuum annealing experiments of the as-deposited thin films at different temperatures (ranging from 200 to 800 °C), resulted in a well-known localized surface plasmon resonance (LSPR) phenomenon, which gave rise to a set of different optical responses that can be tailored for a wide number of applications, including those for optical-based sensors. The results show that the annealing experiments enabled a gradual increase of the mean grain size of the Au NPs (from 2 to 23 nm), and changes in their distributions and separations within the dielectric matrix. For higher annealing temperatures of the as-deposited films, a broad size distribution of Au NPs was found (sizes up to 100 nm). The structural conditions necessary to produce LSPR activity were found to occur for annealing experiments above 300 °C, which corresponded to the crystallization of the gold NPs, with an average size strongly dependent on the annealing temperature itself. The main factor for the promotion of LSPR was the growth of gold NPs and their redistribution throughout the host matrix. On the other hand, the host matrix started to crystallize at an annealing temperature of about 500 °C, which is an important parameter to explain the shift of the LSPR peak position to longer wavelengths, i.e. a red-shift.

  18. Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

    International Nuclear Information System (INIS)

    Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

    1988-01-01

    A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

  19. Elevated temperature transmission Kikuchi diffraction in the SEM

    DEFF Research Database (Denmark)

    Fanta, Alice Bastos; Todeschini, Matteo; Burrows, Andrew

    2018-01-01

    heating associated with this system enables reliable TKD measurements at elevated temperatures without notable disturbance from infrared radiation. The dewetting of an Au thin film into Au nanoparticles upon heating is followed with orientation mapping in a temperature range between 20 °C and 900 °C....... The local thickness variation associated with the dewetting is observed qualitatively by observing the intensity of the transmitted beam, which decreases as the film thickness increases locally. The results of this study reveal that TKD is a well suited technique to study thin-film stability and solid state...... dewetting. Moreover, the outcome of this methodological study provides a baseline for further in-situ crystallographic studies of electron transparent samples in the SEM....

  20. Shock Response of Commercial Purity Polycrystalline Magnesium Under Uniaxial Strain at Elevated Temperatures

    Science.gov (United States)

    Wang, Tianxue; Zuanetti, Bryan; Prakash, Vikas

    2017-12-01

    In the present paper, results of plate impact experiments designed to investigate the onset of incipient plasticity in commercial purity polycrystalline magnesium (99.9%) under weak uniaxial strain compression and elevated temperatures up to melt are presented. The dynamic stress at yield and post yield of magnesium, as inferred from the measured normal component of the particle velocity histories at the free (rear) surface of the target plate, are observed to decrease progressively with increasing test temperatures in the range from 23 to 500 °C. At (higher) test temperatures in the range 500-610 °C, the rate of decrease of dynamic stress with temperature at yield and post-yield in the sample is observed to weaken. At still higher test temperatures (617 and 630 °C), a dramatic increase in dynamic yield as well as flow stress is observed indicating a change in dominant mechanism of plastic deformation as the sample approaches the melt point of magnesium at strain rates of 105/s. In addition to these measurements at the wavefront, the plateau region of the free surface particle velocity profiles indicates that the longitudinal (plastic) impedance of the magnesium samples decreases continuously as the sample temperatures are increased from room to 610 °C, and then reverses trend (indicating increasing material longitudinal impedance/strength) as the sample temperatures are increased to 617 and 630 °C. Electron back scattered diffraction analysis of the as-received and annealed pre-test magnesium samples reveal grain coarsening as well as grain re-orientation to a different texture during the heating process of the samples.

  1. Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

    International Nuclear Information System (INIS)

    Yen, C.-Y.; Jian, S.-R.; Chen, G.-J.; Lin, C.-M.; Lee, H.-Y.; Ke, W.-C.; Liao, Y.-Y.; Yang, P.-F.; Wang, C.-T.; Lai, Y.-S.; Jang, Jason S.-C.; Juang, J.-Y.

    2011-01-01

    ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 deg. C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 deg. C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 deg. C and 500 deg. C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.

  2. Post-deposition annealing temperature dependence TiO_2-based EGFET pH sensor sensitivity

    International Nuclear Information System (INIS)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-01-01

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO_2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO_2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO_2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  3. Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com [NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my [Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Herman, S. H., E-mail: hana1617@salam.uitm.edu.my [Core of Frontier Materials & Industry Applications, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  4. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  5. Annealing experiments on and high-temperature behavior of the superconductor yttrium barium copper oxide (YBa2Cu3Ox)

    NARCIS (Netherlands)

    Brabers, V.A.M.; Jonge, de W.J.M.; Bosch, L.A.; Steen, van der C.; de Groote, A.M.W.; Verheyen, A.A.; Vennix, C.W.H.M.

    1988-01-01

    The high temperature behaviour (300–1100 K) of the superconductor YBa2Cu3Ox has been studied by annealing experiments, thermal dilatation, thermogravimetry and measurements of the electrical resistance and thermoelectric power. For the fast oxidation process of this compound, reaction enthalpies

  6. [Effect of annealing temperature on the crystallization and spectroscopic response of a small-molecule semiconductor doped in polymer film].

    Science.gov (United States)

    Yin, Ming; Zhang, Xin-Ping; Liu, Hong-Mei

    2012-11-01

    The crystallization properties of the perylene (EPPTC) molecules doped in the solid film of the derivative of polyfluorene (F8BT) at different annealing temperatures, as well as the consequently induced spectroscopic response of the exciplex emission in the heterojunction structures, were studied in the present paper. Experimental results showed that the phase separation between the small and the polymer molecules in the blend film is enhanced with increasing the annealing temperature, which leads to the crystallization of the EPPTC molecules due to the strong pi-pi stacking. The size of the crystal phase increases with increasing the annealing temperature. However, this process weakens the mechanisms of the heterojunction configuration, thus, the total interfacial area between the small and the polymer molecules and the amount of exciplex are reduced significantly in the blend film. Meanwhile, the energy transfer from the polymer to the small molecules is also reduced. As a result, the emission from the exciplex becomes weaker with increasing the annealing temperature, whereas the stronger emission from the polymer molecules and from the crystal phase of the small molecules can be observed. These experimental results are very important for understanding and tailoring the organic heterojunction structures. Furthermore, this provides photophysics for improving the performance of photovoltaic or solar cell devices.

  7. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

    NARCIS (Netherlands)

    Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

    2013-01-01

    In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

  8. Rotating disk electrode system for elevated pressures and temperatures.

    Science.gov (United States)

    Fleige, M J; Wiberg, G K H; Arenz, M

    2015-06-01

    We describe the development and test of an elevated pressure and temperature rotating disk electrode (RDE) system that allows measurements under well-defined mass transport conditions. As demonstrated for the oxygen reduction reaction on polycrystalline platinum (Pt) in 0.5M H2SO4, the setup can easily be operated in a pressure range of 1-101 bar oxygen, and temperature of 140 °C. Under such conditions, diffusion limited current densities increase by almost two orders of magnitude as compared to conventional RDE setups allowing, for example, fuel cell catalyst studies under more realistic conditions. Levich plots demonstrate that the mass transport is indeed well-defined, i.e., at low electrode potentials, the measured current densities are fully diffusion controlled, while at higher potentials, a mixed kinetic-diffusion controlled regime is observed. Therefore, the setup opens up a new field for RDE investigations under temperature and current density conditions relevant for low and high temperature proton exchange membrane fuel cells.

  9. Rotating disk electrode system for elevated pressures and temperatures

    International Nuclear Information System (INIS)

    Fleige, M. J.; Wiberg, G. K. H.; Arenz, M.

    2015-01-01

    We describe the development and test of an elevated pressure and temperature rotating disk electrode (RDE) system that allows measurements under well-defined mass transport conditions. As demonstrated for the oxygen reduction reaction on polycrystalline platinum (Pt) in 0.5M H 2 SO 4 , the setup can easily be operated in a pressure range of 1–101 bar oxygen, and temperature of 140 °C. Under such conditions, diffusion limited current densities increase by almost two orders of magnitude as compared to conventional RDE setups allowing, for example, fuel cell catalyst studies under more realistic conditions. Levich plots demonstrate that the mass transport is indeed well-defined, i.e., at low electrode potentials, the measured current densities are fully diffusion controlled, while at higher potentials, a mixed kinetic-diffusion controlled regime is observed. Therefore, the setup opens up a new field for RDE investigations under temperature and current density conditions relevant for low and high temperature proton exchange membrane fuel cells

  10. Rotating disk electrode system for elevated pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Fleige, M. J.; Wiberg, G. K. H.; Arenz, M. [Department of Chemistry and Nano-Science Center, University of Copenhagen, Universitetsparken 5, 2100 Ø Copenhagen (Denmark)

    2015-06-15

    We describe the development and test of an elevated pressure and temperature rotating disk electrode (RDE) system that allows measurements under well-defined mass transport conditions. As demonstrated for the oxygen reduction reaction on polycrystalline platinum (Pt) in 0.5M H{sub 2}SO{sub 4}, the setup can easily be operated in a pressure range of 1–101 bar oxygen, and temperature of 140 °C. Under such conditions, diffusion limited current densities increase by almost two orders of magnitude as compared to conventional RDE setups allowing, for example, fuel cell catalyst studies under more realistic conditions. Levich plots demonstrate that the mass transport is indeed well-defined, i.e., at low electrode potentials, the measured current densities are fully diffusion controlled, while at higher potentials, a mixed kinetic-diffusion controlled regime is observed. Therefore, the setup opens up a new field for RDE investigations under temperature and current density conditions relevant for low and high temperature proton exchange membrane fuel cells.

  11. Rotating disk electrode system for elevated pressures and temperatures

    Science.gov (United States)

    Fleige, M. J.; Wiberg, G. K. H.; Arenz, M.

    2015-06-01

    We describe the development and test of an elevated pressure and temperature rotating disk electrode (RDE) system that allows measurements under well-defined mass transport conditions. As demonstrated for the oxygen reduction reaction on polycrystalline platinum (Pt) in 0.5M H2SO4, the setup can easily be operated in a pressure range of 1-101 bar oxygen, and temperature of 140 °C. Under such conditions, diffusion limited current densities increase by almost two orders of magnitude as compared to conventional RDE setups allowing, for example, fuel cell catalyst studies under more realistic conditions. Levich plots demonstrate that the mass transport is indeed well-defined, i.e., at low electrode potentials, the measured current densities are fully diffusion controlled, while at higher potentials, a mixed kinetic-diffusion controlled regime is observed. Therefore, the setup opens up a new field for RDE investigations under temperature and current density conditions relevant for low and high temperature proton exchange membrane fuel cells.

  12. LCF behavior of Zr-4 alloy at elevated temperature

    International Nuclear Information System (INIS)

    Ye Yuming; Cai Lixun

    2006-01-01

    A series of strain fatigue tests were carried out on small bugle-like slice-specimens of Zr-4 alloy at room temperature and 400 degree C. According to Elastic and Plastic Finite Element Analysis and assumption of local damage equivalence, a strain conversion equation was given to transform the transverse strain of the specimen to the axial strain. Based on the test results of the alloy and the strain conversion equation, fatigue life estimation equations of Zr-4alloy, or M-C (Manson-Coffin) models, were obtained. The results showed that, Zr-4 alloy had obvious cyclic hardening character during high amplitude strain at different temperatures, but showed reverse character during low amplitude strain. Elevated temperature lowered seriously the fatigue life of Zr-4 alloys, ann as the increasing of amplitude strain, temperature effect impaired gradually. Analysis showed that the prediction life by using M-C model based on the traditional strain conversion equation was quite conservative when axial strain amplitude was less than 5000 micro-strain. (authors)

  13. Annealing temperatures influence luminescence of YBO{sub 3}: Ce{sup 3+}, Yb{sup 3+} prepared by solvothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yue [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Hu, Xiaoyun, E-mail: hxy3275@nwu.edu.cn [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Zhan, Suchang; Sun, Xiao; Wang, Zhizhong; Miao, Tian; Miao, Hui [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Fan, Jun [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China)

    2014-08-01

    Near-infrared (NIR) quantum cutting (QC) YBO{sub 3}: Ce{sup 3+}, Yb{sup 3+} phosphors have been synthesized by solvothermal method with further heat treatment. The emission spectrum shows the Vis and NIR emission intensity of samples are both increasingly strong as annealing temperature rises when the annealing temperature is above 600 °C. Meanwhile the Vis emission of unannealed sample is observed. SEM images show that the sample annealed at different temperatures (200–900 °C) is mainly composed of nanosheets like potato chips, which is melt down granules after annealing treatment above 1000 °C.The crystal texture of all samples whether annealed or not is hexagonal through the analysis of XRD. The Raman and infrared spectrums indicate that the boron ions exist of BO{sub 4} units when the annealing temperature is above 600 °C. The infrared profile of unannealed sample shows that there are N–H units in the samples without annealing treatment. - Highlights: • The nanosheets like potato chips are synthesized by solvothermal method. • Annealing temperature is a great effect for luminescence of sample. • The boron ions exist of BO{sub 4} when the annealing temperature is above 600 °C, whose quantity determines the luminescent intensity. • According to the infrared profile of unannealed sample, there are N–H units, which are beneficial to the Vis emission.

  14. Uranium luminescence in La2 Zr2 O7 : effect of concentration and annealing temperature.

    Science.gov (United States)

    Mohapatra, M; Rajeswari, B; Hon, N S; Kadam, R M

    2016-12-01

    The speciation of a particular element in any given matrix is a prerequisite to understanding its solubility and leaching properties. In this context, speciation of uranium in lanthanum zirconate pyrochlore (La 2 Zr 2 O 7  = LZO), prepared by a low-temperature combustion route, was carried out using a simple photoluminescence lifetime technique. The LZO matrix is considered to be a potential ceramic host for fixing nuclear and actinide waste products generated during the nuclear fuel cycle. Special emphasis has been given to understanding the dynamics of the uranium species in the host as a function of annealing temperature and concentration. It was found that, in the LZO host, uranium is stabilized as the commonly encountered uranyl species (UO 2 2+ ) up to a heat treatment of 500 °C at the surface. Above 500 °C, the uranyl ion is diffused into the matrix as the more symmetric octahedral uranate species (UO 6 6- ). The uranate ions thus formed replace the six-coordinated 'Zr' atoms at regular lattice positions. Further, it was observed that concentration quenching takes place beyond 5 mol% of uranium doping. The mechanism of the quenching was found to be a multipolar interaction. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  15. Formation of interface traps in MOSFETs during annealing following low temperature irradiation

    International Nuclear Information System (INIS)

    Saks, N.S.; Griscom, D.L.; Klein, R.B.

    1988-01-01

    The formation of interface traps N/sub it/ has been studied in MOSFETs during isochronal annealing up to 350 K following exposure to ionizing radiation at 78K. Two distinct N/sub it/ formation processes are observed: (1) A small (1-10% of total) process occurs at 100-150K which the authors argue is caused by neutral atomic hydrogen, and (2) a second higher temperature (200-300K) process which accounts for most (>90%) of the N/sub it/ formation. The characteristics of the high temperature process support the proton (H/sup +/) model of N/sub it/ formation and are not in agreement with several other common models. In the second part of this paper, the authors compare charge pumping and inversion layer mobility techniques for measuring N/sub it/. The authors find that the mobility cannot be used to determine N/sub it/ at 78K (in contrast to its successful use at 295K), probably because of lateral non-uniformities (LNUs) in the large radiation-induced fixed oxide charge

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  17. The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

    International Nuclear Information System (INIS)

    Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

    2016-01-01

    CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

  18. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  20. Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

    Science.gov (United States)

    Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

    2018-04-01

    Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

  1. Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S.; Nagamuthu, S. [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India)

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

  2. Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

    International Nuclear Information System (INIS)

    Zheng Tianhang; Li Ziquan; Chen Jiankang; Shen Kai; Sun Kefei

    2006-01-01

    The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn 2 GeO 4 has been formed with (220) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761nm, which originate from the transition between oxygen vacancy (V o * ) and Zn vacancies (V Zn ), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn 2 GeO 4 from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn 2 GeO 4 :Mn

  3. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    International Nuclear Information System (INIS)

    Hu, Yu-Min; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

    2015-01-01

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu 2+ state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu 1+ ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites

  4. Void growth and coalescence in metals deformed at elevated temperature

    DEFF Research Database (Denmark)

    Klöcker, H.; Tvergaard, Viggo

    2000-01-01

    For metals deformed at elevated temperatures the growth of voids to coalescence is studied numerically. The voids are assumed to be present from the beginning of deformation, and the rate of deformation considered is so high that void growth is dominated by power law creep of the material, without...... any noticeable effect of surface diffusion. Axisymmetric unit cell model computations are used to study void growth in a material containing a periodic array of voids, and the onset of the coalescence process is defined as the stage where plastic flow localizes in the ligaments between neighbouring...... voids. The focus of the study is on various relatively high stress triaxialties. In order to represent the results in terms of a porous ductile material model a set of constitutive relations are used, which have been proposed for void growth in a material undergoing power law creep....

  5. Low cycle fatigue testing in flowing sodium at elevated temperatures

    International Nuclear Information System (INIS)

    Flagella, P.N.; Kahrs, J.R.

    1976-01-01

    The paper describes equipment developed to obtain low cycle strain-controlled fatigue data in flowing sodium at elevated temperatures. Operation and interaction of the major components of the system are discussed, including the calibration technique using remote strain measurement and control. Confirmation of in-air results using the special technique is demonstrated, with data presented for Type 316 stainless steel tested in high purity flowing sodium at 593 0 C. The fatigue life of the material in sodium is essentially the same as that obtained in air for delta epsilon/sub t/= 1 percent. On the other hand, sodium pre-exposure at 650 0 C for 5000 hours increased the fatigue life in-sodium by a factor of two, and sodium pre-exposure at 718 0 C for 5000 hours increased the fatigue life in-sodium by a factor of three

  6. Elevated Temperature Testing and Modeling of Advanced Toughened Ceramic Materials

    Science.gov (United States)

    Keith, Theo G.

    2005-01-01

    The purpose of this report is to provide a final report for the period of 12/1/03 through 11/30/04 for NASA Cooperative Agreement NCC3-776, entitled "Elevated Temperature Testing and Modeling of Advanced Toughened Ceramic Materials." During this final period, major efforts were focused on both the determination of mechanical properties of advanced ceramic materials and the development of mechanical test methodologies under several different programs of the NASA-Glenn. The important research activities made during this period are: 1. Mechanical properties evaluation of two gas-turbine grade silicon nitrides. 2) Mechanical testing for fuel-cell seal materials. 3) Mechanical properties evaluation of thermal barrier coatings and CFCCs and 4) Foreign object damage (FOD) testing.

  7. The Role of Annealing Temperature on Structural and Magnetic Properties of NdFeB Thin Films

    Directory of Open Access Journals (Sweden)

    A. Khanjani

    2016-06-01

    Full Text Available In the present research NdFeB thin films coupled with buffer and capping layer of W were formed on Si/SiO2 substrate by means of RF magnetron sputtering. The system was annealed at vaccum at different temperatures of 450, 500, 550,. 600 and 650 °C Phase analysis was carried out by XRD and it was found that NdFeB was formed without the formation of any kind of secondary phase. The cross sectional and grain size of the thin films were measured by scanning electron microscopy. Morphological studies were performed by atomic force microscopy. Magnetic properties of thin films including coercivity, saturation of magnetization and hysteresis area were evcaluated by vibrating sample magnetometer. It was found that by annealing at 400 °C the amorphous layer was formed.The highest intensity of peaks was formed at 550 °C and with an increase in temperature the intensity was declined. The grain size was increased by temperature and had an impact on the coercivity. With an increase of temperature up to 600 °C, perpendicular coercivity was increased and then by further increase of temperatute, coercivity was reduced. Based on the obtained data the temperature of 600 °C was selected as the optimum annealing temperature for reaching enhanced structural and magnetic feature.

  8. Effects of annealing and deforming temperature on microstructure and deformation characteristics of Ti-Ni-V shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    He Zhirong, E-mail: hezhirong01@163.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China); Liu Manqian [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer The deformation behaviors of annealed Ti-50.8Ni-0.5V shape memory alloy (SMA) were given. Black-Right-Pointing-Pointer The effect of annealing temperature on microstructure and deformation characteristics of Ti-50.8Ni-0.5V SMA was shown. Black-Right-Pointing-Pointer The effect of deforming temperature on deformation characteristics of Ti-50.8Ni-0.5V SMA was given. - Abstract: Effects of annealing temperature T{sub an} and deforming temperature T{sub d} on microstructure and deformation characteristics of Ti-50.8Ni-0.5V (atomic fraction, %) shape memory alloy were investigated by means of optical microscopy and tensile test. With increasing T{sub an}, the microstructure of Ti-50.8Ni-0.5V alloy wire changes from fiber style to equiaxed grain, and the recrystallization temperature of the alloy is about 580 Degree-Sign C; the critical stress for stress-induced martensite {sigma}{sub M} of the alloy decreases first and then increases, and the minimum value 382 MPa is got at T{sub an} = 450 Degree-Sign C; the residual strain {epsilon}{sub R} first increases, then decreases, and then increases, and its maximum value 2.5% is reached at T{sub an} = 450 Degree-Sign C. With increasing T{sub d}, a transformation from shape memory effect (SME) to superelasticity (SE) occurs in the alloy annealed at different temperatures, and the SME {yields} SE transformation temperature was affected by T{sub an}; the {sigma}{sub M} of the alloy increases linearly; the {epsilon}{sub R} of the alloy annealed at 350-600 Degree-Sign C decreases first and then tends to constant, while that of the alloy annealed at 650 Degree-Sign C and 700 Degree-Sign C decreases first and then increases. To get an excellent SE at room temperature for Ti-50.8Ni-0.5V alloy, T{sub an} should be 500-600 Degree-Sign C.

  9. Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

    International Nuclear Information System (INIS)

    Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

    2013-01-01

    The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t Co )] 6 multilayers (where t Co indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K eff ) increases significantly with an increase in t Co from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t Co , followed by a slight reduction at the highest Co thickness, t Co  = 0.6 nm. In order to explain the t Co dependence on K eff , the intrinsic PMA energy density (K i ) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K i value increases nearly linearly with the increase in t Co from 0.2 to 0.5 nm, followed by saturation at a higher t Co value of 0.6 nm. Owing to a close relationship between K i and the quality of the interfaces, these results indicate a similar t Co dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t Co dependence on the amount of the second phase. The K i value is nearly independent of the annealing temperature at t Co  ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C

  10. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  11. Regulation of Silk Material Structure by Temperature-Controlled Water Vapor Annealing

    Science.gov (United States)

    Hu, Xiao; Shmelev, Karen; Sun, Lin; Gil, Eun-Seok; Park, Sang-Hyug; Cebe, Peggy; Kaplan, David L.

    2011-01-01

    We present a simple and effective method to obtain refined control of the molecular structure of silk biomaterials through physical temperature-controlled water vapor annealing (TCWVA). The silk materials can be prepared with control of crystallinity, from a low content using conditions at 4°C (alpha-helix dominated silk I structure), to highest content of ~60% crystallinity at 100°C (beta-sheet dominated silk II structure). This new physical approach covers the range of structures previously reported to govern crystallization during the fabrication of silk materials, yet offers a simpler, green chemistry, approach with tight control of reproducibility. The transition kinetics, thermal, mechanical, and biodegradation properties of the silk films prepared at different temperatures were investigated and compared by Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), uniaxial tensile studies, and enzymatic degradation studies. The results revealed that this new physical processing method accurately controls structure, in turn providing control of mechanical properties, thermal stability, enzyme degradation rate, and human mesenchymal stem cell interactions. The mechanistic basis for the control is through the temperature controlled regulation of water vapor, to control crystallization. Control of silk structure via TCWVA represents a significant improvement in the fabrication of silk-based biomaterials, where control of structure-property relationships is key to regulating material properties. This new approach to control crystallization also provides an entirely new green approach, avoiding common methods which use organic solvents (methanol, ethanol) or organic acids. The method described here for silk proteins would also be universal for many other structural proteins (and likely other biopolymers), where water controls chain interactions related to material properties. PMID:21425769

  12. Behavior of annealed type 316 stainless steel under monotonic and cyclic biaxial loading at room temperature

    International Nuclear Information System (INIS)

    Ellis, J.R.; Robinson, D.N.; Pugh, C.E.

    1978-01-01

    This paper addresses the elastic-plastic behavior of type 316 stainless steel, one of the major structural alloys used in liquid-metal fast breeder reactor components. The study was part of a continuing program to develop a structural design technology applicable to advanced reactor systems. Here, behaviour of solution annealed material was examined through biaxial stress experiments conducted at room temperature under radial loadings (√3tau=sigma) in tension-torsion stress space. The effects of both stress limited monotonic loading and strain limited cyclic loading were determined on the size, shape and position of yield loci corresponding to small offset strain (10 microstrain) definition of yield. In the present work, the aim was to determine the extent to which the constitutive laws previously recommended for type 304 stainless steel are applicable to type 316 stainless steel. It was concluded that for the conditions investigated, the inelastic behavior of the two materials are qualitatively similar. Specifically, the von Mises yield criterion provides a reasonable approximation of initial yield behavior and the subsequent hardening behavior, at least under small offset definitions of yield, is to the first order kinematic in nature. (Auth.)

  13. Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which its resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  14. Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Tong Liuniu; Wang Yichao; He Xianmei; Han Huaibin; Xia Ailin; Hu Jinlian

    2012-01-01

    We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr 2+ ions substituting for Zn 2+ ions without any detectable secondary phase in as-synthesized Zn 0.97 Cr 0.03 O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M s as well as an increase of coercivity of H 2 -annealed Zn 0.97 Cr 0.03 O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H o may play an important role in the origin of H 2 -annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles. - Graphical Abstract: The H 2 -annealing induced enhancement of room temperature ferromagnetism in Cr-doped ZnO nanoparticles is observed. It is found that the field-cooled M-T curves can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. The PL data show evidence that the hydrogen related shallow donor defect or/and defect complexes may be responsible for it. Display Omitted Highlights: ► The H 2 -annealing induced a large enhancement of

  15. Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

    2014-03-15

    In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

  16. Influence of Step Annealing Temperature on the Microstructure and Pitting Corrosion Resistance of SDSS UNS S32760 Welds

    Science.gov (United States)

    Yousefieh, M.; Shamanian, M.; Saatchi, A.

    2011-12-01

    In the present work, the influence of step annealing heat treatment on the microstructure and pitting corrosion resistance of super duplex stainless steel UNS S32760 welds have been investigated. The pitting corrosion resistance in chloride solution was evaluated by potentiostatic measurements. The results showed that step annealing treatments in the temperature ranging from 550 to 1000 °C resulted in a precipitation of sigma phase and Cr2N along the ferrite/austenite and ferrite/ferrite boundaries. At this temperature range, the metastable pits mainly nucleated around the precipitates formed in the grain boundary and ferrite phase. Above 1050 °C, the microstructure contains only austenite and ferrite phases. At this condition, the critical pitting temperature of samples successfully arrived to the highest value obtained in this study.

  17. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    Science.gov (United States)

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  18. Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

    Science.gov (United States)

    Senol, Abdulkadir; Gulen, Mahir; Yildirim, Gurcan; Ozturk, Ozgur; Varilci, Ahmet; Terzioglu, Cabir; Belenli, Ibrahim

    2013-03-01

    In this study, we investigate the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto Soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In2O3:SnO2, 90:10 wt. %) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 ° C. Resistivity, Hall Effect, X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. Furthermore, mobility, carrier density and conductivity characteristics of the samples prepared are carried out as function of temperature in the range of 80-300 K at the magnetic field of 0.550 T. The results obtained show that all the properties depend strongly on the annealing temperature and in fact the film annealed at 400 ° C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.

  19. Defect formation in n-type InP at elevated temperatures of irradiation

    International Nuclear Information System (INIS)

    Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1990-01-01

    Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

  20. Annealing temperature effect on the properties of mercury-doped TiO{sub 2} films prepared by sol-gel dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Ben Sedrine, N. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Karyaoui, M. [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia)

    2011-04-15

    This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO{sub 2}). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

  1. Annealing temperature effect on the properties of mercury-doped TiO2 films prepared by sol-gel dip-coating technique

    International Nuclear Information System (INIS)

    Mechiakh, R.; Ben Sedrine, N.; Karyaoui, M.; Chtourou, R.

    2011-01-01

    This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO 2 ). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

  2. Creep of Posidonia Shale at Elevated Pressure and Temperature

    Science.gov (United States)

    Rybacki, E.; Herrmann, J.; Wirth, R.; Dresen, G.

    2017-12-01

    The economic production of gas and oil from shales requires repeated hydraulic fracturing operations to stimulate these tight reservoir rocks. Besides simple depletion, the often observed decay of production rate with time may arise from creep-induced fracture closure. We examined experimentally the creep behavior of an immature carbonate-rich Posidonia shale, subjected to constant stress conditions at temperatures between 50 and 200 °C and confining pressures of 50-200 MPa, simulating elevated in situ depth conditions. Samples showed transient creep in the semibrittle regime with high deformation rates at high differential stress, high temperature and low confinement. Strain was mainly accommodated by deformation of the weak organic matter and phyllosilicates and by pore space reduction. The primary decelerating creep phase observed at relatively low stress can be described by an empirical power law relation between strain and time, where the fitted parameters vary with temperature, pressure and stress. Our results suggest that healing of hydraulic fractures at low stresses by creep-induced proppant embedment is unlikely within a creep period of several years. At higher differential stress, as may be expected in situ at contact areas due to stress concentrations, the shale showed secondary creep, followed by tertiary creep until failure. In this regime, microcrack propagation and coalescence may be assisted by stress corrosion. Secondary creep rates were also described by a power law, predicting faster fracture closure rates than for primary creep, likely contributing to production rate decline. Comparison of our data with published primary creep data on other shales suggests that the long-term creep behavior of shales can be correlated with their brittleness estimated from composition. Low creep strain is supported by a high fraction of strong minerals that can build up a load-bearing framework.

  3. CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

    Science.gov (United States)

    Soylu, M.; Yazici, T.

    2017-12-01

    Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

  4. Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

    2012-01-01

    In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

  5. Synthesis of stable TiO2 nanotubes: effect of hydrothermal treatment, acid washing and annealing temperature.

    Science.gov (United States)

    López Zavala, Miguel Ángel; Lozano Morales, Samuel Alejandro; Ávila-Santos, Manuel

    2017-11-01

    Effect of hydrothermal treatment, acid washing and annealing temperature on the structure and morphology of TiO 2 nanotubes during the formation process was assessed. X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy analysis were conducted to describe the formation and characterization of the structure and morphology of nanotubes. Hydrothermal treatment of TiO 2 precursor nanoparticles and acid washing are fundamental to form and define the nanotubes structure. Hydrothermal treatment causes a change in the crystallinity of the precursor nanoparticles from anatase phase to a monoclinic phase, which characterizes the TiO 2 nanosheets structure. The acid washing promotes the formation of high purity nanotubes due to Na + is exchanged from the titanate structure to the hydrochloric acid (HCl) solution. The annealing temperature affects the dimensions, structure and the morphology of the nanotubes. Annealing temperatures in the range of 400 °C and 600 °C are optimum to maintain a highly stable tubular morphology of nanotubes. Additionally, nanotubes conserve the physicochemical properties of the precursor Degussa P25 nanoparticles. Temperatures greater than 600 °C alter the morphology of nanotubes from tubular to an irregular structure of nanoparticles, which are bigger than those of the precursor material, i.e., the crystallinity turn from anatase phase to rutile phase inducing the collapse of the nanotubes.

  6. Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

    Directory of Open Access Journals (Sweden)

    Samia Ahmed Nadi

    2014-01-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

  7. Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2017-04-01

    Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

  8. Influence of annealing temperature and organic dyes as sensitizers on sol–gel derived TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Mamta; Abbas, Saeed J.; Tripathi, S.K., E-mail: surya@pu.ac.in

    2014-09-15

    Highlights: • Preparation of rice shaped TiO{sub 2} nanorods with anatase structure by sol–gel method. • Effect of post deposition annealing on structural properties of TiO{sub 2} is studied. • Unlike individual dye, absorption of Cocktail dye with TiO{sub 2} nanorods is broader. • Cocktail dye sensitized TiO{sub 2} film has more photosensitivity than EY, RB, AO. • Increase in photosensitivity up to optimum temperature is due to hole passivation. - Abstract: Five different organic dyes and reported cocktail dye composed of these dyes are used as sensitizer for titanium dioxide (TiO{sub 2}). Rice shaped (TiO{sub 2}) nanorods are prepared by using sol–gel method. The films annealed at 673 K and above are crystalline with anatase structure. The effect of post annealing temperature is studied on various structural parameters. Cocktail dye shows broader absorption with TiO{sub 2} nanorods in visible region compared with five dyes. Maximum photosensitivity is obtained with RhB dye, followed by FGF and cocktail dye sensitized TiO{sub 2} films. Increase in photosensitivity is due to passivating some hole traps on the surface up to some optimum temperature, above which photosensitivity decreases due to a higher photo activation energy compared to dark conductivity in low temperature region and also may be due to damage of the dye molecule. This work may prove its worth for understanding the electron transport in dye sensitized nanodevices.

  9. Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

    CERN Document Server

    Sobolev, N A; Nikolaev, Y A

    2001-01-01

    A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

  10. Physical mechanisms related to the degradation of LPCVD tungsten contacts at elevated temperatures

    International Nuclear Information System (INIS)

    Shenai, K.; Lewis, N.; Smith, G.A.; McConnell, M.D.; Burrell, M.

    1990-01-01

    The thermal stability of LPCVD (low pressure chemical vapor deposition) tungsten contacts to n-type silicon is studied at elevated temperatures in excess of 650 degrees C. The process variants studied include silicon doping, tungsten thickness, and post tungsten deposition dielectric stress temperatures. Detailed measurements of Kelvin contact resistance were made at room temperature as well as at elevated temperatures up to 165 degrees C. The tungsten contact resistance degradation at elevated stress temperatures is correlated with worm hole formation in silicon and the formation and diffusion of tungsten silicide. Extensive analytical measurements were used to characterize the material transformation at elevated stress temperatures to understand the physical mechanisms causing contact degradation

  11. Remarkably Enhanced Room-Temperature Hydrogen Sensing of SnO₂ Nanoflowers via Vacuum Annealing Treatment.

    Science.gov (United States)

    Liu, Gao; Wang, Zhao; Chen, Zihui; Yang, Shulin; Fu, Xingxing; Huang, Rui; Li, Xiaokang; Xiong, Juan; Hu, Yongming; Gu, Haoshuang

    2018-03-23

    In this work, SnO₂ nanoflowers synthesized by a hydrothermal method were employed as hydrogen sensing materials. The as-synthesized SnO₂ nanoflowers consisted of cuboid-like SnO₂ nanorods with tetragonal structures. A great increase in the relative content of surface-adsorbed oxygen was observed after the vacuum annealing treatment, and this increase could have been due to the increase in surface oxygen vacancies serving as preferential adsorption sites for oxygen species. Annealing treatment resulted in an 8% increase in the specific surface area of the samples. Moreover, the conductivity of the sensors decreased after the annealing treatment, which should be attributed to the increase in electron scattering around the defects and the compensated donor behavior of the oxygen vacancies due to the surface oxygen adsorption. The hydrogen sensors of the annealed samples, compared to those of the unannealed samples, exhibited a much higher sensitivity and faster response rate. The sensor response factor and response rate increased from 27.1% to 80.2% and 0.34%/s to 1.15%/s, respectively. This remarkable enhancement in sensing performance induced by the annealing treatment could be attributed to the larger specific surface areas and higher amount of surface-adsorbed oxygen, which provides a greater reaction space for hydrogen. Moreover, the sensors with annealed SnO₂ nanoflowers also exhibited high selectivity towards hydrogen against CH₄, CO, and ethanol.

  12. Calculation of temperature fields formed in induction annealing of closing welded joint of jacket of steam generator for WWER 440 type nuclear power plant using ICL 2960 computer

    International Nuclear Information System (INIS)

    Sajnar, P.; Fiala, J.

    1983-01-01

    The problems are discussed of the mathematical description and simulation of temperature fields in annealing the closing weld of the steam generator jacket of the WWER 440 nuclear power plant. The basic principles are given of induction annealing, the method of calculating temperature fields is indicated and the mathematical description is given of boundary conditions on the outer and inner surfaces of the steam generator jacket for the computation of temperature fields arising during annealing. Also described are the methods of determining the temperature of exposed parts of heat exchange tubes inside the steam generator and the technical possibilities are assessed of the annealing equipment from the point of view of its computer simulation. Five alternatives are given for the computation of temperature fields in the area around the weld for different boundary conditions. The values are given of maximum differences in the temperatures of the metal in the annealed part of the steam generator jacket which allow the assessment of individual computation variants, this mainly from the point of view of observing the course of annealing temperature in the required width of the annealed jacket of the steam generator along both sides of the closing weld. (B.S.)

  13. Low-temperature electron properties of Heusler alloys Fe2VAl and Fe2CrAl: Effect of annealing

    International Nuclear Information System (INIS)

    Podgornykh, S. M.; Svyazhin, A. D.; Shreder, E. I.; Marchenkov, V. V.; Dyakina, V. P.

    2007-01-01

    We present the results of measurements of low-temperature heat capacity, as well as electrical and magnetic properties of Heusler alloys Fe 2 VAl and Fe 2 CrAl prepared in different ways using various heat treatment regimes. The density of states at the Fermi level is estimated. A contribution of ferromagnetic clusters in the low-temperature heat capacity of the Fe 2 VAl alloy is detected. The change in the number and volume of clusters as a result of annealing of an alloy affects the behavior of their low-temperature heat capacity, resistivity, and magnetic properties

  14. Nanosecond laser ablated copper superhydrophobic surface with tunable ultrahigh adhesion and its renewability with low temperature annealing

    Science.gov (United States)

    He, An; Liu, Wenwen; Xue, Wei; Yang, Huan; Cao, Yu

    2018-03-01

    Recently, metallic superhydrophobic surfaces with ultrahigh adhesion have got plentiful attention on account of their significance in scientific researches and industrial applications like droplet transport, drug delivery and novel microfluidic devices. However, the long lead time and transience hindered its in-depth development and industrial application. In this work, nanosecond laser ablation was carried out to construct grid of micro-grooves on copper surface, whereafter, by applying fast ethanol assisted low-temperature annealing, we obtained surface with superhydrophobicity and ultrahigh adhesion within hours. And the ultrahigh adhesion force was found tunable by varying the groove spacing. Using ultrasonic cleaning as the simulation of natural wear and tear in service, the renewability of superhydrophobicity was also investigated, and the result shows that the contact angle can rehabilitate promptly by the processing of ethanol assisted low-temperature annealing, which gives a promising fast and cheap circuitous strategy to realize the long wish durable metallic superhydrophobic surfaces in practical applications.

  15. Thermal annealing of high dose radiation induced damage at room temperature in alkali halides. Stored energy, thermoluminiscence and colouration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminiscence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminiscence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KCl samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose. Capacity of alkali halides to sotore energy by irradiation increases as the cation size decreases. It appears that most of the observed release is not related to annealing processes of the radiation induced anion Frenkel pairs. The existence of damage in the cation sublattice with which this energy release might be related is considered. (auth.)

  16. Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

    International Nuclear Information System (INIS)

    Santos-Cruz, J.; Torres-Delgado, G.; Castanedo-Perez, R.; Jimenez-Sandoval, S.; Jimenez-Sandoval, O.; Zuniga-Romero, C.I.; Marquez Marin, J.; Zelaya-Angel, O.

    2005-01-01

    The effect of the annealing temperature (T a ) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10 -4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

  17. Analyses of residual iron in carbon nanotubes produced by camphor/ferrocene pyrolysis and purified by high temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Antunes, E.F., E-mail: ericafa@las.inpe.br [Instituto Tecnologico de Aeronautica (ITA), Praca Marechal Eduardo Gomes, 50, CEP 12.228-900, Sao Jose dos Campos, SP (Brazil); Instituto Nacional de Pesquisas Espaciais (INPE), Av. dos Astronautas, 1758, CEP 12.227-010, Sao Jose dos Campos, SP (Brazil); Resende, V.G. de; Mengui, U.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Av. dos Astronautas, 1758, CEP 12.227-010, Sao Jose dos Campos, SP (Brazil); Cunha, J.B.M. [Universidade Federal do Rio Grande do Sul (UFRGS), Av. Bento Goncalves, 9500, CEP 91.501-970, Porto Alegre, RS (Brazil); Corat, E.J.; Massi, M. [Instituto Nacional de Pesquisas Espaciais (INPE), Av. dos Astronautas, 1758, CEP 12.227-010, Sao Jose dos Campos, SP (Brazil)

    2011-07-01

    A detailed analysis of iron-containing phases in multiwall carbon nanotube (MWCNT) powder was carried out. The MWCNTs were produced by camphor/ferrocene and purified by high temperature annealing in an oxygen-free atmosphere (N{sub 2} or VC). Thermogravimetric analysis, Moessbauer spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy enabled the evaluation of the residual iron in MWCNTs after purification. The VC treatments provided MWCNTs with a purity degree higher than 99%. Moreover, Raman spectroscopy revealed a significant improvement in graphitic ordering after thermal annealing. A brief description of the mechanism of iron removal was included. We highlight the mobility of iron atoms through graphitic sheets and the large contact angle of iron clusters formed on MWCNT surfaces at high temperatures.

  18. Cyclic deformation behavior and microstructural changes of 12Cr-WMoV martensitic stainless steel at elevated temperature

    International Nuclear Information System (INIS)

    Song, X.L.; Yang, G.X.; Zhou, S.L.; Fan, H.; Yang, S.S.; Zhu, J.W.; Liu, Y.N.

    2008-01-01

    Strain-controlled uniaxial push-pull low-cycle fatigue tests were performed on 12Cr-WMoV martensitic stainless steel at room temperature and 600 deg. C. Specimens were tested at total strain amplitudes of 1.5% and 0.8% with a constant strain rate of 0.004 s -1 . The microstructures of the specimens subjected to different cycles were studied using transmission electron microscopy (TEM). Cyclic softening was observed at room temperature and 600 deg. C. TEM investigations revealed that cellular structures of dislocations were formed in the fatigued specimens at both room and elevated temperatures. Dynamic recovery has a very significant effect on the dislocation structure of specimens tested at elevated temperature. The thickness and density of the dislocation cell walls formed in specimens cycled at 600 deg. C are less than that at room temperature. Cellular dislocation structures formed during cycling are annihilated in the specimens subjected to 1 h annealing at 600 deg. C

  19. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    Science.gov (United States)

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

  20. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

    Science.gov (United States)

    Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

    2017-09-15

    High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In 2 Se 3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In 2 Se 3 vapor and produce the high uniformity In 2 Se 3 nanowires. The in situ annealing TEM is used to realize the effect of heating

  1. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  2. Selective solar absorber emittance measurement at elevated temperature

    Science.gov (United States)

    Giraud, Philémon; Braillon, Julien; Raccurt, Olivier

    2017-06-01

    Durability of solar components for CSP (Concentrated Solar Power Plant) technologies is a key point to lower cost and ensure their large deployment. These technologies concentrated the solar radiation by means of mirrors on a receiver tube where it is collected as thermal energy. The absorbers are submitted to strong environmental constraints and the degradation of their optical properties (emittance and solar absorbance) have a direct impact on performance. The characterization of a material in such condition is complicated and requires advanced apparatuses, and different measurement methods exist for the determination of the two quantities of relevance regarding an absorber, which are its emittance and its solar absorbance. The objective is to develop new optical equipment for measure the emittance of this solar absorber at elevated temperature. In this paper, we present an optical bench developed for emittance measurement on absorbers is conditions of use. Results will be shown, with a discussion of some factors of influence over this measurement and how to control them.

  3. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  4. STRUCTURAL EVOLUTION AND COMPOSITION CHANGE IN THE SURFACE REGION OF POLYPROPYLENE/CLAY NANOCOMPOSITES ANNEALED AT HIGH TEMPERATURES

    Institute of Scientific and Technical Information of China (English)

    唐涛

    2009-01-01

    A model experiment was done to clear the formation mechanism of protective layers during combustion of polypropylene(PP)/organically modified montmorillonite(OMMT) nanocomposites.The investigation was focused on the effects of annealing temperature on the structural changes and protective layer formation.The decomposition of OMMT and degradation of PP/OMMT nanocomposites were characterized by means of thermogravimetric analysis(TGA).The structural evolution and composition change in the surface region of...

  5. A mutant screening method by critical annealing temperature-PCR for site-directed mutagenesis.

    Science.gov (United States)

    Liu, Ying; Wu, Ting; Song, Jian; Chen, Xuelian; Zhang, Yu; Wan, Yu

    2013-03-11

    Distinguishing desired mutants from parental templates and undesired mutants is a problem not well solved in Quikchange™ mutagenesis. Although Dpn I digestion can eliminate methylated parental (WT) DNA, the efficiency is not satisfying due to the existence of hemi-methylated DNA in the PCR products, which is resistant to Dpn I. The present study designed a novel critical annealing temperature (T(c))-PCR to replace Dpn I digestion for more perfect mutant distinguishing, in which part-overlapping primers containing mutation(s) were used to reduce initial concentration of template DNA in mutagenic PCR. A T(c)-PCR with the same mutagenic primers was performed without Dpn I digestion. The T(c) for each pair of the primers was identified by gradient PCR. The relationship between PCR-identified T(c) and T(m) of the primers was analyzed and modeled with correlation and regression. Gradient PCR identified a T(c) for each of 14 tested mutagenic primers, which could discriminate mismatched parental molecules and undesired mutants from desired mutants. The PCR-identified T(c) was correlated to the primer's T(m) (r = 0.804, P<0.0001). Thus, in practical applications, the T(c) can be easily calculated with a regression equation, T(c)= 48.81 + 0.253*T(m). The new protocol introduced a novel T(c)-PCR method for mutant screening which can more efficiently and accurately select against parental molecules and undesired mutations in mutagenic sequence segments.

  6. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  7. Effect of low temperature annealing on magneto-caloric effect of Ni–Mn–Sn–Al ferromagnetic shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Sandeep [Haldia Institute of Technology, Haldia 721657, West Bengal (India); LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India); Stern-Taulats, Enric; Mañosa, Lluís [Departament d’Estructura i Constituents de la Matèria, Facultat de Física, Universitat de Barcelona, 08028 Barcelona, Catalonia (Spain); Mukhopadhyay, P.K., E-mail: pkm@bose.res.in [LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India)

    2015-08-25

    Highlights: • Magnetic properties of the system changed after secondary heat treatment. • MCE was enhanced after Al was partially replaced with Sn in Ni–Mn–Al system. • Suitable heat treatment further increased overall MCE in the sample. • Change in magnetic properties occurred due to change in atomic ordering. - Abstract: We studied the effect of low temperature annealing on the atomic ordering and consequent changes in the magnetization and magnetocaloric effect of the sample. The annealing at lower temperatures initially decreased the magnetization and magnetocaloric effect in the sample, but at higher annealing temperatures both increased. The changes in magnetization and magnetocaloric effect arise from the change in atomic ordering. We have shown that post quenching heat treatment offers easy way of optimizing the alloy for magnetocaloric effect. In order to verify that there was no overestimation in the measurement of magnetocaloric effect we also performed an infield calorimetric measurements and compared them with those from the magnetization measurements. We did not find remarkable difference between them.

  8. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  9. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  10. Estimation of effective temperatures in quantum annealers for sampling applications: A case study with possible applications in deep learning

    Science.gov (United States)

    Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

    2016-08-01

    An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to speed up this task, but several limitations still bar these state-of-the-art technologies from being used effectively. One of the main limitations is that, while the device may indeed sample from a Boltzmann-like distribution, quantum dynamical arguments suggest it will do so with an instance-dependent effective temperature, different from its physical temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the learning of a special class of a restricted Boltzmann machine embedded on quantum hardware, which can serve as a building block for deep-learning architectures. We also provide a comparison to k -step contrastive divergence (CD-k ) with k up to 100. Although assuming a suitable fixed effective temperature also allows us to outperform one-step contrastive divergence (CD-1), only when using an instance-dependent effective temperature do we find a performance close to that of CD-100 for the case studied here.

  11. Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

    International Nuclear Information System (INIS)

    Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

    2007-01-01

    Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

  12. The Effect of Elevated Temperature on Concrete Materials and Structures - a Literature Review.

    Energy Technology Data Exchange (ETDEWEB)

    Naus, Dan J [ORNL

    2006-03-01

    The objective of this limited study was to provide an overview of the effects of elevated temperature on the behavior of concrete materials and structures. In meeting this objective the effects of elevated temperatures on the properties of ordinary Portland cement concrete constituent materials and concretes are summarized. The effects of elevated temperature on high-strength concrete materials are noted and their performance compared to normal strength concretes. A review of concrete materials for elevated-temperature service is presented. Nuclear power plant and general civil engineering design codes are described. Design considerations and analytical techniques for evaluating the response of reinforced concrete structures to elevated-temperature conditions are presented. Pertinent studies in which reinforced concrete structural elements were subjected to elevated temperatures are described.

  13. The Effect of Elevated Temperature on Concrete Materials and Structures - a Literature Review

    International Nuclear Information System (INIS)

    Naus, Dan J.

    2006-01-01

    The objective of this limited study was to provide an overview of the effects of elevated temperature on the behavior of concrete materials and structures. In meeting this objective the effects of elevated temperatures on the properties of ordinary Portland cement concrete constituent materials and concretes are summarized. The effects of elevated temperature on high-strength concrete materials are noted and their performance compared to normal strength concretes. A review of concrete materials for elevated-temperature service is presented. Nuclear power plant and general civil engineering design codes are described. Design considerations and analytical techniques for evaluating the response of reinforced concrete structures to elevated-temperature conditions are presented. Pertinent studies in which reinforced concrete structural elements were subjected to elevated temperatures are described.

  14. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  15. Structural properties of WO{sub 3} dependent of the annealing temperature deposited by hot-filament metal oxide deposition

    Energy Technology Data Exchange (ETDEWEB)

    Flores M, J. E. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica, Av. San Claudio y 18 Sur, Ciudad Universitaria, Col. Jardines de San Manuel, 72570 Puebla (Mexico); Diaz R, J. [IPN, Centro de Investigacion en Biotecnologia Aplicada, Ex-Hacienda de San Molino Km 1.5 Tepetitla, 90700 Tlaxcala (Mexico); Balderas L, J. A., E-mail: eflores@ece.buap.mx [IPN, Unidad Profesional Interdisciplinaria de Biotecnologia, Av. Acueducto s/n, Col. Barrio la Laguna, 07340 Mexico D. F. (Mexico)

    2012-07-01

    In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO{sub 3} that has been grown by hot-filament metal oxide deposition. The chemical stoichiometry was determined by X-ray photoelectron spectroscopy. By X-ray diffraction obtained that the as-deposited WO{sub 3} films present mainly monoclinic crystalline phase. WO{sub 3} optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO{sub 3} from 100 to 500 C. The Raman spectrum of the as-deposited WO{sub 3} film shows four intense peaks that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching ({upsilon}) and W-O bending ({delta}) modes, respectively, which enhanced and increased their intensity with the annealing temperature. (Author)

  16. Effects of anodizing conditions and annealing temperature on the morphology and crystalline structure of anodic oxide layers grown on iron

    Science.gov (United States)

    Pawlik, Anna; Hnida, Katarzyna; Socha, Robert P.; Wiercigroch, Ewelina; Małek, Kamilla; Sulka, Grzegorz D.

    2017-12-01

    Anodic iron oxide layers were formed by anodization of the iron foil in an ethylene glycol-based electrolyte containing 0.2 M NH4F and 0.5 M H2O at 40 V for 1 h. The anodizing conditions such as electrolyte composition and applied potential were optimized. In order to examine the influence of electrolyte stirring and applied magnetic field, the anodic samples were prepared under the dynamic and static conditions in the presence or absence of magnetic field. It was shown that ordered iron oxide nanopore arrays could be obtained at lower anodizing temperatures (10 and 20 °C) at the static conditions without the magnetic field or at the dynamic conditions with the applied magnetic field. Since the as-prepared anodic layers are amorphous in nature, the samples were annealed in air at different temperatures (200-500 °C) for a fixed duration of time (1 h). The morphology and crystal phases developed after anodization and subsequent annealing were characterized using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The results proved that the annealing process transforms the amorphous layer into magnetite and hematite phases. In addition, the heat treatment results in a substantial decrease in the fluorine content and increase in the oxygen content.

  17. High temperature annealing effects on chromel (Ni90Cr10) thin films and interdiffusion study for sensing applications

    International Nuclear Information System (INIS)

    Datta, Arindom; Cheng Xudong; Miller, Michael A.; Li Xiaochun

    2008-01-01

    Metal embedded thin film thermocouples are very attractive for various applications in harsh environments. One promising technique to embed thin films micro sensors is diffusion bonding, which requires high temperatures and pressures typically in a vacuum. In this study, high temperature annealing effects on chromel (Ni90Cr10) thin film, an important sensor material as one of the components in type K thermocouple, were investigated in a diffusion bonding environment. Annealing was carried out at 800 deg. C for one hour in a diffusion bonder under vacuum without applying pressure. Under such conditions; surface, interface and interdiffusion phenomena were investigated using different characterization techniques including X-ray Diffraction, X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy, and Energy Dispersive Spectroscopy. Results indicate that the present combination of dielectrics is quite reliable and Ni90Cr10 films of 500 nm thickness can be used for applications at least up to 800 deg. C due to a protective thin chromium oxide layer formation on top of the sensor film during annealing

  18. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  19. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  20. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    International Nuclear Information System (INIS)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-01-01

    A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

  1. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  2. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  3. Thermal annealing of high dose radiation induced damage at room temperature in alkaline. Stored energy, thermoluminescence and coloration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminescence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminescence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KC1 samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose.Capacity of alkali halides to store energy by irradiation increases as the cation size decreases. (Author) 51 refs

  4. Compositional changes at the interface between thorium-doped uranium dioxide and zirconium due to high-temperature annealing

    Science.gov (United States)

    Youn, Young-Sang; Lee, Jeongmook; Kim, Jandee; Kim, Jong-Yun

    2018-06-01

    Compositional changes at the interface between thorium-doped uranium dioxide (U0.97Th0.03O2) and Zr before and after annealing at 1700 °C for 18 h were studied by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. At room temperature, the U0.97Th0.03O2 pellet consisted of hyperstoichiometric UO2+x with UO2 and ThO2, and the Zr sample contained Zr with ZrO2. After annealing, the former contained stoichiometric UO2 with ThO2 and the latter consisted of ZrO2 along with ZrO2·2H2O.

  5. Change of Composition in Metallic Fuel Slug of U-Zr Alloy from High-Temperature Annealing

    Energy Technology Data Exchange (ETDEWEB)

    Youn, Young Sang; Lee, Jeong Mook; Kim, Jong Yun; Kim, Jong Hwan; Song, Hoon [KAERI, Daejeon (Korea, Republic of)

    2016-09-15

    The U–Zr alloy is a candidate for fuel to be used as metallic fuel in sodium-cooled fast reactors (SFRs). Its chemical composition before and after annealing at the operational temperature of SFRs (610 .deg. C) was investigated using X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The original alloy surface contained uranium oxides with the U(IV) and U(VI) oxidation states, Zr{sub 2}O{sub 3}, and a low amount of uranium metal. After annealing at 610 .deg. C, the alloy was composed of uranium metal, uranium carbide, uranium oxide with the U(V) valence state, zirconium metal, and amorphous carbon. Meanwhile, X-ray diffraction data indicate that the bulk composition of the alloy remained unchanged.

  6. Repair behavior of He+-irradiated W-Y2O3 composites after different temperature-isochronal annealing experiments

    Science.gov (United States)

    Yao, Gang; Tan, Xiao-Yue; Luo, Lai-Ma; Zan, Xiang; Liu, Jia-Qin; Xu, Qiu; Zhu, Xifao-Yong; Wu, Yu-Cheng

    2018-01-01

    W-2%Y2O3 composites were prepared by wet chemical and powder metallurgy. Commercial roll tungsten was selected as a comparative sample in the He+ irradiation experiment. The experiment was conducted under He+ beam energy of 50 eV, irradiation dose of approximately 9.9 × 1024 ions/m2, and temperature of 1503-1553 K. The samples were annealed at 1173, 1373, and 1573 K for 1 h. The irradiation surface was observed in situ. The W-2%Y2O3 composites and pure tungsten displayed different grain orientation damage morphologies. In addition, the fuzzy structure was more likely to converge densely at the phase interface. Annealing repairs material surface irradiation damage, whereas the phase interface acts as a He+ migration channel.

  7. Change of Composition in Metallic Fuel Slug of U-Zr Alloy from High-Temperature Annealing

    International Nuclear Information System (INIS)

    Youn, Young Sang; Lee, Jeong Mook; Kim, Jong Yun; Kim, Jong Hwan; Song, Hoon

    2016-01-01

    The U–Zr alloy is a candidate for fuel to be used as metallic fuel in sodium-cooled fast reactors (SFRs). Its chemical composition before and after annealing at the operational temperature of SFRs (610 .deg. C) was investigated using X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The original alloy surface contained uranium oxides with the U(IV) and U(VI) oxidation states, Zr 2 O 3 , and a low amount of uranium metal. After annealing at 610 .deg. C, the alloy was composed of uranium metal, uranium carbide, uranium oxide with the U(V) valence state, zirconium metal, and amorphous carbon. Meanwhile, X-ray diffraction data indicate that the bulk composition of the alloy remained unchanged

  8. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-01-01

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm 2 at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe 2 O 3 ) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the

  9. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Zhu, Tao; Yong, Siek-Ting [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chan, Eng Seng [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia)

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  10. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  11. Reduction in L10 phase transition temperature of PLD grown FePt thin by pre-annealing pulse laser exposure

    International Nuclear Information System (INIS)

    Wang, Y.; Rawat, R.S.; Bisht, A.

    2013-01-01

    A pre-annealing atmospheric pulsed laser exposure was applied to decrease the phase transition (from chemically disordered A1 phase to chemically ordered L1 0 phase) temperature of FePt nano-particles on a Si (100) substrate. Different pre-annealing laser energy densities of 0.024 and 0.079 J/cm2 were utilized to expose the pulsed laser deposition (PLD) FePt thin film samples under atmospheric conditions. Subsequently, FePt thin film samples were annealed at different temperatures of 300 and 400 ºC to observe the influence of laser exposure on the phase transition temperature. The phase transition temperature was decreased from conventional 600 ºC to 400 ºC by one shot pre-annealing atmospheric pulsed laser exposure. (author)

  12. The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells.

    Science.gov (United States)

    Qiu, Xiaofeng; Chen, Ling; Gong, Haibo; Zhu, Min; Han, Jun; Zi, Min; Yang, Xiaopeng; Ji, Changjian; Cao, Bingqiang

    2014-09-15

    Arrays of ZnO/CdS/CdSe core/shell nanocables with different annealing temperatures have been investigated for CdS/CdSe quantum dots sensitized solar cells (QDSSCs). CdS/CdSe quantum dots were synthesized on the surface of ZnO nanorods that serve as the scaffold via a simple ion-exchange approach. The uniform microstructure was verified by scanning electron microscope and transmission electron microscope. UV-Visible absorption spectrum and Raman spectroscopy analysis indicated noticeable influence of annealing temperature on the interface structural and optical properties of the CdS/CdSe layers. Particularly, the relationship between annealing temperatures and photovoltaic performance of the corresponding QDSSCs was investigated employing photovoltaic conversion, quantum efficiency and electrochemical impedance spectra. It is demonstrated that higher cell efficiency can be obtained by optimizing the annealing temperature through extending the photoresponse range and improving QD layer crystal quality. Copyright © 2014 Elsevier Inc. All rights reserved.

  13. Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

    International Nuclear Information System (INIS)

    Javier-Ccallata, Henry; Filho, Luiz Tomaz; Sartorelli, Maria L.; Watanabe, Shigueo

    2013-01-01

    Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe 2+ and Fe 3+ . •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe 3+ . -- Abstract: Natural silicate mineral of pumpellyite, Ca 2 MgAl 2 (SiO 4 )(Si 2 O 7 )(OH) 2 ·(H 2 O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe 2+ and Fe 3+ . The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe 2+ → e − + Fe 3+ . On the other hand, EPR measurements reveal six lines of Mn 2+ , and satellites due to hyperfine interaction, superimposed on the signal of Fe 3+ around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe 3+ hides all Mn 2+ lines. The strong growth of this signal indicates that the transitions are due to Fe 3+ dipole–dipole interactions

  14. Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

    Energy Technology Data Exchange (ETDEWEB)

    Javier-Ccallata, Henry, E-mail: henrysjc@gmail.com [Escuela de Ingeniería Electrónica y Telecomunicaciones, Universidad Alas Peruanas Filial Arequipa, Urb. D. A. Carrión G-14, J. L. Bustamante y Rivero, Arequipa (Peru); Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Filho, Luiz Tomaz [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil); Faculdade de Tecnologia e Ciências Exatas, Universidade São Judas Tadeu, Rua Taquari 546, São Paulo, SP (Brazil); Sartorelli, Maria L. [Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Watanabe, Shigueo [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil)

    2013-09-15

    Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe{sup 2+}and Fe{sup 3+}. •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe{sup 3+}. -- Abstract: Natural silicate mineral of pumpellyite, Ca{sub 2}MgAl{sub 2}(SiO{sub 4})(Si{sub 2}O{sub 7})(OH){sub 2}·(H{sub 2}O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe{sup 2+} and Fe{sup 3+}. The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe{sup 2+} → e{sup −} + Fe{sup 3+}. On the other hand, EPR measurements reveal six lines of Mn{sup 2+}, and satellites due to hyperfine interaction, superimposed on the signal of Fe{sup 3+} around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe{sup 3+} hides all Mn{sup 2+} lines. The strong growth of this signal indicates that the transitions are due to Fe{sup 3+} dipole–dipole interactions.

  15. Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tahara, Masaki [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Kim, Hee Young, E-mail: heeykim@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Hosoda, Hideki [Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Nam, Tae-hyun [School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Miyazaki, Shuichi, E-mail: miyazaki@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

    2010-10-15

    Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of {alpha} phase increases M{sub s} and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M{sub s} and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of {alpha} phase can be attributed to the fact that N is absorbed in {alpha} phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M{sub s} of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of {alpha} phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

  16. Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

    International Nuclear Information System (INIS)

    Tahara, Masaki; Kim, Hee Young; Hosoda, Hideki; Nam, Tae-hyun; Miyazaki, Shuichi

    2010-01-01

    Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of α phase increases M s and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M s and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of α phase can be attributed to the fact that N is absorbed in α phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M s of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of α phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

  17. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  18. Influence of annealing temperature on the structural, mechanical and wetting property of TiO2 films deposited by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Pradhan, Swati S.; Sahoo, Sambita; Pradhan, S.K.

    2010-01-01

    TiO 2 films have been deposited on silicon substrates by radio frequency magnetron sputtering of a pure Ti target in Ar/O 2 plasma. The TiO 2 films deposited at room temperature were annealed for 1 h at different temperatures ranging from 400 o C to 800 o C. The structural, morphological, mechanical properties and the wetting behavior of the as deposited and annealed films were obtained using Raman spectroscopy, atomic force microscopy, transmission electron microscopy, nanoindentation and water contact angle (CA) measurements. The as deposited films were amorphous, and the Raman results showed that anatase phase crystallization was initiated at annealing temperature close to 400 o C. The film annealed at 400 o C showed higher hardness than the film annealed at 600 o C. In addition, the wettability of film surface was enhanced with an increase in annealing temperature from 400 o C to 800 o C, as revealed by a decrease in water CA from 87 o to 50 o . Moreover, the water CA of the films obtained before and after UV light irradiation revealed that the annealed films remained more hydrophilic than the as deposited film after irradiation.

  19. Effect of annealing temperature on the structure and coke-resistance of nickel–iron bimetallic catalytic layer for in situ methane steam reforming in SOFC operation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xuehua; Zhang, Hanqing; Zhao, DanDan; Tang, Dian; Zhang, Teng, E-mail: teng_zhang@fzu.edu.cn

    2014-11-15

    Highlights: • An intermediate FeNi{sub 3} phase forms in all N{sub i0.75}Fe{sub 0.25} catalysts in present work. • The catalyst annealed at 705 °C has smallest calculated surface energy. • The catalyst annealed at 705 °C also exhibits the best coke resistance in methane. • The cell with catalyst layer annealed at 705 °C has the best stability in methane. - Abstract: In this paper, the effect on coke formation of adding a Ni{sub 0.75}Fe{sub 0.25} catalyst layer to the anode side of a fuel cell running on methane is investigated. The formation of an intermediate FeNi{sub 3} phase can be observed in catalysts annealed at different temperatures. The catalyst annealed at 705 °C has the smallest calculated surface energy and grain size among all catalysts annealed at different temperatures. In addition, the O{sub 2}-TPO profiles and Raman spectra of spent anode material reveal that the catalyst annealed at 705 °C has the best coke resistance among all catalysts. Moreover, the cell with catalyst layer annealed at 705 °C, under a current density of 600 mA cm{sup −2} at 650 °C, experiences a decrease of 10% after operating in methane for 260 min, which is much more stable than that without catalyst layer (a decrease of 50%)

  20. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  1. Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

    Science.gov (United States)

    Yu, Haijiang

    This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

  2. Elevated exhaust temperature, zoned, electrically-heated particulate matter filter

    Science.gov (United States)

    Gonze, Eugene V [Pinckney, MI; Bhatia, Garima [Bangalore, IN

    2012-04-17

    A system includes an electrical heater and a particulate matter (PM) filter that is arranged one of adjacent to and in contact with the electrical heater. A control module selectively increases an exhaust gas temperature of an engine to a first temperature and that initiates regeneration of the PM filter using the electrical heater while the exhaust gas temperature is above the first temperature. The first temperature is greater than a maximum exhaust gas temperature at the PM filter during non-regeneration operation and is less than an oxidation temperature of the PM.

  3. Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films

    International Nuclear Information System (INIS)

    Bai, W.; Zhu, J.Y.; Wang, J.L.; Lin, T.; Yang, J.; Meng, X.J.; Tang, X.D.; Zhu, Z.Q.; Chu, J.H

    2012-01-01

    The effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius layer-structured Bi 5 Ti 3 FeO 15 (BTF) films were investigated. It was found that an annealing temperature above 625 °C can lead to the appearance of Bi 4 Ti 3 O 12 (BiT) secondary phase on Pt substrates. The reduction of the grain sizes was simultaneously confirmed by X-ray diffraction and atomic force microscopy with the introduction of the BiT phase. Moreover, the remanent polarization and coercive field of the BTF films were dramatically enhanced with the introduction of the BiT phase. Improved ferromagnetism for the BTF films was demonstrated upon increasing annealing temperature. Our data indicated that the ferroelectricity strongly correlated with the growth orientation of the BTF films. Finally, the possible factors for the obvious increase of the remanent polarization and coercive field, and the possible reasons for the enhanced ferromagnetic properties were discussed with increasing annealing temperature. - Highlights: ► Effects of annealing temperature on physical properties of BTF films were studied. ► Improved multiferroic properties were shown with annealing temperature. ► Ferroelectricity strongly depended on the growth orientation of the BTF films. ► Possible factors were proposed to explain the improved multiferroic properties.

  4. Enhanced luminescence from silver nanoparticles integrated Er{sup 3+}-doped boro-tellurite glasses: Impact of annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.

    2015-11-15

    Considerable enhancement of rare earth ions luminescence intensity stimulated via metal nanoparticles (NPs) inclusion inside inorganic glass matrix opened a new avenue to achieving efficient lasing glass media. Tuning the localised surface plasmon resonance (LSPR) band of noble metal NPs through their precise size manipulation is demonstrated to be the key for such accomplishment. We report the influences of annealing (heat treatment) temperature (AT) on the down-conversion luminescence features of erbium (Er{sup 3+}) doped zinc-boro-tellurite (ZBT) glasses containing silver NPs. The AT dependent (between 390 and 450 °C) variations in refractive index and density are ascribed to the generation of non-bridging oxygen (NBO) ions. X-ray diffraction pattern confirmed the amorphous nature of the melt-quenched synthesized glass samples. TEM micrograph revealed the nucleation of Ag NPs inside the glass matrix having average diameter between 8.4 (un-annealed sample) to 11.8 nm (annealed). The UV–Vis spectra exhibited seven absorption bands corresponding to {sup 4}f–{sup 4}f transitions of Er{sup 3+} ions. Annealed samples displayed a red shift of SPR bands positioned at 550 and 580 nm. Judd–Ofelt theory is used to evaluate the intensity parameters for radiative transitions within 4f{sup n} configuration of Er{sup 3+} ion. Annealing up to 410 °C is found to stimulate the plasmonic effect through the enlargement of NPs. Consequently, the PL intensity is enhanced by a factor of 3.23 ({sup 2}H{sub 11/2} → {sup 4}I{sub 15/2}), 4.10 ({sup 4}S{sub 3/2} → {sup 4}I{sub 15/2}), and 3.79 ({sup 4}F{sub 9/2} → {sup 4}I{sub 15/2}). This achieved excellent down-conversion luminescence efficiency of proposed glasses shows their potential implementation in photonic devices and solid state lasers. - Highlights: • The changes in the physical properties are ascribed to the generation of NBO. • TEM images confirmed the presence of Ag NPs in the glass matrix. • The achieved

  5. Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun-Woo; Choi, Min-Jun; Jo, Yongcheol; Chung, Kwun-Bum, E-mail: kbchung@dongguk.edu

    2014-12-01

    Highlights: • We studied the low temperature process of InGaZnO oxide thin film transistor. • Hydorgen irradiation was used for low temperature process below 150 °C. • Using hydrogen irradiation, field effect mobility of IGZO TFT was enhanced to ∼5 cm{sup 2} /Vs. • We examined the origin of improvement of device performance via electronic structure. - Abstract: Device performance of radio frequency (RF) sputtered InGaZnO (IGZO) thin film transistors (TFTs) were improved using combination post-treatment with hydrogen irradiation and low temperature annealing at 150 °C. Under the combination treatment, IGZO TFTs were significantly enhanced without changing physical structure and chemical composition. On the other hand, the electronic structure represents a dramatically modification of the chemical bonding states, band edge states below the conduction band, and band alignment. Compared to the hydrogen irradiation or low temperature annealing, the combination treatment induces the increase of oxygen deficient chemical bonding states, the shallow band edge state below the conduction band, and the smaller energy difference of conduction band offset, which can generate the increase in charge carrier and enhance the device performance.

  6. Grasslands feeling the heat: The effects of elevated temperatures on a subtropical grassland

    Directory of Open Access Journals (Sweden)

    Rowan D. Buhrmann

    2016-12-01

    Conclusions: OTCs can simulate realistic increases of air temperature in subtropical grasslands. Graminoids and shrubs appear to benefit from elevated temperatures whilst forbs decrease in abundance, possibly through competition and/or direct physiological effects.

  7. Exchange bias behavior in Ni{sub 50.0}Mn{sub 35.5} In{sub 14.5} ribbons annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, T. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Sato Turtelli, R.; Groessinger, R. [Institut fur Festkoerperphysik, Technische Universitaet Wien, Wiedner Hauptstr. 8-10, 1040 Vienna (Austria); Sanchez, M.L.; Santos, J.D.; Rosa, W.O.; Prida, V.M. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Escoda, Ll.; Sunol, J.J. [Campus de Montilivi, Universidad de Girona, edifici PII, Lluis Santalo s/n. 17003 Girona (Spain); Koledov, V. [Kotelnikov Institute of Radio Engineering and Electronics, RAS, Moscow 125009 (Russian Federation); Hernando, B., E-mail: grande@uniovi.es [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

    2012-10-15

    Heusler alloy Ni{sub 50.0}Mn{sub 35.5}In{sub 14.5} ribbons were prepared by melt-spinning technique. Several short time annealings were carried out in order to enhance the exchange bias effect in this alloy ribbon. The magnetic transition temperature increases with the annealing, compared to the as-spun sample, however no significant differences in respective Curie temperatures were observed for austenite and martensite phases in such annealed samples. Exchange bias effect is observed at low temperatures for all samples and practically vanishes at 60 K for the as-spun sample, whereas for the annealed ribbons it vanishes at 100 K.

  8. Semiclassical approach to finite-temperature quantum annealing with trapped ions

    Science.gov (United States)

    Raventós, David; Graß, Tobias; Juliá-Díaz, Bruno; Lewenstein, Maciej

    2018-05-01

    Recently it has been demonstrated that an ensemble of trapped ions may serve as a quantum annealer for the number-partitioning problem [Nat. Commun. 7, 11524 (2016), 10.1038/ncomms11524]. This hard computational problem may be addressed by employing a tunable spin-glass architecture. Following the proposal of the trapped-ion annealer, we study here its robustness against thermal effects; that is, we investigate the role played by thermal phonons. For the efficient description of the system, we use a semiclassical approach, and benchmark it against the exact quantum evolution. The aim is to understand better and characterize how the quantum device approaches a solution of an otherwise difficult to solve NP-hard problem.

  9. Effect of high temperature annealing on the microstructure of SCS-6 SiC fibers

    Science.gov (United States)

    Ning, X. J.; Pirouz, P.; Bhatt, R. T.

    1992-01-01

    The effect of annealing the SCS-6 SiC fiber for one hour at 2000 C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

  10. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Liu, R. [SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)

    2016-06-14

    Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

  11. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    Science.gov (United States)

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  12. Optimization Study of PEMFC stack at elevated temperature

    African Journals Online (AJOL)

    UPUser

    structures improves the PEM fuel cell system performance at higher temperature of operation and optimal aspect ... theoretical voltage at which a fuel cell can operate [4]. ... distribution. ... water loss in the cell until a critical temperature is.

  13. Thermal diffusivity of felsic to mafic granulites at elevated temperatures

    Science.gov (United States)

    Ray, Labani; Förster, H.-J.; Schilling, F. R.; Förster, A.

    2006-11-01

    The thermal diffusivity of felsic and intermediate granulites (charnockites, enderbites), mafic granulites, and amphibolite-facies gneisses has been measured up to temperatures of 550 °C using a transient technique. The rock samples are from the Archean and Pan-African terranes of the Southern Indian Granulite Province. Thermal diffusivity at room temperature ( DRT) for different rock types ranges between 1.2 and 2.2 mm 2 s - 1 . For most of the rocks, the effect of radiative heat transfer is observed at temperatures above 450 °C. However, for few enderbites and mafic granulites, radiative heat transfer is negligible up to 550 °C. In the temperature range of conductive heat transfer, i.e., between 20 ° and 450 °C, thermal diffusivity decreases between 35% and 45% with increasing temperature. The temperature dependence of the thermal diffusivity is directly correlated with the thermal diffusivity at room temperature, i.e., the higher the thermal diffusivity at room temperature, DRT, the greater is its temperature dependence. In this temperature range i.e., between 20 and 450 °C, thermal diffusivity can be expressed as D = 0.7 mm 2 s -1 + 144 K ( DRT - 0.7 mm 2 s -1 ) / ( T - 150 K), where T is the absolute temperature in Kelvin. At higher temperatures, an additional radiative contribution is observed according to CT3, where C varies from 10 - 9 to 10 - 10 depending on intrinsic rock properties (opacity, absorption behavior, grain size, grain boundary, etc). An equation is presented that describes the temperature and pressure dependence thermal diffusivity of rocks based only on the room-temperature thermal diffusivity. Room-temperature thermal diffusivity and its temperature dependence are mainly dependent on the major mineralogy of the rock. Because granulites are important components of the middle and lower continental crust, the results of this study provide important constraints in quantifying more accurately the thermal state of the deeper continental

  14. The effects of prolonged exposure to elevated temperatures and elevated CO2 levels on the growth, yield and dry matter partitioning of field-sown meadow fescue

    Directory of Open Access Journals (Sweden)

    Kaija Hakala

    1996-05-01

    Full Text Available Field-sown meadow fescue (Festuca pratensis, cv. Kalevi stands were exposed to elevated temperatures (+3°C and elevated CO2, (700 ppm levels in two experiments conducted in 1992-1993 (experiment 1 and in 1994-1995 (experiment 2. Total aboveground yield was, on average, 38% higher at elevated than at ambient temperatures. At ambient temperatures elevated CO2 increased the number of tillers by 63% in 1992, 24% in 1993, 90% in 1994 and 14% in 1995. At elevated temperatures, the increase in tiller number in elevated CO2 was seen only in the first growing seasons after sowing. The total yield in a growing season was about 10% higher in elevated CO2 in experiment 1. In experiment 2 the yield was more than 20% higher in elevated CO2 at elevated temperatures, whereas at ambient temperatures the rise in CO2 level had no effect on the yield; the root biomass, however, increased by more than 30%. In elevated CO2 at ambient temperatures the root biomass also increased in experiment I, but at elevated temperatures there was no consistent change. The soluble carbohydrate content of above-ground biomass was 5-48% higher in elevated CO2 at most of the measuring times during the growing season, but the nitrogen content did not show a clear decrease. The reasons for the lack of a marked increase in biomass in elevated CO2 despite a 40-60% increase in photosynthesis are discussed.

  15. MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  16. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    Science.gov (United States)

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  17. Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature.

    Science.gov (United States)

    Velasco, J Marquez; Giamini, S A; Kelaidis, N; Tsipas, P; Tsoutsou, D; Kordas, G; Raptis, Y S; Boukos, N; Dimoulas, A

    2015-10-09

    Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

  18. Effect of Annealing Temperature on Microstructure and Mechanical Properties of Hot-Dip Galvanizing DP600 Steel

    Science.gov (United States)

    Hai-yan, Sun; Zhi-li, Liu; Yang, Xu; Jian-qiang, Shi; Lian-xuan, Wang

    Hot-dip galvanizing dual phase steel DP600 steel grade with low Si was produced by steel plant and experiments by simulating galvanizing thermal history. The microstructure was observed and analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effect of different annealing temperatures on the microstructure and mechanical properties of dual-phase steel was also discussed. The experimental results show that the dual-phase steel possesses excellent strength and elongation that match EN10346 600MPa standards. The microstructure is ferrite and martensite. TEM micrograph shows that white ferrite with black martensite islands inlay with a diameter of around 1um and the content of 14 18%. The volume will expand and phase changing take the form of shear transformation when ferrite converted to martensite. So there are high density dislocations in ferrite crystalline grain near martensite. The martensite content growing will be obvious along with annealing temperature going up. But the tendency will be weak when temperature high.

  19. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  20. Low cycle fatigue strength of some austenitic stainless steels at room temperature and elevated temperatures

    International Nuclear Information System (INIS)

    Type 304, 316, and 316L stainless steels were tested from room temperature to 650 0 C using two kinds of bending test specimens. Particularly, Type 304 was tested at several cyclic rates and 550 0 and 650 0 C, and the effect of cyclic rate on its fatigue strength was investigated. Test results are summarized as follows: (1) The bending fatigue strength at room temperature test shows good agreement with the axial fatigue one, (2) Manson--Coffin's fatigue equation can be applied to the results, (3) the ratio of crack initiation to failure life becomes larger at higher stress level, and (4) the relation between crack propagation life and total strain range or elastic strain range are linear in log-log scale. This relation also agrees with the equations which were derived from some crack propagation laws. It was also observed at the elevated temperature test: (1) The reduction of fatigue strength is not noticeable below 500 0 C, but it is noted at higher temperature. (2) The cycle rate does not affect on fatigue strength in faster cyclic rate than 20 cpm and below 100,000 cycles life range. (3) Type 316 stainless steel shows better fatigue property than type 304 and 316L stainless steels. 30 figures

  1. Influence of high temperature annealing on the structure, hardness and tribological properties of diamond-like carbon and TiAlSiCN nanocomposite coatings

    International Nuclear Information System (INIS)

    Xie, Z.W.; Wang, L.P.; Wang, X.F.; Huang, L.; Lu, Y.; Yan, J.C.

    2011-01-01

    Diamond-like carbon (DLC) and TiAlSiCN nanocomposite coatings were synthesized and annealed at different temperatures in a vacuum environment. The microstructure, hardness and tribological properties of as-deposited and annealed DLC-TiAlSiCN nanocomposite coatings were characterized by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Raman spectroscopy, nano-indentation and friction tests. The TEM results reveal that the as-deposited DLC-TiAlSiCN coating has a unique nanocomposite structure consisting of TiCN nanocrystals embedded in an amorphous matrix consisting of a-Si 3 N 4 , a-SiC, a-CN and DLC, and the structure changed little after annealing at 800 °C. However, XPS and Raman results show that an obvious graphitization of the DLC phase occurred during the annealing process and it worsened with annealing temperature. Because of the graphitization, the hardness of the DLC-TiAlSiCN coating after annealing at 800 °C decreased from 45 to 36 GPa. In addition, the DLC-TiAlSiCN coating after annealing at 800 °C has a similar friction coefficient to the as-deposited coating.

  2. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    Science.gov (United States)

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  3. Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

    Science.gov (United States)

    Nag, Jadupati; Ray, Nirat

    2018-05-01

    Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

  4. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    Science.gov (United States)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  5. Radionuclide solubilities at elevated temperatures. A literature study

    International Nuclear Information System (INIS)

    Carlsson, T.; Vuorinen, U.

    1997-07-01

    This literature study contains experimental data and modelling data collected in order to illustrate how temperature affects radionuclide solubilities under conditions similar to those expected in the vicinity of a planned repository for spent nuclear fuel. The elements considered were Ni, Se, Zr, Tc, Pd, Sn, Ra, Th, Pa, U, Np, Pu and Am. The temperatures of main interest are restricted to the interval between room temperature and 100 deg C. The study showed that the literature on radionuclide solubility at temperatures above room temperature is scarce. Therefore, also work that refers to conditions slightly varying from the expected repository conditions has been considered. A minor modelling exercise was done in this study in order to show the effect of temperature on the solubilities of Ni, Np and U under various conditions. The results from the literature survey and our modelling demonstrate the complexity of groundwater systems and the difficulty in finding simple and general relationships between temperature and radionuclide solubilities. Often an increase in temperature (below 100 deg C) leads to a reduction of the radionuclide solubility or leaves it roughly unchanged. However, examples are also found where the rise in temperature increases the radionuclide solubility by several orders of magnitude. (orig.)

  6. Radionuclide solubilities at elevated temperatures. A literature study

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, T.; Vuorinen, U. [Technical Research Centre of Finland, Espoo (Finland)

    1997-07-01

    This literature study contains experimental data and modelling data collected in order to illustrate how temperature affects radionuclide solubilities under conditions similar to those expected in the vicinity of a planned repository for spent nuclear fuel. The elements considered were Ni, Se, Zr, Tc, Pd, Sn, Ra, Th, Pa, U, Np, Pu and Am. The temperatures of main interest are restricted to the interval between room temperature and 100 deg C. The study showed that the literature on radionuclide solubility at temperatures above room temperature is scarce. Therefore, also work that refers to conditions slightly varying from the expected repository conditions has been considered. A minor modelling exercise was done in this study in order to show the effect of temperature on the solubilities of Ni, Np and U under various conditions. The results from the literature survey and our modelling demonstrate the complexity of groundwater systems and the difficulty in finding simple and general relationships between temperature and radionuclide solubilities. Often an increase in temperature (below 100 deg C) leads to a reduction of the radionuclide solubility or leaves it roughly unchanged. However, examples are also found where the rise in temperature increases the radionuclide solubility by several orders of magnitude. (orig.). 54 refs.

  7. Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

    Science.gov (United States)

    Draper, Susan L.

    1987-01-01

    Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

  8. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  9. Effect of Annealing Temperature on the Corrosion Protection of Hot Swaged Ti-54M Alloy in 2 M HCl Pickling Solutions

    Directory of Open Access Journals (Sweden)

    El-Sayed M. Sherif

    2017-01-01

    Full Text Available The corrosion of Ti-54M titanium alloy processed by hot rotary swaging and post-annealed to yield different grain sizes, in 2 M HCl solutions is reported. Two annealing temperatures of 800 °C and 940 °C, followed by air cooling and furnace cooling were used to give homogeneous grain structures of 1.5 and 5 μm, respectively. It has been found that annealing the alloy at 800 °C decreased the corrosion of the alloy, with respect to the hot swaged condition, through increasing its corrosion resistance and decreasing the corrosion current and corrosion rate. Increasing the annealing temperature to 940 °C further decreased the corrosion of the alloy.

  10. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    International Nuclear Information System (INIS)

    Belmeguenai, M.; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

    2014-01-01

    10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T a ), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T a , while the uniaxial anisotropy field is nearly unaffected by T a within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T a . Finally, the FMR linewidth decreases when increasing T a , due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10 −3 and 1.3×10 −3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  11. Effects of Elevated Ambient Temperature on Reproductive Outcomes and Offspring Growth Depend on Exposure Time

    Directory of Open Access Journals (Sweden)

    Huda Yahia Hamid

    2012-01-01

    Full Text Available Reproductive performance has been shown to be greatly affected by changes in environmental factors, such as temperature. However, it is also crucial to identify the particular stage of pregnancy that is most adversely affected by elevated ambient temperature. The aims of this study were to determine the effect on reproductive outcomes of exposure to elevated ambient temperature during different stages of pregnancy and to determine the effect of prenatal heat stress on offspring growth. Sixty pregnant rats were used in this study. The rats were divided equally into four groups as group 1 (control, group 2 (exposed to elevated temperature following implantation, group 3 (exposed to elevated temperature during pre- and periimplantation, and group 4 (exposed to elevated temperature during pre- and periimplantation and following implantation. Groups 3 and 4 had prolonged gestation periods, reduced litter sizes, and male-biased sex ratios. Moreover, the growth patterns of group 3 and 4 pups were adversely affected by prenatal exposure to elevated temperature. The differences between group 1 and group 3 and between group 1 and group 4 were highly significant. However, no significant differences were observed between groups 1 and 2 in the gestation length, sex ratios, and growth patterns. Thus, it can be concluded that exposure to elevated ambient temperature during pre- and periimplantation has stronger adverse effects on reproductive outcomes and offspring growth than postimplantation exposure.

  12. Mechanical and Microstructural Evaluations of Lightweight Aggregate Geopolymer Concrete before and after Exposed to Elevated Temperatures.

    Science.gov (United States)

    Abdulkareem, Omar A; Abdullah, Mohd Mustafa Al Bakri; Hussin, Kamarudin; Ismail, Khairul Nizar; Binhussain, Mohammed

    2013-10-09

    This paper presents the mechanical and microstructural characteristics of a lightweight aggregate geopolymer concrete (LWAGC) synthesized by the alkali-activation of a fly ash source (FA) before and after being exposed to elevated temperatures, ranging from 100 to 800 °C. The results show that the LWAGC unexposed to the elevated temperatures possesses a good strength-to-weight ratio compared with other LWAGCs available in the published literature. The unexposed LWAGC also shows an excellent strength development versus aging times, up to 365 days. For the exposed LWAGC to the elevated temperatures of 100 to 800 °C, the results illustrate that the concretes gain compressive strength after being exposed to elevated temperatures of 100, 200 and 300 °C. Afterward, the strength of the LWAGC started to deteriorate and decrease after being exposed to elevated temperatures of 400 °C, and up to 800 °C. Based on the mechanical strength results of the exposed LWAGCs to elevated temperatures of 100 °C to 800 °C, the relationship between the exposure temperature and the obtained residual compressive strength is statistically analyzed and achieved. In addition, the microstructure investigation of the unexposed LWAGC shows a good bonding between aggregate and mortar at the interface transition zone (ITZ). However, this bonding is subjected to deterioration as the LWAGC is exposed to elevated temperatures of 400, 600 and 800 °C by increasing the microcrack content and swelling of the unreacted silicates.

  13. Inference of domain structure at elevated temperature in fine ...

    African Journals Online (AJOL)

    The thermal variation of the number of domains (nd) for Fe7S8 particles (within the size range 1-30 mm and between 20 and 300°C), has been inferred from the room temperature analytic expression between nd and particle size (L), the temperature dependences of the anisotropy energy constant (K) and the spontaneous ...

  14. Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

    International Nuclear Information System (INIS)

    Rooyen, I.J. van; Neethling, J.H.; Henry, A.; Janzén, E.; Mokoduwe, S.M.; Janse van Vuuren, A.; Olivier, E.

    2012-01-01

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. 30 Si transmutes to phosphorous ( 31 P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1 × 10 15 to 1.2 × 10 19 atom/cm 3 and are therefore relevant to the PBMR operating conditions. Annealing from 1000 °C to 2100 °C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which 110m Ag, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 °C to 2100 °C. The HRTEM micrograph of the decomposition of SiC at 2100 °C are shown and discussed. Nanotubes were not identified during the TEM and HRTEM analysis

  15. Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Rooyen, I.J. van, E-mail: Isabella.vanrooyen@inl.gov [CSIR, National Laser Centre, PO Box 395, Pretoria 0001 (South Africa); Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Fuel Design, PBMR, 1279 Mike Crawford Avenue, Centurion 0046 (South Africa); Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Henry, A.; Janzen, E. [Department of Physics, Chemistry and Biology, Semiconductor Materials, Linkoeping University, Linkoeping 58183 (Sweden); Mokoduwe, S.M. [Fuel Design, PBMR, 1279 Mike Crawford Avenue, Centurion 0046 (South Africa); Janse van Vuuren, A.; Olivier, E. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-10-15

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. {sup 30}Si transmutes to phosphorous ({sup 31}P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1 Multiplication-Sign 10{sup 15} to 1.2 Multiplication-Sign 10{sup 19} atom/cm{sup 3} and are therefore relevant to the PBMR operating conditions. Annealing from 1000 Degree-Sign C to 2100 Degree-Sign C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which {sup 110m}Ag, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 Degree-Sign C to 2100 Degree-Sign C. The HRTEM micrograph of the decomposition of Si

  16. EFFECT OF ELEVATED TEMPERATURE ON COMPRESSIVE STRENGTH OF FIBER REINFORCED CONCRETE

    OpenAIRE

    Prashant shinkar*, Prof. Deepak kakade, Dr.A.P.Wadekar

    2017-01-01

    This paper deals with the mechanical properties of concrete with steel fibers subjected to temperatures up to 500°C. Now a day concrete are being used extensively in the construction that might be subjected to elevated temperatures. The behavior of concrete structures at elevated temperatures is of significant importance in predicting the safety of structures in response to certain accidents or particular service conditions. Concrete mixes of M 50 have been designed along with steel fibers fr...

  17. Elevated Temperature and CO2 Stimulate Late-Season Photosynthesis But Impair Cold Hardening in Pine.

    Science.gov (United States)

    Chang, Christine Y; Fréchette, Emmanuelle; Unda, Faride; Mansfield, Shawn D; Ensminger, Ingo

    2016-10-01

    Rising global temperature and CO 2 levels may sustain late-season net photosynthesis of evergreen conifers but could also impair the development of cold hardiness. Our study investigated how elevated temperature, and the combination of elevated temperature with elevated CO 2 , affected photosynthetic rates, leaf carbohydrates, freezing tolerance, and proteins involved in photosynthesis and cold hardening in Eastern white pine (Pinus strobus). We designed an experiment where control seedlings were acclimated to long photoperiod (day/night 14/10 h), warm temperature (22°C/15°C), and either ambient (400 μL L -1 ) or elevated (800 μmol mol -1 ) CO 2 , and then shifted seedlings to growth conditions with short photoperiod (8/16 h) and low temperature/ambient CO 2 (LTAC), elevated temperature/ambient CO 2 (ETAC), or elevated temperature/elevated CO 2 (ETEC). Exposure to LTAC induced down-regulation of photosynthesis, development of sustained nonphotochemical quenching, accumulation of soluble carbohydrates, expression of a 16-kD dehydrin absent under long photoperiod, and increased freezing tolerance. In ETAC seedlings, photosynthesis was not down-regulated, while accumulation of soluble carbohydrates, dehydrin expression, and freezing tolerance were impaired. ETEC seedlings revealed increased photosynthesis and improved water use efficiency but impaired dehydrin expression and freezing tolerance similar to ETAC seedlings. Sixteen-kilodalton dehydrin expression strongly correlated with increases in freezing tolerance, suggesting its involvement in the development of cold hardiness in P. strobus Our findings suggest that exposure to elevated temperature and CO 2 during autumn can delay down-regulation of photosynthesis and stimulate late-season net photosynthesis in P. strobus seedlings. However, this comes at the cost of impaired freezing tolerance. Elevated temperature and CO 2 also impaired freezing tolerance. However, unless the frequency and timing of extreme low-temperature

  18. Interactive effect of elevated CO2 and temperature on coral physiology

    Science.gov (United States)

    Grottoli, A. G.; Cai, W.; Warner, M.; Melman, T.; Schoepf, V.; Baumann, J.; Matsui, Y.; Pettay, D. T.; Hoadley, K.; Xu, H.; Wang, Y.; Li, Q.; Hu, X.

    2011-12-01

    Increases in ocean acidification and temperature threaten coral reefs globally. However, the interactive effect of both lower pH and higher temperature on coral physiology and growth are poorly understood. Here, we present preliminary findings from a replicated controlled experiment where four species of corals (Acorpora millepora, Pocillopora damicornis, Montipora monasteriata, Turbinaria reniformis) were reared under the following six treatments for three weeks: 1) 400ppm CO2 and ambient temperature, 2) 400ppm CO2 and elevated temperature, 3) 650ppm CO2 and ambient temperature, 4) 650ppm CO2 and elevated temperature, 5) 800ppm CO2 and ambient temperature, 6) 800ppm CO2 and elevated temperature. Initial findings of photophysiological health (Fv/Fm), calcification rates (as measured by both buoyant weight and the total alkalinity methods), and energy reserves will be presented.

  19. A self-propagation high-temperature synthesis and annealing route to synthesis of wave-like boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jilin; Zhang, Laiping [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Gu, Yunle, E-mail: ncm@mail.wit.edu.cn [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Pan, Xinye; Zhao, Guowei; Zhang, Zhanhui [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China)

    2013-03-15

    Highlights: ► Large quantities of wave-like BN nanotubes were synthesized by SHS-annealing method. ► The catalytic boron-containing porous precursor was produced by self-propagation high-temperature synthesis method. ► Three growth models were proposed to explain the growth mechanism of the wave-like BN nanotubes. - Abstract: Large quantities of boron nitride (BN) nanotubes were synthesized by annealing a catalytic boron-containing porous precursor in flowing NH{sub 3} gas at 1180 °C. The porous precursor was prepared by self-propagation high-temperature synthesis (SHS) method at 800 °C using Mg, B{sub 2}O{sub 3} and amorphous boron powder (α-B) as the starting materials. The porous precursor played an important role in large quantities synthesis of BN nanotubes. The as-synthesized product was characterized by X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), Raman, Scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), Transmission electron microscopy (TEM) and High-resolution transmission electron microscopy (HRTEM). Characterization results indicated that the BN nanotubes displayed wave-like inner structures with diameters in the range of 50–300 nm and average lengths of more than 10 μm. The possible growth mechanism of the BN nanotubes was also discussed.

  20. High-Temperature-Short-Time Annealing Process for High-Performance Large-Area Perovskite Solar Cells.

    Science.gov (United States)

    Kim, Minjin; Kim, Gi-Hwan; Oh, Kyoung Suk; Jo, Yimhyun; Yoon, Hyun; Kim, Ka-Hyun; Lee, Heon; Kim, Jin Young; Kim, Dong Suk

    2017-06-27

    Organic-inorganic hybrid metal halide perovskite solar cells (PSCs) are attracting tremendous research interest due to their high solar-to-electric power conversion efficiency with a high possibility of cost-effective fabrication and certified power conversion efficiency now exceeding 22%. Although many effective methods for their application have been developed over the past decade, their practical transition to large-size devices has been restricted by difficulties in achieving high performance. Here we report on the development of a simple and cost-effective production method with high-temperature and short-time annealing processing to obtain uniform, smooth, and large-size grain domains of perovskite films over large areas. With high-temperature short-time annealing at 400 °C for 4 s, the perovskite film with an average domain size of 1 μm was obtained, which resulted in fast solvent evaporation. Solar cells fabricated using this processing technique had a maximum power conversion efficiency exceeding 20% over a 0.1 cm 2 active area and 18% over a 1 cm 2 active area. We believe our approach will enable the realization of highly efficient large-area PCSs for practical development with a very simple and short-time procedure. This simple method should lead the field toward the fabrication of uniform large-scale perovskite films, which are necessary for the production of high-efficiency solar cells that may also be applicable to several other material systems for more widespread practical deployment.

  1. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  2. Crystallization and segregation in vitreous rutile films annealed at high temperature

    International Nuclear Information System (INIS)

    Omari, M.A.; Sorbello, R.S.; Aita, C.R.

    2005-01-01

    Vitreous titania films with rutile short-range order were sputter deposited on unheated fused silica substrates, sequentially annealed at 973 and 1273 K, and examined by Raman microscopy, scanning electron microscopy, and x-ray diffraction. A segregated microstructure developed after the 1273 K anneal. This microstructure consists of supermicron-size craters dispersed in a matrix of submicron rutile crystals. Ti-O short-range order in the craters is characteristic of a mixture of two high pressure phases, m-TiO 2 (monoclinic P2 1 /c space group) and α-TiO 2 (tetragonal Pbcn space group). We calculated that a high average compressive stress parallel to the substrate must be accommodated in the films at 1273 K, caused by the difference in the thermal expansion coefficients of titania and fused silica. The formation of the segregated microstructure is modeled by considering two processes at work at 1273 K to lower a film's internal energy: crystallization and nonuniform stress relief. The Gibbs-Thomson relation shows that small m-TiO 2 crystallites are able to form directly from vitreous TiO 2 at 1273 K. However, the preferred mechanism for forming α-TiO 2 is likely to be by epitaxial growth at crystalline rutile twin boundaries (secondary crystallization). Both phases are denser than crystalline rutile and reduce the average thermal stress in the films

  3. Brassinosteroid signaling-dependent root responses to prolonged elevated ambient temperature.

    Science.gov (United States)

    Martins, Sara; Montiel-Jorda, Alvaro; Cayrel, Anne; Huguet, Stéphanie; Roux, Christine Paysant-Le; Ljung, Karin; Vert, Grégory

    2017-08-21

    Due to their sessile nature, plants have to cope with and adjust to their fluctuating environment. Temperature elevation stimulates the growth of Arabidopsis aerial parts. This process is mediated by increased biosynthesis of the growth-promoting hormone auxin. How plant roots respond to elevated ambient temperature is however still elusive. Here we present strong evidence that temperature elevation impinges on brassinosteroid hormone signaling to alter root growth. We show that elevated temperature leads to increased root elongation, independently of auxin or factors known to drive temperature-mediated shoot growth. We further demonstrate that brassinosteroid signaling regulates root responses to elevated ambient temperature. Increased growth temperature specifically impacts on the level of the brassinosteroid receptor BRI1 to downregulate brassinosteroid signaling and mediate root elongation. Our results establish that BRI1 integrates temperature and brassinosteroid signaling to regulate root growth upon long-term changes in environmental conditions associated with global warming.Moderate heat stimulates the growth of Arabidopsis shoots in an auxin-dependent manner. Here, Martins et al. show that elevated ambient temperature modifies root growth by reducing the BRI1 brassinosteroid-receptor protein level and downregulating brassinosteroid signaling.

  4. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    International Nuclear Information System (INIS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-01-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

  5. Elevated temperature tensile properties of borated 304 stainless steel

    International Nuclear Information System (INIS)

    Stephens, J.J.; Sorenson, K.B.; McConnell, P.

    1993-01-01

    This paper presents a comparison of the tensile properties of Powder Metallurgy (PM) 'Grade A' material with that of the conventional IM 'Grade B' material for two selected Types (i.e., boron contents) as defined by the ASTM A887 specification: Types 304B5 and 304B7. Tensile properties have been generated for these materials at temperatures ranging from room temperature to 400degC (752degF). The data at higher temperatures are required for ASME Code Case purposes, since the use temperature of a basket under 'worst case' cask conditions may be as high as 343degC (650degF), due to self-heating by the activated fuel elements. We will also discuss the current status of efforts aimed at obtaining an ASME Boiler and Pressure Vessel Code Case for selected grades of borated stainless steel covered by the ASTM A887 specification. (J.P.N.)

  6. Effects of elevated ambient temperature on embryo implantation in rats

    African Journals Online (AJOL)

    Yomi

    2012-03-22

    Mar 22, 2012 ... ambient temperature leads to a delayed implantation and reduced number of implantation sites in. Sprague ... rates decrease after exposure to stress. One of the ..... implantation initiation time, support the previous findings.

  7. Behavior of HPC with Fly Ash after Elevated Temperature

    OpenAIRE

    Shang, Huai-Shuai; Yi, Ting-Hua

    2013-01-01

    For use in fire resistance calculations, the relevant thermal properties of high-performance concrete (HPC) with fly ash were determined through an experimental study. These properties included compressive strength, cubic compressive strength, cleavage strength, flexural strength, and the ultrasonic velocity at various temperatures (20, 100, 200, 300, 400 and 500∘C) for high-performance concrete. The effect of temperature on compressive strength, cubic compressive strength, cleavage strength,...

  8. Uranyl(VI) luminescence spectroscopy at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Steudtner, Robin; Franzen, Carola; Brendler, Vinzenz [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Div. Surface Processes; Haubitz, Toni [Brandenburg Univ. of Technology, Cottbus-Senftenberg (Germany)

    2016-07-01

    We studied the influence of temperature and ionic strength on the luminescence characteristics (band position, decay time and intensity) of the free uranyl ion (UO{sub 2}{sup 2+}) in acidic aqueous solution. Under the chosen conditions an increasing temperature reduced both intensity and luminescence decay time of the UO{sub 2}{sup 2+} luminescence, but the individual U(VI) emission bands did not change.

  9. The reaction of OH with H at elevated temperatures

    DEFF Research Database (Denmark)

    Lundström, T.; Christensen, H.; Sehested, K.

    2002-01-01

    The temperature dependence of the rate constant for the reaction between OH radicals and H atoms has been determined in Ar-saturated solutions at pH 2. The reaction was studied in the temperature range 5-233degreesC. The rate constants at 20degreesC and 200degreesC are 9.3 x 10(9) and 3.3 x 10...

  10. Surface alloying in Sn/Au(111) at elevated temperature

    Science.gov (United States)

    Sadhukhan, Pampa; Singh, Vipin Kumar; Rai, Abhishek; Bhattacharya, Kuntala; Barman, Sudipta Roy

    2018-04-01

    On the basis of x-ray photoelectron spectroscopy, we show that when Sn is deposited on Au(111) single crystal surface at a substrate temperature TS=373 K, surface alloying occurs with the formation of AuSn phase. The evolution of the surface structure and the surface morphology has been studied by low energy electron diffraction and scanning tunneling microscopy, respectively as a function of Sn coverage and substrate temperatures.

  11. Elevated body temperature in ischemic stroke associated with neurological improvement.

    Science.gov (United States)

    Khanevski, A N; Naess, H; Thomassen, L; Waje-Andreassen, U; Nacu, A; Kvistad, C E

    2017-11-01

    Some studies suggest that high body temperature within the first few hours of ischemic stroke onset is associated with improved outcome. We hypothesized an association between high body temperature on admission and detectable improvement within 6-9 hours of stroke onset. Consecutive ischemic stroke patients with NIHSS scores obtained within 3 hours and in the interval 6-9 hours after stroke onset were included. Body temperature was measured on admission. A total of 315 patients with ischemic stroke were included. Median NIHSS score on admission was 6. Linear regression showed that NIHSS score 6-9 hours after stroke onset was inversely associated with body temperature on admission after adjusting for confounders including NIHSS score body temperature and neurological improvement within few hours after admission. This finding may be limited to patients with documented proximal middle cerebral artery occlusion on admission and suggests a beneficial effect of higher body temperature on clot lysis within the first three hours. © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  12. The role of annealing temperature variation on ZnO nanorods array deposited on TiO2 seed layer

    Science.gov (United States)

    Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

    2018-05-01

    Seed layer of Titanium dioxide (TiO2) by sol-gel spin coating technique were coated on glass substrate to grow Zinc oxide nanorods (ZNR) by solution-immersion method. The fabricated ZNR were annealed at various temperatures ranged from 400 to 600° C. FESEM images revealed that smaller ZNR were densely grown at optimum temperature of 450 and 500°C. Meanwhile, for all samples a dominant (0 0 2) diffraction peak of ZNR recorded by XRD patterns was at 34.4° which corresponding to hexagonal ZNR with a wurtzite structure. UV-Vis absorbance spectra showed the maximum absorption properties at UV region were detected at 450 and 500°C. The samples also showed high absorbance values at visible region.

  13. Annealing temperature effects on the magnetic properties and induced defects in C/N/O implanted MgO

    Science.gov (United States)

    Li, Qiang; Ye, Bonian; Hao, Yingping; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

    2013-02-01

    Virgin MgO single crystals were implanted with 70 keV C/N/O ions at room temperature to a dose of 2 × 1017/cm2. After implantation the samples showed room temperature hysteresis in magnetization loops. The annealing effects on the magnetic properties and induced defects of these samples were determined by vibrating sample magnetometer and positron annihilation spectroscopy, respectively. The experimental results indicate that ferromagnetism can be introduced to MgO single crystals by doping with C, N or introduction of Mg related vacancy defects. However, the Mg vacancies coexistence with C or N ions in the C-/N-implanted samples may play a negative role in magnetic performance in these MgO samples. The rapid increase of magnetic moment in O-implanted sample is attributed to the formation of new type of vacancy defects.

  14. Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

    International Nuclear Information System (INIS)

    Hu, Y.M.; Lin, C.W.; Huang, J.C.A.

    2006-01-01

    High-quality (0001) oriented ZnO (300 A) film and [ZnO(100 A)/Al(t Al )] 3 (t Al = 0.6, 1.7, 2.8 A) multilayers have been established at room temperature on Al 2 O 3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 A thin is 1.7 A (about one Al atomic layer) and 400 deg. C, respectively, leading to the relatively lower resistivity (2.8 x 10 -3 Ω cm) and higher Hall mobility (10 cm 2 /V.s) without suppression of the visible transmittance (above 85%)

  15. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Joon-Ho [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Kyoung-Kook [Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi 429-793 (Korea, Republic of); Seong, Tae-Yeon, E-mail: tyseong@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2011-01-15

    Al-doped ZnO (AZO, ZnO:Al{sub 2}O{sub 3} = 98:2 wt%) films are deposited on different substrates by an RF magnetron sputtering and subsequently annealed at three different conditions to investigate the microstructural, electrical, and optical properties. X-ray diffraction and scanning electron microscope results show that all the samples are polycrystalline and the samples rapid-thermal-annealed at 900 deg. C in an N{sub 2} ambient contain larger grains compared to the furnace-annealed samples. It is shown that the sample deposited at room temperature on the sapphire gives a resistivity of 5.57 x 10{sup -4} {Omega} cm when furnace-annealed at 500 deg. C in a mixture of N{sub 2}:H{sub 2} (9:1). It is also shown that the Hall mobility vs. carrier concentration ({mu}-n) relation is divided into two groups, depending on the annealing conditions, namely, either rapid-thermal annealing or furnace annealing. The relations are described in terms of either grain boundary scattering or ionized impurity scattering mechanism. In addition, the samples produce fairly high transmittance of 91-96.99% across the wavelength region of 400-1100 nm. The optical bandgaps of the samples increase with increasing carrier concentration.

  16. Effect of annealing temperature on a single step processed Cu{sub 2}ZnSnS{sub 4} thin film via solution method

    Energy Technology Data Exchange (ETDEWEB)

    Prabeesh, P.; Selvam, I. Packia; Potty, S.N.

    2016-05-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising material for thin film solar cell applications because of its excellent photovoltaic properties, high abundance and non-toxicity. Thin films of CZTS are generally fabricated by vacuum based techniques or by using toxic solvents and these routes reduce its attention as a low cost and environmental friendly material. In this study, we have prepared CZTS through a solution based single step approach using non-toxic chemicals by spin coating and studied the effect of annealing temperature in the range 350–550 °C in nitrogen atmosphere on structural, optical and electrical properties. XRD results revealed the formation of kesterite phase at all annealing temperatures, while the Raman studies indicated Cu{sub 2}SnS{sub 2} impurity phase in the film annealed at 550 °C. Band gap of the films annealed in nitrogen varies from 1.46 eV to 1.56 eV, depending on the annealing temperature. Optimum properties, such as, good crystallinity, dense structure, ideal band gap (1.49 eV) and good absorption coefficient (10{sup 4} cm{sup −1}), were obtained for the film annealed at 500 °C for 30 min in nitrogen. - Highlights: • Prepared CZTS film through one-step liquid based approach using non-toxic chemicals. • Studied the effect of N{sub 2} annealing on structural, optical and electrical properties. • The phase pure CZTS absorber film exhibited excellent photovoltaic properties • The film annealed at 500 °C for 30 min in nitrogen exhibited optimum properties.

  17. Elevated temperature study of Nd-Fe-B--based magnets with cobalt and dysprosium additions

    International Nuclear Information System (INIS)

    Gauder, D.R.; Froning, M.H.; White, R.J.; Ray, A.E.

    1988-01-01

    This paper discusses the elevated temperature performance of Nd-Fe-B magnets containing 0--15 wt. % cobalt substitutions for iron and 0--10 wt. % dysprosium substitutions for neodymium. Test samples were prepared using conventional powder metallurgy techniques. Elevated temperature hysteresis loop and open-circuit measurements were performed on the samples to investigate irreversible losses and long term aging losses at 150 0 C. Magnets with high amounts of both cobalt and dysprosium exhibited lower losses of coercivity and magnetization. Dysprosium had more influence on the elevated temperature performance of the material than did cobalt

  18. Effect of Annealing on Strain-Temperature Response under Constant Tensile Stress in Cold-Worked NiTi Thin Wire

    OpenAIRE

    Yan, Xiaojun; Van Humbeeck, Jan

    2011-01-01

    The present paper aims to understand the influence of annealing on the strain-temperature response of a cold-worked NiTi wire under constant tensile stress. It was found that transformation behavior, stress-strain relationship, and strain-temperature response of the cold-worked NiTi wire are strongly affected by the annealing temperature. Large martensitic strains can be reached even though the applied stress is below the plateau stress of the martensite phase. At all stress levels transforma...

  19. Elevated temperature and high pressure large helium gas loop

    International Nuclear Information System (INIS)

    Sakasai, Minoru; Midoriyama, Shigeru; Miyata, Toyohiko; Nakase, Tsuyoshi; Izaki, Makoto

    1979-01-01

    The development of high temperature gas-cooled reactors especially aiming at the multi-purpose utilization of nuclear heat energy is carried out actively in Japan and West Germany. In Japan, the experimental HTGR of 50 MWt and 1000 deg C outlet temperature is being developed by Japan Atomic Energy Research Institute and others since 1969, and the development of direct iron-making technology utilizing high temperature reducing gas was started in 1973 as the large project of Ministry of Internalional Trade and Industry. Kawasaki Heavy Industries, Ltd., Has taken part in these development projects, and has developed many softwares for nuclear heat design, system design and safety design of nuclear reactor system and heat utilization system. In hardwares also, efforts have been exerted to develop the technologies of design and manufacture of high temperature machinery and equipments. The high temperature, high pressure, large helium gas loop is under construction in the technical research institute of the company, and it is expected to be completed in December, 1979. The tests planned are that of proving the dynamic performances of the loop and its machinery and equipments and the verification of analysis codes. The loop is composed of the main circulation system, the objects of testing, the helium gas purifying system, the helium supplying and evacuating system, instruments and others. (Kako, I.)

  20. Elevated temperature stress strain behavior of beryllium powder product

    International Nuclear Information System (INIS)

    Abeln, S.P.; Field, R.; Mataya, M.C.

    1995-01-01

    Several grades of beryllium powder product were tested under isothermal conditions in compression over a temperature range of room temperature to 1000 C and a strain rate range from 0.001 s -1 to 1 s -1 . Samples were compressed to a total strain of 1 (64% reduction in height). It is shown that all the grades are strain rate sensitive and that strain rate sensitivity increases with temperature. Yield points were exhibited by some grades up to a temperature of 500 C, and appeared to be primarily dependent on prior thermal history which determined the availability of mobile dislocations. Serrated flow in the form of stress drops was seen in all the materials tested and was most pronounced at 500 C. The appearance and magnitude of the stress drops were dependent on accumulated strain, strain rate, sample orientation, and composition. The flow stress and shape of the flow curves differed significantly from grade to grade due to variations in alloy content, the size and distribution of BeO particles, aging precipitates, and grain size. The ductile-brittle transition temperature (DBTT) was determined for each grade of material and shown to be dependent on composition and thermal treatment. Structure/property relationships are discussed using processing history, microscopy (light and transmission), and property data

  1. High-throughput sequencing of 16S rRNA gene amplicons: effects of extraction procedure, primer length and annealing temperature.

    Science.gov (United States)

    Sergeant, Martin J; Constantinidou, Chrystala; Cogan, Tristan; Penn, Charles W; Pallen, Mark J

    2012-01-01

    The analysis of 16S-rDNA sequences to assess the bacterial community composition of a sample is a widely used technique that has increased with the advent of high throughput sequencing. Although considerable effort has been devoted to identifying the most informative region of the 16S gene and the optimal informatics procedures to process the data, little attention has been paid to the PCR step, in particular annealing temperature and primer length. To address this, amplicons derived from 16S-rDNA were generated from chicken caecal content DNA using different annealing temperatures, primers and different DNA extraction procedures. The amplicons were pyrosequenced to determine the optimal protocols for capture of maximum bacterial diversity from a chicken caecal sample. Even at very low annealing temperatures there was little effect on the community structure, although the abundance of some OTUs such as Bifidobacterium increased. Using shorter primers did not reveal any novel OTUs but did change the community profile obtained. Mechanical disruption of the sample by bead beating had a significant effect on the results obtained, as did repeated freezing and thawing. In conclusion, existing primers and standard annealing temperatures captured as much diversity as lower annealing temperatures and shorter primers.

  2. Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

    Science.gov (United States)

    Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

    2010-03-01

    Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

  3. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    Science.gov (United States)

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  4. Room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride induced by milling and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Bolokang, Amogelang S., E-mail: Sylvester.Bolokang@transnet.net [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Transnet Engineering, Product Development, Private Bag X 528, Kilnerpark, 0127 (South Africa); Tshabalala, Zamaswazi P. [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Malgas, Gerald F. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535 (South Africa); Kortidis, Ioannis [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); West Virginia University, Department of Mechanical & Aerospace Engineering, Evansdale Campus, Morgantown, WV, 26506 (United States); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA9300 (South Africa); Motaung, David E., E-mail: dmotaung@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa)

    2017-06-01

    We report on the room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride prepared by milling and annealing at 1100 °C in a nitrogen gas environment. Structural analyses revealed a metastable orthorhombic TiO{sub 2} phase after milling for 120 h. The 120 h milled TiO{sub 2} particles and subsequently annealed in nitrogen gas at 1100 °C showed the formation of titanium oxynitride (TiO{sub x}N{sub y}) with a tetragonal crystal structure. An FCC metastable TiO{sub x}N{sub y} phase was also observed with a lattice parameter a = 4.235 Å. The vibrating sample magnetometer and electron paramagnetic analyses showed that the milled and TiO{sub x}N{sub y} samples possess room temperature ferromagnetism. Gas sensing measurements were carried out toward CH{sub 4} and H{sub 2} gases. The TiO{sub x}N{sub y} nanostructures demonstrated higher sensing response and selectivity to CH{sub 4} gas at room temperature. The enhanced response of 1010 and sensitivity of 50.12 ppm{sup -1} at a concentration of 20 ppm CH{sub 4} are associated with higher surface area, pore diameter and surface defects such as oxygen vacancies and Ti{sup 3+}, as evidenced from the Brunauer–Emmet–Teller, photoluminescence, electron paramagnetic resonance and x-ray photoelectron analyses. - Highlights: • Ball milled of TiO{sub 2} structure revealed metastable orthorhombic phase. • Upon nitridation tetragonal and FCC TiO{sub x}N{sub y} crystal structures were induced. • The magnetic properties of TiO{sub 2} nanoparticles was transformed by milling. • TiO{sub x}N{sub y} sensing response for CH{sub 4} gas at room temperature was high.

  5. Low cycle fatigue behavior of Sanicro25 steel at room and at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Polák, Jaroslav, E-mail: polak@ipm.cz [Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Žižkova 22, 616 62 Brno (Czech Republic); CEITEC, Institute of Physics of Materials Academy of Sciences of the Czech Republic, Žižkova 22, Brno (Czech Republic); Petráš, Roman; Heczko, Milan; Kuběna, Ivo [Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Žižkova 22, 616 62 Brno (Czech Republic); Kruml, Tomáš [Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Žižkova 22, 616 62 Brno (Czech Republic); CEITEC, Institute of Physics of Materials Academy of Sciences of the Czech Republic, Žižkova 22, Brno (Czech Republic); Chai, Guocai [Sandvik Materials Technology, SE-811 81 Sandviken (Sweden); Linköping University, Engineering Materials, SE-581 83 Linköping (Sweden)

    2014-10-06

    Austenitic heat resistant Sanicro 25 steel developed for high temperature applications in power generation industry has been subjected to strain controlled low cycle fatigue tests at ambient and at elevated temperature in a wide interval of strain amplitudes. Fatigue hardening/softening curves, cyclic stress–strain curves and fatigue life curves were evaluated at room temperature and at 700 °C. The internal dislocation structures of the material at room and at elevated temperature were studied using transmission electron microscopy. High resolution surface observations and FIB cuts revealed early damage at room temperature in the form of persistent slip bands and at elevated temperature as oxidized grain boundary cracks. Dislocation arrangement study and surface observations were used to identify the cyclic slip localization and to discuss the fatigue softening/hardening behavior and the temperature dependence of the fatigue life.

  6. Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

    Science.gov (United States)

    Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

    2018-04-01

    Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

  7. Behavior of reinforcement SCC beams under elevated temperatures

    Science.gov (United States)

    Fathi, Hamoon; Farhang, Kianoosh

    2015-09-01

    This experimental study focuses on the behavior of heated reinforced concrete beams. Four types of concrete mixtures were used for the tested self-compacting concrete beams. A total of 72 reinforced concrete beams and 72 standard cylindrical specimens were tested. The compressive strength under uniaxial loading at 23 °C ranged from 30 to 45 MPa. The specimens were exposed to different temperatures. The test parameters of interest were the compressive strength and the temperature of the specimens. The effect of changes in the parameters was examined so as to control the behavior of the tested concrete and that of the reinforced concrete beam. The results indicated that flexibility and compressive strength of the reinforced concrete beams decreased at higher temperatures. Furthermore, heating beyond 400 °C produced greater variations in the structural behavior of the materials in both the cylindrical samples and the reinforced concrete beams.

  8. Technology for Elevated Temperature Tests of Structural Panels

    Science.gov (United States)

    Thornton, E. A.

    1999-01-01

    A technique for full-field measurement of surface temperature and in-plane strain using a single grid imaging technique was demonstrated on a sample subjected to thermally-induced strain. The technique is based on digital imaging of a sample marked by an alternating line array of La2O2S:Eu(+3) thermographic phosphor and chromium illuminated by a UV lamp. Digital images of this array in unstrained and strained states were processed using a modified spin filter. Normal strain distribution was determined by combining unstrained and strained grid images using a single grid digital moire technique. Temperature distribution was determined by ratioing images of phosphor intensity at two wavelengths. Combined strain and temperature measurements demonstrated on the thermally heated sample were DELTA-epsilon = +/- 250 microepsilon and DELTA-T = +/- 5 K respectively with a spatial resolution of 0.8 mm.

  9. Design considerations for CRBRP heat transport system piping operating at elevated temperatures

    International Nuclear Information System (INIS)

    Pollono, L.P.; Mello, R.M.

    1979-01-01

    The heat transport system sodium piping for the Clinch River Breeder Reactor Plant (CRBRP) within the reactor containment building must withstand high temperatures for long periods of time. Each phase of the mechanical design process of the piping system is influenced by elevated temperature considerations which include material thermal creep effects, ratchetting caused by rapid temperature transients and stress relaxation, and material degradation effects. The structural design philosophy taken to design the CRBRP piping operating in a high temperature environment is described. The resulting design of the heat transport system piping is presented along with a discussion of special features that resulted from the elevated temperature considerations

  10. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

    International Nuclear Information System (INIS)

    Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

    2014-01-01

    TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

  11. Tensile Strength of Finger Joints at Elevated Temperatures

    DEFF Research Database (Denmark)

    Nielsen, Peter C.; Olesen, Frits Bolonius

    A series of test s aimed a t establishing the effect of temperature upon the tensile strength parallel-to-grain of finger jointed laminae for glulam has been conducted in the Fire Research Laboratory at Aalborg University Centre. The objective of this report is to present the background...

  12. Elevated temperature axial and torsional fatigue behavior of Haynes 188

    Science.gov (United States)

    Bonacuse, Peter J.; Kalluri, Sreeramesh

    1992-06-01

    The results of high-temperature axial and torsional low-cycle fatigue experiments performed on Haynes 188, a wrought cobalt-base superalloy, are reported. Fatigue tests were performed at 760 C in air on thin-walled tubular specimens at various ranges under strain control. Data are also presented for coefficient of thermal expansion, elastic modulus, and shear modulus at various temperatures from room to 1000 C, and monotonic and cyclic stress-strain curves in tension and in shear at 760 C. The data set is used to evaluate several multiaxial fatigue life models (most were originally developed for room temperature multiaxial life prediction) including von Mises equivalent strain range (ASME boiler and pressure vessel code), Manson-Halford, Modified Multiaxiality Factor (proposed here), Modified Smith-Watson-Topper, and Fatemi-Socie-Kurath. At von Mises equivalent strain ranges (the torsional strain range divided by the square root of 3, taking the Poisson's ratio to be 0.5), torsionally strained specimens lasted, on average, factors of 2 to 3 times longer than axially strained specimens. The Modified Multiaxiality Factor approach shows promise as a useful method of estimating torsional fatigue life from axial fatigue data at high temperatures. Several difficulties arose with the specimen geometry and extensometry used in these experiments. Cracking at extensometer probe indentations was a problem at smaller strain ranges. Also, as the largest axial and torsional strain range fatigue tests neared completion, a small amount of specimen buckling was observed.

  13. Whey protein concentrate storage at elevated temperature and humidity

    Science.gov (United States)

    Dairy processors are finding new export markets for whey protein concentrate (WPC), a byproduct of cheesemaking, but they need to know if full-sized bags of this powder will withstand high temperature and relative humidity (RH) levels during unrefrigerated storage under tropical conditions. To answ...

  14. Isopiestic studies of aqueous solutions at elevated temperatures

    International Nuclear Information System (INIS)

    Holmes, H.F.; Mesmer, R.E.

    1981-01-01

    Isopiestic measurements have been made for LiCl(aq) and CsCl(aq) over the temperature range 382.96 to 473.61 K. NcCl(aq) served as the reference electrolyte for the calculation of osmotic coefficients and the molalities ranged from about 0.6 to 6 mol kg -1 , for NaCl(aq). An ion-interaction model gave an excellent fit to the experimental osmotic coefficients with a standard error of fit ranging from 0.0004 to 0.0016 in the osmotic coefficient. Parameters obtained from the fit were used to calculate the activity coefficients. The osmotic and activity coefficients both decreased with increasing temperature over this temperature range. LiCl(aq) is somewhat unusual among the alkali-metal chlorides in that the osmotic (and activity) coefficient is much more dependent on molality at the higher molalities and there is no maximum between 273.15 and 373.15 K in the osmotic coefficient as a function of temperature. For both LiCl(aq) and CsCl(aq) there is an excellent correlation between the isopiestic results and the vapor pressures of Lindsay and Liu. Existing electrochemical results between 283.15 and 343.15 K are consistent with the calculated activity coefficients for CsCl(aq). (author)

  15. Effects of Elevated Temperature on Concrete with Recycled Coarse Aggregates

    Science.gov (United States)

    Salau, M. A.; Oseafiana, O. J.; Oyegoke, T. O.

    2015-11-01

    This paper discusses the effects of heating temperatures of 200°C, 400°C and 600°C each for 2 hours at a heating rate of 2.5°C/min on concrete with the content of Natural Coarse Aggregates (NCA) partially replaced with Recycled Coarse Aggregates (RCA), obtained from demolished building in the ratio of 0%, 15% and 30%.There was an initial drop in strength from 100°C to 200°C which is suspected to be due to the relatively weak interfacial bond between the RCA and the hardened paste within the concrete matrix;a gradual increase in strength continued from 200°C to 450°C and steady drop occurred again as it approached 600°C.With replacement proportion of 0%, 15% and 30% of NCA and exposure to peak temperature of 600°C, a relative concrete strength of 23.6MPa, 25.3MPa and 22.2MPa respectively can be achieved for 28 days curing age. Furthermore, RAC with 15% NCA replacement when exposed to optimum temperature of 450°C yielded high compressive strength comparable to that of control specimen (normal concrete). In addition, for all concrete samples only slight surface hairline cracks were noticed as the temperature approached 400°C. Thus, the RAC demonstrated behavior just like normal concrete and may be considered fit for structural use.

  16. Evolution of grain boundary character distributions in alloy 825 tubes during high temperature annealing: Is grain boundary engineering achieved through recrystallization or grain growth?

    International Nuclear Information System (INIS)

    Bai, Qin; Zhao, Qing; Xia, Shuang; Wang, Baoshun; Zhou, Bangxin; Su, Cheng

    2017-01-01

    Grain boundary engineering (GBE) of nickel-based alloy 825 tubes was carried out with different cold drawing deformations by using a draw-bench on a factory production line and subsequent annealing at various temperatures. The microstructure evolution of alloy 825 during thermal-mechanical processing (TMP) was characterized by means of the electron backscatter diffraction (EBSD) technique to study the TMP effects on the grain boundary network and the evolution of grain boundary character distributions during high temperature annealing. The results showed that the proportion of ∑ 3 n coincidence site lattice (CSL) boundaries of alloy 825 tubes could be increased to > 75% by the TMP of 5% cold drawing and subsequent annealing at 1050 °C for 10 min. The microstructures of the partially recrystallized samples and the fully recrystallized samples suggested that the proportion of low ∑ CSL grain boundaries depended on the annealing time. The frequency of low ∑ CSL grain boundaries increases rapidly with increasing annealing time associating with the formation of large-size highly-twinned grains-cluster microstructure during recrystallization. However, upon further increasing annealing time, the frequency of low ∑ CSL grain boundaries decreased markedly during grain growth. So it is concluded that grain boundary engineering is achieved through recrystallization rather than grain growth. - Highlights: •The grain boundary engineering (GBE) is applicable to 825 tubes. •GBE is achieved through recrystallization rather than grain growth. •The low ∑ CSL grain boundaries in 825 tubes can be increased to > 75%.

  17. Annealing behavior and shape memory effect in NiTi alloy processed by equal-channel angular pressing at room temperature

    International Nuclear Information System (INIS)

    Shahmir, Hamed; Nili-Ahmadabadi, Mahmoud; Wang, Chuan Ting; Jung, Jai Myun; Kim, Hyoung Seop; Langdon, Terence G.

    2015-01-01

    A martensitic NiTi shape memory alloy was processed successfully by equal-channel angular pressing (ECAP) for one pass at room temperature using a core–sheath billet design. The annealing behavior and shape memory effect of the ECAP specimens were studied followed by post-deformation annealing (PDA) at 673 K for various times. The recrystallization and structural evolution during annealing were investigated by differential scanning calorimetry, dilatometry, X-ray diffraction, transmission electron microscopy and microhardness measurements. The results indicate that the shape memory effect improves by PDA after ECAP processing. Annealing for 10 min gives a good shape memory effect which leads to a maximum in recoverable strain of 6.9 pct upon heating where this is more than a 25 pct improvement compared with the initial state

  18. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

    International Nuclear Information System (INIS)

    Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

    2015-01-01

    Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

  19. Analysis and evaluation system for elevated temperature design of pressure vessels

    International Nuclear Information System (INIS)

    Hayakawa, Teiji; Sayawaki, Masaaki; Nishitani, Masahiro; Mii, Tatsuo; Murasawa, Kanji

    1977-01-01

    In pressure vessel technology, intensive efforts have recently been made to develop the elevated temperature design methods. Much of the impetus of these efforts has been provided mainly by the results of the Liquid Metal Fast Breeder Reactor (LMFBR) and more recently, of the High Temperature Gas-cooled Reactor (HTGR) Programs. The pressure vessels and associated components in these new type nuclear power plants must operate for long periods at elevated temperature where creep effects are significant and then must be designed by rigorous analysis for high reliability and safety. To carry out such an elevated temperature designing, numbers of highly developed analysis and evaluation techniques, which are so complicated as to be impossible by manual work, are indispensable. Under these circumstances, the authors have made the following approaches in the study: (1) Study into basic concepts and the associated techniques in elevated temperature design. (2) Systematization (Analysis System) of the procedure for loads and stress analyses. (3) Development of post-processor, ''POST-1592'', for strength evaluation based on ASME Code Case 1592-7. By linking the POST-1592 together with the Analysis System, an analysis and evaluation system is developed for an elevated temperature design of pressure vessels. Consequently, designing of elevated temperature vessels by detailed analysis and evaluation has easily and effectively become feasible by applying this software system. (auth.)

  20. Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

    Directory of Open Access Journals (Sweden)

    Skonieczny R.

    2016-09-01

    Full Text Available The cobalt phthalocyanine (CoPc thin films (300 nm thick deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing of metallophthalocyanine (α and β form from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

  1. Fast wettability transition from hydrophilic to superhydrophobic laser-textured stainless steel surfaces under low-temperature annealing

    Science.gov (United States)

    Ngo, Chi-Vinh; Chun, Doo-Man

    2017-07-01

    Recently, the fabrication of superhydrophobic metallic surfaces by means of pulsed laser texturing has been developed. After laser texturing, samples are typically chemically coated or aged in ambient air for a relatively long time of several weeks to achieve superhydrophobicity. To accelerate the wettability transition from hydrophilicity to superhydrophobicity without the use of additional chemical treatment, a simple annealing post process has been developed. In the present work, grid patterns were first fabricated on stainless steel by a nanosecond pulsed laser, then an additional low-temperature annealing post process at 100 °C was applied. The effect of 100-500 μm step size of the textured grid upon the wettability transition time was also investigated. The proposed post process reduced the transition time from a couple of months to within several hours. All samples showed superhydrophobicity with contact angles greater than 160° and sliding angles smaller than 10° except samples with 500 μm step size, and could be applied in several potential applications such as self-cleaning and control of water adhesion.

  2. Elevated-temperature (6000F), manual contact ultrasonic examination

    International Nuclear Information System (INIS)

    Donnelly, C.W.

    1981-01-01

    Manual contact ultrasonic examination at temperatures above 250 0 F has not been successful in providing meaningful results. Sensitivity of standard transducers degrades rapidly at 250 0 F and above. It has been demonstrated that by using standard transducers and commercially available wedges and couplants in combination with a couplant/cooler system, manual contact ultrasonic examination can be performed at 600 0 F for an essentially 100% duty cycle in conformance to the sensitivity requirement of the ASME B and PV Code

  3. Performance of proton exchange membrane fuel cells at elevated temperature

    International Nuclear Information System (INIS)

    Shyu, Jin-Cherng; Hsueh, Kan-Lin; Tsau, Fanghei

    2011-01-01

    Highlights: → At 1 atm, cell has best performance (∼1300 mA/cm at 0.6 V) at 100 deg. C and RH = 100%. → The A value in Eq. increased with increases in the back pressure and RH. →R i dramatically decreased at back pressure of 1 atm. → At each RH, R i decreased and then increased as cell temperature increased at 1 atm. - Abstract: The polarization curves of a single PEMFC having a Nafion membrane fed with H 2 /O 2 with relative humidity (RH) of 35%, 70% and 100% were measured at cell temperatures ranging from 65 deg. C to 120 deg. C at back pressures of 0 atm and 1 atm, respectively. Measured results showed that the best cell performance at 0.6 V operated within 65-120 deg. C at zero back pressure was 1000 mA cm -2 at 65 deg. C and RH = 100%, while the best cell performance at 1 atm back pressure was 1300 mA cm -2 at 100 deg. C and RH = 100%. Based on the analysis of impedance data measured at anode and cathode humidification temperatures of 90 deg. C and cell temperature of 100 deg. C at back pressures of 0 and 1 atm (90-100p0 and 90-100p1), it could be found that the membrane resistance was reduced and the catalyst became more active as the back pressure increases. The present results showed that increasing back pressure was able to dramatically improve cell performance and the effect of the back pressure surpassed that of humidification in the internal resistance of cell.

  4. Analysis of coupled transport phenomena in concrete at elevated temperatures

    OpenAIRE

    Beneš, Michal; Štefan, Radek; Zeman, Jan

    2010-01-01

    In this paper, we study a non-linear numerical scheme arising from the implicit time discretization of the Ba\\v{z}ant-Thonguthai model for hygro-thermal behavior of concrete at high temperatures. Existence and uniqueness of the time-discrete solution in two dimensions is established using the theory of pseudomonotone operators in Banach spaces. Next, the spatial discretization is accomplished by the conforming finite element method. An illustrative numerical example shows that the numerical m...

  5. Effect of annealing temperature on microstructure and superelastic properties of a Ti-18Zr-4.5Nb-3Sn-2Mo alloy.

    Science.gov (United States)

    Fu, Jie; Kim, Hee Young; Miyazaki, Shuichi

    2017-01-01

    In this study a new superelastic Ti-18Zr-4.5Nb-3Sn-2Mo alloy was prepared by adding 2at% of Mo as a substitute for Nb to the Ti-18Zr-11Nb-3Sn alloy, and heat treatment at different temperatures was conducted. The temperature dependence of superelasticity and annealing texture was investigated. Texture showed a dependence of annealing temperature: the specimen annealed at 923K for 0.3ks exhibited {113} β β type texture which was similar to the deformation texture, while specimens annealed at 973, 1073K, and 1173K showed {001} β β type recrystallization texture which was preferable for recovery strain. The largest recovery strain of 6.2%, which is the same level as that of the Ti-18Zr-11Nb-3Sn alloy, was obtained in the specimen annealed at 1173K for 0.3ks due to the well-developed {001} β β type recrystallization texture. The Ti-18Zr-3Nb-3Sn-2Mo alloy presented a higher tensile strength compared with the Ti-18Zr-11Nb-3Sn alloy when heat treated at 1173K for 0.3ks, which was due to the solid solution strengthening effect of Mo. Annealing at 923K for 0.3ks was effective in obtaining a good combination of a high strength as 865MPa and a large recovery strain as 5.6%. The high recovery strain was due to the high stress at which the maximum recovery stain was obtained which was attributed to the small grain size formed at low annealing temperature. Copyright © 2016 Elsevier Ltd. All rights reserved.

  6. Creep testing of nodular iron at ambient and elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Martinsson, Aasa; Andersson-Oestling, Henrik C.M.; Seitisleam, Facredin; Wu, Rui; Sandstroem, Rolf (Swerea KIMAB AB, Stockholm (Sweden))

    2010-12-15

    The creep strain at room temperature, 100 and 125 deg C has been investigated for the ferritic nodular cast iron insert intended for use as the load-bearing part of canisters for long term disposal of spent nuclear fuel. The microstructure consisted of ferrite, graphite nodules of different sizes, compacted graphite and pearlite. Creep tests have been performed for up to 41,000 h. The specimens were cut out from material taken from two genuine inserts, I30 and I55. After creep testing, the specimens from the 100 deg C tests were hardness tested and a metallographic examination was performed. Creep strains at all temperatures appear to be logarithmic, and accumulation of creep strain diminishes with time. The time dependence of the creep strain is consistent to the W-model for primary creep. During the loading plastic strains up to 1% appeared. The maximum recorded creep strain after the loading phase was 0.025%. This makes the creep strains technically insignificant. Acoustic emission recordings during the loading of the room temperature tests showed no sounds or other evidence of microcracking during the loading phase. There is no evidence that the hardness or the graphite microstructure changed during the creep tests

  7. Elevated transition temperature in Ge doped VO2 thin films

    Science.gov (United States)

    Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

    2017-07-01

    Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

  8. Fuel retention under elevated wall temperature in KSTAR with a carbon wall

    Science.gov (United States)

    Cao, B.; Hong, S. H.

    2018-03-01

    The fuel retention during KSTAR discharges with elevated wall temperature (150 °C) has been studied by using the method of global particle balance. The results show that the elevated wall temperature could reduce the dynamic retention via implantation and absorption, especially for the short pulse shots with large injected fuel particles. There is no signature changing of long-term retention, which related to co-deposition, under elevated wall temperature. For soft-landing shots (normal shots), the exhausted fuel particles during discharges is larger with elevated wall temperature than without, but the exhausted particles after discharges within 90 s looks similar. The outgassing particles because of disruption could be exhausted within 15 s.

  9. Element size and other restrictions in finite-element modeling of reinforced concrete at elevated temperatures

    DEFF Research Database (Denmark)

    Carstensen, Josephine Voigt; Jomaas, Grunde; Pankaj, Pankaj

    2013-01-01

    to extend this approach for RC at elevated temperatures. Prior to the extension, the approach is investigated for associated modeling issues and a set of limits of application are formulated. The available models of the behavior of plain concrete at elevated temperatures were used to derive inherent......One of the accepted approaches for postpeak finite-element modeling of RC comprises combining plain concrete, reinforcement, and interaction behaviors. In these, the postpeak strain-softening behavior of plain concrete is incorporated by the use of fracture energy concepts. This study attempts...... fracture energy variation with temperature. It is found that the currently used tensile elevated temperature model assumes that the fracture energy decays with temperature. The existing models in compression also show significant decay of fracture energy at higher temperatures (>400°) and a considerable...

  10. Correlation between stoichiometry and surface structure of the polar MgAl2O4(100) surface as a function of annealing temperature

    DEFF Research Database (Denmark)

    Jensen, Thomas Nørregaard; Rasmussen, Morten Karstoft; Knudsen, Jan

    2015-01-01

    is found to significantly increase as the surface is sputtered and annealed in oxygen at intermediate temperatures ranging from 800-1000 [degree]C. The Al excess is explained by the observed surface structure, where the formation of nanometer sized pits and elongated patches with Al terminated step edges....... The excess of Al and high concentration of octahedral vacancies, very interestingly means, that the top few surface layers of the MgAl2O4(100) adopts a surface structure similar to that of a spinel-like transition Al2O3 film. However, after annealing at a high temperature of 1200 [degree]C, the Al/Mg ratio...... are filled by Mg from the bulk, due to the increased mobility at high annealing temperatures....

  11. Effect of methyl mercaptophos in different combinations with elevated atmospheric temperature and ultraviolet radiation

    International Nuclear Information System (INIS)

    Gabovich, R.D.; Murashko, V.A.

    1975-01-01

    Rats were exposed to methyl mercaptophos (I) vapor combined with various doses of uv irradiation at 22deg or 37deg. Changes in the levels of serum alkaline phosphatase, hepatic and serum cholinestrerase, adrenal ascorbic acid, and other parameters indicated that the animals' resistance to the effects of I was decreased by: a) low uv irradiation, b) elevated temperature, or c) combined elevated temperature and excessive uv irradiation

  12. Microstructure and elevated-temperature erosion-oxidation behaviour of aluminized 9Cr-1Mo Steel

    OpenAIRE

    Huttunen, E.; Honkanen, M.; Tsipas, Sophia Alexandra; Omar, H.; Tsipas, D.

    2012-01-01

    Degradation of materials by a combination of erosive wear and atmospheric oxidation at elevated temperatures constitutes a problem in some power generation processes, such as fluidized-bed combustion. In this work, 9Cr-1Mo steel, a common tube material in combustion chambers, is coated by a pack cementation method from an Al-containing pack in order to improve the resistance to erosion-oxidation at elevated temperatures. The resulting coating is studied in terms of microstructure and microhar...

  13. Modeling Silicate Weathering for Elevated CO2 and Temperature

    Science.gov (United States)

    Bolton, E. W.

    2016-12-01

    A reactive transport model (RTM) is used to assess CO2 drawdown by silicate weathering over a wide range of temperature, pCO2, and infiltration rates for basalts and granites. Although RTM's have been used extensively to model weathering of basalts and granites for present-day conditions, we extend such modeling to higher CO2 that could have existed during the Archean and Proterozoic. We also consider a wide range of surface temperatures and infiltration rates. We consider several model basalt and granite compositions. We normally impose CO2 in equilibrium with the various atmospheric ranges modeled and CO2