Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

International Nuclear Information System (INIS)

Glasko, J.M.; Elliman, R.G.; Zou, J.; Cockayne, D.J.H.; Fitz Gerald, J.D.

1998-01-01

High energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. In this study, the effect of subsequent thermal annealing was investigated. Three distinct annealing stages were identified and correlated with the evolution of the defect microstructure. In the temperature range from 350 to 600 deg C, a gradual recovery of strain is observed. This is believed to result from the annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600 deg C, consistent with an excess vacancy concentration in the irradiated alloy layer. The 600 to 750 deg C range is marked by pronounced maximal recovery of strain, and is correlated with the dissolution of faulted loops in the substrate. At temperatures in the range 750-1000 deg C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, towards the surface. (authors)

High-temperature annealing of graphite: A molecular dynamics study

Science.gov (United States)

Petersen, Andrew; Gillette, Victor

2018-05-01

A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

International Nuclear Information System (INIS)

Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

1977-01-01

The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

Annealing temperature effect on self-assembled Au droplets on Si (111).

Science.gov (United States)

Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

2013-12-13

We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

Thermal annealing studies in muscovite and in quartz

International Nuclear Information System (INIS)

Roberts, J.H.; Gold, R.; Ruddy, F.H.

1979-06-01

In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2010-01-01

and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

International Nuclear Information System (INIS)

Chen, Pei-Yun; Chen, C.C.; Harmon, Julie P.; Lee, Sanboh

2014-01-01

This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime

The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Chen, Pei-Yun [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chen, C.C. [Institute of Nuclear Energy Research, Longtan, Taoyuan 325, Taiwan (China); Harmon, Julie P. [Department of Chemistry, University of South Florida, Tampa, FL 33620 (United States); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

2014-08-01

This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime.

Influence of low-temperature annealing on InSb properties

International Nuclear Information System (INIS)

Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

1975-01-01

Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

International Nuclear Information System (INIS)

Kim, J.C.; Ji, J.-Y.; Kline, J.S.; Tucker, J.R.; Shen, T.-C.

2003-01-01

Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3-1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 deg. C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication

Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

Energy Technology Data Exchange (ETDEWEB)

Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

1975-01-01

The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

Void nucleation at elevated temperatures under cascade-damage irradiation

International Nuclear Information System (INIS)

Semenov, A.A.; Woo, C.H.

2002-01-01

The effects on void nucleation of fluctuations respectively due to the randomness of point-defect migratory jumps, the random generation of free point defects in discrete packages, and the fluctuating rate of vacancy emission from voids are considered. It was found that effects of the cascade-induced fluctuations are significant only at sufficiently high total sink strength. At lower sink strengths and elevated temperatures, the fluctuation in the rate of vacancy emission is the dominant factor. Application of the present theory to the void nucleation in annealed pure copper neutron-irradiated at elevated temperatures with doses of 10 -4 -10 -2 NRT dpa showed reasonable agreement between theory and experiment. This application also predicts correctly the temporal development of large-scale spatial heterogeneous microstructure during the void nucleation stage. Comparison between calculated and experimental void nucleation rates in neutron-irradiated molybdenum at temperatures where vacancy emission from voids is negligible showed reasonable agreement as well. It was clearly demonstrated that the athermal shrinkage of relatively large voids experimentally observable in molybdenum at such temperatures may be easily explained in the framework of the present theory

Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

International Nuclear Information System (INIS)

Galloway, R.B.

2002-01-01

It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

Note: A wide temperature range MOKE system with annealing capability.

Science.gov (United States)

Chahil, Narpinder Singh; Mankey, G J

2017-07-01

A novel sample stage integrated with a longitudinal MOKE system has been developed for wide temperature range measurements and annealing capabilities in the temperature range 65 K temperatures without adversely affecting the cryostat and minimizes thermal drift in position. In this system the hysteresis loops of magnetic samples can be measured simultaneously while annealing the sample in a magnetic field.

Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

International Nuclear Information System (INIS)

Pantleon, Karen; Somers, Marcel A.J.

2010-01-01

Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

Different annealing temperature suitable for different Mg doped P-GaN

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

Effect of annealing temperature on the mechanical properties of zircaloy-4 cladding

International Nuclear Information System (INIS)

Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

1977-01-01

The mechanical properties of zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. Hoop creep characteristics of zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The critical annealing temperature at which a minimum creep strain occurs decreases as the applied stress increases. An additional test at 700F and 30 ksi hoop stress was conducted to demonstrate that the critical annealing temperature is essentially independent of the test temperature. Plausible explanations based on differing substructures developed in cold-worked stress-relieved material are forwarded. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. R-parameters were determined from in situ transverse strain gage measurements in uniaxial tensile tests. P-parameters were calculated from uniaxial test data (R and yield stress) and hoop yield stress determined in biaxial, closed-end internal pressurization tests

Effects of annealing temperature in a metal alloy nano-dot memory

International Nuclear Information System (INIS)

Lee, Jung Min; Lee, Gae Hun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Tetsu

2011-01-01

The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ∼700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 .deg. C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

Annealing of Al implanted 4H silicon carbide

International Nuclear Information System (INIS)

Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

2006-01-01

Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

Synthesis and characterization of nickel oxide particulate annealed at different temperatures

Science.gov (United States)

Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

2018-04-01

Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

Science.gov (United States)

Dunz, M.; Schmalhorst, J.; Meinert, M.

2018-05-01

We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

Science.gov (United States)

Weinberg, I.; Swartz, C. K.

1980-01-01

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

Effects of annealing temperatures on the physicochemical properties of nickel-phosphorus deposits

International Nuclear Information System (INIS)

Bai, Allen; Hu, C.-C.

2003-01-01

The dependence of physicochemical properties, including microhardness, magnetism, morphology, crystalline information, roughness factor and hydrogen evolution ability, on the phosphorus content, varying from 0 to 28 atomic percentage (at.%), of Ni-P deposits with annealing in air at eight temperatures (i.e., 100, 200, 300, 400, 500, 600, 700 and 800 deg. C) were systematically compared. The microhardness reached a maximum at 400 deg. C due to the crystallization of Ni and Ni 3 P at 400 deg. C and the significant diffusion of Cu into the Ni-P deposit at temperatures ≥500 deg. C, confirmed by the depth profiles of Ni, P, Cu and O elements. The paramagnetism of Ni-P deposit was gradually transformed into ferromagnetism at 400 deg. C, attributable to the phase separation of Ni and Ni 3 P. The roughness factor, R a , of the deposits with P contents ≤12 at.% were increased with increasing the annealing temperature at temperatures a of the deposits with 17-28 at.% of P is approximately independent of the annealing temperature. The rate of hydrogen evolution decreased with increasing the annealing temperature because the specific activity (i/R a ) of the Ni-P deposits was decreased with increasing the annealing temperature

Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature

International Nuclear Information System (INIS)

Chithambo, M.L.

2015-01-01

The influence of annealing, irradiation dose, preheating and measurement temperature on luminescence lifetimes has been studied in quartz annealed at 1000 °C. The measurements were supplemented by studies on quartz annealed at 900 and 800 °C. Lifetimes increase with dose as well as with temperature and duration of annealing between 800 and 1000 °C. Preheating produces the same effect. The changes are accounted for in terms of hole-transfer from the non-radiative luminescence centre to and between radiative centres. The influence of measurement temperature on lifetimes depends on whether the stimulation is carried out from ambient to 200 °C or otherwise. This result is unlike that in quartz annealed at or below 500 °C where lifetimes are independent of the direction of heating. In particular, lifetimes decrease monotonically when measurements are made from 20 to 200 °C but not when recorded from 200 to 20 °C. The latter produces a pattern resembling that in quartz annealed up to 500 °C. The results are concluded as evidence of thermal effects on separate luminescence centres. In support of this, different values of the activation energy for thermal quenching were found for each supposed luminescence centre. The change of the corresponding luminescence intensity with temperature is also qualitatively consistent with this notion. - Highlights: • Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature is reported. • Lifetimes increase with dose, annealing between 800 and 1000 °C, and preheating. • Lifetimes under stimulation temperature are affected by direction of heating. • Changes are accounted for in terms of hole-transfer luminescence centres.

High-Temperature Electrical Insulation Behavior of Alumina Films Prepared at Room Temperature by Aerosol Deposition and Influence of Annealing Process and Powder Impurities

Science.gov (United States)

Schubert, Michael; Leupold, Nico; Exner, Jörg; Kita, Jaroslaw; Moos, Ralf

2018-04-01

Alumina (Al2O3) is a widely used material for highly insulating films due to its very low electrical conductivity, even at high temperatures. Typically, alumina films have to be sintered far above 1200 °C, which precludes the coating of lower melting substrates. The aerosol deposition method (ADM), however, is a promising method to manufacture ceramic films at room temperature directly from the ceramic raw powder. In this work, alumina films were deposited by ADM on a three-electrode setup with guard ring and the electrical conductivity was measured between 400 and 900 °C by direct current measurements according to ASTM D257 or IEC 60093. The effects of film annealing and of zirconia impurities in the powder on the electrical conductivity were investigated. The conductivity values of the ADM films correlate well with literature data and can even be improved by annealing at 900 °C from 4.5 × 10-12 S/cm before annealing up to 5.6 × 10-13 S/cm after annealing (measured at 400 °C). The influence of zirconia impurities is very low as the conductivity is only slightly elevated. The ADM-processed films show a very good insulation behavior represented by an even lower electrical conductivity than conventional alumina substrates as they are commercially available for thick-film technology.

Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

Science.gov (United States)

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

Science.gov (United States)

Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

1973-01-01

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

International Nuclear Information System (INIS)

Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

1997-01-01

Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

International Nuclear Information System (INIS)

Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

2015-01-01

Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

Very low temperature rise laser annealing of radiation-damaged solar cells in orbit

International Nuclear Information System (INIS)

Poulek, V.

1988-01-01

Solar cells of all space objects are damaged by radiation in orbit. This damage, however, can be removed by laser annealing. A new in-orbit laser regeneration system for both body- and spin-stabilized space objects is proposed. For successful annealing of solar cells damaged by 10 years' radiation dose in orbit it is necessary for the temperature rise in the incidence point of the laser beam to reach about 400 0 C. By continuous regeneration, however, between two annealing cycles the solar cells are hit by about two orders of magnitude lower radiation dose. This makes it possible to carry out the regeneration at a temperature rise well under 1 0 C! If an optimal laser regeneration system is used, such low temperature rise laser annealing of radiation-damaged solar cells is possible. A semiconductor GaAlAs diode laser with output power up to 10 mW CW was used for annealing. Some results of the very low temperature rise annealing experiment are given in this paper. (author)

Influence of annealing time and temperature on the Fe3Al intermetallic alloys microstructure modification

Directory of Open Access Journals (Sweden)

K. Garbala

2011-04-01

Full Text Available There is an industry interesting in intermetallic alloys in recent years. There are widely possibilities to adopt this kind of materials for structural units. More expensive materials can be replaced by them. A property which limits their wider application is the low plasticity at environment and elevated temperatures. In paper the results of the thermal microstructure modification are shown. To this end, the influence of annealing time and temperature on the intermetallic phase Fe3Al grain size was investigated. The impact of these factors on micro-hardness was examined as well. It was found that these operations cause the grain size reduction and the micro-hardness decrease.

Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-03-15

In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

Study of deuterium retention in/release from ITER-relevant Be-containing mixed material layers implanted at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Sugiyama, K., E-mail: kazuyoshi.sugiyama@ipp.mpg.de [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Porosnicu, C. [National Institute for Laser, Plasma and Radiation Physics, EURATOM-MEdC Association, 077125 Bucharest (Romania); Jacob, W.; Roth, J.; Dürbeck, Th. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Jepu, I.; Lungu, C.P. [National Institute for Laser, Plasma and Radiation Physics, EURATOM-MEdC Association, 077125 Bucharest (Romania)

2013-07-15

D implantation into Be-containing mixed material layers: Be, Be–W (W: ∼6 at.%) and Be–C (C: ∼50 at.%), was performed at elevated temperatures. The temperature dependence of D retention varied depending on the admixed element. D retention in Be and Be–W layers decreases with increasing implantation temperature, while the Be–C layers maintained rather high D retention in the present investigated temperature range (up to 623 K). D desorption behaviour from Be–C suggests the contribution of C–D bonds to D retention. W admixture into Be can significantly suppress D retention in Be. Long-term isothermal annealing at 513 and 623 K for D removal was also performed to simulate the ITER-wall-baking scenario. Even extended annealing at temperatures comparable to or lower than the implantation temperature does not lead to a significant release of retained D.

Effect of Anneal temperature and Time on Change of Texture and Hardness of Al-Cu-Mg

International Nuclear Information System (INIS)

Masrukan; Adolf Asih, S.

2000-01-01

Observation of the effect of annealing temperature to its texture and hardness of the Al-Cu-Mg has been done. In this experiments aluminium alloy powder and 5 pieces cubes of this alloy with size of 8 x 8 x 8 mm 3 were used. The powder was not annealed, 2 pieces cube were annealed for 20 hours at temperatures of 200 o C and 300 o respectively, finally 3 pieces cube were annealed at temperature of 400 o C. Texture measurement was done using x-ray diffraction with wave length of 1.78892 A using inverse pole figure method. The hardness testing results at constant temperature of 400 o C and various time indicated that the hardness values are decreased with increasing annealed time. Also, at hardness testing for constant time and various annealing temperatures indicated that the hardness values decreased with increasing annealing temperature

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Liu, R. [SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

Temperature distribution in graphite during annealing in air cooled reactors

International Nuclear Information System (INIS)

Oliveira Avila, C.R. de.

1989-01-01

A model for the evaluation temperature distributions in graphite during annealing operation in graphite. Moderated an-cooled reactors, is presented. One single channel and one dimension for air and graphite were considered. A numerical method based on finite control volumes was used for partioning the mathematical equations. The problem solution involves the use of unsteady equations of mass, momentum and energy conservation for air, and energy conservation for graphite. The source term was considered as stored energy release during annealing for describing energy conservation in the graphite. The coupling of energy conservation equations in air and graphite is performed by the heat transfer term betwen air and graphite. The results agree with experimental data. A sensitivity analysis shown that the termal conductivity of graphite and the maximum inlet channel temperature have great effect on the maximum temperature reached in graphite during the annealing. (author)

Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

Science.gov (United States)

Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

2017-12-01

The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

Effect of annealing temperature on the electrical transport properties of CaRuO3-δ thin films directly deposited on the Si substrate

International Nuclear Information System (INIS)

Paik, Hanjong; Kim, Youngha; No, Kwangsoo; Cann, David P.; Yoon, DongJoo; Kim, ByungIl; Kim, Yangsoo

2007-01-01

We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO 3-δ (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru 4+ /Ca 2+ ion were responsible for the transport properties of CRO thin film. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

International Nuclear Information System (INIS)

Chen, Bin; Tang, Kun; Gu, Shulin; Ye, Jiandong; Huang, Shimin; Gu, Ran; Zhang, Yang; Yao, Zhengrong; Zhu, Shunming; Zheng, Youdou

2014-01-01

Highlights: • To avoid the forming of Co clusters and explore the origin of the magnetism, detailed investigation on the properties of the Co-implanted ZnO films with a rather low dose of 8 × 10 15 cm −2 and high implantation energy of 1 MeV were carried out. • The crystalline structure of the damaged region caused by ion-implantation has been recovered via the thermal annealing treatment at the temperature of 900 °C and above. • The low temperature magnetic hysteresis loops have indicated paramagnetism for the annealed films with weak ferromagnetic characteristics. • The zero-field cooling (ZFC) magnetization curves of the Co-implanted ZnO samples have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C. - Abstract: The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0 0 0 1) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 °C and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co 2+ ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

Science.gov (United States)

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Effect of high temperature annealing on defects and optical properties of ZnO single crystals

International Nuclear Information System (INIS)

Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

2012-01-01

Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

International Nuclear Information System (INIS)

Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

2015-01-01

The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

International Nuclear Information System (INIS)

Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

2006-01-01

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

International Nuclear Information System (INIS)

Zolper, J.C.; Han, J.; Biefeld, R.M.

1997-01-01

The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

International Nuclear Information System (INIS)

Yun, Di; Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M.

2015-01-01

U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

Energy Technology Data Exchange (ETDEWEB)

Yun, Di, E-mail: diyun1979@xjtu.edu.cn [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Xi' an Jiao Tong University, 28 Xian Ning West Road, Xi' an 710049 (China); Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

2015-12-15

U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

Annealing of low-temperature GaAs studied using a variable energy positron beam

International Nuclear Information System (INIS)

Keeble, D.J.; Umlor, M.T.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

1993-01-01

The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 degree C were measured. A gallium vacancy concentration of approximately 3x10 17 cm -3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 degree C. The dominant positron traps in samples annealed at and below 400 degree C are distinct from those acting for samples annealed to 500 or 600 degree C. The change in S parameter for the 600 degree C annealed sample compared to the GaAs substrate, S LT,600 =1.047S sub , is consistent with divacancies or larger open volume defects

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

Science.gov (United States)

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

2008-05-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

2013-12-01

The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

International Nuclear Information System (INIS)

Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

1990-01-01

The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

CdCl{sub 2} activation treatment: A comprehensive study by monitoring the annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Xu, Bing Lei; Rimmaudo, Ivan; Salavei, Andrei [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, Fabio [Department of Biotechnology, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Di Mare, Simone [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Menossi, Daniele; Bosio, Alessio; Romeo, Nicola [Physics and Earth Science Department, University of Parma, V.le G.P. Usberti 7A, 43124 (Italy); Romeo, Alessandro, E-mail: alessandro.romeo@univr.it [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy)

2015-05-01

CdTe thin film solar cells have demonstrated high scalability, high efficiency and low cost fabrication process. One of the key factors for the achievements of this technology is the transformation of the absorber layer by an activation treatment where chlorine reacts with CdTe in a controlled atmosphere or in air, improving the electrical properties of the absorber and enhancing the intermixing of the CdS/CdTe layers. With this work we study the activation process by analyzing the CdCl{sub 2} treatment made by wet deposition with different annealing temperatures from 310 °C up to 410 °C in air keeping the same CdCl{sub 2} concentration in methanol solution. In this way the whole dynamic of the chemical reaction from the minimum activation energy is analyzed. Activated CdTe layers have been analyzed by means of X-ray diffraction and atomic force microscopy. Finished devices with efficiencies from 8% for the low temperature annealing up to more than 14% for the high temperature ones have been thoroughly analyzed by current-voltage, capacitance-voltage and drive-level capacitance profiling techniques. The best performance has been achieved with an annealing temperature of 395 °C. - Highlights: • CdCl{sub 2} treatment with 6 different annealing temperatures has been studied. • The amount and the nature of defects change drastically with temperature. • Jsc is proportional to annealing temperature and to grain size. • Efficiency increases with annealing temperature until a threshold is reached.

Electrically-inactive phosphorus re-distribution during low temperature annealing

Science.gov (United States)

Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

2018-04-01

An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

Effect of Annealing Temperature on Broad Luminescence of Silver-Exchanged Zeolites Y and A

Science.gov (United States)

Gui, Sa Chu Rong; Lin, H.; Bao, W.; Wang, W.

2018-05-01

The annealing temperature dependence of luminescence properties of silver (Ag)-exchanged zeolites Y and A was studied. It was found that the absorbance and excitation/emission bands are strongly affected by the thermal treatments. With increase in annealing temperature, the absorbance of Ag in zeolite Y increases at first and then decreases. However, the position of the excitation/emission band in zeolite Y was found to be insensitive to the annealing temperature. In contrast, the excitation/emission bands in zeolite A are particularly sensitive to the annealing temperature. The difference of such temperature dependence in zeolites Y and A may be due to the different microporous structure of the two minerals. Moreover, the fact that this dependence is not observed in Ag-exchanged zeolite Y is likely to be due to the difficulty in dehydration of zeolite Y in air or due to the weak Ag+-Ag+ interaction in zeolite Y.

Surface Impedance of Copper MOB Depending on the Annealing Temperature and Deformation Degree

International Nuclear Information System (INIS)

Kutovoj, V.A.; Nikolaenko, A.A.; Stoev, P.I.; Vinogradov, D.V.

2006-01-01

Results of researches of influence of annealing temperature and deformation degree on mechanical features of copper MOB are presented. It is shown that minimal surface resistance is observed in copper samples that were subject to pre-deformation and were annealed in the range of temperatures 873...923 K

Radiation annealing mechanisms of low-alloy reactor pressure vessel steels dependent on irradiation temperature and neutron fluence

International Nuclear Information System (INIS)

Pachur, D.

1982-01-01

Heat treatment after irradiation of reactor pressure vessel steels showed annealing of irradiation embrittlement. Depending on the irradiation temperature, the embrittlement started to anneal at about 220 0 C and was completely annealed at 500 0 C with 4 h of annealing time. The annealing behavior was normally measured in terms of the Vickers hardness increase produced by irradiation relative to the initial hardness as a function of the annealing temperature. Annealing results of other mechanical properties correspond to hardness results. During annealing, various recovery mechanisms occur in different temperature ranges. These are characterized by activation energies from 1.5 to 2.1 eV. The individual mechanisms were determined by the different time dependencies at various temperatures. The relative contributions of the mechanisms showed a neutron fluence dependence, with the lower activation energy mechanisms being predominant at low fluence and vice versa. In the temperature range where partial annealing of a mechanism took place during irradiation, an increase in activation energy was observed. Trend curves for the increase in transition temperature with irradiation, for the relative increase of Vickers hardness and yield strength, and for the relative decrease of Charpy-V upper shelf energy are interpreted by the behavior of different mechanisms

Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

Institute of Scientific and Technical Information of China (English)

ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

2012-01-01

Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ～0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

Effect of annealing temperature on the crystalline quality and phase transformation of chemically deposited CdSe films

International Nuclear Information System (INIS)

Zapata-Torres, M.; Chale-Lara, F.; Caballero-Briones, F.; Calzadilla, O.

2005-01-01

Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50 C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60 C and 300 C. For annealing temperatures higher than 300 C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300 C and 500 C with 50 intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300 C. For temperatures between 300 C and 450 C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500 C we obtain only the hexagonal phase. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

Science.gov (United States)

Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

2018-05-01

ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

Physical properties of Fe doped In_2O_3 magnetic semiconductor annealed in hydrogen at different temperature

International Nuclear Information System (INIS)

Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Chen, S.K.; Lim, K.P.; Kechik, M.M. Awang

2016-01-01

The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In_2_−_xFe_xO_3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In_2O_3 phase structure when annealed in hydrogen at 300–500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In_2O_3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×10"1"9 cm"−"3, while film annealed at 500 °C has both good electrical (ρ=0.05 Ω.cm and n=2.2×10"1"9 cm"−"3) and magnetic properties, Ms=21 emu/cm"-"3. - Highlights: • Physical properties of films were sensitive to hydrogen-annealing temperature. • Magnetisation, Ms, of films increased with increase of hydrogen annealing temperature. • Film annealed in hydrogen at 300 °C has the lowest resistivity, ρ=0.03 Ω cm. • Film annealed in hydrogen at 600 °C has highest magnetisation, Ms=30 emu/cm"3.

Interference effect on annealing temperature of A and E centers in silicon.

Science.gov (United States)

Fang, P. H.; Tanaka, T.

1971-01-01

The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

Science.gov (United States)

Bell, Robert T; Jacobs, Alan G; Sorg, Victoria C; Jung, Byungki; Hill, Megan O; Treml, Benjamin E; Thompson, Michael O

2016-09-12

A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

Science.gov (United States)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1992-05-01

High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

Room-temperature annealing of Si implantation damage in InP

International Nuclear Information System (INIS)

Akano, U.G.; Mitchell, I.V.

1991-01-01

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

Science.gov (United States)

Hu, Sheng-qing; Peng, Kun; Chen, Hong

2017-03-01

Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10-8 cm2 s-1 and 2.4×10-7 cm2 s-1, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions.

Enhanced adhesion between carbon nanotubes and substrate surfaces by low-temperature annealing

International Nuclear Information System (INIS)

Jang, Chi Woong; Byun, Young Tae; Woo, Deok Ha; Lee, Seok; Jhon, Young Min

2012-01-01

We enhanced the adhesion forces between carbon nanotubes (CNTs) and the substrate surface by using a low-temperature annealing process at 180 .deg. C for 300 s to protect the CNTs throughout the processes in photolithography for fabricating CNT-based devices, especially ion and bio sensors which are always exposed to liquids. The adhesion force was tested by using the adhesion durability test of soaking the fabricated CNT field effect transistors (CNT-FETs) in de-ionized water at room temperature for 300 s, and the adsorption quantities of CNTs were analyzed by using I - V measurements on the CNT-FETs before and after each adhesion durability test. The conductance change of the CNT-FETs fabricated with the annealing process was considerably decreased by more than a factor of 10 5 compared to that without the annealing process, implying that CNTs adhere much more strongly to the substrate after the annealing process.

Cyclic deformation behavior and microstructural changes of 12Cr-WMoV martensitic stainless steel at elevated temperature

International Nuclear Information System (INIS)

Song, X.L.; Yang, G.X.; Zhou, S.L.; Fan, H.; Yang, S.S.; Zhu, J.W.; Liu, Y.N.

2008-01-01

Strain-controlled uniaxial push-pull low-cycle fatigue tests were performed on 12Cr-WMoV martensitic stainless steel at room temperature and 600 deg. C. Specimens were tested at total strain amplitudes of 1.5% and 0.8% with a constant strain rate of 0.004 s -1 . The microstructures of the specimens subjected to different cycles were studied using transmission electron microscopy (TEM). Cyclic softening was observed at room temperature and 600 deg. C. TEM investigations revealed that cellular structures of dislocations were formed in the fatigued specimens at both room and elevated temperatures. Dynamic recovery has a very significant effect on the dislocation structure of specimens tested at elevated temperature. The thickness and density of the dislocation cell walls formed in specimens cycled at 600 deg. C are less than that at room temperature. Cellular dislocation structures formed during cycling are annihilated in the specimens subjected to 1 h annealing at 600 deg. C

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

2016-03-31

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

In vitro behavior of MC3T3-E1 preosteoblast with different annealing temperature titania nanotubes.

Science.gov (United States)

Yu, W Q; Zhang, Y L; Jiang, X Q; Zhang, F Q

2010-10-01

Titanium oxide nanotube layers by anodization have excellent potential for dental implants because of good bone cell promotion. It is necessary to evaluate osteoblast behavior on different annealing temperature titania nanotubes for actual implant designs.  Scanning Electron Microscopy, X-Ray polycrystalline Diffractometer (XRD), X-ray photoelectron Spectroscope, and Atomic Force Microscopy (AFM) were used to characterize the different annealing temperature titania nanotubes. Confocal laser scanning microscopy, MTT, and Alizarin Red-S staining were used to evaluate the MC3T3-E1 preosteoblast behavior on different annealing temperature nanotubes.  The tubular morphology was constant when annealed at 450°C and 550°C, but collapsed when annealed at 650°C. XRD exhibited the crystal form of nanotubes after formation (amorphous), after annealing at 450°C (anatase), and after annealing at 550°C (anatase/rutile). Annealing led to the complete loss of fluorine on nanotubes at 550°C. Average surface roughness of different annealing temperature nanotubes showed no difference by AFM analysis. The proliferation and mineralization of preostoblasts cultured on anatase or anatase/rutile nanotube layers were shown to be significantly higher than smooth, amorphous nanotube layers.  Annealing can change the crystal form and composition of nanotubes. The nanotubes after annealing can promote osteoblast proliferation and mineralization in vitro. © 2010 John Wiley & Sons A/S.

Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

Science.gov (United States)

Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

2012-12-01

Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

Science.gov (United States)

Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

2013-02-01

This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

Cesium lead iodide solar cells controlled by annealing temperature.

Science.gov (United States)

Kim, Yu Geun; Kim, Tae-Yoon; Oh, Jeong Hyeon; Choi, Kyoung Soon; Kim, Youn-Jea; Kim, Soo Young

2017-02-22

An inorganic lead halide perovskite film, CsPbI 3 , used as an absorber in perovskite solar cells (PSCs) was optimized by controlling the annealing temperature and the layer thickness. The CsPbI 3 layer was synthesized by one-step coating of CsI mixed with PbI 2 and a HI additive in N,N-dimethylformamide. The annealing temperature of the CsPbI 3 film was varied from 80 to 120 °C for different durations and the thickness was controlled by changing the spin-coating rpm. After annealing the CsPbI 3 layer at 100 °C under dark conditions for 10 min, a black phase of CsPbI 3 was formed and the band gap was 1.69 eV. Most of the yellow spots disappeared, the surface coverage was almost 100%, and the rms roughness was minimized to 3.03 nm after annealing at 100 °C. The power conversion efficiency (PCE) of the CsPbI 3 based PSC annealed at 100 °C was 4.88%. This high PCE value is attributed to the low yellow phase ratio, high surface coverage, low rms roughness, lower charge transport resistance, and lower charge accumulation. The loss ratio of the PCE of the CH 3 NH 3 PbI x Cl 3-x and CsPbI 3 based PSCs after keeping in air was 47 and 26%, respectively, indicating that the stability of the CsPbI 3 based PSC is better than that of the CH 3 NH 3 PbI x Cl 3-x based PSC. From these results, it is evident that CsPbI 3 is a potential candidate for solar cell applications.

The influence of annealing temperature on the strength of TRISO coated particles

International Nuclear Information System (INIS)

Rooyen, I.J. van; Neethling, J.H.; Rooyen, P.M. van

2010-01-01

The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 o C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 o C.

Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

Energy Technology Data Exchange (ETDEWEB)

Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

2014-07-01

Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

Science.gov (United States)

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-04-27

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

International Nuclear Information System (INIS)

Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

2017-01-01

Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

The origin of the coercivity reduction of Nd–Fe–B sintered magnet annealed below an optimal temperature

International Nuclear Information System (INIS)

Akiya, T.; Sasaki, T.T.; Ohkubo, T.; Une, Y.; Sagawa, M.; Kato, H.; Hono, K.

2013-01-01

In order to understand the origin of the coercivity reduction in a sintered Nd–Fe–B magnet that is annealed below an optimal annealing temperature, we performed focused ion beam/scanning electron microscopy tomography of post-sinter annealed magnets. A number of grain boundary cracks were observed between Nd 2 Fe 14 B grains and Nd-rich phases in the sample annealed below the optimal temperature. We deduced micromagnetic parameters α and N eff by fitting the temperature dependence of the coercivity. While α was constant regardless of the annealing conditions, N eff increased in the sample annealed below the optimal temperature with the reduced coercivity. This indicates that the reduction of the coercivity is due to the local stray field at the cracks. - Highlights: • We performed FIB/SEM tomography of post-sinter annealed magnets. • A number of grain boundary cracks were observed in the low-coercivity sample. • Parameters α and N eff were deduced from the temperature dependence of coercivity. • While α was constant, N eff increased in the low-coercivity sample. • The reduction of the coercivity is due to the local stray field at the cracks

Preparation of (Bi, Pb)-2223/Ag tapes by high temperature sintering and post-annealing process

DEFF Research Database (Denmark)

Hua, L.; Grivel, Jean-Claude; Andersen, L.G.

2002-01-01

A novel heat treatment process was developed to fabricate (Bi, Pb)-2223/Ag tapes with high critical current density (J(c)). The process can be divided into two parts: reformation and post-annealing. Tapes were first heated to the maximum temperature (830-860 degreesC) followed by slow cooling...... (reformation). Then, tape, were annealed between 760 and 820 degreesC (post-annealing). Reformation is expected to produce a large amount of liquid phase which may heat microcracks, decrease porosity, and improve grain growth. However, since the sintering temperature is beyond the Bi-2223 single-phase region......-energy synchrotron XRD and SEM/EDX. Some process parameters e.g. sintering temperature. cooling rate. and post-annealing time were optimised. (C) 2002 Elsevier Science B.V. All rights reserved....

Annealing temperatures influence luminescence of YBO{sub 3}: Ce{sup 3+}, Yb{sup 3+} prepared by solvothermal method

Energy Technology Data Exchange (ETDEWEB)

Wang, Yue [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Hu, Xiaoyun, E-mail: hxy3275@nwu.edu.cn [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Zhan, Suchang; Sun, Xiao; Wang, Zhizhong; Miao, Tian; Miao, Hui [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Fan, Jun [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China)

2014-08-01

Near-infrared (NIR) quantum cutting (QC) YBO{sub 3}: Ce{sup 3+}, Yb{sup 3+} phosphors have been synthesized by solvothermal method with further heat treatment. The emission spectrum shows the Vis and NIR emission intensity of samples are both increasingly strong as annealing temperature rises when the annealing temperature is above 600 °C. Meanwhile the Vis emission of unannealed sample is observed. SEM images show that the sample annealed at different temperatures (200–900 °C) is mainly composed of nanosheets like potato chips, which is melt down granules after annealing treatment above 1000 °C.The crystal texture of all samples whether annealed or not is hexagonal through the analysis of XRD. The Raman and infrared spectrums indicate that the boron ions exist of BO{sub 4} units when the annealing temperature is above 600 °C. The infrared profile of unannealed sample shows that there are N–H units in the samples without annealing treatment. - Highlights: • The nanosheets like potato chips are synthesized by solvothermal method. • Annealing temperature is a great effect for luminescence of sample. • The boron ions exist of BO{sub 4} when the annealing temperature is above 600 °C, whose quantity determines the luminescent intensity. • According to the infrared profile of unannealed sample, there are N–H units, which are beneficial to the Vis emission.

Nitrogen aggregation in Ib type synthetic diamonds at low pressure and high-temperature annealing

International Nuclear Information System (INIS)

Kazyuchits, N.M.; Rusetskij, M.S.; Latushko, Ya.I.; Kazyuchits, V.N.; Zajtsev, A.M.

2015-01-01

A new technique for annealing of diamonds at low pressure and high temperature (LPHT) is considered. The absorption spectra of synthetic Ib diamonds are given before and after annealing. This is evident from a comparison of the spectra that nitrogen aggregation process takes place at the LPHT annealing diamond. (authors)

Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

International Nuclear Information System (INIS)

Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

2014-01-01

Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

2014-04-15

In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

Energy Technology Data Exchange (ETDEWEB)

Hu, Sheng-qing, E-mail: joy_hsq@126.com [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Peng, Kun, E-mail: kpeng@hnu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Chen, Hong [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

2017-03-15

Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10{sup −8} cm{sup 2} s{sup −1} and 2.4×10{sup −7} cm{sup 2} s{sup −1}, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions. - Highlights: • The optimum annealing conditions can be determined as 900 °C for 8 h. • The diffusion coefficient of Dy at 900 °Care determined to be 2.4×10{sup −7} cm{sup 2} s{sup −1}. • A maximum diffusion length of about 3 mm can be obtained.

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

Science.gov (United States)

Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

2017-09-20

Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

International Nuclear Information System (INIS)

Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

2007-01-01

The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

The influence of annealing temperature on the strength of TRISO coated particles

Energy Technology Data Exchange (ETDEWEB)

Rooyen, I.J. van, E-mail: Isabel.vanrooyen@pbmr.co.z [Pebble Bed Modular Reactor (Pty) Ltd., 1279 Mike Crawford Avenue, Centurion (South Africa); Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Rooyen, P.M. van [Pebble Bed Modular Reactor (Pty) Ltd., 1279 Mike Crawford Avenue, Centurion (South Africa)

2010-07-31

The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 {sup o}C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 {sup o}C.

Formation of Medium Carbon TRIP Steel Microstructure During Annealing in the Intercritical Temperature Range

Directory of Open Access Journals (Sweden)

Kokosza A.

2014-10-01

Full Text Available The paper presents the results of research conducted on austenite formation in the microstructure of 41MnSi6-5 TRIP steel during annealing in the intercritical temperature range. The influence of the annealing temperature on the volume fraction of retained austenite in the microstructure of the investigated steel after water quenching was also determined.

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

Science.gov (United States)

Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

1987-01-01

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

Energy Technology Data Exchange (ETDEWEB)

Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

International Nuclear Information System (INIS)

Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2016-01-01

Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

The microstructure and surface hardness of Ti6Al4V alloy implanted with nitrogen ions at an elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Vlcak, Petr, E-mail: petr.vlcak@fs.cvut.cz [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Cerny, Frantisek [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Drahokoupil, Jan [Department of Metals, Institute of Physics, AS CR, v.v.i., Na Slovance 2, 182 21 Prague (Czech Republic); Sepitka, Josef [Department of Mechanics, Biomechanics and Mechatronics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Tolde, Zdenek [Department of Materials Engineering, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic)

2015-01-25

Highlights: • The Ti6Al4V samples were implanted with 90 keV nitrogen ions. • The samples were annealed at 500 °C during the ion implantation process. • An elevated temperature increases the mobility of the atoms and the quantity of TiN. • The hardness showed a significant increase compared to room temperature implantation. - Abstract: The effect of an elevated temperature during nitrogen ion implantation on the microstructure and on the surface hardness of Ti6Al4V titanium alloy was examined. The implantation process was carried out at fluences of 1 ⋅ 10{sup 17}, 2.7 ⋅ 10{sup 17} and 6 ⋅ 10{sup 17} cm{sup −2} and at ion energy 90 keV. The implanted samples were annealed at 500 °C during the implantation process. X-ray diffraction analysis was performed to obtain a phase characterization and a phase quantification in the implanted sample surface. The surface hardness was investigated by nanoindentation testing, and the nitrogen depth distribution was measured by Rutherford Backscattering Spectroscopy. Elevated temperature led to increased formation of a TiN compound. It was found that a mixture of TiN and an α-Ti(+N) solid solution had a predominant amount of TiN for samples with fluence of 2.7 ⋅ 10{sup 17} cm{sup −2} or higher. Elevated temperature during ion implantation caused an increase in surface hardening more towards the depth of the substrate in comparison with room temperature implantation. The hardness showed a remarkably significant increase at a fluence of 1 ⋅ 10{sup 17} and 2.7 ⋅ 10{sup 17} cm{sup −2} compared to samples implanted at the same fluences and at room temperature. There is a discussion of such mechanisms that explain the observed hardening more towards the depth of the substrate, and the increase in hardness.

CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

Science.gov (United States)

Soylu, M.; Yazici, T.

2017-12-01

Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

Tailoring the magnetic properties and magnetorheological behavior of spinel nanocrystalline cobalt ferrite by varying annealing temperature.

Science.gov (United States)

Sedlacik, Michal; Pavlinek, Vladimir; Peer, Petra; Filip, Petr

2014-05-14

Magnetic nanoparticles of spinel nanocrystalline cobalt ferrite were synthesized via the sol-gel method and subsequent annealing. The influence of the annealing temperature on the structure, magnetic properties, and magnetorheological effect was investigated. The finite crystallite size of the particles, determined by X-ray diffraction and the particle size observed via transmission electron microscopy, increased with the annealing temperature. The magnetic properties observed via a vibrating sample magnetometer showed that an increase in the annealing temperature leads to the increase in the magnetization saturation and, in contrast, a decrease in the coercivity. The effect of annealing on the magnetic properties of ferrite particles has been explained by the recrystallization process at high temperatures. This resulted in grain size growth and a decrease in an imposed stress relating to defects in the crystal lattice structure of the nanoparticles. The magnetorheological characteristics of suspensions of ferrite particles in silicone oil were measured using a rotational rheometer equipped with a magnetic field generator in both steady shear and small-strain oscillatory regimes. The magnetorheological performance expressed as a relative increase in the magnetoviscosity appeared to be significantly higher for suspensions of particles annealed at 1000 °C.

Effect of annealing temperature on the tribological behavior of ZnO films prepared by sol-gel method

International Nuclear Information System (INIS)

Lin Liyu; Kim, Dae-Eun

2009-01-01

The tribological behavior of zinc oxide (ZnO) films grown on glass and silicon (100) substrates by sol-gel method was investigated. Particularly, the as-coated films were post-annealed at different temperatures in air to investigate the effect of annealing temperature. Crystal structural and surface morphology of the films were measured by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). XRD patterns and AFM images indicated that the crystallinity and grain size of the films were enhanced and increased, respectively, with temperature. The tribological behavior of films was evaluated by sliding the ZnO films against a Si 3 N 4 ball under 0.5 gf normal load using a reciprocating pin-on-plate tribo-tester. The wear tracks of the films were measured by AFM to quantify the wear resistance of the films. The results showed that the wear resistance of the films could be improved by the annealing process. The wear resistance of the films generally increased with annealing temperature. Specifically, the wear resistance of the films was significantly improved when the annealing temperature was higher than 550 deg. C. The increase in the wear resistance is attributed to the increase in hardness and modulus of the film with annealing temperature

Effect of annealing temperature and dopant concentration on the thermoluminescence sensitivity in LiF:Mg,Cu,Ag material.

Science.gov (United States)

Yahyaabadi, Akram; Torkzadeh, Falamarz; Rezaei Ochbelagh, Dariush; Hosseini Pooya, Seyed Mahdi

2018-04-24

LiF:Mg,Cu,Ag is a new dosimetry material that is similar to LiF:Mg,Cu,P in terms of dosimetric properties. The effect of the annealing temperature in the range of 200 to 350°C on the thermoluminescence (TL) sensitivity and the glow curve structure of this material at different concentrations of silver (Ag) was investigated. It has been demonstrated that the optimum values of the annealing temperature and the Ag concentration are 240°C and 0.1 mol% for better sensitivity, respectively. The TL intensity decreases at annealing temperatures lower than 240°C or higher than 240°C, reaching a minimum at 300°C and then again increases for various Ag concentrations. It was observed that the glow curve structure altered and the area under the low temperature peak as well as the area under the main dosimetric peak decreased with increasing annealing temperature. The position of the main dosimetric peak moved in the direction of higher temperatures, but at 320 and 350°C annealing temperatures, it shifted to lower temperatures. It was also observed that the TL sensitivity could partially be recovered by a combined annealing procedure. Copyright © 2018 John Wiley & Sons, Ltd.

The effects of pre-dose and annealing temperature on some dosimetric properties of thermoluminescence of quartz

International Nuclear Information System (INIS)

Lin Zhikai

1996-02-01

The following aspects of dosimetric properties of quartz sample were studied. (1) The changes in dosimetric sensitivity of quartz with different pre-doses under different annealing temperature; (2) the option of optimal annealing temperature which can make the dosimetric sensitivity of quartz to restore its original level; (3) The changes in dosimetric sensitivity of quartz with different annealing time at 500 degree C for 8 h; (4) Repeated experiments were carried out in order to prove whether the sensitivity of quartz can restore its original level at annealing temperature 700 degree C for 3 h. It has been found that at 700 degree C for 3 h gave the least sensitivity change and the sensitivity of quartz almost restored its original level. Repeated experiments with four kinds of quartz sample confirmed this conclusion. The dramatic change of TL glow curve occurred only at the condition of annealing temperature 900 degree C for 1 h. This result was different from that obtained by D. J. Huntley et al. (1988). (3 refs., 4 figs., 1 tab.)

Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

International Nuclear Information System (INIS)

Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

2006-01-01

We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

Science.gov (United States)

Krasikov, E.

2015-04-01

As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible.

Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

International Nuclear Information System (INIS)

Krasikov, E

2015-01-01

As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation.There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment.The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. (paper)

Effect of annealing temperature on the stress and structural properties of Ge core fibre

Science.gov (United States)

Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

2017-09-01

Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

Fabrication of wire and flat strips with elevated recrystallization temperature of Mo monocrystals

International Nuclear Information System (INIS)

Mikhajlov, S.M.; Nesgovorov, V.V.; Kabakova, L.G.; Korzukhin, V.E.; Savitskij, E.M.; Burkhanov, G.S.; Ottenberg, E.V.

1977-01-01

A technique is developed for manufacturing wire and flat strip of elevated recrystallization point from single crystals fo molybdenum with micro-additions of zirconium and titanium by rotary hot forging with subsequent drawing under hydrodynamic friction conditions. Flat strip is manufactured next from a wire annealed at 1300-1400 deg C in hydrogen. Resultant wire and flat strip feature a high recrystallization point and a good shape stability. Tests on their ultimate strength on the range of temperatures between 20 and 1700 deg C have shown that the maximum temperature of the recrystallization onset is that of a wire from Mo single crystals of orientation [110], containing micro-additions of Zr and Ti, whereas loss of strength is at its highest in a wire from non-alloyed single-crystal molybdenum

Elevated temperature effects on concrete properties

International Nuclear Information System (INIS)

Grant, P.R.; Gruber, R.S.; Van Katwijk, C.

1993-08-01

The design of facilities to process or store radioactive wastes presents many challenging engineering problems. Such facilities must not only provide for safe storage of radioactive wastes but they must also be able to maintain confinement of these materials during and after natural phenomena events. Heat generated by the radioactive decay of the wastes will cause the temperature of the concrete containment structure to increase to a magnitude higher than that found in conventional structures. These elevated temperatures will cause strength-related concrete properties to degrade over time. For concrete temperatures less than 150 degree F, no reduction in strength is taken and the provisions of ACI 349, which states that higher temperatures are allowed if tests are provided to evaluate the reduction in concrete strength properties, apply. Methods proposed in a Pacific Northwest Laboratory (PNL) report, Modeling of Time-Variant Concrete Properties at Elevated Temperatures, can be used to evaluate the effects of elevated temperatures on concrete properties. Using these modified concrete properties the capacity of a concrete structure, subjected to elevated temperatures, to resist natural phenomena hazards can be determined

Effects of annealing on the recombination dynamics of low-temperature grown ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Hilker, B.; Bekeny, C.; Voss, T.; Gutowski, J. [IFP, Universitaet Bremen, 28334 Bremen (Germany); Hauschild, R.; Kalt, H. [Universitaet Karlsruhe, 76128 Karlsruhe (Germany); Postels, B.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, 38023 Braunschweig (Germany)

2007-07-01

We present systematic temperature and excitation density dependent time-resolved photoluminescence (TRPL) measurements of as-grown and annealed ZnO nanorods fabricated by an aqueous chemical growth (ACG) technique at {proportional_to}90 C. The as-grown nanorods show strong nearband-edge and rather weak deep-level emission indicating their already good optical quality. At 4K, we find a broad emission line at 3.36 eV (line width 30 meV) which we attribute to recombination from a donor band formed through the high donor concentration. After annealing in oxygen and nitrogen atmospheres at 600-800 C well-resolved and sharper excitonic transitions are observed. To understand the recombination dynamics in the nanorods we carried out TRPL measurements using a frequency-doubled femtosecond laser and a streak camera. The as-grown sample shows a very fast monoexponential decay time of {proportional_to}10ps independent of temperature and excitation density. In contrast, the annealed samples exhibit a biexponential decay. Each a fast {tau}1 and a slow {tau}2 time constant have been determined for all annealed samples both of them significantly varying depending on the annealing atmosphere and temperature. This will be discussed on the basis of a phenomenological rate-equation model.

Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

International Nuclear Information System (INIS)

Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

2013-01-01

Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

Science.gov (United States)

Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

2018-05-01

This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

Science.gov (United States)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Post-deposition annealing temperature dependence TiO_2-based EGFET pH sensor sensitivity

International Nuclear Information System (INIS)

Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

2016-01-01

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO_2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO_2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO_2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Science.gov (United States)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

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Chong-Chong Dai

2014-04-01

Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

The effects of Mg incorporation and annealing temperature on the ...

Indian Academy of Sciences (India)

Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 2. The effects of Mg incorporation and annealing temperature on the physicochemical properties and antibacterial activity against {\\it Listeria monocytogenes} of ZnO nanoparticles. NIMA SHADAN ALI ABDOLAHZADEH ZIABARI RAFIEH MERAAT KAMYAR ...

Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1998-02-01

Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

Effect of Annealing Temperature on Gas Sensing Performance of SnO2 Thin Films Prepared by Spray Pyrolysis

Directory of Open Access Journals (Sweden)

G. E. PATIL

2010-12-01

Full Text Available The effect of variation of annealing temperature on the gas sensing characteristics of SnO2 thin films, which have been prepared by spray pyrolysis on alumina substrate at 350 oC, is investigated systematically for various gases at different operating temperature. The XRD, UV-visible spectroscopy and SEM techniques were employed to establish the structural, optical and morphological characteristics of the materials, resp. The X-ray diffraction results showed an increase in the crystallinity at higher annealing temperature. A high value of sensitivity is obtained for H2S gas at an optimum temperature of 100 oC is improved considerably. A SnO2 gas sensor annealed at 950 oC with sensitivity as high as 24 %, 4 times higher than that of sensor annealed at 550oC, are obtained for 80 ppm of H2S. The degree of crystallinity and grain size calculated from the XRD patterns has been found increasing with annealing temp

Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

Science.gov (United States)

Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

2018-06-01

In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

Annealing Behavior of Al-Implantation-Induced Disorder in 4H-SiC

International Nuclear Information System (INIS)

Zhang, Yanwen; Weber, William J.; Jiang, Weilin; Shutthanandan, V.; Thevuthasan, Suntharampillai; Janson, Martin; Hallen, Anders

2004-01-01

Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al 2 2+ and subsequently annealed at elevated temperatures. Rutherford backscattering spectrometry (RBS) results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy (SIMS) is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that each implanted Al stabilizes or inhibits recovery for an equivalent of a few hundred Si interstitials under the current experimental conditions

Strong white photoluminescence from annealed zeolites

International Nuclear Information System (INIS)

Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

2014-01-01

The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

Synthesis of borides in molybdenum implanted by B+ ions under thermal and electron annealing

International Nuclear Information System (INIS)

Kazdaev, Kh.R.; Akchulakov, M.T.; Bayadilov, E.M.; Ehngel'ko, V.I.; Lazarenko, A.V.; Chebukov, E.S.

1989-01-01

The possibility of formation of borides in the near surface layers of monocrystalline molybdenum implanted by boron ions at 35 keV energy under thermal and pulsed electron annealing by an electon beam at 140 keV energy is investigated. It is found that implantation of boron ions into molybdenum with subsequent thermal annealing permits to produce both molybdenum monoboride (α-MoB) and boride (γ-Mo 2 B) with rather different formation mechanisms. Formation of the α-MoB phase occurs with the temperature elevation from the centers appeared during implantation, while the γ-Mo 2 B phase appears only on heating the implanted layers up to definite temperature as a result of the phase transformation of the solid solution into a chemical compound. Pulsed electron annealing instead of thermal annealing results mainly in formation of molybdenum boride (γ-Mo 2 B), the state of structure is determined by the degree of heating of implanted layers and their durable stay at temperatures exceeding the threshold values

Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

International Nuclear Information System (INIS)

Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

1988-01-01

A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Science.gov (United States)

Vandersande, Jan W.; Wood, Charles; Draper, Susan

1987-01-01

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

The annealing of phosphorus-implanted silicon investigated at low temperatures

International Nuclear Information System (INIS)

Wagner, C.; Burkhardt, F.

1978-01-01

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

Vessels for elevated temperature service

International Nuclear Information System (INIS)

O'Donnell, W.J.; Porowski, J.S.

1983-01-01

The subject is covered in chapters, entitled: introduction (background; elevated temperature concerns; design tools); design of pressure vessels for elevated temperature per ASME code; basic elevated temperature failure modes; allowable stresses and strains per ASME code (basic allowable stress limits; ASME code limits for bending; time-fraction summations; strain limits; buckling and instability; negligible creep and stress-rupture effects); combined membrane and bending stresses in creep regime; thermal stress cycles; bounding methods based on elastic core concept (bounds on accumulated strains; more accurate bounds; strain ranges; maximum stresses; strains at discontinuities); elastic follow-up; creep strain concentrations; time-dependent fatigue (combined creep rupture and fatigue damage; limits for inelastic design analyses; limits for elastic design analyses); flaw evaluation techniques; type 316 stainless steel; type 304 stainless steel; steel 2 1/4Cr1Mo; Inconel 718; Incolloy 800; Hastelloy X; detailed inelastic design analyses. (U.K.)

Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

Science.gov (United States)

Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

2018-04-01

We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

Science.gov (United States)

Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

2018-03-01

High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

High temperature annealing of fission tracks in fluorapatite, Santa Fe Springs oil field, Los Angeles Basin, California

Science.gov (United States)

Naeser, Nancy D.; Crowley, Kevin D.; McCulloh, Thane H.; Reaves, Chris M.; ,

1990-01-01

Annealing of fission tracks is a kinetic process dependent primarily on temperature and to a laser extent on time. Several kinetic models of apatite annealing have been proposed. The predictive capabilities of these models for long-term geologic annealing have been limited to qualitative or semiquantitative at best, because of uncertainties associated with (1) the extrapolation of laboratory observations to geologic conditions, (2) the thermal histories of field samples, and (3) to some extent, the effect of apatite composition on reported annealing temperatures. Thermal history in the Santa Fe Springs oil field, Los Angeles Basin, California, is constrained by an exceptionally well known burial history and present-day temperature gradient. Sediment burial histories are continuous and tightly constrained from about 9 Ma to present, with an important tie at 3.4 Ma. No surface erosion and virtually no uplift were recorded during or since deposition of these sediments, so the burial history is simple and uniquely defined. Temperature gradient (???40??C km-1) is well established from oil-field operations. Fission-track data from the Santa Fe Springs area should thus provide one critical field test of kinetic annealing models for apatite. Fission-track analysis has been performed on apatites from sandstones of Pliocene to Miocene age from a deep drill hole at Santa Fe Springs. Apatite composition, determined by electron microprobe, is fluorapatite [average composition (F1.78Cl0.01OH0.21)] with very low chlorine content [less than Durango apatite; sample means range from 0.0 to 0.04 Cl atoms, calculated on the basis of 26(O, F, Cl, OH)], suggesting that the apatite is not unusually resistant to annealing. Fission tracks are preserved in these apatites at exceptionally high present-day temperatures. Track loss is not complete until temperatures reach the extreme of 167-178??C (at 3795-4090 m depth). The temperature-time annealing relationships indicated by the new data

Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

2012-08-31

Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

Energy Technology Data Exchange (ETDEWEB)

Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com [NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my [Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Herman, S. H., E-mail: hana1617@salam.uitm.edu.my [Core of Frontier Materials & Industry Applications, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Hyunpil Boo

2012-01-01

Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

Impact of Annealing Temperature on the Physical Properties of the Lanthanum Deficiency Manganites

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Skini Ridha

2017-10-01

Full Text Available The lanthanum deficiency manganites La0.8-x□xCa0.2MnO3 (x = 0, 0.1 and 0.2, where □ is a lanthanum vacancy, were prepared using the classic ceramic methods with different thermal treatments (1373 K and 973 K. The structural, magnetic, and magnetocaloric properties of these compounds were studied as a function of annealing temperature. It was noted that the annealing temperature did not affect the crystal structure of our samples (orthorhombic structure with Pnma space group. Nevertheless, a change in the variation of the unit cell volume V, the average bond length dMn–O, and the average bond angles θMn–O–Mn were observed. Magnetization versus temperature study has shown that all samples exhibited a magnetic transition from ferromagnetic (FM to paramagnetic (PM phase with increasing temperature. However, it can be clearly seen that the annealing at 973 K induced an increase of the magnetization. In addition, the magnetocaloric effect (MCE as well as the relative cooling power (RCP were estimated. As an important result, the values of MCE and RCP in our Lanthanum-deficiency manganites are reported to be near to those found in gadolinium, considered as magnetocaloric reference material.

Effect of oxidation and annealing temperature on optical and ...

Indian Academy of Sciences (India)

Administrator

Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

Temperature dependence of radiation colloidal centers production and annealing in alkali halide crystals

International Nuclear Information System (INIS)

Kristapson, J.Z.; Ozerskii, V.J.

1981-01-01

The investigation results on temperature dependences of production and annealing of radiation colloidal color centers have been reviewed. In order to produce such centers in NaCl, KCl and KBr crystals the doses of 10 2 -10 4 Mrad as well as irradiation temperatures of 300-600 K and post-irradiation heating of up to 800 K were applied. It has been demonstrated that to produce X-centers, it is necessary to have optimal temperature and initial critical dose during both irradiation and post-irradiation heating of crystals. It has been also found that during annealing hole centers produced are different with regard to thermal stability. The possible recombination mechanisms of hole and electron products of radiolysis during post-irradiation heating has been analyzed [ru

454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature.

Science.gov (United States)

Gonzalez-Martinez, Alejandro; Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C M; Osorio, F; Gonzalez-Lopez, Jesus

2015-01-01

Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44-49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

Reduction in L10 phase transition temperature of PLD grown FePt thin by pre-annealing pulse laser exposure

International Nuclear Information System (INIS)

Wang, Y.; Rawat, R.S.; Bisht, A.

2013-01-01

A pre-annealing atmospheric pulsed laser exposure was applied to decrease the phase transition (from chemically disordered A1 phase to chemically ordered L1 0 phase) temperature of FePt nano-particles on a Si (100) substrate. Different pre-annealing laser energy densities of 0.024 and 0.079 J/cm2 were utilized to expose the pulsed laser deposition (PLD) FePt thin film samples under atmospheric conditions. Subsequently, FePt thin film samples were annealed at different temperatures of 300 and 400 ºC to observe the influence of laser exposure on the phase transition temperature. The phase transition temperature was decreased from conventional 600 ºC to 400 ºC by one shot pre-annealing atmospheric pulsed laser exposure. (author)

Role of Annealing Temperature on Morphology of Alumina Thin Film Prepared by Wet-Chemical Method

Directory of Open Access Journals (Sweden)

Manju Pandey

2015-03-01

Full Text Available In this paper, we reported the compositional, morphological and structural properties of the alumina(Al2O3 thin films prepared by sol-gel technique and annealed between 800 0C to 1200 0C for 1-hour in an air atmosphere. The deposited films were polycrystalline in nature. Thin films were found uniform and adherent to the alumina substrate. Effect of annealing temperature on structural parameters such as pore size and surface area were calculated. The result indicates that pore size and surface area was decreased by increasing annealing temperature. The material characterization was done by field emission scanning electron microscope (SEM, atomic force microscopy (AFM and Brunaur, Emmet and Teller (BET.

Texture development in Al-Mg alloys during high temperature annealing

International Nuclear Information System (INIS)

Saitou, T.; Inagaki, H.

2001-01-01

To clarify the effect of Mg content on annealing textures developed in Al-Mg alloys during high temperature annealing, Al-Mg alloys containing up to 9 wt.% Mg in supersaturated solid solution were cold rolled 95% and isothermally annealed at 450 C. Their textures were investigated with the orientation distribution function analysis. It was found that, in the recrystallization textures observed at complete recrystallization, addition of more than 1 wt.% Mg was sufficient to suppress the development of {100} left angle 001 right angle. With increasing Mg content, {100} left angle 001 right angle decreased remarkably, whereas {100} left angle 013 right angle and {103} left angle 321 right angle increased. Thus, {100} left angle 013 right angle and {103} left angle 321 right angle were found to be the main orientations of the recrystallization textures of Al-Mg alloys annealed at high temperatures. {100} left angle 013 right angle developed most remarkably at 4 wt.% Mg, while {103} left angle 321 right angle showed the maximum development at 7 wt.% Mg. During subsequent grain growth at 450 C, remarkable texture changes were observed only in the alloys containing Mg in the range between 2 and 4 wt.%. In these alloys, {100} left angle 013 right angle developed at the expense of {100} left angle 001 right angle at earlier stages of grain growth, whereas {103} left angle 321 right angle increased independently of these two orientations at later stages of grain growth. Reflecting these texture changes, grain growth occurred in these alloys discontinuously. Such a discontinuous grain growth with large texture changes is expected, if strong textures are already present before grain growth, and if recrystallized grains having similar orientations are distributed by forming large clusters before grain growth. (orig.)

Effect of annealing temperature on electrical properties of poly (methyl methacrylate): titanium dioxide nanocomposite films using spin coating deposition technique

International Nuclear Information System (INIS)

Ismail, L N; Habibah, Z; Herman, S H; Rusop, M

2014-01-01

Nanocomposite poly (methyl methacrylate) :titanium dioxide (PMMA :TiO 2 ) film were deposited on glass substrate. The effect of annealing temperature, especially on electrical, dielectric and the morphological properties of the thin films were investigated by current-voltage (I-V) measurement, impedance spectroscopy, and FESEM. The annealing temperature is varies from 120°C, 140°C, 160°C, 180°C and 200°C. The electrical properties results showing when nanocomposite film annealed at '20°C produce the lowest current. Meanwhile, when the annealing temperature increased, the current increased drastically and this indicates the PMMA:TiO 2 nanocomposite film are no longer having insulating properties. The dielectric properties also indicate that film annealed at 120°C has the best dielectric properties compared to other temperature. The FESEM results show that as the temperature increased, the PMMA:TiO 2 nanocomposite film started to create a phase separation between the PMMA matrix and TiO 2 nanoparticles

Sensitization of erbium in silicon-rich silica : the effect of annealing temperature and hydrogen passivation

International Nuclear Information System (INIS)

Wilkinson, A.R.; Forcales, M.; Elliman, R.G.

2005-01-01

This paper reports on the effect of annealing temperature and hydrogen passivation on the excitation cross-section and photoluminescence of erbium in silicon-rich silica. Samples were prepared by co-implantation of Si and Er into SiO 2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved photoluminescence, the effective erbium excitation cross-section is shown to increase by a factor 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 μm only in the presence of Si nanocrystals. The implications fo these results for realizing a silicon-based optical amplifier are also discussed. (author). 19 refs., 3 figs

Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

KAUST Repository

Verploegen, Eric

2010-08-18

Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

KAUST Repository

Verploegen, Eric; Mondal, Rajib; Bettinger, Christopher J.; Sok, Seihout; Toney, Michael F.; Bao, Zhenan

2010-01-01

Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature annealing of tracks induced by ion irradiation of graphite

International Nuclear Information System (INIS)

Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

2006-01-01

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

International Nuclear Information System (INIS)

Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

2007-01-01

Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

Influence of annealing temperature on structural and magnetic properties of MnFe2O4 nanoparticles

Directory of Open Access Journals (Sweden)

Surowiec Zbigniew

2015-03-01

Full Text Available Nanoparticles of manganese ferrite were obtained by the impregnation of highly ordered mesoporous MCM-41 silica support. The investigated sample contained 20% wt. Fe. The obtained nanocrystallites were strongly dispersed in silica matrix and their size was about 2 nm. The sample annealing at 500°C led to increase of particle size to about 5 nm. The Mössbauer spectroscopy investigations performed at room temperature show on occurrence of MnFe2O4 nanoparticle in superparamagnetic state for the sample annealed in all temperatures. The coexistence of superparamagnetic and ferromagnetic phase was observed at liquid nitrogen temperature. The sample annealed at 400°C and 500°C has bigger manganese ferrite particle and better crystallized structure. One can assign them the discrete hyperfine magnetic field components.

Coalescence aspects of cobalt nanoparticles during in situ high-temperature annealing

NARCIS (Netherlands)

Palasantzas, G; Vystavel, T; Koch, SA; De Hosson, JTM

2006-01-01

In this work we investigate the coalescence aspects of Co nanoparticles. It was observed that nanoparticles in contact with the substrate are relatively immobile, whereas those on top of other Co particles can rearrange themselves during high-temperature annealing and further coalesce. Indeed,

Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation

International Nuclear Information System (INIS)

Mogro-Campero, A.; Love, R.P.; Chang, M.F.; Dyer, R.F.

1987-01-01

Localized lifetime control by proton implantation can result in a considerable improvement (as much as an order of magnitude or more) in the trade-off between device turn-off time and forward voltage when compared with the unlocalized method of electron irradiation. The physical mechanisms responsible for the qualitative temperature dependences are identified: MOS channel resistance for forward voltage, carrier capture cross-section for turn-off time, and generation and diffusion components of leakage current. Since no catastrophic or unrecoverable behavior is observed, normal device operation within the tested temperature range is possible. Isothermal annealing curves of turn-off time measured after annealing, and corresponding to a few hours annealing time, reveal that a constant turn-off time is reached after about an hour. The constant value increases with temperature, but is still below the unimplanted value after 4 h at 525 0 C. The turn-off time was verified to be constant even after 24 h of annealing at 200 0 C. Lifetime control by proton implantation seems to be more thermally stable than that caused by electron irradiation. (author)

Effect of stress relief annealing temperature and atmosphere on the magnetic properties of silicon steel

International Nuclear Information System (INIS)

Paolinelli, Sebastiao C.; Cunha, Marco A. da

2006-01-01

Fully processed non-oriented silicon steel samples 0.50 mm thick were sheared and submitted to stress relief annealing under different conditions of temperature and atmosphere to investigate the effect of this treatment on the recovery of magnetic properties. Two different compositions were used, with different Si and Al contents. Temperature was varied in the range of 600-900 deg. C and four atmospheres were used: N 2 and N 2 +10%H 2 combined with dew points of -10 and 15 deg. C. The results showed that annealing atmosphere has very important effect on the magnetic properties and that the beneficial effect of stress relief annealing can be overcome by the detrimental effect of the atmosphere under certain conditions, due to oxidation and nitration

Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

2014-03-15

In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature

Directory of Open Access Journals (Sweden)

Alejandro Gonzalez-Martinez

2015-01-01

Full Text Available Identification of anaerobic ammonium oxidizing (anammox bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON and three full-scale bioreactors (anammox, CANON, and DEMON, was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature. The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C and hence a range of annealing temperatures of 44–49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

Science.gov (United States)

Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

2016-09-01

Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

Influences of annealing temperature on sprayed CuFeO2 thin films

Science.gov (United States)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Elevated temperature erosive wear of metallic materials

International Nuclear Information System (INIS)

Roy, Manish

2006-01-01

Solid particle erosion of metals and alloys at elevated temperature is governed by the nature of the interaction between erosion and oxidation, which, in turn, is determined by the thickness, pliability, morphology, adhesion characteristics and toughness of the oxide scale. The main objective of this paper is to critically review the present state of understanding of the elevated temperature erosion behaviour of metals and alloys. First of all, the erosion testing at elevated temperature is reviewed. This is followed by discussion of the essential features of elevated temperature erosion with special emphasis on microscopic observation, giving details of the erosion-oxidation (E-O) interaction mechanisms. The E-O interaction has been elaborated in the subsequent section. The E-O interaction includes E-O maps, analysis of transition criteria from one erosion mechanism to another mechanism and quantification of enhanced oxidation kinetics during erosion. Finally, the relevant areas for future studies are indicated. (topical review)

Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena

International Nuclear Information System (INIS)

Chabrerie, C.; Autran, J.L.; Paillet, P.; Flament, O.; Leray, J.L.; Boudenot, J.C.

1997-01-01

In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e., arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed

Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

Science.gov (United States)

Chen, Tao-Hsing; Chen, Ting-You

2015-11-03

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

International Nuclear Information System (INIS)

Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

2017-01-01

Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

2017-04-30

Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

Science.gov (United States)

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

[Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

Science.gov (United States)

Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

2014-07-01

In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

Annealing temperature effect on the properties of mercury-doped TiO2 films prepared by sol-gel dip-coating technique

International Nuclear Information System (INIS)

Mechiakh, R.; Ben Sedrine, N.; Karyaoui, M.; Chtourou, R.

2011-01-01

This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO 2 ). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

Effect of annealing temperature on the anatase and rutile TiO2 nano tubes formation

International Nuclear Information System (INIS)

Zainovia Lockman; Kit, C.H.; Srimala Sreekantan

2009-01-01

Herein, we report on the optimum condition for TiO 2 titania nano tubes formation and the effect of annealing on the formation of anatse and rutile titania. Anodic oxidation was carried out in two electrodes bath consisting of 5 wt % NH 4 F ions. The anode was a 0.1 mm thick Ti foil and the cathode was Pt electrode. Anodization was conducted at 20 V. The anodised foils were subjected to morphological and structural characterizations. As-anodised foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, x-ray diffraction analysis revealed the presence of (101) anatase at annealing temperature from 400 - 500 degree Celsius. This indicates that the transformation occurs at this range of temperatures. Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 degree Celsius. At above 600 degree Celsius, x-ray diffraction pattern shows a peak belonging to the rutile peak. Transformation from anatase to rutile is thought to occur at about 500 degree Celsius with a more complete transformation at higher temperature. Annealing at higher than 600 degree Celsius induces thickening of the nano tubes wall and at above 700 degree Celsius, the nano tubes structure has completely disappeared. (author)

Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

Science.gov (United States)

Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

2014-06-01

The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

Elevated temperature fracture mechanics

International Nuclear Information System (INIS)

Tomkins, B.

1979-01-01

The application of fracture mechanics concepts to cracks at elevated temperatures is examined. Particular consideration is given to the characterisation of crack tip stress-strain fields and parameters controlling crack extension under static and cyclic loads. (author)

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

Science.gov (United States)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-03-01

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

Energy Technology Data Exchange (ETDEWEB)

Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

2018-03-02

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Elevated temperature creep behavior of Inconel alloy 625

International Nuclear Information System (INIS)

Purohit, A.; Burke, W.F.

1984-07-01

Inconel 625 in the solution-annealed condition has been selected as the clad material for the fuel and control rod housing assemblies of the Upgraded Transient Reactor Test Facility (TREAT Upgrade or TU). The clad is expected to be subjected to temperatures up to about 1100 0 C. Creep behavior for the temperature range of 800 0 C to 1100 0 C of Inconel alloy 625, in four distinct heat treated conditions, was experimentally evaluated

Influence of annealing temperature on the structural, mechanical and wetting property of TiO2 films deposited by RF magnetron sputtering

International Nuclear Information System (INIS)

Pradhan, Swati S.; Sahoo, Sambita; Pradhan, S.K.

2010-01-01

TiO 2 films have been deposited on silicon substrates by radio frequency magnetron sputtering of a pure Ti target in Ar/O 2 plasma. The TiO 2 films deposited at room temperature were annealed for 1 h at different temperatures ranging from 400 o C to 800 o C. The structural, morphological, mechanical properties and the wetting behavior of the as deposited and annealed films were obtained using Raman spectroscopy, atomic force microscopy, transmission electron microscopy, nanoindentation and water contact angle (CA) measurements. The as deposited films were amorphous, and the Raman results showed that anatase phase crystallization was initiated at annealing temperature close to 400 o C. The film annealed at 400 o C showed higher hardness than the film annealed at 600 o C. In addition, the wettability of film surface was enhanced with an increase in annealing temperature from 400 o C to 800 o C, as revealed by a decrease in water CA from 87 o to 50 o . Moreover, the water CA of the films obtained before and after UV light irradiation revealed that the annealed films remained more hydrophilic than the as deposited film after irradiation.

An investigation of temperature measurement methods in nuclear power plant reactor pressure vessel annealing

International Nuclear Information System (INIS)

Acton, R.U.; Gill, W.; Sais, D.J.; Schulze, D.H.; Nakos, J.T.

1996-05-01

The objective of this project was to provide an assessment of several methods by which the temperature of a commercial nuclear power plant reactor pressure vessel (RPV) could be measured during an annealing process. This project was a coordinated effort between DOE's Office of Nuclear Energy, Science and Technology; DOE's Light Water Reactor Technology Center at Sandia National Laboratories; and the Electric Power Research Institute's Non- Destructive Evaluation Center. Ball- thermocouple probes similar to those described in NUREG/CR-5760, spring-loaded, metal- sheathed thermocouple probes, and 1778 air- suspended thermocouples were investigated in experiments that heated a section of an RPV wall to simulate a thermal annealing treatment. A parametric study of ball material, emissivity, thermal conductivity, and thermocouple function locations was conducted. Also investigated was a sheathed thermocouple failure mode known as shunting (electrical breakdown of insulation separating the thermocouple wires). Large errors were found between the temperature as measured by the probes and the true RPV wall temperature during heat-up and cool-down. At the annealing soak temperature, in this case 454 degrees C [850'F], all sensors measured the same temperature within about ±5% (23.6 degrees C [42.5 degrees F]). Because of these errors, actual RPV wall heating and cooling rates differed from those prescribed (by up to 29%). Shunting does not appear to be a problem under these conditions. The large temperature measurement errors led to the development of a thermal model that predicts the RPV wall temperature from the temperature of a ball- probe. Comparisons between the model and the experimental data for ball-probes indicate that the model could be a useful tool in predicting the actual RPV temperature based on the indicated ball- probe temperature. The model does not predict the temperature as well for the spring-loaded and air suspended probes

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Science.gov (United States)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Science.gov (United States)

Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

2012-06-01

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

Ensemble annealing of complex physical systems

OpenAIRE

Habeck, Michael

2015-01-01

Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

Influence of annealing temperature on ZnO thin films grown by dual ...

Indian Academy of Sciences (India)

Administrator

In electrical characterization as well, when annealing temperature was increased .... of ZnO (002) peaks and (c) crystallite size and stress generation on ZnO thin films ... sufficient kinetic energy and surface mobility to occupy stable positions ...

Effects of annealing and deforming temperature on microstructure and deformation characteristics of Ti-Ni-V shape memory alloy

Energy Technology Data Exchange (ETDEWEB)

He Zhirong, E-mail: hezhirong01@163.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China); Liu Manqian [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China)

2012-07-25

Highlights: Black-Right-Pointing-Pointer The deformation behaviors of annealed Ti-50.8Ni-0.5V shape memory alloy (SMA) were given. Black-Right-Pointing-Pointer The effect of annealing temperature on microstructure and deformation characteristics of Ti-50.8Ni-0.5V SMA was shown. Black-Right-Pointing-Pointer The effect of deforming temperature on deformation characteristics of Ti-50.8Ni-0.5V SMA was given. - Abstract: Effects of annealing temperature T{sub an} and deforming temperature T{sub d} on microstructure and deformation characteristics of Ti-50.8Ni-0.5V (atomic fraction, %) shape memory alloy were investigated by means of optical microscopy and tensile test. With increasing T{sub an}, the microstructure of Ti-50.8Ni-0.5V alloy wire changes from fiber style to equiaxed grain, and the recrystallization temperature of the alloy is about 580 Degree-Sign C; the critical stress for stress-induced martensite {sigma}{sub M} of the alloy decreases first and then increases, and the minimum value 382 MPa is got at T{sub an} = 450 Degree-Sign C; the residual strain {epsilon}{sub R} first increases, then decreases, and then increases, and its maximum value 2.5% is reached at T{sub an} = 450 Degree-Sign C. With increasing T{sub d}, a transformation from shape memory effect (SME) to superelasticity (SE) occurs in the alloy annealed at different temperatures, and the SME {yields} SE transformation temperature was affected by T{sub an}; the {sigma}{sub M} of the alloy increases linearly; the {epsilon}{sub R} of the alloy annealed at 350-600 Degree-Sign C decreases first and then tends to constant, while that of the alloy annealed at 650 Degree-Sign C and 700 Degree-Sign C decreases first and then increases. To get an excellent SE at room temperature for Ti-50.8Ni-0.5V alloy, T{sub an} should be 500-600 Degree-Sign C.

High-throughput sequencing of 16S rRNA gene amplicons: effects of extraction procedure, primer length and annealing temperature.

Science.gov (United States)

Sergeant, Martin J; Constantinidou, Chrystala; Cogan, Tristan; Penn, Charles W; Pallen, Mark J

2012-01-01

The analysis of 16S-rDNA sequences to assess the bacterial community composition of a sample is a widely used technique that has increased with the advent of high throughput sequencing. Although considerable effort has been devoted to identifying the most informative region of the 16S gene and the optimal informatics procedures to process the data, little attention has been paid to the PCR step, in particular annealing temperature and primer length. To address this, amplicons derived from 16S-rDNA were generated from chicken caecal content DNA using different annealing temperatures, primers and different DNA extraction procedures. The amplicons were pyrosequenced to determine the optimal protocols for capture of maximum bacterial diversity from a chicken caecal sample. Even at very low annealing temperatures there was little effect on the community structure, although the abundance of some OTUs such as Bifidobacterium increased. Using shorter primers did not reveal any novel OTUs but did change the community profile obtained. Mechanical disruption of the sample by bead beating had a significant effect on the results obtained, as did repeated freezing and thawing. In conclusion, existing primers and standard annealing temperatures captured as much diversity as lower annealing temperatures and shorter primers.

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

Energy Technology Data Exchange (ETDEWEB)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

2017-08-31

Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Reactor pressure vessel thermal annealing

International Nuclear Information System (INIS)

Lee, A.D.

1997-01-01

The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

Semiconductor annealing

International Nuclear Information System (INIS)

Young, J.M.; Scovell, P.D.

1982-01-01

A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Science.gov (United States)

Danchenko, V.; Fang, P. H.; Brashears, S. S.

1982-01-01

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

Science.gov (United States)

Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

International Nuclear Information System (INIS)

Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

2012-01-01

In the present study, effect of solution annealing temperature (1050 °C and 1100 °C) and isothermal ageing (700 °C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel (∼ 45% ferrite and ∼ 55% austenite) undergoes a series of metallurgical transformations during ageing—formation of secondary austenite (γ 2 ) and precipitation of Cr and Mo rich intermetallic (chi-χ and sigma-σ) phases. For solution annealing at 1050 °C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 °C. χ Phase precipitated after the precipitation of carbides—preferentially at the ferrite–ferrite and also at the ferrite–austenite boundaries. σ Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 °C was found to be carbides → χ → σ. On the contrary, for samples solution annealed at 1100 °C, the precipitation of χ phase was negligible. χ Phase precipitated before σ phase, preferentially along the ferrite–ferrite grain boundaries and was later consumed in the σ phase precipitation. The σ phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite γ 2 and σ phase in the ferrite and along the ferrite–austenite grain boundaries. An increase in the volume fraction of γ 2 and σ phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights: ► Effect of solution annealing temperature on microstructural evolution is studied. ► χ Phase precipitated preferentially in the samples solution annealed at

Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

Energy Technology Data Exchange (ETDEWEB)

Kashiwar, A., E-mail: akashiwar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Vennela, N. Phani, E-mail: phanivennela@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Kamath, S.L., E-mail: kamath@iitb.ac.in [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Powai, Mumbai-400076, Maharashtra (India); Khatirkar, R.K., E-mail: rajesh.khatirkar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India)

2012-12-15

In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

Science.gov (United States)

Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

2015-03-01

In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

THE RETENTION OF KRYPTON IN POLYCRYSTALLINE SILICON DURING HIGH-TEMPERATURE ANNEALING

NARCIS (Netherlands)

GREUTER, MJW; NIESEN, L; VANVEEN, A; EVANS, JH

1994-01-01

In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert

Exchange bias behavior in Ni{sub 50.0}Mn{sub 35.5} In{sub 14.5} ribbons annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Sanchez, T. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Sato Turtelli, R.; Groessinger, R. [Institut fur Festkoerperphysik, Technische Universitaet Wien, Wiedner Hauptstr. 8-10, 1040 Vienna (Austria); Sanchez, M.L.; Santos, J.D.; Rosa, W.O.; Prida, V.M. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Escoda, Ll.; Sunol, J.J. [Campus de Montilivi, Universidad de Girona, edifici PII, Lluis Santalo s/n. 17003 Girona (Spain); Koledov, V. [Kotelnikov Institute of Radio Engineering and Electronics, RAS, Moscow 125009 (Russian Federation); Hernando, B., E-mail: grande@uniovi.es [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

2012-10-15

Heusler alloy Ni{sub 50.0}Mn{sub 35.5}In{sub 14.5} ribbons were prepared by melt-spinning technique. Several short time annealings were carried out in order to enhance the exchange bias effect in this alloy ribbon. The magnetic transition temperature increases with the annealing, compared to the as-spun sample, however no significant differences in respective Curie temperatures were observed for austenite and martensite phases in such annealed samples. Exchange bias effect is observed at low temperatures for all samples and practically vanishes at 60 K for the as-spun sample, whereas for the annealed ribbons it vanishes at 100 K.

Annealing temperature effect on the properties of mercury-doped TiO{sub 2} films prepared by sol-gel dip-coating technique

Energy Technology Data Exchange (ETDEWEB)

Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Ben Sedrine, N. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Karyaoui, M. [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia)

2011-04-15

This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO{sub 2}). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

CERN Document Server

Sobolev, N A; Nikolaev, Y A

2001-01-01

A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

The effects of annealing temperature and cooling rate on carbide precipitation behavior in H13 hot-work tool steel

International Nuclear Information System (INIS)

Kang, Minwoo; Park, Gyujin; Jung, Jae-Gil; Kim, Byung-Hoon; Lee, Young-Kook

2015-01-01

Highlights: • Unexpected Mo carbides formed during slow cooling from low annealing temperatures. • Mo carbides formed during the migration of Mo for a transition of Cr-rich carbide. • Mo carbides were precipitated at the boundaries of M 7 C 3 carbides and ferrite grains. • Annealing conditions for the precipitation of Mo carbides were discussed. - Abstract: The precipitation behavior of H13 hot-work tool steel was investigated as a function of both annealing temperature and cooling rate through thermodynamic calculations and microstructural analyses using transmission and scanning electron microscope and a dilatometer. The V-rich MC carbide and Cr-rich M 7 C 3 and M 23 C 6 carbides were observed in all annealed specimens regardless of annealing and cooling conditions, as expected from an equilibrium phase diagram of the steel used. However, Mo-rich M 2 C and M 6 C carbides were unexpectedly precipitated at a temperature between 675 °C and 700 °C during slow cooling at a rate of below 0.01 °C/s from the annealing temperatures of 830 °C and below. The solubility of Mo in both M 7 C 3 and ferrite reduces with decreasing temperature during cooling. Mo atoms diffuse out of both M 7 C 3 and ferrite, and accumulate locally at the interface between M 7 C 3 and ferrite. Mo carbides were form at the interface of M 7 C 3 carbides during the transition of Cr-rich M 7 C 3 to stable M 23 C 6

Influence of low-temperature annealing on magnetic properties of (Nd0.625Ni0.375)85Al15 metallic glass

International Nuclear Information System (INIS)

Xu Feng; Wang Zhiming; Chen Guang; Jiang Jianzhong; Du Youwei

2008-01-01

After a review of the selection process of (Nd 0.625 Ni 0.375 ) 85 Al 15 as a metallic glass with a relatively high glass-forming ability, we investigate the influences of its phase transitions by duplicating the heating process of the isochronal thermal analysis with low-temperature annealings. The structure, thermal stability and magnetic properties are characterized. And the influences on magnetic properties are particularly discussed with emphasis. Both the annealing processes, to the glass-transition temperature and to the onset temperature of crystallization, bring about a higher coercivity of the sample and a higher freezing temperature of the spin-glass-state. For the sample annealed to the onset temperature of crystallization, the influence is quite obvious and is ascribed to the formation of ferrimagnetic Nd 7 Ni 3 phase, as detected by XRD. For the sample annealed to the glass-transition temperature, the indistinct influence is further identified with the analysis of the frequency dependence of the spin-glass-state, and it is mainly attributed to the change of the short-range order in the amorphous matrix

Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

Directory of Open Access Journals (Sweden)

Zhao Guanlin

2015-06-01

Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

Effect of Annealing on Strain-Temperature Response under Constant Tensile Stress in Cold-Worked NiTi Thin Wire

OpenAIRE

Yan, Xiaojun; Van Humbeeck, Jan

2011-01-01

The present paper aims to understand the influence of annealing on the strain-temperature response of a cold-worked NiTi wire under constant tensile stress. It was found that transformation behavior, stress-strain relationship, and strain-temperature response of the cold-worked NiTi wire are strongly affected by the annealing temperature. Large martensitic strains can be reached even though the applied stress is below the plateau stress of the martensite phase. At all stress levels transforma...

Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel.

Science.gov (United States)

Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

2014-09-12

The effect of annealing temperature (1000-1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN.

Effect of annealing temperature on electrochemical characteristics of ruthenium oxide/multi-walled carbon nanotube composites

Energy Technology Data Exchange (ETDEWEB)

Seo, Min-Kang [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of); Saouab, Abdelghani [Department of Mechanical Engineering, University of Le Havre, Place Robert Schuman, BP 4006, 76610 Le Havre (France); Park, Soo-Jin, E-mail: sjpark@inha.ac.k [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of)

2010-02-25

The preparation and characterization of high-surface-area ruthenium oxide (RuO{sub 2})/multi-walled carbon nanotubes (MWCNTs) composite electrodes for use in supercapacitors is reported in this work. The RuO{sub 2}/MWCNTs composites were prepared by the polyol process of RuO{sub 2} into MWCNTs and by Ru annealing in air before mixed with MWCNTs. The chemically oxidized and annealed Ru nanoparticles contribute a pseudocapacitance to the electrodes and dramatically improve the energy storage characteristics of the MWCNTs. These composites annealed at 200 deg. C demonstrate specific capacitances in excess of 130 F/g in comparison to 80 F/g for pristine MWCNTs. The annealing temperature is found to play an important role, as it affects the electrochemical performance of annealed RuO{sub 2}/MWCNTs composites critically due to its influence on the diffusion of protons into the structure.

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

International Nuclear Information System (INIS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-01-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films

International Nuclear Information System (INIS)

Bai, W.; Zhu, J.Y.; Wang, J.L.; Lin, T.; Yang, J.; Meng, X.J.; Tang, X.D.; Zhu, Z.Q.; Chu, J.H

2012-01-01

The effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius layer-structured Bi 5 Ti 3 FeO 15 (BTF) films were investigated. It was found that an annealing temperature above 625 °C can lead to the appearance of Bi 4 Ti 3 O 12 (BiT) secondary phase on Pt substrates. The reduction of the grain sizes was simultaneously confirmed by X-ray diffraction and atomic force microscopy with the introduction of the BiT phase. Moreover, the remanent polarization and coercive field of the BTF films were dramatically enhanced with the introduction of the BiT phase. Improved ferromagnetism for the BTF films was demonstrated upon increasing annealing temperature. Our data indicated that the ferroelectricity strongly correlated with the growth orientation of the BTF films. Finally, the possible factors for the obvious increase of the remanent polarization and coercive field, and the possible reasons for the enhanced ferromagnetic properties were discussed with increasing annealing temperature. - Highlights: ► Effects of annealing temperature on physical properties of BTF films were studied. ► Improved multiferroic properties were shown with annealing temperature. ► Ferroelectricity strongly depended on the growth orientation of the BTF films. ► Possible factors were proposed to explain the improved multiferroic properties.

Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

Science.gov (United States)

Bansal, Narottam P.

2008-01-01

BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

Annealing temperature effect on electrical properties of MEH-PPV thin film via spin coating method

Science.gov (United States)

Azhar, N. E. A.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Organic semiconductor has been discovered in different application devices such as organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2' -ethylhexyloxy)-1, 4-phenylenevinylene), MEH-PPV widely used in this device because its ability to produce a good optical quality films. The MEH-PPV was prepared on glass substrate by spin coating method. The thin film was investigated at different annealing temperatures. The scanning electron micrographs (SEM) revealed that sample annealed at 50°C showed uniformity and less aggregation on morphology polymer thin film. Optical properties showed the intensities of visible emission increased as temperatures increased. The current-voltage (I-V) measurement revealed that the temperature of 50°C showed high conductive and it is suitable for optoelectronic device.

Low temperature annealing of cold-drawn pearlitic steel wire

DEFF Research Database (Denmark)

Zhang, Xiaodan; Bech, Jakob Ilsted; Hansen, Niels

2015-01-01

Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires......, the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 ℃ (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large....... For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology....

Brassinosteroid signaling-dependent root responses to prolonged elevated ambient temperature.

Science.gov (United States)

Martins, Sara; Montiel-Jorda, Alvaro; Cayrel, Anne; Huguet, Stéphanie; Roux, Christine Paysant-Le; Ljung, Karin; Vert, Grégory

2017-08-21

Due to their sessile nature, plants have to cope with and adjust to their fluctuating environment. Temperature elevation stimulates the growth of Arabidopsis aerial parts. This process is mediated by increased biosynthesis of the growth-promoting hormone auxin. How plant roots respond to elevated ambient temperature is however still elusive. Here we present strong evidence that temperature elevation impinges on brassinosteroid hormone signaling to alter root growth. We show that elevated temperature leads to increased root elongation, independently of auxin or factors known to drive temperature-mediated shoot growth. We further demonstrate that brassinosteroid signaling regulates root responses to elevated ambient temperature. Increased growth temperature specifically impacts on the level of the brassinosteroid receptor BRI1 to downregulate brassinosteroid signaling and mediate root elongation. Our results establish that BRI1 integrates temperature and brassinosteroid signaling to regulate root growth upon long-term changes in environmental conditions associated with global warming.Moderate heat stimulates the growth of Arabidopsis shoots in an auxin-dependent manner. Here, Martins et al. show that elevated ambient temperature modifies root growth by reducing the BRI1 brassinosteroid-receptor protein level and downregulating brassinosteroid signaling.

Evolution of the surface plasmon resonance of Au:TiO{sub 2} nanocomposite thin films with annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Borges, J., E-mail: joelborges@fisica.uminho.pt [Universidade do Minho, Centro/Departamento de Física (Portugal); Buljan, M.; Sancho-Parramon, J.; Bogdanovic-Radovic, I.; Siketic, Z. [Rudjer Boskovic Institute (Croatia); Scherer, T.; Kübel, C. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility - KNMF (Germany); Bernstorff, S. [Elettra-Sincrotrone Trieste (Italy); Cavaleiro, A. [University of Coimbra, SEG-CEMUC, Mechanical Engineering Department (Portugal); Vaz, F.; Rolo, A. G. [Universidade do Minho, Centro/Departamento de Física (Portugal)

2014-12-15

This paper reports on the changes in the structural and morphological features occurring in a particular type of nanocomposite thin-film system, composed of Au nanoparticles (NPs) dispersed in a host TiO{sub 2} dielectric matrix. The structural and morphological changes, promoted by in-vacuum annealing experiments of the as-deposited thin films at different temperatures (ranging from 200 to 800 °C), resulted in a well-known localized surface plasmon resonance (LSPR) phenomenon, which gave rise to a set of different optical responses that can be tailored for a wide number of applications, including those for optical-based sensors. The results show that the annealing experiments enabled a gradual increase of the mean grain size of the Au NPs (from 2 to 23 nm), and changes in their distributions and separations within the dielectric matrix. For higher annealing temperatures of the as-deposited films, a broad size distribution of Au NPs was found (sizes up to 100 nm). The structural conditions necessary to produce LSPR activity were found to occur for annealing experiments above 300 °C, which corresponded to the crystallization of the gold NPs, with an average size strongly dependent on the annealing temperature itself. The main factor for the promotion of LSPR was the growth of gold NPs and their redistribution throughout the host matrix. On the other hand, the host matrix started to crystallize at an annealing temperature of about 500 °C, which is an important parameter to explain the shift of the LSPR peak position to longer wavelengths, i.e. a red-shift.

Influence of annealing temperature and environment on the properties of indium tin oxide thin films

International Nuclear Information System (INIS)

Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

2005-01-01

Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Science.gov (United States)

Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

2017-07-01

Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

Science.gov (United States)

Senol, Abdulkadir; Gulen, Mahir; Yildirim, Gurcan; Ozturk, Ozgur; Varilci, Ahmet; Terzioglu, Cabir; Belenli, Ibrahim

2013-03-01

In this study, we investigate the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto Soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In2O3:SnO2, 90:10 wt. %) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 ° C. Resistivity, Hall Effect, X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. Furthermore, mobility, carrier density and conductivity characteristics of the samples prepared are carried out as function of temperature in the range of 80-300 K at the magnetic field of 0.550 T. The results obtained show that all the properties depend strongly on the annealing temperature and in fact the film annealed at 400 ° C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.

Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

International Nuclear Information System (INIS)

Tong Liuniu; Wang Yichao; He Xianmei; Han Huaibin; Xia Ailin; Hu Jinlian

2012-01-01

We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr 2+ ions substituting for Zn 2+ ions without any detectable secondary phase in as-synthesized Zn 0.97 Cr 0.03 O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M s as well as an increase of coercivity of H 2 -annealed Zn 0.97 Cr 0.03 O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H o may play an important role in the origin of H 2 -annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles. - Graphical Abstract: The H 2 -annealing induced enhancement of room temperature ferromagnetism in Cr-doped ZnO nanoparticles is observed. It is found that the field-cooled M-T curves can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. The PL data show evidence that the hydrogen related shallow donor defect or/and defect complexes may be responsible for it. Display Omitted Highlights: ► The H 2 -annealing induced a large enhancement of

The Role of Annealing Temperature on Structural and Magnetic Properties of NdFeB Thin Films

Directory of Open Access Journals (Sweden)

A. Khanjani

2016-06-01

Full Text Available In the present research NdFeB thin films coupled with buffer and capping layer of W were formed on Si/SiO2 substrate by means of RF magnetron sputtering. The system was annealed at vaccum at different temperatures of 450, 500, 550,. 600 and 650 °C Phase analysis was carried out by XRD and it was found that NdFeB was formed without the formation of any kind of secondary phase. The cross sectional and grain size of the thin films were measured by scanning electron microscopy. Morphological studies were performed by atomic force microscopy. Magnetic properties of thin films including coercivity, saturation of magnetization and hysteresis area were evcaluated by vibrating sample magnetometer. It was found that by annealing at 400 °C the amorphous layer was formed.The highest intensity of peaks was formed at 550 °C and with an increase in temperature the intensity was declined. The grain size was increased by temperature and had an impact on the coercivity. With an increase of temperature up to 600 °C, perpendicular coercivity was increased and then by further increase of temperatute, coercivity was reduced. Based on the obtained data the temperature of 600 °C was selected as the optimum annealing temperature for reaching enhanced structural and magnetic feature.

Elevated environmental temperature and methamphetamine neurotoxicity

International Nuclear Information System (INIS)

Miller, Diane B.; O'Callaghan, James P.

2003-01-01

Amphetamines have been of considerable research interest for the last several decades. More recent work has renewed interest in the role of ambient temperature in both the toxicity and neurotoxicity of these drugs. We have determined that the striatal dopaminergic neurotoxicity observed in the mouse is linked in some fashion to both body and environmental temperature. Most studies of d-methamphetamine (d-METH) neurotoxicity are conducted at standard laboratory ambient temperatures (e.g., ∼21-22 deg. C) and utilizing a repeated dosage regimen (e.g., three to four injections spaced 2 h apart). A lowering of the ambient temperature provides neuro protection, while an elevation increases neurotoxicity. d-METH causes long-term depletions of triatal dopamine (DA) that are accompanied by other changes that are indicative of nerve terminal degeneration. These include argyrophilia, as detected by silver degeneration stains, and an elevation in glial fibrillary acidic protein (GFAP), a marker of reactive gliosis in response to injury, as well as a long-term decrease in tyrosine hydroxylase (TH) protein levels. here we show that increasing the ambient temperature during and for some time following dosing increases the neurotoxicity of d-METH. Mice (female 57BL6/J) given a single dosage of d-METH (20 mg/kg s.c.) and maintained at the usual laboratory ambient temperature show minimal striatal damage (an ∼15% depletion of DA and an ∼ 86% increase in GFAP). substantial striatal damage (e.g., an ∼70% depletion of DA and an ∼200% elevation in GFAP) was induced by this regimen if mice were maintained at 27 deg. C for 24 or 72 h following dosing. An increase in neurotoxicity was also apparent in mice kept at an elevated temperature for only 5 or 9 h, but keeping animals at 27 deg. C for 24 or 72 h was the most effective in increasing the neurotoxicity of d-METH. Our data show how a relatively minor change in ambient temperature can have a major impact on the degree of

Rapid thermal pulse annealing

International Nuclear Information System (INIS)

Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

1976-01-01

Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

Modeling of AlMg Sheet Forming at Elevated Temperatures

NARCIS (Netherlands)

van den Boogaard, Antonius H.; Bolt, P.; Werkhoven, R.

2001-01-01

The process limits of aluminum sheet forming processes can be improved by control-ling local flow behavior by means of elevated temperatures and temperature gradients. In order to accurately model the deep drawing or stretching of aluminum sheet at elevated temperatures, a model is required that

Annealing temperature dependent non-monotonic d{sup 0} ferromagnetism in pristine In{sub 2}O{sub 3} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Cao, Haiming; Xing, Pengfei, E-mail: pfxing@tju.edu.cn; Yao, Dongsheng; Wu, Ping

2017-05-01

Cubic bixbyite In{sub 2}O{sub 3} nanoparticles with room temperature d{sup 0} ferromagnetism were prepared by sol-gel method with the air annealing temperature ranging from 500 to 900 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Raman-scattering and photoluminescence were carried out to demonstrate the presence of oxygen vacancies. The lattice constant, the atomic ratio of crystal O and In, the Raman peak at 369 cm{sup −1}, the PL emission peak at 396 nm and the saturation magnetization of d{sup 0} ferromagnetism all had a consistent non-monotonic change with the increasing annealing temperature. With further considering the relation between the grain size and the distribution of oxygen vacancies, we think that d{sup 0} ferromagnetism in our samples is directly related with the singly charged oxygen vacancies at the surface of In{sub 2}O{sub 3} nanoparticles. - Highlights: • Effect of air-annealing temperature on the d{sup 0} ferromagnetism of pure In{sub 2}O{sub 3}. • Oxygen-deficiency states of all samples were detected by Raman scattering and PL. • Ferromagnetism changes non-monotonically with the increasing annealing temperature. • d{sup 0} ferromagnetism in our In{sub 2}O{sub 3} nanoparticles is related with the surface V{sub O}{sup +}.

Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

Directory of Open Access Journals (Sweden)

Priyanka Kakoty

2017-04-01

Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

International Nuclear Information System (INIS)

Yen, C.-Y.; Jian, S.-R.; Chen, G.-J.; Lin, C.-M.; Lee, H.-Y.; Ke, W.-C.; Liao, Y.-Y.; Yang, P.-F.; Wang, C.-T.; Lai, Y.-S.; Jang, Jason S.-C.; Juang, J.-Y.

2011-01-01

ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 deg. C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 deg. C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 deg. C and 500 deg. C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.

Semiconductor annealing

International Nuclear Information System (INIS)

Young, J.M.; Scovell, P.D.

1981-01-01

A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

Results of performance testing the Russian RPV temperature measurement probe used for annealing

International Nuclear Information System (INIS)

Nakos, J.T.; Selsky, S.

1998-03-01

This paper provides information on three (3) topics related to temperature measurements in an annealing procedure: (1) results of a series of experiments performed by CNIITMASH of the Russian consortium MOHT on their reactor pressure vessel (RPV) temperature measurement probe, (2) a discussion regarding uncertainties and errors in RPV temperature measurements, and (3) predictions from a thermal model of a spherical RPV temperature measurement probe. MOHT teamed with MPR Associates and was to perform the Annealing Demonstration Project (ADP) on behalf of the US Department of Energy, ESEERCo, EPRI, CRIEPI, Framatome, and Consumers Power Co. at the Midland plant. Experimental results show that the CNIITMASH probe errors are a maximum of about 27 C (49 F) during a 15 C/hr (27 F/hr) heat-up but only about 3 C (5.4 F) (0.6%) during the hold portion at 470 C (878 F). These errors are much smaller than those obtained from a similar series of experiments performed by Sandia National Laboratories (Sandia). The discussion about uncertainties and errors shows that results presented as a temperature difference provides a measure of the probe error. Qualitative agreement is shown between the model predictions, the experimental results of the CNIITMASH probe and the experimental results of a series of similar experiments performed by Sandia

On simulated annealing phase transitions in phylogeny reconstruction.

Science.gov (United States)

Strobl, Maximilian A R; Barker, Daniel

2016-08-01

Phylogeny reconstruction with global criteria is NP-complete or NP-hard, hence in general requires a heuristic search. We investigate the powerful, physically inspired, general-purpose heuristic simulated annealing, applied to phylogeny reconstruction. Simulated annealing mimics the physical process of annealing, where a liquid is gently cooled to form a crystal. During the search, periods of elevated specific heat occur, analogous to physical phase transitions. These simulated annealing phase transitions play a crucial role in the outcome of the search. Nevertheless, they have received comparably little attention, for phylogeny or other optimisation problems. We analyse simulated annealing phase transitions during searches for the optimal phylogenetic tree for 34 real-world multiple alignments. In the same way in which melting temperatures differ between materials, we observe distinct specific heat profiles for each input file. We propose this reflects differences in the search landscape and can serve as a measure for problem difficulty and for suitability of the algorithm's parameters. We discuss application in algorithmic optimisation and as a diagnostic to assess parameterisation before computationally costly, large phylogeny reconstructions are launched. Whilst the focus here lies on phylogeny reconstruction under maximum parsimony, it is plausible that our results are more widely applicable to optimisation procedures in science and industry. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Effect of annealing on bulk heterojunction organic solar cells based on copper phthalocyanine and perylene derivative

KAUST Repository

Kim, Inho

2012-02-01

We investigated the effects of annealing on device performances of bulk heterojunction organic solar cells based on copper phthalocyanine (CuPc) and N,N′-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C6). Blended films of CuPc and PTCDI-C6 with annealing at elevated temperature were characterized by measuring optical absorption, photoluminescence, and X-ray diffraction. Enhanced molecular ordering and increments in domain sizes of donor and acceptor for the blended films were observed, and their influences on device performances were discussed. Annealing led to substantial improvements in photocurrent owing to enhanced molecular ordering and formation of percolation pathways. © 2011 Elsevier B.V. All rights reserved.

The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

International Nuclear Information System (INIS)

Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

2016-01-01

CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

Plastic responses to elevated temperature in low and high elevation populations of three grassland species.

Science.gov (United States)

Frei, Esther R; Ghazoul, Jaboury; Pluess, Andrea R

2014-01-01

Local persistence of plant species in the face of climate change is largely mediated by genetic adaptation and phenotypic plasticity. In species with a wide altitudinal range, population responses to global warming are likely to differ at contrasting elevations. In controlled climate chambers, we investigated the responses of low and high elevation populations (1200 and 1800 m a.s.l.) of three nutrient-poor grassland species, Trifolium montanum, Ranunculus bulbosus, and Briza media, to ambient and elevated temperature. We measured growth-related, reproductive and phenological traits, evaluated differences in trait plasticity and examined whether trait values or plasticities were positively related to approximate fitness and thus under selection. Elevated temperature induced plastic responses in several growth-related traits of all three species. Although flowering phenology was advanced in T. montanum and R. bulbosus, number of flowers and reproductive allocation were not increased under elevated temperature. Plasticity differed between low and high elevation populations only in leaf traits of T. montanum and B. media. Some growth-related and phenological traits were under selection. Moreover, plasticities were not correlated with approximate fitness indicating selectively neutral plastic responses to elevated temperature. The observed plasticity in growth-related and phenological traits, albeit variable among species, suggests that plasticity is an important mechanism in mediating plant responses to elevated temperature. However, the capacity of species to respond to climate change through phenotypic plasticity is limited suggesting that the species additionally need evolutionary adaptation to adjust to climate change. The observed selection on several growth-related and phenological traits indicates that the study species have the potential for future evolution in the context of a warming climate.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Structural changes of manganese spinel at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Li, Guohua; Iijima, Yukiko; Azuma, Hideto [Nishi Battery Laboratories, Sony Corporation, 4-16-1 Okata, Kanagawa 243-0021 Atsugi (Japan); Kudo, Yoshihiro [Technical Support Center, Sony Corporation, 4-16-1 Okata, Kanagawa 243-0021 Atsugi (Japan)

2002-01-01

A chemical synthesis route to Cr-doped and undoped Mn spinel was developed for the purpose of detailed structural analysis for elucidating the relationship between storage performance and structural changes at elevated temperatures. We identified a two-phase segregation in the lithium compositional range of 0.6elevated temperatures was observed for electrochemical cells. These two phases also coexist in Cr-doped spinel in the lithium compositional range of 0.4elevated temperatures. X-ray absorption fine structure (XAFS) analysis revealed that the Cr-doped samples showed less change in the local structure after storage than the undoped spinel samples. These results suggest that the Cr-doped spinel has higher structural stability at elevated temperatures than the undoped spinel.

Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings.

Science.gov (United States)

Yang, Yu-Sen; Cho, Ting-Pin

2013-08-07

Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr₂N, (CrAl)₂N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr₂N and (CrAl)₂N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness.

Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

International Nuclear Information System (INIS)

Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

2013-01-01

FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-02-01

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

International Nuclear Information System (INIS)

Hu, Yu-Min; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

2015-01-01

In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu 2+ state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu 1+ ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites

Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

International Nuclear Information System (INIS)

Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

2013-01-01

The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t Co )] 6 multilayers (where t Co indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K eff ) increases significantly with an increase in t Co from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t Co , followed by a slight reduction at the highest Co thickness, t Co  = 0.6 nm. In order to explain the t Co dependence on K eff , the intrinsic PMA energy density (K i ) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K i value increases nearly linearly with the increase in t Co from 0.2 to 0.5 nm, followed by saturation at a higher t Co value of 0.6 nm. Owing to a close relationship between K i and the quality of the interfaces, these results indicate a similar t Co dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t Co dependence on the amount of the second phase. The K i value is nearly independent of the annealing temperature at t Co  ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C

Elevated temperature drives kelp microbiome dysbiosis, while elevated carbon dioxide induces water microbiome disruption.

Directory of Open Access Journals (Sweden)

Jeremiah J Minich

Full Text Available Global climate change includes rising temperatures and increased pCO2 concentrations in the ocean, with potential deleterious impacts on marine organisms. In this case study we conducted a four-week climate change incubation experiment, and tested the independent and combined effects of increased temperature and partial pressure of carbon dioxide (pCO2, on the microbiomes of a foundation species, the giant kelp Macrocystis pyrifera, and the surrounding water column. The water and kelp microbiome responded differently to each of the climate stressors. In the water microbiome, each condition caused an increase in a distinct microbial order, whereas the kelp microbiome exhibited a reduction in the dominant kelp-associated order, Alteromondales. The water column microbiomes were most disrupted by elevated pCO2, with a 7.3 fold increase in Rhizobiales. The kelp microbiome was most influenced by elevated temperature and elevated temperature in combination with elevated pCO2. Kelp growth was negatively associated with elevated temperature, and the kelp microbiome showed a 5.3 fold increase Flavobacteriales and a 2.2 fold increase alginate degrading enzymes and sulfated polysaccharides. In contrast, kelp growth was positively associated with the combination of high temperature and high pCO2 'future conditions', with a 12.5 fold increase in Planctomycetales and 4.8 fold increase in Rhodobacteriales. Therefore, the water and kelp microbiomes acted as distinct communities, where the kelp was stabilizing the microbiome under changing pCO2 conditions, but lost control at high temperature. Under future conditions, a new equilibrium between the kelp and the microbiome was potentially reached, where the kelp grew rapidly and the commensal microbes responded to an increase in mucus production.

Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

Science.gov (United States)

Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

2014-06-01

Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

Science.gov (United States)

Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

International Nuclear Information System (INIS)

Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

2010-01-01

Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

Extrapolation of zircon fission-track annealing models

International Nuclear Information System (INIS)

Palissari, R.; Guedes, S.; Curvo, E.A.C.; Moreira, P.A.F.P.; Tello, C.A.; Hadler, J.C.

2013-01-01

One of the purposes of this study is to give further constraints on the temperature range of the zircon partial annealing zone over a geological time scale using data from borehole zircon samples, which have experienced stable temperatures for ∼1 Ma. In this way, the extrapolation problem is explicitly addressed by fitting the zircon annealing models with geological timescale data. Several empirical model formulations have been proposed to perform these calibrations and have been compared in this work. The basic form proposed for annealing models is the Arrhenius-type model. There are other annealing models, that are based on the same general formulation. These empirical model equations have been preferred due to the great number of phenomena from track formation to chemical etching that are not well understood. However, there are two other models, which try to establish a direct correlation between their parameters and the related phenomena. To compare the response of the different annealing models, thermal indexes, such as closure temperature, total annealing temperature and the partial annealing zone, have been calculated and compared with field evidence. After comparing the different models, it was concluded that the fanning curvilinear models yield the best agreement between predicted index temperatures and field evidence. - Highlights: ► Geological data were used along with lab data for improving model extrapolation. ► Index temperatures were simulated for testing model extrapolation. ► Curvilinear Arrhenius models produced better geological temperature predictions

Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

International Nuclear Information System (INIS)

Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

2010-01-01

We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

The influence of annealing temperature and time on the efficiency of pentacene: PTCDI organic solar cells

Directory of Open Access Journals (Sweden)

Mehmet Biber

Full Text Available In this study, fabrication of a polycyclic aromatic hydrocarbon/Perylene Tetracarboxylic Di-Imide (PTCDI, donor/acceptor solar cells are presented using physical vapour deposition technique in a 1000 class glove box. An ITO/PEDOT:PSS/Pentacene/PTCDI/Al (ITO = Indium Tin Oxide and PEDOT:PSS = poly(3,4-ethylenedioxythiophene polystyrene sulfonate solar cell has been obtained and the power conversion efficiency, PCE (η of about 0.33% has been obtained under simulated solar illumination of 300 W/m2. Furthermore, the effects of annealing temperatures (at 100 and 150 °C and of annealing (at 100 °C times for 5 and 10 min. on the power conversion efficiency, η of the solar cells have also been investigated. In general, it has been seen that the thermal annealing deteriorated the characteristics parameters of Pentacene/PTCDI solar cell such that both fill factor, FF and η decreased after annealing and with increase of annealing time. Atomic force microscopy (AFM images showed that the phase segregation and grain size increased and the surface roughness of Pentacene film decreased and these effects reduced the η value. The η values of the solar cell have been determined as 0.33%, 0.12% and 0.06% for pre-annealing, annealing at 100 and 150 °C, respectively. Keywords: Organic solar cells, PTCDI, Pentacene, Annealing

Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

NARCIS (Netherlands)

Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

2013-01-01

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

Damage annealing in low temperature Fe/Mn implanted ZnO

International Nuclear Information System (INIS)

Gunnlaugsson, H. P.; Bharuth-Ram, K.; Johnston, K.; Langouche, G.; Mantovan, R.; Mølholt, T. E.; Naidoo, D.; Ólafsson, O.; Weyer, G.

2015-01-01

57 Fe Emission Mössbauer spectra obtained after low fluence (<10 12 cm −2 ) implantation of 57 Mn (T 1/2 = 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe 2+ and Fe 3+ on Zn sites, interstitial Fe and Fe in damage regions (Fe D ). The Fe D component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10 15 cm −2 ) 57 Fe/ 57 Co implanted ZnO and 57 Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT

Effect of Annealing Temperature on the Corrosion Protection of Hot Swaged Ti-54M Alloy in 2 M HCl Pickling Solutions

Directory of Open Access Journals (Sweden)

El-Sayed M. Sherif

2017-01-01

Full Text Available The corrosion of Ti-54M titanium alloy processed by hot rotary swaging and post-annealed to yield different grain sizes, in 2 M HCl solutions is reported. Two annealing temperatures of 800 °C and 940 °C, followed by air cooling and furnace cooling were used to give homogeneous grain structures of 1.5 and 5 μm, respectively. It has been found that annealing the alloy at 800 °C decreased the corrosion of the alloy, with respect to the hot swaged condition, through increasing its corrosion resistance and decreasing the corrosion current and corrosion rate. Increasing the annealing temperature to 940 °C further decreased the corrosion of the alloy.

Annealing behavior of alpha recoil tracks in phlogopite

International Nuclear Information System (INIS)

Gao Shaokai; Yuan Wanming; Dong Jinquan; Bao Zengkuan

2005-01-01

Alpha recoil tracks (ARTs) formed during the a-decay of U, Th as well as their daughter nuclei are used as a new dating method which is to some extent a complementarity of fission track dating due to its ability to determine the age of young mineral. ARTs can be observable under phase-contrast interference microscope through chemical etching. In order to study the annealing behavior of ARTs in phlogopite, two methods of annealing experiments were executed. Samples were annealed in the electronic tube furnace at different temperatures ranging from 250 degree C to 450 degree C in steps of 50 degree C. For any given annealing temperature, different annealing times were used until total track fading were achieved. It is found that ARTs anneal much more easily than fission tracks, the annealing ratio increase non-linearly with annealing time and temperature. Using the Arrhenius plot, an activation energy of 0.68ev is finally found for 100% removal of ARTs, which is less than the corresponding value for fission tracks (FTs). Through extending the annealing time to geological time, a much lower temperature range of the sample's cooling history can be got.

[Effect of annealing temperature on the crystallization and spectroscopic response of a small-molecule semiconductor doped in polymer film].

Science.gov (United States)

Yin, Ming; Zhang, Xin-Ping; Liu, Hong-Mei

2012-11-01

The crystallization properties of the perylene (EPPTC) molecules doped in the solid film of the derivative of polyfluorene (F8BT) at different annealing temperatures, as well as the consequently induced spectroscopic response of the exciplex emission in the heterojunction structures, were studied in the present paper. Experimental results showed that the phase separation between the small and the polymer molecules in the blend film is enhanced with increasing the annealing temperature, which leads to the crystallization of the EPPTC molecules due to the strong pi-pi stacking. The size of the crystal phase increases with increasing the annealing temperature. However, this process weakens the mechanisms of the heterojunction configuration, thus, the total interfacial area between the small and the polymer molecules and the amount of exciplex are reduced significantly in the blend film. Meanwhile, the energy transfer from the polymer to the small molecules is also reduced. As a result, the emission from the exciplex becomes weaker with increasing the annealing temperature, whereas the stronger emission from the polymer molecules and from the crystal phase of the small molecules can be observed. These experimental results are very important for understanding and tailoring the organic heterojunction structures. Furthermore, this provides photophysics for improving the performance of photovoltaic or solar cell devices.

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

Science.gov (United States)

Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

2014-02-01

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

Energy Technology Data Exchange (ETDEWEB)

Vinattieri, A.; Batignani, F. [Dipartimento di Fisica e Astronomia, LENS, CNISM, Università di Firenze (Italy); Bogani, F. [Dipartimento di Ingegneria Industriale, Università di Firenze (Italy); Meneghini, M.; Meneghesso, G.; Zanoni, E. [Dipartimento di Ingegneria dell' Informazione, Università di Padova (Italy); Zhu, D.; Humphreys, C. J. [Department Materials Science, University of Cambridge, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

ELEVATED TEMPERATURE EFFECTS ON THE ELECTRICAL ...

African Journals Online (AJOL)

The effects of elevated temperatures on the electrical properties of Bi metal probe to Si thin films had been investigated for electric field values 10-100V/m. Measurements of current (I) – voltage (V) characteristics were obtained at temperatures 300,320,340,360,380 and 400K respectively. The results indicated linear I–V ...

Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings

Science.gov (United States)

Yang, Yu-Sen; Cho, Ting-Pin

2013-01-01

Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr2N, (CrAl)2N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr2N and (CrAl)2N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness. PMID:28811440

Strength properties of concrete at elevated temperatures

International Nuclear Information System (INIS)

Freskakis, G.N.; Burrow, R.C.; Debbas, E.B.

1979-01-01

A study is presented concerning the compressive strength, modulus of elasticity, and stress-strain relationships of concrete at elevated temperatures. A review of published results provides information for the development of upper and lower bound relationships for compressive strength and the modulus of elasticity and establishes exposure conditions for a lower bound thermal response. The relationships developed from the literature review are confirmed by the results of a verification test program. The strength and elasticity relationships provide a basis for the development of design stress-strain curves for concrete exposed to elevated temperatures

Defect formation in n-type InP at elevated temperatures of irradiation

International Nuclear Information System (INIS)

Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1990-01-01

Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

Science.gov (United States)

Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

2014-10-07

In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

Synthesis of stable TiO2 nanotubes: effect of hydrothermal treatment, acid washing and annealing temperature.

Science.gov (United States)

López Zavala, Miguel Ángel; Lozano Morales, Samuel Alejandro; Ávila-Santos, Manuel

2017-11-01

Effect of hydrothermal treatment, acid washing and annealing temperature on the structure and morphology of TiO 2 nanotubes during the formation process was assessed. X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy analysis were conducted to describe the formation and characterization of the structure and morphology of nanotubes. Hydrothermal treatment of TiO 2 precursor nanoparticles and acid washing are fundamental to form and define the nanotubes structure. Hydrothermal treatment causes a change in the crystallinity of the precursor nanoparticles from anatase phase to a monoclinic phase, which characterizes the TiO 2 nanosheets structure. The acid washing promotes the formation of high purity nanotubes due to Na + is exchanged from the titanate structure to the hydrochloric acid (HCl) solution. The annealing temperature affects the dimensions, structure and the morphology of the nanotubes. Annealing temperatures in the range of 400 °C and 600 °C are optimum to maintain a highly stable tubular morphology of nanotubes. Additionally, nanotubes conserve the physicochemical properties of the precursor Degussa P25 nanoparticles. Temperatures greater than 600 °C alter the morphology of nanotubes from tubular to an irregular structure of nanoparticles, which are bigger than those of the precursor material, i.e., the crystallinity turn from anatase phase to rutile phase inducing the collapse of the nanotubes.

Annealing effect reversal by water sorption-desorption and heating above the glass transition temperature-comparison of properties.

Science.gov (United States)

Saxena, A; Jean, Y C; Suryanarayanan, R

2013-08-05

Our objective is to compare the physical properties of materials obtained from two different methods of annealing reversal, that is, water sorption-desorption (WSD) and heating above glass transition temperature (HAT). Trehalose was annealed by storing at 100 °C for 120 h. The annealing effect was reversed either by WSD or HAT, and the resulting materials were characterized by differential scanning calorimetry (DSC), water sorption studies, and positron annihilation spectroscopy (PAS). While the products obtained by the two methods of annealing reversal appeared to be identical by conventional characterization methods, they exhibited pronounced differences in their water sorption behavior. Positron annihilation spectroscopy (PAS), by measuring the fractional free volume changes in the processed samples, provided a mechanistic explanation for the differences in the observed behavior.

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

International Nuclear Information System (INIS)

Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

2012-01-01

The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

Science.gov (United States)

Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

2014-11-01

Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

Effect of elevated temperature on the compressive strength of ...

African Journals Online (AJOL)

Based on results of tests, partial replacement of cement with 10 % PSMS is recommended for use in concrete production and resistance to elevated temperature. The studies show that at this replacement, the concrete compressive strength is not adversely affected when the elevated temperature reaches 500°C. Keywords: ...

Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

International Nuclear Information System (INIS)

Hu, Y.M.; Lin, C.W.; Huang, J.C.A.

2006-01-01

High-quality (0001) oriented ZnO (300 A) film and [ZnO(100 A)/Al(t Al )] 3 (t Al = 0.6, 1.7, 2.8 A) multilayers have been established at room temperature on Al 2 O 3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 A thin is 1.7 A (about one Al atomic layer) and 400 deg. C, respectively, leading to the relatively lower resistivity (2.8 x 10 -3 Ω cm) and higher Hall mobility (10 cm 2 /V.s) without suppression of the visible transmittance (above 85%)

Annealing-induced Ge/Si(100) island evolution

International Nuclear Information System (INIS)

Zhang Yangting; Drucker, Jeff

2003-01-01

Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

Calculation of temperature fields formed in induction annealing of closing welded joint of jacket of steam generator for WWER 440 type nuclear power plant using ICL 2960 computer

International Nuclear Information System (INIS)

Sajnar, P.; Fiala, J.

1983-01-01

The problems are discussed of the mathematical description and simulation of temperature fields in annealing the closing weld of the steam generator jacket of the WWER 440 nuclear power plant. The basic principles are given of induction annealing, the method of calculating temperature fields is indicated and the mathematical description is given of boundary conditions on the outer and inner surfaces of the steam generator jacket for the computation of temperature fields arising during annealing. Also described are the methods of determining the temperature of exposed parts of heat exchange tubes inside the steam generator and the technical possibilities are assessed of the annealing equipment from the point of view of its computer simulation. Five alternatives are given for the computation of temperature fields in the area around the weld for different boundary conditions. The values are given of maximum differences in the temperatures of the metal in the annealed part of the steam generator jacket which allow the assessment of individual computation variants, this mainly from the point of view of observing the course of annealing temperature in the required width of the annealed jacket of the steam generator along both sides of the closing weld. (B.S.)

Elevation in brain temperature during paradoxical sleep.

Science.gov (United States)

Kawamura, H; Sawyer, C H

1965-11-12

During ordinary sleep, the temperature of the rabbit brain tended to drop, but during paradoxical sleep it rose sharply 0.1 degrees to 0.4 degrees C, a greater elevation than was observed during arousal. Changes in body temperature generally did not parallel the alterations in brain temperature. Shifts of direct-current potential in the brain are basically independent of the changes in brain temperature.

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

Science.gov (United States)

Draper, Susan L.

1987-01-01

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

Science.gov (United States)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Processing of fine grained AISI 304L austenitic stainless steel by cold rolling and high-temperature short-term annealing

Science.gov (United States)

Naghizadeh, Meysam; Mirzadeh, Hamed

2018-05-01

An advanced thermomechanical process based on the formation and reversion of deformation-induced martensite was used to refine the grain size and enhance the hardness of an AISI 304L austenitic stainless steel. Both low and high reversion annealing temperatures and also the repetition of the whole thermomechanical cycle were considered. While a microstructure with average austenite grain size of a few micrometers was achieved based on cold rolling and high-temperature short-term annealing, an extreme grain refinement up to submicrometer regime was obtained by cold rolling followed by low-temperature long-term annealing. However, the required annealing time was found to be much longer, which negates its appropriateness for industrial production. While a magnificent grain refinement was achieved by one pass of the high-temperature thermomechanical process, the reduction in grain size was negligible by the repetition of the whole cycle. It was found that the hardness of the thermomechanically processed material is much higher than that of the as-received material. The results of the present work were shown to be compatible with the general trend of grain size dependence of hardness for AISI 304L stainless steel based on the Hall-Petch relationship. The results were also discussed based on the X-ray evaluation of dislocation density by modified Williamson-Hall plots.

Corrosion resistance of duplex stainless steel subjected to long-term annealing in the spinodal decomposition temperature range

International Nuclear Information System (INIS)

Lo, K.H.; Kwok, C.T.; Chan, W.K.; Zeng, D.

2012-01-01

Highlights: ► Long-term DLEPR data on duplex stainless steel. ► Spinodal decomposition remains unabated even after 15,000 h of annealing. ► Effect of long-term annealing on healing has been investigated. - Abstract: The effect of thermal annealing up to 15,000 h between 300 °C and 500 °C on the corrosion resistance of the duplex stainless steel (DSS) 7MoPLUS has been investigated by using the DLEPR test. Spinodal decomposition in 7MoPLUS is unabated even after annealing for 15,000 h and no healing has been observed. The possible healing mechanisms in this temperature range (back diffusion of Cr atoms from the Cr-rich ferrite (α Cr ) and diffusion of Cr atoms from the austenite) and its absence in the present steel have been discussed.

Intrapartum Temperature Elevation, Epidural Use, and Adverse Outcome in Term Infants

Science.gov (United States)

Wyshak, Grace; Ringer, Steven A.; Johnson, Lise C.; Rivkin, Michael J.; Lieberman, Ellice

2012-01-01

OBJECTIVES: To examine the association of intrapartum temperature elevation with adverse neonatal outcome among low-risk women receiving epidural analgesia and evaluate the association of epidural with adverse neonatal outcome without temperature elevation. METHODS: We studied all low-risk nulliparous women with singleton pregnancies ≥37 weeks delivering at our hospital during 2000, excluding pregnancies where infants had documented sepsis, meningitis, or a major congenital anomaly. Neonatal outcomes were compared between women receiving (n = 1538) and not receiving epidural analgesia (n = 363) in the absence of intrapartum temperature elevation (≤99.5°F) and according to the level of intrapartum temperature elevation within the group receiving epidural (n = 2784). Logistic regression was used to evaluate neonatal outcome while controlling for confounders. RESULTS: Maternal temperature >100.4°F developed during labor in 19.2% (535/2784) of women receiving epidural compared with 2.4% (10/425) not receiving epidural. In the absence of intrapartum temperature elevation (≤99.5°F), no significant differences were observed in adverse neonatal outcomes between women receiving and not receiving epidural. Among women receiving epidural, a significant linear trend was observed between maximum maternal temperature and all neonatal outcomes examined including hypotonia, assisted ventilation, 1- and 5-min Apgar scores 101°F had a two- to sixfold increased risk of all adverse outcomes examined. CONCLUSIONS: The proportion of infants experiencing adverse outcomes increased with the degree of epidural-related maternal temperature elevation. Epidural use without temperature elevation was not associated with any of the adverse outcomes we studied. PMID:22291120

Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

Energy Technology Data Exchange (ETDEWEB)

Tahara, Masaki [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Kim, Hee Young, E-mail: heeykim@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Hosoda, Hideki [Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Nam, Tae-hyun [School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Miyazaki, Shuichi, E-mail: miyazaki@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

2010-10-15

Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of {alpha} phase increases M{sub s} and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M{sub s} and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of {alpha} phase can be attributed to the fact that N is absorbed in {alpha} phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M{sub s} of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of {alpha} phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

International Nuclear Information System (INIS)

Tahara, Masaki; Kim, Hee Young; Hosoda, Hideki; Nam, Tae-hyun; Miyazaki, Shuichi

2010-01-01

Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of α phase increases M s and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M s and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of α phase can be attributed to the fact that N is absorbed in α phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M s of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of α phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2015-01-01

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

International Nuclear Information System (INIS)

Reddy, V. Rajagopal; Rao, P. Koteswara; Ramesh, C.K.

2007-01-01

Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (n d = 4.07 x 10 17 cm -3 ) have been investigated using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV (I-V) and 0.93 eV (C-V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 deg. C and slightly decreased upon annealing at temperatures of 400 deg. C and 500 deg. C. The extracted Schottky barrier heights are 0.99 eV (I-V), 1.34 eV (C-V) for 300 deg. C, 0.88 eV (I-V), 1.20 eV (C-V) for 400 deg. C and 0.72 eV (I-V), 1.08 eV (C-V) for 500 deg. C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures

Optical scattering characteristic of annealed niobium oxide films

International Nuclear Information System (INIS)

Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

2005-01-01

Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

Elevated [CO2] does not ameliorate the negative effects of elevated temperature on drought-induced mortality in Eucalyptus radiata seedlings.

Science.gov (United States)

Duan, Honglang; Duursma, Remko A; Huang, Guomin; Smith, Renee A; Choat, Brendan; O'Grady, Anthony P; Tissue, David T

2014-07-01

It has been reported that elevated temperature accelerates the time-to-mortality in plants exposed to prolonged drought, while elevated [CO(2)] acts as a mitigating factor because it can reduce stomatal conductance and thereby reduce water loss. We examined the interactive effects of elevated [CO(2)] and temperature on the inter-dependent carbon and hydraulic characteristics associated with drought-induced mortality in Eucalyptus radiata seedlings grown in two [CO(2)] (400 and 640 μL L(-1)) and two temperature (ambient and ambient +4 °C) treatments. Seedlings were exposed to two controlled drying and rewatering cycles, and then water was withheld until plants died. The extent of xylem cavitation was assessed as loss of stem hydraulic conductivity. Elevated temperature triggered more rapid mortality than ambient temperature through hydraulic failure, and was associated with larger water use, increased drought sensitivities of gas exchange traits and earlier occurrence of xylem cavitation. Elevated [CO(2)] had a negligible effect on seedling response to drought, and did not ameliorate the negative effects of elevated temperature on drought. Our findings suggest that elevated temperature and consequent higher vapour pressure deficit, but not elevated [CO(2)], may be the primary contributors to drought-induced seedling mortality under future climates. © 2013 John Wiley & Sons Ltd.

Effect of annealing temperature on a single step processed Cu{sub 2}ZnSnS{sub 4} thin film via solution method

Energy Technology Data Exchange (ETDEWEB)

Prabeesh, P.; Selvam, I. Packia; Potty, S.N.

2016-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising material for thin film solar cell applications because of its excellent photovoltaic properties, high abundance and non-toxicity. Thin films of CZTS are generally fabricated by vacuum based techniques or by using toxic solvents and these routes reduce its attention as a low cost and environmental friendly material. In this study, we have prepared CZTS through a solution based single step approach using non-toxic chemicals by spin coating and studied the effect of annealing temperature in the range 350–550 °C in nitrogen atmosphere on structural, optical and electrical properties. XRD results revealed the formation of kesterite phase at all annealing temperatures, while the Raman studies indicated Cu{sub 2}SnS{sub 2} impurity phase in the film annealed at 550 °C. Band gap of the films annealed in nitrogen varies from 1.46 eV to 1.56 eV, depending on the annealing temperature. Optimum properties, such as, good crystallinity, dense structure, ideal band gap (1.49 eV) and good absorption coefficient (10{sup 4} cm{sup −1}), were obtained for the film annealed at 500 °C for 30 min in nitrogen. - Highlights: • Prepared CZTS film through one-step liquid based approach using non-toxic chemicals. • Studied the effect of N{sub 2} annealing on structural, optical and electrical properties. • The phase pure CZTS absorber film exhibited excellent photovoltaic properties • The film annealed at 500 °C for 30 min in nitrogen exhibited optimum properties.

Effect of low temperature annealing on magneto-caloric effect of Ni–Mn–Sn–Al ferromagnetic shape memory alloy

Energy Technology Data Exchange (ETDEWEB)

Agarwal, Sandeep [Haldia Institute of Technology, Haldia 721657, West Bengal (India); LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India); Stern-Taulats, Enric; Mañosa, Lluís [Departament d’Estructura i Constituents de la Matèria, Facultat de Física, Universitat de Barcelona, 08028 Barcelona, Catalonia (Spain); Mukhopadhyay, P.K., E-mail: pkm@bose.res.in [LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India)

2015-08-25

Highlights: • Magnetic properties of the system changed after secondary heat treatment. • MCE was enhanced after Al was partially replaced with Sn in Ni–Mn–Al system. • Suitable heat treatment further increased overall MCE in the sample. • Change in magnetic properties occurred due to change in atomic ordering. - Abstract: We studied the effect of low temperature annealing on the atomic ordering and consequent changes in the magnetization and magnetocaloric effect of the sample. The annealing at lower temperatures initially decreased the magnetization and magnetocaloric effect in the sample, but at higher annealing temperatures both increased. The changes in magnetization and magnetocaloric effect arise from the change in atomic ordering. We have shown that post quenching heat treatment offers easy way of optimizing the alloy for magnetocaloric effect. In order to verify that there was no overestimation in the measurement of magnetocaloric effect we also performed an infield calorimetric measurements and compared them with those from the magnetization measurements. We did not find remarkable difference between them.

Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

Directory of Open Access Journals (Sweden)

H. Abdullah

2013-01-01

Full Text Available CuInSe2 (CIS thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD for crystallinity and field-emission scanning electron microscopy (FESEM for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2 films with (1 1 1, (2 2 0/(2 0 4, and (3 1 2/(1 1 6 planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2 formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2 solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

Effect of annealing temperature on microstructure and superelastic properties of a Ti-18Zr-4.5Nb-3Sn-2Mo alloy.

Science.gov (United States)

Fu, Jie; Kim, Hee Young; Miyazaki, Shuichi

2017-01-01

In this study a new superelastic Ti-18Zr-4.5Nb-3Sn-2Mo alloy was prepared by adding 2at% of Mo as a substitute for Nb to the Ti-18Zr-11Nb-3Sn alloy, and heat treatment at different temperatures was conducted. The temperature dependence of superelasticity and annealing texture was investigated. Texture showed a dependence of annealing temperature: the specimen annealed at 923K for 0.3ks exhibited {113} β β type texture which was similar to the deformation texture, while specimens annealed at 973, 1073K, and 1173K showed {001} β β type recrystallization texture which was preferable for recovery strain. The largest recovery strain of 6.2%, which is the same level as that of the Ti-18Zr-11Nb-3Sn alloy, was obtained in the specimen annealed at 1173K for 0.3ks due to the well-developed {001} β β type recrystallization texture. The Ti-18Zr-3Nb-3Sn-2Mo alloy presented a higher tensile strength compared with the Ti-18Zr-11Nb-3Sn alloy when heat treated at 1173K for 0.3ks, which was due to the solid solution strengthening effect of Mo. Annealing at 923K for 0.3ks was effective in obtaining a good combination of a high strength as 865MPa and a large recovery strain as 5.6%. The high recovery strain was due to the high stress at which the maximum recovery stain was obtained which was attributed to the small grain size formed at low annealing temperature. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S.; Nagamuthu, S. [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

Shock Response of Commercial Purity Polycrystalline Magnesium Under Uniaxial Strain at Elevated Temperatures

Science.gov (United States)

Wang, Tianxue; Zuanetti, Bryan; Prakash, Vikas

2017-12-01

In the present paper, results of plate impact experiments designed to investigate the onset of incipient plasticity in commercial purity polycrystalline magnesium (99.9%) under weak uniaxial strain compression and elevated temperatures up to melt are presented. The dynamic stress at yield and post yield of magnesium, as inferred from the measured normal component of the particle velocity histories at the free (rear) surface of the target plate, are observed to decrease progressively with increasing test temperatures in the range from 23 to 500 °C. At (higher) test temperatures in the range 500-610 °C, the rate of decrease of dynamic stress with temperature at yield and post-yield in the sample is observed to weaken. At still higher test temperatures (617 and 630 °C), a dramatic increase in dynamic yield as well as flow stress is observed indicating a change in dominant mechanism of plastic deformation as the sample approaches the melt point of magnesium at strain rates of 105/s. In addition to these measurements at the wavefront, the plateau region of the free surface particle velocity profiles indicates that the longitudinal (plastic) impedance of the magnesium samples decreases continuously as the sample temperatures are increased from room to 610 °C, and then reverses trend (indicating increasing material longitudinal impedance/strength) as the sample temperatures are increased to 617 and 630 °C. Electron back scattered diffraction analysis of the as-received and annealed pre-test magnesium samples reveal grain coarsening as well as grain re-orientation to a different texture during the heating process of the samples.

Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

Science.gov (United States)

Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

2014-10-14

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

Annealing behavior of high permeability amorphous alloys

International Nuclear Information System (INIS)

Rabenberg, L.

1980-06-01

Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

Stress envelope of silicon carbide composites at elevated temperatures

International Nuclear Information System (INIS)

Nozawa, Takashi; Kim, Sunghun; Ozawa, Kazumi; Tanigawa, Hiroyasu

2014-01-01

To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case

Stress envelope of silicon carbide composites at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan); Kim, Sunghun [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Ozawa, Kazumi; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan)

2014-10-15

To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case.

Damage annealing in low temperature Fe/Mn implanted ZnO

Energy Technology Data Exchange (ETDEWEB)

Gunnlaugsson, H. P. [University of Aarhus, Department of Physics and Astronomy (Denmark); Bharuth-Ram, K., E-mail: kbr@tlabs.ac.za [Durban University of Technology, Physics Department (South Africa); Johnston, K. [PH Department, ISOLDE/CERN (Switzerland); Langouche, G. [University of Leuven, Instituut voor Kern-en Stralings fysika (Belgium); Mantovan, R. [Laboratorio MDM, IMM-CNR (Italy); Mølholt, T. E. [University of Iceland, Science Institute (Iceland); Naidoo, D. [University of the Witwatersrand, School of Physics (South Africa); Ólafsson, O. [University of Iceland, Science Institute (Iceland); Weyer, G. [University of Aarhus, Department of Physics and Astronomy (Denmark)

2015-04-15

{sup 57}Fe Emission Mössbauer spectra obtained after low fluence (<10{sup 12} cm {sup −2}) implantation of {sup 57}Mn (T{sub 1/2}= 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe {sup 2+} and Fe {sup 3+} on Zn sites, interstitial Fe and Fe in damage regions (Fe {sub D}). The Fe {sub D} component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10{sup 15} cm {sup −2}){sup 57}Fe/ {sup 57}Co implanted ZnO and {sup 57}Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT.

The effects of annealing temperature on the permittivity and electromagnetic attenuation performance of reduced graphene oxide

Science.gov (United States)

Wu, Fan; Zeng, Qiao; Xia, Yilu; Sun, Mengxiao; Xie, Aming

2018-05-01

Reduced graphene oxide (RGO) has been prepared through the thermal reduction method with different annealing temperatures to explore the effects of temperature on the permittivity and electromagnetic attenuation performance. The real and imaginary parts of permittivity increase along with the decrease in the oxygen functional group and the increase in the filler loading ratio. A composite only loaded with 1 wt. % of RGO can possess an effective electromagnetic absorption bandwidth of 7.60 GHz, when graphene oxide was reduced under 300 °C for 2 h. With the annealing temperature increased to 700 °C and the well reduced RGO loaded 7 wt. % in the composite, the electromagnetic interference shielding efficiency can get higher than 35 dB from 2 to 18 GHz. This study shows that controlling the oxygen functional groups on the RGO surface can also obtain an ideal electromagnetic attenuation performance without any other decorated nanomaterials.

HCF + LCF Interactions at Elevated Temperature

National Research Council Canada - National Science Library

Byrne, James; Hall, R. F; Ding, J

2005-01-01

...) crack propagation in Ti- 6Al-4V will be studied under combined HCF/low cycle fatigue (LCF) loading conditions at elevated temperatures up to 350 deg C where creep stress ratcheting and environmental effects may arise...

Annealing temperature dependent reversible wettability switching of micro/nano structured ZnO superhydrophobic surfaces

Science.gov (United States)

Velayi, Elmira; Norouzbeigi, Reza

2018-05-01

Superhydrophobic ZnO surfaces with reversibly tunable wettability were fabricated on stainless steel meshes via a facile chemical bath deposition method just by regulating the micro/nano structured ZnO needles without using chemical post modifications. The obtained surfaces can be easily and reversibly switched between superhydrophobic and superhydrophilic/underwater superoleophobic characteristics by altering the annealing temperatures. As-prepared sample exhibited long-term superhydrophobic properties with a water contact angle (WCA) of 163.8° ± 1.8° and contact angle hysteresis (CAH) of 1.1° ± 0.8°. The SEM, XRD, XPS and Raman analyses were employed to characterize the morphological features and surface chemistry of the prepared samples. SEM images showed the formation of ZnO micro/nanoneedles with a diameter of ∼90 nm on the substrate. The superhydrophobic ZnO surface was switched to highly hydrophilic and underwater superoleophobic properties with an oil contact angle (OCA) of about 172.5° after being annealed at 400 °C in air for 30 min and restored to superhydrophobic state again by altering the annealing temperature to 150 °C. Mechanical durability of the ZnO superhydrophobic surface was tested by an abrasion test. Results confirmed that the prepared surface exhibited an excellent robustness after 20 abrasion cycles under the pressure of 4.7 kPa.

Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

International Nuclear Information System (INIS)

Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

2015-01-01

Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

Directory of Open Access Journals (Sweden)

Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Analysis and evaluation system for elevated temperature design of pressure vessels

International Nuclear Information System (INIS)

Hayakawa, Teiji; Sayawaki, Masaaki; Nishitani, Masahiro; Mii, Tatsuo; Murasawa, Kanji

1977-01-01

In pressure vessel technology, intensive efforts have recently been made to develop the elevated temperature design methods. Much of the impetus of these efforts has been provided mainly by the results of the Liquid Metal Fast Breeder Reactor (LMFBR) and more recently, of the High Temperature Gas-cooled Reactor (HTGR) Programs. The pressure vessels and associated components in these new type nuclear power plants must operate for long periods at elevated temperature where creep effects are significant and then must be designed by rigorous analysis for high reliability and safety. To carry out such an elevated temperature designing, numbers of highly developed analysis and evaluation techniques, which are so complicated as to be impossible by manual work, are indispensable. Under these circumstances, the authors have made the following approaches in the study: (1) Study into basic concepts and the associated techniques in elevated temperature design. (2) Systematization (Analysis System) of the procedure for loads and stress analyses. (3) Development of post-processor, ''POST-1592'', for strength evaluation based on ASME Code Case 1592-7. By linking the POST-1592 together with the Analysis System, an analysis and evaluation system is developed for an elevated temperature design of pressure vessels. Consequently, designing of elevated temperature vessels by detailed analysis and evaluation has easily and effectively become feasible by applying this software system. (auth.)

Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

International Nuclear Information System (INIS)

Garcia-Torres, Jose; Valles, Elisa; Gomez, Elvira

2010-01-01

The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR(H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

The Effect of Elevated Temperature on Concrete Materials and Structures - a Literature Review.

Energy Technology Data Exchange (ETDEWEB)

Naus, Dan J [ORNL

2006-03-01

The objective of this limited study was to provide an overview of the effects of elevated temperature on the behavior of concrete materials and structures. In meeting this objective the effects of elevated temperatures on the properties of ordinary Portland cement concrete constituent materials and concretes are summarized. The effects of elevated temperature on high-strength concrete materials are noted and their performance compared to normal strength concretes. A review of concrete materials for elevated-temperature service is presented. Nuclear power plant and general civil engineering design codes are described. Design considerations and analytical techniques for evaluating the response of reinforced concrete structures to elevated-temperature conditions are presented. Pertinent studies in which reinforced concrete structural elements were subjected to elevated temperatures are described.

The Effect of Elevated Temperature on Concrete Materials and Structures - a Literature Review

International Nuclear Information System (INIS)

Naus, Dan J.

2006-01-01

The objective of this limited study was to provide an overview of the effects of elevated temperature on the behavior of concrete materials and structures. In meeting this objective the effects of elevated temperatures on the properties of ordinary Portland cement concrete constituent materials and concretes are summarized. The effects of elevated temperature on high-strength concrete materials are noted and their performance compared to normal strength concretes. A review of concrete materials for elevated-temperature service is presented. Nuclear power plant and general civil engineering design codes are described. Design considerations and analytical techniques for evaluating the response of reinforced concrete structures to elevated-temperature conditions are presented. Pertinent studies in which reinforced concrete structural elements were subjected to elevated temperatures are described.

A study on low temperature transformation ferrite in ultra low carbon IF steels (I) - effects of manganese and annealing conditions

International Nuclear Information System (INIS)

Jeong, Woo Chang; Lee, Jae Yeon; Jin, Young Sool

2001-01-01

An investigation was made to determine the effects of Mn content and annealing conditions on the formation of the low temperature transformation products in ultra low carbon interstitial free steels. With increasing the Mn content, yield and tensile strengths increased, but yield ratio decreased. The Mn was found to be effective to decrease the yield point elongation, causing continuous yielding in 3% Mn steel. Low temperature transformation ferrites such as quasi-polygonal ferrite, granular bainitic ferrite, and bainitic ferrite more easily formed with higher Mn content, higher annealing temperature, longer annealing time, and faster cooling rate. Polygonal ferrite grain was readily identified in the light microscope and was characterized by the polyhedral and equiaxed shape while quasi-polygonal ferrite showed the irregular changeful grain boundaries. It was found that both granular bainitic and bainitic ferrites revealed some etching evidence of substructures in the light microscope

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

International Nuclear Information System (INIS)

Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

2012-01-01

Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

International Nuclear Information System (INIS)

Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

2012-01-01

In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

Solution hardening and strain hardening at elevated temperatures

International Nuclear Information System (INIS)

Kocks, U.F.

1982-10-01

Solutes can significantly increase the rate of strain hardening; as a consequence, the saturation stress, at which strain hardening tends to cease for a given temperature and strain rate, is increased more than the yield stress: this is the major effect of solutes on strength at elevated temperatures, especially in the regime where dynamic strain-aging occurs. It is shown that local solute mobility can affect both the rate of dynamic recovery and the dislocation/dislocation interaction strength. The latter effect leads to multiplicative solution strengthening. It is explained by a new model based on repeated dislocation unlocking, in a high-temperature limit, which also rationalizes the stress dependence of static and dynamic strain-aging, and may help explain the plateau of the yield stress at elevated temperatures. 15 figures

Correlation between stoichiometry and surface structure of the polar MgAl2O4(100) surface as a function of annealing temperature

DEFF Research Database (Denmark)

Jensen, Thomas Nørregaard; Rasmussen, Morten Karstoft; Knudsen, Jan

2015-01-01

is found to significantly increase as the surface is sputtered and annealed in oxygen at intermediate temperatures ranging from 800-1000 [degree]C. The Al excess is explained by the observed surface structure, where the formation of nanometer sized pits and elongated patches with Al terminated step edges....... The excess of Al and high concentration of octahedral vacancies, very interestingly means, that the top few surface layers of the MgAl2O4(100) adopts a surface structure similar to that of a spinel-like transition Al2O3 film. However, after annealing at a high temperature of 1200 [degree]C, the Al/Mg ratio...... are filled by Mg from the bulk, due to the increased mobility at high annealing temperatures....

ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

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Peter Pikna

2014-10-01

Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

Effect of Annealing Temperature on Microstructure and Mechanical Properties of Hot-Dip Galvanizing DP600 Steel

Science.gov (United States)

Hai-yan, Sun; Zhi-li, Liu; Yang, Xu; Jian-qiang, Shi; Lian-xuan, Wang

Hot-dip galvanizing dual phase steel DP600 steel grade with low Si was produced by steel plant and experiments by simulating galvanizing thermal history. The microstructure was observed and analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effect of different annealing temperatures on the microstructure and mechanical properties of dual-phase steel was also discussed. The experimental results show that the dual-phase steel possesses excellent strength and elongation that match EN10346 600MPa standards. The microstructure is ferrite and martensite. TEM micrograph shows that white ferrite with black martensite islands inlay with a diameter of around 1um and the content of 14 18%. The volume will expand and phase changing take the form of shear transformation when ferrite converted to martensite. So there are high density dislocations in ferrite crystalline grain near martensite. The martensite content growing will be obvious along with annealing temperature going up. But the tendency will be weak when temperature high.

CrCuAgN PVD nanocomposite coatings: Effects of annealing on coating morphology and nanostructure

Energy Technology Data Exchange (ETDEWEB)

Liu, Xingguang, E-mail: xingguangliu1@gmail.com [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Iamvasant, Chanon, E-mail: ciamvasant1@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Liu, Chang, E-mail: chang.liu@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Matthews, Allan, E-mail: allan.matthews@manchester.ac.uk [Pariser Building - B24 ICAM, School of Materials, The University of Manchester, Manchester, M13 9PL (United Kingdom); Leyland, Adrian, E-mail: a.leyland@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

2017-01-15

Highlights: • Coatings with nitrogen content up to 16 at.% exhibit a metallic Cr solid solution, even after post-coat annealing at 300 °C and 500 °C. • At higher N/Cr atomic ratios (approaching Cr{sub 2}N stoichiometry), chromium was still inclined to exist in solid solution with nitrogen, rather than as a ceramic nitride phase, even after annealing at 500 °C. • Transportation of Cu and Ag to the surface depends on annealing temperature, annealing duration, nitrogen concentration and ‘global’ Cu + Ag concentration. • Incorporation of copper appears to be a powerful strategy to enhance Ag mobility at low concentration (∼3 at.% Ag in this study) under moderately high service temperature. • A significant decrease in friction coefficient was obtained at room temperature after annealing, or during sliding wear testing at elevated temperature. - Abstract: CrCuAgN PVD nanocomposite coatings were produced using pulsed DC unbalanced magnetron sputtering. This investigation focuses on the effects of post-coat annealing on the surface morphology, phase composition and nanostructure of such coatings. In coatings with nitrogen contents up to 16 at.%, chromium exists as metallic Cr with N in supersaturated solid solution, even after 300 °C and 500 °C post-coat annealing. Annealing at 300 °C did not obviously change the phase composition of both nitrogen-free and nitrogen-containing coatings; however, 500 °C annealing resulted in significant transformation of the nitrogen-containing coatings. The formation of Ag aggregates relates to the (Cu + Ag)/Cr atomic ratio (threshold around 0.2), whereas the formation of Cu aggregates relates to the (Cu + Ag + N)/Cr atomic ratio (threshold around 0.5). The primary annealing-induced changes were reduced solubility of Cu, Ag and N in Cr, and the composition altering from a mixed ultra-fine nanocrystalline and partly amorphous phase constitution to a coarser, but still largely nanocrystalline structure. It was also

Corrosion resistance of duplex stainless steel subjected to long-term annealing in the spinodal decomposition temperature range

Energy Technology Data Exchange (ETDEWEB)

Lo, K.H., E-mail: KHLO@umac.mo [Department of Electromechanical Engineering, University of Macau, Macau (China); Kwok, C.T.; Chan, W.K.; Zeng, D. [Department of Electromechanical Engineering, University of Macau, Macau (China)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Long-term DLEPR data on duplex stainless steel. Black-Right-Pointing-Pointer Spinodal decomposition remains unabated even after 15,000 h of annealing. Black-Right-Pointing-Pointer Effect of long-term annealing on healing has been investigated. - Abstract: The effect of thermal annealing up to 15,000 h between 300 Degree-Sign C and 500 Degree-Sign C on the corrosion resistance of the duplex stainless steel (DSS) 7MoPLUS has been investigated by using the DLEPR test. Spinodal decomposition in 7MoPLUS is unabated even after annealing for 15,000 h and no healing has been observed. The possible healing mechanisms in this temperature range (back diffusion of Cr atoms from the Cr-rich ferrite ({alpha}{sub Cr}) and diffusion of Cr atoms from the austenite) and its absence in the present steel have been discussed.

He+ irradiation temperature influence on the structure and nanohardness of hydrocarbon films

International Nuclear Information System (INIS)

Fan, Hongyu; Yang, Deming; Sun, Li; Yang, Qi; Niu, Jinhai; Guo, Liping; Chen, Jihong; Bi, Zhenhua; Liu, Dongping

2013-01-01

Polymer-like hydrocarbon films were irradiated with 100 keV He + or annealed at sample temperatures varying from 25 to 600 °C. The effects of sample temperature on the structure and nanohardness of hydrocarbon films are investigated by atomic force microscopy (AFM), AFM-based nanoindentation, Fourier transform infrared spectroscopy, and Raman spectroscopy. Analysis shows that annealing results in the decrease in the nanohardness of hydrocarbon films from 4.0 GPa to 0.55 GPa while He + irradiation at an elevated sample temperature results in the formation of dense diamond-like carbon films with nanohardness up to 20.0 GPa. This indicates that polymer-like hydrocarbon films can be transformed into the hard diamond-like carbon films with a relatively low H content on vacuum vessels of fusion devices due to the energetic bombardments at an elevated wall temperature

Experiment and calculation of reinforced concrete at elevated temperatures

CERN Document Server

Guo, Zhenhai

2011-01-01

Concrete as a construction material goes through both physical and chemical changes under extreme elevated temperatures. As one of the most widely used building materials, it is important that both engineers and architects are able to understand and predict its behavior in under extreme heat conditions. Brief and readable, this book provides the tools and techniques to properly analysis the effects of high temperature of reinforced concrete which will lead to more stable, safer structures. Based on years of the author's research, Reinforced Concrete at Elevated Temperatures four par

Effect of Mn Content and Solution Annealing Temperature on the Corrosion Resistance of Stainless Steel Alloys

Directory of Open Access Journals (Sweden)

Ihsan-ul-Haq Toor

2014-01-01

Full Text Available The corrosion behavior of two specially designed austenitic stainless steels (SSs having different Nickel (Ni and Manganese (Mn contents was investigated. Prior to electrochemical tests, SS alloys were solution-annealed at two different temperatures, that is, at 1030°C for 2 h and 1050°C for 0.5 h. Potentiodynamic polarization (PD tests were carried out in chloride and acidic chloride, whereas linear polarization resistance (LPR and electrochemical impedance spectroscopy (EIS was performed in 0.5 M NaCl solution at room temperature. SEM/EDS investigations were carried out to study the microstructure and types of inclusions present in these alloys. Experimental results suggested that the alloy with highest Ni content and annealed at 1050°C/0.5 hr has the highest corrosion resistance.

The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells.

Science.gov (United States)

Qiu, Xiaofeng; Chen, Ling; Gong, Haibo; Zhu, Min; Han, Jun; Zi, Min; Yang, Xiaopeng; Ji, Changjian; Cao, Bingqiang

2014-09-15

Arrays of ZnO/CdS/CdSe core/shell nanocables with different annealing temperatures have been investigated for CdS/CdSe quantum dots sensitized solar cells (QDSSCs). CdS/CdSe quantum dots were synthesized on the surface of ZnO nanorods that serve as the scaffold via a simple ion-exchange approach. The uniform microstructure was verified by scanning electron microscope and transmission electron microscope. UV-Visible absorption spectrum and Raman spectroscopy analysis indicated noticeable influence of annealing temperature on the interface structural and optical properties of the CdS/CdSe layers. Particularly, the relationship between annealing temperatures and photovoltaic performance of the corresponding QDSSCs was investigated employing photovoltaic conversion, quantum efficiency and electrochemical impedance spectra. It is demonstrated that higher cell efficiency can be obtained by optimizing the annealing temperature through extending the photoresponse range and improving QD layer crystal quality. Copyright © 2014 Elsevier Inc. All rights reserved.

Elevated temperature mechanical properties of line pipe steels

Science.gov (United States)

Jacobs, Taylor Roth

The effects of test temperature on the tensile properties of four line pipe steels were evaluated. The four materials include a ferrite-pearlite line pipe steel with a yield strength specification of 359 MPa (52 ksi) and three 485 MPa (70 ksi) yield strength acicular ferrite line pipe steels. Deformation behavior, ductility, strength, strain hardening rate, strain rate sensitivity, and fracture behavior were characterized at room temperature and in the temperature range of 200--350 °C, the potential operating range for steels used in oil production by the steam assisted gravity drainage process. Elevated temperature tensile testing was conducted on commercially produced as-received plates at engineering strain rates of 1.67 x 10 -4, 8.33 x 10-4, and 1.67 x 10-3 s-1. The acicular ferrite (X70) line pipe steels were also tested at elevated temperatures after aging at 200, 275, and 350 °C for 100 h under a tensile load of 419 MPa. The presence of serrated yielding depended on temperature and strain rate, and the upper bound of the temperature range where serrated yielding was observed was independent of microstructure between the ferrite-pearlite (X52) steel and the X70 steels. Serrated yielding was observed at intermediate temperatures and continuous plastic deformation was observed at room temperature and high temperatures. All steels exhibited a minimum in ductility as a function of temperature at testing conditions where serrated yielding was observed. At the higher temperatures (>275 °C) the X52 steel exhibited an increase in ductility with an increase in temperature and the X70 steels exhibited a maximum in ductility as a function of temperature. All steels exhibited a maximum in flow strength and average strain hardening rate as a function of temperature. The X52 steel exhibited maxima in flow strength and average strain hardening rate at lower temperatures than observed for the X70 steels. For all steels, the temperature where the maximum in both flow

Principal and secondary luminescence lifetime components in annealed natural quartz

International Nuclear Information System (INIS)

Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

2008-01-01

Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

Science.gov (United States)

Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

2015-02-01

The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

International Nuclear Information System (INIS)

Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Mustafa, M. K.

2015-01-01

The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ∼ 0.26× 10 11 cm −2 ) and dome-shape morphologies with relatively high density ∼ 0.92 × 10 11 cm −2 , respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ∼ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO 2 or GeO x and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge–Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. (paper)

Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Muaz, A. K. M.; Hashim, U., E-mail: uda@unimap.edu.my; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L. [Institute of Nano Electronic Engineering, Univerisiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia)

2016-07-06

In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

Effect of the Annealing Temperature on the Structure and Magnetic Properties of 2% Si Steel

Directory of Open Access Journals (Sweden)

Cunha Marco A. da

2002-01-01

Full Text Available To study the effect of the annealing temperature on the structure and magnetic properties of a 2%Si non-oriented steel cold rolled samples were submitted to final annealing in the temperature range of 540 °C to 980 °C in hydrogen atmosphere. The samples had received cold rolling reduction of 75% to a final thickness of 0.50 mm. Recovery and recrystallization resulted in significant improvement of magnetic properties, with decrease of iron loss (W1.5 and increase of polarisation (J50 and relative permeability (µ1.5. On further grain growth, after recrystallization, there was simultaneous decrease of iron loss, polarisation and relative permeability. Texture evolution on grain growth accounts for the observed decrease of J50 and µ1.5. The beneficial effect of increasing grain size on core loss overcomes the detrimental effect of texture resulting in decrease of W1.5.

Effects of carbon nanotube content and annealing temperature on the hardness of CNT reinforced aluminum nanocomposites processed by the high pressure torsion technique

Energy Technology Data Exchange (ETDEWEB)

Phuong, Doan Dinh, E-mail: phuongdd@ims.vast.ac.vn [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Str., Cau Giay Distr., Hanoi (Viet Nam); Trinh, Pham Van; An, Nguyen Van; Luan, Nguyen Van; Minh, Phan Ngoc [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Str., Cau Giay Distr., Hanoi (Viet Nam); Khisamov, Rinat Kh.; Nazarov, Konstantin S.; Zubairov, Linar R.; Mulyukov, Radik R.; Nazarov, Ayrat A. [Institute for Metals Superplasticity Problems, Russian Academy of Sciences 39, Stepan Khalturin Str., Ufa 450001 (Russian Federation)

2014-11-15

Highlights: • CNT/Al nanocomposites were consolidated by HIP and subsequently processed by the high pressure torsion technique. • High pressure torsion processing was unable to break apart or disperse the CNT agglomerates persisted in powder preparation. • HPT-processed CNT/Al nanocomposites exhibited secondary hardening during annealing at temperatures below 150 °C. - Abstract: In this paper, the microstructure and hardness of CNT reinforced aluminium (CNT/Al) nanocomposites prepared by the advanced powder metallurgy method and subsequently processed by the high pressure torsion (HPT) technique are studied. The effects of CNT content and annealing temperature on the hardness of the nanocomposites are investigated. The results show that annealing materials at temperatures below 150 °C leads to secondary hardening, while annealing at higher temperatures soften the nanocomposites. HPT-processed CNT/Al nanocomposites with 1.5 wt.% of CNTs are shown to have the highest hardness in comparison with other composites containing CNTs from 0 up to 2 wt.%. Microstructures, CNT distribution and the phase composition of CNT/Al nanocomposites are investigated by transmission and scanning electron microscopy and X-ray diffraction techniques.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

Energy Technology Data Exchange (ETDEWEB)

Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-05-15

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

Adequacy of annealing duration in reducing the background counts of personnel monitoring TLD cards - a study

International Nuclear Information System (INIS)

Srivastava, Kshama; Varadharajan, Geetha; Punekar, M.P.; Chougaokar, M.P.; Ayappan, P.

2010-01-01

In India, the personnel monitoring service of ∼ 70,000 radiation workers is being provided using indigenously developed TLD system comprising three CaSO 4 :Dy embedded Teflon discs. In order to remove TL and reset the distribution of defects/trapping centres, all TLD cards are subjected to an annealing treatment at elevated temperature prior to their next use. As per the standardized protocol annealing is carried out in a hot air circulating oven at 230 deg C for 4 hr, which is sufficient to reset the TL dosemeters for dose levels upto 100 mSv. In order to verify the appropriateness of annealing procedures adopted by the Laboratory, a detailed study was conducted using four sets of cards namely A, B, C and D series, exposed to various dose levels

Structural properties of WO{sub 3} dependent of the annealing temperature deposited by hot-filament metal oxide deposition

Energy Technology Data Exchange (ETDEWEB)

Flores M, J. E. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica, Av. San Claudio y 18 Sur, Ciudad Universitaria, Col. Jardines de San Manuel, 72570 Puebla (Mexico); Diaz R, J. [IPN, Centro de Investigacion en Biotecnologia Aplicada, Ex-Hacienda de San Molino Km 1.5 Tepetitla, 90700 Tlaxcala (Mexico); Balderas L, J. A., E-mail: eflores@ece.buap.mx [IPN, Unidad Profesional Interdisciplinaria de Biotecnologia, Av. Acueducto s/n, Col. Barrio la Laguna, 07340 Mexico D. F. (Mexico)

2012-07-01

In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO{sub 3} that has been grown by hot-filament metal oxide deposition. The chemical stoichiometry was determined by X-ray photoelectron spectroscopy. By X-ray diffraction obtained that the as-deposited WO{sub 3} films present mainly monoclinic crystalline phase. WO{sub 3} optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO{sub 3} from 100 to 500 C. The Raman spectrum of the as-deposited WO{sub 3} film shows four intense peaks that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching ({upsilon}) and W-O bending ({delta}) modes, respectively, which enhanced and increased their intensity with the annealing temperature. (Author)

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

2015-02-02

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

Interactive effect of elevated CO2 and temperature on coral physiology

Science.gov (United States)

Grottoli, A. G.; Cai, W.; Warner, M.; Melman, T.; Schoepf, V.; Baumann, J.; Matsui, Y.; Pettay, D. T.; Hoadley, K.; Xu, H.; Wang, Y.; Li, Q.; Hu, X.

2011-12-01

Increases in ocean acidification and temperature threaten coral reefs globally. However, the interactive effect of both lower pH and higher temperature on coral physiology and growth are poorly understood. Here, we present preliminary findings from a replicated controlled experiment where four species of corals (Acorpora millepora, Pocillopora damicornis, Montipora monasteriata, Turbinaria reniformis) were reared under the following six treatments for three weeks: 1) 400ppm CO2 and ambient temperature, 2) 400ppm CO2 and elevated temperature, 3) 650ppm CO2 and ambient temperature, 4) 650ppm CO2 and elevated temperature, 5) 800ppm CO2 and ambient temperature, 6) 800ppm CO2 and elevated temperature. Initial findings of photophysiological health (Fv/Fm), calcification rates (as measured by both buoyant weight and the total alkalinity methods), and energy reserves will be presented.

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Directory of Open Access Journals (Sweden)

Jian Gao

2018-01-01

Full Text Available In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM ultraviolet photodetectors (UV PDs. The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magnitude; however, it also decreased the photo-current of the UV PD by one order of magnitude. The former could be related to the reduction of oxygen vacancies and the crystallization enhancement of the ZnO film; the latter should be attributed to the reduction of defects in the ZnO film, thus resulting in a smaller decrease in thermionic-field emission tunneling barrier because of reduced holes trapped near the interface. For the post-annealing at 250 oC for 30 min, the dark-current was equal to 5.16×10-11 A, and the ultraviolet-visible rejection ratio approached 1.4×106, and the responsivity was as high as 1.78×103 A/W at 5V. Further, prolonging annealing time at a lower temperature (200 oC also could greatly improve the performance of the UV PD, i.e., 90 min annealing produced a quite large responsivity of 1.30×104 A/W at 5 V while maintaining a very low dark-current (1.42×10-10 A and a large ultraviolet-visible rejection ratio (4.06×105.

Influence of high temperature annealing on the structure, hardness and tribological properties of diamond-like carbon and TiAlSiCN nanocomposite coatings

International Nuclear Information System (INIS)

Xie, Z.W.; Wang, L.P.; Wang, X.F.; Huang, L.; Lu, Y.; Yan, J.C.

2011-01-01

Diamond-like carbon (DLC) and TiAlSiCN nanocomposite coatings were synthesized and annealed at different temperatures in a vacuum environment. The microstructure, hardness and tribological properties of as-deposited and annealed DLC-TiAlSiCN nanocomposite coatings were characterized by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Raman spectroscopy, nano-indentation and friction tests. The TEM results reveal that the as-deposited DLC-TiAlSiCN coating has a unique nanocomposite structure consisting of TiCN nanocrystals embedded in an amorphous matrix consisting of a-Si 3 N 4 , a-SiC, a-CN and DLC, and the structure changed little after annealing at 800 °C. However, XPS and Raman results show that an obvious graphitization of the DLC phase occurred during the annealing process and it worsened with annealing temperature. Because of the graphitization, the hardness of the DLC-TiAlSiCN coating after annealing at 800 °C decreased from 45 to 36 GPa. In addition, the DLC-TiAlSiCN coating after annealing at 800 °C has a similar friction coefficient to the as-deposited coating.

Laser-annealed GaP OHMIC contacts for high-temperature devices

International Nuclear Information System (INIS)

Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

1980-01-01

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Temperature elevation in the fetus from electromagnetic exposure during magnetic resonance imaging

International Nuclear Information System (INIS)

Kikuchi, Satoru; Ito, Koichi; Saito, Kazuyuki; Takahashi, Masaharu

2010-01-01

This study computationally assessed the temperature elevations due to electromagnetic wave energy deposition during magnetic resonance imaging in non-pregnant and pregnant woman models. We used a thermal model with thermoregulatory response of the human body for our calculations. We also considered the effect of blood temperature variation on body core temperature. In a thermal equilibrium state, the temperature elevations in the intrinsic tissues of the woman and fetal tissues were 0.85 and 0.61 deg. C, respectively, at a whole-body averaged specific absorption rate of 2.0 W kg -1 , which is the restriction value of the International Electrotechnical Commission for the normal operating mode. As predicted, these values are below the temperature elevation of 1.5 deg. C that is expected to be teratogenic. However, these values exceeded the recommended temperature elevation limit of 0.5 deg. C by the International Commission on Non-Ionizing Radiation Protection. We also assessed the irradiation time required for a temperature elevation of 0.5 deg. C at the aforementioned specific absorption rate. As a result, the calculated irradiation time was 40 min.

Influence of Step Annealing Temperature on the Microstructure and Pitting Corrosion Resistance of SDSS UNS S32760 Welds

Science.gov (United States)

Yousefieh, M.; Shamanian, M.; Saatchi, A.

2011-12-01

In the present work, the influence of step annealing heat treatment on the microstructure and pitting corrosion resistance of super duplex stainless steel UNS S32760 welds have been investigated. The pitting corrosion resistance in chloride solution was evaluated by potentiostatic measurements. The results showed that step annealing treatments in the temperature ranging from 550 to 1000 °C resulted in a precipitation of sigma phase and Cr2N along the ferrite/austenite and ferrite/ferrite boundaries. At this temperature range, the metastable pits mainly nucleated around the precipitates formed in the grain boundary and ferrite phase. Above 1050 °C, the microstructure contains only austenite and ferrite phases. At this condition, the critical pitting temperature of samples successfully arrived to the highest value obtained in this study.

Upshot of Elevated Temperature on Performance Facet of Fly Ash ...

African Journals Online (AJOL)

This study investigates the effects of elevated temperature variation on the compressive strength of Fly Ash/Ordinary Portland Cement (OPC) Laterized concrete ... and 10% Fly ash content at 2500C. This is an indication that the strength of Fly ash/OPC Laterized concrete is generally sufficient for use at elevated temperature ...

Annealing of KDP crystals in vacuum and under pressure

International Nuclear Information System (INIS)

Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

1997-01-01

The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment

Science.gov (United States)

Jallorina, Michael Paul A.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Ishikawa, Yasuaki; Uraoka, Yukiharu

2018-05-01

Transparent amorphous oxide semiconducting materials such as amorphous InGaZnO used in thin film transistors (TFTs) are typically annealed at temperatures higher than 250 °C to remove any defects present and improve the electrical characteristics of the device. Previous research has shown that low cost and low temperature methods improve the electrical characteristics of the TFT. With the aid of surface and bulk characterization techniques in comparison to the device characteristics, this work aims to elucidate further on the improvement mechanisms of wet and dry annealing ambients that affect the electrical characteristics of the device. Secondary Ion Mass Spectrometry results show that despite outward diffusion of -H and -OH species, humid annealing ambients counteract outward diffusion of these species, leading to defect sites which can be passivated by the wet ambient. X-ray Photoelectron Spectroscopy results show that for devices annealed for only 30 min in a wet annealing environment, the concentration of metal-oxide bonds increased by as much as 21.8% and defects such as oxygen vacancies were reduced by as much as 18.2% compared to an unannealed device. Our work shows that due to the oxidizing power of water vapor, defects are reduced, and overall electrical characteristics are improved as evidenced with the 150 °C wet O2, 30 min annealed sample which exhibited the highest mobility of 5.00 cm2/V s, compared to 2.36 cm2/V s for a sample that was annealed at 150 °C in a dry ambient atmospheric environment for 2 h.

The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

International Nuclear Information System (INIS)

Pagonis, Vasilis

1998-01-01

Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

Annealing effects on electron-beam evaporated Al2O3 films

International Nuclear Information System (INIS)

Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

2005-01-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

Annealing effects on electron-beam evaporated Al 2O 3 films

Science.gov (United States)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

Directory of Open Access Journals (Sweden)

Pejović Momčilo M.

2011-01-01

Full Text Available Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.

Electron spin resonance in neutron-irradiated graphite. Dependence on temperature and effect of annealing; Resonance paramagnetique du graphite irradie aux neutrons. Variation en fonction de la temperature et experiences de recuit

Energy Technology Data Exchange (ETDEWEB)

Kester, T [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires, Laboratoire de resonance magnetique

1967-09-01

The temperature dependence of the electron spin resonance signal from neutron irradiated graphite has been studied. The results lead to an interpretation of the nature of the paramagnetic centers created by irradiation. In annealing experiments on graphite samples, which had been irradiated at low temperature, two annealing peaks and one anti-annealing peak were found. Interpretations are proposed for these peaks. (author) [French] Le graphite irradie aux neutrons a ete etudie par resonance paramagnetique electronique en fonction de la temperature. La nature des centres paramagnetiques crees par irradiation est interpretee a l'aide des resultats. Des experiences de recuit sur des echantillons de graphite irradie a 77 deg. K ont permis de mettre en evidence deux pics de recuit et un pic d'anti-recuit, pour lesquels des interpretations sont proposees. (auteur)

He{sup +} irradiation temperature influence on the structure and nanohardness of hydrocarbon films

Energy Technology Data Exchange (ETDEWEB)

Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Yang, Deming [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Sun, Li [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics, Liaoning Normal University, Dalian 116023 (China); Yang, Qi; Niu, Jinhai [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Guo, Liping; Chen, Jihong [Accelerator Laboratory, School of Physics, Wuhan University, Wuhan 430072 (China); Bi, Zhenhua [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Liu, Dongping, E-mail: dongping.liu@dlnu.edu.cn [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electronic Science, Aeronautics, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

2013-09-15

Polymer-like hydrocarbon films were irradiated with 100 keV He{sup +} or annealed at sample temperatures varying from 25 to 600 °C. The effects of sample temperature on the structure and nanohardness of hydrocarbon films are investigated by atomic force microscopy (AFM), AFM-based nanoindentation, Fourier transform infrared spectroscopy, and Raman spectroscopy. Analysis shows that annealing results in the decrease in the nanohardness of hydrocarbon films from 4.0 GPa to 0.55 GPa while He{sup +} irradiation at an elevated sample temperature results in the formation of dense diamond-like carbon films with nanohardness up to 20.0 GPa. This indicates that polymer-like hydrocarbon films can be transformed into the hard diamond-like carbon films with a relatively low H content on vacuum vessels of fusion devices due to the energetic bombardments at an elevated wall temperature.

Annealing effect on restoration of irradiation steel properties

International Nuclear Information System (INIS)

Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

1986-01-01

The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Liu, H. F.; Chua, S. J.; Xiang, N.

2007-01-01

The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 degree sign C results in a texture that consists of (100)Al[010](parallel sign)(100)GaAs[011] and (100)Al[010](parallel sign)(100)GaAs[010] rotated 45 degree sign with respect to each other, while the growth at 300 degree sign C leads to a mixture phase of (100)Al[010](parallel sign)(100)GaAs[011] and (110)Al[001](parallel sign)(100)GaAs[011]. In situ annealing of the Al film grown at 300 degree sign C causes a reorientation of the crystalline from (100)Al[010](parallel sign)(100)GaAs[011] to (110)Al[001](parallel sign)(100)GaAs[011]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence

The effect of annealing temperature on the properties of powder metallurgy processed Ti-35Nb-2Zr-0.5O alloy.

Science.gov (United States)

Málek, Jaroslav; Hnilica, František; Veselý, Jaroslav; Smola, Bohumil; Medlín, Rostislav

2017-11-01

Ti-35Nb-2Zr-0.5O (wt%) alloy was prepared via a powder metallurgy process (cold isostatic pressing of blended elemental powders and subsequent sintering) with the primary aim of using it as a material for bio-applications. Sintered specimens were swaged and subsequently the influence of annealing temperature on the mechanical and structural properties was studied. Specimens were annealed at 800, 850, 900, 950, and 1000°C for 0.5h and water quenched. Significant changes in microstructure (i.e. precipitate dissolution or grain coarsening) were observed in relation to increasing annealing temperature. In correlation with those changes, the mechanical properties were also studied. The ultimate tensile strength increased from 925MPa (specimen annealed at 800°C) to 990MPa (900°C). Also the elongation increased from ~ 13% (800°C) to more than 20% (900, 950, and 1000°C). Copyright © 2017 Elsevier Ltd. All rights reserved.

Mechanical and microstructural evolution of Hi-Nicalon Trade Mark SiC fibers annealed in O2-H2O-Ar atmospheres

International Nuclear Information System (INIS)

Li Siwei; Feng Zude; Mei Hui; Zhang Litong

2008-01-01

Hi-Nicalon fibers were exposed in 8% O 2 /78% Ar/14% H 2 O atmosphere for 1 h at 1300, 1400, 1500, 1600 deg. C, respectively. Residual tensile strength was evaluated by tensile test, phases in the fibers were identified using an X-ray diffractometer (XRD), morphology of the fracture surfaces and microstructure was observed by scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. Results indicated that residual tensile strength increased with increasing temperature from 1300 to 1500 deg. C, then decreased after annealing in 1600 deg. C. The grain size of β-SiC and the amount of the stacking faults increased under the elevated temperature as well. After annealing, a passive film with a structure of α-cristobalite crystals dispersed in amorphous SiO 2 phase formed on the fiber surface, the thickness of the film increased with the annealing temperature from 1300 to 1500 deg. C, after annealing in 1600 deg. C, fractional silica film spalled. Finally, relationship between the structural changes and the mechanical properties, the control effect of water vapor on formation and structural evolution of the passive film were discussed

The influence of annealing atmosphere on the material properties of sol-gel derived SnO2:Sb films before and after annealing

International Nuclear Information System (INIS)

Jeng, Jiann-Shing

2012-01-01

SnO 2 films with and without Sb doping were prepared by the sol-gel spin-coating method. Material properties of the SnO 2 films with different Sb contents were investigated before and after annealing under O 2 or N 2 . When SnO 2 films are annealed under N 2 or O 2 , the resistivity decreases with increasing annealing temperature, which may be related to the increased crystallinity and reduced film defects. The intensity of SnO 2 peaks for both O 2 - and N 2 -annealed films increases as the annealing temperature increases. Small nodules are revealed on the surface of SnO 2 films after annealing in N 2 or O 2 atmospheres, and some voids are present on the surface of N 2 -annealed SnO 2 films. After doping with Sb, the resistivity of SnO 2 films after annealing in O 2 is greater than that of N 2 -annealed SnO 2 films. The surface morphology of SnO 2 films incorporating different molar ratios of Sb after annealing are similar to that of as-spun SnO 2 films with adding Sb. There were no voids found on the surfaces of N 2 -annealed SnO 2 :Sb films. In addition, the peak intensity of SnO 2 :Sb films after O 2 -annealing is higher than those films after N 2 -annealing. The chemical binding states and Hall mobility of the high-temperature annealed SnO 2 films without and with adding Sb are also related to the annealing atmospheres. This study discusses the connection among the material properties of the SnO 2 films with different Sb contents and how these properties are influenced by the Sb-doping concentration and the annealing atmospheres of SnO 2 films.

Mechanical properties and annealing texture of zirconium sheets

International Nuclear Information System (INIS)

Hanif-ur-Rehman; Khawaja, F.A.

1996-01-01

Mechanical properties like yield strength (YS), ultimate tensile strength(UTS), percentage elongation and annealing texture has been studied in sheets of commercially pure zirconium. The YS and UTS decrease as a function of annealing temperature up to 600 V, but both quantities have maximum value in sample annealed at 800 deg. C. The percentage elongation decreased with increase in annealing temperature up to 600 deg. C. A slight decrease and minimum value of percentage elongation was observed at 650 and 800 C respectively. The texture development in the annealed samples has been studied by the X-ray diffraction method. The sampled annealed at 800 deg. C showed a texture component (0001) [01 bar 10] with orientation density of about 8 times random, while the samples annealed at 600,650 and 700 deg. C showed a texture component (0001)[2 bar 110] with orientation density of about 5 times random. Thus it is concluded, that the texture component (0001)[2 bar 110] and (0001)[01 bar 10] at 650 and 800 geg. C respectively, may be the responsible for the increase in YS and UTS and decrease in percentage elongation at these temperatures. (author)

Effect of high temperature annealing on the grain size of CVD-grown SiC and experimental PBMR TRISO coated particles

CSIR Research Space (South Africa)

Mokoduwe, SM

2010-10-01

Full Text Available in the PBMR fuel SiC layer. square samples were cut from the original sample received from ORNL and prepared for grain size Prague, Czech Republic, October 18 – 2000 °C. These no significant ion of how the 8] also ge is also of tal THODS -Si... for grain size determination Fig. 5: Influence of high temperature annealing on the CVD ORNL polycrystalline 3 C-SiC. Fig. 6: Influence of high temperature annealing on the polycrystalline 3 C-SiC layer of PBMR TRISO CP batches D and E...

MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

Energy Technology Data Exchange (ETDEWEB)

Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

2012-09-20

Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

Science.gov (United States)

Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

2017-05-01

As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

Temperature elevation in the fetus from electromagnetic exposure during magnetic resonance imaging

Energy Technology Data Exchange (ETDEWEB)

Kikuchi, Satoru; Ito, Koichi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Saito, Kazuyuki; Takahashi, Masaharu [Research Center for Frontier Medical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)], E-mail: kikuchi@graduate.chiba-u.jp

2010-04-21

This study computationally assessed the temperature elevations due to electromagnetic wave energy deposition during magnetic resonance imaging in non-pregnant and pregnant woman models. We used a thermal model with thermoregulatory response of the human body for our calculations. We also considered the effect of blood temperature variation on body core temperature. In a thermal equilibrium state, the temperature elevations in the intrinsic tissues of the woman and fetal tissues were 0.85 and 0.61 deg. C, respectively, at a whole-body averaged specific absorption rate of 2.0 W kg{sup -1}, which is the restriction value of the International Electrotechnical Commission for the normal operating mode. As predicted, these values are below the temperature elevation of 1.5 deg. C that is expected to be teratogenic. However, these values exceeded the recommended temperature elevation limit of 0.5 deg. C by the International Commission on Non-Ionizing Radiation Protection. We also assessed the irradiation time required for a temperature elevation of 0.5 deg. C at the aforementioned specific absorption rate. As a result, the calculated irradiation time was 40 min.

Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

International Nuclear Information System (INIS)

Zheng Tianhang; Li Ziquan; Chen Jiankang; Shen Kai; Sun Kefei

2006-01-01

The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn 2 GeO 4 has been formed with (220) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761nm, which originate from the transition between oxygen vacancy (V o * ) and Zn vacancies (V Zn ), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn 2 GeO 4 from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn 2 GeO 4 :Mn

Fuel retention under elevated wall temperature in KSTAR with a carbon wall

Science.gov (United States)

Cao, B.; Hong, S. H.

2018-03-01

The fuel retention during KSTAR discharges with elevated wall temperature (150 °C) has been studied by using the method of global particle balance. The results show that the elevated wall temperature could reduce the dynamic retention via implantation and absorption, especially for the short pulse shots with large injected fuel particles. There is no signature changing of long-term retention, which related to co-deposition, under elevated wall temperature. For soft-landing shots (normal shots), the exhausted fuel particles during discharges is larger with elevated wall temperature than without, but the exhausted particles after discharges within 90 s looks similar. The outgassing particles because of disruption could be exhausted within 15 s.

The effect of annealing temperature on the optical properties of a ruthenium complex thin film

Energy Technology Data Exchange (ETDEWEB)

Ocakoglu, Kasim, E-mail: kasim.ocakoglu@mersin.edu.tr [Advanced Technology Research & Application Center, Mersin University, TR-33343, Yenisehir, Mersin (Turkey); Department of Energy Systems Engineering, Faculty of Technology, Mersin University, TR-33480 Mersin (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Department of Materials Science and Engineering, Faculty of Engineering and Architecture, Izmir Katip Celebi University, Izmir (Turkey); Aydin, Hasan [Izmir Institute of Technology, Department of Material Science and Engineering, Gulbahce Campus, 35430, Urla, Izmir (Turkey); Emen, Fatih Mehmet [Faculty of Arts and Sciences, Department of Chemistry, Mehmet Akif Ersoy University, TR-15030 Burdur (Turkey)

2016-08-01

The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10{sup −5} eV/K. Furthermore, the thermal analysis studies were carried out in the range 298–673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298–673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO{sub 2}, CO molecules and SO{sub 3}H group was eliminated between 614 K and 666 K. - Highlights: • Optical parameters of a ruthenium polypyridyl complex film under varying annealing temperatures • The film is quite stable up to 573 K. • The rate of change of optical energy gap was obtained as 5.23 × 10{sup −5} eV/K.

Annealing behavior of solution grown polyethylene single crystals

NARCIS (Netherlands)

Loos, J.; Tian, M.

2006-01-01

The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

Physical mechanisms related to the degradation of LPCVD tungsten contacts at elevated temperatures

International Nuclear Information System (INIS)

Shenai, K.; Lewis, N.; Smith, G.A.; McConnell, M.D.; Burrell, M.

1990-01-01

The thermal stability of LPCVD (low pressure chemical vapor deposition) tungsten contacts to n-type silicon is studied at elevated temperatures in excess of 650 degrees C. The process variants studied include silicon doping, tungsten thickness, and post tungsten deposition dielectric stress temperatures. Detailed measurements of Kelvin contact resistance were made at room temperature as well as at elevated temperatures up to 165 degrees C. The tungsten contact resistance degradation at elevated stress temperatures is correlated with worm hole formation in silicon and the formation and diffusion of tungsten silicide. Extensive analytical measurements were used to characterize the material transformation at elevated stress temperatures to understand the physical mechanisms causing contact degradation

Annealing behavior and shape memory effect in NiTi alloy processed by equal-channel angular pressing at room temperature

International Nuclear Information System (INIS)

Shahmir, Hamed; Nili-Ahmadabadi, Mahmoud; Wang, Chuan Ting; Jung, Jai Myun; Kim, Hyoung Seop; Langdon, Terence G.

2015-01-01

A martensitic NiTi shape memory alloy was processed successfully by equal-channel angular pressing (ECAP) for one pass at room temperature using a core–sheath billet design. The annealing behavior and shape memory effect of the ECAP specimens were studied followed by post-deformation annealing (PDA) at 673 K for various times. The recrystallization and structural evolution during annealing were investigated by differential scanning calorimetry, dilatometry, X-ray diffraction, transmission electron microscopy and microhardness measurements. The results indicate that the shape memory effect improves by PDA after ECAP processing. Annealing for 10 min gives a good shape memory effect which leads to a maximum in recoverable strain of 6.9 pct upon heating where this is more than a 25 pct improvement compared with the initial state

Structural analysis for elevated temperature design of the LMFBR

International Nuclear Information System (INIS)

Griffin, D.S.

1976-02-01

In the structural design of LMFBR components for elevated temperature service it is necessary to take account of the time-dependent, creep behavior of materials. The accommodation of creep to assure design reliability has required (1) development of new design limits and criteria, (2) development of more detailed representations of material behavior, and (3) application of the most advanced analysis techniques. These developments are summarized and examples are given to illustrate the current state of technology in elevated temperature design

Effect of Annealing Temperature on the Ballistic Limit Velocity of Ti-6A1-4V ELI

National Research Council Canada - National Science Library

Burkins, M

1997-01-01

.... Army Research Laboratory (ARL) and the RMI Titanium Company (RMI) performed a joint research program to evaluate the effect of annealing temperature on Ti-6A1-4V alloy, extra-low interstitial (ELI...

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

High temperature annealing effects on chromel (Ni90Cr10) thin films and interdiffusion study for sensing applications

International Nuclear Information System (INIS)

Datta, Arindom; Cheng Xudong; Miller, Michael A.; Li Xiaochun

2008-01-01

Metal embedded thin film thermocouples are very attractive for various applications in harsh environments. One promising technique to embed thin films micro sensors is diffusion bonding, which requires high temperatures and pressures typically in a vacuum. In this study, high temperature annealing effects on chromel (Ni90Cr10) thin film, an important sensor material as one of the components in type K thermocouple, were investigated in a diffusion bonding environment. Annealing was carried out at 800 deg. C for one hour in a diffusion bonder under vacuum without applying pressure. Under such conditions; surface, interface and interdiffusion phenomena were investigated using different characterization techniques including X-ray Diffraction, X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy, and Energy Dispersive Spectroscopy. Results indicate that the present combination of dielectrics is quite reliable and Ni90Cr10 films of 500 nm thickness can be used for applications at least up to 800 deg. C due to a protective thin chromium oxide layer formation on top of the sensor film during annealing

Hydrogen Annealing Of Single-Crystal Superalloys

Science.gov (United States)

Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

1995-01-01

Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

Dielectric response of capacitor structures based on PZT annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

2016-12-09

Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

Iron phthalocyanine on Cu(111): Coverage-dependent assembly and symmetry breaking, temperature-induced homocoupling, and modification of the adsorbate-surface interaction by annealing.

Science.gov (United States)

Snezhkova, Olesia; Bischoff, Felix; He, Yuanqin; Wiengarten, Alissa; Chaudhary, Shilpi; Johansson, Niclas; Schulte, Karina; Knudsen, Jan; Barth, Johannes V; Seufert, Knud; Auwärter, Willi; Schnadt, Joachim

2016-03-07

We have examined the geometric and electronic structures of iron phthalocyanine assemblies on a Cu(111) surface at different sub- to mono-layer coverages and the changes induced by thermal annealing at temperatures between 250 and 320 °C by scanning tunneling microscopy, x-ray photoelectron spectroscopy, and x-ray absorption spectroscopy. The symmetry breaking observed in scanning tunneling microscopy images is found to be coverage dependent and to persist upon annealing. Further, we find that annealing to temperatures between 300 and 320 °C leads to both desorption of iron phthalocyanine molecules from the surface and their agglomeration. We see clear evidence of temperature-induced homocoupling reactions of the iron phthalocyanine molecules following dehydrogenation of their isoindole rings, similar to what has been observed for related tetrapyrroles on transition metal surfaces. Finally, spectroscopy indicates a modified substrate-adsorbate interaction upon annealing with a shortened bond distance. This finding could potentially explain a changed reactivity of Cu-supported iron phthalocyanine in comparison to that of the pristine compound.

Qualification of diesel generator exhaust carbon steel piping to intermitted elevated temperatures

International Nuclear Information System (INIS)

Ratiu, M.D.; Moisidis, N.T.

1996-01-01

The diesel generator exhaust piping, usually made up of carbon steel piping (e.g., ASME SA-106, SA-53), is subjected to successive short time exposures at elevated temperatures up to 1,000 F (538 C). A typical design of this piping, without consideration for creep-fatigue cumulative damage, is at least incomplete, if not inappropriate. Also, a design for creep-fatigue, usually employed for long-term exposure to elevated temperatures, would be too conservative and will impose replacement of the carbon steel piping with heat-resistant CrMo alloy piping. The existing ASME standard procedures do not explicitly provide acceptance criteria for the design qualification to withstand these intermittent exposures to elevated temperatures. The serviceability qualification proposed is based on the evaluation of equivalent full temperature cycles which are presumed/expected to be experienced by the exhaust piping during the design operating life of the diesel engine. The proposed serviceability analysis consists of: (a) determination of the permissible stress at elevated temperatures, and (b) estimation of creep-fatigue damage for the total expected cycles of elevated temperature exposures following the procedure provided in ASME Code Cases N-253-6 and N-47-28

Hypercoagulability in response to elevated body temperature and central hypovolemia

DEFF Research Database (Denmark)

Meyer, Martin; Ostrowski, Sisse R; Overgaard, Flemming Anders

2013-01-01

Coagulation abnormalities contribute to poor outcomes in critically ill patients. In trauma patients exposed to a hot environment, a systemic inflammatory response syndrome, elevated body temperature, and reduced central blood volume occur in parallel with changes in hemostasis and endothelial...... damage. The objective of this study was to evaluate whether experimentally elevated body temperature and reduced central blood volume (CBV) per se affects hemostasis and endothelial activation....

Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

International Nuclear Information System (INIS)

Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

2002-01-01

The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

Science.gov (United States)

Yu, Haijiang

This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

Influence of annealing temperature and organic dyes as sensitizers on sol–gel derived TiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Rani, Mamta; Abbas, Saeed J.; Tripathi, S.K., E-mail: surya@pu.ac.in

2014-09-15

Highlights: • Preparation of rice shaped TiO{sub 2} nanorods with anatase structure by sol–gel method. • Effect of post deposition annealing on structural properties of TiO{sub 2} is studied. • Unlike individual dye, absorption of Cocktail dye with TiO{sub 2} nanorods is broader. • Cocktail dye sensitized TiO{sub 2} film has more photosensitivity than EY, RB, AO. • Increase in photosensitivity up to optimum temperature is due to hole passivation. - Abstract: Five different organic dyes and reported cocktail dye composed of these dyes are used as sensitizer for titanium dioxide (TiO{sub 2}). Rice shaped (TiO{sub 2}) nanorods are prepared by using sol–gel method. The films annealed at 673 K and above are crystalline with anatase structure. The effect of post annealing temperature is studied on various structural parameters. Cocktail dye shows broader absorption with TiO{sub 2} nanorods in visible region compared with five dyes. Maximum photosensitivity is obtained with RhB dye, followed by FGF and cocktail dye sensitized TiO{sub 2} films. Increase in photosensitivity is due to passivating some hole traps on the surface up to some optimum temperature, above which photosensitivity decreases due to a higher photo activation energy compared to dark conductivity in low temperature region and also may be due to damage of the dye molecule. This work may prove its worth for understanding the electron transport in dye sensitized nanodevices.

Modelling of aluminium sheet forming at elevated temperatures

NARCIS (Netherlands)

van den Boogaard, Antonius H.; Huetink, Han

2004-01-01

The formability of Al–Mg sheet can be improved considerably, by increasing the temperature. By heating the sheet in areas with large shear strains, but cooling it on places where the risk of necking is high, the limiting drawing ratio can be increased to values above 2.5. At elevated temperatures,

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

OpenAIRE

Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

2008-01-01

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

Placement by thermodynamic simulated annealing

International Nuclear Information System (INIS)