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Sample records for eletron-positron em si

  1. Marcas em si: vivenciando a dor do (auto preconceito

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    Iací Proença Palmeira

    2013-12-01

    Full Text Available Pesquisa qualitativa cujo objetivo foi compreender as representações sociais do corpo por mulheres com alterações provocadas pela hanseníase, para que os cuidados de enfermagem possam atender de forma mais abrangente às suas necessidades. O referencial foi o da teoria das representações sociais. Participaram quarenta e três mulheres de uma unidade de referência especializada em dermatologia sanitária. Realizaram-se entrevistas, cujos conteúdos foram processados pelo software ALCESTE, o qual gerou uma classe cujos vocábulos associaram-se ao preconceito ancorado na autopercepção negativa da hanseníase. O esquema explicativo das representações sociais mostrou uma forte marca da memória social da lepra, cuja construção simbólica ampara-se no medo da doença. Concluiu-se sobre a necessidade de se investir na desconstrução de crenças arcaicas sobre a lepra para que se tenham novos modos de agir frente à hanseníase.

  2. Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

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    M. Florian

    2005-09-01

    Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

  3. O problema do ethos da escrita de si em Montaigne e em Petrarca: do ensaio à epístola

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    Sergio Xavier Gomes de Araujo

    2012-12-01

    Full Text Available Montaigne insiste ao longo dos Ensaios em seu desprezo pela retórica. Mas como procuraremos mostrar aqui, sua "forma natural" inscreve-se em grande medida dentro dos termos da própria retórica, sob uma mobilização particular dos preceitos e convenções tradicionalmente apropriados à escrita em primeira pessoa, especialmente aqueles que regulavam o sermo familiaris, gênero recuperado pela primeira vez na Renascença por Petrarca. Retomamos assim, para desenvolvê-la, a fecunda intuição de Hugo Friedrich que, em sua clássica obra sobre os Ensaios de Montaigne, aponta o seu parentesco com a forma epistolar de Petrarca, sem, porém, acompanhá-lo quando distancia o ensaio da epístola familiar, por entendê-lo como marco de ruptura com os procedimentos da retórica e, assim, com toda a prosa artisticamente trabalhada do humanismo.Montaigne insists throughout the course of the Essays on his disdain for rhetoric. But as we try to expose here, his "natural form" includes itself to a large extent in the terms of rhetoric itself, under a particular usage of the precepts and conventions traditionally appropriate to the discourse in first person, especially those which regulated the sermo familiaris, genre recuperated for the first time in the Renaissance by Petrarch. We retake, in order to develop it, the fruitful intuition of Hugo Friedrich in his classical work about Montaigne's Essays, indicating its kinship with Petrarch's epistolary form, without, however, following him when he moves the essay away from the familiar epistle by interpreting the essay as a rupture with the rhetorical procedures and therefore with all the artistically worked prose of humanism.

  4. DESENVOLVIMENTO DAS SIGNIFICAÇÕES DE SI EM CRIANÇAS NA PERSPECTIVA DIALÓGICO-CULTURAL

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    Monica Roncancio Moreno

    2014-12-01

    Full Text Available A partir da abordagem da Psicologia Cultural e da Teoria do Self Dialógico, o objetivo da pesquisa consistiu em caracterizar e analisar as significações de uma criança em fase de transição da Educação Infantil (EI para o Ensino Fundamental (EF relativas às suas percepções e avaliações de si. Utilizando uma metodologia qualitativa de caráter idiográfico, acompanhamos um grupo de crianças durante seu último semestre na EI e os primeiros seis meses no EF, realizando observações diretas e sessões semiestruturadas diversas, devidamente filmadas, e entrevistas com pais e professores. Neste artigo analisamos o estudo de caso de Gisele, identificando três campos afetivo-semióticos (CAS que configuram seu sistema de Self: ser versus não ser bonita, ser versus não ser inteligente e ser versus não ser amada. Estes três campos afetivo-semióticos evidenciam as fortes tensões no Self de Gisele. Com base nos dados obtidos, verificamos que a transição da EI para o EF permitiu a configuração e reconfiguração de diversos campos afetivo-semióticos no sentido da transformação e equilíbrio (desenvolvimento do sistema de Self de Gisele. Isto ocorreu mediante a emergência de novas significações de si no contexto da dinâmica no interior dos referidos campos. Evidenciamos situações de conflito e a configuração de opostos capazes de levar à síntese de novos sentidos do Self dialógico em desenvolvimento.

  5. O cuidado de si como princípio ético do trabalho em enfermagem

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    Águeda Lenita Pereira Wendhausen

    2005-01-01

    Full Text Available A partir del entendimiento de que el acto de cuidar y el trabajo de enfermería son esencialmente humanos, buscamos problematizarlos en la actualidad. La fragmentación del conocimiento, en el área de enfermería y de la salud, ha sido un factor de deshumanización del cuidado y del proceso de trabajo de cuidar. Foucault a través de los estudios sobre la gobernabilidad nos posibilita la comprensión de las bases que nos constituyen en agentes morales. De ahí, deriva, como hacemos nuestras elecciones y sobre que pautamos nuestros valores. Es posible pensar el cuidado de enfermería y el trabajo de esta categoría profesional como un proceso a ser (resignificado teniendo como referencia una ética que tome la estética de la existencia como propuesta cotidiana. En este sentido, el cuidado de si mismo, el compartir en grupo y la ética solidaria pueden ser puntos de partida para la retomada del valor de nuestras elecciones profesionales, rescatando la humanidad que estas contienen.

  6. Planejamento estratégico de SI/TI: melhores práticas para educar e treinar pessoas em organizações governamentais brasileiras

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    José Gilson de Almeida Teixeira Filho

    2013-11-01

    Full Text Available Este artigo apresenta um conjunto de melhores práticas para educar e treinar, estabelecidas pelo modelo de maturidade MMPE-SI/TI (Gov que é direcionado ao planejamento estratégico de SI/TI (Sistemas de Informação/Tecnologia da Informação de organizações governamentais brasileiras. Este modelo foi concebido em conformidade com os principais modelos e normas nacionais e internacionais utilizados para definição e avaliação. O artigo ainda apresenta uma descrição completa do processo “Educar e Treinar Pessoas (ETP” que está estruturado nas seguintes partes: propósito, resultados esperados, melhores práticas e produtos de trabalho. Por fim, são apresentados os resultados de uma validação realizada com 106 especialistas da área de SI/TI que opinaram sobre a qualidade do modelo e deste processo em particular, além da descrição de ferramentas e técnicas para apoiar a sua implementação.

  7. Síntese de Al2O3/SiC em forno de microondas: estudo de parâmetros do processo Synthesis of Al2O3/SiC in microwave oven: study of the processing parameters

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    T. P. Deksnys

    2005-12-01

    Full Text Available Estudos demonstram a eficiência do método de moagem prévia do aluminossilicato precursor para a síntese da fase Al2O3/SiC por meio da reação de redução carbotérmica em forno de microondas. No presente trabalho, além da moagem do precursor, outros parâmetros de reação foram estudados, como tempo de reação, potência da radiação emitida e fluxo de gás. As reações foram realizadas em forno de microondas semi-industrial, com adaptação para inserção de gás inerte. Dois tipos de reatores foram avaliados: um reator cilíndrico, termicamente isolado, e um reator tubular de leito fixo, nos quais foram colocados os precursores peletizados. Existe uma relação direta entre a saturação da atmosfera de reação com a cinética de redução carbotérmica do aluminossilicato. Esse comportamento, aliado a elevadas potências de emissão, favorecem a formação da fase Al2O3/SiC em períodos de tempo reduzidos.Results presented elsewhere have confirmed the feasibility of the previous milling process of the starting materials for the synthesis of Al2O3/SiC by the microwave-assisted carbothermal reduction. In the present work, parameters such as precursor milling, reaction time, microwave's power level and gas flow have been investigated. Reactions were carried out in a semi-industrial microwave oven (Cober Inc., USA, which allowed the inert gas insertion. Two reactions arrangement were developed to perform the synthesis: a cylindrical reactor, thermally insulated and a pipe fluidized bed reactor. Into both reactors, the precursor was applied in a palletized form to react. There is a direct relation between the reaction atmosphere saturation and the kinetics of the carbothermal reduction. This behavior, in addiction to high power levels of microwave radiation (>1.5 KW, favors the formation of Al2O3/SiC in a short time.

  8. Choque térmico em filtros cerâmicos do sistema Al2O3-SiC Thermal shock on ceramic filters in the system Al2O3-SiC

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    V. R. Salvini

    2002-03-01

    Full Text Available Em diversas aplicações as cerâmicas celulares são submetidas a tensões térmicas severas, tal como na filtração de metais fundidos. Contudo, há poucos estudos sobre o desempenho ao choque térmico destes materiais. Uma das razões é que a metodologia para análise desta classe de materiais deve ser distinta daquela utilizada para os materiais cerâmicos densos. Isto porque no caso dos materiais celulares para filtração de metais fundidos o meio causador do choque térmico infiltra-se rapidamente na estrutura reticular de poros, reduzindo o gradiente de temperatura entre a superfície externa e a do interior do corpo. Neste contexto, a proposta do presente trabalho é verificar os efeitos de algumas propriedades dos filtros cerâmicos em seu comportamento mecânico durante testes de choque térmico em água. As propriedades consideradas são a permeabilidade, a condutividade térmica e a área superficial específica dos filtros. Para isto foram utilizados os filtros cerâmicos do sistema de Al2O3-SiC de 8, 10, 20 e 30 ppi (poros por polegada linear.In many applications, open-cell ceramics are expected to undergo severe thermal stresses, for instance, in their use as molten metal filters. However, only a few studies have considered the thermal shock behavior of these materials. One of the main reasons is the theoretical approach used for dense ceramics which may not be valid for porous materials. In this context, the aim of this work is to analyze the effects of permeability, specific surface area and thermal conductivity on the mechanical behavior of ceramic filters subjected to water quenching tests. Al2O3-SiC filters with nominal cell sizes, expressed as the number of pores per linear inch (ppi, ranged from 8 to 30 ppi were used in the experimental tests.

  9. Fibras de vidro a base de Li20 - Zr02 - BaO - Si02 recobertas com Nb205 para utilização em micro-extração em fase sólida

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    Silveira, Cristian Berto da

    2005-01-01

    Tese (doutorado) - Universidade Federal de Santa Catarina, Centro de Ciências Físicas e Matemáticas. Programa de Pós-graduação em Química Neste trabalho são descritas as metodologias para obtenção e modificações da superfície de fibras de vidro de composição Li2O-ZrO2-BaO-SiO2. Apresenta-se também as aplicações destas fibras na determinação, por SPME, de fenol e de uma mistura de álcoois. Para obtenção das fibras de vidro construiu-se um equipamento, o qual baseia-se na técnica de estiram...

  10. Choque térmico em filtros cerâmicos do sistema Al2O3-SiC

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    Salvini, V. R.; Innocentini, M. D. M.; Pandolfelli, V. C.

    2002-01-01

    Em diversas aplicações as cerâmicas celulares são submetidas a tensões térmicas severas, tal como na filtração de metais fundidos. Contudo, há poucos estudos sobre o desempenho ao choque térmico destes materiais. Uma das razões é que a metodologia para análise desta classe de materiais deve ser distinta daquela utilizada para os materiais cerâmicos densos. Isto porque no caso dos materiais celulares para filtração de metais fundidos o meio causador do choque térmico infiltra-se rapidamente na...

  11. Spirituality in self-care for intensive care nursing professionals La espiritualidad en el cuidado de si para profesionales de enfermería en terapia intensiva A espiritualidade no cuidado de si para profissionais de enfermagem em terapia intensiva

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    Luciana Winterkorn Dezorzi

    2008-04-01

    contribuía para mejor cuidar de otros.Este estudo teve por objetivo compreender como a espiritualidade permeia o processo de cuidar de si e do outro, no mundo da terapia intensiva, sob o olhar das profissionais de enfermagem. A pesquisa caracterizou-se por abordagem qualitativa do método criativo-sensível de Cabral, que guiou a produção e a análise das informações em nove oficinas de arte e experiências. Participaram do estudo nove cuidadoras de enfermagem do Centro de Tratamento Intensivo (CTI de um hospital universitário. Este texto apresenta um dos temas emergidos na pesquisa: a espiritualidade no cuidado de si, que foi evidenciada nas práticas cotidianas que aconteciam por meio da oração, do contato íntimo com a natureza, assim como do senso de conexão com uma Força Superior que propiciava tranqüilidade, bem-estar e fortalecimento à vida e ao trabalho das cuidadoras no CTI. O autoconhecimento revelou-se como prática essencial no cuidado de si para também melhor cuidar do outro.

  12. Desgaste corrosivo-cavitativo-erosivo de um aço-carbono em meio aquoso com frações de sal (NaCl), CO2 e particulados sólidos (SiO2)

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    Silva, Fernando Nunes da

    2012-01-01

    Um lote de oitenta e quatro corpos-de-prova (CP) de aço AISI 1018 foi investigado em laboratório sob solicitações corrosivas, cavitativo-corrosivas (CO2) e erosivocorrosivas (SiO2+CO2) em meio aquoso salino e a duas temperaturas. Foram realizados ensaios de microdureza Vickers a três níveis de subsuperfície (HV0,05, HV0,10, HV0,20). Um fluxo agitado colidiu contra os CPs, em todas as condições de ensaio, sem e com agitação mecânica e borbulhamento de gás, sem e com contamina...

  13. Gera??o coca-cola: escrita de si, mem?ria e cultura jovem em Feliz Ano Velho, de Marcelo Rubens Paiva

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    Silva, Jo?o Batista Peixoto da

    2012-01-01

    O objetivo deste trabalho ? investigar o universo da cultura jovem brasileira nos anos 80, em particular, sua proje??o em torno de um g?nero de escritos voltados para o tema da viv?ncia da experi?ncia jovem no contexto do Brasil da abertura pol?tica e da redemocratiza??o. Para tanto, selecionamos o livro Feliz Ano Velho, de Marcelo Rubens Paiva, publicado no in?cio da d?cada de 1980, mais precisamente em 1982, se projetando enquanto retrato da experi?ncia da juventude que vivenciou os dilemas...

  14. EM study of crystallography and phase relationships in the Be/sub 3/N/sub 2/--BeSiN/sub 2/ system

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    Shaw, T.M.

    1977-12-01

    Transmission electron microscopy and diffraction have been used to examine structural aspects of phases along the BeSiN/sub 2/-Be/sub 3/N/sub 2/ tie line of the Be-Si-O-N system. Electron diffraction experiments are found to substantiate previous x-ray evidence for the derived structures of BeSiN/sub 2/, ..beta.. Be/sub 3/N/sub 2/, ..cap alpha.. Be/sub 3/N/sub 2/ and the presence of a number of long period superstructures at intermediate compositions. Real space observations using direct fringe and structure imaging techniques have been made and are in agreement with the 15R polytype structure derived from x-ray diffraction data. In addition, these observations indicate that beryllium atoms are preferentially sited in cubic stacked layers, allowing the polytype structures to be described as a coherent intergrowth of layers of the BeSiN/sub 2/ and ..beta.. Be/sub 3/N/sub 2/ structure. Further observations made on a non stoichiometric BeSiN/sub 2/ sample suggests that alternatively the polytypes may be described in terms of a regularly faulted BeSiN/sub 2/ structure. Each fault changes the coordination of tetrahedral sites from base sharing to edge sharing in the fault, allowing excess beryllium atoms to be accommodated in the close packed nitrogen lattice. For larger deviations from the BeSiN/sub 2/ stoichiometric composition a higher density of faults occur which interact to form ordered arrangements and the observed polytype structures. The present observations establish that polytypism in the Be-Si-N system is related to the general phenomenon of crystallographic shear as observed in other complex oxide and ceramic systems. It is suggested that similar faulting may account for the polytype structures in other Sialon systems.

  15. Impregnação de filmes do compósito de policarbonato (PC e sílicagel (Si com corante fotocrômico em fluido supercrítico = Impregnation of composite from polycarbonate (PC and silica gel (Si films with photochromic dye in supercritical fluid

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    Fernanda de Almeida Fin de Lima

    2010-01-01

    Full Text Available O objetivo deste trabalho foi estudar a impregnação do corante fotocromático Reversacol Graphit® em filmes do compósito de policarbonato (PC e sílica-gel (Si, com a finalidade de obter aplicações em lentes fotocrômicas. Filmes de PC puros também foramimpregnados nas mesmas condições, para verificar o efeito da adição de sílica-gel. Os filmes do compósito foram produzidos em proporções de Si:PC de 1:40 e 1:80 (m m-1, pelo método casting. Para a impregnação do corante Reversacol Graphit nos filmes obtidos foiutilizado o processo supercrítico, pela sua eficiência e benefícios. A impregnação foi feita nos tempos de 15, 30, 45, 60, 90, 120, 150 e 180 min. A temperatura e a pressão adotadas foram de 60ºC e 120 bar. A quantidade de pigmento impregnado nos filmes de Si:PC – 1:40e 1:80 (m m-1 foi de 29 e 23% de massa de corante por massa de compósito, respectivamente, e para o filme de PC puro foi de apenas 2,2% massa de corante por massa de compósito. Pelas análises térmicas, verificou-se que os filmes do compósito apresentarammaior estabilidade térmica. Pela técnica de microscopia eletrônica, observou-se que os filmes de PC puro e dos compósitos Si:PC – 1:40 e 1:80 (m m-1 apresentaram uma superfície lisa e homogênea.The aim of this work was to study the impregnation of the photochromic dye Reversacol Graphit® in composite films ofpolycarbonate (PC and silica gel, with the purpose of finding applications in photochromic lenses. Pure PC films were also impregnated in the same conditions, to verify the effect of the silica-gel addition. The composites films were produced in Si:PC ratios of 1:40 and 1:80 (m m-1, using the casting method . For the impregnation of the dye Reversacol Graphit in the obtained films, the supercritical process was used due to its efficiency and benefits. The impregnation was made in the times of 15, 30, 45, 60, 90, 120, 150 and 180 minutes. The adopted temperature and pressure

  16. Study of intermittency of target fragments in the interactions of 28Si-Em collisions at 14.6 A GeV

    International Nuclear Information System (INIS)

    Ayaz Ahmad, M.; Ashraf T, M.; Ahmad, Shafiq

    2008-01-01

    An attempt has been made to investigate the intermittent behaviour and fractal properties of emission spectra of fast and slow target associated particles from 28 Si-emulsion interactions at 14.6 A GeV using nuclear emulsion in cosθ phase space

  17. O registro de si e do outro: práticas de leitura e de escrita de estudantes em ambiente digital

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    Adriana Barroso de Azevedo

    2015-07-01

    Full Text Available http://dx.doi.org/10.5007/1807-9288.2015v11n1p369 O presente artigo é um recorte da Dissertação de Mestrado intitulada “Ensino Médio, Língua Portuguesa e Portal Educacional: percepções emergentes das narrativas de alunos inseridos em práticas de letramento digital” (PERICO, 2015 na qual foi abordada a importância das Tecnologias Digitais de Informação e Comunicação (TDIC no atual contexto educacional. A metodologia adotada foi a pesquisa qualitativa de cunho investigativo, na modalidade narrativa. A apuração dos dados resultou em oito categorias de análise, sendo selecionada para este artigo aquela que analisa a produção de alunos em ambiente digital. Os resultados obtidos apontaram para uma efetiva preocupação com a escrita em norma culta, por parte dos estudantes inseridos no processo, ao terem seus textos lidos, analisados e debatidos por outros colegas.

  18. Da autobiografia ao testimonio: as representações de si e da história em Memorias de un soldado desconocido, de Lurgio Gavilán Sánchez

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    Lorena Carvalho dos Reis

    2016-03-01

    Full Text Available Memorias de un soldado desconocido. Autobiografía y antropología de la violencia (2012 é uma obra que trás à tona o relato de vida de Lurgio Gavilán Sánchez, um cidadão peruano que participou diretamente do maior conflito armado do seu país, a Guerra Interna do Peru (1980-2000. Tendo em vista o contexto de produção da obra, seu gênero e as dúvidas teóricas suscitadas tanto pelo testimonio quanto pela autobiografia, este artigo visa analisar as estratégias de representação de si e da história no texto autobiográfico de Gavilán, a fim de contribuir para os estudos da memória e do testemunho nessas vertentes literárias.

  19. Aesthetic trials: taking care of oneself, of the other and of the environment in which we live Experimentações estéticas: o cuidado de si, do outro e do ambiente em que vivemos

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    Cláudio Tarouco de Azevedo

    2017-10-01

    Full Text Available Objetivo: Apresentar a pesquisa-intervenção desenvolvida pelos autores em forma de atividades artístico-pedagógicas, denominadas experimentações estéticas, analisando as mesmas e seus efeitos enquanto conjunto prático-teórico voltado ao cuidado de si, do outro e do ambiente. Métodos: Construído a partir da experiência dos autores com práticas de pesquisa inspiradas nos estudos sobre As Três Ecologias e na metodologia Sociopoética, sendo utilizada na análise a escrita presencial dos participantes durante as oficinas e as respostas dos mesmos às questões enviadas por e-mail. Resultados: Apontam para a superação dos medos internos e a descoberta das potencialidades pessoais para enfrentar desafios. A sensibilidade do olhar e o envolvimento com o outro como elemento fundamental no exercício de confiança das relações cotidianas. Conclusão: O processo de experimentação indica que existe uma potência do encontro, dos intercâmbios e da sensibilidade quando privilegiamos um conhecimento que se apreende com o corpo em movimento, relacionando-se com o outro e o mundo. Descritores: Experimentações estéticas, corpo, intervenção socioambiental

  20. Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-PIN

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Fabio; Scheibel, Viviane [Universidade Estadual de Londrina, PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada]. E-mail: bonn@uel.br; Melquiades, Fabio Luiz [Universidade Estadual do Centro-Oeste, Guarapuava, PR (Brazil). Dept. de Fisica; Moraes, Liz Mary Bueno de [Centro de Energia Nuclear na Agricultura (CENA), Piracicaba, SP (Brazil). Lab. de Instrumentacao Nuclear

    2005-07-01

    The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo {sub l}ter, 25 kV/20 {sub A}) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 {sub g} g{sub 1}, representing nearly 0.4. (author)

  1. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-Pin

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Fabio; Appoloni, C.R., E-mail: bonn@uel.b [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada; Melquiades, Fabio L. [Universidade Estadual do Centro Oeste (UNICENTRO), Guarapuava, PR (Brazil). Dept. de Fisica

    2007-07-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 muA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 mug g{sup -1} have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 mug g{sup -1} were obtained for Fe

  2. Drainage effect in eutectic Al-Si foam using similar alporas process; Efeito de drenagem em espumas de liga de aluminio silicio eutetico utilizando processo similar ao alporas

    Energy Technology Data Exchange (ETDEWEB)

    Filho, M.O.; Junior, A.C.S; Ferrandini, P.L. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil). Departamento de Materiais e Tecnologia; Nakazato, A.Z.; Assis, W.L.S., E-mail: mauriciooliveirafilho@hotmail.com [Universidade Federal Fluminense (UFF), Resende, RJ (Brazil). Escola de Engenharia de Volta Redonda

    2016-07-01

    Cellular materials have particular properties. This properties are very interesting in various type of industries, as construction, automobile and shipbuilding. Two reasons why metal foams are apply in more companies are difficult process control and high production costs. Therefore, this study aims to analyze the drainage effect in four samples produced with alloy Al-Si eutectic using CaCO{sub 3} as foaming agent, since this is low cost than TiH{sub 2} used normally in Alporas process and this foam have well pores uniform. For these samples has been used 700°C during all process, mixing time was 180 seconds, holding time was 150 seconds and 3,5 w.t% CaCO3. Therefore, these samples were cut transversally and analyzed what were the drainage effect on the apparent density, relative density and porosity. The free zone bubbles were noticed in all the samples. (author)

  3. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  4. Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

    Energy Technology Data Exchange (ETDEWEB)

    Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

    2013-01-24

    Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

  5. Poesia em Revista: Oroboro

    Directory of Open Access Journals (Sweden)

    Helena Alves Gouveia

    2008-10-01

    Full Text Available http://dx.doi.org/10.5007/1984-784x.2008v8n12p38 A serpente que engole a si mesma é uma figura curiosa do simbolismo de um processo de contínua transformação, de um movimento circular incessante, rumo à infinitude, sem traços de fim ou começo. Oroboro é um nome de origem grega que remete a esta serpente que se morde e penetra em si mesma ao engolir o próprio rabo. Mas também é o nome da revista de cultura editada em Curitiba pelos artistas-editores Ricardo Corona e Eliana Borges.

  6. Application of PtSn/C catalysts and Nafion SiO{sub 2} membranes in direct ethanol fuel cell at high temperatures; Aplicacao de catalisadores PtSn/C e membranas Nafion SiO{sub 2} em celulas a combustivel de etanol direto em elevadas temperaturas

    Energy Technology Data Exchange (ETDEWEB)

    Dresch, Mauro Andre

    2014-07-01

    This work has as objective to evaluate anodes and electrolytes in direct ethanol fuel cells (DEFC) operating at high temperature (130 deg C). As anode materials, electrocatalysts based on Pt Sn/C were prepared by Modified Polyol Method with various Pt:Sn atomic ratios. Such methodology promotes self organized electrocatalysts production with narrow particle size distribution and high alloying degree. The electrocatalysts were characterized by XRD, and CO stripping. The results showed that these materials presented high alloying degree and Eonset CO oxidation at lower potential as commercial materials. As electrolyte, Nafion-SiO{sub 2} hybrids were synthesized by sol-gel reaction, by the incorporation of oxide directly into the ionic aggregates of various kinds of Nafion membranes. The synthesis parameter, such sol-gel solvent, membrane thickness and silicon precursor concentration were studied in terms of silica incorporation degree and hybrid mechanical stability. Finally, the optimized anodes and electrolytes were evaluated in DEFC operating at 80 - 130 deg C temperature range. The results showed a significant improvement of the DEFC performance (122 mW cm{sup -2}), resulted from the acceleration of ethanol oxidation reaction rate due to anode material optimization and high temperature operation once the use of hybrids possibilities the increase of temperature without a significant conductivity loses. In this sense, the combination of optimized electrodes and electrolytes are a promising alternative for the development of these devices. (author)

  7. Characterization of cylinder liners produced with hypereutectic Al-Si alloys and investigation of corrosion behaviour in synthetic automotive condensed solution; Caracterizacao de camisas de cilindro em ligas Al-Si hipereuteticas e investigacao do comportamento de corrosao em meio de condensado sintetico automotivo

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Hamilta de Oliveira

    2006-07-01

    In the present study four hypereutectic Al-Si alloys, three produced by spray forming and one by casting, were characterized for microhardness, roughness, microstructure, texture and corrosion resistance in a synthetic automotive condensed solution (SACS). Two of the spray formed alloys tested were obtained from cylinder liners and the other was laboratory made. Spray forming involves alloy atomization and droplets deposition on a substrate, previous to the solidification of all of the droplets. This process favours the production of materials with a fine microstructure free of macrosegregation that is related to improved hot workability. The microstructure characterization of the four alloys revealed the presence of porosities in the laboratory made alloy. All the three alloys produced by spray forming showed a homogeneous distribution of primary precipitates. The microstructure of one of the alloys showed eutectic microstructure, indicating that this alloy was fabricated by casting. In the cylinder liners, the surface roughness was measured and the microhardness of all the alloys was also evaluated. Furthermore, the laboratory made alloy was hot and cold rolled. Texture determinations were carried out to investigate the correlation between the alloy type and their fabrication process. The texture investigation indicated that the fine distribution of primary silicon phase in the alloy hindered the development of texture typical of aluminium alloys deformation, even after severe mechanical work, such as those used in the conversion of pre-formed in cylinder liners. The surface roughness results indicated typical characteristics of the surface finishing used, honing or chemical etching. The microhardness results were dependent on the fabrication process used, with higher microhardness associated to the eutectic alloy comparatively to the spray formed ones. All hypereutectic alloys were tested for corrosion resistance using electrochemical impedance spectroscopy in

  8. Impregnação de filmes do compósito de policarbonato (PC e sílica-gel (Si com corante fotocrômico em fluido supercrítico - DOI: 10.4025/actascitechnol.v32i1.1999

    Directory of Open Access Journals (Sweden)

    Fernanda de Almeida Fin de Lima

    2009-12-01

    Full Text Available O objetivo deste trabalho foi estudar a impregnação do corante fotocromático Reversacol Graphit® em filmes do compósito de policarbonato (PC e sílica-gel (Si, com a finalidade de obter aplicações em lentes fotocrômicas. Filmes de PC puros também foram impregnados nas mesmas condições, para verificar o efeito da adição de sílica-gel. Os filmes do compósito foram produzidos em proporções de Si:PC de 1:40 e 1:80 (m m-1, pelo método casting. Para a impregnação do corante Reversacol Graphit® nos filmes obtidos foi utilizado o processo supercrítico, pela sua eficiência e benefícios. A impregnação foi feita nos tempos de 15, 30, 45, 60, 90, 120, 150 e 180 min. A temperatura e a pressão adotadas foram de 60ºC e 120 bar. A quantidade de pigmento impregnado nos filmes de Si:PC – 1:40 e 1:80 (m m-1 foi de 29 e 23% de massa de corante por massa de compósito, respectivamente, e para o filme de PC puro foi de apenas 2,2% massa de corante por massa de compósito. Pelas análises térmicas, verificou-se que os filmes do compósito apresentaram maior estabilidade térmica. Pela técnica de microscopia eletrônica, observou-se que os filmes de PC puro e dos compósitos Si:PC – 1:40 e 1:80 (m m-1 apresentaram uma superfície lisa e homogênea.

  9. Variabilità morfologica ed ecologica in <em>Neomys fodiensem> e <em>Neomys anomalusem> nell'Appennino settentrionale

    Directory of Open Access Journals (Sweden)

    Dino Scaravelli

    2003-10-01

    Full Text Available I due <em>Neomys> italiani sono ancora da chiarire dal punto di vista della loro caratterizzazione morfologica e ecologica. Il lavoro prende in considerazione un campione di entrambe le specie proveniente da habitat forestali dell?Appennino settentrionale per i quali sono stati identificati i principali parametri ambientali. Vengono quindi descritte la variabilità dei tratti morfologici delle due specie in aree localizzate nel Parco Nazionale Foreste Casentinesi, Monte Falterona e Campigna nell?Appennino tosco-romagnolo. Risultano di sicuro effetto discriminatorio la maschera facciale, il rapporto piede posteriore/coda e i caratteri cranici. Sulla base dei criteri identificativi si sono realizzate rilevazioni di misure corporee per le due specie e una comparazione degli habitat utilizzati. <em>N. fodiensem> appare unica specie nelle faggete-abetine e dominante nei castagneti, mentre nell?Ontaneta e nelle zone aperte e termofile si registra la sola presenza di <em>N. anomalusem>. Mancano entrambi nei prati cespugliati, nella pecceta e nella cerreta. I gradienti presenti sono quindi illustrati. Non appare una differenza altitudinale nel campione esaminato, posto in stazioni tra i 400 e i 1300 m, ma per entrambe vi sono maggiori riscontri nella fascia tra 700 e 850 m. Nell?analisi multivariata rispetto alle altre specie e alle variabili ambientali si riscontra sempre una discreta correlazione con la presenza di acqua di una certa ampiezza, che comunque è significativa solo per <em>N. fodiensem>, mentre risulta di interesse la positiva correlazione di <em>N. anomalusem> con <em>Apodemus sylvaticusem>.

  10. Conservazione e gestione della Lepre italica (<em>Lepus corsicanusem>

    Directory of Open Access Journals (Sweden)

    Francesco Riga

    2003-10-01

    Full Text Available Il recente riconoscimento dello <em>status> specifico della Lepre italica (<em>Lepus corsicanusem> e l?accertamento dell?areale distributivo rappresentano le azioni più importanti per la conservazione di un <em>taxon endemicoem> che si era creduto estinto. Nella penisola la specie presenta un areale discontinuo, il cui limite settentrionale è dato dal comune di Manciano (GR, sul versante tirrenico e da una linea che dalla provincia de L'Aquila arriva al Gargano. In Sicilia la distribuzione è relativamente continua anche in aree non protette. Dati genetici hanno permesso di confermare la presenza in Corsica. Al contrario, nell?Isola d'Elba, a seguito di estese ricerche, sono stati identificati solo esemplari di <em>L. europaeusem>. Nell?Italia peninsulare <em>L. corsicanusem> è spesso presente in simpatria con popolazioni di <em>L. europaeusem>, mentre in Sicilia la lepre europea non ha originato popolazioni stabili, nonostante l?immissione di molte migliaia di individui. La distribuzione ecologica di <em>L. corsicanusem> ed analisi ambientali specifiche, suggeriscono l?adattamento prevalente agli ambienti a clima mediterraneo, benché essa sia presente anche a quote elevate (> 1.500 m s.l.m.. Dati preliminari di abbondanza relativa hanno evidenziato una situazione diversificata tra la penisola e la Sicilia e tra aree a diverso regime di gestione; un confronto tra le aree protette ha evidenziato rispettivamente valori di 5,54 e 11,73 ind./km². La riduzione quali-quantitativa e la frammentazione dell?<em>habitat> delle lepri è un fenomeno potenzialmente pericoloso per la sopravvivenza delle popolazioni, determinando fenomeni di estinzione locale dovuti alle basse densità di popolazione, inducendo fenomeni di erosione della variabilità genetica e di riduzione della <em>fitness> degli individui. L?introduzione di <em>L. europaeusem> può costituire un importante fattore limitante sia per la possibile competizione

  11. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  12. Crystallization of mordenite zeolite with seed addition in reaction mixtures with different SiO{sub 2}/Al{sub 2}O{sub 3} ratios; Cristalizacao da zeolita mordenita com adicao de sementes em meio reacionais com diferentes razoes SiO{sub 2}/Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Cysneiros, O.M.S.; Silva, B.J.B.; Silva, A.O.S.; Alencar, S.L.; Santos, R.B.; Soares, P.F.M.; Mendonca, T.R.D.; Sousa Junior, L.V.; Santos, J.R., E-mail: brunojbarros@hotmail.com [Universidade Federal de Alagoas (UFAL), Maceio (Brazil). Departamento de Engenharia Quimica. Laboratorio de Sintese de Catalisadores

    2016-04-15

    The synthesis of samples of mordenite were performed using the hydrothermal method using two different types of crystallization seed (mordenite and ferrierite), where they were exploited to change some parameters of the synthesis, such as SiO{sub 2}/Al{sub 2}O{sub 3} = 20, 60 and 100 and the ratio OH/SiO{sub 2} = 0.2, 0.3 and 0.4, at different times of crystallization, at a temperature of 170 °C. The samples were characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA/DTA), nitrogen adsorption at -196 °C (BET) and temperature programmed desorption of ammonia (NH{sub 3}-TPD). It was found that the use of the ratio OH/SiO{sub 2} = 0.4, together with the seeds of the most MOR and FER crystalline samples were obtained, demonstrating the critical role of mineralizing agent OH{sup -} in the middle. (author)

  13. Surface crystallization in a Li{sub 2}O-ZrO{sub 2}-SiO{sub 2}-Al{sub 2}O{sub 3} glass; Cristalizacao de superficie em vidro do sistema Li{sub 2}O-ZrO{sub 2}-SiO{sub 2}-Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Antonio Pedro Novaes de; Teixeira, Alexandre Henrique Bortolotto; Venturelli, Hugo Henrique, E-mail: bortolotto_teixeira@yahoo.com.br, E-mail: venturellihugo@gmail.com, E-mail: antonio.pedro@ufsc.br [Universidade Federal de Santa Catarina (VITROCER/PGMAT/UFSC), Florianopolis, SC (Brazil). Laboratorio de Materiais Vitroceramicos; Montedo, Oscar Rubem Klegues, E-mail: oscar.rkm@gmail.com [Universidade do Extremo Sul Catarinense (CERTEC/PPGCEM/UNESC), Criciuma, SC (Brazil). Grupo de Pesquisa em Ceramica Tecnica

    2017-04-15

    Growth kinetics of crystallized surface layer in a LZSA glass composition, 11.7Li{sub 2}O·12.6ZrO{sub 2}·68.6SiO{sub 2}·7.1Al{sub 2}O{sub 3} (wt%), was studied. For the production of the LZSA glass, it was used commercial raw materials (Li{sub 2}CO{sub 3}, ZrSiO{sub 4}, SiO{sub 2}, Al{sub 2}O{sub 3}) which were mixed and melted at 1550 °C for 120 min and then poured into a metallic mold. Samples of the obtained glass were cut and subjected to heat treatments at different temperatures (825 - 925 °C) and times (30 - 150 min) for formation and growth of crystalline layer. Cross-sections of the heat-treated samples were ground and polished such that images of the formed crystallized layers could be visualized and measured by microscopy. Results showed that it is possible to obtain LZSA glasses with crystallized layers formed by β-spodumene, zircon and lithium silicate, which present thicknesses between 13 and 665 μ and grow at rates varying from 0.4 to 4.8 μm/min in the studied temperature range. (author)

  14. Busca de estruturas em grandes escalas em altos redshifts

    Science.gov (United States)

    Boris, N. V.; Sodré, L., Jr.; Cypriano, E.

    2003-08-01

    A busca por estruturas em grandes escalas (aglomerados de galáxias, por exemplo) é um ativo tópico de pesquisas hoje em dia, pois a detecção de um único aglomerado em altos redshifts pode por vínculos fortes sobre os modelos cosmológicos. Neste projeto estamos fazendo uma busca de estruturas distantes em campos contendo pares de quasares próximos entre si em z Â3 0.9. Os pares de quasares foram extraídos do catálogo de Véron-Cetty & Véron (2001) e estão sendo observados com os telescópios: 2,2m da University of Hawaii (UH), 2,5m do Observatório de Las Campanas e com o GEMINI. Apresentamos aqui a análise preliminar de um par de quasares observado nos filtros i'(7800 Å) e z'(9500 Å) com o GEMINI. A cor (i'-z') mostrou-se útil para detectar objetos "early-type" em redshifts menores que 1.1. No estudo do par 131046+0006/J131055+0008, com redshift ~ 0.9, o uso deste método possibilitou a detecção de sete objetos candidatos a galáxias "early-type". Num mapa da distribuição projetada dos objetos para 22 escala. Um outro argumento em favor dessa hipótese é que eles obedecem uma relação do tipo Kormendy (raio equivalente X brilho superficial dentro desse raio), como a apresentada pelas galáxias elípticas em z = 0.

  15. The association between EMS workplace safety culture and safety outcomes.

    Science.gov (United States)

    Weaver, Matthew D; Wang, Henry E; Fairbanks, Rollin J; Patterson, Daniel

    2012-01-01

    Prior studies have highlighted wide variation in emergency medical services (EMS) workplace safety culture across agencies. To determine the association between EMS workplace safety culture scores and patient or provider safety outcomes. We administered a cross-sectional survey to EMS workers affiliated with a convenience sample of agencies. We recruited these agencies from a national EMS management organization. We used the EMS Safety Attitudes Questionnaire (EMS-SAQ) to measure workplace safety culture and the EMS Safety Inventory (EMS-SI), a tool developed to capture self-reported safety outcomes from EMS workers. The EMS-SAQ provides reliable and valid measures of six domains: safety climate, teamwork climate, perceptions of management, working conditions, stress recognition, and job satisfaction. A panel of medical directors, emergency medical technicians and paramedics, and occupational epidemiologists developed the EMS-SI to measure self-reported injury, medical errors and adverse events, and safety-compromising behaviors. We used hierarchical linear models to evaluate the association between EMS-SAQ scores and EMS-SI safety outcome measures. Sixteen percent of all respondents reported experiencing an injury in the past three months, four of every 10 respondents reported an error or adverse event (AE), and 89% reported safety-compromising behaviors. Respondents reporting injury scored lower on five of the six domains of safety culture. Respondents reporting an error or AE scored lower for four of the six domains, while respondents reporting safety-compromising behavior had lower safety culture scores for five of the six domains. Individual EMS worker perceptions of workplace safety culture are associated with composite measures of patient and provider safety outcomes. This study is preliminary evidence of the association between safety culture and patient or provider safety outcomes.

  16. Morphological identification of the Soprano Pipistrelle (<em>Pipistrellus pygmaeusem> Leach, 1825 in Croatia.

    Directory of Open Access Journals (Sweden)

    Igor Pavlinić

    2008-07-01

    Full Text Available Abstract After the discovery of two different phonic types within the common pipistrelle (<em>Pipistrellus pipistrellusem>, mtDNA analysis confirmed the existence of two separate species named as common pipistrelle (<em>P. pipistrellusem> and soprano pipistrelle (<em>P. pygmaeusem>. The discrimination of these two cryptic species using external characters and measures has proved to be somewhat problematic. We examined two colonies of soprano pipistrelle from Donji Miholjac, Croatia. As a result, only two characters proved to be of help for field identification: wing venation (89% of cases and penis morphology and colour for males. The difference in length between the 2nd and 3rd phalanxes of the 3rd finger should be discarded as diagnostic trait between <em>P. pipistrellusem> and <em>P. pygmaeusem> in Croatia. Riassunto Identificazione su basi morfologiche del pipistrello pigmeo (<em>Pipistrellus pygmeausem>, Leach, 1825 in Croazia. A seguito della descrizione di due differenti "tipi fonici" nel pipistrello nano (<em>Pipistrellus pipistrellusem> e della successiva conferma su basi genetiche dell'esistenza di due specie distinte, designate come pipistrello nano (<em>P. pipistrellusem> e pipistrello pigmeo (<em>P. pygmaeusem>, la distinzione delle due specie in base a caratteristiche morfologiche esterne si è dimostrata un problema di difficile soluzione. Sulla base delle caratteristiche distintive e delle differenze biometriche proposte da altri Autori, sono state esaminate due colonie di pipistrello pigmeo a Donji Miholjac, in Croazia. I risultati ottenuti evidenziano che, tra tutti i potenziali caratteri sinora proposti, solo due risultano utili per un'identificazione diretta sul campo: la venatura delle ali, risultata utile alla discriminazione nell'89% degli esemplari analizzati, e la colorazione e morfologia del pene nei maschi. La

  17. Design of Higher-<em>k> and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Yi Zhao

    2012-08-01

    Full Text Available High permittivity (<em>k> gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-<em>k> gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a higher permittivity for popular high-<em>k> oxides, like HfO2 and La2O3. The second one is crystallization behavior. Although it’s still under the debate whether an amorphous film is definitely better than ploy-crystallized oxide film as a gate oxide upon considering the crystal boundaries induced leakage current, the crystallization behavior should be well understood for a high-<em>k> gate oxide because it could also, to some degree, determine the permittivity of the high-<em>k> oxide. Finally, some high-<em>k> gate oxides, especially rare earth oxides (like La2O3, are not stable in air and very hygroscopic, forming hydroxide. This topic has been well investigated in over the years and significant progresses have been achieved. In this paper, I will intensively review the most recent progresses of the experimental and theoretical studies for preparing higher-<em>k> and more stable, in terms of hygroscopic tolerance and crystallization behavior, Hf- and La-based ternary high-<em>k> gate oxides.

  18.   <em>At si myggen fra eller at sluge kamelen? em> />

    DEFF Research Database (Denmark)

    Steen, Oxana

    2006-01-01

    Både russisk og dansk er fulde af udtryk, som stammer fra Bibelen. Nogle udtryk er fælles, men bruges alligevel ikke helt ens. Andre udtryk har udviklet sig forskelligt i de to sptog. Artiklen indeholder en analyse af russiske og danske idiomer af evangelisk oprindelse og indeholder et alternativt...

  19. Evaluation of <em>HER2em> Gene Amplification in Breast Cancer Using Nuclei Microarray <em>in em>S>itu em>Hybridization

    Directory of Open Access Journals (Sweden)

    Xuefeng Zhang

    2012-05-01

    Full Text Available Fluorescence<em> em>>in situ em>hybridization (FISH assay is considered the “gold standard” in evaluating <em>HER2/neu (HER2em> gene status. However, FISH detection is costly and time consuming. Thus, we established nuclei microarray with extracted intact nuclei from paraffin embedded breast cancer tissues for FISH detection. The nuclei microarray FISH (NMFISH technology serves as a useful platform for analyzing <em>HER2em> gene/chromosome 17 centromere ratio. We examined <em>HER2em> gene status in 152 cases of invasive ductal carcinomas of the breast that were resected surgically with FISH and NMFISH. <em>HER2em> gene amplification status was classified according to the guidelines of the American Society of Clinical Oncology and College of American Pathologists (ASCO/CAP. Comparison of the cut-off values for <em>HER2em>/chromosome 17 centromere copy number ratio obtained by NMFISH and FISH showed that there was almost perfect agreement between the two methods (κ coefficient 0.920. The results of the two methods were almost consistent for the evaluation of <em>HER2em> gene counts. The present study proved that NMFISH is comparable with FISH for evaluating <em>HER2em> gene status. The use of nuclei microarray technology is highly efficient, time and reagent conserving and inexpensive.

  20. O conhecimento de si como possibilidade para a transformação de si e do coletivo

    Directory of Open Access Journals (Sweden)

    Rosemary Silva da Silveira

    1999-12-01

    Full Text Available Para promover a discussão e reflexão em grupo sobre o significado do trabalho da enfermagem numa unidade cirúrgica e diante da constatação da necessidade dos trabalhadores de enfermagem conhecerem-se mais a si e entre si, como participantes e construtores de um trabalho coletivo, implementou-se uma prática, entendida como uma tecnologia do eu, que favorecesse o conhecimento de si e do outro na tentativa de transformar a si e, conseqüentemente, o coletivo. A partir da exposição verbal e individual, ao grupo, da percepção de si, propôs-se o registro escrito de qualidades e conselhos que poderiam ser atribuídos a cada membro da equipe de enfermagem. Sistematizadas as contribuições, cada participante recebeu, individualmente, o conjunto de percepções do grupo sobre si. Tais estratégias constituíram-se em espaços mobilizadores para o diálogo, a reflexão crítica e uma maior aproximação entre os trabalhadores, representando uma possibilidade de cuidado de si e de aperfeiçoamento pessoal e grupal.

  1. A New Natural Lactone from <em>Dimocarpus> <em>longan> Lour. Seeds

    Directory of Open Access Journals (Sweden)

    Zhongjun Li

    2012-08-01

    Full Text Available A new natural product named longanlactone was isolated from <em>Dimocarpus> <em>longan> Lour. seeds. Its structure was determined as 3-(2-acetyl-1<em>H>-pyrrol-1-yl-5-(prop-2-yn-1-yldihydrofuran-2(3H-one by spectroscopic methods and HRESIMS.

  2. Reference Gene Selection in the Desert Plant <em>Eremosparton songoricuem>m>

    Directory of Open Access Journals (Sweden)

    Dao-Yuan Zhang

    2012-06-01

    Full Text Available <em>Eremosparton songoricum em>(Litv. Vass. (<em>E. songoricumem> is a rare and extremely drought-tolerant desert plant that holds promise as a model organism for the identification of genes associated with water deficit stress. Here, we cloned and evaluated the expression of eight candidate reference genes using quantitative real-time reverse transcriptase polymerase chain reactions. The expression of these candidate reference genes was analyzed in a diverse set of 20 samples including various <em>E. songoricumem> plant tissues exposed to multiple environmental stresses. GeNorm analysis indicated that expression stability varied between the reference genes in the different experimental conditions, but the two most stable reference genes were sufficient for normalization in most conditions.<em> EsEFem> and <em>Esα-TUB> were sufficient for various stress conditions, <em>EsEF> and <em>EsACT> were suitable for samples of differing germination stages, and <em>EsGAPDH>and <em>Es>UBQ em>were most stable across multiple adult tissue samples. The <em>Es18Sem> gene was unsuitable as a reference gene in our analysis. In addition, the expression level of the drought-stress related transcription factor <em>EsDREB2em>> em>verified the utility of<em> E. songoricumem> reference genes and indicated that no single gene was adequate for normalization on its own. This is the first systematic report on the selection of reference genes in <em>E. songoricumem>, and these data will facilitate future work on gene expression in this species.

  3. Espectros biológicos florísticos de Campos Rupestres de afloramento e Campos Úmidos diferem entre si e em relação ao Espectro Biológico Normal de Raunkiaer. Floristic biological spectra of Rock outcrops and Wet grasslands differ between themselves and in relation to the Raunkiaer’s Normal Biological Spectrum.

    Directory of Open Access Journals (Sweden)

    Natalia de Oliveira COSTA

    2012-12-01

    Full Text Available A distribuição de frequência de classes de formas de vida em uma flora, conhecida como espectro biológico florístico, varia em função das condições climáticas e edáficas em que as plantas se desenvolvem. Neste trabalho comparamos os espectros biológicos médios (n = 3 de equivalentes a Campo Rupestre de afloramento e a Campo Úmido no Estado de São Paulo na expectativa de encontrar diferenças significativas entre os dois tipos de comunidade. Os Campos Rupestres (G-corrigido = 23,41; p-valor = 0,0001 e os Campos Úmidos (G-corrigido = 80,34; p < 0,0001 diferiram do Espectro Biológico Normal de Raunkiaer, bem como diferenciaram-se entre si (χ2 = 24,23; p < 0,0001. Uma Análise de Correspondência Distendida separou Campos Rupestres de Campos Úmidos devido às maiores frequências de fanerófitos nos primeiros e de hemicriptófitos e terófitos nos últimos. Sugerimos como hipóteses que os micro-habitats favoráveis ao desenvolvimentode fanerófitos sejam mais comuns nos Campos Rupestres de afloramento do que nos Campos Úmidos, ocorrendo o contrário com os micro-habitats favoráveis aos hemicriptófitos. Esta forma de vida pode apresentar melhor ajustamento ao encharcamento do solo do que os caméfitos e geófitos. A estratégia de escape apresentada pelos terófitos seria pouco eficiente em Campos Rupestres de afloramento devido à escassez de solo para proteção das sementes. The frequency distribution of life forms in a flora, called floristic biological spectrum, varies according to the climatic and edaphic conditions under which plants grow. In this work we compared the average (n = 3 biological spectra of Rock outcrop and Wet grassland like communities in São Paulo state expecting to find significant differences between the two community types. Rock outcrops (G-corrected = 23.41; p-value = 0.0001 and Wet grasslands (G-corrected = 80.34; p < 0.0001 differed from the Raunkiaer’s Normal Biological Spectrum, as did between

  4. Interações silício-fósforo em solos cultivados com eucalipto em casa de vegetação

    Directory of Open Access Journals (Sweden)

    Carvalho Rui

    2001-01-01

    Full Text Available Este trabalho teve o objetivo de avaliar as interações Si-P em dois solos, por meio do estado nutricional de P em mudas de Eucalyptus grandis sob efeito de aplicação de Si. Foram conduzidos dois experimentos em casa de vegetação, utilizando como substratos as camadas superficiais (0-20 cm de profundidade de um Latossolo Vermelho-Escuro fase cerrado e de um Cambissolo fase campo cerrado da zona fisiográfica Campos das Vertentes, MG . Cada solo foi submetido a três incubações seqüenciais: CaCO3 + MgCO3 para manter o pH em torno de 6, fertilização básica, incluindo o P em dose única, para manter 0,2 mg L-1 de P em solução e seis doses de Si (CaSiO3 definidas com base na dose de P. Foram avaliados a produção de matéria seca da parte aérea (MSPA, conteúdo de P e Si na MSPA e frações fosfatadas e fosfatase ácida em folhas apicais aos 60, 90 e 120 dias após o transplantio das mudas para os vasos. Ajustaram-se superfícies de resposta para essas variáveis em razão das doses de Si e das épocas. Mudas cultivadas no Cambissolo tiveram ganho de 15,25% no conteúdo de P na MSPA. Frações fosfatadas e atividade da fosfatase ácida em plantas não mostraram sensibilidade para avaliar a interação Si-P nos dois solos.

  5. Synthesis, Crystal Structure and Luminescent Property of Cd (II Complex with <em>N-Benzenesulphonyl-L>-leucine

    Directory of Open Access Journals (Sweden)

    Xishi Tai

    2012-09-01

    Full Text Available A new trinuclear Cd (II complex [Cd3(L6(2,2-bipyridine3] [L =<em> Nem>-phenylsulfonyl-L>-leucinato] has been synthesized and characterized by elemental analysis, IR and X-ray single crystal diffraction analysis. The results show that the complex belongs to the orthorhombic, space group<em> Pem>212121 with<em> aem> = 16.877(3 Å, <em>b> em>= 22.875(5 Å, <em>c em>= 29.495(6 Å, <em>α> em>= <emem>= <emem>= 90°, <em>V> em>= 11387(4 Å3, <em>Z> em>= 4, <em>Dc>= 1.416 μg·m−3, <emem>= 0.737 mm−1, <em>F> em>(000 = 4992, and final <em>R>1 = 0.0390, <em>ωR>2 = 0.0989. The complex comprises two seven-coordinated Cd (II atoms, with a N2O5 distorted pengonal bipyramidal coordination environment and a six-coordinated Cd (II atom, with a N2O4 distorted octahedral coordination environment. The molecules form one dimensional chain structure by the interaction of bridged carboxylato groups, hydrogen bonds and p-p interaction of 2,2-bipyridine. The luminescent properties of the Cd (II complex and <em>N-Benzenesulphonyl-L>-leucine in solid and in CH3OH solution also have been investigated.

  6. O mito do duplo em retratos

    OpenAIRE

    Cesaro, Patrícia Souza Silva

    2012-01-01

    O mito do duplo faz parte de um conjunto de mitos dos mais antigos, que permeiam o imaginário do homem desde a sua própria existência. Tem por principais manifestações os casos de sósias, gêmeos idênticos, o ver a si mesmo em outro, a dualidade. O termo consagrado para designar o duplo, cunhado pelo escritor alemão Jean-Paul Richter, é doppelgänger, e significa aquele que caminha ao lado, o companheiro de estrada. Tem a ver com uma experiência de si na alteridade. Alguns exempl...

  7. SI units in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, P S [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1978-11-01

    The proposal of the International Commission on Radiation Units and Measurements that the special units of radiation and radioactivity-roentgen, rad, rem and curie-be replaced by the International System (SI) of Units has been accepted by international bodies. This paper reviews the resons for introducing the new units and their features. The relation between the special units and the corresponding SI units is discussed with examples. In spite of anticipated difficulties, the commission recommends a smooth and efficient changeover to the SI units in ten years.

  8. A new karyotype of <em>Calomyscus> from the Khorasan Province, Iran

    Directory of Open Access Journals (Sweden)

    Esmaeeli Somayeh

    2008-07-01

    Full Text Available Abstract We report a new karyotype of <em>Calomyscus> from two localities of the Khorasan Province (Aghdarband, 36° 11’ 3”N, 60° 44’ 6” E and Khajemorad, 36° 8’ 5” N, 59° 41’ 58” E. Chromosomes were examined by conventional staining and C-banding techniques. The diploid chromosome number (2n and the fundamental autosomal arm number (FNa were 44 and 60 respectively. The autosomal set consisted of 12 pairs of telocentrics, 5 pairs of acrocentrics and 4 pairs of sub-metacentrics. Both heterosomes were small telocentrics. Riassunto Un nuovo cariotipo del genere <em>Calomyscus> dalla provincia di Khorasan, Iran. Si descrive un nuovo cariotipo appartenente al genere <em>Calomyscus>, scoperto in due località della provincia di Khorasan (Aghdarband, 36° 11’ 3”N, 60° 44’ 6” E e Khajemorad, 36° 8’ 5” N, 59° 41’ 58” E. I cromosomi sono stati analizzati con le tecniche standard di colorazione e bandeggio. Il numero diploide di cromosomi (2n e il numero fondamentale di bracci autosomici sono risultati pari a 44 e 60 rispettivamente. Il set di cromosomi autosomici è composto da 12 paia di telocentrici, 5 di acrocentrici e 4 di sub-metacentrici. Entrambi i cromosomi sessuali si presentano come piccoli telocentrici.

  9. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  10. Alimentazione di <em>Marmota marmotaem> in praterie altimontane delle dolomiti bellunesi

    Directory of Open Access Journals (Sweden)

    Alessandro Rudatis

    2006-03-01

    Full Text Available Abstract The diet of <em>Marmota marmotaem> in the mountain prairie of south-eastern Italian Alps. Diet composition of two family groups of alpine marmots was investigated in two areas of the Agordino’s Dolomites (Italian Alps in June-September 2001, by means of microscopic analysis of faeces and of direct observation of feeding activity. During the whole period of activity, a high consume of Angiosperms was confirmed, especially plants in flower; among them the “graminoids” seemed to play an important role only during the initial part of the active period. Generally vegetative parts predominated over flowers. The ingestion of animal preys was not confirmed by the analysis of droppings. Comparing diet composition of the two groups, Graminaceae (<em>Poa>, <em>Phleum>, Compositae (<em>Achillea>, Cyperaceae/Juncaceae, Leguminosae (<em>Anthyllis>, Rosaceae, and Labiatae (<em>Prunella>, <em>Stachys> formed the bulk of marmot diet in the study areas. Diet showed low diversity considering the abundance of plant species in the surrounding environment. Food resources were probably used in relation to their easy digestibility, with a high content in proteins, sugar and water. The knowledge of vegetation features in relation to marmot trophic habits can represent a useful tool for the management of this species. Riassunto Il regime alimentare di due gruppi di Marmotta alpina è stato studiato in giugno-settembre 2001 in due aree delle Dolomiti agordine (SE Italia, attraverso l’analisi microscopica delle feci e l’osservazione diretta dell’attività alimentare. Durante tutto il periodo di attività si è notato un forte consumo di Angiosperme, specialmente piante a fiore, mentre le ”graminoidi” sembra giochino un ruolo importante all’inizio della stagione. In generale le parti vegetali predominano sui fiori. L’ingestione di prede animali non è stata

  11. Using compound SiO{sub 2}(62-68)-MgO+CaO(29-39) in the protections of ceramics of steel company to replace the CaO-Al{sub 2}O{sub 3}-SiO{sub 2} compound; Utilizacao do composto SiO{sub 2}(62-68)-MgO+CaO(29-39) nas protecoes ceramicas de empresa siderurgica em substituicao ao composto CaO-Al{sub 2}O{sub 3}-SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Nogueira, Anderson Carvalho; Silva, Paula Cipriano da; Vernilli Junior, Fernando; Santos, Claudinei dos; Magnago, Roberto de Oliveira [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Lima, Leonardo Moreira de [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-12-15

    This article describes the use of protective ceramic composed of SiO{sub 2}(62-68)-MgO + CaO(29-39) in the frontal region of the machines that inject mass refractory to stop racing pig iron and slag liquid in blast furnaces. The new protection model (prototype) showed a annual saving of approximately R$ 32,000.00 compared to the compound previously used CaO-Al{sub 2}O{sub 3}-SiO{sub 2}. Also had a lower toxicity, as it has in its morphology least amount of fiber. These fibers when inhaled cause damage to internal tissues of the lungs is harmful to health. There maintenance rates of production, since in all samples tested the new ceramic protection, the front part was preserved allowing the refractory mass injection quantity and pressure required for reconstitution of the length of the bore which removes iron and slag inside the high oven, allowing for a larger internal volume to produce more. The protection models were produced by Morganite-Brazil. The morphology and crystallographic characterization were characterized by Scanning Electron Microscopy and X-ray diffraction, respectively. (author)

  12. Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI

    Directory of Open Access Journals (Sweden)

    John E. Cunningham

    2012-04-01

    Full Text Available We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical <em>p-i-n> diodes exhibit very low dark current density of 5 mA/cm2 at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics.

  13. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  14. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  15. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  16. Neonatal Phosphate Nutrition Alters <em>in em>Vivo> and <em>in em>Vitro> Satellite Cell Activity in Pigs

    Directory of Open Access Journals (Sweden)

    Chad H. Stahl

    2012-05-01

    Full Text Available Satellite cell activity is necessary for postnatal skeletal muscle growth. Severe phosphate (PO4 deficiency can alter satellite cell activity, however the role of neonatal PO4 nutrition on satellite cell biology remains obscure. Twenty-one piglets (1 day of age, 1.8 ± 0.2 kg BW were pair-fed liquid diets that were either PO4 adequate (0.9% total P, supra-adequate (1.2% total P in PO4 requirement or deficient (0.7% total P in PO4 content for 12 days. Body weight was recorded daily and blood samples collected every 6 days. At day 12, pigs were orally dosed with BrdU and 12 h later, satellite cells were isolated. Satellite cells were also cultured <em>in vitroem> for 7 days to determine if PO4 nutrition alters their ability to proceed through their myogenic lineage. Dietary PO4 deficiency resulted in reduced (<em>P> < 0.05 sera PO4 and parathyroid hormone (PTH concentrations, while supra-adequate dietary PO4 improved (<em>P> < 0.05 feed conversion efficiency as compared to the PO4 adequate group. <em>In vivoem> satellite cell proliferation was reduced (<em>P> < 0.05 among the PO4 deficient pigs, and these cells had altered <em>in vitroem> expression of markers of myogenic progression. Further work to better understand early nutritional programming of satellite cells and the potential benefits of emphasizing early PO4 nutrition for future lean growth potential is warranted.

  17. Interação silício e alumínio em plantas de arroz de terras altas cultivadas em solo alumínico

    Directory of Open Access Journals (Sweden)

    Lucas Barbosa de Freitas

    2012-04-01

    Full Text Available Solos com altos teores de Al tóxico podem causar diversos danos às plantas e, como consequência, diminuir sua produtividade; assim, seu manejo torna-se imprescindível para obter maiores produtividades, e o Si pode ser alternativa para diminuir a toxidez por Al em plantas. O objetivo deste trabalho foi avaliar a interação entre Si e Al em plantas de arroz de terras altas cultivadas em solo naturalmente alumínico de textura média arenosa. O delineamento experimental utilizado foi o de blocos inteiramente casualizados, dispostos em esquema fatorial 2 x 5 com quatro repetições. Os tratamentos empregados foram dois cultivares de arroz de terras altas: BRS Talento (não tolerante ao Al, moderno e Guarani (tolerante ao Al3+, tradicional, além de cinco doses de Si (0, 30, 60, 90 e 120 mg dm-3 adicionadas ao solo. O Si fornecido ao solo contribuiu amenizando a toxidez por Al em ambos os cultivares, porém só houve acréscimo em produtividade no cultivar BRS Talento. Houve correlação positiva para produtividade de grãos do cultivar BRS Talento e teor de Si nas folhas; já o teor de Al nas folhas correlacionou-se com a produtividade de forma negativa; e também houve correlação negativa entre os teores de Si e Al nas folhas, indicando que há interação entre Si e Al em plantas de arroz.

  18. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  19. Constituents from <em>Vigna em>vexillata> and Their Anti-Inflammatory Activity

    Directory of Open Access Journals (Sweden)

    Guo-Feng Chen

    2012-08-01

    Full Text Available The seeds of <em>Vigna em>genus are important food resources and there have already been many reports regarding their bioactivities. In our preliminary bioassay, the chloroform layer of methanol extracts of<em> V. vexillata em>demonstrated significant anti-inflammatory bioactivity. Therefore, the present research is aimed to purify and identify the anti-inflammatory principles of <em>V. vexillataem>. One new sterol (1 and two new isoflavones (2,3 were reported from the natural sources for the first time and their chemical structures were determined by the spectroscopic and mass spectrometric analyses. In addition, 37 known compounds were identified by comparison of their physical and spectroscopic data with those reported in the literature. Among the isolates, daidzein (23, abscisic acid (25, and quercetin (40 displayed the most significant inhibition of superoxide anion generation and elastase release.

  20. Caratterizzazione genetica di alcune popolazioni di cinghiale (<em>Sus scrofaem> dell'Italia meridionale

    Directory of Open Access Journals (Sweden)

    M.F. Caliendo

    2003-10-01

    Full Text Available In Italia il Cinghiale ha subito varie oscillazioni numeriche per immissioni d?esemplari provenienti soprattutto dall'est europeo o da paesi vicini (Massei & Toso, 1993 e incrocio con esemplari di maiale domestico, allevato allo stato brado o semi brado in molte zone d'Italia (Apollonio <em>et al.em>, 1988. Questi fattori sono stati responsabili anche di un impoverimento genetico della forma autoctona italiana <em>Sus scrofa meridionalisem> e <em>majori> che sembrano persistere solo in Sardegna e Maremma (Apollonio <em>et al.em>, 1988. Tra le riserve in cui si ritiene possano trovarsi popolazioni ancora integre, figura la tenuta presidenziale di Castelporziano (Roma. Prendendo spunto da questo lavoro, con il nostro contributo riportiamo i risultati, a livello genetico, della ibridazione con il maiale da parte di cinghiali della Campania, basato sul DNA microsatellite di 4 loci polimorfi. Sono state studiate 9 popolazioni (allevate e libere, usando per riferimenti maiali allo stato brado e cinghiali di Castelporziano. Dall?analisi delle frequenze alleliche è stato eseguito il <em>test di assignmentem> (implementato in una sub routine del software Arlequin 2.0 che individua la possibile origine di un individuo, rispetto ad una rosa di probabili popolazioni di riferimento (Paetkau <em>et al.em>, 1998. Con i risultati del test di assignment si è costruito il grafico <em>log-log genotypeem>, rappresentato da un piano individuato dalle due variabili di riferimento (cinghiale e maiale brado. Le popolazioni esaminate evidenziano una generalizzata distribuzione a cavallo tra i due riferimenti con individui geneticamente simili al cinghiale ed altri al maiale. Questa ripartizione simmetrica è molto evidente nel caso dei cinghiali catturati a Punta Licosa e in quelli dell?allevamento di Polla. La distribuzione dei genotipi sul piano è spesso dispersa, ad eccezione dei cinghiali della Valle del Vento e quelli di Monteverde (individui

  1. Vivências em espaços educativos: constituição de identidades homossexuais em homens adultos

    OpenAIRE

    Cechin, Andréa Forgiarini

    2006-01-01

    Esta pesquisa problematiza a relação entre a constituição das identidades homossexuais de homens adultos e suas vivências em espaços educativos formais, não formais e informais. Como ponto de partida para desenvolver o estudo, foram formuladas questões que focalizam percepções e sentimentos desses homens adultos em relação a si próprios e aos outros, tendo em vista suas vivências nesses espaços educativos e, especialmente, suas experiências de discriminação e resistência. Apoia-se teoricament...

  2. COMPETÊNCIA EM MEDICINA

    Directory of Open Access Journals (Sweden)

    Hélio Teixeira MD.

    2005-01-01

    Full Text Available Competência no exercício da medicina depende de um processo evolutivo ao longo da vida do profissional, processo este fundamentado em eficiência, experiência e em princípios éticos. A eficiência depende da cultura médica, de habilidades técnicas e relacionamento interpessoal com o paciente. A experiência ao longo da vida vai refinando o médico, favorecendo o evolver do conhecimento e da sabedoria vivencial. Finalmente, a ética médica se fundamenta na justiça, compaixão e amor ao próximo. Didaticamente, distinguimos 3 fases da evolução profissional do médico: a infância profissional ou visão linear: o médico se restringe em geral ao atendimento da doença, negligenciando o doente. É quase exclusivamente técnico e tem percepção acanhada da medicina-arte. b Maturidade profissional ou visão humanística: resultado de evolução da personalidade, da cultura e da experiência do médico, agora voltado para o doente com sua doença. c Excelência profissional ou visão holística: estágio máximo que se pode alcançar, quando o médico vislumbra a si e ao seu cliente em todas suas dimensões integradas e atua como mestre, procurando despertar no paciente condições próprias de cura, oriundas de sua essência. Conclui-se que exercer medicina com competência significa desempenhar adequadamente a ciência e a arte médica.

  3. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  4. SI: The Stellar Imager

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  5. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  6. Osservazioni in cattività sul ciclo stagionale del peso corporeo e sull'efficienza digestiva di <em>Pipistrellus kuhliiem> e <em>Hypsugo saviiem> (Chiroptera: Verspertilionidae

    Directory of Open Access Journals (Sweden)

    Gianna Dondini

    2004-06-01

    una temperatura tra i 17° e i 22°C. Ogni sera sono stati pesati, prima della somministrazione di cibo (vermi della farina, <em>Tenebrio molitorem> e acqua, con una bilancia elettronica di precisione. L'efficienza digestiva, calcolata su materiale essiccato, è risultata di circa il 90% per entrambe le specie. Nell'arco di circa sei mesi, l'incremento medio del peso è risultato del 450% per <em>P. kuhliiem> e del 280% per <em>H. saviiem>. Il processo di accumulo di grasso sembra essere più rapido in <em>P. kuhliiem>. Per entrambe le specie si evidenzia un ciclo circannuale del peso.

  7. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  8. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  9. Momentos em freios e em embraiagens

    OpenAIRE

    Mimoso, Rui Miguel Pereira

    2011-01-01

    Dissertação para obtenção do Grau de Mestre em Mestrado Integrado em Engenharia Mecânica Nesta dissertação reúnem-se os modelos de cálculo utilizados na determinação dos momentos em freios e em embraiagens. Neste trabalho consideram-se os casos de freios e embraiagens de atrito seco e atrito viscoso. Nos freios de atrito viscoso são considerados casos em que as características dos fluidos não são induzidas, e outros em que são induzidas modificações a essas mesmas características. São a...

  10. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  11. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  12. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  13. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  14. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  15. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  16. Dermatoses em renais cronicos em terapia dialitica

    Directory of Open Access Journals (Sweden)

    Luis Alberto Batista Peres

    2014-03-01

    Full Text Available Objetivo: As desordens cutâneas e das mucosas são comuns em pacientes em hemodiálise a longo prazo. A diálise prolonga a expectativa de vida, dando tempo para a manifestação destas anormalidades. Os objetivos deste estudo foram avaliar a prevalência de problemas dermatológicos em pacientes com doença renal crônica (DRC em hemodiálise. Métodos: Cento e quarenta e cinco pacientes com doença renal crônica em hemodiálise foram estudados. Todos os pacientes foram completamente analisados para as alterações cutâneas, de cabelos, mucosas e unhas por um único examinador e foram coletados dados de exames laboratoriais. Os dados foram armazenados em um banco de dados do Microsolft Excel e analisados por estatística descritiva. As variáveis contínuas foram comparadas pelo teste t de Student e as variáveis categóricas utilizando o teste do qui-quadrado ou o teste Exato de Fischer, conforme adequado. Resultados: O estudo incluiu 145 pacientes, com idade média de 53,6 ± 14,7 anos, predominantemente do sexo masculino (64,1% e caucasianos (90,0%. O tempo médio de diálise foi de 43,3 ± 42,3 meses. As principais doenças subjacentes foram: hipertensão arterial em 33,8%, diabetes mellitus em 29,6% e glomerulonefrite crônica em 13,1%. As principais manifestações dermatológicas observadas foram: xerose em 109 (75,2%, equimose em 87 (60,0%, prurido em 78 (53,8% e lentigo em 33 (22,8% pacientes. Conclusão: O nosso estudo mostrou a presença de mais do que uma dermatose por paciente. As alterações cutâneas são frequentes em pacientes em diálise. Mais estudos são necessários para melhor caracterização e manejo destas dermatoses.

  17. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  18. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  19. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  20. O (descuidado de si do profissional de enfermagem

    Directory of Open Access Journals (Sweden)

    Maria Aparecida Baggio

    2008-12-01

    Full Text Available Este é um estudo exploratório descritivo de abordagem qualitativa que objetivou compreender o significado do (descuidado de si dos profissionais de enfermagem. Os sujeitos selecionados são auxiliares e técnicos de enfermagem e enfermeiros atuantes em rede pública e particular de saúde. Os dados foram coletados por meio de entrevista estruturada para a caracterização dos sujeitos e entrevista semi-estruturada para conhecer os posicionamentos individuais sobre o tema em questão. O registro dos dados foi audiogravado, sendo os mesmos, posteriormente, transcritos, conferidos e submetidos à análise. Assim, o trabalho foi dividido em categorias e subcategorias que se configuraram em capítulos. Num primeiro momento analiso o significado do cuidado do outro, e procuro demonstrar, nas atitudes do profissional, o cuidado verbal e não-verbal imbuído de empatia, a sensibilidade com a dor do outro e, ainda, o envolvimento com o cliente como atitude terapêutica. Num momento posterior, busco trazer o significado do (descuidado de si, que compreende os aspectos sócio-educativo-cultural, atenção e convivência com a família e amigos, valorização da interioridade do eu. A atenção aos aspectos físicos e estéticos foi mencionada como cuidado de si e, o inverso, foi lembrado como descuidado. O fator tempo foi ressaltado como um grande problema ao descuido de si, a alimentação não contempla o equilíbrio e a atenção que merece, o profissional faz uso constante da automedicação e o trabalho influencia para o não cuidado de si. Na seqüência, trato do (descuidado de si enquanto cuida do outro que confirma a negligência do profissional de enfermagem ao cuidado de si enquanto cuida do outro. E, na última parte deste trabalho, procuro discorrer sobre a enfermagem e suas relações na construção do profissional ressaltando a conjugação e a interdependência do trabalho em enfermagem e a vida pessoal dos sujeitos. Nesta rela

  1. EM International. Volume 1

    Energy Technology Data Exchange (ETDEWEB)

    1993-07-01

    It is the intent of EM International to describe the Office of Environmental Restoration and Waste Management`s (EM`s) various roles and responsibilities within the international community. Cooperative agreements and programs, descriptions of projects and technologies, and synopses of visits to international sites are all highlighted in this semiannual journal. Focus on EM programs in this issue is on international collaboration in vitrification projects. Technology highlights covers: in situ sealing for contaminated sites; and remote sensors for toxic pollutants. Section on profiles of countries includes: Arctic contamination by the former Soviet Union, and EM activities with Germany--cooperative arrangements.

  2. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  3. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  4. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  5. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  6. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  7. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  8. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  9. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  10. Microsatellite Loci in the Gypsophyte <em>Lepidium subulatum em>(Brassicaceae, and Transferability to Other <em>Lepidieae>

    Directory of Open Access Journals (Sweden)

    José Gabriel Segarra-Moragues

    2012-09-01

    Full Text Available Polymorphic microsatellite markers were developed for the Ibero-North African, strict gypsophyte <em>Lepidium subulatumem> to unravel the effects of habitat fragmentation in levels of genetic diversity, genetic structure and gene flow among its populations. Using 454 pyrosequencing 12 microsatellite loci including di- and tri-nucleotide repeats were characterized in <em>L. subulatumem>. They amplified a total of 80 alleles (2–12 alleles per locus in a sample of 35 individuals of <em>L. subulatumem>, showing relatively high levels of genetic diversity, <em>H>O = 0.645, <em>H>E = 0.627. Cross-species transferability of all 12 loci was successful for the Iberian endemics <em>Lepidium cardaminesem>, <em>Lepidium stylatumem>, and the widespread, <em>Lepidium graminifoliumem> and one species each of two related genera, <em>Cardaria drabaem> and <em>Coronopus didymusem>. These microsatellite primers will be useful to investigate genetic diversity, population structure and to address conservation genetics in species of <em>Lepidium>.

  11. Study of application of Si{sub 2} and TiO{sub 2} nanofluids in electric oil transformers for performance analysis of thermal conductivity and dielectric rigidity; Estudo da aplicação de nanofluidos de SiO{sub 2} e TiO{sub 2} em transformadores elétricos a óleo para análise de desempenho da condutividade térmica e rigidez dielétrica

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Daniel R.P.; Oliveira, Otávio L. de; Rocha, Marcelo da S., E-mail: daniel.lopes@ipen.br, E-mail: otavioluis@ipen.br, E-mail: msrocha@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    Electric transformers are essential equipment in the distribution of electrical energy as they are used for the continuous supply of electricity. For this reason it is important to study the possibilities of improving your insulation and cooling systems. The application of nanofluids in insulating mineral oils, which have a cooling and electrical insulation function, is a relevant issue in this area. In this work, the characteristics of the base mineral oil used in electric transformers with colloidal samples (nanofluids) made with the same base oil are compared using different concentrations of SiO{sub 2} and TiO{sub 2} nanoparticles. The characteristics of thermal conductivity and dielectric strength of nanofluid depend on nanoparticle concentrations, but the fluid must maintain all the insulation characteristics to be used in electrical transformers. The analysis will be performed through computational simulations using FEMM 2D software, applying its thermal conductivity module. The input data were taken from the characterization of samples produced with different concentrations of SiO{sub 2} and TiO{sub 2} nanoparticles (using the same mineral base oil). The parameters were applied in a computational model of a 50 kVA transformer, with usual geometry and natural circulation of oil (by convection) referencing electric transformers used in the market for energy conversion. This paper presents some of the results of a study of the dielectric properties and thermal conductivity of a mineral oil based nanofluid.

  12. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2006-01-01

    Useful tools for determining absolute ages of sediments deposited within the last c. 100 years include 210 Pb, 137 Cs, and bomb radiocarbon. Cosmogenic 32 Si, with a half life of c. 140 years, can be applied in the age range 30-1000 years and is ideally suited for this time period. Detection of 32 Si is, however, very difficult due to its extremely low natural specific activity, and the vast excess of stable silicon (i.e. low 32 Si/Si ratio). 23 refs

  13. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  14. Oscillations in the fusion of the Si + Si systems

    International Nuclear Information System (INIS)

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  15. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  16. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  17. Studio e conservazione di una colonia riproduttiva di <em>Myotis emarginatusem> in Toscana

    Directory of Open Access Journals (Sweden)

    Paolo Agnelli

    2003-10-01

    Full Text Available <em>Myotis emarginatusem> (Chiroptera, Vespertilionidae utilizza frequentemente gli edifici come rifugio estivo, sia per il riposo diurno che per la riproduzione. Negli anni 1996-2003, nel corso di indagini faunistiche sul territorio toscano, questa specie è stata rilevata nel 26% dei casi su 76 edifici rurali risultati occupati da pipistrelli e rappresenta ben il 50% degli esemplari rilevati. Il numero di esemplari di <em>M. emarginatusem> in tali rifugi varia da 1 a 150 animali. Un edificio però può rendersi facilmente indisponibile per modificazioni nell?utilizzo da parte dell?uomo: ma cosa succede agli animali che si trovano improvvisamente senza casa? E quanto si può accrescere annualmente una colonia quando non viene disturbata? Nel 1997 nella Riserva Naturale Provinciale di Ponte a Buriano e Penna (AR, rilevammo una colonia riproduttiva di <em>Myotis emarginatusem> stimata in circa 60 esemplari. Il rifugio estivo utilizzato fino al 2002 è costituito da una casa disabitata. Confrontando le stime effettuate dal 1997 al 2001 possiamo valutare l?accrescimento numerico della colonia: a partire dai circa 60 animali si è raggiunta la consistenza di 75 esemplari nel 2001, ossia circa il 25% in 5 anni (5% annuo di media. I conteggi sono stati effettuati a vista da almeno 3 persone, da breve distanza e in buona luce, ma poiché in questa specie gli esemplari si appendono alle travi addossandosi uno sopra l?altro, è impossibile effettuare un vero conteggio. Nell?estate 2001 abbiamo condotto una ricerca più accurata sull?utilizzo del rifugio: dai rilievi di un rilevatore di passaggio all?infrarosso e soprattutto dalle riprese di una videocamera, risulta che il numero degli esemplari era stato fortemente sottostimato: gli esemplari erano, infatti, ben 150 (femmine, ossia il doppio di quanto stimato sia pure in condizioni favorevoli. A Giugno (2001 abbiamo registrato la nascita di 101 piccoli, il cui tasso di mortalità prima dell

  18. Marketing em moda

    OpenAIRE

    Leães, Sabrina Durgante

    2008-01-01

    Dissertação de mestrado em Design e Marketing O actual estado do Marketing em Moda é uma das questões ainda complexa com que se debate a sociedade global. As questões do Marketing em Moda percorrem alguns aspectos fundamentais tais como as constantes mutações do meio envolvente, a forma de como é percebida e comunicada a identidade das marcas de moda, em busca da melhor forma de segmentar o mercado e definir o seu posicionamento, bem como a reacção ao produto de moda do consumidor final. ...

  19. SI units in radiation protection

    International Nuclear Information System (INIS)

    Jain, V.K.; Soman, S.D.

    1978-01-01

    International System of Units abbreviated as SI units has been adopted by most of the countries of the world. Following this development, the implementation of SI units has become mandatory with a transition period of about ten years. Some of the journals have already adopted the SI units and any material sent for publication to them must use only these. International Commission on Radiation Units and Measurement (ICRU) published letters in several journals including Physics in Medicine and Biology, Health Physics, British Journal of Radiology, etc. outlining the latest recommendations on SI units to elicit the reactions of scientists in the general field of radiological sciences. Reactions to the letters were numerous as can be seen in the correspondence columns of these journals for the last few years and ranged from great misgivings and apprehension to support and appreciation. SI units have also been the subject of editorial comments in several journals. On the basis of a survey of this literature, it may be said that there was general agreement on the long term advantage of SI units inspite of some practical difficulties in their use particularly in the initial stages. This report presents a review of SI units in radiological sciences with a view to familiarize the users with the new units in terms of the old. A time table for the gradual changeover to the SI units is also outlined. (auth.)

  20. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  1. Motivações do conceito de corpo-si: corpo-si, atividade, experiência = Motivations of the concept of selfbody: selfbody, activity, experience

    Directory of Open Access Journals (Sweden)

    Schwartz, Yves

    2014-01-01

    Full Text Available Este texto busca explicar a função de convergências e questões possibilitadoras do desenvolvimento da tese segundo a qual toda atividade de trabalho é sempre “uso de si, por si e por outros” (SCHWARTZ, 1987. Sucessivas reformulações levaram ao estabelecimento do seguinte princípio: toda atividade industriosa é sempre uma “dramática do uso de um corpo-si” (remetendo “dramática” à necessidade contínua de travar debates com normas. Sendo a atividade humana identificada assim como um contínuo debate de normas cujo lócus é o corpo-si, convém perguntar como, em termos de diferentes medidas temporais, esses debates se encaixam (à maneira das bonecas russas, ou seja, de que maneira as relações valorativas nos meios de vida e de trabalho se incorporam ao âmago do corpo-si, inclusive em termos de temporalidades mais curtas, “escondidas no corpo”. Cabe assim entender qual é a unidade enigmática dessa entidade – o corpo-si – que acumula experiência e saberes de formas extremamente diversas, notadamente em sua relação com a linguagem, que articula patrimônio epistêmico e sensibilidade axiológica, sem deixar de estar disponível para ou restrita por micro-escolhas e reajustamentos que a vida não cessa de lhe propor ou impor. O texto, retomando parcialmente, segundo seus objetivos, a distinção entre idem e ipse (RICOEUR, pretende conceber debates de normas encaixados como o cerne da dialética entre essas dimensões

  2. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  3. Emergency Medical Service (EMS) Stations

    Data.gov (United States)

    Kansas Data Access and Support Center — EMS Locations in Kansas The EMS stations dataset consists of any location where emergency medical services (EMS) personnel are stationed or based out of, or where...

  4. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  5. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  6. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  7. Remodelagem do sistema computacional para dosimetria em radioterapia por nêutrons e fótons baseado em métodos estocásticos - SISCODES

    OpenAIRE

    Bruno Machado Trindade

    2011-01-01

    O presente trabalho apresenta a remodelagem do Sistema Computacional para Dosimetria em Radioterapia por Nêutrons e Fótons Baseado em Métodos Estocásticos . SISCODES. Para isso mostra a proposta inicial e estado anterior do sistema, as modificações e expansões propostas e executadas, e o estado atual de desenvolvimento do sistema. Melhorias futuras são propostas ao final do trabalho. O SISCODES é um sistema que permite a execução de planejamento computacional 3D em radioterapia, através de si...

  8. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  9. Improving the characteristics of foundry alloys AlSiCuMg during manufacturing

    Science.gov (United States)

    Fragoso, Bruno Filipe Marques

    As piroxenas sao um vasto grupo de silicatos minerais encontrados em muitas rochas igneas e metamorficas. Na sua forma mais simples, estes silicatos sao constituidas por cadeias de SiO3 ligando grupos tetrahedricos de SiO4. A formula quimica geral das piroxenas e M2M1T2O6, onde M2 se refere a catioes geralmente em uma coordenacao octaedrica distorcida (Mg2+, Fe2+, Mn2+, Li+, Ca2+, Na+), M1 refere-se a catioes numa coordenacao octaedrica regular (Al3+, Fe3+, Ti4+, Cr3+, V3+, Ti3+, Zr4+, Sc3+, Zn2+, Mg2+, Fe2+, Mn2+), e T a catioes em coordenacao tetrahedrica (Si4+, Al3+, Fe3+). As piroxenas com estrutura monoclinica sao designadas de clinopiroxenes. A estabilidade das clinopyroxenes num espectro de composicoes quimicas amplo, em conjugacao com a possibilidade de ajustar as suas propriedades fisicas e quimicas e a durabilidade quimica, tem gerado um interesse mundial devido a suas aplicacoes em ciencia e tecnologia de materiais. Este trabalho trata do desenvolvimento de vidros e de vitro-cerâmicos baseadas de clinopiroxenas para aplicacoes funcionais. O estudo teve objectivos cientificos e tecnologicos; nomeadamente, adquirir conhecimentos fundamentais sobre a formacao de fases cristalinas e solucoes solidas em determinados sistemas vitro-cerâmicos, e avaliar a viabilidade de aplicacao dos novos materiais em diferentes areas tecnologicas, com especial enfase sobre a selagem em celulas de combustivel de oxido solido (SOFC). Com este intuito, prepararam-se varios vidros e materiais vitro-cerâmicos ao longo das juntas Enstatite (MgSiO3) - diopsidio (CaMgSi2O6) e diopsidio (CaMgSi2O6) - Ca - Tschermak (CaAlSi2O6), os quais foram caracterizados atraves de um vasto leque de tecnicas. Todos os vidros foram preparados por fusao-arrefecimento enquanto os vitro-cerâmicos foram obtidos quer por sinterizacao e cristalizacao de fritas, quer por nucleacao e cristalizacao de vidros monoliticos. Estudaram-se ainda os efeitos de varias substituicoes ionicas em composicoes de

  10. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  11. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  12. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  13. Dilemas da masculinidade em comunidades de leitores da revista Men's Health

    Directory of Open Access Journals (Sweden)

    Jair de Souza Ramos

    Full Text Available Neste artigo, analiso as representações sobre masculinidade e cuidado de si em comunidades de leitores da revista Men's Health. Com base na análise de tópicos e postagens em comunidades online, abordo desde as tensões em torno da oposição homossexual / heterossexual na autodefinição dos leitores, até a ênfase em um corpo concebido, a um só tempo, como saudável e masculino. Meu objetivo é examinar a construção de uma imagem de si masculina entre estes leitores, que se valem de temas, problemas e técnicas de si que estão presentes na revista, mas, sobretudo, além dela, e que dizem respeito a um determinado estilo de masculinidade, em que a expressão de si através da exposição do corpo desempenha um papel primordial.

  14. <em>Angiostrongylus vasorumem> in red foxes (<em>Vulpes vulpesem> and badgers (<em>Meles melesem> from Central and Northern Italy

    Directory of Open Access Journals (Sweden)

    Marta Magi

    2010-06-01

    Full Text Available Abstract During 2004-2005 and 2007-2008, 189 foxes (<em>Vulpes vulpesem> and 6 badgers (<em>Meles melesem> were collected in different areas of Central Northern Italy (Piedmont, Liguria and Tuscany and examined for <em>Angiostrongylus vasorumem> infection. The prevalence of the infection was significantly different in the areas considered, with the highest values in the district of Imperia (80%, Liguria and in Montezemolo (70%, southern Piedmont; the prevalence in Tuscany was 7%. One badger collected in the area of Imperia turned out to be infected, representing the first report of the parasite in this species in Italy. Further studies are needed to evaluate the role played by fox populations as reservoirs of infection and the probability of its spreading to domestic dogs.
    Riassunto <em>Angiostrongylus vasorumem> nella volpe (<em>Vulpes vulpesem> e nel tasso (<em>Meles melesem> in Italia centro-settentrionale. Nel 2004-2005 e 2007-2008, 189 volpi (<em>Vulpes vulpesem> e 6 tassi (<em>Meles melesem> provenienti da differenti aree dell'Italia settentrionale e centrale (Piemonte, Liguria Toscana, sono stati esaminati per la ricerca di <em>Angiostrongylus vasorumem>. La prevalenza del nematode è risultata significativamente diversa nelle varie zone, con valori elevati nelle zone di Imperia (80% e di Montezemolo (70%, provincia di Cuneo; la prevalenza in Toscana è risultata del 7%. Un tasso proveniente dall'area di Imperia è risultato positivo per A. vasorum; questa è la prima segnalazione del parassita in tale specie in Italia. Ulteriori studi sono necessari per valutare il potenziale della volpe come serbatoio e la possibilità di diffusione della parassitosi ai cani domestici.

    doi:10.4404/hystrix-20.2-4442

  15. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  16. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  17. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  18. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  19. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  20. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  1. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  2. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  3. Simulating SiD Calorimetry: Software Calibration Procedures and Jet Energy Resolution

    International Nuclear Information System (INIS)

    Cassell, R.

    2009-01-01

    Simulated calorimeter performance in the SiD detector is examined. The software calibration procedures are described, as well as the perfect pattern recognition PFA reconstruction. Performance of the SiD calorimeters is summarized with jet energy resolutions from calorimetry only, perfect pattern recognition and the SiD PFA algorithm. Presented at LCWS08(1). Our objective is to simulate the calorimeter performance of the SiD detector, with and without a Particle Flow Algorithm (PFA). Full Geant4 simulations using SLIC(2) and the SiD simplified detector geometry (SiD02) are used. In this geometry, the calorimeters are represented as layered cylinders. The EM calorimeter is Si/W, with 20 layers of 2.5mm W and 10 layers of 5mm W, segmented in 3.5 x 3.5mm 2 cells. The HAD calorimeter is RPC/Fe, with 40 layers of 20mm Fe and a digital readout, segmented in 10 x 10mm 2 cells. The barrel detectors are layered in radius, while the endcap detectors are layered in z(along the beam axis)

  4. International EMS Systems

    DEFF Research Database (Denmark)

    Langhelle, Audun; Lossius, Hans Morten; Silfvast, Tom

    2004-01-01

    exist, however, especially within the ground and air ambulance service, and the EMS systems face several challenges. Main problems and challenges emphasized by the authors are: (1) Denmark: the dispatch centres are presently not under medical control and are without a national criteria based system......Emergency medicine service (EMS) systems in the five Nordic countries have more similarities than differences. One similarity is the involvement of anaesthesiologists as pre-hospital physicians and their strong participation for all critically ill and injured patients in-hospital. Discrepancies do....... Access to on-line medical advice of a physician is not available; (2) Finland: the autonomy of the individual municipalities and their responsibility to cover for primary and specialised health care, as well as the EMS, and the lack of supporting or demanding legislation regarding the EMS; (3) Iceland...

  5. SI units in engineering and technology

    CERN Document Server

    Qasim, S H

    2016-01-01

    SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

  6. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  7. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  8. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  9. A poliomielite em Sergipe

    Directory of Open Access Journals (Sweden)

    Hélio A. Oliveira

    1994-06-01

    Full Text Available Os autores apresentam estudo retrospectivo da poliomielite em Sergipe. Dividem o estudo em três períodos levando em consideração a taxa de notificação de casos positivos e enfatizam o período que vai de 1979 a 1989, pelo estudo de 159 casos consecutivos. As seguintes informações foram levantadas para cada caso: sexo, idade, procedência, estado vacinai anterior e evolução clínica. São também avaliadas a incidência anual, relação incidência/cobertura vacinai e distribuição geográfica. Tecem comentários sobre os surtos epidêmicos ocorridos em 1984 e 1986, sobre as alterações na circulação do poliovírus selvagem (P1 para P3 e sobre problemas relacionados à não aquisição de imunidade em crianças com esquema vacinal completo. Consideram a poliomielite controlada no Estado, mas enfatizam a necessidade de manutenção de Vigilância epidemiológica efetiva para todos os casos de paralisia aguda e flácida em menores de 14 anos de idade.

  10. EM type radioactive standards. Radioaktivni etalony EM

    Energy Technology Data Exchange (ETDEWEB)

    1981-01-01

    The standard contains technical specifications and conditions of production, testing, packing, transport and storage of EM type planar calibration standards containing radionuclides /sup 14/C, /sup 60/Co, /sup 90/Sr, /sup 137/Cs, /sup 147/Pm, /sup 204/Tl, /sup 239/Pu, /sup 241/Am and natural U. The terminology is explained, the related Czechoslovak standards and legal prescriptions given and amendments to these prescriptions presented.

  11. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  12. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  13. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  14. Winter food of the fox <em>Vulpes vulpesem> in the Province of Cuneo (North-Western Italy / Alimentazione invernale della Volpe <em>Vulpes vulpesem> nell'Albese (Provincia di Cuneo

    Directory of Open Access Journals (Sweden)

    Paolo Debernardi

    1991-07-01

    Full Text Available Abstract The diet of the Fox <em>Vulpes vulpesem> was studied by the analysis of 157 gastric contents coming from hilly areas of the Province of Cuneo. Samples were gathered during January-March of the years '86 (N. 41, '87 (N. 72 and '88 (N. 44. The mean percentage of frequency was determined for the following feeding categories: Fruits (26.1%, Other vegetable components (19.7%, Insects (2.5%, Wild birds (11.5%, Insectivores and Rodents (42.7%, <em>Lepus capensisem> (13.4%, Indeterminate Lagomorphs (17.2%, Domestic animals (59.2% and Other (2.5%. The diet is analysed in relation to some available trophic resources (dumps, restoking of hares and of pheasants. Riassunto Vengono presentati i dati dell'analisi di 157 contenuti gastrici di <em>Vulpes vulpesem>, provenienti da aree collinari della provincia di Cuneo; i campioni si riferiscono ai primi tre mesi delle annate '86 (N. 41, '87 (N. 72 e '88 (N. 44. Sono state determinate le frequenze percentuali delle seguenti categorie alimentari: Frutti (26,1%, Altre componenti vegetali (19,7%, Insetti (2,5%, Uccelli selvatici (11,5%, Insettivori e Roditori (42,7%, <em>Lepus capensisem> (13,4%, Lagomorfi indeterminati (17,2%, Animali domestici (59,2% e Altro (2,5%. La dieta viene esaminata in relazione ad alcuni aspetti legati alle disponibilità trofiche del territorio (presenza di discariche, ripopolamenti di selvaggina.

  15. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  16. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  17. Study of the effect of residual stress on the microstrain of the crystalline lattice and on the crystallite size of steel Cr-Si-V by shot peening; Estudo do efeito da tensão residual na microdeformação da rede cristalina e no tamanho de cristalito em aço Cr-Si-V jateado com granalhas de aço

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Rene Ramos de

    2016-07-01

    In the present work, some effects caused by shot peening on Cr-Si-V steel have been studied, a process that aims to increase fatigue resistance. For this study the variation of parameters in the process are tools to better understand the mechanisms that influence this property. The parameters used in this work were the variation of the grit and the pre-tensioning of the samples applied in leafs used in automotive springs of chrome silicon vanadium alloy steel (SAE 9254 + V). Initially the evaluation of the residual stress profile was performed by X-ray diffraction using the sen{sup 2}Ψ method along the thickness in the region where the stress is compressive. The results show an anomalous effect in relation to the characteristic profile of the residual stress distribution with the decrease of compression in the initial layers in relation to the blasted surface. With the use of scanning electron microscopy, the region affected by grit blasting was observed, noting that the plastically deformed regions are located in the same regions where the compressive residual stress decrease. The profile obtained by X-ray diffraction provides necessary information with the aim of combining the effects of microstress (microstrain) on macrostress (residual stress). This relationship was confirmed by the overlap of the results found in the distribution of the microstrain of the crystalline lattice with the residual stress along the thickness in the plastically deformed region. The results of the X-ray diffraction tests show an existence of tensile anisotropy between the planes generated by stacking faults and the dislocations density. Therefore, to obtain the values of the microstress must be considered the factors of the elastic constants and the crystallographic planes. The method applied was the modified Williamson-Hall. Beyound this method, others were also used, such as: Warren-Averbach method and the Single Line method, this applying the Fourier series, however, when

  18. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  19. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Purification, Characterization and Antioxidant Activities <em>in Vitroem>> em>and <em>in Vivoem> of the Polysaccharides from <em>Boletus edulisem> Bull

    Directory of Open Access Journals (Sweden)

    Yijun Fan

    2012-07-01

    Full Text Available A water-soluble polysaccharide (BEBP was extracted from <em>Boletus edulis em>Bull using hot water extraction followed by ethanol precipitation. The polysaccharide BEBP was further purified by chromatography on a DEAE-cellulose column, giving three major polysaccharide fractions termed BEBP-1, BEBP-2 and BEBP-3. In the next experiment, the average molecular weight (Mw, IR and monosaccharide compositional analysis of the three polysaccharide fractions were determined. The evaluation of antioxidant activities both <em>in vitroem> and <em>in vivo em>suggested that BEBP-3 had good potential antioxidant activity, and should be explored as a novel potential antioxidant.

  1. Sulla presenza di <em>Sorex antinoriiem>, <em>Neomys anomalusem> (Insectivora, Soricidae e <em>Talpa caecaem> (Insectivora, Talpidae in Umbria

    Directory of Open Access Journals (Sweden)

    A.M. Paci

    2003-10-01

    Full Text Available Lo scopo del contributo è di fornire un aggiornamento sulla presenza del Toporagno del Vallese <em>Sorex antinoriiem>, del Toporagno acquatico di Miller <em>Neomys anomalusem> e della Talpa cieca <em>Talpa caecaem> in Umbria, dove le specie risultano accertate ormai da qualche anno. A tal fine sono stati rivisitati i reperti collezionati e la bibliografia conosciuta. Toporagno del Vallese: elevato di recente a livello di specie da Brünner et al. (2002, altrimenti considerato sottospecie del Toporagno comune (<em>S. araneus antinoriiem>. È conservato uno di tre crani incompleti (mancano mandibole ed incisivi superiori al momento prudenzialmente riferiti a <em>Sorex> cfr. <em>antinorii>, provenienti dall?Appennino umbro-marchigiano settentrionale (dintorni di Scalocchio - PG, 590 m. s.l.m. e determinati sulla base della pigmentazione rossa degli ipoconi del M1 e M2; Toporagno acquatico di Miller: tre crani (Breda in Paci e Romano op. cit. e un esemplare intero (Paci, ined. sono stati trovati a pochi chilometri di distanza gli uni dall?altro tra i comuni di Assisi e Valfabbrica, in ambienti mediocollinari limitrofi al Parco Regionale del M.te Subasio (Perugia. In provincia di Terni la specie viene segnalata da Isotti (op. cit. per i dintorni di Orvieto. Talpa cieca: sono noti una femmina e un maschio raccolti nel comune di Pietralunga (PG, rispettivamente in una conifereta a <em>Pinus nigraem> (m. 630 s.l.m. e nelle vicinanze di un bosco misto collinare a prevalenza di <em>Quercus cerrisem> (m. 640 s.l.m.. Recentemente un terzo individuo è stato rinvenuto nel comune di Sigillo (PG, all?interno del Parco Regionale di M.te Cucco, sul margine di una faggeta a 1100 m s.l.m. In entrambi i casi l?areale della specie è risultato parapatrico con quello di <em>Talpa europaeaem>.

  2. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  3. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  4. Methyl 2-Benzamido-2-(1<em>H>-benzimidazol-1-ylmethoxyacetate

    Directory of Open Access Journals (Sweden)

    Alami Anouar

    2012-09-01

    Full Text Available The heterocyclic carboxylic α-aminoester methyl 2-benzamido-2-(1<em>H>-benzimidazol-1-ylmethoxyacetate is obtained by <em>O>-alkylation of methyl α-azido glycinate <em>N>-benzoylated with 1<em>H>-benzimidazol-1-ylmethanol.

  5. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  6. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2004-01-01

    Brief explanation of the use of 32 Si in the dating of sediments. 32 Si , with a half-life of c.140 years, can be applied in the age range 30-1000 years. An appropriate dating tool for that time range is essential because it includes three very important epochs: the impact of human colonisation and industrialisation during the last 150 years, the Little Ice Age between about 1650 AD and 1850 AD, and the last part of the Medieval Climatic Optimum. 23 refs

  7. SI units in radiation protection

    International Nuclear Information System (INIS)

    Herrmann, D.

    1976-10-01

    In the field of radiation protection all hitherto used units for activity, activity concentrations, exposure, absorbed dose, and dose rates have to be replaced by SI units during the next years. For this purpose graphs and conversion tables are given as well as recommendations on unit combinations preferentially to be used. As to the dose equivalent, it is suggested to introduce a new special unit being 100 times greater than the rem, instead of maintaining the rem or using the gray for both absorbed dose and dose equivalent. Measures and time schedule relating to the gradual transition to SI units in measuring techniques, training, and publishing et cetera are explained. (author)

  8. A specimen of <em>Sorex> cfr. <em>samniticus> in Barn Owl's pellets from Murge plateau (Apulia, Italy / Su di un <em>Sorex> cfr. <em>samniticus> (Insectivora, Soricidae rinvenuto in borre di <em>Tyto albaem> delle Murge (Puglia, Italia

    Directory of Open Access Journals (Sweden)

    Giovanni Ferrara

    1992-07-01

    Full Text Available Abstract In a lot of Barn Owl's pellets from the Murge plateau a specimen of <em>Sorex> sp. was detected. Thank to some morphological and morphometrical features, the cranial bones can be tentatively attributed to <em>Sorex samniticusem> Altobello, 1926. The genus <em>Sorex> was not yet included in the Apulia's fauna southwards of the Gargano district; the origin and significance of the above record is briefly discussed, the actual presence of a natural population of <em>Sorex> in the Murge being not yet proved. Riassunto Viene segnalato il rinvenimento di un esemplare di <em>Sorex> cfr. <em>samniticus> da borre di <em>Tyto albaem> delle Murge. Poiché il genere non era stato ancora segnalato nella Puglia a sud del Gargano, viene discusso il significato faunistico del reperto.

  9. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  10. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  11. Glycosylation of Vanillin and 8-Nordihydrocapsaicin by Cultured <em>Eucalyptus perrinianaem> Cells

    Directory of Open Access Journals (Sweden)

    Naoji Kubota

    2012-05-01

    Full Text Available Glycosylation of vanilloids such as vanillin and 8-nordihydrocapsaicin by cultured plant cells of <em>Eucalyptus perrinianaem> was studied. Vanillin was converted into vanillin 4-<em>O>-b-D-glucopyranoside, vanillyl alcohol, and 4-<em>O>-b-D-glucopyranosylvanillyl alcohol by <em>E. perriniana em>cells. Incubation of cultured <em>E. perrinianaem> cells with 8-nor- dihydrocapsaicin gave 8-nordihydrocapsaicin 4-<em>O>-b-D-glucopyranoside and 8-nordihydro- capsaicin 4-<em>O>-b-D-gentiobioside.

  12. Retratos em movimento.

    Directory of Open Access Journals (Sweden)

    Luiz Carlos Oliveira Junior

    Full Text Available resumo O artigo aborda aspectos da relação do cinema com a arte do retrato. Buscamos, em primeiro lugar, uma definição estética do que seria um retrato cinematográfico, sempre em tensão com os critérios formais e padrões estilísticos que historicamente constituíram o retrato pictórico. Em seguida, relacionamos essa questão com a importância que se deu à representação do close-up de rosto nas primeiras décadas do cinema, quando foi atribuído aos filmes um papel inédito no estudo da fisionomia e da expressão facial. Por fim, apresentamos exemplos de autorretratos na pintura e no cinema para expor a forma como a autorrepresentação põe em crise as noções de subjetividade e identidade em que a definição clássica do retrato se apoiava.

  13. Development of ASTM Standard for SiC-SiC Joint Testing Final Scientific/Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Jacobsen, George [General Atomics, San Diego, CA (United States); Back, Christina [General Atomics, San Diego, CA (United States)

    2015-10-30

    As the nuclear industry moves to advanced ceramic based materials for cladding and core structural materials for a variety of advanced reactors, new standards and test methods are required for material development and licensing purposes. For example, General Atomics (GA) is actively developing silicon carbide (SiC) based composite cladding (SiC-SiC) for its Energy Multiplier Module (EM2), a high efficiency gas cooled fast reactor. Through DOE funding via the advanced reactor concept program, GA developed a new test method for the nominal joint strength of an endplug sealed to advanced ceramic tubes, Fig. 1-1, at ambient and elevated temperatures called the endplug pushout (EPPO) test. This test utilizes widely available universal mechanical testers coupled with clam shell heaters, and specimen size is relatively small, making it a viable post irradiation test method. The culmination of this effort was a draft of an ASTM test standard that will be submitted for approval to the ASTM C28 ceramic committee. Once the standard has been vetted by the ceramics test community, an industry wide standard methodology to test joined tubular ceramic components will be available for the entire nuclear materials community.

  14. Identidade pessoal em Hume e em Kant

    OpenAIRE

    Peixoto, Cristiano Rodrigues

    2016-01-01

    O tema desta dissertação é o problema da identidade pessoal. Mais especificamente, o objetivo deste trabalho é investigar e comparar o modo como Hume e Kant constroem, no interior de seus próprios sistemas filosóficos, suas teorias da identidade pessoal (do eu), de modo que essas teorias possam fundamentar a construção de conhecimento teórico. A teoria da identidade pessoal de Hume está intimamente ligada ao seu modelo empirista de investigação, de acordo com o qual nenhuma conclusão metafísi...

  15. <em>In Vivoem> Histamine Optical Nanosensors

    Directory of Open Access Journals (Sweden)

    Heather A. Clark

    2012-08-01

    Full Text Available In this communication we discuss the development of ionophore based nanosensors for the detection and monitoring of histamine levels <em>in vivoem>. This approach is based on the use of an amine-reactive, broad spectrum ionophore which is capable of recognizing and binding to histamine. We pair this ionophore with our already established nanosensor platform, and demonstrate <em>in vitroem> and <em>in vivoem> monitoring of histamine levels. This approach enables capturing rapid kinetics of histamine after injection, which are more difficult to measure with standard approaches such as blood sampling, especially on small research models. The coupling together of <em>in vivoem> nanosensors with ionophores such as nonactin provide a way to generate nanosensors for novel targets without the difficult process of designing and synthesizing novel ionophores.

  16. BEING AND DISCOURSE IN PLATO’S PARMENIDES SER E DISCURSO NO <em>PARMÊNIDES> DE PLATÃO

    Directory of Open Access Journals (Sweden)

    Eliane Christina Souza

    2011-03-01

    Full Text Available The <em>Parmenides> is known as the dialogue in which Plato makes a criticism of his theory of forms. Through paradoxes, the character Parmenides criticizes the theory of forms presented by Socrates in the dialogue, targeting the relation they have with sensibles and with each other, call for participation, and the discoursive consequences of this relation. I present a reading of the Parmenides that suggests that the self-criticism points out inconsistencies in the Platonic theory of participation as it is presented in the Parmenides, and that will be corrected later in the Sophist.O <em>Parmênides> é conhecido como o diálogo em que Platão faz uma crítica de sua teoria das formas. Através de paradoxos, a personagem Parmênides critica a teoria das formas apresentada por Sócrates no diálogo, tendo como alvo a relação que as formas mantêm com os sensíveis e entre si, chamada de participação, e as consequências discursivas dessa relação. Eu apresento uma leitura do <em>Parmênides> que sugere que a autocrítica platônica aponta inconsistências na teoria da participação tal como ela é apresentada no <em>Parmênides> e que serão corrigidas posteriormente no <em>Sofista>.

  17. Study of the <em>in Vitroem> Antiplasmodial, Antileishmanial and Antitrypanosomal Activities of Medicinal Plants from Saudi Arabia

    Directory of Open Access Journals (Sweden)

    Nawal M. Al-Musayeib

    2012-09-01

    Full Text Available The present study investigated the <em>in vitroem> antiprotozoal activity of sixteen selected medicinal plants. Plant materials were extracted with methanol and screened <em>in vitroem> against erythrocytic schizonts of <em>Plasmodium falciparumem>, intracellular amastigotes of <em>Leishmania infantum em>and <em>Trypanosoma cruzi em>and free trypomastigotes of<em> T. bruceiem>. Cytotoxic activity was determined against MRC-5 cells to assess selectivity<em>. em>The criterion for activity was an IC50 < 10 µg/mL (4. Antiplasmodial activity was found in the<em> em>extracts of<em> em>>Prosopis julifloraem> and <em>Punica granatumem>. Antileishmanial activity<em> em>against <em>L. infantumem> was demonstrated in <em>Caralluma sinaicaem> and <em>Periploca aphylla.em> Amastigotes of<em> T. cruzi em>were affected by the methanol extract of<em> em>>Albizia lebbeckem>> em>pericarp, <em>Caralluma sinaicaem>,> Periploca aphylla em>and <em>Prosopius julifloraem>. Activity against<em> T. brucei em>was obtained in<em> em>>Prosopis julifloraem>. Cytotoxicity (MRC-5 IC50 < 10 µg/mL and hence non-specific activities were observed for<em> em>>Conocarpus lancifoliusem>.>

  18. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  19. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  20. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  1. SI units in biomedical dosimetry

    International Nuclear Information System (INIS)

    Liden, K.

    1975-01-01

    The International commission on radiation units and measurements (ICRU), during the period from 1953 to 1962 presented its definitions of the quantities absorbed dose, exposure, activity, and dose equivalent and the corresponding special units the rad, the roentgen, the curie, and the rem. At the same time an international practical system of units was developed, Le Systeme International d'Unites (SI). It was adopted by the 11th Conference Generale des Poids et Mesures (CGPM) in 1960 and is now officially introduced in almost all countries. The general implementation of the SI means difficulties for the future use of the special radiation units, because the numerical factors involved prevent their adoption as SI units. In view of this, and after having sampled the opinion in the radiological field, the ICRU prepared a Statement on Units in July, 1974 which was forwarded to the Comite International des Poids et Mesures (CIPM) and its Comite Consultatif des Unites (CCU) for consideration. As a result of this statement the CIPM has now proposed, that the 15rh CGPM adopt special names for two SI units, namely the becquerel, symbol Bq, for the unit of activity of radionuclides equal to the reciprocal second, s 1- , and the gray, symbol Gy, for the unit of absorbed dose equal to the joule per kilogram, J/kg. The 15th CGPM will consider this matter in May, 1975. (author)

  2. A emissão em 8mm e as bandas de Merrill-Sanford em estrelas carbonadas

    Science.gov (United States)

    de Mello, A. B.; Lorenz-Martins, S.

    2003-08-01

    Estrelas carbonadas possuem bandas moleculares em absorção no visível e, no infravermelho (IR) as principais características espectrais se devem a emissão de grãos. Recentemente foi detectada a presença de bandas de SiC2 (Merrill-Sanford, MS) em emissão sendo atribuída à presença de um disco rico em poeira. Neste trabalho analisamos uma amostra de 14 estrelas carbonadas, observadas no telescópio de 1.52 m do ESO em 4 regiões espectrais diferentes, a fim de detectar as bandas de MS em emissão. Nossa amostra é composta de estrelas que apresentam além da emissão em 11.3 mm, outra em 8 mm. Esta última emissão, não usual nestes objetos, tem sido atribuída ou a moléculas de C2H2, ou a um composto sólido ainda indefinido. A detecção de emissões de MS e aquelas no IR, simultaneamente, revelaria um cenário mais complexo que o habitualmente esperado para os ventos destes objetos. No entanto como primeiro resultado, verificamos que as bandas de Merrill-Sanford encontram-se em absorção, não revelando nenhuma conexão com a emissão a 8 mm. Assim, temos duas hipóteses: (a) a emissão a 8 mm se deve à molécula C2H2 ou (b) essa emissão é resultado da emissão térmica de grãos. Testamos a segunda hipótese modelando a amostra com grãos não-homogêneos de SiC e quartzo, o qual emite em aproximadamente 8mm. Este grão seria produzido em uma fase evolutiva anterior a das carbonadas (estrelas S) e por terem uma estrutura cristalina são destruídos apenas na presença de campos de radiação ultravioleta muito intensos. Os modelos para os envoltórios utilizam o método de Monte Carlo para descrever o problema do transporte da radiação. As conclusões deste trabalho são: (1) as bandas de Merrill-Sanford se encontram em absorção, sugerindo um cenário usual para os ventos das estrelas da amostra; (2) neste cenário, a emissão em 8 mm seria resultado de grãos de quartzo com mantos de SiC, indicando que o quartzo poderia sobreviver a fase

  3. Cyberbullying em adolescentes brasileiros

    OpenAIRE

    Wendt, Guilherme Welter

    2012-01-01

    O cyberbullying é entendido como uma forma de comportamento agressivo que ocorre através dos meios eletrônicos de interação (computadores, celulares, sites de relacionamento virtual), sendo realizado de maneira intencional por uma pessoa ou grupo contra alguém em situação desigual de poder e, ainda, com dificuldade em se defender. Os estudos disponíveis até o presente momento destacam que o cyberbullying é um fator de risco para o desenvolvimento de sintomas de ansiedade, depressão, ideação s...

  4. Nietzsche em voga

    OpenAIRE

    Borromeu, Carlos

    2015-01-01

    Resumo:Texto publicado em 1941, na revista de orientação católica A Ordem, no Rio de Janeiro. Seu autor considera que Nietzsche teria negado a moral tradicional, concebendo em seu lugar outra, porém imoral e brutal. Acusa o filósofo, por fim, de ser responsável pela Guerra ora e curso na Europa. Abstract:Text published in 1941 in the Catholic orientation magazine, A Ordem, in Rio de Janeiro. The author believes that Nietzsche would have denied traditional morality, conceiving another in it...

  5. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  6. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  7. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  8. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  9. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  10. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  11. Natural Products from Antarctic Colonial Ascidians of the Genera <em>Aplidium> and <em>Synoicum>: Variability and Defensive Role

    Directory of Open Access Journals (Sweden)

    Conxita Avila

    2012-08-01

    Full Text Available Ascidians have developed multiple defensive strategies mostly related to physical, nutritional or chemical properties of the tunic. One of such is chemical defense based on secondary metabolites. We analyzed a series of colonial Antarctic ascidians from deep-water collections belonging to the genera <em>Aplidium> and <em>Synoicum> to evaluate the incidence of organic deterrents and their variability. The ether fractions from 15 samples including specimens of the species <em>A.> <em>falklandicum>, <em>A.> <em>fuegiense>, <em>A.> <em>meridianum>, <em>A.> <em>millari> and <em>S.> <em>adareanum> were subjected to feeding assays towards two relevant sympatric predators: the starfish <em>Odontaster> <em>validus>, and the amphipod <em>Cheirimedon> <em>femoratus>. All samples revealed repellency. Nonetheless, some colonies concentrated defensive chemicals in internal body-regions rather than in the tunic. Four ascidian-derived meroterpenoids, rossinones B and the three derivatives 2,3-epoxy-rossinone B, 3-epi-rossinone B, 5,6-epoxy-rossinone B, and the indole alkaloids meridianins A–G, along with other minoritary meridianin compounds were isolated from several samples. Some purified metabolites were tested in feeding assays exhibiting potent unpalatabilities, thus revealing their role in predation avoidance. Ascidian extracts and purified compound-fractions were further assessed in antibacterial tests against a marine Antarctic bacterium. Only the meridianins showed inhibition activity, demonstrating a multifunctional defensive role. According to their occurrence in nature and within our colonial specimens, the possible origin of both types of metabolites is discussed.

  12. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  13. Obtenção de substratos cerâmicos no sistema Si-Al-O-N-C empregando polissiloxanos e carga de Si e Al2O3 Ceramic tapes of Si-Al-O-N-C compounds using mixtures of polyssiloxane and Si-Al2O3 fillers

    Directory of Open Access Journals (Sweden)

    R. M. Rocha

    2005-03-01

    Full Text Available A técnica de processamento de colagem por fita (tape casting tem sido amplamente utilizada na obtenção de cerâmicas para diferentes aplicações: substratos cerâmicos e estruturas planares em multicamadas para circuitos integrados e capacitores; eletrólitos sólidos para células a combustível e sensores; cerâmicas piezoelétricas para atuadores e transdutores; membranas de separação para micro-filtragem; compósitos estruturais e trocadores de calor. Neste trabalho, a técnica convencional de colagem por fita foi adaptada com a utilização do processo de pirólise controlada de misturas de polímeros e carga, empregando-se polissiloxanos e cargas de silício e alumina nas suspensões. Foram preparadas suspensões com 60% vol. de fase polimérica (polissiloxanos e metil-trietoxi-silano e 40% vol. de carga (Si e Al2O3, com diferentes concentrações dos polímeros e das cargas. As amostras na forma de substratos foram pirolisadas em atmosfera de nitrogênio a 1400 °C/2 h e 1500 °C/2 h, sendo convertidas em materiais cerâmicos no sistema Si-Al-O-N-C. O processo de pirólise foi caracterizado até a temperatura de 1000 ºC por análise termogravimétrica. As cerâmicas foram caracterizadas quanto às fases formadas, microestrutura, massa específica aparente e condutividade térmica. Os substratos cerâmicos apresentaram porosidade relativamente alta (entre 12 e 22% e baixa condutividade térmica (entre 3 e 8 W/m.K, sendo constituídos por fases cristalinas de beta-SiC, Si2ON2, O'-SiAlON, Al2O3, mulita e fase amorfa de SiOC; o Si foi observado nas amostras pirolisadas a 1400 ºC.The tape casting technique has been widely used to prepare ceramic tapes for different applications: ceramic substrates and multilayer planar structures for integrated circuits and capacitors, solid electrolytes for fuel cells and sensors, piezoelectric ceramics for actuators and transducers, membrane systems for micro-filtration, structural composites and

  14. Entrance channel excitations in the 28Si + 28Si reaction

    International Nuclear Information System (INIS)

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  15. Osservazioni in cattività sul ciclo stagionale del peso corporeo e sull'efficienza digestiva di <em>Pipistrellus kuhliiem> e <em>Hypsugo saviiem> (Chiroptera: Vespertilionidae

    Directory of Open Access Journals (Sweden)

    Gianna Dondini

    2003-10-01

    . Un campione di 10 vermi della farina è stato soppresso e successivamente disidratato per 36 ore a 90 C° in forno determinandone così il contenuto in acqua. La comparazione dei dati relativi alla variazione del peso, benché il numero di campioni sia limitato, offre la possibilità di evidenziare alcune differenze tra le due specie: 1 l'andamento del peso nel periodo compreso tra lo svezzamento e l'incremento autunnale: in <em>P. kuhliiem>, dopo un massimo nel peso raggiunto allo svezzamento, tende evidentemente a calare. In <em>H. saviiem> invece si è osservato un leggero incremento nel peso. 2 È evidente che l'inizio del processo di accumulo di grasso è molto più rapido in <em>P. kuhliiem> che in <em>H. saviiem>. In quest'ultima specie il processo appare più graduale nel tempo. 3 In ambedue le specie osserviamo un leggero decremento del peso nel periodo successivo al momento in cui raggiungono il massimo peso per poi aumentare la velocità di decremento nel periodo terdo-invernale. 4 Il peso medio alla raccolta in <em>P. kuhliiem> è di 2.6 g (1.9 - 3.3 il peso massimo medio di 11.7 g (11.5 - 12; il peso medio alla raccolta in <em>H. saviiem> è di 3.7 g (3.2 ? 4.2 il peso massimo medio di 10.3 g (11.4 ? 9.3. 5 Si evidenzia un ciclo circannuale. L?efficienza digestiva, valutata a 90.5% per <em>H. saviiem> e 89.7% per <em>P. kuhliiem>, non evidenzia una differenza significativa tra le due specie e neppure durante le varie stagioni.

  16. Characterization of Si3N4-Al interface after corrosion tests Caracterização da interface Si3N4-Al após testes de corrosão

    Directory of Open Access Journals (Sweden)

    C. dos Santos

    2003-12-01

    Full Text Available Silicon nitride is a covalent ceramic material of high corrosion resistance and mechanical stability at elevated temperatures. Due to these properties, its use in metallurgical processes, such as the casting of alloys, is increasing. Therefore, the characterization of the interface between Si3N4 and the casted metal is of great importance to investigate possible interactions, which might deteriorate the ceramic mould or contaminate the metal. In this work, the use of Si3N4 as crucible material for Al-casting has been studied, by investigating the corrosion attack of liquid Al at a temperature of 1150 ºC during 30 days in air. The interface was characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. It has been found that due to superficial oxidation two oxide layers form - SiO2 on Si3N4 and Al2O3 on Al - which effectively hinder further reactions under the conditions studied, confering high corrosion resistance to the Si3N4 crucible.Nitreto de silício (Si3N4 é um material cerâmico covalente de elevada resistência à corrosão e estabilidade mecânica em temperaturas elevadas. Devido a essas propriedades, sua utilização em processos metalúrgicos, tais como em fundição de ligas metálicas, é crescente. Desta forma, a caracterização da interface entre Si3N4 e metais fundidos é de grande interesse para investigar possíveis interações as quais poderão deteriorar o material cerâmico e/ou contaminar o metal. Nesse trabalho o uso de Si3N4 como material base de cadinhos para fundição de alumínio foi estudado, pela investigação do ataque corrosivo de Al líquido a 1150 ºC durante 30 dias, ao ar. A interface foi caracterizada por difração de raios X, microscopia eletrônica de varredura e espectroscopia de energia dispersiva. É encontrado que devido à oxidação superficial dois óxidos se formam - SiO2 no Si3N4 e Al2O3 no Al - os quais evitam possíveis reações sob as condi

  17. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  18. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  19. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  20. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  1. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  2. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  3. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  4. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  5. High resolution investigation of the 30Si(þ, þ)30Si reaction

    NARCIS (Netherlands)

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  6. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  7. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  8. Clinical Relevance of <em>CDH1em> and <em>CDH13em> DNA-Methylation in Serum of Cervical Cancer Patients

    Directory of Open Access Journals (Sweden)

    Günther K. Bonn

    2012-07-01

    Full Text Available This study was designed to investigate the DNA-methylation status of <em>E>-cadherin (<em>CDH1em> and <em>H>-cadherin (<em>CDH13em> in serum samples of cervical cancer patients and control patients with no malignant diseases and to evaluate the clinical utility of these markers. DNA-methylation status of <em>CDH1em> and <em>CDH13em> was analyzed by means of MethyLight-technology in serum samples from 49 cervical cancer patients and 40 patients with diseases other than cancer. To compare this methylation analysis with another technique, we analyzed the samples with a denaturing high performance liquid chromatography (DHPLC PCR-method. The specificity and sensitivity of <em>CDH1em> DNA-methylation measured by MethyLight was 75% and 55%, and for <em>CDH13em> DNA-methylation 95% and 10%. We identified a specificity of 92.5% and a sensitivity of only 27% for the <em>CDH1em> DHPLC-PCR analysis. Multivariate analysis showed that serum <em>CDH1em> methylation-positive patients had a 7.8-fold risk for death (95% CI: 2.2–27.7; <em>p> = 0.001 and a 92.8-fold risk for relapse (95% CI: 3.9–2207.1; <em>p> = 0.005. We concluded that the serological detection of <em>CDH1em> and <em>CDH13em> DNA-hypermethylation is not an ideal diagnostic tool due to low diagnostic specificity and sensitivity. However, it was validated that <em>CDH1em> methylation analysis in serum samples may be of potential use as a prognostic marker for cervical cancer patients.

  9. Fumigant Antifungal Activity of Myrtaceae Essential Oils and Constituents from <em>Leptospermum petersoniiem> against Three <em>Aspergillus> Species

    Directory of Open Access Journals (Sweden)

    Il-Kwon Park

    2012-09-01

    Full Text Available Commercial plant essential oils obtained from 11 Myrtaceae plant species were tested for their fumigant antifungal activity against <em>Aspergillus ochraceusem>, <em>A. flavusem>, and <em>A. nigerem>. Essential oils extracted from<em> em>Leptospermum> <em>petersonii> at air concentrations of 56 × 10−3 mg/mL and 28 × 10−3 mg/mL completely inhibited the growth of the three <em>Aspergillus> species. However, at an air concentration of 14 × 10−3 mg/mL, inhibition rates of <em>L. petersoniiem> essential oils were reduced to 20.2% and 18.8% in the case of <em>A. flavusem> and <em>A. nigerem>, respectively. The other Myrtaceae essential oils (56 × 10−3 mg/mL only weakly inhibited the fungi or had no detectable affect. Gas chromatography-mass spectrometry analysis identified 16 compounds in <em>L. petersoniiem>> em>essential> em>oil.> em>The antifungal activity of the identified compounds was tested individually by using standard or synthesized compounds. Of these, neral and geranial inhibited growth by 100%, at an air concentration of 56 × 10−3 mg/mL, whereas the activity of citronellol was somewhat lover (80%. The other compounds exhibited only moderate or weak antifungal activity. The antifungal activities of blends of constituents identified in <em>L. petersoniiem> oil indicated that neral and geranial were the major contributors to the fumigant and antifungal activities.

  10. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  11. Compostos antioxidantes em frutos de acessos de caramboleira em diferentes ambientes de Pernambuco

    Directory of Open Access Journals (Sweden)

    José Severino de Lira Júnior

    2014-12-01

    Full Text Available A polpa da carambola contém compostos químicos com propriedades antioxidantes importantes à saúde humana, contra o envelhecimento celular e a prevenção de doenças. Este trabalho objetivou avaliar o fruto de acessos de caramboleira quanto às concentrações de compostos antioxidantes. Foram analisadas as concentrações de ácido ascórbico, carotenoides totais, flavonoides, fenólicos totais e taninos em cinco acessos selecionados de carambola, cultivada em três distintas regiões edafoclimáticas de Pernambuco. Os acessos de carambola diferiram significativamente entre si, quanto às concentrações de ácido ascórbico, fenólicos totais e taninos. A significância para os efeitos de ambiente confirmou que os locais de cultivo são heterogêneos, em relação ao potencial produtivo de frutos com diferentes concentrações médias de ácido ascórbico, flavonóis, fenólicos totais e taninos. A interação significativa entre genótipos e ambientes indica que os acessos de carambola apresentam respostas diferenciadas às concentrações de ácido ascórbico, flavonóis, fenólicos totais e taninos, quando cultivadas em diferentes locais. As condições de cultivo da Estação Experimental do IPA Itambé e os acessos IPA-7.2, IPA-22.3 proporcionaram as maiores concentrações de ácido ascórbico, fenólicos totais e taninos.

  12. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  13. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  14. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  15. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  16. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  17. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  18. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  19. Assessment of Genetic Fidelity in <em>Rauvolfia em>s>erpentina em>Plantlets Grown from Synthetic (Encapsulated Seeds Following <em>in Vitroem> Storage at 4 °C

    Directory of Open Access Journals (Sweden)

    Mohammad Anis

    2012-05-01

    Full Text Available An efficient method was developed for plant regeneration and establishment from alginate encapsulated synthetic seeds of <em>Rauvolfia serpentinaem>. Synthetic seeds were produced using <em>in vitroem> proliferated microshoots upon complexation of 3% sodium alginate prepared in Llyod and McCown woody plant medium (WPM and 100 mM calcium chloride. Re-growth ability of encapsulated nodal segments was evaluated after storage at 4 °C for 0, 1, 2, 4, 6 and 8 weeks and compared with non-encapsulated buds. Effects of different media <em>viz>; Murashige and Skoog medium; Lloyd and McCown woody Plant medium, Gamborg’s B5 medium and Schenk and Hildebrandt medium was also investigated for conversion into plantlets. The maximum frequency of conversion into plantlets from encapsulated nodal segments stored at 4 °C for 4 weeks was achieved on woody plant medium supplement with 5.0 μM BA and 1.0 μM NAA. Rooting in plantlets was achieved in half-strength Murashige and Skoog liquid medium containing 0.5 μM indole-3-acetic acid (IAA on filter paper bridges. Plantlets obtained from stored synseeds were hardened, established successfully <em>ex vitroem> and were morphologically similar to each other as well as their mother plant. The genetic fidelity of <em>Rauvolfia em>clones raised from synthetic seeds following four weeks of storage at 4 °C were assessed by using random amplified polymorphic<em> em>DNA (RAPD and inter-simple sequence repeat<em> em>(ISSR markers. All the RAPD and ISSR profiles from generated plantlets were monomorphic and comparable<em> em>to the mother plant, which confirms the genetic<em> em>stability among the clones. This synseed protocol could be useful for establishing a particular system for conservation, short-term storage and production of genetically identical and stable plants before it is released for commercial purposes.

  20. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  1. The EM Earthquake Precursor

    Science.gov (United States)

    Jones, K. B., II; Saxton, P. T.

    2013-12-01

    Many attempts have been made to determine a sound forecasting method regarding earthquakes and warn the public in turn. Presently, the animal kingdom leads the precursor list alluding to a transmission related source. By applying the animal-based model to an electromagnetic (EM) wave model, various hypotheses were formed, but the most interesting one required the use of a magnetometer with a differing design and geometry. To date, numerous, high-end magnetometers have been in use in close proximity to fault zones for potential earthquake forecasting; however, something is still amiss. The problem still resides with what exactly is forecastable and the investigating direction of EM. After the 1989 Loma Prieta Earthquake, American earthquake investigators predetermined magnetometer use and a minimum earthquake magnitude necessary for EM detection. This action was set in motion, due to the extensive damage incurred and public outrage concerning earthquake forecasting; however, the magnetometers employed, grounded or buried, are completely subject to static and electric fields and have yet to correlate to an identifiable precursor. Secondly, there is neither a networked array for finding any epicentral locations, nor have there been any attempts to find even one. This methodology needs dismissal, because it is overly complicated, subject to continuous change, and provides no response time. As for the minimum magnitude threshold, which was set at M5, this is simply higher than what modern technological advances have gained. Detection can now be achieved at approximately M1, which greatly improves forecasting chances. A propagating precursor has now been detected in both the field and laboratory. Field antenna testing conducted outside the NE Texas town of Timpson in February, 2013, detected three strong EM sources along with numerous weaker signals. The antenna had mobility, and observations were noted for recurrence, duration, and frequency response. Next, two

  2. Auto-incompatibilidade em plantas Self-incompatibility in plants

    Directory of Open Access Journals (Sweden)

    Maria Teresa Schifino-Wittmann

    2002-12-01

    Full Text Available A auto-incompatibilidade (AI é a incapacidade de uma planta fértil formar sementes quando fertilizada por seu próprio pólen. É um mecanismo fisiólogico, com base genética, que promove a alogamia, e tem despertado a atenção de geneticistas e melhoristas de plantas. Atualmente, a ênfase nas pesquisas está na identificação e entendimento dos processos moleculares e celulares que levam ao reconhecimento e à rejeição do pólen auto-incompatível, incluindo a identificação, localização e seqüenciamento das proteínas, enzimas e genes envolvidos. Existem dois tipos principais de AI, a gametofítica (AIG, em que a especificidade do pólén é gerada pelo alelo S do genoma haplóide do grão do pólen (gametófito, e a esporofítica (AIE, em que a especificidade é gerada pelo genótipo diplóide da planta adulta (esporófito que deu origem ao grão de pólen. A AIE pode ser homomórfica, quando não existem modificações florais que acompanham o processo, ou heteromórfica, quando, com o processo de AI, ocorrem modificações florais. A reação da AI engloba desde o impedimento da germinação do pólen até o rompimento do tubo polínico. A ocorrência de AI em espécies de interesse econômico pode ter uma importância muito grande, sendo muito positiva em alguns casos e um empecilho em outros, dependendo da parte da planta (vegetativa ou reprodutiva que é colhida e do tipo de reprodução, sexual ou vegetativa. A utilização da AI no melhoramento de plantas é feita há bastante tempo, mas existe uma lacuna entre o grau de detalhamento do conhecimento teórico, como as bases genética e molecular, e a aplicação deste conhecimento no melhoramento.Self-incompatibility (SI is the failure of a fertile plant to set seeds when fertilized with its own pollen. It is a physiological mechanism, with a genetic basis, which promotes allogamy and has drawn geneticists and plant breeders’ attention. Nowadays, the research has put

  3. Classe social: conceitos e esquemas operacionais em pesquisa em saude

    Directory of Open Access Journals (Sweden)

    Rita Barradas Barata

    2013-08-01

    Full Text Available Discute-se a utilização do conceito de classe em pesquisas em saúde, as diferentes abordagens sociológicas de estratificação social e de estrutura de classes, o potencial explicativo do conceito em estudos de determinação social e desigualdades em saúde, os modelos de operacionalização elaborados para uso em pesquisas sociológicas, demográficas ou de saúde e os limites e possibilidades desses modelos. Foram destacados quatro modelos de operacionalização: de Singer para estudo da distribuição de renda no Brasil, adaptado por Barros para uso em pesquisas epidemiológicas; de Bronfman & Tuirán para o censo demográfico mexicano, adaptado por Lombardi et al para pesquisas epidemiológicas; de Goldthorpe para estudos socioeconômicos ingleses, adaptado pela Sociedade Espanhola de Epidemiologia; e o modelo de Wright para pesquisa em sociologia e ciência política, também usado em inquéritos populacionais em saúde. Em conclusão, conceitualmente cada um dos modelos apresentados é coerente com a concepção teórica que os embasam, mas não há como optar por qualquer deles, descartando os demais.

  4. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  5. Dynamic behaviors of laser ablated Si particles

    International Nuclear Information System (INIS)

    Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

    1995-01-01

    The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

  6. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  7. Aspergillus toxigênicos em café e cacau : incidência, produção de micotoxinas e discriminação molecular de espécies de Aspergillus niger por PCR em tempo real

    OpenAIRE

    Aline Morgan Von Hertwig

    2015-01-01

    Resumo: O uso das técnicas moleculares para identificação de micro-organismos é indispensável em pesquisas cientificas. A dificuldade em caracterizar e identificar fungos do gênero Aspergillus ocorre devido ao fato de algumas espécies estarem intimamente relacionadas entre si, e as diferenças morfológicas entre os indivíduos serem praticamente imperceptíveis. O gênero Aspergillus engloba importantes fungos toxigênicos presentes em alimentos. Desta maneira este trabalho teve como objetivo a ca...

  8. Efecto de extractos vegetales de <em>Polygonum hydropiperoidesem>, <em>Solanum nigrumem> y <em>Calliandra pittieriem> sobre el gusano cogollero (<em>Spodoptera frugiperdaem>

    Directory of Open Access Journals (Sweden)

    Lizarazo H. Karol

    2008-12-01

    Full Text Available

    El gusano cogollero <em>Spodoptera frugiperdaem> es una de las plagas que más afectan los cultivos en la región de Sumapaz (Cundinamarca, Colombia. En la actualidad se controla principalmente aplicando productos de síntesis química, sin embargo la aplicación de extractos vegetales surge como una alternativa de menor impacto sobre el ambiente. Este control se emplea debido a que las plantas contienen metabolitos secundarios que pueden inhibir el desarrollo de los insectos. Por tal motivo, la presente investigación evaluó el efecto insecticida y antialimentario de extractos vegetales de barbasco <em>Polygonum hydropiperoidesem> (Polygonaceae, carbonero <em>Calliandra pittieriem> (Mimosaceae y hierba mora <em>Solanum nigrumem> (Solanaceae sobre larvas de <em>S. frugiperdaem> biotipo maíz. Se estableció una cría masiva del insecto en el laboratorio utilizando una dieta natural con hojas de maíz. Posteriormente se obtuvieron extractos vegetales utilizando solventes de alta polaridad (agua y etanol y media polaridad (diclorometano los cuales se aplicaron sobre las larvas de segundo instar. Los resultados más destacados se presentaron con extractos de <em>P. hydropiperoidesem>, obtenidos con diclorometano en sus diferentes dosis, con los cuales se alcanzó una mortalidad de 100% 12 días después de la aplicación y un efecto antialimentario representado por un consumo de follaje de maíz inferior al 4%, efectos similares a los del testigo comercial (Clorpiriphos.

  9. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  10. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  11. Uma arquitetura para integração de dados baseada em ontologia

    OpenAIRE

    Augusto Nogueira de Oliveira Passos, Rômulo

    2006-01-01

    Nos dias atuais, soluções para comércio eletrônico em larga escala devem tratar de vários desafios da integração de informação. Alguns problemas nesta tarefa envolvem o tratamento da explosão do número de mapeamentos e do problema da padronização em si. Muito esforço tem surgido com o objetivo de solucionar a integração em e-Business, entretanto inflando em número e gerando inconsistências. O propósito deste trabalho é fornecer um método utilizando uma camada superior, uma onto...

  12. Characterization of defects in Si and SiO2-Si using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1993-01-01

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

  13. MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

    OpenAIRE

    Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

    2017-01-01

    Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

  14. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  15. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  16. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  17. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  18. Hipervitaminose D em animais

    Directory of Open Access Journals (Sweden)

    Paulo V. Peixoto

    2012-07-01

    Full Text Available Por meio de revisão da literatura, são apresentados dados referentes ao metabolismo da vitamina D, bem como aos principais aspectos toxicológicos, clínicos, bioquímicos, macroscópicos, microscópicos, ultraestruturais, imuno-histoquímicos e radiográficos de animais intoxicados natural e experimentalmente por essa vitamina, em diferentes espécies. Este estudo objetiva demonstrar a existência de muitas lacunas no conhecimento sobre mineralização fisiológica e patológica, em especial na mediação hormonal do fenômeno, bem como alertar para os riscos de ocorrência dessa intoxicação.

  19. A democracia em Cuba

    OpenAIRE

    Zaldívar, Julio César Guanche

    2011-01-01

    O triunfo revolucionário de 1959 consagrou em Cuba um novo conceito de democracia, com o intuito de garantir o acesso à vida política ativa de grandes setores da população, antes excluídos. Para isso, foi desenvolvida uma política de inclusão social com caráter universal. A prática política popular deixou as riquezas do país em mãos da população carente e gerou uma grande mobilidade social, fato que foi central para o aumento da participação popular. O contexto de agressão imperialista e o pr...

  20. Tuberculose Infantil em Portugal

    OpenAIRE

    Carapau, João

    2014-01-01

    Dos números recentemente publicados pela Direcção Geral da Saúde / Núcleo de Tuberculose e Doenças Respiratórias relativos aos anos de 1992 e 1993 e pelo Instituto Nacional de Estatística relativos a 1994, conclui-se que os casos de Tuberculose (TB) notificados pouco têm decrescido nos últimos 15 anos: descida média anual de 6,3% para os casos em geral e 14% para os menores de 15 anos; a taxa global de incidência apurada em 1994 voltou a subir — 51,1 (52,4 no Continente). Para o autor a me...

  1. Grid-trapping of the wood mouse (<em>Apodemus sylvaticusem> in a mediterranean oak-wood (Sicily / Analisi del popolamento di topo selvatico (<em>Apodemus sylvaticusem> in un querceto mediterraneo (Sicilia

    Directory of Open Access Journals (Sweden)

    Maurizio Sarà

    1993-06-01

    Full Text Available Abstract A grid-trapping (CMR Method of the Wood Mouse (<em>A. sylvaticusem> resident population was carried on three sample areas in a Mediterranean Oak-wood (Bosco della Ficuzza, Palermo. Fifty live traps were settled on a 0.5 ha grid at each sample area and permitted to calculate the Petersen-Lincoln Index (modified by Chapman. The relative density in the typical oak-wooded area (20.4/ha is highest than in the ecotonal and gazed sample area (12.6/ha. Analysis of ground permanence shows that the population in the wooded area is more dinamic than in the other area; in the former area a large number of new captures occurs, in fact, each month and the monthly variation of the relative density has a different trend. These results would confirm the indirect data coming from pellets analysis showing how in Sicily the highest densities occur in woodlands (oak-woods, as well as beech forests. The ecological niche of the Wood Mouse, due also to the apparent lack of <em>A. flavicollisem>, is thus larger than in peninsular Italy and continental Europe. The reproductive season lasts over the whole year but the birth peaks occurred in summer (1988 and late fall (1989. Population each year stabilizes for overwintering and later (Jun-Nov is almost completely renowed. Moreover, differences in sex and age trappability in relation to the two mode1 of traps utilized and a low mortality due to the cautions in handling the trapped mice, were recorded. Riassunto Allo scopo di evidenziare le differenze tra i popolamenti di <em>Apodemus sylvaticusem> (Linnaeus, 1758 in relazione all'habitat, sono state effettuate in una tipica querceta mediterranea (Bosco della Ficuzza, PA griglie di trappolamento in tre aree campione, ciascuna con differenti caratteristiche ambientali e morfologiche. Il campionamento, che si è protratto per circa due anni, è stato condotto con il metodo CMR (cattura-marcaggio-ricattura. I risultati ottenuti

  2. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  3. Universidade em ruinas?

    OpenAIRE

    Katuta, Ângela Massumi; UEL/CCE/Departamento de Geociências

    2010-01-01

    A Universidade, desde as suas origens no século XII, sempre esteve atrelada a instituições e setores hegemônicos da sociedade. Segundo Trindade (2000), a sua “invenção” ocorreu em plena Idade Média na Europa, sob a proteção da Igreja romana, sendo que as Universidades de Bolonha (1108) e Paris (1211) foram as primeiras a serem criadas 

  4. Preparação e caracterização de catalisadores baseados em pentóxido de nióbio e óxido de cobre(II) aplicados em reações de esterificação e transesterificação

    OpenAIRE

    Braga, Valdeilson Souza

    2007-01-01

    Os catalisadores contendo Nb O /SiO -Al O , CuO/Nb O /SiO -Al O , 2 5 2 2 3 2 5 2 2 3 Nb O /CCA (CCA=cinza de casca de arroz) cristalina ou amorfa e CuO/CCA 2 5 investigados neste estudo, foram preparados via diferentes rotas (impregnação em meio aquoso (incipiente ou evaporação) ou grafitização em meio orgânico, em variadas proporções (2, 5, 10, 15, 20 e 25 % em massa). Estes materiais foram aplicados em reações de esterificação de ácido acético com álcoois (etanol, n-butanol e iso-pentanol)...

  5. Rapid Development of Microsatellite Markers with 454 Pyrosequencing in a Vulnerable Fish<em>,> the Mottled Skate<em>, Raja em>pulchra>

    Directory of Open Access Journals (Sweden)

    Jung-Ha Kang

    2012-06-01

    Full Text Available The mottled skate, <em>Raja pulchraem>, is an economically valuable fish. However, due to a severe population decline, it is listed as a vulnerable species by the International Union for Conservation of Nature. To analyze its genetic structure and diversity, microsatellite markers were developed using 454 pyrosequencing. A total of 17,033 reads containing dinucleotide microsatellite repeat units (mean, 487 base pairs were identified from 453,549 reads. Among 32 loci containing more than nine repeat units, 20 primer sets (62% produced strong PCR products, of which 14 were polymorphic. In an analysis of 60 individuals from two <em>R. pulchra em>populations, the number of alleles per locus ranged from 1–10, and the mean allelic richness was 4.7. No linkage disequilibrium was found between any pair of loci, indicating that the markers were independent. The Hardy–Weinberg equilibrium test showed significant deviation in two of the 28 single-loci after sequential Bonferroni’s correction. Using 11 primer sets, cross-species amplification was demonstrated in nine related species from four families within two classes. Among the 11 loci amplified from three other <em>Rajidae> family species; three loci were polymorphic. A monomorphic locus was amplified in all three <em>Rajidae> family species and the <em>Dasyatidae> family. Two <em>Rajidae> polymorphic loci amplified monomorphic target DNAs in four species belonging to the Carcharhiniformes class, and another was polymorphic in two Carcharhiniformes species.

  6. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  7. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  8. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  9. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    International Nuclear Information System (INIS)

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  10. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  11. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  12. Acarofauna em plantas ornamentais

    Directory of Open Access Journals (Sweden)

    Jania Claudia Camilo dos Santos

    2014-10-01

    Full Text Available Normal 0 21 false false false PT-BR X-NONE X-NONE O cultivo e o comercio de plantas ornamentais vem cada vez mais ganhando espaço no Brasil, pela grande variedade das espécies existentes e exuberância de suas flores, que oferecem uma maior riqueza ao local. Dessa forma, o objetivo desse trabalho foi realizar o levantamento da população de ácaros associados às plantas ornamentais no município de Arapiraca-AL, em função dos diversos problemas acarretados por essa espécie. O levantamento foi realizado entre os meses de abril a março, através de amostragens mensais de folhas coletadas da parte basal, intermediária e apical de plantas existentes em praças e jardins. Foram coletados 55 ácaros pertencentes à ordem Prostigmata em 20 famílias de plantas. As plantas com as maiores riquezas de ácaros foram as Coleus blumei L. e Bxuxus sempervirens L., que apresentaram 65% dos valores amostrais. Analisando-se as coletas realizadas, pode-se observar que houve uma maior incidência populacional de ácaros na coleta do mês de maio, cuja percentagem foi de 36% de ácaros levantados, sendo que no levantamento dos dados amostrais de março a percentagem encontrada foi de 14%, nas amostragens dos meses de abril e junho, a percentagem amostrada dos dados foi de 22 e 28%, respectivamente. O estudo do levantamento de ácaros em plantas ornamentais permitiu observar a relação entre ácaros e a relação com a planta hospedeira, facilitando posteriormente um estudo mais aprofundado sobre plantas hospedeiras, e pode-se observar que em períodos chuvosos ocorre uma menor incidência populacional.

  13. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  14. Impact resistance of uncoated SiC/SiC composites

    International Nuclear Information System (INIS)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  15. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  16. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  17. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

    CSIR Research Space (South Africa)

    Thabethe, S

    2014-12-01

    Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

  18. Presenza di Istrice <em>Hystrix cristataem> negli argini fluviali: problematiche ed esperienze in provincia di Perugia

    Directory of Open Access Journals (Sweden)

    Luca Convito

    2003-10-01

    Full Text Available A seguito di danneggiamento di argini fluviali da parte dell?Istrice <em>Hystrix cristataem>, si è richiesto al Ministero dell?Ambiente il necessario parere alla cattura e traslocazione della specie da tutti i reticoli fluviali in cui si sono avute segnalazioni. Tra novembre 2001 e ottobre 2002 sono state organizzate tre campagne di contenimento nelle seguenti aree: A Alto Tevere umbro; B Lago Trasimeno; C Valle Umbra. Inizialmente sono state adoperate trappole-galleria per Nutria (N, poi integrate o sostituite con modelli appositamente realizzati per Istrice (Is. A danno: otto sistemi di cunicoli in 618 m di argine a ridosso di coltivazioni; periodo d?intervento: 12/XI-19/XII 2001; operatori: n. 2; trappole: n. 10-N; esca: mais, poi mela; notti trappola totale: n. 168; risultato cattura: n. 2 istrici (3,15 ind./mese e n. 1 Nutria (<em>Myocastor coypusem>; B danno: tre sistemi di cunicoli in 1.540 m di argine pensile; periodo d?intervento: 01/II-17/III 2002; operatori: n. 2; trappole utilizzate: n. 10-Is ?ghigliottina? + n. 1- Is ?modificata?; esca: mela, poi granaglie; notti trappola totale.: n. 224; risultato cattura: n. 7 istrici (4,03 ind./mese e n. 6 nutrie; C danno: oltre venti sistemi di cunicoli in 21.050 m di argini pensili; periodo intervento: 25/VI-25/X 2002; operatori: n.1; trappole: n. 7-Is ?modificate? + n. 9-N; esca: granaglie; notti trappola tot.: n. 641; risultato cattura: n. 1 Istrice (0,4 ind./mese e n. 1 Gatto domestico. Catturando 3-4 ind./mese, si è riusciti a difendere argini ?sensibili? dalla minaccia degli istrici. Determinante è risultato il traslocamento di animali adulti, più legati dei giovani ad un particolare sito e restii pertanto ad abbandonarlo anche se disturbati. Dalle aree A e B sono stati spostati rispettivamente due e tre adulti e, anche se la specie è ancora presente, i punti ?critici? di tali corsi d?acqua non hanno presentato altri problemi. I risultati migliori (sito B si sono ottenuti con l

  19. Densità di Lepre (<em>Lepus europaeusem> e Silvilago (<em>Sylvilagus floridanusem> in ambienti planiziali

    Directory of Open Access Journals (Sweden)

    Sandro Bertolino

    2003-10-01

    Full Text Available Il silvilago (<em>Sylvilagus floridanusem> è un leporide d?origine nordamericana, introdotto in Italia a partire dal 1966 a scopo venatorio. Attualmente la specie è diffusa soprattutto in Piemonte e nella parte occidentale della Lombardia. Il silvilago potrebbe interferire con l?autoctona lepre comune (<em>Lepus europaeusem>, anche se i dati al riguardo sono limitati. Nell?autunno-inverno 2002-2003 abbiamo condotto dei censimenti notturni con faro in alcune aree protette lungo il fiume Po (Breme, Fontanetto Po, Pobietto e il torrente Orba (Predosa, Monferrino. I censimenti erano effettuati percorrendo con automezzo itinerari prefissati. Il territorio ai lati del percorso era illuminato con faro alogeno (100 W, segnando periodicamente l?ampiezza della fascia illuminata. L?area effettivamente censita è stata in seguito verificata mediante GIS ArcView, usando una cartografia informatizzata d?uso del suolo (1:10.000. L?uso reale del suolo al momento del censimento (esempio: arato, grano o stoppie è stato verificato durante sopralluoghi diurni. Per ogni area sono state condotte tre repliche del censimento. Di seguito sono riportate per ogni località le densità rilevate (individui/Km² rispettivamente di lepre comune e silvilago. Breme (1,7; 32,8, Fontanetto Po (0; 4,4, Pobietto (0,3; 13,9, Predosa (1,1; 19,5, Monferrino (29,6; 110,4. Solo l?area di Monferrino è risultata ospitare una popolazione di lepri con densità corrispondente a territori ad alta vocazionalità. La zona censita si trova a cavallo tra una riserva regionale e una ZRC della Provincia di Alessandria. Nella stessa area il silvilago presenta una densità elevata, ma comunque inferiore ai valori massimi riportati negli Stati Uniti. Nelle altre aree sono state osservate pochissime lepri. Tale scarsità è probabilmente legata alla presenza di popolazioni relitte e habitat non sempre idonei. Il silvilago, per quanto non abbondante come a Monferrino, è presente con popolazioni

  20. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  1. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    International Nuclear Information System (INIS)

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  2. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  3. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  4. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  5. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  6. How <em>Varroa> Parasitism Affects the Immunological and Nutritional Status of the Honey Bee, <em>Apis melliferaem>

    Directory of Open Access Journals (Sweden)

    Katherine A. Aronstein

    2012-06-01

    Full Text Available We investigated the effect of the parasitic mite <em>Varroa destructorem> on the immunological and nutritional condition of honey bees, <em>Apis melliferaem>, from the perspective of the individual bee and the colony. Pupae, newly-emerged adults and foraging adults were sampled from honey bee colonies at one site in S. Texas, USA. <em>Varroa>‑infested bees displayed elevated titer of Deformed Wing Virus (DWV, suggestive of depressed capacity to limit viral replication. Expression of genes coding three anti-microbial peptides (<em>defensin1, abaecin, hymenoptaecinem> was either not significantly different between <em>Varroa>-infested and uninfested bees or was significantly elevated in <em>Varroa>-infested bees, varying with sampling date and bee developmental age. The effect of <em>Varroa> on nutritional indices of the bees was complex, with protein, triglyceride, glycogen and sugar levels strongly influenced by life-stage of the bee and individual colony. Protein content was depressed and free amino acid content elevated in <em>Varroa>-infested pupae, suggesting that protein synthesis, and consequently growth, may be limited in these insects. No simple relationship between the values of nutritional and immune-related indices was observed, and colony-scale effects were indicated by the reduced weight of pupae in colonies with high <em>Varroa> abundance, irrespective of whether the individual pupa bore <em>Varroa>.

  7. O sentido do uso ritual da ayahuasca em trabalho voltado ao tratamento e recuperação da população em situação de rua em São Paulo

    OpenAIRE

    Bruno Ramos Gomes

    2011-01-01

    Esta pesquisa visa a compreender o uso ritual da ayahuasca (chamado de Daime pelos participantes) na recuperação de pessoas em situação de rua pela Unidade de Resgate Flor das Águas Padrinho Sebastião, grupo situado em São Paulo. A ayahuasca é um chá feito da mistura de algumas plantas amazônicas, mais comumente o jagube e a chacrona, utilizado de forma ritual por populações indígenas e mestiças há muito tempo, e que leva a uma alteração na experiência de si e do mundo em sua ingestão. Vem ga...

  8. Synthesis and Spectroscopic Analysis of Novel 1<em>H-Benzo[d>]imidazoles Phenyl Sulfonylpiperazines

    Directory of Open Access Journals (Sweden)

    Amjad M. Qandil

    2012-05-01

    Full Text Available A group of benzimidazole analogs of sildenafil, 3-benzimidazolyl-4-methoxy-phenylsulfonylpiperazines 2–4 and 3-benzimidazolyl-4-methoxy-<em>N,N>-dimethyl- benzenesulfonamide (5, were efficiently synthesized. Compounds 2–5 were characterized by NMR and MS and contrary to the reported mass spectra of sildenafil, the spectra of the piperazine-containing compounds 2–4 showed a novel fragmentation pattern leading to an <em>m/z> = 316. A mechanism for the formation of this fragment was proposed.

  9. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  10. Matrix densification of SiC composites by sintering process

    International Nuclear Information System (INIS)

    Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

    2007-02-01

    The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

  11. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  12. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  13. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  14. Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

    Science.gov (United States)

    Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

    2018-05-01

    Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

  15. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  16. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  17. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  18. Notes on winter feeding habits of the pine marten <em>Martes martesem> L. in Val Gressoney (Western Italian Alps

    Directory of Open Access Journals (Sweden)

    Paolo Agnelli

    1995-12-01

    Full Text Available Abstract A first report on the feeding habits of a mainland population of the pine marten (<em>Martes martesem> in Italy is presented here. The winter food of this carnivore in Western Alps (altitude 1800-2500 m a.s.1. is described, using stomach analysis. Both volume and frequency of occurrence of different food items were quantified. Mammals and wild fruits represent the main food categories. The presence of the small mammal species in the diet is discussed. Riassunto Note sulla dieta invernale della martora <em>Martes Martesem> L. in Val Gressoney (Alpi occidentali italiane - Le abitudini alimentari della martora (<em>Martes martesem> nell'Italia peninsulare vengono descritte per la prima volta sulla base del contenuto stomacale di 9 esemplari provenienti dalle Alpi occidentali (fascia altitudinale compresa tra i 1800 e 2500 m s.1.m.. I dati raccolti si riferiscono a1 periodo invernale e sono stati espressi come frequenza percentuale e volume percentuale stimato. I mammiferi e i frutti selvatici costituiscono le principali categorie alimentari. La presenza delle specie di micromammiferi rinvenuti viene discussa.

  19. Crescimento em altura dominante do Pinus elliottii e Pinus taeda em solos arenizados degradados no oeste do Rio Grande do Sul

    Directory of Open Access Journals (Sweden)

    Paulo Renato Schneider

    2013-11-01

    Full Text Available A introdução de espécies florestais de rápido crescimento em áreas com solos arenizados e degradados pode ser uma alternativa tanto para a prevenção como para a minimização desse problema. O trabalho objetivou avaliar o crescimento em altura dominante do Pinus elliottii Engelm. e Pinus taeda L. em relação aos solos arenizados e degradados por ação antrópica, no oeste do estado do Rio Grande do Sul (RS. Para isso, foram selecionadas árvores dominantes em povoamentos com 29 anos de idade, em áreas com dois níveis de degradação, as quais foram abatidas e seccionadas pelo método de Smalian para a obtenção de discos de madeira para a análise dendrocronológica e determinação da altura dominante por idade, no período de 1982 a 2010. Os crescimentos em altura dominante dessas espécies, quando comparados entre si e por nível de degradação do solo, apresentaram tendências diferentes de desenvolvimento no tempo, indicando a presença de polimorfismo das curvas.

  20. siRNA and innate immunity.

    Science.gov (United States)

    Robbins, Marjorie; Judge, Adam; MacLachlan, Ian

    2009-06-01

    Canonical small interfering RNA (siRNA) duplexes are potent activators of the mammalian innate immune system. The induction of innate immunity by siRNA is dependent on siRNA structure and sequence, method of delivery, and cell type. Synthetic siRNA in delivery vehicles that facilitate cellular uptake can induce high levels of inflammatory cytokines and interferons after systemic administration in mammals and in primary human blood cell cultures. This activation is predominantly mediated by immune cells, normally via a Toll-like receptor (TLR) pathway. The siRNA sequence dependency of these pathways varies with the type and location of the TLR involved. Alternatively nonimmune cell activation may also occur, typically resulting from siRNA interaction with cytoplasmic RNA sensors such as RIG1. As immune activation by siRNA-based drugs represents an undesirable side effect due to the considerable toxicities associated with excessive cytokine release in humans, understanding and abrogating this activity will be a critical component in the development of safe and effective therapeutics. This review describes the intracellular mechanisms of innate immune activation by siRNA, the design of appropriate sequences and chemical modification approaches, and suitable experimental methods for studying their effects, with a view toward reducing siRNA-mediated off-target effects.

  1. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  2. Anestesia Diploica em Endodontia

    OpenAIRE

    Macedo, Ricardo Ribeiro Veiga de

    2013-01-01

    Trabalho final do 5º ano com vista à atribuição do grau de mestre no âmbito do ciclo de estudos de Mestrado Integrado em Medicina Dentária apresentado à Faculdade de Medicina da Universidade de Coimbra. Objetivos Comparar a eficácia das técnicas de anestesia convencionais, a anestesia infiltrativa periapical, com a anestesia diploica. Metodologia Foram selecionados 32 voluntários, saudáveis, aos quais foram administradas ambas as técnicas anestésicas no dente 1.4. Numa primeira fase os...

  3. Burnout em Cuidadores Formais

    OpenAIRE

    Silva, Juliana Marisa Fernandes

    2016-01-01

    Dissertação apresentada à Universidade Fernando Pessoa como parte dos requisitos para a obtenção do grau de Mestre em Psicologia, ramo de Psicologia Clínica e da Saúde Este estudo é sobre a Síndrome de Burnout e teve como objetivo geral compreender se o Burnout está presente nos cuidadores formais da Santa Casa da Misericórdia de Castelo de Paiva e quais as variáveis socioprofissionais que poderão exercer influência no seu aparecimento. Pretendeu-se avaliar o Burnout dos cuidadores a tr...

  4. Antioxidant Profile of <em>Trifolium pratenseem> L.

    Directory of Open Access Journals (Sweden)

    Heidy Schwartsova

    2012-09-01

    Full Text Available In order to examine the antioxidant properties of five different extracts of <em>Trifolium pratenseem> L. (Leguminosae leaves, various assays which measure free radical scavenging ability were carried out: 1,1-diphenyl-2-picrylhydrazyl, hydroxyl, superoxide anion and nitric oxide radical scavenger capacity tests and lipid peroxidation assay. In all of the tests, only the H2O and (to some extent the EtOAc extracts showed a potent antioxidant effect compared with BHT and BHA, well-known synthetic antioxidants. In addition, <em>in vivo em>experiments were conducted with antioxidant systems (activities of GSHPx, GSHR, Px, CAT, XOD, GSH content and intensity of LPx in liver homogenate and blood of mice after their treatment with extracts of <em>T. pratenseem> leaves, or in combination with CCl4. Besides, in the extracts examined the total phenolic and flavonoid amounts were also determined, together with presence of the selected flavonoids: quercetin, luteolin, apigenin, naringenin and kaempferol, which were studied using a HPLC-DAD technique. HPLC-DAD analysis showed a noticeable content of natural products according to which the examined <em>Trifolium pratenseem> species could well be regarded as a promising new source of bioactive natural compounds, which can be used both as a food supplement and a remedy.

  5. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  6. Characterization of SiC–SiC composites for accident tolerant fuel cladding

    Energy Technology Data Exchange (ETDEWEB)

    Deck, C.P., E-mail: Christian.Deck@ga.com; Jacobsen, G.M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC–SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC–SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  7. Mechanism of Si intercalation in defective graphene on SiC

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2012-01-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density

  8. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  9. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  10. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  11. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  12. A sensitive optical sensor based on DNA-labelled Si@SiO2 core ...

    Indian Academy of Sciences (India)

    2017-10-31

    Oct 31, 2017 ... Si@SiO2 core–shell nanoparticles were proposed for the development of fluorescent mercury ... orophores, due to their unique optical properties, such as .... were made by evaporating one drop of the sample solution on.

  13. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Rod-like β-FeSi2 phase grown on Si (111) substrate

    International Nuclear Information System (INIS)

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  15. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  16. Proximate Composition, Nutritional Attributes and Mineral Composition of <em>Peperomia> <em>pellucida> L. (Ketumpangan Air Grown in Malaysia

    Directory of Open Access Journals (Sweden)

    Maznah Ismail

    2012-09-01

    Full Text Available This study presents the proximate and mineral composition of <em>Peperomia> <em>pellucida> L., an underexploited weed plant in Malaysia. Proximate analysis was performed using standard AOAC methods and mineral contents were determined using atomic absorption spectrometry. The results indicated <em>Peperomia> <em>pellucida> to be rich in crude protein, carbohydrate and total ash contents. The high amount of total ash (31.22% suggests a high-value mineral composition comprising potassium, calcium and iron as the main elements. The present study inferred that <em>Peperomia> <em>pellucida> would serve as a good source of protein and energy as well as micronutrients in the form of a leafy vegetable for human consumption.

  17. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  18. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  19. Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate

    International Nuclear Information System (INIS)

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-01-01

    Epitaxial β-FeSi 2 thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi 2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements

  20. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  1. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  2. O insight em psiquiatria

    Directory of Open Access Journals (Sweden)

    Ana Margarida P. Cardoso

    2008-12-01

    Full Text Available O sinal de que algo está a acontecer contribui para que o paciente reconheça que alguma coisa de estranho se está a passar consigo. Este reconhecimento faz com que o sujeito possa desempenhar uma função activa e seja um elemento colaborante do seu processo de recuperação. Cada doença apresenta, contudo, diferentes sintomas, uma vez que cada doença psiquiátrica consiste em diferentes perturbações com diversos efeitos sobre o funcionamento mental. Desta maneira, o fenómeno do insight que é registado em cada doença é diferente e expressa-se sob diferentes formas, não somente devido às manifestações clínicas da doença mas também devido às características individuais do sujeito.

  3. Antibioticos profilaticos em neurocirurgia

    Directory of Open Access Journals (Sweden)

    Reynaldo A. Brandt

    1979-03-01

    Full Text Available O índice de infecções pós-operatórias em pacientes neuro-cirúrgicos que receberam antibióticos profiláticos neste período foi comparado com o de pacientes que não receberam antibióticos. Infecções ocorreram em proporções significativamente maiores nos pacientes que receberam antibióticos, particularmente naqueles com afecções intracranianas graves; estas infecções foram graves e fatais na maioria dos casos. A administração de antibióticos profiláticos nestes pacientes não só foi incapaz de prevenir o aparecimento de infecções pós-operatórias, como aparentemente favoreceu o seu desenvolvimento. Tal se deveu, provavelmente, à destruição do equilíbrio microbiano no organismo, favorecendo o desenvolvimento de germes patogênicos e resistentes aos antibióticos usuais

  4. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  5. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  6. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Science.gov (United States)

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  7. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  8. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  9. A democracia em Cuba

    Directory of Open Access Journals (Sweden)

    Julio César Guanche Zaldívar

    2011-01-01

    Full Text Available O triunfo revolucionário de 1959 consagrou em Cuba um novo conceito de democracia, com o intuito de garantir o acesso à vida política ativa de grandes setores da população, antes excluídos. Para isso, foi desenvolvida uma política de inclusão social com caráter universal. A prática política popular deixou as riquezas do país em mãos da população carente e gerou uma grande mobilidade social, fato que foi central para o aumento da participação popular. O contexto de agressão imperialista e o próprio desenvolvimento do processo produziram a consolidação de noções que limitaram a participação popular: o apogeu da burocracia, a compreensão da unidade como unanimidade e o seguimento, em certa medida, de correntes do marxismo soviético. Os desafios atuais para aprofundar a democracia em Cuba se apresentam em três planos: socializar o poder, promover a sociodiversidade e desenvolver a ideologia revolucionária.El triunfo revolucionario de 1959 consagró en Cuba un nuevo concepto de democracia, basado en garantizar acceso a la vida política activa a grandes sectores poblacionales, antes excluidos de ella. Para ello desarrolló una política de inclusión social con carácter universal. La práctica política popular puso las riquezas del país en manos de los desposeídos y generó gran movilidad social, hecho que resultó clave para el aumento de la participación popular. El contexto de agresión imperialista y el propio desarrollo del proceso produjo el afianzamiento de nociones que limitaron la participación popular: el auge de la burocracia, la comprensión de la unidad como unanimidad y el seguimiento, en parte, de corrientes del marxismo soviético. Los desafíos actuales se presentan en tres planos para profundizar la democracia en Cuba: socializar el poder, promover la sociodiversidad y desarrollar la ideología revolucionaria.The revolutionary triumph of 1959 established in Cuba a new concept of democracy, one that

  10. Identified EM Earthquake Precursors

    Science.gov (United States)

    Jones, Kenneth, II; Saxton, Patrick

    2014-05-01

    Many attempts have been made to determine a sound forecasting method regarding earthquakes and warn the public in turn. Presently, the animal kingdom leads the precursor list alluding to a transmission related source. By applying the animal-based model to an electromagnetic (EM) wave model, various hypotheses were formed, but the most interesting one required the use of a magnetometer with a differing design and geometry. To date, numerous, high-end magnetometers have been in use in close proximity to fault zones for potential earthquake forecasting; however, something is still amiss. The problem still resides with what exactly is forecastable and the investigating direction of EM. After a number of custom rock experiments, two hypotheses were formed which could answer the EM wave model. The first hypothesis concerned a sufficient and continuous electron movement either by surface or penetrative flow, and the second regarded a novel approach to radio transmission. Electron flow along fracture surfaces was determined to be inadequate in creating strong EM fields, because rock has a very high electrical resistance making it a high quality insulator. Penetrative flow could not be corroborated as well, because it was discovered that rock was absorbing and confining electrons to a very thin skin depth. Radio wave transmission and detection worked with every single test administered. This hypothesis was reviewed for propagating, long-wave generation with sufficient amplitude, and the capability of penetrating solid rock. Additionally, fracture spaces, either air or ion-filled, can facilitate this concept from great depths and allow for surficial detection. A few propagating precursor signals have been detected in the field occurring with associated phases using custom-built loop antennae. Field testing was conducted in Southern California from 2006-2011, and outside the NE Texas town of Timpson in February, 2013. The antennae have mobility and observations were noted for

  11. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  12. Addimer diffusions on Si(100)

    International Nuclear Information System (INIS)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  13. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  14. Going further South: new data on the breeding of <em>Nyctalus noctulaem> (Schreber, 1774 in Central Europe

    Directory of Open Access Journals (Sweden)

    Tamás Görföl

    2009-11-01

    Full Text Available Abstract We collected data on the reproduction of <em>Nyctalus noctulaem> in Hungary by mist-netting and monitoring bat boxes. The capture or observation of juveniles and lactating females were considered evidence of breeding. A total of 1413 <em>N. noctulaem> were mist-netted in four study areas, corresponding to 24 new breeding locations for Hungary. In southern Hungary, one breeding colony with 20-25 individuals was observed in a bat box in a protected park, while another was found in the hollow of a white poplar. Twenty lactating females and 3 juveniles were mist-netted in the Zemplén Mountains. Our data document the regular breeding of the species in Hungary, the breeding area being wider than previously reported. Further breeding colonies are likely to be located in the floodplain forests of some main rivers, such as the Tisza and the Danube. Riassunto Sempre più a sud: nuovi dati sull’areale riproduttivo di <em>Nyctalus noctulaem> (Schreber, 1774 in Europa centrale Tramite cattura con reti e il monitoraggio di cassette nido, sono stati raccolti dati inediti sulla riproduzione di <em>Nyctalus noctulaem> in Ungheria. Sono stati considerati prove certe di attività riproduttiva la cattura o l’osservazione di giovani o di femmine in allattamento. Sono stati censiti 1413 esemplari, per un totale di 24 nuovi siti di riproduzione ungheresi. Nell’Ungheria meridionale sono state osservate due nursery, una, con 20-25 individui, in una cassetta nido posizionata in un’area protetta e una nella cavità di un pioppo bianco. Venti femmine in allattamento e 3 giovani sono stati catturati nelle Zemplén Mountains. I dati raccolti dimostrano che la specie si riproduce regolarmente in Ungheria e che il suo areale riproduttivo è più esteso di quanto precedentemente segnalato. Ulteriori colonie riproduttive potrebbero essere localizzate nelle foreste ripariali dei principali fiumi

  15. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  16. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    International Nuclear Information System (INIS)

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  17. SI konkurss / Anna Roomet

    Index Scriptorium Estoniae

    Roomet, Anna

    2006-01-01

    Konkursist, auhinnatseremooniast ja ekspositsioonist Arhitektuuri- ja Disainigaleriis, žürii koosseis. Intervjuu eesti parima noore disaineri preemia SÄSI pälvinud Pavel Sidorenko ning väikese SÄSI saanud Björn Koobi, Ülle Jehe ja Igor Volkoviga

  18. Intranasal delivery of antiviral siRNA.

    Science.gov (United States)

    Barik, Sailen

    2011-01-01

    Intranasal administration of synthetic siRNA is an effective modality of RNAi delivery for the prevention and therapy of respiratory diseases, including pulmonary infections. Vehicles used for nasal siRNA delivery include established as well as novel reagents, many of which have been recently optimized. In general, they all promote significant uptake of siRNA into the lower respiratory tract, including the lung. When properly designed and optimized, these siRNAs offer significant protection against respiratory viruses such as influenza virus, parainfluenza virus and respiratory syncytial virus (RSV). Nasally administered siRNA remains within the lung and does not access systemic blood flow, as judged by its absence in other major organs such as liver, heart, kidney, and skeletal muscle. Adverse immune reaction is generally not encountered, especially when immunogenic and/or off-target siRNA sequences and toxic vehicles are avoided. In fact, siRNA against RSV has entered Phase II clinical trials in human with promising results. Here, we provide a standardized procedure for using the nose as a specific route for siRNA delivery into the lung of laboratory animals. It should be clear that this simple and efficient system has enormous potential for therapeutics.

  19. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  20. Back-contacted BaSi

    NARCIS (Netherlands)

    Vismara, R.; Isabella, O.; Zeman, M.

    2017-01-01

    We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for

  1. Natural 32Si as environmental tracer

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2005-01-01

    There is a pressing need for an effective dating tool to cover the historical past. Cosmogenic 32 Si, with a half-life of ca. 140 years, is ideally suited to provide time information in the range 50-1000 years. Detection of 32 Si is, however, very difficult due to extremely low natural concentrations and isotopic ratios. (author). 2 refs

  2. SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

    Science.gov (United States)

    Chanadee, Tawat

    2017-11-01

    Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

  3. Low-temperature Au/a-Si wafer bonding

    International Nuclear Information System (INIS)

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  4. SISTEMAS DE CULTIVO DE MILHO EM CONSÓRCIO DE SUBSTITUIÇÃO E EM SUCESSÃO A GIRASSOL

    Directory of Open Access Journals (Sweden)

    Michelangelo Müzell Trezzi

    1994-12-01

    Full Text Available A consorciação e a sucessão de culturas constituem-se nas principais formas de intensificação de cultivos, sendo alternativas promissoras para a pequena propriedade rural. O presente trabalho foi conduzido em Eldorado do Sul, Rio Grande do Sul. no ano agrícola 1991/92 com os objetivos de comparar os sistemas de implantação de milho em consórcio de substituição e em sucessão a girassol com seus respectivos monocultivos e entre si e de determinar a melhor combinação de ciclos de cultivares de girassol e milho nestes sistemas. Os tratamentos constaram do estabelecimento de uma cultivar de ciclo precoce (Cargill 805 ou longo (AG 106 de milho, em consórcio de substituição ou em sucessão a uma cultivar de ciclo precoce (Contisol 711 ou longo (Dekalb 180 de girassol, estabelecidas em final de julho, e dos respectivos monocultivos de milho sem girassol como cultura antecessora. Não houve diferença entre os rendimentos de grãos de milho em sistemas de consórcio de substituição e de sucessão em relação aos seus respectivos monocultivos, independentemente do ciclo da cultivar utilizada. Somente o consórcio de substituição de cultivares de ciclo precoce de milho e girassol produziu rendimentos de grãos superiores ao sistema de sucessão.

  5. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  6. Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

    International Nuclear Information System (INIS)

    Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

    2005-01-01

    Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

  7. Osteoporose em caprinos

    Directory of Open Access Journals (Sweden)

    Fábio B. Rosa

    2013-04-01

    Full Text Available Foi realizado um estudo de casos de osteoporose em caprinos provenientes de uma propriedade na área de abrangência do LPV-UFSM, determinando a epidemiologia, o quadro clínico-patológico e discutindo os prováveis mecanismos patogenéticos. Cinco cabras, fêmeas, SRD, de seis meses a seis anos de idade foram afetadas. As cabras eram mantidas em campo nativo, sem suplementação com ração e sob superlotação. Os principais sinais clínicos foram emagrecimento, dificuldade de locomoção e permanência em decúbito por longos períodos. As principais alterações macroscópicas nos ossos examinados foram vistas nas superfícies de corte e caracterizavam-se por depleção do osso esponjoso (porosidade e redução acentuada da espessura do osso cortical. Havia também marcada atrofia serosa da gordura da medula óssea. Microscopicamente, nas regiões avaliadas (úmero proximal, rádio distal, fêmur distal, tíbia proximal e corpos das vértebras lombares foi observada redução moderada a acentuada do número e da espessura das trabéculas ósseas nas epífises e metáfises dos ossos longos e nos corpos vertebrais. Os achados clínico-patológicos indicaram que a osteoporose observada provavelmente foi causada pela desnutrição. As alterações ósseas (diminuição no número e na espessura das trabéculas do osso esponjoso sugerem que ambos os mecanismos, má formação óssea e reabsorção óssea aumentada, contribuíram para a ocorrência de osteoporose nos caprinos deste estudo.

  8. Diffusion in ordered Fe-Si alloys

    International Nuclear Information System (INIS)

    Sepiol, B.; Vogl, G.

    1995-01-01

    The measurement of the diffusional Moessbauer line broadening in single crystalline samples at high temperatures provides microscopic information about atomic jumps. We can separate jumps of iron atoms between the various sublattices of Fe-Si intermetallic alloys (D0 3 structure) and measure their frequencies. The diffusion of iron in Fe-Si samples with Fe concentrations between 75 and 82 at% shows a drastic composition dependence: the jump frequency and the proportion between jumps on Fe sublattices and into antistructure (Si) sublattice positions change greatly. Close to Fe 3 Si stoichiometry iron diffusion is extremely fast and jumps are performed exclusively between the three Fe sublattices. The change in the diffusion process when changing the alloy composition from stoichiometric Fe 3 Si to the iron-rich side is discussed. (orig.)

  9. DLC-Si protective coatings for polycarbonates

    Directory of Open Access Journals (Sweden)

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  10. SiC for microwave power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-16

    The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

  11. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  12. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  13. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  14. Riqueza de galhas entomógenas em áreas antropizadas e preservadas de caatinga

    Directory of Open Access Journals (Sweden)

    Sheila Patricia Carvalho-Fernandes

    2012-04-01

    Full Text Available Insetos indutores de galhas, também denominados cecidógenos, são considerados mais especializados por possuírem interação direta com tecidos internos da planta, modificando-os em seu benefício e tornando-se mais dependentes da espécie hospedeira. Este estudo investigou a fauna de insetos galhadores em espécies hospedeiras da Caatinga, em ambientes com diferentes intensidades de ação antrópica. As áreas foram selecionadas de acordo com uma escala de sucessão ecológica (preservadas, intermediárias e antropizadas, sendo três réplicas de cada, totalizando nove áreas. Em cada área foram amostradas oito parcelas de 10 m² cada, distanciadas 10 m entre si. Foram encontrados 25 morfotipos de galhas distribuídos em 18 espécies hospedeiras pertencentes a oito famílias vegetais. Fabaceae foi a família com maior riqueza de galhas, com seis morfotipos, sendo Caesalpinia pyramidalis Tul. a espécie com maior número de galhas, com quatro morfotipos. Em relação aos órgãos atacados, 68% das galhas ocorreram em folhas, 28% em ramos e 4% em botões florais. A maioria das galhas encontradas ocorreu isoladamente (84%, glabra (56% e de formas esféricas (32%, amorfas (28%, discoides (12% e globoides (12%. No estrato arbóreo foi encontrada a maior riqueza de galhas, com 16 morfotipos, seguido do estrato arbustivo e herbáceo, respectivamente com sete e dois morfotipos. A riqueza de galhas sofreu influência do grau de conservação das áreas, e houve diferenças entre os ambientes preservados e antropizados.

  15. Four Novel Cellulose Synthase (CESA Genes from <em>Birch> (<em>Betula platyphylla em>Suk. Involved in Primary and Secondary Cell Wall Biosynthesis

    Directory of Open Access Journals (Sweden)

    Xuemei Liu

    2012-09-01

    Full Text Available Cellulose synthase (CESA, which is an essential catalyst for the generation of plant cell wall biomass, is mainly encoded by the <em>CesA> gene family that contains ten or more members. In this study; four full-length cDNAs encoding CESA were isolated from<em> Betula platyphyllaem> Suk., which is an important timber species, using RT-PCR combined with the RACE method and were named as <em>BplCesA3em>, <em>−4em>,> −7 em>and> −8em>. These deduced CESAs contained the same typical domains and regions as their <em>Arabidopsis> homologs. The cDNA lengths differed among these four genes, as did the locations of the various protein domains inferred from the deduced amino acid sequences, which shared amino acid sequence identities ranging from only 63.8% to 70.5%. Real-time RT-PCR showed that all four <em>BplCesAs> were expressed at different levels in diverse tissues. Results indicated that BplCESA8 might be involved in secondary cell wall biosynthesis and floral development. BplCESA3 appeared in a unique expression pattern and was possibly involved in primary cell wall biosynthesis and seed development; it might also be related to the homogalacturonan synthesis. BplCESA7 and BplCESA4 may be related to the formation of a cellulose synthase complex and participate mainly in secondary cell wall biosynthesis. The extremely low expression abundance of the four BplCESAs in mature pollen suggested very little involvement of them in mature pollen formation in <em>Betula>. The distinct expression pattern of the four <em>BplCesAs> suggested they might participate in developments of various tissues and that they are possibly controlled by distinct mechanisms in <em>Betula.>

  16. <em>N>-Substituted 5-Chloro-6-phenylpyridazin-3(2<em>H>-ones: Synthesis, Insecticidal Activity Against <em>Plutella xylostella em>(L. and SAR Study

    Directory of Open Access Journals (Sweden)

    Song Yang

    2012-08-01

    Full Text Available A series of <em>N>-substituted 5-chloro-6-phenylpyridazin-3(2<em>H>-one derivatives were synthesized based on our previous work; all compounds were characterized by spectral data and tested for <em>in vitroem> insecticidal activity against <em>Plutella xylostellaem>. The results showed that the synthesized pyridazin-3(2<em>H>-one compounds possessed good insecticidal activities, especially the compounds 4b, 4d, and 4h which showed > 90% activity at 100 mg/L. The structure-activity relationships (SAR for these compounds were also discussed.

  17. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  18. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  19. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Science.gov (United States)

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  20. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    Directory of Open Access Journals (Sweden)

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  1. Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

    Science.gov (United States)

    Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

    2018-06-01

    Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

  2. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  3. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  4. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  5. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  6. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  7. INDICADORES EM SANEAMENTO

    OpenAIRE

    Costa, Samuel Alves Barbi; Côrtes, Larissa Silveira; Coelho Netto, Taiana; Freitas Junior, Moacyr Moreira de

    2016-01-01

    Este artigo se propõe a analisar a evolução dos prestadores de serviços de saneamento do estado de MinasGerais entre os anos de 2005 e 2010 com base nos indicadores do Sistema Nacional de Informações em Saneamento(SNIS). Foram definidos parâmetros técnicos para a análise dos indicadores, classificados os resultados como satisfatórios(verdes) ou insatisfatórios (vermelhos). Esta categorização atende a concepção da Regulação Sunshine, trazendo à tona omonitoramento do progresso das ações no set...

  8. Em favor da talassografia

    Directory of Open Access Journals (Sweden)

    Jean-Louis Boudou

    2001-01-01

    Full Text Available A Talassografia (“descrição do mar” interessa-sepelos impactos físicos, biológicos, ecológicos... culturais da violenta antropização dos ambientes costeiros (oceânicos e continentais, caracterizados pelaexigüidade, vulnerabilidade, fragilidade e plasticidade. Como o Brasil é um “país marítimo”, os geó-grafos (os talassógrafos brasileiros são convidadosa intensificar suas pesquisas nas áreas costeiras e acriar novas estruturas para divulgá-las: Revista, Encontros, Associação, Pós-Graduação... tudo em prolda talassografia.

  9. Diários de viagem de Anísio Teixeira: razões e sentidos de uma escrita de "si" e do "outro"

    Directory of Open Access Journals (Sweden)

    Silmara Fátima Cardoso

    Full Text Available Tem por pretensão analisar dois diários produzidos por Anísio Teixeira em suas viagens à Europa em 1925 e aos Estados Unidos em 1927. O viajante lança mão da escrita diária para registrar o cotidiano a bordo, ações de sujeitos, aspectos das cidades, suas reflexões em relação à vida, a si, à política, à educação, à religião católica, à América, além dos objetivos e propósitos de suas viagens. Utilizando esses diários como fonte privilegiada de estudo, a autora busca compreender como Anísio Teixeira representa e projeta na sua escrita uma imagem de "si" e do "outro" e explicita estar consciente das dificuldades em analisar e interpretar essas fontes, já que, conforme afirma Umberto Eco, "um texto é um universo indefinidamente aberto em que o intérprete pode descobrir interligações infinitas", sendo a linguagem "incapaz de apreender um sentido único e preexistente".

  10. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  11. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  12. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  13. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  14. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  15. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  16. Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

    CERN Document Server

    Wu, X L; Tang, N; Deng, S S; Bao, X M

    2003-01-01

    LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

  17. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    International Nuclear Information System (INIS)

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  18. Isotopic effects in sub-barrier fusion of Si + Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

    2018-04-01

    Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

  19. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  20. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  1. Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

    International Nuclear Information System (INIS)

    Gueneau, C.; Ansara, I.

    1994-01-01

    The substitutions of Al Si, Fe Mn and Fe Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil's model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs

  2. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  3. INFLUÊNCIA ESTOICA NA CONCEPÇÃO DE <em>STATUS> E <em>DICTUM> COMO <em> QUASI RES EM> (ὡσανεì τινά EM ABERLARDO STOIC INFLUENCE IN ABELARD'S CONCEPTION OF <em>STATUS> AND <em>DICTUM> AS <em>QUASI RESem> (ὡσανεì τινά.

    Directory of Open Access Journals (Sweden)

    Guy Hamelin

    2011-09-01

    Full Text Available Na sua obra, Pedro Abelardo (1079-1142 destaca duas noções metafísicas que fundamentam sua teoria lógica: o <em style="mso-bidi-font-style: normal;">statusem> e o <em style="mso-bidi-font-style: normal;">dictum propositionisem>, ao causar, respectivamente, a imposição (<em style="mso-bidi-font-style: normal;">impositioem> dos termos universais e o valor de verdade das proposições. Trata-se de expressões que se referem a naturezas ontológicas peculiares, na medida em que não são consideradas coisas (<em style="mso-bidi-font-style: normal;">resem>, mesmo que constituem causas. Todavia, também não são nada. Abelardo as chama de ‘quase coisas’ (<em style="mso-bidi-font-style: normal;">quasi resem>. No presente artigo, explicamos, primeiro, essas duas noções essenciais da lógica abelardiana, antes de tentar, em seguida, encontrar a fonte dessa metafísica particular. Em oposição a comentadores importantes da lógica de Abelardo, que estimam que haja uma forte influência platônica sobre essa concepção específica, defendemos antes, com apoio de textos significativos e de acordo com o nominalismo abelardiano, que a maior ascendência sobre a metafísica do nosso autor é a do estoicismo, sobretudo, antigo.In his work, Peter Abelard (1079-1142 highlights two metaphysical notions, which sustain his logical theory: the <em>status> and the <em>dictum propositionisem>, causing respectively both the imposition (<em>impositio> of universal terms and the thuth-value of propositions. Both expressions refer to peculiar ontological natures, in so far as they are not considered things (<em>res>, even if they constitute causes. Nevertheless, neither are they ‘nothing’. Abelard calls them ‘quasi-things’ (<em>quasi resem>. In the present article, we expound first these two essential notions of Abelardian logic before then trying to find the source of this particular metaphysics. Contrary to some important

  4. Ploidia de DNA em astrocitomas: estudo em 66 pacientes brasileiros

    Directory of Open Access Journals (Sweden)

    KRUTMAN-ZVEIBIL DEBORAH

    1999-01-01

    Full Text Available A determinação do conteúdo de DNA nuclear (fração de fase S e ploidia de DNA foi realizada por meio de análise de imagem em 66 astrocitomas, a partir de material fixado em formalina e seccionado em cortes de 5 micrômetros corados pela técnica de Feulgen. Nossos resultados mostraram forte relação entre a idade do paciente, grau histológico e sobrevida , com a ploidia de DNA e o percentual de células em fase de síntese. A análise da atividade proliferativa de astrocitomas intracranianos é a nosso ver muito útil no entendimento do comportamento biológico , do prognóstico e para o planejamento terapêutico dessas lesões.

  5. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  6. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  7. Joining SiC/SiC composites for fusion applications

    International Nuclear Information System (INIS)

    Henager, C.J.

    2007-01-01

    Full text of publication follows: The use of SiC-reinforced composites for fusion reactors or other nuclear applications will likely require some form of joining in order to form large structural or functional sections. Joints must be able to allow load transfer to the composite material so that the fiber reinforcements are able to carry their designed loads and the joint should not fail in a brittle manner. In addition, joints must be tolerant of radiation damage similar to the composite material to maintain the structural integrity of the joined section. Other requirements of interest are low activation joints and ease of joining application and processing, which are a difficult set of criteria to meet. Research at PNNL has been directed at high-strength joints using solid-state displacement reactions and pre-ceramic polymer joints that are easy to apply and that could be used in field repair situations. This research will report on the further development and testing of such joints using a double notch shear (DNS) specimen that is suitable for in-reactor testing. The results reveal that the solid-state joints are stronger than the polymer-based joints but require high-temperature, high-pressure processing. The polymer-based joints can be applied with reduced pressure and temperature processing compared to the solid-state joints. The polymer-based joints may have adequate strength for some applications where ease of application and in situ processing are required. Although irradiation testing is not reported in this study the use of the DNS specimen is discussed with regard to future neutron irradiations. (authors)

  8. Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

    Energy Technology Data Exchange (ETDEWEB)

    Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

  9. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  10. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  11. Dimensões irônicas em Ricardo III, de Shakespeare

    Directory of Open Access Journals (Sweden)

    Pedro Piccoli Garcia

    2017-12-01

    Full Text Available Analisa-se, no artigo, as diferentes formas com que a ironia se efetiva em um texto literário. Parte-se do pressuposto de que a ironia configura, ao mesmo tempo, uma figura de linguagem, como uma sentença que anula a si mesma na medida em que orienta o leitor a rejeitar seu significado literal; e uma visão de mundo, na medida em que implica uma postura de negação de uma realidade. À luz dos preceitos de D.C. Muecke e Søren Kierkegaard, busca-se identificar as dimensões irônicas da peça Ricardo III, de William Shakespeare, e refletir acerca delas.

  12. Extraction of Dihydroquercetin<em> em>from <em>Larix gmeliniem>i> em>with Ultrasound-Assisted and Microwave-Assisted Alternant Digestion

    Directory of Open Access Journals (Sweden)

    Yuangang Zu

    2012-07-01

    Full Text Available An ultrasound and microwave assisted alternant extraction method (UMAE was applied for extracting dihydroquercetin (DHQ from <em>Larix gmeliniem>i> wood. This investigation was conducted using 60% ethanol as solvent, 1:12 solid to liquid ratio, and 3 h soaking time. The optimum treatment time was ultrasound 40 min, microwave 20 min, respectively, and the extraction was performed once. Under the optimized conditions, satisfactory extraction yield of the target analyte was obtained. Relative to ultrasound-assisted or microwave-assisted method, the proposed approach provides higher extraction yield. The effect of DHQ of different concentrations and synthetic antioxidants on oxidative stability in soy bean oil stored for 20 days at different temperatures (25 °C and 60 °C was compared. DHQ was more effective in restraining soy bean oil oxidation, and a dose-response relationship was observed. The antioxidant activity of DHQ was a little stronger than that of BHA and BHT. Soy bean oil supplemented with 0.08 mg/g DHQ exhibited favorable antioxidant effects and is preferable for effectively avoiding oxidation. The <em>L. gmeliniiem> wood samples before and after extraction were characterized by scanning electron microscopy. The results showed that the UMAE method is a simple and efficient technique for sample preparation.

  13. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  14. Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

    2011-01-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

  15. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  16. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Control of the graphene growth rate on capped SiC surface under strong Si confinement

    International Nuclear Information System (INIS)

    Çelebi, C.; Yanık, C.; Demirkol, A.G.; Kaya, İsmet İ.

    2013-01-01

    Highlights: ► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. - Abstract: The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (0 0 0 −1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiC cap /SiC sample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.

  18. The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

    Science.gov (United States)

    Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

    2018-04-01

    SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

  19. Studies on Kondo insulating FeSi

    International Nuclear Information System (INIS)

    Bharathi, A.; Mani, Awadhesh; Ravindran, Nithya; Mathi Jaya, S.; Sundar, C.S.; Hariharan, Y.

    2000-01-01

    Temperature dependent electrical resistivity measurements have been carried out in Fe (1-x) Ru x Si and FeSi (1-x) Ge x to examine the robustness of the Kondo Insulating gap to substitution in the Fe and Si sublattices. The gap is seen to decrease with Ge substitution, while for Ru substitution the gap shows an initial decrease followed by an increase at higher concentration. The results can be understood in terms of the shift in the mobility edge due to disorder and/or pressure effects in combination with changes in band structure

  20. Properties of tribology for Si implanted PET

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

    2002-01-01

    Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

  1. Preferencia alimenticia del ácaro depredador <em>Balaustium> sp. en condiciones controladas

    Directory of Open Access Journals (Sweden)

    Muñoz Karen

    2009-04-01

    Full Text Available

    Se evaluó la preferencia de presas de <em>Balaustium> sp., enemigo natural de diferentes artrópodos plaga, y el cual es nativo de la Sabana de Bogotá. En unidades experimentales construidas con foliolos de plantas de rosa se colocaron independientemente individuos de <em>Balaustium> sp. y se registró el número de presas consumidas. De esta manera se determinó la preferencia de los tres estados móviles del ácaro depredador <em>Balaustium> sp. por diferentes edades de tres presas. Las especies y edades de las presas estudiadas fueron: huevos, ninfas y adultos de <em>Trialeurodes vaporariorumem>, huevos, ninfas y adultos de <em>Tetranychus urticaeem>, y larvas de primer y segundo instar y adultos de <em>Frankliniella occidentalisem>. Los estados menos desarrollados fueron preferidos, aunque se observó que los adultos del depredador tienen gran habilidad para consumir adultos de <em>T. vaporariorumem>. La presa preferida por las larvas de <em>Balaustium> sp. fue los huevos de <em>T. urticaeem> con una proporción de consumo de 0,54 de los huevos que se ofrecieron de esta presa; las deutoninfas del depredador eligieron huevos de <em>T. vaporariorumem> (0,537 o de <em>T. urticaeem> (0,497 y los adultos de <em>Balaustium> sp. prefrieron los huevos de <em>T. vaporariorumem> (0,588.

  2. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  3. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  4. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  5. Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

    Science.gov (United States)

    Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

    2013-07-01

    The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  6. Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

    Directory of Open Access Journals (Sweden)

    M. Sommer

    2013-07-01

    Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  7. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  8. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  9. “Se não bater, não aprende”: educação e direitos da criança e do adolescente em Angola = “If not beaten, we do not learn”: education and children’s rights in Angola = “Si no nos golpean, no aprendemos”: educación y derechos del niño en Angola

    Directory of Open Access Journals (Sweden)

    Sacco, Airi Macias

    2016-01-01

    Full Text Available O objetivo deste artigo é investigar a situação dos direitos da criança e a utilização de castigos físicos em escolas de ensino público primário de Angola. Foram realizados dois estudos, um quantitativo e outro qualitativo, e ambos tiveram como plano de fundo metodológico a inserção ecológica. Participaram do estudo quantitativo 241 crianças e adolescentes. Os resultados revelaram que a maioria já foi vítima de algum tipo de agressão física cometida por professores ou ficou de castigo na escola. No estudo qualitativo, as crianças e os adolescentes foram unânimes ao relatar o uso de castigos físicos e, apesar de não gostarem de ser castigadas, muitas afirmaram acreditar que estes são necessários para a aprendizagem. Elas também identificaram precariedade infraestrutural, escassez de material escolar e falta de água, energia elétrica e merenda. O respeito aos direitos da criança ainda é incipiente em Angola como um todo e nas escolas em particular

  10. Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

    International Nuclear Information System (INIS)

    Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

    1996-01-01

    The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

  11. Conjuntivite em animais de companhia

    OpenAIRE

    Gonçalves, Mariana Inês Pereira Coelho

    2015-01-01

    Dissertação de Mestrado Integrado em Medicina Veterinária, Ciências Veterinárias A conjuntivite é a doença ocular mais frequentemente diagnosticada em Medicina Veterinária, tanto em cães como em gatos. O facto de a conjuntiva ser uma membrana mucosa tão exposta a agentes externos faz com que esteja bastante suscetível a sofrer lesões, com consequente inflamação. Nesta dissertação abordam-se os diferentes tipos de conjuntivite, que são classificados de acordo com a sua etiologia. No Hospita...

  12. Conhecimento e interesse em economia

    Directory of Open Access Journals (Sweden)

    João Antonio de Paula

    2003-09-01

    Full Text Available O artigo argumenta em favor da necessidade de preservar o pluralismo em economia. Discute: i a natureza do conhecimento e de sua produção; ii as especificidades da produção do conhecimento em economia e os condicionamentos histórico-culturais do conhecimento; iii as implicações da hegemonia de certa concepção de método em economia.The article argues the need to preserve the pluralism in economics. The article examines: i the nature of the knowledge and of its production; ii the specificity of the knowledge production in economics and the historical and cultural conditionings of the knowledge; iii the implications of the hegemony of a certain methodological conception in economics.

  13. C/SiC/MoSi2-Si multilayer coatings for carbon/carbon composites for protection against oxidation

    International Nuclear Information System (INIS)

    Zhang Yulei; Li Hejun; Qiang Xinfa; Li Kezhi; Zhang Shouyang

    2011-01-01

    Highlights: → A C/SiC/MoSi 2 -Si multilayer coating was prepared on C/C by slurry and pack cementation. → Multilayer coating can protect C/C for 300 h at 1873 K or 103 h at 1873 K in air. → The penetration cracks in the coating result in the weight loss of the coated C/C. → The fracture of the coated C/C in wind tunnel result from the excessive local stress. - Abstract: To improve the oxidation resistance of carbon/carbon (C/C) composites, a C/SiC/MoSi 2 -Si multilayer oxidation protective coating was prepared by slurry and pack cementation. The microstructure of the as-prepared coating was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The isothermal oxidation and erosion resistance of the coating was investigated in electrical furnace and high temperature wind tunnel. The results showed that the multilayer coating could effectively protect C/C composites from oxidation in air for 300 h at 1773 K and 103 h at 1873 K, and the coated samples was fractured after erosion for 27 h at 1873 K h in wind tunnel. The weight loss of the coated specimens was considered to be caused by the formation of penetration cracks in the coating. The fracture of the coated C/C composites might result from the excessive local stress in the coating.

  14. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  15. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    International Nuclear Information System (INIS)

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  16. Study of two-dimensional hole gas at Si/SiGe/Si inverted interface

    International Nuclear Information System (INIS)

    Sadeghazdeh, M.A.; Mironov, O.A.; Parry, C.P.; Philips, P.J.; Parker, E.H.C.; Wahll, T.E.; Emeleus, C.J.

    1998-01-01

    We have studied the transport of two-dimensional hole gas (2DHG) at the inverted interface of a strained Si 0.8 Ge 0.2 quantum well. By application of bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n s can be controlled, in the range of (1.5-5.2)x10 11 cm -2 . At temperature T = 033 K, the Hall mobility is 4650 cm 2 V -1 s -1 at the maximum carrier density. For lower sheet densities (n s 11 cm -2 ) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m* = (0.25 → 0.28)m o and the ratio of transport to quantum lifetimes α = (0.92 → 0.85) for the corresponding carrier density change of n s = (5.2 → 2.5)x10 11 cm -2 . These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n s , short range interface roughness scattering. (author)

  17. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  18. SiC/SiC fuel cladding R and D Project 'SCARLET': Status and future plan

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira

    2015-01-01

    This paper provides the recent progress in SiC/SiC development towards early utilisation for LWRs based on NITE method. After the March 11 Disaster in East-Japan, ensuring safe technology for LWR became a top priority R and D in nuclear energy policy of Japan. Along this line, replacement of Zircaloy claddings with SiC/SiC based fuel cladding is becoming one of the most attractive options and a MEXT fund based project, SCARLET, and a METI fund based project have been launched as 5-year termed projects at Muroran Institute of Technology. These projects care for NITE process for making long SiC/SiC fuel pins and connecting technology integration. The SCARLET project also includes coolant compatibility and irradiation effect evaluations as LWR and LMFBR materials. The outline and the present status of the SCARLET project will be briefly introduced in the present paper. (authors)

  19. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  20. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  1. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  2. The structure modification of Si-SiO2 irradiated by Fe+ ion

    International Nuclear Information System (INIS)

    Jin Tao; Ma Zhongquan; Guo Qi

    1992-01-01

    The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

  3. SiC Discrete Power Devices

    National Research Council Canada - National Science Library

    Baliga, B

    2000-01-01

    .... The investigation of the poor performance of the 4H-SiC ACCUFETs provided insights for changes in device design and process flow, for improving their breakdown voltage and specific on-resistance...

  4. Mass and QEC value of 26Si

    International Nuclear Information System (INIS)

    Eronen, T.; Elomaa, V.-V.; Hager, U.; Hakala, J.; Jokinen, A.; Kankainen, A.; Kessler, T.; Moore, I. D.; Rahaman, S.; Rissanen, J.; Weber, C.; Aeystoe, J.

    2009-01-01

    The Q EC value of the superallowed β emitter 26 Si has been measured with the JYFLTRAP Penning trap facility to be 4840.85(10) keV which is ten times more precise than any previous measurement. This leaves only the branching ratio to be improved before the Ft value of 26 Si can be used to test the conserved vector current hypothesis. As a consequence, the 25 Al(p,γ) 26 Si reaction Q-value (Q pγ ) was improved to be 5513.7(5) keV, limited now by the mass excess of 25 Al. The new Q pγ value changes the stellar production rate of 26 Si in nova ignition temperatures by about 10%

  5. Ternary alloying study of MoSi2

    International Nuclear Information System (INIS)

    Yi, D.; Li, C.; Akselsen, O.M.; Ulvensoen, J.H.

    1998-01-01

    Ternary alloying of MoSi 2 with adding a series of transition elements was investigated by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). Iron, Co, Ni, Cr, V, Ti, and Nb were chosen as alloying elements according to the AB 2 structure map or the atomic size factor. The studied MoSi 2 base alloys were prepared by the arc melting process from high-purity metals. The EDS analysis showed that Fe, Co, and Ni have no solid solubility in as-cast MoSi 2 , while Cr, V, Ti, and Nb exhibit limited solid solubilities, which were determined to be 1.4 ± 0.7, 1.4 ± 0.4, 0.4 ± 0.1, and 0.8 ± 0.1. Microstructural characterization indicated that Mo-Si-M VIII (M VIII = Fe, Co, Ni) and Mo-Si-Cr alloys have a two-phase as-cast microstructure, i.e., MoSi 2 matrix and the second-phase FeSi 2 , CoSi, NiSi 2 , and CrSi 2 , respectively. In as-cast Mo-Si-V, Mo-Si-Ti, and Mo-Si-Nb alloys, besides MoSi 2 and C40 phases, the third phases were observed, which have been identified to be (Mo, V) 5 Si 3 , TiSi 2 , and (Mo, Nb) 5 Si 3

  6. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  7. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  8. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T R [Australian National Univ., Canberra, ACT (Australia); Mitchell, I V [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1997-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  9. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  10. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  11. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  12. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  13. SiPM properties at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Biroth, Maik; Achenbach, Patrick; Thomas, Andreas [Institut fuer Kernphysik, Johannes Gutenberg-Universitaet, Mainz (Germany); Downie, Evangeline [George Washington University, DC (United States); Collaboration: A2-Collaboration

    2015-07-01

    At the electron accelerator Mainzer Mikrotron (MAMI) an active target build of polarizable scintillators will be operated at approximately 25 mK. To read out the scintillation light, the photodetectors have to withstand cryogenic temperatures of 4 K and high count rates. Therefore the properties of different types of silicon photomultipliers (SiPMs) were studied at cryogenic temperatures. In liquid nitrogen at 77 K, problems with quenching in Hamamatsu SiPMs and with the protective epoxy layer covering Zecotek SiPMs were observed. Tests with one Zecotek SiPM were successful after removal of the epoxy layer in liquid helium at 4 K and no after-pulses could be observed. Fundamental parameters like break-down voltage, single-pixel gain, crosstalk probability and the dark-count rate were measured and compared to room temperature. The photon detection efficiency was estimated by SiPMs response to short LED pulses. All these parameters were extracted by curve-fitting of SiPM charge spectra with a new analytical function.

  14. Práticas de si de cuidadores familiares na atenção domiciliar

    Directory of Open Access Journals (Sweden)

    Bruna Ferreira Ribeiro

    2017-09-01

    Full Text Available Introdução: Atualmente há expansão de serviços de atenção domiciliar, sendo necessário que algum familiar seja o cuidador. Deste modo, é relevante compreender as práticas de si dos cuidadores familiares no contexto da atenção domiciliar. Materiais e Métodos: Pesquisa qualitativa, inserida na vertente pós-estruturalista. Participaram da pesquisa 18 cuidadores familiares de pacientes com doenças crônicas ou terminais vinculados ao serviço de atenção domiciliar de um hospital do sul do Brasil. A produção de informações ocorreu por meio de entrevista narrativa, realizada entre julho de 2015 e março de 2016. Os participantes foram entrevistados em três encontros, com periodicidade semanal. A análise se constituiu de questões elaboradas diante das informações produzidas articuladas com as teorizações foucaultianas, sobre cuidado de si, relações de poder e discurso. Resultados e Discussão: Duas categorias foram elaboradas: Constituição do sujeito cuidador: quais os discursos que o atravessam? e práticas de si como caminho de ressignificação ao cuidado. As práticas de si foram configuradas como modo de acesso a verdade, se caracterizando como fio condutor do cuidado de si, levando os cuidadores, nas suas mais diversas formas de ser, a se subjetivarem e se reconstituírem, através de si e do outro. Conclusões: Ser cuidador familiar é circundado por diversos discursos que atravessam seu modo de cuidar e que as práticas de si foram configuradas como modo de acesso a verdade. Como citar este artigo: Ribeiro BF, Oliveira SG, Tristão FSA, Santos-Júnior JRG, Farias TA. Práticas de si de cuidadores familiares na atenção domiciliar. Rev Cuid. 2017; 8(3: 1809-25. http://dx.doi.org/10.15649/cuidarte.v8i3.429

  15. Separation of stress-free AlN/SiC thin films from Si substrate

    International Nuclear Information System (INIS)

    Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

    2016-01-01

    We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

  16. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  17. Stability of Ta-encapsulating Si clusters on Si(111)-(7x7) surfaces

    CERN Document Server

    Uchida, N; Miyazaki, T; Kanayama, T

    2003-01-01

    Tantalum containing Si cluster ions TaSi sub 1 sub 0 sub - sub 1 sub 3 H sub x sup + were synthesized in an ion trap and deposited onto Si(111)-(7x7) surfaces with a kinetic energy of 18 eV. Scanning tunnelling microscope observations revealed that the clusters adsorbed on the surface without decomposition, consistent with ab initio calculation results, that predicted the clusters would have stable Si-cage structures with a Ta atom at the centre. (rapid communication)

  18. Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

    Science.gov (United States)

    Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

    2009-04-01

    Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

  19. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

  20. SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    International Nuclear Information System (INIS)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    2015-01-01

    We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

  1. White photoluminescence from Si/SiO{sub 2} nanostructured film

    Energy Technology Data Exchange (ETDEWEB)

    Duong, P.H.; Ngan, N.T.T.; Tuan, C.A. [Institute of Materials Science, Vietnamese Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Huy, P.T. [International Training Institute of Materials Science, Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Itoh, T. [Graduate School of Engineering Science, Osaka University, Toyonaka (Japan)

    2008-12-15

    We present in this work the results of PL measurement of Si-NC embedded in Si/SiO{sub 2} multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si-NC. The origin of these phenomena will be discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  3. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  4. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  5. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  6. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  7. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  8. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  9. Proposals for the conservation of otters <em>Lutra lutraem> L. on Corfu island (Ionian Sea, Greece

    Directory of Open Access Journals (Sweden)

    Xavier Grémillet

    1995-12-01

    Full Text Available Abstract Suggested measures for the conservation of otters (<em>Lutra lutraem> on Corfu include: 1 a nature sanctuary ("Otter Haven" for some little remote lagoons near Aghios Stephanos in the north-east; 2 a lagoon restoration scheme including restoration of traditional fishing with joint nature tourism for the large reedbeds and lagoons: Antinioti (100 ha in the north, Chalkiopoulou (380 ha in the suburbs of Kerkyra, Korission (500 ha in the south-west; 3 the stopping of raw sewage discharge, illegal infilling, building and waste dumping in the wetlands; 4 the limitation of intensive fish farming schemes. Such a policy is reconcilable with economic activities (tourism, fishing, trade or administration. Riassunto Proposte per la conservazione della lontra <em>Lutra lutraem> L. nell'isola di Corfù (Mare Jonio, Grecia - Per la conservazione della lontra (Lutra lutra nell'Isola di Corfù sono suggeriti i seguenti interventi: 1 creazione di "santuari naturali" per la specie comprendenti le piccole lagune vicino a Aghios Stephanos nella parte nord-est dell'isola; 2 riqualificazione degli ambienti a canneto e delle lagune, abbinata a1 ripristino della pesca tradizionale e allo sviluppo del turismo ecologico: Antinioti (100 ha nella parte settentrionale, Chalkiopoulou (380 ha nell'area suburbana di Kerkyra, Korission (500 ha nella parte sud-ovest; 3 divieto di scarichi fognari e abusivi, divieto di costruzione di insediamenti abitativi e eliminazione di discariche nelle zone umide; 4 limitazioni allo sviluppo degli allevamenti ittici intensivi. Gli interventi prospettati si inquadrano in una politica di gestione ambientale compatibile con le attività economiche presenti (turismo, pesca, commercio.

  10. Activity-Guided Isolation of Antioxidant Compounds from <em>Rhizophora apiculataem>

    Directory of Open Access Journals (Sweden)

    Hongbin Xiao

    2012-09-01

    Full Text Available <em>Rhizophora apiculataem> (<em>R. apiculataem> contains an abundance of biologically active compounds due its special salt-tolerant living surroundings. In this study, the total phenolic content and antioxidant activities of various extract and fractions of stem of <em>R. apiculataem> were investigated. Results indicated that butanol fraction possesses the highest total phenolic content (181.84 mg/g GAE/g dry extract with strongest antioxidant abilities. Following <em>in vitroem> antioxidant activity-guided phytochemical separation procedures, lyoniresinol-3α-<em>O>-β-arabinopyranoside (1, lyoniresinol-3α-<em>O>-β-rhamnoside (2, and afzelechin-3-<em>O>-L-rhamno-pyranoside (3 were separated from the butanol fraction. These compounds showed more noticeable antioxidant activity than a BHT standard in the DPPH, ABTS and hydroxyl radical scavenging assays. HPLC analysis results showed that among different plant parts, the highest content of 13 was located in the bark (0.068%, 0.066% and 0.011%, respectively. The results imply that the <em>R. apiculataem> might be a potential source of natural antioxidants and 13 are antioxidant ingredients in <em>R. apiculataem>.

  11. Regional Suppression of <em>Bactrocera> Fruit Flies (Diptera: Tephritidae in the Pacific through Biological Control and Prospects for Future Introductions into Other Areas of the World

    Directory of Open Access Journals (Sweden)

    Roger I. Vargas

    2012-08-01

    Full Text Available <em>Bactrocera> fruit fly species are economically important throughout the Pacific. The USDA, ARS U.S. Pacific Basin Agricultural Research Center has been a world leader in promoting biological control of <em>Bactrocera> spp. that includes classical, augmentative, conservation and IPM approaches. In Hawaii, establishment of <em>Bactrocera> <em>cucurbitae> (Coquillett in 1895 resulted in the introduction of the most successful parasitoid, <em>Psyttalia> <em>fletcheri> (Silvestri; similarly, establishment of <em>Bactrocera> <em>dorsalis> (Hendel in 1945 resulted in the introduction of 32 natural enemies of which <em>Fopius> <em>arisanus> (Sonan, <em>Diachasmimorpha> <em>longicaudata> (Ashmead and <em>Fopius> <em>vandenboschi> (Fullaway were most successful. Hawaii has also been a source of parasitoids for fruit fly control throughout the Pacific region including Australia, Pacific Island Nations, Central and South America, not only for <em>Bactrocera> spp. but also for <em>Ceratitis> and <em>Anastrepha> spp. Most recently, in 2002, <em>F.> <em>arisanus> was introduced into French Polynesia where <em>B.> <em>dorsalis> had invaded in 1996. Establishment of <em>D.> <em>longicaudata> into the new world has been important to augmentative biological control releases against <em>Anastrepha> spp. With the rapid expansion of airline travel and global trade there has been an alarming spread of <em>Bactrocera> spp. into new areas of the world (<em>i.e.>, South America and Africa. Results of studies in Hawaii and French Polynesia, support parasitoid introductions into South America and Africa, where <em>B.> <em>carambolae> and <em>B.> <em>invadens>, respectively, have become established. In addition, <em>P.> <em>fletcheri> is a candidate for biological control of <em>B.> <em>cucurbitae> in Africa. We review past and more

  12. Analise da adaptação marginal de proteses fixas implanto-suportadas em liga de titanio, fundidas em monobloco ou submetidas a soldagem laser e eletroerosão atraves do assentamento passivo

    OpenAIRE

    Tatiana Bernardon Peixoto Silva

    2001-01-01

    Resumo: A proposta deste trabalho foi avaliar o desadaptação marginal de infra-estruturas de próteses fixas implanto-suportadas fundidas em monobloco e submetidas à soldagem laser, antes e após a eletroerosão através da análise do assentaIÍlento passivo. Vinte infta-estruturas foram confeccionadas a partir de um modelo mestre metálico com cinco implantes fixados na região inter-forâmes paralelos entre si, e fundidas em titânio comercialmente puro - Ti c. p. (Rematitan - Dentaurum - Pforzhein ...

  13. Revision of the Li13Si4 structure.

    Science.gov (United States)

    Zeilinger, Michael; Fässler, Thomas F

    2013-11-06

    Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

  14. Electrospun a-Si using Liquid Silane/Polymer Inks

    Energy Technology Data Exchange (ETDEWEB)

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  15. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  16. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    International Nuclear Information System (INIS)

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  17. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

    2016-06-15

    Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  18. Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

    Science.gov (United States)

    Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

    2013-09-01

    The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

  19. siMS Score: Simple Method for Quantifying Metabolic Syndrome

    OpenAIRE

    Soldatovic, Ivan; Vukovic, Rade; Culafic, Djordje; Gajic, Milan; Dimitrijevic-Sreckovic, Vesna

    2016-01-01

    Objective To evaluate siMS score and siMS risk score, novel continuous metabolic syndrome scores as methods for quantification of metabolic status and risk. Materials and Methods Developed siMS score was calculated using formula: siMS score = 2*Waist/Height + Gly/5.6 + Tg/1.7 + TAsystolic/130?HDL/1.02 or 1.28 (for male or female subjects, respectively). siMS risk score was calculated using formula: siMS risk score = siMS score * age/45 or 50 (for male or female subjects, respectively) * famil...

  20. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  1. <em>Trichoderma harzianumem> como promotor del crecimiento vegetal del maracuyá (<em>Passiflora edulisem> var. <em>flavicarpa> Degener

    Directory of Open Access Journals (Sweden)

    Cubillos-Hinojosa Juan

    2009-04-01

    Full Text Available

    Se realizó un experimento en condiciones de laboratorio e invernadero, con el propósito de evaluar el efecto de la cepa nativa TCN-014 y la cepa comercial TCC-005 de <em>Trichoderma harzianumem> sobre la germinación y el crecimiento temprano del maracuyá. Se adecuaron inóculos de 104, 106 y 108 conidias/mL para cada cepa y se aplicaron a semillas de maracuyá; se evaluó el número de semillas germinadas durante 15 días; se calculó el porcentaje de germinación, el índice de velocidad de germinación y el tiempo medio de germinación. Posteriormente las semillas germinadas se llevaron a condiciones de invernadero y transcurridos dos meses se midió la altura de las plántulas, el grosor del tallo, el número de hojas, la longitud de la raíz y el peso seco total. Todos los tratamientos estimularon la germinación de las semillas y el desarrollo de las plántulas; sin embargo la cepa nativa en concentraciones 106 y 108 conidias/mL mostró resultados superiores frente a la cepa comercial. Los resultados sugieren una acción efectiva de <em>T. harzianumem> como promotor de crecimiento vegetal, mostrando que tiene potencial para la elaboración de un bioproducto útil para el manejo ecológico del cultivo de maracuyá.

  2. Abundance of Royle’s pika (<em>Ochotona royleiem> along an altitudinal gradient in Uttarakhand, Western Himalaya

    Directory of Open Access Journals (Sweden)

    Sabuj Bhattacharyya

    2010-06-01

    Full Text Available Abstract The relative abundance of Royle’s pika (<em>Ochotona royleiem> was studied in a part of the Kedarnath Wildlife Sanctuary, Uttarakhand, West Himalaya along an altitudinal gradient from 2900 to 3650 m a.s.l. Pikas’ detection probability and relative abundance per month and habitat were recorded by monthly surveys consisting of three sampling sessions of four hours each. Food plant species were identified by visual observation and quantified by a standard quadrat method. The highest relative abundance was observed at man-made walls and surroundings in the alpine zone and on broken slopes in the sub-alpine one, whereas alpine meadows showed the lowest abundance. A total of 26 plant species were found to be consumed by pikas. The proportion of forage plants was the highest (77.4% on the rocky slopes of the timberline zone The results of multiple regressions suggest that rock cover is the main factor affecting the relative abundance of Royle’s pika. Rocky areas probably offer both nest-sites and temporary refuges to escape from predators.
    Riassunto Abbondanza relativa del pica di Royle (<em>Ochotona royleiem> lungo un gradiente altitudinale in Uttarakhand, Himalaya occidentale. In un’area del Kedarnath Wildlife Sanctuary (Uttarakhand, Himalaya occidentale, é stata stimata l’abbondanza relativa del pika di Royle (<em>Ochotona royleiem> lungo un gradiente altitudinale compreso tra 2900 e 3650 m. Sono stati identificate tre fasce altitudinali e 10 habitat complessivi. La probabilità di osservazione e l’abbondanza relativa dei pika per ciascun mese e habitat sono state stimate tramite censimenti mensili consistenti in tre periodi di 4 ore ciascuno. Le specie vegetali consumate sono state identificate tramite osservazione diretta; la disponibilità è stata quantificata tramite rilievo fitosociologico standard. L’abbondanza relativa maggiore è stata riscontrata nella

  3. Near-surface segregation in irradiated Ni3Si

    International Nuclear Information System (INIS)

    Wagner, W.; Rehn, L.E.; Wiedersich, H.

    1982-01-01

    The radiation-induced growth of Ni 3 Si films on the surfaces of Ni(Si) alloys containing = 3 Si phase has been observed. Post-irradiation depth profiling by Auger electron spectroscopy, as well as in situ analysis by high-resolution Rutherford backscattering spectrometry, reveals Si-enrichment at the surfaces of Ni(Si) alloys in excess of stoichiometric Ni 3 Si during irradiation. Thin, near-surface layers with silicon concentrations of 28 to 30 at.% are observed, and even higher Si enrichment is found in the first few atom layers. Transmission electron microscopy and selected area-electron diffraction were employed to characterize these Si-enriched layers. A complex, multiple-spot diffraction pattern is observed superposed on the diffraction pattern of ordered Ni 3 Si. The d-spacings obtained from the extra spots are consistent with those of the orthohexagonal intermetallic compound Ni 5 Si 2 . (author)

  4. Tratamento da dor em queimados

    Directory of Open Access Journals (Sweden)

    Rodrigo José Alencar de Castro

    2013-02-01

    Full Text Available JUSTIFICATIVA E OBJETIVOS: Apesar dos avanços, ainda é observado manejo analgésico inadequado dos pacientes com queimaduras. O objetivo desta revisão foi coletar dados sobre tratamento da dor em queimados. CONTEÚDO: Foi feita revisão sobre os mecanismos de dor, avaliação do paciente com queimadura e o tratamento farmacológico e não farmacológico. CONCLUSÕES: O manejo da dor em pacientes vítimas de queimaduras ainda é um desafio por parte da equipe multiprofissional. A avaliação frequente e contínua da resposta apresentada pelo paciente é muito importante, tendo em vista os vários momentos por que passa o paciente internado em decorrência de uma queimadura, além de uma terapêutica combinada com medicações analgésicas e medidas não farmacológicas. Entender a complexidade de alterações fisiopatológicas, psicológicas e bioquímicas apresentadas por um paciente em tratamento de queimadura é o primeiro passo para alcançar o sucesso no seu manejo analgésico.

  5. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  6. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  7. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    International Nuclear Information System (INIS)

    Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

    2004-01-01

    (Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

  8. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Science.gov (United States)

    Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

    2004-03-01

    (Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

  9. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

    Science.gov (United States)

    Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

    2018-01-01

    The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

  10. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  11. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  12. Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

    2013-01-01

    In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

  13. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  14. Chemically activated graphene/porous Si@SiO{sub x} composite as anode for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Hua-Chao [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Yang, Xue-Lin, E-mail: xlyang@ctgu.edu.cn [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Zhang, Lu-Lu; Ni, Shi-Bing [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China)

    2014-10-15

    Chemically activated graphene/porous Si@SiO{sub x} (CAG/Si@SiO{sub x}) composite has been synthesized via magnesiothemic reduction of mesoporous SiO{sub 2} (MCM-48) to porous Si@SiO{sub x} and dispersing in the suspension of chemically activated graphene oxide (CAGO) followed by thermal reduction. The porous Si@SiO{sub x} particles are well encapsulated in chemically activated graphene (CAG) matrix. The resulting CAG/Si@SiO{sub x} composite exhibits a high reversible capacity and excellent cycling stability up to 763 mAh g{sup −1} at a current density of 100 mA g{sup −1} after 50 cycles. The porous structure of CAG layer and Si@SiO{sub x} is beneficial to accommodate volume expansion of Si during discharge and charge process and the interconnected CAG improves the electronic conductivity of composite. - Highlights: • Chemically activated graphene encapsulated porous Si composite was prepared. • The graphene offers a continuous electrically conductive network. • The porous structure can accommodate volume expansion of Si-based materials. • The composite exhibits excellent lithium storage performance.

  15. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  16. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

  17. Synthesis of micro-sized interconnected Si-C composites

    Science.gov (United States)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  18. SiC-Si as a support material for oxygen evolution electrode in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Tomás García, Antonio Luis; Petrushina, Irina

    2011-01-01

    The need of higher energy efficiency in hydrogen production has promoted the research on improved catalysts for water electrolysis. In this work, a novel supported catalyst for oxygen evolution electrodes was prepared and characterized with different techniques. IrO2 supported on a SiC/Si composite...

  19. Progressive degradation in a-Si: H/SiN thin film transistors

    NARCIS (Netherlands)

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2003-01-01

    In this paper we present the study of gate-stress induced degradation in a-Si:H/SiN TFTs. The drain current transient during gate bias stress (forward or reverse bias) and subsequent relaxation cannot be fitted with the models existent in the literature but it shows to be described by a progressive

  20. INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

    NARCIS (Netherlands)

    BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

    Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

  1. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  2. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Science.gov (United States)

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  3. Weld microstructure in cast AlSi9/SiC(p metal matrix composites

    Directory of Open Access Journals (Sweden)

    J. Wysocki

    2009-04-01

    Full Text Available Welded joint in cast AlSi9/SiC/20(p metal matrix composite by manual TIG arc welding using AlMg5 filler metal has been described inhis paper. Cooling curves have been stated, and the influence in distribution of reinforced particles on crystallization and weldmicrostructure. Welded joint mechanical properties have been determined: hardness and tensile.

  4. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  5. Atomization of U3Si2/U3Si for research reactor fuel

    International Nuclear Information System (INIS)

    Kuk, Il Hiun

    2004-01-01

    Instead of comminuting, U 3 Si 2 /U 3 Si powders are produced by atomizating directly from the molten alloys. Many benefits are introduced by applying the atomization technique: reduction of the process, homogeneous alloy composition within a particle and between particles, increase of the thermal conductivity and decrease of the chemical reactivity with aluminium due to particle's spherical shape. (author)

  6. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  7. New evaluation method of crack growth in SiC/SiC composites using interface elements

    International Nuclear Information System (INIS)

    Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

    2000-01-01

    Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

  8. Anomalous defect processes in Si implanted amorphous SiO2, II

    International Nuclear Information System (INIS)

    Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

    1994-01-01

    Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

  9. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  10. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys ...

    African Journals Online (AJOL)

    The effect of grain refiner, modifier, and combination of grain refiner cum modifier was studied on Al-5Si and Al-11Si alloys using computer aided cooling curve analysis. For combined grain refinement and modification effect, Al-Ti-B-Sr single master alloy was developed that acted as both grain refiner and modifier.

  11. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  12. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  13. Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

    DEFF Research Database (Denmark)

    Shiryaev, S.Y.; Jensen, Flemming; Hansen, J. Lundsgaard

    1997-01-01

    New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the or...

  14. O Estado em Durkheim: elementos para um debate sobre sua sociologia política

    Directory of Open Access Journals (Sweden)

    Márcio de Oliveira

    2010-10-01

    Full Text Available A existência de uma sociologia política em Durkheim tem provocado polêmicas e é assunto controverso, não apenas no Brasil, mas especialmente na França, sobretudo porque esse subcampo não consta da divisão das áreas da Sociologia que o próprio autor apresentou em vida. Este trabalho defende a tese segundo a qual há elementos que permitem pensar a sociologia política durkheimiana. Isso é feito por meio de um exame detalhado da evolução teórica de seu pensamento desde 1886, quando Durkheim retorna da Alemanha. Seguindo tanto a pista deixada por Marcel Mauss, quanto analisando suas obras e as obras de seus dois biógrafos mais importantes (Lukes e Fournier, investigamos como os temas propriamente políticos (em especial, o Estado surgem na Sociologia durkheimiana. Em conclusão, afirmamos que não é a partir de uma reflexão sobre a questão do poder (ou sobre o Estado em si, mas sobre a função social deste poder e/ou deste Estado e sua relação com a moral social que se deve compreender a sociologia política durkheimiana.

  15. Objetos mediadores em museus

    Directory of Open Access Journals (Sweden)

    Inês Ferreira

    2015-02-01

    Full Text Available Um museu participativo incentiva a que a experiência da visita seja criativa e pessoal. Facilita a participação biográfica do visitante - com a sua experiência, conhecimento e interesses. Muitas exposições, porém, não promovem esse envolvimento pessoal. Neste artigo apresentamos uma revisão da literatura que indicia que a mediação com objetos mediadores facilita o envolvimento pessoal, a construção de conhecimento e a criatividade. O problema teórico que colocamos é se os museus mais tradicionais se podem abrir à participação e, neste contexto, o nosso objetivo é perceber que papel podem ter os objetos mediadores nesse processo. Discutimos o recurso a objetos mediadores como forma de adicionar múltiplos níveis de relação e modos de ver, potencial que consideramos subaproveitado em muitos museus. Começamos por apresentar o museu como espaço potencialmente participativo, que convida a um envolvimento ativo e crítico – ativo, porque o visitante é desafiado a fazer coisas; crítico, porque é estimulado a pensar, optar, discutir e refletir. Discutimos depois diferentes formas de usar objetos mediadores para incentivar o visitante a um envolvimento com os artefactos, recorrendo à memória, experiência, conhecimento e sentimentos. A participação biográfica potencia o cruzamento entre o mundo interior do visitante e os artefactos e conteúdos do museu. Esse espaço de cruzamento - inbetween - é o espaço da construção de conhecimento. Apresentamos diversas formas de um museu, mesmo não sendo interativo, se tornar mais criativo e participativo, o que pode contribuir para uma mudança nas práticas dos museus, nomeadamente na montagem e remodelação de exposições permanentes.

  16. Nonviral pulmonary delivery of siRNA.

    Science.gov (United States)

    Merkel, Olivia M; Kissel, Thomas

    2012-07-17

    RNA interference (RNAi) is an important part of the cell's defenses against viruses and other foreign genes. Moreover, the biotechnological exploitation of RNAi offers therapeutic potential for a range of diseases for which drugs are currently unavailable. Unfortunately, the small interfering RNAs (siRNAs) that are central to RNAi in the cytoplasm are readily degradable by ubiquitous nucleases, are inefficiently targeted to desired organs and cell types, and are excreted quickly upon systemic injection. As a result, local administration techniques have been favored over the past few years, resulting in great success in the treatment of viral infections and other respiratory disorders. Because there are several advantages of pulmonary delivery over systemic administration, two of the four siRNA drugs currently in phase II clinical trials are delivered intranasally or by inhalation. The air-blood barrier, however, has only limited permeability toward large, hydrophilic biopharmaceuticals such as nucleic acids; in addition, the lung imposes intrinsic hurdles to efficient siRNA delivery. Thus, appropriate formulations and delivery devices are very much needed. Although many different formulations have been optimized for in vitro siRNA delivery to lung cells, only a few have been reported successful in vivo. In this Account, we discuss both obstacles to pulmonary siRNA delivery and the success stories that have been achieved thus far. The optimal pulmonary delivery vehicle should be neither cytotoxic nor immunogenic, should protect the payload from degradation by nucleases during the delivery process, and should mediate the intracellular uptake of siRNA. Further requirements include the improvement of the pharmacokinetics and lung distribution profiles of siRNA, the extension of lung retention times (through reduced recognition by macrophages), and the incorporation of reversible or stimuli-responsive binding of siRNA to allow for efficient release of the siRNAs at the

  17. Compression of Fe-Si-H alloys

    Science.gov (United States)

    Tagawa, S.; Ohta, K.; Hirose, K.

    2014-12-01

    The light elements in the Earth's core have not been fully identified yet, but hydrogen is now collecting more attention in part because recent planet formation theory suggests that large amount of water should have been brought to the Earth during its formation (giant-impact stage). Nevertheless, the effect of hydrogen on the property of iron alloys is little known so far. The earlier experimental study by Hirao et al. [2004 GRL] examined the compression behavior of dhcp FeHx (x ≈ 1) and found that it becomes much stiffer than pure iron above 50 GPa, where magnetization disappears. Here we examined the solubility of hydrogen into iron-rich Fe-Si alloys and the compression behavior of dhcp Fe-Si-H alloy at room temperature. Fe+6.5wt.%Si or Fe+9wt.%Si foil was loaded into a diamond-anvil cell (DAC), and then liquid hydrogen was introduced at temperatures below 20 K. X-ray diffraction measurements at SPring-8 revealed the formation of a dhcp phase with or without thermal annealing by laser above 8.4 GPa. The concentration of hydrogen in such dhcp lattice was calculated following the formula reported by Fukai [1992]; y = 0.5 and 0.2 for Fe-6.5wt.%Si-H or Fe-9wt.%Si-H alloys, respectively when y is defined as Fe(1-x)SixHy. Unlike Fe-H alloy, hydrogen didn't fully occupy the octahedral sites even under hydrogen-saturated conditions in the case of Fe-Si-H system. Anomaly was observed in obtained pressure-volume curve around 44 Å3 of unit-cell volume for both Fe-6.5wt.%Si-H and Fe-9wt.%Si-H alloys, which may be related to the spin transition in the dhcp phase. They became slightly stiffer at higher pressures, but their compressibility was still similar to that of pure iron.

  18. Strain distribution in freestanding Si/Si{sub x}N{sub y} membranes studied by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Hongye, E-mail: hongye18@mm.kyushu-u.ac.j [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2010-09-30

    Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous Si{sub x}N{sub y} layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in Si{sub x}N{sub y}-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the Si{sub x}N{sub y} layer beneath the Si layer is replaced by a SiO{sub 2} buried oxide layer.

  19. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    CERN Document Server

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  20. Strained Si engineering for nanoscale MOSFETs

    International Nuclear Information System (INIS)

    Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun

    2006-01-01

    We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10 3 , 9 x 10 3 , and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure

  1. Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

    2014-11-15

    Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  2. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  3. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature

    International Nuclear Information System (INIS)

    Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H.; Shiraishi, T.; Tanigawa, S.; Takasu, S.

    2001-01-01

    Annihilation characteristics of positrons in the carbon/Si structure in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of incident positron energy in the temperature range between 298 K and 1473 K. Above 1173 K, the value of S corresponding to the annihilation of positrons near the carbon/Si interface started to increase, which was attributed to the carbonization of Si and the introduction of open-space defects due to the diffusion of Si atoms toward the carbon layer. The behavior of Ps in a thermally grown SiO 2 film was also studied at 298-1523 K. (orig.)

  4. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  5. Joining of SiCf/SiC composites for thermonuclear fusion reactors

    International Nuclear Information System (INIS)

    Ferraris, M.; Badini, C.; Montorsi, M.; Appendino, P.; Scholz, H.W.

    1994-01-01

    Due to their favourable radiological behaviour, SiC f /SiC composites are promising structural materials for future use in fusion reactors. A problem to cope with is the joining of the ceramic composite material (CMC) to itself for more complex structures. Maintenance concepts for a reactor made of SiC f /SiC will demand a method of joining. The joining agents should comply with the low-activation approach of the base material. With the acceptable elements Si and Mg, sandwich structures of composite/metal/composite were prepared in Ar atmosphere at temperatures just above the melting points of the metals. Another promising route is the use of joining agents of boro-silicate glasses: their composition can be tailored to obtain softening temperatures of interest for fusion applications. The glassy joint can be easily ceramised to improve thermomechanical properties. The joining interfaces were investigated by SEM-EDS, XRD and mechanical tests. ((orig.))

  6. Formation of permeation barriers on ceramic SiC/SiC composites

    International Nuclear Information System (INIS)

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  7. On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, Grzegorz

    2012-04-24

    Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

  8. Geometric structure of thin SiO xN y films on Si(100)

    Science.gov (United States)

    Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

    1998-05-01

    Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.

  9. Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix

    International Nuclear Information System (INIS)

    Zlateva, G; Atanassov, A; Baleva, M; Nikolova, L; Abrashev, M V

    2007-01-01

    An orientational growth of the Mg 2 Si lattice relative to the Si lattice is considered assuming minimum mismatch of their lattice parameters. The Raman scattering cross-sections are calculated for the four possible orientations of the Mg 2 Si lattice positioned in this way. The integral intensity ratios for the F 2g mode of Mg 2 Si in different polarization configurations, obtained from the experimental spectra, are compared with the calculated ratios. It is found that the Mg 2 Si nanolayer's morphology is sensitive to the implantation energy, which determines both the peak Mg concentration in the initial implantation profile and its position in the sample depth. At a peak concentration of the order of the stoichiometric concentration, the layers are highly oriented. When the peak concentration is higher and the peak is placed closer to the surface, the layers are polycrystalline

  10. Sinalização visual em cidades

    OpenAIRE

    Nunes, Cristina Colombo

    2005-01-01

    Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia de Produção. Historicamente os espaços públicos nas cidades têm, entre outras, a função de promover o convívio. São os lugares onde as pessoas trocam informações, e, sobretudo, interagem entre si e com o meio físico. Porém, o espaço público não é um elemento neutro nesta relação, propicia algumas atividade, inibe outras. Desta forma, o espaço urbano deve ser proposit...

  11. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  12. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    International Nuclear Information System (INIS)

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  13. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Energy Technology Data Exchange (ETDEWEB)

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  14. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  15. Do estilo em ciência e em história das ciências

    Directory of Open Access Journals (Sweden)

    Michel Paty

    2012-08-01

    Full Text Available Ao considerar o conhecimento científico como uma forma de pensamento simbólico, entende-se com isso não simples sistemas de signos, mas conteúdos de pensamento (expressos por conceitos ligados entre si e que fazem sentido, que são, no espaço das representações mentais, os substitutos do "dado objetivo" que se supõe subjazer à experiência que fazemos do "mundo" pelos sentidos e, nesse nível indissociavelmente, pelo entendimento. Esse pensamento simbólico adquire densidade e consistência pela "tecelagem" realizada graças ao trabalho dos pensamentos individuais que se comunicam, social e culturalmente, inscritos no tempo da história. Da tensão dinâmica entre o sujeito do conhecimento, que busca a inteligibilidade (pela operação de sua razão, e a objetividade dos conteúdos que ele se propõe (inicialmente dados, depois modificados ou produzidos, resulta o movimento do pensamento científico e a transformação dos conhecimentos. Esse trabalho do pensamento simbólico é marcado por um estilo próprio a cada um, mas que em parte pode ser comum em contextos, escolas ou tradições. Em ciência e em história das ciências, o estilo intervém em dois níveis: o da abordagem "objetal" da produção das obras pelos cientistas e o da abordagem "reflexiva" da história epistemológica e da filosofia, que se interrogam sobre a significação tanto dos próprios conteúdos de conhecimento quanto do pensamento racional, simbólico, cuja função é manifestá-los.By considering scientific knowledge as a form of symbolic thought, we do not mean by the latter simply systems of signs, but thought contents (expressed by concepts related between them and providing meaning ; they are, in the space of mental representations, the substitutes of the «objectively given» that one supposes to underly the experience of the «world» done through the senses and the understanding, both being indissociable at this level. This symbolic thought gets

  16. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  17. Acessibilidade web em redes sociais

    OpenAIRE

    Loureiro, Janaína Rolan

    2014-01-01

    A acessibilidade tem sido uma preocupação em diversas áreas nos últimos anos e, em relação à Web, trata-se de um direito garantido por lei às pessoas com deficiência. Muitos estudos visando avaliar e melhorar a Acessibilidade Web foram realizados desde que este direito foi instituído, culminando com o surgimento de tecnologias assistivas, ferramentas de avaliação automatizadas e diretrizes para padronizar o desenvolvimento de sites acessíveis. Porém, alguns domínios ainda c...

  18. Efeito da enxertia em mandioca

    OpenAIRE

    Bomfim, Nayra Nascimento

    2011-01-01

    Enxertos de duas espécies silvestres (M. glaziovii e M. fortalezensis) sobre M. esculenta, mandioca, foram estudados morfologicamente, anatomicamente e citogeneticamente e a fim de se avaliar possíveis efeitos devido à interação entre enxerto e porta-enxerto. Foram feitas análises anatômicas das raízes dos porta-enxertos UnB 201 e UnB 122 (variedades de M. esculenta), em comparação com as variedades não enxertadas. Analisou-se a meiose em enxerto da espécie M. glaziovii que apresentava morfol...

  19. NAVIER-STOKES EM GPU

    OpenAIRE

    ALEX LAIER BORDIGNON

    2006-01-01

    Nesse trabalho, mostramos como simular um fluido em duas dimensões em um domínio com fronteiras arbitrárias. Nosso trabalho é baseado no esquema stable fluids desenvolvido por Joe Stam. A implementação é feita na GPU (Graphics Processing Unit), permitindo velocidade de interação com o fluido. Fazemos uso da linguagem Cg (C for Graphics), desenvolvida pela companhia NVidia. Nossas principais contribuições são o tratamento das múltiplas fronteiras, o...

  20. Factores de risco em implantologia

    OpenAIRE

    Sousa, Inês Silveira e Luz Nunes de

    2015-01-01

    A Implantologia tem ganho popularidade na medicina dentária pelos resultados previsíveis em reabilitações de áreas edêntulas, permitindo minimizar as consequências funcionais, fonéticas e estéticas que advém da perda de dentes através de uma solução fixa que satizfaz os pacientes. Esta é uma revisão da literatura existente sobre factores de risco, fracassos e complicações inerentes ao tratamento com implantes dentários. Categorizam-se os factores de risco em implantologia co...

  1. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  2. Preparação e caracterização de materiais compósitos SiC/caulim/Al via "squeeze-casting" Preparation and characterization of SiC/kaolin/Al composite materials by squeeze- casting

    Directory of Open Access Journals (Sweden)

    M. Freitas

    2009-09-01

    Full Text Available Na busca de materiais com propriedades diferenciadas, vem aumentando nos últimos anos as pesquisas em materiais compósitos. Um dos importantes métodos de fabricação destes compósitos é o processo de infiltração sob pressão de metal fundido denominado "squeeze-casting". Este processo oferece algumas vantagens, tais como facilidade de produzir o compósito, baixo custo e capacidade de formação de estruturas em rede. Neste trabalho foram produzidos e caracterizados compósitos SiC-Al, com concentrações em caulim variando entre 10 e 50% em substituição a fase majoritária SiC. As pré-formas cerâmicas foram produzidas controlando-se a fração granulométrica do SiC/caulim para uma melhor infiltração. Estas pré-formas, após sinterização a 1100 ºC/1 h, resultaram altamente porosas, sendo a porosidade aumentada com o aumento do caulim em substituição ao SiC. Análises de DRX mostraram a existência de partículas de quartzo além da fase SiC como constituintes das pré-formas. Durante o processo de infiltração e tratamento térmico, o alumínio no estado líquido reagiu preferencialmente com o quartzo e outros aluminossilicatos da pré-forma reduzindo-os, precipitando alumina e silício na microestrutura, a qual apresentou também alumínio em excesso que não reagiu no processo. A sílica e os silicatos da pré-forma, ao reagirem preferencialmente com o alumínio, evitaram a reação do Al com o SiC, prevenindo a formação da fase Al4C3,, a qual é altamente higroscópica e causa a degradação do compósito. Dependendo da composição, os compósitos SiC-caulim-Al desenvolvidos neste trabalho, podem ser usados em aplicações que envolvam elevada resistência mecânica à flexão (240 a 300 MPa, baixa densidade e dureza superficial entre 180 e 380 kgf/mm².In search of materials with different properties, has been increasing the research on composite materials in recent years. One of the important methods of

  3. Thermal Studies of Zn(II, Cd(II and Hg(II Complexes of Some <em>N-Alkyl-N>-Phenyl-Dithiocarbamates

    Directory of Open Access Journals (Sweden)

    Peter A. Ajibade

    2012-07-01

    Full Text Available The thermal decomposition of Zn(II, Cd(II and Hg(II complexes of <em>N-ethyl-N>-phenyl and <em>N-butyl-N>-phenyl dithiocarbamates have been studied using thermogravimetric analysis (TGA and differential scanning calorimetry (DSC. The products of the decomposition, at two different temperatures, were further characterized by scanning electron microscopy (SEM and energy-dispersive X-ray spectroscopy (EDX. The results show that while the zinc and cadmium complexes undergo decomposition to form metal sulphides, and further undergo oxidation forming metal oxides as final products, the mercury complexes gave unstable volatiles as the final product.

  4. Detecção molecular de Ehrlichia canis e Babesia canis vogeli em Rhipicephalus sanguineus sensu lato de carrapatos em Cuba

    Directory of Open Access Journals (Sweden)

    Maylin Gonzalez Navarrete

    2016-12-01

    Full Text Available Os carrapatos (Acari: Ixodidae são de importância médica e veterinária relevantes em todo o mundo por causa da variedade de agentes patogênicos que podem transmitir. No presente trabalho, foi realizada uma pesquisa para identificar Babesia spp. e Ehrlichia spp. em carrapatos coletados de cães de Cuba. Foram coletados 431 carrapatos de 378 cães, tendo sido identificados como pertencentes às espécies de Ripicephalus sanguineus sensu lato (s. 1. O DNA genômico foi extraído com protocolo usando fenol/clorofórmio. Os carrapatos foram organizados em “pools” e o DNA extraído foi testado pela reação em cadeia da polimerase (nPCR para amplificar 398 pares de bases (pb do DNA ribossômico 16S (rDNA de Ehrlichia canis e PCR para amplificar aproximadamente 560 pb do DNA ribossômico 18S (rDNA. Dos 49 pools testados, 8,16% (n = 4/49 foram positivos para o E. canis por nPCR visando o gene do 16S rDNA e apenas um pool (n = 1/49; 2,04% foi positivo para o gene 18S rDNA para Babesia canis. As quatro sequências obtidas para o fragmento de 16S rDNA foram idênticas entre si e resultaram em 100% de identidade com E. canis de diferentes países. A sequência obtida do gene do 18S rDNA para Babesia spp. apresentou semelhança de 100% com Babesia canis vogeli quando comparada às sequências depositadas no Genbank. Esta foi a primeira detecção molecular desses agentes no carrapato R. sanguineus s. l. em Cuba.

  5. Correction of SiPM temperature dependencies

    International Nuclear Information System (INIS)

    Kaplan, A.

    2009-01-01

    The performance of a high granular analogue hadronic calorimeter (AHCAL) using scintillator tiles with built-in Silicon Photomultiplier (SiPM) readout is reported. A muon beam is used for the minimum ionizing particle (MIP) based calibration of the single cells. The calibration chain including corrections for the non-linearity of the SiPM is presented. The voltage and temperature dependencies of the SiPM signal have been investigated using the versatile LED system of the AHCAL. Monitoring and correction methods are discussed. Measurements from the operation 2006 and 2007 at the CERN SPS test beam and data provided by the Institute for Theoretical and Experimental Physics (ITEP) in Moscow are compared.

  6. Fluorine incorporation during Si solid phase epitaxy

    International Nuclear Information System (INIS)

    Impellizzeri, G.; Mirabella, S.; Romano, L.; Napolitani, E.; Carnera, A.; Grimaldi, M.G.; Priolo, F.

    2006-01-01

    We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.07-5 x 10 14 F/cm 2 ). Subsequently, the samples were regrown by SPE at different temperatures: 580, 700 and 800 deg. C. We have found that the amount of F incorporated after SPE strongly depends on the SPE temperature and on the energy and fluence of the implanted-F, opening the possibility to tailor the F profile during SPE

  7. Uso dello spazio da parte dello scoiattolo comune (<em>Sciurus vulgarisem> in bosco di conifere

    Directory of Open Access Journals (Sweden)

    M. Adamo

    2003-10-01

    Full Text Available Nell?ambito di un progetto di ricerca sull?ecologia dello scoiattolo comune in boschi di conifere delle Alpi, abbiamo avviato uno studio con la radiotelemetria per indagare i fattori che influiscono sull?uso dello spazio da parte degli animali. I risultati riportati nel presente lavoro si riferiscono a due anni successivi caratterizzati da una diversa disponibilità alimentare. L?area di studio si trovava nel Parco Nazionale del Gran Paradiso, in Val di Rhemes, all?interno di una pecceta subalpina (<em>Picea abiesem> 85%, <em>Larix deciduaem> 11%, alberi morti 4%. La produzione energetica del bosco (semi delle conifere è stata valutata moltiplicando il n. di piante per ettaro x il n. medio di coni prodotti (contati su 60 alberi campione x il n. medio di semi per cono x il peso medio dei semi, trasformando poi la biomassa in Mj. Le catture sono state effettuate tre volte l?anno nel 2001 e 2002 con 30 trappole incruente Tomahawk tipo 201. Diciotto scoiattoli nel 2001 e 13 nel 2002 sono stati dotati di radiocollare (PD-2C Holohil Systems Ltd. e seguiti in estate e autunno. Sono stati calcolati i seguenti parametri: home range MCP 100%, MCP 95% (animali con singole escursioni, 100% Cluster-based (animali che usavano differenti aree di attività; stime delle core-area mono e multinucleari effettuate con la tecnica della Cluster Analysis 85%; sovrapposizione delle core-area. Nel 2001, all?inizio dell?estate, 4 maschi su 8 e 7 femmine su 8 sono emigrati nella valle adiacente o a quote più basse. Nel 2002, tutti gli individui sono rimasti residenti. La dimensione media degli home range stagionali nel 2001 è stata di 83,30 ± 48,72 ha (n = 30 contro 31,04 ± 16,65 ha (n = 19 nel 2002, la media delle core-area è stata 18,18 ± 17,74 ha nel 2001 e 9,36 ± 5,40 ha in 2002 (Kruskal-Wallis ANOVA: home range H = 22,6; g.l. = 1, P < 0,0001; core-area H = 4,55, g.l. = 1, P = 0,033. La sovrapposizione delle core-area maschio/femmina e femmina/maschio

  8. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

    Directory of Open Access Journals (Sweden)

    Goloudina S.I.

    2017-01-01

    Full Text Available High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR spectroscopy, X-ray diffraction (XRD, Raman spectroscopy, transmission electon microscopy (TEM, transmission electron diffraction (TED, and scanning electron microscopy (SEM. XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111 substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111 film are aligned with four Si(111 planes at the SiC/Si interface. It was shown the SiC films (35 nm grown on Si(111 at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm were formed on Si (100 substrate at the same temperature. It was shown the SiC films (30-35 nm are able to cover the voids in Si substrate with size up to 10 μm.

  9. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  10. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  11. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process...

  12. SiC Seeded Crystal Growth

    Science.gov (United States)

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  13. MONITORAMENTO ELETRÔNICO DAS RESPOSTAS COMPORTAMENTAIS DE VACAS EM LACTAÇÃO ALOJADAS EM FREESTALL CLIMATIZADO

    Directory of Open Access Journals (Sweden)

    Soraia V. Matarazzo

    2007-11-01

    Full Text Available O trabalho teve como objetivo empregar o monitoramento eletrônico para avaliar as respostas comportamentais de vacas em lactação alojadas em freestall climatizado. Quatro vídeo-câmeras foram instaladas em cada tratamento, nos locais estratégicos do freestall, de modo a capturar, em tempo real o deslocamento dos animais. O experimento teve duração de 28 dias consecutivos do mês de novembro de 2003, no qual as imagens foram gravadas durante sete dias, no intervalo das 9 às 17 horas. Foram utilizadas 15 vacas em lactação, multíparas, com produção média de 20 kg de leite dia-1. Os tratamentos adotados foram: ausência de ventilação (V0, ventilação (V e ventilação + nebulização (VN posicionados na área de descanso dos animais. Os dados referentes à temperatura do bulbo seco (TBS e umidade relativa do ar (UR foram mensurados a cada 15 minutos ao longo das 24 horas no interior da instalação e no ambiente externo. A UR mostrou-se mais elevada nos tratamentos V0 (61,8% e VN (61,8% quando comparada ao tratamento V(60,3%. O THI mostrou-se mais elevado em V (75,0, quando comparado ao tratamento V0 (74,5 e VN (74,3. Os animais submetidos ao tratamento V (108,3 min passaram mais tempo na área de alimentação quando comparados com V0 (60,7 min e VN (72,5 min. Os animais do tratamento V (19,3 min permaneceram um período maior na área do bebedouro em relação a V0 (8,3 min e VN (12,7 min que não diferiram entre si. Foram observadas diferenças na preferência pelo lado da instalação. A área de descanso apresentava camas adjacentes à área de alimentação e adjacentes ao bebedouro. As vacas dos tratamentos V0 (189,0 min e V (167,3 min permaneceram maior tempo nas camas adjacentes à área de alimentação. Por outro lado, as vacas do tratamento VN (164,0 min passaram mais tempo nas camas adjacentes a área do bebedouro em relação aos animais do tratamento V (26,7 min. Foi constatado maior tempo em pé no

  14. Produção de sentidos entre adolescentes sobre o cuidado de si na gravidez

    Directory of Open Access Journals (Sweden)

    Nayara Bueno de Araujo

    2016-06-01

    Full Text Available No pré-natal, profissionais comumente desconsideram a rede de produção de sentidos de adolescentes sobre o cuidado de si na gravidez. Busca-se evidenciá-la em uma situação concreta, com foco nas fontes e comunidades de referência para adolescentes de áreas pobres de Cuiabá-MT, Brasil, sintetizadas em um mapa. Trata-se de estudo qualitativo, realizado entre 2014-2015, com 12 adolescentes grávidas, por meio de: grupo focal, entrevista individual, consulta a prontuários e análise baseada em preceitos e categorias da Análise de Discurso Crítica. A principal comunidade discursiva de referência das adolescentes é a família, embora profissionais de saúde, mídia e conhecidos também intermedeiem a construção de seus discursos. A cultura biomédica e o cuidado, como controle de riscos via comportamentos, são, respectivamente, as fontes e as vozes mais relevantes dentre outras concorrentes. Entender essas peculiaridades propicia ao profissional buscar melhores formas de relacionar-se com adolescentes e ampliar sua autonomia.

  15. Escultura em madeira em Laranjeiras/SE: Perspectivas do patrimônio material e imaterial no século XXI

    Directory of Open Access Journals (Sweden)

    Janaina Cardoso de Mello

    2015-10-01

    Full Text Available O trabalho traça o panorama conceitual e prático do “patrimônio material” e “patrimônio imaterial”, em suas intercessões, no contexto da cidade de Laranjeiras em Sergipe. A metodologia utiliza a entrevista gravada, semi-estruturada, com Demar (Ademar, escultor em madeira, cuja produção cria, expõe e comercializa no Centro de Artesanato, agraciado com o título de “patrimônio vivo” pela Prefeitura. Com a alta tecnologia, a Arqueologia Pública deve ir às comunidades, ouvir suas demandas para compartilhar de informações, registro e conservação do patrimônio cultural que congrega em si características de seu modus vivendi, valorizando a diversidade e a sobrevivência da arte. Como referência os trabalhos de Sandra Pelegrini, Pedro Paulo Funari, UNESCO, IPHAN e Ana Carla Reis.

  16. Si(Li) X-ray detector

    International Nuclear Information System (INIS)

    Yuan Xianglin; Li Zhiyong; Hong Xiuse

    1990-08-01

    The fabrication technology of the 10∼80 mm 2 Si(Li) X-ray detectors are described and some problems concerning technology and measurement are discussed. The specifications of the detectors are shown as well. The Si(Li) X-ray detector is a kind of low energy X-ray detectors. Owing to very high energy resolution, fine linearity and high detection efficiency in the range of low energy X-rays, it is widely used in the fields of nuclear physics, medicine, geology and environmental protection, etc,. It is also a kernel component for the scanning electron microscope and X-ray fluorescence analysis systems

  17. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    DEFF Research Database (Denmark)

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the......, and synthetic kaliophilite, KAISiO4, respectively, and it is proposed that β- and λ-KFeSiO4 are linked by Si-Fe order-disorder. Beta KFeSiO4 transforms slowly into α-KFeSi04 above 910°C but the transformation was not shown to be reversible in the present dry-heating experiments....

  18. Ag on Si(111) from basic science to application

    Energy Technology Data Exchange (ETDEWEB)

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  19. Recent progress in Si thin film technology for solar cells

    Science.gov (United States)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  20. FDTD simulation study of size/gap and substrate-dependent SERS activity study of Au@SiO2 nanoparticles

    International Nuclear Information System (INIS)

    Yang Jing-Liang; Li Ruo-Ping; Han Jun-He; Huang Ming-Ju

    2016-01-01

    We use Au@SiO 2 nanoparticles (NPs) to systematically and comprehensively study the relationship between nanostructure and activity for surface-enhanced Raman scattering. Calculation simulation using the finite different time domain method verifies the experiment results and further reveals that the particle size and the distance between the NPs play vital roles in the surface-enhanced Raman scattering (SERS). Furthermore, in order to better simulate the real experiment, a Au@SiO 2 nanosphere dimer is placed on the silicon substrate and Au substrate, separately. The simulation results show that the large EM field coupling is due to the “hot spots” transferred from the NP–NP gaps to NP–surface of metal gaps, meanwhile, more “hot spots” occur. We also find that the signal intensity strongly depends on the position of the probe molecule. This work provides a better understanding of EM field enhancement. (paper)